Produkte > DIODES INCORPORATED > Alle Produkte des Herstellers DIODES INCORPORATED (73241) > Seite 689 nach 1221
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APX803L-36W5-7 | Diodes Incorporated |
Description: RESET GENERATOR SOT25 T&R 3KDigiKey Programmable: Not Verified Supplier Device Package: SOT-25 Voltage - Threshold: 3.6V Reset Timeout: 0ms Typical Number of Voltages Monitored: 1 Operating Temperature: -40°C ~ 85°C (TA) Reset: Active Low Type: Voltage Detector Output: Open Drain or Open Collector Mounting Type: Surface Mount Package / Case: SC-74A, SOT-753 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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DMN65D8L-7-W | Diodes Incorporated |
Description: MOSFET N-CH 60V 310MA SOT23Input Capacitance (Ciss) (Max) @ Vds: 22 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 0.87 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Supplier Device Package: SOT-23-3 Vgs(th) (Max) @ Id: 2V @ 250µA Power Dissipation (Max): 370mW (Ta) Rds On (Max) @ Id, Vgs: 3Ohm @ 115mA, 10V Current - Continuous Drain (Id) @ 25°C: 310mA (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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DMN65D8L-7-W | Diodes Incorporated |
Description: MOSFET N-CH 60V 310MA SOT23Input Capacitance (Ciss) (Max) @ Vds: 22 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 0.87 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Supplier Device Package: SOT-23-3 Vgs(th) (Max) @ Id: 2V @ 250µA Power Dissipation (Max): 370mW (Ta) Rds On (Max) @ Id, Vgs: 3Ohm @ 115mA, 10V Current - Continuous Drain (Id) @ 25°C: 310mA (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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APD260VDTR-G1 | Diodes Incorporated |
Description: DIODE SCHOTTKY 60V 2A DO41Current - Reverse Leakage @ Vr: 500 µA @ 40 V Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A Voltage - DC Reverse (Vr) (Max): 60 V Operating Temperature - Junction: -65°C ~ 125°C Supplier Device Package: DO-41 Current - Average Rectified (Io): 2A Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Packaging: Tape & Box (TB) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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APD260VD-E1 | Diodes Incorporated |
Description: DIODE SCHOTTKY 60V 2A DO41Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Packaging: Bulk Current - Reverse Leakage @ Vr: 500 µA @ 40 V Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A Voltage - DC Reverse (Vr) (Max): 60 V Operating Temperature - Junction: -65°C ~ 125°C Supplier Device Package: DO-41 Current - Average Rectified (Io): 2A |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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APD260VD-G1 | Diodes Incorporated |
Description: DIODE SCHOTTKY 60V 2A DO41Supplier Device Package: DO-41 Current - Average Rectified (Io): 2A Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Packaging: Bulk Current - Reverse Leakage @ Vr: 500 µA @ 40 V Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A Voltage - DC Reverse (Vr) (Max): 60 V Operating Temperature - Junction: -65°C ~ 125°C |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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APD260VG-E1 | Diodes Incorporated |
Description: DIODE SCHOTTKY 60V 2A DO15Current - Reverse Leakage @ Vr: 500 µA @ 40 V Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A Voltage - DC Reverse (Vr) (Max): 60 V Operating Temperature - Junction: -65°C ~ 125°C Supplier Device Package: DO-15 Current - Average Rectified (Io): 2A Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: DO-204AC, DO-15, Axial Packaging: Bulk |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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APD260VG-G1 | Diodes Incorporated |
Description: DIODE SCHOTTKY 60V 2A DO15Current - Reverse Leakage @ Vr: 500 µA @ 40 V Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A Voltage - DC Reverse (Vr) (Max): 60 V Operating Temperature - Junction: -65°C ~ 125°C Supplier Device Package: DO-15 Current - Average Rectified (Io): 2A Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: DO-204AC, DO-15, Axial Packaging: Bulk |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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APD260VGTR-G1 | Diodes Incorporated |
Description: DIODE SCHOTTKY 60V 2A DO15Package / Case: DO-204AC, DO-15, Axial Packaging: Tape & Box (TB) Current - Reverse Leakage @ Vr: 500 µA @ 40 V Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A Voltage - DC Reverse (Vr) (Max): 60 V Operating Temperature - Junction: -65°C ~ 125°C Supplier Device Package: DO-15 Current - Average Rectified (Io): 2A Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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APD260VRTR-G1 | Diodes Incorporated |
Description: DIODE SCHOTTKY 60V 2A DO15Current - Reverse Leakage @ Vr: 500 µA @ 40 V Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A Voltage - DC Reverse (Vr) (Max): 60 V Operating Temperature - Junction: -65°C ~ 125°C Supplier Device Package: DO-15 Current - Average Rectified (Io): 2A Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: DO-204AC, DO-15, Axial Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 7500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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1N4148-T | Diodes Incorporated |
Description: DIODE STANDARD 75V 150MA DO35Packaging: Tape & Reel (TR) Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Technology: Standard Capacitance @ Vr, F: 4pF @ 0V, 1MHz Current - Average Rectified (Io): 150mA Supplier Device Package: DO-35 Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 75 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA Current - Reverse Leakage @ Vr: 5 µA @ 75 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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D15V0X1B2LP-7B | Diodes Incorporated |
Description: TVS DIODE 15VWM 30V X1DFN10062Power Line Protection: No Voltage - Clamping (Max) @ Ipp: 30V Voltage - Breakdown (Min): 16.5V Bidirectional Channels: 1 Supplier Device Package: X1-DFN1006-2 Voltage - Reverse Standoff (Typ): 15V (Max) Current - Peak Pulse (10/1000µs): 5A (8/20µs) Capacitance @ Frequency: 0.55pF @ 1MHz Applications: General Purpose Operating Temperature: -65°C ~ 150°C (TJ) Type: Zener Mounting Type: Surface Mount Package / Case: 0402 (1006 Metric) Packaging: Tape & Reel (TR) |
auf Bestellung 10000 Stücke: Lieferzeit 10-14 Tag (e) |
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D15V0X1B2LP-7B | Diodes Incorporated |
Description: TVS DIODE 15VWM 30V X1DFN10062Voltage - Clamping (Max) @ Ipp: 30V Voltage - Breakdown (Min): 16.5V Bidirectional Channels: 1 Supplier Device Package: X1-DFN1006-2 Voltage - Reverse Standoff (Typ): 15V (Max) Current - Peak Pulse (10/1000µs): 5A (8/20µs) Capacitance @ Frequency: 0.55pF @ 1MHz Applications: General Purpose Operating Temperature: -65°C ~ 150°C (TJ) Type: Zener Mounting Type: Surface Mount Package / Case: 0402 (1006 Metric) Packaging: Cut Tape (CT) Power Line Protection: No |
auf Bestellung 10412 Stücke: Lieferzeit 10-14 Tag (e) |
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SDT5A60SAF-13 | Diodes Incorporated |
Description: DIODE SCHOTTKY 60V 5A SMAF Current - Reverse Leakage @ Vr: 500 µA @ 60 V Voltage - Forward (Vf) (Max) @ If: 520 mV @ 5 A Voltage - DC Reverse (Vr) (Max): 60 V Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: SMAF Current - Average Rectified (Io): 5A Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Flat Leads Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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5.0SMCJ15A-13-F | Diodes Incorporated |
Description: TRANSIENT VOLTAGE SUPPRESSOR PPPackaging: Tape & Reel (TR) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 175°C Applications: General Purpose Current - Peak Pulse (10/1000µs): 205A Voltage - Reverse Standoff (Typ): 15V Supplier Device Package: SMC Unidirectional Channels: 1 Voltage - Breakdown (Min): 16.7V Voltage - Clamping (Max) @ Ipp: 24.4V Power - Peak Pulse: 5000W (5kW) Power Line Protection: No |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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AP131-30WG-7 | Diodes Incorporated |
Description: IC REG LINEAR 3V 300MA SOT-25Protection Features: Over Current, Over Temperature Voltage Dropout (Max): 0.5V @ 300mA PSRR: 60dB (100Hz) Control Features: Enable Voltage - Output (Min/Fixed): 3V Supplier Device Package: SOT-25 Number of Regulators: 1 Voltage - Input (Max): 5.5V Current - Quiescent (Iq): 100 µA Output Configuration: Positive Operating Temperature: -40°C ~ 85°C (TA) Current - Output: 300mA Mounting Type: Surface Mount Output Type: Fixed Package / Case: SC-74A, SOT-753 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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BCW68HTA-W | Diodes Incorporated |
Description: TRANS PNP 45V 0.8A SOT-23-3Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 20nA DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V Frequency - Transition: 100MHz Supplier Device Package: SOT-23-3 Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 330 mW |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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BCW68HTA-W | Diodes Incorporated |
Description: TRANS PNP 45V 0.8A SOT-23-3Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 20nA DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V Frequency - Transition: 100MHz Supplier Device Package: SOT-23-3 Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 330 mW |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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BAT54Q-7-F | Diodes Incorporated |
Description: DIODE SCHOTTKY 30V 200MA SOT233Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 5 ns Technology: Schottky Capacitance @ Vr, F: 10pF @ 1V, 1MHz Current - Average Rectified (Io): 200mA Supplier Device Package: SOT-23-3 Operating Temperature - Junction: -65°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA Current - Reverse Leakage @ Vr: 2 µA @ 25 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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BAT54Q-7-F | Diodes Incorporated |
Description: DIODE SCHOTTKY 30V 200MA SOT233Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 5 ns Technology: Schottky Capacitance @ Vr, F: 10pF @ 1V, 1MHz Current - Average Rectified (Io): 200mA Supplier Device Package: SOT-23-3 Operating Temperature - Junction: -65°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA Current - Reverse Leakage @ Vr: 2 µA @ 25 V Qualification: AEC-Q101 |
auf Bestellung 2329 Stücke: Lieferzeit 10-14 Tag (e) |
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DXTN69060CFG-7 | Diodes Incorporated |
Description: TRANS NPN 60V 3.5A POWERDI3Power - Max: 900 mW Voltage - Collector Emitter Breakdown (Max): 60 V Current - Collector (Ic) (Max): 3.5 A Supplier Device Package: PowerDI3333-8 (SWP) Type UX Frequency - Transition: 200MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 2V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 220mV @ 150mA, 5.5A Operating Temperature: -55°C ~ 150°C (TJ) Transistor Type: NPN Mounting Type: Surface Mount, Wettable Flank Package / Case: 8-PowerVDFN Packaging: Tape & Reel (TR) |
auf Bestellung 20000 Stücke: Lieferzeit 10-14 Tag (e) |
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DXTN69060CFG-7 | Diodes Incorporated |
Description: TRANS NPN 60V 3.5A POWERDI3Mounting Type: Surface Mount, Wettable Flank Package / Case: 8-PowerVDFN Packaging: Cut Tape (CT) Power - Max: 900 mW Voltage - Collector Emitter Breakdown (Max): 60 V Current - Collector (Ic) (Max): 3.5 A Supplier Device Package: PowerDI3333-8 (SWP) Type UX Frequency - Transition: 200MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 2V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 220mV @ 150mA, 5.5A Operating Temperature: -55°C ~ 150°C (TJ) Transistor Type: NPN |
auf Bestellung 21210 Stücke: Lieferzeit 10-14 Tag (e) |
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DMTH10H1M7SPGW-13 | Diodes Incorporated |
Description: MOSFET BVDSS: 61V~100V POWERDI80Input Capacitance (Ciss) (Max) @ Vds: 10881 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 171 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: PowerDI8080-5 Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 5W (Ta), 405W (Tc) Rds On (Max) @ Id, Vgs: 1.5mOhm @ 25A, 10V Current - Continuous Drain (Id) @ 25°C: 352A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C Mounting Type: Surface Mount Package / Case: SOT-1235 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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DMTH10H1M7SPGWQ-13 | Diodes Incorporated |
Description: MOSFET BVDSS: 61V~100V POWERDI80Rds On (Max) @ Id, Vgs: 1.5mOhm @ 25A, 10V Current - Continuous Drain (Id) @ 25°C: 352A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C Mounting Type: Surface Mount Package / Case: SOT-1235 Packaging: Tape & Reel (TR) Qualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 10881 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 171 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Grade: Automotive Supplier Device Package: PowerDI8080-5 Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 5W (Ta), 405W (Tc) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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MX21A0001Q | Diodes Incorporated |
Description: CRYSTAL OSCILLATOR SEAM2520Packaging: Tape & Reel (TR) |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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MX21A0001Q | Diodes Incorporated |
Description: CRYSTAL OSCILLATOR SEAM2520Packaging: Cut Tape (CT) |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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GBU1508-TU | Diodes Incorporated |
Description: MEDIUM/HIGH POWER BRIDGE GBU TUBPackaging: Tube Package / Case: 4-SIP, GBU Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C Technology: Standard Supplier Device Package: GBU Voltage - Peak Reverse (Max): 800 V Current - Average Rectified (Io): 15 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 7.5 A Current - Reverse Leakage @ Vr: 5 µA @ 800 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 20 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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SBR2M100SAF-13 | Diodes Incorporated |
Description: DIODE SBR 100V 2A SMAFPackaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Flat Leads Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Super Barrier Current - Average Rectified (Io): 2A Supplier Device Package: SMAF Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 780 mV @ 2 A Current - Reverse Leakage @ Vr: 1 µA @ 100 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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SBR2M100SAF-13 | Diodes Incorporated |
Description: DIODE SBR 100V 2A SMAFPackaging: Cut Tape (CT) Package / Case: DO-214AC, SMA Flat Leads Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Super Barrier Current - Average Rectified (Io): 2A Supplier Device Package: SMAF Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 780 mV @ 2 A Current - Reverse Leakage @ Vr: 1 µA @ 100 V |
auf Bestellung 1180 Stücke: Lieferzeit 10-14 Tag (e) |
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KBP310G | Diodes Incorporated |
Description: BRIDGE RECT 1PHASE 1KV 3A KBPPackaging: Tube Package / Case: 4-SIP, KBP Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: KBP Voltage - Peak Reverse (Max): 1 kV Current - Average Rectified (Io): 3 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V |
auf Bestellung 48 Stücke: Lieferzeit 10-14 Tag (e) |
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RS1G_HF | Diodes Incorporated |
Description: DIODE STANDARD 400V 1A SMA Operating Temperature - Junction: -65°C ~ 150°C Supplier Device Package: SMA Current - Average Rectified (Io): 1A Capacitance @ Vr, F: 15pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 150 ns Current - Reverse Leakage @ Vr: 5 µA @ 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Voltage - DC Reverse (Vr) (Max): 400 V Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Packaging: Cut Tape (CT) |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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SMAT70AQ-13-F | Diodes Incorporated |
Description: TVS DIODE 70VWM 100VC SMASupplier Device Package: SMA Voltage - Reverse Standoff (Typ): 70V Current - Peak Pulse (10/1000µs): 3.5A Capacitance @ Frequency: 140pF @ 1MHz Operating Temperature: -55°C ~ 150°C (TJ) Type: Zener Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Packaging: Tape & Reel (TR) Qualification: AEC-Q101 Grade: Automotive Power Line Protection: No Power - Peak Pulse: 400W Voltage - Clamping (Max) @ Ipp: 100V Voltage - Breakdown (Min): 77.8V Unidirectional Channels: 1 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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BSS138K-7-W | Diodes Incorporated |
Description: MOSFET N-CH 50V 310MA SOT23Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 310mA (Ta) Rds On (Max) @ Id, Vgs: 3.5Ohm @ 220mA, 10V Power Dissipation (Max): 380mW Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SOT-23-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 50 V Gate Charge (Qg) (Max) @ Vgs: 0.95 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 23.2 pF @ 25 V |
auf Bestellung 897000 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS138K-7-W | Diodes Incorporated |
Description: MOSFET N-CH 50V 310MA SOT23Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 310mA (Ta) Rds On (Max) @ Id, Vgs: 3.5Ohm @ 220mA, 10V Power Dissipation (Max): 380mW Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SOT-23-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 50 V Gate Charge (Qg) (Max) @ Vgs: 0.95 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 23.2 pF @ 25 V |
auf Bestellung 899153 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT6012LFDFQ-7 | Diodes Incorporated |
Description: MOSFET BVDSS: 41V~60V U-DFN2020-Packaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta) Rds On (Max) @ Id, Vgs: 14mOhm @ 8.5A, 10V Power Dissipation (Max): 900mW (Ta) Vgs(th) (Max) @ Id: 2.3V @ 250µA Supplier Device Package: U-DFN2020-6 (Type F) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 13.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 30 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| BZT52C4V7SQ-13-F | Diodes Incorporated |
Description: ZENER DIODE SOD323 T&R 10KPackaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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FL2500121Z | Diodes Incorporated |
Description: CRYSTAL 25.0000MHZ 10PF SMDHeight - Seated (Max): 0.031" (0.78mm) Supplier Device Package: 4-SMD (3.2x2.5) Operating Mode: Fundamental Frequency Tolerance: ±20ppm Frequency Stability: ±20ppm Operating Temperature: -20°C ~ 70°C Type: MHz Crystal Mounting Type: Surface Mount Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm) Load Capacitance: 10pF Package / Case: 4-SMD, No Lead Packaging: Tape & Reel (TR) Frequency: 25 MHz ESR (Equivalent Series Resistance): 60 Ohms |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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BAW56WQ-7-F | Diodes Incorporated |
