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ACT108-600D,126 WeEn Semiconductors act108-600d.pdf PHGLS21889-1.pdf?t.download=true&u=5oefqw Category: Thyristors - others
Description: Thyristor: AC switch; 600V; Ifmax: 0.8A; Igt: 5mA; TO92; THT
Mounting: THT
Case: TO92
Gate current: 5mA
Max. load current: 0.8A
Max. off-state voltage: 0.6kV
Kind of package: Ammo Pack
Type of thyristor: AC switch
Features of semiconductor devices: internally triggered
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ACT108-600D,412 WeEn Semiconductors PHGLS21889-1.pdf?t.download=true&u=5oefqw act108-600d.pdf Category: Thyristors - others
Description: Thyristor: AC switch; 600V; Ifmax: 0.8A; Igt: 5mA; TO92; THT; bulk
Mounting: THT
Case: TO92
Gate current: 5mA
Max. load current: 0.8A
Max. off-state voltage: 0.6kV
Kind of package: bulk
Type of thyristor: AC switch
Features of semiconductor devices: internally triggered
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SMBJ26AJ WeEn Semiconductors SMBJ Series.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 29.12÷31.67V; 14.3A; unidirectional; SMB; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 26V
Breakdown voltage: 29.12...31.67V
Max. forward impulse current: 14.3A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMBJ
Kind of package: reel; tape
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BT137X-600.127 BT137X-600.127 WeEn Semiconductors BT137X-600.pdf _ween_psg2020.pdf Category: Triacs
Description: Triac; 600V; 8A; TO220FP; Igt: 35/70mA; Ifsm: 65A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 8A
Case: TO220FP
Gate current: 35/70mA
Max. forward impulse current: 65A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
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BT151X-650LTNQ BT151X-650LTNQ WeEn Semiconductors BT151X-650LTN.pdf _ween_psg2020.pdf Category: SMD/THT thyristors
Description: Thyristor; 650V; Ifmax: 12A; 7.5A; Igt: 5mA; TO220FP; THT; tube; 2us
Type of thyristor: thyristor
Max. off-state voltage: 650V
Max. load current: 12A
Load current: 7.5A
Gate current: 5mA
Case: TO220FP
Mounting: THT
Kind of package: tube
Max. forward impulse current: 120A
Turn-on time: 2µs
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BTA425Z-800CTQ WeEn Semiconductors BTA425Z-800CT.pdf Category: Triacs
Description: Triac; 800V; 25A; SOT1292,TO3P; Igt: 35mA; Ifsm: 250A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 25A
Case: SOT1292; TO3P
Gate current: 35mA
Max. forward impulse current: 250A
Technology: 3Q; Hi-Com
Features of semiconductor devices: high temperature; sensitive gate
Mounting: THT
Kind of package: tube
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SMDJ28CAJ WeEn Semiconductors SMDJ Series.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 31.34÷34.16V; 66.1A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 28V
Breakdown voltage: 31.34...34.16V
Max. forward impulse current: 66.1A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMDJ
Kind of package: reel; tape
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5.0SMDJ28CAJ WeEn Semiconductors 5.0SMDJ.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 5kW; 31.1÷34.4V; 110A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 5kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...34.4V
Max. forward impulse current: 110A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: 5.0SMDJ
Kind of package: reel; tape
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ACTT4S-800E,118 ACTT4S-800E,118 WeEn Semiconductors ACTT4S-800E.pdf Category: Thyristors - others
Description: Thyristor: AC switch; 800V; Ifmax: 4A; Igt: 10mA; DPAK; SMD
Case: DPAK
Mounting: SMD
Gate current: 10mA
Max. load current: 4A
Max. off-state voltage: 0.8kV
Type of thyristor: AC switch
Kind of package: reel; tape
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125+0.57 EUR
177+0.4 EUR
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ACTT4S-800C,118 WeEn Semiconductors actt4s-800c.pdf Category: Thyristors - others
Description: Thyristor: AC switch; 800V; Ifmax: 4A; Igt: 35mA; DPAK; SMD
Type of thyristor: AC switch
Max. off-state voltage: 0.8kV
Max. load current: 4A
Gate current: 35mA
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
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ACTT2S-800E,118 ACTT2S-800E,118 WeEn Semiconductors ACTT2S-800E.pdf _ween_psg2020.pdf Category: Thyristors - others
Description: Thyristor: AC switch; 800V; Ifmax: 2A; Igt: 10mA; DPAK; SMD
Case: DPAK
Mounting: SMD
Gate current: 10mA
Max. load current: 2A
Max. off-state voltage: 0.8kV
Type of thyristor: AC switch
Kind of package: reel; tape
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154+0.46 EUR
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ACTT2S-800ETNJ WeEn Semiconductors actt2s-800etn.pdf Category: Thyristors - others
Description: Thyristor: AC switch; 800V; Ifmax: 2A; Igt: 10mA; DPAK; SMD
Type of thyristor: AC switch
Max. off-state voltage: 0.8kV
Max. load current: 2A
Gate current: 10mA
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
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BT136-800E.127 BT136-800E.127 WeEn Semiconductors BT136-800E.pdf _ween_psg2020.pdf Category: Triacs
Description: Triac; 800V; 4A; TO220AB; Igt: 10/25mA; Ifsm: 25A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 4A
Case: TO220AB
Gate current: 10/25mA
Mounting: THT
Kind of package: tube
Technology: 4Q
Max. forward impulse current: 25A
Features of semiconductor devices: sensitive gate
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MAC223A6,127 MAC223A6,127 WeEn Semiconductors mac223a6.pdf MAC223A6.pdf Category: Triacs
Description: Triac; 400V; 25A; TO220AB; Igt: 50/75mA; Ifsm: 190A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.4kV
Max. load current: 25A
Case: TO220AB
Gate current: 50/75mA
Mounting: THT
Kind of package: tube
Features of semiconductor devices: sensitive gate
Max. forward impulse current: 190A
Technology: 4Q
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52+1.4 EUR
55+1.3 EUR
59+1.23 EUR
100+1.16 EUR
250+1.07 EUR
500+0.99 EUR
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BT137X-800.127 BT137X-800.127 WeEn Semiconductors BT137X-800.pdf _ween_psg2020.pdf Category: Triacs
Description: Triac; 800V; 8A; TO220FP; Igt: 35/70mA; Ifsm: 65A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 8A
Case: TO220FP
Gate current: 35/70mA
Max. forward impulse current: 65A
Technology: 4Q
Mounting: THT
Kind of package: tube
Features of semiconductor devices: sensitive gate
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BTA425Y-800BTQ BTA425Y-800BTQ WeEn Semiconductors _ween_psg2020.pdf Category: Triacs
