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CDA04N30X1C EPC Space, LLC Description: GANFET 40V 30A .004 OHM 4DAPT
Packaging: Tray
auf Bestellung 88 Stücke:
Lieferzeit 10-14 Tag (e)
1+309.53 EUR
10+277.56 EUR
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CDA10N30X1C EPC Space, LLC Description: GANFET 100V 30A .009 OHM 4DAPT
Packaging: Tray
auf Bestellung 100 Stücke:
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1+311.48 EUR
10+291.73 EUR
25+280.77 EUR
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EPC7001BC EPC7001BC EPC Space, LLC EPC7001BC-datasheet.pdf Description: GAN FET HEMT 40V30A COTS 4FSMD-B
Packaging: Bulk
auf Bestellung 110 Stücke:
Lieferzeit 10-14 Tag (e)
1+513.87 EUR
10+508.56 EUR
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EPC7001BSH EPC Space, LLC Description: GAN FET HEMT 40V 30A 4FSMD-B
Packaging: Bulk
auf Bestellung 50 Stücke:
Lieferzeit 10-14 Tag (e)
1+831.43 EUR
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EPC7002AC EPC Space, LLC Description: GAN FET HEMT 40V 8A COTS 4FSMD-A
Packaging: Bulk
auf Bestellung 150 Stücke:
Lieferzeit 10-14 Tag (e)
1+531.75 EUR
10+528.43 EUR
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EPC7002ASH EPC Space, LLC Description: GAN FET HEMT 40V 8A 4FSMD-A
Packaging: Bulk
auf Bestellung 42 Stücke:
Lieferzeit 10-14 Tag (e)
1+768.51 EUR
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EPC7003AC EPC Space, LLC EPC7003A-datasheet.pdf Description: GAN FET HEMT 100V 5A COTS 4UB
Current - Test: 10 A
Voltage - Rated: 100 V
Configuration: N-Channel
Voltage - Test: 50 V
Input Capacitance (Ciss) (Max) @ Vds: 168 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 5 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): +6V, -4V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: 4-SMD
Vgs(th) (Max) @ Id: 2.5V @ 1.4mA
Rds On (Max) @ Id, Vgs: 42mOhm @ 10A, 5V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
FET Type: N-Channel
Technology: GaN HEMT
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-SMD, No Lead
Packaging: Bulk
auf Bestellung 91 Stücke:
Lieferzeit 10-14 Tag (e)
1+496.06 EUR
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EPC7003ASH EPC Space, LLC EPC7003A-datasheet.pdf Description: GAN FET HEMT 100V 10A.045OHM 4UB
Voltage - Rated: 100 V
Supplier Device Package: 4-SMD
Current - Test: 10 A
Voltage - Test: 50 V
Technology: GaN HEMT
Configuration: N-Channel
Packaging: Bulk
Mounting Type: Surface Mount
Package / Case: 4-SMD, No Lead
auf Bestellung 25 Stücke:
Lieferzeit 10-14 Tag (e)
1+807.39 EUR
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EPC7004BC EPC7004BC EPC Space, LLC EPC7004B-datasheet.pdf Description: GAN FET HEMT100V30A COTS 4FSMD-B
Packaging: Tray
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaN HEMT
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 30A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 7mA
Supplier Device Package: 4-SMD
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 797 pF @ 50 V
Configuration: N-Channel
Voltage - Rated: 100 V
Voltage - Test: 50 V
Current - Test: 30 A
auf Bestellung 104 Stücke:
Lieferzeit 10-14 Tag (e)
1+513.87 EUR
10+508.56 EUR
Im Einkaufswagen  Stück im Wert von  UAH
EPC7007BC EPC7007BC EPC Space, LLC EPC7007B-datasheet.pdf Description: GAN FET HEMT200V18A COTS 4FSMD-B
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaN HEMT
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 18A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 3mA
Supplier Device Package: 4-SMD
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 100 V
Configuration: N-Channel
Voltage - Rated: 200 V
Voltage - Test: 100 V
Current - Test: 18 A
auf Bestellung 96 Stücke:
Lieferzeit 10-14 Tag (e)
1+513.87 EUR
10+508.56 EUR
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EPC7007BSH EPC Space, LLC EPC7007B-datasheet.pdf Description: GAN FET HEMT 200V 18A 4UB
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 5 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): +6V, -4V
Drive Voltage (Max Rds On, Min Rds On): 5V
Supplier Device Package: 4-SMD
Vgs(th) (Max) @ Id: 2.5V @ 3mA
Rds On (Max) @ Id, Vgs: 28mOhm @ 18A, 5V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-SMD, No Lead
Packaging: Bulk
auf Bestellung 50 Stücke:
Lieferzeit 10-14 Tag (e)
1+803.1 EUR
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EPC7011L7C EPC7011L7C EPC Space, LLC Description: IC GATE DRVR
Packaging: Bulk
auf Bestellung 43 Stücke:
Lieferzeit 10-14 Tag (e)
1+1201.55 EUR
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EPC7014UBC EPC7014UBC EPC Space, LLC EPC7014UBC_datasheet.pdf Description: GAN FET HEMT 60V 1A COTS 4UB
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
Rds On (Max) @ Id, Vgs: 580mOhm @ 1A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 140µA
Supplier Device Package: 4-SMD
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +7V, -4V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 22 pF @ 30 V
Packaging: Bulk
auf Bestellung 121 Stücke:
Lieferzeit 10-14 Tag (e)
1+327.8 EUR
10+303.1 EUR
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EPC7014UBSH EPC Space, LLC Description: GAN FET HEMT 60V 1A 4UB
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
Rds On (Max) @ Id, Vgs: 580mOhm @ 1A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 140µA
Supplier Device Package: 4-SMD
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 22 pF @ 30 V
auf Bestellung 25 Stücke:
Lieferzeit 10-14 Tag (e)
1+562.18 EUR
10+538.43 EUR
Im Einkaufswagen  Stück im Wert von  UAH
EPC7018DC EPC Space, LLC EPC7018D-datasheet.pdf Description: MOSFET 2N-CH 100V 70A 4SMD
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 50V
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 70A, 5V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 5mA
Supplier Device Package: 4-SMD
auf Bestellung 34 Stücke:
Lieferzeit 10-14 Tag (e)
1+548.63 EUR
10+542.66 EUR
Im Einkaufswagen  Stück im Wert von  UAH
EPC7018GC EPC7018GC EPC Space, LLC EPC7018G-datasheet.pdf Description: GAN FET HEMT 100V 90A COTS 5UB
Packaging: Bulk
Package / Case: 5-SMD, No Lead
Mounting Type: Surface Mount
Configuration: N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaN HEMT
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 40A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 12mA
Supplier Device Package: 5-SMD
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Voltage - Rated: 100 V
Voltage - Test: 50 V
Current - Test: 40 A
Gate Charge (Qg) (Max) @ Vgs: 11.7 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1240 pF @ 50 V
auf Bestellung 173 Stücke:
Lieferzeit 10-14 Tag (e)
1+502.63 EUR
10+496.05 EUR
Im Einkaufswagen  Stück im Wert von  UAH
EPC7018GSH EPC7018GSH EPC Space, LLC EPC7018GSH-datasheet.pdf Description: GAN FET HEMT 100V 90A 5UB
Current - Test: 40 A
Voltage - Test: 50 V
Voltage - Rated: 100 V
Supplier Device Package: 5-SMD
Technology: GaN HEMT
Configuration: N-Channel
Mounting Type: Surface Mount
Package / Case: 5-SMD, No Lead
Packaging: Bulk
auf Bestellung 36 Stücke:
Lieferzeit 10-14 Tag (e)
1+749.02 EUR
Im Einkaufswagen  Stück im Wert von  UAH
EPC7019DC EPC Space, LLC EPC7019D-datasheet.pdf Description: GAN FET HEMT 40V 80A COTS 4UD
Packaging: Bulk
auf Bestellung 72 Stücke:
Lieferzeit 10-14 Tag (e)
1+570.64 EUR
10+564.43 EUR
Im Einkaufswagen  Stück im Wert von  UAH
EPC7019GC EPC7019GC EPC Space, LLC EPC7019G-datasheet.pdf Description: GAN FET HEMT 40V 95A COTS 5UB
Input Capacitance (Ciss) (Max) @ Vds: 2830 pF @ 20 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): +6V, -4V
Drive Voltage (Max Rds On, Min Rds On): 5V
Part Status: Active
Supplier Device Package: 5-SMD
Vgs(th) (Max) @ Id: 2.5V @ 18mA
Rds On (Max) @ Id, Vgs: 4mOhm @ 50A, 5V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: N-Channel
Technology: GaN HEMT
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 5-SMD, No Lead
Packaging: Bulk
Current - Test: 50 A
Voltage - Test: 20 V
Voltage - Rated: 40 V
Configuration: N-Channel
auf Bestellung 52 Stücke:
Lieferzeit 10-14 Tag (e)
1+502.63 EUR
10+496.05 EUR
Im Einkaufswagen  Stück im Wert von  UAH
EPC7020GC EPC7020GC EPC Space, LLC EPC7020G-datasheet.pdf Description: GAN FET HEMT 200V 80A COTS 5UB
Packaging: Bulk
Package / Case: 5-SMD, No Lead
Mounting Type: Surface Mount
Configuration: N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaN HEMT
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 14.5mOhm @ 30A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 7mA
Supplier Device Package: 5-SMD
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 200 V
Voltage - Rated: 200 V
Voltage - Test: 100 V
Current - Test: 30 A
Input Capacitance (Ciss) (Max) @ Vds: 1313 pF @ 100 V
auf Bestellung 166 Stücke:
Lieferzeit 10-14 Tag (e)
1+504 EUR
10+498.81 EUR
Im Einkaufswagen  Stück im Wert von  UAH
EPC7020GSH EPC Space, LLC EPC7020G-datasheet.pdf Description: GAN FET HEMT 200V 80A 5UB
Packaging: Bulk
Package / Case: 5-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 14.5mOhm @ 30A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 7mA
Supplier Device Package: 5-SMD
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 13.5 nC @ 100 V
Input Capacitance (Ciss) (Max) @ Vds: 1313 pF @ 100 V
auf Bestellung 56 Stücke:
Lieferzeit 10-14 Tag (e)
1+784.29 EUR
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EPC7C001 EPC7C001 EPC Space, LLC EPC7C001-application-guide.pdf Description: EVAL BOARD FOR FBG04N30
Packaging: Box
Function: Gate Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: FBG04N30
Supplied Contents: Board(s)
Secondary Attributes: On-Board Test Points
Embedded: No
Part Status: Active
auf Bestellung 5 Stücke:
Lieferzeit 10-14 Tag (e)
1+3070.08 EUR
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EPC7C002 EPC7C002 EPC Space, LLC Description: BD DEMO FBG10N30/GAM01P-C-PSE
Packaging: Box
Function: Gate Driver
Type: Power Management
Utilized IC / Part: FBG10N30
Supplied Contents: Board(s)
Embedded: No
Part Status: Active
auf Bestellung 5 Stücke:
Lieferzeit 10-14 Tag (e)
1+2882.67 EUR
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EPC7C003 EPC7C003 EPC Space, LLC EPC7C003-application-guide.pdf Description: EVAL BOARD FOR FBG20N18
Contents: Board(s)
Part Status: Active
Embedded: No
Supplied Contents: Board(s)
Utilized IC / Part: FBG20N18
Type: Power Management
Function: Gate Driver
Packaging: Box
Secondary Attributes: On-Board Test Points
auf Bestellung 4 Stücke:
Lieferzeit 10-14 Tag (e)
1+2970.25 EUR
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EPC7C005 EPC7C005 EPC Space, LLC Description: EVAL POL GAM02-PC50/GAM02A-P-C50
Embedded: No
Supplied Contents: Board(s)
Utilized IC / Part: FBS-GAM02
Type: Power Management
Function: Gate Driver
Packaging: Box
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)
1+4035.74 EUR
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FBG04N08AC FBG04N08AC EPC Space, LLC FBG04N08A-datasheet.pdf Description: GAN FET HEMT 40V 8A 4FSMD-A
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaN HEMT
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 8A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 2mA
Supplier Device Package: 4-SMD
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 2.8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 312 pF @ 20 V
Packaging: Bulk
Configuration: N-Channel
Voltage - Rated: 40 V
Voltage - Test: 20 V
Current - Test: 8 A
auf Bestellung 136 Stücke:
Lieferzeit 10-14 Tag (e)
1+455.62 EUR
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FBG04N08ASH FBG04N08ASH EPC Space, LLC FBG04N08A-datasheet.pdf Description: GAN FET HEMT 40V 8A 4FSMD-A
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaN HEMT
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 8A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 2mA
Supplier Device Package: 4-SMD
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 2.8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 312 pF @ 20 V
Configuration: N-Channel
Voltage - Rated: 40 V
Voltage - Test: 20 V
Current - Test: 8 A
Produkt ist nicht verfügbar
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FBG04N30BC FBG04N30BC EPC Space, LLC FBG04N30B-datasheet.pdf Description: GAN FET HEMT 40V30A COTS 4FSMD-B
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 11.4 nC @ 5 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): +6V, -4V
Drive Voltage (Max Rds On, Min Rds On): 5V
Part Status: Active
Supplier Device Package: 4-SMD
Vgs(th) (Max) @ Id: 2.5V @ 9mA
Rds On (Max) @ Id, Vgs: 9mOhm @ 30A, 5V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
Technology: GaN HEMT
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-SMD, No Lead
Packaging: Bulk
Current - Test: 30 A
Voltage - Test: 20 V
Voltage - Rated: 40 V
Configuration: N-Channel
auf Bestellung 141 Stücke:
Lieferzeit 10-14 Tag (e)
1+447.7 EUR
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FBG04N30BSH FBG04N30BSH EPC Space, LLC FBG04N30B-datasheet.pdf Description: GAN FET HEMT 40V 30A 4FSMD-B
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Configuration: N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaN HEMT
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 30A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 9mA
Supplier Device Package: 4-SMD
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 40 V
Voltage - Rated: 40 V
Voltage - Test: 20 V
Current - Test: 30 A
Gate Charge (Qg) (Max) @ Vgs: 11.4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 20 V
auf Bestellung 18 Stücke:
Lieferzeit 10-14 Tag (e)
1+729.79 EUR
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FBG10N05AC FBG10N05AC EPC Space, LLC FBG10N05A-datasheet.pdf Description: GAN FET HEMT 100V5A COTS 4FSMD-A
Input Capacitance (Ciss) (Max) @ Vds: 233 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 2.2 nC @ 5 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): +6V, -4V
Drive Voltage (Max Rds On, Min Rds On): 5V
Part Status: Active
Supplier Device Package: 4-SMD
Vgs(th) (Max) @ Id: 2.5V @ 1.2mA
Rds On (Max) @ Id, Vgs: 44mOhm @ 5A, 5V
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
FET Type: N-Channel
Technology: GaN HEMT
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-SMD, No Lead
Packaging: Bulk
Current - Test: 5 A
Voltage - Test: 50 V
Voltage - Rated: 100 V
Configuration: N-Channel
Current Rating (Amps): 250µA
auf Bestellung 193 Stücke:
Lieferzeit 10-14 Tag (e)
1+473.91 EUR
10+461.83 EUR
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FBG10N05ASH FBG10N05ASH EPC Space, LLC FBG10N05A-datasheet.pdf Description: GAN FET HEMT 100V 5A 4FSMD-A
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Current Rating (Amps): 250µA
Mounting Type: Surface Mount
Configuration: N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaN HEMT
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 5A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 1.2mA
Supplier Device Package: 4-SMD
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Voltage - Rated: 100 V
Voltage - Test: 50 V
Current - Test: 5 A
Gate Charge (Qg) (Max) @ Vgs: 2.2 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 233 pF @ 50 V
auf Bestellung 5 Stücke:
Lieferzeit 10-14 Tag (e)
1+706.06 EUR
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FBG10N30BC FBG10N30BC EPC Space, LLC FBG10N30B-datasheet.pdf Description: GAN FET HEMT100V30A COTS 4FSMD-B
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaN HEMT
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 30A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 5mA
Supplier Device Package: 4-SMD
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 50 V
Packaging: Bulk
Configuration: N-Channel
Voltage - Rated: 100 V
Voltage - Test: 50 V
Current - Test: 30 A
auf Bestellung 123 Stücke:
Lieferzeit 10-14 Tag (e)
1+473.02 EUR
10+462.33 EUR
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FBG10N30BSH FBG10N30BSH EPC Space, LLC FBG10N30B-datasheet.pdf Description: GAN FET HEMT 100V 30A 4FSMD-B
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 5 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): +6V, -4V
Drive Voltage (Max Rds On, Min Rds On): 5V
Part Status: Active
Supplier Device Package: 4-SMD
Vgs(th) (Max) @ Id: 2.5V @ 5mA
Rds On (Max) @ Id, Vgs: 12mOhm @ 30A, 5V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
Technology: GaN HEMT
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-SMD, No Lead
Current - Test: 30 A
Voltage - Test: 50 V
Voltage - Rated: 100 V
Configuration: N-Channel
Packaging: Bulk
auf Bestellung 40 Stücke:
Lieferzeit 10-14 Tag (e)
1+652.41 EUR
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FBG20N04AC EPC Space, LLC FBG20N04A-datasheet.pdf Description: MOSFET 200V 4A 4SMD
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 100V
Rds On (Max) @ Id, Vgs: 130mOhm @ 4A, 5V
Gate Charge (Qg) (Max) @ Vgs: 3nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Supplier Device Package: 4-SMD
Part Status: Active
auf Bestellung 304 Stücke:
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1+463.99 EUR
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FBG20N04ASH FBG20N04ASH EPC Space, LLC FBG20N04A-datasheet.pdf Description: GAN FET HEMT 200V 4A 4FSMD-A
Configuration: N-Channel
Current - Test: 4 A
Voltage - Test: 100 V
Voltage - Rated: 200 V
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 3 nC @ 5 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): +6V, -4V
Drive Voltage (Max Rds On, Min Rds On): 5V
Part Status: Active
Supplier Device Package: 4-SMD
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Rds On (Max) @ Id, Vgs: 130mOhm @ 4A, 5V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
FET Type: N-Channel
Technology: GaN HEMT
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-SMD, No Lead
auf Bestellung 5 Stücke:
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1+688.66 EUR
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FBG20N18BC FBG20N18BC EPC Space, LLC FBG20N18B-datasheet.pdf Description: GAN FET HEMT200V18A COTS 4FSMD-B
Current - Test: 18 A
Voltage - Test: 100 V
Voltage - Rated: 200 V
Configuration: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 5 V
Drain to Source Voltage (Vdss): 200 V
Part Status: Active
Supplier Device Package: 4-SMD
Vgs(th) (Max) @ Id: 2.5V @ 3mA
Rds On (Max) @ Id, Vgs: 26mOhm @ 18A, 5V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
FET Type: N-Channel
Technology: GaN HEMT
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-SMD, No Lead
Vgs (Max): +6V, -4V
Drive Voltage (Max Rds On, Min Rds On): 5V
Packaging: Bulk
auf Bestellung 146 Stücke:
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1+465.54 EUR
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FBG20N18BSH FBG20N18BSH EPC Space, LLC FBG20N18B-datasheet.pdf Description: GAN FET HEMT 200V 18A 4FSMD-B
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaN HEMT
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 18A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 3mA
Supplier Device Package: 4-SMD
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 100 V
Packaging: Bulk
Configuration: N-Channel
Voltage - Rated: 200 V
Voltage - Test: 100 V
Current - Test: 18 A
auf Bestellung 37 Stücke:
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1+686.19 EUR
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FBG30N04CC FBG30N04CC EPC Space, LLC FBG30N04C-datasheet.pdf Description: GAN FET HEMT 300V4A COTS 4FSMD-C
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaN HEMT
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 404mOhm @ 4A, 5V
Vgs(th) (Max) @ Id: 2.8V @ 600µA
Supplier Device Package: 4-SMD
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 2.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 150 V
Packaging: Bulk
Configuration: N-Channel
Voltage - Rated: 300 V
Voltage - Test: 150 V
Current - Test: 4 A
auf Bestellung 27 Stücke:
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1+533.94 EUR
10+492.62 EUR
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FBG30N04CSH FBG30N04CSH EPC Space, LLC FBG30N04C-datasheet.pdf Description: MOSFET 2N-CH 300V 4A 4SMD
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 300V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 450pF @ 150V
Rds On (Max) @ Id, Vgs: 404mOhm @ 4A, 5V
Gate Charge (Qg) (Max) @ Vgs: 2.6nC @ 5V
Vgs(th) (Max) @ Id: 2.8V @ 600µA
Supplier Device Package: 4-SMD
auf Bestellung 1 Stücke:
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1+738.47 EUR
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FBS-GAM02-P-C50 FBS-GAM02-P-C50 EPC Space, LLC FBSGAM02PC50-datasheet.pdf Description: 50V 10A HALF BRIDGE
Voltage: 50 V
Current: 10 A
Configuration: 3 Phase
Type: MOSFET
Mounting Type: Surface Mount
Package / Case: 18-SMD Module
Packaging: Bulk
auf Bestellung 35 Stücke:
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1+1275.03 EUR
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FBS-GAM02P-C-PSE FBS-GAM02P-C-PSE EPC Space, LLC Description: DUAL HIGH & LOW SIDE DRIVER
Packaging: Bulk
Package / Case: 18-SMD Module
Mounting Type: Surface Mount
Configuration: 3 Phase
Part Status: Active
Voltage: 50 V
auf Bestellung 12 Stücke:
Lieferzeit 10-14 Tag (e)
1+1327.02 EUR
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FBS-GAM02P-R-PSE EPC Space, LLC FBSGAM02PRPSE-datasheet.pdf Description: IC GATE DRVR HI/LOW SIDE 18SMD
Packaging: Bulk
Package / Case: 18-SMD Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 130°C (TJ)
Voltage - Supply: 4.5V ~ 5.5V, 5V ~ 50V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 100 V
Supplier Device Package: Module
Rise / Fall Time (Typ): 35ns, 22ns
Channel Type: Independent
Driven Configuration: High-Side and Low-Side
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.9V
auf Bestellung 41 Stücke:
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1+1423.54 EUR
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FBS-GAM04-P-C100 FBS-GAM04-P-C100 EPC Space, LLC FBSGAM04PC100-datasheet.pdf Description: MOSFET IPM 100V 10A 18-SMD MOD
Voltage: 100 V
Current: 10 A
Configuration: 3 Phase
Type: MOSFET
Mounting Type: Surface Mount
Package / Case: 18-SMD Module
Packaging: Bulk
auf Bestellung 12 Stücke:
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1+1211.13 EUR
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FBS-GAM04-P-C50 FBS-GAM04-P-C50 EPC Space, LLC FBSGAM04PC50-datasheet.pdf Description: MOSFET IPM 50V 10A 18-SMD MOD
Voltage: 50 V
Current: 10 A
Configuration: 3 Phase
Type: MOSFET
Mounting Type: Surface Mount
Package / Case: 18-SMD Module
Packaging: Bulk
auf Bestellung 5 Stücke:
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1+1239.14 EUR
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CDA04N30X1C
Hersteller: EPC Space, LLC
Description: GANFET 40V 30A .004 OHM 4DAPT
Packaging: Tray
auf Bestellung 88 Stücke:
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1+309.53 EUR
10+277.56 EUR
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CDA10N30X1C
Hersteller: EPC Space, LLC
Description: GANFET 100V 30A .009 OHM 4DAPT
Packaging: Tray
auf Bestellung 100 Stücke:
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1+311.48 EUR
10+291.73 EUR
25+280.77 EUR
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EPC7001BC EPC7001BC-datasheet.pdf
EPC7001BC
Hersteller: EPC Space, LLC
Description: GAN FET HEMT 40V30A COTS 4FSMD-B
Packaging: Bulk
auf Bestellung 110 Stücke:
Lieferzeit 10-14 Tag (e)
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1+513.87 EUR
10+508.56 EUR
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EPC7001BSH
Hersteller: EPC Space, LLC
Description: GAN FET HEMT 40V 30A 4FSMD-B
Packaging: Bulk
auf Bestellung 50 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+831.43 EUR
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EPC7002AC
Hersteller: EPC Space, LLC
Description: GAN FET HEMT 40V 8A COTS 4FSMD-A
Packaging: Bulk
auf Bestellung 150 Stücke:
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1+531.75 EUR
10+528.43 EUR
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EPC7002ASH
Hersteller: EPC Space, LLC
Description: GAN FET HEMT 40V 8A 4FSMD-A
Packaging: Bulk
auf Bestellung 42 Stücke:
Lieferzeit 10-14 Tag (e)
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1+768.51 EUR
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EPC7003AC EPC7003A-datasheet.pdf
Hersteller: EPC Space, LLC
Description: GAN FET HEMT 100V 5A COTS 4UB
Current - Test: 10 A
Voltage - Rated: 100 V
Configuration: N-Channel
Voltage - Test: 50 V
Input Capacitance (Ciss) (Max) @ Vds: 168 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 5 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): +6V, -4V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: 4-SMD
Vgs(th) (Max) @ Id: 2.5V @ 1.4mA
Rds On (Max) @ Id, Vgs: 42mOhm @ 10A, 5V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
FET Type: N-Channel
Technology: GaN HEMT
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-SMD, No Lead
Packaging: Bulk
auf Bestellung 91 Stücke:
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1+496.06 EUR
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EPC7003ASH EPC7003A-datasheet.pdf
Hersteller: EPC Space, LLC
Description: GAN FET HEMT 100V 10A.045OHM 4UB
Voltage - Rated: 100 V
Supplier Device Package: 4-SMD
Current - Test: 10 A
Voltage - Test: 50 V
Technology: GaN HEMT
Configuration: N-Channel
Packaging: Bulk
Mounting Type: Surface Mount
Package / Case: 4-SMD, No Lead
auf Bestellung 25 Stücke:
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1+807.39 EUR
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EPC7004BC EPC7004B-datasheet.pdf
EPC7004BC
Hersteller: EPC Space, LLC
Description: GAN FET HEMT100V30A COTS 4FSMD-B
Packaging: Tray
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaN HEMT
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 30A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 7mA
Supplier Device Package: 4-SMD
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 797 pF @ 50 V
Configuration: N-Channel
Voltage - Rated: 100 V
Voltage - Test: 50 V
Current - Test: 30 A
auf Bestellung 104 Stücke:
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1+513.87 EUR
10+508.56 EUR
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EPC7007BC EPC7007B-datasheet.pdf
EPC7007BC
Hersteller: EPC Space, LLC
Description: GAN FET HEMT200V18A COTS 4FSMD-B
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaN HEMT
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 18A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 3mA
Supplier Device Package: 4-SMD
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 100 V
Configuration: N-Channel
Voltage - Rated: 200 V
Voltage - Test: 100 V
Current - Test: 18 A
auf Bestellung 96 Stücke:
Lieferzeit 10-14 Tag (e)
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1+513.87 EUR
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EPC7007BSH EPC7007B-datasheet.pdf
Hersteller: EPC Space, LLC
Description: GAN FET HEMT 200V 18A 4UB
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 5 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): +6V, -4V
Drive Voltage (Max Rds On, Min Rds On): 5V
Supplier Device Package: 4-SMD
Vgs(th) (Max) @ Id: 2.5V @ 3mA
Rds On (Max) @ Id, Vgs: 28mOhm @ 18A, 5V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-SMD, No Lead
Packaging: Bulk
auf Bestellung 50 Stücke:
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AnzahlPrivatkunde
1+803.1 EUR
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EPC7011L7C
EPC7011L7C
Hersteller: EPC Space, LLC
Description: IC GATE DRVR
Packaging: Bulk
auf Bestellung 43 Stücke:
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1+1201.55 EUR
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EPC7014UBC EPC7014UBC_datasheet.pdf
EPC7014UBC
Hersteller: EPC Space, LLC
Description: GAN FET HEMT 60V 1A COTS 4UB
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
Rds On (Max) @ Id, Vgs: 580mOhm @ 1A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 140µA
Supplier Device Package: 4-SMD
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +7V, -4V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 22 pF @ 30 V
Packaging: Bulk
auf Bestellung 121 Stücke:
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1+327.8 EUR
10+303.1 EUR
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EPC7014UBSH
Hersteller: EPC Space, LLC
Description: GAN FET HEMT 60V 1A 4UB
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
Rds On (Max) @ Id, Vgs: 580mOhm @ 1A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 140µA
Supplier Device Package: 4-SMD
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 22 pF @ 30 V
auf Bestellung 25 Stücke:
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1+562.18 EUR
10+538.43 EUR
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EPC7018DC EPC7018D-datasheet.pdf
Hersteller: EPC Space, LLC
Description: MOSFET 2N-CH 100V 70A 4SMD
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 50V
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 70A, 5V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 5mA
Supplier Device Package: 4-SMD
auf Bestellung 34 Stücke:
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1+548.63 EUR
