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BT258-500R,127 BT258-500R,127 WeEn Semiconductors BT258-500R.pdf Category: SMD/THT thyristors
Description: Thyristor; 500V; Ifmax: 8A; 5A; Igt: 200uA; TO220AB; THT; tube; 2us
Type of thyristor: thyristor
Max. off-state voltage: 500V
Max. load current: 8A
Load current: 5A
Gate current: 0.2mA
Case: TO220AB
Mounting: THT
Kind of package: tube
Max. forward impulse current: 75A
Turn-on time: 2µs
auf Bestellung 984 Stücke:
Lieferzeit 14-21 Tag (e)
73+1.18 EUR
89+0.96 EUR
119+0.71 EUR
500+0.6 EUR
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BT138-800E.127 BT138-800E.127 WeEn Semiconductors BT138-800E.pdf _ween_psg2020.pdf Category: Triacs
Description: Triac; 800V; 12A; TO220AB; Igt: 10/25mA; Ifsm: 95A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 12A
Case: TO220AB
Gate current: 10/25mA
Mounting: THT
Kind of package: tube
Features of semiconductor devices: sensitive gate
Max. forward impulse current: 95A
Technology: 4Q
Produkt ist nicht verfügbar
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MCR08BT1,115 MCR08BT1,115 WeEn Semiconductors MCR08BT1.pdf _ween_psg2020.pdf Category: SMD/THT thyristors
Description: Thyristor; 200V; Ifmax: 0.8A; 0.5A; Igt: 50uA; SOT223; SMD; reel,tape
Kind of package: reel; tape
Case: SOT223
Mounting: SMD
Turn-on time: 2µs
Gate current: 50µA
Load current: 0.5A
Max. load current: 0.8A
Max. forward impulse current: 8A
Max. off-state voltage: 200V
Type of thyristor: thyristor
auf Bestellung 1721 Stücke:
Lieferzeit 14-21 Tag (e)
143+0.6 EUR
169+0.5 EUR
274+0.31 EUR
500+0.21 EUR
1000+0.18 EUR
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WNS20H100CBJ WNS20H100CBJ WeEn Semiconductors WNS20H100CB.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 100V; 10Ax2; reel,tape
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.7V
Max. load current: 20A
Max. forward impulse current: 180A
Kind of package: reel; tape
auf Bestellung 346 Stücke:
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65+1.33 EUR
89+0.96 EUR
131+0.65 EUR
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BT1308W-400D,115 BT1308W-400D,115 WeEn Semiconductors bt1308w-400d.pdf Category: Triacs
Description: Triac; 400V; 0.8A; SOT223; Igt: 5/7mA; Ifsm: 9A; 4Q; sensitive gate
Mounting: SMD
Kind of package: reel; tape
Case: SOT223
Features of semiconductor devices: sensitive gate
Type of thyristor: triac
Gate current: 5/7mA
Max. load current: 0.8A
Max. forward impulse current: 9A
Max. off-state voltage: 0.4kV
Technology: 4Q
auf Bestellung 1008 Stücke:
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136+0.63 EUR
177+0.48 EUR
285+0.3 EUR
345+0.25 EUR
500+0.21 EUR
1000+0.19 EUR
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BT1308W-600D,115 BT1308W-600D,115 WeEn Semiconductors BT1308W-600D.pdf _ween_psg2020.pdf Category: Triacs
Description: Triac; 600V; 0.8A; SOT223; Igt: 5/7mA; Ifsm: 9A; 4Q; sensitive gate
Mounting: SMD
Kind of package: reel; tape
Case: SOT223
Features of semiconductor devices: sensitive gate
Type of thyristor: triac
Gate current: 5/7mA
Max. load current: 0.8A
Max. forward impulse current: 9A
Max. off-state voltage: 0.6kV
Technology: 4Q
auf Bestellung 482 Stücke:
Lieferzeit 14-21 Tag (e)
143+0.6 EUR
186+0.46 EUR
217+0.39 EUR
360+0.24 EUR
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BTA312-800CT,127 BTA312-800CT,127 WeEn Semiconductors bta312-800ct.pdf Category: Triacs
Description: Triac; 800V; 12A; TO220AB; Igt: 35mA; Ifsm: 100A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 12A
Case: TO220AB
Gate current: 35mA
Max. forward impulse current: 100A
Technology: 3Q; Hi-Com
Features of semiconductor devices: high temperature; sensitive gate
Mounting: THT
Kind of package: tube
auf Bestellung 1762 Stücke:
Lieferzeit 14-21 Tag (e)
80+1.07 EUR
92+0.93 EUR
104+0.82 EUR
116+0.74 EUR
120+0.71 EUR
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BTA312B-800ET,118 BTA312B-800ET,118 WeEn Semiconductors BTA312B-800ET.PDF Category: Triacs
Description: Triac; 800V; 12A; D2PAK; Igt: 10mA; Ifsm: 100A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 12A
Case: D2PAK
Gate current: 10mA
Max. forward impulse current: 100A
Technology: 3Q; Hi-Com
Features of semiconductor devices: high temperature; sensitive gate
Mounting: SMD
Kind of package: reel; tape
auf Bestellung 779 Stücke:
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80+1.07 EUR
98+0.87 EUR
109+0.79 EUR
124+0.69 EUR
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BTA312X-800CTQ BTA312X-800CTQ WeEn Semiconductors BTA312X-800CT.pdf _ween_psg2020.pdf Category: Triacs
Description: Triac; 800V; 12A; TO220FP; Igt: 35mA; Ifsm: 100A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 12A
Case: TO220FP
Gate current: 35mA
Max. forward impulse current: 100A
Technology: 3Q; Hi-Com
Features of semiconductor devices: high temperature; sensitive gate
Mounting: THT
Kind of package: tube
auf Bestellung 719 Stücke:
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81+1.06 EUR
103+0.83 EUR
117+0.73 EUR
130+0.65 EUR
250+0.63 EUR
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BTA312B-800B,118 BTA312B-800B,118 WeEn Semiconductors bta312b-800b.pdf Category: Triacs
Description: Triac; 800V; 12A; D2PAK; Igt: 50mA; Ifsm: 100A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 12A
Case: D2PAK
Gate current: 50mA
Max. forward impulse current: 100A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
auf Bestellung 751 Stücke:
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74+1.15 EUR
82+1.05 EUR
93+0.92 EUR
102+0.84 EUR
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BTA312Y-600C,127 BTA312Y-600C,127 WeEn Semiconductors bta312y-600c.pdf _ween_psg2020.pdf Category: Triacs
Description: Triac; 600V; 12A; TO220AB; Igt: 35mA; Ifsm: 100A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: TO220AB
Gate current: 35mA
Max. forward impulse current: 100A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
auf Bestellung 309 Stücke:
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37+2.31 EUR
57+1.51 EUR
73+1.18 EUR
100+1.07 EUR
250+0.93 EUR
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BTA312-800B,127 BTA312-800B,127 WeEn Semiconductors bta312-800b.pdf Category: Triacs
Description: Triac; 800V; 12A; TO220AB; Igt: 50mA; Ifsm: 100A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 12A
Case: TO220AB
Gate current: 50mA
Max. forward impulse current: 100A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
auf Bestellung 599 Stücke:
Lieferzeit 14-21 Tag (e)
88+0.98 EUR
96+0.89 EUR
107+0.8 EUR
121+0.7 EUR
500+0.67 EUR
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BTA312-600CT,127 BTA312-600CT,127 WeEn Semiconductors _ween_psg2020.pdf Category: Triacs
Description: Triac; 600V; 12A; TO220AB; Igt: 35mA; Ifsm: 100A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: TO220AB
Gate current: 35mA
Max. forward impulse current: 100A
Technology: 3Q; Hi-Com
Features of semiconductor devices: high temperature; sensitive gate
Mounting: THT
