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DMC3020UDVW-13 DMC3020UDVW-13 Diodes Incorporated DMC3020UDVW.pdf Description: MOSFET N/P-CH 30V 20A PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.18W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc), 17A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 383pF @ 15V, 782pF @ 15V
Rds On (Max) @ Id, Vgs: 31mOhm @ 6A, 10V, 42mOhm @ 4.9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8.8nC @ 10V, 13.6nC @ 10V
Vgs(th) (Max) @ Id: 1.85V @ 250µA, 2.1V @ 250µA
Supplier Device Package: PowerDI3333-8 (Type UXD)
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DMC3020UDVW-7 DMC3020UDVW-7 Diodes Incorporated DMC3020UDVW.pdf Description: MOSFET N/P-CH 30V 20A PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.18W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc), 17A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 383pF @ 15V, 782pF @ 15V
Rds On (Max) @ Id, Vgs: 31mOhm @ 6A, 10V, 42mOhm @ 4.9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8.8nC @ 10V, 13.6nC @ 10V
Vgs(th) (Max) @ Id: 1.85V @ 250µA, 2.1V @ 250µA
Supplier Device Package: PowerDI3333-8 (Type UXD)
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DMC3020UDVWQ-13 Diodes Incorporated DMC3020UDVWQ.pdf Description: MOSFET BVDSS: 8V~24V POWERDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 1.18W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc), 17A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 383pF @ 15V, 782pF @ 15V
Rds On (Max) @ Id, Vgs: 31mOhm @ 6A, 10V, 42mOhm @ 4.9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8.8nC @ 10V, 13.6nC @ 10V
Vgs(th) (Max) @ Id: 1.85V @ 250µA, 2.1V @ 250µA
Supplier Device Package: PowerDI3333-8 (SWP) (Type UXD)
Grade: Automotive
Qualification: AEC-Q101
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DMC3020UDVWQ-7 Diodes Incorporated DMC3020UDVWQ.pdf Description: MOSFET BVDSS: 8V~24V POWERDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 1.18W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc), 17A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 383pF @ 15V, 782pF @ 15V
Rds On (Max) @ Id, Vgs: 31mOhm @ 6A, 10V, 42mOhm @ 4.9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8.8nC @ 10V, 13.6nC @ 10V
Vgs(th) (Max) @ Id: 1.85V @ 250µA, 2.1V @ 250µA
Supplier Device Package: PowerDI3333-8 (SWP) (Type UXD)
Grade: Automotive
Qualification: AEC-Q101
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1.5KE400A-B 1.5KE400A-B Diodes Incorporated ds21503.pdf Description: TVS DIODE 342VWM 548VC DO201
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 4A
Voltage - Reverse Standoff (Typ): 342V
Supplier Device Package: DO-201
Unidirectional Channels: 1
Voltage - Breakdown (Min): 380V
Voltage - Clamping (Max) @ Ipp: 548V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
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74LVC1G08FX4-7 74LVC1G08FX4-7 Diodes Incorporated 74LVC1G08.pdf Description: IC GATE AND 1CH 2-INP DFN1409-6
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 2
Supplier Device Package: X2-DFN1409-6
Input Logic Level - High: 1.7V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.8V
Max Propagation Delay @ V, Max CL: 5.5ns @ 3.3V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 200 µA
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74LVC1G08FX4-7 74LVC1G08FX4-7 Diodes Incorporated 74LVC1G08.pdf Description: IC GATE AND 1CH 2-INP DFN1409-6
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 2
Supplier Device Package: X2-DFN1409-6
Input Logic Level - High: 1.7V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.8V
Max Propagation Delay @ V, Max CL: 5.5ns @ 3.3V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 200 µA
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MBR4060PT MBR4060PT Diodes Incorporated ds23019.pdf description Description: DIODE ARRAY SCHOTT 60V 40A TO-3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 40A
Supplier Device Package: TO-3P
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 20 A
Current - Reverse Leakage @ Vr: 1 mA @ 60 V
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74LVC1G125FS3-7 74LVC1G125FS3-7 Diodes Incorporated 74LVC1G125.pdf Description: IC BUFF 1.65V X2-DFN0808-4
Packaging: Tape & Reel (TR)
Package / Case: 4-XFDFN Exposed Pad
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: 32mA, 32mA
Supplier Device Package: X2-DFN0808-4
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74LVC1G125FS3-7 74LVC1G125FS3-7 Diodes Incorporated 74LVC1G125.pdf Description: IC BUFF 1.65V X2-DFN0808-4
Packaging: Cut Tape (CT)
Package / Case: 4-XFDFN Exposed Pad
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: 32mA, 32mA
Supplier Device Package: X2-DFN0808-4
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74LVC1G125FX4-7 74LVC1G125FX4-7 Diodes Incorporated 74LVC1G125.pdf Description: IC BUFF 1.65V X2-DFN1409-6
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: 32mA, 32mA
Supplier Device Package: X2-DFN1409-6
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74LVC1G125FX4-7 74LVC1G125FX4-7 Diodes Incorporated 74LVC1G125.pdf Description: IC BUFF 1.65V X2-DFN1409-6
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: 32mA, 32mA
Supplier Device Package: X2-DFN1409-6
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FH1200001-W FH1200001-W Diodes Incorporated FH.pdf Description: CRYSTAL CERAMIC SEAM2520 T&R 3K
Packaging: Tape & Reel (TR)
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FH1200001-W FH1200001-W Diodes Incorporated FH.pdf Description: CRYSTAL CERAMIC SEAM2520 T&R 3K
Packaging: Cut Tape (CT)
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DMP610DL-13 DMP610DL-13 Diodes Incorporated DMP610DL.pdf Description: MOSFET BVDSS: 41V 60V SOT23 T&R
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 180mA (Ta)
Rds On (Max) @ Id, Vgs: 10Ohm @ 100mA, 5V
Power Dissipation (Max): 310mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 24.6 pF @ 25 V
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DMP610DL-13 DMP610DL-13 Diodes Incorporated DMP610DL.pdf Description: MOSFET BVDSS: 41V 60V SOT23 T&R
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 180mA (Ta)
Rds On (Max) @ Id, Vgs: 10Ohm @ 100mA, 5V
Power Dissipation (Max): 310mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 24.6 pF @ 25 V
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PI3WVR13412AZHEX PI3WVR13412AZHEX Diodes Incorporated PI3WVR13412A.pdf Description: DISPLAY SWITCH V-QFN3590-42 T&R
Packaging: Tape & Reel (TR)
Features: HDMI
Package / Case: 42-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 70°C
Applications: Video
-3db Bandwidth: 7GHz
Supplier Device Package: 42-TQFN (9x3.5)
Voltage - Supply, Single (V+): 3V ~ 3.6V
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Number of Channels: 4
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PI3WVR13412AZHEX PI3WVR13412AZHEX Diodes Incorporated PI3WVR13412A.pdf Description: DISPLAY SWITCH V-QFN3590-42 T&R
Packaging: Cut Tape (CT)
Features: HDMI
Package / Case: 42-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 70°C
Applications: Video
-3db Bandwidth: 7GHz
Supplier Device Package: 42-TQFN (9x3.5)
Voltage - Supply, Single (V+): 3V ~ 3.6V
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Number of Channels: 4