10+542.66 EUR
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EPC7018GC EPC7018G-datasheet.pdf
EPC7018GC
Hersteller: EPC Space, LLC
Description: GAN FET HEMT 100V 90A COTS 5UB
Packaging: Bulk
Package / Case: 5-SMD, No Lead
Mounting Type: Surface Mount
Configuration: N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaN HEMT
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 40A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 12mA
Supplier Device Package: 5-SMD
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Voltage - Rated: 100 V
Voltage - Test: 50 V
Current - Test: 40 A
Gate Charge (Qg) (Max) @ Vgs: 11.7 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1240 pF @ 50 V
auf Bestellung 173 Stücke:
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1+502.63 EUR
10+496.05 EUR
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EPC7018GSH EPC7018GSH-datasheet.pdf
EPC7018GSH
Hersteller: EPC Space, LLC
Description: GAN FET HEMT 100V 90A 5UB
Current - Test: 40 A
Voltage - Test: 50 V
Voltage - Rated: 100 V
Supplier Device Package: 5-SMD
Technology: GaN HEMT
Configuration: N-Channel
Mounting Type: Surface Mount
Package / Case: 5-SMD, No Lead
Packaging: Bulk
auf Bestellung 36 Stücke:
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AnzahlPrivatkunde
1+749.02 EUR
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EPC7019DC EPC7019D-datasheet.pdf
Hersteller: EPC Space, LLC
Description: GAN FET HEMT 40V 80A COTS 4UD
Packaging: Bulk
auf Bestellung 72 Stücke:
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1+570.64 EUR
10+564.43 EUR
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EPC7019GC EPC7019G-datasheet.pdf
EPC7019GC
Hersteller: EPC Space, LLC
Description: GAN FET HEMT 40V 95A COTS 5UB
Input Capacitance (Ciss) (Max) @ Vds: 2830 pF @ 20 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): +6V, -4V
Drive Voltage (Max Rds On, Min Rds On): 5V
Part Status: Active
Supplier Device Package: 5-SMD
Vgs(th) (Max) @ Id: 2.5V @ 18mA
Rds On (Max) @ Id, Vgs: 4mOhm @ 50A, 5V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: N-Channel
Technology: GaN HEMT
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 5-SMD, No Lead
Packaging: Bulk
Current - Test: 50 A
Voltage - Test: 20 V
Voltage - Rated: 40 V
Configuration: N-Channel
auf Bestellung 52 Stücke:
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1+502.63 EUR
10+496.05 EUR
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EPC7020GC EPC7020G-datasheet.pdf
EPC7020GC
Hersteller: EPC Space, LLC
Description: GAN FET HEMT 200V 80A COTS 5UB
Packaging: Bulk
Package / Case: 5-SMD, No Lead
Mounting Type: Surface Mount
Configuration: N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaN HEMT
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 14.5mOhm @ 30A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 7mA
Supplier Device Package: 5-SMD
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 200 V
Voltage - Rated: 200 V
Voltage - Test: 100 V
Current - Test: 30 A
Input Capacitance (Ciss) (Max) @ Vds: 1313 pF @ 100 V
auf Bestellung 166 Stücke:
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10+498.81 EUR
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EPC7020GSH EPC7020G-datasheet.pdf
Hersteller: EPC Space, LLC
Description: GAN FET HEMT 200V 80A 5UB
Packaging: Bulk
Package / Case: 5-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 14.5mOhm @ 30A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 7mA
Supplier Device Package: 5-SMD
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 13.5 nC @ 100 V
Input Capacitance (Ciss) (Max) @ Vds: 1313 pF @ 100 V
auf Bestellung 56 Stücke:
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1+784.29 EUR
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EPC7C001 EPC7C001-application-guide.pdf
EPC7C001
Hersteller: EPC Space, LLC
Description: EVAL BOARD FOR FBG04N30
Packaging: Box
Function: Gate Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: FBG04N30
Supplied Contents: Board(s)
Secondary Attributes: On-Board Test Points
Embedded: No
Part Status: Active
auf Bestellung 5 Stücke:
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EPC7C002
EPC7C002
Hersteller: EPC Space, LLC
Description: BD DEMO FBG10N30/GAM01P-C-PSE
Packaging: Box
Function: Gate Driver
Type: Power Management
Utilized IC / Part: FBG10N30
Supplied Contents: Board(s)
Embedded: No
Part Status: Active
auf Bestellung 5 Stücke:
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1+2882.67 EUR
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EPC7C003 EPC7C003-application-guide.pdf
EPC7C003
Hersteller: EPC Space, LLC
Description: EVAL BOARD FOR FBG20N18
Contents: Board(s)
Part Status: Active
Embedded: No
Supplied Contents: Board(s)
Utilized IC / Part: FBG20N18
Type: Power Management
Function: Gate Driver
Packaging: Box
Secondary Attributes: On-Board Test Points
auf Bestellung 4 Stücke:
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1+2970.25 EUR
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EPC7C005
EPC7C005
Hersteller: EPC Space, LLC
Description: EVAL POL GAM02-PC50/GAM02A-P-C50
Embedded: No
Supplied Contents: Board(s)
Utilized IC / Part: FBS-GAM02
Type: Power Management
Function: Gate Driver
Packaging: Box
auf Bestellung 2 Stücke:
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1+4035.74 EUR
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FBG04N08AC FBG04N08A-datasheet.pdf
FBG04N08AC
Hersteller: EPC Space, LLC
Description: GAN FET HEMT 40V 8A 4FSMD-A
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaN HEMT
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 8A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 2mA
Supplier Device Package: 4-SMD
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 2.8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 312 pF @ 20 V
Packaging: Bulk
Configuration: N-Channel