Kind of package: tube
auf Bestellung 380 Stücke:
Lieferzeit 14-21 Tag (e)
66+1.3 EUR
80+1.07 EUR
100+0.86 EUR
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BTA312X-600D,127 BTA312X-600D,127 WeEn Semiconductors bta312x-600d.pdf Category: Triacs
Description: Triac; 600V; 12A; TO220FP; Igt: 5mA; Ifsm: 100A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: TO220FP
Gate current: 5mA
Max. forward impulse current: 100A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
auf Bestellung 652 Stücke:
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68+1.26 EUR
97+0.88 EUR
118+0.73 EUR
500+0.62 EUR
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BTA312B-600D,118 BTA312B-600D,118 WeEn Semiconductors _ween_psg2020.pdf Category: Triacs
Description: Triac; 600V; 12A; D2PAK; Igt: 5mA; Ifsm: 100A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: D2PAK
Gate current: 5mA
Max. forward impulse current: 100A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
auf Bestellung 800 Stücke:
Lieferzeit 14-21 Tag (e)
42+2.06 EUR
60+1.43 EUR
100+1.15 EUR
500+0.98 EUR
800+0.92 EUR
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BTA312B-800C,118 BTA312B-800C,118 WeEn Semiconductors bta312b-800c.pdf Category: Triacs
Description: Triac; 800V; 12A; D2PAK; Igt: 35mA; Ifsm: 100A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 12A
Case: D2PAK
Gate current: 35mA
Max. forward impulse current: 100A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
auf Bestellung 775 Stücke:
Lieferzeit 14-21 Tag (e)
45+1.93 EUR
67+1.27 EUR
100+0.95 EUR
500+0.73 EUR
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BTA312B-600CT,118 BTA312B-600CT,118 WeEn Semiconductors BTA312B-600CT.pdf _ween_psg2020.pdf Category: Triacs
Description: Triac; 600V; 12A; D2PAK; Igt: 35mA; Ifsm: 100A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: D2PAK
Gate current: 35mA
Max. forward impulse current: 100A
Technology: 3Q; Hi-Com
Features of semiconductor devices: high temperature; sensitive gate
Mounting: SMD
Kind of package: reel; tape
auf Bestellung 478 Stücke:
Lieferzeit 14-21 Tag (e)
38+2.25 EUR
60+1.44 EUR
100+0.98 EUR
250+0.87 EUR
Mindestbestellmenge: 38 Stücke
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BTA312B-800E,118 BTA312B-800E,118 WeEn Semiconductors bta312b-600e.pdf Category: Triacs
Description: Triac; 800V; 12A; D2PAK; Igt: 10mA; Ifsm: 100A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 12A
Case: D2PAK
Gate current: 10mA
Max. forward impulse current: 100A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
auf Bestellung 84 Stücke:
Lieferzeit 14-21 Tag (e)
63+1.36 EUR
75+1.15 EUR
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BTA312X-800B,127 BTA312X-800B,127 WeEn Semiconductors bta312x-800b.pdf Category: Triacs
Description: Triac; 800V; 12A; TO220FP; Igt: 50mA; Ifsm: 100A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 12A
Case: TO220FP
Gate current: 50mA
Max. forward impulse current: 100A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
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BTA312X-800C,127 BTA312X-800C,127 WeEn Semiconductors bta312x-800c.pdf Category: Triacs
Description: Triac; 800V; 12A; TO220FP; Igt: 35mA; Ifsm: 100A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 12A
Case: TO220FP
Gate current: 35mA
Max. forward impulse current: 100A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1000 Stücke
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BTA312-800E,127 BTA312-800E,127 WeEn Semiconductors BTA312-600E.pdf Category: Triacs
Description: Triac; 800V; 12A; TO220AB; Igt: 10mA; Ifsm: 100A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 12A
Case: TO220AB
Gate current: 10mA
Max. forward impulse current: 100A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
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BTA312-800ET,127 BTA312-800ET,127 WeEn Semiconductors bta312-800et.pdf Category: Triacs
Description: Triac; 800V; 12A; TO220AB; Igt: 10mA; Ifsm: 100A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 12A
Case: TO220AB
Gate current: 10mA
Max. forward impulse current: 100A
Technology: 3Q; Hi-Com
Features of semiconductor devices: high temperature; sensitive gate
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1000 Stücke
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BTA312B-600C,118 BTA312B-600C,118 WeEn Semiconductors bta312b-600c.pdf Category: Triacs
Description: Triac; 600V; 12A; D2PAK; Igt: 35mA; Ifsm: 100A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: D2PAK
Gate current: 35mA
Max. forward impulse current: 100A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
Produkt ist nicht verfügbar
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BTA312-600C,127 BTA312-600C,127 WeEn Semiconductors PHGLS30272-1.pdf?t.download=true&u=5oefqw bta312-600c.pdf Category: Triacs
Description: Triac; 600V; 12A; TO220AB; Igt: 35mA; Ifsm: 100A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: TO220AB
Gate current: 35mA
Max. forward impulse current: 100A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
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BTA312-600D,127 BTA312-600D,127 WeEn Semiconductors BTA312-600D.pdf _ween_psg2020.pdf Category: Triacs
Description: Triac; 600V; 12A; TO220AB; Igt: 5mA; Ifsm: 100A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: TO220AB
Gate current: 5mA
Max. forward impulse current: 100A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
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BTA312B-600E,118 BTA312B-600E,118 WeEn Semiconductors bta312b-600e.pdf Category: Triacs
Description: Triac; 600V; 12A; D2PAK; Igt: 10mA; Ifsm: 100A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: D2PAK
Gate current: 10mA
Max. forward impulse current: 100A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
Produkt ist nicht verfügbar
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BTA312G-600CTQ BTA312G-600CTQ WeEn Semiconductors _ween_psg2020.pdf Category: Triacs
Description: Triac; 600V; 12A; I2PAK; Igt: 35mA; Ifsm: 100A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: I2PAK
Gate current: 35mA
Max. forward impulse current: 100A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
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BTA312X-800E,127 BTA312X-800E,127 WeEn Semiconductors bta312x-800e.pdf Category: Triacs
Description: Triac; 800V; 12A; TO220FP; Igt: 10mA; Ifsm: 100A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 12A
Case: TO220FP
Gate current: 10mA
Max. forward impulse current: 100A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTA312-600E,127 BTA312-600E,127 WeEn Semiconductors BTA312-600E.pdf Category: Triacs
Description: Triac; 600V; 12A; TO220AB; Igt: 10mA; Ifsm: 100A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: TO220AB
Gate current: 10mA
Max. forward impulse current: 100A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
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BTA312-800C,127 BTA312-800C,127 WeEn Semiconductors bta312-800c.pdf Category: Triacs