Description: DIODE ARRAY GP 75V 150MA SOT-323Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Technology: Standard Diode Configuration: 1 Pair Common Anode Current - Average Rectified (Io) (per Diode): 150mA Supplier Device Package: SOT-323 Operating Temperature - Junction: -65°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 75 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Current - Reverse Leakage @ Vr: 2.5 µA @ 75 V Qualification: AEC-Q101 |
auf Bestellung 1250 Stücke: Lieferzeit 10-14 Tag (e) |
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| MBRF20150CTL | Diodes Incorporated |
Description: DIODE SCHOTTKY ITO220ABPackaging: Tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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STPS1060 | Diodes Incorporated |
Description: DIODE ARRAY GP 600V 5A ITO220ABPackaging: Bulk Package / Case: TO-220-3 Full Pack, Isolated Tab Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 5A Supplier Device Package: ITO220AB (Type WX2) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 5 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 50 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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DDTA124XUA-7 | Diodes Incorporated |
Description: TRANS PREBIAS PNP 200MW SOT323Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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DDTA124XCA-7 | Diodes Incorporated |
Description: TRANS PREBIAS PNP 200MW SOT23-3Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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DMN2050LQ-7 | Diodes Incorporated |
Description: MOSFET N-CH 20V 5.9A SOT23Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.9A (Ta) Rds On (Max) @ Id, Vgs: 29mOhm @ 5A, 4.5V Power Dissipation (Max): 1.4W Vgs(th) (Max) @ Id: 1.4V @ 250µA Supplier Device Package: SOT-23-3 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 2V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 532 pF @ 10 V Qualification: AEC-Q101 |
auf Bestellung 27000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN2050LQ-7 | Diodes Incorporated |
Description: MOSFET N-CH 20V 5.9A SOT23Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.9A (Ta) Rds On (Max) @ Id, Vgs: 29mOhm @ 5A, 4.5V Power Dissipation (Max): 1.4W Vgs(th) (Max) @ Id: 1.4V @ 250µA Supplier Device Package: SOT-23-3 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 2V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 532 pF @ 10 V Qualification: AEC-Q101 |
auf Bestellung 27000 Stücke: Lieferzeit 10-14 Tag (e) |
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BZT52C24TQ-7-F | Diodes Incorporated |
Description: DIODE ZENER 24V 300MW SOD523Packaging: Tape & Reel (TR) Tolerance: ±5.83% Package / Case: SC-79, SOD-523 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 24 V Impedance (Max) (Zzt): 70 Ohms Supplier Device Package: SOD-523 Grade: Automotive Power - Max: 300 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 100 nA @ 16.8 V Qualification: AEC-Q101 |
auf Bestellung 1686000 Stücke: Lieferzeit 10-14 Tag (e) |
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BZT52C24TQ-7-F | Diodes Incorporated |
Description: DIODE ZENER 24V 300MW SOD523Packaging: Cut Tape (CT) Tolerance: ±5.83% Package / Case: SC-79, SOD-523 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 24 V Impedance (Max) (Zzt): 70 Ohms Supplier Device Package: SOD-523 Grade: Automotive Power - Max: 300 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 100 nA @ 16.8 V Qualification: AEC-Q101 |
auf Bestellung 1686845 Stücke: Lieferzeit 10-14 Tag (e) |
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DDZX24C-13 | Diodes Incorporated |
Description: DIODE ZENER 24V 300MW SOT23Current - Reverse Leakage @ Vr: 50 nA @ 19 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Power - Max: 300 mW Supplier Device Package: SOT-23-3 Impedance (Max) (Zzt): 35 Ohms Voltage - Zener (Nom) (Vz): 24 V Operating Temperature: -65°C ~ 150°C Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Tolerance: ±3% Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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DDZX24C-13 | Diodes Incorporated |
Description: DIODE ZENER 24V 300MW SOT23Current - Reverse Leakage @ Vr: 50 nA @ 19 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Power - Max: 300 mW Supplier Device Package: SOT-23-3 Impedance (Max) (Zzt): 35 Ohms Voltage - Zener (Nom) (Vz): 24 V Operating Temperature: -65°C ~ 150°C Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Tolerance: ±3% Packaging: Cut Tape (CT) |
auf Bestellung 9900 Stücke: Lieferzeit 10-14 Tag (e) |
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AL5816QEV2 | Diodes Incorporated |
Description: EVAL BOARD FOR AL5816QFeatures: Dimmable Packaging: Bulk Voltage - Input: 4.5V ~ 16V Contents: Board(s) Current - Output / Channel: 150mA Utilized IC / Part: AL5816Q Outputs and Type: 8 Non-Isolated Outputs |
auf Bestellung 4 Stücke: Lieferzeit 10-14 Tag (e) |
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| ABS20M-13 | Diodes Incorporated |
Description: BRIDGE RECT 1PHASE 1KV 2A 4-SOPA Packaging: Cut Tape (CT) Package / Case: 4-SMD, Gull Wing Mounting Type: Surface Mount Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: 4-SOPA (Type WX) Voltage - Peak Reverse (Max): 1 kV Current - Average Rectified (Io): 2 A Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A Current - Reverse Leakage @ Vr: 10 µA @ 1000 V |
auf Bestellung 1511 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN10H6D0LFDB-13 | Diodes Incorporated |
Description: MOSFET BVDSS: 61V~100V U-DFN2020Packaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 N-Channel Operating Temperature: -55°C ~ 150°C Technology: MOSFET (Metal Oxide) Power - Max: 700mW (Ta) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 270mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 41pF @ 50V Rds On (Max) @ Id, Vgs: 6Ohm @ 190mA, 10V Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 10V Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: U-DFN2020-6 (Type B) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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DMC3032LFDB-13 | Diodes Incorporated |
Description: MOSFET N/P-CH 30V 5.3A 6UDFNPackaging: Bulk Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Configuration: N and P-Channel Complementary Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 800mW Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta), 3.4A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 15V, 336pF @ 25V Rds On (Max) @ Id, Vgs: 30mOhm @ 5.8A, 10V, 70mOhm @ 3.8A, 10V Gate Charge (Qg) (Max) @ Vgs: 10.6nC @ 10V, 7.8nC @ 10V Vgs(th) (Max) @ Id: 2V @ 250µA, 2.1V @ 250µA Supplier Device Package: U-DFN2020-6 (Type B) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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74LVC1G14FS3-7 | Diodes Incorporated |
Description: IC INVERT 1CH 1-INP DFN0808-4Packaging: Tape & Reel (TR) Features: Schmitt Trigger Package / Case: 4-XFDFN Exposed Pad Mounting Type: Surface Mount Logic Type: Inverter Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 1.65V ~ 5.5V Current - Output High, Low: 32mA, 32mA Number of Inputs: 1 Supplier Device Package: X2-DFN0808-4 Input Logic Level - High: 1.2V ~ 3.33V Input Logic Level - Low: 0.3V ~ 1.45V Max Propagation Delay @ V, Max CL: 6.5ns @ 5V, 50pF Number of Circuits: 1 Current - Quiescent (Max): 10 µA |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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74LVC1G14FS3-7 | Diodes Incorporated |
Description: IC INVERT 1CH 1-INP DFN0808-4Packaging: Cut Tape (CT) Features: Schmitt Trigger Package / Case: 4-XFDFN Exposed Pad Mounting Type: Surface Mount Logic Type: Inverter Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 1.65V ~ 5.5V Current - Output High, Low: 32mA, 32mA Number of Inputs: 1 Supplier Device Package: X2-DFN0808-4 Input Logic Level - High: 1.2V ~ 3.33V Input Logic Level - Low: 0.3V ~ 1.45V Max Propagation Delay @ V, Max CL: 6.5ns @ 5V, 50pF Number of Circuits: 1 Current - Quiescent (Max): 10 µA |
auf Bestellung 4360 Stücke: Lieferzeit 10-14 Tag (e) |
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74HC32T14-13 | Diodes Incorporated |
Description: IC GATE OR 4CH 2-INP 14TSSOPPackaging: Tape & Reel (TR) Package / Case: 14-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Logic Type: OR Gate Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 2V ~ 6V Current - Output High, Low: 5.2mA, 5.2mA Number of Inputs: 2 Supplier Device Package: 14-TSSOP Input Logic Level - High: 1.5V ~ 4.2V Input Logic Level - Low: 0.5V ~ 1.8V Max Propagation Delay @ V, Max CL: 15ns @ 6V, 50pF Number of Circuits: 4 Current - Quiescent (Max): 20 µA |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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74HC32T14-13 | Diodes Incorporated |
Description: IC GATE OR 4CH 2-INP 14TSSOPPackaging: Cut Tape (CT) Package / Case: 14-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Logic Type: OR Gate Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 2V ~ 6V Current - Output High, Low: 5.2mA, 5.2mA Number of Inputs: 2 Supplier Device Package: 14-TSSOP Input Logic Level - High: 1.5V ~ 4.2V Input Logic Level - Low: 0.5V ~ 1.8V Max Propagation Delay @ V, Max CL: 15ns @ 6V, 50pF Number of Circuits: 4 Current - Quiescent (Max): 20 µA |
auf Bestellung 1070 Stücke: Lieferzeit 10-14 Tag (e) |
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DDTC144ECAQ-7-F | Diodes Incorporated |
Description: TRANS PREBIAS NPN 50V SOT23-3Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V Supplier Device Package: SOT-23-3 Grade: Automotive Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 47 kOhms Resistor - Emitter Base (R2): 47 kOhms Qualification: AEC-Q101 Resistors Included: R1 and R2 |
auf Bestellung 3598 Stücke: Lieferzeit 10-14 Tag (e) |
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SBR3U60P1Q-13 | Diodes Incorporated |
Description: DIODE SBR 60V 3A POWERDI 123Packaging: Tape & Reel (TR) Package / Case: POWERDI®123 Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Super Barrier Current - Average Rectified (Io): 3A Supplier Device Package: PowerDI™ 123 Operating Temperature - Junction: -65°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 620 mV @ 3 A Current - Reverse Leakage @ Vr: 100 µA @ 60 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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SBR3U60P1Q-13 | Diodes Incorporated |
Description: DIODE SBR 60V 3A POWERDI 123Packaging: Cut Tape (CT) Package / Case: POWERDI®123 Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Super Barrier Current - Average Rectified (Io): 3A Supplier Device Package: PowerDI™ 123 Operating Temperature - Junction: -65°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 620 mV @ 3 A Current - Reverse Leakage @ Vr: 100 µA @ 60 V Qualification: AEC-Q101 |
auf Bestellung 5123 Stücke: Lieferzeit 10-14 Tag (e) |
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DMWSH170H850HM4 | Diodes Incorporated |
Description: SIC MOSFET BVDSS: >1000V TO247-4Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.58A (Tj) Rds On (Max) @ Id, Vgs: 850mOhm @ 2A, 20V Power Dissipation (Max): 73.5W (Tc) Vgs(th) (Max) @ Id: 4V @ 500µA Supplier Device Package: TO-247-4 Drive Voltage (Max Rds On, Min Rds On): 18V, 20V Vgs (Max): +25V, -10V Drain to Source Voltage (Vdss): 1700 V Gate Charge (Qg) (Max) @ Vgs: 14.8 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 178 pF @ 1000 V |
auf Bestellung 1260 Stücke: Lieferzeit 10-14 Tag (e) |
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| APX803L-36W5-7 |
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Hersteller: Diodes Incorporated
Description: RESET GENERATOR SOT25 T&R 3K
DigiKey Programmable: Not Verified
Supplier Device Package: SOT-25
Voltage - Threshold: 3.6V
Reset Timeout: 0ms Typical
Number of Voltages Monitored: 1
Operating Temperature: -40°C ~ 85°C (TA)
Reset: Active Low
Type: Voltage Detector
Output: Open Drain or Open Collector
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Packaging: Tape & Reel (TR)
Description: RESET GENERATOR SOT25 T&R 3K
DigiKey Programmable: Not Verified
Supplier Device Package: SOT-25
Voltage - Threshold: 3.6V
Reset Timeout: 0ms Typical
Number of Voltages Monitored: 1
Operating Temperature: -40°C ~ 85°C (TA)
Reset: Active Low
Type: Voltage Detector
Output: Open Drain or Open Collector
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| DMN65D8L-7-W |
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Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 310MA SOT23
Input Capacitance (Ciss) (Max) @ Vds: 22 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 0.87 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 370mW (Ta)
Rds On (Max) @ Id, Vgs: 3Ohm @ 115mA, 10V
Current - Continuous Drain (Id) @ 25°C: 310mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 60V 310MA SOT23
Input Capacitance (Ciss) (Max) @ Vds: 22 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 0.87 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 370mW (Ta)
Rds On (Max) @ Id, Vgs: 3Ohm @ 115mA, 10V
Current - Continuous Drain (Id) @ 25°C: 310mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| DMN65D8L-7-W |
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Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 310MA SOT23
Input Capacitance (Ciss) (Max) @ Vds: 22 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 0.87 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 370mW (Ta)
Rds On (Max) @ Id, Vgs: 3Ohm @ 115mA, 10V
Current - Continuous Drain (Id) @ 25°C: 310mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 60V 310MA SOT23
Input Capacitance (Ciss) (Max) @ Vds: 22 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 0.87 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 370mW (Ta)
Rds On (Max) @ Id, Vgs: 3Ohm @ 115mA, 10V
Current - Continuous Drain (Id) @ 25°C: 310mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| APD260VDTR-G1 |
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Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 60V 2A DO41
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 60 V
Operating Temperature - Junction: -65°C ~ 125°C
Supplier Device Package: DO-41
Current - Average Rectified (Io): 2A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Box (TB)
Description: DIODE SCHOTTKY 60V 2A DO41
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 60 V
Operating Temperature - Junction: -65°C ~ 125°C
Supplier Device Package: DO-41
Current - Average Rectified (Io): 2A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Box (TB)
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| APD260VD-E1 |
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Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 60V 2A DO41
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Bulk
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 60 V
Operating Temperature - Junction: -65°C ~ 125°C
Supplier Device Package: DO-41
Current - Average Rectified (Io): 2A
Description: DIODE SCHOTTKY 60V 2A DO41
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Bulk
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 60 V
Operating Temperature - Junction: -65°C ~ 125°C
Supplier Device Package: DO-41
Current - Average Rectified (Io): 2A
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| APD260VD-G1 |
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Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 60V 2A DO41
Supplier Device Package: DO-41
Current - Average Rectified (Io): 2A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Bulk
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 60 V
Operating Temperature - Junction: -65°C ~ 125°C
Description: DIODE SCHOTTKY 60V 2A DO41
Supplier Device Package: DO-41
Current - Average Rectified (Io): 2A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Bulk
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 60 V
Operating Temperature - Junction: -65°C ~ 125°C
Produkt ist nicht verfügbar
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| APD260VG-E1 |
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Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 60V 2A DO15
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 60 V
Operating Temperature - Junction: -65°C ~ 125°C
Supplier Device Package: DO-15
Current - Average Rectified (Io): 2A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Packaging: Bulk
Description: DIODE SCHOTTKY 60V 2A DO15
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 60 V
Operating Temperature - Junction: -65°C ~ 125°C
Supplier Device Package: DO-15
Current - Average Rectified (Io): 2A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Packaging: Bulk
Produkt ist nicht verfügbar
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| APD260VG-G1 |
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Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 60V 2A DO15
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 60 V
Operating Temperature - Junction: -65°C ~ 125°C
Supplier Device Package: DO-15
Current - Average Rectified (Io): 2A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Packaging: Bulk
Description: DIODE SCHOTTKY 60V 2A DO15
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 60 V
Operating Temperature - Junction: -65°C ~ 125°C
Supplier Device Package: DO-15
Current - Average Rectified (Io): 2A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Packaging: Bulk
Produkt ist nicht verfügbar
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| APD260VGTR-G1 |
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Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 60V 2A DO15
Package / Case: DO-204AC, DO-15, Axial
Packaging: Tape & Box (TB)
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 60 V
Operating Temperature - Junction: -65°C ~ 125°C
Supplier Device Package: DO-15
Current - Average Rectified (Io): 2A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Description: DIODE SCHOTTKY 60V 2A DO15
Package / Case: DO-204AC, DO-15, Axial
Packaging: Tape & Box (TB)
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 60 V
Operating Temperature - Junction: -65°C ~ 125°C
Supplier Device Package: DO-15
Current - Average Rectified (Io): 2A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Produkt ist nicht verfügbar
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| APD260VRTR-G1 |
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Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 60V 2A DO15
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 60 V
Operating Temperature - Junction: -65°C ~ 125°C
Supplier Device Package: DO-15
Current - Average Rectified (Io): 2A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Packaging: Tape & Reel (TR)
