Produkte > DIODES INCORPORATED > Alle Produkte des Herstellers DIODES INCORPORATED (73220) > Seite 202 nach 1221
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APX803-29SAG-7 | Diodes Incorporated |
Description: IC SUPERVISOR 1 CHANNEL SOT23-3Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Output: Open Drain or Open Collector Type: Simple Reset/Power-On Reset Reset: Active Low Operating Temperature: -40°C ~ 85°C (TA) Number of Voltages Monitored: 1 Reset Timeout: 140ms Minimum Voltage - Threshold: 2.93V Supplier Device Package: SOT-23-3 Part Status: Not For New Designs DigiKey Programmable: Not Verified |
auf Bestellung 5532 Stücke: Lieferzeit 10-14 Tag (e) |
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APX803-23SRG-7 | Diodes Incorporated |
Description: IC SUPERVISOR 1 CHANNEL SOT23RDigiKey Programmable: Not Verified Part Status: Not For New Designs Supplier Device Package: SOT23R Voltage - Threshold: 2.25V Reset Timeout: 140ms Minimum Number of Voltages Monitored: 1 Operating Temperature: -40°C ~ 85°C (TA) Reset: Active Low Type: Simple Reset/Power-On Reset Output: Open Drain or Open Collector Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) |
auf Bestellung 197 Stücke: Lieferzeit 10-14 Tag (e) |
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APX803-29SAG-7 | Diodes Incorporated |
Description: IC SUPERVISOR 1 CHANNEL SOT23-3DigiKey Programmable: Not Verified Part Status: Not For New Designs Supplier Device Package: SOT-23-3 Voltage - Threshold: 2.93V Reset Timeout: 140ms Minimum Number of Voltages Monitored: 1 Operating Temperature: -40°C ~ 85°C (TA) Reset: Active Low Type: Simple Reset/Power-On Reset Output: Open Drain or Open Collector Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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APX803-31SAG-7 | Diodes Incorporated |
Description: IC SUPERVISOR 1 CHANNEL SOT23-3Part Status: Not For New Designs Supplier Device Package: SOT-23-3 Voltage - Threshold: 3.08V Reset Timeout: 140ms Minimum Number of Voltages Monitored: 1 Operating Temperature: -40°C ~ 85°C (TA) Reset: Active Low Type: Simple Reset/Power-On Reset Output: Open Drain or Open Collector Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) DigiKey Programmable: Not Verified |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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APX803-40SAG-7 | Diodes Incorporated |
Description: IC SUPERVISOR 1 CHANNEL SOT23-3Part Status: Not For New Designs Supplier Device Package: SOT-23-3 Voltage - Threshold: 4V Reset Timeout: 140ms Minimum Number of Voltages Monitored: 1 Operating Temperature: -40°C ~ 85°C (TA) Reset: Active Low Type: Simple Reset/Power-On Reset Output: Open Drain or Open Collector Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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APX803-40SRG-7 | Diodes Incorporated |
Description: IC SUPERVISOR 1 CHANNEL SOT23RDigiKey Programmable: Not Verified Voltage - Threshold: 4V Reset Timeout: 140ms Minimum Number of Voltages Monitored: 1 Operating Temperature: -40°C ~ 85°C (TA) Reset: Active Low Type: Simple Reset/Power-On Reset Output: Open Drain or Open Collector Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) Part Status: Active Supplier Device Package: SOT23R |
auf Bestellung 15000 Stücke: Lieferzeit 10-14 Tag (e) |
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APX803-44SAG-7 | Diodes Incorporated |
Description: IC SUPERVISOR 1 CHANNEL SOT23-3DigiKey Programmable: Not Verified Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) Part Status: Not For New Designs Supplier Device Package: SOT-23-3 Voltage - Threshold: 4.38V Reset Timeout: 140ms Minimum Number of Voltages Monitored: 1 Operating Temperature: -40°C ~ 85°C (TA) Reset: Active Low Type: Simple Reset/Power-On Reset Output: Open Drain or Open Collector |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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DXT2012P5-13 | Diodes Incorporated |
Description: TRANS PNP 60V 5.5A POWERDI 5Power - Max: 3.2 W Voltage - Collector Emitter Breakdown (Max): 60 V Current - Collector (Ic) (Max): 5.5 A Supplier Device Package: PowerDI™ 5 Frequency - Transition: 120MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2A, 1V Current - Collector Cutoff (Max): 20nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 250mV @ 500mA, 5A Operating Temperature: -55°C ~ 150°C (TJ) Transistor Type: PNP Mounting Type: Surface Mount Package / Case: PowerDI™ 5 Packaging: Tape & Reel (TR) |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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DXT2013P5-13 | Diodes Incorporated |
Description: TRANS PNP 100V 5A POWERDI 5Power - Max: 3.2 W Voltage - Collector Emitter Breakdown (Max): 100 V Current - Collector (Ic) (Max): 5 A Supplier Device Package: PowerDI™ 5 Frequency - Transition: 125MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 1V Current - Collector Cutoff (Max): 20nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 340mV @ 400mA, 4A Operating Temperature: -55°C ~ 150°C (TJ) Transistor Type: PNP Mounting Type: Surface Mount Package / Case: PowerDI™ 5 Packaging: Tape & Reel (TR) |
auf Bestellung 200000 Stücke: Lieferzeit 10-14 Tag (e) |
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DXT2014P5-13 | Diodes Incorporated |
Description: TRANS PNP 140V 4A POWERDI 5Power - Max: 3.2 W Voltage - Collector Emitter Breakdown (Max): 140 V Current - Collector (Ic) (Max): 4 A Supplier Device Package: PowerDI™ 5 Frequency - Transition: 120MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 5V Current - Collector Cutoff (Max): 20nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 360mV @ 300mA, 3A Operating Temperature: -55°C ~ 150°C (TJ) Transistor Type: PNP Mounting Type: Surface Mount Package / Case: PowerDI™ 5 Packaging: Tape & Reel (TR) |
auf Bestellung 200000 Stücke: Lieferzeit 10-14 Tag (e) |
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DXT458P5-13 | Diodes Incorporated |
Description: TRANS NPN 400V 0.3A POWERDI 5Power - Max: 2.8 W Voltage - Collector Emitter Breakdown (Max): 400 V Current - Collector (Ic) (Max): 300 mA Part Status: Active Supplier Device Package: PowerDI™ 5 Frequency - Transition: 50MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 10V Current - Collector Cutoff (Max): 100nA Vce Saturation (Max) @ Ib, Ic: 500mV @ 6mA, 50mA Operating Temperature: -55°C ~ 150°C (TJ) Transistor Type: NPN Mounting Type: Surface Mount Package / Case: PowerDI™ 5 Packaging: Tape & Reel (TR) |
auf Bestellung 385000 Stücke: Lieferzeit 10-14 Tag (e) |
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DXT5551P5-13 | Diodes Incorporated |
Description: TRANS NPN 160V 0.6A POWERDI 5Packaging: Tape & Reel (TR) Package / Case: PowerDI™ 5 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Frequency - Transition: 130MHz Supplier Device Package: PowerDI™ 5 Part Status: Active Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 160 V Power - Max: 2.25 W |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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DXT690BP5-13 | Diodes Incorporated |
Description: TRANS NPN 45V 3A POWERDI 5Packaging: Tape & Reel (TR) Package / Case: PowerDI™ 5 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 350mV @ 150mA, 3A Current - Collector Cutoff (Max): 20nA DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 2A, 2V Frequency - Transition: 150MHz Supplier Device Package: PowerDI™ 5 Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 740 mW |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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DXT790AP5-13 | Diodes Incorporated |
Description: TRANS PNP 40V 3A POWERDI5Power - Max: 3.2 W Voltage - Collector Emitter Breakdown (Max): 40 V Current - Collector (Ic) (Max): 3 A Part Status: Active Supplier Device Package: PowerDI™ 5 Frequency - Transition: 100MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 10mA, 2V Current - Collector Cutoff (Max): 20nA Vce Saturation (Max) @ Ib, Ic: 450mV @ 300mA, 3A Operating Temperature: -55°C ~ 150°C (TJ) Transistor Type: PNP Mounting Type: Surface Mount Package / Case: PowerDI™ 5 Packaging: Tape & Reel (TR) |
auf Bestellung 100000 Stücke: Lieferzeit 10-14 Tag (e) |
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ZXMP6A17N8TC | Diodes Incorporated |
Description: MOSFET P-CH 60V 2.7A 8SOInput Capacitance (Ciss) (Max) @ Vds: 637 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 17.7 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: 8-SO Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 1.56W (Ta) Rds On (Max) @ Id, Vgs: 125mOhm @ 2.3A, 10V Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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DMN6068SE-13 | Diodes Incorporated |
Description: MOSFET N-CH 60V 4.1A SOT223Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta) Rds On (Max) @ Id, Vgs: 68mOhm @ 12A, 10V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-223-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 10.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 502 pF @ 30 V |
auf Bestellung 48000 Stücke: Lieferzeit 10-14 Tag (e) |
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ZXTN617MATA | Diodes Incorporated |
Description: TRANS NPN 15V 4.5A DFN2020B-3Voltage - Collector Emitter Breakdown (Max): 15 V Current - Collector (Ic) (Max): 4.5 A Part Status: Active Supplier Device Package: DFN2020B-3 Frequency - Transition: 120MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 3A, 2V Current - Collector Cutoff (Max): 25nA Vce Saturation (Max) @ Ib, Ic: 280mV @ 50mA, 4.5A Operating Temperature: -55°C ~ 150°C (TJ) Transistor Type: NPN Mounting Type: Surface Mount Package / Case: 3-UDFN Packaging: Tape & Reel (TR) Power - Max: 1.5 W |
auf Bestellung 9000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN6068SE-13 | Diodes Incorporated |
Description: MOSFET N-CH 60V 4.1A SOT223Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta) Rds On (Max) @ Id, Vgs: 68mOhm @ 12A, 10V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-223-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 10.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 502 pF @ 30 V |
auf Bestellung 49517 Stücke: Lieferzeit 10-14 Tag (e) |
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DXT2012P5-13 | Diodes Incorporated |
Description: TRANS PNP 60V 5.5A POWERDI 5Power - Max: 3.2 W Voltage - Collector Emitter Breakdown (Max): 60 V Current - Collector (Ic) (Max): 5.5 A Supplier Device Package: PowerDI™ 5 Frequency - Transition: 120MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2A, 1V Current - Collector Cutoff (Max): 20nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 250mV @ 500mA, 5A Operating Temperature: -55°C ~ 150°C (TJ) Transistor Type: PNP Mounting Type: Surface Mount Package / Case: PowerDI™ 5 Packaging: Cut Tape (CT) |
auf Bestellung 5164 Stücke: Lieferzeit 10-14 Tag (e) |
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DXT2013P5-13 | Diodes Incorporated |
Description: TRANS PNP 100V 5A POWERDI 5Power - Max: 3.2 W Voltage - Collector Emitter Breakdown (Max): 100 V Current - Collector (Ic) (Max): 5 A Supplier Device Package: PowerDI™ 5 Frequency - Transition: 125MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 1V Current - Collector Cutoff (Max): 20nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 340mV @ 400mA, 4A Operating Temperature: -55°C ~ 150°C (TJ) Transistor Type: PNP Mounting Type: Surface Mount Package / Case: PowerDI™ 5 Packaging: Cut Tape (CT) |
