Produkte > DIODES INCORPORATED > Alle Produkte des Herstellers DIODES INCORPORATED (73711) > Seite 127 nach 1229
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||
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ZXCL5213V26H5TA | Diodes Incorporated |
 Description: IC REG LINEAR 2.6V 150MA SC70-5Packaging: Tape & Reel (TR) Package / Case: 5-TSSOP, SC-70-5, SOT-353 Output Type: Fixed Mounting Type: Surface Mount Current - Output: 150mA Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Current - Quiescent (Iq): 50 µA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: SC-70-5 Voltage - Output (Min/Fixed): 2.6V Control Features: Enable Voltage Dropout (Max): 0.31V @ 100mA Protection Features: Over Current, Over Temperature Current - Supply (Max): 120 µA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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ZXCL5213V28H5TA | Diodes Incorporated |
Description: IC REG LINEAR 2.8V 150MA SC70-5 Packaging: Tape & Reel (TR) Package / Case: 5-TSSOP, SC-70-5, SOT-353 Output Type: Fixed Mounting Type: Surface Mount Current - Output: 150mA Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Current - Quiescent (Iq): 50 µA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: SC-70-5 Voltage - Output (Min/Fixed): 2.8V Control Features: Enable Voltage Dropout (Max): 0.28V @ 100mA Protection Features: Over Current, Over Temperature Current - Supply (Max): 120 µA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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ZXCL5213V40H5TA | Diodes Incorporated |
Description: IC REG LINEAR 4V 150MA SC-70-5 Packaging: Tape & Reel (TR) Package / Case: 5-TSSOP, SC-70-5, SOT-353 Output Type: Fixed Mounting Type: Surface Mount Current - Output: 150mA Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Current - Quiescent (Iq): 50 µA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: SC-70-5 Voltage - Output (Min/Fixed): 4V Control Features: Enable Voltage Dropout (Max): 0.28V @ 100mA Protection Features: Over Current, Over Temperature Current - Supply (Max): 120 µA |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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ZXCT1041E5TA | Diodes Incorporated |
Description: IC CURRENT MONITOR 1% SOT23-5 Packaging: Tape & Reel (TR) Package / Case: SC-74A, SOT-753 Sensing Method: High-Side Mounting Type: Surface Mount Function: Current Monitor Voltage - Input: 2.7V ~ 20V Accuracy: ±1% Operating Temperature: -40°C ~ 125°C Supplier Device Package: SOT-23-5 Part Status: Active |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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ZXCT1051E5TA | Diodes Incorporated |
Description: IC CURRENT MONITOR 1% SOT23-5 Packaging: Tape & Reel (TR) Package / Case: SC-74A, SOT-753 Sensing Method: High/Low-Side Mounting Type: Surface Mount Function: Current Monitor Voltage - Input: 2.7V ~ 20V Accuracy: ±1% Operating Temperature: -40°C ~ 125°C Supplier Device Package: SOT-23-5 Part Status: Active |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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ZXFV202E5TD | Diodes Incorporated |
Description: IC AMP VIDEO CFA 1CHAN SOT23-5 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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ZXFV203N14TC | Diodes Incorporated |
Description: IC AMP CURRENT FEEDBACK 14SO -3db Bandwidth: 210 MHz Current - Output / Channel: 40 mA Current - Supply: 7.5 mA Number of Circuits: 3 Supplier Device Package: 14-SO Voltage - Supply, Single/Dual (±): ±4.75V ~ 5.25V Slew Rate: 600V/µs Applications: Current Feedback Mounting Type: Surface Mount Output Type: Single-Ended Package / Case: 14-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 30000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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ZXM41N10FTC | Diodes Incorporated |
Description: MOSFET N-CH 100V 170MA SOT23-3 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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ZXM61N03FTC | Diodes Incorporated |
Description: MOSFET N-CH 30V 1.4A SOT23-3 Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 4.1 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: SOT-23-3 Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 625mW (Ta) Rds On (Max) @ Id, Vgs: 220mOhm @ 910mA, 10V Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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ZXM61P02FTC | Diodes Incorporated |
Description: MOSFET P-CH 20V 900MA SOT23-3 Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V Supplier Device Package: SOT-23-3 Vgs(th) (Max) @ Id: 1.5V @ 250µA Power Dissipation (Max): 625mW (Ta) Rds On (Max) @ Id, Vgs: 600mOhm @ 610mA, 4.5V Current - Continuous Drain (Id) @ 25°C: 900mA (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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ZXM61P03FTC | Diodes Incorporated |
Description: MOSFET P-CH 30V 1.1A SOT23-3 Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Obsolete Supplier Device Package: SOT-23-3 Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 625mW (Ta) Rds On (Max) @ Id, Vgs: 350mOhm @ 600mA, 10V Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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ZXM62N03GTA | Diodes Incorporated |
Description: MOSFET N-CH 30V 3.4A/4.7A SOT223 Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 9.6 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: SOT-223-3 Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 2W (Ta) Rds On (Max) @ Id, Vgs: 110mOhm @ 2.2A, 10V Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta), 4.7A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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ZXM62P03GTA | Diodes Incorporated |
Description: MOSFET P-CH 30V 2.9A SOT223 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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ZXM64N02XTC | Diodes Incorporated |
Description: MOSFET N-CH 20V 5.4A 8MSOP Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V Supplier Device Package: 8-MSOP Vgs(th) (Max) @ Id: 700mV @ 250µA (Min) Power Dissipation (Max): 1.1W (Ta) Rds On (Max) @ Id, Vgs: 40mOhm @ 3.8A, 4.5V Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 4000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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ZXM64N03XTC | Diodes Incorporated |
Description: MOSFET N-CH 30V 5A 8MSOP |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 4000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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ZXM64P02XTC | Diodes Incorporated |
Description: MOSFET P-CH 20V 3.5A 8MSOP |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 4000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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ZXM64P03XTC | Diodes Incorporated |
Description: MOSFET P-CH 30V 3.8A 8MSOP Input Capacitance (Ciss) (Max) @ Vds: 825 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: 8-MSOP Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 1.1W (Ta) Rds On (Max) @ Id, Vgs: 75mOhm @ 2.4A, 10V Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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ZXM66P02N8TC | Diodes Incorporated |
Description: MOSFET P-CH 20V 6.4A 8SO Input Capacitance (Ciss) (Max) @ Vds: 2068 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 43.3 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Supplier Device Package: 8-SO Vgs(th) (Max) @ Id: 700mV @ 250µA (Min) Power Dissipation (Max): 1.56W (Ta) Rds On (Max) @ Id, Vgs: 25mOhm @ 3.2A, 4.5V Current - Continuous Drain (Id) @ 25°C: 6.4A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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ZXMC3A16DN8TC | Diodes Incorporated |
Description: MOSFET N/P-CH 30V 4.9A/4.1A 8SO Part Status: Active Supplier Device Package: 8-SO Vgs(th) (Max) @ Id: 1V @ 250µA (Min) FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 17.5nC @ 10V Rds On (Max) @ Id, Vgs: 35mOhm @ 9A, 10V Input Capacitance (Ciss) (Max) @ Vds: 796pF @ 25V Current - Continuous Drain (Id) @ 25°C: 4.9A, 4.1A Drain to Source Voltage (Vdss): 30V Power - Max: 1.25W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: N and P-Channel Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) |
auf Bestellung 20000 Stücke: Lieferzeit 10-14 Tag (e) |
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ZXMC3A17DN8TA | Diodes Incorporated |
Description: MOSFET N/P-CH 30V 4.1A/3.4A 8SO Part Status: Active Supplier Device Package: 8-SO Vgs(th) (Max) @ Id: 1V @ 250µA (Min) FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 12.2nC @ 10V Rds On (Max) @ Id, Vgs: 50mOhm @ 7.8A, 10V Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 25V Current - Continuous Drain (Id) @ 25°C: 4.1A, 3.4A Drain to Source Voltage (Vdss): 30V Power - Max: 1.25W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: N and P-Channel Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) |
auf Bestellung 14756 Stücke: Lieferzeit 10-14 Tag (e) |
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ZXMC3A17DN8TC | Diodes Incorporated |
Description: MOSFET N/P-CH 30V 8SOIC |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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ZXMC3A18DN8TA | Diodes Incorporated |
Description: MOSFET N/P-CH 30V 5.8A/4.8A 8SO Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.8W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5.8A, 4.8A Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 25V Rds On (Max) @ Id, Vgs: 25mOhm @ 5.8A, 10V Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 250µA (Min) Supplier Device Package: 8-SO |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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ZXMC4559DN8TA | Diodes Incorporated |
Description: MOSFET N/P-CH 60V 3.6A/2.6A 8SO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.25W Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 3.6A, 2.6A Input Capacitance (Ciss) (Max) @ Vds: 1063pF @ 30V, 1021pF @ 30V Rds On (Max) @ Id, Vgs: 55mOhm @ 4.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 20.4nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 250µA (Min) Supplier Device Package: 8-SO Part Status: Active |
auf Bestellung 365 Stücke: Lieferzeit 10-14 Tag (e) |
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ZXMC4A16DN8TA | Diodes Incorporated |
Description: MOSFET N/P-CH 40V 4A/3.6A 8SOIC |
auf Bestellung 3500 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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ZXMC4A16DN8TC | Diodes Incorporated |
Description: MOSFET N/P-CH 40V 4A/3.6A 8SOIC |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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ZXMD63C02XTC | Diodes Incorporated |
Description: MOSFET N/P-CH 20V 8MSOP |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 4000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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ZXMD63C03XTC | Diodes Incorporated |
Description: MOSFET N/P-CH 30V 8MSOP |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 4000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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ZXMD63N02XTC | Diodes Incorporated |
Description: MOSFET 2N-CH 20V 2.5A 8MSOP |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 8000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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ZXMD63N03XTC | Diodes Incorporated |
Description: MOSFET 2N-CH 30V 2.3A 8MSOP |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 4000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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ZXMD63P02XTC | Diodes Incorporated |
Description: MOSFET 2P-CH 20V 8MSOP Supplier Device Package: 8-MSOP Vgs(th) (Max) @ Id: 700mV @ 250µA (Min) FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 5.25nC @ 4.5V Rds On (Max) @ Id, Vgs: 270mOhm @ 1.2A, 4.5V Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 15V Drain to Source Voltage (Vdss): 20V Power - Max: 1.04W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 P-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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ZXMD63P03XTC | Diodes Incorporated |
Description: MOSFET 2P-CH 30V 8MSOP |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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ZXMD65P02N8TC | Diodes Incorporated |
Description: MOSFET 2P-CH 20V 4A 8SOIC |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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ZXMHC3A01T8TA | Diodes Incorporated |
Description: MOSFET 2N/2P-CH 30V 2.7A/2A SM8 Packaging: Tape & Reel (TR) Package / Case: SOT-223-8 Mounting Type: Surface Mount Configuration: 2 N and 2 P-Channel (Full Bridge) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.3W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 2.7A, 2A Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 25V, 204pF @ 15V Rds On (Max) @ Id, Vgs: 120mOhm @ 2.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 3.9nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SM8 Part Status: Active |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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ZXMHN6A07T8TA | Diodes Incorporated |
Description: MOSFET 4N-CH 60V 1.4A SM8 Drain to Source Voltage (Vdss): 60V Power - Max: 1.6W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 4 N-Channel (Full Bridge) Mounting Type: Surface Mount Package / Case: SOT-223-8 Packaging: Tape & Reel (TR) Supplier Device Package: SM8 Vgs(th) (Max) @ Id: 3V @ 250µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 10V Rds On (Max) @ Id, Vgs: 300mOhm @ 1.8A, 10V Input Capacitance (Ciss) (Max) @ Vds: 166pF @ 40V Current - Continuous Drain (Id) @ 25°C: 1.4A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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ZXMN10A07FTC | Diodes Incorporated |
Description: MOSFET N-CH 100V 700MA SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 700mA (Ta) Rds On (Max) @ Id, Vgs: 700mOhm @ 1.5A, 10V Power Dissipation (Max): 625mW (Ta) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: SOT-23-3 Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 2.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 138 pF @ 50 V Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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ZXMN10A08DN8TC | Diodes Incorporated |
Description: MOSFET 2N-CH 100V 1.6A 8SOIC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
| ZXMN10A08E6TC | Diodes Incorporated |
Description: MOSFET N-CH 100V 1.5A SOT26 Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Part Status: Active Supplier Device Package: SOT-26 Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 1.1W (Ta) Rds On (Max) @ Id, Vgs: 250mOhm @ 3.2A, 10V Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 405 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 7.7 nC @ 10 V Drain to Source Voltage (Vdss): 100 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||
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ZXMN10A11GTC | Diodes Incorporated |
Description: MOSFET N-CH 100V 1.7A SOT223 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 4000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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ZXMN10B08E6TC | Diodes Incorporated |
Description: MOSFET N-CH 100V 1.6A SOT26 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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ZXMN2A01E6TC | Diodes Incorporated |
Description: MOSFET N-CH 20V 2.5A SOT23-6 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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ZXMN2A01FTC | Diodes Incorporated |
Description: MOSFET N-CH 20V 1.9A SOT23-3 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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ZXMN2A02X8TC | Diodes Incorporated |
Description: MOSFET N-CH 20V 6.2A 8-MSOP |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 4000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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ZXMN2A03E6TC | Diodes Incorporated |
Description: MOSFET N-CH 20V 3.7A SOT23-6 Power Dissipation (Max): 1.1W (Ta) Input Capacitance (Ciss) (Max) @ Vds: 837 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Supplier Device Package: SOT-23-6 Vgs(th) (Max) @ Id: 700mV @ 250µA (Min) Rds On (Max) @ Id, Vgs: 55mOhm @ 7.2A, 4.5V Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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ZXMN2A04DN8TC | Diodes Incorporated |
Description: MOSFET 2N-CH 20V 5.9A 8SOIC |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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ZXMN2AM832TA | Diodes Incorporated | Description: MOSFET 2N-CH 20V 2.9A 8MLP |
auf Bestellung 3401 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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ZXMN3A01E6TC | Diodes Incorporated |
Description: MOSFET N-CH 30V 2.4A SOT23-6 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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ZXMN3A01FTC | Diodes Incorporated |
Description: MOSFET N-CH 30V 1.8A SOT23-3 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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ZXMN3A02X8TC | Diodes Incorporated |
Description: MOSFET N-CH 30V 5.3A 8MSOP |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 4000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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ZXMN3A03E6TC | Diodes Incorporated |
Description: MOSFET N-CH 30V 3.7A SOT23-6 Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 12.6 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: SOT-23-6 Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 1.1W (Ta) Rds On (Max) @ Id, Vgs: 50mOhm @ 7.8A, 10V Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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ZXMN3A04DN8TC | Diodes Incorporated |
Description: MOSFET 2N-CH 30V 6.5A 8SO Input Capacitance (Ciss) (Max) @ Vds: 1890pF @ 15V Current - Continuous Drain (Id) @ 25°C: 6.5A Drain to Source Voltage (Vdss): 30V Power - Max: 1.81W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) Supplier Device Package: 8-SO Vgs(th) (Max) @ Id: 1V @ 250µA (Min) FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 36.8nC @ 10V Rds On (Max) @ Id, Vgs: 20mOhm @ 12.6A, 10V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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ZXMN3A06DN8TC | Diodes Incorporated |
Description: MOSFET 2N-CH 30V 4.9A 8SOIC |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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ZXMN3A06N8TA | Diodes Incorporated | Description: MOSFET 2N-CH 30V 8SOIC |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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ZXMN3AM832TA | Diodes Incorporated |
Description: MOSFET 2N-CH 30V 2.9A 8MLP |
auf Bestellung 3169 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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ZXMN3B01FTA | Diodes Incorporated |
Description: MOSFET N-CH 30V 1.7A SOT23-3 Input Capacitance (Ciss) (Max) @ Vds: 258 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 2.93 nC @ 4.5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Part Status: Active Supplier Device Package: SOT-23-3 Vgs(th) (Max) @ Id: 700mV @ 250µA (Min) Power Dissipation (Max): 625mW (Ta) Rds On (Max) @ Id, Vgs: 150mOhm @ 1.7A, 4.5V Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) |
auf Bestellung 537000 Stücke: Lieferzeit 10-14 Tag (e) |
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ZXMN3B04N8TC | Diodes Incorporated |
Description: MOSFET N-CH 30V 7.2A 8SO Input Capacitance (Ciss) (Max) @ Vds: 2480 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 23.1 nC @ 4.5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Supplier Device Package: 8-SO Vgs(th) (Max) @ Id: 700mV @ 250µA (Min) Power Dissipation (Max): 2W (Ta) Rds On (Max) @ Id, Vgs: 25mOhm @ 7.2A, 4.5V Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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ZXMN3B14FTA | Diodes Incorporated |
Description: MOSFET N-CH 30V 2.9A SOT23-3 Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Supplier Device Package: SOT-23-3 Vgs(th) (Max) @ Id: 700mV @ 250µA (Min) Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 80mOhm @ 3.1A, 4.5V Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 568 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 4.5 V Drain to Source Voltage (Vdss): 30 V |
auf Bestellung 135000 Stücke: Lieferzeit 10-14 Tag (e) |
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ZXMN6A07FTC | Diodes Incorporated |
Description: MOSFET N-CH 60V 1.2A SOT23-3 Input Capacitance (Ciss) (Max) @ Vds: 166 pF @ 40 V Gate Charge (Qg) (Max) @ Vgs: 3.2 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: SOT-23-3 Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 625mW (Ta) Rds On (Max) @ Id, Vgs: 250mOhm @ 1.8A, 10V Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||
| ZXMN6A08E6TC | Diodes Incorporated |
Description: MOSFET N-CH 60V 2.8A SOT26 Input Capacitance (Ciss) (Max) @ Vds: 459 pF @ 40 V Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Obsolete Supplier Device Package: SOT-26 Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 1.1W (Ta) Rds On (Max) @ Id, Vgs: 80mOhm @ 4.8A, 10V Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||
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ZXMN6A09DN8TC | Diodes Incorporated |
Description: MOSFET 2N-CH 60V 4.3A 8SO Supplier Device Package: 8-SO Vgs(th) (Max) @ Id: 3V @ 250µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 24.2nC @ 5V Rds On (Max) @ Id, Vgs: 40mOhm @ 8.2A, 10V Input Capacitance (Ciss) (Max) @ Vds: 1407pF @ 40V Current - Continuous Drain (Id) @ 25°C: 4.3A Drain to Source Voltage (Vdss): 60V Power - Max: 1.25W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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ZXMN6A11DN8TC | Diodes Incorporated |
Description: MOSFET 2N-CH 60V 2.5A 8SO Supplier Device Package: 8-SO Vgs(th) (Max) @ Id: 1V @ 250µA (Min) FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 5.7nC @ 10V Rds On (Max) @ Id, Vgs: 120mOhm @ 2.5A, 10V Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 40V Current - Continuous Drain (Id) @ 25°C: 2.5A Drain to Source Voltage (Vdss): 60V Power - Max: 1.8W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| ZXCL5213V26H5TA |
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Hersteller: Diodes Incorporated
Description: IC REG LINEAR 2.6V 150MA SC70-5
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 50 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: SC-70-5
Voltage - Output (Min/Fixed): 2.6V
Control Features: Enable
Voltage Dropout (Max): 0.31V @ 100mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 120 µA
Description: IC REG LINEAR 2.6V 150MA SC70-5
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 50 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: SC-70-5
Voltage - Output (Min/Fixed): 2.6V
Control Features: Enable
Voltage Dropout (Max): 0.31V @ 100mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 120 µA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| ZXCL5213V28H5TA |
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Hersteller: Diodes Incorporated
Description: IC REG LINEAR 2.8V 150MA SC70-5
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 50 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: SC-70-5
Voltage - Output (Min/Fixed): 2.8V
Control Features: Enable
Voltage Dropout (Max): 0.28V @ 100mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 120 µA
Description: IC REG LINEAR 2.8V 150MA SC70-5
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 50 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: SC-70-5
Voltage - Output (Min/Fixed): 2.8V
Control Features: Enable
Voltage Dropout (Max): 0.28V @ 100mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 120 µA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| ZXCL5213V40H5TA |
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Hersteller: Diodes Incorporated
Description: IC REG LINEAR 4V 150MA SC-70-5
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 50 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: SC-70-5
Voltage - Output (Min/Fixed): 4V
Control Features: Enable
Voltage Dropout (Max): 0.28V @ 100mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 120 µA
Description: IC REG LINEAR 4V 150MA SC-70-5
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 50 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: SC-70-5
Voltage - Output (Min/Fixed): 4V
Control Features: Enable
Voltage Dropout (Max): 0.28V @ 100mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 120 µA
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| ZXCT1041E5TA |
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Hersteller: Diodes Incorporated
Description: IC CURRENT MONITOR 1% SOT23-5
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Sensing Method: High-Side
Mounting Type: Surface Mount
Function: Current Monitor
Voltage - Input: 2.7V ~ 20V
Accuracy: ±1%
Operating Temperature: -40°C ~ 125°C
Supplier Device Package: SOT-23-5
Part Status: Active
Description: IC CURRENT MONITOR 1% SOT23-5
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Sensing Method: High-Side
Mounting Type: Surface Mount
Function: Current Monitor
Voltage - Input: 2.7V ~ 20V
Accuracy: ±1%
Operating Temperature: -40°C ~ 125°C
Supplier Device Package: SOT-23-5
Part Status: Active
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| ZXCT1051E5TA |
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Hersteller: Diodes Incorporated
Description: IC CURRENT MONITOR 1% SOT23-5
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Sensing Method: High/Low-Side
Mounting Type: Surface Mount
Function: Current Monitor
Voltage - Input: 2.7V ~ 20V
Accuracy: ±1%
Operating Temperature: -40°C ~ 125°C
Supplier Device Package: SOT-23-5
Part Status: Active
Description: IC CURRENT MONITOR 1% SOT23-5
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Sensing Method: High/Low-Side
Mounting Type: Surface Mount
Function: Current Monitor
Voltage - Input: 2.7V ~ 20V
Accuracy: ±1%
Operating Temperature: -40°C ~ 125°C
Supplier Device Package: SOT-23-5
Part Status: Active
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| ZXFV202E5TD |
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Hersteller: Diodes Incorporated
Description: IC AMP VIDEO CFA 1CHAN SOT23-5
Description: IC AMP VIDEO CFA 1CHAN SOT23-5
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| ZXFV203N14TC |
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Hersteller: Diodes Incorporated
Description: IC AMP CURRENT FEEDBACK 14SO
-3db Bandwidth: 210 MHz
Current - Output / Channel: 40 mA
Current - Supply: 7.5 mA
Number of Circuits: 3
Supplier Device Package: 14-SO
Voltage - Supply, Single/Dual (±): ±4.75V ~ 5.25V
Slew Rate: 600V/µs
Applications: Current Feedback
Mounting Type: Surface Mount
Output Type: Single-Ended
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Description: IC AMP CURRENT FEEDBACK 14SO
-3db Bandwidth: 210 MHz
Current - Output / Channel: 40 mA
Current - Supply: 7.5 mA
Number of Circuits: 3
Supplier Device Package: 14-SO
Voltage - Supply, Single/Dual (±): ±4.75V ~ 5.25V
Slew Rate: 600V/µs
Applications: Current Feedback
Mounting Type: Surface Mount
Output Type: Single-Ended
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 30000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| ZXM41N10FTC |
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Hersteller: Diodes Incorporated
Description: MOSFET N-CH 100V 170MA SOT23-3
Description: MOSFET N-CH 100V 170MA SOT23-3
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| ZXM61N03FTC |
|
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 1.4A SOT23-3
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 4.1 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 625mW (Ta)
Rds On (Max) @ Id, Vgs: 220mOhm @ 910mA, 10V
Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 30V 1.4A SOT23-3
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 4.1 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 625mW (Ta)
Rds On (Max) @ Id, Vgs: 220mOhm @ 910mA, 10V
Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| ZXM61P02FTC |
|
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 20V 900MA SOT23-3
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 625mW (Ta)
Rds On (Max) @ Id, Vgs: 600mOhm @ 610mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 900mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Description: MOSFET P-CH 20V 900MA SOT23-3
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 625mW (Ta)
Rds On (Max) @ Id, Vgs: 600mOhm @ 610mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 900mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| ZXM61P03FTC |
|
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 30V 1.1A SOT23-3
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 625mW (Ta)
Rds On (Max) @ Id, Vgs: 350mOhm @ 600mA, 10V
Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Description: MOSFET P-CH 30V 1.1A SOT23-3
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 625mW (Ta)
Rds On (Max) @ Id, Vgs: 350mOhm @ 600mA, 10V
Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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| ZXM62N03GTA |
|
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 3.4A/4.7A SOT223
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 9.6 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: SOT-223-3
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 110mOhm @ 2.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta), 4.7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 30V 3.4A/4.7A SOT223
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 9.6 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: SOT-223-3
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 110mOhm @ 2.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta), 4.7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| ZXM62P03GTA |
|
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 30V 2.9A SOT223
Description: MOSFET P-CH 30V 2.9A SOT223
Produkt ist nicht verfügbar
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| ZXM64N02XTC |
|
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 20V 5.4A 8MSOP
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
Supplier Device Package: 8-MSOP
Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
Power Dissipation (Max): 1.1W (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 3.8A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 20V 5.4A 8MSOP
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
Supplier Device Package: 8-MSOP
Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
Power Dissipation (Max): 1.1W (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 3.8A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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| ZXM64N03XTC |
|
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 5A 8MSOP
Description: MOSFET N-CH 30V 5A 8MSOP
Produkt ist nicht verfügbar
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| ZXM64P02XTC |
|
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 20V 3.5A 8MSOP
Description: MOSFET P-CH 20V 3.5A 8MSOP
Produkt ist nicht verfügbar
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| ZXM64P03XTC |
|
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 30V 3.8A 8MSOP
Input Capacitance (Ciss) (Max) @ Vds: 825 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-MSOP
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 1.1W (Ta)
Rds On (Max) @ Id, Vgs: 75mOhm @ 2.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Packaging: Tape & Reel (TR)
Description: MOSFET P-CH 30V 3.8A 8MSOP
Input Capacitance (Ciss) (Max) @ Vds: 825 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-MSOP
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 1.1W (Ta)
Rds On (Max) @ Id, Vgs: 75mOhm @ 2.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| ZXM66P02N8TC |
|
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 20V 6.4A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 2068 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 43.3 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
Power Dissipation (Max): 1.56W (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 3.2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 6.4A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Description: MOSFET P-CH 20V 6.4A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 2068 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 43.3 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
Power Dissipation (Max): 1.56W (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 3.2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 6.4A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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| ZXMC3A16DN8TC |
|
Hersteller: Diodes Incorporated
Description: MOSFET N/P-CH 30V 4.9A/4.1A 8SO
Part Status: Active
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 17.5nC @ 10V
Rds On (Max) @ Id, Vgs: 35mOhm @ 9A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 796pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 4.9A, 4.1A
Drain to Source Voltage (Vdss): 30V
Power - Max: 1.25W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Description: MOSFET N/P-CH 30V 4.9A/4.1A 8SO
Part Status: Active
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 17.5nC @ 10V
Rds On (Max) @ Id, Vgs: 35mOhm @ 9A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 796pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 4.9A, 4.1A
Drain to Source Voltage (Vdss): 30V
Power - Max: 1.25W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 1.11 EUR |
| 5000+ | 1.06 EUR |
| ZXMC3A17DN8TA |
|
Hersteller: Diodes Incorporated
Description: MOSFET N/P-CH 30V 4.1A/3.4A 8SO
Part Status: Active
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 12.2nC @ 10V
Rds On (Max) @ Id, Vgs: 50mOhm @ 7.8A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 4.1A, 3.4A
Drain to Source Voltage (Vdss): 30V
Power - Max: 1.25W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Description: MOSFET N/P-CH 30V 4.1A/3.4A 8SO
Part Status: Active
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 12.2nC @ 10V
Rds On (Max) @ Id, Vgs: 50mOhm @ 7.8A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 4.1A, 3.4A
Drain to Source Voltage (Vdss): 30V
Power - Max: 1.25W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
auf Bestellung 14756 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 7+ | 3.01 EUR |
| 11+ | 1.9 EUR |
| 100+ | 1.27 EUR |
| ZXMC3A17DN8TC |
|
Hersteller: Diodes Incorporated
Description: MOSFET N/P-CH 30V 8SOIC
Description: MOSFET N/P-CH 30V 8SOIC
Produkt ist nicht verfügbar
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| ZXMC3A18DN8TA |
|
Hersteller: Diodes Incorporated
Description: MOSFET N/P-CH 30V 5.8A/4.8A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.8W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.8A, 4.8A
Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 25V
Rds On (Max) @ Id, Vgs: 25mOhm @ 5.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Supplier Device Package: 8-SO
Description: MOSFET N/P-CH 30V 5.8A/4.8A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.8W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.8A, 4.8A
Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 25V
Rds On (Max) @ Id, Vgs: 25mOhm @ 5.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Supplier Device Package: 8-SO
Produkt ist nicht verfügbar
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| ZXMC4559DN8TA |
|
Hersteller: Diodes Incorporated
Description: MOSFET N/P-CH 60V 3.6A/2.6A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.25W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3.6A, 2.6A
Input Capacitance (Ciss) (Max) @ Vds: 1063pF @ 30V, 1021pF @ 30V
Rds On (Max) @ Id, Vgs: 55mOhm @ 4.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20.4nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Supplier Device Package: 8-SO
Part Status: Active
Description: MOSFET N/P-CH 60V 3.6A/2.6A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.25W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3.6A, 2.6A
Input Capacitance (Ciss) (Max) @ Vds: 1063pF @ 30V, 1021pF @ 30V
Rds On (Max) @ Id, Vgs: 55mOhm @ 4.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20.4nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Supplier Device Package: 8-SO
Part Status: Active
auf Bestellung 365 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 6+ | 3.83 EUR |
| 10+ | 2.43 EUR |
| 25+ | 2.06 EUR |
| 50+ | 1.83 EUR |
| 100+ | 1.63 EUR |
| ZXMC4A16DN8TA |
|
Hersteller: Diodes Incorporated
Description: MOSFET N/P-CH 40V 4A/3.6A 8SOIC
Description: MOSFET N/P-CH 40V 4A/3.6A 8SOIC
auf Bestellung 3500 Stücke:
Lieferzeit 10-14 Tag (e)
| ZXMC4A16DN8TC |
|
Hersteller: Diodes Incorporated
Description: MOSFET N/P-CH 40V 4A/3.6A 8SOIC
Description: MOSFET N/P-CH 40V 4A/3.6A 8SOIC
Produkt ist nicht verfügbar
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| ZXMD63C02XTC |
|
Hersteller: Diodes Incorporated
Description: MOSFET N/P-CH 20V 8MSOP
Description: MOSFET N/P-CH 20V 8MSOP
Produkt ist nicht verfügbar
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| ZXMD63C03XTC |
|
Hersteller: Diodes Incorporated
Description: MOSFET N/P-CH 30V 8MSOP
Description: MOSFET N/P-CH 30V 8MSOP
Produkt ist nicht verfügbar
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| ZXMD63N02XTC |
|
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 20V 2.5A 8MSOP
Description: MOSFET 2N-CH 20V 2.5A 8MSOP
Produkt ist nicht verfügbar
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| ZXMD63N03XTC |
|
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 30V 2.3A 8MSOP
Description: MOSFET 2N-CH 30V 2.3A 8MSOP
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
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| ZXMD63P02XTC |
|
Hersteller: Diodes Incorporated
Description: MOSFET 2P-CH 20V 8MSOP
Supplier Device Package: 8-MSOP
Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 5.25nC @ 4.5V
Rds On (Max) @ Id, Vgs: 270mOhm @ 1.2A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 15V
Drain to Source Voltage (Vdss): 20V
Power - Max: 1.04W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Packaging: Tape & Reel (TR)
Description: MOSFET 2P-CH 20V 8MSOP
Supplier Device Package: 8-MSOP
Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 5.25nC @ 4.5V
Rds On (Max) @ Id, Vgs: 270mOhm @ 1.2A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 15V
Drain to Source Voltage (Vdss): 20V
Power - Max: 1.04W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| ZXMD63P03XTC |
|
Hersteller: Diodes Incorporated
Description: MOSFET 2P-CH 30V 8MSOP
Description: MOSFET 2P-CH 30V 8MSOP
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| ZXMD65P02N8TC |
|
Hersteller: Diodes Incorporated
Description: MOSFET 2P-CH 20V 4A 8SOIC
Description: MOSFET 2P-CH 20V 4A 8SOIC
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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| ZXMHC3A01T8TA |
|
Hersteller: Diodes Incorporated
Description: MOSFET 2N/2P-CH 30V 2.7A/2A SM8
Packaging: Tape & Reel (TR)
Package / Case: SOT-223-8
Mounting Type: Surface Mount
Configuration: 2 N and 2 P-Channel (Full Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.3W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 2.7A, 2A
Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 25V, 204pF @ 15V
Rds On (Max) @ Id, Vgs: 120mOhm @ 2.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 3.9nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SM8
Part Status: Active
Description: MOSFET 2N/2P-CH 30V 2.7A/2A SM8
Packaging: Tape & Reel (TR)
Package / Case: SOT-223-8
Mounting Type: Surface Mount
Configuration: 2 N and 2 P-Channel (Full Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.3W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 2.7A, 2A
Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 25V, 204pF @ 15V
Rds On (Max) @ Id, Vgs: 120mOhm @ 2.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 3.9nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SM8
Part Status: Active
Produkt ist nicht verfügbar
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| ZXMHN6A07T8TA |
|
Hersteller: Diodes Incorporated
Description: MOSFET 4N-CH 60V 1.4A SM8
Drain to Source Voltage (Vdss): 60V
Power - Max: 1.6W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 4 N-Channel (Full Bridge)
Mounting Type: Surface Mount
Package / Case: SOT-223-8
Packaging: Tape & Reel (TR)
Supplier Device Package: SM8
Vgs(th) (Max) @ Id: 3V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 10V
Rds On (Max) @ Id, Vgs: 300mOhm @ 1.8A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 166pF @ 40V
Current - Continuous Drain (Id) @ 25°C: 1.4A
Description: MOSFET 4N-CH 60V 1.4A SM8
Drain to Source Voltage (Vdss): 60V
Power - Max: 1.6W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 4 N-Channel (Full Bridge)
Mounting Type: Surface Mount
Package / Case: SOT-223-8
Packaging: Tape & Reel (TR)
Supplier Device Package: SM8
Vgs(th) (Max) @ Id: 3V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 10V
Rds On (Max) @ Id, Vgs: 300mOhm @ 1.8A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 166pF @ 40V
Current - Continuous Drain (Id) @ 25°C: 1.4A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| ZXMN10A07FTC |
|
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 100V 700MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 700mA (Ta)
Rds On (Max) @ Id, Vgs: 700mOhm @ 1.5A, 10V
Power Dissipation (Max): 625mW (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 2.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 138 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 100V 700MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 700mA (Ta)
Rds On (Max) @ Id, Vgs: 700mOhm @ 1.5A, 10V
Power Dissipation (Max): 625mW (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 2.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 138 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
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| ZXMN10A08DN8TC |
|
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 100V 1.6A 8SOIC
Description: MOSFET 2N-CH 100V 1.6A 8SOIC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| ZXMN10A08E6TC |
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 100V 1.5A SOT26
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: SOT-26
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 1.1W (Ta)
Rds On (Max) @ Id, Vgs: 250mOhm @ 3.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 405 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 7.7 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Description: MOSFET N-CH 100V 1.5A SOT26
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: SOT-26
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 1.1W (Ta)
Rds On (Max) @ Id, Vgs: 250mOhm @ 3.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 405 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 7.7 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Produkt ist nicht verfügbar
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| ZXMN10A11GTC |
|
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 100V 1.7A SOT223
Description: MOSFET N-CH 100V 1.7A SOT223
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
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Stück im Wert von UAH
| ZXMN10B08E6TC |
|
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 100V 1.6A SOT26
Description: MOSFET N-CH 100V 1.6A SOT26
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| ZXMN2A01E6TC |
|
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 20V 2.5A SOT23-6
Description: MOSFET N-CH 20V 2.5A SOT23-6
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
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| ZXMN2A01FTC |
|
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 20V 1.9A SOT23-3
Description: MOSFET N-CH 20V 1.9A SOT23-3
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| ZXMN2A02X8TC |
|
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 20V 6.2A 8-MSOP
Description: MOSFET N-CH 20V 6.2A 8-MSOP
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
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Stück im Wert von UAH
| ZXMN2A03E6TC |
|
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 20V 3.7A SOT23-6
Power Dissipation (Max): 1.1W (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 837 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Supplier Device Package: SOT-23-6
Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 55mOhm @ 7.2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 20V 3.7A SOT23-6
Power Dissipation (Max): 1.1W (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 837 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Supplier Device Package: SOT-23-6
Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 55mOhm @ 7.2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
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Stück im Wert von UAH
| ZXMN2A04DN8TC |
|
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 20V 5.9A 8SOIC
Description: MOSFET 2N-CH 20V 5.9A 8SOIC
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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Stück im Wert von UAH
| ZXMN2AM832TA |
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 20V 2.9A 8MLP
Description: MOSFET 2N-CH 20V 2.9A 8MLP
auf Bestellung 3401 Stücke:
Lieferzeit 10-14 Tag (e)
| ZXMN3A01E6TC |
|
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 2.4A SOT23-6
Description: MOSFET N-CH 30V 2.4A SOT23-6
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
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Stück im Wert von UAH
| ZXMN3A01FTC |
|
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 1.8A SOT23-3
Description: MOSFET N-CH 30V 1.8A SOT23-3
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
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Stück im Wert von UAH
| ZXMN3A02X8TC |
|
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 5.3A 8MSOP
Description: MOSFET N-CH 30V 5.3A 8MSOP
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
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Stück im Wert von UAH
| ZXMN3A03E6TC |
|
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 3.7A SOT23-6
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 12.6 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: SOT-23-6
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 1.1W (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 7.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 30V 3.7A SOT23-6
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 12.6 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: SOT-23-6
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 1.1W (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 7.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| ZXMN3A04DN8TC |
|
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 30V 6.5A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 1890pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 6.5A
Drain to Source Voltage (Vdss): 30V
Power - Max: 1.81W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 36.8nC @ 10V
Rds On (Max) @ Id, Vgs: 20mOhm @ 12.6A, 10V
Description: MOSFET 2N-CH 30V 6.5A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 1890pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 6.5A
Drain to Source Voltage (Vdss): 30V
Power - Max: 1.81W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 36.8nC @ 10V
Rds On (Max) @ Id, Vgs: 20mOhm @ 12.6A, 10V
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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Stück im Wert von UAH
| ZXMN3A06DN8TC |
|
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 30V 4.9A 8SOIC
Description: MOSFET 2N-CH 30V 4.9A 8SOIC
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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Stück im Wert von UAH
| ZXMN3A06N8TA |
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 30V 8SOIC
Description: MOSFET 2N-CH 30V 8SOIC
Produkt ist nicht verfügbar
Mindestbestellmenge: 500 Stücke
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| ZXMN3AM832TA |
|
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 30V 2.9A 8MLP
Description: MOSFET 2N-CH 30V 2.9A 8MLP
auf Bestellung 3169 Stücke:
Lieferzeit 10-14 Tag (e)
| ZXMN3B01FTA |
|
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 1.7A SOT23-3
Input Capacitance (Ciss) (Max) @ Vds: 258 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 2.93 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
Power Dissipation (Max): 625mW (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 1.7A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 30V 1.7A SOT23-3
Input Capacitance (Ciss) (Max) @ Vds: 258 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 2.93 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
Power Dissipation (Max): 625mW (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 1.7A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
auf Bestellung 537000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.36 EUR |
| 6000+ | 0.33 EUR |
| 9000+ | 0.31 EUR |
| ZXMN3B04N8TC |
|
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 7.2A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 2480 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 23.1 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 7.2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 30V 7.2A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 2480 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 23.1 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 7.2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| ZXMN3B14FTA |
|
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 2.9A SOT23-3
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 3.1A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 568 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Description: MOSFET N-CH 30V 2.9A SOT23-3
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 3.1A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 568 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
auf Bestellung 135000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.43 EUR |
| 6000+ | 0.4 EUR |
| 9000+ | 0.39 EUR |
| ZXMN6A07FTC |
|
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 1.2A SOT23-3
Input Capacitance (Ciss) (Max) @ Vds: 166 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 3.2 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 625mW (Ta)
Rds On (Max) @ Id, Vgs: 250mOhm @ 1.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 60V 1.2A SOT23-3
Input Capacitance (Ciss) (Max) @ Vds: 166 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 3.2 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 625mW (Ta)
Rds On (Max) @ Id, Vgs: 250mOhm @ 1.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| ZXMN6A08E6TC |
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 2.8A SOT26
Input Capacitance (Ciss) (Max) @ Vds: 459 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: SOT-26
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 1.1W (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 4.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 60V 2.8A SOT26
Input Capacitance (Ciss) (Max) @ Vds: 459 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: SOT-26
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 1.1W (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 4.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| ZXMN6A09DN8TC |
|
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 60V 4.3A 8SO
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 3V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 24.2nC @ 5V
Rds On (Max) @ Id, Vgs: 40mOhm @ 8.2A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1407pF @ 40V
Current - Continuous Drain (Id) @ 25°C: 4.3A
Drain to Source Voltage (Vdss): 60V
Power - Max: 1.25W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Description: MOSFET 2N-CH 60V 4.3A 8SO
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 3V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 24.2nC @ 5V
Rds On (Max) @ Id, Vgs: 40mOhm @ 8.2A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1407pF @ 40V
Current - Continuous Drain (Id) @ 25°C: 4.3A
Drain to Source Voltage (Vdss): 60V
Power - Max: 1.25W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 60V 2.5A 8SO
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 5.7nC @ 10V
Rds On (Max) @ Id, Vgs: 120mOhm @ 2.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 40V
Current - Continuous Drain (Id) @ 25°C: 2.5A
Drain to Source Voltage (Vdss): 60V
Power - Max: 1.8W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Description: MOSFET 2N-CH 60V 2.5A 8SO
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 5.7nC @ 10V
Rds On (Max) @ Id, Vgs: 120mOhm @ 2.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 40V
Current - Continuous Drain (Id) @ 25°C: 2.5A
Drain to Source Voltage (Vdss): 60V
Power - Max: 1.8W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH