Produkte > DIODES INCORPORATED > Alle Produkte des Herstellers DIODES INCORPORATED (74604) > Seite 689 nach 1244
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B180BQ-13-F | Diodes Incorporated |
Description: DIODE SCHOTTKY 80V 1A SMBPackaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 80pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: SMB Operating Temperature - Junction: -65°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 80 V Voltage - Forward (Vf) (Max) @ If: 790 mV @ 1 A Current - Reverse Leakage @ Vr: 500 µA @ 80 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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DMC67D8UFDBQ-13 | Diodes Incorporated |
Description: MOSFET N/P-CH 60V/20V 6UDFNPackaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Configuration: N and P-Channel Complementary Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 580mW (Ta) Drain to Source Voltage (Vdss): 60V, 20V Current - Continuous Drain (Id) @ 25°C: 390mA (Ta), 2.9A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 41pF @ 25V, 443pF @ 16V Rds On (Max) @ Id, Vgs: 4Ohm @ 500mA, 10V, 72mOhm @ 3.5A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 0.4nC @ 4.5V, 7.3nC @ 4.5V Vgs(th) (Max) @ Id: 2.5V @ 250µA, 1.25V @ 250µA Supplier Device Package: U-DFN2020-6 (Type B) Grade: Automotive Qualification: AEC-Q101 |
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DMN3032LFDBQ-13 | Diodes Incorporated |
Description: MOSFET 2N-CH 30V 6.2A 6UDFNPackaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 15V Rds On (Max) @ Id, Vgs: 30mOhm @ 5.8A, 10V Gate Charge (Qg) (Max) @ Vgs: 10.6nC @ 10V Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: U-DFN2020-6 (Type B) Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 10000 Stücke: Lieferzeit 10-14 Tag (e) |
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B380BQ-13 | Diodes Incorporated |
Description: ICPackaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 120pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: SMB Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 80 V Voltage - Forward (Vf) (Max) @ If: 790 mV @ 3 A Current - Reverse Leakage @ Vr: 100 µA @ 80 V Qualification: AEC-Q101 |
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B3100BQ-13 | Diodes Incorporated |
Description: ICPackaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 3A Supplier Device Package: SMB Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 790 mV @ 3 A Current - Reverse Leakage @ Vr: 100 µA @ 100 V Qualification: AEC-Q101 |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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SBR440SBQ-13 | Diodes Incorporated |
Description: DIODE SCHOTTKY 40V 4A SMB Packaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 4A Supplier Device Package: SMB Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 500 mV @ 4 A Current - Reverse Leakage @ Vr: 150 µA @ 40 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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DMNH6010SCTBQ-13 | Diodes Incorporated |
Description: MOSFET BVDSS: 41V~60V TO263 T&RPackaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 133A (Tc) Rds On (Max) @ Id, Vgs: 10mOhm @ 25A, 10V Power Dissipation (Max): 5W (Ta), 375W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: TO-263AB (D2PAK) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2692 pF @ 25 V Qualification: AEC-Q101 |
auf Bestellung 7200 Stücke: Lieferzeit 10-14 Tag (e) |
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| AP3795AS7-13 | Diodes Incorporated |
Description: ACDC GEN 4 CONT SO-7 T&R 4K Packaging: Tape & Reel (TR) |
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HX3148003Q | Diodes Incorporated |
Description: CLOCK SAW OSCILLATOR SEAM3225 T& Packaging: Tape & Reel (TR) Type: XO (Standard) Base Resonator: Crystal |
Produkt ist nicht verfügbar |
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AP7375-30W5-7 | Diodes Incorporated |
Description: IC REG LINEAR 3V 300MA SOT-25Packaging: Tape & Reel (TR) Package / Case: SC-74A, SOT-753 Output Type: Fixed Mounting Type: Surface Mount Current - Output: 300mA Operating Temperature: -40°C ~ 125°C (TJ) Output Configuration: Positive Current - Quiescent (Iq): 5 µA Voltage - Input (Max): 45V Number of Regulators: 1 Supplier Device Package: SOT-25 Voltage - Output (Min/Fixed): 3V Control Features: Current Limit, Enable Voltage Dropout (Max): 0.36V @ 100mA Protection Features: Over Current, Over Temperature, Short Circuit |
auf Bestellung 114000 Stücke: Lieferzeit 10-14 Tag (e) |
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AP7375-30W5-7 | Diodes Incorporated |
Description: IC REG LINEAR 3V 300MA SOT-25Packaging: Cut Tape (CT) Package / Case: SC-74A, SOT-753 Output Type: Fixed Mounting Type: Surface Mount Current - Output: 300mA Operating Temperature: -40°C ~ 125°C (TJ) Output Configuration: Positive Current - Quiescent (Iq): 5 µA Voltage - Input (Max): 45V Number of Regulators: 1 Supplier Device Package: SOT-25 Voltage - Output (Min/Fixed): 3V Control Features: Current Limit, Enable Voltage Dropout (Max): 0.36V @ 100mA Protection Features: Over Current, Over Temperature, Short Circuit |
auf Bestellung 116405 Stücke: Lieferzeit 10-14 Tag (e) |
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PD3S120L-7-2477 | Diodes Incorporated |
Description: DIODE SCHOTTK 20V 1A POWERDI 323 Packaging: Bulk Package / Case: PowerDI™ 323 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 46pF @ 10V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: PowerDI™ 323 Operating Temperature - Junction: -65°C ~ 125°C Voltage - DC Reverse (Vr) (Max): 20 V Voltage - Forward (Vf) (Max) @ If: 420 mV @ 1 A Current - Reverse Leakage @ Vr: 160 µA @ 20 V |
Produkt ist nicht verfügbar |
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1.5KE68A-B | Diodes Incorporated |
Description: TVS DIODE 58.1VWM 92VC DO201Packaging: Bulk Package / Case: DO-201AA, DO-27, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 16.3A Voltage - Reverse Standoff (Typ): 58.1V Supplier Device Package: DO-201 Unidirectional Channels: 1 Voltage - Breakdown (Min): 64.6V Voltage - Clamping (Max) @ Ipp: 92V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No |
Produkt ist nicht verfügbar |
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MBRF20100CTL | Diodes Incorporated |
Description: DIODE SCHOTTKY ITO220ABPackaging: Tube |
Produkt ist nicht verfügbar |
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KBP306G | Diodes Incorporated |
Description: BRIDGE RECT 1PHASE 600V 3A KBPPackaging: Tube Package / Case: 4-SIP, KBP Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: KBP Voltage - Peak Reverse (Max): 600 V Current - Average Rectified (Io): 3 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V |
Produkt ist nicht verfügbar |
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PI6CV2304WEX | Diodes Incorporated |
Description: IC CLK BUFFER 1:4 140MHZ 8SOICPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Number of Circuits: 1 Mounting Type: Surface Mount Output: LVCMOS Type: Fanout Buffer (Distribution) Input: CMOS, TTL Operating Temperature: -40°C ~ 85°C Voltage - Supply: 3V ~ 3.6V Ratio - Input:Output: 1:4 Differential - Input:Output: No/No Supplier Device Package: 8-SOIC Frequency - Max: 140 MHz |
auf Bestellung 10000 Stücke: Lieferzeit 10-14 Tag (e) |
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PI6CV2304WEX | Diodes Incorporated |
Description: IC CLK BUFFER 1:4 140MHZ 8SOICPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Number of Circuits: 1 Mounting Type: Surface Mount Output: LVCMOS Type: Fanout Buffer (Distribution) Input: CMOS, TTL Operating Temperature: -40°C ~ 85°C Voltage - Supply: 3V ~ 3.6V Ratio - Input:Output: 1:4 Differential - Input:Output: No/No Supplier Device Package: 8-SOIC Frequency - Max: 140 MHz |
auf Bestellung 11591 Stücke: Lieferzeit 10-14 Tag (e) |
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PI6CV2304LEX | Diodes Incorporated |
Description: IC CLK BUFFER 1:4 140MHZ 8TSSOPPackaging: Tape & Reel (TR) Package / Case: 8-TSSOP (0.173", 4.40mm Width) Number of Circuits: 1 Mounting Type: Surface Mount Output: LVCMOS Type: Fanout Buffer (Distribution) Input: CMOS, TTL Operating Temperature: -40°C ~ 85°C Voltage - Supply: 3V ~ 3.6V Ratio - Input:Output: 1:4 Differential - Input:Output: No/No Supplier Device Package: 8-TSSOP Frequency - Max: 140 MHz |
auf Bestellung 7500 Stücke: Lieferzeit 10-14 Tag (e) |
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PI6CV2304LEX | Diodes Incorporated |
Description: IC CLK BUFFER 1:4 140MHZ 8TSSOPPackaging: Cut Tape (CT) Package / Case: 8-TSSOP (0.173", 4.40mm Width) Number of Circuits: 1 Mounting Type: Surface Mount Output: LVCMOS Type: Fanout Buffer (Distribution) Input: CMOS, TTL Operating Temperature: -40°C ~ 85°C Voltage - Supply: 3V ~ 3.6V Ratio - Input:Output: 1:4 Differential - Input:Output: No/No Supplier Device Package: 8-TSSOP Frequency - Max: 140 MHz |
auf Bestellung 8987 Stücke: Lieferzeit 10-14 Tag (e) |
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DF06S | Diodes Incorporated |
Description: BRIDGE RECT 1PHASE 600V 1A DF-SPackaging: Tube Package / Case: 4-SMD, Gull Wing Mounting Type: Surface Mount Diode Type: Single Phase Operating Temperature: -65°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: DF-S Voltage - Peak Reverse (Max): 600 V Current - Average Rectified (Io): 1 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V |
auf Bestellung 44 Stücke: Lieferzeit 10-14 Tag (e) |
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MBR1060CT | Diodes Incorporated |
Description: DIODE ARR SCHOTT 60V 10A TO2203Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 10A Supplier Device Package: TO-220-3 Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 10 A Current - Reverse Leakage @ Vr: 100 µA @ 60 V |
Produkt ist nicht verfügbar |
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FL1200217Q | Diodes Incorporated |
Description: CRYSTAL 12.0000MHZ 12PF SMDPackaging: Tape & Reel (TR) Package / Case: 4-SMD, No Lead Load Capacitance: 12pF Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm) Mounting Type: Surface Mount Type: MHz Crystal Operating Temperature: -40°C ~ 105°C Frequency Stability: ±20ppm Frequency Tolerance: ±10ppm Operating Mode: Fundamental Supplier Device Package: 4-SMD (3.2x2.5) Height - Seated (Max): 0.031" (0.78mm) ESR (Equivalent Series Resistance): 80 Ohms Frequency: 12 MHz |
Produkt ist nicht verfügbar |
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SMBJ180CAQ-13-F | Diodes Incorporated |
Description: TVS DIODE 180VWM 291.6VC SMBPackaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Current - Peak Pulse (10/1000µs): 2.06A Voltage - Reverse Standoff (Typ): 180V Supplier Device Package: SMB Bidirectional Channels: 1 Voltage - Breakdown (Min): 200V Voltage - Clamping (Max) @ Ipp: 291.6V Power - Peak Pulse: 600W Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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RS5KP5M-13 | Diodes Incorporated |
Description: DIODE STANDARD 800V 5A POWERDI5Packaging: Tape & Reel (TR) Package / Case: PowerDI™ 5 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Technology: Standard Capacitance @ Vr, F: 65pF @ 4V, 1MHz Current - Average Rectified (Io): 5A Supplier Device Package: PowerDI™ 5 Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 5 A Current - Reverse Leakage @ Vr: 10 µA @ 800 V |
auf Bestellung 25000 Stücke: Lieferzeit 10-14 Tag (e) |
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| RS5KP5-13 | Diodes Incorporated |
Description: DIODE Packaging: Bulk |
Produkt ist nicht verfügbar |
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PI3HDX12221BZLDEX | Diodes Incorporated |
Description: ACTIVE HDMI W-QFN3060-40 T&R 3.5Packaging: Tape & Reel (TR) Features: HDMI Package / Case: 40-WFQFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C Applications: Telecommunications Supplier Device Package: 40-TQFN (3x6) Voltage - Supply, Single (V+): 2.97V ~ 3.63V Switch Circuit: SPDT Multiplexer/Demultiplexer Circuit: 2:1 Number of Channels: 4 |
Produkt ist nicht verfügbar |
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PI3HDX12221BZLDEX | Diodes Incorporated |
Description: ACTIVE HDMI W-QFN3060-40 T&R 3.5Packaging: Cut Tape (CT) Features: HDMI Package / Case: 40-WFQFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C Applications: Telecommunications Supplier Device Package: 40-TQFN (3x6) Voltage - Supply, Single (V+): 2.97V ~ 3.63V Switch Circuit: SPDT Multiplexer/Demultiplexer Circuit: 2:1 Number of Channels: 4 |
auf Bestellung 3395 Stücke: Lieferzeit 10-14 Tag (e) |
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GC0350016 | Diodes Incorporated |
Description: CRYSTAL 3.5800MHZ 20PFPackaging: Tape & Reel (TR) Load Capacitance: 20pF Type: MHz Crystal Operating Temperature: -20°C ~ 70°C Frequency Stability: ±30ppm Frequency Tolerance: ±30ppm Operating Mode: Fundamental ESR (Equivalent Series Resistance): 180 Ohms Frequency: 3.58 MHz |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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GC0350016 | Diodes Incorporated |
Description: CRYSTAL 3.5800MHZ 20PFPackaging: Cut Tape (CT) Load Capacitance: 20pF Type: MHz Crystal Operating Temperature: -20°C ~ 70°C Frequency Stability: ±30ppm Frequency Tolerance: ±30ppm Operating Mode: Fundamental ESR (Equivalent Series Resistance): 180 Ohms Frequency: 3.58 MHz |
auf Bestellung 5728 Stücke: Lieferzeit 10-14 Tag (e) |
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DF04S | Diodes Incorporated |
Description: BRIDGE RECT 1PHASE 400V 1A DF-SPackaging: Tube Package / Case: 4-SMD, Gull Wing Mounting Type: Surface Mount Diode Type: Single Phase Operating Temperature: -65°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: DF-S Voltage - Peak Reverse (Max): 400 V Current - Average Rectified (Io): 1 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 10 µA @ 400 V |
auf Bestellung 6046 Stücke: Lieferzeit 10-14 Tag (e) |
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MBR1660 | Diodes Incorporated |
Description: DIODE SCHOTTKY 60V 16A TO220ACPackaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 450pF @ 4V, 1MHz Current - Average Rectified (Io): 16A Supplier Device Package: TO-220AC Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 750 mV @ 16 A Current - Reverse Leakage @ Vr: 1 mA @ 60 V |
Produkt ist nicht verfügbar |
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AP7372-12CBA6-7 | Diodes Incorporated |
Description: LDO LOW VOLTAGE STANDARD U-WLB10Packaging: Tape & Reel (TR) Package / Case: 6-UFBGA, WLBGA Output Type: Adjustable Mounting Type: Surface Mount Current - Output: 200mA Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: Positive Current - Quiescent (Iq): 110 µA Voltage - Input (Max): 20V Number of Regulators: 1 Supplier Device Package: U-WLB1012-6 (Type A1) Voltage - Output (Max): 19.72V Voltage - Output (Min/Fixed): 1.2V Control Features: Enable, Soft Start PSRR: 90dB ~ 52dB (10kHz ~ 1MHz) Voltage Dropout (Max): 0.28V @ 200mA Protection Features: Over Current, Over Temperature, Short Circuit Current - Supply (Max): 500 µA |
auf Bestellung 15000 Stücke: Lieferzeit 10-14 Tag (e) |
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AP7372-12CBA6-7 | Diodes Incorporated |
Description: LDO LOW VOLTAGE STANDARD U-WLB10Packaging: Cut Tape (CT) Package / Case: 6-UFBGA, WLBGA Output Type: Adjustable Mounting Type: Surface Mount Current - Output: 200mA Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: Positive Current - Quiescent (Iq): 110 µA Voltage - Input (Max): 20V Number of Regulators: 1 Supplier Device Package: U-WLB1012-6 (Type A1) Voltage - Output (Max): 19.72V Voltage - Output (Min/Fixed): 1.2V Control Features: Enable, Soft Start PSRR: 90dB ~ 52dB (10kHz ~ 1MHz) Voltage Dropout (Max): 0.28V @ 200mA Protection Features: Over Current, Over Temperature, Short Circuit Current - Supply (Max): 500 µA |
auf Bestellung 15000 Stücke: Lieferzeit 10-14 Tag (e) |
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AP7372-18CBA6-7 | Diodes Incorporated |
Description: LDO LOW VOLTAGE STANDARD U-WLB10Packaging: Tape & Reel (TR) Package / Case: 6-UFBGA, WLBGA Output Type: Fixed Mounting Type: Surface Mount Current - Output: 200mA Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: Positive Current - Quiescent (Iq): 110 µA Voltage - Input (Max): 20V Number of Regulators: 1 Supplier Device Package: U-WLB1012-6 (Type A1) Voltage - Output (Min/Fixed): 1.8V Control Features: Enable, Soft Start PSRR: 90dB ~ 52dB (10kHz ~ 1MHz) Voltage Dropout (Max): 0.28V @ 200mA Protection Features: Over Current, Over Temperature, Short Circuit Current - Supply (Max): 500 µA |
auf Bestellung 18000 Stücke: Lieferzeit 10-14 Tag (e) |
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AP7372-18CBA6-7 | Diodes Incorporated |
Description: LDO LOW VOLTAGE STANDARD U-WLB10Packaging: Cut Tape (CT) Package / Case: 6-UFBGA, WLBGA Output Type: Fixed Mounting Type: Surface Mount Current - Output: 200mA Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: Positive Current - Quiescent (Iq): 110 µA Voltage - Input (Max): 20V Number of Regulators: 1 Supplier Device Package: U-WLB1012-6 (Type A1) Voltage - Output (Min/Fixed): 1.8V Control Features: Enable, Soft Start PSRR: 90dB ~ 52dB (10kHz ~ 1MHz) Voltage Dropout (Max): 0.28V @ 200mA Protection Features: Over Current, Over Temperature, Short Circuit Current - Supply (Max): 500 µA |
auf Bestellung 18000 Stücke: Lieferzeit 10-14 Tag (e) |
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| GBPC2501W | Diodes Incorporated |
Description: BRIDGE RECT 1P 100V 25A GBPC-WPackaging: Tray Package / Case: 4-Square, GBPC-W Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -65°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBPC-W Voltage - Peak Reverse (Max): 100 V Current - Average Rectified (Io): 25 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12.5 A Current - Reverse Leakage @ Vr: 5 µA @ 100 V |
Produkt ist nicht verfügbar |
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PI4MSD5V9548AZDEX-13R | Diodes Incorporated |
Description: IC BUS SWITCH 2 X 1:8 24-TQFNPackaging: Tape & Reel (TR) Package / Case: 24-VFQFN Exposed Pad Mounting Type: Surface Mount Circuit: 2 x 1:8 Type: Bus Switch Operating Temperature: -40°C ~ 85°C Voltage - Supply: 1.65V ~ 5.5V Independent Circuits: 1 Current - Output High, Low: -, 6mA Voltage Supply Source: Single Supply Supplier Device Package: 24-TQFN (4x4) |
Produkt ist nicht verfügbar |
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DRTR5V0U2SOQ-7 | Diodes Incorporated |
Description: ICPackaging: Tape & Reel (TR) Package / Case: SOT-23-6 Mounting Type: Surface Mount Type: Steering (Rail to Rail) Operating Temperature: -55°C ~ 150°C (TJ) Applications: DVI, HDMI, USB Capacitance @ Frequency: 1pF @ 1MHz Current - Peak Pulse (10/1000µs): 6A (8/20µs) Voltage - Reverse Standoff (Typ): 5.5V (Max) Supplier Device Package: SOT-26 Unidirectional Channels: 2 Voltage - Breakdown (Min): 6V Voltage - Clamping (Max) @ Ipp: 19V Power Line Protection: Yes Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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GB2500036 | Diodes Incorporated |
Description: CRYSTAL 25.0000MHZ 18PFPackaging: Tape & Reel (TR) Load Capacitance: 18pF Type: MHz Crystal Operating Temperature: -20°C ~ 70°C Frequency Stability: ±30ppm Frequency Tolerance: ±30ppm Operating Mode: Fundamental ESR (Equivalent Series Resistance): 40 Ohms Frequency: 25 MHz |
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MMBZ5222B-7-F | Diodes Incorporated |
Description: DIODE ZENER 2.5V 350MW SOT23-3Packaging: Tape & Reel (TR) Tolerance: ±5% Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 2.5 V Impedance (Max) (Zzt): 30 Ohms Supplier Device Package: SOT-23-3 Power - Max: 350 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 100 µA @ 1 V |
auf Bestellung 93000 Stücke: Lieferzeit 10-14 Tag (e) |
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MMBZ5222B-7-F | Diodes Incorporated |
Description: DIODE ZENER 2.5V 350MW SOT23-3Packaging: Cut Tape (CT) Tolerance: ±5% Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 2.5 V Impedance (Max) (Zzt): 30 Ohms Supplier Device Package: SOT-23-3 Power - Max: 350 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 100 µA @ 1 V |
auf Bestellung 94598 Stücke: Lieferzeit 10-14 Tag (e) |
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ZDM4306NTA | Diodes Incorporated |
Description: MOSFET 2N-CH 60V 2A SOT-223-8Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
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DPC817S-B-TR | Diodes Incorporated |
Description: OPTOISOLATOR 5KV 1CH TRANS 4-SMDPackaging: Cut Tape (CT) Package / Case: 4-SMD, Gull Wing Output Type: Transistor Mounting Type: Surface Mount Operating Temperature: -55°C ~ 110°C Voltage - Forward (Vf) (Typ): 1.25V Input Type: DC Current - Output / Channel: 50mA Voltage - Isolation: 5000Vrms Current Transfer Ratio (Min): 130% @ 5mA Vce Saturation (Max): 200mV Current Transfer Ratio (Max): 260% @ 5mA Supplier Device Package: 4-SMD Voltage - Output (Max): 35V Rise / Fall Time (Typ): 18µs, 18µs (Max) Number of Channels: 1 Current - DC Forward (If) (Max): 60 mA |
auf Bestellung 1740303 Stücke: Lieferzeit 10-14 Tag (e) |
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DPC817S-C-TR | Diodes Incorporated |
Description: OPTOISOLATOR 5KV 1CH TRANS 4-SMDPackaging: Cut Tape (CT) Package / Case: 4-SMD, Gull Wing Output Type: Transistor Mounting Type: Surface Mount Operating Temperature: -55°C ~ 110°C Voltage - Forward (Vf) (Typ): 1.25V Input Type: DC Current - Output / Channel: 50mA Voltage - Isolation: 5000Vrms Current Transfer Ratio (Min): 200% @ 5mA Vce Saturation (Max): 200mV Current Transfer Ratio (Max): 400% @ 5mA Supplier Device Package: 4-SMD Voltage - Output (Max): 35V Rise / Fall Time (Typ): 18µs, 18µs (Max) Number of Channels: 1 Current - DC Forward (If) (Max): 60 mA |
auf Bestellung 2596892 Stücke: Lieferzeit 10-14 Tag (e) |
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UX34F6202Z | Diodes Incorporated |
Description: CLOCK SAW OSCILLATOR SEAM3225 T& Packaging: Tape & Reel (TR) Type: XO (Standard) Base Resonator: Crystal |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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AP9101CK6-CPTRG1 | Diodes Incorporated |
Description: IC BATT PROT LI-ION 1CELL SOT26 Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Number of Cells: 1 Mounting Type: Surface Mount Function: Battery Protection Operating Temperature: -40°C ~ 85°C (TA) Battery Chemistry: Lithium Ion/Polymer Supplier Device Package: SOT-26 Fault Protection: Over Current, Over Voltage |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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DMTH4014LFVWQ-13 | Diodes Incorporated |
Description: MOSFET BVDSS: 31V~40V POWERDI333Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta), 49.8A (Tc) Rds On (Max) @ Id, Vgs: 13.7mOhm @ 20A, 10V Power Dissipation (Max): 3.1W Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI3333-8 (SWP) Type UX Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 11.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 20 V Qualification: AEC-Q101 |
auf Bestellung 9000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMTH4014LFVWQ-13 | Diodes Incorporated |
Description: MOSFET BVDSS: 31V~40V POWERDI333Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta), 49.8A (Tc) Rds On (Max) @ Id, Vgs: 13.7mOhm @ 20A, 10V Power Dissipation (Max): 3.1W Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI3333-8 (SWP) Type UX Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 11.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 20 V Qualification: AEC-Q101 |
auf Bestellung 9000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMTH4014SPSWQ-13 | Diodes Incorporated |
Description: MOSFET BVDSS: 31V~40V POWERDI506Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 43.5A (Tc) Rds On (Max) @ Id, Vgs: 14.8mOhm @ 20A, 10V Power Dissipation (Max): 4W (Ta), 46.9W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerDI5060-8 (Type UX) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 10.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 805 pF @ 20 V Qualification: AEC-Q101 |
auf Bestellung 10000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMTH4014SPSWQ-13 | Diodes Incorporated |
Description: MOSFET BVDSS: 31V~40V POWERDI506Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 43.5A (Tc) Rds On (Max) @ Id, Vgs: 14.8mOhm @ 20A, 10V Power Dissipation (Max): 4W (Ta), 46.9W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerDI5060-8 (Type UX) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 10.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 805 pF @ 20 V Qualification: AEC-Q101 |
auf Bestellung 12360 Stücke: Lieferzeit 10-14 Tag (e) |
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DMTH4014LDVWQ-13 | Diodes Incorporated |
Description: MOSFET 2N-CH 40V 10.2A PWRDI3333Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.16W (Ta) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 10.2A (Ta), 27.5A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 20V Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V Gate Charge (Qg) (Max) @ Vgs: 11.2nC @ 10V Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI3333-8 (Type UXD) Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 219000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMTH4014LDVWQ-13 | Diodes Incorporated |
Description: MOSFET 2N-CH 40V 10.2A PWRDI3333Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.16W (Ta) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 10.2A (Ta), 27.5A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 20V Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V Gate Charge (Qg) (Max) @ Vgs: 11.2nC @ 10V Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI3333-8 (Type UXD) Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 220781 Stücke: Lieferzeit 10-14 Tag (e) |
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DMTH4014LFVW-13 | Diodes Incorporated |
Description: MOSFET BVDSS: 31V~40V POWERDI333Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta), 49.8A (Tc) Rds On (Max) @ Id, Vgs: 13.7mOhm @ 20A, 10V Power Dissipation (Max): 3.1W (Ta), 57.7W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI3333-8 (SWP) Type UX Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 11.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 20 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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DMTH4014LFVW-7 | Diodes Incorporated |
Description: MOSFET BVDSS: 31V~40V POWERDI333Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta), 49.8A (Tc) Rds On (Max) @ Id, Vgs: 13.7mOhm @ 20A, 10V Power Dissipation (Max): 3.1W (Ta), 57.7W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI3333-8 (SWP) Type UX Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 11.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 20 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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DMTH4014SPSW-13 | Diodes Incorporated |
Description: MOSFET BVDSS: 31V~40V POWERDI506Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 43.5A (Tc) Rds On (Max) @ Id, Vgs: 14.8mOhm @ 20A, 10V Power Dissipation (Max): 4W (Ta), 46.9W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerDI5060-8 (Type UX) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 10.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 805 pF @ 20 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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DMTH4014LPSW-13 | Diodes Incorporated |
Description: MOSFET BVDSS: 31V~40V POWERDI506Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 43.5A (Tc) Rds On (Max) @ Id, Vgs: 14.5mOhm @ 20A, 10V Power Dissipation (Max): 4W (Ta), 46.9W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI5060-8 (Type UX) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 11.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 20 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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DMTH4014LDVW-13 | Diodes Incorporated |
Description: MOSFET 2N-CH 40V 10.2A PWRDI3333Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.16W (Ta) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 10.2A (Ta), 27.5A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 20V Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V Gate Charge (Qg) (Max) @ Vgs: 11.2nC @ 10V Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI3333-8 (Type UXD) |
auf Bestellung 24000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMTH4014LPSWQ-13 | Diodes Incorporated |
Description: MOSFET BVDSS: 31V~40V POWERDI506Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 43.5A (Tc) Rds On (Max) @ Id, Vgs: 14.5mOhm @ 20A, 10V Power Dissipation (Max): 4W (Ta), 46.9W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI5060-8 (Type UX) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 11.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 20 V Qualification: AEC-Q101 |
auf Bestellung 10000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMTH4014LDVW-7 | Diodes Incorporated |
Description: MOSFET 2N-CH 40V 10.2A PWRDI3333Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.16W (Ta) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 10.2A (Ta), 27.5A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 20V Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V Gate Charge (Qg) (Max) @ Vgs: 11.2nC @ 10V Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI3333-8 (Type UXD) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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DMTH4014LPDW-13 | Diodes Incorporated |
Description: ICPackaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.4W (Ta), 42.8W (Tc) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 10.6A (Ta), 43.6A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 733pF @ 20V Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V Gate Charge (Qg) (Max) @ Vgs: 10.2nC @ 10V Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI5060-8 (Type UXD) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| B180BQ-13-F |
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Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 80V 1A SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SMB
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 80 V
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 80V 1A SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SMB
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 80 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| DMC67D8UFDBQ-13 |
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Hersteller: Diodes Incorporated
Description: MOSFET N/P-CH 60V/20V 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 580mW (Ta)
Drain to Source Voltage (Vdss): 60V, 20V
Current - Continuous Drain (Id) @ 25°C: 390mA (Ta), 2.9A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 41pF @ 25V, 443pF @ 16V
Rds On (Max) @ Id, Vgs: 4Ohm @ 500mA, 10V, 72mOhm @ 3.5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.4nC @ 4.5V, 7.3nC @ 4.5V
Vgs(th) (Max) @ Id: 2.5V @ 250µA, 1.25V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type B)
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N/P-CH 60V/20V 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 580mW (Ta)
Drain to Source Voltage (Vdss): 60V, 20V
Current - Continuous Drain (Id) @ 25°C: 390mA (Ta), 2.9A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 41pF @ 25V, 443pF @ 16V
Rds On (Max) @ Id, Vgs: 4Ohm @ 500mA, 10V, 72mOhm @ 3.5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.4nC @ 4.5V, 7.3nC @ 4.5V
Vgs(th) (Max) @ Id: 2.5V @ 250µA, 1.25V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type B)
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| DMN3032LFDBQ-13 |
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Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 30V 6.2A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 15V
Rds On (Max) @ Id, Vgs: 30mOhm @ 5.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10.6nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type B)
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET 2N-CH 30V 6.2A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 15V
Rds On (Max) @ Id, Vgs: 30mOhm @ 5.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10.6nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type B)
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 10000+ | 0.25 EUR |
| B380BQ-13 |
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Hersteller: Diodes Incorporated
Description: IC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 120pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: SMB
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 80 V
Qualification: AEC-Q101
Description: IC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 120pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: SMB
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 80 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| B3100BQ-13 |
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Hersteller: Diodes Incorporated
Description: IC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: SMB
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
Qualification: AEC-Q101
Description: IC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: SMB
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 0.33 EUR |
| SBR440SBQ-13 |
Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 40V 4A SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 4A
Supplier Device Package: SMB
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 4 A
Current - Reverse Leakage @ Vr: 150 µA @ 40 V
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 40V 4A SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 4A
Supplier Device Package: SMB
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 4 A
Current - Reverse Leakage @ Vr: 150 µA @ 40 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| DMNH6010SCTBQ-13 |
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Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 41V~60V TO263 T&R
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 133A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 25A, 10V
Power Dissipation (Max): 5W (Ta), 375W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-263AB (D2PAK)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2692 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET BVDSS: 41V~60V TO263 T&R
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 133A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 25A, 10V
Power Dissipation (Max): 5W (Ta), 375W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-263AB (D2PAK)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2692 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 7200 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 800+ | 2.07 EUR |
| 1600+ | 1.98 EUR |
| HX3148003Q |
Hersteller: Diodes Incorporated
Description: CLOCK SAW OSCILLATOR SEAM3225 T&
Packaging: Tape & Reel (TR)
Type: XO (Standard)
Base Resonator: Crystal
Description: CLOCK SAW OSCILLATOR SEAM3225 T&
Packaging: Tape & Reel (TR)
Type: XO (Standard)
Base Resonator: Crystal
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| AP7375-30W5-7 |
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Hersteller: Diodes Incorporated
Description: IC REG LINEAR 3V 300MA SOT-25
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 5 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: SOT-25
Voltage - Output (Min/Fixed): 3V
Control Features: Current Limit, Enable
Voltage Dropout (Max): 0.36V @ 100mA
Protection Features: Over Current, Over Temperature, Short Circuit
Description: IC REG LINEAR 3V 300MA SOT-25
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 5 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: SOT-25
Voltage - Output (Min/Fixed): 3V
Control Features: Current Limit, Enable
Voltage Dropout (Max): 0.36V @ 100mA
Protection Features: Over Current, Over Temperature, Short Circuit
auf Bestellung 114000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 0.23 EUR |
| 6000+ | 0.21 EUR |
| 9000+ | 0.2 EUR |
| 15000+ | 0.18 EUR |
| 30000+ | 0.17 EUR |
| 75000+ | 0.16 EUR |
| AP7375-30W5-7 |
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Hersteller: Diodes Incorporated
Description: IC REG LINEAR 3V 300MA SOT-25
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 5 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: SOT-25
Voltage - Output (Min/Fixed): 3V
Control Features: Current Limit, Enable
Voltage Dropout (Max): 0.36V @ 100mA
Protection Features: Over Current, Over Temperature, Short Circuit
Description: IC REG LINEAR 3V 300MA SOT-25
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 5 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: SOT-25
Voltage - Output (Min/Fixed): 3V
Control Features: Current Limit, Enable
Voltage Dropout (Max): 0.36V @ 100mA
Protection Features: Over Current, Over Temperature, Short Circuit
auf Bestellung 116405 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 17+ | 1.09 EUR |
| 28+ | 0.65 EUR |
| 33+ | 0.54 EUR |
| 100+ | 0.41 EUR |
| 250+ | 0.34 EUR |
| 500+ | 0.3 EUR |
| 1000+ | 0.27 EUR |
| PD3S120L-7-2477 |
Hersteller: Diodes Incorporated
Description: DIODE SCHOTTK 20V 1A POWERDI 323
Packaging: Bulk
Package / Case: PowerDI™ 323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 46pF @ 10V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: PowerDI™ 323
Operating Temperature - Junction: -65°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 420 mV @ 1 A
Current - Reverse Leakage @ Vr: 160 µA @ 20 V
Description: DIODE SCHOTTK 20V 1A POWERDI 323
Packaging: Bulk
Package / Case: PowerDI™ 323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 46pF @ 10V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: PowerDI™ 323
Operating Temperature - Junction: -65°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 420 mV @ 1 A
Current - Reverse Leakage @ Vr: 160 µA @ 20 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 1.5KE68A-B |
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Hersteller: Diodes Incorporated
Description: TVS DIODE 58.1VWM 92VC DO201
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 16.3A
Voltage - Reverse Standoff (Typ): 58.1V
Supplier Device Package: DO-201
Unidirectional Channels: 1
Voltage - Breakdown (Min): 64.6V
Voltage - Clamping (Max) @ Ipp: 92V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Description: TVS DIODE 58.1VWM 92VC DO201
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 16.3A
Voltage - Reverse Standoff (Typ): 58.1V
Supplier Device Package: DO-201
Unidirectional Channels: 1
Voltage - Breakdown (Min): 64.6V
Voltage - Clamping (Max) @ Ipp: 92V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| KBP306G |
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Hersteller: Diodes Incorporated
Description: BRIDGE RECT 1PHASE 600V 3A KBP
Packaging: Tube
Package / Case: 4-SIP, KBP
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBP
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 3 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Description: BRIDGE RECT 1PHASE 600V 3A KBP
Packaging: Tube
Package / Case: 4-SIP, KBP
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBP
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 3 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| PI6CV2304WEX |
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Hersteller: Diodes Incorporated
Description: IC CLK BUFFER 1:4 140MHZ 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Number of Circuits: 1
Mounting Type: Surface Mount
Output: LVCMOS
Type: Fanout Buffer (Distribution)
Input: CMOS, TTL
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 3.6V
Ratio - Input:Output: 1:4
Differential - Input:Output: No/No
Supplier Device Package: 8-SOIC
Frequency - Max: 140 MHz
Description: IC CLK BUFFER 1:4 140MHZ 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Number of Circuits: 1
Mounting Type: Surface Mount
Output: LVCMOS
Type: Fanout Buffer (Distribution)
Input: CMOS, TTL
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 3.6V
Ratio - Input:Output: 1:4
Differential - Input:Output: No/No
Supplier Device Package: 8-SOIC
Frequency - Max: 140 MHz
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2500+ | 1.01 EUR |
| 5000+ | 0.97 EUR |
| PI6CV2304WEX |
![]() |
Hersteller: Diodes Incorporated
Description: IC CLK BUFFER 1:4 140MHZ 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Number of Circuits: 1
Mounting Type: Surface Mount
Output: LVCMOS
Type: Fanout Buffer (Distribution)
Input: CMOS, TTL
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 3.6V
Ratio - Input:Output: 1:4
Differential - Input:Output: No/No
Supplier Device Package: 8-SOIC
Frequency - Max: 140 MHz
Description: IC CLK BUFFER 1:4 140MHZ 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Number of Circuits: 1
Mounting Type: Surface Mount
Output: LVCMOS
Type: Fanout Buffer (Distribution)
Input: CMOS, TTL
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 3.6V
Ratio - Input:Output: 1:4
Differential - Input:Output: No/No
Supplier Device Package: 8-SOIC
Frequency - Max: 140 MHz
auf Bestellung 11591 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 5+ | 3.73 EUR |
| 10+ | 2.33 EUR |
| 25+ | 1.97 EUR |
| 100+ | 1.56 EUR |
| 250+ | 1.36 EUR |
| 500+ | 1.23 EUR |
| 1000+ | 1.13 EUR |
| PI6CV2304LEX |
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Hersteller: Diodes Incorporated
Description: IC CLK BUFFER 1:4 140MHZ 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Number of Circuits: 1
Mounting Type: Surface Mount
Output: LVCMOS
Type: Fanout Buffer (Distribution)
Input: CMOS, TTL
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 3.6V
Ratio - Input:Output: 1:4
Differential - Input:Output: No/No
Supplier Device Package: 8-TSSOP
Frequency - Max: 140 MHz
Description: IC CLK BUFFER 1:4 140MHZ 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Number of Circuits: 1
Mounting Type: Surface Mount
Output: LVCMOS
Type: Fanout Buffer (Distribution)
Input: CMOS, TTL
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 3.6V
Ratio - Input:Output: 1:4
Differential - Input:Output: No/No
Supplier Device Package: 8-TSSOP
Frequency - Max: 140 MHz
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2500+ | 1 EUR |
| 5000+ | 0.95 EUR |
| PI6CV2304LEX |
![]() |
Hersteller: Diodes Incorporated
Description: IC CLK BUFFER 1:4 140MHZ 8TSSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Number of Circuits: 1
Mounting Type: Surface Mount
Output: LVCMOS
Type: Fanout Buffer (Distribution)
Input: CMOS, TTL
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 3.6V
Ratio - Input:Output: 1:4
Differential - Input:Output: No/No
Supplier Device Package: 8-TSSOP
Frequency - Max: 140 MHz
Description: IC CLK BUFFER 1:4 140MHZ 8TSSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Number of Circuits: 1
Mounting Type: Surface Mount
Output: LVCMOS
Type: Fanout Buffer (Distribution)
Input: CMOS, TTL
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 3.6V
Ratio - Input:Output: 1:4
Differential - Input:Output: No/No
Supplier Device Package: 8-TSSOP
Frequency - Max: 140 MHz
auf Bestellung 8987 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 5+ | 3.68 EUR |
| 10+ | 2.31 EUR |
| 25+ | 1.95 EUR |
| 100+ | 1.54 EUR |
| 250+ | 1.34 EUR |
| 500+ | 1.22 EUR |
| 1000+ | 1.11 EUR |
| DF06S |
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Hersteller: Diodes Incorporated
Description: BRIDGE RECT 1PHASE 600V 1A DF-S
Packaging: Tube
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DF-S
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Description: BRIDGE RECT 1PHASE 600V 1A DF-S
Packaging: Tube
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DF-S
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
auf Bestellung 44 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 8+ | 2.39 EUR |
| MBR1060CT |
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Hersteller: Diodes Incorporated
Description: DIODE ARR SCHOTT 60V 10A TO2203
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
Description: DIODE ARR SCHOTT 60V 10A TO2203
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FL1200217Q |
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Hersteller: Diodes Incorporated
Description: CRYSTAL 12.0000MHZ 12PF SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Load Capacitance: 12pF
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Type: MHz Crystal
Operating Temperature: -40°C ~ 105°C
Frequency Stability: ±20ppm
Frequency Tolerance: ±10ppm
Operating Mode: Fundamental
Supplier Device Package: 4-SMD (3.2x2.5)
Height - Seated (Max): 0.031" (0.78mm)
ESR (Equivalent Series Resistance): 80 Ohms
Frequency: 12 MHz
Description: CRYSTAL 12.0000MHZ 12PF SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Load Capacitance: 12pF
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Type: MHz Crystal
Operating Temperature: -40°C ~ 105°C
Frequency Stability: ±20ppm
Frequency Tolerance: ±10ppm
Operating Mode: Fundamental
Supplier Device Package: 4-SMD (3.2x2.5)
Height - Seated (Max): 0.031" (0.78mm)
ESR (Equivalent Series Resistance): 80 Ohms
Frequency: 12 MHz
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SMBJ180CAQ-13-F |
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Hersteller: Diodes Incorporated
Description: TVS DIODE 180VWM 291.6VC SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 2.06A
Voltage - Reverse Standoff (Typ): 180V
Supplier Device Package: SMB
Bidirectional Channels: 1
Voltage - Breakdown (Min): 200V
Voltage - Clamping (Max) @ Ipp: 291.6V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 180VWM 291.6VC SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 2.06A
Voltage - Reverse Standoff (Typ): 180V
Supplier Device Package: SMB
Bidirectional Channels: 1
Voltage - Breakdown (Min): 200V
Voltage - Clamping (Max) @ Ipp: 291.6V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| RS5KP5M-13 |
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Hersteller: Diodes Incorporated
Description: DIODE STANDARD 800V 5A POWERDI5
Packaging: Tape & Reel (TR)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 65pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Description: DIODE STANDARD 800V 5A POWERDI5
Packaging: Tape & Reel (TR)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 65pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
auf Bestellung 25000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 5000+ | 0.44 EUR |
| 10000+ | 0.41 EUR |
| 15000+ | 0.4 EUR |
| PI3HDX12221BZLDEX |
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Hersteller: Diodes Incorporated
Description: ACTIVE HDMI W-QFN3060-40 T&R 3.5
Packaging: Tape & Reel (TR)
Features: HDMI
Package / Case: 40-WFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Applications: Telecommunications
Supplier Device Package: 40-TQFN (3x6)
Voltage - Supply, Single (V+): 2.97V ~ 3.63V
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Number of Channels: 4
Description: ACTIVE HDMI W-QFN3060-40 T&R 3.5
Packaging: Tape & Reel (TR)
Features: HDMI
Package / Case: 40-WFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Applications: Telecommunications
Supplier Device Package: 40-TQFN (3x6)
Voltage - Supply, Single (V+): 2.97V ~ 3.63V
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Number of Channels: 4
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| PI3HDX12221BZLDEX |
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Hersteller: Diodes Incorporated
