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NXPLQSC20650W6Q NXPLQSC20650W6Q WeEn Semiconductors nxplqsc20650w.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 1.85V
Max. forward impulse current: 48A
Kind of package: tube
Max. load current: 20A
Produkt ist nicht verfügbar
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WNSC2D20650CJQ WNSC2D20650CJQ WeEn Semiconductors WNSC2D20650CJ%20%281%29.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; SOT1293,TO3PF
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: SOT1293; TO3PF
Max. forward voltage: 1.8V
Max. forward impulse current: 50A
Kind of package: tube
Max. load current: 20A
Produkt ist nicht verfügbar
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WNSC2D20650CWQ WNSC2D20650CWQ WeEn Semiconductors WNSC2D20650CW.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 1.8V
Max. forward impulse current: 50A
Kind of package: tube
Max. load current: 20A
Produkt ist nicht verfügbar
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WNSC6D20650WQ WNSC6D20650WQ WeEn Semiconductors WNSC6D20650W.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO247-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A
Semiconductor structure: single diode
Case: TO247-2
Max. forward voltage: 1.4V
Max. forward impulse current: 155A
Kind of package: tube
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WSJM65R099DQ WeEn Semiconductors WSJM65R099DQ.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; Idm: 128A; 240W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Pulsed drain current: 128A
Power dissipation: 240W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 99mΩ
Mounting: THT
Gate charge: 57nC
Kind of package: tube
Kind of channel: enhancement
Version: ESD
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WSJM65R099DTLJ WeEn Semiconductors WSJM65R099DTLJ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 16A; Idm: 100A; 147W; TOLL; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 16A
Pulsed drain current: 100A
Power dissipation: 147W
Case: TOLL
Gate-source voltage: ±30V
On-state resistance: 99mΩ
Mounting: SMD
Gate charge: 57nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
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BTA216-800B,127 BTA216-800B,127 WeEn Semiconductors BTA216-800B.pdf _ween_psg2020.pdf Category: Triacs
Description: Triac; 800V; 16A; TO220AB; Igt: 50mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: TO220AB
Gate current: 50mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
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84+0.86 EUR
95+0.76 EUR
105+0.68 EUR
500+0.63 EUR
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SMAJ18AJ WeEn Semiconductors SMAJ Series.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 20.19÷21.9V; 13.7A; unidirectional; SMA; SMAJ
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 18V
Breakdown voltage: 20.19...21.9V
Max. forward impulse current: 13.7A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMAJ
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ACT108W-600E,135 ACT108W-600E,135 WeEn Semiconductors ACT108W-600E.pdf _ween_psg2020.pdf Category: Thyristors - others
Description: Thyristor: AC switch; 600V; Ifmax: 0.8A; Igt: 10mA; SOT223; SMD
Type of thyristor: AC switch
Max. off-state voltage: 0.6kV
Max. load current: 0.8A
Gate current: 10mA
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: internally triggered
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266+0.27 EUR
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ACT108W-600D,135 ACT108W-600D,135 WeEn Semiconductors act108w-600d.pdf act108w-600d.pdf Category: Thyristors - others
Description: Thyristor: AC switch; 600V; Ifmax: 0.8A; Igt: 5mA; SOT223; SMD
Type of thyristor: AC switch
Max. off-state voltage: 0.6kV
Max. load current: 0.8A
Gate current: 5mA
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: internally triggered
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179+0.4 EUR
277+0.26 EUR
293+0.24 EUR
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MURS160BJ WeEn Semiconductors MURS160B.pdf _ween_psg2020.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 75ns; SMB; Ufmax: 1.25V; Ifsm: 35A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SMB
Max. forward voltage: 1.25V
Max. forward impulse current: 35A
Kind of package: reel; tape
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BYC15X-600PQ BYC15X-600PQ WeEn Semiconductors BYC15X-600P.pdf _ween_psg2020.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 15A; tube; Ifsm: 200A; Ufmax: 1.4V; 39ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 15A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 200A
Case: SOD113; TO220FP-2
Max. forward voltage: 1.4V
Reverse recovery time: 39ns
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94+0.77 EUR
107+0.67 EUR
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BYC15X-600,127 BYC15X-600,127 WeEn Semiconductors byc15x-600.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 15A; tube; Ifsm: 200A; Ufmax: 1.4V; 19ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 15A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Kind of package: tube
Max. forward impulse current: 200A
Case: SOD113; TO220FP-2
Max. forward voltage: 1.4V
Reverse recovery time: 19ns
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BYC15-1200PQ BYC15-1200PQ WeEn Semiconductors byc15-1200p.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 15A; tube; Ifsm: 180A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 15A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Kind of package: tube
Max. forward impulse current: 180A
Case: SOD59; TO220AC
Max. forward voltage: 2V
Reverse recovery time: 61ns
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BYC15M-650PQ WeEn Semiconductors BYC15M-650PQ.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 650V; 15A; tube; Ifsm: 180A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 650V
Load current: 15A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 180A
Case: SOD59; TO220AC
Max. forward voltage: 2.3V
Reverse recovery time: 14ns
Max. load current: 30A
Produkt ist nicht verfügbar
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BTA45-800BQ WeEn Semiconductors bta45-800b.pdf Category: Triacs
Description: Triac; 800V; 45A; SOT1292,TO3P; Igt: 50mA; Ifsm: 495A; 4Q
Case: SOT1292; TO3P
Mounting: THT
Kind of package: tube
Gate current: 50mA
Features of semiconductor devices: high temperature
Type of thyristor: triac
Technology: 4Q
Max. load current: 45A
Max. forward impulse current: 495A
Max. off-state voltage: 0.8kV
Produkt ist nicht verfügbar
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BYV32EB-200,118 BYV32EB-200,118 WeEn Semiconductors BYV32EB-200.pdf _ween_psg2020.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 10Ax2; 25ns; D2PAK,SOT404; Ifsm: 137A
Mounting: SMD
Reverse recovery time: 25ns
Max. forward voltage: 0.72V
Load current: 10A x2
Max. load current: 20A
Max. off-state voltage: 200V
Max. forward impulse current: 137A
Kind of package: reel; tape
Case: D2PAK; SOT404
Semiconductor structure: common cathode; double
Type of diode: rectifying
Features of semiconductor devices: ultrafast switching
auf Bestellung 732 Stücke:
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35+2.09 EUR
60+1.2 EUR
67+1.07 EUR
73+0.98 EUR
75+0.96 EUR
100+0.89 EUR
250+0.77 EUR
500+0.68 EUR
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BYV10MX-600PQ BYV10MX-600PQ WeEn Semiconductors BYV10MX-600P.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10A; tube; Ifsm: 100A; 35ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 10A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 100A
Case: SOD113; TO220FP-2
Reverse recovery time: 35ns
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BT145-800R,127 BT145-800R,127 WeEn Semiconductors bt145-800r.pdf Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 25A; 16A; Igt: 5mA; TO220AB; THT; tube; 2us
Type of thyristor: thyristor
Max. off-state voltage: 0.8kV
Max. load current: 25A
Load current: 16A
Gate current: 5mA
Case: TO220AB
Mounting: THT
Kind of package: tube
Max. forward impulse current: 0.3kA
Turn-on time: 2µs
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27+2.7 EUR
34+2.12 EUR
39+1.86 EUR
47+1.53 EUR
53+1.36 EUR
100+1.2 EUR
500+0.97 EUR
1000+0.9 EUR
2000+0.84 EUR
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BT139X-600F/DG,127 WeEn Semiconductors bt139x-600f.pdf Category: Triacs
Description: Triac; 600V; 16A; TO220FP; Igt: 25/70mA; Ifsm: 155A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: TO220FP
Gate current: 25/70mA
Max. forward impulse current: 155A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
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BYC30MW-650PT2Q WeEn Semiconductors BYC30MW-650PT2.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 650V; 30A; tube; Ifsm: 270A; TO247-2; 20ns
Kind of package: tube
Features of semiconductor devices: ultrafast switching
Reverse recovery time: 20ns
Max. forward voltage: 1.8V
Load current: 30A
Max. load current: 60A
Max. forward impulse current: 270A
Max. off-state voltage: 650V
Type of diode: rectifying
Semiconductor structure: single diode
Mounting: THT
Case: TO247-2
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BYC80MW-650PT2Q WeEn Semiconductors BYC80MW-650PT2Q.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 650V; 80A; tube; Ifsm: 600A; TO247-2; 120ns
Kind of package: tube
Features of semiconductor devices: ultrafast switching
Reverse recovery time: 120ns
Max. forward voltage: 1.9V
Load current: 80A
Max. load current: 160A
Max. forward impulse current: 0.6kA
Max. off-state voltage: 650V
Type of diode: rectifying
Semiconductor structure: single diode
Mounting: THT
Case: TO247-2
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BUJ100LR,412 BUJ100LR,412 WeEn Semiconductors Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 400V; 1A; 2.1W; TO92
Mounting: THT
Kind of package: bulk
Type of transistor: NPN
Collector current: 1A
Power dissipation: 2.1W
Current gain: 5...20
Collector-emitter voltage: 400V
Polarisation: bipolar
Case: TO92
auf Bestellung 4094 Stücke:
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278+0.26 EUR
360+0.2 EUR
444+0.16 EUR
571+0.13 EUR
776+0.092 EUR
1000+0.083 EUR
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BTA312-800CT,127 BTA312-800CT,127 WeEn Semiconductors bta312-800ct.pdf Category: Triacs
Description: Triac; 800V; 12A; TO220AB; Igt: 35mA; Ifsm: 100A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 12A
Case: TO220AB
Gate current: 35mA
Max. forward impulse current: 100A
Technology: 3Q; Hi-Com
Features of semiconductor devices: high temperature; sensitive gate
Mounting: THT
Kind of package: tube
auf Bestellung 1783 Stücke:
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80+0.9 EUR
92+0.78 EUR
104+0.69 EUR
116+0.62 EUR
121+0.59 EUR
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P6SMAL75AX WeEn Semiconductors P6SMAL.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 83.3÷92.1V; 5A; unidirectional; SMA flat; P6SMAL
Type of diode: TVS
Mounting: SMD
Max. off-state voltage: 75V
Semiconductor structure: unidirectional
Case: SMA flat
Max. forward impulse current: 5A
Leakage current: 1µA
Kind of package: reel; tape
Breakdown voltage: 83.3...92.1V
Peak pulse power dissipation: 0.6kW
Manufacturer series: P6SMAL
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P6SMAL36AX WeEn Semiconductors P6SMAL.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 40÷44.2V; 10.4A; unidirectional; SMA flat; P6SMAL
Type of diode: TVS
Mounting: SMD
Max. off-state voltage: 36V
Semiconductor structure: unidirectional
Case: SMA flat
Max. forward impulse current: 10.4A
Leakage current: 1µA
Kind of package: reel; tape
Breakdown voltage: 40...44.2V
Peak pulse power dissipation: 0.6kW
Manufacturer series: P6SMAL
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BT168GW,115 BT168GW,115 WeEn Semiconductors BT168GW.pdf _ween_psg2020.pdf Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 1A; 0.63A; Igt: 50uA; SOT223; SMD; reel,tape
Mounting: SMD
Case: SOT223
Kind of package: reel; tape
Load current: 0.63A
Max. load current: 1A
Max. forward impulse current: 8A
Type of thyristor: thyristor
Max. off-state voltage: 0.6kV
Turn-on time: 2µs
Gate current: 50µA
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143+0.5 EUR
197+0.36 EUR
231+0.31 EUR
336+0.21 EUR
500+0.16 EUR
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BT168G,112 BT168G,112 WeEn Semiconductors bt168g.pdf Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 0.8A; 0.5A; Igt: 50uA; TO92; THT; bulk; 2us
Mounting: THT
Case: TO92
Kind of package: bulk
Load current: 0.5A
Max. load current: 0.8A
Max. forward impulse current: 8A
Type of thyristor: thyristor
Max. off-state voltage: 0.6kV
Turn-on time: 2µs
Gate current: 50µA
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200+0.36 EUR
315+0.23 EUR
385+0.19 EUR
477+0.15 EUR
618+0.12 EUR
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BT168GWF,115 BT168GWF,115 WeEn Semiconductors bt168gwf.pdf Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 1A; 0.63A; Igt: 450uA; SOT223; SMD; reel,tape
Mounting: SMD
Case: SOT223
Kind of package: reel; tape
Load current: 0.63A
Max. load current: 1A
Max. forward impulse current: 9A
Type of thyristor: thyristor
Max. off-state voltage: 0.6kV
Gate current: 450µA
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136+0.53 EUR
217+0.33 EUR
230+0.31 EUR
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BT168E,112 BT168E,112 WeEn Semiconductors bt168e.pdf Category: SMD/THT thyristors
Description: Thyristor; 500V; Ifmax: 0.8A; 0.5A; Igt: 50uA; TO92; THT; bulk; 2us
Mounting: THT
Case: TO92
Kind of package: bulk
Load current: 0.5A
Max. load current: 0.8A
Max. forward impulse current: 8A
Type of thyristor: thyristor
Max. off-state voltage: 500V
Turn-on time: 2µs
Gate current: 50µA
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BT168GW,135 WeEn Semiconductors bt168gw.pdf Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 1A; 0.63A; Igt: 50uA; SOT223; SMD; reel,tape
Mounting: SMD
Case: SOT223
Kind of package: reel; tape
Load current: 0.63A
Max. load current: 1A
Max. forward impulse current: 8A
Type of thyristor: thyristor
Max. off-state voltage: 0.6kV
Turn-on time: 2µs
Gate current: 50µA
Produkt ist nicht verfügbar
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BYV29-600,127 BYV29-600,127 WeEn Semiconductors BYV29-600%2C127.pdf BYV29600.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 9A; tube; Ifsm: 77A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 9A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 77A
Case: SOD59; TO220AC
Max. forward voltage: 1.45V
Reverse recovery time: 60ns
auf Bestellung 913 Stücke:
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88+0.82 EUR
128+0.56 EUR
141+0.51 EUR
500+0.4 EUR
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NXPLQSC106506Q NXPLQSC106506Q WeEn Semiconductors nxplqsc10650.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220AC; tube
Case: TO220AC
Mounting: THT
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Semiconductor structure: single diode
Max. forward voltage: 1.85V
Load current: 10A
Max. forward impulse current: 48A
Max. off-state voltage: 650V
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BYV42E-150,127 BYV42E-150,127 WeEn Semiconductors byv42e-200.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 150V; 15Ax2; tube; Ifsm: 150A; SOT78,TO220AB
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 150V
Load current: 15A x2
Reverse recovery time: 28ns
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Case: SOT78; TO220AB
Max. forward voltage: 0.78V
Max. load current: 30A
Max. forward impulse current: 150A
Kind of package: tube
Heatsink thickness: max. 1.3mm
auf Bestellung 341 Stücke:
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48+1.5 EUR
61+1.18 EUR
68+1.06 EUR
73+0.98 EUR
100+0.9 EUR
250+0.81 EUR
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BYV42EB-200,118 BYV42EB-200,118 WeEn Semiconductors byv42e-200.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 15Ax2; 28ns; D2PAK,SOT404; Ifsm: 160A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 15A x2
Reverse recovery time: 28ns
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Case: D2PAK; SOT404
Max. forward voltage: 0.85V
Max. load current: 30A
Max. forward impulse current: 160A
Kind of package: reel; tape
Produkt ist nicht verfügbar
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MUR560J MUR560J WeEn Semiconductors MUR560.pdf _ween_psg2020.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 5A; 45ns; SMC; Ufmax: 1.35V; Ifsm: 130A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 5A
Reverse recovery time: 45ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SMC
Max. forward voltage: 1.35V
Max. forward impulse current: 130A
Kind of package: reel; tape
auf Bestellung 94 Stücke:
Lieferzeit 14-21 Tag (e)
94+0.76 EUR
Mindestbestellmenge: 94
Im Einkaufswagen  Stück im Wert von  UAH
NXPLQSC20650W6Q nxplqsc20650w.pdf
NXPLQSC20650W6Q
Hersteller: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 1.85V