Description: Triac; 800V; 25A; TO220AB; Igt: 50mA; Ifsm: 250A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 25A
Case: TO220AB
Gate current: 50mA
Max. forward impulse current: 250A
Technology: 3Q; Hi-Com
Features of semiconductor devices: high temperature; sensitive gate
Mounting: THT
Kind of package: tube
auf Bestellung 978 Stücke:
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36+2 EUR
60+1.2 EUR
65+1.1 EUR
68+1.06 EUR
100+1 EUR
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BTA201-600E,112 BTA201-600E,112 WeEn Semiconductors bta201-600b.pdf Category: Triacs
Description: Triac; 600V; 1A; TO92; Igt: 10mA; Ifsm: 12.5A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 1A
Case: TO92
Gate current: 10mA
Max. forward impulse current: 12.5A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
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BTA201-600B,112 BTA201-600B,112 WeEn Semiconductors bta201-600b.pdf BTA201-600B%2C112.pdf Category: Triacs
Description: Triac; 600V; 1A; TO92; Igt: 50mA; Ifsm: 12.5A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 1A
Case: TO92
Gate current: 50mA
Max. forward impulse current: 12.5A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
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BTA201-600E,126 WeEn Semiconductors bta201-600b.pdf Category: Triacs
Description: Triac; 600V; 1A; TO92; Igt: 10mA; Ifsm: 12.5A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 1A
Case: TO92
Gate current: 10mA
Max. forward impulse current: 12.5A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
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BTA201-600E/L01EP WeEn Semiconductors bta201-600e.pdf Category: Triacs
Description: Triac; 600V; 1A; TO92; Igt: 10mA; Ifsm: 12.5A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 1A
Case: TO92
Gate current: 10mA
Max. forward impulse current: 12.5A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
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BTA201-800B,112 BTA201-800B,112 WeEn Semiconductors bta201-800e.pdf Category: Triacs
Description: Triac; 800V; 1A; TO92; Igt: 50mA; Ifsm: 12.5A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 1A
Case: TO92
Gate current: 50mA
Max. forward impulse current: 12.5A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
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BTA201-800E,112 BTA201-800E,112 WeEn Semiconductors bta201-800e.pdf Category: Triacs
Description: Triac; 800V; 1A; TO92; Igt: 10mA; Ifsm: 12.5A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 1A
Case: TO92
Gate current: 10mA
Max. forward impulse current: 12.5A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
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BTA201-800E,116 BTA201-800E,116 WeEn Semiconductors bta201-800e.pdf Category: Triacs
Description: Triac; 800V; 1A; TO92; Igt: 10mA; Ifsm: 12.5A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 1A
Case: TO92
Gate current: 10mA
Max. forward impulse current: 12.5A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: reel; tape
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BTA201-800E,412 BTA201-800E,412 WeEn Semiconductors bta201-800e.pdf Category: Triacs
Description: Triac; 800V; 1A; TO92; Igt: 10mA; Ifsm: 12.5A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 1A
Case: TO92
Gate current: 10mA
Max. forward impulse current: 12.5A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: bulk
Produkt ist nicht verfügbar
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BTA201-800ER,112 BTA201-800ER,112 WeEn Semiconductors BTA201-800ER_112.pdf bta201-800er.pdf Category: Triacs
Description: Triac; 800V; 1A; TO92; Igt: 10mA; Ifsm: 12.5A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 1A
Case: TO92
Gate current: 10mA
Max. forward impulse current: 12.5A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
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BTA201-800ER,116 BTA201-800ER,116 WeEn Semiconductors bta201-800er.pdf Category: Triacs
Description: Triac; 800V; 1A; TO92; Igt: 10mA; Ifsm: 12.5A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 1A
Case: TO92
Gate current: 10mA
Max. forward impulse current: 12.5A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: reel; tape
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BTA201-800ER,126 BTA201-800ER,126 WeEn Semiconductors bta201-800er.pdf Category: Triacs
Description: Triac; 800V; 1A; TO92; Igt: 10mA; Ifsm: 12.5A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 1A
Case: TO92
Gate current: 10mA
Max. forward impulse current: 12.5A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: Ammo Pack
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BTA201-800ER,412 BTA201-800ER,412 WeEn Semiconductors bta201-800er.pdf Category: Triacs
Description: Triac; 800V; 1A; TO92; Igt: 10mA; Ifsm: 12.5A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 1A
Case: TO92
Gate current: 10mA
Max. forward impulse current: 12.5A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: bulk
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ACTT6X-800E,127 ACTT6X-800E,127 WeEn Semiconductors ACTT6X-800E.pdf _ween_psg2020.pdf Category: Thyristors - others
Description: Thyristor: AC switch; 800V; Ifmax: 6A; Igt: 10mA; TO220FP; THT; tube
Case: TO220FP
Mounting: THT
Gate current: 10mA
Max. load current: 6A
Max. off-state voltage: 0.8kV
Type of thyristor: AC switch
Kind of package: tube
auf Bestellung 552 Stücke:
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111+0.64 EUR
134+0.53 EUR
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ACTT6B-800E,118
+1
ACTT6B-800E,118 WeEn Semiconductors ACTT6B-800E.pdf Category: Thyristors - others
Description: Thyristor: AC switch; 800V; Ifmax: 6A; Igt: 10mA; D2PAK; SMD
Case: D2PAK
Mounting: SMD
Gate current: 10mA
Max. load current: 6A
Max. off-state voltage: 0.8kV
Type of thyristor: AC switch
Kind of package: reel; tape
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67+1.07 EUR
82+0.88 EUR
113+0.64 EUR
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WNSC16650CWQ WNSC16650CWQ WeEn Semiconductors WNSC16650CW_0.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8Ax2; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 1.7V
Max. load current: 16A
Max. forward impulse current: 48A
Kind of package: tube
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NXPSC166506Q NXPSC166506Q WeEn Semiconductors NXPSC166506Q.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 16A; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 16A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 1.7V
Max. forward impulse current: 96A
Kind of package: tube