Description: ACTIVE HDMI W-QFN3060-40 T&R 3.5
Packaging: Cut Tape (CT)
Features: HDMI
Package / Case: 40-WFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Applications: Telecommunications
Supplier Device Package: 40-TQFN (3x6)
Voltage - Supply, Single (V+): 2.97V ~ 3.63V
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Number of Channels: 4
Description: ACTIVE HDMI W-QFN3060-40 T&R 3.5
Packaging: Cut Tape (CT)
Features: HDMI
Package / Case: 40-WFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Applications: Telecommunications
Supplier Device Package: 40-TQFN (3x6)
Voltage - Supply, Single (V+): 2.97V ~ 3.63V
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Number of Channels: 4
auf Bestellung 3395 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3+ | 8.45 EUR |
| 10+ | 5.51 EUR |
| 25+ | 4.74 EUR |
| 100+ | 3.88 EUR |
| 250+ | 3.45 EUR |
| 500+ | 3.19 EUR |
| 1000+ | 3.04 EUR |
| GC0350016 |
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Hersteller: Diodes Incorporated
Description: CRYSTAL 3.5800MHZ 20PF
Packaging: Tape & Reel (TR)
Load Capacitance: 20pF
Type: MHz Crystal
Operating Temperature: -20°C ~ 70°C
Frequency Stability: ±30ppm
Frequency Tolerance: ±30ppm
Operating Mode: Fundamental
ESR (Equivalent Series Resistance): 180 Ohms
Frequency: 3.58 MHz
Description: CRYSTAL 3.5800MHZ 20PF
Packaging: Tape & Reel (TR)
Load Capacitance: 20pF
Type: MHz Crystal
Operating Temperature: -20°C ~ 70°C
Frequency Stability: ±30ppm
Frequency Tolerance: ±30ppm
Operating Mode: Fundamental
ESR (Equivalent Series Resistance): 180 Ohms
Frequency: 3.58 MHz
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1000+ | 0.45 EUR |
| 2000+ | 0.43 EUR |
| 3000+ | 0.42 EUR |
| 5000+ | 0.4 EUR |
| GC0350016 |
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Hersteller: Diodes Incorporated
Description: CRYSTAL 3.5800MHZ 20PF
Packaging: Cut Tape (CT)
Load Capacitance: 20pF
Type: MHz Crystal
Operating Temperature: -20°C ~ 70°C
Frequency Stability: ±30ppm
Frequency Tolerance: ±30ppm
Operating Mode: Fundamental
ESR (Equivalent Series Resistance): 180 Ohms
Frequency: 3.58 MHz
Description: CRYSTAL 3.5800MHZ 20PF
Packaging: Cut Tape (CT)
Load Capacitance: 20pF
Type: MHz Crystal
Operating Temperature: -20°C ~ 70°C
Frequency Stability: ±30ppm
Frequency Tolerance: ±30ppm
Operating Mode: Fundamental
ESR (Equivalent Series Resistance): 180 Ohms
Frequency: 3.58 MHz
auf Bestellung 5728 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 26+ | 0.69 EUR |
| 30+ | 0.59 EUR |
| 50+ | 0.54 EUR |
| 100+ | 0.51 EUR |
| 500+ | 0.47 EUR |
| DF04S |
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Hersteller: Diodes Incorporated
Description: BRIDGE RECT 1PHASE 400V 1A DF-S
Packaging: Tube
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DF-S
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Description: BRIDGE RECT 1PHASE 400V 1A DF-S
Packaging: Tube
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DF-S
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
auf Bestellung 6046 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 17+ | 1.09 EUR |
| 50+ | 0.49 EUR |
| 100+ | 0.48 EUR |
| 500+ | 0.43 EUR |
| MBR1660 |
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Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 60V 16A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 450pF @ 4V, 1MHz
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 16 A
Current - Reverse Leakage @ Vr: 1 mA @ 60 V
Description: DIODE SCHOTTKY 60V 16A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 450pF @ 4V, 1MHz
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 16 A
Current - Reverse Leakage @ Vr: 1 mA @ 60 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| AP7372-12CBA6-7 |
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Hersteller: Diodes Incorporated
Description: LDO LOW VOLTAGE STANDARD U-WLB10
Packaging: Tape & Reel (TR)
Package / Case: 6-UFBGA, WLBGA
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 110 µA
Voltage - Input (Max): 20V
Number of Regulators: 1
Supplier Device Package: U-WLB1012-6 (Type A1)
Voltage - Output (Max): 19.72V
Voltage - Output (Min/Fixed): 1.2V
Control Features: Enable, Soft Start
PSRR: 90dB ~ 52dB (10kHz ~ 1MHz)
Voltage Dropout (Max): 0.28V @ 200mA
Protection Features: Over Current, Over Temperature, Short Circuit
Current - Supply (Max): 500 µA
Description: LDO LOW VOLTAGE STANDARD U-WLB10
Packaging: Tape & Reel (TR)
Package / Case: 6-UFBGA, WLBGA
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 110 µA
Voltage - Input (Max): 20V
Number of Regulators: 1
Supplier Device Package: U-WLB1012-6 (Type A1)
Voltage - Output (Max): 19.72V
Voltage - Output (Min/Fixed): 1.2V
Control Features: Enable, Soft Start
PSRR: 90dB ~ 52dB (10kHz ~ 1MHz)
Voltage Dropout (Max): 0.28V @ 200mA
Protection Features: Over Current, Over Temperature, Short Circuit
Current - Supply (Max): 500 µA
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 0.45 EUR |
| 6000+ | 0.44 EUR |
| 9000+ | 0.43 EUR |
| AP7372-12CBA6-7 |
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Hersteller: Diodes Incorporated
Description: LDO LOW VOLTAGE STANDARD U-WLB10
Packaging: Cut Tape (CT)
Package / Case: 6-UFBGA, WLBGA
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 110 µA
Voltage - Input (Max): 20V
Number of Regulators: 1
Supplier Device Package: U-WLB1012-6 (Type A1)
Voltage - Output (Max): 19.72V
Voltage - Output (Min/Fixed): 1.2V
Control Features: Enable, Soft Start
PSRR: 90dB ~ 52dB (10kHz ~ 1MHz)
Voltage Dropout (Max): 0.28V @ 200mA
Protection Features: Over Current, Over Temperature, Short Circuit
Current - Supply (Max): 500 µA
Description: LDO LOW VOLTAGE STANDARD U-WLB10
Packaging: Cut Tape (CT)
Package / Case: 6-UFBGA, WLBGA
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 110 µA
Voltage - Input (Max): 20V
Number of Regulators: 1
Supplier Device Package: U-WLB1012-6 (Type A1)
Voltage - Output (Max): 19.72V
Voltage - Output (Min/Fixed): 1.2V
Control Features: Enable, Soft Start
PSRR: 90dB ~ 52dB (10kHz ~ 1MHz)
Voltage Dropout (Max): 0.28V @ 200mA
Protection Features: Over Current, Over Temperature, Short Circuit
Current - Supply (Max): 500 µA
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 18+ | 1 EUR |
| 25+ | 0.71 EUR |
| 28+ | 0.64 EUR |
| 100+ | 0.56 EUR |
| 250+ | 0.52 EUR |
| 500+ | 0.49 EUR |
| 1000+ | 0.47 EUR |
| AP7372-18CBA6-7 |
![]() |
Hersteller: Diodes Incorporated
Description: LDO LOW VOLTAGE STANDARD U-WLB10
Packaging: Tape & Reel (TR)
Package / Case: 6-UFBGA, WLBGA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 110 µA
Voltage - Input (Max): 20V
Number of Regulators: 1
Supplier Device Package: U-WLB1012-6 (Type A1)
Voltage - Output (Min/Fixed): 1.8V
Control Features: Enable, Soft Start
PSRR: 90dB ~ 52dB (10kHz ~ 1MHz)
Voltage Dropout (Max): 0.28V @ 200mA
Protection Features: Over Current, Over Temperature, Short Circuit
Current - Supply (Max): 500 µA
Description: LDO LOW VOLTAGE STANDARD U-WLB10
Packaging: Tape & Reel (TR)
Package / Case: 6-UFBGA, WLBGA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 110 µA
Voltage - Input (Max): 20V
Number of Regulators: 1
Supplier Device Package: U-WLB1012-6 (Type A1)
Voltage - Output (Min/Fixed): 1.8V
Control Features: Enable, Soft Start
PSRR: 90dB ~ 52dB (10kHz ~ 1MHz)
Voltage Dropout (Max): 0.28V @ 200mA
Protection Features: Over Current, Over Temperature, Short Circuit
Current - Supply (Max): 500 µA
auf Bestellung 18000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 0.45 EUR |
| 6000+ | 0.44 EUR |
| 9000+ | 0.43 EUR |
| AP7372-18CBA6-7 |
![]() |
Hersteller: Diodes Incorporated
Description: LDO LOW VOLTAGE STANDARD U-WLB10
Packaging: Cut Tape (CT)
Package / Case: 6-UFBGA, WLBGA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 110 µA
Voltage - Input (Max): 20V
Number of Regulators: 1
Supplier Device Package: U-WLB1012-6 (Type A1)
Voltage - Output (Min/Fixed): 1.8V
Control Features: Enable, Soft Start
PSRR: 90dB ~ 52dB (10kHz ~ 1MHz)
Voltage Dropout (Max): 0.28V @ 200mA
Protection Features: Over Current, Over Temperature, Short Circuit
Current - Supply (Max): 500 µA
Description: LDO LOW VOLTAGE STANDARD U-WLB10
Packaging: Cut Tape (CT)
Package / Case: 6-UFBGA, WLBGA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 110 µA
Voltage - Input (Max): 20V
Number of Regulators: 1
Supplier Device Package: U-WLB1012-6 (Type A1)
Voltage - Output (Min/Fixed): 1.8V
Control Features: Enable, Soft Start
PSRR: 90dB ~ 52dB (10kHz ~ 1MHz)
Voltage Dropout (Max): 0.28V @ 200mA
Protection Features: Over Current, Over Temperature, Short Circuit
Current - Supply (Max): 500 µA
auf Bestellung 18000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 18+ | 0.99 EUR |
| 25+ | 0.7 EUR |
| 28+ | 0.63 EUR |
| 100+ | 0.55 EUR |
| 250+ | 0.51 EUR |
| 500+ | 0.49 EUR |
| 1000+ | 0.47 EUR |
| GBPC2501W |
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Hersteller: Diodes Incorporated
Description: BRIDGE RECT 1P 100V 25A GBPC-W
Packaging: Tray
Package / Case: 4-Square, GBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-W
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Description: BRIDGE RECT 1P 100V 25A GBPC-W
Packaging: Tray
Package / Case: 4-Square, GBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-W
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| PI4MSD5V9548AZDEX-13R |
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Hersteller: Diodes Incorporated
Description: IC BUS SWITCH 2 X 1:8 24-TQFN
Packaging: Tape & Reel (TR)
Package / Case: 24-VFQFN Exposed Pad
Mounting Type: Surface Mount
Circuit: 2 x 1:8
Type: Bus Switch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 5.5V
Independent Circuits: 1
Current - Output High, Low: -, 6mA
Voltage Supply Source: Single Supply
Supplier Device Package: 24-TQFN (4x4)
Description: IC BUS SWITCH 2 X 1:8 24-TQFN
Packaging: Tape & Reel (TR)
Package / Case: 24-VFQFN Exposed Pad
Mounting Type: Surface Mount
Circuit: 2 x 1:8
Type: Bus Switch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 5.5V
Independent Circuits: 1
Current - Output High, Low: -, 6mA
Voltage Supply Source: Single Supply
Supplier Device Package: 24-TQFN (4x4)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| DRTR5V0U2SOQ-7 |
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Hersteller: Diodes Incorporated
Description: IC
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: DVI, HDMI, USB
Capacitance @ Frequency: 1pF @ 1MHz
Current - Peak Pulse (10/1000µs): 6A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: SOT-26
Unidirectional Channels: 2
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 19V
Power Line Protection: Yes
Grade: Automotive
Qualification: AEC-Q101
Description: IC
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: DVI, HDMI, USB
Capacitance @ Frequency: 1pF @ 1MHz
Current - Peak Pulse (10/1000µs): 6A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: SOT-26
Unidirectional Channels: 2
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 19V
Power Line Protection: Yes
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| GB2500036 |
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Hersteller: Diodes Incorporated
Description: CRYSTAL 25.0000MHZ 18PF
Packaging: Tape & Reel (TR)
Load Capacitance: 18pF
Type: MHz Crystal
Operating Temperature: -20°C ~ 70°C
Frequency Stability: ±30ppm
Frequency Tolerance: ±30ppm
Operating Mode: Fundamental
ESR (Equivalent Series Resistance): 40 Ohms
Frequency: 25 MHz
Description: CRYSTAL 25.0000MHZ 18PF
Packaging: Tape & Reel (TR)
Load Capacitance: 18pF
Type: MHz Crystal
Operating Temperature: -20°C ~ 70°C
Frequency Stability: ±30ppm
Frequency Tolerance: ±30ppm
Operating Mode: Fundamental
ESR (Equivalent Series Resistance): 40 Ohms
Frequency: 25 MHz
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MMBZ5222B-7-F |
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Hersteller: Diodes Incorporated
Description: DIODE ZENER 2.5V 350MW SOT23-3
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 2.5 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: SOT-23-3
Power - Max: 350 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 µA @ 1 V
Description: DIODE ZENER 2.5V 350MW SOT23-3
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 2.5 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: SOT-23-3
Power - Max: 350 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 µA @ 1 V
auf Bestellung 93000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 0.042 EUR |
| MMBZ5222B-7-F |
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Hersteller: Diodes Incorporated
Description: DIODE ZENER 2.5V 350MW SOT23-3
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 2.5 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: SOT-23-3
Power - Max: 350 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 µA @ 1 V
Description: DIODE ZENER 2.5V 350MW SOT23-3
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 2.5 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: SOT-23-3
Power - Max: 350 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 µA @ 1 V
auf Bestellung 94598 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 112+ | 0.16 EUR |
| 182+ | 0.097 EUR |
| 393+ | 0.045 EUR |
| 500+ | 0.044 EUR |
| 1000+ | 0.043 EUR |
| ZDM4306NTA |
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Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 60V 2A SOT-223-8
Packaging: Tape & Reel (TR)
Description: MOSFET 2N-CH 60V 2A SOT-223-8
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| DPC817S-B-TR |
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Hersteller: Diodes Incorporated
Description: OPTOISOLATOR 5KV 1CH TRANS 4-SMD
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 130% @ 5mA
Vce Saturation (Max): 200mV
Current Transfer Ratio (Max): 260% @ 5mA
Supplier Device Package: 4-SMD
Voltage - Output (Max): 35V
Rise / Fall Time (Typ): 18µs, 18µs (Max)
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
Description: OPTOISOLATOR 5KV 1CH TRANS 4-SMD
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 130% @ 5mA
Vce Saturation (Max): 200mV
Current Transfer Ratio (Max): 260% @ 5mA
Supplier Device Package: 4-SMD
Voltage - Output (Max): 35V
Rise / Fall Time (Typ): 18µs, 18µs (Max)
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
auf Bestellung 1740303 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 63+ | 0.28 EUR |
| 93+ | 0.19 EUR |
| 133+ | 0.13 EUR |
| 500+ | 0.11 EUR |
| 1000+ | 0.097 EUR |
| DPC817S-C-TR |
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Hersteller: Diodes Incorporated
Description: OPTOISOLATOR 5KV 1CH TRANS 4-SMD
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 200% @ 5mA
Vce Saturation (Max): 200mV
Current Transfer Ratio (Max): 400% @ 5mA
Supplier Device Package: 4-SMD
Voltage - Output (Max): 35V
Rise / Fall Time (Typ): 18µs, 18µs (Max)
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
Description: OPTOISOLATOR 5KV 1CH TRANS 4-SMD
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 200% @ 5mA
Vce Saturation (Max): 200mV
Current Transfer Ratio (Max): 400% @ 5mA
Supplier Device Package: 4-SMD
Voltage - Output (Max): 35V
Rise / Fall Time (Typ): 18µs, 18µs (Max)
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
auf Bestellung 2596892 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 63+ | 0.28 EUR |
| 93+ | 0.19 EUR |
| 133+ | 0.13 EUR |
| 500+ | 0.11 EUR |
| 1000+ | 0.097 EUR |
| UX34F6202Z |
Hersteller: Diodes Incorporated
Description: CLOCK SAW OSCILLATOR SEAM3225 T&
Packaging: Tape & Reel (TR)
Type: XO (Standard)
Base Resonator: Crystal
Description: CLOCK SAW OSCILLATOR SEAM3225 T&
Packaging: Tape & Reel (TR)
Type: XO (Standard)
Base Resonator: Crystal
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| AP9101CK6-CPTRG1 |
Hersteller: Diodes Incorporated
Description: IC BATT PROT LI-ION 1CELL SOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Number of Cells: 1
Mounting Type: Surface Mount
Function: Battery Protection
Operating Temperature: -40°C ~ 85°C (TA)
Battery Chemistry: Lithium Ion/Polymer
Supplier Device Package: SOT-26
Fault Protection: Over Current, Over Voltage
Description: IC BATT PROT LI-ION 1CELL SOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Number of Cells: 1
Mounting Type: Surface Mount
Function: Battery Protection
Operating Temperature: -40°C ~ 85°C (TA)
Battery Chemistry: Lithium Ion/Polymer
Supplier Device Package: SOT-26
Fault Protection: Over Current, Over Voltage
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| DMTH4014LFVWQ-13 |
![]() |
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 31V~40V POWERDI333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta), 49.8A (Tc)
Rds On (Max) @ Id, Vgs: 13.7mOhm @ 20A, 10V
Power Dissipation (Max): 3.1W
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 11.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 20 V
Qualification: AEC-Q101
Description: MOSFET BVDSS: 31V~40V POWERDI333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta), 49.8A (Tc)
Rds On (Max) @ Id, Vgs: 13.7mOhm @ 20A, 10V
Power Dissipation (Max): 3.1W
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 11.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 0.31 EUR |
| 6000+ | 0.3 EUR |
| 9000+ | 0.29 EUR |
| DMTH4014LFVWQ-13 |
![]() |
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 31V~40V POWERDI333
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta), 49.8A (Tc)
Rds On (Max) @ Id, Vgs: 13.7mOhm @ 20A, 10V
Power Dissipation (Max): 3.1W
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 11.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 20 V
Qualification: AEC-Q101
Description: MOSFET BVDSS: 31V~40V POWERDI333
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta), 49.8A (Tc)
Rds On (Max) @ Id, Vgs: 13.7mOhm @ 20A, 10V
Power Dissipation (Max): 3.1W
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 11.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 13+ | 1.41 EUR |
| 21+ | 0.88 EUR |
| 100+ | 0.58 EUR |
| 500+ | 0.45 EUR |
| 1000+ | 0.41 EUR |
| DMTH4014SPSWQ-13 |
![]() |
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 31V~40V POWERDI506
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43.5A (Tc)
Rds On (Max) @ Id, Vgs: 14.8mOhm @ 20A, 10V
Power Dissipation (Max): 4W (Ta), 46.9W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type UX)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 10.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 805 pF @ 20 V
Qualification: AEC-Q101
Description: MOSFET BVDSS: 31V~40V POWERDI506
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43.5A (Tc)
Rds On (Max) @ Id, Vgs: 14.8mOhm @ 20A, 10V
Power Dissipation (Max): 4W (Ta), 46.9W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type UX)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 10.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 805 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2500+ | 0.39 EUR |
| 5000+ | 0.36 EUR |
| 7500+ | 0.35 EUR |
| DMTH4014SPSWQ-13 |
![]() |
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 31V~40V POWERDI506
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43.5A (Tc)