Max. forward impulse current: 48A
Kind of package: tube
Max. load current: 20A
Produkt ist nicht verfügbar
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WNSC2D20650CJQ WNSC2D20650CJ%20%281%29.pdf
WNSC2D20650CJQ
Hersteller: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; SOT1293,TO3PF
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: SOT1293; TO3PF
Max. forward voltage: 1.8V
Max. forward impulse current: 50A
Kind of package: tube
Max. load current: 20A
Produkt ist nicht verfügbar
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WNSC2D20650CWQ WNSC2D20650CW.pdf
WNSC2D20650CWQ
Hersteller: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 1.8V
Max. forward impulse current: 50A
Kind of package: tube
Max. load current: 20A
Produkt ist nicht verfügbar
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WNSC6D20650WQ WNSC6D20650W.pdf
WNSC6D20650WQ
Hersteller: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO247-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A
Semiconductor structure: single diode
Case: TO247-2
Max. forward voltage: 1.4V
Max. forward impulse current: 155A
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WSJM65R099DQ WSJM65R099DQ.pdf
Hersteller: WeEn Semiconductors
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; Idm: 128A; 240W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Pulsed drain current: 128A
Power dissipation: 240W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 99mΩ
Mounting: THT
Gate charge: 57nC
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WSJM65R099DTLJ WSJM65R099DTLJ.pdf
Hersteller: WeEn Semiconductors
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 16A; Idm: 100A; 147W; TOLL; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 16A
Pulsed drain current: 100A
Power dissipation: 147W
Case: TOLL
Gate-source voltage: ±30V
On-state resistance: 99mΩ
Mounting: SMD
Gate charge: 57nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
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BTA216-800B,127 BTA216-800B.pdf _ween_psg2020.pdf
BTA216-800B,127
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 16A; TO220AB; Igt: 50mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: TO220AB
Gate current: 50mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
auf Bestellung 669 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
71+1.02 EUR
84+0.86 EUR
95+0.76 EUR
105+0.68 EUR
500+0.63 EUR
Mindestbestellmenge: 71
Im Einkaufswagen  Stück im Wert von  UAH
SMAJ18AJ SMAJ Series.pdf
Hersteller: WeEn Semiconductors
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 20.19÷21.9V; 13.7A; unidirectional; SMA; SMAJ
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 18V
Breakdown voltage: 20.19...21.9V
Max. forward impulse current: 13.7A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMAJ
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
ACT108W-600E,135 ACT108W-600E.pdf _ween_psg2020.pdf
ACT108W-600E,135
Hersteller: WeEn Semiconductors
Category: Thyristors - others
Description: Thyristor: AC switch; 600V; Ifmax: 0.8A; Igt: 10mA; SOT223; SMD
Type of thyristor: AC switch
Max. off-state voltage: 0.6kV
Max. load current: 0.8A
Gate current: 10mA
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: internally triggered
auf Bestellung 2422 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
167+0.43 EUR
266+0.27 EUR
319+0.22 EUR
Mindestbestellmenge: 167
Im Einkaufswagen  Stück im Wert von  UAH
ACT108W-600D,135 act108w-600d.pdf act108w-600d.pdf
ACT108W-600D,135
Hersteller: WeEn Semiconductors
Category: Thyristors - others
Description: Thyristor: AC switch; 600V; Ifmax: 0.8A; Igt: 5mA; SOT223; SMD
Type of thyristor: AC switch
Max. off-state voltage: 0.6kV
Max. load current: 0.8A
Gate current: 5mA
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: internally triggered
auf Bestellung 3805 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
112+0.64 EUR
179+0.4 EUR
277+0.26 EUR
293+0.24 EUR
500+0.22 EUR
Mindestbestellmenge: 112
Im Einkaufswagen  Stück im Wert von  UAH
MURS160BJ MURS160B.pdf _ween_psg2020.pdf
Hersteller: WeEn Semiconductors
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 75ns; SMB; Ufmax: 1.25V; Ifsm: 35A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SMB
Max. forward voltage: 1.25V
Max. forward impulse current: 35A