Description: Triac; 800V; 12A; TO220AB; Igt: 35mA; Ifsm: 100A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 12A
Case: TO220AB
Gate current: 35mA
Max. forward impulse current: 100A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1000 Stücke
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BTA312X-600C,127 BTA312X-600C,127 WeEn Semiconductors BTA312X-600C.pdf Category: Triacs
Description: Triac; 600V; 12A; TO220FP; Igt: 35mA; Ifsm: 100A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: TO220FP
Gate current: 35mA
Max. forward impulse current: 100A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
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BTA312X-600E,127 BTA312X-600E,127 WeEn Semiconductors BTA312X-600E.pdf _ween_psg2020.pdf Category: Triacs
Description: Triac; 600V; 12A; TO220FP; Igt: 10mA; Ifsm: 100A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: TO220FP
Gate current: 10mA
Max. forward impulse current: 100A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
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BTA312X-800B/DGQ BTA312X-800B/DGQ WeEn Semiconductors BTA312X-800B.pdf _ween_psg2020.pdf Category: Triacs
Description: Triac; 800V; 12A; TO220FP; Igt: 50mA; Ifsm: 100A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 12A
Case: TO220FP
Gate current: 50mA
Max. forward impulse current: 100A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1000 Stücke
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BTA312Y-800C,127 BTA312Y-800C,127 WeEn Semiconductors bta312y-800c.pdf Category: Triacs
Description: Triac; 800V; 12A; TO220AB; Igt: 35mA; Ifsm: 100A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 12A
Case: TO220AB
Gate current: 35mA
Max. forward impulse current: 100A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
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WNSC2M20120R6Q WeEn Semiconductors WNSC2M20120R.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 94A; Idm: 200A; 750W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 94A
Pulsed drain current: 200A
Power dissipation: 750W
Case: TO247-4
Gate-source voltage: -12...22V
On-state resistance: 20mΩ
Mounting: THT
Gate charge: 32nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
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BYC58X-600,127 BYC58X-600,127 WeEn Semiconductors BYC58X-600.pdf BYC58X-600.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8A; tube; Ifsm: 120A; SOD113,TO220FP-2
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 8A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 120A
Case: SOD113; TO220FP-2
Max. forward voltage: 2.4V
Reverse recovery time: 21ns
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57+1.5 EUR
66+1.3 EUR
100+1.12 EUR
500+1.06 EUR
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BT136-800E.127 BT136-800E.127 WeEn Semiconductors BT136-800E.pdf _ween_psg2020.pdf Category: Triacs
Description: Triac; 800V; 4A; TO220AB; Igt: 10/25mA; Ifsm: 25A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 4A
Case: TO220AB
Gate current: 10/25mA
Mounting: THT
Kind of package: tube
Features of semiconductor devices: sensitive gate
Max. forward impulse current: 25A
Technology: 4Q
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BUJ103A,127 BUJ103A,127 WeEn Semiconductors Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 400V; 4A; 80W; TO220AB
Polarisation: bipolar
Case: TO220AB
Type of transistor: NPN
Kind of package: tube
Mounting: THT
Collector current: 4A
Current gain: 12...32
Power dissipation: 80W
Collector-emitter voltage: 400V
Produkt ist nicht verfügbar
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BUJ103AD,118 WeEn Semiconductors BUJ103AD.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 400V; 4A; 80W; DPAK
Polarisation: bipolar
Case: DPAK
Type of transistor: NPN
Kind of package: reel; tape
Mounting: SMD
Collector current: 4A
Current gain: 12...32
Power dissipation: 80W
Collector-emitter voltage: 400V
Produkt ist nicht verfügbar
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BUJ103AX,127 BUJ103AX,127 WeEn Semiconductors BUJ103AX.pdf Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 400V; 4A; 26W; TO220FP
Polarisation: bipolar
Case: TO220FP
Type of transistor: NPN
Kind of package: tube
Mounting: THT
Collector current: 4A
Current gain: 12...32
Power dissipation: 26W
Collector-emitter voltage: 400V
Produkt ist nicht verfügbar
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SMDJ33AJ WeEn Semiconductors SMDJ Series.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 36.98÷40.3V; 56.3A; unidirectional; SMC; reel,tape
Type of diode: TVS
Semiconductor structure: unidirectional
Mounting: SMD
Kind of package: reel; tape
Max. off-state voltage: 33V
Breakdown voltage: 36.98...40.3V
Max. forward impulse current: 56.3A
Manufacturer series: SMDJ
Peak pulse power dissipation: 3kW
Case: SMC
Leakage current: 1µA
Produkt ist nicht verfügbar
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WMSC008H12B1P6T WeEn Semiconductors WMSC008H12B1P6T.pdf Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 153A; Press-in PCB; 244W
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 153A
Topology: MOSFET half-bridge; NTC thermistor
Electrical mounting: Press-in PCB
On-state resistance: 8mΩ
Pulsed drain current: 300A
Power dissipation: 244W
Technology: SiC
Gate-source voltage: -4...18V
Mechanical mounting: screw
Produkt ist nicht verfügbar
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BT153B-1200TJ WeEn Semiconductors BT153B-1200T.pdf Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 47A; 30A; Igt: 50mA; D2PAK; SMD; reel,tape
Type of thyristor: thyristor
Max. off-state voltage: 1.2kV
Max. load current: 47A
Load current: 30A
Gate current: 50mA
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 350A
Turn-on time: 2µs
Produkt ist nicht verfügbar
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BT153B-1200T-AJ WeEn Semiconductors _ween_psg2020.pdf BT153B-1200T-A.pdf Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 47A; 30A; Igt: 50mA; D2PAK; SMD; reel,tape
Type of thyristor: thyristor
Max. off-state voltage: 1.2kV
Max. load current: 47A
Load current: 30A
Gate current: 50mA
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 350A
Turn-on time: 2µs
Application: automotive industry
Produkt ist nicht verfügbar
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BYQ28E-200E,127 BYQ28E-200E,127 WeEn Semiconductors byq28e-200e.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 5Ax2; tube; Ifsm: 55A; SOT78,TO220AB
Type of diode: rectifying
Max. forward impulse current: 55A
Semiconductor structure: common cathode; double
Mounting: THT
Case: SOT78; TO220AB
Max. off-state voltage: 200V
Kind of package: tube
Heatsink thickness: 1.25...1.4mm
Reverse recovery time: 25ns
Max. forward voltage: 0.895V
Load current: 5A x2
Features of semiconductor devices: ultrafast switching
Max. load current: 10A
auf Bestellung 132 Stücke:
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96+0.89 EUR
127+0.68 EUR
132+0.64 EUR
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BYC5D-500,127 BYC5D-500,127 WeEn Semiconductors PHGLS23037-1.pdf?t.download=true&u=5oefqw Category: THT universal diodes
Description: Diode: rectifying; THT; 500V; 5A; tube; Ifsm: 44A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 500V
Load current: 5A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 44A
Case: SOD59; TO220AC
Max. forward voltage: 1.45V
Reverse recovery time: 16ns
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110+0.77 EUR
136+0.63 EUR
250+0.57 EUR
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BT151X-500C,127 BT151X-500C,127 WeEn Semiconductors BT151X-500C-127.pdf Category: SMD/THT thyristors
Description: Thyristor; 500V; Ifmax: 12A; 7.5A; Igt: 2mA; TO220FP; THT; tube; 2us
Type of thyristor: thyristor
Max. off-state voltage: 500V
Max. load current: 12A
Load current: 7.5A
Gate current: 2mA
Case: TO220FP
Mounting: THT
Kind of package: tube
Max. forward impulse current: 100A
Turn-on time: 2µs
Produkt ist nicht verfügbar
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BYV72EW-200,127 BYV72EW-200,127 WeEn Semiconductors byv72ew-200.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 15Ax2; tube; Ifsm: 185A; TO247-3; 28ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 15A x2
Semiconductor structure: common cathode; double
Kind of package: tube
Max. forward impulse current: 185A
Case: TO247-3
Max. forward voltage: 1.2V
Max. load current: 30A
Reverse recovery time: 28ns
auf Bestellung 1789 Stücke:
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36+2.37 EUR
63+1.36 EUR
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BTA316X-800C/L03Q WeEn Semiconductors BTA316X-800C.pdf Category: Triacs
Description: Triac; 800V; 16A; TO220FP; Igt: 35mA; Ifsm: 150A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: TO220FP
Gate current: 35mA
Max. forward impulse current: 150A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
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ESDALD05UE2X ESDALD05UE2X WeEn Semiconductors ESDALD05UE2.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; 4A; 60W; unidirectional; ESD; SOT23-3; Ch: 2; LD
Application: HDMI; USB
Peak pulse power dissipation: 60W
Case: SOT23-3
Version: ESD
Manufacturer series: LD
Kind of package: reel; tape
Mounting: SMD
Type of diode: TVS array
Leakage current: 0.1µA
Number of channels: 2
Max. forward impulse current: 4A
Max. off-state voltage: 5V
Breakdown voltage: 6V
Semiconductor structure: unidirectional
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ESDALD05UG4X WeEn Semiconductors ESDALD05UG4.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; 4A; 60W; unidirectional; ESD; DFN2510; Ch: 4; LD
Application: HDMI; USB
Peak pulse power dissipation: 60W
Case: DFN2510
Version: ESD
Manufacturer series: LD
Kind of package: reel; tape
Mounting: SMD
Type of diode: TVS array
Leakage current: 0.1µA
Number of channels: 4
Max. forward impulse current: 4A
Max. off-state voltage: 5V
Breakdown voltage: 6V
Semiconductor structure: unidirectional
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BTA140-800.127 BTA140-800.127 WeEn Semiconductors BTA140-800.pdf _ween_psg2020.pdf Category: Triacs
Description: Triac; 800V; 25A; TO220AB; Igt: 35/70mA; Ifsm: 190A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 25A
Case: TO220AB
Gate current: 35/70mA
Max. forward impulse current: 190A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
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WNC3060D45160WQ WNC3060D45160WQ WeEn Semiconductors _ween_psg2020.pdf WNC3060D45160WQ.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 270A; TO247-3; 29ns
Semiconductor structure: common cathode; double
Mounting: THT
Type of diode: rectifying
Case: TO247-3
Reverse recovery time: 29ns
Max. forward voltage: 1.38V
Load current: 30A
Max. forward impulse current: 270A
Max. off-state voltage: 0.6kV
Kind of package: tube
Features of semiconductor devices: bypass diode; ultrafast switching
Produkt ist nicht verfügbar
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WNSC2M40120B76J WeEn Semiconductors WNSC2M40120B76J.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 61A; Idm: 170A; 500W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 61A
Pulsed drain current: 170A
Power dissipation: 500W
Case: TO263-7
Gate-source voltage: -4...18V
On-state resistance: 56mΩ
Mounting: SMD
Gate charge: 115nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Produkt ist nicht verfügbar
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BYQ28X-200,127 BYQ28X-200,127 WeEn Semiconductors byq28x-200.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 5Ax2; tube; Ifsm: 55A; Ufmax: 1.25V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 5A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 55A
Case: SOD113; TO220FP-2
Max. forward voltage: 1.25V
Max. load current: 10A
Reverse recovery time: 25ns
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1000 Stücke
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BT136X-800,127 BT136X-800,127 WeEn Semiconductors BT136X-800.pdf Category: Triacs
Description: Triac; 800V; 4A; TO220FP; Igt: 35/70mA; Ifsm: 25A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 4A
Case: TO220FP
Gate current: 35/70mA
Max. forward impulse current: 25A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1000 Stücke
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BUJ302AD,118 BUJ302AD,118 WeEn Semiconductors buj302ad.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 400V; 4A; 80W; DPAK
Mounting: SMD
Type of transistor: NPN
Kind of package: reel; tape
Collector current: 4A
Current gain: 25...50
Power dissipation: 80W
Collector-emitter voltage: 400V
Polarisation: bipolar
Case: DPAK
auf Bestellung 314 Stücke:
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129+0.67 EUR
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BUJ302A,127 BUJ302A,127 WeEn Semiconductors PHGLS22628-1.pdf?t.download=true&u=5oefqw Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 400V; 4A; 80W; TO220AB
Mounting: THT
Type of transistor: NPN
Kind of package: tube
Collector current: 4A
Current gain: 25...50
Power dissipation: 80W
Collector-emitter voltage: 400V
Polarisation: bipolar
Case: TO220AB
auf Bestellung 134 Stücke:
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BUJ302AX,127 BUJ302AX,127 WeEn Semiconductors buj302ax.pdf Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 400V; 4A; 26W; TO220FP
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 400V
Collector current: 4A
Power dissipation: 26W
Case: TO220FP
Current gain: 25...50
Mounting: THT
Kind of package: tube
auf Bestellung 1000 Stücke:
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85+1 EUR
117+0.73 EUR
145+0.6 EUR
161+0.54 EUR
182+0.46 EUR
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WND35P08XQ WeEn Semiconductors WND35P08XQ.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 35A; tube; Ifsm: 400A; Ufmax: 1.35V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.8kV
Load current: 35A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 0.4kA
Case: SOD113; TO220FP-2
Max. forward voltage: 1.35V
Produkt ist nicht verfügbar
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BT258-500R,127 BT258-500R.pdf
BT258-500R,127
Hersteller: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 500V; Ifmax: 8A; 5A; Igt: 200uA; TO220AB; THT; tube; 2us
Type of thyristor: thyristor
Max. off-state voltage: 500V
Max. load current: 8A
Load current: 5A
Gate current: 0.2mA
Case: TO220AB
Mounting: THT
Kind of package: tube
Max. forward impulse current: 75A
Turn-on time: 2µs
auf Bestellung 984 Stücke:
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73+1.18 EUR
89+0.96 EUR
119+0.71 EUR
500+0.6 EUR
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BT138-800E.127 BT138-800E.pdf _ween_psg2020.pdf
BT138-800E.127
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 12A; TO220AB; Igt: 10/25mA; Ifsm: 95A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 12A
Case: TO220AB
Gate current: 10/25mA
Mounting: THT
Kind of package: tube
Features of semiconductor devices: sensitive gate
Max. forward impulse current: 95A
Technology: 4Q
Produkt ist nicht verfügbar
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MCR08BT1,115 MCR08BT1.pdf _ween_psg2020.pdf
MCR08BT1,115
Hersteller: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 200V; Ifmax: 0.8A; 0.5A; Igt: 50uA; SOT223; SMD; reel,tape
Kind of package: reel; tape
Case: SOT223
Mounting: SMD
Turn-on time: 2µs
Gate current: 50µA
Load current: 0.5A
Max. load current: 0.8A
Max. forward impulse current: 8A
Max. off-state voltage: 200V
Type of thyristor: thyristor
auf Bestellung 1721 Stücke:
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143+0.6 EUR
169+0.5 EUR
274+0.31 EUR
500+0.21 EUR
1000+0.18 EUR
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WNS20H100CBJ WNS20H100CB.pdf
WNS20H100CBJ
Hersteller: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 100V; 10Ax2; reel,tape
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.7V
Max. load current: 20A
Max. forward impulse current: 180A
Kind of package: reel; tape
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65+1.33 EUR
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131+0.65 EUR
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BT1308W-400D,115 bt1308w-400d.pdf
BT1308W-400D,115
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 400V; 0.8A; SOT223; Igt: 5/7mA; Ifsm: 9A; 4Q; sensitive gate
Mounting: SMD
Kind of package: reel; tape
Case: SOT223
Features of semiconductor devices: sensitive gate
Type of thyristor: triac
Gate current: 5/7mA
Max. load current: 0.8A
Max. forward impulse current: 9A
Max. off-state voltage: 0.4kV
Technology: 4Q
auf Bestellung 1008 Stücke:
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136+0.63 EUR
177+0.48 EUR
285+0.3 EUR
345+0.25 EUR
500+0.21 EUR
1000+0.19 EUR
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BT1308W-600D,115 BT1308W-600D.pdf _ween_psg2020.pdf
BT1308W-600D,115
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 0.8A; SOT223; Igt: 5/7mA; Ifsm: 9A; 4Q; sensitive gate
Mounting: SMD
Kind of package: reel; tape
Case: SOT223
Features of semiconductor devices: sensitive gate
Type of thyristor: triac
Gate current: 5/7mA
Max. load current: 0.8A
Max. forward impulse current: 9A
Max. off-state voltage: 0.6kV
Technology: 4Q
auf Bestellung 482 Stücke:
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143+0.6 EUR
186+0.46 EUR
217+0.39 EUR
360+0.24 EUR
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BTA312-800CT,127 bta312-800ct.pdf
BTA312-800CT,127
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 12A; TO220AB; Igt: 35mA; Ifsm: 100A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 12A
Case: TO220AB
Gate current: 35mA
Max. forward impulse current: 100A
Technology: 3Q; Hi-Com
Features of semiconductor devices: high temperature; sensitive gate
Mounting: THT
Kind of package: tube
auf Bestellung 1762 Stücke:
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80+1.07 EUR
92+0.93 EUR
104+0.82 EUR
116+0.74 EUR
120+0.71 EUR
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BTA312B-800ET,118 BTA312B-800ET.PDF
BTA312B-800ET,118
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 12A; D2PAK; Igt: 10mA; Ifsm: 100A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 12A
Case: D2PAK
Gate current: 10mA
Max. forward impulse current: 100A
Technology: 3Q; Hi-Com
Features of semiconductor devices: high temperature; sensitive gate
Mounting: SMD
Kind of package: reel; tape
auf Bestellung 779 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
80+1.07 EUR
98+0.87 EUR
109+0.79 EUR
124+0.69 EUR
Mindestbestellmenge: 80 Stücke
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BTA312X-800CTQ BTA312X-800CT.pdf _ween_psg2020.pdf
BTA312X-800CTQ
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 12A; TO220FP; Igt: 35mA; Ifsm: 100A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 12A
Case: TO220FP
Gate current: 35mA
Max. forward impulse current: 100A
Technology: 3Q; Hi-Com
Features of semiconductor devices: high temperature; sensitive gate
Mounting: THT
Kind of package: tube
auf Bestellung 719 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
81+1.06 EUR
103+0.83 EUR
117+0.73 EUR
130+0.65 EUR
250+0.63 EUR
Mindestbestellmenge: 81 Stücke
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BTA312B-800B,118 bta312b-800b.pdf
BTA312B-800B,118
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 12A; D2PAK; Igt: 50mA; Ifsm: 100A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 12A
Case: D2PAK
Gate current: 50mA
Max. forward impulse current: 100A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
auf Bestellung 751 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
74+1.15 EUR
82+1.05 EUR
93+0.92 EUR
102+0.84 EUR
Mindestbestellmenge: 74 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BTA312Y-600C,127 bta312y-600c.pdf _ween_psg2020.pdf
BTA312Y-600C,127
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 12A; TO220AB; Igt: 35mA; Ifsm: 100A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: TO220AB
Gate current: 35mA
Max. forward impulse current: 100A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
auf Bestellung 309 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
37+2.31 EUR
57+1.51 EUR
73+1.18 EUR
100+1.07 EUR
250+0.93 EUR
Mindestbestellmenge: 37 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BTA312-800B,127 bta312-800b.pdf
BTA312-800B,127
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 12A; TO220AB; Igt: 50mA; Ifsm: 100A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 12A
Case: TO220AB
Gate current: 50mA
Max. forward impulse current: 100A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
auf Bestellung 599 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
88+0.98 EUR
96+0.89 EUR
107+0.8 EUR
121+0.7 EUR
500+0.67 EUR
Mindestbestellmenge: 88 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BTA312-600CT,127 _ween_psg2020.pdf
