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BTA312X-800CTQ BTA312X-800CTQ WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8A988BA181C79A143&compId=BTA312X-800CT.pdf?ci_sign=57ce1e0f3e6329d8447056078217d90072204b26 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36 Category: Triacs
Description: Triac; 800V; 12A; TO220FP; Igt: 35mA; Ifsm: 100A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 12A
Case: TO220FP
Gate current: 35mA
Max. forward impulse current: 100A
Technology: 3Q; Hi-Com
Features of semiconductor devices: high temperature; sensitive gate
Mounting: THT
Kind of package: tube
auf Bestellung 815 Stücke:
Lieferzeit 14-21 Tag (e)
81+0.89 EUR
103+0.7 EUR
117+0.61 EUR
130+0.55 EUR
250+0.53 EUR
Mindestbestellmenge: 81
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BTA312X-800E,127 BTA312X-800E,127 WeEn Semiconductors bta312x-800e.pdf Category: Triacs
Description: Triac; 800V; 12A; TO220FP; Igt: 10mA; Ifsm: 100A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 12A
Case: TO220FP
Gate current: 10mA
Max. forward impulse current: 100A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTA312Y-800C,127 BTA312Y-800C,127 WeEn Semiconductors bta312y-800c.pdf Category: Triacs
Description: Triac; 800V; 12A; TO220AB; Igt: 35mA; Ifsm: 100A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 12A
Case: TO220AB
Gate current: 35mA
Max. forward impulse current: 100A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
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BTA316X-600B,127 BTA316X-600B,127 WeEn Semiconductors bta316x-600b.pdf Category: Triacs
Description: Triac; 600V; 16A; TO220FP; Igt: 50mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: TO220FP
Gate current: 50mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
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BTA316X-600C,127 BTA316X-600C,127 WeEn Semiconductors bta316x-600c.pdf Category: Triacs
Description: Triac; 600V; 16A; TO220FP; Igt: 35mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: TO220FP
Gate current: 35mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
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BTA316X-600E,127 BTA316X-600E,127 WeEn Semiconductors BTA316X-600E.pdf _ween_psg2020.pdf Category: Triacs
Description: Triac; 600V; 16A; TO220FP; Igt: 10mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: TO220FP
Gate current: 10mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
auf Bestellung 411 Stücke:
Lieferzeit 14-21 Tag (e)
80+0.9 EUR
96+0.75 EUR
119+0.6 EUR
133+0.54 EUR
Mindestbestellmenge: 80
Im Einkaufswagen  Stück im Wert von  UAH
BTA316X-800B,127 BTA316X-800B,127 WeEn Semiconductors bta316x-800b.pdf Category: Triacs
Description: Triac; 800V; 16A; TO220FP; Igt: 50mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: TO220FP
Gate current: 50mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
auf Bestellung 313 Stücke:
Lieferzeit 14-21 Tag (e)
80+0.9 EUR
89+0.81 EUR
100+0.72 EUR
111+0.64 EUR
117+0.61 EUR
Mindestbestellmenge: 80
Im Einkaufswagen  Stück im Wert von  UAH
BTA316X-800B0,127 BTA316X-800B0,127 WeEn Semiconductors bta316x-800b0.pdf Category: Triacs
Description: Triac; 800V; 16A; TO220FP; Igt: 50mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: TO220FP
Gate current: 50mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
auf Bestellung 1745 Stücke:
Lieferzeit 14-21 Tag (e)
88+0.82 EUR
98+0.73 EUR
111+0.65 EUR
113+0.63 EUR
Mindestbestellmenge: 88
Im Einkaufswagen  Stück im Wert von  UAH
BTA316X-800C,127 BTA316X-800C,127 WeEn Semiconductors bta316x-800c.pdf Category: Triacs
Description: Triac; 800V; 16A; TO220FP; Igt: 35mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: TO220FP
Gate current: 35mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTA316X-800C/L03Q WeEn Semiconductors BTA316X-800C.pdf Category: Triacs
Description: Triac; 800V; 16A; TO220FP; Igt: 35mA; Ifsm: 150A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: TO220FP
Gate current: 35mA
Max. forward impulse current: 150A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTA316X-800E,127 BTA316X-800E,127 WeEn Semiconductors bta316x-800e.pdf Category: Triacs
Description: Triac; 800V; 16A; TO220FP; Igt: 10mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: TO220FP
Gate current: 10mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
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BTA316Y-800BTQ BTA316Y-800BTQ WeEn Semiconductors BTA316Y-800BT.pdf _ween_psg2020.pdf Category: Triacs
Description: Triac; 800V; 16A; TO220AB; Igt: 50mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: TO220AB
Gate current: 50mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: high temperature; sensitive gate
Mounting: THT
Kind of package: tube
auf Bestellung 1084 Stücke:
Lieferzeit 14-21 Tag (e)
90+0.8 EUR
105+0.69 EUR
118+0.61 EUR
121+0.59 EUR
Mindestbestellmenge: 90
Im Einkaufswagen  Stück im Wert von  UAH
BTA316Y-800CTQ BTA316Y-800CTQ WeEn Semiconductors BTA316Y-800CT.pdf _ween_psg2020.pdf Category: Triacs
Description: Triac; 800V; 16A; TO220AB; Igt: 35mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: TO220AB
Gate current: 35mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: high temperature; sensitive gate
Mounting: THT
Kind of package: tube
auf Bestellung 587 Stücke:
Lieferzeit 14-21 Tag (e)
90+0.8 EUR
119+0.6 EUR
Mindestbestellmenge: 90
Im Einkaufswagen  Stück im Wert von  UAH
BTA208X-600E,127 BTA208X-600E,127 WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36 Category: Triacs
Description: Triac; 600V; 8A; TO220FP; Igt: 10mA; Ifsm: 65A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 8A
Case: TO220FP
Gate current: 10mA
Max. forward impulse current: 65A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
auf Bestellung 963 Stücke:
Lieferzeit 14-21 Tag (e)
61+1.19 EUR
89+0.8 EUR
120+0.6 EUR
500+0.5 EUR
Mindestbestellmenge: 61
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BTA312B-600B,118 BTA312B-600B,118 WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB752F1ED782E2BFD0C8D48259&compId=BTA312B-600B.pdf?ci_sign=870cf4918b6f2f8fbba5f09911b00a270746ff02 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36 Category: Triacs
Description: Triac; 600V; 12A; D2PAK; Igt: 50mA; Ifsm: 100A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: D2PAK
Gate current: 50mA
Max. forward impulse current: 100A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
auf Bestellung 220 Stücke:
Lieferzeit 14-21 Tag (e)
45+1.6 EUR
65+1.11 EUR
100+0.77 EUR
Mindestbestellmenge: 45
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BTA312B-600C,118 BTA312B-600C,118 WeEn Semiconductors bta312b-600c.pdf Category: Triacs
Description: Triac; 600V; 12A; D2PAK; Igt: 35mA; Ifsm: 100A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: D2PAK
Gate current: 35mA
Max. forward impulse current: 100A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTA312B-600CT,118 BTA312B-600CT,118 WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB752F1ED782E2C245FD636259&compId=BTA312B-600CT.pdf?ci_sign=52150ff971a6e5c8c74bf315134af9c10257fc9b pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36 Category: Triacs
Description: Triac; 600V; 12A; D2PAK; Igt: 35mA; Ifsm: 100A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: D2PAK
Gate current: 35mA
Max. forward impulse current: 100A
Technology: 3Q; Hi-Com
Features of semiconductor devices: high temperature; sensitive gate
Mounting: SMD
Kind of package: reel; tape
auf Bestellung 478 Stücke:
Lieferzeit 14-21 Tag (e)
39+1.86 EUR
61+1.19 EUR
100+0.81 EUR
250+0.74 EUR
Mindestbestellmenge: 39
Im Einkaufswagen  Stück im Wert von  UAH
BTA312B-600D,118 BTA312B-600D,118 WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36 Category: Triacs
Description: Triac; 600V; 12A; D2PAK; Igt: 5mA; Ifsm: 100A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: D2PAK
Gate current: 5mA
Max. forward impulse current: 100A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
Produkt ist nicht verfügbar
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BTA312B-600E,118 BTA312B-600E,118 WeEn Semiconductors bta312b-600e.pdf Category: Triacs
Description: Triac; 600V; 12A; D2PAK; Igt: 10mA; Ifsm: 100A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: D2PAK
Gate current: 10mA
Max. forward impulse current: 100A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
Produkt ist nicht verfügbar
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BTA312G-600CTQ BTA312G-600CTQ WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36 Category: Triacs
Description: Triac; 600V; 12A; I2PAK; Igt: 35mA; Ifsm: 100A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: I2PAK
Gate current: 35mA
Max. forward impulse current: 100A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
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BTA312X-600B,127 BTA312X-600B,127 WeEn Semiconductors bta312x-600b.pdf Category: Triacs
Description: Triac; 600V; 12A; TO220FP; Igt: 50mA; Ifsm: 100A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: TO220FP
Gate current: 50mA
Max. forward impulse current: 100A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
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BTA312X-600C,127 BTA312X-600C,127 WeEn Semiconductors bta312x-600c.pdf Category: Triacs
Description: Triac; 600V; 12A; TO220FP; Igt: 35mA; Ifsm: 100A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: TO220FP
Gate current: 35mA
Max. forward impulse current: 100A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
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BTA312X-600D,127 BTA312X-600D,127 WeEn Semiconductors bta312x-600d.pdf Category: Triacs
Description: Triac; 600V; 12A; TO220FP; Igt: 5mA; Ifsm: 100A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: TO220FP
Gate current: 5mA
Max. forward impulse current: 100A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
auf Bestellung 684 Stücke:
Lieferzeit 14-21 Tag (e)
68+1.06 EUR
97+0.74 EUR
118+0.61 EUR
500+0.52 EUR
Mindestbestellmenge: 68
Im Einkaufswagen  Stück im Wert von  UAH
BTA312X-600E,127 BTA312X-600E,127 WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB82531EE986DF13CC8D91F8BF&compId=BTA312X-600E.pdf?ci_sign=8cf7abad5309b227883980882dbde67f507770a7 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36 Category: Triacs
Description: Triac; 600V; 12A; TO220FP; Igt: 10mA; Ifsm: 100A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: TO220FP
Gate current: 10mA
Max. forward impulse current: 100A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
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BTA312Y-600C,127 BTA312Y-600C,127 WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8B982160DBEB36143&compId=bta312y-600c.pdf?ci_sign=aabdb925ab35c70879bd8d472136134064ad9cbd pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36 Category: Triacs
Description: Triac; 600V; 12A; TO220AB; Igt: 35mA; Ifsm: 100A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: TO220AB
Gate current: 35mA
Max. forward impulse current: 100A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
auf Bestellung 352 Stücke:
Lieferzeit 14-21 Tag (e)
39+1.84 EUR
60+1.19 EUR
76+0.95 EUR
100+0.86 EUR
250+0.75 EUR
Mindestbestellmenge: 39
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BT145-800R,127 BT145-800R,127 WeEn Semiconductors bt145-800r.pdf Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 25A; 16A; Igt: 5mA; TO220AB; THT; tube; 2us
Type of thyristor: thyristor
Max. off-state voltage: 0.8kV
Max. load current: 25A
Load current: 16A
Gate current: 5mA
Case: TO220AB
Mounting: THT
Kind of package: tube
Max. forward impulse current: 0.3kA
Turn-on time: 2µs
Produkt ist nicht verfügbar
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BTA208X-800B,127 BTA208X-800B,127 WeEn Semiconductors bta208x-800b.pdf Category: Triacs
Description: Triac; 800V; 8A; TO220FP; Igt: 50mA; Ifsm: 65A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 8A
Case: TO220FP
Gate current: 50mA
Max. forward impulse current: 65A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
auf Bestellung 59 Stücke:
Lieferzeit 14-21 Tag (e)
59+1.22 EUR
Mindestbestellmenge: 59
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BTA208X-800E,127 BTA208X-800E,127 WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36 Category: Triacs
Description: Triac; 800V; 8A; TO220FP; Igt: 10mA; Ifsm: 65A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 8A
Case: TO220FP
Gate current: 10mA
Max. forward impulse current: 65A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
auf Bestellung 823 Stücke:
Lieferzeit 14-21 Tag (e)
105+0.69 EUR
121+0.59 EUR
133+0.54 EUR
152+0.47 EUR
250+0.44 EUR
Mindestbestellmenge: 105
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WNSC2D201200CWQ WNSC2D201200CWQ WeEn Semiconductors WNSC2D201200CW.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10Ax2; TO247-3; tube
Technology: SiC
Case: TO247-3
Mounting: THT
Kind of package: tube
Max. forward voltage: 1.65V
Load current: 10A x2
Max. load current: 20A
Max. forward impulse current: 72A
Max. off-state voltage: 1.2kV
Semiconductor structure: common cathode; double
Type of diode: Schottky rectifying
Produkt ist nicht verfügbar
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WNSC2D201200WQ WNSC2D201200WQ WeEn Semiconductors WNSC2D201200W.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; TO247-2; tube
Technology: SiC
Case: TO247-2
Mounting: THT
Kind of package: tube
Max. forward voltage: 2.1V
Load current: 20A
Max. forward impulse current: 125A
Max. off-state voltage: 1.2kV
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Produkt ist nicht verfügbar
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BTA225B-600B,118 BTA225B-600B,118 WeEn Semiconductors bta225-800b_0.pdf Category: Triacs
Description: Triac; 600V; 25A; D2PAK; Igt: 50mA; Ifsm: 190A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 25A
Case: D2PAK
Gate current: 50mA
Max. forward impulse current: 190A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
auf Bestellung 4819 Stücke:
Lieferzeit 14-21 Tag (e)
29+2.5 EUR
41+1.74 EUR
100+1.39 EUR
500+1.19 EUR
800+1.13 EUR
Mindestbestellmenge: 29
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SMBJ20AJ SMBJ20AJ WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA8DF4B0A7CA520D3&compId=SMBJ%20Series.pdf?ci_sign=c2e2639ad995680535099c30dd49aa24a201c471 Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 22.41÷24.28V; 18.6A; unidirectional; SMB; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 20V
Breakdown voltage: 22.41...24.28V
Max. forward impulse current: 18.6A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
auf Bestellung 510 Stücke:
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425+0.17 EUR
510+0.14 EUR
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BT158W-1200TQ BT158W-1200TQ WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BEF5BB8390B300C4&compId=BT158W-1200T.pdf?ci_sign=0be78cecbf191f580d41fd859d340d6ab23e9894 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36 Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 126A; 80A; Igt: 70mA; SOT429,TO247-3; THT