Description: DIODE SCHOTTKY 60V 2A DO15
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 60 V
Operating Temperature - Junction: -65°C ~ 125°C
Supplier Device Package: DO-15
Current - Average Rectified (Io): 2A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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| 1N4148-T |
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Hersteller: Diodes Incorporated
Description: DIODE STANDARD 75V 150MA DO35
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 150mA
Supplier Device Package: DO-35
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
Description: DIODE STANDARD 75V 150MA DO35
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 150mA
Supplier Device Package: DO-35
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
Produkt ist nicht verfügbar
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| D15V0X1B2LP-7B |
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Hersteller: Diodes Incorporated
Description: TVS DIODE 15VWM 30V X1DFN10062
Power Line Protection: No
Voltage - Clamping (Max) @ Ipp: 30V
Voltage - Breakdown (Min): 16.5V
Bidirectional Channels: 1
Supplier Device Package: X1-DFN1006-2
Voltage - Reverse Standoff (Typ): 15V (Max)
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Capacitance @ Frequency: 0.55pF @ 1MHz
Applications: General Purpose
Operating Temperature: -65°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: 0402 (1006 Metric)
Packaging: Tape & Reel (TR)
Description: TVS DIODE 15VWM 30V X1DFN10062
Power Line Protection: No
Voltage - Clamping (Max) @ Ipp: 30V
Voltage - Breakdown (Min): 16.5V
Bidirectional Channels: 1
Supplier Device Package: X1-DFN1006-2
Voltage - Reverse Standoff (Typ): 15V (Max)
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Capacitance @ Frequency: 0.55pF @ 1MHz
Applications: General Purpose
Operating Temperature: -65°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: 0402 (1006 Metric)
Packaging: Tape & Reel (TR)
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 10000+ | 0.073 EUR |
| D15V0X1B2LP-7B |
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Hersteller: Diodes Incorporated
Description: TVS DIODE 15VWM 30V X1DFN10062
Voltage - Clamping (Max) @ Ipp: 30V
Voltage - Breakdown (Min): 16.5V
Bidirectional Channels: 1
Supplier Device Package: X1-DFN1006-2
Voltage - Reverse Standoff (Typ): 15V (Max)
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Capacitance @ Frequency: 0.55pF @ 1MHz
Applications: General Purpose
Operating Temperature: -65°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: 0402 (1006 Metric)
Packaging: Cut Tape (CT)
Power Line Protection: No
Description: TVS DIODE 15VWM 30V X1DFN10062
Voltage - Clamping (Max) @ Ipp: 30V
Voltage - Breakdown (Min): 16.5V
Bidirectional Channels: 1
Supplier Device Package: X1-DFN1006-2
Voltage - Reverse Standoff (Typ): 15V (Max)
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Capacitance @ Frequency: 0.55pF @ 1MHz
Applications: General Purpose
Operating Temperature: -65°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: 0402 (1006 Metric)
Packaging: Cut Tape (CT)
Power Line Protection: No
auf Bestellung 10412 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 63+ | 0.33 EUR |
| 88+ | 0.24 EUR |
| 204+ | 0.1 EUR |
| 500+ | 0.098 EUR |
| 1000+ | 0.088 EUR |
| 5000+ | 0.087 EUR |
| SDT5A60SAF-13 |
Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 60V 5A SMAF
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 60 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SMAF
Current - Average Rectified (Io): 5A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA Flat Leads
Packaging: Tape & Reel (TR)
Description: DIODE SCHOTTKY 60V 5A SMAF
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 60 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SMAF
Current - Average Rectified (Io): 5A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA Flat Leads
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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| 5.0SMCJ15A-13-F |
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Hersteller: Diodes Incorporated
Description: TRANSIENT VOLTAGE SUPPRESSOR PP
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 205A
Voltage - Reverse Standoff (Typ): 15V
Supplier Device Package: SMC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 16.7V
Voltage - Clamping (Max) @ Ipp: 24.4V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Description: TRANSIENT VOLTAGE SUPPRESSOR PP
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 205A
Voltage - Reverse Standoff (Typ): 15V
Supplier Device Package: SMC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 16.7V
Voltage - Clamping (Max) @ Ipp: 24.4V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Produkt ist nicht verfügbar
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| AP131-30WG-7 |
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Hersteller: Diodes Incorporated
Description: IC REG LINEAR 3V 300MA SOT-25
Protection Features: Over Current, Over Temperature
Voltage Dropout (Max): 0.5V @ 300mA
PSRR: 60dB (100Hz)
Control Features: Enable
Voltage - Output (Min/Fixed): 3V
Supplier Device Package: SOT-25
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 100 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C (TA)
Current - Output: 300mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: SC-74A, SOT-753
Packaging: Tape & Reel (TR)
Description: IC REG LINEAR 3V 300MA SOT-25
Protection Features: Over Current, Over Temperature
Voltage Dropout (Max): 0.5V @ 300mA
PSRR: 60dB (100Hz)
Control Features: Enable
Voltage - Output (Min/Fixed): 3V
Supplier Device Package: SOT-25
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 100 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C (TA)
Current - Output: 300mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: SC-74A, SOT-753
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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| BCW68HTA-W |
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Hersteller: Diodes Incorporated
Description: TRANS PNP 45V 0.8A SOT-23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 20nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 330 mW
Description: TRANS PNP 45V 0.8A SOT-23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 20nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 330 mW
Produkt ist nicht verfügbar
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| BCW68HTA-W |
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Hersteller: Diodes Incorporated
Description: TRANS PNP 45V 0.8A SOT-23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 20nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 330 mW
Description: TRANS PNP 45V 0.8A SOT-23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 20nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 330 mW
Produkt ist nicht verfügbar
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| BAT54Q-7-F |
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Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 30V 200MA SOT233
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 30V 200MA SOT233
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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| BAT54Q-7-F |
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Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 30V 200MA SOT233
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 30V 200MA SOT233
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Qualification: AEC-Q101
auf Bestellung 2329 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 125+ | 0.17 EUR |
| 167+ | 0.13 EUR |
| 176+ | 0.12 EUR |
| 500+ | 0.076 EUR |
| 1000+ | 0.073 EUR |
| DXTN69060CFG-7 |
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Hersteller: Diodes Incorporated
Description: TRANS NPN 60V 3.5A POWERDI3
Power - Max: 900 mW
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 3.5 A
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 220mV @ 150mA, 5.5A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Description: TRANS NPN 60V 3.5A POWERDI3
Power - Max: 900 mW
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 3.5 A
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 220mV @ 150mA, 5.5A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2000+ | 0.43 EUR |
| 4000+ | 0.39 EUR |
| 6000+ | 0.38 EUR |
| 10000+ | 0.36 EUR |
| 14000+ | 0.35 EUR |
| 20000+ | 0.33 EUR |
| DXTN69060CFG-7 |
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Hersteller: Diodes Incorporated
Description: TRANS NPN 60V 3.5A POWERDI3
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Power - Max: 900 mW
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 3.5 A
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 220mV @ 150mA, 5.5A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Description: TRANS NPN 60V 3.5A POWERDI3
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Power - Max: 900 mW
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 3.5 A
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 220mV @ 150mA, 5.5A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
auf Bestellung 21210 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 13+ | 1.68 EUR |
| 20+ | 1.05 EUR |
| 100+ | 0.68 EUR |
| 500+ | 0.52 EUR |
| 1000+ | 0.48 EUR |
| DMTH10H1M7SPGW-13 |
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Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 61V~100V POWERDI80
