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BTA201-600E/L01EP WeEn Semiconductors bta201-600e.pdf Category: Triacs
Description: Triac; 600V; 1A; TO92; Igt: 10mA; Ifsm: 12.5A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 1A
Case: TO92
Gate current: 10mA
Max. forward impulse current: 12.5A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
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BTA201-800B,112 BTA201-800B,112 WeEn Semiconductors bta201-800e.pdf Category: Triacs
Description: Triac; 800V; 1A; TO92; Igt: 50mA; Ifsm: 12.5A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 1A
Case: TO92
Gate current: 50mA
Max. forward impulse current: 12.5A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Produkt ist nicht verfügbar
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BTA201-800E,112 BTA201-800E,112 WeEn Semiconductors bta201-800e.pdf Category: Triacs
Description: Triac; 800V; 1A; TO92; Igt: 10mA; Ifsm: 12.5A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 1A
Case: TO92
Gate current: 10mA
Max. forward impulse current: 12.5A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Produkt ist nicht verfügbar
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BTA201-800E,116 BTA201-800E,116 WeEn Semiconductors bta201-800e.pdf Category: Triacs
Description: Triac; 800V; 1A; TO92; Igt: 10mA; Ifsm: 12.5A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 1A
Case: TO92
Gate current: 10mA
Max. forward impulse current: 12.5A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: reel; tape
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BTA201-800E,412 BTA201-800E,412 WeEn Semiconductors bta201-800e.pdf Category: Triacs
Description: Triac; 800V; 1A; TO92; Igt: 10mA; Ifsm: 12.5A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 1A
Case: TO92
Gate current: 10mA
Max. forward impulse current: 12.5A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: bulk
Produkt ist nicht verfügbar
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BTA201-800ER,112 BTA201-800ER,112 WeEn Semiconductors BTA201-800ER_112.pdf bta201-800er.pdf Category: Triacs
Description: Triac; 800V; 1A; TO92; Igt: 10mA; Ifsm: 12.5A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 1A
Case: TO92
Gate current: 10mA
Max. forward impulse current: 12.5A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
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BTA201-800ER,116 BTA201-800ER,116 WeEn Semiconductors bta201-800er.pdf Category: Triacs
Description: Triac; 800V; 1A; TO92; Igt: 10mA; Ifsm: 12.5A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 1A
Case: TO92
Gate current: 10mA
Max. forward impulse current: 12.5A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: reel; tape
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BTA201-800ER,126 BTA201-800ER,126 WeEn Semiconductors bta201-800er.pdf Category: Triacs
Description: Triac; 800V; 1A; TO92; Igt: 10mA; Ifsm: 12.5A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 1A
Case: TO92
Gate current: 10mA
Max. forward impulse current: 12.5A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: Ammo Pack
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BTA201-800ER,412 BTA201-800ER,412 WeEn Semiconductors bta201-800er.pdf Category: Triacs
Description: Triac; 800V; 1A; TO92; Igt: 10mA; Ifsm: 12.5A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 1A
Case: TO92
Gate current: 10mA
Max. forward impulse current: 12.5A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: bulk
Produkt ist nicht verfügbar
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ACTT6X-800E,127 ACTT6X-800E,127 WeEn Semiconductors ACTT6X-800E.pdf _ween_psg2020.pdf Category: Thyristors - others
Description: Thyristor: AC switch; 800V; Ifmax: 6A; Igt: 10mA; TO220FP; THT; tube
Case: TO220FP
Mounting: THT
Gate current: 10mA
Max. load current: 6A
Max. off-state voltage: 0.8kV
Type of thyristor: AC switch
Kind of package: tube
auf Bestellung 552 Stücke:
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75+0.96 EUR
111+0.64 EUR
134+0.53 EUR
500+0.46 EUR
Mindestbestellmenge: 75
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ACTT6B-800E,118
+1
 		ACTT6B-800E,118 WeEn Semiconductors ACTT6B-800E.pdf Category: Thyristors - others
Description: Thyristor: AC switch; 800V; Ifmax: 6A; Igt: 10mA; D2PAK; SMD
Case: D2PAK
Mounting: SMD
Gate current: 10mA
Max. load current: 6A
Max. off-state voltage: 0.8kV
Type of thyristor: AC switch
Kind of package: reel; tape
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67+1.07 EUR
82+0.88 EUR
113+0.64 EUR
Mindestbestellmenge: 67
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WNSC16650CWQ WNSC16650CWQ WeEn Semiconductors WNSC16650CW_0.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8Ax2; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 1.7V
Max. load current: 16A
Max. forward impulse current: 48A
Kind of package: tube
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NXPSC166506Q NXPSC166506Q WeEn Semiconductors NXPSC166506Q.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 16A; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 16A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 1.7V
Max. forward impulse current: 96A
Kind of package: tube
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NXPSC16650B6J NXPSC16650B6J WeEn Semiconductors NXPSC16650B6J.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SiC; SMD; 650V; 16A; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 16A
Semiconductor structure: single diode
Case: D2PAK
Max. forward voltage: 1.7V
Max. forward impulse current: 96A
Kind of package: reel; tape
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BT149D,126 BT149D,126 WeEn Semiconductors BT149D.pdf _ween_psg2020.pdf Category: SMD/THT thyristors
Description: Thyristor; 400V; Ifmax: 0.8A; 0.5A; Igt: 200uA; TO92; THT; Ammo Pack
Type of thyristor: thyristor
Max. off-state voltage: 0.4kV
Max. load current: 0.8A
Load current: 0.5A
Gate current: 0.2mA
Case: TO92
Mounting: THT
Kind of package: Ammo Pack
Max. forward impulse current: 8A
Turn-on time: 2µs
auf Bestellung 490 Stücke:
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148+0.49 EUR
222+0.32 EUR
379+0.19 EUR
Mindestbestellmenge: 148
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BYC8-1200PQ BYC8-1200PQ WeEn Semiconductors byc8-1200p.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 8A; tube; Ifsm: 100A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 8A
Reverse recovery time: 46ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SOD59; TO220AC
Kind of package: tube
Max. forward voltage: 2V
Max. forward impulse current: 100A
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WNSC12650T6J WeEn Semiconductors WNSC12650T_0.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN8x8N; SiC; SMD; 650V; 12A; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 12A
Semiconductor structure: single diode
Case: DFN8x8N
Max. forward voltage: 1.8V
Max. forward impulse current: 57A
Kind of package: reel; tape
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WNSC12650WQ WNSC12650WQ WeEn Semiconductors WNSC12650W_2.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 12A; TO247-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 12A
Semiconductor structure: single diode
Case: TO247-2
Max. forward voltage: 1.7V
Max. forward impulse current: 72A
Kind of package: tube
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NXPSC126506Q NXPSC126506Q WeEn Semiconductors en Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 12A; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 12A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 1.7V
Max. forward impulse current: 72A
Kind of package: tube
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NXPSC12650B6J NXPSC12650B6J WeEn Semiconductors NXPSC12650B6J.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SiC; SMD; 650V; 12A; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 12A
Semiconductor structure: single diode
Case: D2PAK
Max. forward voltage: 1.7V
Max. forward impulse current: 72A
Kind of package: reel; tape
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WNSC5D12650Y6Q WeEn Semiconductors WNSC5D12650Y6Q.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 12A; TO220ACIns; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 12A
Semiconductor structure: single diode
Case: TO220ACIns
Max. load current: 24A
Max. forward impulse current: 72A
Kind of package: tube
Produkt ist nicht verfügbar
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BTA416B-800BTJ WeEn Semiconductors Category: Unclassified
Description: BTA416B-800BTJ
auf Bestellung 4800 Stücke:
Lieferzeit 14-21 Tag (e)
1600+0.56 EUR
Mindestbestellmenge: 1600
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NCR100W-12LX WeEn Semiconductors ncr100w-12l.pdf Category: SMD/THT thyristors
Description: Thyristor; 1kV; Ifmax: 1.1A; 0.8A; Igt: 50uA; SOT223; SMD; reel,tape
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Type of thyristor: thyristor
Turn-on time: 2µs
Gate current: 50µA
Load current: 0.8A
Max. load current: 1.1A
Max. forward impulse current: 11A
Max. off-state voltage: 1kV
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MUR320J MUR320J WeEn Semiconductors MUR320.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 3A; 35ns; SMC; Ufmax: 875mV; Ifsm: 160A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 3A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SMC
Max. forward voltage: 0.875V
Kind of package: reel; tape
Max. forward impulse current: 160A
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BYV29-500.127 BYV29-500.127 WeEn Semiconductors BYV29-500.pdf _ween_psg2020.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 500V; 9A; tube; Ifsm: 110A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 500V
Load current: 9A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 110A
Case: SOD59; TO220AC
Max. forward voltage: 0.9V
Heatsink thickness: max. 1.3mm
Reverse recovery time: 60ns
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BYV29-500,127 BYV29-500,127 WeEn Semiconductors BYV29-500.pdf _ween_psg2020.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 500V; 9A; tube; Ifsm: 110A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 500V
Load current: 9A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 110A
Case: SOD59; TO220AC
Max. forward voltage: 0.9V
Heatsink thickness: max. 1.3mm
Reverse recovery time: 60ns
auf Bestellung 1154 Stücke:
Lieferzeit 14-21 Tag (e)
77+0.93 EUR
102+0.71 EUR
119+0.6 EUR
143+0.5 EUR
Mindestbestellmenge: 77
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BYV79E-200.127 BYV79E-200.127 WeEn Semiconductors BYV79E-200.pdf _ween_psg2020.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 14A; tube; Ifsm: 160A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 14A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 160A
Case: SOD59; TO220AC
Max. forward voltage: 0.9V
Heatsink thickness: max. 1.3mm
Reverse recovery time: 30ns
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BYV79E-200,127 BYV79E-200,127 WeEn Semiconductors BYV79E-200.pdf _ween_psg2020.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 14A; tube; Ifsm: 160A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 14A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 160A
Case: SOD59; TO220AC
Max. forward voltage: 0.83V
Heatsink thickness: max. 1.3mm
Reverse recovery time: 30ns
auf Bestellung 203 Stücke:
Lieferzeit 14-21 Tag (e)
61+1.19 EUR
81+0.89 EUR
96+0.75 EUR
119+0.6 EUR
133+0.54 EUR
Mindestbestellmenge: 61
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MCR08BT1,115 MCR08BT1,115 WeEn Semiconductors MCR08BT1.pdf _ween_psg2020.pdf Category: SMD/THT thyristors
Description: Thyristor; 200V; Ifmax: 0.8A; 0.5A; Igt: 50uA; SOT223; SMD; reel,tape
Kind of package: reel; tape
Case: SOT223
Mounting: SMD
Turn-on time: 2µs
Gate current: 50µA
Max. load current: 0.8A
Load current: 0.5A
Max. forward impulse current: 8A
Max. off-state voltage: 200V
Type of thyristor: thyristor
auf Bestellung 1721 Stücke:
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167+0.43 EUR
196+0.37 EUR
302+0.24 EUR
500+0.17 EUR
1000+0.15 EUR
Mindestbestellmenge: 167
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SMDJ40AJ WeEn Semiconductors SMDJ Series.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 44.8÷48.8V; 46.5A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 40V
Breakdown voltage: 44.8...48.8V
Max. forward impulse current: 46.5A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMDJ
Kind of package: reel; tape
Produkt ist nicht verfügbar
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BTA225-600B,127 BTA225-600B,127 WeEn Semiconductors BTA225-600B.pdf Category: Triacs
Description: Triac; 600V; 25A; TO220AB; Igt: 50mA; Ifsm: 190A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 25A
Case: TO220AB
Gate current: 50mA
Max. forward impulse current: 190A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
auf Bestellung 1056 Stücke:
Lieferzeit 14-21 Tag (e)
48+1.52 EUR
59+1.23 EUR
65+1.12 EUR
100+1.07 EUR
250+1 EUR
500+0.96 EUR
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BTA225B-800B,118 BTA225B-800B,118 WeEn Semiconductors BTA225B-800B.pdf _ween_psg2020.pdf Category: Triacs
Description: Triac; 800V; 25A; D2PAK; Igt: 50mA; Ifsm: 190A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 25A
