Produkte > WEEN SEMICONDUCTORS > Alle Produkte des Herstellers WEEN SEMICONDUCTORS (5984) > Seite 97 nach 100

Wählen Sie Seite:   [  << Vorherige Seite ]  1 10 20 30 40 50 60 70 80 90 92 93 94 95 96 97 98 99 100  [ Nächste Seite >> ]
Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
BTA420X-800CT/L02Q WeEn Semiconductors bta420x-800ct.pdf Category: Triacs
Description: Triac; 800V; 20A; TO220FP; Igt: 35mA; Ifsm: 200A; 3Q,Hi-Com
Mounting: THT
Features of semiconductor devices: high temperature; sensitive gate
Kind of package: tube
Case: TO220FP
Type of thyristor: triac
Gate current: 35mA
Max. load current: 20A
Max. forward impulse current: 200A
Max. off-state voltage: 0.8kV
Technology: 3Q; Hi-Com
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NXPSC04650Q NXPSC04650Q WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB752F1ED782E2961E4B34E259&compId=NXPSC04650.pdf?ci_sign=e9c051ee7b322030c5a68ad03dcf007e06e5002b pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36 Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220AC; Ufmax: 1.5V
Semiconductor structure: single diode
Case: TO220AC
Mounting: THT
Type of diode: Schottky rectifying
Load current: 4A
Max. forward voltage: 1.5V
Max. load current: 8A
Max. forward impulse current: 24A
Technology: SiC
Max. off-state voltage: 650V
Kind of package: tube
auf Bestellung 25 Stücke:
Lieferzeit 14-21 Tag (e)
25+2.86 EUR
Mindestbestellmenge: 25
Im Einkaufswagen  Stück im Wert von  UAH
BT151X-650LTNQ BT151X-650LTNQ WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BD9688018A2BC0C4&compId=BT151X-650LTN.pdf?ci_sign=1ed6a1a58ca20f7b73dcb93edd4d70539c929d76 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36 Category: SMD/THT thyristors
Description: Thyristor; 650V; Ifmax: 12A; 7.5A; Igt: 5mA; TO220FP; THT; tube; 2us
Type of thyristor: thyristor
Max. off-state voltage: 650V
Max. load current: 12A
Load current: 7.5A
Gate current: 5mA
Case: TO220FP
Mounting: THT
Kind of package: tube
Max. forward impulse current: 120A
Turn-on time: 2µs
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BT258-600R,127 BT258-600R,127 WeEn Semiconductors bt258-600r.pdf Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 8A; 5A; Igt: 50uA; TO220AB; THT; tube; 2us
Case: TO220AB
Mounting: THT
Type of thyristor: thyristor
Turn-on time: 2µs
Gate current: 50µA
Load current: 5A
Max. load current: 8A
Max. forward impulse current: 75A
Max. off-state voltage: 0.6kV
Kind of package: tube
auf Bestellung 867 Stücke:
Lieferzeit 14-21 Tag (e)
70+1.03 EUR
106+0.68 EUR
206+0.35 EUR
218+0.33 EUR
Mindestbestellmenge: 70
Im Einkaufswagen  Stück im Wert von  UAH
BT138B-600F,118 BT138B-600F,118 WeEn Semiconductors bt138b-600f.pdf Category: Triacs
Description: Triac; 600V; 12A; D2PAK; Igt: 25/70mA; Ifsm: 95A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: D2PAK
Gate current: 25/70mA
Max. forward impulse current: 95A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BT138B-600G,118 BT138B-600G,118 WeEn Semiconductors bt138b-600g.pdf Category: Triacs
Description: Triac; 600V; 12A; D2PAK; Igt: 50/100mA; Ifsm: 95A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: D2PAK
Gate current: 50/100mA
Max. forward impulse current: 95A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMSC008H12B1P6T WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB281E1EDF93CE064EDAC100D6&compId=WMSC008H12B1P6T.pdf?ci_sign=e232c0757dee7bd2d1c2df53cb2b58987cd56b96 Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 153A; Press-in PCB; 244W
Topology: MOSFET half-bridge; NTC thermistor
Technology: SiC
Type of semiconductor module: MOSFET transistor
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Gate-source voltage: -4...18V
On-state resistance: 8mΩ
Power dissipation: 244W
Drain current: 153A
Drain-source voltage: 1.2kV
Pulsed drain current: 300A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTA216X-600E,127 BTA216X-600E,127 WeEn Semiconductors bta216x-600e.pdf Category: Triacs
Description: Triac; 600V; 16A; TO220FP; Igt: 10mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: TO220FP
Gate current: 10mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTA216B-600B,118 BTA216B-600B,118 WeEn Semiconductors bta216b-800b.pdf Category: Triacs
Description: Triac; 600V; 16A; D2PAK; Igt: 50mA; Ifsm: 140A; 3Q,Hi-Com
Mounting: SMD
Max. forward impulse current: 140A
Max. off-state voltage: 0.6kV
Technology: 3Q; Hi-Com
Case: D2PAK
Features of semiconductor devices: sensitive gate
Kind of package: reel; tape
Type of thyristor: triac
Gate current: 50mA
Max. load current: 16A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTA201-600B,112 BTA201-600B,112 WeEn Semiconductors bta201-600b.pdf BTA201-600B%2C112.pdf Category: Triacs
Description: Triac; 600V; 1A; TO92; Igt: 50mA; Ifsm: 12.5A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 1A
Case: TO92
Gate current: 50mA
Max. forward impulse current: 12.5A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTA201-600E,112 BTA201-600E,112 WeEn Semiconductors bta201-600b.pdf Category: Triacs
Description: Triac; 600V; 1A; TO92; Igt: 10mA; Ifsm: 12.5A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 1A
Case: TO92
Gate current: 10mA
Max. forward impulse current: 12.5A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTA201-600E,126 WeEn Semiconductors bta201-600b.pdf Category: Triacs
Description: Triac; 600V; 1A; TO92; Igt: 10mA; Ifsm: 12.5A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 1A
Case: TO92
Gate current: 10mA
Max. forward impulse current: 12.5A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTA201-600E/L01EP WeEn Semiconductors bta201-600e.pdf Category: Triacs
Description: Triac; 600V; 1A; TO92; Igt: 10mA; Ifsm: 12.5A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 1A
Case: TO92
Gate current: 10mA
Max. forward impulse current: 12.5A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BYV44-500,127 BYV44-500,127 WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB752F1EE890C1AA1C3B2553D3&compId=BYV44_SERIES.pdf?ci_sign=a7c531bba633e2dae5929f3ce3e4f1e9cc40c321 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36 Category: THT universal diodes
Description: Diode: rectifying; THT; 500V; 15Ax2; tube; Ifsm: 150A; SOT78,TO220AB
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 500V
Load current: 15A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 150A
Case: SOT78; TO220AB
Max. forward voltage: 1.15V
Max. load current: 30A
Heatsink thickness: max. 1.3mm
Reverse recovery time: 60ns
auf Bestellung 884 Stücke:
Lieferzeit 14-21 Tag (e)
44+1.64 EUR
48+1.52 EUR
57+1.26 EUR
80+0.9 EUR
84+0.86 EUR
Mindestbestellmenge: 44
Im Einkaufswagen  Stück im Wert von  UAH
MCR100W-10MF WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB281E1EDF9ECD69F882E200D6&compId=MCR100W-10M.pdf?ci_sign=9653c51bcd73ebf8af0e1cf7ae4fcdc6800da1e6 Category: SMD/THT thyristors
Description: Thyristor; 1kV; Ifmax: 1.25A; 0.8A; Igt: 90uA; SOT223; SMD; reel,tape
Type of thyristor: thyristor
Max. off-state voltage: 1kV
Max. load current: 1.25A
Load current: 0.8A
Gate current: 90µA
