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S26HS01GTFPBHB030 Infineon Technologies Infineon-S26HS01GTGABHM020-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7f2a768a017f52f2f5182c91 Description: IC FLASH 1GBIT HYPERBUS 24FBGA
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S26HS01GTFPBHB033 Infineon Technologies Infineon-S26HS01GTGABHM020-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7f2a768a017f52f2f5182c91 Description: IC FLASH 1GBIT HYPERBUS 24FBGA
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SLB9670VQ12FW643XUMA2 SLB9670VQ12FW643XUMA2 Infineon Technologies Infineon-data-sheet-SLB9670_1.2_Rev1.3-DS-v01_03-EN.pdf?fileId=5546d462689a790c016929e445ea4ff7&redirId=115358 Description: SLB9670 - OPTIGA EMBEDDED SECURI
Packaging: Bulk
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: SPI
Operating Temperature: -20°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 1.95V, 3V ~ 3.6V
Controller Series: OPTIGA™ TPM
Program Memory Type: NVM (6kB)
Applications: Trusted Platform Module (TPM)
Core Processor: 16-Bit
Supplier Device Package: 32-VQFN (5x5)
Part Status: Active
Number of I/O: 1
DigiKey Programmable: Not Verified
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IRF6618TRPBF IRF6618TRPBF Infineon Technologies irf6618pbf.pdf?fileId=5546d462533600a4015355e862c21a1b Description: MOSFET N-CH 30V 30A DIRECTFET
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric MT
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 170A (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 30A, 10V
Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 250µA
Supplier Device Package: DIRECTFET™ MT
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 5640 pF @ 15 V
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IRF6618TRPBF IRF6618TRPBF Infineon Technologies irf6618pbf.pdf?fileId=5546d462533600a4015355e862c21a1b Description: MOSFET N-CH 30V 30A DIRECTFET
Packaging: Cut Tape (CT)
Package / Case: DirectFET™ Isometric MT
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 170A (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 30A, 10V
Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 250µA
Supplier Device Package: DIRECTFET™ MT
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 5640 pF @ 15 V
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10+3.6 EUR
100+2.51 EUR
500+2.04 EUR
1000+1.89 EUR
2000+1.82 EUR
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CY90F543GPF-GE1 CY90F543GPF-GE1 Infineon Technologies Infineon-16-bit_Microcontroller_F2MC-16LX_MB90540G_545G_Series-AdditionalTechnicalInformation-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0edc8f4d6071&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integ Description: IC MCU 16BIT 128KB FLASH 100QFP
Packaging: Tray
Package / Case: 100-BQFP
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 6K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-16LX
Data Converters: A/D 8x8/10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: CANbus, EBI/EMI, SCI, Serial I/O, UART/USART
Peripherals: POR, WDT
Supplier Device Package: 100-QFP (14x20)
Number of I/O: 81
DigiKey Programmable: Not Verified
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S6BP201A1AST2B00A Infineon Technologies S6BP201A_RevE_11-18-20.pdf Description: IC REG
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FM24V02A-GTR FM24V02A-GTR Infineon Technologies Infineon-FM24V02A_256_Kbit_(32K_8)_Serial_(I2C)_F_RAM-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec9592741c0&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC FRAM 256KBIT I2C 3.4MHZ 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 3.6V
Technology: FRAM (Ferroelectric RAM)
Clock Frequency: 3.4 MHz
Memory Format: FRAM
Supplier Device Package: 8-SOIC
Part Status: Active
Memory Interface: I2C
Access Time: 130 ns
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
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FM24V02A-GTR FM24V02A-GTR Infineon Technologies Infineon-FM24V02A_256_Kbit_(32K_8)_Serial_(I2C)_F_RAM-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec9592741c0&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC FRAM 256KBIT I2C 3.4MHZ 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 3.6V
Technology: FRAM (Ferroelectric RAM)
Clock Frequency: 3.4 MHz
Memory Format: FRAM
Supplier Device Package: 8-SOIC
Part Status: Active
Memory Interface: I2C
Access Time: 130 ns
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
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10+7.21 EUR
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100+6.67 EUR
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AUIRFS4410ZTRL-INF AUIRFS4410ZTRL-INF Infineon Technologies IRSDS11824-1.pdf?t.download=true&u=5oefqw Description: AUTOMOTIVE HEXFET N CHANNEL
Packaging: Bulk
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 97A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 58A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.037mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4820 pF @ 50 V
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IRFS4410ZPBF IRFS4410ZPBF Infineon Technologies irfb4410zpbf.pdf?fileId=5546d462533600a40153561644141e3a Description: MOSFET N-CH 100V 97A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 97A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 58A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 4V @ 150µA
Supplier Device Package: D2PAK
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4820 pF @ 50 V
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S25FL128SAGMFIG11 S25FL128SAGMFIG11 Infineon Technologies Infineon-S25FL128S_S25FL256S_128_Mb_(16_MB)_256_Mb_(32_MB)_3.0V_SPI_Flash_Memory-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecfb6a64a17 Description: IC FLASH 128MBIT SPI/QUAD 16SOIC
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1+21.88 EUR
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CY2313ANZSXC-1 CY2313ANZSXC-1 Infineon Technologies CY2313ANZ.pdf Description: IC CLK BUFF 13OUT SDRAM 28SOIC
Packaging: Tube
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Output: Clock
Frequency - Max: 100MHz
Input: Clock
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3.135V ~ 3.465V
Main Purpose: Memory, SDRAM DIMM
Ratio - Input:Output: 1:13
Differential - Input:Output: No/No
Supplier Device Package: 28-SOIC
PLL: No
Part Status: Obsolete
Number of Circuits: 1
DigiKey Programmable: Not Verified
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IPB011N04NF2SATMA1 IPB011N04NF2SATMA1 Infineon Technologies Infineon-IPB011N04NF2S-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c850f4bee01851d12a0c16af1 Description: TRENCH <= 40V
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Ta), 201A (Tc)
Rds On (Max) @ Id, Vgs: 1.15mOhm @ 100A, 10V
Power Dissipation (Max): 3.8W (Ta), 375W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 249µA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 315 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15000 pF @ 20 V
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IPB011N04NF2SATMA1 IPB011N04NF2SATMA1 Infineon Technologies Infineon-IPB011N04NF2S-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c850f4bee01851d12a0c16af1 Description: TRENCH <= 40V
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Ta), 201A (Tc)
Rds On (Max) @ Id, Vgs: 1.15mOhm @ 100A, 10V
Power Dissipation (Max): 3.8W (Ta), 375W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 249µA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 315 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15000 pF @ 20 V