Max. off-state voltage: 1.2kV
Load current: 80A
Case: SOT429; TO247-3
Mounting: THT
Max. load current: 126A
Max. forward impulse current: 1.1kA
Kind of package: tube
Type of thyristor: thyristor
Turn-on time: 2µs
Gate current: 70mA
auf Bestellung 240 Stücke:
Lieferzeit 14-21 Tag (e)
11+7.05 EUR
13+5.91 EUR
30+4.62 EUR
90+4.12 EUR
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BT155W-1200T-AQ BT155W-1200T-AQ WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB82531EE984E3D517D43DF8BF&compId=BT155W-1200T-AQ.pdf?ci_sign=c4bc0c1fd7312891e3ce5b9c6d8fc8a176ee1c81 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36 Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 79A; 50A; Igt: 3mA; SOT429,TO247-3; THT
Max. off-state voltage: 1.2kV
Load current: 50A
Case: SOT429; TO247-3
Mounting: THT
Max. load current: 79A
Max. forward impulse current: 0.65kA
Kind of package: tube
Application: automotive industry
Type of thyristor: thyristor
Turn-on time: 2µs
Gate current: 3mA
auf Bestellung 156 Stücke:
Lieferzeit 14-21 Tag (e)
17+4.33 EUR
19+3.79 EUR
25+3.47 EUR
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BYV29-500.127 BYV29-500.127 WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB752F1ED782927DD10852E259&compId=BYV29-500.pdf?ci_sign=6d4f8c2dc96de48461cdca88e7800f331acfaeab pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36 Category: THT universal diodes
Description: Diode: rectifying; THT; 500V; 9A; tube; Ifsm: 110A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 500V
Load current: 9A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 110A
Case: SOD59; TO220AC
Max. forward voltage: 0.9V
Heatsink thickness: max. 1.3mm
Reverse recovery time: 60ns
Produkt ist nicht verfügbar
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BT138-800.127 BT138-800.127 WeEn Semiconductors BT138-800.pdf _ween_psg2020.pdf Category: Triacs
Description: Triac; 800V; 12A; TO220AB; Igt: 35/70mA; Ifsm: 95A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 12A
Case: TO220AB
Gate current: 35/70mA
Mounting: THT
Kind of package: tube
Technology: 4Q
Max. forward impulse current: 95A
Features of semiconductor devices: sensitive gate
Produkt ist nicht verfügbar
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BT137-600.127 BT137-600.127 WeEn Semiconductors BT137-600.pdf _ween_psg2020.pdf Category: Triacs
Description: Triac; 600V; 8A; TO220AB; Igt: 35/70mA; Ifsm: 65A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 8A
Case: TO220AB
Gate current: 35/70mA
Max. forward impulse current: 65A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
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BT137-800.127 BT137-800.127 WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB752F1ED782911337BBCF4259&compId=BT137-800.pdf?ci_sign=aea56d424bc4f3fa2aa1ddbd11ef61522575e165 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36 Category: Triacs
Description: Triac; 800V; 8A; TO220AB; Igt: 35/70mA; Ifsm: 65A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 8A
Case: TO220AB
Gate current: 35/70mA
Mounting: THT
Kind of package: tube
Technology: 4Q
Max. forward impulse current: 65A
Features of semiconductor devices: sensitive gate
Produkt ist nicht verfügbar
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BT139-600.127 BT139-600.127 WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB752F1ED78291CEDEE6554259&compId=BT139-600.pdf?ci_sign=7e38b3ee79c9fed25b529b7891041bacf08a60fd pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36 Category: Triacs
Description: Triac; 600V; 16A; TO220AB; Igt: 35/70mA; Ifsm: 155A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: TO220AB
Gate current: 35/70mA
Mounting: THT
Kind of package: tube
Technology: 4Q
Max. forward impulse current: 155A
Features of semiconductor devices: sensitive gate
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BT134-600E.127 BT134-600E.127 WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB752F1ED78290E1820008A259&compId=BT134-600E.pdf?ci_sign=b519900035b47ed00cea8adbde36afb6e018d99b pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36 Category: Triacs
Description: Triac; 600V; 4A; SIP3,SOT82; Igt: 10/25mA; Ifsm: 25A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: SIP3; SOT82
Gate current: 10/25mA
Mounting: THT
Kind of package: tube
Technology: 4Q
Max. forward impulse current: 25A
Features of semiconductor devices: sensitive gate
Produkt ist nicht verfügbar
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WNSC2D151200WQ WNSC2D151200WQ WeEn Semiconductors WNSC2D151200W.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15A; TO247-2; tube
Technology: SiC
Case: TO247-2
Mounting: THT
Kind of package: tube
Max. forward voltage: 1.95V
Load current: 15A
Max. forward impulse current: 102A
Max. off-state voltage: 1.2kV
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Produkt ist nicht verfügbar
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BT137X-800.127 BT137X-800.127 WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB752F1ED7829128487C3A8259&compId=BT137X-800.pdf?ci_sign=b9cbdc731775311365e000e4ca1a56829f489d0d pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36 Category: Triacs
Description: Triac; 800V; 8A; TO220FP; Igt: 35/70mA; Ifsm: 65A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 8A
Case: TO220FP
Gate current: 35/70mA
Max. forward impulse current: 65A
Technology: 4Q
Mounting: THT
Kind of package: tube
Features of semiconductor devices: sensitive gate
Produkt ist nicht verfügbar
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BT136-600 BT136-600 WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB752F1ED78290EB2BA9BE6259&compId=BT136-600.pdf?ci_sign=6c77c6b982881e43deeb51b3edb1a858751ff5f5 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36 Category: Triacs
Description: Triac; 600V; 4A; TO220AB; Igt: 35/70mA; Ifsm: 25A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: TO220AB
Gate current: 35/70mA
Mounting: THT
Kind of package: tube
Technology: 4Q
Max. forward impulse current: 25A
Features of semiconductor devices: sensitive gate
Produkt ist nicht verfügbar
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BT131-600 BT131-600 WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB752F1ED78290D888568D4259&compId=BT131-600.pdf?ci_sign=45a0d2be925eb7f2b5e1a8061c9649a2c35dca72 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36 description Category: Triacs
Description: Triac; 600V; 1A; TO92; Igt: 3/7mA; Ifsm: 12.5A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 1A
Case: TO92
Gate current: 3/7mA
Mounting: THT
Kind of package: bulk
Technology: 4Q
Max. forward impulse current: 12.5A
Features of semiconductor devices: sensitive gate
Produkt ist nicht verfügbar
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WNS40H100CBJ WNS40H100CBJ WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB90B41EDB9B89004606ABC0C7&compId=WNS40H100CB.pdf?ci_sign=961831982c9ddb562ec774f452b9d74d73f10f9e Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 100V; 20Ax2; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 20A x2
Semiconductor structure: common cathode; double
Case: D2PAK
Max. forward voltage: 0.68V
Max. load current: 40A
Max. forward impulse current: 380A
Kind of package: reel; tape
auf Bestellung 98 Stücke:
Lieferzeit 14-21 Tag (e)
34+2.16 EUR
52+1.38 EUR