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BYC15X-600PQ BYC15X-600P.pdf _ween_psg2020.pdf
BYC15X-600PQ
Hersteller: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 15A; tube; Ifsm: 200A; Ufmax: 1.4V; 39ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 15A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 200A
Case: SOD113; TO220FP-2
Max. forward voltage: 1.4V
Reverse recovery time: 39ns
auf Bestellung 974 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
77+0.93 EUR
94+0.77 EUR
107+0.67 EUR
117+0.61 EUR
Mindestbestellmenge: 77
Im Einkaufswagen  Stück im Wert von  UAH
BYC15X-600,127 byc15x-600.pdf
BYC15X-600,127
Hersteller: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 15A; tube; Ifsm: 200A; Ufmax: 1.4V; 19ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 15A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Kind of package: tube
Max. forward impulse current: 200A
Case: SOD113; TO220FP-2
Max. forward voltage: 1.4V
Reverse recovery time: 19ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BYC15-1200PQ byc15-1200p.pdf
BYC15-1200PQ
Hersteller: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 15A; tube; Ifsm: 180A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 15A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Kind of package: tube
Max. forward impulse current: 180A
Case: SOD59; TO220AC
Max. forward voltage: 2V
Reverse recovery time: 61ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BYC15M-650PQ BYC15M-650PQ.pdf
Hersteller: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 650V; 15A; tube; Ifsm: 180A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 650V
Load current: 15A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 180A
Case: SOD59; TO220AC
Max. forward voltage: 2.3V
Reverse recovery time: 14ns
Max. load current: 30A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTA45-800BQ bta45-800b.pdf
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 45A; SOT1292,TO3P; Igt: 50mA; Ifsm: 495A; 4Q
Case: SOT1292; TO3P
Mounting: THT
Kind of package: tube
Gate current: 50mA
Features of semiconductor devices: high temperature
Type of thyristor: triac
Technology: 4Q
Max. load current: 45A
Max. forward impulse current: 495A
Max. off-state voltage: 0.8kV
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BYV32EB-200,118 BYV32EB-200.pdf _ween_psg2020.pdf
BYV32EB-200,118
Hersteller: WeEn Semiconductors
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 10Ax2; 25ns; D2PAK,SOT404; Ifsm: 137A
Mounting: SMD
Reverse recovery time: 25ns
Max. forward voltage: 0.72V
Load current: 10A x2
Max. load current: 20A
Max. off-state voltage: 200V
Max. forward impulse current: 137A
Kind of package: reel; tape
Case: D2PAK; SOT404
Semiconductor structure: common cathode; double
Type of diode: rectifying
Features of semiconductor devices: ultrafast switching
auf Bestellung 732 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
35+2.09 EUR
60+1.2 EUR
67+1.07 EUR
73+0.98 EUR
75+0.96 EUR
100+0.89 EUR
250+0.77 EUR
500+0.68 EUR
Mindestbestellmenge: 35
Im Einkaufswagen  Stück im Wert von  UAH
BYV10MX-600PQ BYV10MX-600P.pdf
BYV10MX-600PQ
Hersteller: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10A; tube; Ifsm: 100A; 35ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 10A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 100A
Case: SOD113; TO220FP-2
Reverse recovery time: 35ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BT145-800R,127 bt145-800r.pdf
BT145-800R,127
Hersteller: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 25A; 16A; Igt: 5mA; TO220AB; THT; tube; 2us
Type of thyristor: thyristor
Max. off-state voltage: 0.8kV
Max. load current: 25A
Load current: 16A
Gate current: 5mA
Case: TO220AB
Mounting: THT
Kind of package: tube
Max. forward impulse current: 0.3kA
Turn-on time: 2µs
auf Bestellung 4364 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
27+2.7 EUR
34+2.12 EUR
39+1.86 EUR
47+1.53 EUR
53+1.36 EUR
100+1.2 EUR
500+0.97 EUR
1000+0.9 EUR
2000+0.84 EUR
Mindestbestellmenge: 27
Im Einkaufswagen  Stück im Wert von  UAH
BT139X-600F/DG,127 bt139x-600f.pdf
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 16A; TO220FP; Igt: 25/70mA; Ifsm: 155A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: TO220FP
Gate current: 25/70mA
Max. forward impulse current: 155A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
