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DMN3060L-13 DMN3060L-13 Diodes Incorporated DMN3060L.pdf Description: MOSFET BVDSS: 25V~30V SOT23 T&R
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 3.1A, 10V
Power Dissipation (Max): 740mW
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 404 pF @ 15 V
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DMN3060L-7 DMN3060L-7 Diodes Incorporated DMN3060L.pdf Description: MOSFET BVDSS: 25V~30V SOT23 T&R
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 3.1A, 10V
Power Dissipation (Max): 740mW
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 404 pF @ 15 V
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DMN3060L-7 DMN3060L-7 Diodes Incorporated DMN3060L.pdf Description: MOSFET BVDSS: 25V~30V SOT23 T&R
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 3.1A, 10V
Power Dissipation (Max): 740mW
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 404 pF @ 15 V
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DMN3060LW-7 DMN3060LW-7 Diodes Incorporated DMN3060LW.pdf Description: MOSFET BVDSS: 25V~30V SOT323 T&R
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 3.1A, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Supplier Device Package: SOT-323
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 5.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 395 pF @ 15 V
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DMN3060LVT-7 DMN3060LVT-7 Diodes Incorporated Description: MOSFET 2N-CH 30V 3.6A TSOT26
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 830mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 395pF @ 15V
Rds On (Max) @ Id, Vgs: 60mOhm @ 3.1A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11.3nC @ 10V
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Supplier Device Package: TSOT-26
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DMN3060LQ-13 DMN3060LQ-13 Diodes Incorporated DMN3060LQ.pdf Description: MOSFET BVDSS: 25V~30V SOT23 T&R
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 3.1A, 10V
Power Dissipation (Max): 740mW
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Supplier Device Package: SOT-23-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 404 pF @ 15 V
Qualification: AEC-Q101
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DMN3060LQ-7 DMN3060LQ-7 Diodes Incorporated DMN3060LQ.pdf Description: MOSFET BVDSS: 25V~30V SOT23 T&R
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 3.1A, 10V
Power Dissipation (Max): 740mW
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Supplier Device Package: SOT-23-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 404 pF @ 15 V
Qualification: AEC-Q101
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BC856A-7-F-W BC856A-7-F-W Diodes Incorporated BC856A.pdf Description: TRANS PNP 65V 0.1A SOT-23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 2mA, 5V
Frequency - Transition: 200MHz
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 300 mW
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BC856A-7-F-W BC856A-7-F-W Diodes Incorporated BC856A.pdf Description: TRANS PNP 65V 0.1A SOT-23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 2mA, 5V
Frequency - Transition: 200MHz
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 300 mW
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74LVC1G17FX4-7 74LVC1G17FX4-7 Diodes Incorporated 74LVC1G17.pdf Description: IC BUFF 1.65V X2-DFN1409-6
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Input Type: Schmitt Trigger
Number of Bits per Element: 1
Current - Output High, Low: 32mA, 32mA
Supplier Device Package: X2-DFN1409-6
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74LVC1G17FX4-7 74LVC1G17FX4-7 Diodes Incorporated 74LVC1G17.pdf Description: IC BUFF 1.65V X2-DFN1409-6
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Input Type: Schmitt Trigger
Number of Bits per Element: 1
Current - Output High, Low: 32mA, 32mA
Supplier Device Package: X2-DFN1409-6
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BSS84-7-F-W BSS84-7-F-W Diodes Incorporated BSS84.pdf Description: MOSFET P-CH 50V 130MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 130mA (Ta)
Rds On (Max) @ Id, Vgs: 10Ohm @ 100mA, 5V
Power Dissipation (Max): 300mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Input Capacitance (Ciss) (Max) @ Vds: 45 pF @ 25 V
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BSS84-7-F-W BSS84-7-F-W Diodes Incorporated BSS84.pdf Description: MOSFET P-CH 50V 130MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 130mA (Ta)
Rds On (Max) @ Id, Vgs: 10Ohm @ 100mA, 5V
Power Dissipation (Max): 300mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Input Capacitance (Ciss) (Max) @ Vds: 45 pF @ 25 V
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SMBJ13CAQ-13-F SMBJ13CAQ-13-F Diodes Incorporated ds40740.pdf Description: IC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 27.9A
Voltage - Reverse Standoff (Typ): 13V
Supplier Device Package: SMB
Bidirectional Channels: 1
Voltage - Breakdown (Min): 14.4V
Voltage - Clamping (Max) @ Ipp: 21.5V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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SMBJ13CAQ-13-F SMBJ13CAQ-13-F Diodes Incorporated ds40740.pdf Description: IC
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 27.9A
Voltage - Reverse Standoff (Typ): 13V
Supplier Device Package: SMB
Bidirectional Channels: 1
Voltage - Breakdown (Min): 14.4V
Voltage - Clamping (Max) @ Ipp: 21.5V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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G8327A049 G8327A049 Diodes Incorporated G8.pdf Description: CRYSTAL PLASTIC SMD3215
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Load Capacitance: 7pF
Size / Dimension: 0.126" L x 0.059" W (3.20mm x 1.50mm)
Mounting Type: Surface Mount
Type: kHz Crystal (Tuning Fork)
Operating Temperature: -40°C ~ 85°C
Frequency Tolerance: ±10ppm
Operating Mode: Fundamental
Height - Seated (Max): 0.035" (0.90mm)
ESR (Equivalent Series Resistance): 70 kOhms
Frequency: 32.768 kHz
Supplier Device Package: 2-SMD (3.2x1.5)
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G8327A039 G8327A039 Diodes Incorporated G8.pdf Description: CRYSTAL PLASTIC SMD3215
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Load Capacitance: 7pF
Size / Dimension: 0.126" L x 0.059" W (3.20mm x 1.50mm)
Mounting Type: Surface Mount
Type: kHz Crystal (Tuning Fork)
Operating Temperature: -40°C ~ 85°C
Frequency Tolerance: ±20ppm
Operating Mode: Fundamental
Height - Seated (Max): 0.035" (0.90mm)
ESR (Equivalent Series Resistance): 50 kOhms
Frequency: 32.768 kHz
Supplier Device Package: 2-SMD (3.2x1.5)
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G8327A047 G8327A047 Diodes Incorporated G8.pdf Description: CRYSTAL PLASTIC SMD3215
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Load Capacitance: 9pF
Size / Dimension: 0.126" L x 0.059" W (3.20mm x 1.50mm)
Mounting Type: Surface Mount
Type: kHz Crystal (Tuning Fork)
Operating Temperature: -40°C ~ 85°C
Frequency Tolerance: ±20ppm
Operating Mode: Fundamental
Height - Seated (Max): 0.035" (0.90mm)
ESR (Equivalent Series Resistance): 70 kOhms
Frequency: 32.768 kHz
Supplier Device Package: 2-SMD (3.2x1.5)
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G8327A048 G8327A048 Diodes Incorporated G8.pdf Description: CRYSTAL PLASTIC SMD3215
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Load Capacitance: 7pF
Size / Dimension: 0.126" L x 0.059" W (3.20mm x 1.50mm)
Mounting Type: Surface Mount
Type: kHz Crystal (Tuning Fork)
Operating Temperature: -40°C ~ 85°C
Frequency Tolerance: ±20ppm
Operating Mode: Fundamental
Height - Seated (Max): 0.035" (0.90mm)
ESR (Equivalent Series Resistance): 70 kOhms
Frequency: 32.768 kHz
Supplier Device Package: 2-SMD (3.2x1.5)
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MBRF10200CT MBRF10200CT Diodes Incorporated MBR%28F%2910200CT.pdf Description: DIODE ARR SCHOT 200V 5A ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 910 mV @ 5 A
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
Qualification: AEC-Q101
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DTHP60B07PT Diodes Incorporated DTHP60B07PT.pdf Description: FRED PLANAR RECTIFIER TO247 TUBE
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 70 ns
Technology: Standard
Current - Average Rectified (Io): 60A
Supplier Device Package: TO-247-2 (Type WX)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 60 A
Current - Reverse Leakage @ Vr: 100 µA @ 650 V
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DTHP60B07PTQ Diodes Incorporated DTHP60B07PTQ.pdf Description: FRED PLANAR RECTIFIER TO247 TUBE
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 70 ns
Technology: Standard
Current - Average Rectified (Io): 60A
Supplier Device Package: TO-247-2 (Type WX)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 60 A
Current - Reverse Leakage @ Vr: 100 µA @ 650 V
Qualification: AEC-Q101
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DMTH6012LPSWQ-13 DMTH6012LPSWQ-13 Diodes Incorporated DMTH6012LPSWQ.pdf Description: MOSFET N-CH 60V 11.5/50.5A PWRDI
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta), 50.5A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 20A, 10V
Power Dissipation (Max): 2.8W (Ta), 53.6W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type Q)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 13.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 30 V
Qualification: AEC-Q101
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DMTH6015LPDWQ-13 DMTH6015LPDWQ-13 Diodes Incorporated DMTH6015LPDWQ.pdf Description: MOSFET 2N-CH 60V 9.4A PWRDI50
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.6W (Ta), 39.5W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta), 36.3A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 825pF @ 30V
Rds On (Max) @ Id, Vgs: 20mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 14.3nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type UXD)
Grade: Automotive
Qualification: AEC-Q101
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DMTH6015LPDWQ-13 DMTH6015LPDWQ-13 Diodes Incorporated DMTH6015LPDWQ.pdf Description: MOSFET 2N-CH 60V 9.4A PWRDI50
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.6W (Ta), 39.5W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta), 36.3A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 825pF @ 30V
Rds On (Max) @ Id, Vgs: 20mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 14.3nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type UXD)
Grade: Automotive
Qualification: AEC-Q101
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DMTH6010LPSWQ-13 DMTH6010LPSWQ-13 Diodes Incorporated DMTH6010LPSWQ.pdf Description: MOSFET N-CH 60V 15.5A/80A PWRDI
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.5A (Ta), 80A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V
Power Dissipation (Max): 2.9W (Ta), 75W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type Q)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 41.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2090 pF @ 30 V
Qualification: AEC-Q101
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DMTH6016LK3Q-13 DMTH6016LK3Q-13 Diodes Incorporated DMTH6016LK3Q.pdf Description: MOSFET N-CH 60V 10.8 TO252 T&R
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.8A (Ta), 46.9A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 10A, 10V
Power Dissipation (Max): 3.2W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 864 pF @ 30 V
Qualification: AEC-Q101
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DMTH6016LK3Q-13 DMTH6016LK3Q-13 Diodes Incorporated DMTH6016LK3Q.pdf Description: MOSFET N-CH 60V 10.8 TO252 T&R
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.8A (Ta), 46.9A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 10A, 10V
Power Dissipation (Max): 3.2W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 864 pF @ 30 V
Qualification: AEC-Q101
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DMT36M4LDT-7A Diodes Incorporated DMT36M4LDT.pdf Description: MOSFET BVDSS: 25V~30V V-DFN3030-
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.04W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta), 14.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 1092pF @ 15V, 1644pF @ 15V
Rds On (Max) @ Id, Vgs: 11.6mOhm @ 10A, 10V, 6.4mOhm @ 16A, 10V
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V, 23.3nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: V-DFN3030-8 (Type K)
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MBR1045 MBR1045 Diodes Incorporated ds23009.pdf Description: DIODE SCHOTTKY 45V 10A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 400pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 45 V
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LM2901QT14-13 LM2901QT14-13 Diodes Incorporated LM2901Q_03Q.pdf Description: IC COMPARATOR 4CH 14-TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Output Type: CMOS, TTL
Mounting Type: Surface Mount
Number of Elements: 4
Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 125°C
Voltage - Supply, Single/Dual (±): 2V ~ 36V, ±1V ~ 18V
Supplier Device Package: 14-TSSOP
Current - Quiescent (Max): 2.5mA
Voltage - Input Offset (Max): 7mV @ 5V
Current - Input Bias (Max): 0.25µA @ 5V
Current - Output (Typ): 16mA @ 5V
Grade: Automotive
Qualification: AEC-Q100
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LM2901QT14-13 LM2901QT14-13 Diodes Incorporated LM2901Q_03Q.pdf Description: IC COMPARATOR 4CH 14-TSSOP
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Output Type: CMOS, TTL
Mounting Type: Surface Mount
Number of Elements: 4
Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 125°C
Voltage - Supply, Single/Dual (±): 2V ~ 36V, ±1V ~ 18V
Supplier Device Package: 14-TSSOP
Current - Quiescent (Max): 2.5mA
Voltage - Input Offset (Max): 7mV @ 5V
Current - Input Bias (Max): 0.25µA @ 5V
Current - Output (Typ): 16mA @ 5V
Grade: Automotive
Qualification: AEC-Q100
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DESD3V3L1BAQ-7 DESD3V3L1BAQ-7 Diodes Incorporated DESD3V3L1BAQ-DESD24VL1BAQ.pdf Description: TVS DIODE 3.3VWM 10VC SOD323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: HDMI, USB
Capacitance @ Frequency: 56pF @ 100MHz
Current - Peak Pulse (10/1000µs): 23A
Voltage - Reverse Standoff (Typ): 3.3V
Supplier Device Package: SOD-323
Bidirectional Channels: 1
Voltage - Breakdown (Min): 3.75V
Voltage - Clamping (Max) @ Ipp: 10V
Power - Peak Pulse: 230W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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DESD3V3L1BAQ-7 DESD3V3L1BAQ-7 Diodes Incorporated DESD3V3L1BAQ-DESD24VL1BAQ.pdf Description: TVS DIODE 3.3VWM 10VC SOD323
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: HDMI, USB
Capacitance @ Frequency: 56pF @ 100MHz
Current - Peak Pulse (10/1000µs): 23A
Voltage - Reverse Standoff (Typ): 3.3V
Supplier Device Package: SOD-323
Bidirectional Channels: 1
Voltage - Breakdown (Min): 3.75V
Voltage - Clamping (Max) @ Ipp: 10V
Power - Peak Pulse: 230W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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DESD30VF1BL-7B DESD30VF1BL-7B Diodes Incorporated DESD30VF1BL.pdf Description: TVS DIODE 30VWM 13V X1DFN10062
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 0.3pF @ 1MHz
Current - Peak Pulse (10/1000µs): 1A (8/20µs)
Voltage - Reverse Standoff (Typ): 30V (Max)
Supplier Device Package: X1-DFN1006-2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 31V
Voltage - Clamping (Max) @ Ipp: 13V (Typ)
Power Line Protection: No
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DESD30VF1BL-7B DESD30VF1BL-7B Diodes Incorporated DESD30VF1BL.pdf Description: TVS DIODE 30VWM 13V X1DFN10062
Packaging: Cut Tape (CT)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 0.3pF @ 1MHz
Current - Peak Pulse (10/1000µs): 1A (8/20µs)
Voltage - Reverse Standoff (Typ): 30V (Max)
Supplier Device Package: X1-DFN1006-2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 31V
Voltage - Clamping (Max) @ Ipp: 13V (Typ)
Power Line Protection: No
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DMP1005UFDF-7-W DMP1005UFDF-7-W Diodes Incorporated DMP1005UFDF.pdf Description: MOSFET P-CH 12V 26A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 5A, 4.5V
Power Dissipation (Max): 2.1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 2475 pF @ 6 V
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DMP1005UFDF-7-W DMP1005UFDF-7-W Diodes Incorporated DMP1005UFDF.pdf Description: MOSFET P-CH 12V 26A 6UDFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 5A, 4.5V
Power Dissipation (Max): 2.1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 2475 pF @ 6 V
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DMP1005UFDF-13 DMP1005UFDF-13 Diodes Incorporated DMP1005UFDF.pdf Description: MOSFET P-CH 12V 26A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 5A, 4.5V
Power Dissipation (Max): 2.1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 2475 pF @ 6 V
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DMP1005UFDF-13 DMP1005UFDF-13 Diodes Incorporated DMP1005UFDF.pdf Description: MOSFET P-CH 12V 26A 6UDFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 5A, 4.5V
Power Dissipation (Max): 2.1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 2475 pF @ 6 V
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DMN29M9UFDF-13 DMN29M9UFDF-13 Diodes Incorporated DMN29M9UFDF.pdf Description: MOSFET BVDSS: 25V~30V U-DFN2020-
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 5A, 4.5V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 14.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 655 pF @ 8 V
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DMN29M9UFDF-7 DMN29M9UFDF-7 Diodes Incorporated DMN29M9UFDF.pdf Description: MOSFET BVDSS: 25V~30V U-DFN2020-
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 5A, 4.5V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 14.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 655 pF @ 8 V
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DMG7401SFGQ-7 DMG7401SFGQ-7 Diodes Incorporated DMG7401SFGQ.pdf Description: MOSFET P-CH 30V 9.8A PWRDI3333-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9.8A (Ta)
Rds On (Max) @ Id, Vgs: 11mOhm @ 12A, 20V
Power Dissipation (Max): 940mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 20V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2987 pF @ 15 V
Qualification: AEC-Q101
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SMF4L58A-7 SMF4L58A-7 Diodes Incorporated ds43394.pdf Description: TVS DIODE 58VWM 93.6VC DO219AA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 4.3A
Voltage - Reverse Standoff (Typ): 58V
Supplier Device Package: DO-219AA
Unidirectional Channels: 1
Voltage - Breakdown (Min): 64.4V
Voltage - Clamping (Max) @ Ipp: 93.6V
Power - Peak Pulse: 400W
Power Line Protection: No
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SMF4L58A-7 SMF4L58A-7 Diodes Incorporated ds43394.pdf Description: TVS DIODE 58VWM 93.6VC DO219AA
Packaging: Cut Tape (CT)
Package / Case: DO-219AA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 4.3A
Voltage - Reverse Standoff (Typ): 58V
Supplier Device Package: DO-219AA
Unidirectional Channels: 1
Voltage - Breakdown (Min): 64.4V
Voltage - Clamping (Max) @ Ipp: 93.6V
Power - Peak Pulse: 400W
Power Line Protection: No
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FX0800015-W Diodes Incorporated F6_FX.pdf Description: CRYSTAL CERAMIC SEAM6035 T&R 1K
Packaging: Tape & Reel (TR)
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FX0800015-W Diodes Incorporated F6_FX.pdf Description: CRYSTAL CERAMIC SEAM6035 T&R 1K
Packaging: Cut Tape (CT)
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100+1.06 EUR
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500+0.95 EUR
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SNC500007 Diodes Incorporated Description: CLOCK SAW OSCILLATOR SEAM7050 T&
Packaging: Tape & Reel (TR)
Type: XO (Standard)
