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DMP3011SPSW-13 DMP3011SPSW-13 Diodes Incorporated DMP3011SPSW.pdf Description: MOSFET BVDSS: 25V~30V PowerDI506
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 65A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 11.5A, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type UX)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2380 pF @ 15 V
Produkt ist nicht verfügbar
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DMTH47M2SPSW-13 DMTH47M2SPSW-13 Diodes Incorporated DMTH47M2SPSW.pdf Description: MOSFET BVDSS: 31V~40V POWERDI506
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 73A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 20A, 10V
Power Dissipation (Max): 3.3W (Ta), 68W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type UX)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 12.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 897 pF @ 20 V
Produkt ist nicht verfügbar
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DMP10H088SPSW-13 DMP10H088SPSW-13 Diodes Incorporated DMP10H088SPSW.pdf Description: IC
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 83mOhm @ 4.4A, 10V
Power Dissipation (Max): 2.2W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type UX)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 27.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1808 pF @ 50 V
Produkt ist nicht verfügbar
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DMWSH120H90SM4 DMWSH120H90SM4 Diodes Incorporated DMWSH120H90SM4.pdf Description: SICFET N-CH 1200V TO-247
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 97.5mOhm @ 20A, 15V
Power Dissipation (Max): 235W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 5mA
Supplier Device Package: TO-247-4
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 51.1 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1112 pF @ 1000 V
auf Bestellung 120320 Stücke:
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30+11.72 EUR
120+10.81 EUR
510+10.3 EUR
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DMWSH120H90SM3Q DMWSH120H90SM3Q Diodes Incorporated DMWSH120H90SM3Q.pdf Description: SICFET N-CH 1200V TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Tc)
Rds On (Max) @ Id, Vgs: 97.5mOhm @ 20A, 15V
Power Dissipation (Max): 246W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 5mA
Supplier Device Package: TO-247
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 50.9 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1090 pF @ 1000 V
Qualification: AEC-Q101
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DMWSH120H90SCT7-13 Diodes Incorporated DMWSH120H90SCT7.pdf Description: SICFET N-CH 1200V TO-247
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38.2A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 20A, 15V
Power Dissipation (Max): 197W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 5mA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 54.6 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1078 pF @ 1000 V
Produkt ist nicht verfügbar
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DMWSH120H90SCT7Q-13 Diodes Incorporated DMWSH120H90SCT7Q.pdf Description: SICFET N-CH 1200V TO-247
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38.2A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 20A, 15V
Power Dissipation (Max): 197W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 5mA
Supplier Device Package: TO-263-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 54.6 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1078 pF @ 1000 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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DMWSH120H90SCT7 Diodes Incorporated DMWSH120H90SCT7.pdf Description: SICFET N-CH 1200V TO-247
Packaging: Tube
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38.2A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 20A, 15V
Power Dissipation (Max): 197W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 5mA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 54.6 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1078 pF @ 1000 V
auf Bestellung 100 Stücke:
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50+9.63 EUR
Mindestbestellmenge: 50
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DMWSH120H90SCT7Q Diodes Incorporated DMWSH120H90SCT7Q.pdf Description: SICFET N-CH 1200V TO-247
Packaging: Tube
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38.2A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 20A, 15V
Power Dissipation (Max): 197W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 5mA
Supplier Device Package: TO-263-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 54.6 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1078 pF @ 1000 V
Qualification: AEC-Q101
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50+12.58 EUR
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1.5KE56CA-B 1.5KE56CA-B Diodes Incorporated ds21503.pdf Description: TVS DIODE 47.8VWM 77VC DO201
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 19.5A
Voltage - Reverse Standoff (Typ): 47.8V
Supplier Device Package: DO-201
Bidirectional Channels: 1
Voltage - Breakdown (Min): 53.2V
Voltage - Clamping (Max) @ Ipp: 77V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Produkt ist nicht verfügbar
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PI5A3166CEX PI5A3166CEX Diodes Incorporated PI5A3166.pdf Description: IC SW SPST-NOX1 1.2OHM SC70-5
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 1.2Ohm
-3db Bandwidth: 200MHz
Supplier Device Package: SC-70-5
Voltage - Supply, Single (V+): 1.65V ~ 5.5V
Charge Injection: 35pC
Switch Circuit: SPST - NO
Multiplexer/Demultiplexer Circuit: 1:1
Switch Time (Ton, Toff) (Max): 2ns, 5ns
Channel Capacitance (CS(off), CD(off)): 3.5pF
Current - Leakage (IS(off)) (Max): 20nA
Number of Circuits: 1
auf Bestellung 243000 Stücke:
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3000+0.22 EUR
9000+0.21 EUR
75000+0.2 EUR
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PI5A3166CEX PI5A3166CEX Diodes Incorporated PI5A3166.pdf Description: IC SW SPST-NOX1 1.2OHM SC70-5
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 1.2Ohm
-3db Bandwidth: 200MHz
Supplier Device Package: SC-70-5
Voltage - Supply, Single (V+): 1.65V ~ 5.5V
Charge Injection: 35pC
Switch Circuit: SPST - NO
Multiplexer/Demultiplexer Circuit: 1:1
Switch Time (Ton, Toff) (Max): 2ns, 5ns
Channel Capacitance (CS(off), CD(off)): 3.5pF
Current - Leakage (IS(off)) (Max): 20nA
Number of Circuits: 1
auf Bestellung 245178 Stücke:
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33+0.55 EUR
48+0.37 EUR
54+0.33 EUR
100+0.28 EUR
250+0.26 EUR
500+0.25 EUR
1000+0.24 EUR
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FN2000118 FN2000118 Diodes Incorporated FN_3-3V.pdf Description: XTAL OSC XO 20.0000MHZ CMOS SMD
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±50ppm
Voltage - Supply: 3.3V
Current - Supply (Max): 15mA
Supplier Device Package: 4-SMD (7x5)
Height - Seated (Max): 0.071" (1.80mm)
Frequency: 20 MHz
Base Resonator: Crystal
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12+1.58 EUR
13+1.38 EUR
50+1.25 EUR
100+1.2 EUR
500+1.09 EUR
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MBR1060 MBR1060 Diodes Incorporated ds23009.pdf Description: DIODE SCHOTTKY 60V 10A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 400pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
Produkt ist nicht verfügbar
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DMN6041SVTQ-13 DMN6041SVTQ-13 Diodes Incorporated DMN6041SVTQ.pdf Description: MOSFET BVDSS: 41V~60V TSOT26 T&R
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta)
Rds On (Max) @ Id, Vgs: 48mOhm @ 4.3A, 10V
Power Dissipation (Max): 900mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TSOT-26
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1190 pF @ 30 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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DMN6041SVT-7 DMN6041SVT-7 Diodes Incorporated DMN6041SVT.pdf Description: MOSFET BVDSS: 41V~60V TSOT26 T&R
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta)
Rds On (Max) @ Id, Vgs: 48mOhm @ 4.3A, 10V
Power Dissipation (Max): 900mW
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TSOT-26
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1190 pF @ 30 V
Produkt ist nicht verfügbar
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DMN6041SVTQ-7 DMN6041SVTQ-7 Diodes Incorporated DMN6041SVTQ.pdf Description: MOSFET BVDSS: 41V~60V TSOT26 T&R
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta)
Rds On (Max) @ Id, Vgs: 48mOhm @ 4.3A, 10V
Power Dissipation (Max): 900mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TSOT-26
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1190 pF @ 30 V
Qualification: AEC-Q101
auf Bestellung 18000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.25 EUR
6000+0.23 EUR
9000+0.22 EUR
15000+0.21 EUR
Mindestbestellmenge: 3000
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SDT12A120P5Q-13 Diodes Incorporated SDT12A120P5Q.pdf Description: SCHOTTKY RECTIFIER PDI5
Packaging: Tape & Reel (TR)
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SDT10H50P5-7 SDT10H50P5-7 Diodes Incorporated SDT10H50P5.pdf Description: DIODE SCHOTTKY 50V 10A POWERDI 5
Packaging: Tape & Reel (TR)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 10 A
Current - Reverse Leakage @ Vr: 300 µA @ 50 V
auf Bestellung 1500 Stücke:
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1500+0.28 EUR
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SDT10H50P5-7D SDT10H50P5-7D Diodes Incorporated SDT10H50P5.pdf Description: DIODE SCHOTTKY 50V 10A POWERDI 5
Packaging: Tape & Reel (TR)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 10 A
Current - Reverse Leakage @ Vr: 300 µA @ 50 V
Produkt ist nicht verfügbar
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B2100AQ-13 B2100AQ-13 Diodes Incorporated B2100AQ.pdf Description: DIODE SCHOTTKY 100V 2A SMA
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 75pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SMA
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 2 A
Current - Reverse Leakage @ Vr: 8 µA @ 100 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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1N4004-T 1N4004-T Diodes Incorporated ds28002.pdf Description: DIODE STANDARD 400V 1A DO41
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Produkt ist nicht verfügbar
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1N4004-T 1N4004-T Diodes Incorporated ds28002.pdf Description: DIODE STANDARD 400V 1A DO41
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Produkt ist nicht verfügbar
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GBJ15005 GBJ15005 Diodes Incorporated ds21219.pdf Description: BRIDGE RECT 1PHASE 50V 15A GBJ
Packaging: Tube
Package / Case: 4-SIP, GBJ
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBJ
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 7.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Produkt ist nicht verfügbar
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GBJ15005-F GBJ15005-F Diodes Incorporated ds21219.pdf Description: BRIDGE RECT 1PHASE 50V 15A GBJ
Packaging: Tube
Package / Case: 4-SIP, GBJ
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBJ
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 7.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
auf Bestellung 1200 Stücke:
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4+4.65 EUR
15+2.82 EUR
105+2.08 EUR
510+1.69 EUR
1005+1.57 EUR
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DF15005S DF15005S Diodes Incorporated DF15005S-DF1510S.pdf Description: BRIDGE RECT 1PHASE 50V 1.5A DF-S
Packaging: Bulk
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DF-S
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
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AL8866SP-13 AL8866SP-13 Diodes Incorporated AL8866.pdf Description: IC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Voltage - Output: 20V
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 400kHz
Type: DC DC Controller
Operating Temperature: -40°C ~ 105°C (TA)
Applications: LED Lighting
Internal Switch(s): Yes
Topology: SEPIC, Step-Down (Buck), Step-Up (Boost)
Supplier Device Package: 8-SO-EP
Dimming: Analog, PWM
Voltage - Supply (Min): 4.7V
Voltage - Supply (Max): 85V
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AL8866SP-13 AL8866SP-13 Diodes Incorporated AL8866.pdf Description: IC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Voltage - Output: 20V
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 400kHz
Type: DC DC Controller
Operating Temperature: -40°C ~ 105°C (TA)
Applications: LED Lighting
Internal Switch(s): Yes
Topology: SEPIC, Step-Down (Buck), Step-Up (Boost)
Supplier Device Package: 8-SO-EP
Dimming: Analog, PWM
Voltage - Supply (Min): 4.7V
Voltage - Supply (Max): 85V
Produkt ist nicht verfügbar
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MBR20100CT MBR20100CT Diodes Incorporated MBR2035CT SERIES_M2104.pdf MBR20100CT%20N0623%20REV.A.pdf mbr20100ct.pdf MBR20100CT-MBRF20100CT.pdf MBR20100CT.pdf MBR20%2880%2C90%2C100%29CT.pdf Description: DIODE ARR SCHOT 100V 10A TO2203
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 10 A
Current - Reverse Leakage @ Vr: 50 nA @ 100 V
Qualification: AEC-Q101
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MBR20100CTP MBR20100CTP Diodes Incorporated MBR20100CTP.pdf Description: DIODE ARR SCHOT 100V 10A ITO220S
Packaging: Tube
Package / Case: TO-220-3 Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: ITO-220S
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
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FL2400128 FL2400128 Diodes Incorporated FL.pdf Description: CRYSTAL 24.0000MHZ 10PF SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Load Capacitance: 10pF
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Type: MHz Crystal
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±25ppm
Frequency Tolerance: ±10ppm
Operating Mode: Fundamental
Supplier Device Package: 4-SMD (3.2x2.5)
Height - Seated (Max): 0.031" (0.78mm)
ESR (Equivalent Series Resistance): 60 Ohms
Frequency: 24 MHz
Produkt ist nicht verfügbar
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FL2400128W FL2400128W Diodes Incorporated FL.pdf Description: CRYSTAL SURFACE MOUNT
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Type: MHz Crystal
Operating Mode: Fundamental
Supplier Device Package: 4-SMD (3.2x2.5)
Height - Seated (Max): 0.031" (0.78mm)
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FL2400129 FL2400129 Diodes Incorporated FL.pdf Description: CRYSTAL 24.0000MHZ 20PF SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Load Capacitance: 20pF
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Type: MHz Crystal
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±20ppm
Frequency Tolerance: ±20ppm
Operating Mode: Fundamental
Supplier Device Package: 4-SMD (3.2x2.5)
Height - Seated (Max): 0.031" (0.78mm)
ESR (Equivalent Series Resistance): 60 Ohms
Frequency: 24 MHz
Produkt ist nicht verfügbar
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FL6240012Q FL6240012Q Diodes Incorporated FL.pdf Description: CRYSTAL 62.4000MHZ 6PF SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Load Capacitance: 6pF
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Type: MHz Crystal
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±15ppm
Frequency Tolerance: ±15ppm
Operating Mode: Fundamental
Supplier Device Package: 4-SMD (3.2x2.5)
Height - Seated (Max): 0.031" (0.78mm)
ESR (Equivalent Series Resistance): 40 Ohms
Frequency: 62.4 MHz
Produkt ist nicht verfügbar
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1.5KE68CA-B 1.5KE68CA-B Diodes Incorporated ds21503.pdf Description: TVS DIODE 58.1VWM 92VC DO201
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 16.3A
Voltage - Reverse Standoff (Typ): 58.1V
Supplier Device Package: DO-201
Bidirectional Channels: 1
Voltage - Breakdown (Min): 64.6V
Voltage - Clamping (Max) @ Ipp: 92V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
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SDM02M30DCP3-7 SDM02M30DCP3-7 Diodes Incorporated SDM02M30DCP3.pdf Description: DIODE ARR SCHOT 30V X3-DSN1006-3
Packaging: Cut Tape (CT)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.99 ns
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 400mA
Supplier Device Package: X3-DSN1006-3
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 200 mA
Current - Reverse Leakage @ Vr: 2 µA @ 30 V
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AH3234Q-P-B AH3234Q-P-B Diodes Incorporated AH3231Q-AH3234Q_AH3270Q-AH3272Q.pdf Description: HALL UNIPOLAR SWITCH SIP-3 BULK
Packaging: Bulk
Features: Temperature Compensated
Package / Case: 3-SIP
Output Type: Switch
Polarization: South Pole
Mounting Type: Through Hole
Function: Latch, Unipolar Switch
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 2.7V ~ 27V
Technology: Hall Effect
Sensing Range: 7mT Trip, 0.3mT Release
Current - Supply (Max): 6.9mA
Supplier Device Package: 3-SIP
Test Condition: -40°C ~ 150°C
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AH3231Q-P-B AH3231Q-P-B Diodes Incorporated AH323xQ_AH327xQ.pdf Description: Hall Unipolar Switch SIP-3 BULK
Packaging: Bulk
Features: Temperature Compensated
Package / Case: 3-SIP
Output Type: Current Source
Polarization: South Pole
Mounting Type: Through Hole
Function: Unipolar Switch
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 2.7V ~ 27V
Technology: Hall Effect
Sensing Range: 9mT Trip, 7mT Release
Current - Supply (Max): 6.9mA
Supplier Device Package: 3-SIP
Test Condition: 25°C
Grade: Automotive
Qualification: AEC-Q100
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1.5KE15CA-B 1.5KE15CA-B Diodes Incorporated ds21503.pdf Description: TVS DIODE 12.8VWM 21.2VC DO201
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 71A
Voltage - Reverse Standoff (Typ): 12.8V
Supplier Device Package: DO-201
Bidirectional Channels: 1
Voltage - Breakdown (Min): 14.3V
Voltage - Clamping (Max) @ Ipp: 21.2V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
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MBR20200CT MBR20200CT Diodes Incorporated MBR%28F%2920200CT.pdf Description: DIODE ARR SCHOT 200V 10A TO2203
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 890 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
Qualification: AEC-Q101
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GBU806 GBU806 Diodes Incorporated ds21227.pdf Description: BRIDGE RECT 1PHASE 600V 8A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 8 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
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2N5551 2N5551 Diodes Incorporated 2n5551.pdf 2N5551.pdf 2N5551%20TO-92-3.PDF 2n5551t-d.pdf Description: TRANS NPN 160V 0.2A TO-92
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: TO-92
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 625 mW
Produkt ist nicht verfügbar
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BAV21 BAV21 Diodes Incorporated BAV20%2C21.pdf Description: DIODE STANDARD 200V 200MA DO35
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-35
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
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ABS210-13 ABS210-13 Diodes Incorporated DIOD_S_A0003097066_1-2542100.pdf Bridge Rectifiers Bridge Rectifier
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HD01-T HD01-T Diodes Incorporated DIOD_S_A0009545762_1-2512798.pdf Bridge Rectifiers 0.8A 100V
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df06m df06m Diodes Incorporated ds21201.pdf Bridge Rectifiers 1.0A 600V
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DF04S-T DF04S-T Diodes Incorporated ds17001-3214722.pdf Bridge Rectifiers 400V 1A
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DF04M DF04M Diodes Incorporated ds21201.pdf Bridge Rectifiers 400V 1A
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DF1501S-T DF1501S-T Diodes Incorporated DF15005S-DF1510S.pdf Bridge Rectifiers 100V 1.5A
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GBU806 GBU806 Diodes Incorporated ds21227-3103855.pdf Bridge Rectifiers 8.0A 600V
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GBU810 GBU810 Diodes Incorporated ds21227-3103855.pdf Bridge Rectifiers 1000V 8A
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RH06-T RH06-T Diodes Incorporated ds30137.pdf Bridge Rectifiers 0.5A 600V
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DMP3011SPSW-13 DMP3011SPSW.pdf
DMP3011SPSW-13
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 25V~30V PowerDI506
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 65A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 11.5A, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type UX)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2380 pF @ 15 V
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DMTH47M2SPSW-13 DMTH47M2SPSW.pdf
DMTH47M2SPSW-13
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 31V~40V POWERDI506
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 73A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 20A, 10V
Power Dissipation (Max): 3.3W (Ta), 68W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type UX)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 12.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 897 pF @ 20 V
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DMP10H088SPSW-13 DMP10H088SPSW.pdf
DMP10H088SPSW-13
Hersteller: Diodes Incorporated
Description: IC
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 83mOhm @ 4.4A, 10V
Power Dissipation (Max): 2.2W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type UX)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 27.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1808 pF @ 50 V
Produkt ist nicht verfügbar
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DMWSH120H90SM4 DMWSH120H90SM4.pdf
DMWSH120H90SM4
Hersteller: Diodes Incorporated
Description: SICFET N-CH 1200V TO-247
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 97.5mOhm @ 20A, 15V
Power Dissipation (Max): 235W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 5mA
Supplier Device Package: TO-247-4
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 51.1 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1112 pF @ 1000 V
auf Bestellung 120320 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+16.81 EUR
30+11.72 EUR
120+10.81 EUR
510+10.3 EUR
Mindestbestellmenge: 2
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DMWSH120H90SM3Q DMWSH120H90SM3Q.pdf
DMWSH120H90SM3Q
Hersteller: Diodes Incorporated
Description: SICFET N-CH 1200V TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Tc)
Rds On (Max) @ Id, Vgs: 97.5mOhm @ 20A, 15V
Power Dissipation (Max): 246W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 5mA
Supplier Device Package: TO-247
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 50.9 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1090 pF @ 1000 V
Qualification: AEC-Q101
auf Bestellung 1195 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+20.63 EUR
30+14.15 EUR
120+13.3 EUR
510+13.04 EUR
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DMWSH120H90SCT7-13 DMWSH120H90SCT7.pdf
Hersteller: Diodes Incorporated
Description: SICFET N-CH 1200V TO-247
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38.2A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 20A, 15V
Power Dissipation (Max): 197W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 5mA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 54.6 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1078 pF @ 1000 V
Produkt ist nicht verfügbar
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DMWSH120H90SCT7Q-13 DMWSH120H90SCT7Q.pdf
Hersteller: Diodes Incorporated
Description: SICFET N-CH 1200V TO-247
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38.2A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 20A, 15V
Power Dissipation (Max): 197W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 5mA
Supplier Device Package: TO-263-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 54.6 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1078 pF @ 1000 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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DMWSH120H90SCT7 DMWSH120H90SCT7.pdf
Hersteller: Diodes Incorporated
Description: SICFET N-CH 1200V TO-247
Packaging: Tube
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38.2A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 20A, 15V
Power Dissipation (Max): 197W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 5mA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 54.6 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1078 pF @ 1000 V
auf Bestellung 100 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
50+9.63 EUR
Mindestbestellmenge: 50
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DMWSH120H90SCT7Q DMWSH120H90SCT7Q.pdf
Hersteller: Diodes Incorporated
Description: SICFET N-CH 1200V TO-247
Packaging: Tube
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38.2A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 20A, 15V
Power Dissipation (Max): 197W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 5mA
Supplier Device Package: TO-263-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 54.6 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1078 pF @ 1000 V
Qualification: AEC-Q101
auf Bestellung 1450 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
50+12.58 EUR
Mindestbestellmenge: 50
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1.5KE56CA-B ds21503.pdf
1.5KE56CA-B
Hersteller: Diodes Incorporated
Description: TVS DIODE 47.8VWM 77VC DO201
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 19.5A
Voltage - Reverse Standoff (Typ): 47.8V
Supplier Device Package: DO-201
Bidirectional Channels: 1
Voltage - Breakdown (Min): 53.2V
Voltage - Clamping (Max) @ Ipp: 77V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Produkt ist nicht verfügbar
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PI5A3166CEX PI5A3166.pdf
PI5A3166CEX
Hersteller: Diodes Incorporated
Description: IC SW SPST-NOX1 1.2OHM SC70-5
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 1.2Ohm
-3db Bandwidth: 200MHz
Supplier Device Package: SC-70-5
Voltage - Supply, Single (V+): 1.65V ~ 5.5V
Charge Injection: 35pC
Switch Circuit: SPST - NO
Multiplexer/Demultiplexer Circuit: 1:1
Switch Time (Ton, Toff) (Max): 2ns, 5ns
Channel Capacitance (CS(off), CD(off)): 3.5pF
Current - Leakage (IS(off)) (Max): 20nA
Number of Circuits: 1
auf Bestellung 243000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.22 EUR
9000+0.21 EUR
75000+0.2 EUR
Mindestbestellmenge: 3000
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PI5A3166CEX PI5A3166.pdf
PI5A3166CEX
Hersteller: Diodes Incorporated
Description: IC SW SPST-NOX1 1.2OHM SC70-5
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 1.2Ohm
-3db Bandwidth: 200MHz
Supplier Device Package: SC-70-5
Voltage - Supply, Single (V+): 1.65V ~ 5.5V
Charge Injection: 35pC
Switch Circuit: SPST - NO
Multiplexer/Demultiplexer Circuit: 1:1
Switch Time (Ton, Toff) (Max): 2ns, 5ns
Channel Capacitance (CS(off), CD(off)): 3.5pF
Current - Leakage (IS(off)) (Max): 20nA
Number of Circuits: 1
auf Bestellung 245178 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
33+0.55 EUR
48+0.37 EUR
54+0.33 EUR
100+0.28 EUR
250+0.26 EUR
500+0.25 EUR
1000+0.24 EUR
Mindestbestellmenge: 33
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FN2000118 FN_3-3V.pdf
FN2000118
Hersteller: Diodes Incorporated
Description: XTAL OSC XO 20.0000MHZ CMOS SMD
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±50ppm
Voltage - Supply: 3.3V
Current - Supply (Max): 15mA
Supplier Device Package: 4-SMD (7x5)
Height - Seated (Max): 0.071" (1.80mm)
Frequency: 20 MHz
Base Resonator: Crystal
auf Bestellung 970 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
12+1.58 EUR
13+1.38 EUR
50+1.25 EUR
100+1.2 EUR
500+1.09 EUR
Mindestbestellmenge: 12
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MBR1060 ds23009.pdf
MBR1060
Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 60V 10A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 400pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
Produkt ist nicht verfügbar
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DMN6041SVTQ-13 DMN6041SVTQ.pdf
DMN6041SVTQ-13
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 41V~60V TSOT26 T&R
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta)
Rds On (Max) @ Id, Vgs: 48mOhm @ 4.3A, 10V
Power Dissipation (Max): 900mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TSOT-26
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1190 pF @ 30 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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DMN6041SVT-7 DMN6041SVT.pdf
DMN6041SVT-7
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 41V~60V TSOT26 T&R
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta)
Rds On (Max) @ Id, Vgs: 48mOhm @ 4.3A, 10V
Power Dissipation (Max): 900mW
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TSOT-26
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1190 pF @ 30 V
Produkt ist nicht verfügbar
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DMN6041SVTQ-7 DMN6041SVTQ.pdf
DMN6041SVTQ-7
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 41V~60V TSOT26 T&R
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta)
Rds On (Max) @ Id, Vgs: 48mOhm @ 4.3A, 10V
Power Dissipation (Max): 900mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TSOT-26
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1190 pF @ 30 V
Qualification: AEC-Q101
auf Bestellung 18000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.25 EUR
6000+0.23 EUR
9000+0.22 EUR
15000+0.21 EUR
Mindestbestellmenge: 3000
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SDT12A120P5Q-13 SDT12A120P5Q.pdf
Hersteller: Diodes Incorporated
Description: SCHOTTKY RECTIFIER PDI5
Packaging: Tape & Reel (TR)
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SDT10H50P5-7 SDT10H50P5.pdf
SDT10H50P5-7
Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 50V 10A POWERDI 5
Packaging: Tape & Reel (TR)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 10 A
Current - Reverse Leakage @ Vr: 300 µA @ 50 V
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1500+0.28 EUR
Mindestbestellmenge: 1500
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SDT10H50P5-7D SDT10H50P5.pdf
SDT10H50P5-7D
Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 50V 10A POWERDI 5
Packaging: Tape & Reel (TR)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 10 A
Current - Reverse Leakage @ Vr: 300 µA @ 50 V
Produkt ist nicht verfügbar
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B2100AQ-13 B2100AQ.pdf
B2100AQ-13
Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 100V 2A SMA
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 75pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SMA
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 2 A
Current - Reverse Leakage @ Vr: 8 µA @ 100 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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1N4004-T ds28002.pdf
1N4004-T
Hersteller: Diodes Incorporated
Description: DIODE STANDARD 400V 1A DO41
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Produkt ist nicht verfügbar
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1N4004-T ds28002.pdf
1N4004-T
Hersteller: Diodes Incorporated
Description: DIODE STANDARD 400V 1A DO41
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Produkt ist nicht verfügbar
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GBJ15005 ds21219.pdf
GBJ15005
Hersteller: Diodes Incorporated
Description: BRIDGE RECT 1PHASE 50V 15A GBJ
Packaging: Tube
Package / Case: 4-SIP, GBJ
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBJ
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 7.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Produkt ist nicht verfügbar
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GBJ15005-F ds21219.pdf
GBJ15005-F
Hersteller: Diodes Incorporated
Description: BRIDGE RECT 1PHASE 50V 15A GBJ
Packaging: Tube
Package / Case: 4-SIP, GBJ
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBJ
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 7.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
auf Bestellung 1200 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.65 EUR
15+2.82 EUR
105+2.08 EUR
510+1.69 EUR
1005+1.57 EUR
Mindestbestellmenge: 4
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DF15005S DF15005S-DF1510S.pdf
DF15005S
Hersteller: Diodes Incorporated
Description: BRIDGE RECT 1PHASE 50V 1.5A DF-S
Packaging: Bulk
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DF-S
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
auf Bestellung 3484 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+2.01 EUR
50+1.13 EUR
100+0.83 EUR
500+0.55 EUR
1000+0.52 EUR
2000+0.51 EUR
Mindestbestellmenge: 9
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AL8866SP-13 AL8866.pdf
AL8866SP-13
Hersteller: Diodes Incorporated
Description: IC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Voltage - Output: 20V
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 400kHz
Type: DC DC Controller
Operating Temperature: -40°C ~ 105°C (TA)
Applications: LED Lighting
Internal Switch(s): Yes
Topology: SEPIC, Step-Down (Buck), Step-Up (Boost)
Supplier Device Package: 8-SO-EP
Dimming: Analog, PWM
Voltage - Supply (Min): 4.7V
Voltage - Supply (Max): 85V
Produkt ist nicht verfügbar
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AL8866SP-13 AL8866.pdf
AL8866SP-13
Hersteller: Diodes Incorporated
Description: IC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Voltage - Output: 20V
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 400kHz
Type: DC DC Controller
Operating Temperature: -40°C ~ 105°C (TA)
Applications: LED Lighting
Internal Switch(s): Yes
Topology: SEPIC, Step-Down (Buck), Step-Up (Boost)
Supplier Device Package: 8-SO-EP
Dimming: Analog, PWM
Voltage - Supply (Min): 4.7V
Voltage - Supply (Max): 85V
Produkt ist nicht verfügbar
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MBR20100CT MBR2035CT SERIES_M2104.pdf MBR20100CT%20N0623%20REV.A.pdf mbr20100ct.pdf MBR20100CT-MBRF20100CT.pdf MBR20100CT.pdf MBR20%2880%2C90%2C100%29CT.pdf
MBR20100CT
Hersteller: Diodes Incorporated
Description: DIODE ARR SCHOT 100V 10A TO2203
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 10 A
Current - Reverse Leakage @ Vr: 50 nA @ 100 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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MBR20100CTP MBR20100CTP.pdf
MBR20100CTP
Hersteller: Diodes Incorporated
Description: DIODE ARR SCHOT 100V 10A ITO220S
Packaging: Tube
Package / Case: TO-220-3 Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: ITO-220S
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
Produkt ist nicht verfügbar
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FL2400128 FL.pdf
FL2400128
Hersteller: Diodes Incorporated
Description: CRYSTAL 24.0000MHZ 10PF SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Load Capacitance: 10pF
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Type: MHz Crystal
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±25ppm
Frequency Tolerance: ±10ppm
Operating Mode: Fundamental
Supplier Device Package: 4-SMD (3.2x2.5)
Height - Seated (Max): 0.031" (0.78mm)
ESR (Equivalent Series Resistance): 60 Ohms
Frequency: 24 MHz
Produkt ist nicht verfügbar
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FL2400128W FL.pdf
FL2400128W
Hersteller: Diodes Incorporated
Description: CRYSTAL SURFACE MOUNT
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Type: MHz Crystal
Operating Mode: Fundamental
Supplier Device Package: 4-SMD (3.2x2.5)
Height - Seated (Max): 0.031" (0.78mm)
auf Bestellung 243000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.52 EUR
Mindestbestellmenge: 3000
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FL2400129 FL.pdf
FL2400129
Hersteller: Diodes Incorporated
Description: CRYSTAL 24.0000MHZ 20PF SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Load Capacitance: 20pF
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Type: MHz Crystal
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±20ppm
Frequency Tolerance: ±20ppm
Operating Mode: Fundamental
Supplier Device Package: 4-SMD (3.2x2.5)
Height - Seated (Max): 0.031" (0.78mm)
ESR (Equivalent Series Resistance): 60 Ohms
Frequency: 24 MHz
Produkt ist nicht verfügbar
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FL6240012Q FL.pdf
FL6240012Q
Hersteller: Diodes Incorporated
Description: CRYSTAL 62.4000MHZ 6PF SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Load Capacitance: 6pF
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Type: MHz Crystal
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±15ppm
Frequency Tolerance: ±15ppm
Operating Mode: Fundamental
Supplier Device Package: 4-SMD (3.2x2.5)
Height - Seated (Max): 0.031" (0.78mm)
ESR (Equivalent Series Resistance): 40 Ohms
Frequency: 62.4 MHz
Produkt ist nicht verfügbar
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1.5KE68CA-B ds21503.pdf
1.5KE68CA-B
Hersteller: Diodes Incorporated
Description: TVS DIODE 58.1VWM 92VC DO201
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 16.3A
Voltage - Reverse Standoff (Typ): 58.1V
Supplier Device Package: DO-201
Bidirectional Channels: 1
Voltage - Breakdown (Min): 64.6V
Voltage - Clamping (Max) @ Ipp: 92V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Produkt ist nicht verfügbar
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SDM02M30DCP3-7 SDM02M30DCP3.pdf
SDM02M30DCP3-7
Hersteller: Diodes Incorporated
Description: DIODE ARR SCHOT 30V X3-DSN1006-3
Packaging: Cut Tape (CT)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.99 ns
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 400mA
Supplier Device Package: X3-DSN1006-3
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 200 mA
Current - Reverse Leakage @ Vr: 2 µA @ 30 V
auf Bestellung 155000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
38+0.48 EUR
62+0.29 EUR
100+0.18 EUR
500+0.13 EUR
1000+0.12 EUR
2000+0.1 EUR
Mindestbestellmenge: 38
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AH3234Q-P-B AH3231Q-AH3234Q_AH3270Q-AH3272Q.pdf
AH3234Q-P-B
Hersteller: Diodes Incorporated
Description: HALL UNIPOLAR SWITCH SIP-3 BULK
Packaging: Bulk
Features: Temperature Compensated
Package / Case: 3-SIP
Output Type: Switch
Polarization: South Pole
Mounting Type: Through Hole
Function: Latch, Unipolar Switch
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 2.7V ~ 27V
Technology: Hall Effect
Sensing Range: 7mT Trip, 0.3mT Release
Current - Supply (Max): 6.9mA
Supplier Device Package: 3-SIP
Test Condition: -40°C ~ 150°C
auf Bestellung 9970 Stücke:
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Anzahl Preis
22+0.81 EUR
25+0.72 EUR
26+0.68 EUR
28+0.63 EUR
50+0.6 EUR
100+0.57 EUR
500+0.52 EUR
1000+0.5 EUR
5000+0.45 EUR
Mindestbestellmenge: 22
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AH3231Q-P-B AH323xQ_AH327xQ.pdf
AH3231Q-P-B
Hersteller: Diodes Incorporated
Description: Hall Unipolar Switch SIP-3 BULK
Packaging: Bulk
Features: Temperature Compensated
Package / Case: 3-SIP
Output Type: Current Source
Polarization: South Pole
Mounting Type: Through Hole
Function: Unipolar Switch
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 2.7V ~ 27V
Technology: Hall Effect
Sensing Range: 9mT Trip, 7mT Release
Current - Supply (Max): 6.9mA
Supplier Device Package: 3-SIP
Test Condition: 25°C
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 14975 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
22+0.81 EUR
25+0.72 EUR
26+0.68 EUR
28+0.63 EUR
50+0.6 EUR
100+0.57 EUR
500+0.52 EUR
1000+0.5 EUR
5000+0.45 EUR
Mindestbestellmenge: 22
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1.5KE15CA-B ds21503.pdf
1.5KE15CA-B
Hersteller: Diodes Incorporated
Description: TVS DIODE 12.8VWM 21.2VC DO201
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 71A
Voltage - Reverse Standoff (Typ): 12.8V
Supplier Device Package: DO-201
Bidirectional Channels: 1
Voltage - Breakdown (Min): 14.3V
Voltage - Clamping (Max) @ Ipp: 21.2V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Produkt ist nicht verfügbar
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MBR20200CT MBR%28F%2920200CT.pdf
MBR20200CT
Hersteller: Diodes Incorporated
Description: DIODE ARR SCHOT 200V 10A TO2203
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 890 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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GBU806 ds21227.pdf
GBU806
Hersteller: Diodes Incorporated
Description: BRIDGE RECT 1PHASE 600V 8A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 8 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
auf Bestellung 43234 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.57 EUR
20+1.33 EUR
100+0.97 EUR
500+0.88 EUR
1000+0.81 EUR
2000+0.79 EUR
Mindestbestellmenge: 7
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2N5551 2n5551.pdf 2N5551.pdf 2N5551%20TO-92-3.PDF 2n5551t-d.pdf
2N5551
Hersteller: Diodes Incorporated
Description: TRANS NPN 160V 0.2A TO-92
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: TO-92
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 625 mW
Produkt ist nicht verfügbar
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BAV21 BAV20%2C21.pdf
BAV21
Hersteller: Diodes Incorporated
Description: DIODE STANDARD 200V 200MA DO35
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-35
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
Produkt ist nicht verfügbar
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ABS210-13 DIOD_S_A0003097066_1-2542100.pdf
ABS210-13
Hersteller: Diodes Incorporated
Bridge Rectifiers Bridge Rectifier
auf Bestellung 34038 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+0.76 EUR
10+0.47 EUR
100+0.3 EUR
500+0.22 EUR
1000+0.18 EUR
5000+0.15 EUR
10000+0.14 EUR
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MB10F-13 DIOD_S_A0003097097_1-2542058.pdf
MB10F-13
Hersteller: Diodes Incorporated
Bridge Rectifiers Bridge Rectifier
auf Bestellung 15057 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+0.82 EUR
10+0.54 EUR
100+0.35 EUR
500+0.26 EUR
1000+0.21 EUR
5000+0.18 EUR
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MB10S-13 DIOD_S_A0003097176_1-2542130.pdf
MB10S-13
Hersteller: Diodes Incorporated
Bridge Rectifiers Bridge Rectifier
auf Bestellung 17922 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+0.68 EUR
10+0.42 EUR
100+0.27 EUR
500+0.18 EUR
1000+0.17 EUR
3000+0.14 EUR
6000+0.13 EUR
Mindestbestellmenge: 5
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HD01-T DIOD_S_A0009545762_1-2512798.pdf
HD01-T
Hersteller: Diodes Incorporated
Bridge Rectifiers 0.8A 100V
auf Bestellung 8472 Stücke:
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Anzahl Preis
4+0.79 EUR
10+0.55 EUR
100+0.36 EUR
500+0.27 EUR
1000+0.21 EUR
3000+0.18 EUR
6000+0.17 EUR
Mindestbestellmenge: 4
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HD04-T DIOD_S_A0009545762_1-2512798.pdf
HD04-T
Hersteller: Diodes Incorporated
Bridge Rectifiers 400V 0.8A
auf Bestellung 11470 Stücke:
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5+0.65 EUR
10+0.58 EUR
100+0.38 EUR
500+0.29 EUR
1000+0.22 EUR
3000+0.18 EUR
9000+0.16 EUR
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HD06-T DIOD_S_A0009545762_1-2512798.pdf
HD06-T
Hersteller: Diodes Incorporated
Bridge Rectifiers 600V 0.8A
auf Bestellung 27828 Stücke:
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4+0.89 EUR
10+0.65 EUR
100+0.42 EUR
500+0.32 EUR
1000+0.27 EUR
3000+0.2 EUR
6000+0.19 EUR
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df06m ds21201.pdf
df06m
Hersteller: Diodes Incorporated
Bridge Rectifiers 1.0A 600V
auf Bestellung 989 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+0.82 EUR
10+0.44 EUR
100+0.38 EUR
250+0.36 EUR
500+0.28 EUR
1000+0.23 EUR
2500+0.21 EUR
Mindestbestellmenge: 4
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DF04S-T ds17001-3214722.pdf
DF04S-T
Hersteller: Diodes Incorporated
Bridge Rectifiers 400V 1A
auf Bestellung 36091 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+0.84 EUR
10+0.58 EUR
100+0.41 EUR
500+0.31 EUR
1000+0.22 EUR
1500+0.2 EUR
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DLPA006-7 DIODS09832_1-2512536.pdf
DLPA006-7
Hersteller: Diodes Incorporated
Bridge Rectifiers 85V 160mA 200mW
auf Bestellung 7451 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+0.72 EUR
10+0.63 EUR
100+0.47 EUR
500+0.39 EUR
1000+0.36 EUR
3000+0.34 EUR
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GBJ1010-F ds21218.pdf
GBJ1010-F
Hersteller: Diodes Incorporated
Bridge Rectifiers 1000V 10A
auf Bestellung 48 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+4.31 EUR
10+2.6 EUR
105+1.9 EUR
510+1.58 EUR
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DF06S-T ds17001-3214722.pdf
DF06S-T
Hersteller: Diodes Incorporated
Bridge Rectifiers 1A 600Vrrm 50Ifsm
auf Bestellung 14621 Stücke:
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Anzahl Preis
4+0.93 EUR
10+0.61 EUR
100+0.42 EUR
500+0.33 EUR
1000+0.24 EUR
1500+0.22 EUR
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HD02-T DIOD_S_A0009545762_1-2512798.pdf
HD02-T
Hersteller: Diodes Incorporated
Bridge Rectifiers 200V 0.8A
auf Bestellung 5523 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+0.7 EUR
10+0.58 EUR
100+0.39 EUR
500+0.28 EUR
1000+0.22 EUR
3000+0.2 EUR
6000+0.19 EUR
Mindestbestellmenge: 5
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DF04M ds21201.pdf
DF04M
Hersteller: Diodes Incorporated
Bridge Rectifiers 400V 1A
Produkt ist nicht verfügbar
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DF1501S-T DF15005S-DF1510S.pdf
DF1501S-T
Hersteller: Diodes Incorporated
Bridge Rectifiers 100V 1.5A
auf Bestellung 12623 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+0.79 EUR
10+0.63 EUR
100+0.43 EUR
500+0.34 EUR
1000+0.33 EUR
1500+0.25 EUR
Mindestbestellmenge: 4
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GBU806 ds21227-3103855.pdf
GBU806
Hersteller: Diodes Incorporated
Bridge Rectifiers 8.0A 600V
auf Bestellung 627 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+2.69 EUR
10+1.4 EUR
100+1.02 EUR
500+1 EUR
Mindestbestellmenge: 2
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GBU810 ds21227-3103855.pdf
GBU810
Hersteller: Diodes Incorporated
Bridge Rectifiers 1000V 8A
auf Bestellung 426 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+1.95 EUR
10+1.57 EUR
20+1.37 EUR
100+1.04 EUR
260+0.88 EUR
500+0.8 EUR
1000+0.67 EUR
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RH06-T ds30137.pdf
RH06-T
Hersteller: Diodes Incorporated
Bridge Rectifiers 0.5A 600V
auf Bestellung 20653 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+1.61 EUR
10+1.02 EUR
100+0.72 EUR
500+0.57 EUR
1000+0.51 EUR
3000+0.43 EUR
Mindestbestellmenge: 2
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