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BTA308X-800C0,127 WeEn Semiconductors BTA308X-800C0.pdf Category: Triacs
Description: Triac; 800V; 8A; TO220FP; Igt: 35mA; Ifsm: 60A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 8A
Case: TO220FP
Gate current: 35mA
Max. forward impulse current: 60A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
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BTA308X-800ETQ WeEn Semiconductors bta308x-800et.pdf Category: Triacs
Description: Triac; 800V; 8A; TO220FP; Igt: 10mA; Ifsm: 60A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 8A
Case: TO220FP
Gate current: 10mA
Max. forward impulse current: 60A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
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BTA308Y-800ETQ WeEn Semiconductors Category: Triacs
Description: Triac; 800V; 8A; TO220AB; Igt: 10mA; Ifsm: 60A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 8A
Case: TO220AB
Gate current: 10mA
Max. forward impulse current: 60A
Technology: 3Q; Hi-Com
Features of semiconductor devices: high temperature; sensitive gate
Mounting: THT
Kind of package: tube
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EC103D1,412 EC103D1,412 WeEn Semiconductors ec103d1.pdf Category: SMD/THT thyristors
Description: Thyristor; 400V; Ifmax: 0.8A; 0.5A; Igt: 3uA; TO92; THT; bulk; Ifsm: 8A
Type of thyristor: thyristor
Max. off-state voltage: 0.4kV
Max. load current: 0.8A
Case: TO92
Gate current: 3µA
Mounting: THT
Kind of package: bulk
Turn-on time: 2µs
Load current: 0.5A
Max. forward impulse current: 8A
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NXPSC20650W-AQ NXPSC20650W-AQ WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BD966C7F256F00C4&compId=NXPSC20650W-A.pdf?ci_sign=20d85f3b6247735c1014ed552b4f98afc9550616 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36 Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 2.1V
Max. load current: 20A
Max. forward impulse current: 50A
Kind of package: tube
Application: automotive industry
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WNSC6D20650B6J WeEn Semiconductors pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDB8D17A394A7D00D4&compId=WNSC6D20650B6J.pdf?ci_sign=e887b72159ebcc12ef90526e0b821b321656f1e8 Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SiC; SMD; 650V; 20A; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 20A
Semiconductor structure: single diode
Case: D2PAK
Max. forward voltage: 1.8V
Max. forward impulse current: 120A
Kind of package: reel; tape
Max. load current: 40A
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WNSC6D20650WQ WNSC6D20650WQ WeEn Semiconductors WNSC6D20650W.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO247-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A
Semiconductor structure: single diode
Case: TO247-2
Max. forward voltage: 1.4V
Max. forward impulse current: 155A
Kind of package: tube
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BYV32E-300PQ BYV32E-300PQ WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BD95B955CDB060C4&compId=BYV32E-300P.pdf?ci_sign=f7f7fbbc6a96b744d3417cbff690b8631c544806 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36 Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 10Ax2; tube; Ifsm: 220A; SOT78,TO220AB
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 300V
Load current: 10A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 220A
Case: SOT78; TO220AB
Max. forward voltage: 1.25V
Max. load current: 20A
Reverse recovery time: 25ns
Heatsink thickness: 1.25...1.4mm
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BYV32EB-200PJ BYV32EB-200PJ WeEn Semiconductors byv32eb-200p.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 10Ax2; 25ns; D2PAK,SOT404; Ifsm: 125A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 10A x2
Reverse recovery time: 25ns
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Case: D2PAK; SOT404
Max. forward voltage: 0.85V
Max. load current: 20A
Max. forward impulse current: 125A
Kind of package: reel; tape
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BYV32EB-300PJ BYV32EB-300PJ WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BD963EBC3DB120C4&compId=BYV32EB-300P.pdf?ci_sign=44df4d4918ee7b2325f3c599d4aeb56c9a415f47 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36 Category: SMD universal diodes
Description: Diode: rectifying; SMD; 300V; 10Ax2; 25ns; D2PAK,SOT404; Ifsm: 220A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 300V
Load current: 10A x2
Reverse recovery time: 25ns
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Case: D2PAK; SOT404
Max. forward voltage: 1.25V
Max. load current: 20A
Max. forward impulse current: 220A
Kind of package: reel; tape
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BYV32EX-300PQ BYV32EX-300PQ WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BD964B10D38520C4&compId=BYV32EX-300P.pdf?ci_sign=4968244df9558922ddf562afb67bf6717b590dab pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36 Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 10Ax2; tube; Ifsm: 220A; Ufmax: 1.25V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 300V
Load current: 10A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 220A
Case: SOD113; TO220FP-2
Max. forward voltage: 1.25V
Max. load current: 20A
Reverse recovery time: 25ns
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WNSCM80120R6Q WeEn Semiconductors WNSCM80120R6Q.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 32A; Idm: 81A; 270W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 32A
Pulsed drain current: 81A
Power dissipation: 270W
Case: TO247-4
Gate-source voltage: -10...25V
On-state resistance: 0.11Ω
Mounting: THT
Gate charge: 59nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
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ACTT2S-800E,118 ACTT2S-800E,118 WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB752F1ED782E2D21B5FD0A259&compId=ACTT2S-800E.pdf?ci_sign=02805e9f71d4f8934a828b81c1963bcf8997af54 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36 Category: Thyristors - others
Description: Thyristor: AC switch; 800V; Ifmax: 2A; Igt: 10mA; DPAK; SMD
Type of thyristor: AC switch
Max. off-state voltage: 0.8kV
Max. load current: 2A
Gate current: 10mA
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
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BYC15M-650PQ WeEn Semiconductors pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDB8D1A321A22E40D4&compId=BYC15M-650PQ.pdf?ci_sign=869c7ba9e5bdd3ffa845f971cb4579e130bee32b Category: THT universal diodes
Description: Diode: rectifying; THT; 650V; 15A; tube; Ifsm: 180A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 650V
Load current: 15A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 180A
Case: SOD59; TO220AC
Max. forward voltage: 2.3V
Reverse recovery time: 14ns
Max. load current: 30A
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P1KSMBJ68CAJ WeEn Semiconductors pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDB8E603AA2ACDE0D4&compId=P1KSMBJ.pdf?ci_sign=79a0fcbcbecb0d0af3b500b9296556ffc543ba48 Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1kW; 68V; 10.9A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1kW
Max. off-state voltage: 58.1V
Breakdown voltage: 68V
Max. forward impulse current: 10.9A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P1KSMBJ
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SMDJ40AJ WeEn Semiconductors pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDB8E74FCDD7F0E0D4&compId=SMDJ%20Series.pdf?ci_sign=a6572f21ae2ae1b136361c5522d6aa7958ae3b4e Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 44.8÷48.8V; 46.5A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 40V
Breakdown voltage: 44.8...48.8V
Max. forward impulse current: 46.5A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMDJ
Kind of package: reel; tape
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BT155W-1400TQ WeEn Semiconductors BT155W-1400T.pdf Category: SMD/THT thyristors
Description: Thyristor; 1.4kV; Ifmax: 79A; 50A; Igt: 50mA; SOT429,TO247-3; THT
Type of thyristor: thyristor
Max. off-state voltage: 1.4kV
Max. load current: 79A
Load current: 50A
Gate current: 50mA
Case: SOT429; TO247-3
Mounting: THT
Kind of package: tube
Max. forward impulse current: 715A
Turn-on time: 2µs
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SM8S43CAJ WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB281E1EDE90C9DCF8552600D5&compId=SM8S_ser.pdf?ci_sign=de6efedc7b1a0f20d98cf269f0efb7ba8d77acec Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 6.6kW; 47.8÷52.8V; 95.1A; bidirectional; DO218J; SM8S
Type of diode: TVS
Peak pulse power dissipation: 6.6kW
Max. off-state voltage: 43V
Breakdown voltage: 47.8...52.8V
Max. forward impulse current: 95.1A
Semiconductor structure: bidirectional
Case: DO218J
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Manufacturer series: SM8S
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ESDALD18BCX ESDALD18BCX WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB90B41EDC8ACDE1F9962920C8&compId=ESDALD18BC.pdf?ci_sign=a3f9bf3ae87dd08c8348e01ebd9b9c22cd5da5aa Category: Protection diodes - arrays
Description: Diode: TVS array; 19V; 8A; 350W; bidirectional; SOD323; Ch: 1; LD; ESD
Type of diode: TVS array
Peak pulse power dissipation: 0.35kW
Max. off-state voltage: 18V
Breakdown voltage: 19V
Max. forward impulse current: 8A
Semiconductor structure: bidirectional
Mounting: SMD
Leakage current: 1µA
Number of channels: 1
Kind of package: reel; tape
Version: ESD
Case: SOD323
Manufacturer series: LD
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ESDALD12BCX ESDALD12BCX WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB90B41EDC8ACDD98BB2B100C8&compId=ESDALDxxBC.pdf?ci_sign=25186217f24567f8ce5688ca1a3a95f9c307be81 Category: Protection diodes - arrays
Description: Diode: TVS array; 13.3V; 10A; 350W; bidirectional; SOD323; Ch: 1
Manufacturer series: LD
Version: ESD
Mounting: SMD
Kind of package: reel; tape
Type of diode: TVS array
Application: universal
Leakage current: 1µA
Number of channels: 1
Max. off-state voltage: 12V
Max. forward impulse current: 10A
Breakdown voltage: 13.3V
Peak pulse power dissipation: 0.35kW
Case: SOD323
Semiconductor structure: bidirectional
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P6SMBJ64CAJ WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB281E1EDF93CADF9A40DCA0D6&compId=P6SMBJ.pdf?ci_sign=549054d3bd78afb23b6bad8a4db93bf1e0463454 Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 71.6÷78V; 5.9A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 64V
Breakdown voltage: 71.6...78V
Max. forward impulse current: 5.9A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
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BTA204-800E.127 BTA204-800E.127 WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB752F1ED7829264EE0CC9C259&compId=BTA204-800E.pdf?ci_sign=4094da1a392bee596b128267c8e14d4ba3fdf09c pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36 Category: Triacs
Description: Triac; 800V; 4A; TO220AB; Igt: 10mA; Ifsm: 25A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 4A
Case: TO220AB
Gate current: 10mA
Max. forward impulse current: 25A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
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WSJM65R170XQ WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB281E1EDF93E36C1BA78960D6&compId=WSJM65R170XQ.pdf?ci_sign=5747ac009b72ff18769d17f6f7dcfe2f9d093752 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 14A; Idm: 72A; 36W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 14A
Pulsed drain current: 72A
Power dissipation: 36W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.17Ω
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhancement
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ACTT2S-800ETNJ WeEn Semiconductors actt2s-800etn.pdf Category: Thyristors - others
Description: Thyristor: AC switch; 800V; Ifmax: 2A; Igt: 10mA; DPAK; SMD
Type of thyristor: AC switch
Max. off-state voltage: 0.8kV
Max. load current: 2A
Gate current: 10mA
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
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ACTT4S-800E,118 ACTT4S-800E,118 WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA8DF1A0DF366A0D3&compId=ACTT4S-800E.pdf?ci_sign=61a3631da004dd589c7e85f1d96b66b298a432c8 Category: Thyristors - others
Description: Thyristor: AC switch; 800V; Ifmax: 4A; Igt: 10mA; DPAK; SMD
Case: DPAK
Mounting: SMD
Type of thyristor: AC switch
Gate current: 10mA
Max. load current: 4A
Max. off-state voltage: 0.8kV
Kind of package: reel; tape
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BYV30B-600PJ BYV30B-600PJ WeEn Semiconductors byv30b-600p.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 30A; 75ns; D2PAK,SOT404; Ufmax: 1.35V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 30A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: D2PAK; SOT404
Max. forward voltage: 1.35V
Max. forward impulse current: 330A
Kind of package: reel; tape
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BYV25F-600,127 BYV25F-600,127 WeEn Semiconductors byv25f-600.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 5A; tube; Ifsm: 66A; SOD59,TO220AC
Mounting: THT
Type of diode: rectifying
Kind of package: tube
Semiconductor structure: single diode
Case: SOD59; TO220AC
Reverse recovery time: 35ns
Load current: 5A
Max. forward voltage: 1.7V
Max. forward impulse current: 66A
Max. off-state voltage: 0.6kV
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BT139-800.127 BT139-800.127 WeEn Semiconductors BT139-800.pdf _ween_psg2020.pdf Category: Triacs
Description: Triac; 800V; 16A; TO220AB; Igt: 35/70mA; Ifsm: 155A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: TO220AB
Gate current: 35/70mA
Mounting: THT
Kind of package: tube
Technology: 4Q
Max. forward impulse current: 155A
Features of semiconductor devices: sensitive gate
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OT412,115 OT412,115 WeEn Semiconductors Category: Triacs
Description: Triac; 1A; SOT223; 4Q; sensitive gate
Type of thyristor: triac
Max. load current: 1A
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Technology: 4Q
Features of semiconductor devices: sensitive gate
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BUJ105A,127 BUJ105A,127 WeEn Semiconductors buj105a.pdf Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 400V; 8A; 80W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 400V
Collector current: 8A
Power dissipation: 80W
Case: TO220AB
Current gain: 13...36
Mounting: THT
Kind of package: tube
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BUJ105AB,118 WeEn Semiconductors buj105ab.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 400V; 8A; 125W; D2PAK
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 400V
Collector current: 8A
Power dissipation: 125W
Case: D2PAK
Current gain: 13...36
Mounting: SMD
Kind of package: reel; tape
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BUJ105AD,118 WeEn Semiconductors buj105ad_1.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 400V; 8A; 80W; DPAK
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 400V
Collector current: 8A
Power dissipation: 80W
Case: DPAK
Current gain: 13...36
Mounting: SMD
Kind of package: reel; tape
Produkt ist nicht verfügbar
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ESDALD15BCX ESDALD15BCX WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB90B41EDC8ACDD98BB2B100C8&compId=ESDALDxxBC.pdf?ci_sign=25186217f24567f8ce5688ca1a3a95f9c307be81 Category: Protection diodes - arrays
Description: Diode: TVS array; 16.5V; 8A; 350W; bidirectional; SOD323; Ch: 1; LD
Manufacturer series: LD
Mounting: SMD
Kind of package: reel; tape
Type of diode: TVS array
Leakage current: 1µA
Number of channels: 1
Max. forward impulse current: 8A
Max. off-state voltage: 15V
Breakdown voltage: 16.5V
Peak pulse power dissipation: 0.35kW
Semiconductor structure: bidirectional
Version: ESD
Case: SOD323
Application: universal
Produkt ist nicht verfügbar
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BYV42EB-200,118 BYV42EB-200,118 WeEn Semiconductors byv42e-200.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 15Ax2; 28ns; D2PAK,SOT404; Ifsm: 160A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 15A x2
