Produkte > VISHAY > Alle Produkte des Herstellers VISHAY (361544) > Seite 6008 nach 6026

Wählen Sie Seite:   [  << Vorherige Seite ]  1 602 1204 1806 2408 3010 3612 4214 4816 5418 6003 6004 6005 6006 6007 6008 6009 6010 6011 6012 6013 6020 6026  [ Nächste Seite >> ]
Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
SIHG22N60E-GE3 VISHAY sihg22n60e.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13A; Idm: 56A; 227W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Pulsed drain current: 56A
Power dissipation: 227W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.18Ω
Mounting: THT
Gate charge: 86nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SIHG22N60EF-GE3 VISHAY tf-sihg22n60ef-ge3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12A; Idm: 46A; 179W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12A
Pulsed drain current: 46A
Power dissipation: 179W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 182mΩ
Mounting: THT
Gate charge: 96nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SiHP22N60AE-GE3 VISHAY sihp22n60ae.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12A; Idm: 49A; 179W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12A
Pulsed drain current: 49A
Power dissipation: 179W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.18Ω
Mounting: THT
Gate charge: 96nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SIHP22N60E-GE3 VISHAY sihp22n60e.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13A; Idm: 56A; 227W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Pulsed drain current: 56A
Power dissipation: 227W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.18Ω
Mounting: THT
Gate charge: 86nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SIHP22N60EF-GE3 VISHAY sihp22n60ef.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12A; Idm: 46A; 179W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12A
Pulsed drain current: 46A
Power dissipation: 179W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 182mΩ
Mounting: THT
Gate charge: 96nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SIHP21N60EF-GE3 VISHAY sihp21n60ef.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 14A; Idm: 53A; 227W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 14A
Power dissipation: 227W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 176mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 84nC
Pulsed drain current: 53A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SIHH21N60E-T1-GE3 VISHAY sihh21n60e.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12A; Idm: 48A; 104W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12A
Pulsed drain current: 48A
Power dissipation: 104W
Case: PowerPAK® 8x8L
Gate-source voltage: ±30V
On-state resistance: 176mΩ
Mounting: SMD
Gate charge: 83nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
D2TO020CR0320FRE3 VISHAY pVersion=0046&contRep=ZT&docId=005056AB281E1EDFA091714DE2DE80D6&compId=d2to20.pdf?ci_sign=ae3bb0b8db71bf0fe12ac9c059f901e28ddf0efc Category: Power resistors
Description: Resistor: thick film; SMD; TO263; 32mΩ; 25W; ±1%; -55÷155°C; 500pcs.
Type of resistor: thick film
Mounting: SMD
Case: TO263
Resistance: 32mΩ
Power: 25W
Tolerance: ±1%
Max. operating voltage: 500V
Operating temperature: -55...155°C
Conform to the norm: AEC-Q200
Quantity in set/package: 500pcs.
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
D2TO020CR0320FTE3 VISHAY pVersion=0046&contRep=ZT&docId=005056AB281E1EDFA091714DE2DE80D6&compId=d2to20.pdf?ci_sign=ae3bb0b8db71bf0fe12ac9c059f901e28ddf0efc Category: Power resistors
Description: Resistor: thick film; SMD; TO263; 32mΩ; 25W; ±1%; -55÷155°C; 50pcs.
Type of resistor: thick film
Mounting: SMD
Case: TO263
Resistance: 32mΩ
Power: 25W
Tolerance: ±1%
Max. operating voltage: 500V
Operating temperature: -55...155°C
Conform to the norm: AEC-Q200
Quantity in set/package: 50pcs.
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
ES2G-E3/5BT VISHAY es2f.pdf Category: SMD universal diodes
Description: Diode: rectifying
Type of diode: rectifying
auf Bestellung 12800 Stücke:
Lieferzeit 14-21 Tag (e)
3200+0.12 EUR
Mindestbestellmenge: 3200
Im Einkaufswagen  Stück im Wert von  UAH
RCA12101R00FKEA RCA12101R00FKEA VISHAY pVersion=0046&contRep=ZT&docId=005056AB281E1EDF9FFA33905C0880D6&compId=rcae3.pdf?ci_sign=32afd2001bdcb5c2af72d5356a7a876ec5686752 Category: SMD resistors
Description: Resistor: thick film; 1210; 1Ω; 500mW; ±1%; -55÷155°C; 100ppm/°C
Type of resistor: thick film
Case - inch: 1210
Case - mm: 3225
Resistance: 1Ω
Power: 0.5W
Tolerance: ±1%
Max. operating voltage: 200V
Operating temperature: -55...155°C
Temperature coefficient: 100ppm/°C
Conform to the norm: AEC-Q200
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SI3459BDV-T1-GE3 SI3459BDV-T1-GE3 VISHAY si3459bd.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -60V; -2.9A; Idm: -8A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -2.9A
Pulsed drain current: -8A
Power dissipation: 3.3W
Case: TSOP6
Gate-source voltage: ±20V
On-state resistance: 288mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 504 Stücke:
Lieferzeit 14-21 Tag (e)
67+1.07 EUR
81+0.88 EUR
104+0.69 EUR
228+0.31 EUR
241+0.3 EUR
Mindestbestellmenge: 67
Im Einkaufswagen  Stück im Wert von  UAH
SI3473CDV-T1-GE3 SI3473CDV-T1-GE3 VISHAY si3473cd.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -12V; -8A; Idm: -20A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -8A
Pulsed drain current: -20A
Power dissipation: 4.2W
Case: TSOP6
Gate-source voltage: ±8V
On-state resistance: 36mΩ
Mounting: SMD
Gate charge: 65nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2940 Stücke:
Lieferzeit 14-21 Tag (e)
66+1.09 EUR
86+0.84 EUR
210+0.34 EUR
222+0.32 EUR
Mindestbestellmenge: 66
Im Einkaufswagen  Stück im Wert von  UAH
SI3458BDV-T1-GE3 SI3458BDV-T1-GE3 VISHAY Si3458BDV.PDF Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 4.1A; Idm: 10A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 4.1A
Pulsed drain current: 10A
Power dissipation: 3.3W
Case: TSOP6
Gate-source voltage: ±20V
On-state resistance: 128mΩ
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1459 Stücke:
Lieferzeit 14-21 Tag (e)
66+1.09 EUR
85+0.84 EUR
169+0.42 EUR
178+0.4 EUR
Mindestbestellmenge: 66
Im Einkaufswagen  Stück im Wert von  UAH
SI3417DV-T1-GE3 SI3417DV-T1-GE3 VISHAY si3417dv.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -8A; Idm: -50A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -8A
Pulsed drain current: -50A
Power dissipation: 2.7W
Case: TSOP6
Gate-source voltage: ±20V
On-state resistance: 25.2mΩ
Mounting: SMD
Gate charge: 50nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SI3433CDV-T1-GE3 SI3433CDV-T1-GE3 VISHAY si3433cdv.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -6A; Idm: -20A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -6A
Pulsed drain current: -20A
Power dissipation: 3.3W
Case: TSOP6
Gate-source voltage: ±8V
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 45nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SI3437DV-T1-GE3 VISHAY si3437dv.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -150V; -1.4A; Idm: -5A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -1.4A
Pulsed drain current: -5A
Power dissipation: 3.2W
Case: TSOP6
Gate-source voltage: ±20V
On-state resistance: 790mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SI3407DV-T1-BE3 VISHAY si3407dv.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -8A; Idm: -25A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -8A
Pulsed drain current: -25A
Power dissipation: 4.2W
Case: TSOP6
Gate-source voltage: ±12V
On-state resistance: 32.7mΩ
Mounting: SMD
Gate charge: 63nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
Si3410DV-T1-GE3 VISHAY si3410dv.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 8A; Idm: 30A; 4.1W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 8A
Pulsed drain current: 30A
Power dissipation: 4.1W
Case: TSOP6
Gate-source voltage: ±20V
On-state resistance: 23mΩ
Mounting: SMD
Gate charge: 33nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SI3424CDV-T1-BE3 VISHAY si3424cdv.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 8A; Idm: 20A; 3.6W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 8A
Pulsed drain current: 20A
Power dissipation: 3.6W
Case: TSOP6
Gate-source voltage: ±20V
On-state resistance: 32mΩ
Mounting: SMD
Gate charge: 12.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SI3424CDV-T1-GE3 SI3424CDV-T1-GE3 VISHAY si3424cdv.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 8A; Idm: 20A; 3.6W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 8A
Pulsed drain current: 20A
Power dissipation: 3.6W
Case: TSOP6
Gate-source voltage: ±20V
On-state resistance: 32mΩ
Mounting: SMD
Gate charge: 12.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SI3429EDV-T1-GE3 VISHAY pVersion=0046&contRep=ZT&docId=005056AB90B41EDABB85BFC1EE8AC0C7&compId=si3429edv.pdf?ci_sign=b8d57614daeb5242d42ba3348e5f19e731ff9f22 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -8A; Idm: -40A; 2.7W; TSOP6
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -8A
Pulsed drain current: -40A
Power dissipation: 2.7W
Case: TSOP6
Gate-source voltage: ±8V
On-state resistance: 38mΩ
Mounting: SMD
Gate charge: 43.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SI3430DV-T1-E3 VISHAY si3430dv.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 2.4A; Idm: 8A; 2W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 2.4A
Pulsed drain current: 8A
Power dissipation: 2W
Case: TSOP6
Gate-source voltage: ±20V
On-state resistance: 0.185Ω
Mounting: SMD
Gate charge: 8.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
Si3430DV-T1-GE3 VISHAY si3430dv.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 2.4A; Idm: 8A; 2W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 2.4A
Pulsed drain current: 8A
Power dissipation: 2W
Case: TSOP6
Gate-source voltage: ±20V
On-state resistance: 0.185Ω
Mounting: SMD
Gate charge: 8.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SI3433CDV-T1-E3 VISHAY si3433cdv.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -6A; Idm: -20A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -6A
Pulsed drain current: -20A
Power dissipation: 3.3W
Case: TSOP6
Gate-source voltage: ±8V
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 45nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SI3437DV-T1-E3 VISHAY si3437dv.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -150V; -1.4A; Idm: -5A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -1.4A
Pulsed drain current: -5A
Power dissipation: 3.2W
Case: TSOP6
Gate-source voltage: ±20V
On-state resistance: 790mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SI3438DV-T1-E3 VISHAY si3438dv.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 7.4A; Idm: 20A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 7.4A
Pulsed drain current: 20A
Power dissipation: 3.5W
Case: TSOP6
Gate-source voltage: ±20V
On-state resistance: 42.5mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SI3438DV-T1-GE3 VISHAY si3438dv.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 7.4A; Idm: 20A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 7.4A
Pulsed drain current: 20A
Power dissipation: 3.5W
Case: TSOP6
Gate-source voltage: ±20V
On-state resistance: 42.5mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SI3440ADV-T1-GE3 VISHAY si3440adv.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 150V; 2.2A; Idm: 4A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 2.2A
Pulsed drain current: 4A
Power dissipation: 3.6W
Case: TSOP6
Gate-source voltage: ±20V
On-state resistance: 432mΩ
Mounting: SMD
Gate charge: 4nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SI3440DV-T1-E3 VISHAY si3440dv.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 150V; 1.2A; Idm: 6A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 1.2A
Pulsed drain current: 6A
Power dissipation: 1.14W
Case: TSOP6
Gate-source voltage: ±20V
On-state resistance: 0.4Ω
Mounting: SMD
Gate charge: 8nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SI3440DV-T1-GE3 SI3440DV-T1-GE3 VISHAY si3440dv.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 150V; 1.2A; Idm: 6A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 1.2A
Pulsed drain current: 6A
Power dissipation: 1.14W
Case: TSOP6
Gate-source voltage: ±20V
On-state resistance: 0.4Ω
Mounting: SMD
Gate charge: 8nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SI3442BDV-T1-E3 VISHAY si3442bd.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 4.2A; Idm: 20A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 4.2A
Pulsed drain current: 20A
Power dissipation: 1.67W
Case: TSOP6
Gate-source voltage: ±12V
On-state resistance: 90mΩ
Mounting: SMD
Gate charge: 5nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SI3442BDV-T1-GE3 VISHAY si3442bd.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 4.2A; Idm: 20A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 4.2A
Pulsed drain current: 20A
Power dissipation: 1.67W
Case: TSOP6
Gate-source voltage: ±12V
On-state resistance: 90mΩ
Mounting: SMD
Gate charge: 5nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SI3453DV-T1-GE3 VISHAY si3453dv.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -3.4A; Idm: -6A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.4A
Pulsed drain current: -6A
Power dissipation: 3W
Case: TSOP6
Gate-source voltage: ±20V
On-state resistance: 276mΩ
Mounting: SMD
Gate charge: 6.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SI3456DDV-T1-E3 VISHAY si3456ddv.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 6.3A; Idm: 20A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 6.3A
Pulsed drain current: 20A
Power dissipation: 2.7W
Case: TSOP6
Gate-source voltage: ±20V
On-state resistance: 50mΩ
Mounting: SMD
Gate charge: 9nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MBB0207VD1004BC100 MBB0207VD1004BC100 VISHAY pVersion=0046&contRep=ZT&docId=005056AB752F1ED5ADBC751C8F1A51BF&compId=VISHAY_mbxsma.pdf?ci_sign=7674755c49503b25440d14cb7d501c82d9f4f1dd Category: THT Resistors
Description: Resistor: metal film; THT; 1MΩ; 0.6W; ±0.1%; Ø0.6x28mm; Ø2.5x6.3mm
Operating temperature: -55...155°C
Resistance: 1MΩ
Tolerance: ±0.1%
Body dimensions: Ø2.5x6.3mm
Leads dimensions: Ø0.6x28mm
Temperature coefficient: 25ppm/°C
Max. operating voltage: 350V
Leads: axial
Mounting: THT
Type of resistor: metal film
Power: 0.6W
auf Bestellung 1986 Stücke:
Lieferzeit 14-21 Tag (e)
66+1.09 EUR
103+0.7 EUR
109+0.66 EUR
500+0.64 EUR
1000+0.63 EUR
Mindestbestellmenge: 66
Im Einkaufswagen  Stück im Wert von  UAH
VJ0201A330JXACW1BC VISHAY pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A3CA0A4115D58749&compId=vjw1bcbascomseries.pdf?ci_sign=5129a4891ac23440100ea18c8f8081641574be6a Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 33pF; 50V; C0G (NP0); ±5%; SMD; 0201
Type of capacitor: ceramic
Capacitance: 33pF
Operating voltage: 50V
Dielectric: C0G (NP0)
Tolerance: ±5%
Mounting: SMD
Case - inch: 0201
Case - mm: 0603
Operating temperature: -55...125°C
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RCA08054R75FKEA RCA08054R75FKEA VISHAY pVersion=0046&contRep=ZT&docId=005056AB281E1EDF9FFA33905C0880D6&compId=rcae3.pdf?ci_sign=32afd2001bdcb5c2af72d5356a7a876ec5686752 Category: SMD resistors
Description: Resistor: thick film; 0805; 4.75Ω; 125mW; ±1%; -55÷155°C; 100ppm/°C
Type of resistor: thick film
Case - inch: 0805
Case - mm: 2012
Resistance: 4.75Ω
Power: 0.125W
Tolerance: ±1%
Max. operating voltage: 150V
Operating temperature: -55...155°C
Temperature coefficient: 100ppm/°C
Conform to the norm: AEC-Q200
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SMCJ24A-E3/9AT VISHAY smcj.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS
Type of diode: TVS
auf Bestellung 14000 Stücke:
Lieferzeit 14-21 Tag (e)
3500+0.2 EUR
Mindestbestellmenge: 3500
Im Einkaufswagen  Stück im Wert von  UAH
SMCJ24AHE3_A/H VISHAY smcj.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS
Type of diode: TVS
auf Bestellung 13600 Stücke:
Lieferzeit 14-21 Tag (e)
850+0.43 EUR
Mindestbestellmenge: 850
Im Einkaufswagen  Stück im Wert von  UAH
SA7.5CA-E3/54 SA7.5CA-E3/54 VISHAY pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDAFB2FCD792F700D4&compId=sa5a_ser.pdf?ci_sign=48726553eaaf43795ac6d6e1187381a5648fca7f Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 8.33÷9.21V; 38.8A; bidirectional; DO15; 500W
Type of diode: TVS
Mounting: THT
Kind of package: 13 inch reel
Case: DO15
Semiconductor structure: bidirectional
Leakage current: 0.1mA
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Peak pulse power dissipation: 0.5kW
Max. off-state voltage: 7.5V
Max. forward impulse current: 38.8A
Breakdown voltage: 8.33...9.21V
auf Bestellung 3971 Stücke:
Lieferzeit 14-21 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
M64W202KB40 M64W202KB40 VISHAY pVersion=0046&contRep=ZT&docId=005056AB752F1ED48EB682352A2D61EC&compId=64.pdf?ci_sign=8693dbd4cca779c0fbd034cab01c9dc794367d1f Category: 3/8 inch multiturn THT trimmers
Description: Potentiometer: mounting; vertical,multiturn; 2kΩ; 500mW; THT; ±10%
Type of potentiometer: mounting
Kind of potentiometer: multiturn; vertical
Resistance: 2kΩ
Power: 0.5W
Mounting: THT
Tolerance: ±10%
Characteristics: linear
Track material: cermet
Operating temperature: -55...155°C
Potentiometer standard - inch: 3/8"
Temperature coefficient: 100ppm/°C
Terminal pitch: 2.54mm
Number of mechanical turns: 23 ±5
IP rating: IP67
Torque: 1,5Ncm
Control: vertical
Leads: W
auf Bestellung 322 Stücke:
Lieferzeit 14-21 Tag (e)
19+3.93 EUR
35+2.04 EUR
38+1.93 EUR
Mindestbestellmenge: 19
Im Einkaufswagen  Stück im Wert von  UAH
M64Y202KB40 M64Y202KB40 VISHAY pVersion=0046&contRep=ZT&docId=005056AB752F1ED48EB682352A2D61EC&compId=64.pdf?ci_sign=8693dbd4cca779c0fbd034cab01c9dc794367d1f Category: 3/8 inch multiturn THT trimmers
Description: Potentiometer: mounting; vertical,multiturn; 2kΩ; 500mW; THT; ±10%
Type of potentiometer: mounting
Kind of potentiometer: multiturn; vertical
Resistance: 2kΩ
Power: 0.5W
Mounting: THT
Tolerance: ±10%
Characteristics: linear
Track material: cermet
Operating temperature: -55...155°C
Potentiometer standard - inch: 3/8"
Temperature coefficient: 100ppm/°C
Terminal pitch: 2.54x2.54mm
Number of mechanical turns: 23 ±5
IP rating: IP67
Torque: 1,5Ncm
Control: vertical
Leads: Y
auf Bestellung 753 Stücke:
Lieferzeit 14-21 Tag (e)
19+3.86 EUR
38+1.93 EUR
40+1.83 EUR
Mindestbestellmenge: 19
Im Einkaufswagen  Stück im Wert von  UAH
T73YP202KT20 T73YP202KT20 VISHAY pVersion=0046&contRep=ZT&docId=E1C05A131B997FF1A6F5005056AB5A8F&compId=t73.pdf?ci_sign=7423a7eb6e2231f89b3025b0b3f40cdc51de587b Category: Single turn THT trimmers
Description: Potentiometer: mounting; single turn,horizontal; 2kΩ; 500mW; ±10%
Type of potentiometer: mounting
Kind of potentiometer: horizontal; single turn
Resistance: 2kΩ
Power: 0.5W
Mounting: THT
Tolerance: ±10%
Characteristics: linear
Manufacturer series: T73RYP
Track material: cermet
Operating temperature: -55...125°C
Potentiometer standard - inch: 1/4"
Temperature coefficient: 100ppm/°C
Terminal pitch: 2.54x2.54mm
Max. operating voltage: 250V
IP rating: IP67
Torque: 2Ncm
Electrical rotation angle: 250 ±15°
Potentiometer features: clear scale reading
Mechanical rotation angle: 290 ±5°
auf Bestellung 234 Stücke:
Lieferzeit 14-21 Tag (e)
39+1.84 EUR
42+1.72 EUR
77+0.93 EUR
82+0.87 EUR
Mindestbestellmenge: 39
Im Einkaufswagen  Stück im Wert von  UAH
M64P202KB40 M64P202KB40 VISHAY pVersion=0046&contRep=ZT&docId=E1C042E07EAC50F1A6F5005056AB5A8F&compId=64P.pdf?ci_sign=2d6048c3ad9220b4d16066cef1de520424b87840 Category: 3/8 inch multiturn THT trimmers
Description: Potentiometer: mounting; horizontal,multiturn; 2kΩ; 500mW; THT
Type of potentiometer: mounting
Kind of potentiometer: horizontal; multiturn
Resistance: 2kΩ
Power: 0.5W
Mounting: THT
Tolerance: ±10%
Characteristics: linear
Track material: cermet
Operating temperature: -55...155°C
Potentiometer standard - inch: 3/8"
Temperature coefficient: 100ppm/°C
Terminal pitch: 2.54x2.54mm
Number of mechanical turns: 23 ±5
IP rating: IP67
Torque: 1,5Ncm
Control: horizontal
Leads: P
auf Bestellung 250 Stücke:
Lieferzeit 14-21 Tag (e)
16+4.69 EUR
28+2.56 EUR
30+2.42 EUR
Mindestbestellmenge: 16
Im Einkaufswagen  Stück im Wert von  UAH
BZT52C75-E3-08 VISHAY pVersion=0046&contRep=ZT&docId=005056AB281E1EDEB79046061487C0D6&compId=bzt52_ser.pdf?ci_sign=7a70b048037601d1a47eeb5cd44c2aa040f4c6ce Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 75V; SMD; 7 inch reel; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 75V
Mounting: SMD
Tolerance: ±5%
Kind of package: 7 inch reel
Case: SOD123
Semiconductor structure: single diode
Leakage current: 0.1µA
Manufacturer series: BZT52C
Quantity in set/package: 3000pcs.
