Produkte > WEEN SEMICONDUCTORS > Alle Produkte des Herstellers WEEN SEMICONDUCTORS (5928) > Seite 97 nach 99

Wählen Sie Seite:   [  << Vorherige Seite ]  1 9 18 27 36 45 54 63 72 81 90 92 93 94 95 96 97 98 99  [ Nächste Seite >> ]
Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Privatkunde
BYC5D-500,127 BYC5D-500,127 WeEn Semiconductors PHGLS23037-1.pdf?t.download=true&u=5oefqw Category: THT universal diodes
Description: Diode: rectifying; THT; 500V; 5A; tube; Ifsm: 44A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 500V
Load current: 5A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 44A
Case: SOD59; TO220AC
Max. forward voltage: 1.45V
Reverse recovery time: 16ns
auf Bestellung 847 Stücke:
Lieferzeit 14-21 Tag (e)
93+0.92 EUR
110+0.77 EUR
136+0.63 EUR
250+0.57 EUR
500+0.54 EUR
Mindestbestellmenge: 93 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BT151X-500C,127 BT151X-500C,127 WeEn Semiconductors BT151X-500C-127.pdf BT151X-500C.pdf Category: SMD/THT thyristors
Description: Thyristor; 500V; Ifmax: 12A; 7.5A; Igt: 2mA; TO220FP; THT; tube; 2us
Type of thyristor: thyristor
Max. off-state voltage: 500V
Max. load current: 12A
Load current: 7.5A
Gate current: 2mA
Case: TO220FP
Mounting: THT
Kind of package: tube
Max. forward impulse current: 100A
Turn-on time: 2µs
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BYV72EW-200,127 BYV72EW-200,127 WeEn Semiconductors byv72ew-200.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 15Ax2; tube; Ifsm: 185A; TO247-3; 28ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 15A x2
Semiconductor structure: common cathode; double
Kind of package: tube
Max. forward impulse current: 185A
Case: TO247-3
Max. forward voltage: 1.2V
Max. load current: 30A
Reverse recovery time: 28ns
auf Bestellung 1789 Stücke:
Lieferzeit 14-21 Tag (e)
36+2.37 EUR
63+1.36 EUR
Mindestbestellmenge: 36 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BTA316X-800C/L03Q BTA316X-800C/L03Q WeEn Semiconductors BTA316X-800C.pdf Category: Triacs
Description: Triac; 800V; 16A; TO220FP; Igt: 35mA; Ifsm: 150A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: TO220FP
Gate current: 35mA
Max. forward impulse current: 150A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
ESDALD05UE2X ESDALD05UE2X WeEn Semiconductors ESDALD05UE2.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; 4A; 60W; unidirectional; ESD; SOT23-3; Ch: 2; LD
Application: HDMI; USB
Peak pulse power dissipation: 60W
Case: SOT23-3
Version: ESD
Manufacturer series: LD
Kind of package: reel; tape
Mounting: SMD
Type of diode: TVS array
Leakage current: 0.1µA
Number of channels: 2
Max. forward impulse current: 4A
Max. off-state voltage: 5V
Breakdown voltage: 6V
Semiconductor structure: unidirectional
Produkt ist nicht verfügbar
 Mindestbestellmenge: 90000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
ESDALD05UG4X WeEn Semiconductors ESDALD05UG4.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; 4A; 60W; unidirectional; ESD; DFN2510; Ch: 4; LD
Application: HDMI; USB
Peak pulse power dissipation: 60W
Case: DFN2510
Version: ESD
Manufacturer series: LD
Kind of package: reel; tape
Mounting: SMD
Type of diode: TVS array
Leakage current: 0.1µA
Number of channels: 4
Max. forward impulse current: 4A
Max. off-state voltage: 5V
Breakdown voltage: 6V
Semiconductor structure: unidirectional
Produkt ist nicht verfügbar
 Mindestbestellmenge: 90000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BTA140-800.127 BTA140-800.127 WeEn Semiconductors BTA140-800.pdf _ween_psg2020.pdf Category: Triacs
Description: Triac; 800V; 25A; TO220AB; Igt: 35/70mA; Ifsm: 190A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 25A
Case: TO220AB
Gate current: 35/70mA
Max. forward impulse current: 190A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WNC3060D45160WQ WNC3060D45160WQ WeEn Semiconductors _ween_psg2020.pdf WNC3060D45160WQ.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 270A; TO247-3; 29ns
Semiconductor structure: common cathode; double
Mounting: THT
Type of diode: rectifying
Case: TO247-3
Reverse recovery time: 29ns
Max. forward voltage: 1.38V
Load current: 30A
Max. forward impulse current: 270A
Max. off-state voltage: 0.6kV
Kind of package: tube
Features of semiconductor devices: bypass diode; ultrafast switching
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WNSC2M40120B76J WeEn Semiconductors WNSC2M40120B76J.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 61A; Idm: 170A; 500W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 61A
Pulsed drain current: 170A
Power dissipation: 500W
Case: TO263-7
Gate-source voltage: -4...18V
On-state resistance: 56mΩ
Mounting: SMD
Gate charge: 115nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Produkt ist nicht verfügbar
 Mindestbestellmenge: 800 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BYQ28X-200,127 BYQ28X-200,127 WeEn Semiconductors byq28x-200.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 5Ax2; tube; Ifsm: 55A; Ufmax: 1.25V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 5A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 55A
Case: SOD113; TO220FP-2
Max. forward voltage: 1.25V
Max. load current: 10A
Reverse recovery time: 25ns
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BT136X-800,127 BT136X-800,127 WeEn Semiconductors BT136X-800.pdf Category: Triacs
Description: Triac; 800V; 4A; TO220FP; Igt: 35/70mA; Ifsm: 25A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 4A
Case: TO220FP
Gate current: 35/70mA
Max. forward impulse current: 25A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BUJ302AD,118 BUJ302AD,118 WeEn Semiconductors BUJ302AD.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 400V; 4A; 80W; DPAK
Mounting: SMD
Type of transistor: NPN
Kind of package: reel; tape
Collector current: 4A
Current gain: 25...50
Power dissipation: 80W
Collector-emitter voltage: 400V
Polarisation: bipolar
Case: DPAK
auf Bestellung 314 Stücke:
Lieferzeit 14-21 Tag (e)
72+1.19 EUR
91+0.94 EUR
103+0.83 EUR
129+0.67 EUR
Mindestbestellmenge: 72 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BUJ302A,127 BUJ302A,127 WeEn Semiconductors PHGLS22628-1.pdf?t.download=true&u=5oefqw Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 400V; 4A; 80W; TO220AB
Mounting: THT
Type of transistor: NPN
Kind of package: tube
Collector current: 4A
Current gain: 25...50
Power dissipation: 80W
Collector-emitter voltage: 400V
Polarisation: bipolar
Case: TO220AB
auf Bestellung 134 Stücke:
Lieferzeit 14-21 Tag (e)
85+1 EUR
117+0.73 EUR
134+0.63 EUR
Mindestbestellmenge: 85 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BUJ302AX,127 BUJ302AX,127 WeEn Semiconductors buj302ax.pdf Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 400V; 4A; 26W; TO220FP
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 400V
