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DSC06A065LP-13 DSC06A065LP-13 Diodes Incorporated Description: SIC SBD 650V~1000V T-DFN8080-5 T
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 295pF @ 100mV, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: DFN8080
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 6 A
Current - Reverse Leakage @ Vr: 20 µA @ 650 V
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10+4.35 EUR
100+3.08 EUR
500+2.83 EUR
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P6KE250A-B P6KE250A-B Diodes Incorporated ds21502.pdf Description: TVS DIODE 214VWM 344VC DO15
Packaging: Bulk
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 1.75A
Voltage - Reverse Standoff (Typ): 214V
Supplier Device Package: DO-15
Unidirectional Channels: 1
Voltage - Breakdown (Min): 237V
Voltage - Clamping (Max) @ Ipp: 344V
Power - Peak Pulse: 600W
Power Line Protection: No
Produkt ist nicht verfügbar
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B250AE-13 B250AE-13 Diodes Incorporated B250%28A%2CB%29E%2C%20B260%28A%2CB%29E.pdf Description: DIODE SCHOTTKY 50V 2A SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 75pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 2 A
Current - Reverse Leakage @ Vr: 100 µA @ 50 V
Produkt ist nicht verfügbar
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FL2500094 FL2500094 Diodes Incorporated FL.pdf Description: CRYSTAL 25.0000MHZ 8PF SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Load Capacitance: 8pF
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Type: MHz Crystal
Operating Temperature: -20°C ~ 70°C
Frequency Stability: ±10ppm
Frequency Tolerance: ±10ppm
Operating Mode: Fundamental
Supplier Device Package: 4-SMD (3.2x2.5)
Height - Seated (Max): 0.031" (0.78mm)
ESR (Equivalent Series Resistance): 60 Ohms
Frequency: 25 MHz
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FL2500094 FL2500094 Diodes Incorporated FL.pdf Description: CRYSTAL 25.0000MHZ 8PF SMD
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, No Lead
Load Capacitance: 8pF
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Type: MHz Crystal
Operating Temperature: -20°C ~ 70°C
Frequency Stability: ±10ppm
Frequency Tolerance: ±10ppm
Operating Mode: Fundamental
Supplier Device Package: 4-SMD (3.2x2.5)
Height - Seated (Max): 0.031" (0.78mm)
ESR (Equivalent Series Resistance): 60 Ohms
Frequency: 25 MHz
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250+0.61 EUR
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FZT956QTA FZT956QTA Diodes Incorporated FZT956.pdf Description: TRANS PNP 200V 2A SOT-223-3
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 275mV @ 400mA, 2A
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 5V
Frequency - Transition: 110MHz
Supplier Device Package: SOT-223-3
Grade: Automotive
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 200 V
Power - Max: 1.6 W
Qualification: AEC-Q101
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HBS410-13 HBS410-13 Diodes Incorporated HBS410.pdf Description: BRIDGE RECT 1PHASE 1KV 4A HBS
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: HBS
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
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HBS410-13 HBS410-13 Diodes Incorporated HBS410.pdf Description: BRIDGE RECT 1PHASE 1KV 4A HBS
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: HBS
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
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HBS610-13 HBS610-13 Diodes Incorporated HBS610.pdf Description: BRIDGE RECT 1PHASE 1KV 6A HBS
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: HBS
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 960 mV @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
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HBS610-13 HBS610-13 Diodes Incorporated HBS610.pdf Description: BRIDGE RECT 1PHASE 1KV 6A HBS
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: HBS
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 960 mV @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
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DMT6017LFDF-7 DMT6017LFDF-7 Diodes Incorporated DMT6017LFDF.pdf Description: MOSFET N-CH 65V 8.1A 6UDFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.1A (Ta)
Rds On (Max) @ Id, Vgs: 18mOhm @ 6A, 10V
Power Dissipation (Max): 800mW (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 65 V
Gate Charge (Qg) (Max) @ Vgs: 15.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 891 pF @ 30 V
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500+0.37 EUR
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DMT6013LSS-13 DMT6013LSS-13 Diodes Incorporated DMT6013LSS.pdf Description: MOSFET N-CH 60V 10A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 14.3mOhm @ 10A, 10V
Power Dissipation (Max): 1.4W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1081 pF @ 30 V
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DMT6013LSS-13 DMT6013LSS-13 Diodes Incorporated DMT6013LSS.pdf Description: MOSFET N-CH 60V 10A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 14.3mOhm @ 10A, 10V
Power Dissipation (Max): 1.4W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1081 pF @ 30 V
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14+1.27 EUR
23+0.78 EUR
100+0.51 EUR
500+0.39 EUR
1000+0.35 EUR
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DMT6017LDV-7 DMT6017LDV-7 Diodes Incorporated DMT6017LDV.pdf Description: MOSFET 2N-CH 25.3 PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C: 25.3 (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 6A, 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: PowerDI3333-8 (Type UXC)
Produkt ist nicht verfügbar
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DMT6017LDV-7 DMT6017LDV-7 Diodes Incorporated DMT6017LDV.pdf Description: MOSFET 2N-CH 25.3 PWRDI3333
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C: 25.3 (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 6A, 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: PowerDI3333-8 (Type UXC)
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100+0.81 EUR
500+0.63 EUR
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DMT6007LFG-13 DMT6007LFG-13 Diodes Incorporated DMT6007LFG.pdf Description: MOSFET N-CH 60V 15A PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 80A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V
Power Dissipation (Max): 2.2W (Ta), 62.5W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PowerDI3333-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 41.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2090 pF @ 30 V
