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AOB600A70L AOB600A70L Alpha & Omega Semiconductor Inc. Description: MOSFET N-CH 700V 8.5A TO263
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AOB600A70L AOB600A70L Alpha & Omega Semiconductor Inc. Description: MOSFET N-CH 700V 8.5A TO263
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AOB66515L Alpha & Omega Semiconductor Inc. Description: AOB66515L
Produkt ist nicht verfügbar
 Mindestbestellmenge: 800 Stücke
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AOB66518L Alpha & Omega Semiconductor Inc. AOB66518L.pdf Description: N
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 120A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V
Power Dissipation (Max): 10W (Ta), 375W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6460 pF @ 75 V
Produkt ist nicht verfügbar
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AOB66613L AOB66613L Alpha & Omega Semiconductor Inc. AOB66613L.pdf Description: MOSFET N-CH 60V 44.5A/120A TO263
Current - Continuous Drain (Id) @ 25°C: 44.5A (Ta), 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Part Status: Active
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 8.3W (Ta), 260W (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 20A, 10V
auf Bestellung 4894 Stücke:
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AOB66613L AOB66613L Alpha & Omega Semiconductor Inc. AOB66613L.pdf Description: MOSFET N-CH 60V 44.5A/120A TO263
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Part Status: Active
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 8.3W (Ta), 260W (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 44.5A (Ta), 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
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800+2.52 EUR
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AOB66616L AOB66616L Alpha & Omega Semiconductor Inc. AOB66616L.pdf Description: MOSFET N-CH 60V 38.5A/140A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38.5A (Ta), 140A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 20A, 10V
Power Dissipation (Max): 8.3W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2870 pF @ 30 V
auf Bestellung 470 Stücke:
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AOB66616L AOB66616L Alpha & Omega Semiconductor Inc. AOB66616L.pdf Description: MOSFET N-CH 60V 38.5A/140A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38.5A (Ta), 140A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 20A, 10V
Power Dissipation (Max): 8.3W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2870 pF @ 30 V
Produkt ist nicht verfügbar
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AOB66620L Alpha & Omega Semiconductor Inc. AOB66620L.pdf Description: N
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 57A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 20A, 10V
Power Dissipation (Max): 8.3W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1070 pF @ 30 V
Produkt ist nicht verfügbar
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AOB66811L AOB66811L Alpha & Omega Semiconductor Inc. AOB66811L.pdf Description: FET N CHANNEL 80V
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Ta), 140A (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 20A, 10V
Power Dissipation (Max): 10W (Ta), 310W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5750 pF @ 40 V
auf Bestellung 6706 Stücke:
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3+7.64 EUR
10+5.02 EUR
100+3.53 EUR
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AOB66811L AOB66811L Alpha & Omega Semiconductor Inc. AOB66811L.pdf Description: FET N CHANNEL 80V
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Ta), 140A (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 20A, 10V
Power Dissipation (Max): 10W (Ta), 310W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5750 pF @ 40 V
auf Bestellung 6400 Stücke:
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800+2.75 EUR
1600+2.57 EUR
2400+2.48 EUR
4000+2.43 EUR
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AOB66914L AOB66914L Alpha & Omega Semiconductor Inc. AOB66914L.pdf Description: N
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Ta), 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 20A, 6V
Power Dissipation (Max): 10W (Ta), 375W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12500 pF @ 50 V
auf Bestellung 481 Stücke:
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10+11.51 EUR
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AOB66914L AOB66914L Alpha & Omega Semiconductor Inc. AOB66914L.pdf Description: N
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Ta), 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 20A, 6V
Power Dissipation (Max): 10W (Ta), 375W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12500 pF @ 50 V
Produkt ist nicht verfügbar
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AOB66916L AOB66916L Alpha & Omega Semiconductor Inc. AOB66916L.pdf Description: MOSFET N-CH 100V 35.5/120A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35.5A (Ta), 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 20A, 10V
Power Dissipation (Max): 8.3W (Ta), 277W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6180 pF @ 50 V
auf Bestellung 1600 Stücke:
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800+3.76 EUR
1600+3.52 EUR
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AOB66916L AOB66916L Alpha & Omega Semiconductor Inc. AOB66916L.pdf Description: MOSFET N-CH 100V 35.5/120A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35.5A (Ta), 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 20A, 10V
Power Dissipation (Max): 8.3W (Ta), 277W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6180 pF @ 50 V
auf Bestellung 2352 Stücke:
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10+6.66 EUR
100+4.75 EUR
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AOB66918L AOB66918L Alpha & Omega Semiconductor Inc. AOB66918L.pdf Description: N
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Ta), 120A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V
Power Dissipation (Max): 10W (Ta), 375W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 50 V
Produkt ist nicht verfügbar
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AOB66919L AOB66919L Alpha & Omega Semiconductor Inc. AOB66919L.pdf Description: N
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 105A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 20A, 10V
Power Dissipation (Max): 10W (Ta), 187W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3420 pF @ 50 V
Produkt ist nicht verfügbar
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AOB66920L AOB66920L Alpha & Omega Semiconductor Inc. AOT66920L.pdf Description: MOSFET N-CH 100V 22.5A/80A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22.5A (Ta), 80A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V
Power Dissipation (Max): 8.3W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 50 V
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AOB66920L AOB66920L Alpha & Omega Semiconductor Inc. AOT66920L.pdf Description: MOSFET N-CH 100V 22.5A/80A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22.5A (Ta), 80A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V
Power Dissipation (Max): 8.3W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 50 V
Produkt ist nicht verfügbar
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AOB780A70L AOB780A70L Alpha & Omega Semiconductor Inc. Description: LINEAR IC
Input Capacitance (Ciss) (Max) @ Vds: 675 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 11.5 nC @ 10 V
Drain to Source Voltage (Vdss): 700 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 4.1V @ 250µA
Power Dissipation (Max): 89W (Tc)
Rds On (Max) @ Id, Vgs: 780mOhm @ 1.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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AOB7S60L AOB7S60L Alpha & Omega Semiconductor Inc. AOB7S60.pdf Description: MOSFET N-CH 600V 7A TO263
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AOB7S60L AOB7S60L Alpha & Omega Semiconductor Inc. AOB7S60.pdf Description: MOSFET N-CH 600V 7A TO263
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AOB7S65L AOB7S65L Alpha & Omega Semiconductor Inc. TO263.pdf Description: MOSFET N-CH 650V 7A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 3.5A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 9.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 434 pF @ 100 V
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AOB7S65L AOB7S65L Alpha & Omega Semiconductor Inc. TO263.pdf Description: MOSFET N-CH 650V 7A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 3.5A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 9.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 434 pF @ 100 V
Produkt ist nicht verfügbar
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AOB9N70L AOB9N70L Alpha & Omega Semiconductor Inc. AOB9N70L.pdf Description: MOSFET N-CH 700V 9A TO263
Input Capacitance (Ciss) (Max) @ Vds: 1630 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Drain to Source Voltage (Vdss): 700 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 236W (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 4.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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AOB9N70L AOB9N70L Alpha & Omega Semiconductor Inc. AOB9N70L.pdf Description: MOSFET N-CH 700V 9A TO263
Input Capacitance (Ciss) (Max) @ Vds: 1630 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Drain to Source Voltage (Vdss): 700 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 236W (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 4.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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AOC2401 AOC2401 Alpha & Omega Semiconductor Inc. AOC2401.pdf Description: MOSFET P-CH 30V 3A 4ALPHADFN
Input Capacitance (Ciss) (Max) @ Vds: 1327 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Supplier Device Package: 4-AlphaDFN (1.57x1.57)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Power Dissipation (Max): 550mW (Ta)
Rds On (Max) @ Id, Vgs: 41mOhm @ 1.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-SMD, No Lead
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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AOC2403 AOC2403 Alpha & Omega Semiconductor Inc. AOC2403.pdf Description: MOSFET P-CH 20V 1.8A 4ALPHADFN
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
Rds On (Max) @ Id, Vgs: 95mOhm @ 1A, 4.5V
Power Dissipation (Max): 450mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 4-AlphaDFN (0.97x0.97)
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 405 pF @ 10 V
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AOC2403 AOC2403 Alpha & Omega Semiconductor Inc. AOC2403.pdf Description: MOSFET P-CH 20V 1.8A 4ALPHADFN
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
Rds On (Max) @ Id, Vgs: 95mOhm @ 1A, 4.5V
Power Dissipation (Max): 450mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 4-AlphaDFN (0.97x0.97)
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 405 pF @ 10 V
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AOC2411 AOC2411 Alpha & Omega Semiconductor Inc. AOC2411.pdf Description: MOSFET P-CH 30V 3.4A 4WLCSP
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AOC2411 AOC2411 Alpha & Omega Semiconductor Inc. AOC2411.pdf Description: MOSFET P-CH 30V 3.4A 4WLCSP
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AOC2411 AOC2411 Alpha & Omega Semiconductor Inc. AOC2411.pdf Description: MOSFET P-CH 30V 3.4A 4WLCSP
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AOC2412 AOC2412 Alpha & Omega Semiconductor Inc. AOC2412.pdf Description: MOSFET N-CH 20V 4.5A 4WLCSP
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AOC2413 AOC2413 Alpha & Omega Semiconductor Inc. AOC2413.pdf Description: MOSFET P-CH 8V 3.5A 4ALPHADFN
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AOC2414 AOC2414 Alpha & Omega Semiconductor Inc. AOC2414.pdf Description: MOSFET N-CH 8V 4.5A MCSP1.57
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AOC2415 AOC2415 Alpha & Omega Semiconductor Inc. AOC2415.pdf Description: MOSFET P-CH 20V 3.5A 4WLCSP
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AOC2417 AOC2417 Alpha & Omega Semiconductor Inc. AOC2417.pdf Description: MOSFET P-CH 20V 3.5A 4WLCSP
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AOC2421 AOC2421 Alpha & Omega Semiconductor Inc. AOC2421.pdf Description: MOSFET P-CH 8V 2.5A 4ALPHADFN
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 62mOhm @ 1.5A, 2.5V
Power Dissipation (Max): 600mW (Ta)
Vgs(th) (Max) @ Id: 700mV @ 250µA
Supplier Device Package: 4-AlphaDFN (0.97x0.97)
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 2.5V
Vgs (Max): ±5V
Drain to Source Voltage (Vdss): 8 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 752 pF @ 4 V
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AOC2422 AOC2422 Alpha & Omega Semiconductor Inc. AOC2422.pdf Description: MOSFET N-CH 8V 3.5A 4WLCSP
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AOC2423 AOC2423 Alpha & Omega Semiconductor Inc. AOC2423.pdf Description: MOSFET P-CH 20V 2A 4WLCSP
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AOC2800 AOC2800 Alpha & Omega Semiconductor Inc. Description: MOSFET 2N-CH 4WLCSP
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AOC2802 AOC2802 Alpha & Omega Semiconductor Inc. Description: MOSFET 2N-CH 4WLCSP
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AOC2802_001 Alpha & Omega Semiconductor Inc. Description: MOSFET 2N-CH 4WLCSP
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AOC2804 AOC2804 Alpha & Omega Semiconductor Inc. AOC2804.pdf Description: MOSFET 2N-CH 20V
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AOC2804 AOC2804 Alpha & Omega Semiconductor Inc. AOC2804.pdf Description: MOSFET 2N-CH
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AOC2804B AOC2804B Alpha & Omega Semiconductor Inc. AOC2804B.pdf Description: MOSFET 2 N-CHANNEL 4DFN
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AOC2806 AOC2806 Alpha & Omega Semiconductor Inc. Description: MOSFET 2N-CH 20V 4DFN
Packaging: Tape & Reel (TR)
Package / Case: 4-XDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 700mW
Gate Charge (Qg) (Max) @ Vgs: 12.5nC @ 4.5V
Supplier Device Package: 4-DFN (1.7x1.7)
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AOC2806 AOC2806 Alpha & Omega Semiconductor Inc. Description: MOSFET 2N-CH 20V 4DFN
Packaging: Cut Tape (CT)
Package / Case: 4-XDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 700mW
Gate Charge (Qg) (Max) @ Vgs: 12.5nC @ 4.5V
Supplier Device Package: 4-DFN (1.7x1.7)
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AOC2870 AOC2870 Alpha & Omega Semiconductor Inc. AOC2870.pdf Description: MOSFET 2N-CH 4DFN
Packaging: Tape & Reel (TR)
Package / Case: 4-XDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W
Gate Charge (Qg) (Max) @ Vgs: 11.5nC @ 4.5V
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: 4-DFN (1.7x1.7)
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AOC2870 AOC2870 Alpha & Omega Semiconductor Inc. AOC2870.pdf Description: MOSFET 2N-CH 4DFN
Packaging: Cut Tape (CT)
Package / Case: 4-XDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W
Gate Charge (Qg) (Max) @ Vgs: 11.5nC @ 4.5V
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: 4-DFN (1.7x1.7)
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AOC3860A Alpha & Omega Semiconductor Inc. combine-support-documents?resources=1604 Description: MOSFET 2N-CH 12V 25A 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, No Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W (Ta)
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 44nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-AlphaDFN (3.05x1.77)
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AOC3860C AOC3860C Alpha & Omega Semiconductor Inc. AOC3860C.pdf Description: MOSFET 2N-CH 12V 25A 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, No Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W (Ta)
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 36nC @ 4.5V
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: 6-AlphaDFN (3.05x1.77)
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AOC3860C AOC3860C Alpha & Omega Semiconductor Inc. AOC3860C.pdf Description: MOSFET 2N-CH 12V 25A 6DFN
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, No Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W (Ta)
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 36nC @ 4.5V
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: 6-AlphaDFN (3.05x1.77)
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AOC3862 Alpha & Omega Semiconductor Inc. Description: MOSFET 2N-CH 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-XDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W
Gate Charge (Qg) (Max) @ Vgs: 46nC @ 4.5V
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Supplier Device Package: 6-DFN (3.55x1.77)
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AOC3864 Alpha & Omega Semiconductor Inc. AOC3864.pdf Description: MOSFET 2 N-CHANNEL 6DFN
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AOC3870C Alpha & Omega Semiconductor Inc. AOC3870C.pdf Description: MOSFET 2N-CH 12V 25A 10DFN
Packaging: Tape & Reel (TR)
Package / Case: 10-SMD, No Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W (Ta)
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 4.5V
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: 10-AlphaDFN (3.01x1.52)
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AOC3870C Alpha & Omega Semiconductor Inc. AOC3870C.pdf Description: MOSFET 2N-CH 12V 25A 10DFN
Packaging: Cut Tape (CT)
Package / Case: 10-SMD, No Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W (Ta)
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 4.5V
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: 10-AlphaDFN (3.01x1.52)
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AOC3878 Alpha & Omega Semiconductor Inc. AOC3878.pdf Description: MOSFET 2N-CH 12V 35A 10DFN
Packaging: Tape & Reel (TR)
Package / Case: 10-SMD, No Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W (Ta)
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 35A (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 60nC @ 4.5V
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: 10-AlphaDFN (3.55x1.77)
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AOC4810 AOC4810 Alpha & Omega Semiconductor Inc. AOSGreenPolicy.pdf Description: MOSFET 2N-CH 8ALPHADFN
Packaging: Tape & Reel (TR)
Package / Case: 8-XFLGA Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 900mW
Input Capacitance (Ciss) (Max) @ Vds: 1130pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
FET Feature: Logic Level Gate
Supplier Device Package: 8-AlphaDFN (3.2x2)
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AOC4810 AOC4810 Alpha & Omega Semiconductor Inc. AOSGreenPolicy.pdf Description: MOSFET 2N-CH 8ALPHADFN
Packaging: Cut Tape (CT)
Package / Case: 8-XFLGA Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 900mW
Input Capacitance (Ciss) (Max) @ Vds: 1130pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
FET Feature: Logic Level Gate
Supplier Device Package: 8-AlphaDFN (3.2x2)
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AOB600A70L
AOB600A70L
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 700V 8.5A TO263
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AOB600A70L
AOB600A70L
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 700V 8.5A TO263
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AOB66515L
Hersteller: Alpha & Omega Semiconductor Inc.
Description: AOB66515L
Produkt ist nicht verfügbar
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AOB66518L AOB66518L.pdf
Hersteller: Alpha & Omega Semiconductor Inc.
Description: N
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 120A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V
Power Dissipation (Max): 10W (Ta), 375W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6460 pF @ 75 V
Produkt ist nicht verfügbar
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AOB66613L AOB66613L.pdf
AOB66613L
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 60V 44.5A/120A TO263
Current - Continuous Drain (Id) @ 25°C: 44.5A (Ta), 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Part Status: Active
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 8.3W (Ta), 260W (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 20A, 10V
auf Bestellung 4894 Stücke:
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AnzahlPrivatkunde
3+7.39 EUR
10+4.87 EUR
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AOB66613L AOB66613L.pdf
AOB66613L
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 60V 44.5A/120A TO263
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Part Status: Active
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 8.3W (Ta), 260W (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 44.5A (Ta), 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
auf Bestellung 4000 Stücke:
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AnzahlPrivatkunde
800+2.52 EUR
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AOB66616L AOB66616L.pdf
AOB66616L
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 60V 38.5A/140A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38.5A (Ta), 140A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 20A, 10V
Power Dissipation (Max): 8.3W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2870 pF @ 30 V
auf Bestellung 470 Stücke:
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AnzahlPrivatkunde
4+5.78 EUR
10+3.76 EUR
100+2.61 EUR
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AOB66616L AOB66616L.pdf
AOB66616L
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 60V 38.5A/140A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38.5A (Ta), 140A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 20A, 10V
Power Dissipation (Max): 8.3W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2870 pF @ 30 V
Produkt ist nicht verfügbar
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AOB66620L AOB66620L.pdf
Hersteller: Alpha & Omega Semiconductor Inc.
Description: N
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 57A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 20A, 10V
Power Dissipation (Max): 8.3W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1070 pF @ 30 V
Produkt ist nicht verfügbar
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AOB66811L AOB66811L.pdf
AOB66811L
Hersteller: Alpha & Omega Semiconductor Inc.
Description: FET N CHANNEL 80V
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Ta), 140A (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 20A, 10V
Power Dissipation (Max): 10W (Ta), 310W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5750 pF @ 40 V
auf Bestellung 6706 Stücke:
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AnzahlPrivatkunde
3+7.64 EUR
10+5.02 EUR
100+3.53 EUR
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AOB66811L AOB66811L.pdf
AOB66811L
Hersteller: Alpha & Omega Semiconductor Inc.
Description: FET N CHANNEL 80V
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Ta), 140A (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 20A, 10V
Power Dissipation (Max): 10W (Ta), 310W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5750 pF @ 40 V
auf Bestellung 6400 Stücke:
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800+2.75 EUR
1600+2.57 EUR
2400+2.48 EUR
4000+2.43 EUR
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AOB66914L AOB66914L.pdf
AOB66914L
Hersteller: Alpha & Omega Semiconductor Inc.
Description: N
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Ta), 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 20A, 6V
Power Dissipation (Max): 10W (Ta), 375W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12500 pF @ 50 V
auf Bestellung 481 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+16.86 EUR
10+11.51 EUR
100+8.47 EUR
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AOB66914L AOB66914L.pdf
AOB66914L
Hersteller: Alpha & Omega Semiconductor Inc.
Description: N
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Ta), 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 20A, 6V
Power Dissipation (Max): 10W (Ta), 375W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12500 pF @ 50 V
Produkt ist nicht verfügbar
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AOB66916L AOB66916L.pdf
AOB66916L
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 100V 35.5/120A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35.5A (Ta), 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 20A, 10V
Power Dissipation (Max): 8.3W (Ta), 277W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6180 pF @ 50 V
auf Bestellung 1600 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
800+3.76 EUR
1600+3.52 EUR
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AOB66916L AOB66916L.pdf
AOB66916L
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 100V 35.5/120A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35.5A (Ta), 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 20A, 10V
Power Dissipation (Max): 8.3W (Ta), 277W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6180 pF @ 50 V
auf Bestellung 2352 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+10.03 EUR
10+6.66 EUR
100+4.75 EUR
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AOB66918L AOB66918L.pdf
AOB66918L
Hersteller: Alpha & Omega Semiconductor Inc.
Description: N
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Ta), 120A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V
Power Dissipation (Max): 10W (Ta), 375W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 50 V
Produkt ist nicht verfügbar
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AOB66919L AOB66919L.pdf
AOB66919L
Hersteller: Alpha & Omega Semiconductor Inc.
Description: N
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 105A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 20A, 10V
Power Dissipation (Max): 10W (Ta), 187W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3420 pF @ 50 V
Produkt ist nicht verfügbar
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AOB66920L AOT66920L.pdf
AOB66920L
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 100V 22.5A/80A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22.5A (Ta), 80A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V
Power Dissipation (Max): 8.3W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 50 V
Produkt ist nicht verfügbar
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AOB66920L AOT66920L.pdf
AOB66920L
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 100V 22.5A/80A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22.5A (Ta), 80A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V
Power Dissipation (Max): 8.3W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 50 V
Produkt ist nicht verfügbar
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AOB780A70L
AOB780A70L
Hersteller: Alpha & Omega Semiconductor Inc.
Description: LINEAR IC
Input Capacitance (Ciss) (Max) @ Vds: 675 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 11.5 nC @ 10 V
Drain to Source Voltage (Vdss): 700 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 4.1V @ 250µA
Power Dissipation (Max): 89W (Tc)
Rds On (Max) @ Id, Vgs: 780mOhm @ 1.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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AOB7S60L AOB7S60.pdf
AOB7S60L
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 600V 7A TO263
Produkt ist nicht verfügbar
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AOB7S60L AOB7S60.pdf
AOB7S60L
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 600V 7A TO263
Produkt ist nicht verfügbar
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AOB7S65L TO263.pdf
AOB7S65L
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 650V 7A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 3.5A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 9.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 434 pF @ 100 V
Produkt ist nicht verfügbar
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AOB7S65L TO263.pdf
AOB7S65L
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 650V 7A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 3.5A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 9.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 434 pF @ 100 V
Produkt ist nicht verfügbar
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AOB9N70L AOB9N70L.pdf
AOB9N70L
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 700V 9A TO263
Input Capacitance (Ciss) (Max) @ Vds: 1630 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Drain to Source Voltage (Vdss): 700 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 236W (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 4.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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AOB9N70L AOB9N70L.pdf
AOB9N70L
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 700V 9A TO263
Input Capacitance (Ciss) (Max) @ Vds: 1630 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Drain to Source Voltage (Vdss): 700 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 236W (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 4.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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AOC2401 AOC2401.pdf
AOC2401
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET P-CH 30V 3A 4ALPHADFN
Input Capacitance (Ciss) (Max) @ Vds: 1327 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Supplier Device Package: 4-AlphaDFN (1.57x1.57)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Power Dissipation (Max): 550mW (Ta)
Rds On (Max) @ Id, Vgs: 41mOhm @ 1.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-SMD, No Lead
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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AOC2403 AOC2403.pdf
AOC2403
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET P-CH 20V 1.8A 4ALPHADFN
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
Rds On (Max) @ Id, Vgs: 95mOhm @ 1A, 4.5V
Power Dissipation (Max): 450mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 4-AlphaDFN (0.97x0.97)
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 405 pF @ 10 V
Produkt ist nicht verfügbar
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AOC2403 AOC2403.pdf
AOC2403
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET P-CH 20V 1.8A 4ALPHADFN
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
Rds On (Max) @ Id, Vgs: 95mOhm @ 1A, 4.5V
Power Dissipation (Max): 450mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 4-AlphaDFN (0.97x0.97)
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 405 pF @ 10 V
Produkt ist nicht verfügbar
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AOC2411 AOC2411.pdf
AOC2411
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET P-CH 30V 3.4A 4WLCSP
Produkt ist nicht verfügbar
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AOC2411 AOC2411.pdf
AOC2411
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET P-CH 30V 3.4A 4WLCSP
Produkt ist nicht verfügbar
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AOC2411 AOC2411.pdf
AOC2411
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET P-CH 30V 3.4A 4WLCSP
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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AOC2412 AOC2412.pdf
AOC2412
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 20V 4.5A 4WLCSP
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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AOC2413 AOC2413.pdf
AOC2413
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET P-CH 8V 3.5A 4ALPHADFN
Produkt ist nicht verfügbar
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AOC2414 AOC2414.pdf
AOC2414
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 8V 4.5A MCSP1.57
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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AOC2415 AOC2415.pdf
AOC2415
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET P-CH 20V 3.5A 4WLCSP
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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AOC2417 AOC2417.pdf
AOC2417
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET P-CH 20V 3.5A 4WLCSP
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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AOC2421 AOC2421.pdf
AOC2421
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET P-CH 8V 2.5A 4ALPHADFN
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 62mOhm @ 1.5A, 2.5V
Power Dissipation (Max): 600mW (Ta)
Vgs(th) (Max) @ Id: 700mV @ 250µA
Supplier Device Package: 4-AlphaDFN (0.97x0.97)
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 2.5V
Vgs (Max): ±5V
Drain to Source Voltage (Vdss): 8 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 752 pF @ 4 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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AOC2422 AOC2422.pdf
AOC2422
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 8V 3.5A 4WLCSP
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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AOC2423 AOC2423.pdf
AOC2423
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET P-CH 20V 2A 4WLCSP
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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AOC2800
AOC2800
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 4WLCSP
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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AOC2802
AOC2802
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 4WLCSP
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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AOC2802_001
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 4WLCSP
Produkt ist nicht verfügbar
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AOC2804 AOC2804.pdf
AOC2804
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 20V
auf Bestellung 3158 Stücke:
Lieferzeit 10-14 Tag (e)
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AOC2804 AOC2804.pdf
AOC2804
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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AOC2804B AOC2804B.pdf
AOC2804B
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2 N-CHANNEL 4DFN
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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AOC2806
AOC2806
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 20V 4DFN
Packaging: Tape & Reel (TR)
Package / Case: 4-XDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 700mW
Gate Charge (Qg) (Max) @ Vgs: 12.5nC @ 4.5V
Supplier Device Package: 4-DFN (1.7x1.7)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AOC2806
AOC2806
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 20V 4DFN
Packaging: Cut Tape (CT)
Package / Case: 4-XDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 700mW
Gate Charge (Qg) (Max) @ Vgs: 12.5nC @ 4.5V
Supplier Device Package: 4-DFN (1.7x1.7)
auf Bestellung 391 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
14+1.57 EUR
21+1.05 EUR
100+0.71 EUR
Mindestbestellmenge: 14 Stücke
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AOC2870 AOC2870.pdf
AOC2870
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 4DFN
Packaging: Tape & Reel (TR)
Package / Case: 4-XDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W
Gate Charge (Qg) (Max) @ Vgs: 11.5nC @ 4.5V
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: 4-DFN (1.7x1.7)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.68 EUR
Mindestbestellmenge: 3000 Stücke
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AOC2870 AOC2870.pdf
AOC2870
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 4DFN
Packaging: Cut Tape (CT)
Package / Case: 4-XDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W
Gate Charge (Qg) (Max) @ Vgs: 11.5nC @ 4.5V
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: 4-DFN (1.7x1.7)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
12+1.78 EUR
14+1.55 EUR
100+1.07 EUR
500+0.89 EUR
1000+0.76 EUR
Mindestbestellmenge: 12 Stücke
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AOC3860A combine-support-documents?resources=1604
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 12V 25A 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, No Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W (Ta)
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 44nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-AlphaDFN (3.05x1.77)
Produkt ist nicht verfügbar
Mindestbestellmenge: 8000 Stücke
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AOC3860C AOC3860C.pdf
AOC3860C
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 12V 25A 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, No Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W (Ta)
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 36nC @ 4.5V
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: 6-AlphaDFN (3.05x1.77)
Produkt ist nicht verfügbar
Mindestbestellmenge: 8000 Stücke
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AOC3860C AOC3860C.pdf
AOC3860C
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 12V 25A 6DFN
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, No Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W (Ta)
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 36nC @ 4.5V
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: 6-AlphaDFN (3.05x1.77)
auf Bestellung 7990 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
8+2.93 EUR
12+1.84 EUR
100+1.24 EUR
500+0.96 EUR
1000+0.88 EUR
2000+0.86 EUR
Mindestbestellmenge: 8 Stücke
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AOC3862
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-XDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W
Gate Charge (Qg) (Max) @ Vgs: 46nC @ 4.5V
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Supplier Device Package: 6-DFN (3.55x1.77)
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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AOC3864 AOC3864.pdf
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2 N-CHANNEL 6DFN
Produkt ist nicht verfügbar
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AOC3870C AOC3870C.pdf
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 12V 25A 10DFN
Packaging: Tape & Reel (TR)
Package / Case: 10-SMD, No Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W (Ta)
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 4.5V
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: 10-AlphaDFN (3.01x1.52)
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
8000+0.65 EUR
Mindestbestellmenge: 8000 Stücke
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AOC3870C AOC3870C.pdf
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 12V 25A 10DFN
Packaging: Cut Tape (CT)
Package / Case: 10-SMD, No Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W (Ta)
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 4.5V
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: 10-AlphaDFN (3.01x1.52)
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
13+1.62 EUR
15+1.44 EUR
25+1.37 EUR
100+1.12 EUR
250+1.05 EUR
500+0.93 EUR
1000+0.74 EUR
2500+0.68 EUR
Mindestbestellmenge: 13 Stücke
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AOC3878 AOC3878.pdf
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 12V 35A 10DFN
Packaging: Tape & Reel (TR)
Package / Case: 10-SMD, No Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W (Ta)
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 35A (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 60nC @ 4.5V
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: 10-AlphaDFN (3.55x1.77)
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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AOC4810 AOSGreenPolicy.pdf
AOC4810
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 8ALPHADFN
Packaging: Tape & Reel (TR)
Package / Case: 8-XFLGA Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 900mW
Input Capacitance (Ciss) (Max) @ Vds: 1130pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
FET Feature: Logic Level Gate
Supplier Device Package: 8-AlphaDFN (3.2x2)
Produkt ist nicht verfügbar
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AOC4810 AOSGreenPolicy.pdf
AOC4810
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 8ALPHADFN
Packaging: Cut Tape (CT)
Package / Case: 8-XFLGA Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 900mW
Input Capacitance (Ciss) (Max) @ Vds: 1130pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
FET Feature: Logic Level Gate
Supplier Device Package: 8-AlphaDFN (3.2x2)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
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