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FK5000055Q FK5000055Q Diodes Incorporated FK5000055Q.pdf Description: XTAL OSC XO 50.0000MHZ CMOS SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±25ppm
Voltage - Supply: 3.3V
Ratings: AEC-Q200
Current - Supply (Max): 8mA
Supplier Device Package: 4-VDFN (3.2x2.5)
Height - Seated (Max): 0.045" (1.15mm)
Frequency: 50 MHz
Base Resonator: Crystal
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FK5000055Q FK5000055Q Diodes Incorporated FK5000055Q.pdf Description: XTAL OSC XO 50.0000MHZ CMOS SMD
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±25ppm
Voltage - Supply: 3.3V
Ratings: AEC-Q200
Current - Supply (Max): 8mA
Supplier Device Package: 4-VDFN (3.2x2.5)
Height - Seated (Max): 0.045" (1.15mm)
Frequency: 50 MHz
Base Resonator: Crystal
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ADTC143ZLP4WQ-7B Diodes Incorporated ADTC143ZLP4WQ.pdf Description: PREBIAS TRANSISTOR U-DFN1006-3 T
Packaging: Tape & Reel (TR)
Package / Case: 3-UFDFN
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Supplier Device Package: U-DFN1006-3/SWP (Type UX)
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 255 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
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ADTC114YLP4WQ-7B Diodes Incorporated ADTC114YLP4WQ.pdf Description: PREBIAS TRANSISTOR U-DFN1006-3 T
Packaging: Tape & Reel (TR)
Package / Case: 3-UFDFN
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 5V
Supplier Device Package: U-DFN1006-3/SWP (Type UX)
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 255 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
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ADTC144ELP4WQ-7B Diodes Incorporated ADTC144ELP4WQ.pdf Description: PREBIAS TRANSISTOR U-DFN1003-3 T
Packaging: Tape & Reel (TR)
Package / Case: 3-UFDFN
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V
Supplier Device Package: U-DFN1006-3/SWP (Type UX)
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 255 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
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ADTA144ELP4WQ-7B Diodes Incorporated ADTA144ELP4WQ.pdf Description: PREBIAS TRANSISTOR U-DFN1003-3 T
Packaging: Tape & Reel (TR)
Package / Case: 3-UFDFN
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V
Supplier Device Package: U-DFN1006-3/SWP (Type UX)
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 255 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
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ADTC114ELP4WQ-7B Diodes Incorporated ADTC114ELP4WQ.pdf Description: PREBIAS TRANSISTOR U-DFN1006-3 T
Packaging: Tape & Reel (TR)
Package / Case: 3-UFDFN
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Supplier Device Package: U-DFN1006-3/SWP (Type UX)
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 255 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Qualification: AEC-Q101
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ADTC143ZLP4WQ-7 Diodes Incorporated ADTC143ZLP4WQ.pdf Description: PREBIAS TRANSISTOR U-DFN1006-3 T
Packaging: Tape & Reel (TR)
Package / Case: 3-UFDFN
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Supplier Device Package: U-DFN1006-3/SWP (Type UX)
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 255 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
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ADTC144ELP4WQ-7 Diodes Incorporated ADTC144ELP4WQ.pdf Description: PREBIAS TRANSISTOR U-DFN1003-3 T
Packaging: Tape & Reel (TR)
Package / Case: 3-UFDFN
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V
Supplier Device Package: U-DFN1006-3/SWP (Type UX)
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 255 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
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ADTA144ELP4WQ-7 Diodes Incorporated ADTA144ELP4WQ.pdf Description: PREBIAS TRANSISTOR U-DFN1003-3 T
Packaging: Tape & Reel (TR)
Package / Case: 3-UFDFN
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V
Supplier Device Package: U-DFN1006-3/SWP (Type UX)
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 255 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
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ADTC114ELP4WQ-7 Diodes Incorporated ADTC114ELP4WQ.pdf Description: PREBIAS TRANSISTOR U-DFN1006-3 T
Packaging: Tape & Reel (TR)
Package / Case: 3-UFDFN
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Supplier Device Package: U-DFN1006-3/SWP (Type UX)
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 255 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Qualification: AEC-Q101
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ADTC114YLP4WQ-7 Diodes Incorporated ADTC114YLP4WQ.pdf Description: PREBIAS TRANSISTOR U-DFN1006-3 T
Packaging: Tape & Reel (TR)
Package / Case: 3-UFDFN
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 5V
Supplier Device Package: U-DFN1006-3/SWP (Type UX)
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 255 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
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DGD44175WU-7 DGD44175WU-7 Diodes Incorporated DGD44175.pdf Description: HV GATE DRIVER TSOT26 T&R 3K
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 13.2V ~ 20V
Input Type: Non-Inverting
Supplier Device Package: TSOT-26
Rise / Fall Time (Typ): 10ns, 9ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: IGBT
Logic Voltage - VIL, VIH: 0.8V, 2.4V
Current - Peak Output (Source, Sink): 3.2A, 2.6A
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DGD44175WU-7 DGD44175WU-7 Diodes Incorporated DGD44175.pdf Description: HV GATE DRIVER TSOT26 T&R 3K
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 13.2V ~ 20V
Input Type: Non-Inverting
Supplier Device Package: TSOT-26
Rise / Fall Time (Typ): 10ns, 9ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: IGBT
Logic Voltage - VIL, VIH: 0.8V, 2.4V
Current - Peak Output (Source, Sink): 3.2A, 2.6A
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AH1902-Z-7 AH1902-Z-7 Diodes Incorporated AH1902.pdf Description: MAGNETIC SWITCH OMNIPOLAR SOT553
Packaging: Tape & Reel (TR)
Package / Case: SOT-553
Output Type: Push-Pull
Polarization: North Pole, South Pole
Mounting Type: Surface Mount
Function: Omnipolar Switch
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.6V ~ 3.6V
Technology: Hall Effect
Sensing Range: ±4.8mT Trip, ±3.8mT Release
Current - Output (Max): 3mA
Current - Supply (Max): 8µA
Supplier Device Package: SOT-553
Test Condition: -40°C ~ 85°C
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AH1902-Z-7 AH1902-Z-7 Diodes Incorporated AH1902.pdf Description: MAGNETIC SWITCH OMNIPOLAR SOT553
Packaging: Cut Tape (CT)
Package / Case: SOT-553
Output Type: Push-Pull
Polarization: North Pole, South Pole
Mounting Type: Surface Mount
Function: Omnipolar Switch
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.6V ~ 3.6V
Technology: Hall Effect
Sensing Range: ±4.8mT Trip, ±3.8mT Release
Current - Output (Max): 3mA
Current - Supply (Max): 8µA
Supplier Device Package: SOT-553
Test Condition: -40°C ~ 85°C
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74LVC1G34Z-7 74LVC1G34Z-7 Diodes Incorporated 74LVC1G34.pdf Description: IC BUFF NON-INVERT 5.5V SOT-553
Packaging: Tape & Reel (TR)
Package / Case: SOT-553
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: 32mA, 32mA
Supplier Device Package: SOT-553
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74LVC1G34Z-7 74LVC1G34Z-7 Diodes Incorporated 74LVC1G34.pdf Description: IC BUFF NON-INVERT 5.5V SOT-553
Packaging: Cut Tape (CT)
Package / Case: SOT-553
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: 32mA, 32mA
Supplier Device Package: SOT-553
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AH3360-Z-7 AH3360-Z-7 Diodes Incorporated AH3360.pdf Description: MAGNETIC SWITCH UNIPOLAR SOT553
Packaging: Tape & Reel (TR)
Package / Case: SOT-553
Output Type: Push-Pull
Polarization: South Pole
Mounting Type: Surface Mount
Function: Unipolar Switch
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.6V ~ 3.6V
Technology: Hall Effect
Sensing Range: 4.6mT Trip, 0.9mT Release
Current - Output (Max): 3mA
Current - Supply (Max): 8µA
Supplier Device Package: SOT-553
Test Condition: -40°C ~ 85°C
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AH3360-Z-7 AH3360-Z-7 Diodes Incorporated AH3360.pdf Description: MAGNETIC SWITCH UNIPOLAR SOT553
Packaging: Cut Tape (CT)
Package / Case: SOT-553
Output Type: Push-Pull
Polarization: South Pole
Mounting Type: Surface Mount
Function: Unipolar Switch
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.6V ~ 3.6V
Technology: Hall Effect
Sensing Range: 4.6mT Trip, 0.9mT Release
Current - Output (Max): 3mA
Current - Supply (Max): 8µA
Supplier Device Package: SOT-553
Test Condition: -40°C ~ 85°C
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PI3EQX7502AIZDE+DAX Diodes Incorporated Description: IC REDRIVER USB 3.0 2CH 24TQFN
Packaging: Tape & Reel (TR)
Package / Case: 24-VFQFN Exposed Pad
Delay Time: 305ps
Number of Channels: 2
Mounting Type: Surface Mount
Output: CML
Type: Buffer, ReDriver
Input: CML
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 3.6V
Applications: USB 3.0
Current - Supply: 125mA
Data Rate (Max): 5Gbps
Supplier Device Package: 24-TQFN (4x4)
Signal Conditioning: Input Equalization, Output De-Emphasis
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PI3EQX7502AIZDE+DAX Diodes Incorporated Description: IC REDRIVER USB 3.0 2CH 24TQFN
Packaging: Cut Tape (CT)
Package / Case: 24-VFQFN Exposed Pad
Delay Time: 305ps
Number of Channels: 2
Mounting Type: Surface Mount
Output: CML
Type: Buffer, ReDriver
Input: CML
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 3.6V
Applications: USB 3.0
Current - Supply: 125mA
Data Rate (Max): 5Gbps
Supplier Device Package: 24-TQFN (4x4)
Signal Conditioning: Input Equalization, Output De-Emphasis
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GBJ2010 GBJ2010 Diodes Incorporated GBJ20005%7EGBJ2010.pdf Description: BRIDGE RECT 1PHASE 1KV 20A GBJ
Packaging: Tube
Package / Case: 4-SIP, GBJ
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBJ
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 20 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
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DMP2100UQ-7 DMP2100UQ-7 Diodes Incorporated DMP2100UQ.pdf Description: MOSFET BVDSS: 25V~30V SOT23 T&R
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta)
Rds On (Max) @ Id, Vgs: 38mOhm @ 3.5A, 10V
Power Dissipation (Max): 800mW (Ta)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: SOT-23-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 9.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 216 pF @ 15 V
Qualification: AEC-Q101
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BAS40WQ-13-F BAS40WQ-13-F Diodes Incorporated BAS40WQ.pdf Description: DIODE SCHOTTKY 40V 200MA SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-323
Operating Temperature - Junction: -55°C ~ 125°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Current - Reverse Leakage @ Vr: 200 nA @ 30 V
Qualification: AEC-Q101
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BC817-16FHW-7 Diodes Incorporated ds47265.pdf Description: GENERAL PURPOSE TRANSISTOR U-DFN
Packaging: Tape & Reel (TR)
Package / Case: 3-PowerUDFN
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: U-DFN1110-3 (SWP) (Type A)
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 460 mW
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BSP75NQ-13 Diodes Incorporated Description: LOW SIDE INTELLIFET SOT223 T&R 4
Packaging: Cut Tape (CT)
Features: Auto Restart
Package / Case: TO-261-4, TO-261AA
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 385mOhm
Input Type: Non-Inverting
Voltage - Load: 60V
Current - Output (Max): 1.1A
Ratio - Input:Output: 1:1
Supplier Device Package: SOT-223-3
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage, Short Circuit
Grade: Automotive
Qualification: AEC-Q101
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BSP75N-13 Diodes Incorporated Description: LOW SIDE INTELLIFET SOT223 T&R 4
Packaging: Cut Tape (CT)
Features: Auto Restart
Package / Case: TO-261-4, TO-261AA
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 385mOhm
Input Type: Non-Inverting
Voltage - Load: 60V
Current - Output (Max): 1.1A
Ratio - Input:Output: 1:1
Supplier Device Package: SOT-223-3
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage, Short Circuit
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FH2400020 FH2400020 Diodes Incorporated FH.pdf Description: CRYSTAL 24.0000MHZ 20PF SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Load Capacitance: 20pF
Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm)
Mounting Type: Surface Mount
Type: MHz Crystal
Operating Temperature: -20°C ~ 70°C
Frequency Stability: ±20ppm
Frequency Tolerance: ±20ppm
Operating Mode: Fundamental
Supplier Device Package: 4-SMD (2.5x2)
Height - Seated (Max): 0.028" (0.70mm)
ESR (Equivalent Series Resistance): 80 Ohms
Frequency: 24 MHz
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FH2400024 FH2400024 Diodes Incorporated FH.pdf Description: CRYSTAL 24.0000MHZ 20PF SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Load Capacitance: 20pF
Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm)
Mounting Type: Surface Mount
Type: MHz Crystal
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±20ppm
Frequency Tolerance: ±20ppm
Operating Mode: Fundamental
Supplier Device Package: 4-SMD (2.5x2)
Height - Seated (Max): 0.028" (0.70mm)
ESR (Equivalent Series Resistance): 80 Ohms
Frequency: 24 MHz
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FH2400029 FH2400029 Diodes Incorporated FH.pdf Description: CRYSTAL 24.0000MHZ 7PF SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Load Capacitance: 7pF
Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm)
Mounting Type: Surface Mount
Type: MHz Crystal
Operating Temperature: -20°C ~ 70°C
Frequency Stability: ±10ppm
Frequency Tolerance: ±10ppm
Operating Mode: Fundamental
Supplier Device Package: 4-SMD (2.5x2)
Height - Seated (Max): 0.028" (0.70mm)
ESR (Equivalent Series Resistance): 80 Ohms
Frequency: 24 MHz
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FY2400021 FY2400021 Diodes Incorporated FY.pdf Description: CRYSTAL SURFACE MOUNT
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.197" L x 0.126" W (5.00mm x 3.20mm)
Mounting Type: Surface Mount
Type: MHz Crystal
Operating Mode: Fundamental
Supplier Device Package: 4-SMD (5x3.2)
Height - Seated (Max): 0.043" (1.10mm)
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FW2400023 FW2400023 Diodes Incorporated FW.pdf Description: CRYSTAL 24.0000MHZ 10PF SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Load Capacitance: 10pF
Size / Dimension: 0.079" L x 0.063" W (2.00mm x 1.60mm)
Mounting Type: Surface Mount
Type: MHz Crystal
Operating Temperature: -20°C ~ 70°C
Frequency Stability: ±15ppm
Frequency Tolerance: ±15ppm
Operating Mode: Fundamental
Supplier Device Package: 4-SMD (2x1.6)
Height - Seated (Max): 0.022" (0.55mm)
ESR (Equivalent Series Resistance): 100 Ohms
Frequency: 24 MHz
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DMJ70H1D5SV3 Diodes Incorporated DMJ70H1D5SV3.pdf Description: MOSFET N-CHANNEL 700V 5A TO251
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1A, 10V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-251 (Type TH3)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 9.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 316 pF @ 50 V
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DXTP06080BFGQ-7 DXTP06080BFGQ-7 Diodes Incorporated DXTP06080BFGQ.pdf Description: TRANS PNP 80V 1A POWERDI3
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP
Operating Temperature: -55°C ~ 175°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 280mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 20nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Frequency - Transition: 150MHz
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Grade: Automotive
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.07 W
Qualification: AEC-Q101
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DXTP06080BFGQ-7 DXTP06080BFGQ-7 Diodes Incorporated DXTP06080BFGQ.pdf Description: TRANS PNP 80V 1A POWERDI3
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP
Operating Temperature: -55°C ~ 175°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 280mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 20nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Frequency - Transition: 150MHz
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Grade: Automotive
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.07 W
Qualification: AEC-Q101
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500+0.3 EUR
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ZXCT1009QFTA ZXCT1009QFTA Diodes Incorporated ZXCT1009Q.pdf Description: IC CURRENT MONITOR 1% SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Sensing Method: High-Side
Mounting Type: Surface Mount
Function: Current Monitor
Voltage - Input: 2.5V ~ 20V
Current - Output: 9.98mA
Accuracy: ±1%
Operating Temperature: -40°C ~ 85°C
Supplier Device Package: SOT-23-3
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ZXCT1009QFTA ZXCT1009QFTA Diodes Incorporated ZXCT1009Q.pdf Description: IC CURRENT MONITOR 1% SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Sensing Method: High-Side
Mounting Type: Surface Mount
Function: Current Monitor
Voltage - Input: 2.5V ~ 20V
Current - Output: 9.98mA
Accuracy: ±1%
Operating Temperature: -40°C ~ 85°C
Supplier Device Package: SOT-23-3
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19+0.96 EUR
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MBRB10150CT MBRB10150CT Diodes Incorporated MBRB10150CT.pdf Description: DIODE ARRAY SCHOT 150V 5A TO-263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-263
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 890 mV @ 5 A
Current - Reverse Leakage @ Vr: 50 µA @ 150 V
Qualification: AEC-Q101
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MBRB10150CT MBRB10150CT Diodes Incorporated MBRB10150CT.pdf Description: DIODE ARRAY SCHOT 150V 5A TO-263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-263
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 890 mV @ 5 A
Current - Reverse Leakage @ Vr: 50 µA @ 150 V
Qualification: AEC-Q101
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DMN3032LFDBQ-13 DMN3032LFDBQ-13 Diodes Incorporated DMN3032LFDBQ.pdf Description: MOSFET 2N-CH 30V 6.2A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 15V
Rds On (Max) @ Id, Vgs: 30mOhm @ 5.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10.6nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type B)
Grade: Automotive
Qualification: AEC-Q101
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DMN3032LFDBQ-13 DMN3032LFDBQ-13 Diodes Incorporated DMN3032LFDBQ.pdf Description: MOSFET 2N-CH 30V 6.2A 6UDFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 15V
Rds On (Max) @ Id, Vgs: 30mOhm @ 5.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10.6nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type B)
Grade: Automotive
Qualification: AEC-Q101
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14+1.27 EUR
23+0.78 EUR
100+0.51 EUR
500+0.39 EUR
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DMC3020UDVW-13 DMC3020UDVW.pdf
DMC3020UDVW-13
Hersteller: Diodes Incorporated
Description: MOSFET N/P-CH 30V 20A PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.18W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc), 17A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 383pF @ 15V, 782pF @ 15V
Rds On (Max) @ Id, Vgs: 31mOhm @ 6A, 10V, 42mOhm @ 4.9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8.8nC @ 10V, 13.6nC @ 10V
Vgs(th) (Max) @ Id: 1.85V @ 250µA, 2.1V @ 250µA
Supplier Device Package: PowerDI3333-8 (Type UXD)
Produkt ist nicht verfügbar
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DMC3020UDVW-7 DMC3020UDVW.pdf
DMC3020UDVW-7
Hersteller: Diodes Incorporated
Description: MOSFET N/P-CH 30V 20A PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.18W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc), 17A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 383pF @ 15V, 782pF @ 15V
Rds On (Max) @ Id, Vgs: 31mOhm @ 6A, 10V, 42mOhm @ 4.9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8.8nC @ 10V, 13.6nC @ 10V
Vgs(th) (Max) @ Id: 1.85V @ 250µA, 2.1V @ 250µA
Supplier Device Package: PowerDI3333-8 (Type UXD)
Produkt ist nicht verfügbar
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DMC3020UDVWQ-13 DMC3020UDVWQ.pdf
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 8V~24V POWERDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 1.18W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc), 17A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 383pF @ 15V, 782pF @ 15V
Rds On (Max) @ Id, Vgs: 31mOhm @ 6A, 10V, 42mOhm @ 4.9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8.8nC @ 10V, 13.6nC @ 10V
Vgs(th) (Max) @ Id: 1.85V @ 250µA, 2.1V @ 250µA
Supplier Device Package: PowerDI3333-8 (SWP) (Type UXD)
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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DMC3020UDVWQ-7 DMC3020UDVWQ.pdf
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 8V~24V POWERDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 1.18W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc), 17A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 383pF @ 15V, 782pF @ 15V
Rds On (Max) @ Id, Vgs: 31mOhm @ 6A, 10V, 42mOhm @ 4.9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8.8nC @ 10V, 13.6nC @ 10V
Vgs(th) (Max) @ Id: 1.85V @ 250µA, 2.1V @ 250µA
Supplier Device Package: PowerDI3333-8 (SWP) (Type UXD)