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BYC30MW-650PT2Q BYC30MW-650PT2.pdf
Hersteller: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 650V; 30A; tube; Ifsm: 270A; TO247-2; 20ns
Kind of package: tube
Features of semiconductor devices: ultrafast switching
Reverse recovery time: 20ns
Max. forward voltage: 1.8V
Load current: 30A
Max. load current: 60A
Max. forward impulse current: 270A
Max. off-state voltage: 650V
Type of diode: rectifying
Semiconductor structure: single diode
Mounting: THT
Case: TO247-2
Produkt ist nicht verfügbar
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BYC80MW-650PT2Q BYC80MW-650PT2Q.pdf
Hersteller: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 650V; 80A; tube; Ifsm: 600A; TO247-2; 120ns
Kind of package: tube
Features of semiconductor devices: ultrafast switching
Reverse recovery time: 120ns
Max. forward voltage: 1.9V
Load current: 80A
Max. load current: 160A
Max. forward impulse current: 0.6kA
Max. off-state voltage: 650V
Type of diode: rectifying
Semiconductor structure: single diode
Mounting: THT
Case: TO247-2
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BUJ100LR,412
BUJ100LR,412
Hersteller: WeEn Semiconductors
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 400V; 1A; 2.1W; TO92
Mounting: THT
Kind of package: bulk
Type of transistor: NPN
Collector current: 1A
Power dissipation: 2.1W
Current gain: 5...20
Collector-emitter voltage: 400V
Polarisation: bipolar
Case: TO92
auf Bestellung 4094 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
278+0.26 EUR
360+0.2 EUR
444+0.16 EUR
571+0.13 EUR
776+0.092 EUR
1000+0.083 EUR
Mindestbestellmenge: 278
Im Einkaufswagen  Stück im Wert von  UAH
BTA312-800CT,127 bta312-800ct.pdf
BTA312-800CT,127
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 12A; TO220AB; Igt: 35mA; Ifsm: 100A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 12A
Case: TO220AB
Gate current: 35mA
Max. forward impulse current: 100A
Technology: 3Q; Hi-Com
Features of semiconductor devices: high temperature; sensitive gate
Mounting: THT
Kind of package: tube
auf Bestellung 1783 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
80+0.9 EUR
92+0.78 EUR
104+0.69 EUR
116+0.62 EUR
121+0.59 EUR
Mindestbestellmenge: 80
Im Einkaufswagen  Stück im Wert von  UAH
P6SMAL75AX P6SMAL.pdf
Hersteller: WeEn Semiconductors
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 83.3÷92.1V; 5A; unidirectional; SMA flat; P6SMAL
Type of diode: TVS
Mounting: SMD
Max. off-state voltage: 75V
Semiconductor structure: unidirectional
Case: SMA flat
Max. forward impulse current: 5A
Leakage current: 1µA
Kind of package: reel; tape
Breakdown voltage: 83.3...92.1V
Peak pulse power dissipation: 0.6kW
Manufacturer series: P6SMAL
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
P6SMAL36AX P6SMAL.pdf
Hersteller: WeEn Semiconductors
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 40÷44.2V; 10.4A; unidirectional; SMA flat; P6SMAL
Type of diode: TVS
Mounting: SMD
Max. off-state voltage: 36V
Semiconductor structure: unidirectional
Case: SMA flat
Max. forward impulse current: 10.4A
Leakage current: 1µA
Kind of package: reel; tape
Breakdown voltage: 40...44.2V
Peak pulse power dissipation: 0.6kW
Manufacturer series: P6SMAL
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BT168GW,115 BT168GW.pdf _ween_psg2020.pdf
BT168GW,115
Hersteller: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 1A; 0.63A; Igt: 50uA; SOT223; SMD; reel,tape
Mounting: SMD
Case: SOT223
Kind of package: reel; tape
Load current: 0.63A
Max. load current: 1A
Max. forward impulse current: 8A
Type of thyristor: thyristor
Max. off-state voltage: 0.6kV
Turn-on time: 2µs
Gate current: 50µA
auf Bestellung 865 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
143+0.5 EUR
197+0.36 EUR
231+0.31 EUR
336+0.21 EUR
500+0.16 EUR
Mindestbestellmenge: 143
Im Einkaufswagen  Stück im Wert von  UAH
BT168G,112 bt168g.pdf
BT168G,112
Hersteller: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 0.8A; 0.5A; Igt: 50uA; TO92; THT; bulk; 2us
Mounting: THT
Case: TO92
Kind of package: bulk
Load current: 0.5A
Max. load current: 0.8A
Max. forward impulse current: 8A
Type of thyristor: thyristor
Max. off-state voltage: 0.6kV
Turn-on time: 2µs
Gate current: 50µA
auf Bestellung 815 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
200+0.36 EUR
315+0.23 EUR
385+0.19 EUR
477+0.15 EUR
618+0.12 EUR
Mindestbestellmenge: 200
Im Einkaufswagen  Stück im Wert von  UAH
BT168GWF,115 bt168gwf.pdf
BT168GWF,115
Hersteller: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 1A; 0.63A; Igt: 450uA; SOT223; SMD; reel,tape
Mounting: SMD
Case: SOT223
Kind of package: reel; tape
Load current: 0.63A
Max. load current: 1A
Max. forward impulse current: 9A
Type of thyristor: thyristor
Max. off-state voltage: 0.6kV
Gate current: 450µA
auf Bestellung 230 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
136+0.53 EUR
217+0.33 EUR
230+0.31 EUR
Mindestbestellmenge: 136
Im Einkaufswagen  Stück im Wert von  UAH
BT168E,112 bt168e.pdf
BT168E,112
Hersteller: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 500V; Ifmax: 0.8A; 0.5A; Igt: 50uA; TO92; THT; bulk; 2us
Mounting: THT
Case: TO92
Kind of package: bulk
Load current: 0.5A
Max. load current: 0.8A
Max. forward impulse current: 8A
Type of thyristor: thyristor
Max. off-state voltage: 500V
Turn-on time: 2µs
Gate current: 50µA
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BT168GW,135 bt168gw.pdf
Hersteller: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 1A; 0.63A; Igt: 50uA; SOT223; SMD; reel,tape
Mounting: SMD
Case: SOT223
Kind of package: reel; tape
Load current: 0.63A
Max. load current: 1A
Max. forward impulse current: 8A
Type of thyristor: thyristor
Max. off-state voltage: 0.6kV
Turn-on time: 2µs
Gate current: 50µA
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BYV29-600,127 BYV29-600%2C127.pdf BYV29600.pdf
BYV29-600,127
Hersteller: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 9A; tube; Ifsm: 77A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 9A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 77A
Case: SOD59; TO220AC
Max. forward voltage: 1.45V
Reverse recovery time: 60ns
auf Bestellung 913 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
88+0.82 EUR
128+0.56 EUR
141+0.51 EUR
500+0.4 EUR
Mindestbestellmenge: 88
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NXPLQSC106506Q nxplqsc10650.pdf
NXPLQSC106506Q
Hersteller: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220AC; tube
Case: TO220AC
Mounting: THT
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Semiconductor structure: single diode
Max. forward voltage: 1.85V
Load current: 10A
Max. forward impulse current: 48A
Max. off-state voltage: 650V
Produkt ist nicht verfügbar
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BYV42E-150,127 byv42e-200.pdf
BYV42E-150,127
Hersteller: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 150V; 15Ax2; tube; Ifsm: 150A; SOT78,TO220AB
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 150V
Load current: 15A x2
Reverse recovery time: 28ns
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Case: SOT78; TO220AB
Max. forward voltage: 0.78V
Max. load current: 30A
Max. forward impulse current: 150A
Kind of package: tube
Heatsink thickness: max. 1.3mm
auf Bestellung 341 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
48+1.5 EUR
61+1.18 EUR
68+1.06 EUR
73+0.98 EUR
100+0.9 EUR
250+0.81 EUR
Mindestbestellmenge: 48
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BYV42EB-200,118 byv42e-200.pdf
BYV42EB-200,118
Hersteller: WeEn Semiconductors
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 15Ax2; 28ns; D2PAK,SOT404; Ifsm: 160A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 15A x2
Reverse recovery time: 28ns
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Case: D2PAK; SOT404
Max. forward voltage: 0.85V
Max. load current: 30A
Max. forward impulse current: 160A
Kind of package: reel; tape
Produkt ist nicht verfügbar
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MUR560J MUR560.pdf _ween_psg2020.pdf
MUR560J
Hersteller: WeEn Semiconductors
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 5A; 45ns; SMC; Ufmax: 1.35V; Ifsm: 130A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 5A
Reverse recovery time: 45ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SMC
Max. forward voltage: 1.35V
Max. forward impulse current: 130A
Kind of package: reel; tape
auf Bestellung 94 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
94+0.76 EUR
Mindestbestellmenge: 94
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