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CY9AFB42NBBGL-GK9E1 CY9AFB42NBBGL-GK9E1 Infineon Technologies Infineon-CY9AB40NB_Series_32_bit_Arm_Cortex_M3_FM3_Microcontroller-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee06c916608 Description: IC MCU 32BIT 160KB FLASH 112BGA
Packaging: Tray
Package / Case: 112-LFBGA
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 160KB (160K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 24x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
Connectivity: CSIO, EBI/EMI, I2C, UART/USART, USB
Peripherals: DMA, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 112-PFBGA (10x10)
Part Status: Active
Number of I/O: 83
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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S25FL256SAGNFE001 S25FL256SAGNFE001 Infineon Technologies Description: IC FLASH 256MBIT SPI/QUAD 8WSON
Packaging: Tube
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 8-WSON (6x8)
Part Status: Active
Write Cycle Time - Word, Page: 750µs
Memory Interface: SPI - Quad I/O
Access Time: 6.5 ns
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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F3L100R07W2H3B11BPSA1 F3L100R07W2H3B11BPSA1 Infineon Technologies Infineon-F3L100R07W2H3_B11-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7e7124d1017f1be7e1f51521 Description: IGBT MODULE 650V 70A AG-EASY2B
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Level Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 100A
NTC Thermistor: Yes
Supplier Device Package: AG-EASY2B
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 32 µA
Input Capacitance (Cies) @ Vce: 6.2 nF @ 650 V
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PEB3342HTV22XP PEB3342HTV22XP Infineon Technologies Description: TELEPHONY INTERFACE CIRCUIT
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47+10.8 EUR
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CY37064P100-125AXC CY37064P100-125AXC Infineon Technologies Ultra%20370000%20CPLD%20Family.pdf Description: IC CPLD 64MC 10NS 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Programmable Type: In-System Reprogrammable™ (ISR™) CMOS
Number of Macrocells: 64
Operating Temperature: 0°C ~ 70°C (TA)
Delay Time tpd(1) Max: 10 ns
Supplier Device Package: 100-TQFP (14x14)
Voltage Supply - Internal: 4.75V ~ 5.25V
Part Status: Obsolete
Number of I/O: 69
DigiKey Programmable: Verified
Produkt ist nicht verfügbar
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CY37064P100-125AC CY37064P100-125AC Infineon Technologies Ultra%20370000%20CPLD%20Family.pdf Description: IC CPLD 64MC 10NS 100TQFP
Packaging: Bag
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Programmable Type: In-System Reprogrammable™ (ISR™) CMOS
Number of Macrocells: 64
Operating Temperature: 0°C ~ 70°C (TA)
Delay Time tpd(1) Max: 10 ns
Supplier Device Package: 100-TQFP (14x14)
Voltage Supply - Internal: 4.75V ~ 5.25V
Part Status: Obsolete
Number of I/O: 69
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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BSM75GB120DN2HOSA1 Infineon Technologies 75gb120dn2.pdf Description: MEDIUM POWER 34MM
auf Bestellung 74 Stücke:
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4+131.1 EUR
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BG 3230 E6327 BG 3230 E6327 Infineon Technologies BG3230,%20BG3230R.pdf Description: MOSFET N-CH DUAL 8V SOT-363
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FM28V100-TGTR FM28V100-TGTR Infineon Technologies Infineon-FM28V100_1_MBIT_(128K_X_8)_F-RAM_MEMORY-DataSheet-v08_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec8921d410d&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC FRAM 1MBIT PARALLEL 32TSOP I
Packaging: Tape & Reel (TR)
Package / Case: 32-TFSOP (0.465", 11.80mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 3.6V
Technology: FRAM (Ferroelectric RAM)
Memory Format: FRAM
Supplier Device Package: 32-TSOP I
Part Status: Active
Write Cycle Time - Word, Page: 90ns
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
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FM28V100-TGTR FM28V100-TGTR Infineon Technologies Infineon-FM28V100_1_MBIT_(128K_X_8)_F-RAM_MEMORY-DataSheet-v08_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec8921d410d&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC FRAM 1MBIT PARALLEL 32TSOP I
Packaging: Cut Tape (CT)
Package / Case: 32-TFSOP (0.465", 11.80mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 3.6V
Technology: FRAM (Ferroelectric RAM)
Memory Format: FRAM
Supplier Device Package: 32-TSOP I
Part Status: Active
Write Cycle Time - Word, Page: 90ns
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
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10+32.43 EUR
25+30.92 EUR
50+29.83 EUR
100+28.77 EUR
250+27.43 EUR
500+26.45 EUR
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FM28V100-TG FM28V100-TG Infineon Technologies Infineon-FM28V100_1_MBIT_(128K_X_8)_F-RAM_MEMORY-DataSheet-v08_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec8921d410d&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC FRAM 1MBIT PARALLEL 32TSOP I
Packaging: Tray
Package / Case: 32-TFSOP (0.465", 11.80mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 3.6V
Technology: FRAM (Ferroelectric RAM)
Memory Format: FRAM
Supplier Device Package: 32-TSOP I
Part Status: Active
Write Cycle Time - Word, Page: 90ns
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
auf Bestellung 175 Stücke:
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1+36.17 EUR
10+33.5 EUR
25+32.44 EUR
50+31.64 EUR
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FM28V102A-TG FM28V102A-TG Infineon Technologies Infineon-FM28V102A_1-Mbit_(64_K_16)_F-RAM_Memory-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec8c591413e&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC FRAM 1MBIT PARALLEL 44TSOP II
Packaging: Tray
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 3.6V
Technology: FRAM (Ferroelectric RAM)
Memory Format: FRAM
Supplier Device Package: 44-TSOP II
Part Status: Active
Write Cycle Time - Word, Page: 90ns
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 64K x 16
DigiKey Programmable: Not Verified
auf Bestellung 19 Stücke:
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1+31.93 EUR
10+28.33 EUR
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FM28V020-T28GTR FM28V020-T28GTR Infineon Technologies Infineon-FM28V020_256_KBIT_(32K_X_8)_F-RAM_MEMORY-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec8aa524123&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC FRAM 256KBIT PAR 28TSOP I
Packaging: Tape & Reel (TR)
Package / Case: 28-TSSOP (0.465", 11.80mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 3.6V
Technology: FRAM (Ferroelectric RAM)
Memory Format: FRAM
Supplier Device Package: 28-TSOP I
Write Cycle Time - Word, Page: 140ns
Memory Interface: Parallel
Access Time: 140 ns
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY7C1019D-10VXI CY7C1019D-10VXI Infineon Technologies Infineon-CY7C1019D_1-Mbit_(128_K_8)_Static_RAM-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebf2577333a&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC SRAM 1MBIT PARALLEL 32SOJ
Packaging: Tube
Package / Case: 32-BSOJ (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-SOJ
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
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CY7C1019DV33-10VXI CY7C1019DV33-10VXI Infineon Technologies download description Description: IC SRAM 1MBIT PARALLEL 32SOJ
Packaging: Tube
Package / Case: 32-BSOJ (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-SOJ
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
auf Bestellung 342 Stücke:
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S29GL512S11TFIV10 S29GL512S11TFIV10 Infineon Technologies Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai Description: IC FLASH 512MBIT PARALLEL 56TSOP
Packaging: Bulk
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Part Status: Active
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 32M x 16
DigiKey Programmable: Not Verified
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CY91F523JSEPMC-GTE1 Infineon Technologies Description: IC MCU 32BIT 448KB FLASH 120LQFP
Packaging: Tray
Package / Case: 120-LQFP
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 448KB (448K x 8)
RAM Size: 56K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: FR81S
Data Converters: A/D 42x12b SAR; D/A 2x8b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, I²C, LINbus, SPI, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 120-LQFP (16x16)
Number of I/O: 96
DigiKey Programmable: Not Verified
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IRLR2705TRPBF IRLR2705TRPBF Infineon Technologies irlr2705pbf.pdf?fileId=5546d462533600a40153566cb38f2673 Description: MOSFET N-CH 55V 28A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 17A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 25 V
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IRLR2705TRPBF IRLR2705TRPBF Infineon Technologies irlr2705pbf.pdf?fileId=5546d462533600a40153566cb38f2673 Description: MOSFET N-CH 55V 28A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 17A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 25 V
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CY8C29666-24LTXI CY8C29666-24LTXI Infineon Technologies Infineon-CY8C29466_CY8C29566_CY8C29666_CY8C29866_PSoC_Programmable_System-on-Chip-DataSheet-v31_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec690c03ce1&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integra Description: IC MCU 8BIT 32KB FLASH 48QFN
Packaging: Tray
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Data Converters: A/D 12x14b; D/A 4x9b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.25V
Connectivity: I2C, SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 48-QFN (7x7)
Part Status: Active
Number of I/O: 44
DigiKey Programmable: Not Verified
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BSP76E6327HUSA1 BSP76E6327HUSA1 Infineon Technologies Infineon-BSP76-DS-v01_03-en.pdf?folderId=db3a3043163797a6011667aa084c0e01&fileId=db3a3043271faefd01274d00e2695d45&ack=t Description: IC PWR DRVR N-CHAN 1:1 SOT223-4
Packaging: Tape & Reel (TR)
Features: Auto Restart
Package / Case: TO-261-4, TO-261AA
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 150mOhm
Input Type: Non-Inverting
Voltage - Load: 42V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.4A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-SOT223-4
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Obsolete
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CY8CMBR3116-LQXIT CY8CMBR3116-LQXIT Infineon Technologies Infineon-CY8CMBR3002_CY8CMBR3102_CY8CMBR3106S_CY8CMBR3108_CY8CMBR3110_CY8CMBR3116-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe3508318e Description: IC CAP SENSE 24QFN
Packaging: Tape & Reel (TR)
Package / Case: 24-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C
Type: Buttons
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V ~ 5.5V
Current - Supply: 140mA
Number of Inputs: Up to 16
Supplier Device Package: 24-QFN (4x4)
Proximity Detection: Yes
LED Driver Channels: Up to 8
Part Status: Active
DigiKey Programmable: Not Verified
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CY8CMBR3116-LQXIT CY8CMBR3116-LQXIT Infineon Technologies Infineon-CY8CMBR3002_CY8CMBR3102_CY8CMBR3106S_CY8CMBR3108_CY8CMBR3110_CY8CMBR3116-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe3508318e Description: IC CAP SENSE 24QFN
Packaging: Cut Tape (CT)
Package / Case: 24-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C
Type: Buttons
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V ~ 5.5V
Current - Supply: 140mA
Number of Inputs: Up to 16
Supplier Device Package: 24-QFN (4x4)
Proximity Detection: Yes
LED Driver Channels: Up to 8
Part Status: Active
DigiKey Programmable: Not Verified
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MB95F013KPMC-G-SNE2 MB95F013KPMC-G-SNE2 Infineon Technologies 5047 Description: IC MCU 32LQFP
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IAUC100N10S5L040ATMA1 IAUC100N10S5L040ATMA1 Infineon Technologies Infineon-IAUC100N10S5L040-DS-v01_00-EN.pdf?fileId=5546d462694c98b401696d0485683542 Description: MOSFET N-CH 100V 100A 8TDSON-34
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 50A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 2V @ 90µA
Supplier Device Package: PG-TDSON-8-34
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
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IAUC100N10S5L040ATMA1 IAUC100N10S5L040ATMA1 Infineon Technologies Infineon-IAUC100N10S5L040-DS-v01_00-EN.pdf?fileId=5546d462694c98b401696d0485683542 Description: MOSFET N-CH 100V 100A 8TDSON-34
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 50A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 2V @ 90µA
Supplier Device Package: PG-TDSON-8-34
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
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IPB80N06S2LH5ATMA3 Infineon Technologies Description: MOSFET
Produkt ist nicht verfügbar
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BGS 12AL7-6 E6433 BGS 12AL7-6 E6433 Infineon Technologies BGS12AL7-6.pdf?folderId=db3a304314dca3890115176d140c0ca3&fileId=db3a30431d8a6b3c011dbf68acde2884 Description: IC RF SWITCH SPDT 3GHZ TSLP7-6
Packaging: Tape & Reel (TR)
Features: DC Blocked, Single Line Control
Package / Case: 6-XFDFN Exposed Pad
Impedance: 50Ohm
Mounting Type: Surface Mount
Circuit: SPDT
RF Type: General Purpose
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 2.4V ~ 3.6V
Insertion Loss: 0.5dB
Frequency Range: 30MHz ~ 3GHz
Topology: Reflective
Test Frequency: 2GHz
Isolation: 25dB
Supplier Device Package: PG-TSLP-7-6
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BGS12AL76E6327XTMA1 BGS12AL76E6327XTMA1 Infineon Technologies BGS12AL7-6.pdf Description: IC RF SWITCH SPDT 3GHZ TSLP7-6
Packaging: Tape & Reel (TR)
Features: DC Blocked, Single Line Control
Package / Case: 6-XFDFN Exposed Pad
Impedance: 50Ohm
Mounting Type: Surface Mount
Circuit: SPDT
RF Type: General Purpose
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 2.4V ~ 3.6V
Insertion Loss: 0.5dB
Frequency Range: 30MHz ~ 3GHz
Topology: Reflective
Test Frequency: 2GHz
Isolation: 25dB
Supplier Device Package: PG-TSLP-7-6
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BGS12AL76E6327XTMA1 BGS12AL76E6327XTMA1 Infineon Technologies BGS12AL7-6.pdf Description: IC RF SWITCH SPDT 3GHZ TSLP7-6
Packaging: Cut Tape (CT)
Features: DC Blocked, Single Line Control
Package / Case: 6-XFDFN Exposed Pad
Impedance: 50Ohm
Mounting Type: Surface Mount
Circuit: SPDT
RF Type: General Purpose
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 2.4V ~ 3.6V
Insertion Loss: 0.5dB
Frequency Range: 30MHz ~ 3GHz
Topology: Reflective
Test Frequency: 2GHz
Isolation: 25dB
Supplier Device Package: PG-TSLP-7-6
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BGS 12A TR E6327 BGS 12A TR E6327 Infineon Technologies fundamentals-of-power-semiconductors Description: IC RF SWITCH SPDT 3GHZ FWLP-6
Packaging: Tape & Reel (TR)
Features: DC Blocked, Single Line Control
Package / Case: 6-XFBGA, WLCSP
Impedance: 50Ohm
Circuit: SPDT
RF Type: General Purpose
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 2.4V ~ 3.6V
Insertion Loss: 0.6dB
Frequency Range: 100MHz ~ 3GHz
Topology: Reflective
Test Frequency: 2GHz
Isolation: 27dB
Supplier Device Package: FWLP-6
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BGS12AL74E6327XTSA1 BGS12AL74E6327XTSA1 Infineon Technologies BGS12AL7-4.pdf Description: IC RF SWITCH SPDT 3GHZ TSLP7-4
Packaging: Tape & Reel (TR)
Features: DC Blocked, Single Line Control
Package / Case: 6-XFDFN Exposed Pad
Impedance: 50Ohm
Circuit: SPDT
RF Type: General Purpose
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 2.4V ~ 3.6V
Insertion Loss: 0.5dB
Frequency Range: 30MHz ~ 3GHz
Topology: Reflective
Test Frequency: 2GHz
Isolation: 25dB
Supplier Device Package: TSLP-7-4
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BGS12AL74E6327XTSA1 BGS12AL74E6327XTSA1 Infineon Technologies BGS12AL7-4.pdf Description: IC RF SWITCH SPDT 3GHZ TSLP7-4
Packaging: Cut Tape (CT)
Features: DC Blocked, Single Line Control
Package / Case: 6-XFDFN Exposed Pad
Impedance: 50Ohm
Circuit: SPDT
RF Type: General Purpose
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 2.4V ~ 3.6V
Insertion Loss: 0.5dB
Frequency Range: 30MHz ~ 3GHz
Topology: Reflective
Test Frequency: 2GHz
Isolation: 25dB
Supplier Device Package: TSLP-7-4
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CY8C624ALQI-S2D42 CY8C624ALQI-S2D42 Infineon Technologies Infineon-PSOC_6_MCU_CY8C62X8_CY8C62XA-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee7d03a70b1 Description: IC MCU 32BIT 2MB FLASH 68QFN
Packaging: Tray
Package / Case: 68-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 100MHz, 150MHz
Program Memory Size: 2MB (2M x 8)
RAM Size: 1M x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
Data Converters: A/D 16x10b SAR, 16x12b Sigma-Delta; D/A 2x7/8b
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
Connectivity: eMMC/SD/SDIO, FIFO, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART, USB
Peripherals: Brown-out Detect/Reset, CapSense, Crypto - AES, I2S, DMA, LCD, LVD, POR, PWM, RSA, SHA, Temp Sensor, TRNG, WDT
Supplier Device Package: 68-QFN (8x8)
Part Status: Active
Number of I/O: 53
DigiKey Programmable: Not Verified
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NAC1080XTMA2 NAC1080XTMA2 Infineon Technologies Infineon-NAC1080-DataSheet-v01_01-EN.pdf?fileId=8ac78c8c7d718a49017db42a43930b11 Description: CONTACTLESS POWER&SENSOR
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Interface: I2C, SPI, UART
Type: RFID Reader/Transponder
Standards: ISO 14443A
Supplier Device Package: PG-DSO-16-45
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NAC1080XTMA2 NAC1080XTMA2 Infineon Technologies Infineon-NAC1080-DataSheet-v01_01-EN.pdf?fileId=8ac78c8c7d718a49017db42a43930b11 Description: CONTACTLESS POWER&SENSOR
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Interface: I2C, SPI, UART
Type: RFID Reader/Transponder
Standards: ISO 14443A
Supplier Device Package: PG-DSO-16-45
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DEVKITNAC1080TOBO1 DEVKITNAC1080TOBO1 Infineon Technologies Infineon-NFC_actuation_sensing_IC_NAC1080_development_kit-UserManual-v01_00-EN.pdf?fileId=8ac78c8c818eceac0181a491934d4c3d Description: DEV KIT
Packaging: Bulk
For Use With/Related Products: NAC1080
Frequency: 13.56MHz
Type: Near Field Communication (NFC)
Supplied Contents: Board(s)
Part Status: Active
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IRF3007STRLPBF IRF3007STRLPBF Infineon Technologies irf3007spbf.pdf Description: MOSFET N CH 75V 62A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
Rds On (Max) @ Id, Vgs: 12.6mOhm @ 48A, 10V
Power Dissipation (Max): 120W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3270 pF @ 25 V
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IRF3007STRLPBF IRF3007STRLPBF Infineon Technologies irf3007spbf.pdf Description: MOSFET N CH 75V 62A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
Rds On (Max) @ Id, Vgs: 12.6mOhm @ 48A, 10V
Power Dissipation (Max): 120W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3270 pF @ 25 V
auf Bestellung 3084 Stücke:
Lieferzeit 10-14 Tag (e)
4+4.79 EUR
10+3.11 EUR
100+2.15 EUR
Mindestbestellmenge: 4
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CY9AF141MBBGL-GK9E1 CY9AF141MBBGL-GK9E1 Infineon Technologies Infineon-CY9A140NB_Series_32_Bit_Arm_Cortex_M3_FM3_Microcontroller-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee002d66576 Description: IC MCU 32BIT 64KB FLASH 96FBGA
Packaging: Tray
Package / Case: 96-LFBGA
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 17x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
Connectivity: CSIO, EBI/EMI, I2C, SPI, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 96-FBGA (6x6)
Number of I/O: 66
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY9AF142LAQN-G-AVE2 CY9AF142LAQN-G-AVE2 Infineon Technologies Description: IC MCU 32BIT 160KB FLASH 64QFN
Produkt ist nicht verfügbar
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CY9AF141MBPMC1-G-JNE2 CY9AF141MBPMC1-G-JNE2 Infineon Technologies Infineon-CY9A140NB_Series_32_Bit_Arm_Cortex_M3_FM3_Microcontroller-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee002d66576&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC MCU 32BIT 64KB FLASH 80LQFP
Produkt ist nicht verfügbar
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CY9AF141MABGL-GK9E1 CY9AF141MABGL-GK9E1 Infineon Technologies Description: IC MCU 32BIT 96KB FLASH 96FBGA
Packaging: Tray
Package / Case: 96-LFBGA
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 96KB (96K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 17x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
Connectivity: CSIO, EBI/EMI, I2C, SPI, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 96-FBGA (6x6)
Number of I/O: 66
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY9AF141NABGL-GK9E1 Infineon Technologies Description: MM MCU
Produkt ist nicht verfügbar
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CY9AF141NBBGL-GK9E1 CY9AF141NBBGL-GK9E1 Infineon Technologies Description: IC MCU 32BIT 64KB FLASH 112BGA
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S26HS01GTFPBHB030 Infineon-S26HS01GTGABHM020-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7f2a768a017f52f2f5182c91
Hersteller: Infineon Technologies
Description: IC FLASH 1GBIT HYPERBUS 24FBGA
Produkt ist nicht verfügbar
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S26HS01GTFPBHB033 Infineon-S26HS01GTGABHM020-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7f2a768a017f52f2f5182c91
Hersteller: Infineon Technologies
Description: IC FLASH 1GBIT HYPERBUS 24FBGA
Produkt ist nicht verfügbar
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SLB9670VQ12FW643XUMA2 Infineon-data-sheet-SLB9670_1.2_Rev1.3-DS-v01_03-EN.pdf?fileId=5546d462689a790c016929e445ea4ff7&redirId=115358
SLB9670VQ12FW643XUMA2
Hersteller: Infineon Technologies
Description: SLB9670 - OPTIGA EMBEDDED SECURI
Packaging: Bulk
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: SPI
Operating Temperature: -20°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 1.95V, 3V ~ 3.6V
Controller Series: OPTIGA™ TPM
Program Memory Type: NVM (6kB)
Applications: Trusted Platform Module (TPM)
Core Processor: 16-Bit
Supplier Device Package: 32-VQFN (5x5)
Part Status: Active
Number of I/O: 1
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IRF6618TRPBF irf6618pbf.pdf?fileId=5546d462533600a4015355e862c21a1b
IRF6618TRPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 30A DIRECTFET
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric MT
