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2N7002E-7-F-W 2N7002E-7-F-W Diodes Incorporated 2N7002E.pdf Description: MOSFET N-CH 60V 250MA SOT23-3
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 0.22 nC @ 4.5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 370mW (Ta)
Rds On (Max) @ Id, Vgs: 3Ohm @ 250mA, 10V
Current - Continuous Drain (Id) @ 25°C: 250mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
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2N7002E-7-F-W 2N7002E-7-F-W Diodes Incorporated 2N7002E.pdf Description: MOSFET N-CH 60V 250MA SOT23-3
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Gate Charge (Qg) (Max) @ Vgs: 0.22 nC @ 4.5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 370mW (Ta)
Rds On (Max) @ Id, Vgs: 3Ohm @ 250mA, 10V
Current - Continuous Drain (Id) @ 25°C: 250mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
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DMG3N60SCT Diodes Incorporated Description: MOSFET N-CH 600V 3.3A TO220AB
Gate Charge (Qg) (Max) @ Vgs: 12.6 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: TO-220AB (Type TH)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 104W (Tc)
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 1.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 354 pF @ 25 V
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AP33771CFBZ-13-FA02 AP33771CFBZ-13-FA02 Diodes Incorporated High-Performance-USB-PD-3.1-EPR-Sink-Controllers-Provide-a-Versatile-Solution-for-USB-PD-Equipment.pdf Description: USB EXT POWER RANGE W-DFN3030-14
Supplier Device Package: W-DFN3030-14 (Type A1)
Current - Supply: 3.3mA
Applications: USB, Type-C Controller
Voltage - Supply: 2.75V ~ 3.25V, 3.3V ~ 5.33V, 4.37V ~ 31V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 14-WFDFN Exposed Pad
Packaging: Tape & Reel (TR)
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MBR6045PT MBR6045PT Diodes Incorporated ds30053.pdf Description: DIODE ARRAY SCHOTT 45V 60A TO-3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: TO-3P
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 60 A
Current - Reverse Leakage @ Vr: 1 mA @ 45 V
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1.5KE15CA-B 1.5KE15CA-B Diodes Incorporated ds21503.pdf Description: TVS DIODE 12.8VWM 21.2VC DO201
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 71A
Voltage - Reverse Standoff (Typ): 12.8V
Supplier Device Package: DO-201
Bidirectional Channels: 1
Voltage - Breakdown (Min): 14.3V
Voltage - Clamping (Max) @ Ipp: 21.2V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
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SMAJ13AQ-13-F SMAJ13AQ-13-F Diodes Incorporated SMAJ5.0CAQ-SMAJ200CAQ.pdf Description: TVS DIODE 13VWM 21.5VC SMA
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 18.6A
Voltage - Reverse Standoff (Typ): 13V
Supplier Device Package: SMA
Unidirectional Channels: 1
Voltage - Breakdown (Min): 14.4V
Voltage - Clamping (Max) @ Ipp: 21.5V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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KBJ1010G-TU KBJ1010G-TU Diodes Incorporated KBJ1010G.pdf Description: MEDIUM/HIGH POWER BRIDGE KBJ TUB
Packaging: Tube
Package / Case: 4-SIP, KBJ
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBJ
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 10 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
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KBJ1006G-TU KBJ1006G-TU Diodes Incorporated KBJ1006G.pdf Description: MEDIUM/HIGH POWER BRIDGE KBJ TUB
Packaging: Tube
Package / Case: 4-SIP, KBJ
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBJ
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 10 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
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HX3CE8301Q Diodes Incorporated HX3CE8301Q.pdf Description: CRYSTAL OSCILLATOR SEAM3225 T&R
Packaging: Tape & Reel (TR)
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APX803L-36W5-7 APX803L-36W5-7 Diodes Incorporated APX803L.pdf Description: RESET GENERATOR SOT25 T&R 3K
DigiKey Programmable: Not Verified
Supplier Device Package: SOT-25
Voltage - Threshold: 3.6V
Reset Timeout: 0ms Typical
Number of Voltages Monitored: 1
Operating Temperature: -40°C ~ 85°C (TA)
Reset: Active Low
Type: Voltage Detector
Output: Open Drain or Open Collector
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Packaging: Tape & Reel (TR)
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DMN65D8L-7-W DMN65D8L-7-W Diodes Incorporated DMN65D8L.pdf Description: MOSFET N-CH 60V 310MA SOT23
Input Capacitance (Ciss) (Max) @ Vds: 22 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 0.87 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 370mW (Ta)
Rds On (Max) @ Id, Vgs: 3Ohm @ 115mA, 10V
Current - Continuous Drain (Id) @ 25°C: 310mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
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DMN65D8L-7-W DMN65D8L-7-W Diodes Incorporated DMN65D8L.pdf Description: MOSFET N-CH 60V 310MA SOT23
Input Capacitance (Ciss) (Max) @ Vds: 22 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 0.87 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 370mW (Ta)
Rds On (Max) @ Id, Vgs: 3Ohm @ 115mA, 10V
Current - Continuous Drain (Id) @ 25°C: 310mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
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APD260VDTR-G1 APD260VDTR-G1 Diodes Incorporated APD260.pdf Description: DIODE SCHOTTKY 60V 2A DO41
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 60 V
Operating Temperature - Junction: -65°C ~ 125°C
Supplier Device Package: DO-41
Current - Average Rectified (Io): 2A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Box (TB)
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APD260VD-E1 APD260VD-E1 Diodes Incorporated APD260.pdf Description: DIODE SCHOTTKY 60V 2A DO41
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Bulk
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 60 V
Operating Temperature - Junction: -65°C ~ 125°C
Supplier Device Package: DO-41
Current - Average Rectified (Io): 2A
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APD260VD-G1 APD260VD-G1 Diodes Incorporated APD260.pdf Description: DIODE SCHOTTKY 60V 2A DO41
Supplier Device Package: DO-41
Current - Average Rectified (Io): 2A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Bulk
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 60 V
Operating Temperature - Junction: -65°C ~ 125°C
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APD260VG-E1 APD260VG-E1 Diodes Incorporated APD260.pdf Description: DIODE SCHOTTKY 60V 2A DO15
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 60 V
Operating Temperature - Junction: -65°C ~ 125°C
Supplier Device Package: DO-15
Current - Average Rectified (Io): 2A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Packaging: Bulk
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APD260VG-G1 APD260VG-G1 Diodes Incorporated APD260.pdf Description: DIODE SCHOTTKY 60V 2A DO15
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 60 V
Operating Temperature - Junction: -65°C ~ 125°C
Supplier Device Package: DO-15
Current - Average Rectified (Io): 2A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Packaging: Bulk
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APD260VGTR-G1 APD260VGTR-G1 Diodes Incorporated APD260.pdf Description: DIODE SCHOTTKY 60V 2A DO15
Package / Case: DO-204AC, DO-15, Axial
Packaging: Tape & Box (TB)
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 60 V
Operating Temperature - Junction: -65°C ~ 125°C
Supplier Device Package: DO-15
Current - Average Rectified (Io): 2A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
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APD260VRTR-G1 APD260VRTR-G1 Diodes Incorporated APD260.pdf Description: DIODE SCHOTTKY 60V 2A DO15
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 60 V
Operating Temperature - Junction: -65°C ~ 125°C
Supplier Device Package: DO-15
Current - Average Rectified (Io): 2A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Packaging: Tape & Reel (TR)
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1N4148-T 1N4148-T Diodes Incorporated ds12019.pdf Description: DIODE STANDARD 75V 150MA DO35
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 150mA
Supplier Device Package: DO-35
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
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D15V0X1B2LP-7B D15V0X1B2LP-7B Diodes Incorporated D15V0X1B2LP.pdf Description: TVS DIODE 15VWM 30V X1DFN10062
Power Line Protection: No
Voltage - Clamping (Max) @ Ipp: 30V
Voltage - Breakdown (Min): 16.5V
Bidirectional Channels: 1
Supplier Device Package: X1-DFN1006-2
Voltage - Reverse Standoff (Typ): 15V (Max)
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Capacitance @ Frequency: 0.55pF @ 1MHz
Applications: General Purpose
Operating Temperature: -65°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: 0402 (1006 Metric)
Packaging: Tape & Reel (TR)
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D15V0X1B2LP-7B D15V0X1B2LP-7B Diodes Incorporated D15V0X1B2LP.pdf Description: TVS DIODE 15VWM 30V X1DFN10062
Voltage - Clamping (Max) @ Ipp: 30V
Voltage - Breakdown (Min): 16.5V
Bidirectional Channels: 1
Supplier Device Package: X1-DFN1006-2
Voltage - Reverse Standoff (Typ): 15V (Max)
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Capacitance @ Frequency: 0.55pF @ 1MHz
Applications: General Purpose
Operating Temperature: -65°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: 0402 (1006 Metric)
Packaging: Cut Tape (CT)
Power Line Protection: No
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SDT5A60SAF-13 SDT5A60SAF-13 Diodes Incorporated Description: DIODE SCHOTTKY 60V 5A SMAF
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 60 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SMAF
Current - Average Rectified (Io): 5A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA Flat Leads
Packaging: Tape & Reel (TR)
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5.0SMCJ15A-13-F 5.0SMCJ15A-13-F Diodes Incorporated ds45435.pdf Description: TRANSIENT VOLTAGE SUPPRESSOR PP
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 205A
Voltage - Reverse Standoff (Typ): 15V
Supplier Device Package: SMC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 16.7V
Voltage - Clamping (Max) @ Ipp: 24.4V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
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AP131-30WG-7 AP131-30WG-7 Diodes Incorporated AP131-xxW_Feb2019_DS.pdf Description: IC REG LINEAR 3V 300MA SOT-25
Protection Features: Over Current, Over Temperature
Voltage Dropout (Max): 0.5V @ 300mA
PSRR: 60dB (100Hz)
Control Features: Enable
Voltage - Output (Min/Fixed): 3V
Supplier Device Package: SOT-25
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 100 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C (TA)
Current - Output: 300mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: SC-74A, SOT-753
Packaging: Tape & Reel (TR)
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BCW68HTA-W BCW68HTA-W Diodes Incorporated BCW68H.pdf Description: TRANS PNP 45V 0.8A SOT-23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 20nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 330 mW
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BCW68HTA-W BCW68HTA-W Diodes Incorporated BCW68H.pdf Description: TRANS PNP 45V 0.8A SOT-23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 20nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 330 mW
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BAT54Q-7-F BAT54Q-7-F Diodes Incorporated BAT54Q_AQ_CQ_SQ.pdf Description: DIODE SCHOTTKY 30V 200MA SOT233
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Qualification: AEC-Q101
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BAT54Q-7-F BAT54Q-7-F Diodes Incorporated BAT54Q_AQ_CQ_SQ.pdf Description: DIODE SCHOTTKY 30V 200MA SOT233
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Qualification: AEC-Q101
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DXTN69060CFG-7 DXTN69060CFG-7 Diodes Incorporated DXTN69060CFG.pdf Description: TRANS NPN 60V 3.5A POWERDI3
Power - Max: 900 mW
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 3.5 A
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 220mV @ 150mA, 5.5A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
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DXTN69060CFG-7 DXTN69060CFG-7 Diodes Incorporated DXTN69060CFG.pdf Description: TRANS NPN 60V 3.5A POWERDI3
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Power - Max: 900 mW
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 3.5 A
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 220mV @ 150mA, 5.5A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
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DMTH10H1M7SPGW-13 DMTH10H1M7SPGW-13 Diodes Incorporated DMTH10H1M7SPGW.pdf Description: MOSFET BVDSS: 61V~100V POWERDI80
Input Capacitance (Ciss) (Max) @ Vds: 10881 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 171 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PowerDI8080-5
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 5W (Ta), 405W (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 352A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: SOT-1235
Packaging: Tape & Reel (TR)
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DMTH10H1M7SPGWQ-13 DMTH10H1M7SPGWQ-13 Diodes Incorporated DMTH10H1M7SPGWQ.pdf Description: MOSFET BVDSS: 61V~100V POWERDI80
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 352A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: SOT-1235
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 10881 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 171 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: PowerDI8080-5
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 5W (Ta), 405W (Tc)
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MX21A0001Q MX21A0001Q Diodes Incorporated MXQ+Series.pdf Description: CRYSTAL OSCILLATOR SEAM2520
Packaging: Tape & Reel (TR)
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MX21A0001Q MX21A0001Q Diodes Incorporated MXQ+Series.pdf Description: CRYSTAL OSCILLATOR SEAM2520
Packaging: Cut Tape (CT)
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GBU1508-TU GBU1508-TU Diodes Incorporated GBU1508.pdf Description: MEDIUM/HIGH POWER BRIDGE GBU TUB
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 7.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
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SBR2M100SAF-13 SBR2M100SAF-13 Diodes Incorporated SBR2M100SAF.pdf Description: DIODE SBR 100V 2A SMAF
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 2A
Supplier Device Package: SMAF
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 780 mV @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
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SBR2M100SAF-13 SBR2M100SAF-13 Diodes Incorporated SBR2M100SAF.pdf Description: DIODE SBR 100V 2A SMAF
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 2A
Supplier Device Package: SMAF
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 780 mV @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
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KBP310G KBP310G Diodes Incorporated KBP304G-KBP310G.pdf Description: BRIDGE RECT 1PHASE 1KV 3A KBP
Packaging: Tube
Package / Case: 4-SIP, KBP
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBP
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 3 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
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RS1G_HF RS1G_HF Diodes Incorporated Description: DIODE STANDARD 400V 1A SMA
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: SMA
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
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SMAT70AQ-13-F SMAT70AQ-13-F Diodes Incorporated SMAT70AQ%2FSMBT70AQ.pdf Description: TVS DIODE 70VWM 100VC SMA
Supplier Device Package: SMA
Voltage - Reverse Standoff (Typ): 70V
Current - Peak Pulse (10/1000µs): 3.5A
Capacitance @ Frequency: 140pF @ 1MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 100V
Voltage - Breakdown (Min): 77.8V
Unidirectional Channels: 1
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BSS138K-7-W BSS138K-7-W Diodes Incorporated BSS138K.pdf Description: MOSFET N-CH 50V 310MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 310mA (Ta)
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 220mA, 10V
Power Dissipation (Max): 380mW
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 0.95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 23.2 pF @ 25 V
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BSS138K-7-W BSS138K-7-W Diodes Incorporated BSS138K.pdf Description: MOSFET N-CH 50V 310MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 310mA (Ta)
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 220mA, 10V
Power Dissipation (Max): 380mW
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 0.95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 23.2 pF @ 25 V
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DMT6012LFDFQ-7 DMT6012LFDFQ-7 Diodes Incorporated DMT6012LFDFQ.pdf Description: MOSFET BVDSS: 41V~60V U-DFN2020-
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta)
Rds On (Max) @ Id, Vgs: 14mOhm @ 8.5A, 10V
Power Dissipation (Max): 900mW (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 13.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 30 V
Qualification: AEC-Q101
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BZT52C4V7SQ-13-F Diodes Incorporated BZT52CxxS.pdf Description: ZENER DIODE SOD323 T&R 10K
Packaging: Tape & Reel (TR)
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FL2500121Z FL2500121Z Diodes Incorporated FL.pdf Description: CRYSTAL 25.0000MHZ 10PF SMD
Height - Seated (Max): 0.031" (0.78mm)
Supplier Device Package: 4-SMD (3.2x2.5)
Operating Mode: Fundamental
Frequency Tolerance: ±20ppm
Frequency Stability: ±20ppm
Operating Temperature: -20°C ~ 70°C
Type: MHz Crystal
Mounting Type: Surface Mount
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Load Capacitance: 10pF
Package / Case: 4-SMD, No Lead
Packaging: Tape & Reel (TR)
Frequency: 25 MHz
ESR (Equivalent Series Resistance): 60 Ohms
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BAW56-7-F-W BAW56-7-F-W Diodes Incorporated BAW56.pdf Description: DIODE ARRAY GP 75V 300MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 300mA (DC)
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 2.5 µA @ 75 V
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BAW56-7-F-W BAW56-7-F-W Diodes Incorporated BAW56.pdf Description: DIODE ARRAY GP 75V 300MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 300mA (DC)
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 2.5 µA @ 75 V
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BAW56WQ-7-F BAW56WQ-7-F Diodes Incorporated BAW56W.pdf Description: DIODE ARRAY GP 75V 150MA SOT-323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 150mA
Supplier Device Package: SOT-323
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 2.5 µA @ 75 V
Qualification: AEC-Q101
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MBRF20150CTL Diodes Incorporated MBRF20150CTL%20N0150%20REV.B.pdf Description: DIODE SCHOTTKY ITO220AB
Packaging: Tube
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STPS1060 STPS1060 Diodes Incorporated STPS1060.pdf Description: DIODE ARRAY GP 600V 5A ITO220AB
Packaging: Bulk
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: ITO220AB (Type WX2)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
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DDTA124XUA-7 DDTA124XUA-7 Diodes Incorporated ds30326.pdf Description: TRANS PREBIAS PNP 200MW SOT323
Packaging: Tape & Reel (TR)
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DDTA124XCA-7 DDTA124XCA-7 Diodes Incorporated ds30334.pdf Description: TRANS PREBIAS PNP 200MW SOT23-3
Packaging: Tape & Reel (TR)
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DMN2050LQ-7 DMN2050LQ-7 Diodes Incorporated DMN2050LQ.pdf Description: MOSFET N-CH 20V 5.9A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.9A (Ta)
Rds On (Max) @ Id, Vgs: 29mOhm @ 5A, 4.5V
Power Dissipation (Max): 1.4W
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: SOT-23-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 2V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 532 pF @ 10 V
Qualification: AEC-Q101
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DMN2050LQ-7 DMN2050LQ-7 Diodes Incorporated DMN2050LQ.pdf Description: MOSFET N-CH 20V 5.9A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.9A (Ta)
Rds On (Max) @ Id, Vgs: 29mOhm @ 5A, 4.5V
Power Dissipation (Max): 1.4W
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: SOT-23-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 2V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 532 pF @ 10 V
Qualification: AEC-Q101
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BZT52C24TQ-7-F BZT52C24TQ-7-F Diodes Incorporated ds30502.pdf Description: DIODE ZENER 24V 300MW SOD523
Packaging: Tape & Reel (TR)
Tolerance: ±5.83%
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 70 Ohms
Supplier Device Package: SOD-523
Grade: Automotive
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 16.8 V
Qualification: AEC-Q101
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BZT52C24TQ-7-F BZT52C24TQ-7-F Diodes Incorporated ds30502.pdf Description: DIODE ZENER 24V 300MW SOD523
Packaging: Cut Tape (CT)
Tolerance: ±5.83%
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 70 Ohms
Supplier Device Package: SOD-523
Grade: Automotive
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 16.8 V
Qualification: AEC-Q101
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DDZX24C-13 DDZX24C-13 Diodes Incorporated ds30408.pdf Description: DIODE ZENER 24V 300MW SOT23
Current - Reverse Leakage @ Vr: 50 nA @ 19 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 300 mW
Supplier Device Package: SOT-23-3
Impedance (Max) (Zzt): 35 Ohms
Voltage - Zener (Nom) (Vz): 24 V
Operating Temperature: -65°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Tolerance: ±3%
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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DDZX24C-13 DDZX24C-13 Diodes Incorporated ds30408.pdf Description: DIODE ZENER 24V 300MW SOT23
Current - Reverse Leakage @ Vr: 50 nA @ 19 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 300 mW
Supplier Device Package: SOT-23-3
Impedance (Max) (Zzt): 35 Ohms
Voltage - Zener (Nom) (Vz): 24 V
Operating Temperature: -65°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Tolerance: ±3%
Packaging: Cut Tape (CT)
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2N7002E-7-F-W 2N7002E.pdf
2N7002E-7-F-W
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 250MA SOT23-3
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 0.22 nC @ 4.5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 370mW (Ta)
Rds On (Max) @ Id, Vgs: 3Ohm @ 250mA, 10V
Current - Continuous Drain (Id) @ 25°C: 250mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Produkt ist nicht verfügbar
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2N7002E-7-F-W 2N7002E.pdf
2N7002E-7-F-W
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 250MA SOT23-3
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Gate Charge (Qg) (Max) @ Vgs: 0.22 nC @ 4.5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 370mW (Ta)
Rds On (Max) @ Id, Vgs: 3Ohm @ 250mA, 10V
Current - Continuous Drain (Id) @ 25°C: 250mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
Produkt ist nicht verfügbar
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DMG3N60SCT
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 600V 3.3A TO220AB
Gate Charge (Qg) (Max) @ Vgs: 12.6 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: TO-220AB (Type TH)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 104W (Tc)
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 1.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 354 pF @ 25 V
Produkt ist nicht verfügbar
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AP33771CFBZ-13-FA02 High-Performance-USB-PD-3.1-EPR-Sink-Controllers-Provide-a-Versatile-Solution-for-USB-PD-Equipment.pdf
AP33771CFBZ-13-FA02
Hersteller: Diodes Incorporated
Description: USB EXT POWER RANGE W-DFN3030-14
Supplier Device Package: W-DFN3030-14 (Type A1)
Current - Supply: 3.3mA
Applications: USB, Type-C Controller
Voltage - Supply: 2.75V ~ 3.25V, 3.3V ~ 5.33V, 4.37V ~ 31V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 14-WFDFN Exposed Pad
Packaging: Tape & Reel (TR)
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3000+0.92 EUR
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MBR6045PT ds30053.pdf
MBR6045PT
Hersteller: Diodes Incorporated
Description: DIODE ARRAY SCHOTT 45V 60A TO-3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: TO-3P
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 60 A
Current - Reverse Leakage @ Vr: 1 mA @ 45 V
Produkt ist nicht verfügbar
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1.5KE15CA-B ds21503.pdf
1.5KE15CA-B
Hersteller: Diodes Incorporated
Description: TVS DIODE 12.8VWM 21.2VC DO201
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 71A
Voltage - Reverse Standoff (Typ): 12.8V
Supplier Device Package: DO-201
Bidirectional Channels: 1
Voltage - Breakdown (Min): 14.3V
Voltage - Clamping (Max) @ Ipp: 21.2V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Produkt ist nicht verfügbar
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SMAJ13AQ-13-F SMAJ5.0CAQ-SMAJ200CAQ.pdf
SMAJ13AQ-13-F
Hersteller: Diodes Incorporated
Description: TVS DIODE 13VWM 21.5VC SMA
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 18.6A
Voltage - Reverse Standoff (Typ): 13V
Supplier Device Package: SMA
Unidirectional Channels: 1
Voltage - Breakdown (Min): 14.4V
Voltage - Clamping (Max) @ Ipp: 21.5V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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21+0.84 EUR
34+0.53 EUR
100+0.33 EUR
500+0.25 EUR
1000+0.22 EUR
2000+0.2 EUR
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KBJ1010G-TU KBJ1010G.pdf
KBJ1010G-TU
Hersteller: Diodes Incorporated
Description: MEDIUM/HIGH POWER BRIDGE KBJ TUB
Packaging: Tube
Package / Case: 4-SIP, KBJ
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBJ
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 10 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar
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KBJ1006G-TU KBJ1006G.pdf
KBJ1006G-TU
Hersteller: Diodes Incorporated
Description: MEDIUM/HIGH POWER BRIDGE KBJ TUB
Packaging: Tube
Package / Case: 4-SIP, KBJ
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBJ
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 10 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar
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HX3CE8301Q HX3CE8301Q.pdf
Hersteller: Diodes Incorporated
Description: CRYSTAL OSCILLATOR SEAM3225 T&R
Packaging: Tape & Reel (TR)
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AnzahlPreis
3000+4.54 EUR
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APX803L-36W5-7 APX803L.pdf
APX803L-36W5-7
Hersteller: Diodes Incorporated
Description: RESET GENERATOR SOT25 T&R 3K
DigiKey Programmable: Not Verified
Supplier Device Package: SOT-25
Voltage - Threshold: 3.6V
Reset Timeout: 0ms Typical
Number of Voltages Monitored: 1
Operating Temperature: -40°C ~ 85°C (TA)
Reset: Active Low
Type: Voltage Detector
Output: Open Drain or Open Collector
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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DMN65D8L-7-W DMN65D8L.pdf
DMN65D8L-7-W
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 310MA SOT23
Input Capacitance (Ciss) (Max) @ Vds: 22 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 0.87 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 370mW (Ta)
Rds On (Max) @ Id, Vgs: 3Ohm @ 115mA, 10V
Current - Continuous Drain (Id) @ 25°C: 310mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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DMN65D8L-7-W DMN65D8L.pdf
DMN65D8L-7-W
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 310MA SOT23
Input Capacitance (Ciss) (Max) @ Vds: 22 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 0.87 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 370mW (Ta)
Rds On (Max) @ Id, Vgs: 3Ohm @ 115mA, 10V
Current - Continuous Drain (Id) @ 25°C: 310mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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APD260VDTR-G1 APD260.pdf
APD260VDTR-G1
Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 60V 2A DO41
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 60 V
Operating Temperature - Junction: -65°C ~ 125°C
Supplier Device Package: DO-41
Current - Average Rectified (Io): 2A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Box (TB)
Produkt ist nicht verfügbar
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APD260VD-E1 APD260.pdf
APD260VD-E1
Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 60V 2A DO41
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Bulk
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 60 V
Operating Temperature - Junction: -65°C ~ 125°C
Supplier Device Package: DO-41
Current - Average Rectified (Io): 2A
Produkt ist nicht verfügbar
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APD260VD-G1 APD260.pdf
APD260VD-G1
Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 60V 2A DO41
Supplier Device Package: DO-41
Current - Average Rectified (Io): 2A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Bulk
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 60 V
Operating Temperature - Junction: -65°C ~ 125°C
Produkt ist nicht verfügbar
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APD260VG-E1 APD260.pdf
APD260VG-E1
Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 60V 2A DO15
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 60 V
Operating Temperature - Junction: -65°C ~ 125°C
Supplier Device Package: DO-15
Current - Average Rectified (Io): 2A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Packaging: Bulk
Produkt ist nicht verfügbar
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APD260VG-G1 APD260.pdf
APD260VG-G1
Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 60V 2A DO15
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 60 V
Operating Temperature - Junction: -65°C ~ 125°C
Supplier Device Package: DO-15
Current - Average Rectified (Io): 2A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Packaging: Bulk
Produkt ist nicht verfügbar
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APD260VGTR-G1 APD260.pdf
APD260VGTR-G1
Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 60V 2A DO15
Package / Case: DO-204AC, DO-15, Axial
Packaging: Tape & Box (TB)
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 60 V
Operating Temperature - Junction: -65°C ~ 125°C
Supplier Device Package: DO-15