Reverse recovery time: 28ns
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Case: D2PAK; SOT404
Max. forward voltage: 0.85V
Max. load current: 30A
Max. forward impulse current: 160A
Kind of package: reel; tape
Produkt ist nicht verfügbar
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ESDALD05BCX ESDALD05BCX WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB90B41EDC8ACDD98BB2B100C8&compId=ESDALDxxBC.pdf?ci_sign=25186217f24567f8ce5688ca1a3a95f9c307be81 Category: Protection diodes - arrays
Description: Diode: TVS array; 6.5V; 15A; 350W; bidirectional; SOD323; Ch: 1; LD
Application: universal
Peak pulse power dissipation: 0.35kW
Case: SOD323
Version: ESD
Manufacturer series: LD
Kind of package: reel; tape
Mounting: SMD
Type of diode: TVS array
Leakage current: 1µA
Number of channels: 1
Max. forward impulse current: 15A
Max. off-state voltage: 5V
Breakdown voltage: 6.5V
Semiconductor structure: bidirectional
Produkt ist nicht verfügbar
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ESDALD05UD4X ESDALD05UD4X WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB90B41EDC8ACDFCCEC63C40C8&compId=ESDALD05UD4.pdf?ci_sign=b98b0c7f6f022c4af3d3487717863fbfdd5a7da9 Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; 5.5A; 88W; unidirectional; SOT23-6; Ch: 4; LD
Application: USB
Peak pulse power dissipation: 88W
Case: SOT23-6
Version: ESD
Manufacturer series: LD
Kind of package: reel; tape
Mounting: SMD
Type of diode: TVS array
Leakage current: 0.1µA
Number of channels: 4
Max. forward impulse current: 5.5A
Max. off-state voltage: 5V
Breakdown voltage: 6V
Semiconductor structure: unidirectional
Produkt ist nicht verfügbar
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ESDALD05UE2X ESDALD05UE2X WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB90B41EDC8ACDFA45227D20C8&compId=ESDALD05UE2.pdf?ci_sign=b7e92811dd2dc190ccd859206b47f21b6806b4d2 Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; 4A; 60W; unidirectional; SOT23-3; Ch: 2; LD; ESD
Application: HDMI; USB
Peak pulse power dissipation: 60W
Case: SOT23-3
Version: ESD
Manufacturer series: LD
Kind of package: reel; tape
Mounting: SMD
Type of diode: TVS array
Leakage current: 0.1µA
Number of channels: 2
Max. forward impulse current: 4A
Max. off-state voltage: 5V
Breakdown voltage: 6V
Semiconductor structure: unidirectional
Produkt ist nicht verfügbar
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ESDALD05UG4X WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB90B41EDC8ACDF63F94FDA0C8&compId=ESDALD05UG4.pdf?ci_sign=7fb6413bc15a8c691660d84c2508478576bffea9 Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; 4A; 60W; unidirectional; DFN2510; Ch: 4; LD; ESD
Application: HDMI; USB
Peak pulse power dissipation: 60W
Case: DFN2510
Version: ESD
Manufacturer series: LD
Kind of package: reel; tape
Mounting: SMD
Type of diode: TVS array
Leakage current: 0.1µA
Number of channels: 4
Max. forward impulse current: 4A
Max. off-state voltage: 5V
Breakdown voltage: 6V
Semiconductor structure: unidirectional
Produkt ist nicht verfügbar
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ESDALD05UJ2X WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB90B41EDC8ACDF39A6C3D20C8&compId=ESDALD05UJ2.pdf?ci_sign=79716f2c4e6b2a09c9a88a15e5b9d3c5ef2bab45 Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; 8A; 136W; unidirectional; SOT143; Ch: 2; LD; ESD
Application: USB
Peak pulse power dissipation: 136W
Case: SOT143
Version: ESD
Manufacturer series: LD
Kind of package: reel; tape
Mounting: SMD
Type of diode: TVS array
Leakage current: 0.1µA
Number of channels: 2
Max. forward impulse current: 8A
Max. off-state voltage: 5V
Breakdown voltage: 6V
Semiconductor structure: unidirectional
Produkt ist nicht verfügbar
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SMDJ30CAJ WeEn Semiconductors pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDB8E74FCDD7F0E0D4&compId=SMDJ%20Series.pdf?ci_sign=a6572f21ae2ae1b136361c5522d6aa7958ae3b4e Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 33.6÷36.59V; 62A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 30V
Breakdown voltage: 33.6...36.59V
Max. forward impulse current: 62A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMDJ
Kind of package: reel; tape
Produkt ist nicht verfügbar
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ESDHD03UFX WeEn Semiconductors ESDHDxxUF%20Series.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 4÷8V; 24A; unidirectional; DFN1006-2; reel,tape; Ch: 1
Mounting: SMD
Kind of package: reel; tape
Type of diode: TVS
Semiconductor structure: unidirectional
Leakage current: 1µA
Number of channels: 1
Max. off-state voltage: 3.3V
Breakdown voltage: 4...8V
Max. forward impulse current: 24A
Manufacturer series: HD
Case: DFN1006-2
Version: ESD
Produkt ist nicht verfügbar
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ESDHD05UFX WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB90B41EDC8ACDF06C0C0FC0C8&compId=ESDHD05UF.pdf?ci_sign=d39c34f5b6400c25b9ee66084c63a1710f545894 Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 320W; 6÷9.5V; 20A; unidirectional; DFN1006-2; reel,tape
Mounting: SMD
Kind of package: reel; tape
Type of diode: TVS
Semiconductor structure: unidirectional
Leakage current: 0.1µA
Number of channels: 1
Max. off-state voltage: 5V
Breakdown voltage: 6...9.5V
Max. forward impulse current: 20A
Manufacturer series: HD
Peak pulse power dissipation: 320W
Case: DFN1006-2
Version: ESD
Produkt ist nicht verfügbar
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WMSC030H12B1P6T WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB281E1EDF93CDE1A264DE80D6&compId=WMSC030H12B1P6T.pdf?ci_sign=1a4928565b4e4a2baa6b6b0a4d9949ba1263e13e Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 53A; Press-in PCB; Idm: 100A
Technology: SiC
Topology: MOSFET half-bridge; NTC thermistor
Type of semiconductor module: MOSFET transistor
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Gate-source voltage: -4...18V
On-state resistance: 30mΩ
Drain current: 53A
Pulsed drain current: 100A
Power dissipation: 111W
Drain-source voltage: 1.2kV
Semiconductor structure: transistor/transistor
Produkt ist nicht verfügbar
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BYC10DX-600,127 BYC10DX-600,127 WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB281E1EDE808A6AC27DCD60D5&compId=BYC10DX-600.pdf?ci_sign=72784e1a88ab44f95d463e89f3beb6ea0768e466 Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10A; tube; Ifsm: 65A; SOD113,TO220FP-2
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 10A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Kind of package: tube
Max. forward impulse current: 65A
Case: SOD113; TO220FP-2
Max. forward voltage: 1.4V
Reverse recovery time: 18ns
auf Bestellung 1002 Stücke:
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117+0.61 EUR
127+0.57 EUR
133+0.54 EUR
143+0.5 EUR
250+0.48 EUR
500+0.47 EUR
Mindestbestellmenge: 90
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BYC10B-600,118 BYC10B-600,118 WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB752F1ED782E2325FB5686259&compId=BYC10B-600.pdf?ci_sign=1fa5f9365fe1328c5d8d593c32875b05c581d6db pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36 Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 10A; 55ns; D2PAK,SOT404; Ufmax: 1.4V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 10A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: reel; tape
Max. forward impulse current: 71A
Case: D2PAK; SOT404
Max. forward voltage: 1.4V
Reverse recovery time: 55ns
auf Bestellung 513 Stücke:
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BYC10X-600,127 BYC10X-600,127 WeEn Semiconductors Discrete%20Selection%20Guide%202011.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10A; tube; Ifsm: 91A; SOD113,TO220FP-2
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 10A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Kind of package: tube
Max. forward impulse current: 91A
Case: SOD113; TO220FP-2
Max. forward voltage: 1.4V
Reverse recovery time: 19ns
Produkt ist nicht verfügbar