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 170A (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 30A, 10V
Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 250µA
Supplier Device Package: DIRECTFET™ MT
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 5640 pF @ 15 V
Produkt ist nicht verfügbar
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IRF6618TRPBF irf6618pbf.pdf?fileId=5546d462533600a4015355e862c21a1b
IRF6618TRPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 30A DIRECTFET
Packaging: Cut Tape (CT)
Package / Case: DirectFET™ Isometric MT
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 170A (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 30A, 10V
Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 250µA
Supplier Device Package: DIRECTFET™ MT
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 5640 pF @ 15 V
auf Bestellung 2970 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.53 EUR
10+3.6 EUR
100+2.51 EUR
500+2.04 EUR
1000+1.89 EUR
2000+1.82 EUR
Mindestbestellmenge: 4
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CY90F543GPF-GE1 Infineon-16-bit_Microcontroller_F2MC-16LX_MB90540G_545G_Series-AdditionalTechnicalInformation-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0edc8f4d6071&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integ
CY90F543GPF-GE1
Hersteller: Infineon Technologies
Description: IC MCU 16BIT 128KB FLASH 100QFP
Packaging: Tray
Package / Case: 100-BQFP
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 6K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-16LX
Data Converters: A/D 8x8/10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: CANbus, EBI/EMI, SCI, Serial I/O, UART/USART
Peripherals: POR, WDT
Supplier Device Package: 100-QFP (14x20)
Number of I/O: 81
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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S6BP201A1AST2B00A S6BP201A_RevE_11-18-20.pdf
Hersteller: Infineon Technologies
Description: IC REG
Produkt ist nicht verfügbar
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FM24V02A-GTR Infineon-FM24V02A_256_Kbit_(32K_8)_Serial_(I2C)_F_RAM-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec9592741c0&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
FM24V02A-GTR
Hersteller: Infineon Technologies
Description: IC FRAM 256KBIT I2C 3.4MHZ 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 3.6V
Technology: FRAM (Ferroelectric RAM)
Clock Frequency: 3.4 MHz
Memory Format: FRAM
Supplier Device Package: 8-SOIC
Part Status: Active
Memory Interface: I2C
Access Time: 130 ns
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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FM24V02A-GTR Infineon-FM24V02A_256_Kbit_(32K_8)_Serial_(I2C)_F_RAM-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec9592741c0&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
FM24V02A-GTR
Hersteller: Infineon Technologies
Description: IC FRAM 256KBIT I2C 3.4MHZ 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 3.6V
Technology: FRAM (Ferroelectric RAM)
Clock Frequency: 3.4 MHz
Memory Format: FRAM
Supplier Device Package: 8-SOIC
Part Status: Active
Memory Interface: I2C
Access Time: 130 ns
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
auf Bestellung 195 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.74 EUR
10+7.21 EUR
25+7 EUR
50+6.83 EUR
100+6.67 EUR
Mindestbestellmenge: 3
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AUIRFS4410ZTRL-INF IRSDS11824-1.pdf?t.download=true&u=5oefqw
AUIRFS4410ZTRL-INF
Hersteller: Infineon Technologies
Description: AUTOMOTIVE HEXFET N CHANNEL
Packaging: Bulk
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 97A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 58A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.037mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4820 pF @ 50 V
Produkt ist nicht verfügbar
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IRFS4410ZPBF irfb4410zpbf.pdf?fileId=5546d462533600a40153561644141e3a
IRFS4410ZPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 97A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 97A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 58A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 4V @ 150µA
Supplier Device Package: D2PAK
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4820 pF @ 50 V
Produkt ist nicht verfügbar
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S25FL128SAGMFIG11 Infineon-S25FL128S_S25FL256S_128_Mb_(16_MB)_256_Mb_(32_MB)_3.0V_SPI_Flash_Memory-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecfb6a64a17
S25FL128SAGMFIG11
Hersteller: Infineon Technologies
Description: IC FLASH 128MBIT SPI/QUAD 16SOIC
auf Bestellung 826 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+21.88 EUR
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CY2313ANZSXC-1 CY2313ANZ.pdf
CY2313ANZSXC-1
Hersteller: Infineon Technologies
Description: IC CLK BUFF 13OUT SDRAM 28SOIC
Packaging: Tube
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Output: Clock
Frequency - Max: 100MHz
Input: Clock
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3.135V ~ 3.465V
Main Purpose: Memory, SDRAM DIMM
Ratio - Input:Output: 1:13
Differential - Input:Output: No/No
Supplier Device Package: 28-SOIC
PLL: No
Part Status: Obsolete
Number of Circuits: 1
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IPB011N04NF2SATMA1 Infineon-IPB011N04NF2S-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c850f4bee01851d12a0c16af1
IPB011N04NF2SATMA1
Hersteller: Infineon Technologies
Description: TRENCH <= 40V
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Ta), 201A (Tc)
Rds On (Max) @ Id, Vgs: 1.15mOhm @ 100A, 10V
Power Dissipation (Max): 3.8W (Ta), 375W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 249µA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 315 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15000 pF @ 20 V
Produkt ist nicht verfügbar
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IPB011N04NF2SATMA1 Infineon-IPB011N04NF2S-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c850f4bee01851d12a0c16af1
IPB011N04NF2SATMA1
Hersteller: Infineon Technologies
Description: TRENCH <= 40V
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Ta), 201A (Tc)
Rds On (Max) @ Id, Vgs: 1.15mOhm @ 100A, 10V
Power Dissipation (Max): 3.8W (Ta), 375W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 249µA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 315 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15000 pF @ 20 V
Produkt ist nicht verfügbar
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CY9AFB42NBBGL-GK9E1 Infineon-CY9AB40NB_Series_32_bit_Arm_Cortex_M3_FM3_Microcontroller-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee06c916608
CY9AFB42NBBGL-GK9E1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 160KB FLASH 112BGA
Packaging: Tray
Package / Case: 112-LFBGA
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 160KB (160K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 24x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
Connectivity: CSIO, EBI/EMI, I2C, UART/USART, USB
Peripherals: DMA, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 112-PFBGA (10x10)
Part Status: Active
Number of I/O: 83
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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S25FL256SAGNFE001
S25FL256SAGNFE001
Hersteller: Infineon Technologies
Description: IC FLASH 256MBIT SPI/QUAD 8WSON
Packaging: Tube
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 8-WSON (6x8)
Part Status: Active
Write Cycle Time - Word, Page: 750µs
Memory Interface: SPI - Quad I/O
Access Time: 6.5 ns
