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SM8S33CAJ WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB281E1EDE90C9DCF8552600D5&compId=SM8S_ser.pdf?ci_sign=de6efedc7b1a0f20d98cf269f0efb7ba8d77acec Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 6.6kW; 36.7÷40.6V; 124A; bidirectional; DO218J; SM8S
Type of diode: TVS
Peak pulse power dissipation: 6.6kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 124A
Semiconductor structure: bidirectional
Case: DO218J
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Manufacturer series: SM8S
Produkt ist nicht verfügbar
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NXPSC206506Q NXPSC206506Q WeEn Semiconductors nxpsc20650.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 1.7V
Max. forward impulse current: 100A
Kind of package: tube
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BUJ100LR,412 BUJ100LR,412 WeEn Semiconductors Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 400V; 1A; 2.1W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 400V
Collector current: 1A
Power dissipation: 2.1W
Case: TO92
Current gain: 5...20
Mounting: THT
Kind of package: bulk
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278+0.26 EUR
360+0.2 EUR
444+0.16 EUR
571+0.13 EUR
776+0.092 EUR
1000+0.083 EUR
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BYC30X-600P,127 BYC30X-600P,127 WeEn Semiconductors byc30x-600p.pdf _ween_psg2020.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 200A; Ufmax: 2.75V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 200A
Case: SOD113; TO220FP-2
Max. forward voltage: 2.75V
Reverse recovery time: 35ns
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BYC30W-600PQ BYC30W-600PQ WeEn Semiconductors byc30w-600p.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 300A; Ufmax: 1.8V; 22ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 0.3kA
Case: TO247AC Modified
Max. forward voltage: 1.8V
Reverse recovery time: 22ns
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68+1.06 EUR
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BYC30WT-600PQ BYC30WT-600PQ WeEn Semiconductors BYC30WT-600P.pdf _ween_psg2020.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 270A; TO247-3; 70ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 270A
Case: TO247-3
Max. forward voltage: 1.38V
Reverse recovery time: 70ns
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BYC30MX-650PQ WeEn Semiconductors BYC30MX-650PQ.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 650V; 30A; tube; Ifsm: 270A; Ufmax: 2.75V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 650V
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 270A
Case: SOD113; TO220FP-2
Max. forward voltage: 2.75V
Max. load current: 60A
Reverse recovery time: 20ns
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BYC30-1200PQ BYC30-1200PQ WeEn Semiconductors byc30-1200p.pdf _ween_psg2020.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 30A; tube; Ifsm: 270A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 270A
Case: SOD59; TO220AC
Max. forward voltage: 3.3V
Reverse recovery time: 65ns
Heatsink thickness: 1.14...1.4mm
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BYC30-600P,127 BYC30-600P,127 WeEn Semiconductors byc30-600p.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 200A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Kind of package: tube
Max. forward impulse current: 200A
Case: SOD59; TO220AC
Max. forward voltage: 1.38V
Reverse recovery time: 35ns
Produkt ist nicht verfügbar
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BYC30B-600PJ BYC30B-600PJ WeEn Semiconductors BYC30B-600P.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 30A; 35ns; D2PAK,SOT404; Ufmax: 2.75V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 0.3kA
Case: D2PAK; SOT404
Max. forward voltage: 2.75V
Reverse recovery time: 35ns
Produkt ist nicht verfügbar
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BYC30DW-600PQ BYC30DW-600PQ WeEn Semiconductors byc30dw-600p.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 260A; TO247-2; 26ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Kind of package: tube
Max. forward impulse current: 260A
Case: TO247-2
Max. forward voltage: 1.5V
Reverse recovery time: 26ns
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BYC30MB-650PJ WeEn Semiconductors BYC30MB-650P.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 650V; 30A; 20ns; D2PAK,SOT404; Ufmax: 2.75V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 650V
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: reel; tape
Max. forward impulse current: 270A
Case: D2PAK; SOT404
Max. forward voltage: 2.75V
Max. load current: 60A
Reverse recovery time: 20ns
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BYC30W-1200PQ BYC30W-1200PQ WeEn Semiconductors BYC30W-1200P.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 30A; tube; Ifsm: 300A; TO247-2; 65ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 0.3kA
Case: TO247-2
Max. forward voltage: 3.5V
Reverse recovery time: 65ns
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BYC30W-600PT2Q WeEn Semiconductors BYC30W-600PT2Q.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 270A; TO247-2; 26ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 270A
Case: TO247-2
Max. forward voltage: 2.75V
Max. load current: 60A
Reverse recovery time: 26ns
Produkt ist nicht verfügbar
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BYC30Y-600PQ BYC30Y-600PQ WeEn Semiconductors BYC30Y-600P.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 200A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Kind of package: tube
Max. forward impulse current: 200A
Case: SOD59; TO220AC
Max. forward voltage: 1.38V
Reverse recovery time: 35ns
Produkt ist nicht verfügbar
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BYC30Y-600PSQ WeEn Semiconductors BYC30Y-600PS.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 260A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 260A
Case: SOD59; TO220AC
Max. forward voltage: 2.75V
Max. load current: 60A
Reverse recovery time: 45ns
Produkt ist nicht verfügbar
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BYC15-600,127 BYC15-600,127 WeEn Semiconductors byc15-600.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 15A; tube; Ifsm: 200A; SOD59,TO220AC
Case: SOD59; TO220AC
Mounting: THT
Type of diode: rectifying
Kind of package: tube
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Reverse recovery time: 19ns
Max. forward voltage: 1.4V
Load current: 15A
Max. forward impulse current: 200A
Max. off-state voltage: 0.6kV
auf Bestellung 338 Stücke:
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90+0.8 EUR
106+0.67 EUR
120+0.6 EUR