BTA312-600CT,127
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 12A; TO220AB; Igt: 35mA; Ifsm: 100A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: TO220AB
Gate current: 35mA
Max. forward impulse current: 100A
Technology: 3Q; Hi-Com
Features of semiconductor devices: high temperature; sensitive gate
Mounting: THT
Kind of package: tube
auf Bestellung 380 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
66+1.3 EUR
80+1.07 EUR
100+0.86 EUR
Mindestbestellmenge: 66 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BTA312X-600D,127 bta312x-600d.pdf
BTA312X-600D,127
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 12A; TO220FP; Igt: 5mA; Ifsm: 100A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: TO220FP
Gate current: 5mA
Max. forward impulse current: 100A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
auf Bestellung 652 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
68+1.26 EUR
97+0.88 EUR
118+0.73 EUR
500+0.62 EUR
Mindestbestellmenge: 68 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BTA312B-600D,118 _ween_psg2020.pdf
BTA312B-600D,118
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 12A; D2PAK; Igt: 5mA; Ifsm: 100A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: D2PAK
Gate current: 5mA
Max. forward impulse current: 100A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
auf Bestellung 800 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
42+2.06 EUR
60+1.43 EUR
100+1.15 EUR
500+0.98 EUR
800+0.92 EUR
Mindestbestellmenge: 42 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BTA312B-800C,118 bta312b-800c.pdf
BTA312B-800C,118
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 12A; D2PAK; Igt: 35mA; Ifsm: 100A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 12A
Case: D2PAK
Gate current: 35mA
Max. forward impulse current: 100A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
auf Bestellung 775 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
45+1.93 EUR
67+1.27 EUR
100+0.95 EUR
500+0.73 EUR
Mindestbestellmenge: 45 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BTA312B-600CT,118 BTA312B-600CT.pdf _ween_psg2020.pdf
BTA312B-600CT,118
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 12A; D2PAK; Igt: 35mA; Ifsm: 100A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: D2PAK
Gate current: 35mA
Max. forward impulse current: 100A
Technology: 3Q; Hi-Com
Features of semiconductor devices: high temperature; sensitive gate
Mounting: SMD
Kind of package: reel; tape
auf Bestellung 478 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
38+2.25 EUR
60+1.44 EUR
100+0.98 EUR
250+0.87 EUR
Mindestbestellmenge: 38 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BTA312B-800E,118 bta312b-600e.pdf
BTA312B-800E,118
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 12A; D2PAK; Igt: 10mA; Ifsm: 100A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 12A
Case: D2PAK
Gate current: 10mA
Max. forward impulse current: 100A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
auf Bestellung 84 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
63+1.36 EUR
75+1.15 EUR
Mindestbestellmenge: 63 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BTA312X-800B,127 bta312x-800b.pdf
BTA312X-800B,127
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 12A; TO220FP; Igt: 50mA; Ifsm: 100A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 12A
Case: TO220FP
Gate current: 50mA
Max. forward impulse current: 100A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTA312X-800C,127 bta312x-800c.pdf
BTA312X-800C,127
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 12A; TO220FP; Igt: 35mA; Ifsm: 100A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 12A
Case: TO220FP
Gate current: 35mA
Max. forward impulse current: 100A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BTA312-800E,127 BTA312-600E.pdf
BTA312-800E,127
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 12A; TO220AB; Igt: 10mA; Ifsm: 100A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 12A
Case: TO220AB
Gate current: 10mA
Max. forward impulse current: 100A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTA312-800ET,127 bta312-800et.pdf
BTA312-800ET,127
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 12A; TO220AB; Igt: 10mA; Ifsm: 100A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 12A
Case: TO220AB
Gate current: 10mA
Max. forward impulse current: 100A
Technology: 3Q; Hi-Com
Features of semiconductor devices: high temperature; sensitive gate
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BTA312B-600C,118 bta312b-600c.pdf
BTA312B-600C,118
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 12A; D2PAK; Igt: 35mA; Ifsm: 100A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: D2PAK
Gate current: 35mA
Max. forward impulse current: 100A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTA312-600C,127 PHGLS30272-1.pdf?t.download=true&u=5oefqw bta312-600c.pdf
BTA312-600C,127
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 12A; TO220AB; Igt: 35mA; Ifsm: 100A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: TO220AB
Gate current: 35mA
Max. forward impulse current: 100A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTA312-600D,127 BTA312-600D.pdf _ween_psg2020.pdf
BTA312-600D,127
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 12A; TO220AB; Igt: 5mA; Ifsm: 100A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: TO220AB
Gate current: 5mA
Max. forward impulse current: 100A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTA312B-600E,118 bta312b-600e.pdf
BTA312B-600E,118
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 12A; D2PAK; Igt: 10mA; Ifsm: 100A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: D2PAK
Gate current: 10mA
Max. forward impulse current: 100A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTA312G-600CTQ _ween_psg2020.pdf
BTA312G-600CTQ
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 12A; I2PAK; Igt: 35mA; Ifsm: 100A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: I2PAK
Gate current: 35mA
Max. forward impulse current: 100A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTA312X-800E,127 bta312x-800e.pdf
BTA312X-800E,127
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 12A; TO220FP; Igt: 10mA; Ifsm: 100A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 12A
Case: TO220FP
Gate current: 10mA
Max. forward impulse current: 100A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTA312-600E,127 BTA312-600E.pdf
BTA312-600E,127
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 12A; TO220AB; Igt: 10mA; Ifsm: 100A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: TO220AB
Gate current: 10mA
Max. forward impulse current: 100A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTA312-800C,127 bta312-800c.pdf
BTA312-800C,127
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 12A; TO220AB; Igt: 35mA; Ifsm: 100A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 12A
Case: TO220AB
Gate current: 35mA
Max. forward impulse current: 100A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BTA312X-600C,127 BTA312X-600C.pdf
