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AOB7S60L AOB7S60L Alpha & Omega Semiconductor Inc. AOB7S60.pdf Description: MOSFET N-CH 600V 7A TO263
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AOB7S60L AOB7S60L Alpha & Omega Semiconductor Inc. AOB7S60.pdf Description: MOSFET N-CH 600V 7A TO263
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AOB7S65L AOB7S65L Alpha & Omega Semiconductor Inc. TO263.pdf Description: MOSFET N-CH 650V 7A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 3.5A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 9.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 434 pF @ 100 V
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AOB7S65L AOB7S65L Alpha & Omega Semiconductor Inc. TO263.pdf Description: MOSFET N-CH 650V 7A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 3.5A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 9.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 434 pF @ 100 V
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AOB9N70L AOB9N70L Alpha & Omega Semiconductor Inc. AOB9N70L.pdf Description: MOSFET N-CH 700V 9A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 4.5A, 10V
Power Dissipation (Max): 236W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1630 pF @ 25 V
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AOB9N70L AOB9N70L Alpha & Omega Semiconductor Inc. AOB9N70L.pdf Description: MOSFET N-CH 700V 9A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 4.5A, 10V
Power Dissipation (Max): 236W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1630 pF @ 25 V
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AOC2401 AOC2401 Alpha & Omega Semiconductor Inc. AOC2401.pdf Description: MOSFET P-CH 30V 3A 4ALPHADFN
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 41mOhm @ 1.5A, 10V
Power Dissipation (Max): 550mW (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: 4-AlphaDFN (1.57x1.57)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1327 pF @ 15 V
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AOC2403 AOC2403 Alpha & Omega Semiconductor Inc. AOC2403.pdf Description: MOSFET P-CH 20V 1.8A 4ALPHADFN
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
Rds On (Max) @ Id, Vgs: 95mOhm @ 1A, 4.5V
Power Dissipation (Max): 450mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 4-AlphaDFN (0.97x0.97)
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 405 pF @ 10 V
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AOC2403 AOC2403 Alpha & Omega Semiconductor Inc. AOC2403.pdf Description: MOSFET P-CH 20V 1.8A 4ALPHADFN
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
Rds On (Max) @ Id, Vgs: 95mOhm @ 1A, 4.5V
Power Dissipation (Max): 450mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 4-AlphaDFN (0.97x0.97)
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 405 pF @ 10 V
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AOC2411 AOC2411 Alpha & Omega Semiconductor Inc. AOC2411.pdf Description: MOSFET P-CH 30V 3.4A 4WLCSP
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AOC2411 AOC2411 Alpha & Omega Semiconductor Inc. AOC2411.pdf Description: MOSFET P-CH 30V 3.4A 4WLCSP
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AOC2411 AOC2411 Alpha & Omega Semiconductor Inc. AOC2411.pdf Description: MOSFET P-CH 30V 3.4A 4WLCSP
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AOC2412 AOC2412 Alpha & Omega Semiconductor Inc. AOC2412.pdf Description: MOSFET N-CH 20V 4.5A 4WLCSP
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AOC2413 AOC2413 Alpha & Omega Semiconductor Inc. AOC2413.pdf Description: MOSFET P-CH 8V 3.5A 4ALPHADFN
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AOC2414 AOC2414 Alpha & Omega Semiconductor Inc. AOC2414.pdf Description: MOSFET N-CH 8V 4.5A MCSP1.57
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AOC2415 AOC2415 Alpha & Omega Semiconductor Inc. AOC2415.pdf Description: MOSFET P-CH 20V 3.5A 4WLCSP
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AOC2417 AOC2417 Alpha & Omega Semiconductor Inc. AOC2417.pdf Description: MOSFET P-CH 20V 3.5A 4WLCSP
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AOC2421 AOC2421 Alpha & Omega Semiconductor Inc. AOC2421.pdf Description: MOSFET P-CH 8V 2.5A 4ALPHADFN
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 62mOhm @ 1.5A, 2.5V
Power Dissipation (Max): 600mW (Ta)
Vgs(th) (Max) @ Id: 700mV @ 250µA
Supplier Device Package: 4-AlphaDFN (0.97x0.97)
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 2.5V
Vgs (Max): ±5V
Drain to Source Voltage (Vdss): 8 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 752 pF @ 4 V
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AOC2422 AOC2422 Alpha & Omega Semiconductor Inc. AOC2422.pdf Description: MOSFET N-CH 8V 3.5A 4WLCSP
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AOC2423 AOC2423 Alpha & Omega Semiconductor Inc. AOC2423.pdf Description: MOSFET P-CH 20V 2A 4WLCSP
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AOC2800 AOC2800 Alpha & Omega Semiconductor Inc. Description: MOSFET 2N-CH 4WLCSP
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AOC2802 AOC2802 Alpha & Omega Semiconductor Inc. Description: MOSFET 2N-CH 4WLCSP
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AOC2802_001 Alpha & Omega Semiconductor Inc. Description: MOSFET 2N-CH 4WLCSP
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AOC2804 AOC2804 Alpha & Omega Semiconductor Inc. AOC2804.pdf Description: MOSFET 2N-CH 20V
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AOC2804 AOC2804 Alpha & Omega Semiconductor Inc. AOC2804.pdf Description: MOSFET 2N-CH
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AOC2804B AOC2804B Alpha & Omega Semiconductor Inc. AOC2804B.pdf Description: MOSFET 2 N-CHANNEL 4DFN
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AOC2806 AOC2806 Alpha & Omega Semiconductor Inc. Description: MOSFET 2N-CH 20V 4DFN
Packaging: Cut Tape (CT)
Package / Case: 4-XDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 700mW
Gate Charge (Qg) (Max) @ Vgs: 12.5nC @ 4.5V
Supplier Device Package: 4-DFN (1.7x1.7)
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AOC2806 AOC2806 Alpha & Omega Semiconductor Inc. Description: MOSFET 2N-CH 20V 4DFN
Packaging: Tape & Reel (TR)
Package / Case: 4-XDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 700mW
Gate Charge (Qg) (Max) @ Vgs: 12.5nC @ 4.5V
Supplier Device Package: 4-DFN (1.7x1.7)
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AOC2870 AOC2870 Alpha & Omega Semiconductor Inc. AOC2870.pdf Description: MOSFET 2N-CH 4DFN
Packaging: Tape & Reel (TR)
Package / Case: 4-XDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W
Gate Charge (Qg) (Max) @ Vgs: 11.5nC @ 4.5V
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: 4-DFN (1.7x1.7)
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AOC2870 AOC2870 Alpha & Omega Semiconductor Inc. AOC2870.pdf Description: MOSFET 2N-CH 4DFN
Packaging: Cut Tape (CT)
Package / Case: 4-XDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W
Gate Charge (Qg) (Max) @ Vgs: 11.5nC @ 4.5V
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: 4-DFN (1.7x1.7)
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AOC3860A Alpha & Omega Semiconductor Inc. combine-support-documents?resources=1604 Description: MOSFET 2N-CH 12V 25A 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, No Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W (Ta)
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 44nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-AlphaDFN (3.05x1.77)
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AOC3860C AOC3860C Alpha & Omega Semiconductor Inc. AOC3860C.pdf Description: MOSFET 2N-CH 12V 25A 6DFN
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, No Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W (Ta)
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 36nC @ 4.5V
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: 6-AlphaDFN (3.05x1.77)
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AOC3860C AOC3860C Alpha & Omega Semiconductor Inc. AOC3860C.pdf Description: MOSFET 2N-CH 12V 25A 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, No Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W (Ta)
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 36nC @ 4.5V
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: 6-AlphaDFN (3.05x1.77)
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AOC3862 Alpha & Omega Semiconductor Inc. Description: MOSFET 2N-CH 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-XDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W
Gate Charge (Qg) (Max) @ Vgs: 46nC @ 4.5V
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Supplier Device Package: 6-DFN (3.55x1.77)
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AOC3864 Alpha & Omega Semiconductor Inc. AOC3864.pdf Description: MOSFET 2 N-CHANNEL 6DFN
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AOC3870C Alpha & Omega Semiconductor Inc. AOC3870C.pdf Description: MOSFET 2N-CH 12V 25A 10DFN
Packaging: Cut Tape (CT)
Package / Case: 10-SMD, No Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W (Ta)
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 4.5V
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: 10-AlphaDFN (3.01x1.52)
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1000+0.62 EUR
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AOC3870C Alpha & Omega Semiconductor Inc. AOC3870C.pdf Description: MOSFET 2N-CH 12V 25A 10DFN
Packaging: Tape & Reel (TR)
Package / Case: 10-SMD, No Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W (Ta)
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 4.5V
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: 10-AlphaDFN (3.01x1.52)
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8000+0.55 EUR
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AOC3878 Alpha & Omega Semiconductor Inc. AOC3878.pdf Description: MOSFET 2N-CH 12V 35A 10DFN
Packaging: Tape & Reel (TR)
Package / Case: 10-SMD, No Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W (Ta)
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 35A (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 60nC @ 4.5V
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: 10-AlphaDFN (3.55x1.77)
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AOC4810 AOC4810 Alpha & Omega Semiconductor Inc. AOSGreenPolicy.pdf Description: MOSFET 2N-CH 8ALPHADFN
Packaging: Tape & Reel (TR)
Package / Case: 8-XFLGA Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 900mW
Input Capacitance (Ciss) (Max) @ Vds: 1130pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
FET Feature: Logic Level Gate
Supplier Device Package: 8-AlphaDFN (3.2x2)
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AOC4810 AOC4810 Alpha & Omega Semiconductor Inc. AOSGreenPolicy.pdf Description: MOSFET 2N-CH 8ALPHADFN
Packaging: Cut Tape (CT)
Package / Case: 8-XFLGA Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 900mW
Input Capacitance (Ciss) (Max) @ Vds: 1130pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
FET Feature: Logic Level Gate
Supplier Device Package: 8-AlphaDFN (3.2x2)
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AOCA24106C Alpha & Omega Semiconductor Inc. AOCA24106C.pdf Description: MOSFET 2N-CH 12V 20A 6ALPHADFN
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, No Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.7W (Ta)
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 4A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 4.5V
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: 6-AlphaDFN (1.9x1.6)
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AOCA24106C Alpha & Omega Semiconductor Inc. AOCA24106C.pdf Description: MOSFET 2N-CH 12V 20A 6ALPHADFN
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, No Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.7W (Ta)
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 4A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 4.5V
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: 6-AlphaDFN (1.9x1.6)
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
12+1.55 EUR
13+1.39 EUR
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AOCA24106E Alpha & Omega Semiconductor Inc. AOCA24106E.pdf Description: MOSFET 2N-CH 12V 20A 6ALPHADFN
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, No Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.7W (Ta)
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 4A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 4.5V
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: 6-AlphaDFN (1.9x1.6)
Produkt ist nicht verfügbar
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AOCA24106E Alpha & Omega Semiconductor Inc. AOCA24106E.pdf Description: MOSFET 2N-CH 12V 20A 6ALPHADFN
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, No Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.7W (Ta)
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 4A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 4.5V
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: 6-AlphaDFN (1.9x1.6)
auf Bestellung 7980 Stücke:
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12+1.55 EUR
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500+0.84 EUR
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AOCA32106E Alpha & Omega Semiconductor Inc. AOCA32106E.pdf Description: MOSFET 2N-CH 12V 25A 10DFN
Packaging: Tape & Reel (TR)
Package / Case: 10-SMD, No Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.8W (Ta)
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
Rds On (Max) @ Id, Vgs: 3.4Ohm @ 5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 4.5V
FET Feature: Standard
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: 10-AlphaDFN (1.84x1.96)
Part Status: Active
Produkt ist nicht verfügbar
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AOCA32108E Alpha & Omega Semiconductor Inc. Description: MOSFET 2N-CH 12V 25A 10DFN
Packaging: Tape & Reel (TR)
Package / Case: 10-SMD, No Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W (Ta)
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 4.5V
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: 10-AlphaDFN (3.01x1.52)
Part Status: Active
Produkt ist nicht verfügbar
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AOCA32108E Alpha & Omega Semiconductor Inc. Description: MOSFET 2N-CH 12V 25A 10DFN
Packaging: Cut Tape (CT)
Package / Case: 10-SMD, No Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W (Ta)
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 4.5V
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: 10-AlphaDFN (3.01x1.52)
Part Status: Active
Produkt ist nicht verfügbar
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AOCA32112E AOCA32112E Alpha & Omega Semiconductor Inc. Description: MOSFET 2N-CH 20V 4.5A 4DFN
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Rds On (Max) @ Id, Vgs: 48mOhm @ 3A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 11.5nC @ 4.5V
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: 4-AlphaDFN (0.97x0.97)
Part Status: Active
Produkt ist nicht verfügbar
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AOCA32112E AOCA32112E Alpha & Omega Semiconductor Inc. Description: MOSFET 2N-CH 20V 4.5A 4DFN
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Rds On (Max) @ Id, Vgs: 48mOhm @ 3A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 11.5nC @ 4.5V
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: 4-AlphaDFN (0.97x0.97)
Part Status: Active
Produkt ist nicht verfügbar
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AOCA32116E Alpha & Omega Semiconductor Inc. Description: MOSFET 2N-CH 20V 6A 4DFN
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.7W (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 36mOhm @ 3A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 5.5nC @ 4.5V
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: 4-AlphaDFN (1.2x1.2)
Part Status: Active
Produkt ist nicht verfügbar
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AOCA32116E Alpha & Omega Semiconductor Inc. Description: MOSFET 2N-CH 20V 6A 4DFN
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.7W (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 36mOhm @ 3A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 5.5nC @ 4.5V
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: 4-AlphaDFN (1.2x1.2)
Part Status: Active
Produkt ist nicht verfügbar
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AOCA32301 Alpha & Omega Semiconductor Inc. AOCA32301.pdf Description: MOSFET 2N-CH 30V 9A 4ALPHADFN
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.9W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 18mOhm @ 4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 24.5nC @ 10V
Vgs(th) (Max) @ Id: 1.9V @ 250µA
Supplier Device Package: 4-AlphaDFN (1.9x1.3)
Produkt ist nicht verfügbar
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AOCA33102E Alpha & Omega Semiconductor Inc. Description: MOSFET 2N-CH 12V 50A 14DFN
Packaging: Tape & Reel (TR)
Package / Case: 14-SMD, No Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel, Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 4.2W (Ta)
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 50A (Ta)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 68nC @ 4.5V
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: 14-AlphaDFN (3x2.74)
Produkt ist nicht verfügbar
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AOCA33103E AOCA33103E Alpha & Omega Semiconductor Inc. AOCA33103E.pdf Description: MOSFET 2N-CH 12V 40A 10DFN
Packaging: Cut Tape (CT)
Package / Case: 10-SMD, No Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W (Ta)
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 45nC @ 4.5V
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: 10-AlphaDFN (2.52x2.52)
auf Bestellung 7585 Stücke:
Lieferzeit 10-14 Tag (e)
7+2.53 EUR
11+1.61 EUR
100+1.07 EUR
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AOCA33103E AOCA33103E Alpha & Omega Semiconductor Inc. AOCA33103E.pdf Description: MOSFET 2N-CH 12V 40A 10DFN
Packaging: Tape & Reel (TR)
Package / Case: 10-SMD, No Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W (Ta)
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 45nC @ 4.5V
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: 10-AlphaDFN (2.52x2.52)
Produkt ist nicht verfügbar
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AOCA33104A Alpha & Omega Semiconductor Inc. Description: MOSFET 2N-CH 12V 30A 10DFN
Packaging: Tape & Reel (TR)
Package / Case: 10-SMD, No Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W (Ta)
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 4.5V
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: 10-AlphaDFN (2.98x1.49)
Produkt ist nicht verfügbar
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AOCA33104E Alpha & Omega Semiconductor Inc. AOCA33104E_Rev1.0_Jun2020.pdf Description: MOSFET 2N-CH 12V 30A 10DFN
Packaging: Tape & Reel (TR)
Package / Case: 10-SMD, No Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W (Ta)
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 36nC @ 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: 10-AlphaDFN (2.98x1.49)
Produkt ist nicht verfügbar
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AOCA36102E Alpha & Omega Semiconductor Inc. AOCA36102E.pdf Description: MOSFET 2N-CH 22V 30A 10DFN
Packaging: Tape & Reel (TR)
Package / Case: 10-SMD, No Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W
Drain to Source Voltage (Vdss): 22V
Current - Continuous Drain (Id) @ 25°C: 30A
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 37nC @ 4.5V
FET Feature: Standard
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Supplier Device Package: 10-AlphaDFN (3.4x1.96)
Produkt ist nicht verfügbar
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AOCR33105E Alpha & Omega Semiconductor Inc. Description: MOSFET 2N-CH 12V 30A 10MRIGIDCSP
Packaging: Tape & Reel (TR)
Package / Case: 10-SMD, No Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel, Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W (Ta)
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
Rds On (Max) @ Id, Vgs: 3mOhm @ 5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 4.5V
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: 10-MRigidCSP (2.08x1.45)
Produkt ist nicht verfügbar
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AOD11S60 AOD11S60 Alpha & Omega Semiconductor Inc. AOD11S60.pdf Description: MOSFET N-CH 600V 11A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 399mOhm @ 3.8A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 4.1V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 545 pF @ 100 V
auf Bestellung 9995 Stücke:
Lieferzeit 10-14 Tag (e)
4+4.96 EUR
10+3.22 EUR
100+2.22 EUR
500+1.80 EUR
1000+1.66 EUR
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AOB7S60L AOB7S60.pdf
AOB7S60L
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 600V 7A TO263
Produkt ist nicht verfügbar
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AOB7S60L AOB7S60.pdf
AOB7S60L
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 600V 7A TO263
Produkt ist nicht verfügbar
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AOB7S65L TO263.pdf
AOB7S65L
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 650V 7A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 3.5A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 9.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 434 pF @ 100 V
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AOB7S65L TO263.pdf
AOB7S65L
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 650V 7A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 3.5A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 9.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 434 pF @ 100 V
Produkt ist nicht verfügbar
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AOB9N70L AOB9N70L.pdf
AOB9N70L
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 700V 9A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 4.5A, 10V
Power Dissipation (Max): 236W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1630 pF @ 25 V
Produkt ist nicht verfügbar
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AOB9N70L AOB9N70L.pdf
AOB9N70L
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 700V 9A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 4.5A, 10V
Power Dissipation (Max): 236W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1630 pF @ 25 V
Produkt ist nicht verfügbar
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AOC2401 AOC2401.pdf
AOC2401
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET P-CH 30V 3A 4ALPHADFN
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 41mOhm @ 1.5A, 10V
Power Dissipation (Max): 550mW (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: 4-AlphaDFN (1.57x1.57)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1327 pF @ 15 V
Produkt ist nicht verfügbar
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AOC2403 AOC2403.pdf
AOC2403
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET P-CH 20V 1.8A 4ALPHADFN
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
Rds On (Max) @ Id, Vgs: 95mOhm @ 1A, 4.5V
Power Dissipation (Max): 450mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 4-AlphaDFN (0.97x0.97)
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 405 pF @ 10 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AOC2403 AOC2403.pdf
AOC2403
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET P-CH 20V 1.8A 4ALPHADFN
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
Rds On (Max) @ Id, Vgs: 95mOhm @ 1A, 4.5V
Power Dissipation (Max): 450mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 4-AlphaDFN (0.97x0.97)
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 405 pF @ 10 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AOC2411 AOC2411.pdf
AOC2411
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET P-CH 30V 3.4A 4WLCSP
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AOC2411 AOC2411.pdf
AOC2411
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET P-CH 30V 3.4A 4WLCSP
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AOC2411 AOC2411.pdf
AOC2411
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET P-CH 30V 3.4A 4WLCSP
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AOC2412 AOC2412.pdf
AOC2412
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 20V 4.5A 4WLCSP
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AOC2413 AOC2413.pdf
AOC2413
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET P-CH 8V 3.5A 4ALPHADFN
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AOC2414 AOC2414.pdf
AOC2414
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 8V 4.5A MCSP1.57
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AOC2415 AOC2415.pdf
AOC2415
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET P-CH 20V 3.5A 4WLCSP
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AOC2417 AOC2417.pdf
AOC2417
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET P-CH 20V 3.5A 4WLCSP
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AOC2421 AOC2421.pdf
AOC2421
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET P-CH 8V 2.5A 4ALPHADFN
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 62mOhm @ 1.5A, 2.5V
Power Dissipation (Max): 600mW (Ta)
Vgs(th) (Max) @ Id: 700mV @ 250µA
Supplier Device Package: 4-AlphaDFN (0.97x0.97)
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 2.5V
Vgs (Max): ±5V
Drain to Source Voltage (Vdss): 8 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 752 pF @ 4 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AOC2422 AOC2422.pdf
AOC2422
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 8V 3.5A 4WLCSP
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AOC2423 AOC2423.pdf
AOC2423
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET P-CH 20V 2A 4WLCSP
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AOC2800
AOC2800
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 4WLCSP
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AOC2802
AOC2802
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 4WLCSP
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AOC2802_001
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 4WLCSP
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AOC2804 AOC2804.pdf
AOC2804
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 20V
auf Bestellung 3158 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
AOC2804 AOC2804.pdf
AOC2804
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AOC2804B AOC2804B.pdf
AOC2804B
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2 N-CHANNEL 4DFN
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AOC2806
AOC2806
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 20V 4DFN
Packaging: Cut Tape (CT)
Package / Case: 4-XDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 700mW
Gate Charge (Qg) (Max) @ Vgs: 12.5nC @ 4.5V
Supplier Device Package: 4-DFN (1.7x1.7)
auf Bestellung 391 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
14+1.32 EUR
21+0.88 EUR
100+0.60 EUR
Mindestbestellmenge: 14
Im Einkaufswagen  Stück im Wert von  UAH
AOC2806
AOC2806
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 20V 4DFN
Packaging: Tape & Reel (TR)
Package / Case: 4-XDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 700mW
Gate Charge (Qg) (Max) @ Vgs: 12.5nC @ 4.5V
Supplier Device Package: 4-DFN (1.7x1.7)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AOC2870 AOC2870.pdf
AOC2870
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 4DFN
Packaging: Tape & Reel (TR)
Package / Case: 4-XDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W
Gate Charge (Qg) (Max) @ Vgs: 11.5nC @ 4.5V
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: 4-DFN (1.7x1.7)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.57 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
AOC2870 AOC2870.pdf
AOC2870
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 4DFN
Packaging: Cut Tape (CT)
Package / Case: 4-XDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W
Gate Charge (Qg) (Max) @ Vgs: 11.5nC @ 4.5V
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: 4-DFN (1.7x1.7)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
12+1.50 EUR
14+1.30 EUR
100+0.90 EUR
500+0.75 EUR
1000+0.64 EUR
Mindestbestellmenge: 12
Im Einkaufswagen  Stück im Wert von  UAH
AOC3860A combine-support-documents?resources=1604
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 12V 25A 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, No Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W (Ta)
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 44nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-AlphaDFN (3.05x1.77)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AOC3860C AOC3860C.pdf
AOC3860C
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 12V 25A 6DFN
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, No Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W (Ta)
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 36nC @ 4.5V
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: 6-AlphaDFN (3.05x1.77)
auf Bestellung 7990 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.46 EUR
12+1.55 EUR
100+1.04 EUR
500+0.81 EUR
1000+0.74 EUR
2000+0.72 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
AOC3860C AOC3860C.pdf
AOC3860C
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 12V 25A 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, No Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W (Ta)
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 36nC @ 4.5V
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: 6-AlphaDFN (3.05x1.77)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AOC3862
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-XDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W
Gate Charge (Qg) (Max) @ Vgs: 46nC @ 4.5V
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Supplier Device Package: 6-DFN (3.55x1.77)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AOC3864 AOC3864.pdf
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2 N-CHANNEL 6DFN
Produkt ist nicht verfügbar
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AOC3870C AOC3870C.pdf
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 12V 25A 10DFN
Packaging: Cut Tape (CT)
Package / Case: 10-SMD, No Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W (Ta)
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 4.5V
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: 10-AlphaDFN (3.01x1.52)
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
13+1.36 EUR
15+1.21 EUR
25+1.15 EUR
100+0.94 EUR
250+0.88 EUR
500+0.78 EUR
1000+0.62 EUR
2500+0.57 EUR
Mindestbestellmenge: 13
Im Einkaufswagen  Stück im Wert von  UAH
AOC3870C AOC3870C.pdf
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 12V 25A 10DFN
Packaging: Tape & Reel (TR)
Package / Case: 10-SMD, No Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W (Ta)
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 4.5V
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: 10-AlphaDFN (3.01x1.52)
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8000+0.55 EUR
Mindestbestellmenge: 8000
Im Einkaufswagen  Stück im Wert von  UAH
AOC3878 AOC3878.pdf
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 12V 35A 10DFN
Packaging: Tape & Reel (TR)
Package / Case: 10-SMD, No Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W (Ta)
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 35A (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 60nC @ 4.5V
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: 10-AlphaDFN (3.55x1.77)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AOC4810 AOSGreenPolicy.pdf
AOC4810
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 8ALPHADFN
Packaging: Tape & Reel (TR)
Package / Case: 8-XFLGA Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 900mW
Input Capacitance (Ciss) (Max) @ Vds: 1130pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
FET Feature: Logic Level Gate
Supplier Device Package: 8-AlphaDFN (3.2x2)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AOC4810 AOSGreenPolicy.pdf
AOC4810
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 8ALPHADFN
Packaging: Cut Tape (CT)
Package / Case: 8-XFLGA Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 900mW
Input Capacitance (Ciss) (Max) @ Vds: 1130pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
FET Feature: Logic Level Gate
Supplier Device Package: 8-AlphaDFN (3.2x2)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AOCA24106C AOCA24106C.pdf
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 12V 20A 6ALPHADFN
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, No Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.7W (Ta)
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 4A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 4.5V
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: 6-AlphaDFN (1.9x1.6)
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8000+0.63 EUR
Mindestbestellmenge: 8000
Im Einkaufswagen  Stück im Wert von  UAH
AOCA24106C AOCA24106C.pdf
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 12V 20A 6ALPHADFN
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, No Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.7W (Ta)
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 4A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 4.5V
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: 6-AlphaDFN (1.9x1.6)
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
12+1.55 EUR
13+1.39 EUR
25+1.32 EUR
100+1.08 EUR
250+1.01 EUR
500+0.89 EUR
1000+0.71 EUR
2500+0.66 EUR
Mindestbestellmenge: 12
Im Einkaufswagen  Stück im Wert von  UAH
AOCA24106E AOCA24106E.pdf
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 12V 20A 6ALPHADFN
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, No Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.7W (Ta)
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 4A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 4.5V
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: 6-AlphaDFN (1.9x1.6)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AOCA24106E AOCA24106E.pdf
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 12V 20A 6ALPHADFN
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, No Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.7W (Ta)
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 4A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 4.5V
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: 6-AlphaDFN (1.9x1.6)
auf Bestellung 7980 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
12+1.55 EUR
14+1.27 EUR
100+0.99 EUR
500+0.84 EUR
1000+0.68 EUR
2000+0.64 EUR
Mindestbestellmenge: 12
Im Einkaufswagen  Stück im Wert von  UAH
AOCA32106E AOCA32106E.pdf
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 12V 25A 10DFN
Packaging: Tape & Reel (TR)
Package / Case: 10-SMD, No Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.8W (Ta)
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
Rds On (Max) @ Id, Vgs: 3.4Ohm @ 5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 4.5V
FET Feature: Standard
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: 10-AlphaDFN (1.84x1.96)
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AOCA32108E
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 12V 25A 10DFN
Packaging: Tape & Reel (TR)
Package / Case: 10-SMD, No Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W (Ta)
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 4.5V
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: 10-AlphaDFN (3.01x1.52)
Part Status: Active
Produkt ist nicht verfügbar
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AOCA32108E
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 12V 25A 10DFN
Packaging: Cut Tape (CT)
Package / Case: 10-SMD, No Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W (Ta)
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 4.5V
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: 10-AlphaDFN (3.01x1.52)
Part Status: Active
Produkt ist nicht verfügbar
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AOCA32112E
AOCA32112E
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 20V 4.5A 4DFN
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Rds On (Max) @ Id, Vgs: 48mOhm @ 3A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 11.5nC @ 4.5V
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: 4-AlphaDFN (0.97x0.97)
Part Status: Active
Produkt ist nicht verfügbar
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AOCA32112E
AOCA32112E
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 20V 4.5A 4DFN
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Rds On (Max) @ Id, Vgs: 48mOhm @ 3A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 11.5nC @ 4.5V
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: 4-AlphaDFN (0.97x0.97)
Part Status: Active
Produkt ist nicht verfügbar
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AOCA32116E
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 20V 6A 4DFN
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.7W (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 36mOhm @ 3A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 5.5nC @ 4.5V
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: 4-AlphaDFN (1.2x1.2)
Part Status: Active
Produkt ist nicht verfügbar
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AOCA32116E
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 20V 6A 4DFN
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.7W (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 36mOhm @ 3A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 5.5nC @ 4.5V
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: 4-AlphaDFN (1.2x1.2)
Part Status: Active
Produkt ist nicht verfügbar
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AOCA32301 AOCA32301.pdf
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 30V 9A 4ALPHADFN
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.9W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 18mOhm @ 4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 24.5nC @ 10V
Vgs(th) (Max) @ Id: 1.9V @ 250µA
Supplier Device Package: 4-AlphaDFN (1.9x1.3)
Produkt ist nicht verfügbar
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AOCA33102E
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 12V 50A 14DFN
Packaging: Tape & Reel (TR)
Package / Case: 14-SMD, No Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel, Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 4.2W (Ta)
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 50A (Ta)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 68nC @ 4.5V
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: 14-AlphaDFN (3x2.74)
Produkt ist nicht verfügbar
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AOCA33103E AOCA33103E.pdf
AOCA33103E
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 12V 40A 10DFN
Packaging: Cut Tape (CT)
Package / Case: 10-SMD, No Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W (Ta)
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 45nC @ 4.5V
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: 10-AlphaDFN (2.52x2.52)
auf Bestellung 7585 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.53 EUR
11+1.61 EUR
100+1.07 EUR
500+0.85 EUR
1000+0.77 EUR
2000+0.76 EUR
Mindestbestellmenge: 7
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AOCA33103E AOCA33103E.pdf
AOCA33103E
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 12V 40A 10DFN
Packaging: Tape & Reel (TR)
Package / Case: 10-SMD, No Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W (Ta)
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 45nC @ 4.5V
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: 10-AlphaDFN (2.52x2.52)
Produkt ist nicht verfügbar
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AOCA33104A
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 12V 30A 10DFN
Packaging: Tape & Reel (TR)
Package / Case: 10-SMD, No Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W (Ta)
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 4.5V
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: 10-AlphaDFN (2.98x1.49)
Produkt ist nicht verfügbar
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AOCA33104E AOCA33104E_Rev1.0_Jun2020.pdf
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 12V 30A 10DFN
Packaging: Tape & Reel (TR)
Package / Case: 10-SMD, No Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W (Ta)
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 36nC @ 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: 10-AlphaDFN (2.98x1.49)
Produkt ist nicht verfügbar
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AOCA36102E AOCA36102E.pdf
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 22V 30A 10DFN
Packaging: Tape & Reel (TR)
Package / Case: 10-SMD, No Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W
Drain to Source Voltage (Vdss): 22V
Current - Continuous Drain (Id) @ 25°C: 30A
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 37nC @ 4.5V
FET Feature: Standard
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Supplier Device Package: 10-AlphaDFN (3.4x1.96)
Produkt ist nicht verfügbar
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AOCR33105E
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 12V 30A 10MRIGIDCSP
Packaging: Tape & Reel (TR)
Package / Case: 10-SMD, No Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel, Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W (Ta)
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
Rds On (Max) @ Id, Vgs: 3mOhm @ 5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 4.5V
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: 10-MRigidCSP (2.08x1.45)
Produkt ist nicht verfügbar
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AOD11S60 AOD11S60.pdf
AOD11S60
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 600V 11A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 399mOhm @ 3.8A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 4.1V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 545 pF @ 100 V
auf Bestellung 9995 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.96 EUR
10+3.22 EUR
100+2.22 EUR
500+1.80 EUR
1000+1.66 EUR
Mindestbestellmenge: 4
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