Collector current: 4A
Power dissipation: 26W
Case: TO220FP
Current gain: 25...50
Mounting: THT
Kind of package: tube
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
85+1 EUR
117+0.73 EUR
145+0.6 EUR
161+0.54 EUR
182+0.46 EUR
Mindestbestellmenge: 85 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
WND35P08XQ WeEn Semiconductors WND35P08XQ.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 35A; tube; Ifsm: 400A; Ufmax: 1.35V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.8kV
Load current: 35A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 0.4kA
Case: SOD113; TO220FP-2
Max. forward voltage: 1.35V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SMDJ40AJ WeEn Semiconductors SMDJ Series.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 44.8÷48.8V; 46.5A; unidirectional; SMC; reel,tape
Type of diode: TVS
Max. off-state voltage: 40V
Semiconductor structure: unidirectional
Mounting: SMD
Kind of package: reel; tape
Leakage current: 1µA
Case: SMC
Breakdown voltage: 44.8...48.8V
Manufacturer series: SMDJ
Max. forward impulse current: 46.5A
Peak pulse power dissipation: 3kW
Produkt ist nicht verfügbar
 Mindestbestellmenge: 6000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BTA316-800ET,127 BTA316-800ET,127 WeEn Semiconductors BTA316-800ET.pdf _ween_psg2020.pdf Category: Triacs
Description: Triac; 800V; 16A; TO220AB; Igt: 10mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: TO220AB
Gate current: 10mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: high temperature; sensitive gate
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
OT412,115 OT412,115 WeEn Semiconductors Category: Triacs
Description: Triac; 1A; SOT223; 4Q; sensitive gate
Type of thyristor: triac
Max. load current: 1A
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: sensitive gate
Technology: 4Q
auf Bestellung 776 Stücke:
Lieferzeit 14-21 Tag (e)
260+0.33 EUR
317+0.27 EUR
360+0.24 EUR
374+0.23 EUR
Mindestbestellmenge: 260 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
WMSC016H12B1P6T WeEn Semiconductors WMSC016H12B1P6T.pdf Category: Transistor modules
Description: Module; transistor/transistor; 1.2kV; 85A; Press-in PCB; Idm: 170A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 85A
Topology: MOSFET half-bridge; NTC thermistor
Electrical mounting: Press-in PCB
On-state resistance: 16mΩ
Pulsed drain current: 170A
Power dissipation: 146W
Technology: SiC
Gate-source voltage: -4...18V
Mechanical mounting: screw
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMSC030H12B1P6T WeEn Semiconductors WMSC030H12B1P6T.pdf Category: Transistor modules
Description: Module; transistor/transistor; 1.2kV; 53A; Press-in PCB; Idm: 100A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 53A
Topology: MOSFET half-bridge; NTC thermistor
Electrical mounting: Press-in PCB
On-state resistance: 30mΩ
Pulsed drain current: 100A
Power dissipation: 111W
Technology: SiC
Gate-source voltage: -4...18V
Mechanical mounting: screw
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMSC020H12B1P6T WeEn Semiconductors WMSC020H12B1P6T.pdf Category: Transistor modules
Description: Module; transistor/transistor; 1.2kV; 70A; Press-in PCB; Idm: 140A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 70A
Topology: MOSFET half-bridge; NTC thermistor
Electrical mounting: Press-in PCB
On-state resistance: 20mΩ
Pulsed drain current: 140A
Power dissipation: 118W
Technology: SiC
Gate-source voltage: -4...18V
Mechanical mounting: screw
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMSC040H12B1P6T WeEn Semiconductors WMSC040H12B1P6T.pdf Category: Transistor modules
Description: Module; transistor/transistor; 1.2kV; 45A; Press-in PCB; Idm: 90A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 45A
Topology: MOSFET half-bridge; NTC thermistor
Electrical mounting: Press-in PCB
On-state resistance: 40mΩ
Pulsed drain current: 90A
Power dissipation: 105W
Technology: SiC
Gate-source voltage: -4...18V
Mechanical mounting: screw
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMSC010H12B1P6T WeEn Semiconductors WMSC010H12B1P6T.pdf Category: Transistor modules
Description: Module; transistor/transistor; 1.2kV; 107A; Press-in PCB; 152W
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 107A
Topology: MOSFET half-bridge; NTC thermistor
Electrical mounting: Press-in PCB
On-state resistance: 10mΩ
Pulsed drain current: 210A
Power dissipation: 152W
Technology: SiC
Gate-source voltage: -4...18V
Mechanical mounting: screw
Produkt ist nicht verfügbar
 Mindestbestellmenge: 16 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BTA312-600B,127 BTA312-600B,127 WeEn Semiconductors BTA312-600B.pdf Category: Triacs
Description: Triac; 600V; 12A; TO220AB; Igt: 50mA; Ifsm: 100A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: TO220AB
Gate current: 50mA
Max. forward impulse current: 100A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
ESDALD03BCX ESDALD03BCX WeEn Semiconductors ESDALDxxBC.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 4.5V; 20A; 350W; bidirectional; ESD; SOD323; Ch: 1
Mounting: SMD
Case: SOD323
Kind of package: reel; tape
Breakdown voltage: 4.5V
Manufacturer series: LD
Max. forward impulse current: 20A
Peak pulse power dissipation: 0.35kW
Version: ESD
Max. off-state voltage: 3.3V
Semiconductor structure: bidirectional
Leakage current: 1µA
Type of diode: TVS array
Number of channels: 1
Produkt ist nicht verfügbar
 Mindestbestellmenge: 90000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NCR100W-10MX NCR100W-10MX WeEn Semiconductors NCR100W-10M.pdf Category: SMD/THT thyristors
Description: Thyristor; 850V; Ifmax: 1.1A; 0.8A; Igt: 100uA; SOT223; SMD; Ifsm: 11A
Type of thyristor: thyristor
Max. off-state voltage: 850V
Max. load current: 1.1A
Load current: 0.8A
Gate current: 100µA
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 11A
Turn-on time: 2µs
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTA208X-1000C0,127 BTA208X-1000C0,127 WeEn Semiconductors BTA208X-1000C0.pdf Category: Triacs
Description: Triac; 1kV; 8A; TO220FP; Igt: 35mA; Ifsm: 71A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 1kV
Max. load current: 8A
Case: TO220FP
Gate current: 35mA
Max. forward impulse current: 71A
Technology: 3Q; Hi-Com
Features of semiconductor devices: high commutation
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTA208X-1000C0/L01 BTA208X-1000C0/L01 WeEn Semiconductors BTA208X-1000C0.pdf Category: Triacs
Description: Triac; 1kV; 8A; TO220FP; Igt: 35mA; Ifsm: 71A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 1kV
Max. load current: 8A
Case: TO220FP
Gate current: 35mA
Max. forward impulse current: 71A
Technology: 3Q; Hi-Com
Features of semiconductor devices: high commutation