BTA312X-600C,127
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 12A; TO220FP; Igt: 35mA; Ifsm: 100A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: TO220FP
Gate current: 35mA
Max. forward impulse current: 100A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTA312X-600E,127 BTA312X-600E.pdf _ween_psg2020.pdf
BTA312X-600E,127
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 12A; TO220FP; Igt: 10mA; Ifsm: 100A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: TO220FP
Gate current: 10mA
Max. forward impulse current: 100A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTA312X-800B/DGQ BTA312X-800B.pdf _ween_psg2020.pdf
BTA312X-800B/DGQ
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 12A; TO220FP; Igt: 50mA; Ifsm: 100A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 12A
Case: TO220FP
Gate current: 50mA
Max. forward impulse current: 100A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BTA312Y-800C,127 bta312y-800c.pdf
BTA312Y-800C,127
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 12A; TO220AB; Igt: 35mA; Ifsm: 100A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 12A
Case: TO220AB
Gate current: 35mA
Max. forward impulse current: 100A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WNSC2M20120R6Q WNSC2M20120R.pdf
Hersteller: WeEn Semiconductors
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 94A; Idm: 200A; 750W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 94A
Pulsed drain current: 200A
Power dissipation: 750W
Case: TO247-4
Gate-source voltage: -12...22V
On-state resistance: 20mΩ
Mounting: THT
Gate charge: 32nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BYC58X-600,127 BYC58X-600.pdf BYC58X-600.pdf
BYC58X-600,127
Hersteller: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8A; tube; Ifsm: 120A; SOD113,TO220FP-2
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 8A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 120A
Case: SOD113; TO220FP-2
Max. forward voltage: 2.4V
Reverse recovery time: 21ns
auf Bestellung 943 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
49+1.77 EUR
57+1.5 EUR
66+1.3 EUR
100+1.12 EUR
500+1.06 EUR
Mindestbestellmenge: 49 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BT136-800E.127 BT136-800E.pdf _ween_psg2020.pdf
BT136-800E.127
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 4A; TO220AB; Igt: 10/25mA; Ifsm: 25A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 4A
Case: TO220AB
Gate current: 10/25mA
Mounting: THT
Kind of package: tube
Features of semiconductor devices: sensitive gate
Max. forward impulse current: 25A
Technology: 4Q
Produkt ist nicht verfügbar
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BUJ103A,127
BUJ103A,127
Hersteller: WeEn Semiconductors
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 400V; 4A; 80W; TO220AB
Polarisation: bipolar
Case: TO220AB
Type of transistor: NPN
Kind of package: tube
Mounting: THT
Collector current: 4A
Current gain: 12...32
Power dissipation: 80W
Collector-emitter voltage: 400V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BUJ103AD,118 BUJ103AD.pdf
Hersteller: WeEn Semiconductors
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 400V; 4A; 80W; DPAK
Polarisation: bipolar
Case: DPAK
Type of transistor: NPN
Kind of package: reel; tape
Mounting: SMD
Collector current: 4A
Current gain: 12...32
Power dissipation: 80W
Collector-emitter voltage: 400V
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BUJ103AX,127 BUJ103AX.pdf
BUJ103AX,127
Hersteller: WeEn Semiconductors
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 400V; 4A; 26W; TO220FP
Polarisation: bipolar
Case: TO220FP
Type of transistor: NPN
Kind of package: tube
Mounting: THT
Collector current: 4A
Current gain: 12...32
Power dissipation: 26W
Collector-emitter voltage: 400V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SMDJ33AJ SMDJ Series.pdf
Hersteller: WeEn Semiconductors
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 36.98÷40.3V; 56.3A; unidirectional; SMC; reel,tape
Type of diode: TVS
Semiconductor structure: unidirectional
Mounting: SMD
Kind of package: reel; tape
Max. off-state voltage: 33V
Breakdown voltage: 36.98...40.3V
Max. forward impulse current: 56.3A
Manufacturer series: SMDJ
Peak pulse power dissipation: 3kW
Case: SMC
Leakage current: 1µA
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMSC008H12B1P6T WMSC008H12B1P6T.pdf
Hersteller: WeEn Semiconductors
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 153A; Press-in PCB; 244W
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 153A
Topology: MOSFET half-bridge; NTC thermistor
Electrical mounting: Press-in PCB
On-state resistance: 8mΩ
Pulsed drain current: 300A
Power dissipation: 244W
Technology: SiC
Gate-source voltage: -4...18V
Mechanical mounting: screw
Produkt ist nicht verfügbar
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BT153B-1200TJ BT153B-1200T.pdf
Hersteller: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 47A; 30A; Igt: 50mA; D2PAK; SMD; reel,tape
Type of thyristor: thyristor
Max. off-state voltage: 1.2kV
Max. load current: 47A
Load current: 30A
Gate current: 50mA
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 350A
Turn-on time: 2µs
Produkt ist nicht verfügbar
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BT153B-1200T-AJ _ween_psg2020.pdf BT153B-1200T-A.pdf
Hersteller: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 47A; 30A; Igt: 50mA; D2PAK; SMD; reel,tape
Type of thyristor: thyristor
Max. off-state voltage: 1.2kV
Max. load current: 47A
Load current: 30A
Gate current: 50mA
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 350A
Turn-on time: 2µs
Application: automotive industry
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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BYQ28E-200E,127 byq28e-200e.pdf
BYQ28E-200E,127
Hersteller: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 5Ax2; tube; Ifsm: 55A; SOT78,TO220AB
Type of diode: rectifying
Max. forward impulse current: 55A
Semiconductor structure: common cathode; double
Mounting: THT
Case: SOT78; TO220AB
Max. off-state voltage: 200V
Kind of package: tube
Heatsink thickness: 1.25...1.4mm
Reverse recovery time: 25ns
Max. forward voltage: 0.895V
Load current: 5A x2
Features of semiconductor devices: ultrafast switching
Max. load current: 10A
auf Bestellung 132 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
63+1.36 EUR
96+0.89 EUR
127+0.68 EUR
132+0.64 EUR
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BYC5D-500,127 PHGLS23037-1.pdf?t.download=true&u=5oefqw
BYC5D-500,127
Hersteller: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 500V; 5A; tube; Ifsm: 44A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 500V
Load current: 5A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 44A
Case: SOD59; TO220AC
Max. forward voltage: 1.45V
Reverse recovery time: 16ns
auf Bestellung 847 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
93+0.92 EUR
110+0.77 EUR
136+0.63 EUR