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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1.5KE400A-B ds21503.pdf
1.5KE400A-B
Hersteller: Diodes Incorporated
Description: TVS DIODE 342VWM 548VC DO201
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 4A
Voltage - Reverse Standoff (Typ): 342V
Supplier Device Package: DO-201
Unidirectional Channels: 1
Voltage - Breakdown (Min): 380V
Voltage - Clamping (Max) @ Ipp: 548V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Produkt ist nicht verfügbar
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74LVC1G08FX4-7 74LVC1G08.pdf
74LVC1G08FX4-7
Hersteller: Diodes Incorporated
Description: IC GATE AND 1CH 2-INP DFN1409-6
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 2
Supplier Device Package: X2-DFN1409-6
Input Logic Level - High: 1.7V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.8V
Max Propagation Delay @ V, Max CL: 5.5ns @ 3.3V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 200 µA
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15000+0.15 EUR
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74LVC1G08FX4-7 74LVC1G08.pdf
74LVC1G08FX4-7
Hersteller: Diodes Incorporated
Description: IC GATE AND 1CH 2-INP DFN1409-6
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 2
Supplier Device Package: X2-DFN1409-6
Input Logic Level - High: 1.7V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.8V
Max Propagation Delay @ V, Max CL: 5.5ns @ 3.3V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 200 µA
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46+0.39 EUR
65+0.27 EUR
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500+0.18 EUR
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MBR4060PT description ds23019.pdf
MBR4060PT
Hersteller: Diodes Incorporated
Description: DIODE ARRAY SCHOTT 60V 40A TO-3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 40A
Supplier Device Package: TO-3P
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 20 A
Current - Reverse Leakage @ Vr: 1 mA @ 60 V
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74LVC1G125FS3-7 74LVC1G125.pdf
74LVC1G125FS3-7
Hersteller: Diodes Incorporated
Description: IC BUFF 1.65V X2-DFN0808-4
Packaging: Tape & Reel (TR)
Package / Case: 4-XFDFN Exposed Pad
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: 32mA, 32mA
Supplier Device Package: X2-DFN0808-4
Produkt ist nicht verfügbar
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74LVC1G125FS3-7 74LVC1G125.pdf
74LVC1G125FS3-7
Hersteller: Diodes Incorporated
Description: IC BUFF 1.65V X2-DFN0808-4
Packaging: Cut Tape (CT)
Package / Case: 4-XFDFN Exposed Pad
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: 32mA, 32mA
Supplier Device Package: X2-DFN0808-4
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67+0.26 EUR
98+0.18 EUR
111+0.16 EUR
130+0.14 EUR
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74LVC1G125FX4-7 74LVC1G125.pdf
74LVC1G125FX4-7
Hersteller: Diodes Incorporated
Description: IC BUFF 1.65V X2-DFN1409-6
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: 32mA, 32mA
Supplier Device Package: X2-DFN1409-6
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5000+0.16 EUR
10000+0.15 EUR
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74LVC1G125FX4-7 74LVC1G125.pdf
74LVC1G125FX4-7
Hersteller: Diodes Incorporated
Description: IC BUFF 1.65V X2-DFN1409-6
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: 32mA, 32mA
Supplier Device Package: X2-DFN1409-6
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AnzahlPreis
46+0.39 EUR
65+0.27 EUR
74+0.24 EUR
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250+0.19 EUR
500+0.18 EUR
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FH1200001-W FH.pdf
FH1200001-W
Hersteller: Diodes Incorporated
Description: CRYSTAL CERAMIC SEAM2520 T&R 3K
Packaging: Tape & Reel (TR)
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AnzahlPreis
3000+0.75 EUR
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FH1200001-W FH.pdf
FH1200001-W
Hersteller: Diodes Incorporated
Description: CRYSTAL CERAMIC SEAM2520 T&R 3K
Packaging: Cut Tape (CT)
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AnzahlPreis
15+1.23 EUR
17+1.07 EUR
25+1.01 EUR
50+0.97 EUR
100+0.93 EUR
250+0.88 EUR
500+0.84 EUR
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DMP610DL-13 DMP610DL.pdf
DMP610DL-13
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 41V 60V SOT23 T&R
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 180mA (Ta)
Rds On (Max) @ Id, Vgs: 10Ohm @ 100mA, 5V
Power Dissipation (Max): 310mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 24.6 pF @ 25 V
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10000+0.053 EUR
20000+0.048 EUR
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DMP610DL-13 DMP610DL.pdf
DMP610DL-13
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 41V 60V SOT23 T&R
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 180mA (Ta)
Rds On (Max) @ Id, Vgs: 10Ohm @ 100mA, 5V
Power Dissipation (Max): 310mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 24.6 pF @ 25 V
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53+0.33 EUR
90+0.2 EUR
145+0.12 EUR
500+0.089 EUR
1000+0.078 EUR
2000+0.069 EUR
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PI3WVR13412AZHEX PI3WVR13412A.pdf
PI3WVR13412AZHEX
Hersteller: Diodes Incorporated
Description: DISPLAY SWITCH V-QFN3590-42 T&R
Packaging: Tape & Reel (TR)
Features: HDMI
Package / Case: 42-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 70°C
Applications: Video
-3db Bandwidth: 7GHz
Supplier Device Package: 42-TQFN (9x3.5)
Voltage - Supply, Single (V+): 3V ~ 3.6V
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Number of Channels: 4
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3500+1.04 EUR
7000+1.02 EUR
10500+1.01 EUR
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PI3WVR13412AZHEX PI3WVR13412A.pdf
PI3WVR13412AZHEX
Hersteller: Diodes Incorporated
Description: DISPLAY SWITCH V-QFN3590-42 T&R
Packaging: Cut Tape (CT)
Features: HDMI
Package / Case: 42-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 70°C
Applications: Video
-3db Bandwidth: 7GHz
Supplier Device Package: 42-TQFN (9x3.5)
Voltage - Supply, Single (V+): 3V ~ 3.6V
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Number of Channels: 4
auf Bestellung 17087 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
9+2.15 EUR
12+1.56 EUR
25+1.42 EUR
100+1.26 EUR
250+1.18 EUR
500+1.15 EUR
Mindestbestellmenge: 9 Stücke
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FK5000055Q FK5000055Q.pdf
FK5000055Q
Hersteller: Diodes Incorporated
Description: XTAL OSC XO 50.0000MHZ CMOS SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±25ppm
Voltage - Supply: 3.3V
Ratings: AEC-Q200
Current - Supply (Max): 8mA
Supplier Device Package: 4-VDFN (3.2x2.5)
Height - Seated (Max): 0.045" (1.15mm)
Frequency: 50 MHz
Base Resonator: Crystal
Produkt ist nicht verfügbar
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FK5000055Q FK5000055Q.pdf
FK5000055Q
Hersteller: Diodes Incorporated
Description: XTAL OSC XO 50.0000MHZ CMOS SMD
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±25ppm
Voltage - Supply: 3.3V
Ratings: AEC-Q200
Current - Supply (Max): 8mA
Supplier Device Package: 4-VDFN (3.2x2.5)
Height - Seated (Max): 0.045" (1.15mm)
Frequency: 50 MHz
Base Resonator: Crystal
auf Bestellung 949 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
8+2.38 EUR
10+2.06 EUR
25+1.95 EUR
50+1.87 EUR
100+1.79 EUR
250+1.69 EUR
500+1.62 EUR
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ADTC143ZLP4WQ-7B ADTC143ZLP4WQ.pdf
Hersteller: Diodes Incorporated
Description: PREBIAS TRANSISTOR U-DFN1006-3 T
Packaging: Tape & Reel (TR)
Package / Case: 3-UFDFN
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Supplier Device Package: U-DFN1006-3/SWP (Type UX)
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 255 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
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ADTC114YLP4WQ-7B ADTC114YLP4WQ.pdf
Hersteller: Diodes Incorporated
Description: PREBIAS TRANSISTOR U-DFN1006-3 T
Packaging: Tape & Reel (TR)
Package / Case: 3-UFDFN
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 5V
Supplier Device Package: U-DFN1006-3/SWP (Type UX)
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 255 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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ADTC144ELP4WQ-7B ADTC144ELP4WQ.pdf
Hersteller: Diodes Incorporated
Description: PREBIAS TRANSISTOR U-DFN1003-3 T
Packaging: Tape & Reel (TR)
Package / Case: 3-UFDFN
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V
Supplier Device Package: U-DFN1006-3/SWP (Type UX)
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 255 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
10000+0.063 EUR
20000+0.057 EUR
Mindestbestellmenge: 10000 Stücke
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ADTA144ELP4WQ-7B ADTA144ELP4WQ.pdf
Hersteller: Diodes Incorporated
Description: PREBIAS TRANSISTOR U-DFN1003-3 T
Packaging: Tape & Reel (TR)
Package / Case: 3-UFDFN
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V
Supplier Device Package: U-DFN1006-3/SWP (Type UX)
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 255 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
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ADTC114ELP4WQ-7B ADTC114ELP4WQ.pdf
Hersteller: Diodes Incorporated
Description: PREBIAS TRANSISTOR U-DFN1006-3 T
Packaging: Tape & Reel (TR)
Package / Case: 3-UFDFN
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Supplier Device Package: U-DFN1006-3/SWP (Type UX)
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 255 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
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ADTC143ZLP4WQ-7 ADTC143ZLP4WQ.pdf
Hersteller: Diodes Incorporated
Description: PREBIAS TRANSISTOR U-DFN1006-3 T
Packaging: Tape & Reel (TR)
Package / Case: 3-UFDFN
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Supplier Device Package: U-DFN1006-3/SWP (Type UX)
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 255 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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ADTC144ELP4WQ-7 ADTC144ELP4WQ.pdf
Hersteller: Diodes Incorporated
Description: PREBIAS TRANSISTOR U-DFN1003-3 T
Packaging: Tape & Reel (TR)
Package / Case: 3-UFDFN
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V
Supplier Device Package: U-DFN1006-3/SWP (Type UX)
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 255 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3000+0.076 EUR
6000+0.068 EUR
9000+0.064 EUR
15000+0.06 EUR
Mindestbestellmenge: 3000 Stücke
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ADTA144ELP4WQ-7 ADTA144ELP4WQ.pdf
Hersteller: Diodes Incorporated
Description: PREBIAS TRANSISTOR U-DFN1003-3 T
Packaging: Tape & Reel (TR)
Package / Case: 3-UFDFN
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V
Supplier Device Package: U-DFN1006-3/SWP (Type UX)
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 255 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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ADTC114ELP4WQ-7 ADTC114ELP4WQ.pdf
Hersteller: Diodes Incorporated
Description: PREBIAS TRANSISTOR U-DFN1006-3 T
Packaging: Tape & Reel (TR)
Package / Case: 3-UFDFN
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Supplier Device Package: U-DFN1006-3/SWP (Type UX)
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 255 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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ADTC114YLP4WQ-7 ADTC114YLP4WQ.pdf
Hersteller: Diodes Incorporated
Description: PREBIAS TRANSISTOR U-DFN1006-3 T
Packaging: Tape & Reel (TR)
Package / Case: 3-UFDFN
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 5V
Supplier Device Package: U-DFN1006-3/SWP (Type UX)
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 255 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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DGD44175WU-7 DGD44175.pdf
DGD44175WU-7
Hersteller: Diodes Incorporated
Description: HV GATE DRIVER TSOT26 T&R 3K
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 13.2V ~ 20V
Input Type: Non-Inverting
Supplier Device Package: TSOT-26
Rise / Fall Time (Typ): 10ns, 9ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: IGBT
Logic Voltage - VIL, VIH: 0.8V, 2.4V
Current - Peak Output (Source, Sink): 3.2A, 2.6A
auf Bestellung 24000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3000+0.5 EUR
6000+0.49 EUR
9000+0.48 EUR
21000+0.47 EUR
Mindestbestellmenge: 3000 Stücke
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DGD44175WU-7 DGD44175.pdf
DGD44175WU-7
Hersteller: Diodes Incorporated
Description: HV GATE DRIVER TSOT26 T&R 3K
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 13.2V ~ 20V
Input Type: Non-Inverting
Supplier Device Package: TSOT-26
Rise / Fall Time (Typ): 10ns, 9ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: IGBT
Logic Voltage - VIL, VIH: 0.8V, 2.4V
Current - Peak Output (Source, Sink): 3.2A, 2.6A
auf Bestellung 26965 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
16+1.11 EUR
23+0.78 EUR
25+0.7 EUR
100+0.62 EUR
250+0.58 EUR
500+0.55 EUR
1000+0.53 EUR
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AH1902-Z-7 AH1902.pdf
AH1902-Z-7
Hersteller: Diodes Incorporated
Description: MAGNETIC SWITCH OMNIPOLAR SOT553
Packaging: Tape & Reel (TR)
Package / Case: SOT-553
Output Type: Push-Pull
Polarization: North Pole, South Pole
Mounting Type: Surface Mount
Function: Omnipolar Switch
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.6V ~ 3.6V
Technology: Hall Effect
Sensing Range: ±4.8mT Trip, ±3.8mT Release
Current - Output (Max): 3mA
Current - Supply (Max): 8µA
Supplier Device Package: SOT-553
Test Condition: -40°C ~ 85°C
auf Bestellung 18000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3000+0.5 EUR
6000+0.48 EUR
9000+0.47 EUR
15000+0.46 EUR
Mindestbestellmenge: 3000 Stücke
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AH1902-Z-7 AH1902.pdf
AH1902-Z-7
Hersteller: Diodes Incorporated
Description: MAGNETIC SWITCH OMNIPOLAR SOT553
Packaging: Cut Tape (CT)
Package / Case: SOT-553
Output Type: Push-Pull
Polarization: North Pole, South Pole
Mounting Type: Surface Mount
Function: Omnipolar Switch
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.6V ~ 3.6V
Technology: Hall Effect
Sensing Range: ±4.8mT Trip, ±3.8mT Release
Current - Output (Max): 3mA
Current - Supply (Max): 8µA
Supplier Device Package: SOT-553
Test Condition: -40°C ~ 85°C
auf Bestellung 19197 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
20+0.88 EUR
23+0.77 EUR
25+0.73 EUR
26+0.68 EUR
50+0.65 EUR
100+0.62 EUR
500+0.56 EUR
1000+0.53 EUR
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74LVC1G34Z-7 74LVC1G34.pdf
74LVC1G34Z-7
Hersteller: Diodes Incorporated
Description: IC BUFF NON-INVERT 5.5V SOT-553
Packaging: Tape & Reel (TR)
Package / Case: SOT-553
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: 32mA, 32mA
Supplier Device Package: SOT-553
auf Bestellung 60000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
4000+0.12 EUR
20000+0.11 EUR
Mindestbestellmenge: 4000 Stücke
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74LVC1G34Z-7 74LVC1G34.pdf
74LVC1G34Z-7
Hersteller: Diodes Incorporated
Description: IC BUFF NON-INVERT 5.5V SOT-553
Packaging: Cut Tape (CT)
Package / Case: SOT-553
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: 32mA, 32mA
Supplier Device Package: SOT-553
auf Bestellung 60000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
56+0.32 EUR
83+0.21 EUR
94+0.19 EUR
111+0.16 EUR
250+0.15 EUR
500+0.14 EUR
1000+0.13 EUR
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AH3360-Z-7 AH3360.pdf
AH3360-Z-7
Hersteller: Diodes Incorporated
Description: MAGNETIC SWITCH UNIPOLAR SOT553
Packaging: Tape & Reel (TR)
Package / Case: SOT-553
Output Type: Push-Pull
Polarization: South Pole
Mounting Type: Surface Mount
Function: Unipolar Switch
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.6V ~ 3.6V
Technology: Hall Effect
Sensing Range: 4.6mT Trip, 0.9mT Release
Current - Output (Max): 3mA
Current - Supply (Max): 8µA
Supplier Device Package: SOT-553
Test Condition: -40°C ~ 85°C
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3000+0.44 EUR
6000+0.43 EUR
Mindestbestellmenge: 3000 Stücke
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AH3360-Z-7 AH3360.pdf
AH3360-Z-7
Hersteller: Diodes Incorporated
Description: MAGNETIC SWITCH UNIPOLAR SOT553
Packaging: Cut Tape (CT)
Package / Case: SOT-553
Output Type: Push-Pull
Polarization: South Pole
Mounting Type: Surface Mount
Function: Unipolar Switch
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.6V ~ 3.6V
Technology: Hall Effect
Sensing Range: 4.6mT Trip, 0.9mT Release
Current - Output (Max): 3mA
Current - Supply (Max): 8µA
Supplier Device Package: SOT-553
Test Condition: -40°C ~ 85°C
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
23+0.79 EUR
26+0.69 EUR
27+0.65 EUR
29+0.61 EUR
50+0.58 EUR
100+0.55 EUR
500+0.49 EUR
1000+0.47 EUR
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PI3EQX7502AIZDE+DAX
Hersteller: Diodes Incorporated
Description: IC REDRIVER USB 3.0 2CH 24TQFN
Packaging: Tape & Reel (TR)
Package / Case: 24-VFQFN Exposed Pad
Delay Time: 305ps
Number of Channels: 2
Mounting Type: Surface Mount
Output: CML
Type: Buffer, ReDriver
Input: CML
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 3.6V
Applications: USB 3.0
Current - Supply: 125mA
Data Rate (Max): 5Gbps
Supplier Device Package: 24-TQFN (4x4)
Signal Conditioning: Input Equalization, Output De-Emphasis
auf Bestellung 21000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3500+1.38 EUR
7000+1.35 EUR
10500+1.34 EUR
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PI3EQX7502AIZDE+DAX
Hersteller: Diodes Incorporated
Description: IC REDRIVER USB 3.0 2CH 24TQFN
Packaging: Cut Tape (CT)
Package / Case: 24-VFQFN Exposed Pad
Delay Time: 305ps
Number of Channels: 2
Mounting Type: Surface Mount
Output: CML
Type: Buffer, ReDriver
Input: CML
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 3.6V
Applications: USB 3.0
Current - Supply: 125mA
Data Rate (Max): 5Gbps
Supplier Device Package: 24-TQFN (4x4)
Signal Conditioning: Input Equalization, Output De-Emphasis
auf Bestellung 21000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
7+2.76 EUR
10+2.03 EUR
25+1.85 EUR
100+1.65 EUR
250+1.55 EUR
500+1.49 EUR
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GBJ2010 GBJ20005%7EGBJ2010.pdf
GBJ2010
Hersteller: Diodes Incorporated
Description: BRIDGE RECT 1PHASE 1KV 20A GBJ
Packaging: Tube
Package / Case: 4-SIP, GBJ
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBJ
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 20 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Produkt ist nicht verfügbar
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DMP2100UQ-7 DMP2100UQ.pdf
DMP2100UQ-7
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 25V~30V SOT23 T&R
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta)
Rds On (Max) @ Id, Vgs: 38mOhm @ 3.5A, 10V
Power Dissipation (Max): 800mW (Ta)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: SOT-23-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 9.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 216 pF @ 15 V
Qualification: AEC-Q101
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25+0.7 EUR
41+0.43 EUR
100+0.27 EUR
500+0.2 EUR
1000+0.18 EUR
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BAS40WQ-13-F BAS40WQ.pdf
BAS40WQ-13-F
Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 40V 200MA SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-323
Operating Temperature - Junction: -55°C ~ 125°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Current - Reverse Leakage @ Vr: 200 nA @ 30 V
Qualification: AEC-Q101
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35+0.51 EUR
57+0.31 EUR
100+0.19 EUR
500+0.14 EUR
1000+0.13 EUR
2000+0.11 EUR
5000+0.098 EUR
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BC817-16FHW-7 ds47265.pdf
Hersteller: Diodes Incorporated
Description: GENERAL PURPOSE TRANSISTOR U-DFN
Packaging: Tape & Reel (TR)
Package / Case: 3-PowerUDFN
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: U-DFN1110-3 (SWP) (Type A)
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 460 mW
Produkt ist nicht verfügbar
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BSP75NQ-13
Hersteller: Diodes Incorporated
Description: LOW SIDE INTELLIFET SOT223 T&R 4
Packaging: Cut Tape (CT)
Features: Auto Restart
Package / Case: TO-261-4, TO-261AA
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 385mOhm
Input Type: Non-Inverting
Voltage - Load: 60V
Current - Output (Max): 1.1A
Ratio - Input:Output: 1:1
Supplier Device Package: SOT-223-3
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage, Short Circuit
Grade: Automotive
Qualification: AEC-Q101
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10+1.76 EUR
14+1.28 EUR
25+1.16 EUR
100+1.02 EUR
250+0.96 EUR
500+0.92 EUR
1000+0.9 EUR
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BSP75N-13
Hersteller: Diodes Incorporated
Description: LOW SIDE INTELLIFET SOT223 T&R 4
Packaging: Cut Tape (CT)
Features: Auto Restart
Package / Case: TO-261-4, TO-261AA
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 385mOhm
Input Type: Non-Inverting
Voltage - Load: 60V
Current - Output (Max): 1.1A
Ratio - Input:Output: 1:1
Supplier Device Package: SOT-223-3
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage, Short Circuit
Produkt ist nicht verfügbar
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FH2400020 FH.pdf
FH2400020
Hersteller: Diodes Incorporated
Description: CRYSTAL 24.0000MHZ 20PF SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Load Capacitance: 20pF
Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm)
Mounting Type: Surface Mount
Type: MHz Crystal
Operating Temperature: -20°C ~ 70°C
Frequency Stability: ±20ppm
Frequency Tolerance: ±20ppm
Operating Mode: Fundamental
Supplier Device Package: 4-SMD (2.5x2)
Height - Seated (Max): 0.028" (0.70mm)
ESR (Equivalent Series Resistance): 80 Ohms
Frequency: 24 MHz
Produkt ist nicht verfügbar
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FH2400024 FH.pdf
FH2400024
Hersteller: Diodes Incorporated
Description: CRYSTAL 24.0000MHZ 20PF SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Load Capacitance: 20pF
Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm)
Mounting Type: Surface Mount
Type: MHz Crystal
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±20ppm
Frequency Tolerance: ±20ppm
Operating Mode: Fundamental
Supplier Device Package: 4-SMD (2.5x2)
Height - Seated (Max): 0.028" (0.70mm)
ESR (Equivalent Series Resistance): 80 Ohms
Frequency: 24 MHz
Produkt ist nicht verfügbar
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FH2400029 FH.pdf
FH2400029
Hersteller: Diodes Incorporated
Description: CRYSTAL 24.0000MHZ 7PF SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Load Capacitance: 7pF
Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm)
Mounting Type: Surface Mount
Type: MHz Crystal
Operating Temperature: -20°C ~ 70°C
Frequency Stability: ±10ppm
Frequency Tolerance: ±10ppm
Operating Mode: Fundamental
Supplier Device Package: 4-SMD (2.5x2)
Height - Seated (Max): 0.028" (0.70mm)
ESR (Equivalent Series Resistance): 80 Ohms
Frequency: 24 MHz
Produkt ist nicht verfügbar
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FY2400021 FY.pdf
FY2400021
Hersteller: Diodes Incorporated
Description: CRYSTAL SURFACE MOUNT
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.197" L x 0.126" W (5.00mm x 3.20mm)
Mounting Type: Surface Mount
Type: MHz Crystal
Operating Mode: Fundamental
Supplier Device Package: 4-SMD (5x3.2)
Height - Seated (Max): 0.043" (1.10mm)
Produkt ist nicht verfügbar
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FW2400023 FW.pdf
FW2400023
Hersteller: Diodes Incorporated
Description: CRYSTAL 24.0000MHZ 10PF SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Load Capacitance: 10pF
Size / Dimension: 0.079" L x 0.063" W (2.00mm x 1.60mm)
Mounting Type: Surface Mount
Type: MHz Crystal
Operating Temperature: -20°C ~ 70°C
Frequency Stability: ±15ppm
Frequency Tolerance: ±15ppm
Operating Mode: Fundamental
Supplier Device Package: 4-SMD (2x1.6)
Height - Seated (Max): 0.022" (0.55mm)
ESR (Equivalent Series Resistance): 100 Ohms
Frequency: 24 MHz
Produkt ist nicht verfügbar
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DMJ70H1D5SV3 DMJ70H1D5SV3.pdf
Hersteller: Diodes Incorporated
Description: MOSFET N-CHANNEL 700V 5A TO251
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1A, 10V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-251 (Type TH3)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 9.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 316 pF @ 50 V
Produkt ist nicht verfügbar
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DXTP06080BFGQ-7 DXTP06080BFGQ.pdf
DXTP06080BFGQ-7
Hersteller: Diodes Incorporated
Description: TRANS PNP 80V 1A POWERDI3
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP
Operating Temperature: -55°C ~ 175°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 280mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 20nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Frequency - Transition: 150MHz
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Grade: Automotive
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.07 W
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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DXTP06080BFGQ-7 DXTP06080BFGQ.pdf
DXTP06080BFGQ-7
Hersteller: Diodes Incorporated
Description: TRANS PNP 80V 1A POWERDI3
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP
Operating Temperature: -55°C ~ 175°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 280mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 20nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Frequency - Transition: 150MHz
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Grade: Automotive
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.07 W
Qualification: AEC-Q101
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18+0.99 EUR
29+0.61 EUR
100+0.39 EUR
500+0.3 EUR
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ZXCT1009QFTA ZXCT1009Q.pdf
ZXCT1009QFTA
Hersteller: Diodes Incorporated
Description: IC CURRENT MONITOR 1% SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Sensing Method: High-Side
Mounting Type: Surface Mount
Function: Current Monitor
Voltage - Input: 2.5V ~ 20V
Current - Output: 9.98mA
Accuracy: ±1%
Operating Temperature: -40°C ~ 85°C
Supplier Device Package: SOT-23-3
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3000+0.63 EUR
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ZXCT1009QFTA ZXCT1009Q.pdf
ZXCT1009QFTA
Hersteller: Diodes Incorporated
Description: IC CURRENT MONITOR 1% SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Sensing Method: High-Side
Mounting Type: Surface Mount
Function: Current Monitor
Voltage - Input: 2.5V ~ 20V
Current - Output: 9.98mA
Accuracy: ±1%
Operating Temperature: -40°C ~ 85°C
Supplier Device Package: SOT-23-3
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14+1.34 EUR
19+0.96 EUR
25+0.87 EUR
100+0.76 EUR
250+0.71 EUR
500+0.68 EUR
1000+0.66 EUR
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MBRB10150CT MBRB10150CT.pdf
MBRB10150CT
Hersteller: Diodes Incorporated
Description: DIODE ARRAY SCHOT 150V 5A TO-263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-263
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 890 mV @ 5 A
Current - Reverse Leakage @ Vr: 50 µA @ 150 V
Qualification: AEC-Q101
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11+1.62 EUR
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MBRB10150CT MBRB10150CT.pdf
MBRB10150CT
Hersteller: Diodes Incorporated
Description: DIODE ARRAY SCHOT 150V 5A TO-263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-263
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 890 mV @ 5 A
Current - Reverse Leakage @ Vr: 50 µA @ 150 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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DMN3032LFDBQ-13 DMN3032LFDBQ.pdf
DMN3032LFDBQ-13
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 30V 6.2A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 15V
Rds On (Max) @ Id, Vgs: 30mOhm @ 5.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10.6nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type B)
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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DMN3032LFDBQ-13 DMN3032LFDBQ.pdf
DMN3032LFDBQ-13
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 30V 6.2A 6UDFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 15V
Rds On (Max) @ Id, Vgs: 30mOhm @ 5.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10.6nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type B)
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 9450 Stücke:
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14+1.27 EUR
23+0.78 EUR
100+0.51 EUR
500+0.39 EUR
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5000+0.28 EUR
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