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BYC15-600PQ BYC15-600PQ WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB281E1EDCA7F20ADBB4D7A0CE&compId=BYC15-600P.pdf?ci_sign=8df26ea6b3ca0c95d623f62b1f774f85e0c859cd Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 15A; tube; Ifsm: 180A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 15A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 180A
Case: SOD59; TO220AC
Max. forward voltage: 2V
Max. load current: 30A
Reverse recovery time: 18ns
auf Bestellung 781 Stücke:
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71+1.02 EUR
91+0.79 EUR
108+0.66 EUR
116+0.62 EUR
500+0.56 EUR
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BYC15-1200PQ BYC15-1200PQ WeEn Semiconductors byc15-1200p.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 15A; tube; Ifsm: 180A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 15A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Kind of package: tube
Max. forward impulse current: 180A
Case: SOD59; TO220AC
Max. forward voltage: 2V
Reverse recovery time: 61ns
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BUJ302AD,118 BUJ302AD,118 WeEn Semiconductors buj302ad.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 400V; 4A; 80W; DPAK
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 400V
Collector current: 4A
Power dissipation: 80W
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Current gain: 25...50
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91+0.79 EUR
103+0.7 EUR
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BUJ302A,127 BUJ302A,127 WeEn Semiconductors PHGLS22628-1.pdf?t.download=true&u=5oefqw Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 400V; 4A; 80W; TO220AB
Mounting: THT
Case: TO220AB
Type of transistor: NPN
Kind of package: tube
Collector current: 4A
Current gain: 25...50
Power dissipation: 80W
Collector-emitter voltage: 400V
Polarisation: bipolar
auf Bestellung 176 Stücke:
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117+0.61 EUR
145+0.5 EUR
161+0.45 EUR
176+0.4 EUR
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SMCJ58AJ WeEn Semiconductors pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDB8E6732630A480D4&compId=SMCJ%20Series.pdf?ci_sign=f3cf1e6589e612d15b96054b0475d78a31b97111 Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 65÷70.6V; 16.1A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 58V
Breakdown voltage: 65...70.6V
Max. forward impulse current: 16.1A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Kind of package: reel; tape
Produkt ist nicht verfügbar
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BTA225-600BT,127 BTA225-600BT,127 WeEn Semiconductors bta225-600bt.pdf Category: Triacs
Description: Triac; 600V; 25A; TO220AB; Igt: 50mA; Ifsm: 190A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 25A
Case: TO220AB
Gate current: 50mA
Max. forward impulse current: 190A
Features of semiconductor devices: high temperature; sensitive gate
Mounting: THT
Kind of package: tube
Technology: 3Q; Hi-Com
Produkt ist nicht verfügbar
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BTA216B-600D,118 BTA216B-600D,118 WeEn Semiconductors bta216b-600e.pdf Category: Triacs
Description: Triac; 600V; 16A; D2PAK; Igt: 5mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: D2PAK
Gate current: 5mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
auf Bestellung 616 Stücke:
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76+0.94 EUR
85+0.84 EUR
100+0.77 EUR
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BTA216B-800B,118 BTA216B-800B,118 WeEn Semiconductors bta216b-800b.pdf Category: Triacs
Description: Triac; 800V; 16A; D2PAK; Igt: 50mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: D2PAK
Gate current: 50mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
auf Bestellung 594 Stücke:
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42+1.72 EUR
56+1.3 EUR
100+0.81 EUR
500+0.66 EUR
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BTA216B-600E,118 BTA216B-600E,118 WeEn Semiconductors bta216b-600e.pdf Category: Triacs
Description: Triac; 600V; 16A; D2PAK; Igt: 10mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: D2PAK
Gate current: 10mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
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BTA216X-800B/L02Q WeEn Semiconductors BTA216X_500B%26600B%26800B.pdf Category: Triacs
Description: Triac; 800V; 16A; TO220FP; Igt: 50mA; Ifsm: 150A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: TO220FP
Gate current: 50mA
Max. forward impulse current: 150A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
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BTA216-600D,127 BTA216-600D,127 WeEn Semiconductors bta216-600d.pdf Category: Triacs
Description: Triac; 600V; 16A; TO220AB; Igt: 5mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: TO220AB
Gate current: 5mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
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BTA216-600F,127 BTA216-600F,127 WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB752F1ED782E3601BDDFD6259&compId=BTA216-600F.pdf?ci_sign=9783fb5cacc54a09a562769daf7900098e0b97c2 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36 Category: Triacs
Description: Triac; 600V; 16A; TO220AB; Igt: 25mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: TO220AB
Gate current: 25mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
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BTA216B-600F,118 BTA216B-600F,118 WeEn Semiconductors bta216b-600e.pdf Category: Triacs
Description: Triac; 600V; 16A; D2PAK; Igt: 25mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: D2PAK
Gate current: 25mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
Produkt ist nicht verfügbar
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BTA216X-600D,127 BTA216X-600D,127 WeEn Semiconductors PHGLS23478-1.pdf?t.download=true&u=5oefqw bta216x-600e.pdf Category: Triacs
Description: Triac; 600V; 16A; TO220FP; Igt: 5mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: TO220FP
Gate current: 5mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
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BTA216X-600F,127 BTA216X-600F,127 WeEn Semiconductors bta216x-600e.pdf Category: Triacs
Description: Triac; 600V; 16A; TO220FP; Igt: 25mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: TO220FP
Gate current: 25mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
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BYV29X-600,127 BYV29X-600,127 WeEn Semiconductors byv29x-600.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 9A; tube; Ifsm: 100A; SOD113,TO220FP-2
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 9A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 100A
Case: SOD113; TO220FP-2
Max. forward voltage: 1.11V
Reverse recovery time: 60ns
auf Bestellung 560 Stücke:
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88+0.82 EUR
182+0.39 EUR