Base Resonator: Crystal
Produkt ist nicht verfügbar
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DSC04C065LP-13 DSC04C065LP-13 Diodes Incorporated Description: SIC SBD 650V~1000V T-DFN8080-5 T
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 163pF @ 100mV, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: DFN8080
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 4 A
Current - Reverse Leakage @ Vr: 20 µA @ 650 V
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DSC04C065LP-13 DSC04C065LP-13 Diodes Incorporated Description: SIC SBD 650V~1000V T-DFN8080-5 T
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 163pF @ 100mV, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: DFN8080
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 4 A
Current - Reverse Leakage @ Vr: 20 µA @ 650 V
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DSC04A065LP-13 DSC04A065LP-13 Diodes Incorporated Description: SIC SBD 650V~1000V T-DFN8080-5 T
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 193pF @ 100mV, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: DFN8080
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 4 A
Current - Reverse Leakage @ Vr: 20 µA @ 650 V
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DSC04A065LP-13 DSC04A065LP-13 Diodes Incorporated Description: SIC SBD 650V~1000V T-DFN8080-5 T
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 193pF @ 100mV, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: DFN8080
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 4 A
Current - Reverse Leakage @ Vr: 20 µA @ 650 V
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DSC08A065LP-13 DSC08A065LP-13 Diodes Incorporated Description: SIC SBD 650V~1000V T-DFN8080-5 T
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 414pF @ 100mV, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: DFN8080
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 8 A
Current - Reverse Leakage @ Vr: 20 µA @ 650 V
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DSC08A065LP-13 DSC08A065LP-13 Diodes Incorporated Description: SIC SBD 650V~1000V T-DFN8080-5 T
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 414pF @ 100mV, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: DFN8080
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 8 A
Current - Reverse Leakage @ Vr: 20 µA @ 650 V
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DSC12A065LP-13 DSC12A065LP-13 Diodes Incorporated DSC12A065LP.pdf Description: SiC SBD 650V~1000V T-DFN8080-4
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 516pF @ 100mV, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: DFN8080
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 12 A
Current - Reverse Leakage @ Vr: 20 µA @ 650 V
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DSC12A065LP-13 DSC12A065LP-13 Diodes Incorporated DSC12A065LP.pdf Description: SiC SBD 650V~1000V T-DFN8080-4
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 516pF @ 100mV, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: DFN8080
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 12 A
Current - Reverse Leakage @ Vr: 20 µA @ 650 V
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MJD45H11-13 MJD45H11-13 Diodes Incorporated MJD45H11.pdf Description: TRANS NPN 80V 8A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 2A, 1V
Frequency - Transition: 3MHz
Supplier Device Package: TO-252 (DPAK)
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.5 W
Produkt ist nicht verfügbar
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BZT52C39Q-7-F BZT52C39Q-7-F Diodes Incorporated ds18004.pdf Description: DIODE ZENER 39V 370MW SOD123
Packaging: Cut Tape (CT)
Tolerance: ±5.13%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 39 V
Impedance (Max) (Zzt): 130 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 370 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 27.3 V
Qualification: AEC-Q101
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ZHCS1000TC ZHCS1000TC Diodes Incorporated ZHCS1000.pdf Description: DIODE SCHOTTKY 40V 1A SOT233
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 12 ns
Technology: Schottky
Capacitance @ Vr, F: 25pF @ 25V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A
Current - Reverse Leakage @ Vr: 100 µA @ 30 V
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ZHCS1000TC ZHCS1000TC Diodes Incorporated ZHCS1000.pdf Description: DIODE SCHOTTKY 40V 1A SOT233
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 12 ns
Technology: Schottky
Capacitance @ Vr, F: 25pF @ 25V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A
Current - Reverse Leakage @ Vr: 100 µA @ 30 V
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DMN3060L-13 DMN3060L.pdf
DMN3060L-13
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 25V~30V SOT23 T&R
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 3.1A, 10V
Power Dissipation (Max): 740mW
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 404 pF @ 15 V
auf Bestellung 49990 Stücke:
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40+0.52 EUR
65+0.32 EUR
104+0.2 EUR
500+0.15 EUR
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2000+0.12 EUR
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DMN3060L-7 DMN3060L.pdf
DMN3060L-7
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 25V~30V SOT23 T&R
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 3.1A, 10V
Power Dissipation (Max): 740mW
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 404 pF @ 15 V
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3000+0.11 EUR
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DMN3060L-7 DMN3060L.pdf
DMN3060L-7
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 25V~30V SOT23 T&R
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 3.1A, 10V
Power Dissipation (Max): 740mW
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 404 pF @ 15 V
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40+0.52 EUR
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104+0.2 EUR
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DMN3060LW-7 DMN3060LW.pdf
DMN3060LW-7
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 25V~30V SOT323 T&R
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 3.1A, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Supplier Device Package: SOT-323
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 5.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 395 pF @ 15 V
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DMN3060LVT-7
DMN3060LVT-7
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 30V 3.6A TSOT26
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 830mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 395pF @ 15V