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NXPSC16650B6J NXPSC16650B6J WeEn Semiconductors NXPSC16650B6J.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SiC; SMD; 650V; 16A; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 16A
Semiconductor structure: single diode
Case: D2PAK
Max. forward voltage: 1.7V
Max. forward impulse current: 96A
Kind of package: reel; tape
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BT149D,126 BT149D,126 WeEn Semiconductors BT149D.pdf _ween_psg2020.pdf Category: SMD/THT thyristors
Description: Thyristor; 400V; Ifmax: 0.8A; 0.5A; Igt: 200uA; TO92; THT; Ammo Pack
Type of thyristor: thyristor
Max. off-state voltage: 0.4kV
Max. load current: 0.8A
Load current: 0.5A
Gate current: 0.2mA
Case: TO92
Mounting: THT
Kind of package: Ammo Pack
Max. forward impulse current: 8A
Turn-on time: 2µs
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148+0.49 EUR
222+0.32 EUR
379+0.19 EUR
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BYC8-1200PQ BYC8-1200PQ WeEn Semiconductors byc8-1200p.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 8A; tube; Ifsm: 100A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 8A
Reverse recovery time: 46ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SOD59; TO220AC
Kind of package: tube
Max. forward voltage: 2V
Max. forward impulse current: 100A
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WNSC12650T6J WeEn Semiconductors WNSC12650T_0.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN8x8N; SiC; SMD; 650V; 12A; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 12A
Semiconductor structure: single diode
Case: DFN8x8N
Max. forward impulse current: 57A
Kind of package: reel; tape
Max. forward voltage: 1.8V
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WNSC12650WQ WNSC12650WQ WeEn Semiconductors WNSC12650W_2.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 12A; TO247-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 12A
Semiconductor structure: single diode
Case: TO247-2
Max. forward impulse current: 72A
Kind of package: tube
Max. forward voltage: 1.7V
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NXPSC126506Q NXPSC126506Q WeEn Semiconductors en Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 12A; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 12A
Semiconductor structure: single diode
Case: TO220AC
Max. forward impulse current: 72A
Kind of package: tube
Max. forward voltage: 1.7V
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NXPSC12650B6J NXPSC12650B6J WeEn Semiconductors NXPSC12650B6J.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SiC; SMD; 650V; 12A; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 12A
Semiconductor structure: single diode
Case: D2PAK
Max. forward impulse current: 72A
Kind of package: reel; tape
Max. forward voltage: 1.7V
Produkt ist nicht verfügbar
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WNSC5D12650Y6Q WeEn Semiconductors WNSC5D12650Y6Q.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 12A; TO220ACIns; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 12A
Semiconductor structure: single diode
Case: TO220ACIns
Max. load current: 24A
Max. forward impulse current: 72A
Kind of package: tube
Produkt ist nicht verfügbar
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BTA416B-800BTJ WeEn Semiconductors Category: Unclassified
Description: BTA416B-800BTJ
auf Bestellung 4800 Stücke:
Lieferzeit 14-21 Tag (e)
1600+0.57 EUR
Mindestbestellmenge: 1600
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NCR100W-12LX WeEn Semiconductors ncr100w-12l.pdf Category: SMD/THT thyristors
Description: Thyristor; 1kV; Ifmax: 1.1A; 0.8A; Igt: 50uA; SOT223; SMD; reel,tape
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Type of thyristor: thyristor
Turn-on time: 2µs
Gate current: 50µA
Load current: 0.8A
Max. load current: 1.1A
Max. forward impulse current: 11A
Max. off-state voltage: 1kV
Produkt ist nicht verfügbar
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MUR320J MUR320J WeEn Semiconductors MUR320.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 3A; 35ns; SMC; Ufmax: 875mV; Ifsm: 160A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 3A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SMC
Max. forward voltage: 0.875V
Kind of package: reel; tape
Max. forward impulse current: 160A
Produkt ist nicht verfügbar
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BYV29-500.127 BYV29-500.127 WeEn Semiconductors BYV29-500.pdf _ween_psg2020.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 500V; 9A; tube; Ifsm: 110A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 500V
Load current: 9A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 110A
Case: SOD59; TO220AC
Max. forward voltage: 0.9V
Heatsink thickness: max. 1.3mm
Reverse recovery time: 60ns
Produkt ist nicht verfügbar
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BYV29-500,127 BYV29-500,127 WeEn Semiconductors BYV29-500.pdf _ween_psg2020.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 500V; 9A; tube; Ifsm: 110A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 500V
Load current: 9A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 110A
Case: SOD59; TO220AC
Max. forward voltage: 0.9V
Heatsink thickness: max. 1.3mm
Reverse recovery time: 60ns
auf Bestellung 1154 Stücke:
Lieferzeit 14-21 Tag (e)
77+0.93 EUR
102+0.71 EUR
119+0.6 EUR
143+0.5 EUR
Mindestbestellmenge: 77
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BYV79E-200.127 BYV79E-200.127 WeEn Semiconductors BYV79E-200.pdf _ween_psg2020.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 14A; tube; Ifsm: 160A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 14A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 160A
Case: SOD59; TO220AC
Max. forward voltage: 0.9V
Heatsink thickness: max. 1.3mm
Reverse recovery time: 30ns
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BYV79E-200,127 BYV79E-200,127 WeEn Semiconductors BYV79E-200.pdf _ween_psg2020.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 14A; tube; Ifsm: 160A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 14A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 160A
Case: SOD59; TO220AC
Max. forward voltage: 0.83V
Heatsink thickness: max. 1.3mm
Reverse recovery time: 30ns
auf Bestellung 203 Stücke:
Lieferzeit 14-21 Tag (e)
61+1.19 EUR
81+0.89 EUR
96+0.75 EUR
119+0.6 EUR
133+0.54 EUR
Mindestbestellmenge: 61
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MCR08BT1,115 MCR08BT1,115 WeEn Semiconductors MCR08BT1.pdf _ween_psg2020.pdf Category: SMD/THT thyristors
Description: Thyristor; 200V; Ifmax: 0.8A; 0.5A; Igt: 50uA; SOT223; SMD; reel,tape
Kind of package: reel; tape
Case: SOT223
Mounting: SMD
Turn-on time: 2µs
