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BTA316X-800B,127 BTA316X-800B,127 WeEn Semiconductors BTA316X-800B.pdf Category: Triacs
Description: Triac; 800V; 16A; Igt: 50mA; TO220FP; tube; Ifsm: 140A; 3Q,Hi-Com
Typ of triac: standard
Max. off-state voltage: 0.8kV
Max. load current: 16A
Gate current: 50mA
Case: TO220FP
Mounting: THT
Kind of package: tube
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
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BTA316B-800B,118 BTA316B-800B,118 WeEn Semiconductors BTA316B-800B.pdf Category: Triacs
Description: Triac; 800V; 16A; D2PAK; Igt: 50mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: D2PAK
Gate current: 50mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
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ACT108-800EQP ACT108-800EQP WeEn Semiconductors ACT108-800E.pdf Category: Thyristors - others
Description: Thyristor: AC switch; 800V; Ifmax: 0.8A; Igt: 10mA; TO92; THT
Type of thyristor: AC switch
Max. off-state voltage: 0.8kV
Max. load current: 0.8A
Gate current: 10mA
Case: TO92
Mounting: THT
Kind of package: reel; tape
Features of semiconductor devices: internally triggered
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BT148W-600R,115 BT148W-600R,115 WeEn Semiconductors BT148W-600R.pdf Category: SMD/THT thyristors
Description: Thyristor: standard; 600V; Ifmax: 1A; 0.6A; Igt: 50uA; SOT223; SMD
Type of thyristor: standard
Max. off-state voltage: 0.6kV
Max. load current: 1A
Load current: 0.6A
Gate current: 50µA
Case: SOT223
Mounting: SMD
Max. forward impulse current: 10A
Kind of package: reel; tape
Turn-on time: 2µs
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BT139-600.127 BT139-600.127 WeEn Semiconductors BT139-600.pdf _ween_psg2020.pdf Category: Triacs
Description: Triac; 600V; 16A; TO220AB; Igt: 35/70mA; Ifsm: 155A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: TO220AB
Gate current: 35/70mA
Mounting: THT
Kind of package: tube
Max. forward impulse current: 155A
Technology: 4Q
Features of semiconductor devices: sensitive gate
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BYW29ED-200,118 BYW29ED-200,118 WeEn Semiconductors BYW29ED-200.pdf _ween_psg2020.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 8A; 25ns; DPAK; Ufmax: 0.8V; Ifsm: 80A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 80A
Case: DPAK
Kind of package: reel; tape
Max. forward voltage: 0.8V
Reverse recovery time: 25ns
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BYV44-500,127 BYV44-500,127 WeEn Semiconductors BYV44_SERIES.pdf _ween_psg2020.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 500V; 15Ax2; Ifsm: 150A; SOT78,TO220AB; tube
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 500V
Load current: 15A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 150A
Case: SOT78; TO220AB
Kind of package: tube
Max. forward voltage: 1.15V
Max. load current: 30A
Heatsink thickness: max. 1.3mm
Reverse recovery time: 60ns
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SMBJ26AJ SMBJ26AJ WeEn Semiconductors SMBJ Series.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 29.12÷31.67V; 14.3A; unidirectional; SMB; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 26V
Breakdown voltage: 29.12...31.67V
Max. forward impulse current: 14.3A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
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ACT108-600E,126 ACT108-600E,126 WeEn Semiconductors ACT108-600E.pdf _ween_psg2020.pdf Category: Thyristors - others
Description: Thyristor: AC switch; 600V; Ifmax: 0.8A; Igt: 10mA; TO92; THT
Max. load current: 0.8A
Case: TO92
Mounting: THT
Kind of package: Ammo Pack
Features of semiconductor devices: internally triggered
Max. off-state voltage: 0.6kV
Type of thyristor: AC switch
Gate current: 10mA
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BTA225B-600B,118 BTA225B-600B,118 WeEn Semiconductors BTA225B-600B.pdf Category: Triacs
Description: Triac; 600V; 25A; D2PAK; Igt: 50mA; Ifsm: 190A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 25A
Case: D2PAK
Gate current: 50mA
Max. forward impulse current: 190A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
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BTA225B-800B,118 BTA225B-800B,118 WeEn Semiconductors BTA225B-800B.pdf _ween_psg2020.pdf Category: Triacs
Description: Triac; 800V; 25A; D2PAK; Igt: 50mA; Ifsm: 190A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 25A
Case: D2PAK
Gate current: 50mA
Technology: 3Q; Hi-Com
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: sensitive gate
Max. forward impulse current: 190A
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BTA225-800B,127 BTA225-800B,127 WeEn Semiconductors BTA225-800B.pdf _ween_psg2020.pdf Category: Triacs
Description: Triac; 800V; 25A; TO220AB; Igt: 50mA; Ifsm: 190A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 25A
Case: TO220AB
Gate current: 50mA
Max. forward impulse current: 190A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
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BTA203-800CTEP BTA203-800CTEP WeEn Semiconductors BTA203-800CT.pdf _ween_psg2020.pdf Category: Triacs
Description: Triac; 800V; 3A; Igt: 30mA; TO92; bulk; Ifsm: 27A; 3Q,Hi-Com
Typ of triac: standard
Max. off-state voltage: 0.8kV
Max. load current: 3A
Gate current: 30mA
Case: TO92
Mounting: THT
Kind of package: bulk
Technology: 3Q; Hi-Com
Max. forward impulse current: 27A
Features of semiconductor devices: sensitive gate
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BTA225-600B,127 BTA225-600B,127 WeEn Semiconductors BTA225-600B.pdf Category: Triacs
Description: Triac; 600V; 25A; TO220AB; Igt: 50mA; Ifsm: 190A; 3Q,Hi-Com
Gate current: 50mA
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Max. off-state voltage: 0.6kV
Max. load current: 25A
Kind of package: tube
Case: TO220AB
Type of thyristor: triac
Mounting: THT
Max. forward impulse current: 190A
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BTA206X-800CT/DGQ BTA206X-800CT/DGQ WeEn Semiconductors BTA206X-800CT%20Product%20Rev.04.pdf Category: Triacs
Description: Triac; 800V; 6A; Igt: 35mA; TO220AB; tube; Ifsm: 66A; 3Q,Hi-Com
Typ of triac: standard
Max. off-state voltage: 0.8kV
Max. load current: 6A
Gate current: 35mA
Case: TO220AB
Mounting: THT
Kind of package: tube
Technology: 3Q; Hi-Com
Max. forward impulse current: 66A
Features of semiconductor devices: high temperature