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SMDJ30AJ WeEn Semiconductors pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDB8E74FCDD7F0E0D4&compId=SMDJ%20Series.pdf?ci_sign=a6572f21ae2ae1b136361c5522d6aa7958ae3b4e Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 33.6÷36.59V; 62A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 30V
Breakdown voltage: 33.6...36.59V
Max. forward impulse current: 62A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: SMDJ
Leakage current: 1µA
Produkt ist nicht verfügbar
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BUJ302AX,127 BUJ302AX,127 WeEn Semiconductors buj302ax.pdf Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 400V; 4A; 26W; TO220FP
Mounting: THT
Case: TO220FP
Type of transistor: NPN
Kind of package: tube
Collector current: 4A
Current gain: 25...50
Power dissipation: 26W
Collector-emitter voltage: 400V
Polarisation: bipolar
Produkt ist nicht verfügbar
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BYV29-600,127 BYV29-600,127 WeEn Semiconductors BYV29-600%2C127.pdf BYV29600.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 9A; tube; Ifsm: 77A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 9A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 77A
Case: SOD59; TO220AC
Max. forward voltage: 1.45V
Reverse recovery time: 60ns
auf Bestellung 1 Stücke:
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BYV29B-500,118 BYV29B-500,118 WeEn Semiconductors byv29b-500.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 500V; 9A; 60ns; D2PAK,SOT404; Ufmax: 1.45V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 500V
Load current: 9A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 77A
Case: D2PAK; SOT404
Max. forward voltage: 1.45V
Reverse recovery time: 60ns
Features of semiconductor devices: ultrafast switching
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BYV29B-600PJ BYV29B-600PJ WeEn Semiconductors BYV29B-600P.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 9A; 75ns; D2PAK,SOT404; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 9A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 120A
Case: D2PAK; SOT404
Max. forward voltage: 1.3V
Reverse recovery time: 75ns
Max. load current: 18A
Features of semiconductor devices: ultrafast switching
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BYV29F-600,127 BYV29F-600,127 WeEn Semiconductors PHGLS22517-1.pdf?t.download=true&u=5oefqw byv29f-600.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 9A; tube; Ifsm: 100A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 9A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 100A
Case: SOD59; TO220AC
Max. forward voltage: 1.7V
Reverse recovery time: 35ns
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BYV29FX-600,127 BYV29FX-600,127 WeEn Semiconductors BYV29FX-600.pdf _ween_psg2020.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 9A; tube; Ifsm: 100A; SOD113,TO220FP-2
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 9A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 100A
Case: SOD113; TO220FP-2
Max. forward voltage: 1.25V
Reverse recovery time: 35ns
Features of semiconductor devices: ultrafast switching
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BYV29B-600,118 BYV29B-600,118 WeEn Semiconductors byv29b-600.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 9A; 60ns; D2PAK,SOT404; Ufmax: 1.45V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 9A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 77A
Case: D2PAK; SOT404
Max. forward voltage: 1.45V
Reverse recovery time: 60ns
Features of semiconductor devices: ultrafast switching
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BYV29D-600PJ BYV29D-600PJ WeEn Semiconductors byv29d-600p.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 9A; DPAK; Ufmax: 0.9V; Ifsm: 120A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 9A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 120A
Case: DPAK
Max. forward voltage: 0.9V
Features of semiconductor devices: ultrafast switching
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BYV29FB-600,118 BYV29FB-600,118 WeEn Semiconductors BYV29FB-600.pdf _ween_psg2020.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 9A; 35ns; D2PAK,SOT404; Ufmax: 1.25V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 9A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 100A
Case: D2PAK; SOT404
Max. forward voltage: 1.25V
Reverse recovery time: 35ns
Features of semiconductor devices: ultrafast switching
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BYV29FD-600,118 BYV29FD-600,118 WeEn Semiconductors byv29fd-600.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 9A; 35ns; DPAK; Ufmax: 1.25V; Ifsm: 91A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 9A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 91A
Case: DPAK
Max. forward voltage: 1.25V
Reverse recovery time: 35ns
Features of semiconductor devices: ultrafast switching
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BYV29G-600,127 BYV29G-600,127 WeEn Semiconductors byv29g-600.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 9A; tube; Ifsm: 77A; I2PAK; Ufmax: 1.45V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 9A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 77A
Case: I2PAK
Max. forward voltage: 1.45V
Reverse recovery time: 60ns
Produkt ist nicht verfügbar
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P6SMBJ28CAJ WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB281E1EDF93CADF9A40DCA0D6&compId=P6SMBJ.pdf?ci_sign=549054d3bd78afb23b6bad8a4db93bf1e0463454 Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 31.33÷34.16V; 13.3A; bidirectional; SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 28V
Breakdown voltage: 31.33...34.16V
Max. forward impulse current: 13.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
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BTA208X-1000C0,127 WeEn Semiconductors bta208x-1000c0.pdf Category: Triacs
Description: Triac; 1kV; 8A; TO220FP; Igt: 35mA; Ifsm: 71A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 1kV
Max. load current: 8A
Case: TO220FP
Gate current: 35mA
Max. forward impulse current: 71A
Technology: 3Q; Hi-Com
Features of semiconductor devices: high commutation
Mounting: THT
Kind of package: tube
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BTA208X-1000C0/L01 WeEn Semiconductors bta208x-1000c0.pdf Category: Triacs
Description: Triac; 1kV; 8A; TO220FP; Igt: 35mA; Ifsm: 71A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 1kV
Max. load current: 8A
Case: TO220FP
Gate current: 35mA
Max. forward impulse current: 71A
Technology: 3Q; Hi-Com
Features of semiconductor devices: high commutation
Mounting: THT
Kind of package: tube
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BYV34-400,127 BYV34-400,127 WeEn Semiconductors byv34-400.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 10Ax2; tube; Ifsm: 120A; SOT78,TO220AB
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 10A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 120A
Case: SOT78; TO220AB
Max. forward voltage: 0.87V
Max. load current: 20A
Heatsink thickness: 1.25...1.4mm
auf Bestellung 1405 Stücke:
Lieferzeit 14-21 Tag (e)
36+2 EUR
51+1.41 EUR
86+0.84 EUR
91+0.79 EUR
Mindestbestellmenge: 36
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BYV32E-100,127 BYV32E-100,127 WeEn Semiconductors byv32e-100.pdf BYV32E-100.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 10Ax2; tube; Ifsm: 137A; SOT78,TO220AB
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 10A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 137A
Case: SOT78; TO220AB
Max. forward voltage: 0.85V
Max. load current: 20A
Reverse recovery time: 25ns
Heatsink thickness: 1.25...1.4mm
auf Bestellung 501 Stücke:
Lieferzeit 14-21 Tag (e)
85+0.84 EUR
100+0.72 EUR
114+0.63 EUR
125+0.57 EUR
250+0.55 EUR
Mindestbestellmenge: 85
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BYV32E-150,127 BYV32E-150,127 WeEn Semiconductors byv32e-150.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 150V; 10Ax2; tube; Ifsm: 137A; SOT78,TO220AB
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 150V
Load current: 10A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 137A
Case: SOT78; TO220AB
Max. forward voltage: 0.85V
Max. load current: 20A
Heatsink thickness: 1.25...1.4mm
Reverse recovery time: 25ns
auf Bestellung 203 Stücke:
Lieferzeit 14-21 Tag (e)
85+0.84 EUR
100+0.72 EUR
114+0.63 EUR
125+0.57 EUR
Mindestbestellmenge: 85
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BYV42E-150,127 BYV42E-150,127 WeEn Semiconductors byv42e-200.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 150V; 15Ax2; tube; Ifsm: 150A; SOT78,TO220AB
Case: SOT78; TO220AB
Type of diode: rectifying
Kind of package: tube
Mounting: THT
Features of semiconductor devices: ultrafast switching
Reverse recovery time: 28ns
Heatsink thickness: max. 1.3mm
Max. load current: 30A
Max. forward voltage: 0.78V
Load current: 15A x2
Max. forward impulse current: 150A
Max. off-state voltage: 150V
Semiconductor structure: common cathode; double
auf Bestellung 345 Stücke:
Lieferzeit 14-21 Tag (e)
48+1.5 EUR
61+1.18 EUR
68+1.06 EUR
73+0.98 EUR
100+0.9 EUR
250+0.82 EUR
Mindestbestellmenge: 48
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BYV32EB-200,118 BYV32EB-200,118 WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB752F1ED78292AEACF3A20259&compId=BYV32EB-200.pdf?ci_sign=9e0a942a6acdf47060359758fe6cbdfc3375fc40 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36 Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 10Ax2; 25ns; D2PAK,SOT404; Ifsm: 137A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 10A x2
Reverse recovery time: 25ns
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Case: D2PAK; SOT404
Max. forward voltage: 0.72V
Max. load current: 20A
Max. forward impulse current: 137A
Kind of package: reel; tape
auf Bestellung 624 Stücke:
Lieferzeit 14-21 Tag (e)
34+2.13 EUR
58+1.25 EUR
66+1.09 EUR
73+0.98 EUR
75+0.96 EUR
100+0.88 EUR
250+0.76 EUR
500+0.67 EUR
Mindestbestellmenge: 34
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BTA208S-800B,118 BTA208S-800B,118 WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB752F1ED782E2BA851CCE0259&compId=BTA208S-800B.pdf?ci_sign=ea3fc467ec030d7c6be7753fed7172ca79994f49 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36 Category: Triacs
Description: Triac; 800V; 8A; D2PAK; Igt: 50mA; Ifsm: 65A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 8A
Case: D2PAK
Gate current: 50mA
Max. forward impulse current: 65A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
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BTA208X-800B/L02Q WeEn Semiconductors bta208x-800b.pdf Category: Triacs
Description: Triac; 800V; 8A; TO220FP; Igt: 50mA; Ifsm: 71A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 8A
Case: TO220FP
Gate current: 50mA
Max. forward impulse current: 71A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
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BTA445Z-800BTQ WeEn Semiconductors bta445z-800ct.pdf Category: Triacs
Description: Triac; 800V; 45A; SOT1292,TO3P; Igt: 50mA; Ifsm: 495A; 3Q,Hi-Com
Case: SOT1292; TO3P
Mounting: THT
Kind of package: tube
Type of thyristor: triac
Features of semiconductor devices: high temperature
Technology: 3Q; Hi-Com
Gate current: 50mA
Max. load current: 45A
Max. forward impulse current: 495A
Max. off-state voltage: 0.8kV
Produkt ist nicht verfügbar
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WNSC5D20650X6Q WNSC5D20650X6Q WeEn Semiconductors WNSC5D20650X6Q.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO220FP-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A
Semiconductor structure: single diode
Case: TO220FP-2
Max. forward voltage: 2.2V
Max. load current: 40A
Max. forward impulse current: 80A
Kind of package: tube
auf Bestellung 922 Stücke:
Lieferzeit 14-21 Tag (e)
27+2.69 EUR
30+2.4 EUR
34+2.13 EUR
100+1.92 EUR
Mindestbestellmenge: 27
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BTA308Y-800C0TQ BTA308Y-800C0TQ WeEn Semiconductors bta308y-800c0t.pdf Category: Triacs
Description: Triac; 800V; 8A; TO220AB; Igt: 35mA; Ifsm: 60A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 8A
Case: TO220AB
Gate current: 35mA
Max. forward impulse current: 60A
Technology: 3Q; Hi-Com
Features of semiconductor devices: high temperature; sensitive gate
Mounting: THT
Kind of package: tube
auf Bestellung 1551 Stücke:
Lieferzeit 14-21 Tag (e)
70+1.03 EUR
126+0.57 EUR
147+0.49 EUR
166+0.43 EUR
175+0.41 EUR
Mindestbestellmenge: 70
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BTA308X-800B0Q BTA308X-800B0Q WeEn Semiconductors bta308x-800b0.pdf Category: Triacs
Description: Triac; 800V; 8A; TO220FP; Igt: 50mA; Ifsm: 60A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 8A
Case: TO220FP
Gate current: 50mA
Max. forward impulse current: 60A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
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BTA308S-800ETJ WeEn Semiconductors bta308s-800et.pdf Category: Triacs
Description: Triac; 800V; 8A; DPAK; Igt: 10mA; Ifsm: 60A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 8A
Case: DPAK
Gate current: 10mA
Max. forward impulse current: 60A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
Produkt ist nicht verfügbar
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SM8S33CAJ pVersion=0046&contRep=ZT&docId=005056AB281E1EDE90C9DCF8552600D5&compId=SM8S_ser.pdf?ci_sign=de6efedc7b1a0f20d98cf269f0efb7ba8d77acec
Hersteller: WeEn Semiconductors
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 6.6kW; 36.7÷40.6V; 124A; bidirectional; DO218J; SM8S
Type of diode: TVS
Peak pulse power dissipation: 6.6kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 124A
Semiconductor structure: bidirectional
Case: DO218J