Input Capacitance (Ciss) (Max) @ Vds: 10881 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 171 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PowerDI8080-5
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 5W (Ta), 405W (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 352A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: SOT-1235
Packaging: Tape & Reel (TR)
Description: MOSFET BVDSS: 61V~100V POWERDI80
Input Capacitance (Ciss) (Max) @ Vds: 10881 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 171 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PowerDI8080-5
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 5W (Ta), 405W (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 352A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: SOT-1235
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
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| DMTH10H1M7SPGWQ-13 |
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Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 61V~100V POWERDI80
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 352A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: SOT-1235
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 10881 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 171 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: PowerDI8080-5
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 5W (Ta), 405W (Tc)
Description: MOSFET BVDSS: 61V~100V POWERDI80
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 352A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: SOT-1235
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 10881 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 171 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: PowerDI8080-5
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 5W (Ta), 405W (Tc)
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
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Stück im Wert von UAH
| MX21A0001Q |
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auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 3.93 EUR |
| MX21A0001Q |
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auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 7.25 EUR |
| 10+ | 5.47 EUR |
| 25+ | 5.03 EUR |
| 100+ | 4.56 EUR |
| 250+ | 4.32 EUR |
| 500+ | 4.18 EUR |
| 1000+ | 4.07 EUR |
| GBU1508-TU |
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Hersteller: Diodes Incorporated
Description: MEDIUM/HIGH POWER BRIDGE GBU TUB
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 7.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Description: MEDIUM/HIGH POWER BRIDGE GBU TUB
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 7.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 20 Stücke
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| SBR2M100SAF-13 |
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Hersteller: Diodes Incorporated
Description: DIODE SBR 100V 2A SMAF
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 2A
Supplier Device Package: SMAF
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 780 mV @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Description: DIODE SBR 100V 2A SMAF
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 2A
Supplier Device Package: SMAF
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 780 mV @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
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| SBR2M100SAF-13 |
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Hersteller: Diodes Incorporated
Description: DIODE SBR 100V 2A SMAF
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 2A
Supplier Device Package: SMAF
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 780 mV @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Description: DIODE SBR 100V 2A SMAF
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 2A
Supplier Device Package: SMAF
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 780 mV @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
auf Bestellung 1180 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 25+ | 0.86 EUR |
| 40+ | 0.52 EUR |
| 100+ | 0.33 EUR |
| 500+ | 0.25 EUR |
| 1000+ | 0.23 EUR |
| KBP310G |
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Hersteller: Diodes Incorporated
Description: BRIDGE RECT 1PHASE 1KV 3A KBP
Packaging: Tube
Package / Case: 4-SIP, KBP
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBP
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 3 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Description: BRIDGE RECT 1PHASE 1KV 3A KBP
Packaging: Tube
Package / Case: 4-SIP, KBP
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBP
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 3 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
auf Bestellung 48 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 9+ | 2.48 EUR |
| 35+ | 1.23 EUR |
| RS1G_HF |
Hersteller: Diodes Incorporated
Description: DIODE STANDARD 400V 1A SMA
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: SMA
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
Description: DIODE STANDARD 400V 1A SMA
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: SMA
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 112+ | 0.19 EUR |
| 186+ | 0.11 EUR |
| 212+ | 0.099 EUR |
| 253+ | 0.083 EUR |
| 279+ | 0.075 EUR |
| 500+ | 0.07 EUR |
| 1000+ | 0.067 EUR |
| 2500+ | 0.063 EUR |
| SMAT70AQ-13-F |
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Hersteller: Diodes Incorporated
Description: TVS DIODE 70VWM 100VC SMA
Supplier Device Package: SMA
Voltage - Reverse Standoff (Typ): 70V
Current - Peak Pulse (10/1000µs): 3.5A
Capacitance @ Frequency: 140pF @ 1MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 100V
Voltage - Breakdown (Min): 77.8V
Unidirectional Channels: 1
Description: TVS DIODE 70VWM 100VC SMA
Supplier Device Package: SMA
Voltage - Reverse Standoff (Typ): 70V
Current - Peak Pulse (10/1000µs): 3.5A
Capacitance @ Frequency: 140pF @ 1MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 100V
Voltage - Breakdown (Min): 77.8V
Unidirectional Channels: 1
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| BSS138K-7-W |
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Hersteller: Diodes Incorporated
Description: MOSFET N-CH 50V 310MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 310mA (Ta)
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 220mA, 10V
Power Dissipation (Max): 380mW
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 0.95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 23.2 pF @ 25 V
Description: MOSFET N-CH 50V 310MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 310mA (Ta)
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 220mA, 10V
Power Dissipation (Max): 380mW
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 0.95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 23.2 pF @ 25 V
auf Bestellung 897000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.1 EUR |
| 6000+ | 0.092 EUR |
| 9000+ | 0.087 EUR |
| 15000+ | 0.081 EUR |
| 21000+ | 0.077 EUR |
| 30000+ | 0.074 EUR |
| BSS138K-7-W |
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Hersteller: Diodes Incorporated
Description: MOSFET N-CH 50V 310MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 310mA (Ta)
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 220mA, 10V
Power Dissipation (Max): 380mW
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 0.95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 23.2 pF @ 25 V
Description: MOSFET N-CH 50V 310MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 310mA (Ta)
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 220mA, 10V
Power Dissipation (Max): 380mW
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 0.95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 23.2 pF @ 25 V
auf Bestellung 899153 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 42+ | 0.5 EUR |
| 69+ | 0.31 EUR |
| 110+ | 0.19 EUR |
| 500+ | 0.14 EUR |
| 1000+ | 0.12 EUR |
| DMT6012LFDFQ-7 |
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Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 41V~60V U-DFN2020-
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta)
Rds On (Max) @ Id, Vgs: 14mOhm @ 8.5A, 10V
Power Dissipation (Max): 900mW (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 13.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 30 V
Qualification: AEC-Q101
Description: MOSFET BVDSS: 41V~60V U-DFN2020-
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta)
Rds On (Max) @ Id, Vgs: 14mOhm @ 8.5A, 10V
Power Dissipation (Max): 900mW (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 13.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 30 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
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| BZT52C4V7SQ-13-F |
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Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
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Stück im Wert von UAH
| FL2500121Z |
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Hersteller: Diodes Incorporated
Description: CRYSTAL 25.0000MHZ 10PF SMD
Height - Seated (Max): 0.031" (0.78mm)
Supplier Device Package: 4-SMD (3.2x2.5)
Operating Mode: Fundamental
Frequency Tolerance: ±20ppm
Frequency Stability: ±20ppm
Operating Temperature: -20°C ~ 70°C
Type: MHz Crystal
Mounting Type: Surface Mount
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Load Capacitance: 10pF
Package / Case: 4-SMD, No Lead
Packaging: Tape & Reel (TR)
Frequency: 25 MHz
