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5.0SMDJ43CAJ WeEn Semiconductors 5.0SMDJ.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 5kW; 47.8÷52.8V; 72.1A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 5kW
Max. off-state voltage: 43V
Breakdown voltage: 47.8...52.8V
Max. forward impulse current: 72.1A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: 5.0SMDJ
Produkt ist nicht verfügbar
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ESDHD03UFX WeEn Semiconductors ESDHDxxUF%20Series.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 4÷8V; 24A; unidirectional; DFN1006-2; reel,tape
Mounting: SMD
Kind of package: reel; tape
Type of diode: TVS
Semiconductor structure: unidirectional
Leakage current: 1µA
Number of channels: 1
Max. off-state voltage: 3.3V
Breakdown voltage: 4...8V
Max. forward impulse current: 24A
Manufacturer series: HD
Case: DFN1006-2
Version: ESD
Produkt ist nicht verfügbar
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ESDHD05UFX WeEn Semiconductors ESDHD05UF.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 320W; 6÷9.5V; 20A; unidirectional; DFN1006-2; Ch: 1
Mounting: SMD
Kind of package: reel; tape
Type of diode: TVS
Semiconductor structure: unidirectional
Leakage current: 0.1µA
Number of channels: 1
Max. off-state voltage: 5V
Breakdown voltage: 6...9.5V
Max. forward impulse current: 20A
Manufacturer series: HD
Peak pulse power dissipation: 320W
Case: DFN1006-2
Version: ESD
Produkt ist nicht verfügbar
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ESDALD05BCX ESDALD05BCX WeEn Semiconductors ESDALDxxBC.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 6.5V; 15A; 350W; bidirectional; ESD; SOD323; Ch: 1
Peak pulse power dissipation: 0.35kW
Case: SOD323
Version: ESD
Manufacturer series: LD
Kind of package: reel; tape
Mounting: SMD
Type of diode: TVS array
Leakage current: 1µA
Number of channels: 1
Max. forward impulse current: 15A
Max. off-state voltage: 5V
Breakdown voltage: 6.5V
Semiconductor structure: bidirectional
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ESDALD05UD4X ESDALD05UD4X WeEn Semiconductors ESDALD05UD4.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; 5.5A; 88W; unidirectional; ESD; SOT23-6; Ch: 4
Application: USB
Peak pulse power dissipation: 88W
Case: SOT23-6
Version: ESD
Manufacturer series: LD
Kind of package: reel; tape
Mounting: SMD
Type of diode: TVS array
Leakage current: 0.1µA
Number of channels: 4
Max. forward impulse current: 5.5A
Max. off-state voltage: 5V
Breakdown voltage: 6V
Semiconductor structure: unidirectional
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ESDALD05UJ2X WeEn Semiconductors ESDALD05UJ2.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; 8A; 136W; unidirectional; ESD; SOT143; Ch: 2; LD
Application: USB
Peak pulse power dissipation: 136W
Case: SOT143
Version: ESD
Manufacturer series: LD
Kind of package: reel; tape
Mounting: SMD
Type of diode: TVS array
Leakage current: 0.1µA
Number of channels: 2
Max. forward impulse current: 8A
Max. off-state voltage: 5V
Breakdown voltage: 6V
Semiconductor structure: unidirectional
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BUJ100,412 BUJ100,412 WeEn Semiconductors Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 400V; 1A; 2W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 400V
Collector current: 1A
Power dissipation: 2W
Case: TO92
Current gain: 9...20
Mounting: THT
Kind of package: bulk
Produkt ist nicht verfügbar
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WNSCM80120R6Q WeEn Semiconductors WNSCM80120R6Q.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 32A; Idm: 81A; 270W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 32A
Pulsed drain current: 81A
Power dissipation: 270W
Case: TO247-4
Gate-source voltage: -10...25V
On-state resistance: 0.11Ω
Mounting: THT
Gate charge: 59nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
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BYR29-800,127 BYR29-800,127 WeEn Semiconductors Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 8A; tube; Ifsm: 66A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.8kV
Load current: 8A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 66A