Voltage - Rated: 40 V
Voltage - Test: 20 V
Current - Test: 8 A
auf Bestellung 136 Stücke:
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1+455.62 EUR
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FBG04N08ASH FBG04N08A-datasheet.pdf
FBG04N08ASH
Hersteller: EPC Space, LLC
Description: GAN FET HEMT 40V 8A 4FSMD-A
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaN HEMT
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 8A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 2mA
Supplier Device Package: 4-SMD
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 2.8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 312 pF @ 20 V
Configuration: N-Channel
Voltage - Rated: 40 V
Voltage - Test: 20 V
Current - Test: 8 A
Produkt ist nicht verfügbar
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FBG04N30BC FBG04N30B-datasheet.pdf
FBG04N30BC
Hersteller: EPC Space, LLC
Description: GAN FET HEMT 40V30A COTS 4FSMD-B
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 11.4 nC @ 5 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): +6V, -4V
Drive Voltage (Max Rds On, Min Rds On): 5V
Part Status: Active
Supplier Device Package: 4-SMD
Vgs(th) (Max) @ Id: 2.5V @ 9mA
Rds On (Max) @ Id, Vgs: 9mOhm @ 30A, 5V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
Technology: GaN HEMT
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-SMD, No Lead
Packaging: Bulk
Current - Test: 30 A
Voltage - Test: 20 V
Voltage - Rated: 40 V
Configuration: N-Channel
auf Bestellung 141 Stücke:
Lieferzeit 10-14 Tag (e)
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1+447.7 EUR
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FBG04N30BSH FBG04N30B-datasheet.pdf
FBG04N30BSH
Hersteller: EPC Space, LLC
Description: GAN FET HEMT 40V 30A 4FSMD-B
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Configuration: N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaN HEMT
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 30A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 9mA
Supplier Device Package: 4-SMD
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 40 V
Voltage - Rated: 40 V
Voltage - Test: 20 V
Current - Test: 30 A
Gate Charge (Qg) (Max) @ Vgs: 11.4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 20 V
auf Bestellung 18 Stücke:
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1+729.79 EUR
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FBG10N05AC FBG10N05A-datasheet.pdf
FBG10N05AC
Hersteller: EPC Space, LLC
Description: GAN FET HEMT 100V5A COTS 4FSMD-A
Input Capacitance (Ciss) (Max) @ Vds: 233 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 2.2 nC @ 5 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): +6V, -4V
Drive Voltage (Max Rds On, Min Rds On): 5V
Part Status: Active
Supplier Device Package: 4-SMD
Vgs(th) (Max) @ Id: 2.5V @ 1.2mA
Rds On (Max) @ Id, Vgs: 44mOhm @ 5A, 5V
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
FET Type: N-Channel
Technology: GaN HEMT
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-SMD, No Lead
Packaging: Bulk
Current - Test: 5 A
Voltage - Test: 50 V
Voltage - Rated: 100 V
Configuration: N-Channel
Current Rating (Amps): 250µA
auf Bestellung 193 Stücke:
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1+473.91 EUR
10+461.83 EUR
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FBG10N05ASH FBG10N05A-datasheet.pdf
FBG10N05ASH
Hersteller: EPC Space, LLC
Description: GAN FET HEMT 100V 5A 4FSMD-A
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Current Rating (Amps): 250µA
Mounting Type: Surface Mount
Configuration: N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaN HEMT
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 5A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 1.2mA
Supplier Device Package: 4-SMD
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Voltage - Rated: 100 V
Voltage - Test: 50 V
Current - Test: 5 A
Gate Charge (Qg) (Max) @ Vgs: 2.2 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 233 pF @ 50 V
auf Bestellung 5 Stücke:
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1+706.06 EUR
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FBG10N30BC FBG10N30B-datasheet.pdf
FBG10N30BC
Hersteller: EPC Space, LLC
Description: GAN FET HEMT100V30A COTS 4FSMD-B
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaN HEMT
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 30A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 5mA
Supplier Device Package: 4-SMD
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 50 V
Packaging: Bulk
Configuration: N-Channel
Voltage - Rated: 100 V
Voltage - Test: 50 V
Current - Test: 30 A
auf Bestellung 123 Stücke:
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1+473.02 EUR
10+462.33 EUR
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FBG10N30BSH FBG10N30B-datasheet.pdf
FBG10N30BSH
Hersteller: EPC Space, LLC
Description: GAN FET HEMT 100V 30A 4FSMD-B
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 5 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): +6V, -4V
Drive Voltage (Max Rds On, Min Rds On): 5V
Part Status: Active
Supplier Device Package: 4-SMD
Vgs(th) (Max) @ Id: 2.5V @ 5mA
Rds On (Max) @ Id, Vgs: 12mOhm @ 30A, 5V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
Technology: GaN HEMT
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-SMD, No Lead
Current - Test: 30 A
Voltage - Test: 50 V
Voltage - Rated: 100 V
Configuration: N-Channel
Packaging: Bulk
auf Bestellung 40 Stücke:
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1+652.41 EUR
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FBG20N04AC FBG20N04A-datasheet.pdf
Hersteller: EPC Space, LLC
Description: MOSFET 200V 4A 4SMD
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 100V
Rds On (Max) @ Id, Vgs: 130mOhm @ 4A, 5V