Gate current: 50µA
Max. load current: 0.8A
Load current: 0.5A
Max. forward impulse current: 8A
Max. off-state voltage: 200V
Type of thyristor: thyristor
auf Bestellung 1721 Stücke:
Lieferzeit 14-21 Tag (e)
167+0.43 EUR
196+0.37 EUR
302+0.24 EUR
500+0.17 EUR
1000+0.15 EUR
Mindestbestellmenge: 167
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SMDJ40AJ WeEn Semiconductors SMDJ Series.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 44.8÷48.8V; 46.5A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 40V
Breakdown voltage: 44.8...48.8V
Max. forward impulse current: 46.5A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMDJ
Kind of package: reel; tape
Produkt ist nicht verfügbar
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BTA225-600B,127 BTA225-600B,127 WeEn Semiconductors BTA225-600B.pdf Category: Triacs
Description: Triac; 600V; 25A; TO220AB; Igt: 50mA; Ifsm: 190A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 25A
Case: TO220AB
Gate current: 50mA
Max. forward impulse current: 190A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
auf Bestellung 1056 Stücke:
Lieferzeit 14-21 Tag (e)
48+1.52 EUR
59+1.23 EUR
65+1.12 EUR
100+1.07 EUR
250+1 EUR
500+0.96 EUR
Mindestbestellmenge: 48
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BTA225B-800B,118 BTA225B-800B,118 WeEn Semiconductors BTA225B-800B.pdf _ween_psg2020.pdf Category: Triacs
Description: Triac; 800V; 25A; D2PAK; Igt: 50mA; Ifsm: 190A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 25A
Case: D2PAK
Gate current: 50mA
Max. forward impulse current: 190A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
auf Bestellung 228 Stücke:
Lieferzeit 14-21 Tag (e)
30+2.46 EUR
54+1.33 EUR
Mindestbestellmenge: 30
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BTA225-800B,127 BTA225-800B,127 WeEn Semiconductors BTA225-800B.pdf _ween_psg2020.pdf Category: Triacs
Description: Triac; 800V; 25A; TO220AB; Igt: 50mA; Ifsm: 190A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 25A
Case: TO220AB
Gate current: 50mA
Max. forward impulse current: 190A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
auf Bestellung 134 Stücke:
Lieferzeit 14-21 Tag (e)
27+2.67 EUR
39+1.84 EUR
50+1.46 EUR
100+1.32 EUR
Mindestbestellmenge: 27
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BTA225-600BT,127 BTA225-600BT,127 WeEn Semiconductors bta225-600bt.pdf Category: Triacs
Description: Triac; 600V; 25A; TO220AB; Igt: 50mA; Ifsm: 190A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 25A
Case: TO220AB
Gate current: 50mA
Max. forward impulse current: 190A
Technology: 3Q; Hi-Com
Features of semiconductor devices: high temperature; sensitive gate
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
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BTA225B-800BTJ BTA225B-800BTJ WeEn Semiconductors bta225b-800bt.pdf Category: Triacs
Description: Triac; 800V; 25A; D2PAK; Igt: 50mA; Ifsm: 190A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 25A
Case: D2PAK
Gate current: 50mA
Max. forward impulse current: 190A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BYC15-600,127 BYC15-600,127 WeEn Semiconductors byc15-600.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 15A; tube; Ifsm: 200A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 15A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Kind of package: tube
Max. forward impulse current: 200A
Case: SOD59; TO220AC
Max. forward voltage: 1.4V
Reverse recovery time: 19ns
auf Bestellung 333 Stücke:
Lieferzeit 14-21 Tag (e)
85+0.84 EUR
100+0.72 EUR
114+0.63 EUR
119+0.6 EUR
Mindestbestellmenge: 85
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BYC15-600PQ BYC15-600PQ WeEn Semiconductors BYC15-600P.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 15A; tube; Ifsm: 180A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 15A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 180A
Case: SOD59; TO220AC
Max. forward voltage: 2V
Max. load current: 30A
Reverse recovery time: 18ns
auf Bestellung 776 Stücke:
Lieferzeit 14-21 Tag (e)
71+1.02 EUR
116+0.62 EUR
128+0.56 EUR
Mindestbestellmenge: 71
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BT1308W-600D,115 BT1308W-600D,115 WeEn Semiconductors BT1308W-600D.pdf _ween_psg2020.pdf Category: Triacs
Description: Triac; 600V; 0.8A; SOT223; Igt: 5/7mA; Ifsm: 9A; 4Q; sensitive gate
Features of semiconductor devices: sensitive gate
Kind of package: reel; tape
Gate current: 5/7mA
Max. load current: 0.8A
Max. forward impulse current: 9A
Max. off-state voltage: 0.6kV
Technology: 4Q
Type of thyristor: triac
Case: SOT223
Mounting: SMD
auf Bestellung 512 Stücke:
Lieferzeit 14-21 Tag (e)
143+0.5 EUR
186+0.39 EUR
218+0.33 EUR
363+0.2 EUR
500+0.14 EUR
Mindestbestellmenge: 143
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BT1308W-400D,115 BT1308W-400D,115 WeEn Semiconductors bt1308w-400d.pdf Category: Triacs
Description: Triac; 400V; 0.8A; SOT223; Igt: 5/7mA; Ifsm: 9A; 4Q; sensitive gate
Features of semiconductor devices: sensitive gate
Kind of package: reel; tape
Gate current: 5/7mA
Max. load current: 0.8A
Max. forward impulse current: 9A
Max. off-state voltage: 0.4kV
Technology: 4Q
Type of thyristor: triac
Case: SOT223
Mounting: SMD
auf Bestellung 1010 Stücke:
Lieferzeit 14-21 Tag (e)
136+0.53 EUR
177+0.4 EUR
285+0.25 EUR
345+0.21 EUR
500+0.18 EUR
1000+0.16 EUR
Mindestbestellmenge: 136
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BTA216B-600D,118 BTA216B-600D,118 WeEn Semiconductors bta216b-600e.pdf Category: Triacs
Description: Triac; 600V; 16A; D2PAK; Igt: 5mA; Ifsm: 140A; 3Q,Hi-Com
Features of semiconductor devices: sensitive gate
Kind of package: reel; tape
Gate current: 5mA
Max. load current: 16A
Max. forward impulse current: 140A
Max. off-state voltage: 0.6kV
Technology: 3Q; Hi-Com
Type of thyristor: triac
Case: D2PAK
Mounting: SMD
auf Bestellung 616 Stücke:
Lieferzeit 14-21 Tag (e)
61+1.19 EUR
67+1.07 EUR
75+0.96 EUR
100+0.84 EUR
Mindestbestellmenge: 61
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BTA425X-800BQ BTA425X-800BQ WeEn Semiconductors bta425x-800b.pdf Category: Triacs
Description: Triac; 800V; 25A; TO220FP; Igt: 50mA; Ifsm: 250A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 25A
Case: TO220FP
Gate current: 50mA
Max. forward impulse current: 250A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
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ACT108-600D,126 act108-600d.pdf PHGLS21889-1.pdf?t.download=true&u=5oefqw
Hersteller: WeEn Semiconductors
Category: Thyristors - others
Description: Thyristor: AC switch; 600V; Ifmax: 0.8A; Igt: 5mA; TO92; THT
Mounting: THT
Case: TO92
Gate current: 5mA
Max. load current: 0.8A