250+0.57 EUR
500+0.54 EUR
Mindestbestellmenge: 93 Stücke
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BT151X-500C,127 BT151X-500C-127.pdf
BT151X-500C,127
Hersteller: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 500V; Ifmax: 12A; 7.5A; Igt: 2mA; TO220FP; THT; tube; 2us
Type of thyristor: thyristor
Max. off-state voltage: 500V
Max. load current: 12A
Load current: 7.5A
Gate current: 2mA
Case: TO220FP
Mounting: THT
Kind of package: tube
Max. forward impulse current: 100A
Turn-on time: 2µs
Produkt ist nicht verfügbar
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BYV72EW-200,127 byv72ew-200.pdf
BYV72EW-200,127
Hersteller: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 15Ax2; tube; Ifsm: 185A; TO247-3; 28ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 15A x2
Semiconductor structure: common cathode; double
Kind of package: tube
Max. forward impulse current: 185A
Case: TO247-3
Max. forward voltage: 1.2V
Max. load current: 30A
Reverse recovery time: 28ns
auf Bestellung 1789 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
36+2.37 EUR
63+1.36 EUR
Mindestbestellmenge: 36 Stücke
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BTA316X-800C/L03Q BTA316X-800C.pdf
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 16A; TO220FP; Igt: 35mA; Ifsm: 150A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: TO220FP
Gate current: 35mA
Max. forward impulse current: 150A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
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ESDALD05UE2X ESDALD05UE2.pdf
ESDALD05UE2X
Hersteller: WeEn Semiconductors
Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; 4A; 60W; unidirectional; ESD; SOT23-3; Ch: 2; LD
Application: HDMI; USB
Peak pulse power dissipation: 60W
Case: SOT23-3
Version: ESD
Manufacturer series: LD
Kind of package: reel; tape
Mounting: SMD
Type of diode: TVS array
Leakage current: 0.1µA
Number of channels: 2
Max. forward impulse current: 4A
Max. off-state voltage: 5V
Breakdown voltage: 6V
Semiconductor structure: unidirectional
Produkt ist nicht verfügbar
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ESDALD05UG4X ESDALD05UG4.pdf
Hersteller: WeEn Semiconductors
Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; 4A; 60W; unidirectional; ESD; DFN2510; Ch: 4; LD
Application: HDMI; USB
Peak pulse power dissipation: 60W
Case: DFN2510
Version: ESD
Manufacturer series: LD
Kind of package: reel; tape
Mounting: SMD
Type of diode: TVS array
Leakage current: 0.1µA
Number of channels: 4
Max. forward impulse current: 4A
Max. off-state voltage: 5V
Breakdown voltage: 6V
Semiconductor structure: unidirectional
Produkt ist nicht verfügbar
Mindestbestellmenge: 90000 Stücke
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BTA140-800.127 BTA140-800.pdf _ween_psg2020.pdf
BTA140-800.127
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 25A; TO220AB; Igt: 35/70mA; Ifsm: 190A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 25A
Case: TO220AB
Gate current: 35/70mA
Max. forward impulse current: 190A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
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WNC3060D45160WQ _ween_psg2020.pdf WNC3060D45160WQ.pdf
WNC3060D45160WQ
Hersteller: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 270A; TO247-3; 29ns
Semiconductor structure: common cathode; double
Mounting: THT
Type of diode: rectifying
Case: TO247-3
Reverse recovery time: 29ns
Max. forward voltage: 1.38V
Load current: 30A
Max. forward impulse current: 270A
Max. off-state voltage: 0.6kV
Kind of package: tube
Features of semiconductor devices: bypass diode; ultrafast switching
Produkt ist nicht verfügbar
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WNSC2M40120B76J WNSC2M40120B76J.pdf
Hersteller: WeEn Semiconductors
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 61A; Idm: 170A; 500W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 61A
Pulsed drain current: 170A
Power dissipation: 500W
Case: TO263-7
Gate-source voltage: -4...18V
On-state resistance: 56mΩ
Mounting: SMD
Gate charge: 115nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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BYQ28X-200,127 byq28x-200.pdf
BYQ28X-200,127
Hersteller: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 5Ax2; tube; Ifsm: 55A; Ufmax: 1.25V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 5A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 55A
Case: SOD113; TO220FP-2
Max. forward voltage: 1.25V
Max. load current: 10A
Reverse recovery time: 25ns
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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BT136X-800,127 BT136X-800.pdf
BT136X-800,127
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 4A; TO220FP; Igt: 35/70mA; Ifsm: 25A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 4A
Case: TO220FP
Gate current: 35/70mA
Max. forward impulse current: 25A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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BUJ302AD,118 buj302ad.pdf
BUJ302AD,118
Hersteller: WeEn Semiconductors
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 400V; 4A; 80W; DPAK
Mounting: SMD
Type of transistor: NPN
Kind of package: reel; tape
Collector current: 4A
Current gain: 25...50
Power dissipation: 80W
Collector-emitter voltage: 400V
Polarisation: bipolar
Case: DPAK
auf Bestellung 314 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
72+1.19 EUR
91+0.94 EUR
103+0.83 EUR
129+0.67 EUR
Mindestbestellmenge: 72 Stücke
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BUJ302A,127 PHGLS22628-1.pdf?t.download=true&u=5oefqw
BUJ302A,127
Hersteller: WeEn Semiconductors
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 400V; 4A; 80W; TO220AB
Mounting: THT
Type of transistor: NPN
Kind of package: tube
Collector current: 4A
Current gain: 25...50
Power dissipation: 80W
Collector-emitter voltage: 400V
Polarisation: bipolar
Case: TO220AB
auf Bestellung 134 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
85+1 EUR
117+0.73 EUR
134+0.63 EUR
Mindestbestellmenge: 85 Stücke
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BUJ302AX,127 buj302ax.pdf
BUJ302AX,127
Hersteller: WeEn Semiconductors
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 400V; 4A; 26W; TO220FP
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 400V
Collector current: 4A
Power dissipation: 26W
Case: TO220FP
Current gain: 25...50
Mounting: THT
Kind of package: tube
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
85+1 EUR
117+0.73 EUR
145+0.6 EUR
161+0.54 EUR
182+0.46 EUR
Mindestbestellmenge: 85 Stücke
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WND35P08XQ WND35P08XQ.pdf
Hersteller: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 35A; tube; Ifsm: 400A; Ufmax: 1.35V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.8kV
Load current: 35A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 0.4kA
Case: SOD113; TO220FP-2
Max. forward voltage: 1.35V
Produkt ist nicht verfügbar
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