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BYC10X-600PQ BYC10X-600PQ WeEn Semiconductors byc10x-600p.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10A; tube; Ifsm: 150A; Ufmax: 1.3V; 19ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 10A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Kind of package: tube
Max. forward impulse current: 150A
Case: SOD113; TO220FP-2
Max. forward voltage: 1.3V
Reverse recovery time: 19ns
Produkt ist nicht verfügbar
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BYC10-600CT,127 BYC10-600CT,127 WeEn Semiconductors byc10-600ct.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 5Ax2; tube; Ifsm: 40A; SOT78,TO220AB
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 5A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: superfast switching
Kind of package: tube
Max. forward impulse current: 40A
Case: SOT78; TO220AB
Max. forward voltage: 1.4V
Reverse recovery time: 19ns
Heatsink thickness: 1.25...1.4mm
Max. load current: 10A
Produkt ist nicht verfügbar
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BYC10-600PQ BYC10-600PQ WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB281E1EDCA7F20CFB45B1E0CE&compId=BYC10-600P.pdf?ci_sign=ada853b3a941e7c83c943836a29a0afe6383e10f Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10A; tube; Ifsm: 150A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 10A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 150A
Case: SOD59; TO220AC
Max. forward voltage: 2V
Reverse recovery time: 18ns
Max. load current: 20A
Produkt ist nicht verfügbar
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BYC100W-1200PQ BYC100W-1200PQ WeEn Semiconductors BYC100W-1200PQ_DS.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 100A; tube; Ifsm: 900A; TO247-2; 115ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 100A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Kind of package: tube
Max. forward impulse current: 0.9kA
Case: TO247-2
Max. forward voltage: 2.2V
Reverse recovery time: 115ns
Produkt ist nicht verfügbar
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BYC10D-600,127 BYC10D-600,127 WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB281E1EDE808A6EC898B540D5&compId=BYC10D-600.pdf?ci_sign=10bfc6fd004b7d73304ce6a3c2c434f15dfbaef6 Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10A; tube; Ifsm: 65A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 10A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Kind of package: tube
Max. forward impulse current: 65A
Case: SOD59; TO220AC
Max. forward voltage: 1.4V
Reverse recovery time: 18ns
Produkt ist nicht verfügbar
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P1KSMBJ68AJ WeEn Semiconductors pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDB8E603AA2ACDE0D4&compId=P1KSMBJ.pdf?ci_sign=79a0fcbcbecb0d0af3b500b9296556ffc543ba48 Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1kW; 68V; 10.9A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1kW
Max. off-state voltage: 58.1V
Breakdown voltage: 68V
Max. forward impulse current: 10.9A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P1KSMBJ
Produkt ist nicht verfügbar
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N0118GA,116 WeEn Semiconductors n0118ga.pdf Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 0.8A; 0.51A; Igt: 7uA; TO92; THT; Ifsm: 9A
Mounting: THT
Type of thyristor: thyristor
Case: TO92
Gate current: 7µA
Load current: 0.51A
Max. load current: 0.8A
Max. forward impulse current: 9A
Max. off-state voltage: 0.6kV
Produkt ist nicht verfügbar
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N0118GA,412 WeEn Semiconductors n0118ga.pdf Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 0.8A; 0.51A; Igt: 7uA; TO92; THT; bulk
Mounting: THT
Type of thyristor: thyristor
Case: TO92
Gate current: 7µA
Load current: 0.51A
Max. load current: 0.8A
Max. forward impulse current: 9A
Max. off-state voltage: 0.6kV
Kind of package: bulk
Produkt ist nicht verfügbar
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N0118GAML WeEn Semiconductors n0118ga.pdf Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 0.8A; 0.51A; Igt: 7uA; TO92; THT; Ifsm: 9A
Mounting: THT
Type of thyristor: thyristor
Case: TO92
Gate current: 7µA
Load current: 0.51A
Max. load current: 0.8A
Max. forward impulse current: 9A
Max. off-state voltage: 0.6kV
Produkt ist nicht verfügbar
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BT153B-1200T-AJ WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BD96D58C7D5840C4&compId=BT153B-1200T-A.pdf?ci_sign=eff89ee9663c312cdc19717d11d6457989dd2210 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36 Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 47A; 30A; Igt: 50mA; D2PAK; SMD; reel,tape
Type of thyristor: thyristor
Max. off-state voltage: 1.2kV
Max. load current: 47A
Load current: 30A
Gate current: 50mA
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 350A
Turn-on time: 2µs
Application: automotive industry
Produkt ist nicht verfügbar
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BT153B-1200TJ WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB281E1EDF93CBBDE9499020D6&compId=BT153B-1200T.pdf?ci_sign=67ab5288c3663ed0afc499b3e531425357b2235b Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 47A; 30A; Igt: 50mA; D2PAK; SMD; reel,tape
Type of thyristor: thyristor
Max. off-state voltage: 1.2kV
Max. load current: 47A
Load current: 30A
Gate current: 50mA
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 350A
Turn-on time: 2µs
Produkt ist nicht verfügbar
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TYN50W-1600TQ TYN50W-1600TQ WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB82531ED9A0EDCBAC277B9820&compId=TYN50W-1600T.pdf?ci_sign=4b94774899f36d98da028e88df7bd126c2df78bb pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36 Category: SMD/THT thyristors
Description: Thyristor; 1.6kV; Ifmax: 79A; 50A; Igt: 80mA; SOT429,TO247-3; THT
Type of thyristor: thyristor
Max. off-state voltage: 1.6kV
Max. load current: 79A
Load current: 50A
Gate current: 80mA
Case: SOT429; TO247-3
Mounting: THT
Kind of package: tube
Max. forward impulse current: 0.65kA
Turn-on time: 2µs
Produkt ist nicht verfügbar
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ESDAHD712BE2X ESDAHD712BE2X WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB90B41EDC8ACE001B9D4180C8&compId=ESDAHD712BE2.pdf?ci_sign=732c668f54258c115dccc206da2528d63153c94d Category: Protection diodes - arrays
Description: Diode: TVS array; 7.5÷13.3V; 19A; 500W; asymmetric,bidirectional
Version: ESD
Manufacturer series: HD
Kind of package: reel; tape
Mounting: SMD
Case: SOT23
Type of diode: TVS array
Leakage current: 1µA
Number of channels: 2
Max. off-state voltage: 7...12V
Breakdown voltage: 7.5...13.3V
Max. forward impulse current: 19A
Peak pulse power dissipation: 0.5kW
Semiconductor structure: asymmetric; bidirectional
Application: universal
Produkt ist nicht verfügbar
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BYC20D-600PQ BYC20D-600PQ WeEn Semiconductors byc20d-600p.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 20A; tube; Ifsm: 275A; SOD59,TO220AC
Mounting: THT
Type of diode: rectifying
Case: SOD59; TO220AC
Kind of package: tube
Reverse recovery time: 20ns
Max. forward voltage: 1.97V
Load current: 20A
Max. forward impulse current: 275A
Max. off-state voltage: 0.6kV
Semiconductor structure: single diode
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94+0.77 EUR
100+0.72 EUR
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BTA308X-800C0,127 BTA308X-800C0.pdf
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 8A; TO220FP; Igt: 35mA; Ifsm: 60A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 8A
Case: TO220FP
Gate current: 35mA
Max. forward impulse current: 60A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
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BTA308X-800ETQ bta308x-800et.pdf
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 8A; TO220FP; Igt: 10mA; Ifsm: 60A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 8A
Case: TO220FP
Gate current: 10mA
Max. forward impulse current: 60A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
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BTA308Y-800ETQ