Case: D2PAK
Gate current: 50mA
Max. forward impulse current: 190A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
auf Bestellung 228 Stücke:
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30+2.46 EUR
54+1.33 EUR
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BTA225-800B,127 BTA225-800B,127 WeEn Semiconductors BTA225-800B.pdf _ween_psg2020.pdf Category: Triacs
Description: Triac; 800V; 25A; TO220AB; Igt: 50mA; Ifsm: 190A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 25A
Case: TO220AB
Gate current: 50mA
Max. forward impulse current: 190A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
auf Bestellung 134 Stücke:
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27+2.67 EUR
39+1.84 EUR
50+1.46 EUR
100+1.32 EUR
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BTA225-600BT,127 BTA225-600BT,127 WeEn Semiconductors bta225-600bt.pdf Category: Triacs
Description: Triac; 600V; 25A; TO220AB; Igt: 50mA; Ifsm: 190A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 25A
Case: TO220AB
Gate current: 50mA
Max. forward impulse current: 190A
Technology: 3Q; Hi-Com
Features of semiconductor devices: high temperature; sensitive gate
Mounting: THT
Kind of package: tube
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BTA225B-800BTJ BTA225B-800BTJ WeEn Semiconductors bta225b-800bt.pdf Category: Triacs
Description: Triac; 800V; 25A; D2PAK; Igt: 50mA; Ifsm: 190A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 25A
Case: D2PAK
Gate current: 50mA
Max. forward impulse current: 190A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
Produkt ist nicht verfügbar
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BYC15-600,127 BYC15-600,127 WeEn Semiconductors byc15-600.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 15A; tube; Ifsm: 200A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 15A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Kind of package: tube
Max. forward impulse current: 200A
Case: SOD59; TO220AC
Max. forward voltage: 1.4V
Reverse recovery time: 19ns
auf Bestellung 328 Stücke:
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90+0.8 EUR
106+0.67 EUR
119+0.6 EUR
Mindestbestellmenge: 90
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BYC15-600PQ BYC15-600PQ WeEn Semiconductors BYC15-600P.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 15A; tube; Ifsm: 180A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 15A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 180A
Case: SOD59; TO220AC
Max. forward voltage: 2V
Reverse recovery time: 18ns
Max. load current: 30A
auf Bestellung 776 Stücke:
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71+1.02 EUR
123+0.58 EUR
129+0.56 EUR
Mindestbestellmenge: 71
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BT1308W-600D,115 BT1308W-600D,115 WeEn Semiconductors BT1308W-600D.pdf _ween_psg2020.pdf Category: Triacs
Description: Triac; 600V; 0.8A; SOT223; Igt: 5/7mA; Ifsm: 9A; 4Q; sensitive gate
Features of semiconductor devices: sensitive gate
Kind of package: reel; tape
Gate current: 5/7mA
Max. load current: 0.8A
Max. forward impulse current: 9A
Max. off-state voltage: 0.6kV
Technology: 4Q
Type of thyristor: triac
Case: SOT223
Mounting: SMD
auf Bestellung 512 Stücke:
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143+0.5 EUR
186+0.39 EUR
218+0.33 EUR
363+0.2 EUR
500+0.14 EUR
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BT1308W-400D,115 BT1308W-400D,115 WeEn Semiconductors bt1308w-400d.pdf Category: Triacs
Description: Triac; 400V; 0.8A; SOT223; Igt: 5/7mA; Ifsm: 9A; 4Q; sensitive gate
Features of semiconductor devices: sensitive gate
Kind of package: reel; tape
Gate current: 5/7mA
Max. load current: 0.8A
Max. forward impulse current: 9A
Max. off-state voltage: 0.4kV
Technology: 4Q
Type of thyristor: triac
Case: SOT223
Mounting: SMD
auf Bestellung 1010 Stücke:
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136+0.53 EUR
177+0.4 EUR
285+0.25 EUR
345+0.21 EUR
500+0.18 EUR
1000+0.16 EUR
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BTA216B-600D,118 BTA216B-600D,118 WeEn Semiconductors bta216b-600e.pdf Category: Triacs
Description: Triac; 600V; 16A; D2PAK; Igt: 5mA; Ifsm: 140A; 3Q,Hi-Com
Features of semiconductor devices: sensitive gate
Kind of package: reel; tape
Gate current: 5mA
Max. load current: 16A
Max. forward impulse current: 140A
Max. off-state voltage: 0.6kV
Technology: 3Q; Hi-Com
Type of thyristor: triac
Case: D2PAK
Mounting: SMD
auf Bestellung 616 Stücke:
Lieferzeit 14-21 Tag (e)
61+1.19 EUR
67+1.07 EUR
75+0.96 EUR
100+0.84 EUR
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BTA425X-800BQ BTA425X-800BQ WeEn Semiconductors bta425x-800b.pdf Category: Triacs
Description: Triac; 800V; 25A; TO220FP; Igt: 50mA; Ifsm: 250A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 25A
Case: TO220FP
Gate current: 50mA
Max. forward impulse current: 250A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
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BTA425X-800BT/L02Q WeEn Semiconductors bta425x-800bt.pdf Category: Triacs
Description: Triac; 800V; 25A; TO220FP; Igt: 50mA; Ifsm: 275A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 25A
Case: TO220FP
Gate current: 50mA
Max. forward impulse current: 275A
Technology: 3Q; Hi-Com
Features of semiconductor devices: high temperature
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
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BTA425Y-800CTQ BTA425Y-800CTQ WeEn Semiconductors bta425y-800ct.pdf Category: Triacs
Description: Triac; 800V; 25A; TO220AB; Igt: 35mA; Ifsm: 250A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 25A
Case: TO220AB
Gate current: 35mA
Max. forward impulse current: 250A
Technology: 3Q; Hi-Com
Features of semiconductor devices: high temperature; sensitive gate
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
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WMSC010H12B1P6T WeEn Semiconductors WMSC010H12B1P6T.pdf Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 107A; Press-in PCB; 152W
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 107A
Topology: MOSFET half-bridge; NTC thermistor
Electrical mounting: Press-in PCB
On-state resistance: 10mΩ
Pulsed drain current: 210A
Power dissipation: 152W
Technology: SiC
Gate-source voltage: -4...18V
Mechanical mounting: screw
Produkt ist nicht verfügbar
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SOD20AX WeEn Semiconductors SOD Series.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 200W; 22.41÷24.28V; 6.2A; unidirectional; SOD123F
Type of diode: TVS
Peak pulse power dissipation: 0.2kW
Max. off-state voltage: 20V