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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F3L100R07W2H3B11BPSA1 Infineon-F3L100R07W2H3_B11-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7e7124d1017f1be7e1f51521
F3L100R07W2H3B11BPSA1
Hersteller: Infineon Technologies
Description: IGBT MODULE 650V 70A AG-EASY2B
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Level Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 100A
NTC Thermistor: Yes
Supplier Device Package: AG-EASY2B
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 32 µA
Input Capacitance (Cies) @ Vce: 6.2 nF @ 650 V
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+80.84 EUR
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PEB3342HTV22XP
PEB3342HTV22XP
Hersteller: Infineon Technologies
Description: TELEPHONY INTERFACE CIRCUIT
auf Bestellung 300 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
47+10.8 EUR
Mindestbestellmenge: 47
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CY37064P100-125AXC Ultra%20370000%20CPLD%20Family.pdf
CY37064P100-125AXC
Hersteller: Infineon Technologies
Description: IC CPLD 64MC 10NS 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Programmable Type: In-System Reprogrammable™ (ISR™) CMOS
Number of Macrocells: 64
Operating Temperature: 0°C ~ 70°C (TA)
Delay Time tpd(1) Max: 10 ns
Supplier Device Package: 100-TQFP (14x14)
Voltage Supply - Internal: 4.75V ~ 5.25V
Part Status: Obsolete
Number of I/O: 69
DigiKey Programmable: Verified
Produkt ist nicht verfügbar
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CY37064P100-125AC Ultra%20370000%20CPLD%20Family.pdf
CY37064P100-125AC
Hersteller: Infineon Technologies
Description: IC CPLD 64MC 10NS 100TQFP
Packaging: Bag
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Programmable Type: In-System Reprogrammable™ (ISR™) CMOS
Number of Macrocells: 64
Operating Temperature: 0°C ~ 70°C (TA)
Delay Time tpd(1) Max: 10 ns
Supplier Device Package: 100-TQFP (14x14)
Voltage Supply - Internal: 4.75V ~ 5.25V
Part Status: Obsolete
Number of I/O: 69
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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BSM75GB120DN2HOSA1 75gb120dn2.pdf
Hersteller: Infineon Technologies
Description: MEDIUM POWER 34MM
auf Bestellung 74 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+131.1 EUR
Mindestbestellmenge: 4
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BG 3230 E6327 BG3230,%20BG3230R.pdf
BG 3230 E6327
Hersteller: Infineon Technologies
Description: MOSFET N-CH DUAL 8V SOT-363
Produkt ist nicht verfügbar
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FM28V100-TGTR Infineon-FM28V100_1_MBIT_(128K_X_8)_F-RAM_MEMORY-DataSheet-v08_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec8921d410d&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
FM28V100-TGTR
Hersteller: Infineon Technologies
Description: IC FRAM 1MBIT PARALLEL 32TSOP I
Packaging: Tape & Reel (TR)
Package / Case: 32-TFSOP (0.465", 11.80mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 3.6V
Technology: FRAM (Ferroelectric RAM)
Memory Format: FRAM
Supplier Device Package: 32-TSOP I
Part Status: Active
Write Cycle Time - Word, Page: 90ns
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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FM28V100-TGTR Infineon-FM28V100_1_MBIT_(128K_X_8)_F-RAM_MEMORY-DataSheet-v08_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec8921d410d&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
FM28V100-TGTR
Hersteller: Infineon Technologies
Description: IC FRAM 1MBIT PARALLEL 32TSOP I
Packaging: Cut Tape (CT)
Package / Case: 32-TFSOP (0.465", 11.80mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 3.6V
Technology: FRAM (Ferroelectric RAM)
Memory Format: FRAM
Supplier Device Package: 32-TSOP I
Part Status: Active
Write Cycle Time - Word, Page: 90ns
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
auf Bestellung 637 Stücke:
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Anzahl Preis
1+36.56 EUR
10+32.43 EUR
25+30.92 EUR
50+29.83 EUR
100+28.77 EUR
250+27.43 EUR
500+26.45 EUR
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FM28V100-TG Infineon-FM28V100_1_MBIT_(128K_X_8)_F-RAM_MEMORY-DataSheet-v08_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec8921d410d&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
FM28V100-TG
Hersteller: Infineon Technologies
Description: IC FRAM 1MBIT PARALLEL 32TSOP I
Packaging: Tray
Package / Case: 32-TFSOP (0.465", 11.80mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 3.6V
Technology: FRAM (Ferroelectric RAM)
Memory Format: FRAM
Supplier Device Package: 32-TSOP I
Part Status: Active
Write Cycle Time - Word, Page: 90ns
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
auf Bestellung 175 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+36.17 EUR
10+33.5 EUR
25+32.44 EUR
50+31.64 EUR
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FM28V102A-TG Infineon-FM28V102A_1-Mbit_(64_K_16)_F-RAM_Memory-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec8c591413e&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
FM28V102A-TG
Hersteller: Infineon Technologies
Description: IC FRAM 1MBIT PARALLEL 44TSOP II
Packaging: Tray
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 3.6V
Technology: FRAM (Ferroelectric RAM)
Memory Format: FRAM
Supplier Device Package: 44-TSOP II
Part Status: Active
Write Cycle Time - Word, Page: 90ns
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 64K x 16
DigiKey Programmable: Not Verified
auf Bestellung 19 Stücke:
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Anzahl Preis
1+31.93 EUR
10+28.33 EUR
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FM28V020-T28GTR Infineon-FM28V020_256_KBIT_(32K_X_8)_F-RAM_MEMORY-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec8aa524123&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
FM28V020-T28GTR
Hersteller: Infineon Technologies
Description: IC FRAM 256KBIT PAR 28TSOP I
Packaging: Tape & Reel (TR)
Package / Case: 28-TSSOP (0.465", 11.80mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 3.6V
Technology: FRAM (Ferroelectric RAM)
Memory Format: FRAM
Supplier Device Package: 28-TSOP I
Write Cycle Time - Word, Page: 140ns
Memory Interface: Parallel
Access Time: 140 ns
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY7C1019D-10VXI Infineon-CY7C1019D_1-Mbit_(128_K_8)_Static_RAM-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebf2577333a&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY7C1019D-10VXI
Hersteller: Infineon Technologies
Description: IC SRAM 1MBIT PARALLEL 32SOJ
Packaging: Tube
Package / Case: 32-BSOJ (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-SOJ
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY7C1019DV33-10VXI description download
CY7C1019DV33-10VXI
Hersteller: Infineon Technologies
Description: IC SRAM 1MBIT PARALLEL 32SOJ
Packaging: Tube
Package / Case: 32-BSOJ (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-SOJ
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
auf Bestellung 342 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.16 EUR
23+6.48 EUR
46+6.33 EUR
69+6.25 EUR
115+6.14 EUR
253+5.97 EUR
Mindestbestellmenge: 3
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S29GL512S11TFIV10 Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai
S29GL512S11TFIV10
Hersteller: Infineon Technologies
Description: IC FLASH 512MBIT PARALLEL 56TSOP
Packaging: Bulk
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Part Status: Active
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 32M x 16
DigiKey Programmable: Not Verified
auf Bestellung 330 Stücke:
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Anzahl Preis