Current - Average Rectified (Io): 2A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Produkt ist nicht verfügbar
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APD260VRTR-G1 APD260.pdf
APD260VRTR-G1
Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 60V 2A DO15
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 60 V
Operating Temperature - Junction: -65°C ~ 125°C
Supplier Device Package: DO-15
Current - Average Rectified (Io): 2A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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1N4148-T ds12019.pdf
1N4148-T
Hersteller: Diodes Incorporated
Description: DIODE STANDARD 75V 150MA DO35
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 150mA
Supplier Device Package: DO-35
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
Produkt ist nicht verfügbar
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D15V0X1B2LP-7B D15V0X1B2LP.pdf
D15V0X1B2LP-7B
Hersteller: Diodes Incorporated
Description: TVS DIODE 15VWM 30V X1DFN10062
Power Line Protection: No
Voltage - Clamping (Max) @ Ipp: 30V
Voltage - Breakdown (Min): 16.5V
Bidirectional Channels: 1
Supplier Device Package: X1-DFN1006-2
Voltage - Reverse Standoff (Typ): 15V (Max)
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Capacitance @ Frequency: 0.55pF @ 1MHz
Applications: General Purpose
Operating Temperature: -65°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: 0402 (1006 Metric)
Packaging: Tape & Reel (TR)
auf Bestellung 10000 Stücke:
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10000+0.061 EUR
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D15V0X1B2LP-7B D15V0X1B2LP.pdf
D15V0X1B2LP-7B
Hersteller: Diodes Incorporated
Description: TVS DIODE 15VWM 30V X1DFN10062
Voltage - Clamping (Max) @ Ipp: 30V
Voltage - Breakdown (Min): 16.5V
Bidirectional Channels: 1
Supplier Device Package: X1-DFN1006-2
Voltage - Reverse Standoff (Typ): 15V (Max)
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Capacitance @ Frequency: 0.55pF @ 1MHz
Applications: General Purpose
Operating Temperature: -65°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: 0402 (1006 Metric)
Packaging: Cut Tape (CT)
Power Line Protection: No
auf Bestellung 10412 Stücke:
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AnzahlPreis
63+0.28 EUR
88+0.2 EUR
204+0.087 EUR
500+0.082 EUR
1000+0.074 EUR
5000+0.073 EUR
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SDT5A60SAF-13
SDT5A60SAF-13
Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 60V 5A SMAF
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 60 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SMAF
Current - Average Rectified (Io): 5A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA Flat Leads
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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5.0SMCJ15A-13-F ds45435.pdf
5.0SMCJ15A-13-F
Hersteller: Diodes Incorporated
Description: TRANSIENT VOLTAGE SUPPRESSOR PP
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 205A
Voltage - Reverse Standoff (Typ): 15V
Supplier Device Package: SMC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 16.7V
Voltage - Clamping (Max) @ Ipp: 24.4V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Produkt ist nicht verfügbar
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AP131-30WG-7 AP131-xxW_Feb2019_DS.pdf
AP131-30WG-7
Hersteller: Diodes Incorporated
Description: IC REG LINEAR 3V 300MA SOT-25
Protection Features: Over Current, Over Temperature
Voltage Dropout (Max): 0.5V @ 300mA
PSRR: 60dB (100Hz)
Control Features: Enable
Voltage - Output (Min/Fixed): 3V
Supplier Device Package: SOT-25
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 100 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C (TA)
Current - Output: 300mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: SC-74A, SOT-753
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BCW68HTA-W BCW68H.pdf
BCW68HTA-W
Hersteller: Diodes Incorporated
Description: TRANS PNP 45V 0.8A SOT-23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 20nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 330 mW
Produkt ist nicht verfügbar
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BCW68HTA-W BCW68H.pdf
BCW68HTA-W
Hersteller: Diodes Incorporated
Description: TRANS PNP 45V 0.8A SOT-23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 20nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 330 mW
Produkt ist nicht verfügbar
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BAT54Q-7-F BAT54Q_AQ_CQ_SQ.pdf
BAT54Q-7-F
Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 30V 200MA SOT233
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BAT54Q-7-F BAT54Q_AQ_CQ_SQ.pdf
BAT54Q-7-F
Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 30V 200MA SOT233
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Qualification: AEC-Q101
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AnzahlPreis
125+0.14 EUR
167+0.11 EUR
176+0.1 EUR
500+0.064 EUR
1000+0.061 EUR
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DXTN69060CFG-7 DXTN69060CFG.pdf
DXTN69060CFG-7
Hersteller: Diodes Incorporated
Description: TRANS NPN 60V 3.5A POWERDI3
Power - Max: 900 mW
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 3.5 A
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 220mV @ 150mA, 5.5A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
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2000+0.36 EUR
4000+0.33 EUR
6000+0.32 EUR
10000+0.3 EUR
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DXTN69060CFG-7 DXTN69060CFG.pdf
DXTN69060CFG-7
Hersteller: Diodes Incorporated
Description: TRANS NPN 60V 3.5A POWERDI3
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Power - Max: 900 mW
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 3.5 A
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 220mV @ 150mA, 5.5A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
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13+1.41 EUR
20+0.88 EUR
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500+0.44 EUR
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DMTH10H1M7SPGW-13 DMTH10H1M7SPGW.pdf
DMTH10H1M7SPGW-13
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 61V~100V POWERDI80