Gate Charge (Qg) (Max) @ Vgs: 3nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Supplier Device Package: 4-SMD
Part Status: Active
auf Bestellung 304 Stücke:
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1+463.99 EUR
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FBG20N04ASH FBG20N04A-datasheet.pdf
FBG20N04ASH
Hersteller: EPC Space, LLC
Description: GAN FET HEMT 200V 4A 4FSMD-A
Configuration: N-Channel
Current - Test: 4 A
Voltage - Test: 100 V
Voltage - Rated: 200 V
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 3 nC @ 5 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): +6V, -4V
Drive Voltage (Max Rds On, Min Rds On): 5V
Part Status: Active
Supplier Device Package: 4-SMD
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Rds On (Max) @ Id, Vgs: 130mOhm @ 4A, 5V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
FET Type: N-Channel
Technology: GaN HEMT
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-SMD, No Lead
auf Bestellung 5 Stücke:
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1+688.66 EUR
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FBG20N18BC FBG20N18B-datasheet.pdf
FBG20N18BC
Hersteller: EPC Space, LLC
Description: GAN FET HEMT200V18A COTS 4FSMD-B
Current - Test: 18 A
Voltage - Test: 100 V
Voltage - Rated: 200 V
Configuration: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 5 V
Drain to Source Voltage (Vdss): 200 V
Part Status: Active
Supplier Device Package: 4-SMD
Vgs(th) (Max) @ Id: 2.5V @ 3mA
Rds On (Max) @ Id, Vgs: 26mOhm @ 18A, 5V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
FET Type: N-Channel
Technology: GaN HEMT
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-SMD, No Lead
Vgs (Max): +6V, -4V
Drive Voltage (Max Rds On, Min Rds On): 5V
Packaging: Bulk
auf Bestellung 146 Stücke:
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FBG20N18BSH FBG20N18B-datasheet.pdf
FBG20N18BSH
Hersteller: EPC Space, LLC
Description: GAN FET HEMT 200V 18A 4FSMD-B
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaN HEMT
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 18A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 3mA
Supplier Device Package: 4-SMD
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 100 V
Packaging: Bulk
Configuration: N-Channel
Voltage - Rated: 200 V
Voltage - Test: 100 V
Current - Test: 18 A
auf Bestellung 37 Stücke:
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FBG30N04CC FBG30N04C-datasheet.pdf
FBG30N04CC
Hersteller: EPC Space, LLC
Description: GAN FET HEMT 300V4A COTS 4FSMD-C
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaN HEMT
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 404mOhm @ 4A, 5V
Vgs(th) (Max) @ Id: 2.8V @ 600µA
Supplier Device Package: 4-SMD
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 2.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 150 V
Packaging: Bulk
Configuration: N-Channel
Voltage - Rated: 300 V
Voltage - Test: 150 V
Current - Test: 4 A
auf Bestellung 27 Stücke:
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1+533.94 EUR
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FBG30N04CSH FBG30N04C-datasheet.pdf
FBG30N04CSH
Hersteller: EPC Space, LLC
Description: MOSFET 2N-CH 300V 4A 4SMD
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 300V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 450pF @ 150V
Rds On (Max) @ Id, Vgs: 404mOhm @ 4A, 5V
Gate Charge (Qg) (Max) @ Vgs: 2.6nC @ 5V
Vgs(th) (Max) @ Id: 2.8V @ 600µA
Supplier Device Package: 4-SMD
auf Bestellung 1 Stücke:
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1+738.47 EUR
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FBS-GAM02-P-C50 FBSGAM02PC50-datasheet.pdf
FBS-GAM02-P-C50
Hersteller: EPC Space, LLC
Description: 50V 10A HALF BRIDGE
Voltage: 50 V
Current: 10 A
Configuration: 3 Phase
Type: MOSFET
Mounting Type: Surface Mount
Package / Case: 18-SMD Module
Packaging: Bulk
auf Bestellung 35 Stücke:
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1+1275.03 EUR
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FBS-GAM02P-C-PSE
FBS-GAM02P-C-PSE
Hersteller: EPC Space, LLC
Description: DUAL HIGH & LOW SIDE DRIVER
Packaging: Bulk
Package / Case: 18-SMD Module
Mounting Type: Surface Mount
Configuration: 3 Phase
Part Status: Active
Voltage: 50 V
auf Bestellung 12 Stücke:
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1+1327.02 EUR
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FBS-GAM02P-R-PSE FBSGAM02PRPSE-datasheet.pdf
Hersteller: EPC Space, LLC
Description: IC GATE DRVR HI/LOW SIDE 18SMD
Packaging: Bulk
Package / Case: 18-SMD Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 130°C (TJ)
Voltage - Supply: 4.5V ~ 5.5V, 5V ~ 50V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 100 V
Supplier Device Package: Module
Rise / Fall Time (Typ): 35ns, 22ns
Channel Type: Independent
Driven Configuration: High-Side and Low-Side
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.9V
auf Bestellung 41 Stücke:
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1+1423.54 EUR
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FBS-GAM04-P-C100 FBSGAM04PC100-datasheet.pdf
FBS-GAM04-P-C100
Hersteller: EPC Space, LLC
Description: MOSFET IPM 100V 10A 18-SMD MOD
Voltage: 100 V
Current: 10 A
Configuration: 3 Phase
Type: MOSFET
Mounting Type: Surface Mount
Package / Case: 18-SMD Module
Packaging: Bulk
auf Bestellung 12 Stücke:
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1+1211.13 EUR
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FBS-GAM04-P-C50 FBSGAM04PC50-datasheet.pdf
FBS-GAM04-P-C50
Hersteller: EPC Space, LLC
Description: MOSFET IPM 50V 10A 18-SMD MOD
Voltage: 50 V
Current: 10 A
Configuration: 3 Phase
Type: MOSFET
Mounting Type: Surface Mount
Package / Case: 18-SMD Module
Packaging: Bulk
auf Bestellung 5 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+1239.14 EUR
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