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BZT52C75-E3-18 VISHAY pVersion=0046&contRep=ZT&docId=005056AB281E1EDEB79046061487C0D6&compId=bzt52_ser.pdf?ci_sign=7a70b048037601d1a47eeb5cd44c2aa040f4c6ce Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 75V; SMD; 13 inch reel; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 75V
Mounting: SMD
Tolerance: ±5%
Kind of package: 13 inch reel
Case: SOD123
Semiconductor structure: single diode
Leakage current: 0.1µA
Manufacturer series: BZT52C
Quantity in set/package: 10000pcs.
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BZT52C75-G3-08 VISHAY pVersion=0046&contRep=ZT&docId=005056AB281E1EDEB79059396165A0D6&compId=bzt52-g_ser.pdf?ci_sign=e74d5114b81f65de34d284234e478f9a7a61d03d Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 75V; SMD; 7 inch reel; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 75V
Mounting: SMD
Tolerance: ±5%
Kind of package: 7 inch reel
Case: SOD123
Semiconductor structure: single diode
Leakage current: 0.1µA
Manufacturer series: BZT52-G
Quantity in set/package: 3000pcs.
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BZT52C75-G3-18 VISHAY pVersion=0046&contRep=ZT&docId=005056AB281E1EDEB79059396165A0D6&compId=bzt52-g_ser.pdf?ci_sign=e74d5114b81f65de34d284234e478f9a7a61d03d Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 75V; SMD; 13 inch reel; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 75V
Mounting: SMD
Tolerance: ±5%
Kind of package: 13 inch reel
Case: SOD123
Semiconductor structure: single diode
Leakage current: 0.1µA
Manufacturer series: BZT52-G
Quantity in set/package: 10000pcs.
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TSSP4056 VISHAY pVersion=0046&contRep=ZT&docId=005056AB281E1EDCAEAF62627735C0D2&compId=TSSP4056.pdf?ci_sign=211a4d4cb929fa6e70cacd6d4948053f42d7a141 Category: IR receiver modules
Description: Integrated IR receiver; 56kHz; 2.5÷5.5V; 45°
Type of photoelement: integrated IR receiver
Frequency: 56kHz
Mounting: THT
Supply voltage: 2.5...5.5V
Viewing angle: 45°
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GRC00BA3301JTNL GRC00BA3301JTNL VISHAY pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB5D58F0C6CC840D2&compId=GRC.pdf?ci_sign=92d3c6a8fa5a96a5ca5511c797a4e4aa77bdafd1 Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 33uF; 63VDC; ±20%; 2000h; -40÷105°C
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 33µF
Operating voltage: 63V DC
Tolerance: ±20%
Operating temperature: -40...105°C
Service life: 2000h
Dimensions: 6.3x11mm
auf Bestellung 1750 Stücke:
Lieferzeit 14-21 Tag (e)
590+0.12 EUR
890+0.081 EUR
1120+0.064 EUR
1750+0.041 EUR
Mindestbestellmenge: 590
Im Einkaufswagen  Stück im Wert von  UAH
GRC00BA3301JTFL GRC00BA3301JTFL VISHAY pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB5D58F0C6CC840D2&compId=GRC.pdf?ci_sign=92d3c6a8fa5a96a5ca5511c797a4e4aa77bdafd1 Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 33uF; 63VDC; ±20%; 2000h; -40÷105°C
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 33µF
Operating voltage: 63V DC
Tolerance: ±20%
Operating temperature: -40...105°C
Service life: 2000h
Dimensions: 6.3x11mm
Manufacturer series: GRC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GSC00AF3301JTFL VISHAY pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB5D59CBCE69FA0D2&compId=GSC.pdf?ci_sign=d7e452a815def9627909872e63e3259a2f2c8e7d Category: SMD electrolytic capacitors
Description: Capacitor: electrolytic; SMD; 33uF; 63VDC; ±20%; -55÷105°C; GSC
Type of capacitor: electrolytic
Mounting: SMD
Capacitance: 33µF
Operating voltage: 63V DC
Tolerance: ±20%
Operating temperature: -55...105°C
Height: 10mm
Nominal life: 2000h
Dimensions: 8x10mm
Manufacturer series: GSC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RTOP100V3301JB VISHAY pVersion=0046&contRep=ZT&docId=005056AB281E1EDF9FF92797025840D6&compId=rtop.pdf?ci_sign=caff3dcc2dac20229d14267bdbd72f5bab85d4ca Category: Power resistors
Description: Resistor: thick film; screw; SOT227B; 3.3kΩ; 100W; ±5%; -55÷125°C
Mounting: screw
Tolerance: ±5%
Operating temperature: -55...125°C
Resistor features: needs additional heatsink
Recommended heatsink: thermal resistance 0,5 K/W
Type of resistor: thick film
Case: SOT227B
Power: 0.1kW
Power without heatsink: 5W
Resistance: 3.3kΩ
Max. operating voltage: 1.5kV
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AC05000003301JAC00 VISHAY ac_ac-at_ac-ni.pdf Category: Power resistors
Description: Resistor: wire-wound; THT; 3.3kΩ; 5W; ±5%; Ø7.5x18mm; axial
Mounting: THT
Body dimensions: Ø7.5x18mm
Tolerance: ±5%
Leads: axial
Conform to the norm: AEC-Q200
Type of resistor: wire-wound
Power: 5W
Resistance: 3.3kΩ
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AC03000003301JAC00 VISHAY ac_ac-at_ac-ni.pdf Category: Power resistors
Description: Resistor: wire-wound; THT; 3.3kΩ; 3W; ±5%; Ø4.8x13mm; axial
Mounting: THT
Body dimensions: Ø4.8x13mm
Tolerance: ±5%
Leads: axial
Conform to the norm: AEC-Q200
Type of resistor: wire-wound
Power: 3W
Resistance: 3.3kΩ
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
VJ0201Y471JXACW1BC VISHAY pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A3CA0A4115D58749&compId=vjw1bcbascomseries.pdf?ci_sign=5129a4891ac23440100ea18c8f8081641574be6a Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 470pF; 50V; X7R; ±5%; SMD; 0201
Type of capacitor: ceramic
Capacitance: 0.47nF
Operating voltage: 50V
Dielectric: X7R
Tolerance: ±5%
Mounting: SMD
Case - inch: 0201
Case - mm: 0603
Operating temperature: -55...125°C
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WSLP40261L000FEA VISHAY pVersion=0046&contRep=ZT&docId=005056AB281E1EDF8BA92A5EEC73E0D6&compId=wslp4026.pdf?ci_sign=bb56d489cebdc7966b2158d9443c63a311148e23 Category: SMD resistors
Description: Resistor: metal strip; current shunt,sensing; SMD; 4026; 1mΩ; 7W
Type of resistor: metal strip
Kind of resistor: current shunt; sensing
Mounting: SMD
Case - inch: 4026
Case - mm: 10066
Resistance: 1mΩ
Power: 7W
Tolerance: ±1%
Operating temperature: -65...170°C
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WSLP40262L000FEA VISHAY pVersion=0046&contRep=ZT&docId=005056AB281E1EDF8BA92A5EEC73E0D6&compId=wslp4026.pdf?ci_sign=bb56d489cebdc7966b2158d9443c63a311148e23 Category: SMD resistors
Description: Resistor: metal strip; current shunt,sensing; SMD; 4026; 2mΩ; 5W
Type of resistor: metal strip
Kind of resistor: current shunt; sensing
Mounting: SMD
Case - inch: 4026
Case - mm: 10066
Resistance: 2mΩ
Power: 5W
Tolerance: ±1%
Operating temperature: -65...170°C
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WSL40261L000FEB VISHAY pVersion=0046&contRep=ZT&docId=005056AB281E1EDF84ED085ABA79E0D6&compId=wsl4026.pdf?ci_sign=a0891244b3efb7c5b95854515de949323889c47c Category: SMD resistors
Description: Resistor: metal strip; current shunt,sensing; SMD; 4026; 1mΩ; 3W
Type of resistor: metal strip
Kind of resistor: current shunt; sensing
Mounting: SMD
Case - inch: 4026
Case - mm: 10066
Resistance: 1mΩ
Power: 3W
Tolerance: ±1%
Operating temperature: -65...170°C
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SIHG22N60E-GE3 sihg22n60e.pdf
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13A; Idm: 56A; 227W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Pulsed drain current: 56A
Power dissipation: 227W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.18Ω
Mounting: THT
Gate charge: 86nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SIHG22N60EF-GE3 tf-sihg22n60ef-ge3.pdf
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12A; Idm: 46A; 179W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12A
Pulsed drain current: 46A
Power dissipation: 179W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 182mΩ
Mounting: THT
Gate charge: 96nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SiHP22N60AE-GE3 sihp22n60ae.pdf
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12A; Idm: 49A; 179W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12A
Pulsed drain current: 49A
Power dissipation: 179W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.18Ω
Mounting: THT
Gate charge: 96nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SIHP22N60E-GE3 sihp22n60e.pdf
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13A; Idm: 56A; 227W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Pulsed drain current: 56A
Power dissipation: 227W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.18Ω
Mounting: THT
Gate charge: 86nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SIHP22N60EF-GE3 sihp22n60ef.pdf
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12A; Idm: 46A; 179W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12A
Pulsed drain current: 46A
Power dissipation: 179W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 182mΩ
Mounting: THT
Gate charge: 96nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SIHP21N60EF-GE3 sihp21n60ef.pdf
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 14A; Idm: 53A; 227W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 14A
Power dissipation: 227W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 176mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 84nC
Pulsed drain current: 53A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SIHH21N60E-T1-GE3 sihh21n60e.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12A; Idm: 48A; 104W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12A
Pulsed drain current: 48A
Power dissipation: 104W
Case: PowerPAK® 8x8L
Gate-source voltage: ±30V
On-state resistance: 176mΩ
Mounting: SMD
Gate charge: 83nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
D2TO020CR0320FRE3 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFA091714DE2DE80D6&compId=d2to20.pdf?ci_sign=ae3bb0b8db71bf0fe12ac9c059f901e28ddf0efc
Hersteller: VISHAY
Category: Power resistors
Description: Resistor: thick film; SMD; TO263; 32mΩ; 25W; ±1%; -55÷155°C; 500pcs.
Type of resistor: thick film
Mounting: SMD
Case: TO263
Resistance: 32mΩ
Power: 25W
Tolerance: ±1%
Max. operating voltage: 500V
Operating temperature: -55...155°C
Conform to the norm: AEC-Q200
Quantity in set/package: 500pcs.
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
D2TO020CR0320FTE3 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFA091714DE2DE80D6&compId=d2to20.pdf?ci_sign=ae3bb0b8db71bf0fe12ac9c059f901e28ddf0efc
Hersteller: VISHAY
Category: Power resistors
Description: Resistor: thick film; SMD; TO263; 32mΩ; 25W; ±1%; -55÷155°C; 50pcs.
Type of resistor: thick film
Mounting: SMD
Case: TO263
Resistance: 32mΩ
Power: 25W
Tolerance: ±1%
Max. operating voltage: 500V
Operating temperature: -55...155°C
Conform to the norm: AEC-Q200
Quantity in set/package: 50pcs.
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
ES2G-E3/5BT es2f.pdf
Hersteller: VISHAY
Category: SMD universal diodes
Description: Diode: rectifying
Type of diode: rectifying
auf Bestellung 12800 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3200+0.12 EUR
Mindestbestellmenge: 3200
Im Einkaufswagen  Stück im Wert von  UAH
RCA12101R00FKEA pVersion=0046&contRep=ZT&docId=005056AB281E1EDF9FFA33905C0880D6&compId=rcae3.pdf?ci_sign=32afd2001bdcb5c2af72d5356a7a876ec5686752
RCA12101R00FKEA
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thick film; 1210; 1Ω; 500mW; ±1%; -55÷155°C; 100ppm/°C
Type of resistor: thick film
Case - inch: 1210
Case - mm: 3225
Resistance: 1Ω
Power: 0.5W
Tolerance: ±1%
Max. operating voltage: 200V
Operating temperature: -55...155°C
Temperature coefficient: 100ppm/°C
Conform to the norm: AEC-Q200
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SI3459BDV-T1-GE3 si3459bd.pdf
SI3459BDV-T1-GE3
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -60V; -2.9A; Idm: -8A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -2.9A
Pulsed drain current: -8A
Power dissipation: 3.3W
Case: TSOP6
Gate-source voltage: ±20V
On-state resistance: 288mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 504 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
67+1.07 EUR
81+0.88 EUR
104+0.69 EUR
228+0.31 EUR
241+0.3 EUR
Mindestbestellmenge: 67
Im Einkaufswagen  Stück im Wert von  UAH
SI3473CDV-T1-GE3 si3473cd.pdf
SI3473CDV-T1-GE3
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -12V; -8A; Idm: -20A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -8A
Pulsed drain current: -20A
Power dissipation: 4.2W
Case: TSOP6
Gate-source voltage: ±8V
On-state resistance: 36mΩ
Mounting: SMD
Gate charge: 65nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2940 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
66+1.09 EUR
86+0.84 EUR
210+0.34 EUR
222+0.32 EUR
Mindestbestellmenge: 66
Im Einkaufswagen  Stück im Wert von  UAH
SI3458BDV-T1-GE3 Si3458BDV.PDF
SI3458BDV-T1-GE3
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 4.1A; Idm: 10A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 4.1A
Pulsed drain current: 10A
Power dissipation: 3.3W
Case: TSOP6
Gate-source voltage: ±20V
On-state resistance: 128mΩ
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1459 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
66+1.09 EUR
85+0.84 EUR
169+0.42 EUR
178+0.4 EUR
Mindestbestellmenge: 66
Im Einkaufswagen  Stück im Wert von  UAH
SI3417DV-T1-GE3 si3417dv.pdf
SI3417DV-T1-GE3
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -8A; Idm: -50A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -8A
Pulsed drain current: -50A
Power dissipation: 2.7W
Case: TSOP6
Gate-source voltage: ±20V
On-state resistance: 25.2mΩ
Mounting: SMD
Gate charge: 50nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SI3433CDV-T1-GE3 si3433cdv.pdf
SI3433CDV-T1-GE3
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -6A; Idm: -20A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -6A
Pulsed drain current: -20A
Power dissipation: 3.3W
Case: TSOP6
Gate-source voltage: ±8V
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 45nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SI3437DV-T1-GE3 si3437dv.pdf
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -150V; -1.4A; Idm: -5A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -1.4A
Pulsed drain current: -5A
Power dissipation: 3.2W
Case: TSOP6
Gate-source voltage: ±20V
On-state resistance: 790mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SI3407DV-T1-BE3 si3407dv.pdf
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -8A; Idm: -25A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -8A
Pulsed drain current: -25A
Power dissipation: 4.2W
Case: TSOP6
Gate-source voltage: ±12V
On-state resistance: 32.7mΩ
Mounting: SMD
Gate charge: 63nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
Si3410DV-T1-GE3 si3410dv.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 8A; Idm: 30A; 4.1W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 8A
Pulsed drain current: 30A
Power dissipation: 4.1W
Case: TSOP6
Gate-source voltage: ±20V
On-state resistance: 23mΩ
Mounting: SMD
Gate charge: 33nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SI3424CDV-T1-BE3 si3424cdv.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 8A; Idm: 20A; 3.6W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 8A
Pulsed drain current: 20A
Power dissipation: 3.6W
Case: TSOP6
Gate-source voltage: ±20V
On-state resistance: 32mΩ
Mounting: SMD
Gate charge: 12.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SI3424CDV-T1-GE3 si3424cdv.pdf
SI3424CDV-T1-GE3
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 8A; Idm: 20A; 3.6W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 8A
Pulsed drain current: 20A
Power dissipation: 3.6W
Case: TSOP6
Gate-source voltage: ±20V
On-state resistance: 32mΩ
Mounting: SMD
Gate charge: 12.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SI3429EDV-T1-GE3 pVersion=0046&contRep=ZT&docId=005056AB90B41EDABB85BFC1EE8AC0C7&compId=si3429edv.pdf?ci_sign=b8d57614daeb5242d42ba3348e5f19e731ff9f22
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -8A; Idm: -40A; 2.7W; TSOP6
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -8A
Pulsed drain current: -40A
Power dissipation: 2.7W
Case: TSOP6
Gate-source voltage: ±8V
On-state resistance: 38mΩ
Mounting: SMD
Gate charge: 43.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SI3430DV-T1-E3 si3430dv.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 2.4A; Idm: 8A; 2W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 2.4A
Pulsed drain current: 8A
Power dissipation: 2W
Case: TSOP6
Gate-source voltage: ±20V
On-state resistance: 0.185Ω
Mounting: SMD
Gate charge: 8.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
Si3430DV-T1-GE3 si3430dv.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 2.4A; Idm: 8A; 2W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 2.4A
Pulsed drain current: 8A
Power dissipation: 2W
Case: TSOP6
Gate-source voltage: ±20V
On-state resistance: 0.185Ω
Mounting: SMD
Gate charge: 8.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SI3433CDV-T1-E3 si3433cdv.pdf
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -6A; Idm: -20A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -6A
Pulsed drain current: -20A
Power dissipation: 3.3W
Case: TSOP6
Gate-source voltage: ±8V
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 45nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SI3437DV-T1-E3 si3437dv.pdf
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -150V; -1.4A; Idm: -5A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -1.4A
Pulsed drain current: -5A
Power dissipation: 3.2W
Case: TSOP6
Gate-source voltage: ±20V
On-state resistance: 790mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SI3438DV-T1-E3 si3438dv.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 7.4A; Idm: 20A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 7.4A
Pulsed drain current: 20A
Power dissipation: 3.5W
Case: TSOP6
Gate-source voltage: ±20V
On-state resistance: 42.5mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SI3438DV-T1-GE3 si3438dv.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 7.4A; Idm: 20A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 7.4A
Pulsed drain current: 20A
Power dissipation: 3.5W
Case: TSOP6
Gate-source voltage: ±20V
On-state resistance: 42.5mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SI3440ADV-T1-GE3 si3440adv.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 150V; 2.2A; Idm: 4A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 2.2A
Pulsed drain current: 4A
Power dissipation: 3.6W
Case: TSOP6
Gate-source voltage: ±20V
On-state resistance: 432mΩ
Mounting: SMD
Gate charge: 4nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SI3440DV-T1-E3 si3440dv.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 150V; 1.2A; Idm: 6A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 1.2A
Pulsed drain current: 6A
Power dissipation: 1.14W
Case: TSOP6
Gate-source voltage: ±20V
On-state resistance: 0.4Ω
Mounting: SMD
Gate charge: 8nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SI3440DV-T1-GE3 si3440dv.pdf
SI3440DV-T1-GE3
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 150V; 1.2A; Idm: 6A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 1.2A
Pulsed drain current: 6A
Power dissipation: 1.14W
Case: TSOP6
Gate-source voltage: ±20V
On-state resistance: 0.4Ω
Mounting: SMD
Gate charge: 8nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SI3442BDV-T1-E3 si3442bd.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 4.2A; Idm: 20A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 4.2A
Pulsed drain current: 20A
Power dissipation: 1.67W
Case: TSOP6
Gate-source voltage: ±12V
On-state resistance: 90mΩ
Mounting: SMD
Gate charge: 5nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SI3442BDV-T1-GE3 si3442bd.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 4.2A; Idm: 20A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 4.2A
Pulsed drain current: 20A
Power dissipation: 1.67W
Case: TSOP6
Gate-source voltage: ±12V
On-state resistance: 90mΩ
Mounting: SMD
Gate charge: 5nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SI3453DV-T1-GE3 si3453dv.pdf
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -3.4A; Idm: -6A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.4A
Pulsed drain current: -6A
Power dissipation: 3W
Case: TSOP6
Gate-source voltage: ±20V
On-state resistance: 276mΩ
Mounting: SMD
Gate charge: 6.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SI3456DDV-T1-E3 si3456ddv.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 6.3A; Idm: 20A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 6.3A
Pulsed drain current: 20A
Power dissipation: 2.7W
Case: TSOP6
Gate-source voltage: ±20V
On-state resistance: 50mΩ
Mounting: SMD
Gate charge: 9nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MBB0207VD1004BC100 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5ADBC751C8F1A51BF&compId=VISHAY_mbxsma.pdf?ci_sign=7674755c49503b25440d14cb7d501c82d9f4f1dd
MBB0207VD1004BC100
Hersteller: VISHAY
Category: THT Resistors
Description: Resistor: metal film; THT; 1MΩ; 0.6W; ±0.1%; Ø0.6x28mm; Ø2.5x6.3mm
Operating temperature: -55...155°C
Resistance: 1MΩ
Tolerance: ±0.1%
Body dimensions: Ø2.5x6.3mm
Leads dimensions: Ø0.6x28mm
Temperature coefficient: 25ppm/°C
Max. operating voltage: 350V
Leads: axial
Mounting: THT
Type of resistor: metal film
Power: 0.6W
auf Bestellung 1986 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
66+1.09 EUR
103+0.7 EUR
109+0.66 EUR
500+0.64 EUR
1000+0.63 EUR
Mindestbestellmenge: 66
Im Einkaufswagen  Stück im Wert von  UAH
VJ0201A330JXACW1BC pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A3CA0A4115D58749&compId=vjw1bcbascomseries.pdf?ci_sign=5129a4891ac23440100ea18c8f8081641574be6a
Hersteller: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 33pF; 50V; C0G (NP0); ±5%; SMD; 0201
Type of capacitor: ceramic
