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MMBZ5239BT-7-G Diodes Incorporated Description: DIODE ZENER SOT523
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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DPC357S-A-TR DPC357S-A-TR Diodes Incorporated DPC357+Series.pdf Description: OPTOISO 3.75KV 1CH TRANS 4-SOP
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 80% @ 5mA
Vce Saturation (Max): 200mV
Current Transfer Ratio (Max): 160% @ 5mA
Supplier Device Package: 4-SOP
Voltage - Output (Max): 80V
Rise / Fall Time (Typ): 18µs, 18µs (Max)
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
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100+0.18 EUR
250+0.17 EUR
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1000+0.15 EUR
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DPC357S-B-TR DPC357S-B-TR Diodes Incorporated DPC357+Series.pdf Description: OPTOISO 3.75KV 1CH TRANS 4-SOP
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 130% @ 5mA
Vce Saturation (Max): 200mV
Current Transfer Ratio (Max): 260% @ 5mA
Supplier Device Package: 4-SOP
Voltage - Output (Max): 80V
Rise / Fall Time (Typ): 18µs, 18µs (Max)
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
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73+0.24 EUR
83+0.21 EUR
100+0.18 EUR
250+0.17 EUR
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1000+0.15 EUR
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DMTH4M72SPGW-13 DMTH4M72SPGW-13 Diodes Incorporated DMTH4M72SPGW.pdf Description: MOSFET BVDSS: 31V~40V POWERDI808
Packaging: Cut Tape (CT)
Package / Case: SOT-1235
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 584A (Tc)
Rds On (Max) @ Id, Vgs: 0.7mOhm @ 25A, 10V
Power Dissipation (Max): 5.6W (Ta), 441W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI8080-5
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 118 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9522 pF @ 20 V
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DMTH4M72SPGWQ-13 DMTH4M72SPGWQ-13 Diodes Incorporated DMTH4M72SPGWQ.pdf Description: MOSFET BVDSS: 31V~40V POWERDI808
Packaging: Cut Tape (CT)
Package / Case: SOT-1235
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 584A (Tc)
Rds On (Max) @ Id, Vgs: 0.7mOhm @ 25A, 10V
Power Dissipation (Max): 5.6W (Ta), 441W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI8080-5
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 118 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9522 pF @ 20 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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MBR2045CT MBR2045CT Diodes Incorporated MBR%28F%292045CT-2060CT.pdf Description: DIODE ARR SCHOTT 45V 20A TO2203
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 45 V
Produkt ist nicht verfügbar
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MBR2045CTP MBR2045CTP Diodes Incorporated ds31799.pdf Description: DIODE ARR SCHOTT 45V 10A ITO220S
Packaging: Tube
Package / Case: TO-220-3 Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: ITO-220S
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 45 V
Produkt ist nicht verfügbar
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MBR2535CT MBR2535CT Diodes Incorporated MBR2545CT-2560CT.pdf Description: DIODE ARR SCHOTT 35V 30A TO2203
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 820 mV @ 30 A
Current - Reverse Leakage @ Vr: 200 µA @ 35 V
Produkt ist nicht verfügbar
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DMG1026UVQ-7 DMG1026UVQ-7 Diodes Incorporated DMG1026UVQ_NRND.pdf Description: MOSFET 2N-CH 60V 0.44A SOT563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 650mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 440mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 32pF @ 25V
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 500mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 0.45nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Supplier Device Package: SOT-563
Grade: Automotive
Qualification: AEC-Q101
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DMG1026UVQ-7 DMG1026UVQ-7 Diodes Incorporated DMG1026UVQ_NRND.pdf Description: MOSFET 2N-CH 60V 0.44A SOT563
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 650mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 440mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 32pF @ 25V
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 500mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 0.45nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Supplier Device Package: SOT-563
Grade: Automotive
Qualification: AEC-Q101
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DMT3006LFDF-13 DMT3006LFDF-13 Diodes Incorporated DMT3006LFDF.pdf Description: MOSFET N-CH 30V 14.1A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.1A (Ta)
Rds On (Max) @ Id, Vgs: 7mOhm @ 9A, 10V
Power Dissipation (Max): 800mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 3.7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 22.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1320 pF @ 15 V
Qualification: AEC-Q101
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DMT3006LFDF-13 DMT3006LFDF-13 Diodes Incorporated DMT3006LFDF.pdf Description: MOSFET N-CH 30V 14.1A 6UDFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.1A (Ta)
Rds On (Max) @ Id, Vgs: 7mOhm @ 9A, 10V
Power Dissipation (Max): 800mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 3.7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 22.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1320 pF @ 15 V
Qualification: AEC-Q101
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5000+0.27 EUR
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DMT6016LFDF-13 DMT6016LFDF-13 Diodes Incorporated DMT6016LFDF.pdf Description: MOSFET N-CH 60V 8.9A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.9A (Ta)
Rds On (Max) @ Id, Vgs: 16mOhm @ 10A, 10V
Power Dissipation (Max): 820mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 864 pF @ 30 V
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DMT6016LFDF-13 DMT6016LFDF-13 Diodes Incorporated DMT6016LFDF.pdf Description: MOSFET N-CH 60V 8.9A 6UDFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.9A (Ta)
Rds On (Max) @ Id, Vgs: 16mOhm @ 10A, 10V
Power Dissipation (Max): 820mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 864 pF @ 30 V
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DXTN3C60PSQ-13 DXTN3C60PSQ-13 Diodes Incorporated DXTN3C60PSQ.pdf Description: TRANS NPN 60V 3A POWERDI5060-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 175°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 270mV @ 300mA, 3A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Frequency - Transition: 140MHz
Supplier Device Package: PowerDI5060-8
Grade: Automotive
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 2.25 W
Qualification: AEC-Q101
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25000+0.26 EUR
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DXTN3C60PSQ-13 DXTN3C60PSQ-13 Diodes Incorporated DXTN3C60PSQ.pdf Description: TRANS NPN 60V 3A POWERDI5060-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 175°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 270mV @ 300mA, 3A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Frequency - Transition: 140MHz
Supplier Device Package: PowerDI5060-8
Grade: Automotive
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 2.25 W
Qualification: AEC-Q101
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74AHC126S14-13 74AHC126S14-13 Diodes Incorporated 74AHC126.pdf Description: IC BUFFER NON-INVERT 5.5V 14-SO
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 4
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: 14-SO
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74AHC126S14-13 74AHC126S14-13 Diodes Incorporated 74AHC126.pdf Description: IC BUFFER NON-INVERT 5.5V 14-SO
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 4
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: 14-SO
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MSB30TM MSB30TM Diodes Incorporated MSB30TM.pdf Description: BRIDGE RECT 1PHASE 1KV 3A MSBL
Packaging: Bulk
Package / Case: 4-SMD, Flat Leads
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: MSBL
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 3 A
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
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MSB30L08-13 Diodes Incorporated MSB30L08.pdf Description: LOW VOLTAGE BRIDGE MSBL T&R 2.5K
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Flat Leads
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C
Technology: Standard
Supplier Device Package: MSBL
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 3 A
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Produkt ist nicht verfügbar
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MSB30JL-13 Diodes Incorporated Description: BRIDGE RECT 1PHASE 600V 3A MSBL
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Flat Leads
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: MSBL
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 3 A
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
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AP1506-12K5L-13 AP1506-12K5L-13 Diodes Incorporated AP1506.pdf Description: IC REG BUCK 12V 3A TO263-5
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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74HCU04S14-13 74HCU04S14-13 Diodes Incorporated 74HCU04.pdf Description: IC INVERTER 6CH 1-INP 14SO
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 5.2mA, 5.2mA
Number of Inputs: 1
Supplier Device Package: 14-SO
Input Logic Level - High: 1.7V ~ 4.8V
Input Logic Level - Low: 0.3V ~ 1.2V
Max Propagation Delay @ V, Max CL: 12ns @ 6V, 50pF
Number of Circuits: 6
Current - Quiescent (Max): 20 µA
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74HCU04S14-13 74HCU04S14-13 Diodes Incorporated 74HCU04.pdf Description: IC INVERTER 6CH 1-INP 14SO
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 5.2mA, 5.2mA
Number of Inputs: 1
Supplier Device Package: 14-SO
Input Logic Level - High: 1.7V ~ 4.8V
Input Logic Level - Low: 0.3V ~ 1.2V
Max Propagation Delay @ V, Max CL: 12ns @ 6V, 50pF
Number of Circuits: 6
Current - Quiescent (Max): 20 µA
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68+0.26 EUR
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1000+0.19 EUR
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1.5KE350CA-B 1.5KE350CA-B Diodes Incorporated ds21503.pdf Description: TVS DIODE 300VWM 482VC DO201
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 4A
Voltage - Reverse Standoff (Typ): 300V
Supplier Device Package: DO-201
Bidirectional Channels: 1
Voltage - Breakdown (Min): 332V
Voltage - Clamping (Max) @ Ipp: 482V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Produkt ist nicht verfügbar
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QSBT40-13-F QSBT40-13-F Diodes Incorporated ds30195.pdf Description: TVS DIODE 30VWM SOT363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 10pF @ 1MHz
Voltage - Reverse Standoff (Typ): 30V
Supplier Device Package: SOT-363
Unidirectional Channels: 4
Voltage - Breakdown (Min): 30V
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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16+1.11 EUR
100+0.73 EUR
500+0.57 EUR
1000+0.51 EUR
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5000+0.46 EUR
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DMT3009LSS-13 DMT3009LSS-13 Diodes Incorporated DMT3009LSS.pdf Description: IC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 28A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 14.4A, 10V
Power Dissipation (Max): 1.4W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 807 pF @ 15 V
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DMT3009LSSQ-13 DMT3009LSSQ-13 Diodes Incorporated DMT3009LSSQ.pdf Description: MOSFET BVDSS: 25V~30V SO-8 T&R 2
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 28A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 14.4A, 10V
Power Dissipation (Max): 1.4W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): 20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 807 pF @ 15 V
Qualification: AEC-Q101
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AP7365-18EG-13 AP7365-18EG-13 Diodes Incorporated AP7365.pdf Description: IC REG LIN 1.8V 600MA SOT-223-3
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 600mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 80 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: SOT-223-3
Voltage - Output (Min/Fixed): 1.8V
PSRR: 65dB (1kHz)
Voltage Dropout (Max): 0.6V @ 600mA
Protection Features: Over Current, Over Temperature
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AP7365-18EG-13 AP7365-18EG-13 Diodes Incorporated AP7365.pdf Description: IC REG LIN 1.8V 600MA SOT-223-3
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 600mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 80 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: SOT-223-3
Voltage - Output (Min/Fixed): 1.8V
PSRR: 65dB (1kHz)
Voltage Dropout (Max): 0.6V @ 600mA
Protection Features: Over Current, Over Temperature
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DMP2109UCB6-7 Diodes Incorporated DMP2109UCB6.pdf Description: MOSFET BVDSS: 8V~24V U-WLB1510-6
Packaging: Tape & Reel (TR)
Package / Case: 6-UFBGA, WLBGA
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual) Common Source
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 840mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.25A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 269pF @ 10V
Rds On (Max) @ Id, Vgs: 108mOhm @ 1A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 2.1nC @ 4.5V
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: U-WLB1510-6 (Type C)
Produkt ist nicht verfügbar
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DMP2042UCB4-7 Diodes Incorporated Description: MOSFET P-CH 20V 4.6A U-WLB1010-4
Packaging: Tape & Reel (TR)
Package / Case: 4-UFBGA, WLBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 1A, 4.5V
Power Dissipation (Max): 1.4W
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: U-WLB1010-4
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): -6V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 2.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 218 pF @ 10 V
Produkt ist nicht verfügbar
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ZXCT210QBDW-7 ZXCT210QBDW-7 Diodes Incorporated ZXCT21xQ.pdf Description: CM VOLTAGE OUTPUT SOT363 T&R 3K
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Sensing Method: High/Low-Side
Mounting Type: Surface Mount
Function: Current Monitor
Voltage - Input: 2.7V ~ 26V
Accuracy: ±0.8%
Operating Temperature: -40°C ~ 125°C (TA)
Supplier Device Package: SOT-363
Grade: Automotive
Qualification: AEC-Q100
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ZXCT210QBDW-7 ZXCT210QBDW-7 Diodes Incorporated ZXCT21xQ.pdf Description: CM VOLTAGE OUTPUT SOT363 T&R 3K
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Sensing Method: High/Low-Side
Mounting Type: Surface Mount
Function: Current Monitor
Voltage - Input: 2.7V ~ 26V
Accuracy: ±0.8%
Operating Temperature: -40°C ~ 125°C (TA)
Supplier Device Package: SOT-363
Grade: Automotive
Qualification: AEC-Q100
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ZXCT210QCDW-7 ZXCT210QCDW-7 Diodes Incorporated ZXCT21xQ.pdf Description: CM VOLTAGE OUTPUT SOT363 T&R 3K
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Sensing Method: High/Low-Side
Mounting Type: Surface Mount
Function: Current Monitor
Voltage - Input: 2.7V ~ 26V
Accuracy: ±0.5%
Operating Temperature: -40°C ~ 125°C (TA)
Supplier Device Package: SOT-363
Grade: Automotive
Qualification: AEC-Q100
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ZXCT210QCDW-7 ZXCT210QCDW-7 Diodes Incorporated ZXCT21xQ.pdf Description: CM VOLTAGE OUTPUT SOT363 T&R 3K
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Sensing Method: High/Low-Side
Mounting Type: Surface Mount
Function: Current Monitor
Voltage - Input: 2.7V ~ 26V
Accuracy: ±0.5%
Operating Temperature: -40°C ~ 125°C (TA)
Supplier Device Package: SOT-363
Grade: Automotive
Qualification: AEC-Q100
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B350-13-F-2477 B350-13-F-2477 Diodes Incorporated Description: DIODE SCHOTTKY 50V 3A SMC
Packaging: Bulk
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 200pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: SMC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 20 V
Produkt ist nicht verfügbar
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AP61040CP6-7 Diodes Incorporated AP61040.pdf Description: DCDC CONV LV BUCK X1-WLB1208-6 T
Packaging: Tape & Reel (TR)
Package / Case: 6-XFBGA, WLBGA
Output Type: Programmable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 1.1MHz
Voltage - Input (Max): 5.5V
Topology: Buck
Supplier Device Package: X1-WLB1208-6
Synchronous Rectifier: Yes
Voltage - Output (Max): 3.3V
Voltage - Input (Min): 2.15V
Voltage - Output (Min/Fixed): 0.6V
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AP61040CP6-7 Diodes Incorporated AP61040.pdf Description: DCDC CONV LV BUCK X1-WLB1208-6 T
Packaging: Cut Tape (CT)
Package / Case: 6-XFBGA, WLBGA
Output Type: Programmable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 1.1MHz
Voltage - Input (Max): 5.5V
Topology: Buck
Supplier Device Package: X1-WLB1208-6
Synchronous Rectifier: Yes
Voltage - Output (Max): 3.3V
Voltage - Input (Min): 2.15V
Voltage - Output (Min/Fixed): 0.6V
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AP61041CP6-7 Diodes Incorporated AP61041.pdf Description: DCDC CONV LV BUCK X1-WLB1208-6 T
Packaging: Tape & Reel (TR)
Package / Case: 6-XFBGA, WLBGA
Output Type: Programmable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 0.4mA
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 1.1MHz
Voltage - Input (Max): 5.5V
Topology: Buck
Supplier Device Package: X1-WLB1208-6
Synchronous Rectifier: Yes
Voltage - Output (Max): 1.8V
Voltage - Input (Min): 2.15V
Voltage - Output (Min/Fixed): 0.6V
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AP61041CP6-7 Diodes Incorporated AP61041.pdf Description: DCDC CONV LV BUCK X1-WLB1208-6 T
Packaging: Cut Tape (CT)
Package / Case: 6-XFBGA, WLBGA
Output Type: Programmable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 0.4mA
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 1.1MHz
Voltage - Input (Max): 5.5V
Topology: Buck
Supplier Device Package: X1-WLB1208-6
Synchronous Rectifier: Yes
Voltage - Output (Max): 1.8V
Voltage - Input (Min): 2.15V
Voltage - Output (Min/Fixed): 0.6V
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ZLDO1117QG18TA ZLDO1117QG18TA Diodes Incorporated ZLDO1117Q.pdf Description: IC REG LINEAR 1.8V 1A SOT-223-3
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 10 mA
Voltage - Input (Max): 18V
Number of Regulators: 1
Supplier Device Package: SOT-223-3
Voltage - Output (Min/Fixed): 1.8V
PSRR: 80dB (120Hz)
Voltage Dropout (Max): 1.35V @ 1A
Protection Features: Over Current, Over Temperature, Short Circuit
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SMA6J24AQ-13 SMA6J24AQ-13 Diodes Incorporated ds45228.pdf Description: TVS DIODE 24VWM 38.9VC SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 15.4A
Voltage - Reverse Standoff (Typ): 24V
Supplier Device Package: SMA
Unidirectional Channels: 1
Voltage - Breakdown (Min): 26.7V
Voltage - Clamping (Max) @ Ipp: 38.9V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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FZT751TC FZT751TC Diodes Incorporated FZT751.pdf Description: TRANS PNP 60V 3A SOT-223-3
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 300mA, 3A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 2V
Frequency - Transition: 140MHz
Supplier Device Package: SOT-223-3
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 2 W
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FZT751TC FZT751TC Diodes Incorporated FZT751.pdf Description: TRANS PNP 60V 3A SOT-223-3
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 300mA, 3A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 2V
Frequency - Transition: 140MHz
Supplier Device Package: SOT-223-3
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 2 W
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ZXCT213CDW-7 ZXCT213CDW-7 Diodes Incorporated ZXCT21x.pdf Description: CM VOLTAGE OUTPUT SOT363 T&R 3K
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Sensing Method: High/Low-Side
Mounting Type: Surface Mount
Function: Current Monitor
Voltage - Input: 2.7V ~ 26V
Accuracy: ±0.5%
Operating Temperature: -40°C ~ 125°C (TA)
Supplier Device Package: SOT-363
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ZXCT213CDW-7 ZXCT213CDW-7 Diodes Incorporated ZXCT21x.pdf Description: CM VOLTAGE OUTPUT SOT363 T&R 3K
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Sensing Method: High/Low-Side
Mounting Type: Surface Mount
Function: Current Monitor
Voltage - Input: 2.7V ~ 26V
Accuracy: ±0.5%
Operating Temperature: -40°C ~ 125°C (TA)
Supplier Device Package: SOT-363
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1.5KE180CA-B 1.5KE180CA-B Diodes Incorporated ds21503.pdf Description: TVS DIODE 154VWM 246VC DO201
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 6.1A
Voltage - Reverse Standoff (Typ): 154V
Supplier Device Package: DO-201
Bidirectional Channels: 1
Voltage - Breakdown (Min): 171V
Voltage - Clamping (Max) @ Ipp: 246V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Produkt ist nicht verfügbar
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SMA6J28CAQ-13 SMA6J28CAQ-13 Diodes Incorporated ds45228.pdf Description: TVS DIODE 28VWM 45.4VC SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 13.2A
Voltage - Reverse Standoff (Typ): 28V
Supplier Device Package: SMA
Bidirectional Channels: 1
Voltage - Breakdown (Min): 31.1V
Voltage - Clamping (Max) @ Ipp: 45.4V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BC847BTQ-7 BC847BTQ-7 Diodes Incorporated BC847BTQ.pdf Description: TRANS NPN 45V 0.1A SOT-523
Packaging: Cut Tape (CT)
Package / Case: SOT-523
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-523
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 150 mW
Qualification: AEC-Q101
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1N4001-T 1N4001-T Diodes Incorporated ds28002.pdf Description: DIODE STANDARD 50V 1A DO41
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Produkt ist nicht verfügbar
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GBU10005 GBU10005 Diodes Incorporated ds30052.pdf Description: BRIDGE RECT 1PHASE 50V 10A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 10 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
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3.0SMCJ13A-13 3.0SMCJ13A-13 Diodes Incorporated 3.0SMCJ5.0CA-3.0SMCJ170CA.pdf Description: TVS DIODE 13VWM 21.5VC SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 139.5A
Voltage - Reverse Standoff (Typ): 13V
Supplier Device Package: SMC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 14.4V
Voltage - Clamping (Max) @ Ipp: 21.5V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
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5.0SMCJ13A-13-F 5.0SMCJ13A-13-F Diodes Incorporated ds45435.pdf Description: TRANSIENT VOLTAGE SUPPRESSOR PP
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 232.6A
Voltage - Reverse Standoff (Typ): 13V
Supplier Device Package: SMC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 14.4V
Voltage - Clamping (Max) @ Ipp: 21.5V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Produkt ist nicht verfügbar
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GBL406-TU Diodes Incorporated GBL406-GBL408.pdf Description: MEDIUM/HIGH POWER BRIDGE GBL TUB
Packaging: Tube
Package / Case: 4-SIP, GBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBL
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar
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DMT47M2SFVWQ-13 DMT47M2SFVWQ-13 Diodes Incorporated DMT47M2SFVWQ.pdf Description: MOSFET N-CH 40V PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.4A (Ta), 49.1A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 20A, 10V
Power Dissipation (Max): 2.67W (Ta), 27.1W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 12.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 897 pF @ 20 V
Qualification: AEC-Q101
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DMT47M2SFVWQ-13 DMT47M2SFVWQ-13 Diodes Incorporated DMT47M2SFVWQ.pdf Description: MOSFET N-CH 40V PWRDI3333
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.4A (Ta), 49.1A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 20A, 10V
Power Dissipation (Max): 2.67W (Ta), 27.1W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 12.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 897 pF @ 20 V
Qualification: AEC-Q101
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DXTP78100CFGQ-7 DXTP78100CFGQ-7 Diodes Incorporated DXTP78100CFGQ.pdf Description: PWR LOW SAT TRANSISTOR POWERDI33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP
Operating Temperature: -55°C ~ 175°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250mA, 2.5A
Current - Collector Cutoff (Max): 300nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 2V
Frequency - Transition: 290MHz
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Grade: Automotive
Current - Collector (Ic) (Max): 2.5 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 2.4 W
Qualification: AEC-Q101
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DXTP78100CFGQ-7 DXTP78100CFGQ-7 Diodes Incorporated DXTP78100CFGQ.pdf Description: PWR LOW SAT TRANSISTOR POWERDI33
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP
Operating Temperature: -55°C ~ 175°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250mA, 2.5A
Current - Collector Cutoff (Max): 300nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 2V
Frequency - Transition: 290MHz
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Grade: Automotive
Current - Collector (Ic) (Max): 2.5 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 2.4 W
Qualification: AEC-Q101
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DXTP78100CFG-7 DXTP78100CFG-7 Diodes Incorporated DXTP78100CFG.pdf Description: PWR LOW SAT TRANSISTOR POWERDI33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP
Operating Temperature: -55°C ~ 175°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250mA, 2.5A
Current - Collector Cutoff (Max): 300nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 2V
Frequency - Transition: 290MHz
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 900 mW
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MMBZ5239BT-7-G
Hersteller: Diodes Incorporated
Description: DIODE ZENER SOT523
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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DPC357S-A-TR DPC357+Series.pdf
DPC357S-A-TR
Hersteller: Diodes Incorporated
Description: OPTOISO 3.75KV 1CH TRANS 4-SOP
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 80% @ 5mA
Vce Saturation (Max): 200mV
Current Transfer Ratio (Max): 160% @ 5mA
Supplier Device Package: 4-SOP
Voltage - Output (Max): 80V
Rise / Fall Time (Typ): 18µs, 18µs (Max)
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
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DPC357S-B-TR DPC357+Series.pdf
DPC357S-B-TR
Hersteller: Diodes Incorporated
Description: OPTOISO 3.75KV 1CH TRANS 4-SOP
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 130% @ 5mA
Vce Saturation (Max): 200mV
Current Transfer Ratio (Max): 260% @ 5mA
Supplier Device Package: 4-SOP
Voltage - Output (Max): 80V
Rise / Fall Time (Typ): 18µs, 18µs (Max)
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
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50+0.35 EUR
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DMTH4M72SPGW-13 DMTH4M72SPGW.pdf
DMTH4M72SPGW-13
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 31V~40V POWERDI808
Packaging: Cut Tape (CT)
Package / Case: SOT-1235
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 584A (Tc)
Rds On (Max) @ Id, Vgs: 0.7mOhm @ 25A, 10V
Power Dissipation (Max): 5.6W (Ta), 441W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI8080-5
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 118 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9522 pF @ 20 V
Produkt ist nicht verfügbar
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DMTH4M72SPGWQ-13 DMTH4M72SPGWQ.pdf
DMTH4M72SPGWQ-13
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 31V~40V POWERDI808
Packaging: Cut Tape (CT)
Package / Case: SOT-1235
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 584A (Tc)
Rds On (Max) @ Id, Vgs: 0.7mOhm @ 25A, 10V
Power Dissipation (Max): 5.6W (Ta), 441W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI8080-5
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 118 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9522 pF @ 20 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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MBR2045CT MBR%28F%292045CT-2060CT.pdf
MBR2045CT
Hersteller: Diodes Incorporated
Description: DIODE ARR SCHOTT 45V 20A TO2203
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 45 V
Produkt ist nicht verfügbar
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MBR2045CTP ds31799.pdf
MBR2045CTP
Hersteller: Diodes Incorporated
Description: DIODE ARR SCHOTT 45V 10A ITO220S
Packaging: Tube
Package / Case: TO-220-3 Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: ITO-220S
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 45 V
Produkt ist nicht verfügbar
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MBR2535CT MBR2545CT-2560CT.pdf
MBR2535CT
Hersteller: Diodes Incorporated
Description: DIODE ARR SCHOTT 35V 30A TO2203
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 820 mV @ 30 A
Current - Reverse Leakage @ Vr: 200 µA @ 35 V
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DMG1026UVQ-7 DMG1026UVQ_NRND.pdf
DMG1026UVQ-7
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 60V 0.44A SOT563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 650mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 440mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 32pF @ 25V
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 500mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 0.45nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Supplier Device Package: SOT-563
Grade: Automotive
Qualification: AEC-Q101
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DMG1026UVQ-7 DMG1026UVQ_NRND.pdf
DMG1026UVQ-7
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 60V 0.44A SOT563
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 650mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 440mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 32pF @ 25V
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 500mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 0.45nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Supplier Device Package: SOT-563
Grade: Automotive
Qualification: AEC-Q101
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21+0.84 EUR
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DMT3006LFDF-13 DMT3006LFDF.pdf
DMT3006LFDF-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 14.1A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.1A (Ta)
Rds On (Max) @ Id, Vgs: 7mOhm @ 9A, 10V
Power Dissipation (Max): 800mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 3.7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 22.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1320 pF @ 15 V
Qualification: AEC-Q101
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DMT3006LFDF-13 DMT3006LFDF.pdf
DMT3006LFDF-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 14.1A 6UDFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.1A (Ta)
Rds On (Max) @ Id, Vgs: 7mOhm @ 9A, 10V
Power Dissipation (Max): 800mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 3.7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 22.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1320 pF @ 15 V
Qualification: AEC-Q101
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DMT6016LFDF-13 DMT6016LFDF.pdf
DMT6016LFDF-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 8.9A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.9A (Ta)
Rds On (Max) @ Id, Vgs: 16mOhm @ 10A, 10V
Power Dissipation (Max): 820mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 864 pF @ 30 V
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DMT6016LFDF-13 DMT6016LFDF.pdf
DMT6016LFDF-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 8.9A 6UDFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.9A (Ta)
Rds On (Max) @ Id, Vgs: 16mOhm @ 10A, 10V
Power Dissipation (Max): 820mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 864 pF @ 30 V
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13+1.44 EUR
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DXTN3C60PSQ-13 DXTN3C60PSQ.pdf
DXTN3C60PSQ-13
Hersteller: Diodes Incorporated
Description: TRANS NPN 60V 3A POWERDI5060-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 175°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 270mV @ 300mA, 3A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Frequency - Transition: 140MHz
Supplier Device Package: PowerDI5060-8
Grade: Automotive
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 2.25 W
Qualification: AEC-Q101
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2500+0.33 EUR
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DXTN3C60PSQ-13 DXTN3C60PSQ.pdf
DXTN3C60PSQ-13
Hersteller: Diodes Incorporated
Description: TRANS NPN 60V 3A POWERDI5060-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 175°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 270mV @ 300mA, 3A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Frequency - Transition: 140MHz
Supplier Device Package: PowerDI5060-8
Grade: Automotive
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 2.25 W
Qualification: AEC-Q101
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13+1.36 EUR
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74AHC126S14-13 74AHC126.pdf
74AHC126S14-13
Hersteller: Diodes Incorporated
Description: IC BUFFER NON-INVERT 5.5V 14-SO
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 4
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: 14-SO
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.16 EUR
5000+0.15 EUR
25000+0.14 EUR
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74AHC126S14-13 74AHC126.pdf
74AHC126S14-13
Hersteller: Diodes Incorporated
Description: IC BUFFER NON-INVERT 5.5V 14-SO
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 4
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: 14-SO
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
46+0.39 EUR
68+0.26 EUR
76+0.23 EUR
100+0.2 EUR
250+0.18 EUR
500+0.17 EUR
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MSB30TM MSB30TM.pdf
MSB30TM
Hersteller: Diodes Incorporated
Description: BRIDGE RECT 1PHASE 1KV 3A MSBL
Packaging: Bulk
Package / Case: 4-SMD, Flat Leads
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: MSBL
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 3 A
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
auf Bestellung 960000 Stücke:
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Anzahl Preis
2500+0.2 EUR
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MSB30L08-13 MSB30L08.pdf
Hersteller: Diodes Incorporated
Description: LOW VOLTAGE BRIDGE MSBL T&R 2.5K
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Flat Leads
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C
Technology: Standard
Supplier Device Package: MSBL
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 3 A
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Produkt ist nicht verfügbar
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MSB30JL-13
Hersteller: Diodes Incorporated
Description: BRIDGE RECT 1PHASE 600V 3A MSBL
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Flat Leads
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: MSBL
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 3 A
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.85 EUR
5000+0.81 EUR
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AP1506-12K5L-13 AP1506.pdf
AP1506-12K5L-13
Hersteller: Diodes Incorporated
Description: IC REG BUCK 12V 3A TO263-5
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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74HCU04S14-13 74HCU04.pdf
74HCU04S14-13
Hersteller: Diodes Incorporated
Description: IC INVERTER 6CH 1-INP 14SO
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 5.2mA, 5.2mA
Number of Inputs: 1
Supplier Device Package: 14-SO
Input Logic Level - High: 1.7V ~ 4.8V
Input Logic Level - Low: 0.3V ~ 1.2V
Max Propagation Delay @ V, Max CL: 12ns @ 6V, 50pF
Number of Circuits: 6
Current - Quiescent (Max): 20 µA
Produkt ist nicht verfügbar
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74HCU04S14-13 74HCU04.pdf
74HCU04S14-13
Hersteller: Diodes Incorporated
Description: IC INVERTER 6CH 1-INP 14SO
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 5.2mA, 5.2mA
Number of Inputs: 1
Supplier Device Package: 14-SO
Input Logic Level - High: 1.7V ~ 4.8V
Input Logic Level - Low: 0.3V ~ 1.2V
Max Propagation Delay @ V, Max CL: 12ns @ 6V, 50pF
Number of Circuits: 6
Current - Quiescent (Max): 20 µA
auf Bestellung 2485 Stücke:
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Anzahl Preis
42+0.42 EUR
60+0.3 EUR
68+0.26 EUR
100+0.22 EUR
250+0.21 EUR
500+0.2 EUR
1000+0.19 EUR
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1.5KE350CA-B ds21503.pdf
1.5KE350CA-B
Hersteller: Diodes Incorporated
Description: TVS DIODE 300VWM 482VC DO201
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 4A
Voltage - Reverse Standoff (Typ): 300V
Supplier Device Package: DO-201
Bidirectional Channels: 1
Voltage - Breakdown (Min): 332V
Voltage - Clamping (Max) @ Ipp: 482V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Produkt ist nicht verfügbar
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QSBT40-13-F ds30195.pdf
QSBT40-13-F
Hersteller: Diodes Incorporated
Description: TVS DIODE 30VWM SOT363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 10pF @ 1MHz
Voltage - Reverse Standoff (Typ): 30V
Supplier Device Package: SOT-363
Unidirectional Channels: 4
Voltage - Breakdown (Min): 30V
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 6600 Stücke:
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Anzahl Preis
10+1.78 EUR
16+1.11 EUR
100+0.73 EUR
500+0.57 EUR
1000+0.51 EUR
2000+0.47 EUR
5000+0.46 EUR
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DMT3009LSS-13 DMT3009LSS.pdf
DMT3009LSS-13
Hersteller: Diodes Incorporated
Description: IC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 28A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 14.4A, 10V
Power Dissipation (Max): 1.4W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 807 pF @ 15 V
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Anzahl Preis
2500+0.24 EUR
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DMT3009LSSQ-13 DMT3009LSSQ.pdf
DMT3009LSSQ-13
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 25V~30V SO-8 T&R 2
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 28A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 14.4A, 10V
Power Dissipation (Max): 1.4W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): 20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 807 pF @ 15 V
Qualification: AEC-Q101
auf Bestellung 15000 Stücke:
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Anzahl Preis
2500+0.27 EUR
5000+0.25 EUR
7500+0.24 EUR
12500+0.22 EUR
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AP7365-18EG-13 AP7365.pdf
AP7365-18EG-13
Hersteller: Diodes Incorporated
Description: IC REG LIN 1.8V 600MA SOT-223-3
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 600mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 80 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: SOT-223-3
Voltage - Output (Min/Fixed): 1.8V
PSRR: 65dB (1kHz)
Voltage Dropout (Max): 0.6V @ 600mA
Protection Features: Over Current, Over Temperature
auf Bestellung 17500 Stücke:
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2500+0.23 EUR
7500+0.22 EUR
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AP7365-18EG-13 AP7365.pdf
AP7365-18EG-13
Hersteller: Diodes Incorporated
Description: IC REG LIN 1.8V 600MA SOT-223-3
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 600mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 80 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: SOT-223-3
Voltage - Output (Min/Fixed): 1.8V
PSRR: 65dB (1kHz)
Voltage Dropout (Max): 0.6V @ 600mA
Protection Features: Over Current, Over Temperature
auf Bestellung 17500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
33+0.55 EUR
47+0.38 EUR
53+0.34 EUR
100+0.29 EUR
250+0.27 EUR
500+0.26 EUR
1000+0.24 EUR
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DMP2109UCB6-7 DMP2109UCB6.pdf
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 8V~24V U-WLB1510-6
Packaging: Tape & Reel (TR)
Package / Case: 6-UFBGA, WLBGA
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual) Common Source
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 840mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.25A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 269pF @ 10V
Rds On (Max) @ Id, Vgs: 108mOhm @ 1A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 2.1nC @ 4.5V
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: U-WLB1510-6 (Type C)
Produkt ist nicht verfügbar
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DMP2042UCB4-7
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 20V 4.6A U-WLB1010-4
Packaging: Tape & Reel (TR)
Package / Case: 4-UFBGA, WLBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 1A, 4.5V
Power Dissipation (Max): 1.4W
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: U-WLB1010-4
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): -6V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 2.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 218 pF @ 10 V
Produkt ist nicht verfügbar
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ZXCT210QBDW-7 ZXCT21xQ.pdf
ZXCT210QBDW-7
Hersteller: Diodes Incorporated
Description: CM VOLTAGE OUTPUT SOT363 T&R 3K
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Sensing Method: High/Low-Side
Mounting Type: Surface Mount
Function: Current Monitor
Voltage - Input: 2.7V ~ 26V
Accuracy: ±0.8%
Operating Temperature: -40°C ~ 125°C (TA)
Supplier Device Package: SOT-363
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 165000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.28 EUR
6000+0.27 EUR
15000+0.26 EUR
Mindestbestellmenge: 3000
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ZXCT210QBDW-7 ZXCT21xQ.pdf
ZXCT210QBDW-7
Hersteller: Diodes Incorporated
Description: CM VOLTAGE OUTPUT SOT363 T&R 3K
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Sensing Method: High/Low-Side
Mounting Type: Surface Mount
Function: Current Monitor
Voltage - Input: 2.7V ~ 26V
Accuracy: ±0.8%
Operating Temperature: -40°C ~ 125°C (TA)
Supplier Device Package: SOT-363
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 167980 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
28+0.65 EUR
39+0.45 EUR
44+0.4 EUR
100+0.35 EUR
250+0.32 EUR
500+0.31 EUR
1000+0.3 EUR
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ZXCT210QCDW-7 ZXCT21xQ.pdf
ZXCT210QCDW-7
Hersteller: Diodes Incorporated
Description: CM VOLTAGE OUTPUT SOT363 T&R 3K
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Sensing Method: High/Low-Side
Mounting Type: Surface Mount
Function: Current Monitor
Voltage - Input: 2.7V ~ 26V
Accuracy: ±0.5%
Operating Temperature: -40°C ~ 125°C (TA)
Supplier Device Package: SOT-363
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 108000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.29 EUR
6000+0.28 EUR
15000+0.27 EUR
Mindestbestellmenge: 3000
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ZXCT210QCDW-7 ZXCT21xQ.pdf
ZXCT210QCDW-7
Hersteller: Diodes Incorporated
Description: CM VOLTAGE OUTPUT SOT363 T&R 3K
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Sensing Method: High/Low-Side
Mounting Type: Surface Mount
Function: Current Monitor
Voltage - Input: 2.7V ~ 26V
Accuracy: ±0.5%
Operating Temperature: -40°C ~ 125°C (TA)
Supplier Device Package: SOT-363
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 110945 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
27+0.67 EUR
39+0.46 EUR
43+0.41 EUR
100+0.36 EUR
250+0.33 EUR
500+0.32 EUR
1000+0.3 EUR
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B350-13-F-2477
B350-13-F-2477
Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 50V 3A SMC
Packaging: Bulk
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 200pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: SMC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 20 V
Produkt ist nicht verfügbar
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AP61040CP6-7 AP61040.pdf
Hersteller: Diodes Incorporated
Description: DCDC CONV LV BUCK X1-WLB1208-6 T
Packaging: Tape & Reel (TR)
Package / Case: 6-XFBGA, WLBGA
Output Type: Programmable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 1.1MHz
Voltage - Input (Max): 5.5V
Topology: Buck
Supplier Device Package: X1-WLB1208-6
Synchronous Rectifier: Yes
Voltage - Output (Max): 3.3V
Voltage - Input (Min): 2.15V
Voltage - Output (Min/Fixed): 0.6V
auf Bestellung 15000 Stücke:
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Anzahl Preis
3000+0.17 EUR
6000+0.16 EUR
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AP61040CP6-7 AP61040.pdf
Hersteller: Diodes Incorporated
Description: DCDC CONV LV BUCK X1-WLB1208-6 T
Packaging: Cut Tape (CT)
Package / Case: 6-XFBGA, WLBGA
Output Type: Programmable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 1.1MHz
Voltage - Input (Max): 5.5V
Topology: Buck
Supplier Device Package: X1-WLB1208-6
Synchronous Rectifier: Yes
Voltage - Output (Max): 3.3V
Voltage - Input (Min): 2.15V
Voltage - Output (Min/Fixed): 0.6V
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
44+0.4 EUR
64+0.28 EUR
72+0.25 EUR
100+0.21 EUR
250+0.19 EUR
500+0.18 EUR
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AP61041CP6-7 AP61041.pdf
Hersteller: Diodes Incorporated
Description: DCDC CONV LV BUCK X1-WLB1208-6 T
Packaging: Tape & Reel (TR)
Package / Case: 6-XFBGA, WLBGA
Output Type: Programmable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 0.4mA
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 1.1MHz
Voltage - Input (Max): 5.5V
Topology: Buck
Supplier Device Package: X1-WLB1208-6
Synchronous Rectifier: Yes
Voltage - Output (Max): 1.8V
Voltage - Input (Min): 2.15V
Voltage - Output (Min/Fixed): 0.6V
auf Bestellung 18000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.19 EUR
6000+0.18 EUR
15000+0.17 EUR
Mindestbestellmenge: 3000
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AP61041CP6-7 AP61041.pdf
Hersteller: Diodes Incorporated
Description: DCDC CONV LV BUCK X1-WLB1208-6 T
Packaging: Cut Tape (CT)
Package / Case: 6-XFBGA, WLBGA
Output Type: Programmable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 0.4mA
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 1.1MHz
Voltage - Input (Max): 5.5V
Topology: Buck
Supplier Device Package: X1-WLB1208-6
Synchronous Rectifier: Yes
Voltage - Output (Max): 1.8V
Voltage - Input (Min): 2.15V
Voltage - Output (Min/Fixed): 0.6V
auf Bestellung 18000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
40+0.44 EUR
58+0.31 EUR
65+0.27 EUR
100+0.23 EUR
250+0.22 EUR
500+0.21 EUR
1000+0.2 EUR
Mindestbestellmenge: 40
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ZLDO1117QG18TA ZLDO1117Q.pdf
ZLDO1117QG18TA
Hersteller: Diodes Incorporated
Description: IC REG LINEAR 1.8V 1A SOT-223-3
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 10 mA
Voltage - Input (Max): 18V
Number of Regulators: 1
Supplier Device Package: SOT-223-3
Voltage - Output (Min/Fixed): 1.8V
PSRR: 80dB (120Hz)
Voltage Dropout (Max): 1.35V @ 1A
Protection Features: Over Current, Over Temperature, Short Circuit
auf Bestellung 8770 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
22+0.81 EUR
31+0.57 EUR
35+0.51 EUR
100+0.44 EUR
250+0.41 EUR
500+0.39 EUR
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SMA6J24AQ-13 ds45228.pdf
SMA6J24AQ-13
Hersteller: Diodes Incorporated
Description: TVS DIODE 24VWM 38.9VC SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 15.4A
Voltage - Reverse Standoff (Typ): 24V
Supplier Device Package: SMA
Unidirectional Channels: 1
Voltage - Breakdown (Min): 26.7V
Voltage - Clamping (Max) @ Ipp: 38.9V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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FZT751TC FZT751.pdf
FZT751TC
Hersteller: Diodes Incorporated
Description: TRANS PNP 60V 3A SOT-223-3
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 300mA, 3A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 2V
Frequency - Transition: 140MHz
Supplier Device Package: SOT-223-3
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 2 W
auf Bestellung 204000 Stücke:
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FZT751TC FZT751.pdf
FZT751TC
Hersteller: Diodes Incorporated
Description: TRANS PNP 60V 3A SOT-223-3
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 300mA, 3A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 2V
Frequency - Transition: 140MHz
Supplier Device Package: SOT-223-3
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 2 W
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15+1.17 EUR
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500+0.6 EUR
1000+0.55 EUR
2000+0.5 EUR
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ZXCT213CDW-7 ZXCT21x.pdf
ZXCT213CDW-7
Hersteller: Diodes Incorporated
Description: CM VOLTAGE OUTPUT SOT363 T&R 3K
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Sensing Method: High/Low-Side
Mounting Type: Surface Mount
Function: Current Monitor
Voltage - Input: 2.7V ~ 26V
Accuracy: ±0.5%
Operating Temperature: -40°C ~ 125°C (TA)
Supplier Device Package: SOT-363
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3000+0.26 EUR
6000+0.25 EUR
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ZXCT213CDW-7 ZXCT21x.pdf
ZXCT213CDW-7
Hersteller: Diodes Incorporated
Description: CM VOLTAGE OUTPUT SOT363 T&R 3K
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Sensing Method: High/Low-Side
Mounting Type: Surface Mount
Function: Current Monitor
Voltage - Input: 2.7V ~ 26V
Accuracy: ±0.5%
Operating Temperature: -40°C ~ 125°C (TA)
Supplier Device Package: SOT-363
auf Bestellung 164725 Stücke:
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Anzahl Preis
30+0.6 EUR
43+0.42 EUR
48+0.37 EUR
100+0.32 EUR
250+0.3 EUR
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1.5KE180CA-B ds21503.pdf
1.5KE180CA-B
Hersteller: Diodes Incorporated
Description: TVS DIODE 154VWM 246VC DO201
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 6.1A
Voltage - Reverse Standoff (Typ): 154V
Supplier Device Package: DO-201
Bidirectional Channels: 1
Voltage - Breakdown (Min): 171V
Voltage - Clamping (Max) @ Ipp: 246V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
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SMA6J28CAQ-13 ds45228.pdf
SMA6J28CAQ-13
Hersteller: Diodes Incorporated
Description: TVS DIODE 28VWM 45.4VC SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 13.2A
Voltage - Reverse Standoff (Typ): 28V
Supplier Device Package: SMA
Bidirectional Channels: 1
Voltage - Breakdown (Min): 31.1V
Voltage - Clamping (Max) @ Ipp: 45.4V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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BC847BTQ-7 BC847BTQ.pdf
BC847BTQ-7
Hersteller: Diodes Incorporated
Description: TRANS NPN 45V 0.1A SOT-523
Packaging: Cut Tape (CT)
Package / Case: SOT-523
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-523
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 150 mW
Qualification: AEC-Q101
auf Bestellung 1590195 Stücke:
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Anzahl Preis
59+0.3 EUR
95+0.19 EUR
154+0.11 EUR
500+0.084 EUR
1000+0.074 EUR
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1N4001-T ds28002.pdf
1N4001-T
Hersteller: Diodes Incorporated
Description: DIODE STANDARD 50V 1A DO41
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
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GBU10005 ds30052.pdf
GBU10005
Hersteller: Diodes Incorporated
Description: BRIDGE RECT 1PHASE 50V 10A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 10 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
auf Bestellung 280 Stücke:
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6+3.34 EUR
20+1.89 EUR
100+1.46 EUR
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3.0SMCJ13A-13 3.0SMCJ5.0CA-3.0SMCJ170CA.pdf
3.0SMCJ13A-13
Hersteller: Diodes Incorporated
Description: TVS DIODE 13VWM 21.5VC SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 139.5A
Voltage - Reverse Standoff (Typ): 13V
Supplier Device Package: SMC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 14.4V
Voltage - Clamping (Max) @ Ipp: 21.5V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
auf Bestellung 27000 Stücke:
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Anzahl Preis
3000+0.35 EUR
6000+0.32 EUR
9000+0.31 EUR
15000+0.3 EUR
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5.0SMCJ13A-13-F ds45435.pdf
5.0SMCJ13A-13-F
Hersteller: Diodes Incorporated
Description: TRANSIENT VOLTAGE SUPPRESSOR PP
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 232.6A
Voltage - Reverse Standoff (Typ): 13V
Supplier Device Package: SMC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 14.4V
Voltage - Clamping (Max) @ Ipp: 21.5V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Produkt ist nicht verfügbar
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GBL406-TU GBL406-GBL408.pdf
Hersteller: Diodes Incorporated
Description: MEDIUM/HIGH POWER BRIDGE GBL TUB
Packaging: Tube
Package / Case: 4-SIP, GBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBL
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar
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DMT47M2SFVWQ-13 DMT47M2SFVWQ.pdf
DMT47M2SFVWQ-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 40V PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.4A (Ta), 49.1A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 20A, 10V
Power Dissipation (Max): 2.67W (Ta), 27.1W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 12.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 897 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
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DMT47M2SFVWQ-13 DMT47M2SFVWQ.pdf
DMT47M2SFVWQ-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 40V PWRDI3333
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.4A (Ta), 49.1A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 20A, 10V
Power Dissipation (Max): 2.67W (Ta), 27.1W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 12.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 897 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 3344 Stücke:
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Anzahl Preis
13+1.36 EUR
21+0.84 EUR
100+0.55 EUR
500+0.42 EUR
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DXTP78100CFGQ-7 DXTP78100CFGQ.pdf
DXTP78100CFGQ-7
Hersteller: Diodes Incorporated
Description: PWR LOW SAT TRANSISTOR POWERDI33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP
Operating Temperature: -55°C ~ 175°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250mA, 2.5A
Current - Collector Cutoff (Max): 300nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 2V
Frequency - Transition: 290MHz
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Grade: Automotive
Current - Collector (Ic) (Max): 2.5 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 2.4 W
Qualification: AEC-Q101
auf Bestellung 8000 Stücke:
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2000+0.32 EUR
4000+0.31 EUR
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DXTP78100CFGQ-7 DXTP78100CFGQ.pdf
DXTP78100CFGQ-7
Hersteller: Diodes Incorporated
Description: PWR LOW SAT TRANSISTOR POWERDI33
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP
Operating Temperature: -55°C ~ 175°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250mA, 2.5A
Current - Collector Cutoff (Max): 300nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 2V
Frequency - Transition: 290MHz
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Grade: Automotive
Current - Collector (Ic) (Max): 2.5 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 2.4 W
Qualification: AEC-Q101
auf Bestellung 9900 Stücke:
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25+0.72 EUR
35+0.51 EUR
39+0.45 EUR
100+0.39 EUR
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DXTP78100CFG-7 DXTP78100CFG.pdf
DXTP78100CFG-7
Hersteller: Diodes Incorporated
Description: PWR LOW SAT TRANSISTOR POWERDI33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP
Operating Temperature: -55°C ~ 175°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250mA, 2.5A
Current - Collector Cutoff (Max): 300nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 2V
Frequency - Transition: 290MHz
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 900 mW
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