41+12.37 EUR
Mindestbestellmenge: 41
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CY91F523JSEPMC-GTE1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 448KB FLASH 120LQFP
Packaging: Tray
Package / Case: 120-LQFP
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 448KB (448K x 8)
RAM Size: 56K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: FR81S
Data Converters: A/D 42x12b SAR; D/A 2x8b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, I²C, LINbus, SPI, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 120-LQFP (16x16)
Number of I/O: 96
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IRLR2705TRPBF irlr2705pbf.pdf?fileId=5546d462533600a40153566cb38f2673
IRLR2705TRPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 28A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 17A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 25 V
auf Bestellung 28000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2000+0.43 EUR
4000+0.39 EUR
6000+0.38 EUR
10000+0.36 EUR
14000+0.35 EUR
Mindestbestellmenge: 2000
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IRLR2705TRPBF irlr2705pbf.pdf?fileId=5546d462533600a40153566cb38f2673
IRLR2705TRPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 28A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 17A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 25 V
auf Bestellung 28130 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
11+1.69 EUR
17+1.05 EUR
100+0.69 EUR
500+0.53 EUR
1000+0.48 EUR
Mindestbestellmenge: 11
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CY8C29666-24LTXI Infineon-CY8C29466_CY8C29566_CY8C29666_CY8C29866_PSoC_Programmable_System-on-Chip-DataSheet-v31_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec690c03ce1&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integra
CY8C29666-24LTXI
Hersteller: Infineon Technologies
Description: IC MCU 8BIT 32KB FLASH 48QFN
Packaging: Tray
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Data Converters: A/D 12x14b; D/A 4x9b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.25V
Connectivity: I2C, SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 48-QFN (7x7)
Part Status: Active
Number of I/O: 44
DigiKey Programmable: Not Verified
auf Bestellung 420 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+25.26 EUR
10+20.05 EUR
25+18.74 EUR
100+17.31 EUR
260+16.6 EUR
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BSP76E6327HUSA1 Infineon-BSP76-DS-v01_03-en.pdf?folderId=db3a3043163797a6011667aa084c0e01&fileId=db3a3043271faefd01274d00e2695d45&ack=t
BSP76E6327HUSA1
Hersteller: Infineon Technologies
Description: IC PWR DRVR N-CHAN 1:1 SOT223-4
Packaging: Tape & Reel (TR)
Features: Auto Restart
Package / Case: TO-261-4, TO-261AA
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 150mOhm
Input Type: Non-Inverting
Voltage - Load: 42V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.4A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-SOT223-4
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Obsolete
Produkt ist nicht verfügbar
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CY8CMBR3116-LQXIT Infineon-CY8CMBR3002_CY8CMBR3102_CY8CMBR3106S_CY8CMBR3108_CY8CMBR3110_CY8CMBR3116-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe3508318e
CY8CMBR3116-LQXIT
Hersteller: Infineon Technologies
Description: IC CAP SENSE 24QFN
Packaging: Tape & Reel (TR)
Package / Case: 24-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C
Type: Buttons
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V ~ 5.5V
Current - Supply: 140mA
Number of Inputs: Up to 16
Supplier Device Package: 24-QFN (4x4)
Proximity Detection: Yes
LED Driver Channels: Up to 8
Part Status: Active
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY8CMBR3116-LQXIT Infineon-CY8CMBR3002_CY8CMBR3102_CY8CMBR3106S_CY8CMBR3108_CY8CMBR3110_CY8CMBR3116-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe3508318e
CY8CMBR3116-LQXIT
Hersteller: Infineon Technologies
Description: IC CAP SENSE 24QFN
Packaging: Cut Tape (CT)
Package / Case: 24-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C
Type: Buttons
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V ~ 5.5V
Current - Supply: 140mA
Number of Inputs: Up to 16
Supplier Device Package: 24-QFN (4x4)
Proximity Detection: Yes
LED Driver Channels: Up to 8
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 2314 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.58 EUR
10+3.42 EUR
25+3.13 EUR
100+2.82 EUR
250+2.67 EUR
500+2.58 EUR
1000+2.5 EUR
Mindestbestellmenge: 4
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MB95F013KPMC-G-SNE2 5047
MB95F013KPMC-G-SNE2
Hersteller: Infineon Technologies
Description: IC MCU 32LQFP
Produkt ist nicht verfügbar
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IAUC100N10S5L040ATMA1 Infineon-IAUC100N10S5L040-DS-v01_00-EN.pdf?fileId=5546d462694c98b401696d0485683542
IAUC100N10S5L040ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 100A 8TDSON-34
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 50A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 2V @ 90µA
Supplier Device Package: PG-TDSON-8-34
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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IAUC100N10S5L040ATMA1 Infineon-IAUC100N10S5L040-DS-v01_00-EN.pdf?fileId=5546d462694c98b401696d0485683542
IAUC100N10S5L040ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 100A 8TDSON-34
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 50A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 2V @ 90µA
Supplier Device Package: PG-TDSON-8-34
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2554 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.3 EUR
10+3.44 EUR
100+2.39 EUR
500+1.94 EUR
1000+1.79 EUR
2000+1.71 EUR
Mindestbestellmenge: 4
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IPB80N06S2LH5ATMA3
Hersteller: Infineon Technologies
Description: MOSFET
Produkt ist nicht verfügbar
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BGS 12AL7-6 E6433 BGS12AL7-6.pdf?folderId=db3a304314dca3890115176d140c0ca3&fileId=db3a30431d8a6b3c011dbf68acde2884
BGS 12AL7-6 E6433
Hersteller: Infineon Technologies
Description: IC RF SWITCH SPDT 3GHZ TSLP7-6
Packaging: Tape & Reel (TR)
Features: DC Blocked, Single Line Control
Package / Case: 6-XFDFN Exposed Pad
Impedance: 50Ohm
Mounting Type: Surface Mount
Circuit: SPDT
RF Type: General Purpose
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 2.4V ~ 3.6V
Insertion Loss: 0.5dB
Frequency Range: 30MHz ~ 3GHz
Topology: Reflective
Test Frequency: 2GHz
Isolation: 25dB
Supplier Device Package: PG-TSLP-7-6
Produkt ist nicht verfügbar
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BGS12AL76E6327XTMA1 BGS12AL7-6.pdf
BGS12AL76E6327XTMA1
Hersteller: Infineon Technologies
Description: IC RF SWITCH SPDT 3GHZ TSLP7-6
Packaging: Tape & Reel (TR)
Features: DC Blocked, Single Line Control
Package / Case: 6-XFDFN Exposed Pad
Impedance: 50Ohm
Mounting Type: Surface Mount
Circuit: SPDT
RF Type: General Purpose
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 2.4V ~ 3.6V
Insertion Loss: 0.5dB
Frequency Range: 30MHz ~ 3GHz
Topology: Reflective
Test Frequency: 2GHz
Isolation: 25dB
Supplier Device Package: PG-TSLP-7-6
Produkt ist nicht verfügbar
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BGS12AL76E6327XTMA1 BGS12AL7-6.pdf
BGS12AL76E6327XTMA1
Hersteller: Infineon Technologies
Description: IC RF SWITCH SPDT 3GHZ TSLP7-6
Packaging: Cut Tape (CT)
Features: DC Blocked, Single Line Control
Package / Case: 6-XFDFN Exposed Pad
Impedance: 50Ohm
Mounting Type: Surface Mount
Circuit: SPDT
RF Type: General Purpose
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 2.4V ~ 3.6V
Insertion Loss: 0.5dB
Frequency Range: 30MHz ~ 3GHz
Topology: Reflective
Test Frequency: 2GHz
Isolation: 25dB
Supplier Device Package: PG-TSLP-7-6
Produkt ist nicht verfügbar
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BGS 12A TR E6327 fundamentals-of-power-semiconductors
BGS 12A TR E6327
Hersteller: Infineon Technologies
Description: IC RF SWITCH SPDT 3GHZ FWLP-6
Packaging: Tape & Reel (TR)
Features: DC Blocked, Single Line Control
Package / Case: 6-XFBGA, WLCSP
Impedance: 50Ohm
Circuit: SPDT
RF Type: General Purpose
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 2.4V ~ 3.6V
Insertion Loss: 0.6dB
Frequency Range: 100MHz ~ 3GHz
Topology: Reflective
Test Frequency: 2GHz
Isolation: 27dB
Supplier Device Package: FWLP-6
Produkt ist nicht verfügbar
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BGS12AL74E6327XTSA1 BGS12AL7-4.pdf
BGS12AL74E6327XTSA1
Hersteller: Infineon Technologies
Description: IC RF SWITCH SPDT 3GHZ TSLP7-4
Packaging: Tape & Reel (TR)
Features: DC Blocked, Single Line Control
Package / Case: 6-XFDFN Exposed Pad
Impedance: 50Ohm
Circuit: SPDT
RF Type: General Purpose
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 2.4V ~ 3.6V
Insertion Loss: 0.5dB
Frequency Range: 30MHz ~ 3GHz
Topology: Reflective
Test Frequency: 2GHz
Isolation: 25dB
Supplier Device Package: TSLP-7-4
Produkt ist nicht verfügbar
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BGS12AL74E6327XTSA1 BGS12AL7-4.pdf
BGS12AL74E6327XTSA1
Hersteller: Infineon Technologies
Description: IC RF SWITCH SPDT 3GHZ TSLP7-4
Packaging: Cut Tape (CT)
Features: DC Blocked, Single Line Control
Package / Case: 6-XFDFN Exposed Pad
Impedance: 50Ohm
Circuit: SPDT
RF Type: General Purpose
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 2.4V ~ 3.6V
Insertion Loss: 0.5dB
Frequency Range: 30MHz ~ 3GHz
Topology: Reflective
Test Frequency: 2GHz
Isolation: 25dB
Supplier Device Package: TSLP-7-4
Produkt ist nicht verfügbar
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CY8C624ALQI-S2D42 Infineon-PSOC_6_MCU_CY8C62X8_CY8C62XA-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee7d03a70b1
CY8C624ALQI-S2D42
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 2MB FLASH 68QFN
Packaging: Tray
Package / Case: 68-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 100MHz, 150MHz
Program Memory Size: 2MB (2M x 8)
RAM Size: 1M x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
Data Converters: A/D 16x10b SAR, 16x12b Sigma-Delta; D/A 2x7/8b
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
Connectivity: eMMC/SD/SDIO, FIFO, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART, USB
Peripherals: Brown-out Detect/Reset, CapSense, Crypto - AES, I2S, DMA, LCD, LVD, POR, PWM, RSA, SHA, Temp Sensor, TRNG, WDT
Supplier Device Package: 68-QFN (8x8)
Part Status: Active
Number of I/O: 53
DigiKey Programmable: Not Verified
auf Bestellung 305 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+19.84 EUR
10+15.61 EUR
25+14.55 EUR
100+13.39 EUR
260+12.82 EUR
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NAC1080XTMA2 Infineon-NAC1080-DataSheet-v01_01-EN.pdf?fileId=8ac78c8c7d718a49017db42a43930b11
NAC1080XTMA2
Hersteller: Infineon Technologies
Description: CONTACTLESS POWER&SENSOR
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Interface: I2C, SPI, UART
Type: RFID Reader/Transponder
Standards: ISO 14443A
Supplier Device Package: PG-DSO-16-45
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+2.94 EUR
Mindestbestellmenge: 2500
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NAC1080XTMA2 Infineon-NAC1080-DataSheet-v01_01-EN.pdf?fileId=8ac78c8c7d718a49017db42a43930b11
NAC1080XTMA2
Hersteller: Infineon Technologies
Description: CONTACTLESS POWER&SENSOR
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Interface: I2C, SPI, UART
Type: RFID Reader/Transponder
Standards: ISO 14443A
Supplier Device Package: PG-DSO-16-45
auf Bestellung 4337 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.51 EUR
10+4.13 EUR
25+3.79 EUR
100+3.41 EUR
250+3.23 EUR
500+3.12 EUR
1000+3.04 EUR
Mindestbestellmenge: 4
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DEVKITNAC1080TOBO1 Infineon-NFC_actuation_sensing_IC_NAC1080_development_kit-UserManual-v01_00-EN.pdf?fileId=8ac78c8c818eceac0181a491934d4c3d
DEVKITNAC1080TOBO1
Hersteller: Infineon Technologies
Description: DEV KIT
Packaging: Bulk
For Use With/Related Products: NAC1080
Frequency: 13.56MHz
Type: Near Field Communication (NFC)
Supplied Contents: Board(s)
Part Status: Active
auf Bestellung 13 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+156.38 EUR
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IRF3007STRLPBF irf3007spbf.pdf
IRF3007STRLPBF
Hersteller: Infineon Technologies
Description: MOSFET N CH 75V 62A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
Rds On (Max) @ Id, Vgs: 12.6mOhm @ 48A, 10V
Power Dissipation (Max): 120W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3270 pF @ 25 V
auf Bestellung 2400 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
800+1.61 EUR
1600+1.49 EUR
Mindestbestellmenge: 800
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IRF3007STRLPBF irf3007spbf.pdf
IRF3007STRLPBF
Hersteller: Infineon Technologies
Description: MOSFET N CH 75V 62A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
Rds On (Max) @ Id, Vgs: 12.6mOhm @ 48A, 10V
Power Dissipation (Max): 120W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3270 pF @ 25 V
auf Bestellung 3084 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.79 EUR
10+3.11 EUR
100+2.15 EUR
Mindestbestellmenge: 4
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CY9AF141MBBGL-GK9E1 Infineon-CY9A140NB_Series_32_Bit_Arm_Cortex_M3_FM3_Microcontroller-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee002d66576
CY9AF141MBBGL-GK9E1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 64KB FLASH 96FBGA
Packaging: Tray
Package / Case: 96-LFBGA
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 17x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
Connectivity: CSIO, EBI/EMI, I2C, SPI, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 96-FBGA (6x6)
Number of I/O: 66
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY9AF142LAQN-G-AVE2
CY9AF142LAQN-G-AVE2
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 160KB FLASH 64QFN
Produkt ist nicht verfügbar
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CY9AF141MBPMC1-G-JNE2 Infineon-CY9A140NB_Series_32_Bit_Arm_Cortex_M3_FM3_Microcontroller-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee002d66576&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY9AF141MBPMC1-G-JNE2
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 64KB FLASH 80LQFP
Produkt ist nicht verfügbar
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CY9AF141MABGL-GK9E1
CY9AF141MABGL-GK9E1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 96KB FLASH 96FBGA
Packaging: Tray
Package / Case: 96-LFBGA
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 96KB (96K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 17x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
Connectivity: CSIO, EBI/EMI, I2C, SPI, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 96-FBGA (6x6)
Number of I/O: 66
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY9AF141NABGL-GK9E1
Hersteller: Infineon Technologies
Description: MM MCU
Produkt ist nicht verfügbar
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CY9AF141NBBGL-GK9E1
CY9AF141NBBGL-GK9E1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 64KB FLASH 112BGA
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
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