Input Capacitance (Ciss) (Max) @ Vds: 10881 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 171 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PowerDI8080-5
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 5W (Ta), 405W (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 352A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: SOT-1235
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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DMTH10H1M7SPGWQ-13 DMTH10H1M7SPGWQ.pdf
DMTH10H1M7SPGWQ-13
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 61V~100V POWERDI80
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 352A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: SOT-1235
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 10881 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 171 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: PowerDI8080-5
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 5W (Ta), 405W (Tc)
Produkt ist nicht verfügbar
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MX21A0001Q MXQ+Series.pdf
MX21A0001Q
Hersteller: Diodes Incorporated
Description: CRYSTAL OSCILLATOR SEAM2520
Packaging: Tape & Reel (TR)
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AnzahlPreis
3000+3.3 EUR
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MX21A0001Q MXQ+Series.pdf
MX21A0001Q
Hersteller: Diodes Incorporated
Description: CRYSTAL OSCILLATOR SEAM2520
Packaging: Cut Tape (CT)
auf Bestellung 3000 Stücke:
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3+6.09 EUR
10+4.6 EUR
25+4.23 EUR
100+3.83 EUR
250+3.63 EUR
500+3.51 EUR
1000+3.42 EUR
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GBU1508-TU GBU1508.pdf
GBU1508-TU
Hersteller: Diodes Incorporated
Description: MEDIUM/HIGH POWER BRIDGE GBU TUB
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 7.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Produkt ist nicht verfügbar
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SBR2M100SAF-13 SBR2M100SAF.pdf
SBR2M100SAF-13
Hersteller: Diodes Incorporated
Description: DIODE SBR 100V 2A SMAF
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 2A
Supplier Device Package: SMAF
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 780 mV @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Produkt ist nicht verfügbar
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SBR2M100SAF-13 SBR2M100SAF.pdf
SBR2M100SAF-13
Hersteller: Diodes Incorporated
Description: DIODE SBR 100V 2A SMAF
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 2A
Supplier Device Package: SMAF
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 780 mV @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
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25+0.7 EUR
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KBP310G KBP304G-KBP310G.pdf
KBP310G
Hersteller: Diodes Incorporated
Description: BRIDGE RECT 1PHASE 1KV 3A KBP
Packaging: Tube
Package / Case: 4-SIP, KBP
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBP
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 3 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
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9+2.04 EUR
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RS1G_HF
RS1G_HF
Hersteller: Diodes Incorporated
Description: DIODE STANDARD 400V 1A SMA
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: SMA
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
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112+0.16 EUR
186+0.095 EUR
212+0.083 EUR
253+0.07 EUR
279+0.063 EUR
500+0.059 EUR
1000+0.056 EUR
2500+0.053 EUR
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SMAT70AQ-13-F SMAT70AQ%2FSMBT70AQ.pdf
SMAT70AQ-13-F
Hersteller: Diodes Incorporated
Description: TVS DIODE 70VWM 100VC SMA
Supplier Device Package: SMA
Voltage - Reverse Standoff (Typ): 70V
Current - Peak Pulse (10/1000µs): 3.5A
Capacitance @ Frequency: 140pF @ 1MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 100V
Voltage - Breakdown (Min): 77.8V
Unidirectional Channels: 1
Produkt ist nicht verfügbar
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BSS138K-7-W BSS138K.pdf
BSS138K-7-W
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 50V 310MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 310mA (Ta)
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 220mA, 10V
Power Dissipation (Max): 380mW
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 0.95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 23.2 pF @ 25 V
auf Bestellung 897000 Stücke:
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3000+0.084 EUR
6000+0.076 EUR
9000+0.071 EUR
15000+0.066 EUR
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BSS138K-7-W BSS138K.pdf
BSS138K-7-W
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 50V 310MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 310mA (Ta)
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 220mA, 10V
Power Dissipation (Max): 380mW
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 0.95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 23.2 pF @ 25 V
auf Bestellung 899163 Stücke:
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44+0.4 EUR
70+0.25 EUR
113+0.16 EUR
500+0.11 EUR
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DMT6012LFDFQ-7 DMT6012LFDFQ.pdf
DMT6012LFDFQ-7
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 41V~60V U-DFN2020-
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta)
Rds On (Max) @ Id, Vgs: 14mOhm @ 8.5A, 10V
Power Dissipation (Max): 900mW (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 13.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 30 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BZT52C4V7SQ-13-F BZT52CxxS.pdf
Hersteller: Diodes Incorporated
Description: ZENER DIODE SOD323 T&R 10K
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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FL2500121Z FL.pdf
FL2500121Z
Hersteller: Diodes Incorporated
Description: CRYSTAL 25.0000MHZ 10PF SMD
Height - Seated (Max): 0.031" (0.78mm)
Supplier Device Package: 4-SMD (3.2x2.5)
Operating Mode: Fundamental
Frequency Tolerance: ±20ppm
Frequency Stability: ±20ppm
Operating Temperature: -20°C ~ 70°C
Type: MHz Crystal
Mounting Type: Surface Mount
