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AHE108F-W4C-7 AHE108F-W4C-7 Diodes Incorporated AHE108.pdf Description: HALL ELEMENT SOT23-4C T&R 4K
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Axis: Single
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V
Technology: Hall Effect
Current - Supply (Max): 20mA
Supplier Device Package: SOT-23-4 (Type C)
auf Bestellung 3940 Stücke:
Lieferzeit 10-14 Tag (e)
56+0.32 EUR
65+0.27 EUR
70+0.25 EUR
76+0.23 EUR
80+0.22 EUR
100+0.21 EUR
500+0.19 EUR
1000+0.18 EUR
Mindestbestellmenge: 56
Im Einkaufswagen  Stück im Wert von  UAH
AHE108G-W4C-7 AHE108G-W4C-7 Diodes Incorporated AHE108.pdf Description: HALL ELEMENT SOT23-4C T&R 4K
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Axis: Single
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V
Technology: Hall Effect
Current - Supply (Max): 20mA
Supplier Device Package: SOT-23-4 (Type C)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AHE108G-W4C-7 AHE108G-W4C-7 Diodes Incorporated AHE108.pdf Description: HALL ELEMENT SOT23-4C T&R 4K
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Axis: Single
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V
Technology: Hall Effect
Current - Supply (Max): 20mA
Supplier Device Package: SOT-23-4 (Type C)
auf Bestellung 3940 Stücke:
Lieferzeit 10-14 Tag (e)
56+0.32 EUR
65+0.27 EUR
70+0.25 EUR
76+0.23 EUR
80+0.22 EUR
100+0.21 EUR
500+0.19 EUR
1000+0.18 EUR
Mindestbestellmenge: 56
Im Einkaufswagen  Stück im Wert von  UAH
AHE108E-W4C-7 AHE108E-W4C-7 Diodes Incorporated AHE108.pdf Description: HALL ELEMENT SOT23-4C T&R 4K
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Axis: Single
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V
Technology: Hall Effect
Current - Supply (Max): 20mA
Supplier Device Package: SOT-23-4 (Type C)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AHE108E-W4C-7 AHE108E-W4C-7 Diodes Incorporated AHE108.pdf Description: HALL ELEMENT SOT23-4C T&R 4K
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Axis: Single
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V
Technology: Hall Effect
Current - Supply (Max): 20mA
Supplier Device Package: SOT-23-4 (Type C)
auf Bestellung 3940 Stücke:
Lieferzeit 10-14 Tag (e)
56+0.32 EUR
65+0.27 EUR
70+0.25 EUR
76+0.23 EUR
80+0.22 EUR
100+0.21 EUR
500+0.19 EUR
1000+0.18 EUR
Mindestbestellmenge: 56
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AHE108D-W4C-7 AHE108D-W4C-7 Diodes Incorporated AHE108.pdf Description: HALL ELEMENT SOT23-4C T&R 4K
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Axis: Single
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V
Technology: Hall Effect
Current - Supply (Max): 20mA
Supplier Device Package: SOT-23-4 (Type C)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AHE108D-W4C-7 AHE108D-W4C-7 Diodes Incorporated AHE108.pdf Description: HALL ELEMENT SOT23-4C T&R 4K
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Axis: Single
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V
Technology: Hall Effect
Current - Supply (Max): 20mA
Supplier Device Package: SOT-23-4 (Type C)
auf Bestellung 3940 Stücke:
Lieferzeit 10-14 Tag (e)
56+0.32 EUR
65+0.27 EUR
70+0.25 EUR
76+0.23 EUR
80+0.22 EUR
100+0.21 EUR
500+0.19 EUR
1000+0.18 EUR
Mindestbestellmenge: 56
Im Einkaufswagen  Stück im Wert von  UAH
AHE101C-W4A-7 AHE101C-W4A-7 Diodes Incorporated AHE101.pdf Description: HALL ELEMENT SOT23-4A T&R 3K
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Axis: Single
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V
Technology: Hall Effect
Current - Supply (Max): 20mA
Supplier Device Package: SOT-23-4 (Type A)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.17 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
AHE101C-W4A-7 AHE101C-W4A-7 Diodes Incorporated AHE101.pdf Description: HALL ELEMENT SOT23-4A T&R 3K
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Axis: Single
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V
Technology: Hall Effect
Current - Supply (Max): 20mA
Supplier Device Package: SOT-23-4 (Type A)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
56+0.32 EUR
65+0.27 EUR
70+0.25 EUR
76+0.23 EUR
80+0.22 EUR
100+0.21 EUR
500+0.19 EUR
1000+0.18 EUR
Mindestbestellmenge: 56
Im Einkaufswagen  Stück im Wert von  UAH
AHE101H-W4A-7 AHE101H-W4A-7 Diodes Incorporated AHE101.pdf Description: HALL ELEMENT SOT23-4A T&R 3K
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Axis: Single
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V
Technology: Hall Effect
Current - Supply (Max): 20mA
Supplier Device Package: SOT-23-4 (Type A)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.17 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
AHE101H-W4A-7 AHE101H-W4A-7 Diodes Incorporated AHE101.pdf Description: HALL ELEMENT SOT23-4A T&R 3K
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Axis: Single
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V
Technology: Hall Effect
Current - Supply (Max): 20mA
Supplier Device Package: SOT-23-4 (Type A)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
56+0.32 EUR
65+0.27 EUR
70+0.25 EUR
76+0.23 EUR
80+0.22 EUR
100+0.21 EUR
500+0.19 EUR
1000+0.18 EUR
Mindestbestellmenge: 56
Im Einkaufswagen  Stück im Wert von  UAH
AHE101D-W4A-7 AHE101D-W4A-7 Diodes Incorporated AHE101.pdf Description: HALL ELEMENT SOT23-4A T&R 3K
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Axis: Single
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V
Technology: Hall Effect
Current - Supply (Max): 20mA
Supplier Device Package: SOT-23-4 (Type A)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.17 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
AHE101D-W4A-7 AHE101D-W4A-7 Diodes Incorporated AHE101.pdf Description: HALL ELEMENT SOT23-4A T&R 3K
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Axis: Single
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V
Technology: Hall Effect
Current - Supply (Max): 20mA
Supplier Device Package: SOT-23-4 (Type A)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
56+0.32 EUR
65+0.27 EUR
70+0.25 EUR
76+0.23 EUR
80+0.22 EUR
100+0.21 EUR
500+0.19 EUR
1000+0.18 EUR
Mindestbestellmenge: 56
Im Einkaufswagen  Stück im Wert von  UAH
AHE101G-W4A-7 AHE101G-W4A-7 Diodes Incorporated AHE101.pdf Description: HALL ELEMENT SOT23-4A T&R 3K
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Axis: Single
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V
Technology: Hall Effect
Current - Supply (Max): 20mA
Supplier Device Package: SOT-23-4 (Type A)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.17 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
AHE101G-W4A-7 AHE101G-W4A-7 Diodes Incorporated AHE101.pdf Description: HALL ELEMENT SOT23-4A T&R 3K
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Axis: Single
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V
Technology: Hall Effect
Current - Supply (Max): 20mA
Supplier Device Package: SOT-23-4 (Type A)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
56+0.32 EUR
65+0.27 EUR
70+0.25 EUR
76+0.23 EUR
80+0.22 EUR
100+0.21 EUR
500+0.19 EUR
1000+0.18 EUR
Mindestbestellmenge: 56
Im Einkaufswagen  Stück im Wert von  UAH
AHE101E-W4A-7 AHE101E-W4A-7 Diodes Incorporated AHE101.pdf Description: HALL ELEMENT SOT23-4A T&R 3K
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Axis: Single
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V
Technology: Hall Effect
Current - Supply (Max): 20mA
Supplier Device Package: SOT-23-4 (Type A)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.17 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
AHE101E-W4A-7 AHE101E-W4A-7 Diodes Incorporated AHE101.pdf Description: HALL ELEMENT SOT23-4A T&R 3K
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Axis: Single
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V
Technology: Hall Effect
Current - Supply (Max): 20mA
Supplier Device Package: SOT-23-4 (Type A)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
56+0.32 EUR
65+0.27 EUR
70+0.25 EUR
76+0.23 EUR
80+0.22 EUR
100+0.21 EUR
500+0.19 EUR
1000+0.18 EUR
Mindestbestellmenge: 56
Im Einkaufswagen  Stück im Wert von  UAH
AHE101F-W4A-7 AHE101F-W4A-7 Diodes Incorporated AHE101.pdf Description: HALL ELEMENT SOT23-4A T&R 3K
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Axis: Single
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V
Technology: Hall Effect
Current - Supply (Max): 20mA
Supplier Device Package: SOT-23-4 (Type A)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AHE101F-W4A-7 AHE101F-W4A-7 Diodes Incorporated AHE101.pdf Description: HALL ELEMENT SOT23-4A T&R 3K
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Axis: Single
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V
Technology: Hall Effect
Current - Supply (Max): 20mA
Supplier Device Package: SOT-23-4 (Type A)
auf Bestellung 2950 Stücke:
Lieferzeit 10-14 Tag (e)
56+0.32 EUR
65+0.27 EUR
70+0.25 EUR
76+0.23 EUR
80+0.22 EUR
100+0.21 EUR
500+0.19 EUR
1000+0.18 EUR
Mindestbestellmenge: 56
Im Einkaufswagen  Stück im Wert von  UAH
LXS0108ZHEX LXS0108ZHEX Diodes Incorporated LXS0108.pdf Description: IC XLTR VL BIDIR 20-TQFN
Packaging: Tape & Reel (TR)
Package / Case: 20-WFQFN Exposed Pad
Output Type: Open Drain, Push-Pull, Tri-State
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Data Rate: 110Mbps
Supplier Device Package: 20-TQFN (4.5x3.5)
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 8
Voltage - VCCA: 1.2 V ~ 3.6 V
Voltage - VCCB: 1.65 V ~ 5.5 V
Number of Circuits: 1
auf Bestellung 10500 Stücke:
Lieferzeit 10-14 Tag (e)
3500+0.59 EUR
7000+0.58 EUR
10500+0.57 EUR
Mindestbestellmenge: 3500
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LXS0108ZHEX LXS0108ZHEX Diodes Incorporated LXS0108.pdf Description: IC XLTR VL BIDIR 20-TQFN
Packaging: Cut Tape (CT)
Package / Case: 20-WFQFN Exposed Pad
Output Type: Open Drain, Push-Pull, Tri-State
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Data Rate: 110Mbps
Supplier Device Package: 20-TQFN (4.5x3.5)
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 8
Voltage - VCCA: 1.2 V ~ 3.6 V
Voltage - VCCB: 1.65 V ~ 5.5 V
Number of Circuits: 1
auf Bestellung 10500 Stücke:
Lieferzeit 10-14 Tag (e)
14+1.28 EUR
20+0.92 EUR
25+0.83 EUR
100+0.73 EUR
250+0.68 EUR
500+0.65 EUR
Mindestbestellmenge: 14
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LXS0108LEX LXS0108LEX Diodes Incorporated LXS0108.pdf Description: IC XLTR VL BIDIR 20-TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: Open Drain, Push-Pull, Tri-State
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Data Rate: 110Mbps
Supplier Device Package: 20-TSSOP
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 8
Voltage - VCCA: 1.2 V ~ 3.6 V
Voltage - VCCB: 1.65 V ~ 5.5 V
Number of Circuits: 1
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.63 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
LXS0108LEX LXS0108LEX Diodes Incorporated LXS0108.pdf Description: IC XLTR VL BIDIR 20-TSSOP
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: Open Drain, Push-Pull, Tri-State
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Data Rate: 110Mbps
Supplier Device Package: 20-TSSOP
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 8
Voltage - VCCA: 1.2 V ~ 3.6 V
Voltage - VCCB: 1.65 V ~ 5.5 V
Number of Circuits: 1
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
LXS0108LEX LXS0108LEX Diodes Incorporated LXS0108.pdf Description: IC XLTR VL BIDIR 20-TSSOP
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: Open Drain, Push-Pull, Tri-State
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Data Rate: 110Mbps
Supplier Device Package: 20-TSSOP
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 8
Voltage - VCCA: 1.2 V ~ 3.6 V
Voltage - VCCB: 1.65 V ~ 5.5 V
Number of Circuits: 1
Produkt ist nicht verfügbar
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LXS0108QLEX LXS0108QLEX Diodes Incorporated LXS0108Q.pdf Description: IC XLTR VL BIDIR 20-TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: Open Drain, Push-Pull, Tri-State
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Data Rate: 110Mbps
Supplier Device Package: 20-TSSOP
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 8
Voltage - VCCA: 1.2 V ~ 3.6 V
Voltage - VCCB: 1.65 V ~ 5.5 V
Grade: Automotive
Number of Circuits: 1
Qualification: AEC-Q100
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.82 EUR
6000+0.8 EUR
Mindestbestellmenge: 3000
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SMCJ54CAQ-13-F SMCJ54CAQ-13-F Diodes Incorporated SMCJ5.0CAQ-SMCJ200CAQ.pdf Description: TVS DIODE 54VWM 87.1VC SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 17.2A
Voltage - Reverse Standoff (Typ): 54V
Supplier Device Package: SMC
Bidirectional Channels: 1
Voltage - Breakdown (Min): 60V
Voltage - Clamping (Max) @ Ipp: 87.1V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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3.0SMCJ54CAQ-13 3.0SMCJ54CAQ-13 Diodes Incorporated ds40742.pdf Description: TVS DIODE 54VWM 87.1VC SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 34.4A
Voltage - Reverse Standoff (Typ): 54V
Supplier Device Package: SMC
Bidirectional Channels: 1
Voltage - Breakdown (Min): 60V
Voltage - Clamping (Max) @ Ipp: 87.1V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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DMTH8004LPSW-13 DMTH8004LPSW-13 Diodes Incorporated DMTH8004LPSW.pdf Description: IC
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 20A, 10V
Power Dissipation (Max): 1.5W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type UX)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4979 pF @ 40 V
Produkt ist nicht verfügbar
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DMTH8004LPSWQ-13 DMTH8004LPSWQ-13 Diodes Incorporated DMTH8004LPSWQ.pdf Description: IC
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 20A, 10V
Power Dissipation (Max): 1.5W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type UX)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4979 pF @ 40 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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DMTH8004LPS-13 DMTH8004LPS-13 Diodes Incorporated DMTH8004LPS.pdf Description: MOSFET BVDSS: 61V~100V POWERDI50
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 20A, 10V
Power Dissipation (Max): 1.5W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Supplier Device Package: PowerDI5060-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4979 pF @ 40 V