ESR (Equivalent Series Resistance): 60 Ohms
Description: CRYSTAL 25.0000MHZ 10PF SMD
Height - Seated (Max): 0.031" (0.78mm)
Supplier Device Package: 4-SMD (3.2x2.5)
Operating Mode: Fundamental
Frequency Tolerance: ±20ppm
Frequency Stability: ±20ppm
Operating Temperature: -20°C ~ 70°C
Type: MHz Crystal
Mounting Type: Surface Mount
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Load Capacitance: 10pF
Package / Case: 4-SMD, No Lead
Packaging: Tape & Reel (TR)
Frequency: 25 MHz
ESR (Equivalent Series Resistance): 60 Ohms
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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Stück im Wert von UAH
| BAW56WQ-7-F |
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Hersteller: Diodes Incorporated
Description: DIODE ARRAY GP 75V 150MA SOT-323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 150mA
Supplier Device Package: SOT-323
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 2.5 µA @ 75 V
Qualification: AEC-Q101
Description: DIODE ARRAY GP 75V 150MA SOT-323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 150mA
Supplier Device Package: SOT-323
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 2.5 µA @ 75 V
Qualification: AEC-Q101
auf Bestellung 1250 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 44+ | 0.48 EUR |
| 72+ | 0.29 EUR |
| 116+ | 0.18 EUR |
| 500+ | 0.13 EUR |
| 1000+ | 0.12 EUR |
| STPS1060 |
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Hersteller: Diodes Incorporated
Description: DIODE ARRAY GP 600V 5A ITO220AB
Packaging: Bulk
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: ITO220AB (Type WX2)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Description: DIODE ARRAY GP 600V 5A ITO220AB
Packaging: Bulk
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: ITO220AB (Type WX2)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 50 Stücke
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Stück im Wert von UAH
| DDTA124XUA-7 |
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Hersteller: Diodes Incorporated
Description: TRANS PREBIAS PNP 200MW SOT323
Packaging: Tape & Reel (TR)
Description: TRANS PREBIAS PNP 200MW SOT323
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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Stück im Wert von UAH
| DDTA124XCA-7 |
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Hersteller: Diodes Incorporated
Description: TRANS PREBIAS PNP 200MW SOT23-3
Packaging: Tape & Reel (TR)
Description: TRANS PREBIAS PNP 200MW SOT23-3
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| DMN2050LQ-7 |
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Hersteller: Diodes Incorporated
Description: MOSFET N-CH 20V 5.9A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.9A (Ta)
Rds On (Max) @ Id, Vgs: 29mOhm @ 5A, 4.5V
Power Dissipation (Max): 1.4W
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: SOT-23-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 2V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 532 pF @ 10 V
Qualification: AEC-Q101
Description: MOSFET N-CH 20V 5.9A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.9A (Ta)
Rds On (Max) @ Id, Vgs: 29mOhm @ 5A, 4.5V
Power Dissipation (Max): 1.4W
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: SOT-23-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 2V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 532 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 27000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.32 EUR |
| 6000+ | 0.29 EUR |
| 9000+ | 0.27 EUR |
| 15000+ | 0.26 EUR |
| 21000+ | 0.25 EUR |
| DMN2050LQ-7 |
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Hersteller: Diodes Incorporated
Description: MOSFET N-CH 20V 5.9A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.9A (Ta)
Rds On (Max) @ Id, Vgs: 29mOhm @ 5A, 4.5V
Power Dissipation (Max): 1.4W
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: SOT-23-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 2V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 532 pF @ 10 V
Qualification: AEC-Q101
Description: MOSFET N-CH 20V 5.9A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.9A (Ta)
Rds On (Max) @ Id, Vgs: 29mOhm @ 5A, 4.5V
Power Dissipation (Max): 1.4W
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: SOT-23-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 2V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 532 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 27000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 15+ | 1.4 EUR |
| 25+ | 0.87 EUR |
| 100+ | 0.56 EUR |
| 500+ | 0.43 EUR |
| 1000+ | 0.38 EUR |
| BZT52C24TQ-7-F |
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Hersteller: Diodes Incorporated
Description: DIODE ZENER 24V 300MW SOD523
Packaging: Tape & Reel (TR)
Tolerance: ±5.83%
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 70 Ohms
Supplier Device Package: SOD-523
Grade: Automotive
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 16.8 V
Qualification: AEC-Q101
Description: DIODE ZENER 24V 300MW SOD523
Packaging: Tape & Reel (TR)
Tolerance: ±5.83%
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 70 Ohms
Supplier Device Package: SOD-523
Grade: Automotive
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 16.8 V
Qualification: AEC-Q101
auf Bestellung 1686000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.093 EUR |
| 6000+ | 0.083 EUR |
| 9000+ | 0.079 EUR |
| 15000+ | 0.073 EUR |
| 21000+ | 0.069 EUR |
| 30000+ | 0.067 EUR |
| BZT52C24TQ-7-F |
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Hersteller: Diodes Incorporated
Description: DIODE ZENER 24V 300MW SOD523
Packaging: Cut Tape (CT)
Tolerance: ±5.83%
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 70 Ohms
Supplier Device Package: SOD-523
Grade: Automotive
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 16.8 V
Qualification: AEC-Q101
Description: DIODE ZENER 24V 300MW SOD523
Packaging: Cut Tape (CT)
Tolerance: ±5.83%
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 70 Ohms
Supplier Device Package: SOD-523
Grade: Automotive
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 16.8 V
Qualification: AEC-Q101
auf Bestellung 1686845 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 46+ | 0.46 EUR |
| 75+ | 0.29 EUR |
| 121+ | 0.18 EUR |
| 500+ | 0.13 EUR |
| 1000+ | 0.11 EUR |
| DDZX24C-13 |
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Hersteller: Diodes Incorporated
Description: DIODE ZENER 24V 300MW SOT23
Current - Reverse Leakage @ Vr: 50 nA @ 19 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 300 mW
Supplier Device Package: SOT-23-3
Impedance (Max) (Zzt): 35 Ohms
Voltage - Zener (Nom) (Vz): 24 V
Operating Temperature: -65°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Tolerance: ±3%
Packaging: Tape & Reel (TR)
Description: DIODE ZENER 24V 300MW SOT23
Current - Reverse Leakage @ Vr: 50 nA @ 19 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 300 mW
Supplier Device Package: SOT-23-3
Impedance (Max) (Zzt): 35 Ohms
Voltage - Zener (Nom) (Vz): 24 V
Operating Temperature: -65°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Tolerance: ±3%
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| DDZX24C-13 |
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Hersteller: Diodes Incorporated
Description: DIODE ZENER 24V 300MW SOT23
Current - Reverse Leakage @ Vr: 50 nA @ 19 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 300 mW
Supplier Device Package: SOT-23-3
Impedance (Max) (Zzt): 35 Ohms
Voltage - Zener (Nom) (Vz): 24 V
Operating Temperature: -65°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Tolerance: ±3%
Packaging: Cut Tape (CT)
Description: DIODE ZENER 24V 300MW SOT23
Current - Reverse Leakage @ Vr: 50 nA @ 19 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 300 mW
Supplier Device Package: SOT-23-3
Impedance (Max) (Zzt): 35 Ohms
Voltage - Zener (Nom) (Vz): 24 V
Operating Temperature: -65°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Tolerance: ±3%
Packaging: Cut Tape (CT)
auf Bestellung 9900 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 53+ | 0.39 EUR |
| 87+ | 0.24 EUR |
| 141+ | 0.15 EUR |
| 500+ | 0.11 EUR |
| 1000+ | 0.096 EUR |
| 2000+ | 0.084 EUR |
| 5000+ | 0.073 EUR |
| AL5816QEV2 |
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Hersteller: Diodes Incorporated
Description: EVAL BOARD FOR AL5816Q
Features: Dimmable
Packaging: Bulk
Voltage - Input: 4.5V ~ 16V
Contents: Board(s)
Current - Output / Channel: 150mA
Utilized IC / Part: AL5816Q
Outputs and Type: 8 Non-Isolated Outputs
Description: EVAL BOARD FOR AL5816Q
Features: Dimmable
Packaging: Bulk
Voltage - Input: 4.5V ~ 16V
Contents: Board(s)
Current - Output / Channel: 150mA
Utilized IC / Part: AL5816Q
Outputs and Type: 8 Non-Isolated Outputs
auf Bestellung 4 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 118.38 EUR |
| ABS20M-13 |
Hersteller: Diodes Incorporated
Description: BRIDGE RECT 1PHASE 1KV 2A 4-SOPA
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: 4-SOPA (Type WX)
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Description: BRIDGE RECT 1PHASE 1KV 2A 4-SOPA
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: 4-SOPA (Type WX)
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
auf Bestellung 1511 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 28+ | 0.75 EUR |
| 46+ | 0.46 EUR |
| 100+ | 0.29 EUR |
| 500+ | 0.21 EUR |
| 1000+ | 0.19 EUR |
| DMN10H6D0LFDB-13 |
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Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 61V~100V U-DFN2020