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Load Capacitance: 10pF
Package / Case: 4-SMD, No Lead
Packaging: Tape & Reel (TR)
Frequency: 25 MHz
ESR (Equivalent Series Resistance): 60 Ohms
Produkt ist nicht verfügbar
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BAW56-7-F-W BAW56.pdf
BAW56-7-F-W
Hersteller: Diodes Incorporated
Description: DIODE ARRAY GP 75V 300MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 300mA (DC)
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 2.5 µA @ 75 V
auf Bestellung 60000 Stücke:
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3000+0.051 EUR
6000+0.046 EUR
9000+0.043 EUR
15000+0.039 EUR
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30000+0.036 EUR
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BAW56-7-F-W BAW56.pdf
BAW56-7-F-W
Hersteller: Diodes Incorporated
Description: DIODE ARRAY GP 75V 300MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 300mA (DC)
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 2.5 µA @ 75 V
auf Bestellung 61275 Stücke:
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72+0.25 EUR
112+0.16 EUR
180+0.098 EUR
500+0.071 EUR
1000+0.062 EUR
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BAW56WQ-7-F BAW56W.pdf
BAW56WQ-7-F
Hersteller: Diodes Incorporated
Description: DIODE ARRAY GP 75V 150MA SOT-323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 150mA
Supplier Device Package: SOT-323
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 2.5 µA @ 75 V
Qualification: AEC-Q101
auf Bestellung 1750 Stücke:
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AnzahlPreis
46+0.39 EUR
75+0.24 EUR
120+0.15 EUR
500+0.11 EUR
1000+0.096 EUR
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MBRF20150CTL MBRF20150CTL%20N0150%20REV.B.pdf
Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY ITO220AB
Packaging: Tube
Produkt ist nicht verfügbar
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STPS1060 STPS1060.pdf
STPS1060
Hersteller: Diodes Incorporated
Description: DIODE ARRAY GP 600V 5A ITO220AB
Packaging: Bulk
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: ITO220AB (Type WX2)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Produkt ist nicht verfügbar
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DDTA124XUA-7 ds30326.pdf
DDTA124XUA-7
Hersteller: Diodes Incorporated
Description: TRANS PREBIAS PNP 200MW SOT323
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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DDTA124XCA-7 ds30334.pdf
DDTA124XCA-7
Hersteller: Diodes Incorporated
Description: TRANS PREBIAS PNP 200MW SOT23-3
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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DMN2050LQ-7 DMN2050LQ.pdf
DMN2050LQ-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 20V 5.9A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.9A (Ta)
Rds On (Max) @ Id, Vgs: 29mOhm @ 5A, 4.5V
Power Dissipation (Max): 1.4W
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: SOT-23-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 2V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 532 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 27000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3000+0.27 EUR
6000+0.24 EUR
9000+0.23 EUR
15000+0.22 EUR
21000+0.21 EUR
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DMN2050LQ-7 DMN2050LQ.pdf
DMN2050LQ-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 20V 5.9A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.9A (Ta)
Rds On (Max) @ Id, Vgs: 29mOhm @ 5A, 4.5V
Power Dissipation (Max): 1.4W
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: SOT-23-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 2V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 532 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 27000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
15+1.18 EUR
25+0.73 EUR
100+0.47 EUR
500+0.36 EUR
1000+0.32 EUR
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BZT52C24TQ-7-F ds30502.pdf
BZT52C24TQ-7-F
Hersteller: Diodes Incorporated
Description: DIODE ZENER 24V 300MW SOD523
Packaging: Tape & Reel (TR)
Tolerance: ±5.83%
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 70 Ohms
Supplier Device Package: SOD-523
Grade: Automotive
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 16.8 V
Qualification: AEC-Q101
auf Bestellung 819000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3000+0.076 EUR
6000+0.068 EUR
9000+0.064 EUR
15000+0.059 EUR
21000+0.057 EUR
30000+0.054 EUR
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BZT52C24TQ-7-F ds30502.pdf
BZT52C24TQ-7-F
Hersteller: Diodes Incorporated
Description: DIODE ZENER 24V 300MW SOD523
Packaging: Cut Tape (CT)
Tolerance: ±5.83%
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 70 Ohms
Supplier Device Package: SOD-523
Grade: Automotive
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 16.8 V
Qualification: AEC-Q101
auf Bestellung 819845 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
48+0.37 EUR
77+0.23 EUR
125+0.14 EUR
500+0.1 EUR
1000+0.092 EUR
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DDZX24C-13 ds30408.pdf
DDZX24C-13
Hersteller: Diodes Incorporated
Description: DIODE ZENER 24V 300MW SOT23
Current - Reverse Leakage @ Vr: 50 nA @ 19 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 300 mW
Supplier Device Package: SOT-23-3
Impedance (Max) (Zzt): 35 Ohms
Voltage - Zener (Nom) (Vz): 24 V
Operating Temperature: -65°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Tolerance: ±3%
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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DDZX24C-13 ds30408.pdf
DDZX24C-13
Hersteller: Diodes Incorporated
Description: DIODE ZENER 24V 300MW SOT23
Current - Reverse Leakage @ Vr: 50 nA @ 19 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 300 mW
Supplier Device Package: SOT-23-3
Impedance (Max) (Zzt): 35 Ohms
Voltage - Zener (Nom) (Vz): 24 V
Operating Temperature: -65°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Tolerance: ±3%
Packaging: Cut Tape (CT)
auf Bestellung 9900 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
53+0.33 EUR
87+0.2 EUR
141+0.13 EUR
500+0.092 EUR
1000+0.081 EUR
2000+0.071 EUR
5000+0.061 EUR
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