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 8A; TO220AB; Igt: 10mA; Ifsm: 60A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 8A
Case: TO220AB
Gate current: 10mA
Max. forward impulse current: 60A
Technology: 3Q; Hi-Com
Features of semiconductor devices: high temperature; sensitive gate
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
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EC103D1,412 ec103d1.pdf
EC103D1,412
Hersteller: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 400V; Ifmax: 0.8A; 0.5A; Igt: 3uA; TO92; THT; bulk; Ifsm: 8A
Type of thyristor: thyristor
Max. off-state voltage: 0.4kV
Max. load current: 0.8A
Case: TO92
Gate current: 3µA
Mounting: THT
Kind of package: bulk
Turn-on time: 2µs
Load current: 0.5A
Max. forward impulse current: 8A
Produkt ist nicht verfügbar
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NXPSC20650W-AQ pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BD966C7F256F00C4&compId=NXPSC20650W-A.pdf?ci_sign=20d85f3b6247735c1014ed552b4f98afc9550616 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36
NXPSC20650W-AQ
Hersteller: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 2.1V
Max. load current: 20A
Max. forward impulse current: 50A
Kind of package: tube
Application: automotive industry
Produkt ist nicht verfügbar
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WNSC6D20650B6J pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDB8D17A394A7D00D4&compId=WNSC6D20650B6J.pdf?ci_sign=e887b72159ebcc12ef90526e0b821b321656f1e8
Hersteller: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SiC; SMD; 650V; 20A; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 20A
Semiconductor structure: single diode
Case: D2PAK
Max. forward voltage: 1.8V
Max. forward impulse current: 120A
Kind of package: reel; tape
Max. load current: 40A
Produkt ist nicht verfügbar
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WNSC6D20650WQ WNSC6D20650W.pdf
WNSC6D20650WQ
Hersteller: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO247-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A
Semiconductor structure: single diode
Case: TO247-2
Max. forward voltage: 1.4V
Max. forward impulse current: 155A
Kind of package: tube
Produkt ist nicht verfügbar
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BYV32E-300PQ pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BD95B955CDB060C4&compId=BYV32E-300P.pdf?ci_sign=f7f7fbbc6a96b744d3417cbff690b8631c544806 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36
BYV32E-300PQ
Hersteller: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 10Ax2; tube; Ifsm: 220A; SOT78,TO220AB
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 300V
Load current: 10A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 220A
Case: SOT78; TO220AB
Max. forward voltage: 1.25V
Max. load current: 20A
Reverse recovery time: 25ns
Heatsink thickness: 1.25...1.4mm
Produkt ist nicht verfügbar
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BYV32EB-200PJ byv32eb-200p.pdf
BYV32EB-200PJ
Hersteller: WeEn Semiconductors
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 10Ax2; 25ns; D2PAK,SOT404; Ifsm: 125A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 10A x2
Reverse recovery time: 25ns
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Case: D2PAK; SOT404
Max. forward voltage: 0.85V
Max. load current: 20A
Max. forward impulse current: 125A
Kind of package: reel; tape
Produkt ist nicht verfügbar
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BYV32EB-300PJ pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BD963EBC3DB120C4&compId=BYV32EB-300P.pdf?ci_sign=44df4d4918ee7b2325f3c599d4aeb56c9a415f47 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36
BYV32EB-300PJ
Hersteller: WeEn Semiconductors
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 300V; 10Ax2; 25ns; D2PAK,SOT404; Ifsm: 220A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 300V
Load current: 10A x2
Reverse recovery time: 25ns
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Case: D2PAK; SOT404
Max. forward voltage: 1.25V
Max. load current: 20A
Max. forward impulse current: 220A
Kind of package: reel; tape
Produkt ist nicht verfügbar
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BYV32EX-300PQ pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BD964B10D38520C4&compId=BYV32EX-300P.pdf?ci_sign=4968244df9558922ddf562afb67bf6717b590dab pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36
BYV32EX-300PQ
Hersteller: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 10Ax2; tube; Ifsm: 220A; Ufmax: 1.25V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 300V
Load current: 10A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 220A
Case: SOD113; TO220FP-2
Max. forward voltage: 1.25V
Max. load current: 20A
Reverse recovery time: 25ns
Produkt ist nicht verfügbar
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WNSCM80120R6Q WNSCM80120R6Q.pdf
Hersteller: WeEn Semiconductors
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 32A; Idm: 81A; 270W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 32A
Pulsed drain current: 81A
Power dissipation: 270W
Case: TO247-4
Gate-source voltage: -10...25V
On-state resistance: 0.11Ω
Mounting: THT
Gate charge: 59nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Produkt ist nicht verfügbar
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ACTT2S-800E,118 pVersion=0046&contRep=ZT&docId=005056AB752F1ED782E2D21B5FD0A259&compId=ACTT2S-800E.pdf?ci_sign=02805e9f71d4f8934a828b81c1963bcf8997af54 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36
ACTT2S-800E,118
Hersteller: WeEn Semiconductors
Category: Thyristors - others
Description: Thyristor: AC switch; 800V; Ifmax: 2A; Igt: 10mA; DPAK; SMD
Type of thyristor: AC switch
Max. off-state voltage: 0.8kV
Max. load current: 2A
Gate current: 10mA
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
auf Bestellung 343 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
97+0.74 EUR
137+0.52 EUR
154+0.46 EUR
182+0.39 EUR
250+0.36 EUR
Mindestbestellmenge: 97
Im Einkaufswagen  Stück im Wert von  UAH
BYC15M-650PQ pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDB8D1A321A22E40D4&compId=BYC15M-650PQ.pdf?ci_sign=869c7ba9e5bdd3ffa845f971cb4579e130bee32b
Hersteller: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 650V; 15A; tube; Ifsm: 180A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 650V
Load current: 15A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 180A
Case: SOD59; TO220AC
Max. forward voltage: 2.3V
Reverse recovery time: 14ns
Max. load current: 30A
Produkt ist nicht verfügbar
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P1KSMBJ68CAJ pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDB8E603AA2ACDE0D4&compId=P1KSMBJ.pdf?ci_sign=79a0fcbcbecb0d0af3b500b9296556ffc543ba48
Hersteller: WeEn Semiconductors
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1kW; 68V; 10.9A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1kW
Max. off-state voltage: 58.1V
Breakdown voltage: 68V
Max. forward impulse current: 10.9A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P1KSMBJ
Produkt ist nicht verfügbar
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SMDJ40AJ pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDB8E74FCDD7F0E0D4&compId=SMDJ%20Series.pdf?ci_sign=a6572f21ae2ae1b136361c5522d6aa7958ae3b4e
Hersteller: WeEn Semiconductors
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 44.8÷48.8V; 46.5A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 40V
Breakdown voltage: 44.8...48.8V
Max. forward impulse current: 46.5A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMDJ
Kind of package: reel; tape
Produkt ist nicht verfügbar
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BT155W-1400TQ BT155W-1400T.pdf
Hersteller: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 1.4kV; Ifmax: 79A; 50A; Igt: 50mA; SOT429,TO247-3; THT
Type of thyristor: thyristor
Max. off-state voltage: 1.4kV
Max. load current: 79A
Load current: 50A
Gate current: 50mA
Case: SOT429; TO247-3
Mounting: THT
Kind of package: tube
Max. forward impulse current: 715A
Turn-on time: 2µs
Produkt ist nicht verfügbar
