Produkte > WEEN SEMICONDUCTORS > Alle Produkte des Herstellers WEEN SEMICONDUCTORS (5707) > Seite 96 nach 96
| Foto | Bezeichnung | Hersteller | Beschreibung |
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BUJ302A,127 | WeEn Semiconductors |
 Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 400V; 4A; 80W; TO220AB Mounting: THT Type of transistor: NPN Kind of package: tube Collector current: 4A Current gain: 25...50 Power dissipation: 80W Collector-emitter voltage: 400V Polarisation: bipolar Case: TO220AB |
auf Bestellung 134 Stücke: Lieferzeit 14-21 Tag (e) |
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BUJ302AX,127 | WeEn Semiconductors |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 400V; 4A; 26W; TO220FP Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 400V Collector current: 4A Power dissipation: 26W Case: TO220FP Current gain: 25...50 Mounting: THT Kind of package: tube |
auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) |
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| WND35P08XQ | WeEn Semiconductors |
Category: THT universal diodes Description: Diode: rectifying; THT; 800V; 35A; tube; Ifsm: 400A; Ufmax: 1.35V Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.8kV Load current: 35A Semiconductor structure: single diode Kind of package: tube Max. forward impulse current: 0.4kA Case: SOD113; TO220FP-2 Max. forward voltage: 1.35V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
| SMDJ40AJ | WeEn Semiconductors |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 3kW; 44.8÷48.8V; 46.5A; unidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 3kW Max. off-state voltage: 40V Breakdown voltage: 44.8...48.8V Max. forward impulse current: 46.5A Semiconductor structure: unidirectional Case: SMC Mounting: SMD Leakage current: 1µA Manufacturer series: SMDJ Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
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BTA316-800ET,127 | WeEn Semiconductors |
Category: Triacs Description: Triac; 800V; 16A; TO220AB; Igt: 10mA; Ifsm: 140A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 16A Case: TO220AB Gate current: 10mA Max. forward impulse current: 140A Technology: 3Q; Hi-Com Features of semiconductor devices: high temperature; sensitive gate Mounting: THT Kind of package: tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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BT136-600E | WeEn Semiconductors |
Category: Triacs Description: Triac; 600V; 4A; TO220AB; Igt: 10/25mA; Ifsm: 25A; 4Q; sensitive gate Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 4A Case: TO220AB Gate current: 10/25mA Mounting: THT Kind of package: tube Technology: 4Q Max. forward impulse current: 25A Features of semiconductor devices: sensitive gate |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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BTA212-600B,127 | WeEn Semiconductors |
Category: Triacs Description: Triac; 600V; 12A; TO220AB; Igt: 50mA; Ifsm: 95A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 12A Case: TO220AB Gate current: 50mA Max. forward impulse current: 95A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| BUJ302A,127 |
|
Hersteller: WeEn Semiconductors
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 400V; 4A; 80W; TO220AB
Mounting: THT
Type of transistor: NPN
Kind of package: tube
Collector current: 4A
Current gain: 25...50
Power dissipation: 80W
Collector-emitter voltage: 400V
Polarisation: bipolar
Case: TO220AB
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 400V; 4A; 80W; TO220AB
Mounting: THT
Type of transistor: NPN
Kind of package: tube
Collector current: 4A
Current gain: 25...50
Power dissipation: 80W
Collector-emitter voltage: 400V
Polarisation: bipolar
Case: TO220AB
auf Bestellung 134 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 85+ | 0.84 EUR |
| 117+ | 0.61 EUR |
| 134+ | 0.53 EUR |
| BUJ302AX,127 |
|
Hersteller: WeEn Semiconductors
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 400V; 4A; 26W; TO220FP
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 400V
Collector current: 4A
Power dissipation: 26W
Case: TO220FP
Current gain: 25...50
Mounting: THT
Kind of package: tube
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 400V; 4A; 26W; TO220FP
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 400V
Collector current: 4A
Power dissipation: 26W
Case: TO220FP
Current gain: 25...50
Mounting: THT
Kind of package: tube
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 85+ | 0.84 EUR |
| 117+ | 0.61 EUR |
| 145+ | 0.5 EUR |
| 161+ | 0.45 EUR |
| 182+ | 0.39 EUR |
| WND35P08XQ |
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Hersteller: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 35A; tube; Ifsm: 400A; Ufmax: 1.35V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.8kV
Load current: 35A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 0.4kA
Case: SOD113; TO220FP-2
Max. forward voltage: 1.35V
Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 35A; tube; Ifsm: 400A; Ufmax: 1.35V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.8kV
Load current: 35A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 0.4kA
Case: SOD113; TO220FP-2
Max. forward voltage: 1.35V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SMDJ40AJ |
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Hersteller: WeEn Semiconductors
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 44.8÷48.8V; 46.5A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 40V
Breakdown voltage: 44.8...48.8V
Max. forward impulse current: 46.5A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMDJ
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 44.8÷48.8V; 46.5A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 40V
Breakdown voltage: 44.8...48.8V
Max. forward impulse current: 46.5A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMDJ
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BTA316-800ET,127 |
|
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 16A; TO220AB; Igt: 10mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: TO220AB
Gate current: 10mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: high temperature; sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 800V; 16A; TO220AB; Igt: 10mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: TO220AB
Gate current: 10mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: high temperature; sensitive gate
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BT136-600E |
|
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 4A; TO220AB; Igt: 10/25mA; Ifsm: 25A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: TO220AB
Gate current: 10/25mA
Mounting: THT
Kind of package: tube
Technology: 4Q
Max. forward impulse current: 25A
Features of semiconductor devices: sensitive gate
Category: Triacs
Description: Triac; 600V; 4A; TO220AB; Igt: 10/25mA; Ifsm: 25A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: TO220AB
Gate current: 10/25mA
Mounting: THT
Kind of package: tube
Technology: 4Q
Max. forward impulse current: 25A
Features of semiconductor devices: sensitive gate
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BTA212-600B,127 |
|
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 12A; TO220AB; Igt: 50mA; Ifsm: 95A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: TO220AB
Gate current: 50mA
Max. forward impulse current: 95A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 600V; 12A; TO220AB; Igt: 50mA; Ifsm: 95A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: TO220AB
Gate current: 50mA
Max. forward impulse current: 95A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH