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Bezeichnung	Hersteller	Beschreibung	Verfügbarkeit	Preis
BC327-25 APM PBFREE	Central Semiconductor Corp	Description: 45V 500MA 625MW TH TRANSISTOR-SM Packaging: Tape & Box (TB) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V Frequency - Transition: 80MHz Supplier Device Package: TO-92-3 Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 625 mW	Produkt ist nicht verfügbar	Im Einkaufswagen Stück im Wert von UAH
BC327-25 TIN/LEAD	Central Semiconductor Corp	Description: 45V 500MA 625MW TH TRANSISTOR-SM Packaging: Box Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V Frequency - Transition: 80MHz Supplier Device Package: TO-92-3 Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 625 mW	Produkt ist nicht verfügbar	Im Einkaufswagen Stück im Wert von UAH
2N5822 APM PBFREE	Central Semiconductor Corp	Description: 60V 750MA 625MW TH TRANSISTOR-SM Packaging: Tape & Box (TB) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2mA, 2V Frequency - Transition: 120MHz Supplier Device Package: TO-92-3 Current - Collector (Ic) (Max): 750 mA Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 1.5 W	Produkt ist nicht verfügbar	Im Einkaufswagen Stück im Wert von UAH
2N5822 TRE PBFREE	Central Semiconductor Corp	Description: 60V 750MA 625MW TH TRANSISTOR-SM Packaging: Tape & Reel (TR) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2mA, 2V Frequency - Transition: 120MHz Supplier Device Package: TO-92-3 Current - Collector (Ic) (Max): 750 mA Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 1.5 W	Produkt ist nicht verfügbar	Im Einkaufswagen Stück im Wert von UAH
2N5822 TIN/LEAD	Central Semiconductor Corp	Description: 60V 750MA 625MW TH TRANSISTOR-SM Packaging: Box Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2mA, 2V Frequency - Transition: 120MHz Supplier Device Package: TO-92-3 Current - Collector (Ic) (Max): 750 mA Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 1.5 W	Produkt ist nicht verfügbar	Im Einkaufswagen Stück im Wert von UAH
2N5822 TRE TIN/LEAD	Central Semiconductor Corp	Description: 60V 750MA 625MW TH TRANSISTOR-SM Packaging: Tape & Reel (TR) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2mA, 2V Frequency - Transition: 120MHz Supplier Device Package: TO-92-3 Current - Collector (Ic) (Max): 750 mA Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 1.5 W	Produkt ist nicht verfügbar	Im Einkaufswagen Stück im Wert von UAH
2N5822 APM TIN/LEAD	Central Semiconductor Corp	Description: 60V 750MA 625MW TH TRANSISTOR-SM Packaging: Tape & Box (TB) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2mA, 2V Frequency - Transition: 120MHz Supplier Device Package: TO-92-3 Current - Collector (Ic) (Max): 750 mA Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 1.5 W	Produkt ist nicht verfügbar	Im Einkaufswagen Stück im Wert von UAH
1N5305 BK TIN/LEAD	Central Semiconductor Corp	Description: 100V 2MA TH DIODE-CURRENT LIMITI Packaging: Box Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 200°C (TJ) Applications: LED Driver Supplier Device Package: DO-35 Power - Max: 600mW Voltage - Anode - Cathode (Vak)(Max): 100V Regulator Current (Max): 2.3mA Voltage - Limiting (Max): 1.85V	Produkt ist nicht verfügbar	Im Einkaufswagen Stück im Wert von UAH
1N5305 BK PBFREE	Central Semiconductor Corp	Description: 100V 2MA TH DIODE-CURRENT LIMITI Packaging: Box Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 200°C (TJ) Applications: LED Driver Supplier Device Package: DO-35 Power - Max: 600mW Voltage - Anode - Cathode (Vak)(Max): 100V Regulator Current (Max): 2.3mA Voltage - Limiting (Max): 1.85V	Produkt ist nicht verfügbar	Im Einkaufswagen Stück im Wert von UAH
1N5402 BK PBFREE	Central Semiconductor Corp	Description: 3A 200V TH RECTIFIER-GENERAL PUR Packaging: Box Package / Case: DO-201AD, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: DO-201AD Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V	Produkt ist nicht verfügbar	Im Einkaufswagen Stück im Wert von UAH
P6KE33A TR PBFREE	Central Semiconductor Corp	Description: 600W 28.2V TH TRANSIENT VOLTAGE Packaging: Tape & Reel (TR) Package / Case: DO-204AC, DO-15, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -65°C ~ 175°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 13.2A Voltage - Reverse Standoff (Typ): 28.2V Supplier Device Package: DO-15 Unidirectional Channels: 1 Voltage - Breakdown (Min): 31.4V Voltage - Clamping (Max) @ Ipp: 45.7V Power - Peak Pulse: 600W Power Line Protection: No	Produkt ist nicht verfügbar	Im Einkaufswagen Stück im Wert von UAH
2N5486 TRE PBFREE	Central Semiconductor Corp	Description: 2V 6V 10MA 310MW TH JFET N CHANN Packaging: Tape & Reel (TR) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Operating Temperature: -65°C ~ 150°C (TJ) FET Type: N-Channel Input Capacitance (Ciss) (Max) @ Vds: 5pF @ 15V Voltage - Breakdown (V(BR)GSS): 25 V Current Drain (Id) - Max: 30 mA Supplier Device Package: TO-92-3 Drain to Source Voltage (Vdss): 25 V Power - Max: 310 mW Voltage - Cutoff (VGS off) @ Id: 6 V @ 10 nA Current - Drain (Idss) @ Vds (Vgs=0): 8 mA @ 15 V	Produkt ist nicht verfügbar	Im Einkaufswagen Stück im Wert von UAH
2N5486 APM PBFREE	Central Semiconductor Corp	Description: 2V 6V 10MA 310MW TH JFET N CHANN Packaging: Tape & Box (TB) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Operating Temperature: -65°C ~ 150°C (TJ) FET Type: N-Channel Input Capacitance (Ciss) (Max) @ Vds: 5pF @ 15V Voltage - Breakdown (V(BR)GSS): 25 V Current Drain (Id) - Max: 30 mA Supplier Device Package: TO-92-3 Drain to Source Voltage (Vdss): 25 V Power - Max: 310 mW Voltage - Cutoff (VGS off) @ Id: 6 V @ 10 nA Current - Drain (Idss) @ Vds (Vgs=0): 8 mA @ 15 V	Produkt ist nicht verfügbar	Im Einkaufswagen Stück im Wert von UAH
2N5486 TIN/LEAD	Central Semiconductor Corp	Description: 2V 6V 10MA 310MW TH JFET N CHANN Packaging: Box Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Operating Temperature: -65°C ~ 150°C (TJ) FET Type: N-Channel Input Capacitance (Ciss) (Max) @ Vds: 5pF @ 15V Voltage - Breakdown (V(BR)GSS): 25 V Current Drain (Id) - Max: 30 mA Supplier Device Package: TO-92-3 Drain to Source Voltage (Vdss): 25 V Power - Max: 310 mW Voltage - Cutoff (VGS off) @ Id: 6 V @ 10 nA Current - Drain (Idss) @ Vds (Vgs=0): 8 mA @ 15 V	Produkt ist nicht verfügbar	Im Einkaufswagen Stück im Wert von UAH
2N5486 APM TIN/LEAD	Central Semiconductor Corp	Description: 2V 6V 10MA 310MW TH JFET N CHANN Packaging: Tape & Box (TB) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Operating Temperature: -65°C ~ 150°C (TJ) FET Type: N-Channel Input Capacitance (Ciss) (Max) @ Vds: 5pF @ 15V Voltage - Breakdown (V(BR)GSS): 25 V Current Drain (Id) - Max: 30 mA Supplier Device Package: TO-92-3 Drain to Source Voltage (Vdss): 25 V Power - Max: 310 mW Voltage - Cutoff (VGS off) @ Id: 6 V @ 10 nA Current - Drain (Idss) @ Vds (Vgs=0): 8 mA @ 15 V	Produkt ist nicht verfügbar	Im Einkaufswagen Stück im Wert von UAH
2N5486 TRE TIN/LEAD	Central Semiconductor Corp	Description: 2V 6V 10MA 310MW TH JFET N CHANN Packaging: Tape & Reel (TR) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Operating Temperature: -65°C ~ 150°C (TJ) FET Type: N-Channel Input Capacitance (Ciss) (Max) @ Vds: 5pF @ 15V Voltage - Breakdown (V(BR)GSS): 25 V Current Drain (Id) - Max: 30 mA Supplier Device Package: TO-92-3 Drain to Source Voltage (Vdss): 25 V Power - Max: 310 mW Voltage - Cutoff (VGS off) @ Id: 6 V @ 10 nA Current - Drain (Idss) @ Vds (Vgs=0): 8 mA @ 15 V	Produkt ist nicht verfügbar	Im Einkaufswagen Stück im Wert von UAH
2N2328 PBFREE	Central Semiconductor Corp	Description: 1.6A 300V TH SCR Packaging: Box Package / Case: TO-205AD, TO-39-3 Metal Can Mounting Type: Through Hole SCR Type: Standard Recovery Operating Temperature: -65°C ~ 125°C (TJ) Current - Hold (Ih) (Max): 2 mA Current - Gate Trigger (Igt) (Max): 200 µA Current - Non Rep. Surge 50, 60Hz (Itsm): 15A @ 60Hz Current - On State (It (AV)) (Max): 1 A Voltage - Gate Trigger (Vgt) (Max): 800 mV Voltage - On State (Vtm) (Max): 1.5 V Current - Off State (Max): 5 µA Supplier Device Package: TO-39 Current - On State (It (RMS)) (Max): 1.6 A Voltage - Off State: 300 V	Produkt ist nicht verfügbar	Im Einkaufswagen Stück im Wert von UAH
1N4735A BK TIN/LEAD	Central Semiconductor Corp	Description: TH DIODE-ZENER SINGLE: STANDARD Tolerance: ±5% Packaging: Box Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 200°C (TJ) Voltage - Zener (Nom) (Vz): 6.2 V Impedance (Max) (Zzt): 2 Ohms Supplier Device Package: DO-41 Power - Max: 1 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 10 µA @ 3 V	Produkt ist nicht verfügbar	Im Einkaufswagen Stück im Wert von UAH
1N60 BK	Central Semiconductor Corp	Description: DIODE SCHOTTKY 100V 100MA DO7 Packaging: Bulk Package / Case: DO-204AA, DO-7, Axial Mounting Type: Through Hole Speed: Small Signal =< 200mA (Io), Any Speed Technology: Schottky Capacitance @ Vr, F: 1.2pF @ 10V, 1MHz Current - Average Rectified (Io): 100mA Supplier Device Package: DO-7 Operating Temperature - Junction: -65°C ~ 125°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 100 mA Current - Reverse Leakage @ Vr: 100 nA @ 50 V	Produkt ist nicht verfügbar	Im Einkaufswagen Stück im Wert von UAH
C4SMAFL14A TR13 PBFREE	Central Semiconductor Corp	Description: 400W 14V SMD TRANSIENT VOLTAGE S Packaging: Tape & Reel (TR) Package / Case: DO-221AC, SMA Flat Leads Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 17.2A Voltage - Reverse Standoff (Typ): 14V Supplier Device Package: SMAflat Unidirectional Channels: 1 Voltage - Breakdown (Min): 15.6V Voltage - Clamping (Max) @ Ipp: 23.2V Power - Peak Pulse: 400W Power Line Protection: No	Produkt ist nicht verfügbar	Im Einkaufswagen Stück im Wert von UAH
P6SMB8.2A TR13 PBFREE	Central Semiconductor Corp	Description: 600W 7.02V SMD TRANSIENT VOLTAGE Packaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 50A Voltage - Reverse Standoff (Typ): 7.02V Supplier Device Package: SMB Unidirectional Channels: 1 Voltage - Breakdown (Min): 7.79V Voltage - Clamping (Max) @ Ipp: 12.1V Power - Peak Pulse: 600W Power Line Protection: No	Produkt ist nicht verfügbar	Im Einkaufswagen Stück im Wert von UAH
2N6027 TRB PBFREE	Central Semiconductor Corp	Description: 40V 150MA TH PROGRAMMABLE UJT Packaging: Tape & Reel (TR) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Voltage - Output: 6V Voltage: 40V Current - Peak: 2 µA Voltage - Offset (Vt): 1.6 V Current - Valley (Iv): 50 µA Current - Gate to Anode Leakage (Igao): 10 nA Power Dissipation (Max): 300 mW	Produkt ist nicht verfügbar	Im Einkaufswagen Stück im Wert von UAH
2N6027 APM TIN/LEAD	Central Semiconductor Corp	Description: 40V 150MA TH PROGRAMMABLE UJT Packaging: Tape & Box (TB) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Voltage - Output: 6V Voltage: 40V Current - Peak: 2 µA Voltage - Offset (Vt): 1.6 V Current - Valley (Iv): 50 µA Current - Gate to Anode Leakage (Igao): 10 nA Power Dissipation (Max): 300 mW	Produkt ist nicht verfügbar	Im Einkaufswagen Stück im Wert von UAH
2N6027 TRB TIN/LEAD	Central Semiconductor Corp	Description: 40V 150MA TH PROGRAMMABLE UJT Packaging: Tape & Reel (TR) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Voltage - Output: 6V Voltage: 40V Current - Peak: 2 µA Voltage - Offset (Vt): 1.6 V Current - Valley (Iv): 50 µA Current - Gate to Anode Leakage (Igao): 10 nA Power Dissipation (Max): 300 mW	Produkt ist nicht verfügbar	Im Einkaufswagen Stück im Wert von UAH
2N6027 TRE TIN/LEAD	Central Semiconductor Corp	Description: 40V 150MA TH PROGRAMMABLE UJT Packaging: Tape & Reel (TR) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Voltage - Output: 6V Voltage: 40V Current - Peak: 2 µA Voltage - Offset (Vt): 1.6 V Current - Valley (Iv): 50 µA Current - Gate to Anode Leakage (Igao): 10 nA Power Dissipation (Max): 300 mW	Produkt ist nicht verfügbar	Im Einkaufswagen Stück im Wert von UAH
2N6027 TIN/LEAD	Central Semiconductor Corp	Description: 40V 150MA TH PROGRAMMABLE UJT Packaging: Box Package / Case: TO-226-3, TO-92-3 (TO-226AA) Voltage - Output: 6V Voltage: 40V Current - Peak: 2 µA Voltage - Offset (Vt): 1.6 V Current - Valley (Iv): 50 µA Current - Gate to Anode Leakage (Igao): 10 nA Power Dissipation (Max): 300 mW	Produkt ist nicht verfügbar	Im Einkaufswagen Stück im Wert von UAH
2N6027 APP TIN/LEAD	Central Semiconductor Corp	Description: 40V 150MA TH PROGRAMMABLE UJT Packaging: Tape & Box (TB) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Voltage - Output: 6V Voltage: 40V Current - Peak: 2 µA Voltage - Offset (Vt): 1.6 V Current - Valley (Iv): 50 µA Current - Gate to Anode Leakage (Igao): 10 nA Power Dissipation (Max): 300 mW	Produkt ist nicht verfügbar	Im Einkaufswagen Stück im Wert von UAH
2N6027 APM PBFREE	Central Semiconductor Corp	Description: 40V 150MA TH PROGRAMMABLE UJT Packaging: Tape & Box (TB) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Voltage - Output: 6V Voltage: 40V Current - Peak: 2 µA Voltage - Offset (Vt): 1.6 V Current - Valley (Iv): 50 µA Current - Gate to Anode Leakage (Igao): 10 nA Power Dissipation (Max): 300 mW	Produkt ist nicht verfügbar	Im Einkaufswagen Stück im Wert von UAH
2N6027 APP PBFREE	Central Semiconductor Corp	Description: 40V 150MA TH PROGRAMMABLE UJT Packaging: Tape & Box (TB) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Voltage - Output: 6V Voltage: 40V Current - Peak: 2 µA Voltage - Offset (Vt): 1.6 V Current - Valley (Iv): 50 µA Current - Gate to Anode Leakage (Igao): 10 nA Power Dissipation (Max): 300 mW	Produkt ist nicht verfügbar	Im Einkaufswagen Stück im Wert von UAH
2N6027 TRE PBFREE	Central Semiconductor Corp	Description: 40V 150MA TH PROGRAMMABLE UJT Packaging: Tape & Reel (TR) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Voltage - Output: 6V Voltage: 40V Current - Peak: 2 µA Voltage - Offset (Vt): 1.6 V Current - Valley (Iv): 50 µA Current - Gate to Anode Leakage (Igao): 10 nA Power Dissipation (Max): 300 mW	Produkt ist nicht verfügbar	Im Einkaufswagen Stück im Wert von UAH
2N6027 TRA PBFREE	Central Semiconductor Corp	Description: 40V 150MA TH PROGRAMMABLE UJT Packaging: Tape & Reel (TR) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Voltage - Output: 6V Voltage: 40V Current - Peak: 2 µA Voltage - Offset (Vt): 1.6 V Current - Valley (Iv): 50 µA Current - Gate to Anode Leakage (Igao): 10 nA Power Dissipation (Max): 300 mW	Produkt ist nicht verfügbar	Im Einkaufswagen Stück im Wert von UAH
2N6027 TRA TIN/LEAD	Central Semiconductor Corp	Description: 40V 150MA TH PROGRAMMABLE UJT Packaging: Tape & Reel (TR) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Voltage - Output: 6V Voltage: 40V Current - Peak: 2 µA Voltage - Offset (Vt): 1.6 V Current - Valley (Iv): 50 µA Current - Gate to Anode Leakage (Igao): 10 nA Power Dissipation (Max): 300 mW	Produkt ist nicht verfügbar	Im Einkaufswagen Stück im Wert von UAH
2N5172 APM PBFREE	Central Semiconductor Corp	Description: 25V 100MA 625MW TH TRANSISTOR-SM Packaging: Tape & Box (TB) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 10V Frequency - Transition: 200MHz Supplier Device Package: TO-92-3 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 25 V Power - Max: 625 mW	Produkt ist nicht verfügbar	Im Einkaufswagen Stück im Wert von UAH
2N5172 TRE PBFREE	Central Semiconductor Corp	Description: 25V 100MA 625MW TH TRANSISTOR-SM Packaging: Tape & Reel (TR) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 10V Frequency - Transition: 200MHz Supplier Device Package: TO-92-3 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 25 V Power - Max: 625 mW	Produkt ist nicht verfügbar	Im Einkaufswagen Stück im Wert von UAH
2N5172 TIN/LEAD	Central Semiconductor Corp	Description: 25V 100MA 625MW TH TRANSISTOR-SM Packaging: Box Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 10V Frequency - Transition: 200MHz Supplier Device Package: TO-92-3 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 25 V Power - Max: 625 mW	Produkt ist nicht verfügbar	Im Einkaufswagen Stück im Wert von UAH
2N5172 APM TIN/LEAD	Central Semiconductor Corp	Description: 25V 100MA 625MW TH TRANSISTOR-SM Packaging: Tape & Box (TB) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 10V Frequency - Transition: 200MHz Supplier Device Package: TO-92-3 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 25 V Power - Max: 625 mW	Produkt ist nicht verfügbar	Im Einkaufswagen Stück im Wert von UAH
2N5172 TRE TIN/LEAD	Central Semiconductor Corp	Description: 25V 100MA 625MW TH TRANSISTOR-SM Packaging: Tape & Reel (TR) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 10V Frequency - Transition: 200MHz Supplier Device Package: TO-92-3 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 25 V Power - Max: 625 mW	Produkt ist nicht verfügbar	Im Einkaufswagen Stück im Wert von UAH
MPSA93 PBFREE	Central Semiconductor Corp	Description: TH TRANSISTOR-SMALL SIGNAL (<=1A Packaging: Box Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 2mA, 20mA Current - Collector Cutoff (Max): 250nA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 10V Frequency - Transition: 50MHz Supplier Device Package: TO-92-3 Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 200 V Power - Max: 625 mW	Produkt ist nicht verfügbar	Im Einkaufswagen Stück im Wert von UAH
MPSA93 TIN/LEAD	Central Semiconductor Corp	Description: TH TRANSISTOR-SMALL SIGNAL (<=1A Packaging: Box Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 2mA, 20mA Current - Collector Cutoff (Max): 250nA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 10V Frequency - Transition: 50MHz Supplier Device Package: TO-92-3 Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 200 V Power - Max: 625 mW	Produkt ist nicht verfügbar	Im Einkaufswagen Stück im Wert von UAH
1N4749A BK PBFREE	Central Semiconductor Corp	Description: 24V 1W TH DIODE-ZENER SINGLE: ST Tolerance: ±5% Packaging: Box Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 200°C (TJ) Voltage - Zener (Nom) (Vz): 24 V Impedance (Max) (Zzt): 25 Ohms Supplier Device Package: DO-41 Power - Max: 1 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 5 µA @ 18.2 V	Produkt ist nicht verfügbar	Im Einkaufswagen Stück im Wert von UAH
1N4749A TR TIN/LEAD	Central Semiconductor Corp	Description: 24V 1W TH DIODE-ZENER SINGLE: ST Tolerance: ±5% Packaging: Tape & Reel (TR) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 200°C (TJ) Voltage - Zener (Nom) (Vz): 24 V Impedance (Max) (Zzt): 25 Ohms Supplier Device Package: DO-41 Power - Max: 1 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 5 µA @ 18.2 V	Produkt ist nicht verfügbar	Im Einkaufswagen Stück im Wert von UAH
2N4393 TIN/LEAD	Central Semiconductor Corp	Description: .5V 3V 50MA 1.8W TH JFET N CHANN Packaging: Box Package / Case: TO-206AA, TO-18-3 Metal Can Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C (TJ) FET Type: N-Channel Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 20V Voltage - Breakdown (V(BR)GSS): 40 V Supplier Device Package: TO-18 Power - Max: 1.8 W Resistance - RDS(On): 100 Ohms Voltage - Cutoff (VGS off) @ Id: 500 mV @ 1 nA Current - Drain (Idss) @ Vds (Vgs=0): 5 mA @ 20 V	Produkt ist nicht verfügbar	Im Einkaufswagen Stück im Wert von UAH
BC309B PBFREE	Central Semiconductor Corp	Description: TH TRANSISTOR-SMALL SIGNAL (<=1A Packaging: Box Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 10mA Current - Collector Cutoff (Max): 15nA DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 5V Frequency - Transition: 130MHz Supplier Device Package: TO-92-3 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 25 V Power - Max: 500 mW	Produkt ist nicht verfügbar	Im Einkaufswagen Stück im Wert von UAH
BC309B TIN/LEAD	Central Semiconductor Corp	Description: TH TRANSISTOR-SMALL SIGNAL (<=1A Packaging: Box Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 10mA Current - Collector Cutoff (Max): 15nA DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 5V Frequency - Transition: 130MHz Supplier Device Package: TO-92-3 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 25 V Power - Max: 500 mW	Produkt ist nicht verfügbar	Im Einkaufswagen Stück im Wert von UAH
BDV65B	Central Semiconductor Corp	Description: TRANS NPN 100V 12A TO-218 Packaging: Bulk Package / Case: TO-218-3 Mounting Type: Through Hole Transistor Type: NPN DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 5A, 4V Frequency - Transition: 60MHz Supplier Device Package: TO-218 Current - Collector (Ic) (Max): 12 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 125 W	Produkt ist nicht verfügbar	Im Einkaufswagen Stück im Wert von UAH
MPSA42 APM PBFREE	Central Semiconductor Corp	Description: 300V 500MA 625MW TH TRANSISTOR-S Packaging: Tape & Box (TB) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 30mA, 10V Frequency - Transition: 50MHz Supplier Device Package: TO-92-3 Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 300 V Power - Max: 625 mW	Produkt ist nicht verfügbar	Im Einkaufswagen Stück im Wert von UAH
MPSA42 TRE PBFREE	Central Semiconductor Corp	Description: 300V 500MA 625MW TH TRANSISTOR-S Packaging: Tape & Reel (TR) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 30mA, 10V Frequency - Transition: 50MHz Supplier Device Package: TO-92-3 Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 300 V Power - Max: 625 mW	Produkt ist nicht verfügbar	Im Einkaufswagen Stück im Wert von UAH
MPSA42 PBFREE	Central Semiconductor Corp	Description: 300V 500MA 625MW TH TRANSISTOR-S Packaging: Box Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 30mA, 10V Frequency - Transition: 50MHz Supplier Device Package: TO-92-3 Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 300 V Power - Max: 625 mW	Produkt ist nicht verfügbar	Im Einkaufswagen Stück im Wert von UAH
MPSA42 APM TIN/LEAD	Central Semiconductor Corp	Description: 300V 500MA 625MW TH TRANSISTOR-S Packaging: Tape & Box (TB) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 30mA, 10V Frequency - Transition: 50MHz Supplier Device Package: TO-92-3 Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 300 V Power - Max: 625 mW	Produkt ist nicht verfügbar	Im Einkaufswagen Stück im Wert von UAH
MPSA42 TRE TIN/LEAD	Central Semiconductor Corp	Description: 300V 500MA 625MW TH TRANSISTOR-S Packaging: Tape & Reel (TR) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 30mA, 10V Frequency - Transition: 50MHz Supplier Device Package: TO-92-3 Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 300 V Power - Max: 625 mW	Produkt ist nicht verfügbar	Im Einkaufswagen Stück im Wert von UAH
BC327-25 TRE TIN/LEAD	Central Semiconductor Corp	Description: 45V 500MA 625MW TH TRANSISTOR-SM Packaging: Tape & Reel (TR) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V Frequency - Transition: 80MHz Supplier Device Package: TO-92-3 Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 625 mW	Produkt ist nicht verfügbar	Im Einkaufswagen Stück im Wert von UAH
CMPZDA43V TR TIN/LEAD	Central Semiconductor Corp	Description: 43V 350MW SMD DIODE-ZENER DUAL: Tolerance: ±6.98% Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Configuration: 1 Pair Common Anode Operating Temperature: -65°C ~ 175°C (TJ) Voltage - Zener (Nom) (Vz): 43 V Impedance (Max) (Zzt): 150 Ohms Supplier Device Package: SOT-23 Power - Max: 350 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 50 nA @ 30.1 V	Produkt ist nicht verfügbar	Im Einkaufswagen Stück im Wert von UAH
CMPZDA43V TR PBFREE	Central Semiconductor Corp	Description: 43V 350MW SMD DIODE-ZENER DUAL: Tolerance: ±6.98% Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Configuration: 1 Pair Common Anode Operating Temperature: -65°C ~ 175°C (TJ) Voltage - Zener (Nom) (Vz): 43 V Impedance (Max) (Zzt): 150 Ohms Supplier Device Package: SOT-23 Power - Max: 350 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 50 nA @ 30.1 V	Produkt ist nicht verfügbar	Im Einkaufswagen Stück im Wert von UAH
1N4751A BK TIN/LEAD	Central Semiconductor Corp	Description: 30V 1W TH DIODE-ZENER SINGLE: ST Tolerance: ±5% Packaging: Box Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 30 V Impedance (Max) (Zzt): 40 Ohms Supplier Device Package: DO-41 Power - Max: 1 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 5 µA @ 22.8 V	Produkt ist nicht verfügbar	Im Einkaufswagen Stück im Wert von UAH
TIP120	Central Semiconductor Corp	Description: TRANS NPN DARL 60V TO-220-3 Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Transistor Type: NPN - Darlington Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 4V @ 20mA, 5A Current - Collector Cutoff (Max): 500µA DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 3A, 3V Frequency - Transition: 4MHz Supplier Device Package: TO-220-3 Voltage - Collector Emitter Breakdown (Max): 60 V	Produkt ist nicht verfügbar	Im Einkaufswagen Stück im Wert von UAH
2N3905 TIN/LEAD	Central Semiconductor Corp	Description: 40V 200MA 625MW TH TRANSISTOR-SM Packaging: Box Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -65°C ~ 150°C (TJ) Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 1V Frequency - Transition: 200MHz Supplier Device Package: TO-92-3 Current - Collector (Ic) (Max): 200 mA Voltage - Collector Emitter Breakdown (Max): 40 V	Produkt ist nicht verfügbar	Im Einkaufswagen Stück im Wert von UAH
2N3905 TRE PBFREE	Central Semiconductor Corp	Description: 40V 200MA 625MW TH TRANSISTOR-SM Packaging: Tape & Reel (TR) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 1V Frequency - Transition: 200MHz Supplier Device Package: TO-92-3 Current - Collector (Ic) (Max): 200 mA Voltage - Collector Emitter Breakdown (Max): 40 V	Produkt ist nicht verfügbar	Im Einkaufswagen Stück im Wert von UAH
2N3905 APM PBFREE	Central Semiconductor Corp	Description: 40V 200MA 625MW TH TRANSISTOR-SM Packaging: Tape & Box (TB) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 1V Frequency - Transition: 200MHz Supplier Device Package: TO-92-3 Current - Collector (Ic) (Max): 200 mA Voltage - Collector Emitter Breakdown (Max): 40 V	Produkt ist nicht verfügbar	Im Einkaufswagen Stück im Wert von UAH
2N3905 TRE TIN/LEAD	Central Semiconductor Corp	Description: 40V 200MA 625MW TH TRANSISTOR-SM Packaging: Tape & Reel (TR) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -65°C ~ 150°C (TJ) Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 1V Frequency - Transition: 200MHz Supplier Device Package: TO-92-3 Current - Collector (Ic) (Max): 200 mA Voltage - Collector Emitter Breakdown (Max): 40 V	Produkt ist nicht verfügbar	Im Einkaufswagen Stück im Wert von UAH
2N3905 APM TIN/LEAD	Central Semiconductor Corp	Description: 40V 200MA 625MW TH TRANSISTOR-SM Packaging: Tape & Box (TB) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -65°C ~ 150°C (TJ) Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 1V Frequency - Transition: 200MHz Supplier Device Package: TO-92-3 Current - Collector (Ic) (Max): 200 mA Voltage - Collector Emitter Breakdown (Max): 40 V	Produkt ist nicht verfügbar	Im Einkaufswagen Stück im Wert von UAH

BC327-25 APM PBFREE

Hersteller: Central Semiconductor Corp
Description: 45V 500MA 625MW TH TRANSISTOR-SM
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
Frequency - Transition: 80MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 625 mW

Produkt ist nicht verfügbar