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BYV430W-300PQ BYV430W-300PQ WeEn Semiconductors Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 15Ax2; tube; Ifsm: 330A; TO247-3; 50ns
Case: TO247-3
Mounting: THT
Kind of package: tube
Type of diode: rectifying
Reverse recovery time: 50ns
Max. forward voltage: 1V
Load current: 15A x2
Max. load current: 30A
Max. forward impulse current: 330A
Max. off-state voltage: 300V
Semiconductor structure: common cathode; double
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BYV430W-600PQ BYV430W-600PQ WeEn Semiconductors BYV430W-600P.pdf _ween_psg2020.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30Ax2; tube; Ifsm: 180A; TO247-3; 90ns
Case: TO247-3
Mounting: THT
Kind of package: tube
Features of semiconductor devices: ultrafast switching
Type of diode: rectifying
Reverse recovery time: 90ns
Max. forward voltage: 2V
Load current: 30A x2
Max. load current: 60A
Max. forward impulse current: 180A
Max. off-state voltage: 0.6kV
Semiconductor structure: common cathode; double
Produkt ist nicht verfügbar
 Mindestbestellmenge: 600 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
WNS20S100CBJ WNS20S100CBJ WeEn Semiconductors WNS20S100CB.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 100V; 10Ax2; reel,tape
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.8V
Max. load current: 20A
Max. forward impulse current: 120A
Kind of package: reel; tape
auf Bestellung 22 Stücke:
Lieferzeit 14-21 Tag (e)
22+3.87 EUR
Mindestbestellmenge: 22 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BYC5-600,127 BYC5-600,127 WeEn Semiconductors BYC5-600.pdf _ween_psg2020.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 5A; tube; Ifsm: 44A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 5A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 44A
Case: SOD59; TO220AC
Max. forward voltage: 1.4V
Reverse recovery time: 50ns
Heatsink thickness: 1.27...1.39mm
auf Bestellung 703 Stücke:
Lieferzeit 14-21 Tag (e)
125+0.68 EUR
149+0.57 EUR
165+0.51 EUR
174+0.49 EUR
Mindestbestellmenge: 125 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BYC5X-600PQ BYC5X-600PQ WeEn Semiconductors BYC5X-600P.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 5A; tube; Ifsm: 60A; SOD113,TO220FP-2
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 5A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 60A
Case: SOD113; TO220FP-2
Max. forward voltage: 2.1V
Max. load current: 10A
Reverse recovery time: 11ns
auf Bestellung 35 Stücke:
Lieferzeit 14-21 Tag (e)
35+2.43 EUR
Mindestbestellmenge: 35 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BYC5-1200PQ BYC5-1200PQ WeEn Semiconductors BYC5-1200P.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 5A; tube; Ifsm: 55A; SOD59,TO220AC
Type of diode: rectifying
Case: SOD59; TO220AC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 5A
Semiconductor structure: single diode
Max. forward impulse current: 55A
Kind of package: tube
Reverse recovery time: 42ns
Features of semiconductor devices: superfast switching
Produkt ist nicht verfügbar
 Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BYC5B-600,118 BYC5B-600,118 WeEn Semiconductors BYC5B-600.pdf PHGLS23444-1.pdf?t.download=true&u=5oefqw Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 5A; 30ns; D2PAK,SOT404; Ufmax: 2.2V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 5A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 44A
Case: D2PAK; SOT404
Max. forward voltage: 2.2V
Reverse recovery time: 30ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BYC5DX-500,127 BYC5DX-500,127 WeEn Semiconductors BYC5DX-500.pdf PHGLS23038-1.pdf?t.download=true&u=5oefqw Category: THT universal diodes
Description: Diode: rectifying; THT; 500V; 5A; tube; Ifsm: 40A; SOD113,TO220FP-2
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 500V
Load current: 5A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Kind of package: tube
Max. forward impulse current: 40A
Case: SOD113; TO220FP-2
Max. forward voltage: 1.15V
Reverse recovery time: 16ns
Produkt ist nicht verfügbar
 Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BYC5X-600,127 BYC5X-600,127 WeEn Semiconductors BYC5X-600.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 5A; tube; Ifsm: 44A; SOD113,TO220FP-2
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 5A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 44A
Case: SOD113; TO220FP-2
Max. forward voltage: 2.2V
Reverse recovery time: 30ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BT258U-600R,127 BT258U-600R,127 WeEn Semiconductors BT258U-600R.pdf Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 8A; 5A; Igt: 50uA; IPAK; THT; tube; Ifsm: 75A
Type of thyristor: thyristor
Max. off-state voltage: 0.6kV
Max. load current: 8A
Load current: 5A
Gate current: 50µA
Case: IPAK
Mounting: THT
Kind of package: tube
Max. forward impulse current: 75A
Turn-on time: 2µs
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3750 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BT258X-500R,127 BT258X-500R,127 WeEn Semiconductors BT258X-500R.pdf Category: SMD/THT thyristors
Description: Thyristor; 500V; Ifmax: 8A; 5A; Igt: 50uA; TO220FP; THT; tube; 2us
Type of thyristor: thyristor
Max. off-state voltage: 500V
Max. load current: 8A
Load current: 5A
Gate current: 50µA
Case: TO220FP
Mounting: THT
Kind of package: tube
Max. forward impulse current: 75A
Turn-on time: 2µs
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BT258X-600R,127 BT258X-600R,127 WeEn Semiconductors BT258X-600R.pdf Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 8A; 5A; Igt: 50uA; TO220FP; THT; tube; 2us
Type of thyristor: thyristor
Max. off-state voltage: 0.6kV
Max. load current: 8A
Load current: 5A
Gate current: 50µA
Case: TO220FP
Mounting: THT
Kind of package: tube
Max. forward impulse current: 75A
Turn-on time: 2µs
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BT258X-800R,127 BT258X-800R,127 WeEn Semiconductors BT258X-800R.pdf Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 8A; 5A; Igt: 50uA; TO220FP; THT; tube; 2us
Type of thyristor: thyristor
Max. off-state voltage: 0.8kV
Max. load current: 8A
Load current: 5A
Gate current: 50µA
Case: TO220FP
Mounting: THT
Kind of package: tube
Max. forward impulse current: 75A
Turn-on time: 2µs
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BTA206X-800CT,127 BTA206X-800CT,127 WeEn Semiconductors BTA206X-800CT%20Product%20Rev.04.pdf Category: Triacs
Description: Triac; 800V; 6A; TO220FP; Igt: 35mA; Ifsm: 60A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 6A
Case: TO220FP
Gate current: 35mA
Max. forward impulse current: 60A
Technology: 3Q; Hi-Com
Features of semiconductor devices: high temperature
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
 Mindestbestellmenge: 6000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BTA206X-800CT/DG BTA206X-800CT/DG WeEn Semiconductors BTA206x-800CT.pdf _ween_psg2020.pdf Category: Triacs