Mindestbestellmenge: 34
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NXPSC04650B NXPSC04650B WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB752F1ED8808355243183EA18&compId=NXPSC04650B.pdf?ci_sign=2fe46987e1cc9423a6afd4be2cd0aa28fc50fd4e pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36 Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SiC; SMD; 650V; 4A; reel,tape
Semiconductor structure: single diode
Kind of package: reel; tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Load current: 4A
Max. forward voltage: 1.5V
Max. load current: 8A
Max. forward impulse current: 24A
Max. off-state voltage: 650V
Case: D2PAK
auf Bestellung 9 Stücke:
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9+7.95 EUR
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WNSC2D04650DJ WNSC2D04650DJ WeEn Semiconductors WNSC2D04650D.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SiC; SMD; 650V; 4A; reel,tape
Technology: SiC
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Max. forward voltage: 1.7V
Load current: 4A
Max. forward impulse current: 24A
Max. off-state voltage: 650V
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Produkt ist nicht verfügbar
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WNSC2D04650Q WeEn Semiconductors pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDB8D0705D960780D4&compId=WNSC2D04650Q.pdf?ci_sign=bcd58e96945379d399835a8c48f5d5874319942a Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220AC; Ufmax: 2.2V
Technology: SiC
Case: TO220AC
Mounting: THT
Kind of package: tube
Max. forward voltage: 2.2V
Load current: 4A
Max. load current: 8A
Max. forward impulse current: 24A
Max. off-state voltage: 650V
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Produkt ist nicht verfügbar
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WNSC2D04650TJ WeEn Semiconductors WNSC2D04650T.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN8x8N; SiC; SMD; 650V; 4A; reel,tape
Technology: SiC
Case: DFN8x8N
Mounting: SMD
Kind of package: reel; tape
Max. forward voltage: 1.7V
Load current: 4A
Max. forward impulse current: 24A
Max. off-state voltage: 650V
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Produkt ist nicht verfügbar
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WNSC2D04650XQ WNSC2D04650XQ WeEn Semiconductors Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220FP-2; tube
Technology: SiC
Case: TO220FP-2
Mounting: THT
Kind of package: tube
Max. forward voltage: 1.7V
Load current: 4A
Max. forward impulse current: 20A
Max. off-state voltage: 650V
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Produkt ist nicht verfügbar
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WG40N65DFJQ WeEn Semiconductors Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 15A; 26W; SOT1293,TO3PF
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 15A
Power dissipation: 26W
Case: SOT1293; TO3PF
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 173nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
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BT152B-1200TJ WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB281E1EDF93CBB109BA6FC0D6&compId=BT152B-1200T.pdf?ci_sign=756dcc01a8cfa37cf0faef7b98c85d9700042970 Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 31A; 20A; Igt: 35mA; D2PAK; SMD; reel,tape
Type of thyristor: thyristor
Max. off-state voltage: 1.2kV
Max. load current: 31A
Load current: 20A
Gate current: 35mA
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 250A
Turn-on time: 2µs
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WG50N65HFW1Q WeEn Semiconductors Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 227W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 227W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 138nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
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WTMH80T16RT WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB281E1EDF93CD1D27D29A80D6&compId=WTMH80T16RT.pdf?ci_sign=8217bcbfa29216c06ea12d905ff101eb7d3ce6f1 Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 80A; Ifmax: 125A; TO240AA
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 80A
Max. load current: 125A
Case: TO240AA
Max. forward voltage: 1.29V
Threshold on-voltage: 0.95V
Max. forward impulse current: 1.4kA
Gate current: 100mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
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BT155Z-1200TQ BT155Z-1200TQ WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BEF5A14375AD80C4&compId=BT155Z-1200T.pdf?ci_sign=da4f4f9ecf8e5cfccc64c6bda46fa187f39dd2c2 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36 Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 79A; 50A; Igt: 50mA; SOT1292,TOP3I; THT
Max. off-state voltage: 1.2kV
Load current: 50A
Case: SOT1292; TOP3I
Mounting: THT
Max. load current: 79A
Max. forward impulse current: 0.65kA
Kind of package: tube
Type of thyristor: thyristor
Turn-on time: 2µs
Gate current: 50mA
auf Bestellung 485 Stücke:
Lieferzeit 14-21 Tag (e)
21+3.47 EUR
26+2.83 EUR
27+2.7 EUR
90+2.29 EUR
Mindestbestellmenge: 21
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WNSC2D021200D6J WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB281E1EDF93E584D944DF20D6&compId=WNSC2D021200D6J.pdf?ci_sign=d6261fd7b0f83655de65a5e039306fe7b124e371 Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SiC; SMD; 1.2kV; 2A; reel,tape
Technology: SiC
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Max. forward voltage: 1.65V
Load current: 2A
Max. forward impulse current: 26A
Max. off-state voltage: 1.2kV
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Produkt ist nicht verfügbar
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WNSC2D051200D6J WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB281E1EDF93E5906FDDC0C0D6&compId=WNSC2D051200D6J.pdf?ci_sign=80c84dac35b55dc0462d2ea5379a10d827c08a22 Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SiC; SMD; 1.2kV; 5A; reel,tape
Technology: SiC
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Max. forward voltage: 1.6V
Load current: 5A
Max. load current: 10A
Max. forward impulse current: 45A
Max. off-state voltage: 1.2kV
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Produkt ist nicht verfügbar
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WNSC2D101200D6J WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB281E1EDF93E5998DB1E0A0D6&compId=WNSC2D101200D6J.pdf?ci_sign=bf48ebe83c665505a71c4440ee63a1d8fad27840 Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SiC; SMD; 1.2kV; 10A; reel,tape
Technology: SiC
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Max. forward voltage: 1.6V
Load current: 10A
Max. load current: 20A
Max. forward impulse current: 80A
Max. off-state voltage: 1.2kV
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Produkt ist nicht verfügbar
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WNSC2D201200CW6Q WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB281E1EDF93E67180955F60D6&compId=WNSC2D201200CW6Q.pdf?ci_sign=92383b216d2d5daed1994f8c6b0f95a12d5589c9 Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10Ax2; TO247-3; tube
Technology: SiC
Case: TO247-3
Mounting: THT
Kind of package: tube
Max. forward voltage: 1.65V
Load current: 10A x2
Max. load current: 20A
Max. forward impulse current: 80A
Max. off-state voltage: 1.2kV
Semiconductor structure: common cathode; double
Type of diode: Schottky rectifying
Produkt ist nicht verfügbar