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SM8S43CAJ pVersion=0046&contRep=ZT&docId=005056AB281E1EDE90C9DCF8552600D5&compId=SM8S_ser.pdf?ci_sign=de6efedc7b1a0f20d98cf269f0efb7ba8d77acec
Hersteller: WeEn Semiconductors
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 6.6kW; 47.8÷52.8V; 95.1A; bidirectional; DO218J; SM8S
Type of diode: TVS
Peak pulse power dissipation: 6.6kW
Max. off-state voltage: 43V
Breakdown voltage: 47.8...52.8V
Max. forward impulse current: 95.1A
Semiconductor structure: bidirectional
Case: DO218J
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Manufacturer series: SM8S
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
ESDALD18BCX pVersion=0046&contRep=ZT&docId=005056AB90B41EDC8ACDE1F9962920C8&compId=ESDALD18BC.pdf?ci_sign=a3f9bf3ae87dd08c8348e01ebd9b9c22cd5da5aa
ESDALD18BCX
Hersteller: WeEn Semiconductors
Category: Protection diodes - arrays
Description: Diode: TVS array; 19V; 8A; 350W; bidirectional; SOD323; Ch: 1; LD; ESD
Type of diode: TVS array
Peak pulse power dissipation: 0.35kW
Max. off-state voltage: 18V
Breakdown voltage: 19V
Max. forward impulse current: 8A
Semiconductor structure: bidirectional
Mounting: SMD
Leakage current: 1µA
Number of channels: 1
Kind of package: reel; tape
Version: ESD
Case: SOD323
Manufacturer series: LD
Produkt ist nicht verfügbar
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ESDALD12BCX pVersion=0046&contRep=ZT&docId=005056AB90B41EDC8ACDD98BB2B100C8&compId=ESDALDxxBC.pdf?ci_sign=25186217f24567f8ce5688ca1a3a95f9c307be81
ESDALD12BCX
Hersteller: WeEn Semiconductors
Category: Protection diodes - arrays
Description: Diode: TVS array; 13.3V; 10A; 350W; bidirectional; SOD323; Ch: 1
Manufacturer series: LD
Version: ESD
Mounting: SMD
Kind of package: reel; tape
Type of diode: TVS array
Application: universal
Leakage current: 1µA
Number of channels: 1
Max. off-state voltage: 12V
Max. forward impulse current: 10A
Breakdown voltage: 13.3V
Peak pulse power dissipation: 0.35kW
Case: SOD323
Semiconductor structure: bidirectional
Produkt ist nicht verfügbar
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P6SMBJ64CAJ pVersion=0046&contRep=ZT&docId=005056AB281E1EDF93CADF9A40DCA0D6&compId=P6SMBJ.pdf?ci_sign=549054d3bd78afb23b6bad8a4db93bf1e0463454
Hersteller: WeEn Semiconductors
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 71.6÷78V; 5.9A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 64V
Breakdown voltage: 71.6...78V
Max. forward impulse current: 5.9A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Produkt ist nicht verfügbar
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BTA204-800E.127 pVersion=0046&contRep=ZT&docId=005056AB752F1ED7829264EE0CC9C259&compId=BTA204-800E.pdf?ci_sign=4094da1a392bee596b128267c8e14d4ba3fdf09c pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36
BTA204-800E.127
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 4A; TO220AB; Igt: 10mA; Ifsm: 25A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 4A
Case: TO220AB
Gate current: 10mA
Max. forward impulse current: 25A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
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WSJM65R170XQ pVersion=0046&contRep=ZT&docId=005056AB281E1EDF93E36C1BA78960D6&compId=WSJM65R170XQ.pdf?ci_sign=5747ac009b72ff18769d17f6f7dcfe2f9d093752
Hersteller: WeEn Semiconductors
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 14A; Idm: 72A; 36W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 14A
Pulsed drain current: 72A
Power dissipation: 36W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.17Ω
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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ACTT2S-800ETNJ actt2s-800etn.pdf
Hersteller: WeEn Semiconductors
Category: Thyristors - others
Description: Thyristor: AC switch; 800V; Ifmax: 2A; Igt: 10mA; DPAK; SMD
Type of thyristor: AC switch
Max. off-state voltage: 0.8kV
Max. load current: 2A
Gate current: 10mA
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Produkt ist nicht verfügbar
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ACTT4S-800E,118 pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA8DF1A0DF366A0D3&compId=ACTT4S-800E.pdf?ci_sign=61a3631da004dd589c7e85f1d96b66b298a432c8
ACTT4S-800E,118
Hersteller: WeEn Semiconductors
Category: Thyristors - others
Description: Thyristor: AC switch; 800V; Ifmax: 4A; Igt: 10mA; DPAK; SMD
Case: DPAK
Mounting: SMD
Type of thyristor: AC switch
Gate current: 10mA
Max. load current: 4A
Max. off-state voltage: 0.8kV
Kind of package: reel; tape
auf Bestellung 2201 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
120+0.6 EUR
141+0.51 EUR
200+0.36 EUR
250+0.34 EUR
Mindestbestellmenge: 120
Im Einkaufswagen  Stück im Wert von  UAH
BYV30B-600PJ byv30b-600p.pdf
BYV30B-600PJ
Hersteller: WeEn Semiconductors
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 30A; 75ns; D2PAK,SOT404; Ufmax: 1.35V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 30A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: D2PAK; SOT404
Max. forward voltage: 1.35V
Max. forward impulse current: 330A
Kind of package: reel; tape
Produkt ist nicht verfügbar
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BYV25F-600,127 byv25f-600.pdf
BYV25F-600,127
Hersteller: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 5A; tube; Ifsm: 66A; SOD59,TO220AC
Mounting: THT
Type of diode: rectifying
Kind of package: tube
Semiconductor structure: single diode
Case: SOD59; TO220AC
Reverse recovery time: 35ns
Load current: 5A
Max. forward voltage: 1.7V
Max. forward impulse current: 66A
Max. off-state voltage: 0.6kV
Produkt ist nicht verfügbar
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BT139-800.127 BT139-800.pdf _ween_psg2020.pdf
BT139-800.127
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 16A; TO220AB; Igt: 35/70mA; Ifsm: 155A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: TO220AB
Gate current: 35/70mA
Mounting: THT
Kind of package: tube
Technology: 4Q
Max. forward impulse current: 155A
Features of semiconductor devices: sensitive gate
Produkt ist nicht verfügbar
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OT412,115
OT412,115
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 1A; SOT223; 4Q; sensitive gate
Type of thyristor: triac
Max. load current: 1A
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Technology: 4Q
Features of semiconductor devices: sensitive gate
auf Bestellung 776 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
260+0.28 EUR
317+0.23 EUR
360+0.2 EUR
368+0.19 EUR
Mindestbestellmenge: 260
Im Einkaufswagen  Stück im Wert von  UAH
BUJ105A,127 buj105a.pdf
BUJ105A,127
Hersteller: WeEn Semiconductors
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 400V; 8A; 80W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 400V
Collector current: 8A
Power dissipation: 80W
Case: TO220AB
Current gain: 13...36
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
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BUJ105AB,118 buj105ab.pdf
Hersteller: WeEn Semiconductors
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 400V; 8A; 125W; D2PAK
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 400V
Collector current: 8A
Power dissipation: 125W
Case: D2PAK
Current gain: 13...36
Mounting: SMD
Kind of package: reel; tape
Produkt ist nicht verfügbar
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BUJ105AD,118 buj105ad_1.pdf
Hersteller: WeEn Semiconductors
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 400V; 8A; 80W; DPAK
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 400V
Collector current: 8A
Power dissipation: 80W
Case: DPAK
Current gain: 13...36
Mounting: SMD
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
ESDALD15BCX pVersion=0046&contRep=ZT&docId=005056AB90B41EDC8ACDD98BB2B100C8&compId=ESDALDxxBC.pdf?ci_sign=25186217f24567f8ce5688ca1a3a95f9c307be81
ESDALD15BCX
Hersteller: WeEn Semiconductors
Category: Protection diodes - arrays
Description: Diode: TVS array; 16.5V; 8A; 350W; bidirectional; SOD323; Ch: 1; LD
Manufacturer series: LD
Mounting: SMD
Kind of package: reel; tape
Type of diode: TVS array
Leakage current: 1µA
Number of channels: 1
Max. forward impulse current: 8A
Max. off-state voltage: 15V
Breakdown voltage: 16.5V
Peak pulse power dissipation: 0.35kW