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 23A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTA425Z-800CTQ WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB90B41EDC85C3F27125BEE0C7&compId=BTA425Z-800CT.pdf?ci_sign=1a20e9965f1867914335ae424f74c46cabdfb99e Category: Triacs
Description: Triac; 800V; 25A; SOT1292,TO3P; Igt: 35mA; Ifsm: 250A; 3Q,Hi-Com
Case: SOT1292; TO3P
Mounting: THT
Kind of package: tube
Gate current: 35mA
Features of semiconductor devices: high temperature; sensitive gate
Type of thyristor: triac
Technology: 3Q; Hi-Com
Max. load current: 25A
Max. forward impulse current: 250A
Max. off-state voltage: 0.8kV
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BT168E,112 BT168E,112 WeEn Semiconductors bt168e.pdf Category: SMD/THT thyristors
Description: Thyristor; 500V; Ifmax: 0.8A; 0.5A; Igt: 50uA; TO92; THT; bulk; 2us
Mounting: THT
Case: TO92
Kind of package: bulk
Type of thyristor: thyristor
Turn-on time: 2µs
Gate current: 50µA
Load current: 0.5A
Max. load current: 0.8A
Max. forward impulse current: 8A
Max. off-state voltage: 500V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WNS30H100CBJ WNS30H100CBJ WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB90B41EDB9B88F4CE537300C7&compId=WNS30H100CB.pdf?ci_sign=fff43d3e7cd0a0f80aba86033199a9360fbcee18 Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 100V; 15Ax2; reel,tape
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 100V
Load current: 15A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.67V
Max. load current: 30A
Max. forward impulse current: 330A
Kind of package: reel; tape
auf Bestellung 280 Stücke:
Lieferzeit 14-21 Tag (e)
39+1.86 EUR
61+1.18 EUR
111+0.65 EUR
117+0.61 EUR
Mindestbestellmenge: 39
Im Einkaufswagen  Stück im Wert von  UAH
BTA201-800ER,126 BTA201-800ER,126 WeEn Semiconductors bta201-800er.pdf Category: Triacs
Description: Triac; 800V; 1A; TO92; Igt: 10mA; Ifsm: 12.5A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 1A
Case: TO92
Gate current: 10mA
Max. forward impulse current: 12.5A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: Ammo Pack
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTA201-800B,112 BTA201-800B,112 WeEn Semiconductors bta201-800e.pdf Category: Triacs
Description: Triac; 800V; 1A; TO92; Igt: 50mA; Ifsm: 12.5A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 1A
Case: TO92
Gate current: 50mA
Max. forward impulse current: 12.5A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTA201-800ER,412 BTA201-800ER,412 WeEn Semiconductors bta201-800er.pdf Category: Triacs
Description: Triac; 800V; 1A; TO92; Igt: 10mA; Ifsm: 12.5A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 1A
Case: TO92
Gate current: 10mA
Mounting: THT
Kind of package: bulk
Technology: 3Q; Hi-Com
Max. forward impulse current: 12.5A
Features of semiconductor devices: sensitive gate
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTA201-800E,112 BTA201-800E,112 WeEn Semiconductors bta201-800e.pdf Category: Triacs
Description: Triac; 800V; 1A; TO92; Igt: 10mA; Ifsm: 12.5A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 1A
Case: TO92
Gate current: 10mA
Max. forward impulse current: 12.5A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTA201-800E,116 BTA201-800E,116 WeEn Semiconductors bta201-800e.pdf Category: Triacs
Description: Triac; 800V; 1A; TO92; Igt: 10mA; Ifsm: 12.5A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 1A
Case: TO92
Gate current: 10mA
Max. forward impulse current: 12.5A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTA201-800E,412 BTA201-800E,412 WeEn Semiconductors bta201-800e.pdf Category: Triacs
Description: Triac; 800V; 1A; TO92; Igt: 10mA; Ifsm: 12.5A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 1A
Case: TO92
Gate current: 10mA
Mounting: THT
Kind of package: bulk
Technology: 3Q; Hi-Com
Max. forward impulse current: 12.5A
Features of semiconductor devices: sensitive gate
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTA201-800ER,112 BTA201-800ER,112 WeEn Semiconductors BTA201-800ER_112.pdf bta201-800er.pdf Category: Triacs
Description: Triac; 800V; 1A; TO92; Igt: 10mA; Ifsm: 12.5A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 1A
Case: TO92
Gate current: 10mA
Max. forward impulse current: 12.5A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTA201-800ER,116 BTA201-800ER,116 WeEn Semiconductors bta201-800er.pdf Category: Triacs
Description: Triac; 800V; 1A; TO92; Igt: 10mA; Ifsm: 12.5A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 1A
Case: TO92
Gate current: 10mA
Max. forward impulse current: 12.5A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMSC010H12B1P6T WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB281E1EDF93CDFE5D1E2EE0D6&compId=WMSC010H12B1P6T.pdf?ci_sign=af9303de10726d0e12bf4348eb5126fae3b5069b Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 107A; Press-in PCB; 152W
On-state resistance: 10mΩ
Topology: MOSFET half-bridge; NTC thermistor
Technology: SiC
Electrical mounting: Press-in PCB
Type of semiconductor module: MOSFET transistor
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Gate-source voltage: -4...18V
Power dissipation: 152W
Drain current: 107A
Drain-source voltage: 1.2kV
Pulsed drain current: 210A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SMCJ40CAJ WeEn Semiconductors pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDB8E6732630A480D4&compId=SMCJ%20Series.pdf?ci_sign=f3cf1e6589e612d15b96054b0475d78a31b97111 Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 44.7÷48.8V; 23.3A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 40V
Breakdown voltage: 44.7...48.8V
Max. forward impulse current: 23.3A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMCJ
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BT258S-800R,118 BT258S-800R,118 WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A5F7B5AC5294274A&compId=BT258S-800R.pdf?ci_sign=e19771a654cdc6a4da8f99f59e3450877d83051d pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36 Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 8A; 5A; Igt: 50uA; DPAK; SMD; reel,tape; 2us
Case: DPAK
Mounting: SMD
Type of thyristor: thyristor
Turn-on time: 2µs
Gate current: 50µA
Load current: 5A
Max. load current: 8A
Max. forward impulse current: 75A
Max. off-state voltage: 0.8kV
Kind of package: reel; tape
auf Bestellung 2388 Stücke:
Lieferzeit 14-21 Tag (e)
49+1.49 EUR
76+0.94 EUR
91+0.79 EUR
223+0.32 EUR
235+0.3 EUR
Mindestbestellmenge: 49
Im Einkaufswagen  Stück im Wert von  UAH
BT258S-800LT,118 BT258S-800LT,118 WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8B9839D2A0B142143&compId=bt258s-800lt.pdf?ci_sign=fd2d44a2fcd08006089f2cd197087f6795945fd4 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36 Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 8A; 5A; Igt: 50uA; DPAK; SMD; reel,tape; 2us
Type of thyristor: thyristor
Max. off-state voltage: 0.8kV
Max. load current: 8A
Load current: 5A
Gate current: 50µA
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 75A
Turn-on time: 2µs
auf Bestellung 2498 Stücke:
Lieferzeit 14-21 Tag (e)
47+1.53 EUR
72+1 EUR
85+0.85 EUR
108+0.66 EUR
500+0.51 EUR
1000+0.47 EUR
Mindestbestellmenge: 47
Im Einkaufswagen  Stück im Wert von  UAH
BT258-500R,127 BT258-500R,127 WeEn Semiconductors bt258-500r.pdf Category: SMD/THT thyristors
