Produkte > NTB
| Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis ohne MwSt | ||||||||||||||||||
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| NTB | WELLER | WEL.NT-B Soldering tips | auf Bestellung 4 Stücke: Lieferzeit 7-14 Tag (e) |
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| NTB | Apex Tool Group B.V. | Soldering Tips For micro soldering pencil | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTB | WELLER | Description: WELLER - NTB - Lötspitze, meißelförmig, 2.4mm Breite der Spitze/Düse: 0 Spitze/Düse: 0 Zur Verwendung mit: Mikro-Lötkolben WMP von Weller Produktpalette: 0 SVHC: No SVHC (17-Dec-2015) | auf Bestellung 9 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| NTB | Weller | Soldering Irons Weller Chisel Tip For WMP Solder Penc | auf Bestellung 5 Stücke: Lieferzeit 10-14 Tag (e) |
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| NTB-C145B | NEW TRY | Description: LED ENG BLUE LINEAR STRIP Packaging: Case Color: Blue Size / Dimension: 155.00mm L x 21.00mm W Type: LED Engine Configuration: Linear Light Strip, Plug and Play Height: 29.00mm Current - Test: 420mA Lens Type: Flat Light Emitting Surface (LES): 147.00mm L x 14.00mm W Part Status: Active | auf Bestellung 1 Stücke: Lieferzeit 10-14 Tag (e) |
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| NTB-C145G | NEW TRY | Description: LED ENG GREEN LINEAR STRIP Packaging: Case Color: Green Size / Dimension: 155.00mm L x 21.00mm W Type: LED Engine Configuration: Linear Light Strip, Plug and Play Height: 29.00mm Current - Test: 420mA Lens Type: Flat Light Emitting Surface (LES): 147.00mm L x 14.00mm W Part Status: Active | auf Bestellung 1 Stücke: Lieferzeit 10-14 Tag (e) |
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| NTB-C145R | NEW TRY | Description: LED ENG RED LINEAR STRIP Packaging: Case Color: Red Size / Dimension: 155.00mm L x 21.00mm W Type: LED Engine Configuration: Linear Light Strip, Plug and Play Height: 29.00mm Current - Test: 420mA Lens Type: Flat Light Emitting Surface (LES): 147.00mm L x 14.00mm W Part Status: Active | auf Bestellung 1 Stücke: Lieferzeit 10-14 Tag (e) |
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| NTB-C145W | NEW TRY | Description: LED ENG WHITE LINEAR STRIP Packaging: Case Color: White Size / Dimension: 155.00mm L x 21.00mm W Type: LED Engine Configuration: Linear Light Strip, Plug and Play Height: 29.00mm Current - Test: 420mA Lens Type: Flat Light Emitting Surface (LES): 147.00mm L x 14.00mm W Part Status: Active | auf Bestellung 1 Stücke: Lieferzeit 10-14 Tag (e) |
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| NTB-C145W-A | NEW TRY | Description: LED ENG WHITE LINEAR STRIP Packaging: Case Color: White Size / Dimension: 155.00mm L x 21.00mm W Type: LED Engine Configuration: Linear Light Strip, Plug and Play Height: 29.00mm Current - Test: 420mA Lens Type: Flat Light Emitting Surface (LES): 147.00mm L x 14.00mm W Part Status: Active | auf Bestellung 1 Stücke: Lieferzeit 10-14 Tag (e) |
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| NTB-C220B | NEW TRY | Description: LED ENG BLUE LINEAR STRIP Packaging: Case Color: Blue Size / Dimension: 230.00mm L x 21.00mm W Type: LED Engine Configuration: Linear Light Strip, Plug and Play Height: 29.00mm Current - Test: 530mA Lens Type: Flat Light Emitting Surface (LES): 220.00mm L x 14.00mm W Part Status: Active | auf Bestellung 1 Stücke: Lieferzeit 10-14 Tag (e) |
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| NTB-C220G | NEW TRY | Description: LED ENG GREEN LINEAR STRIP Packaging: Case Color: Green Size / Dimension: 230.00mm L x 21.00mm W Type: LED Engine Configuration: Linear Light Strip, Plug and Play Height: 29.00mm Current - Test: 530mA Lens Type: Flat Light Emitting Surface (LES): 220.00mm L x 14.00mm W Part Status: Active | auf Bestellung 1 Stücke: Lieferzeit 10-14 Tag (e) |
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| NTB-C220R | NEW TRY | Description: LED ENG RED LINEAR STRIP Packaging: Case Color: Red Size / Dimension: 230.00mm L x 21.00mm W Type: LED Engine Configuration: Linear Light Strip, Plug and Play Height: 29.00mm Current - Test: 530mA Lens Type: Flat Light Emitting Surface (LES): 220.00mm L x 14.00mm W Part Status: Active | auf Bestellung 1 Stücke: Lieferzeit 10-14 Tag (e) |
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| NTB-C220W | NEW TRY | Description: LED ENG WHITE LINEAR STRIP Packaging: Case Color: White Size / Dimension: 230.00mm L x 21.00mm W Type: LED Engine Configuration: Linear Light Strip, Plug and Play Height: 29.00mm Current - Test: 530mA Lens Type: Flat Light Emitting Surface (LES): 220.00mm L x 14.00mm W Part Status: Active | auf Bestellung 1 Stücke: Lieferzeit 10-14 Tag (e) |
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| NTB-C295R | NEW TRY | Description: LED ENG RED LINEAR STRIP Packaging: Case Color: Red Size / Dimension: 305.00mm L x 21.00mm W Type: LED Engine Configuration: Linear Light Strip, Plug and Play Height: 29.00mm Current - Test: 720mA Lens Type: Flat Light Emitting Surface (LES): 295.00mm L x 14.00mm W Part Status: Active | auf Bestellung 1 Stücke: Lieferzeit 10-14 Tag (e) |
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| NTB-C295W | NEW TRY | Description: LED ENG WHITE LINEAR STRIP Packaging: Case Color: White Size / Dimension: 305.00mm L x 21.00mm W Type: LED Engine Configuration: Linear Light Strip, Plug and Play Height: 29.00mm Current - Test: 720mA Lens Type: Flat Light Emitting Surface (LES): 295.00mm L x 14.00mm W Part Status: Active | auf Bestellung 1 Stücke: Lieferzeit 10-14 Tag (e) |
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| NTB-C370B | NEW TRY | Description: LED ENG BLUE LINEAR STRIP Packaging: Case Color: Blue Size / Dimension: 308.00mm L x 21.00mm W Type: LED Engine Configuration: Linear Light Strip, Plug and Play Height: 29.00mm Current - Test: 950mA Lens Type: Flat Light Emitting Surface (LES): 370.00mm L x 14.00mm W | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTB-C370G | NEW TRY | Description: LED ENG GREEN LINEAR STRIP Packaging: Case Color: Green Size / Dimension: 308.00mm L x 21.00mm W Type: LED Engine Configuration: Linear Light Strip, Plug and Play Height: 29.00mm Current - Test: 950mA Lens Type: Flat Light Emitting Surface (LES): 370.00mm L x 14.00mm W | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTB-C370R | NEW TRY | Description: LED ENG RED LINEAR STRIP Packaging: Case Color: Red Size / Dimension: 308.00mm L x 21.00mm W Type: LED Engine Configuration: Linear Light Strip, Plug and Play Height: 29.00mm Current - Test: 950mA Lens Type: Flat Light Emitting Surface (LES): 370.00mm L x 14.00mm W Part Status: Active | auf Bestellung 1 Stücke: Lieferzeit 10-14 Tag (e) |
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| NTB-C370W | NEW TRY | Description: LED ENG WHITE LINEAR STRIP Packaging: Case Color: White Size / Dimension: 308.00mm L x 21.00mm W Type: LED Engine Configuration: Linear Light Strip, Plug and Play Height: 29.00mm Current - Test: 950mA Lens Type: Flat Light Emitting Surface (LES): 370.00mm L x 14.00mm W Part Status: Active | auf Bestellung 1 Stücke: Lieferzeit 10-14 Tag (e) |
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| NTB-C445B | NEW TRY | Description: LED ENG BLUE Packaging: Case Color: Blue Type: LED Engine Part Status: Active | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTB-C445G | NEW TRY | Description: LED ENG GREEN Packaging: Case Color: Green Type: LED Engine Part Status: Active | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTB-C445R | NEW TRY | Description: LED ENG RED Packaging: Case Color: Red Type: LED Engine Part Status: Active | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTB-C445W | NEW TRY | Description: LED ENG WHITE Packaging: Case Color: White Type: LED Engine Part Status: Active | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTB-C75B | NEW TRY | Description: LED ENG BLUE LINEAR STRIP Packaging: Case Color: Blue Size / Dimension: 80.50mm L x 21.00mm W Type: LED Engine Configuration: Linear Light Strip, Plug and Play Height: 29.00mm Current - Test: 210mA Lens Type: Flat Light Emitting Surface (LES): 72.50mm L x 14.00mm W Part Status: Active | auf Bestellung 1 Stücke: Lieferzeit 10-14 Tag (e) |
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| NTB-C75G | NEW TRY | Description: LED ENG GREEN LINEAR STRIP Packaging: Case Color: Green Size / Dimension: 80.50mm L x 21.00mm W Type: LED Engine Configuration: Linear Light Strip, Plug and Play Height: 29.00mm Current - Test: 210mA Lens Type: Flat Light Emitting Surface (LES): 72.50mm L x 14.00mm W Part Status: Active | auf Bestellung 1 Stücke: Lieferzeit 10-14 Tag (e) |
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| NTB-C75R | NEW TRY | Description: LED ENG RED LINEAR STRIP Packaging: Case Color: Red Size / Dimension: 80.50mm L x 21.00mm W Type: LED Engine Configuration: Linear Light Strip, Plug and Play Height: 29.00mm Current - Test: 210mA Lens Type: Flat Light Emitting Surface (LES): 72.50mm L x 14.00mm W Part Status: Active | auf Bestellung 1 Stücke: Lieferzeit 10-14 Tag (e) |
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| NTB-C75W | NEW TRY | Description: LED ENG WHITE LINEAR STRIP Packaging: Case Color: White Size / Dimension: 80.50mm L x 21.00mm W Type: LED Engine Configuration: Linear Light Strip, Plug and Play Height: 29.00mm Current - Test: 210mA Lens Type: Flat Light Emitting Surface (LES): 72.50mm L x 14.00mm W Part Status: Active | auf Bestellung 1 Stücke: Lieferzeit 10-14 Tag (e) |
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| NTB-D149B-P | NEW TRY | Description: LED ENG BLUE LINEAR STRIP Packaging: Case Color: Blue Size / Dimension: 155.00mm L x 25.00mm W Type: LED Engine Configuration: Linear Light Strip, Plug and Play Height: 31.50mm Current - Test: 430mA Lens Type: Flat Part Status: Active | auf Bestellung 1 Stücke: Lieferzeit 10-14 Tag (e) |
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| NTB-D149R-P | NEW TRY | Description: LED ENG RED LINEAR STRIP Packaging: Case Color: Red Size / Dimension: 155.00mm L x 25.00mm W Type: LED Engine Configuration: Linear Light Strip, Plug and Play Height: 31.50mm Current - Test: 270mA Lens Type: Flat Part Status: Active | auf Bestellung 1 Stücke: Lieferzeit 10-14 Tag (e) |
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| NTB-D149W-P | NEW TRY | Description: LED ENG WHITE LINEAR STRIP Packaging: Case Color: White Size / Dimension: 155.00mm L x 25.00mm W Type: LED Engine Configuration: Linear Light Strip, Plug and Play Height: 31.50mm Current - Test: 430mA Lens Type: Flat Part Status: Active | auf Bestellung 1 Stücke: Lieferzeit 10-14 Tag (e) |
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| NTB-D298B-P | NEW TRY | Description: LED ENG BLUE LINEAR STRIP Packaging: Case Color: Blue Size / Dimension: 304.00mm L x 25.00mm W Type: LED Engine Configuration: Linear Light Strip, Plug and Play Height: 31.50mm Current - Test: 870mA Lens Type: Flat Part Status: Active | auf Bestellung 1 Stücke: Lieferzeit 10-14 Tag (e) |
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| NTB-D298R-P | NEW TRY | Description: LED ENG RED LINEAR STRIP Packaging: Case Color: Red Size / Dimension: 304.00mm L x 25.00mm W Type: LED Engine Configuration: Linear Light Strip, Plug and Play Height: 31.50mm Current - Test: 520mA Lens Type: Flat Part Status: Active | auf Bestellung 1 Stücke: Lieferzeit 10-14 Tag (e) |
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| NTB-D298W-P | NEW TRY | Description: LED ENG WHITE LINEAR STRIP Packaging: Case Color: White Size / Dimension: 304.00mm L x 25.00mm W Type: LED Engine Configuration: Linear Light Strip, Plug and Play Height: 31.50mm Current - Test: 870mA Lens Type: Flat Part Status: Active | auf Bestellung 1 Stücke: Lieferzeit 10-14 Tag (e) |
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| NTB-D447B-P | NEW TRY | Description: LED ENG BLUE LINEAR STRIP Packaging: Case Color: Blue Size / Dimension: 453.00mm L x 25.00mm W Type: LED Engine Configuration: Linear Light Strip, Plug and Play Height: 31.50mm Current - Test: 1.29A Lens Type: Flat Part Status: Active | auf Bestellung 1 Stücke: Lieferzeit 10-14 Tag (e) |
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| NTB-D447R-P | NEW TRY | Description: LED ENG RED LINEAR STRIP Packaging: Case Color: Red Size / Dimension: 453.00mm L x 25.00mm W Type: LED Engine Configuration: Linear Light Strip, Plug and Play Height: 31.50mm Current - Test: 780mA Lens Type: Flat Part Status: Active | auf Bestellung 1 Stücke: Lieferzeit 10-14 Tag (e) |
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| NTB-D447W-P | NEW TRY | Description: LED ENG WHITE LINEAR STRIP Packaging: Case Color: White Size / Dimension: 453.00mm L x 25.00mm W Type: LED Engine Configuration: Linear Light Strip, Plug and Play Height: 31.50mm Current - Test: 1.29A Lens Type: Flat Part Status: Active | auf Bestellung 1 Stücke: Lieferzeit 10-14 Tag (e) |
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| NTB-D596B-P | NEW TRY | Description: LED ENG BLUE LINEAR STRIP Packaging: Case Color: Blue Size / Dimension: 602.00mm L x 25.00mm W Type: LED Engine Configuration: Linear Light Strip, Plug and Play Height: 31.50mm Current - Test: 1.68A Lens Type: Flat Part Status: Active | auf Bestellung 1 Stücke: Lieferzeit 10-14 Tag (e) |
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| NTB-D596R-P | NEW TRY | Description: LED ENG RED LINEAR STRIP Packaging: Case Color: Red Size / Dimension: 602.00mm L x 25.00mm W Type: LED Engine Configuration: Linear Light Strip, Plug and Play Height: 31.50mm Current - Test: 1A Lens Type: Flat Part Status: Active | auf Bestellung 1 Stücke: Lieferzeit 10-14 Tag (e) |
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| NTB-D596W-P | NEW TRY | Description: LED ENG WHITE LINEAR STRIP Packaging: Case Color: White Size / Dimension: 602.00mm L x 25.00mm W Type: LED Engine Configuration: Linear Light Strip, Plug and Play Height: 31.50mm Current - Test: 1.68A Lens Type: Flat Part Status: Active | auf Bestellung 1 Stücke: Lieferzeit 10-14 Tag (e) |
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| NTB-D745B-P | NEW TRY | Description: LED ENG BLUE LINEAR STRIP Packaging: Case Color: Blue Size / Dimension: 751.00mm L x 25.00mm W Type: LED Engine Configuration: Linear Light Strip, Plug and Play Height: 31.50mm Current - Test: 2A Lens Type: Flat Part Status: Active | auf Bestellung 1 Stücke: Lieferzeit 10-14 Tag (e) |
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| NTB-D745R-P | NEW TRY | Description: LED ENG RED LINEAR STRIP Packaging: Case Color: Red Size / Dimension: 751.00mm L x 25.00mm W Type: LED Engine Configuration: Linear Light Strip, Plug and Play Height: 31.50mm Current - Test: 1.2A Lens Type: Flat Part Status: Active | auf Bestellung 1 Stücke: Lieferzeit 10-14 Tag (e) |
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| NTB-D745W-P | NEW TRY | Description: LED ENG WHITE LINEAR STRIP Packaging: Case Color: White Size / Dimension: 751.00mm L x 25.00mm W Type: LED Engine Configuration: Linear Light Strip, Plug and Play Height: 31.50mm Current - Test: 2A Lens Type: Flat Part Status: Active | auf Bestellung 1 Stücke: Lieferzeit 10-14 Tag (e) |
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| NTB004N10G | onsemi | Description: MOSFET N-CH 100V 201A TO263 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 201A (Ta) Rds On (Max) @ Id, Vgs: 4.2mOhm @ 100A, 10V Power Dissipation (Max): 340W (Tc) Vgs(th) (Max) @ Id: 4V @ 500µA Supplier Device Package: TO-263 (D2Pak) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 175 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11900 pF @ 50 V | auf Bestellung 9873 Stücke: Lieferzeit 10-14 Tag (e) |
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| NTB004N10G | onsemi | MOSFET Power MOSFET 201 Amps, 100 Volts N-Channel Enhancement - Mode D2PAK | auf Bestellung 748 Stücke: Lieferzeit 10-14 Tag (e) |
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| NTB004N10G | ONSEMI | Description: ONSEMI - NTB004N10G - Leistungs-MOSFET, n-Kanal, 100 V, 201 A, 0.0034 ohm, TO-263 (D2PAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: Y-EX Dauer-Drainstrom Id: 201A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.8V euEccn: NLR Verlustleistung: 340W Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0034ohm | auf Bestellung 1848 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| NTB004N10G | ON Semiconductor | auf Bestellung 5 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||||
| NTB004N10G | onsemi | Description: MOSFET N-CH 100V 201A TO263 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 201A (Ta) Rds On (Max) @ Id, Vgs: 4.2mOhm @ 100A, 10V Power Dissipation (Max): 340W (Tc) Vgs(th) (Max) @ Id: 4V @ 500µA Supplier Device Package: TO-263 (D2Pak) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 175 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11900 pF @ 50 V | auf Bestellung 9600 Stücke: Lieferzeit 10-14 Tag (e) |
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| NTB004N10G | ON Semiconductor | Trans MOSFET N-CH 100V 201A 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTB004N10G | ONSEMI | Description: ONSEMI - NTB004N10G - Leistungs-MOSFET, n-Kanal, 100 V, 201 A, 0.0034 ohm, TO-263 (D2PAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: Y-EX Dauer-Drainstrom Id: 201A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.8V euEccn: NLR Verlustleistung: 340W Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0034ohm | auf Bestellung 1848 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| NTB0101AGWH | NXP | Description: NXP - NTB0101AGWH - Logik, Transceiver, Umsetzung, Produktfamilie NTB0101A, 1.65V-5.5V Versorgungsspannung, SC-88-6 Logik-IC-Sockelnummer: - Logik-IC-Familie: - Bauform - Logikbaustein: SC-88 MSL: MSL 1 - unbegrenzt Betriebstemperatur, min.: -40 Versorgungsspannung, min.: 1.65 Logikfamilie / Sockelnummer: NTB0101A Logikbaustein: Transceiver, umsetzend Qualifizierungsstandard der Automobilindustrie: - Anzahl der Pins: 6 Produktpalette: - Versorgungsspannung, max.: 5.5 Betriebstemperatur, max.: 125 SVHC: No SVHC (15-Jan-2019) | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTB0101AGWH | NXP USA Inc. | Description: IC TRANSLTR BIDIRECTIONAL 6TSSOP Packaging: Cut Tape (CT) Features: Auto-Direction Sensing Package / Case: 6-TSSOP, SC-88, SOT-363 Output Type: Non-Inverted Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TA) Data Rate: 100Mbps Supplier Device Package: 6-TSSOP Channel Type: Bidirectional Translator Type: Voltage Level Channels per Circuit: 1 Voltage - VCCA: 1.2 V ~ 3.6 V Voltage - VCCB: 1.65 V ~ 5.5 V Number of Circuits: 1 | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTB0101AGWH | NXP Semiconductors | Voltage Level Translator 1-CH Bidirectional 6-Pin TSSOP T/R | auf Bestellung 60 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| NTB0101AGWH | NXP Semiconductors | Voltage Level Translator 1-CH Bidirectional 6-Pin TSSOP T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTB0101AGWH | NXP USA Inc. | Description: IC TRANSLTR BIDIRECTIONAL 6TSSOP Packaging: Tape & Reel (TR) Features: Auto-Direction Sensing Package / Case: 6-TSSOP, SC-88, SOT-363 Output Type: Non-Inverted Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TA) Data Rate: 100Mbps Supplier Device Package: 6-TSSOP Channel Type: Bidirectional Translator Type: Voltage Level Channels per Circuit: 1 Voltage - VCCA: 1.2 V ~ 3.6 V Voltage - VCCB: 1.65 V ~ 5.5 V Number of Circuits: 1 | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTB0101AGWH | NXP | Description: NXP - NTB0101AGWH - Logik, Transceiver, Umsetzung, Produktfamilie NTB0101A, 1.65V-5.5V Versorgungsspannung, SC-88-6 Logik-IC-Sockelnummer: - Logik-IC-Familie: - Bauform - Logikbaustein: SC-88 MSL: MSL 1 - unbegrenzt Betriebstemperatur, min.: -40 Versorgungsspannung, min.: 1.65 Logikfamilie / Sockelnummer: NTB0101A Logikbaustein: Transceiver, umsetzend Qualifizierungsstandard der Automobilindustrie: - Anzahl der Pins: 6 Produktpalette: - Versorgungsspannung, max.: 5.5 Betriebstemperatur, max.: 125 SVHC: No SVHC (15-Jan-2019) | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTB0101AGWH | NXP Semiconductors | Voltage Level Translator 1-CH Bidirectional 6-Pin TSSOP T/R | auf Bestellung 60 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| NTB0101AGWH | NXP Semiconductors | Description: IC TRANSLTR BIDIRECTIONAL SOT363 Packaging: Bulk Package / Case: 6-TSSOP, SC-88, SOT-363 Output Type: Non-Inverted Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TA) Data Rate: 100Mbps Supplier Device Package: SOT-363 Channel Type: Bidirectional Translator Type: Voltage Level Channels per Circuit: 1 Voltage - VCCA: 1.65 V ~ 3.6 V Voltage - VCCB: 2.3 V ~ 5.5 V Number of Circuits: 1 | auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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| NTB0101AGWH | NXP Semiconductors | Translation - Voltage Levels Dual supply translating transcvr | auf Bestellung 64 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||||
| NTB0101GF | auf Bestellung 120000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
| NTB0101GF,132 | NXP Semiconductors | Voltage Level Translator 1-CH Bidirectional 6-Pin XSON T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTB0101GF,132 | NXP USA Inc. | Description: IC TRNSLTR BIDIRECTIONAL 6XSON | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTB0101GF,132 | NXP Semiconductors | Voltage Level Translator 1-CH Bidirectional 6-Pin XSON T/R | auf Bestellung 4853 Stücke: Lieferzeit 14-21 Tag (e) |
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| NTB0101GF,132 | NXP Semiconductors | Translation - Voltage Levels 4.2ns 6.5V 250mW OD | auf Bestellung 7930 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||||
| NTB0101GF,132 | NXP USA Inc. | Description: IC TRNSLTR BIDIRECTIONAL 6XSON | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTB0101GF,132 | NXP USA Inc. | Description: IC TRNSLTR BIDIRECTIONAL 6XSON | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTB0101GM | auf Bestellung 120000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
| NTB0101GM,115 | NXP Semiconductors | Voltage Level Translator 1-CH Bidirectional 6-Pin XSON T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTB0101GM,115 | NXP USA Inc. | Description: IC TRANSLTR BIDIRECTIONAL 6XSON Packaging: Cut Tape (CT) Features: Auto-Direction Sensing Package / Case: 6-XFDFN Output Type: Tri-State, Non-Inverted Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TA) Data Rate: 100Mbps Supplier Device Package: 6-XSON, SOT886 (1.45x1) Channel Type: Bidirectional Translator Type: Voltage Level Channels per Circuit: 1 Voltage - VCCA: 1.2 V ~ 3.6 V Voltage - VCCB: 1.65 V ~ 5.5 V Number of Circuits: 1 | auf Bestellung 1292 Stücke: Lieferzeit 10-14 Tag (e) |
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| NTB0101GM,115 | NXP Semiconductors | Translation - Voltage Levels 4.2ns 5.5V 250mW OD | auf Bestellung 4595 Stücke: Lieferzeit 10-14 Tag (e) |
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| NTB0101GM,115 | NXP USA Inc. | Description: IC TRANSLTR BIDIRECTIONAL 6XSON Packaging: Tape & Reel (TR) Features: Auto-Direction Sensing Package / Case: 6-XFDFN Output Type: Tri-State, Non-Inverted Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TA) Data Rate: 100Mbps Supplier Device Package: 6-XSON, SOT886 (1.45x1) Channel Type: Bidirectional Translator Type: Voltage Level Channels per Circuit: 1 Voltage - VCCA: 1.2 V ~ 3.6 V Voltage - VCCB: 1.65 V ~ 5.5 V Number of Circuits: 1 | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTB0101GM,115 | NXP Semiconductors | Voltage Level Translator 1-CH Bidirectional 6-Pin XSON T/R | auf Bestellung 4971 Stücke: Lieferzeit 14-21 Tag (e) |
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| NTB0101GN,132 | NXP USA Inc. | Description: IC TRNSLTR BIDIRECTIONAL 6XSON Features: Auto-Direction Sensing Packaging: Cut Tape (CT) Package / Case: 6-XFDFN Output Type: Tri-State, Non-Inverted Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TA) Data Rate: 100Mbps Supplier Device Package: 6-XSON, SOT1115 (0.9x1) Channel Type: Bidirectional Translator Type: Voltage Level Channels per Circuit: 1 Voltage - VCCA: 1.2 V ~ 3.6 V Voltage - VCCB: 1.65 V ~ 5.5 V Part Status: Obsolete Number of Circuits: 1 | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTB0101GN,132 | NXP USA Inc. | Description: IC TRNSLTR BIDIRECTIONAL 6XSON Packaging: Tape & Reel (TR) Features: Auto-Direction Sensing Package / Case: 6-XFDFN Output Type: Tri-State, Non-Inverted Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TA) Data Rate: 100Mbps Supplier Device Package: 6-XSON, SOT1115 (0.9x1) Channel Type: Bidirectional Translator Type: Voltage Level Channels per Circuit: 1 Voltage - VCCA: 1.2 V ~ 3.6 V Voltage - VCCB: 1.65 V ~ 5.5 V Part Status: Obsolete Number of Circuits: 1 | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTB0101GN132 | NXP USA Inc. | Description: IC TRNSLTR BIDIRECTIONAL 6XSON | auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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| NTB0101GS,132 | NXP USA Inc. | Description: IC TRANSLTR BIDIRECTIONAL 6XSON Features: Auto-Direction Sensing Packaging: Cut Tape (CT) Package / Case: 6-XFDFN Output Type: Tri-State, Non-Inverted Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TA) Data Rate: 100Mbps Supplier Device Package: 6-XSON, SOT1202 (1x1) Channel Type: Bidirectional Translator Type: Voltage Level Channels per Circuit: 1 Voltage - VCCA: 1.2 V ~ 3.6 V Voltage - VCCB: 1.65 V ~ 5.5 V Part Status: Obsolete Number of Circuits: 1 | auf Bestellung 2254 Stücke: Lieferzeit 10-14 Tag (e) |
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| NTB0101GS,132 | NXP USA Inc. | Description: IC TRANSLTR BIDIRECTIONAL 6XSON Packaging: Tape & Reel (TR) Features: Auto-Direction Sensing Package / Case: 6-XFDFN Output Type: Tri-State, Non-Inverted Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TA) Data Rate: 100Mbps Supplier Device Package: 6-XSON, SOT1202 (1x1) Channel Type: Bidirectional Translator Type: Voltage Level Channels per Circuit: 1 Voltage - VCCA: 1.2 V ~ 3.6 V Voltage - VCCB: 1.65 V ~ 5.5 V Part Status: Obsolete Number of Circuits: 1 | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTB0101GS,132 | NXP Semiconductors | Translation - Voltage Levels Transceiver Dual Supply | auf Bestellung 4035 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||||
| NTB0101GS132 | NXP USA Inc. | Description: LINE TRANSCEIVER | auf Bestellung 3326 Stücke: Lieferzeit 10-14 Tag (e) |
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| NTB0101GS1XL | NXP USA Inc. | Description: IC PWR 1BIT BIDIRECTION 6X2SON | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTB0101GS1Z | NXP | Description: NXP - NTB0101GS1Z - Logik, Transceiver, Umsetzung, Produktfamilie NTB0101, 1.65V-5.5V Versorgungsspannung, X2SON-6 Logik-IC-Sockelnummer: - Logik-IC-Familie: - Bauform - Logikbaustein: X2SON MSL: MSL 1 - unbegrenzt Betriebstemperatur, min.: -40 Versorgungsspannung, min.: 1.65 Logikfamilie / Sockelnummer: NTB0101 Logikbaustein: Transceiver, umsetzend Anzahl der Pins: 6 Produktpalette: - Versorgungsspannung, max.: 5.5 Betriebstemperatur, max.: 125 SVHC: No SVHC (08-Jul-2021) | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTB0101GS1Z | NXP Semiconductors | Translation - Voltage Levels 1bit bidirection push-pull xlator | auf Bestellung 8922 Stücke: Lieferzeit 10-14 Tag (e) |
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| NTB0101GS1Z | NXP USA Inc. | Description: IC TRANSLTR BIDIRECTIONAL 6X2SON Packaging: Cut Tape (CT) Package / Case: 6-XFDFN Output Type: Tri-State, Non-Inverted Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TA) Data Rate: 100Mbps Supplier Device Package: 6-X2SON (1x1) Channel Type: Bidirectional Translator Type: Voltage Level Channels per Circuit: 1 Voltage - VCCA: 1.2 V ~ 3.6 V Voltage - VCCB: 1.65 V ~ 5.5 V Part Status: Obsolete Number of Circuits: 1 | auf Bestellung 9680 Stücke: Lieferzeit 10-14 Tag (e) |