Rds On (Max) @ Id, Vgs: 60mOhm @ 3.1A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11.3nC @ 10V
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Supplier Device Package: TSOT-26
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DMN3060LQ-13 DMN3060LQ.pdf
DMN3060LQ-13
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 25V~30V SOT23 T&R
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 3.1A, 10V
Power Dissipation (Max): 740mW
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Supplier Device Package: SOT-23-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 404 pF @ 15 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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DMN3060LQ-7 DMN3060LQ.pdf
DMN3060LQ-7
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 25V~30V SOT23 T&R
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 3.1A, 10V
Power Dissipation (Max): 740mW
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Supplier Device Package: SOT-23-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 404 pF @ 15 V
Qualification: AEC-Q101
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3000+0.12 EUR
6000+0.11 EUR
9000+0.1 EUR
15000+0.099 EUR
21000+0.094 EUR
30000+0.09 EUR
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BC856A-7-F-W BC856A.pdf
BC856A-7-F-W
Hersteller: Diodes Incorporated
Description: TRANS PNP 65V 0.1A SOT-23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 2mA, 5V
Frequency - Transition: 200MHz
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 300 mW
Produkt ist nicht verfügbar
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BC856A-7-F-W BC856A.pdf
BC856A-7-F-W
Hersteller: Diodes Incorporated
Description: TRANS PNP 65V 0.1A SOT-23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 2mA, 5V
Frequency - Transition: 200MHz
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 300 mW
Produkt ist nicht verfügbar
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74LVC1G17FX4-7 74LVC1G17.pdf
74LVC1G17FX4-7
Hersteller: Diodes Incorporated
Description: IC BUFF 1.65V X2-DFN1409-6
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Input Type: Schmitt Trigger
Number of Bits per Element: 1
Current - Output High, Low: 32mA, 32mA
Supplier Device Package: X2-DFN1409-6
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AnzahlPrivatkunde
5000+0.19 EUR
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74LVC1G17FX4-7 74LVC1G17.pdf
74LVC1G17FX4-7
Hersteller: Diodes Incorporated
Description: IC BUFF 1.65V X2-DFN1409-6
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Input Type: Schmitt Trigger
Number of Bits per Element: 1
Current - Output High, Low: 32mA, 32mA
Supplier Device Package: X2-DFN1409-6
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Lieferzeit 10-14 Tag (e)
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46+0.46 EUR
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74+0.29 EUR
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250+0.23 EUR
500+0.21 EUR
1000+0.2 EUR
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BSS84-7-F-W BSS84.pdf
BSS84-7-F-W
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 50V 130MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 130mA (Ta)
Rds On (Max) @ Id, Vgs: 10Ohm @ 100mA, 5V
Power Dissipation (Max): 300mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Input Capacitance (Ciss) (Max) @ Vds: 45 pF @ 25 V
Produkt ist nicht verfügbar
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BSS84-7-F-W BSS84.pdf
BSS84-7-F-W
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 50V 130MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 130mA (Ta)
Rds On (Max) @ Id, Vgs: 10Ohm @ 100mA, 5V
Power Dissipation (Max): 300mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Input Capacitance (Ciss) (Max) @ Vds: 45 pF @ 25 V
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SMBJ13CAQ-13-F ds40740.pdf
SMBJ13CAQ-13-F
Hersteller: Diodes Incorporated
Description: IC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 27.9A
Voltage - Reverse Standoff (Typ): 13V
Supplier Device Package: SMB
Bidirectional Channels: 1
Voltage - Breakdown (Min): 14.4V
Voltage - Clamping (Max) @ Ipp: 21.5V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SMBJ13CAQ-13-F ds40740.pdf
SMBJ13CAQ-13-F
Hersteller: Diodes Incorporated
Description: IC
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 27.9A
Voltage - Reverse Standoff (Typ): 13V
Supplier Device Package: SMB
Bidirectional Channels: 1
Voltage - Breakdown (Min): 14.4V
Voltage - Clamping (Max) @ Ipp: 21.5V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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G8327A049 G8.pdf
G8327A049
Hersteller: Diodes Incorporated
Description: CRYSTAL PLASTIC SMD3215
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Load Capacitance: 7pF
Size / Dimension: 0.126" L x 0.059" W (3.20mm x 1.50mm)
Mounting Type: Surface Mount
Type: kHz Crystal (Tuning Fork)
Operating Temperature: -40°C ~ 85°C
Frequency Tolerance: ±10ppm
Operating Mode: Fundamental
Height - Seated (Max): 0.035" (0.90mm)
ESR (Equivalent Series Resistance): 70 kOhms
Frequency: 32.768 kHz
Supplier Device Package: 2-SMD (3.2x1.5)
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G8327A039 G8.pdf
G8327A039
Hersteller: Diodes Incorporated
Description: CRYSTAL PLASTIC SMD3215
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Load Capacitance: 7pF
Size / Dimension: 0.126" L x 0.059" W (3.20mm x 1.50mm)
Mounting Type: Surface Mount
Type: kHz Crystal (Tuning Fork)
Operating Temperature: -40°C ~ 85°C
Frequency Tolerance: ±20ppm
Operating Mode: Fundamental
Height - Seated (Max): 0.035" (0.90mm)
ESR (Equivalent Series Resistance): 50 kOhms
Frequency: 32.768 kHz
Supplier Device Package: 2-SMD (3.2x1.5)
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G8327A047 G8.pdf
G8327A047
Hersteller: Diodes Incorporated
Description: CRYSTAL PLASTIC SMD3215
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Load Capacitance: 9pF
Size / Dimension: 0.126" L x 0.059" W (3.20mm x 1.50mm)
Mounting Type: Surface Mount
Type: kHz Crystal (Tuning Fork)
Operating Temperature: -40°C ~ 85°C
Frequency Tolerance: ±20ppm
Operating Mode: Fundamental
Height - Seated (Max): 0.035" (0.90mm)
ESR (Equivalent Series Resistance): 70 kOhms
Frequency: 32.768 kHz
Supplier Device Package: 2-SMD (3.2x1.5)
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G8327A048 G8.pdf
G8327A048
Hersteller: Diodes Incorporated
Description: CRYSTAL PLASTIC SMD3215
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Load Capacitance: 7pF
Size / Dimension: 0.126" L x 0.059" W (3.20mm x 1.50mm)
Mounting Type: Surface Mount
Type: kHz Crystal (Tuning Fork)
Operating Temperature: -40°C ~ 85°C
Frequency Tolerance: ±20ppm
Operating Mode: Fundamental
Height - Seated (Max): 0.035" (0.90mm)
ESR (Equivalent Series Resistance): 70 kOhms
Frequency: 32.768 kHz
Supplier Device Package: 2-SMD (3.2x1.5)
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MBRF10200CT MBR%28F%2910200CT.pdf
MBRF10200CT
Hersteller: Diodes Incorporated
Description: DIODE ARR SCHOT 200V 5A ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 910 mV @ 5 A
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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DTHP60B07PT DTHP60B07PT.pdf
Hersteller: Diodes Incorporated
Description: FRED PLANAR RECTIFIER TO247 TUBE
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 70 ns
Technology: Standard
Current - Average Rectified (Io): 60A
Supplier Device Package: TO-247-2 (Type WX)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 60 A
Current - Reverse Leakage @ Vr: 100 µA @ 650 V
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DTHP60B07PTQ DTHP60B07PTQ.pdf
Hersteller: Diodes Incorporated
Description: FRED PLANAR RECTIFIER TO247 TUBE
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 70 ns
Technology: Standard
Current - Average Rectified (Io): 60A
Supplier Device Package: TO-247-2 (Type WX)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 60 A
Current - Reverse Leakage @ Vr: 100 µA @ 650 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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DMTH6012LPSWQ-13 DMTH6012LPSWQ.pdf
DMTH6012LPSWQ-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 11.5/50.5A PWRDI
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta), 50.5A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 20A, 10V
Power Dissipation (Max): 2.8W (Ta), 53.6W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type Q)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 13.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 30 V
Qualification: AEC-Q101
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DMTH6015LPDWQ-13 DMTH6015LPDWQ.pdf
DMTH6015LPDWQ-13
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 60V 9.4A PWRDI50
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.6W (Ta), 39.5W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta), 36.3A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 825pF @ 30V
Rds On (Max) @ Id, Vgs: 20mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 14.3nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type UXD)
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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DMTH6015LPDWQ-13 DMTH6015LPDWQ.pdf
DMTH6015LPDWQ-13
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 60V 9.4A PWRDI50
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.6W (Ta), 39.5W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta), 36.3A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 825pF @ 30V
Rds On (Max) @ Id, Vgs: 20mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 14.3nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type UXD)
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 628 Stücke:
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9+2.44 EUR
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DMTH6010LPSWQ-13 DMTH6010LPSWQ.pdf
DMTH6010LPSWQ-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 15.5A/80A PWRDI
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.5A (Ta), 80A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V
Power Dissipation (Max): 2.9W (Ta), 75W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type Q)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 41.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2090 pF @ 30 V
Qualification: AEC-Q101
auf Bestellung 169637 Stücke:
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DMTH6016LK3Q-13 DMTH6016LK3Q.pdf
DMTH6016LK3Q-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 10.8 TO252 T&R
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.8A (Ta), 46.9A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 10A, 10V
Power Dissipation (Max): 3.2W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 864 pF @ 30 V
Qualification: AEC-Q101
auf Bestellung 372500 Stücke:
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DMTH6016LK3Q-13 DMTH6016LK3Q.pdf
DMTH6016LK3Q-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 10.8 TO252 T&R
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.8A (Ta), 46.9A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 10A, 10V
Power Dissipation (Max): 3.2W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 864 pF @ 30 V
Qualification: AEC-Q101
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DMT36M4LDT-7A DMT36M4LDT.pdf
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 25V~30V V-DFN3030-
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.04W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta), 14.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 1092pF @ 15V, 1644pF @ 15V
Rds On (Max) @ Id, Vgs: 11.6mOhm @ 10A, 10V, 6.4mOhm @ 16A, 10V
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V, 23.3nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: V-DFN3030-8 (Type K)
Produkt ist nicht verfügbar
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MBR1045 ds23009.pdf
MBR1045
Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 45V 10A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 400pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 45 V
Produkt ist nicht verfügbar
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LM2901QT14-13 LM2901Q_03Q.pdf
LM2901QT14-13
Hersteller: Diodes Incorporated
Description: IC COMPARATOR 4CH 14-TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Output Type: CMOS, TTL
Mounting Type: Surface Mount
Number of Elements: 4
Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 125°C
Voltage - Supply, Single/Dual (±): 2V ~ 36V, ±1V ~ 18V
Supplier Device Package: 14-TSSOP
Current - Quiescent (Max): 2.5mA
Voltage - Input Offset (Max): 7mV @ 5V
Current - Input Bias (Max): 0.25µA @ 5V
Current - Output (Typ): 16mA @ 5V
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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LM2901QT14-13 LM2901Q_03Q.pdf
LM2901QT14-13
Hersteller: Diodes Incorporated
Description: IC COMPARATOR 4CH 14-TSSOP
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Output Type: CMOS, TTL
Mounting Type: Surface Mount
Number of Elements: 4
Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 125°C
Voltage - Supply, Single/Dual (±): 2V ~ 36V, ±1V ~ 18V
Supplier Device Package: 14-TSSOP
Current - Quiescent (Max): 2.5mA
Voltage - Input Offset (Max): 7mV @ 5V
Current - Input Bias (Max): 0.25µA @ 5V
