Produkte > DIODES INCORPORATED > Alle Produkte des Herstellers DIODES INCORPORATED (79029) > Seite 545 nach 1318

Wählen Sie Seite:   [  << Vorherige Seite ]  1 131 262 393 524 540 541 542 543 544 545 546 547 548 549 550 655 786 917 1048 1179 1310 1318  [ Nächste Seite >> ]
Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
DMTH43M8LK3-13 DMTH43M8LK3-13 Diodes Incorporated DMTH43M8LK3.pdf Description: MOSFET N-CHANNEL 40V 100A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 20A, 10V
Power Dissipation (Max): 88W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 38.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2693 pF @ 20 V
auf Bestellung 4985 Stücke:
Lieferzeit 10-14 Tag (e)
9+2.15 EUR
13+1.36 EUR
100+0.92 EUR
500+0.74 EUR
1000+0.68 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
DMP45H4D9HK3-13 DMP45H4D9HK3-13 Diodes Incorporated DMP45H4D9HK3.pdf Description: MOSFET P-CH 450V 4.7A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc)
Rds On (Max) @ Id, Vgs: 4.9Ohm @ 1.05A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 450 V
Gate Charge (Qg) (Max) @ Vgs: 13.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 564 pF @ 25 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
2500+0.55 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
DMP45H4D9HK3-13 DMP45H4D9HK3-13 Diodes Incorporated DMP45H4D9HK3.pdf Description: MOSFET P-CH 450V 4.7A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc)
Rds On (Max) @ Id, Vgs: 4.9Ohm @ 1.05A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 450 V
Gate Charge (Qg) (Max) @ Vgs: 13.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 564 pF @ 25 V
auf Bestellung 4006 Stücke:
Lieferzeit 10-14 Tag (e)
11+1.72 EUR
16+1.17 EUR
100+0.87 EUR
500+0.7 EUR
1000+0.64 EUR
Mindestbestellmenge: 11
Im Einkaufswagen  Stück im Wert von  UAH
DMN6017SK3-13 DMN6017SK3-13 Diodes Incorporated DMN6017SK3.pdf Description: MOSFET N-CHANNEL 60V 43A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 6A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2711 pF @ 15 V
auf Bestellung 12500 Stücke:
Lieferzeit 10-14 Tag (e)
2500+0.39 EUR
5000+0.36 EUR
7500+0.34 EUR
12500+0.32 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
DMN6017SK3-13 DMN6017SK3-13 Diodes Incorporated DMN6017SK3.pdf Description: MOSFET N-CHANNEL 60V 43A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 6A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2711 pF @ 15 V
auf Bestellung 13698 Stücke:
Lieferzeit 10-14 Tag (e)
12+1.55 EUR
19+0.97 EUR
100+0.63 EUR
500+0.49 EUR
1000+0.44 EUR
Mindestbestellmenge: 12
Im Einkaufswagen  Stück im Wert von  UAH
DMNH10H028SK3Q-13 DMNH10H028SK3Q-13 Diodes Incorporated DMNH10H028SK3Q.pdf Description: MOSFET N-CH 100V 55A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 20A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2245 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
2500+1.19 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
DMNH10H028SK3Q-13 DMNH10H028SK3Q-13 Diodes Incorporated DMNH10H028SK3Q.pdf Description: MOSFET N-CH 100V 55A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 20A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2245 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 4469 Stücke:
Lieferzeit 10-14 Tag (e)
7+2.82 EUR
10+2.29 EUR
100+1.62 EUR
500+1.38 EUR
1000+1.27 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
DMPH6023SK3Q-13 DMPH6023SK3Q-13 Diodes Incorporated DMPH6023SK3Q.pdf Description: MOSFET P-CHANNEL 60V 35A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 10A, 10V
Power Dissipation (Max): 3.2W
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 53.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2569 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 477500 Stücke:
Lieferzeit 10-14 Tag (e)
2500+0.84 EUR
5000+0.79 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
DMPH6023SK3Q-13 DMPH6023SK3Q-13 Diodes Incorporated DMPH6023SK3Q.pdf Description: MOSFET P-CHANNEL 60V 35A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 10A, 10V
Power Dissipation (Max): 3.2W
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 53.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2569 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 477833 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.03 EUR
10+1.92 EUR
100+1.29 EUR
500+1.02 EUR
1000+0.94 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
DMP3028LK3Q-13 DMP3028LK3Q-13 Diodes Incorporated DMP3028LK3Q.pdf Description: MOSFET P-CHANNEL 30V 27A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 7A, 10V
Power Dissipation (Max): 2.8W (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1241 pF @ 15 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 207500 Stücke:
Lieferzeit 10-14 Tag (e)
2500+0.42 EUR
5000+0.38 EUR
7500+0.37 EUR
12500+0.35 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
DMP3028LK3Q-13 DMP3028LK3Q-13 Diodes Incorporated DMP3028LK3Q.pdf Description: MOSFET P-CHANNEL 30V 27A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 7A, 10V
Power Dissipation (Max): 2.8W (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1241 pF @ 15 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 209841 Stücke:
Lieferzeit 10-14 Tag (e)
11+1.67 EUR
17+1.04 EUR
100+0.68 EUR
500+0.52 EUR
1000+0.47 EUR
Mindestbestellmenge: 11
Im Einkaufswagen  Stück im Wert von  UAH
SMF4L5.0AQ-7 SMF4L5.0AQ-7 Diodes Incorporated SMF4L5.0CAQ-SMF4L200CAQ.pdf Description: TRANSIENT VOLTAGE SUPPRESSOR PP
Packaging: Tape & Reel (TR)
Package / Case: DO-219AA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 43.5A
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: DO-219AA
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.4V
Voltage - Clamping (Max) @ Ipp: 9.2V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SBL3045CT-LS Diodes Incorporated SBL3030CT%20-%20SBL3060CT.pdf Description: SCHOTTKY RECTIFIER
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 15 A
Current - Reverse Leakage @ Vr: 500 µA @ 45 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MBR5200VPTR-E1 MBR5200VPTR-E1 Diodes Incorporated MBR5200.pdf Description: DIODE SCHOTTKY 200V 5A DO201
Packaging: Tape & Box (TB)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-201
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 200 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MBR5200VPBTR-E1 MBR5200VPBTR-E1 Diodes Incorporated MBR5200.pdf Description: DIODE SCHOTTKY 200V 5A DO201
Packaging: Tape & Box (TB)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-201
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 200 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MBR5200VP-E1 Diodes Incorporated MBR5200.pdf Description: DIODE SCHOTTKY 200V 5A DO27
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-27
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 200 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MBR5200VPC-G1 Diodes Incorporated Description: DIODE SCHOTTKY 200V 5A DO27
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-27
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 200 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MBR5200VPC-E1 Diodes Incorporated MBR5200.pdf Description: DIODE SCHOTTKY 200V 5A DO27
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-27
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 200 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MBR5200VPTR-G1 Diodes Incorporated MBR5200.pdf Description: DIODE SCHOTTKY 200V 5A DO27
Packaging: Tape & Box (TB)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-27
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 200 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MBR5200VPBTR-G1 Diodes Incorporated MBR5200.pdf Description: DIODE SCHOTTKY 200V 5A DO27
Packaging: Tape & Box (TB)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-27
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 200 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MBR5200VP-G1 Diodes Incorporated MBR5200.pdf Description: DIODE SCHOTTKY 200V 5A DO27
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-27
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 200 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MBR5200VPB-E1 Diodes Incorporated MBR5200.pdf Description: DIODE SCHOTTKY 200V 5A DO27
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-27
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 200 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MBR5200VPB-G1 Diodes Incorporated MBR5200.pdf Description: DIODE SCHOTTKY 200V 5A DO27
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-27
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 200 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BAS70T-7-G BAS70T-7-G Diodes Incorporated Description: DIODE SCHOTTKY 70V 70MA SOT523
Packaging: Tape & Reel (TR)
Package / Case: SOT-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 70mA
Supplier Device Package: SOT-523
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 100 nA @ 240 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BAS116T-7-G Diodes Incorporated Description: DIODE GEN PURP 85V SOT523
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BAW156TQ-7-F-52 Diodes Incorporated BAW156TQ.pdf Description: Switching Standard Diode SOT523
Packaging: Bulk
Package / Case: SOT-523
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 215mA
Supplier Device Package: SOT-523
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 85 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 5 nA @ 75 V
auf Bestellung 144000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.11 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
PI7C9X2G606PRDNJAE PI7C9X2G606PRDNJAE Diodes Incorporated PI7C9X2G606PR.pdf Description: IC INTFACE SPECIALIZED 196LBGA
Packaging: Tray
Package / Case: 196-LBGA
Mounting Type: Surface Mount
Interface: PCI Express
Applications: Packet Switch, 6-Port/6-Lane
Supplier Device Package: 196-LBGA (15x15)
Part Status: Active
auf Bestellung 3809 Stücke:
Lieferzeit 10-14 Tag (e)
1+34 EUR
10+24.15 EUR
25+21.58 EUR
126+19.52 EUR
Im Einkaufswagen  Stück im Wert von  UAH
AP22653AFDZ-7 AP22653AFDZ-7 Diodes Incorporated AP22652_53_52A_53A.pdf Description: LOAD SWITCH DFN2020
Features: Load Discharge, Slew Rate Controlled, Status Flag
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: USB Switch
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 65mOhm
Input Type: Non-Inverting
Voltage - Load: 3V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2.1A
Ratio - Input:Output: 1:1
Supplier Device Package: W-DFN2020-6 (Type A1)
Fault Protection: Current Limiting (Adjustable), Over Temperature, Over Voltage, Reverse Current, Short Circuit, UVLO
Part Status: Active
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.29 EUR
6000+0.26 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
AP22653AFDZ-7 AP22653AFDZ-7 Diodes Incorporated AP22652_53_52A_53A.pdf Description: LOAD SWITCH DFN2020
Features: Load Discharge, Slew Rate Controlled, Status Flag
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: USB Switch
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 65mOhm
Input Type: Non-Inverting
Voltage - Load: 3V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2.1A
Ratio - Input:Output: 1:1
Supplier Device Package: W-DFN2020-6 (Type A1)
Fault Protection: Current Limiting (Adjustable), Over Temperature, Over Voltage, Reverse Current, Short Circuit, UVLO
Part Status: Active
auf Bestellung 7065 Stücke:
Lieferzeit 10-14 Tag (e)
14+1.34 EUR
22+0.81 EUR
27+0.66 EUR
100+0.51 EUR
250+0.43 EUR
500+0.38 EUR
1000+0.34 EUR
Mindestbestellmenge: 14
Im Einkaufswagen  Stück im Wert von  UAH
DMP2170U-7 DMP2170U-7 Diodes Incorporated DMP2170U.pdf Description: MOSFET P-CH 20V 3.1A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta)
Rds On (Max) @ Id, Vgs: 90mOhm @ 3.5A, 4.5V
Power Dissipation (Max): 780mW (Ta)
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Supplier Device Package: SOT-23-3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 303 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 4641000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.14 EUR
9000+0.12 EUR
75000+0.1 EUR
150000+0.097 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
DMP2170U-7 DMP2170U-7 Diodes Incorporated DMP2170U.pdf Description: MOSFET P-CH 20V 3.1A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta)
Rds On (Max) @ Id, Vgs: 90mOhm @ 3.5A, 4.5V
Power Dissipation (Max): 780mW (Ta)
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Supplier Device Package: SOT-23-3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 303 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 4642470 Stücke:
Lieferzeit 10-14 Tag (e)
28+0.63 EUR
40+0.45 EUR
100+0.23 EUR
500+0.2 EUR
1000+0.16 EUR
Mindestbestellmenge: 28
Im Einkaufswagen  Stück im Wert von  UAH
DMN10H700S-13 DMN10H700S-13 Diodes Incorporated DMN10H700S.pdf Description: MOSFET N-CH 100V 700MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 700mA (Ta)
Rds On (Max) @ Id, Vgs: 700mOhm @ 1.5A, 10V
FET Feature: Standard
Power Dissipation (Max): 400mW (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 235 pF @ 50 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DMN10H700S-13 DMN10H700S-13 Diodes Incorporated DMN10H700S.pdf Description: MOSFET N-CH 100V 700MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 700mA (Ta)
Rds On (Max) @ Id, Vgs: 700mOhm @ 1.5A, 10V
FET Feature: Standard
Power Dissipation (Max): 400mW (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 235 pF @ 50 V
auf Bestellung 9976 Stücke:
Lieferzeit 10-14 Tag (e)
24+0.76 EUR
32+0.56 EUR
100+0.32 EUR
500+0.21 EUR
1000+0.16 EUR
2000+0.14 EUR
5000+0.13 EUR
Mindestbestellmenge: 24
Im Einkaufswagen  Stück im Wert von  UAH
DMN3042L-13 DMN3042L-13 Diodes Incorporated DMN3042L.pdf Description: MOSFET N-CH 30V 5.8A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta)
Rds On (Max) @ Id, Vgs: 26.5mOhm @ 5.8A, 10V
Power Dissipation (Max): 720mW (Ta)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 15 V
auf Bestellung 2030000 Stücke:
Lieferzeit 10-14 Tag (e)
10000+0.14 EUR
20000+0.13 EUR
30000+0.12 EUR
50000+0.11 EUR
Mindestbestellmenge: 10000
Im Einkaufswagen  Stück im Wert von  UAH
DMN3042L-13 DMN3042L-13 Diodes Incorporated DMN3042L.pdf Description: MOSFET N-CH 30V 5.8A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta)
Rds On (Max) @ Id, Vgs: 26.5mOhm @ 5.8A, 10V
Power Dissipation (Max): 720mW (Ta)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 15 V
auf Bestellung 2046277 Stücke:
Lieferzeit 10-14 Tag (e)
24+0.74 EUR
39+0.45 EUR
100+0.29 EUR
500+0.21 EUR
1000+0.19 EUR
2000+0.17 EUR
5000+0.15 EUR
Mindestbestellmenge: 24
Im Einkaufswagen  Stück im Wert von  UAH
WX5012D0125.000000 Diodes Incorporated Description: XO OSCILLATOR SMD
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PI7C9X3G816GPBHFCE PI7C9X3G816GPBHFCE Diodes Incorporated PI7C9X3G816GP.pdf Description: PACKET SWITCH H-FCBGA190190-324
Packaging: Tray
Package / Case: 324-BFBGA, FCBGA
Mounting Type: Surface Mount
Interface: I2C, JTAG, PCI Express, Serial, SMBus
Voltage - Supply: 0.9V ~ 0.99V
Applications: Packet Switch, 8-Port/16-Lane
Supplier Device Package: 324-HFCBGA (19x19)
Part Status: Active
auf Bestellung 38 Stücke:
Lieferzeit 10-14 Tag (e)
1+86.1 EUR
10+65.16 EUR
25+64.27 EUR
Im Einkaufswagen  Stück im Wert von  UAH
DML3012LDC-7A DML3012LDC-7A Diodes Incorporated DML3012LDC.pdf Description: MOSFET BVDSS: 8V~24V V-DFN3030-1
Packaging: Tape & Reel (TR)
Features: Power Good, Slew Rate Controlled
Package / Case: 12-VFDFN Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 4.8mOhm
Input Type: Non-Inverting
Voltage - Load: 0.5V ~ 20V
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Ratio - Input:Output: 1:1
Supplier Device Package: V-DFN3030-12 (Type B)
Fault Protection: Current Limiting (Adjustable), Over Temperature, Short Circuit, UVLO
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 45000 Stücke:
Lieferzeit 10-14 Tag (e)
1500+1.55 EUR
3000+1.52 EUR
Mindestbestellmenge: 1500
Im Einkaufswagen  Stück im Wert von  UAH
DML3012LDC-7A DML3012LDC-7A Diodes Incorporated DML3012LDC.pdf Description: MOSFET BVDSS: 8V~24V V-DFN3030-1
Packaging: Cut Tape (CT)
Features: Power Good, Slew Rate Controlled
Package / Case: 12-VFDFN Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 4.8mOhm
Input Type: Non-Inverting
Voltage - Load: 0.5V ~ 20V
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Ratio - Input:Output: 1:1
Supplier Device Package: V-DFN3030-12 (Type B)
Fault Protection: Current Limiting (Adjustable), Over Temperature, Short Circuit, UVLO
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 45822 Stücke:
Lieferzeit 10-14 Tag (e)
5+3.92 EUR
10+2.87 EUR
100+2.07 EUR
500+1.75 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
DML1008LDS-7 DML1008LDS-7 Diodes Incorporated DML1008LDS.pdf Description: IC PWR SWITCH N-CHAN 1:1 8VDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 8mOhm (Max)
Voltage - Load: 3.2V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 6A
Ratio - Input:Output: 1:1
Supplier Device Package: V-DFN3030-8 (Type R)
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DML1008LDS-7 DML1008LDS-7 Diodes Incorporated DML1008LDS.pdf Description: IC PWR SWITCH N-CHAN 1:1 8VDFN
Packaging: Cut Tape (CT)
Package / Case: 8-VDFN Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 8mOhm (Max)
Voltage - Load: 3.2V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 6A
Ratio - Input:Output: 1:1
Supplier Device Package: V-DFN3030-8 (Type R)
Part Status: Active
auf Bestellung 2830 Stücke:
Lieferzeit 10-14 Tag (e)
18+0.99 EUR
21+0.84 EUR
100+0.58 EUR
500+0.46 EUR
1000+0.37 EUR
Mindestbestellmenge: 18
Im Einkaufswagen  Stück im Wert von  UAH
DMP3007SCG-7 DMP3007SCG-7 Diodes Incorporated DMP3007SCG.pdf Description: MOSFET P-CH 30V 50A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 6.8mOhm @ 11.5A, 10V
Power Dissipation (Max): 2.4W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: V-DFN3333-8 (Type B)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 64.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2826 pF @ 15 V
auf Bestellung 56000 Stücke:
Lieferzeit 10-14 Tag (e)
2000+0.44 EUR
6000+0.43 EUR
10000+0.41 EUR
Mindestbestellmenge: 2000
Im Einkaufswagen  Stück im Wert von  UAH
DMP3007SCG-7 DMP3007SCG-7 Diodes Incorporated DMP3007SCG.pdf Description: MOSFET P-CH 30V 50A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 6.8mOhm @ 11.5A, 10V
Power Dissipation (Max): 2.4W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: V-DFN3333-8 (Type B)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 64.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2826 pF @ 15 V
auf Bestellung 56163 Stücke:
Lieferzeit 10-14 Tag (e)
10+1.87 EUR
15+1.18 EUR
100+0.78 EUR
500+0.6 EUR
1000+0.54 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
ZXMP6A17GQTA-52 ZXMP6A17GQTA-52 Diodes Incorporated ZXMP6A17GQ.pdf Description: MOSFET BVDSS: 41V~60V SOT223 T&R
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 125mOhm @ 2.2A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 637 pF @ 30 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
ZXMP6A17GTA-52 Diodes Incorporated ZXMP6A17G.pdf Description: MOSFET BVDSS: 41V~60V SOT223 T&R
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 125mOhm @ 2.2A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 637 pF @ 30 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DMN6068SEQ-13 DMN6068SEQ-13 Diodes Incorporated ds32033.pdf Description: MOSFET BVDSS: 41V~60V SOT223 T&R
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta)
Rds On (Max) @ Id, Vgs: 68mOhm @ 12A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-223-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 10.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 502 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 638497 Stücke:
Lieferzeit 10-14 Tag (e)
18+1 EUR
21+0.87 EUR
100+0.6 EUR
500+0.5 EUR
1000+0.43 EUR
2000+0.38 EUR
Mindestbestellmenge: 18
Im Einkaufswagen  Stück im Wert von  UAH
D2V5L1BS2LP3-7 D2V5L1BS2LP3-7 Diodes Incorporated D2V5L1BS2LP3.pdf Description: TVS DIODE 2.5VWM 6V X3DFN06032
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 32pF @ 1MHz
Current - Peak Pulse (10/1000µs): 15A (8/20µs)
Voltage - Reverse Standoff (Typ): 2.5V (Max)
Supplier Device Package: X3-DFN0603-2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 2.6V
Voltage - Clamping (Max) @ Ipp: 6V (Typ)
Power - Peak Pulse: 90W
Power Line Protection: No
Part Status: Active
auf Bestellung 5945 Stücke:
Lieferzeit 10-14 Tag (e)
50+0.35 EUR
75+0.24 EUR
162+0.11 EUR
500+0.1 EUR
1000+0.099 EUR
2000+0.098 EUR
5000+0.097 EUR
Mindestbestellmenge: 50
Im Einkaufswagen  Stück im Wert von  UAH
GDZ15LP3-7 GDZ15LP3-7 Diodes Incorporated GDZxVxLP3.pdf Description: DIODE ZENER 15V 250MW 2DFN
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 15 V
Supplier Device Package: X3-DFN0603-2
Part Status: Active
Power - Max: 250 mW
Current - Reverse Leakage @ Vr: 100 nA @ 10.5 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 380000 Stücke:
Lieferzeit 10-14 Tag (e)
10000+0.056 EUR
20000+0.049 EUR
50000+0.047 EUR
70000+0.043 EUR
Mindestbestellmenge: 10000
Im Einkaufswagen  Stück im Wert von  UAH
GDZ15LP3-7 GDZ15LP3-7 Diodes Incorporated GDZxVxLP3.pdf Description: DIODE ZENER 15V 250MW 2DFN
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 15 V
Supplier Device Package: X3-DFN0603-2
Part Status: Active
Power - Max: 250 mW
Current - Reverse Leakage @ Vr: 100 nA @ 10.5 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 390777 Stücke:
Lieferzeit 10-14 Tag (e)
72+0.25 EUR
102+0.17 EUR
238+0.074 EUR
500+0.07 EUR
1000+0.066 EUR
2000+0.064 EUR
5000+0.062 EUR
Mindestbestellmenge: 72
Im Einkaufswagen  Stück im Wert von  UAH
GDZ6V2LP3-7 GDZ6V2LP3-7 Diodes Incorporated GDZxVxLP3.pdf Description: DIODE ZENER 6.2V 250MW 2DFN
Packaging: Tape & Reel (TR)
Tolerance: ±5.4%
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 6.2 V
Supplier Device Package: X3-DFN0603-2
Part Status: Active
Power - Max: 250 mW
Current - Reverse Leakage @ Vr: 1 µA @ 3 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3430000 Stücke:
Lieferzeit 10-14 Tag (e)
10000+0.066 EUR
20000+0.061 EUR
30000+0.06 EUR
50000+0.059 EUR
70000+0.053 EUR
Mindestbestellmenge: 10000
Im Einkaufswagen  Stück im Wert von  UAH
GDZ6V2LP3-7 GDZ6V2LP3-7 Diodes Incorporated GDZxVxLP3.pdf Description: DIODE ZENER 6.2V 250MW 2DFN
Packaging: Cut Tape (CT)
Tolerance: ±5.4%
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 6.2 V
Supplier Device Package: X3-DFN0603-2
Part Status: Active
Power - Max: 250 mW
Current - Reverse Leakage @ Vr: 1 µA @ 3 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3439270 Stücke:
Lieferzeit 10-14 Tag (e)
59+0.3 EUR
87+0.2 EUR
201+0.088 EUR
500+0.083 EUR
1000+0.078 EUR
2000+0.076 EUR
5000+0.074 EUR
Mindestbestellmenge: 59
Im Einkaufswagen  Stück im Wert von  UAH
GDZ24LP3-7 GDZ24LP3-7 Diodes Incorporated GDZxVxLP3.pdf Description: DIODE ZENER 24V 250MW 2DFN
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 24 V
Supplier Device Package: X3-DFN0603-2
Part Status: Active
Power - Max: 250 mW
Current - Reverse Leakage @ Vr: 100 nA @ 16.8 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 240000 Stücke:
Lieferzeit 10-14 Tag (e)
10000+0.049 EUR
30000+0.047 EUR
50000+0.043 EUR
Mindestbestellmenge: 10000
Im Einkaufswagen  Stück im Wert von  UAH
GDZ24LP3-7 GDZ24LP3-7 Diodes Incorporated GDZxVxLP3.pdf Description: DIODE ZENER 24V 250MW 2DFN
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 24 V
Supplier Device Package: X3-DFN0603-2
Part Status: Active
Power - Max: 250 mW
Current - Reverse Leakage @ Vr: 100 nA @ 16.8 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 259218 Stücke:
Lieferzeit 10-14 Tag (e)
72+0.25 EUR
102+0.17 EUR
238+0.074 EUR
500+0.07 EUR
1000+0.066 EUR
2000+0.064 EUR
5000+0.062 EUR
Mindestbestellmenge: 72
Im Einkaufswagen  Stück im Wert von  UAH
GDZ7V5LP3-7 GDZ7V5LP3-7 Diodes Incorporated GDZxVxLP3.pdf Description: DIODE ZENER 7.5V 250MW 2DFN
Packaging: Tape & Reel (TR)
Tolerance: ±5.23%
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 7.5 V
Supplier Device Package: X3-DFN0603-2
Part Status: Active
Power - Max: 250 mW
Current - Reverse Leakage @ Vr: 500 nA @ 4 V
auf Bestellung 700000 Stücke:
Lieferzeit 10-14 Tag (e)
10000+0.052 EUR
Mindestbestellmenge: 10000
Im Einkaufswagen  Stück im Wert von  UAH
GDZ7V5LP3-7 GDZ7V5LP3-7 Diodes Incorporated GDZxVxLP3.pdf Description: DIODE ZENER 7.5V 250MW 2DFN
Packaging: Cut Tape (CT)
Tolerance: ±5.23%
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 7.5 V
Supplier Device Package: X3-DFN0603-2
Part Status: Active
Power - Max: 250 mW
Current - Reverse Leakage @ Vr: 500 nA @ 4 V
auf Bestellung 709185 Stücke:
Lieferzeit 10-14 Tag (e)
59+0.3 EUR
87+0.2 EUR
206+0.086 EUR
500+0.079 EUR
1000+0.072 EUR
2000+0.065 EUR
5000+0.057 EUR
Mindestbestellmenge: 59
Im Einkaufswagen  Stück im Wert von  UAH
GDZ11LP3-7 GDZ11LP3-7 Diodes Incorporated GDZxVxLP3.pdf Description: DIODE ZENER 11V 250MW 2DFN
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 11 V
Supplier Device Package: X3-DFN0603-2
Part Status: Active
Power - Max: 250 mW
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 270000 Stücke:
Lieferzeit 10-14 Tag (e)
10000+0.049 EUR
30000+0.047 EUR
50000+0.043 EUR
Mindestbestellmenge: 10000
Im Einkaufswagen  Stück im Wert von  UAH
GDZ11LP3-7 GDZ11LP3-7 Diodes Incorporated GDZxVxLP3.pdf Description: DIODE ZENER 11V 250MW 2DFN
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 11 V
Supplier Device Package: X3-DFN0603-2
Part Status: Active
Power - Max: 250 mW
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 296213 Stücke:
Lieferzeit 10-14 Tag (e)
72+0.25 EUR
102+0.17 EUR
256+0.069 EUR
500+0.064 EUR
1000+0.059 EUR
2000+0.058 EUR
5000+0.057 EUR
Mindestbestellmenge: 72
Im Einkaufswagen  Stück im Wert von  UAH
GDZ2V7LP3-7 GDZ2V7LP3-7 Diodes Incorporated GDZxVxLP3.pdf Description: DIODE ZENER 2.7V 250MW 2DFN
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 2.7 V
Supplier Device Package: X3-DFN0603-2
Part Status: Active
Power - Max: 250 mW
Current - Reverse Leakage @ Vr: 20 µA @ 1 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 70000 Stücke:
Lieferzeit 10-14 Tag (e)
10000+0.052 EUR
20000+0.049 EUR
50000+0.047 EUR
70000+0.043 EUR
Mindestbestellmenge: 10000
Im Einkaufswagen  Stück im Wert von  UAH
GDZ2V7LP3-7 GDZ2V7LP3-7 Diodes Incorporated GDZxVxLP3.pdf Description: DIODE ZENER 2.7V 250MW 2DFN
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 2.7 V
Supplier Device Package: X3-DFN0603-2
Part Status: Active
Power - Max: 250 mW
Current - Reverse Leakage @ Vr: 20 µA @ 1 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 78055 Stücke:
Lieferzeit 10-14 Tag (e)
91+0.19 EUR
129+0.14 EUR
249+0.071 EUR
500+0.065 EUR
1000+0.059 EUR
2000+0.057 EUR
5000+0.056 EUR
Mindestbestellmenge: 91
Im Einkaufswagen  Stück im Wert von  UAH
GDZ4V3LP3-7 GDZ4V3LP3-7 Diodes Incorporated GDZxVxLP3.pdf Description: DIODE ZENER 4.3V 250MW 2DFN
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 4.3 V
Supplier Device Package: X3-DFN0603-2
Part Status: Active
Power - Max: 250 mW
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 200000 Stücke:
Lieferzeit 10-14 Tag (e)
10000+0.056 EUR
20000+0.049 EUR
50000+0.047 EUR
70000+0.043 EUR
Mindestbestellmenge: 10000
Im Einkaufswagen  Stück im Wert von  UAH
DMTH43M8LK3-13 DMTH43M8LK3.pdf
DMTH43M8LK3-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CHANNEL 40V 100A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 20A, 10V
Power Dissipation (Max): 88W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 38.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2693 pF @ 20 V
auf Bestellung 4985 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+2.15 EUR
13+1.36 EUR
100+0.92 EUR
500+0.74 EUR
1000+0.68 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
DMP45H4D9HK3-13 DMP45H4D9HK3.pdf
DMP45H4D9HK3-13
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 450V 4.7A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc)
Rds On (Max) @ Id, Vgs: 4.9Ohm @ 1.05A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 450 V
Gate Charge (Qg) (Max) @ Vgs: 13.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 564 pF @ 25 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.55 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
DMP45H4D9HK3-13 DMP45H4D9HK3.pdf
DMP45H4D9HK3-13
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 450V 4.7A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc)
Rds On (Max) @ Id, Vgs: 4.9Ohm @ 1.05A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 450 V
Gate Charge (Qg) (Max) @ Vgs: 13.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 564 pF @ 25 V
auf Bestellung 4006 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
11+1.72 EUR
16+1.17 EUR
100+0.87 EUR
500+0.7 EUR
1000+0.64 EUR
Mindestbestellmenge: 11
Im Einkaufswagen  Stück im Wert von  UAH
DMN6017SK3-13 DMN6017SK3.pdf
DMN6017SK3-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CHANNEL 60V 43A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 6A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2711 pF @ 15 V
auf Bestellung 12500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.39 EUR
5000+0.36 EUR
7500+0.34 EUR
12500+0.32 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
DMN6017SK3-13 DMN6017SK3.pdf
DMN6017SK3-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CHANNEL 60V 43A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 6A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2711 pF @ 15 V
auf Bestellung 13698 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
12+1.55 EUR
19+0.97 EUR
100+0.63 EUR
500+0.49 EUR
1000+0.44 EUR
Mindestbestellmenge: 12
Im Einkaufswagen  Stück im Wert von  UAH
DMNH10H028SK3Q-13 DMNH10H028SK3Q.pdf
DMNH10H028SK3Q-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 100V 55A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 20A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2245 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+1.19 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
DMNH10H028SK3Q-13 DMNH10H028SK3Q.pdf
DMNH10H028SK3Q-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 100V 55A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 20A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2245 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 4469 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.82 EUR
10+2.29 EUR
100+1.62 EUR
500+1.38 EUR
1000+1.27 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
DMPH6023SK3Q-13 DMPH6023SK3Q.pdf
DMPH6023SK3Q-13
Hersteller: Diodes Incorporated
Description: MOSFET P-CHANNEL 60V 35A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 10A, 10V
Power Dissipation (Max): 3.2W
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 53.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2569 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 477500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.84 EUR
5000+0.79 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
DMPH6023SK3Q-13 DMPH6023SK3Q.pdf
DMPH6023SK3Q-13
Hersteller: Diodes Incorporated
Description: MOSFET P-CHANNEL 60V 35A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 10A, 10V
Power Dissipation (Max): 3.2W
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 53.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2569 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 477833 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.03 EUR
10+1.92 EUR
100+1.29 EUR
500+1.02 EUR
1000+0.94 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
DMP3028LK3Q-13 DMP3028LK3Q.pdf
DMP3028LK3Q-13
Hersteller: Diodes Incorporated
Description: MOSFET P-CHANNEL 30V 27A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 7A, 10V
Power Dissipation (Max): 2.8W (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1241 pF @ 15 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 207500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.42 EUR
5000+0.38 EUR
7500+0.37 EUR
12500+0.35 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
DMP3028LK3Q-13 DMP3028LK3Q.pdf
DMP3028LK3Q-13
Hersteller: Diodes Incorporated
Description: MOSFET P-CHANNEL 30V 27A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 7A, 10V
Power Dissipation (Max): 2.8W (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1241 pF @ 15 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 209841 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
11+1.67 EUR
17+1.04 EUR
100+0.68 EUR
500+0.52 EUR
1000+0.47 EUR
Mindestbestellmenge: 11
Im Einkaufswagen  Stück im Wert von  UAH
SMF4L5.0AQ-7 SMF4L5.0CAQ-SMF4L200CAQ.pdf
SMF4L5.0AQ-7
Hersteller: Diodes Incorporated
Description: TRANSIENT VOLTAGE SUPPRESSOR PP
Packaging: Tape & Reel (TR)
Package / Case: DO-219AA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 43.5A
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: DO-219AA
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.4V
Voltage - Clamping (Max) @ Ipp: 9.2V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SBL3045CT-LS SBL3030CT%20-%20SBL3060CT.pdf
Hersteller: Diodes Incorporated
Description: SCHOTTKY RECTIFIER
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 15 A
Current - Reverse Leakage @ Vr: 500 µA @ 45 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MBR5200VPTR-E1 MBR5200.pdf
MBR5200VPTR-E1
Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 200V 5A DO201
Packaging: Tape & Box (TB)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-201
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 200 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MBR5200VPBTR-E1 MBR5200.pdf
MBR5200VPBTR-E1
Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 200V 5A DO201
Packaging: Tape & Box (TB)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-201
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 200 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MBR5200VP-E1 MBR5200.pdf
Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 200V 5A DO27
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-27
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 200 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MBR5200VPC-G1
Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 200V 5A DO27
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-27
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 200 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MBR5200VPC-E1 MBR5200.pdf
Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 200V 5A DO27
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-27
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 200 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MBR5200VPTR-G1 MBR5200.pdf
Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 200V 5A DO27
Packaging: Tape & Box (TB)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-27
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 200 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MBR5200VPBTR-G1 MBR5200.pdf
Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 200V 5A DO27
Packaging: Tape & Box (TB)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-27
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 200 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MBR5200VP-G1 MBR5200.pdf
Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 200V 5A DO27
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-27
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 200 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MBR5200VPB-E1 MBR5200.pdf
Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 200V 5A DO27
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-27
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 200 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MBR5200VPB-G1 MBR5200.pdf
Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 200V 5A DO27
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-27
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 200 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BAS70T-7-G
BAS70T-7-G
Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 70V 70MA SOT523
Packaging: Tape & Reel (TR)
Package / Case: SOT-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 70mA
Supplier Device Package: SOT-523
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 100 nA @ 240 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BAS116T-7-G
Hersteller: Diodes Incorporated
Description: DIODE GEN PURP 85V SOT523
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BAW156TQ-7-F-52 BAW156TQ.pdf
Hersteller: Diodes Incorporated
Description: Switching Standard Diode SOT523
Packaging: Bulk
Package / Case: SOT-523
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 215mA
Supplier Device Package: SOT-523
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 85 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 5 nA @ 75 V
auf Bestellung 144000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.11 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
PI7C9X2G606PRDNJAE PI7C9X2G606PR.pdf
PI7C9X2G606PRDNJAE
Hersteller: Diodes Incorporated
Description: IC INTFACE SPECIALIZED 196LBGA
Packaging: Tray
Package / Case: 196-LBGA
Mounting Type: Surface Mount
Interface: PCI Express
Applications: Packet Switch, 6-Port/6-Lane
Supplier Device Package: 196-LBGA (15x15)
Part Status: Active
auf Bestellung 3809 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+34 EUR
10+24.15 EUR
25+21.58 EUR
126+19.52 EUR
Im Einkaufswagen  Stück im Wert von  UAH
AP22653AFDZ-7 AP22652_53_52A_53A.pdf
AP22653AFDZ-7
Hersteller: Diodes Incorporated
Description: LOAD SWITCH DFN2020
Features: Load Discharge, Slew Rate Controlled, Status Flag
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: USB Switch
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 65mOhm
Input Type: Non-Inverting
Voltage - Load: 3V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2.1A
Ratio - Input:Output: 1:1
Supplier Device Package: W-DFN2020-6 (Type A1)
Fault Protection: Current Limiting (Adjustable), Over Temperature, Over Voltage, Reverse Current, Short Circuit, UVLO
Part Status: Active
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.29 EUR
6000+0.26 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
AP22653AFDZ-7 AP22652_53_52A_53A.pdf
AP22653AFDZ-7
Hersteller: Diodes Incorporated
Description: LOAD SWITCH DFN2020
Features: Load Discharge, Slew Rate Controlled, Status Flag
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: USB Switch
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 65mOhm
Input Type: Non-Inverting
Voltage - Load: 3V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2.1A
Ratio - Input:Output: 1:1
Supplier Device Package: W-DFN2020-6 (Type A1)
Fault Protection: Current Limiting (Adjustable), Over Temperature, Over Voltage, Reverse Current, Short Circuit, UVLO
Part Status: Active
auf Bestellung 7065 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
14+1.34 EUR
22+0.81 EUR
27+0.66 EUR
100+0.51 EUR
250+0.43 EUR
500+0.38 EUR
1000+0.34 EUR
Mindestbestellmenge: 14
Im Einkaufswagen  Stück im Wert von  UAH
DMP2170U-7 DMP2170U.pdf
DMP2170U-7
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 20V 3.1A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta)
Rds On (Max) @ Id, Vgs: 90mOhm @ 3.5A, 4.5V
Power Dissipation (Max): 780mW (Ta)
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Supplier Device Package: SOT-23-3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 303 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 4641000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.14 EUR
9000+0.12 EUR
75000+0.1 EUR
150000+0.097 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
DMP2170U-7 DMP2170U.pdf
DMP2170U-7
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 20V 3.1A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta)
Rds On (Max) @ Id, Vgs: 90mOhm @ 3.5A, 4.5V
Power Dissipation (Max): 780mW (Ta)
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Supplier Device Package: SOT-23-3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 303 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 4642470 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
28+0.63 EUR
40+0.45 EUR
100+0.23 EUR
500+0.2 EUR
1000+0.16 EUR
Mindestbestellmenge: 28
Im Einkaufswagen  Stück im Wert von  UAH
DMN10H700S-13 DMN10H700S.pdf
DMN10H700S-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 100V 700MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 700mA (Ta)
Rds On (Max) @ Id, Vgs: 700mOhm @ 1.5A, 10V
FET Feature: Standard
Power Dissipation (Max): 400mW (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 235 pF @ 50 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DMN10H700S-13 DMN10H700S.pdf
DMN10H700S-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 100V 700MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 700mA (Ta)
Rds On (Max) @ Id, Vgs: 700mOhm @ 1.5A, 10V
FET Feature: Standard
Power Dissipation (Max): 400mW (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 235 pF @ 50 V
auf Bestellung 9976 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
24+0.76 EUR
32+0.56 EUR
100+0.32 EUR
500+0.21 EUR
1000+0.16 EUR
2000+0.14 EUR
5000+0.13 EUR
Mindestbestellmenge: 24
Im Einkaufswagen  Stück im Wert von  UAH
DMN3042L-13 DMN3042L.pdf
DMN3042L-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 5.8A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta)
Rds On (Max) @ Id, Vgs: 26.5mOhm @ 5.8A, 10V
Power Dissipation (Max): 720mW (Ta)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 15 V
auf Bestellung 2030000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10000+0.14 EUR
20000+0.13 EUR
30000+0.12 EUR
50000+0.11 EUR
Mindestbestellmenge: 10000
Im Einkaufswagen  Stück im Wert von  UAH
DMN3042L-13 DMN3042L.pdf
DMN3042L-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 5.8A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta)
Rds On (Max) @ Id, Vgs: 26.5mOhm @ 5.8A, 10V
Power Dissipation (Max): 720mW (Ta)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 15 V
auf Bestellung 2046277 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
24+0.74 EUR
39+0.45 EUR
100+0.29 EUR
500+0.21 EUR
1000+0.19 EUR
2000+0.17 EUR
5000+0.15 EUR
Mindestbestellmenge: 24
Im Einkaufswagen  Stück im Wert von  UAH
WX5012D0125.000000
Hersteller: Diodes Incorporated
Description: XO OSCILLATOR SMD
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PI7C9X3G816GPBHFCE PI7C9X3G816GP.pdf
PI7C9X3G816GPBHFCE
Hersteller: Diodes Incorporated
Description: PACKET SWITCH H-FCBGA190190-324
Packaging: Tray
Package / Case: 324-BFBGA, FCBGA
Mounting Type: Surface Mount
Interface: I2C, JTAG, PCI Express, Serial, SMBus
Voltage - Supply: 0.9V ~ 0.99V
Applications: Packet Switch, 8-Port/16-Lane
Supplier Device Package: 324-HFCBGA (19x19)
Part Status: Active
auf Bestellung 38 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+86.1 EUR
10+65.16 EUR
25+64.27 EUR
Im Einkaufswagen  Stück im Wert von  UAH
DML3012LDC-7A DML3012LDC.pdf
DML3012LDC-7A
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 8V~24V V-DFN3030-1
Packaging: Tape & Reel (TR)
Features: Power Good, Slew Rate Controlled
Package / Case: 12-VFDFN Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 4.8mOhm
Input Type: Non-Inverting
Voltage - Load: 0.5V ~ 20V
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Ratio - Input:Output: 1:1
Supplier Device Package: V-DFN3030-12 (Type B)
Fault Protection: Current Limiting (Adjustable), Over Temperature, Short Circuit, UVLO
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 45000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1500+1.55 EUR
3000+1.52 EUR
Mindestbestellmenge: 1500
Im Einkaufswagen  Stück im Wert von  UAH
DML3012LDC-7A DML3012LDC.pdf
DML3012LDC-7A
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 8V~24V V-DFN3030-1
Packaging: Cut Tape (CT)
Features: Power Good, Slew Rate Controlled
Package / Case: 12-VFDFN Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 4.8mOhm
Input Type: Non-Inverting
Voltage - Load: 0.5V ~ 20V
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Ratio - Input:Output: 1:1
Supplier Device Package: V-DFN3030-12 (Type B)
Fault Protection: Current Limiting (Adjustable), Over Temperature, Short Circuit, UVLO
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 45822 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.92 EUR
10+2.87 EUR
100+2.07 EUR
500+1.75 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
DML1008LDS-7 DML1008LDS.pdf
DML1008LDS-7
Hersteller: Diodes Incorporated
Description: IC PWR SWITCH N-CHAN 1:1 8VDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 8mOhm (Max)
Voltage - Load: 3.2V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 6A
Ratio - Input:Output: 1:1
Supplier Device Package: V-DFN3030-8 (Type R)
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DML1008LDS-7 DML1008LDS.pdf
DML1008LDS-7
Hersteller: Diodes Incorporated
Description: IC PWR SWITCH N-CHAN 1:1 8VDFN
Packaging: Cut Tape (CT)
Package / Case: 8-VDFN Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 8mOhm (Max)
Voltage - Load: 3.2V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 6A
Ratio - Input:Output: 1:1
Supplier Device Package: V-DFN3030-8 (Type R)
Part Status: Active
auf Bestellung 2830 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
18+0.99 EUR
21+0.84 EUR
100+0.58 EUR
500+0.46 EUR
1000+0.37 EUR
Mindestbestellmenge: 18
Im Einkaufswagen  Stück im Wert von  UAH
DMP3007SCG-7 DMP3007SCG.pdf
DMP3007SCG-7
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 30V 50A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 6.8mOhm @ 11.5A, 10V
Power Dissipation (Max): 2.4W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: V-DFN3333-8 (Type B)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 64.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2826 pF @ 15 V
auf Bestellung 56000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2000+0.44 EUR
6000+0.43 EUR
10000+0.41 EUR
Mindestbestellmenge: 2000
Im Einkaufswagen  Stück im Wert von  UAH
DMP3007SCG-7 DMP3007SCG.pdf
DMP3007SCG-7
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 30V 50A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 6.8mOhm @ 11.5A, 10V
Power Dissipation (Max): 2.4W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: V-DFN3333-8 (Type B)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 64.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2826 pF @ 15 V
auf Bestellung 56163 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+1.87 EUR
15+1.18 EUR
100+0.78 EUR
500+0.6 EUR
1000+0.54 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
ZXMP6A17GQTA-52 ZXMP6A17GQ.pdf
ZXMP6A17GQTA-52
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 41V~60V SOT223 T&R
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 125mOhm @ 2.2A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 637 pF @ 30 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
ZXMP6A17GTA-52 ZXMP6A17G.pdf
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 41V~60V SOT223 T&R
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 125mOhm @ 2.2A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 637 pF @ 30 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DMN6068SEQ-13 ds32033.pdf
DMN6068SEQ-13
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 41V~60V SOT223 T&R
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta)
Rds On (Max) @ Id, Vgs: 68mOhm @ 12A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-223-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 10.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 502 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 638497 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
18+1 EUR
21+0.87 EUR
100+0.6 EUR
500+0.5 EUR
1000+0.43 EUR
2000+0.38 EUR
Mindestbestellmenge: 18
Im Einkaufswagen  Stück im Wert von  UAH
D2V5L1BS2LP3-7 D2V5L1BS2LP3.pdf
D2V5L1BS2LP3-7
Hersteller: Diodes Incorporated
Description: TVS DIODE 2.5VWM 6V X3DFN06032
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 32pF @ 1MHz
Current - Peak Pulse (10/1000µs): 15A (8/20µs)
Voltage - Reverse Standoff (Typ): 2.5V (Max)
Supplier Device Package: X3-DFN0603-2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 2.6V
Voltage - Clamping (Max) @ Ipp: 6V (Typ)
Power - Peak Pulse: 90W
Power Line Protection: No
Part Status: Active
auf Bestellung 5945 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
50+0.35 EUR
75+0.24 EUR
162+0.11 EUR
500+0.1 EUR
1000+0.099 EUR
2000+0.098 EUR
5000+0.097 EUR
Mindestbestellmenge: 50
Im Einkaufswagen  Stück im Wert von  UAH
GDZ15LP3-7 GDZxVxLP3.pdf
GDZ15LP3-7
Hersteller: Diodes Incorporated
Description: DIODE ZENER 15V 250MW 2DFN
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 15 V
Supplier Device Package: X3-DFN0603-2
Part Status: Active
Power - Max: 250 mW
Current - Reverse Leakage @ Vr: 100 nA @ 10.5 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 380000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10000+0.056 EUR
20000+0.049 EUR
50000+0.047 EUR
70000+0.043 EUR
Mindestbestellmenge: 10000
Im Einkaufswagen  Stück im Wert von  UAH
GDZ15LP3-7 GDZxVxLP3.pdf
GDZ15LP3-7
Hersteller: Diodes Incorporated
Description: DIODE ZENER 15V 250MW 2DFN
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 15 V
Supplier Device Package: X3-DFN0603-2
Part Status: Active
Power - Max: 250 mW
Current - Reverse Leakage @ Vr: 100 nA @ 10.5 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 390777 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
72+0.25 EUR
102+0.17 EUR
238+0.074 EUR
500+0.07 EUR
1000+0.066 EUR
2000+0.064 EUR
5000+0.062 EUR
Mindestbestellmenge: 72
Im Einkaufswagen  Stück im Wert von  UAH
GDZ6V2LP3-7 GDZxVxLP3.pdf
GDZ6V2LP3-7
Hersteller: Diodes Incorporated
Description: DIODE ZENER 6.2V 250MW 2DFN
Packaging: Tape & Reel (TR)
Tolerance: ±5.4%
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 6.2 V
Supplier Device Package: X3-DFN0603-2
Part Status: Active
Power - Max: 250 mW
Current - Reverse Leakage @ Vr: 1 µA @ 3 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3430000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10000+0.066 EUR
20000+0.061 EUR
30000+0.06 EUR
50000+0.059 EUR
70000+0.053 EUR
Mindestbestellmenge: 10000
Im Einkaufswagen  Stück im Wert von  UAH
GDZ6V2LP3-7 GDZxVxLP3.pdf
GDZ6V2LP3-7
Hersteller: Diodes Incorporated
Description: DIODE ZENER 6.2V 250MW 2DFN
Packaging: Cut Tape (CT)
Tolerance: ±5.4%
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 6.2 V
Supplier Device Package: X3-DFN0603-2
Part Status: Active
Power - Max: 250 mW
Current - Reverse Leakage @ Vr: 1 µA @ 3 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3439270 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
59+0.3 EUR
87+0.2 EUR
201+0.088 EUR
500+0.083 EUR
1000+0.078 EUR
2000+0.076 EUR
5000+0.074 EUR
Mindestbestellmenge: 59
Im Einkaufswagen  Stück im Wert von  UAH
GDZ24LP3-7 GDZxVxLP3.pdf
GDZ24LP3-7
Hersteller: Diodes Incorporated
Description: DIODE ZENER 24V 250MW 2DFN
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 24 V
Supplier Device Package: X3-DFN0603-2
Part Status: Active
Power - Max: 250 mW
Current - Reverse Leakage @ Vr: 100 nA @ 16.8 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 240000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10000+0.049 EUR
30000+0.047 EUR
50000+0.043 EUR
Mindestbestellmenge: 10000
Im Einkaufswagen  Stück im Wert von  UAH
GDZ24LP3-7 GDZxVxLP3.pdf
GDZ24LP3-7
Hersteller: Diodes Incorporated
Description: DIODE ZENER 24V 250MW 2DFN
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 24 V
Supplier Device Package: X3-DFN0603-2
Part Status: Active
Power - Max: 250 mW
Current - Reverse Leakage @ Vr: 100 nA @ 16.8 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 259218 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
72+0.25 EUR
102+0.17 EUR
238+0.074 EUR
500+0.07 EUR
1000+0.066 EUR
2000+0.064 EUR
5000+0.062 EUR
Mindestbestellmenge: 72
Im Einkaufswagen  Stück im Wert von  UAH
GDZ7V5LP3-7 GDZxVxLP3.pdf
GDZ7V5LP3-7
Hersteller: Diodes Incorporated
Description: DIODE ZENER 7.5V 250MW 2DFN
Packaging: Tape & Reel (TR)
Tolerance: ±5.23%
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 7.5 V
Supplier Device Package: X3-DFN0603-2
Part Status: Active
Power - Max: 250 mW
Current - Reverse Leakage @ Vr: 500 nA @ 4 V
auf Bestellung 700000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10000+0.052 EUR
Mindestbestellmenge: 10000
Im Einkaufswagen  Stück im Wert von  UAH
GDZ7V5LP3-7 GDZxVxLP3.pdf
GDZ7V5LP3-7
Hersteller: Diodes Incorporated
Description: DIODE ZENER 7.5V 250MW 2DFN
Packaging: Cut Tape (CT)
Tolerance: ±5.23%
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 7.5 V
Supplier Device Package: X3-DFN0603-2
Part Status: Active
Power - Max: 250 mW
Current - Reverse Leakage @ Vr: 500 nA @ 4 V
auf Bestellung 709185 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
59+0.3 EUR
87+0.2 EUR
206+0.086 EUR
500+0.079 EUR
1000+0.072 EUR
2000+0.065 EUR
5000+0.057 EUR
Mindestbestellmenge: 59
Im Einkaufswagen  Stück im Wert von  UAH
GDZ11LP3-7 GDZxVxLP3.pdf
GDZ11LP3-7
Hersteller: Diodes Incorporated
Description: DIODE ZENER 11V 250MW 2DFN
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 11 V
Supplier Device Package: X3-DFN0603-2
Part Status: Active
Power - Max: 250 mW
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 270000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10000+0.049 EUR
30000+0.047 EUR
50000+0.043 EUR
Mindestbestellmenge: 10000
Im Einkaufswagen  Stück im Wert von  UAH
GDZ11LP3-7 GDZxVxLP3.pdf
GDZ11LP3-7
Hersteller: Diodes Incorporated
Description: DIODE ZENER 11V 250MW 2DFN
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 11 V
Supplier Device Package: X3-DFN0603-2
Part Status: Active
Power - Max: 250 mW
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 296213 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
72+0.25 EUR
102+0.17 EUR
256+0.069 EUR
500+0.064 EUR
1000+0.059 EUR
2000+0.058 EUR
5000+0.057 EUR
Mindestbestellmenge: 72
Im Einkaufswagen  Stück im Wert von  UAH
GDZ2V7LP3-7 GDZxVxLP3.pdf
GDZ2V7LP3-7
Hersteller: Diodes Incorporated
Description: DIODE ZENER 2.7V 250MW 2DFN
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 2.7 V
Supplier Device Package: X3-DFN0603-2
Part Status: Active
Power - Max: 250 mW
Current - Reverse Leakage @ Vr: 20 µA @ 1 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 70000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10000+0.052 EUR
20000+0.049 EUR
50000+0.047 EUR
70000+0.043 EUR
Mindestbestellmenge: 10000
Im Einkaufswagen  Stück im Wert von  UAH
GDZ2V7LP3-7 GDZxVxLP3.pdf
GDZ2V7LP3-7
Hersteller: Diodes Incorporated
Description: DIODE ZENER 2.7V 250MW 2DFN
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 2.7 V
Supplier Device Package: X3-DFN0603-2
Part Status: Active
Power - Max: 250 mW
Current - Reverse Leakage @ Vr: 20 µA @ 1 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 78055 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
91+0.19 EUR
129+0.14 EUR
249+0.071 EUR
500+0.065 EUR
1000+0.059 EUR
2000+0.057 EUR
5000+0.056 EUR
Mindestbestellmenge: 91
Im Einkaufswagen  Stück im Wert von  UAH
GDZ4V3LP3-7 GDZxVxLP3.pdf
GDZ4V3LP3-7
Hersteller: Diodes Incorporated
Description: DIODE ZENER 4.3V 250MW 2DFN
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 4.3 V
Supplier Device Package: X3-DFN0603-2
Part Status: Active
Power - Max: 250 mW
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 200000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10000+0.056 EUR
20000+0.049 EUR
50000+0.047 EUR
70000+0.043 EUR
Mindestbestellmenge: 10000
Im Einkaufswagen  Stück im Wert von  UAH
Wählen Sie Seite:   [  << Vorherige Seite ]  1 131 262 393 524 540 541 542 543 544 545 546 547 548 549 550 655 786 917 1048 1179 1310 1318  [ Nächste Seite >> ]