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DMTH8004LPS-13 DMTH8004LPS-13 Diodes Incorporated DMTH8004LPS.pdf Description: MOSFET BVDSS: 61V~100V POWERDI50
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 20A, 10V
Power Dissipation (Max): 1.5W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Supplier Device Package: PowerDI5060-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4979 pF @ 40 V
Produkt ist nicht verfügbar
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DMTH8003SPSWQ-13 DMTH8003SPSWQ-13 Diodes Incorporated DMTH8003SPSWQ.pdf Description: MOSFET BVDSS: 61V~100V POWERDI50
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 105A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 30A, 10V
Power Dissipation (Max): 3.75W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type UX)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 136 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9081 pF @ 40 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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DMTH8003SPSW-13 DMTH8003SPSW-13 Diodes Incorporated DMTH8003SPSW.pdf Description: MOSFET BVDSS: 61V~100V POWERDI50
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 105A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 30A, 10V
Power Dissipation (Max): 3.75W (Ta), 99W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type UX)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 136 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9081 pF @ 40 V
Produkt ist nicht verfügbar
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DMTH8003STLW-13 DMTH8003STLW-13 Diodes Incorporated DMTH8003STLW.pdf Description: MOSFET BVDSS: 61V~100V POWERDI10
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 173A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 30A, 10V
Power Dissipation (Max): 5.6W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: POWERDI1012-8
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8191 pF @ 40 V
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DMTH8003STLWQ-13 DMTH8003STLWQ-13 Diodes Incorporated DMTH8003STLWQ.pdf Description: MOSFET BVDSS: 61V~100V POWERDI10
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 173A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 30A, 10V
Power Dissipation (Max): 5.6W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: POWERDI1012-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8191 pF @ 40 V
Qualification: AEC-Q101
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DMTH8001STLW-13 DMTH8001STLW-13 Diodes Incorporated DMTH8001STLW.pdf Description: MOSFET BVDSS: 61V~100V POWERDI10
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 270A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 30A, 10V
Power Dissipation (Max): 6W (Ta), 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: POWERDI1012-8
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 138 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8894 pF @ 50 V
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DF08M DF08M Diodes Incorporated ds21201.pdf Description: BRIDGE RECT 1PHASE 800V 1A DFM
Packaging: Tube
Package / Case: 4-EDIP (0.300", 7.62mm)
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DFM
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
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5000+0.24 EUR
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MMSZ5241BS-7 MMSZ5241BS-7 Diodes Incorporated ds31038.pdf Description: DIODE ZENER 11V 200MW SOD323
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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DMP68D1LQ-7 DMP68D1LQ-7 Diodes Incorporated DMP68D1LQ.pdf Description: 2N7002 FAMILY SOT23 T&R 3K
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 206mA (Ta)
Rds On (Max) @ Id, Vgs: 7.5Ohm @ 100mA, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: SOT-23-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 42 pF @ 30 V
Qualification: AEC-Q101
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77+0.23 EUR
113+0.16 EUR
130+0.14 EUR
153+0.12 EUR
250+0.11 EUR
500+0.1 EUR
1000+0.095 EUR
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2N7002EQ-7-F 2N7002EQ-7-F Diodes Incorporated 2N7002EQ.pdf Description: 2N7002 FAMILY SOT23 T&R 3K
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 292mA (Ta)
Rds On (Max) @ Id, Vgs: 3Ohm @ 250mA, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 35 pF @ 30 V
Qualification: AEC-Q101
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70+0.25 EUR
112+0.16 EUR
500+0.12 EUR
1000+0.1 EUR
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DMN62D2UQ-7 DMN62D2UQ-7 Diodes Incorporated DMN62D2UQ.pdf Description: 2N7002 FAMILY SOT23 T&R 3K
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 390mA (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 41 pF @ 30 V
Qualification: AEC-Q101
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100+0.22 EUR
500+0.14 EUR
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DMN62D2UQ-7 DMN62D2UQ-7 Diodes Incorporated DMN62D2UQ.pdf Description: 2N7002 FAMILY SOT23 T&R 3K
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 390mA (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 41 pF @ 30 V
Qualification: AEC-Q101
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31+0.58 EUR
47+0.38 EUR
100+0.22 EUR
500+0.14 EUR
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DMN62D1SFBW-7B Diodes Incorporated DMN62D1SFBW.pdf Description: 2N7002 FAMILY X2-DFN1006-3 T&R
Packaging: Tape & Reel (TR)
Package / Case: 3-UFDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 528mA (Ta)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 40mA, 10V
Power Dissipation (Max): 500µW (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: U-DFN1006-3/SWP (Type UX)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 43 pF @ 40 V
Produkt ist nicht verfügbar
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DMN62D1SFBWQ-7B Diodes Incorporated DMN62D1SFBWQ.pdf Description: 2N7002 FAMILY X2-DFN1006-3 T&R
Packaging: Tape & Reel (TR)
Package / Case: 3-UFDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 538mA (Ta)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 40mA, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: U-DFN1006-3/SWP (Type UX)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 43 pF @ 40 V
Qualification: AEC-Q101
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10000+0.071 EUR
20000+0.065 EUR
30000+0.061 EUR
50000+0.058 EUR
70000+0.056 EUR
100000+0.053 EUR
250000+0.051 EUR
Mindestbestellmenge: 10000
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DMTH6016LSD-13 DMTH6016LSD-13 Diodes Incorporated DMTH6016LSD.pdf Description: MOSFET 2N-CH 7.6A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C: 7.6A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 864pF @ 30V
Rds On (Max) @ Id, Vgs: 19.5mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Grade: Automotive
Qualification: AEC-Q101