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| NTB0101GS1Z | NXP Semiconductors | Voltage Level Translator | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTB0101GS1Z | NXP | Description: NXP - NTB0101GS1Z - Logik, Transceiver, Umsetzung, Produktfamilie NTB0101, 1.65V-5.5V Versorgungsspannung, X2SON-6 SVHC: No SVHC (08-Jul-2021) | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTB0101GS1Z | NXP USA Inc. | Description: IC TRANSLTR BIDIRECTIONAL 6X2SON Packaging: Tape & Reel (TR) Package / Case: 6-XFDFN Output Type: Tri-State, Non-Inverted Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TA) Data Rate: 100Mbps Supplier Device Package: 6-X2SON (1x1) Channel Type: Bidirectional Translator Type: Voltage Level Channels per Circuit: 1 Voltage - VCCA: 1.2 V ~ 3.6 V Voltage - VCCB: 1.65 V ~ 5.5 V Part Status: Obsolete Number of Circuits: 1 | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTB0101GW,125 | NXP | Description: NXP - NTB0101GW,125 - Transceiver, 1.2V bis 3.6V, SC-88-6 Logik-IC-Sockelnummer: - Logik-IC-Familie: NT Bauform - Logikbaustein: SC-88 MSL: MSL 1 - unbegrenzt Betriebstemperatur, min.: -40 Versorgungsspannung, min.: 1.2 Logikfamilie / Sockelnummer: - Logikbaustein: Transceiver, umsetzend Anzahl der Pins: 6 Produktpalette: - Versorgungsspannung, max.: 3.6 Betriebstemperatur, max.: 125 SVHC: No SVHC (17-Jan-2022) | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTB0101GW,125 | NXP USA Inc. | Description: IC TRANSLTR BIDIRECTIONAL 6TSSOP Packaging: Tape & Reel (TR) Features: Auto-Direction Sensing Package / Case: 6-TSSOP, SC-88, SOT-363 Output Type: Tri-State, Non-Inverted Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TA) Data Rate: 100Mbps Supplier Device Package: 6-TSSOP Channel Type: Bidirectional Translator Type: Voltage Level Channels per Circuit: 1 Voltage - VCCA: 1.2 V ~ 3.6 V Voltage - VCCB: 1.65 V ~ 5.5 V Part Status: Not For New Designs Number of Circuits: 1 | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTB0101GW,125 | NXP Semiconductors | Voltage Level Translator 1-CH Bidirectional 6-Pin TSSOP T/R | auf Bestellung 6866 Stücke: Lieferzeit 14-21 Tag (e) |
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| NTB0101GW,125 | NXP | Description: NXP - NTB0101GW,125 - Transceiver, 1.2V bis 3.6V, SC-88-6 SVHC: No SVHC (17-Jan-2022) | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTB0101GW,125 | NXP USA Inc. | Description: IC TRANSLTR BIDIRECTIONAL 6TSSOP Features: Auto-Direction Sensing Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Output Type: Tri-State, Non-Inverted Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TA) Data Rate: 100Mbps Supplier Device Package: 6-TSSOP Channel Type: Bidirectional Translator Type: Voltage Level Channels per Circuit: 1 Voltage - VCCA: 1.2 V ~ 3.6 V Voltage - VCCB: 1.65 V ~ 5.5 V Part Status: Not For New Designs Number of Circuits: 1 | auf Bestellung 3708 Stücke: Lieferzeit 10-14 Tag (e) |
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| NTB0101GW,125 | NXP Semiconductors | Voltage Level Translator 1-CH Bidirectional 6-Pin TSSOP T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTB0101GW,125 | NXP Semiconductors | Translation - Voltage Levels Transceiver Dual Supply | auf Bestellung 7553 Stücke: Lieferzeit 10-14 Tag (e) |
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| NTB0101GW-Q100H | NXP Semiconductors | Voltage Level Translator 1-CH Bidirectional Automotive 6-Pin TSSOP T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTB0101GW-Q100H | NXP USA Inc. | Description: IC TRNSLTR BIDIRECTIONAL 6TSSOP | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTB0101GW-Q100H | NXP Semiconductors | Voltage Level Translator 1-CH Bidirectional Automotive 6-Pin TSSOP T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTB0101GW-Q100H | NXP Semiconductors | Translation - Voltage Levels Dual supply translating transcvr | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTB0102DP | NXP | Voltage Level Translation Bidirectional Dual supply; 100Mbps; 250mW; 1,65V~5,5V; -40°C~85°C; Substitute: NTB0102DP,125; NTB0102DP UINTB0102dp Anzahl je Verpackung: 5 Stücke | auf Bestellung 5 Stücke: Lieferzeit 7-14 Tag (e) |
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| NTB0102DP,125 | NXP Semiconductors | Voltage Level Translator 2-CH Bidirectional 8-Pin TSSOP T/R | auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| NTB0102DP,125 | NXP Semiconductors | Translation - Voltage Levels 4.4ns 6.5V 250mW | auf Bestellung 4100 Stücke: Lieferzeit 10-14 Tag (e) |
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| NTB0102DP,125 | NXP | Description: NXP - NTB0102DP,125 - Pegelumsetzer, Transceiver, 2 Eingänge, 5.9ns, 1.65V bis 5.5V, TSSOP-8 Bauform - Logikbaustein: TSSOP Ausgangsstrom: - MSL: MSL 1 - unbegrenzt Betriebstemperatur, min.: -40 Versorgungsspannung, min.: 1.65 Logiktyp: Umsetzender Transceiver Ausbreitungsverzögerung: 5.9 Anzahl der Pins: 8 Produktpalette: - Versorgungsspannung, max.: 5.5 Anzahl der Eingänge: 2 Betriebstemperatur, max.: 125 SVHC: No SVHC (17-Jan-2022) | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTB0102DP,125 | NXP USA Inc. | Description: IC TRANSLTR BIDIRECTIONAL 8TSSOP Packaging: Cut Tape (CT) Features: Auto-Direction Sensing Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Output Type: Tri-State, Non-Inverted Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TA) Data Rate: 100Mbps Supplier Device Package: 8-TSSOP Channel Type: Bidirectional Translator Type: Voltage Level Channels per Circuit: 2 Voltage - VCCA: 1.2 V ~ 3.6 V Voltage - VCCB: 1.65 V ~ 5.5 V Part Status: Active Number of Circuits: 1 | auf Bestellung 14979 Stücke: Lieferzeit 10-14 Tag (e) |
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| NTB0102DP,125 | NXP | Description: NXP - NTB0102DP,125 - Pegelumsetzer, Transceiver, 2 Eingänge, 5.9ns, 1.65V bis 5.5V, TSSOP-8 SVHC: No SVHC (17-Jan-2022) | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTB0102DP,125 | NXP Semiconductors | Voltage Level Translator 2-CH Bidirectional 8-Pin TSSOP T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTB0102DP,125 | NXP Semiconductors | Voltage Level Translator 2-CH Bidirectional 8-Pin TSSOP T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTB0102DP,125 | NXP USA Inc. | Description: IC TRANSLTR BIDIRECTIONAL 8TSSOP Packaging: Tape & Reel (TR) Features: Auto-Direction Sensing Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Output Type: Tri-State, Non-Inverted Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TA) Data Rate: 100Mbps Supplier Device Package: 8-TSSOP Channel Type: Bidirectional Translator Type: Voltage Level Channels per Circuit: 2 Voltage - VCCA: 1.2 V ~ 3.6 V Voltage - VCCB: 1.65 V ~ 5.5 V Part Status: Active Number of Circuits: 1 | auf Bestellung 12000 Stücke: Lieferzeit 10-14 Tag (e) |
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| NTB0102DP-Q100125 | NXP USA Inc. | Description: DUAL SUPPLY TRANSLATING TRANSCEI | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTB0102DP-Q100H | NXP USA Inc. | Description: IC TRANSLTR BIDIRECTIONAL 8TSSOP Features: Auto-Direction Sensing Packaging: Cut Tape (CT) Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Output Type: Tri-State, Non-Inverted Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TA) Data Rate: 100Mbps Supplier Device Package: 8-TSSOP Channel Type: Bidirectional Translator Type: Voltage Level Channels per Circuit: 2 Voltage - VCCA: 1.2 V ~ 3.6 V Voltage - VCCB: 1.65 V ~ 5.5 V Part Status: Active Number of Circuits: 1 | auf Bestellung 14363 Stücke: Lieferzeit 10-14 Tag (e) |
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| NTB0102DP-Q100H | NXP Semiconductors | Voltage Level Translator 2-CH Bidirectional Automotive 8-Pin TSSOP T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTB0102DP-Q100H | NXP | Description: NXP - NTB0102DP-Q100H - Pegelumsetzer, Transceiver, AEC-Q100, 2 Eingänge, 5.9ns, 1.65V bis 5.5V, TSSOP-8 SVHC: No SVHC (17-Jan-2022) | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTB0102DP-Q100H | NXP USA Inc. | Description: IC TRANSLTR BIDIRECTIONAL 8TSSOP Features: Auto-Direction Sensing Packaging: Tape & Reel (TR) Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Output Type: Tri-State, Non-Inverted Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TA) Data Rate: 100Mbps Supplier Device Package: 8-TSSOP Channel Type: Bidirectional Translator Type: Voltage Level Channels per Circuit: 2 Voltage - VCCA: 1.2 V ~ 3.6 V Voltage - VCCB: 1.65 V ~ 5.5 V Part Status: Active Number of Circuits: 1 | auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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| NTB0102DP-Q100H | NXP Semiconductors | Translation - Voltage Levels Dual supply translating transcvr | auf Bestellung 4032 Stücke: Lieferzeit 10-14 Tag (e) |
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| NTB0102DP-Q100H | NXP | Description: NXP - NTB0102DP-Q100H - Pegelumsetzer, Transceiver, AEC-Q100, 2 Eingänge, 5.9ns, 1.65V bis 5.5V, TSSOP-8 Bauform - Logikbaustein: TSSOP Ausgangsstrom: - MSL: MSL 1 - unbegrenzt Betriebstemperatur, min.: -40 Versorgungsspannung, min.: 1.65 Logiktyp: Umsetzender Transceiver Ausbreitungsverzögerung: 5.9 Anzahl der Pins: 8 Produktpalette: - Versorgungsspannung, max.: 5.5 Anzahl der Eingänge: 2 Betriebstemperatur, max.: 125 SVHC: No SVHC (17-Jan-2022) | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTB0102DP-Q100H | NXP Semiconductors | Voltage Level Translator 2-CH Bidirectional Automotive 8-Pin TSSOP T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTB0102GD,125 | NXP Semiconductors | Translation - Voltage Levels Transceiver Dual Supply | auf Bestellung 1117 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||||
| NTB0102GD,125 | NXP Semiconductors | Voltage Level Translator 2-CH Bidirectional 8-Pin XSON8U T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTB0102GD,125 | NXP USA Inc. | Description: IC TRANSLTR BIDIRECTIONAL 8XSON Features: Auto-Direction Sensing Packaging: Cut Tape (CT) Package / Case: 8-XFDFN Output Type: Tri-State, Non-Inverted Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TA) Data Rate: 100Mbps Supplier Device Package: 8-XSON, SOT996-2 (2x3) Channel Type: Bidirectional Translator Type: Voltage Level Channels per Circuit: 2 Voltage - VCCA: 1.2 V ~ 3.6 V Voltage - VCCB: 1.65 V ~ 5.5 V Part Status: Obsolete Number of Circuits: 1 | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTB0102GD,125 | NXP Semiconductors | Voltage Level Translator 2-CH Bidirectional 8-Pin XSON8U T/R | auf Bestellung 9000 Stücke: Lieferzeit 14-21 Tag (e) |
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| NTB0102GD,125 | NXP USA Inc. | Description: IC TRANSLTR BIDIRECTIONAL 8XSON Packaging: Tape & Reel (TR) Features: Auto-Direction Sensing Package / Case: 8-XFDFN Output Type: Tri-State, Non-Inverted Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TA) Data Rate: 100Mbps Supplier Device Package: 8-XSON, SOT996-2 (2x3) Channel Type: Bidirectional Translator Type: Voltage Level Channels per Circuit: 2 Voltage - VCCA: 1.2 V ~ 3.6 V Voltage - VCCB: 1.65 V ~ 5.5 V Part Status: Obsolete Number of Circuits: 1 | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTB0102GD,125 | NXP Semiconductors | Voltage Level Translator 2-CH Bidirectional 8-Pin XSON8U T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTB0102GD-Q100 | NXP Semiconductors | Voltage Level Translator Automotive 8-Pin XSON | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTB0102GD-Q100H | NXP USA Inc. | Description: IC TRANSLTR BIDIRECTIONAL 8XSON | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTB0102GD-Q100H | NXP USA Inc. | Description: IC TRANSLTR BIDIRECTIONAL 8XSON | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTB0102GF | auf Bestellung 120000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
| NTB0102GF,115 | NXP USA Inc. | Description: IC TRNSLTR BIDIRECTIONAL 8XSON | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTB0102GF,115 | NXP Semiconductors | Voltage Level Translator 2-CH Bidirectional 8-Pin XSON T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTB0102GF,115 | NXP Semiconductors | Voltage Level Translator 2-CH Bidirectional 8-Pin XSON T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTB0102GF,115 | NXP USA Inc. | Description: IC TRNSLTR BIDIRECTIONAL 8XSON | auf Bestellung 1585 Stücke: Lieferzeit 10-14 Tag (e) |
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| NTB0102GF,115 | NXP Semiconductors | Translation - Voltage Levels DUAL XCVR AUTO DRECT SENSING; 3-STATE | auf Bestellung 4478 Stücke: Lieferzeit 10-14 Tag (e) |
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| NTB0102GT | auf Bestellung 120000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
| NTB0102GT,115 | NXP USA Inc. | Description: IC TRANSLTR BIDIRECTIONAL 8XSON Packaging: Tape & Reel (TR) Features: Auto-Direction Sensing Package / Case: 8-XFDFN Output Type: Tri-State, Non-Inverted Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TA) Data Rate: 100Mbps Supplier Device Package: 8-XSON, SOT833-1 (1.95x1) Channel Type: Bidirectional Translator Type: Voltage Level Channels per Circuit: 2 Voltage - VCCA: 1.2 V ~ 3.6 V Voltage - VCCB: 1.65 V ~ 5.5 V Part Status: Not For New Designs Number of Circuits: 1 | auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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| NTB0102GT,115 | NXP Semiconductors | Voltage Level Translator 2-CH Bidirectional 8-Pin XSON T/R | auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) |
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| NTB0102GT,115 | NXP Semiconductors | Translation - Voltage Levels DUAL SUPP 4.8ns 3.6V | auf Bestellung 23260 Stücke: Lieferzeit 10-14 Tag (e) |
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| NTB0102GT,115 | NXP Semiconductors | Voltage Level Translator 2-CH Bidirectional 8-Pin XSON T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTB0102GT,115 | NXP Semiconductors | Voltage Level Translator 2-CH Bidirectional 8-Pin XSON T/R | auf Bestellung 8788 Stücke: Lieferzeit 14-21 Tag (e) |
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| NTB0102GT,115 | NXP USA Inc. | Description: IC TRANSLTR BIDIRECTIONAL 8XSON Packaging: Cut Tape (CT) Features: Auto-Direction Sensing Package / Case: 8-XFDFN Output Type: Tri-State, Non-Inverted Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TA) Data Rate: 100Mbps Supplier Device Package: 8-XSON, SOT833-1 (1.95x1) Channel Type: Bidirectional Translator Type: Voltage Level Channels per Circuit: 2 Voltage - VCCA: 1.2 V ~ 3.6 V Voltage - VCCB: 1.65 V ~ 5.5 V Part Status: Not For New Designs Number of Circuits: 1 | auf Bestellung 6379 Stücke: Lieferzeit 10-14 Tag (e) |
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| NTB0102JKZ | NXP Semiconductors | Translation - Voltage Levels NTB0102JK | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTB0102JKZ | NXP Semiconductors | NTB0102JK | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTB0102JKZ | NXP USA Inc. | Description: IC TRANSLTR BIDIRECTIONAL 8XSON Packaging: Tape & Reel (TR) Package / Case: 8-XFDFN Output Type: Tri-State Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TA) Data Rate: 100Mbps Supplier Device Package: 8-X2SON (1.35x1) Channel Type: Bidirectional Translator Type: Voltage Level Channels per Circuit: 2 Voltage - VCCA: 1.2 V ~ 3.6 V Voltage - VCCB: 1.65 V ~ 5.5 V Number of Circuits: 1 | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTB0104BQ | auf Bestellung 120000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
| NTB0104BQ,115 | NXP USA Inc. | Description: IC TRANSLATOR BIDIR 14DHVQFN Features: Auto-Direction Sensing Packaging: Tape & Reel (TR) Package / Case: 14-VFQFN Exposed Pad Output Type: Tri-State, Non-Inverted Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TA) Data Rate: 100Mbps Supplier Device Package: 14-DHVQFN (2.5x3) Channel Type: Bidirectional Translator Type: Voltage Level Channels per Circuit: 4 Voltage - VCCA: 1.2 V ~ 3.6 V Voltage - VCCB: 1.65 V ~ 5.5 V Part Status: Active Number of Circuits: 1 | auf Bestellung 18000 Stücke: Lieferzeit 10-14 Tag (e) |
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| NTB0104BQ,115 | NXP Semiconductors | Voltage Level Translator 4-CH Bidirectional 14-Pin DHVQFN EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTB0104BQ,115 | NXP USA Inc. | Description: IC TRANSLATOR BIDIR 14DHVQFN Packaging: Cut Tape (CT) Features: Auto-Direction Sensing Package / Case: 14-VFQFN Exposed Pad Output Type: Tri-State, Non-Inverted Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TA) Data Rate: 100Mbps Supplier Device Package: 14-DHVQFN (2.5x3) Channel Type: Bidirectional Translator Type: Voltage Level Channels per Circuit: 4 Voltage - VCCA: 1.2 V ~ 3.6 V Voltage - VCCB: 1.65 V ~ 5.5 V Part Status: Active Number of Circuits: 1 | auf Bestellung 23665 Stücke: Lieferzeit 10-14 Tag (e) |
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| NTB0104BQ,115 | NXP Semiconductors | Translation - Voltage Levels 4.2ns 5.5V 250mW OD Transceiver | auf Bestellung 63618 Stücke: Lieferzeit 10-14 Tag (e) |
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| NTB0104BQ,115 | NXP Semiconductors | Voltage Level Translator 4-CH Bidirectional 14-Pin DHVQFN EP T/R | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| NTB0104BQ,115 | NXP Semiconductors | Voltage Level Translator 4-CH Bidirectional 14-Pin DHVQFN EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTB0104BQ-Q100115 | NXP USA Inc. | Description: DUAL SUPPLY TRANSLATING TRANSCEI | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTB0104BQ-Q100X | NXP Semiconductors | Voltage Level Translator 4-CH Bidirectional Automotive 14-Pin DHVQFN EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTB0104BQ-Q100X | NXP Semiconductors | Translation - Voltage Levels Dual supply translating transcvr | auf Bestellung 5551 Stücke: Lieferzeit 10-14 Tag (e) |
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| NTB0104BQ-Q100X | NXP Semiconductors | Voltage Level Translator 4-CH Bidirectional Automotive 14-Pin DHVQFN EP T/R | auf Bestellung 40 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| NTB0104BQ-Q100X | NXP USA Inc. | Description: IC TRANSLATOR BIDIR 14DHVQFN Features: Auto-Direction Sensing Packaging: Cut Tape (CT) Package / Case: 14-VFQFN Exposed Pad Output Type: Tri-State, Non-Inverted Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TA) Data Rate: 100Mbps Supplier Device Package: 14-DHVQFN (2.5x3) Channel Type: Bidirectional Translator Type: Voltage Level Channels per Circuit: 4 Voltage - VCCA: 1.2 V ~ 3.6 V Voltage - VCCB: 1.65 V ~ 5.5 V Grade: Automotive Part Status: Active Number of Circuits: 1 Qualification: AEC-Q100 | auf Bestellung 8915 Stücke: Lieferzeit 10-14 Tag (e) |
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| NTB0104BQ-Q100X | NXP Semiconductors | Voltage Level Translator 4-CH Bidirectional Automotive 14-Pin DHVQFN EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTB0104BQ-Q100X | NXP USA Inc. | Description: IC TRANSLATOR BIDIR 14DHVQFN Features: Auto-Direction Sensing Packaging: Tape & Reel (TR) Package / Case: 14-VFQFN Exposed Pad Output Type: Tri-State, Non-Inverted Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TA) Data Rate: 100Mbps Supplier Device Package: 14-DHVQFN (2.5x3) Channel Type: Bidirectional Translator Type: Voltage Level Channels per Circuit: 4 Voltage - VCCA: 1.2 V ~ 3.6 V Voltage - VCCB: 1.65 V ~ 5.5 V Grade: Automotive Part Status: Active Number of Circuits: 1 Qualification: AEC-Q100 | auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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| NTB0104GU12 | auf Bestellung 120000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
| NTB0104GU12,115 | NXP USA Inc. | Description: IC TRANSLTR BIDIRECTIONAL 12XQFN Packaging: Tape & Reel (TR) Features: Auto-Direction Sensing Package / Case: 12-XFQFN Output Type: Tri-State, Non-Inverted Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TA) Data Rate: 100Mbps Supplier Device Package: 12-XQFN (2x1.7) Channel Type: Bidirectional Translator Type: Voltage Level Channels per Circuit: 4 Voltage - VCCA: 1.2 V ~ 3.6 V Voltage - VCCB: 1.65 V ~ 5.5 V Part Status: Active Number of Circuits: 1 | auf Bestellung 20000 Stücke: Lieferzeit 10-14 Tag (e) |
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| NTB0104GU12,115 | NXP Semiconductors | Voltage Level Translator 4-CH Bidirectional 12-Pin XQFN T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTB0104GU12,115 | NXP | Description: NXP - NTB0104GU12,115 - Transceiver, 1.2V bis 3.6V, XQFN-12 tariffCode: 85423990 Logik-IC-Sockelnummer: - rohsCompliant: YES Logik-IC-Familie: NT Bauform - Logikbaustein: XQFN hazardous: false rohsPhthalatesCompliant: YES MSL: MSL 1 - unbegrenzt usEccn: EAR99 Betriebstemperatur, min.: -40°C Versorgungsspannung, min.: 1.2V Logikfamilie / Sockelnummer: - euEccn: NLR Logikbaustein: Transceiver, umsetzend Qualifizierungsstandard der Automobilindustrie: - Anzahl der Pins: 12Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Versorgungsspannung, max.: 3.6V Betriebstemperatur, max.: 125°C SVHC: No SVHC (17-Jan-2023) | auf Bestellung 10433 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| NTB0104GU12,115 | NXP USA Inc. | Description: IC TRANSLTR BIDIRECTIONAL 12XQFN Packaging: Cut Tape (CT) Features: Auto-Direction Sensing Package / Case: 12-XFQFN Output Type: Tri-State, Non-Inverted Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TA) Data Rate: 100Mbps Supplier Device Package: 12-XQFN (2x1.7) Channel Type: Bidirectional Translator Type: Voltage Level Channels per Circuit: 4 Voltage - VCCA: 1.2 V ~ 3.6 V Voltage - VCCB: 1.65 V ~ 5.5 V Part Status: Active Number of Circuits: 1 | auf Bestellung 22026 Stücke: Lieferzeit 10-14 Tag (e) |
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| NTB0104GU12,115 | NXP Semiconductors | Translation - Voltage Levels DUAL SUPP 4.8ns 3.6V | auf Bestellung 28707 Stücke: Lieferzeit 10-14 Tag (e) |
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| NTB0104GU12,115 | NXP Semiconductors | Voltage Level Translator 4-CH Bidirectional 12-Pin XQFN T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTB0104GU12,115 | NXP Semiconductors | Voltage Level Translator 4-CH Bidirectional 12-Pin XQFN T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTB0104GU12,115 | NXP | Description: NXP - NTB0104GU12,115 - Transceiver, 1.2V bis 3.6V, XQFN-12 tariffCode: 85423990 Logik-IC-Sockelnummer: - rohsCompliant: YES Logik-IC-Familie: NT Bauform - Logikbaustein: XQFN hazardous: false rohsPhthalatesCompliant: YES MSL: MSL 1 - unbegrenzt usEccn: EAR99 Betriebstemperatur, min.: -40°C Versorgungsspannung, min.: 1.2V Logikfamilie / Sockelnummer: - euEccn: NLR Logikbaustein: Transceiver, umsetzend Qualifizierungsstandard der Automobilindustrie: - Anzahl der Pins: 12Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Versorgungsspannung, max.: 3.6V Betriebstemperatur, max.: 125°C SVHC: No SVHC (17-Jan-2023) | auf Bestellung 10433 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| NTB0104UK | NXP USA Inc. | Description: DUAL SUPPLY TRANSLATING TRANSCEI | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTB0104UK,012 | NXP Semiconductors | Voltage Level Translator 4-CH Bidirectional 12-Pin WLCSP T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTB0104UK,012 | NXP | Description: NXP - NTB0104UK,012 - Pegelumsetzer, Transceiver, 4 Eingänge, 5.9ns, 1.65V bis 5.5V, WLCSP-12 Bauform - Logikbaustein: WLCSP Ausgangsstrom: - MSL: MSL 1 - unbegrenzt Betriebstemperatur, min.: -40 Versorgungsspannung, min.: 1.65 Logiktyp: Umsetzender Transceiver Ausbreitungsverzögerung: 5.9 Anzahl der Pins: 12 Produktpalette: - Versorgungsspannung, max.: 5.5 Anzahl der Eingänge: 4 Betriebstemperatur, max.: 125 SVHC: No SVHC (17-Jan-2022) | auf Bestellung 3266 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| NTB0104UK,012 | NXP USA Inc. | Description: IC TRANSLATOR BIDIR 12WLCSP Packaging: Cut Tape (CT) Features: Auto-Direction Sensing Package / Case: 12-UFBGA, WLCSP Output Type: Tri-State, Non-Inverted Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TA) Data Rate: 100Mbps Supplier Device Package: 12-UFBGA, WLCSP Channel Type: Bidirectional Translator Type: Voltage Level Channels per Circuit: 4 Voltage - VCCA: 1.2 V ~ 3.6 V Voltage - VCCB: 1.65 V ~ 5.5 V Number of Circuits: 1 | auf Bestellung 16148 Stücke: Lieferzeit 10-14 Tag (e) |
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| NTB0104UK,012 | NXP Semiconductors | Translation - Voltage Levels Dual supply translating transceiver; auto direction sensing; 3-state | auf Bestellung 6616 Stücke: Lieferzeit 10-14 Tag (e) |
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| NTB0104UK,012 | NXP Semiconductors | Voltage Level Translator 4-CH Bidirectional 12-Pin WLCSP T/R | auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) |
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| NTB0104UK,012 | NXP Semiconductors | Voltage Level Translator 4-CH Bidirectional 12-Pin WLCSP T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTB0104UK,012 | NXP USA Inc. | Description: IC TRANSLATOR BIDIR 12WLCSP Features: Auto-Direction Sensing Packaging: Tape & Reel (TR) Package / Case: 12-UFBGA, WLCSP Output Type: Tri-State, Non-Inverted Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TA) Data Rate: 100Mbps Supplier Device Package: 12-UFBGA, WLCSP Channel Type: Bidirectional Translator Type: Voltage Level Channels per Circuit: 4 Voltage - VCCA: 1.2 V ~ 3.6 V Voltage - VCCB: 1.65 V ~ 5.5 V Number of Circuits: 1 | auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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| NTB0104UK,023 | NXP Semiconductors | Voltage Level Translator 12-Pin WLCSP | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTB0104UK-Q100Z | NXP Semiconductors | Translation - Voltage Levels Dual supply translating transceiver; auto direction sensing; 3-state | auf Bestellung 2231 Stücke: Lieferzeit 10-14 Tag (e) |
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| NTB0104UK-Q100Z | NXP USA Inc. | Description: IC TRANSLATOR BIDIR 12WLCSP Features: Auto-Direction Sensing Packaging: Cut Tape (CT) Package / Case: 12-UFBGA, WLCSP Output Type: Tri-State, Non-Inverted Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TA) Data Rate: 100Mbps Supplier Device Package: 12-UFBGA, WLCSP Channel Type: Bidirectional Translator Type: Voltage Level Channels per Circuit: 4 Voltage - VCCA: 1.2 V ~ 3.6 V Voltage - VCCB: 1.65 V ~ 5.5 V Grade: Automotive Part Status: Last Time Buy Number of Circuits: 1 Qualification: AEC-Q100 | auf Bestellung 880 Stücke: Lieferzeit 10-14 Tag (e) |
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| NTB0104UK-Q100Z | NXP Semiconductors | Voltage Level Translator 4-CH Bidirectional Automotive 12-Pin WLCSP | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTB0104UK-Q100Z | NXP Semiconductors | Voltage Level Translator 4-CH Bidirectional Automotive 12-Pin WLCSP | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTB0104UK-Q100Z | NXP USA Inc. | Description: IC TRANSLATOR BIDIR 12WLCSP Packaging: Tape & Reel (TR) Features: Auto-Direction Sensing Package / Case: 12-UFBGA, WLCSP Output Type: Tri-State, Non-Inverted Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TA) Data Rate: 100Mbps Supplier Device Package: 12-UFBGA, WLCSP Channel Type: Bidirectional Translator Type: Voltage Level Channels per Circuit: 4 Voltage - VCCA: 1.2 V ~ 3.6 V Voltage - VCCB: 1.65 V ~ 5.5 V Part Status: Last Time Buy Number of Circuits: 1 Grade: Automotive Qualification: AEC-Q100 | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTB011N15MC | onsemi | Description: NTB011N15MC Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta), 75.4A (Tc) Rds On (Max) @ Id, Vgs: 10.9mOhm @ 41A, 10V Power Dissipation (Max): 3.75W (Ta), 136.4W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 223µA Supplier Device Package: D²PAK-3 (TO-263-3) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2810 pF @ 75 V | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTB011N15MC | onsemi | MOSFET PTNG 150V N-FET D2PAK | auf Bestellung 153 Stücke: Lieferzeit 10-14 Tag (e) |
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| NTB011N15MC | onsemi | Description: NTB011N15MC Packaging: Cut Tape (CT) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta), 75.4A (Tc) Rds On (Max) @ Id, Vgs: 10.9mOhm @ 41A, 10V Power Dissipation (Max): 3.75W (Ta), 136.4W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 223µA Supplier Device Package: D²PAK-3 (TO-263-3) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2810 pF @ 75 V | auf Bestellung 552 Stücke: Lieferzeit 10-14 Tag (e) |
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| NTB02-010MV | YAGEO | Description: YAGEO - NTB02-010MV - Thermistor, ICL, NTC, 10 Ohm, Produktreihe NT, 5mm, 2A tariffCode: 85334010 productTraceability: Yes-Date/Lot Code rohsCompliant: YES Zulassungen: TÜV, UL Maximaler eingeschwungener Strom bei 25°C: 2A euEccn: NLR Maximale Nennenergie bei 25°C: - hazardous: false Temperaturabhängiger Widerstand bei 25°C: 10ohm rohsPhthalatesCompliant: YES Scheibengröße: 5mm usEccn: EAR99 Produktpalette: NT Series SVHC: No SVHC (14-Jun-2023) | auf Bestellung 6230 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| NTB082N65S3F | onsemi | MOSFET SUPERFET3 650V D2PAK PKG | auf Bestellung 6400 Stücke: Lieferzeit 1270-1274 Tag (e) |
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| NTB082N65S3F | ON Semiconductor | Trans MOSFET N-CH 650V 40A 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTB082N65S3F | onsemi | Description: MOSFET N-CH 650V 40A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 82mOhm @ 20A, 10V Power Dissipation (Max): 313W (Tc) Vgs(th) (Max) @ Id: 5V @ 4mA Supplier Device Package: D²PAK (TO-263) Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3410 pF @ 400 V | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTB082N65S3F | onsemi | Description: MOSFET N-CH 650V 40A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 82mOhm @ 20A, 10V Power Dissipation (Max): 313W (Tc) Vgs(th) (Max) @ Id: 5V @ 4mA Supplier Device Package: D²PAK (TO-263) Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3410 pF @ 400 V | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTB095N65S3HF | onsemi | Description: MOSFET N-CH 650V 36A D2PAK-3 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Rds On (Max) @ Id, Vgs: 95mOhm @ 18A, 10V Power Dissipation (Max): 272W (Tc) Vgs(th) (Max) @ Id: 5V @ 860µA Supplier Device Package: TO-263 (D2Pak) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2930 pF @ 400 V | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTB095N65S3HF | onsemi | Description: MOSFET N-CH 650V 36A D2PAK-3 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Rds On (Max) @ Id, Vgs: 95mOhm @ 18A, 10V Power Dissipation (Max): 272W (Tc) Vgs(th) (Max) @ Id: 5V @ 860µA Supplier Device Package: TO-263 (D2Pak) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2930 pF @ 400 V | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTB095N65S3HF | onsemi | MOSFET SUPERFET3 650V FRFET 95MO | auf Bestellung 800 Stücke: Lieferzeit 139-143 Tag (e) |
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| NTB095N65S3HF | ON Semiconductor | Trans MOSFET N-CH 650V 36A 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTB1024 | Boca Bearing Company | Description: 10X24X2MM THRUST BEARING Packaging: Bulk Type: Thrust Bearing Outer Diameter: 0.945" (24.00mm) Inner Diameter: 0.394" (10.00mm) Part Status: Active | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTB10N40 | Motorola | Description: N-CHANNEL POWER MOSFET Packaging: Bulk Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 500mOhm @ 5A, 10V Power Dissipation (Max): 142W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D2PAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 400 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2020 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTB10N40E | auf Bestellung 5750 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
| NTB10N60 | onsemi | Description: N-CHANNEL POWER MOSFET Packaging: Bulk Part Status: Active | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTB110N65S3HF | ON Semiconductor | auf Bestellung 2094 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||||
| NTB110N65S3HF | onsemi | Description: MOSFET N-CH 650V 30A D2PAK-3 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 110mOhm @ 15A, 10V Power Dissipation (Max): 240W (Tc) Vgs(th) (Max) @ Id: 5V @ 740µA Supplier Device Package: TO-263 (D2Pak) Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2635 pF @ 400 V | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTB110N65S3HF | onsemi | MOSFET Power MOSFET, N-Channel, SUPERFET III, FRFET, 650 V, 30 A, 110 mohm, D2PAK | auf Bestellung 800 Stücke: Lieferzeit 108-112 Tag (e) |
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| NTB110N65S3HF | ON Semiconductor | Trans MOSFET N-CH 650V 30A 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTB110N65S3HF | onsemi | Description: MOSFET N-CH 650V 30A D2PAK-3 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 110mOhm @ 15A, 10V Power Dissipation (Max): 240W (Tc) Vgs(th) (Max) @ Id: 5V @ 740µA Supplier Device Package: TO-263 (D2Pak) Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2635 pF @ 400 V | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTB110N65S3HF | onsemi | Description: MOSFET N-CH 650V 30A D2PAK-3 Packaging: Bulk Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 110mOhm @ 15A, 10V Power Dissipation (Max): 240W (Tc) Vgs(th) (Max) @ Id: 5V @ 740µA Supplier Device Package: TO-263 (D2Pak) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2635 pF @ 400 V | auf Bestellung 576 Stücke: Lieferzeit 10-14 Tag (e) |
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| NTB125N02R | ON | SOT-263 | auf Bestellung 25000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| NTB125N02R | onsemi | Description: MOSFET N-CH 24V 95A/120.5A D2PAK Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 95A (Ta), 120.5A (Tc) Rds On (Max) @ Id, Vgs: 4.6mOhm @ 20A, 10V Power Dissipation (Max): 1.98W (Ta), 113.6W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: D2PAK Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 24 V Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 3440 pF @ 20 V | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTB125N02R | ON | 07+ SOT-263 | auf Bestellung 25000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| NTB125N02R | ON | TO-263/D2-PAK | auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| NTB125N02RG | auf Bestellung 36000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
| NTB125N02RG | onsemi | Description: MOSFET N-CH 24V 95A/120.5A D2PAK Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 95A (Ta), 120.5A (Tc) Rds On (Max) @ Id, Vgs: 4.6mOhm @ 20A, 10V Power Dissipation (Max): 1.98W (Ta), 113.6W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: D2PAK Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 24 V Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 3440 pF @ 20 V | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTB125N02RT4 | ON | TO-263/D2-PAK | auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| NTB125N02RT4 | onsemi | Description: MOSFET N-CH 24V 125A D2PAK Packaging: Cut Tape (CT) | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTB125N02RT4G | onsemi | Description: MOSFET N-CH 24V 95A/120.5A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 95A (Ta), 120.5A (Tc) Rds On (Max) @ Id, Vgs: 4.6mOhm @ 20A, 10V Power Dissipation (Max): 1.98W (Ta), 113.6W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: D2PAK Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 24 V Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 3440 pF @ 20 V | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTB125N02RT4G | auf Bestellung 4099 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
| NTB125N2 | auf Bestellung 5750 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
| NTB12N50 | ON Semiconductor | Trans MOSFET N-CH 500V 12A 3-Pin(2+Tab) D2PAK Rail | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTB12N50 | Motorola | Description: N-CHANNEL POWER MOSFET Packaging: Bulk Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 500mOhm @ 6A, 10V Power Dissipation (Max): 202W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D2PAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2520 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTB12N50 | auf Bestellung 8646 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
| NTB12N50T4 | onsemi | Description: N-CHANNEL POWER MOSFET Packaging: Bulk Part Status: Active | auf Bestellung 3989 Stücke: Lieferzeit 10-14 Tag (e) |
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| NTB12N50T4 | auf Bestellung 5589 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
| NTB13N10 | ON | SOT-263 | auf Bestellung 20000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| NTB13N10 | onsemi | Description: MOSFET N-CH 100V 13A D2PAK Packaging: Tube Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Ta) Rds On (Max) @ Id, Vgs: 165mOhm @ 6.5A, 10V Power Dissipation (Max): 64.7W (Ta) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D2PAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTB13N10 | ON | 07+ SOT-263 | auf Bestellung 20000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| NTB13N10G | auf Bestellung 36000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
| NTB13N10G | onsemi | Description: MOSFET N-CH 100V 13A D2PAK Packaging: Tube Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Ta) Rds On (Max) @ Id, Vgs: 165mOhm @ 6.5A, 10V Power Dissipation (Max): 64.7W (Ta) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D2PAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTB13N10T4 | auf Bestellung 36000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
| NTB13N10T4G | onsemi | Description: MOSFET N-CH 100V 13A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Ta) Rds On (Max) @ Id, Vgs: 165mOhm @ 6.5A, 10V Power Dissipation (Max): 64.7W (Ta) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D2PAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTB13N10T4G | auf Bestellung 4099 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
| NTB150N65S3HF | onsemi | MOSFET Pwr MOSFET N-Chn SUPERFET III | auf Bestellung 770 Stücke: Lieferzeit 10-14 Tag (e) |
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| NTB150N65S3HF | onsemi | Description: MOSFET N-CH 650V 24A D2PAK-3 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Rds On (Max) @ Id, Vgs: 150mOhm @ 12A, 10V Power Dissipation (Max): 192W (Tc) Vgs(th) (Max) @ Id: 5V @ 540µA Supplier Device Package: TO-263 (D2Pak) Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1985 pF @ 400 V | auf Bestellung 800 Stücke: Lieferzeit 10-14 Tag (e) |
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| NTB150N65S3HF | onsemi | Description: MOSFET N-CH 650V 24A D2PAK-3 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Rds On (Max) @ Id, Vgs: 150mOhm @ 12A, 10V Power Dissipation (Max): 192W (Tc) Vgs(th) (Max) @ Id: 5V @ 540µA Supplier Device Package: TO-263 (D2Pak) Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1985 pF @ 400 V | auf Bestellung 800 Stücke: Lieferzeit 10-14 Tag (e) |
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| NTB150N65S3HF | ON Semiconductor | Trans MOSFET N-CH 650V 24A 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTB150N65S3HF | ON Semiconductor | auf Bestellung 600 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||||
| NTB1730 | Boca Bearing Company | Description: 17X30X2MM THRUST BEARING Packaging: Bulk Type: Thrust Bearing Outer Diameter: 1.181" (30.00mm) Inner Diameter: 0.669" (17.00mm) Part Status: Active | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTB18N06 | ON | SOT-263 | auf Bestellung 15000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| NTB18N06 | onsemi | Description: MOSFET N-CH 60V 15A D2PAK Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Rds On (Max) @ Id, Vgs: 90mOhm @ 7.5A, 10V Power Dissipation (Max): 48.4W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D2PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTB18N06 | ON | 07+ SOT-263 | auf Bestellung 15000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| NTB18N06 | onsemi | MOSFET 60V 15A N-Channel | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTB18N06G | onsemi | Description: MOSFET N-CH 60V 15A D2PAK Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Rds On (Max) @ Id, Vgs: 90mOhm @ 7.5A, 10V Power Dissipation (Max): 48.4W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D2PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTB18N06G | ONSEMI | Description: ONSEMI - NTB18N06G - NTB18N06G, SINGLE MOSFETS tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) | auf Bestellung 1600 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| NTB18N06G | auf Bestellung 4099 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
| NTB18N06L | ON | SOT-263 | auf Bestellung 25000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| NTB18N06L | onsemi | Description: MOSFET N-CH 60V 15A D2PAK Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Rds On (Max) @ Id, Vgs: 100mOhm @ 7.5A, 5V Power Dissipation (Max): 48.4W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: D2PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTB18N06L | ON | TO-263/D2-PAK | auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| NTB18N06L(N.TB) | auf Bestellung 194 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
| NTB18N06LG | auf Bestellung 5000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
| NTB18N06LG | onsemi | Description: MOSFET N-CH 60V 15A D2PAK Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Rds On (Max) @ Id, Vgs: 100mOhm @ 7.5A, 5V Power Dissipation (Max): 48.4W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: D2PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTB18N06LT4 | ON | TO-263/D2-PAK | auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| NTB18N06LT4 | onsemi | Description: MOSFET N-CH 60V 15A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Rds On (Max) @ Id, Vgs: 100mOhm @ 7.5A, 5V Power Dissipation (Max): 48.4W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: D2PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTB18N06LT4G | ON Semiconductor | Trans MOSFET N-CH 60V 15A 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTB18N06LT4G | ON | 0522+ | auf Bestellung 2627 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| NTB18N06LT4G | onsemi | Description: MOSFET N-CH 60V 15A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Rds On (Max) @ Id, Vgs: 100mOhm @ 7.5A, 5V Power Dissipation (Max): 48.4W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: D2PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTB18N06LT4G | ON Semiconductor | Trans MOSFET N-CH 60V 15A 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTB18N06LT4G | ON | TO-263/D2-PAK | auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| NTB18N06LT4G | onsemi | Description: MOSFET N-CH 60V 15A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Rds On (Max) @ Id, Vgs: 100mOhm @ 7.5A, 5V Power Dissipation (Max): 48.4W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: D2PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTB18N06T4 | auf Bestellung 26386 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
| NTB18N06T4 | onsemi | Description: MOSFET N-CH 60V 15A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Rds On (Max) @ Id, Vgs: 90mOhm @ 7.5A, 10V Power Dissipation (Max): 48.4W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D2PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTB18N06T4 | ONSEMI | Description: ONSEMI - NTB18N06T4 - NTB18N06T4, SINGLE MOSFETS tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) | auf Bestellung 15586 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| NTB18N06T4G | auf Bestellung 4099 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
| NTB18N06T4G | onsemi | Description: MOSFET N-CH 60V 15A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Rds On (Max) @ Id, Vgs: 90mOhm @ 7.5A, 10V Power Dissipation (Max): 48.4W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D2PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTB190N65S3HF | onsemi | MOSFET SUPERFET3 650V FRFET 190M | auf Bestellung 800 Stücke: Lieferzeit 108-112 Tag (e) |
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| NTB190N65S3HF | onsemi | Description: MOSFET N-CH 650V 20A D2PAK-3 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 10A, 10V Power Dissipation (Max): 162W (Tc) Vgs(th) (Max) @ Id: 5V @ 430µA Supplier Device Package: TO-263 (D2Pak) Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1610 pF @ 400 V | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTB190N65S3HF | ON Semiconductor | Trans MOSFET N-CH 650V 20A 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTB190N65S3HF | ON Semiconductor | auf Bestellung 639 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||||
| NTB190N65S3HF | onsemi | Description: MOSFET N-CH 650V 20A D2PAK-3 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 10A, 10V Power Dissipation (Max): 162W (Tc) Vgs(th) (Max) @ Id: 5V @ 430µA Supplier Device Package: TO-263 (D2Pak) Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1610 pF @ 400 V | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTB1N100 | auf Bestellung 30 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
| NTB22N06 | auf Bestellung 2729 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
| NTB22N06 | onsemi | Description: N-CHANNEL POWER MOSFET Packaging: Bulk | auf Bestellung 2729 Stücke: Lieferzeit 10-14 Tag (e) |
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| NTB22N06L | onsemi | Description: N-CHANNEL POWER MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTB22N06LG | auf Bestellung 5000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
| NTB22N06LT4 | auf Bestellung 1600 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
| NTB22N06LT4 | onsemi | Description: MOSFET N-CH 60V 22A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Ta) Rds On (Max) @ Id, Vgs: 65mOhm @ 11A, 5V Power Dissipation (Max): 60W (Tj) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: D2PAK Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 690 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTB22N06T4 | onsemi | Description: MOSFET N-CH 60V 22A D2PAK Packaging: Bulk Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Ta) Rds On (Max) @ Id, Vgs: 60mOhm @ 11A, 10V Power Dissipation (Max): 60W (Tj) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D2PAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V | auf Bestellung 4800 Stücke: Lieferzeit 10-14 Tag (e) |
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| NTB22N06T4 | auf Bestellung 4800 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
| NTB22N06T4 | onsemi | Description: MOSFET N-CH 60V 22A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Ta) Rds On (Max) @ Id, Vgs: 60mOhm @ 11A, 10V Power Dissipation (Max): 60W (Tj) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D2PAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTB23N03R | ON | 07+ SOT-263 | auf Bestellung 10000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| NTB23N03R | ON | TO-263/D2-PAK | auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| NTB23N03R | onsemi | Description: MOSFET N-CH 25V 23A D2PAK | auf Bestellung 8250 Stücke: Lieferzeit 10-14 Tag (e) |
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| NTB23N03R | ONSEMI | Description: ONSEMI - NTB23N03R - 6A, 25V, 0.06OHM, N-CHANNEL POWER MOSFET tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) | auf Bestellung 8250 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| NTB23N03R | ON | SOT-263 | auf Bestellung 10000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| NTB23N03R | onsemi | Description: MOSFET N-CH 25V 23A D2PAK | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTB23N03RG | ON | 07+ TO-263/D2-PAK | auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| NTB23N03RG | onsemi | Description: MOSFET N-CH 25V 23A D2PAK | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTB23N03RG | ONSEMI | Description: ONSEMI - NTB23N03RG - NTB23N03RG, SINGLE MOSFETS tariffCode: 85412900 productTraceability: Yes-Date/Lot Code rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) | auf Bestellung 12350 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| NTB23N03RG | ON | TO-263/D2-PAK | auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| NTB23N03RG | onsemi | Description: MOSFET N-CH 25V 23A D2PAK | auf Bestellung 12350 Stücke: Lieferzeit 10-14 Tag (e) |
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| NTB23N03RT4 | ON | 07+ TO-263/D2-PAK | auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| NTB23N03RT4 | onsemi | Description: MOSFET N-CH 25V 23A D2PAK | auf Bestellung 174372 Stücke: Lieferzeit 10-14 Tag (e) |
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| NTB23N03RT4 | ON | TO-263/D2-PAK | auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| NTB23N03RT4G | onsemi | Description: MOSFET N-CH 25V 23A D2PAK | auf Bestellung 11894 Stücke: Lieferzeit 10-14 Tag (e) |
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| NTB23N03RT4G | ON | TO-263/D2-PAK | auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| NTB23N03RT4G | onsemi | Description: MOSFET N-CH 25V 23A D2PAK | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTB23N03RT4G | onsemi | Description: MOSFET N-CH 25V 23A D2PAK | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTB25P06 | ON | TO-263/D2-PAK | auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| NTB25P06 | ON | SOT-263 | auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| NTB25P06 | onsemi | Description: MOSFET P-CH 60V 27.5A D2PAK Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 27.5A (Ta) Rds On (Max) @ Id, Vgs: 82mOhm @ 25A, 10V Power Dissipation (Max): 120W (Tj) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D2PAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±15V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTB25P06 | onsemi | MOSFET -60V -27.5A Pchannel | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTB25P06 | ON | 07+ SOT-263 | auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| NTB25P06G | ON Semiconductor | Trans MOSFET P-CH 60V 27.5A 3-Pin(2+Tab) D2PAK Rail | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTB25P06G | onsemi | Description: MOSFET P-CH 60V 27.5A D2PAK Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 27.5A (Ta) Rds On (Max) @ Id, Vgs: 82mOhm @ 25A, 10V Power Dissipation (Max): 120W (Tj) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D2PAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±15V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTB25P06G | ON | TO-263/D2-PAK | auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| NTB25P06G | ON | 08+ | auf Bestellung 392 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| NTB25P06T4 | onsemi | Description: MOSFET P-CH 60V 27.5A D2PAK | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTB25P06T4G | onsemi | Description: MOSFET P-CH 60V 27.5A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 27.5A (Ta) Rds On (Max) @ Id, Vgs: 82mOhm @ 25A, 10V Power Dissipation (Max): 120W (Tj) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D2PAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±15V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 25 V | auf Bestellung 193 Stücke: Lieferzeit 10-14 Tag (e) |
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| NTB25P06T4G | ON Semiconductor | Trans MOSFET P-CH 60V 27.5A 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTB25P06T4G | onsemi | MOSFET -60V -27.5A Pchannel | auf Bestellung 10375 Stücke: Lieferzeit 304-308 Tag (e) |
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| NTB25P06T4G | onsemi | Description: MOSFET P-CH 60V 27.5A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 27.5A (Ta) Rds On (Max) @ Id, Vgs: 82mOhm @ 25A, 10V Power Dissipation (Max): 120W (Tj) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D2PAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±15V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 25 V | auf Bestellung 120 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||||
| NTB25P06T4G | ONSEMI | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -27.5A; 120W; D2PAK Mounting: SMD On-state resistance: 75mΩ Type of transistor: P-MOSFET Power dissipation: 120W Polarisation: unipolar Kind of package: reel; tape Case: D2PAK Kind of channel: enhanced Gate-source voltage: ±15V Drain-source voltage: -60V Drain current: -27.5A | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTB25P06T4G | ON Semiconductor | Trans MOSFET P-CH 60V 27.5A 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTB25P06T4G | ON Semiconductor | Trans MOSFET P-CH 60V 27.5A 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTB25P06T4G | ONSEMI | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -27.5A; 120W; D2PAK Mounting: SMD On-state resistance: 75mΩ Type of transistor: P-MOSFET Power dissipation: 120W Polarisation: unipolar Kind of package: reel; tape Case: D2PAK Kind of channel: enhanced Gate-source voltage: ±15V Drain-source voltage: -60V Drain current: -27.5A Anzahl je Verpackung: 800 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTB27N06 | ON | TO-263/D2-PAK | auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| NTB27N06 | ON | 07+ TO-263/D2-PAK | auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| NTB27N06LG | auf Bestellung 5000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
| NTB27N06LT4 | onsemi | Description: MOSFET N-CH 60V 27A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 27A (Ta) Rds On (Max) @ Id, Vgs: 48mOhm @ 13.5A, 5V Power Dissipation (Max): 88.2W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: D²PAK Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): ±15V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 990 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTB27N06LT4 | onsemi | Description: MOSFET N-CH 60V 27A D2PAK Packaging: Bulk Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 27A (Ta) Rds On (Max) @ Id, Vgs: 48mOhm @ 13.5A, 5V Power Dissipation (Max): 88.2W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: D²PAK Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): ±15V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 990 pF @ 25 V | auf Bestellung 20028 Stücke: Lieferzeit 10-14 Tag (e) |
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| NTB27N06T4 | ON | 07+ TO-263/D2-PAK | auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| NTB27N06T4 | ON | TO-263/D2-PAK | auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| NTB27N06T4G | auf Bestellung 35000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
| NTB3055V | auf Bestellung 400 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
| NTB30N06 | ON | SOT-263 | auf Bestellung 15000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| NTB30N06 | ON | 07+ SOT-263 | auf Bestellung 15000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| NTB30N06 | onsemi | Description: N-CHANNEL POWER MOSFET Packaging: Bulk Part Status: Active | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTB30N06G | onsemi | Description: MOSFET N-CH 60V 27A D2PAK Packaging: Tube Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 27A (Ta) Rds On (Max) @ Id, Vgs: 42mOhm @ 15A, 10V Power Dissipation (Max): 88.2W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D²PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTB30N06G | auf Bestellung 5000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
| NTB30N06L | onsemi | Description: MOSFET N-CH 60V 30A D2PAK Packaging: Tube Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Ta) Rds On (Max) @ Id, Vgs: 46mOhm @ 15A, 5V Power Dissipation (Max): 88.2W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: D²PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): ±15V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTB30N06L | ON | SOT-263 | auf Bestellung 15000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| NTB30N06L | ON | 07+ SOT-263 | auf Bestellung 15000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| NTB30N06L | ON | TO-263/D2-PAK | auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| NTB30N06LG | auf Bestellung 5000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
| NTB30N06LG | onsemi | Description: MOSFET N-CH 60V 30A D2PAK Packaging: Tube Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Ta) Rds On (Max) @ Id, Vgs: 46mOhm @ 15A, 5V Power Dissipation (Max): 88.2W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: D²PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): ±15V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTB30N06LT4 | onsemi | Description: MOSFET N-CH 60V 30A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Ta) Rds On (Max) @ Id, Vgs: 46mOhm @ 15A, 5V Power Dissipation (Max): 88.2W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: D²PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): ±15V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTB30N06LT4 | ON | TO-263/D2-PAK | auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| NTB30N06LT4G | ON Semiconductor | Trans MOSFET N-CH 60V 30A 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTB30N06LT4G | auf Bestellung 4099 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
| NTB30N06LT4G | onsemi | Description: MOSFET N-CH 60V 30A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Ta) Rds On (Max) @ Id, Vgs: 46mOhm @ 15A, 5V Power Dissipation (Max): 88.2W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: D²PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): ±15V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTB30N06T4 | onsemi | Description: MOSFET N-CH 60V 27A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 27A (Ta) Rds On (Max) @ Id, Vgs: 42mOhm @ 15A, 10V Power Dissipation (Max): 88.2W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D²PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTB30N06T4G | auf Bestellung 4099 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
| NTB30N06T4G | onsemi | Description: MOSFET N-CH 60V 27A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 27A (Ta) Rds On (Max) @ Id, Vgs: 42mOhm @ 15A, 10V Power Dissipation (Max): 88.2W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D²PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTB30N20 | ON | SOT-263 | auf Bestellung 20000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| NTB30N20 | onsemi | Description: MOSFET N-CH 200V 30A D2PAK Packaging: Tube Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Ta) Rds On (Max) @ Id, Vgs: 81mOhm @ 15A, 10V Power Dissipation (Max): 2W (Ta), 214W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D²PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2335 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTB30N20 | ON | 07+ SOT-263 | auf Bestellung 20000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| NTB30N20 | ON | TO-263/D2-PAK | auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| NTB30N20G | onsemi | Description: MOSFET N-CH 200V 30A D2PAK Packaging: Tube Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Ta) Rds On (Max) @ Id, Vgs: 81mOhm @ 15A, 10V Power Dissipation (Max): 2W (Ta), 214W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D²PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2335 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTB30N20G | ON Semiconductor | Trans MOSFET N-CH 200V 30A 3-Pin(2+Tab) D2PAK Tube | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTB30N20T4 | ON | TO-263/D2-PAK | auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| NTB30N20T4G | ON | 0848 | auf Bestellung 3 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| NTB30N20T4G | ON Semiconductor | Trans MOSFET N-CH 200V 30A 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTB30N20T4G | onsemi | Description: MOSFET N-CH 200V 30A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Ta) Rds On (Max) @ Id, Vgs: 81mOhm @ 15A, 10V Power Dissipation (Max): 2W (Ta), 214W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D²PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2335 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTB30N20T4G | ON Semiconductor | Trans MOSFET N-CH 200V 30A 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTB30N20T4G | onsemi | Description: MOSFET N-CH 200V 30A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Ta) Rds On (Max) @ Id, Vgs: 81mOhm @ 15A, 10V Power Dissipation (Max): 2W (Ta), 214W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D²PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2335 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTB35N15 | ON | SOT-263 | auf Bestellung 20000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| NTB35N15 | ON | 07+ SOT-263 | auf Bestellung 20000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| NTB35N15 | ON | TO-263/D2-PAK | auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| NTB35N15G | ON | auf Bestellung 2100 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||||
| NTB35N15G | ON Semiconductor | Description: MOSFET N-CH 150V 37A D2PAK | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTB35N15T4 | ON Semiconductor | Description: MOSFET N-CH 150V 37A D2PAK | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTB35N15T4 | ON | TO-263/D2-PAK | auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| NTB35N15T4 | ON | 07+ TO-263/D2-PAK | auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| NTB35N15T4G | ON Semiconductor | MOSFET 150V 37A N-Channel | auf Bestellung 1230 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||||
| NTB35N15T4G | ON Semiconductor | Description: MOSFET N-CH 150V 37A D2PAK | auf Bestellung 800 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||||
| NTB35N15T4G | ON Semiconductor | Description: MOSFET N-CH 150V 37A D2PAK | auf Bestellung 5 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||||
| NTB36N06 | auf Bestellung 45 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
| NTB3N120E | ON | TO-263 | auf Bestellung 10000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| NTB4302 | ON Semiconductor | Description: MOSFET N-CH 30V 74A D2PAK | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTB4302 | ON | 07+ SOT-263 | auf Bestellung 20000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| NTB4302 | ON | TO-263/D2-PAK | auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| NTB4302 | ON | SOT-263 | auf Bestellung 20000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| NTB4302G | ON Semiconductor | Description: MOSFET N-CH 30V 74A D2PAK | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTB4302T4 | ON | 07+ TO-263/D2-PAK | auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| NTB4302T4 | ON Semiconductor | Description: MOSFET N-CH 30V 74A D2PAK | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTB4302T4 | ON | TO-263/D2-PAK | auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| NTB4302T4G | ON Semiconductor | Description: MOSFET N-CH 30V 74A D2PAK | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTB4302T4G | auf Bestellung 35000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
| NTB45N06 | ON | TO-263/D2-PAK | auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| NTB45N06 | ON | SOT-263 | auf Bestellung 10000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| NTB45N06 | Rochester Electronics, LLC | Description: N-CHANNEL POWER MOSFET | auf Bestellung 154 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||||
| NTB45N06 | ON | 07+ SOT-263 | auf Bestellung 10000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| NTB45N06G | onsemi | Description: MOSFET N-CH 60V 45A D2PAK Packaging: Tube Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 45A (Ta) Rds On (Max) @ Id, Vgs: 26mOhm @ 22.5A, 10V Power Dissipation (Max): 2.4W (Ta), 125W (Tj) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D²PAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1725 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTB45N06G | ON | D2PAK | auf Bestellung 10000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| NTB45N06G | ON Semiconductor | Trans MOSFET N-CH 60V 45A 3-Pin(2+Tab) D2PAK Tube | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTB45N06G | ON | auf Bestellung 5000 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||||
| NTB45N06L | ON | TO-263/D2-PAK | auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| NTB45N06L | ON | SOT-263 | auf Bestellung 10000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| NTB45N06L | Rochester Electronics, LLC | Description: N-CHANNEL POWER MOSFET | auf Bestellung 25 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||||
| NTB45N06L | ON | 07+ SOT-263 | auf Bestellung 10000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| NTB45N06LG | ON | 07+; | auf Bestellung 200 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| NTB45N06LG | onsemi | Description: MOSFET N-CH 60V 45A D2PAK Packaging: Tube Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 45A (Ta) Rds On (Max) @ Id, Vgs: 28mOhm @ 22.5A, 5V Power Dissipation (Max): 2.4W (Ta), 125W (Tj) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: D²PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): ±15V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTB45N06LG | ON | 07+ TO-263/D2-PAK | auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| NTB45N06LG | ON | TO-263/D2-PAK | auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| NTB45N06LT4 | ON | TO-263/D2-PAK | auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| NTB45N06LT4 | onsemi | Description: MOSFET N-CH 60V 45A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 45A (Ta) Rds On (Max) @ Id, Vgs: 28mOhm @ 22.5A, 5V Power Dissipation (Max): 2.4W (Ta), 125W (Tj) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: D²PAK Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): ±15V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTB45N06LT4 | ON | 07+ TO-263/D2-PAK | auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| NTB45N06LT4G | ON Semiconductor | Trans MOSFET N-CH 60V 45A 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTB45N06LT4G | onsemi | Description: MOSFET N-CH 60V 45A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 45A (Ta) Rds On (Max) @ Id, Vgs: 28mOhm @ 22.5A, 5V Power Dissipation (Max): 2.4W (Ta), 125W (Tj) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: D2PAK Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): ±15V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTB45N06LT4G | ON Semiconductor | MOSFET 60V 45A N-Channel | auf Bestellung 120 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||||
| NTB45N06LT4G | onsemi | Description: MOSFET N-CH 60V 45A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 45A (Ta) Rds On (Max) @ Id, Vgs: 28mOhm @ 22.5A, 5V Power Dissipation (Max): 2.4W (Ta), 125W (Tj) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: D2PAK Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): ±15V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTB45N06T4 | onsemi | MOSFET 60V 45A N-Channel | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTB45N06T4 | ON | TO-263/D2-PAK | auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| NTB45N06T4 | ON | 07+ TO-263/D2-PAK | auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| NTB45N06T4 | Rochester Electronics, LLC | Description: N-CHANNEL POWER MOSFET | auf Bestellung 1600 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||||
| NTB45N06T4G | onsemi | Description: MOSFET N-CH 60V 45A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 45A (Ta) Rds On (Max) @ Id, Vgs: 26mOhm @ 22.5A, 10V Power Dissipation (Max): 2.4W (Ta), 125W (Tj) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D²PAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1725 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTB45N06T4G | ONSEMI | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 30A; 125W; D2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 30A Power dissipation: 125W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 26mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTB45N06T4G | onsemi | Description: MOSFET N-CH 60V 45A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 45A (Ta) Rds On (Max) @ Id, Vgs: 26mOhm @ 22.5A, 10V Power Dissipation (Max): 2.4W (Ta), 125W (Tj) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D²PAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1725 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTB45N06T4G | onsemi | MOSFET 60V 45A N-Channel | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTB45N06T4G | ON Semiconductor | Trans MOSFET N-CH 60V 45A 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTB4N40E | auf Bestellung 55 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
| NTB50N06EL | auf Bestellung 25 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
| NTB52N10 | ON | 07+ SOT-263 | auf Bestellung 20000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| NTB52N10 | ON | SOT-263 | auf Bestellung 20000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| NTB52N10G | auf Bestellung 41 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
| NTB52N10G | ON Semiconductor | Description: MOSFET N-CH 100V 52A D2PAK | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTB52N10T4G | ON Semiconductor | Trans MOSFET N-CH 100V 52A 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTB52N10T4G | ON Semiconductor | Description: MOSFET N-CH 100V 52A D2PAK | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTB52N10T4G | onsemi | MOSFET 100V 52A N-Channel | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTB52N10T4G | ON Semiconductor | Trans MOSFET N-CH 100V 52A 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTB52N10T4G | ON Semiconductor | Description: MOSFET N-CH 100V 52A D2PAK | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTB52N10T4G | ON | 08+ | auf Bestellung 786 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| NTB52N10T4G | ON Semiconductor | Description: MOSFET N-CH 100V 52A D2PAK | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTB5404NT4G | ON Semiconductor | Description: MOSFET N-CH 40V 167A D2PAK | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTB5404NT4G | auf Bestellung 900 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
| NTB5405NG | ON Semiconductor | Description: MOSFET N-CH 40V 116A D2PAK | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTB5405NT4G | onsemi | Description: MOSFET N-CH 40V 116A D2PAK Packaging: Bulk Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 116A (Tc) Rds On (Max) @ Id, Vgs: 5.8mOhm @ 40A, 10V Power Dissipation (Max): 3W (Ta), 150W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: D2PAK Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 32 V | auf Bestellung 14400 Stücke: Lieferzeit 10-14 Tag (e) |
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| NTB5405NT4G | onsemi | Description: MOSFET N-CH 40V 116A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 116A (Tc) Rds On (Max) @ Id, Vgs: 5.8mOhm @ 40A, 10V Power Dissipation (Max): 3W (Ta), 150W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: D2PAK Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 32 V | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTB5405NT4G | ON Semiconductor | MOSFET NFET 40V 116A PB | auf Bestellung 852 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||||
| NTB5411NT4G | ON Semiconductor | Description: MOSFET N-CH 60V 80A D2PAK | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTB5412NT4G | onsemi | Description: MOSFET N-CH 60V 60A D2PAK Packaging: Bulk Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 14mOhm @ 30A, 10V Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D2PAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 0 V Input Capacitance (Ciss) (Max) @ Vds: 3220 pF @ 25 V | auf Bestellung 23200 Stücke: Lieferzeit 10-14 Tag (e) |
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| NTB5412NT4G | ON Semiconductor | Trans MOSFET N-CH 60V 60A 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTB5412NT4G | onsemi | Description: MOSFET N-CH 60V 60A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 14mOhm @ 30A, 10V Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D2PAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 0 V Input Capacitance (Ciss) (Max) @ Vds: 3220 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTB5426NT4G | onsemi | Description: MOSFET N-CH 60V 120A D2PAK | auf Bestellung 7636 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||||
| NTB5605P | ON | SOT-263 | auf Bestellung 50000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| NTB5605P | ON | 09+ SMA | auf Bestellung 1500 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| NTB5605P | ON Semiconductor | Description: MOSFET P-CH 60V 18.5A D2PAK | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTB5605P | ON | TO-263/D2-PAK | auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| NTB5605P | ON | 07+ SOT-263 | auf Bestellung 50000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| NTB5605PG | ON Semiconductor | Description: MOSFET P-CH 60V 18.5A D2PAK | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTB5605PG | Rochester Electronics, LLC | Description: P-CHANNEL POWER MOSFET | auf Bestellung 10 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||||
| NTB5605PT4 | ON | 07+ TO-263/D2-PAK | auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| NTB5605PT4 | ON Semiconductor | Description: MOSFET P-CH 60V 18.5A D2PAK | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTB5605PT4 | ON | TO-263/D2-PAK | auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| NTB5605PT4G | ON Semiconductor | Description: MOSFET P-CH 60V 18.5A D2PAK | auf Bestellung 3200 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||||
| NTB5605PT4G | ON Semiconductor | MOSFET -60V -18.5A P-Channel | auf Bestellung 1781 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||||
| NTB5605PT4G | ON Semiconductor | Description: MOSFET P-CH 60V 18.5A D2PAK | auf Bestellung 3765 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||||
| NTB5605T4G | ON Semiconductor | Description: MOSFET P-CH 60V 18.5A D2PAK | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTB5D0N15MC | onsemi | MOSFET PTNG 150V N-FET D2PAK | auf Bestellung 2083 Stücke: Lieferzeit 10-14 Tag (e) |
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| NTB5D0N15MC | ON Semiconductor | auf Bestellung 625 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||||
| NTB60N06 | ON | 07+ SOT-263 | auf Bestellung 5000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| NTB60N06 | ON | TO-263/D2-PAK | auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| NTB60N06 | ON | SOT-263 | auf Bestellung 5000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| NTB60N06 | onsemi | MOSFET 60V 60A N-Channel | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTB60N06G | onsemi | MOSFET 60V 60A N-Channel | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTB60N06G | ON | TO-263/D2-PAK | auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| NTB60N06G | onsemi | Description: MOSFET N-CH 60V 60A D2PAK Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Ta) Rds On (Max) @ Id, Vgs: 14mOhm @ 30A, 10V Power Dissipation (Max): 2.4W (Ta), 150W (Tj) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D2PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3220 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTB60N06G | ON | 07+ TO-263/D2-PAK | auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| NTB60N06L | ON | 07+ SOT-263 | auf Bestellung 5000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| NTB60N06L | onsemi | Description: MOSFET N-CH 60V 60A D2PAK Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Ta) Rds On (Max) @ Id, Vgs: 16mOhm @ 30A, 5V Power Dissipation (Max): 2.4W (Ta), 150W (Tj) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: D2PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): ±15V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 3075 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTB60N06L | ON | SOT-263 | auf Bestellung 5000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| NTB60N06L | onsemi | MOSFET 60V 60A N-Channel | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTB60N06LG | onsemi | Description: MOSFET N-CH 60V 60A D2PAK Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Ta) Rds On (Max) @ Id, Vgs: 16mOhm @ 30A, 5V Power Dissipation (Max): 2.4W (Ta), 150W (Tj) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: D2PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): ±15V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 3075 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTB60N06LG | onsemi | MOSFET 60V 60A N-Channel | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTB60N06LT4 | onsemi | MOSFET 60V 60A N-Channel | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTB60N06LT4 | onsemi | Description: MOSFET N-CH 60V 60A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Ta) Rds On (Max) @ Id, Vgs: 16mOhm @ 30A, 5V Power Dissipation (Max): 2.4W (Ta), 150W (Tj) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: D2PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): ±15V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 3075 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTB60N06LT4G | ON Semiconductor | Trans MOSFET N-CH 60V 60A 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTB60N06LT4G | onsemi | Description: MOSFET N-CH 60V 60A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Ta) Rds On (Max) @ Id, Vgs: 16mOhm @ 30A, 5V Power Dissipation (Max): 2.4W (Ta), 150W (Tj) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: D2PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): ±15V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 3075 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTB60N06LT4G | auf Bestellung 520 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
| NTB60N06LT4G | onsemi | MOSFET 60V 60A N-Channel | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTB60N06LT4G | onsemi | Description: MOSFET N-CH 60V 60A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Ta) Rds On (Max) @ Id, Vgs: 16mOhm @ 30A, 5V Power Dissipation (Max): 2.4W (Ta), 150W (Tj) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: D2PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): ±15V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 3075 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTB60N06LT4GOS | onsemi | MOSFET Discrete Semiconductor Products FETs - Single - MOSFET N-CH 60V 60A D2PAK | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTB60N06T4 | ON | TO-263/D2-PAK | auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| NTB60N06T4 | ON | 07+ TO-263/D2-PAK | auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| NTB60N06T4 | onsemi | MOSFET 60V 60A N-Channel | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTB60N06T4G | onsemi | Description: MOSFET N-CH 60V 60A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Ta) Rds On (Max) @ Id, Vgs: 14mOhm @ 30A, 10V Power Dissipation (Max): 2.4W (Ta), 150W (Tj) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D2PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3220 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTB60N06T4G | ON | TO-263/D2-PAK | auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| NTB60N06T4G | onsemi | Description: MOSFET N-CH 60V 60A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Ta) Rds On (Max) @ Id, Vgs: 14mOhm @ 30A, 10V Power Dissipation (Max): 2.4W (Ta), 150W (Tj) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D2PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3220 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTB60N06T4G | onsemi | MOSFET 60V 60A N-Channel | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTB60N06T4G | ON Semiconductor | Trans MOSFET N-CH 60V 60A 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTB60N06T4GOS | onsemi | MOSFET Discrete Semiconductor Products FETs - Single - MOSFET N-CH 60V 60A D2PAK | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTB6410ANG | ON Semiconductor | Description: MOSFET N-CH 100V 76A D2PAK | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTB6410ANT4G | ON Semiconductor | Description: MOSFET N-CH 100V 76A D2PAK | auf Bestellung 800 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||||
| NTB6410ANT4G | ON Semiconductor | Description: MOSFET N-CH 100V 76A D2PAK | auf Bestellung 1087 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||||
| NTB6410ANT4G | ON Semiconductor | auf Bestellung 1 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||||
| NTB6410ANT4G | onsemi | MOSFET NFET D2PAK 100V 76A 13MOH | auf Bestellung 2350 Stücke: Lieferzeit 375-379 Tag (e) |
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| NTB6410ANT4G | ON Semiconductor | Description: MOSFET N-CH 100V 76A D2PAK | auf Bestellung 1087 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||||
| NTB6411ANG | onsemi | Description: MOSFET N-CH 100V 77A D2PAK Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 77A (Tc) Rds On (Max) @ Id, Vgs: 14mOhm @ 72A, 10V Power Dissipation (Max): 217W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D2PAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3700 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTB6411ANG | ONSEMI | Description: ONSEMI - NTB6411ANG - NTB6411ANG, SINGLE MOSFETS tariffCode: 85412900 productTraceability: Yes-Date/Lot Code rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) | auf Bestellung 1782 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| NTB6411ANT4G | onsemi | Description: MOSFET N-CH 100V 77A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 77A (Tc) Rds On (Max) @ Id, Vgs: 14mOhm @ 72A, 10V Power Dissipation (Max): 217W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D2PAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3700 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTB6411ANT4G | ON Semiconductor | auf Bestellung 46 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||||
| NTB6411ANT4G | onsemi | MOSFET NFET D2PAK 100V 75A 16MO | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTB6411ANT4G | ONSEMI | Description: ONSEMI - NTB6411ANT4G - NTB6411ANT4G, SINGLE MOSFETS tariffCode: 85412900 productTraceability: Yes-Date/Lot Code rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) | auf Bestellung 2868 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| NTB6411ANT4G | ON Semiconductor | Trans MOSFET N-CH 100V 77A 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTB6411ANT4G | onsemi | Description: MOSFET N-CH 100V 77A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 77A (Tc) Rds On (Max) @ Id, Vgs: 14mOhm @ 72A, 10V Power Dissipation (Max): 217W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D2PAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3700 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTB6411ANT4G | ON Semiconductor | Trans MOSFET N-CH 100V 77A 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTB6412ANG | ON Semiconductor | Trans MOSFET N-CH 100V 58A 3-Pin(2+Tab) D2PAK Tube | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTB6412ANG | onsemi | Description: MOSFET N-CH 100V 58A D2PAK Packaging: Tube Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 58A (Tc) Rds On (Max) @ Id, Vgs: 18.2mOhm @ 58A, 10V Power Dissipation (Max): 167W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D²PAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 25 V | auf Bestellung 8806 Stücke: Lieferzeit 10-14 Tag (e) |
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| NTB6412ANG | ON Semiconductor | Trans MOSFET N-CH 100V 58A 3-Pin(2+Tab) D2PAK Tube | auf Bestellung 705 Stücke: Lieferzeit 14-21 Tag (e) |
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| NTB6412ANG | ON Semiconductor | Trans MOSFET N-CH 100V 58A 3-Pin(2+Tab) D2PAK Rail | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTB6412ANG | onsemi | Description: MOSFET N-CH 100V 58A D2PAK Packaging: Tube Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 58A (Tc) Rds On (Max) @ Id, Vgs: 18.2mOhm @ 58A, 10V Power Dissipation (Max): 167W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D²PAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTB6412ANT4G | onsemi | Description: MOSFET N-CH 100V 58A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 58A (Tc) Rds On (Max) @ Id, Vgs: 18.2mOhm @ 58A, 10V Power Dissipation (Max): 167W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D²PAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTB6412ANT4G | onsemi | Description: MOSFET N-CH 100V 58A D2PAK Packaging: Bulk Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 58A (Tc) Rds On (Max) @ Id, Vgs: 18.2mOhm @ 58A, 10V Power Dissipation (Max): 167W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D²PAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 25 V | auf Bestellung 2519 Stücke: Lieferzeit 10-14 Tag (e) |
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| NTB6412ANT4G | onsemi | Description: MOSFET N-CH 100V 58A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 58A (Tc) Rds On (Max) @ Id, Vgs: 18.2mOhm @ 58A, 10V Power Dissipation (Max): 167W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D²PAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTB6412ANT4G | ON Semiconductor | Trans MOSFET N-CH 100V 58A 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTB6412ANT4G | ON Semiconductor | auf Bestellung 2192 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||||
| NTB6413ANG | ON Semiconductor | Trans MOSFET N-CH 100V 42A 3-Pin(2+Tab) D2PAK Tube | auf Bestellung 176 Stücke: Lieferzeit 14-21 Tag (e) |
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| NTB6413ANG | ON Semiconductor | Description: MOSFET N-CH 100V 42A D2PAK | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTB6413ANT4G | ON Semiconductor | Description: MOSFET N-CH 100V 42A D2PAK | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTB6413ANT4G | ON Semiconductor | auf Bestellung 540 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||||
| NTB6413ANT4G | onsemi | MOSFET NFET D2PAK 100V 40A 30MO | auf Bestellung 1497 Stücke: Lieferzeit 10-14 Tag (e) |
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| NTB6413ANT4G | ON Semiconductor | Description: MOSFET N-CH 100V 42A D2PAK | auf Bestellung 36 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||||
| NTB6448ANG | ON Semiconductor | Description: MOSFET N-CH 100V 80A D2PAK | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTB6448ANT4G | ON Semiconductor | Description: MOSFET N-CH 100V 80A D2PAK | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTB65N02R | ON | 07+ SOT-263 | auf Bestellung 15000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| NTB65N02R | ON | TO-263/D2-PAK | auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| NTB65N02R | ON | SOT-263 | auf Bestellung 15000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| NTB65N02R | onsemi | Description: MOSFET N-CH 25V 65A D2PAK Packaging: Tube Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 65A (Tc) Rds On (Max) @ Id, Vgs: 8.2mOhm @ 30A, 10V Power Dissipation (Max): 1.04W (Ta), 62.5W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: D2PAK Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1330 pF @ 20 V | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTB65N02RG | onsemi | Description: MOSFET N-CH 25V 65A D2PAK Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 65A (Tc) Rds On (Max) @ Id, Vgs: 8.2mOhm @ 30A, 10V Power Dissipation (Max): 1.04W (Ta), 62.5W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: D2PAK Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1330 pF @ 20 V | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTB65N02RT4 | ON | TO-263/D2-PAK | auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| NTB65N02RT4 | ON Semiconductor | Description: MOSFET N-CH 25V 7.6A D2PAK | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTB65N02RT4 | ON | SOT263 | auf Bestellung 400 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| NTB65N02RT4 | ON Semiconductor | Description: MOSFET N-CH 25V 7.6A D2PAK | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTB65N02RT4G | auf Bestellung 442 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
| NTB65N02RT4G | onsemi | Description: MOSFET N-CH 25V 7.6A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.6A (Tc) Rds On (Max) @ Id, Vgs: 8.2mOhm @ 30A, 10V Power Dissipation (Max): 1.04W (Ta), 62.5W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: D2PAK Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1330 pF @ 20 V | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTB65N02RT4G | onsemi | Description: MOSFET N-CH 25V 7.6A D2PAK Packaging: Bulk Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.6A (Tc) Rds On (Max) @ Id, Vgs: 8.2mOhm @ 30A, 10V Power Dissipation (Max): 1.04W (Ta), 62.5W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: D2PAK Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1330 pF @ 20 V | auf Bestellung 4000 Stücke: Lieferzeit 10-14 Tag (e) |
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| NTB6N60 | onsemi | Description: N-CHANNEL POWER MOSFET Packaging: Bulk Part Status: Active | auf Bestellung 10048 Stücke: Lieferzeit 10-14 Tag (e) |
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| NTB6N60 | ONSEMI | Description: ONSEMI - NTB6N60 - 6A, 600V, 1.2OHM, N-CHANNEL POWER MOSFET tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) | auf Bestellung 9939 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| NTB6N60T4 | Motorola | Description: N-CHANNEL POWER MOSFET Packaging: Bulk Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Rds On (Max) @ Id, Vgs: 1.2Ohm @ 3A, 10V Power Dissipation (Max): 142W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D2PAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1670 pF @ 25 V | auf Bestellung 6400 Stücke: Lieferzeit 10-14 Tag (e) |
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| NTB75N03-006 | ON | SOT-263 | auf Bestellung 5000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| NTB75N03-006 | onsemi | Description: MOSFET N-CH 30V 75A D2PAK Packaging: Tube Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 6.5mOhm @ 37.5A, 10V Power Dissipation (Max): 2.5W (Ta), 125W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: D2PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 5635 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTB75N03-006 | ON | 07+ SOT-263 | auf Bestellung 5000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| NTB75N03-06 | ON | 09+ BGA | auf Bestellung 1500 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| NTB75N03-06 | ON | 07+ TO-263/D2-PAK | auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| NTB75N03-06 | ON | TO-263/D2-PAK | auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| NTB75N03-06T4 | onsemi | Description: MOSFET N-CH 30V 75A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 6.5mOhm @ 37.5A, 10V Power Dissipation (Max): 2.5W (Ta), 125W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: D2PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 5635 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTB75N03-06T4 | ON | TO-263/D2-PAK | auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| NTB75N03-6G | onsemi | Description: MOSFET N-CH 30V 75A D2PAK Packaging: Tube Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 6.5mOhm @ 37.5A, 10V Power Dissipation (Max): 2.5W (Ta), 125W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: D2PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 5635 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTB75N03-6T4G | onsemi | Description: MOSFET N-CH 30V 75A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 6.5mOhm @ 37.5A, 10V Power Dissipation (Max): 2.5W (Ta), 125W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: D2PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 5635 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTB75N03L09 | ON | 07+ SOT-263 | auf Bestellung 5000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| NTB75N03L09 | ON | TO-263/D2-PAK | auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| NTB75N03L09 | onsemi | MOSFET 30V 75A N-Channel | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTB75N03L09 | ON | SOT-263 | auf Bestellung 5000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| NTB75N03L09G | onsemi | MOSFET 30V 75A N-Channel | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTB75N03L09G | ON Semiconductor | Trans MOSFET N-CH 30V 75A 3-Pin(2+Tab) D2PAK Tube | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTB75N03L09G | ON | TO-263/D2-PAK | auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| NTB75N03L09G | onsemi | Description: MOSFET N-CH 30V 75A D2PAK Packaging: Tube Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 37.5A, 5V Power Dissipation (Max): 2.5W (Ta), 125W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: D2PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 5635 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTB75N03L09G | ON | 07+ TO-263/D2-PAK | auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| NTB75N03L09T4 | ON | 07+ TO-263/D2-PAK | auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| NTB75N03L09T4 | onsemi | Description: MOSFET N-CH 30V 75A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 37.5A, 5V Power Dissipation (Max): 2.5W (Ta), 125W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: D2PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 5635 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTB75N03L09T4 | onsemi | MOSFET 30V 75A N-Channel | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTB75N03L09T4 | ON | TO-263/D2-PAK | auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| NTB75N03L09T4G | onsemi | Description: MOSFET N-CH 30V 75A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 37.5A, 5V Power Dissipation (Max): 2.5W (Ta), 125W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: D2PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 5635 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTB75N03L09T4G | onsemi | MOSFET 30V 75A N-Channel | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTB75N03L09T4G | ON Semiconductor | Trans MOSFET N-CH 30V 75A 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTB75N03R | ON | 07+ SOT-263 | auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| NTB75N03R | ON | TO-263/D2-PAK | auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| NTB75N03R | onsemi | Description: MOSFET N-CH 25V 9.7A/75A D2PAK Packaging: Tube Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.7A (Ta), 75A (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V Power Dissipation (Max): 1.25W (Ta), 74.4W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: D²PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 13.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1333 pF @ 20 V | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTB75N03R | ON | SOT-263 | auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| NTB75N03RG | auf Bestellung 4800 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
| NTB75N03RG | onsemi | Description: MOSFET N-CH 25V 9.7A/75A D2PAK Packaging: Tube Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.7A (Ta), 75A (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V Power Dissipation (Max): 1.25W (Ta), 74.4W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: D²PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 13.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1333 pF @ 20 V | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTB75N03RT4 | ON | TO-263/D2-PAK | auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| NTB75N03RT4 | onsemi | Description: MOSFET N-CH 25V 9.7A/75A D2PAK Packaging: Bulk Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.7A (Ta), 75A (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V Power Dissipation (Max): 1.25W (Ta), 74.4W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: D²PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 13.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1333 pF @ 20 V | auf Bestellung 89600 Stücke: Lieferzeit 10-14 Tag (e) |
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| NTB75N03RT4 | ON | 07+ TO-263/D2-PAK | auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| NTB75N03RT4 | onsemi | Description: MOSFET N-CH 25V 9.7A/75A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.7A (Ta), 75A (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V Power Dissipation (Max): 1.25W (Ta), 74.4W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: D²PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 13.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1333 pF @ 20 V | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTB75N03RT4G | onsemi | Description: MOSFET N-CH 25V 9.7A/75A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.7A (Ta), 75A (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V Power Dissipation (Max): 1.25W (Ta), 74.4W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: D²PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 13.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1333 pF @ 20 V | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTB75N03RT4G | ON Semiconductor | Trans MOSFET N-CH 25V 12.6A 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTB75N03RT4G | ON Semiconductor | Trans MOSFET N-CH 25V 12.6A 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTB75N03RT4G | onsemi | Description: MOSFET N-CH 25V 9.7A/75A D2PAK Packaging: Bulk Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.7A (Ta), 75A (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V Power Dissipation (Max): 1.25W (Ta), 74.4W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: D²PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 13.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1333 pF @ 20 V | auf Bestellung 4166 Stücke: Lieferzeit 10-14 Tag (e) |
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| NTB75N03RT4G | ON | auf Bestellung 2100 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||||
| NTB75N06 | ON | SOT-263 | auf Bestellung 45000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| NTB75N06 | ON | 07+ SOT-263 | auf Bestellung 45000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| NTB75N06 | ON | TO-263/D2-PAK | auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| NTB75N06 | onsemi | MOSFET 60V 75A N-Channel | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTB75N06G | onsemi | Description: MOSFET N-CH 60V 75A D2PAK Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Ta) Rds On (Max) @ Id, Vgs: 9.5mOhm @ 37.5A, 10V Power Dissipation (Max): 2.4W (Ta), 214W (Tj) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D2PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4510 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTB75N06G | ON | 07+ TO-263/D2-PAK | auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| NTB75N06G | onsemi | MOSFET 60V 75A N-Channel | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTB75N06G | ON Semiconductor | Trans MOSFET N-CH 60V 75A 3-Pin(2+Tab) D2PAK Tube | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTB75N06G | ON | TO-263/D2-PAK | auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| NTB75N06L | ON | SOT-263 | auf Bestellung 5000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| NTB75N06L | ON | 07+ SOT-263 | auf Bestellung 5000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| NTB75N06L | onsemi | Description: MOSFET N-CH 60V 75A D2PAK Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Ta) Rds On (Max) @ Id, Vgs: 11mOhm @ 37.5A, 5V Power Dissipation (Max): 2.4W (Ta), 214W (Tj) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: D2PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 4370 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTB75N06LG | onsemi | Description: MOSFET N-CH 60V 75A D2PAK Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Ta) Rds On (Max) @ Id, Vgs: 11mOhm @ 37.5A, 5V Power Dissipation (Max): 2.4W (Ta), 214W (Tj) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: D2PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 4370 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTB75N06LG | auf Bestellung 4800 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
| NTB75N06LT4 | onsemi | Description: MOSFET N-CH 60V 75A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Ta) Rds On (Max) @ Id, Vgs: 11mOhm @ 37.5A, 5V Power Dissipation (Max): 2.4W (Ta), 214W (Tj) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: D2PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 4370 pF @ 25 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25 | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTB75N06LT4G | auf Bestellung 4800 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
| NTB75N06LT4G | onsemi | Description: MOSFET N-CH 60V 75A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Ta) Rds On (Max) @ Id, Vgs: 11mOhm @ 37.5A, 5V Power Dissipation (Max): 2.4W (Ta), 214W (Tj) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: D2PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 4370 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTB75N06T4 | ON | TO-263/D2-PAK | auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| NTB75N06T4 | ON | 07+ TO-263/D2-PAK | auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| NTB75N06T4G | ON | 07+ TO-263/D2-PAK | auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| NTB75N06T4G | onsemi | Description: MOSFET N-CH 60V 75A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Ta) Rds On (Max) @ Id, Vgs: 9.5mOhm @ 37.5A, 10V Power Dissipation (Max): 2.4W (Ta), 214W (Tj) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D2PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4510 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTB75N06T4G | ON Semiconductor | Trans MOSFET N-CH 60V 75A 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTB75N06T4G | ON | TO-263/D2-PAK | auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| NTB75N06T4G | onsemi | Description: MOSFET N-CH 60V 75A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Ta) Rds On (Max) @ Id, Vgs: 9.5mOhm @ 37.5A, 10V Power Dissipation (Max): 2.4W (Ta), 214W (Tj) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D2PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4510 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTB75N06T4G | ON Semiconductor | Trans MOSFET N-CH 60V 75A 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTB75N06T4GOS | onsemi | MOSFET Discrete Semiconductor Products FETs - Single - MOSFET N-CH 60V 75A D2PAK | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTB7D3N15MC | ONSEMI | Description: ONSEMI - NTB7D3N15MC - Leistungs-MOSFET, n-Kanal, 150 V, 101 A, 0.006 ohm, TO-263 (D2PAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 150V rohsCompliant: YES Dauer-Drainstrom Id: 101A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Verlustleistung Pd: 166W Gate-Source-Schwellenspannung, max.: 4.5V euEccn: NLR Verlustleistung: 166W Bauform - Transistor: TO-263 (D2PAK) Qualifizierungsstandard der Automobilindustrie: - Anzahl der Pins: 3Pin(s) Produktpalette: PowerTrench productTraceability: Yes-Date/Lot Code Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Betriebswiderstand, Rds(on): 0.006ohm Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.006ohm SVHC: Lead (14-Jun-2023) | auf Bestellung 143 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| NTB7D3N15MC | onsemi | Description: NTB7D3N15MC Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15.2A (Ta), 101A (Tc) Rds On (Max) @ Id, Vgs: 7.3mOhm @ 62A, 10V Power Dissipation (Max): 3.75W (Ta), 166W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 342µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4250 pF @ 75 V | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTB7D3N15MC | ONSEMI | Description: ONSEMI - NTB7D3N15MC - Leistungs-MOSFET, n-Kanal, 150 V, 101 A, 0.006 ohm, TO-263 (D2PAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 150V rohsCompliant: YES Dauer-Drainstrom Id: 101A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4.5V euEccn: NLR Verlustleistung: 166W Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 3Pin(s) Produktpalette: PowerTrench productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.006ohm SVHC: Lead (14-Jun-2023) | auf Bestellung 143 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| NTB7D3N15MC | ON Semiconductor | Trans MOSFET N-CH 150V 15.2A 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTB7D3N15MC | onsemi | MOSFET MOSFET - N-Channel Shielded Gate PowerTrench 150 V, 7.3 mohm, 101 A | auf Bestellung 2738 Stücke: Lieferzeit 10-14 Tag (e) |
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| NTB7D3N15MC | onsemi | Description: NTB7D3N15MC Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15.2A (Ta), 101A (Tc) Rds On (Max) @ Id, Vgs: 7.3mOhm @ 62A, 10V Power Dissipation (Max): 3.75W (Ta), 166W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 342µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4250 pF @ 75 V | auf Bestellung 384 Stücke: Lieferzeit 10-14 Tag (e) |
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| NTB85N03 | ON | 07+ SOT-263 | auf Bestellung 40000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| NTB85N03 | ON | TO-263 | auf Bestellung 10000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| NTB85N03 | onsemi | Description: MOSFET N-CH 28V 85A D2PAK Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 85A (Tc) Rds On (Max) @ Id, Vgs: 6.8mOhm @ 40A, 10V Power Dissipation (Max): 80W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: D2PAK Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 28 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 24 V | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTB85N03 | ON | SOT-263 | auf Bestellung 40000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| NTB85N03 | ON | TO-263/D2-PAK | auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| NTB85N03G | onsemi | Description: MOSFET N-CH 28V 85A D2PAK Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 85A (Tc) Rds On (Max) @ Id, Vgs: 6.8mOhm @ 40A, 10V Power Dissipation (Max): 80W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: D2PAK Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 28 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 24 V | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTB85N03G | auf Bestellung 4800 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
| NTB85N03R | auf Bestellung 5000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
| NTB85N03T4 | ON | TO-263/D2-PAK | auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| NTB85N03T4 | onsemi | Description: MOSFET N-CH 28V 85A D2PAK Packaging: Cut Tape (CT) | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTB85N03T4G | auf Bestellung 4800 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
| NTB85N03T4G | onsemi | Description: MOSFET N-CH 28V 85A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 85A (Tc) Rds On (Max) @ Id, Vgs: 6.8mOhm @ 40A, 10V Power Dissipation (Max): 80W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: D2PAK Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 28 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 24 V | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTB85N03TB | auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
| NTB8N50 | onsemi | Description: N-CHANNEL POWER MOSFET Packaging: Bulk Part Status: Active | auf Bestellung 4250 Stücke: Lieferzeit 10-14 Tag (e) |
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| NTB90N02 | ON | TO-263/D2-PAK | auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| NTB90N02 | ON | 07+ TO-263/D2-PAK | auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| NTB90N02 | onsemi | Description: MOSFET N-CH 24V 90A D2PAK Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Ta) Rds On (Max) @ Id, Vgs: 5.8mOhm @ 90A, 10V Power Dissipation (Max): 85W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: D2PAK Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 24 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2120 pF @ 20 V | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTB90N02G | onsemi | Description: MOSFET N-CH 24V 90A D2PAK Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Ta) Rds On (Max) @ Id, Vgs: 5.8mOhm @ 90A, 10V Power Dissipation (Max): 85W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: D2PAK Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 24 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2120 pF @ 20 V | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTB90N02G | auf Bestellung 4800 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
| NTB90N02T | auf Bestellung 2500 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
| NTB90N02T4 | ON | TO-263/D2-PAK | auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| NTB90N02T4 | onsemi | Description: MOSFET N-CH 24V 90A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Ta) Rds On (Max) @ Id, Vgs: 5.8mOhm @ 90A, 10V Power Dissipation (Max): 85W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: D2PAK Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 24 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2120 pF @ 20 V | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTB90N02T4 | ON | 07+; | auf Bestellung 135 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| NTB90N02T4 | onsemi | Description: MOSFET N-CH 24V 90A D2PAK Packaging: Bulk Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Ta) Rds On (Max) @ Id, Vgs: 5.8mOhm @ 90A, 10V Power Dissipation (Max): 85W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: D2PAK Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 24 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2120 pF @ 20 V | auf Bestellung 180000 Stücke: Lieferzeit 10-14 Tag (e) |
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| NTB90N02T4 | ON | 07+ TO-263/D2-PAK | auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| NTB90N02T4G | onsemi | Description: MOSFET N-CH 24V 90A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Ta) Rds On (Max) @ Id, Vgs: 5.8mOhm @ 90A, 10V Power Dissipation (Max): 85W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: D2PAK Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 24 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2120 pF @ 20 V | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTB90N02T4G | ON | 10+ BGA | auf Bestellung 4600 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| NTB90N02T4G | onsemi | Description: MOSFET N-CH 24V 90A D2PAK Packaging: Bulk Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Ta) Rds On (Max) @ Id, Vgs: 5.8mOhm @ 90A, 10V Power Dissipation (Max): 85W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: D2PAK Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 24 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2120 pF @ 20 V | auf Bestellung 5795 Stücke: Lieferzeit 10-14 Tag (e) |
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| NTB90N20 | ON | 07+ SOT-263 | auf Bestellung 5000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| NTB90N20 | ON | SOT-263 | auf Bestellung 5000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| NTBA104BQ,115 | NXP Semiconductors | Translation - Voltage Levels | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTBA104GU12 | NXP Semiconductors | NXP Semiconductors Dual supply translating transceiver; auto direction sensing; 3-state | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTBA104GU12,115 | NXP USA Inc. | Description: VOLTAGE LEVEL TRANSLATOR BIDIREC | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTBA104GU12,115 | NXP Semiconductors | Voltage Level Translator 4-CH Bidirectional 12-Pin XQFN T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTBA104GU12,115 | NXP Semiconductors | Translation - Voltage Levels Dual supply translating transcvr | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTBA104GU16,115 | NXP Semiconductors | Translation - Voltage Levels | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTBG014N120M3P | onsemi | Description: SIC MOSFET 1200 V 14 MOHM M3P SE Packaging: Cut Tape (CT) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 104A (Tc) Rds On (Max) @ Id, Vgs: 20mOhm @ 74A, 18V Power Dissipation (Max): 454W (Tc) Vgs(th) (Max) @ Id: 4.63V @ 37mA Supplier Device Package: D2PAK-7 Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs (Max): +22V, -10V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 337 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 6313 pF @ 800 V | auf Bestellung 288 Stücke: Lieferzeit 10-14 Tag (e) |
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| NTBG014N120M3P | onsemi | MOSFET Silicon Carbide (SiC) MOSFET - EliteSiC, 14 mohm, 1200 V, M3P, D2PAK-7L | auf Bestellung 1661 Stücke: Lieferzeit 10-14 Tag (e) |
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| NTBG014N120M3P | onsemi | Description: SIC MOSFET 1200 V 14 MOHM M3P SE Packaging: Tape & Reel (TR) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 104A (Tc) Rds On (Max) @ Id, Vgs: 20mOhm @ 74A, 18V Power Dissipation (Max): 454W (Tc) Vgs(th) (Max) @ Id: 4.63V @ 37mA Supplier Device Package: D2PAK-7 Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs (Max): +22V, -10V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 337 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 6313 pF @ 800 V | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTBG014N120M3P | ON Semiconductor | SiC MOSFET 1200 V 14 mohm | auf Bestellung 1600 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| NTBG015N065SC1 | onsemi | MOSFET SIC MOS D2PAK-7L 650V | auf Bestellung 942 Stücke: Lieferzeit 10-14 Tag (e) |
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| NTBG015N065SC1 | ON Semiconductor | Trans MOSFET N-CH SiC 650V 176A 8-Pin(7+Tab) D2PAK T/R | auf Bestellung 800 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| NTBG015N065SC1 | onsemi | Description: SILICON CARBIDE MOSFET, NCHANNEL Packaging: Cut Tape (CT) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 145A (Tc) Rds On (Max) @ Id, Vgs: 18mOhm @ 75A, 18V Power Dissipation (Max): 500W (Tc) Vgs(th) (Max) @ Id: 4.3V @ 25mA Supplier Device Package: D2PAK-7 Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs (Max): +22V, -8V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 283 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 4689 pF @ 325 V | auf Bestellung 2260 Stücke: Lieferzeit 10-14 Tag (e) |
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| NTBG015N065SC1 | ONSEMI | Description: ONSEMI - NTBG015N065SC1 - Siliziumkarbid-MOSFET, EliteSiC, Eins, n-Kanal, 145 A, 650 V, 0.012 ohm, TO-263 (D2PAK) tariffCode: 85412900 Drain-Source-Spannung Vds: 650V rohsCompliant: Y-EX Dauer-Drainstrom Id: 145A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.8V MOSFET-Modul-Konfiguration: Eins euEccn: NLR Verlustleistung: 500W Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 7Pin(s) productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 18V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.012ohm | auf Bestellung 361 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| NTBG015N065SC1 | onsemi | Description: SILICON CARBIDE MOSFET, NCHANNEL Packaging: Tape & Reel (TR) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 145A (Tc) Rds On (Max) @ Id, Vgs: 18mOhm @ 75A, 18V Power Dissipation (Max): 500W (Tc) Vgs(th) (Max) @ Id: 4.3V @ 25mA Supplier Device Package: D2PAK-7 Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs (Max): +22V, -8V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 283 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 4689 pF @ 325 V | auf Bestellung 1600 Stücke: Lieferzeit 10-14 Tag (e) |
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| NTBG020N090SC1 | onsemi | Description: SICFET N-CH 900V 9.8A/112A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.8A (Ta), 112A (Tc) Rds On (Max) @ Id, Vgs: 28mOhm @ 60A, 15V Power Dissipation (Max): 3.7W (Ta), 477W (Tc) Vgs(th) (Max) @ Id: 4.3V @ 20mA Supplier Device Package: D2PAK-7 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): +19V, -10V Drain to Source Voltage (Vdss): 900 V Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 4415 pF @ 450 V | auf Bestellung 800 Stücke: Lieferzeit 10-14 Tag (e) |
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| NTBG020N090SC1 | ONSEMI | Description: ONSEMI - NTBG020N090SC1 - Siliziumkarbid-MOSFET, EliteSiC, Eins, n-Kanal, 112 A, 900 V, 0.02 ohm, TO-263 (D2PAK) tariffCode: 85412900 Drain-Source-Spannung Vds: 900V rohsCompliant: Y-EX Dauer-Drainstrom Id: 112A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.6V MOSFET-Modul-Konfiguration: Eins euEccn: NLR Verlustleistung: 477W Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 7Pin(s) productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 15V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.02ohm | auf Bestellung 279 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| NTBG020N090SC1 | ON Semiconductor | auf Bestellung 550 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||||
| NTBG020N090SC1 | ON Semiconductor | Trans MOSFET N-CH SiC 900V 9.8A 8-Pin(7+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTBG020N090SC1 | onsemi | Description: SICFET N-CH 900V 9.8A/112A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.8A (Ta), 112A (Tc) Rds On (Max) @ Id, Vgs: 28mOhm @ 60A, 15V Power Dissipation (Max): 3.7W (Ta), 477W (Tc) Vgs(th) (Max) @ Id: 4.3V @ 20mA Supplier Device Package: D2PAK-7 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): +19V, -10V Drain to Source Voltage (Vdss): 900 V Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 4415 pF @ 450 V | auf Bestellung 1045 Stücke: Lieferzeit 10-14 Tag (e) |
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| NTBG020N090SC1 | onsemi | MOSFET SIC MOS 20MOHM 900V | auf Bestellung 1655 Stücke: Lieferzeit 10-14 Tag (e) |
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| NTBG020N090SC1 | ONSEMI | Description: ONSEMI - NTBG020N090SC1 - Siliziumkarbid-MOSFET, EliteSiC, Eins, n-Kanal, 112 A, 900 V, 0.02 ohm, TO-263 (D2PAK) tariffCode: 85412900 Drain-Source-Spannung Vds: 900V rohsCompliant: Y-EX Dauer-Drainstrom Id: 112A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.6V MOSFET-Modul-Konfiguration: Eins euEccn: NLR Verlustleistung: 477W Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 7Pin(s) productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 15V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.02ohm | auf Bestellung 279 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| NTBG020N090SC1 | ON Semiconductor | Trans MOSFET N-CH SiC 900V 9.8A 8-Pin(7+Tab) D2PAK T/R | auf Bestellung 270 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| NTBG020N120SC1 | ON Semiconductor | auf Bestellung 571 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||||
| NTBG020N120SC1 | ONSEMI | Description: ONSEMI - NTBG020N120SC1 - Siliziumkarbid-MOSFET, EliteSiC, Eins, n-Kanal, 98 A, 1.2 kV, 0.02 ohm, TO-263 (D2PAK) tariffCode: 85412900 Drain-Source-Spannung Vds: 1.2kV rohsCompliant: Y-EX Dauer-Drainstrom Id: 98A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.7V MOSFET-Modul-Konfiguration: Eins euEccn: NLR Verlustleistung: 468W Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 7Pin(s) productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 20V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.02ohm | auf Bestellung 690 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| NTBG020N120SC1 | ON Semiconductor | Trans MOSFET N-CH SiC 1.2KV 8.6A 8-Pin(7+Tab) D2PAK T/R | auf Bestellung 530 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| NTBG020N120SC1 | onsemi | Description: SICFET N-CH 1200V 8.6A/98A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.6A (Ta), 98A (Tc) Rds On (Max) @ Id, Vgs: 28mOhm @ 60A, 20V Power Dissipation (Max): 3.7W (Ta), 468W (Tc) Vgs(th) (Max) @ Id: 4.3V @ 20mA Supplier Device Package: D2PAK-7 Drive Voltage (Max Rds On, Min Rds On): 20V Vgs (Max): +25V, -15V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 2943 pF @ 800 V | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTBG020N120SC1 | onsemi | MOSFET SIC MOS 20MW 1200V | auf Bestellung 1738 Stücke: Lieferzeit 10-14 Tag (e) |
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| NTBG020N120SC1 | ONSEMI | Description: ONSEMI - NTBG020N120SC1 - SIC MOSFET, N-CH, 20V, 98A, TO-263 tariffCode: 85412900 Drain-Source-Spannung Vds: 1.2 Dauer-Drainstrom Id: 98 hazardous: false usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.7 MOSFET-Modul-Konfiguration: Single euEccn: NLR Verlustleistung: 468 Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 7 Produktpalette: - Kanaltyp: N Channel Rds(on)-Prüfspannung: 20 Betriebstemperatur, max.: 175 Drain-Source-Durchgangswiderstand: 0.02 SVHC: No SVHC (15-Jan-2018) | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTBG020N120SC1 | ONSEMI | Description: ONSEMI - NTBG020N120SC1 - Siliziumkarbid-MOSFET, EliteSiC, Eins, n-Kanal, 98 A, 1.2 kV, 0.02 ohm, TO-263 (D2PAK) tariffCode: 85412900 Drain-Source-Spannung Vds: 1.2kV rohsCompliant: Y-EX Dauer-Drainstrom Id: 98A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.7V MOSFET-Modul-Konfiguration: Eins euEccn: NLR Verlustleistung: 468W Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 7Pin(s) productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 20V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.02ohm | auf Bestellung 690 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| NTBG020N120SC1 | ON Semiconductor | Trans MOSFET N-CH SiC 1.2KV 8.6A 8-Pin(7+Tab) D2PAK T/R | auf Bestellung 3700 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| NTBG020N120SC1 | onsemi | Description: SICFET N-CH 1200V 8.6A/98A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.6A (Ta), 98A (Tc) Rds On (Max) @ Id, Vgs: 28mOhm @ 60A, 20V Power Dissipation (Max): 3.7W (Ta), 468W (Tc) Vgs(th) (Max) @ Id: 4.3V @ 20mA Supplier Device Package: D2PAK-7 Drive Voltage (Max Rds On, Min Rds On): 20V Vgs (Max): +25V, -15V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 2943 pF @ 800 V | auf Bestellung 733 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||||
| NTBG022N120M3S | onsemi | Description: SIC MOSFET 1200 V 22 MOHM M3S SE Packaging: Cut Tape (CT) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 72A (Tc) Rds On (Max) @ Id, Vgs: 30mOhm @ 40A, 18V Power Dissipation (Max): 234W (Tc) Vgs(th) (Max) @ Id: 4.4V @ 20mA Supplier Device Package: D2PAK-7 Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +22V, -10V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 142 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 3175 pF @ 800 V | auf Bestellung 1426 Stücke: Lieferzeit 10-14 Tag (e) |
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| NTBG022N120M3S | ON Semiconductor | SiC MOSFET 1200 V 22 mohm | auf Bestellung 1600 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| NTBG022N120M3S | onsemi | Description: SIC MOSFET 1200 V 22 MOHM M3S SE Packaging: Tape & Reel (TR) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 72A (Tc) Rds On (Max) @ Id, Vgs: 30mOhm @ 40A, 18V Power Dissipation (Max): 234W (Tc) Vgs(th) (Max) @ Id: 4.4V @ 20mA Supplier Device Package: D2PAK-7 Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +22V, -10V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 142 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 3175 pF @ 800 V | auf Bestellung 800 Stücke: Lieferzeit 10-14 Tag (e) |
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| NTBG022N120M3S | onsemi | MOSFET Silicon Carbide (SiC) MOSFET - EliteSiC, 22 mohm, 1200 V, M3S, D2PAK-7L | auf Bestellung 931 Stücke: Lieferzeit 10-14 Tag (e) |
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| NTBG025N065SC1 | onsemi | Description: SILICON CARBIDE (SIC) MOSFET - 1 Packaging: Cut Tape (CT) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 106A (Tc) Rds On (Max) @ Id, Vgs: 28.5mOhm @ 45A, 18V Power Dissipation (Max): 395W (Tc) Vgs(th) (Max) @ Id: 4.3V @ 15.5mA Supplier Device Package: D2PAK-7 Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs (Max): +22V, -8V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 164 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 3480 pF @ 325 V | auf Bestellung 2330 Stücke: Lieferzeit 10-14 Tag (e) |
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| NTBG025N065SC1 | ONSEMI | Description: ONSEMI - NTBG025N065SC1 - Siliziumkarbid-MOSFET, EliteSiC, Eins, n-Kanal, 106 A, 650 V, 0.0285 ohm, TO-263 (D2PAK) tariffCode: 85412900 Drain-Source-Spannung Vds: 650V rohsCompliant: YES Dauer-Drainstrom Id: 106A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.8V MOSFET-Modul-Konfiguration: Eins euEccn: NLR Verlustleistung: 395W Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 7Pins Produktpalette: PW Series productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 18V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0285ohm SVHC: Lead (14-Jun-2023) | auf Bestellung 790 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| NTBG025N065SC1 | onsemi | MOSFET Silicon Carbide (SiC) MOSFET - EliteSiC, 19 mohm, 650 V, M2, D2PAK-7L Silicon Carbide (SiC) MOSFET - 19 mohm, 650 V, M2, D2PAK-7L | auf Bestellung 862 Stücke: Lieferzeit 10-14 Tag (e) |
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| NTBG025N065SC1 | onsemi | Description: SILICON CARBIDE (SIC) MOSFET - 1 Packaging: Tape & Reel (TR) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 106A (Tc) Rds On (Max) @ Id, Vgs: 28.5mOhm @ 45A, 18V Power Dissipation (Max): 395W (Tc) Vgs(th) (Max) @ Id: 4.3V @ 15.5mA Supplier Device Package: D2PAK-7 Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs (Max): +22V, -8V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 164 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 3480 pF @ 325 V | auf Bestellung 1600 Stücke: Lieferzeit 10-14 Tag (e) |
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| NTBG025N065SC1 | ON Semiconductor | Silicon Carbide (SiC) MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTBG025N065SC1 | ONSEMI | Description: ONSEMI - NTBG025N065SC1 - Siliziumkarbid-MOSFET, EliteSiC, Eins, n-Kanal, 106 A, 650 V, 0.0285 ohm, TO-263 (D2PAK) tariffCode: 85412900 Drain-Source-Spannung Vds: 650V rohsCompliant: YES Dauer-Drainstrom Id: 106A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.8V MOSFET-Modul-Konfiguration: Eins euEccn: NLR Verlustleistung: 395W Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 7Pins Produktpalette: PW Series productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 18V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0285ohm SVHC: Lead (14-Jun-2023) | auf Bestellung 790 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| NTBG028N170M1 | onsemi | MOSFET SIC 1700V MOS 28MO IN TO263-7L | auf Bestellung 228 Stücke: Lieferzeit 10-14 Tag (e) |
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| NTBG028N170M1 | ON Semiconductor | SiC MOSFET 1700 V 28 mohm | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTBG028N170M1 | onsemi | Description: SIC MOSFET 1700 V 28 MOHM M1 SER Packaging: Cut Tape (CT) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 71A (Tc) Rds On (Max) @ Id, Vgs: 40mOhm @ 60A, 20V Power Dissipation (Max): 428W (Tc) Vgs(th) (Max) @ Id: 4.3V @ 20mA Supplier Device Package: D2PAK-7 Drive Voltage (Max Rds On, Min Rds On): 20V Vgs (Max): +25V, -15V Drain to Source Voltage (Vdss): 1700 V Gate Charge (Qg) (Max) @ Vgs: 222 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 4160 pF @ 800 V | auf Bestellung 763 Stücke: Lieferzeit 10-14 Tag (e) |
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| NTBG028N170M1 | onsemi | Description: SIC MOSFET 1700 V 28 MOHM M1 SER Packaging: Tape & Reel (TR) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 71A (Tc) Rds On (Max) @ Id, Vgs: 40mOhm @ 60A, 20V Power Dissipation (Max): 428W (Tc) Vgs(th) (Max) @ Id: 4.3V @ 20mA Supplier Device Package: D2PAK-7 Drive Voltage (Max Rds On, Min Rds On): 20V Vgs (Max): +25V, -15V Drain to Source Voltage (Vdss): 1700 V Gate Charge (Qg) (Max) @ Vgs: 222 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 4160 pF @ 800 V | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTBG030N120M3S | onsemi | Description: SILICON CARBIDE (SIC) MOSFET - E Packaging: Tape & Reel (TR) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiC (Silicon Carbide Junction Transistor) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 77A (Tc) Rds On (Max) @ Id, Vgs: 39mOhm @ 30A, 18V Power Dissipation (Max): 348W (Tc) Vgs(th) (Max) @ Id: 4.4V @ 15mA Supplier Device Package: D2PAK-7 Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +22V, -10V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 2430 pF @ 800 V | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTBG030N120M3S | onsemi | Description: SILICON CARBIDE (SIC) MOSFET - E Packaging: Cut Tape (CT) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiC (Silicon Carbide Junction Transistor) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 77A (Tc) Rds On (Max) @ Id, Vgs: 39mOhm @ 30A, 18V Power Dissipation (Max): 348W (Tc) Vgs(th) (Max) @ Id: 4.4V @ 15mA Supplier Device Package: D2PAK-7 Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +22V, -10V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 2430 pF @ 800 V | auf Bestellung 783 Stücke: Lieferzeit 10-14 Tag (e) |
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| NTBG030N120M3S | onsemi | MOSFET Silicon Carbide (SiC) MOSFET - EliteSiC, 29 mohm, 1200 V, M3S, D2PAK-7L | auf Bestellung 964 Stücke: Lieferzeit 10-14 Tag (e) |
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| NTBG030N120M3S | ON Semiconductor | Silicon Carbide (SiC) MOSFET | auf Bestellung 1600 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| NTBG032N065M3S | ON Semiconductor | SiC MOS D2PAK-7L 32mohm 650V M3S | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTBG040N120M3S | ON Semiconductor | Silicon Carbide (SiC) MOSFET | auf Bestellung 800 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| NTBG040N120M3S | onsemi | Description: SILICON CARBIDE (SIC) MOSFET - E Packaging: Tape & Reel (TR) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiC (Silicon Carbide Junction Transistor) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 57A (Tc) Rds On (Max) @ Id, Vgs: 54mOhm @ 20A, 18V Power Dissipation (Max): 263W (Tc) Vgs(th) (Max) @ Id: 4.4V @ 10mA Supplier Device Package: D2PAK-7 Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +22V, -10V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 800 V | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTBG040N120M3S | onsemi | MOSFET Silicon Carbide (SiC) MOSFET - EliteSiC, 40 mohm, 1200 V, M3S, D2PAK-7L Silicon Carbide (SiC) MOSFET - EliteSiC, 40 mohm, 1200 V, M3S, D2PAK-7L | auf Bestellung 263 Stücke: Lieferzeit 10-14 Tag (e) |
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| NTBG040N120M3S | onsemi | Description: SILICON CARBIDE (SIC) MOSFET - E Packaging: Cut Tape (CT) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiC (Silicon Carbide Junction Transistor) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 57A (Tc) Rds On (Max) @ Id, Vgs: 54mOhm @ 20A, 18V Power Dissipation (Max): 263W (Tc) Vgs(th) (Max) @ Id: 4.4V @ 10mA Supplier Device Package: D2PAK-7 Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +22V, -10V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 800 V | auf Bestellung 746 Stücke: Lieferzeit 10-14 Tag (e) |
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| NTBG040N120SC1 | ONSEMI | Description: ONSEMI - NTBG040N120SC1 - Siliziumkarbid-MOSFET, EliteSiC, Eins, n-Kanal, 60 A, 1.2 kV, 0.04 ohm, TO-263HV (D2PAK) tariffCode: 85412900 Drain-Source-Spannung Vds: 1.2kV rohsCompliant: Y-EX Dauer-Drainstrom Id: 60A hazardous: false rohsPhthalatesCompliant: YES MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3V MOSFET-Modul-Konfiguration: Eins euEccn: NLR Verlustleistung: 357W Bauform - Transistor: TO-263HV (D2PAK) Anzahl der Pins: 7Pin(s) Produktpalette: Multicomp Pro RJ45 Adapter productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 20V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.04ohm SVHC: Lead (14-Jun-2023) | auf Bestellung 743 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| NTBG040N120SC1 | onsemi | Description: SICFET N-CH 1200V 60A D2PAK-7 Packaging: Tape & Reel (TR) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 56mOhm @ 35A, 20V Power Dissipation (Max): 357W (Tc) Vgs(th) (Max) @ Id: 4.3V @ 10mA Supplier Device Package: D2PAK-7 Drive Voltage (Max Rds On, Min Rds On): 20V Vgs (Max): +25V, -15V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 1789 pF @ 800 V | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTBG040N120SC1 | ONSEMI | Description: ONSEMI - NTBG040N120SC1 - SIC MOSFET, N-CH, 20V, 60A, TO-263HV tariffCode: 85412900 Drain-Source-Spannung Vds: 1.2 Dauer-Drainstrom Id: 60 hazardous: false usEccn: Unknown Gate-Source-Schwellenspannung, max.: 3 MOSFET-Modul-Konfiguration: Single euEccn: Unknown Verlustleistung: 357 Bauform - Transistor: TO-263HV (D2PAK) Anzahl der Pins: 7 Produktpalette: - Kanaltyp: N Channel Rds(on)-Prüfspannung: 20 Betriebstemperatur, max.: 175 Drain-Source-Durchgangswiderstand: 0.04 SVHC: No SVHC (15-Jan-2018) | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTBG040N120SC1 | ONSEMI | Description: ONSEMI - NTBG040N120SC1 - Siliziumkarbid-MOSFET, EliteSiC, Eins, n-Kanal, 60 A, 1.2 kV, 0.04 ohm, TO-263HV (D2PAK) tariffCode: 85412900 Drain-Source-Spannung Vds: 1.2kV rohsCompliant: Y-EX Dauer-Drainstrom Id: 60A hazardous: false rohsPhthalatesCompliant: YES MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3V MOSFET-Modul-Konfiguration: Eins euEccn: NLR Verlustleistung: 357W Bauform - Transistor: TO-263HV (D2PAK) Anzahl der Pins: 7Pin(s) Produktpalette: Multicomp Pro RJ45 Adapter productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 20V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.04ohm SVHC: Lead (14-Jun-2023) | auf Bestellung 743 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| NTBG040N120SC1 | ON Semiconductor | auf Bestellung 365 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||||
| NTBG040N120SC1 | ON Semiconductor | Trans MOSFET N-CH SiC 1.2KV 60A T/R | auf Bestellung 800 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| NTBG040N120SC1 | onsemi | MOSFET Silicon Carbide (SiC) MOSFET - EliteSiC, 40 mohm, 1200 V, M1, D2PAK-7L Silicon Carbide (SiC) MOSFET - EliteSiC, 40 mohm, 1200 V, M1, D2PAK?7L | auf Bestellung 1714 Stücke: Lieferzeit 10-14 Tag (e) |
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| NTBG040N120SC1 | onsemi | Description: SICFET N-CH 1200V 60A D2PAK-7 Packaging: Cut Tape (CT) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 56mOhm @ 35A, 20V Power Dissipation (Max): 357W (Tc) Vgs(th) (Max) @ Id: 4.3V @ 10mA Supplier Device Package: D2PAK-7 Drive Voltage (Max Rds On, Min Rds On): 20V Vgs (Max): +25V, -15V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 1789 pF @ 800 V | auf Bestellung 205 Stücke: Lieferzeit 10-14 Tag (e) |
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| NTBG045N065SC1 | onsemi | Description: SILICON CARBIDE MOSFET, NCHANNEL Packaging: Cut Tape (CT) Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 62A (Tc) Rds On (Max) @ Id, Vgs: 50mOhm @ 25A, 18V Power Dissipation (Max): 242W (Tc) Vgs(th) (Max) @ Id: 4.3V @ 8mA Supplier Device Package: D2PAK-7 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs (Max): +22V, -8V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1890 pF @ 325 V | auf Bestellung 1578 Stücke: Lieferzeit 10-14 Tag (e) |
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| NTBG045N065SC1 | ONSEMI | Description: ONSEMI - NTBG045N065SC1 - Siliziumkarbid-MOSFET, EliteSiC, Eins, n-Kanal, 62 A, 650 V, 0.031 ohm, TO-263 (D2PAK) tariffCode: 85412900 Drain-Source-Spannung Vds: 650V rohsCompliant: YES Dauer-Drainstrom Id: 62A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.8V MOSFET-Modul-Konfiguration: Eins euEccn: NLR Verlustleistung: 242W Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 7Pin(s) productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 18V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.031ohm | auf Bestellung 704 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| NTBG045N065SC1 | ON Semiconductor | Trans MOSFET N-CH SiC 650V 62A Reel | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTBG045N065SC1 | onsemi | MOSFET Silicon Carbide (SiC) MOSFET - EliteSiC, 31 mohm, 650 V, M2, D2PAK-7L | auf Bestellung 36 Stücke: Lieferzeit 10-14 Tag (e) |
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| NTBG045N065SC1 | onsemi | Description: SILICON CARBIDE MOSFET, NCHANNEL Packaging: Tape & Reel (TR) Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 62A (Tc) Rds On (Max) @ Id, Vgs: 50mOhm @ 25A, 18V Power Dissipation (Max): 242W (Tc) Vgs(th) (Max) @ Id: 4.3V @ 8mA Supplier Device Package: D2PAK-7 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs (Max): +22V, -8V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1890 pF @ 325 V | auf Bestellung 800 Stücke: Lieferzeit 10-14 Tag (e) |
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| NTBG045N065SC1 | ONSEMI | Description: ONSEMI - NTBG045N065SC1 - Siliziumkarbid-MOSFET, EliteSiC, Eins, n-Kanal, 62 A, 650 V, 0.031 ohm, TO-263 (D2PAK) tariffCode: 85412900 Drain-Source-Spannung Vds: 650V rohsCompliant: YES Dauer-Drainstrom Id: 62A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Verlustleistung Pd: 242W Gate-Source-Schwellenspannung, max.: 2.8V MOSFET-Modul-Konfiguration: Eins euEccn: NLR Verlustleistung: 242W Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 7Pin(s) productTraceability: Yes-Date/Lot Code Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Betriebswiderstand, Rds(on): 0.031ohm Rds(on)-Prüfspannung: 18V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.031ohm | auf Bestellung 704 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| NTBG060N065SC1 | onsemi | MOSFET Silicon Carbide (SiC) MOSFET - EliteSiC, 44 mohm, 650 V, M2, D2PAK-7L | auf Bestellung 572 Stücke: Lieferzeit 10-14 Tag (e) |
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| NTBG060N065SC1 | onsemi | Description: SILICON CARBIDE (SIC) MOSFET - 4 Packaging: Cut Tape (CT) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 46A (Tc) Rds On (Max) @ Id, Vgs: 70mOhm @ 20A, 18V Power Dissipation (Max): 170W (Tc) Vgs(th) (Max) @ Id: 4.3V @ 6.5mA Supplier Device Package: D2PAK-7 Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs (Max): +22V, -8V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1473 pF @ 325 V | auf Bestellung 735 Stücke: Lieferzeit 10-14 Tag (e) |
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| NTBG060N065SC1 | onsemi | Description: SILICON CARBIDE (SIC) MOSFET - 4 Packaging: Tape & Reel (TR) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 46A (Tc) Rds On (Max) @ Id, Vgs: 70mOhm @ 20A, 18V Power Dissipation (Max): 170W (Tc) Vgs(th) (Max) @ Id: 4.3V @ 6.5mA Supplier Device Package: D2PAK-7 Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs (Max): +22V, -8V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1473 pF @ 325 V | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTBG060N065SC1 | ON Semiconductor | Silicon Carbide (SiC) MOSFET | auf Bestellung 1600 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| NTBG060N090SC1 | ON Semiconductor | auf Bestellung 295 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||||
| NTBG060N090SC1 | ON Semiconductor | SiC Power, Single N-Channel MOSFET | auf Bestellung 800 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| NTBG060N090SC1 | onsemi | Description: MOSFET N-CH 900V 5.8/44A D2PAK-7 Packaging: Cut Tape (CT) Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta), 44A (Tc) Rds On (Max) @ Id, Vgs: 84mOhm @ 20A, 15V Power Dissipation (Max): 3.6W (Ta), 211W (Tc) Vgs(th) (Max) @ Id: 4.3V @ 5mA Supplier Device Package: D2PAK-7 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): +19V, -10V Drain to Source Voltage (Vdss): 900 V Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 450 V | auf Bestellung 800 Stücke: Lieferzeit 10-14 Tag (e) |
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| NTBG060N090SC1 | onsemi | MOSFET SIC MOS 60MOHM 900V | auf Bestellung 1498 Stücke: Lieferzeit 10-14 Tag (e) |
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| NTBG060N090SC1 | onsemi | Description: MOSFET N-CH 900V 5.8/44A D2PAK-7 Packaging: Tape & Reel (TR) Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta), 44A (Tc) Rds On (Max) @ Id, Vgs: 84mOhm @ 20A, 15V Power Dissipation (Max): 3.6W (Ta), 211W (Tc) Vgs(th) (Max) @ Id: 4.3V @ 5mA Supplier Device Package: D2PAK-7 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): +19V, -10V Drain to Source Voltage (Vdss): 900 V Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 450 V | auf Bestellung 800 Stücke: Lieferzeit 10-14 Tag (e) |
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| NTBG070N120M3S | ON Semiconductor | Trans MOSFET N-CH SiC 1.2KV 36A Automotive 8-Pin(7+Tab) D2PAK T/R | auf Bestellung 800 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| NTBG070N120M3S | onsemi | MOSFET SIC MOS D2PAK-7L 70MOHM 1200V M3 | auf Bestellung 791 Stücke: Lieferzeit 10-14 Tag (e) |
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| NTBG080N120SC1 | ONSEMI | Description: ONSEMI - NTBG080N120SC1 - Siliziumkarbid-MOSFET, EliteSiC, Eins, n-Kanal, 30 A, 1.2 kV, 0.08 ohm, TO-263HV (D2PAK) tariffCode: 85412900 Drain-Source-Spannung Vds: 1.2kV rohsCompliant: Y-EX Dauer-Drainstrom Id: 30A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3V MOSFET-Modul-Konfiguration: Eins euEccn: NLR Verlustleistung: 179W Bauform - Transistor: TO-263HV (D2PAK) Anzahl der Pins: 7Pin(s) productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 20V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.08ohm | auf Bestellung 1633 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| NTBG080N120SC1 | onsemi | Description: SICFET N-CH 1200V 30A D2PAK-7 Packaging: Tape & Reel (TR) Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 110mOhm @ 20A, 20V Power Dissipation (Max): 179W (Tc) Vgs(th) (Max) @ Id: 4.3V @ 5mA Supplier Device Package: D2PAK-7 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 20V Vgs (Max): +25, -15V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 1154 pF @ 800 V | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTBG080N120SC1 | ONSEMI | Description: ONSEMI - NTBG080N120SC1 - SIC MOSFET, N-CH, 20V, 30A, TO-263HV tariffCode: 85412900 Drain-Source-Spannung Vds: 1.2 Dauer-Drainstrom Id: 30 hazardous: false usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3 MOSFET-Modul-Konfiguration: Single euEccn: NLR Verlustleistung: 179 Bauform - Transistor: TO-263HV (D2PAK) Anzahl der Pins: 7 Produktpalette: - Kanaltyp: N Channel Rds(on)-Prüfspannung: 20 Betriebstemperatur, max.: 175 Drain-Source-Durchgangswiderstand: 0.08 SVHC: No SVHC (15-Jan-2018) | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTBG080N120SC1 | ON Semiconductor | Trans MOSFET N-CH SiC 1.2KV 56.4A 8-Pin(7+Tab) D2PAK T/R | auf Bestellung 800 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| NTBG080N120SC1 | onsemi | Description: SICFET N-CH 1200V 30A D2PAK-7 Packaging: Cut Tape (CT) Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 110mOhm @ 20A, 20V Power Dissipation (Max): 179W (Tc) Vgs(th) (Max) @ Id: 4.3V @ 5mA Supplier Device Package: D2PAK-7 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 20V Vgs (Max): +25, -15V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 1154 pF @ 800 V | auf Bestellung 48 Stücke: Lieferzeit 10-14 Tag (e) |
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| NTBG080N120SC1 | onsemi | MOSFET SIC MOS D2PAK-7L 80MOHM 1200V | auf Bestellung 976 Stücke: Lieferzeit 10-14 Tag (e) |
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| NTBG1000N170M1 | onsemi | MOSFET SIC 1700V MOS 1O IN TO263-7L | auf Bestellung 808 Stücke: Lieferzeit 10-14 Tag (e) |
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| NTBG160N120SC1 | onsemi | MOSFET SIC MOS D2PAK-7L 160MOHM 1200V | auf Bestellung 1385 Stücke: Lieferzeit 10-14 Tag (e) |
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| NTBG160N120SC1 | ONSEMI | Description: ONSEMI - NTBG160N120SC1 - Siliziumkarbid-MOSFET, EliteSiC, Eins, n-Kanal, 19.5 A, 1.2 kV, 0.16 ohm, TO-263HV (D2PAK) tariffCode: 85412900 Drain-Source-Spannung Vds: 1.2kV rohsCompliant: Y-EX Dauer-Drainstrom Id: 19.5A hazardous: false rohsPhthalatesCompliant: YES MSL: MSL 1 - unbegrenzt usEccn: EAR99 Verlustleistung Pd: 136W Gate-Source-Schwellenspannung, max.: 3V MOSFET-Modul-Konfiguration: Eins euEccn: NLR Verlustleistung: 136W Bauform - Transistor: TO-263HV (D2PAK) Anzahl der Pins: 7Pin(s) Produktpalette: Multicomp Pro RJ45 Adapter productTraceability: Yes-Date/Lot Code Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Betriebswiderstand, Rds(on): 0.16ohm Rds(on)-Prüfspannung: 20V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.16ohm SVHC: Lead (14-Jun-2023) | auf Bestellung 522 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| NTBG160N120SC1 | ON Semiconductor | Trans MOSFET N-CH SiC 1.2KV 31A 8-Pin(7+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTBG160N120SC1 | onsemi | Description: SICFET N-CH 1200V 19.5A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19.5A (Tc) Rds On (Max) @ Id, Vgs: 224mOhm @ 12A, 20V Power Dissipation (Max): 136W (Tc) Vgs(th) (Max) @ Id: 4.3V @ 2.5mA Supplier Device Package: D2PAK-7 Drive Voltage (Max Rds On, Min Rds On): 20V Vgs (Max): +25V, -15V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 33.8 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 678 pF @ 800 V | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTBG160N120SC1 | ONSEMI | Description: ONSEMI - NTBG160N120SC1 - SIC MOSFET, N-CH, 20V, 19.5A, TO-263HV tariffCode: 85412900 Drain-Source-Spannung Vds: 1.2 Dauer-Drainstrom Id: 19.5 hazardous: false usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3 MOSFET-Modul-Konfiguration: Single euEccn: NLR Verlustleistung: 136 Bauform - Transistor: TO-263HV (D2PAK) Anzahl der Pins: 7 Produktpalette: - Kanaltyp: N Channel Rds(on)-Prüfspannung: 20 Betriebstemperatur, max.: 175 Drain-Source-Durchgangswiderstand: 0.16 SVHC: No SVHC (15-Jan-2018) | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTBG160N120SC1 | ONSEMI | Description: ONSEMI - NTBG160N120SC1 - Siliziumkarbid-MOSFET, EliteSiC, Eins, n-Kanal, 19.5 A, 1.2 kV, 0.16 ohm, TO-263HV (D2PAK) tariffCode: 85412900 Drain-Source-Spannung Vds: 1.2kV rohsCompliant: Y-EX Dauer-Drainstrom Id: 19.5A hazardous: false rohsPhthalatesCompliant: YES MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3V MOSFET-Modul-Konfiguration: Eins euEccn: NLR Verlustleistung: 136W Bauform - Transistor: TO-263HV (D2PAK) Anzahl der Pins: 7Pin(s) Produktpalette: Multicomp Pro RJ45 Adapter productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 20V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.16ohm SVHC: Lead (14-Jun-2023) | auf Bestellung 522 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| NTBG160N120SC1 | ON Semiconductor | auf Bestellung 540 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||||
| NTBG160N120SC1 | onsemi | Description: SICFET N-CH 1200V 19.5A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19.5A (Tc) Rds On (Max) @ Id, Vgs: 224mOhm @ 12A, 20V Power Dissipation (Max): 136W (Tc) Vgs(th) (Max) @ Id: 4.3V @ 2.5mA Supplier Device Package: D2PAK-7 Drive Voltage (Max Rds On, Min Rds On): 20V Vgs (Max): +25V, -15V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 33.8 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 678 pF @ 800 V | auf Bestellung 423 Stücke: Lieferzeit 10-14 Tag (e) |
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| NTBGS001N06C | onsemi | Description: POWER MOSFET, 60 V, 1.1 M?, 342 Packaging: Cut Tape (CT) Package / Case: TO-263-7, D²Pak (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 42A (Ta), 342A (Tc) Rds On (Max) @ Id, Vgs: 1.1mOhm @ 112A, 12V Power Dissipation (Max): 3.7W (Ta), 245W (Tc) Vgs(th) (Max) @ Id: 4V @ 562µA Supplier Device Package: D2PAK (TO-263) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V, 12V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 139 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11110 pF @ 30 V | auf Bestellung 670 Stücke: Lieferzeit 10-14 Tag (e) |
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| NTBGS001N06C | ONSEMI | Description: ONSEMI - NTBGS001N06C - Leistungs-MOSFET, n-Kanal, 60 V, 342 A, 0.00089 ohm, TO-263 (D2PAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 60V rohsCompliant: Y-EX Dauer-Drainstrom Id: 342A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Verlustleistung Pd: 245W Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 245W Bauform - Transistor: TO-263 (D2PAK) Qualifizierungsstandard der Automobilindustrie: - Anzahl der Pins: 7Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Betriebswiderstand, Rds(on): 890µohm Rds(on)-Prüfspannung: 12V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 890µohm SVHC: Lead (14-Jun-2023) | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTBGS001N06C | onsemi | Description: POWER MOSFET, 60 V, 1.1 M?, 342 Packaging: Tape & Reel (TR) Package / Case: TO-263-7, D²Pak (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 42A (Ta), 342A (Tc) Rds On (Max) @ Id, Vgs: 1.1mOhm @ 112A, 12V Power Dissipation (Max): 3.7W (Ta), 245W (Tc) Vgs(th) (Max) @ Id: 4V @ 562µA Supplier Device Package: D2PAK (TO-263) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V, 12V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 139 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11110 pF @ 30 V | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTBGS001N06C | onsemi | MOSFET NFET D2PAK7 60V 1.0MO | auf Bestellung 1600 Stücke: Lieferzeit 297-301 Tag (e) |
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| NTBGS001N06C | ON Semiconductor | Trans MOSFET N-CH 60V 42A 7-Pin(6+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTBGS001N06C | ONSEMI | Description: ONSEMI - NTBGS001N06C - Leistungs-MOSFET, n-Kanal, 60 V, 342 A, 0.00089 ohm, TO-263 (D2PAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 60V rohsCompliant: Y-EX Dauer-Drainstrom Id: 342A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Verlustleistung Pd: 245W Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 245W Bauform - Transistor: TO-263 (D2PAK) Qualifizierungsstandard der Automobilindustrie: - Anzahl der Pins: 7Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Betriebswiderstand, Rds(on): 890µohm Rds(on)-Prüfspannung: 12V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 890µohm SVHC: Lead (14-Jun-2023) | auf Bestellung 790 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| NTBGS002N06C | onsemi | MOSFET Power MOSFET, 60 V, 2.2 m?, 211 A, Single N-Channel, D2PAK7 Power MOSFET, 60 V, 2.0 m?, 252 A, Single N-Channel, D2PAK7 | auf Bestellung 800 Stücke: Lieferzeit 374-378 Tag (e) |
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| NTBGS002N06C | onsemi | Description: POWER MOSFET, 60 V, 2.2 M?, 211 Packaging: Cut Tape (CT) Package / Case: TO-263-7, D²Pak (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 211A (Tc) Rds On (Max) @ Id, Vgs: 2.1mOhm @ 45A, 12V Power Dissipation (Max): 3.7W (Ta), 178W (Tc) Vgs(th) (Max) @ Id: 4V @ 225µA Supplier Device Package: D2PAK (TO-263) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V, 12V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 62.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4620 pF @ 30 V | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTBGS002N06C | ON Semiconductor | Trans MOSFET N-CH 60V 30A 7-Pin(6+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTBGS002N06C | onsemi | Description: POWER MOSFET, 60 V, 2.2 M?, 211 Packaging: Tape & Reel (TR) Package / Case: TO-263-7, D²Pak (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 211A (Tc) Rds On (Max) @ Id, Vgs: 2.1mOhm @ 45A, 12V Power Dissipation (Max): 3.7W (Ta), 178W (Tc) Vgs(th) (Max) @ Id: 4V @ 225µA Supplier Device Package: D2PAK (TO-263) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V, 12V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 62.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4620 pF @ 30 V | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTBGS004N10G | ON Semiconductor | Trans MOSFET N-CH 100V 21A T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTBGS004N10G | ONSEMI | Description: ONSEMI - NTBGS004N10G - Leistungs-MOSFET, n-Kanal, 100 V, 203 A, 0.003 ohm, TO-263 (D2PAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 203A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Verlustleistung Pd: 340W Gate-Source-Schwellenspannung, max.: 4V euEccn: NLR Verlustleistung: 340W Bauform - Transistor: TO-263 (D2PAK) Qualifizierungsstandard der Automobilindustrie: - Anzahl der Pins: 7Pin(s) Produktpalette: Multicomp Pro RJ45 Adapter productTraceability: Yes-Date/Lot Code Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Betriebswiderstand, Rds(on): 0.003ohm Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.003ohm | auf Bestellung 1598 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| NTBGS004N10G | onsemi | MOSFET 100V MVSOA IN D2PAK-7L PACKAGE | auf Bestellung 2375 Stücke: Lieferzeit 10-14 Tag (e) |
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| NTBGS004N10G | onsemi | Description: POWER MOSFET 203 AMPS, 100 VOLTS Packaging: Cut Tape (CT) Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 203A (Tc) Rds On (Max) @ Id, Vgs: 4.1mOhm @ 100A, 10V Power Dissipation (Max): 3.7W (Ta), 340W (Tc) Vgs(th) (Max) @ Id: 4V @ 500µA Supplier Device Package: TO-263 (D2Pak) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 178 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12100 pF @ 50 V | auf Bestellung 693 Stücke: Lieferzeit 10-14 Tag (e) |
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| NTBGS004N10G | ONSEMI | Description: ONSEMI - NTBGS004N10G - Leistungs-MOSFET, n-Kanal, 100 V, 203 A, 0.003 ohm, TO-263 (D2PAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 203A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4V euEccn: NLR Verlustleistung: 340W Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 7Pin(s) Produktpalette: Multicomp Pro RJ45 Adapter productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.003ohm | auf Bestellung 1598 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| NTBGS004N10G | ON Semiconductor | MOSFET 100V MVSOA IN D2PAK-7L PACKAGE | auf Bestellung 800 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||||
| NTBGS004N10G | onsemi | Description: POWER MOSFET 203 AMPS, 100 VOLTS Packaging: Tape & Reel (TR) Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 203A (Tc) Rds On (Max) @ Id, Vgs: 4.1mOhm @ 100A, 10V Power Dissipation (Max): 3.7W (Ta), 340W (Tc) Vgs(th) (Max) @ Id: 4V @ 500µA Supplier Device Package: TO-263 (D2Pak) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 178 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12100 pF @ 50 V | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTBGS1D2N08H | ON Semiconductor | Power MOSFET, Single N-Channel | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTBGS1D5N06C | onsemi | MOSFET Power MOSFET, 60 V, 1.62 m?, 267 A, Single N-Channel, D2PAK7 Power MOSFET, 60 V, 1.5 m?, 294 A, Single N-Channel, D2PAK7 | auf Bestellung 3680 Stücke: Lieferzeit 10-14 Tag (e) |
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| NTBGS1D5N06C | onsemi | Description: POWER MOSFET, 60 V, 1.62 M?, 267 Packaging: Tape & Reel (TR) Package / Case: TO-263-7, D²Pak (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 267A (Tc) Rds On (Max) @ Id, Vgs: 1.55mOhm @ 64A, 12V Power Dissipation (Max): 3.7W (Ta), 211W (Tc) Vgs(th) (Max) @ Id: 4V @ 318µA Supplier Device Package: D2PAK (TO-263) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V, 12V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 78.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6250 pF @ 30 V | auf Bestellung 9100 Stücke: Lieferzeit 10-14 Tag (e) |
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| NTBGS1D5N06C | onsemi | Description: POWER MOSFET, 60 V, 1.62 M?, 267 Packaging: Cut Tape (CT) Package / Case: TO-263-7, D²Pak (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 267A (Tc) Rds On (Max) @ Id, Vgs: 1.55mOhm @ 64A, 12V Power Dissipation (Max): 3.7W (Ta), 211W (Tc) Vgs(th) (Max) @ Id: 4V @ 318µA Supplier Device Package: D2PAK (TO-263) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V, 12V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 78.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6250 pF @ 30 V | auf Bestellung 9100 Stücke: Lieferzeit 10-14 Tag (e) |
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| NTBGS2D5N06C | ON Semiconductor | Trans MOSFET N-CH 60V 27A 7-Pin(6+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTBGS2D5N06C | onsemi | Description: POWER MOSFET, 60 V, 2.5 M?, 224 Packaging: Tape & Reel (TR) Package / Case: TO-263-7, D²Pak (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 169A (Tc) Rds On (Max) @ Id, Vgs: 2.5mOhm @ 35A, 12V Power Dissipation (Max): 3.7W (Ta), 136W (Tc) Vgs(th) (Max) @ Id: 4V @ 175µA Supplier Device Package: D2PAK (TO-263) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V, 12V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 45.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3510 pF @ 30 V | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTBGS2D5N06C | onsemi | MOSFET NFET D2PAK7 60V 2.5MO | auf Bestellung 796 Stücke: Lieferzeit 10-14 Tag (e) |
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| NTBGS2D5N06C | onsemi | Description: POWER MOSFET, 60 V, 2.5 M?, 224 Packaging: Cut Tape (CT) Package / Case: TO-263-7, D²Pak (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 169A (Tc) Rds On (Max) @ Id, Vgs: 2.5mOhm @ 35A, 12V Power Dissipation (Max): 3.7W (Ta), 136W (Tc) Vgs(th) (Max) @ Id: 4V @ 175µA Supplier Device Package: D2PAK (TO-263) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V, 12V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 45.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3510 pF @ 30 V | auf Bestellung 796 Stücke: Lieferzeit 10-14 Tag (e) |
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| NTBGS3D5N06C | onsemi | Description: POWER MOSFET, 60 V, 3.7 M?, 127A Packaging: Cut Tape (CT) Package / Case: TO-263-7, D²Pak (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 127A (Tc) Rds On (Max) @ Id, Vgs: 3.7mOhm @ 24A, 12V Power Dissipation (Max): 3.7W (Ta), 115W (Tc) Vgs(th) (Max) @ Id: 4V @ 122µA Supplier Device Package: D2PAK-7 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V, 12V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2430 pF @ 30 V | auf Bestellung 142 Stücke: Lieferzeit 10-14 Tag (e) |
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| NTBGS3D5N06C | onsemi | MOSFET NFET D2PAK7 60V 3.5MO | auf Bestellung 682 Stücke: Lieferzeit 10-14 Tag (e) |
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| NTBGS3D5N06C | ONSEMI | Description: ONSEMI - NTBGS3D5N06C - Leistungs-MOSFET, n-Kanal, 60 V, 127 A, 0.0031 ohm, TO-263 (D2PAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 60V rohsCompliant: YES Dauer-Drainstrom Id: 127A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Verlustleistung Pd: 115W Gate-Source-Schwellenspannung, max.: 4V euEccn: NLR Verlustleistung: 115W Bauform - Transistor: TO-263 (D2PAK) Qualifizierungsstandard der Automobilindustrie: - Anzahl der Pins: 7Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Betriebswiderstand, Rds(on): 0.0031ohm Rds(on)-Prüfspannung: 12V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0031ohm SVHC: No SVHC (14-Jun-2023) | auf Bestellung 417 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| NTBGS3D5N06C | onsemi | Description: POWER MOSFET, 60 V, 3.7 M?, 127A Packaging: Tape & Reel (TR) Package / Case: TO-263-7, D²Pak (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 127A (Tc) Rds On (Max) @ Id, Vgs: 3.7mOhm @ 24A, 12V Power Dissipation (Max): 3.7W (Ta), 115W (Tc) Vgs(th) (Max) @ Id: 4V @ 122µA Supplier Device Package: D2PAK-7 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V, 12V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2430 pF @ 30 V | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTBGS3D5N06C | ONSEMI | Description: ONSEMI - NTBGS3D5N06C - Leistungs-MOSFET, n-Kanal, 60 V, 127 A, 0.0031 ohm, TO-263 (D2PAK), Oberflächenmontage tariffCode: 85412900 Drain-Source-Spannung Vds: 60V rohsCompliant: YES Dauer-Drainstrom Id: 127A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4V euEccn: NLR Verlustleistung: 115W Anzahl der Pins: 7Pin(s) productTraceability: Yes-Date/Lot Code Rds(on)-Prüfspannung: 12V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0031ohm | auf Bestellung 417 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| NTBGS3D5N06C | ON Semiconductor | Trans MOSFET N-CH 60V 22A 7-Pin(6+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTBGS4D1N15MC | ON Semiconductor | Description: POWER MOSFET, 150 V, 4.1 M, 185A | auf Bestellung 102391 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||||
| NTBGS4D1N15MC | ON Semiconductor | Trans MOSFET N-CH 150V 20A 7-Pin(6+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTBGS4D1N15MC | ON Semiconductor | auf Bestellung 230 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||||
| NTBGS4D1N15MC | ON Semiconductor | Description: POWER MOSFET, 150 V, 4.1 M, 185A | auf Bestellung 101600 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||||
| NTBGS4D1N15MC | onsemi | MOSFET PTNG 150V IN SUZHOU D2PAK7L FOR INDUSTRIAL | auf Bestellung 428 Stücke: Lieferzeit 10-14 Tag (e) |
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| NTBGS6D5N15MC | ON Semiconductor | auf Bestellung 770 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||||
| NTBGS6D5N15MC | onsemi | Description: MOSFET N-CH 150V 15A/121A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-7, D²Pak (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 121A (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 69A, 10V Power Dissipation (Max): 3.7W (Ta), 238W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 379µA Supplier Device Package: D2PAK (TO-263) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4745 pF @ 75 V | auf Bestellung 12530 Stücke: Lieferzeit 10-14 Tag (e) |
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| NTBGS6D5N15MC | onsemi | MOSFET PTNG 150V IN SUZHOU D2PAK7L FOR INDUSTRIAL | auf Bestellung 703 Stücke: Lieferzeit 10-14 Tag (e) |
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| NTBGS6D5N15MC | ONSEMI | Description: ONSEMI - NTBGS6D5N15MC - Leistungs-MOSFET, n-Kanal, 150 V, 121 A, 0.0055 ohm, TO-263 (D2PAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 150V rohsCompliant: YES Dauer-Drainstrom Id: 121A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3.5V euEccn: NLR Verlustleistung: 238W Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 7Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0055ohm SVHC: No SVHC (14-Jun-2023) | auf Bestellung 1040 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| NTBGS6D5N15MC | onsemi | Description: MOSFET N-CH 150V 15A/121A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-7, D²Pak (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 121A (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 69A, 10V Power Dissipation (Max): 3.7W (Ta), 238W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 379µA Supplier Device Package: D2PAK (TO-263) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4745 pF @ 75 V | auf Bestellung 12000 Stücke: Lieferzeit 10-14 Tag (e) |
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| NTBGS6D5N15MC | ONSEMI | Description: ONSEMI - NTBGS6D5N15MC - Leistungs-MOSFET, n-Kanal, 150 V, 121 A, 0.0055 ohm, TO-263 (D2PAK), Oberflächenmontage tariffCode: 85412900 Drain-Source-Spannung Vds: 150V rohsCompliant: YES Dauer-Drainstrom Id: 121A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3.5V euEccn: NLR Verlustleistung: 238W Anzahl der Pins: 7Pin(s) productTraceability: Yes-Date/Lot Code Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0055ohm | auf Bestellung 1040 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| NTBGS6D5N15MC | ON Semiconductor | Trans MOSFET N-CH 150V 15A 7-Pin(6+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTBKBAG156 | STARTECH | Description: STARTECH - NTBKBAG156 - Laptop-Rucksack, 1680d ballistisches Nylon, 324mm x 203mm x 425mm, schwarz tariffCode: 42021110 Außentiefe - metrisch: 324mm Außentiefe - imperial: 12.8" productTraceability: No Außenbreite - metrisch: 203mm rohsCompliant: TBA Außenhöhe - metrisch: 425mm Außenhöhe - imperial: 16.7" euEccn: NLR hazardous: false rohsPhthalatesCompliant: TBA Außenbreite - Zoll: 8" usEccn: EAR99 Produktpalette: Multicomp Pro Driver Bit | auf Bestellung 5 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| NTBL045N065SC1 | onsemi | Description: SILICON CARBIDE (SIC) MOSFET - 3 Packaging: Tape & Reel (TR) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 73A (Tc) Rds On (Max) @ Id, Vgs: 50mOhm @ 25A, 18V Power Dissipation (Max): 348W (Tc) Vgs(th) (Max) @ Id: 4.3V @ 8mA Supplier Device Package: 8-HPSOF Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs (Max): +22V, -8V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1870 pF @ 325 V | auf Bestellung 1964 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||||
| NTBL045N065SC1 | onsemi | MOSFET Silicon Carbide (SiC) MOSFET - EliteSiC, 33 mohm, 650 V, M2, TOLL Silicon Carbide (SiC) MOSFET - 33 mohm, 650 V, M2, TOLL | auf Bestellung 1695 Stücke: Lieferzeit 10-14 Tag (e) |
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| NTBL045N065SC1 | ONSEMI | Description: ONSEMI - NTBL045N065SC1 - Siliziumkarbid-MOSFET, EliteSiC, Eins, n-Kanal, 73 A, 650 V, 0.05 ohm, H-PSOF tariffCode: 85412900 Drain-Source-Spannung Vds: 650V rohsCompliant: YES Dauer-Drainstrom Id: 73A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.8V MOSFET-Modul-Konfiguration: Eins euEccn: NLR Verlustleistung: 348W Bauform - Transistor: H-PSOF Anzahl der Pins: 8Pins Produktpalette: PW Series productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 18V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.05ohm SVHC: Lead (14-Jun-2023) | auf Bestellung 2000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| NTBL045N065SC1 | ON Semiconductor | Trans MOSFET N-CH SiC 650V 73A 9-Pin(8+Tab) HPSOF EP T/R | auf Bestellung 2000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| NTBL045N065SC1 | onsemi | Description: SILICON CARBIDE (SIC) MOSFET - 3 Packaging: Cut Tape (CT) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 73A (Tc) Rds On (Max) @ Id, Vgs: 50mOhm @ 25A, 18V Power Dissipation (Max): 348W (Tc) Vgs(th) (Max) @ Id: 4.3V @ 8mA Supplier Device Package: 8-HPSOF Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs (Max): +22V, -8V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1870 pF @ 325 V | auf Bestellung 1964 Stücke: Lieferzeit 10-14 Tag (e) |
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| NTBL045N065SC1 | ONSEMI | Description: ONSEMI - NTBL045N065SC1 - Siliziumkarbid-MOSFET, EliteSiC, Eins, n-Kanal, 73 A, 650 V, 0.05 ohm, H-PSOF tariffCode: 85412900 Drain-Source-Spannung Vds: 650V rohsCompliant: YES Dauer-Drainstrom Id: 73A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.8V MOSFET-Modul-Konfiguration: Eins euEccn: NLR Verlustleistung: 348W Bauform - Transistor: H-PSOF Anzahl der Pins: 8Pins Produktpalette: PW Series productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 18V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.05ohm SVHC: Lead (14-Jun-2023) | auf Bestellung 2000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| NTBL050N65S3H | ON Semiconductor | Trans MOSFET N-CH 650V 49A T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTBL050N65S3H | onsemi | Description: MOSFET - POWER,NCHANNEL, SUPERFE Packaging: Tape & Reel (TR) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 49A (Tc) Rds On (Max) @ Id, Vgs: 50mOhm @ 24.5A, 10V Power Dissipation (Max): 305W (Tc) Vgs(th) (Max) @ Id: 4V @ 4.8mA Supplier Device Package: 8-HPSOF Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4880 pF @ 400 V | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTBL050N65S3H | ONSEMI | Description: ONSEMI - NTBL050N65S3H - Leistungs-MOSFET, n-Kanal, 650 V, 49 A, 0.0425 ohm, H-PSOF, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 650V rohsCompliant: Y-EX Dauer-Drainstrom Id: 49A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Verlustleistung Pd: 305W Gate-Source-Schwellenspannung, max.: 4V euEccn: NLR Verlustleistung: 305W Bauform - Transistor: H-PSOF Qualifizierungsstandard der Automobilindustrie: - Anzahl der Pins: 8Pins Produktpalette: SUPERFET III productTraceability: Yes-Date/Lot Code Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Betriebswiderstand, Rds(on): 0.0425ohm Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.0425ohm SVHC: Lead (14-Jun-2023) | auf Bestellung 1801 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| NTBL050N65S3H | onsemi | MOSFET MOSFET - Power, N-Channel, SUPERFET III, FAST, 650 V, 49 A, 50 mohm, TOLL MOSFET - Power, N-Channel, SUPERFET III, FAST, 650 V, 49 A, 50 mohm | auf Bestellung 1950 Stücke: Lieferzeit 10-14 Tag (e) |
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| NTBL050N65S3H | onsemi | Description: MOSFET - POWER,NCHANNEL, SUPERFE Packaging: Cut Tape (CT) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 49A (Tc) Rds On (Max) @ Id, Vgs: 50mOhm @ 24.5A, 10V Power Dissipation (Max): 305W (Tc) Vgs(th) (Max) @ Id: 4V @ 4.8mA Supplier Device Package: 8-HPSOF Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4880 pF @ 400 V | auf Bestellung 1850 Stücke: Lieferzeit 10-14 Tag (e) |
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| NTBL050N65S3H | ONSEMI | Description: ONSEMI - NTBL050N65S3H - Leistungs-MOSFET, n-Kanal, 650 V, 49 A, 0.0425 ohm, H-PSOF, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 650V rohsCompliant: Y-EX Dauer-Drainstrom Id: 49A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4V euEccn: NLR Verlustleistung: 305W Bauform - Transistor: H-PSOF Anzahl der Pins: 8Pins Produktpalette: SUPERFET III productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.0425ohm SVHC: Lead (14-Jun-2023) | auf Bestellung 1801 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| NTBL060N065SC1 | onsemi | onsemi Silicon Carbide (SiC) MOSFET - EliteSiC, 44 mohm, 650 V, M2, TOLL Silicon Carbide (SiC) MOSFET - EliteSiC, 44 mohm, 650 V, M2, TOLL | auf Bestellung 2000 Stücke: Lieferzeit 115-119 Tag (e) |
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| NTBL070N65S3 | onsemi | Description: SF3 650V EASY 70MOHM KELVIN SENS Packaging: Tape & Reel (TR) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 44A (Tc) Rds On (Max) @ Id, Vgs: 70mOhm @ 22A, 10V Power Dissipation (Max): 312W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 1mA Supplier Device Package: 8-HPSOF Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 400 V | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTBL070N65S3 | ON Semiconductor | Power MOSFET, N-Channel | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTBL070N65S3 | onsemi | MOSFET Power MOSFET, N-Channel, SUPERFET III, Easy Drive, 650 V, 44 A, 70 mohm, TOLL | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTBL070N65S3 | onsemi | Description: SF3 650V EASY 70MOHM KELVIN SENS Packaging: Cut Tape (CT) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 44A (Tc) Rds On (Max) @ Id, Vgs: 70mOhm @ 22A, 10V Power Dissipation (Max): 312W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 1mA Supplier Device Package: 8-HPSOF Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 400 V | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTBL075N065SC1 | onsemi | onsemi M2 650V SIC MOSFET 75MOHM WITH TOLL | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTBL082N65S3HF | onsemi | MOSFET SF3 650V FRFET HF 82MOHM KELVIN SENSE TOLL | auf Bestellung 1992 Stücke: Lieferzeit 10-14 Tag (e) |
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| NTBL082N65S3HF | ONSEMI | Description: ONSEMI - NTBL082N65S3HF - Leistungs-MOSFET, n-Kanal, 650 V, 40 A, 0.07 ohm, H-PSOF, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 650V rohsCompliant: YES Dauer-Drainstrom Id: 40A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 5V euEccn: NLR Verlustleistung: 313W Bauform - Transistor: H-PSOF Anzahl der Pins: 8Pins Produktpalette: SUPERFET III FRFET productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.07ohm SVHC: Lead (14-Jun-2023) | auf Bestellung 1990 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| NTBL082N65S3HF | onsemi | Description: NTBL082N65S3HF Packaging: Cut Tape (CT) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 82mOhm @ 20A, 10V Power Dissipation (Max): 313W (Tc) Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: 8-HPSOF Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3330 pF @ 400 V | auf Bestellung 1992 Stücke: Lieferzeit 10-14 Tag (e) |
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| NTBL082N65S3HF | onsemi | Description: NTBL082N65S3HF Packaging: Tape & Reel (TR) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 82mOhm @ 20A, 10V Power Dissipation (Max): 313W (Tc) Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: 8-HPSOF Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3330 pF @ 400 V | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTBL082N65S3HF | ONSEMI | Description: ONSEMI - NTBL082N65S3HF - Leistungs-MOSFET, n-Kanal, 650 V, 40 A, 0.07 ohm, H-PSOF, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 650V rohsCompliant: YES Dauer-Drainstrom Id: 40A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Verlustleistung Pd: 313W Gate-Source-Schwellenspannung, max.: 5V euEccn: NLR Verlustleistung: 313W Bauform - Transistor: H-PSOF Qualifizierungsstandard der Automobilindustrie: - Anzahl der Pins: 8Pins Produktpalette: SUPERFET III FRFET productTraceability: Yes-Date/Lot Code Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Betriebswiderstand, Rds(on): 0.07ohm Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.07ohm SVHC: Lead (14-Jun-2023) | auf Bestellung 1990 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| NTBL095N65S3H | onsemi | Description: SUPERFET3 FAST 95MOHM TOLL | auf Bestellung 8000 Stücke: Lieferzeit 10-14 Tag (e) |
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| NTBLS001N06C | ON Semiconductor | Power MOSFET 60 V, 1 mW, 297 A, Single N-Channel, TOLL | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTBLS001N06C | onsemi | Description: MOSFET N-CH 60V 51A/422A 8HPSOF Packaging: Tape & Reel (TR) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 51A (Ta), 422A (Tc) Rds On (Max) @ Id, Vgs: 0.9mOhm @ 80A, 10V Power Dissipation (Max): 4.2W (Ta), 284W (Tc) Vgs(th) (Max) @ Id: 4V @ 562µA Supplier Device Package: 8-HPSOF Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11575 pF @ 30 V | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTBLS001N06C | onsemi | MOSFET NFET TOLL 60V 1.0MO | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTBLS001N06C | ON Semiconductor | auf Bestellung 1980 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||||
| NTBLS001N06C | onsemi | Description: MOSFET N-CH 60V 51A/422A 8HPSOF Packaging: Cut Tape (CT) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 51A (Ta), 422A (Tc) Rds On (Max) @ Id, Vgs: 0.9mOhm @ 80A, 10V Power Dissipation (Max): 4.2W (Ta), 284W (Tc) Vgs(th) (Max) @ Id: 4V @ 562µA Supplier Device Package: 8-HPSOF Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11575 pF @ 30 V | auf Bestellung 1764 Stücke: Lieferzeit 10-14 Tag (e) |
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| NTBLS002N08MC | onsemi | Description: MOSFET N-CH 80V 28A/238A 8HPSOF Packaging: Cut Tape (CT) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 238A (Tc) Rds On (Max) @ Id, Vgs: 2mOhm @ 80A, 10V Power Dissipation (Max): 2.9W (Ta), 208W (Tc) Vgs(th) (Max) @ Id: 4V @ 530µA Supplier Device Package: 8-HPSOF Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6580 pF @ 40 V | auf Bestellung 2000 Stücke: Lieferzeit 10-14 Tag (e) |
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| NTBLS002N08MC | onsemi | MOSFET PTNG 80V | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTBLS002N08MC | onsemi | Description: MOSFET N-CH 80V 28A/238A 8HPSOF Packaging: Tape & Reel (TR) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 238A (Tc) Rds On (Max) @ Id, Vgs: 2mOhm @ 80A, 10V Power Dissipation (Max): 2.9W (Ta), 208W (Tc) Vgs(th) (Max) @ Id: 4V @ 530µA Supplier Device Package: 8-HPSOF Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6580 pF @ 40 V | auf Bestellung 2000 Stücke: Lieferzeit 10-14 Tag (e) |
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| NTBLS002N08MC | ON Semiconductor | N-Channel Power MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTBLS0D7N06C | ON Semiconductor | auf Bestellung 1965 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||||
| NTBLS0D7N06C | ONSEMI | Description: ONSEMI - NTBLS0D7N06C - Leistungs-MOSFET, n-Kanal, 60 V, 470 A, 560 µohm, H-PSOF, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 60V rohsCompliant: Y-EX Dauer-Drainstrom Id: 470A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.8V euEccn: NLR Verlustleistung: 314W Bauform - Transistor: H-PSOF Anzahl der Pins: 8Pin(s) Produktpalette: Multicomp Pro RJ45 Adapter productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 560µohm | auf Bestellung 1790 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| NTBLS0D7N06C | onsemi | Description: MOSFET N-CH 60V 54A/470A 8HPSOF Packaging: Cut Tape (CT) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 54A (Ta), 470A (Tc) Rds On (Max) @ Id, Vgs: 0.75mOhm @ 80A, 10V Power Dissipation (Max): 4.2W (Ta), 314W (Tc) Vgs(th) (Max) @ Id: 4V @ 661µA Supplier Device Package: 8-HPSOF Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 13730 pF @ 30 V | auf Bestellung 1041 Stücke: Lieferzeit 10-14 Tag (e) |
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| NTBLS0D7N06C | onsemi | Description: MOSFET N-CH 60V 54A/470A 8HPSOF Packaging: Tape & Reel (TR) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 54A (Ta), 470A (Tc) Rds On (Max) @ Id, Vgs: 0.75mOhm @ 80A, 10V Power Dissipation (Max): 4.2W (Ta), 314W (Tc) Vgs(th) (Max) @ Id: 4V @ 661µA Supplier Device Package: 8-HPSOF Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 13730 pF @ 30 V | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTBLS0D7N06C | onsemi | MOSFET NFET TOLL 60V 0.75MO | auf Bestellung 1826 Stücke: Lieferzeit 10-14 Tag (e) |
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| NTBLS0D7N06C | ONSEMI | Description: ONSEMI - NTBLS0D7N06C - Leistungs-MOSFET, n-Kanal, 60 V, 470 A, 560 µohm, H-PSOF, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 60V rohsCompliant: Y-EX Dauer-Drainstrom Id: 470A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.8V euEccn: NLR Verlustleistung: 314W Bauform - Transistor: H-PSOF Anzahl der Pins: 8Pin(s) Produktpalette: Multicomp Pro RJ45 Adapter productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 560µohm | auf Bestellung 1790 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| NTBLS0D8N08XTXG | onsemi | MOSFET MOSFET, Power 80V Single N-Channel | auf Bestellung 2671 Stücke: Lieferzeit 10-14 Tag (e) |
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| NTBLS0D8N08XTXG | onsemi | Description: MOSFET, POWER 80V SINGLE N-CHANN Packaging: Cut Tape (CT) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 457A (Tc) Rds On (Max) @ Id, Vgs: 0.79mOhm @ 80A, 10V Power Dissipation (Max): 325W (Tc) Vgs(th) (Max) @ Id: 3.6V @ 720µA Supplier Device Package: 8-HPSOF Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 174 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12920 pF @ 40 V | auf Bestellung 3882 Stücke: Lieferzeit 10-14 Tag (e) |
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| NTBLS0D8N08XTXG | ON Semiconductor | MOSFET - Power, SingleN-Channel, TOLL80 V, 0.79 mOhm, 457 A | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTBLS0D8N08XTXG | onsemi | Description: MOSFET, POWER 80V SINGLE N-CHANN Packaging: Tape & Reel (TR) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 457A (Tc) Rds On (Max) @ Id, Vgs: 0.79mOhm @ 80A, 10V Power Dissipation (Max): 325W (Tc) Vgs(th) (Max) @ Id: 3.6V @ 720µA Supplier Device Package: 8-HPSOF Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 174 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12920 pF @ 40 V | auf Bestellung 2000 Stücke: Lieferzeit 10-14 Tag (e) |
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| NTBLS1D1N08H | onsemi | Description: MOSFET N-CH 80V 41A/351A 8HPSOF Packaging: Tape & Reel (TR) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 351A (Tc) Rds On (Max) @ Id, Vgs: 1.05mOhm @ 50A, 10V Power Dissipation (Max): 4.2W (Ta), 311W (Tc) Vgs(th) (Max) @ Id: 4V @ 650µA Supplier Device Package: 8-HPSOF Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 166 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11200 pF @ 40 V | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTBLS1D1N08H | ON Semiconductor | Single N-Channel Power MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTBLS1D1N08H | ONSEMI | Description: ONSEMI - NTBLS1D1N08H - Leistungs-MOSFET, n-Kanal, 80 V, 351 A, 0.00105 ohm, H-PSOF, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 80 Dauer-Drainstrom Id: 351 hazardous: false Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4 euEccn: NLR Verlustleistung: 311 Bauform - Transistor: H-PSOF Anzahl der Pins: 9 Produktpalette: - Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10 Betriebstemperatur, max.: 175 Drain-Source-Durchgangswiderstand: 0.00105 SVHC: Lead (10-Jun-2022) | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTBLS1D1N08H | ON Semiconductor | Single N-Channel Power MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTBLS1D1N08H | onsemi | Description: MOSFET N-CH 80V 41A/351A 8HPSOF Packaging: Cut Tape (CT) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 351A (Tc) Rds On (Max) @ Id, Vgs: 1.05mOhm @ 50A, 10V Power Dissipation (Max): 4.2W (Ta), 311W (Tc) Vgs(th) (Max) @ Id: 4V @ 650µA Supplier Device Package: 8-HPSOF Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 166 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11200 pF @ 40 V | auf Bestellung 1827 Stücke: Lieferzeit 10-14 Tag (e) |
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| NTBLS1D1N08H | ON Semiconductor | auf Bestellung 1800 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||||
| NTBLS1D1N08H | onsemi | MOSFET T8-80V IN TOLL | auf Bestellung 135 Stücke: Lieferzeit 10-14 Tag (e) |
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| NTBLS1D5N08MC | onsemi | Description: MOSFET N-CH 80V 32A/298A 8HPSOF Packaging: Tape & Reel (TR) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 298A (Tc) Rds On (Max) @ Id, Vgs: 1.53mOhm @ 80A, 10V Power Dissipation (Max): 2.9W (Ta), 250W (Tc) Vgs(th) (Max) @ Id: 4V @ 710µA Supplier Device Package: 8-HPSOF Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 111 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8170 pF @ 40 V | auf Bestellung 3900 Stücke: Lieferzeit 10-14 Tag (e) |
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| NTBLS1D5N08MC | onsemi | MOSFET PTNG 80V IN TOLL | auf Bestellung 8000 Stücke: Lieferzeit 10-14 Tag (e) |
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| NTBLS1D5N08MC | onsemi | Description: MOSFET N-CH 80V 32A/298A 8HPSOF Packaging: Cut Tape (CT) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 298A (Tc) Rds On (Max) @ Id, Vgs: 1.53mOhm @ 80A, 10V Power Dissipation (Max): 2.9W (Ta), 250W (Tc) Vgs(th) (Max) @ Id: 4V @ 710µA Supplier Device Package: 8-HPSOF Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 111 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8170 pF @ 40 V | auf Bestellung 3900 Stücke: Lieferzeit 10-14 Tag (e) |
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| NTBLS1D5N10MCTXG | onsemi | Description: MOSFET - POWER, SINGLE, N-CHANNE Packaging: Cut Tape (CT) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 312A (Tc) Rds On (Max) @ Id, Vgs: 1.5mOhm @ 80A, 10V Power Dissipation (Max): 3.4W (Ta), 322W (Tc) Vgs(th) (Max) @ Id: 4V @ 799µA Supplier Device Package: 8-HPSOF Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 131 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10100 pF @ 50 V | auf Bestellung 2228 Stücke: Lieferzeit 10-14 Tag (e) |
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| NTBLS1D5N10MCTXG | onsemi | MOSFET MOSFET - Power, Single, N-Channel, TOLL, 100 V, 1.53 mohm, 312 A | auf Bestellung 1963 Stücke: Lieferzeit 10-14 Tag (e) |
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| NTBLS1D5N10MCTXG | onsemi | Description: MOSFET - POWER, SINGLE, N-CHANNE Packaging: Tape & Reel (TR) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 312A (Tc) Rds On (Max) @ Id, Vgs: 1.5mOhm @ 80A, 10V Power Dissipation (Max): 3.4W (Ta), 322W (Tc) Vgs(th) (Max) @ Id: 4V @ 799µA Supplier Device Package: 8-HPSOF Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 131 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10100 pF @ 50 V | auf Bestellung 2000 Stücke: Lieferzeit 10-14 Tag (e) |
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| NTBLS1D7N08H | ONSEMI | Description: ONSEMI - NTBLS1D7N08H - Leistungs-MOSFET, n-Kanal, 80 V, 203 A, 0.00129 ohm, TO-LL, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 80V rohsCompliant: Y-EX Dauer-Drainstrom Id: 203A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.9V euEccn: NLR Verlustleistung: 167W Bauform - Transistor: TO-LL Anzahl der Pins: 8Pins Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.00129ohm | auf Bestellung 200 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| NTBLS1D7N08H | onsemi | Description: MOSFET - POWER, SINGLE, N-CHANNE Packaging: Cut Tape (CT) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 203A (Tc) Rds On (Max) @ Id, Vgs: 1.7mOhm @ 80A, 10V Power Dissipation (Max): 3.5W (Ta), 167W (Tc) Vgs(th) (Max) @ Id: 4V @ 479µA Supplier Device Package: 8-HPSOF Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7675 pF @ 40 V | auf Bestellung 2000 Stücke: Lieferzeit 10-14 Tag (e) |
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| NTBLS1D7N08H | onsemi | Description: MOSFET - POWER, SINGLE, N-CHANNE Packaging: Tape & Reel (TR) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 203A (Tc) Rds On (Max) @ Id, Vgs: 1.7mOhm @ 80A, 10V Power Dissipation (Max): 3.5W (Ta), 167W (Tc) Vgs(th) (Max) @ Id: 4V @ 479µA Supplier Device Package: 8-HPSOF Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7675 pF @ 40 V | auf Bestellung 2000 Stücke: Lieferzeit 10-14 Tag (e) |
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| NTBLS1D7N08H | ONSEMI | Description: ONSEMI - NTBLS1D7N08H - Leistungs-MOSFET, n-Kanal, 80 V, 203 A, 0.00129 ohm, TO-LL, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 80V rohsCompliant: Y-EX Dauer-Drainstrom Id: 203A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Verlustleistung Pd: 167W Gate-Source-Schwellenspannung, max.: 2.9V euEccn: NLR Verlustleistung: 167W Bauform - Transistor: TO-LL Qualifizierungsstandard der Automobilindustrie: - Anzahl der Pins: 8Pins Produktpalette: - productTraceability: Yes-Date/Lot Code Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Betriebswiderstand, Rds(on): 0.00129ohm Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.00129ohm | auf Bestellung 200 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| NTBLS1D7N08H | ON Semiconductor | Trans MOSFET N-CH 80V 29A 9-Pin(8+Tab) PSOF T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTBLS1D7N08H | onsemi | MOSFET MOSFET - Power, Single, N-Channel, TOLL, 80 V, 1.7 mohm?, 203 A | auf Bestellung 3428 Stücke: Lieferzeit 10-14 Tag (e) |
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| NTBLS1D7N10MCTXG | onsemi | MOSFET MOSFET, Power, Single N-Channel, 100V, TOLL Package | auf Bestellung 2000 Stücke: Lieferzeit 10-14 Tag (e) |
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| NTBLS1D7N10MCTXG | onsemi | Description: MOSFET, POWER, SINGLE N-CHANNEL, Packaging: Cut Tape (CT) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 272A (Tc) Rds On (Max) @ Id, Vgs: 1.8mOhm @ 80A, 10V Power Dissipation (Max): 3.4W (Ta), 295W (Tc) Vgs(th) (Max) @ Id: 4V @ 698µA Supplier Device Package: 8-HPSOF Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9200 pF @ 50 V | auf Bestellung 1945 Stücke: Lieferzeit 10-14 Tag (e) |
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| NTBLS1D7N10MCTXG | onsemi | Description: MOSFET, POWER, SINGLE N-CHANNEL, Packaging: Tape & Reel (TR) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 272A (Tc) Rds On (Max) @ Id, Vgs: 1.8mOhm @ 80A, 10V Power Dissipation (Max): 3.4W (Ta), 295W (Tc) Vgs(th) (Max) @ Id: 4V @ 698µA Supplier Device Package: 8-HPSOF Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9200 pF @ 50 V | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTBLS4D0N15MC | onsemi | Description: MOSFET N-CH 150V 19A/187A 8HPSOF Packaging: Tape & Reel (TR) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 187A (Tc) Rds On (Max) @ Id, Vgs: 4.4mOhm @ 80A, 10V Power Dissipation (Max): 3.4W (Ta), 316W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 584µA Supplier Device Package: 8-HPSOF Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 90.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7490 pF @ 75 V | auf Bestellung 4000 Stücke: Lieferzeit 10-14 Tag (e) |
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| NTBLS4D0N15MC | ONSEMI | Description: ONSEMI - NTBLS4D0N15MC - Leistungs-MOSFET, n-Kanal, 150 V, 187 A, 0.0031 ohm, H-PSOF, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 150V rohsCompliant: Y-EX Dauer-Drainstrom Id: 187A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3.7V euEccn: NLR Verlustleistung: 316W Bauform - Transistor: H-PSOF Anzahl der Pins: 8Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0031ohm | auf Bestellung 1965 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| NTBLS4D0N15MC | onsemi | Description: MOSFET N-CH 150V 19A/187A 8HPSOF Packaging: Cut Tape (CT) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 187A (Tc) Rds On (Max) @ Id, Vgs: 4.4mOhm @ 80A, 10V Power Dissipation (Max): 3.4W (Ta), 316W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 584µA Supplier Device Package: 8-HPSOF Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 90.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7490 pF @ 75 V | auf Bestellung 4155 Stücke: Lieferzeit 10-14 Tag (e) |
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| NTBLS4D0N15MC | ONSEMI | Description: ONSEMI - NTBLS4D0N15MC - Leistungs-MOSFET, n-Kanal, 150 V, 187 A, 0.0031 ohm, H-PSOF, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 150V rohsCompliant: Y-EX Dauer-Drainstrom Id: 187A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Verlustleistung Pd: 316W Gate-Source-Schwellenspannung, max.: 3.7V euEccn: NLR Verlustleistung: 316W Bauform - Transistor: H-PSOF Qualifizierungsstandard der Automobilindustrie: - Anzahl der Pins: 8Pins Produktpalette: - productTraceability: Yes-Date/Lot Code Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Betriebswiderstand, Rds(on): 0.0031ohm Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0031ohm | auf Bestellung 1995 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| NTBLS4D0N15MC | onsemi | MOSFET MOSFET - Power, Single, N-Channel, TOLL, 150 V, 4.4 mohm?, 187A | auf Bestellung 7999 Stücke: Lieferzeit 10-14 Tag (e) |
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| NTBM11R0U01110T | Amphenol Commercial Products | Automotive Connectors NETBridge 1x1 RA DIP 100Mbit/s Code A | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTBM11R1U01110T | Amphenol Commercial Products | Modular Connectors / Ethernet Connectors NETBridge 1x1 RA DIP 1Gbit/s Code A | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTBM12R0U01110T | Amphenol Commercial Products | Automotive Connectors NETBridge 1x2 RA DIP 100Mbit/s Code A | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTBM13R0U01110T | Amphenol Commercial Products | Automotive Connectors NETBridge 1x3 RA DIP 100Mbit/s Code A | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTBM13R0U01110T | Amphenol | NET Bridge Input Output Connectors Right angle 1X3 DIP 100Mps NONE-ESD CODE1 | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTBM14R0U01110T | Amphenol Commercial Products | Automotive Connectors NETBridge 1x4 RA DIP 100Mbit/s Code A | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTBM14R0U01110T | Amphenol | NET Bridge Input Output Connectors Right angle 1X4 DIP 100Mps NONE-ESD CODE1 | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTBM15R0U01110T | Amphenol Commercial Products | Automotive Connectors NETBridge 1x5 RA DIP 100Mbit/s Code A | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTBM16R0U01110T | Amphenol Commercial Products | Automotive Connectors NETBridge 1x6 RA DIP 100Mbit/s Code A | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTBM17R0U01110T | Amphenol Commercial Products | Automotive Connectors NETBridge 1x7 RA DIP 100Mbit/s Code A | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTBMS-FSNXP | NXP USA Inc. | Description: BATTERY MGMT REF DESIGN ASIL C Packaging: Bulk Function: Battery Monitor, Car Type: Power Management Utilized IC / Part: FS4503C, MC33772B, S32K144 Supplied Contents: Board(s) Embedded: Yes, MCU, 32-Bit Part Status: Active | auf Bestellung 1 Stücke: Lieferzeit 10-14 Tag (e) |
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| NTBMS-FSNXP | NXP Semiconductors | Power Management IC Development Tools NewTec NXP BMS Kit | auf Bestellung 2 Stücke: Lieferzeit 10-14 Tag (e) |
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| NTBMS-FSNXP | NXP Semiconductors | FS4503C/MC33772B/S32K144 Battery Management Development Board Automotive | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTBN | Apex Tool Group | Description: TIP SOLDER CHISEL DIM .094" | auf Bestellung 29 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||||
| NTBN-M20 | Fraenkische USA, LP | Description: FIPLOCK, LOCKNUT, M20X1.5, BRASS Features: M20 Thread Packaging: Bulk For Use With/Related Products: Fiplock ONE® Series Material: Brass, Nickel Plated Accessory Type: Locknut | auf Bestellung 1426 Stücke: Lieferzeit 10-14 Tag (e) |
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| NTBN-M20-EMV | Fraenkische USA, LP | Description: FIPLOCK, LOCKNUT, M20X1.5, BRASS Features: M20 Thread Packaging: Bulk For Use With/Related Products: Fiplock ONE® Series Material: Brass, Nickel Plated Accessory Type: Locknut | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTBN-M32 | Fraenkische USA, LP | Description: FIPLOCK, LOCKNUT, M32X1.5, BRASS | auf Bestellung 352 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||||
| NTBN-M32-EMV | Fraenkische USA, LP | Description: FIPLOCK, LOCKNUT, M32X1.5, BRASS | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTBN-M50 | Fraenkische USA, LP | Description: FIPLOCK, LOCKNUT, M50X1.5, BRASS Packaging: Bulk Features: M50 Thread For Use With/Related Products: Fiplock ONE® Series Material: Brass, Nickel Plated Accessory Type: Locknut | auf Bestellung 58 Stücke: Lieferzeit 10-14 Tag (e) |
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| NTBN-M63 | Fraenkische USA, LP | Description: FIPLOCK, LOCKNUT, M63X1.5, BRASS | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTBN-P07 | Fraenkische USA, LP | Description: FIPLOCK, LOCKNUT, PG07, BRASS-NI Packaging: Bulk Features: PG7 Thread For Use With/Related Products: Fiplock ONE® Series Material: Brass, Nickel Plated Accessory Type: Locknut Part Status: Active | auf Bestellung 750 Stücke: Lieferzeit 10-14 Tag (e) |
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| NTBN-P07-EMV | Fraenkische USA, LP | Description: FIPLOCK, LOCKNUT, PG07, BRASS-NI Packaging: Bulk Features: PG7 Thread For Use With/Related Products: Fiplock ONE® Series Material: Brass, Nickel Plated Accessory Type: Locknut Part Status: Active | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTBN-P09 | Fraenkische USA, LP | Description: FIPLOCK, LOCKNUT, PG09, BRASS-NI Features: PG9 Thread Packaging: Bulk For Use With/Related Products: Fiplock ONE® Series Material: Brass, Nickel Plated Accessory Type: Locknut Part Status: Active | auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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| NTBN-P21 | Fraenkische USA, LP | Description: FIPLOCK, LOCKNUT, PG21, BRASS-NI Packaging: Bulk Features: PG21 Thread For Use With/Related Products: Fiplock ONE® Series Material: Brass, Nickel Plated Accessory Type: Locknut | auf Bestellung 735 Stücke: Lieferzeit 10-14 Tag (e) |
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| NTBN-P29 | Fraenkische USA, LP | Description: FIPLOCK, LOCKNUT, PG29, BRASS-NI Packaging: Bulk Features: PG29 Thread For Use With/Related Products: Fiplock ONE® Series Material: Brass, Nickel Plated Accessory Type: Locknut | auf Bestellung 357 Stücke: Lieferzeit 10-14 Tag (e) |
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| NTBN-P36 | Fraenkische USA, LP | Description: FIPLOCK, LOCKNUT, PG36, BRASS-NI Packaging: Bulk Features: PG36 Thread For Use With/Related Products: Fiplock ONE® Series Material: Brass, Nickel Plated Accessory Type: Locknut | auf Bestellung 360 Stücke: Lieferzeit 10-14 Tag (e) |
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| NTBN-P42 | Fraenkische USA, LP | Description: FIPLOCK, LOCKNUT, PG42, BRASS-NI | auf Bestellung 80 Stücke: Lieferzeit 10-14 Tag (e) |
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| NTBN-P48 | Fraenkische USA, LP | Description: FIPLOCK, LOCKNUT, PG48, BRASS-NI Packaging: Bulk Features: PG48 Thread For Use With/Related Products: Fiplock ONE® Series Material: Brass, Nickel Plated Accessory Type: Locknut | auf Bestellung 80 Stücke: Lieferzeit 10-14 Tag (e) |
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| NTBS2D7N06M7 | ON Semiconductor | Trans MOSFET N-CH 60V 110A 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTBS2D7N06M7 | onsemi | Description: MOSFET N-CH 60V 110A D2PAK-3 | auf Bestellung 686 Stücke: Lieferzeit 10-14 Tag (e) |
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| NTBS2D7N06M7 | onsemi | Description: MOSFET N-CH 60V 110A D2PAK-3 | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTBS2D7N06M7 | onsemi | MOSFET NMOS 60V 2.7 MOHM | auf Bestellung 422 Stücke: Lieferzeit 10-14 Tag (e) |
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| NTBS9D0N10MC | ONSEMI | Description: ONSEMI - NTBS9D0N10MC - Leistungs-MOSFET, n-Kanal, 100 V, 60 A, 0.0078 ohm, TO-263 (D2PAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 60A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Verlustleistung Pd: 68W Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 68W Bauform - Transistor: TO-263 (D2PAK) Qualifizierungsstandard der Automobilindustrie: - Anzahl der Pins: 3Pins Produktpalette: - productTraceability: Yes-Date/Lot Code Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Betriebswiderstand, Rds(on): 0.0078ohm Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0078ohm | auf Bestellung 1407 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| NTBS9D0N10MC | ONSEMI | Description: ONSEMI - NTBS9D0N10MC - Leistungs-MOSFET, n-Kanal, 100 V, 60 A, 0.0078 ohm, TO-263 (D2PAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 60A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 68W Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 3Pins Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0078ohm | auf Bestellung 1407 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| NTBS9D0N10MC | onsemi | MOSFET PTNG 100V 9.0MOHM, D2PAK-3L | auf Bestellung 6999 Stücke: Lieferzeit 10-14 Tag (e) |
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| NTBT-F135L10P3 | auf Bestellung 15 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
| NTBT-F153L10-P3-A | auf Bestellung 309 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
| NTBT-R153H09-P3 | auf Bestellung 8 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
| NTBV25P06T4G | ON Semiconductor | Description: MOSFET P-CH 60V 27.5A D2PAK | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTBV30N20T4G | ON Semiconductor | TRANS MOSFET N-CH 60V 45A 3-PIN(2+TAB) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTBV30N20T4G | ON Semiconductor | Description: MOSFET N-CH 200V 30A D2PAK | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTBV30N20T4G | ON Semiconductor | TRANS MOSFET N-CH 60V 45A 3-PIN(2+TAB) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTBV45N06LT4G | ON Semiconductor | MOSFET NFET 60V 45A 28MOHM | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTBV45N06LT4G | onsemi | Description: MOSFET N-CH 60V 45A D2PAK | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTBV45N06LT4G | ON Semiconductor | Trans MOSFET N-CH 60V 45A Automotive 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTBV45N06T4G | onsemi | Description: MOSFET N-CH 60V 45A D2PAK | auf Bestellung 62973 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||||
| NTBV45N06T4G | onsemi | Description: MOSFET N-CH 60V 45A D2PAK | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTBV45N06T4G | ONSEMI | Description: ONSEMI - NTBV45N06T4G - NTBV45N06T4G, SINGLE BIPOLAR TRANSISTORS tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) | auf Bestellung 61813 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| NTBV5605T4G | ON Semiconductor | Description: MOSFET P-CH 60V 18.5A D2PAK | Produkt ist nicht verfügbar | |||||||||||||||||||
| NTBV5605T4G | ON Semiconductor | MOSFET NFET 60V 18.5A 14MO | auf Bestellung 680 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||||
| NTBV75N06T4G | onsemi | Description: MOSFET N-CH 60V 75A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Ta) Rds On (Max) @ Id, Vgs: 9.5mOhm @ 37.5A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D2PAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4510 pF @ 25 V | Produkt ist nicht verfügbar |