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DMNH6042SPS-13 DMNH6042SPS-13 Diodes Incorporated DMNH6042SPS.pdf Description: MOSFET N-CH 60V 24A PWRDI5060-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 5.1A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 584 pF @ 25 V
Qualification: AEC-Q101
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DMNH6042SPS-13 DMNH6042SPS-13 Diodes Incorporated DMNH6042SPS.pdf Description: MOSFET N-CH 60V 24A PWRDI5060-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 5.1A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 584 pF @ 25 V
Qualification: AEC-Q101
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DMTH8003SPS-13 DMTH8003SPS-13 Diodes Incorporated DMTH8003SPS.pdf Description: MOSFET N-CH 80V 100A PWRDI5060-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 30A, 10V
Power Dissipation (Max): 2.9W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type K)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 124.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8952 pF @ 40 V
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DMTH8003SPS-13 DMTH8003SPS-13 Diodes Incorporated DMTH8003SPS.pdf Description: MOSFET N-CH 80V 100A PWRDI5060-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 30A, 10V
Power Dissipation (Max): 2.9W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type K)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 124.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8952 pF @ 40 V
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DMTH61M8LPS-13 DMTH61M8LPS-13 Diodes Incorporated DMTH61M8LPS.pdf Description: MOSFET N-CH 60V 225A PWRDI
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 225A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 30A, 10V
Power Dissipation (Max): 3.2W (Ta), 187.5W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 115.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8320 pF @ 30 V
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DMTH61M8LPS-13 DMTH61M8LPS-13 Diodes Incorporated DMTH61M8LPS.pdf Description: MOSFET N-CH 60V 225A PWRDI
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 225A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 30A, 10V
Power Dissipation (Max): 3.2W (Ta), 187.5W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 115.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8320 pF @ 30 V
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DXTN3C60PS-13 DXTN3C60PS-13 Diodes Incorporated DXTN3C60PS.pdf Description: TRANS NPN 60V 3A POWERDI5060-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 175°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 270mV @ 300mA, 3A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Frequency - Transition: 140MHz
Supplier Device Package: PowerDI5060-8
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 2.25 W
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DXTN3C60PS-13 DXTN3C60PS-13 Diodes Incorporated DXTN3C60PS.pdf Description: TRANS NPN 60V 3A POWERDI5060-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 175°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 270mV @ 300mA, 3A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Frequency - Transition: 140MHz
Supplier Device Package: PowerDI5060-8
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 2.25 W
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DMT30M9LPS-13 DMT30M9LPS-13 Diodes Incorporated DMT30M9LPS.pdf Description: MOSFET BVDSS: 25V-30V POWERDI506
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1mOhm @ 25A, 10V
Power Dissipation (Max): 2.6W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type K)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 160.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12121 pF @ 20 V
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DMT30M9LPS-13 DMT30M9LPS-13 Diodes Incorporated DMT30M9LPS.pdf Description: MOSFET BVDSS: 25V-30V POWERDI506
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1mOhm @ 25A, 10V
Power Dissipation (Max): 2.6W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type K)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 160.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12121 pF @ 20 V
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DMTH41M2SPS-13 DMTH41M2SPS-13 Diodes Incorporated DMTH41M2SPS.pdf Description: MOSFET BVDSS: 31V~40V POWERDI506
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 225A (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 30A, 10V
Power Dissipation (Max): 3.4W (Ta), 158W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type K)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 138 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11085 pF @ 20 V
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DMTH41M2SPS-13 DMTH41M2SPS-13 Diodes Incorporated DMTH41M2SPS.pdf Description: MOSFET BVDSS: 31V~40V POWERDI506
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 225A (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 30A, 10V
Power Dissipation (Max): 3.4W (Ta), 158W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type K)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 138 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11085 pF @ 20 V
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DMWSH120H90SM4Q DMWSH120H90SM4Q Diodes Incorporated DMWSH120H90SM4Q.pdf Description: SICFET N-CH 1200V TO-247
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 97.5mOhm @ 20A, 15V
Power Dissipation (Max): 235W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 5mA
Supplier Device Package: TO-247-4
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 47.6 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1112 pF @ 1000 V
Qualification: AEC-Q101
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DMN63D8LW-13 DMN63D8LW-13 Diodes Incorporated DMN63D8LW.pdf Description: MOSFET N-CH 30V 380MA SOT323
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Input Capacitance (Ciss) (Max) @ Vds: 23.2 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 0.9 nC @ 10 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Supplier Device Package: SOT-323
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 300mW (Ta)
Rds On (Max) @ Id, Vgs: 2.8Ohm @ 250mA, 10V
Current - Continuous Drain (Id) @ 25°C: 380mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
Drain to Source Voltage (Vdss): 30 V
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3.0SMCJ33A-13 3.0SMCJ33A-13 Diodes Incorporated 3.0SMCJ5.0CA-3.0SMCJ170CA.pdf Description: TVS DIODE 33VWM 53.3VC SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 56.3A
Voltage - Reverse Standoff (Typ): 33V
Supplier Device Package: SMC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 36.7V
Voltage - Clamping (Max) @ Ipp: 53.3V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
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DMN3732UFB4-7B DMN3732UFB4-7B Diodes Incorporated DMN3732UFB4.pdf Description: MOSFET BVDSS: 25V~30V X2-DFN1006
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta)
Rds On (Max) @ Id, Vgs: 460mOhm @ 200mA, 4.5V
Power Dissipation (Max): 490mW (Ta)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: X2-DFN1006-3
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 40.8 pF @ 25 V
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DMN3732UFB4-7B DMN3732UFB4-7B Diodes Incorporated DMN3732UFB4.pdf Description: MOSFET BVDSS: 25V~30V X2-DFN1006
Packaging: Cut Tape (CT)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta)
Rds On (Max) @ Id, Vgs: 460mOhm @ 200mA, 4.5V
Power Dissipation (Max): 490mW (Ta)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: X2-DFN1006-3
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 40.8 pF @ 25 V
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500+0.15 EUR
1000+0.11 EUR
2000+0.094 EUR
5000+0.087 EUR
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DMN3732UFB4-7 DMN3732UFB4-7 Diodes Incorporated DMN3732UFB4.pdf Description: MOSFET BVDSS: 25V~30V X2-DFN1006
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta)
Rds On (Max) @ Id, Vgs: 460mOhm @ 200mA, 4.5V
Power Dissipation (Max): 490mW (Ta)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: X2-DFN1006-3
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 40.8 pF @ 25 V
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BZX84C5V1Q-13-F BZX84C5V1Q-13-F Diodes Incorporated ds18001.pdf Description: DIODE ZENER 5.1V 300MW SOT23
Tolerance: ±5.88%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: SOT-23-3
Grade: Automotive
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 2 µA @ 2 V
Qualification: AEC-Q101
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BZX84C18Q-13-F BZX84C18Q-13-F Diodes Incorporated ds18001.pdf Description: DIODE ZENER 18V 300MW SOT23
Tolerance: ±6.39%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 45 Ohms
Supplier Device Package: SOT-23-3
Grade: Automotive
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 12.6 V
Qualification: AEC-Q101
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SDM10K45-7-F-79 SDM10K45-7-F-79 Diodes Incorporated Description: DIODE SCHOTTKY 45V 100MA SOD323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 6pF @ 10V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 10 mA
Current - Reverse Leakage @ Vr: 1 µA @ 10 V
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SDM100K30L-7-2477 SDM100K30L-7-2477 Diodes Incorporated Description: DIODE SCHOTTKY 30V 1A SOD323
Packaging: Bulk
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 22pF @ 10V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-323
Operating Temperature - Junction: -65°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 485 mV @ 1 A
Current - Reverse Leakage @ Vr: 100 µA @ 20 V
Produkt ist nicht verfügbar
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AS331KTR-G1 AS331KTR-G1 Diodes Incorporated AS331.pdf Description: IC COMPARATOR 1 GEN PUR SOT23-5
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Output Type: Open-Collector
Mounting Type: Surface Mount
Number of Elements: 1
Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply, Single/Dual (±): 2V ~ 36V, ±1V ~ 18V
Supplier Device Package: SOT-23-5
Current - Quiescent (Max): 1mA
Voltage - Input Offset (Max): 5mV @ 5V
Current - Input Bias (Max): 0.25µA @ 5V
Current - Output (Typ): 16mA @ 5V
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AS331KTR-G1 AS331KTR-G1 Diodes Incorporated AS331.pdf Description: IC COMPARATOR 1 GEN PUR SOT23-5
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Output Type: Open-Collector
Mounting Type: Surface Mount
Number of Elements: 1
Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply, Single/Dual (±): 2V ~ 36V, ±1V ~ 18V
Supplier Device Package: SOT-23-5
Current - Quiescent (Max): 1mA
Voltage - Input Offset (Max): 5mV @ 5V
Current - Input Bias (Max): 0.25µA @ 5V
Current - Output (Typ): 16mA @ 5V
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AM4406FMTR-G1 AM4406FMTR-G1 Diodes Incorporated Description: IC MOTOR DRIVER 4V-28V 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Function: Controller - Commutation, Direction Management
Current - Output: 70mA
Interface: On/Off
Operating Temperature: -40°C ~ 95°C (TA)
Output Configuration: Pre-Driver - Low Side (2)
Voltage - Supply: 4V ~ 28V
Applications: Fan Controller
Supplier Device Package: 8-SOIC
Motor Type - AC, DC: Brushless DC (BLDC)
Produkt ist nicht verfügbar
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AM4406FMTR-G1 AM4406FMTR-G1 Diodes Incorporated Description: IC MOTOR DRIVER 4V-28V 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Function: Controller - Commutation, Direction Management
Current - Output: 70mA
Interface: On/Off
Operating Temperature: -40°C ~ 95°C (TA)
Output Configuration: Pre-Driver - Low Side (2)
Voltage - Supply: 4V ~ 28V
Applications: Fan Controller
Supplier Device Package: 8-SOIC
Motor Type - AC, DC: Brushless DC (BLDC)
Produkt ist nicht verfügbar
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DXTN58100CFDB-7 DXTN58100CFDB-7 Diodes Incorporated DXTN58100CFDB.pdf Description: SS LOW SAT TRANSISTOR U-DFN2020-
Power - Max: 690 mW
Voltage - Collector Emitter Breakdown (Max): 100 V
Current - Collector (Ic) (Max): 4 A
Supplier Device Package: U-DFN2020-3 (Type B)
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 500mA, 2V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 260mV @ 400mA, 4A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: 3-UDFN Exposed Pad
Packaging: Cut Tape (CT)
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DXTN3C100PDQ-13 DXTN3C100PDQ-13 Diodes Incorporated DXTN3C100PDQ.pdf Description: TRANS 2NPN 100V 3A POWERDI5060-8
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.47W
Current - Collector (Ic) (Max): 3A
Voltage - Collector Emitter Breakdown (Max): 100V
Vce Saturation (Max) @ Ib, Ic: 330mV @ 300mA, 3A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 500mA, 10V
Frequency - Transition: 130MHz
Supplier Device Package: PowerDI5060-8 (Type UXD)
Grade: Automotive
Qualification: AEC-Q101
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10+2.2 EUR
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1000+0.64 EUR
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DXTC3C100PDQ-13 DXTC3C100PDQ-13 Diodes Incorporated DXTC3C100PDQ.pdf Description: TRANS NPN/PNP 100V POWERDI5060-8
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.47W
Current - Collector (Ic) (Max): 3A
Voltage - Collector Emitter Breakdown (Max): 100V
Vce Saturation (Max) @ Ib, Ic: 330mV @ 300mA, 3A / 325mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 500mA, 10V / 170 @ 500mA, 10V
Frequency - Transition: 130MHz, 100MHz
Supplier Device Package: PowerDI5060-8 (Type UXD)
Grade: Automotive
Qualification: AEC-Q101
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10+2.24 EUR
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500+0.73 EUR
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DXTP3C100PDQ-13 DXTP3C100PDQ-13 Diodes Incorporated DXTP3C100PDQ.pdf Description: SS Low Sat Transistor PowerDI506
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: PowerDI5060-8 (Type UXD)
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 170 @ 500mA, 10V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 325mV @ 200mA, 2A
Voltage - Collector Emitter Breakdown (Max): 100V
Current - Collector (Ic) (Max): 3A
Power - Max: 1.76W
Operating Temperature: -55°C ~ 175°C (TJ)
Transistor Type: 2 PNP (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Bulk
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FCX619QTA FCX619QTA Diodes Incorporated FCX619.pdf Description: TRANS NPN 50V 3A SOT-89-3
Qualification: AEC-Q101
Grade: Automotive
Power - Max: 700 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 3 A
Supplier Device Package: SOT-89-3
Frequency - Transition: 165MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 200mA, 2V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 320mV @ 100mA, 2.75A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Cut Tape (CT)
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ZXTP19100CZQTA ZXTP19100CZQTA Diodes Incorporated ZXTP19100CZ.pdf Description: PWR LOW SAT TRANSISTOR SOT89 T&R
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 295mV @ 200mA, 2A
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 142MHz
Supplier Device Package: SOT-89-3
Grade: Automotive
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.1 W
Qualification: AEC-Q101
auf Bestellung 107000 Stücke:
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1000+0.76 EUR
2000+0.73 EUR
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ZXTP19100CZQTA ZXTP19100CZQTA Diodes Incorporated ZXTP19100CZ.pdf Description: PWR LOW SAT TRANSISTOR SOT89 T&R
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 295mV @ 200mA, 2A
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 142MHz
Supplier Device Package: SOT-89-3
Grade: Automotive
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.1 W
Qualification: AEC-Q101
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DXTN5820DFDB-7 DXTN5820DFDB-7 Diodes Incorporated DXTN5820DFDB.pdf Description: SS LOW SAT TRANSISTOR U-DFN2020-
Packaging: Cut Tape (CT)
Package / Case: 3-UDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 275mV @ 300mA, 6A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 280 @ 500mA, 2V
Frequency - Transition: 80MHz
Supplier Device Package: U-DFN2020-3 (Type B)
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 690 mW
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21+1 EUR
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DXTN5860DFDB-7 DXTN5860DFDB-7 Diodes Incorporated DXTN5860DFDB.pdf Description: SS LOW SAT TRANSISTOR U-DFN2020-
Packaging: Cut Tape (CT)
Package / Case: 3-UDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 315mV @ 300mA, 6A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 280 @ 500mA, 2V
Frequency - Transition: 115MHz
Supplier Device Package: U-DFN2020-3 (Type B)
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 690 mW
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14+1.52 EUR
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DXTN5840CFDB-7 DXTN5840CFDB-7 Diodes Incorporated DXTN5840CFDB.pdf Description: TRANS NPN 40V 5A UDFN2020-3
Power - Max: 690 mW
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 5 A
Supplier Device Package: U-DFN2020-3 (Type B)
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1A, 2V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 350mV @ 30mA, 3A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: 3-UDFN Exposed Pad
Packaging: Cut Tape (CT)
auf Bestellung 11973 Stücke:
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15+1.44 EUR
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DXTP03140BFG-7 DXTP03140BFG-7 Diodes Incorporated DXTP03140BFG.pdf Description: TRANS PNP 140V 4A POWERDI3
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP
Operating Temperature: -55°C ~ 175°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 360mV @ 300mA, 3A
Current - Collector Cutoff (Max): 20nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 5V
Frequency - Transition: 120MHz
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 1.07 W
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DXTP03100BFG-7 DXTP03100BFG-7 Diodes Incorporated DXTP03100BFG.pdf Description: PWR LOW SAT TRANSISTOR POWERDI33
Power - Max: 1.07 W
Voltage - Collector Emitter Breakdown (Max): 100 V
Current - Collector (Ic) (Max): 5 A
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Frequency - Transition: 125MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 2V
Current - Collector Cutoff (Max): 50nA
Vce Saturation (Max) @ Ib, Ic: 340mV @ 400mA, 4A
Operating Temperature: -55°C ~ 175°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
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1N4448HWSQ-7-F 1N4448HWSQ-7-F Diodes Incorporated ds30196.pdf Description: DIODE STANDARD 80V 250MA SOD323
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 3.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 150
Voltage Coupled to Current - Reverse Leakage @ Vr: 80
Current - Reverse Leakage @ Vr: 100 nA @ 80 V
Reverse Recovery Time (trr): 4 ns
Voltage - DC Reverse (Vr) (Max): 80 V
Grade: Automotive
Qualification: AEC-Q101
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DFLT20A-7 DFLT20A-7 Diodes Incorporated DFLT5V0A_DFLT220A.pdf Description: TVS DIODE 20VWM 32.4VC PWRDI 123
Packaging: Tape & Reel (TR)
Package / Case: POWERDI®123
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 6.94A
Voltage - Reverse Standoff (Typ): 20V
Supplier Device Package: PowerDI™ 123
Unidirectional Channels: 1
Voltage - Breakdown (Min): 22.2V
Voltage - Clamping (Max) @ Ipp: 32.4V
Power - Peak Pulse: 225W
Power Line Protection: No
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DFLT20A-7 DFLT20A-7 Diodes Incorporated DFLT5V0A_DFLT220A.pdf Description: TVS DIODE 20VWM 32.4VC PWRDI 123
Packaging: Cut Tape (CT)
Package / Case: POWERDI®123
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 6.94A
Voltage - Reverse Standoff (Typ): 20V
Supplier Device Package: PowerDI™ 123
Unidirectional Channels: 1
Voltage - Breakdown (Min): 22.2V
Voltage - Clamping (Max) @ Ipp: 32.4V
Power - Peak Pulse: 225W
Power Line Protection: No
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DFLT28A-7 DFLT28A-7 Diodes Incorporated DFLT5V0A_DFLT220A.pdf Description: TVS DIODE 28VWM 45.4VC PWRDI 123
Packaging: Tape & Reel (TR)
Package / Case: POWERDI®123
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 4.96A
Voltage - Reverse Standoff (Typ): 28V
Supplier Device Package: PowerDI™ 123
Unidirectional Channels: 1
Voltage - Breakdown (Min): 31.1V
Voltage - Clamping (Max) @ Ipp: 45.4V
Power - Peak Pulse: 225W
Power Line Protection: No
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3000+0.26 EUR
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DFLT28A-7 DFLT28A-7 Diodes Incorporated DFLT5V0A_DFLT220A.pdf Description: TVS DIODE 28VWM 45.4VC PWRDI 123
Packaging: Cut Tape (CT)
Package / Case: POWERDI®123
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 4.96A
Voltage - Reverse Standoff (Typ): 28V
Supplier Device Package: PowerDI™ 123
Unidirectional Channels: 1
Voltage - Breakdown (Min): 31.1V
Voltage - Clamping (Max) @ Ipp: 45.4V
Power - Peak Pulse: 225W
Power Line Protection: No
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500+0.35 EUR
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DFLT8V5A-7 DFLT8V5A-7 Diodes Incorporated DFLT5V0A_DFLT220A.pdf Description: TVS DIODE 8.5VWM 14.4V PWRDI 123
Packaging: Tape & Reel (TR)
Package / Case: POWERDI®123
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 15.6A
Voltage - Reverse Standoff (Typ): 8.5V
Supplier Device Package: PowerDI™ 123
Unidirectional Channels: 1
Voltage - Breakdown (Min): 9.44V
Voltage - Clamping (Max) @ Ipp: 14.4V
Power - Peak Pulse: 225W
Power Line Protection: No
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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DFLT8V5A-7 DFLT8V5A-7 Diodes Incorporated DFLT5V0A_DFLT220A.pdf Description: TVS DIODE 8.5VWM 14.4V PWRDI 123
Packaging: Cut Tape (CT)
Package / Case: POWERDI®123
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 15.6A
Voltage - Reverse Standoff (Typ): 8.5V
Supplier Device Package: PowerDI™ 123
Unidirectional Channels: 1
Voltage - Breakdown (Min): 9.44V
Voltage - Clamping (Max) @ Ipp: 14.4V
Power - Peak Pulse: 225W
Power Line Protection: No
Produkt ist nicht verfügbar
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DFLZ5V6Q-7 DFLZ5V6Q-7 Diodes Incorporated DFLZxxQ.pdf Description: DIODE ZENER 5.6V 1W POWERDI 123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: POWERDI®123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 1 Ohms
Supplier Device Package: PowerDI™ 123
Grade: Automotive
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 200
Voltage Coupled to Current - Reverse Leakage @ Vr: 2
Current - Reverse Leakage @ Vr: 10 µA @ 2 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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DFLZ5V6Q-7 DFLZ5V6Q-7 Diodes Incorporated DFLZxxQ.pdf Description: DIODE ZENER 5.6V 1W POWERDI 123
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: POWERDI®123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 1 Ohms
Supplier Device Package: PowerDI™ 123
Grade: Automotive
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 200
Voltage Coupled to Current - Reverse Leakage @ Vr: 2
Current - Reverse Leakage @ Vr: 10 µA @ 2 V
Qualification: AEC-Q101
auf Bestellung 574 Stücke:
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26+0.82 EUR
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DFLZ13Q-7 DFLZ13Q-7 Diodes Incorporated DFLZxxQ.pdf Description: DIODE ZENER 13V 1W POWERDI 123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: POWERDI®123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 1 Ohms
Supplier Device Package: PowerDI™ 123
Grade: Automotive
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 200
Voltage Coupled to Current - Reverse Leakage @ Vr: 10
Current - Reverse Leakage @ Vr: 2 µA @ 10 V
Qualification: AEC-Q101
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DFLZ13Q-7 DFLZ13Q-7 Diodes Incorporated DFLZxxQ.pdf Description: DIODE ZENER 13V 1W POWERDI 123
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: POWERDI®123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 1 Ohms
Supplier Device Package: PowerDI™ 123
Grade: Automotive
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 200
Voltage Coupled to Current - Reverse Leakage @ Vr: 10
Current - Reverse Leakage @ Vr: 2 µA @ 10 V
Qualification: AEC-Q101
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DFLZ39Q-7 DFLZ39Q-7 Diodes Incorporated DFLZxxQ.pdf Description: DIODE ZENER 39V 1W POWERDI 123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: POWERDI®123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 39 V
Impedance (Max) (Zzt): 5 Ohms
Supplier Device Package: PowerDI™ 123
Grade: Automotive
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 200
Voltage Coupled to Current - Reverse Leakage @ Vr: 30
Current - Reverse Leakage @ Vr: 1 µA @ 30 V
Qualification: AEC-Q101
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DFLZ39Q-7 DFLZ39Q-7 Diodes Incorporated DFLZxxQ.pdf Description: DIODE ZENER 39V 1W POWERDI 123
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: POWERDI®123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Supplier Device Package: PowerDI™ 123
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 200
Voltage Coupled to Current - Reverse Leakage @ Vr: 30
Current - Reverse Leakage @ Vr: 1 µA @ 30 V
Voltage - Zener (Nom) (Vz): 39 V
Impedance (Max) (Zzt): 5 Ohms
Power - Max: 1 W
Grade: Automotive
Qualification: AEC-Q101
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DFLZ5V1Q-7 DFLZ5V1Q-7 Diodes Incorporated DFLZxxQ.pdf Description: DIODE ZENER 5.1V 1W POWERDI 123
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: POWERDI®123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Supplier Device Package: PowerDI™ 123
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 200
Voltage Coupled to Current - Reverse Leakage @ Vr: 1
Current - Reverse Leakage @ Vr: 2.5 µA @ 1 V
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 2 Ohms
Power - Max: 1 W
Grade: Automotive
Qualification: AEC-Q101
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DFLZ5V1Q-7 DFLZ5V1Q-7 Diodes Incorporated DFLZxxQ.pdf Description: DIODE ZENER 5.1V 1W POWERDI 123
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: POWERDI®123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Supplier Device Package: PowerDI™ 123
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 200
Voltage Coupled to Current - Reverse Leakage @ Vr: 1
Current - Reverse Leakage @ Vr: 2.5 µA @ 1 V
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 2 Ohms
Power - Max: 1 W
Grade: Automotive
Qualification: AEC-Q101
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100+0.51 EUR
500+0.39 EUR
1000+0.36 EUR
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DFLS240Q-7 DFLS240Q-7 Diodes Incorporated DFLS240Q.pdf Description: DIODE SCHOTTK 40V 2A POWERDI 123
Packaging: Tape & Reel (TR)
Package / Case: POWERDI®123
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 28pF @ 10V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: PowerDI™ 123
Operating Temperature - Junction: -65°C ~ 125°C
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 2 A
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 2
Voltage Coupled to Current - Reverse Leakage @ Vr: 40
Current - Reverse Leakage @ Vr: 20 µA @ 40 V
Voltage - DC Reverse (Vr) (Max): 40 V
Grade: Automotive
Qualification: AEC-Q101
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6000+0.42 EUR
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DFLS240Q-7 DFLS240Q-7 Diodes Incorporated DFLS240Q.pdf Description: DIODE SCHOTTK 40V 2A POWERDI 123
Packaging: Cut Tape (CT)
Package / Case: POWERDI®123
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 28pF @ 10V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: PowerDI™ 123
Operating Temperature - Junction: -65°C ~ 125°C
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 2 A
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 2
Voltage Coupled to Current - Reverse Leakage @ Vr: 40
Current - Reverse Leakage @ Vr: 20 µA @ 40 V
Voltage - DC Reverse (Vr) (Max): 40 V
Grade: Automotive
Qualification: AEC-Q101
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DMT34M1LPS-13 DMT34M1LPS-13 Diodes Incorporated DMT34M1LPS.pdf Description: MOSFET N-CH 30V 100A PWRDI5060-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 20A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2242 pF @ 15 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 15
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DMT34M1LPS-13 DMT34M1LPS-13 Diodes Incorporated DMT34M1LPS.pdf Description: MOSFET N-CH 30V 100A PWRDI5060-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 20A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2242 pF @ 15 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 15
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MBR10200CT-G1 MBR10200CT-G1 Diodes Incorporated MBR10200C.pdf Description: DIODE ARR SCHOTT 200V 5A TO2203
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 5 A
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 5
Voltage Coupled to Current - Reverse Leakage @ Vr: 200
Current - Reverse Leakage @ Vr: 150 µA @ 200 V
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BZX84C5V1Q-13-F BZX84C5V1Q-13-F Diodes Incorporated ds18001.pdf Description: DIODE ZENER 5.1V 300MW SOT23
Tolerance: ±5.88%
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: SOT-23-3
Grade: Automotive
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 2 µA @ 2 V
Qualification: AEC-Q101
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81+0.26 EUR
93+0.23 EUR
107+0.2 EUR
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PI6CG330440AZUDIEX-13R PI6CG330440AZUDIEX-13R Diodes Incorporated PI6CG330440A.pdf Description: CLOCK GENERATOR U-QFN8080-100 T&
Packaging: Tape & Reel (TR)
Package / Case: 100-UFQFN Dual Rows, Exposed Pad
Mounting Type: Surface Mount
Output: HCSL
Frequency - Max: 100MHz
Type: Clock Generator
Input: HCSL, Crystal
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3.135V ~ 3.465V
Ratio - Input:Output: 2:19
Differential - Input:Output: Yes/Yes
Supplier Device Package: 100-UQFN (8x8)
PLL: Yes
Divider/Multiplier: No/No
Number of Circuits: 1
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DMNH6042SPS-13 DMNH6042SPS.pdf
DMNH6042SPS-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 24A PWRDI5060-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 5.1A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 584 pF @ 25 V
Qualification: AEC-Q101
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AnzahlPrivatkunde
2500+0.45 EUR
5000+0.42 EUR
7500+0.4 EUR
12500+0.38 EUR
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DMNH6042SPS-13 DMNH6042SPS.pdf
DMNH6042SPS-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 24A PWRDI5060-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 5.1A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 584 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 76005 Stücke:
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AnzahlPrivatkunde
12+1.76 EUR
19+1.15 EUR
100+0.76 EUR
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DMTH8003SPS-13 DMTH8003SPS.pdf
DMTH8003SPS-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 80V 100A PWRDI5060-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 30A, 10V
Power Dissipation (Max): 2.9W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type K)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 124.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8952 pF @ 40 V
Produkt ist nicht verfügbar
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DMTH8003SPS-13 DMTH8003SPS.pdf
DMTH8003SPS-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 80V 100A PWRDI5060-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 30A, 10V
Power Dissipation (Max): 2.9W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type K)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 124.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8952 pF @ 40 V
auf Bestellung 3554 Stücke:
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4+5.55 EUR
10+3.58 EUR
25+3.06 EUR
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DMTH61M8LPS-13 DMTH61M8LPS.pdf
DMTH61M8LPS-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 225A PWRDI
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 225A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 30A, 10V
Power Dissipation (Max): 3.2W (Ta), 187.5W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 115.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8320 pF @ 30 V
Produkt ist nicht verfügbar
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DMTH61M8LPS-13 DMTH61M8LPS.pdf
DMTH61M8LPS-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 225A PWRDI
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 225A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 30A, 10V
Power Dissipation (Max): 3.2W (Ta), 187.5W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 115.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8320 pF @ 30 V
auf Bestellung 2400 Stücke:
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AnzahlPrivatkunde
4+6.15 EUR
10+4 EUR
100+2.77 EUR
500+2.25 EUR
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DXTN3C60PS-13 DXTN3C60PS.pdf
DXTN3C60PS-13
Hersteller: Diodes Incorporated
Description: TRANS NPN 60V 3A POWERDI5060-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 175°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 270mV @ 300mA, 3A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Frequency - Transition: 140MHz
Supplier Device Package: PowerDI5060-8
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 2.25 W
Produkt ist nicht verfügbar
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DXTN3C60PS-13 DXTN3C60PS.pdf
DXTN3C60PS-13
Hersteller: Diodes Incorporated
Description: TRANS NPN 60V 3A POWERDI5060-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 175°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 270mV @ 300mA, 3A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Frequency - Transition: 140MHz
Supplier Device Package: PowerDI5060-8
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 2.25 W
Produkt ist nicht verfügbar
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DMT30M9LPS-13 DMT30M9LPS.pdf
DMT30M9LPS-13
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 25V-30V POWERDI506
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1mOhm @ 25A, 10V
Power Dissipation (Max): 2.6W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type K)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 160.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12121 pF @ 20 V
Produkt ist nicht verfügbar
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DMT30M9LPS-13 DMT30M9LPS.pdf
DMT30M9LPS-13
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 25V-30V POWERDI506
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1mOhm @ 25A, 10V
Power Dissipation (Max): 2.6W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type K)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 160.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12121 pF @ 20 V
auf Bestellung 2487 Stücke:
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10+4.84 EUR
25+4.15 EUR
50+3.74 EUR
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DMTH41M2SPS-13 DMTH41M2SPS.pdf
DMTH41M2SPS-13
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 31V~40V POWERDI506
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 225A (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 30A, 10V
Power Dissipation (Max): 3.4W (Ta), 158W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type K)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 138 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11085 pF @ 20 V
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DMTH41M2SPS-13 DMTH41M2SPS.pdf
DMTH41M2SPS-13
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 31V~40V POWERDI506
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 225A (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 30A, 10V
Power Dissipation (Max): 3.4W (Ta), 158W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type K)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 138 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11085 pF @ 20 V
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DMWSH120H90SM4Q DMWSH120H90SM4Q.pdf
DMWSH120H90SM4Q
Hersteller: Diodes Incorporated
Description: SICFET N-CH 1200V TO-247
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 97.5mOhm @ 20A, 15V
Power Dissipation (Max): 235W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 5mA
Supplier Device Package: TO-247-4
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 47.6 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1112 pF @ 1000 V
Qualification: AEC-Q101
auf Bestellung 6347 Stücke:
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120+12.84 EUR
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DMN63D8LW-13 DMN63D8LW.pdf
DMN63D8LW-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 380MA SOT323
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Input Capacitance (Ciss) (Max) @ Vds: 23.2 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 0.9 nC @ 10 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Supplier Device Package: SOT-323
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 300mW (Ta)
Rds On (Max) @ Id, Vgs: 2.8Ohm @ 250mA, 10V
Current - Continuous Drain (Id) @ 25°C: 380mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
Drain to Source Voltage (Vdss): 30 V
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3.0SMCJ33A-13 3.0SMCJ5.0CA-3.0SMCJ170CA.pdf
3.0SMCJ33A-13
Hersteller: Diodes Incorporated
Description: TVS DIODE 33VWM 53.3VC SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 56.3A
Voltage - Reverse Standoff (Typ): 33V
Supplier Device Package: SMC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 36.7V
Voltage - Clamping (Max) @ Ipp: 53.3V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
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DMN3732UFB4-7B DMN3732UFB4.pdf
DMN3732UFB4-7B
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 25V~30V X2-DFN1006
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta)
Rds On (Max) @ Id, Vgs: 460mOhm @ 200mA, 4.5V
Power Dissipation (Max): 490mW (Ta)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: X2-DFN1006-3
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 40.8 pF @ 25 V
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DMN3732UFB4-7B DMN3732UFB4.pdf
DMN3732UFB4-7B
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 25V~30V X2-DFN1006
Packaging: Cut Tape (CT)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta)
Rds On (Max) @ Id, Vgs: 460mOhm @ 200mA, 4.5V
Power Dissipation (Max): 490mW (Ta)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: X2-DFN1006-3
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 40.8 pF @ 25 V
auf Bestellung 7777 Stücke:
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38+0.57 EUR
55+0.38 EUR
112+0.19 EUR
500+0.15 EUR
1000+0.11 EUR
2000+0.094 EUR
5000+0.087 EUR
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DMN3732UFB4-7 DMN3732UFB4.pdf
DMN3732UFB4-7
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 25V~30V X2-DFN1006
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta)
Rds On (Max) @ Id, Vgs: 460mOhm @ 200mA, 4.5V
Power Dissipation (Max): 490mW (Ta)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: X2-DFN1006-3
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 40.8 pF @ 25 V
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BZX84C5V1Q-13-F ds18001.pdf
BZX84C5V1Q-13-F
Hersteller: Diodes Incorporated
Description: DIODE ZENER 5.1V 300MW SOT23
Tolerance: ±5.88%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: SOT-23-3
Grade: Automotive
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 2 µA @ 2 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BZX84C18Q-13-F ds18001.pdf
BZX84C18Q-13-F
Hersteller: Diodes Incorporated
Description: DIODE ZENER 18V 300MW SOT23
Tolerance: ±6.39%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 45 Ohms
Supplier Device Package: SOT-23-3
Grade: Automotive
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 12.6 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SDM10K45-7-F-79
SDM10K45-7-F-79
Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 45V 100MA SOD323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 6pF @ 10V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 10 mA
Current - Reverse Leakage @ Vr: 1 µA @ 10 V
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SDM100K30L-7-2477
SDM100K30L-7-2477
Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 30V 1A SOD323
Packaging: Bulk
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 22pF @ 10V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-323
Operating Temperature - Junction: -65°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 485 mV @ 1 A
Current - Reverse Leakage @ Vr: 100 µA @ 20 V
Produkt ist nicht verfügbar
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AS331KTR-G1 AS331.pdf
AS331KTR-G1
Hersteller: Diodes Incorporated
Description: IC COMPARATOR 1 GEN PUR SOT23-5
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Output Type: Open-Collector
Mounting Type: Surface Mount
Number of Elements: 1
Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply, Single/Dual (±): 2V ~ 36V, ±1V ~ 18V
Supplier Device Package: SOT-23-5
Current - Quiescent (Max): 1mA
Voltage - Input Offset (Max): 5mV @ 5V
Current - Input Bias (Max): 0.25µA @ 5V
Current - Output (Typ): 16mA @ 5V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.17 EUR
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AS331KTR-G1 AS331.pdf
AS331KTR-G1
Hersteller: Diodes Incorporated
Description: IC COMPARATOR 1 GEN PUR SOT23-5
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Output Type: Open-Collector
Mounting Type: Surface Mount
Number of Elements: 1
Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply, Single/Dual (±): 2V ~ 36V, ±1V ~ 18V
Supplier Device Package: SOT-23-5
Current - Quiescent (Max): 1mA
Voltage - Input Offset (Max): 5mV @ 5V
Current - Input Bias (Max): 0.25µA @ 5V
Current - Output (Typ): 16mA @ 5V
auf Bestellung 4193 Stücke:
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50+0.42 EUR
74+0.29 EUR
84+0.25 EUR
100+0.21 EUR
250+0.2 EUR
500+0.19 EUR
1000+0.18 EUR
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AM4406FMTR-G1
AM4406FMTR-G1
Hersteller: Diodes Incorporated
Description: IC MOTOR DRIVER 4V-28V 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Function: Controller - Commutation, Direction Management
Current - Output: 70mA
Interface: On/Off
Operating Temperature: -40°C ~ 95°C (TA)
Output Configuration: Pre-Driver - Low Side (2)
Voltage - Supply: 4V ~ 28V
Applications: Fan Controller
Supplier Device Package: 8-SOIC
Motor Type - AC, DC: Brushless DC (BLDC)
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AM4406FMTR-G1
AM4406FMTR-G1
Hersteller: Diodes Incorporated
Description: IC MOTOR DRIVER 4V-28V 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Function: Controller - Commutation, Direction Management
Current - Output: 70mA
Interface: On/Off
Operating Temperature: -40°C ~ 95°C (TA)
Output Configuration: Pre-Driver - Low Side (2)
Voltage - Supply: 4V ~ 28V
Applications: Fan Controller
Supplier Device Package: 8-SOIC
Motor Type - AC, DC: Brushless DC (BLDC)
Produkt ist nicht verfügbar
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DXTN58100CFDB-7 DXTN58100CFDB.pdf
DXTN58100CFDB-7
Hersteller: Diodes Incorporated
Description: SS LOW SAT TRANSISTOR U-DFN2020-
Power - Max: 690 mW
Voltage - Collector Emitter Breakdown (Max): 100 V
Current - Collector (Ic) (Max): 4 A
Supplier Device Package: U-DFN2020-3 (Type B)
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 500mA, 2V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 260mV @ 400mA, 4A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: 3-UDFN Exposed Pad
Packaging: Cut Tape (CT)
auf Bestellung 690 Stücke:
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20+1.05 EUR
24+0.88 EUR
100+0.61 EUR
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DXTN3C100PDQ-13 DXTN3C100PDQ.pdf
DXTN3C100PDQ-13
Hersteller: Diodes Incorporated
Description: TRANS 2NPN 100V 3A POWERDI5060-8
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.47W
Current - Collector (Ic) (Max): 3A
Voltage - Collector Emitter Breakdown (Max): 100V
Vce Saturation (Max) @ Ib, Ic: 330mV @ 300mA, 3A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 500mA, 10V
Frequency - Transition: 130MHz
Supplier Device Package: PowerDI5060-8 (Type UXD)
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3951 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
10+2.2 EUR
16+1.39 EUR
100+0.92 EUR
500+0.71 EUR
1000+0.64 EUR
2500+0.57 EUR
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DXTC3C100PDQ-13 DXTC3C100PDQ.pdf
DXTC3C100PDQ-13
Hersteller: Diodes Incorporated
Description: TRANS NPN/PNP 100V POWERDI5060-8
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.47W
Current - Collector (Ic) (Max): 3A
Voltage - Collector Emitter Breakdown (Max): 100V
Vce Saturation (Max) @ Ib, Ic: 330mV @ 300mA, 3A / 325mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 500mA, 10V / 170 @ 500mA, 10V
Frequency - Transition: 130MHz, 100MHz
Supplier Device Package: PowerDI5060-8 (Type UXD)
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 37098 Stücke:
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AnzahlPrivatkunde
10+2.24 EUR
15+1.4 EUR
100+0.93 EUR
500+0.73 EUR
1000+0.65 EUR
2500+0.58 EUR
5000+0.54 EUR
10000+0.5 EUR
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DXTP3C100PDQ-13 DXTP3C100PDQ.pdf
DXTP3C100PDQ-13
Hersteller: Diodes Incorporated
Description: SS Low Sat Transistor PowerDI506
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: PowerDI5060-8 (Type UXD)
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 170 @ 500mA, 10V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 325mV @ 200mA, 2A
Voltage - Collector Emitter Breakdown (Max): 100V
Current - Collector (Ic) (Max): 3A
Power - Max: 1.76W
Operating Temperature: -55°C ~ 175°C (TJ)
Transistor Type: 2 PNP (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Bulk
auf Bestellung 1481 Stücke:
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AnzahlPrivatkunde
14+1.59 EUR
16+1.39 EUR
100+0.96 EUR
500+0.8 EUR
1000+0.68 EUR
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FCX619QTA FCX619.pdf
FCX619QTA
Hersteller: Diodes Incorporated
Description: TRANS NPN 50V 3A SOT-89-3
Qualification: AEC-Q101
Grade: Automotive
Power - Max: 700 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 3 A
Supplier Device Package: SOT-89-3
Frequency - Transition: 165MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 200mA, 2V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 320mV @ 100mA, 2.75A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Cut Tape (CT)
auf Bestellung 56970 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
11+2.05 EUR
17+1.3 EUR
100+0.84 EUR
500+0.65 EUR
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ZXTP19100CZQTA ZXTP19100CZ.pdf
ZXTP19100CZQTA
Hersteller: Diodes Incorporated
Description: PWR LOW SAT TRANSISTOR SOT89 T&R
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 295mV @ 200mA, 2A
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 142MHz
Supplier Device Package: SOT-89-3
Grade: Automotive
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.1 W
Qualification: AEC-Q101
auf Bestellung 107000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1000+0.76 EUR
2000+0.73 EUR
5000+0.69 EUR
10000+0.65 EUR
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ZXTP19100CZQTA ZXTP19100CZ.pdf
ZXTP19100CZQTA
Hersteller: Diodes Incorporated
Description: PWR LOW SAT TRANSISTOR SOT89 T&R
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 295mV @ 200mA, 2A
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 142MHz
Supplier Device Package: SOT-89-3
Grade: Automotive
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.1 W
Qualification: AEC-Q101
auf Bestellung 107000 Stücke:
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13+1.74 EUR
15+1.43 EUR
100+1.11 EUR
500+0.94 EUR
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DXTN5820DFDB-7 DXTN5820DFDB.pdf
DXTN5820DFDB-7
Hersteller: Diodes Incorporated
Description: SS LOW SAT TRANSISTOR U-DFN2020-
Packaging: Cut Tape (CT)
Package / Case: 3-UDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 275mV @ 300mA, 6A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 280 @ 500mA, 2V
Frequency - Transition: 80MHz
Supplier Device Package: U-DFN2020-3 (Type B)
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 690 mW
auf Bestellung 6000 Stücke:
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21+1 EUR
25+0.84 EUR
100+0.58 EUR
500+0.46 EUR
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DXTN5860DFDB-7 DXTN5860DFDB.pdf
DXTN5860DFDB-7
Hersteller: Diodes Incorporated
Description: SS LOW SAT TRANSISTOR U-DFN2020-
Packaging: Cut Tape (CT)
Package / Case: 3-UDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 315mV @ 300mA, 6A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 280 @ 500mA, 2V
Frequency - Transition: 115MHz
Supplier Device Package: U-DFN2020-3 (Type B)
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 690 mW
auf Bestellung 8998 Stücke:
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AnzahlPrivatkunde
14+1.52 EUR
23+0.95 EUR
100+0.61 EUR
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DXTN5840CFDB-7 DXTN5840CFDB.pdf
DXTN5840CFDB-7
Hersteller: Diodes Incorporated
Description: TRANS NPN 40V 5A UDFN2020-3
Power - Max: 690 mW
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 5 A
Supplier Device Package: U-DFN2020-3 (Type B)
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1A, 2V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 350mV @ 30mA, 3A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: 3-UDFN Exposed Pad
Packaging: Cut Tape (CT)
auf Bestellung 11973 Stücke:
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15+1.44 EUR
24+0.9 EUR
100+0.58 EUR
500+0.44 EUR
1000+0.4 EUR
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DXTP03140BFG-7 DXTP03140BFG.pdf
DXTP03140BFG-7
Hersteller: Diodes Incorporated
Description: TRANS PNP 140V 4A POWERDI3
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP
Operating Temperature: -55°C ~ 175°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 360mV @ 300mA, 3A
Current - Collector Cutoff (Max): 20nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 5V
Frequency - Transition: 120MHz
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 1.07 W
auf Bestellung 7830 Stücke:
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15+1.49 EUR
23+0.92 EUR
100+0.6 EUR
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DXTP03100BFG-7 DXTP03100BFG.pdf
DXTP03100BFG-7
Hersteller: Diodes Incorporated
Description: PWR LOW SAT TRANSISTOR POWERDI33
Power - Max: 1.07 W
Voltage - Collector Emitter Breakdown (Max): 100 V
Current - Collector (Ic) (Max): 5 A
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Frequency - Transition: 125MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 2V
Current - Collector Cutoff (Max): 50nA
Vce Saturation (Max) @ Ib, Ic: 340mV @ 400mA, 4A
Operating Temperature: -55°C ~ 175°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
auf Bestellung 11980 Stücke:
Lieferzeit 10-14 Tag (e)
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19+1.11 EUR
22+0.96 EUR
100+0.67 EUR
500+0.56 EUR
1000+0.48 EUR
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1N4448HWSQ-7-F ds30196.pdf
1N4448HWSQ-7-F
Hersteller: Diodes Incorporated
Description: DIODE STANDARD 80V 250MA SOD323
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 3.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 150
Voltage Coupled to Current - Reverse Leakage @ Vr: 80
Current - Reverse Leakage @ Vr: 100 nA @ 80 V
Reverse Recovery Time (trr): 4 ns
Voltage - DC Reverse (Vr) (Max): 80 V
Grade: Automotive
Qualification: AEC-Q101
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DFLT20A-7 DFLT5V0A_DFLT220A.pdf
DFLT20A-7
Hersteller: Diodes Incorporated
Description: TVS DIODE 20VWM 32.4VC PWRDI 123
Packaging: Tape & Reel (TR)
Package / Case: POWERDI®123
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 6.94A
Voltage - Reverse Standoff (Typ): 20V
Supplier Device Package: PowerDI™ 123
Unidirectional Channels: 1
Voltage - Breakdown (Min): 22.2V
Voltage - Clamping (Max) @ Ipp: 32.4V
Power - Peak Pulse: 225W
Power Line Protection: No
auf Bestellung 39000 Stücke:
Lieferzeit 10-14 Tag (e)
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3000+0.26 EUR
6000+0.24 EUR
9000+0.23 EUR
15000+0.21 EUR
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DFLT20A-7 DFLT5V0A_DFLT220A.pdf
DFLT20A-7
Hersteller: Diodes Incorporated
Description: TVS DIODE 20VWM 32.4VC PWRDI 123
Packaging: Cut Tape (CT)
Package / Case: POWERDI®123
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 6.94A
Voltage - Reverse Standoff (Typ): 20V
Supplier Device Package: PowerDI™ 123
Unidirectional Channels: 1
Voltage - Breakdown (Min): 22.2V
Voltage - Clamping (Max) @ Ipp: 32.4V
Power - Peak Pulse: 225W
Power Line Protection: No
auf Bestellung 41298 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
18+1.18 EUR
30+0.71 EUR
100+0.46 EUR
500+0.35 EUR
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DFLT28A-7 DFLT5V0A_DFLT220A.pdf
DFLT28A-7
Hersteller: Diodes Incorporated
Description: TVS DIODE 28VWM 45.4VC PWRDI 123
Packaging: Tape & Reel (TR)
Package / Case: POWERDI®123
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 4.96A
Voltage - Reverse Standoff (Typ): 28V
Supplier Device Package: PowerDI™ 123
Unidirectional Channels: 1
Voltage - Breakdown (Min): 31.1V
Voltage - Clamping (Max) @ Ipp: 45.4V
Power - Peak Pulse: 225W
Power Line Protection: No
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
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3000+0.26 EUR
6000+0.24 EUR
9000+0.23 EUR
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DFLT28A-7 DFLT5V0A_DFLT220A.pdf
DFLT28A-7
Hersteller: Diodes Incorporated
Description: TVS DIODE 28VWM 45.4VC PWRDI 123
Packaging: Cut Tape (CT)
Package / Case: POWERDI®123
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 4.96A
Voltage - Reverse Standoff (Typ): 28V
Supplier Device Package: PowerDI™ 123
Unidirectional Channels: 1
Voltage - Breakdown (Min): 31.1V
Voltage - Clamping (Max) @ Ipp: 45.4V
Power - Peak Pulse: 225W
Power Line Protection: No
auf Bestellung 10525 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
18+1.18 EUR
30+0.71 EUR
100+0.46 EUR
500+0.35 EUR
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DFLT8V5A-7 DFLT5V0A_DFLT220A.pdf
DFLT8V5A-7
Hersteller: Diodes Incorporated
Description: TVS DIODE 8.5VWM 14.4V PWRDI 123
Packaging: Tape & Reel (TR)
Package / Case: POWERDI®123
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 15.6A
Voltage - Reverse Standoff (Typ): 8.5V
Supplier Device Package: PowerDI™ 123
Unidirectional Channels: 1
Voltage - Breakdown (Min): 9.44V
Voltage - Clamping (Max) @ Ipp: 14.4V
Power - Peak Pulse: 225W
Power Line Protection: No
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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DFLT8V5A-7 DFLT5V0A_DFLT220A.pdf
DFLT8V5A-7
Hersteller: Diodes Incorporated
Description: TVS DIODE 8.5VWM 14.4V PWRDI 123
Packaging: Cut Tape (CT)
Package / Case: POWERDI®123
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 15.6A
Voltage - Reverse Standoff (Typ): 8.5V
Supplier Device Package: PowerDI™ 123
Unidirectional Channels: 1
Voltage - Breakdown (Min): 9.44V
Voltage - Clamping (Max) @ Ipp: 14.4V
Power - Peak Pulse: 225W
Power Line Protection: No
Produkt ist nicht verfügbar
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DFLZ5V6Q-7 DFLZxxQ.pdf
DFLZ5V6Q-7
Hersteller: Diodes Incorporated
Description: DIODE ZENER 5.6V 1W POWERDI 123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: POWERDI®123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 1 Ohms
Supplier Device Package: PowerDI™ 123
Grade: Automotive
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 200
Voltage Coupled to Current - Reverse Leakage @ Vr: 2
Current - Reverse Leakage @ Vr: 10 µA @ 2 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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DFLZ5V6Q-7 DFLZxxQ.pdf
DFLZ5V6Q-7
Hersteller: Diodes Incorporated
Description: DIODE ZENER 5.6V 1W POWERDI 123
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: POWERDI®123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 1 Ohms
Supplier Device Package: PowerDI™ 123
Grade: Automotive
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 200
Voltage Coupled to Current - Reverse Leakage @ Vr: 2
Current - Reverse Leakage @ Vr: 10 µA @ 2 V
Qualification: AEC-Q101
auf Bestellung 574 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
16+1.32 EUR
26+0.82 EUR
100+0.52 EUR
500+0.4 EUR
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DFLZ13Q-7 DFLZxxQ.pdf
DFLZ13Q-7
Hersteller: Diodes Incorporated
Description: DIODE ZENER 13V 1W POWERDI 123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: POWERDI®123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 1 Ohms
Supplier Device Package: PowerDI™ 123
Grade: Automotive
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 200
Voltage Coupled to Current - Reverse Leakage @ Vr: 10
Current - Reverse Leakage @ Vr: 2 µA @ 10 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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DFLZ13Q-7 DFLZxxQ.pdf
DFLZ13Q-7
Hersteller: Diodes Incorporated
Description: DIODE ZENER 13V 1W POWERDI 123
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: POWERDI®123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 1 Ohms
Supplier Device Package: PowerDI™ 123
Grade: Automotive
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 200
Voltage Coupled to Current - Reverse Leakage @ Vr: 10
Current - Reverse Leakage @ Vr: 2 µA @ 10 V
Qualification: AEC-Q101
auf Bestellung 1229 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
17+1.3 EUR
26+0.81 EUR
100+0.51 EUR
500+0.39 EUR
1000+0.36 EUR
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DFLZ39Q-7 DFLZxxQ.pdf
DFLZ39Q-7
Hersteller: Diodes Incorporated
Description: DIODE ZENER 39V 1W POWERDI 123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: POWERDI®123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 39 V
Impedance (Max) (Zzt): 5 Ohms
Supplier Device Package: PowerDI™ 123
Grade: Automotive
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 200
Voltage Coupled to Current - Reverse Leakage @ Vr: 30
Current - Reverse Leakage @ Vr: 1 µA @ 30 V
Qualification: AEC-Q101
auf Bestellung 27000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.3 EUR
6000+0.27 EUR
9000+0.26 EUR
15000+0.25 EUR
21000+0.24 EUR
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DFLZ39Q-7 DFLZxxQ.pdf
DFLZ39Q-7
Hersteller: Diodes Incorporated
Description: DIODE ZENER 39V 1W POWERDI 123
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: POWERDI®123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Supplier Device Package: PowerDI™ 123
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 200
Voltage Coupled to Current - Reverse Leakage @ Vr: 30
Current - Reverse Leakage @ Vr: 1 µA @ 30 V
Voltage - Zener (Nom) (Vz): 39 V
Impedance (Max) (Zzt): 5 Ohms
Power - Max: 1 W
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 28520 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
17+1.3 EUR
26+0.81 EUR
100+0.51 EUR
500+0.39 EUR
1000+0.36 EUR
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DFLZ5V1Q-7 DFLZxxQ.pdf
DFLZ5V1Q-7
Hersteller: Diodes Incorporated
Description: DIODE ZENER 5.1V 1W POWERDI 123
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: POWERDI®123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Supplier Device Package: PowerDI™ 123
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 200
Voltage Coupled to Current - Reverse Leakage @ Vr: 1
Current - Reverse Leakage @ Vr: 2.5 µA @ 1 V
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 2 Ohms
Power - Max: 1 W
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 72000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.3 EUR
6000+0.27 EUR
9000+0.26 EUR
15000+0.25 EUR
21000+0.24 EUR
30000+0.23 EUR
Mindestbestellmenge: 3000 Stücke
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DFLZ5V1Q-7 DFLZxxQ.pdf
DFLZ5V1Q-7
Hersteller: Diodes Incorporated
Description: DIODE ZENER 5.1V 1W POWERDI 123
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: POWERDI®123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Supplier Device Package: PowerDI™ 123
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 200
Voltage Coupled to Current - Reverse Leakage @ Vr: 1
Current - Reverse Leakage @ Vr: 2.5 µA @ 1 V
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 2 Ohms
Power - Max: 1 W
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 72193 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
17+1.3 EUR
26+0.81 EUR
100+0.51 EUR
500+0.39 EUR
1000+0.36 EUR
Mindestbestellmenge: 17 Stücke
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DFLS240Q-7 DFLS240Q.pdf
DFLS240Q-7
Hersteller: Diodes Incorporated
Description: DIODE SCHOTTK 40V 2A POWERDI 123
Packaging: Tape & Reel (TR)
Package / Case: POWERDI®123
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 28pF @ 10V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: PowerDI™ 123
Operating Temperature - Junction: -65°C ~ 125°C
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 2 A
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 2
Voltage Coupled to Current - Reverse Leakage @ Vr: 40
Current - Reverse Leakage @ Vr: 20 µA @ 40 V
Voltage - DC Reverse (Vr) (Max): 40 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 36000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.45 EUR
6000+0.42 EUR
9000+0.39 EUR
15000+0.38 EUR
21000+0.37 EUR
30000+0.36 EUR
Mindestbestellmenge: 3000 Stücke
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DFLS240Q-7 DFLS240Q.pdf
DFLS240Q-7
Hersteller: Diodes Incorporated
Description: DIODE SCHOTTK 40V 2A POWERDI 123
Packaging: Cut Tape (CT)
Package / Case: POWERDI®123
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 28pF @ 10V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: PowerDI™ 123
Operating Temperature - Junction: -65°C ~ 125°C
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 2 A
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 2
Voltage Coupled to Current - Reverse Leakage @ Vr: 40
Current - Reverse Leakage @ Vr: 20 µA @ 40 V
Voltage - DC Reverse (Vr) (Max): 40 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 37930 Stücke:
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AnzahlPrivatkunde
12+1.87 EUR
19+1.15 EUR
100+0.75 EUR
500+0.58 EUR
1000+0.52 EUR
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DMT34M1LPS-13 DMT34M1LPS.pdf
DMT34M1LPS-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 100A PWRDI5060-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 20A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2242 pF @ 15 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 15
Produkt ist nicht verfügbar
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DMT34M1LPS-13 DMT34M1LPS.pdf
DMT34M1LPS-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 100A PWRDI5060-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 20A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2242 pF @ 15 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 15
auf Bestellung 1495 Stücke:
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AnzahlPrivatkunde
12+1.84 EUR
19+1.17 EUR
100+0.76 EUR
500+0.58 EUR
1000+0.54 EUR
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MBR10200CT-G1 MBR10200C.pdf
MBR10200CT-G1
Hersteller: Diodes Incorporated
Description: DIODE ARR SCHOTT 200V 5A TO2203
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 5 A
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 5
Voltage Coupled to Current - Reverse Leakage @ Vr: 200
Current - Reverse Leakage @ Vr: 150 µA @ 200 V
auf Bestellung 400 Stücke:
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11+1.93 EUR
50+0.89 EUR
100+0.79 EUR
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BZX84C5V1Q-13-F ds18001.pdf
BZX84C5V1Q-13-F
Hersteller: Diodes Incorporated
Description: DIODE ZENER 5.1V 300MW SOT23
Tolerance: ±5.88%
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: SOT-23-3
Grade: Automotive
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 2 µA @ 2 V
Qualification: AEC-Q101
auf Bestellung 1145 Stücke:
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AnzahlPrivatkunde
42+0.5 EUR
67+0.32 EUR
81+0.26 EUR
93+0.23 EUR
107+0.2 EUR
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PI6CG330440AZUDIEX-13R PI6CG330440A.pdf
PI6CG330440AZUDIEX-13R
Hersteller: Diodes Incorporated
Description: CLOCK GENERATOR U-QFN8080-100 T&
Packaging: Tape & Reel (TR)
Package / Case: 100-UFQFN Dual Rows, Exposed Pad
Mounting Type: Surface Mount
Output: HCSL
Frequency - Max: 100MHz
Type: Clock Generator
Input: HCSL, Crystal
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3.135V ~ 3.465V
Ratio - Input:Output: 2:19
Differential - Input:Output: Yes/Yes
Supplier Device Package: 100-UQFN (8x8)
PLL: Yes
Divider/Multiplier: No/No
Number of Circuits: 1
Produkt ist nicht verfügbar
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