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BTA208X-600E,127 BTA208X-600E,127 WeEn Semiconductors _ween_psg2020.pdf Category: Triacs
Description: Triac; 600V; 8A; TO220FP; Igt: 10mA; Ifsm: 65A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 8A
Case: TO220FP
Gate current: 10mA
Max. forward impulse current: 65A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
auf Bestellung 965 Stücke:
Lieferzeit 14-21 Tag (e)
69+1.04 EUR
82+0.88 EUR
159+0.45 EUR
168+0.43 EUR
Mindestbestellmenge: 69
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BTA208X-600F,127 BTA208X-600F,127 WeEn Semiconductors bta208x-600f.pdf Category: Triacs
Description: Triac; 600V; 8A; TO220FP; Igt: 25mA; Ifsm: 65A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 8A
Case: TO220FP
Gate current: 25mA
Max. forward impulse current: 65A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
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BTA312B-600B,118 BTA312B-600B,118 WeEn Semiconductors BTA312B-600B.pdf _ween_psg2020.pdf Category: Triacs
Description: Triac; 600V; 12A; D2PAK; Igt: 50mA; Ifsm: 100A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: D2PAK
Gate current: 50mA
Max. forward impulse current: 100A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
auf Bestellung 329 Stücke:
Lieferzeit 14-21 Tag (e)
63+1.14 EUR
75+0.97 EUR
122+0.59 EUR
129+0.56 EUR
Mindestbestellmenge: 63
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BTA312B-600C,118 BTA312B-600C,118 WeEn Semiconductors bta312b-600c.pdf Category: Triacs
Description: Triac; 600V; 12A; D2PAK; Igt: 35mA; Ifsm: 100A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: D2PAK
Gate current: 35mA
Max. forward impulse current: 100A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
Produkt ist nicht verfügbar
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BTA312B-600CT,118 BTA312B-600CT,118 WeEn Semiconductors BTA312B-600CT.pdf _ween_psg2020.pdf Category: Triacs
Description: Triac; 600V; 12A; D2PAK; Igt: 35mA; Ifsm: 100A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: D2PAK
Gate current: 35mA
Max. forward impulse current: 100A
Technology: 3Q; Hi-Com
Features of semiconductor devices: high temperature; sensitive gate
Mounting: SMD
Kind of package: reel; tape
auf Bestellung 485 Stücke:
Lieferzeit 14-21 Tag (e)
49+1.49 EUR
59+1.23 EUR
90+0.80 EUR
95+0.76 EUR
Mindestbestellmenge: 49
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BTA312B-600D,118 BTA312B-600D,118 WeEn Semiconductors _ween_psg2020.pdf Category: Triacs
Description: Triac; 600V; 12A; D2PAK; Igt: 5mA; Ifsm: 100A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: D2PAK
Gate current: 5mA
Max. forward impulse current: 100A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
Produkt ist nicht verfügbar
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BTA312B-600E,118 BTA312B-600E,118 WeEn Semiconductors bta312b-600e.pdf Category: Triacs
Description: Triac; 600V; 12A; D2PAK; Igt: 10mA; Ifsm: 100A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: D2PAK
Gate current: 10mA
Max. forward impulse current: 100A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
Produkt ist nicht verfügbar
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BTA312G-600CTQ BTA312G-600CTQ WeEn Semiconductors _ween_psg2020.pdf Category: Triacs
Description: Triac; 600V; 12A; I2PAK; Igt: 35mA; Ifsm: 100A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: I2PAK
Gate current: 35mA
Max. forward impulse current: 100A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
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BTA312X-600B,127 BTA312X-600B,127 WeEn Semiconductors bta312x-600b.pdf Category: Triacs
Description: Triac; 600V; 12A; TO220FP; Igt: 50mA; Ifsm: 100A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: TO220FP
Gate current: 50mA
Max. forward impulse current: 100A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
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BTA312X-600C,127 BTA312X-600C,127 WeEn Semiconductors bta312x-600c.pdf Category: Triacs
Description: Triac; 600V; 12A; TO220FP; Igt: 35mA; Ifsm: 100A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: TO220FP
Gate current: 35mA
Max. forward impulse current: 100A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
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BTA312X-600D,127 BTA312X-600D,127 WeEn Semiconductors bta312x-600d.pdf Category: Triacs
Description: Triac; 600V; 12A; TO220FP; Igt: 5mA; Ifsm: 100A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: TO220FP
Gate current: 5mA
Max. forward impulse current: 100A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
auf Bestellung 690 Stücke:
Lieferzeit 14-21 Tag (e)
58+1.24 EUR
82+0.88 EUR
130+0.55 EUR
138+0.52 EUR
Mindestbestellmenge: 58
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BTA312X-600E,127 BTA312X-600E,127 WeEn Semiconductors BTA312X-600E.pdf _ween_psg2020.pdf Category: Triacs
Description: Triac; 600V; 12A; TO220FP; Igt: 10mA; Ifsm: 100A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: TO220FP
Gate current: 10mA
Max. forward impulse current: 100A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
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BTA312Y-600C,127 BTA312Y-600C,127 WeEn Semiconductors bta312y-600c.pdf _ween_psg2020.pdf Category: Triacs
Description: Triac; 600V; 12A; TO220AB; Igt: 35mA; Ifsm: 100A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: TO220AB
Gate current: 35mA
Max. forward impulse current: 100A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
auf Bestellung 414 Stücke:
Lieferzeit 14-21 Tag (e)
70+1.03 EUR
83+0.87 EUR
109+0.66 EUR
115+0.62 EUR
250+0.61 EUR
Mindestbestellmenge: 70
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BT145-800R,127 BT145-800R,127 WeEn Semiconductors bt145-800r.pdf Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 25A; 16A; Igt: 5mA; TO220AB; THT; tube; 2us
Type of thyristor: thyristor
Max. off-state voltage: 0.8kV
Max. load current: 25A
Load current: 16A
Gate current: 5mA
Case: TO220AB
Mounting: THT
Kind of package: tube
Max. forward impulse current: 0.3kA
Turn-on time: 2µs
auf Bestellung 3450 Stücke:
Lieferzeit 14-21 Tag (e)
40+1.79 EUR
54+1.33 EUR
99+0.73 EUR
105+0.69 EUR
Mindestbestellmenge: 40
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BTA208X-800B,127 BTA208X-800B,127 WeEn Semiconductors bta208x-800b.pdf Category: Triacs
Description: Triac; 800V; 8A; TO220FP; Igt: 50mA; Ifsm: 65A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 8A
Case: TO220FP
Gate current: 50mA
Max. forward impulse current: 65A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
auf Bestellung 298 Stücke:
Lieferzeit 14-21 Tag (e)
93+0.77 EUR
117+0.61 EUR
147+0.49 EUR
155+0.46 EUR
Mindestbestellmenge: 93
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BTA208X-800B/L02Q WeEn Semiconductors bta208x-800b.pdf Category: Triacs
Description: Triac; 800V; 8A; TO220FP; Igt: 50mA; Ifsm: 71A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 8A
Case: TO220FP
Gate current: 50mA
Max. forward impulse current: 71A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
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BTA208X-800E,127 BTA208X-800E,127 WeEn Semiconductors _ween_psg2020.pdf Category: Triacs
Description: Triac; 800V; 8A; TO220FP; Igt: 10mA; Ifsm: 65A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 8A
Case: TO220FP
Gate current: 10mA
Max. forward impulse current: 65A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
auf Bestellung 912 Stücke:
Lieferzeit 14-21 Tag (e)
100+0.72 EUR
115+0.63 EUR
126+0.57 EUR
149+0.48 EUR
157+0.46 EUR
250+0.44 EUR
Mindestbestellmenge: 100
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BTA208X-800F,127 BTA208X-800F,127 WeEn Semiconductors bta208x-800f.pdf Category: Triacs
Description: Triac; 800V; 8A; TO220FP; Igt: 25mA; Ifsm: 65A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 8A
Case: TO220FP
Gate current: 25mA
Max. forward impulse current: 65A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
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WNSC2D201200CWQ WNSC2D201200CWQ WeEn Semiconductors WNSC2D201200CW.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10Ax2; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward impulse current: 72A
Kind of package: tube
Max. load current: 20A
Produkt ist nicht verfügbar
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WNSC2D201200WQ WNSC2D201200WQ WeEn Semiconductors WNSC2D201200W.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; TO247-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 20A
Semiconductor structure: single diode
Case: TO247-2
Max. forward voltage: 2.1V
Max. forward impulse current: 125A
Kind of package: tube
Produkt ist nicht verfügbar
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BYC10-600CT,127 BYC10-600CT,127 WeEn Semiconductors byc10-600ct.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 5Ax2; tube; Ifsm: 40A; SOT78,TO220AB
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 5A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: superfast switching
Kind of package: tube
Max. forward impulse current: 40A
Case: SOT78; TO220AB
Max. forward voltage: 1.4V
Reverse recovery time: 19ns
Max. load current: 10A
Heatsink thickness: 1.25...1.4mm
Produkt ist nicht verfügbar
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BTA225B-600B,118 BTA225B-600B,118 WeEn Semiconductors bta225-800b_0.pdf Category: Triacs
Description: Triac; 600V; 25A; D2PAK; Igt: 50mA; Ifsm: 190A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 25A
Case: D2PAK
Gate current: 50mA
Technology: 3Q; Hi-Com
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: sensitive gate
Max. forward impulse current: 190A
auf Bestellung 4915 Stücke:
Lieferzeit 14-21 Tag (e)
40+1.80 EUR
48+1.50 EUR
69+1.04 EUR
73+0.99 EUR
Mindestbestellmenge: 40
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SMBJ20AJ SMBJ20AJ WeEn Semiconductors SMBJ Series.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 22.41÷24.28V; 18.6A; unidirectional; SMB; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 20V
Breakdown voltage: 22.41...24.28V
Max. forward impulse current: 18.6A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
auf Bestellung 660 Stücke:
Lieferzeit 14-21 Tag (e)
380+0.19 EUR
620+0.12 EUR
660+0.11 EUR
Mindestbestellmenge: 380
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BT158W-1200TQ BT158W-1200TQ WeEn Semiconductors BT158W-1200T.pdf _ween_psg2020.pdf Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 126A; 80A; Igt: 70mA; SOT429,TO247-3; THT
Type of thyristor: thyristor
Max. off-state voltage: 1.2kV
Max. load current: 126A
Load current: 80A
Gate current: 70mA
Case: SOT429; TO247-3
Mounting: THT
Kind of package: tube
Max. forward impulse current: 1.1kA
Turn-on time: 2µs
auf Bestellung 25 Stücke:
Lieferzeit 14-21 Tag (e)
10+7.38 EUR
15+4.92 EUR
16+4.65 EUR
25+4.56 EUR
Mindestbestellmenge: 10
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BYC10-600PQ BYC10-600PQ WeEn Semiconductors BYC10-600P.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10A; tube; Ifsm: 150A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 10A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 150A
Case: SOD59; TO220AC
Max. forward voltage: 2V
Reverse recovery time: 18ns
Max. load current: 20A
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BT155W-1200T-AQ BT155W-1200T-AQ WeEn Semiconductors BT155W-1200T-AQ.pdf _ween_psg2020.pdf Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 79A; 50A; Igt: 3mA; SOT429,TO247-3; THT
Type of thyristor: thyristor
Max. off-state voltage: 1.2kV
Max. load current: 79A
Load current: 50A
Gate current: 3mA
Case: SOT429; TO247-3
Mounting: THT
Kind of package: tube
Max. forward impulse current: 0.65kA
Turn-on time: 2µs
Application: automotive industry
auf Bestellung 196 Stücke:
Lieferzeit 14-21 Tag (e)
15+4.85 EUR
24+3.06 EUR
25+2.90 EUR
Mindestbestellmenge: 15
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BYV29-500.127 BYV29-500.127 WeEn Semiconductors BYV29-500.pdf _ween_psg2020.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 500V; 9A; tube; Ifsm: 110A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 500V
Load current: 9A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 110A
Case: SOD59; TO220AC
Max. forward voltage: 0.9V
Heatsink thickness: max. 1.3mm
Reverse recovery time: 60ns
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BT138-800.127 BT138-800.127 WeEn Semiconductors BT138-800.pdf _ween_psg2020.pdf Category: Triacs
Description: Triac; 800V; 12A; TO220AB; Igt: 35/70mA; Ifsm: 95A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 12A
Case: TO220AB
Gate current: 35/70mA
Mounting: THT
Kind of package: tube
Max. forward impulse current: 95A
Features of semiconductor devices: sensitive gate
Technology: 4Q
Produkt ist nicht verfügbar
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BT137-600.127 BT137-600.127 WeEn Semiconductors BT137-600.pdf _ween_psg2020.pdf Category: Triacs
Description: Triac; 600V; 8A; TO220AB; Igt: 35/70mA; Ifsm: 65A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 8A
Case: TO220AB
Gate current: 35/70mA
Max. forward impulse current: 65A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
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BT137-800.127 BT137-800.127 WeEn Semiconductors BT137-800.pdf _ween_psg2020.pdf Category: Triacs
Description: Triac; 800V; 8A; TO220AB; Igt: 35/70mA; Ifsm: 65A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 8A
Case: TO220AB
Gate current: 35/70mA
Mounting: THT
Kind of package: tube
Max. forward impulse current: 65A
Features of semiconductor devices: sensitive gate
Technology: 4Q
Produkt ist nicht verfügbar
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BT139-600.127 BT139-600.127 WeEn Semiconductors BT139-600.pdf _ween_psg2020.pdf Category: Triacs
Description: Triac; 600V; 16A; TO220AB; Igt: 35/70mA; Ifsm: 155A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: TO220AB
Gate current: 35/70mA
Mounting: THT
Kind of package: tube
Max. forward impulse current: 155A
Features of semiconductor devices: sensitive gate
Technology: 4Q
Produkt ist nicht verfügbar
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BT134-600E.127 BT134-600E.127 WeEn Semiconductors BT134-600E.pdf _ween_psg2020.pdf Category: Triacs
Description: Triac; 600V; 4A; SIP3,SOT82; Igt: 10/25mA; Ifsm: 25A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: SIP3; SOT82
Gate current: 10/25mA
Mounting: THT
Kind of package: tube
Max. forward impulse current: 25A
Features of semiconductor devices: sensitive gate
Technology: 4Q
Produkt ist nicht verfügbar
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WNSC2D151200WQ WNSC2D151200WQ WeEn Semiconductors WNSC2D151200W.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15A; TO247-2; tube
Technology: SiC
Case: TO247-2
Mounting: THT
Kind of package: tube
Max. forward impulse current: 102A
Semiconductor structure: single diode
Max. off-state voltage: 1.2kV
Type of diode: Schottky rectifying
Load current: 15A
Max. forward voltage: 1.95V
Produkt ist nicht verfügbar
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BT137X-800.127 BT137X-800.127 WeEn Semiconductors BT137X-800.pdf _ween_psg2020.pdf Category: Triacs
Description: Triac; 800V; 8A; TO220FP; Igt: 35/70mA; Ifsm: 65A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 8A
Case: TO220FP
Gate current: 35/70mA
Max. forward impulse current: 65A
Technology: 4Q
Mounting: THT
Kind of package: tube
Features of semiconductor devices: sensitive gate
Produkt ist nicht verfügbar
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BT136-600 BT136-600 WeEn Semiconductors BT136-600.pdf _ween_psg2020.pdf Category: Triacs
Description: Triac; 600V; 4A; TO220AB; Igt: 35/70mA; Ifsm: 25A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: TO220AB
Gate current: 35/70mA
Mounting: THT
Kind of package: tube
Max. forward impulse current: 25A
Features of semiconductor devices: sensitive gate
Technology: 4Q
Produkt ist nicht verfügbar
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BT131-600 BT131-600 WeEn Semiconductors BT131-600.pdf _ween_psg2020.pdf description Category: Triacs
Description: Triac; 600V; 1A; TO92; Igt: 3/7mA; Ifsm: 12.5A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 1A
Case: TO92
Gate current: 3/7mA
Mounting: THT
Kind of package: bulk
Max. forward impulse current: 12.5A
Features of semiconductor devices: sensitive gate
Technology: 4Q
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WNS40H100CBJ WNS40H100CBJ WeEn Semiconductors WNS40H100CB.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 100V; 20Ax2; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 20A x2
Semiconductor structure: common cathode; double
Case: D2PAK
Max. forward voltage: 0.68V
Max. load current: 40A
Max. forward impulse current: 380A
Kind of package: reel; tape
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52+1.38 EUR
96+0.75 EUR
102+0.71 EUR
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NXPSC04650B NXPSC04650B WeEn Semiconductors _ween_psg2020.pdf NXPSC04650B.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SiC; SMD; 650V; 4A; reel,tape
Mounting: SMD
Case: D2PAK
Max. off-state voltage: 650V
Max. load current: 8A
Max. forward voltage: 1.5V
Load current: 4A
Semiconductor structure: single diode
Max. forward impulse current: 24A
Kind of package: reel; tape
Type of diode: Schottky rectifying
Technology: SiC
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WNSC2D04650DJ WNSC2D04650DJ WeEn Semiconductors WNSC2D04650D.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SiC; SMD; 650V; 4A; reel,tape
Technology: SiC
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 24A
Semiconductor structure: single diode
Max. off-state voltage: 650V
Type of diode: Schottky rectifying
Load current: 4A
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WNSC2D04650Q WeEn Semiconductors WNSC2D04650Q.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220AC; Ufmax: 2.2V
Technology: SiC
Case: TO220AC
Mounting: THT
Kind of package: tube
Max. forward impulse current: 24A
Semiconductor structure: single diode
Max. off-state voltage: 650V
Type of diode: Schottky rectifying
Load current: 4A
Max. forward voltage: 2.2V
Max. load current: 8A
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WNSC2D04650TJ WeEn Semiconductors WNSC2D04650T.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN8x8N; SiC; SMD; 650V; 4A; reel,tape
Technology: SiC
Case: DFN8x8N
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 24A
Semiconductor structure: single diode
Max. off-state voltage: 650V
Type of diode: Schottky rectifying
Load current: 4A
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WNSC2D04650XQ WNSC2D04650XQ WeEn Semiconductors Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220FP-2; tube
Technology: SiC
Case: TO220FP-2
Mounting: THT
Kind of package: tube
Max. forward impulse current: 20A
Semiconductor structure: single diode
Max. off-state voltage: 650V
Type of diode: Schottky rectifying
Load current: 4A
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WG40N65DFJQ WeEn Semiconductors Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 15A; 26W; SOT1293,TO3PF
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 15A
Power dissipation: 26W
Case: SOT1293; TO3PF
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 173nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
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BT152B-1200TJ WeEn Semiconductors BT152B-1200T.pdf Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 31A; 20A; Igt: 35mA; D2PAK; SMD; reel,tape
Type of thyristor: thyristor
Max. off-state voltage: 1.2kV
Max. load current: 31A
Load current: 20A
Gate current: 35mA
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 250A