Description: Triac; 800V; 6A; TO220FP; Igt: 35mA; Ifsm: 60A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 6A
Case: TO220FP
Gate current: 35mA
Max. forward impulse current: 60A
Technology: 3Q; Hi-Com
Features of semiconductor devices: high temperature
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BTA216B-800B,118 BTA216B-800B,118 WeEn Semiconductors bta216b-800b.pdf Category: Triacs
Description: Triac; 800V; 16A; D2PAK; Igt: 50mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: D2PAK
Gate current: 50mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
auf Bestellung 586 Stücke:
Lieferzeit 14-21 Tag (e)
39+2.21 EUR
59+1.46 EUR
100+1.02 EUR
500+0.74 EUR
Mindestbestellmenge: 39 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BTA216B-600D,118 BTA216B-600D,118 WeEn Semiconductors bta216b-600e.pdf Category: Triacs
Description: Triac; 600V; 16A; D2PAK; Igt: 5mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: D2PAK
Gate current: 5mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
auf Bestellung 601 Stücke:
Lieferzeit 14-21 Tag (e)
68+1.26 EUR
76+1.12 EUR
85+1 EUR
100+0.9 EUR
Mindestbestellmenge: 68 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BTA216-600D,127 BTA216-600D,127 WeEn Semiconductors bta216-600d.pdf Category: Triacs
Description: Triac; 600V; 16A; TO220AB; Igt: 5mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Gate current: 5mA
Case: TO220AB
Mounting: THT
Kind of package: tube
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BTA216-600B/DG,127 BTA216-600B/DG,127 WeEn Semiconductors BTA216_500B&600B&800B.pdf Category: Triacs
Description: Triac; 600V; 16A; TO220AB; Igt: 50mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Gate current: 50mA
Case: TO220AB
Mounting: THT
Kind of package: tube
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTA216-600B,127 BTA216-600B,127 WeEn Semiconductors bta216-800b.pdf Category: Triacs
Description: Triac; 600V; 16A; TO220AB; Igt: 50mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Gate current: 50mA
Case: TO220AB
Mounting: THT
Kind of package: tube
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTA216-600BT,127 BTA216-600BT,127 WeEn Semiconductors Category: Triacs
Description: Triac; 600V; 16A; TO220AB; Igt: 50mA; Ifsm: 150A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Gate current: 50mA
Case: TO220AB
Mounting: THT
Kind of package: tube
Max. forward impulse current: 150A
Technology: 3Q; Hi-Com
Features of semiconductor devices: high temperature; sensitive gate
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTA216-600E,127 BTA216-600E,127 WeEn Semiconductors bta216-600d.pdf Category: Triacs
Description: Triac; 600V; 16A; TO220AB; Igt: 10mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: TO220AB
Gate current: 10mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTA216-600F,127 BTA216-600F,127 WeEn Semiconductors BTA216-600F.pdf _ween_psg2020.pdf Category: Triacs
Description: Triac; 600V; 16A; TO220AB; Igt: 25mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: TO220AB
Gate current: 25mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BTA216B-600B,118 BTA216B-600B,118 WeEn Semiconductors bta216b-800b.pdf Category: Triacs
Description: Triac; 600V; 16A; D2PAK; Igt: 50mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: D2PAK
Gate current: 50mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTA216B-600E,118 BTA216B-600E,118 WeEn Semiconductors bta216b-600e.pdf Category: Triacs
Description: Triac; 600V; 16A; D2PAK; Igt: 10mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: D2PAK
Gate current: 10mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTA216B-600F,118 BTA216B-600F,118 WeEn Semiconductors bta216b-600e.pdf Category: Triacs
Description: Triac; 600V; 16A; D2PAK; Igt: 25mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: D2PAK
Gate current: 25mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SMBJ60CAJ SMBJ60CAJ WeEn Semiconductors SMBJ Series.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 67.2÷73.2V; 6.2A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 60V
Breakdown voltage: 67.2...73.2V
Max. forward impulse current: 6.2A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BYQ72EK-200Q BYQ72EK-200Q WeEn Semiconductors Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 15Ax2; tube; Ifsm: 200A; SOT1259,TO3P
Semiconductor structure: common cathode; double
Type of diode: rectifying
Mounting: THT
Case: SOT1259; TO3P
Kind of package: tube
Features of semiconductor devices: ultrafast switching
Reverse recovery time: 25ns
Max. forward voltage: 0.78V
Load current: 15A x2
Max. load current: 30A
Max. forward impulse current: 200A
Max. off-state voltage: 200V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 900 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
5.0SMDJ43CAJ WeEn Semiconductors 5.0SMDJ.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 5kW; 47.8÷52.8V; 72.1A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 5kW
Max. off-state voltage: 43V
Breakdown voltage: 47.8...52.8V
Max. forward impulse current: 72.1A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: 5.0SMDJ
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
ESDHD03UFX WeEn Semiconductors ESDHDxxUF%20Series.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 4÷8V; 24A; unidirectional; DFN1006-2; reel,tape
Mounting: SMD
Kind of package: reel; tape
Type of diode: TVS
Semiconductor structure: unidirectional
Leakage current: 1µA
Number of channels: 1
Max. off-state voltage: 3.3V
Breakdown voltage: 4...8V
Max. forward impulse current: 24A
Manufacturer series: HD
Case: DFN1006-2
Version: ESD
Produkt ist nicht verfügbar
 Mindestbestellmenge: 10000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
ESDHD05UFX WeEn Semiconductors ESDHD05UF.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 320W; 6÷9.5V; 20A; unidirectional; DFN1006-2; Ch: 1
Mounting: SMD
Kind of package: reel; tape
Type of diode: TVS
Semiconductor structure: unidirectional
Leakage current: 0.1µA
Number of channels: 1
Max. off-state voltage: 5V
Breakdown voltage: 6...9.5V
Max. forward impulse current: 20A
Manufacturer series: HD
Peak pulse power dissipation: 320W
Case: DFN1006-2
Version: ESD
Produkt ist nicht verfügbar
 Mindestbestellmenge: 10000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
ESDALD05BCX ESDALD05BCX WeEn Semiconductors ESDALDxxBC.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 6.5V; 15A; 350W; bidirectional; ESD; SOD323; Ch: 1
Peak pulse power dissipation: 0.35kW
Case: SOD323
Version: ESD
Manufacturer series: LD
Kind of package: reel; tape
Mounting: SMD
Type of diode: TVS array
Leakage current: 1µA
Number of channels: 1
Max. forward impulse current: 15A
Max. off-state voltage: 5V
Breakdown voltage: 6.5V