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DMTH6016LSD-13 DMTH6016LSD-13 Diodes Incorporated DMTH6016LSD.pdf Description: MOSFET 2N-CH 7.6A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C: 7.6A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 864pF @ 30V
Rds On (Max) @ Id, Vgs: 19.5mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1097 Stücke:
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9+2.13 EUR
14+1.35 EUR
100+0.89 EUR
500+0.7 EUR
1000+0.64 EUR
Mindestbestellmenge: 9
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MBR745 MBR745 Diodes Incorporated ds23007.pdf Description: DIODE SCHOTTKY 45V 7.5A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 400pF @ 4V, 1MHz
Current - Average Rectified (Io): 7.5A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 15 A
Current - Reverse Leakage @ Vr: 100 µA @ 45 V
Produkt ist nicht verfügbar
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BZX84C7V5Q-7-F BZX84C7V5Q-7-F Diodes Incorporated ds18001.pdf Description: DIODE ZENER 7.5V 300MW SOT23
Tolerance: ±6%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 7.5 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOT-23-3
Grade: Automotive
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 1 µA @ 5 V
Qualification: AEC-Q101
auf Bestellung 51000 Stücke:
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63+0.28 EUR
95+0.19 EUR
150+0.12 EUR
500+0.075 EUR
1000+0.065 EUR
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BZX84C7V5Q-7-F BZX84C7V5Q-7-F Diodes Incorporated ds18001.pdf Description: DIODE ZENER 7.5V 300MW SOT23
Tolerance: ±6%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 7.5 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOT-23-3
Grade: Automotive
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 1 µA @ 5 V
Qualification: AEC-Q101
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ZXTD718MCTA ZXTD718MCTA Diodes Incorporated ZXTD718MC.pdf Description: TRANS 2PNP 20V 3.5A W-DFN3020-8
Packaging: Tape & Reel (TR)
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.7W
Current - Collector (Ic) (Max): 3.5A
Voltage - Collector Emitter Breakdown (Max): 20V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 350mA, 3.5A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 2V
Frequency - Transition: 150MHz
Supplier Device Package: W-DFN3020-8
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ZXTD718MCTA ZXTD718MCTA Diodes Incorporated ZXTD718MC.pdf Description: TRANS 2PNP 20V 3.5A W-DFN3020-8
Packaging: Cut Tape (CT)
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.7W
Current - Collector (Ic) (Max): 3.5A
Voltage - Collector Emitter Breakdown (Max): 20V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 350mA, 3.5A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 2V
Frequency - Transition: 150MHz
Supplier Device Package: W-DFN3020-8
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10+1.88 EUR
15+1.18 EUR
100+0.78 EUR
500+0.61 EUR
1000+0.55 EUR
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DFLS240LX-7 DFLS240LX-7 Diodes Incorporated Description: DIODE SCHOTTK 40V 2A POWERDI 123
Packaging: Cut Tape (CT)
Package / Case: POWERDI®123
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 250pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: PowerDI™ 123
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
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112+0.16 EUR
162+0.11 EUR
187+0.094 EUR
222+0.079 EUR
250+0.072 EUR
500+0.068 EUR
1000+0.064 EUR
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DFLZ11Q-7 DFLZ11Q-7 Diodes Incorporated DFLZxxQ.pdf Description: DIODE ZENER 11V 1W POWERDI 123
Packaging: Cut Tape (CT)
Tolerance: ±5.45%
Package / Case: POWERDI®123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 11 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: PowerDI™ 123
Grade: Automotive
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 4 µA @ 8.2 V
Qualification: AEC-Q101
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19+0.93 EUR
31+0.58 EUR
100+0.37 EUR
500+0.28 EUR
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DFLZ27Q-7 DFLZ27Q-7 Diodes Incorporated DFLZxxQ.pdf Description: DIODE ZENER 27V 1W POWERDI 123
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: POWERDI®123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 3 Ohms
Supplier Device Package: PowerDI™ 123
Grade: Automotive
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 20 V
Qualification: AEC-Q101
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DFLZ27Q-7 DFLZ27Q-7 Diodes Incorporated DFLZxxQ.pdf Description: DIODE ZENER 27V 1W POWERDI 123
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: POWERDI®123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 3 Ohms
Supplier Device Package: PowerDI™ 123
Grade: Automotive
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 20 V
Qualification: AEC-Q101
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DFLT36AQ-7 DFLT36AQ-7 Diodes Incorporated DFLT5V0AQ-DFLT40AQ.pdf Description: TVS DIODE 36VWM 58.1VC PWRDI 123
Packaging: Cut Tape (CT)
Package / Case: POWERDI®123
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 3.87A
Voltage - Reverse Standoff (Typ): 36V
Supplier Device Package: PowerDI™ 123
Unidirectional Channels: 1
Voltage - Breakdown (Min): 40V
Voltage - Clamping (Max) @ Ipp: 58.1V
Power - Peak Pulse: 225W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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ES2DA_HF ES2DA_HF Diodes Incorporated ES2DA-ES2JA_LS.pdf Description: DIODE STANDARD 200V 2A SMA
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
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ES2D_HF ES2D_HF Diodes Incorporated ds14002.pdf Description: DIODE STANDARD 200V 2A SMB
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SMB
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
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BFS17NQTA BFS17NQTA Diodes Incorporated ds32160.pdf Description: RF TRANS NPN 11V 3.2GHZ SOT-23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 310mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 11V
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 10V
Frequency - Transition: 3.2GHz
Supplier Device Package: SOT-23-3
Produkt ist nicht verfügbar
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BFS17NQTA BFS17NQTA Diodes Incorporated ds32160.pdf Description: RF TRANS NPN 11V 3.2GHZ SOT-23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 310mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 11V
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 10V
Frequency - Transition: 3.2GHz
Supplier Device Package: SOT-23-3
Produkt ist nicht verfügbar
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MBR10100CTP MBR10100CTP Diodes Incorporated MBR10100CTP.pdf Description: DIODE ARR SCHOTT 100V 5A ITO220S
Packaging: Tube
Package / Case: TO-220-3 Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: ITO-220S
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 5 A
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
Produkt ist nicht verfügbar
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DMP3035SFG-7 DMP3035SFG-7 Diodes Incorporated DMP3035SFG.pdf Description: MOSFET P-CH 30V 8.5A PWRDI3333-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 8A, 10V
Power Dissipation (Max): 950mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI3333-8
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1633 pF @ 15 V
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DMP3035SFG-7 DMP3035SFG-7 Diodes Incorporated DMP3035SFG.pdf Description: MOSFET P-CH 30V 8.5A PWRDI3333-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 8A, 10V
Power Dissipation (Max): 950mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI3333-8
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1633 pF @ 15 V
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MBR1060 MBR1060 Diodes Incorporated ds23009.pdf Description: DIODE SCHOTTKY 60V 10A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 400pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
Produkt ist nicht verfügbar
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1.5KE350CA-B 1.5KE350CA-B Diodes Incorporated ds21503.pdf Description: TVS DIODE 300VWM 482VC DO201
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 4A
Voltage - Reverse Standoff (Typ): 300V
Supplier Device Package: DO-201
Bidirectional Channels: 1
Voltage - Breakdown (Min): 332V
Voltage - Clamping (Max) @ Ipp: 482V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Produkt ist nicht verfügbar
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1N4148WSQ-13-F 1N4148WSQ-13-F Diodes Incorporated 1N4148WS_BAV16WS.pdf Description: DIODE STANDARD 75V 150MA SOD323
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 150mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 1 µA @ 75 V
Qualification: AEC-Q101
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FMC500001Q FMC500001Q Diodes Incorporated FM_2-5V.pdf Description: XTAL OSC XO 125.0000MHZ CMOS SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.081" L x 0.063" W (2.05mm x 1.60mm)
Mounting Type: Surface Mount
Output: CMOS
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.5V
Frequency: 125 MHz
Base Resonator: Crystal
Produkt ist nicht verfügbar
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PI6ULS5V9515AZEEX PI6ULS5V9515AZEEX Diodes Incorporated PI6ULS5V9515A.pdf Description: IC REDRIVER I2C 1CH 400KHZ 8TDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-WFDFN Exposed Pad
Delay Time: 113ns
Number of Channels: 2
Mounting Type: Surface Mount
Output: 2-Wire Bus
Type: Buffer, ReDriver
Input: 2-Wire Bus
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.3V ~ 3.6V
Applications: I2C
Current - Supply: 1.7mA
Data Rate (Max): 400kHz
Supplier Device Package: 8-TDFN (2x3)
Capacitance - Input: 6 pF
Produkt ist nicht verfügbar
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PI6ULS5V9515AZEEX PI6ULS5V9515AZEEX Diodes Incorporated PI6ULS5V9515A.pdf Description: IC REDRIVER I2C 1CH 400KHZ 8TDFN
Packaging: Cut Tape (CT)
Package / Case: 8-WFDFN Exposed Pad
Delay Time: 113ns
Number of Channels: 2
Mounting Type: Surface Mount
Output: 2-Wire Bus
Type: Buffer, ReDriver
Input: 2-Wire Bus
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.3V ~ 3.6V
Applications: I2C
Current - Supply: 1.7mA
Data Rate (Max): 400kHz
Supplier Device Package: 8-TDFN (2x3)
Capacitance - Input: 6 pF
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PI6ULS5V9517BZEEX PI6ULS5V9517BZEEX Diodes Incorporated PI6ULS5V9517B.pdf Description: INTERFACE ULS W-DFN2030-8
Packaging: Tape & Reel (TR)
Package / Case: 8-WFDFN Exposed Pad
Delay Time: 169ns
Number of Channels: 2
Mounting Type: Surface Mount
Output: 2-Wire Bus
Type: Buffer, ReDriver
Input: 2-Wire Bus
Voltage - Supply: 0.8V ~ 5.5V
Applications: I2C
Current - Supply: 500µA
Data Rate (Max): 400kHz
Supplier Device Package: 8-TDFN (2x3)
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PI3DBV10ZEEX PI3DBV10ZEEX Diodes Incorporated PI3DBV10.pdf Description: IC VIDEO SWITCH 2X1 12TDFN
Packaging: Tape & Reel (TR)
Package / Case: 12-WFDFN Exposed Pad
Mounting Type: Surface Mount
Applications: Video
On-State Resistance (Max): 8Ohm
-3db Bandwidth: 500MHz
Supplier Device Package: 12-TDFN (3.5x3)
Voltage - Supply, Single (V+): 3V ~ 3.6V
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Number of Channels: 1
Produkt ist nicht verfügbar
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SDM1M40LP8Q-7 SDM1M40LP8Q-7 Diodes Incorporated SDM1M40LP8Q.pdf Description: DIODE SCHOTTKY 40V 1A UDFN16082
Packaging: Tape & Reel (TR)
Package / Case: 2-UFDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 8.4 ns
Technology: Schottky
Capacitance @ Vr, F: 25pF @ 5V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: U-DFN1608-2
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 660 mV @ 1 A
Current - Reverse Leakage @ Vr: 20 µA @ 40 V
Qualification: AEC-Q101
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SDM1M40LP8Q-7 SDM1M40LP8Q-7 Diodes Incorporated SDM1M40LP8Q.pdf Description: DIODE SCHOTTKY 40V 1A UDFN16082
Packaging: Cut Tape (CT)
Package / Case: 2-UFDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 8.4 ns
Technology: Schottky
Capacitance @ Vr, F: 25pF @ 5V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: U-DFN1608-2
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 660 mV @ 1 A
Current - Reverse Leakage @ Vr: 20 µA @ 40 V
Qualification: AEC-Q101
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D50V0S1U2LP1608-7 D50V0S1U2LP1608-7 Diodes Incorporated D12V0S1U2LP1608-D50V0S1U2LP1608.pdf Description: TVS DIODE 50VWM 90VC UDFN16082
Packaging: Cut Tape (CT)
Package / Case: 2-UFDFN
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 126pF @ 1MHz
Current - Peak Pulse (10/1000µs): 15A
Voltage - Reverse Standoff (Typ): 50V
Supplier Device Package: U-DFN1608-2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 56V
Voltage - Clamping (Max) @ Ipp: 90V
Power Line Protection: No
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SBR1M100BLP-7 SBR1M100BLP-7 Diodes Incorporated SBR1M100BLP.pdf Description: BRIDGE RECT 1P 100V 1A DFN3030
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerUDFN
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Super Barrier
Supplier Device Package: U-DFN3030-4
Grade: Automotive
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 820 mV @ 1 A
Current - Reverse Leakage @ Vr: 25 µA @ 100 V
Qualification: AEC-Q101
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SBR1M100BLP-7 SBR1M100BLP-7 Diodes Incorporated SBR1M100BLP.pdf Description: BRIDGE RECT 1P 100V 1A DFN3030
Packaging: Cut Tape (CT)
Package / Case: 4-PowerUDFN
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Super Barrier
Supplier Device Package: U-DFN3030-4
Grade: Automotive
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 820 mV @ 1 A
Current - Reverse Leakage @ Vr: 25 µA @ 100 V
Qualification: AEC-Q101
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1.5KE82A-B 1.5KE82A-B Diodes Incorporated ds21503.pdf Description: TVS DIODE 70.1VWM 113VC DO201
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 13.3A
Voltage - Reverse Standoff (Typ): 70.1V
Supplier Device Package: DO-201
Unidirectional Channels: 1
Voltage - Breakdown (Min): 77.9V
Voltage - Clamping (Max) @ Ipp: 113V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
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DSC06A065LP-13 DSC06A065LP-13 Diodes Incorporated Description: SIC SBD 650V~1000V T-DFN8080-5 T
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 295pF @ 100mV, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: DFN8080
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 6 A
Current - Reverse Leakage @ Vr: 20 µA @ 650 V
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DSC06A065LP-13 DSC06A065LP-13 Diodes Incorporated Description: SIC SBD 650V~1000V T-DFN8080-5 T
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 295pF @ 100mV, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: DFN8080
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 6 A
Current - Reverse Leakage @ Vr: 20 µA @ 650 V
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P6KE250A-B P6KE250A-B Diodes Incorporated ds21502.pdf Description: TVS DIODE 214VWM 344VC DO15
Packaging: Bulk
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 1.75A
Voltage - Reverse Standoff (Typ): 214V
Supplier Device Package: DO-15
Unidirectional Channels: 1
Voltage - Breakdown (Min): 237V
Voltage - Clamping (Max) @ Ipp: 344V
Power - Peak Pulse: 600W
Power Line Protection: No
Produkt ist nicht verfügbar
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B250AE-13 B250AE-13 Diodes Incorporated B250%28A%2CB%29E%2C%20B260%28A%2CB%29E.pdf Description: DIODE SCHOTTKY 50V 2A SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 75pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 2 A
Current - Reverse Leakage @ Vr: 100 µA @ 50 V
Produkt ist nicht verfügbar
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FL2500094 FL2500094 Diodes Incorporated FL.pdf Description: CRYSTAL 25.0000MHZ 8PF SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Load Capacitance: 8pF
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Type: MHz Crystal
Operating Temperature: -20°C ~ 70°C
Frequency Stability: ±10ppm
Frequency Tolerance: ±10ppm
Operating Mode: Fundamental
Supplier Device Package: 4-SMD (3.2x2.5)
Height - Seated (Max): 0.031" (0.78mm)
ESR (Equivalent Series Resistance): 60 Ohms
Frequency: 25 MHz
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FL2500094 FL2500094 Diodes Incorporated FL.pdf Description: CRYSTAL 25.0000MHZ 8PF SMD
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, No Lead
Load Capacitance: 8pF
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Type: MHz Crystal
Operating Temperature: -20°C ~ 70°C
Frequency Stability: ±10ppm
Frequency Tolerance: ±10ppm
Operating Mode: Fundamental
Supplier Device Package: 4-SMD (3.2x2.5)
Height - Seated (Max): 0.031" (0.78mm)
ESR (Equivalent Series Resistance): 60 Ohms
Frequency: 25 MHz
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FZT956QTA FZT956QTA Diodes Incorporated FZT956.pdf Description: TRANS PNP 200V 2A SOT-223-3
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 275mV @ 400mA, 2A
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 5V
Frequency - Transition: 110MHz
Supplier Device Package: SOT-223-3
Grade: Automotive
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 200 V
Power - Max: 1.6 W
Qualification: AEC-Q101
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HBS410-13 HBS410-13 Diodes Incorporated HBS410.pdf Description: BRIDGE RECT 1PHASE 1KV 4A HBS
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: HBS
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
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HBS410-13 HBS410-13 Diodes Incorporated HBS410.pdf Description: BRIDGE RECT 1PHASE 1KV 4A HBS
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: HBS
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
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HBS610-13 HBS610-13 Diodes Incorporated HBS610.pdf Description: BRIDGE RECT 1PHASE 1KV 6A HBS
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: HBS
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 960 mV @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
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HBS610-13 HBS610-13 Diodes Incorporated HBS610.pdf Description: BRIDGE RECT 1PHASE 1KV 6A HBS
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: HBS
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 960 mV @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
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DMT6017LFDF-7 DMT6017LFDF-7 Diodes Incorporated DMT6017LFDF.pdf Description: MOSFET N-CH 65V 8.1A 6UDFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.1A (Ta)
Rds On (Max) @ Id, Vgs: 18mOhm @ 6A, 10V
Power Dissipation (Max): 800mW (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 65 V
Gate Charge (Qg) (Max) @ Vgs: 15.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 891 pF @ 30 V
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DMT6013LSS-13 DMT6013LSS-13 Diodes Incorporated DMT6013LSS.pdf Description: MOSFET N-CH 60V 10A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 14.3mOhm @ 10A, 10V
Power Dissipation (Max): 1.4W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1081 pF @ 30 V
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DMTH8004LPS-13 DMTH8004LPS.pdf
DMTH8004LPS-13
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 61V~100V POWERDI50
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 20A, 10V
Power Dissipation (Max): 1.5W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Supplier Device Package: PowerDI5060-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4979 pF @ 40 V
Produkt ist nicht verfügbar
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DMTH8003SPSWQ-13 DMTH8003SPSWQ.pdf
DMTH8003SPSWQ-13
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 61V~100V POWERDI50
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 105A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 30A, 10V
Power Dissipation (Max): 3.75W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type UX)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 136 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9081 pF @ 40 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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DMTH8003SPSW-13 DMTH8003SPSW.pdf
DMTH8003SPSW-13
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 61V~100V POWERDI50
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 105A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 30A, 10V
Power Dissipation (Max): 3.75W (Ta), 99W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type UX)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 136 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9081 pF @ 40 V
Produkt ist nicht verfügbar
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DMTH8003STLW-13 DMTH8003STLW.pdf
DMTH8003STLW-13
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 61V~100V POWERDI10
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 173A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 30A, 10V
Power Dissipation (Max): 5.6W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: POWERDI1012-8
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8191 pF @ 40 V
Produkt ist nicht verfügbar
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DMTH8003STLWQ-13 DMTH8003STLWQ.pdf
DMTH8003STLWQ-13
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 61V~100V POWERDI10
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 173A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 30A, 10V
Power Dissipation (Max): 5.6W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: POWERDI1012-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8191 pF @ 40 V
Qualification: AEC-Q101
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Anzahl Preis
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DMTH8001STLW-13 DMTH8001STLW.pdf
DMTH8001STLW-13
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 61V~100V POWERDI10
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 270A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 30A, 10V
Power Dissipation (Max): 6W (Ta), 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: POWERDI1012-8
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 138 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8894 pF @ 50 V
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1500+4.1 EUR
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DF08M ds21201.pdf
DF08M
Hersteller: Diodes Incorporated
Description: BRIDGE RECT 1PHASE 800V 1A DFM
Packaging: Tube
Package / Case: 4-EDIP (0.300", 7.62mm)
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DFM
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
auf Bestellung 54002 Stücke:
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17+1.07 EUR
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MMSZ5241BS-7 ds31038.pdf
MMSZ5241BS-7
Hersteller: Diodes Incorporated
Description: DIODE ZENER 11V 200MW SOD323
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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DMP68D1LQ-7 DMP68D1LQ.pdf
DMP68D1LQ-7
Hersteller: Diodes Incorporated
Description: 2N7002 FAMILY SOT23 T&R 3K
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 206mA (Ta)
Rds On (Max) @ Id, Vgs: 7.5Ohm @ 100mA, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: SOT-23-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 42 pF @ 30 V
Qualification: AEC-Q101
auf Bestellung 156000 Stücke:
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77+0.23 EUR
113+0.16 EUR
130+0.14 EUR
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2N7002EQ-7-F 2N7002EQ.pdf
2N7002EQ-7-F
Hersteller: Diodes Incorporated
Description: 2N7002 FAMILY SOT23 T&R 3K
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 292mA (Ta)
Rds On (Max) @ Id, Vgs: 3Ohm @ 250mA, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 35 pF @ 30 V
Qualification: AEC-Q101
auf Bestellung 60000 Stücke:
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Anzahl Preis
42+0.42 EUR
70+0.25 EUR
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DMN62D2UQ-7 DMN62D2UQ.pdf
DMN62D2UQ-7
Hersteller: Diodes Incorporated
Description: 2N7002 FAMILY SOT23 T&R 3K
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 390mA (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 41 pF @ 30 V
Qualification: AEC-Q101
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Anzahl Preis
31+0.58 EUR
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500+0.14 EUR
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DMN62D2UQ-7 DMN62D2UQ.pdf
DMN62D2UQ-7
Hersteller: Diodes Incorporated
Description: 2N7002 FAMILY SOT23 T&R 3K
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 390mA (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 41 pF @ 30 V
Qualification: AEC-Q101
auf Bestellung 129000 Stücke:
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Anzahl Preis
31+0.58 EUR
47+0.38 EUR
100+0.22 EUR
500+0.14 EUR
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DMN62D1SFBW-7B DMN62D1SFBW.pdf
Hersteller: Diodes Incorporated
Description: 2N7002 FAMILY X2-DFN1006-3 T&R
Packaging: Tape & Reel (TR)
Package / Case: 3-UFDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 528mA (Ta)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 40mA, 10V
Power Dissipation (Max): 500µW (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: U-DFN1006-3/SWP (Type UX)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 43 pF @ 40 V
Produkt ist nicht verfügbar
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DMN62D1SFBWQ-7B DMN62D1SFBWQ.pdf
Hersteller: Diodes Incorporated
Description: 2N7002 FAMILY X2-DFN1006-3 T&R
Packaging: Tape & Reel (TR)
Package / Case: 3-UFDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 538mA (Ta)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 40mA, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: U-DFN1006-3/SWP (Type UX)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 43 pF @ 40 V
Qualification: AEC-Q101
auf Bestellung 980000 Stücke:
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10000+0.071 EUR
20000+0.065 EUR
30000+0.061 EUR
50000+0.058 EUR
70000+0.056 EUR
100000+0.053 EUR
250000+0.051 EUR
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DMTH6016LSD-13 DMTH6016LSD.pdf
DMTH6016LSD-13
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 7.6A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C: 7.6A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 864pF @ 30V
Rds On (Max) @ Id, Vgs: 19.5mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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DMTH6016LSD-13 DMTH6016LSD.pdf
DMTH6016LSD-13
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 7.6A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C: 7.6A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 864pF @ 30V
Rds On (Max) @ Id, Vgs: 19.5mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1097 Stücke:
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9+2.13 EUR
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100+0.89 EUR
500+0.7 EUR
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MBR745 ds23007.pdf
MBR745
Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 45V 7.5A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 400pF @ 4V, 1MHz
Current - Average Rectified (Io): 7.5A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 15 A
Current - Reverse Leakage @ Vr: 100 µA @ 45 V
Produkt ist nicht verfügbar
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BZX84C7V5Q-7-F ds18001.pdf
BZX84C7V5Q-7-F
Hersteller: Diodes Incorporated
Description: DIODE ZENER 7.5V 300MW SOT23
Tolerance: ±6%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 7.5 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOT-23-3
Grade: Automotive
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 1 µA @ 5 V
Qualification: AEC-Q101
auf Bestellung 51000 Stücke:
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63+0.28 EUR
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150+0.12 EUR
500+0.075 EUR
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BZX84C7V5Q-7-F ds18001.pdf
BZX84C7V5Q-7-F
Hersteller: Diodes Incorporated
Description: DIODE ZENER 7.5V 300MW SOT23
Tolerance: ±6%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 7.5 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOT-23-3
Grade: Automotive
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 1 µA @ 5 V
Qualification: AEC-Q101
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63+0.28 EUR
95+0.19 EUR
150+0.12 EUR
500+0.075 EUR
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ZXTD718MCTA ZXTD718MC.pdf
ZXTD718MCTA
Hersteller: Diodes Incorporated
Description: TRANS 2PNP 20V 3.5A W-DFN3020-8
Packaging: Tape & Reel (TR)
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.7W
Current - Collector (Ic) (Max): 3.5A
Voltage - Collector Emitter Breakdown (Max): 20V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 350mA, 3.5A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 2V
Frequency - Transition: 150MHz
Supplier Device Package: W-DFN3020-8
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3000+0.48 EUR
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ZXTD718MCTA ZXTD718MC.pdf
ZXTD718MCTA
Hersteller: Diodes Incorporated
Description: TRANS 2PNP 20V 3.5A W-DFN3020-8
Packaging: Cut Tape (CT)
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.7W
Current - Collector (Ic) (Max): 3.5A
Voltage - Collector Emitter Breakdown (Max): 20V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 350mA, 3.5A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 2V
Frequency - Transition: 150MHz
Supplier Device Package: W-DFN3020-8
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10+1.88 EUR
15+1.18 EUR
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500+0.61 EUR
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DFLS240LX-7
DFLS240LX-7
Hersteller: Diodes Incorporated
Description: DIODE SCHOTTK 40V 2A POWERDI 123
Packaging: Cut Tape (CT)
Package / Case: POWERDI®123
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 250pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: PowerDI™ 123
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
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112+0.16 EUR
162+0.11 EUR
187+0.094 EUR
222+0.079 EUR
250+0.072 EUR
500+0.068 EUR
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DFLZ11Q-7 DFLZxxQ.pdf
DFLZ11Q-7
Hersteller: Diodes Incorporated
Description: DIODE ZENER 11V 1W POWERDI 123
Packaging: Cut Tape (CT)
Tolerance: ±5.45%
Package / Case: POWERDI®123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 11 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: PowerDI™ 123
Grade: Automotive
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 4 µA @ 8.2 V
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
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19+0.93 EUR
31+0.58 EUR
100+0.37 EUR
500+0.28 EUR
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DFLZ27Q-7 DFLZxxQ.pdf
DFLZ27Q-7
Hersteller: Diodes Incorporated
Description: DIODE ZENER 27V 1W POWERDI 123
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: POWERDI®123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 3 Ohms
Supplier Device Package: PowerDI™ 123
Grade: Automotive
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 20 V
Qualification: AEC-Q101
auf Bestellung 15000 Stücke:
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Anzahl Preis
3000+0.2 EUR
9000+0.19 EUR
15000+0.18 EUR
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DFLZ27Q-7 DFLZxxQ.pdf
DFLZ27Q-7
Hersteller: Diodes Incorporated
Description: DIODE ZENER 27V 1W POWERDI 123
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: POWERDI®123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 3 Ohms
Supplier Device Package: PowerDI™ 123
Grade: Automotive
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 20 V
Qualification: AEC-Q101
auf Bestellung 17797 Stücke:
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18+1.02 EUR
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500+0.3 EUR
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DFLT36AQ-7 DFLT5V0AQ-DFLT40AQ.pdf
DFLT36AQ-7
Hersteller: Diodes Incorporated
Description: TVS DIODE 36VWM 58.1VC PWRDI 123
Packaging: Cut Tape (CT)
Package / Case: POWERDI®123
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 3.87A
Voltage - Reverse Standoff (Typ): 36V
Supplier Device Package: PowerDI™ 123
Unidirectional Channels: 1
Voltage - Breakdown (Min): 40V
Voltage - Clamping (Max) @ Ipp: 58.1V
Power - Peak Pulse: 225W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2883 Stücke:
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15+1.2 EUR
24+0.74 EUR
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500+0.37 EUR
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ES2DA_HF ES2DA-ES2JA_LS.pdf
ES2DA_HF
Hersteller: Diodes Incorporated
Description: DIODE STANDARD 200V 2A SMA
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
auf Bestellung 189985 Stücke:
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67+0.26 EUR
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ES2D_HF ds14002.pdf
ES2D_HF
Hersteller: Diodes Incorporated
Description: DIODE STANDARD 200V 2A SMB
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SMB
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
auf Bestellung 7077000 Stücke:
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63+0.28 EUR
89+0.2 EUR
100+0.18 EUR
118+0.15 EUR
250+0.14 EUR
500+0.13 EUR
1000+0.12 EUR
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BFS17NQTA ds32160.pdf
BFS17NQTA
Hersteller: Diodes Incorporated
Description: RF TRANS NPN 11V 3.2GHZ SOT-23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 310mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 11V
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 10V
Frequency - Transition: 3.2GHz
Supplier Device Package: SOT-23-3
Produkt ist nicht verfügbar
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BFS17NQTA ds32160.pdf
BFS17NQTA
Hersteller: Diodes Incorporated
Description: RF TRANS NPN 11V 3.2GHZ SOT-23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 310mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 11V
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 10V
Frequency - Transition: 3.2GHz
Supplier Device Package: SOT-23-3
Produkt ist nicht verfügbar
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MBR10100CTP MBR10100CTP.pdf
MBR10100CTP
Hersteller: Diodes Incorporated
Description: DIODE ARR SCHOTT 100V 5A ITO220S
Packaging: Tube
Package / Case: TO-220-3 Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: ITO-220S
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 5 A
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
Produkt ist nicht verfügbar
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DMP3035SFG-7 DMP3035SFG.pdf
DMP3035SFG-7
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 30V 8.5A PWRDI3333-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 8A, 10V
Power Dissipation (Max): 950mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI3333-8
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1633 pF @ 15 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2000+0.25 EUR
Mindestbestellmenge: 2000
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DMP3035SFG-7 DMP3035SFG.pdf
DMP3035SFG-7
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 30V 8.5A PWRDI3333-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 8A, 10V
Power Dissipation (Max): 950mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI3333-8
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1633 pF @ 15 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
15+1.23 EUR
23+0.77 EUR
100+0.49 EUR
500+0.38 EUR
1000+0.34 EUR
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MBR1060 ds23009.pdf
MBR1060
Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 60V 10A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 400pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
Produkt ist nicht verfügbar
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1.5KE350CA-B ds21503.pdf
1.5KE350CA-B
Hersteller: Diodes Incorporated
Description: TVS DIODE 300VWM 482VC DO201
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 4A
Voltage - Reverse Standoff (Typ): 300V
Supplier Device Package: DO-201
Bidirectional Channels: 1
Voltage - Breakdown (Min): 332V
Voltage - Clamping (Max) @ Ipp: 482V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Produkt ist nicht verfügbar
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1N4148WSQ-13-F 1N4148WS_BAV16WS.pdf
1N4148WSQ-13-F
Hersteller: Diodes Incorporated
Description: DIODE STANDARD 75V 150MA SOD323
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 150mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 1 µA @ 75 V
Qualification: AEC-Q101
auf Bestellung 3349990 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
77+0.23 EUR
129+0.14 EUR
217+0.081 EUR
500+0.059 EUR
1000+0.051 EUR
2000+0.046 EUR
5000+0.039 EUR
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FMC500001Q FM_2-5V.pdf
FMC500001Q
Hersteller: Diodes Incorporated
Description: XTAL OSC XO 125.0000MHZ CMOS SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.081" L x 0.063" W (2.05mm x 1.60mm)
Mounting Type: Surface Mount
Output: CMOS
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.5V
Frequency: 125 MHz
Base Resonator: Crystal
Produkt ist nicht verfügbar
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PI6ULS5V9515AZEEX PI6ULS5V9515A.pdf
PI6ULS5V9515AZEEX
Hersteller: Diodes Incorporated
Description: IC REDRIVER I2C 1CH 400KHZ 8TDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-WFDFN Exposed Pad
Delay Time: 113ns
Number of Channels: 2
Mounting Type: Surface Mount
Output: 2-Wire Bus
Type: Buffer, ReDriver
Input: 2-Wire Bus
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.3V ~ 3.6V
Applications: I2C
Current - Supply: 1.7mA
Data Rate (Max): 400kHz
Supplier Device Package: 8-TDFN (2x3)
Capacitance - Input: 6 pF
Produkt ist nicht verfügbar
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PI6ULS5V9515AZEEX PI6ULS5V9515A.pdf
PI6ULS5V9515AZEEX
Hersteller: Diodes Incorporated
Description: IC REDRIVER I2C 1CH 400KHZ 8TDFN
Packaging: Cut Tape (CT)
Package / Case: 8-WFDFN Exposed Pad
Delay Time: 113ns
Number of Channels: 2
Mounting Type: Surface Mount
Output: 2-Wire Bus
Type: Buffer, ReDriver
Input: 2-Wire Bus
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.3V ~ 3.6V
Applications: I2C
Current - Supply: 1.7mA
Data Rate (Max): 400kHz
Supplier Device Package: 8-TDFN (2x3)
Capacitance - Input: 6 pF
auf Bestellung 1578 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+1.76 EUR
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PI6ULS5V9517BZEEX PI6ULS5V9517B.pdf
PI6ULS5V9517BZEEX
Hersteller: Diodes Incorporated
Description: INTERFACE ULS W-DFN2030-8
Packaging: Tape & Reel (TR)
Package / Case: 8-WFDFN Exposed Pad
Delay Time: 169ns
Number of Channels: 2
Mounting Type: Surface Mount
Output: 2-Wire Bus
Type: Buffer, ReDriver
Input: 2-Wire Bus
Voltage - Supply: 0.8V ~ 5.5V
Applications: I2C
Current - Supply: 500µA
Data Rate (Max): 400kHz
Supplier Device Package: 8-TDFN (2x3)
Produkt ist nicht verfügbar
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PI3DBV10ZEEX PI3DBV10.pdf
PI3DBV10ZEEX
Hersteller: Diodes Incorporated
Description: IC VIDEO SWITCH 2X1 12TDFN
Packaging: Tape & Reel (TR)
Package / Case: 12-WFDFN Exposed Pad
Mounting Type: Surface Mount
Applications: Video
On-State Resistance (Max): 8Ohm
-3db Bandwidth: 500MHz
Supplier Device Package: 12-TDFN (3.5x3)
Voltage - Supply, Single (V+): 3V ~ 3.6V
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Number of Channels: 1
Produkt ist nicht verfügbar
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SDM1M40LP8Q-7 SDM1M40LP8Q.pdf
SDM1M40LP8Q-7
Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 40V 1A UDFN16082
Packaging: Tape & Reel (TR)
Package / Case: 2-UFDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 8.4 ns
Technology: Schottky
Capacitance @ Vr, F: 25pF @ 5V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: U-DFN1608-2
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 660 mV @ 1 A
Current - Reverse Leakage @ Vr: 20 µA @ 40 V
Qualification: AEC-Q101
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SDM1M40LP8Q-7 SDM1M40LP8Q.pdf
SDM1M40LP8Q-7
Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 40V 1A UDFN16082
Packaging: Cut Tape (CT)
Package / Case: 2-UFDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 8.4 ns
Technology: Schottky
Capacitance @ Vr, F: 25pF @ 5V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: U-DFN1608-2
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 660 mV @ 1 A
Current - Reverse Leakage @ Vr: 20 µA @ 40 V
Qualification: AEC-Q101
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D50V0S1U2LP1608-7 D12V0S1U2LP1608-D50V0S1U2LP1608.pdf
D50V0S1U2LP1608-7
Hersteller: Diodes Incorporated
Description: TVS DIODE 50VWM 90VC UDFN16082
Packaging: Cut Tape (CT)
Package / Case: 2-UFDFN
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 126pF @ 1MHz
Current - Peak Pulse (10/1000µs): 15A
Voltage - Reverse Standoff (Typ): 50V
Supplier Device Package: U-DFN1608-2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 56V
Voltage - Clamping (Max) @ Ipp: 90V
Power Line Protection: No
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32+0.56 EUR
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117+0.15 EUR
500+0.14 EUR
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SBR1M100BLP-7 SBR1M100BLP.pdf
SBR1M100BLP-7
Hersteller: Diodes Incorporated
Description: BRIDGE RECT 1P 100V 1A DFN3030
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerUDFN
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Super Barrier
Supplier Device Package: U-DFN3030-4
Grade: Automotive
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 820 mV @ 1 A
Current - Reverse Leakage @ Vr: 25 µA @ 100 V
Qualification: AEC-Q101
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SBR1M100BLP-7 SBR1M100BLP.pdf
SBR1M100BLP-7
Hersteller: Diodes Incorporated
Description: BRIDGE RECT 1P 100V 1A DFN3030
Packaging: Cut Tape (CT)
Package / Case: 4-PowerUDFN
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Super Barrier
Supplier Device Package: U-DFN3030-4
Grade: Automotive
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 820 mV @ 1 A
Current - Reverse Leakage @ Vr: 25 µA @ 100 V
Qualification: AEC-Q101
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1.5KE82A-B ds21503.pdf
1.5KE82A-B
Hersteller: Diodes Incorporated
Description: TVS DIODE 70.1VWM 113VC DO201
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 13.3A
Voltage - Reverse Standoff (Typ): 70.1V
Supplier Device Package: DO-201
Unidirectional Channels: 1
Voltage - Breakdown (Min): 77.9V
Voltage - Clamping (Max) @ Ipp: 113V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
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DSC06A065LP-13
DSC06A065LP-13
Hersteller: Diodes Incorporated
Description: SIC SBD 650V~1000V T-DFN8080-5 T
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 295pF @ 100mV, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: DFN8080
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 6 A
Current - Reverse Leakage @ Vr: 20 µA @ 650 V
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DSC06A065LP-13
DSC06A065LP-13
Hersteller: Diodes Incorporated
Description: SIC SBD 650V~1000V T-DFN8080-5 T
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 295pF @ 100mV, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: DFN8080
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 6 A
Current - Reverse Leakage @ Vr: 20 µA @ 650 V
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P6KE250A-B ds21502.pdf
P6KE250A-B
Hersteller: Diodes Incorporated
Description: TVS DIODE 214VWM 344VC DO15
Packaging: Bulk
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 1.75A
Voltage - Reverse Standoff (Typ): 214V
Supplier Device Package: DO-15
Unidirectional Channels: 1
Voltage - Breakdown (Min): 237V
Voltage - Clamping (Max) @ Ipp: 344V
Power - Peak Pulse: 600W
Power Line Protection: No
Produkt ist nicht verfügbar
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B250AE-13 B250%28A%2CB%29E%2C%20B260%28A%2CB%29E.pdf
B250AE-13
Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 50V 2A SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 75pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 2 A
Current - Reverse Leakage @ Vr: 100 µA @ 50 V
Produkt ist nicht verfügbar
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FL2500094 FL.pdf
FL2500094
Hersteller: Diodes Incorporated
Description: CRYSTAL 25.0000MHZ 8PF SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Load Capacitance: 8pF
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Type: MHz Crystal
Operating Temperature: -20°C ~ 70°C
Frequency Stability: ±10ppm
Frequency Tolerance: ±10ppm
Operating Mode: Fundamental
Supplier Device Package: 4-SMD (3.2x2.5)
Height - Seated (Max): 0.031" (0.78mm)
ESR (Equivalent Series Resistance): 60 Ohms
Frequency: 25 MHz
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FL2500094 FL.pdf
FL2500094
Hersteller: Diodes Incorporated
Description: CRYSTAL 25.0000MHZ 8PF SMD
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, No Lead
Load Capacitance: 8pF
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Type: MHz Crystal
Operating Temperature: -20°C ~ 70°C
Frequency Stability: ±10ppm
Frequency Tolerance: ±10ppm
Operating Mode: Fundamental
Supplier Device Package: 4-SMD (3.2x2.5)
Height - Seated (Max): 0.031" (0.78mm)
ESR (Equivalent Series Resistance): 60 Ohms
Frequency: 25 MHz
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FZT956QTA FZT956.pdf
FZT956QTA
Hersteller: Diodes Incorporated
Description: TRANS PNP 200V 2A SOT-223-3
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 275mV @ 400mA, 2A
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 5V
Frequency - Transition: 110MHz
Supplier Device Package: SOT-223-3
Grade: Automotive
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 200 V
Power - Max: 1.6 W
Qualification: AEC-Q101
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7+2.83 EUR
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HBS410-13 HBS410.pdf
HBS410-13
Hersteller: Diodes Incorporated
Description: BRIDGE RECT 1PHASE 1KV 4A HBS
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: HBS
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
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2500+0.39 EUR
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HBS410-13 HBS410.pdf
HBS410-13
Hersteller: Diodes Incorporated
Description: BRIDGE RECT 1PHASE 1KV 4A HBS
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: HBS
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
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HBS610-13 HBS610.pdf
HBS610-13
Hersteller: Diodes Incorporated
Description: BRIDGE RECT 1PHASE 1KV 6A HBS
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: HBS
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 960 mV @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
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2500+0.44 EUR
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HBS610-13 HBS610.pdf
HBS610-13
Hersteller: Diodes Incorporated
Description: BRIDGE RECT 1PHASE 1KV 6A HBS
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: HBS
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 960 mV @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
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DMT6017LFDF-7 DMT6017LFDF.pdf
DMT6017LFDF-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 65V 8.1A 6UDFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.1A (Ta)
Rds On (Max) @ Id, Vgs: 18mOhm @ 6A, 10V
Power Dissipation (Max): 800mW (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 65 V
Gate Charge (Qg) (Max) @ Vgs: 15.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 891 pF @ 30 V
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15+1.21 EUR
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DMT6013LSS-13 DMT6013LSS.pdf
DMT6013LSS-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 10A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 14.3mOhm @ 10A, 10V
Power Dissipation (Max): 1.4W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1081 pF @ 30 V
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