Produkte > DIODES INCORPORATED > Alle Produkte des Herstellers DIODES INCORPORATED (73248) > Seite 129 nach 1221
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||
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ZVN4210GTC | Diodes Incorporated |
 Description: MOSFET N-CH 100V 800MA SOT223Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 800mA (Ta) Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.5A, 10V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 2.4V @ 1mA Supplier Device Package: SOT-223-3 Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 25 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 4000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||
,TO-226_straightlead.jpg "ZVN4306ASTOA") |
ZVN4306ASTOA | Diodes Incorporated |
Description: MOSFET N-CH 60V 1.1A E-LINE |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||
,TO-226_straightlead.jpg "ZVN4306ASTOB") |
ZVN4306ASTOB | Diodes Incorporated |
Description: MOSFET N-CH 60V 1.1A E-LINE Packaging: Tape & Reel (TR) Package / Case: E-Line-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta) Rds On (Max) @ Id, Vgs: 330mOhm @ 3A, 10V Power Dissipation (Max): 850mW (Ta) Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: E-Line (TO-92 compatible) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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ZVN4306ASTZ | Diodes Incorporated |
Description: MOSFET N-CH 60V 1.1A E-LINE Packaging: Tape & Box (TB) Package / Case: E-Line-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta) Rds On (Max) @ Id, Vgs: 330mOhm @ 3A, 10V Power Dissipation (Max): 850mW (Ta) Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: E-Line (TO-92 compatible) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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ZVN4306AVSTOA | Diodes Incorporated |
Description: MOSFET N-CH 60V 1.1A E-LINE Packaging: Tape & Reel (TR) Package / Case: E-Line-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta) Rds On (Max) @ Id, Vgs: 330mOhm @ 3A, 10V Power Dissipation (Max): 850mW (Ta) Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: E-Line (TO-92 compatible) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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ZVN4306AVSTOB | Diodes Incorporated |
Description: MOSFET N-CH 60V 1.1A E-LINE |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||
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ZVN4306AVSTZ | Diodes Incorporated |
Description: MOSFET N-CH 60V 1.1A E-LINE Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Supplier Device Package: E-Line (TO-92 compatible) Vgs(th) (Max) @ Id: 3V @ 1mA Power Dissipation (Max): 850mW (Ta) Rds On (Max) @ Id, Vgs: 330mOhm @ 3A, 10V Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: E-Line-3 Packaging: Tape & Box (TB) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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ZVN4306GTC | Diodes Incorporated |
Description: MOSFET N-CH 60V 2.1A SOT223 Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Supplier Device Package: SOT-223-3 Vgs(th) (Max) @ Id: 3V @ 1mA Power Dissipation (Max): 3W (Ta) Rds On (Max) @ Id, Vgs: 330mOhm @ 3A, 10V Current - Continuous Drain (Id) @ 25°C: 2.1A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V Drain to Source Voltage (Vdss): 60 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 4000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||
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ZVN4306GVTC | Diodes Incorporated |
Description: MOSFET N-CH 60V 2.1A SOT223 Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Supplier Device Package: SOT-223-3 Vgs(th) (Max) @ Id: 3V @ 1mA Power Dissipation (Max): 3W (Ta) Rds On (Max) @ Id, Vgs: 330mOhm @ 3A, 10V Current - Continuous Drain (Id) @ 25°C: 2.1A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 4000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||
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ZVN4310ASTOB | Diodes Incorporated |
Description: MOSFET N-CH 100V 900MA E-LINE Packaging: Tape & Reel (TR) Package / Case: E-Line-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 900mA (Ta) Rds On (Max) @ Id, Vgs: 500mOhm @ 3A, 10V Power Dissipation (Max): 850mW (Ta) Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: E-Line (TO-92 compatible) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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ZVN4310ASTZ | Diodes Incorporated |
Description: MOSFET N-CH 100V 900MA E-LINE Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Supplier Device Package: E-Line (TO-92 compatible) Vgs(th) (Max) @ Id: 3V @ 1mA Power Dissipation (Max): 850mW (Ta) Rds On (Max) @ Id, Vgs: 500mOhm @ 3A, 10V Current - Continuous Drain (Id) @ 25°C: 900mA (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: E-Line-3 Packaging: Tape & Box (TB) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 12000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||
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ZVN4310GTC | Diodes Incorporated |
Description: MOSFET N-CH 100V 1.67A SOT223 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 4000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||
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ZVN4424ASTOA | Diodes Incorporated |
Description: MOSFET N-CH 240V 260MA E-LINE Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 25 V Drain to Source Voltage (Vdss): 240 V Vgs (Max): ±40V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Part Status: Obsolete Supplier Device Package: E-Line (TO-92 compatible) Vgs(th) (Max) @ Id: 1.8V @ 1mA Power Dissipation (Max): 750mW (Ta) Rds On (Max) @ Id, Vgs: 5.5Ohm @ 500mA, 10V Current - Continuous Drain (Id) @ 25°C: 260mA (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: E-Line-3 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||
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ZVN4424ASTOB | Diodes Incorporated |
Description: MOSFET N-CH 240V 260MA E-LINE Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 25 V Drain to Source Voltage (Vdss): 240 V Vgs (Max): ±40V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Part Status: Obsolete Supplier Device Package: E-Line (TO-92 compatible) Vgs(th) (Max) @ Id: 1.8V @ 1mA Power Dissipation (Max): 750mW (Ta) Rds On (Max) @ Id, Vgs: 5.5Ohm @ 500mA, 10V Current - Continuous Drain (Id) @ 25°C: 260mA (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: E-Line-3 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||
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ZVN4424GTC | Diodes Incorporated |
Description: MOSFET N-CH 240V 500MA SOT223 Drain to Source Voltage (Vdss): 240 V Vgs (Max): ±40V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Part Status: Obsolete Supplier Device Package: SOT-223-3 Vgs(th) (Max) @ Id: 1.8V @ 1mA Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 5.5Ohm @ 500mA, 10V Current - Continuous Drain (Id) @ 25°C: 500mA (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 25 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 4000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||
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ZVN4525E6TC | Diodes Incorporated |
Description: MOSFET N-CH 250V 230MA SOT23-6 Input Capacitance (Ciss) (Max) @ Vds: 72 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 3.65 nC @ 10 V Drain to Source Voltage (Vdss): 250 V Vgs (Max): ±40V Drive Voltage (Max Rds On, Min Rds On): 2.4V, 10V Part Status: Obsolete Supplier Device Package: SOT-23-6 Vgs(th) (Max) @ Id: 1.8V @ 1mA Power Dissipation (Max): 1.1W (Ta) Rds On (Max) @ Id, Vgs: 8.5Ohm @ 500mA, 10V Current - Continuous Drain (Id) @ 25°C: 230mA (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||
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ZVN4525GTC | Diodes Incorporated |
Description: MOSFET N-CH 250V 310MA SOT223 Input Capacitance (Ciss) (Max) @ Vds: 72 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 3.65 nC @ 10 V Drain to Source Voltage (Vdss): 250 V Vgs (Max): ±40V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Part Status: Obsolete Supplier Device Package: SOT-223-3 Vgs(th) (Max) @ Id: 1.8V @ 1mA Power Dissipation (Max): 2W (Ta) Rds On (Max) @ Id, Vgs: 8.5Ohm @ 500mA, 10V Current - Continuous Drain (Id) @ 25°C: 310mA (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 4000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||
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ZVNL110ASTOA | Diodes Incorporated |
Description: MOSFET N-CH 100V 320MA E-LINE Input Capacitance (Ciss) (Max) @ Vds: 75 pF @ 25 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Supplier Device Package: E-Line (TO-92 compatible) Vgs(th) (Max) @ Id: 1.5V @ 1mA Power Dissipation (Max): 700mW (Ta) Rds On (Max) @ Id, Vgs: 3Ohm @ 500mA, 10V Current - Continuous Drain (Id) @ 25°C: 320mA (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: E-Line-3 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 16000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||
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ZVNL110ASTOB | Diodes Incorporated |
Description: MOSFET N-CH 100V 320MA E-LINE |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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ZVNL110ASTZ | Diodes Incorporated |
Description: MOSFET N-CH 100V 320MA E-LINE Packaging: Tape & Box (TB) Package / Case: E-Line-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 320mA (Ta) Rds On (Max) @ Id, Vgs: 3Ohm @ 500mA, 10V Power Dissipation (Max): 700mW (Ta) Vgs(th) (Max) @ Id: 1.5V @ 1mA Supplier Device Package: E-Line (TO-92 compatible) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Input Capacitance (Ciss) (Max) @ Vds: 75 pF @ 25 V |
auf Bestellung 12000 Stücke: Lieferzeit 10-14 Tag (e) |
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ZVNL110GTC | Diodes Incorporated |
Description: MOSFET N-CH 100V 600MA SOT223 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 4000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||
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ZVNL120ASTOA | Diodes Incorporated |
Description: MOSFET N-CH 200V 180MA E-LINE Input Capacitance (Ciss) (Max) @ Vds: 85 pF @ 25 V Drain to Source Voltage (Vdss): 200 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 3V, 5V Part Status: Obsolete Supplier Device Package: E-Line (TO-92 compatible) Vgs(th) (Max) @ Id: 1.5V @ 1mA Power Dissipation (Max): 700mW (Ta) Rds On (Max) @ Id, Vgs: 10Ohm @ 250mA, 10V Current - Continuous Drain (Id) @ 25°C: 180mA (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: E-Line-3 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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ZVNL120ASTOB | Diodes Incorporated |
Description: MOSFET N-CH 200V 180MA E-LINE Input Capacitance (Ciss) (Max) @ Vds: 85 pF @ 25 V Drain to Source Voltage (Vdss): 200 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 3V, 5V Part Status: Obsolete Supplier Device Package: E-Line (TO-92 compatible) Vgs(th) (Max) @ Id: 1.5V @ 1mA Power Dissipation (Max): 700mW (Ta) Rds On (Max) @ Id, Vgs: 10Ohm @ 250mA, 10V Current - Continuous Drain (Id) @ 25°C: 180mA (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: E-Line-3 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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ZVNL120C | Diodes Incorporated |
Description: MOSFET N-CH 200V 180MA TO92-3 Packaging: Bulk Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 180mA (Ta) Rds On (Max) @ Id, Vgs: 10Ohm @ 250mA, 5V Power Dissipation (Max): 700mW (Ta) Vgs(th) (Max) @ Id: 1.5V @ 1mA Supplier Device Package: TO-92 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 3V, 5V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Input Capacitance (Ciss) (Max) @ Vds: 85 pF @ 25 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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ZVNL120CSTOA | Diodes Incorporated |
Description: MOSFET N-CH 200V 180MA E-LINE Packaging: Tape & Reel (TR) Package / Case: E-Line-3 Mounting Type: Through Hole Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 180mA (Ta) Rds On (Max) @ Id, Vgs: 10Ohm @ 250mA, 5V Power Dissipation (Max): 700mW (Ta) Vgs(th) (Max) @ Id: 1.5V @ 1mA Supplier Device Package: E-Line (TO-92 compatible) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 3V, 5V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Input Capacitance (Ciss) (Max) @ Vds: 85 pF @ 25 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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ZVNL120CSTOB | Diodes Incorporated |
Description: MOSFET N-CH 200V 180MA E-LINE Packaging: Tape & Reel (TR) Package / Case: E-Line-3 Mounting Type: Through Hole Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 180mA (Ta) Rds On (Max) @ Id, Vgs: 10Ohm @ 250mA, 5V Power Dissipation (Max): 700mW (Ta) Vgs(th) (Max) @ Id: 1.5V @ 1mA Supplier Device Package: E-Line (TO-92 compatible) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 3V, 5V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Input Capacitance (Ciss) (Max) @ Vds: 85 pF @ 25 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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ZVNL120CSTZ | Diodes Incorporated |
Description: MOSFET N-CH 200V 180MA E-LINE Packaging: Tape & Box (TB) Package / Case: E-Line-3 Mounting Type: Through Hole Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 180mA (Ta) Rds On (Max) @ Id, Vgs: 10Ohm @ 250mA, 5V Power Dissipation (Max): 700mW (Ta) Vgs(th) (Max) @ Id: 1.5V @ 1mA Supplier Device Package: E-Line (TO-92 compatible) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 3V, 5V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Input Capacitance (Ciss) (Max) @ Vds: 85 pF @ 25 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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ZVNL120GTC | Diodes Incorporated |
Description: MOSFET N-CH 200V 320MA SOT223 Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 320mA (Ta) Rds On (Max) @ Id, Vgs: 10Ohm @ 250mA, 5V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 1.5V @ 1mA Supplier Device Package: SOT-223-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 3V, 5V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Input Capacitance (Ciss) (Max) @ Vds: 85 pF @ 25 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 4000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||
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ZVP0120AS | Diodes Incorporated |
Description: MOSFET P-CH 200V 110MA TO92-3 Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 25 V Drain to Source Voltage (Vdss): 200 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-92 Vgs(th) (Max) @ Id: 3.5V @ 1mA Power Dissipation (Max): 700mW (Ta) Rds On (Max) @ Id, Vgs: 32Ohm @ 125mA, 10V Current - Continuous Drain (Id) @ 25°C: 110mA (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Packaging: Bulk |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||
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ZVP0120ASTOA | Diodes Incorporated |
Description: MOSFET P-CH 200V 110MA E-LINE |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||
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ZVP0120ASTOB | Diodes Incorporated |
Description: MOSFET P-CH 200V 110MA E-LINE |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||
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ZVP0120ASTZ | Diodes Incorporated |
Description: MOSFET P-CH 200V 110MA E-LINE |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||
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ZVP0545ASTOA | Diodes Incorporated |
Description: MOSFET P-CH 450V 45MA E-LINE |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||
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ZVP0545ASTOB | Diodes Incorporated |
Description: MOSFET P-CH 450V 45MA E-LINE |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||
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ZVP0545ASTZ | Diodes Incorporated |
Description: MOSFET P-CH 450V 45MA E-LINE FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: E-Line-3 Packaging: Tape & Box (TB) Input Capacitance (Ciss) (Max) @ Vds: 120 pF @ 25 V Drain to Source Voltage (Vdss): 450 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: E-Line (TO-92 compatible) Vgs(th) (Max) @ Id: 4.5V @ 1mA Power Dissipation (Max): 700mW (Ta) Rds On (Max) @ Id, Vgs: 150Ohm @ 50mA, 10V Current - Continuous Drain (Id) @ 25°C: 45mA (Ta) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||
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ZVP0545GTC | Diodes Incorporated |
Description: MOSFET P-CH 450V 75MA SOT223 Input Capacitance (Ciss) (Max) @ Vds: 120 pF @ 25 V Drain to Source Voltage (Vdss): 450 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: SOT-223-3 Vgs(th) (Max) @ Id: 4.5V @ 1mA Power Dissipation (Max): 2W (Ta) Rds On (Max) @ Id, Vgs: 150Ohm @ 50mA, 10V Current - Continuous Drain (Id) @ 25°C: 75mA (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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ZVP1320A | Diodes Incorporated |
Description: MOSFET P-CH 200V 70MA TO92-3 Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V Drain to Source Voltage (Vdss): 200 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-92 Vgs(th) (Max) @ Id: 3.5V @ 1mA Power Dissipation (Max): 625mW (Ta) Rds On (Max) @ Id, Vgs: 80Ohm @ 50mA, 10V Current - Continuous Drain (Id) @ 25°C: 70mA (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Packaging: Bulk |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||
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ZVP1320ASTOA | Diodes Incorporated |
Description: MOSFET P-CH 200V 0.07A TO92-3 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||
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ZVP1320ASTOB | Diodes Incorporated |
Description: MOSFET P-CH 200V 0.07A TO92-3 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||
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ZVP1320ASTZ | Diodes Incorporated |
Description: MOSFET P-CH 200V 0.07A TO92-3 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||
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ZVP1320FTC | Diodes Incorporated |
Description: MOSFET P-CH 200V 0.035A SOT23-3 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||
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ZVP2106AS | Diodes Incorporated |
Description: MOSFET P-CH 60V 280MA TO92-3 Packaging: Bulk Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 280mA (Ta) Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V Power Dissipation (Max): 700mW (Ta) Vgs(th) (Max) @ Id: 3.5V @ 1mA Supplier Device Package: TO-92 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 18 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||
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ZVP2106ASTOA | Diodes Incorporated |
Description: MOSFET P-CH 60V 280MA E-LINE Packaging: Tape & Reel (TR) Package / Case: E-Line-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 280mA (Ta) Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V Power Dissipation (Max): 700mW (Ta) Vgs(th) (Max) @ Id: 3.5V @ 1mA Supplier Device Package: E-Line (TO-92 compatible) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 18 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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ZVP2106ASTOB | Diodes Incorporated |
Description: MOSFET P-CH 60V 280MA E-LINE Packaging: Tape & Reel (TR) Package / Case: E-Line-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 280mA (Ta) Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V Power Dissipation (Max): 700mW (Ta) Vgs(th) (Max) @ Id: 3.5V @ 1mA Supplier Device Package: E-Line (TO-92 compatible) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 18 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||
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ZVP2106ASTZ | Diodes Incorporated |
Description: MOSFET P-CH 60V 280MA E-LINE Packaging: Tape & Box (TB) Package / Case: E-Line-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 280mA (Ta) Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V Power Dissipation (Max): 700mW (Ta) Vgs(th) (Max) @ Id: 3.5V @ 1mA Supplier Device Package: E-Line (TO-92 compatible) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 18 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||
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ZVP2106GTC | Diodes Incorporated |
Description: MOSFET P-CH 60V 450MA SOT223 Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 450mA (Ta) Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 3.5V @ 1mA Supplier Device Package: SOT-223-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 18 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 4000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||
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ZVP2110ASTOA | Diodes Incorporated |
Description: MOSFET P-CH 100V 230MA E-LINE Packaging: Tape & Reel (TR) Package / Case: E-Line-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 230mA (Ta) Rds On (Max) @ Id, Vgs: 8Ohm @ 375mA, 10V Power Dissipation (Max): 700mW (Ta) Vgs(th) (Max) @ Id: 3.5V @ 1mA Supplier Device Package: E-Line (TO-92 compatible) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 25 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 16000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||
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ZVP2110ASTOB | Diodes Incorporated |
Description: MOSFET P-CH 100V 230MA E-LINE Packaging: Tape & Reel (TR) Package / Case: E-Line-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 230mA (Ta) Rds On (Max) @ Id, Vgs: 8Ohm @ 375mA, 10V Power Dissipation (Max): 700mW (Ta) Vgs(th) (Max) @ Id: 3.5V @ 1mA Supplier Device Package: E-Line (TO-92 compatible) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 25 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||
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ZVP2110ASTZ | Diodes Incorporated |
Description: MOSFET P-CH 100V 230MA E-LINE Packaging: Tape & Box (TB) Package / Case: E-Line-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 230mA (Ta) Rds On (Max) @ Id, Vgs: 8Ohm @ 375mA, 10V Power Dissipation (Max): 700mW (Ta) Vgs(th) (Max) @ Id: 3.5V @ 1mA Supplier Device Package: E-Line (TO-92 compatible) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 25 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||
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ZVP2110GTC | Diodes Incorporated |
Description: MOSFET P-CH 100V 310MA SOT223 Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 25 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: SOT-223-3 Vgs(th) (Max) @ Id: 3.5V @ 1mA Power Dissipation (Max): 2W (Ta) Rds On (Max) @ Id, Vgs: 8Ohm @ 375mA, 10V Current - Continuous Drain (Id) @ 25°C: 310mA (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 4000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||
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ZVP2120ASTOA | Diodes Incorporated |
Description: MOSFET P-CH 200V 120MA E-LINE |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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ZVP2120ASTOB | Diodes Incorporated |
Description: MOSFET P-CH 200V 120MA E-LINE |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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ZVP2120ASTZ | Diodes Incorporated |
Description: MOSFET P-CH 200V 120MA TO92-3 Packaging: Tape & Box (TB) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 120mA (Ta) Rds On (Max) @ Id, Vgs: 25Ohm @ 150mA, 10V Power Dissipation (Max): 700mW (Ta) Vgs(th) (Max) @ Id: 3.5V @ 1mA Supplier Device Package: TO-92 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 25 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||
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ZVP2120GTC | Diodes Incorporated |
Description: MOSFET P-CH 200V 200MA SOT223 Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 25 V Drain to Source Voltage (Vdss): 200 V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: SOT-223-3 Vgs(th) (Max) @ Id: 3.5V @ 1mA Power Dissipation (Max): 2W (Ta) Rds On (Max) @ Id, Vgs: 25Ohm @ 150mA, 10V Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 4000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||
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ZVP3306ASTOB | Diodes Incorporated |
Description: MOSFET P-CH 60V 160MA E-LINE Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 18 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: E-Line (TO-92 compatible) Vgs(th) (Max) @ Id: 3.5V @ 1mA Power Dissipation (Max): 625mW (Ta) Rds On (Max) @ Id, Vgs: 14Ohm @ 200mA, 10V Current - Continuous Drain (Id) @ 25°C: 160mA (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: E-Line-3 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||
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ZVP3306ASTZ | Diodes Incorporated |
Description: MOSFET P-CH 60V 160MA E-LINE Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 18 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: E-Line (TO-92 compatible) Vgs(th) (Max) @ Id: 3.5V @ 1mA Power Dissipation (Max): 625mW (Ta) Rds On (Max) @ Id, Vgs: 14Ohm @ 200mA, 10V Current - Continuous Drain (Id) @ 25°C: 160mA (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: E-Line-3 Packaging: Tape & Box (TB) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||
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ZVP3306FTC | Diodes Incorporated |
Description: MOSFET P-CH 60V 90MA SOT23-3 Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 18 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: SOT-23-3 Vgs(th) (Max) @ Id: 3.5V @ 1mA Power Dissipation (Max): 330mW (Ta) Rds On (Max) @ Id, Vgs: 14Ohm @ 200mA, 10V Current - Continuous Drain (Id) @ 25°C: 90mA (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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ZVP3310ASTOA | Diodes Incorporated |
Description: MOSFET P-CH 100V 140MA E-LINE Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: E-Line (TO-92 compatible) Vgs(th) (Max) @ Id: 3.5V @ 1mA Power Dissipation (Max): 625mW (Ta) Rds On (Max) @ Id, Vgs: 20Ohm @ 150mA, 10V Current - Continuous Drain (Id) @ 25°C: 140mA (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: E-Line-3 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||
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ZVP3310ASTOB | Diodes Incorporated |
Description: MOSFET P-CH 100V 140MA E-LINE Vgs(th) (Max) @ Id: 3.5V @ 1mA Power Dissipation (Max): 625mW (Ta) Rds On (Max) @ Id, Vgs: 20Ohm @ 150mA, 10V Current - Continuous Drain (Id) @ 25°C: 140mA (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: E-Line-3 Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: E-Line (TO-92 compatible) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 16000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||
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ZVP3310ASTZ | Diodes Incorporated |
Description: MOSFET P-CH 100V 140MA E-LINE Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: E-Line (TO-92 compatible) Vgs(th) (Max) @ Id: 3.5V @ 1mA Power Dissipation (Max): 625mW (Ta) Rds On (Max) @ Id, Vgs: 20Ohm @ 150mA, 10V Current - Continuous Drain (Id) @ 25°C: 140mA (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: E-Line-3 Packaging: Tape & Box (TB) Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V Drain to Source Voltage (Vdss): 100 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| ZVN4210GTC |
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Hersteller: Diodes Incorporated
Description: MOSFET N-CH 100V 800MA SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.5A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Supplier Device Package: SOT-223-3
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 25 V
Description: MOSFET N-CH 100V 800MA SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.5A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Supplier Device Package: SOT-223-3
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 25 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| ZVN4306ASTOA |
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Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 1.1A E-LINE
Description: MOSFET N-CH 60V 1.1A E-LINE
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| ZVN4306ASTOB |
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Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 1.1A E-LINE
Packaging: Tape & Reel (TR)
Package / Case: E-Line-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta)
Rds On (Max) @ Id, Vgs: 330mOhm @ 3A, 10V
Power Dissipation (Max): 850mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: E-Line (TO-92 compatible)
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
Description: MOSFET N-CH 60V 1.1A E-LINE
Packaging: Tape & Reel (TR)
Package / Case: E-Line-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta)
Rds On (Max) @ Id, Vgs: 330mOhm @ 3A, 10V
Power Dissipation (Max): 850mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: E-Line (TO-92 compatible)
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| ZVN4306ASTZ |
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Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 1.1A E-LINE
Packaging: Tape & Box (TB)
Package / Case: E-Line-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta)
Rds On (Max) @ Id, Vgs: 330mOhm @ 3A, 10V
Power Dissipation (Max): 850mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: E-Line (TO-92 compatible)
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
Description: MOSFET N-CH 60V 1.1A E-LINE
Packaging: Tape & Box (TB)
Package / Case: E-Line-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta)
Rds On (Max) @ Id, Vgs: 330mOhm @ 3A, 10V
Power Dissipation (Max): 850mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: E-Line (TO-92 compatible)
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| ZVN4306AVSTOA |
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Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 1.1A E-LINE
Packaging: Tape & Reel (TR)
Package / Case: E-Line-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta)
Rds On (Max) @ Id, Vgs: 330mOhm @ 3A, 10V
Power Dissipation (Max): 850mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: E-Line (TO-92 compatible)
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
Description: MOSFET N-CH 60V 1.1A E-LINE
Packaging: Tape & Reel (TR)
Package / Case: E-Line-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta)
Rds On (Max) @ Id, Vgs: 330mOhm @ 3A, 10V
Power Dissipation (Max): 850mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: E-Line (TO-92 compatible)
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| ZVN4306AVSTOB |
|
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 1.1A E-LINE
Description: MOSFET N-CH 60V 1.1A E-LINE
Produkt ist nicht verfügbar
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| ZVN4306AVSTZ |
|
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 1.1A E-LINE
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Supplier Device Package: E-Line (TO-92 compatible)
Vgs(th) (Max) @ Id: 3V @ 1mA
Power Dissipation (Max): 850mW (Ta)
Rds On (Max) @ Id, Vgs: 330mOhm @ 3A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: E-Line-3
Packaging: Tape & Box (TB)
Description: MOSFET N-CH 60V 1.1A E-LINE
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Supplier Device Package: E-Line (TO-92 compatible)
Vgs(th) (Max) @ Id: 3V @ 1mA
Power Dissipation (Max): 850mW (Ta)
Rds On (Max) @ Id, Vgs: 330mOhm @ 3A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: E-Line-3
Packaging: Tape & Box (TB)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| ZVN4306GTC |
|
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 2.1A SOT223
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Supplier Device Package: SOT-223-3
Vgs(th) (Max) @ Id: 3V @ 1mA
Power Dissipation (Max): 3W (Ta)
Rds On (Max) @ Id, Vgs: 330mOhm @ 3A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.1A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
Drain to Source Voltage (Vdss): 60 V
Description: MOSFET N-CH 60V 2.1A SOT223
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Supplier Device Package: SOT-223-3
Vgs(th) (Max) @ Id: 3V @ 1mA
Power Dissipation (Max): 3W (Ta)
Rds On (Max) @ Id, Vgs: 330mOhm @ 3A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.1A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
Drain to Source Voltage (Vdss): 60 V
Produkt ist nicht verfügbar
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| ZVN4306GVTC |
|
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 2.1A SOT223
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Supplier Device Package: SOT-223-3
Vgs(th) (Max) @ Id: 3V @ 1mA
Power Dissipation (Max): 3W (Ta)
Rds On (Max) @ Id, Vgs: 330mOhm @ 3A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.1A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 60V 2.1A SOT223
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Supplier Device Package: SOT-223-3
Vgs(th) (Max) @ Id: 3V @ 1mA
Power Dissipation (Max): 3W (Ta)
Rds On (Max) @ Id, Vgs: 330mOhm @ 3A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.1A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
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| ZVN4310ASTOB |
|
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 100V 900MA E-LINE
Packaging: Tape & Reel (TR)
Package / Case: E-Line-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 900mA (Ta)
Rds On (Max) @ Id, Vgs: 500mOhm @ 3A, 10V
Power Dissipation (Max): 850mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: E-Line (TO-92 compatible)
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
Description: MOSFET N-CH 100V 900MA E-LINE
Packaging: Tape & Reel (TR)
Package / Case: E-Line-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 900mA (Ta)
Rds On (Max) @ Id, Vgs: 500mOhm @ 3A, 10V
Power Dissipation (Max): 850mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: E-Line (TO-92 compatible)
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| ZVN4310ASTZ |
|
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 100V 900MA E-LINE
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Supplier Device Package: E-Line (TO-92 compatible)
Vgs(th) (Max) @ Id: 3V @ 1mA
Power Dissipation (Max): 850mW (Ta)
Rds On (Max) @ Id, Vgs: 500mOhm @ 3A, 10V
Current - Continuous Drain (Id) @ 25°C: 900mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: E-Line-3
Packaging: Tape & Box (TB)
Description: MOSFET N-CH 100V 900MA E-LINE
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Supplier Device Package: E-Line (TO-92 compatible)
Vgs(th) (Max) @ Id: 3V @ 1mA
Power Dissipation (Max): 850mW (Ta)
Rds On (Max) @ Id, Vgs: 500mOhm @ 3A, 10V
Current - Continuous Drain (Id) @ 25°C: 900mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: E-Line-3
Packaging: Tape & Box (TB)
Produkt ist nicht verfügbar
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| ZVN4310GTC |
|
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 100V 1.67A SOT223
Description: MOSFET N-CH 100V 1.67A SOT223
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
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| ZVN4424ASTOA |
|
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 240V 260MA E-LINE
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 25 V
Drain to Source Voltage (Vdss): 240 V
Vgs (Max): ±40V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Part Status: Obsolete
Supplier Device Package: E-Line (TO-92 compatible)
Vgs(th) (Max) @ Id: 1.8V @ 1mA
Power Dissipation (Max): 750mW (Ta)
Rds On (Max) @ Id, Vgs: 5.5Ohm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 260mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: E-Line-3
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 240V 260MA E-LINE
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 25 V
Drain to Source Voltage (Vdss): 240 V
Vgs (Max): ±40V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Part Status: Obsolete
Supplier Device Package: E-Line (TO-92 compatible)
Vgs(th) (Max) @ Id: 1.8V @ 1mA
Power Dissipation (Max): 750mW (Ta)
Rds On (Max) @ Id, Vgs: 5.5Ohm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 260mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: E-Line-3
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
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Stück im Wert von UAH
| ZVN4424ASTOB |
|
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 240V 260MA E-LINE
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 25 V
Drain to Source Voltage (Vdss): 240 V
Vgs (Max): ±40V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Part Status: Obsolete
Supplier Device Package: E-Line (TO-92 compatible)
Vgs(th) (Max) @ Id: 1.8V @ 1mA
Power Dissipation (Max): 750mW (Ta)
Rds On (Max) @ Id, Vgs: 5.5Ohm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 260mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: E-Line-3
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 240V 260MA E-LINE
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 25 V
Drain to Source Voltage (Vdss): 240 V
Vgs (Max): ±40V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Part Status: Obsolete
Supplier Device Package: E-Line (TO-92 compatible)
Vgs(th) (Max) @ Id: 1.8V @ 1mA
Power Dissipation (Max): 750mW (Ta)
Rds On (Max) @ Id, Vgs: 5.5Ohm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 260mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: E-Line-3
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
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Stück im Wert von UAH
| ZVN4424GTC |
|
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 240V 500MA SOT223
Drain to Source Voltage (Vdss): 240 V
Vgs (Max): ±40V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Part Status: Obsolete
Supplier Device Package: SOT-223-3
Vgs(th) (Max) @ Id: 1.8V @ 1mA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 5.5Ohm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 25 V
Description: MOSFET N-CH 240V 500MA SOT223
Drain to Source Voltage (Vdss): 240 V
Vgs (Max): ±40V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Part Status: Obsolete
Supplier Device Package: SOT-223-3
Vgs(th) (Max) @ Id: 1.8V @ 1mA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 5.5Ohm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 25 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
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| ZVN4525E6TC |
|
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 250V 230MA SOT23-6
Input Capacitance (Ciss) (Max) @ Vds: 72 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 3.65 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±40V
Drive Voltage (Max Rds On, Min Rds On): 2.4V, 10V
Part Status: Obsolete
Supplier Device Package: SOT-23-6
Vgs(th) (Max) @ Id: 1.8V @ 1mA
Power Dissipation (Max): 1.1W (Ta)
Rds On (Max) @ Id, Vgs: 8.5Ohm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 230mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 250V 230MA SOT23-6
Input Capacitance (Ciss) (Max) @ Vds: 72 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 3.65 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±40V
Drive Voltage (Max Rds On, Min Rds On): 2.4V, 10V
Part Status: Obsolete
Supplier Device Package: SOT-23-6
Vgs(th) (Max) @ Id: 1.8V @ 1mA
Power Dissipation (Max): 1.1W (Ta)
Rds On (Max) @ Id, Vgs: 8.5Ohm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 230mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
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Stück im Wert von UAH
| ZVN4525GTC |
|
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 250V 310MA SOT223
Input Capacitance (Ciss) (Max) @ Vds: 72 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 3.65 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±40V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Part Status: Obsolete
Supplier Device Package: SOT-223-3
Vgs(th) (Max) @ Id: 1.8V @ 1mA
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 8.5Ohm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 310mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 250V 310MA SOT223
Input Capacitance (Ciss) (Max) @ Vds: 72 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 3.65 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±40V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Part Status: Obsolete
Supplier Device Package: SOT-223-3
Vgs(th) (Max) @ Id: 1.8V @ 1mA
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 8.5Ohm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 310mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| ZVNL110ASTOA |
|
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 100V 320MA E-LINE
Input Capacitance (Ciss) (Max) @ Vds: 75 pF @ 25 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Supplier Device Package: E-Line (TO-92 compatible)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Power Dissipation (Max): 700mW (Ta)
Rds On (Max) @ Id, Vgs: 3Ohm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 320mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: E-Line-3
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 100V 320MA E-LINE
Input Capacitance (Ciss) (Max) @ Vds: 75 pF @ 25 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Supplier Device Package: E-Line (TO-92 compatible)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Power Dissipation (Max): 700mW (Ta)
Rds On (Max) @ Id, Vgs: 3Ohm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 320mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: E-Line-3
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 16000 Stücke
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Stück im Wert von UAH
| ZVNL110ASTOB |
|
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 100V 320MA E-LINE
Description: MOSFET N-CH 100V 320MA E-LINE
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| ZVNL110ASTZ |
|
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 100V 320MA E-LINE
Packaging: Tape & Box (TB)
Package / Case: E-Line-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 320mA (Ta)
Rds On (Max) @ Id, Vgs: 3Ohm @ 500mA, 10V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: E-Line (TO-92 compatible)
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Input Capacitance (Ciss) (Max) @ Vds: 75 pF @ 25 V
Description: MOSFET N-CH 100V 320MA E-LINE
Packaging: Tape & Box (TB)
Package / Case: E-Line-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 320mA (Ta)
Rds On (Max) @ Id, Vgs: 3Ohm @ 500mA, 10V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: E-Line (TO-92 compatible)
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Input Capacitance (Ciss) (Max) @ Vds: 75 pF @ 25 V
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2000+ | 0.68 EUR |
| 4000+ | 0.62 EUR |
| 6000+ | 0.6 EUR |
| 10000+ | 0.57 EUR |
| ZVNL110GTC |
|
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 100V 600MA SOT223
Description: MOSFET N-CH 100V 600MA SOT223
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| ZVNL120ASTOA |
|
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 200V 180MA E-LINE
Input Capacitance (Ciss) (Max) @ Vds: 85 pF @ 25 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 3V, 5V
Part Status: Obsolete
Supplier Device Package: E-Line (TO-92 compatible)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Power Dissipation (Max): 700mW (Ta)
Rds On (Max) @ Id, Vgs: 10Ohm @ 250mA, 10V
Current - Continuous Drain (Id) @ 25°C: 180mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: E-Line-3
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 200V 180MA E-LINE
Input Capacitance (Ciss) (Max) @ Vds: 85 pF @ 25 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 3V, 5V
Part Status: Obsolete
Supplier Device Package: E-Line (TO-92 compatible)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Power Dissipation (Max): 700mW (Ta)
Rds On (Max) @ Id, Vgs: 10Ohm @ 250mA, 10V
Current - Continuous Drain (Id) @ 25°C: 180mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: E-Line-3
Packaging: Tape & Reel (TR)
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| ZVNL120ASTOB |
|
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 200V 180MA E-LINE
Input Capacitance (Ciss) (Max) @ Vds: 85 pF @ 25 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 3V, 5V
Part Status: Obsolete
Supplier Device Package: E-Line (TO-92 compatible)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Power Dissipation (Max): 700mW (Ta)
Rds On (Max) @ Id, Vgs: 10Ohm @ 250mA, 10V
Current - Continuous Drain (Id) @ 25°C: 180mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: E-Line-3
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 200V 180MA E-LINE
Input Capacitance (Ciss) (Max) @ Vds: 85 pF @ 25 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 3V, 5V
Part Status: Obsolete
Supplier Device Package: E-Line (TO-92 compatible)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Power Dissipation (Max): 700mW (Ta)
Rds On (Max) @ Id, Vgs: 10Ohm @ 250mA, 10V
Current - Continuous Drain (Id) @ 25°C: 180mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: E-Line-3
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| ZVNL120C |
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 200V 180MA TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180mA (Ta)
Rds On (Max) @ Id, Vgs: 10Ohm @ 250mA, 5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: TO-92
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 3V, 5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Input Capacitance (Ciss) (Max) @ Vds: 85 pF @ 25 V
Description: MOSFET N-CH 200V 180MA TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180mA (Ta)
Rds On (Max) @ Id, Vgs: 10Ohm @ 250mA, 5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: TO-92
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 3V, 5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Input Capacitance (Ciss) (Max) @ Vds: 85 pF @ 25 V
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| ZVNL120CSTOA |
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 200V 180MA E-LINE
Packaging: Tape & Reel (TR)
Package / Case: E-Line-3
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180mA (Ta)
Rds On (Max) @ Id, Vgs: 10Ohm @ 250mA, 5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: E-Line (TO-92 compatible)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 3V, 5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Input Capacitance (Ciss) (Max) @ Vds: 85 pF @ 25 V
Description: MOSFET N-CH 200V 180MA E-LINE
Packaging: Tape & Reel (TR)
Package / Case: E-Line-3
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180mA (Ta)
Rds On (Max) @ Id, Vgs: 10Ohm @ 250mA, 5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: E-Line (TO-92 compatible)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 3V, 5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Input Capacitance (Ciss) (Max) @ Vds: 85 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| ZVNL120CSTOB |
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 200V 180MA E-LINE
Packaging: Tape & Reel (TR)
Package / Case: E-Line-3
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180mA (Ta)
Rds On (Max) @ Id, Vgs: 10Ohm @ 250mA, 5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: E-Line (TO-92 compatible)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 3V, 5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Input Capacitance (Ciss) (Max) @ Vds: 85 pF @ 25 V
Description: MOSFET N-CH 200V 180MA E-LINE
Packaging: Tape & Reel (TR)
Package / Case: E-Line-3
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180mA (Ta)
Rds On (Max) @ Id, Vgs: 10Ohm @ 250mA, 5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: E-Line (TO-92 compatible)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 3V, 5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Input Capacitance (Ciss) (Max) @ Vds: 85 pF @ 25 V
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| ZVNL120CSTZ |
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 200V 180MA E-LINE
Packaging: Tape & Box (TB)
Package / Case: E-Line-3
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180mA (Ta)
Rds On (Max) @ Id, Vgs: 10Ohm @ 250mA, 5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: E-Line (TO-92 compatible)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 3V, 5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Input Capacitance (Ciss) (Max) @ Vds: 85 pF @ 25 V
Description: MOSFET N-CH 200V 180MA E-LINE
Packaging: Tape & Box (TB)
Package / Case: E-Line-3
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180mA (Ta)
Rds On (Max) @ Id, Vgs: 10Ohm @ 250mA, 5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: E-Line (TO-92 compatible)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 3V, 5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Input Capacitance (Ciss) (Max) @ Vds: 85 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| ZVNL120GTC |
|
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 200V 320MA SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 320mA (Ta)
Rds On (Max) @ Id, Vgs: 10Ohm @ 250mA, 5V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: SOT-223-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 3V, 5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Input Capacitance (Ciss) (Max) @ Vds: 85 pF @ 25 V
Description: MOSFET N-CH 200V 320MA SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 320mA (Ta)
Rds On (Max) @ Id, Vgs: 10Ohm @ 250mA, 5V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: SOT-223-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 3V, 5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Input Capacitance (Ciss) (Max) @ Vds: 85 pF @ 25 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
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| ZVP0120AS |
|
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 200V 110MA TO92-3
Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 25 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-92
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Power Dissipation (Max): 700mW (Ta)
Rds On (Max) @ Id, Vgs: 32Ohm @ 125mA, 10V
Current - Continuous Drain (Id) @ 25°C: 110mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Packaging: Bulk
Description: MOSFET P-CH 200V 110MA TO92-3
Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 25 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-92
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Power Dissipation (Max): 700mW (Ta)
Rds On (Max) @ Id, Vgs: 32Ohm @ 125mA, 10V
Current - Continuous Drain (Id) @ 25°C: 110mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Packaging: Bulk
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
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| ZVP0120ASTOA |
|
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 200V 110MA E-LINE
Description: MOSFET P-CH 200V 110MA E-LINE
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
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| ZVP0120ASTOB |
|
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 200V 110MA E-LINE
Description: MOSFET P-CH 200V 110MA E-LINE
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
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| ZVP0120ASTZ |
|
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 200V 110MA E-LINE
Description: MOSFET P-CH 200V 110MA E-LINE
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
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| ZVP0545ASTOA |
|
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 450V 45MA E-LINE
Description: MOSFET P-CH 450V 45MA E-LINE
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
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| ZVP0545ASTOB |
|
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 450V 45MA E-LINE
Description: MOSFET P-CH 450V 45MA E-LINE
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
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| ZVP0545ASTZ |
|
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 450V 45MA E-LINE
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: E-Line-3
Packaging: Tape & Box (TB)
Input Capacitance (Ciss) (Max) @ Vds: 120 pF @ 25 V
Drain to Source Voltage (Vdss): 450 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: E-Line (TO-92 compatible)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Power Dissipation (Max): 700mW (Ta)
Rds On (Max) @ Id, Vgs: 150Ohm @ 50mA, 10V
Current - Continuous Drain (Id) @ 25°C: 45mA (Ta)
Description: MOSFET P-CH 450V 45MA E-LINE
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: E-Line-3
Packaging: Tape & Box (TB)
Input Capacitance (Ciss) (Max) @ Vds: 120 pF @ 25 V
Drain to Source Voltage (Vdss): 450 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: E-Line (TO-92 compatible)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Power Dissipation (Max): 700mW (Ta)
Rds On (Max) @ Id, Vgs: 150Ohm @ 50mA, 10V
Current - Continuous Drain (Id) @ 25°C: 45mA (Ta)
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
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Stück im Wert von UAH
| ZVP0545GTC |
|
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 450V 75MA SOT223
Input Capacitance (Ciss) (Max) @ Vds: 120 pF @ 25 V
Drain to Source Voltage (Vdss): 450 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: SOT-223-3
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 150Ohm @ 50mA, 10V
Current - Continuous Drain (Id) @ 25°C: 75mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
Description: MOSFET P-CH 450V 75MA SOT223
Input Capacitance (Ciss) (Max) @ Vds: 120 pF @ 25 V
Drain to Source Voltage (Vdss): 450 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: SOT-223-3
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 150Ohm @ 50mA, 10V
Current - Continuous Drain (Id) @ 25°C: 75mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| ZVP1320A |
|
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 200V 70MA TO92-3
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-92
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Power Dissipation (Max): 625mW (Ta)
Rds On (Max) @ Id, Vgs: 80Ohm @ 50mA, 10V
Current - Continuous Drain (Id) @ 25°C: 70mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Packaging: Bulk
Description: MOSFET P-CH 200V 70MA TO92-3
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-92
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Power Dissipation (Max): 625mW (Ta)
Rds On (Max) @ Id, Vgs: 80Ohm @ 50mA, 10V
Current - Continuous Drain (Id) @ 25°C: 70mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Packaging: Bulk
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
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Stück im Wert von UAH
| ZVP1320ASTOA |
|
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 200V 0.07A TO92-3
Description: MOSFET P-CH 200V 0.07A TO92-3
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
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Stück im Wert von UAH
| ZVP1320ASTOB |
|
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 200V 0.07A TO92-3
Description: MOSFET P-CH 200V 0.07A TO92-3
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
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Stück im Wert von UAH
| ZVP1320ASTZ |
|
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 200V 0.07A TO92-3
Description: MOSFET P-CH 200V 0.07A TO92-3
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
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| ZVP1320FTC |
|
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 200V 0.035A SOT23-3
Description: MOSFET P-CH 200V 0.035A SOT23-3
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
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| ZVP2106AS |
|
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 60V 280MA TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 280mA (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Supplier Device Package: TO-92
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 18 V
Description: MOSFET P-CH 60V 280MA TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 280mA (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Supplier Device Package: TO-92
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 18 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
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Stück im Wert von UAH
| ZVP2106ASTOA |
|
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 60V 280MA E-LINE
Packaging: Tape & Reel (TR)
Package / Case: E-Line-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 280mA (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Supplier Device Package: E-Line (TO-92 compatible)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 18 V
Description: MOSFET P-CH 60V 280MA E-LINE
Packaging: Tape & Reel (TR)
Package / Case: E-Line-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 280mA (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Supplier Device Package: E-Line (TO-92 compatible)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 18 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| ZVP2106ASTOB |
|
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 60V 280MA E-LINE
Packaging: Tape & Reel (TR)
Package / Case: E-Line-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 280mA (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Supplier Device Package: E-Line (TO-92 compatible)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 18 V
Description: MOSFET P-CH 60V 280MA E-LINE
Packaging: Tape & Reel (TR)
Package / Case: E-Line-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 280mA (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Supplier Device Package: E-Line (TO-92 compatible)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 18 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
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| ZVP2106ASTZ |
|
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 60V 280MA E-LINE
Packaging: Tape & Box (TB)
Package / Case: E-Line-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 280mA (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Supplier Device Package: E-Line (TO-92 compatible)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 18 V
Description: MOSFET P-CH 60V 280MA E-LINE
Packaging: Tape & Box (TB)
Package / Case: E-Line-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 280mA (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Supplier Device Package: E-Line (TO-92 compatible)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 18 V
Produkt ist nicht verfügbar
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| ZVP2106GTC |
|
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 60V 450MA SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 450mA (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Supplier Device Package: SOT-223-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 18 V
Description: MOSFET P-CH 60V 450MA SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 450mA (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Supplier Device Package: SOT-223-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 18 V
Produkt ist nicht verfügbar
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| ZVP2110ASTOA |
|
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 100V 230MA E-LINE
Packaging: Tape & Reel (TR)
Package / Case: E-Line-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 230mA (Ta)
Rds On (Max) @ Id, Vgs: 8Ohm @ 375mA, 10V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Supplier Device Package: E-Line (TO-92 compatible)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 25 V
Description: MOSFET P-CH 100V 230MA E-LINE
Packaging: Tape & Reel (TR)
Package / Case: E-Line-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 230mA (Ta)
Rds On (Max) @ Id, Vgs: 8Ohm @ 375mA, 10V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Supplier Device Package: E-Line (TO-92 compatible)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 25 V
Produkt ist nicht verfügbar
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| ZVP2110ASTOB |
|
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 100V 230MA E-LINE
Packaging: Tape & Reel (TR)
Package / Case: E-Line-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 230mA (Ta)
Rds On (Max) @ Id, Vgs: 8Ohm @ 375mA, 10V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Supplier Device Package: E-Line (TO-92 compatible)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 25 V
Description: MOSFET P-CH 100V 230MA E-LINE
Packaging: Tape & Reel (TR)
Package / Case: E-Line-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 230mA (Ta)
Rds On (Max) @ Id, Vgs: 8Ohm @ 375mA, 10V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Supplier Device Package: E-Line (TO-92 compatible)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 25 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
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| ZVP2110ASTZ |
|
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 100V 230MA E-LINE
Packaging: Tape & Box (TB)
Package / Case: E-Line-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 230mA (Ta)
Rds On (Max) @ Id, Vgs: 8Ohm @ 375mA, 10V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Supplier Device Package: E-Line (TO-92 compatible)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 25 V
Description: MOSFET P-CH 100V 230MA E-LINE
Packaging: Tape & Box (TB)
Package / Case: E-Line-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 230mA (Ta)
Rds On (Max) @ Id, Vgs: 8Ohm @ 375mA, 10V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Supplier Device Package: E-Line (TO-92 compatible)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 25 V
Produkt ist nicht verfügbar
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| ZVP2110GTC |
|
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 100V 310MA SOT223
Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 25 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: SOT-223-3
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 8Ohm @ 375mA, 10V
Current - Continuous Drain (Id) @ 25°C: 310mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
Description: MOSFET P-CH 100V 310MA SOT223
Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 25 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: SOT-223-3
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 8Ohm @ 375mA, 10V
Current - Continuous Drain (Id) @ 25°C: 310mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
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| ZVP2120ASTOA |
|
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 200V 120MA E-LINE
Description: MOSFET P-CH 200V 120MA E-LINE
Produkt ist nicht verfügbar
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| ZVP2120ASTOB |
|
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 200V 120MA E-LINE
Description: MOSFET P-CH 200V 120MA E-LINE
Produkt ist nicht verfügbar
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| ZVP2120ASTZ |
|
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 200V 120MA TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 120mA (Ta)
Rds On (Max) @ Id, Vgs: 25Ohm @ 150mA, 10V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Supplier Device Package: TO-92
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 25 V
Description: MOSFET P-CH 200V 120MA TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 120mA (Ta)
Rds On (Max) @ Id, Vgs: 25Ohm @ 150mA, 10V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Supplier Device Package: TO-92
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 25 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
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| ZVP2120GTC |
|
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 200V 200MA SOT223
Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 25 V
Drain to Source Voltage (Vdss): 200 V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: SOT-223-3
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 25Ohm @ 150mA, 10V
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
Description: MOSFET P-CH 200V 200MA SOT223
Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 25 V
Drain to Source Voltage (Vdss): 200 V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: SOT-223-3
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 25Ohm @ 150mA, 10V
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
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| ZVP3306ASTOB |
|
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 60V 160MA E-LINE
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 18 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: E-Line (TO-92 compatible)
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Power Dissipation (Max): 625mW (Ta)
Rds On (Max) @ Id, Vgs: 14Ohm @ 200mA, 10V
Current - Continuous Drain (Id) @ 25°C: 160mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: E-Line-3
Packaging: Tape & Reel (TR)
Description: MOSFET P-CH 60V 160MA E-LINE
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 18 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: E-Line (TO-92 compatible)
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Power Dissipation (Max): 625mW (Ta)
Rds On (Max) @ Id, Vgs: 14Ohm @ 200mA, 10V
Current - Continuous Drain (Id) @ 25°C: 160mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: E-Line-3
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
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| ZVP3306ASTZ |
|
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 60V 160MA E-LINE
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 18 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: E-Line (TO-92 compatible)
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Power Dissipation (Max): 625mW (Ta)
Rds On (Max) @ Id, Vgs: 14Ohm @ 200mA, 10V
Current - Continuous Drain (Id) @ 25°C: 160mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: E-Line-3
Packaging: Tape & Box (TB)
Description: MOSFET P-CH 60V 160MA E-LINE
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 18 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: E-Line (TO-92 compatible)
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Power Dissipation (Max): 625mW (Ta)
Rds On (Max) @ Id, Vgs: 14Ohm @ 200mA, 10V
Current - Continuous Drain (Id) @ 25°C: 160mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: E-Line-3
Packaging: Tape & Box (TB)
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
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| ZVP3306FTC |
|
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 60V 90MA SOT23-3
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 18 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Power Dissipation (Max): 330mW (Ta)
Rds On (Max) @ Id, Vgs: 14Ohm @ 200mA, 10V
Current - Continuous Drain (Id) @ 25°C: 90mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Description: MOSFET P-CH 60V 90MA SOT23-3
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 18 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Power Dissipation (Max): 330mW (Ta)
Rds On (Max) @ Id, Vgs: 14Ohm @ 200mA, 10V
Current - Continuous Drain (Id) @ 25°C: 90mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| ZVP3310ASTOA |
|
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 100V 140MA E-LINE
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: E-Line (TO-92 compatible)
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Power Dissipation (Max): 625mW (Ta)
Rds On (Max) @ Id, Vgs: 20Ohm @ 150mA, 10V
Current - Continuous Drain (Id) @ 25°C: 140mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: E-Line-3
Packaging: Tape & Reel (TR)
Description: MOSFET P-CH 100V 140MA E-LINE
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: E-Line (TO-92 compatible)
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Power Dissipation (Max): 625mW (Ta)
Rds On (Max) @ Id, Vgs: 20Ohm @ 150mA, 10V
Current - Continuous Drain (Id) @ 25°C: 140mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: E-Line-3
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
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| ZVP3310ASTOB |
|
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 100V 140MA E-LINE
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Power Dissipation (Max): 625mW (Ta)
Rds On (Max) @ Id, Vgs: 20Ohm @ 150mA, 10V
Current - Continuous Drain (Id) @ 25°C: 140mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: E-Line-3
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: E-Line (TO-92 compatible)
Description: MOSFET P-CH 100V 140MA E-LINE
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Power Dissipation (Max): 625mW (Ta)
Rds On (Max) @ Id, Vgs: 20Ohm @ 150mA, 10V
Current - Continuous Drain (Id) @ 25°C: 140mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: E-Line-3
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: E-Line (TO-92 compatible)
Produkt ist nicht verfügbar
Mindestbestellmenge: 16000 Stücke
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| ZVP3310ASTZ |
|
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 100V 140MA E-LINE
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: E-Line (TO-92 compatible)
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Power Dissipation (Max): 625mW (Ta)
Rds On (Max) @ Id, Vgs: 20Ohm @ 150mA, 10V
Current - Continuous Drain (Id) @ 25°C: 140mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: E-Line-3
Packaging: Tape & Box (TB)
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
Drain to Source Voltage (Vdss): 100 V
Description: MOSFET P-CH 100V 140MA E-LINE
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: E-Line (TO-92 compatible)
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Power Dissipation (Max): 625mW (Ta)
Rds On (Max) @ Id, Vgs: 20Ohm @ 150mA, 10V
Current - Continuous Drain (Id) @ 25°C: 140mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: E-Line-3
Packaging: Tape & Box (TB)
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
Drain to Source Voltage (Vdss): 100 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
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