Semiconductor structure: bidirectional
Produkt ist nicht verfügbar
 Mindestbestellmenge: 90000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BYC5D-500,127 PHGLS23037-1.pdf?t.download=true&u=5oefqw
BYC5D-500,127
Hersteller: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 500V; 5A; tube; Ifsm: 44A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 500V
Load current: 5A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 44A
Case: SOD59; TO220AC
Max. forward voltage: 1.45V
Reverse recovery time: 16ns
auf Bestellung 847 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
93+0.92 EUR
110+0.77 EUR
136+0.63 EUR
250+0.57 EUR
500+0.54 EUR
Mindestbestellmenge: 93 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BT151X-500C,127 BT151X-500C-127.pdf BT151X-500C.pdf
BT151X-500C,127
Hersteller: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 500V; Ifmax: 12A; 7.5A; Igt: 2mA; TO220FP; THT; tube; 2us
Type of thyristor: thyristor
Max. off-state voltage: 500V
Max. load current: 12A
Load current: 7.5A
Gate current: 2mA
Case: TO220FP
Mounting: THT
Kind of package: tube
Max. forward impulse current: 100A
Turn-on time: 2µs
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BYV72EW-200,127 byv72ew-200.pdf
BYV72EW-200,127
Hersteller: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 15Ax2; tube; Ifsm: 185A; TO247-3; 28ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 15A x2
Semiconductor structure: common cathode; double
Kind of package: tube
Max. forward impulse current: 185A
Case: TO247-3
Max. forward voltage: 1.2V
Max. load current: 30A
Reverse recovery time: 28ns
auf Bestellung 1789 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
36+2.37 EUR
63+1.36 EUR
Mindestbestellmenge: 36 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BTA316X-800C/L03Q BTA316X-800C.pdf
BTA316X-800C/L03Q
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 16A; TO220FP; Igt: 35mA; Ifsm: 150A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: TO220FP
Gate current: 35mA
Max. forward impulse current: 150A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
ESDALD05UE2X ESDALD05UE2.pdf
ESDALD05UE2X
Hersteller: WeEn Semiconductors
Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; 4A; 60W; unidirectional; ESD; SOT23-3; Ch: 2; LD
Application: HDMI; USB
Peak pulse power dissipation: 60W
Case: SOT23-3
Version: ESD
Manufacturer series: LD
Kind of package: reel; tape
Mounting: SMD
Type of diode: TVS array
Leakage current: 0.1µA
Number of channels: 2
Max. forward impulse current: 4A
Max. off-state voltage: 5V
Breakdown voltage: 6V
Semiconductor structure: unidirectional
Produkt ist nicht verfügbar
Mindestbestellmenge: 90000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
ESDALD05UG4X ESDALD05UG4.pdf
Hersteller: WeEn Semiconductors
Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; 4A; 60W; unidirectional; ESD; DFN2510; Ch: 4; LD
Application: HDMI; USB
Peak pulse power dissipation: 60W
Case: DFN2510
Version: ESD
Manufacturer series: LD
Kind of package: reel; tape
Mounting: SMD
Type of diode: TVS array
Leakage current: 0.1µA
Number of channels: 4
Max. forward impulse current: 4A
Max. off-state voltage: 5V
Breakdown voltage: 6V
Semiconductor structure: unidirectional
Produkt ist nicht verfügbar
Mindestbestellmenge: 90000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BTA140-800.127 BTA140-800.pdf _ween_psg2020.pdf
BTA140-800.127
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 25A; TO220AB; Igt: 35/70mA; Ifsm: 190A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 25A
Case: TO220AB
Gate current: 35/70mA
Max. forward impulse current: 190A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WNC3060D45160WQ _ween_psg2020.pdf WNC3060D45160WQ.pdf
WNC3060D45160WQ
Hersteller: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 270A; TO247-3; 29ns
Semiconductor structure: common cathode; double
Mounting: THT
Type of diode: rectifying
Case: TO247-3
Reverse recovery time: 29ns
Max. forward voltage: 1.38V
Load current: 30A
Max. forward impulse current: 270A
Max. off-state voltage: 0.6kV
Kind of package: tube
Features of semiconductor devices: bypass diode; ultrafast switching
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WNSC2M40120B76J WNSC2M40120B76J.pdf
Hersteller: WeEn Semiconductors
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 61A; Idm: 170A; 500W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 61A
Pulsed drain current: 170A
Power dissipation: 500W
Case: TO263-7
Gate-source voltage: -4...18V
On-state resistance: 56mΩ
Mounting: SMD
Gate charge: 115nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BYQ28X-200,127 byq28x-200.pdf
BYQ28X-200,127
Hersteller: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 5Ax2; tube; Ifsm: 55A; Ufmax: 1.25V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 5A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 55A
Case: SOD113; TO220FP-2
Max. forward voltage: 1.25V
Max. load current: 10A
Reverse recovery time: 25ns
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BT136X-800,127 BT136X-800.pdf
BT136X-800,127
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 4A; TO220FP; Igt: 35/70mA; Ifsm: 25A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 4A
Case: TO220FP
Gate current: 35/70mA
Max. forward impulse current: 25A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BUJ302AD,118 BUJ302AD.pdf
BUJ302AD,118
Hersteller: WeEn Semiconductors
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 400V; 4A; 80W; DPAK
Mounting: SMD
Type of transistor: NPN
Kind of package: reel; tape
Collector current: 4A
Current gain: 25...50
Power dissipation: 80W
Collector-emitter voltage: 400V
Polarisation: bipolar
Case: DPAK
auf Bestellung 314 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
72+1.19 EUR
91+0.94 EUR
103+0.83 EUR
129+0.67 EUR
Mindestbestellmenge: 72 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BUJ302A,127 PHGLS22628-1.pdf?t.download=true&u=5oefqw
BUJ302A,127
Hersteller: WeEn Semiconductors
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 400V; 4A; 80W; TO220AB
Mounting: THT
Type of transistor: NPN
Kind of package: tube
Collector current: 4A
Current gain: 25...50
Power dissipation: 80W
Collector-emitter voltage: 400V
Polarisation: bipolar
Case: TO220AB
auf Bestellung 134 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
85+1 EUR
117+0.73 EUR
134+0.63 EUR
Mindestbestellmenge: 85 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BUJ302AX,127 buj302ax.pdf
BUJ302AX,127
Hersteller: WeEn Semiconductors
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 400V; 4A; 26W; TO220FP
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 400V
Collector current: 4A
Power dissipation: 26W
Case: TO220FP
Current gain: 25...50
Mounting: THT
Kind of package: tube
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