Description: Thyristor; 500V; Ifmax: 8A; 5A; Igt: 200uA; TO220AB; THT; tube; 2us
Case: TO220AB
Mounting: THT
Type of thyristor: thyristor
Turn-on time: 2µs
Gate current: 0.2mA
Load current: 5A
Max. load current: 8A
Max. forward impulse current: 75A
Max. off-state voltage: 500V
Kind of package: tube
auf Bestellung 989 Stücke:
Lieferzeit 14-21 Tag (e)
69+1.04 EUR
84+0.86 EUR
229+0.31 EUR
242+0.3 EUR
Mindestbestellmenge: 69
Im Einkaufswagen  Stück im Wert von  UAH
BT258X-500R,127 BT258X-500R,127 WeEn Semiconductors bt258x-500r.pdf Category: SMD/THT thyristors
Description: Thyristor; 500V; Ifmax: 8A; 5A; Igt: 50uA; TO220FP; THT; tube; 2us
Type of thyristor: thyristor
Max. off-state voltage: 500V
Max. load current: 8A
Load current: 5A
Gate current: 50µA
Case: TO220FP
Mounting: THT
Kind of package: tube
Max. forward impulse current: 75A
Turn-on time: 2µs
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BT258U-600R,127 BT258U-600R,127 WeEn Semiconductors bt258u-600r.pdf Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 8A; 5A; Igt: 50uA; IPAK; THT; tube; Ifsm: 75A
Case: IPAK
Kind of package: tube
Mounting: THT
Type of thyristor: thyristor
Turn-on time: 2µs
Gate current: 50µA
Load current: 5A
Max. load current: 8A
Max. forward impulse current: 75A
Max. off-state voltage: 0.6kV
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BT258X-600R,127 BT258X-600R,127 WeEn Semiconductors bt258x-500r.pdf Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 8A; 5A; Igt: 50uA; TO220FP; THT; tube; 2us
Type of thyristor: thyristor
Max. off-state voltage: 0.6kV
Max. load current: 8A
Load current: 5A
Gate current: 50µA
Case: TO220FP
Mounting: THT
Kind of package: tube
Max. forward impulse current: 75A
Turn-on time: 2µs
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BT258X-800R,127 BT258X-800R,127 WeEn Semiconductors bt258x-500r.pdf Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 8A; 5A; Igt: 50uA; TO220FP; THT; tube; 2us
Type of thyristor: thyristor
Max. off-state voltage: 0.8kV
Max. load current: 8A
Load current: 5A
Gate current: 50µA
Case: TO220FP
Mounting: THT
Kind of package: tube
Max. forward impulse current: 75A
Turn-on time: 2µs
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BYQ28E-200,127 BYQ28E-200,127 WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB752F1ED782E273FBF91D8259&compId=BYQ28E-200.pdf?ci_sign=d9202b2e23d49dbf26d79aa0716ca6c8b933b1f6 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36 Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 5Ax2; tube; Ifsm: 55A; SOT78,TO220AB
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 5A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 55A
Case: SOT78; TO220AB
Max. forward voltage: 0.8V
Max. load current: 10A
Heatsink thickness: 1.25...1.4mm
Reverse recovery time: 25ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BYQ28ED-200,118 BYQ28ED-200,118 WeEn Semiconductors byq28ed-200.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 5Ax2; 25ns; DPAK; Ufmax: 1.25V
Mounting: SMD
Semiconductor structure: common cathode; double
Case: DPAK
Type of diode: rectifying
Kind of package: reel; tape
Features of semiconductor devices: ultrafast switching
Reverse recovery time: 25ns
Max. forward voltage: 1.25V
Load current: 5A x2
Max. load current: 10A
Max. forward impulse current: 55A
Max. off-state voltage: 200V
auf Bestellung 2107 Stücke:
Lieferzeit 14-21 Tag (e)
100+0.72 EUR
116+0.62 EUR
178+0.4 EUR
188+0.38 EUR
1000+0.37 EUR
Mindestbestellmenge: 100
Im Einkaufswagen  Stück im Wert von  UAH
BYV29X-500,127 BYV29X-500,127 WeEn Semiconductors byv29x-500.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 500V; 9A; tube; Ifsm: 100A; SOD113,TO220FP-2
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 500V
Load current: 9A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 100A
Case: SOD113; TO220FP-2
Max. forward voltage: 1.11V
Reverse recovery time: 60ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BYQ28E-200E,127 BYQ28E-200E,127 WeEn Semiconductors byq28e-200e.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 5Ax2; tube; Ifsm: 55A; SOT78,TO220AB
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 5A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 55A
Case: SOT78; TO220AB
Max. forward voltage: 0.895V
Max. load current: 10A
Heatsink thickness: 1.25...1.4mm
Reverse recovery time: 25ns
auf Bestellung 180 Stücke:
Lieferzeit 14-21 Tag (e)
82+0.87 EUR
104+0.69 EUR
120+0.6 EUR
180+0.4 EUR
Mindestbestellmenge: 82
Im Einkaufswagen  Stück im Wert von  UAH
BYQ28E-200/H,127 BYQ28E-200/H,127 WeEn Semiconductors byq28e-200.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 5Ax2; tube; Ifsm: 50A; SOT78,TO220AB
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 5A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 50A
Case: SOT78; TO220AB
Max. forward voltage: 0.8V
Max. load current: 10A
Heatsink thickness: 1.25...1.4mm
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTA208-600D,127 BTA208-600D,127 WeEn Semiconductors bta208-600d.pdf PHGLS30337-1.pdf?t.download=true&u=5oefqw Category: Triacs
Description: Triac; 600V; 8A; TO220AB; Igt: 5mA; Ifsm: 65A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 8A
Case: TO220AB
Gate current: 5mA
Max. forward impulse current: 65A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BYC15X-600PQ BYC15X-600PQ WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB752F1ED782E284E0C9E3C259&compId=BYC15X-600P.pdf?ci_sign=fb6841fe1c3bf10f904a7715dc99648915312bbc pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36 Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 15A; tube; Ifsm: 200A; Ufmax: 1.4V; 39ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 15A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 200A
Case: SOD113; TO220FP-2
Max. forward voltage: 1.4V
Reverse recovery time: 39ns
auf Bestellung 1036 Stücke:
Lieferzeit 14-21 Tag (e)
69+1.04 EUR
84+0.86 EUR
106+0.67 EUR
113+0.64 EUR
250+0.62 EUR
Mindestbestellmenge: 69
Im Einkaufswagen  Stück im Wert von  UAH
BYC15X-600,127 BYC15X-600,127 WeEn Semiconductors byc15x-600.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 15A; tube; Ifsm: 200A; Ufmax: 1.4V; 19ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 15A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Kind of package: tube
Max. forward impulse current: 200A
Case: SOD113; TO220FP-2
Max. forward voltage: 1.4V
Reverse recovery time: 19ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BUJ103A,127 BUJ103A,127 WeEn Semiconductors Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 400V; 4A; 80W; TO220AB
Polarisation: bipolar
Case: TO220AB
Type of transistor: NPN
Kind of package: tube
Mounting: THT
Collector current: 4A
Current gain: 12...32
Power dissipation: 80W
Collector-emitter voltage: 400V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BUJ103AX,127 BUJ103AX,127 WeEn Semiconductors PHGLS23441-1.pdf?t.download=true&u=5oefqw Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 400V; 4A; 26W; TO220FP
Polarisation: bipolar
Case: TO220FP
Type of transistor: NPN
Kind of package: tube
Mounting: THT
Collector current: 4A
Current gain: 12...32
Power dissipation: 26W