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 700mW (Ta)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 270mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 41pF @ 50V
Rds On (Max) @ Id, Vgs: 6Ohm @ 190mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: U-DFN2020-6 (Type B)
Description: MOSFET BVDSS: 61V~100V U-DFN2020
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 700mW (Ta)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 270mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 41pF @ 50V
Rds On (Max) @ Id, Vgs: 6Ohm @ 190mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: U-DFN2020-6 (Type B)
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| DMC3032LFDB-13 |
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Hersteller: Diodes Incorporated
Description: MOSFET N/P-CH 30V 5.3A 6UDFN
Packaging: Bulk
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 800mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta), 3.4A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 15V, 336pF @ 25V
Rds On (Max) @ Id, Vgs: 30mOhm @ 5.8A, 10V, 70mOhm @ 3.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10.6nC @ 10V, 7.8nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 250µA, 2.1V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type B)
Description: MOSFET N/P-CH 30V 5.3A 6UDFN
Packaging: Bulk
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 800mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta), 3.4A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 15V, 336pF @ 25V
Rds On (Max) @ Id, Vgs: 30mOhm @ 5.8A, 10V, 70mOhm @ 3.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10.6nC @ 10V, 7.8nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 250µA, 2.1V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type B)
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| 74LVC1G14FS3-7 |
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Hersteller: Diodes Incorporated
Description: IC INVERT 1CH 1-INP DFN0808-4
Packaging: Tape & Reel (TR)
Features: Schmitt Trigger
Package / Case: 4-XFDFN Exposed Pad
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 1
Supplier Device Package: X2-DFN0808-4
Input Logic Level - High: 1.2V ~ 3.33V
Input Logic Level - Low: 0.3V ~ 1.45V
Max Propagation Delay @ V, Max CL: 6.5ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 10 µA
Description: IC INVERT 1CH 1-INP DFN0808-4
Packaging: Tape & Reel (TR)
Features: Schmitt Trigger
Package / Case: 4-XFDFN Exposed Pad
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 1
Supplier Device Package: X2-DFN0808-4
Input Logic Level - High: 1.2V ~ 3.33V
Input Logic Level - Low: 0.3V ~ 1.45V
Max Propagation Delay @ V, Max CL: 6.5ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 10 µA
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| 74LVC1G14FS3-7 |
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Hersteller: Diodes Incorporated
Description: IC INVERT 1CH 1-INP DFN0808-4
Packaging: Cut Tape (CT)
Features: Schmitt Trigger
Package / Case: 4-XFDFN Exposed Pad
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 1
Supplier Device Package: X2-DFN0808-4
Input Logic Level - High: 1.2V ~ 3.33V
Input Logic Level - Low: 0.3V ~ 1.45V
Max Propagation Delay @ V, Max CL: 6.5ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 10 µA
Description: IC INVERT 1CH 1-INP DFN0808-4
Packaging: Cut Tape (CT)
Features: Schmitt Trigger
Package / Case: 4-XFDFN Exposed Pad
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 1
Supplier Device Package: X2-DFN0808-4
Input Logic Level - High: 1.2V ~ 3.33V
Input Logic Level - Low: 0.3V ~ 1.45V
Max Propagation Delay @ V, Max CL: 6.5ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 10 µA
auf Bestellung 4360 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 59+ | 0.36 EUR |
| 90+ | 0.24 EUR |
| 102+ | 0.2 EUR |
| 120+ | 0.18 EUR |
| 250+ | 0.17 EUR |
| 500+ | 0.15 EUR |
| 1000+ | 0.14 EUR |
| 74HC32T14-13 |
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Hersteller: Diodes Incorporated
Description: IC GATE OR 4CH 2-INP 14TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: OR Gate
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 5.2mA, 5.2mA
Number of Inputs: 2
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 1.5V ~ 4.2V
Input Logic Level - Low: 0.5V ~ 1.8V
Max Propagation Delay @ V, Max CL: 15ns @ 6V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 20 µA
Description: IC GATE OR 4CH 2-INP 14TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: OR Gate
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 5.2mA, 5.2mA
Number of Inputs: 2
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 1.5V ~ 4.2V
Input Logic Level - Low: 0.5V ~ 1.8V
Max Propagation Delay @ V, Max CL: 15ns @ 6V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 20 µA
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| 74HC32T14-13 |
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Hersteller: Diodes Incorporated
Description: IC GATE OR 4CH 2-INP 14TSSOP
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: OR Gate
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 5.2mA, 5.2mA
Number of Inputs: 2
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 1.5V ~ 4.2V
Input Logic Level - Low: 0.5V ~ 1.8V
Max Propagation Delay @ V, Max CL: 15ns @ 6V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 20 µA
Description: IC GATE OR 4CH 2-INP 14TSSOP
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: OR Gate
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 5.2mA, 5.2mA
Number of Inputs: 2
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 1.5V ~ 4.2V
Input Logic Level - Low: 0.5V ~ 1.8V
Max Propagation Delay @ V, Max CL: 15ns @ 6V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 20 µA
auf Bestellung 1070 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 50+ | 0.42 EUR |
| 76+ | 0.27 EUR |
| 86+ | 0.25 EUR |
| 100+ | 0.21 EUR |
| 250+ | 0.19 EUR |
| 500+ | 0.18 EUR |
| DDTC144ECAQ-7-F |
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Hersteller: Diodes Incorporated
Description: TRANS PREBIAS NPN 50V SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V
Supplier Device Package: SOT-23-3
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
Description: TRANS PREBIAS NPN 50V SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V
Supplier Device Package: SOT-23-3
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
auf Bestellung 3598 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 42+ | 0.5 EUR |
| 68+ | 0.31 EUR |
| 109+ | 0.19 EUR |
| 500+ | 0.14 EUR |
| 1000+ | 0.13 EUR |
| SBR3U60P1Q-13 |
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Hersteller: Diodes Incorporated
Description: DIODE SBR 60V 3A POWERDI 123
Packaging: Tape & Reel (TR)
Package / Case: POWERDI®123
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 3A
Supplier Device Package: PowerDI™ 123
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 620 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
Qualification: AEC-Q101
Description: DIODE SBR 60V 3A POWERDI 123
Packaging: Tape & Reel (TR)
Package / Case: POWERDI®123
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 3A
Supplier Device Package: PowerDI™ 123
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 620 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
Qualification: AEC-Q101
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Mindestbestellmenge: 10000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| SBR3U60P1Q-13 |
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Hersteller: Diodes Incorporated
Description: DIODE SBR 60V 3A POWERDI 123
Packaging: Cut Tape (CT)
Package / Case: POWERDI®123
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 3A
Supplier Device Package: PowerDI™ 123
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 620 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
Qualification: AEC-Q101
Description: DIODE SBR 60V 3A POWERDI 123
Packaging: Cut Tape (CT)
Package / Case: POWERDI®123
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 3A
Supplier Device Package: PowerDI™ 123
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 620 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
Qualification: AEC-Q101
auf Bestellung 5123 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 31+ | 0.69 EUR |
| 46+ | 0.46 EUR |
| 100+ | 0.38 EUR |
| 500+ | 0.29 EUR |
| 1000+ | 0.21 EUR |
| 2000+ | 0.2 EUR |
| DMWSH170H850HM4 |
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Hersteller: Diodes Incorporated
Description: SIC MOSFET BVDSS: >1000V TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.58A (Tj)
Rds On (Max) @ Id, Vgs: 850mOhm @ 2A, 20V
Power Dissipation (Max): 73.5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 500µA
Supplier Device Package: TO-247-4
Drive Voltage (Max Rds On, Min Rds On): 18V, 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1700 V
Gate Charge (Qg) (Max) @ Vgs: 14.8 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 178 pF @ 1000 V
Description: SIC MOSFET BVDSS: >1000V TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.58A (Tj)
Rds On (Max) @ Id, Vgs: 850mOhm @ 2A, 20V
Power Dissipation (Max): 73.5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 500µA
Supplier Device Package: TO-247-4
Drive Voltage (Max Rds On, Min Rds On): 18V, 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1700 V
Gate Charge (Qg) (Max) @ Vgs: 14.8 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 178 pF @ 1000 V
auf Bestellung 1260 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 30+ | 5.3 EUR |

