Case: SOD59; TO220AC
Max. forward voltage: 1.95V
Reverse recovery time: 75ns
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134+0.63 EUR
148+0.58 EUR
168+0.51 EUR
500+0.46 EUR
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BYC10DX-600,127 BYC10DX-600,127 WeEn Semiconductors BYC10DX-600.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10A; tube; Ifsm: 65A; SOD113,TO220FP-2
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 10A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Kind of package: tube
Max. forward impulse current: 65A
Case: SOD113; TO220FP-2
Max. forward voltage: 1.4V
Reverse recovery time: 18ns
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85+1 EUR
139+0.61 EUR
151+0.57 EUR
500+0.56 EUR
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BYC10B-600,118 BYC10B-600,118 WeEn Semiconductors BYC10B-600.pdf _ween_psg2020.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 10A; 55ns; D2PAK,SOT404; Ufmax: 1.4V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 10A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: reel; tape
Max. forward impulse current: 71A
Case: D2PAK; SOT404
Max. forward voltage: 1.4V
Reverse recovery time: 55ns
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BYC10X-600PQ BYC10X-600PQ WeEn Semiconductors byc10x-600p.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10A; tube; Ifsm: 150A; Ufmax: 1.3V; 19ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 10A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Kind of package: tube
Max. forward impulse current: 150A
Case: SOD113; TO220FP-2
Max. forward voltage: 1.3V
Reverse recovery time: 19ns
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BYC10-600PQ BYC10-600PQ WeEn Semiconductors BYC10-600P.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10A; tube; Ifsm: 150A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 10A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 150A
Case: SOD59; TO220AC
Max. forward voltage: 2V
Reverse recovery time: 18ns
Max. load current: 20A
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BYC10-600CT,127 BYC10-600CT,127 WeEn Semiconductors BYC10-600CT.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 5Ax2; tube; Ifsm: 40A; SOT78,TO220AB
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 5A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: superfast switching
Kind of package: tube
Max. forward impulse current: 40A
Case: SOT78; TO220AB
Max. forward voltage: 1.4V
Reverse recovery time: 19ns
Heatsink thickness: 1.25...1.4mm
Max. load current: 10A
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BYC10D-600,127 BYC10D-600,127 WeEn Semiconductors BYC10D-600.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10A; tube; Ifsm: 65A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 10A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Kind of package: tube
Max. forward impulse current: 65A
Case: SOD59; TO220AC
Max. forward voltage: 1.4V
Reverse recovery time: 18ns
Produkt ist nicht verfügbar
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BYC10X-600,127 BYC10X-600,127 WeEn Semiconductors Discrete%20Selection%20Guide%202011.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10A; tube; Ifsm: 91A; SOD113,TO220FP-2
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 10A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Kind of package: tube
Max. forward impulse current: 91A
Case: SOD113; TO220FP-2
Max. forward voltage: 1.4V
Reverse recovery time: 19ns
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BYC75W-1200PQ BYC75W-1200PQ WeEn Semiconductors byc75w-1200p.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 75A; tube; Ifsm: 660A; Ufmax: 3.3V
Type of diode: rectifying
Case: TO247AC Modified
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 75A
Semiconductor structure: single diode
Max. forward voltage: 3.3V
Max. forward impulse current: 660A
Kind of package: tube
Reverse recovery time: 85ns
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BYC15-1200PQ BYC15-1200PQ WeEn Semiconductors BYC15-1200P.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 15A; tube; Ifsm: 180A; SOD59,TO220AC
Type of diode: rectifying
Case: SOD59; TO220AC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 15A