Current - Output (Typ): 16mA @ 5V
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 2490 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
40+0.52 EUR
58+0.37 EUR
66+0.32 EUR
100+0.27 EUR
250+0.25 EUR
500+0.24 EUR
1000+0.23 EUR
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DESD3V3L1BAQ-7 DESD3V3L1BAQ-DESD24VL1BAQ.pdf
DESD3V3L1BAQ-7
Hersteller: Diodes Incorporated
Description: TVS DIODE 3.3VWM 10VC SOD323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: HDMI, USB
Capacitance @ Frequency: 56pF @ 100MHz
Current - Peak Pulse (10/1000µs): 23A
Voltage - Reverse Standoff (Typ): 3.3V
Supplier Device Package: SOD-323
Bidirectional Channels: 1
Voltage - Breakdown (Min): 3.75V
Voltage - Clamping (Max) @ Ipp: 10V
Power - Peak Pulse: 230W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.12 EUR
6000+0.081 EUR
9000+0.073 EUR
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DESD3V3L1BAQ-7 DESD3V3L1BAQ-DESD24VL1BAQ.pdf
DESD3V3L1BAQ-7
Hersteller: Diodes Incorporated
Description: TVS DIODE 3.3VWM 10VC SOD323
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: HDMI, USB
Capacitance @ Frequency: 56pF @ 100MHz
Current - Peak Pulse (10/1000µs): 23A
Voltage - Reverse Standoff (Typ): 3.3V
Supplier Device Package: SOD-323
Bidirectional Channels: 1
Voltage - Breakdown (Min): 3.75V
Voltage - Clamping (Max) @ Ipp: 10V
Power - Peak Pulse: 230W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 9112 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
36+0.58 EUR
58+0.37 EUR
100+0.23 EUR
500+0.17 EUR
1000+0.14 EUR
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DESD30VF1BL-7B DESD30VF1BL.pdf
DESD30VF1BL-7B
Hersteller: Diodes Incorporated
Description: TVS DIODE 30VWM 13V X1DFN10062
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 0.3pF @ 1MHz
Current - Peak Pulse (10/1000µs): 1A (8/20µs)
Voltage - Reverse Standoff (Typ): 30V (Max)
Supplier Device Package: X1-DFN1006-2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 31V
Voltage - Clamping (Max) @ Ipp: 13V (Typ)
Power Line Protection: No
Produkt ist nicht verfügbar
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DESD30VF1BL-7B DESD30VF1BL.pdf
DESD30VF1BL-7B
Hersteller: Diodes Incorporated
Description: TVS DIODE 30VWM 13V X1DFN10062
Packaging: Cut Tape (CT)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 0.3pF @ 1MHz
Current - Peak Pulse (10/1000µs): 1A (8/20µs)
Voltage - Reverse Standoff (Typ): 30V (Max)
Supplier Device Package: X1-DFN1006-2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 31V
Voltage - Clamping (Max) @ Ipp: 13V (Typ)
Power Line Protection: No
auf Bestellung 2752 Stücke:
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AnzahlPrivatkunde
34+0.63 EUR
56+0.38 EUR
100+0.23 EUR
500+0.18 EUR
1000+0.13 EUR
2000+0.12 EUR
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DMP1005UFDF-7-W DMP1005UFDF.pdf
DMP1005UFDF-7-W
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 12V 26A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 5A, 4.5V
Power Dissipation (Max): 2.1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 2475 pF @ 6 V
Produkt ist nicht verfügbar
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DMP1005UFDF-7-W DMP1005UFDF.pdf
DMP1005UFDF-7-W
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 12V 26A 6UDFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 5A, 4.5V
Power Dissipation (Max): 2.1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 2475 pF @ 6 V
Produkt ist nicht verfügbar
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DMP1005UFDF-13 DMP1005UFDF.pdf
DMP1005UFDF-13
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 12V 26A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 5A, 4.5V
Power Dissipation (Max): 2.1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 2475 pF @ 6 V
Produkt ist nicht verfügbar
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DMP1005UFDF-13 DMP1005UFDF.pdf
DMP1005UFDF-13
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 12V 26A 6UDFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 5A, 4.5V
Power Dissipation (Max): 2.1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 2475 pF @ 6 V
Produkt ist nicht verfügbar
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DMN29M9UFDF-13 DMN29M9UFDF.pdf
DMN29M9UFDF-13
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 25V~30V U-DFN2020-
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 5A, 4.5V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 14.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 655 pF @ 8 V
Produkt ist nicht verfügbar
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DMN29M9UFDF-7 DMN29M9UFDF.pdf
DMN29M9UFDF-7
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 25V~30V U-DFN2020-
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 5A, 4.5V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 14.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 655 pF @ 8 V
Produkt ist nicht verfügbar
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DMG7401SFGQ-7 DMG7401SFGQ.pdf
DMG7401SFGQ-7
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 30V 9.8A PWRDI3333-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9.8A (Ta)
Rds On (Max) @ Id, Vgs: 11mOhm @ 12A, 20V
Power Dissipation (Max): 940mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 20V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2987 pF @ 15 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SMF4L58A-7 ds43394.pdf
SMF4L58A-7
Hersteller: Diodes Incorporated
Description: TVS DIODE 58VWM 93.6VC DO219AA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 4.3A
Voltage - Reverse Standoff (Typ): 58V
Supplier Device Package: DO-219AA
Unidirectional Channels: 1
Voltage - Breakdown (Min): 64.4V
Voltage - Clamping (Max) @ Ipp: 93.6V
Power - Peak Pulse: 400W
Power Line Protection: No
auf Bestellung 9000 Stücke:
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3000+0.19 EUR
6000+0.17 EUR
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SMF4L58A-7 ds43394.pdf
SMF4L58A-7
Hersteller: Diodes Incorporated
Description: TVS DIODE 58VWM 93.6VC DO219AA
Packaging: Cut Tape (CT)
Package / Case: DO-219AA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 4.3A
Voltage - Reverse Standoff (Typ): 58V
Supplier Device Package: DO-219AA
Unidirectional Channels: 1
Voltage - Breakdown (Min): 64.4V
Voltage - Clamping (Max) @ Ipp: 93.6V
Power - Peak Pulse: 400W
Power Line Protection: No
auf Bestellung 9000 Stücke:
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25+0.86 EUR
40+0.54 EUR
100+0.33 EUR
500+0.25 EUR
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FX0800015-W F6_FX.pdf
Hersteller: Diodes Incorporated
Description: CRYSTAL CERAMIC SEAM6035 T&R 1K