Collector-emitter voltage: 400V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BUJ103AD,118 WeEn Semiconductors BUJ103AD.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 400V; 4A; 80W; DPAK
Polarisation: bipolar
Case: DPAK
Type of transistor: NPN
Kind of package: reel; tape
Mounting: SMD
Collector current: 4A
Current gain: 12...32
Power dissipation: 80W
Collector-emitter voltage: 400V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BYV29-400,127 BYV29-400,127 WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB752F1ED782E24D03E266E259&compId=BYV29-400.pdf?ci_sign=5662af63860df70897e566273e21c6543e23f157 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36 Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 9A; tube; Ifsm: 110A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 9A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 110A
Case: SOD59; TO220AC
Max. forward voltage: 0.9V
Reverse recovery time: 60ns
Heatsink thickness: 1.15...1.4mm
Features of semiconductor devices: ultrafast switching
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NXPSC126506Q NXPSC126506Q WeEn Semiconductors en Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 12A; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 12A
Semiconductor structure: single diode
Case: TO220AC
Max. forward impulse current: 72A
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
ESDALD24BCX ESDALD24BCX WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB90B41EDC8ACDD98BB2B100C8&compId=ESDALDxxBC.pdf?ci_sign=25186217f24567f8ce5688ca1a3a95f9c307be81 Category: Protection diodes - arrays
Description: Diode: TVS array; 26V; 6A; 350W; bidirectional; SOD323; Ch: 1; LD; ESD
Type of diode: TVS array
Breakdown voltage: 26V
Max. forward impulse current: 6A
Peak pulse power dissipation: 0.35kW
Semiconductor structure: bidirectional
Mounting: SMD
Case: SOD323
Max. off-state voltage: 24V
Leakage current: 1µA
Number of channels: 1
Kind of package: reel; tape
Manufacturer series: LD
Version: ESD
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BYV25FX-600,127 BYV25FX-600,127 WeEn Semiconductors byv25fx-600.pdf PHGLS22516-1.pdf?t.download=true&u=5oefqw Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 5A; tube; Ifsm: 66A; SOD113,TO220FP-2
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 5A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 66A
Case: SOD113; TO220FP-2
Max. forward voltage: 1.7V
Reverse recovery time: 35ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BYV25FD-600,118 BYV25FD-600,118 WeEn Semiconductors byv25fd-600.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 5A; 35ns; DPAK; Ufmax: 1.7V; Ifsm: 66A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 5A
Semiconductor structure: single diode
Case: DPAK
Kind of package: reel; tape
Max. forward voltage: 1.7V
Max. forward impulse current: 66A
Reverse recovery time: 35ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BYV25D-600,118 BYV25D-600,118 WeEn Semiconductors byv25d-600.pdf BYV25D-600.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 5A; 50ns; DPAK; Ufmax: 1.11V; Ifsm: 66A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 5A
Semiconductor structure: single diode
Case: DPAK
Kind of package: reel; tape
Max. forward voltage: 1.11V
Max. forward impulse current: 66A
Reverse recovery time: 50ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTA425X-800BT/L02Q WeEn Semiconductors bta425x-800bt.pdf Category: Triacs
Description: Triac; 800V; 25A; TO220FP; Igt: 50mA; Ifsm: 275A; 3Q,Hi-Com
Case: TO220FP
Mounting: THT
Kind of package: tube
Gate current: 50mA
Features of semiconductor devices: high temperature
Type of thyristor: triac
Technology: 3Q; Hi-Com
Max. load current: 25A
Max. forward impulse current: 275A
Max. off-state voltage: 0.8kV
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTA425X-800BQ BTA425X-800BQ WeEn Semiconductors bta425x-800b.pdf Category: Triacs
Description: Triac; 800V; 25A; TO220FP; Igt: 50mA; Ifsm: 250A; 3Q,Hi-Com
Case: TO220FP
Mounting: THT
Kind of package: tube
Gate current: 50mA
Features of semiconductor devices: sensitive gate
Type of thyristor: triac
Technology: 3Q; Hi-Com
Max. load current: 25A
Max. forward impulse current: 250A
Max. off-state voltage: 0.8kV
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTA425Y-800BTQ BTA425Y-800BTQ WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36 Category: Triacs
Description: Triac; 800V; 25A; TO220AB; Igt: 50mA; Ifsm: 250A; 3Q,Hi-Com
Case: TO220AB
Mounting: THT
Kind of package: tube
Gate current: 50mA
Features of semiconductor devices: high temperature; sensitive gate
Type of thyristor: triac
Technology: 3Q; Hi-Com
Max. load current: 25A
Max. forward impulse current: 250A
Max. off-state voltage: 0.8kV
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTA425Y-800CTQ BTA425Y-800CTQ WeEn Semiconductors bta425y-800ct.pdf Category: Triacs
Description: Triac; 800V; 25A; TO220AB; Igt: 35mA; Ifsm: 250A; 3Q,Hi-Com
Case: TO220AB
Mounting: THT
Kind of package: tube
Gate current: 35mA
Features of semiconductor devices: high temperature; sensitive gate
Type of thyristor: triac
Technology: 3Q; Hi-Com
Max. load current: 25A
Max. forward impulse current: 250A
Max. off-state voltage: 0.8kV
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WNSC2M30120R6Q WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB281E1EDF93E3D6BD154DE0D6&compId=WNSC2M30120R6Q.pdf?ci_sign=5259bee2a318e1727c3d051d366c1673db4f9ed7 Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 75.2A; Idm: 200A; 652W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 75.2A
Pulsed drain current: 200A
Power dissipation: 652W
Case: TO247-4
Gate-source voltage: -4...18V
On-state resistance: 48mΩ
Mounting: THT
Gate charge: 151nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTA45-800BQ WeEn Semiconductors bta45-800b.pdf Category: Triacs
Description: Triac; 800V; 45A; SOT1292,TO3P; Igt: 50mA; Ifsm: 495A; 4Q
Features of semiconductor devices: high temperature
Mounting: THT
Case: SOT1292; TO3P
Type of thyristor: triac
Kind of package: tube
Gate current: 50mA
Max. load current: 45A
Max. forward impulse current: 495A
Max. off-state voltage: 0.8kV
Technology: 4Q
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WNSC6D16650B6J WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB281E1EDF93E622A17B1640D6&compId=WNSC6D16650B6J.pdf?ci_sign=cc40ad2ab6a084f125cb3216bf70f5d30875fc22 Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SiC; SMD; 650V; 16A; reel,tape
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky rectifying
Technology: SiC
Load current: 16A
Max. load current: 32A
Max. forward impulse current: 110A
Max. off-state voltage: 650V
Semiconductor structure: single diode
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WNSC6D16650CW6Q WeEn Semiconductors pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDB8D13A01158B00D4&compId=WNSC6D16650CW6Q.pdf?ci_sign=0fc6f322840a4de8ec592b7a74dbd52f83a649cb Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 16A; TO247-3; tube
Case: TO247-3
Mounting: THT
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Max. forward voltage: 1.65V
Load current: 16A
Max. load current: 32A
Max. forward impulse current: 110A
Max. off-state voltage: 650V
Semiconductor structure: single diode
