Produkte > ANALOG POWER INC. > Alle Produkte des Herstellers ANALOG POWER INC. (201) > Seite 2 nach 4
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AM4432N | Analog Power Inc. |
![]() Packaging: Bulk Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13.8A (Ta) Rds On (Max) @ Id, Vgs: 11mOhm @ 16.8A, 4.5V Power Dissipation (Max): 3.1W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 8-SO Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2047 pF @ 15 V |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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AM4434N-CT | Analog Power Inc. |
![]() Packaging: Bulk Package / Case: SOIC-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18.6A (Ta) Rds On (Max) @ Id, Vgs: 8mOhm @ 16.1A, 2.5V Power Dissipation (Max): 3.1W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOIC-8 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): 12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2586 pF @ 15 V |
auf Bestellung 550 Stücke: Lieferzeit 10-14 Tag (e) |
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AM4436N | Analog Power Inc. |
![]() Packaging: Bulk Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Ta) Rds On (Max) @ Id, Vgs: 4.6mOhm @ 22A, 10V Power Dissipation (Max): 3.1W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 8-SO Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 7686 pF @ 15 V |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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AM4466N | Analog Power Inc. |
Description: MOSFET N-CH 60V 15A SO-8 Packaging: Bulk Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Ta) Rds On (Max) @ Id, Vgs: 8.9mOhm @ 10A, 10V Power Dissipation (Max): 3.1W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 8-SO Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 4107 pF @ 15 V |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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AM4468N | Analog Power Inc. |
![]() Packaging: Bulk Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Ta) Rds On (Max) @ Id, Vgs: 11mOhm @ 10A, 10V Power Dissipation (Max): 3.1W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SO-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 3193 pF @ 15 V |
auf Bestellung 1200 Stücke: Lieferzeit 10-14 Tag (e) |
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AM4480N | Analog Power Inc. |
![]() Packaging: Bulk Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.1A (Ta) Rds On (Max) @ Id, Vgs: 41mOhm @ 5.4A, 10V Power Dissipation (Max): 3.1W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 8-SO Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 19.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1522 pF @ 15 V |
auf Bestellung 700 Stücke: Lieferzeit 10-14 Tag (e) |
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AM4484N | Analog Power Inc. |
![]() Packaging: Bulk Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Ta) Rds On (Max) @ Id, Vgs: 12mOhm @ 8A, 10V Power Dissipation (Max): 3.1W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SO-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 7546 pF @ 15 V |
auf Bestellung 2000 Stücke: Lieferzeit 10-14 Tag (e) |
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AM4490N-CT | Analog Power Inc. |
![]() Packaging: Bulk Package / Case: SOIC-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta) Rds On (Max) @ Id, Vgs: 92mOhm @ 3.3A, 4.5V Power Dissipation (Max): 3.1W (Ta) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: SOIC-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 17.7 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 990 pF @ 15 V |
auf Bestellung 4700 Stücke: Lieferzeit 10-14 Tag (e) |
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AM4492N | Analog Power Inc. |
![]() Packaging: Bulk Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Ta) Rds On (Max) @ Id, Vgs: 26mOhm @ 9A, 10V Power Dissipation (Max): 3.1W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 8-SO Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 15.4 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1216 pF @ 15 V |
auf Bestellung 800 Stücke: Lieferzeit 10-14 Tag (e) |
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AM4496N | Analog Power Inc. |
![]() Packaging: Bulk Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.6A (Ta) Rds On (Max) @ Id, Vgs: 36mOhm @ 4A, 10V Power Dissipation (Max): 3.1W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 8-SO Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 5.3 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 414 pF @ 50 V |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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AM4499P | Analog Power Inc. |
![]() Packaging: Bulk Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta) Rds On (Max) @ Id, Vgs: 45mOhm @ 5.4A, 10V Power Dissipation (Max): 3.1W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 8-SO Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1725 pF @ 15 V |
auf Bestellung 2300 Stücke: Lieferzeit 10-14 Tag (e) |
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AM4502C | Analog Power Inc. |
![]() Packaging: Bulk Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.1W (Ta) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta), 7.9A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 1456pF @ 15V, 1934pF @ 15V Rds On (Max) @ Id, Vgs: 23mOhm @ 8.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V, 28nC @ 10V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 8-SO |
auf Bestellung 2000 Stücke: Lieferzeit 10-14 Tag (e) |
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AM4502CE | Analog Power Inc. |
![]() Packaging: Bulk Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.1W (Ta) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta), 7.9A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 1309pF @ 15V, 1663pF @ 15V Rds On (Max) @ Id, Vgs: 16mOhm @ 4.7A, 10V, 23mOhm @ 3.9A, 10V Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V, 23nC @ 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 8-SO |
auf Bestellung 1 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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AM4512C | Analog Power Inc. |
![]() Packaging: Bulk Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.1W (Ta) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6.7A (Ta), 5.2A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 519pF @ 15V, 604pF @ 15V Rds On (Max) @ Id, Vgs: 31mOhm @ 4.7A, 10V, 52mOhm @ 4.2A, 10V Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V, 7nC @ 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 8-SO |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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AM4536C | Analog Power Inc. |
![]() Packaging: Bulk Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.1W (Ta) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7.1A (Ta), 6A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 519pF @ 15V, 597pF @ 15V Rds On (Max) @ Id, Vgs: 28mOhm @ 5.7A, 10V, 39mOhm @ 4.8A, 10V Gate Charge (Qg) (Max) @ Vgs: 5.8nC @ 4.5V, 19nC @ 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 8-SO |
auf Bestellung 1400 Stücke: Lieferzeit 10-14 Tag (e) |
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AM4541C | Analog Power Inc. |
![]() Packaging: Bulk Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.1W (Ta) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta), 3.9A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 287pF @ 15V, 384pF @ 15V Rds On (Max) @ Id, Vgs: 42mOhm @ 5.3A, 10V, 90mOhm @ 3.6A, 10V Gate Charge (Qg) (Max) @ Vgs: 3.6nC @ 10V, 5.8nC @ 10V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 8-SO |
auf Bestellung 2000 Stücke: Lieferzeit 10-14 Tag (e) |
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AM4599C | Analog Power Inc. |
![]() Packaging: Bulk Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.1W (Ta) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 7.7A (Ta), 4.3A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 1465pF @ 15V, 1817pF @ 15V Rds On (Max) @ Id, Vgs: 33mOhm @ 5.4A, 10V, 57mOhm @ 5.2A, 10V Gate Charge (Qg) (Max) @ Vgs: 5nC @ 4.5V, 20nC @ 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 8-SO |
auf Bestellung 4000 Stücke: Lieferzeit 10-14 Tag (e) |
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AM45N06-16D | Analog Power Inc. |
![]() Packaging: Bulk Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 46A (Tc) Rds On (Max) @ Id, Vgs: 16mOhm @ 46A, 4.5V Power Dissipation (Max): 50W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: TO-252 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 4.5 V |
auf Bestellung 1 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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AM4825P | Analog Power Inc. |
![]() Packaging: Bulk Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta), 17.5A (Tc) Rds On (Max) @ Id, Vgs: 13mOhm @ 9.2A, 10V Power Dissipation (Max): 3.1W (Ta), 6.3W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 8-SO Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2380 pF @ 15 V |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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AM4832N | Analog Power Inc. |
Description: MOSFET N-CH 30V 26A SO-8 Packaging: Bulk Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 26A (Ta) Rds On (Max) @ Id, Vgs: 3.2mOhm @ 20A, 10V Power Dissipation (Max): 3.1W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 8-SO Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 6380 pF @ 15 V |
auf Bestellung 1 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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AM4835P | Analog Power Inc. |
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auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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AM4840N | Analog Power Inc. |
![]() Packaging: Bulk Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.7A (Ta) Rds On (Max) @ Id, Vgs: 22mOhm @ 7.8A, 10V Power Dissipation (Max): 3.1W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 8-SO Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1306 pF @ 15 V |
auf Bestellung 20000 Stücke: Lieferzeit 10-14 Tag (e) |
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AM4841P-CT | Analog Power Inc. |
![]() Packaging: Bulk Package / Case: SOIC-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 7.7A (Ta) Rds On (Max) @ Id, Vgs: 45mOhm @ 4.9A, 4.5V Power Dissipation (Max): 3.1W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOIC-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1826 pF @ 15 V |
auf Bestellung 2175 Stücke: Lieferzeit 10-14 Tag (e) |
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AM4842N | Analog Power Inc. |
![]() Packaging: Bulk Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13.8A (Ta) Rds On (Max) @ Id, Vgs: 11mOhm @ 11A, 10V Power Dissipation (Max): 3.1W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 8-SO Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 737 pF @ 15 V |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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AM4874N-CT | Analog Power Inc. |
![]() Packaging: Bulk Package / Case: SOIC-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16.8A (Ta) Rds On (Max) @ Id, Vgs: 12mOhm @ 10.8A, 4.5V Power Dissipation (Max): 3.1W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOIC-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1456 pF @ 15 V |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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AM4890N | Analog Power Inc. |
Description: MOSFET N-CH 150V 1.4A SO-8 Packaging: Bulk Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 8-SO |
auf Bestellung 1 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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AM4902N | Analog Power Inc. |
![]() Packaging: Bulk Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.1W (Ta) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 6.4A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 1460pF @ 15V Rds On (Max) @ Id, Vgs: 35mOhm @ 5.2A, 10V Gate Charge (Qg) (Max) @ Vgs: 16nC @ 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 8-SO |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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AM4910N | Analog Power Inc. |
Description: MOSFET 2N-CH 30V 11A SO-8 Packaging: Bulk Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.1W (Ta) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Rds On (Max) @ Id, Vgs: 13.5mOhm @ 10A, 10V Gate Charge (Qg) (Max) @ Vgs: 20nC @ 5V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 8-SO |
auf Bestellung 1 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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AM4920N | Analog Power Inc. |
![]() Packaging: Bulk Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta) Rds On (Max) @ Id, Vgs: 34mOhm @ 5.5A, 10V Power Dissipation (Max): 2.1W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA (Min) Supplier Device Package: SO-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 15 V |
auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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AM4924N | Analog Power Inc. |
![]() Packaging: Bulk |
auf Bestellung 1 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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AM4934N | Analog Power Inc. |
![]() Packaging: Bulk |
auf Bestellung 4000 Stücke: Lieferzeit 10-14 Tag (e) |
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AM4940N | Analog Power Inc. |
![]() Packaging: Bulk Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.3A (Ta) Rds On (Max) @ Id, Vgs: 22mOhm @ 6.6A, 10V Power Dissipation (Max): 2.1W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SO-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1309 pF @ 15 V |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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AM4942N | Analog Power Inc. |
![]() Packaging: Bulk |
auf Bestellung 1 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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AM4998N | Analog Power Inc. |
![]() Packaging: Bulk Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Configuration: 2 N-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.1W (Ta) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6.7A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 641pF @ 15V Rds On (Max) @ Id, Vgs: 32mOhm @ 5.3A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 9nC @ 4.5V Vgs(th) (Max) @ Id: 0.5V @ 250µA (Min) Supplier Device Package: 8-SO |
auf Bestellung 4000 Stücke: Lieferzeit 10-14 Tag (e) |
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AM50N03-12I | Analog Power Inc. |
![]() Packaging: Bulk Package / Case: TO-251-3, IPak, Short Leads Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50.7A (Ta) Rds On (Max) @ Id, Vgs: 12mOhm @ 20A, 10V Power Dissipation (Max): 50W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA (Min) Supplier Device Package: TO-251 (IPAK) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1299 pF @ 15 V |
auf Bestellung 2770 Stücke: Lieferzeit 10-14 Tag (e) |
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AM50N06-15D-CT | Analog Power Inc. |
![]() Packaging: Bulk Package / Case: TO-252 (D-Pak) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 51A (Tc) Rds On (Max) @ Id, Vgs: 18mOhm @ 16A, 4.5V Power Dissipation (Max): 50W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: TO-252 (D-Pak) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2022 pF @ 15 V |
auf Bestellung 1600 Stücke: Lieferzeit 10-14 Tag (e) |
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AM50N10-18D | Analog Power Inc. |
![]() Packaging: Bulk Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 43A (Tc) Rds On (Max) @ Id, Vgs: 18mOhm @ 60A, 10V Power Dissipation (Max): 50W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: TO-252 Drive Voltage (Max Rds On, Min Rds On): 5.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 5.5 V Input Capacitance (Ciss) (Max) @ Vds: 4376 pF @ 15 V |
auf Bestellung 800 Stücke: Lieferzeit 10-14 Tag (e) |
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AM50P03-09D | Analog Power Inc. |
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auf Bestellung 3500 Stücke: Lieferzeit 10-14 Tag (e) |
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AM50P06-15D | Analog Power Inc. |
![]() Packaging: Bulk Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 44A (Tc) Rds On (Max) @ Id, Vgs: 17mOhm @ 22A, 10V Power Dissipation (Max): 50W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: TO-252 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4654 pF @ 15 V |
auf Bestellung 1 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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AM60N10-13D | Analog Power Inc. |
![]() Packaging: Bulk Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 51A (Tc) Rds On (Max) @ Id, Vgs: 13mOhm @ 20A, 10V Power Dissipation (Max): 50W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: TO-252 Drive Voltage (Max Rds On, Min Rds On): 5.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 5.5 V Input Capacitance (Ciss) (Max) @ Vds: 18691 pF @ 15 V |
auf Bestellung 1900 Stücke: Lieferzeit 10-14 Tag (e) |
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AM60N10-70P | Analog Power Inc. |
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auf Bestellung 2000 Stücke: Lieferzeit 10-14 Tag (e) |
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AM6612N | Analog Power Inc. |
![]() Packaging: Bulk Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.7A (Ta) Rds On (Max) @ Id, Vgs: 22mOhm @ 7.5A, 10V Power Dissipation (Max): 3.1W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 8-SO Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 15 V |
auf Bestellung 4000 Stücke: Lieferzeit 10-14 Tag (e) |
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AM6930N | Analog Power Inc. |
![]() Packaging: Bulk Package / Case: TSSOP-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta) Rds On (Max) @ Id, Vgs: 22mOhm @ 5A, 10V Power Dissipation (Max): 1.5W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA (Min) Supplier Device Package: TSSOP-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 439 pF @ 15 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 4.5 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 15.0 |
auf Bestellung 2300 Stücke: Lieferzeit 10-14 Tag (e) |
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AM70N04-06D | Analog Power Inc. |
![]() Packaging: Bulk Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Ta) Rds On (Max) @ Id, Vgs: 6mOhm @ 75A, 10V Power Dissipation (Max): 50W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: TO-252 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 8060 pF @ 15 V |
auf Bestellung 1680 Stücke: Lieferzeit 10-14 Tag (e) |
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AM7102NA-CT | Analog Power Inc. |
![]() Packaging: Bulk Package / Case: DFN3x3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta) Rds On (Max) @ Id, Vgs: 36mOhm @ 6.3A, 4.5V Power Dissipation (Max): 3.5W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: DFN3x3 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 3994 pF @ 15 V |
auf Bestellung 850 Stücke: Lieferzeit 10-14 Tag (e) |
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AM7150N | Analog Power Inc. |
![]() Packaging: Bulk Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta) Rds On (Max) @ Id, Vgs: 255mOhm @ 2.9A, 10V Power Dissipation (Max): 5W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 8-DFN (3x3) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 10.8 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 848 pF @ 15 V |
auf Bestellung 1290 Stücke: Lieferzeit 10-14 Tag (e) |
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AM7302N | Analog Power Inc. |
![]() Packaging: Bulk Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24.2A (Ta) Rds On (Max) @ Id, Vgs: 4mOhm @ 20A, 10V Power Dissipation (Max): 3.5W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 8-DFN (3x3) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 5022 pF @ 15 V |
auf Bestellung 4250 Stücke: Lieferzeit 10-14 Tag (e) |
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AM7314N | Analog Power Inc. |
![]() Packaging: Bulk Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Ta) Rds On (Max) @ Id, Vgs: 58mOhm @ 4A, 4.5V Power Dissipation (Max): 3.5W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 8-DFN (3x3) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2741 pF @ 15 V |
auf Bestellung 3200 Stücke: Lieferzeit 10-14 Tag (e) |
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AM7314N-CT | Analog Power Inc. |
![]() Packaging: Bulk Package / Case: DFN3x3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Ta) Rds On (Max) @ Id, Vgs: 58mOhm @ 4A, 4.5V Power Dissipation (Max): 3.5W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: DFN3x3 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2741 pF @ 15 V |
auf Bestellung 3200 Stücke: Lieferzeit 10-14 Tag (e) |
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AM7318N | Analog Power Inc. |
![]() Packaging: Bulk Package / Case: 8-PowerDFN Mounting Type: Surface Mount Technology: MOSFET (Metal Oxide) FET Type: N-Channel Rds On (Max) @ Id, Vgs: 5mOhm @ 50A, 10V Supplier Device Package: 8-DFN (3x3) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V |
auf Bestellung 450 Stücke: Lieferzeit 10-14 Tag (e) |
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AM7320N | Analog Power Inc. |
![]() Packaging: Bulk Package / Case: DFN3x3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 70A (Tc) Rds On (Max) @ Id, Vgs: 3.8mOhm @ 17.8A, 4.5V Power Dissipation (Max): 3.5W (Ta), 63W (Tc) Vgs(th) (Max) @ Id: 400mV @ 250µA (Min) Supplier Device Package: DFN3x3 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 8742 pF @ 15 V |
auf Bestellung 1 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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AM7326N | Analog Power Inc. |
![]() Packaging: Bulk Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Rds On (Max) @ Id, Vgs: 9.2mOhm @ 8A, 4.5V Power Dissipation (Max): 63W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 8-DFN (3x3) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1505 pF @ 30 V |
auf Bestellung 4500 Stücke: Lieferzeit 10-14 Tag (e) |
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AM7326N-CT | Analog Power Inc. |
![]() Packaging: Bulk Package / Case: DFN3x3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Rds On (Max) @ Id, Vgs: 9.2mOhm @ 8A, 4.5V Power Dissipation (Max): 63W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: DFN3x3 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1505 pF @ 30 V |
auf Bestellung 4440 Stücke: Lieferzeit 10-14 Tag (e) |
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AM7328N | Analog Power Inc. |
![]() Packaging: Bulk Mounting Type: Surface Mount Technology: MOSFET (Metal Oxide) FET Type: N-Channel |
auf Bestellung 3500 Stücke: Lieferzeit 10-14 Tag (e) |
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AM7330N | Analog Power Inc. |
![]() Packaging: Bulk Package / Case: DFN3x3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 19A (Tc) Rds On (Max) @ Id, Vgs: 20mOhm @ 8.2A, 10V Power Dissipation (Max): 3.5W (Ta), 11W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA (Min) Supplier Device Package: DFN3x3 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 4.1 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 15 V |
auf Bestellung 2000 Stücke: Lieferzeit 10-14 Tag (e) |
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AM7332N | Analog Power Inc. |
![]() Packaging: Bulk Package / Case: DFN3x3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 33A (Tc) Rds On (Max) @ Id, Vgs: 13mOhm @ 8A, 10V Power Dissipation (Max): 3.5W (Ta), 22W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA (Min) Supplier Device Package: DFN3x3 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1379 pF @ 15 V |
auf Bestellung 200 Stücke: Lieferzeit 10-14 Tag (e) |
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AM7334N | Analog Power Inc. |
![]() Packaging: Bulk Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Ta) Rds On (Max) @ Id, Vgs: 8mOhm @ 17A, 10V Power Dissipation (Max): 3.5W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 8-DFN (3x3) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1456 pF @ 15 V |
auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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AM7336N | Analog Power Inc. |
![]() Packaging: Bulk Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16.2A (Ta) Rds On (Max) @ Id, Vgs: 9mOhm @ 13.6A, 4.5V Power Dissipation (Max): 3.5W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 8-DFN (3x3) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2238 pF @ 15 V |
auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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AM7338N | Analog Power Inc. |
![]() Packaging: Bulk Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19A (Ta) Rds On (Max) @ Id, Vgs: 6.9mOhm @ 17.6A, 10V Power Dissipation (Max): 3.5W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 8-DFN (3x3) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1835 pF @ 15 V |
auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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AM7340N | Analog Power Inc. |
![]() Packaging: Bulk Package / Case: DFN3x3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Ta) Rds On (Max) @ Id, Vgs: 5.5mOhm @ 16.5A, 10V Power Dissipation (Max): 3.5W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA (Min) Supplier Device Package: DFN3x3 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2971 pF @ 15 V |
auf Bestellung 1 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
AM4432N |
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Hersteller: Analog Power Inc.
Description: MOSFET N-CH 30V 13.8A SO-8
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.8A (Ta)
Rds On (Max) @ Id, Vgs: 11mOhm @ 16.8A, 4.5V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2047 pF @ 15 V
Description: MOSFET N-CH 30V 13.8A SO-8
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.8A (Ta)
Rds On (Max) @ Id, Vgs: 11mOhm @ 16.8A, 4.5V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2047 pF @ 15 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
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24+ | 0.76 EUR |
35+ | 0.50 EUR |
100+ | 0.45 EUR |
500+ | 0.35 EUR |
1000+ | 0.29 EUR |
2500+ | 0.25 EUR |
AM4434N-CT |
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Hersteller: Analog Power Inc.
Description: MOSFET N-CH 30V 18.6A SOIC-8
Packaging: Bulk
Package / Case: SOIC-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18.6A (Ta)
Rds On (Max) @ Id, Vgs: 8mOhm @ 16.1A, 2.5V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOIC-8
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): 12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2586 pF @ 15 V
Description: MOSFET N-CH 30V 18.6A SOIC-8
Packaging: Bulk
Package / Case: SOIC-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18.6A (Ta)
Rds On (Max) @ Id, Vgs: 8mOhm @ 16.1A, 2.5V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOIC-8
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): 12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2586 pF @ 15 V
auf Bestellung 550 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
18+ | 1.00 EUR |
27+ | 0.67 EUR |
100+ | 0.60 EUR |
500+ | 0.47 EUR |
AM4436N |
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Hersteller: Analog Power Inc.
Description: MOSFET N-CH 30V 22A SO-8
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta)
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 22A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 7686 pF @ 15 V
Description: MOSFET N-CH 30V 22A SO-8
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta)
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 22A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 7686 pF @ 15 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
15+ | 1.21 EUR |
22+ | 0.80 EUR |
100+ | 0.72 EUR |
500+ | 0.56 EUR |
1000+ | 0.46 EUR |
AM4466N |
Hersteller: Analog Power Inc.
Description: MOSFET N-CH 60V 15A SO-8
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Rds On (Max) @ Id, Vgs: 8.9mOhm @ 10A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4107 pF @ 15 V
Description: MOSFET N-CH 60V 15A SO-8
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Rds On (Max) @ Id, Vgs: 8.9mOhm @ 10A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4107 pF @ 15 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
9+ | 2.01 EUR |
14+ | 1.34 EUR |
100+ | 1.21 EUR |
500+ | 0.94 EUR |
1000+ | 0.77 EUR |
2500+ | 0.67 EUR |
AM4468N |
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Hersteller: Analog Power Inc.
Description: MOSFET N-CH 60V 14A SO-8
Packaging: Bulk
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Rds On (Max) @ Id, Vgs: 11mOhm @ 10A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3193 pF @ 15 V
Description: MOSFET N-CH 60V 14A SO-8
Packaging: Bulk
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Rds On (Max) @ Id, Vgs: 11mOhm @ 10A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3193 pF @ 15 V
auf Bestellung 1200 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
19+ | 0.95 EUR |
28+ | 0.64 EUR |
100+ | 0.57 EUR |
500+ | 0.45 EUR |
1000+ | 0.37 EUR |
AM4480N |
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Hersteller: Analog Power Inc.
Description: MOSFET N-CH 80V 7.1A SOIC-8
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.1A (Ta)
Rds On (Max) @ Id, Vgs: 41mOhm @ 5.4A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 19.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1522 pF @ 15 V
Description: MOSFET N-CH 80V 7.1A SOIC-8
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.1A (Ta)
Rds On (Max) @ Id, Vgs: 41mOhm @ 5.4A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 19.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1522 pF @ 15 V
auf Bestellung 700 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
18+ | 1.00 EUR |
27+ | 0.67 EUR |
100+ | 0.60 EUR |
500+ | 0.47 EUR |
AM4484N |
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Hersteller: Analog Power Inc.
Description: MOSFET N-CH 80V 13A SO-8
Packaging: Bulk
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
Rds On (Max) @ Id, Vgs: 12mOhm @ 8A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 7546 pF @ 15 V
Description: MOSFET N-CH 80V 13A SO-8
Packaging: Bulk
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
Rds On (Max) @ Id, Vgs: 12mOhm @ 8A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 7546 pF @ 15 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
13+ | 1.41 EUR |
19+ | 0.94 EUR |
100+ | 0.84 EUR |
500+ | 0.66 EUR |
1000+ | 0.54 EUR |
AM4490N-CT |
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Hersteller: Analog Power Inc.
Description: MOSFET N-CH 100V 5.2A SOIC-8
Packaging: Bulk
Package / Case: SOIC-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta)
Rds On (Max) @ Id, Vgs: 92mOhm @ 3.3A, 4.5V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: SOIC-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 17.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 990 pF @ 15 V
Description: MOSFET N-CH 100V 5.2A SOIC-8
Packaging: Bulk
Package / Case: SOIC-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta)
Rds On (Max) @ Id, Vgs: 92mOhm @ 3.3A, 4.5V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: SOIC-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 17.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 990 pF @ 15 V
auf Bestellung 4700 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
18+ | 1.02 EUR |
26+ | 0.68 EUR |
100+ | 0.61 EUR |
500+ | 0.48 EUR |
1000+ | 0.39 EUR |
AM4492N |
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Hersteller: Analog Power Inc.
Description: MOSFET N-CH 100V 9A SOIC-8
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 26mOhm @ 9A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 15.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1216 pF @ 15 V
Description: MOSFET N-CH 100V 9A SOIC-8
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 26mOhm @ 9A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 15.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1216 pF @ 15 V
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
16+ | 1.11 EUR |
24+ | 0.74 EUR |
100+ | 0.66 EUR |
500+ | 0.52 EUR |
AM4496N |
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Hersteller: Analog Power Inc.
Description: MOSFET N-CH 100V 7.6A SO-8
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.6A (Ta)
Rds On (Max) @ Id, Vgs: 36mOhm @ 4A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 5.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 414 pF @ 50 V
Description: MOSFET N-CH 100V 7.6A SO-8
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.6A (Ta)
Rds On (Max) @ Id, Vgs: 36mOhm @ 4A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 5.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 414 pF @ 50 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
33+ | 0.55 EUR |
48+ | 0.37 EUR |
100+ | 0.33 EUR |
500+ | 0.26 EUR |
1000+ | 0.21 EUR |
2500+ | 0.18 EUR |
AM4499P |
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Hersteller: Analog Power Inc.
Description: MOSFET P-CH 60V 6.8A SOIC-8
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 5.4A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1725 pF @ 15 V
Description: MOSFET P-CH 60V 6.8A SOIC-8
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 5.4A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1725 pF @ 15 V
auf Bestellung 2300 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
28+ | 0.63 EUR |
43+ | 0.42 EUR |
100+ | 0.38 EUR |
500+ | 0.29 EUR |
1000+ | 0.24 EUR |
AM4502C |
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Hersteller: Analog Power Inc.
Description: MOSFET N/P-CH 30V 9.4A 8SO
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.1W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta), 7.9A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 1456pF @ 15V, 1934pF @ 15V
Rds On (Max) @ Id, Vgs: 23mOhm @ 8.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V, 28nC @ 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Description: MOSFET N/P-CH 30V 9.4A 8SO
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.1W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta), 7.9A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 1456pF @ 15V, 1934pF @ 15V
Rds On (Max) @ Id, Vgs: 23mOhm @ 8.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V, 28nC @ 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
22+ | 0.83 EUR |
32+ | 0.55 EUR |
100+ | 0.50 EUR |
500+ | 0.39 EUR |
1000+ | 0.32 EUR |
AM4502CE |
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Hersteller: Analog Power Inc.
Description: MOSFET N/P-CH 30V SO-8
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.1W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta), 7.9A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 1309pF @ 15V, 1663pF @ 15V
Rds On (Max) @ Id, Vgs: 16mOhm @ 4.7A, 10V, 23mOhm @ 3.9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V, 23nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Description: MOSFET N/P-CH 30V SO-8
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.1W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta), 7.9A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 1309pF @ 15V, 1663pF @ 15V
Rds On (Max) @ Id, Vgs: 16mOhm @ 4.7A, 10V, 23mOhm @ 3.9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V, 23nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)Im Einkaufswagen Stück im Wert von UAH
AM4512C |
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Hersteller: Analog Power Inc.
Description: MOSFET N/P-CH 30V 6.9A 8SO
Packaging: Bulk
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.1W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.7A (Ta), 5.2A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 519pF @ 15V, 604pF @ 15V
Rds On (Max) @ Id, Vgs: 31mOhm @ 4.7A, 10V, 52mOhm @ 4.2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V, 7nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Description: MOSFET N/P-CH 30V 6.9A 8SO
Packaging: Bulk
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.1W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.7A (Ta), 5.2A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 519pF @ 15V, 604pF @ 15V
Rds On (Max) @ Id, Vgs: 31mOhm @ 4.7A, 10V, 52mOhm @ 4.2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V, 7nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
22+ | 0.83 EUR |
32+ | 0.56 EUR |
100+ | 0.50 EUR |
500+ | 0.39 EUR |
1000+ | 0.32 EUR |
AM4536C |
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Hersteller: Analog Power Inc.
Description: MOSFET N/P-CH 30V 7.1A 8SO
Packaging: Bulk
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.1W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7.1A (Ta), 6A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 519pF @ 15V, 597pF @ 15V
Rds On (Max) @ Id, Vgs: 28mOhm @ 5.7A, 10V, 39mOhm @ 4.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 5.8nC @ 4.5V, 19nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Description: MOSFET N/P-CH 30V 7.1A 8SO
Packaging: Bulk
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.1W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7.1A (Ta), 6A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 519pF @ 15V, 597pF @ 15V
Rds On (Max) @ Id, Vgs: 28mOhm @ 5.7A, 10V, 39mOhm @ 4.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 5.8nC @ 4.5V, 19nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
auf Bestellung 1400 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
11+ | 1.71 EUR |
16+ | 1.14 EUR |
100+ | 1.03 EUR |
500+ | 0.80 EUR |
1000+ | 0.65 EUR |
AM4541C |
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Hersteller: Analog Power Inc.
Description: MOSFET N/P-CH 40V 5.8A 8SO
Packaging: Bulk
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.1W (Ta)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta), 3.9A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 287pF @ 15V, 384pF @ 15V
Rds On (Max) @ Id, Vgs: 42mOhm @ 5.3A, 10V, 90mOhm @ 3.6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 3.6nC @ 10V, 5.8nC @ 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Description: MOSFET N/P-CH 40V 5.8A 8SO
Packaging: Bulk
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.1W (Ta)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta), 3.9A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 287pF @ 15V, 384pF @ 15V
Rds On (Max) @ Id, Vgs: 42mOhm @ 5.3A, 10V, 90mOhm @ 3.6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 3.6nC @ 10V, 5.8nC @ 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
28+ | 0.65 EUR |
41+ | 0.43 EUR |
100+ | 0.39 EUR |
500+ | 0.30 EUR |
1000+ | 0.25 EUR |
AM4599C |
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Hersteller: Analog Power Inc.
Description: MOSFET N/P-CH 60V 7.7A 8SO
Packaging: Bulk
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.1W (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 7.7A (Ta), 4.3A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 1465pF @ 15V, 1817pF @ 15V
Rds On (Max) @ Id, Vgs: 33mOhm @ 5.4A, 10V, 57mOhm @ 5.2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 5nC @ 4.5V, 20nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Description: MOSFET N/P-CH 60V 7.7A 8SO
Packaging: Bulk
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.1W (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 7.7A (Ta), 4.3A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 1465pF @ 15V, 1817pF @ 15V
Rds On (Max) @ Id, Vgs: 33mOhm @ 5.4A, 10V, 57mOhm @ 5.2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 5nC @ 4.5V, 20nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
9+ | 2.01 EUR |
14+ | 1.34 EUR |
100+ | 1.21 EUR |
500+ | 0.94 EUR |
1000+ | 0.77 EUR |
AM45N06-16D |
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Hersteller: Analog Power Inc.
Description: MOSFET N-CH 60V 45.7A TO-252
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 46A, 4.5V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 4.5 V
Description: MOSFET N-CH 60V 45.7A TO-252
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 46A, 4.5V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 4.5 V
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)Im Einkaufswagen Stück im Wert von UAH
AM4825P |
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Hersteller: Analog Power Inc.
Description: MOSFET P-CH 30V 17.5A SOIC-8
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta), 17.5A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 9.2A, 10V
Power Dissipation (Max): 3.1W (Ta), 6.3W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2380 pF @ 15 V
Description: MOSFET P-CH 30V 17.5A SOIC-8
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta), 17.5A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 9.2A, 10V
Power Dissipation (Max): 3.1W (Ta), 6.3W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2380 pF @ 15 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
34+ | 0.53 EUR |
50+ | 0.36 EUR |
100+ | 0.32 EUR |
500+ | 0.25 EUR |
1000+ | 0.21 EUR |
AM4832N |
Hersteller: Analog Power Inc.
Description: MOSFET N-CH 30V 26A SO-8
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Ta)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 20A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 6380 pF @ 15 V
Description: MOSFET N-CH 30V 26A SO-8
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Ta)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 20A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 6380 pF @ 15 V
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)Im Einkaufswagen Stück im Wert von UAH
AM4835P |
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auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
30+ | 0.60 EUR |
44+ | 0.40 EUR |
100+ | 0.36 EUR |
500+ | 0.28 EUR |
1000+ | 0.23 EUR |
2500+ | 0.20 EUR |
AM4840N |
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Hersteller: Analog Power Inc.
Description: MOSFET N-CH 40V 9.7A SOIC-8
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.7A (Ta)
Rds On (Max) @ Id, Vgs: 22mOhm @ 7.8A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1306 pF @ 15 V
Description: MOSFET N-CH 40V 9.7A SOIC-8
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.7A (Ta)
Rds On (Max) @ Id, Vgs: 22mOhm @ 7.8A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1306 pF @ 15 V
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
19+ | 0.95 EUR |
28+ | 0.64 EUR |
100+ | 0.57 EUR |
500+ | 0.45 EUR |
1000+ | 0.37 EUR |
2500+ | 0.32 EUR |
AM4841P-CT |
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Hersteller: Analog Power Inc.
Description: MOSFET P-CH -40V 7.7A SOIC-8
Packaging: Bulk
Package / Case: SOIC-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7.7A (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 4.9A, 4.5V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOIC-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1826 pF @ 15 V
Description: MOSFET P-CH -40V 7.7A SOIC-8
Packaging: Bulk
Package / Case: SOIC-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7.7A (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 4.9A, 4.5V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOIC-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1826 pF @ 15 V
auf Bestellung 2175 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
26+ | 0.69 EUR |
39+ | 0.45 EUR |
100+ | 0.41 EUR |
500+ | 0.32 EUR |
1000+ | 0.26 EUR |
AM4842N |
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Hersteller: Analog Power Inc.
Description: MOSFET N-CH 40V 13.8A SOIC-8
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.8A (Ta)
Rds On (Max) @ Id, Vgs: 11mOhm @ 11A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 737 pF @ 15 V
Description: MOSFET N-CH 40V 13.8A SOIC-8
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.8A (Ta)
Rds On (Max) @ Id, Vgs: 11mOhm @ 11A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 737 pF @ 15 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
18+ | 1.00 EUR |
27+ | 0.67 EUR |
100+ | 0.60 EUR |
500+ | 0.47 EUR |
1000+ | 0.39 EUR |
2500+ | 0.34 EUR |
AM4874N-CT |
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Hersteller: Analog Power Inc.
Description: MOSFET N-CH 30V 16.8A SOIC-8
Packaging: Bulk
Package / Case: SOIC-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16.8A (Ta)
Rds On (Max) @ Id, Vgs: 12mOhm @ 10.8A, 4.5V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOIC-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1456 pF @ 15 V
Description: MOSFET N-CH 30V 16.8A SOIC-8
Packaging: Bulk
Package / Case: SOIC-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16.8A (Ta)
Rds On (Max) @ Id, Vgs: 12mOhm @ 10.8A, 4.5V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOIC-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1456 pF @ 15 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
22+ | 0.83 EUR |
32+ | 0.55 EUR |
100+ | 0.50 EUR |
500+ | 0.39 EUR |
1000+ | 0.32 EUR |
AM4890N |
Hersteller: Analog Power Inc.
Description: MOSFET N-CH 150V 1.4A SO-8
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Description: MOSFET N-CH 150V 1.4A SO-8
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)Im Einkaufswagen Stück im Wert von UAH
AM4902N |
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Hersteller: Analog Power Inc.
Description: MOSFET 2N-CH 60V 6.4A 8SO
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.1W (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 6.4A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 1460pF @ 15V
Rds On (Max) @ Id, Vgs: 35mOhm @ 5.2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Description: MOSFET 2N-CH 60V 6.4A 8SO
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.1W (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 6.4A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 1460pF @ 15V
Rds On (Max) @ Id, Vgs: 35mOhm @ 5.2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
20+ | 0.90 EUR |
30+ | 0.60 EUR |
100+ | 0.54 EUR |
500+ | 0.42 EUR |
1000+ | 0.35 EUR |
2500+ | 0.30 EUR |
AM4910N |
Hersteller: Analog Power Inc.
Description: MOSFET 2N-CH 30V 11A SO-8
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.1W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Description: MOSFET 2N-CH 30V 11A SO-8
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.1W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)Im Einkaufswagen Stück im Wert von UAH
AM4920N |
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Hersteller: Analog Power Inc.
Description: MOSFET N-CH 30V 6.5A SO-8
Packaging: Bulk
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta)
Rds On (Max) @ Id, Vgs: 34mOhm @ 5.5A, 10V
Power Dissipation (Max): 2.1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Supplier Device Package: SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 15 V
Description: MOSFET N-CH 30V 6.5A SO-8
Packaging: Bulk
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta)
Rds On (Max) @ Id, Vgs: 34mOhm @ 5.5A, 10V
Power Dissipation (Max): 2.1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Supplier Device Package: SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 15 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
24+ | 0.74 EUR |
37+ | 0.49 EUR |
100+ | 0.44 EUR |
500+ | 0.34 EUR |
1000+ | 0.28 EUR |
AM4934N |
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auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
16+ | 1.11 EUR |
24+ | 0.74 EUR |
100+ | 0.66 EUR |
500+ | 0.52 EUR |
1000+ | 0.42 EUR |
2500+ | 0.37 EUR |
AM4940N |
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Hersteller: Analog Power Inc.
Description: MOSFET N-CH 40V 8.3A SO-8
Packaging: Bulk
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.3A (Ta)
Rds On (Max) @ Id, Vgs: 22mOhm @ 6.6A, 10V
Power Dissipation (Max): 2.1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1309 pF @ 15 V
Description: MOSFET N-CH 40V 8.3A SO-8
Packaging: Bulk
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.3A (Ta)
Rds On (Max) @ Id, Vgs: 22mOhm @ 6.6A, 10V
Power Dissipation (Max): 2.1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1309 pF @ 15 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
11+ | 1.60 EUR |
17+ | 1.07 EUR |
100+ | 0.96 EUR |
500+ | 0.75 EUR |
1000+ | 0.62 EUR |
2500+ | 0.54 EUR |
AM4998N |
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Hersteller: Analog Power Inc.
Description: MOSFET 2N-CH 30V 6.5A 8SO
Packaging: Bulk
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.1W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.7A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 641pF @ 15V
Rds On (Max) @ Id, Vgs: 32mOhm @ 5.3A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 9nC @ 4.5V
Vgs(th) (Max) @ Id: 0.5V @ 250µA (Min)
Supplier Device Package: 8-SO
Description: MOSFET 2N-CH 30V 6.5A 8SO
Packaging: Bulk
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.1W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.7A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 641pF @ 15V
Rds On (Max) @ Id, Vgs: 32mOhm @ 5.3A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 9nC @ 4.5V
Vgs(th) (Max) @ Id: 0.5V @ 250µA (Min)
Supplier Device Package: 8-SO
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
19+ | 0.95 EUR |
28+ | 0.64 EUR |
100+ | 0.57 EUR |
500+ | 0.45 EUR |
1000+ | 0.37 EUR |
2500+ | 0.32 EUR |
AM50N03-12I |
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Hersteller: Analog Power Inc.
Description: MOSFET N-CH 30V 50.7A TO-251
Packaging: Bulk
Package / Case: TO-251-3, IPak, Short Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50.7A (Ta)
Rds On (Max) @ Id, Vgs: 12mOhm @ 20A, 10V
Power Dissipation (Max): 50W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Supplier Device Package: TO-251 (IPAK)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1299 pF @ 15 V
Description: MOSFET N-CH 30V 50.7A TO-251
Packaging: Bulk
Package / Case: TO-251-3, IPak, Short Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50.7A (Ta)
Rds On (Max) @ Id, Vgs: 12mOhm @ 20A, 10V
Power Dissipation (Max): 50W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Supplier Device Package: TO-251 (IPAK)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1299 pF @ 15 V
auf Bestellung 2770 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
19+ | 0.93 EUR |
29+ | 0.62 EUR |
100+ | 0.56 EUR |
500+ | 0.43 EUR |
1000+ | 0.35 EUR |
AM50N06-15D-CT |
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Hersteller: Analog Power Inc.
Description: MOSFET N-CH 60V 51A TO-252 (D-Pa
Packaging: Bulk
Package / Case: TO-252 (D-Pak)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 16A, 4.5V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: TO-252 (D-Pak)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2022 pF @ 15 V
Description: MOSFET N-CH 60V 51A TO-252 (D-Pa
Packaging: Bulk
Package / Case: TO-252 (D-Pak)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 16A, 4.5V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: TO-252 (D-Pak)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2022 pF @ 15 V
auf Bestellung 1600 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
22+ | 0.83 EUR |
32+ | 0.56 EUR |
100+ | 0.50 EUR |
500+ | 0.39 EUR |
1000+ | 0.32 EUR |
AM50N10-18D |
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Hersteller: Analog Power Inc.
Description: MOSFET N-CH 100V 43A TO-252
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 60A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 5.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 5.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4376 pF @ 15 V
Description: MOSFET N-CH 100V 43A TO-252
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 60A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 5.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 5.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4376 pF @ 15 V
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
10+ | 1.95 EUR |
14+ | 1.30 EUR |
100+ | 1.17 EUR |
500+ | 0.91 EUR |
AM50P03-09D |
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auf Bestellung 3500 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
12+ | 1.57 EUR |
17+ | 1.04 EUR |
100+ | 0.94 EUR |
500+ | 0.73 EUR |
1000+ | 0.60 EUR |
2500+ | 0.52 EUR |
AM50P06-15D |
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Hersteller: Analog Power Inc.
Description: MOSFET P-CH -60V 44A TO-252
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 22A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4654 pF @ 15 V
Description: MOSFET P-CH -60V 44A TO-252
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 22A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4654 pF @ 15 V
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)Im Einkaufswagen Stück im Wert von UAH
AM60N10-13D |
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Hersteller: Analog Power Inc.
Description: MOSFET P-CH 100V 51A TO-252
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 20A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 5.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 5.5 V
Input Capacitance (Ciss) (Max) @ Vds: 18691 pF @ 15 V
Description: MOSFET P-CH 100V 51A TO-252
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 20A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 5.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 5.5 V
Input Capacitance (Ciss) (Max) @ Vds: 18691 pF @ 15 V
auf Bestellung 1900 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
7+ | 2.60 EUR |
11+ | 1.73 EUR |
100+ | 1.56 EUR |
500+ | 1.21 EUR |
1000+ | 1.00 EUR |
AM60N10-70P |
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auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
15+ | 1.18 EUR |
50+ | 0.94 EUR |
100+ | 0.75 EUR |
500+ | 0.65 EUR |
1000+ | 0.52 EUR |
AM6612N |
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Hersteller: Analog Power Inc.
Description: MOSFET N-CH 30V 9.7A SOIC-8
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.7A (Ta)
Rds On (Max) @ Id, Vgs: 22mOhm @ 7.5A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 15 V
Description: MOSFET N-CH 30V 9.7A SOIC-8
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.7A (Ta)
Rds On (Max) @ Id, Vgs: 22mOhm @ 7.5A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 15 V
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
34+ | 0.53 EUR |
50+ | 0.36 EUR |
100+ | 0.32 EUR |
500+ | 0.25 EUR |
1000+ | 0.21 EUR |
2500+ | 0.18 EUR |
AM6930N |
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Hersteller: Analog Power Inc.
Description: MOSFET N-CH 30V 6.8A SO-8
Packaging: Bulk
Package / Case: TSSOP-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta)
Rds On (Max) @ Id, Vgs: 22mOhm @ 5A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Supplier Device Package: TSSOP-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 439 pF @ 15 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 4.5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 15.0
Description: MOSFET N-CH 30V 6.8A SO-8
Packaging: Bulk
Package / Case: TSSOP-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta)
Rds On (Max) @ Id, Vgs: 22mOhm @ 5A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Supplier Device Package: TSSOP-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 439 pF @ 15 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 4.5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 15.0
auf Bestellung 2300 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
13+ | 1.46 EUR |
20+ | 0.90 EUR |
100+ | 0.59 EUR |
500+ | 0.45 EUR |
1000+ | 0.41 EUR |
AM70N04-06D |
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Hersteller: Analog Power Inc.
Description: MOSFET N-CH 40V 75A TO-252
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Ta)
Rds On (Max) @ Id, Vgs: 6mOhm @ 75A, 10V
Power Dissipation (Max): 50W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 8060 pF @ 15 V
Description: MOSFET N-CH 40V 75A TO-252
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Ta)
Rds On (Max) @ Id, Vgs: 6mOhm @ 75A, 10V
Power Dissipation (Max): 50W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 8060 pF @ 15 V
auf Bestellung 1680 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
13+ | 1.46 EUR |
19+ | 0.97 EUR |
100+ | 0.87 EUR |
500+ | 0.68 EUR |
1000+ | 0.56 EUR |
AM7102NA-CT |
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Hersteller: Analog Power Inc.
Description: MOSFET N-CH 100V 9.5A DFN3x3
Packaging: Bulk
Package / Case: DFN3x3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta)
Rds On (Max) @ Id, Vgs: 36mOhm @ 6.3A, 4.5V
Power Dissipation (Max): 3.5W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: DFN3x3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3994 pF @ 15 V
Description: MOSFET N-CH 100V 9.5A DFN3x3
Packaging: Bulk
Package / Case: DFN3x3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta)
Rds On (Max) @ Id, Vgs: 36mOhm @ 6.3A, 4.5V
Power Dissipation (Max): 3.5W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: DFN3x3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3994 pF @ 15 V
auf Bestellung 850 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
15+ | 1.21 EUR |
22+ | 0.81 EUR |
100+ | 0.73 EUR |
500+ | 0.57 EUR |
AM7150N |
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Hersteller: Analog Power Inc.
Description: MOSFET N-CH 150V 3.6A DFN3X3
Packaging: Bulk
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
Rds On (Max) @ Id, Vgs: 255mOhm @ 2.9A, 10V
Power Dissipation (Max): 5W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-DFN (3x3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 10.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 848 pF @ 15 V
Description: MOSFET N-CH 150V 3.6A DFN3X3
Packaging: Bulk
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
Rds On (Max) @ Id, Vgs: 255mOhm @ 2.9A, 10V
Power Dissipation (Max): 5W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-DFN (3x3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 10.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 848 pF @ 15 V
auf Bestellung 1290 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
16+ | 1.16 EUR |
23+ | 0.78 EUR |
100+ | 0.70 EUR |
500+ | 0.55 EUR |
1000+ | 0.45 EUR |
AM7302N |
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Hersteller: Analog Power Inc.
Description: MOSFET N-CH 30V 40A DFN3X3
Packaging: Bulk
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24.2A (Ta)
Rds On (Max) @ Id, Vgs: 4mOhm @ 20A, 10V
Power Dissipation (Max): 3.5W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-DFN (3x3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 5022 pF @ 15 V
Description: MOSFET N-CH 30V 40A DFN3X3
Packaging: Bulk
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24.2A (Ta)
Rds On (Max) @ Id, Vgs: 4mOhm @ 20A, 10V
Power Dissipation (Max): 3.5W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-DFN (3x3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 5022 pF @ 15 V
auf Bestellung 4250 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
26+ | 0.69 EUR |
39+ | 0.45 EUR |
100+ | 0.41 EUR |
500+ | 0.32 EUR |
1000+ | 0.26 EUR |
3000+ | 0.23 EUR |
AM7314N |
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Hersteller: Analog Power Inc.
Description: MOSFET N-CH 100V 7A DFN3x3
Packaging: Bulk
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 58mOhm @ 4A, 4.5V
Power Dissipation (Max): 3.5W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-DFN (3x3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2741 pF @ 15 V
Description: MOSFET N-CH 100V 7A DFN3x3
Packaging: Bulk
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 58mOhm @ 4A, 4.5V
Power Dissipation (Max): 3.5W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-DFN (3x3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2741 pF @ 15 V
auf Bestellung 3200 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
3000+ | 0.31 EUR |
AM7314N-CT |
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Hersteller: Analog Power Inc.
Description: MOSFET N-CH 100V 7A DFN3x3
Packaging: Bulk
Package / Case: DFN3x3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 58mOhm @ 4A, 4.5V
Power Dissipation (Max): 3.5W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: DFN3x3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2741 pF @ 15 V
Description: MOSFET N-CH 100V 7A DFN3x3
Packaging: Bulk
Package / Case: DFN3x3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 58mOhm @ 4A, 4.5V
Power Dissipation (Max): 3.5W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: DFN3x3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2741 pF @ 15 V
auf Bestellung 3200 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
19+ | 0.93 EUR |
29+ | 0.62 EUR |
100+ | 0.56 EUR |
500+ | 0.43 EUR |
1000+ | 0.35 EUR |
AM7318N |
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Hersteller: Analog Power Inc.
Description: MOSFET N-CH 30V 50A DFN3X3
Packaging: Bulk
Package / Case: 8-PowerDFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Rds On (Max) @ Id, Vgs: 5mOhm @ 50A, 10V
Supplier Device Package: 8-DFN (3x3)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Description: MOSFET N-CH 30V 50A DFN3X3
Packaging: Bulk
Package / Case: 8-PowerDFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Rds On (Max) @ Id, Vgs: 5mOhm @ 50A, 10V
Supplier Device Package: 8-DFN (3x3)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
auf Bestellung 450 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
19+ | 0.93 EUR |
29+ | 0.62 EUR |
100+ | 0.56 EUR |
AM7320N |
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Hersteller: Analog Power Inc.
Description: MOSFET N-CH 20V 70A DFN3X3
Packaging: Bulk
Package / Case: DFN3x3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 70A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 17.8A, 4.5V
Power Dissipation (Max): 3.5W (Ta), 63W (Tc)
Vgs(th) (Max) @ Id: 400mV @ 250µA (Min)
Supplier Device Package: DFN3x3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 8742 pF @ 15 V
Description: MOSFET N-CH 20V 70A DFN3X3
Packaging: Bulk
Package / Case: DFN3x3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 70A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 17.8A, 4.5V
Power Dissipation (Max): 3.5W (Ta), 63W (Tc)
Vgs(th) (Max) @ Id: 400mV @ 250µA (Min)
Supplier Device Package: DFN3x3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 8742 pF @ 15 V
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)Im Einkaufswagen Stück im Wert von UAH
AM7326N |
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Hersteller: Analog Power Inc.
Description: MOSFET N-CH 60V 70A DFN3x3
Packaging: Bulk
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 9.2mOhm @ 8A, 4.5V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-DFN (3x3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1505 pF @ 30 V
Description: MOSFET N-CH 60V 70A DFN3x3
Packaging: Bulk
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 9.2mOhm @ 8A, 4.5V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-DFN (3x3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1505 pF @ 30 V
auf Bestellung 4500 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
3000+ | 0.29 EUR |
AM7326N-CT |
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Hersteller: Analog Power Inc.
Description: MOSFET N-CH 60V 70A DFN3x3
Packaging: Bulk
Package / Case: DFN3x3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 9.2mOhm @ 8A, 4.5V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: DFN3x3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1505 pF @ 30 V
Description: MOSFET N-CH 60V 70A DFN3x3
Packaging: Bulk
Package / Case: DFN3x3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 9.2mOhm @ 8A, 4.5V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: DFN3x3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1505 pF @ 30 V
auf Bestellung 4440 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
20+ | 0.88 EUR |
31+ | 0.58 EUR |
100+ | 0.53 EUR |
500+ | 0.41 EUR |
1000+ | 0.34 EUR |
AM7328N |
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Hersteller: Analog Power Inc.
Description: MOSFET N-CH 80V 50A DFN3X3
Packaging: Bulk
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Description: MOSFET N-CH 80V 50A DFN3X3
Packaging: Bulk
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
auf Bestellung 3500 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
13+ | 1.41 EUR |
19+ | 0.94 EUR |
100+ | 0.85 EUR |
500+ | 0.66 EUR |
1000+ | 0.54 EUR |
3000+ | 0.47 EUR |
AM7330N |
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Hersteller: Analog Power Inc.
Description: MOSFET N-CH 30V 19A DFN3X3
Packaging: Bulk
Package / Case: DFN3x3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 19A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 8.2A, 10V
Power Dissipation (Max): 3.5W (Ta), 11W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Supplier Device Package: DFN3x3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 15 V
Description: MOSFET N-CH 30V 19A DFN3X3
Packaging: Bulk
Package / Case: DFN3x3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 19A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 8.2A, 10V
Power Dissipation (Max): 3.5W (Ta), 11W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Supplier Device Package: DFN3x3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 15 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
28+ | 0.63 EUR |
42+ | 0.42 EUR |
100+ | 0.38 EUR |
500+ | 0.30 EUR |
1000+ | 0.24 EUR |
AM7332N |
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Hersteller: Analog Power Inc.
Description: MOSFET N-CH 30V 33A DFN3X3
Packaging: Bulk
Package / Case: DFN3x3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 33A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 8A, 10V
Power Dissipation (Max): 3.5W (Ta), 22W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Supplier Device Package: DFN3x3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1379 pF @ 15 V
Description: MOSFET N-CH 30V 33A DFN3X3
Packaging: Bulk
Package / Case: DFN3x3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 33A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 8A, 10V
Power Dissipation (Max): 3.5W (Ta), 22W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Supplier Device Package: DFN3x3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1379 pF @ 15 V
auf Bestellung 200 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
28+ | 0.63 EUR |
42+ | 0.42 EUR |
100+ | 0.38 EUR |
AM7334N |
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Hersteller: Analog Power Inc.
Description: MOSFET N-CH 30V 17A DFN3X3
Packaging: Bulk
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta)
Rds On (Max) @ Id, Vgs: 8mOhm @ 17A, 10V
Power Dissipation (Max): 3.5W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-DFN (3x3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1456 pF @ 15 V
Description: MOSFET N-CH 30V 17A DFN3X3
Packaging: Bulk
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta)
Rds On (Max) @ Id, Vgs: 8mOhm @ 17A, 10V
Power Dissipation (Max): 3.5W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-DFN (3x3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1456 pF @ 15 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
19+ | 0.93 EUR |
29+ | 0.62 EUR |
100+ | 0.56 EUR |
500+ | 0.43 EUR |
1000+ | 0.35 EUR |
AM7336N |
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Hersteller: Analog Power Inc.
Description: MOSFET N-CH 30V 40A DFN3X3
Packaging: Bulk
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16.2A (Ta)
Rds On (Max) @ Id, Vgs: 9mOhm @ 13.6A, 4.5V
Power Dissipation (Max): 3.5W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-DFN (3x3)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2238 pF @ 15 V
Description: MOSFET N-CH 30V 40A DFN3X3
Packaging: Bulk
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16.2A (Ta)
Rds On (Max) @ Id, Vgs: 9mOhm @ 13.6A, 4.5V
Power Dissipation (Max): 3.5W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-DFN (3x3)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2238 pF @ 15 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
16+ | 1.13 EUR |
24+ | 0.75 EUR |
100+ | 0.67 EUR |
500+ | 0.52 EUR |
1000+ | 0.43 EUR |
AM7338N |
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Hersteller: Analog Power Inc.
Description: MOSFET N-CH 30V 19A DFN3X3
Packaging: Bulk
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta)
Rds On (Max) @ Id, Vgs: 6.9mOhm @ 17.6A, 10V
Power Dissipation (Max): 3.5W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-DFN (3x3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1835 pF @ 15 V
Description: MOSFET N-CH 30V 19A DFN3X3
Packaging: Bulk
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta)
Rds On (Max) @ Id, Vgs: 6.9mOhm @ 17.6A, 10V
Power Dissipation (Max): 3.5W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-DFN (3x3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1835 pF @ 15 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
24+ | 0.74 EUR |
37+ | 0.49 EUR |
100+ | 0.44 EUR |
500+ | 0.34 EUR |
1000+ | 0.28 EUR |
AM7340N |
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Hersteller: Analog Power Inc.
Description: MOSFET N-CH 40V 21A DFN3X3
Packaging: Bulk
Package / Case: DFN3x3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 16.5A, 10V
Power Dissipation (Max): 3.5W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Supplier Device Package: DFN3x3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2971 pF @ 15 V
Description: MOSFET N-CH 40V 21A DFN3X3
Packaging: Bulk
Package / Case: DFN3x3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 16.5A, 10V
Power Dissipation (Max): 3.5W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Supplier Device Package: DFN3x3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2971 pF @ 15 V
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)Im Einkaufswagen Stück im Wert von UAH