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BT155K-1200TQ BT155K-1200TQ WeEn Semiconductors BT155K-1200T.pdf _ween_psg2020.pdf Category: SMD/THT thyristors
Description: Thyristor: standard; 1.2kV; Ifmax: 79A; 50A; Igt: 50mA; SOT1259,TO3P
Type of thyristor: standard
Max. off-state voltage: 1.2kV
Max. load current: 79A
Load current: 50A
Gate current: 50mA
Case: SOT1259; TO3P
Mounting: THT
Max. forward impulse current: 0.65kA
Turn-on time: 2µs
Kind of package: tube
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BT155W-1200TQ BT155W-1200TQ WeEn Semiconductors BT155W-1200T.pdf _ween_psg2020.pdf Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 79A; 50A; Igt: 50mA; SOT429,TO247-3; THT
Max. off-state voltage: 1.2kV
Load current: 50A
Case: SOT429; TO247-3
Mounting: THT
Max. load current: 79A
Max. forward impulse current: 0.65kA
Kind of package: tube
Turn-on time: 2µs
Gate current: 50mA
Type of thyristor: thyristor
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BT155Z-1200TQ BT155Z-1200TQ WeEn Semiconductors BT155Z-1200T.pdf _ween_psg2020.pdf Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 79A; 50A; Igt: 50mA; SOT1292,TOP3I; THT
Max. off-state voltage: 1.2kV
Load current: 50A
Case: SOT1292; TOP3I
Mounting: THT
Max. load current: 79A
Max. forward impulse current: 0.65kA
Kind of package: tube
Turn-on time: 2µs
Gate current: 50mA
Type of thyristor: thyristor
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BT155W-1200T-AQ BT155W-1200T-AQ WeEn Semiconductors BT155W-1200T-AQ.pdf _ween_psg2020.pdf Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 79A; 50A; Igt: 3mA; SOT429,TO247-3; THT
Max. off-state voltage: 1.2kV
Load current: 50A
Case: SOT429; TO247-3
Mounting: THT
Max. load current: 79A
Max. forward impulse current: 0.65kA
Kind of package: tube
Application: automotive industry
Turn-on time: 2µs
Gate current: 3mA
Type of thyristor: thyristor
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BT158W-1200TQ BT158W-1200TQ WeEn Semiconductors BT158W-1200T.pdf _ween_psg2020.pdf Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 126A; 80A; Igt: 70mA; SOT429,TO247-3; THT
Type of thyristor: thyristor
Max. off-state voltage: 1.2kV
Max. load current: 126A
Load current: 80A
Gate current: 70mA
Case: SOT429; TO247-3
Mounting: THT
Kind of package: tube
Max. forward impulse current: 1.1kA
Turn-on time: 2µs
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BT150S-600R,118 BT150S-600R,118 WeEn Semiconductors BT150S-600R.pdf Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 4A; 2.5A; Igt: 15uA; DPAK; SMD; reel,tape
Type of thyristor: thyristor
Max. off-state voltage: 0.6kV
Max. load current: 4A
Load current: 2.5A
Gate current: 15µA
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 35A
Turn-on time: 2µs
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WNS30H100CBJ WNS30H100CBJ WeEn Semiconductors WNS30H100CB.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 100V; 15Ax2; reel,tape
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Max. off-state voltage: 0.1kV
Load current: 15A x2
Max. load current: 30A
Semiconductor structure: common cathode; double
Type of diode: Schottky rectifying
Max. forward impulse current: 330A
Max. forward voltage: 0.67V
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PHE13005,127 PHE13005,127 WeEn Semiconductors PHE13005.pdf Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 400V; 4A; 75W; TO220AB
Mounting: THT
Collector-emitter voltage: 400V
Power dissipation: 75W
Polarisation: bipolar
Type of transistor: NPN
Current gain: 10...40
Kind of package: tube
Case: TO220AB
Collector current: 4A
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BT148-400R,127 BT148-400R,127 WeEn Semiconductors BT148-400R.pdf Category: SMD/THT thyristors
Description: Thyristor; 400V; Ifmax: 4A; 2.5A; Igt: 15uA; SIP3,SOT82; THT; tube
Mounting: THT
Max. forward impulse current: 35A
Gate current: 15µA
Max. off-state voltage: 0.4kV
Turn-on time: 2µs
Load current: 2.5A
Max. load current: 4A
Kind of package: tube
Case: SIP3; SOT82
Type of thyristor: thyristor
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BT148-500R,127 BT148-500R,127 WeEn Semiconductors BT148-500R.pdf Category: SMD/THT thyristors
Description: Thyristor; 500V; Ifmax: 4A; 2.5A; Igt: 15uA; SIP3,SOT82; THT; tube
Mounting: THT
Max. forward impulse current: 35A
Gate current: 15µA
Max. off-state voltage: 500V
Turn-on time: 2µs
Load current: 2.5A
Max. load current: 4A
Kind of package: tube
Case: SIP3; SOT82
Type of thyristor: thyristor
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NXPSC206506Q NXPSC206506Q WeEn Semiconductors nxpsc20650.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 1.7V
Max. forward impulse current: 100A
Kind of package: tube
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NXPSC20650W-AQ NXPSC20650W-AQ WeEn Semiconductors NXPSC20650W-A.pdf _ween_psg2020.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 2.1V
Max. forward impulse current: 50A
Kind of package: tube
Application: automotive industry
Max. load current: 20A
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NXPSC20650W6Q NXPSC20650W6Q WeEn Semiconductors nxpsc20650w.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 1.7V
Max. forward impulse current: 50A
Kind of package: tube
Max. load current: 20A
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WNSC6D20650B6J WNSC6D20650B6J WeEn Semiconductors WNSC6D20650B6J.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SiC; SMD; 650V; 20A; reel,tape
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Technology: SiC
Max. off-state voltage: 650V
Load current: 20A
Max. load current: 40A
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Max. forward impulse current: 120A
Max. forward voltage: 1.8V
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NXPLQSC20650W6Q NXPLQSC20650W6Q WeEn Semiconductors nxplqsc20650w.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 1.85V
Max. forward impulse current: 48A
Kind of package: tube
Max. load current: 20A
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WNSC2D20650CJQ WNSC2D20650CJQ WeEn Semiconductors WNSC2D20650CJ%20%281%29.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; SOT1293,TO3PF
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: SOT1293; TO3PF
Max. forward voltage: 1.8V
Max. forward impulse current: 50A
Kind of package: tube
Max. load current: 20A
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WNSC2D20650CWQ WNSC2D20650CWQ WeEn Semiconductors WNSC2D20650CW.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 1.8V
Max. forward impulse current: 50A
Kind of package: tube
Max. load current: 20A
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WNSC6D20650WQ WNSC6D20650WQ WeEn Semiconductors WNSC6D20650W.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO247-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A
Semiconductor structure: single diode
Case: TO247-2
Max. forward voltage: 1.4V
Max. forward impulse current: 155A
Kind of package: tube
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ACT102H-600D,118 ACT102H-600D,118 WeEn Semiconductors ACT102H-600D.pdf _ween_psg2020.pdf Category: Thyristors - others
Description: Thyristor: AC switch; 600V; Ifmax: 0.2A; Igt: 5mA; SO8; SMD
Type of thyristor: AC switch
Max. off-state voltage: 0.6kV
Max. load current: 0.2A
Gate current: 5mA
Case: SO8
Mounting: SMD
Features of semiconductor devices: internally triggered
Kind of package: reel; tape
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BT137X-600/DG,127 BT137X-600/DG,127 WeEn Semiconductors BT137X-600.pdf Category: Triacs
Description: Triac; 600V; 8A; Igt: 35/70mA; TO220FP; tube; Ifsm: 65A; 4Q
Features of semiconductor devices: sensitive gate
Max. off-state voltage: 0.6kV
Max. load current: 8A
Kind of package: tube
Case: TO220FP
Typ of triac: standard
Mounting: THT
Max. forward impulse current: 65A
Gate current: 35/70mA
Technology: 4Q
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BTA425Z-800BTQ BTA425Z-800BTQ WeEn Semiconductors BTA425Z-800BT.pdf Category: Triacs
Description: Triac; 800V; 25A; Igt: 50mA; SOT1292,TO3P; tube; Ifsm: 250A
Max. forward impulse current: 250A
Gate current: 50mA
Technology: 3Q; Hi-Com
Features of semiconductor devices: high temperature; sensitive gate
Max. off-state voltage: 0.8kV
Max. load current: 25A
Kind of package: tube
Case: SOT1292; TO3P
Typ of triac: standard
Mounting: THT
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BTA425Y-800BTQ BTA425Y-800BTQ WeEn Semiconductors _ween_psg2020.pdf Category: Triacs
Description: Triac; 800V; 25A; TO220AB; Igt: 50mA; Ifsm: 250A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 25A
Case: TO220AB
Gate current: 50mA
Max. forward impulse current: 250A
Technology: 3Q; Hi-Com
Features of semiconductor devices: high temperature; sensitive gate
Mounting: THT
Kind of package: tube
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BTA425X-800BTQ BTA425X-800BTQ WeEn Semiconductors BTA425X-800BT.pdf Category: Triacs
Description: Triac; 800V; 25A; TO220FP; Igt: 50mA; Ifsm: 250A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 25A
Case: TO220FP
Gate current: 50mA
Max. forward impulse current: 250A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
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BTA420X-800BT,127 BTA420X-800BT,127 WeEn Semiconductors BTA420X-800BT.pdf Category: Triacs
Description: Triac; 800V; 20A; TO220FP; Igt: 50mA; Ifsm: 200A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 20A
Case: TO220FP
Gate current: 50mA
Max. forward impulse current: 200A
Technology: 3Q; Hi-Com
Features of semiconductor devices: high temperature; sensitive gate
Mounting: THT
Kind of package: tube
auf Bestellung 303 Stücke:
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BYC10-600,127 BYC10-600,127 WeEn Semiconductors BYC10-600.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10A; Ifsm: 65A; SOD59,TO220AC; tube
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 10A
Reverse recovery time: 19ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SOD59; TO220AC
Max. forward voltage: 1.4V
Max. forward impulse current: 65A
Kind of package: tube
auf Bestellung 227 Stücke:
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BTA420-800CT,127 BTA420-800CT,127 WeEn Semiconductors BTA420-800CT.pdf Category: Triacs
Description: Triac; 800V; 20A; TO220AB; Igt: 35mA; Ifsm: 200A; 3Q,Hi-Com
Case: TO220AB
Mounting: THT
Kind of package: tube
Gate current: 35mA
Features of semiconductor devices: high temperature; sensitive gate
Type of thyristor: triac
Technology: 3Q; Hi-Com
Max. load current: 20A
Max. forward impulse current: 200A
Max. off-state voltage: 0.8kV
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BTA420X-800CT,127 BTA420X-800CT,127 WeEn Semiconductors BTA420X-800CT.pdf Category: Triacs
Description: Triac; 800V; 20A; TO220FP; Igt: 35mA; Ifsm: 200A; 3Q,Hi-Com
Case: TO220FP
Mounting: THT
Kind of package: tube
Gate current: 35mA
Features of semiconductor devices: high temperature; sensitive gate
Type of thyristor: triac
Technology: 3Q; Hi-Com
Max. load current: 20A
Max. forward impulse current: 200A
Max. off-state voltage: 0.8kV
Produkt ist nicht verfügbar
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BTA420-800BT,127 BTA420-800BT,127 WeEn Semiconductors BTA420-800BT.pdf Category: Triacs
Description: Triac; 800V; 20A; TO220AB; Igt: 50mA; Ifsm: 200A; 3Q,Hi-Com
Case: TO220AB
Mounting: THT
Kind of package: tube
Gate current: 50mA
Features of semiconductor devices: high temperature; sensitive gate
Type of thyristor: triac
Technology: 3Q; Hi-Com
Max. load current: 20A
Max. forward impulse current: 200A
Max. off-state voltage: 0.8kV
Produkt ist nicht verfügbar
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BTA420X-800CT/L02Q BTA420X-800CT/L02Q WeEn Semiconductors BTA420X-800CT.pdf Category: Triacs
Description: Triac; 800V; 20A; TO220FP; Igt: 35mA; Ifsm: 200A; 3Q,Hi-Com
Case: TO220FP
Mounting: THT
Kind of package: tube
Gate current: 35mA
Features of semiconductor devices: high temperature; sensitive gate
Type of thyristor: triac
Technology: 3Q; Hi-Com
Max. load current: 20A
Max. forward impulse current: 200A
Max. off-state voltage: 0.8kV
Produkt ist nicht verfügbar
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BTA420Y-800BT,127 BTA420Y-800BT,127 WeEn Semiconductors BTA420Y-800BT.pdf Category: Triacs
Description: Triac; 800V; 20A; TO220AB; Igt: 50mA; Ifsm: 220A; 3Q,Hi-Com
Case: TO220AB
Mounting: THT
Kind of package: tube
Gate current: 50mA
Features of semiconductor devices: high temperature; sensitive gate
Type of thyristor: triac
Technology: 3Q; Hi-Com
Max. load current: 20A
Max. forward impulse current: 220A
Max. off-state voltage: 0.8kV
Produkt ist nicht verfügbar
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BTA420Y-800CT,127 BTA420Y-800CT,127 WeEn Semiconductors BTA420Y-800CT.pdf Category: Triacs
Description: Triac; 800V; 20A; TO220AB; Igt: 35mA; Ifsm: 200A; 3Q,Hi-Com
Case: TO220AB
Mounting: THT
Kind of package: tube
Gate current: 35mA
Features of semiconductor devices: high temperature; sensitive gate
Type of thyristor: triac
Technology: 3Q; Hi-Com
Max. load current: 20A
Max. forward impulse current: 200A
Max. off-state voltage: 0.8kV
Produkt ist nicht verfügbar
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MURS360BJ MURS360BJ WeEn Semiconductors MURS360B.pdf _ween_psg2020.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 3A; 50ns; SMB; Ufmax: 0.88V; Ifsm: 100A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 3A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SMB
Max. forward voltage: 0.88V
Max. forward impulse current: 100A
Kind of package: reel; tape
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WSJM65R099DQ WSJM65R099DQ WeEn Semiconductors WSJM65R099DQ.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; Idm: 128A; 240W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Pulsed drain current: 128A
Power dissipation: 240W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 99mΩ
Mounting: THT
Gate charge: 57nC
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
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WSJM65R099DTLJ WeEn Semiconductors WSJM65R099DTLJ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 16A; Idm: 100A; 147W; TOLL; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 16A
Pulsed drain current: 100A
Power dissipation: 147W
Case: TOLL
Gate-source voltage: ±30V
On-state resistance: 99mΩ
Mounting: SMD
Gate charge: 57nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
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BTA316X-800E,127 BTA316X-800E,127 WeEn Semiconductors BTA316X-800E.PDF Category: Triacs
Description: Triac; 800V; 16A; Igt: 10mA; TO220FP; tube; Ifsm: 140A; 3Q,Hi-Com
Typ of triac: standard
Max. off-state voltage: 0.8kV
Max. load current: 16A
Gate current: 10mA
Case: TO220FP
Mounting: THT
Kind of package: tube
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
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BTA316B-800E,118 BTA316B-800E,118 WeEn Semiconductors BTA316B-800E.pdf Category: Triacs
Description: Triac; 800V; 16A; Igt: 10mA; D2PAK; reel,tape; Ifsm: 140A; 3Q,Hi-Com
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 140A
Gate current: 10mA
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Max. off-state voltage: 0.8kV
Max. load current: 16A
Typ of triac: standard
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BTA316B-600E,118 BTA316B-600E,118 WeEn Semiconductors BTA316B-600E.pdf _ween_psg2020.pdf Category: Triacs
Description: Triac; 600V; 16A; Igt: 10mA; D2PAK; reel,tape; Ifsm: 140A; 3Q,Hi-Com
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 140A
Gate current: 10mA
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Max. off-state voltage: 0.6kV
Max. load current: 16A
Typ of triac: standard
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BTA316-600C,127 BTA316-600C,127 WeEn Semiconductors BTA316-600C.pdf _ween_psg2020.pdf Category: Triacs
Description: Triac; 600V; 16A; Igt: 35mA; TO220AB; tube; Ifsm: 140A; 3Q,Hi-Com
Case: TO220AB
Mounting: THT
Kind of package: tube
Max. forward impulse current: 140A
Gate current: 35mA
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Max. off-state voltage: 0.6kV
Max. load current: 16A
Typ of triac: standard
auf Bestellung 79 Stücke:
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BTA316-600BT,127 BTA316-600BT,127 WeEn Semiconductors BTA316-600BT.pdf _ween_psg2020.pdf Category: Triacs
Description: Triac; 600V; 16A; TO220AB; Igt: 50mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: TO220AB
Gate current: 50mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: high temperature; sensitive gate
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
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BTA316-600E,127 BTA316-600E,127 WeEn Semiconductors BTA316-600E.pdf Category: Triacs
Description: Triac; 600V; 16A; TO220AB; Igt: 10mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: TO220AB
Gate current: 10mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
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BTA316X-800C,127 BTA316X-800C,127 WeEn Semiconductors BTA316X-800C.pdf Category: Triacs
Description: Triac; 800V; 16A; TO220FP; Igt: 35mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: TO220FP
Gate current: 35mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
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BTA316-800CTQ BTA316-800CTQ WeEn Semiconductors BTA316-800CT.pdf Category: Triacs
Description: Triac; 800V; 16A; Igt: 35mA; TO220AB; tube; Ifsm: 150A; 3Q,Hi-Com
Typ of triac: standard
Max. off-state voltage: 0.8kV
Max. load current: 16A
Gate current: 35mA
Case: TO220AB
Mounting: THT
Kind of package: tube
Max. forward impulse current: 150A
Technology: 3Q; Hi-Com
Features of semiconductor devices: high temperature
auf Bestellung 1740 Stücke:
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BTA316-600ET/DGQ BTA316-600ET/DGQ WeEn Semiconductors BTA316-600ET.pdf Category: Triacs
Description: Triac; 600V; 16A; Igt: 10mA; TO220AB; tube; Ifsm: 140A; 3Q,Hi-Com
Case: TO220AB
Mounting: THT
Kind of package: tube
Max. forward impulse current: 140A
Gate current: 10mA
Technology: 3Q; Hi-Com
Features of semiconductor devices: high temperature; sensitive gate
Max. off-state voltage: 0.6kV
Max. load current: 16A
Typ of triac: standard
Produkt ist nicht verfügbar
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SMCJ58AJ SMCJ58AJ WeEn Semiconductors SMCJ Series.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 65÷70.6V; 16.1A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 58V
Breakdown voltage: 65...70.6V
Max. forward impulse current: 16.1A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMCJ
Produkt ist nicht verfügbar
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WNSC16650CWQ WNSC16650CWQ WeEn Semiconductors WNSC16650CWQ.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8Ax2; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 1.7V
Max. forward impulse current: 48A
Kind of package: tube
Max. load current: 16A
Produkt ist nicht verfügbar
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BTA316X-800B,127 BTA316X-800B.pdf
BTA316X-800B,127
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 16A; Igt: 50mA; TO220FP; tube; Ifsm: 140A; 3Q,Hi-Com
Typ of triac: standard
Max. off-state voltage: 0.8kV
Max. load current: 16A
Gate current: 50mA
Case: TO220FP
Mounting: THT
Kind of package: tube
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
auf Bestellung 240 Stücke:
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BTA316B-800B,118 BTA316B-800B.pdf
BTA316B-800B,118
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 16A; D2PAK; Igt: 50mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: D2PAK
Gate current: 50mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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ACT108-800EQP ACT108-800E.pdf
ACT108-800EQP
Hersteller: WeEn Semiconductors
Category: Thyristors - others
Description: Thyristor: AC switch; 800V; Ifmax: 0.8A; Igt: 10mA; TO92; THT
Type of thyristor: AC switch
Max. off-state voltage: 0.8kV
Max. load current: 0.8A
Gate current: 10mA
Case: TO92
Mounting: THT
Kind of package: reel; tape
Features of semiconductor devices: internally triggered
auf Bestellung 9197 Stücke:
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BT148W-600R,115 BT148W-600R.pdf
BT148W-600R,115
Hersteller: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor: standard; 600V; Ifmax: 1A; 0.6A; Igt: 50uA; SOT223; SMD
Type of thyristor: standard
Max. off-state voltage: 0.6kV
Max. load current: 1A
Load current: 0.6A
Gate current: 50µA
Case: SOT223
Mounting: SMD
Max. forward impulse current: 10A
Kind of package: reel; tape
Turn-on time: 2µs
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BT139-600.127 BT139-600.pdf _ween_psg2020.pdf
BT139-600.127
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 16A; TO220AB; Igt: 35/70mA; Ifsm: 155A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: TO220AB
Gate current: 35/70mA
Mounting: THT
Kind of package: tube
Max. forward impulse current: 155A
Technology: 4Q
Features of semiconductor devices: sensitive gate
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BYW29ED-200,118 BYW29ED-200.pdf _ween_psg2020.pdf
BYW29ED-200,118
Hersteller: WeEn Semiconductors
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 8A; 25ns; DPAK; Ufmax: 0.8V; Ifsm: 80A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 80A
Case: DPAK
Kind of package: reel; tape
Max. forward voltage: 0.8V
Reverse recovery time: 25ns
auf Bestellung 689 Stücke:
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BYV44-500,127 BYV44_SERIES.pdf _ween_psg2020.pdf
BYV44-500,127
Hersteller: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 500V; 15Ax2; Ifsm: 150A; SOT78,TO220AB; tube
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 500V
Load current: 15A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 150A
Case: SOT78; TO220AB
Kind of package: tube
Max. forward voltage: 1.15V
Max. load current: 30A
Heatsink thickness: max. 1.3mm
Reverse recovery time: 60ns
Produkt ist nicht verfügbar
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SMBJ26AJ SMBJ Series.pdf
SMBJ26AJ
Hersteller: WeEn Semiconductors
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 29.12÷31.67V; 14.3A; unidirectional; SMB; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 26V
Breakdown voltage: 29.12...31.67V
Max. forward impulse current: 14.3A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
Produkt ist nicht verfügbar
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ACT108-600E,126 ACT108-600E.pdf _ween_psg2020.pdf
ACT108-600E,126
Hersteller: WeEn Semiconductors
Category: Thyristors - others
Description: Thyristor: AC switch; 600V; Ifmax: 0.8A; Igt: 10mA; TO92; THT
Max. load current: 0.8A
Case: TO92
Mounting: THT
Kind of package: Ammo Pack
Features of semiconductor devices: internally triggered
Max. off-state voltage: 0.6kV
Type of thyristor: AC switch
Gate current: 10mA
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BTA225B-600B,118 BTA225B-600B.pdf
BTA225B-600B,118
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 25A; D2PAK; Igt: 50mA; Ifsm: 190A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 25A
Case: D2PAK
Gate current: 50mA
Max. forward impulse current: 190A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
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BTA225B-800B,118 BTA225B-800B.pdf _ween_psg2020.pdf
BTA225B-800B,118
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 25A; D2PAK; Igt: 50mA; Ifsm: 190A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 25A
Case: D2PAK
Gate current: 50mA
Technology: 3Q; Hi-Com
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: sensitive gate
Max. forward impulse current: 190A
auf Bestellung 502 Stücke:
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BTA225-800B,127 BTA225-800B.pdf _ween_psg2020.pdf
BTA225-800B,127
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 25A; TO220AB; Igt: 50mA; Ifsm: 190A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 25A
Case: TO220AB
Gate current: 50mA
Max. forward impulse current: 190A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
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BTA203-800CTEP BTA203-800CT.pdf _ween_psg2020.pdf
BTA203-800CTEP
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 3A; Igt: 30mA; TO92; bulk; Ifsm: 27A; 3Q,Hi-Com
Typ of triac: standard
Max. off-state voltage: 0.8kV
Max. load current: 3A
Gate current: 30mA
Case: TO92
Mounting: THT
Kind of package: bulk
Technology: 3Q; Hi-Com
Max. forward impulse current: 27A
Features of semiconductor devices: sensitive gate
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BTA225-600B,127 BTA225-600B.pdf
BTA225-600B,127
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 25A; TO220AB; Igt: 50mA; Ifsm: 190A; 3Q,Hi-Com
Gate current: 50mA
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Max. off-state voltage: 0.6kV
Max. load current: 25A
Kind of package: tube
Case: TO220AB
Type of thyristor: triac
Mounting: THT
Max. forward impulse current: 190A
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BTA206X-800CT/DGQ BTA206X-800CT%20Product%20Rev.04.pdf
BTA206X-800CT/DGQ
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 6A; Igt: 35mA; TO220AB; tube; Ifsm: 66A; 3Q,Hi-Com
Typ of triac: standard
Max. off-state voltage: 0.8kV
Max. load current: 6A
Gate current: 35mA
Case: TO220AB
Mounting: THT
Kind of package: tube
Technology: 3Q; Hi-Com
Max. forward impulse current: 66A
Features of semiconductor devices: high temperature
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BT155K-1200TQ BT155K-1200T.pdf _ween_psg2020.pdf
BT155K-1200TQ
Hersteller: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor: standard; 1.2kV; Ifmax: 79A; 50A; Igt: 50mA; SOT1259,TO3P
Type of thyristor: standard
Max. off-state voltage: 1.2kV
Max. load current: 79A
Load current: 50A
Gate current: 50mA
Case: SOT1259; TO3P
Mounting: THT
Max. forward impulse current: 0.65kA
Turn-on time: 2µs
Kind of package: tube
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BT155W-1200TQ BT155W-1200T.pdf _ween_psg2020.pdf
BT155W-1200TQ
Hersteller: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 79A; 50A; Igt: 50mA; SOT429,TO247-3; THT
Max. off-state voltage: 1.2kV
Load current: 50A
Case: SOT429; TO247-3
Mounting: THT
Max. load current: 79A
Max. forward impulse current: 0.65kA
Kind of package: tube
Turn-on time: 2µs
Gate current: 50mA
Type of thyristor: thyristor
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BT155Z-1200TQ BT155Z-1200T.pdf _ween_psg2020.pdf
BT155Z-1200TQ
Hersteller: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 79A; 50A; Igt: 50mA; SOT1292,TOP3I; THT
Max. off-state voltage: 1.2kV
Load current: 50A
Case: SOT1292; TOP3I
Mounting: THT
Max. load current: 79A
Max. forward impulse current: 0.65kA
Kind of package: tube
Turn-on time: 2µs
Gate current: 50mA
Type of thyristor: thyristor
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BT155W-1200T-AQ BT155W-1200T-AQ.pdf _ween_psg2020.pdf
BT155W-1200T-AQ
Hersteller: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 79A; 50A; Igt: 3mA; SOT429,TO247-3; THT
Max. off-state voltage: 1.2kV
Load current: 50A
Case: SOT429; TO247-3
Mounting: THT
Max. load current: 79A
Max. forward impulse current: 0.65kA
Kind of package: tube
Application: automotive industry
Turn-on time: 2µs
Gate current: 3mA
Type of thyristor: thyristor
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BT158W-1200TQ BT158W-1200T.pdf _ween_psg2020.pdf
BT158W-1200TQ
Hersteller: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 126A; 80A; Igt: 70mA; SOT429,TO247-3; THT
Type of thyristor: thyristor
Max. off-state voltage: 1.2kV
Max. load current: 126A
Load current: 80A
Gate current: 70mA
Case: SOT429; TO247-3
Mounting: THT
Kind of package: tube
Max. forward impulse current: 1.1kA
Turn-on time: 2µs
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BT150S-600R,118 BT150S-600R.pdf
BT150S-600R,118
Hersteller: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 4A; 2.5A; Igt: 15uA; DPAK; SMD; reel,tape
Type of thyristor: thyristor
Max. off-state voltage: 0.6kV
Max. load current: 4A
Load current: 2.5A
Gate current: 15µA
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 35A
Turn-on time: 2µs
Produkt ist nicht verfügbar
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WNS30H100CBJ WNS30H100CB.pdf
WNS30H100CBJ
Hersteller: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 100V; 15Ax2; reel,tape
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Max. off-state voltage: 0.1kV
Load current: 15A x2
Max. load current: 30A
Semiconductor structure: common cathode; double
Type of diode: Schottky rectifying
Max. forward impulse current: 330A
Max. forward voltage: 0.67V
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PHE13005,127 PHE13005.pdf
PHE13005,127
Hersteller: WeEn Semiconductors
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 400V; 4A; 75W; TO220AB
Mounting: THT
Collector-emitter voltage: 400V
Power dissipation: 75W
Polarisation: bipolar
Type of transistor: NPN
Current gain: 10...40
Kind of package: tube
Case: TO220AB
Collector current: 4A
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BT148-400R,127 BT148-400R.pdf
BT148-400R,127
Hersteller: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 400V; Ifmax: 4A; 2.5A; Igt: 15uA; SIP3,SOT82; THT; tube
Mounting: THT
Max. forward impulse current: 35A
Gate current: 15µA
Max. off-state voltage: 0.4kV
Turn-on time: 2µs
Load current: 2.5A
Max. load current: 4A
Kind of package: tube
Case: SIP3; SOT82
Type of thyristor: thyristor
auf Bestellung 990 Stücke:
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BT148-500R,127 BT148-500R.pdf
BT148-500R,127
Hersteller: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 500V; Ifmax: 4A; 2.5A; Igt: 15uA; SIP3,SOT82; THT; tube
Mounting: THT
Max. forward impulse current: 35A
Gate current: 15µA
Max. off-state voltage: 500V
Turn-on time: 2µs
Load current: 2.5A
Max. load current: 4A
Kind of package: tube
Case: SIP3; SOT82
Type of thyristor: thyristor
Produkt ist nicht verfügbar
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NXPSC206506Q nxpsc20650.pdf
NXPSC206506Q
Hersteller: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 1.7V
Max. forward impulse current: 100A
Kind of package: tube
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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NXPSC20650W-AQ NXPSC20650W-A.pdf _ween_psg2020.pdf
NXPSC20650W-AQ
Hersteller: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 2.1V
Max. forward impulse current: 50A
Kind of package: tube
Application: automotive industry
Max. load current: 20A
Produkt ist nicht verfügbar
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NXPSC20650W6Q nxpsc20650w.pdf
NXPSC20650W6Q
Hersteller: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 1.7V
Max. forward impulse current: 50A
Kind of package: tube
Max. load current: 20A
Produkt ist nicht verfügbar
Mindestbestellmenge: 240 Stücke
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WNSC6D20650B6J WNSC6D20650B6J.pdf
WNSC6D20650B6J
Hersteller: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SiC; SMD; 650V; 20A; reel,tape
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Technology: SiC
Max. off-state voltage: 650V
Load current: 20A
Max. load current: 40A
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Max. forward impulse current: 120A
Max. forward voltage: 1.8V
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NXPLQSC20650W6Q nxplqsc20650w.pdf
NXPLQSC20650W6Q
Hersteller: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 1.85V
Max. forward impulse current: 48A
Kind of package: tube
Max. load current: 20A
Produkt ist nicht verfügbar
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WNSC2D20650CJQ WNSC2D20650CJ%20%281%29.pdf
WNSC2D20650CJQ
Hersteller: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; SOT1293,TO3PF
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: SOT1293; TO3PF
Max. forward voltage: 1.8V
Max. forward impulse current: 50A
Kind of package: tube
Max. load current: 20A
Produkt ist nicht verfügbar
Mindestbestellmenge: 2400 Stücke
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WNSC2D20650CWQ WNSC2D20650CW.pdf
WNSC2D20650CWQ
