Produkte > WEEN SEMICONDUCTORS > Alle Produkte des Herstellers WEEN SEMICONDUCTORS (5767) > Seite 97 nach 97
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
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BYC60W-1200PQ | WeEn Semiconductors |
 Category: THT universal diodesDescription: Diode: rectifying; THT; 1.2kV; 60A; tube; Ifsm: 550A; Ufmax: 3.3V Type of diode: rectifying Case: TO247AC Modified Mounting: THT Max. off-state voltage: 1.2kV Load current: 60A Semiconductor structure: single diode Max. forward voltage: 3.3V Max. forward impulse current: 0.55kA Kind of package: tube Reverse recovery time: 55ns |
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BYR5D-1200PJ | WeEn Semiconductors |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 1.2kV; 5A; DPAK; Ufmax: 1.55V; Ifsm: 55A Type of diode: rectifying Case: DPAK Mounting: SMD Max. off-state voltage: 1.2kV Load current: 5A Semiconductor structure: single diode Max. forward voltage: 1.55V Max. forward impulse current: 55A Kind of package: reel; tape Features of semiconductor devices: ultrafast switching |
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BTA425X-800BQ | WeEn Semiconductors |
Category: Triacs Description: Triac; 800V; 25A; TO220FP; Igt: 50mA; Ifsm: 250A; 3Q,Hi-Com Case: TO220FP Mounting: THT Kind of package: tube Gate current: 50mA Features of semiconductor devices: sensitive gate Type of thyristor: triac Technology: 3Q; Hi-Com Max. load current: 25A Max. forward impulse current: 250A Max. off-state voltage: 0.8kV |
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BTA425X-800BT/L02Q | WeEn Semiconductors |
Category: Triacs Description: Triac; 800V; 25A; TO220FP; Igt: 50mA; Ifsm: 275A; 3Q,Hi-Com Case: TO220FP Mounting: THT Kind of package: tube Gate current: 50mA Features of semiconductor devices: high temperature Type of thyristor: triac Technology: 3Q; Hi-Com Max. load current: 25A Max. forward impulse current: 275A Max. off-state voltage: 0.8kV |
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BTA425Y-800CTQ | WeEn Semiconductors |
Category: Triacs Description: Triac; 800V; 25A; TO220AB; Igt: 35mA; Ifsm: 250A; 3Q,Hi-Com Case: TO220AB Mounting: THT Kind of package: tube Gate current: 35mA Features of semiconductor devices: high temperature; sensitive gate Type of thyristor: triac Technology: 3Q; Hi-Com Max. load current: 25A Max. forward impulse current: 250A Max. off-state voltage: 0.8kV |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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BT139-800E.127 | WeEn Semiconductors |
Category: Triacs Description: Triac; 800V; 16A; TO220AB; Igt: 10/25mA; Ifsm: 155A; 4Q Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 16A Case: TO220AB Gate current: 10/25mA Max. forward impulse current: 155A Technology: 4Q Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
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| SMDJ30AJ | WeEn Semiconductors |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 3kW; 33.6÷36.59V; 62A; unidirectional; SMC; reel,tape Type of diode: TVS Semiconductor structure: unidirectional Mounting: SMD Kind of package: reel; tape Max. off-state voltage: 30V Breakdown voltage: 33.6...36.59V Max. forward impulse current: 62A Manufacturer series: SMDJ Peak pulse power dissipation: 3kW Case: SMC Leakage current: 1µA |
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| BYC60W-1200PQ |
|
Hersteller: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 60A; tube; Ifsm: 550A; Ufmax: 3.3V
Type of diode: rectifying
Case: TO247AC Modified
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 60A
Semiconductor structure: single diode
Max. forward voltage: 3.3V
Max. forward impulse current: 0.55kA
Kind of package: tube
Reverse recovery time: 55ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 60A; tube; Ifsm: 550A; Ufmax: 3.3V
Type of diode: rectifying
Case: TO247AC Modified
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 60A
Semiconductor structure: single diode
Max. forward voltage: 3.3V
Max. forward impulse current: 0.55kA
Kind of package: tube
Reverse recovery time: 55ns
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| BYR5D-1200PJ |
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Hersteller: WeEn Semiconductors
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 5A; DPAK; Ufmax: 1.55V; Ifsm: 55A
Type of diode: rectifying
Case: DPAK
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 5A
Semiconductor structure: single diode
Max. forward voltage: 1.55V
Max. forward impulse current: 55A
Kind of package: reel; tape
Features of semiconductor devices: ultrafast switching
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 5A; DPAK; Ufmax: 1.55V; Ifsm: 55A
Type of diode: rectifying
Case: DPAK
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 5A
Semiconductor structure: single diode
Max. forward voltage: 1.55V
Max. forward impulse current: 55A
Kind of package: reel; tape
Features of semiconductor devices: ultrafast switching
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| BTA425X-800BQ |
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Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 25A; TO220FP; Igt: 50mA; Ifsm: 250A; 3Q,Hi-Com
Case: TO220FP
Mounting: THT
Kind of package: tube
Gate current: 50mA
Features of semiconductor devices: sensitive gate
Type of thyristor: triac
Technology: 3Q; Hi-Com
Max. load current: 25A
Max. forward impulse current: 250A
Max. off-state voltage: 0.8kV
Category: Triacs
Description: Triac; 800V; 25A; TO220FP; Igt: 50mA; Ifsm: 250A; 3Q,Hi-Com
Case: TO220FP
Mounting: THT
Kind of package: tube
Gate current: 50mA
Features of semiconductor devices: sensitive gate
Type of thyristor: triac
Technology: 3Q; Hi-Com
Max. load current: 25A
Max. forward impulse current: 250A
Max. off-state voltage: 0.8kV
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| BTA425X-800BT/L02Q |
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Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 25A; TO220FP; Igt: 50mA; Ifsm: 275A; 3Q,Hi-Com
Case: TO220FP
Mounting: THT
Kind of package: tube
Gate current: 50mA
Features of semiconductor devices: high temperature
Type of thyristor: triac
Technology: 3Q; Hi-Com
Max. load current: 25A
Max. forward impulse current: 275A
Max. off-state voltage: 0.8kV
Category: Triacs
Description: Triac; 800V; 25A; TO220FP; Igt: 50mA; Ifsm: 275A; 3Q,Hi-Com
Case: TO220FP
Mounting: THT
Kind of package: tube
Gate current: 50mA
Features of semiconductor devices: high temperature
Type of thyristor: triac
Technology: 3Q; Hi-Com
Max. load current: 25A
Max. forward impulse current: 275A
Max. off-state voltage: 0.8kV
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| BTA425Y-800CTQ |
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Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 25A; TO220AB; Igt: 35mA; Ifsm: 250A; 3Q,Hi-Com
Case: TO220AB
Mounting: THT
Kind of package: tube
Gate current: 35mA
Features of semiconductor devices: high temperature; sensitive gate
Type of thyristor: triac
Technology: 3Q; Hi-Com
Max. load current: 25A
Max. forward impulse current: 250A
Max. off-state voltage: 0.8kV
Category: Triacs
Description: Triac; 800V; 25A; TO220AB; Igt: 35mA; Ifsm: 250A; 3Q,Hi-Com
Case: TO220AB
Mounting: THT
Kind of package: tube
Gate current: 35mA
Features of semiconductor devices: high temperature; sensitive gate
Type of thyristor: triac
Technology: 3Q; Hi-Com
Max. load current: 25A
Max. forward impulse current: 250A
Max. off-state voltage: 0.8kV
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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| BT139-800E.127 |
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Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 16A; TO220AB; Igt: 10/25mA; Ifsm: 155A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: TO220AB
Gate current: 10/25mA
Max. forward impulse current: 155A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 800V; 16A; TO220AB; Igt: 10/25mA; Ifsm: 155A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: TO220AB
Gate current: 10/25mA
Max. forward impulse current: 155A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
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| SMDJ30AJ |
|
Hersteller: WeEn Semiconductors
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 33.6÷36.59V; 62A; unidirectional; SMC; reel,tape
Type of diode: TVS
Semiconductor structure: unidirectional
Mounting: SMD
Kind of package: reel; tape
Max. off-state voltage: 30V
Breakdown voltage: 33.6...36.59V
Max. forward impulse current: 62A
Manufacturer series: SMDJ
Peak pulse power dissipation: 3kW
Case: SMC
Leakage current: 1µA
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 33.6÷36.59V; 62A; unidirectional; SMC; reel,tape
Type of diode: TVS
Semiconductor structure: unidirectional
Mounting: SMD
Kind of package: reel; tape
Max. off-state voltage: 30V
Breakdown voltage: 33.6...36.59V
Max. forward impulse current: 62A
Manufacturer series: SMDJ
Peak pulse power dissipation: 3kW
Case: SMC
Leakage current: 1µA
Produkt ist nicht verfügbar
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