auf Bestellung 204295 Stücke: Lieferzeit 10-14 Tag (e) |
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DXT2014P5-13 | Diodes Incorporated |
Description: TRANS PNP 140V 4A POWERDI 5Power - Max: 3.2 W Voltage - Collector Emitter Breakdown (Max): 140 V Current - Collector (Ic) (Max): 4 A Supplier Device Package: PowerDI™ 5 Frequency - Transition: 120MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 5V Current - Collector Cutoff (Max): 20nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 360mV @ 300mA, 3A Operating Temperature: -55°C ~ 150°C (TJ) Transistor Type: PNP Mounting Type: Surface Mount Package / Case: PowerDI™ 5 Packaging: Cut Tape (CT) |
auf Bestellung 206689 Stücke: Lieferzeit 10-14 Tag (e) |
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DXT458P5-13 | Diodes Incorporated |
Description: TRANS NPN 400V 0.3A POWERDI 5Power - Max: 2.8 W Voltage - Collector Emitter Breakdown (Max): 400 V Current - Collector (Ic) (Max): 300 mA Part Status: Active Supplier Device Package: PowerDI™ 5 Frequency - Transition: 50MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 10V Current - Collector Cutoff (Max): 100nA Vce Saturation (Max) @ Ib, Ic: 500mV @ 6mA, 50mA Operating Temperature: -55°C ~ 150°C (TJ) Transistor Type: NPN Mounting Type: Surface Mount Package / Case: PowerDI™ 5 Packaging: Cut Tape (CT) |
auf Bestellung 388585 Stücke: Lieferzeit 10-14 Tag (e) |
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DXT5551P5-13 | Diodes Incorporated |
Description: TRANS NPN 160V 0.6A POWERDI 5Packaging: Cut Tape (CT) Package / Case: PowerDI™ 5 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Frequency - Transition: 130MHz Supplier Device Package: PowerDI™ 5 Part Status: Active Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 160 V Power - Max: 2.25 W |
auf Bestellung 3802 Stücke: Lieferzeit 10-14 Tag (e) |
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DXT690BP5-13 | Diodes Incorporated |
Description: TRANS NPN 45V 3A POWERDI 5Packaging: Cut Tape (CT) Package / Case: PowerDI™ 5 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 350mV @ 150mA, 3A Current - Collector Cutoff (Max): 20nA DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 2A, 2V Frequency - Transition: 150MHz Supplier Device Package: PowerDI™ 5 Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 740 mW |
auf Bestellung 336 Stücke: Lieferzeit 10-14 Tag (e) |
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DXT790AP5-13 | Diodes Incorporated |
Description: TRANS PNP 40V 3A POWERDI5Power - Max: 3.2 W Voltage - Collector Emitter Breakdown (Max): 40 V Current - Collector (Ic) (Max): 3 A Part Status: Active Supplier Device Package: PowerDI™ 5 Frequency - Transition: 100MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 10mA, 2V Current - Collector Cutoff (Max): 20nA Vce Saturation (Max) @ Ib, Ic: 450mV @ 300mA, 3A Operating Temperature: -55°C ~ 150°C (TJ) Transistor Type: PNP Mounting Type: Surface Mount Package / Case: PowerDI™ 5 Packaging: Cut Tape (CT) |
auf Bestellung 107449 Stücke: Lieferzeit 10-14 Tag (e) |
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ZXMP6A17N8TC | Diodes Incorporated |
Description: MOSFET P-CH 60V 2.7A 8SOInput Capacitance (Ciss) (Max) @ Vds: 637 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 17.7 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: 8-SO Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 1.56W (Ta) Rds On (Max) @ Id, Vgs: 125mOhm @ 2.3A, 10V Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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ZXTN617MATA | Diodes Incorporated |
Description: TRANS NPN 15V 4.5A DFN2020B-3Power - Max: 1.5 W Voltage - Collector Emitter Breakdown (Max): 15 V Current - Collector (Ic) (Max): 4.5 A Part Status: Active Supplier Device Package: DFN2020B-3 Frequency - Transition: 120MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 3A, 2V Current - Collector Cutoff (Max): 25nA Vce Saturation (Max) @ Ib, Ic: 280mV @ 50mA, 4.5A Operating Temperature: -55°C ~ 150°C (TJ) Transistor Type: NPN Mounting Type: Surface Mount Package / Case: 3-UDFN Packaging: Cut Tape (CT) |
auf Bestellung 10221 Stücke: Lieferzeit 10-14 Tag (e) |
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ZXTN618MATA | Diodes Incorporated |
Description: TRANS NPN 20V 4.5A DFN2020B-3Current - Collector (Ic) (Max): 4.5 A Part Status: Active Supplier Device Package: DFN2020B-3 Frequency - Transition: 140MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2A, 2V Current - Collector Cutoff (Max): 25nA Vce Saturation (Max) @ Ib, Ic: 270mV @ 125mA, 4.5A Operating Temperature: -55°C ~ 150°C (TJ) Transistor Type: NPN Mounting Type: Surface Mount Package / Case: 3-UDFN Packaging: Tape & Reel (TR) Power - Max: 1.5 W Voltage - Collector Emitter Breakdown (Max): 20 V |
auf Bestellung 267000 Stücke: Lieferzeit 10-14 Tag (e) |
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ZXTN619MATA | Diodes Incorporated |
Description: TRANS NPN 50V 4A DFN2020B-3Packaging: Tape & Reel (TR) Package / Case: 3-UDFN Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 320mV @ 200mA, 4A Current - Collector Cutoff (Max): 25nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2A, 2V Frequency - Transition: 165MHz Supplier Device Package: DFN2020B-3 Part Status: Active Current - Collector (Ic) (Max): 4 A Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 3 W |
auf Bestellung 78000 Stücke: Lieferzeit 10-14 Tag (e) |
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ZXTN620MATA | Diodes Incorporated |
Description: TRANS NPN 80V 3.5A DFN2020B-3Power - Max: 3 W Voltage - Collector Emitter Breakdown (Max): 80 V Current - Collector (Ic) (Max): 3.5 A Supplier Device Package: DFN2020B-3 Frequency - Transition: 160MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 200mA, 2V Current - Collector Cutoff (Max): 25nA Vce Saturation (Max) @ Ib, Ic: 325mV @ 300mA, 3.5A Operating Temperature: -55°C ~ 150°C (TJ) Transistor Type: NPN Mounting Type: Surface Mount Package / Case: 3-UDFN Packaging: Tape & Reel (TR) |
auf Bestellung 18000 Stücke: Lieferzeit 10-14 Tag (e) |
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ZXTP718MATA | Diodes Incorporated |
Description: TRANS PNP 20V 3.5A DFN2020B-3Packaging: Tape & Reel (TR) Package / Case: 3-UDFN Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 350mA, 3.5A Current - Collector Cutoff (Max): 25nA DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 2A, 2V Frequency - Transition: 180MHz Supplier Device Package: DFN2020B-3 Current - Collector (Ic) (Max): 3.5 A Voltage - Collector Emitter Breakdown (Max): 20 V Power - Max: 3 W |
auf Bestellung 27000 Stücke: Lieferzeit 10-14 Tag (e) |
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ZXTP720MATA | Diodes Incorporated |
Description: TRANS PNP 40V 3A DFN2020B-3Packaging: Tape & Reel (TR) Package / Case: 3-UDFN Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 370mV @ 250mA, 2.5A Current - Collector Cutoff (Max): 25nA DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 1.5A, 2V Frequency - Transition: 190MHz Supplier Device Package: DFN2020B-3 Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 3 W |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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ZXTP722MATA | Diodes Incorporated |
Description: TRANS PNP 70V 2.5A DFN2020B-3Power - Max: 3 W Voltage - Collector Emitter Breakdown (Max): 70 V Current - Collector (Ic) (Max): 2.5 A Supplier Device Package: DFN2020B-3 Frequency - Transition: 180MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1.5A, 5V Current - Collector Cutoff (Max): 25nA Vce Saturation (Max) @ Ib, Ic: 260mV @ 200mA, 1.5A Operating Temperature: -55°C ~ 150°C (TJ) Transistor Type: PNP Mounting Type: Surface Mount Package / Case: 3-UDFN Packaging: Tape & Reel (TR) |
auf Bestellung 888000 Stücke: Lieferzeit 10-14 Tag (e) |
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ZXTP749FTA | Diodes Incorporated |
Description: TRANS PNP 25V 3A SOT-23-3Power - Max: 725 mW Voltage - Collector Emitter Breakdown (Max): 25 V Current - Collector (Ic) (Max): 3 A Supplier Device Package: SOT-23-3 DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V Current - Collector Cutoff (Max): 50nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 350mV @ 300mA, 3A Operating Temperature: -55°C ~ 150°C (TJ) Transistor Type: PNP Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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DXTP19020DP5-13 | Diodes Incorporated |
Description: TRANS PNP 20V 8A POWERDI 5Power - Max: 3 W Voltage - Collector Emitter Breakdown (Max): 20 V Current - Collector (Ic) (Max): 8 A Part Status: Active Supplier Device Package: PowerDI™ 5 Frequency - Transition: 176MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 2V Current - Collector Cutoff (Max): 50nA (ICBO) Operating Temperature: -55°C ~ 150°C (TJ) Transistor Type: PNP Mounting Type: Surface Mount Package / Case: PowerDI™ 5 Packaging: Tape & Reel (TR) Vce Saturation (Max) @ Ib, Ic: 275mV @ 800mA, 8A |
auf Bestellung 55000 Stücke: Lieferzeit 10-14 Tag (e) |
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DXTP19020DP5-13 | Diodes Incorporated |
Description: TRANS PNP 20V 8A POWERDI 5Power - Max: 3 W Voltage - Collector Emitter Breakdown (Max): 20 V Current - Collector (Ic) (Max): 8 A Part Status: Active Frequency - Transition: 176MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 2V Current - Collector Cutoff (Max): 50nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 275mV @ 800mA, 8A Operating Temperature: -55°C ~ 150°C (TJ) Transistor Type: PNP Mounting Type: Surface Mount Package / Case: PowerDI™ 5 Packaging: Cut Tape (CT) Supplier Device Package: PowerDI™ 5 |
auf Bestellung 58833 Stücke: Lieferzeit 10-14 Tag (e) |
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ZXTN618MATA | Diodes Incorporated |
Description: TRANS NPN 20V 4.5A DFN2020B-3Power - Max: 1.5 W Voltage - Collector Emitter Breakdown (Max): 20 V Current - Collector (Ic) (Max): 4.5 A Part Status: Active Supplier Device Package: DFN2020B-3 Frequency - Transition: 140MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2A, 2V Current - Collector Cutoff (Max): 25nA Vce Saturation (Max) @ Ib, Ic: 270mV @ 125mA, 4.5A Operating Temperature: -55°C ~ 150°C (TJ) Transistor Type: NPN Mounting Type: Surface Mount Package / Case: 3-UDFN Packaging: Cut Tape (CT) |
auf Bestellung 269984 Stücke: Lieferzeit 10-14 Tag (e) |
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ZXTN619MATA | Diodes Incorporated |
Description: TRANS NPN 50V 4A DFN2020B-3Packaging: Cut Tape (CT) Package / Case: 3-UDFN Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 320mV @ 200mA, 4A Current - Collector Cutoff (Max): 25nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2A, 2V Frequency - Transition: 165MHz Supplier Device Package: DFN2020B-3 Part Status: Active Current - Collector (Ic) (Max): 4 A Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 3 W |
auf Bestellung 80455 Stücke: Lieferzeit 10-14 Tag (e) |
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ZXTN620MATA | Diodes Incorporated |
Description: TRANS NPN 80V 3.5A DFN2020B-3Package / Case: 3-UDFN Packaging: Cut Tape (CT) Power - Max: 3 W Voltage - Collector Emitter Breakdown (Max): 80 V Current - Collector (Ic) (Max): 3.5 A Supplier Device Package: DFN2020B-3 Frequency - Transition: 160MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 200mA, 2V Current - Collector Cutoff (Max): 25nA Vce Saturation (Max) @ Ib, Ic: 325mV @ 300mA, 3.5A Operating Temperature: -55°C ~ 150°C (TJ) Transistor Type: NPN Mounting Type: Surface Mount |
auf Bestellung 20872 Stücke: Lieferzeit 10-14 Tag (e) |
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ZXTP718MATA | Diodes Incorporated |
Description: TRANS PNP 20V 3.5A DFN2020B-3Packaging: Cut Tape (CT) Package / Case: 3-UDFN Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 350mA, 3.5A Current - Collector Cutoff (Max): 25nA DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 2A, 2V Frequency - Transition: 180MHz Supplier Device Package: DFN2020B-3 Current - Collector (Ic) (Max): 3.5 A Voltage - Collector Emitter Breakdown (Max): 20 V Power - Max: 3 W |
auf Bestellung 29638 Stücke: Lieferzeit 10-14 Tag (e) |
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ZXTP722MATA | Diodes Incorporated |
Description: TRANS PNP 70V 2.5A DFN2020B-3Power - Max: 3 W Voltage - Collector Emitter Breakdown (Max): 70 V Current - Collector (Ic) (Max): 2.5 A Supplier Device Package: DFN2020B-3 Frequency - Transition: 180MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1.5A, 5V Current - Collector Cutoff (Max): 25nA Vce Saturation (Max) @ Ib, Ic: 260mV @ 200mA, 1.5A Operating Temperature: -55°C ~ 150°C (TJ) Transistor Type: PNP Mounting Type: Surface Mount Package / Case: 3-UDFN Packaging: Cut Tape (CT) |
auf Bestellung 890022 Stücke: Lieferzeit 10-14 Tag (e) |
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ZXTP720MATA | Diodes Incorporated |
Description: TRANS PNP 40V 3A DFN2020B-3Packaging: Cut Tape (CT) Package / Case: 3-UDFN Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 370mV @ 250mA, 2.5A Current - Collector Cutoff (Max): 25nA DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 1.5A, 2V Frequency - Transition: 190MHz Supplier Device Package: DFN2020B-3 Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 3 W |
auf Bestellung 9401 Stücke: Lieferzeit 10-14 Tag (e) |
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ZXTP749FTA | Diodes Incorporated |
Description: TRANS PNP 25V 3A SOT-23-3Power - Max: 725 mW Voltage - Collector Emitter Breakdown (Max): 25 V Current - Collector (Ic) (Max): 3 A Supplier Device Package: SOT-23-3 DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V Current - Collector Cutoff (Max): 50nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 350mV @ 300mA, 3A Operating Temperature: -55°C ~ 150°C (TJ) Transistor Type: PNP Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) |
auf Bestellung 5744 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN4027SSS-13 | Diodes Incorporated |
Description: MOSFET N-CH 40V 6A 8SO |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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DMN4034SSD-13 | Diodes Incorporated |
Description: MOSFET 2N-CH 40V 4.8A 8SOPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.8W Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 4.8A Input Capacitance (Ciss) (Max) @ Vds: 453pF @ 20V Rds On (Max) @ Id, Vgs: 34mOhm @ 6A, 10V Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SO Part Status: Active |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN4034SSS-13 | Diodes Incorporated |
Description: MOSFET N-CH 40V 5.4A 8SOPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta) Rds On (Max) @ Id, Vgs: 34mOhm @ 6A, 10V Power Dissipation (Max): 1.56W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SO Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 453 pF @ 20 V |
auf Bestellung 60000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN6066SSD-13 | Diodes Incorporated |
Description: MOSFET 2N-CH 60V 3.3A 8SOPart Status: Active Supplier Device Package: 8-SO Vgs(th) (Max) @ Id: 3V @ 250µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 10.3nC @ 10V Rds On (Max) @ Id, Vgs: 66mOhm @ 4.5A, 10V Input Capacitance (Ciss) (Max) @ Vds: 502pF @ 30V Current - Continuous Drain (Id) @ 25°C: 3.3A Drain to Source Voltage (Vdss): 60V Power - Max: 1.8W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) |
auf Bestellung 22500 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN6066SSS-13 | Diodes Incorporated |
Description: MOSFET N-CH 60V 3.7A 8SOPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta) Rds On (Max) @ Id, Vgs: 66mOhm @ 4.5A, 10V Power Dissipation (Max): 1.56W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SO Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 10.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 502 pF @ 30 V |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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DMP4050SSD-13 | Diodes Incorporated |
Description: MOSFET 2P-CH 40V 4A 8SOPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.8W Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 4A Input Capacitance (Ciss) (Max) @ Vds: 674pF @ 20V Rds On (Max) @ Id, Vgs: 50mOhm @ 6A, 10V Gate Charge (Qg) (Max) @ Vgs: 13.9nC @ 10V Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SO Part Status: Active |
auf Bestellung 47500 Stücke: Lieferzeit 10-14 Tag (e) |
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DMP4050SSS-13 | Diodes Incorporated |
Description: MOSFET P-CH 40V 4.4A 8SOPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta) Rds On (Max) @ Id, Vgs: 50mOhm @ 6A, 10V Power Dissipation (Max): 1.56W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SO Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 13.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 674 pF @ 20 V |
auf Bestellung 25000 Stücke: Lieferzeit 10-14 Tag (e) |
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DXT2010P5-13 | Diodes Incorporated |
Description: TRANS NPN 60V 6A POWERDI 5Packaging: Tape & Reel (TR) Package / Case: PowerDI™ 5 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 260mV @ 300mA, 6A Current - Collector Cutoff (Max): 20nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2A, 1V Frequency - Transition: 130MHz Supplier Device Package: PowerDI™ 5 Current - Collector (Ic) (Max): 6 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 3.2 W |
auf Bestellung 30000 Stücke: Lieferzeit 10-14 Tag (e) |
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DXT2011P5-13 | Diodes Incorporated |
Description: TRANS NPN 100V 6A POWERDI 5Packaging: Tape & Reel (TR) Package / Case: PowerDI™ 5 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 220mV @ 500mA, 5A Current - Collector Cutoff (Max): 20nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2A, 2V Frequency - Transition: 130MHz Supplier Device Package: PowerDI™ 5 Part Status: Active Current - Collector (Ic) (Max): 6 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 3.2 W |
auf Bestellung 25000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN4027SSS-13 | Diodes Incorporated |
Description: MOSFET N-CH 40V 6A 8SO |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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DMN4027SSS-13 | Diodes Incorporated |
Description: MOSFET N-CH 40V 6A 8SO |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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DMN4034SSD-13 | Diodes Incorporated |
Description: MOSFET 2N-CH 40V 4.8A 8SOFET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V Rds On (Max) @ Id, Vgs: 34mOhm @ 6A, 10V Input Capacitance (Ciss) (Max) @ Vds: 453pF @ 20V Current - Continuous Drain (Id) @ 25°C: 4.8A Drain to Source Voltage (Vdss): 40V Power - Max: 1.8W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) Part Status: Active Supplier Device Package: 8-SO Vgs(th) (Max) @ Id: 3V @ 250µA |
auf Bestellung 4127 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN4034SSS-13 | Diodes Incorporated |
Description: MOSFET N-CH 40V 5.4A 8SOInput Capacitance (Ciss) (Max) @ Vds: 453 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 8-SO Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 1.56W (Ta) Rds On (Max) @ Id, Vgs: 34mOhm @ 6A, 10V Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) |
auf Bestellung 62930 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN6066SSD-13 | Diodes Incorporated |
Description: MOSFET 2N-CH 60V 3.3A 8SOPart Status: Active Supplier Device Package: 8-SO Vgs(th) (Max) @ Id: 3V @ 250µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 10.3nC @ 10V Rds On (Max) @ Id, Vgs: 66mOhm @ 4.5A, 10V Input Capacitance (Ciss) (Max) @ Vds: 502pF @ 30V Current - Continuous Drain (Id) @ 25°C: 3.3A Drain to Source Voltage (Vdss): 60V Power - Max: 1.8W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) |
auf Bestellung 24979 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN6066SSS-13 | Diodes Incorporated |
Description: MOSFET N-CH 60V 3.7A 8SOGate Charge (Qg) (Max) @ Vgs: 10.3 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: 8-SO Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 1.56W (Ta) Rds On (Max) @ Id, Vgs: 66mOhm @ 4.5A, 10V Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 502 pF @ 30 V |
auf Bestellung 4633 Stücke: Lieferzeit 10-14 Tag (e) |
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DMP4050SSD-13 | Diodes Incorporated |
Description: MOSFET 2P-CH 40V 4A 8SOPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.8W Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 4A Input Capacitance (Ciss) (Max) @ Vds: 674pF @ 20V Rds On (Max) @ Id, Vgs: 50mOhm @ 6A, 10V Gate Charge (Qg) (Max) @ Vgs: 13.9nC @ 10V Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SO Part Status: Active |
auf Bestellung 48895 Stücke: Lieferzeit 10-14 Tag (e) |
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DMP4050SSS-13 | Diodes Incorporated |
Description: MOSFET P-CH 40V 4.4A 8SOPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta) Rds On (Max) @ Id, Vgs: 50mOhm @ 6A, 10V Power Dissipation (Max): 1.56W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SO Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 13.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 674 pF @ 20 V |
auf Bestellung 27406 Stücke: Lieferzeit 10-14 Tag (e) |
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| APX803-29SAG-7 |
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Hersteller: Diodes Incorporated
Description: IC SUPERVISOR 1 CHANNEL SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Output: Open Drain or Open Collector
Type: Simple Reset/Power-On Reset
Reset: Active Low
Operating Temperature: -40°C ~ 85°C (TA)
Number of Voltages Monitored: 1
Reset Timeout: 140ms Minimum
Voltage - Threshold: 2.93V
Supplier Device Package: SOT-23-3
Part Status: Not For New Designs
DigiKey Programmable: Not Verified
Description: IC SUPERVISOR 1 CHANNEL SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Output: Open Drain or Open Collector
Type: Simple Reset/Power-On Reset
Reset: Active Low
Operating Temperature: -40°C ~ 85°C (TA)
Number of Voltages Monitored: 1
Reset Timeout: 140ms Minimum
Voltage - Threshold: 2.93V
Supplier Device Package: SOT-23-3
Part Status: Not For New Designs
DigiKey Programmable: Not Verified
auf Bestellung 5532 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 50+ | 0.35 EUR |
| 74+ | 0.24 EUR |
| 84+ | 0.21 EUR |
| 100+ | 0.18 EUR |
| 250+ | 0.17 EUR |
| 500+ | 0.16 EUR |
| 1000+ | 0.15 EUR |
| APX803-23SRG-7 |
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Hersteller: Diodes Incorporated
Description: IC SUPERVISOR 1 CHANNEL SOT23R
DigiKey Programmable: Not Verified
Part Status: Not For New Designs
Supplier Device Package: SOT23R
Voltage - Threshold: 2.25V
Reset Timeout: 140ms Minimum
Number of Voltages Monitored: 1
Operating Temperature: -40°C ~ 85°C (TA)
Reset: Active Low
Type: Simple Reset/Power-On Reset
Output: Open Drain or Open Collector
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Description: IC SUPERVISOR 1 CHANNEL SOT23R
DigiKey Programmable: Not Verified
Part Status: Not For New Designs
Supplier Device Package: SOT23R
Voltage - Threshold: 2.25V
Reset Timeout: 140ms Minimum
Number of Voltages Monitored: 1
Operating Temperature: -40°C ~ 85°C (TA)
Reset: Active Low
Type: Simple Reset/Power-On Reset
Output: Open Drain or Open Collector
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
auf Bestellung 197 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 24+ | 0.74 EUR |
| 30+ | 0.61 EUR |
| 32+ | 0.55 EUR |
| 100+ | 0.41 EUR |
| APX803-29SAG-7 |
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Hersteller: Diodes Incorporated
Description: IC SUPERVISOR 1 CHANNEL SOT23-3
DigiKey Programmable: Not Verified
Part Status: Not For New Designs
Supplier Device Package: SOT-23-3
Voltage - Threshold: 2.93V
Reset Timeout: 140ms Minimum
Number of Voltages Monitored: 1
Operating Temperature: -40°C ~ 85°C (TA)
Reset: Active Low
Type: Simple Reset/Power-On Reset
Output: Open Drain or Open Collector
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Description: IC SUPERVISOR 1 CHANNEL SOT23-3
DigiKey Programmable: Not Verified
Part Status: Not For New Designs
Supplier Device Package: SOT-23-3
Voltage - Threshold: 2.93V
Reset Timeout: 140ms Minimum
Number of Voltages Monitored: 1
Operating Temperature: -40°C ~ 85°C (TA)
Reset: Active Low
Type: Simple Reset/Power-On Reset
Output: Open Drain or Open Collector
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.14 EUR |
| APX803-31SAG-7 |
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Hersteller: Diodes Incorporated
Description: IC SUPERVISOR 1 CHANNEL SOT23-3
Part Status: Not For New Designs
Supplier Device Package: SOT-23-3
Voltage - Threshold: 3.08V
Reset Timeout: 140ms Minimum
Number of Voltages Monitored: 1
Operating Temperature: -40°C ~ 85°C (TA)
Reset: Active Low
Type: Simple Reset/Power-On Reset
Output: Open Drain or Open Collector
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Description: IC SUPERVISOR 1 CHANNEL SOT23-3
Part Status: Not For New Designs
Supplier Device Package: SOT-23-3
Voltage - Threshold: 3.08V
Reset Timeout: 140ms Minimum
Number of Voltages Monitored: 1
Operating Temperature: -40°C ~ 85°C (TA)
Reset: Active Low
Type: Simple Reset/Power-On Reset
Output: Open Drain or Open Collector
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.17 EUR |
| APX803-40SAG-7 |
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Hersteller: Diodes Incorporated
Description: IC SUPERVISOR 1 CHANNEL SOT23-3
Part Status: Not For New Designs
Supplier Device Package: SOT-23-3
Voltage - Threshold: 4V
Reset Timeout: 140ms Minimum
Number of Voltages Monitored: 1
Operating Temperature: -40°C ~ 85°C (TA)
Reset: Active Low
Type: Simple Reset/Power-On Reset
Output: Open Drain or Open Collector
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Description: IC SUPERVISOR 1 CHANNEL SOT23-3
Part Status: Not For New Designs
Supplier Device Package: SOT-23-3
Voltage - Threshold: 4V
Reset Timeout: 140ms Minimum
Number of Voltages Monitored: 1
Operating Temperature: -40°C ~ 85°C (TA)
Reset: Active Low
Type: Simple Reset/Power-On Reset
Output: Open Drain or Open Collector
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| APX803-40SRG-7 |
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Hersteller: Diodes Incorporated
Description: IC SUPERVISOR 1 CHANNEL SOT23R
DigiKey Programmable: Not Verified
Voltage - Threshold: 4V
Reset Timeout: 140ms Minimum
Number of Voltages Monitored: 1
Operating Temperature: -40°C ~ 85°C (TA)
Reset: Active Low
Type: Simple Reset/Power-On Reset
Output: Open Drain or Open Collector
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Part Status: Active
Supplier Device Package: SOT23R
Description: IC SUPERVISOR 1 CHANNEL SOT23R
DigiKey Programmable: Not Verified
Voltage - Threshold: 4V
Reset Timeout: 140ms Minimum
Number of Voltages Monitored: 1
Operating Temperature: -40°C ~ 85°C (TA)
Reset: Active Low
Type: Simple Reset/Power-On Reset
Output: Open Drain or Open Collector
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Part Status: Active
Supplier Device Package: SOT23R
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.2 EUR |
| 6000+ | 0.19 EUR |
| 15000+ | 0.18 EUR |
| APX803-44SAG-7 |
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Hersteller: Diodes Incorporated
Description: IC SUPERVISOR 1 CHANNEL SOT23-3
DigiKey Programmable: Not Verified
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Part Status: Not For New Designs
Supplier Device Package: SOT-23-3
Voltage - Threshold: 4.38V
Reset Timeout: 140ms Minimum
Number of Voltages Monitored: 1
Operating Temperature: -40°C ~ 85°C (TA)
Reset: Active Low
Type: Simple Reset/Power-On Reset
Output: Open Drain or Open Collector
Description: IC SUPERVISOR 1 CHANNEL SOT23-3
DigiKey Programmable: Not Verified
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Part Status: Not For New Designs
Supplier Device Package: SOT-23-3
Voltage - Threshold: 4.38V
Reset Timeout: 140ms Minimum
Number of Voltages Monitored: 1
Operating Temperature: -40°C ~ 85°C (TA)
Reset: Active Low
Type: Simple Reset/Power-On Reset
Output: Open Drain or Open Collector
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.17 EUR |
| DXT2012P5-13 |
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Hersteller: Diodes Incorporated
Description: TRANS PNP 60V 5.5A POWERDI 5
Power - Max: 3.2 W
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 5.5 A
Supplier Device Package: PowerDI™ 5
Frequency - Transition: 120MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2A, 1V
Current - Collector Cutoff (Max): 20nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 500mA, 5A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: PowerDI™ 5
Packaging: Tape & Reel (TR)
Description: TRANS PNP 60V 5.5A POWERDI 5
Power - Max: 3.2 W
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 5.5 A
Supplier Device Package: PowerDI™ 5
Frequency - Transition: 120MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2A, 1V
Current - Collector Cutoff (Max): 20nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 500mA, 5A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: PowerDI™ 5
Packaging: Tape & Reel (TR)
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 5000+ | 0.39 EUR |
| DXT2013P5-13 |
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Hersteller: Diodes Incorporated
Description: TRANS PNP 100V 5A POWERDI 5
Power - Max: 3.2 W
Voltage - Collector Emitter Breakdown (Max): 100 V
Current - Collector (Ic) (Max): 5 A
Supplier Device Package: PowerDI™ 5
Frequency - Transition: 125MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 1V
Current - Collector Cutoff (Max): 20nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 340mV @ 400mA, 4A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: PowerDI™ 5
Packaging: Tape & Reel (TR)
Description: TRANS PNP 100V 5A POWERDI 5
Power - Max: 3.2 W
Voltage - Collector Emitter Breakdown (Max): 100 V
Current - Collector (Ic) (Max): 5 A
Supplier Device Package: PowerDI™ 5
Frequency - Transition: 125MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 1V
Current - Collector Cutoff (Max): 20nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 340mV @ 400mA, 4A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: PowerDI™ 5
Packaging: Tape & Reel (TR)
auf Bestellung 200000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 5000+ | 0.39 EUR |
| 10000+ | 0.36 EUR |
| 15000+ | 0.35 EUR |
| 25000+ | 0.34 EUR |
| DXT2014P5-13 |
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Hersteller: Diodes Incorporated
Description: TRANS PNP 140V 4A POWERDI 5
Power - Max: 3.2 W
Voltage - Collector Emitter Breakdown (Max): 140 V
Current - Collector (Ic) (Max): 4 A
Supplier Device Package: PowerDI™ 5
Frequency - Transition: 120MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 5V
Current - Collector Cutoff (Max): 20nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 360mV @ 300mA, 3A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: PowerDI™ 5
Packaging: Tape & Reel (TR)
Description: TRANS PNP 140V 4A POWERDI 5
Power - Max: 3.2 W
Voltage - Collector Emitter Breakdown (Max): 140 V
Current - Collector (Ic) (Max): 4 A
Supplier Device Package: PowerDI™ 5
Frequency - Transition: 120MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 5V
Current - Collector Cutoff (Max): 20nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 360mV @ 300mA, 3A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: PowerDI™ 5
Packaging: Tape & Reel (TR)
auf Bestellung 200000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 5000+ | 0.41 EUR |
| 10000+ | 0.38 EUR |
| 15000+ | 0.36 EUR |
| DXT458P5-13 |
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Hersteller: Diodes Incorporated
Description: TRANS NPN 400V 0.3A POWERDI 5
Power - Max: 2.8 W
Voltage - Collector Emitter Breakdown (Max): 400 V
Current - Collector (Ic) (Max): 300 mA
Part Status: Active
Supplier Device Package: PowerDI™ 5
Frequency - Transition: 50MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 10V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 500mV @ 6mA, 50mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: PowerDI™ 5
Packaging: Tape & Reel (TR)
Description: TRANS NPN 400V 0.3A POWERDI 5
Power - Max: 2.8 W
Voltage - Collector Emitter Breakdown (Max): 400 V
Current - Collector (Ic) (Max): 300 mA
Part Status: Active
Supplier Device Package: PowerDI™ 5
Frequency - Transition: 50MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 10V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 500mV @ 6mA, 50mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: PowerDI™ 5
Packaging: Tape & Reel (TR)
auf Bestellung 385000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 5000+ | 0.25 EUR |
| 10000+ | 0.23 EUR |
| 15000+ | 0.22 EUR |
| 25000+ | 0.21 EUR |
| DXT5551P5-13 |
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Hersteller: Diodes Incorporated
Description: TRANS NPN 160V 0.6A POWERDI 5
Packaging: Tape & Reel (TR)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 130MHz
Supplier Device Package: PowerDI™ 5
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 2.25 W
Description: TRANS NPN 160V 0.6A POWERDI 5
Packaging: Tape & Reel (TR)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 130MHz
Supplier Device Package: PowerDI™ 5
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 2.25 W
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| DXT690BP5-13 |
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Hersteller: Diodes Incorporated
Description: TRANS NPN 45V 3A POWERDI 5
Packaging: Tape & Reel (TR)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 150mA, 3A
Current - Collector Cutoff (Max): 20nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 2A, 2V
Frequency - Transition: 150MHz
Supplier Device Package: PowerDI™ 5
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 740 mW
Description: TRANS NPN 45V 3A POWERDI 5
Packaging: Tape & Reel (TR)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 150mA, 3A
Current - Collector Cutoff (Max): 20nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 2A, 2V
Frequency - Transition: 150MHz
Supplier Device Package: PowerDI™ 5
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 740 mW
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| DXT790AP5-13 |
![]() |
Hersteller: Diodes Incorporated
Description: TRANS PNP 40V 3A POWERDI5
Power - Max: 3.2 W
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 3 A
Part Status: Active
Supplier Device Package: PowerDI™ 5
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 10mA, 2V
Current - Collector Cutoff (Max): 20nA
Vce Saturation (Max) @ Ib, Ic: 450mV @ 300mA, 3A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: PowerDI™ 5
Packaging: Tape & Reel (TR)
Description: TRANS PNP 40V 3A POWERDI5
Power - Max: 3.2 W
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 3 A
Part Status: Active
Supplier Device Package: PowerDI™ 5
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 10mA, 2V
Current - Collector Cutoff (Max): 20nA
Vce Saturation (Max) @ Ib, Ic: 450mV @ 300mA, 3A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: PowerDI™ 5
Packaging: Tape & Reel (TR)
auf Bestellung 100000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 5000+ | 0.33 EUR |
| ZXMP6A17N8TC |
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Hersteller: Diodes Incorporated
Description: MOSFET P-CH 60V 2.7A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 637 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 17.7 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 1.56W (Ta)
Rds On (Max) @ Id, Vgs: 125mOhm @ 2.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Description: MOSFET P-CH 60V 2.7A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 637 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 17.7 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 1.56W (Ta)
Rds On (Max) @ Id, Vgs: 125mOhm @ 2.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| DMN6068SE-13 |
![]() |
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 4.1A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta)
Rds On (Max) @ Id, Vgs: 68mOhm @ 12A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-223-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 10.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 502 pF @ 30 V
Description: MOSFET N-CH 60V 4.1A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta)
Rds On (Max) @ Id, Vgs: 68mOhm @ 12A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-223-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 10.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 502 pF @ 30 V
auf Bestellung 48000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4000+ | 0.25 EUR |
| 8000+ | 0.23 EUR |
| 12000+ | 0.22 EUR |
| 20000+ | 0.21 EUR |
| 28000+ | 0.2 EUR |
| 40000+ | 0.19 EUR |
| ZXTN617MATA |
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Hersteller: Diodes Incorporated
Description: TRANS NPN 15V 4.5A DFN2020B-3
Voltage - Collector Emitter Breakdown (Max): 15 V
Current - Collector (Ic) (Max): 4.5 A
Part Status: Active
Supplier Device Package: DFN2020B-3
Frequency - Transition: 120MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 3A, 2V
Current - Collector Cutoff (Max): 25nA
Vce Saturation (Max) @ Ib, Ic: 280mV @ 50mA, 4.5A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: 3-UDFN
Packaging: Tape & Reel (TR)
Power - Max: 1.5 W
Description: TRANS NPN 15V 4.5A DFN2020B-3
Voltage - Collector Emitter Breakdown (Max): 15 V
Current - Collector (Ic) (Max): 4.5 A
Part Status: Active
Supplier Device Package: DFN2020B-3
Frequency - Transition: 120MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 3A, 2V
Current - Collector Cutoff (Max): 25nA
Vce Saturation (Max) @ Ib, Ic: 280mV @ 50mA, 4.5A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: 3-UDFN
Packaging: Tape & Reel (TR)
Power - Max: 1.5 W
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.24 EUR |
| DMN6068SE-13 |
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Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 4.1A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta)
Rds On (Max) @ Id, Vgs: 68mOhm @ 12A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-223-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 10.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 502 pF @ 30 V
Description: MOSFET N-CH 60V 4.1A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta)
Rds On (Max) @ Id, Vgs: 68mOhm @ 12A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-223-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 10.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 502 pF @ 30 V
auf Bestellung 49517 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 16+ | 1.11 EUR |
| 26+ | 0.7 EUR |
| 100+ | 0.45 EUR |
| 500+ | 0.34 EUR |
| 1000+ | 0.3 EUR |
| 2000+ | 0.28 EUR |
| DXT2012P5-13 |
![]() |
Hersteller: Diodes Incorporated
Description: TRANS PNP 60V 5.5A POWERDI 5
Power - Max: 3.2 W
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 5.5 A
Supplier Device Package: PowerDI™ 5
Frequency - Transition: 120MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2A, 1V
Current - Collector Cutoff (Max): 20nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 500mA, 5A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: PowerDI™ 5
Packaging: Cut Tape (CT)
Description: TRANS PNP 60V 5.5A POWERDI 5
Power - Max: 3.2 W
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 5.5 A
Supplier Device Package: PowerDI™ 5
Frequency - Transition: 120MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2A, 1V
Current - Collector Cutoff (Max): 20nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 500mA, 5A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: PowerDI™ 5
Packaging: Cut Tape (CT)
auf Bestellung 5164 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 11+ | 1.69 EUR |
| 17+ | 1.05 EUR |
| 100+ | 0.68 EUR |
| 500+ | 0.53 EUR |
| 1000+ | 0.48 EUR |
| 2000+ | 0.43 EUR |
| DXT2013P5-13 |
![]() |
Hersteller: Diodes Incorporated
Description: TRANS PNP 100V 5A POWERDI 5
Power - Max: 3.2 W
Voltage - Collector Emitter Breakdown (Max): 100 V
Current - Collector (Ic) (Max): 5 A
Supplier Device Package: PowerDI™ 5
Frequency - Transition: 125MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 1V
Current - Collector Cutoff (Max): 20nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 340mV @ 400mA, 4A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: PowerDI™ 5
Packaging: Cut Tape (CT)
Description: TRANS PNP 100V 5A POWERDI 5
Power - Max: 3.2 W
Voltage - Collector Emitter Breakdown (Max): 100 V
Current - Collector (Ic) (Max): 5 A
Supplier Device Package: PowerDI™ 5
Frequency - Transition: 125MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 1V
Current - Collector Cutoff (Max): 20nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 340mV @ 400mA, 4A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: PowerDI™ 5
Packaging: Cut Tape (CT)
auf Bestellung 204295 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 11+ | 1.69 EUR |
| 17+ | 1.05 EUR |
| 100+ | 0.68 EUR |
| 500+ | 0.53 EUR |
| 1000+ | 0.48 EUR |
| 2000+ | 0.43 EUR |
| DXT2014P5-13 |
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Hersteller: Diodes Incorporated
Description: TRANS PNP 140V 4A POWERDI 5
Power - Max: 3.2 W
Voltage - Collector Emitter Breakdown (Max): 140 V
Current - Collector (Ic) (Max): 4 A
Supplier Device Package: PowerDI™ 5
Frequency - Transition: 120MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 5V
Current - Collector Cutoff (Max): 20nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 360mV @ 300mA, 3A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: PowerDI™ 5
Packaging: Cut Tape (CT)
Description: TRANS PNP 140V 4A POWERDI 5
Power - Max: 3.2 W
Voltage - Collector Emitter Breakdown (Max): 140 V
Current - Collector (Ic) (Max): 4 A
Supplier Device Package: PowerDI™ 5
Frequency - Transition: 120MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 5V
Current - Collector Cutoff (Max): 20nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 360mV @ 300mA, 3A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: PowerDI™ 5
Packaging: Cut Tape (CT)
auf Bestellung 206689 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 10+ | 1.76 EUR |
| 17+ | 1.1 EUR |
| 100+ | 0.72 EUR |
| 500+ | 0.55 EUR |
| 1000+ | 0.5 EUR |
| 2000+ | 0.46 EUR |
| DXT458P5-13 |
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Hersteller: Diodes Incorporated
Description: TRANS NPN 400V 0.3A POWERDI 5
Power - Max: 2.8 W
Voltage - Collector Emitter Breakdown (Max): 400 V
Current - Collector (Ic) (Max): 300 mA
Part Status: Active
Supplier Device Package: PowerDI™ 5
Frequency - Transition: 50MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 10V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 500mV @ 6mA, 50mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: PowerDI™ 5
Packaging: Cut Tape (CT)
Description: TRANS NPN 400V 0.3A POWERDI 5
Power - Max: 2.8 W
Voltage - Collector Emitter Breakdown (Max): 400 V
Current - Collector (Ic) (Max): 300 mA
Part Status: Active
Supplier Device Package: PowerDI™ 5
Frequency - Transition: 50MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 10V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 500mV @ 6mA, 50mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: PowerDI™ 5
Packaging: Cut Tape (CT)
auf Bestellung 388585 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 16+ | 1.14 EUR |
| 25+ | 0.71 EUR |
| 100+ | 0.46 EUR |
| 500+ | 0.35 EUR |
| 1000+ | 0.31 EUR |
| 2000+ | 0.28 EUR |
| DXT5551P5-13 |
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Hersteller: Diodes Incorporated
Description: TRANS NPN 160V 0.6A POWERDI 5
Packaging: Cut Tape (CT)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 130MHz
Supplier Device Package: PowerDI™ 5
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 2.25 W
Description: TRANS NPN 160V 0.6A POWERDI 5
Packaging: Cut Tape (CT)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 130MHz
Supplier Device Package: PowerDI™ 5
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 2.25 W
auf Bestellung 3802 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 13+ | 1.37 EUR |
| 21+ | 0.86 EUR |
| 100+ | 0.56 EUR |
| 500+ | 0.43 EUR |
| 1000+ | 0.38 EUR |
| 2000+ | 0.35 EUR |
| DXT690BP5-13 |
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Hersteller: Diodes Incorporated
Description: TRANS NPN 45V 3A POWERDI 5
Packaging: Cut Tape (CT)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 150mA, 3A
Current - Collector Cutoff (Max): 20nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 2A, 2V
Frequency - Transition: 150MHz
Supplier Device Package: PowerDI™ 5
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 740 mW
Description: TRANS NPN 45V 3A POWERDI 5
Packaging: Cut Tape (CT)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 150mA, 3A
Current - Collector Cutoff (Max): 20nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 2A, 2V
Frequency - Transition: 150MHz
Supplier Device Package: PowerDI™ 5
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 740 mW
auf Bestellung 336 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 12+ | 1.58 EUR |
| 18+ | 0.99 EUR |
| 100+ | 0.64 EUR |
| DXT790AP5-13 |
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Hersteller: Diodes Incorporated
Description: TRANS PNP 40V 3A POWERDI5
Power - Max: 3.2 W
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 3 A
Part Status: Active
Supplier Device Package: PowerDI™ 5
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 10mA, 2V
Current - Collector Cutoff (Max): 20nA
Vce Saturation (Max) @ Ib, Ic: 450mV @ 300mA, 3A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: PowerDI™ 5
Packaging: Cut Tape (CT)
Description: TRANS PNP 40V 3A POWERDI5
Power - Max: 3.2 W
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 3 A
Part Status: Active
Supplier Device Package: PowerDI™ 5
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 10mA, 2V
Current - Collector Cutoff (Max): 20nA
Vce Saturation (Max) @ Ib, Ic: 450mV @ 300mA, 3A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: PowerDI™ 5
Packaging: Cut Tape (CT)
auf Bestellung 107449 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 14+ | 1.27 EUR |
| 21+ | 0.84 EUR |
| 100+ | 0.58 EUR |
| 500+ | 0.46 EUR |
| 1000+ | 0.42 EUR |
| 2000+ | 0.38 EUR |
| ZXMP6A17N8TC |
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Hersteller: Diodes Incorporated
Description: MOSFET P-CH 60V 2.7A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 637 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 17.7 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 1.56W (Ta)
Rds On (Max) @ Id, Vgs: 125mOhm @ 2.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Description: MOSFET P-CH 60V 2.7A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 637 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 17.7 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 1.56W (Ta)
Rds On (Max) @ Id, Vgs: 125mOhm @ 2.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| ZXTN617MATA |
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Hersteller: Diodes Incorporated
Description: TRANS NPN 15V 4.5A DFN2020B-3
Power - Max: 1.5 W
Voltage - Collector Emitter Breakdown (Max): 15 V
Current - Collector (Ic) (Max): 4.5 A
Part Status: Active
Supplier Device Package: DFN2020B-3
Frequency - Transition: 120MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 3A, 2V
Current - Collector Cutoff (Max): 25nA
Vce Saturation (Max) @ Ib, Ic: 280mV @ 50mA, 4.5A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: 3-UDFN
Packaging: Cut Tape (CT)
Description: TRANS NPN 15V 4.5A DFN2020B-3
Power - Max: 1.5 W
Voltage - Collector Emitter Breakdown (Max): 15 V
Current - Collector (Ic) (Max): 4.5 A
Part Status: Active
Supplier Device Package: DFN2020B-3
Frequency - Transition: 120MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 3A, 2V
Current - Collector Cutoff (Max): 25nA
Vce Saturation (Max) @ Ib, Ic: 280mV @ 50mA, 4.5A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: 3-UDFN
Packaging: Cut Tape (CT)
auf Bestellung 10221 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 21+ | 0.84 EUR |
| 25+ | 0.72 EUR |
| 100+ | 0.5 EUR |
| 500+ | 0.39 EUR |
| 1000+ | 0.32 EUR |
| ZXTN618MATA |
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Hersteller: Diodes Incorporated
Description: TRANS NPN 20V 4.5A DFN2020B-3
Current - Collector (Ic) (Max): 4.5 A
Part Status: Active
Supplier Device Package: DFN2020B-3
Frequency - Transition: 140MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2A, 2V
Current - Collector Cutoff (Max): 25nA
Vce Saturation (Max) @ Ib, Ic: 270mV @ 125mA, 4.5A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: 3-UDFN
Packaging: Tape & Reel (TR)
Power - Max: 1.5 W
Voltage - Collector Emitter Breakdown (Max): 20 V
Description: TRANS NPN 20V 4.5A DFN2020B-3
Current - Collector (Ic) (Max): 4.5 A
Part Status: Active
Supplier Device Package: DFN2020B-3
Frequency - Transition: 140MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2A, 2V
Current - Collector Cutoff (Max): 25nA
Vce Saturation (Max) @ Ib, Ic: 270mV @ 125mA, 4.5A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: 3-UDFN
Packaging: Tape & Reel (TR)
Power - Max: 1.5 W
Voltage - Collector Emitter Breakdown (Max): 20 V
auf Bestellung 267000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.29 EUR |
| 6000+ | 0.28 EUR |
| 9000+ | 0.26 EUR |
| 30000+ | 0.25 EUR |
| ZXTN619MATA |
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Hersteller: Diodes Incorporated
Description: TRANS NPN 50V 4A DFN2020B-3
Packaging: Tape & Reel (TR)
Package / Case: 3-UDFN
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 320mV @ 200mA, 4A
Current - Collector Cutoff (Max): 25nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2A, 2V
Frequency - Transition: 165MHz
Supplier Device Package: DFN2020B-3
Part Status: Active
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 3 W
Description: TRANS NPN 50V 4A DFN2020B-3
Packaging: Tape & Reel (TR)
Package / Case: 3-UDFN
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 320mV @ 200mA, 4A
Current - Collector Cutoff (Max): 25nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2A, 2V
Frequency - Transition: 165MHz
Supplier Device Package: DFN2020B-3
Part Status: Active
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 3 W
auf Bestellung 78000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.37 EUR |
| 6000+ | 0.34 EUR |
| 9000+ | 0.32 EUR |
| 15000+ | 0.31 EUR |
| 21000+ | 0.3 EUR |
| 30000+ | 0.29 EUR |
| ZXTN620MATA |
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Hersteller: Diodes Incorporated
Description: TRANS NPN 80V 3.5A DFN2020B-3
Power - Max: 3 W
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 3.5 A
Supplier Device Package: DFN2020B-3
Frequency - Transition: 160MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 200mA, 2V
Current - Collector Cutoff (Max): 25nA
Vce Saturation (Max) @ Ib, Ic: 325mV @ 300mA, 3.5A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: 3-UDFN
Packaging: Tape & Reel (TR)
Description: TRANS NPN 80V 3.5A DFN2020B-3
Power - Max: 3 W
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 3.5 A
Supplier Device Package: DFN2020B-3
Frequency - Transition: 160MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 200mA, 2V
Current - Collector Cutoff (Max): 25nA
Vce Saturation (Max) @ Ib, Ic: 325mV @ 300mA, 3.5A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: 3-UDFN
Packaging: Tape & Reel (TR)
auf Bestellung 18000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.29 EUR |
| 6000+ | 0.27 EUR |
| 9000+ | 0.26 EUR |
| 15000+ | 0.24 EUR |
| ZXTP718MATA |
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Hersteller: Diodes Incorporated
Description: TRANS PNP 20V 3.5A DFN2020B-3
Packaging: Tape & Reel (TR)
Package / Case: 3-UDFN
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 350mA, 3.5A
Current - Collector Cutoff (Max): 25nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 2A, 2V
Frequency - Transition: 180MHz
Supplier Device Package: DFN2020B-3
Current - Collector (Ic) (Max): 3.5 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 3 W
Description: TRANS PNP 20V 3.5A DFN2020B-3
Packaging: Tape & Reel (TR)
Package / Case: 3-UDFN
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 350mA, 3.5A
Current - Collector Cutoff (Max): 25nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 2A, 2V
Frequency - Transition: 180MHz
Supplier Device Package: DFN2020B-3
Current - Collector (Ic) (Max): 3.5 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 3 W
auf Bestellung 27000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.29 EUR |
| 6000+ | 0.27 EUR |
| 9000+ | 0.25 EUR |
| 15000+ | 0.24 EUR |
| 21000+ | 0.23 EUR |
| ZXTP720MATA |
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Hersteller: Diodes Incorporated
Description: TRANS PNP 40V 3A DFN2020B-3
Packaging: Tape & Reel (TR)
Package / Case: 3-UDFN
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 370mV @ 250mA, 2.5A
Current - Collector Cutoff (Max): 25nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 1.5A, 2V
Frequency - Transition: 190MHz
Supplier Device Package: DFN2020B-3
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 3 W
Description: TRANS PNP 40V 3A DFN2020B-3
Packaging: Tape & Reel (TR)
Package / Case: 3-UDFN
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 370mV @ 250mA, 2.5A
Current - Collector Cutoff (Max): 25nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 1.5A, 2V
Frequency - Transition: 190MHz
Supplier Device Package: DFN2020B-3
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 3 W
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| ZXTP722MATA |
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Hersteller: Diodes Incorporated
Description: TRANS PNP 70V 2.5A DFN2020B-3
Power - Max: 3 W
Voltage - Collector Emitter Breakdown (Max): 70 V
Current - Collector (Ic) (Max): 2.5 A
Supplier Device Package: DFN2020B-3
Frequency - Transition: 180MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1.5A, 5V
Current - Collector Cutoff (Max): 25nA
Vce Saturation (Max) @ Ib, Ic: 260mV @ 200mA, 1.5A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: 3-UDFN
Packaging: Tape & Reel (TR)
Description: TRANS PNP 70V 2.5A DFN2020B-3
Power - Max: 3 W
Voltage - Collector Emitter Breakdown (Max): 70 V
Current - Collector (Ic) (Max): 2.5 A
Supplier Device Package: DFN2020B-3
Frequency - Transition: 180MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1.5A, 5V
Current - Collector Cutoff (Max): 25nA
Vce Saturation (Max) @ Ib, Ic: 260mV @ 200mA, 1.5A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: 3-UDFN
Packaging: Tape & Reel (TR)
auf Bestellung 888000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.29 EUR |
| 6000+ | 0.28 EUR |
| 9000+ | 0.26 EUR |
| 30000+ | 0.25 EUR |
| ZXTP749FTA |
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Hersteller: Diodes Incorporated
Description: TRANS PNP 25V 3A SOT-23-3
Power - Max: 725 mW
Voltage - Collector Emitter Breakdown (Max): 25 V
Current - Collector (Ic) (Max): 3 A
Supplier Device Package: SOT-23-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Current - Collector Cutoff (Max): 50nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 300mA, 3A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Description: TRANS PNP 25V 3A SOT-23-3
Power - Max: 725 mW
Voltage - Collector Emitter Breakdown (Max): 25 V
Current - Collector (Ic) (Max): 3 A
Supplier Device Package: SOT-23-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Current - Collector Cutoff (Max): 50nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 300mA, 3A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.12 EUR |
| DXTP19020DP5-13 |
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Hersteller: Diodes Incorporated
Description: TRANS PNP 20V 8A POWERDI 5
Power - Max: 3 W
Voltage - Collector Emitter Breakdown (Max): 20 V
Current - Collector (Ic) (Max): 8 A
Part Status: Active
Supplier Device Package: PowerDI™ 5
Frequency - Transition: 176MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 2V
Current - Collector Cutoff (Max): 50nA (ICBO)
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: PowerDI™ 5
Packaging: Tape & Reel (TR)
Vce Saturation (Max) @ Ib, Ic: 275mV @ 800mA, 8A
Description: TRANS PNP 20V 8A POWERDI 5
Power - Max: 3 W
Voltage - Collector Emitter Breakdown (Max): 20 V
Current - Collector (Ic) (Max): 8 A
Part Status: Active
Supplier Device Package: PowerDI™ 5
Frequency - Transition: 176MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 2V
Current - Collector Cutoff (Max): 50nA (ICBO)
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: PowerDI™ 5
Packaging: Tape & Reel (TR)
Vce Saturation (Max) @ Ib, Ic: 275mV @ 800mA, 8A
auf Bestellung 55000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 5000+ | 0.3 EUR |
| 10000+ | 0.28 EUR |
| 15000+ | 0.26 EUR |
| 25000+ | 0.25 EUR |
| DXTP19020DP5-13 |
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Hersteller: Diodes Incorporated
Description: TRANS PNP 20V 8A POWERDI 5
Power - Max: 3 W
Voltage - Collector Emitter Breakdown (Max): 20 V
Current - Collector (Ic) (Max): 8 A
Part Status: Active
Frequency - Transition: 176MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 2V
Current - Collector Cutoff (Max): 50nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 275mV @ 800mA, 8A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: PowerDI™ 5
Packaging: Cut Tape (CT)
Supplier Device Package: PowerDI™ 5
Description: TRANS PNP 20V 8A POWERDI 5
Power - Max: 3 W
Voltage - Collector Emitter Breakdown (Max): 20 V
Current - Collector (Ic) (Max): 8 A
Part Status: Active
Frequency - Transition: 176MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 2V
Current - Collector Cutoff (Max): 50nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 275mV @ 800mA, 8A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: PowerDI™ 5
Packaging: Cut Tape (CT)
Supplier Device Package: PowerDI™ 5
auf Bestellung 58833 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 14+ | 1.34 EUR |
| 22+ | 0.83 EUR |
| 100+ | 0.54 EUR |
| 500+ | 0.41 EUR |
| 1000+ | 0.37 EUR |
| 2000+ | 0.34 EUR |
| ZXTN618MATA |
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Hersteller: Diodes Incorporated
Description: TRANS NPN 20V 4.5A DFN2020B-3
Power - Max: 1.5 W
Voltage - Collector Emitter Breakdown (Max): 20 V
Current - Collector (Ic) (Max): 4.5 A
Part Status: Active
Supplier Device Package: DFN2020B-3
Frequency - Transition: 140MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2A, 2V
Current - Collector Cutoff (Max): 25nA
Vce Saturation (Max) @ Ib, Ic: 270mV @ 125mA, 4.5A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: 3-UDFN
Packaging: Cut Tape (CT)
Description: TRANS NPN 20V 4.5A DFN2020B-3
Power - Max: 1.5 W
Voltage - Collector Emitter Breakdown (Max): 20 V
Current - Collector (Ic) (Max): 4.5 A
Part Status: Active
Supplier Device Package: DFN2020B-3
Frequency - Transition: 140MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2A, 2V
Current - Collector Cutoff (Max): 25nA
Vce Saturation (Max) @ Ib, Ic: 270mV @ 125mA, 4.5A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: 3-UDFN
Packaging: Cut Tape (CT)
auf Bestellung 269984 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 21+ | 0.86 EUR |
| 24+ | 0.74 EUR |
| 100+ | 0.51 EUR |
| 500+ | 0.4 EUR |
| 1000+ | 0.33 EUR |
| ZXTN619MATA |
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Hersteller: Diodes Incorporated
Description: TRANS NPN 50V 4A DFN2020B-3
Packaging: Cut Tape (CT)
Package / Case: 3-UDFN
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 320mV @ 200mA, 4A
Current - Collector Cutoff (Max): 25nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2A, 2V
Frequency - Transition: 165MHz
Supplier Device Package: DFN2020B-3
Part Status: Active
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 3 W
Description: TRANS NPN 50V 4A DFN2020B-3
Packaging: Cut Tape (CT)
Package / Case: 3-UDFN
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 320mV @ 200mA, 4A
Current - Collector Cutoff (Max): 25nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2A, 2V
Frequency - Transition: 165MHz
Supplier Device Package: DFN2020B-3
Part Status: Active
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 3 W
auf Bestellung 80455 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 12+ | 1.51 EUR |
| 19+ | 0.94 EUR |
| 100+ | 0.61 EUR |
| 500+ | 0.47 EUR |
| 1000+ | 0.42 EUR |
| ZXTN620MATA |
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Hersteller: Diodes Incorporated
Description: TRANS NPN 80V 3.5A DFN2020B-3
Package / Case: 3-UDFN
Packaging: Cut Tape (CT)
Power - Max: 3 W
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 3.5 A
Supplier Device Package: DFN2020B-3
Frequency - Transition: 160MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 200mA, 2V
Current - Collector Cutoff (Max): 25nA
Vce Saturation (Max) @ Ib, Ic: 325mV @ 300mA, 3.5A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Description: TRANS NPN 80V 3.5A DFN2020B-3
Package / Case: 3-UDFN
Packaging: Cut Tape (CT)
Power - Max: 3 W
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 3.5 A
Supplier Device Package: DFN2020B-3
Frequency - Transition: 160MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 200mA, 2V
Current - Collector Cutoff (Max): 25nA
Vce Saturation (Max) @ Ib, Ic: 325mV @ 300mA, 3.5A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
auf Bestellung 20872 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 15+ | 1.21 EUR |
| 24+ | 0.76 EUR |
| 100+ | 0.49 EUR |
| 500+ | 0.38 EUR |
| 1000+ | 0.34 EUR |
| ZXTP718MATA |
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Hersteller: Diodes Incorporated
Description: TRANS PNP 20V 3.5A DFN2020B-3
Packaging: Cut Tape (CT)
Package / Case: 3-UDFN
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 350mA, 3.5A
Current - Collector Cutoff (Max): 25nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 2A, 2V
Frequency - Transition: 180MHz
Supplier Device Package: DFN2020B-3
Current - Collector (Ic) (Max): 3.5 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 3 W
Description: TRANS PNP 20V 3.5A DFN2020B-3
Packaging: Cut Tape (CT)
Package / Case: 3-UDFN
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 350mA, 3.5A
Current - Collector Cutoff (Max): 25nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 2A, 2V
Frequency - Transition: 180MHz
Supplier Device Package: DFN2020B-3
Current - Collector (Ic) (Max): 3.5 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 3 W
auf Bestellung 29638 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 15+ | 1.21 EUR |
| 24+ | 0.76 EUR |
| 100+ | 0.49 EUR |
| 500+ | 0.38 EUR |
| 1000+ | 0.34 EUR |
| ZXTP722MATA |
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Hersteller: Diodes Incorporated
Description: TRANS PNP 70V 2.5A DFN2020B-3
Power - Max: 3 W
Voltage - Collector Emitter Breakdown (Max): 70 V
Current - Collector (Ic) (Max): 2.5 A
Supplier Device Package: DFN2020B-3
Frequency - Transition: 180MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1.5A, 5V
Current - Collector Cutoff (Max): 25nA
Vce Saturation (Max) @ Ib, Ic: 260mV @ 200mA, 1.5A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: 3-UDFN
Packaging: Cut Tape (CT)
Description: TRANS PNP 70V 2.5A DFN2020B-3
Power - Max: 3 W
Voltage - Collector Emitter Breakdown (Max): 70 V
Current - Collector (Ic) (Max): 2.5 A
Supplier Device Package: DFN2020B-3
Frequency - Transition: 180MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1.5A, 5V
Current - Collector Cutoff (Max): 25nA
Vce Saturation (Max) @ Ib, Ic: 260mV @ 200mA, 1.5A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: 3-UDFN
Packaging: Cut Tape (CT)
auf Bestellung 890022 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 21+ | 0.86 EUR |
| 24+ | 0.74 EUR |
| 100+ | 0.51 EUR |
| 500+ | 0.4 EUR |
| 1000+ | 0.33 EUR |
| ZXTP720MATA |
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Hersteller: Diodes Incorporated
Description: TRANS PNP 40V 3A DFN2020B-3
Packaging: Cut Tape (CT)
Package / Case: 3-UDFN
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 370mV @ 250mA, 2.5A
Current - Collector Cutoff (Max): 25nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 1.5A, 2V
Frequency - Transition: 190MHz
Supplier Device Package: DFN2020B-3
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 3 W
Description: TRANS PNP 40V 3A DFN2020B-3
Packaging: Cut Tape (CT)
Package / Case: 3-UDFN
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 370mV @ 250mA, 2.5A
Current - Collector Cutoff (Max): 25nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 1.5A, 2V
Frequency - Transition: 190MHz
Supplier Device Package: DFN2020B-3
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 3 W
auf Bestellung 9401 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 13+ | 1.44 EUR |
| 20+ | 0.91 EUR |
| 100+ | 0.59 EUR |
| 500+ | 0.45 EUR |
| 1000+ | 0.41 EUR |
| ZXTP749FTA |
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Hersteller: Diodes Incorporated
Description: TRANS PNP 25V 3A SOT-23-3
Power - Max: 725 mW
Voltage - Collector Emitter Breakdown (Max): 25 V
Current - Collector (Ic) (Max): 3 A
Supplier Device Package: SOT-23-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Current - Collector Cutoff (Max): 50nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 300mA, 3A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Description: TRANS PNP 25V 3A SOT-23-3
Power - Max: 725 mW
Voltage - Collector Emitter Breakdown (Max): 25 V
Current - Collector (Ic) (Max): 3 A
Supplier Device Package: SOT-23-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Current - Collector Cutoff (Max): 50nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 300mA, 3A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
auf Bestellung 5744 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 27+ | 0.67 EUR |
| 43+ | 0.42 EUR |
| 100+ | 0.26 EUR |
| 500+ | 0.19 EUR |
| 1000+ | 0.17 EUR |
| DMN4027SSS-13 |
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Hersteller: Diodes Incorporated
Description: MOSFET N-CH 40V 6A 8SO
Description: MOSFET N-CH 40V 6A 8SO
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| DMN4034SSD-13 |
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Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 40V 4.8A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.8W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 4.8A
Input Capacitance (Ciss) (Max) @ Vds: 453pF @ 20V
Rds On (Max) @ Id, Vgs: 34mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Description: MOSFET 2N-CH 40V 4.8A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.8W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 4.8A
Input Capacitance (Ciss) (Max) @ Vds: 453pF @ 20V
Rds On (Max) @ Id, Vgs: 34mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2500+ | 0.54 EUR |
| DMN4034SSS-13 |
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Hersteller: Diodes Incorporated
Description: MOSFET N-CH 40V 5.4A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta)
Rds On (Max) @ Id, Vgs: 34mOhm @ 6A, 10V
Power Dissipation (Max): 1.56W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 453 pF @ 20 V
Description: MOSFET N-CH 40V 5.4A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta)
Rds On (Max) @ Id, Vgs: 34mOhm @ 6A, 10V
Power Dissipation (Max): 1.56W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 453 pF @ 20 V
auf Bestellung 60000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2500+ | 0.38 EUR |
| 5000+ | 0.36 EUR |
| DMN6066SSD-13 |
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Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 60V 3.3A 8SO
Part Status: Active
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 3V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 10.3nC @ 10V
Rds On (Max) @ Id, Vgs: 66mOhm @ 4.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 502pF @ 30V
Current - Continuous Drain (Id) @ 25°C: 3.3A
Drain to Source Voltage (Vdss): 60V
Power - Max: 1.8W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Description: MOSFET 2N-CH 60V 3.3A 8SO
Part Status: Active
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 3V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 10.3nC @ 10V
Rds On (Max) @ Id, Vgs: 66mOhm @ 4.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 502pF @ 30V
Current - Continuous Drain (Id) @ 25°C: 3.3A
Drain to Source Voltage (Vdss): 60V
Power - Max: 1.8W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
auf Bestellung 22500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2500+ | 0.62 EUR |
| 5000+ | 0.59 EUR |
| 12500+ | 0.57 EUR |
| DMN6066SSS-13 |
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Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 3.7A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
Rds On (Max) @ Id, Vgs: 66mOhm @ 4.5A, 10V
Power Dissipation (Max): 1.56W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 10.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 502 pF @ 30 V
Description: MOSFET N-CH 60V 3.7A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
Rds On (Max) @ Id, Vgs: 66mOhm @ 4.5A, 10V
Power Dissipation (Max): 1.56W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 10.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 502 pF @ 30 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2500+ | 0.46 EUR |
| DMP4050SSD-13 |
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Hersteller: Diodes Incorporated
Description: MOSFET 2P-CH 40V 4A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.8W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 4A
Input Capacitance (Ciss) (Max) @ Vds: 674pF @ 20V
Rds On (Max) @ Id, Vgs: 50mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 13.9nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Description: MOSFET 2P-CH 40V 4A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.8W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 4A
Input Capacitance (Ciss) (Max) @ Vds: 674pF @ 20V
Rds On (Max) @ Id, Vgs: 50mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 13.9nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
auf Bestellung 47500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2500+ | 0.73 EUR |
| 5000+ | 0.68 EUR |
| 7500+ | 0.65 EUR |
| 12500+ | 0.62 EUR |
| 17500+ | 0.61 EUR |
| DMP4050SSS-13 |
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Hersteller: Diodes Incorporated
Description: MOSFET P-CH 40V 4.4A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 6A, 10V
Power Dissipation (Max): 1.56W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 13.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 674 pF @ 20 V
Description: MOSFET P-CH 40V 4.4A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 6A, 10V
Power Dissipation (Max): 1.56W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 13.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 674 pF @ 20 V
auf Bestellung 25000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2500+ | 0.46 EUR |
| 5000+ | 0.42 EUR |
| 7500+ | 0.41 EUR |
| 12500+ | 0.39 EUR |
| 17500+ | 0.37 EUR |
| 25000+ | 0.36 EUR |
| DXT2010P5-13 |
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Hersteller: Diodes Incorporated
Description: TRANS NPN 60V 6A POWERDI 5
Packaging: Tape & Reel (TR)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 260mV @ 300mA, 6A
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2A, 1V
Frequency - Transition: 130MHz
Supplier Device Package: PowerDI™ 5
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 3.2 W
Description: TRANS NPN 60V 6A POWERDI 5
Packaging: Tape & Reel (TR)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 260mV @ 300mA, 6A
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2A, 1V
Frequency - Transition: 130MHz
Supplier Device Package: PowerDI™ 5
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 3.2 W
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 5000+ | 0.34 EUR |
| 10000+ | 0.32 EUR |
| 15000+ | 0.3 EUR |
| DXT2011P5-13 |
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Hersteller: Diodes Incorporated
Description: TRANS NPN 100V 6A POWERDI 5
Packaging: Tape & Reel (TR)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 220mV @ 500mA, 5A
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2A, 2V
Frequency - Transition: 130MHz
Supplier Device Package: PowerDI™ 5
Part Status: Active
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 3.2 W
Description: TRANS NPN 100V 6A POWERDI 5
Packaging: Tape & Reel (TR)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 220mV @ 500mA, 5A
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2A, 2V
Frequency - Transition: 130MHz
Supplier Device Package: PowerDI™ 5
Part Status: Active
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 3.2 W
auf Bestellung 25000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 5000+ | 0.34 EUR |
| 10000+ | 0.32 EUR |
| 15000+ | 0.31 EUR |
| 25000+ | 0.3 EUR |
| DMN4027SSS-13 |
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Hersteller: Diodes Incorporated
Description: MOSFET N-CH 40V 6A 8SO
Description: MOSFET N-CH 40V 6A 8SO
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| DMN4027SSS-13 |
![]() |
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 40V 6A 8SO
Description: MOSFET N-CH 40V 6A 8SO
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| DMN4034SSD-13 |
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Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 40V 4.8A 8SO
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Rds On (Max) @ Id, Vgs: 34mOhm @ 6A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 453pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 4.8A
Drain to Source Voltage (Vdss): 40V
Power - Max: 1.8W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 3V @ 250µA
Description: MOSFET 2N-CH 40V 4.8A 8SO
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Rds On (Max) @ Id, Vgs: 34mOhm @ 6A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 453pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 4.8A
Drain to Source Voltage (Vdss): 40V
Power - Max: 1.8W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 3V @ 250µA
auf Bestellung 4127 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 9+ | 2.11 EUR |
| 14+ | 1.33 EUR |
| 100+ | 0.88 EUR |
| 500+ | 0.69 EUR |
| 1000+ | 0.63 EUR |
| DMN4034SSS-13 |
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Hersteller: Diodes Incorporated
Description: MOSFET N-CH 40V 5.4A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 453 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.56W (Ta)
Rds On (Max) @ Id, Vgs: 34mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 40V 5.4A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 453 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.56W (Ta)
Rds On (Max) @ Id, Vgs: 34mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
auf Bestellung 62930 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 13+ | 1.37 EUR |
| 18+ | 0.99 EUR |
| 100+ | 0.67 EUR |
| 500+ | 0.54 EUR |
| 1000+ | 0.49 EUR |
| DMN6066SSD-13 |
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Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 60V 3.3A 8SO
Part Status: Active
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 3V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 10.3nC @ 10V
Rds On (Max) @ Id, Vgs: 66mOhm @ 4.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 502pF @ 30V
Current - Continuous Drain (Id) @ 25°C: 3.3A
Drain to Source Voltage (Vdss): 60V
Power - Max: 1.8W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Description: MOSFET 2N-CH 60V 3.3A 8SO
Part Status: Active
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 3V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 10.3nC @ 10V
Rds On (Max) @ Id, Vgs: 66mOhm @ 4.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 502pF @ 30V
Current - Continuous Drain (Id) @ 25°C: 3.3A
Drain to Source Voltage (Vdss): 60V
Power - Max: 1.8W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
auf Bestellung 24979 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 13+ | 1.46 EUR |
| 14+ | 1.31 EUR |
| 100+ | 1.02 EUR |
| 500+ | 0.84 EUR |
| 1000+ | 0.67 EUR |
| DMN6066SSS-13 |
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Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 3.7A 8SO
Gate Charge (Qg) (Max) @ Vgs: 10.3 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.56W (Ta)
Rds On (Max) @ Id, Vgs: 66mOhm @ 4.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 502 pF @ 30 V
Description: MOSFET N-CH 60V 3.7A 8SO
Gate Charge (Qg) (Max) @ Vgs: 10.3 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.56W (Ta)
Rds On (Max) @ Id, Vgs: 66mOhm @ 4.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 502 pF @ 30 V
auf Bestellung 4633 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 11+ | 1.64 EUR |
| 16+ | 1.15 EUR |
| 100+ | 0.76 EUR |
| 500+ | 0.59 EUR |
| 1000+ | 0.53 EUR |
| DMP4050SSD-13 |
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Hersteller: Diodes Incorporated
Description: MOSFET 2P-CH 40V 4A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.8W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 4A
Input Capacitance (Ciss) (Max) @ Vds: 674pF @ 20V
Rds On (Max) @ Id, Vgs: 50mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 13.9nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Description: MOSFET 2P-CH 40V 4A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.8W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 4A
Input Capacitance (Ciss) (Max) @ Vds: 674pF @ 20V
Rds On (Max) @ Id, Vgs: 50mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 13.9nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
auf Bestellung 48895 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 7+ | 2.66 EUR |
| 11+ | 1.69 EUR |
| 100+ | 1.13 EUR |
| 500+ | 0.89 EUR |
| 1000+ | 0.81 EUR |
| DMP4050SSS-13 |
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Hersteller: Diodes Incorporated
Description: MOSFET P-CH 40V 4.4A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 6A, 10V
Power Dissipation (Max): 1.56W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 13.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 674 pF @ 20 V
Description: MOSFET P-CH 40V 4.4A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 6A, 10V
Power Dissipation (Max): 1.56W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 13.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 674 pF @ 20 V
auf Bestellung 27406 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 10+ | 1.8 EUR |
| 16+ | 1.13 EUR |
| 100+ | 0.74 EUR |
| 500+ | 0.57 EUR |
| 1000+ | 0.52 EUR |