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WSJM65R099DQ WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB281E1EDF93E35F3F2C7140D6&compId=WSJM65R099DQ.pdf?ci_sign=3a234b4c4562c2a8dca11ae94957239c205d3640 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; Idm: 128A; 240W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Pulsed drain current: 128A
Power dissipation: 240W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 99mΩ
Mounting: THT
Gate charge: 57nC
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
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BTA312X-800CTQ pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8A988BA181C79A143&compId=BTA312X-800CT.pdf?ci_sign=57ce1e0f3e6329d8447056078217d90072204b26 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36
BTA312X-800CTQ
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 12A; TO220FP; Igt: 35mA; Ifsm: 100A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 12A
Case: TO220FP
Gate current: 35mA
Max. forward impulse current: 100A
Technology: 3Q; Hi-Com
Features of semiconductor devices: high temperature; sensitive gate
Mounting: THT
Kind of package: tube
auf Bestellung 815 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
81+0.89 EUR
103+0.7 EUR
117+0.61 EUR
130+0.55 EUR
250+0.53 EUR
Mindestbestellmenge: 81
Im Einkaufswagen  Stück im Wert von  UAH
BTA312X-800E,127 bta312x-800e.pdf
BTA312X-800E,127
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 12A; TO220FP; Igt: 10mA; Ifsm: 100A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 12A
Case: TO220FP
Gate current: 10mA
Max. forward impulse current: 100A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTA312Y-800C,127 bta312y-800c.pdf
BTA312Y-800C,127
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 12A; TO220AB; Igt: 35mA; Ifsm: 100A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 12A
Case: TO220AB
Gate current: 35mA
Max. forward impulse current: 100A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTA316X-600B,127 bta316x-600b.pdf
BTA316X-600B,127
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 16A; TO220FP; Igt: 50mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: TO220FP
Gate current: 50mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTA316X-600C,127 bta316x-600c.pdf
BTA316X-600C,127
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 16A; TO220FP; Igt: 35mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: TO220FP
Gate current: 35mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTA316X-600E,127 BTA316X-600E.pdf _ween_psg2020.pdf
BTA316X-600E,127
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 16A; TO220FP; Igt: 10mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: TO220FP
Gate current: 10mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
auf Bestellung 411 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
80+0.9 EUR
96+0.75 EUR
119+0.6 EUR
133+0.54 EUR
Mindestbestellmenge: 80
Im Einkaufswagen  Stück im Wert von  UAH
BTA316X-800B,127 bta316x-800b.pdf
BTA316X-800B,127
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 16A; TO220FP; Igt: 50mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: TO220FP
Gate current: 50mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
auf Bestellung 313 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
80+0.9 EUR
89+0.81 EUR
100+0.72 EUR
111+0.64 EUR
117+0.61 EUR
Mindestbestellmenge: 80
Im Einkaufswagen  Stück im Wert von  UAH
BTA316X-800B0,127 bta316x-800b0.pdf
BTA316X-800B0,127
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 16A; TO220FP; Igt: 50mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: TO220FP
Gate current: 50mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
auf Bestellung 1745 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
88+0.82 EUR
98+0.73 EUR
111+0.65 EUR
113+0.63 EUR
Mindestbestellmenge: 88
Im Einkaufswagen  Stück im Wert von  UAH
BTA316X-800C,127 bta316x-800c.pdf
BTA316X-800C,127
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 16A; TO220FP; Igt: 35mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: TO220FP
Gate current: 35mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTA316X-800C/L03Q BTA316X-800C.pdf
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 16A; TO220FP; Igt: 35mA; Ifsm: 150A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: TO220FP
Gate current: 35mA
Max. forward impulse current: 150A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTA316X-800E,127 bta316x-800e.pdf
BTA316X-800E,127
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 16A; TO220FP; Igt: 10mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: TO220FP
Gate current: 10mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTA316Y-800BTQ BTA316Y-800BT.pdf _ween_psg2020.pdf
BTA316Y-800BTQ
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 16A; TO220AB; Igt: 50mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: TO220AB
Gate current: 50mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: high temperature; sensitive gate
Mounting: THT
Kind of package: tube
auf Bestellung 1084 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
90+0.8 EUR
105+0.69 EUR
118+0.61 EUR
121+0.59 EUR
Mindestbestellmenge: 90
Im Einkaufswagen  Stück im Wert von  UAH
BTA316Y-800CTQ BTA316Y-800CT.pdf _ween_psg2020.pdf
BTA316Y-800CTQ
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 16A; TO220AB; Igt: 35mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: TO220AB
Gate current: 35mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: high temperature; sensitive gate
Mounting: THT
Kind of package: tube
auf Bestellung 587 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
90+0.8 EUR
119+0.6 EUR
Mindestbestellmenge: 90
Im Einkaufswagen  Stück im Wert von  UAH
BTA208X-600E,127 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36
BTA208X-600E,127
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 8A; TO220FP; Igt: 10mA; Ifsm: 65A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 8A
Case: TO220FP
Gate current: 10mA
Max. forward impulse current: 65A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
auf Bestellung 963 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
61+1.19 EUR
89+0.8 EUR
120+0.6 EUR
500+0.5 EUR
Mindestbestellmenge: 61
Im Einkaufswagen  Stück im Wert von  UAH
BTA312B-600B,118 pVersion=0046&contRep=ZT&docId=005056AB752F1ED782E2BFD0C8D48259&compId=BTA312B-600B.pdf?ci_sign=870cf4918b6f2f8fbba5f09911b00a270746ff02 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36
BTA312B-600B,118
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 12A; D2PAK; Igt: 50mA; Ifsm: 100A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: D2PAK
Gate current: 50mA
Max. forward impulse current: 100A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
auf Bestellung 220 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
45+1.6 EUR
65+1.11 EUR
100+0.77 EUR
Mindestbestellmenge: 45
Im Einkaufswagen  Stück im Wert von  UAH
BTA312B-600C,118 bta312b-600c.pdf
BTA312B-600C,118
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 12A; D2PAK; Igt: 35mA; Ifsm: 100A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: D2PAK
Gate current: 35mA
Max. forward impulse current: 100A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTA312B-600CT,118 pVersion=0046&contRep=ZT&docId=005056AB752F1ED782E2C245FD636259&compId=BTA312B-600CT.pdf?ci_sign=52150ff971a6e5c8c74bf315134af9c10257fc9b pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36
BTA312B-600CT,118
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 12A; D2PAK; Igt: 35mA; Ifsm: 100A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: D2PAK
Gate current: 35mA
Max. forward impulse current: 100A
Technology: 3Q; Hi-Com
Features of semiconductor devices: high temperature; sensitive gate
Mounting: SMD
Kind of package: reel; tape
auf Bestellung 478 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
39+1.86 EUR
61+1.19 EUR
100+0.81 EUR
250+0.74 EUR
Mindestbestellmenge: 39
Im Einkaufswagen  Stück im Wert von  UAH
BTA312B-600D,118 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36
BTA312B-600D,118
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 12A; D2PAK; Igt: 5mA; Ifsm: 100A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: D2PAK
Gate current: 5mA
Max. forward impulse current: 100A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTA312B-600E,118 bta312b-600e.pdf
BTA312B-600E,118
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 12A; D2PAK; Igt: 10mA; Ifsm: 100A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: D2PAK
Gate current: 10mA
Max. forward impulse current: 100A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTA312G-600CTQ pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36
BTA312G-600CTQ
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 12A; I2PAK; Igt: 35mA; Ifsm: 100A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: I2PAK
Gate current: 35mA
Max. forward impulse current: 100A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTA312X-600B,127 bta312x-600b.pdf
BTA312X-600B,127
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 12A; TO220FP; Igt: 50mA; Ifsm: 100A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: TO220FP
Gate current: 50mA
Max. forward impulse current: 100A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTA312X-600C,127 bta312x-600c.pdf
BTA312X-600C,127
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 12A; TO220FP; Igt: 35mA; Ifsm: 100A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: TO220FP
Gate current: 35mA
Max. forward impulse current: 100A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTA312X-600D,127 bta312x-600d.pdf
BTA312X-600D,127
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 12A; TO220FP; Igt: 5mA; Ifsm: 100A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: TO220FP
Gate current: 5mA
Max. forward impulse current: 100A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
auf Bestellung 684 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
68+1.06 EUR
97+0.74 EUR
118+0.61 EUR
500+0.52 EUR
Mindestbestellmenge: 68
Im Einkaufswagen  Stück im Wert von  UAH
BTA312X-600E,127 pVersion=0046&contRep=ZT&docId=005056AB82531EE986DF13CC8D91F8BF&compId=BTA312X-600E.pdf?ci_sign=8cf7abad5309b227883980882dbde67f507770a7 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36
BTA312X-600E,127
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 12A; TO220FP; Igt: 10mA; Ifsm: 100A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: TO220FP
Gate current: 10mA
Max. forward impulse current: 100A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTA312Y-600C,127 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8B982160DBEB36143&compId=bta312y-600c.pdf?ci_sign=aabdb925ab35c70879bd8d472136134064ad9cbd pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36
BTA312Y-600C,127
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 12A; TO220AB; Igt: 35mA; Ifsm: 100A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: TO220AB
Gate current: 35mA
Max. forward impulse current: 100A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
auf Bestellung 352 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
39+1.84 EUR
60+1.19 EUR
76+0.95 EUR
100+0.86 EUR
250+0.75 EUR
Mindestbestellmenge: 39
Im Einkaufswagen  Stück im Wert von  UAH
BT145-800R,127 bt145-800r.pdf
BT145-800R,127
Hersteller: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 25A; 16A; Igt: 5mA; TO220AB; THT; tube; 2us
Type of thyristor: thyristor
Max. off-state voltage: 0.8kV
Max. load current: 25A
Load current: 16A
Gate current: 5mA
Case: TO220AB
Mounting: THT
Kind of package: tube
Max. forward impulse current: 0.3kA
Turn-on time: 2µs
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTA208X-800B,127 bta208x-800b.pdf
BTA208X-800B,127
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 8A; TO220FP; Igt: 50mA; Ifsm: 65A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 8A
Case: TO220FP
Gate current: 50mA
Max. forward impulse current: 65A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
auf Bestellung 59 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
59+1.22 EUR
Mindestbestellmenge: 59
Im Einkaufswagen  Stück im Wert von  UAH
BTA208X-800E,127 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36
BTA208X-800E,127
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 8A; TO220FP; Igt: 10mA; Ifsm: 65A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 8A
Case: TO220FP
Gate current: 10mA
Max. forward impulse current: 65A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
auf Bestellung 823 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
105+0.69 EUR
121+0.59 EUR
133+0.54 EUR
152+0.47 EUR
250+0.44 EUR
Mindestbestellmenge: 105
Im Einkaufswagen  Stück im Wert von  UAH
WNSC2D201200CWQ WNSC2D201200CW.pdf
WNSC2D201200CWQ
Hersteller: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10Ax2; TO247-3; tube
Technology: SiC
Case: TO247-3
Mounting: THT
Kind of package: tube
Max. forward voltage: 1.65V
Load current: 10A x2
Max. load current: 20A
Max. forward impulse current: 72A
Max. off-state voltage: 1.2kV
Semiconductor structure: common cathode; double
Type of diode: Schottky rectifying
Produkt ist nicht verfügbar
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WNSC2D201200WQ WNSC2D201200W.pdf
WNSC2D201200WQ
Hersteller: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; TO247-2; tube
Technology: SiC
Case: TO247-2
Mounting: THT
Kind of package: tube
Max. forward voltage: 2.1V
Load current: 20A
Max. forward impulse current: 125A
Max. off-state voltage: 1.2kV
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Produkt ist nicht verfügbar
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BTA225B-600B,118 bta225-800b_0.pdf
BTA225B-600B,118
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 25A; D2PAK; Igt: 50mA; Ifsm: 190A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 25A
Case: D2PAK
Gate current: 50mA
Max. forward impulse current: 190A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
auf Bestellung 4819 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
29+2.5 EUR
41+1.74 EUR
100+1.39 EUR
500+1.19 EUR
800+1.13 EUR
Mindestbestellmenge: 29
Im Einkaufswagen  Stück im Wert von  UAH
SMBJ20AJ pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA8DF4B0A7CA520D3&compId=SMBJ%20Series.pdf?ci_sign=c2e2639ad995680535099c30dd49aa24a201c471
SMBJ20AJ
Hersteller: WeEn Semiconductors
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 22.41÷24.28V; 18.6A; unidirectional; SMB; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 20V
Breakdown voltage: 22.41...24.28V
Max. forward impulse current: 18.6A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
auf Bestellung 510 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
425+0.17 EUR
510+0.14 EUR
Mindestbestellmenge: 425
Im Einkaufswagen  Stück im Wert von  UAH
BT158W-1200TQ pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BEF5BB8390B300C4&compId=BT158W-1200T.pdf?ci_sign=0be78cecbf191f580d41fd859d340d6ab23e9894 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36
