Produkte > ANALOG POWER INC. > Alle Produkte des Herstellers ANALOG POWER INC. (358) > Seite 6 nach 6
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AMG461P | Analog Power Inc. |
Description: MOSFET P-CH 60V 14A SOT-89Packaging: Bulk Mounting Type: Surface Mount Technology: MOSFET (Metal Oxide) FET Type: P-Channel |
auf Bestellung 400 Stücke: Lieferzeit 10-14 Tag (e) |
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AMIB075N15N3 | Analog Power Inc. |
Description: MOSFET N-CH 150V 90A TO-263Packaging: Bulk Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 10mOhm @ 20A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: TO-263 Drive Voltage (Max Rds On, Min Rds On): 6.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 6.5 V Input Capacitance (Ciss) (Max) @ Vds: 4329 pF @ 50 V |
auf Bestellung 50 Stücke: Lieferzeit 10-14 Tag (e) |
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AMIB108N15N3 | Analog Power Inc. |
Description: MOSFET N-CH 150V 100A TO-263Packaging: Bulk Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 19mOhm @ 20A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: TO-263 Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 6.5 V Input Capacitance (Ciss) (Max) @ Vds: 2236 pF @ 50 V |
auf Bestellung 98 Stücke: Lieferzeit 10-14 Tag (e) |
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AMIP030N10N3 | Analog Power Inc. |
Description: MOSFET N-CH 100V 100A TO-262Packaging: Bulk Package / Case: TO-262-3 Full Pack, I2PAK Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 1V @ 1mA (Min) Supplier Device Package: TO-262 Drive Voltage (Max Rds On, Min Rds On): 6.5V, 10V Vgs (Max): ±20V |
auf Bestellung 250 Stücke: Lieferzeit 10-14 Tag (e) |
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AMIP60R180P7 | Analog Power Inc. |
Description: MOSFET N-CH 600V 60A TO-220 |
auf Bestellung 600 Stücke: Lieferzeit 10-14 Tag (e) |
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AMIRF9640S | Analog Power Inc. |
Description: MOSFET P-CH 200V 5A TO-263Packaging: Bulk |
auf Bestellung 800 Stücke: Lieferzeit 10-14 Tag (e) |
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AMIRLML6401 | Analog Power Inc. |
Description: MOSFET P-CH 20V 4.3A SOT-23Packaging: Bulk FET Type: P-Channel Mounting Type: Surface Mount Technology: MOSFET (Metal Oxide) |
auf Bestellung 300 Stücke: Lieferzeit 10-14 Tag (e) |
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AMIXFP60N25X3 | Analog Power Inc. |
Description: MOSFET N-CH 200V 90A TO220CFMPackaging: Bulk |
auf Bestellung 600 Stücke: Lieferzeit 10-14 Tag (e) |
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AMK431P | Analog Power Inc. |
Description: MOSFET P-CH 30V 0.68A SOT-723Packaging: Bulk FET Type: P-Channel |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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AMNX7002AK | Analog Power Inc. |
Description: MOSFET N-CH 60V 0.44A SOT-23 |
auf Bestellung 1 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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AMPMZ350UPEP | Analog Power Inc. |
Description: MOSFET N-CH 20V 0.9A SOT-883Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Supplier Device Package: SOT-883 Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 400mW Rds On (Max) @ Id, Vgs: 310mOhm @ 200mA, 4.5V Current - Continuous Drain (Id) @ 25°C: 900mA (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-101, SOT-883 Packaging: Bulk Input Capacitance (Ciss) (Max) @ Vds: 54 pF @ 16 V Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±8V |
auf Bestellung 19000 Stücke: Lieferzeit 10-14 Tag (e) |
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AMR416N | Analog Power Inc. |
Description: MOSFET N-CH 100V 75A DFN5X6Packaging: Bulk Input Capacitance (Ciss) (Max) @ Vds: 7442 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 4.5 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: 8-DFN (5x6) Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 5W (Ta) Rds On (Max) @ Id, Vgs: 10mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 18A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN |
auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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AMR424N | Analog Power Inc. |
Description: MOSFET N-CH 100V 100A DFN5X6Packaging: Bulk Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 6.2mOhm @ 10A, 10V Power Dissipation (Max): 5W (Ta), 125W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 8-DFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2979 pF @ 15 V |
auf Bestellung 150 Stücke: Lieferzeit 10-14 Tag (e) |
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AMR426N | Analog Power Inc. |
Description: MOSFET N-CH 50V 180A DFN5X6Packaging: Bulk Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 48A (Ta), 180A (Tc) Rds On (Max) @ Id, Vgs: 2mOhm @ 20A, 10V Power Dissipation (Max): 6.9W (Ta), 156W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 8-DFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 50 V Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 7723 pF @ 15 V |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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AMR428N | Analog Power Inc. |
Description: MOSFET N-CH 60V 100A DFN5X6Packaging: Bulk Mounting Type: Surface Mount Technology: MOSFET (Metal Oxide) FET Type: N-Channel |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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AMR430N | Analog Power Inc. |
Description: MOSFET N-CH 30V 26A DFN5X6 |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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AMR438N | Analog Power Inc. |
Description: MOSFET N-CH 30V 112A DFN5X6Packaging: Bulk Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 42A (Ta), 112A (Tc) Rds On (Max) @ Id, Vgs: 1.9mOhm @ 20A, 10V Power Dissipation (Max): 5W (Ta), 83W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 8-DFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 5770 pF @ 15 V |
auf Bestellung 2200 Stücke: Lieferzeit 10-14 Tag (e) |
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AMR440N | Analog Power Inc. |
Description: MOSFET N-CH 40V 100A DFN5X6Packaging: Bulk Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 44A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 2.6mOhm @ 20A, 10V Power Dissipation (Max): 5W (Ta), 83W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 8-DFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 7019 pF @ 15 V |
auf Bestellung 1750 Stücke: Lieferzeit 10-14 Tag (e) |
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AMR441P | Analog Power Inc. |
Description: MOSFET P-CH 40V 125A DFN5X6FET Type: P-Channel Technology: MOSFET (Metal Oxide) Mounting Type: Surface Mount Packaging: Bulk |
auf Bestellung 1500 Stücke: Lieferzeit 10-14 Tag (e) |
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AMR446N | Analog Power Inc. |
Description: MOSFET N-CH 100V 80A DFN5X6Packaging: Bulk Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 80A (Tc) Rds On (Max) @ Id, Vgs: 6mOhm @ 12A, 10V Power Dissipation (Max): 5W (Ta), 125W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 8-DFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 6.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 6.5 V Input Capacitance (Ciss) (Max) @ Vds: 2941 pF @ 15 V |
auf Bestellung 3580 Stücke: Lieferzeit 10-14 Tag (e) |
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AMR448N | Analog Power Inc. |
Description: MOSFET N-CH 100V 80A DFN5x6Input Capacitance (Ciss) (Max) @ Vds: 2681 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 6.5 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6.5V, 10V Supplier Device Package: 8-DFN (5.2x5.55) Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 10A, 6.5V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Bulk |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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AMR448N-CT | Analog Power Inc. |
Description: MOSFET N-CH 100V 80A DFN5x6Packaging: Bulk Package / Case: DFN5x6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 10A, 6.5V Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: DFN5x6 Drive Voltage (Max Rds On, Min Rds On): 6.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 6.5 V Input Capacitance (Ciss) (Max) @ Vds: 2681 pF @ 50 V |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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AMR452N | Analog Power Inc. |
Description: MOSFET N-CH 100V 20A DFN5X6Input Capacitance (Ciss) (Max) @ Vds: 404 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 4.5 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: 8-DFN (5.2x5.55) Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 23W (Tc) Rds On (Max) @ Id, Vgs: 50mOhm @ 4A, 4.5V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Bulk |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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AMR452N-CT | Analog Power Inc. |
Description: MOSFET N-CH 100V 20A DFN5X6Input Capacitance (Ciss) (Max) @ Vds: 404 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 4.5 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: DFN5x6 Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 23W (Tc) Rds On (Max) @ Id, Vgs: 50mOhm @ 4A, 4.5V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: DFN5x6 Packaging: Bulk |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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AMR461P | Analog Power Inc. |
Description: MOSFET P-CH 60V 100A DFN5X6Packaging: Bulk Mounting Type: Surface Mount Technology: MOSFET (Metal Oxide) FET Type: P-Channel |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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AMR462N | Analog Power Inc. |
Description: MOSFET N-CH 60V 80A DFN5X6Packaging: Bulk Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 28A (Ta) Rds On (Max) @ Id, Vgs: 4.3mOhm @ 20A, 10V Power Dissipation (Max): 5W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 8-DFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 7283 pF @ 15 V |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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AMR464N | Analog Power Inc. |
Description: MOSFET N-CH 60V 87A DFN5X6Packaging: Bulk Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 87A (Tc) Rds On (Max) @ Id, Vgs: 5.3mOhm @ 13A, 10V Power Dissipation (Max): 5W (Ta), 63W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 8-DFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1505 pF @ 30 V |
auf Bestellung 900 Stücke: Lieferzeit 10-14 Tag (e) |
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AMR466N | Analog Power Inc. |
Description: MOSFET N-CH 60V 28A DFN5X6Packaging: Bulk Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 28A (Tc) Rds On (Max) @ Id, Vgs: 16mOhm @ 7A, 10V Power Dissipation (Max): 5W (Ta), 22W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 8-DFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 484 pF @ 20 V |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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AMR472N | Analog Power Inc. |
Description: MOSFET N-CH 100V 59A DFN5X6Packaging: Bulk Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 59A (Tc) Rds On (Max) @ Id, Vgs: 12mOhm @ 8A, 10V Power Dissipation (Max): 5W (Ta), 63W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 8-DFN (5.2x5.55) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1213 pF @ 50 V |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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AMR474N | Analog Power Inc. |
Description: MOSFET N-CH 40V 40A DFN5X6Packaging: Bulk Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 40A (Tc) Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 10V Power Dissipation (Max): 5W (Ta), 23W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 8-DFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1456 pF @ 20 V |
auf Bestellung 800 Stücke: Lieferzeit 10-14 Tag (e) |
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AMR482N | Analog Power Inc. |
Description: MOSFET N-CH 80V 77A DFN5X6Packaging: Bulk Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 77A (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 11A, 10V Power Dissipation (Max): 5W (Ta), 63W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 8-DFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1551 pF @ 40 V |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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AMRA02N | Analog Power Inc. |
Description: MOSFET N-CH 300V 7.4A DFN5X6Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta), 7.4A (Tc) Rds On (Max) @ Id, Vgs: 800mOhm @ 1.5A, 10V Power Dissipation (Max): 2.5W (Ta), 65.5W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 8-DFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 300 V Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 6 V Input Capacitance (Ciss) (Max) @ Vds: 697 pF @ 50 V |
auf Bestellung 2000 Stücke: Lieferzeit 10-14 Tag (e) |
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AMRA08N | Analog Power Inc. |
Description: MOSFET N-CH 30V 100A DFN5X6 |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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AMRA10N | Analog Power Inc. |
Description: MOSFET N-CH 100V 62.7A DFN5X6Packaging: Bulk Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12.4A (Ta), 62.7A (Tc) Rds On (Max) @ Id, Vgs: 11mOhm @ 12A, 10V Power Dissipation (Max): 2.5W (Ta), 64.8W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 8-DFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 6.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 6.5 V Input Capacitance (Ciss) (Max) @ Vds: 1248 pF @ 50 V |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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AMRA16N | Analog Power Inc. |
Description: MOSFET N-CH 30V 100A DFN5X6 |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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| AMRE1L002SN | Analog Power Inc. | Description: MOSFET N-CH 60V 0.32A SC89-3 |
auf Bestellung 4000 Stücke: Lieferzeit 10-14 Tag (e) |
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AMRM01P | Analog Power Inc. |
Description: MOSFET P-CH 500V 2.7A DFN5X6Packaging: Bulk Mounting Type: Surface Mount Technology: MOSFET (Metal Oxide) FET Type: P-Channel |
auf Bestellung 1600 Stücke: Lieferzeit 10-14 Tag (e) |
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AMRM82N | Analog Power Inc. |
Description: MOSFET N-CH 80V 100A DFN5X6 |
auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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AMS424N | Analog Power Inc. |
Description: MOSFET N-CH 40V 60A DFN3X3Packaging: Bulk Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 60A (Tc) Rds On (Max) @ Id, Vgs: 3.2mOhm @ 16A, 10V Power Dissipation (Max): 4.6W (Ta), 83W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 8-DFN (3.3x3.3) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 3905 pF @ 15 V |
auf Bestellung 1150 Stücke: Lieferzeit 10-14 Tag (e) |
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AMS428N | Analog Power Inc. |
Description: MOSFET N-CH 60V 50A DFN3X3Packaging: Bulk Package / Case: 8-PowerDFN Mounting Type: Surface Mount Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A Power Dissipation (Max): 83W Supplier Device Package: 8-DFN (3x3) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): 20V Drain to Source Voltage (Vdss): 60 V |
auf Bestellung 580 Stücke: Lieferzeit 10-14 Tag (e) |
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AMS431P | Analog Power Inc. |
Description: MOSFET P-CH 30V 50A DFN3X3Packaging: Bulk |
auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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AMS441P | Analog Power Inc. |
Description: MOSFET P-CH -40V 50A DFN3X3Packaging: Bulk Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 50A (Tc) Rds On (Max) @ Id, Vgs: 7.5mOhm @ 10A, 10V Power Dissipation (Max): 4.6W (Ta), 83W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 8-DFN (3.3x3.3) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 4147 pF @ 15 V |
auf Bestellung 100 Stücke: Lieferzeit 10-14 Tag (e) |
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AMSi1012X | Analog Power Inc. |
Description: MOSFET N-CH 60V 0.5A SC89-3 |
auf Bestellung 4000 Stücke: Lieferzeit 10-14 Tag (e) |
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| AMSi1062X | Analog Power Inc. | Description: MOSFET N-CH 30V 0.172A SC89-3 |
auf Bestellung 4000 Stücke: Lieferzeit 10-14 Tag (e) |
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AMSM03P | Analog Power Inc. |
Description: MOSFET P-CH 500V 2.5A DFN3X3Packaging: Bulk |
auf Bestellung 2800 Stücke: Lieferzeit 10-14 Tag (e) |
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AMSM07P | Analog Power Inc. |
Description: MOSFET P-CH 650V 1.99A DFN3X3Packaging: Bulk |
auf Bestellung 2900 Stücke: Lieferzeit 10-14 Tag (e) |
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AMTK20A60W | Analog Power Inc. |
Description: MOSFET P-CH 600V 20A TO-220CFMPackaging: Bulk Technology: MOSFET (Metal Oxide) FET Type: N-Channel |
auf Bestellung 2000 Stücke: Lieferzeit 10-14 Tag (e) |
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AMTP65H150G4LSGB | Analog Power Inc. |
Description: GAN FET N-CH 650V 13A DFN8X8Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 400 V Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 6 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): ±18V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: 4-DFN (8x8) Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 52W (Tc) Rds On (Max) @ Id, Vgs: 180mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 13A (Tc) FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 4-PowerTSFN Packaging: Bulk |
auf Bestellung 10 Stücke: Lieferzeit 10-14 Tag (e) |
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AMTP65H150G4PS | Analog Power Inc. |
Description: GAN FET N-CH 650V TO-220Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-220AB Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 150mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 13A (Tc) FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 598 pF @ 400 V Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 6 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): ±20V |
auf Bestellung 1 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS126 | Analog Power Inc. |
Description: MOSFET N-CH D-MODE 600V 0.112A S |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS131 | Analog Power Inc. |
Description: MOSFET N-CH 250V 0.401A SOT-23 |
auf Bestellung 1600 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS138N | Analog Power Inc. |
Description: DIODE SIL SIC 60V 0.6A SOT-23Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 500mA (Ta) Rds On (Max) @ Id, Vgs: 3.5Ohm @ 500mA, 10V Power Dissipation (Max): 1.3W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23 Drive Voltage (Max Rds On, Min Rds On): 2.75V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 50 V Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 15 V |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS138N-CT | Analog Power Inc. |
Description: MOSFET N-CH 60V 0.6A SOT-23Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 600mA (Ta) Rds On (Max) @ Id, Vgs: 2.5Ohm @ 500mA, 10V Power Dissipation (Max): 1.3W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 15 V |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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| BSS83 | Analog Power Inc. | Description: MOSFET P-CH 60V 1.1A SOT-23 |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS84 | Analog Power Inc. |
Description: MOSFET P-CH 50V 0.3A SOT-23 |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS8402DW | Analog Power Inc. |
Description: MOSFET N-CH 60V 0.7A SC70-6 |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS84AKS | Analog Power Inc. |
Description: MOSFET P-CH 60V 0.4A SC70-6Packaging: Bulk Package / Case: PowerPAK® SC-70-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 400mA (Ta) Power Dissipation (Max): 300mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA (Min) Supplier Device Package: SC-70-6 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS84AKW | Analog Power Inc. |
Description: MOSFET P-CH 60V 0.174A SC70-3Packaging: Bulk |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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| AMG461P |
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Hersteller: Analog Power Inc.
Description: MOSFET P-CH 60V 14A SOT-89
Packaging: Bulk
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Description: MOSFET P-CH 60V 14A SOT-89
Packaging: Bulk
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
auf Bestellung 400 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 20+ | 1.09 EUR |
| 29+ | 0.73 EUR |
| 100+ | 0.65 EUR |
| AMIB075N15N3 |
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Hersteller: Analog Power Inc.
Description: MOSFET N-CH 150V 90A TO-263
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 20A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-263
Drive Voltage (Max Rds On, Min Rds On): 6.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 6.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4329 pF @ 50 V
Description: MOSFET N-CH 150V 90A TO-263
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 20A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-263
Drive Voltage (Max Rds On, Min Rds On): 6.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 6.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4329 pF @ 50 V
auf Bestellung 50 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 6.7 EUR |
| 10+ | 4.46 EUR |
| AMIB108N15N3 |
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Hersteller: Analog Power Inc.
Description: MOSFET N-CH 150V 100A TO-263
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 20A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: TO-263
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 6.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2236 pF @ 50 V
Description: MOSFET N-CH 150V 100A TO-263
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 20A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: TO-263
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 6.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2236 pF @ 50 V
auf Bestellung 98 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 6+ | 3.61 EUR |
| 10+ | 2.4 EUR |
| AMIP030N10N3 |
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Hersteller: Analog Power Inc.
Description: MOSFET N-CH 100V 100A TO-262
Packaging: Bulk
Package / Case: TO-262-3 Full Pack, I2PAK
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 1V @ 1mA (Min)
Supplier Device Package: TO-262
Drive Voltage (Max Rds On, Min Rds On): 6.5V, 10V
Vgs (Max): ±20V
Description: MOSFET N-CH 100V 100A TO-262
Packaging: Bulk
Package / Case: TO-262-3 Full Pack, I2PAK
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 1V @ 1mA (Min)
Supplier Device Package: TO-262
Drive Voltage (Max Rds On, Min Rds On): 6.5V, 10V
Vgs (Max): ±20V
auf Bestellung 250 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 8+ | 2.78 EUR |
| 50+ | 2.2 EUR |
| 100+ | 1.77 EUR |
| AMIP60R180P7 |
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Hersteller: Analog Power Inc.
Description: MOSFET N-CH 600V 60A TO-220
Description: MOSFET N-CH 600V 60A TO-220
auf Bestellung 600 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 10.14 EUR |
| 50+ | 5.01 EUR |
| 100+ | 4.51 EUR |
| 500+ | 3.64 EUR |
| AMIRF9640S |
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auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 11.27 EUR |
| 10+ | 7.43 EUR |
| 100+ | 5.25 EUR |
| 500+ | 4.68 EUR |
| 800+ | 4.12 EUR |
| AMIRLML6401 |
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Hersteller: Analog Power Inc.
Description: MOSFET P-CH 20V 4.3A SOT-23
Packaging: Bulk
FET Type: P-Channel
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
Description: MOSFET P-CH 20V 4.3A SOT-23
Packaging: Bulk
FET Type: P-Channel
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
auf Bestellung 300 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 14+ | 1.52 EUR |
| 25+ | 0.86 EUR |
| 100+ | 0.55 EUR |
| AMIXFP60N25X3 |
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auf Bestellung 600 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 26.05 EUR |
| 50+ | 14.34 EUR |
| 100+ | 13.21 EUR |
| 500+ | 11.69 EUR |
| AMK431P |
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Hersteller: Analog Power Inc.
Description: MOSFET P-CH 30V 0.68A SOT-723
Packaging: Bulk
FET Type: P-Channel
Description: MOSFET P-CH 30V 0.68A SOT-723
Packaging: Bulk
FET Type: P-Channel
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 63+ | 0.33 EUR |
| 87+ | 0.24 EUR |
| 161+ | 0.13 EUR |
| 500+ | 0.12 EUR |
| 1000+ | 0.12 EUR |
| 2000+ | 0.1 EUR |
| AMNX7002AK |
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Hersteller: Analog Power Inc.
Description: MOSFET N-CH 60V 0.44A SOT-23
Description: MOSFET N-CH 60V 0.44A SOT-23
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
| AMPMZ350UPEP |
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Hersteller: Analog Power Inc.
Description: MOSFET N-CH 20V 0.9A SOT-883
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: SOT-883
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 400mW
Rds On (Max) @ Id, Vgs: 310mOhm @ 200mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 900mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-101, SOT-883
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 54 pF @ 16 V
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Description: MOSFET N-CH 20V 0.9A SOT-883
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: SOT-883
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 400mW
Rds On (Max) @ Id, Vgs: 310mOhm @ 200mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 900mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-101, SOT-883
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 54 pF @ 16 V
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
auf Bestellung 19000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 39+ | 0.55 EUR |
| 60+ | 0.36 EUR |
| 145+ | 0.14 EUR |
| 1000+ | 0.13 EUR |
| 5000+ | 0.11 EUR |
| 10000+ | 0.087 EUR |
| AMR416N |
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Hersteller: Analog Power Inc.
Description: MOSFET N-CH 100V 75A DFN5X6
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 7442 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 4.5 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-DFN (5x6)
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 5W (Ta)
Rds On (Max) @ Id, Vgs: 10mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Description: MOSFET N-CH 100V 75A DFN5X6
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 7442 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 4.5 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-DFN (5x6)
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 5W (Ta)
Rds On (Max) @ Id, Vgs: 10mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 4.36 EUR |
| 10+ | 2.9 EUR |
| 100+ | 2.61 EUR |
| 500+ | 2.03 EUR |
| 1000+ | 1.67 EUR |
| AMR424N |
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Hersteller: Analog Power Inc.
Description: MOSFET N-CH 100V 100A DFN5X6
Packaging: Bulk
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 10A, 10V
Power Dissipation (Max): 5W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2979 pF @ 15 V
Description: MOSFET N-CH 100V 100A DFN5X6
Packaging: Bulk
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 10A, 10V
Power Dissipation (Max): 5W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2979 pF @ 15 V
auf Bestellung 150 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 7+ | 3.01 EUR |
| 11+ | 2.01 EUR |
| 100+ | 1.81 EUR |
| AMR426N |
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Hersteller: Analog Power Inc.
Description: MOSFET N-CH 50V 180A DFN5X6
Packaging: Bulk
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Ta), 180A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 20A, 10V
Power Dissipation (Max): 6.9W (Ta), 156W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 7723 pF @ 15 V
Description: MOSFET N-CH 50V 180A DFN5X6
Packaging: Bulk
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Ta), 180A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 20A, 10V
Power Dissipation (Max): 6.9W (Ta), 156W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 7723 pF @ 15 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 10+ | 2.12 EUR |
| 15+ | 1.42 EUR |
| 100+ | 1.27 EUR |
| 500+ | 0.99 EUR |
| 1000+ | 0.81 EUR |
| 3000+ | 0.7 EUR |
| AMR428N |
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Hersteller: Analog Power Inc.
Description: MOSFET N-CH 60V 100A DFN5X6
Packaging: Bulk
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Description: MOSFET N-CH 60V 100A DFN5X6
Packaging: Bulk
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 8.4 EUR |
| 10+ | 5.59 EUR |
| 100+ | 5.03 EUR |
| 500+ | 3.92 EUR |
| 1000+ | 3.21 EUR |
| 3000+ | 2.8 EUR |
| AMR430N |
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Hersteller: Analog Power Inc.
Description: MOSFET N-CH 30V 26A DFN5X6
Description: MOSFET N-CH 30V 26A DFN5X6
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 10+ | 2.24 EUR |
| 15+ | 1.49 EUR |
| 100+ | 1.34 EUR |
| 500+ | 1.05 EUR |
| 1000+ | 0.86 EUR |
| 3000+ | 0.75 EUR |
| AMR438N |
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Hersteller: Analog Power Inc.
Description: MOSFET N-CH 30V 112A DFN5X6
Packaging: Bulk
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Ta), 112A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 20A, 10V
Power Dissipation (Max): 5W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 5770 pF @ 15 V
Description: MOSFET N-CH 30V 112A DFN5X6
Packaging: Bulk
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Ta), 112A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 20A, 10V
Power Dissipation (Max): 5W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 5770 pF @ 15 V
auf Bestellung 2200 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 8+ | 2.89 EUR |
| 11+ | 1.93 EUR |
| 100+ | 1.74 EUR |
| 500+ | 1.36 EUR |
| 1000+ | 1.11 EUR |
| AMR440N |
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Hersteller: Analog Power Inc.
Description: MOSFET N-CH 40V 100A DFN5X6
Packaging: Bulk
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 20A, 10V
Power Dissipation (Max): 5W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 7019 pF @ 15 V
Description: MOSFET N-CH 40V 100A DFN5X6
Packaging: Bulk
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 20A, 10V
Power Dissipation (Max): 5W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 7019 pF @ 15 V
auf Bestellung 1750 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 4.33 EUR |
| 10+ | 2.89 EUR |
| 100+ | 2.61 EUR |
| 500+ | 2.02 EUR |
| 1000+ | 1.67 EUR |
| AMR441P |
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Hersteller: Analog Power Inc.
Description: MOSFET P-CH 40V 125A DFN5X6
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Packaging: Bulk
Description: MOSFET P-CH 40V 125A DFN5X6
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Packaging: Bulk
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 6+ | 3.81 EUR |
| 10+ | 2.53 EUR |
| 100+ | 2.28 EUR |
| 500+ | 1.77 EUR |
| 1000+ | 1.45 EUR |
| AMR446N |
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Hersteller: Analog Power Inc.
Description: MOSFET N-CH 100V 80A DFN5X6
Packaging: Bulk
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 80A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 12A, 10V
Power Dissipation (Max): 5W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 6.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 6.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2941 pF @ 15 V
Description: MOSFET N-CH 100V 80A DFN5X6
Packaging: Bulk
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 80A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 12A, 10V
Power Dissipation (Max): 5W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 6.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 6.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2941 pF @ 15 V
auf Bestellung 3580 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 11+ | 2.05 EUR |
| 16+ | 1.37 EUR |
| 100+ | 1.24 EUR |
| 500+ | 0.96 EUR |
| 1000+ | 0.79 EUR |
| 3000+ | 0.69 EUR |
| AMR448N |
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Hersteller: Analog Power Inc.
Description: MOSFET N-CH 100V 80A DFN5x6
Input Capacitance (Ciss) (Max) @ Vds: 2681 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 6.5 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6.5V, 10V
Supplier Device Package: 8-DFN (5.2x5.55)
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 125W (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 10A, 6.5V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Bulk
Description: MOSFET N-CH 100V 80A DFN5x6
Input Capacitance (Ciss) (Max) @ Vds: 2681 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 6.5 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6.5V, 10V
Supplier Device Package: 8-DFN (5.2x5.55)
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 125W (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 10A, 6.5V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Bulk
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.55 EUR |
| AMR448N-CT |
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Hersteller: Analog Power Inc.
Description: MOSFET N-CH 100V 80A DFN5x6
Packaging: Bulk
Package / Case: DFN5x6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 10A, 6.5V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: DFN5x6
Drive Voltage (Max Rds On, Min Rds On): 6.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 6.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2681 pF @ 50 V
Description: MOSFET N-CH 100V 80A DFN5x6
Packaging: Bulk
Package / Case: DFN5x6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 10A, 6.5V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: DFN5x6
Drive Voltage (Max Rds On, Min Rds On): 6.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 6.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2681 pF @ 50 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 7+ | 3.36 EUR |
| 10+ | 2.24 EUR |
| 100+ | 2.01 EUR |
| 500+ | 1.56 EUR |
| 1000+ | 1.29 EUR |
| 3000+ | 1.12 EUR |
| AMR452N |
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Hersteller: Analog Power Inc.
Description: MOSFET N-CH 100V 20A DFN5X6
Input Capacitance (Ciss) (Max) @ Vds: 404 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 4.5 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-DFN (5.2x5.55)
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 23W (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Bulk
Description: MOSFET N-CH 100V 20A DFN5X6
Input Capacitance (Ciss) (Max) @ Vds: 404 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 4.5 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-DFN (5.2x5.55)
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 23W (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Bulk
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.89 EUR |
| AMR452N-CT |
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Hersteller: Analog Power Inc.
Description: MOSFET N-CH 100V 20A DFN5X6
Input Capacitance (Ciss) (Max) @ Vds: 404 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 4.5 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: DFN5x6
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 23W (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DFN5x6
Packaging: Bulk
Description: MOSFET N-CH 100V 20A DFN5X6
Input Capacitance (Ciss) (Max) @ Vds: 404 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 4.5 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: DFN5x6
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 23W (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DFN5x6
Packaging: Bulk
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 8+ | 2.68 EUR |
| 12+ | 1.78 EUR |
| 100+ | 1.61 EUR |
| 500+ | 1.25 EUR |
| 1000+ | 1.02 EUR |
| 3000+ | 0.89 EUR |
| AMR461P |
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Hersteller: Analog Power Inc.
Description: MOSFET P-CH 60V 100A DFN5X6
Packaging: Bulk
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Description: MOSFET P-CH 60V 100A DFN5X6
Packaging: Bulk
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 8.25 EUR |
| 10+ | 5.51 EUR |
| 100+ | 4.95 EUR |
| 500+ | 3.86 EUR |
| 1000+ | 3.17 EUR |
| 3000+ | 2.75 EUR |
| AMR462N |
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Hersteller: Analog Power Inc.
Description: MOSFET N-CH 60V 80A DFN5X6
Packaging: Bulk
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Ta)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 20A, 10V
Power Dissipation (Max): 5W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 7283 pF @ 15 V
Description: MOSFET N-CH 60V 80A DFN5X6
Packaging: Bulk
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Ta)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 20A, 10V
Power Dissipation (Max): 5W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 7283 pF @ 15 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 8+ | 2.87 EUR |
| 11+ | 1.92 EUR |
| 100+ | 1.73 EUR |
| 500+ | 1.34 EUR |
| 1000+ | 1.11 EUR |
| 3000+ | 0.95 EUR |
| AMR464N |
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Hersteller: Analog Power Inc.
Description: MOSFET N-CH 60V 87A DFN5X6
Packaging: Bulk
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 87A (Tc)
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 13A, 10V
Power Dissipation (Max): 5W (Ta), 63W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1505 pF @ 30 V
Description: MOSFET N-CH 60V 87A DFN5X6
Packaging: Bulk
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 87A (Tc)
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 13A, 10V
Power Dissipation (Max): 5W (Ta), 63W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1505 pF @ 30 V
auf Bestellung 900 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 7+ | 3.25 EUR |
| 10+ | 2.15 EUR |
| 100+ | 1.94 EUR |
| 500+ | 1.51 EUR |
| AMR466N |
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Hersteller: Analog Power Inc.
Description: MOSFET N-CH 60V 28A DFN5X6
Packaging: Bulk
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 28A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 7A, 10V
Power Dissipation (Max): 5W (Ta), 22W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 484 pF @ 20 V
Description: MOSFET N-CH 60V 28A DFN5X6
Packaging: Bulk
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 28A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 7A, 10V
Power Dissipation (Max): 5W (Ta), 22W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 484 pF @ 20 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 10+ | 2.12 EUR |
| 15+ | 1.42 EUR |
| 100+ | 1.27 EUR |
| 500+ | 0.99 EUR |
| 1000+ | 0.81 EUR |
| 3000+ | 0.7 EUR |
| AMR472N |
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Hersteller: Analog Power Inc.
Description: MOSFET N-CH 100V 59A DFN5X6
Packaging: Bulk
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 59A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 8A, 10V
Power Dissipation (Max): 5W (Ta), 63W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-DFN (5.2x5.55)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1213 pF @ 50 V
Description: MOSFET N-CH 100V 59A DFN5X6
Packaging: Bulk
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 59A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 8A, 10V
Power Dissipation (Max): 5W (Ta), 63W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-DFN (5.2x5.55)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1213 pF @ 50 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 12+ | 1.8 EUR |
| 18+ | 1.19 EUR |
| 100+ | 1.07 EUR |
| 500+ | 0.83 EUR |
| 1000+ | 0.69 EUR |
| 3000+ | 0.6 EUR |
| AMR474N |
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Hersteller: Analog Power Inc.
Description: MOSFET N-CH 40V 40A DFN5X6
Packaging: Bulk
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 10V
Power Dissipation (Max): 5W (Ta), 23W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1456 pF @ 20 V
Description: MOSFET N-CH 40V 40A DFN5X6
Packaging: Bulk
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 10V
Power Dissipation (Max): 5W (Ta), 23W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1456 pF @ 20 V
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 10+ | 2.12 EUR |
| 15+ | 1.42 EUR |
| 100+ | 1.27 EUR |
| 500+ | 0.99 EUR |
| AMR482N |
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Hersteller: Analog Power Inc.
Description: MOSFET N-CH 80V 77A DFN5X6
Packaging: Bulk
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 77A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 11A, 10V
Power Dissipation (Max): 5W (Ta), 63W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1551 pF @ 40 V
Description: MOSFET N-CH 80V 77A DFN5X6
Packaging: Bulk
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 77A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 11A, 10V
Power Dissipation (Max): 5W (Ta), 63W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1551 pF @ 40 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 7+ | 3.36 EUR |
| 10+ | 2.24 EUR |
| 100+ | 2.01 EUR |
| 500+ | 1.56 EUR |
| 1000+ | 1.29 EUR |
| 3000+ | 1.12 EUR |
| AMRA02N |
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Hersteller: Analog Power Inc.
Description: MOSFET N-CH 300V 7.4A DFN5X6
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta), 7.4A (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 1.5A, 10V
Power Dissipation (Max): 2.5W (Ta), 65.5W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 697 pF @ 50 V
Description: MOSFET N-CH 300V 7.4A DFN5X6
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta), 7.4A (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 1.5A, 10V
Power Dissipation (Max): 2.5W (Ta), 65.5W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 697 pF @ 50 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 7+ | 3.25 EUR |
| 10+ | 2.15 EUR |
| 100+ | 1.94 EUR |
| 500+ | 1.51 EUR |
| 1000+ | 1.24 EUR |
| AMRA08N |
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Hersteller: Analog Power Inc.
Description: MOSFET N-CH 30V 100A DFN5X6
Description: MOSFET N-CH 30V 100A DFN5X6
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 14+ | 1.59 EUR |
| 20+ | 1.06 EUR |
| 100+ | 0.95 EUR |
| 500+ | 0.74 EUR |
| 1000+ | 0.61 EUR |
| 3000+ | 0.54 EUR |
| AMRA10N |
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Hersteller: Analog Power Inc.
Description: MOSFET N-CH 100V 62.7A DFN5X6
Packaging: Bulk
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.4A (Ta), 62.7A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 12A, 10V
Power Dissipation (Max): 2.5W (Ta), 64.8W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 6.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 6.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1248 pF @ 50 V
Description: MOSFET N-CH 100V 62.7A DFN5X6
Packaging: Bulk
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.4A (Ta), 62.7A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 12A, 10V
Power Dissipation (Max): 2.5W (Ta), 64.8W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 6.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 6.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1248 pF @ 50 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 7+ | 3.25 EUR |
| 10+ | 2.15 EUR |
| 100+ | 1.94 EUR |
| 500+ | 1.51 EUR |
| 1000+ | 1.24 EUR |
| 3000+ | 1.08 EUR |
| AMRA16N |
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Hersteller: Analog Power Inc.
Description: MOSFET N-CH 30V 100A DFN5X6
Description: MOSFET N-CH 30V 100A DFN5X6
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 14+ | 1.59 EUR |
| 20+ | 1.06 EUR |
| 100+ | 0.95 EUR |
| 500+ | 0.74 EUR |
| 1000+ | 0.61 EUR |
| 3000+ | 0.54 EUR |
| AMRE1L002SN |
Hersteller: Analog Power Inc.
Description: MOSFET N-CH 60V 0.32A SC89-3
Description: MOSFET N-CH 60V 0.32A SC89-3
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 28+ | 0.77 EUR |
| 46+ | 0.46 EUR |
| 100+ | 0.29 EUR |
| 500+ | 0.21 EUR |
| 1000+ | 0.19 EUR |
| 2000+ | 0.18 EUR |
| 4000+ | 0.12 EUR |
| AMRM01P |
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Hersteller: Analog Power Inc.
Description: MOSFET P-CH 500V 2.7A DFN5X6
Packaging: Bulk
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Description: MOSFET P-CH 500V 2.7A DFN5X6
Packaging: Bulk
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
auf Bestellung 1600 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 7+ | 3.25 EUR |
| 10+ | 2.15 EUR |
| 100+ | 1.94 EUR |
| 500+ | 1.51 EUR |
| 1000+ | 1.24 EUR |
| AMRM82N |
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Hersteller: Analog Power Inc.
Description: MOSFET N-CH 80V 100A DFN5X6
Description: MOSFET N-CH 80V 100A DFN5X6
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 18.37 EUR |
| 10+ | 12.19 EUR |
| 100+ | 8.68 EUR |
| 500+ | 8.2 EUR |
| 1000+ | 7.7 EUR |
| AMS424N |
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Hersteller: Analog Power Inc.
Description: MOSFET N-CH 40V 60A DFN3X3
Packaging: Bulk
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 60A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 16A, 10V
Power Dissipation (Max): 4.6W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-DFN (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3905 pF @ 15 V
Description: MOSFET N-CH 40V 60A DFN3X3
Packaging: Bulk
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 60A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 16A, 10V
Power Dissipation (Max): 4.6W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-DFN (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3905 pF @ 15 V
auf Bestellung 1150 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 9+ | 2.37 EUR |
| 14+ | 1.58 EUR |
| 100+ | 1.43 EUR |
| 500+ | 1.11 EUR |
| 1000+ | 0.92 EUR |
| AMS428N |
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Hersteller: Analog Power Inc.
Description: MOSFET N-CH 60V 50A DFN3X3
Packaging: Bulk
Package / Case: 8-PowerDFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A
Power Dissipation (Max): 83W
Supplier Device Package: 8-DFN (3x3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): 20V
Drain to Source Voltage (Vdss): 60 V
Description: MOSFET N-CH 60V 50A DFN3X3
Packaging: Bulk
Package / Case: 8-PowerDFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A
Power Dissipation (Max): 83W
Supplier Device Package: 8-DFN (3x3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): 20V
Drain to Source Voltage (Vdss): 60 V
auf Bestellung 580 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 17+ | 1.24 EUR |
| 26+ | 0.83 EUR |
| 100+ | 0.75 EUR |
| 500+ | 0.58 EUR |
| AMS431P |
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auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 10+ | 2.12 EUR |
| 15+ | 1.4 EUR |
| 100+ | 1.26 EUR |
| 800+ | 0.99 EUR |
| 1000+ | 0.81 EUR |
| AMS441P |
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Hersteller: Analog Power Inc.
Description: MOSFET P-CH -40V 50A DFN3X3
Packaging: Bulk
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 10A, 10V
Power Dissipation (Max): 4.6W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-DFN (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4147 pF @ 15 V
Description: MOSFET P-CH -40V 50A DFN3X3
Packaging: Bulk
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 10A, 10V
Power Dissipation (Max): 4.6W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-DFN (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4147 pF @ 15 V
auf Bestellung 100 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 8+ | 2.64 EUR |
| 12+ | 1.76 EUR |
| 100+ | 1.58 EUR |
| AMSi1012X |
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Hersteller: Analog Power Inc.
Description: MOSFET N-CH 60V 0.5A SC89-3
Description: MOSFET N-CH 60V 0.5A SC89-3
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 18+ | 1.21 EUR |
| 26+ | 0.81 EUR |
| 100+ | 0.73 EUR |
| 500+ | 0.56 EUR |
| 1000+ | 0.52 EUR |
| 2000+ | 0.46 EUR |
| 4000+ | 0.31 EUR |
| AMSi1062X |
Hersteller: Analog Power Inc.
Description: MOSFET N-CH 30V 0.172A SC89-3
Description: MOSFET N-CH 30V 0.172A SC89-3
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 23+ | 0.94 EUR |
| 37+ | 0.58 EUR |
| 100+ | 0.37 EUR |
| 500+ | 0.27 EUR |
| 1000+ | 0.24 EUR |
| 4000+ | 0.2 EUR |
| AMSM03P |
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auf Bestellung 2800 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 21+ | 1.02 EUR |
| 31+ | 0.69 EUR |
| 100+ | 0.62 EUR |
| 500+ | 0.48 EUR |
| 1000+ | 0.39 EUR |
| AMSM07P |
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auf Bestellung 2900 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 21+ | 1.02 EUR |
| 31+ | 0.69 EUR |
| 100+ | 0.62 EUR |
| 500+ | 0.48 EUR |
| 1000+ | 0.39 EUR |
| AMTK20A60W |
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Hersteller: Analog Power Inc.
Description: MOSFET P-CH 600V 20A TO-220CFM
Packaging: Bulk
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Description: MOSFET P-CH 600V 20A TO-220CFM
Packaging: Bulk
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 11.44 EUR |
| 50+ | 5.82 EUR |
| 100+ | 5.27 EUR |
| 500+ | 4.32 EUR |
| 1000+ | 4.01 EUR |
| 2000+ | 3.97 EUR |
| AMTP65H150G4LSGB |
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Hersteller: Analog Power Inc.
Description: GAN FET N-CH 650V 13A DFN8X8
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 6 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±18V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: 4-DFN (8x8)
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 52W (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-PowerTSFN
Packaging: Bulk
Description: GAN FET N-CH 650V 13A DFN8X8
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 6 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±18V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: 4-DFN (8x8)
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 52W (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-PowerTSFN
Packaging: Bulk
auf Bestellung 10 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 116.32 EUR |
| 10+ | 104.4 EUR |
| AMTP65H150G4PS |
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Hersteller: Analog Power Inc.
Description: GAN FET N-CH 650V TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 598 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 6 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Description: GAN FET N-CH 650V TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 598 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 6 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
| BSS126 |
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Hersteller: Analog Power Inc.
Description: MOSFET N-CH D-MODE 600V 0.112A S
Description: MOSFET N-CH D-MODE 600V 0.112A S
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 12+ | 1.84 EUR |
| 19+ | 1.13 EUR |
| 100+ | 0.73 EUR |
| 500+ | 0.55 EUR |
| 1000+ | 0.49 EUR |
| 3000+ | 0.4 EUR |
| BSS131 |
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Hersteller: Analog Power Inc.
Description: MOSFET N-CH 250V 0.401A SOT-23
Description: MOSFET N-CH 250V 0.401A SOT-23
auf Bestellung 1600 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 16+ | 1.38 EUR |
| 25+ | 0.84 EUR |
| 100+ | 0.52 EUR |
| 500+ | 0.39 EUR |
| 1000+ | 0.35 EUR |
| BSS138N |
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Hersteller: Analog Power Inc.
Description: DIODE SIL SIC 60V 0.6A SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 500mA, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 2.75V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 15 V
Description: DIODE SIL SIC 60V 0.6A SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 500mA, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 2.75V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 15 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.21 EUR |
| 6000+ | 0.19 EUR |
| BSS138N-CT |
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Hersteller: Analog Power Inc.
Description: MOSFET N-CH 60V 0.6A SOT-23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 600mA (Ta)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 500mA, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 15 V
Description: MOSFET N-CH 60V 0.6A SOT-23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 600mA (Ta)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 500mA, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 15 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 15+ | 1.44 EUR |
| 22+ | 0.99 EUR |
| 100+ | 0.49 EUR |
| 500+ | 0.4 EUR |
| 1000+ | 0.29 EUR |
| 3000+ | 0.21 EUR |
| BSS83 |
Hersteller: Analog Power Inc.
Description: MOSFET P-CH 60V 1.1A SOT-23
Description: MOSFET P-CH 60V 1.1A SOT-23
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 19+ | 1.15 EUR |
| 30+ | 0.7 EUR |
| 100+ | 0.44 EUR |
| 500+ | 0.32 EUR |
| 1000+ | 0.29 EUR |
| 3000+ | 0.24 EUR |
| BSS84 |
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Hersteller: Analog Power Inc.
Description: MOSFET P-CH 50V 0.3A SOT-23
Description: MOSFET P-CH 50V 0.3A SOT-23
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 11+ | 2.01 EUR |
| 18+ | 1.2 EUR |
| 100+ | 0.76 EUR |
| 500+ | 0.69 EUR |
| 1000+ | 0.62 EUR |
| 3000+ | 0.52 EUR |
| BSS8402DW |
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Hersteller: Analog Power Inc.
Description: MOSFET N-CH 60V 0.7A SC70-6
Description: MOSFET N-CH 60V 0.7A SC70-6
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 9+ | 2.39 EUR |
| 15+ | 1.48 EUR |
| 100+ | 0.94 EUR |
| 500+ | 0.71 EUR |
| 1000+ | 0.64 EUR |
| 3000+ | 0.54 EUR |
| BSS84AKS |
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Hersteller: Analog Power Inc.
Description: MOSFET P-CH 60V 0.4A SC70-6
Packaging: Bulk
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
Power Dissipation (Max): 300mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Supplier Device Package: SC-70-6
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Description: MOSFET P-CH 60V 0.4A SC70-6
Packaging: Bulk
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
Power Dissipation (Max): 300mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Supplier Device Package: SC-70-6
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 16+ | 1.34 EUR |
| 26+ | 0.81 EUR |
| 50+ | 0.58 EUR |
| 100+ | 0.51 EUR |
| 1000+ | 0.39 EUR |
| 3000+ | 0.27 EUR |
| BSS84AKW |
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auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 38+ | 0.57 EUR |
| 62+ | 0.35 EUR |
| 100+ | 0.21 EUR |
| 500+ | 0.15 EUR |
| 1000+ | 0.13 EUR |
| 3000+ | 0.11 EUR |























