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Manufacturer series: SM8S
Produkt ist nicht verfügbar
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NXPSC206506Q nxpsc20650.pdf
NXPSC206506Q
Hersteller: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 1.7V
Max. forward impulse current: 100A
Kind of package: tube
Produkt ist nicht verfügbar
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BUJ100LR,412
BUJ100LR,412
Hersteller: WeEn Semiconductors
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 400V; 1A; 2.1W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 400V
Collector current: 1A
Power dissipation: 2.1W
Case: TO92
Current gain: 5...20
Mounting: THT
Kind of package: bulk
auf Bestellung 4242 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
278+0.26 EUR
360+0.2 EUR
444+0.16 EUR
571+0.13 EUR
776+0.092 EUR
1000+0.083 EUR
Mindestbestellmenge: 278
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BYC30X-600P,127 byc30x-600p.pdf _ween_psg2020.pdf
BYC30X-600P,127
Hersteller: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 200A; Ufmax: 2.75V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 200A
Case: SOD113; TO220FP-2
Max. forward voltage: 2.75V
Reverse recovery time: 35ns
Produkt ist nicht verfügbar
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BYC30W-600PQ byc30w-600p.pdf
BYC30W-600PQ
Hersteller: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 300A; Ufmax: 1.8V; 22ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 0.3kA
Case: TO247AC Modified
Max. forward voltage: 1.8V
Reverse recovery time: 22ns
auf Bestellung 480 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
39+1.84 EUR
68+1.06 EUR
Mindestbestellmenge: 39
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BYC30WT-600PQ BYC30WT-600P.pdf _ween_psg2020.pdf
BYC30WT-600PQ
Hersteller: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 270A; TO247-3; 70ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 270A
Case: TO247-3
Max. forward voltage: 1.38V
Reverse recovery time: 70ns
Produkt ist nicht verfügbar
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BYC30MX-650PQ BYC30MX-650PQ.pdf
Hersteller: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 650V; 30A; tube; Ifsm: 270A; Ufmax: 2.75V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 650V
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 270A
Case: SOD113; TO220FP-2
Max. forward voltage: 2.75V
Max. load current: 60A
Reverse recovery time: 20ns
Produkt ist nicht verfügbar
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BYC30-1200PQ byc30-1200p.pdf _ween_psg2020.pdf
BYC30-1200PQ
Hersteller: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 30A; tube; Ifsm: 270A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 270A
Case: SOD59; TO220AC
Max. forward voltage: 3.3V
Reverse recovery time: 65ns
Heatsink thickness: 1.14...1.4mm
Produkt ist nicht verfügbar
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BYC30-600P,127 byc30-600p.pdf
BYC30-600P,127
Hersteller: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 200A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Kind of package: tube
Max. forward impulse current: 200A
Case: SOD59; TO220AC
Max. forward voltage: 1.38V
Reverse recovery time: 35ns
Produkt ist nicht verfügbar
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BYC30B-600PJ BYC30B-600P.pdf
BYC30B-600PJ
Hersteller: WeEn Semiconductors
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 30A; 35ns; D2PAK,SOT404; Ufmax: 2.75V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 0.3kA
Case: D2PAK; SOT404
Max. forward voltage: 2.75V
Reverse recovery time: 35ns
Produkt ist nicht verfügbar
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BYC30DW-600PQ byc30dw-600p.pdf
BYC30DW-600PQ
Hersteller: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 260A; TO247-2; 26ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Kind of package: tube
Max. forward impulse current: 260A
Case: TO247-2
Max. forward voltage: 1.5V
Reverse recovery time: 26ns
Produkt ist nicht verfügbar
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BYC30MB-650PJ BYC30MB-650P.pdf
Hersteller: WeEn Semiconductors
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 650V; 30A; 20ns; D2PAK,SOT404; Ufmax: 2.75V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 650V
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: reel; tape
Max. forward impulse current: 270A
Case: D2PAK; SOT404
Max. forward voltage: 2.75V
Max. load current: 60A
Reverse recovery time: 20ns
Produkt ist nicht verfügbar
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BYC30W-1200PQ BYC30W-1200P.pdf
BYC30W-1200PQ
Hersteller: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 30A; tube; Ifsm: 300A; TO247-2; 65ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 0.3kA
Case: TO247-2
Max. forward voltage: 3.5V
Reverse recovery time: 65ns
Produkt ist nicht verfügbar
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BYC30W-600PT2Q BYC30W-600PT2Q.pdf
Hersteller: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 270A; TO247-2; 26ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 270A
Case: TO247-2
Max. forward voltage: 2.75V
Max. load current: 60A
Reverse recovery time: 26ns
Produkt ist nicht verfügbar
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BYC30Y-600PQ BYC30Y-600P.pdf
BYC30Y-600PQ
Hersteller: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 200A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Kind of package: tube
Max. forward impulse current: 200A
Case: SOD59; TO220AC
Max. forward voltage: 1.38V
Reverse recovery time: 35ns
Produkt ist nicht verfügbar
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BYC30Y-600PSQ BYC30Y-600PS.pdf
Hersteller: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 260A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 260A
Case: SOD59; TO220AC
Max. forward voltage: 2.75V
Max. load current: 60A
Reverse recovery time: 45ns
Produkt ist nicht verfügbar
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BYC15-600,127 byc15-600.pdf
BYC15-600,127
Hersteller: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 15A; tube; Ifsm: 200A; SOD59,TO220AC
Case: SOD59; TO220AC
Mounting: THT
Type of diode: rectifying
Kind of package: tube
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Reverse recovery time: 19ns
Max. forward voltage: 1.4V
Load current: 15A
Max. forward impulse current: 200A
Max. off-state voltage: 0.6kV
auf Bestellung 338 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
90+0.8 EUR
106+0.67 EUR
120+0.6 EUR
Mindestbestellmenge: 90
Im Einkaufswagen  Stück im Wert von  UAH
BYC15-600PQ pVersion=0046&contRep=ZT&docId=005056AB281E1EDCA7F20ADBB4D7A0CE&compId=BYC15-600P.pdf?ci_sign=8df26ea6b3ca0c95d623f62b1f774f85e0c859cd
BYC15-600PQ
Hersteller: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 15A; tube; Ifsm: 180A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 15A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 180A