Max. off-state voltage: 0.6kV
Kind of package: Ammo Pack
Type of thyristor: AC switch
Features of semiconductor devices: internally triggered
Produkt ist nicht verfügbar
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ACT108-600D,412 PHGLS21889-1.pdf?t.download=true&u=5oefqw act108-600d.pdf
Hersteller: WeEn Semiconductors
Category: Thyristors - others
Description: Thyristor: AC switch; 600V; Ifmax: 0.8A; Igt: 5mA; TO92; THT; bulk
Mounting: THT
Case: TO92
Gate current: 5mA
Max. load current: 0.8A
Max. off-state voltage: 0.6kV
Kind of package: bulk
Type of thyristor: AC switch
Features of semiconductor devices: internally triggered
Produkt ist nicht verfügbar
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SMBJ26AJ SMBJ Series.pdf
Hersteller: WeEn Semiconductors
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 29.12÷31.67V; 14.3A; unidirectional; SMB; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 26V
Breakdown voltage: 29.12...31.67V
Max. forward impulse current: 14.3A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMBJ
Kind of package: reel; tape
Produkt ist nicht verfügbar
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BT137X-600.127 BT137X-600.pdf _ween_psg2020.pdf
BT137X-600.127
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 8A; TO220FP; Igt: 35/70mA; Ifsm: 65A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 8A
Case: TO220FP
Gate current: 35/70mA
Max. forward impulse current: 65A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
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BT151X-650LTNQ BT151X-650LTN.pdf _ween_psg2020.pdf
BT151X-650LTNQ
Hersteller: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 650V; Ifmax: 12A; 7.5A; Igt: 5mA; TO220FP; THT; tube; 2us
Type of thyristor: thyristor
Max. off-state voltage: 650V
Max. load current: 12A
Load current: 7.5A
Gate current: 5mA
Case: TO220FP
Mounting: THT
Kind of package: tube
Max. forward impulse current: 120A
Turn-on time: 2µs
Produkt ist nicht verfügbar
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BTA425Z-800CTQ BTA425Z-800CT.pdf
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 25A; SOT1292,TO3P; Igt: 35mA; Ifsm: 250A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 25A
Case: SOT1292; TO3P
Gate current: 35mA
Max. forward impulse current: 250A
Technology: 3Q; Hi-Com
Features of semiconductor devices: high temperature; sensitive gate
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
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SMDJ28CAJ SMDJ Series.pdf
Hersteller: WeEn Semiconductors
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 31.34÷34.16V; 66.1A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 28V
Breakdown voltage: 31.34...34.16V
Max. forward impulse current: 66.1A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMDJ
Kind of package: reel; tape
Produkt ist nicht verfügbar
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5.0SMDJ28CAJ 5.0SMDJ.pdf
Hersteller: WeEn Semiconductors
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 5kW; 31.1÷34.4V; 110A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 5kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...34.4V
Max. forward impulse current: 110A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: 5.0SMDJ
Kind of package: reel; tape
Produkt ist nicht verfügbar
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ACTT4S-800E,118 ACTT4S-800E.pdf
ACTT4S-800E,118
Hersteller: WeEn Semiconductors
Category: Thyristors - others
Description: Thyristor: AC switch; 800V; Ifmax: 4A; Igt: 10mA; DPAK; SMD
Case: DPAK
Mounting: SMD
Gate current: 10mA
Max. load current: 4A
Max. off-state voltage: 0.8kV
Type of thyristor: AC switch
Kind of package: reel; tape
auf Bestellung 2162 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
107+0.67 EUR
125+0.57 EUR
177+0.4 EUR
250+0.36 EUR
500+0.34 EUR
Mindestbestellmenge: 107
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ACTT4S-800C,118 actt4s-800c.pdf
Hersteller: WeEn Semiconductors
Category: Thyristors - others
Description: Thyristor: AC switch; 800V; Ifmax: 4A; Igt: 35mA; DPAK; SMD
Type of thyristor: AC switch
Max. off-state voltage: 0.8kV
Max. load current: 4A
Gate current: 35mA
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Produkt ist nicht verfügbar
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ACTT2S-800E,118 ACTT2S-800E.pdf _ween_psg2020.pdf
ACTT2S-800E,118
Hersteller: WeEn Semiconductors
Category: Thyristors - others
Description: Thyristor: AC switch; 800V; Ifmax: 2A; Igt: 10mA; DPAK; SMD
Case: DPAK
Mounting: SMD
Gate current: 10mA
Max. load current: 2A
Max. off-state voltage: 0.8kV
Type of thyristor: AC switch
Kind of package: reel; tape
auf Bestellung 269 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
97+0.74 EUR
137+0.52 EUR
154+0.46 EUR
182+0.39 EUR
250+0.36 EUR
Mindestbestellmenge: 97
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ACTT2S-800ETNJ actt2s-800etn.pdf
Hersteller: WeEn Semiconductors
Category: Thyristors - others
Description: Thyristor: AC switch; 800V; Ifmax: 2A; Igt: 10mA; DPAK; SMD
Type of thyristor: AC switch
Max. off-state voltage: 0.8kV
Max. load current: 2A
Gate current: 10mA
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Produkt ist nicht verfügbar
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BT136-800E.127 BT136-800E.pdf _ween_psg2020.pdf
BT136-800E.127
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 4A; TO220AB; Igt: 10/25mA; Ifsm: 25A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 4A
Case: TO220AB
Gate current: 10/25mA
Mounting: THT
Kind of package: tube
Technology: 4Q
Max. forward impulse current: 25A
Features of semiconductor devices: sensitive gate
Produkt ist nicht verfügbar
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MAC223A6,127 mac223a6.pdf MAC223A6.pdf
MAC223A6,127
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 400V; 25A; TO220AB; Igt: 50/75mA; Ifsm: 190A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.4kV
Max. load current: 25A
Case: TO220AB
Gate current: 50/75mA
Mounting: THT
Kind of package: tube
Features of semiconductor devices: sensitive gate
Max. forward impulse current: 190A
Technology: 4Q
auf Bestellung 774 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
32+2.25 EUR
52+1.4 EUR
55+1.3 EUR
59+1.23 EUR
100+1.16 EUR
250+1.07 EUR
500+0.99 EUR
Mindestbestellmenge: 32
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BT137X-800.127 BT137X-800.pdf _ween_psg2020.pdf
BT137X-800.127
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 8A; TO220FP; Igt: 35/70mA; Ifsm: 65A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 8A
Case: TO220FP
Gate current: 35/70mA
Max. forward impulse current: 65A
Technology: 4Q