Produkt ist nicht verfügbar
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DMT6007LFG-13 DMT6007LFG-13 Diodes Incorporated DMT6007LFG.pdf Description: MOSFET N-CH 60V 15A PWRDI3333
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 80A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V
Power Dissipation (Max): 2.2W (Ta), 62.5W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PowerDI3333-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 41.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2090 pF @ 30 V
auf Bestellung 1468 Stücke:
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12+1.52 EUR
100+1.01 EUR
500+0.8 EUR
1000+0.73 EUR
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DMP4016SPSW-13 DMP4016SPSW-13 Diodes Incorporated DMP4016SPSW.pdf Description: MOSFET BVDSS: 31V~40V POWERDI506
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 86A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 9.8A, 10V
Power Dissipation (Max): 3.9W (Ta), 119W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type UX)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5697 pF @ 20 V
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DMP4016SPSWQ-13 DMP4016SPSWQ-13 Diodes Incorporated DMP4016SPSWQ.pdf Description: MOSFET BVDSS: 31V~40V POWERDI506
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 86A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 9.8A, 10V
Power Dissipation (Max): 3.9W (Ta), 119W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type UX)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5697 pF @ 20 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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DMT26M0LDG-7 Diodes Incorporated Description: MOSFET 2N-CH 25V 11.6A PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.24W (Ta)
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 11.6A (Ta), 33.8A (Tc), 20.1A (Ta), 52.6A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1010pF @ 13V, 4016pF @ 13V
Rds On (Max) @ Id, Vgs: 6mOhm @ 13A, 10V, 2mOhm @ 27A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15.9nC @ 10V, 57.4nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA, 2.2V @ 1mA
Supplier Device Package: PowerDI3333-8 (Type F)
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DMT26M0LDG-13 Diodes Incorporated Description: MOSFET 2N-CH 25V 11.6A PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.24W (Ta)
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 11.6A (Ta), 33.8A (Tc), 20.1A (Ta), 52.6A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1010pF @ 13V, 4016pF @ 13V
Rds On (Max) @ Id, Vgs: 6mOhm @ 13A, 10V, 2mOhm @ 27A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15.9nC @ 10V, 57.4nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA, 2.2V @ 1mA
Supplier Device Package: PowerDI3333-8 (Type F)
Produkt ist nicht verfügbar
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DMP3056L-13 DMP3056L-13 Diodes Incorporated DMP3056L.pdf Description: MOSFET P-CH 30V 4.3A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 6A, 10V
Power Dissipation (Max): 1.38W (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 642 pF @ 25 V
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DMP3056L-13 DMP3056L-13 Diodes Incorporated DMP3056L.pdf Description: MOSFET P-CH 30V 4.3A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 6A, 10V
Power Dissipation (Max): 1.38W (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 642 pF @ 25 V
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22+0.83 EUR
35+0.51 EUR
100+0.32 EUR
500+0.24 EUR
1000+0.21 EUR
2000+0.2 EUR
5000+0.17 EUR
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ZXTD2090E6TA ZXTD2090E6TA Diodes Incorporated Description: TRANS 2NPN DUAL 50V 1A SOT-26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.1W
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 270mV @ 50mA, 1A
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 1A, 2V
Frequency - Transition: 215MHz
Supplier Device Package: SOT-26
auf Bestellung 501000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.53 EUR
6000+0.5 EUR
9000+0.48 EUR
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ZXTD2090E6TA ZXTD2090E6TA Diodes Incorporated Description: TRANS 2NPN DUAL 50V 1A SOT-26
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.1W
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 270mV @ 50mA, 1A
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 1A, 2V
Frequency - Transition: 215MHz
Supplier Device Package: SOT-26
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AP22971GD8-7 AP22971GD8-7 Diodes Incorporated AP22971.pdf Description: LOAD SWITCH LOW VOLTAGE X1-WLB19
Features: Load Discharge, Power Good, Slew Rate Controlled
Packaging: Tape & Reel (TR)
Package / Case: 8-XFBGA, WLBGA
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: High Side
Rds On (Typ): 6.7mOhm
Input Type: Non-Inverting
Voltage - Load: 0.65V ~ 3.6V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-WLP (1.88x0.88)
Fault Protection: Over Temperature
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AP22971GD8-7 AP22971GD8-7 Diodes Incorporated AP22971.pdf Description: LOAD SWITCH LOW VOLTAGE X1-WLB19
Features: Load Discharge, Power Good, Slew Rate Controlled
Packaging: Cut Tape (CT)
Package / Case: 8-XFBGA, WLBGA
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: High Side
Rds On (Typ): 6.7mOhm
Input Type: Non-Inverting
Voltage - Load: 0.65V ~ 3.6V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-WLP (1.88x0.88)
Fault Protection: Over Temperature
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PI6CB332004AZLFEX-13R PI6CB332004AZLFEX-13R Diodes Incorporated PI6CB332004A.pdf Description: IC
Packaging: Tape & Reel (TR)
Package / Case: 28-VFQFN Exposed Pad
Number of Circuits: 1
Mounting Type: Surface Mount
Output: HCSL
Type: Fanout Buffer (Distribution)
Input: Clock
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.97V ~ 3.63V
Ratio - Input:Output: 1:4
Differential - Input:Output: Yes/Yes
Supplier Device Package: 28-QFN (4x4)
Frequency - Max: 400 MHz
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PI6CB332004AZLFEX-13R PI6CB332004AZLFEX-13R Diodes Incorporated PI6CB332004A.pdf Description: IC
Packaging: Cut Tape (CT)
Package / Case: 28-VFQFN Exposed Pad
Number of Circuits: 1
Mounting Type: Surface Mount
Output: HCSL
Type: Fanout Buffer (Distribution)
Input: Clock
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.97V ~ 3.63V
Ratio - Input:Output: 1:4
Differential - Input:Output: Yes/Yes
Supplier Device Package: 28-QFN (4x4)
Frequency - Max: 400 MHz
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SPX2940U-L-5-0 SPX2940U-L-5-0 Diodes Incorporated spx2940_ds_rev200_080609.pdf Description: IC REG LINEAR 5V 1A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 1A
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Voltage - Input (Max): 16V
Number of Regulators: 1
Supplier Device Package: TO-220-3
Voltage - Output (Min/Fixed): 5V
Voltage Dropout (Max): 0.28V @ 1A
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit, Transient Voltage
Produkt ist nicht verfügbar
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MMBTA64-7-F-W MMBTA64-7-F-W Diodes Incorporated MMBTA64.pdf Description: GENERAL PURPOSE TRANSISTOR SOT23
Packaging: Tape & Reel (TR)
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MMBTA63-7-F-W MMBTA63-7-F-W Diodes Incorporated MMBTA63.pdf Description: GENERAL PURPOSE TRANSISTOR SOT23
Packaging: Tape & Reel (TR)
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MMBTA63-7-F-W MMBTA63-7-F-W Diodes Incorporated MMBTA63.pdf Description: GENERAL PURPOSE TRANSISTOR SOT23
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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B230BE-13 B230BE-13 Diodes Incorporated B220%28A%2CB%29E%20-%20B245%28A%2CB%29E.pdf Description: DIODE SCHOTTKY 30V 2A SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 93pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SMB
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A
Current - Reverse Leakage @ Vr: 100 µA @ 30 V
Produkt ist nicht verfügbar
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AP9101CAK-CLTRG1 AP9101CAK-CLTRG1 Diodes Incorporated AP9101C.pdf Description: IC BATT PROT LI-ION 1CELL SOT25
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Number of Cells: 1
Mounting Type: Surface Mount
Function: Battery Protection
Operating Temperature: -40°C ~ 85°C (TA)
Battery Chemistry: Lithium Ion/Polymer
Supplier Device Package: SOT-25
Fault Protection: Over Current, Over Voltage
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AP9101CAK6-ALTRG1 AP9101CAK6-ALTRG1 Diodes Incorporated Description: IC BATT PROT LI-ION 1CELL SOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Number of Cells: 1
Mounting Type: Surface Mount
Function: Battery Protection
Operating Temperature: -40°C ~ 85°C (TA)
Battery Chemistry: Lithium Ion/Polymer
Supplier Device Package: SOT-26
Fault Protection: Over Current, Over Voltage
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AP9101CAK6-ALTRG1 AP9101CAK6-ALTRG1 Diodes Incorporated Description: IC BATT PROT LI-ION 1CELL SOT26
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Number of Cells: 1
Mounting Type: Surface Mount
Function: Battery Protection
Operating Temperature: -40°C ~ 85°C (TA)
Battery Chemistry: Lithium Ion/Polymer
Supplier Device Package: SOT-26
Fault Protection: Over Current, Over Voltage
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MMBT4401-13-F-W MMBT4401-13-F-W Diodes Incorporated MMBT4401.pdf Description: TRANS NPN 40V 0.6A SOT-23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 1V
Frequency - Transition: 250MHz
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 310 mW
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MMBT4401-13-F-W MMBT4401-13-F-W Diodes Incorporated MMBT4401.pdf Description: TRANS NPN 40V 0.6A SOT-23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 1V
Frequency - Transition: 250MHz
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 310 mW
Produkt ist nicht verfügbar
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FN6600058 FN6600058 Diodes Incorporated FN6600058.pdf Description: XTAL OSC XO 66.0000MHZ CMOS
Packaging: Tape & Reel (TR)
Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm)
Output: CMOS
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.3V
Frequency: 66 MHz
Base Resonator: Crystal
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FN6600058 FN6600058 Diodes Incorporated FN6600058.pdf Description: XTAL OSC XO 66.0000MHZ CMOS
Packaging: Cut Tape (CT)
Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm)
Output: CMOS
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.3V
Frequency: 66 MHz
Base Resonator: Crystal
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FN6600061 FN6600061 Diodes Incorporated FN6600061.pdf Description: XTAL OSC XO 66.0000MHZ CMOS
Packaging: Tape & Reel (TR)
Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm)
Output: CMOS
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.3V
Frequency: 66 MHz
Base Resonator: Crystal
Produkt ist nicht verfügbar
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ZXT951KQTC ZXT951KQTC Diodes Incorporated ZXT951KQ.pdf Description: TRANS PNP 60V 6A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 600mA, 6A
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2A, 1V
Frequency - Transition: 120MHz
Supplier Device Package: TO-252 (DPAK)
Grade: Automotive
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 2.1 W
Qualification: AEC-Q101
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ZXT951KQTC ZXT951KQTC Diodes Incorporated ZXT951KQ.pdf Description: TRANS PNP 60V 6A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 600mA, 6A
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2A, 1V
Frequency - Transition: 120MHz
Supplier Device Package: TO-252 (DPAK)
Grade: Automotive
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 2.1 W
Qualification: AEC-Q101
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BAV16W-7-F-W BAV16W-7-F-W Diodes Incorporated Description: FAST SWITCHING DIODE SOD123 T&R
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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MURS360BQ MURS360BQ Diodes Incorporated MURS360BQ.pdf Description: IC
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: SMB
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Qualification: AEC-Q101
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MURS360Q Diodes Incorporated MURS360Q.pdf Description: IC
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: SMC (Type C)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 3 A
Current - Reverse Leakage @ Vr: 3 µA @ 600 V
Qualification: AEC-Q101
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AP68355QSP-13 AP68355QSP-13 Diodes Incorporated AP68255Q_AP68355Q.pdf Description: DCDC Cont HV Buck SO-8EP T&R 4K
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 3.5A
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Positive