Hersteller: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 1.8V
Max. forward impulse current: 50A
Kind of package: tube
Max. load current: 20A
Produkt ist nicht verfügbar
Mindestbestellmenge: 480 Stücke
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WNSC6D20650WQ WNSC6D20650W.pdf
WNSC6D20650WQ
Hersteller: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO247-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A
Semiconductor structure: single diode
Case: TO247-2
Max. forward voltage: 1.4V
Max. forward impulse current: 155A
Kind of package: tube
Produkt ist nicht verfügbar
Mindestbestellmenge: 1200 Stücke
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ACT102H-600D,118 ACT102H-600D.pdf _ween_psg2020.pdf
ACT102H-600D,118
Hersteller: WeEn Semiconductors
Category: Thyristors - others
Description: Thyristor: AC switch; 600V; Ifmax: 0.2A; Igt: 5mA; SO8; SMD
Type of thyristor: AC switch
Max. off-state voltage: 0.6kV
Max. load current: 0.2A
Gate current: 5mA
Case: SO8
Mounting: SMD
Features of semiconductor devices: internally triggered
Kind of package: reel; tape
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BT137X-600/DG,127 BT137X-600.pdf
BT137X-600/DG,127
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 8A; Igt: 35/70mA; TO220FP; tube; Ifsm: 65A; 4Q
Features of semiconductor devices: sensitive gate
Max. off-state voltage: 0.6kV
Max. load current: 8A
Kind of package: tube
Case: TO220FP
Typ of triac: standard
Mounting: THT
Max. forward impulse current: 65A
Gate current: 35/70mA
Technology: 4Q
Produkt ist nicht verfügbar
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BTA425Z-800BTQ BTA425Z-800BT.pdf
BTA425Z-800BTQ
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 25A; Igt: 50mA; SOT1292,TO3P; tube; Ifsm: 250A
Max. forward impulse current: 250A
Gate current: 50mA
Technology: 3Q; Hi-Com
Features of semiconductor devices: high temperature; sensitive gate
Max. off-state voltage: 0.8kV
Max. load current: 25A
Kind of package: tube
Case: SOT1292; TO3P
Typ of triac: standard
Mounting: THT
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BTA425Y-800BTQ _ween_psg2020.pdf
BTA425Y-800BTQ
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 25A; TO220AB; Igt: 50mA; Ifsm: 250A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 25A
Case: TO220AB
Gate current: 50mA
Max. forward impulse current: 250A
Technology: 3Q; Hi-Com
Features of semiconductor devices: high temperature; sensitive gate
Mounting: THT
Kind of package: tube
auf Bestellung 899 Stücke:
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BTA425X-800BTQ BTA425X-800BT.pdf
BTA425X-800BTQ
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 25A; TO220FP; Igt: 50mA; Ifsm: 250A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 25A
Case: TO220FP
Gate current: 50mA
Max. forward impulse current: 250A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
auf Bestellung 377 Stücke:
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BTA420X-800BT,127 BTA420X-800BT.pdf
BTA420X-800BT,127
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 20A; TO220FP; Igt: 50mA; Ifsm: 200A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 20A
Case: TO220FP
Gate current: 50mA
Max. forward impulse current: 200A
Technology: 3Q; Hi-Com
Features of semiconductor devices: high temperature; sensitive gate
Mounting: THT
Kind of package: tube
auf Bestellung 303 Stücke:
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BYC10-600,127 BYC10-600.pdf
BYC10-600,127
Hersteller: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10A; Ifsm: 65A; SOD59,TO220AC; tube
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 10A
Reverse recovery time: 19ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SOD59; TO220AC
Max. forward voltage: 1.4V
Max. forward impulse current: 65A
Kind of package: tube
auf Bestellung 227 Stücke:
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BTA420-800CT,127 BTA420-800CT.pdf
BTA420-800CT,127
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 20A; TO220AB; Igt: 35mA; Ifsm: 200A; 3Q,Hi-Com
Case: TO220AB
Mounting: THT
Kind of package: tube
Gate current: 35mA
Features of semiconductor devices: high temperature; sensitive gate
Type of thyristor: triac
Technology: 3Q; Hi-Com
Max. load current: 20A
Max. forward impulse current: 200A
Max. off-state voltage: 0.8kV
Produkt ist nicht verfügbar
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BTA420X-800CT,127 BTA420X-800CT.pdf
BTA420X-800CT,127
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 20A; TO220FP; Igt: 35mA; Ifsm: 200A; 3Q,Hi-Com
Case: TO220FP
Mounting: THT
Kind of package: tube
Gate current: 35mA
Features of semiconductor devices: high temperature; sensitive gate
Type of thyristor: triac
Technology: 3Q; Hi-Com
Max. load current: 20A
Max. forward impulse current: 200A
Max. off-state voltage: 0.8kV
Produkt ist nicht verfügbar
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BTA420-800BT,127 BTA420-800BT.pdf
BTA420-800BT,127
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 20A; TO220AB; Igt: 50mA; Ifsm: 200A; 3Q,Hi-Com
Case: TO220AB
Mounting: THT
Kind of package: tube
Gate current: 50mA
Features of semiconductor devices: high temperature; sensitive gate
Type of thyristor: triac
Technology: 3Q; Hi-Com
Max. load current: 20A
Max. forward impulse current: 200A
Max. off-state voltage: 0.8kV
Produkt ist nicht verfügbar
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BTA420X-800CT/L02Q BTA420X-800CT.pdf
BTA420X-800CT/L02Q
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 20A; TO220FP; Igt: 35mA; Ifsm: 200A; 3Q,Hi-Com
Case: TO220FP
Mounting: THT
Kind of package: tube
Gate current: 35mA
Features of semiconductor devices: high temperature; sensitive gate
Type of thyristor: triac
Technology: 3Q; Hi-Com
Max. load current: 20A
Max. forward impulse current: 200A
Max. off-state voltage: 0.8kV
Produkt ist nicht verfügbar
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BTA420Y-800BT,127 BTA420Y-800BT.pdf
BTA420Y-800BT,127
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 20A; TO220AB; Igt: 50mA; Ifsm: 220A; 3Q,Hi-Com
Case: TO220AB
Mounting: THT
Kind of package: tube
Gate current: 50mA
Features of semiconductor devices: high temperature; sensitive gate
Type of thyristor: triac
Technology: 3Q; Hi-Com
Max. load current: 20A
Max. forward impulse current: 220A
Max. off-state voltage: 0.8kV
Produkt ist nicht verfügbar
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BTA420Y-800CT,127 BTA420Y-800CT.pdf
BTA420Y-800CT,127
