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UX7BF62012 Diodes Incorporated Description: XTAL OSC XO 156.26171MHZ PECL
Packaging: Tape & Reel (TR)
Output: LVPECL
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -20°C ~ 70°C
Frequency Stability: ±20ppm
Voltage - Supply: 3.3V
Current - Supply (Max): 60mA
Frequency: 156.26171 MHz
Base Resonator: Crystal
Produkt ist nicht verfügbar
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AP7347DQ-22FDZW-7B AP7347DQ-22FDZW-7B Diodes Incorporated AP7347DQ.pdf Description: IC REG LINEAR 2.2V W-DFN2020-6
Packaging: Bulk
Package / Case: 6-WDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount, Wettable Flank
Current - Output: 500mA
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 125 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: W-DFN2020-6 (SWP) (Type A1)
Voltage - Output (Min/Fixed): 2.2V
Control Features: Current Limit, Enable
Grade: Automotive
PSRR: 75dB (1kHz)
Voltage Dropout (Max): 0.42V @ 500mA
Protection Features: Over Current, Over Temperature, Short Circuit
Qualification: AEC-Q100
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1000+0.41 EUR
3000+0.39 EUR
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AP7347DQ-22FDZW-7 AP7347DQ-22FDZW-7 Diodes Incorporated AP7347DQ.pdf Description: IC REG LINEAR 2.2V W-DFN2020-6
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount, Wettable Flank
Current - Output: 500mA
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 125 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: W-DFN2020-6 (SWP) (Type A1)
Voltage - Output (Min/Fixed): 2.2V
Control Features: Current Limit, Enable
PSRR: 75dB (1kHz)
Voltage Dropout (Max): 0.42V @ 500mA
Protection Features: Over Current, Over Temperature, Short Circuit
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AP7347DQ-22FDZW-7 AP7347DQ-22FDZW-7 Diodes Incorporated AP7347DQ.pdf Description: IC REG LINEAR 2.2V W-DFN2020-6
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount, Wettable Flank
Current - Output: 500mA
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 125 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: W-DFN2020-6 (SWP) (Type A1)
Voltage - Output (Min/Fixed): 2.2V
Control Features: Current Limit, Enable
PSRR: 75dB (1kHz)
Voltage Dropout (Max): 0.42V @ 500mA
Protection Features: Over Current, Over Temperature, Short Circuit
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ADTA114YUAQ-13 ADTA114YUAQ-13 Diodes Incorporated ADTA114YUAQ.pdf Description: TRANS PREBIAS PNP 50V SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 10mA, 5V
Supplier Device Package: SOT-323
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 330 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
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ADTA114YUAQ-7 ADTA114YUAQ-7 Diodes Incorporated ADTA114YUAQ.pdf Description: TRANS PREBIAS PNP 50V SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 10mA, 5V
Supplier Device Package: SOT-323
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 330 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
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G83270040 G83270040 Diodes Incorporated Description: XTAL PLASTIC SMD3215 SMD
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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G83270031 G83270031 Diodes Incorporated Description: XTAL PLASTIC SMD3215 SMD
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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G83270042 G83270042 Diodes Incorporated Description: XTAL PLASTIC SMD3215 SMD
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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G83270033 G83270033 Diodes Incorporated Description: XTAL PLASTIC SMD3215 SMD
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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GBJ1506 GBJ1506 Diodes Incorporated ds21219.pdf Description: BRIDGE RECT 1PHASE 600V 15A GBJ
Packaging: Tube
Package / Case: 4-SIP, GBJ
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBJ
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 7.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Produkt ist nicht verfügbar
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BC857CFSWQ-7 Diodes Incorporated Description: TRANS PNP 45V 0.1A UDFN14123/SWP
Packaging: Tape & Reel (TR)
Package / Case: 3-UDFN
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: U-DFN1412-3/SWP (Type A)
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 450 mW
Qualification: AEC-Q101
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SMBJ78AQ-13-F SMBJ78AQ-13-F Diodes Incorporated Description: TVS DIODE 78VWM 126VC SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 4.7A
Voltage - Reverse Standoff (Typ): 78V
Supplier Device Package: SMB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 86.7V
Voltage - Clamping (Max) @ Ipp: 126V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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FCX619-13R FCX619-13R Diodes Incorporated Description: TRANS NPN 50V 3A SOT-89-3
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 320mV @ 100mA, 2.75A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 200mA, 2V
Frequency - Transition: 165MHz
Supplier Device Package: SOT-89-3
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 700 mW
Produkt ist nicht verfügbar
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ZXMS6004SGQTA ZXMS6004SGQTA Diodes Incorporated ZXMS6004SGQ.pdf Description: LOW SIDE INTELLIFET SOT223 T&R 1
Features: Auto Restart
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Low Side
Rds On (Typ): 350mOhm
Input Type: Non-Inverting
Voltage - Load: 0V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.3A
Ratio - Input:Output: 1:1
Supplier Device Package: SOT-223
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Grade: Automotive
Qualification: AEC-Q101
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ZXMS6004SG-13 ZXMS6004SG-13 Diodes Incorporated Description: LINEAR IC
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: High Side
Rds On (Typ): 350mOhm
Input Type: Non-Inverting
Voltage - Load: 60V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.3A
Ratio - Input:Output: 1:1
Supplier Device Package: SOT-223
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage, Short Circuit
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ZXMS6004SGQ-13 ZXMS6004SGQ-13 Diodes Incorporated Description: LOW SIDE INTELLIFET SOT223 T&R 2
Features: Auto Restart
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 350mOhm
Input Type: Non-Inverting
Voltage - Load: 60V
Current - Output (Max): 1.3A
Ratio - Input:Output: 1:1
Supplier Device Package: SOT-223
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage, Short Circuit
Grade: Automotive
Qualification: AEC-Q101
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SDM40E20LA-7 SDM40E20LA-7 Diodes Incorporated SDM40E20L_S_C_A.pdf Description: DIODE ARR SCHOTT 20V 400MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 400mA (DC)
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -65°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 310 mV @ 100 mA
Current - Reverse Leakage @ Vr: 250 µA @ 20 V
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SDM40E20LAQ-7 SDM40E20LAQ-7 Diodes Incorporated SDM40E20LSQ-AQ.pdf Description: DIODE ARR SCHOTT 20V 400MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 400mA (DC)
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -65°C ~ 125°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 310 mV @ 100 mA
Current - Reverse Leakage @ Vr: 250 µA @ 20 V
Qualification: AEC-Q101
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SDM40E20LAQ-7 SDM40E20LAQ-7 Diodes Incorporated SDM40E20LSQ-AQ.pdf Description: DIODE ARR SCHOTT 20V 400MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 400mA (DC)
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -65°C ~ 125°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 310 mV @ 100 mA
Current - Reverse Leakage @ Vr: 250 µA @ 20 V
Qualification: AEC-Q101
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SDM40E20LA-7-2477 SDM40E20LA-7-2477 Diodes Incorporated Description: DIODE ARR SCHOTT 20V 400MA SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 400mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -65°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 310 mV @ 100 mA
Current - Reverse Leakage @ Vr: 250 µA @ 20 V
Produkt ist nicht verfügbar
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PI3A3899ZTAEX PI3A3899ZTAEX Diodes Incorporated PI3A3899.pdf Description: IC SWITCH DPDT X 2 2.4OHM 16UQFN
Packaging: Tape & Reel (TR)
Package / Case: 16-UFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 2.4Ohm
-3db Bandwidth: 330MHz
Supplier Device Package: 16-UQFN (1.8x2.6)
Voltage - Supply, Single (V+): 1.65V ~ 4.3V
Charge Injection: 13pC
Crosstalk: -100dB @ 1MHz
Switch Circuit: DPDT
Multiplexer/Demultiplexer Circuit: 2:2
Channel-to-Channel Matching (ΔRon): 200mOhm
Switch Time (Ton, Toff) (Max): 8ns, 12ns
Channel Capacitance (CS(off), CD(off)): 7pF
Current - Leakage (IS(off)) (Max): 1µA
Number of Circuits: 2
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PI3A3899ZTAEX PI3A3899ZTAEX Diodes Incorporated PI3A3899.pdf Description: IC SWITCH DPDT X 2 2.4OHM 16UQFN
Packaging: Cut Tape (CT)
Package / Case: 16-UFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 2.4Ohm
-3db Bandwidth: 330MHz
Supplier Device Package: 16-UQFN (1.8x2.6)
Voltage - Supply, Single (V+): 1.65V ~ 4.3V
Charge Injection: 13pC
Crosstalk: -100dB @ 1MHz
Switch Circuit: DPDT
Multiplexer/Demultiplexer Circuit: 2:2
Channel-to-Channel Matching (ΔRon): 200mOhm
Switch Time (Ton, Toff) (Max): 8ns, 12ns
Channel Capacitance (CS(off), CD(off)): 7pF
Current - Leakage (IS(off)) (Max): 1µA
Number of Circuits: 2
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250+0.63 EUR
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1000+0.59 EUR
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BC817-25FSW-7 Diodes Incorporated BC817-16FSW-BC817-40FSW.pdf Description: IC
Packaging: Tape & Reel (TR)
Package / Case: 3-UDFN
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: U-DFN1412-3/SWP (Type A)
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 500 mW
Produkt ist nicht verfügbar
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MBR2045CTP MBR2045CTP Diodes Incorporated ds31799.pdf Description: DIODE ARR SCHOTT 45V 10A ITO220S
Packaging: Tube
Package / Case: TO-220-3 Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: ITO-220S
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 45 V
Produkt ist nicht verfügbar
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DF02S DF02S Diodes Incorporated ds17001.pdf Description: BRIDGE RECT 1PHASE 200V 1A DF-S
Packaging: Tube
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DF-S
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
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5000+0.47 EUR
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DF02S-T DF02S-T Diodes Incorporated ds17001.pdf Description: BRIDGE RECT 1PHASE 200V 1A DF-S
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DF-S
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
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DF02S-T DF02S-T Diodes Incorporated ds17001.pdf Description: BRIDGE RECT 1PHASE 200V 1A DF-S
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DF-S
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
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DF01S DF01S Diodes Incorporated ds17001.pdf Description: BRIDGE RECT 1PHASE 100V 1A DF-S
Packaging: Tube
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DF-S
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
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ABS10_HF ABS10_HF Diodes Incorporated PdfFile_217570.pdf Description: BRIDGE RECT 1PHASE 1KV 1A ABS
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: ABS
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
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UF1003-T UF1003-T Diodes Incorporated UF1001-UF1007.pdf Description: DIODE STANDARD 200V 1A DO41
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
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BSS138-13-F BSS138-13-F Diodes Incorporated Description: MOSFET N-CH 50V 200MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 220mA, 10V
Power Dissipation (Max): 300mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 10 V
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BSS138-13-F BSS138-13-F Diodes Incorporated Description: MOSFET N-CH 50V 200MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 220mA, 10V
Power Dissipation (Max): 300mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 10 V
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AP7353D-25FS4-7 AP7353D-25FS4-7 Diodes Incorporated AP7353.pdf Description: IC REG LINEAR 2.5V X2-DFN10104
Packaging: Cut Tape (CT)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 250mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 27 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: X2-DFN1010-4 (Type B)
Voltage - Output (Min/Fixed): 2.5V
Control Features: Current Limit, Enable
PSRR: 90dB ~ 70dB (100Hz ~ 10kHz)
Voltage Dropout (Max): 0.168V @ 250mA
Protection Features: Over Current, Over Temperature, Short Circuit
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MBRF20200CT MBRF20200CT Diodes Incorporated MBR%28F%2920200CT.pdf Description: DIODE ARR SCHOTTKY 200V ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 890 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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DMT3006LFDFQ-13 DMT3006LFDFQ-13 Diodes Incorporated Description: LINEAR IC
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.1A (Ta)
Rds On (Max) @ Id, Vgs: 7mOhm @ 9A, 10V
Power Dissipation (Max): 800mW
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 3.7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1155 pF @ 15 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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DMT3006LDV-13 DMT3006LDV-13 Diodes Incorporated DMT3006LDV.pdf Description: MOSFET 2N-CH 30V 25A PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 900mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1155pF @ 15V
Rds On (Max) @ Id, Vgs: 10mOhm @ 9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 16.7nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8 (Type UXC)
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DMT3006LDV-7 DMT3006LDV-7 Diodes Incorporated DMT3006LDV.pdf Description: MOSFET 2N-CH 30V 25A PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 900mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1155pF @ 15V
Rds On (Max) @ Id, Vgs: 10mOhm @ 9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 16.7nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8 (Type UXC)
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DMTH8028LFVWQ-7 DMTH8028LFVWQ-7 Diodes Incorporated DMTH8028LFVWQ.pdf Description: MOSFET BVDSS: 61V~100V POWERDI33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 5A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 10.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 631 pF @ 40 V
Qualification: AEC-Q101
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DMTH8028LFVWQ-7 DMTH8028LFVWQ-7 Diodes Incorporated DMTH8028LFVWQ.pdf Description: MOSFET BVDSS: 61V~100V POWERDI33
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 5A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 10.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 631 pF @ 40 V
Qualification: AEC-Q101
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1.5KE350A-B 1.5KE350A-B Diodes Incorporated ds21503.pdf Description: TVS DIODE 300VWM 482VC DO201
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 4A
Voltage - Reverse Standoff (Typ): 300V
Supplier Device Package: DO-201
Unidirectional Channels: 1
Voltage - Breakdown (Min): 332V
Voltage - Clamping (Max) @ Ipp: 482V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Produkt ist nicht verfügbar
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DMTH8012LPSW-13 DMTH8012LPSW-13 Diodes Incorporated DMTH8012LPSW.pdf Description: MOSFET N-CH 80V 53.7A PWRDI5060
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 53.7A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 12A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type Q)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1949 pF @ 40 V
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DMTH8012LPSW-13 DMTH8012LPSW-13 Diodes Incorporated DMTH8012LPSW.pdf Description: MOSFET N-CH 80V 53.7A PWRDI5060
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 53.7A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 12A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type Q)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1949 pF @ 40 V
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DMT61M5SPSW-13 DMT61M5SPSW-13 Diodes Incorporated DMT61M5SPSW.pdf Description: MOSFET BVDSS: 41V~60V POWERDI506
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 215A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 30A, 10V
Power Dissipation (Max): 2.7W (Ta), 139W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI5060-8 (SWP)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 130.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8306 pF @ 30 V
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DMT61M5SPSW-13 DMT61M5SPSW-13 Diodes Incorporated DMT61M5SPSW.pdf Description: MOSFET BVDSS: 41V~60V POWERDI506
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 215A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 30A, 10V
Power Dissipation (Max): 2.7W (Ta), 139W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI5060-8 (SWP)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 130.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8306 pF @ 30 V
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DMP3028LPSW-13 DMP3028LPSW-13 Diodes Incorporated DMP3028LPSW.pdf Description: MOSFET BVDSS: 25V~30V POWERDI506
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 7A, 10V
Power Dissipation (Max): 1.28W (Ta), 2.1W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type UX)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1421 pF @ 15 V
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DMT35M4LPSW-13 DMT35M4LPSW-13 Diodes Incorporated DMT35M4LPSW.pdf Description: MOSFET BVDSS: 25V~30V POWERDI506
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18.9A (Ta), 71.1A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type UX)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1029 pF @ 15 V
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DMTH47M2LPSW-13 DMTH47M2LPSW-13 Diodes Incorporated DMTH47M2LPSW.pdf Description: MOSFET BVDSS: 31V~40V POWERDI506
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 73A (Tc)
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 20A, 10V
Power Dissipation (Max): 3.8W (Ta), 68W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type UX)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 891 pF @ 20 V
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DMTH4008LPSW-13 DMTH4008LPSW-13 Diodes Incorporated DMTH4008LPSW.pdf Description: IC
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.4A (Ta), 64.8A (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 10A, 10V
Power Dissipation (Max): 2.99W (Ta), 55.5W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type UX)
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 15.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1088 pF @ 20 V
Produkt ist nicht verfügbar
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DMP3021SPSW-13 DMP3021SPSW-13 Diodes Incorporated DMP3021SPSW.pdf Description: MOSFET BVDSS: 25V~30V PowerDI506
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10.6A (Ta), 52.7A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 8A, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type UX)
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1799 pF @ 15 V
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DMP6050SPSW-13 DMP6050SPSW-13 Diodes Incorporated DMP6050SPSW.pdf Description: IC
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 5A, 10V
Power Dissipation (Max): 1.3W
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type UX)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2163 pF @ 30 V
Produkt ist nicht verfügbar
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DMP3011SPSW-13 DMP3011SPSW-13 Diodes Incorporated DMP3011SPSW.pdf Description: MOSFET BVDSS: 25V~30V PowerDI506
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 65A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 11.5A, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type UX)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2380 pF @ 15 V
Produkt ist nicht verfügbar
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DMTH47M2SPSW-13 DMTH47M2SPSW-13 Diodes Incorporated DMTH47M2SPSW.pdf Description: MOSFET BVDSS: 31V~40V POWERDI506
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 73A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 20A, 10V
Power Dissipation (Max): 3.3W (Ta), 68W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type UX)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 12.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 897 pF @ 20 V
Produkt ist nicht verfügbar
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DMP10H088SPSW-13 DMP10H088SPSW-13 Diodes Incorporated DMP10H088SPSW.pdf Description: IC
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 83mOhm @ 4.4A, 10V
Power Dissipation (Max): 2.2W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type UX)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 27.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1808 pF @ 50 V
Produkt ist nicht verfügbar
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DMWSH120H90SM4 DMWSH120H90SM4 Diodes Incorporated DMWSH120H90SM4.pdf Description: SICFET N-CH 1200V TO-247
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 97.5mOhm @ 20A, 15V
Power Dissipation (Max): 235W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 5mA
Supplier Device Package: TO-247-4
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 51.1 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1112 pF @ 1000 V
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DMWSH120H90SM3Q DMWSH120H90SM3Q Diodes Incorporated DMWSH120H90SM3Q.pdf Description: SICFET N-CH 1200V TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Tc)
Rds On (Max) @ Id, Vgs: 97.5mOhm @ 20A, 15V
Power Dissipation (Max): 246W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 5mA
Supplier Device Package: TO-247
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 50.9 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1090 pF @ 1000 V
Qualification: AEC-Q101
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DMWSH120H90SCT7-13 Diodes Incorporated DMWSH120H90SCT7.pdf Description: SICFET N-CH 1200V TO-247
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38.2A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 20A, 15V
Power Dissipation (Max): 197W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 5mA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 54.6 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1078 pF @ 1000 V
Produkt ist nicht verfügbar
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DMWSH120H90SCT7Q-13 Diodes Incorporated DMWSH120H90SCT7Q.pdf Description: SICFET N-CH 1200V TO-247
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38.2A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 20A, 15V
Power Dissipation (Max): 197W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 5mA
Supplier Device Package: TO-263-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 54.6 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1078 pF @ 1000 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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DMWSH120H90SCT7 Diodes Incorporated DMWSH120H90SCT7.pdf Description: SICFET N-CH 1200V TO-247
Packaging: Tube
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38.2A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 20A, 15V
Power Dissipation (Max): 197W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 5mA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 54.6 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1078 pF @ 1000 V
auf Bestellung 100 Stücke:
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50+9.63 EUR
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DMWSH120H90SCT7Q Diodes Incorporated DMWSH120H90SCT7Q.pdf Description: SICFET N-CH 1200V TO-247
Packaging: Tube
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38.2A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 20A, 15V
Power Dissipation (Max): 197W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 5mA
Supplier Device Package: TO-263-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 54.6 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1078 pF @ 1000 V
Qualification: AEC-Q101
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50+12.58 EUR
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UX7BF62012
Hersteller: Diodes Incorporated
Description: XTAL OSC XO 156.26171MHZ PECL
Packaging: Tape & Reel (TR)
Output: LVPECL
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -20°C ~ 70°C
Frequency Stability: ±20ppm
Voltage - Supply: 3.3V
Current - Supply (Max): 60mA
Frequency: 156.26171 MHz
Base Resonator: Crystal
Produkt ist nicht verfügbar
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AP7347DQ-22FDZW-7B AP7347DQ.pdf
AP7347DQ-22FDZW-7B
Hersteller: Diodes Incorporated
Description: IC REG LINEAR 2.2V W-DFN2020-6
Packaging: Bulk
Package / Case: 6-WDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount, Wettable Flank
Current - Output: 500mA
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 125 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: W-DFN2020-6 (SWP) (Type A1)
Voltage - Output (Min/Fixed): 2.2V
Control Features: Current Limit, Enable
Grade: Automotive
PSRR: 75dB (1kHz)
Voltage Dropout (Max): 0.42V @ 500mA
Protection Features: Over Current, Over Temperature, Short Circuit
Qualification: AEC-Q100
auf Bestellung 81000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
21+0.86 EUR
29+0.61 EUR
33+0.55 EUR
100+0.48 EUR
250+0.44 EUR
500+0.42 EUR
1000+0.41 EUR
3000+0.39 EUR
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AP7347DQ-22FDZW-7 AP7347DQ.pdf
AP7347DQ-22FDZW-7
Hersteller: Diodes Incorporated
Description: IC REG LINEAR 2.2V W-DFN2020-6
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount, Wettable Flank
Current - Output: 500mA
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 125 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: W-DFN2020-6 (SWP) (Type A1)
Voltage - Output (Min/Fixed): 2.2V
Control Features: Current Limit, Enable
PSRR: 75dB (1kHz)
Voltage Dropout (Max): 0.42V @ 500mA
Protection Features: Over Current, Over Temperature, Short Circuit
Produkt ist nicht verfügbar
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AP7347DQ-22FDZW-7 AP7347DQ.pdf
AP7347DQ-22FDZW-7
Hersteller: Diodes Incorporated
Description: IC REG LINEAR 2.2V W-DFN2020-6
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount, Wettable Flank
Current - Output: 500mA
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 125 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: W-DFN2020-6 (SWP) (Type A1)
Voltage - Output (Min/Fixed): 2.2V
Control Features: Current Limit, Enable
PSRR: 75dB (1kHz)
Voltage Dropout (Max): 0.42V @ 500mA
Protection Features: Over Current, Over Temperature, Short Circuit
auf Bestellung 2989 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
21+0.86 EUR
29+0.61 EUR
33+0.55 EUR
100+0.48 EUR
250+0.44 EUR
500+0.42 EUR
1000+0.41 EUR
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ADTA114YUAQ-13 ADTA114YUAQ.pdf
ADTA114YUAQ-13
Hersteller: Diodes Incorporated
Description: TRANS PREBIAS PNP 50V SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 10mA, 5V
Supplier Device Package: SOT-323
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 330 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
auf Bestellung 150000 Stücke:
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Anzahl Preis
10000+0.064 EUR
20000+0.058 EUR
30000+0.055 EUR
50000+0.052 EUR
70000+0.05 EUR
100000+0.048 EUR
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ADTA114YUAQ-7 ADTA114YUAQ.pdf
ADTA114YUAQ-7
Hersteller: Diodes Incorporated
Description: TRANS PREBIAS PNP 50V SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 10mA, 5V
Supplier Device Package: SOT-323
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 330 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
Produkt ist nicht verfügbar
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G83270040
G83270040
Hersteller: Diodes Incorporated
Description: XTAL PLASTIC SMD3215 SMD
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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G83270031
G83270031
Hersteller: Diodes Incorporated
Description: XTAL PLASTIC SMD3215 SMD
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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G83270042
G83270042
Hersteller: Diodes Incorporated
Description: XTAL PLASTIC SMD3215 SMD
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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G83270033
G83270033
Hersteller: Diodes Incorporated
Description: XTAL PLASTIC SMD3215 SMD
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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GBJ1506 ds21219.pdf
GBJ1506
Hersteller: Diodes Incorporated
Description: BRIDGE RECT 1PHASE 600V 15A GBJ
Packaging: Tube
Package / Case: 4-SIP, GBJ
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBJ
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 7.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Produkt ist nicht verfügbar
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BC857CFSWQ-7
Hersteller: Diodes Incorporated
Description: TRANS PNP 45V 0.1A UDFN14123/SWP
Packaging: Tape & Reel (TR)
Package / Case: 3-UDFN
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: U-DFN1412-3/SWP (Type A)
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 450 mW
Qualification: AEC-Q101
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+0.052 EUR
10000+0.05 EUR
Mindestbestellmenge: 5000
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SMBJ78AQ-13-F
SMBJ78AQ-13-F
Hersteller: Diodes Incorporated
Description: TVS DIODE 78VWM 126VC SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 4.7A
Voltage - Reverse Standoff (Typ): 78V
Supplier Device Package: SMB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 86.7V
Voltage - Clamping (Max) @ Ipp: 126V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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FCX619-13R
FCX619-13R
Hersteller: Diodes Incorporated
Description: TRANS NPN 50V 3A SOT-89-3
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 320mV @ 100mA, 2.75A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 200mA, 2V
Frequency - Transition: 165MHz
Supplier Device Package: SOT-89-3
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 700 mW
Produkt ist nicht verfügbar
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ZXMS6004SGQTA ZXMS6004SGQ.pdf
ZXMS6004SGQTA
Hersteller: Diodes Incorporated
Description: LOW SIDE INTELLIFET SOT223 T&R 1
Features: Auto Restart
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Low Side
Rds On (Typ): 350mOhm
Input Type: Non-Inverting
Voltage - Load: 0V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.3A
Ratio - Input:Output: 1:1
Supplier Device Package: SOT-223
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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ZXMS6004SG-13
ZXMS6004SG-13
Hersteller: Diodes Incorporated
Description: LINEAR IC
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: High Side
Rds On (Typ): 350mOhm
Input Type: Non-Inverting
Voltage - Load: 60V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.3A
Ratio - Input:Output: 1:1
Supplier Device Package: SOT-223
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage, Short Circuit
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.22 EUR
Mindestbestellmenge: 2500
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ZXMS6004SGQ-13
ZXMS6004SGQ-13
Hersteller: Diodes Incorporated
Description: LOW SIDE INTELLIFET SOT223 T&R 2
Features: Auto Restart
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 350mOhm
Input Type: Non-Inverting
Voltage - Load: 60V
Current - Output (Max): 1.3A
Ratio - Input:Output: 1:1
Supplier Device Package: SOT-223
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage, Short Circuit
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.31 EUR
Mindestbestellmenge: 2500
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SDM40E20LA-7 SDM40E20L_S_C_A.pdf
SDM40E20LA-7
Hersteller: Diodes Incorporated
Description: DIODE ARR SCHOTT 20V 400MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 400mA (DC)
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -65°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 310 mV @ 100 mA
Current - Reverse Leakage @ Vr: 250 µA @ 20 V
auf Bestellung 45000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.33 EUR
6000+0.31 EUR
Mindestbestellmenge: 3000
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SDM40E20LAQ-7 SDM40E20LSQ-AQ.pdf
SDM40E20LAQ-7
Hersteller: Diodes Incorporated
Description: DIODE ARR SCHOTT 20V 400MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 400mA (DC)
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -65°C ~ 125°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 310 mV @ 100 mA
Current - Reverse Leakage @ Vr: 250 µA @ 20 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SDM40E20LAQ-7 SDM40E20LSQ-AQ.pdf
SDM40E20LAQ-7
Hersteller: Diodes Incorporated
Description: DIODE ARR SCHOTT 20V 400MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 400mA (DC)
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -65°C ~ 125°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 310 mV @ 100 mA
Current - Reverse Leakage @ Vr: 250 µA @ 20 V
Qualification: AEC-Q101
auf Bestellung 578 Stücke:
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20+0.88 EUR
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100+0.35 EUR
500+0.26 EUR
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SDM40E20LA-7-2477
SDM40E20LA-7-2477
Hersteller: Diodes Incorporated
Description: DIODE ARR SCHOTT 20V 400MA SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 400mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -65°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 310 mV @ 100 mA
Current - Reverse Leakage @ Vr: 250 µA @ 20 V
Produkt ist nicht verfügbar
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PI3A3899ZTAEX PI3A3899.pdf
PI3A3899ZTAEX
Hersteller: Diodes Incorporated
Description: IC SWITCH DPDT X 2 2.4OHM 16UQFN
Packaging: Tape & Reel (TR)
Package / Case: 16-UFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 2.4Ohm
-3db Bandwidth: 330MHz
Supplier Device Package: 16-UQFN (1.8x2.6)
Voltage - Supply, Single (V+): 1.65V ~ 4.3V
Charge Injection: 13pC
Crosstalk: -100dB @ 1MHz
Switch Circuit: DPDT
Multiplexer/Demultiplexer Circuit: 2:2
Channel-to-Channel Matching (ΔRon): 200mOhm
Switch Time (Ton, Toff) (Max): 8ns, 12ns
Channel Capacitance (CS(off), CD(off)): 7pF
Current - Leakage (IS(off)) (Max): 1µA
Number of Circuits: 2
Produkt ist nicht verfügbar
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PI3A3899ZTAEX PI3A3899.pdf
PI3A3899ZTAEX
Hersteller: Diodes Incorporated
Description: IC SWITCH DPDT X 2 2.4OHM 16UQFN
Packaging: Cut Tape (CT)
Package / Case: 16-UFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 2.4Ohm
-3db Bandwidth: 330MHz
Supplier Device Package: 16-UQFN (1.8x2.6)
Voltage - Supply, Single (V+): 1.65V ~ 4.3V
Charge Injection: 13pC
Crosstalk: -100dB @ 1MHz
Switch Circuit: DPDT
Multiplexer/Demultiplexer Circuit: 2:2
Channel-to-Channel Matching (ΔRon): 200mOhm
Switch Time (Ton, Toff) (Max): 8ns, 12ns
Channel Capacitance (CS(off), CD(off)): 7pF
Current - Leakage (IS(off)) (Max): 1µA
Number of Circuits: 2
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15+1.2 EUR
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100+0.67 EUR
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BC817-25FSW-7 BC817-16FSW-BC817-40FSW.pdf
Hersteller: Diodes Incorporated
Description: IC
Packaging: Tape & Reel (TR)
Package / Case: 3-UDFN
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: U-DFN1412-3/SWP (Type A)
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 500 mW
Produkt ist nicht verfügbar
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MBR2045CTP ds31799.pdf
MBR2045CTP
Hersteller: Diodes Incorporated
Description: DIODE ARR SCHOTT 45V 10A ITO220S
Packaging: Tube
Package / Case: TO-220-3 Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: ITO-220S
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 45 V
Produkt ist nicht verfügbar
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DF02S ds17001.pdf
DF02S
Hersteller: Diodes Incorporated
Description: BRIDGE RECT 1PHASE 200V 1A DF-S
Packaging: Tube
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DF-S
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
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DF02S-T ds17001.pdf
DF02S-T
Hersteller: Diodes Incorporated
Description: BRIDGE RECT 1PHASE 200V 1A DF-S
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DF-S
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
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DF02S-T ds17001.pdf
DF02S-T
Hersteller: Diodes Incorporated
Description: BRIDGE RECT 1PHASE 200V 1A DF-S
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DF-S
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
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DF01S ds17001.pdf
DF01S
Hersteller: Diodes Incorporated
Description: BRIDGE RECT 1PHASE 100V 1A DF-S
Packaging: Tube
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DF-S
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
auf Bestellung 2750 Stücke:
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10+1.85 EUR
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ABS10_HF PdfFile_217570.pdf
ABS10_HF
Hersteller: Diodes Incorporated
Description: BRIDGE RECT 1PHASE 1KV 1A ABS
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: ABS
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
auf Bestellung 1615000 Stücke:
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67+0.26 EUR
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UF1003-T UF1001-UF1007.pdf
UF1003-T
Hersteller: Diodes Incorporated
Description: DIODE STANDARD 200V 1A DO41
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
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BSS138-13-F
BSS138-13-F
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 50V 200MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 220mA, 10V
Power Dissipation (Max): 300mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 10 V
Produkt ist nicht verfügbar
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BSS138-13-F
BSS138-13-F
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 50V 200MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 220mA, 10V
Power Dissipation (Max): 300mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 10 V
auf Bestellung 6751 Stücke:
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59+0.3 EUR
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155+0.11 EUR
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AP7353D-25FS4-7 AP7353.pdf
AP7353D-25FS4-7
Hersteller: Diodes Incorporated
Description: IC REG LINEAR 2.5V X2-DFN10104
Packaging: Cut Tape (CT)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 250mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 27 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: X2-DFN1010-4 (Type B)
Voltage - Output (Min/Fixed): 2.5V
Control Features: Current Limit, Enable
PSRR: 90dB ~ 70dB (100Hz ~ 10kHz)
Voltage Dropout (Max): 0.168V @ 250mA
Protection Features: Over Current, Over Temperature, Short Circuit
auf Bestellung 5000 Stücke:
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40+0.44 EUR
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MBRF20200CT MBR%28F%2920200CT.pdf
MBRF20200CT
Hersteller: Diodes Incorporated
Description: DIODE ARR SCHOTTKY 200V ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 890 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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DMT3006LFDFQ-13