Produkt ist nicht verfügbar
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DMTH8003SPSWQ-13 DMTH8003SPSWQ-13 Diodes Incorporated DMTH8003SPSWQ.pdf Description: MOSFET BVDSS: 61V~100V POWERDI50
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 105A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 30A, 10V
Power Dissipation (Max): 3.75W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type UX)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 136 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9081 pF @ 40 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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DMTH8003SPSW-13 DMTH8003SPSW-13 Diodes Incorporated DMTH8003SPSW.pdf Description: MOSFET BVDSS: 61V~100V POWERDI50
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 105A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 30A, 10V
Power Dissipation (Max): 3.75W (Ta), 99W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type UX)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 136 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9081 pF @ 40 V
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DMTH8003STLW-13 DMTH8003STLW-13 Diodes Incorporated DMTH8003STLW.pdf Description: MOSFET BVDSS: 61V~100V POWERDI10
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 173A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 30A, 10V
Power Dissipation (Max): 5.6W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: POWERDI1012-8
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8191 pF @ 40 V
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DMTH8003STLWQ-13 DMTH8003STLWQ-13 Diodes Incorporated DMTH8003STLWQ.pdf Description: MOSFET BVDSS: 61V~100V POWERDI10
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 173A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 30A, 10V
Power Dissipation (Max): 5.6W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: POWERDI1012-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8191 pF @ 40 V
Qualification: AEC-Q101
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DMTH8001STLW-13 DMTH8001STLW-13 Diodes Incorporated DMTH8001STLW.pdf Description: MOSFET BVDSS: 61V~100V POWERDI10
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 270A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 30A, 10V
Power Dissipation (Max): 6W (Ta), 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: POWERDI1012-8
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 138 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8894 pF @ 50 V
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DF08M DF08M Diodes Incorporated ds21201.pdf Description: BRIDGE RECT 1PHASE 800V 1A DFM
Packaging: Tube
Package / Case: 4-EDIP (0.300", 7.62mm)
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DFM
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
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MMSZ5241BS-7 MMSZ5241BS-7 Diodes Incorporated ds31038.pdf Description: DIODE ZENER 11V 200MW SOD323
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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DMP68D1LQ-7 DMP68D1LQ-7 Diodes Incorporated DMP68D1LQ.pdf Description: 2N7002 FAMILY SOT23 T&R 3K
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 206mA (Ta)
Rds On (Max) @ Id, Vgs: 7.5Ohm @ 100mA, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: SOT-23-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 42 pF @ 30 V
Qualification: AEC-Q101
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2N7002EQ-7-F 2N7002EQ-7-F Diodes Incorporated 2N7002EQ.pdf Description: 2N7002 FAMILY SOT23 T&R 3K
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 292mA (Ta)
Rds On (Max) @ Id, Vgs: 3Ohm @ 250mA, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 35 pF @ 30 V
Qualification: AEC-Q101
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DMN62D2UQ-7 DMN62D2UQ-7 Diodes Incorporated DMN62D2UQ.pdf Description: 2N7002 FAMILY SOT23 T&R 3K
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 390mA (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 41 pF @ 30 V
Qualification: AEC-Q101
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DMN62D2UQ-7 DMN62D2UQ-7 Diodes Incorporated DMN62D2UQ.pdf Description: 2N7002 FAMILY SOT23 T&R 3K
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 390mA (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 41 pF @ 30 V
Qualification: AEC-Q101
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DMN62D1SFBW-7B Diodes Incorporated DMN62D1SFBW.pdf Description: 2N7002 FAMILY X2-DFN1006-3 T&R
Packaging: Tape & Reel (TR)
Package / Case: 3-UFDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 528mA (Ta)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 40mA, 10V
Power Dissipation (Max): 500µW (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: U-DFN1006-3/SWP (Type UX)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 43 pF @ 40 V
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DMN62D1SFBWQ-7B Diodes Incorporated DMN62D1SFBWQ.pdf Description: 2N7002 FAMILY X2-DFN1006-3 T&R
Packaging: Tape & Reel (TR)
Package / Case: 3-UFDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 538mA (Ta)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 40mA, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: U-DFN1006-3/SWP (Type UX)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 43 pF @ 40 V
Qualification: AEC-Q101
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70000+0.056 EUR
100000+0.053 EUR
250000+0.051 EUR
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DMTH6016LSD-13 DMTH6016LSD-13 Diodes Incorporated DMTH6016LSD.pdf Description: MOSFET 2N-CH 7.6A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C: 7.6A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 864pF @ 30V
Rds On (Max) @ Id, Vgs: 19.5mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Grade: Automotive
Qualification: AEC-Q101
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DMTH6016LSD-13 DMTH6016LSD-13 Diodes Incorporated DMTH6016LSD.pdf Description: MOSFET 2N-CH 7.6A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C: 7.6A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 864pF @ 30V
Rds On (Max) @ Id, Vgs: 19.5mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Grade: Automotive
Qualification: AEC-Q101
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MBR745 MBR745 Diodes Incorporated ds23007.pdf Description: DIODE SCHOTTKY 45V 7.5A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 400pF @ 4V, 1MHz
Current - Average Rectified (Io): 7.5A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 15 A
Current - Reverse Leakage @ Vr: 100 µA @ 45 V
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BZX84C7V5Q-7-F BZX84C7V5Q-7-F Diodes Incorporated ds18001.pdf Description: DIODE ZENER 7.5V 300MW SOT23
Tolerance: ±6%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 7.5 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOT-23-3
Grade: Automotive
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 1 µA @ 5 V
Qualification: AEC-Q101
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BZX84C7V5Q-7-F BZX84C7V5Q-7-F Diodes Incorporated ds18001.pdf Description: DIODE ZENER 7.5V 300MW SOT23
Tolerance: ±6%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 7.5 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOT-23-3
Grade: Automotive
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 1 µA @ 5 V
Qualification: AEC-Q101
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ZXTD718MCTA ZXTD718MCTA Diodes Incorporated ZXTD718MC.pdf Description: TRANS 2PNP 20V 3.5A W-DFN3020-8
Packaging: Tape & Reel (TR)
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.7W
Current - Collector (Ic) (Max): 3.5A
Voltage - Collector Emitter Breakdown (Max): 20V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 350mA, 3.5A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 2V
Frequency - Transition: 150MHz
Supplier Device Package: W-DFN3020-8
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ZXTD718MCTA ZXTD718MCTA Diodes Incorporated ZXTD718MC.pdf Description: TRANS 2PNP 20V 3.5A W-DFN3020-8
Packaging: Cut Tape (CT)
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.7W
Current - Collector (Ic) (Max): 3.5A
Voltage - Collector Emitter Breakdown (Max): 20V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 350mA, 3.5A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 2V
Frequency - Transition: 150MHz
Supplier Device Package: W-DFN3020-8
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DFLS240LX-7 DFLS240LX-7 Diodes Incorporated Description: DIODE SCHOTTK 40V 2A POWERDI 123
Packaging: Cut Tape (CT)
Package / Case: POWERDI®123
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 250pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: PowerDI™ 123
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
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DFLZ11Q-7 DFLZ11Q-7 Diodes Incorporated DFLZxxQ.pdf Description: DIODE ZENER 11V 1W POWERDI 123
Tolerance: ±5.45%
Packaging: Cut Tape (CT)
Package / Case: POWERDI®123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 11 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: PowerDI™ 123
Grade: Automotive
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 4 µA @ 8.2 V
Qualification: AEC-Q101
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DFLZ27Q-7 DFLZ27Q-7 Diodes Incorporated DFLZxxQ.pdf Description: DIODE ZENER 27V 1W POWERDI 123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: POWERDI®123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 3 Ohms
Supplier Device Package: PowerDI™ 123
Grade: Automotive
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 20 V
Qualification: AEC-Q101
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DFLZ27Q-7 DFLZ27Q-7 Diodes Incorporated DFLZxxQ.pdf Description: DIODE ZENER 27V 1W POWERDI 123
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: POWERDI®123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 3 Ohms
Supplier Device Package: PowerDI™ 123
Grade: Automotive
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 20 V
Qualification: AEC-Q101
auf Bestellung 14597 Stücke:
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DFLT36AQ-7 DFLT36AQ-7 Diodes Incorporated DFLT5V0AQ-DFLT40AQ.pdf Description: TVS DIODE 36VWM 58.1VC PWRDI 123
Packaging: Cut Tape (CT)
Package / Case: POWERDI®123
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 3.87A
Voltage - Reverse Standoff (Typ): 36V
Supplier Device Package: PowerDI™ 123
Unidirectional Channels: 1
Voltage - Breakdown (Min): 40V
Voltage - Clamping (Max) @ Ipp: 58.1V
Power - Peak Pulse: 225W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2883 Stücke:
Lieferzeit 10-14 Tag (e)
15+1.2 EUR
24+0.74 EUR
100+0.48 EUR
500+0.37 EUR
1000+0.33 EUR
Mindestbestellmenge: 15
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ES2DA_HF ES2DA_HF Diodes Incorporated ES2DA-ES2JA_LS.pdf Description: DIODE STANDARD 200V 2A SMA
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
auf Bestellung 169985 Stücke:
Lieferzeit 10-14 Tag (e)
63+0.28 EUR
98+0.18 EUR
111+0.16 EUR
130+0.14 EUR
250+0.12 EUR
1000+0.11 EUR
Mindestbestellmenge: 63
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ES2D_HF ES2D_HF Diodes Incorporated ds14002.pdf Description: DIODE STANDARD 200V 2A SMB
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SMB
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
auf Bestellung 3947750 Stücke:
Lieferzeit 10-14 Tag (e)
63+0.28 EUR
88+0.2 EUR
100+0.18 EUR
117+0.15 EUR
250+0.14 EUR
500+0.13 EUR
1000+0.12 EUR
Mindestbestellmenge: 63
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BFS17NQTA BFS17NQTA Diodes Incorporated ds32160.pdf Description: RF TRANS NPN 11V 3.2GHZ SOT-23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 310mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 11V
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 10V
Frequency - Transition: 3.2GHz
Supplier Device Package: SOT-23-3
Produkt ist nicht verfügbar
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BFS17NQTA BFS17NQTA Diodes Incorporated ds32160.pdf Description: RF TRANS NPN 11V 3.2GHZ SOT-23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 310mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 11V
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 10V
Frequency - Transition: 3.2GHz
Supplier Device Package: SOT-23-3
Produkt ist nicht verfügbar
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MBR10100CTP MBR10100CTP Diodes Incorporated MBR10100CTP.pdf Description: DIODE ARR SCHOTT 100V 5A ITO220S
Packaging: Tube
Package / Case: TO-220-3 Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: ITO-220S
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 5 A
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
Produkt ist nicht verfügbar
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AHE108F-W4C-7 AHE108.pdf
AHE108F-W4C-7
Hersteller: Diodes Incorporated
Description: HALL ELEMENT SOT23-4C T&R 4K
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Axis: Single
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V
Technology: Hall Effect
Current - Supply (Max): 20mA
Supplier Device Package: SOT-23-4 (Type C)
auf Bestellung 3940 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
56+0.32 EUR
65+0.27 EUR
70+0.25 EUR
76+0.23 EUR
80+0.22 EUR
100+0.21 EUR
500+0.19 EUR
1000+0.18 EUR
Mindestbestellmenge: 56
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AHE108G-W4C-7 AHE108.pdf
AHE108G-W4C-7
Hersteller: Diodes Incorporated
Description: HALL ELEMENT SOT23-4C T&R 4K
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Axis: Single
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V
Technology: Hall Effect
Current - Supply (Max): 20mA
Supplier Device Package: SOT-23-4 (Type C)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AHE108G-W4C-7 AHE108.pdf
AHE108G-W4C-7
Hersteller: Diodes Incorporated
Description: HALL ELEMENT SOT23-4C T&R 4K
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Axis: Single
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V
Technology: Hall Effect
Current - Supply (Max): 20mA
Supplier Device Package: SOT-23-4 (Type C)
auf Bestellung 3940 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
56+0.32 EUR
65+0.27 EUR
70+0.25 EUR
76+0.23 EUR
80+0.22 EUR
100+0.21 EUR
500+0.19 EUR
1000+0.18 EUR
Mindestbestellmenge: 56
Im Einkaufswagen  Stück im Wert von  UAH
AHE108E-W4C-7 AHE108.pdf
AHE108E-W4C-7
Hersteller: Diodes Incorporated
Description: HALL ELEMENT SOT23-4C T&R 4K
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Axis: Single
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V
Technology: Hall Effect
Current - Supply (Max): 20mA
Supplier Device Package: SOT-23-4 (Type C)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AHE108E-W4C-7 AHE108.pdf
AHE108E-W4C-7
Hersteller: Diodes Incorporated
Description: HALL ELEMENT SOT23-4C T&R 4K
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Axis: Single
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V
Technology: Hall Effect
Current - Supply (Max): 20mA
Supplier Device Package: SOT-23-4 (Type C)
auf Bestellung 3940 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
56+0.32 EUR
65+0.27 EUR
70+0.25 EUR
76+0.23 EUR
80+0.22 EUR
100+0.21 EUR
500+0.19 EUR
1000+0.18 EUR
Mindestbestellmenge: 56
Im Einkaufswagen  Stück im Wert von  UAH
AHE108D-W4C-7 AHE108.pdf
AHE108D-W4C-7
Hersteller: Diodes Incorporated
Description: HALL ELEMENT SOT23-4C T&R 4K
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Axis: Single
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V
Technology: Hall Effect
Current - Supply (Max): 20mA
Supplier Device Package: SOT-23-4 (Type C)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AHE108D-W4C-7 AHE108.pdf
AHE108D-W4C-7
Hersteller: Diodes Incorporated
Description: HALL ELEMENT SOT23-4C T&R 4K
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Axis: Single
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V
Technology: Hall Effect
Current - Supply (Max): 20mA
Supplier Device Package: SOT-23-4 (Type C)
auf Bestellung 3940 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
56+0.32 EUR
65+0.27 EUR
70+0.25 EUR
76+0.23 EUR
80+0.22 EUR
100+0.21 EUR
500+0.19 EUR
1000+0.18 EUR
Mindestbestellmenge: 56
Im Einkaufswagen  Stück im Wert von  UAH
AHE101C-W4A-7 AHE101.pdf
AHE101C-W4A-7
Hersteller: Diodes Incorporated
Description: HALL ELEMENT SOT23-4A T&R 3K
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Axis: Single
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V
Technology: Hall Effect
Current - Supply (Max): 20mA
Supplier Device Package: SOT-23-4 (Type A)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.17 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
AHE101C-W4A-7 AHE101.pdf
AHE101C-W4A-7
Hersteller: Diodes Incorporated
Description: HALL ELEMENT SOT23-4A T&R 3K
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Axis: Single
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V
Technology: Hall Effect
Current - Supply (Max): 20mA
Supplier Device Package: SOT-23-4 (Type A)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
56+0.32 EUR
65+0.27 EUR
70+0.25 EUR
76+0.23 EUR
80+0.22 EUR
100+0.21 EUR
500+0.19 EUR
1000+0.18 EUR
Mindestbestellmenge: 56
Im Einkaufswagen  Stück im Wert von  UAH
AHE101H-W4A-7 AHE101.pdf
AHE101H-W4A-7
Hersteller: Diodes Incorporated
Description: HALL ELEMENT SOT23-4A T&R 3K
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Axis: Single
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V
Technology: Hall Effect
Current - Supply (Max): 20mA
Supplier Device Package: SOT-23-4 (Type A)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.17 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
AHE101H-W4A-7 AHE101.pdf
AHE101H-W4A-7
Hersteller: Diodes Incorporated
Description: HALL ELEMENT SOT23-4A T&R 3K
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Axis: Single
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V
Technology: Hall Effect
Current - Supply (Max): 20mA
Supplier Device Package: SOT-23-4 (Type A)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
56+0.32 EUR
65+0.27 EUR
70+0.25 EUR
76+0.23 EUR
80+0.22 EUR
100+0.21 EUR
500+0.19 EUR
1000+0.18 EUR
Mindestbestellmenge: 56
Im Einkaufswagen  Stück im Wert von  UAH
AHE101D-W4A-7 AHE101.pdf
AHE101D-W4A-7
Hersteller: Diodes Incorporated
Description: HALL ELEMENT SOT23-4A T&R 3K
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Axis: Single
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V
Technology: Hall Effect
Current - Supply (Max): 20mA
Supplier Device Package: SOT-23-4 (Type A)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.17 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
AHE101D-W4A-7 AHE101.pdf
AHE101D-W4A-7
Hersteller: Diodes Incorporated
Description: HALL ELEMENT SOT23-4A T&R 3K
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Axis: Single
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V
Technology: Hall Effect
Current - Supply (Max): 20mA
Supplier Device Package: SOT-23-4 (Type A)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
56+0.32 EUR
65+0.27 EUR
70+0.25 EUR
76+0.23 EUR
80+0.22 EUR
100+0.21 EUR
500+0.19 EUR
1000+0.18 EUR
Mindestbestellmenge: 56
Im Einkaufswagen  Stück im Wert von  UAH
AHE101G-W4A-7 AHE101.pdf
AHE101G-W4A-7
Hersteller: Diodes Incorporated
Description: HALL ELEMENT SOT23-4A T&R 3K
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Axis: Single
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V
Technology: Hall Effect
Current - Supply (Max): 20mA
Supplier Device Package: SOT-23-4 (Type A)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.17 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
AHE101G-W4A-7 AHE101.pdf
AHE101G-W4A-7
Hersteller: Diodes Incorporated
Description: HALL ELEMENT SOT23-4A T&R 3K
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Axis: Single
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V
Technology: Hall Effect
Current - Supply (Max): 20mA
Supplier Device Package: SOT-23-4 (Type A)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
56+0.32 EUR
65+0.27 EUR
70+0.25 EUR
76+0.23 EUR
80+0.22 EUR
100+0.21 EUR
500+0.19 EUR
1000+0.18 EUR
Mindestbestellmenge: 56
Im Einkaufswagen  Stück im Wert von  UAH
AHE101E-W4A-7 AHE101.pdf
AHE101E-W4A-7
Hersteller: Diodes Incorporated
Description: HALL ELEMENT SOT23-4A T&R 3K
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Axis: Single
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V
Technology: Hall Effect
Current - Supply (Max): 20mA
Supplier Device Package: SOT-23-4 (Type A)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.17 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
AHE101E-W4A-7 AHE101.pdf
AHE101E-W4A-7
Hersteller: Diodes Incorporated
Description: HALL ELEMENT SOT23-4A T&R 3K
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Axis: Single
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V
Technology: Hall Effect
Current - Supply (Max): 20mA
Supplier Device Package: SOT-23-4 (Type A)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
56+0.32 EUR
65+0.27 EUR
70+0.25 EUR
76+0.23 EUR
80+0.22 EUR
100+0.21 EUR
500+0.19 EUR
1000+0.18 EUR
Mindestbestellmenge: 56
Im Einkaufswagen  Stück im Wert von  UAH
AHE101F-W4A-7 AHE101.pdf
AHE101F-W4A-7
Hersteller: Diodes Incorporated
Description: HALL ELEMENT SOT23-4A T&R 3K
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Axis: Single
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V
Technology: Hall Effect
Current - Supply (Max): 20mA
Supplier Device Package: SOT-23-4 (Type A)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AHE101F-W4A-7 AHE101.pdf
AHE101F-W4A-7
Hersteller: Diodes Incorporated
Description: HALL ELEMENT SOT23-4A T&R 3K
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Axis: Single
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V
Technology: Hall Effect
Current - Supply (Max): 20mA
Supplier Device Package: SOT-23-4 (Type A)
auf Bestellung 2950 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
56+0.32 EUR
65+0.27 EUR
70+0.25 EUR
76+0.23 EUR
80+0.22 EUR
100+0.21 EUR
500+0.19 EUR
1000+0.18 EUR
Mindestbestellmenge: 56
Im Einkaufswagen  Stück im Wert von  UAH
LXS0108ZHEX LXS0108.pdf
LXS0108ZHEX
Hersteller: Diodes Incorporated
Description: IC XLTR VL BIDIR 20-TQFN
Packaging: Tape & Reel (TR)
Package / Case: 20-WFQFN Exposed Pad
Output Type: Open Drain, Push-Pull, Tri-State
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Data Rate: 110Mbps
Supplier Device Package: 20-TQFN (4.5x3.5)
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 8
Voltage - VCCA: 1.2 V ~ 3.6 V
Voltage - VCCB: 1.65 V ~ 5.5 V
Number of Circuits: 1
auf Bestellung 10500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3500+0.59 EUR
7000+0.58 EUR
10500+0.57 EUR
Mindestbestellmenge: 3500
Im Einkaufswagen  Stück im Wert von  UAH
LXS0108ZHEX LXS0108.pdf
LXS0108ZHEX
Hersteller: Diodes Incorporated
Description: IC XLTR VL BIDIR 20-TQFN
Packaging: Cut Tape (CT)
Package / Case: 20-WFQFN Exposed Pad
Output Type: Open Drain, Push-Pull, Tri-State
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Data Rate: 110Mbps
Supplier Device Package: 20-TQFN (4.5x3.5)
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 8
Voltage - VCCA: 1.2 V ~ 3.6 V
Voltage - VCCB: 1.65 V ~ 5.5 V
Number of Circuits: 1
auf Bestellung 10500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
14+1.28 EUR
20+0.92 EUR
25+0.83 EUR
100+0.73 EUR
250+0.68 EUR
500+0.65 EUR
Mindestbestellmenge: 14
Im Einkaufswagen  Stück im Wert von  UAH
LXS0108LEX LXS0108.pdf
LXS0108LEX
Hersteller: Diodes Incorporated
Description: IC XLTR VL BIDIR 20-TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: Open Drain, Push-Pull, Tri-State
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Data Rate: 110Mbps
Supplier Device Package: 20-TSSOP
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 8
Voltage - VCCA: 1.2 V ~ 3.6 V
Voltage - VCCB: 1.65 V ~ 5.5 V
Number of Circuits: 1
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.63 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
LXS0108LEX LXS0108.pdf
LXS0108LEX
Hersteller: Diodes Incorporated
Description: IC XLTR VL BIDIR 20-TSSOP
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: Open Drain, Push-Pull, Tri-State
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Data Rate: 110Mbps
Supplier Device Package: 20-TSSOP
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 8
Voltage - VCCA: 1.2 V ~ 3.6 V
Voltage - VCCB: 1.65 V ~ 5.5 V
Number of Circuits: 1
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
LXS0108LEX LXS0108.pdf
LXS0108LEX
Hersteller: Diodes Incorporated
Description: IC XLTR VL BIDIR 20-TSSOP
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: Open Drain, Push-Pull, Tri-State
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Data Rate: 110Mbps
Supplier Device Package: 20-TSSOP
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 8
Voltage - VCCA: 1.2 V ~ 3.6 V
Voltage - VCCB: 1.65 V ~ 5.5 V
Number of Circuits: 1
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
LXS0108QLEX LXS0108Q.pdf
LXS0108QLEX
Hersteller: Diodes Incorporated
Description: IC XLTR VL BIDIR 20-TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: Open Drain, Push-Pull, Tri-State
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Data Rate: 110Mbps
Supplier Device Package: 20-TSSOP
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 8
Voltage - VCCA: 1.2 V ~ 3.6 V
Voltage - VCCB: 1.65 V ~ 5.5 V
Grade: Automotive
Number of Circuits: 1
Qualification: AEC-Q100
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.82 EUR
6000+0.8 EUR
Mindestbestellmenge: 3000
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SMCJ54CAQ-13-F SMCJ5.0CAQ-SMCJ200CAQ.pdf
SMCJ54CAQ-13-F
Hersteller: Diodes Incorporated
Description: TVS DIODE 54VWM 87.1VC SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 17.2A
Voltage - Reverse Standoff (Typ): 54V
Supplier Device Package: SMC
Bidirectional Channels: 1
Voltage - Breakdown (Min): 60V
Voltage - Clamping (Max) @ Ipp: 87.1V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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3.0SMCJ54CAQ-13 ds40742.pdf
3.0SMCJ54CAQ-13
Hersteller: Diodes Incorporated
Description: TVS DIODE 54VWM 87.1VC SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 34.4A
Voltage - Reverse Standoff (Typ): 54V
Supplier Device Package: SMC
Bidirectional Channels: 1
Voltage - Breakdown (Min): 60V
Voltage - Clamping (Max) @ Ipp: 87.1V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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DMTH8004LPSW-13 DMTH8004LPSW.pdf
DMTH8004LPSW-13
Hersteller: Diodes Incorporated
Description: IC
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 20A, 10V
Power Dissipation (Max): 1.5W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type UX)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4979 pF @ 40 V
Produkt ist nicht verfügbar
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DMTH8004LPSWQ-13 DMTH8004LPSWQ.pdf
DMTH8004LPSWQ-13
Hersteller: Diodes Incorporated
Description: IC
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 20A, 10V
Power Dissipation (Max): 1.5W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type UX)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4979 pF @ 40 V
Qualification: AEC-Q101
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DMTH8004LPS-13 DMTH8004LPS.pdf
DMTH8004LPS-13
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 61V~100V POWERDI50
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 20A, 10V
Power Dissipation (Max): 1.5W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Supplier Device Package: PowerDI5060-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4979 pF @ 40 V
Produkt ist nicht verfügbar
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DMTH8003SPSWQ-13 DMTH8003SPSWQ.pdf
DMTH8003SPSWQ-13
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 61V~100V POWERDI50
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 105A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 30A, 10V
Power Dissipation (Max): 3.75W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type UX)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 136 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9081 pF @ 40 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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DMTH8003SPSW-13 DMTH8003SPSW.pdf
DMTH8003SPSW-13
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 61V~100V POWERDI50
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 105A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 30A, 10V
Power Dissipation (Max): 3.75W (Ta), 99W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type UX)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 136 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9081 pF @ 40 V
Produkt ist nicht verfügbar
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DMTH8003STLW-13 DMTH8003STLW.pdf
DMTH8003STLW-13
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 61V~100V POWERDI10
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 173A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 30A, 10V
Power Dissipation (Max): 5.6W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: POWERDI1012-8
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8191 pF @ 40 V
Produkt ist nicht verfügbar
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DMTH8003STLWQ-13 DMTH8003STLWQ.pdf
DMTH8003STLWQ-13
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 61V~100V POWERDI10
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 173A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 30A, 10V
Power Dissipation (Max): 5.6W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: POWERDI1012-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8191 pF @ 40 V
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1500+1.8 EUR
Mindestbestellmenge: 1500
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DMTH8001STLW-13 DMTH8001STLW.pdf
DMTH8001STLW-13
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 61V~100V POWERDI10
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 270A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 30A, 10V
Power Dissipation (Max): 6W (Ta), 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: POWERDI1012-8
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 138 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8894 pF @ 50 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1500+4.1 EUR
Mindestbestellmenge: 1500
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DF08M ds21201.pdf
DF08M
Hersteller: Diodes Incorporated
Description: BRIDGE RECT 1PHASE 800V 1A DFM
Packaging: Tube
Package / Case: 4-EDIP (0.300", 7.62mm)
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DFM
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
auf Bestellung 53488 Stücke:
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Anzahl Preis
17+1.09 EUR
50+0.45 EUR
100+0.4 EUR
500+0.33 EUR
1000+0.29 EUR
2000+0.27 EUR
5000+0.24 EUR
10000+0.22 EUR
50000+0.2 EUR
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MMSZ5241BS-7 ds31038.pdf
MMSZ5241BS-7
Hersteller: Diodes Incorporated
Description: DIODE ZENER 11V 200MW SOD323
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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DMP68D1LQ-7 DMP68D1LQ.pdf
DMP68D1LQ-7
Hersteller: Diodes Incorporated
Description: 2N7002 FAMILY SOT23 T&R 3K
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 206mA (Ta)
Rds On (Max) @ Id, Vgs: 7.5Ohm @ 100mA, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: SOT-23-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 42 pF @ 30 V
Qualification: AEC-Q101
auf Bestellung 146900 Stücke:
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Anzahl Preis
77+0.23 EUR
112+0.16 EUR
128+0.14 EUR
151+0.12 EUR
250+0.11 EUR
500+0.1 EUR
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2N7002EQ-7-F 2N7002EQ.pdf
2N7002EQ-7-F
Hersteller: Diodes Incorporated
Description: 2N7002 FAMILY SOT23 T&R 3K
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 292mA (Ta)
Rds On (Max) @ Id, Vgs: 3Ohm @ 250mA, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 35 pF @ 30 V
Qualification: AEC-Q101
auf Bestellung 47620 Stücke:
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Anzahl Preis
35+0.51 EUR
61+0.29 EUR
108+0.16 EUR
500+0.13 EUR
1000+0.1 EUR
Mindestbestellmenge: 35
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DMN62D2UQ-7 DMN62D2UQ.pdf
DMN62D2UQ-7
Hersteller: Diodes Incorporated
Description: 2N7002 FAMILY SOT23 T&R 3K
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 390mA (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 41 pF @ 30 V
Qualification: AEC-Q101
auf Bestellung 1445 Stücke:
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Anzahl Preis
30+0.6 EUR
49+0.36 EUR
100+0.19 EUR
500+0.13 EUR
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DMN62D2UQ-7 DMN62D2UQ.pdf
DMN62D2UQ-7
Hersteller: Diodes Incorporated
Description: 2N7002 FAMILY SOT23 T&R 3K
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 390mA (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 41 pF @ 30 V
Qualification: AEC-Q101
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DMN62D1SFBW-7B DMN62D1SFBW.pdf
Hersteller: Diodes Incorporated
Description: 2N7002 FAMILY X2-DFN1006-3 T&R
Packaging: Tape & Reel (TR)
Package / Case: 3-UFDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 528mA (Ta)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 40mA, 10V
Power Dissipation (Max): 500µW (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: U-DFN1006-3/SWP (Type UX)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 43 pF @ 40 V
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DMN62D1SFBWQ-7B DMN62D1SFBWQ.pdf
Hersteller: Diodes Incorporated
Description: 2N7002 FAMILY X2-DFN1006-3 T&R
Packaging: Tape & Reel (TR)
Package / Case: 3-UFDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 538mA (Ta)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 40mA, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: U-DFN1006-3/SWP (Type UX)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 43 pF @ 40 V
Qualification: AEC-Q101
auf Bestellung 980000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10000+0.071 EUR
20000+0.065 EUR
30000+0.061 EUR
50000+0.058 EUR
70000+0.056 EUR
100000+0.053 EUR
250000+0.051 EUR
Mindestbestellmenge: 10000
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DMTH6016LSD-13 DMTH6016LSD.pdf
DMTH6016LSD-13
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 7.6A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C: 7.6A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 864pF @ 30V
Rds On (Max) @ Id, Vgs: 19.5mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Grade: Automotive
Qualification: AEC-Q101
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DMTH6016LSD-13 DMTH6016LSD.pdf
DMTH6016LSD-13
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 7.6A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C: 7.6A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 864pF @ 30V
Rds On (Max) @ Id, Vgs: 19.5mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1097 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+2.13 EUR
14+1.35 EUR
100+0.89 EUR
500+0.7 EUR
1000+0.64 EUR
Mindestbestellmenge: 9
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MBR745 ds23007.pdf
MBR745
Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 45V 7.5A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 400pF @ 4V, 1MHz
Current - Average Rectified (Io): 7.5A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 15 A
Current - Reverse Leakage @ Vr: 100 µA @ 45 V
Produkt ist nicht verfügbar
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BZX84C7V5Q-7-F ds18001.pdf
BZX84C7V5Q-7-F
Hersteller: Diodes Incorporated
Description: DIODE ZENER 7.5V 300MW SOT23
Tolerance: ±6%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 7.5 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOT-23-3