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTA420X-800CT/L02Q bta420x-800ct.pdf
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 20A; TO220FP; Igt: 35mA; Ifsm: 200A; 3Q,Hi-Com
Mounting: THT
Features of semiconductor devices: high temperature; sensitive gate
Kind of package: tube
Case: TO220FP
Type of thyristor: triac
Gate current: 35mA
Max. load current: 20A
Max. forward impulse current: 200A
Max. off-state voltage: 0.8kV
Technology: 3Q; Hi-Com
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NXPSC04650Q pVersion=0046&contRep=ZT&docId=005056AB752F1ED782E2961E4B34E259&compId=NXPSC04650.pdf?ci_sign=e9c051ee7b322030c5a68ad03dcf007e06e5002b pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36
NXPSC04650Q
Hersteller: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220AC; Ufmax: 1.5V
Semiconductor structure: single diode
Case: TO220AC
Mounting: THT
Type of diode: Schottky rectifying
Load current: 4A
Max. forward voltage: 1.5V
Max. load current: 8A
Max. forward impulse current: 24A
Technology: SiC
Max. off-state voltage: 650V
Kind of package: tube
auf Bestellung 25 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
25+2.86 EUR
Mindestbestellmenge: 25
Im Einkaufswagen  Stück im Wert von  UAH
BT151X-650LTNQ pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BD9688018A2BC0C4&compId=BT151X-650LTN.pdf?ci_sign=1ed6a1a58ca20f7b73dcb93edd4d70539c929d76 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36
BT151X-650LTNQ
Hersteller: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 650V; Ifmax: 12A; 7.5A; Igt: 5mA; TO220FP; THT; tube; 2us
Type of thyristor: thyristor
Max. off-state voltage: 650V
Max. load current: 12A
Load current: 7.5A
Gate current: 5mA
Case: TO220FP
Mounting: THT
Kind of package: tube
Max. forward impulse current: 120A
Turn-on time: 2µs
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BT258-600R,127 bt258-600r.pdf
BT258-600R,127
Hersteller: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 8A; 5A; Igt: 50uA; TO220AB; THT; tube; 2us
Case: TO220AB
Mounting: THT
Type of thyristor: thyristor
Turn-on time: 2µs
Gate current: 50µA
Load current: 5A
Max. load current: 8A
Max. forward impulse current: 75A
Max. off-state voltage: 0.6kV
Kind of package: tube
auf Bestellung 867 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
70+1.03 EUR
106+0.68 EUR
206+0.35 EUR
218+0.33 EUR
Mindestbestellmenge: 70
Im Einkaufswagen  Stück im Wert von  UAH
BT138B-600F,118 bt138b-600f.pdf
BT138B-600F,118
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 12A; D2PAK; Igt: 25/70mA; Ifsm: 95A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: D2PAK
Gate current: 25/70mA
Max. forward impulse current: 95A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BT138B-600G,118 bt138b-600g.pdf
BT138B-600G,118
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 12A; D2PAK; Igt: 50/100mA; Ifsm: 95A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: D2PAK
Gate current: 50/100mA
Max. forward impulse current: 95A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMSC008H12B1P6T pVersion=0046&contRep=ZT&docId=005056AB281E1EDF93CE064EDAC100D6&compId=WMSC008H12B1P6T.pdf?ci_sign=e232c0757dee7bd2d1c2df53cb2b58987cd56b96
Hersteller: WeEn Semiconductors
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 153A; Press-in PCB; 244W
Topology: MOSFET half-bridge; NTC thermistor
Technology: SiC
Type of semiconductor module: MOSFET transistor
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Gate-source voltage: -4...18V
On-state resistance: 8mΩ
Power dissipation: 244W
Drain current: 153A
Drain-source voltage: 1.2kV
Pulsed drain current: 300A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTA216X-600E,127 bta216x-600e.pdf
BTA216X-600E,127
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 16A; TO220FP; Igt: 10mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: TO220FP
Gate current: 10mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTA216B-600B,118 bta216b-800b.pdf
BTA216B-600B,118
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 16A; D2PAK; Igt: 50mA; Ifsm: 140A; 3Q,Hi-Com
Mounting: SMD
Max. forward impulse current: 140A
Max. off-state voltage: 0.6kV
Technology: 3Q; Hi-Com
Case: D2PAK
Features of semiconductor devices: sensitive gate
Kind of package: reel; tape
Type of thyristor: triac
Gate current: 50mA
Max. load current: 16A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTA201-600B,112 bta201-600b.pdf BTA201-600B%2C112.pdf
BTA201-600B,112
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 1A; TO92; Igt: 50mA; Ifsm: 12.5A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 1A
Case: TO92
Gate current: 50mA
Max. forward impulse current: 12.5A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTA201-600E,112 bta201-600b.pdf
BTA201-600E,112
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 1A; TO92; Igt: 10mA; Ifsm: 12.5A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 1A
Case: TO92
Gate current: 10mA
Max. forward impulse current: 12.5A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTA201-600E,126 bta201-600b.pdf
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 1A; TO92; Igt: 10mA; Ifsm: 12.5A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 1A
Case: TO92
Gate current: 10mA
Max. forward impulse current: 12.5A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTA201-600E/L01EP bta201-600e.pdf
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 1A; TO92; Igt: 10mA; Ifsm: 12.5A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 1A
Case: TO92
Gate current: 10mA
Max. forward impulse current: 12.5A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BYV44-500,127 pVersion=0046&contRep=ZT&docId=005056AB752F1EE890C1AA1C3B2553D3&compId=BYV44_SERIES.pdf?ci_sign=a7c531bba633e2dae5929f3ce3e4f1e9cc40c321 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36
BYV44-500,127
Hersteller: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 500V; 15Ax2; tube; Ifsm: 150A; SOT78,TO220AB
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 500V
Load current: 15A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 150A
Case: SOT78; TO220AB
Max. forward voltage: 1.15V
Max. load current: 30A
Heatsink thickness: max. 1.3mm
Reverse recovery time: 60ns
auf Bestellung 884 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
44+1.64 EUR
48+1.52 EUR
57+1.26 EUR
80+0.9 EUR
84+0.86 EUR
Mindestbestellmenge: 44
Im Einkaufswagen  Stück im Wert von  UAH
MCR100W-10MF pVersion=0046&contRep=ZT&docId=005056AB281E1EDF9ECD69F882E200D6&compId=MCR100W-10M.pdf?ci_sign=9653c51bcd73ebf8af0e1cf7ae4fcdc6800da1e6
Hersteller: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 1kV; Ifmax: 1.25A; 0.8A; Igt: 90uA; SOT223; SMD; reel,tape
Type of thyristor: thyristor
Max. off-state voltage: 1kV
Max. load current: 1.25A
Load current: 0.8A
Gate current: 90µA
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 23A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTA425Z-800CTQ pVersion=0046&contRep=ZT&docId=005056AB90B41EDC85C3F27125BEE0C7&compId=BTA425Z-800CT.pdf?ci_sign=1a20e9965f1867914335ae424f74c46cabdfb99e
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 25A; SOT1292,TO3P; Igt: 35mA; Ifsm: 250A; 3Q,Hi-Com
Case: SOT1292; TO3P
Mounting: THT
