Produkte > WEEN SEMICONDUCTORS > Alle Produkte des Herstellers WEEN SEMICONDUCTORS (5928) > Seite 99 nach 99
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||
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TYN16-600CT,127 | WeEn Semiconductors |
 Category: SMD/THT thyristorsDescription: Thyristor; 600V; Ifmax: 16A; 10.2A; Igt: 15mA; TO220AB; THT; tube Type of thyristor: thyristor Max. off-state voltage: 0.6kV Max. load current: 16A Load current: 10.2A Gate current: 15mA Case: TO220AB Mounting: THT Kind of package: tube Max. forward impulse current: 198A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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TYN16-600RTQ | WeEn Semiconductors |
Category: SMD/THT thyristors Description: Thyristor; 600V; Ifmax: 16A; 10.2A; Igt: 25mA; TO220AB; THT; tube Type of thyristor: thyristor Max. off-state voltage: 0.6kV Max. load current: 16A Load current: 10.2A Gate current: 25mA Case: TO220AB Mounting: THT Kind of package: tube Max. forward impulse current: 231A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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MUR440J | WeEn Semiconductors |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 400V; 4A; 75ns; SMC; Ufmax: 1.25V; Ifsm: 140A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.4kV Load current: 4A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Max. forward impulse current: 140A Case: SMC Kind of package: reel; tape Max. forward voltage: 1.25V Reverse recovery time: 75ns |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 12000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||
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BYV29X-600,127 | WeEn Semiconductors |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 9A; Ifsm: 100A; SOD113,TO220FP-2; tube Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 9A Semiconductor structure: single diode Max. forward impulse current: 100A Case: SOD113; TO220FP-2 Kind of package: tube Max. forward voltage: 1.11V Reverse recovery time: 60ns |
auf Bestellung 436 Stücke: Lieferzeit 14-21 Tag (e) |
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BYV29X-500,127 | WeEn Semiconductors |
Category: THT universal diodes Description: Diode: rectifying; THT; 500V; 9A; Ifsm: 100A; SOD113,TO220FP-2; tube Type of diode: rectifying Mounting: THT Max. off-state voltage: 500V Load current: 9A Semiconductor structure: single diode Max. forward impulse current: 100A Case: SOD113; TO220FP-2 Kind of package: tube Max. forward voltage: 1.11V Reverse recovery time: 60ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
| WNSC6D40650CW-A6Q | WeEn Semiconductors |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 20Ax2; TO247-3; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 20A x2 Semiconductor structure: common cathode; double Case: TO247-3 Max. load current: 40A Max. forward impulse current: 140A Kind of package: tube Application: automotive industry |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 600 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||
| WNSC6D40650CW6Q | WeEn Semiconductors |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 20Ax2; TO247-3; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 20A x2 Semiconductor structure: common cathode; double Case: TO247-3 Max. load current: 40A Max. forward impulse current: 170A Kind of package: tube |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 240 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||
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BTA208X-800B,127 | WeEn Semiconductors |
Category: Triacs Description: Triac; 800V; 8A; TO220FP; Igt: 50mA; Ifsm: 65A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 8A Case: TO220FP Gate current: 50mA Max. forward impulse current: 65A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||
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BTA208-800F,127 | WeEn Semiconductors |
Category: Triacs Description: Triac; 800V; 8A; TO220AB; Igt: 25mA; Ifsm: 65A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 8A Case: TO220AB Gate current: 25mA Max. forward impulse current: 65A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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BTA208X-800B/L02Q | WeEn Semiconductors |
Category: Triacs Description: Triac; 800V; 8A; TO220FP; Igt: 50mA; Ifsm: 71A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 8A Case: TO220FP Gate current: 50mA Max. forward impulse current: 71A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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BTA208-600F,127 | WeEn Semiconductors |
Category: Triacs Description: Triac; 600V; 8A; TO220AB; Igt: 25mA; Ifsm: 65A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 8A Case: TO220AB Gate current: 25mA Max. forward impulse current: 65A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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BTA208-800B/DG,127 | WeEn Semiconductors |
Category: Triacs Description: Triac; 800V; 8A; TO220AB; Igt: 50mA; Ifsm: 65A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 8A Case: TO220AB Gate current: 50mA Max. forward impulse current: 65A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||
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BTA208-800B/L01,12 | WeEn Semiconductors |
Category: Triacs Description: Triac; 800V; 8A; TO220AB; Igt: 50mA; Ifsm: 71A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 8A Case: TO220AB Gate current: 50mA Max. forward impulse current: 71A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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BTA208S-600D,118 | WeEn Semiconductors |
Category: Triacs Description: Triac; 600V; 8A; DPAK; Igt: 5mA; Ifsm: 65A; 3Q,Hi-Com; sensitive gate Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 8A Case: DPAK Gate current: 5mA Max. forward impulse current: 65A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: SMD Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||
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BTA208S-800B,118 | WeEn Semiconductors |
Category: Triacs Description: Triac; 800V; 8A; D2PAK; Igt: 50mA; Ifsm: 65A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 8A Case: D2PAK Gate current: 50mA Max. forward impulse current: 65A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: SMD Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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BTA208S-800F,118 | WeEn Semiconductors |
Category: Triacs Description: Triac; 800V; 8A; DPAK; Igt: 25mA; Ifsm: 65A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 8A Case: DPAK Gate current: 25mA Max. forward impulse current: 65A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: SMD Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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BTA208X-600D,127 | WeEn Semiconductors |
