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2N7002-CT 2N7002-CT Analog Power Inc. 2N7002-5318.pdf Description: MOSFET N-CH 60V 0.6A SOT-23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 600mA (Ta)
Rds On (Max) @ Id, Vgs: 3Ohm @ 600mA, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 474 pF @ 15 V
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
24+0.74 EUR
31+0.57 EUR
100+0.34 EUR
500+0.32 EUR
1000+0.22 EUR
Mindestbestellmenge: 24
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ADC3D10065I ADC3D10065I Analog Power Inc. ADC3D10065I.pdf Description: DIODE SIL SIC 1200V 10A TO220
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 6.3pF @ 200V, 100kHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220F
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Current - Reverse Leakage @ Vr: 2 µA @ 650 V
auf Bestellung 550 Stücke:
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2+10.98 EUR
50+8.76 EUR
100+7.84 EUR
500+6.92 EUR
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ADC4D10120A ADC4D10120A Analog Power Inc. ADC4D10120A.pdf Description: DIODE SIL SIC 1200V 33A TO220-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 6.3pF @ 0V, 100kHz
Current - Average Rectified (Io): 33A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 1200 V
auf Bestellung 2500 Stücke:
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ADC4D10120D ADC4D10120D Analog Power Inc. ADC4D10120D.pdf Description: DIODE SIL SIC 1200V 9A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 6.3pF @ 0V, 100kHz
Current - Average Rectified (Io): 9A
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 1200 V
auf Bestellung 550 Stücke:
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10+18.06 EUR
100+15.62 EUR
500+14.16 EUR
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ADC4D10120E ADC4D10120E Analog Power Inc. ADC4D10120E.pdf Description: DIODE SIL SIC 1200V 33A TO252-2
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 6.3pF @ 0V, 100kHz
Current - Average Rectified (Io): 33A
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Current - Reverse Leakage @ Vr: 2 µA @ 1200 V
auf Bestellung 2500 Stücke:
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ADC4D10120H ADC4D10120H Analog Power Inc. ADC4D10120H.pdf Description: DIODE SIL SIC 1200V 31.5A TO247-
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 6.3pF @ 0V, 100kHz
Current - Average Rectified (Io): 31.5A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 1200 V
auf Bestellung 2500 Stücke:
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ADC4D20120H ADC4D20120H Analog Power Inc. ADC4D20120H.pdf Description: DIODE SIL SIC 1200V 54A TO247-2
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 12pF @ 0V, 100kHz
Current - Average Rectified (Io): 54A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
auf Bestellung 800 Stücke:
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1+39.46 EUR
10+35.07 EUR
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500+26.17 EUR
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ADC6D10065A ADC6D10065A Analog Power Inc. ADC6D10065A.pdf Description: DIODE SIL SIC 650V 37A TO220-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 6.3pF @ 0V, 100kHz
Current - Average Rectified (Io): 37A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 650 V
Produkt ist nicht verfügbar
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ADC6D10065E ADC6D10065E Analog Power Inc. ADC6D10065E.pdf Description: DIODE SIL SIC 650V 35A TO252-2
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 6.3pF @ 0V, 100kHz
Current - Average Rectified (Io): 35A
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 650 V
Produkt ist nicht verfügbar
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ADC6D10065G ADC6D10065G Analog Power Inc. ADC6D10065G.pdf Description: DIODE SIL SIC 650V 36A TO263-2
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 6.3pF @ 0V, 100kHz
Current - Average Rectified (Io): 36A
Supplier Device Package: TO-263-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 650 V
auf Bestellung 2500 Stücke:
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ADE4D20120D ADE4D20120D Analog Power Inc. ADE4D20120D.pdf Description: DIODE SIL SIC 1200V 33A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 12pF @ 0V, 100kHz
Current - Average Rectified (Io): 33A
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 20 A
Current - Reverse Leakage @ Vr: 20 µA @ 1200 V
auf Bestellung 500 Stücke:
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1+43.26 EUR
10+38.43 EUR
100+33.62 EUR
500+28.69 EUR
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ADE4D20120G ADE4D20120G Analog Power Inc. ADE4D20120G.pdf Description: DIODE SIL SIC 1200V 56A TO263-2
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 12pF @ 0V, 100kHz
Current - Average Rectified (Io): 56A
Supplier Device Package: TO-263-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 20 A
Current - Reverse Leakage @ Vr: 20 µA @ 1200 V
auf Bestellung 600 Stücke:
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1+37.72 EUR
10+33.53 EUR
100+29.32 EUR
500+25.02 EUR
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AM10N20-400D AM10N20-400D Analog Power Inc. datasheet.php?data1=DS_AM10N20-400D_1C_1 Description: MOSFET N-CH 200V 10A TO-252
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 4A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 807 pF @ 15 V
auf Bestellung 2190 Stücke:
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15+1.25 EUR
22+0.84 EUR
100+0.75 EUR
500+0.59 EUR
1000+0.48 EUR
Mindestbestellmenge: 15
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AM14N65P AM14N65P Analog Power Inc. datasheet.php?data1=DS_AM14N65P_1A_1 Description: MOSFET N-CH 650V 14A TO-220
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 3469 pF @ 15 V
auf Bestellung 1 Stücke:
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AM20N10-52PF AM20N10-52PF Analog Power Inc. datasheet.php?data1=DS_AM20N10-52PF_1A_1 Description: MOSFET N-CH 100V 20A TO-220CFM
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 10A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: TO-220CFM
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 1184 pF @ 50 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
7+2.68 EUR
50+2.15 EUR
100+1.71 EUR
500+1.45 EUR
1000+1.18 EUR
2000+1.11 EUR
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AM2301P AM2301P Analog Power Inc. datasheet.php?data1=DS_AM2301P_1A_1 Description: MOSFET P-CH -20V 2.6A SOT-23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
Rds On (Max) @ Id, Vgs: 130mOhm @ 2.3A, 4.5V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 400mV @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 674 pF @ 15 V
Produkt ist nicht verfügbar
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AM2305PE AM2305PE Analog Power Inc. AM2305PE.pdf Description: MOSFET P-CH 20V 4.5A SOT-23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Rds On (Max) @ Id, Vgs: 43mOhm @ 3.7A, 4.5V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 400mV @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 697 pF @ 15 V
auf Bestellung 5990 Stücke:
Lieferzeit 10-14 Tag (e)
77+0.23 EUR
117+0.15 EUR
129+0.14 EUR
500+0.11 EUR
1000+0.09 EUR
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AM2329P AM2329P Analog Power Inc. datasheet.php?data1=DS_AM2329P_1B_1 Description: MOSFET P-CH -30V 2.8A SOT-23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 112mOhm @ 2.5A, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 5 V
auf Bestellung 7000 Stücke:
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59+0.30 EUR
88+0.20 EUR
100+0.18 EUR
500+0.14 EUR
1000+0.12 EUR
3000+0.10 EUR
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AM2336N AM2336N Analog Power Inc. AM2336N.pdf Description: MOSFET N-CH 30V 5.3A SOT-23
Packaging: Tape & Reel (TR)
Package / Case: SC-59, SOT-23
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta)
Rds On (Max) @ Id, Vgs: 64mOhm @ 3.3A, 2.5V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 0.4V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 449 pF @ 15 V
auf Bestellung 12000 Stücke:
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3000+0.08 EUR
6000+0.07 EUR
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AM2336N-CT AM2336N-CT Analog Power Inc. AM2336N.pdf Description: MOSFET N-CH 30V 5.3A SOT-23
Packaging: Bulk
Package / Case: SOT-23
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta)
Rds On (Max) @ Id, Vgs: 64mOhm @ 3.3A, 2.5V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 400mV @ 250µA (Min)
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 449 pF @ 15 V
auf Bestellung 2400 Stücke:
Lieferzeit 10-14 Tag (e)
77+0.23 EUR
115+0.15 EUR
129+0.14 EUR
500+0.11 EUR
1000+0.09 EUR
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AM2343P AM2343P Analog Power Inc. datasheet.php?data1=DS_AM2343P_1A_2 Description: MOSFET P-CH -30V 3.9A SOT-23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta)
Rds On (Max) @ Id, Vgs: 57mOhm @ 3.6A, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 455 pF @ 15 V
auf Bestellung 9000 Stücke:
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50+0.35 EUR
75+0.24 EUR
100+0.21 EUR
500+0.17 EUR
1000+0.14 EUR
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AM2358NE AM2358NE Analog Power Inc. Description: MOSFET N-CH 60V 3.1A SOT-23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta)
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 3.6 nC @ 5 V
auf Bestellung 3500 Stücke:
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46+0.39 EUR
70+0.25 EUR
100+0.23 EUR
500+0.18 EUR
1000+0.15 EUR
3000+0.13 EUR
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AM2370N AM2370N Analog Power Inc. datasheet.php?data1=DS_AM2370N_1A_3 Description: MOSFET N-CH 100V 1.5A DFN5X6
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Rds On (Max) @ Id, Vgs: 280mOhm @ 1.8A, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 3.9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 332 pF @ 15 V
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)
35+0.51 EUR
53+0.33 EUR
100+0.30 EUR
500+0.23 EUR
1000+0.19 EUR
3000+0.17 EUR
Mindestbestellmenge: 35
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AM30N06-39D AM30N06-39D Analog Power Inc. datasheet.php?data1=DS_AM30N06-39D_1A_1 Description: MOSFET N-CH 60V 30A TO-252
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 38mOhm @ 30A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1711 pF @ 15 V
auf Bestellung 1800 Stücke:
Lieferzeit 10-14 Tag (e)
16+1.11 EUR
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500+0.52 EUR
1000+0.43 EUR
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AM320N06-02P AM320N06-02P Analog Power Inc. datasheet.php?data1=DS_AM320N06-02P_1A_1 Description: MOSFET N-CH 60V 230A TO-220
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 230A (Tc)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 230A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 13147 pF @ 15 V
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
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500+1.47 EUR
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AM3457P AM3457P Analog Power Inc. datasheet.php?data1=DS_AM3457P_C Description: MOSFET P-CH 30V 5A TSOP-6
Packaging: Bulk
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 54mOhm @ 4A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-TSOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4.9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 356 pF @ 15 V
Produkt ist nicht verfügbar
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AM3467P AM3467P Analog Power Inc. datasheet.php?data1=DS_AM3467P_1A_1 Description: MOSFET P-CH 60V 5A TSOP-6
Packaging: Bulk
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 54mOhm @ 4A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-TSOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1490 pF @ 15 V
Produkt ist nicht verfügbar
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AM40N08-30D AM40N08-30D Analog Power Inc. datasheet.php?data1=DS_AM40N08-30D_1Arev1 Description: MOSFET N-CH 80V 36A TO-252
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Ta)
Rds On (Max) @ Id, Vgs: 26mOhm @ 30A, 10V
Power Dissipation (Max): 50W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1216 pF @ 15 V
auf Bestellung 2000 Stücke:
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AM40N10-30D AM40N10-30D Analog Power Inc. datasheet.php?data1=DS_AM40N10-30D_1B_3 Description: MOSFET N-CH 100V 26A TO-252
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 10A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 14.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1216 pF @ 15 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
13+1.41 EUR
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AM40P04-20D AM40P04-20D Analog Power Inc. datasheet.php?data1=DS_AM40P04-20D_1A_1 Description: MOSFET P-CH 40V 34A TO-252
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Ta)
Rds On (Max) @ Id, Vgs: 30mOhm @ 36A, 10V
Power Dissipation (Max): 50W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 13.9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1583 pF @ 15 V
auf Bestellung 1400 Stücke:
Lieferzeit 10-14 Tag (e)
14+1.32 EUR
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AM4300N AM4300N Analog Power Inc. datasheet.php?data1=DS_AM4300N_1A_1 Description: MOSFET N-CH 150V 7.5A SO-8
Packaging: Bulk
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta)
Rds On (Max) @ Id, Vgs: 37mOhm @ 7.5A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2320 pF @ 50 V
auf Bestellung 4000 Stücke:
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11+1.65 EUR
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AM4356N AM4356N Analog Power Inc. datasheet.php?data1=DS_AM4356N_1A_1 Description: MOSFET N-CH 150V 5.7A SO-8
Packaging: Bulk
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 3A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SO-8
Drive Voltage (Max Rds On, Min Rds On): 6.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 6.5 V
Input Capacitance (Ciss) (Max) @ Vds: 968 pF @ 15 V
auf Bestellung 1700 Stücke:
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12+1.57 EUR
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AM4362N AM4362N Analog Power Inc. AM4362N.pdf Description: MOSFET N-CH 30V 19A SOIC-8
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A
Rds On (Max) @ Id, Vgs: 6mOhm @ 15A, 10V
Power Dissipation (Max): 3.1W
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2042 pF @ 15 V
auf Bestellung 3000 Stücke:
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20+0.88 EUR
30+0.59 EUR
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500+0.41 EUR
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AM4392N AM4392N Analog Power Inc. datasheet.php?data1=DS_AM4392N_1A_1 Description: MOSFET N-CH 150V 2.9A SO-8
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta)
Rds On (Max) @ Id, Vgs: 255mOhm @ 2.3A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 5.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 5.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1144 pF @ 15 V
auf Bestellung 3200 Stücke:
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13+1.36 EUR
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500+0.63 EUR
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3000+0.45 EUR
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AM4394N AM4394N Analog Power Inc. AM4394N.pdf Description: MOSFET N-CH 150V 6.5A SOIC-8
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 5.2A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 5.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 5.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4388 pF @ 15 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
16+1.16 EUR
23+0.77 EUR
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500+0.54 EUR
1000+0.44 EUR
2500+0.39 EUR
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AM4400N AM4400N Analog Power Inc. Description: MOSFET N-CH 60V 5.1A SO-8
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.1A (Ta)
Rds On (Max) @ Id, Vgs: 82mOhm @ 4A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 3.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 327 pF @ 15 V
auf Bestellung 1 Stücke:
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AM4402N AM4402N Analog Power Inc. datasheet.php?data1=DS_AM4402N_1A_1 Description: MOSFET N-CH 60V 7.4A SO-8
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.4A (Ta)
Rds On (Max) @ Id, Vgs: 38mOhm @ 6.7A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1465 pF @ 15 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
35+0.51 EUR
53+0.33 EUR
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500+0.23 EUR
1000+0.19 EUR
2500+0.17 EUR
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AM4407P AM4407P Analog Power Inc. AM4407P.pdf Description: MOSFET P-CH -30V 15A SOIC-8
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Rds On (Max) @ Id, Vgs: 13mOhm @ 9.7A, 4.5V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4441 pF @ 15 V
auf Bestellung 5100 Stücke:
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2500+0.35 EUR
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AM4407P-CT AM4407P-CT Analog Power Inc. AM4407P.pdf Description: MOSFET P-CH -30V 15A SOIC-8
Packaging: Strip
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Rds On (Max) @ Id, Vgs: 13mOhm @ 9.7A, 4.5V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOIC-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4441 pF @ 15 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
17+1.06 EUR
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AM4417P AM4417P Analog Power Inc. AM4417P.pdf Description: MOSFET P-CH -60V 11.1A SOIC-8
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11.1A (Ta)
Rds On (Max) @ Id, Vgs: 23mOhm @ 7.2A, 4.5V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 9258 pF @ 15 V
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2500+0.38 EUR
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AM4417P-CT AM4417P-CT Analog Power Inc. AM4417P.pdf Description: MOSFET P-CH -60V 11.1A SOIC-8
Packaging: Strip
Package / Case: SOIC-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11.1A (Ta)
Rds On (Max) @ Id, Vgs: 23mOhm @ 7.2A, 4.5V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOIC-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 9258 pF @ 15 V
auf Bestellung 1300 Stücke:
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15+1.21 EUR
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500+0.57 EUR
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AM4431P-CT AM4431P-CT Analog Power Inc. AM4431P.pdf Description: MOSFET P-CH -30V 21A SOIC-8
Packaging: Bulk
Package / Case: SOIC-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta)
Rds On (Max) @ Id, Vgs: 11.7mOhm @ 8.5A, 4.5V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 1V @ -250µA
Supplier Device Package: SOIC-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): -30 V
Gate Charge (Qg) (Max) @ Vgs: 136 nC @ -4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 9350 pF @ -15 V
auf Bestellung 2990 Stücke:
Lieferzeit 10-14 Tag (e)
10+1.92 EUR
14+1.28 EUR
100+1.15 EUR
500+0.90 EUR
1000+0.74 EUR
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AM4432N AM4432N Analog Power Inc. datasheet.php?data1=DS_AM4432N_1A_1 Description: MOSFET N-CH 30V 13.8A SO-8
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.8A (Ta)
Rds On (Max) @ Id, Vgs: 11mOhm @ 16.8A, 4.5V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2047 pF @ 15 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
24+0.76 EUR
35+0.50 EUR
100+0.45 EUR
500+0.35 EUR
1000+0.29 EUR
2500+0.25 EUR
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AM4434N-CT AM4434N-CT Analog Power Inc. AM4434N.pdf Description: MOSFET N-CH 30V 18.6A SOIC-8
Packaging: Bulk
Package / Case: SOIC-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18.6A (Ta)
Rds On (Max) @ Id, Vgs: 8mOhm @ 16.1A, 2.5V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOIC-8
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): 12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2586 pF @ 15 V
auf Bestellung 550 Stücke:
Lieferzeit 10-14 Tag (e)
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AM4436N AM4436N Analog Power Inc. datasheet.php?data1=DS_AM4436N_1A_1 Description: MOSFET N-CH 30V 22A SO-8
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta)
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 22A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 7686 pF @ 15 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
15+1.21 EUR
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AM4466N AM4466N Analog Power Inc. Description: MOSFET N-CH 60V 15A SO-8
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Rds On (Max) @ Id, Vgs: 8.9mOhm @ 10A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4107 pF @ 15 V
auf Bestellung 3000 Stücke:
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9+2.01 EUR
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AM4468N AM4468N Analog Power Inc. datasheet.php?data1=DS_AM4468N_1A_1 Description: MOSFET N-CH 60V 14A SO-8
Packaging: Bulk
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Rds On (Max) @ Id, Vgs: 11mOhm @ 10A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3193 pF @ 15 V
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AM4480N AM4480N Analog Power Inc. AM4480N.pdf Description: MOSFET N-CH 80V 7.1A SOIC-8
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.1A (Ta)
Rds On (Max) @ Id, Vgs: 41mOhm @ 5.4A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 19.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1522 pF @ 15 V
auf Bestellung 700 Stücke:
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18+1.00 EUR
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AM4484N AM4484N Analog Power Inc. datasheet.php?data1=DS_AM4484N_1B_1 Description: MOSFET N-CH 80V 13A SO-8
Packaging: Bulk
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
Rds On (Max) @ Id, Vgs: 12mOhm @ 8A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 7546 pF @ 15 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
13+1.41 EUR
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500+0.66 EUR
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AM4490N-CT AM4490N-CT Analog Power Inc. AM4490N.pdf Description: MOSFET N-CH 100V 5.2A SOIC-8
Packaging: Bulk
Package / Case: SOIC-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta)
Rds On (Max) @ Id, Vgs: 92mOhm @ 3.3A, 4.5V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: SOIC-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 17.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 990 pF @ 15 V
auf Bestellung 4988 Stücke:
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17+1.06 EUR
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AM4492N AM4492N Analog Power Inc. datasheet.php?data1=DS_AM4492N_1A_R2 Description: MOSFET N-CH 100V 9A SOIC-8
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 26mOhm @ 9A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 15.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1216 pF @ 15 V
auf Bestellung 800 Stücke:
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AM4496N AM4496N Analog Power Inc. datasheet.php?data1=DS_AM4496N_1A_1 Description: MOSFET N-CH 100V 7.6A SO-8
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.6A (Ta)
Rds On (Max) @ Id, Vgs: 36mOhm @ 4A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 5.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 414 pF @ 50 V
auf Bestellung 3000 Stücke:
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33+0.55 EUR
48+0.37 EUR
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500+0.26 EUR
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2500+0.18 EUR
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AM4499P AM4499P Analog Power Inc. AM4499P.pdf Description: MOSFET P-CH 60V 6.8A SOIC-8
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 5.4A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1725 pF @ 15 V
auf Bestellung 2300 Stücke:
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28+0.63 EUR
43+0.42 EUR
100+0.38 EUR
500+0.29 EUR
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AM4502C AM4502C Analog Power Inc. datasheet.php?data1=DS_AM4502C_1B_1 Description: MOSFET N/P-CH 30V 9.4A 8SO
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.1W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta), 7.9A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 1456pF @ 15V, 1934pF @ 15V
Rds On (Max) @ Id, Vgs: 23mOhm @ 8.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V, 28nC @ 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
21+0.86 EUR
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AM4502CE AM4502CE Analog Power Inc. Description: MOSFET N/P-CH 30V SO-8
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.1W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta), 7.9A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 1309pF @ 15V, 1663pF @ 15V
Rds On (Max) @ Id, Vgs: 16mOhm @ 4.7A, 10V, 23mOhm @ 3.9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V, 23nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
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AM4512C AM4512C Analog Power Inc. datasheet.php?data1=DS_AM4512C_1A_1 Description: MOSFET N/P-CH 30V 6.9A 8SO
Packaging: Bulk
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.1W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.7A (Ta), 5.2A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 519pF @ 15V, 604pF @ 15V
Rds On (Max) @ Id, Vgs: 31mOhm @ 4.7A, 10V, 52mOhm @ 4.2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V, 7nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
20+0.90 EUR
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100+0.54 EUR
500+0.42 EUR
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AM4536C AM4536C Analog Power Inc. datasheet.php?data1=DS_AM4536C_1A_1 Description: MOSFET N/P-CH 30V 7.1A 8SO
Packaging: Bulk
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.1W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7.1A (Ta), 6A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 519pF @ 15V, 597pF @ 15V
Rds On (Max) @ Id, Vgs: 28mOhm @ 5.7A, 10V, 39mOhm @ 4.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 5.8nC @ 4.5V, 19nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
auf Bestellung 1400 Stücke:
Lieferzeit 10-14 Tag (e)
11+1.71 EUR
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AM4541C AM4541C Analog Power Inc. datasheet.php?data1=DS_AM4541C_1A_2 Description: MOSFET N/P-CH 40V 5.8A 8SO
Packaging: Bulk
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.1W (Ta)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta), 3.9A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 287pF @ 15V, 384pF @ 15V
Rds On (Max) @ Id, Vgs: 42mOhm @ 5.3A, 10V, 90mOhm @ 3.6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 3.6nC @ 10V, 5.8nC @ 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
28+0.65 EUR
41+0.43 EUR
100+0.39 EUR
500+0.30 EUR
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AM4599C AM4599C Analog Power Inc. datasheet.php?data1=DS_AM4599C_1A_1 Description: MOSFET N/P-CH 60V 7.7A 8SO
Packaging: Bulk
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.1W (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 7.7A (Ta), 4.3A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 1465pF @ 15V, 1817pF @ 15V
Rds On (Max) @ Id, Vgs: 33mOhm @ 5.4A, 10V, 57mOhm @ 5.2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 5nC @ 4.5V, 20nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
9+2.01 EUR
14+1.34 EUR
100+1.21 EUR
500+0.94 EUR
1000+0.77 EUR
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AM45N06-16D AM45N06-16D Analog Power Inc. datasheet.php?data1=DS_AM45N06-16D_1A_1 Description: MOSFET N-CH 60V 45.7A TO-252
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 46A, 4.5V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 4.5 V
auf Bestellung 1 Stücke:
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2N7002-CT 2N7002-5318.pdf
2N7002-CT
Hersteller: Analog Power Inc.
Description: MOSFET N-CH 60V 0.6A SOT-23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 600mA (Ta)
Rds On (Max) @ Id, Vgs: 3Ohm @ 600mA, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 474 pF @ 15 V
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
24+0.74 EUR
31+0.57 EUR
100+0.34 EUR
500+0.32 EUR
1000+0.22 EUR
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ADC3D10065I ADC3D10065I.pdf
ADC3D10065I
Hersteller: Analog Power Inc.
Description: DIODE SIL SIC 1200V 10A TO220
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 6.3pF @ 200V, 100kHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220F
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Current - Reverse Leakage @ Vr: 2 µA @ 650 V
auf Bestellung 550 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+10.98 EUR
50+8.76 EUR
100+7.84 EUR
500+6.92 EUR
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ADC4D10120A ADC4D10120A.pdf
ADC4D10120A
Hersteller: Analog Power Inc.
Description: DIODE SIL SIC 1200V 33A TO220-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 6.3pF @ 0V, 100kHz
Current - Average Rectified (Io): 33A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 1200 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
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ADC4D10120D ADC4D10120D.pdf
ADC4D10120D
Hersteller: Analog Power Inc.
Description: DIODE SIL SIC 1200V 9A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 6.3pF @ 0V, 100kHz
Current - Average Rectified (Io): 9A
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 1200 V
auf Bestellung 550 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+20.52 EUR
10+18.06 EUR
100+15.62 EUR
500+14.16 EUR
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ADC4D10120E ADC4D10120E.pdf
ADC4D10120E
Hersteller: Analog Power Inc.
Description: DIODE SIL SIC 1200V 33A TO252-2
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 6.3pF @ 0V, 100kHz
Current - Average Rectified (Io): 33A
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Current - Reverse Leakage @ Vr: 2 µA @ 1200 V
auf Bestellung 2500 Stücke:
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ADC4D10120H ADC4D10120H.pdf
ADC4D10120H
Hersteller: Analog Power Inc.
Description: DIODE SIL SIC 1200V 31.5A TO247-
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 6.3pF @ 0V, 100kHz
Current - Average Rectified (Io): 31.5A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 1200 V
auf Bestellung 2500 Stücke:
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ADC4D20120H ADC4D20120H.pdf
ADC4D20120H
Hersteller: Analog Power Inc.
Description: DIODE SIL SIC 1200V 54A TO247-2
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 12pF @ 0V, 100kHz
Current - Average Rectified (Io): 54A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+39.46 EUR
10+35.07 EUR
100+30.67 EUR
500+26.17 EUR
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ADC6D10065A ADC6D10065A.pdf
ADC6D10065A
Hersteller: Analog Power Inc.
Description: DIODE SIL SIC 650V 37A TO220-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 6.3pF @ 0V, 100kHz
Current - Average Rectified (Io): 37A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 650 V
Produkt ist nicht verfügbar
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ADC6D10065E ADC6D10065E.pdf
ADC6D10065E
Hersteller: Analog Power Inc.
Description: DIODE SIL SIC 650V 35A TO252-2
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 6.3pF @ 0V, 100kHz
Current - Average Rectified (Io): 35A
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 650 V
Produkt ist nicht verfügbar
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ADC6D10065G ADC6D10065G.pdf
ADC6D10065G
Hersteller: Analog Power Inc.
Description: DIODE SIL SIC 650V 36A TO263-2
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 6.3pF @ 0V, 100kHz
Current - Average Rectified (Io): 36A
Supplier Device Package: TO-263-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 650 V
auf Bestellung 2500 Stücke:
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ADE4D20120D ADE4D20120D.pdf
ADE4D20120D
Hersteller: Analog Power Inc.
Description: DIODE SIL SIC 1200V 33A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 12pF @ 0V, 100kHz
Current - Average Rectified (Io): 33A
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 20 A
Current - Reverse Leakage @ Vr: 20 µA @ 1200 V
auf Bestellung 500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+43.26 EUR
10+38.43 EUR
100+33.62 EUR
500+28.69 EUR
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ADE4D20120G ADE4D20120G.pdf
ADE4D20120G
Hersteller: Analog Power Inc.
Description: DIODE SIL SIC 1200V 56A TO263-2
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 12pF @ 0V, 100kHz
Current - Average Rectified (Io): 56A
Supplier Device Package: TO-263-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 20 A
Current - Reverse Leakage @ Vr: 20 µA @ 1200 V
auf Bestellung 600 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+37.72 EUR
10+33.53 EUR
100+29.32 EUR
500+25.02 EUR
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AM10N20-400D datasheet.php?data1=DS_AM10N20-400D_1C_1
AM10N20-400D
Hersteller: Analog Power Inc.
Description: MOSFET N-CH 200V 10A TO-252
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 4A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 807 pF @ 15 V
auf Bestellung 2190 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
15+1.25 EUR
22+0.84 EUR
100+0.75 EUR
500+0.59 EUR
1000+0.48 EUR
Mindestbestellmenge: 15
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AM14N65P datasheet.php?data1=DS_AM14N65P_1A_1
AM14N65P
Hersteller: Analog Power Inc.
Description: MOSFET N-CH 650V 14A TO-220
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 3469 pF @ 15 V
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
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AM20N10-52PF datasheet.php?data1=DS_AM20N10-52PF_1A_1
AM20N10-52PF
Hersteller: Analog Power Inc.
Description: MOSFET N-CH 100V 20A TO-220CFM
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 10A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: TO-220CFM
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 1184 pF @ 50 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.68 EUR
50+2.15 EUR
100+1.71 EUR
500+1.45 EUR
1000+1.18 EUR
2000+1.11 EUR
Mindestbestellmenge: 7
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AM2301P datasheet.php?data1=DS_AM2301P_1A_1
AM2301P
Hersteller: Analog Power Inc.
Description: MOSFET P-CH -20V 2.6A SOT-23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
Rds On (Max) @ Id, Vgs: 130mOhm @ 2.3A, 4.5V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 400mV @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 674 pF @ 15 V
Produkt ist nicht verfügbar
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AM2305PE AM2305PE.pdf
AM2305PE
Hersteller: Analog Power Inc.
Description: MOSFET P-CH 20V 4.5A SOT-23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Rds On (Max) @ Id, Vgs: 43mOhm @ 3.7A, 4.5V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 400mV @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 697 pF @ 15 V
auf Bestellung 5990 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
77+0.23 EUR
117+0.15 EUR
129+0.14 EUR
500+0.11 EUR
1000+0.09 EUR
Mindestbestellmenge: 77
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AM2329P datasheet.php?data1=DS_AM2329P_1B_1
AM2329P
Hersteller: Analog Power Inc.
Description: MOSFET P-CH -30V 2.8A SOT-23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 112mOhm @ 2.5A, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 5 V
auf Bestellung 7000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
59+0.30 EUR
88+0.20 EUR
100+0.18 EUR
500+0.14 EUR
1000+0.12 EUR
3000+0.10 EUR
Mindestbestellmenge: 59
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AM2336N AM2336N.pdf
AM2336N
Hersteller: Analog Power Inc.
Description: MOSFET N-CH 30V 5.3A SOT-23
Packaging: Tape & Reel (TR)
Package / Case: SC-59, SOT-23
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta)
Rds On (Max) @ Id, Vgs: 64mOhm @ 3.3A, 2.5V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 0.4V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 449 pF @ 15 V
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.08 EUR
6000+0.07 EUR
Mindestbestellmenge: 3000
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AM2336N-CT AM2336N.pdf
AM2336N-CT
Hersteller: Analog Power Inc.
Description: MOSFET N-CH 30V 5.3A SOT-23
Packaging: Bulk
Package / Case: SOT-23
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta)
Rds On (Max) @ Id, Vgs: 64mOhm @ 3.3A, 2.5V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 400mV @ 250µA (Min)
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 449 pF @ 15 V
auf Bestellung 2400 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
77+0.23 EUR
115+0.15 EUR
129+0.14 EUR
500+0.11 EUR
1000+0.09 EUR
Mindestbestellmenge: 77
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AM2343P datasheet.php?data1=DS_AM2343P_1A_2
AM2343P
Hersteller: Analog Power Inc.
Description: MOSFET P-CH -30V 3.9A SOT-23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta)
Rds On (Max) @ Id, Vgs: 57mOhm @ 3.6A, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 455 pF @ 15 V
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
50+0.35 EUR
75+0.24 EUR
100+0.21 EUR
500+0.17 EUR
1000+0.14 EUR
Mindestbestellmenge: 50
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AM2358NE
AM2358NE
Hersteller: Analog Power Inc.
Description: MOSFET N-CH 60V 3.1A SOT-23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta)
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 3.6 nC @ 5 V
auf Bestellung 3500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
46+0.39 EUR
70+0.25 EUR
100+0.23 EUR
500+0.18 EUR
1000+0.15 EUR
3000+0.13 EUR
Mindestbestellmenge: 46
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AM2370N datasheet.php?data1=DS_AM2370N_1A_3
AM2370N
Hersteller: Analog Power Inc.
Description: MOSFET N-CH 100V 1.5A DFN5X6
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Rds On (Max) @ Id, Vgs: 280mOhm @ 1.8A, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 3.9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 332 pF @ 15 V
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
35+0.51 EUR
53+0.33 EUR
100+0.30 EUR
500+0.23 EUR
1000+0.19 EUR
3000+0.17 EUR
Mindestbestellmenge: 35
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AM30N06-39D datasheet.php?data1=DS_AM30N06-39D_1A_1
AM30N06-39D
Hersteller: Analog Power Inc.
Description: MOSFET N-CH 60V 30A TO-252
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 38mOhm @ 30A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1711 pF @ 15 V
auf Bestellung 1800 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
16+1.11 EUR
24+0.74 EUR
100+0.67 EUR
500+0.52 EUR
1000+0.43 EUR
Mindestbestellmenge: 16
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AM320N06-02P datasheet.php?data1=DS_AM320N06-02P_1A_1
AM320N06-02P
Hersteller: Analog Power Inc.
Description: MOSFET N-CH 60V 230A TO-220
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 230A (Tc)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 230A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 13147 pF @ 15 V
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.66 EUR
50+2.11 EUR
100+1.70 EUR
500+1.47 EUR
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AM3457P datasheet.php?data1=DS_AM3457P_C
AM3457P
Hersteller: Analog Power Inc.
Description: MOSFET P-CH 30V 5A TSOP-6
Packaging: Bulk
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 54mOhm @ 4A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-TSOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4.9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 356 pF @ 15 V
Produkt ist nicht verfügbar
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AM3467P datasheet.php?data1=DS_AM3467P_1A_1
AM3467P
Hersteller: Analog Power Inc.
Description: MOSFET P-CH 60V 5A TSOP-6
Packaging: Bulk
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 54mOhm @ 4A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-TSOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1490 pF @ 15 V
Produkt ist nicht verfügbar
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AM40N08-30D datasheet.php?data1=DS_AM40N08-30D_1Arev1
AM40N08-30D
Hersteller: Analog Power Inc.
Description: MOSFET N-CH 80V 36A TO-252
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Ta)
Rds On (Max) @ Id, Vgs: 26mOhm @ 30A, 10V
Power Dissipation (Max): 50W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1216 pF @ 15 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
19+0.97 EUR
28+0.64 EUR
100+0.58 EUR
500+0.45 EUR
1000+0.37 EUR
Mindestbestellmenge: 19
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AM40N10-30D datasheet.php?data1=DS_AM40N10-30D_1B_3
AM40N10-30D
Hersteller: Analog Power Inc.
Description: MOSFET N-CH 100V 26A TO-252
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 10A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 14.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1216 pF @ 15 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
13+1.41 EUR
19+0.94 EUR
100+0.85 EUR
500+0.66 EUR
1000+0.54 EUR
2500+0.47 EUR
Mindestbestellmenge: 13
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AM40P04-20D datasheet.php?data1=DS_AM40P04-20D_1A_1
AM40P04-20D
Hersteller: Analog Power Inc.
Description: MOSFET P-CH 40V 34A TO-252
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Ta)
Rds On (Max) @ Id, Vgs: 30mOhm @ 36A, 10V
Power Dissipation (Max): 50W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 13.9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1583 pF @ 15 V
auf Bestellung 1400 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
14+1.32 EUR
20+0.89 EUR
100+0.80 EUR
500+0.62 EUR
1000+0.51 EUR
Mindestbestellmenge: 14
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AM4300N datasheet.php?data1=DS_AM4300N_1A_1
AM4300N
Hersteller: Analog Power Inc.
Description: MOSFET N-CH 150V 7.5A SO-8
Packaging: Bulk
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta)
Rds On (Max) @ Id, Vgs: 37mOhm @ 7.5A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2320 pF @ 50 V
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
11+1.65 EUR
16+1.11 EUR
100+1.00 EUR
500+0.77 EUR
1000+0.64 EUR
2500+0.55 EUR
Mindestbestellmenge: 11
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AM4356N datasheet.php?data1=DS_AM4356N_1A_1
AM4356N
Hersteller: Analog Power Inc.
Description: MOSFET N-CH 150V 5.7A SO-8
Packaging: Bulk
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 3A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SO-8
Drive Voltage (Max Rds On, Min Rds On): 6.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 6.5 V
Input Capacitance (Ciss) (Max) @ Vds: 968 pF @ 15 V
auf Bestellung 1700 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
12+1.57 EUR
17+1.04 EUR
100+0.93 EUR
500+0.73 EUR
1000+0.60 EUR
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AM4362N AM4362N.pdf
AM4362N
Hersteller: Analog Power Inc.
Description: MOSFET N-CH 30V 19A SOIC-8
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A
Rds On (Max) @ Id, Vgs: 6mOhm @ 15A, 10V
Power Dissipation (Max): 3.1W
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2042 pF @ 15 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
20+0.88 EUR
30+0.59 EUR
100+0.53 EUR
500+0.41 EUR
1000+0.34 EUR
Mindestbestellmenge: 20
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AM4392N datasheet.php?data1=DS_AM4392N_1A_1
AM4392N
Hersteller: Analog Power Inc.
Description: MOSFET N-CH 150V 2.9A SO-8
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta)
Rds On (Max) @ Id, Vgs: 255mOhm @ 2.3A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 5.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 5.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1144 pF @ 15 V
auf Bestellung 3200 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
13+1.36 EUR
20+0.90 EUR
100+0.81 EUR
500+0.63 EUR
1000+0.52 EUR
3000+0.45 EUR
Mindestbestellmenge: 13
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AM4394N AM4394N.pdf
AM4394N
Hersteller: Analog Power Inc.
Description: MOSFET N-CH 150V 6.5A SOIC-8
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 5.2A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 5.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 5.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4388 pF @ 15 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
16+1.16 EUR
23+0.77 EUR
100+0.69 EUR
500+0.54 EUR
1000+0.44 EUR
2500+0.39 EUR
Mindestbestellmenge: 16
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AM4400N
AM4400N
Hersteller: Analog Power Inc.
Description: MOSFET N-CH 60V 5.1A SO-8
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.1A (Ta)
Rds On (Max) @ Id, Vgs: 82mOhm @ 4A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 3.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 327 pF @ 15 V
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
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AM4402N datasheet.php?data1=DS_AM4402N_1A_1
AM4402N
Hersteller: Analog Power Inc.
Description: MOSFET N-CH 60V 7.4A SO-8
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.4A (Ta)
Rds On (Max) @ Id, Vgs: 38mOhm @ 6.7A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1465 pF @ 15 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
35+0.51 EUR
53+0.33 EUR
100+0.30 EUR
500+0.23 EUR
1000+0.19 EUR
2500+0.17 EUR
Mindestbestellmenge: 35
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AM4407P AM4407P.pdf
AM4407P
Hersteller: Analog Power Inc.
Description: MOSFET P-CH -30V 15A SOIC-8
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Rds On (Max) @ Id, Vgs: 13mOhm @ 9.7A, 4.5V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4441 pF @ 15 V
auf Bestellung 5100 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.35 EUR
5000+0.34 EUR
Mindestbestellmenge: 2500
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AM4407P-CT AM4407P.pdf
AM4407P-CT
Hersteller: Analog Power Inc.
Description: MOSFET P-CH -30V 15A SOIC-8
Packaging: Strip
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Rds On (Max) @ Id, Vgs: 13mOhm @ 9.7A, 4.5V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOIC-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4441 pF @ 15 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
17+1.06 EUR
25+0.71 EUR
100+0.64 EUR
500+0.50 EUR
1000+0.41 EUR
Mindestbestellmenge: 17
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AM4417P AM4417P.pdf
AM4417P
Hersteller: Analog Power Inc.
Description: MOSFET P-CH -60V 11.1A SOIC-8
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11.1A (Ta)
Rds On (Max) @ Id, Vgs: 23mOhm @ 7.2A, 4.5V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 9258 pF @ 15 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.38 EUR
Mindestbestellmenge: 2500
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AM4417P-CT AM4417P.pdf
AM4417P-CT
Hersteller: Analog Power Inc.
Description: MOSFET P-CH -60V 11.1A SOIC-8
Packaging: Strip
Package / Case: SOIC-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11.1A (Ta)
Rds On (Max) @ Id, Vgs: 23mOhm @ 7.2A, 4.5V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOIC-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 9258 pF @ 15 V
auf Bestellung 1300 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
15+1.21 EUR
22+0.81 EUR
100+0.73 EUR
500+0.57 EUR
1000+0.47 EUR
Mindestbestellmenge: 15
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AM4431P-CT AM4431P.pdf
AM4431P-CT
Hersteller: Analog Power Inc.
Description: MOSFET P-CH -30V 21A SOIC-8
Packaging: Bulk
Package / Case: SOIC-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta)
Rds On (Max) @ Id, Vgs: 11.7mOhm @ 8.5A, 4.5V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 1V @ -250µA
Supplier Device Package: SOIC-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): -30 V
Gate Charge (Qg) (Max) @ Vgs: 136 nC @ -4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 9350 pF @ -15 V
auf Bestellung 2990 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+1.92 EUR
14+1.28 EUR
100+1.15 EUR
500+0.90 EUR
1000+0.74 EUR
Mindestbestellmenge: 10
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AM4432N datasheet.php?data1=DS_AM4432N_1A_1
AM4432N
Hersteller: Analog Power Inc.
Description: MOSFET N-CH 30V 13.8A SO-8
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.8A (Ta)
Rds On (Max) @ Id, Vgs: 11mOhm @ 16.8A, 4.5V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2047 pF @ 15 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
24+0.76 EUR
35+0.50 EUR
100+0.45 EUR
500+0.35 EUR
1000+0.29 EUR
2500+0.25 EUR
Mindestbestellmenge: 24
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AM4434N-CT AM4434N.pdf
AM4434N-CT
Hersteller: Analog Power Inc.
Description: MOSFET N-CH 30V 18.6A SOIC-8
Packaging: Bulk
Package / Case: SOIC-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18.6A (Ta)
Rds On (Max) @ Id, Vgs: 8mOhm @ 16.1A, 2.5V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOIC-8
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): 12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2586 pF @ 15 V
auf Bestellung 550 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
18+1.00 EUR
27+0.67 EUR
100+0.60 EUR
500+0.47 EUR
Mindestbestellmenge: 18
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AM4436N datasheet.php?data1=DS_AM4436N_1A_1
AM4436N
Hersteller: Analog Power Inc.
Description: MOSFET N-CH 30V 22A SO-8
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta)
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 22A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 7686 pF @ 15 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
15+1.21 EUR
22+0.80 EUR
100+0.72 EUR
500+0.56 EUR
1000+0.46 EUR
Mindestbestellmenge: 15
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AM4466N
AM4466N
Hersteller: Analog Power Inc.
Description: MOSFET N-CH 60V 15A SO-8
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Rds On (Max) @ Id, Vgs: 8.9mOhm @ 10A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4107 pF @ 15 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+2.01 EUR
14+1.34 EUR
100+1.21 EUR
500+0.94 EUR
1000+0.77 EUR
2500+0.67 EUR
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AM4468N datasheet.php?data1=DS_AM4468N_1A_1
AM4468N
Hersteller: Analog Power Inc.
Description: MOSFET N-CH 60V 14A SO-8
Packaging: Bulk
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Rds On (Max) @ Id, Vgs: 11mOhm @ 10A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3193 pF @ 15 V
auf Bestellung 1200 Stücke:
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Anzahl Preis
19+0.95 EUR
28+0.64 EUR
100+0.57 EUR
500+0.45 EUR
1000+0.37 EUR
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AM4480N AM4480N.pdf
AM4480N
Hersteller: Analog Power Inc.
Description: MOSFET N-CH 80V 7.1A SOIC-8
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.1A (Ta)
Rds On (Max) @ Id, Vgs: 41mOhm @ 5.4A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 19.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1522 pF @ 15 V
auf Bestellung 700 Stücke:
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Anzahl Preis
18+1.00 EUR
27+0.67 EUR
100+0.60 EUR
500+0.47 EUR
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AM4484N datasheet.php?data1=DS_AM4484N_1B_1
AM4484N
Hersteller: Analog Power Inc.
Description: MOSFET N-CH 80V 13A SO-8
Packaging: Bulk
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
Rds On (Max) @ Id, Vgs: 12mOhm @ 8A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 7546 pF @ 15 V
auf Bestellung 2000 Stücke:
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Anzahl Preis
13+1.41 EUR
19+0.94 EUR
100+0.84 EUR
500+0.66 EUR
1000+0.54 EUR
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AM4490N-CT AM4490N.pdf
AM4490N-CT
Hersteller: Analog Power Inc.
Description: MOSFET N-CH 100V 5.2A SOIC-8
Packaging: Bulk
Package / Case: SOIC-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta)
Rds On (Max) @ Id, Vgs: 92mOhm @ 3.3A, 4.5V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: SOIC-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 17.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 990 pF @ 15 V
auf Bestellung 4988 Stücke:
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Anzahl Preis
17+1.06 EUR
25+0.71 EUR
100+0.64 EUR
500+0.50 EUR
1000+0.41 EUR
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AM4492N datasheet.php?data1=DS_AM4492N_1A_R2
AM4492N
Hersteller: Analog Power Inc.
Description: MOSFET N-CH 100V 9A SOIC-8
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 26mOhm @ 9A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 15.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1216 pF @ 15 V
auf Bestellung 800 Stücke:
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Anzahl Preis
16+1.11 EUR
24+0.74 EUR
100+0.66 EUR
500+0.52 EUR
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AM4496N datasheet.php?data1=DS_AM4496N_1A_1
AM4496N
Hersteller: Analog Power Inc.
Description: MOSFET N-CH 100V 7.6A SO-8
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.6A (Ta)
Rds On (Max) @ Id, Vgs: 36mOhm @ 4A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 5.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 414 pF @ 50 V
auf Bestellung 3000 Stücke:
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Anzahl Preis
33+0.55 EUR
48+0.37 EUR
100+0.33 EUR
500+0.26 EUR
1000+0.21 EUR
2500+0.18 EUR
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AM4499P AM4499P.pdf
AM4499P
Hersteller: Analog Power Inc.
Description: MOSFET P-CH 60V 6.8A SOIC-8
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 5.4A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1725 pF @ 15 V
auf Bestellung 2300 Stücke:
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Anzahl Preis
28+0.63 EUR
43+0.42 EUR
100+0.38 EUR
500+0.29 EUR
1000+0.24 EUR
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AM4502C datasheet.php?data1=DS_AM4502C_1B_1
AM4502C
Hersteller: Analog Power Inc.
Description: MOSFET N/P-CH 30V 9.4A 8SO
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.1W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta), 7.9A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 1456pF @ 15V, 1934pF @ 15V
Rds On (Max) @ Id, Vgs: 23mOhm @ 8.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V, 28nC @ 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
21+0.86 EUR
31+0.57 EUR
100+0.51 EUR
500+0.40 EUR
1000+0.33 EUR
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AM4502CE
AM4502CE
Hersteller: Analog Power Inc.
Description: MOSFET N/P-CH 30V SO-8
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.1W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta), 7.9A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 1309pF @ 15V, 1663pF @ 15V
Rds On (Max) @ Id, Vgs: 16mOhm @ 4.7A, 10V, 23mOhm @ 3.9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V, 23nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
auf Bestellung 1 Stücke:
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AM4512C datasheet.php?data1=DS_AM4512C_1A_1
AM4512C
Hersteller: Analog Power Inc.
Description: MOSFET N/P-CH 30V 6.9A 8SO
Packaging: Bulk
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.1W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.7A (Ta), 5.2A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 519pF @ 15V, 604pF @ 15V
Rds On (Max) @ Id, Vgs: 31mOhm @ 4.7A, 10V, 52mOhm @ 4.2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V, 7nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
auf Bestellung 6000 Stücke:
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Anzahl Preis
20+0.90 EUR
30+0.60 EUR
100+0.54 EUR
500+0.42 EUR
1000+0.35 EUR
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AM4536C datasheet.php?data1=DS_AM4536C_1A_1
AM4536C
Hersteller: Analog Power Inc.
Description: MOSFET N/P-CH 30V 7.1A 8SO
Packaging: Bulk
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.1W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7.1A (Ta), 6A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 519pF @ 15V, 597pF @ 15V
Rds On (Max) @ Id, Vgs: 28mOhm @ 5.7A, 10V, 39mOhm @ 4.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 5.8nC @ 4.5V, 19nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
auf Bestellung 1400 Stücke:
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Anzahl Preis
11+1.71 EUR
16+1.14 EUR
100+1.03 EUR
500+0.80 EUR
1000+0.65 EUR
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AM4541C datasheet.php?data1=DS_AM4541C_1A_2
AM4541C
Hersteller: Analog Power Inc.
Description: MOSFET N/P-CH 40V 5.8A 8SO
Packaging: Bulk
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.1W (Ta)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta), 3.9A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 287pF @ 15V, 384pF @ 15V
Rds On (Max) @ Id, Vgs: 42mOhm @ 5.3A, 10V, 90mOhm @ 3.6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 3.6nC @ 10V, 5.8nC @ 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
28+0.65 EUR
41+0.43 EUR
100+0.39 EUR
500+0.30 EUR
1000+0.25 EUR
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AM4599C datasheet.php?data1=DS_AM4599C_1A_1
AM4599C
Hersteller: Analog Power Inc.
Description: MOSFET N/P-CH 60V 7.7A 8SO
Packaging: Bulk
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.1W (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 7.7A (Ta), 4.3A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 1465pF @ 15V, 1817pF @ 15V
Rds On (Max) @ Id, Vgs: 33mOhm @ 5.4A, 10V, 57mOhm @ 5.2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 5nC @ 4.5V, 20nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
auf Bestellung 4000 Stücke:
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Anzahl Preis
9+2.01 EUR
14+1.34 EUR
100+1.21 EUR
500+0.94 EUR
1000+0.77 EUR
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AM45N06-16D datasheet.php?data1=DS_AM45N06-16D_1A_1
AM45N06-16D
Hersteller: Analog Power Inc.
Description: MOSFET N-CH 60V 45.7A TO-252
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 46A, 4.5V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 4.5 V
auf Bestellung 1 Stücke:
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