Turn-on time: 2µs
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WG50N65HFW1Q WeEn Semiconductors Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 227W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 227W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 138nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
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WTMH80T16RT WeEn Semiconductors WTMH80T16RT.pdf Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 80A; Ifmax: 125A; TO240AA
Type of module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 80A
Max. load current: 125A
Case: TO240AA
Max. forward voltage: 1.29V
Threshold on-voltage: 0.95V
Max. forward impulse current: 1.4kA
Gate current: 100mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
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5.0SMDJ33CAJ WeEn Semiconductors 5.0SMDJ.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 5kW; 36.7÷40.6V; 93.9A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 5kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 93.9A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: 5.0SMDJ
Leakage current: 1µA
Produkt ist nicht verfügbar
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BT155Z-1200TQ BT155Z-1200TQ WeEn Semiconductors BT155Z-1200T.pdf _ween_psg2020.pdf Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 79A; 50A; Igt: 50mA; SOT1292,TOP3I; THT
Type of thyristor: thyristor
Max. off-state voltage: 1.2kV
Max. load current: 79A
Load current: 50A
Gate current: 50mA
Case: SOT1292; TOP3I
Mounting: THT
Kind of package: tube
Max. forward impulse current: 0.65kA
Turn-on time: 2µs
auf Bestellung 242 Stücke:
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20+3.66 EUR
22+3.29 EUR
29+2.52 EUR
31+2.37 EUR
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WNSC2D021200D6J WeEn Semiconductors WNSC2D021200D6J.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SiC; SMD; 1.2kV; 2A; reel,tape
Technology: SiC
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 26A
Semiconductor structure: single diode
Max. off-state voltage: 1.2kV
Type of diode: Schottky rectifying
Load current: 2A
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WNSC2D051200D6J WeEn Semiconductors WNSC2D051200D6J.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SiC; SMD; 1.2kV; 5A; reel,tape
Technology: SiC
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 45A
Semiconductor structure: single diode
Max. off-state voltage: 1.2kV
Type of diode: Schottky rectifying
Load current: 5A
Max. load current: 10A
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WNSC2D101200D6J WeEn Semiconductors WNSC2D101200D6J.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SiC; SMD; 1.2kV; 10A; reel,tape
Technology: SiC
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 80A
Semiconductor structure: single diode
Max. off-state voltage: 1.2kV
Type of diode: Schottky rectifying
Load current: 10A
Max. load current: 20A
Produkt ist nicht verfügbar
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WNSC2D201200CW6Q WeEn Semiconductors WNSC2D201200CW6Q.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10Ax2; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward impulse current: 80A
Kind of package: tube
Max. load current: 20A
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WSJM65R099DQ WeEn Semiconductors WSJM65R099DQ.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; Idm: 128A; 240W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Pulsed drain current: 128A
Power dissipation: 240W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 99mΩ
Mounting: THT
Gate charge: 57nC
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
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WSJM65R099DTLJ WeEn Semiconductors WSJM65R099DTLJ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 16A; Idm: 100A; 147W; TOLL; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 16A
Pulsed drain current: 100A
Power dissipation: 147W
Case: TOLL
Gate-source voltage: ±30V
On-state resistance: 99mΩ
Mounting: SMD
Gate charge: 57nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
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BT136X-600E/DG,127 WeEn Semiconductors bt136x-600e.pdf Category: Triacs
Description: Triac; 600V; 4A; TO220FP; Igt: 10/25mA; Ifsm: 25A; 4Q; sensitive gate
Case: TO220FP
Mounting: THT
Kind of package: tube
Max. load current: 4A
Gate current: 10/25mA
Max. forward impulse current: 25A
Features of semiconductor devices: sensitive gate
Technology: 4Q
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Produkt ist nicht verfügbar
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MAC97A8/DG,412 WeEn Semiconductors mac97a8.pdf PHGLS28890-1.pdf?t.download=true&u=5oefqw Category: Triacs
Description: Triac; 600V; 0.6A; TO92; Igt: 5/7mA; Ifsm: 8A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 0.6A
Case: TO92
Gate current: 5/7mA
Max. forward impulse current: 8A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: bulk
Produkt ist nicht verfügbar
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BT139-600-0TQ WeEn Semiconductors Category: Triacs
Description: Triac; 600V; 16A; TO220AB; Igt: 50/100mA; Ifsm: 155A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: TO220AB
Gate current: 50/100mA
Max. forward impulse current: 155A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
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BT139-600G0TQ WeEn Semiconductors bt139-600g0t.pdf Category: Triacs
Description: Triac; 600V; 16A; TO220AB; Igt: 50/100mA; Ifsm: 155A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: TO220AB
Gate current: 50/100mA
Max. forward impulse current: 155A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
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BT138-600-0TQ WeEn Semiconductors bt138-600g0t.pdf Category: Triacs
Description: Triac; 600V; 12A; TO220AB; Igt: 50/100mA; Ifsm: 95A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: TO220AB
Gate current: 50/100mA
Mounting: THT
Kind of package: tube
Max. forward impulse current: 95A
Features of semiconductor devices: sensitive gate
Technology: 4Q
Produkt ist nicht verfügbar
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BT138-600/DG,127 WeEn Semiconductors BT138-800.pdf Category: Triacs
Description: Triac; 600V; 12A; TO220AB; Igt: 35/70mA; Ifsm: 95A; 4Q
Case: TO220AB
Mounting: THT
Kind of package: tube
Max. load current: 12A
Gate current: 35/70mA
Max. forward impulse current: 95A
Features of semiconductor devices: sensitive gate
Technology: 4Q
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Produkt ist nicht verfügbar
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BTA208X-600E,127 _ween_psg2020.pdf
BTA208X-600E,127
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 8A; TO220FP; Igt: 10mA; Ifsm: 65A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 8A
Case: TO220FP
Gate current: 10mA
Max. forward impulse current: 65A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
auf Bestellung 965 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
69+1.04 EUR
82+0.88 EUR
159+0.45 EUR
168+0.43 EUR
Mindestbestellmenge: 69
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BTA208X-600F,127 bta208x-600f.pdf
BTA208X-600F,127
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 8A; TO220FP; Igt: 25mA; Ifsm: 65A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 8A
Case: TO220FP
Gate current: 25mA
Max. forward impulse current: 65A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
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BTA312B-600B,118 BTA312B-600B.pdf _ween_psg2020.pdf
BTA312B-600B,118
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 12A; D2PAK; Igt: 50mA; Ifsm: 100A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: D2PAK
Gate current: 50mA
Max. forward impulse current: 100A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
auf Bestellung 329 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
63+1.14 EUR
75+0.97 EUR
122+0.59 EUR
129+0.56 EUR
Mindestbestellmenge: 63
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BTA312B-600C,118 bta312b-600c.pdf
BTA312B-600C,118
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 12A; D2PAK; Igt: 35mA; Ifsm: 100A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: D2PAK
Gate current: 35mA
Max. forward impulse current: 100A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
Produkt ist nicht verfügbar
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BTA312B-600CT,118 BTA312B-600CT.pdf _ween_psg2020.pdf
BTA312B-600CT,118
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 12A; D2PAK; Igt: 35mA; Ifsm: 100A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: D2PAK
Gate current: 35mA
Max. forward impulse current: 100A
Technology: 3Q; Hi-Com
Features of semiconductor devices: high temperature; sensitive gate
Mounting: SMD
Kind of package: reel; tape
auf Bestellung 485 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
49+1.49 EUR
59+1.23 EUR
90+0.80 EUR
95+0.76 EUR
Mindestbestellmenge: 49
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BTA312B-600D,118 _ween_psg2020.pdf
BTA312B-600D,118
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 12A; D2PAK; Igt: 5mA; Ifsm: 100A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: D2PAK
Gate current: 5mA
Max. forward impulse current: 100A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
Produkt ist nicht verfügbar
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BTA312B-600E,118 bta312b-600e.pdf
BTA312B-600E,118
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 12A; D2PAK; Igt: 10mA; Ifsm: 100A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: D2PAK
Gate current: 10mA
Max. forward impulse current: 100A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
Produkt ist nicht verfügbar
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BTA312G-600CTQ _ween_psg2020.pdf
BTA312G-600CTQ
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 12A; I2PAK; Igt: 35mA; Ifsm: 100A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: I2PAK
Gate current: 35mA
Max. forward impulse current: 100A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
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BTA312X-600B,127 bta312x-600b.pdf
BTA312X-600B,127
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 12A; TO220FP; Igt: 50mA; Ifsm: 100A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: TO220FP
Gate current: 50mA
Max. forward impulse current: 100A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
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BTA312X-600C,127 bta312x-600c.pdf
BTA312X-600C,127
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 12A; TO220FP; Igt: 35mA; Ifsm: 100A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: TO220FP
Gate current: 35mA
Max. forward impulse current: 100A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
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BTA312X-600D,127 bta312x-600d.pdf
BTA312X-600D,127
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 12A; TO220FP; Igt: 5mA; Ifsm: 100A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: TO220FP
Gate current: 5mA
Max. forward impulse current: 100A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
auf Bestellung 690 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
58+1.24 EUR
82+0.88 EUR
130+0.55 EUR
138+0.52 EUR
Mindestbestellmenge: 58
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BTA312X-600E,127 BTA312X-600E.pdf _ween_psg2020.pdf
BTA312X-600E,127
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 12A; TO220FP; Igt: 10mA; Ifsm: 100A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: TO220FP
Gate current: 10mA
Max. forward impulse current: 100A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
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BTA312Y-600C,127 bta312y-600c.pdf _ween_psg2020.pdf
BTA312Y-600C,127
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 12A; TO220AB; Igt: 35mA; Ifsm: 100A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: TO220AB
Gate current: 35mA
Max. forward impulse current: 100A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
auf Bestellung 414 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
70+1.03 EUR
83+0.87 EUR
109+0.66 EUR
115+0.62 EUR
250+0.61 EUR
Mindestbestellmenge: 70
Im Einkaufswagen  Stück im Wert von  UAH
BT145-800R,127 bt145-800r.pdf
BT145-800R,127
Hersteller: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 25A; 16A; Igt: 5mA; TO220AB; THT; tube; 2us
Type of thyristor: thyristor
Max. off-state voltage: 0.8kV
Max. load current: 25A
Load current: 16A
Gate current: 5mA
Case: TO220AB
Mounting: THT
Kind of package: tube
Max. forward impulse current: 0.3kA
Turn-on time: 2µs
auf Bestellung 3450 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
40+1.79 EUR
54+1.33 EUR
99+0.73 EUR
105+0.69 EUR
Mindestbestellmenge: 40
Im Einkaufswagen  Stück im Wert von  UAH
BTA208X-800B,127 bta208x-800b.pdf
BTA208X-800B,127
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 8A; TO220FP; Igt: 50mA; Ifsm: 65A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 8A
Case: TO220FP
Gate current: 50mA
Max. forward impulse current: 65A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
auf Bestellung 298 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
93+0.77 EUR
117+0.61 EUR
147+0.49 EUR
155+0.46 EUR
Mindestbestellmenge: 93
Im Einkaufswagen  Stück im Wert von  UAH
BTA208X-800B/L02Q bta208x-800b.pdf
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 8A; TO220FP; Igt: 50mA; Ifsm: 71A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 8A
Case: TO220FP
Gate current: 50mA
Max. forward impulse current: 71A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
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BTA208X-800E,127 _ween_psg2020.pdf
BTA208X-800E,127
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 8A; TO220FP; Igt: 10mA; Ifsm: 65A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 8A
Case: TO220FP
Gate current: 10mA
Max. forward impulse current: 65A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
auf Bestellung 912 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
100+0.72 EUR
115+0.63 EUR
126+0.57 EUR
149+0.48 EUR
157+0.46 EUR
250+0.44 EUR
Mindestbestellmenge: 100
Im Einkaufswagen  Stück im Wert von  UAH
BTA208X-800F,127 bta208x-800f.pdf
BTA208X-800F,127
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 8A; TO220FP; Igt: 25mA; Ifsm: 65A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 8A
Case: TO220FP
Gate current: 25mA
Max. forward impulse current: 65A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
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WNSC2D201200CWQ WNSC2D201200CW.pdf
WNSC2D201200CWQ
Hersteller: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10Ax2; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward impulse current: 72A
Kind of package: tube
Max. load current: 20A
Produkt ist nicht verfügbar
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WNSC2D201200WQ WNSC2D201200W.pdf
WNSC2D201200WQ
Hersteller: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; TO247-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 20A
Semiconductor structure: single diode
Case: TO247-2
Max. forward voltage: 2.1V
Max. forward impulse current: 125A
Kind of package: tube
Produkt ist nicht verfügbar
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BYC10-600CT,127 byc10-600ct.pdf
BYC10-600CT,127
Hersteller: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 5Ax2; tube; Ifsm: 40A; SOT78,TO220AB
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 5A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: superfast switching
Kind of package: tube
Max. forward impulse current: 40A
Case: SOT78; TO220AB
Max. forward voltage: 1.4V
Reverse recovery time: 19ns
Max. load current: 10A
Heatsink thickness: 1.25...1.4mm
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTA225B-600B,118 bta225-800b_0.pdf
BTA225B-600B,118
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 25A; D2PAK; Igt: 50mA; Ifsm: 190A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 25A
Case: D2PAK
Gate current: 50mA
Technology: 3Q; Hi-Com
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: sensitive gate
Max. forward impulse current: 190A
auf Bestellung 4915 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
40+1.80 EUR
48+1.50 EUR
69+1.04 EUR
73+0.99 EUR
Mindestbestellmenge: 40
Im Einkaufswagen  Stück im Wert von  UAH
SMBJ20AJ SMBJ Series.pdf
SMBJ20AJ
Hersteller: WeEn Semiconductors
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 22.41÷24.28V; 18.6A; unidirectional; SMB; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 20V
Breakdown voltage: 22.41...24.28V
Max. forward impulse current: 18.6A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
auf Bestellung 660 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
380+0.19 EUR
620+0.12 EUR
660+0.11 EUR
Mindestbestellmenge: 380
Im Einkaufswagen  Stück im Wert von  UAH
BT158W-1200TQ BT158W-1200T.pdf _ween_psg2020.pdf
BT158W-1200TQ
Hersteller: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 126A; 80A; Igt: 70mA; SOT429,TO247-3; THT
Type of thyristor: thyristor
Max. off-state voltage: 1.2kV
Max. load current: 126A
Load current: 80A
Gate current: 70mA
Case: SOT429; TO247-3
Mounting: THT
Kind of package: tube
Max. forward impulse current: 1.1kA
Turn-on time: 2µs
auf Bestellung 25 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10+7.38 EUR
15+4.92 EUR
16+4.65 EUR
25+4.56 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
BYC10-600PQ BYC10-600P.pdf
BYC10-600PQ
Hersteller: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10A; tube; Ifsm: 150A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 10A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 150A
Case: SOD59; TO220AC
Max. forward voltage: 2V
Reverse recovery time: 18ns
Max. load current: 20A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BT155W-1200T-AQ BT155W-1200T-AQ.pdf _ween_psg2020.pdf
BT155W-1200T-AQ
Hersteller: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 79A; 50A; Igt: 3mA; SOT429,TO247-3; THT
Type of thyristor: thyristor
Max. off-state voltage: 1.2kV
Max. load current: 79A
Load current: 50A
Gate current: 3mA
Case: SOT429; TO247-3
Mounting: THT
Kind of package: tube
Max. forward impulse current: 0.65kA
Turn-on time: 2µs
Application: automotive industry
auf Bestellung 196 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
15+4.85 EUR
24+3.06 EUR
25+2.90 EUR
Mindestbestellmenge: 15
Im Einkaufswagen  Stück im Wert von  UAH
BYV29-500.127 BYV29-500.pdf _ween_psg2020.pdf
BYV29-500.127
Hersteller: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 500V; 9A; tube; Ifsm: 110A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 500V
Load current: 9A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 110A
Case: SOD59; TO220AC
Max. forward voltage: 0.9V
Heatsink thickness: max. 1.3mm
Reverse recovery time: 60ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BT138-800.127 BT138-800.pdf _ween_psg2020.pdf
BT138-800.127
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 12A; TO220AB; Igt: 35/70mA; Ifsm: 95A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 12A
Case: TO220AB
Gate current: 35/70mA
Mounting: THT
Kind of package: tube
Max. forward impulse current: 95A
Features of semiconductor devices: sensitive gate
Technology: 4Q
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BT137-600.127 BT137-600.pdf _ween_psg2020.pdf
BT137-600.127
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 8A; TO220AB; Igt: 35/70mA; Ifsm: 65A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 8A
Case: TO220AB
Gate current: 35/70mA
Max. forward impulse current: 65A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BT137-800.127 BT137-800.pdf _ween_psg2020.pdf
BT137-800.127
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 8A; TO220AB; Igt: 35/70mA; Ifsm: 65A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 8A
Case: TO220AB
Gate current: 35/70mA
Mounting: THT
Kind of package: tube
Max. forward impulse current: 65A
Features of semiconductor devices: sensitive gate
Technology: 4Q
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BT139-600.127 BT139-600.pdf _ween_psg2020.pdf
BT139-600.127
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 16A; TO220AB; Igt: 35/70mA; Ifsm: 155A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: TO220AB
Gate current: 35/70mA
Mounting: THT
Kind of package: tube
Max. forward impulse current: 155A
Features of semiconductor devices: sensitive gate
Technology: 4Q
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BT134-600E.127 BT134-600E.pdf _ween_psg2020.pdf
BT134-600E.127
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 4A; SIP3,SOT82; Igt: 10/25mA; Ifsm: 25A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: SIP3; SOT82
Gate current: 10/25mA
Mounting: THT
Kind of package: tube
Max. forward impulse current: 25A
Features of semiconductor devices: sensitive gate
Technology: 4Q
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WNSC2D151200WQ WNSC2D151200W.pdf
WNSC2D151200WQ
Hersteller: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15A; TO247-2; tube
Technology: SiC
Case: TO247-2
Mounting: THT
Kind of package: tube
Max. forward impulse current: 102A
Semiconductor structure: single diode
Max. off-state voltage: 1.2kV
Type of diode: Schottky rectifying
Load current: 15A
Max. forward voltage: 1.95V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BT137X-800.127 BT137X-800.pdf _ween_psg2020.pdf
BT137X-800.127
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 8A; TO220FP; Igt: 35/70mA; Ifsm: 65A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 8A
Case: TO220FP
Gate current: 35/70mA
Max. forward impulse current: 65A
Technology: 4Q
Mounting: THT
Kind of package: tube
Features of semiconductor devices: sensitive gate
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BT136-600 BT136-600.pdf _ween_psg2020.pdf
BT136-600
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 4A; TO220AB; Igt: 35/70mA; Ifsm: 25A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: TO220AB
Gate current: 35/70mA
Mounting: THT
Kind of package: tube
Max. forward impulse current: 25A
Features of semiconductor devices: sensitive gate
Technology: 4Q
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BT131-600 description BT131-600.pdf _ween_psg2020.pdf
BT131-600
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 1A; TO92; Igt: 3/7mA; Ifsm: 12.5A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 1A
Case: TO92
Gate current: 3/7mA
Mounting: THT
Kind of package: bulk
Max. forward impulse current: 12.5A
Features of semiconductor devices: sensitive gate
Technology: 4Q
Produkt ist nicht verfügbar
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WNS40H100CBJ WNS40H100CB.pdf
WNS40H100CBJ
Hersteller: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 100V; 20Ax2; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 20A x2
Semiconductor structure: common cathode; double
Case: D2PAK
Max. forward voltage: 0.68V
Max. load current: 40A
Max. forward impulse current: 380A
Kind of package: reel; tape
auf Bestellung 160 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
46+1.59 EUR
52+1.38 EUR
96+0.75 EUR
102+0.71 EUR
Mindestbestellmenge: 46
Im Einkaufswagen  Stück im Wert von  UAH
NXPSC04650B _ween_psg2020.pdf NXPSC04650B.pdf
NXPSC04650B
Hersteller: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SiC; SMD; 650V; 4A; reel,tape
Mounting: SMD
Case: D2PAK
Max. off-state voltage: 650V
Max. load current: 8A
Max. forward voltage: 1.5V
Load current: 4A
Semiconductor structure: single diode
Max. forward impulse current: 24A
Kind of package: reel; tape
Type of diode: Schottky rectifying
Technology: SiC
auf Bestellung 11 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
11+6.51 EUR
Mindestbestellmenge: 11
Im Einkaufswagen  Stück im Wert von  UAH
WNSC2D04650DJ WNSC2D04650D.pdf
WNSC2D04650DJ
Hersteller: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SiC; SMD; 650V; 4A; reel,tape
Technology: SiC
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 24A
Semiconductor structure: single diode
Max. off-state voltage: 650V
Type of diode: Schottky rectifying
Load current: 4A
Produkt ist nicht verfügbar
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WNSC2D04650Q WNSC2D04650Q.pdf
Hersteller: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220AC; Ufmax: 2.2V
Technology: SiC
Case: TO220AC
Mounting: THT
Kind of package: tube
Max. forward impulse current: 24A
Semiconductor structure: single diode
Max. off-state voltage: 650V
Type of diode: Schottky rectifying
Load current: 4A
Max. forward voltage: 2.2V
Max. load current: 8A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WNSC2D04650TJ WNSC2D04650T.pdf
Hersteller: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN8x8N; SiC; SMD; 650V; 4A; reel,tape
Technology: SiC
Case: DFN8x8N
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 24A
Semiconductor structure: single diode
Max. off-state voltage: 650V
Type of diode: Schottky rectifying
Load current: 4A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WNSC2D04650XQ
WNSC2D04650XQ
Hersteller: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220FP-2; tube
Technology: SiC
Case: TO220FP-2
Mounting: THT
Kind of package: tube
Max. forward impulse current: 20A
Semiconductor structure: single diode
Max. off-state voltage: 650V
Type of diode: Schottky rectifying
Load current: 4A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WG40N65DFJQ
Hersteller: WeEn Semiconductors
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 15A; 26W; SOT1293,TO3PF
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 15A
Power dissipation: 26W
Case: SOT1293; TO3PF
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 173nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
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BT152B-1200TJ BT152B-1200T.pdf
Hersteller: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 31A; 20A; Igt: 35mA; D2PAK; SMD; reel,tape
Type of thyristor: thyristor
Max. off-state voltage: 1.2kV
Max. load current: 31A
Load current: 20A
Gate current: 35mA
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 250A
Turn-on time: 2µs
Produkt ist nicht verfügbar
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WG50N65HFW1Q
Hersteller: WeEn Semiconductors
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 227W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 227W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 138nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WTMH80T16RT WTMH80T16RT.pdf
Hersteller: WeEn Semiconductors
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 80A; Ifmax: 125A; TO240AA
Type of module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 80A
Max. load current: 125A
Case: TO240AA
Max. forward voltage: 1.29V
Threshold on-voltage: 0.95V
Max. forward impulse current: 1.4kA
Gate current: 100mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
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5.0SMDJ33CAJ 5.0SMDJ.pdf
Hersteller: WeEn Semiconductors
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 5kW; 36.7÷40.6V; 93.9A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 5kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 93.9A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: 5.0SMDJ
Leakage current: 1µA
Produkt ist nicht verfügbar
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BT155Z-1200TQ BT155Z-1200T.pdf _ween_psg2020.pdf
BT155Z-1200TQ
Hersteller: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 79A; 50A; Igt: 50mA; SOT1292,TOP3I; THT
Type of thyristor: thyristor
Max. off-state voltage: 1.2kV
Max. load current: 79A
Load current: 50A
Gate current: 50mA
Case: SOT1292; TOP3I
Mounting: THT
Kind of package: tube
Max. forward impulse current: 0.65kA
Turn-on time: 2µs
auf Bestellung 242 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
20+3.66 EUR
22+3.29 EUR
29+2.52 EUR
31+2.37 EUR
Mindestbestellmenge: 20
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WNSC2D021200D6J WNSC2D021200D6J.pdf
Hersteller: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SiC; SMD; 1.2kV; 2A; reel,tape
Technology: SiC
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 26A
Semiconductor structure: single diode
Max. off-state voltage: 1.2kV
Type of diode: Schottky rectifying
Load current: 2A
Produkt ist nicht verfügbar
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WNSC2D051200D6J WNSC2D051200D6J.pdf
Hersteller: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SiC; SMD; 1.2kV; 5A; reel,tape
Technology: SiC
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 45A
Semiconductor structure: single diode
Max. off-state voltage: 1.2kV
Type of diode: Schottky rectifying
Load current: 5A
Max. load current: 10A
Produkt ist nicht verfügbar
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WNSC2D101200D6J WNSC2D101200D6J.pdf
Hersteller: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SiC; SMD; 1.2kV; 10A; reel,tape
Technology: SiC
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 80A
Semiconductor structure: single diode
Max. off-state voltage: 1.2kV
Type of diode: Schottky rectifying
Load current: 10A
Max. load current: 20A
Produkt ist nicht verfügbar
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WNSC2D201200CW6Q WNSC2D201200CW6Q.pdf
Hersteller: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10Ax2; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward impulse current: 80A
Kind of package: tube
Max. load current: 20A
Produkt ist nicht verfügbar
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WSJM65R099DQ WSJM65R099DQ.pdf
Hersteller: WeEn Semiconductors
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; Idm: 128A; 240W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Pulsed drain current: 128A
Power dissipation: 240W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 99mΩ
Mounting: THT
Gate charge: 57nC
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
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WSJM65R099DTLJ WSJM65R099DTLJ.pdf
Hersteller: WeEn Semiconductors
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 16A; Idm: 100A; 147W; TOLL; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 16A
Pulsed drain current: 100A
Power dissipation: 147W
Case: TOLL
Gate-source voltage: ±30V
On-state resistance: 99mΩ
Mounting: SMD
Gate charge: 57nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
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BT136X-600E/DG,127 bt136x-600e.pdf
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 4A; TO220FP; Igt: 10/25mA; Ifsm: 25A; 4Q; sensitive gate
Case: TO220FP
Mounting: THT
Kind of package: tube
Max. load current: 4A
Gate current: 10/25mA
Max. forward impulse current: 25A
Features of semiconductor devices: sensitive gate
Technology: 4Q
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Produkt ist nicht verfügbar
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MAC97A8/DG,412 mac97a8.pdf PHGLS28890-1.pdf?t.download=true&u=5oefqw
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 0.6A; TO92; Igt: 5/7mA; Ifsm: 8A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 0.6A
Case: TO92
Gate current: 5/7mA
Max. forward impulse current: 8A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: bulk
Produkt ist nicht verfügbar
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BT139-600-0TQ
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 16A; TO220AB; Igt: 50/100mA; Ifsm: 155A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: TO220AB
Gate current: 50/100mA
Max. forward impulse current: 155A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
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BT139-600G0TQ bt139-600g0t.pdf
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 16A; TO220AB; Igt: 50/100mA; Ifsm: 155A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: TO220AB
Gate current: 50/100mA
Max. forward impulse current: 155A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
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BT138-600-0TQ bt138-600g0t.pdf
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 12A; TO220AB; Igt: 50/100mA; Ifsm: 95A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: TO220AB
Gate current: 50/100mA
Mounting: THT
Kind of package: tube
Max. forward impulse current: 95A
Features of semiconductor devices: sensitive gate
Technology: 4Q
Produkt ist nicht verfügbar
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BT138-600/DG,127 BT138-800.pdf
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 12A; TO220AB; Igt: 35/70mA; Ifsm: 95A; 4Q
Case: TO220AB
Mounting: THT
Kind of package: tube
Max. load current: 12A
Gate current: 35/70mA
Max. forward impulse current: 95A
Features of semiconductor devices: sensitive gate
Technology: 4Q
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Produkt ist nicht verfügbar
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