Frequency - Switching: 300kHz
Voltage - Input (Max): 80V
Topology: Buck
Supplier Device Package: 8-SO-EP
Synchronous Rectifier: Yes
Voltage - Output (Max): 50V
Voltage - Input (Min): 5.5V
Voltage - Output (Min/Fixed): 1.2V
Grade: Automotive
Qualification: AEC-Q100
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AP68355QSP-13 AP68355QSP-13 Diodes Incorporated AP68255Q_AP68355Q.pdf Description: DCDC Cont HV Buck SO-8EP T&R 4K
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 3.5A
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Positive
Frequency - Switching: 300kHz
Voltage - Input (Max): 80V
Topology: Buck
Supplier Device Package: 8-SO-EP
Synchronous Rectifier: Yes
Voltage - Output (Max): 50V
Voltage - Input (Min): 5.5V
Voltage - Output (Min/Fixed): 1.2V
Grade: Automotive
Qualification: AEC-Q100
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MMBT3906-7-F-W MMBT3906-7-F-W Diodes Incorporated MMBT3906.pdf Description: TRANS PNP 40V 0.2A SOT-23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 250MHz
Supplier Device Package: SOT-23-3
Grade: Automotive
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 300 mW
Qualification: AEC-Q101
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MMBT3906-7-F-W MMBT3906-7-F-W Diodes Incorporated MMBT3906.pdf Description: TRANS PNP 40V 0.2A SOT-23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 250MHz
Supplier Device Package: SOT-23-3
Grade: Automotive
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 300 mW
Qualification: AEC-Q101
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PI3HDX12311XEAEX PI3HDX12311XEAEX Diodes Incorporated PI3HDX12311-brief.pdf Description: DCDC Cont HV Buck SO-8EP T&R 4K
Packaging: Tape & Reel (TR)
Package / Case: 32-XFQFN Exposed Pad
Number of Channels: 4
Mounting Type: Surface Mount
Output: Differential
Type: Buffer, ReDriver
Input: Differential
Operating Temperature: -40°C ~ 70°C
Voltage - Supply: 3.135V ~ 3.465V
Applications: HDMI
Data Rate (Max): 12Gbps
Supplier Device Package: X1-QFN2845-32
Signal Conditioning: Input Equalization
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PI3HDX12311XEAEX PI3HDX12311XEAEX Diodes Incorporated PI3HDX12311-brief.pdf Description: DCDC Cont HV Buck SO-8EP T&R 4K
Packaging: Cut Tape (CT)
Package / Case: 32-XFQFN Exposed Pad
Number of Channels: 4
Mounting Type: Surface Mount
Output: Differential
Type: Buffer, ReDriver
Input: Differential
Operating Temperature: -40°C ~ 70°C
Voltage - Supply: 3.135V ~ 3.465V
Applications: HDMI
Data Rate (Max): 12Gbps
Supplier Device Package: X1-QFN2845-32
Signal Conditioning: Input Equalization
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MMBT4401-7-F-W MMBT4401-7-F-W Diodes Incorporated MMBT4401.pdf Description: TRANS NPN 40V 0.6A SOT-23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 1V
Frequency - Transition: 250MHz
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 310 mW
Produkt ist nicht verfügbar
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MMBT4401-7-F-W MMBT4401-7-F-W Diodes Incorporated MMBT4401.pdf Description: TRANS NPN 40V 0.6A SOT-23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 1V
Frequency - Transition: 250MHz
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 310 mW
Produkt ist nicht verfügbar
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PI3EQX1004B2ZHEX PI3EQX1004B2ZHEX Diodes Incorporated Description: USB3 EQX V-QFN3590-42 T&R 3.5K
Packaging: Tape & Reel (TR)
Package / Case: 42-VFQFN Exposed Pad
Number of Channels: 4
Mounting Type: Surface Mount
Output: CML
Type: Buffer, ReDriver
Input: CML
Voltage - Supply: 3.3V
Applications: USB 3.0
Data Rate (Max): 10Gbps
Supplier Device Package: 42-TQFN (9x3.5)
Signal Conditioning: Input Equalization
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ZXLD1615QET5TA ZXLD1615QET5TA Diodes Incorporated ZXLD1615Q.pdf Description: IC REG BOOST FLYBACK ADJ TSOT25
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-5 Thin, TSOT-23-5
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Up, Step-Up/Step-Down
Current - Output: 500mA (Switch)
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: Up to 1MHz
Voltage - Input (Max): 5.5V
Topology: Boost, Flyback, SEPIC
Supplier Device Package: TSOT-25
Synchronous Rectifier: No
Voltage - Output (Max): 28V
Voltage - Input (Min): 2.5V
Voltage - Output (Min/Fixed): 2.5V
Grade: Automotive
Qualification: AEC-Q100
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ZXLD1615QET5TA ZXLD1615QET5TA Diodes Incorporated ZXLD1615Q.pdf Description: IC REG BOOST FLYBACK ADJ TSOT25
Packaging: Cut Tape (CT)
Package / Case: SOT-23-5 Thin, TSOT-23-5
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Up, Step-Up/Step-Down
Current - Output: 500mA (Switch)
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: Up to 1MHz
Voltage - Input (Max): 5.5V
Topology: Boost, Flyback, SEPIC
Supplier Device Package: TSOT-25
Synchronous Rectifier: No
Voltage - Output (Max): 28V
Voltage - Input (Min): 2.5V
Voltage - Output (Min/Fixed): 2.5V
Grade: Automotive
Qualification: AEC-Q100
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MMBT2222A-7-F-W MMBT2222A-7-F-W Diodes Incorporated MMBT2222A.pdf Description: TRANS NPN 40V 0.6A SOT-23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 300MHz
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 310 mW
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MMBT2222A-7-F-W MMBT2222A-7-F-W Diodes Incorporated MMBT2222A.pdf Description: TRANS NPN 40V 0.6A SOT-23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 300MHz
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 310 mW
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DSC06A065LP-13
DSC06A065LP-13
Hersteller: Diodes Incorporated
Description: SIC SBD 650V~1000V T-DFN8080-5 T
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 295pF @ 100mV, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: DFN8080
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 6 A
Current - Reverse Leakage @ Vr: 20 µA @ 650 V
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P6KE250A-B ds21502.pdf
P6KE250A-B
Hersteller: Diodes Incorporated
Description: TVS DIODE 214VWM 344VC DO15
Packaging: Bulk
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 1.75A
Voltage - Reverse Standoff (Typ): 214V
Supplier Device Package: DO-15
Unidirectional Channels: 1
Voltage - Breakdown (Min): 237V
Voltage - Clamping (Max) @ Ipp: 344V
Power - Peak Pulse: 600W
Power Line Protection: No
Produkt ist nicht verfügbar
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B250AE-13 B250%28A%2CB%29E%2C%20B260%28A%2CB%29E.pdf
B250AE-13
Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 50V 2A SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 75pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 2 A
Current - Reverse Leakage @ Vr: 100 µA @ 50 V
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FL2500094 FL.pdf
FL2500094
Hersteller: Diodes Incorporated
Description: CRYSTAL 25.0000MHZ 8PF SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Load Capacitance: 8pF
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Type: MHz Crystal
Operating Temperature: -20°C ~ 70°C
Frequency Stability: ±10ppm
Frequency Tolerance: ±10ppm
Operating Mode: Fundamental
Supplier Device Package: 4-SMD (3.2x2.5)
Height - Seated (Max): 0.031" (0.78mm)
ESR (Equivalent Series Resistance): 60 Ohms
Frequency: 25 MHz
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FL2500094 FL.pdf
FL2500094
Hersteller: Diodes Incorporated
Description: CRYSTAL 25.0000MHZ 8PF SMD
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, No Lead
Load Capacitance: 8pF
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Type: MHz Crystal
Operating Temperature: -20°C ~ 70°C
Frequency Stability: ±10ppm
Frequency Tolerance: ±10ppm
Operating Mode: Fundamental
Supplier Device Package: 4-SMD (3.2x2.5)
Height - Seated (Max): 0.031" (0.78mm)
ESR (Equivalent Series Resistance): 60 Ohms
Frequency: 25 MHz
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FZT956QTA FZT956.pdf
FZT956QTA
Hersteller: Diodes Incorporated
Description: TRANS PNP 200V 2A SOT-223-3
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 275mV @ 400mA, 2A
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 5V
Frequency - Transition: 110MHz
Supplier Device Package: SOT-223-3
Grade: Automotive
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 200 V
Power - Max: 1.6 W
Qualification: AEC-Q101
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HBS410-13 HBS410.pdf
HBS410-13
Hersteller: Diodes Incorporated
Description: BRIDGE RECT 1PHASE 1KV 4A HBS
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: HBS
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
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HBS410-13 HBS410.pdf
HBS410-13
Hersteller: Diodes Incorporated
Description: BRIDGE RECT 1PHASE 1KV 4A HBS
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: HBS
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
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HBS610-13 HBS610.pdf
HBS610-13
Hersteller: Diodes Incorporated
Description: BRIDGE RECT 1PHASE 1KV 6A HBS
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: HBS
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 960 mV @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
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HBS610-13 HBS610.pdf
HBS610-13
Hersteller: Diodes Incorporated
Description: BRIDGE RECT 1PHASE 1KV 6A HBS
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: HBS
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 960 mV @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
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DMT6017LFDF-7 DMT6017LFDF.pdf
DMT6017LFDF-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 65V 8.1A 6UDFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.1A (Ta)
Rds On (Max) @ Id, Vgs: 18mOhm @ 6A, 10V
Power Dissipation (Max): 800mW (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 65 V
Gate Charge (Qg) (Max) @ Vgs: 15.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 891 pF @ 30 V
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DMT6013LSS-13 DMT6013LSS.pdf
DMT6013LSS-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 10A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 14.3mOhm @ 10A, 10V
Power Dissipation (Max): 1.4W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1081 pF @ 30 V
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DMT6013LSS-13 DMT6013LSS.pdf
DMT6013LSS-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 10A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 14.3mOhm @ 10A, 10V
Power Dissipation (Max): 1.4W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1081 pF @ 30 V
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DMT6017LDV-7 DMT6017LDV.pdf
DMT6017LDV-7
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 25.3 PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C: 25.3 (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 6A, 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: PowerDI3333-8 (Type UXC)
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DMT6017LDV-7 DMT6017LDV.pdf
DMT6017LDV-7
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 25.3 PWRDI3333
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C: 25.3 (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 6A, 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: PowerDI3333-8 (Type UXC)
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10+1.95 EUR
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DMT6007LFG-13 DMT6007LFG.pdf
DMT6007LFG-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 15A PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 80A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V
Power Dissipation (Max): 2.2W (Ta), 62.5W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PowerDI3333-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 41.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2090 pF @ 30 V
Produkt ist nicht verfügbar
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DMT6007LFG-13 DMT6007LFG.pdf
DMT6007LFG-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 15A PWRDI3333
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 80A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V
Power Dissipation (Max): 2.2W (Ta), 62.5W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PowerDI3333-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 41.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2090 pF @ 30 V
auf Bestellung 1468 Stücke:
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8+2.41 EUR
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DMP4016SPSW-13 DMP4016SPSW.pdf
DMP4016SPSW-13
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 31V~40V POWERDI506
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 86A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 9.8A, 10V
Power Dissipation (Max): 3.9W (Ta), 119W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type UX)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5697 pF @ 20 V
Produkt ist nicht verfügbar
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DMP4016SPSWQ-13 DMP4016SPSWQ.pdf
DMP4016SPSWQ-13
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 31V~40V POWERDI506
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 86A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 9.8A, 10V
Power Dissipation (Max): 3.9W (Ta), 119W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type UX)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5697 pF @ 20 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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DMT26M0LDG-7
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 25V 11.6A PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.24W (Ta)
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 11.6A (Ta), 33.8A (Tc), 20.1A (Ta), 52.6A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1010pF @ 13V, 4016pF @ 13V
Rds On (Max) @ Id, Vgs: 6mOhm @ 13A, 10V, 2mOhm @ 27A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15.9nC @ 10V, 57.4nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA, 2.2V @ 1mA
Supplier Device Package: PowerDI3333-8 (Type F)
Produkt ist nicht verfügbar
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DMT26M0LDG-13
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 25V 11.6A PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.24W (Ta)
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 11.6A (Ta), 33.8A (Tc), 20.1A (Ta), 52.6A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1010pF @ 13V, 4016pF @ 13V
Rds On (Max) @ Id, Vgs: 6mOhm @ 13A, 10V, 2mOhm @ 27A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15.9nC @ 10V, 57.4nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA, 2.2V @ 1mA
Supplier Device Package: PowerDI3333-8 (Type F)
Produkt ist nicht verfügbar
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DMP3056L-13 DMP3056L.pdf
DMP3056L-13
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 30V 4.3A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 6A, 10V
Power Dissipation (Max): 1.38W (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 642 pF @ 25 V
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DMP3056L-13 DMP3056L.pdf
DMP3056L-13
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 30V 4.3A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 6A, 10V
Power Dissipation (Max): 1.38W (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 642 pF @ 25 V
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ZXTD2090E6TA
ZXTD2090E6TA
Hersteller: Diodes Incorporated
Description: TRANS 2NPN DUAL 50V 1A SOT-26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.1W
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 270mV @ 50mA, 1A
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 1A, 2V
Frequency - Transition: 215MHz
Supplier Device Package: SOT-26
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ZXTD2090E6TA
ZXTD2090E6TA
Hersteller: Diodes Incorporated
Description: TRANS 2NPN DUAL 50V 1A SOT-26
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.1W
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 270mV @ 50mA, 1A
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 1A, 2V
Frequency - Transition: 215MHz
Supplier Device Package: SOT-26
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AP22971GD8-7 AP22971.pdf
AP22971GD8-7
Hersteller: Diodes Incorporated
Description: LOAD SWITCH LOW VOLTAGE X1-WLB19
Features: Load Discharge, Power Good, Slew Rate Controlled
Packaging: Tape & Reel (TR)
Package / Case: 8-XFBGA, WLBGA
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: High Side
Rds On (Typ): 6.7mOhm
Input Type: Non-Inverting
Voltage - Load: 0.65V ~ 3.6V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-WLP (1.88x0.88)
Fault Protection: Over Temperature
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AP22971GD8-7 AP22971.pdf
AP22971GD8-7
Hersteller: Diodes Incorporated
Description: LOAD SWITCH LOW VOLTAGE X1-WLB19
Features: Load Discharge, Power Good, Slew Rate Controlled
Packaging: Cut Tape (CT)
Package / Case: 8-XFBGA, WLBGA
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: High Side
Rds On (Typ): 6.7mOhm
Input Type: Non-Inverting
Voltage - Load: 0.65V ~ 3.6V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-WLP (1.88x0.88)
Fault Protection: Over Temperature
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24+0.74 EUR
34+0.52 EUR
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PI6CB332004AZLFEX-13R PI6CB332004A.pdf
PI6CB332004AZLFEX-13R
Hersteller: Diodes Incorporated
Description: IC
Packaging: Tape & Reel (TR)
Package / Case: 28-VFQFN Exposed Pad
Number of Circuits: 1
Mounting Type: Surface Mount
Output: HCSL
Type: Fanout Buffer (Distribution)
Input: Clock
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.97V ~ 3.63V
Ratio - Input:Output: 1:4
Differential - Input:Output: Yes/Yes
Supplier Device Package: 28-QFN (4x4)
Frequency - Max: 400 MHz
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PI6CB332004AZLFEX-13R PI6CB332004A.pdf
PI6CB332004AZLFEX-13R
Hersteller: Diodes Incorporated
Description: IC
Packaging: Cut Tape (CT)
Package / Case: 28-VFQFN Exposed Pad
Number of Circuits: 1
Mounting Type: Surface Mount
Output: HCSL
Type: Fanout Buffer (Distribution)
Input: Clock
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.97V ~ 3.63V
Ratio - Input:Output: 1:4
Differential - Input:Output: Yes/Yes
Supplier Device Package: 28-QFN (4x4)
Frequency - Max: 400 MHz
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3+6.71 EUR
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SPX2940U-L-5-0 spx2940_ds_rev200_080609.pdf
SPX2940U-L-5-0
Hersteller: Diodes Incorporated
Description: IC REG LINEAR 5V 1A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 1A
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Voltage - Input (Max): 16V
Number of Regulators: 1
Supplier Device Package: TO-220-3
Voltage - Output (Min/Fixed): 5V
Voltage Dropout (Max): 0.28V @ 1A
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit, Transient Voltage
Produkt ist nicht verfügbar
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MMBTA64-7-F-W MMBTA64.pdf
MMBTA64-7-F-W
Hersteller: Diodes Incorporated
Description: GENERAL PURPOSE TRANSISTOR SOT23
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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MMBTA63-7-F-W MMBTA63.pdf
MMBTA63-7-F-W
Hersteller: Diodes Incorporated
Description: GENERAL PURPOSE TRANSISTOR SOT23
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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MMBTA63-7-F-W MMBTA63.pdf
MMBTA63-7-F-W
Hersteller: Diodes Incorporated
Description: GENERAL PURPOSE TRANSISTOR SOT23
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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B230BE-13 B220%28A%2CB%29E%20-%20B245%28A%2CB%29E.pdf
B230BE-13
Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 30V 2A SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 93pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SMB
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A
Current - Reverse Leakage @ Vr: 100 µA @ 30 V
Produkt ist nicht verfügbar
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AP9101CAK-CLTRG1 AP9101C.pdf
AP9101CAK-CLTRG1
Hersteller: Diodes Incorporated
Description: IC BATT PROT LI-ION 1CELL SOT25
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Number of Cells: 1
Mounting Type: Surface Mount
Function: Battery Protection
Operating Temperature: -40°C ~ 85°C (TA)
Battery Chemistry: Lithium Ion/Polymer
Supplier Device Package: SOT-25
Fault Protection: Over Current, Over Voltage
Produkt ist nicht verfügbar
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AP9101CAK6-ALTRG1
AP9101CAK6-ALTRG1
Hersteller: Diodes Incorporated
Description: IC BATT PROT LI-ION 1CELL SOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Number of Cells: 1
Mounting Type: Surface Mount
Function: Battery Protection
Operating Temperature: -40°C ~ 85°C (TA)
Battery Chemistry: Lithium Ion/Polymer
Supplier Device Package: SOT-26
Fault Protection: Over Current, Over Voltage
Produkt ist nicht verfügbar
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AP9101CAK6-ALTRG1
AP9101CAK6-ALTRG1
Hersteller: Diodes Incorporated
Description: IC BATT PROT LI-ION 1CELL SOT26
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Number of Cells: 1
Mounting Type: Surface Mount
Function: Battery Protection
Operating Temperature: -40°C ~ 85°C (TA)
Battery Chemistry: Lithium Ion/Polymer
Supplier Device Package: SOT-26
Fault Protection: Over Current, Over Voltage
Produkt ist nicht verfügbar
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MMBT4401-13-F-W MMBT4401.pdf
MMBT4401-13-F-W
Hersteller: Diodes Incorporated
Description: TRANS NPN 40V 0.6A SOT-23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 1V
Frequency - Transition: 250MHz
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 310 mW
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MMBT4401-13-F-W MMBT4401.pdf
MMBT4401-13-F-W
Hersteller: Diodes Incorporated
Description: TRANS NPN 40V 0.6A SOT-23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 1V
Frequency - Transition: 250MHz
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 310 mW
Produkt ist nicht verfügbar
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FN6600058 FN6600058.pdf
FN6600058
Hersteller: Diodes Incorporated
Description: XTAL OSC XO 66.0000MHZ CMOS
Packaging: Tape & Reel (TR)
Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm)
Output: CMOS
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.3V
Frequency: 66 MHz
Base Resonator: Crystal
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1000+1.39 EUR
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3000+1.3 EUR
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10000+1.2 EUR
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FN6600058 FN6600058.pdf
FN6600058
Hersteller: Diodes Incorporated
Description: XTAL OSC XO 66.0000MHZ CMOS
Packaging: Cut Tape (CT)
Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm)
Output: CMOS
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.3V
Frequency: 66 MHz
Base Resonator: Crystal
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FN6600061 FN6600061.pdf
FN6600061
Hersteller: Diodes Incorporated
Description: XTAL OSC XO 66.0000MHZ CMOS
Packaging: Tape & Reel (TR)
Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm)
Output: CMOS
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.3V
Frequency: 66 MHz
Base Resonator: Crystal
Produkt ist nicht verfügbar
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ZXT951KQTC ZXT951KQ.pdf
ZXT951KQTC
Hersteller: Diodes Incorporated
Description: TRANS PNP 60V 6A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 600mA, 6A
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2A, 1V
Frequency - Transition: 120MHz
Supplier Device Package: TO-252 (DPAK)
Grade: Automotive
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 2.1 W
Qualification: AEC-Q101
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2500+1.09 EUR
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ZXT951KQTC ZXT951KQ.pdf
ZXT951KQTC
Hersteller: Diodes Incorporated
Description: TRANS PNP 60V 6A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 600mA, 6A
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2A, 1V
Frequency - Transition: 120MHz
Supplier Device Package: TO-252 (DPAK)
Grade: Automotive
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 2.1 W
Qualification: AEC-Q101
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5+3.71 EUR
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BAV16W-7-F-W
BAV16W-7-F-W
Hersteller: Diodes Incorporated
Description: FAST SWITCHING DIODE SOD123 T&R
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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MURS360BQ MURS360BQ.pdf
MURS360BQ
Hersteller: Diodes Incorporated
Description: IC
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: SMB
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Qualification: AEC-Q101
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Anzahl Preis
15+1.2 EUR
24+0.74 EUR
100+0.48 EUR
500+0.36 EUR
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MURS360Q MURS360Q.pdf
Hersteller: Diodes Incorporated
Description: IC
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: SMC (Type C)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 3 A
Current - Reverse Leakage @ Vr: 3 µA @ 600 V
Qualification: AEC-Q101
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Anzahl Preis
14+1.27 EUR
23+0.79 EUR
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500+0.39 EUR
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AP68355QSP-13 AP68255Q_AP68355Q.pdf
AP68355QSP-13
Hersteller: Diodes Incorporated
Description: DCDC Cont HV Buck SO-8EP T&R 4K
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 3.5A
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Positive
Frequency - Switching: 300kHz
Voltage - Input (Max): 80V
Topology: Buck
Supplier Device Package: 8-SO-EP
Synchronous Rectifier: Yes
Voltage - Output (Max): 50V
Voltage - Input (Min): 5.5V
Voltage - Output (Min/Fixed): 1.2V
Grade: Automotive
Qualification: AEC-Q100
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AP68355QSP-13 AP68255Q_AP68355Q.pdf
AP68355QSP-13
Hersteller: Diodes Incorporated
Description: DCDC Cont HV Buck SO-8EP T&R 4K
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 3.5A
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Positive
Frequency - Switching: 300kHz
Voltage - Input (Max): 80V
Topology: Buck
Supplier Device Package: 8-SO-EP
Synchronous Rectifier: Yes
Voltage - Output (Max): 50V
Voltage - Input (Min): 5.5V
Voltage - Output (Min/Fixed): 1.2V
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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MMBT3906-7-F-W MMBT3906.pdf
MMBT3906-7-F-W
Hersteller: Diodes Incorporated
Description: TRANS PNP 40V 0.2A SOT-23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 250MHz
Supplier Device Package: SOT-23-3
Grade: Automotive
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 300 mW
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.021 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
MMBT3906-7-F-W MMBT3906.pdf
MMBT3906-7-F-W
Hersteller: Diodes Incorporated
Description: TRANS PNP 40V 0.2A SOT-23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 250MHz
Supplier Device Package: SOT-23-3
Grade: Automotive
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 300 mW
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
112+0.16 EUR
435+0.04 EUR
511+0.034 EUR
618+0.029 EUR
687+0.026 EUR
739+0.024 EUR
1000+0.022 EUR
Mindestbestellmenge: 112
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PI3HDX12311XEAEX PI3HDX12311-brief.pdf
PI3HDX12311XEAEX
Hersteller: Diodes Incorporated
Description: DCDC Cont HV Buck SO-8EP T&R 4K
Packaging: Tape & Reel (TR)
Package / Case: 32-XFQFN Exposed Pad
Number of Channels: 4
Mounting Type: Surface Mount
Output: Differential
Type: Buffer, ReDriver
Input: Differential
Operating Temperature: -40°C ~ 70°C
Voltage - Supply: 3.135V ~ 3.465V
Applications: HDMI
Data Rate (Max): 12Gbps
Supplier Device Package: X1-QFN2845-32
Signal Conditioning: Input Equalization
auf Bestellung 7000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3500+1.87 EUR
7000+1.83 EUR
Mindestbestellmenge: 3500
Im Einkaufswagen  Stück im Wert von  UAH
PI3HDX12311XEAEX PI3HDX12311-brief.pdf
PI3HDX12311XEAEX
Hersteller: Diodes Incorporated
Description: DCDC Cont HV Buck SO-8EP T&R 4K
Packaging: Cut Tape (CT)
Package / Case: 32-XFQFN Exposed Pad
Number of Channels: 4
Mounting Type: Surface Mount
Output: Differential
Type: Buffer, ReDriver
Input: Differential
Operating Temperature: -40°C ~ 70°C
Voltage - Supply: 3.135V ~ 3.465V
Applications: HDMI
Data Rate (Max): 12Gbps
Supplier Device Package: X1-QFN2845-32
Signal Conditioning: Input Equalization
auf Bestellung 7000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.64 EUR
10+2.71 EUR
25+2.47 EUR
100+2.21 EUR
250+2.09 EUR
500+2.01 EUR
1000+1.95 EUR
Mindestbestellmenge: 5
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MMBT4401-7-F-W MMBT4401.pdf
MMBT4401-7-F-W
Hersteller: Diodes Incorporated
Description: TRANS NPN 40V 0.6A SOT-23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 1V
Frequency - Transition: 250MHz
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 310 mW
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MMBT4401-7-F-W MMBT4401.pdf
MMBT4401-7-F-W
Hersteller: Diodes Incorporated
Description: TRANS NPN 40V 0.6A SOT-23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 1V
Frequency - Transition: 250MHz
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 310 mW
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PI3EQX1004B2ZHEX
PI3EQX1004B2ZHEX
Hersteller: Diodes Incorporated
Description: USB3 EQX V-QFN3590-42 T&R 3.5K
Packaging: Tape & Reel (TR)
Package / Case: 42-VFQFN Exposed Pad
Number of Channels: 4
Mounting Type: Surface Mount
Output: CML
Type: Buffer, ReDriver
Input: CML
Voltage - Supply: 3.3V
Applications: USB 3.0
Data Rate (Max): 10Gbps
Supplier Device Package: 42-TQFN (9x3.5)
Signal Conditioning: Input Equalization
Produkt ist nicht verfügbar
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ZXLD1615QET5TA ZXLD1615Q.pdf
ZXLD1615QET5TA
Hersteller: Diodes Incorporated
Description: IC REG BOOST FLYBACK ADJ TSOT25
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-5 Thin, TSOT-23-5
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Up, Step-Up/Step-Down
Current - Output: 500mA (Switch)
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: Up to 1MHz
Voltage - Input (Max): 5.5V
Topology: Boost, Flyback, SEPIC
Supplier Device Package: TSOT-25
Synchronous Rectifier: No
Voltage - Output (Max): 28V
Voltage - Input (Min): 2.5V
Voltage - Output (Min/Fixed): 2.5V
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 18000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+1.09 EUR
6000+1.06 EUR
9000+1.05 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
ZXLD1615QET5TA ZXLD1615Q.pdf
ZXLD1615QET5TA
Hersteller: Diodes Incorporated
Description: IC REG BOOST FLYBACK ADJ TSOT25
Packaging: Cut Tape (CT)
Package / Case: SOT-23-5 Thin, TSOT-23-5
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Up, Step-Up/Step-Down
Current - Output: 500mA (Switch)
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: Up to 1MHz
Voltage - Input (Max): 5.5V
Topology: Boost, Flyback, SEPIC
Supplier Device Package: TSOT-25
Synchronous Rectifier: No
Voltage - Output (Max): 28V
Voltage - Input (Min): 2.5V
Voltage - Output (Min/Fixed): 2.5V
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 18000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.22 EUR
11+1.62 EUR
25+1.47 EUR
100+1.3 EUR
250+1.22 EUR
500+1.17 EUR
1000+1.14 EUR
Mindestbestellmenge: 8
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MMBT2222A-7-F-W MMBT2222A.pdf
MMBT2222A-7-F-W
Hersteller: Diodes Incorporated
Description: TRANS NPN 40V 0.6A SOT-23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 300MHz
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 310 mW
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MMBT2222A-7-F-W MMBT2222A.pdf
MMBT2222A-7-F-W
Hersteller: Diodes Incorporated
Description: TRANS NPN 40V 0.6A SOT-23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 300MHz
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 310 mW
auf Bestellung 2805 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
125+0.14 EUR
400+0.044 EUR
463+0.038 EUR
562+0.031 EUR
625+0.028 EUR
672+0.026 EUR
1000+0.025 EUR
Mindestbestellmenge: 125
Im Einkaufswagen  Stück im Wert von  UAH
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