Kind of package: tube
Gate current: 35mA
Features of semiconductor devices: high temperature; sensitive gate
Type of thyristor: triac
Technology: 3Q; Hi-Com
Max. load current: 25A
Max. forward impulse current: 250A
Max. off-state voltage: 0.8kV
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BT168E,112 bt168e.pdf
BT168E,112
Hersteller: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 500V; Ifmax: 0.8A; 0.5A; Igt: 50uA; TO92; THT; bulk; 2us
Mounting: THT
Case: TO92
Kind of package: bulk
Type of thyristor: thyristor
Turn-on time: 2µs
Gate current: 50µA
Load current: 0.5A
Max. load current: 0.8A
Max. forward impulse current: 8A
Max. off-state voltage: 500V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WNS30H100CBJ pVersion=0046&contRep=ZT&docId=005056AB90B41EDB9B88F4CE537300C7&compId=WNS30H100CB.pdf?ci_sign=fff43d3e7cd0a0f80aba86033199a9360fbcee18
WNS30H100CBJ
Hersteller: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 100V; 15Ax2; reel,tape
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 100V
Load current: 15A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.67V
Max. load current: 30A
Max. forward impulse current: 330A
Kind of package: reel; tape
auf Bestellung 280 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
39+1.86 EUR
61+1.18 EUR
111+0.65 EUR
117+0.61 EUR
Mindestbestellmenge: 39
Im Einkaufswagen  Stück im Wert von  UAH
BTA201-800ER,126 bta201-800er.pdf
BTA201-800ER,126
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 1A; TO92; Igt: 10mA; Ifsm: 12.5A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 1A
Case: TO92
Gate current: 10mA
Max. forward impulse current: 12.5A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: Ammo Pack
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTA201-800B,112 bta201-800e.pdf
BTA201-800B,112
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 1A; TO92; Igt: 50mA; Ifsm: 12.5A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 1A
Case: TO92
Gate current: 50mA
Max. forward impulse current: 12.5A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTA201-800ER,412 bta201-800er.pdf
BTA201-800ER,412
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 1A; TO92; Igt: 10mA; Ifsm: 12.5A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 1A
Case: TO92
Gate current: 10mA
Mounting: THT
Kind of package: bulk
Technology: 3Q; Hi-Com
Max. forward impulse current: 12.5A
Features of semiconductor devices: sensitive gate
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTA201-800E,112 bta201-800e.pdf
BTA201-800E,112
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 1A; TO92; Igt: 10mA; Ifsm: 12.5A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 1A
Case: TO92
Gate current: 10mA
Max. forward impulse current: 12.5A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTA201-800E,116 bta201-800e.pdf
BTA201-800E,116
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 1A; TO92; Igt: 10mA; Ifsm: 12.5A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 1A
Case: TO92
Gate current: 10mA
Max. forward impulse current: 12.5A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTA201-800E,412 bta201-800e.pdf
BTA201-800E,412
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 1A; TO92; Igt: 10mA; Ifsm: 12.5A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 1A
Case: TO92
Gate current: 10mA
Mounting: THT
Kind of package: bulk
Technology: 3Q; Hi-Com
Max. forward impulse current: 12.5A
Features of semiconductor devices: sensitive gate
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTA201-800ER,112 BTA201-800ER_112.pdf bta201-800er.pdf
BTA201-800ER,112
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 1A; TO92; Igt: 10mA; Ifsm: 12.5A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 1A
Case: TO92
Gate current: 10mA
Max. forward impulse current: 12.5A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTA201-800ER,116 bta201-800er.pdf
BTA201-800ER,116
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 1A; TO92; Igt: 10mA; Ifsm: 12.5A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 1A
Case: TO92
Gate current: 10mA
Max. forward impulse current: 12.5A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMSC010H12B1P6T pVersion=0046&contRep=ZT&docId=005056AB281E1EDF93CDFE5D1E2EE0D6&compId=WMSC010H12B1P6T.pdf?ci_sign=af9303de10726d0e12bf4348eb5126fae3b5069b
Hersteller: WeEn Semiconductors
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 107A; Press-in PCB; 152W
On-state resistance: 10mΩ
Topology: MOSFET half-bridge; NTC thermistor
Technology: SiC
Electrical mounting: Press-in PCB
Type of semiconductor module: MOSFET transistor
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Gate-source voltage: -4...18V
Power dissipation: 152W
Drain current: 107A
Drain-source voltage: 1.2kV
Pulsed drain current: 210A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SMCJ40CAJ pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDB8E6732630A480D4&compId=SMCJ%20Series.pdf?ci_sign=f3cf1e6589e612d15b96054b0475d78a31b97111
Hersteller: WeEn Semiconductors
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 44.7÷48.8V; 23.3A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 40V
Breakdown voltage: 44.7...48.8V
Max. forward impulse current: 23.3A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMCJ
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BT258S-800R,118 pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A5F7B5AC5294274A&compId=BT258S-800R.pdf?ci_sign=e19771a654cdc6a4da8f99f59e3450877d83051d pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36
BT258S-800R,118
Hersteller: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 8A; 5A; Igt: 50uA; DPAK; SMD; reel,tape; 2us
Case: DPAK
Mounting: SMD
Type of thyristor: thyristor
Turn-on time: 2µs
Gate current: 50µA
Load current: 5A
Max. load current: 8A
Max. forward impulse current: 75A
Max. off-state voltage: 0.8kV
Kind of package: reel; tape
auf Bestellung 2388 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
49+1.49 EUR
76+0.94 EUR
91+0.79 EUR
223+0.32 EUR
235+0.3 EUR
Mindestbestellmenge: 49
Im Einkaufswagen  Stück im Wert von  UAH
BT258S-800LT,118 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8B9839D2A0B142143&compId=bt258s-800lt.pdf?ci_sign=fd2d44a2fcd08006089f2cd197087f6795945fd4 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36
BT258S-800LT,118
Hersteller: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 8A; 5A; Igt: 50uA; DPAK; SMD; reel,tape; 2us
Type of thyristor: thyristor
Max. off-state voltage: 0.8kV
Max. load current: 8A
Load current: 5A
Gate current: 50µA
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 75A
Turn-on time: 2µs
auf Bestellung 2498 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
47+1.53 EUR
72+1 EUR
85+0.85 EUR
108+0.66 EUR
500+0.51 EUR
1000+0.47 EUR
Mindestbestellmenge: 47
Im Einkaufswagen  Stück im Wert von  UAH
BT258-500R,127 bt258-500r.pdf
BT258-500R,127
Hersteller: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 500V; Ifmax: 8A; 5A; Igt: 200uA; TO220AB; THT; tube; 2us
Case: TO220AB
Mounting: THT
Type of thyristor: thyristor
Turn-on time: 2µs
Gate current: 0.2mA
Load current: 5A
Max. load current: 8A
Max. forward impulse current: 75A
Max. off-state voltage: 500V
