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ZXMS81090SPQ-13 ZXMS81090SPQ-13 Diodes Incorporated ZXMS81090SPQ.pdf Description: HIGH SIDE INTELLIFET SO-8EP T&R
Packaging: Cut Tape (CT)
Features: Slew Rate Controlled
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 90mOhm
Input Type: Non-Inverting
Voltage - Load: 5V ~ 28V
Voltage - Supply (Vcc/Vdd): 5V ~ Not Required
Current - Output (Max): 3A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-SO-EP (Type E)
Fault Protection: Current Limiting (Adjustable), Open Load Detect, Over Temperature, Over Voltage, Reverse Battery, Short Circuit, UVLO
Part Status: Active
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7+2.8 EUR
10+1.78 EUR
100+1.2 EUR
500+0.95 EUR
1000+0.87 EUR
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ZXMS6008FFQ-7 ZXMS6008FFQ-7 Diodes Incorporated ZXMS6008FFQ.pdf Description: LOW SIDE INTELLIFET SOT23F T&R 3
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-3 Flat Leads
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Low Side
Rds On (Typ): 500mOhm
Input Type: Non-Inverting
Voltage - Load: 60V
Voltage - Supply (Vcc/Vdd): 0V ~ 5.5V
Current - Output (Max): 1.1A
Ratio - Input:Output: 1:1
Supplier Device Package: SOT-23F
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage, Short Circuit, UVLO
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 141000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.32 EUR
6000+0.29 EUR
9000+0.28 EUR
15000+0.26 EUR
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ZXMS6008FFQ-7 ZXMS6008FFQ-7 Diodes Incorporated ZXMS6008FFQ.pdf Description: LOW SIDE INTELLIFET SOT23F T&R 3
Packaging: Cut Tape (CT)
Package / Case: SOT-23-3 Flat Leads
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Low Side
Rds On (Typ): 500mOhm
Input Type: Non-Inverting
Voltage - Load: 60V
Voltage - Supply (Vcc/Vdd): 0V ~ 5.5V
Current - Output (Max): 1.1A
Ratio - Input:Output: 1:1
Supplier Device Package: SOT-23F
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage, Short Circuit, UVLO
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 141478 Stücke:
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14+1.34 EUR
22+0.83 EUR
100+0.54 EUR
500+0.41 EUR
1000+0.37 EUR
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ZXMS6004DGQ-13 ZXMS6004DGQ-13 Diodes Incorporated ZXMS6004DGQ.pdf Description: LOW SIDE INTELLIFET SOT223
Packaging: Cut Tape (CT)
Features: Auto Restart
Package / Case: TO-261-4, TO-261AA
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Low Side
Rds On (Typ): 350mOhm
Input Type: Non-Inverting
Voltage - Load: 60V (Max)
Voltage - Supply (Vcc/Vdd): 3.3V, 5V
Current - Output (Max): 1.3A
Ratio - Input:Output: 1:1
Supplier Device Package: SOT-223-3
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage, Short Circuit
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 67478 Stücke:
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12+1.55 EUR
16+1.11 EUR
25+1 EUR
100+0.88 EUR
250+0.83 EUR
500+0.79 EUR
1000+0.76 EUR
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ZXMS6008FF-7 ZXMS6008FF-7 Diodes Incorporated ZXMS6008FF.pdf Description: LOW SIDE INTELLIFET SOT23F T&R 3
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-3 Flat Leads
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Low Side
Rds On (Typ): 500mOhm
Input Type: Non-Inverting
Voltage - Load: 60V
Voltage - Supply (Vcc/Vdd): 0V ~ 5.5V
Current - Output (Max): 1.1A
Ratio - Input:Output: 1:1
Supplier Device Package: SOT-23F
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage, Short Circuit, UVLO
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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ZXMS6008FF-7 ZXMS6008FF-7 Diodes Incorporated ZXMS6008FF.pdf Description: LOW SIDE INTELLIFET SOT23F T&R 3
Packaging: Cut Tape (CT)
Package / Case: SOT-23-3 Flat Leads
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Low Side
Rds On (Typ): 500mOhm
Input Type: Non-Inverting
Voltage - Load: 60V
Voltage - Supply (Vcc/Vdd): 0V ~ 5.5V
Current - Output (Max): 1.1A
Ratio - Input:Output: 1:1
Supplier Device Package: SOT-23F
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage, Short Circuit, UVLO
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 2843 Stücke:
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14+1.3 EUR
21+0.88 EUR
100+0.59 EUR
500+0.47 EUR
1000+0.43 EUR
Mindestbestellmenge: 14
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AP7375-18Y-13 AP7375-18Y-13 Diodes Incorporated AP7375.pdf Description: IC REG LINEAR 1.8V 300MA SOT89-3
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 5 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: SOT-89-3
Voltage - Output (Min/Fixed): 1.8V
Control Features: Current Limit
Part Status: Active
Voltage Dropout (Max): 0.36V @ 100mA
Protection Features: Over Current, Over Temperature, Short Circuit
auf Bestellung 85000 Stücke:
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5000+0.19 EUR
25000+0.18 EUR
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AP7375-18Y-13 AP7375-18Y-13 Diodes Incorporated AP7375.pdf Description: IC REG LINEAR 1.8V 300MA SOT89-3
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 5 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: SOT-89-3
Voltage - Output (Min/Fixed): 1.8V
Control Features: Current Limit
Part Status: Active
Voltage Dropout (Max): 0.36V @ 100mA
Protection Features: Over Current, Over Temperature, Short Circuit
auf Bestellung 86884 Stücke:
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38+0.48 EUR
54+0.33 EUR
61+0.29 EUR
100+0.25 EUR
250+0.23 EUR
500+0.22 EUR
1000+0.21 EUR
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SD101B-T SD101B-T Diodes Incorporated SD101A-C.pdf Description: DIODE SCHOTTKY 50V 15MA DO35
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1 ns
Technology: Schottky
Capacitance @ Vr, F: 2.1pF @ 0V, 1MHz
Current - Average Rectified (Io): 15mA
Supplier Device Package: DO-35
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 15 mA
Current - Reverse Leakage @ Vr: 200 nA @ 40 V
Produkt ist nicht verfügbar
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BZT52C2V0TQ-7-F BZT52C2V0TQ-7-F Diodes Incorporated ds30502.pdf Description: ZENER DIODE SOD523 T&R 3K
Packaging: Tape & Reel (TR)
Tolerance: ±4.5%
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 2 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: SOD-523
Part Status: Active
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 150 µA @ 1 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 273000 Stücke:
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3000+0.064 EUR
6000+0.057 EUR
9000+0.054 EUR
15000+0.05 EUR
21000+0.047 EUR
30000+0.045 EUR
75000+0.041 EUR
Mindestbestellmenge: 3000
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BZT52C2V0TQ-7-F BZT52C2V0TQ-7-F Diodes Incorporated ds30502.pdf Description: ZENER DIODE SOD523 T&R 3K
Packaging: Cut Tape (CT)
Tolerance: ±4.5%
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 2 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: SOD-523
Part Status: Active
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 150 µA @ 1 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 275360 Stücke:
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42+0.42 EUR
62+0.29 EUR
126+0.14 EUR
500+0.12 EUR
1000+0.081 EUR
Mindestbestellmenge: 42
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1N4761A-T 1N4761A-T Diodes Incorporated ds18007.pdf Description: DIODE ZENER 75V 1W DO41
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 75 V
Impedance (Max) (Zzt): 175 Ohms
Supplier Device Package: DO-41
Part Status: Obsolete
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 56 V
Produkt ist nicht verfügbar
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1N4761A-T 1N4761A-T Diodes Incorporated ds18007.pdf Description: DIODE ZENER 75V 1W DO41
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 75 V
Impedance (Max) (Zzt): 175 Ohms
Supplier Device Package: DO-41
Part Status: Obsolete
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 56 V
Produkt ist nicht verfügbar
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NX71074001 Diodes Incorporated Description: XTAL OSC
Packaging: Bulk
Part Status: Obsolete
Produkt ist nicht verfügbar
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MMBD4448HADWQ-7-F MMBD4448HADWQ-7-F Diodes Incorporated MMBD4448HCQW_AQW_ADW_CDW_SDW_TW.pdf Description: DIODE ARRAY GP 80V 500MA SOT-363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 2 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 500mA (DC)
Supplier Device Package: SOT-363
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 100 nA @ 70 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)
39+0.46 EUR
57+0.31 EUR
100+0.2 EUR
500+0.17 EUR
1000+0.16 EUR
Mindestbestellmenge: 39
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ZXCT212QBDW-7 ZXCT212QBDW-7 Diodes Incorporated ZXCT21xQ.pdf Description: CM VOLTAGE OUTPUT SOT363 T&R 3K
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Sensing Method: High/Low-Side
Mounting Type: Surface Mount
Function: Current Monitor
Voltage - Input: 2.7V ~ 26V
Accuracy: ±0.8%
Operating Temperature: -40°C ~ 125°C (TA)
Supplier Device Package: SOT-363
Part Status: Active
auf Bestellung 3000 Stücke:
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3000+0.63 EUR
Mindestbestellmenge: 3000
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ZXCT212QBDW-7 ZXCT212QBDW-7 Diodes Incorporated ZXCT21xQ.pdf Description: CM VOLTAGE OUTPUT SOT363 T&R 3K
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Sensing Method: High/Low-Side
Mounting Type: Surface Mount
Function: Current Monitor
Voltage - Input: 2.7V ~ 26V
Accuracy: ±0.8%
Operating Temperature: -40°C ~ 125°C (TA)
Supplier Device Package: SOT-363
Part Status: Active
auf Bestellung 3000 Stücke:
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12+1.48 EUR
14+1.32 EUR
25+1.26 EUR
100+1.03 EUR
250+0.96 EUR
500+0.85 EUR
1000+0.67 EUR
Mindestbestellmenge: 12
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ZXCT215CDW-7 ZXCT215CDW-7 Diodes Incorporated ZXCT21x.pdf Description: CM VOLTAGE OUTPUT SOT363 T&R 3K
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Sensing Method: High/Low-Side
Mounting Type: Surface Mount
Function: Current Monitor
Voltage - Input: 2.7V ~ 26V
Accuracy: ±0.5%
Operating Temperature: -40°C ~ 125°C (TA)
Supplier Device Package: SOT-363
Part Status: Active
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3000+0.26 EUR
6000+0.25 EUR
Mindestbestellmenge: 3000
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ZXCT215CDW-7 ZXCT215CDW-7 Diodes Incorporated ZXCT21x.pdf Description: CM VOLTAGE OUTPUT SOT363 T&R 3K
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Sensing Method: High/Low-Side
Mounting Type: Surface Mount
Function: Current Monitor
Voltage - Input: 2.7V ~ 26V
Accuracy: ±0.5%
Operating Temperature: -40°C ~ 125°C (TA)
Supplier Device Package: SOT-363
Part Status: Active
auf Bestellung 93000 Stücke:
Lieferzeit 10-14 Tag (e)
12+1.48 EUR
20+0.89 EUR
25+0.73 EUR
100+0.56 EUR
250+0.47 EUR
500+0.42 EUR
1000+0.38 EUR
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DMN53D0LT-7 DMN53D0LT-7 Diodes Incorporated DMN53D0LT.pdf Description: DIODE
Packaging: Bulk
Package / Case: SOT-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V
Power Dissipation (Max): 300mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-523
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 46 pF @ 25 V
auf Bestellung 4776 Stücke:
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28+0.63 EUR
40+0.44 EUR
100+0.22 EUR
500+0.18 EUR
1000+0.14 EUR
2000+0.11 EUR
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DMN53D0LDW-7-52 DMN53D0LDW-7-52 Diodes Incorporated DMN53D0LDW.pdf Description: 2N7002 Family SOT363 T&R 3K
Packaging: Bulk
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 310mW (Ta)
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 360mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 25V
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V
FET Feature: Standard
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-363
Part Status: Active
Produkt ist nicht verfügbar
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DMN53D0LDWQ-7 DMN53D0LDWQ-7 Diodes Incorporated DMN53D0LDWQ.pdf Description: MOSFET 2N-CH 50V 0.46A SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 400mW (Ta)
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 460mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 49.5pF @ 25V
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-363
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 267000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.17 EUR
9000+0.15 EUR
75000+0.13 EUR
Mindestbestellmenge: 3000
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DMN53D0LDWQ-13 DMN53D0LDWQ-13 Diodes Incorporated DMN53D0LDWQ.pdf Description: MOSFET 2N-CH 50V 0.46A SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 400mW (Ta)
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 460mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 49.5pF @ 25V
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-363
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 530000 Stücke:
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10000+0.15 EUR
50000+0.13 EUR
Mindestbestellmenge: 10000
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DMJ65H650SCTI Diodes Incorporated Description: MOSFET N-CH 650V 10A ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 2.4A, 10V
Power Dissipation (Max): 31W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: ITO-220AB (Type TH)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 12.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 639 pF @ 100 V
Produkt ist nicht verfügbar
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DMWS120H100SM4 DMWS120H100SM4 Diodes Incorporated DMWS120H100SM4.pdf Description: SIC MOSFET BVDSS: >1000V TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37.2A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 20A, 15V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 5mA
Supplier Device Package: TO-247-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1516 pF @ 1000 V
auf Bestellung 1857 Stücke:
Lieferzeit 10-14 Tag (e)
1+30.73 EUR
30+19.38 EUR
120+18.1 EUR
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PI6ULS5V9306UEX PI6ULS5V9306UEX Diodes Incorporated PI6ULS5V9306.pdf Description: IC XLTR VL BIDIR 8-SOIC
Packaging: Tape & Reel (TR)
Features: Auto-Direction Sensing
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Open Drain
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Supplier Device Package: 8-SOIC
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 2
Voltage - VCCA: 1 V ~ 3.3 V
Voltage - VCCB: 1.8 V ~ 5.5 V
Part Status: Active
Number of Circuits: 1
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PI6ULS5V9306UEX PI6ULS5V9306UEX Diodes Incorporated PI6ULS5V9306.pdf Description: IC XLTR VL BIDIR 8-SOIC
Packaging: Cut Tape (CT)
Features: Auto-Direction Sensing
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Open Drain
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Supplier Device Package: 8-SOIC
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 2
Voltage - VCCA: 1 V ~ 3.3 V
Voltage - VCCB: 1.8 V ~ 5.5 V
Part Status: Active
Number of Circuits: 1
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B170-13-F-2477 Diodes Incorporated Description: DIODE
Packaging: Bulk
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SMA
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Last Time Buy
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 70 V
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BAR99TA BAR99TA Diodes Incorporated Description: DIODE SWITCHING SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Supplier Device Package: SOT-23-3
Part Status: Obsolete
Produkt ist nicht verfügbar
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SBRT10U60D1Q-13 SBRT10U60D1Q-13 Diodes Incorporated SBRT10U60D1Q.pdf Description: DIODE SBR 60V 10A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-252 (DPAK)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 10 A
Current - Reverse Leakage @ Vr: 400 µA @ 60 V
Grade: Automotive
Qualification: AEC-Q101
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SBRT10U60D1Q-13 SBRT10U60D1Q-13 Diodes Incorporated SBRT10U60D1Q.pdf Description: DIODE SBR 60V 10A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-252 (DPAK)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 10 A
Current - Reverse Leakage @ Vr: 400 µA @ 60 V
Grade: Automotive
Qualification: AEC-Q101
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LSC02120FW LSC02120FW Diodes Incorporated LSC02120FW.pdf Description: DIODE SIL CARB 1.2KV 2A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 105pF @ 1V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: ITO-220AC (Type WX)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 2 A
Current - Reverse Leakage @ Vr: 128 µA @ 1200 V
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MBR1040CT-LS Diodes Incorporated Description: SCHOTTKY RECTIFIER
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 5 A
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
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MBR1040-LS Diodes Incorporated Description: DIODE
Packaging: Bulk
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 400pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
Produkt ist nicht verfügbar
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DMN3060LCA3-7 DMN3060LCA3-7 Diodes Incorporated DMN3060LCA3.pdf Description: MOSFET N-CH 30V 3.9A X4DSN1006-3
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 500mA, 8V
Power Dissipation (Max): 790mW
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: X4-DSN1006-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.677 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 192 pF @ 15 V
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DMN3060LCA3-7 DMN3060LCA3-7 Diodes Incorporated DMN3060LCA3.pdf Description: MOSFET N-CH 30V 3.9A X4DSN1006-3
Packaging: Cut Tape (CT)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 500mA, 8V
Power Dissipation (Max): 790mW
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: X4-DSN1006-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.677 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 192 pF @ 15 V
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US1KSAFS-13 US1KSAFS-13 Diodes Incorporated US1KSAFS.pdf Description: DIODE STANDARD 800V 1A SMAFS
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SMA-FS
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
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US1KSAFS-13 US1KSAFS-13 Diodes Incorporated US1KSAFS.pdf Description: DIODE STANDARD 800V 1A SMAFS
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SMA-FS
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
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DMNH6022SSD-13 DMNH6022SSD-13 Diodes Incorporated DMNH6022SSD.pdf Description: MOSFET 2NCH 60V 7.1A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.5W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 7.1A, 22.6A
Input Capacitance (Ciss) (Max) @ Vds: 2127pF @ 25V
Rds On (Max) @ Id, Vgs: 27mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
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DMNH6022SSD-13 DMNH6022SSD-13 Diodes Incorporated DMNH6022SSD.pdf Description: MOSFET 2NCH 60V 7.1A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.5W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 7.1A, 22.6A
Input Capacitance (Ciss) (Max) @ Vds: 2127pF @ 25V
Rds On (Max) @ Id, Vgs: 27mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
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MMSZ5228BQ-7-F MMSZ5228BQ-7-F Diodes Incorporated ds18010.pdf Description: ZENER DIODE SOD123 T&R 3K
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 23 Ohms
Supplier Device Package: SOD-123
Part Status: Active
Power - Max: 370 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
Grade: Automotive
Qualification: AEC-Q101
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DDTC144EUA-7-F-50 DDTC144EUA-7-F-50 Diodes Incorporated ds30321.pdf Description: Prebias Transistor SOT323 T&R 3K
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Supplier Device Package: SOT-323
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Produkt ist nicht verfügbar
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DSC10A065 DSC10A065 Diodes Incorporated Description: SILICON CARBIDE RECTIFIER TO220A
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 436pF @ 100mV, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO220AC (Type WX)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A
Current - Reverse Leakage @ Vr: 250 µA @ 650 V
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BZX84C27Q-7-F BZX84C27Q-7-F Diodes Incorporated ds18001.pdf Description: DIODE ZENER 27V 300MW SOT23
Packaging: Tape & Reel (TR)
Tolerance: ±7.04%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: SOT-23-3
Part Status: Active
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 18.9 V
Grade: Automotive
Qualification: AEC-Q101
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DMN3016LDN-7 DMN3016LDN-7 Diodes Incorporated DMN3016LDN.pdf Description: MOSFET 2N-CH 30V 7.3A 8VDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7.3A
Input Capacitance (Ciss) (Max) @ Vds: 1415pF @ 15V
Rds On (Max) @ Id, Vgs: 20mOhm @ 11A, 10V
Gate Charge (Qg) (Max) @ Vgs: 25.1nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: V-DFN3030-8 (Type J)
Part Status: Active
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DMN3016LDN-7 DMN3016LDN-7 Diodes Incorporated DMN3016LDN.pdf Description: MOSFET 2N-CH 30V 7.3A 8VDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7.3A
Input Capacitance (Ciss) (Max) @ Vds: 1415pF @ 15V
Rds On (Max) @ Id, Vgs: 20mOhm @ 11A, 10V
Gate Charge (Qg) (Max) @ Vgs: 25.1nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: V-DFN3030-8 (Type J)
Part Status: Active
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DMTH4004SPSQ-13 DMTH4004SPSQ-13 Diodes Incorporated DMTH4004SPSQ.pdf Description: MOSFET N-CH 40V 31A PWRDI5060
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 90A, 10V
Power Dissipation (Max): 3.6W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 68.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4305 pF @ 25 V
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DMTH4004SPSQ-13 DMTH4004SPSQ-13 Diodes Incorporated DMTH4004SPSQ.pdf Description: MOSFET N-CH 40V 31A PWRDI5060
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 90A, 10V
Power Dissipation (Max): 3.6W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 68.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4305 pF @ 25 V
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DMTH46M7SFVWQ-7 DMTH46M7SFVWQ-7 Diodes Incorporated DMTH46M7SFVWQ.pdf Description: MOSFET BVDSS: 31V~40V POWERDI333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16.3A (Ta), 67.2A (Tc)
Rds On (Max) @ Id, Vgs: 7.4mOhm @ 20A, 10V
Power Dissipation (Max): 3.2W (Ta), 54.5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 14.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1315 pF @ 20 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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DMTH46M7SFVWQ-7 DMTH46M7SFVWQ-7 Diodes Incorporated DMTH46M7SFVWQ.pdf Description: MOSFET BVDSS: 31V~40V POWERDI333
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16.3A (Ta), 67.2A (Tc)
Rds On (Max) @ Id, Vgs: 7.4mOhm @ 20A, 10V
Power Dissipation (Max): 3.2W (Ta), 54.5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 14.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1315 pF @ 20 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1325 Stücke:
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12+1.55 EUR
17+1.08 EUR
100+0.73 EUR
500+0.59 EUR
1000+0.54 EUR
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DMTH4014LFVWQ-7 DMTH4014LFVWQ-7 Diodes Incorporated DMTH4014LFVWQ.pdf Description: MOSFET BVDSS: 31V~40V POWERDI333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta), 49.8A (Tc)
Rds On (Max) @ Id, Vgs: 13.7mOhm @ 20A, 10V
Power Dissipation (Max): 3.1W
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 11.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 20 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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DMTH4014LFVWQ-7 DMTH4014LFVWQ-7 Diodes Incorporated DMTH4014LFVWQ.pdf Description: MOSFET BVDSS: 31V~40V POWERDI333
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta), 49.8A (Tc)
Rds On (Max) @ Id, Vgs: 13.7mOhm @ 20A, 10V
Power Dissipation (Max): 3.1W
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 11.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 20 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 885 Stücke:
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500+0.45 EUR
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DMTH43M8LK3Q-13 DMTH43M8LK3Q-13 Diodes Incorporated DMTH43M8LK3Q.pdf Description: MOSFET N-CHANNEL 40V 100A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 20A, 10V
Power Dissipation (Max): 88W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 38.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2693 pF @ 20 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1772500 Stücke:
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DMTH43M8LK3Q-13 DMTH43M8LK3Q-13 Diodes Incorporated DMTH43M8LK3Q.pdf Description: MOSFET N-CHANNEL 40V 100A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 20A, 10V
Power Dissipation (Max): 88W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 38.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2693 pF @ 20 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1774988 Stücke:
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DMTH41M8SPSQ-13 DMTH41M8SPSQ-13 Diodes Incorporated DMTH41M8SPSQ.pdf Description: MOSFET N-CH 40V 100A PWRDI5060-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 30A, 10V
Power Dissipation (Max): 3.03W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type K)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 79.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6968 pF @ 20 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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DMTH41M8SPSQ-13 DMTH41M8SPSQ-13 Diodes Incorporated DMTH41M8SPSQ.pdf Description: MOSFET N-CH 40V 100A PWRDI5060-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 30A, 10V
Power Dissipation (Max): 3.03W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type K)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 79.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6968 pF @ 20 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1187 Stücke:
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10+2.49 EUR
100+1.74 EUR
500+1.45 EUR
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DMTH4008LFDFWQ-7 DMTH4008LFDFWQ-7 Diodes Incorporated DMTH4008LFDFWQ.pdf Description: MOSFET N-CH 40V 11.6A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.6A (Ta)
Rds On (Max) @ Id, Vgs: 11.5mOhm @ 10A, 10V
Power Dissipation (Max): 990mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: U-DFN2020-6 (SWP) (Type F)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 14.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1030 pF @ 20 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.36 EUR
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DMTH4008LFDFWQ-7 DMTH4008LFDFWQ-7 Diodes Incorporated DMTH4008LFDFWQ.pdf Description: MOSFET N-CH 40V 11.6A 6UDFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.6A (Ta)
Rds On (Max) @ Id, Vgs: 11.5mOhm @ 10A, 10V
Power Dissipation (Max): 990mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: U-DFN2020-6 (SWP) (Type F)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 14.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1030 pF @ 20 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 4295 Stücke:
Lieferzeit 10-14 Tag (e)
12+1.53 EUR
19+0.95 EUR
100+0.62 EUR
500+0.48 EUR
1000+0.43 EUR
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DMTH43M8LFGQ-13 DMTH43M8LFGQ-13 Diodes Incorporated DMTH43M8LFGQ.pdf Description: MOSFET N-CH 40V PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V
Power Dissipation (Max): 2.62W (Ta), 65.2W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI3333-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 40.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2798 pF @ 20 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.7 EUR
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DMTH43M8LFGQ-13 DMTH43M8LFGQ-13 Diodes Incorporated DMTH43M8LFGQ.pdf Description: MOSFET N-CH 40V PWRDI3333
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V
Power Dissipation (Max): 2.62W (Ta), 65.2W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI3333-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 40.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2798 pF @ 20 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 4943 Stücke:
Lieferzeit 10-14 Tag (e)
8+2.2 EUR
12+1.53 EUR
100+1.04 EUR
500+0.83 EUR
1000+0.75 EUR
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ZXMS81090SPQ-13 ZXMS81090SPQ.pdf
ZXMS81090SPQ-13
Hersteller: Diodes Incorporated
Description: HIGH SIDE INTELLIFET SO-8EP T&R
Packaging: Cut Tape (CT)
Features: Slew Rate Controlled
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 90mOhm
Input Type: Non-Inverting
Voltage - Load: 5V ~ 28V
Voltage - Supply (Vcc/Vdd): 5V ~ Not Required
Current - Output (Max): 3A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-SO-EP (Type E)
Fault Protection: Current Limiting (Adjustable), Open Load Detect, Over Temperature, Over Voltage, Reverse Battery, Short Circuit, UVLO
Part Status: Active
auf Bestellung 2155 Stücke:
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Anzahl Preis
7+2.8 EUR
10+1.78 EUR
100+1.2 EUR
500+0.95 EUR
1000+0.87 EUR
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ZXMS6008FFQ-7 ZXMS6008FFQ.pdf
ZXMS6008FFQ-7
Hersteller: Diodes Incorporated
Description: LOW SIDE INTELLIFET SOT23F T&R 3
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-3 Flat Leads
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Low Side
Rds On (Typ): 500mOhm
Input Type: Non-Inverting
Voltage - Load: 60V
Voltage - Supply (Vcc/Vdd): 0V ~ 5.5V
Current - Output (Max): 1.1A
Ratio - Input:Output: 1:1
Supplier Device Package: SOT-23F
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage, Short Circuit, UVLO
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 141000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.32 EUR
6000+0.29 EUR
9000+0.28 EUR
15000+0.26 EUR
Mindestbestellmenge: 3000
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ZXMS6008FFQ-7 ZXMS6008FFQ.pdf
ZXMS6008FFQ-7
Hersteller: Diodes Incorporated
Description: LOW SIDE INTELLIFET SOT23F T&R 3
Packaging: Cut Tape (CT)
Package / Case: SOT-23-3 Flat Leads
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Low Side
Rds On (Typ): 500mOhm
Input Type: Non-Inverting
Voltage - Load: 60V
Voltage - Supply (Vcc/Vdd): 0V ~ 5.5V
Current - Output (Max): 1.1A
Ratio - Input:Output: 1:1
Supplier Device Package: SOT-23F
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage, Short Circuit, UVLO
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 141478 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
14+1.34 EUR
22+0.83 EUR
100+0.54 EUR
500+0.41 EUR
1000+0.37 EUR
Mindestbestellmenge: 14
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ZXMS6004DGQ-13 ZXMS6004DGQ.pdf
ZXMS6004DGQ-13
Hersteller: Diodes Incorporated
Description: LOW SIDE INTELLIFET SOT223
Packaging: Cut Tape (CT)
Features: Auto Restart
Package / Case: TO-261-4, TO-261AA
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Low Side
Rds On (Typ): 350mOhm
Input Type: Non-Inverting
Voltage - Load: 60V (Max)
Voltage - Supply (Vcc/Vdd): 3.3V, 5V
Current - Output (Max): 1.3A
Ratio - Input:Output: 1:1
Supplier Device Package: SOT-223-3
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage, Short Circuit
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 67478 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
12+1.55 EUR
16+1.11 EUR
25+1 EUR
100+0.88 EUR
250+0.83 EUR
500+0.79 EUR
1000+0.76 EUR
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ZXMS6008FF-7 ZXMS6008FF.pdf
ZXMS6008FF-7
Hersteller: Diodes Incorporated
Description: LOW SIDE INTELLIFET SOT23F T&R 3
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-3 Flat Leads
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Low Side
Rds On (Typ): 500mOhm
Input Type: Non-Inverting
Voltage - Load: 60V
Voltage - Supply (Vcc/Vdd): 0V ~ 5.5V
Current - Output (Max): 1.1A
Ratio - Input:Output: 1:1
Supplier Device Package: SOT-23F
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage, Short Circuit, UVLO
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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ZXMS6008FF-7 ZXMS6008FF.pdf
ZXMS6008FF-7
Hersteller: Diodes Incorporated
Description: LOW SIDE INTELLIFET SOT23F T&R 3
Packaging: Cut Tape (CT)
Package / Case: SOT-23-3 Flat Leads
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Low Side
Rds On (Typ): 500mOhm
Input Type: Non-Inverting
Voltage - Load: 60V
Voltage - Supply (Vcc/Vdd): 0V ~ 5.5V
Current - Output (Max): 1.1A
Ratio - Input:Output: 1:1
Supplier Device Package: SOT-23F
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage, Short Circuit, UVLO
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 2843 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
14+1.3 EUR
21+0.88 EUR
100+0.59 EUR
500+0.47 EUR
1000+0.43 EUR
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AP7375-18Y-13 AP7375.pdf
AP7375-18Y-13
Hersteller: Diodes Incorporated
Description: IC REG LINEAR 1.8V 300MA SOT89-3
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 5 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: SOT-89-3
Voltage - Output (Min/Fixed): 1.8V
Control Features: Current Limit
Part Status: Active
Voltage Dropout (Max): 0.36V @ 100mA
Protection Features: Over Current, Over Temperature, Short Circuit
auf Bestellung 85000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.2 EUR
5000+0.19 EUR
25000+0.18 EUR
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AP7375-18Y-13 AP7375.pdf
AP7375-18Y-13
Hersteller: Diodes Incorporated
Description: IC REG LINEAR 1.8V 300MA SOT89-3
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 5 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: SOT-89-3
Voltage - Output (Min/Fixed): 1.8V
Control Features: Current Limit
Part Status: Active
Voltage Dropout (Max): 0.36V @ 100mA
Protection Features: Over Current, Over Temperature, Short Circuit
auf Bestellung 86884 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
38+0.48 EUR
54+0.33 EUR
61+0.29 EUR
100+0.25 EUR
250+0.23 EUR
500+0.22 EUR
1000+0.21 EUR
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SD101B-T SD101A-C.pdf
SD101B-T
Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 50V 15MA DO35
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1 ns
Technology: Schottky
Capacitance @ Vr, F: 2.1pF @ 0V, 1MHz
Current - Average Rectified (Io): 15mA
Supplier Device Package: DO-35
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 15 mA
Current - Reverse Leakage @ Vr: 200 nA @ 40 V
Produkt ist nicht verfügbar
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BZT52C2V0TQ-7-F ds30502.pdf
BZT52C2V0TQ-7-F
Hersteller: Diodes Incorporated
Description: ZENER DIODE SOD523 T&R 3K
Packaging: Tape & Reel (TR)
Tolerance: ±4.5%
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 2 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: SOD-523
Part Status: Active
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 150 µA @ 1 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 273000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.064 EUR
6000+0.057 EUR
9000+0.054 EUR
15000+0.05 EUR
21000+0.047 EUR
30000+0.045 EUR
75000+0.041 EUR
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BZT52C2V0TQ-7-F ds30502.pdf
BZT52C2V0TQ-7-F
Hersteller: Diodes Incorporated
Description: ZENER DIODE SOD523 T&R 3K
Packaging: Cut Tape (CT)
Tolerance: ±4.5%
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 2 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: SOD-523
Part Status: Active
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 150 µA @ 1 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 275360 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
42+0.42 EUR
62+0.29 EUR
126+0.14 EUR
500+0.12 EUR
1000+0.081 EUR
Mindestbestellmenge: 42
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1N4761A-T ds18007.pdf
1N4761A-T
Hersteller: Diodes Incorporated
Description: DIODE ZENER 75V 1W DO41
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 75 V
Impedance (Max) (Zzt): 175 Ohms
Supplier Device Package: DO-41
Part Status: Obsolete
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 56 V
Produkt ist nicht verfügbar
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1N4761A-T ds18007.pdf
1N4761A-T
Hersteller: Diodes Incorporated
Description: DIODE ZENER 75V 1W DO41
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 75 V
Impedance (Max) (Zzt): 175 Ohms
Supplier Device Package: DO-41
Part Status: Obsolete
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 56 V
Produkt ist nicht verfügbar
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NX71074001
Hersteller: Diodes Incorporated
Description: XTAL OSC
Packaging: Bulk
Part Status: Obsolete
Produkt ist nicht verfügbar
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MMBD4448HADWQ-7-F MMBD4448HCQW_AQW_ADW_CDW_SDW_TW.pdf
MMBD4448HADWQ-7-F
Hersteller: Diodes Incorporated
Description: DIODE ARRAY GP 80V 500MA SOT-363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 2 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 500mA (DC)
Supplier Device Package: SOT-363
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 100 nA @ 70 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
39+0.46 EUR
57+0.31 EUR
100+0.2 EUR
500+0.17 EUR
1000+0.16 EUR
Mindestbestellmenge: 39
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ZXCT212QBDW-7 ZXCT21xQ.pdf
ZXCT212QBDW-7
Hersteller: Diodes Incorporated
Description: CM VOLTAGE OUTPUT SOT363 T&R 3K
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Sensing Method: High/Low-Side
Mounting Type: Surface Mount
Function: Current Monitor
Voltage - Input: 2.7V ~ 26V
Accuracy: ±0.8%
Operating Temperature: -40°C ~ 125°C (TA)
Supplier Device Package: SOT-363
Part Status: Active
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.63 EUR
Mindestbestellmenge: 3000
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ZXCT212QBDW-7 ZXCT21xQ.pdf
ZXCT212QBDW-7
Hersteller: Diodes Incorporated
Description: CM VOLTAGE OUTPUT SOT363 T&R 3K
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Sensing Method: High/Low-Side
Mounting Type: Surface Mount
Function: Current Monitor
Voltage - Input: 2.7V ~ 26V
Accuracy: ±0.8%
Operating Temperature: -40°C ~ 125°C (TA)
Supplier Device Package: SOT-363
Part Status: Active
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
12+1.48 EUR
14+1.32 EUR
25+1.26 EUR
100+1.03 EUR
250+0.96 EUR
500+0.85 EUR
1000+0.67 EUR
Mindestbestellmenge: 12
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ZXCT215CDW-7 ZXCT21x.pdf
ZXCT215CDW-7
Hersteller: Diodes Incorporated
Description: CM VOLTAGE OUTPUT SOT363 T&R 3K
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Sensing Method: High/Low-Side
Mounting Type: Surface Mount
Function: Current Monitor
Voltage - Input: 2.7V ~ 26V
Accuracy: ±0.5%
Operating Temperature: -40°C ~ 125°C (TA)
Supplier Device Package: SOT-363
Part Status: Active
auf Bestellung 93000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.26 EUR
6000+0.25 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
ZXCT215CDW-7 ZXCT21x.pdf
ZXCT215CDW-7
Hersteller: Diodes Incorporated
Description: CM VOLTAGE OUTPUT SOT363 T&R 3K
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Sensing Method: High/Low-Side
Mounting Type: Surface Mount
Function: Current Monitor
Voltage - Input: 2.7V ~ 26V
Accuracy: ±0.5%
Operating Temperature: -40°C ~ 125°C (TA)
Supplier Device Package: SOT-363
Part Status: Active
auf Bestellung 93000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
12+1.48 EUR
20+0.89 EUR
25+0.73 EUR
100+0.56 EUR
250+0.47 EUR
500+0.42 EUR
1000+0.38 EUR
Mindestbestellmenge: 12
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DMN53D0LT-7 DMN53D0LT.pdf
DMN53D0LT-7
Hersteller: Diodes Incorporated
Description: DIODE
Packaging: Bulk
Package / Case: SOT-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V
Power Dissipation (Max): 300mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-523
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 46 pF @ 25 V
auf Bestellung 4776 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
28+0.63 EUR
40+0.44 EUR
100+0.22 EUR
500+0.18 EUR
1000+0.14 EUR
2000+0.11 EUR
Mindestbestellmenge: 28
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DMN53D0LDW-7-52 DMN53D0LDW.pdf
DMN53D0LDW-7-52
Hersteller: Diodes Incorporated
Description: 2N7002 Family SOT363 T&R 3K
Packaging: Bulk
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 310mW (Ta)
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 360mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 25V
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V
FET Feature: Standard
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-363
Part Status: Active
Produkt ist nicht verfügbar
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DMN53D0LDWQ-7 DMN53D0LDWQ.pdf
DMN53D0LDWQ-7
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 50V 0.46A SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 400mW (Ta)
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 460mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 49.5pF @ 25V
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-363
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 267000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.17 EUR
9000+0.15 EUR
75000+0.13 EUR
Mindestbestellmenge: 3000
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DMN53D0LDWQ-13 DMN53D0LDWQ.pdf
DMN53D0LDWQ-13
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 50V 0.46A SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 400mW (Ta)
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 460mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 49.5pF @ 25V
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-363
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 530000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10000+0.15 EUR
50000+0.13 EUR
Mindestbestellmenge: 10000
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DMJ65H650SCTI
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 650V 10A ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 2.4A, 10V
Power Dissipation (Max): 31W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: ITO-220AB (Type TH)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 12.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 639 pF @ 100 V
Produkt ist nicht verfügbar
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DMWS120H100SM4 DMWS120H100SM4.pdf
DMWS120H100SM4
Hersteller: Diodes Incorporated
Description: SIC MOSFET BVDSS: >1000V TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37.2A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 20A, 15V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 5mA
Supplier Device Package: TO-247-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1516 pF @ 1000 V
auf Bestellung 1857 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+30.73 EUR
30+19.38 EUR
120+18.1 EUR
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PI6ULS5V9306UEX PI6ULS5V9306.pdf
PI6ULS5V9306UEX
Hersteller: Diodes Incorporated
Description: IC XLTR VL BIDIR 8-SOIC
Packaging: Tape & Reel (TR)
Features: Auto-Direction Sensing
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Open Drain
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Supplier Device Package: 8-SOIC
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 2
Voltage - VCCA: 1 V ~ 3.3 V
Voltage - VCCB: 1.8 V ~ 5.5 V
Part Status: Active
Number of Circuits: 1
Produkt ist nicht verfügbar
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PI6ULS5V9306UEX PI6ULS5V9306.pdf
PI6ULS5V9306UEX
Hersteller: Diodes Incorporated
Description: IC XLTR VL BIDIR 8-SOIC
Packaging: Cut Tape (CT)
Features: Auto-Direction Sensing
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Open Drain
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Supplier Device Package: 8-SOIC
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 2
Voltage - VCCA: 1 V ~ 3.3 V
Voltage - VCCB: 1.8 V ~ 5.5 V
Part Status: Active
Number of Circuits: 1
auf Bestellung 932 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
12+1.58 EUR
16+1.14 EUR
25+1.03 EUR
100+0.9 EUR
250+0.85 EUR
500+0.81 EUR
Mindestbestellmenge: 12
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B170-13-F-2477
Hersteller: Diodes Incorporated
Description: DIODE
Packaging: Bulk
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SMA
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Last Time Buy
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 70 V
Produkt ist nicht verfügbar
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BAR99TA
BAR99TA
Hersteller: Diodes Incorporated
Description: DIODE SWITCHING SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Supplier Device Package: SOT-23-3
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SBRT10U60D1Q-13 SBRT10U60D1Q.pdf
SBRT10U60D1Q-13
Hersteller: Diodes Incorporated
Description: DIODE SBR 60V 10A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-252 (DPAK)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 10 A
Current - Reverse Leakage @ Vr: 400 µA @ 60 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.55 EUR
Mindestbestellmenge: 2500
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SBRT10U60D1Q-13 SBRT10U60D1Q.pdf
SBRT10U60D1Q-13
Hersteller: Diodes Incorporated
Description: DIODE SBR 60V 10A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-252 (DPAK)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 10 A
Current - Reverse Leakage @ Vr: 400 µA @ 60 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 4770 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
12+1.55 EUR
17+1.09 EUR
100+0.91 EUR
500+0.72 EUR
1000+0.65 EUR
Mindestbestellmenge: 12
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LSC02120FW LSC02120FW.pdf
LSC02120FW
Hersteller: Diodes Incorporated
Description: DIODE SIL CARB 1.2KV 2A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 105pF @ 1V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: ITO-220AC (Type WX)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 2 A
Current - Reverse Leakage @ Vr: 128 µA @ 1200 V
auf Bestellung 3994 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.03 EUR
10+4.53 EUR
100+3.71 EUR
500+3.16 EUR
1000+2.66 EUR
2000+2.53 EUR
Mindestbestellmenge: 4
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MBR1040CT-LS
Hersteller: Diodes Incorporated
Description: SCHOTTKY RECTIFIER
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 5 A
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
Produkt ist nicht verfügbar
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MBR1040-LS
Hersteller: Diodes Incorporated
Description: DIODE
Packaging: Bulk
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 400pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
Produkt ist nicht verfügbar
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DMN3060LCA3-7 DMN3060LCA3.pdf
DMN3060LCA3-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 3.9A X4DSN1006-3
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 500mA, 8V
Power Dissipation (Max): 790mW
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: X4-DSN1006-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.677 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 192 pF @ 15 V
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10000+0.15 EUR
20000+0.14 EUR
Mindestbestellmenge: 10000
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DMN3060LCA3-7 DMN3060LCA3.pdf
DMN3060LCA3-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 3.9A X4DSN1006-3
Packaging: Cut Tape (CT)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 500mA, 8V
Power Dissipation (Max): 790mW
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: X4-DSN1006-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.677 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 192 pF @ 15 V
auf Bestellung 20403 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
22+0.81 EUR
36+0.5 EUR
100+0.32 EUR
500+0.24 EUR
1000+0.21 EUR
2000+0.19 EUR
5000+0.17 EUR
Mindestbestellmenge: 22
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US1KSAFS-13 US1KSAFS.pdf
US1KSAFS-13
Hersteller: Diodes Incorporated
Description: DIODE STANDARD 800V 1A SMAFS
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SMA-FS
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Produkt ist nicht verfügbar
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US1KSAFS-13 US1KSAFS.pdf
US1KSAFS-13
Hersteller: Diodes Incorporated
Description: DIODE STANDARD 800V 1A SMAFS
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SMA-FS
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
auf Bestellung 9497 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
31+0.58 EUR
49+0.36 EUR
100+0.21 EUR
500+0.17 EUR
1000+0.14 EUR
5000+0.13 EUR
Mindestbestellmenge: 31
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DMNH6022SSD-13 DMNH6022SSD.pdf
DMNH6022SSD-13
Hersteller: Diodes Incorporated
Description: MOSFET 2NCH 60V 7.1A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.5W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 7.1A, 22.6A
Input Capacitance (Ciss) (Max) @ Vds: 2127pF @ 25V
Rds On (Max) @ Id, Vgs: 27mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Produkt ist nicht verfügbar
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DMNH6022SSD-13 DMNH6022SSD.pdf
DMNH6022SSD-13
Hersteller: Diodes Incorporated
Description: MOSFET 2NCH 60V 7.1A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.5W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 7.1A, 22.6A
Input Capacitance (Ciss) (Max) @ Vds: 2127pF @ 25V
Rds On (Max) @ Id, Vgs: 27mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
auf Bestellung 2497 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
13+1.46 EUR
14+1.31 EUR
100+1.02 EUR
500+0.84 EUR
1000+0.67 EUR
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MMSZ5228BQ-7-F ds18010.pdf
MMSZ5228BQ-7-F
Hersteller: Diodes Incorporated
Description: ZENER DIODE SOD123 T&R 3K
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 23 Ohms
Supplier Device Package: SOD-123
Part Status: Active
Power - Max: 370 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.058 EUR
6000+0.055 EUR
9000+0.047 EUR
30000+0.043 EUR
Mindestbestellmenge: 3000
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DDTC144EUA-7-F-50 ds30321.pdf
DDTC144EUA-7-F-50
Hersteller: Diodes Incorporated
Description: Prebias Transistor SOT323 T&R 3K
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Supplier Device Package: SOT-323
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Produkt ist nicht verfügbar
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DSC10A065
DSC10A065
Hersteller: Diodes Incorporated
Description: SILICON CARBIDE RECTIFIER TO220A
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 436pF @ 100mV, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO220AC (Type WX)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A
Current - Reverse Leakage @ Vr: 250 µA @ 650 V
auf Bestellung 82 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+8.03 EUR
10+6.74 EUR
Mindestbestellmenge: 3
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BZX84C27Q-7-F ds18001.pdf
BZX84C27Q-7-F
Hersteller: Diodes Incorporated
Description: DIODE ZENER 27V 300MW SOT23
Packaging: Tape & Reel (TR)
Tolerance: ±7.04%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: SOT-23-3
Part Status: Active
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 18.9 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 72000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.039 EUR
6000+0.035 EUR
9000+0.03 EUR
Mindestbestellmenge: 3000
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DMN3016LDN-7 DMN3016LDN.pdf
DMN3016LDN-7
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 30V 7.3A 8VDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7.3A
Input Capacitance (Ciss) (Max) @ Vds: 1415pF @ 15V
Rds On (Max) @ Id, Vgs: 20mOhm @ 11A, 10V
Gate Charge (Qg) (Max) @ Vgs: 25.1nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: V-DFN3030-8 (Type J)
Part Status: Active
auf Bestellung 162000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.3 EUR
6000+0.28 EUR
9000+0.26 EUR
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DMN3016LDN-7 DMN3016LDN.pdf
DMN3016LDN-7
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 30V 7.3A 8VDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7.3A
Input Capacitance (Ciss) (Max) @ Vds: 1415pF @ 15V
Rds On (Max) @ Id, Vgs: 20mOhm @ 11A, 10V
Gate Charge (Qg) (Max) @ Vgs: 25.1nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: V-DFN3030-8 (Type J)
Part Status: Active
auf Bestellung 163878 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
20+0.88 EUR
24+0.76 EUR
100+0.53 EUR
500+0.41 EUR
1000+0.33 EUR
Mindestbestellmenge: 20
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DMTH4004SPSQ-13 DMTH4004SPSQ.pdf
DMTH4004SPSQ-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 40V 31A PWRDI5060
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 90A, 10V
Power Dissipation (Max): 3.6W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 68.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4305 pF @ 25 V
auf Bestellung 440000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.97 EUR
5000+0.93 EUR
12500+0.89 EUR
Mindestbestellmenge: 2500
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DMTH4004SPSQ-13 DMTH4004SPSQ.pdf
DMTH4004SPSQ-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 40V 31A PWRDI5060
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 90A, 10V
Power Dissipation (Max): 3.6W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 68.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4305 pF @ 25 V
auf Bestellung 442494 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+2.18 EUR
Mindestbestellmenge: 9
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DMTH46M7SFVWQ-7 DMTH46M7SFVWQ.pdf
DMTH46M7SFVWQ-7
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 31V~40V POWERDI333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16.3A (Ta), 67.2A (Tc)
Rds On (Max) @ Id, Vgs: 7.4mOhm @ 20A, 10V
Power Dissipation (Max): 3.2W (Ta), 54.5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 14.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1315 pF @ 20 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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DMTH46M7SFVWQ-7 DMTH46M7SFVWQ.pdf
DMTH46M7SFVWQ-7
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 31V~40V POWERDI333
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16.3A (Ta), 67.2A (Tc)
Rds On (Max) @ Id, Vgs: 7.4mOhm @ 20A, 10V
Power Dissipation (Max): 3.2W (Ta), 54.5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 14.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1315 pF @ 20 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1325 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
12+1.55 EUR
17+1.08 EUR
100+0.73 EUR
500+0.59 EUR
1000+0.54 EUR
Mindestbestellmenge: 12
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DMTH4014LFVWQ-7 DMTH4014LFVWQ.pdf
DMTH4014LFVWQ-7
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 31V~40V POWERDI333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta), 49.8A (Tc)
Rds On (Max) @ Id, Vgs: 13.7mOhm @ 20A, 10V
Power Dissipation (Max): 3.1W
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 11.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 20 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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DMTH4014LFVWQ-7 DMTH4014LFVWQ.pdf
DMTH4014LFVWQ-7
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 31V~40V POWERDI333
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta), 49.8A (Tc)
Rds On (Max) @ Id, Vgs: 13.7mOhm @ 20A, 10V
Power Dissipation (Max): 3.1W
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 11.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 20 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 885 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
13+1.37 EUR
21+0.86 EUR
100+0.57 EUR
500+0.45 EUR
Mindestbestellmenge: 13
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DMTH43M8LK3Q-13 DMTH43M8LK3Q.pdf
DMTH43M8LK3Q-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CHANNEL 40V 100A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 20A, 10V
Power Dissipation (Max): 88W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 38.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2693 pF @ 20 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1772500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.56 EUR
5000+0.54 EUR
7500+0.53 EUR
Mindestbestellmenge: 2500
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DMTH43M8LK3Q-13 DMTH43M8LK3Q.pdf
DMTH43M8LK3Q-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CHANNEL 40V 100A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 20A, 10V
Power Dissipation (Max): 88W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 38.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2693 pF @ 20 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1774988 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
13+1.41 EUR
16+1.14 EUR
100+0.83 EUR
500+0.72 EUR
1000+0.65 EUR
Mindestbestellmenge: 13
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DMTH41M8SPSQ-13 DMTH41M8SPSQ.pdf
DMTH41M8SPSQ-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 40V 100A PWRDI5060-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 30A, 10V
Power Dissipation (Max): 3.03W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type K)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 79.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6968 pF @ 20 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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DMTH41M8SPSQ-13 DMTH41M8SPSQ.pdf
DMTH41M8SPSQ-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 40V 100A PWRDI5060-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 30A, 10V
Power Dissipation (Max): 3.03W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type K)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 79.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6968 pF @ 20 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1187 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.78 EUR
10+2.49 EUR
100+1.74 EUR
500+1.45 EUR
Mindestbestellmenge: 5
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DMTH4008LFDFWQ-7 DMTH4008LFDFWQ.pdf
DMTH4008LFDFWQ-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 40V 11.6A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.6A (Ta)
Rds On (Max) @ Id, Vgs: 11.5mOhm @ 10A, 10V
Power Dissipation (Max): 990mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: U-DFN2020-6 (SWP) (Type F)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 14.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1030 pF @ 20 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.36 EUR
Mindestbestellmenge: 3000
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DMTH4008LFDFWQ-7 DMTH4008LFDFWQ.pdf
DMTH4008LFDFWQ-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 40V 11.6A 6UDFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.6A (Ta)
Rds On (Max) @ Id, Vgs: 11.5mOhm @ 10A, 10V
Power Dissipation (Max): 990mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: U-DFN2020-6 (SWP) (Type F)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 14.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1030 pF @ 20 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 4295 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
12+1.53 EUR
19+0.95 EUR
100+0.62 EUR
500+0.48 EUR
1000+0.43 EUR
Mindestbestellmenge: 12
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DMTH43M8LFGQ-13 DMTH43M8LFGQ.pdf
DMTH43M8LFGQ-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 40V PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V
Power Dissipation (Max): 2.62W (Ta), 65.2W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI3333-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 40.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2798 pF @ 20 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.7 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
DMTH43M8LFGQ-13 DMTH43M8LFGQ.pdf
DMTH43M8LFGQ-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 40V PWRDI3333
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V
Power Dissipation (Max): 2.62W (Ta), 65.2W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI3333-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 40.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2798 pF @ 20 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 4943 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.2 EUR
12+1.53 EUR
100+1.04 EUR
500+0.83 EUR
1000+0.75 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
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