BT158W-1200TQ
Hersteller: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 126A; 80A; Igt: 70mA; SOT429,TO247-3; THT
Max. off-state voltage: 1.2kV
Load current: 80A
Case: SOT429; TO247-3
Mounting: THT
Max. load current: 126A
Max. forward impulse current: 1.1kA
Kind of package: tube
Type of thyristor: thyristor
Turn-on time: 2µs
Gate current: 70mA
auf Bestellung 240 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
11+7.05 EUR
13+5.91 EUR
30+4.62 EUR
90+4.12 EUR
Mindestbestellmenge: 11
Im Einkaufswagen  Stück im Wert von  UAH
BT155W-1200T-AQ pVersion=0046&contRep=ZT&docId=005056AB82531EE984E3D517D43DF8BF&compId=BT155W-1200T-AQ.pdf?ci_sign=c4bc0c1fd7312891e3ce5b9c6d8fc8a176ee1c81 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36
BT155W-1200T-AQ
Hersteller: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 79A; 50A; Igt: 3mA; SOT429,TO247-3; THT
Max. off-state voltage: 1.2kV
Load current: 50A
Case: SOT429; TO247-3
Mounting: THT
Max. load current: 79A
Max. forward impulse current: 0.65kA
Kind of package: tube
Application: automotive industry
Type of thyristor: thyristor
Turn-on time: 2µs
Gate current: 3mA
auf Bestellung 156 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
17+4.33 EUR
19+3.79 EUR
25+3.47 EUR
Mindestbestellmenge: 17
Im Einkaufswagen  Stück im Wert von  UAH
BYV29-500.127 pVersion=0046&contRep=ZT&docId=005056AB752F1ED782927DD10852E259&compId=BYV29-500.pdf?ci_sign=6d4f8c2dc96de48461cdca88e7800f331acfaeab pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36
BYV29-500.127
Hersteller: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 500V; 9A; tube; Ifsm: 110A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 500V
Load current: 9A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 110A
Case: SOD59; TO220AC
Max. forward voltage: 0.9V
Heatsink thickness: max. 1.3mm
Reverse recovery time: 60ns
Produkt ist nicht verfügbar
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BT138-800.127 BT138-800.pdf _ween_psg2020.pdf
BT138-800.127
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 12A; TO220AB; Igt: 35/70mA; Ifsm: 95A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 12A
Case: TO220AB
Gate current: 35/70mA
Mounting: THT
Kind of package: tube
Technology: 4Q
Max. forward impulse current: 95A
Features of semiconductor devices: sensitive gate
Produkt ist nicht verfügbar
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BT137-600.127 BT137-600.pdf _ween_psg2020.pdf
BT137-600.127
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 8A; TO220AB; Igt: 35/70mA; Ifsm: 65A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 8A
Case: TO220AB
Gate current: 35/70mA
Max. forward impulse current: 65A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BT137-800.127 pVersion=0046&contRep=ZT&docId=005056AB752F1ED782911337BBCF4259&compId=BT137-800.pdf?ci_sign=aea56d424bc4f3fa2aa1ddbd11ef61522575e165 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36
BT137-800.127
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 8A; TO220AB; Igt: 35/70mA; Ifsm: 65A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 8A
Case: TO220AB
Gate current: 35/70mA
Mounting: THT
Kind of package: tube
Technology: 4Q
Max. forward impulse current: 65A
Features of semiconductor devices: sensitive gate
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BT139-600.127 pVersion=0046&contRep=ZT&docId=005056AB752F1ED78291CEDEE6554259&compId=BT139-600.pdf?ci_sign=7e38b3ee79c9fed25b529b7891041bacf08a60fd pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36
BT139-600.127
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 16A; TO220AB; Igt: 35/70mA; Ifsm: 155A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: TO220AB
Gate current: 35/70mA
Mounting: THT
Kind of package: tube
Technology: 4Q
Max. forward impulse current: 155A
Features of semiconductor devices: sensitive gate
Produkt ist nicht verfügbar
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BT134-600E.127 pVersion=0046&contRep=ZT&docId=005056AB752F1ED78290E1820008A259&compId=BT134-600E.pdf?ci_sign=b519900035b47ed00cea8adbde36afb6e018d99b pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36
BT134-600E.127
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 4A; SIP3,SOT82; Igt: 10/25mA; Ifsm: 25A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: SIP3; SOT82
Gate current: 10/25mA
Mounting: THT
Kind of package: tube
Technology: 4Q
Max. forward impulse current: 25A
Features of semiconductor devices: sensitive gate
Produkt ist nicht verfügbar
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WNSC2D151200WQ WNSC2D151200W.pdf
WNSC2D151200WQ
Hersteller: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15A; TO247-2; tube
Technology: SiC
Case: TO247-2
Mounting: THT
Kind of package: tube
Max. forward voltage: 1.95V
Load current: 15A
Max. forward impulse current: 102A
Max. off-state voltage: 1.2kV
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BT137X-800.127 pVersion=0046&contRep=ZT&docId=005056AB752F1ED7829128487C3A8259&compId=BT137X-800.pdf?ci_sign=b9cbdc731775311365e000e4ca1a56829f489d0d pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36
BT137X-800.127
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 8A; TO220FP; Igt: 35/70mA; Ifsm: 65A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 8A
Case: TO220FP
Gate current: 35/70mA
Max. forward impulse current: 65A
Technology: 4Q
Mounting: THT
Kind of package: tube
Features of semiconductor devices: sensitive gate
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BT136-600 pVersion=0046&contRep=ZT&docId=005056AB752F1ED78290EB2BA9BE6259&compId=BT136-600.pdf?ci_sign=6c77c6b982881e43deeb51b3edb1a858751ff5f5 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36
BT136-600
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 4A; TO220AB; Igt: 35/70mA; Ifsm: 25A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: TO220AB
Gate current: 35/70mA
Mounting: THT
Kind of package: tube
Technology: 4Q
Max. forward impulse current: 25A
Features of semiconductor devices: sensitive gate
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BT131-600 description pVersion=0046&contRep=ZT&docId=005056AB752F1ED78290D888568D4259&compId=BT131-600.pdf?ci_sign=45a0d2be925eb7f2b5e1a8061c9649a2c35dca72 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36
BT131-600
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 1A; TO92; Igt: 3/7mA; Ifsm: 12.5A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 1A
Case: TO92
Gate current: 3/7mA
Mounting: THT
Kind of package: bulk
Technology: 4Q
Max. forward impulse current: 12.5A
Features of semiconductor devices: sensitive gate
Produkt ist nicht verfügbar
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WNS40H100CBJ pVersion=0046&contRep=ZT&docId=005056AB90B41EDB9B89004606ABC0C7&compId=WNS40H100CB.pdf?ci_sign=961831982c9ddb562ec774f452b9d74d73f10f9e
WNS40H100CBJ
Hersteller: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 100V; 20Ax2; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 20A x2
Semiconductor structure: common cathode; double
Case: D2PAK
Max. forward voltage: 0.68V
Max. load current: 40A
Max. forward impulse current: 380A
Kind of package: reel; tape
auf Bestellung 98 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
34+2.16 EUR
52+1.38 EUR
Mindestbestellmenge: 34
Im Einkaufswagen  Stück im Wert von  UAH
