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BZT52C3V3LP-7 BZT52C3V3LP-7 Diodes Incorporated DS_31_BZT52C2V4LP-BZT52C39LP.pdf Description: DIODE ZENER 3.3V 250MW 2DFN
Packaging: Tape & Reel (TR)
Tolerance: ±6%
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 3.3 V
Impedance (Max) (Zzt): 95 Ohms
Supplier Device Package: X1-DFN1006-2
Part Status: Active
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Produkt ist nicht verfügbar
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BZT52C3V6LP-7 BZT52C3V6LP-7 Diodes Incorporated DS_31_BZT52C2V4LP-BZT52C39LP.pdf Description: DIODE ZENER 3.6V 250MW 2DFN
Packaging: Tape & Reel (TR)
Tolerance: ±6%
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 3.6 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: X1-DFN1006-2
Part Status: Active
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
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BZT52C4V3LP-7 BZT52C4V3LP-7 Diodes Incorporated DS_31_BZT52C2V4LP-BZT52C39LP.pdf Description: DIODE ZENER 4.3V 250MW 2DFN
Current - Reverse Leakage @ Vr: 3 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 250 mW
Part Status: Active
Supplier Device Package: X1-DFN1006-2
Impedance (Max) (Zzt): 90 Ohms
Voltage - Zener (Nom) (Vz): 4.3 V
Operating Temperature: -65°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: 0402 (1006 Metric)
Tolerance: ±7%
Packaging: Tape & Reel (TR)
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BZT52C4V7LP-7 BZT52C4V7LP-7 Diodes Incorporated DS_31_BZT52C2V4LP-BZT52C39LP.pdf Description: DIODE ZENER 4.7V 250MW 2DFN
Packaging: Tape & Reel (TR)
Tolerance: ±6%
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 4.7 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: X1-DFN1006-2
Part Status: Active
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 3 µA @ 2 V
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DDC144NS-7 DDC144NS-7 Diodes Incorporated ds30747.pdf Description: TRANS 2NPN PREBIAS 0.2W SOT363
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DDTC114ELP-7 DDTC114ELP-7 Diodes Incorporated ds30945.pdf Description: TRANS PREBIAS NPN 50V 0.1A 3DFN
Resistor - Emitter Base (R2): 10 kOhms
Resistor - Base (R1): 10 kOhms
Frequency - Transition: 250 MHz
Power - Max: 250 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: X1-DFN1006-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 5V
Current - Collector Cutoff (Max): 1µA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 70mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: 3-UFDFN
Packaging: Tape & Reel (TR)
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DDTC114YLP-7 DDTC114YLP-7 Diodes Incorporated ds30755.pdf Description: TRANS PREBIAS NPN 50V 0.1A 3DFN
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: X1-DFN1006-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 50mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: 3-UFDFN
Packaging: Tape & Reel (TR)
Resistors Included: R1 and R2
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 10 kOhms
Frequency - Transition: 250 MHz
Power - Max: 250 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Produkt ist nicht verfügbar
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DMN2004K-7 DMN2004K-7 Diodes Incorporated DMN2004K.pdf Description: MOSFET N-CH 20V 630MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 630mA (Ta)
Rds On (Max) @ Id, Vgs: 550mOhm @ 540mA, 4.5V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 16 V
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DMN2004VK-7 DMN2004VK-7 Diodes Incorporated DMN2004VK.pdf Description: MOSFET 2N-CH 20V 0.54A SOT563
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)
Part Status: Active
Supplier Device Package: SOT-563
Vgs(th) (Max) @ Id: 1V @ 250µA
FET Feature: Logic Level Gate
Rds On (Max) @ Id, Vgs: 550mOhm @ 540mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 16V
Current - Continuous Drain (Id) @ 25°C: 540mA
Drain to Source Voltage (Vdss): 20V
Power - Max: 250mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
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DMN2112SN-7 Diodes Incorporated Description: MOSFET N-CH 20V 1.2A SC59-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta)
Rds On (Max) @ Id, Vgs: 100mOhm @ 500mA, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 1mA
Supplier Device Package: SC-59-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 10 V
Produkt ist nicht verfügbar
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DMN5L06VAK-7 DMN5L06VAK-7 Diodes Incorporated DMN5_L06VK_VAK_010VAK_Rev13_Feb2017.pdf Description: MOSFET 2N-CH 50V 0.28A SOT563
Supplier Device Package: SOT-563
Vgs(th) (Max) @ Id: 1V @ 250µA
FET Feature: Logic Level Gate
Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 280mA
Drain to Source Voltage (Vdss): 50V
Power - Max: 250mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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DMP3030SN-7 DMP3030SN-7 Diodes Incorporated DMP3030SN.pdf Description: MOSFET P-CH 30V 700MA SC59-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 700mA (Ta)
Rds On (Max) @ Id, Vgs: 250mOhm @ 400mA, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: SC-59-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 160 pF @ 10 V
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DZT3150-13 DZT3150-13 Diodes Incorporated ds30785.pdf Description: TRANS NPN 25V 5A SOT-223
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DZT851-13 DZT851-13 Diodes Incorporated ds30738.pdf Description: TRANS NPN 60V 6A SOT223-3
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 6 A
Supplier Device Package: SOT-223-3
Frequency - Transition: 130MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2A, 1V
Current - Collector Cutoff (Max): 50nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 375mV @ 300mA, 6A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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DZT853-13 DZT853-13 Diodes Incorporated ds30737.pdf Description: TRANS NPN 100V 6A SOT223-3
Frequency - Transition: 130MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2A, 2V
Current - Collector Cutoff (Max): 10nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 340mV @ 500mA, 5A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 100 V
Current - Collector (Ic) (Max): 6 A
Part Status: Obsolete
Supplier Device Package: SOT-223-3
Produkt ist nicht verfügbar
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DZT953-13 DZT953-13 Diodes Incorporated ds30941.pdf Description: TRANS PNP 100V 5A SOT223-3
Voltage - Collector Emitter Breakdown (Max): 100 V
Current - Collector (Ic) (Max): 5 A
Part Status: Obsolete
Supplier Device Package: SOT-223-3
Frequency - Transition: 125MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 1V
Current - Collector Cutoff (Max): 50nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 420mV @ 400mA, 4A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
Power - Max: 1 W
Produkt ist nicht verfügbar
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HBDM60V600W-7 HBDM60V600W-7 Diodes Incorporated HBDM60V600W.pdf Description: TRANS NPN/PNP 65V/60V SOT363
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V / 100 @ 150mA, 10V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 400mV @ 10mA, 100mA / 500mV @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max): 65V, 60V
Current - Collector (Ic) (Max): 500mA, 600mA
Power - Max: 200mW
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: 1 NPN, 1 PNP
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Supplier Device Package: SOT-363
Produkt ist nicht verfügbar
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PD3S120L-7 PD3S120L-7 Diodes Incorporated ds30793.pdf Description: DIODE SCHOTTK 20V 1A POWERDI 323
Current - Reverse Leakage @ Vr: 160 µA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 420 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 20 V
Operating Temperature - Junction: -65°C ~ 125°C
Supplier Device Package: PowerDI™ 323
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 46pF @ 10V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: PowerDI™ 323
Packaging: Tape & Reel (TR)
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PD3SD2580-7 PD3SD2580-7 Diodes Incorporated ds30720.pdf Description: DIODE GP 80V 250MA POWERDI323
Technology: Standard
Reverse Recovery Time (trr): 4 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: PowerDI™ 323
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 100 nA @ 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Voltage - DC Reverse (Vr) (Max): 80 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: PowerDI™ 323
Current - Average Rectified (Io): 250mA
Capacitance @ Vr, F: 2.3pF @ 0V, 1MHz
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PD3Z284C13-7 PD3Z284C13-7 Diodes Incorporated PD3Z284C2V4-PD3Z284C39.pdf Description: DIODE ZENER 13V 500MW POWERDI323
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PD3Z284C15-7 PD3Z284C15-7 Diodes Incorporated PD3Z284C2V4-PD3Z284C39.pdf Description: DIODE ZENER 15V 500MW POWERDI323
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: PowerDI™ 323
Impedance (Max) (Zzt): 15 Ohms
Voltage - Zener (Nom) (Vz): 15 V
Operating Temperature: -65°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: PowerDI™ 323
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 100 nA @ 10.5 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
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PD3Z284C16-7 PD3Z284C16-7 Diodes Incorporated PD3Z284C2V4-PD3Z284C39.pdf Description: DIODE ZENER 16V 500MW POWERDI323
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PD3Z284C20-7 PD3Z284C20-7 Diodes Incorporated PD3Z284C2V4-PD3Z284C39.pdf Description: DIODE ZENER 20V 500MW POWERDI323
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PD3Z284C22-7 PD3Z284C22-7 Diodes Incorporated PD3Z284C2V4-PD3Z284C39.pdf Description: DIODE ZENER 22V 500MW POWERDI323
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PD3Z284C24-7 PD3Z284C24-7 Diodes Incorporated PD3Z284C2V4-PD3Z284C39.pdf Description: DIODE ZENER 24V 500MW POWERDI323
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PD3Z284C27-7 PD3Z284C27-7 Diodes Incorporated PD3Z284C2V4-PD3Z284C39.pdf Description: DIODE ZENER 27V 500MW POWERDI323
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PD3Z284C2V4-7 PD3Z284C2V4-7 Diodes Incorporated PD3Z284C2V4-PD3Z284C39.pdf Description: DIODE ZENER 2.4V POWERDI323
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PD3Z284C2V7-7 PD3Z284C2V7-7 Diodes Incorporated PD3Z284C2V4_PD3Z284C39.pdf Description: DIODE ZENER 2.7V 500MW PWRDI323
Packaging: Tape & Reel (TR)
Tolerance: ±7%
Package / Case: PowerDI™ 323
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 2.7 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: PowerDI™ 323
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 20 µA @ 1 V
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PD3Z284C30-7 PD3Z284C30-7 Diodes Incorporated PD3Z284C2V4-PD3Z284C39.pdf Description: DIODE ZENER 30V 500MW POWERDI323
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PD3Z284C33-7 PD3Z284C33-7 Diodes Incorporated PD3Z284C2V4-PD3Z284C39.pdf Description: DIODE ZENER 33V 500MW POWERDI323
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PD3Z284C36-7 PD3Z284C36-7 Diodes Incorporated PD3Z284C2V4-PD3Z284C39.pdf Description: DIODE ZENER 36V 500MW POWERDI323
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PD3Z284C39-7 PD3Z284C39-7 Diodes Incorporated PD3Z284C2V4-PD3Z284C39.pdf Description: DIODE ZENER 39V 500MW POWERDI323
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PD3Z284C3V0-7 PD3Z284C3V0-7 Diodes Incorporated PD3Z284C2V4-PD3Z284C39.pdf Description: DIODE ZENER 3V 500MW POWERDI323
Produkt ist nicht verfügbar
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PD3Z284C3V3-7 PD3Z284C3V3-7 Diodes Incorporated PD3Z284C2V4-PD3Z284C39.pdf Description: DIODE ZENER 3.3V POWERDI323
auf Bestellung 300024000 Stücke:
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PD3Z284C3V6-7 PD3Z284C3V6-7 Diodes Incorporated PD3Z284C2V4-PD3Z284C39.pdf Description: DIODE ZENER 3.6V POWERDI323
Produkt ist nicht verfügbar
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PD3Z284C4V3-7 PD3Z284C4V3-7 Diodes Incorporated PD3Z284C2V4-PD3Z284C39.pdf Description: DIODE ZENER 4.3V POWERDI323
Produkt ist nicht verfügbar
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PD3Z284C4V7-7 PD3Z284C4V7-7 Diodes Incorporated PD3Z284C2V4-PD3Z284C39.pdf Description: DIODE ZENER 4.7V POWERDI323
Current - Reverse Leakage @ Vr: 3 µA @ 2 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: PowerDI™ 323
Impedance (Max) (Zzt): 80 Ohms
Voltage - Zener (Nom) (Vz): 4.7 V
Operating Temperature: -65°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: PowerDI™ 323
Tolerance: ±6%
Packaging: Tape & Reel (TR)
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3000+0.27 EUR
6000+0.25 EUR
15000+0.23 EUR
30000+0.22 EUR
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SBR20A200CTB SBR20A200CTB Diodes Incorporated SBR20A200CTB.pdf Description: DIODE ARR SBR 200V 10A TO263AB
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 960 mV @ 20 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: TO-263AB (D2PAK)
Current - Average Rectified (Io) (per Diode): 10A
Diode Configuration: 1 Pair Common Cathode
Technology: Super Barrier
Reverse Recovery Time (trr): 30 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
auf Bestellung 50 Stücke:
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50+1.29 EUR
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SBR2M30P1-7 SBR2M30P1-7 Diodes Incorporated SBR2M30P1.pdf Description: DIODE SBR 30V 2A POWERDI123
Current - Reverse Leakage @ Vr: 200 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 460 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 30 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: PowerDI™ 123
Current - Average Rectified (Io): 2A
Technology: Super Barrier
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
Package / Case: POWERDI®123
auf Bestellung 72000 Stücke:
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3000+0.23 EUR
6000+0.22 EUR
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30000+0.2 EUR
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SBR2U30P1-7 SBR2U30P1-7 Diodes Incorporated SBR2U30P1.pdf Description: DIODE SBR 30V 2A POWERDI123
Current - Reverse Leakage @ Vr: 400 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 400 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 30 V
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: PowerDI™ 123
Current - Average Rectified (Io): 2A
Technology: Super Barrier
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: POWERDI®123
Packaging: Tape & Reel (TR)
auf Bestellung 81000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.23 EUR
6000+0.22 EUR
9000+0.21 EUR
30000+0.2 EUR
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SBR30U30CT SBR30U30CT Diodes Incorporated SBR30U30.pdf Description: DIODE ARRAY SBR 30V 15A TO220AB
Produkt ist nicht verfügbar
 Mindestbestellmenge: 50 Stücke
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SBR3M30P1-7 SBR3M30P1-7 Diodes Incorporated SBR3M30P1.pdf Description: DIODE SBR 30V 3A POWERDI 123
Packaging: Tape & Reel (TR)
Package / Case: POWERDI®123
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 3A
Supplier Device Package: PowerDI™ 123
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
Current - Reverse Leakage @ Vr: 200 µA @ 30 V
auf Bestellung 12000 Stücke:
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6000+0.26 EUR
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SBR3U30P1-7 SBR3U30P1-7 Diodes Incorporated SBR3U30P1.pdf Description: DIODE SBR 30V 3A POWERDI 123
Packaging: Tape & Reel (TR)
Package / Case: POWERDI®123
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 3A
Supplier Device Package: PowerDI™ 123
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 430 mV @ 3 A
Current - Reverse Leakage @ Vr: 400 µA @ 30 V
auf Bestellung 5429 Stücke:
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3000+0.3 EUR
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SBR60A60CT SBR60A60CT Diodes Incorporated SBR60A60CT.pdf Description: DIODE ARR SBR 60V 30A TO220-3
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 30 A
Voltage - DC Reverse (Vr) (Max): 60 V
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: TO-220-3
Current - Average Rectified (Io) (per Diode): 30A
Diode Configuration: 1 Pair Common Cathode
Technology: Super Barrier
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
 Mindestbestellmenge: 50 Stücke
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BC846AS-7 BC846AS-7 Diodes Incorporated ds30833.pdf Description: TRANS 2NPN 65V 100MA SOT-363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: -65°C ~ 150°C (TJ)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 65V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-363
Part Status: Active
auf Bestellung 117944 Stücke:
Lieferzeit 10-14 Tag (e)
29+0.62 EUR
48+0.37 EUR
100+0.24 EUR
500+0.17 EUR
1000+0.16 EUR
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BC847CDLP-7 BC847CDLP-7 Diodes Incorporated ds30817.pdf Description: TRANS 2NPN 45V 0.1A X2-DFN1310-6
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: -65°C ~ 150°C (TJ)
Power - Max: 350mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: X2-DFN1310-6 (Type B)
Part Status: Active
auf Bestellung 18000 Stücke:
Lieferzeit 10-14 Tag (e)
20+0.9 EUR
32+0.56 EUR
100+0.36 EUR
500+0.27 EUR
1000+0.24 EUR
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BC856AS-7 BC856AS-7 Diodes Incorporated BC856AS.pdf Description: TRANS 2PNP 65V 100MA SOT-363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: -65°C ~ 150°C (TJ)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 65V
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-363
Part Status: Active
auf Bestellung 2801 Stücke:
Lieferzeit 10-14 Tag (e)
50+0.35 EUR
82+0.22 EUR
131+0.13 EUR
500+0.099 EUR
1000+0.087 EUR
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BZT52C2V4LP-7 BZT52C2V4LP-7 Diodes Incorporated DS_31_BZT52C2V4LP-BZT52C39LP.pdf Description: DIODE ZENER 2.4V 250MW 2DFN
Packaging: Cut Tape (CT)
Tolerance: ±8%
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 2.4 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: X1-DFN1006-2
Part Status: Active
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 µA @ 1 V
auf Bestellung 607323 Stücke:
Lieferzeit 10-14 Tag (e)
33+0.55 EUR
52+0.34 EUR
100+0.21 EUR
500+0.16 EUR
1000+0.14 EUR
Mindestbestellmenge: 33 Stücke
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BZT52C2V7LP-7 BZT52C2V7LP-7 Diodes Incorporated DS_31_BZT52C2V4LP-BZT52C39LP.pdf Description: DIODE ZENER 2.7V 250MW DFN1006-2
Packaging: Cut Tape (CT)
Tolerance: ±7%
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 2.7 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: DFN1006-2
Part Status: Active
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 20 µA @ 1 V
auf Bestellung 2940 Stücke:
Lieferzeit 10-14 Tag (e)
63+0.28 EUR
118+0.15 EUR
175+0.1 EUR
500+0.098 EUR
Mindestbestellmenge: 63 Stücke
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BZT52C36LP-7 BZT52C36LP-7 Diodes Incorporated DS_31_BZT52C2V4LP-BZT52C39LP.pdf Description: DIODE ZENER 36V 250MW 2DFN
Current - Reverse Leakage @ Vr: 100 nA @ 25.2 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 250 mW
Part Status: Active
Supplier Device Package: X1-DFN1006-2
Impedance (Max) (Zzt): 90 Ohms
Voltage - Zener (Nom) (Vz): 36 V
Operating Temperature: -65°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: 0402 (1006 Metric)
Tolerance: ±6%
Packaging: Cut Tape (CT)
auf Bestellung 4022 Stücke:
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40+0.44 EUR
60+0.29 EUR
124+0.14 EUR
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BZT52C39LP-7 BZT52C39LP-7 Diodes Incorporated DS_31_BZT52C2V4LP-BZT52C39LP.pdf Description: DIODE ZENER 39V 250MW DFN1006-2
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 39 V
Impedance (Max) (Zzt): 130 Ohms
Supplier Device Package: DFN1006-2
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 27.3 V
auf Bestellung 180719 Stücke:
Lieferzeit 10-14 Tag (e)
44+0.4 EUR
66+0.27 EUR
133+0.13 EUR
Mindestbestellmenge: 44 Stücke
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BZT52C3V0LP-7 BZT52C3V0LP-7 Diodes Incorporated DS_31_BZT52C2V4LP-BZT52C39LP.pdf Description: DIODE ZENER 3V 250MW 2DFN
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 250 mW
Part Status: Active
Supplier Device Package: X1-DFN1006-2
Impedance (Max) (Zzt): 95 Ohms
Voltage - Zener (Nom) (Vz): 3 V
Operating Temperature: -65°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: 0402 (1006 Metric)
Tolerance: ±7%
Packaging: Cut Tape (CT)
auf Bestellung 4435 Stücke:
Lieferzeit 10-14 Tag (e)
56+0.32 EUR
82+0.21 EUR
137+0.13 EUR
500+0.12 EUR
Mindestbestellmenge: 56 Stücke
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BZT52C3V3LP-7 BZT52C3V3LP-7 Diodes Incorporated DS_31_BZT52C2V4LP-BZT52C39LP.pdf Description: DIODE ZENER 3.3V 250MW 2DFN
Packaging: Cut Tape (CT)
Tolerance: ±6%
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 3.3 V
Impedance (Max) (Zzt): 95 Ohms
Supplier Device Package: X1-DFN1006-2
Part Status: Active
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
auf Bestellung 645 Stücke:
Lieferzeit 10-14 Tag (e)
24+0.74 EUR
39+0.46 EUR
100+0.29 EUR
500+0.22 EUR
Mindestbestellmenge: 24 Stücke
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BZT52C3V6LP-7 BZT52C3V6LP-7 Diodes Incorporated DS_31_BZT52C2V4LP-BZT52C39LP.pdf Description: DIODE ZENER 3.6V 250MW 2DFN
Packaging: Cut Tape (CT)
Tolerance: ±6%
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 3.6 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: X1-DFN1006-2
Part Status: Active
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BZT52C4V3LP-7 BZT52C4V3LP-7 Diodes Incorporated DS_31_BZT52C2V4LP-BZT52C39LP.pdf Description: DIODE ZENER 4.3V 250MW 2DFN
Current - Reverse Leakage @ Vr: 3 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 250 mW
Part Status: Active
Supplier Device Package: X1-DFN1006-2
Impedance (Max) (Zzt): 90 Ohms
Voltage - Zener (Nom) (Vz): 4.3 V
Operating Temperature: -65°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: 0402 (1006 Metric)
Tolerance: ±7%
Packaging: Cut Tape (CT)
auf Bestellung 2551 Stücke:
Lieferzeit 10-14 Tag (e)
36+0.49 EUR
57+0.31 EUR
117+0.15 EUR
1000+0.13 EUR
Mindestbestellmenge: 36 Stücke
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BZT52C4V7LP-7 BZT52C4V7LP-7 Diodes Incorporated DS_31_BZT52C2V4LP-BZT52C39LP.pdf Description: DIODE ZENER 4.7V 250MW 2DFN
Packaging: Cut Tape (CT)
Tolerance: ±6%
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 4.7 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: X1-DFN1006-2
Part Status: Active
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 3 µA @ 2 V
auf Bestellung 9351 Stücke:
Lieferzeit 10-14 Tag (e)
67+0.26 EUR
105+0.17 EUR
156+0.11 EUR
1000+0.1 EUR
Mindestbestellmenge: 67 Stücke
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DCX100NS-7 DCX100NS-7 Diodes Incorporated DCX100NS_Rev7-4_May2021.pdf Description: TRANS NPN/PNP PREBIAS SOT563
Packaging: Cut Tape (CT)
auf Bestellung 2631 Stücke:
Lieferzeit 10-14 Tag (e)
23+0.79 EUR
29+0.62 EUR
100+0.37 EUR
500+0.34 EUR
1000+0.23 EUR
Mindestbestellmenge: 23 Stücke
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DDC144NS-7 DDC144NS-7 Diodes Incorporated ds30747.pdf Description: TRANS 2NPN PREBIAS 0.2W SOT363
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DDTA144ELP-7 DDTA144ELP-7 Diodes Incorporated ds30844.pdf Description: TRANS PREBIAS PNP 50V 0.2A 3DFN
Qualification: AEC-Q101
Grade: Automotive
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 47 kOhms
Frequency - Transition: 250 MHz
Power - Max: 250 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 200 mA
Supplier Device Package: X1-DFN1006-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 300mA, 5V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 800mV @ 1mA, 40mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: 3-UFDFN
Packaging: Cut Tape (CT)
auf Bestellung 99553 Stücke:
Lieferzeit 10-14 Tag (e)
27+0.67 EUR
40+0.45 EUR
100+0.3 EUR
500+0.23 EUR
Mindestbestellmenge: 27 Stücke
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DDTC114ELP-7 DDTC114ELP-7 Diodes Incorporated ds30945.pdf Description: TRANS PREBIAS NPN 50V 0.1A 3DFN
Current - Collector Cutoff (Max): 1µA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 70mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: 3-UFDFN
Packaging: Cut Tape (CT)
Resistor - Emitter Base (R2): 10 kOhms
Resistor - Base (R1): 10 kOhms
Frequency - Transition: 250 MHz
Power - Max: 250 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: X1-DFN1006-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 5V
auf Bestellung 213000 Stücke:
Lieferzeit 10-14 Tag (e)
25+0.7 EUR
Mindestbestellmenge: 25 Stücke
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BZT52C3V3LP-7 DS_31_BZT52C2V4LP-BZT52C39LP.pdf
BZT52C3V3LP-7
Hersteller: Diodes Incorporated
Description: DIODE ZENER 3.3V 250MW 2DFN
Packaging: Tape & Reel (TR)
Tolerance: ±6%
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 3.3 V
Impedance (Max) (Zzt): 95 Ohms
Supplier Device Package: X1-DFN1006-2
Part Status: Active
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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BZT52C3V6LP-7 DS_31_BZT52C2V4LP-BZT52C39LP.pdf
BZT52C3V6LP-7
Hersteller: Diodes Incorporated
Description: DIODE ZENER 3.6V 250MW 2DFN
Packaging: Tape & Reel (TR)
Tolerance: ±6%
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 3.6 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: X1-DFN1006-2
Part Status: Active
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Produkt ist nicht verfügbar
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BZT52C4V3LP-7 DS_31_BZT52C2V4LP-BZT52C39LP.pdf
BZT52C4V3LP-7
Hersteller: Diodes Incorporated
Description: DIODE ZENER 4.3V 250MW 2DFN
Current - Reverse Leakage @ Vr: 3 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 250 mW
Part Status: Active
Supplier Device Package: X1-DFN1006-2
Impedance (Max) (Zzt): 90 Ohms
Voltage - Zener (Nom) (Vz): 4.3 V
Operating Temperature: -65°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: 0402 (1006 Metric)
Tolerance: ±7%
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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BZT52C4V7LP-7 DS_31_BZT52C2V4LP-BZT52C39LP.pdf
BZT52C4V7LP-7
Hersteller: Diodes Incorporated
Description: DIODE ZENER 4.7V 250MW 2DFN
Packaging: Tape & Reel (TR)
Tolerance: ±6%
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 4.7 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: X1-DFN1006-2
Part Status: Active
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 3 µA @ 2 V
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3000+0.091 EUR
6000+0.089 EUR
9000+0.081 EUR
Mindestbestellmenge: 3000 Stücke
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DDC144NS-7 ds30747.pdf
DDC144NS-7
Hersteller: Diodes Incorporated
Description: TRANS 2NPN PREBIAS 0.2W SOT363
auf Bestellung 33000 Stücke:
Lieferzeit 10-14 Tag (e)
Mindestbestellmenge: 3000 Stücke
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DDTC114ELP-7 ds30945.pdf
DDTC114ELP-7
Hersteller: Diodes Incorporated
Description: TRANS PREBIAS NPN 50V 0.1A 3DFN
Resistor - Emitter Base (R2): 10 kOhms
Resistor - Base (R1): 10 kOhms
Frequency - Transition: 250 MHz
Power - Max: 250 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: X1-DFN1006-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 5V
Current - Collector Cutoff (Max): 1µA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 70mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: 3-UFDFN
Packaging: Tape & Reel (TR)
auf Bestellung 213000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3000+0.15 EUR
Mindestbestellmenge: 3000 Stücke
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DDTC114YLP-7 ds30755.pdf
DDTC114YLP-7
Hersteller: Diodes Incorporated
Description: TRANS PREBIAS NPN 50V 0.1A 3DFN
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: X1-DFN1006-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 50mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: 3-UFDFN
Packaging: Tape & Reel (TR)
Resistors Included: R1 and R2
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 10 kOhms
Frequency - Transition: 250 MHz
Power - Max: 250 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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DMN2004K-7 DMN2004K.pdf
DMN2004K-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 20V 630MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 630mA (Ta)
Rds On (Max) @ Id, Vgs: 550mOhm @ 540mA, 4.5V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 16 V
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3000+0.14 EUR
6000+0.13 EUR
9000+0.12 EUR
Mindestbestellmenge: 3000 Stücke
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DMN2004VK-7 DMN2004VK.pdf
DMN2004VK-7
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 20V 0.54A SOT563
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)
Part Status: Active
Supplier Device Package: SOT-563
Vgs(th) (Max) @ Id: 1V @ 250µA
FET Feature: Logic Level Gate
Rds On (Max) @ Id, Vgs: 550mOhm @ 540mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 16V
Current - Continuous Drain (Id) @ 25°C: 540mA
Drain to Source Voltage (Vdss): 20V
Power - Max: 250mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
auf Bestellung 69000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3000+0.19 EUR
6000+0.17 EUR
9000+0.16 EUR
21000+0.15 EUR
30000+0.14 EUR
Mindestbestellmenge: 3000 Stücke
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DMN2112SN-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 20V 1.2A SC59-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta)
Rds On (Max) @ Id, Vgs: 100mOhm @ 500mA, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 1mA
Supplier Device Package: SC-59-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 10 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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DMN5L06VAK-7 DMN5_L06VK_VAK_010VAK_Rev13_Feb2017.pdf
DMN5L06VAK-7
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 50V 0.28A SOT563
Supplier Device Package: SOT-563
Vgs(th) (Max) @ Id: 1V @ 250µA
FET Feature: Logic Level Gate
Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 280mA
Drain to Source Voltage (Vdss): 50V
Power - Max: 250mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DMP3030SN-7 DMP3030SN.pdf
DMP3030SN-7
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 30V 700MA SC59-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 700mA (Ta)
Rds On (Max) @ Id, Vgs: 250mOhm @ 400mA, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: SC-59-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 160 pF @ 10 V
auf Bestellung 87000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3000+0.17 EUR
6000+0.15 EUR
15000+0.14 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DZT3150-13 ds30785.pdf
DZT3150-13
Hersteller: Diodes Incorporated
Description: TRANS NPN 25V 5A SOT-223
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DZT851-13 ds30738.pdf
DZT851-13
Hersteller: Diodes Incorporated
Description: TRANS NPN 60V 6A SOT223-3
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 6 A
Supplier Device Package: SOT-223-3
Frequency - Transition: 130MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2A, 1V
Current - Collector Cutoff (Max): 50nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 375mV @ 300mA, 6A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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DZT853-13 ds30737.pdf
DZT853-13
Hersteller: Diodes Incorporated
Description: TRANS NPN 100V 6A SOT223-3
Frequency - Transition: 130MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2A, 2V
Current - Collector Cutoff (Max): 10nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 340mV @ 500mA, 5A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 100 V
Current - Collector (Ic) (Max): 6 A
Part Status: Obsolete
Supplier Device Package: SOT-223-3
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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DZT953-13 ds30941.pdf
DZT953-13
Hersteller: Diodes Incorporated
Description: TRANS PNP 100V 5A SOT223-3
Voltage - Collector Emitter Breakdown (Max): 100 V
Current - Collector (Ic) (Max): 5 A
Part Status: Obsolete
Supplier Device Package: SOT-223-3
Frequency - Transition: 125MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 1V
Current - Collector Cutoff (Max): 50nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 420mV @ 400mA, 4A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
Power - Max: 1 W
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
HBDM60V600W-7 HBDM60V600W.pdf
HBDM60V600W-7
Hersteller: Diodes Incorporated
Description: TRANS NPN/PNP 65V/60V SOT363
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V / 100 @ 150mA, 10V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 400mV @ 10mA, 100mA / 500mV @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max): 65V, 60V
Current - Collector (Ic) (Max): 500mA, 600mA
Power - Max: 200mW
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: 1 NPN, 1 PNP
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Supplier Device Package: SOT-363
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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PD3S120L-7 ds30793.pdf
PD3S120L-7
Hersteller: Diodes Incorporated
Description: DIODE SCHOTTK 20V 1A POWERDI 323
Current - Reverse Leakage @ Vr: 160 µA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 420 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 20 V
Operating Temperature - Junction: -65°C ~ 125°C
Supplier Device Package: PowerDI™ 323
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 46pF @ 10V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: PowerDI™ 323
Packaging: Tape & Reel (TR)
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3000+0.26 EUR
6000+0.25 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PD3SD2580-7 ds30720.pdf
PD3SD2580-7
Hersteller: Diodes Incorporated
Description: DIODE GP 80V 250MA POWERDI323
Technology: Standard
Reverse Recovery Time (trr): 4 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: PowerDI™ 323
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 100 nA @ 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Voltage - DC Reverse (Vr) (Max): 80 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: PowerDI™ 323
Current - Average Rectified (Io): 250mA
Capacitance @ Vr, F: 2.3pF @ 0V, 1MHz
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3000+0.15 EUR
6000+0.14 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PD3Z284C13-7 PD3Z284C2V4-PD3Z284C39.pdf
PD3Z284C13-7
Hersteller: Diodes Incorporated
Description: DIODE ZENER 13V 500MW POWERDI323
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PD3Z284C15-7 PD3Z284C2V4-PD3Z284C39.pdf
PD3Z284C15-7
Hersteller: Diodes Incorporated
Description: DIODE ZENER 15V 500MW POWERDI323
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: PowerDI™ 323
Impedance (Max) (Zzt): 15 Ohms
Voltage - Zener (Nom) (Vz): 15 V
Operating Temperature: -65°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: PowerDI™ 323
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 100 nA @ 10.5 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
auf Bestellung 21000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3000+0.22 EUR
6000+0.2 EUR
9000+0.19 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PD3Z284C16-7 PD3Z284C2V4-PD3Z284C39.pdf
PD3Z284C16-7
Hersteller: Diodes Incorporated
Description: DIODE ZENER 16V 500MW POWERDI323
auf Bestellung 42000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3000+0.24 EUR
6000+0.23 EUR
15000+0.21 EUR
30000+0.2 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PD3Z284C20-7 PD3Z284C2V4-PD3Z284C39.pdf
PD3Z284C20-7
Hersteller: Diodes Incorporated
Description: DIODE ZENER 20V 500MW POWERDI323
auf Bestellung 300048000 Stücke:
Lieferzeit 10-14 Tag (e)
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PD3Z284C22-7 PD3Z284C2V4-PD3Z284C39.pdf
PD3Z284C22-7
Hersteller: Diodes Incorporated
Description: DIODE ZENER 22V 500MW POWERDI323
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PD3Z284C24-7 PD3Z284C2V4-PD3Z284C39.pdf
PD3Z284C24-7
Hersteller: Diodes Incorporated
Description: DIODE ZENER 24V 500MW POWERDI323
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PD3Z284C27-7 PD3Z284C2V4-PD3Z284C39.pdf
PD3Z284C27-7
Hersteller: Diodes Incorporated
Description: DIODE ZENER 27V 500MW POWERDI323
auf Bestellung 75000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3000+0.26 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PD3Z284C2V4-7 PD3Z284C2V4-PD3Z284C39.pdf
PD3Z284C2V4-7
Hersteller: Diodes Incorporated
Description: DIODE ZENER 2.4V POWERDI323
auf Bestellung 900069000 Stücke:
Lieferzeit 10-14 Tag (e)
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PD3Z284C2V7-7 PD3Z284C2V4_PD3Z284C39.pdf
PD3Z284C2V7-7
Hersteller: Diodes Incorporated
Description: DIODE ZENER 2.7V 500MW PWRDI323
Packaging: Tape & Reel (TR)
Tolerance: ±7%
Package / Case: PowerDI™ 323
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 2.7 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: PowerDI™ 323
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 20 µA @ 1 V
auf Bestellung 75000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3000+0.2 EUR
15000+0.18 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PD3Z284C30-7 PD3Z284C2V4-PD3Z284C39.pdf
PD3Z284C30-7
Hersteller: Diodes Incorporated
Description: DIODE ZENER 30V 500MW POWERDI323
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PD3Z284C33-7 PD3Z284C2V4-PD3Z284C39.pdf
PD3Z284C33-7
Hersteller: Diodes Incorporated
Description: DIODE ZENER 33V 500MW POWERDI323
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PD3Z284C36-7 PD3Z284C2V4-PD3Z284C39.pdf
PD3Z284C36-7
Hersteller: Diodes Incorporated
Description: DIODE ZENER 36V 500MW POWERDI323
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PD3Z284C39-7 PD3Z284C2V4-PD3Z284C39.pdf
PD3Z284C39-7
Hersteller: Diodes Incorporated
Description: DIODE ZENER 39V 500MW POWERDI323
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PD3Z284C3V0-7 PD3Z284C2V4-PD3Z284C39.pdf
PD3Z284C3V0-7
Hersteller: Diodes Incorporated
Description: DIODE ZENER 3V 500MW POWERDI323
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PD3Z284C3V3-7 PD3Z284C2V4-PD3Z284C39.pdf
PD3Z284C3V3-7
Hersteller: Diodes Incorporated
Description: DIODE ZENER 3.3V POWERDI323
auf Bestellung 300024000 Stücke:
Lieferzeit 10-14 Tag (e)
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PD3Z284C3V6-7 PD3Z284C2V4-PD3Z284C39.pdf
PD3Z284C3V6-7
Hersteller: Diodes Incorporated
Description: DIODE ZENER 3.6V POWERDI323
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PD3Z284C4V3-7 PD3Z284C2V4-PD3Z284C39.pdf
PD3Z284C4V3-7
Hersteller: Diodes Incorporated
Description: DIODE ZENER 4.3V POWERDI323
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PD3Z284C4V7-7 PD3Z284C2V4-PD3Z284C39.pdf
PD3Z284C4V7-7
Hersteller: Diodes Incorporated
Description: DIODE ZENER 4.7V POWERDI323
Current - Reverse Leakage @ Vr: 3 µA @ 2 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: PowerDI™ 323
Impedance (Max) (Zzt): 80 Ohms
Voltage - Zener (Nom) (Vz): 4.7 V
Operating Temperature: -65°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: PowerDI™ 323
Tolerance: ±6%
Packaging: Tape & Reel (TR)
auf Bestellung 33000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3000+0.27 EUR
6000+0.25 EUR
15000+0.23 EUR
30000+0.22 EUR
Mindestbestellmenge: 3000 Stücke
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SBR20A200CTB SBR20A200CTB.pdf
SBR20A200CTB
Hersteller: Diodes Incorporated
Description: DIODE ARR SBR 200V 10A TO263AB
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 960 mV @ 20 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: TO-263AB (D2PAK)
Current - Average Rectified (Io) (per Diode): 10A
Diode Configuration: 1 Pair Common Cathode
Technology: Super Barrier
Reverse Recovery Time (trr): 30 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
auf Bestellung 50 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
8+2.46 EUR
50+1.29 EUR
Mindestbestellmenge: 8 Stücke
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SBR2M30P1-7 SBR2M30P1.pdf
SBR2M30P1-7
Hersteller: Diodes Incorporated
Description: DIODE SBR 30V 2A POWERDI123
Current - Reverse Leakage @ Vr: 200 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 460 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 30 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: PowerDI™ 123
Current - Average Rectified (Io): 2A
Technology: Super Barrier
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
Package / Case: POWERDI®123
auf Bestellung 72000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3000+0.23 EUR
6000+0.22 EUR
9000+0.21 EUR
30000+0.2 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SBR2U30P1-7 SBR2U30P1.pdf
SBR2U30P1-7
Hersteller: Diodes Incorporated
Description: DIODE SBR 30V 2A POWERDI123
Current - Reverse Leakage @ Vr: 400 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 400 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 30 V
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: PowerDI™ 123
Current - Average Rectified (Io): 2A
Technology: Super Barrier
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: POWERDI®123
Packaging: Tape & Reel (TR)
auf Bestellung 81000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3000+0.23 EUR
6000+0.22 EUR
9000+0.21 EUR
30000+0.2 EUR
Mindestbestellmenge: 3000 Stücke
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SBR30U30CT SBR30U30.pdf
SBR30U30CT
Hersteller: Diodes Incorporated
Description: DIODE ARRAY SBR 30V 15A TO220AB
Produkt ist nicht verfügbar
Mindestbestellmenge: 50 Stücke
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SBR3M30P1-7 SBR3M30P1.pdf
SBR3M30P1-7
Hersteller: Diodes Incorporated
Description: DIODE SBR 30V 3A POWERDI 123
Packaging: Tape & Reel (TR)
Package / Case: POWERDI®123
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 3A
Supplier Device Package: PowerDI™ 123
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
Current - Reverse Leakage @ Vr: 200 µA @ 30 V
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3000+0.27 EUR
6000+0.26 EUR
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SBR3U30P1-7 SBR3U30P1.pdf
SBR3U30P1-7
Hersteller: Diodes Incorporated
Description: DIODE SBR 30V 3A POWERDI 123
Packaging: Tape & Reel (TR)
Package / Case: POWERDI®123
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 3A
Supplier Device Package: PowerDI™ 123
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 430 mV @ 3 A
Current - Reverse Leakage @ Vr: 400 µA @ 30 V
auf Bestellung 5429 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3000+0.3 EUR
Mindestbestellmenge: 3000 Stücke
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SBR60A60CT SBR60A60CT.pdf
SBR60A60CT
Hersteller: Diodes Incorporated
Description: DIODE ARR SBR 60V 30A TO220-3
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 30 A
Voltage - DC Reverse (Vr) (Max): 60 V
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: TO-220-3
Current - Average Rectified (Io) (per Diode): 30A
Diode Configuration: 1 Pair Common Cathode
Technology: Super Barrier
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
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BC846AS-7 ds30833.pdf
BC846AS-7
Hersteller: Diodes Incorporated
Description: TRANS 2NPN 65V 100MA SOT-363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: -65°C ~ 150°C (TJ)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 65V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-363
Part Status: Active
auf Bestellung 117944 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
29+0.62 EUR
48+0.37 EUR
100+0.24 EUR
500+0.17 EUR
1000+0.16 EUR
Mindestbestellmenge: 29 Stücke
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BC847CDLP-7 ds30817.pdf
BC847CDLP-7
Hersteller: Diodes Incorporated
Description: TRANS 2NPN 45V 0.1A X2-DFN1310-6
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: -65°C ~ 150°C (TJ)
Power - Max: 350mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: X2-DFN1310-6 (Type B)
Part Status: Active
auf Bestellung 18000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
20+0.9 EUR
32+0.56 EUR
100+0.36 EUR
500+0.27 EUR
1000+0.24 EUR
Mindestbestellmenge: 20 Stücke
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BC856AS-7 BC856AS.pdf
BC856AS-7
Hersteller: Diodes Incorporated
Description: TRANS 2PNP 65V 100MA SOT-363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: -65°C ~ 150°C (TJ)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 65V
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-363
Part Status: Active
auf Bestellung 2801 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
50+0.35 EUR
82+0.22 EUR
131+0.13 EUR
500+0.099 EUR
1000+0.087 EUR
Mindestbestellmenge: 50 Stücke
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BZT52C2V4LP-7 DS_31_BZT52C2V4LP-BZT52C39LP.pdf
BZT52C2V4LP-7
Hersteller: Diodes Incorporated
Description: DIODE ZENER 2.4V 250MW 2DFN
Packaging: Cut Tape (CT)
Tolerance: ±8%
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 2.4 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: X1-DFN1006-2
Part Status: Active
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 µA @ 1 V
auf Bestellung 607323 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
33+0.55 EUR
52+0.34 EUR
100+0.21 EUR
500+0.16 EUR
1000+0.14 EUR
Mindestbestellmenge: 33 Stücke
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BZT52C2V7LP-7 DS_31_BZT52C2V4LP-BZT52C39LP.pdf
BZT52C2V7LP-7
Hersteller: Diodes Incorporated
Description: DIODE ZENER 2.7V 250MW DFN1006-2
Packaging: Cut Tape (CT)
Tolerance: ±7%
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 2.7 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: DFN1006-2
Part Status: Active
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 20 µA @ 1 V
auf Bestellung 2940 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
63+0.28 EUR
118+0.15 EUR
175+0.1 EUR
500+0.098 EUR
Mindestbestellmenge: 63 Stücke
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BZT52C36LP-7 DS_31_BZT52C2V4LP-BZT52C39LP.pdf
BZT52C36LP-7
Hersteller: Diodes Incorporated
Description: DIODE ZENER 36V 250MW 2DFN
Current - Reverse Leakage @ Vr: 100 nA @ 25.2 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 250 mW
Part Status: Active
Supplier Device Package: X1-DFN1006-2
Impedance (Max) (Zzt): 90 Ohms
Voltage - Zener (Nom) (Vz): 36 V
Operating Temperature: -65°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: 0402 (1006 Metric)
Tolerance: ±6%
Packaging: Cut Tape (CT)
auf Bestellung 4022 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
40+0.44 EUR
60+0.29 EUR
124+0.14 EUR
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BZT52C39LP-7 DS_31_BZT52C2V4LP-BZT52C39LP.pdf
BZT52C39LP-7
Hersteller: Diodes Incorporated
Description: DIODE ZENER 39V 250MW DFN1006-2
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 39 V
Impedance (Max) (Zzt): 130 Ohms
Supplier Device Package: DFN1006-2
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 27.3 V
auf Bestellung 180719 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
44+0.4 EUR
66+0.27 EUR
133+0.13 EUR
Mindestbestellmenge: 44 Stücke
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BZT52C3V0LP-7 DS_31_BZT52C2V4LP-BZT52C39LP.pdf
BZT52C3V0LP-7
Hersteller: Diodes Incorporated
Description: DIODE ZENER 3V 250MW 2DFN
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 250 mW
Part Status: Active
Supplier Device Package: X1-DFN1006-2
Impedance (Max) (Zzt): 95 Ohms
Voltage - Zener (Nom) (Vz): 3 V
Operating Temperature: -65°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: 0402 (1006 Metric)
Tolerance: ±7%
Packaging: Cut Tape (CT)
auf Bestellung 4435 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
56+0.32 EUR
82+0.21 EUR
137+0.13 EUR
500+0.12 EUR
Mindestbestellmenge: 56 Stücke
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BZT52C3V3LP-7 DS_31_BZT52C2V4LP-BZT52C39LP.pdf
BZT52C3V3LP-7
Hersteller: Diodes Incorporated
Description: DIODE ZENER 3.3V 250MW 2DFN
Packaging: Cut Tape (CT)
Tolerance: ±6%
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 3.3 V
Impedance (Max) (Zzt): 95 Ohms
Supplier Device Package: X1-DFN1006-2
Part Status: Active
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
auf Bestellung 645 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
24+0.74 EUR
39+0.46 EUR
100+0.29 EUR
500+0.22 EUR
Mindestbestellmenge: 24 Stücke
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BZT52C3V6LP-7 DS_31_BZT52C2V4LP-BZT52C39LP.pdf
BZT52C3V6LP-7
Hersteller: Diodes Incorporated
Description: DIODE ZENER 3.6V 250MW 2DFN
Packaging: Cut Tape (CT)
Tolerance: ±6%
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 3.6 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: X1-DFN1006-2
Part Status: Active
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Produkt ist nicht verfügbar
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BZT52C4V3LP-7 DS_31_BZT52C2V4LP-BZT52C39LP.pdf
BZT52C4V3LP-7
Hersteller: Diodes Incorporated
Description: DIODE ZENER 4.3V 250MW 2DFN
Current - Reverse Leakage @ Vr: 3 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 250 mW
Part Status: Active
Supplier Device Package: X1-DFN1006-2
Impedance (Max) (Zzt): 90 Ohms
Voltage - Zener (Nom) (Vz): 4.3 V
Operating Temperature: -65°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: 0402 (1006 Metric)
Tolerance: ±7%
Packaging: Cut Tape (CT)
auf Bestellung 2551 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
36+0.49 EUR
57+0.31 EUR
117+0.15 EUR
1000+0.13 EUR
Mindestbestellmenge: 36 Stücke
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BZT52C4V7LP-7 DS_31_BZT52C2V4LP-BZT52C39LP.pdf
BZT52C4V7LP-7
Hersteller: Diodes Incorporated
Description: DIODE ZENER 4.7V 250MW 2DFN
Packaging: Cut Tape (CT)
Tolerance: ±6%
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 4.7 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: X1-DFN1006-2
Part Status: Active
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 3 µA @ 2 V
auf Bestellung 9351 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
67+0.26 EUR
105+0.17 EUR
156+0.11 EUR
1000+0.1 EUR
Mindestbestellmenge: 67 Stücke
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DCX100NS-7 DCX100NS_Rev7-4_May2021.pdf
DCX100NS-7
Hersteller: Diodes Incorporated
Description: TRANS NPN/PNP PREBIAS SOT563
Packaging: Cut Tape (CT)
auf Bestellung 2631 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
23+0.79 EUR
29+0.62 EUR
100+0.37 EUR
500+0.34 EUR
1000+0.23 EUR
Mindestbestellmenge: 23 Stücke
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DDC144NS-7 ds30747.pdf
DDC144NS-7
Hersteller: Diodes Incorporated
Description: TRANS 2NPN PREBIAS 0.2W SOT363
Produkt ist nicht verfügbar
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DDTA144ELP-7 ds30844.pdf
DDTA144ELP-7
Hersteller: Diodes Incorporated
Description: TRANS PREBIAS PNP 50V 0.2A 3DFN
Qualification: AEC-Q101
Grade: Automotive
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 47 kOhms
Frequency - Transition: 250 MHz
Power - Max: 250 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 200 mA
Supplier Device Package: X1-DFN1006-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 300mA, 5V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 800mV @ 1mA, 40mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: 3-UFDFN
Packaging: Cut Tape (CT)
auf Bestellung 99553 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
27+0.67 EUR
40+0.45 EUR
100+0.3 EUR
500+0.23 EUR
Mindestbestellmenge: 27 Stücke
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DDTC114ELP-7 ds30945.pdf
DDTC114ELP-7
Hersteller: Diodes Incorporated
Description: TRANS PREBIAS NPN 50V 0.1A 3DFN
Current - Collector Cutoff (Max): 1µA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 70mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: 3-UFDFN
Packaging: Cut Tape (CT)
Resistor - Emitter Base (R2): 10 kOhms
Resistor - Base (R1): 10 kOhms
Frequency - Transition: 250 MHz
Power - Max: 250 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: X1-DFN1006-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 5V
auf Bestellung 213000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
25+0.7 EUR
Mindestbestellmenge: 25 Stücke
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