DMT3006LFDFQ-13
Hersteller: Diodes Incorporated
Description: LINEAR IC
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.1A (Ta)
Rds On (Max) @ Id, Vgs: 7mOhm @ 9A, 10V
Power Dissipation (Max): 800mW
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 3.7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1155 pF @ 15 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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DMT3006LDV-13 DMT3006LDV.pdf
DMT3006LDV-13
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 30V 25A PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 900mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1155pF @ 15V
Rds On (Max) @ Id, Vgs: 10mOhm @ 9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 16.7nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8 (Type UXC)
Produkt ist nicht verfügbar
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DMT3006LDV-7 DMT3006LDV.pdf
DMT3006LDV-7
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 30V 25A PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 900mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1155pF @ 15V
Rds On (Max) @ Id, Vgs: 10mOhm @ 9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 16.7nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8 (Type UXC)
auf Bestellung 20000 Stücke:
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2000+0.42 EUR
4000+0.38 EUR
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DMTH8028LFVWQ-7 DMTH8028LFVWQ.pdf
DMTH8028LFVWQ-7
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 61V~100V POWERDI33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 5A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 10.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 631 pF @ 40 V
Qualification: AEC-Q101
auf Bestellung 2000 Stücke:
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DMTH8028LFVWQ-7 DMTH8028LFVWQ.pdf
DMTH8028LFVWQ-7
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 61V~100V POWERDI33
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 5A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 10.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 631 pF @ 40 V
Qualification: AEC-Q101
auf Bestellung 2485 Stücke:
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Anzahl Preis
13+1.44 EUR
18+0.99 EUR
100+0.67 EUR
500+0.54 EUR
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1.5KE350A-B ds21503.pdf
1.5KE350A-B
Hersteller: Diodes Incorporated
Description: TVS DIODE 300VWM 482VC DO201
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 4A
Voltage - Reverse Standoff (Typ): 300V
Supplier Device Package: DO-201
Unidirectional Channels: 1
Voltage - Breakdown (Min): 332V
Voltage - Clamping (Max) @ Ipp: 482V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Produkt ist nicht verfügbar
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DMTH8012LPSW-13 DMTH8012LPSW.pdf
DMTH8012LPSW-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 80V 53.7A PWRDI5060
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 53.7A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 12A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type Q)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1949 pF @ 40 V
auf Bestellung 12500 Stücke:
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2500+0.52 EUR
7500+0.46 EUR
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DMTH8012LPSW-13 DMTH8012LPSW.pdf
DMTH8012LPSW-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 80V 53.7A PWRDI5060
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 53.7A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 12A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type Q)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1949 pF @ 40 V
auf Bestellung 12730 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+1.78 EUR
14+1.28 EUR
100+0.85 EUR
500+0.66 EUR
1000+0.6 EUR
Mindestbestellmenge: 10
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DMT61M5SPSW-13 DMT61M5SPSW.pdf
DMT61M5SPSW-13
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 41V~60V POWERDI506
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 215A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 30A, 10V
Power Dissipation (Max): 2.7W (Ta), 139W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI5060-8 (SWP)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 130.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8306 pF @ 30 V
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+1.32 EUR
Mindestbestellmenge: 2500
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DMT61M5SPSW-13 DMT61M5SPSW.pdf
DMT61M5SPSW-13
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 41V~60V POWERDI506
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 215A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 30A, 10V
Power Dissipation (Max): 2.7W (Ta), 139W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI5060-8 (SWP)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 130.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8306 pF @ 30 V
auf Bestellung 17071 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.63 EUR
10+2.6 EUR
100+1.78 EUR
500+1.44 EUR
Mindestbestellmenge: 5
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DMP3028LPSW-13 DMP3028LPSW.pdf
DMP3028LPSW-13
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 25V~30V POWERDI506
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 7A, 10V
Power Dissipation (Max): 1.28W (Ta), 2.1W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type UX)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1421 pF @ 15 V
auf Bestellung 12500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.31 EUR
5000+0.28 EUR
7500+0.27 EUR
12500+0.26 EUR
Mindestbestellmenge: 2500
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DMT35M4LPSW-13 DMT35M4LPSW.pdf
DMT35M4LPSW-13
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 25V~30V POWERDI506
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18.9A (Ta), 71.1A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type UX)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1029 pF @ 15 V
auf Bestellung 12500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.35 EUR
5000+0.32 EUR
7500+0.31 EUR
12500+0.29 EUR
Mindestbestellmenge: 2500
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DMTH47M2LPSW-13 DMTH47M2LPSW.pdf
DMTH47M2LPSW-13
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 31V~40V POWERDI506
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 73A (Tc)
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 20A, 10V
Power Dissipation (Max): 3.8W (Ta), 68W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type UX)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 891 pF @ 20 V
auf Bestellung 122500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.36 EUR
5000+0.33 EUR
7500+0.32 EUR
12500+0.3 EUR
Mindestbestellmenge: 2500
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DMTH4008LPSW-13 DMTH4008LPSW.pdf
DMTH4008LPSW-13
Hersteller: Diodes Incorporated
Description: IC
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.4A (Ta), 64.8A (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 10A, 10V
Power Dissipation (Max): 2.99W (Ta), 55.5W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type UX)
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 15.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1088 pF @ 20 V
Produkt ist nicht verfügbar
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DMP3021SPSW-13 DMP3021SPSW.pdf
DMP3021SPSW-13
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 25V~30V PowerDI506
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10.6A (Ta), 52.7A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 8A, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type UX)
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1799 pF @ 15 V
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.37 EUR
Mindestbestellmenge: 2500
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DMP6050SPSW-13 DMP6050SPSW.pdf
DMP6050SPSW-13
Hersteller: Diodes Incorporated
Description: IC
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 5A, 10V
Power Dissipation (Max): 1.3W
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type UX)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2163 pF @ 30 V
Produkt ist nicht verfügbar
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DMP3011SPSW-13 DMP3011SPSW.pdf
DMP3011SPSW-13
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 25V~30V PowerDI506
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 65A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 11.5A, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type UX)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2380 pF @ 15 V
Produkt ist nicht verfügbar
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DMTH47M2SPSW-13 DMTH47M2SPSW.pdf
DMTH47M2SPSW-13
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 31V~40V POWERDI506
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 73A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 20A, 10V
Power Dissipation (Max): 3.3W (Ta), 68W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type UX)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 12.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 897 pF @ 20 V
Produkt ist nicht verfügbar
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DMP10H088SPSW-13 DMP10H088SPSW.pdf
DMP10H088SPSW-13
Hersteller: Diodes Incorporated
Description: IC
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 83mOhm @ 4.4A, 10V
Power Dissipation (Max): 2.2W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type UX)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 27.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1808 pF @ 50 V
Produkt ist nicht verfügbar
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DMWSH120H90SM4 DMWSH120H90SM4.pdf
DMWSH120H90SM4
Hersteller: Diodes Incorporated
Description: SICFET N-CH 1200V TO-247
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 97.5mOhm @ 20A, 15V
Power Dissipation (Max): 235W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 5mA
Supplier Device Package: TO-247-4
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 51.1 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1112 pF @ 1000 V
auf Bestellung 120320 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+16.81 EUR
30+11.72 EUR
120+10.81 EUR
510+10.3 EUR
Mindestbestellmenge: 2
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DMWSH120H90SM3Q DMWSH120H90SM3Q.pdf
DMWSH120H90SM3Q
Hersteller: Diodes Incorporated
Description: SICFET N-CH 1200V TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Tc)
Rds On (Max) @ Id, Vgs: 97.5mOhm @ 20A, 15V
Power Dissipation (Max): 246W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 5mA
Supplier Device Package: TO-247
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 50.9 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1090 pF @ 1000 V
Qualification: AEC-Q101
auf Bestellung 1195 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+20.63 EUR
30+14.15 EUR
120+13.3 EUR
510+13.04 EUR
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DMWSH120H90SCT7-13 DMWSH120H90SCT7.pdf
Hersteller: Diodes Incorporated
Description: SICFET N-CH 1200V TO-247
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38.2A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 20A, 15V
Power Dissipation (Max): 197W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 5mA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 54.6 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1078 pF @ 1000 V
Produkt ist nicht verfügbar
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DMWSH120H90SCT7Q-13 DMWSH120H90SCT7Q.pdf
Hersteller: Diodes Incorporated
Description: SICFET N-CH 1200V TO-247
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38.2A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 20A, 15V
Power Dissipation (Max): 197W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 5mA
Supplier Device Package: TO-263-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 54.6 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1078 pF @ 1000 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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DMWSH120H90SCT7 DMWSH120H90SCT7.pdf
Hersteller: Diodes Incorporated
Description: SICFET N-CH 1200V TO-247
Packaging: Tube
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38.2A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 20A, 15V
Power Dissipation (Max): 197W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 5mA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 54.6 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1078 pF @ 1000 V
auf Bestellung 100 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
50+9.63 EUR
Mindestbestellmenge: 50
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DMWSH120H90SCT7Q DMWSH120H90SCT7Q.pdf
Hersteller: Diodes Incorporated
Description: SICFET N-CH 1200V TO-247
Packaging: Tube
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38.2A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 20A, 15V
Power Dissipation (Max): 197W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 5mA
Supplier Device Package: TO-263-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 54.6 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1078 pF @ 1000 V
Qualification: AEC-Q101
auf Bestellung 1450 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
50+12.58 EUR
Mindestbestellmenge: 50
Im Einkaufswagen  Stück im Wert von  UAH
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