Case: SOD59; TO220AC
Max. forward voltage: 2V
Max. load current: 30A
Reverse recovery time: 18ns
auf Bestellung 781 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
71+1.02 EUR
91+0.79 EUR
108+0.66 EUR
116+0.62 EUR
500+0.56 EUR
Mindestbestellmenge: 71
Im Einkaufswagen  Stück im Wert von  UAH
BYC15-1200PQ byc15-1200p.pdf
BYC15-1200PQ
Hersteller: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 15A; tube; Ifsm: 180A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 15A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Kind of package: tube
Max. forward impulse current: 180A
Case: SOD59; TO220AC
Max. forward voltage: 2V
Reverse recovery time: 61ns
Produkt ist nicht verfügbar
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BUJ302AD,118 buj302ad.pdf
BUJ302AD,118
Hersteller: WeEn Semiconductors
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 400V; 4A; 80W; DPAK
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 400V
Collector current: 4A
Power dissipation: 80W
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Current gain: 25...50
auf Bestellung 394 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
72+1 EUR
91+0.79 EUR
103+0.7 EUR
129+0.56 EUR
Mindestbestellmenge: 72
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BUJ302A,127 PHGLS22628-1.pdf?t.download=true&u=5oefqw
BUJ302A,127
Hersteller: WeEn Semiconductors
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 400V; 4A; 80W; TO220AB
Mounting: THT
Case: TO220AB
Type of transistor: NPN
Kind of package: tube
Collector current: 4A
Current gain: 25...50
Power dissipation: 80W
Collector-emitter voltage: 400V
Polarisation: bipolar
auf Bestellung 176 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
85+0.84 EUR
117+0.61 EUR
145+0.5 EUR
161+0.45 EUR
176+0.4 EUR
Mindestbestellmenge: 85
Im Einkaufswagen  Stück im Wert von  UAH
SMCJ58AJ pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDB8E6732630A480D4&compId=SMCJ%20Series.pdf?ci_sign=f3cf1e6589e612d15b96054b0475d78a31b97111
Hersteller: WeEn Semiconductors
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 65÷70.6V; 16.1A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 58V
Breakdown voltage: 65...70.6V
Max. forward impulse current: 16.1A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Kind of package: reel; tape
Produkt ist nicht verfügbar
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BTA225-600BT,127 bta225-600bt.pdf
BTA225-600BT,127
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 25A; TO220AB; Igt: 50mA; Ifsm: 190A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 25A
Case: TO220AB
Gate current: 50mA
Max. forward impulse current: 190A
Features of semiconductor devices: high temperature; sensitive gate
Mounting: THT
Kind of package: tube
Technology: 3Q; Hi-Com
Produkt ist nicht verfügbar
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BTA216B-600D,118 bta216b-600e.pdf
BTA216B-600D,118
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 16A; D2PAK; Igt: 5mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: D2PAK
Gate current: 5mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
auf Bestellung 616 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
68+1.06 EUR
76+0.94 EUR
85+0.84 EUR
100+0.77 EUR
Mindestbestellmenge: 68
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BTA216B-800B,118 bta216b-800b.pdf
BTA216B-800B,118
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 16A; D2PAK; Igt: 50mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: D2PAK
Gate current: 50mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
auf Bestellung 594 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
42+1.72 EUR
56+1.3 EUR
100+0.81 EUR
500+0.66 EUR
Mindestbestellmenge: 42
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BTA216B-600E,118 bta216b-600e.pdf
BTA216B-600E,118
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 16A; D2PAK; Igt: 10mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: D2PAK
Gate current: 10mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
Produkt ist nicht verfügbar
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BTA216X-800B/L02Q BTA216X_500B%26600B%26800B.pdf
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 16A; TO220FP; Igt: 50mA; Ifsm: 150A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: TO220FP
Gate current: 50mA
Max. forward impulse current: 150A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
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BTA216-600D,127 bta216-600d.pdf
BTA216-600D,127
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 16A; TO220AB; Igt: 5mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: TO220AB
Gate current: 5mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTA216-600F,127 pVersion=0046&contRep=ZT&docId=005056AB752F1ED782E3601BDDFD6259&compId=BTA216-600F.pdf?ci_sign=9783fb5cacc54a09a562769daf7900098e0b97c2 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36
BTA216-600F,127
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 16A; TO220AB; Igt: 25mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: TO220AB
Gate current: 25mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
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BTA216B-600F,118 bta216b-600e.pdf
BTA216B-600F,118
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 16A; D2PAK; Igt: 25mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: D2PAK
Gate current: 25mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
Produkt ist nicht verfügbar
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BTA216X-600D,127 PHGLS23478-1.pdf?t.download=true&u=5oefqw bta216x-600e.pdf
BTA216X-600D,127
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 16A; TO220FP; Igt: 5mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: TO220FP
Gate current: 5mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
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BTA216X-600F,127 bta216x-600e.pdf
BTA216X-600F,127
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 16A; TO220FP; Igt: 25mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: TO220FP
Gate current: 25mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
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BYV29X-600,127 byv29x-600.pdf
BYV29X-600,127
Hersteller: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 9A; tube; Ifsm: 100A; SOD113,TO220FP-2
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 9A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 100A
Case: SOD113; TO220FP-2
Max. forward voltage: 1.11V
Reverse recovery time: 60ns
auf Bestellung 560 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
88+0.82 EUR
182+0.39 EUR
Mindestbestellmenge: 88
Im Einkaufswagen  Stück im Wert von  UAH
SMDJ30AJ pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDB8E74FCDD7F0E0D4&compId=SMDJ%20Series.pdf?ci_sign=a6572f21ae2ae1b136361c5522d6aa7958ae3b4e
