Produkte > INFINEON TECHNOLOGIES CANADA INC. > Alle Produkte des Herstellers INFINEON TECHNOLOGIES CANADA INC. (76) > Seite 2 nach 2

Wählen Sie Seite:   [  << Vorherige Seite ]  1 2
Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
GS66504B-MR GS66504B-MR Infineon Technologies Canada Inc. Description: GS66504B-MR
Packaging: Cut Tape (CT)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 4.5A, 6V
Vgs(th) (Max) @ Id: 1.3V @ 3.5mA
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 3 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 130 pF @ 400 V
auf Bestellung 368 Stücke:
Lieferzeit 10-14 Tag (e)
1+25.89 EUR
10+18.26 EUR
100+15.10 EUR
Im Einkaufswagen  Stück im Wert von  UAH
GS66504B-TR GS66504B-TR Infineon Technologies Canada Inc. Description: GS66504B-TR
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 4.5A, 6V
Vgs(th) (Max) @ Id: 1.3V @ 3.5mA
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 3 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 130 pF @ 400 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GS66506T-MR GS66506T-MR Infineon Technologies Canada Inc. Description: GS66506T-MR
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22.5A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 6.7A, 6V
Vgs(th) (Max) @ Id: 1.3V @ 5mA
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 4.4 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 195 pF @ 400 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GS66506T-MR GS66506T-MR Infineon Technologies Canada Inc. Description: GS66506T-MR
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22.5A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 6.7A, 6V
Vgs(th) (Max) @ Id: 1.3V @ 5mA
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 4.4 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 195 pF @ 400 V
auf Bestellung 176 Stücke:
Lieferzeit 10-14 Tag (e)
1+29.09 EUR
10+21.98 EUR
100+19.50 EUR
Im Einkaufswagen  Stück im Wert von  UAH
GS66506T-TR GS66506T-TR Infineon Technologies Canada Inc. Description: GS66506T-TR
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22.5A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 6.7A, 6V
Vgs(th) (Max) @ Id: 1.3V @ 5mA
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 4.4 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 195 pF @ 400 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GS66508B-MR GS66508B-MR Infineon Technologies Canada Inc. Description: GS66508B-MR
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 63mOhm @ 9A, 6V
Vgs(th) (Max) @ Id: 2.6V @ 7mA
Supplier Device Package: Die
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 6.1 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 242 pF @ 400 V
auf Bestellung 250 Stücke:
Lieferzeit 10-14 Tag (e)
250+22.46 EUR
Mindestbestellmenge: 250
Im Einkaufswagen  Stück im Wert von  UAH
GS66508B-MR GS66508B-MR Infineon Technologies Canada Inc. Description: GS66508B-MR
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 63mOhm @ 9A, 6V
Vgs(th) (Max) @ Id: 2.6V @ 7mA
Supplier Device Package: Die
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 6.1 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 242 pF @ 400 V
auf Bestellung 352 Stücke:
Lieferzeit 10-14 Tag (e)
1+35.83 EUR
10+26.34 EUR
100+23.39 EUR
Im Einkaufswagen  Stück im Wert von  UAH
GS66508B-TR GS66508B-TR Infineon Technologies Canada Inc. Description: GS66508B-TR
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 63mOhm @ 9A, 6V
Vgs(th) (Max) @ Id: 2.6V @ 7mA
Supplier Device Package: Die
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 6.1 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 242 pF @ 400 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GS66508T-MR GS66508T-MR Infineon Technologies Canada Inc. Description: GS66508T-MR
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 63mOhm @ 9A, 6V
Vgs(th) (Max) @ Id: 2.6V @ 7mA
Supplier Device Package: Die
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 400 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GS66508T-TR GS66508T-TR Infineon Technologies Canada Inc. Description: GS66508T-TR
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 63mOhm @ 9A, 6V
Vgs(th) (Max) @ Id: 2.6V @ 7mA
Supplier Device Package: Die
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 400 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GS66516B-MR GS66516B-MR Infineon Technologies Canada Inc. Description: GS66516B-MR
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 18A, 6V
Vgs(th) (Max) @ Id: 1.3V @ 14mA
Supplier Device Package: Die
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 12.1 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 400 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GS66516B-MR GS66516B-MR Infineon Technologies Canada Inc. Description: GS66516B-MR
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 18A, 6V
Vgs(th) (Max) @ Id: 1.3V @ 14mA
Supplier Device Package: Die
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 12.1 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 400 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GS66516B-TR GS66516B-TR Infineon Technologies Canada Inc. Description: GS66516B-TR
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 18A, 6V
Vgs(th) (Max) @ Id: 1.3V @ 14mA
Supplier Device Package: Die
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 12.1 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 400 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GS66516T-MR GS66516T-MR Infineon Technologies Canada Inc. Description: GS66516T-MR
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 18A, 6V
Vgs(th) (Max) @ Id: 1.3V @ 14mA
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 12.1 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 400 V
auf Bestellung 1350 Stücke:
Lieferzeit 10-14 Tag (e)
250+49.92 EUR
Mindestbestellmenge: 250
Im Einkaufswagen  Stück im Wert von  UAH
GS66516T-MR GS66516T-MR Infineon Technologies Canada Inc. Description: GS66516T-MR
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 18A, 6V
Vgs(th) (Max) @ Id: 1.3V @ 14mA
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 12.1 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 400 V
auf Bestellung 1465 Stücke:
Lieferzeit 10-14 Tag (e)
1+63.31 EUR
10+48.49 EUR
100+42.22 EUR
Im Einkaufswagen  Stück im Wert von  UAH
GS66516T-TR GS66516T-TR Infineon Technologies Canada Inc. Description: GS66516T-TR
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 18A, 6V
Vgs(th) (Max) @ Id: 1.3V @ 14mA
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 12.1 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 400 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GS66504B-MR
GS66504B-MR
Hersteller: Infineon Technologies Canada Inc.
Description: GS66504B-MR
Packaging: Cut Tape (CT)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 4.5A, 6V
Vgs(th) (Max) @ Id: 1.3V @ 3.5mA
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 3 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 130 pF @ 400 V
auf Bestellung 368 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+25.89 EUR
10+18.26 EUR
100+15.10 EUR
Im Einkaufswagen  Stück im Wert von  UAH
GS66504B-TR
GS66504B-TR
Hersteller: Infineon Technologies Canada Inc.
Description: GS66504B-TR
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 4.5A, 6V
Vgs(th) (Max) @ Id: 1.3V @ 3.5mA
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 3 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 130 pF @ 400 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GS66506T-MR
GS66506T-MR
Hersteller: Infineon Technologies Canada Inc.
Description: GS66506T-MR
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22.5A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 6.7A, 6V
Vgs(th) (Max) @ Id: 1.3V @ 5mA
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 4.4 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 195 pF @ 400 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GS66506T-MR
GS66506T-MR
Hersteller: Infineon Technologies Canada Inc.
Description: GS66506T-MR
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22.5A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 6.7A, 6V
Vgs(th) (Max) @ Id: 1.3V @ 5mA
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 4.4 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 195 pF @ 400 V
auf Bestellung 176 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+29.09 EUR
10+21.98 EUR
100+19.50 EUR
Im Einkaufswagen  Stück im Wert von  UAH
GS66506T-TR
GS66506T-TR
Hersteller: Infineon Technologies Canada Inc.
Description: GS66506T-TR
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22.5A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 6.7A, 6V
Vgs(th) (Max) @ Id: 1.3V @ 5mA
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 4.4 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 195 pF @ 400 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GS66508B-MR
GS66508B-MR
Hersteller: Infineon Technologies Canada Inc.
Description: GS66508B-MR
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 63mOhm @ 9A, 6V
Vgs(th) (Max) @ Id: 2.6V @ 7mA
Supplier Device Package: Die
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 6.1 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 242 pF @ 400 V
auf Bestellung 250 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
250+22.46 EUR
Mindestbestellmenge: 250
Im Einkaufswagen  Stück im Wert von  UAH
GS66508B-MR
GS66508B-MR
Hersteller: Infineon Technologies Canada Inc.
Description: GS66508B-MR
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 63mOhm @ 9A, 6V
Vgs(th) (Max) @ Id: 2.6V @ 7mA
Supplier Device Package: Die
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 6.1 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 242 pF @ 400 V
auf Bestellung 352 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+35.83 EUR
10+26.34 EUR
100+23.39 EUR
Im Einkaufswagen  Stück im Wert von  UAH
GS66508B-TR
GS66508B-TR
Hersteller: Infineon Technologies Canada Inc.
Description: GS66508B-TR
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 63mOhm @ 9A, 6V
Vgs(th) (Max) @ Id: 2.6V @ 7mA
Supplier Device Package: Die
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 6.1 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 242 pF @ 400 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GS66508T-MR
GS66508T-MR
Hersteller: Infineon Technologies Canada Inc.
Description: GS66508T-MR
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 63mOhm @ 9A, 6V
Vgs(th) (Max) @ Id: 2.6V @ 7mA
Supplier Device Package: Die
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 400 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GS66508T-TR
GS66508T-TR
Hersteller: Infineon Technologies Canada Inc.
Description: GS66508T-TR
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 63mOhm @ 9A, 6V
Vgs(th) (Max) @ Id: 2.6V @ 7mA
Supplier Device Package: Die
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 400 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GS66516B-MR
GS66516B-MR
Hersteller: Infineon Technologies Canada Inc.
Description: GS66516B-MR
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 18A, 6V
Vgs(th) (Max) @ Id: 1.3V @ 14mA
Supplier Device Package: Die
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 12.1 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 400 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GS66516B-MR
GS66516B-MR
Hersteller: Infineon Technologies Canada Inc.
Description: GS66516B-MR
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 18A, 6V
Vgs(th) (Max) @ Id: 1.3V @ 14mA
Supplier Device Package: Die
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 12.1 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 400 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GS66516B-TR
GS66516B-TR
Hersteller: Infineon Technologies Canada Inc.
Description: GS66516B-TR
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 18A, 6V
Vgs(th) (Max) @ Id: 1.3V @ 14mA
Supplier Device Package: Die
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 12.1 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 400 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GS66516T-MR
GS66516T-MR
Hersteller: Infineon Technologies Canada Inc.
Description: GS66516T-MR
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 18A, 6V
Vgs(th) (Max) @ Id: 1.3V @ 14mA
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 12.1 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 400 V
auf Bestellung 1350 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
250+49.92 EUR
Mindestbestellmenge: 250
Im Einkaufswagen  Stück im Wert von  UAH
GS66516T-MR
GS66516T-MR
Hersteller: Infineon Technologies Canada Inc.
Description: GS66516T-MR
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 18A, 6V
Vgs(th) (Max) @ Id: 1.3V @ 14mA
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 12.1 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 400 V
auf Bestellung 1465 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+63.31 EUR
10+48.49 EUR
100+42.22 EUR
Im Einkaufswagen  Stück im Wert von  UAH
GS66516T-TR
GS66516T-TR
Hersteller: Infineon Technologies Canada Inc.
Description: GS66516T-TR
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 18A, 6V
Vgs(th) (Max) @ Id: 1.3V @ 14mA
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 12.1 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 400 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
Wählen Sie Seite:   [  << Vorherige Seite ]  1 2