Kind of package: tube
auf Bestellung 989 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
69+1.04 EUR
84+0.86 EUR
229+0.31 EUR
242+0.3 EUR
Mindestbestellmenge: 69
Im Einkaufswagen  Stück im Wert von  UAH
BT258X-500R,127 bt258x-500r.pdf
BT258X-500R,127
Hersteller: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 500V; Ifmax: 8A; 5A; Igt: 50uA; TO220FP; THT; tube; 2us
Type of thyristor: thyristor
Max. off-state voltage: 500V
Max. load current: 8A
Load current: 5A
Gate current: 50µA
Case: TO220FP
Mounting: THT
Kind of package: tube
Max. forward impulse current: 75A
Turn-on time: 2µs
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BT258U-600R,127 bt258u-600r.pdf
BT258U-600R,127
Hersteller: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 8A; 5A; Igt: 50uA; IPAK; THT; tube; Ifsm: 75A
Case: IPAK
Kind of package: tube
Mounting: THT
Type of thyristor: thyristor
Turn-on time: 2µs
Gate current: 50µA
Load current: 5A
Max. load current: 8A
Max. forward impulse current: 75A
Max. off-state voltage: 0.6kV
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BT258X-600R,127 bt258x-500r.pdf
BT258X-600R,127
Hersteller: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 8A; 5A; Igt: 50uA; TO220FP; THT; tube; 2us
Type of thyristor: thyristor
Max. off-state voltage: 0.6kV
Max. load current: 8A
Load current: 5A
Gate current: 50µA
Case: TO220FP
Mounting: THT
Kind of package: tube
Max. forward impulse current: 75A
Turn-on time: 2µs
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BT258X-800R,127 bt258x-500r.pdf
BT258X-800R,127
Hersteller: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 8A; 5A; Igt: 50uA; TO220FP; THT; tube; 2us
Type of thyristor: thyristor
Max. off-state voltage: 0.8kV
Max. load current: 8A
Load current: 5A
Gate current: 50µA
Case: TO220FP
Mounting: THT
Kind of package: tube
Max. forward impulse current: 75A
Turn-on time: 2µs
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BYQ28E-200,127 pVersion=0046&contRep=ZT&docId=005056AB752F1ED782E273FBF91D8259&compId=BYQ28E-200.pdf?ci_sign=d9202b2e23d49dbf26d79aa0716ca6c8b933b1f6 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36
BYQ28E-200,127
Hersteller: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 5Ax2; tube; Ifsm: 55A; SOT78,TO220AB
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 5A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 55A
Case: SOT78; TO220AB
Max. forward voltage: 0.8V
Max. load current: 10A
Heatsink thickness: 1.25...1.4mm
Reverse recovery time: 25ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BYQ28ED-200,118 byq28ed-200.pdf
BYQ28ED-200,118
Hersteller: WeEn Semiconductors
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 5Ax2; 25ns; DPAK; Ufmax: 1.25V
Mounting: SMD
Semiconductor structure: common cathode; double
Case: DPAK
Type of diode: rectifying
Kind of package: reel; tape
Features of semiconductor devices: ultrafast switching
Reverse recovery time: 25ns
Max. forward voltage: 1.25V
Load current: 5A x2
Max. load current: 10A
Max. forward impulse current: 55A
Max. off-state voltage: 200V
auf Bestellung 2107 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
100+0.72 EUR
116+0.62 EUR
178+0.4 EUR
188+0.38 EUR
1000+0.37 EUR
Mindestbestellmenge: 100
Im Einkaufswagen  Stück im Wert von  UAH
BYV29X-500,127 byv29x-500.pdf
BYV29X-500,127
Hersteller: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 500V; 9A; tube; Ifsm: 100A; SOD113,TO220FP-2
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 500V
Load current: 9A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 100A
Case: SOD113; TO220FP-2
Max. forward voltage: 1.11V
Reverse recovery time: 60ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BYQ28E-200E,127 byq28e-200e.pdf
BYQ28E-200E,127
Hersteller: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 5Ax2; tube; Ifsm: 55A; SOT78,TO220AB
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 5A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 55A
Case: SOT78; TO220AB
Max. forward voltage: 0.895V
Max. load current: 10A
Heatsink thickness: 1.25...1.4mm
Reverse recovery time: 25ns
auf Bestellung 180 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
82+0.87 EUR
104+0.69 EUR
120+0.6 EUR
180+0.4 EUR
Mindestbestellmenge: 82
Im Einkaufswagen  Stück im Wert von  UAH
BYQ28E-200/H,127 byq28e-200.pdf
BYQ28E-200/H,127
Hersteller: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 5Ax2; tube; Ifsm: 50A; SOT78,TO220AB
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 5A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 50A
Case: SOT78; TO220AB
Max. forward voltage: 0.8V
Max. load current: 10A
Heatsink thickness: 1.25...1.4mm
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTA208-600D,127 bta208-600d.pdf PHGLS30337-1.pdf?t.download=true&u=5oefqw
BTA208-600D,127
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 8A; TO220AB; Igt: 5mA; Ifsm: 65A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 8A
Case: TO220AB
Gate current: 5mA
Max. forward impulse current: 65A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BYC15X-600PQ pVersion=0046&contRep=ZT&docId=005056AB752F1ED782E284E0C9E3C259&compId=BYC15X-600P.pdf?ci_sign=fb6841fe1c3bf10f904a7715dc99648915312bbc pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36
BYC15X-600PQ
Hersteller: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 15A; tube; Ifsm: 200A; Ufmax: 1.4V; 39ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 15A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 200A
Case: SOD113; TO220FP-2
Max. forward voltage: 1.4V
Reverse recovery time: 39ns
auf Bestellung 1036 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
69+1.04 EUR
84+0.86 EUR
106+0.67 EUR
113+0.64 EUR
250+0.62 EUR
Mindestbestellmenge: 69
Im Einkaufswagen  Stück im Wert von  UAH
BYC15X-600,127 byc15x-600.pdf
BYC15X-600,127
Hersteller: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 15A; tube; Ifsm: 200A; Ufmax: 1.4V; 19ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 15A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Kind of package: tube
Max. forward impulse current: 200A
Case: SOD113; TO220FP-2
Max. forward voltage: 1.4V
Reverse recovery time: 19ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BUJ103A,127
BUJ103A,127
Hersteller: WeEn Semiconductors
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 400V; 4A; 80W; TO220AB
Polarisation: bipolar
Case: TO220AB
Type of transistor: NPN
Kind of package: tube
Mounting: THT
Collector current: 4A
Current gain: 12...32
Power dissipation: 80W
Collector-emitter voltage: 400V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BUJ103AX,127 PHGLS23441-1.pdf?t.download=true&u=5oefqw
BUJ103AX,127
Hersteller: WeEn Semiconductors
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 400V; 4A; 26W; TO220FP
Polarisation: bipolar
Case: TO220FP
Type of transistor: NPN
Kind of package: tube
Mounting: THT
Collector current: 4A
Current gain: 12...32
Power dissipation: 26W
Collector-emitter voltage: 400V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BUJ103AD,118 BUJ103AD.pdf
Hersteller: WeEn Semiconductors
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 400V; 4A; 80W; DPAK
Polarisation: bipolar
Case: DPAK
Type of transistor: NPN
Kind of package: reel; tape
Mounting: SMD
Collector current: 4A
Current gain: 12...32
Power dissipation: 80W
Collector-emitter voltage: 400V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BYV29-400,127 pVersion=0046&contRep=ZT&docId=005056AB752F1ED782E24D03E266E259&compId=BYV29-400.pdf?ci_sign=5662af63860df70897e566273e21c6543e23f157 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36
BYV29-400,127
Hersteller: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 9A; tube; Ifsm: 110A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 9A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 110A
Case: SOD59; TO220AC
Max. forward voltage: 0.9V
Reverse recovery time: 60ns
Heatsink thickness: 1.15...1.4mm
Features of semiconductor devices: ultrafast switching
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NXPSC126506Q en
NXPSC126506Q
Hersteller: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 12A; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 12A
Semiconductor structure: single diode
Case: TO220AC
Max. forward impulse current: 72A
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
ESDALD24BCX pVersion=0046&contRep=ZT&docId=005056AB90B41EDC8ACDD98BB2B100C8&compId=ESDALDxxBC.pdf?ci_sign=25186217f24567f8ce5688ca1a3a95f9c307be81
ESDALD24BCX
Hersteller: WeEn Semiconductors
Category: Protection diodes - arrays
Description: Diode: TVS array; 26V; 6A; 350W; bidirectional; SOD323; Ch: 1; LD; ESD
Type of diode: TVS array
Breakdown voltage: 26V
Max. forward impulse current: 6A
Peak pulse power dissipation: 0.35kW
Semiconductor structure: bidirectional
Mounting: SMD
Case: SOD323
Max. off-state voltage: 24V
Leakage current: 1µA
Number of channels: 1
Kind of package: reel; tape
Manufacturer series: LD
Version: ESD
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BYV25FX-600,127 byv25fx-600.pdf PHGLS22516-1.pdf?t.download=true&u=5oefqw
BYV25FX-600,127
Hersteller: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 5A; tube; Ifsm: 66A; SOD113,TO220FP-2
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 5A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 66A
Case: SOD113; TO220FP-2
Max. forward voltage: 1.7V
Reverse recovery time: 35ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BYV25FD-600,118 byv25fd-600.pdf
BYV25FD-600,118
Hersteller: WeEn Semiconductors
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 5A; 35ns; DPAK; Ufmax: 1.7V; Ifsm: 66A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 5A
Semiconductor structure: single diode
Case: DPAK
Kind of package: reel; tape
Max. forward voltage: 1.7V
Max. forward impulse current: 66A
Reverse recovery time: 35ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BYV25D-600,118 byv25d-600.pdf BYV25D-600.pdf
BYV25D-600,118
Hersteller: WeEn Semiconductors
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 5A; 50ns; DPAK; Ufmax: 1.11V; Ifsm: 66A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 5A
Semiconductor structure: single diode
Case: DPAK
Kind of package: reel; tape
Max. forward voltage: 1.11V
Max. forward impulse current: 66A
Reverse recovery time: 50ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTA425X-800BT/L02Q bta425x-800bt.pdf
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 25A; TO220FP; Igt: 50mA; Ifsm: 275A; 3Q,Hi-Com
Case: TO220FP
Mounting: THT
Kind of package: tube
Gate current: 50mA
Features of semiconductor devices: high temperature
Type of thyristor: triac
Technology: 3Q; Hi-Com
Max. load current: 25A
Max. forward impulse current: 275A
Max. off-state voltage: 0.8kV
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTA425X-800BQ bta425x-800b.pdf
BTA425X-800BQ
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 25A; TO220FP; Igt: 50mA; Ifsm: 250A; 3Q,Hi-Com
Case: TO220FP
Mounting: THT
Kind of package: tube
Gate current: 50mA
Features of semiconductor devices: sensitive gate
Type of thyristor: triac
Technology: 3Q; Hi-Com
Max. load current: 25A
Max. forward impulse current: 250A
Max. off-state voltage: 0.8kV
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTA425Y-800BTQ pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36
BTA425Y-800BTQ
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 25A; TO220AB; Igt: 50mA; Ifsm: 250A; 3Q,Hi-Com
Case: TO220AB
Mounting: THT
Kind of package: tube
Gate current: 50mA
Features of semiconductor devices: high temperature; sensitive gate
Type of thyristor: triac
Technology: 3Q; Hi-Com
Max. load current: 25A
Max. forward impulse current: 250A
Max. off-state voltage: 0.8kV
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTA425Y-800CTQ bta425y-800ct.pdf
BTA425Y-800CTQ
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 25A; TO220AB; Igt: 35mA; Ifsm: 250A; 3Q,Hi-Com
Case: TO220AB
Mounting: THT
Kind of package: tube
Gate current: 35mA
Features of semiconductor devices: high temperature; sensitive gate
Type of thyristor: triac
Technology: 3Q; Hi-Com
Max. load current: 25A
Max. forward impulse current: 250A
Max. off-state voltage: 0.8kV
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WNSC2M30120R6Q pVersion=0046&contRep=ZT&docId=005056AB281E1EDF93E3D6BD154DE0D6&compId=WNSC2M30120R6Q.pdf?ci_sign=5259bee2a318e1727c3d051d366c1673db4f9ed7
Hersteller: WeEn Semiconductors
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 75.2A; Idm: 200A; 652W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 75.2A
Pulsed drain current: 200A
Power dissipation: 652W
Case: TO247-4
Gate-source voltage: -4...18V
On-state resistance: 48mΩ
Mounting: THT
Gate charge: 151nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTA45-800BQ bta45-800b.pdf
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 45A; SOT1292,TO3P; Igt: 50mA; Ifsm: 495A; 4Q
Features of semiconductor devices: high temperature
Mounting: THT
Case: SOT1292; TO3P
Type of thyristor: triac
Kind of package: tube
Gate current: 50mA
Max. load current: 45A
Max. forward impulse current: 495A
Max. off-state voltage: 0.8kV
Technology: 4Q
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WNSC6D16650B6J pVersion=0046&contRep=ZT&docId=005056AB281E1EDF93E622A17B1640D6&compId=WNSC6D16650B6J.pdf?ci_sign=cc40ad2ab6a084f125cb3216bf70f5d30875fc22
Hersteller: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SiC; SMD; 650V; 16A; reel,tape
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky rectifying
Technology: SiC
Load current: 16A
Max. load current: 32A
Max. forward impulse current: 110A
Max. off-state voltage: 650V
Semiconductor structure: single diode
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WNSC6D16650CW6Q pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDB8D13A01158B00D4&compId=WNSC6D16650CW6Q.pdf?ci_sign=0fc6f322840a4de8ec592b7a74dbd52f83a649cb
Hersteller: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 16A; TO247-3; tube
Case: TO247-3
Mounting: THT
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Max. forward voltage: 1.65V
Load current: 16A
Max. load current: 32A
Max. forward impulse current: 110A
Max. off-state voltage: 650V
Semiconductor structure: single diode
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
Wählen Sie Seite:   [  << Vorherige Seite ]  1 10 20 30 40 50 60 70 80 90 92 93 94 95 96 97 98 99 100  [ Nächste Seite >> ]