Hersteller: WeEn Semiconductors
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 33.6÷36.59V; 62A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 30V
Breakdown voltage: 33.6...36.59V
Max. forward impulse current: 62A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: SMDJ
Leakage current: 1µA
Produkt ist nicht verfügbar
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BUJ302AX,127 buj302ax.pdf
BUJ302AX,127
Hersteller: WeEn Semiconductors
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 400V; 4A; 26W; TO220FP
Mounting: THT
Case: TO220FP
Type of transistor: NPN
Kind of package: tube
Collector current: 4A
Current gain: 25...50
Power dissipation: 26W
Collector-emitter voltage: 400V
Polarisation: bipolar
Produkt ist nicht verfügbar
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BYV29-600,127 BYV29-600%2C127.pdf BYV29600.pdf
BYV29-600,127
Hersteller: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 9A; tube; Ifsm: 77A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 9A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 77A
Case: SOD59; TO220AC
Max. forward voltage: 1.45V
Reverse recovery time: 60ns
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+71.5 EUR
Im Einkaufswagen  Stück im Wert von  UAH
BYV29B-500,118 byv29b-500.pdf
BYV29B-500,118
Hersteller: WeEn Semiconductors
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 500V; 9A; 60ns; D2PAK,SOT404; Ufmax: 1.45V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 500V
Load current: 9A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 77A
Case: D2PAK; SOT404
Max. forward voltage: 1.45V
Reverse recovery time: 60ns
Features of semiconductor devices: ultrafast switching
Produkt ist nicht verfügbar
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BYV29B-600PJ BYV29B-600P.pdf
BYV29B-600PJ
Hersteller: WeEn Semiconductors
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 9A; 75ns; D2PAK,SOT404; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 9A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 120A
Case: D2PAK; SOT404
Max. forward voltage: 1.3V
Reverse recovery time: 75ns
Max. load current: 18A
Features of semiconductor devices: ultrafast switching
Produkt ist nicht verfügbar
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BYV29F-600,127 PHGLS22517-1.pdf?t.download=true&u=5oefqw byv29f-600.pdf
BYV29F-600,127
Hersteller: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 9A; tube; Ifsm: 100A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 9A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 100A
Case: SOD59; TO220AC
Max. forward voltage: 1.7V
Reverse recovery time: 35ns
Produkt ist nicht verfügbar
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BYV29FX-600,127 BYV29FX-600.pdf _ween_psg2020.pdf
BYV29FX-600,127
Hersteller: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 9A; tube; Ifsm: 100A; SOD113,TO220FP-2
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 9A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 100A
Case: SOD113; TO220FP-2
Max. forward voltage: 1.25V
Reverse recovery time: 35ns
Features of semiconductor devices: ultrafast switching
Produkt ist nicht verfügbar
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BYV29B-600,118 byv29b-600.pdf
BYV29B-600,118
Hersteller: WeEn Semiconductors
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 9A; 60ns; D2PAK,SOT404; Ufmax: 1.45V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 9A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 77A
Case: D2PAK; SOT404
Max. forward voltage: 1.45V
Reverse recovery time: 60ns
Features of semiconductor devices: ultrafast switching
Produkt ist nicht verfügbar
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BYV29D-600PJ byv29d-600p.pdf
BYV29D-600PJ
Hersteller: WeEn Semiconductors
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 9A; DPAK; Ufmax: 0.9V; Ifsm: 120A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 9A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 120A
Case: DPAK
Max. forward voltage: 0.9V
Features of semiconductor devices: ultrafast switching
Produkt ist nicht verfügbar
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BYV29FB-600,118 BYV29FB-600.pdf _ween_psg2020.pdf
BYV29FB-600,118
Hersteller: WeEn Semiconductors
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 9A; 35ns; D2PAK,SOT404; Ufmax: 1.25V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 9A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 100A
Case: D2PAK; SOT404
Max. forward voltage: 1.25V
Reverse recovery time: 35ns
Features of semiconductor devices: ultrafast switching
Produkt ist nicht verfügbar
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BYV29FD-600,118 byv29fd-600.pdf
BYV29FD-600,118
Hersteller: WeEn Semiconductors
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 9A; 35ns; DPAK; Ufmax: 1.25V; Ifsm: 91A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 9A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 91A
Case: DPAK
Max. forward voltage: 1.25V
Reverse recovery time: 35ns
Features of semiconductor devices: ultrafast switching
Produkt ist nicht verfügbar
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BYV29G-600,127 byv29g-600.pdf
BYV29G-600,127
Hersteller: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 9A; tube; Ifsm: 77A; I2PAK; Ufmax: 1.45V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 9A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 77A
Case: I2PAK
Max. forward voltage: 1.45V
Reverse recovery time: 60ns
Produkt ist nicht verfügbar
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P6SMBJ28CAJ pVersion=0046&contRep=ZT&docId=005056AB281E1EDF93CADF9A40DCA0D6&compId=P6SMBJ.pdf?ci_sign=549054d3bd78afb23b6bad8a4db93bf1e0463454
Hersteller: WeEn Semiconductors
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 31.33÷34.16V; 13.3A; bidirectional; SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 28V
Breakdown voltage: 31.33...34.16V
Max. forward impulse current: 13.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Produkt ist nicht verfügbar
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BTA208X-1000C0,127 bta208x-1000c0.pdf
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 1kV; 8A; TO220FP; Igt: 35mA; Ifsm: 71A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 1kV
Max. load current: 8A
Case: TO220FP
Gate current: 35mA
Max. forward impulse current: 71A
Technology: 3Q; Hi-Com
Features of semiconductor devices: high commutation
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
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BTA208X-1000C0/L01 bta208x-1000c0.pdf
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 1kV; 8A; TO220FP; Igt: 35mA; Ifsm: 71A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 1kV
Max. load current: 8A
Case: TO220FP
Gate current: 35mA
Max. forward impulse current: 71A