Category: Triacs Description: Triac; 600V; 8A; TO220FP; Igt: 5mA; Ifsm: 65A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 8A Case: TO220FP Gate current: 5mA Max. forward impulse current: 65A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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BTA208X-600F,127 | WeEn Semiconductors |
Category: Triacs Description: Triac; 600V; 8A; TO220FP; Igt: 25mA; Ifsm: 65A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 8A Case: TO220FP Gate current: 25mA Max. forward impulse current: 65A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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BTA208X-800F,127 | WeEn Semiconductors |
Category: Triacs Description: Triac; 800V; 8A; TO220FP; Igt: 25mA; Ifsm: 65A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 8A Case: TO220FP Gate current: 25mA Max. forward impulse current: 65A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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NCR100Q-6MX | WeEn Semiconductors |
Category: SMD/THT thyristors Description: Thyristor; 600V; Ifmax: 0.8A; 0.51A; Igt: 100uA; SOT89; SMD; Ifsm: 9A Case: SOT89 Mounting: SMD Kind of package: reel; tape Max. off-state voltage: 0.6kV Turn-on time: 2µs Load current: 0.51A Max. load current: 0.8A Type of thyristor: thyristor Max. forward impulse current: 9A Gate current: 100µA |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||
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ESDAHD712BE2X | WeEn Semiconductors |
Category: Protection diodes - arrays Description: Diode: TVS array; 7.5÷13.3V; 19A; 500W; asymmetric,bidirectional Type of diode: TVS array Breakdown voltage: 7.5...13.3V Max. forward impulse current: 19A Peak pulse power dissipation: 0.5kW Semiconductor structure: asymmetric; bidirectional Version: ESD Mounting: SMD Case: SOT23 Max. off-state voltage: 7...12V Leakage current: 1µA Number of channels: 2 Manufacturer series: HD Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 90000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||
| WNSC2M75120R6Q | WeEn Semiconductors |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 38.1A; Idm: 100A; 366W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 38.1A Pulsed drain current: 100A Power dissipation: 366W Case: TO247-4 Gate-source voltage: -4...18V On-state resistance: 0.105Ω Mounting: THT Gate charge: 62nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 240 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||
| WNSC2M75120W6Q | WeEn Semiconductors |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 30.3A; Idm: 80A; 231W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 30.3A Pulsed drain current: 80A Power dissipation: 231W Case: TO247-3 Gate-source voltage: -4...18V On-state resistance: 0.105Ω Mounting: THT Gate charge: 62nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 600 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||
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WNSC2D101200D6J | WeEn Semiconductors |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; DPAK; SiC; SMD; 1.2kV; 10A; reel,tape Type of diode: Schottky rectifying Case: DPAK Technology: SiC Mounting: SMD Max. off-state voltage: 1.2kV Load current: 10A Semiconductor structure: single diode Max. forward voltage: 1.6V Max. load current: 20A Max. forward impulse current: 80A Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||
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ESDALD12BCX | WeEn Semiconductors |
Category: Protection diodes - arrays Description: Diode: TVS array; 13.3V; 10A; 350W; bidirectional; ESD; SOD323; Ch: 1 Manufacturer series: LD Mounting: SMD Breakdown voltage: 13.3V Max. forward impulse current: 10A Peak pulse power dissipation: 0.35kW Version: ESD Max. off-state voltage: 12V Kind of package: reel; tape Semiconductor structure: bidirectional Leakage current: 1µA Case: SOD323 Type of diode: TVS array Number of channels: 1 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 90000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||
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BT151U-650C,127 | WeEn Semiconductors |
Category: SMD/THT thyristors Description: Thyristor; 650V; Ifmax: 12A; 7.5A; Igt: 2mA; IPAK; THT; tube; 2us Type of thyristor: thyristor Max. off-state voltage: 650V Max. load current: 12A Load current: 7.5A Gate current: 2mA Case: IPAK Mounting: THT Kind of package: tube Max. forward impulse current: 100A Turn-on time: 2µs |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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BT151X-650LTNQ | WeEn Semiconductors |
Category: SMD/THT thyristors Description: Thyristor; 650V; Ifmax: 12A; 7.5A; Igt: 5mA; TO220FP; THT; tube; 2us Type of thyristor: thyristor Max. off-state voltage: 650V Max. load current: 12A Load current: 7.5A Gate current: 5mA Case: TO220FP Mounting: THT Kind of package: tube Max. forward impulse current: 120A Turn-on time: 2µs |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||
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BT151X-650R,127 | WeEn Semiconductors |
Category: SMD/THT thyristors Description: Thyristor; 650V; Ifmax: 12A; 7.5A; Igt: 2mA; TO220FP; THT; tube; 2us Type of thyristor: thyristor Max. off-state voltage: 650V Max. load current: 12A Load current: 7.5A Gate current: 2mA Case: TO220FP Mounting: THT Kind of package: tube Max. forward impulse current: 120A Turn-on time: 2µs |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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NXPSC04650X6Q | WeEn Semiconductors |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220FP-2; tube Mounting: THT Max. forward impulse current: 24A Max. forward voltage: 1.7V Technology: SiC Max. off-state voltage: 650V Load current: 4A Kind of package: tube Semiconductor structure: single diode Case: TO220FP-2 Type of diode: Schottky rectifying |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||
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NXPSC06650X6Q | WeEn Semiconductors |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; TO220FP-2; tube Mounting: THT Max. forward impulse current: 36A Max. forward voltage: 1.7V Technology: SiC Max. off-state voltage: 650V Load current: 6A Kind of package: tube Semiconductor structure: single diode Case: TO220FP-2 Type of diode: Schottky rectifying |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||
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NXPSC08650X6Q | WeEn Semiconductors |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220FP-2; tube Mounting: THT Max. forward impulse current: 48A Max. forward voltage: 1.7V Technology: SiC Max. off-state voltage: 650V Load current: 8A Kind of package: tube Semiconductor structure: single diode Case: TO220FP-2 Type of diode: Schottky rectifying |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||
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NXPSC10650X6Q | WeEn Semiconductors |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220FP-2; tube Mounting: THT Max. forward impulse current: 50A Max. forward voltage: 1.7V Technology: SiC Max. off-state voltage: 650V Load current: 10A Kind of package: tube Semiconductor structure: single diode Case: TO220FP-2 Type of diode: Schottky rectifying |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||
| WNSC5D10650X6Q | WeEn Semiconductors |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220FP-2; tube Mounting: THT Max. forward impulse current: 50A Max. forward voltage: 1.7V Technology: SiC Max. off-state voltage: 650V Load current: 10A Max. load current: 20A Kind of package: tube Semiconductor structure: single diode Case: TO220FP-2 Type of diode: Schottky rectifying |
Produkt ist nicht verfügbar |
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| WNSC6D10650X6Q | WeEn Semiconductors |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220FP-2; tube Mounting: THT Max. forward impulse current: 75A Technology: SiC Max. off-state voltage: 650V Load current: 10A Max. load current: 20A Kind of package: tube Semiconductor structure: single diode Case: TO220FP-2 Type of diode: Schottky rectifying |
Produkt ist nicht verfügbar |
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| WNSC5D08650X6Q | WeEn Semiconductors |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220FP-2; tube Mounting: THT Max. forward impulse current: 40A Max. forward voltage: 1.7V Technology: SiC Max. off-state voltage: 650V Load current: 8A Max. load current: 16A Kind of package: tube Semiconductor structure: single diode Case: TO220FP-2 Type of diode: Schottky rectifying |
Produkt ist nicht verfügbar |
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| BTA45-800BQ | WeEn Semiconductors |
Category: Triacs Description: Triac; 800V; 45A; SOT1292,TO3P; Igt: 50mA; Ifsm: 495A; 4Q Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 45A Gate current: 50mA Case: SOT1292; TO3P Mounting: THT Kind of package: tube Max. forward impulse current: 495A Technology: 4Q Features of semiconductor devices: high temperature |
Produkt ist nicht verfügbar |
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| TYN40Y-800TQ | WeEn Semiconductors |
Category: SMD/THT thyristors Description: Thyristor; 800V; Ifmax: 40A; 25A; Igt: 15mA; SOT78D; THT; tube; 2us Type of thyristor: thyristor Max. off-state voltage: 0.8kV Max. load current: 40A Load current: 25A Gate current: 15mA Case: SOT78D Mounting: THT Kind of package: tube Max. forward impulse current: 495A Turn-on time: 2µs |
Produkt ist nicht verfügbar |
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TYN40-800TQ | WeEn Semiconductors |
Category: SMD/THT thyristors Description: Thyristor; 800V; Ifmax: 40A; 25A; Igt: 15mA; TO220AB; THT; tube; 2us Type of thyristor: thyristor Max. off-state voltage: 0.8kV Max. load current: 40A Load current: 25A Gate current: 15mA Case: TO220AB Mounting: THT Kind of package: tube Max. forward impulse current: 495A Turn-on time: 2µs |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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BYV29-600,127 | WeEn Semiconductors |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 9A; Ifsm: 77A; SOD59,TO220AC; tube Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 9A Semiconductor structure: single diode Max. forward impulse current: 77A Case: SOD59; TO220AC Kind of package: tube Max. forward voltage: 1.45V Reverse recovery time: 60ns |
auf Bestellung 900 Stücke: Lieferzeit 14-21 Tag (e) |
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BYV29FX-600,127 | WeEn Semiconductors |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 9A; Ifsm: 100A; SOD113,TO220FP-2; tube Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 9A Semiconductor structure: single diode Max. forward impulse current: 100A Case: SOD113; TO220FP-2 Kind of package: tube Max. forward voltage: 1.25V Reverse recovery time: 35ns Features of semiconductor devices: ultrafast switching |
Produkt ist nicht verfügbar |
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BYV29B-500,118 | WeEn Semiconductors |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 500V; 9A; 60ns; D2PAK,SOT404; Ufmax: 1.45V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 500V Load current: 9A Semiconductor structure: single diode Max. forward impulse current: 77A Case: D2PAK; SOT404 Kind of package: reel; tape Max. forward voltage: 1.45V Reverse recovery time: 60ns Features of semiconductor devices: ultrafast switching |
Produkt ist nicht verfügbar |
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BYV29B-600,118 | WeEn Semiconductors |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 600V; 9A; 60ns; D2PAK,SOT404; Ufmax: 1.45V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Load current: 9A Semiconductor structure: single diode Max. forward impulse current: 77A Case: D2PAK; SOT404 Kind of package: reel; tape Max. forward voltage: 1.45V Reverse recovery time: 60ns Features of semiconductor devices: ultrafast switching |
Produkt ist nicht verfügbar |
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BYV29B-600PJ | WeEn Semiconductors |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 600V; 9A; 75ns; D2PAK,SOT404; Ufmax: 1.3V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Load current: 9A Semiconductor structure: single diode Max. forward impulse current: 120A Case: D2PAK; SOT404 Kind of package: reel; tape Max. forward voltage: 1.3V Reverse recovery time: 75ns Features of semiconductor devices: ultrafast switching Max. load current: 18A |
Produkt ist nicht verfügbar |
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BYV29D-600PJ | WeEn Semiconductors |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 600V; 9A; DPAK; Ufmax: 0.9V; Ifsm: 120A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Load current: 9A Semiconductor structure: single diode Max. forward impulse current: 120A Case: DPAK Kind of package: reel; tape Max. forward voltage: 0.9V Features of semiconductor devices: ultrafast switching |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 7500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||
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BYV29F-600,127 | WeEn Semiconductors |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 9A; Ifsm: 100A; SOD59,TO220AC; tube Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 9A Semiconductor structure: single diode Max. forward impulse current: 100A Case: SOD59; TO220AC Kind of package: tube Max. forward voltage: 1.7V Reverse recovery time: 35ns |
Produkt ist nicht verfügbar |
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BYV29FB-600,118 | WeEn Semiconductors |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 600V; 9A; 35ns; D2PAK,SOT404; Ufmax: 1.25V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Load current: 9A Semiconductor structure: single diode Max. forward impulse current: 100A Case: D2PAK; SOT404 Kind of package: reel; tape Max. forward voltage: 1.25V Reverse recovery time: 35ns Features of semiconductor devices: ultrafast switching |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5600 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||
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BYV29FD-600,118 | WeEn Semiconductors |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 600V; 9A; 35ns; DPAK; Ufmax: 1.25V; Ifsm: 91A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Load current: 9A Semiconductor structure: single diode Max. forward impulse current: 91A Case: DPAK Kind of package: reel; tape Max. forward voltage: 1.25V Reverse recovery time: 35ns Features of semiconductor devices: ultrafast switching |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||
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BYV29G-600,127 | WeEn Semiconductors |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 9A; Ifsm: 77A; I2PAK; tube; Ufmax: 1.45V Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 9A Semiconductor structure: single diode Max. forward impulse current: 77A Case: I2PAK Kind of package: tube Max. forward voltage: 1.45V Reverse recovery time: 60ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| TYN16-600CT,127 |
|
Hersteller: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 16A; 10.2A; Igt: 15mA; TO220AB; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 0.6kV
Max. load current: 16A
Load current: 10.2A
Gate current: 15mA
Case: TO220AB
Mounting: THT
Kind of package: tube
Max. forward impulse current: 198A
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 16A; 10.2A; Igt: 15mA; TO220AB; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 0.6kV
Max. load current: 16A
Load current: 10.2A
Gate current: 15mA
Case: TO220AB
Mounting: THT
Kind of package: tube
Max. forward impulse current: 198A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TYN16-600RTQ |
|
Hersteller: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 16A; 10.2A; Igt: 25mA; TO220AB; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 0.6kV
Max. load current: 16A
Load current: 10.2A
Gate current: 25mA
Case: TO220AB
Mounting: THT
Kind of package: tube
Max. forward impulse current: 231A
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 16A; 10.2A; Igt: 25mA; TO220AB; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 0.6kV
Max. load current: 16A
Load current: 10.2A
Gate current: 25mA
Case: TO220AB
Mounting: THT
Kind of package: tube
Max. forward impulse current: 231A
Produkt ist nicht verfügbar
Im Einkaufswagen
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| MUR440J |
|
Hersteller: WeEn Semiconductors
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 4A; 75ns; SMC; Ufmax: 1.25V; Ifsm: 140A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 4A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 140A
Case: SMC
Kind of package: reel; tape
Max. forward voltage: 1.25V
Reverse recovery time: 75ns
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 4A; 75ns; SMC; Ufmax: 1.25V; Ifsm: 140A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 4A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 140A
Case: SMC
Kind of package: reel; tape
Max. forward voltage: 1.25V
Reverse recovery time: 75ns
Produkt ist nicht verfügbar
Mindestbestellmenge: 12000 Stücke
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| BYV29X-600,127 |
|
Hersteller: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 9A; Ifsm: 100A; SOD113,TO220FP-2; tube
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 9A
Semiconductor structure: single diode
Max. forward impulse current: 100A
Case: SOD113; TO220FP-2
Kind of package: tube
Max. forward voltage: 1.11V
Reverse recovery time: 60ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 9A; Ifsm: 100A; SOD113,TO220FP-2; tube
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 9A
Semiconductor structure: single diode
Max. forward impulse current: 100A
Case: SOD113; TO220FP-2
Kind of package: tube
Max. forward voltage: 1.11V
Reverse recovery time: 60ns
auf Bestellung 436 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 74+ | 1.15 EUR |
| 101+ | 0.84 EUR |
| 128+ | 0.67 EUR |
| 143+ | 0.6 EUR |
| BYV29X-500,127 |
|
Hersteller: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 500V; 9A; Ifsm: 100A; SOD113,TO220FP-2; tube
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 500V
Load current: 9A
Semiconductor structure: single diode
Max. forward impulse current: 100A
Case: SOD113; TO220FP-2
Kind of package: tube
Max. forward voltage: 1.11V
Reverse recovery time: 60ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 500V; 9A; Ifsm: 100A; SOD113,TO220FP-2; tube
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 500V
Load current: 9A
Semiconductor structure: single diode
Max. forward impulse current: 100A
Case: SOD113; TO220FP-2
Kind of package: tube
Max. forward voltage: 1.11V
Reverse recovery time: 60ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| WNSC6D40650CW-A6Q |
|
Hersteller: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20Ax2; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. load current: 40A
Max. forward impulse current: 140A
Kind of package: tube
Application: automotive industry
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20Ax2; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. load current: 40A
Max. forward impulse current: 140A
Kind of package: tube
Application: automotive industry
Produkt ist nicht verfügbar
Mindestbestellmenge: 600 Stücke
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| WNSC6D40650CW6Q |
|
Hersteller: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20Ax2; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. load current: 40A
Max. forward impulse current: 170A
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20Ax2; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. load current: 40A
Max. forward impulse current: 170A
Kind of package: tube
Produkt ist nicht verfügbar
Mindestbestellmenge: 240 Stücke
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| BTA208X-800B,127 |
|
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 8A; TO220FP; Igt: 50mA; Ifsm: 65A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 8A
Case: TO220FP
Gate current: 50mA
Max. forward impulse current: 65A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 800V; 8A; TO220FP; Igt: 50mA; Ifsm: 65A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 8A
Case: TO220FP
Gate current: 50mA
Max. forward impulse current: 65A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
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| BTA208-800F,127 |
|
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 8A; TO220AB; Igt: 25mA; Ifsm: 65A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 8A
Case: TO220AB
Gate current: 25mA
Max. forward impulse current: 65A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 800V; 8A; TO220AB; Igt: 25mA; Ifsm: 65A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 8A
Case: TO220AB
Gate current: 25mA
Max. forward impulse current: 65A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BTA208X-800B/L02Q |
|
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 8A; TO220FP; Igt: 50mA; Ifsm: 71A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 8A
Case: TO220FP
Gate current: 50mA
Max. forward impulse current: 71A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 800V; 8A; TO220FP; Igt: 50mA; Ifsm: 71A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 8A
Case: TO220FP
Gate current: 50mA
Max. forward impulse current: 71A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BTA208-600F,127 |
|
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 8A; TO220AB; Igt: 25mA; Ifsm: 65A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 8A
Case: TO220AB
Gate current: 25mA
Max. forward impulse current: 65A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 600V; 8A; TO220AB; Igt: 25mA; Ifsm: 65A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 8A
Case: TO220AB
Gate current: 25mA
Max. forward impulse current: 65A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BTA208-800B/DG,127 |
|
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 8A; TO220AB; Igt: 50mA; Ifsm: 65A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 8A
Case: TO220AB
Gate current: 50mA
Max. forward impulse current: 65A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 800V; 8A; TO220AB; Igt: 50mA; Ifsm: 65A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 8A
Case: TO220AB
Gate current: 50mA
Max. forward impulse current: 65A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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| BTA208-800B/L01,12 |
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 8A; TO220AB; Igt: 50mA; Ifsm: 71A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 8A
Case: TO220AB
Gate current: 50mA
Max. forward impulse current: 71A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 800V; 8A; TO220AB; Igt: 50mA; Ifsm: 71A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 8A
Case: TO220AB
Gate current: 50mA
Max. forward impulse current: 71A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BTA208S-600D,118 |
|
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 8A; DPAK; Igt: 5mA; Ifsm: 65A; 3Q,Hi-Com; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 8A
Case: DPAK
Gate current: 5mA
Max. forward impulse current: 65A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
Category: Triacs
Description: Triac; 600V; 8A; DPAK; Igt: 5mA; Ifsm: 65A; 3Q,Hi-Com; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 8A
Case: DPAK
Gate current: 5mA
Max. forward impulse current: 65A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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Stück im Wert von UAH
| BTA208S-800B,118 |
|
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 8A; D2PAK; Igt: 50mA; Ifsm: 65A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 8A
Case: D2PAK
Gate current: 50mA
Max. forward impulse current: 65A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
Category: Triacs
Description: Triac; 800V; 8A; D2PAK; Igt: 50mA; Ifsm: 65A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 8A
Case: D2PAK
Gate current: 50mA
Max. forward impulse current: 65A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BTA208S-800F,118 |
|
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 8A; DPAK; Igt: 25mA; Ifsm: 65A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 8A
Case: DPAK
Gate current: 25mA
Max. forward impulse current: 65A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
Category: Triacs
Description: Triac; 800V; 8A; DPAK; Igt: 25mA; Ifsm: 65A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 8A
Case: DPAK
Gate current: 25mA
Max. forward impulse current: 65A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BTA208X-600D,127 |
|
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 8A; TO220FP; Igt: 5mA; Ifsm: 65A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 8A
Case: TO220FP
Gate current: 5mA
Max. forward impulse current: 65A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 600V; 8A; TO220FP; Igt: 5mA; Ifsm: 65A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 8A
Case: TO220FP
Gate current: 5mA
Max. forward impulse current: 65A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BTA208X-600F,127 |
|
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 8A; TO220FP; Igt: 25mA; Ifsm: 65A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 8A
Case: TO220FP
Gate current: 25mA
Max. forward impulse current: 65A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 600V; 8A; TO220FP; Igt: 25mA; Ifsm: 65A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 8A
Case: TO220FP
Gate current: 25mA
Max. forward impulse current: 65A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BTA208X-800F,127 |
|
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 8A; TO220FP; Igt: 25mA; Ifsm: 65A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 8A
Case: TO220FP
Gate current: 25mA
Max. forward impulse current: 65A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 800V; 8A; TO220FP; Igt: 25mA; Ifsm: 65A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 8A
Case: TO220FP
Gate current: 25mA
Max. forward impulse current: 65A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NCR100Q-6MX |
|
Hersteller: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 0.8A; 0.51A; Igt: 100uA; SOT89; SMD; Ifsm: 9A
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Max. off-state voltage: 0.6kV
Turn-on time: 2µs
Load current: 0.51A
Max. load current: 0.8A
Type of thyristor: thyristor
Max. forward impulse current: 9A
Gate current: 100µA
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 0.8A; 0.51A; Igt: 100uA; SOT89; SMD; Ifsm: 9A
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Max. off-state voltage: 0.6kV
Turn-on time: 2µs
Load current: 0.51A
Max. load current: 0.8A
Type of thyristor: thyristor
Max. forward impulse current: 9A
Gate current: 100µA
Produkt ist nicht verfügbar
Mindestbestellmenge: 5 Stücke
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Stück im Wert von UAH
| ESDAHD712BE2X |
|
Hersteller: WeEn Semiconductors
Category: Protection diodes - arrays
Description: Diode: TVS array; 7.5÷13.3V; 19A; 500W; asymmetric,bidirectional
Type of diode: TVS array
Breakdown voltage: 7.5...13.3V
Max. forward impulse current: 19A
Peak pulse power dissipation: 0.5kW
Semiconductor structure: asymmetric; bidirectional
Version: ESD
Mounting: SMD
Case: SOT23
Max. off-state voltage: 7...12V
Leakage current: 1µA
Number of channels: 2
Manufacturer series: HD
Kind of package: reel; tape
Category: Protection diodes - arrays
Description: Diode: TVS array; 7.5÷13.3V; 19A; 500W; asymmetric,bidirectional
Type of diode: TVS array
Breakdown voltage: 7.5...13.3V
Max. forward impulse current: 19A
Peak pulse power dissipation: 0.5kW
Semiconductor structure: asymmetric; bidirectional
Version: ESD
Mounting: SMD
Case: SOT23
Max. off-state voltage: 7...12V
Leakage current: 1µA
Number of channels: 2
Manufacturer series: HD
Kind of package: reel; tape
Produkt ist nicht verfügbar
Mindestbestellmenge: 90000 Stücke
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| WNSC2M75120R6Q |
|
Hersteller: WeEn Semiconductors
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 38.1A; Idm: 100A; 366W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 38.1A
Pulsed drain current: 100A
Power dissipation: 366W
Case: TO247-4
Gate-source voltage: -4...18V
On-state resistance: 0.105Ω
Mounting: THT
Gate charge: 62nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 38.1A; Idm: 100A; 366W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 38.1A
Pulsed drain current: 100A
Power dissipation: 366W
Case: TO247-4
Gate-source voltage: -4...18V
On-state resistance: 0.105Ω
Mounting: THT
Gate charge: 62nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Produkt ist nicht verfügbar
Mindestbestellmenge: 240 Stücke
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| WNSC2M75120W6Q |
|
Hersteller: WeEn Semiconductors
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 30.3A; Idm: 80A; 231W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 30.3A
Pulsed drain current: 80A
Power dissipation: 231W
Case: TO247-3
Gate-source voltage: -4...18V
On-state resistance: 0.105Ω
Mounting: THT
Gate charge: 62nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 30.3A; Idm: 80A; 231W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 30.3A
Pulsed drain current: 80A
Power dissipation: 231W
Case: TO247-3
Gate-source voltage: -4...18V
On-state resistance: 0.105Ω
Mounting: THT
Gate charge: 62nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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| WNSC2D101200D6J |
|
Hersteller: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SiC; SMD; 1.2kV; 10A; reel,tape
Type of diode: Schottky rectifying
Case: DPAK
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 1.6V
Max. load current: 20A
Max. forward impulse current: 80A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SiC; SMD; 1.2kV; 10A; reel,tape
Type of diode: Schottky rectifying
Case: DPAK
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 1.6V
Max. load current: 20A
Max. forward impulse current: 80A
Kind of package: reel; tape
Produkt ist nicht verfügbar
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| ESDALD12BCX |
|
Hersteller: WeEn Semiconductors
Category: Protection diodes - arrays
Description: Diode: TVS array; 13.3V; 10A; 350W; bidirectional; ESD; SOD323; Ch: 1
Manufacturer series: LD
Mounting: SMD
Breakdown voltage: 13.3V
Max. forward impulse current: 10A
Peak pulse power dissipation: 0.35kW
Version: ESD
Max. off-state voltage: 12V
Kind of package: reel; tape
Semiconductor structure: bidirectional
Leakage current: 1µA
Case: SOD323
Type of diode: TVS array
Number of channels: 1
Category: Protection diodes - arrays
Description: Diode: TVS array; 13.3V; 10A; 350W; bidirectional; ESD; SOD323; Ch: 1
Manufacturer series: LD
Mounting: SMD
Breakdown voltage: 13.3V
Max. forward impulse current: 10A
Peak pulse power dissipation: 0.35kW
Version: ESD
Max. off-state voltage: 12V
Kind of package: reel; tape
Semiconductor structure: bidirectional
Leakage current: 1µA
Case: SOD323
Type of diode: TVS array
Number of channels: 1
Produkt ist nicht verfügbar
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| BT151U-650C,127 |
|
Hersteller: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 650V; Ifmax: 12A; 7.5A; Igt: 2mA; IPAK; THT; tube; 2us
Type of thyristor: thyristor
Max. off-state voltage: 650V
Max. load current: 12A
Load current: 7.5A
Gate current: 2mA
Case: IPAK
Mounting: THT
Kind of package: tube
Max. forward impulse current: 100A
Turn-on time: 2µs
Category: SMD/THT thyristors
Description: Thyristor; 650V; Ifmax: 12A; 7.5A; Igt: 2mA; IPAK; THT; tube; 2us
Type of thyristor: thyristor
Max. off-state voltage: 650V
Max. load current: 12A
Load current: 7.5A
Gate current: 2mA
Case: IPAK
Mounting: THT
Kind of package: tube
Max. forward impulse current: 100A
Turn-on time: 2µs
Produkt ist nicht verfügbar
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| BT151X-650LTNQ |
|
Hersteller: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 650V; Ifmax: 12A; 7.5A; Igt: 5mA; TO220FP; THT; tube; 2us
Type of thyristor: thyristor
Max. off-state voltage: 650V
Max. load current: 12A
Load current: 7.5A
Gate current: 5mA
Case: TO220FP
Mounting: THT
Kind of package: tube
Max. forward impulse current: 120A
Turn-on time: 2µs
Category: SMD/THT thyristors
Description: Thyristor; 650V; Ifmax: 12A; 7.5A; Igt: 5mA; TO220FP; THT; tube; 2us
Type of thyristor: thyristor
Max. off-state voltage: 650V
Max. load current: 12A
Load current: 7.5A
Gate current: 5mA
Case: TO220FP
Mounting: THT
Kind of package: tube
Max. forward impulse current: 120A
Turn-on time: 2µs
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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| BT151X-650R,127 |
|
Hersteller: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 650V; Ifmax: 12A; 7.5A; Igt: 2mA; TO220FP; THT; tube; 2us
Type of thyristor: thyristor
Max. off-state voltage: 650V
Max. load current: 12A
Load current: 7.5A
Gate current: 2mA
Case: TO220FP
Mounting: THT
Kind of package: tube
Max. forward impulse current: 120A
Turn-on time: 2µs
Category: SMD/THT thyristors
Description: Thyristor; 650V; Ifmax: 12A; 7.5A; Igt: 2mA; TO220FP; THT; tube; 2us
Type of thyristor: thyristor
Max. off-state voltage: 650V
Max. load current: 12A
Load current: 7.5A
Gate current: 2mA
Case: TO220FP
Mounting: THT
Kind of package: tube
Max. forward impulse current: 120A
Turn-on time: 2µs
Produkt ist nicht verfügbar
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| NXPSC04650X6Q |
|
Hersteller: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220FP-2; tube
Mounting: THT
Max. forward impulse current: 24A
Max. forward voltage: 1.7V
Technology: SiC
Max. off-state voltage: 650V
Load current: 4A
Kind of package: tube
Semiconductor structure: single diode
Case: TO220FP-2
Type of diode: Schottky rectifying
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220FP-2; tube
Mounting: THT
Max. forward impulse current: 24A
Max. forward voltage: 1.7V
Technology: SiC
Max. off-state voltage: 650V
Load current: 4A
Kind of package: tube
Semiconductor structure: single diode
Case: TO220FP-2
Type of diode: Schottky rectifying
Produkt ist nicht verfügbar
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| NXPSC06650X6Q |
|
Hersteller: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; TO220FP-2; tube
Mounting: THT
Max. forward impulse current: 36A
Max. forward voltage: 1.7V
Technology: SiC
Max. off-state voltage: 650V
Load current: 6A
Kind of package: tube
Semiconductor structure: single diode
Case: TO220FP-2
Type of diode: Schottky rectifying
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; TO220FP-2; tube
Mounting: THT
Max. forward impulse current: 36A
Max. forward voltage: 1.7V
Technology: SiC
Max. off-state voltage: 650V
Load current: 6A
Kind of package: tube
Semiconductor structure: single diode
Case: TO220FP-2
Type of diode: Schottky rectifying
Produkt ist nicht verfügbar
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| NXPSC08650X6Q |
|
Hersteller: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220FP-2; tube
Mounting: THT
Max. forward impulse current: 48A
Max. forward voltage: 1.7V
Technology: SiC
Max. off-state voltage: 650V
Load current: 8A
Kind of package: tube
Semiconductor structure: single diode
Case: TO220FP-2
Type of diode: Schottky rectifying
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220FP-2; tube
Mounting: THT
Max. forward impulse current: 48A
Max. forward voltage: 1.7V
Technology: SiC
Max. off-state voltage: 650V
Load current: 8A
Kind of package: tube
Semiconductor structure: single diode
Case: TO220FP-2
Type of diode: Schottky rectifying
Produkt ist nicht verfügbar
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| NXPSC10650X6Q |
|
Hersteller: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220FP-2; tube
Mounting: THT
Max. forward impulse current: 50A
Max. forward voltage: 1.7V
Technology: SiC
Max. off-state voltage: 650V
Load current: 10A
Kind of package: tube
Semiconductor structure: single diode
Case: TO220FP-2
Type of diode: Schottky rectifying
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220FP-2; tube
Mounting: THT
Max. forward impulse current: 50A
Max. forward voltage: 1.7V
Technology: SiC
Max. off-state voltage: 650V
Load current: 10A
Kind of package: tube
Semiconductor structure: single diode
Case: TO220FP-2
Type of diode: Schottky rectifying
Produkt ist nicht verfügbar
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| WNSC5D10650X6Q |
|
Hersteller: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220FP-2; tube
Mounting: THT
Max. forward impulse current: 50A
Max. forward voltage: 1.7V
Technology: SiC
Max. off-state voltage: 650V
Load current: 10A
Max. load current: 20A
Kind of package: tube
Semiconductor structure: single diode
Case: TO220FP-2
Type of diode: Schottky rectifying
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220FP-2; tube
Mounting: THT
Max. forward impulse current: 50A
Max. forward voltage: 1.7V
Technology: SiC
Max. off-state voltage: 650V
Load current: 10A
Max. load current: 20A
Kind of package: tube
Semiconductor structure: single diode
Case: TO220FP-2
Type of diode: Schottky rectifying
Produkt ist nicht verfügbar
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| WNSC6D10650X6Q |
|
Hersteller: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220FP-2; tube
Mounting: THT
Max. forward impulse current: 75A
Technology: SiC
Max. off-state voltage: 650V
Load current: 10A
Max. load current: 20A
Kind of package: tube
Semiconductor structure: single diode
Case: TO220FP-2
Type of diode: Schottky rectifying
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220FP-2; tube
Mounting: THT
Max. forward impulse current: 75A
Technology: SiC
Max. off-state voltage: 650V
Load current: 10A
Max. load current: 20A
Kind of package: tube
Semiconductor structure: single diode
Case: TO220FP-2
Type of diode: Schottky rectifying
Produkt ist nicht verfügbar
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| WNSC5D08650X6Q |
|
Hersteller: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220FP-2; tube
Mounting: THT
Max. forward impulse current: 40A
Max. forward voltage: 1.7V
Technology: SiC
Max. off-state voltage: 650V
Load current: 8A
Max. load current: 16A
Kind of package: tube
Semiconductor structure: single diode
Case: TO220FP-2
Type of diode: Schottky rectifying
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220FP-2; tube
Mounting: THT
Max. forward impulse current: 40A
Max. forward voltage: 1.7V
Technology: SiC
Max. off-state voltage: 650V
Load current: 8A
Max. load current: 16A
Kind of package: tube
Semiconductor structure: single diode
Case: TO220FP-2
Type of diode: Schottky rectifying
Produkt ist nicht verfügbar
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| BTA45-800BQ |
|
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 45A; SOT1292,TO3P; Igt: 50mA; Ifsm: 495A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 45A
Gate current: 50mA
Case: SOT1292; TO3P
Mounting: THT
Kind of package: tube
Max. forward impulse current: 495A
Technology: 4Q
Features of semiconductor devices: high temperature
Category: Triacs
Description: Triac; 800V; 45A; SOT1292,TO3P; Igt: 50mA; Ifsm: 495A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 45A
Gate current: 50mA
Case: SOT1292; TO3P
Mounting: THT
Kind of package: tube
Max. forward impulse current: 495A
Technology: 4Q
Features of semiconductor devices: high temperature
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| TYN40Y-800TQ |
|
Hersteller: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 40A; 25A; Igt: 15mA; SOT78D; THT; tube; 2us
Type of thyristor: thyristor
Max. off-state voltage: 0.8kV
Max. load current: 40A
Load current: 25A
Gate current: 15mA
Case: SOT78D
Mounting: THT
Kind of package: tube
Max. forward impulse current: 495A
Turn-on time: 2µs
Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 40A; 25A; Igt: 15mA; SOT78D; THT; tube; 2us
Type of thyristor: thyristor
Max. off-state voltage: 0.8kV
Max. load current: 40A
Load current: 25A
Gate current: 15mA
Case: SOT78D
Mounting: THT
Kind of package: tube
Max. forward impulse current: 495A
Turn-on time: 2µs
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| TYN40-800TQ |
|
Hersteller: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 40A; 25A; Igt: 15mA; TO220AB; THT; tube; 2us
Type of thyristor: thyristor
Max. off-state voltage: 0.8kV
Max. load current: 40A
Load current: 25A
Gate current: 15mA
Case: TO220AB
Mounting: THT
Kind of package: tube
Max. forward impulse current: 495A
Turn-on time: 2µs
Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 40A; 25A; Igt: 15mA; TO220AB; THT; tube; 2us
Type of thyristor: thyristor
Max. off-state voltage: 0.8kV
Max. load current: 40A
Load current: 25A
Gate current: 15mA
Case: TO220AB
Mounting: THT
Kind of package: tube
Max. forward impulse current: 495A
Turn-on time: 2µs
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| BYV29-600,127 |
|
Hersteller: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 9A; Ifsm: 77A; SOD59,TO220AC; tube
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 9A
Semiconductor structure: single diode
Max. forward impulse current: 77A
Case: SOD59; TO220AC
Kind of package: tube
Max. forward voltage: 1.45V
Reverse recovery time: 60ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 9A; Ifsm: 77A; SOD59,TO220AC; tube
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 9A
Semiconductor structure: single diode
Max. forward impulse current: 77A
Case: SOD59; TO220AC
Kind of package: tube
Max. forward voltage: 1.45V
Reverse recovery time: 60ns
auf Bestellung 900 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 88+ | 0.98 EUR |
| 128+ | 0.67 EUR |
| 141+ | 0.61 EUR |
| 500+ | 0.48 EUR |
| BYV29FX-600,127 |
|
Hersteller: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 9A; Ifsm: 100A; SOD113,TO220FP-2; tube
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 9A
Semiconductor structure: single diode
Max. forward impulse current: 100A
Case: SOD113; TO220FP-2
Kind of package: tube
Max. forward voltage: 1.25V
Reverse recovery time: 35ns
Features of semiconductor devices: ultrafast switching
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 9A; Ifsm: 100A; SOD113,TO220FP-2; tube
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 9A
Semiconductor structure: single diode
Max. forward impulse current: 100A
Case: SOD113; TO220FP-2
Kind of package: tube
Max. forward voltage: 1.25V
Reverse recovery time: 35ns
Features of semiconductor devices: ultrafast switching
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| BYV29B-500,118 |
|
Hersteller: WeEn Semiconductors
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 500V; 9A; 60ns; D2PAK,SOT404; Ufmax: 1.45V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 500V
Load current: 9A
Semiconductor structure: single diode
Max. forward impulse current: 77A
Case: D2PAK; SOT404
Kind of package: reel; tape
Max. forward voltage: 1.45V
Reverse recovery time: 60ns
Features of semiconductor devices: ultrafast switching
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 500V; 9A; 60ns; D2PAK,SOT404; Ufmax: 1.45V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 500V
Load current: 9A
Semiconductor structure: single diode
Max. forward impulse current: 77A
Case: D2PAK; SOT404
Kind of package: reel; tape
Max. forward voltage: 1.45V
Reverse recovery time: 60ns
Features of semiconductor devices: ultrafast switching
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| BYV29B-600,118 |
|
Hersteller: WeEn Semiconductors
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 9A; 60ns; D2PAK,SOT404; Ufmax: 1.45V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 9A
Semiconductor structure: single diode
Max. forward impulse current: 77A
Case: D2PAK; SOT404
Kind of package: reel; tape
Max. forward voltage: 1.45V
Reverse recovery time: 60ns
Features of semiconductor devices: ultrafast switching
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 9A; 60ns; D2PAK,SOT404; Ufmax: 1.45V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 9A
Semiconductor structure: single diode
Max. forward impulse current: 77A
Case: D2PAK; SOT404
Kind of package: reel; tape
Max. forward voltage: 1.45V
Reverse recovery time: 60ns
Features of semiconductor devices: ultrafast switching
Produkt ist nicht verfügbar
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| BYV29B-600PJ |
|
Hersteller: WeEn Semiconductors
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 9A; 75ns; D2PAK,SOT404; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 9A
Semiconductor structure: single diode
Max. forward impulse current: 120A
Case: D2PAK; SOT404
Kind of package: reel; tape
Max. forward voltage: 1.3V
Reverse recovery time: 75ns
Features of semiconductor devices: ultrafast switching
Max. load current: 18A
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 9A; 75ns; D2PAK,SOT404; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 9A
Semiconductor structure: single diode
Max. forward impulse current: 120A
Case: D2PAK; SOT404
Kind of package: reel; tape
Max. forward voltage: 1.3V
Reverse recovery time: 75ns
Features of semiconductor devices: ultrafast switching
Max. load current: 18A
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| BYV29D-600PJ |
|
Hersteller: WeEn Semiconductors
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 9A; DPAK; Ufmax: 0.9V; Ifsm: 120A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 9A
Semiconductor structure: single diode
Max. forward impulse current: 120A
Case: DPAK
Kind of package: reel; tape
Max. forward voltage: 0.9V
Features of semiconductor devices: ultrafast switching
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 9A; DPAK; Ufmax: 0.9V; Ifsm: 120A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 9A
Semiconductor structure: single diode
Max. forward impulse current: 120A
Case: DPAK
Kind of package: reel; tape
Max. forward voltage: 0.9V
Features of semiconductor devices: ultrafast switching
Produkt ist nicht verfügbar
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| BYV29F-600,127 |
|
Hersteller: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 9A; Ifsm: 100A; SOD59,TO220AC; tube
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 9A
Semiconductor structure: single diode
Max. forward impulse current: 100A
Case: SOD59; TO220AC
Kind of package: tube
Max. forward voltage: 1.7V
Reverse recovery time: 35ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 9A; Ifsm: 100A; SOD59,TO220AC; tube
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 9A
Semiconductor structure: single diode
Max. forward impulse current: 100A
Case: SOD59; TO220AC
Kind of package: tube
Max. forward voltage: 1.7V
Reverse recovery time: 35ns
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| BYV29FB-600,118 |
|
Hersteller: WeEn Semiconductors
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 9A; 35ns; D2PAK,SOT404; Ufmax: 1.25V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 9A
Semiconductor structure: single diode
Max. forward impulse current: 100A
Case: D2PAK; SOT404
Kind of package: reel; tape
Max. forward voltage: 1.25V
Reverse recovery time: 35ns
Features of semiconductor devices: ultrafast switching
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 9A; 35ns; D2PAK,SOT404; Ufmax: 1.25V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 9A
Semiconductor structure: single diode
Max. forward impulse current: 100A
Case: D2PAK; SOT404
Kind of package: reel; tape
Max. forward voltage: 1.25V
Reverse recovery time: 35ns
Features of semiconductor devices: ultrafast switching
Produkt ist nicht verfügbar
Mindestbestellmenge: 5600 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| BYV29FD-600,118 |
|
Hersteller: WeEn Semiconductors
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 9A; 35ns; DPAK; Ufmax: 1.25V; Ifsm: 91A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 9A
Semiconductor structure: single diode
Max. forward impulse current: 91A
Case: DPAK
Kind of package: reel; tape
Max. forward voltage: 1.25V
Reverse recovery time: 35ns
Features of semiconductor devices: ultrafast switching
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 9A; 35ns; DPAK; Ufmax: 1.25V; Ifsm: 91A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 9A
Semiconductor structure: single diode
Max. forward impulse current: 91A
Case: DPAK
Kind of package: reel; tape
Max. forward voltage: 1.25V
Reverse recovery time: 35ns
Features of semiconductor devices: ultrafast switching
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| BYV29G-600,127 |
|
Hersteller: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 9A; Ifsm: 77A; I2PAK; tube; Ufmax: 1.45V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 9A
Semiconductor structure: single diode
Max. forward impulse current: 77A
Case: I2PAK
Kind of package: tube
Max. forward voltage: 1.45V
Reverse recovery time: 60ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 9A; Ifsm: 77A; I2PAK; tube; Ufmax: 1.45V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 9A
Semiconductor structure: single diode
Max. forward impulse current: 77A
Case: I2PAK
Kind of package: tube
Max. forward voltage: 1.45V
Reverse recovery time: 60ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH