Produkte > WEEN SEMICONDUCTORS > Alle Produkte des Herstellers WEEN SEMICONDUCTORS (5786) > Seite 97 nach 97
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||
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| 5.0SMDJ43CAJ | WeEn Semiconductors |
 Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 5kW; 47.8÷52.8V; 72.1A; bidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 5kW Max. off-state voltage: 43V Breakdown voltage: 47.8...52.8V Max. forward impulse current: 72.1A Semiconductor structure: bidirectional Case: SMC Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: 5.0SMDJ |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||
| ESDHD03UFX | WeEn Semiconductors |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; ESD; 4÷8V; 24A; unidirectional; DFN1006-2; reel,tape Mounting: SMD Kind of package: reel; tape Type of diode: TVS Semiconductor structure: unidirectional Leakage current: 1µA Number of channels: 1 Max. off-state voltage: 3.3V Breakdown voltage: 4...8V Max. forward impulse current: 24A Manufacturer series: HD Case: DFN1006-2 Version: ESD |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||
| ESDHD05UFX | WeEn Semiconductors |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; ESD; 320W; 6÷9.5V; 20A; unidirectional; DFN1006-2; Ch: 1 Mounting: SMD Kind of package: reel; tape Type of diode: TVS Semiconductor structure: unidirectional Leakage current: 0.1µA Number of channels: 1 Max. off-state voltage: 5V Breakdown voltage: 6...9.5V Max. forward impulse current: 20A Manufacturer series: HD Peak pulse power dissipation: 320W Case: DFN1006-2 Version: ESD |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||
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ESDALD05BCX | WeEn Semiconductors |
Category: Protection diodes - arrays Description: Diode: TVS array; 6.5V; 15A; 350W; bidirectional; ESD; SOD323; Ch: 1 Peak pulse power dissipation: 0.35kW Case: SOD323 Version: ESD Manufacturer series: LD Kind of package: reel; tape Mounting: SMD Type of diode: TVS array Leakage current: 1µA Number of channels: 1 Max. forward impulse current: 15A Max. off-state voltage: 5V Breakdown voltage: 6.5V Semiconductor structure: bidirectional |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 90000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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ESDALD05UD4X | WeEn Semiconductors |
Category: Protection diodes - arrays Description: Diode: TVS array; 6V; 5.5A; 88W; unidirectional; ESD; SOT23-6; Ch: 4 Application: USB Peak pulse power dissipation: 88W Case: SOT23-6 Version: ESD Manufacturer series: LD Kind of package: reel; tape Mounting: SMD Type of diode: TVS array Leakage current: 0.1µA Number of channels: 4 Max. forward impulse current: 5.5A Max. off-state voltage: 5V Breakdown voltage: 6V Semiconductor structure: unidirectional |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 90000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||
| ESDALD05UJ2X | WeEn Semiconductors |
Category: Protection diodes - arrays Description: Diode: TVS array; 6V; 8A; 136W; unidirectional; ESD; SOT143; Ch: 2; LD Application: USB Peak pulse power dissipation: 136W Case: SOT143 Version: ESD Manufacturer series: LD Kind of package: reel; tape Mounting: SMD Type of diode: TVS array Leakage current: 0.1µA Number of channels: 2 Max. forward impulse current: 8A Max. off-state voltage: 5V Breakdown voltage: 6V Semiconductor structure: unidirectional |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 90000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||
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BUJ100,412 | WeEn Semiconductors |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 400V; 1A; 2W; TO92 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 400V Collector current: 1A Power dissipation: 2W Case: TO92 Current gain: 9...20 Mounting: THT Kind of package: bulk |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||
| WNSCM80120R6Q | WeEn Semiconductors |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 32A; Idm: 81A; 270W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 32A Pulsed drain current: 81A Power dissipation: 270W Case: TO247-4 Gate-source voltage: -10...25V On-state resistance: 0.11Ω Mounting: THT Gate charge: 59nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
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BYR29-800,127 | WeEn Semiconductors |
Category: THT universal diodes Description: Diode: rectifying; THT; 800V; 8A; tube; Ifsm: 66A; SOD59,TO220AC Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.8kV Load current: 8A Semiconductor structure: single diode Kind of package: tube Max. forward impulse current: 66A Case: SOD59; TO220AC Max. forward voltage: 1.95V Reverse recovery time: 75ns |
auf Bestellung 540 Stücke: Lieferzeit 14-21 Tag (e) |
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BYC10DX-600,127 | WeEn Semiconductors |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 10A; tube; Ifsm: 65A; SOD113,TO220FP-2 Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 10A Semiconductor structure: single diode Features of semiconductor devices: superfast switching Kind of package: tube Max. forward impulse current: 65A Case: SOD113; TO220FP-2 Max. forward voltage: 1.4V Reverse recovery time: 18ns |
auf Bestellung 925 Stücke: Lieferzeit 14-21 Tag (e) |
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BYC10B-600,118 | WeEn Semiconductors |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 600V; 10A; 55ns; D2PAK,SOT404; Ufmax: 1.4V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Load current: 10A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Kind of package: reel; tape Max. forward impulse current: 71A Case: D2PAK; SOT404 Max. forward voltage: 1.4V Reverse recovery time: 55ns |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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BYC10X-600PQ | WeEn Semiconductors |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 10A; tube; Ifsm: 150A; Ufmax: 1.3V; 19ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 10A Semiconductor structure: single diode Features of semiconductor devices: superfast switching Kind of package: tube Max. forward impulse current: 150A Case: SOD113; TO220FP-2 Max. forward voltage: 1.3V Reverse recovery time: 19ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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BYC10-600PQ | WeEn Semiconductors |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 10A; tube; Ifsm: 150A; SOD59,TO220AC Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 10A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Kind of package: tube Max. forward impulse current: 150A Case: SOD59; TO220AC Max. forward voltage: 2V Reverse recovery time: 18ns Max. load current: 20A |
Produkt ist nicht verfügbar |
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BYC10-600CT,127 | WeEn Semiconductors |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 5Ax2; tube; Ifsm: 40A; SOT78,TO220AB Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 5A x2 Semiconductor structure: common cathode; double Features of semiconductor devices: superfast switching Kind of package: tube Max. forward impulse current: 40A Case: SOT78; TO220AB Max. forward voltage: 1.4V Reverse recovery time: 19ns Heatsink thickness: 1.25...1.4mm Max. load current: 10A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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BYC10D-600,127 | WeEn Semiconductors |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 10A; tube; Ifsm: 65A; SOD59,TO220AC Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 10A Semiconductor structure: single diode Features of semiconductor devices: superfast switching Kind of package: tube Max. forward impulse current: 65A Case: SOD59; TO220AC Max. forward voltage: 1.4V Reverse recovery time: 18ns |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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BYC10X-600,127 | WeEn Semiconductors |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 10A; tube; Ifsm: 91A; SOD113,TO220FP-2 Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 10A Semiconductor structure: single diode Features of semiconductor devices: superfast switching Kind of package: tube Max. forward impulse current: 91A Case: SOD113; TO220FP-2 Max. forward voltage: 1.4V Reverse recovery time: 19ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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BYC75W-1200PQ | WeEn Semiconductors |
Category: THT universal diodes Description: Diode: rectifying; THT; 1.2kV; 75A; tube; Ifsm: 660A; Ufmax: 3.3V Type of diode: rectifying Case: TO247AC Modified Mounting: THT Max. off-state voltage: 1.2kV Load current: 75A Semiconductor structure: single diode Max. forward voltage: 3.3V Max. forward impulse current: 660A Kind of package: tube Reverse recovery time: 85ns |
Produkt ist nicht verfügbar |
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BYC15-1200PQ | WeEn Semiconductors |
Category: THT universal diodes Description: Diode: rectifying; THT; 1.2kV; 15A; tube; Ifsm: 180A; SOD59,TO220AC Type of diode: rectifying Case: SOD59; TO220AC Mounting: THT Max. off-state voltage: 1.2kV Load current: 15A Semiconductor structure: single diode Max. forward voltage: 2V Max. forward impulse current: 180A Kind of package: tube Reverse recovery time: 61ns Features of semiconductor devices: superfast switching |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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BYC40W-1200PQ | WeEn Semiconductors |
Category: THT universal diodes Description: Diode: rectifying; THT; 1.2kV; 40A; tube; Ifsm: 300A; TO247-2; 91ns Type of diode: rectifying Case: TO247-2 Mounting: THT Max. off-state voltage: 1.2kV Load current: 40A Semiconductor structure: single diode Max. forward voltage: 2.2V Max. forward impulse current: 0.3kA Kind of package: tube Reverse recovery time: 91ns Features of semiconductor devices: superfast switching |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 900 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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BYC60W-1200PQ | WeEn Semiconductors |
Category: THT universal diodes Description: Diode: rectifying; THT; 1.2kV; 60A; tube; Ifsm: 550A; Ufmax: 3.3V Type of diode: rectifying Case: TO247AC Modified Mounting: THT Max. off-state voltage: 1.2kV Load current: 60A Semiconductor structure: single diode Max. forward voltage: 3.3V Max. forward impulse current: 0.55kA Kind of package: tube Reverse recovery time: 55ns |
Produkt ist nicht verfügbar |
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BYR5D-1200PJ | WeEn Semiconductors |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 1.2kV; 5A; DPAK; Ufmax: 1.55V; Ifsm: 55A Type of diode: rectifying Case: DPAK Mounting: SMD Max. off-state voltage: 1.2kV Load current: 5A Semiconductor structure: single diode Max. forward voltage: 1.55V Max. forward impulse current: 55A Kind of package: reel; tape Features of semiconductor devices: ultrafast switching |
Produkt ist nicht verfügbar |
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BTA425X-800BQ | WeEn Semiconductors |
Category: Triacs Description: Triac; 800V; 25A; TO220FP; Igt: 50mA; Ifsm: 250A; 3Q,Hi-Com Case: TO220FP Mounting: THT Kind of package: tube Gate current: 50mA Features of semiconductor devices: sensitive gate Type of thyristor: triac Technology: 3Q; Hi-Com Max. load current: 25A Max. forward impulse current: 250A Max. off-state voltage: 0.8kV |
Produkt ist nicht verfügbar |
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BTA425X-800BT/L02Q | WeEn Semiconductors |
Category: Triacs Description: Triac; 800V; 25A; TO220FP; Igt: 50mA; Ifsm: 275A; 3Q,Hi-Com Case: TO220FP Mounting: THT Kind of package: tube Gate current: 50mA Features of semiconductor devices: high temperature Type of thyristor: triac Technology: 3Q; Hi-Com Max. load current: 25A Max. forward impulse current: 275A Max. off-state voltage: 0.8kV |
Produkt ist nicht verfügbar |
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BTA425Y-800CTQ | WeEn Semiconductors |
Category: Triacs Description: Triac; 800V; 25A; TO220AB; Igt: 35mA; Ifsm: 250A; 3Q,Hi-Com Case: TO220AB Mounting: THT Kind of package: tube Gate current: 35mA Features of semiconductor devices: high temperature; sensitive gate Type of thyristor: triac Technology: 3Q; Hi-Com Max. load current: 25A Max. forward impulse current: 250A Max. off-state voltage: 0.8kV |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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BT139-800E.127 | WeEn Semiconductors |
Category: Triacs Description: Triac; 800V; 16A; TO220AB; Igt: 10/25mA; Ifsm: 155A; 4Q Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 16A Case: TO220AB Gate current: 10/25mA Max. forward impulse current: 155A Technology: 4Q Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
Produkt ist nicht verfügbar |
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| SMDJ30AJ | WeEn Semiconductors |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 3kW; 33.6÷36.59V; 62A; unidirectional; SMC; reel,tape Type of diode: TVS Semiconductor structure: unidirectional Mounting: SMD Kind of package: reel; tape Max. off-state voltage: 30V Breakdown voltage: 33.6...36.59V Max. forward impulse current: 62A Manufacturer series: SMDJ Peak pulse power dissipation: 3kW Case: SMC Leakage current: 1µA |
Produkt ist nicht verfügbar |
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| 5.0SMDJ43CAJ |
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Hersteller: WeEn Semiconductors
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 5kW; 47.8÷52.8V; 72.1A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 5kW
Max. off-state voltage: 43V
Breakdown voltage: 47.8...52.8V
Max. forward impulse current: 72.1A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: 5.0SMDJ
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 5kW; 47.8÷52.8V; 72.1A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 5kW
Max. off-state voltage: 43V
Breakdown voltage: 47.8...52.8V
Max. forward impulse current: 72.1A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: 5.0SMDJ
Produkt ist nicht verfügbar
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| ESDHD03UFX |
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Hersteller: WeEn Semiconductors
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 4÷8V; 24A; unidirectional; DFN1006-2; reel,tape
Mounting: SMD
Kind of package: reel; tape
Type of diode: TVS
Semiconductor structure: unidirectional
Leakage current: 1µA
Number of channels: 1
Max. off-state voltage: 3.3V
Breakdown voltage: 4...8V
Max. forward impulse current: 24A
Manufacturer series: HD
Case: DFN1006-2
Version: ESD
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 4÷8V; 24A; unidirectional; DFN1006-2; reel,tape
Mounting: SMD
Kind of package: reel; tape
Type of diode: TVS
Semiconductor structure: unidirectional
Leakage current: 1µA
Number of channels: 1
Max. off-state voltage: 3.3V
Breakdown voltage: 4...8V
Max. forward impulse current: 24A
Manufacturer series: HD
Case: DFN1006-2
Version: ESD
Produkt ist nicht verfügbar
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| ESDHD05UFX |
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Hersteller: WeEn Semiconductors
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 320W; 6÷9.5V; 20A; unidirectional; DFN1006-2; Ch: 1
Mounting: SMD
Kind of package: reel; tape
Type of diode: TVS
Semiconductor structure: unidirectional
Leakage current: 0.1µA
Number of channels: 1
Max. off-state voltage: 5V
Breakdown voltage: 6...9.5V
Max. forward impulse current: 20A
Manufacturer series: HD
Peak pulse power dissipation: 320W
Case: DFN1006-2
Version: ESD
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 320W; 6÷9.5V; 20A; unidirectional; DFN1006-2; Ch: 1
Mounting: SMD
Kind of package: reel; tape
Type of diode: TVS
Semiconductor structure: unidirectional
Leakage current: 0.1µA
Number of channels: 1
Max. off-state voltage: 5V
Breakdown voltage: 6...9.5V
Max. forward impulse current: 20A
Manufacturer series: HD
Peak pulse power dissipation: 320W
Case: DFN1006-2
Version: ESD
Produkt ist nicht verfügbar
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| ESDALD05BCX |
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Hersteller: WeEn Semiconductors
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.5V; 15A; 350W; bidirectional; ESD; SOD323; Ch: 1
Peak pulse power dissipation: 0.35kW
Case: SOD323
Version: ESD
Manufacturer series: LD
Kind of package: reel; tape
Mounting: SMD
Type of diode: TVS array
Leakage current: 1µA
Number of channels: 1
Max. forward impulse current: 15A
Max. off-state voltage: 5V
Breakdown voltage: 6.5V
Semiconductor structure: bidirectional
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.5V; 15A; 350W; bidirectional; ESD; SOD323; Ch: 1
Peak pulse power dissipation: 0.35kW
Case: SOD323
Version: ESD
Manufacturer series: LD
Kind of package: reel; tape
Mounting: SMD
Type of diode: TVS array
Leakage current: 1µA
Number of channels: 1
Max. forward impulse current: 15A
Max. off-state voltage: 5V
Breakdown voltage: 6.5V
Semiconductor structure: bidirectional
Produkt ist nicht verfügbar
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| ESDALD05UD4X |
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Hersteller: WeEn Semiconductors
Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; 5.5A; 88W; unidirectional; ESD; SOT23-6; Ch: 4
Application: USB
Peak pulse power dissipation: 88W
Case: SOT23-6
Version: ESD
Manufacturer series: LD
Kind of package: reel; tape
Mounting: SMD
Type of diode: TVS array
Leakage current: 0.1µA
Number of channels: 4
Max. forward impulse current: 5.5A
Max. off-state voltage: 5V
Breakdown voltage: 6V
Semiconductor structure: unidirectional
Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; 5.5A; 88W; unidirectional; ESD; SOT23-6; Ch: 4
Application: USB
Peak pulse power dissipation: 88W
Case: SOT23-6
Version: ESD
Manufacturer series: LD
Kind of package: reel; tape
Mounting: SMD
Type of diode: TVS array
Leakage current: 0.1µA
Number of channels: 4
Max. forward impulse current: 5.5A
Max. off-state voltage: 5V
Breakdown voltage: 6V
Semiconductor structure: unidirectional
Produkt ist nicht verfügbar
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| ESDALD05UJ2X |
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Hersteller: WeEn Semiconductors
Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; 8A; 136W; unidirectional; ESD; SOT143; Ch: 2; LD
Application: USB
Peak pulse power dissipation: 136W
Case: SOT143
Version: ESD
Manufacturer series: LD
Kind of package: reel; tape
Mounting: SMD
Type of diode: TVS array
Leakage current: 0.1µA
Number of channels: 2
Max. forward impulse current: 8A
Max. off-state voltage: 5V
Breakdown voltage: 6V
Semiconductor structure: unidirectional
Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; 8A; 136W; unidirectional; ESD; SOT143; Ch: 2; LD
Application: USB
Peak pulse power dissipation: 136W
Case: SOT143
Version: ESD
Manufacturer series: LD
Kind of package: reel; tape
Mounting: SMD
Type of diode: TVS array
Leakage current: 0.1µA
Number of channels: 2
Max. forward impulse current: 8A
Max. off-state voltage: 5V
Breakdown voltage: 6V
Semiconductor structure: unidirectional
Produkt ist nicht verfügbar
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| BUJ100,412 |
Hersteller: WeEn Semiconductors
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 400V; 1A; 2W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 400V
Collector current: 1A
Power dissipation: 2W
Case: TO92
Current gain: 9...20
Mounting: THT
Kind of package: bulk
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 400V; 1A; 2W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 400V
Collector current: 1A
Power dissipation: 2W
Case: TO92
Current gain: 9...20
Mounting: THT
Kind of package: bulk
Produkt ist nicht verfügbar
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| WNSCM80120R6Q |
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Hersteller: WeEn Semiconductors
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 32A; Idm: 81A; 270W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 32A
Pulsed drain current: 81A
Power dissipation: 270W
Case: TO247-4
Gate-source voltage: -10...25V
On-state resistance: 0.11Ω
Mounting: THT
Gate charge: 59nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 32A; Idm: 81A; 270W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 32A
Pulsed drain current: 81A
Power dissipation: 270W
Case: TO247-4
Gate-source voltage: -10...25V
On-state resistance: 0.11Ω
Mounting: THT
Gate charge: 59nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Produkt ist nicht verfügbar
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| BYR29-800,127 |
Hersteller: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 8A; tube; Ifsm: 66A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.8kV
Load current: 8A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 66A
Case: SOD59; TO220AC
Max. forward voltage: 1.95V
Reverse recovery time: 75ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 8A; tube; Ifsm: 66A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.8kV
Load current: 8A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 66A
Case: SOD59; TO220AC
Max. forward voltage: 1.95V
Reverse recovery time: 75ns
auf Bestellung 540 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 80+ | 1.07 EUR |
| 134+ | 0.63 EUR |
| 148+ | 0.58 EUR |
| 168+ | 0.51 EUR |
| 500+ | 0.46 EUR |
| BYC10DX-600,127 |
|
Hersteller: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10A; tube; Ifsm: 65A; SOD113,TO220FP-2
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 10A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Kind of package: tube
Max. forward impulse current: 65A
Case: SOD113; TO220FP-2
Max. forward voltage: 1.4V
Reverse recovery time: 18ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10A; tube; Ifsm: 65A; SOD113,TO220FP-2
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 10A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Kind of package: tube
Max. forward impulse current: 65A
Case: SOD113; TO220FP-2
Max. forward voltage: 1.4V
Reverse recovery time: 18ns
auf Bestellung 925 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 85+ | 1 EUR |
| 139+ | 0.61 EUR |
| 151+ | 0.57 EUR |
| 500+ | 0.56 EUR |
| BYC10B-600,118 |
|
Hersteller: WeEn Semiconductors
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 10A; 55ns; D2PAK,SOT404; Ufmax: 1.4V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 10A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: reel; tape
Max. forward impulse current: 71A
Case: D2PAK; SOT404
Max. forward voltage: 1.4V
Reverse recovery time: 55ns
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 10A; 55ns; D2PAK,SOT404; Ufmax: 1.4V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 10A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: reel; tape
Max. forward impulse current: 71A
Case: D2PAK; SOT404
Max. forward voltage: 1.4V
Reverse recovery time: 55ns
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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| BYC10X-600PQ |
|
Hersteller: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10A; tube; Ifsm: 150A; Ufmax: 1.3V; 19ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 10A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Kind of package: tube
Max. forward impulse current: 150A
Case: SOD113; TO220FP-2
Max. forward voltage: 1.3V
Reverse recovery time: 19ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10A; tube; Ifsm: 150A; Ufmax: 1.3V; 19ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 10A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Kind of package: tube
Max. forward impulse current: 150A
Case: SOD113; TO220FP-2
Max. forward voltage: 1.3V
Reverse recovery time: 19ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BYC10-600PQ |
|
Hersteller: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10A; tube; Ifsm: 150A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 10A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 150A
Case: SOD59; TO220AC
Max. forward voltage: 2V
Reverse recovery time: 18ns
Max. load current: 20A
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10A; tube; Ifsm: 150A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 10A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 150A
Case: SOD59; TO220AC
Max. forward voltage: 2V
Reverse recovery time: 18ns
Max. load current: 20A
Produkt ist nicht verfügbar
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| BYC10-600CT,127 |
|
Hersteller: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 5Ax2; tube; Ifsm: 40A; SOT78,TO220AB
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 5A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: superfast switching
Kind of package: tube
Max. forward impulse current: 40A
Case: SOT78; TO220AB
Max. forward voltage: 1.4V
Reverse recovery time: 19ns
Heatsink thickness: 1.25...1.4mm
Max. load current: 10A
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 5Ax2; tube; Ifsm: 40A; SOT78,TO220AB
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 5A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: superfast switching
Kind of package: tube
Max. forward impulse current: 40A
Case: SOT78; TO220AB
Max. forward voltage: 1.4V
Reverse recovery time: 19ns
Heatsink thickness: 1.25...1.4mm
Max. load current: 10A
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| BYC10D-600,127 |
|
Hersteller: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10A; tube; Ifsm: 65A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 10A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Kind of package: tube
Max. forward impulse current: 65A
Case: SOD59; TO220AC
Max. forward voltage: 1.4V
Reverse recovery time: 18ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10A; tube; Ifsm: 65A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 10A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Kind of package: tube
Max. forward impulse current: 65A
Case: SOD59; TO220AC
Max. forward voltage: 1.4V
Reverse recovery time: 18ns
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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Stück im Wert von UAH
| BYC10X-600,127 |
|
Hersteller: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10A; tube; Ifsm: 91A; SOD113,TO220FP-2
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 10A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Kind of package: tube
Max. forward impulse current: 91A
Case: SOD113; TO220FP-2
Max. forward voltage: 1.4V
Reverse recovery time: 19ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10A; tube; Ifsm: 91A; SOD113,TO220FP-2
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 10A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Kind of package: tube
Max. forward impulse current: 91A
Case: SOD113; TO220FP-2
Max. forward voltage: 1.4V
Reverse recovery time: 19ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BYC75W-1200PQ |
|
Hersteller: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 75A; tube; Ifsm: 660A; Ufmax: 3.3V
Type of diode: rectifying
Case: TO247AC Modified
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 75A
Semiconductor structure: single diode
Max. forward voltage: 3.3V
Max. forward impulse current: 660A
Kind of package: tube
Reverse recovery time: 85ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 75A; tube; Ifsm: 660A; Ufmax: 3.3V
Type of diode: rectifying
Case: TO247AC Modified
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 75A
Semiconductor structure: single diode
Max. forward voltage: 3.3V
Max. forward impulse current: 660A
Kind of package: tube
Reverse recovery time: 85ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BYC15-1200PQ |
|
Hersteller: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 15A; tube; Ifsm: 180A; SOD59,TO220AC
Type of diode: rectifying
Case: SOD59; TO220AC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 15A
Semiconductor structure: single diode
Max. forward voltage: 2V
Max. forward impulse current: 180A
Kind of package: tube
Reverse recovery time: 61ns
Features of semiconductor devices: superfast switching
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 15A; tube; Ifsm: 180A; SOD59,TO220AC
Type of diode: rectifying
Case: SOD59; TO220AC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 15A
Semiconductor structure: single diode
Max. forward voltage: 2V
Max. forward impulse current: 180A
Kind of package: tube
Reverse recovery time: 61ns
Features of semiconductor devices: superfast switching
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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| BYC40W-1200PQ |
|
Hersteller: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 40A; tube; Ifsm: 300A; TO247-2; 91ns
Type of diode: rectifying
Case: TO247-2
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 40A
Semiconductor structure: single diode
Max. forward voltage: 2.2V
Max. forward impulse current: 0.3kA
Kind of package: tube
Reverse recovery time: 91ns
Features of semiconductor devices: superfast switching
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 40A; tube; Ifsm: 300A; TO247-2; 91ns
Type of diode: rectifying
Case: TO247-2
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 40A
Semiconductor structure: single diode
Max. forward voltage: 2.2V
Max. forward impulse current: 0.3kA
Kind of package: tube
Reverse recovery time: 91ns
Features of semiconductor devices: superfast switching
Produkt ist nicht verfügbar
Mindestbestellmenge: 900 Stücke
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Stück im Wert von UAH
| BYC60W-1200PQ |
|
Hersteller: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 60A; tube; Ifsm: 550A; Ufmax: 3.3V
Type of diode: rectifying
Case: TO247AC Modified
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 60A
Semiconductor structure: single diode
Max. forward voltage: 3.3V
Max. forward impulse current: 0.55kA
Kind of package: tube
Reverse recovery time: 55ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 60A; tube; Ifsm: 550A; Ufmax: 3.3V
Type of diode: rectifying
Case: TO247AC Modified
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 60A
Semiconductor structure: single diode
Max. forward voltage: 3.3V
Max. forward impulse current: 0.55kA
Kind of package: tube
Reverse recovery time: 55ns
Produkt ist nicht verfügbar
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| BYR5D-1200PJ |
|
Hersteller: WeEn Semiconductors
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 5A; DPAK; Ufmax: 1.55V; Ifsm: 55A
Type of diode: rectifying
Case: DPAK
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 5A
Semiconductor structure: single diode
Max. forward voltage: 1.55V
Max. forward impulse current: 55A
Kind of package: reel; tape
Features of semiconductor devices: ultrafast switching
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 5A; DPAK; Ufmax: 1.55V; Ifsm: 55A
Type of diode: rectifying
Case: DPAK
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 5A
Semiconductor structure: single diode
Max. forward voltage: 1.55V
Max. forward impulse current: 55A
Kind of package: reel; tape
Features of semiconductor devices: ultrafast switching
Produkt ist nicht verfügbar
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| BTA425X-800BQ |
|
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 25A; TO220FP; Igt: 50mA; Ifsm: 250A; 3Q,Hi-Com
Case: TO220FP
Mounting: THT
Kind of package: tube
Gate current: 50mA
Features of semiconductor devices: sensitive gate
Type of thyristor: triac
Technology: 3Q; Hi-Com
Max. load current: 25A
Max. forward impulse current: 250A
Max. off-state voltage: 0.8kV
Category: Triacs
Description: Triac; 800V; 25A; TO220FP; Igt: 50mA; Ifsm: 250A; 3Q,Hi-Com
Case: TO220FP
Mounting: THT
Kind of package: tube
Gate current: 50mA
Features of semiconductor devices: sensitive gate
Type of thyristor: triac
Technology: 3Q; Hi-Com
Max. load current: 25A
Max. forward impulse current: 250A
Max. off-state voltage: 0.8kV
Produkt ist nicht verfügbar
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| BTA425X-800BT/L02Q |
|
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 25A; TO220FP; Igt: 50mA; Ifsm: 275A; 3Q,Hi-Com
Case: TO220FP
Mounting: THT
Kind of package: tube
Gate current: 50mA
Features of semiconductor devices: high temperature
Type of thyristor: triac
Technology: 3Q; Hi-Com
Max. load current: 25A
Max. forward impulse current: 275A
Max. off-state voltage: 0.8kV
Category: Triacs
Description: Triac; 800V; 25A; TO220FP; Igt: 50mA; Ifsm: 275A; 3Q,Hi-Com
Case: TO220FP
Mounting: THT
Kind of package: tube
Gate current: 50mA
Features of semiconductor devices: high temperature
Type of thyristor: triac
Technology: 3Q; Hi-Com
Max. load current: 25A
Max. forward impulse current: 275A
Max. off-state voltage: 0.8kV
Produkt ist nicht verfügbar
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| BTA425Y-800CTQ |
|
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 25A; TO220AB; Igt: 35mA; Ifsm: 250A; 3Q,Hi-Com
Case: TO220AB
Mounting: THT
Kind of package: tube
Gate current: 35mA
Features of semiconductor devices: high temperature; sensitive gate
Type of thyristor: triac
Technology: 3Q; Hi-Com
Max. load current: 25A
Max. forward impulse current: 250A
Max. off-state voltage: 0.8kV
Category: Triacs
Description: Triac; 800V; 25A; TO220AB; Igt: 35mA; Ifsm: 250A; 3Q,Hi-Com
Case: TO220AB
Mounting: THT
Kind of package: tube
Gate current: 35mA
Features of semiconductor devices: high temperature; sensitive gate
Type of thyristor: triac
Technology: 3Q; Hi-Com
Max. load current: 25A
Max. forward impulse current: 250A
Max. off-state voltage: 0.8kV
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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| BT139-800E.127 |
|
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 16A; TO220AB; Igt: 10/25mA; Ifsm: 155A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: TO220AB
Gate current: 10/25mA
Max. forward impulse current: 155A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 800V; 16A; TO220AB; Igt: 10/25mA; Ifsm: 155A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: TO220AB
Gate current: 10/25mA
Max. forward impulse current: 155A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
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| SMDJ30AJ |
|
Hersteller: WeEn Semiconductors
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 33.6÷36.59V; 62A; unidirectional; SMC; reel,tape
Type of diode: TVS
Semiconductor structure: unidirectional
Mounting: SMD
Kind of package: reel; tape
Max. off-state voltage: 30V
Breakdown voltage: 33.6...36.59V
Max. forward impulse current: 62A
Manufacturer series: SMDJ
Peak pulse power dissipation: 3kW
Case: SMC
Leakage current: 1µA
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 33.6÷36.59V; 62A; unidirectional; SMC; reel,tape
Type of diode: TVS
Semiconductor structure: unidirectional
Mounting: SMD
Kind of package: reel; tape
Max. off-state voltage: 30V
Breakdown voltage: 33.6...36.59V
Max. forward impulse current: 62A
Manufacturer series: SMDJ
Peak pulse power dissipation: 3kW
Case: SMC
Leakage current: 1µA
Produkt ist nicht verfügbar
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