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SD1A220A SD1A220A Diodes Incorporated SD1A220A.PDF Description: THYRISTOR SMA T&R 5K
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 60 mA
Voltage - Breakover: 210 ~ 230V
Current - Breakover: 200 µA
Supplier Device Package: SMA
Current - Peak Output: 1 A
Produkt ist nicht verfügbar
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SD1A220A SD1A220A Diodes Incorporated SD1A220A.PDF Description: THYRISTOR SMA T&R 5K
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 60 mA
Voltage - Breakover: 210 ~ 230V
Current - Breakover: 200 µA
Supplier Device Package: SMA
Current - Peak Output: 1 A
Produkt ist nicht verfügbar
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BC807-40-13-F BC807-40-13-F Diodes Incorporated BC807-16FSW_BC807-40FSW.pdf Description: GENERAL PURPOSE TRANSISTOR SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 310 mW
Produkt ist nicht verfügbar
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BAS40TWQ-7-F Diodes Incorporated Description: DIODE ARR SCHOT 40V 200MA SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 3 Independent
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: SOT-363
Operating Temperature - Junction: -55°C ~ 125°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Current - Reverse Leakage @ Vr: 200 nA @ 30 V
Qualification: AEC-Q101
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BAS40TW-7-F-2477 Diodes Incorporated Description: DIODE ARR SCHOT 40V 200MA SOT363
Packaging: Bulk
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 3 Independent
Current - Average Rectified (Io) (per Diode): 200mA
Supplier Device Package: SOT-363
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Current - Reverse Leakage @ Vr: 200 nA @ 30 V
Produkt ist nicht verfügbar
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B190Q-13-F B190Q-13-F Diodes Incorporated B170Q-B1100Q.pdf Description: DIODE SCHOTTKY 90V 1A SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SMA
Operating Temperature - Junction: -65°C ~ 155°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 90 V
Qualification: AEC-Q101
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B190Q-13-F B190Q-13-F Diodes Incorporated B170Q-B1100Q.pdf Description: DIODE SCHOTTKY 90V 1A SMA
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SMA
Operating Temperature - Junction: -65°C ~ 155°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 90 V
Qualification: AEC-Q101
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B190AE-13 B190AE-13 Diodes Incorporated B170AE%2CBE-B1100AE%2CBE.pdf Description: DIODE SCHOTTKY 90V 1A SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 27pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 1 A
Current - Reverse Leakage @ Vr: 200 µA @ 90 V
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B190BE-13 B190BE-13 Diodes Incorporated B170AE%2CBE-B1100AE%2CBE.pdf Description: DIODE SCHOTTKY 90V 1A SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 27pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SMB
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 1 A
Current - Reverse Leakage @ Vr: 200 µA @ 90 V
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GB1920007 GB1920007 Diodes Incorporated GB_GG.pdf Description: CRYSTAL 19.2000MHZ 20PF
Packaging: Tape & Reel (TR)
Load Capacitance: 20pF
Type: MHz Crystal
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±30ppm
Frequency Tolerance: ±30ppm
Operating Mode: Fundamental
ESR (Equivalent Series Resistance): 30 Ohms
Frequency: 19.2 MHz
Produkt ist nicht verfügbar
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BZX84B27-7-F BZX84B27-7-F Diodes Incorporated BZX84Bxxx.pdf Description: DIODE ZENER 27V 300MW SOT23
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: SOT-23-3
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 18.9 V
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BZX84B27-7-F BZX84B27-7-F Diodes Incorporated BZX84Bxxx.pdf Description: DIODE ZENER 27V 300MW SOT23
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: SOT-23-3
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 18.9 V
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BZX84B27Q-7-F BZX84B27Q-7-F Diodes Incorporated BZX84Bxxx.pdf Description: DIODE ZENER 27V 300MW SOT23
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: SOT-23-3
Grade: Automotive
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 18.9 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BAV99-7-F-W Diodes Incorporated BAV99.pdf Description: FAST SWITCHING DIODE SOT23 T&R 3
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BC846B-7-F-W BC846B-7-F-W Diodes Incorporated BC848A.pdf Description: TRANS NPN 65V 0.1A SOT-23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 300 mW
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3000+0.055 EUR
6000+0.049 EUR
9000+0.046 EUR
15000+0.043 EUR
21000+0.04 EUR
30000+0.038 EUR
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BC846B-7-F-W BC846B-7-F-W Diodes Incorporated BC848A.pdf Description: TRANS NPN 65V 0.1A SOT-23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 300 mW
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67+0.26 EUR
104+0.17 EUR
169+0.1 EUR
500+0.076 EUR
1000+0.067 EUR
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DPC816S-C-TR DPC816S-C-TR Diodes Incorporated DPC816+Series.pdf Description: OPTOISOLATOR 5KV 1CH TRANS 4-SMD
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 200% @ 5mA
Vce Saturation (Max): 200mV
Current Transfer Ratio (Max): 400% @ 5mA
Supplier Device Package: 4-SMD
Voltage - Output (Max): 80V
Rise / Fall Time (Typ): 18µs, 18µs (Max)
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
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139+0.13 EUR
160+0.11 EUR
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250+0.085 EUR
500+0.08 EUR
1000+0.076 EUR
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BC817-25FSWQ-7 Diodes Incorporated BC817-16FSWQ-BC817-40FSWQ.pdf Description: IC
Packaging: Tape & Reel (TR)
Package / Case: 3-UDFN
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: U-DFN1412-3/SWP (Type A)
Grade: Automotive
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 500 mW
Qualification: AEC-Q101
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BC817-25FHW-7 Diodes Incorporated BC817-16FHW-BC817-40FHW.pdf Description: GENERAL PURPOSE TRANSISTOR U-DFN
Packaging: Tape & Reel (TR)
Package / Case: 3-PowerUDFN
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: U-DFN1110-3 (SWP) (Type A)
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 460 mW
Produkt ist nicht verfügbar
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MMSZ5231B-13-F MMSZ5231B-13-F Diodes Incorporated ds18010.pdf Description: DIODE ZENER 5.1V 370MW SOD123
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 17 Ohms
Supplier Device Package: SOD-123
Power - Max: 370 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 2 V
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MMSZ5231B-13-F MMSZ5231B-13-F Diodes Incorporated ds18010.pdf Description: DIODE ZENER 5.1V 370MW SOD123
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 17 Ohms
Supplier Device Package: SOD-123
Power - Max: 370 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 2 V
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151+0.12 EUR
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1000+0.075 EUR
2000+0.066 EUR
5000+0.057 EUR
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PD3Z284C3V6-7 PD3Z284C3V6-7 Diodes Incorporated PD3Z284C2V4_PD3Z284C39.pdf Description: DIODE ZENER 3.6V 500MW PWRDI323
Packaging: Tape & Reel (TR)
Tolerance: ±6%
Package / Case: PowerDI™ 323
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 3.6 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: PowerDI™ 323
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
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PD3Z284C3V6-7 PD3Z284C3V6-7 Diodes Incorporated PD3Z284C2V4_PD3Z284C39.pdf Description: DIODE ZENER 3.6V 500MW PWRDI323
Packaging: Cut Tape (CT)
Tolerance: ±6%
Package / Case: PowerDI™ 323
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 3.6 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: PowerDI™ 323
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
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BC817-40FHW-7 Diodes Incorporated BC807-16FSW_BC807-40FSW.pdf Description: GENERAL PURPOSE TRANSISTOR U-DFN
Packaging: Tape & Reel (TR)
Package / Case: 3-PowerUDFN
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: U-DFN1110-3 (SWP) (Type A)
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 460 mW
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GPR340W6-7 Diodes Incorporated Description: ACDC SYNCH RECT CONT SOT26 T&R 3
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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GBPC2508W Diodes Incorporated GBPC25005-2510_W.pdf Description: BRIDGE RECT 1P 800V 25A GBPC-W
Packaging: Tray
Package / Case: 4-Square, GBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-W
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Produkt ist nicht verfügbar
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MBRB20200CT MBRB20200CT Diodes Incorporated MBRB20200CT.pdf Description: DIODE ARR SCHOTT 200V 10A TO-263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-263
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 890 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
Qualification: AEC-Q101
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BC846A-7-F-W BC846A-7-F-W Diodes Incorporated BC846A.pdf Description: TRANS NPN 65V 0.1A SOT-23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 300 mW
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3000+0.06 EUR
6000+0.053 EUR
9000+0.05 EUR
15000+0.046 EUR
21000+0.044 EUR
30000+0.042 EUR
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BC846A-7-F-W BC846A-7-F-W Diodes Incorporated BC846A.pdf Description: TRANS NPN 65V 0.1A SOT-23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 300 mW
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59+0.3 EUR
96+0.18 EUR
156+0.11 EUR
500+0.083 EUR
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UX7BF62007 Diodes Incorporated UX7BF62007.pdf Description: CRYSTAL OSCILLATOR SEAM7050 T&R
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, No Lead
Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm)
Mounting Type: Surface Mount
Output: LVPECL
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -20°C ~ 70°C
Frequency Stability: ±20ppm
Voltage - Supply: 3.3V
Current - Supply (Max): 60mA
Height - Seated (Max): 0.061" (1.55mm)
Frequency: 156.25 MHz
Base Resonator: Crystal
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PI4ULS3V204LEX PI4ULS3V204LEX Diodes Incorporated PI4ULS3V204.pdf Description: IC XLTR VL BIDIR 14-TSSOP
Packaging: Tape & Reel (TR)
Features: Auto-Direction Sensing
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Output Type: Open Drain, Push-Pull
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Data Rate: 2Mbps, 24Mbps
Supplier Device Package: 14-TSSOP
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 1
Voltage - VCCA: 1.1 V ~ 3.6 V
Voltage - VCCB: 1.1 V ~ 3.6 V
Number of Circuits: 4
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PI4ULS3V204LEX PI4ULS3V204LEX Diodes Incorporated PI4ULS3V204.pdf Description: IC XLTR VL BIDIR 14-TSSOP
Packaging: Cut Tape (CT)
Features: Auto-Direction Sensing
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Output Type: Open Drain, Push-Pull
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Data Rate: 2Mbps, 24Mbps
Supplier Device Package: 14-TSSOP
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 1
Voltage - VCCA: 1.1 V ~ 3.6 V
Voltage - VCCB: 1.1 V ~ 3.6 V
Number of Circuits: 4
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GBJ2510 GBJ2510 Diodes Incorporated PdfFile_544733.pdf Description: BRIDGE RECT 1PHASE 1KV 25A GBJ
Packaging: Tube
Package / Case: 4-SIP, GBJ
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBJ
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 12.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
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BZT52C6V8LPQ-7 BZT52C6V8LPQ-7 Diodes Incorporated BZT52C6V8LPQ-BZT52C16LPQ.pdf Description: DIODE ZENER 6.8V 250MW 2DFN
Packaging: Bulk
Tolerance: ±5.88%
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: X1-DFN1006-2
Grade: Automotive
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 2 µA @ 4 V
Qualification: AEC-Q101
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DMT6016LFDF-7-W DMT6016LFDF-7-W Diodes Incorporated DMT6016LFDF.pdf Description: MOSFET N-CH 60V 8.9A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.9A (Ta)
Rds On (Max) @ Id, Vgs: 16mOhm @ 10A, 10V
Power Dissipation (Max): 820mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 864 pF @ 30 V
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DMT6016LFDF-7-W DMT6016LFDF-7-W Diodes Incorporated DMT6016LFDF.pdf Description: MOSFET N-CH 60V 8.9A 6UDFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.9A (Ta)
Rds On (Max) @ Id, Vgs: 16mOhm @ 10A, 10V
Power Dissipation (Max): 820mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 864 pF @ 30 V
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S2KDFQ-13 S2KDFQ-13 Diodes Incorporated S2KDFQ.pdf Description: DIODE STANDARD 800V 2A DFLAT
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: D-Flat
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Qualification: AEC-Q101
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S2KDFQ-13 S2KDFQ-13 Diodes Incorporated S2KDFQ.pdf Description: DIODE STANDARD 800V 2A DFLAT
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: D-Flat
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Qualification: AEC-Q101
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PI3EQX32904Q3ZREX PI3EQX32904Q3ZREX Diodes Incorporated PI3EQX32904Q.pdf Description: PCIE EQX W-QFN3063-46 T&R 3.5K
Packaging: Tape & Reel (TR)
Package / Case: 46-WFQFN Exposed Pad
Number of Channels: 4
Mounting Type: Surface Mount
Output: CML
Type: Buffer, ReDriver
Input: CML
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 3.6V
Applications: PCIe
Current - Supply: 300mA
Data Rate (Max): 32Gbps
Supplier Device Package: 46-WQFN (3x6.3)
Signal Conditioning: Input Equalization
Grade: Automotive
Qualification: AEC-Q100
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PI3EQX32904Q3ZREX PI3EQX32904Q3ZREX Diodes Incorporated PI3EQX32904Q.pdf Description: PCIE EQX W-QFN3063-46 T&R 3.5K
Packaging: Cut Tape (CT)
Package / Case: 46-WFQFN Exposed Pad
Number of Channels: 4
Mounting Type: Surface Mount
Output: CML
Type: Buffer, ReDriver
Input: CML
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 3.6V
Applications: PCIe
Current - Supply: 300mA
Data Rate (Max): 32Gbps
Supplier Device Package: 46-WQFN (3x6.3)
Signal Conditioning: Input Equalization
Grade: Automotive
Qualification: AEC-Q100
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74AHC32T14-13 74AHC32T14-13 Diodes Incorporated 74AHC32.pdf Description: IC GATE OR 4CH 2-INP 14TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: OR Gate
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 1.5V ~ 3.85V
Input Logic Level - Low: 0.5V ~ 1.65V
Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 20 µA
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74AHC32T14-13 74AHC32T14-13 Diodes Incorporated 74AHC32.pdf Description: IC GATE OR 4CH 2-INP 14TSSOP
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: OR Gate
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 1.5V ~ 3.85V
Input Logic Level - Low: 0.5V ~ 1.65V
Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 20 µA
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74AHC32S14-13 74AHC32S14-13 Diodes Incorporated 74AHC32.pdf Description: IC GATE OR 4CH 2-INP 14SO
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: OR Gate
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 14-SO
Input Logic Level - High: 1.5V ~ 3.85V
Input Logic Level - Low: 0.5V ~ 1.65V
Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 20 µA
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74AHC32S14-13 74AHC32S14-13 Diodes Incorporated 74AHC32.pdf Description: IC GATE OR 4CH 2-INP 14SO
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: OR Gate
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 14-SO
Input Logic Level - High: 1.5V ~ 3.85V
Input Logic Level - Low: 0.5V ~ 1.65V
Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 20 µA
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GBPC1510W Diodes Incorporated ds21208.pdf Description: BRIDGE RECT 1P 1KV 15A GBPC-W
Packaging: Tray
Package / Case: 4-Square, GBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-W
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 7.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
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B260S1FX-7 B260S1FX-7 Diodes Incorporated B260S1FX.pdf Description: DIODE SCHOTTKY 60V 2A SOD123F
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-123F
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 2 A
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
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DMP3028LSDQ-13 DMP3028LSDQ-13 Diodes Incorporated DMP3028LSDQ.pdf Description: IC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.3W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 1241pF @ 15V
Rds On (Max) @ Id, Vgs: 28mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Grade: Automotive
Qualification: AEC-Q101
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1.5KE68A-B 1.5KE68A-B Diodes Incorporated ds21503.pdf Description: TVS DIODE 58.1VWM 92VC DO201
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 16.3A
Voltage - Reverse Standoff (Typ): 58.1V
Supplier Device Package: DO-201
Unidirectional Channels: 1
Voltage - Breakdown (Min): 64.6V
Voltage - Clamping (Max) @ Ipp: 92V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
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1.5KE68CA-B 1.5KE68CA-B Diodes Incorporated ds21503.pdf Description: TVS DIODE 58.1VWM 92VC DO201
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 16.3A
Voltage - Reverse Standoff (Typ): 58.1V
Supplier Device Package: DO-201
Bidirectional Channels: 1
Voltage - Breakdown (Min): 64.6V
Voltage - Clamping (Max) @ Ipp: 92V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
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DMTH4008LPDW-13 DMTH4008LPDW-13 Diodes Incorporated DMTH4008LPDW.pdf Description: MOSFET 2N-CH 40V 10A PWRDI50
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.67W (Ta), 39.4W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 46.2A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 881pF @ 20V
Rds On (Max) @ Id, Vgs: 12.3mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12.3nC @ 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type UXD)
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DMTH4008LPDW-13 DMTH4008LPDW-13 Diodes Incorporated DMTH4008LPDW.pdf Description: MOSFET 2N-CH 40V 10A PWRDI50
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.67W (Ta), 39.4W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 46.2A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 881pF @ 20V
Rds On (Max) @ Id, Vgs: 12.3mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12.3nC @ 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type UXD)
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DMTH45M5SPDW-13 DMTH45M5SPDW-13 Diodes Incorporated DMTH45M5SPDW.pdf Description: MOSFET 2N-CH 40V 79A PWRDI50
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.3W (Ta), 60W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 79A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1083pF @ 20V
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 25A, 10V
Gate Charge (Qg) (Max) @ Vgs: 13.2nC @ 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type UXD)
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DMTH45M5SPDW-13 DMTH45M5SPDW-13 Diodes Incorporated DMTH45M5SPDW.pdf Description: MOSFET 2N-CH 40V 79A PWRDI50
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.3W (Ta), 60W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 79A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1083pF @ 20V
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 25A, 10V
Gate Charge (Qg) (Max) @ Vgs: 13.2nC @ 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type UXD)
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BC807-40FSW-7 Diodes Incorporated BC807-16FSW_BC807-40FSW.pdf Description: GENERAL PURPOSE TRANSISTOR U-DFN
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BC807-40FSWQ-7 Diodes Incorporated BC807-16FSW_BC807-40FSW.pdf Description: GENERAL PURPOSE TRANSISTOR U-DFN
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GBPC3510W Diodes Incorporated GBPC35005_3510_W.pdf Description: BRIDGE RECT 1P 1KV 35A GBPC-W
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BC807-16FSW-7 Diodes Incorporated BC807-16FSW_BC807-40FSW.pdf Description: GENERAL PURPOSE TRANSISTOR U-DFN
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BC807-16FHW-7 Diodes Incorporated BC807-16FHW-BC807-40FHW.pdf Description: GENERAL PURPOSE TRANSISTOR U-DFN
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BC807-16FSWQ-7 Diodes Incorporated BC807-16FSW_BC807-40FSW.pdf Description: GENERAL PURPOSE TRANSISTOR U-DFN
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FL2500073 FL2500073 Diodes Incorporated FL.pdf Description: CRYSTAL 25.0000MHZ 10PF SMD
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SD1A220A SD1A220A.PDF
SD1A220A
Hersteller: Diodes Incorporated
Description: THYRISTOR SMA T&R 5K
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 60 mA
Voltage - Breakover: 210 ~ 230V
Current - Breakover: 200 µA
Supplier Device Package: SMA
Current - Peak Output: 1 A
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SD1A220A SD1A220A.PDF
SD1A220A
Hersteller: Diodes Incorporated
Description: THYRISTOR SMA T&R 5K
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 60 mA
Voltage - Breakover: 210 ~ 230V
Current - Breakover: 200 µA
Supplier Device Package: SMA
Current - Peak Output: 1 A
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BC807-40-13-F BC807-16FSW_BC807-40FSW.pdf
BC807-40-13-F
Hersteller: Diodes Incorporated
Description: GENERAL PURPOSE TRANSISTOR SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 310 mW
Produkt ist nicht verfügbar
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BAS40TWQ-7-F
Hersteller: Diodes Incorporated
Description: DIODE ARR SCHOT 40V 200MA SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 3 Independent
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: SOT-363
Operating Temperature - Junction: -55°C ~ 125°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Current - Reverse Leakage @ Vr: 200 nA @ 30 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BAS40TW-7-F-2477
Hersteller: Diodes Incorporated
Description: DIODE ARR SCHOT 40V 200MA SOT363
Packaging: Bulk
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 3 Independent
Current - Average Rectified (Io) (per Diode): 200mA
Supplier Device Package: SOT-363
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Current - Reverse Leakage @ Vr: 200 nA @ 30 V
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B190Q-13-F B170Q-B1100Q.pdf
B190Q-13-F
Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 90V 1A SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SMA
Operating Temperature - Junction: -65°C ~ 155°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 90 V
Qualification: AEC-Q101
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5000+0.22 EUR
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B190Q-13-F B170Q-B1100Q.pdf
B190Q-13-F
Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 90V 1A SMA
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SMA
Operating Temperature - Junction: -65°C ~ 155°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 90 V
Qualification: AEC-Q101
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18+1.02 EUR
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B190AE-13 B170AE%2CBE-B1100AE%2CBE.pdf
B190AE-13
Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 90V 1A SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 27pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 1 A
Current - Reverse Leakage @ Vr: 200 µA @ 90 V
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B190BE-13 B170AE%2CBE-B1100AE%2CBE.pdf
B190BE-13
Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 90V 1A SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 27pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SMB
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 1 A
Current - Reverse Leakage @ Vr: 200 µA @ 90 V
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GB1920007 GB_GG.pdf
GB1920007
Hersteller: Diodes Incorporated
Description: CRYSTAL 19.2000MHZ 20PF
Packaging: Tape & Reel (TR)
Load Capacitance: 20pF
Type: MHz Crystal
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±30ppm
Frequency Tolerance: ±30ppm
Operating Mode: Fundamental
ESR (Equivalent Series Resistance): 30 Ohms
Frequency: 19.2 MHz
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BZX84B27-7-F BZX84Bxxx.pdf
BZX84B27-7-F
Hersteller: Diodes Incorporated
Description: DIODE ZENER 27V 300MW SOT23
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: SOT-23-3
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 18.9 V
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BZX84B27-7-F BZX84Bxxx.pdf
BZX84B27-7-F
Hersteller: Diodes Incorporated
Description: DIODE ZENER 27V 300MW SOT23
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: SOT-23-3
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 18.9 V
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46+0.39 EUR
75+0.24 EUR
121+0.15 EUR
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BZX84B27Q-7-F BZX84Bxxx.pdf
BZX84B27Q-7-F
Hersteller: Diodes Incorporated
Description: DIODE ZENER 27V 300MW SOT23
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: SOT-23-3
Grade: Automotive
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 18.9 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BAV99-7-F-W BAV99.pdf
Hersteller: Diodes Incorporated
Description: FAST SWITCHING DIODE SOT23 T&R 3
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BC846B-7-F-W BC848A.pdf
BC846B-7-F-W
Hersteller: Diodes Incorporated
Description: TRANS NPN 65V 0.1A SOT-23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 300 mW
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3000+0.055 EUR
6000+0.049 EUR
9000+0.046 EUR
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BC846B-7-F-W BC848A.pdf
BC846B-7-F-W
Hersteller: Diodes Incorporated
Description: TRANS NPN 65V 0.1A SOT-23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 300 mW
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67+0.26 EUR
104+0.17 EUR
169+0.1 EUR
500+0.076 EUR
1000+0.067 EUR
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DPC816S-C-TR DPC816+Series.pdf
DPC816S-C-TR
Hersteller: Diodes Incorporated
Description: OPTOISOLATOR 5KV 1CH TRANS 4-SMD
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 200% @ 5mA
Vce Saturation (Max): 200mV
Current Transfer Ratio (Max): 400% @ 5mA
Supplier Device Package: 4-SMD
Voltage - Output (Max): 80V
Rise / Fall Time (Typ): 18µs, 18µs (Max)
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
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91+0.19 EUR
139+0.13 EUR
160+0.11 EUR
188+0.094 EUR
250+0.085 EUR
500+0.08 EUR
1000+0.076 EUR
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BC817-25FSWQ-7 BC817-16FSWQ-BC817-40FSWQ.pdf
Hersteller: Diodes Incorporated
Description: IC
Packaging: Tape & Reel (TR)
Package / Case: 3-UDFN
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: U-DFN1412-3/SWP (Type A)
Grade: Automotive
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 500 mW
Qualification: AEC-Q101
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5000+0.062 EUR
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BC817-25FHW-7 BC817-16FHW-BC817-40FHW.pdf
Hersteller: Diodes Incorporated
Description: GENERAL PURPOSE TRANSISTOR U-DFN
Packaging: Tape & Reel (TR)
Package / Case: 3-PowerUDFN
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: U-DFN1110-3 (SWP) (Type A)
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 460 mW
Produkt ist nicht verfügbar
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MMSZ5231B-13-F ds18010.pdf
MMSZ5231B-13-F
Hersteller: Diodes Incorporated
Description: DIODE ZENER 5.1V 370MW SOD123
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 17 Ohms
Supplier Device Package: SOD-123
Power - Max: 370 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 2 V
Produkt ist nicht verfügbar
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MMSZ5231B-13-F ds18010.pdf
MMSZ5231B-13-F
Hersteller: Diodes Incorporated
Description: DIODE ZENER 5.1V 370MW SOD123
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 17 Ohms
Supplier Device Package: SOD-123
Power - Max: 370 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 2 V
auf Bestellung 9386 Stücke:
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56+0.32 EUR
94+0.19 EUR
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2000+0.066 EUR
5000+0.057 EUR
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PD3Z284C3V6-7 PD3Z284C2V4_PD3Z284C39.pdf
PD3Z284C3V6-7
Hersteller: Diodes Incorporated
Description: DIODE ZENER 3.6V 500MW PWRDI323
Packaging: Tape & Reel (TR)
Tolerance: ±6%
Package / Case: PowerDI™ 323
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 3.6 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: PowerDI™ 323
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
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3000+0.26 EUR
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PD3Z284C3V6-7 PD3Z284C2V4_PD3Z284C39.pdf
PD3Z284C3V6-7
Hersteller: Diodes Incorporated
Description: DIODE ZENER 3.6V 500MW PWRDI323
Packaging: Cut Tape (CT)
Tolerance: ±6%
Package / Case: PowerDI™ 323
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 3.6 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: PowerDI™ 323
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
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AnzahlPreis
16+1.11 EUR
26+0.68 EUR
100+0.44 EUR
500+0.33 EUR
1000+0.3 EUR
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BC817-40FHW-7 BC807-16FSW_BC807-40FSW.pdf
Hersteller: Diodes Incorporated
Description: GENERAL PURPOSE TRANSISTOR U-DFN
Packaging: Tape & Reel (TR)
Package / Case: 3-PowerUDFN
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: U-DFN1110-3 (SWP) (Type A)
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 460 mW
Produkt ist nicht verfügbar
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GPR340W6-7
Hersteller: Diodes Incorporated
Description: ACDC SYNCH RECT CONT SOT26 T&R 3
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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GBPC2508W GBPC25005-2510_W.pdf
Hersteller: Diodes Incorporated
Description: BRIDGE RECT 1P 800V 25A GBPC-W
Packaging: Tray
Package / Case: 4-Square, GBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-W
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Produkt ist nicht verfügbar
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MBRB20200CT MBRB20200CT.pdf
MBRB20200CT
Hersteller: Diodes Incorporated
Description: DIODE ARR SCHOTT 200V 10A TO-263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-263
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 890 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
Qualification: AEC-Q101
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BC846A-7-F-W BC846A.pdf
BC846A-7-F-W
Hersteller: Diodes Incorporated
Description: TRANS NPN 65V 0.1A SOT-23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 300 mW
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3000+0.06 EUR
6000+0.053 EUR
9000+0.05 EUR
15000+0.046 EUR
21000+0.044 EUR
30000+0.042 EUR
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BC846A-7-F-W BC846A.pdf
BC846A-7-F-W
Hersteller: Diodes Incorporated
Description: TRANS NPN 65V 0.1A SOT-23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 300 mW
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59+0.3 EUR
96+0.18 EUR
156+0.11 EUR
500+0.083 EUR
1000+0.073 EUR
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UX7BF62007 UX7BF62007.pdf
Hersteller: Diodes Incorporated
Description: CRYSTAL OSCILLATOR SEAM7050 T&R
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, No Lead
Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm)
Mounting Type: Surface Mount
Output: LVPECL
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -20°C ~ 70°C
Frequency Stability: ±20ppm
Voltage - Supply: 3.3V
Current - Supply (Max): 60mA
Height - Seated (Max): 0.061" (1.55mm)
Frequency: 156.25 MHz
Base Resonator: Crystal
Produkt ist nicht verfügbar
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PI4ULS3V204LEX PI4ULS3V204.pdf
PI4ULS3V204LEX
Hersteller: Diodes Incorporated
Description: IC XLTR VL BIDIR 14-TSSOP
Packaging: Tape & Reel (TR)
Features: Auto-Direction Sensing
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Output Type: Open Drain, Push-Pull
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Data Rate: 2Mbps, 24Mbps
Supplier Device Package: 14-TSSOP
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 1
Voltage - VCCA: 1.1 V ~ 3.6 V
Voltage - VCCB: 1.1 V ~ 3.6 V
Number of Circuits: 4
Produkt ist nicht verfügbar
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PI4ULS3V204LEX PI4ULS3V204.pdf
PI4ULS3V204LEX
Hersteller: Diodes Incorporated
Description: IC XLTR VL BIDIR 14-TSSOP
Packaging: Cut Tape (CT)
Features: Auto-Direction Sensing
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Output Type: Open Drain, Push-Pull
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Data Rate: 2Mbps, 24Mbps
Supplier Device Package: 14-TSSOP
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 1
Voltage - VCCA: 1.1 V ~ 3.6 V
Voltage - VCCB: 1.1 V ~ 3.6 V
Number of Circuits: 4
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13+1.36 EUR
19+0.97 EUR
25+0.88 EUR
100+0.77 EUR
250+0.72 EUR
500+0.69 EUR
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GBJ2510 PdfFile_544733.pdf
GBJ2510
Hersteller: Diodes Incorporated
Description: BRIDGE RECT 1PHASE 1KV 25A GBJ
Packaging: Tube
Package / Case: 4-SIP, GBJ
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBJ
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 12.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Produkt ist nicht verfügbar
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BZT52C6V8LPQ-7 BZT52C6V8LPQ-BZT52C16LPQ.pdf
BZT52C6V8LPQ-7
Hersteller: Diodes Incorporated
Description: DIODE ZENER 6.8V 250MW 2DFN
Packaging: Bulk
Tolerance: ±5.88%
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: X1-DFN1006-2
Grade: Automotive
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 2 µA @ 4 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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DMT6016LFDF-7-W DMT6016LFDF.pdf
DMT6016LFDF-7-W
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 8.9A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.9A (Ta)
Rds On (Max) @ Id, Vgs: 16mOhm @ 10A, 10V
Power Dissipation (Max): 820mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 864 pF @ 30 V
Produkt ist nicht verfügbar
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DMT6016LFDF-7-W DMT6016LFDF.pdf
DMT6016LFDF-7-W
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 8.9A 6UDFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.9A (Ta)
Rds On (Max) @ Id, Vgs: 16mOhm @ 10A, 10V
Power Dissipation (Max): 820mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 864 pF @ 30 V
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13+1.43 EUR
20+0.89 EUR
100+0.58 EUR
500+0.45 EUR
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S2KDFQ-13 S2KDFQ.pdf
S2KDFQ-13
Hersteller: Diodes Incorporated
Description: DIODE STANDARD 800V 2A DFLAT
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: D-Flat
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Qualification: AEC-Q101
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10000+0.16 EUR
20000+0.14 EUR
50000+0.13 EUR
100000+0.12 EUR
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S2KDFQ-13 S2KDFQ.pdf
S2KDFQ-13
Hersteller: Diodes Incorporated
Description: DIODE STANDARD 800V 2A DFLAT
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: D-Flat
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Qualification: AEC-Q101
auf Bestellung 1342727 Stücke:
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22+0.83 EUR
35+0.51 EUR
100+0.32 EUR
500+0.24 EUR
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2000+0.2 EUR
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PI3EQX32904Q3ZREX PI3EQX32904Q.pdf
PI3EQX32904Q3ZREX
Hersteller: Diodes Incorporated
Description: PCIE EQX W-QFN3063-46 T&R 3.5K
Packaging: Tape & Reel (TR)
Package / Case: 46-WFQFN Exposed Pad
Number of Channels: 4
Mounting Type: Surface Mount
Output: CML
Type: Buffer, ReDriver
Input: CML
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 3.6V
Applications: PCIe
Current - Supply: 300mA
Data Rate (Max): 32Gbps
Supplier Device Package: 46-WQFN (3x6.3)
Signal Conditioning: Input Equalization
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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PI3EQX32904Q3ZREX PI3EQX32904Q.pdf
PI3EQX32904Q3ZREX
Hersteller: Diodes Incorporated
Description: PCIE EQX W-QFN3063-46 T&R 3.5K
Packaging: Cut Tape (CT)
Package / Case: 46-WFQFN Exposed Pad
Number of Channels: 4
Mounting Type: Surface Mount
Output: CML
Type: Buffer, ReDriver
Input: CML
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 3.6V
Applications: PCIe
Current - Supply: 300mA
Data Rate (Max): 32Gbps
Supplier Device Package: 46-WQFN (3x6.3)
Signal Conditioning: Input Equalization
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 3400 Stücke:
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2+14.92 EUR
10+11.64 EUR
25+10.82 EUR
100+9.92 EUR
250+9.49 EUR
500+9.23 EUR
1000+9.02 EUR
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74AHC32T14-13 74AHC32.pdf
74AHC32T14-13
Hersteller: Diodes Incorporated
Description: IC GATE OR 4CH 2-INP 14TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: OR Gate
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 1.5V ~ 3.85V
Input Logic Level - Low: 0.5V ~ 1.65V
Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 20 µA
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2500+0.13 EUR
12500+0.12 EUR
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74AHC32T14-13 74AHC32.pdf
74AHC32T14-13
Hersteller: Diodes Incorporated
Description: IC GATE OR 4CH 2-INP 14TSSOP
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: OR Gate
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 1.5V ~ 3.85V
Input Logic Level - Low: 0.5V ~ 1.65V
Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 20 µA
auf Bestellung 17431 Stücke:
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53+0.33 EUR
79+0.22 EUR
90+0.2 EUR
105+0.17 EUR
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74AHC32S14-13 74AHC32.pdf
74AHC32S14-13
Hersteller: Diodes Incorporated
Description: IC GATE OR 4CH 2-INP 14SO
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: OR Gate
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 14-SO
Input Logic Level - High: 1.5V ~ 3.85V
Input Logic Level - Low: 0.5V ~ 1.65V
Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 20 µA
Produkt ist nicht verfügbar
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74AHC32S14-13 74AHC32.pdf
74AHC32S14-13
Hersteller: Diodes Incorporated
Description: IC GATE OR 4CH 2-INP 14SO
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: OR Gate
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 14-SO
Input Logic Level - High: 1.5V ~ 3.85V
Input Logic Level - Low: 0.5V ~ 1.65V
Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 20 µA
auf Bestellung 2467 Stücke:
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44+0.4 EUR
65+0.27 EUR
73+0.24 EUR
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GBPC1510W ds21208.pdf
Hersteller: Diodes Incorporated
Description: BRIDGE RECT 1P 1KV 15A GBPC-W
Packaging: Tray
Package / Case: 4-Square, GBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-W
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 7.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar
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B260S1FX-7 B260S1FX.pdf
B260S1FX-7
Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 60V 2A SOD123F
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-123F
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 2 A
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
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3000+0.085 EUR
6000+0.076 EUR
9000+0.075 EUR
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DMP3028LSDQ-13 DMP3028LSDQ.pdf
DMP3028LSDQ-13
Hersteller: Diodes Incorporated
Description: IC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.3W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 1241pF @ 15V
Rds On (Max) @ Id, Vgs: 28mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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1.5KE68A-B ds21503.pdf
1.5KE68A-B
Hersteller: Diodes Incorporated
Description: TVS DIODE 58.1VWM 92VC DO201
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 16.3A
Voltage - Reverse Standoff (Typ): 58.1V
Supplier Device Package: DO-201
Unidirectional Channels: 1
Voltage - Breakdown (Min): 64.6V
Voltage - Clamping (Max) @ Ipp: 92V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
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1.5KE68CA-B ds21503.pdf
1.5KE68CA-B
Hersteller: Diodes Incorporated
Description: TVS DIODE 58.1VWM 92VC DO201
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 16.3A
Voltage - Reverse Standoff (Typ): 58.1V
Supplier Device Package: DO-201
Bidirectional Channels: 1
Voltage - Breakdown (Min): 64.6V
Voltage - Clamping (Max) @ Ipp: 92V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Produkt ist nicht verfügbar
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DMTH4008LPDW-13 DMTH4008LPDW.pdf
DMTH4008LPDW-13
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 40V 10A PWRDI50
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.67W (Ta), 39.4W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 46.2A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 881pF @ 20V
Rds On (Max) @ Id, Vgs: 12.3mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12.3nC @ 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type UXD)
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AnzahlPreis
2500+0.59 EUR
5000+0.55 EUR
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DMTH4008LPDW-13 DMTH4008LPDW.pdf
DMTH4008LPDW-13
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 40V 10A PWRDI50
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.67W (Ta), 39.4W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 46.2A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 881pF @ 20V
Rds On (Max) @ Id, Vgs: 12.3mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12.3nC @ 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type UXD)
auf Bestellung 5470 Stücke:
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AnzahlPreis
8+2.24 EUR
13+1.41 EUR
100+0.93 EUR
500+0.73 EUR
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DMTH45M5SPDW-13 DMTH45M5SPDW.pdf
DMTH45M5SPDW-13
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 40V 79A PWRDI50
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.3W (Ta), 60W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 79A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1083pF @ 20V
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 25A, 10V
Gate Charge (Qg) (Max) @ Vgs: 13.2nC @ 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type UXD)
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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DMTH45M5SPDW-13 DMTH45M5SPDW.pdf
DMTH45M5SPDW-13
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 40V 79A PWRDI50
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.3W (Ta), 60W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 79A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1083pF @ 20V
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 25A, 10V
Gate Charge (Qg) (Max) @ Vgs: 13.2nC @ 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type UXD)
auf Bestellung 319 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
6+2.94 EUR
10+1.87 EUR
100+1.26 EUR
Mindestbestellmenge: 6 Stücke
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BC807-40FSW-7 BC807-16FSW_BC807-40FSW.pdf
Hersteller: Diodes Incorporated
Description: GENERAL PURPOSE TRANSISTOR U-DFN
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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BC807-40FSWQ-7 BC807-16FSW_BC807-40FSW.pdf
Hersteller: Diodes Incorporated
Description: GENERAL PURPOSE TRANSISTOR U-DFN
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
GBPC3510W GBPC35005_3510_W.pdf
Hersteller: Diodes Incorporated
Description: BRIDGE RECT 1P 1KV 35A GBPC-W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BC807-16FSW-7 BC807-16FSW_BC807-40FSW.pdf
Hersteller: Diodes Incorporated
Description: GENERAL PURPOSE TRANSISTOR U-DFN
auf Bestellung 65000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
5000+0.067 EUR
10000+0.06 EUR
15000+0.057 EUR
25000+0.053 EUR
35000+0.051 EUR
50000+0.049 EUR
Mindestbestellmenge: 5000 Stücke
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BC807-16FHW-7 BC807-16FHW-BC807-40FHW.pdf
Hersteller: Diodes Incorporated
Description: GENERAL PURPOSE TRANSISTOR U-DFN
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BC807-16FSWQ-7 BC807-16FSW_BC807-40FSW.pdf
Hersteller: Diodes Incorporated
Description: GENERAL PURPOSE TRANSISTOR U-DFN
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
FL2500073 FL.pdf
FL2500073
Hersteller: Diodes Incorporated
Description: CRYSTAL 25.0000MHZ 10PF SMD
auf Bestellung 261000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3000+0.54 EUR
6000+0.52 EUR
9000+0.51 EUR
15000+0.49 EUR
21000+0.48 EUR
30000+0.47 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
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