Semiconductor structure: bidirectional
Version: ESD
Case: SOD323
Application: universal
Produkt ist nicht verfügbar
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BYV42EB-200,118 byv42e-200.pdf
BYV42EB-200,118
Hersteller: WeEn Semiconductors
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 15Ax2; 28ns; D2PAK,SOT404; Ifsm: 160A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 15A x2
Reverse recovery time: 28ns
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Case: D2PAK; SOT404
Max. forward voltage: 0.85V
Max. load current: 30A
Max. forward impulse current: 160A
Kind of package: reel; tape
Produkt ist nicht verfügbar
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ESDALD05BCX pVersion=0046&contRep=ZT&docId=005056AB90B41EDC8ACDD98BB2B100C8&compId=ESDALDxxBC.pdf?ci_sign=25186217f24567f8ce5688ca1a3a95f9c307be81
ESDALD05BCX
Hersteller: WeEn Semiconductors
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.5V; 15A; 350W; bidirectional; SOD323; Ch: 1; LD
Application: universal
Peak pulse power dissipation: 0.35kW
Case: SOD323
Version: ESD
Manufacturer series: LD
Kind of package: reel; tape
Mounting: SMD
Type of diode: TVS array
Leakage current: 1µA
Number of channels: 1
Max. forward impulse current: 15A
Max. off-state voltage: 5V
Breakdown voltage: 6.5V
Semiconductor structure: bidirectional
Produkt ist nicht verfügbar
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ESDALD05UD4X pVersion=0046&contRep=ZT&docId=005056AB90B41EDC8ACDFCCEC63C40C8&compId=ESDALD05UD4.pdf?ci_sign=b98b0c7f6f022c4af3d3487717863fbfdd5a7da9
ESDALD05UD4X
Hersteller: WeEn Semiconductors
Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; 5.5A; 88W; unidirectional; SOT23-6; Ch: 4; LD
Application: USB
Peak pulse power dissipation: 88W
Case: SOT23-6
Version: ESD
Manufacturer series: LD
Kind of package: reel; tape
Mounting: SMD
Type of diode: TVS array
Leakage current: 0.1µA
Number of channels: 4
Max. forward impulse current: 5.5A
Max. off-state voltage: 5V
Breakdown voltage: 6V
Semiconductor structure: unidirectional
Produkt ist nicht verfügbar
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ESDALD05UE2X pVersion=0046&contRep=ZT&docId=005056AB90B41EDC8ACDFA45227D20C8&compId=ESDALD05UE2.pdf?ci_sign=b7e92811dd2dc190ccd859206b47f21b6806b4d2
ESDALD05UE2X
Hersteller: WeEn Semiconductors
Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; 4A; 60W; unidirectional; SOT23-3; Ch: 2; LD; ESD
Application: HDMI; USB
Peak pulse power dissipation: 60W
Case: SOT23-3
Version: ESD
Manufacturer series: LD
Kind of package: reel; tape
Mounting: SMD
Type of diode: TVS array
Leakage current: 0.1µA
Number of channels: 2
Max. forward impulse current: 4A
Max. off-state voltage: 5V
Breakdown voltage: 6V
Semiconductor structure: unidirectional
Produkt ist nicht verfügbar
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ESDALD05UG4X pVersion=0046&contRep=ZT&docId=005056AB90B41EDC8ACDF63F94FDA0C8&compId=ESDALD05UG4.pdf?ci_sign=7fb6413bc15a8c691660d84c2508478576bffea9
Hersteller: WeEn Semiconductors
Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; 4A; 60W; unidirectional; DFN2510; Ch: 4; LD; ESD
Application: HDMI; USB
Peak pulse power dissipation: 60W
Case: DFN2510
Version: ESD
Manufacturer series: LD
Kind of package: reel; tape
Mounting: SMD
Type of diode: TVS array
Leakage current: 0.1µA
Number of channels: 4
Max. forward impulse current: 4A
Max. off-state voltage: 5V
Breakdown voltage: 6V
Semiconductor structure: unidirectional
Produkt ist nicht verfügbar
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ESDALD05UJ2X pVersion=0046&contRep=ZT&docId=005056AB90B41EDC8ACDF39A6C3D20C8&compId=ESDALD05UJ2.pdf?ci_sign=79716f2c4e6b2a09c9a88a15e5b9d3c5ef2bab45
Hersteller: WeEn Semiconductors
Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; 8A; 136W; unidirectional; SOT143; Ch: 2; LD; ESD
Application: USB
Peak pulse power dissipation: 136W
Case: SOT143
Version: ESD
Manufacturer series: LD
Kind of package: reel; tape
Mounting: SMD
Type of diode: TVS array
Leakage current: 0.1µA
Number of channels: 2
Max. forward impulse current: 8A
Max. off-state voltage: 5V
Breakdown voltage: 6V
Semiconductor structure: unidirectional
Produkt ist nicht verfügbar
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SMDJ30CAJ pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDB8E74FCDD7F0E0D4&compId=SMDJ%20Series.pdf?ci_sign=a6572f21ae2ae1b136361c5522d6aa7958ae3b4e
Hersteller: WeEn Semiconductors
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 33.6÷36.59V; 62A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 30V
Breakdown voltage: 33.6...36.59V
Max. forward impulse current: 62A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMDJ
Kind of package: reel; tape
Produkt ist nicht verfügbar
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ESDHD03UFX ESDHDxxUF%20Series.pdf
Hersteller: WeEn Semiconductors
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 4÷8V; 24A; unidirectional; DFN1006-2; reel,tape; Ch: 1
Mounting: SMD
Kind of package: reel; tape
Type of diode: TVS
Semiconductor structure: unidirectional
Leakage current: 1µA
Number of channels: 1
Max. off-state voltage: 3.3V
Breakdown voltage: 4...8V
Max. forward impulse current: 24A
Manufacturer series: HD
Case: DFN1006-2
Version: ESD
Produkt ist nicht verfügbar
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ESDHD05UFX pVersion=0046&contRep=ZT&docId=005056AB90B41EDC8ACDF06C0C0FC0C8&compId=ESDHD05UF.pdf?ci_sign=d39c34f5b6400c25b9ee66084c63a1710f545894
Hersteller: WeEn Semiconductors
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 320W; 6÷9.5V; 20A; unidirectional; DFN1006-2; reel,tape
Mounting: SMD
Kind of package: reel; tape
Type of diode: TVS
Semiconductor structure: unidirectional
Leakage current: 0.1µA
Number of channels: 1
Max. off-state voltage: 5V
Breakdown voltage: 6...9.5V
Max. forward impulse current: 20A
Manufacturer series: HD
Peak pulse power dissipation: 320W
Case: DFN1006-2
Version: ESD
Produkt ist nicht verfügbar
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WMSC030H12B1P6T pVersion=0046&contRep=ZT&docId=005056AB281E1EDF93CDE1A264DE80D6&compId=WMSC030H12B1P6T.pdf?ci_sign=1a4928565b4e4a2baa6b6b0a4d9949ba1263e13e
Hersteller: WeEn Semiconductors
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 53A; Press-in PCB; Idm: 100A
Technology: SiC
Topology: MOSFET half-bridge; NTC thermistor
Type of semiconductor module: MOSFET transistor
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Gate-source voltage: -4...18V
On-state resistance: 30mΩ
Drain current: 53A
Pulsed drain current: 100A
Power dissipation: 111W
Drain-source voltage: 1.2kV
Semiconductor structure: transistor/transistor
Produkt ist nicht verfügbar
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BYC10DX-600,127 pVersion=0046&contRep=ZT&docId=005056AB281E1EDE808A6AC27DCD60D5&compId=BYC10DX-600.pdf?ci_sign=72784e1a88ab44f95d463e89f3beb6ea0768e466
BYC10DX-600,127
Hersteller: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10A; tube; Ifsm: 65A; SOD113,TO220FP-2
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 10A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Kind of package: tube
Max. forward impulse current: 65A
Case: SOD113; TO220FP-2
Max. forward voltage: 1.4V
Reverse recovery time: 18ns
auf Bestellung 1002 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
90+0.8 EUR
117+0.61 EUR
127+0.57 EUR
133+0.54 EUR
143+0.5 EUR
250+0.48 EUR
500+0.47 EUR
Mindestbestellmenge: 90
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BYC10B-600,118 pVersion=0046&contRep=ZT&docId=005056AB752F1ED782E2325FB5686259&compId=BYC10B-600.pdf?ci_sign=1fa5f9365fe1328c5d8d593c32875b05c581d6db pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36
BYC10B-600,118
Hersteller: WeEn Semiconductors
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 10A; 55ns; D2PAK,SOT404; Ufmax: 1.4V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 10A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: reel; tape
Max. forward impulse current: 71A
Case: D2PAK; SOT404
Max. forward voltage: 1.4V
Reverse recovery time: 55ns
auf Bestellung 513 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
77+0.93 EUR