Grade: Automotive
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 1 µA @ 5 V
Qualification: AEC-Q101
auf Bestellung 51000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
63+0.28 EUR
95+0.19 EUR
150+0.12 EUR
500+0.075 EUR
1000+0.065 EUR
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BZX84C7V5Q-7-F ds18001.pdf
BZX84C7V5Q-7-F
Hersteller: Diodes Incorporated
Description: DIODE ZENER 7.5V 300MW SOT23
Tolerance: ±6%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 7.5 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOT-23-3
Grade: Automotive
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 1 µA @ 5 V
Qualification: AEC-Q101
auf Bestellung 51000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
63+0.28 EUR
95+0.19 EUR
150+0.12 EUR
500+0.075 EUR
1000+0.065 EUR
Mindestbestellmenge: 63
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ZXTD718MCTA ZXTD718MC.pdf
ZXTD718MCTA
Hersteller: Diodes Incorporated
Description: TRANS 2PNP 20V 3.5A W-DFN3020-8
Packaging: Tape & Reel (TR)
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.7W
Current - Collector (Ic) (Max): 3.5A
Voltage - Collector Emitter Breakdown (Max): 20V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 350mA, 3.5A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 2V
Frequency - Transition: 150MHz
Supplier Device Package: W-DFN3020-8
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.48 EUR
Mindestbestellmenge: 3000
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ZXTD718MCTA ZXTD718MC.pdf
ZXTD718MCTA
Hersteller: Diodes Incorporated
Description: TRANS 2PNP 20V 3.5A W-DFN3020-8
Packaging: Cut Tape (CT)
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.7W
Current - Collector (Ic) (Max): 3.5A
Voltage - Collector Emitter Breakdown (Max): 20V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 350mA, 3.5A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 2V
Frequency - Transition: 150MHz
Supplier Device Package: W-DFN3020-8
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+1.88 EUR
15+1.18 EUR
100+0.78 EUR
500+0.61 EUR
1000+0.55 EUR
Mindestbestellmenge: 10
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DFLS240LX-7
DFLS240LX-7
Hersteller: Diodes Incorporated
Description: DIODE SCHOTTK 40V 2A POWERDI 123
Packaging: Cut Tape (CT)
Package / Case: POWERDI®123
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 250pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: PowerDI™ 123
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
auf Bestellung 11773 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
100+0.18 EUR
162+0.11 EUR
186+0.095 EUR
221+0.08 EUR
250+0.073 EUR
500+0.068 EUR
1000+0.065 EUR
Mindestbestellmenge: 100
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DFLZ11Q-7 DFLZxxQ.pdf
DFLZ11Q-7
Hersteller: Diodes Incorporated
Description: DIODE ZENER 11V 1W POWERDI 123
Tolerance: ±5.45%
Packaging: Cut Tape (CT)
Package / Case: POWERDI®123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 11 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: PowerDI™ 123
Grade: Automotive
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 4 µA @ 8.2 V
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
19+0.95 EUR
31+0.58 EUR
100+0.37 EUR
500+0.28 EUR
1000+0.25 EUR
Mindestbestellmenge: 19
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DFLZ27Q-7 DFLZxxQ.pdf
DFLZ27Q-7
Hersteller: Diodes Incorporated
Description: DIODE ZENER 27V 1W POWERDI 123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: POWERDI®123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 3 Ohms
Supplier Device Package: PowerDI™ 123
Grade: Automotive
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 20 V
Qualification: AEC-Q101
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.2 EUR
Mindestbestellmenge: 3000
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DFLZ27Q-7 DFLZxxQ.pdf
DFLZ27Q-7
Hersteller: Diodes Incorporated
Description: DIODE ZENER 27V 1W POWERDI 123
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: POWERDI®123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 3 Ohms
Supplier Device Package: PowerDI™ 123
Grade: Automotive
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 20 V
Qualification: AEC-Q101
auf Bestellung 14597 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
17+1.04 EUR
28+0.63 EUR
100+0.4 EUR
500+0.31 EUR
1000+0.28 EUR
Mindestbestellmenge: 17
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DFLT36AQ-7 DFLT5V0AQ-DFLT40AQ.pdf
DFLT36AQ-7
Hersteller: Diodes Incorporated
Description: TVS DIODE 36VWM 58.1VC PWRDI 123
Packaging: Cut Tape (CT)
Package / Case: POWERDI®123
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 3.87A
Voltage - Reverse Standoff (Typ): 36V
Supplier Device Package: PowerDI™ 123
Unidirectional Channels: 1
Voltage - Breakdown (Min): 40V
Voltage - Clamping (Max) @ Ipp: 58.1V
Power - Peak Pulse: 225W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2883 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
15+1.2 EUR
24+0.74 EUR
100+0.48 EUR
500+0.37 EUR
1000+0.33 EUR
Mindestbestellmenge: 15
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ES2DA_HF ES2DA-ES2JA_LS.pdf
ES2DA_HF
Hersteller: Diodes Incorporated
Description: DIODE STANDARD 200V 2A SMA
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
auf Bestellung 169985 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
63+0.28 EUR
98+0.18 EUR
111+0.16 EUR
130+0.14 EUR
250+0.12 EUR
1000+0.11 EUR
Mindestbestellmenge: 63
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ES2D_HF ds14002.pdf
ES2D_HF
Hersteller: Diodes Incorporated
Description: DIODE STANDARD 200V 2A SMB
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SMB
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
auf Bestellung 3947750 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
63+0.28 EUR
88+0.2 EUR
100+0.18 EUR
117+0.15 EUR
250+0.14 EUR
500+0.13 EUR
1000+0.12 EUR
Mindestbestellmenge: 63
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BFS17NQTA ds32160.pdf
BFS17NQTA
Hersteller: Diodes Incorporated
Description: RF TRANS NPN 11V 3.2GHZ SOT-23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 310mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 11V
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 10V
Frequency - Transition: 3.2GHz
Supplier Device Package: SOT-23-3
Produkt ist nicht verfügbar
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BFS17NQTA ds32160.pdf
BFS17NQTA
Hersteller: Diodes Incorporated
Description: RF TRANS NPN 11V 3.2GHZ SOT-23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 310mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 11V
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 10V
Frequency - Transition: 3.2GHz
Supplier Device Package: SOT-23-3
Produkt ist nicht verfügbar
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MBR10100CTP MBR10100CTP.pdf
MBR10100CTP
Hersteller: Diodes Incorporated
Description: DIODE ARR SCHOTT 100V 5A ITO220S
Packaging: Tube
Package / Case: TO-220-3 Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: ITO-220S
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 5 A
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
Produkt ist nicht verfügbar
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