Semiconductor structure: single diode
Max. forward voltage: 2V
Max. forward impulse current: 180A
Kind of package: tube
Reverse recovery time: 61ns
Features of semiconductor devices: superfast switching
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BYC40W-1200PQ BYC40W-1200PQ WeEn Semiconductors BYC40W-1200P.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 40A; tube; Ifsm: 300A; TO247-2; 91ns
Type of diode: rectifying
Case: TO247-2
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 40A
Semiconductor structure: single diode
Max. forward voltage: 2.2V
Max. forward impulse current: 0.3kA
Kind of package: tube
Reverse recovery time: 91ns
Features of semiconductor devices: superfast switching
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BYC60W-1200PQ BYC60W-1200PQ WeEn Semiconductors BYC60W-1200P.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 60A; tube; Ifsm: 550A; Ufmax: 3.3V
Type of diode: rectifying
Case: TO247AC Modified
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 60A
Semiconductor structure: single diode
Max. forward voltage: 3.3V
Max. forward impulse current: 0.55kA
Kind of package: tube
Reverse recovery time: 55ns
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BYR5D-1200PJ BYR5D-1200PJ WeEn Semiconductors byr5d-1200p.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 5A; DPAK; Ufmax: 1.55V; Ifsm: 55A
Type of diode: rectifying
Case: DPAK
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 5A
Semiconductor structure: single diode
Max. forward voltage: 1.55V
Max. forward impulse current: 55A
Kind of package: reel; tape
Features of semiconductor devices: ultrafast switching
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BTA425X-800BQ BTA425X-800BQ WeEn Semiconductors BTA425X-800B.pdf Category: Triacs
Description: Triac; 800V; 25A; TO220FP; Igt: 50mA; Ifsm: 250A; 3Q,Hi-Com
Case: TO220FP
Mounting: THT
Kind of package: tube
Gate current: 50mA
Features of semiconductor devices: sensitive gate
Type of thyristor: triac
Technology: 3Q; Hi-Com
Max. load current: 25A
Max. forward impulse current: 250A
Max. off-state voltage: 0.8kV
Produkt ist nicht verfügbar
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BTA425X-800BT/L02Q BTA425X-800BT/L02Q WeEn Semiconductors BTA425X-800BT.pdf Category: Triacs
Description: Triac; 800V; 25A; TO220FP; Igt: 50mA; Ifsm: 275A; 3Q,Hi-Com
Case: TO220FP
Mounting: THT
Kind of package: tube
Gate current: 50mA
Features of semiconductor devices: high temperature
Type of thyristor: triac
Technology: 3Q; Hi-Com
Max. load current: 25A
Max. forward impulse current: 275A
Max. off-state voltage: 0.8kV
Produkt ist nicht verfügbar
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BTA425Y-800CTQ BTA425Y-800CTQ WeEn Semiconductors BTA425Y-800CT.pdf Category: Triacs
Description: Triac; 800V; 25A; TO220AB; Igt: 35mA; Ifsm: 250A; 3Q,Hi-Com
Case: TO220AB
Mounting: THT
Kind of package: tube
Gate current: 35mA
Features of semiconductor devices: high temperature; sensitive gate
Type of thyristor: triac
Technology: 3Q; Hi-Com
Max. load current: 25A
Max. forward impulse current: 250A
Max. off-state voltage: 0.8kV
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BT139-800E.127 BT139-800E.127 WeEn Semiconductors BT139-800E.pdf _ween_psg2020.pdf Category: Triacs
Description: Triac; 800V; 16A; TO220AB; Igt: 10/25mA; Ifsm: 155A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: TO220AB
Gate current: 10/25mA
Max. forward impulse current: 155A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
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SMDJ30AJ WeEn Semiconductors SMDJ Series.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 33.6÷36.59V; 62A; unidirectional; SMC; reel,tape
Type of diode: TVS
Semiconductor structure: unidirectional
Mounting: SMD
Kind of package: reel; tape
Max. off-state voltage: 30V
Breakdown voltage: 33.6...36.59V
Max. forward impulse current: 62A
Manufacturer series: SMDJ
Peak pulse power dissipation: 3kW
Case: SMC
Leakage current: 1µA
Produkt ist nicht verfügbar
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5.0SMDJ43CAJ 5.0SMDJ.pdf
Hersteller: WeEn Semiconductors
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 5kW; 47.8÷52.8V; 72.1A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 5kW
Max. off-state voltage: 43V
Breakdown voltage: 47.8...52.8V
Max. forward impulse current: 72.1A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: 5.0SMDJ
Produkt ist nicht verfügbar
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ESDHD03UFX ESDHDxxUF%20Series.pdf
Hersteller: WeEn Semiconductors
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 4÷8V; 24A; unidirectional; DFN1006-2; reel,tape
Mounting: SMD
Kind of package: reel; tape
Type of diode: TVS
Semiconductor structure: unidirectional
Leakage current: 1µA
Number of channels: 1
Max. off-state voltage: 3.3V
Breakdown voltage: 4...8V
Max. forward impulse current: 24A
Manufacturer series: HD
Case: DFN1006-2
Version: ESD
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ESDHD05UFX ESDHD05UF.pdf
Hersteller: WeEn Semiconductors
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 320W; 6÷9.5V; 20A; unidirectional; DFN1006-2; Ch: 1
Mounting: SMD
Kind of package: reel; tape
Type of diode: TVS
Semiconductor structure: unidirectional
Leakage current: 0.1µA
Number of channels: 1
Max. off-state voltage: 5V
Breakdown voltage: 6...9.5V
Max. forward impulse current: 20A
Manufacturer series: HD
Peak pulse power dissipation: 320W
Case: DFN1006-2
Version: ESD
Produkt ist nicht verfügbar
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ESDALD05BCX ESDALDxxBC.pdf
Hersteller: WeEn Semiconductors
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.5V; 15A; 350W; bidirectional; ESD; SOD323; Ch: 1
Peak pulse power dissipation: 0.35kW
Case: SOD323
Version: ESD
Manufacturer series: LD
Kind of package: reel; tape
Mounting: SMD
Type of diode: TVS array
Leakage current: 1µA
Number of channels: 1
Max. forward impulse current: 15A
Max. off-state voltage: 5V
Breakdown voltage: 6.5V
Semiconductor structure: bidirectional
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ESDALD05UD4X ESDALD05UD4.pdf
Hersteller: WeEn Semiconductors
Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; 5.5A; 88W; unidirectional; ESD; SOT23-6; Ch: 4
Application: USB
Peak pulse power dissipation: 88W
Case: SOT23-6
Version: ESD
Manufacturer series: LD
Kind of package: reel; tape
Mounting: SMD
Type of diode: TVS array
Leakage current: 0.1µA
Number of channels: 4
Max. forward impulse current: 5.5A
Max. off-state voltage: 5V
Breakdown voltage: 6V
Semiconductor structure: unidirectional
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ESDALD05UJ2X ESDALD05UJ2.pdf
Hersteller: WeEn Semiconductors
Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; 8A; 136W; unidirectional; ESD; SOT143; Ch: 2; LD
Application: USB
Peak pulse power dissipation: 136W
Case: SOT143
Version: ESD
Manufacturer series: LD
Kind of package: reel; tape
Mounting: SMD
Type of diode: TVS array
Leakage current: 0.1µA
Number of channels: 2
Max. forward impulse current: 8A
Max. off-state voltage: 5V
Breakdown voltage: 6V
Semiconductor structure: unidirectional
Produkt ist nicht verfügbar
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BUJ100,412
Hersteller: WeEn Semiconductors
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 400V; 1A; 2W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 400V
Collector current: 1A
Power dissipation: 2W
Case: TO92
Current gain: 9...20
Mounting: THT
Kind of package: bulk
Produkt ist nicht verfügbar
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WNSCM80120R6Q WNSCM80120R6Q.pdf
Hersteller: WeEn Semiconductors
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 32A; Idm: 81A; 270W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 32A
Pulsed drain current: 81A
Power dissipation: 270W
Case: TO247-4
Gate-source voltage: -10...25V
On-state resistance: 0.11Ω
Mounting: THT
Gate charge: 59nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
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BYR29-800,127
Hersteller: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 8A; tube; Ifsm: 66A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.8kV
Load current: 8A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 66A
Case: SOD59; TO220AC
Max. forward voltage: 1.95V
Reverse recovery time: 75ns
auf Bestellung 540 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
80+1.07 EUR
134+0.63 EUR
148+0.58 EUR
168+0.51 EUR
500+0.46 EUR
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BYC10DX-600,127 BYC10DX-600.pdf
Hersteller: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10A; tube; Ifsm: 65A; SOD113,TO220FP-2
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 10A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Kind of package: tube
Max. forward impulse current: 65A
Case: SOD113; TO220FP-2
Max. forward voltage: 1.4V
Reverse recovery time: 18ns
auf Bestellung 925 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
85+1 EUR
139+0.61 EUR
151+0.57 EUR
500+0.56 EUR
Mindestbestellmenge: 85 Stücke
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BYC10B-600,118 BYC10B-600.pdf _ween_psg2020.pdf
Hersteller: WeEn Semiconductors
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 10A; 55ns; D2PAK,SOT404; Ufmax: 1.4V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 10A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: reel; tape
Max. forward impulse current: 71A
Case: D2PAK; SOT404
Max. forward voltage: 1.4V
Reverse recovery time: 55ns
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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BYC10X-600PQ byc10x-600p.pdf
Hersteller: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10A; tube; Ifsm: 150A; Ufmax: 1.3V; 19ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 10A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Kind of package: tube
Max. forward impulse current: 150A
Case: SOD113; TO220FP-2
Max. forward voltage: 1.3V
Reverse recovery time: 19ns
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BYC10-600PQ BYC10-600P.pdf
Hersteller: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10A; tube; Ifsm: 150A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 10A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 150A
Case: SOD59; TO220AC
Max. forward voltage: 2V
Reverse recovery time: 18ns
Max. load current: 20A
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BYC10-600CT,127 BYC10-600CT.pdf
Hersteller: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 5Ax2; tube; Ifsm: 40A; SOT78,TO220AB
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 5A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: superfast switching
Kind of package: tube
Max. forward impulse current: 40A
Case: SOT78; TO220AB
Max. forward voltage: 1.4V
Reverse recovery time: 19ns
Heatsink thickness: 1.25...1.4mm
Max. load current: 10A
Produkt ist nicht verfügbar
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BYC10D-600,127 BYC10D-600.pdf
Hersteller: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10A; tube; Ifsm: 65A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 10A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Kind of package: tube
Max. forward impulse current: 65A
Case: SOD59; TO220AC
Max. forward voltage: 1.4V
Reverse recovery time: 18ns
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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BYC10X-600,127 Discrete%20Selection%20Guide%202011.pdf
Hersteller: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10A; tube; Ifsm: 91A; SOD113,TO220FP-2
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 10A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Kind of package: tube
Max. forward impulse current: 91A
Case: SOD113; TO220FP-2
Max. forward voltage: 1.4V
Reverse recovery time: 19ns
Produkt ist nicht verfügbar
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BYC75W-1200PQ byc75w-1200p.pdf
Hersteller: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 75A; tube; Ifsm: 660A; Ufmax: 3.3V
Type of diode: rectifying
Case: TO247AC Modified
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 75A
Semiconductor structure: single diode
Max. forward voltage: 3.3V
Max. forward impulse current: 660A
Kind of package: tube
Reverse recovery time: 85ns
Produkt ist nicht verfügbar
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BYC15-1200PQ BYC15-1200P.pdf
Hersteller: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 15A; tube; Ifsm: 180A; SOD59,TO220AC
Type of diode: rectifying
Case: SOD59; TO220AC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 15A
Semiconductor structure: single diode
Max. forward voltage: 2V
Max. forward impulse current: 180A
Kind of package: tube
Reverse recovery time: 61ns
Features of semiconductor devices: superfast switching
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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BYC40W-1200PQ BYC40W-1200P.pdf
Hersteller: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 40A; tube; Ifsm: 300A; TO247-2; 91ns
Type of diode: rectifying
Case: TO247-2
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 40A
Semiconductor structure: single diode
Max. forward voltage: 2.2V
Max. forward impulse current: 0.3kA
Kind of package: tube
Reverse recovery time: 91ns
Features of semiconductor devices: superfast switching
Produkt ist nicht verfügbar
Mindestbestellmenge: 900 Stücke
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BYC60W-1200PQ BYC60W-1200P.pdf
Hersteller: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 60A; tube; Ifsm: 550A; Ufmax: 3.3V
Type of diode: rectifying
Case: TO247AC Modified
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 60A
Semiconductor structure: single diode
Max. forward voltage: 3.3V
Max. forward impulse current: 0.55kA
Kind of package: tube
Reverse recovery time: 55ns
Produkt ist nicht verfügbar
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BYR5D-1200PJ byr5d-1200p.pdf
Hersteller: WeEn Semiconductors
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 5A; DPAK; Ufmax: 1.55V; Ifsm: 55A
Type of diode: rectifying
Case: DPAK
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 5A
Semiconductor structure: single diode
Max. forward voltage: 1.55V
Max. forward impulse current: 55A
Kind of package: reel; tape
Features of semiconductor devices: ultrafast switching
Produkt ist nicht verfügbar
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BTA425X-800BQ BTA425X-800B.pdf
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 25A; TO220FP; Igt: 50mA; Ifsm: 250A; 3Q,Hi-Com
Case: TO220FP
Mounting: THT
Kind of package: tube
Gate current: 50mA
Features of semiconductor devices: sensitive gate
Type of thyristor: triac
Technology: 3Q; Hi-Com
Max. load current: 25A
Max. forward impulse current: 250A
Max. off-state voltage: 0.8kV
Produkt ist nicht verfügbar
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BTA425X-800BT/L02Q BTA425X-800BT.pdf
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 25A; TO220FP; Igt: 50mA; Ifsm: 275A; 3Q,Hi-Com
Case: TO220FP
Mounting: THT
Kind of package: tube
Gate current: 50mA
Features of semiconductor devices: high temperature
Type of thyristor: triac
Technology: 3Q; Hi-Com
Max. load current: 25A
Max. forward impulse current: 275A
Max. off-state voltage: 0.8kV
Produkt ist nicht verfügbar
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BTA425Y-800CTQ BTA425Y-800CT.pdf
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 25A; TO220AB; Igt: 35mA; Ifsm: 250A; 3Q,Hi-Com
Case: TO220AB
Mounting: THT
Kind of package: tube
Gate current: 35mA
Features of semiconductor devices: high temperature; sensitive gate
Type of thyristor: triac
Technology: 3Q; Hi-Com
Max. load current: 25A
Max. forward impulse current: 250A
Max. off-state voltage: 0.8kV
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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BT139-800E.127 BT139-800E.pdf _ween_psg2020.pdf
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 16A; TO220AB; Igt: 10/25mA; Ifsm: 155A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: TO220AB
Gate current: 10/25mA
Max. forward impulse current: 155A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
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SMDJ30AJ SMDJ Series.pdf
Hersteller: WeEn Semiconductors
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 33.6÷36.59V; 62A; unidirectional; SMC; reel,tape
Type of diode: TVS
Semiconductor structure: unidirectional
Mounting: SMD
Kind of package: reel; tape
Max. off-state voltage: 30V
Breakdown voltage: 33.6...36.59V
Max. forward impulse current: 62A
Manufacturer series: SMDJ
Peak pulse power dissipation: 3kW
Case: SMC
Leakage current: 1µA
Produkt ist nicht verfügbar
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