Technology: 3Q; Hi-Com
Features of semiconductor devices: high commutation
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
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BYV34-400,127 byv34-400.pdf
BYV34-400,127
Hersteller: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 10Ax2; tube; Ifsm: 120A; SOT78,TO220AB
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 10A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 120A
Case: SOT78; TO220AB
Max. forward voltage: 0.87V
Max. load current: 20A
Heatsink thickness: 1.25...1.4mm
auf Bestellung 1405 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
36+2 EUR
51+1.41 EUR
86+0.84 EUR
91+0.79 EUR
Mindestbestellmenge: 36
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BYV32E-100,127 byv32e-100.pdf BYV32E-100.pdf
BYV32E-100,127
Hersteller: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 10Ax2; tube; Ifsm: 137A; SOT78,TO220AB
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 10A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 137A
Case: SOT78; TO220AB
Max. forward voltage: 0.85V
Max. load current: 20A
Reverse recovery time: 25ns
Heatsink thickness: 1.25...1.4mm
auf Bestellung 501 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
85+0.84 EUR
100+0.72 EUR
114+0.63 EUR
125+0.57 EUR
250+0.55 EUR
Mindestbestellmenge: 85
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BYV32E-150,127 byv32e-150.pdf
BYV32E-150,127
Hersteller: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 150V; 10Ax2; tube; Ifsm: 137A; SOT78,TO220AB
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 150V
Load current: 10A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 137A
Case: SOT78; TO220AB
Max. forward voltage: 0.85V
Max. load current: 20A
Heatsink thickness: 1.25...1.4mm
Reverse recovery time: 25ns
auf Bestellung 203 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
85+0.84 EUR
100+0.72 EUR
114+0.63 EUR
125+0.57 EUR
Mindestbestellmenge: 85
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BYV42E-150,127 byv42e-200.pdf
BYV42E-150,127
Hersteller: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 150V; 15Ax2; tube; Ifsm: 150A; SOT78,TO220AB
Case: SOT78; TO220AB
Type of diode: rectifying
Kind of package: tube
Mounting: THT
Features of semiconductor devices: ultrafast switching
Reverse recovery time: 28ns
Heatsink thickness: max. 1.3mm
Max. load current: 30A
Max. forward voltage: 0.78V
Load current: 15A x2
Max. forward impulse current: 150A
Max. off-state voltage: 150V
Semiconductor structure: common cathode; double
auf Bestellung 345 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
48+1.5 EUR
61+1.18 EUR
68+1.06 EUR
73+0.98 EUR
100+0.9 EUR
250+0.82 EUR
Mindestbestellmenge: 48
Im Einkaufswagen  Stück im Wert von  UAH
BYV32EB-200,118 pVersion=0046&contRep=ZT&docId=005056AB752F1ED78292AEACF3A20259&compId=BYV32EB-200.pdf?ci_sign=9e0a942a6acdf47060359758fe6cbdfc3375fc40 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36
BYV32EB-200,118
Hersteller: WeEn Semiconductors
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 10Ax2; 25ns; D2PAK,SOT404; Ifsm: 137A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 10A x2
Reverse recovery time: 25ns
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Case: D2PAK; SOT404
Max. forward voltage: 0.72V
Max. load current: 20A
Max. forward impulse current: 137A
Kind of package: reel; tape
auf Bestellung 624 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
34+2.13 EUR
58+1.25 EUR
66+1.09 EUR
73+0.98 EUR
75+0.96 EUR
100+0.88 EUR
250+0.76 EUR
500+0.67 EUR
Mindestbestellmenge: 34
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BTA208S-800B,118 pVersion=0046&contRep=ZT&docId=005056AB752F1ED782E2BA851CCE0259&compId=BTA208S-800B.pdf?ci_sign=ea3fc467ec030d7c6be7753fed7172ca79994f49 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36
BTA208S-800B,118
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 8A; D2PAK; Igt: 50mA; Ifsm: 65A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 8A
Case: D2PAK
Gate current: 50mA
Max. forward impulse current: 65A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
Produkt ist nicht verfügbar
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BTA208X-800B/L02Q bta208x-800b.pdf
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 8A; TO220FP; Igt: 50mA; Ifsm: 71A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 8A
Case: TO220FP
Gate current: 50mA
Max. forward impulse current: 71A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
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BTA445Z-800BTQ bta445z-800ct.pdf
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 45A; SOT1292,TO3P; Igt: 50mA; Ifsm: 495A; 3Q,Hi-Com
Case: SOT1292; TO3P
Mounting: THT
Kind of package: tube
Type of thyristor: triac
Features of semiconductor devices: high temperature
Technology: 3Q; Hi-Com
Gate current: 50mA
Max. load current: 45A
Max. forward impulse current: 495A
Max. off-state voltage: 0.8kV
Produkt ist nicht verfügbar
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WNSC5D20650X6Q WNSC5D20650X6Q.pdf
WNSC5D20650X6Q
Hersteller: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO220FP-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A
Semiconductor structure: single diode
Case: TO220FP-2
Max. forward voltage: 2.2V
Max. load current: 40A
Max. forward impulse current: 80A
Kind of package: tube
auf Bestellung 922 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
27+2.69 EUR
30+2.4 EUR
34+2.13 EUR
100+1.92 EUR
Mindestbestellmenge: 27
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BTA308Y-800C0TQ bta308y-800c0t.pdf
BTA308Y-800C0TQ
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 8A; TO220AB; Igt: 35mA; Ifsm: 60A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 8A
Case: TO220AB
Gate current: 35mA
Max. forward impulse current: 60A
Technology: 3Q; Hi-Com
Features of semiconductor devices: high temperature; sensitive gate
Mounting: THT
Kind of package: tube
auf Bestellung 1551 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
70+1.03 EUR
126+0.57 EUR
147+0.49 EUR
166+0.43 EUR
175+0.41 EUR
Mindestbestellmenge: 70
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BTA308X-800B0Q bta308x-800b0.pdf
BTA308X-800B0Q
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 8A; TO220FP; Igt: 50mA; Ifsm: 60A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 8A
Case: TO220FP
Gate current: 50mA
Max. forward impulse current: 60A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
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BTA308S-800ETJ bta308s-800et.pdf
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 8A; DPAK; Igt: 10mA; Ifsm: 60A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 8A
Case: DPAK
Gate current: 10mA
Max. forward impulse current: 60A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
Produkt ist nicht verfügbar
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