Packaging: Tape & Reel (TR)
auf Bestellung 1000 Stücke:
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AnzahlPrivatkunde
1000+0.92 EUR
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FX0800015-W F6_FX.pdf
Hersteller: Diodes Incorporated
Description: CRYSTAL CERAMIC SEAM6035 T&R 1K
Packaging: Cut Tape (CT)
auf Bestellung 1000 Stücke:
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12+1.84 EUR
16+1.33 EUR
25+1.2 EUR
100+1.06 EUR
250+0.99 EUR
500+0.95 EUR
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SNC500007
Hersteller: Diodes Incorporated
Description: CLOCK SAW OSCILLATOR SEAM7050 T&
Packaging: Tape & Reel (TR)
Type: XO (Standard)
Base Resonator: Crystal
Produkt ist nicht verfügbar
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DSC04C065LP-13
DSC04C065LP-13
Hersteller: Diodes Incorporated
Description: SIC SBD 650V~1000V T-DFN8080-5 T
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 163pF @ 100mV, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: DFN8080
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 4 A
Current - Reverse Leakage @ Vr: 20 µA @ 650 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2500+1.63 EUR
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DSC04C065LP-13
DSC04C065LP-13
Hersteller: Diodes Incorporated
Description: SIC SBD 650V~1000V T-DFN8080-5 T
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 163pF @ 100mV, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: DFN8080
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 4 A
Current - Reverse Leakage @ Vr: 20 µA @ 650 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
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4+5.32 EUR
10+3.46 EUR
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DSC04A065LP-13
DSC04A065LP-13
Hersteller: Diodes Incorporated
Description: SIC SBD 650V~1000V T-DFN8080-5 T
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 193pF @ 100mV, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: DFN8080
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 4 A
Current - Reverse Leakage @ Vr: 20 µA @ 650 V
auf Bestellung 2500 Stücke:
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AnzahlPrivatkunde
2500+2.2 EUR
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DSC04A065LP-13
DSC04A065LP-13
Hersteller: Diodes Incorporated
Description: SIC SBD 650V~1000V T-DFN8080-5 T
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 193pF @ 100mV, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: DFN8080
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 4 A
Current - Reverse Leakage @ Vr: 20 µA @ 650 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+6.66 EUR
10+4.36 EUR
100+3.05 EUR
500+2.69 EUR
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DSC08A065LP-13
DSC08A065LP-13
Hersteller: Diodes Incorporated
Description: SIC SBD 650V~1000V T-DFN8080-5 T
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 414pF @ 100mV, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: DFN8080
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 8 A
Current - Reverse Leakage @ Vr: 20 µA @ 650 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2500+3.22 EUR
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DSC08A065LP-13
DSC08A065LP-13
Hersteller: Diodes Incorporated
Description: SIC SBD 650V~1000V T-DFN8080-5 T
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 414pF @ 100mV, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: DFN8080
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 8 A
Current - Reverse Leakage @ Vr: 20 µA @ 650 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+8.82 EUR
10+5.85 EUR
100+4.16 EUR
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DSC12A065LP-13 DSC12A065LP.pdf
DSC12A065LP-13
Hersteller: Diodes Incorporated
Description: SiC SBD 650V~1000V T-DFN8080-4
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 516pF @ 100mV, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: DFN8080
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 12 A
Current - Reverse Leakage @ Vr: 20 µA @ 650 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2500+4.31 EUR
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DSC12A065LP-13 DSC12A065LP.pdf
DSC12A065LP-13
Hersteller: Diodes Incorporated
Description: SiC SBD 650V~1000V T-DFN8080-4
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 516pF @ 100mV, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: DFN8080
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 12 A
Current - Reverse Leakage @ Vr: 20 µA @ 650 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+10.95 EUR
10+7.34 EUR
100+5.31 EUR
500+5.27 EUR
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MJD45H11-13 MJD45H11.pdf
MJD45H11-13
Hersteller: Diodes Incorporated
Description: TRANS NPN 80V 8A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 2A, 1V
Frequency - Transition: 3MHz
Supplier Device Package: TO-252 (DPAK)
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.5 W
Produkt ist nicht verfügbar
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BZT52C39Q-7-F ds18004.pdf
BZT52C39Q-7-F
Hersteller: Diodes Incorporated
Description: DIODE ZENER 39V 370MW SOD123
Packaging: Cut Tape (CT)
Tolerance: ±5.13%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 39 V
Impedance (Max) (Zzt): 130 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 370 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 27.3 V
Qualification: AEC-Q101
auf Bestellung 2490 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
91+0.23 EUR
134+0.15 EUR
281+0.075 EUR
500+0.074 EUR
1000+0.073 EUR
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ZHCS1000TC ZHCS1000.pdf
ZHCS1000TC
Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 40V 1A SOT233
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 12 ns
Technology: Schottky
Capacitance @ Vr, F: 25pF @ 25V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A
Current - Reverse Leakage @ Vr: 100 µA @ 30 V
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
10000+0.31 EUR
20000+0.29 EUR
Mindestbestellmenge: 10000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
ZHCS1000TC ZHCS1000.pdf
ZHCS1000TC
Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 40V 1A SOT233
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 12 ns
Technology: Schottky
Capacitance @ Vr, F: 25pF @ 25V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A
Current - Reverse Leakage @ Vr: 100 µA @ 30 V
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
14+1.52 EUR
22+0.95 EUR
100+0.62 EUR
500+0.48 EUR
1000+0.43 EUR
2000+0.39 EUR
5000+0.36 EUR
Mindestbestellmenge: 14 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
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