NXPSC04650B pVersion=0046&contRep=ZT&docId=005056AB752F1ED8808355243183EA18&compId=NXPSC04650B.pdf?ci_sign=2fe46987e1cc9423a6afd4be2cd0aa28fc50fd4e pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36
NXPSC04650B
Hersteller: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SiC; SMD; 650V; 4A; reel,tape
Semiconductor structure: single diode
Kind of package: reel; tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Load current: 4A
Max. forward voltage: 1.5V
Max. load current: 8A
Max. forward impulse current: 24A
Max. off-state voltage: 650V
Case: D2PAK
auf Bestellung 9 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
9+7.95 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
WNSC2D04650DJ WNSC2D04650D.pdf
WNSC2D04650DJ
Hersteller: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SiC; SMD; 650V; 4A; reel,tape
Technology: SiC
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Max. forward voltage: 1.7V
Load current: 4A
Max. forward impulse current: 24A
Max. off-state voltage: 650V
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WNSC2D04650Q pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDB8D0705D960780D4&compId=WNSC2D04650Q.pdf?ci_sign=bcd58e96945379d399835a8c48f5d5874319942a
Hersteller: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220AC; Ufmax: 2.2V
Technology: SiC
Case: TO220AC
Mounting: THT
Kind of package: tube
Max. forward voltage: 2.2V
Load current: 4A
Max. load current: 8A
Max. forward impulse current: 24A
Max. off-state voltage: 650V
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WNSC2D04650TJ WNSC2D04650T.pdf
Hersteller: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN8x8N; SiC; SMD; 650V; 4A; reel,tape
Technology: SiC
Case: DFN8x8N
Mounting: SMD
Kind of package: reel; tape
Max. forward voltage: 1.7V
Load current: 4A
Max. forward impulse current: 24A
Max. off-state voltage: 650V
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WNSC2D04650XQ
WNSC2D04650XQ
Hersteller: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220FP-2; tube
Technology: SiC
Case: TO220FP-2
Mounting: THT
Kind of package: tube
Max. forward voltage: 1.7V
Load current: 4A
Max. forward impulse current: 20A
Max. off-state voltage: 650V
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WG40N65DFJQ
Hersteller: WeEn Semiconductors
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 15A; 26W; SOT1293,TO3PF
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 15A
Power dissipation: 26W
Case: SOT1293; TO3PF
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 173nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BT152B-1200TJ pVersion=0046&contRep=ZT&docId=005056AB281E1EDF93CBB109BA6FC0D6&compId=BT152B-1200T.pdf?ci_sign=756dcc01a8cfa37cf0faef7b98c85d9700042970
Hersteller: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 31A; 20A; Igt: 35mA; D2PAK; SMD; reel,tape
Type of thyristor: thyristor
Max. off-state voltage: 1.2kV
Max. load current: 31A
Load current: 20A
Gate current: 35mA
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 250A
Turn-on time: 2µs
Produkt ist nicht verfügbar
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WG50N65HFW1Q
Hersteller: WeEn Semiconductors
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 227W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 227W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 138nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
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WTMH80T16RT pVersion=0046&contRep=ZT&docId=005056AB281E1EDF93CD1D27D29A80D6&compId=WTMH80T16RT.pdf?ci_sign=8217bcbfa29216c06ea12d905ff101eb7d3ce6f1
Hersteller: WeEn Semiconductors
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 80A; Ifmax: 125A; TO240AA
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 80A
Max. load current: 125A
Case: TO240AA
Max. forward voltage: 1.29V
Threshold on-voltage: 0.95V
Max. forward impulse current: 1.4kA
Gate current: 100mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BT155Z-1200TQ pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BEF5A14375AD80C4&compId=BT155Z-1200T.pdf?ci_sign=da4f4f9ecf8e5cfccc64c6bda46fa187f39dd2c2 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36
BT155Z-1200TQ
Hersteller: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 79A; 50A; Igt: 50mA; SOT1292,TOP3I; THT
Max. off-state voltage: 1.2kV
Load current: 50A
Case: SOT1292; TOP3I
Mounting: THT
Max. load current: 79A
Max. forward impulse current: 0.65kA
Kind of package: tube
Type of thyristor: thyristor
Turn-on time: 2µs
Gate current: 50mA
auf Bestellung 485 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
21+3.47 EUR
26+2.83 EUR
27+2.7 EUR
90+2.29 EUR
Mindestbestellmenge: 21
Im Einkaufswagen  Stück im Wert von  UAH
WNSC2D021200D6J pVersion=0046&contRep=ZT&docId=005056AB281E1EDF93E584D944DF20D6&compId=WNSC2D021200D6J.pdf?ci_sign=d6261fd7b0f83655de65a5e039306fe7b124e371
Hersteller: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SiC; SMD; 1.2kV; 2A; reel,tape
Technology: SiC
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Max. forward voltage: 1.65V
Load current: 2A
Max. forward impulse current: 26A
Max. off-state voltage: 1.2kV
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Produkt ist nicht verfügbar
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WNSC2D051200D6J pVersion=0046&contRep=ZT&docId=005056AB281E1EDF93E5906FDDC0C0D6&compId=WNSC2D051200D6J.pdf?ci_sign=80c84dac35b55dc0462d2ea5379a10d827c08a22
Hersteller: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SiC; SMD; 1.2kV; 5A; reel,tape
Technology: SiC
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Max. forward voltage: 1.6V
Load current: 5A
Max. load current: 10A
Max. forward impulse current: 45A
Max. off-state voltage: 1.2kV
Semiconductor structure: single diode
Type of diode: Schottky rectifying
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WNSC2D101200D6J pVersion=0046&contRep=ZT&docId=005056AB281E1EDF93E5998DB1E0A0D6&compId=WNSC2D101200D6J.pdf?ci_sign=bf48ebe83c665505a71c4440ee63a1d8fad27840
Hersteller: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SiC; SMD; 1.2kV; 10A; reel,tape
Technology: SiC
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Max. forward voltage: 1.6V
Load current: 10A
Max. load current: 20A
Max. forward impulse current: 80A
Max. off-state voltage: 1.2kV
Semiconductor structure: single diode
Type of diode: Schottky rectifying
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WNSC2D201200CW6Q pVersion=0046&contRep=ZT&docId=005056AB281E1EDF93E67180955F60D6&compId=WNSC2D201200CW6Q.pdf?ci_sign=92383b216d2d5daed1994f8c6b0f95a12d5589c9
Hersteller: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10Ax2; TO247-3; tube
Technology: SiC
Case: TO247-3
Mounting: THT
Kind of package: tube
Max. forward voltage: 1.65V
Load current: 10A x2
Max. load current: 20A
Max. forward impulse current: 80A
Max. off-state voltage: 1.2kV
Semiconductor structure: common cathode; double
Type of diode: Schottky rectifying
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WSJM65R099DQ pVersion=0046&contRep=ZT&docId=005056AB281E1EDF93E35F3F2C7140D6&compId=WSJM65R099DQ.pdf?ci_sign=3a234b4c4562c2a8dca11ae94957239c205d3640
Hersteller: WeEn Semiconductors
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; Idm: 128A; 240W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Pulsed drain current: 128A
Power dissipation: 240W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 99mΩ
Mounting: THT
Gate charge: 57nC
Kind of package: tube
Kind of channel: enhancement
Version: ESD
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