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 20A; TO220AB; Igt: 35mA; Ifsm: 200A; 3Q,Hi-Com
Case: TO220AB
Mounting: THT
Kind of package: tube
Gate current: 35mA
Features of semiconductor devices: high temperature; sensitive gate
Type of thyristor: triac
Technology: 3Q; Hi-Com
Max. load current: 20A
Max. forward impulse current: 200A
Max. off-state voltage: 0.8kV
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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MURS360BJ MURS360B.pdf _ween_psg2020.pdf
MURS360BJ
Hersteller: WeEn Semiconductors
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 3A; 50ns; SMB; Ufmax: 0.88V; Ifsm: 100A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 3A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SMB
Max. forward voltage: 0.88V
Max. forward impulse current: 100A
Kind of package: reel; tape
auf Bestellung 2125 Stücke:
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WSJM65R099DQ WSJM65R099DQ.pdf
WSJM65R099DQ
Hersteller: WeEn Semiconductors
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; Idm: 128A; 240W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Pulsed drain current: 128A
Power dissipation: 240W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 99mΩ
Mounting: THT
Gate charge: 57nC
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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WSJM65R099DTLJ WSJM65R099DTLJ.pdf
Hersteller: WeEn Semiconductors
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 16A; Idm: 100A; 147W; TOLL; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 16A
Pulsed drain current: 100A
Power dissipation: 147W
Case: TOLL
Gate-source voltage: ±30V
On-state resistance: 99mΩ
Mounting: SMD
Gate charge: 57nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
Mindestbestellmenge: 1800 Stücke
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BTA316X-800E,127 BTA316X-800E.PDF
BTA316X-800E,127
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 16A; Igt: 10mA; TO220FP; tube; Ifsm: 140A; 3Q,Hi-Com
Typ of triac: standard
Max. off-state voltage: 0.8kV
Max. load current: 16A
Gate current: 10mA
Case: TO220FP
Mounting: THT
Kind of package: tube
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
auf Bestellung 1879 Stücke:
Lieferzeit 14-21 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
BTA316B-800E,118 BTA316B-800E.pdf
BTA316B-800E,118
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 16A; Igt: 10mA; D2PAK; reel,tape; Ifsm: 140A; 3Q,Hi-Com
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 140A
Gate current: 10mA
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Max. off-state voltage: 0.8kV
Max. load current: 16A
Typ of triac: standard
auf Bestellung 357 Stücke:
Lieferzeit 14-21 Tag (e)
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BTA316B-600E,118 BTA316B-600E.pdf _ween_psg2020.pdf
BTA316B-600E,118
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 16A; Igt: 10mA; D2PAK; reel,tape; Ifsm: 140A; 3Q,Hi-Com
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 140A
Gate current: 10mA
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Max. off-state voltage: 0.6kV
Max. load current: 16A
Typ of triac: standard
auf Bestellung 741 Stücke:
Lieferzeit 14-21 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
BTA316-600C,127 BTA316-600C.pdf _ween_psg2020.pdf
BTA316-600C,127
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 16A; Igt: 35mA; TO220AB; tube; Ifsm: 140A; 3Q,Hi-Com
Case: TO220AB
Mounting: THT
Kind of package: tube
Max. forward impulse current: 140A
Gate current: 35mA
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Max. off-state voltage: 0.6kV
Max. load current: 16A
Typ of triac: standard
auf Bestellung 79 Stücke:
Lieferzeit 14-21 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
BTA316-600BT,127 BTA316-600BT.pdf _ween_psg2020.pdf
BTA316-600BT,127
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 16A; TO220AB; Igt: 50mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: TO220AB
Gate current: 50mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: high temperature; sensitive gate
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTA316-600E,127 BTA316-600E.pdf
BTA316-600E,127
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 16A; TO220AB; Igt: 10mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: TO220AB
Gate current: 10mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTA316X-800C,127 BTA316X-800C.pdf
BTA316X-800C,127
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 16A; TO220FP; Igt: 35mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: TO220FP
Gate current: 35mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTA316-800CTQ BTA316-800CT.pdf
BTA316-800CTQ
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 16A; Igt: 35mA; TO220AB; tube; Ifsm: 150A; 3Q,Hi-Com
Typ of triac: standard
Max. off-state voltage: 0.8kV
Max. load current: 16A
Gate current: 35mA
Case: TO220AB
Mounting: THT
Kind of package: tube
Max. forward impulse current: 150A
Technology: 3Q; Hi-Com
Features of semiconductor devices: high temperature
auf Bestellung 1740 Stücke:
Lieferzeit 14-21 Tag (e)
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BTA316-600ET/DGQ BTA316-600ET.pdf
BTA316-600ET/DGQ
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 16A; Igt: 10mA; TO220AB; tube; Ifsm: 140A; 3Q,Hi-Com
Case: TO220AB
Mounting: THT
Kind of package: tube
Max. forward impulse current: 140A
Gate current: 10mA
Technology: 3Q; Hi-Com
Features of semiconductor devices: high temperature; sensitive gate
Max. off-state voltage: 0.6kV
Max. load current: 16A
Typ of triac: standard
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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SMCJ58AJ SMCJ Series.pdf
SMCJ58AJ
Hersteller: WeEn Semiconductors
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 65÷70.6V; 16.1A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 58V
Breakdown voltage: 65...70.6V
Max. forward impulse current: 16.1A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMCJ
Produkt ist nicht verfügbar
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WNSC16650CWQ WNSC16650CWQ.pdf
WNSC16650CWQ
Hersteller: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8Ax2; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 1.7V
Max. forward impulse current: 48A
Kind of package: tube
Max. load current: 16A
Produkt ist nicht verfügbar
Mindestbestellmenge: 480 Stücke
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