Mounting: THT
Kind of package: tube
Features of semiconductor devices: sensitive gate
Produkt ist nicht verfügbar
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BTA425Y-800BTQ _ween_psg2020.pdf
BTA425Y-800BTQ
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 25A; TO220AB; Igt: 50mA; Ifsm: 250A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 25A
Case: TO220AB
Gate current: 50mA
Max. forward impulse current: 250A
Technology: 3Q; Hi-Com
Features of semiconductor devices: high temperature; sensitive gate
Mounting: THT
Kind of package: tube
auf Bestellung 978 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
36+2 EUR
60+1.2 EUR
65+1.1 EUR
68+1.06 EUR
100+1 EUR
Mindestbestellmenge: 36
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BTA201-600E,112 bta201-600b.pdf
BTA201-600E,112
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 1A; TO92; Igt: 10mA; Ifsm: 12.5A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 1A
Case: TO92
Gate current: 10mA
Max. forward impulse current: 12.5A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Produkt ist nicht verfügbar
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BTA201-600B,112 bta201-600b.pdf BTA201-600B%2C112.pdf
BTA201-600B,112
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 1A; TO92; Igt: 50mA; Ifsm: 12.5A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 1A
Case: TO92
Gate current: 50mA
Max. forward impulse current: 12.5A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Produkt ist nicht verfügbar
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BTA201-600E,126 bta201-600b.pdf
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 1A; TO92; Igt: 10mA; Ifsm: 12.5A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 1A
Case: TO92
Gate current: 10mA
Max. forward impulse current: 12.5A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTA201-600E/L01EP bta201-600e.pdf
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 1A; TO92; Igt: 10mA; Ifsm: 12.5A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 1A
Case: TO92
Gate current: 10mA
Max. forward impulse current: 12.5A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTA201-800B,112 bta201-800e.pdf
BTA201-800B,112
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 1A; TO92; Igt: 50mA; Ifsm: 12.5A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 1A
Case: TO92
Gate current: 50mA
Max. forward impulse current: 12.5A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTA201-800E,112 bta201-800e.pdf
BTA201-800E,112
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 1A; TO92; Igt: 10mA; Ifsm: 12.5A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 1A
Case: TO92
Gate current: 10mA
Max. forward impulse current: 12.5A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Produkt ist nicht verfügbar
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BTA201-800E,116 bta201-800e.pdf
BTA201-800E,116
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 1A; TO92; Igt: 10mA; Ifsm: 12.5A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 1A
Case: TO92
Gate current: 10mA
Max. forward impulse current: 12.5A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: reel; tape
Produkt ist nicht verfügbar
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BTA201-800E,412 bta201-800e.pdf
BTA201-800E,412
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 1A; TO92; Igt: 10mA; Ifsm: 12.5A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 1A
Case: TO92
Gate current: 10mA
Max. forward impulse current: 12.5A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: bulk
Produkt ist nicht verfügbar
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BTA201-800ER,112 BTA201-800ER_112.pdf bta201-800er.pdf
BTA201-800ER,112
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 1A; TO92; Igt: 10mA; Ifsm: 12.5A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 1A
Case: TO92
Gate current: 10mA
Max. forward impulse current: 12.5A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Produkt ist nicht verfügbar
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BTA201-800ER,116 bta201-800er.pdf
BTA201-800ER,116
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 1A; TO92; Igt: 10mA; Ifsm: 12.5A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 1A
Case: TO92
Gate current: 10mA
Max. forward impulse current: 12.5A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: reel; tape
Produkt ist nicht verfügbar
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BTA201-800ER,126 bta201-800er.pdf
BTA201-800ER,126
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 1A; TO92; Igt: 10mA; Ifsm: 12.5A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 1A
Case: TO92
Gate current: 10mA
Max. forward impulse current: 12.5A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: Ammo Pack
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTA201-800ER,412 bta201-800er.pdf
BTA201-800ER,412
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 1A; TO92; Igt: 10mA; Ifsm: 12.5A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 1A
Case: TO92
Gate current: 10mA
Max. forward impulse current: 12.5A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: bulk
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
ACTT6X-800E,127 ACTT6X-800E.pdf _ween_psg2020.pdf
ACTT6X-800E,127
Hersteller: WeEn Semiconductors
Category: Thyristors - others
Description: Thyristor: AC switch; 800V; Ifmax: 6A; Igt: 10mA; TO220FP; THT; tube
Case: TO220FP
Mounting: THT
Gate current: 10mA
Max. load current: 6A
Max. off-state voltage: 0.8kV
Type of thyristor: AC switch
Kind of package: tube
auf Bestellung 552 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
75+0.96 EUR
111+0.64 EUR
134+0.53 EUR
500+0.46 EUR
Mindestbestellmenge: 75
Im Einkaufswagen  Stück im Wert von  UAH
ACTT6B-800E,118 ACTT6B-800E.pdf
Hersteller: WeEn Semiconductors
Category: Thyristors - others
Description: Thyristor: AC switch; 800V; Ifmax: 6A; Igt: 10mA; D2PAK; SMD
Case: D2PAK
Mounting: SMD
Gate current: 10mA
Max. load current: 6A
Max. off-state voltage: 0.8kV
Type of thyristor: AC switch
Kind of package: reel; tape
auf Bestellung 321 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
67+1.07 EUR
82+0.88 EUR
113+0.64 EUR
Mindestbestellmenge: 67
Im Einkaufswagen  Stück im Wert von  UAH
WNSC16650CWQ WNSC16650CW_0.pdf
WNSC16650CWQ
Hersteller: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8Ax2; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 1.7V
Max. load current: 16A
Max. forward impulse current: 48A
Kind of package: tube
Produkt ist nicht verfügbar
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NXPSC166506Q NXPSC166506Q.pdf
NXPSC166506Q
Hersteller: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 16A; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 16A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 1.7V
Max. forward impulse current: 96A
Kind of package: tube
Produkt ist nicht verfügbar
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NXPSC16650B6J NXPSC16650B6J.pdf
NXPSC16650B6J
Hersteller: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SiC; SMD; 650V; 16A; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 16A
Semiconductor structure: single diode
Case: D2PAK
Max. forward voltage: 1.7V
Max. forward impulse current: 96A
Kind of package: reel; tape
Produkt ist nicht verfügbar
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BT149D,126 BT149D.pdf _ween_psg2020.pdf
BT149D,126
Hersteller: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 400V; Ifmax: 0.8A; 0.5A; Igt: 200uA; TO92; THT; Ammo Pack
Type of thyristor: thyristor
Max. off-state voltage: 0.4kV
Max. load current: 0.8A
Load current: 0.5A
Gate current: 0.2mA
Case: TO92
Mounting: THT
Kind of package: Ammo Pack
Max. forward impulse current: 8A
Turn-on time: 2µs
auf Bestellung 490 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
148+0.49 EUR
222+0.32 EUR
379+0.19 EUR
Mindestbestellmenge: 148
Im Einkaufswagen  Stück im Wert von  UAH
BYC8-1200PQ byc8-1200p.pdf
BYC8-1200PQ
Hersteller: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 8A; tube; Ifsm: 100A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 8A
Reverse recovery time: 46ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SOD59; TO220AC
Kind of package: tube
Max. forward voltage: 2V
Max. forward impulse current: 100A
Produkt ist nicht verfügbar
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WNSC12650T6J WNSC12650T_0.pdf
Hersteller: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN8x8N; SiC; SMD; 650V; 12A; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 12A
Semiconductor structure: single diode
Case: DFN8x8N
Max. forward impulse current: 57A
Kind of package: reel; tape
Max. forward voltage: 1.8V
Produkt ist nicht verfügbar
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WNSC12650WQ WNSC12650W_2.pdf
WNSC12650WQ
Hersteller: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 12A; TO247-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 12A
Semiconductor structure: single diode
Case: TO247-2
Max. forward impulse current: 72A
Kind of package: tube
Max. forward voltage: 1.7V
Produkt ist nicht verfügbar
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NXPSC126506Q en
NXPSC126506Q
Hersteller: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 12A; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 12A
Semiconductor structure: single diode
Case: TO220AC
Max. forward impulse current: 72A
Kind of package: tube
Max. forward voltage: 1.7V
Produkt ist nicht verfügbar
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NXPSC12650B6J NXPSC12650B6J.pdf
NXPSC12650B6J
Hersteller: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SiC; SMD; 650V; 12A; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 12A
Semiconductor structure: single diode
Case: D2PAK
Max. forward impulse current: 72A
Kind of package: reel; tape
Max. forward voltage: 1.7V
Produkt ist nicht verfügbar
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WNSC5D12650Y6Q WNSC5D12650Y6Q.pdf
Hersteller: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 12A; TO220ACIns; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 12A
Semiconductor structure: single diode
Case: TO220ACIns
Max. load current: 24A
Max. forward impulse current: 72A
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTA416B-800BTJ
Hersteller: WeEn Semiconductors
Category: Unclassified
Description: BTA416B-800BTJ
auf Bestellung 4800 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1600+0.57 EUR
Mindestbestellmenge: 1600
Im Einkaufswagen  Stück im Wert von  UAH
NCR100W-12LX ncr100w-12l.pdf
Hersteller: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 1kV; Ifmax: 1.1A; 0.8A; Igt: 50uA; SOT223; SMD; reel,tape
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Type of thyristor: thyristor
Turn-on time: 2µs
Gate current: 50µA
Load current: 0.8A
Max. load current: 1.1A
Max. forward impulse current: 11A
Max. off-state voltage: 1kV
Produkt ist nicht verfügbar
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MUR320J MUR320.pdf
MUR320J
Hersteller: WeEn Semiconductors
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 3A; 35ns; SMC; Ufmax: 875mV; Ifsm: 160A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 3A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SMC
Max. forward voltage: 0.875V
Kind of package: reel; tape
Max. forward impulse current: 160A
Produkt ist nicht verfügbar
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BYV29-500.127 BYV29-500.pdf _ween_psg2020.pdf
BYV29-500.127
Hersteller: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 500V; 9A; tube; Ifsm: 110A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 500V
Load current: 9A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 110A
Case: SOD59; TO220AC
Max. forward voltage: 0.9V
Heatsink thickness: max. 1.3mm
Reverse recovery time: 60ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BYV29-500,127 BYV29-500.pdf _ween_psg2020.pdf
BYV29-500,127
Hersteller: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 500V; 9A; tube; Ifsm: 110A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 500V
Load current: 9A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 110A
Case: SOD59; TO220AC
Max. forward voltage: 0.9V
Heatsink thickness: max. 1.3mm
Reverse recovery time: 60ns
auf Bestellung 1154 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
77+0.93 EUR
102+0.71 EUR
119+0.6 EUR
143+0.5 EUR
Mindestbestellmenge: 77
Im Einkaufswagen  Stück im Wert von  UAH
BYV79E-200.127 BYV79E-200.pdf _ween_psg2020.pdf
BYV79E-200.127
Hersteller: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 14A; tube; Ifsm: 160A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 14A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 160A
Case: SOD59; TO220AC
Max. forward voltage: 0.9V
Heatsink thickness: max. 1.3mm
Reverse recovery time: 30ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BYV79E-200,127 BYV79E-200.pdf _ween_psg2020.pdf
BYV79E-200,127
Hersteller: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 14A; tube; Ifsm: 160A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 14A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 160A
Case: SOD59; TO220AC
Max. forward voltage: 0.83V
Heatsink thickness: max. 1.3mm
Reverse recovery time: 30ns
auf Bestellung 203 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
61+1.19 EUR
81+0.89 EUR
96+0.75 EUR