Rds On (Max) @ Id, Vgs: 14.8mOhm @ 20A, 10V
Power Dissipation (Max): 4W (Ta), 46.9W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type UX)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 10.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 805 pF @ 20 V
Qualification: AEC-Q101
Description: MOSFET BVDSS: 31V~40V POWERDI506
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43.5A (Tc)
Rds On (Max) @ Id, Vgs: 14.8mOhm @ 20A, 10V
Power Dissipation (Max): 4W (Ta), 46.9W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type UX)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 10.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 805 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 12360 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 11+ | 1.6 EUR |
| 18+ | 1 EUR |
| 100+ | 0.66 EUR |
| 500+ | 0.51 EUR |
| 1000+ | 0.46 EUR |
| DMTH4014LDVWQ-13 |
![]() |
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 40V 10.2A PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.16W (Ta)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 10.2A (Ta), 27.5A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 20V
Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11.2nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8 (Type UXD)
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET 2N-CH 40V 10.2A PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.16W (Ta)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 10.2A (Ta), 27.5A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 20V
Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11.2nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8 (Type UXD)
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 219000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 0.43 EUR |
| 6000+ | 0.39 EUR |
| 9000+ | 0.38 EUR |
| 15000+ | 0.37 EUR |
| DMTH4014LDVWQ-13 |
![]() |
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 40V 10.2A PWRDI3333
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.16W (Ta)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 10.2A (Ta), 27.5A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 20V
Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11.2nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8 (Type UXD)
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET 2N-CH 40V 10.2A PWRDI3333
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.16W (Ta)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 10.2A (Ta), 27.5A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 20V
Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11.2nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8 (Type UXD)
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 220781 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 11+ | 1.74 EUR |
| 17+ | 1.1 EUR |
| 100+ | 0.72 EUR |
| 500+ | 0.56 EUR |
| 1000+ | 0.51 EUR |
| DMTH4014LFVW-13 |
![]() |
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 31V~40V POWERDI333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta), 49.8A (Tc)
Rds On (Max) @ Id, Vgs: 13.7mOhm @ 20A, 10V
Power Dissipation (Max): 3.1W (Ta), 57.7W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 11.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 20 V
Description: MOSFET BVDSS: 31V~40V POWERDI333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta), 49.8A (Tc)
Rds On (Max) @ Id, Vgs: 13.7mOhm @ 20A, 10V
Power Dissipation (Max): 3.1W (Ta), 57.7W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 11.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 20 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| DMTH4014LFVW-7 |
![]() |
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 31V~40V POWERDI333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta), 49.8A (Tc)
Rds On (Max) @ Id, Vgs: 13.7mOhm @ 20A, 10V
Power Dissipation (Max): 3.1W (Ta), 57.7W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 11.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 20 V
Description: MOSFET BVDSS: 31V~40V POWERDI333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta), 49.8A (Tc)
Rds On (Max) @ Id, Vgs: 13.7mOhm @ 20A, 10V
Power Dissipation (Max): 3.1W (Ta), 57.7W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 11.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 20 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| DMTH4014SPSW-13 |
![]() |
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 31V~40V POWERDI506
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43.5A (Tc)
Rds On (Max) @ Id, Vgs: 14.8mOhm @ 20A, 10V
Power Dissipation (Max): 4W (Ta), 46.9W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type UX)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 10.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 805 pF @ 20 V
Description: MOSFET BVDSS: 31V~40V POWERDI506
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43.5A (Tc)
Rds On (Max) @ Id, Vgs: 14.8mOhm @ 20A, 10V
Power Dissipation (Max): 4W (Ta), 46.9W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type UX)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 10.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 805 pF @ 20 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| DMTH4014LPSW-13 |
![]() |
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 31V~40V POWERDI506
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43.5A (Tc)
Rds On (Max) @ Id, Vgs: 14.5mOhm @ 20A, 10V
Power Dissipation (Max): 4W (Ta), 46.9W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type UX)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 11.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 20 V
Description: MOSFET BVDSS: 31V~40V POWERDI506
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43.5A (Tc)
Rds On (Max) @ Id, Vgs: 14.5mOhm @ 20A, 10V
Power Dissipation (Max): 4W (Ta), 46.9W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type UX)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 11.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 20 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| DMTH4014LDVW-13 |
![]() |
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 40V 10.2A PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.16W (Ta)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 10.2A (Ta), 27.5A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 20V
Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11.2nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8 (Type UXD)
Description: MOSFET 2N-CH 40V 10.2A PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.16W (Ta)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 10.2A (Ta), 27.5A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 20V
Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11.2nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8 (Type UXD)
auf Bestellung 24000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 0.38 EUR |
| 6000+ | 0.35 EUR |
| 9000+ | 0.34 EUR |
| 15000+ | 0.32 EUR |
| DMTH4014LPSWQ-13 |
![]() |
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 31V~40V POWERDI506
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43.5A (Tc)
Rds On (Max) @ Id, Vgs: 14.5mOhm @ 20A, 10V
Power Dissipation (Max): 4W (Ta), 46.9W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type UX)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 11.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 20 V
Qualification: AEC-Q101
Description: MOSFET BVDSS: 31V~40V POWERDI506
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43.5A (Tc)
Rds On (Max) @ Id, Vgs: 14.5mOhm @ 20A, 10V
Power Dissipation (Max): 4W (Ta), 46.9W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type UX)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 11.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2500+ | 0.39 EUR |
| 5000+ | 0.36 EUR |
| 7500+ | 0.35 EUR |
| DMTH4014LDVW-7 |
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Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 40V 10.2A PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.16W (Ta)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 10.2A (Ta), 27.5A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 20V
Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11.2nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8 (Type UXD)
Description: MOSFET 2N-CH 40V 10.2A PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.16W (Ta)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 10.2A (Ta), 27.5A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 20V
Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11.2nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8 (Type UXD)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| DMTH4014LPDW-13 |
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Hersteller: Diodes Incorporated
Description: IC
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.4W (Ta), 42.8W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 10.6A (Ta), 43.6A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 733pF @ 20V
Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10.2nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type UXD)
Description: IC
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.4W (Ta), 42.8W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 10.6A (Ta), 43.6A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 733pF @ 20V
Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10.2nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type UXD)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH



