85+1 EUR
117+0.73 EUR
145+0.6 EUR
161+0.54 EUR
182+0.46 EUR
Mindestbestellmenge: 85 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
WND35P08XQ WND35P08XQ.pdf
Hersteller: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 35A; tube; Ifsm: 400A; Ufmax: 1.35V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.8kV
Load current: 35A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 0.4kA
Case: SOD113; TO220FP-2
Max. forward voltage: 1.35V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SMDJ40AJ SMDJ Series.pdf
Hersteller: WeEn Semiconductors
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 44.8÷48.8V; 46.5A; unidirectional; SMC; reel,tape
Type of diode: TVS
Max. off-state voltage: 40V
Semiconductor structure: unidirectional
Mounting: SMD
Kind of package: reel; tape
Leakage current: 1µA
Case: SMC
Breakdown voltage: 44.8...48.8V
Manufacturer series: SMDJ
Max. forward impulse current: 46.5A
Peak pulse power dissipation: 3kW
Produkt ist nicht verfügbar
Mindestbestellmenge: 6000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BTA316-800ET,127 BTA316-800ET.pdf _ween_psg2020.pdf
BTA316-800ET,127
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 16A; TO220AB; Igt: 10mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: TO220AB
Gate current: 10mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: high temperature; sensitive gate
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
OT412,115
OT412,115
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 1A; SOT223; 4Q; sensitive gate
Type of thyristor: triac
Max. load current: 1A
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: sensitive gate
Technology: 4Q
auf Bestellung 776 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
260+0.33 EUR
317+0.27 EUR
360+0.24 EUR
374+0.23 EUR
Mindestbestellmenge: 260 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
WMSC016H12B1P6T WMSC016H12B1P6T.pdf
Hersteller: WeEn Semiconductors
Category: Transistor modules
Description: Module; transistor/transistor; 1.2kV; 85A; Press-in PCB; Idm: 170A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 85A
Topology: MOSFET half-bridge; NTC thermistor
Electrical mounting: Press-in PCB
On-state resistance: 16mΩ
Pulsed drain current: 170A
Power dissipation: 146W
Technology: SiC
Gate-source voltage: -4...18V
Mechanical mounting: screw
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMSC030H12B1P6T WMSC030H12B1P6T.pdf
Hersteller: WeEn Semiconductors
Category: Transistor modules
Description: Module; transistor/transistor; 1.2kV; 53A; Press-in PCB; Idm: 100A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 53A
Topology: MOSFET half-bridge; NTC thermistor
Electrical mounting: Press-in PCB
On-state resistance: 30mΩ
Pulsed drain current: 100A
Power dissipation: 111W
Technology: SiC
Gate-source voltage: -4...18V
Mechanical mounting: screw
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMSC020H12B1P6T WMSC020H12B1P6T.pdf
Hersteller: WeEn Semiconductors
Category: Transistor modules
Description: Module; transistor/transistor; 1.2kV; 70A; Press-in PCB; Idm: 140A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 70A
Topology: MOSFET half-bridge; NTC thermistor
Electrical mounting: Press-in PCB
On-state resistance: 20mΩ
Pulsed drain current: 140A
Power dissipation: 118W
Technology: SiC
Gate-source voltage: -4...18V
Mechanical mounting: screw
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMSC040H12B1P6T WMSC040H12B1P6T.pdf
Hersteller: WeEn Semiconductors
Category: Transistor modules
Description: Module; transistor/transistor; 1.2kV; 45A; Press-in PCB; Idm: 90A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 45A
Topology: MOSFET half-bridge; NTC thermistor
Electrical mounting: Press-in PCB
On-state resistance: 40mΩ
Pulsed drain current: 90A
Power dissipation: 105W
Technology: SiC
Gate-source voltage: -4...18V
Mechanical mounting: screw
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMSC010H12B1P6T WMSC010H12B1P6T.pdf
Hersteller: WeEn Semiconductors
Category: Transistor modules
Description: Module; transistor/transistor; 1.2kV; 107A; Press-in PCB; 152W
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 107A
Topology: MOSFET half-bridge; NTC thermistor
Electrical mounting: Press-in PCB
On-state resistance: 10mΩ
Pulsed drain current: 210A
Power dissipation: 152W
Technology: SiC
Gate-source voltage: -4...18V
Mechanical mounting: screw
Produkt ist nicht verfügbar
Mindestbestellmenge: 16 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BTA312-600B,127 BTA312-600B.pdf
BTA312-600B,127
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 12A; TO220AB; Igt: 50mA; Ifsm: 100A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: TO220AB
Gate current: 50mA
Max. forward impulse current: 100A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
ESDALD03BCX ESDALDxxBC.pdf
ESDALD03BCX
Hersteller: WeEn Semiconductors
Category: Protection diodes - arrays
Description: Diode: TVS array; 4.5V; 20A; 350W; bidirectional; ESD; SOD323; Ch: 1
Mounting: SMD
Case: SOD323
Kind of package: reel; tape
Breakdown voltage: 4.5V
Manufacturer series: LD
Max. forward impulse current: 20A
Peak pulse power dissipation: 0.35kW
Version: ESD
Max. off-state voltage: 3.3V
Semiconductor structure: bidirectional
Leakage current: 1µA
Type of diode: TVS array
Number of channels: 1
Produkt ist nicht verfügbar
Mindestbestellmenge: 90000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NCR100W-10MX NCR100W-10M.pdf
NCR100W-10MX
Hersteller: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 850V; Ifmax: 1.1A; 0.8A; Igt: 100uA; SOT223; SMD; Ifsm: 11A
Type of thyristor: thyristor
Max. off-state voltage: 850V
Max. load current: 1.1A
Load current: 0.8A
Gate current: 100µA
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 11A
Turn-on time: 2µs
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTA208X-1000C0,127 BTA208X-1000C0.pdf
BTA208X-1000C0,127
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 1kV; 8A; TO220FP; Igt: 35mA; Ifsm: 71A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 1kV
Max. load current: 8A
Case: TO220FP
Gate current: 35mA
Max. forward impulse current: 71A
Technology: 3Q; Hi-Com
Features of semiconductor devices: high commutation
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTA208X-1000C0/L01 BTA208X-1000C0.pdf
BTA208X-1000C0/L01
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 1kV; 8A; TO220FP; Igt: 35mA; Ifsm: 71A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 1kV
Max. load current: 8A
Case: TO220FP
Gate current: 35mA
Max. forward impulse current: 71A
Technology: 3Q; Hi-Com
Features of semiconductor devices: high commutation
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BYV430W-300PQ
BYV430W-300PQ
Hersteller: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 15Ax2; tube; Ifsm: 330A; TO247-3; 50ns
Case: TO247-3
Mounting: THT
Kind of package: tube
Type of diode: rectifying
Reverse recovery time: 50ns
Max. forward voltage: 1V
Load current: 15A x2
Max. load current: 30A
Max. forward impulse current: 330A
Max. off-state voltage: 300V
Semiconductor structure: common cathode; double
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BYV430W-600PQ BYV430W-600P.pdf _ween_psg2020.pdf
BYV430W-600PQ
Hersteller: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30Ax2; tube; Ifsm: 180A; TO247-3; 90ns
Case: TO247-3
Mounting: THT
Kind of package: tube
Features of semiconductor devices: ultrafast switching
Type of diode: rectifying
Reverse recovery time: 90ns
Max. forward voltage: 2V
Load current: 30A x2
Max. load current: 60A
Max. forward impulse current: 180A
Max. off-state voltage: 0.6kV
Semiconductor structure: common cathode; double
Produkt ist nicht verfügbar
Mindestbestellmenge: 600 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
WNS20S100CBJ WNS20S100CB.pdf
WNS20S100CBJ
Hersteller: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 100V; 10Ax2; reel,tape
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.8V
Max. load current: 20A
Max. forward impulse current: 120A
Kind of package: reel; tape
auf Bestellung 22 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
22+3.87 EUR
Mindestbestellmenge: 22 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BYC5-600,127 BYC5-600.pdf _ween_psg2020.pdf
BYC5-600,127
Hersteller: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 5A; tube; Ifsm: 44A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 5A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 44A
Case: SOD59; TO220AC
Max. forward voltage: 1.4V
Reverse recovery time: 50ns
Heatsink thickness: 1.27...1.39mm
auf Bestellung 703 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
125+0.68 EUR
149+0.57 EUR
165+0.51 EUR
174+0.49 EUR
Mindestbestellmenge: 125 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BYC5X-600PQ BYC5X-600P.pdf
BYC5X-600PQ
Hersteller: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 5A; tube; Ifsm: 60A; SOD113,TO220FP-2
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 5A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 60A
Case: SOD113; TO220FP-2
Max. forward voltage: 2.1V
Max. load current: 10A
Reverse recovery time: 11ns
auf Bestellung 35 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
35+2.43 EUR
Mindestbestellmenge: 35 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BYC5-1200PQ BYC5-1200P.pdf
BYC5-1200PQ
Hersteller: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 5A; tube; Ifsm: 55A; SOD59,TO220AC
Type of diode: rectifying
Case: SOD59; TO220AC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 5A
Semiconductor structure: single diode
Max. forward impulse current: 55A
Kind of package: tube
Reverse recovery time: 42ns
Features of semiconductor devices: superfast switching
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BYC5B-600,118 BYC5B-600.pdf PHGLS23444-1.pdf?t.download=true&u=5oefqw
BYC5B-600,118
Hersteller: WeEn Semiconductors
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 5A; 30ns; D2PAK,SOT404; Ufmax: 2.2V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 5A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 44A
Case: D2PAK; SOT404
Max. forward voltage: 2.2V
Reverse recovery time: 30ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BYC5DX-500,127 BYC5DX-500.pdf PHGLS23038-1.pdf?t.download=true&u=5oefqw
BYC5DX-500,127
Hersteller: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 500V; 5A; tube; Ifsm: 40A; SOD113,TO220FP-2
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 500V
Load current: 5A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Kind of package: tube
Max. forward impulse current: 40A
Case: SOD113; TO220FP-2
Max. forward voltage: 1.15V
Reverse recovery time: 16ns
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BYC5X-600,127 BYC5X-600.pdf
BYC5X-600,127
Hersteller: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 5A; tube; Ifsm: 44A; SOD113,TO220FP-2
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 5A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 44A
Case: SOD113; TO220FP-2
Max. forward voltage: 2.2V
Reverse recovery time: 30ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BT258U-600R,127 BT258U-600R.pdf
BT258U-600R,127
Hersteller: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 8A; 5A; Igt: 50uA; IPAK; THT; tube; Ifsm: 75A
Type of thyristor: thyristor
Max. off-state voltage: 0.6kV
Max. load current: 8A
Load current: 5A
Gate current: 50µA
Case: IPAK
Mounting: THT
Kind of package: tube
Max. forward impulse current: 75A
Turn-on time: 2µs
Produkt ist nicht verfügbar
Mindestbestellmenge: 3750 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BT258X-500R,127 BT258X-500R.pdf
BT258X-500R,127
Hersteller: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 500V; Ifmax: 8A; 5A; Igt: 50uA; TO220FP; THT; tube; 2us
Type of thyristor: thyristor
Max. off-state voltage: 500V
Max. load current: 8A
Load current: 5A
Gate current: 50µA
Case: TO220FP
Mounting: THT
Kind of package: tube
Max. forward impulse current: 75A
Turn-on time: 2µs
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BT258X-600R,127 BT258X-600R.pdf
BT258X-600R,127
Hersteller: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 8A; 5A; Igt: 50uA; TO220FP; THT; tube; 2us
Type of thyristor: thyristor
Max. off-state voltage: 0.6kV
Max. load current: 8A
Load current: 5A
Gate current: 50µA
Case: TO220FP
Mounting: THT
Kind of package: tube
Max. forward impulse current: 75A
Turn-on time: 2µs
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BT258X-800R,127 BT258X-800R.pdf
BT258X-800R,127
Hersteller: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 8A; 5A; Igt: 50uA; TO220FP; THT; tube; 2us
Type of thyristor: thyristor
Max. off-state voltage: 0.8kV
Max. load current: 8A
Load current: 5A
Gate current: 50µA
Case: TO220FP
Mounting: THT
Kind of package: tube
Max. forward impulse current: 75A
Turn-on time: 2µs
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BTA206X-800CT,127 BTA206X-800CT%20Product%20Rev.04.pdf
BTA206X-800CT,127
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 6A; TO220FP; Igt: 35mA; Ifsm: 60A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 6A
Case: TO220FP
Gate current: 35mA
Max. forward impulse current: 60A
Technology: 3Q; Hi-Com
Features of semiconductor devices: high temperature
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
Mindestbestellmenge: 6000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BTA206X-800CT/DG BTA206x-800CT.pdf _ween_psg2020.pdf
BTA206X-800CT/DG
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 6A; TO220FP; Igt: 35mA; Ifsm: 60A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 6A
Case: TO220FP
Gate current: 35mA
Max. forward impulse current: 60A
Technology: 3Q; Hi-Com
Features of semiconductor devices: high temperature
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BTA216B-800B,118 bta216b-800b.pdf
BTA216B-800B,118
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 16A; D2PAK; Igt: 50mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: D2PAK
Gate current: 50mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
auf Bestellung 586 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
39+2.21 EUR
59+1.46 EUR
100+1.02 EUR
500+0.74 EUR
Mindestbestellmenge: 39 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BTA216B-600D,118 bta216b-600e.pdf
BTA216B-600D,118
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 16A; D2PAK; Igt: 5mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: D2PAK
Gate current: 5mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
auf Bestellung 601 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
68+1.26 EUR
76+1.12 EUR
85+1 EUR
100+0.9 EUR
Mindestbestellmenge: 68 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BTA216-600D,127 bta216-600d.pdf
BTA216-600D,127
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 16A; TO220AB; Igt: 5mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Gate current: 5mA
Case: TO220AB
Mounting: THT
Kind of package: tube
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BTA216-600B/DG,127 BTA216_500B&600B&800B.pdf
BTA216-600B/DG,127
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 16A; TO220AB; Igt: 50mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Gate current: 50mA
Case: TO220AB
Mounting: THT
Kind of package: tube
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTA216-600B,127 bta216-800b.pdf
BTA216-600B,127
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 16A; TO220AB; Igt: 50mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Gate current: 50mA
Case: TO220AB
Mounting: THT
Kind of package: tube
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTA216-600BT,127
BTA216-600BT,127
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 16A; TO220AB; Igt: 50mA; Ifsm: 150A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Gate current: 50mA
Case: TO220AB
Mounting: THT
Kind of package: tube
Max. forward impulse current: 150A
Technology: 3Q; Hi-Com
Features of semiconductor devices: high temperature; sensitive gate
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTA216-600E,127 bta216-600d.pdf
BTA216-600E,127
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 16A; TO220AB; Igt: 10mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: TO220AB
Gate current: 10mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTA216-600F,127 BTA216-600F.pdf _ween_psg2020.pdf
BTA216-600F,127
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 16A; TO220AB; Igt: 25mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: TO220AB
Gate current: 25mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BTA216B-600B,118 bta216b-800b.pdf
BTA216B-600B,118
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 16A; D2PAK; Igt: 50mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: D2PAK
Gate current: 50mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTA216B-600E,118 bta216b-600e.pdf
BTA216B-600E,118
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 16A; D2PAK; Igt: 10mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: D2PAK
Gate current: 10mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTA216B-600F,118 bta216b-600e.pdf
BTA216B-600F,118
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 16A; D2PAK; Igt: 25mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: D2PAK
Gate current: 25mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SMBJ60CAJ SMBJ Series.pdf
SMBJ60CAJ
Hersteller: WeEn Semiconductors
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 67.2÷73.2V; 6.2A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 60V
Breakdown voltage: 67.2...73.2V
Max. forward impulse current: 6.2A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BYQ72EK-200Q
BYQ72EK-200Q
Hersteller: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 15Ax2; tube; Ifsm: 200A; SOT1259,TO3P
Semiconductor structure: common cathode; double
Type of diode: rectifying
Mounting: THT
Case: SOT1259; TO3P
Kind of package: tube
Features of semiconductor devices: ultrafast switching
Reverse recovery time: 25ns
Max. forward voltage: 0.78V
Load current: 15A x2
Max. load current: 30A
Max. forward impulse current: 200A
Max. off-state voltage: 200V
Produkt ist nicht verfügbar
Mindestbestellmenge: 900 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
5.0SMDJ43CAJ 5.0SMDJ.pdf
Hersteller: WeEn Semiconductors
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 5kW; 47.8÷52.8V; 72.1A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 5kW
Max. off-state voltage: 43V
Breakdown voltage: 47.8...52.8V
Max. forward impulse current: 72.1A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: 5.0SMDJ
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
ESDHD03UFX ESDHDxxUF%20Series.pdf
Hersteller: WeEn Semiconductors
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 4÷8V; 24A; unidirectional; DFN1006-2; reel,tape
Mounting: SMD
Kind of package: reel; tape
Type of diode: TVS
Semiconductor structure: unidirectional
Leakage current: 1µA
Number of channels: 1
Max. off-state voltage: 3.3V
Breakdown voltage: 4...8V
Max. forward impulse current: 24A
Manufacturer series: HD
Case: DFN1006-2
Version: ESD
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
ESDHD05UFX ESDHD05UF.pdf
Hersteller: WeEn Semiconductors
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 320W; 6÷9.5V; 20A; unidirectional; DFN1006-2; Ch: 1
Mounting: SMD
Kind of package: reel; tape
Type of diode: TVS
Semiconductor structure: unidirectional
Leakage current: 0.1µA
Number of channels: 1
Max. off-state voltage: 5V
Breakdown voltage: 6...9.5V
Max. forward impulse current: 20A
Manufacturer series: HD
Peak pulse power dissipation: 320W
Case: DFN1006-2
Version: ESD
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
ESDALD05BCX ESDALDxxBC.pdf
ESDALD05BCX
Hersteller: WeEn Semiconductors
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.5V; 15A; 350W; bidirectional; ESD; SOD323; Ch: 1
Peak pulse power dissipation: 0.35kW
Case: SOD323
Version: ESD
Manufacturer series: LD
Kind of package: reel; tape
Mounting: SMD
Type of diode: TVS array
Leakage current: 1µA
Number of channels: 1
Max. forward impulse current: 15A
Max. off-state voltage: 5V
Breakdown voltage: 6.5V
Semiconductor structure: bidirectional
Produkt ist nicht verfügbar
Mindestbestellmenge: 90000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
Wählen Sie Seite:   [  << Vorherige Seite ]  1 9 18 27 36 45 54 63 72 81 90 92 93 94 95 96 97 98 99  [ Nächste Seite >> ]