101+0.71 EUR
125+0.57 EUR
136+0.53 EUR
Mindestbestellmenge: 77
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BYC10X-600,127 Discrete%20Selection%20Guide%202011.pdf
BYC10X-600,127
Hersteller: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10A; tube; Ifsm: 91A; SOD113,TO220FP-2
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 10A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Kind of package: tube
Max. forward impulse current: 91A
Case: SOD113; TO220FP-2
Max. forward voltage: 1.4V
Reverse recovery time: 19ns
Produkt ist nicht verfügbar
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BYC10X-600PQ byc10x-600p.pdf
BYC10X-600PQ
Hersteller: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10A; tube; Ifsm: 150A; Ufmax: 1.3V; 19ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 10A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Kind of package: tube
Max. forward impulse current: 150A
Case: SOD113; TO220FP-2
Max. forward voltage: 1.3V
Reverse recovery time: 19ns
Produkt ist nicht verfügbar
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BYC10-600CT,127 byc10-600ct.pdf
BYC10-600CT,127
Hersteller: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 5Ax2; tube; Ifsm: 40A; SOT78,TO220AB
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 5A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: superfast switching
Kind of package: tube
Max. forward impulse current: 40A
Case: SOT78; TO220AB
Max. forward voltage: 1.4V
Reverse recovery time: 19ns
Heatsink thickness: 1.25...1.4mm
Max. load current: 10A
Produkt ist nicht verfügbar
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BYC10-600PQ pVersion=0046&contRep=ZT&docId=005056AB281E1EDCA7F20CFB45B1E0CE&compId=BYC10-600P.pdf?ci_sign=ada853b3a941e7c83c943836a29a0afe6383e10f
BYC10-600PQ
Hersteller: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10A; tube; Ifsm: 150A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 10A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 150A
Case: SOD59; TO220AC
Max. forward voltage: 2V
Reverse recovery time: 18ns
Max. load current: 20A
Produkt ist nicht verfügbar
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BYC100W-1200PQ BYC100W-1200PQ_DS.pdf
BYC100W-1200PQ
Hersteller: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 100A; tube; Ifsm: 900A; TO247-2; 115ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 100A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Kind of package: tube
Max. forward impulse current: 0.9kA
Case: TO247-2
Max. forward voltage: 2.2V
Reverse recovery time: 115ns
Produkt ist nicht verfügbar
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BYC10D-600,127 pVersion=0046&contRep=ZT&docId=005056AB281E1EDE808A6EC898B540D5&compId=BYC10D-600.pdf?ci_sign=10bfc6fd004b7d73304ce6a3c2c434f15dfbaef6
BYC10D-600,127
Hersteller: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10A; tube; Ifsm: 65A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 10A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Kind of package: tube
Max. forward impulse current: 65A
Case: SOD59; TO220AC
Max. forward voltage: 1.4V
Reverse recovery time: 18ns
Produkt ist nicht verfügbar
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P1KSMBJ68AJ pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDB8E603AA2ACDE0D4&compId=P1KSMBJ.pdf?ci_sign=79a0fcbcbecb0d0af3b500b9296556ffc543ba48
Hersteller: WeEn Semiconductors
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1kW; 68V; 10.9A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1kW
Max. off-state voltage: 58.1V
Breakdown voltage: 68V
Max. forward impulse current: 10.9A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P1KSMBJ
Produkt ist nicht verfügbar
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N0118GA,116 n0118ga.pdf
Hersteller: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 0.8A; 0.51A; Igt: 7uA; TO92; THT; Ifsm: 9A
Mounting: THT
Type of thyristor: thyristor
Case: TO92
Gate current: 7µA
Load current: 0.51A
Max. load current: 0.8A
Max. forward impulse current: 9A
Max. off-state voltage: 0.6kV
Produkt ist nicht verfügbar
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N0118GA,412 n0118ga.pdf
Hersteller: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 0.8A; 0.51A; Igt: 7uA; TO92; THT; bulk
Mounting: THT
Type of thyristor: thyristor
Case: TO92
Gate current: 7µA
Load current: 0.51A
Max. load current: 0.8A
Max. forward impulse current: 9A
Max. off-state voltage: 0.6kV
Kind of package: bulk
Produkt ist nicht verfügbar
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N0118GAML n0118ga.pdf
Hersteller: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 0.8A; 0.51A; Igt: 7uA; TO92; THT; Ifsm: 9A
Mounting: THT
Type of thyristor: thyristor
Case: TO92
Gate current: 7µA
Load current: 0.51A
Max. load current: 0.8A
Max. forward impulse current: 9A
Max. off-state voltage: 0.6kV
Produkt ist nicht verfügbar
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BT153B-1200T-AJ pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BD96D58C7D5840C4&compId=BT153B-1200T-A.pdf?ci_sign=eff89ee9663c312cdc19717d11d6457989dd2210 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36
Hersteller: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 47A; 30A; Igt: 50mA; D2PAK; SMD; reel,tape
Type of thyristor: thyristor
Max. off-state voltage: 1.2kV
Max. load current: 47A
Load current: 30A
Gate current: 50mA
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 350A
Turn-on time: 2µs
Application: automotive industry
Produkt ist nicht verfügbar
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BT153B-1200TJ pVersion=0046&contRep=ZT&docId=005056AB281E1EDF93CBBDE9499020D6&compId=BT153B-1200T.pdf?ci_sign=67ab5288c3663ed0afc499b3e531425357b2235b
Hersteller: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 47A; 30A; Igt: 50mA; D2PAK; SMD; reel,tape
Type of thyristor: thyristor
Max. off-state voltage: 1.2kV
Max. load current: 47A
Load current: 30A
Gate current: 50mA
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 350A
Turn-on time: 2µs
Produkt ist nicht verfügbar
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TYN50W-1600TQ pVersion=0046&contRep=ZT&docId=005056AB82531ED9A0EDCBAC277B9820&compId=TYN50W-1600T.pdf?ci_sign=4b94774899f36d98da028e88df7bd126c2df78bb pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36
TYN50W-1600TQ
Hersteller: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 1.6kV; Ifmax: 79A; 50A; Igt: 80mA; SOT429,TO247-3; THT
Type of thyristor: thyristor
Max. off-state voltage: 1.6kV
Max. load current: 79A
Load current: 50A
Gate current: 80mA
Case: SOT429; TO247-3
Mounting: THT
Kind of package: tube
Max. forward impulse current: 0.65kA
Turn-on time: 2µs
Produkt ist nicht verfügbar
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ESDAHD712BE2X pVersion=0046&contRep=ZT&docId=005056AB90B41EDC8ACE001B9D4180C8&compId=ESDAHD712BE2.pdf?ci_sign=732c668f54258c115dccc206da2528d63153c94d
ESDAHD712BE2X
Hersteller: WeEn Semiconductors
Category: Protection diodes - arrays
Description: Diode: TVS array; 7.5÷13.3V; 19A; 500W; asymmetric,bidirectional
Version: ESD
Manufacturer series: HD
Kind of package: reel; tape
Mounting: SMD
Case: SOT23
Type of diode: TVS array
Leakage current: 1µA
Number of channels: 2
Max. off-state voltage: 7...12V
Breakdown voltage: 7.5...13.3V
Max. forward impulse current: 19A
Peak pulse power dissipation: 0.5kW
Semiconductor structure: asymmetric; bidirectional
Application: universal
Produkt ist nicht verfügbar
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BYC20D-600PQ byc20d-600p.pdf
BYC20D-600PQ
Hersteller: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 20A; tube; Ifsm: 275A; SOD59,TO220AC
Mounting: THT
Type of diode: rectifying
Case: SOD59; TO220AC
Kind of package: tube
Reverse recovery time: 20ns
Max. forward voltage: 1.97V
Load current: 20A
Max. forward impulse current: 275A
Max. off-state voltage: 0.6kV
Semiconductor structure: single diode
auf Bestellung 440 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
74+0.97 EUR
82+0.88 EUR
94+0.77 EUR
100+0.72 EUR
Mindestbestellmenge: 74
Im Einkaufswagen  Stück im Wert von  UAH
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