Breakdown voltage: 22.41...24.28V
Max. forward impulse current: 6.2A
Semiconductor structure: unidirectional
Case: SOD123F
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Produkt ist nicht verfügbar
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P4SOD33CAX WeEn Semiconductors P4SOD.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 36.7÷40.6V; 7.5A; bidirectional; SOD123F; P4SOD
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 7.5A
Semiconductor structure: bidirectional
Case: SOD123F
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P4SOD
Produkt ist nicht verfügbar
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P4SOD36AX WeEn Semiconductors P4SOD.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 40÷44.2V; 6.2A; unidirectional; SOD123F; P4SOD
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 36V
Breakdown voltage: 40...44.2V
Max. forward impulse current: 6.2A
Semiconductor structure: unidirectional
Case: SOD123F
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P4SOD
Produkt ist nicht verfügbar
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P4SOD58AX P4SOD58AX WeEn Semiconductors P4SOD.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 64.4÷71.2V; 4.3A; unidirectional; SOD123F; P4SOD
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...71.2V
Max. forward impulse current: 4.3A
Semiconductor structure: unidirectional
Case: SOD123F
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P4SOD
Produkt ist nicht verfügbar
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BTA312B-800B,118 BTA312B-800B,118 WeEn Semiconductors bta312b-800b.pdf Category: Triacs
Description: Triac; 800V; 12A; D2PAK; Igt: 50mA; Ifsm: 100A; 3Q,Hi-Com
Technology: 3Q; Hi-Com
Type of thyristor: triac
Gate current: 50mA
Max. load current: 12A
Max. off-state voltage: 0.8kV
Max. forward impulse current: 100A
Case: D2PAK
Mounting: SMD
Features of semiconductor devices: sensitive gate
Kind of package: reel; tape
auf Bestellung 754 Stücke:
Lieferzeit 14-21 Tag (e)
74+0.97 EUR
82+0.88 EUR
93+0.77 EUR
101+0.71 EUR
Mindestbestellmenge: 74
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BTA312B-800C,118 BTA312B-800C,118 WeEn Semiconductors bta312b-800c.pdf Category: Triacs
Description: Triac; 800V; 12A; D2PAK; Igt: 35mA; Ifsm: 100A; 3Q,Hi-Com
Technology: 3Q; Hi-Com
Type of thyristor: triac
Gate current: 35mA
Max. load current: 12A
Max. off-state voltage: 0.8kV
Max. forward impulse current: 100A
Case: D2PAK
Mounting: SMD
Features of semiconductor devices: sensitive gate
Kind of package: reel; tape
auf Bestellung 795 Stücke:
Lieferzeit 14-21 Tag (e)
45+1.62 EUR
67+1.07 EUR
100+0.8 EUR
500+0.68 EUR
Mindestbestellmenge: 45
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BTA312B-600CT,118 BTA312B-600CT,118 WeEn Semiconductors BTA312B-600CT.pdf _ween_psg2020.pdf Category: Triacs
Description: Triac; 600V; 12A; D2PAK; Igt: 35mA; Ifsm: 100A; 3Q,Hi-Com
Technology: 3Q; Hi-Com
Type of thyristor: triac
Gate current: 35mA
Max. load current: 12A
Max. off-state voltage: 0.6kV
Max. forward impulse current: 100A
Case: D2PAK
Mounting: SMD
Features of semiconductor devices: high temperature; sensitive gate
Kind of package: reel; tape
auf Bestellung 478 Stücke:
Lieferzeit 14-21 Tag (e)
38+1.89 EUR
60+1.21 EUR
100+0.82 EUR
250+0.74 EUR
Mindestbestellmenge: 38
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BTA312B-600C,118 BTA312B-600C,118 WeEn Semiconductors bta312b-600c.pdf Category: Triacs
Description: Triac; 600V; 12A; D2PAK; Igt: 35mA; Ifsm: 100A; 3Q,Hi-Com
Technology: 3Q; Hi-Com
Type of thyristor: triac
Gate current: 35mA
Max. load current: 12A
Max. off-state voltage: 0.6kV
Max. forward impulse current: 100A
Case: D2PAK
Mounting: SMD
Features of semiconductor devices: sensitive gate
Kind of package: reel; tape
Produkt ist nicht verfügbar
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BTA312B-600E,118 BTA312B-600E,118 WeEn Semiconductors bta312b-600e.pdf Category: Triacs
Description: Triac; 600V; 12A; D2PAK; Igt: 10mA; Ifsm: 100A; 3Q,Hi-Com
Technology: 3Q; Hi-Com
Type of thyristor: triac
Gate current: 10mA
Max. load current: 12A
Max. off-state voltage: 0.6kV
Max. forward impulse current: 100A
Case: D2PAK
Mounting: SMD
Features of semiconductor devices: sensitive gate
Kind of package: reel; tape
Produkt ist nicht verfügbar
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BTA312B-600D,118 BTA312B-600D,118 WeEn Semiconductors _ween_psg2020.pdf Category: Triacs
Description: Triac; 600V; 12A; D2PAK; Igt: 5mA; Ifsm: 100A; 3Q,Hi-Com
Technology: 3Q; Hi-Com
Type of thyristor: triac
Gate current: 5mA
Max. load current: 12A
Max. off-state voltage: 0.6kV
Max. forward impulse current: 100A
Case: D2PAK
Mounting: SMD
Features of semiconductor devices: sensitive gate
Kind of package: reel; tape
Produkt ist nicht verfügbar
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WMSC030H12B1P6T WeEn Semiconductors WMSC030H12B1P6T.pdf Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 53A; Press-in PCB; Idm: 100A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 53A
Topology: MOSFET half-bridge; NTC thermistor
Electrical mounting: Press-in PCB
On-state resistance: 30mΩ
Pulsed drain current: 100A
Power dissipation: 111W
Technology: SiC
Gate-source voltage: -4...18V
Mechanical mounting: screw
Produkt ist nicht verfügbar
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NXPSC206506Q NXPSC206506Q WeEn Semiconductors nxpsc20650.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 1.7V
Max. forward impulse current: 100A
Kind of package: tube
Produkt ist nicht verfügbar
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NXPSC20650W-AQ NXPSC20650W-AQ WeEn Semiconductors NXPSC20650W-A.pdf _ween_psg2020.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 2.1V
Max. forward impulse current: 50A
Kind of package: tube
Max. load current: 20A
Application: automotive industry
Produkt ist nicht verfügbar
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NXPSC20650W6Q NXPSC20650W6Q WeEn Semiconductors nxpsc20650w.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 1.7V
Max. forward impulse current: 50A
Kind of package: tube
Max. load current: 20A
Produkt ist nicht verfügbar
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WNSC6D20650B6J WeEn Semiconductors WNSC6D20650B6J.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SiC; SMD; 650V; 20A; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 20A
Semiconductor structure: single diode
Case: D2PAK
Max. forward voltage: 1.8V
Max. forward impulse current: 120A
Kind of package: reel; tape
Max. load current: 40A
Produkt ist nicht verfügbar
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NXPLQSC20650W6Q NXPLQSC20650W6Q WeEn Semiconductors nxplqsc20650w.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 1.85V
Max. forward impulse current: 48A
Kind of package: tube
Max. load current: 20A
Produkt ist nicht verfügbar
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BTA201-600E/L01EP bta201-600e.pdf
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 1A; TO92; Igt: 10mA; Ifsm: 12.5A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 1A
Case: TO92
Gate current: 10mA
Max. forward impulse current: 12.5A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Produkt ist nicht verfügbar
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BTA201-800B,112 bta201-800e.pdf
BTA201-800B,112
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 1A; TO92; Igt: 50mA; Ifsm: 12.5A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 1A
Case: TO92
Gate current: 50mA
Max. forward impulse current: 12.5A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Produkt ist nicht verfügbar
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BTA201-800E,112 bta201-800e.pdf
BTA201-800E,112
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 1A; TO92; Igt: 10mA; Ifsm: 12.5A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 1A
Case: TO92
Gate current: 10mA
Max. forward impulse current: 12.5A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Produkt ist nicht verfügbar
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BTA201-800E,116 bta201-800e.pdf
BTA201-800E,116
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 1A; TO92; Igt: 10mA; Ifsm: 12.5A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 1A
Case: TO92
Gate current: 10mA
Max. forward impulse current: 12.5A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: reel; tape
Produkt ist nicht verfügbar
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BTA201-800E,412 bta201-800e.pdf
BTA201-800E,412
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 1A; TO92; Igt: 10mA; Ifsm: 12.5A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 1A
Case: TO92
Gate current: 10mA
Max. forward impulse current: 12.5A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: bulk
Produkt ist nicht verfügbar
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BTA201-800ER,112 BTA201-800ER_112.pdf bta201-800er.pdf
BTA201-800ER,112
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 1A; TO92; Igt: 10mA; Ifsm: 12.5A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 1A
Case: TO92
Gate current: 10mA
Max. forward impulse current: 12.5A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Produkt ist nicht verfügbar
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BTA201-800ER,116 bta201-800er.pdf
BTA201-800ER,116
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 1A; TO92; Igt: 10mA; Ifsm: 12.5A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 1A
Case: TO92
Gate current: 10mA
Max. forward impulse current: 12.5A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: reel; tape
Produkt ist nicht verfügbar
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BTA201-800ER,126 bta201-800er.pdf
BTA201-800ER,126
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 1A; TO92; Igt: 10mA; Ifsm: 12.5A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 1A
Case: TO92
Gate current: 10mA
Max. forward impulse current: 12.5A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: Ammo Pack
Produkt ist nicht verfügbar
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BTA201-800ER,412 bta201-800er.pdf
BTA201-800ER,412
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 1A; TO92; Igt: 10mA; Ifsm: 12.5A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 1A
Case: TO92
Gate current: 10mA
Max. forward impulse current: 12.5A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: bulk
Produkt ist nicht verfügbar
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ACTT6X-800E,127 ACTT6X-800E.pdf _ween_psg2020.pdf
ACTT6X-800E,127
Hersteller: WeEn Semiconductors
Category: Thyristors - others
Description: Thyristor: AC switch; 800V; Ifmax: 6A; Igt: 10mA; TO220FP; THT; tube
Case: TO220FP
Mounting: THT
Gate current: 10mA
Max. load current: 6A
Max. off-state voltage: 0.8kV
Type of thyristor: AC switch
Kind of package: tube
auf Bestellung 552 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
75+0.96 EUR
111+0.64 EUR
134+0.53 EUR
500+0.46 EUR
Mindestbestellmenge: 75
Im Einkaufswagen  Stück im Wert von  UAH
ACTT6B-800E,118 ACTT6B-800E.pdf
ACTT6B-800E,118
+1
Hersteller: WeEn Semiconductors
Category: Thyristors - others
Description: Thyristor: AC switch; 800V; Ifmax: 6A; Igt: 10mA; D2PAK; SMD
Case: D2PAK
Mounting: SMD
Gate current: 10mA
Max. load current: 6A
Max. off-state voltage: 0.8kV
Type of thyristor: AC switch
Kind of package: reel; tape
auf Bestellung 321 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
67+1.07 EUR
82+0.88 EUR
113+0.64 EUR
Mindestbestellmenge: 67
Im Einkaufswagen  Stück im Wert von  UAH
WNSC16650CWQ WNSC16650CW_0.pdf
WNSC16650CWQ
Hersteller: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8Ax2; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 1.7V
Max. load current: 16A
Max. forward impulse current: 48A
Kind of package: tube
Produkt ist nicht verfügbar
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NXPSC166506Q NXPSC166506Q.pdf
NXPSC166506Q
Hersteller: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 16A; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 16A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 1.7V
Max. forward impulse current: 96A
Kind of package: tube
Produkt ist nicht verfügbar
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NXPSC16650B6J NXPSC16650B6J.pdf
NXPSC16650B6J
Hersteller: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SiC; SMD; 650V; 16A; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 16A
Semiconductor structure: single diode
Case: D2PAK
Max. forward voltage: 1.7V
Max. forward impulse current: 96A
Kind of package: reel; tape
Produkt ist nicht verfügbar
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BT149D,126 BT149D.pdf _ween_psg2020.pdf
BT149D,126
Hersteller: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 400V; Ifmax: 0.8A; 0.5A; Igt: 200uA; TO92; THT; Ammo Pack
Type of thyristor: thyristor
Max. off-state voltage: 0.4kV
Max. load current: 0.8A
Load current: 0.5A
Gate current: 0.2mA
Case: TO92
Mounting: THT
Kind of package: Ammo Pack
Max. forward impulse current: 8A
Turn-on time: 2µs
auf Bestellung 490 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
148+0.49 EUR
222+0.32 EUR
379+0.19 EUR
Mindestbestellmenge: 148
Im Einkaufswagen  Stück im Wert von  UAH
BYC8-1200PQ byc8-1200p.pdf
BYC8-1200PQ
Hersteller: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 8A; tube; Ifsm: 100A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 8A
Reverse recovery time: 46ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SOD59; TO220AC
Kind of package: tube
Max. forward voltage: 2V
Max. forward impulse current: 100A
Produkt ist nicht verfügbar
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WNSC12650T6J WNSC12650T_0.pdf
Hersteller: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN8x8N; SiC; SMD; 650V; 12A; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 12A
Semiconductor structure: single diode
Case: DFN8x8N
Max. forward voltage: 1.8V
Max. forward impulse current: 57A
Kind of package: reel; tape
Produkt ist nicht verfügbar
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WNSC12650WQ WNSC12650W_2.pdf
WNSC12650WQ
Hersteller: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 12A; TO247-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 12A
Semiconductor structure: single diode
Case: TO247-2
Max. forward voltage: 1.7V
Max. forward impulse current: 72A
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NXPSC126506Q en
NXPSC126506Q
Hersteller: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 12A; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 12A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 1.7V
Max. forward impulse current: 72A
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NXPSC12650B6J NXPSC12650B6J.pdf
NXPSC12650B6J
Hersteller: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SiC; SMD; 650V; 12A; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 12A
Semiconductor structure: single diode
Case: D2PAK
Max. forward voltage: 1.7V
Max. forward impulse current: 72A
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WNSC5D12650Y6Q WNSC5D12650Y6Q.pdf
Hersteller: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 12A; TO220ACIns; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 12A
Semiconductor structure: single diode
Case: TO220ACIns
Max. load current: 24A
Max. forward impulse current: 72A
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTA416B-800BTJ
Hersteller: WeEn Semiconductors
Category: Unclassified
Description: BTA416B-800BTJ
auf Bestellung 4800 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1600+0.56 EUR
Mindestbestellmenge: 1600
Im Einkaufswagen  Stück im Wert von  UAH
NCR100W-12LX ncr100w-12l.pdf
Hersteller: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 1kV; Ifmax: 1.1A; 0.8A; Igt: 50uA; SOT223; SMD; reel,tape
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Type of thyristor: thyristor
Turn-on time: 2µs
Gate current: 50µA
Load current: 0.8A
Max. load current: 1.1A
Max. forward impulse current: 11A
Max. off-state voltage: 1kV
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MUR320J MUR320.pdf
MUR320J
Hersteller: WeEn Semiconductors
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 3A; 35ns; SMC; Ufmax: 875mV; Ifsm: 160A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 3A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SMC
Max. forward voltage: 0.875V
Kind of package: reel; tape
Max. forward impulse current: 160A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BYV29-500.127 BYV29-500.pdf _ween_psg2020.pdf
BYV29-500.127
Hersteller: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 500V; 9A; tube; Ifsm: 110A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 500V
Load current: 9A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 110A
Case: SOD59; TO220AC
Max. forward voltage: 0.9V
Heatsink thickness: max. 1.3mm
Reverse recovery time: 60ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BYV29-500,127 BYV29-500.pdf _ween_psg2020.pdf
BYV29-500,127
Hersteller: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 500V; 9A; tube; Ifsm: 110A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 500V
Load current: 9A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 110A
Case: SOD59; TO220AC
Max. forward voltage: 0.9V
Heatsink thickness: max. 1.3mm
Reverse recovery time: 60ns
auf Bestellung 1154 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
77+0.93 EUR
102+0.71 EUR
119+0.6 EUR
143+0.5 EUR
Mindestbestellmenge: 77
Im Einkaufswagen  Stück im Wert von  UAH
BYV79E-200.127 BYV79E-200.pdf _ween_psg2020.pdf
BYV79E-200.127
Hersteller: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 14A; tube; Ifsm: 160A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 14A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 160A
Case: SOD59; TO220AC
Max. forward voltage: 0.9V
Heatsink thickness: max. 1.3mm
Reverse recovery time: 30ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BYV79E-200,127 BYV79E-200.pdf _ween_psg2020.pdf
BYV79E-200,127
Hersteller: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 14A; tube; Ifsm: 160A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 14A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 160A
Case: SOD59; TO220AC
Max. forward voltage: 0.83V
Heatsink thickness: max. 1.3mm
Reverse recovery time: 30ns
auf Bestellung 203 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
61+1.19 EUR
81+0.89 EUR
96+0.75 EUR
119+0.6 EUR
133+0.54 EUR
Mindestbestellmenge: 61
Im Einkaufswagen  Stück im Wert von  UAH
MCR08BT1,115 MCR08BT1.pdf _ween_psg2020.pdf
MCR08BT1,115
Hersteller: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 200V; Ifmax: 0.8A; 0.5A; Igt: 50uA; SOT223; SMD; reel,tape
Kind of package: reel; tape
Case: SOT223
Mounting: SMD
Turn-on time: 2µs
Gate current: 50µA
Max. load current: 0.8A
Load current: 0.5A
Max. forward impulse current: 8A
Max. off-state voltage: 200V
Type of thyristor: thyristor
auf Bestellung 1721 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
167+0.43 EUR
196+0.37 EUR
302+0.24 EUR
500+0.17 EUR
1000+0.15 EUR
Mindestbestellmenge: 167
Im Einkaufswagen  Stück im Wert von  UAH
SMDJ40AJ SMDJ Series.pdf
Hersteller: WeEn Semiconductors
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 44.8÷48.8V; 46.5A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 40V
Breakdown voltage: 44.8...48.8V
Max. forward impulse current: 46.5A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMDJ
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTA225-600B,127 BTA225-600B.pdf
BTA225-600B,127
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 25A; TO220AB; Igt: 50mA; Ifsm: 190A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 25A
Case: TO220AB
Gate current: 50mA
Max. forward impulse current: 190A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
auf Bestellung 1056 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
48+1.52 EUR
59+1.23 EUR
65+1.12 EUR
100+1.07 EUR
250+1 EUR
500+0.96 EUR
Mindestbestellmenge: 48
Im Einkaufswagen  Stück im Wert von  UAH
BTA225B-800B,118 BTA225B-800B.pdf _ween_psg2020.pdf
BTA225B-800B,118
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 25A; D2PAK; Igt: 50mA; Ifsm: 190A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 25A
Case: D2PAK
Gate current: 50mA
Max. forward impulse current: 190A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
auf Bestellung 228 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
30+2.46 EUR
54+1.33 EUR
Mindestbestellmenge: 30
Im Einkaufswagen  Stück im Wert von  UAH
BTA225-800B,127 BTA225-800B.pdf _ween_psg2020.pdf
BTA225-800B,127
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 25A; TO220AB; Igt: 50mA; Ifsm: 190A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 25A
Case: TO220AB
Gate current: 50mA
Max. forward impulse current: 190A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
auf Bestellung 134 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
27+2.67 EUR
39+1.84 EUR
50+1.46 EUR
100+1.32 EUR
Mindestbestellmenge: 27
Im Einkaufswagen  Stück im Wert von  UAH
BTA225-600BT,127 bta225-600bt.pdf
BTA225-600BT,127
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 25A; TO220AB; Igt: 50mA; Ifsm: 190A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 25A
Case: TO220AB
Gate current: 50mA
Max. forward impulse current: 190A
Technology: 3Q; Hi-Com
Features of semiconductor devices: high temperature; sensitive gate
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTA225B-800BTJ bta225b-800bt.pdf
BTA225B-800BTJ
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 25A; D2PAK; Igt: 50mA; Ifsm: 190A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 25A
Case: D2PAK
Gate current: 50mA
Max. forward impulse current: 190A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BYC15-600,127 byc15-600.pdf
BYC15-600,127
Hersteller: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 15A; tube; Ifsm: 200A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 15A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Kind of package: tube
Max. forward impulse current: 200A
Case: SOD59; TO220AC
Max. forward voltage: 1.4V
Reverse recovery time: 19ns
auf Bestellung 328 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
90+0.8 EUR
106+0.67 EUR
119+0.6 EUR
Mindestbestellmenge: 90
Im Einkaufswagen  Stück im Wert von  UAH
BYC15-600PQ BYC15-600P.pdf
BYC15-600PQ
Hersteller: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 15A; tube; Ifsm: 180A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 15A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 180A
Case: SOD59; TO220AC
Max. forward voltage: 2V
Reverse recovery time: 18ns
Max. load current: 30A
auf Bestellung 776 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
71+1.02 EUR
123+0.58 EUR
129+0.56 EUR
Mindestbestellmenge: 71
Im Einkaufswagen  Stück im Wert von  UAH
BT1308W-600D,115 BT1308W-600D.pdf _ween_psg2020.pdf
BT1308W-600D,115
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 0.8A; SOT223; Igt: 5/7mA; Ifsm: 9A; 4Q; sensitive gate
Features of semiconductor devices: sensitive gate
Kind of package: reel; tape
Gate current: 5/7mA
Max. load current: 0.8A
Max. forward impulse current: 9A
Max. off-state voltage: 0.6kV
Technology: 4Q
Type of thyristor: triac
Case: SOT223
Mounting: SMD
auf Bestellung 512 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
143+0.5 EUR
186+0.39 EUR
218+0.33 EUR
363+0.2 EUR
500+0.14 EUR
Mindestbestellmenge: 143
Im Einkaufswagen  Stück im Wert von  UAH
BT1308W-400D,115 bt1308w-400d.pdf
BT1308W-400D,115
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 400V; 0.8A; SOT223; Igt: 5/7mA; Ifsm: 9A; 4Q; sensitive gate
Features of semiconductor devices: sensitive gate
Kind of package: reel; tape
Gate current: 5/7mA
Max. load current: 0.8A
Max. forward impulse current: 9A
Max. off-state voltage: 0.4kV
Technology: 4Q
Type of thyristor: triac
Case: SOT223
Mounting: SMD
auf Bestellung 1010 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
136+0.53 EUR
177+0.4 EUR
285+0.25 EUR
345+0.21 EUR
500+0.18 EUR
1000+0.16 EUR
Mindestbestellmenge: 136
Im Einkaufswagen  Stück im Wert von  UAH
BTA216B-600D,118 bta216b-600e.pdf
BTA216B-600D,118
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 16A; D2PAK; Igt: 5mA; Ifsm: 140A; 3Q,Hi-Com
Features of semiconductor devices: sensitive gate
Kind of package: reel; tape
Gate current: 5mA
Max. load current: 16A
Max. forward impulse current: 140A
Max. off-state voltage: 0.6kV
Technology: 3Q; Hi-Com
Type of thyristor: triac
Case: D2PAK
Mounting: SMD
auf Bestellung 616 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
61+1.19 EUR
67+1.07 EUR
75+0.96 EUR
100+0.84 EUR
Mindestbestellmenge: 61
Im Einkaufswagen  Stück im Wert von  UAH
BTA425X-800BQ bta425x-800b.pdf
BTA425X-800BQ
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 25A; TO220FP; Igt: 50mA; Ifsm: 250A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 25A
Case: TO220FP
Gate current: 50mA
Max. forward impulse current: 250A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTA425X-800BT/L02Q bta425x-800bt.pdf
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 25A; TO220FP; Igt: 50mA; Ifsm: 275A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 25A
Case: TO220FP
Gate current: 50mA
Max. forward impulse current: 275A
Technology: 3Q; Hi-Com
Features of semiconductor devices: high temperature
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTA425Y-800CTQ bta425y-800ct.pdf
BTA425Y-800CTQ
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 25A; TO220AB; Igt: 35mA; Ifsm: 250A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 25A
Case: TO220AB
Gate current: 35mA
Max. forward impulse current: 250A
Technology: 3Q; Hi-Com
Features of semiconductor devices: high temperature; sensitive gate
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMSC010H12B1P6T WMSC010H12B1P6T.pdf
Hersteller: WeEn Semiconductors
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 107A; Press-in PCB; 152W
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 107A
Topology: MOSFET half-bridge; NTC thermistor
Electrical mounting: Press-in PCB
On-state resistance: 10mΩ
Pulsed drain current: 210A
Power dissipation: 152W
Technology: SiC
Gate-source voltage: -4...18V
Mechanical mounting: screw
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SOD20AX SOD Series.pdf
Hersteller: WeEn Semiconductors
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 200W; 22.41÷24.28V; 6.2A; unidirectional; SOD123F
Type of diode: TVS
Peak pulse power dissipation: 0.2kW
Max. off-state voltage: 20V
Breakdown voltage: 22.41...24.28V
Max. forward impulse current: 6.2A
Semiconductor structure: unidirectional
Case: SOD123F
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
P4SOD33CAX P4SOD.pdf
Hersteller: WeEn Semiconductors
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 36.7÷40.6V; 7.5A; bidirectional; SOD123F; P4SOD
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 7.5A
Semiconductor structure: bidirectional
Case: SOD123F
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P4SOD
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
P4SOD36AX P4SOD.pdf
Hersteller: WeEn Semiconductors
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 40÷44.2V; 6.2A; unidirectional; SOD123F; P4SOD
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 36V
Breakdown voltage: 40...44.2V
Max. forward impulse current: 6.2A
Semiconductor structure: unidirectional
Case: SOD123F
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P4SOD
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
P4SOD58AX P4SOD.pdf
P4SOD58AX
Hersteller: WeEn Semiconductors
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 64.4÷71.2V; 4.3A; unidirectional; SOD123F; P4SOD
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...71.2V
Max. forward impulse current: 4.3A
Semiconductor structure: unidirectional
Case: SOD123F
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P4SOD
Produkt ist nicht verfügbar
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BTA312B-800B,118 bta312b-800b.pdf
BTA312B-800B,118
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 12A; D2PAK; Igt: 50mA; Ifsm: 100A; 3Q,Hi-Com
Technology: 3Q; Hi-Com
Type of thyristor: triac
Gate current: 50mA
Max. load current: 12A
Max. off-state voltage: 0.8kV
Max. forward impulse current: 100A
Case: D2PAK
Mounting: SMD
Features of semiconductor devices: sensitive gate
Kind of package: reel; tape
auf Bestellung 754 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
74+0.97 EUR
82+0.88 EUR
93+0.77 EUR
101+0.71 EUR
Mindestbestellmenge: 74
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BTA312B-800C,118 bta312b-800c.pdf
BTA312B-800C,118
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 12A; D2PAK; Igt: 35mA; Ifsm: 100A; 3Q,Hi-Com
Technology: 3Q; Hi-Com
Type of thyristor: triac
Gate current: 35mA
Max. load current: 12A
Max. off-state voltage: 0.8kV
Max. forward impulse current: 100A
Case: D2PAK
Mounting: SMD
Features of semiconductor devices: sensitive gate
Kind of package: reel; tape
auf Bestellung 795 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
45+1.62 EUR
67+1.07 EUR
100+0.8 EUR
500+0.68 EUR
Mindestbestellmenge: 45
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BTA312B-600CT,118 BTA312B-600CT.pdf _ween_psg2020.pdf
BTA312B-600CT,118
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 12A; D2PAK; Igt: 35mA; Ifsm: 100A; 3Q,Hi-Com
Technology: 3Q; Hi-Com
Type of thyristor: triac
Gate current: 35mA
Max. load current: 12A
Max. off-state voltage: 0.6kV
Max. forward impulse current: 100A
Case: D2PAK
Mounting: SMD
Features of semiconductor devices: high temperature; sensitive gate
Kind of package: reel; tape
auf Bestellung 478 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
38+1.89 EUR
60+1.21 EUR
100+0.82 EUR
250+0.74 EUR
Mindestbestellmenge: 38
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BTA312B-600C,118 bta312b-600c.pdf
BTA312B-600C,118
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 12A; D2PAK; Igt: 35mA; Ifsm: 100A; 3Q,Hi-Com
Technology: 3Q; Hi-Com
Type of thyristor: triac
Gate current: 35mA
Max. load current: 12A
Max. off-state voltage: 0.6kV
Max. forward impulse current: 100A
Case: D2PAK
Mounting: SMD
Features of semiconductor devices: sensitive gate
Kind of package: reel; tape
Produkt ist nicht verfügbar
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BTA312B-600E,118 bta312b-600e.pdf
BTA312B-600E,118
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 12A; D2PAK; Igt: 10mA; Ifsm: 100A; 3Q,Hi-Com
Technology: 3Q; Hi-Com
Type of thyristor: triac
Gate current: 10mA
Max. load current: 12A
Max. off-state voltage: 0.6kV
Max. forward impulse current: 100A
Case: D2PAK
Mounting: SMD
Features of semiconductor devices: sensitive gate
Kind of package: reel; tape
Produkt ist nicht verfügbar
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BTA312B-600D,118 _ween_psg2020.pdf
BTA312B-600D,118
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 12A; D2PAK; Igt: 5mA; Ifsm: 100A; 3Q,Hi-Com
Technology: 3Q; Hi-Com
Type of thyristor: triac
Gate current: 5mA
Max. load current: 12A
Max. off-state voltage: 0.6kV
Max. forward impulse current: 100A
Case: D2PAK
Mounting: SMD
Features of semiconductor devices: sensitive gate
Kind of package: reel; tape
Produkt ist nicht verfügbar
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WMSC030H12B1P6T WMSC030H12B1P6T.pdf
Hersteller: WeEn Semiconductors
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 53A; Press-in PCB; Idm: 100A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 53A
Topology: MOSFET half-bridge; NTC thermistor
Electrical mounting: Press-in PCB
On-state resistance: 30mΩ
Pulsed drain current: 100A
Power dissipation: 111W
Technology: SiC
Gate-source voltage: -4...18V
Mechanical mounting: screw
Produkt ist nicht verfügbar
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NXPSC206506Q nxpsc20650.pdf
NXPSC206506Q
Hersteller: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 1.7V
Max. forward impulse current: 100A
Kind of package: tube
Produkt ist nicht verfügbar
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NXPSC20650W-AQ NXPSC20650W-A.pdf _ween_psg2020.pdf
NXPSC20650W-AQ
Hersteller: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 2.1V
Max. forward impulse current: 50A
Kind of package: tube
Max. load current: 20A
Application: automotive industry
Produkt ist nicht verfügbar
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NXPSC20650W6Q nxpsc20650w.pdf
NXPSC20650W6Q
Hersteller: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 1.7V
Max. forward impulse current: 50A
Kind of package: tube
Max. load current: 20A
Produkt ist nicht verfügbar
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WNSC6D20650B6J WNSC6D20650B6J.pdf
Hersteller: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SiC; SMD; 650V; 20A; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 20A
Semiconductor structure: single diode
Case: D2PAK
Max. forward voltage: 1.8V
Max. forward impulse current: 120A
Kind of package: reel; tape
Max. load current: 40A
Produkt ist nicht verfügbar
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NXPLQSC20650W6Q nxplqsc20650w.pdf
NXPLQSC20650W6Q
Hersteller: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 1.85V
Max. forward impulse current: 48A
Kind of package: tube
Max. load current: 20A
Produkt ist nicht verfügbar
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