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BT169G-MQP WeEn Semiconductors bt169g-m.pdf Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 0.8A; 0.5A; Igt: 50mA; TO92; THT; Ifsm: 8A; 2us
Type of thyristor: thyristor
Max. off-state voltage: 0.6kV
Max. load current: 0.8A
Load current: 0.5A
Gate current: 50mA
Case: TO92
Mounting: THT
Max. forward impulse current: 8A
Turn-on time: 2µs
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BT169G/DG,126 WeEn Semiconductors BT169_Series.pdf Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 0.8A; 0.5A; Igt: 50mA; TO92; THT; Ifsm: 8A; 2us
Type of thyristor: thyristor
Max. off-state voltage: 0.6kV
Max. load current: 0.8A
Load current: 0.5A
Gate current: 50mA
Case: TO92
Mounting: THT
Max. forward impulse current: 8A
Turn-on time: 2µs
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BT169H-LML WeEn Semiconductors bt169h-l.pdf Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 0.8A; 0.5A; Igt: 100uA; TO92; THT; Ifsm: 9A
Type of thyristor: thyristor
Max. off-state voltage: 0.8kV
Max. load current: 0.8A
Load current: 0.5A
Gate current: 100µA
Case: TO92
Mounting: THT
Max. forward impulse current: 9A
Turn-on time: 2µs
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BT169H/01U WeEn Semiconductors bt169h.pdf Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 0.8A; 0.5A; Igt: 100uA; TO92; THT; Ifsm: 9A
Type of thyristor: thyristor
Max. off-state voltage: 0.8kV
Max. load current: 0.8A
Load current: 0.5A
Gate current: 100µA
Case: TO92
Mounting: THT
Max. forward impulse current: 9A
Turn-on time: 2µs
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BT168GW,135 WeEn Semiconductors BT168GW.pdf Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 1A; 0.63A; Igt: 50uA; SOT223; SMD; reel,tape
Mounting: SMD
Case: SOT223
Kind of package: reel; tape
Type of thyristor: thyristor
Turn-on time: 2µs
Gate current: 50µA
Load current: 0.63A
Max. load current: 1A
Max. forward impulse current: 8A
Max. off-state voltage: 0.6kV
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SMAJ18AJ WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB281E1EDE90C9E918179D00D5&compId=SMAJ%20Series.pdf?ci_sign=02ff97b748452aeefee6ed770587255daaa32026 Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 20.19÷21.9V; 13.7A; unidirectional; SMA; SMAJ
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 18V
Breakdown voltage: 20.19...21.9V
Max. forward impulse current: 13.7A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMAJ
Kind of package: reel; tape
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BT137-800G0TQ BT137-800G0TQ WeEn Semiconductors bt137-800g0t.pdf Category: Triacs
Description: Triac; 800V; 8A; TO220AB; Igt: 50/100mA; Ifsm: 65A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 8A
Case: TO220AB
Gate current: 50/100mA
Mounting: THT
Kind of package: tube
Technology: 4Q
Max. forward impulse current: 65A
Features of semiconductor devices: sensitive gate
auf Bestellung 950 Stücke:
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80+0.9 EUR
123+0.58 EUR
141+0.51 EUR
250+0.44 EUR
500+0.41 EUR
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BTA316B-600B0J WeEn Semiconductors bta316b-600b0.pdf Category: Triacs
Description: Triac; 600V; 16A; D2PAK; Igt: 50mA; Ifsm: 140A; 3Q,Hi-Com
Mounting: SMD
Max. forward impulse current: 140A
Max. off-state voltage: 0.6kV
Technology: 3Q; Hi-Com
Case: D2PAK
Features of semiconductor devices: sensitive gate
Kind of package: reel; tape
Type of thyristor: triac
Gate current: 50mA
Max. load current: 16A
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BTA316B-600BT,118 WeEn Semiconductors bta316b-600bt.pdf Category: Triacs
Description: Triac; 600V; 16A; D2PAK; Igt: 50mA; Ifsm: 140A; 3Q,Hi-Com
Mounting: SMD
Max. forward impulse current: 140A
Max. off-state voltage: 0.6kV
Technology: 3Q; Hi-Com
Case: D2PAK
Features of semiconductor devices: high temperature; sensitive gate
Kind of package: reel; tape
Type of thyristor: triac
Gate current: 50mA
Max. load current: 16A
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BTA2008-1000D,126 WeEn Semiconductors bta2008-1000d.pdf Category: Triacs
Description: Triac; 1kV; 0.8A; TO92; Igt: 5mA; Ifsm: 9.9A; 3Q,Hi-Com
Features of semiconductor devices: logic level; sensitive gate
Mounting: THT
Case: TO92
Type of thyristor: triac
Gate current: 5mA
Max. load current: 0.8A
Max. forward impulse current: 9.9A
Max. off-state voltage: 1kV
Technology: 3Q; Hi-Com
Kind of package: Ammo Pack
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BTA2008-600D,412 WeEn Semiconductors bta2008-600d.pdf Category: Triacs
Description: Triac; 600V; 0.8A; TO92; Igt: 5mA; Ifsm: 9A; 3Q,Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Case: TO92
Type of thyristor: triac
Gate current: 5mA
Max. load current: 0.8A
Max. forward impulse current: 9A
Max. off-state voltage: 0.6kV
Technology: 3Q; Hi-Com
Kind of package: bulk
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BTA140-800.127 BTA140-800.127 WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB752F1ED7829261AA2A010259&compId=BTA140-800.pdf?ci_sign=1a03c5cfde2b2cc91b0d8bd2d97ee221da3789e7 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36 Category: Triacs
Description: Triac; 800V; 25A; TO220AB; Igt: 35/70mA; Ifsm: 190A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 25A
Case: TO220AB
Gate current: 35/70mA
Max. forward impulse current: 190A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
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BTA204S-1000C,118 BTA204S-1000C,118 WeEn Semiconductors bta204s-1000c.pdf Category: Triacs
Description: Triac; 1kV; 4A; DPAK; Igt: 35mA; Ifsm: 25A; 3Q,Hi-Com; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 1kV
Max. load current: 4A
Case: DPAK
Gate current: 35mA
Max. forward impulse current: 25A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
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BTA204-600C,127 BTA204-600C,127 WeEn Semiconductors bta204-600c.pdf PHGLS30374-1.pdf?t.download=true&u=5oefqw Category: Triacs
Description: Triac; 600V; 4A; TO220AB; Igt: 35mA; Ifsm: 25A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: TO220AB
Gate current: 35mA
Max. forward impulse current: 25A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
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BTA204-600E,127 BTA204-600E,127 WeEn Semiconductors bta204-600e.pdf Category: Triacs
Description: Triac; 600V; 4A; TO220AB; Igt: 10mA; Ifsm: 25A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: TO220AB
Gate current: 10mA
Max. forward impulse current: 25A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
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BTA204-600F,127 BTA204-600F,127 WeEn Semiconductors bta204-600f.pdf Category: Triacs
Description: Triac; 600V; 4A; TO220AB; Igt: 25mA; Ifsm: 25A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: TO220AB
Gate current: 25mA
Max. forward impulse current: 25A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
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BTA204W-600E,135 BTA204W-600E,135 WeEn Semiconductors PHGLS30330-1.pdf?t.download=true&u=5oefqw BTA204W-600E.pdf Category: Triacs
Description: Triac; 600V; 4A; SOT223; Igt: 10mA; Ifsm: 25A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: SOT223
Gate current: 10mA
Max. forward impulse current: 25A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
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BTA204W-600F,135 BTA204W-600F,135 WeEn Semiconductors bta204w-600f.pdf Category: Triacs
Description: Triac; 600V; 4A; SOT223; Igt: 25mA; Ifsm: 25A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: SOT223
Gate current: 25mA
Max. forward impulse current: 25A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
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BTA204W-600C,135 BTA204W-600C,135 WeEn Semiconductors bta204w-600c.pdf Category: Triacs
Description: Triac; 600V; 4A; SOT223; Igt: 35mA; Ifsm: 25A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: SOT223
Gate current: 35mA
Max. forward impulse current: 25A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
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BTA204W-600D,135 BTA204W-600D,135 WeEn Semiconductors bta204w-600d.pdf Category: Triacs
Description: Triac; 600V; 4A; SOT223; Igt: 5mA; Ifsm: 25A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: SOT223
Gate current: 5mA
Max. forward impulse current: 25A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
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WNSC2M150120B76J WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB281E1EDF93E3A1F3B304C0D6&compId=WNSC2M150120B76J.pdf?ci_sign=95e3cf55126155614eab620f96ccb1e7bf6e13bb Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 20.3A; Idm: 58A; 231W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 20.3A
Pulsed drain current: 58A
Power dissipation: 231W
Case: TO263-7
Gate-source voltage: -4...18V
On-state resistance: 233mΩ
Mounting: SMD
Gate charge: 40nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
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WNSC2M150120W6Q WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB281E1EDF93E3AE83A28900D6&compId=WNSC2M150120W6Q.pdf?ci_sign=1bfebe2b2c448c8d2403767a159da2a5170546f8 Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 16.5A; Idm: 46A; 153W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 16.5A
Pulsed drain current: 46A
Power dissipation: 153W
Case: TO247-3
Gate-source voltage: -4...18V
On-state resistance: 233mΩ
Mounting: THT
Gate charge: 40nC
Kind of package: tube
Kind of channel: enhancement
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BTA206X-800ET,127 BTA206X-800ET,127 WeEn Semiconductors bta206x-800et.pdf Category: Triacs
Description: Triac; 800V; 6A; TO220FP; Igt: 10mA; Ifsm: 60A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 6A
Case: TO220FP
Gate current: 10mA
Max. forward impulse current: 60A
Technology: 3Q; Hi-Com
Features of semiconductor devices: high temperature; sensitive gate
Mounting: THT
Kind of package: tube
auf Bestellung 986 Stücke:
Lieferzeit 14-21 Tag (e)
65+1.12 EUR
86+0.84 EUR
101+0.71 EUR
173+0.41 EUR
183+0.39 EUR
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WNSC2D401200CWQ WNSC2D401200CWQ WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB281E1EDCA7F246E1B8D8A0CE&compId=WNSC2D401200CW.pdf?ci_sign=5120f02d7ef8f8aa5eba219fdbdad220b151ca15 Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20Ax2; TO247-3; tube
Technology: SiC
Case: TO247-3
Mounting: THT
Kind of package: tube
Load current: 20A x2
Max. load current: 40A
Max. forward impulse current: 125A
Max. off-state voltage: 1.2kV
Semiconductor structure: common cathode; double
Type of diode: Schottky rectifying
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WNSC201200CWQ WNSC201200CWQ WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A49BA26121675820&compId=WNSC201200CW.pdf?ci_sign=3295f3895b3894c62c453f94c0d83e89a93cc953 Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10Ax2; TO247-3; tube
Technology: SiC
Case: TO247-3
Mounting: THT
Kind of package: tube
Max. forward voltage: 1.4V
Load current: 10A x2
Max. load current: 20A
Max. forward impulse current: 110A
Max. off-state voltage: 1.2kV
Semiconductor structure: common cathode; double
Type of diode: Schottky rectifying
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WNSC2D0512006Q WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB281E1EDF93E5C5CF56C580D6&compId=WNSC2D0512006Q.pdf?ci_sign=2b73b87f5e80065daa9b3f53ef0ea3fb09daa0dc Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 5A; TO220AC; tube
Technology: SiC
Case: TO220AC
Mounting: THT
Kind of package: tube
Load current: 5A
Max. load current: 10A
Max. forward impulse current: 50A
Max. off-state voltage: 1.2kV
Semiconductor structure: single diode
Type of diode: Schottky rectifying
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WNSC2D10650BJ WeEn Semiconductors pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDB8D0BBD15D3580D4&compId=WNSC2D10650BJ.pdf?ci_sign=367434d122ac38c9b79d939c73ee4802f482d2ea Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SiC; SMD; 650V; 10A; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: D2PAK
Max. load current: 20A
Max. forward impulse current: 50A
Kind of package: reel; tape
Max. forward voltage: 2.2V
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WNSC2D501200W6Q WeEn Semiconductors pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDB8D0D9059C2340D4&compId=WNSC2D501200W6Q.pdf?ci_sign=0e2c6b09c89114d5f9d0eef66402880a9f38e6ff Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 50A; TO247-2; tube
Technology: SiC
Case: TO247-2
Mounting: THT
Kind of package: tube
Max. forward voltage: 2.5V
Load current: 50A
Max. load current: 100A
Max. forward impulse current: 420A
Max. off-state voltage: 1.2kV
Semiconductor structure: single diode
Type of diode: Schottky rectifying
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WNSC2M20120R6Q WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB281E1EDE90CB19C19C0140D5&compId=WNSC2M20120R.pdf?ci_sign=f8943087bbb6e6312e9a1eea4907c8cf2d700a6a Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 94A; Idm: 200A; 750W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 94A
Pulsed drain current: 200A
Power dissipation: 750W
Case: TO247-4
Gate-source voltage: -12...22V
On-state resistance: 20mΩ
Mounting: THT
Gate charge: 32nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
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WNSC201200WQ WNSC201200WQ WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A49B8C6C09213820&compId=WNSC201200W.pdf?ci_sign=c9e52c3154a9087f86aec1621a4bd6e4387e3bfd Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; TO247-2; tube
Technology: SiC
Case: TO247-2
Mounting: THT
Kind of package: tube
Max. forward voltage: 1.4V
Load current: 20A
Max. load current: 40A
Max. forward impulse current: 220A
Max. off-state voltage: 1.2kV
Semiconductor structure: single diode
Type of diode: Schottky rectifying
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WNSC2D03650MBJ WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB281E1EDF93E5AE6CB068E0D6&compId=WNSC2D03650MBJ.pdf?ci_sign=4855bc2c68d7409865f9c0ba24f748ea85d0d35d Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SiC; SMD; 650V; 3A; reel,tape
Technology: SiC
Case: SMB
Mounting: SMD
Kind of package: reel; tape
Load current: 3A
Max. load current: 6A
Max. forward impulse current: 18A
Max. off-state voltage: 650V
Semiconductor structure: single diode
Type of diode: Schottky rectifying
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WNSC2D06650DJ WNSC2D06650DJ WeEn Semiconductors WNSC2D06650D.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SiC; SMD; 650V; 6A; reel,tape
Technology: SiC
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Load current: 6A
Max. forward impulse current: 36A
Max. off-state voltage: 650V
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Produkt ist nicht verfügbar
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WNSC2D06650TJ WeEn Semiconductors Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN8x8N; SiC; SMD; 650V; 6A; reel,tape
Technology: SiC
Case: DFN8x8N
Mounting: SMD
Kind of package: reel; tape
Load current: 6A
Max. forward impulse current: 36A
Max. off-state voltage: 650V
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Produkt ist nicht verfügbar
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WNSC2D06650XQ WNSC2D06650XQ WeEn Semiconductors WNSC2D06650X.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; TO220FP-2; tube
Technology: SiC
Case: TO220FP-2
Mounting: THT
Kind of package: tube
Load current: 6A
Max. forward impulse current: 30A
Max. off-state voltage: 650V
Semiconductor structure: single diode
Type of diode: Schottky rectifying
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WNSC2D08650DJ WNSC2D08650DJ WeEn Semiconductors WNSC2D08650D.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SiC; SMD; 650V; 8A; reel,tape
Technology: SiC
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Load current: 8A
Max. forward impulse current: 48A
Max. off-state voltage: 650V
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Produkt ist nicht verfügbar
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WNSC2D08650TJ WeEn Semiconductors WNSC2D08650T.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN8x8N; SiC; SMD; 650V; 8A; reel,tape
Technology: SiC
Case: DFN8x8N
Mounting: SMD
Kind of package: reel; tape
Load current: 8A
Max. forward impulse current: 48A
Max. off-state voltage: 650V
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Produkt ist nicht verfügbar
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WNSC2D101200WQ WNSC2D101200WQ WeEn Semiconductors WNSC2D101200W.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10A; TO247-2; tube
Technology: SiC
Case: TO247-2
Mounting: THT
Kind of package: tube
Max. forward voltage: 1.88V
Load current: 10A
Max. forward impulse current: 72A
Max. off-state voltage: 1.2kV
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Produkt ist nicht verfügbar
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WNSC2D10650DJ WNSC2D10650DJ WeEn Semiconductors WNSC2D10650D.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SiC; SMD; 650V; 10A; reel,tape
Technology: SiC
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Load current: 10A
Max. forward impulse current: 50A
Max. off-state voltage: 650V
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Produkt ist nicht verfügbar
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WNSC2D10650TJ WeEn Semiconductors WNSC2D10650T.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN8x8N; SiC; SMD; 650V; 10A; reel,tape
Technology: SiC
Case: DFN8x8N
Mounting: SMD
Kind of package: reel; tape
Load current: 10A
Max. forward impulse current: 50A
Max. off-state voltage: 650V
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Produkt ist nicht verfügbar
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WNSC2D10650XQ WNSC2D10650XQ WeEn Semiconductors Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220FP-2; tube
Technology: SiC
Case: TO220FP-2
Mounting: THT
Kind of package: tube
Load current: 10A
Max. forward impulse current: 50A
Max. off-state voltage: 650V
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Produkt ist nicht verfügbar
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WNSC2D20650CJQ WNSC2D20650CJQ WeEn Semiconductors WNSC2D20650CJ%20%281%29.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; SOT1293,TO3PF
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: SOT1293; TO3PF
Max. forward voltage: 1.8V
Max. forward impulse current: 50A
Kind of package: tube
Max. load current: 20A
Produkt ist nicht verfügbar
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WNSC2D20650CWQ WNSC2D20650CWQ WeEn Semiconductors WNSC2D20650CW.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 1.8V
Max. forward impulse current: 50A
Kind of package: tube
Max. load current: 20A
Produkt ist nicht verfügbar
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WNSC2D301200CWQ WNSC2D301200CWQ WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB281E1EDCA7F23D058A0620CE&compId=WNSC2D301200CW.pdf?ci_sign=60e58728b3791b0f8fc43bb4670ecb8993344dad Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15Ax2; TO247-3; tube
Technology: SiC
Case: TO247-3
Mounting: THT
Kind of package: tube
Load current: 15A x2
Max. load current: 30A
Max. forward impulse current: 102A
Max. off-state voltage: 1.2kV
Semiconductor structure: common cathode; double
Type of diode: Schottky rectifying
Produkt ist nicht verfügbar
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WNSC2D401200W6Q WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB281E1EDE90CA39B8D85280D5&compId=WNSC2D401200W6Q.pdf?ci_sign=8081a5ecb81f1ad6c47aada494bd11c7a50a8e9a Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 40A; TO247-2; tube
Technology: SiC
Case: TO247-2
Mounting: THT
Kind of package: tube
Max. forward voltage: 2.5V
Load current: 40A
Max. load current: 80A
Max. forward impulse current: 350A
Max. off-state voltage: 1.2kV
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Produkt ist nicht verfügbar
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WNSC2M12120R6Q WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB281E1EDF93E39C7AF513A0D6&compId=WNSC2M12120R6Q.pdf?ci_sign=845f1a76f209c64f355944d83896c978865cbdd3 Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 152.8A; Idm: 430A; 1071W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 152.8A
Pulsed drain current: 430A
Power dissipation: 1071W
Case: TO247-4
Gate-source voltage: -4...18V
On-state resistance: 19.1mΩ
Mounting: THT
Gate charge: 321nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Produkt ist nicht verfügbar
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WNSC2M1K0170WQ WeEn Semiconductors pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDB8D055A3D5E3A0D4&compId=WNSC2M1K0170WQ.pdf?ci_sign=d1d8e4445852bceaf5de17a3a44faf4d953af0dd Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 5A; Idm: 20A; 79W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.7kV
Drain current: 5A
Pulsed drain current: 20A
Power dissipation: 79W
Case: TO247-3
Gate-source voltage: -10...22V
On-state resistance: 1Ω
Mounting: THT
Gate charge: 12nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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WNSC2M20120B76J WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB281E1EDF93E3CB6481A200D6&compId=WNSC2M20120B76J.pdf?ci_sign=7ea4931c87d847bdf0dca7a50c82cac3c19fc0df Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 109.2A; Idm: 300A; 789W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 109.2A
Pulsed drain current: 300A
Power dissipation: 789W
Case: TO263-7
Gate-source voltage: -4...18V
On-state resistance: 27.6mΩ
Mounting: SMD
Gate charge: 215nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Produkt ist nicht verfügbar
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BYV42E-200,127 BYV42E-200,127 WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB752F1EE890C1AC1AD6BEB3D3&compId=BYV42E_SERIES.pdf?ci_sign=25d73585ef229cf655605349d37e560fd442a3c2 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36 Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 15Ax2; tube; Ifsm: 150A; SOT78,TO220AB
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 15A x2
Reverse recovery time: 28ns
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Case: SOT78; TO220AB
Max. forward voltage: 1V
Max. load current: 30A
Max. forward impulse current: 150A
Kind of package: tube
Heatsink thickness: max. 1.3mm
Produkt ist nicht verfügbar
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WNSC5D20650W6Q WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB281E1EDF93E65101269260D6&compId=WNSC5D20650W6Q.pdf?ci_sign=63527af6dc2645ad87798c743de07c788f2a46a9 Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO247-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A
Semiconductor structure: single diode
Case: TO247-2
Max. forward impulse current: 100A
Kind of package: tube
Max. load current: 40A
Produkt ist nicht verfügbar
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BYC8X-600P,127 BYC8X-600P,127 WeEn Semiconductors byc8x-600p.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8A; tube; Ifsm: 100A; SOD113,TO220FP-2
Semiconductor structure: single diode
Case: SOD113; TO220FP-2
Type of diode: rectifying
Kind of package: tube
Mounting: THT
Reverse recovery time: 18ns
Max. forward voltage: 1.9V
Max. off-state voltage: 0.6kV
Load current: 8A
Max. forward impulse current: 100A
auf Bestellung 752 Stücke:
Lieferzeit 14-21 Tag (e)
65+1.12 EUR
81+0.89 EUR
91+0.79 EUR
172+0.42 EUR
182+0.39 EUR
Mindestbestellmenge: 65
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WNS20H100CBJ WNS20H100CBJ WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB90B41EDB9AF5F3408E36E0C7&compId=WNS20H100CB.pdf?ci_sign=665aea423c8dfc437efe54b5579a3393ca7539b8 Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 100V; 10Ax2; reel,tape
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 100V
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.7V
Max. load current: 20A
Max. forward impulse current: 180A
Kind of package: reel; tape
auf Bestellung 479 Stücke:
Lieferzeit 14-21 Tag (e)
58+1.24 EUR
79+0.91 EUR
167+0.43 EUR
176+0.41 EUR
Mindestbestellmenge: 58
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BYC30MW-650PT2Q WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB281E1EDF9FFB7F9103D9A0D6&compId=BYC30MW-650PT2.pdf?ci_sign=fa57dab85c14887008bc67828085f123d00b04ee Category: THT universal diodes
Description: Diode: rectifying; THT; 650V; 30A; tube; Ifsm: 270A; TO247-2; 20ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 650V
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 270A
Case: TO247-2
Max. forward voltage: 1.8V
Max. load current: 60A
Reverse recovery time: 20ns
Produkt ist nicht verfügbar
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BTA2008-800E,412 BTA2008-800E,412 WeEn Semiconductors bta2008-600e.pdf Category: Triacs
Description: Triac; 800V; 0.8A; TO92; Igt: 10mA; Ifsm: 9A; 3Q,Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Case: TO92
Type of thyristor: triac
Gate current: 10mA
Max. load current: 0.8A
Max. forward impulse current: 9A
Max. off-state voltage: 0.8kV
Technology: 3Q; Hi-Com
Kind of package: bulk
Produkt ist nicht verfügbar
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BTA2008-1000DNML WeEn Semiconductors bta2008-1000dn.pdf Category: Triacs
Description: Triac; 1kV; 0.8A; TO92; Igt: 5mA; Ifsm: 9A; 3Q,Hi-Com
Features of semiconductor devices: logic level; sensitive gate
Mounting: THT
Case: TO92
Type of thyristor: triac
Gate current: 5mA
Max. load current: 0.8A
Max. forward impulse current: 9A
Max. off-state voltage: 1kV
Technology: 3Q; Hi-Com
Kind of package: Ammo Pack
Produkt ist nicht verfügbar
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BTA2008-800D,412 WeEn Semiconductors bta2008-600d.pdf Category: Triacs
Description: Triac; 600V; 0.8A; TO92; Igt: 5mA; Ifsm: 9A; 3Q,Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Case: TO92
Type of thyristor: triac
Gate current: 5mA
Max. load current: 0.8A
Max. forward impulse current: 9A
Max. off-state voltage: 0.6kV
Technology: 3Q; Hi-Com
Kind of package: bulk
Produkt ist nicht verfügbar
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BYT79-500,127 BYT79-500,127 WeEn Semiconductors byt79-500.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 500V; 14A; tube; Ifsm: 130A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 500V
Load current: 14A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 130A
Case: SOD59; TO220AC
Max. forward voltage: 0.9V
Reverse recovery time: 60ns
auf Bestellung 777 Stücke:
Lieferzeit 14-21 Tag (e)
85+0.84 EUR
104+0.69 EUR
125+0.57 EUR
138+0.52 EUR
Mindestbestellmenge: 85
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BTA420-800CT,127 BTA420-800CT,127 WeEn Semiconductors bta420-800ct.pdf Category: Triacs
Description: Triac; 800V; 20A; TO220AB; Igt: 35mA; Ifsm: 200A; 3Q,Hi-Com
Mounting: THT
Features of semiconductor devices: high temperature; sensitive gate
Kind of package: tube
Case: TO220AB
Type of thyristor: triac
Gate current: 35mA
Max. load current: 20A
Max. forward impulse current: 200A
Max. off-state voltage: 0.8kV
Technology: 3Q; Hi-Com
Produkt ist nicht verfügbar
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BTA420X-800CT,127 BTA420X-800CT,127 WeEn Semiconductors bta420x-800ct.pdf Category: Triacs
Description: Triac; 800V; 20A; TO220FP; Igt: 35mA; Ifsm: 200A; 3Q,Hi-Com
Mounting: THT
Features of semiconductor devices: high temperature; sensitive gate
Kind of package: tube
Case: TO220FP
Type of thyristor: triac
Gate current: 35mA
Max. load current: 20A
Max. forward impulse current: 200A
Max. off-state voltage: 0.8kV
Technology: 3Q; Hi-Com
Produkt ist nicht verfügbar
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BTA420-800BT,127 WeEn Semiconductors bta420-800bt.pdf Category: Triacs
Description: Triac; 800V; 20A; TO220AB; Igt: 50mA; Ifsm: 200A; 3Q,Hi-Com
Mounting: THT
Features of semiconductor devices: high temperature; sensitive gate
Kind of package: tube
Case: TO220AB
Type of thyristor: triac
Gate current: 50mA
Max. load current: 20A
Max. forward impulse current: 200A
Max. off-state voltage: 0.8kV
Technology: 3Q; Hi-Com
Produkt ist nicht verfügbar
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BTA420Y-800BT,127 WeEn Semiconductors bta420y-800bt.pdf Category: Triacs
Description: Triac; 800V; 20A; TO220AB; Igt: 50mA; Ifsm: 220A; 3Q,Hi-Com
Mounting: THT
Features of semiconductor devices: high temperature; sensitive gate
Kind of package: tube
Case: TO220AB
Type of thyristor: triac
Gate current: 50mA
Max. load current: 20A
Max. forward impulse current: 220A
Max. off-state voltage: 0.8kV
Technology: 3Q; Hi-Com
Produkt ist nicht verfügbar
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BT169G-MQP bt169g-m.pdf
Hersteller: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 0.8A; 0.5A; Igt: 50mA; TO92; THT; Ifsm: 8A; 2us
Type of thyristor: thyristor
Max. off-state voltage: 0.6kV
Max. load current: 0.8A
Load current: 0.5A
Gate current: 50mA
Case: TO92
Mounting: THT
Max. forward impulse current: 8A
Turn-on time: 2µs
Produkt ist nicht verfügbar
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BT169G/DG,126 BT169_Series.pdf
Hersteller: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 0.8A; 0.5A; Igt: 50mA; TO92; THT; Ifsm: 8A; 2us
Type of thyristor: thyristor
Max. off-state voltage: 0.6kV
Max. load current: 0.8A
Load current: 0.5A
Gate current: 50mA
Case: TO92
Mounting: THT
Max. forward impulse current: 8A
Turn-on time: 2µs
Produkt ist nicht verfügbar
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BT169H-LML bt169h-l.pdf
Hersteller: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 0.8A; 0.5A; Igt: 100uA; TO92; THT; Ifsm: 9A
Type of thyristor: thyristor
Max. off-state voltage: 0.8kV
Max. load current: 0.8A
Load current: 0.5A
Gate current: 100µA
Case: TO92
Mounting: THT
Max. forward impulse current: 9A
Turn-on time: 2µs
Produkt ist nicht verfügbar
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BT169H/01U bt169h.pdf
Hersteller: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 0.8A; 0.5A; Igt: 100uA; TO92; THT; Ifsm: 9A
Type of thyristor: thyristor
Max. off-state voltage: 0.8kV
Max. load current: 0.8A
Load current: 0.5A
Gate current: 100µA
Case: TO92
Mounting: THT
Max. forward impulse current: 9A
Turn-on time: 2µs
Produkt ist nicht verfügbar
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BT168GW,135 BT168GW.pdf
Hersteller: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 1A; 0.63A; Igt: 50uA; SOT223; SMD; reel,tape
Mounting: SMD
Case: SOT223
Kind of package: reel; tape
Type of thyristor: thyristor
Turn-on time: 2µs
Gate current: 50µA
Load current: 0.63A
Max. load current: 1A
Max. forward impulse current: 8A
Max. off-state voltage: 0.6kV
Produkt ist nicht verfügbar
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SMAJ18AJ pVersion=0046&contRep=ZT&docId=005056AB281E1EDE90C9E918179D00D5&compId=SMAJ%20Series.pdf?ci_sign=02ff97b748452aeefee6ed770587255daaa32026
Hersteller: WeEn Semiconductors
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 20.19÷21.9V; 13.7A; unidirectional; SMA; SMAJ
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 18V
Breakdown voltage: 20.19...21.9V
Max. forward impulse current: 13.7A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMAJ
Kind of package: reel; tape
Produkt ist nicht verfügbar
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BT137-800G0TQ bt137-800g0t.pdf
BT137-800G0TQ
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 8A; TO220AB; Igt: 50/100mA; Ifsm: 65A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 8A
Case: TO220AB
Gate current: 50/100mA
Mounting: THT
Kind of package: tube
Technology: 4Q
Max. forward impulse current: 65A
Features of semiconductor devices: sensitive gate
auf Bestellung 950 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
80+0.9 EUR
123+0.58 EUR
141+0.51 EUR
250+0.44 EUR
500+0.41 EUR
Mindestbestellmenge: 80
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BTA316B-600B0J bta316b-600b0.pdf
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 16A; D2PAK; Igt: 50mA; Ifsm: 140A; 3Q,Hi-Com
Mounting: SMD
Max. forward impulse current: 140A
Max. off-state voltage: 0.6kV
Technology: 3Q; Hi-Com
Case: D2PAK
Features of semiconductor devices: sensitive gate
Kind of package: reel; tape
Type of thyristor: triac
Gate current: 50mA
Max. load current: 16A
Produkt ist nicht verfügbar
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BTA316B-600BT,118 bta316b-600bt.pdf
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 16A; D2PAK; Igt: 50mA; Ifsm: 140A; 3Q,Hi-Com
Mounting: SMD
Max. forward impulse current: 140A
Max. off-state voltage: 0.6kV
Technology: 3Q; Hi-Com
Case: D2PAK
Features of semiconductor devices: high temperature; sensitive gate
Kind of package: reel; tape
Type of thyristor: triac
Gate current: 50mA
Max. load current: 16A
Produkt ist nicht verfügbar
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BTA2008-1000D,126 bta2008-1000d.pdf
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 1kV; 0.8A; TO92; Igt: 5mA; Ifsm: 9.9A; 3Q,Hi-Com
Features of semiconductor devices: logic level; sensitive gate
Mounting: THT
Case: TO92
Type of thyristor: triac
Gate current: 5mA
Max. load current: 0.8A
Max. forward impulse current: 9.9A
Max. off-state voltage: 1kV
Technology: 3Q; Hi-Com
Kind of package: Ammo Pack
Produkt ist nicht verfügbar
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BTA2008-600D,412 bta2008-600d.pdf
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 0.8A; TO92; Igt: 5mA; Ifsm: 9A; 3Q,Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Case: TO92
Type of thyristor: triac
Gate current: 5mA
Max. load current: 0.8A
Max. forward impulse current: 9A
Max. off-state voltage: 0.6kV
Technology: 3Q; Hi-Com
Kind of package: bulk
Produkt ist nicht verfügbar
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BTA140-800.127 pVersion=0046&contRep=ZT&docId=005056AB752F1ED7829261AA2A010259&compId=BTA140-800.pdf?ci_sign=1a03c5cfde2b2cc91b0d8bd2d97ee221da3789e7 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36
BTA140-800.127
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 25A; TO220AB; Igt: 35/70mA; Ifsm: 190A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 25A
Case: TO220AB
Gate current: 35/70mA
Max. forward impulse current: 190A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
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BTA204S-1000C,118 bta204s-1000c.pdf
BTA204S-1000C,118
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 1kV; 4A; DPAK; Igt: 35mA; Ifsm: 25A; 3Q,Hi-Com; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 1kV
Max. load current: 4A
Case: DPAK
Gate current: 35mA
Max. forward impulse current: 25A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
Produkt ist nicht verfügbar
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BTA204-600C,127 bta204-600c.pdf PHGLS30374-1.pdf?t.download=true&u=5oefqw
BTA204-600C,127
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 4A; TO220AB; Igt: 35mA; Ifsm: 25A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: TO220AB
Gate current: 35mA
Max. forward impulse current: 25A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
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BTA204-600E,127 bta204-600e.pdf
BTA204-600E,127
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 4A; TO220AB; Igt: 10mA; Ifsm: 25A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: TO220AB
Gate current: 10mA
Max. forward impulse current: 25A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
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BTA204-600F,127 bta204-600f.pdf
BTA204-600F,127
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 4A; TO220AB; Igt: 25mA; Ifsm: 25A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: TO220AB
Gate current: 25mA
Max. forward impulse current: 25A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
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BTA204W-600E,135 PHGLS30330-1.pdf?t.download=true&u=5oefqw BTA204W-600E.pdf
BTA204W-600E,135
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 4A; SOT223; Igt: 10mA; Ifsm: 25A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: SOT223
Gate current: 10mA
Max. forward impulse current: 25A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
Produkt ist nicht verfügbar
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BTA204W-600F,135 bta204w-600f.pdf
BTA204W-600F,135
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 4A; SOT223; Igt: 25mA; Ifsm: 25A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: SOT223
Gate current: 25mA
Max. forward impulse current: 25A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTA204W-600C,135 bta204w-600c.pdf
BTA204W-600C,135
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 4A; SOT223; Igt: 35mA; Ifsm: 25A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: SOT223
Gate current: 35mA
Max. forward impulse current: 25A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTA204W-600D,135 bta204w-600d.pdf
BTA204W-600D,135
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 4A; SOT223; Igt: 5mA; Ifsm: 25A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: SOT223
Gate current: 5mA
Max. forward impulse current: 25A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WNSC2M150120B76J pVersion=0046&contRep=ZT&docId=005056AB281E1EDF93E3A1F3B304C0D6&compId=WNSC2M150120B76J.pdf?ci_sign=95e3cf55126155614eab620f96ccb1e7bf6e13bb
Hersteller: WeEn Semiconductors
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 20.3A; Idm: 58A; 231W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 20.3A
Pulsed drain current: 58A
Power dissipation: 231W
Case: TO263-7
Gate-source voltage: -4...18V
On-state resistance: 233mΩ
Mounting: SMD
Gate charge: 40nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WNSC2M150120W6Q pVersion=0046&contRep=ZT&docId=005056AB281E1EDF93E3AE83A28900D6&compId=WNSC2M150120W6Q.pdf?ci_sign=1bfebe2b2c448c8d2403767a159da2a5170546f8
Hersteller: WeEn Semiconductors
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 16.5A; Idm: 46A; 153W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 16.5A
Pulsed drain current: 46A
Power dissipation: 153W
Case: TO247-3
Gate-source voltage: -4...18V
On-state resistance: 233mΩ
Mounting: THT
Gate charge: 40nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BTA206X-800ET,127 bta206x-800et.pdf
BTA206X-800ET,127
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 6A; TO220FP; Igt: 10mA; Ifsm: 60A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 6A
Case: TO220FP
Gate current: 10mA
Max. forward impulse current: 60A
Technology: 3Q; Hi-Com
Features of semiconductor devices: high temperature; sensitive gate
Mounting: THT
Kind of package: tube
auf Bestellung 986 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
65+1.12 EUR
86+0.84 EUR
101+0.71 EUR
173+0.41 EUR
183+0.39 EUR
Mindestbestellmenge: 65
Im Einkaufswagen  Stück im Wert von  UAH
WNSC2D401200CWQ pVersion=0046&contRep=ZT&docId=005056AB281E1EDCA7F246E1B8D8A0CE&compId=WNSC2D401200CW.pdf?ci_sign=5120f02d7ef8f8aa5eba219fdbdad220b151ca15
WNSC2D401200CWQ
Hersteller: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20Ax2; TO247-3; tube
Technology: SiC
Case: TO247-3
Mounting: THT
Kind of package: tube
Load current: 20A x2
Max. load current: 40A
Max. forward impulse current: 125A
Max. off-state voltage: 1.2kV
Semiconductor structure: common cathode; double
Type of diode: Schottky rectifying
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WNSC201200CWQ pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A49BA26121675820&compId=WNSC201200CW.pdf?ci_sign=3295f3895b3894c62c453f94c0d83e89a93cc953
WNSC201200CWQ
Hersteller: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10Ax2; TO247-3; tube
Technology: SiC
Case: TO247-3
Mounting: THT
Kind of package: tube
Max. forward voltage: 1.4V
Load current: 10A x2
Max. load current: 20A
Max. forward impulse current: 110A
Max. off-state voltage: 1.2kV
Semiconductor structure: common cathode; double
Type of diode: Schottky rectifying
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WNSC2D0512006Q pVersion=0046&contRep=ZT&docId=005056AB281E1EDF93E5C5CF56C580D6&compId=WNSC2D0512006Q.pdf?ci_sign=2b73b87f5e80065daa9b3f53ef0ea3fb09daa0dc
Hersteller: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 5A; TO220AC; tube
Technology: SiC
Case: TO220AC
Mounting: THT
Kind of package: tube
Load current: 5A
Max. load current: 10A
Max. forward impulse current: 50A
Max. off-state voltage: 1.2kV
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WNSC2D10650BJ pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDB8D0BBD15D3580D4&compId=WNSC2D10650BJ.pdf?ci_sign=367434d122ac38c9b79d939c73ee4802f482d2ea
Hersteller: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SiC; SMD; 650V; 10A; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: D2PAK
Max. load current: 20A
Max. forward impulse current: 50A
Kind of package: reel; tape
Max. forward voltage: 2.2V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WNSC2D501200W6Q pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDB8D0D9059C2340D4&compId=WNSC2D501200W6Q.pdf?ci_sign=0e2c6b09c89114d5f9d0eef66402880a9f38e6ff
Hersteller: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 50A; TO247-2; tube
Technology: SiC
Case: TO247-2
Mounting: THT
Kind of package: tube
Max. forward voltage: 2.5V
Load current: 50A
Max. load current: 100A
Max. forward impulse current: 420A
Max. off-state voltage: 1.2kV
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WNSC2M20120R6Q pVersion=0046&contRep=ZT&docId=005056AB281E1EDE90CB19C19C0140D5&compId=WNSC2M20120R.pdf?ci_sign=f8943087bbb6e6312e9a1eea4907c8cf2d700a6a
Hersteller: WeEn Semiconductors
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 94A; Idm: 200A; 750W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 94A
Pulsed drain current: 200A
Power dissipation: 750W
Case: TO247-4
Gate-source voltage: -12...22V
On-state resistance: 20mΩ
Mounting: THT
Gate charge: 32nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WNSC201200WQ pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A49B8C6C09213820&compId=WNSC201200W.pdf?ci_sign=c9e52c3154a9087f86aec1621a4bd6e4387e3bfd
WNSC201200WQ
Hersteller: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; TO247-2; tube
Technology: SiC
Case: TO247-2
Mounting: THT
Kind of package: tube
Max. forward voltage: 1.4V
Load current: 20A
Max. load current: 40A
Max. forward impulse current: 220A
Max. off-state voltage: 1.2kV
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WNSC2D03650MBJ pVersion=0046&contRep=ZT&docId=005056AB281E1EDF93E5AE6CB068E0D6&compId=WNSC2D03650MBJ.pdf?ci_sign=4855bc2c68d7409865f9c0ba24f748ea85d0d35d
Hersteller: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SiC; SMD; 650V; 3A; reel,tape
Technology: SiC
Case: SMB
Mounting: SMD
Kind of package: reel; tape
Load current: 3A
Max. load current: 6A
Max. forward impulse current: 18A
Max. off-state voltage: 650V
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Produkt ist nicht verfügbar
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WNSC2D06650DJ WNSC2D06650D.pdf
WNSC2D06650DJ
Hersteller: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SiC; SMD; 650V; 6A; reel,tape
Technology: SiC
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Load current: 6A
Max. forward impulse current: 36A
Max. off-state voltage: 650V
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Produkt ist nicht verfügbar
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WNSC2D06650TJ
Hersteller: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN8x8N; SiC; SMD; 650V; 6A; reel,tape
Technology: SiC
Case: DFN8x8N
Mounting: SMD
Kind of package: reel; tape
Load current: 6A
Max. forward impulse current: 36A
Max. off-state voltage: 650V
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Produkt ist nicht verfügbar
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WNSC2D06650XQ WNSC2D06650X.pdf
WNSC2D06650XQ
Hersteller: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; TO220FP-2; tube
Technology: SiC
Case: TO220FP-2
Mounting: THT
Kind of package: tube
Load current: 6A
Max. forward impulse current: 30A
Max. off-state voltage: 650V
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WNSC2D08650DJ WNSC2D08650D.pdf
WNSC2D08650DJ
Hersteller: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SiC; SMD; 650V; 8A; reel,tape
Technology: SiC
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Load current: 8A
Max. forward impulse current: 48A
Max. off-state voltage: 650V
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WNSC2D08650TJ WNSC2D08650T.pdf
Hersteller: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN8x8N; SiC; SMD; 650V; 8A; reel,tape
Technology: SiC
Case: DFN8x8N
Mounting: SMD
Kind of package: reel; tape
Load current: 8A
Max. forward impulse current: 48A
Max. off-state voltage: 650V
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WNSC2D101200WQ WNSC2D101200W.pdf
WNSC2D101200WQ
Hersteller: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10A; TO247-2; tube
Technology: SiC
Case: TO247-2
Mounting: THT
Kind of package: tube
Max. forward voltage: 1.88V
Load current: 10A
Max. forward impulse current: 72A
Max. off-state voltage: 1.2kV
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WNSC2D10650DJ WNSC2D10650D.pdf
WNSC2D10650DJ
Hersteller: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SiC; SMD; 650V; 10A; reel,tape
Technology: SiC
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Load current: 10A
Max. forward impulse current: 50A
Max. off-state voltage: 650V
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WNSC2D10650TJ WNSC2D10650T.pdf
Hersteller: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN8x8N; SiC; SMD; 650V; 10A; reel,tape
Technology: SiC
Case: DFN8x8N
Mounting: SMD
Kind of package: reel; tape
Load current: 10A
Max. forward impulse current: 50A
Max. off-state voltage: 650V
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WNSC2D10650XQ
WNSC2D10650XQ
Hersteller: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220FP-2; tube
Technology: SiC
Case: TO220FP-2
Mounting: THT
Kind of package: tube
Load current: 10A
Max. forward impulse current: 50A
Max. off-state voltage: 650V
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WNSC2D20650CJQ WNSC2D20650CJ%20%281%29.pdf
WNSC2D20650CJQ
Hersteller: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; SOT1293,TO3PF
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: SOT1293; TO3PF
Max. forward voltage: 1.8V
Max. forward impulse current: 50A
Kind of package: tube
Max. load current: 20A
Produkt ist nicht verfügbar
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WNSC2D20650CWQ WNSC2D20650CW.pdf
WNSC2D20650CWQ
Hersteller: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 1.8V
Max. forward impulse current: 50A
Kind of package: tube
Max. load current: 20A
Produkt ist nicht verfügbar
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WNSC2D301200CWQ pVersion=0046&contRep=ZT&docId=005056AB281E1EDCA7F23D058A0620CE&compId=WNSC2D301200CW.pdf?ci_sign=60e58728b3791b0f8fc43bb4670ecb8993344dad
WNSC2D301200CWQ
Hersteller: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15Ax2; TO247-3; tube
Technology: SiC
Case: TO247-3
Mounting: THT
Kind of package: tube
Load current: 15A x2
Max. load current: 30A
Max. forward impulse current: 102A
Max. off-state voltage: 1.2kV
Semiconductor structure: common cathode; double
Type of diode: Schottky rectifying
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WNSC2D401200W6Q pVersion=0046&contRep=ZT&docId=005056AB281E1EDE90CA39B8D85280D5&compId=WNSC2D401200W6Q.pdf?ci_sign=8081a5ecb81f1ad6c47aada494bd11c7a50a8e9a
Hersteller: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 40A; TO247-2; tube
Technology: SiC
Case: TO247-2
Mounting: THT
Kind of package: tube
Max. forward voltage: 2.5V
Load current: 40A
Max. load current: 80A
Max. forward impulse current: 350A
Max. off-state voltage: 1.2kV
Semiconductor structure: single diode
Type of diode: Schottky rectifying
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WNSC2M12120R6Q pVersion=0046&contRep=ZT&docId=005056AB281E1EDF93E39C7AF513A0D6&compId=WNSC2M12120R6Q.pdf?ci_sign=845f1a76f209c64f355944d83896c978865cbdd3
Hersteller: WeEn Semiconductors
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 152.8A; Idm: 430A; 1071W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 152.8A
Pulsed drain current: 430A
Power dissipation: 1071W
Case: TO247-4
Gate-source voltage: -4...18V
On-state resistance: 19.1mΩ
Mounting: THT
Gate charge: 321nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
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WNSC2M1K0170WQ pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDB8D055A3D5E3A0D4&compId=WNSC2M1K0170WQ.pdf?ci_sign=d1d8e4445852bceaf5de17a3a44faf4d953af0dd
Hersteller: WeEn Semiconductors
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 5A; Idm: 20A; 79W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.7kV
Drain current: 5A
Pulsed drain current: 20A
Power dissipation: 79W
Case: TO247-3
Gate-source voltage: -10...22V
On-state resistance: 1Ω
Mounting: THT
Gate charge: 12nC
Kind of package: tube
Kind of channel: enhancement
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WNSC2M20120B76J pVersion=0046&contRep=ZT&docId=005056AB281E1EDF93E3CB6481A200D6&compId=WNSC2M20120B76J.pdf?ci_sign=7ea4931c87d847bdf0dca7a50c82cac3c19fc0df
Hersteller: WeEn Semiconductors
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 109.2A; Idm: 300A; 789W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 109.2A
Pulsed drain current: 300A
Power dissipation: 789W
Case: TO263-7
Gate-source voltage: -4...18V
On-state resistance: 27.6mΩ
Mounting: SMD
Gate charge: 215nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
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BYV42E-200,127 pVersion=0046&contRep=ZT&docId=005056AB752F1EE890C1AC1AD6BEB3D3&compId=BYV42E_SERIES.pdf?ci_sign=25d73585ef229cf655605349d37e560fd442a3c2 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36
BYV42E-200,127
Hersteller: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 15Ax2; tube; Ifsm: 150A; SOT78,TO220AB
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 15A x2
Reverse recovery time: 28ns
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Case: SOT78; TO220AB
Max. forward voltage: 1V
Max. load current: 30A
Max. forward impulse current: 150A
Kind of package: tube
Heatsink thickness: max. 1.3mm
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WNSC5D20650W6Q pVersion=0046&contRep=ZT&docId=005056AB281E1EDF93E65101269260D6&compId=WNSC5D20650W6Q.pdf?ci_sign=63527af6dc2645ad87798c743de07c788f2a46a9
Hersteller: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO247-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A
Semiconductor structure: single diode
Case: TO247-2
Max. forward impulse current: 100A
Kind of package: tube
Max. load current: 40A
Produkt ist nicht verfügbar
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BYC8X-600P,127 byc8x-600p.pdf
BYC8X-600P,127
Hersteller: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8A; tube; Ifsm: 100A; SOD113,TO220FP-2
Semiconductor structure: single diode
Case: SOD113; TO220FP-2
Type of diode: rectifying
Kind of package: tube
Mounting: THT
Reverse recovery time: 18ns
Max. forward voltage: 1.9V
Max. off-state voltage: 0.6kV
Load current: 8A
Max. forward impulse current: 100A
auf Bestellung 752 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
65+1.12 EUR
81+0.89 EUR
91+0.79 EUR
172+0.42 EUR
182+0.39 EUR
Mindestbestellmenge: 65
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WNS20H100CBJ pVersion=0046&contRep=ZT&docId=005056AB90B41EDB9AF5F3408E36E0C7&compId=WNS20H100CB.pdf?ci_sign=665aea423c8dfc437efe54b5579a3393ca7539b8
WNS20H100CBJ
Hersteller: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 100V; 10Ax2; reel,tape
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 100V
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.7V
Max. load current: 20A
Max. forward impulse current: 180A
Kind of package: reel; tape
auf Bestellung 479 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
58+1.24 EUR
79+0.91 EUR
167+0.43 EUR
176+0.41 EUR
Mindestbestellmenge: 58
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BYC30MW-650PT2Q pVersion=0046&contRep=ZT&docId=005056AB281E1EDF9FFB7F9103D9A0D6&compId=BYC30MW-650PT2.pdf?ci_sign=fa57dab85c14887008bc67828085f123d00b04ee
Hersteller: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 650V; 30A; tube; Ifsm: 270A; TO247-2; 20ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 650V
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 270A
Case: TO247-2
Max. forward voltage: 1.8V
Max. load current: 60A
Reverse recovery time: 20ns
Produkt ist nicht verfügbar
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BTA2008-800E,412 bta2008-600e.pdf
BTA2008-800E,412
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 0.8A; TO92; Igt: 10mA; Ifsm: 9A; 3Q,Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Case: TO92
Type of thyristor: triac
Gate current: 10mA
Max. load current: 0.8A
Max. forward impulse current: 9A
Max. off-state voltage: 0.8kV
Technology: 3Q; Hi-Com
Kind of package: bulk
Produkt ist nicht verfügbar
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BTA2008-1000DNML bta2008-1000dn.pdf
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 1kV; 0.8A; TO92; Igt: 5mA; Ifsm: 9A; 3Q,Hi-Com
Features of semiconductor devices: logic level; sensitive gate
Mounting: THT
Case: TO92
Type of thyristor: triac
Gate current: 5mA
Max. load current: 0.8A
Max. forward impulse current: 9A
Max. off-state voltage: 1kV
Technology: 3Q; Hi-Com
Kind of package: Ammo Pack
Produkt ist nicht verfügbar
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BTA2008-800D,412 bta2008-600d.pdf
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 0.8A; TO92; Igt: 5mA; Ifsm: 9A; 3Q,Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Case: TO92
Type of thyristor: triac
Gate current: 5mA
Max. load current: 0.8A
Max. forward impulse current: 9A
Max. off-state voltage: 0.6kV
Technology: 3Q; Hi-Com
Kind of package: bulk
Produkt ist nicht verfügbar
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BYT79-500,127 byt79-500.pdf
BYT79-500,127
Hersteller: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 500V; 14A; tube; Ifsm: 130A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 500V
Load current: 14A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 130A
Case: SOD59; TO220AC
Max. forward voltage: 0.9V
Reverse recovery time: 60ns
auf Bestellung 777 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
85+0.84 EUR
104+0.69 EUR
125+0.57 EUR
138+0.52 EUR
Mindestbestellmenge: 85
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BTA420-800CT,127 bta420-800ct.pdf
BTA420-800CT,127
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 20A; TO220AB; Igt: 35mA; Ifsm: 200A; 3Q,Hi-Com
Mounting: THT
Features of semiconductor devices: high temperature; sensitive gate
Kind of package: tube
Case: TO220AB
Type of thyristor: triac
Gate current: 35mA
Max. load current: 20A
Max. forward impulse current: 200A
Max. off-state voltage: 0.8kV
Technology: 3Q; Hi-Com
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BTA420X-800CT,127 bta420x-800ct.pdf
BTA420X-800CT,127
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 20A; TO220FP; Igt: 35mA; Ifsm: 200A; 3Q,Hi-Com
Mounting: THT
Features of semiconductor devices: high temperature; sensitive gate
Kind of package: tube
Case: TO220FP
Type of thyristor: triac
Gate current: 35mA
Max. load current: 20A
Max. forward impulse current: 200A
Max. off-state voltage: 0.8kV
Technology: 3Q; Hi-Com
Produkt ist nicht verfügbar
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BTA420-800BT,127 bta420-800bt.pdf
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 20A; TO220AB; Igt: 50mA; Ifsm: 200A; 3Q,Hi-Com
Mounting: THT
Features of semiconductor devices: high temperature; sensitive gate
Kind of package: tube
Case: TO220AB
Type of thyristor: triac
Gate current: 50mA
Max. load current: 20A
Max. forward impulse current: 200A
Max. off-state voltage: 0.8kV
Technology: 3Q; Hi-Com
Produkt ist nicht verfügbar
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BTA420Y-800BT,127 bta420y-800bt.pdf
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 20A; TO220AB; Igt: 50mA; Ifsm: 220A; 3Q,Hi-Com
Mounting: THT
Features of semiconductor devices: high temperature; sensitive gate
Kind of package: tube
Case: TO220AB
Type of thyristor: triac
Gate current: 50mA
Max. load current: 20A
Max. forward impulse current: 220A
Max. off-state voltage: 0.8kV
Technology: 3Q; Hi-Com
Produkt ist nicht verfügbar
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