Capacitance: 33pF
Operating voltage: 50V
Dielectric: C0G (NP0)
Tolerance: ±5%
Mounting: SMD
Case - inch: 0201
Case - mm: 0603
Operating temperature: -55...125°C
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RCA08054R75FKEA pVersion=0046&contRep=ZT&docId=005056AB281E1EDF9FFA33905C0880D6&compId=rcae3.pdf?ci_sign=32afd2001bdcb5c2af72d5356a7a876ec5686752
RCA08054R75FKEA
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thick film; 0805; 4.75Ω; 125mW; ±1%; -55÷155°C; 100ppm/°C
Type of resistor: thick film
Case - inch: 0805
Case - mm: 2012
Resistance: 4.75Ω
Power: 0.125W
Tolerance: ±1%
Max. operating voltage: 150V
Operating temperature: -55...155°C
Temperature coefficient: 100ppm/°C
Conform to the norm: AEC-Q200
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SMCJ24A-E3/9AT smcj.pdf
Hersteller: VISHAY
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS
Type of diode: TVS
auf Bestellung 14000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3500+0.2 EUR
Mindestbestellmenge: 3500
Im Einkaufswagen  Stück im Wert von  UAH
SMCJ24AHE3_A/H smcj.pdf
Hersteller: VISHAY
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS
Type of diode: TVS
auf Bestellung 13600 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
850+0.43 EUR
Mindestbestellmenge: 850
Im Einkaufswagen  Stück im Wert von  UAH
SA7.5CA-E3/54 pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDAFB2FCD792F700D4&compId=sa5a_ser.pdf?ci_sign=48726553eaaf43795ac6d6e1187381a5648fca7f
SA7.5CA-E3/54
Hersteller: VISHAY
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 8.33÷9.21V; 38.8A; bidirectional; DO15; 500W
Type of diode: TVS
Mounting: THT
Kind of package: 13 inch reel
Case: DO15
Semiconductor structure: bidirectional
Leakage current: 0.1mA
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Peak pulse power dissipation: 0.5kW
Max. off-state voltage: 7.5V
Max. forward impulse current: 38.8A
Breakdown voltage: 8.33...9.21V
auf Bestellung 3971 Stücke:
Lieferzeit 14-21 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
M64W202KB40 pVersion=0046&contRep=ZT&docId=005056AB752F1ED48EB682352A2D61EC&compId=64.pdf?ci_sign=8693dbd4cca779c0fbd034cab01c9dc794367d1f
M64W202KB40
Hersteller: VISHAY
Category: 3/8 inch multiturn THT trimmers
Description: Potentiometer: mounting; vertical,multiturn; 2kΩ; 500mW; THT; ±10%
Type of potentiometer: mounting
Kind of potentiometer: multiturn; vertical
Resistance: 2kΩ
Power: 0.5W
Mounting: THT
Tolerance: ±10%
Characteristics: linear
Track material: cermet
Operating temperature: -55...155°C
Potentiometer standard - inch: 3/8"
Temperature coefficient: 100ppm/°C
Terminal pitch: 2.54mm
Number of mechanical turns: 23 ±5
IP rating: IP67
Torque: 1,5Ncm
Control: vertical
Leads: W
auf Bestellung 322 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
19+3.93 EUR
35+2.04 EUR
38+1.93 EUR
Mindestbestellmenge: 19
Im Einkaufswagen  Stück im Wert von  UAH
M64Y202KB40 pVersion=0046&contRep=ZT&docId=005056AB752F1ED48EB682352A2D61EC&compId=64.pdf?ci_sign=8693dbd4cca779c0fbd034cab01c9dc794367d1f
M64Y202KB40
Hersteller: VISHAY
Category: 3/8 inch multiturn THT trimmers
Description: Potentiometer: mounting; vertical,multiturn; 2kΩ; 500mW; THT; ±10%
Type of potentiometer: mounting
Kind of potentiometer: multiturn; vertical
Resistance: 2kΩ
Power: 0.5W
Mounting: THT
Tolerance: ±10%
Characteristics: linear
Track material: cermet
Operating temperature: -55...155°C
Potentiometer standard - inch: 3/8"
Temperature coefficient: 100ppm/°C
Terminal pitch: 2.54x2.54mm
Number of mechanical turns: 23 ±5
IP rating: IP67
Torque: 1,5Ncm
Control: vertical
Leads: Y
auf Bestellung 753 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
19+3.86 EUR
38+1.93 EUR
40+1.83 EUR
Mindestbestellmenge: 19
Im Einkaufswagen  Stück im Wert von  UAH
T73YP202KT20 pVersion=0046&contRep=ZT&docId=E1C05A131B997FF1A6F5005056AB5A8F&compId=t73.pdf?ci_sign=7423a7eb6e2231f89b3025b0b3f40cdc51de587b
T73YP202KT20
Hersteller: VISHAY
Category: Single turn THT trimmers
Description: Potentiometer: mounting; single turn,horizontal; 2kΩ; 500mW; ±10%
Type of potentiometer: mounting
Kind of potentiometer: horizontal; single turn
Resistance: 2kΩ
Power: 0.5W
Mounting: THT
Tolerance: ±10%
Characteristics: linear
Manufacturer series: T73RYP
Track material: cermet
Operating temperature: -55...125°C
Potentiometer standard - inch: 1/4"
Temperature coefficient: 100ppm/°C
Terminal pitch: 2.54x2.54mm
Max. operating voltage: 250V
IP rating: IP67
Torque: 2Ncm
Electrical rotation angle: 250 ±15°
Potentiometer features: clear scale reading
Mechanical rotation angle: 290 ±5°
auf Bestellung 234 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
39+1.84 EUR
42+1.72 EUR
77+0.93 EUR
82+0.87 EUR
Mindestbestellmenge: 39
Im Einkaufswagen  Stück im Wert von  UAH
M64P202KB40 pVersion=0046&contRep=ZT&docId=E1C042E07EAC50F1A6F5005056AB5A8F&compId=64P.pdf?ci_sign=2d6048c3ad9220b4d16066cef1de520424b87840
M64P202KB40
Hersteller: VISHAY
Category: 3/8 inch multiturn THT trimmers
Description: Potentiometer: mounting; horizontal,multiturn; 2kΩ; 500mW; THT
Type of potentiometer: mounting
Kind of potentiometer: horizontal; multiturn
Resistance: 2kΩ
Power: 0.5W
Mounting: THT
Tolerance: ±10%
Characteristics: linear
Track material: cermet
Operating temperature: -55...155°C
Potentiometer standard - inch: 3/8"
Temperature coefficient: 100ppm/°C
Terminal pitch: 2.54x2.54mm
Number of mechanical turns: 23 ±5
IP rating: IP67
Torque: 1,5Ncm
Control: horizontal
Leads: P
auf Bestellung 250 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
16+4.69 EUR
28+2.56 EUR
30+2.42 EUR
Mindestbestellmenge: 16
Im Einkaufswagen  Stück im Wert von  UAH
BZT52C75-E3-08 pVersion=0046&contRep=ZT&docId=005056AB281E1EDEB79046061487C0D6&compId=bzt52_ser.pdf?ci_sign=7a70b048037601d1a47eeb5cd44c2aa040f4c6ce
Hersteller: VISHAY
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 75V; SMD; 7 inch reel; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 75V
Mounting: SMD
Tolerance: ±5%
Kind of package: 7 inch reel
Case: SOD123
Semiconductor structure: single diode
Leakage current: 0.1µA
Manufacturer series: BZT52C
Quantity in set/package: 3000pcs.
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BZT52C75-E3-18 pVersion=0046&contRep=ZT&docId=005056AB281E1EDEB79046061487C0D6&compId=bzt52_ser.pdf?ci_sign=7a70b048037601d1a47eeb5cd44c2aa040f4c6ce
Hersteller: VISHAY
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 75V; SMD; 13 inch reel; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 75V
Mounting: SMD
Tolerance: ±5%
Kind of package: 13 inch reel
Case: SOD123
Semiconductor structure: single diode
Leakage current: 0.1µA
Manufacturer series: BZT52C
Quantity in set/package: 10000pcs.
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BZT52C75-G3-08 pVersion=0046&contRep=ZT&docId=005056AB281E1EDEB79059396165A0D6&compId=bzt52-g_ser.pdf?ci_sign=e74d5114b81f65de34d284234e478f9a7a61d03d
Hersteller: VISHAY
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 75V; SMD; 7 inch reel; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 75V
Mounting: SMD
Tolerance: ±5%
Kind of package: 7 inch reel
Case: SOD123
Semiconductor structure: single diode
Leakage current: 0.1µA
Manufacturer series: BZT52-G
Quantity in set/package: 3000pcs.
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BZT52C75-G3-18 pVersion=0046&contRep=ZT&docId=005056AB281E1EDEB79059396165A0D6&compId=bzt52-g_ser.pdf?ci_sign=e74d5114b81f65de34d284234e478f9a7a61d03d
Hersteller: VISHAY
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 75V; SMD; 13 inch reel; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 75V
Mounting: SMD
Tolerance: ±5%
Kind of package: 13 inch reel
Case: SOD123
Semiconductor structure: single diode
Leakage current: 0.1µA
Manufacturer series: BZT52-G
Quantity in set/package: 10000pcs.
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TSSP4056 pVersion=0046&contRep=ZT&docId=005056AB281E1EDCAEAF62627735C0D2&compId=TSSP4056.pdf?ci_sign=211a4d4cb929fa6e70cacd6d4948053f42d7a141
Hersteller: VISHAY
Category: IR receiver modules
Description: Integrated IR receiver; 56kHz; 2.5÷5.5V; 45°
Type of photoelement: integrated IR receiver
Frequency: 56kHz
Mounting: THT
Supply voltage: 2.5...5.5V
Viewing angle: 45°
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GRC00BA3301JTNL pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB5D58F0C6CC840D2&compId=GRC.pdf?ci_sign=92d3c6a8fa5a96a5ca5511c797a4e4aa77bdafd1
GRC00BA3301JTNL
Hersteller: VISHAY
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 33uF; 63VDC; ±20%; 2000h; -40÷105°C
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 33µF
Operating voltage: 63V DC
Tolerance: ±20%
Operating temperature: -40...105°C
Service life: 2000h
Dimensions: 6.3x11mm
auf Bestellung 1750 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
590+0.12 EUR
890+0.081 EUR
1120+0.064 EUR
1750+0.041 EUR
Mindestbestellmenge: 590
Im Einkaufswagen  Stück im Wert von  UAH
GRC00BA3301JTFL pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB5D58F0C6CC840D2&compId=GRC.pdf?ci_sign=92d3c6a8fa5a96a5ca5511c797a4e4aa77bdafd1
GRC00BA3301JTFL
Hersteller: VISHAY
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 33uF; 63VDC; ±20%; 2000h; -40÷105°C
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 33µF
Operating voltage: 63V DC
Tolerance: ±20%
Operating temperature: -40...105°C
Service life: 2000h
Dimensions: 6.3x11mm
Manufacturer series: GRC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GSC00AF3301JTFL pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB5D59CBCE69FA0D2&compId=GSC.pdf?ci_sign=d7e452a815def9627909872e63e3259a2f2c8e7d
Hersteller: VISHAY
Category: SMD electrolytic capacitors
Description: Capacitor: electrolytic; SMD; 33uF; 63VDC; ±20%; -55÷105°C; GSC
Type of capacitor: electrolytic
Mounting: SMD
Capacitance: 33µF
Operating voltage: 63V DC
Tolerance: ±20%
Operating temperature: -55...105°C
Height: 10mm
Nominal life: 2000h
Dimensions: 8x10mm
Manufacturer series: GSC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RTOP100V3301JB pVersion=0046&contRep=ZT&docId=005056AB281E1EDF9FF92797025840D6&compId=rtop.pdf?ci_sign=caff3dcc2dac20229d14267bdbd72f5bab85d4ca
Hersteller: VISHAY
Category: Power resistors
Description: Resistor: thick film; screw; SOT227B; 3.3kΩ; 100W; ±5%; -55÷125°C
Mounting: screw
Tolerance: ±5%
Operating temperature: -55...125°C
Resistor features: needs additional heatsink
Recommended heatsink: thermal resistance 0,5 K/W
Type of resistor: thick film
Case: SOT227B
Power: 0.1kW
Power without heatsink: 5W
Resistance: 3.3kΩ
Max. operating voltage: 1.5kV
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AC05000003301JAC00 ac_ac-at_ac-ni.pdf
Hersteller: VISHAY
Category: Power resistors
Description: Resistor: wire-wound; THT; 3.3kΩ; 5W; ±5%; Ø7.5x18mm; axial
Mounting: THT
Body dimensions: Ø7.5x18mm
Tolerance: ±5%
Leads: axial
Conform to the norm: AEC-Q200
Type of resistor: wire-wound
Power: 5W
Resistance: 3.3kΩ
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AC03000003301JAC00 ac_ac-at_ac-ni.pdf
Hersteller: VISHAY
Category: Power resistors
Description: Resistor: wire-wound; THT; 3.3kΩ; 3W; ±5%; Ø4.8x13mm; axial
Mounting: THT
Body dimensions: Ø4.8x13mm
Tolerance: ±5%
Leads: axial
Conform to the norm: AEC-Q200
Type of resistor: wire-wound
Power: 3W
Resistance: 3.3kΩ
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
VJ0201Y471JXACW1BC pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A3CA0A4115D58749&compId=vjw1bcbascomseries.pdf?ci_sign=5129a4891ac23440100ea18c8f8081641574be6a
Hersteller: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 470pF; 50V; X7R; ±5%; SMD; 0201
Type of capacitor: ceramic
Capacitance: 0.47nF
Operating voltage: 50V
Dielectric: X7R
Tolerance: ±5%
Mounting: SMD
Case - inch: 0201
Case - mm: 0603
Operating temperature: -55...125°C
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WSLP40261L000FEA pVersion=0046&contRep=ZT&docId=005056AB281E1EDF8BA92A5EEC73E0D6&compId=wslp4026.pdf?ci_sign=bb56d489cebdc7966b2158d9443c63a311148e23
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: metal strip; current shunt,sensing; SMD; 4026; 1mΩ; 7W
Type of resistor: metal strip
Kind of resistor: current shunt; sensing
Mounting: SMD
Case - inch: 4026
Case - mm: 10066
Resistance: 1mΩ
Power: 7W
Tolerance: ±1%
Operating temperature: -65...170°C
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WSLP40262L000FEA pVersion=0046&contRep=ZT&docId=005056AB281E1EDF8BA92A5EEC73E0D6&compId=wslp4026.pdf?ci_sign=bb56d489cebdc7966b2158d9443c63a311148e23
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: metal strip; current shunt,sensing; SMD; 4026; 2mΩ; 5W
Type of resistor: metal strip
Kind of resistor: current shunt; sensing
Mounting: SMD
Case - inch: 4026
Case - mm: 10066
Resistance: 2mΩ
Power: 5W
Tolerance: ±1%
Operating temperature: -65...170°C
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WSL40261L000FEB pVersion=0046&contRep=ZT&docId=005056AB281E1EDF84ED085ABA79E0D6&compId=wsl4026.pdf?ci_sign=a0891244b3efb7c5b95854515de949323889c47c
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: metal strip; current shunt,sensing; SMD; 4026; 1mΩ; 3W
Type of resistor: metal strip
Kind of resistor: current shunt; sensing
Mounting: SMD
Case - inch: 4026
Case - mm: 10066
Resistance: 1mΩ
Power: 3W
Tolerance: ±1%
Operating temperature: -65...170°C
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
Wählen Sie Seite:   [  << Vorherige Seite ]  1 602 1204 1806 2408 3010 3612 4214 4816 5418 6003 6004 6005 6006 6007 6008 6009 6010 6011 6012 6013 6020 6026  [ Nächste Seite >> ]