119+0.6 EUR
133+0.54 EUR
Mindestbestellmenge: 61
Im Einkaufswagen  Stück im Wert von  UAH
MCR08BT1,115 MCR08BT1.pdf _ween_psg2020.pdf
MCR08BT1,115
Hersteller: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 200V; Ifmax: 0.8A; 0.5A; Igt: 50uA; SOT223; SMD; reel,tape
Kind of package: reel; tape
Case: SOT223
Mounting: SMD
Turn-on time: 2µs
Gate current: 50µA
Max. load current: 0.8A
Load current: 0.5A
Max. forward impulse current: 8A
Max. off-state voltage: 200V
Type of thyristor: thyristor
auf Bestellung 1721 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
167+0.43 EUR
196+0.37 EUR
302+0.24 EUR
500+0.17 EUR
1000+0.15 EUR
Mindestbestellmenge: 167
Im Einkaufswagen  Stück im Wert von  UAH
SMDJ40AJ SMDJ Series.pdf
Hersteller: WeEn Semiconductors
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 44.8÷48.8V; 46.5A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 40V
Breakdown voltage: 44.8...48.8V
Max. forward impulse current: 46.5A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMDJ
Kind of package: reel; tape
Produkt ist nicht verfügbar
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BTA225-600B,127 BTA225-600B.pdf
BTA225-600B,127
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 25A; TO220AB; Igt: 50mA; Ifsm: 190A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 25A
Case: TO220AB
Gate current: 50mA
Max. forward impulse current: 190A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
auf Bestellung 1056 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
48+1.52 EUR
59+1.23 EUR
65+1.12 EUR
100+1.07 EUR
250+1 EUR
500+0.96 EUR
Mindestbestellmenge: 48
Im Einkaufswagen  Stück im Wert von  UAH
BTA225B-800B,118 BTA225B-800B.pdf _ween_psg2020.pdf
BTA225B-800B,118
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 25A; D2PAK; Igt: 50mA; Ifsm: 190A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 25A
Case: D2PAK
Gate current: 50mA
Max. forward impulse current: 190A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
auf Bestellung 228 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
30+2.46 EUR
54+1.33 EUR
Mindestbestellmenge: 30
Im Einkaufswagen  Stück im Wert von  UAH
BTA225-800B,127 BTA225-800B.pdf _ween_psg2020.pdf
BTA225-800B,127
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 25A; TO220AB; Igt: 50mA; Ifsm: 190A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 25A
Case: TO220AB
Gate current: 50mA
Max. forward impulse current: 190A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
auf Bestellung 134 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
27+2.67 EUR
39+1.84 EUR
50+1.46 EUR
100+1.32 EUR
Mindestbestellmenge: 27
Im Einkaufswagen  Stück im Wert von  UAH
BTA225-600BT,127 bta225-600bt.pdf
BTA225-600BT,127
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 25A; TO220AB; Igt: 50mA; Ifsm: 190A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 25A
Case: TO220AB
Gate current: 50mA
Max. forward impulse current: 190A
Technology: 3Q; Hi-Com
Features of semiconductor devices: high temperature; sensitive gate
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTA225B-800BTJ bta225b-800bt.pdf
BTA225B-800BTJ
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 25A; D2PAK; Igt: 50mA; Ifsm: 190A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 25A
Case: D2PAK
Gate current: 50mA
Max. forward impulse current: 190A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BYC15-600,127 byc15-600.pdf
BYC15-600,127
Hersteller: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 15A; tube; Ifsm: 200A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 15A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Kind of package: tube
Max. forward impulse current: 200A
Case: SOD59; TO220AC
Max. forward voltage: 1.4V
Reverse recovery time: 19ns
auf Bestellung 333 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
85+0.84 EUR
100+0.72 EUR
114+0.63 EUR
119+0.6 EUR
Mindestbestellmenge: 85
Im Einkaufswagen  Stück im Wert von  UAH
BYC15-600PQ BYC15-600P.pdf
BYC15-600PQ
Hersteller: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 15A; tube; Ifsm: 180A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 15A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 180A
Case: SOD59; TO220AC
Max. forward voltage: 2V
Max. load current: 30A
Reverse recovery time: 18ns
auf Bestellung 776 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
71+1.02 EUR
116+0.62 EUR
128+0.56 EUR
Mindestbestellmenge: 71
Im Einkaufswagen  Stück im Wert von  UAH
BT1308W-600D,115 BT1308W-600D.pdf _ween_psg2020.pdf
BT1308W-600D,115
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 0.8A; SOT223; Igt: 5/7mA; Ifsm: 9A; 4Q; sensitive gate
Features of semiconductor devices: sensitive gate
Kind of package: reel; tape
Gate current: 5/7mA
Max. load current: 0.8A
Max. forward impulse current: 9A
Max. off-state voltage: 0.6kV
Technology: 4Q
Type of thyristor: triac
Case: SOT223
Mounting: SMD
auf Bestellung 512 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
143+0.5 EUR
186+0.39 EUR
218+0.33 EUR
363+0.2 EUR
500+0.14 EUR
Mindestbestellmenge: 143
Im Einkaufswagen  Stück im Wert von  UAH
BT1308W-400D,115 bt1308w-400d.pdf
BT1308W-400D,115
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 400V; 0.8A; SOT223; Igt: 5/7mA; Ifsm: 9A; 4Q; sensitive gate
Features of semiconductor devices: sensitive gate
Kind of package: reel; tape
Gate current: 5/7mA
Max. load current: 0.8A
Max. forward impulse current: 9A
Max. off-state voltage: 0.4kV
Technology: 4Q
Type of thyristor: triac
Case: SOT223
Mounting: SMD
auf Bestellung 1010 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
136+0.53 EUR
177+0.4 EUR
285+0.25 EUR
345+0.21 EUR
500+0.18 EUR
1000+0.16 EUR
Mindestbestellmenge: 136
Im Einkaufswagen  Stück im Wert von  UAH
BTA216B-600D,118 bta216b-600e.pdf
BTA216B-600D,118
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 16A; D2PAK; Igt: 5mA; Ifsm: 140A; 3Q,Hi-Com
Features of semiconductor devices: sensitive gate
Kind of package: reel; tape
Gate current: 5mA
Max. load current: 16A
Max. forward impulse current: 140A
Max. off-state voltage: 0.6kV
Technology: 3Q; Hi-Com
Type of thyristor: triac
Case: D2PAK
Mounting: SMD
auf Bestellung 616 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
61+1.19 EUR
67+1.07 EUR
75+0.96 EUR
100+0.84 EUR
Mindestbestellmenge: 61
Im Einkaufswagen  Stück im Wert von  UAH
BTA425X-800BQ bta425x-800b.pdf
BTA425X-800BQ
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 25A; TO220FP; Igt: 50mA; Ifsm: 250A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 25A
Case: TO220FP
Gate current: 50mA
Max. forward impulse current: 250A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
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