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FM0-64L-S6E1C3 FM0-64L-S6E1C3 Infineon Technologies Description: S6E1C3 EVAL BRD
Packaging: Bulk
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s), Cable(s)
Core Processor: ARM® Cortex®-M0+
Utilized IC / Part: S6E1C3
Produkt ist nicht verfügbar
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MB39C022NPN-G-ERE1 MB39C022NPN-G-ERE1 Infineon Technologies download Description: IC REG DL BUCK/LINEAR SYNC 10SON
Packaging: Tape & Reel (TR)
Package / Case: 10-WFDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.5V ~ 5.5V
Frequency - Switching: 2MHz
Topology: Step-Down (Buck) Synchronous (1), Linear (LDO) (1)
Supplier Device Package: 10-SON (3x3)
Voltage/Current - Output 1: 0.8V ~ 4.5V, 600mA
Voltage/Current - Output 2: 1.2V, 300mA
w/LED Driver: No
w/Supervisor: No
w/Sequencer: No
Number of Outputs: 2
Produkt ist nicht verfügbar
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MB39C022NPN-G-ERE1 MB39C022NPN-G-ERE1 Infineon Technologies download Description: IC REG DL BUCK/LINEAR SYNC 10SON
Packaging: Cut Tape (CT)
Package / Case: 10-WFDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.5V ~ 5.5V
Frequency - Switching: 2MHz
Topology: Step-Down (Buck) Synchronous (1), Linear (LDO) (1)
Supplier Device Package: 10-SON (3x3)
Voltage/Current - Output 1: 0.8V ~ 4.5V, 600mA
Voltage/Current - Output 2: 1.2V, 300mA
w/LED Driver: No
w/Supervisor: No
w/Sequencer: No
Number of Outputs: 2
auf Bestellung 69 Stücke:
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10+3.77 EUR
25+3.56 EUR
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CYBT-423028-EVAL CYBT-423028-EVAL Infineon Technologies download Description: MODULE KIT
Packaging: Bulk
For Use With/Related Products: CYBT-423028-02
Frequency: 2.4GHz
Type: Transceiver; Bluetooth® 5.x
Supplied Contents: Board(s)
Part Status: Active
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BGM7MHLL4L12E6327XTSA1 Infineon Technologies Part_Number_Guide_Web.pdf Description: IC RF AMP MMIC 12ATSLP
Packaging: Bulk
auf Bestellung 112500 Stücke:
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257+2.06 EUR
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FM25C160B-G FM25C160B-G Infineon Technologies Infineon-FM25C160B_16-Kbit_(2_K_8)_Serial_(SPI)_F-RAM-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec906b74172&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC FRAM 16KBIT SPI 20MHZ 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 16Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: FRAM (Ferroelectric RAM)
Clock Frequency: 20 MHz
Memory Format: FRAM
Supplier Device Package: 8-SOIC
Part Status: Active
Memory Interface: SPI
Memory Organization: 2K x 8
DigiKey Programmable: Not Verified
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5+3.91 EUR
10+3.47 EUR
25+3.31 EUR
97+3.08 EUR
194+2.98 EUR
291+2.91 EUR
582+2.81 EUR
1067+2.72 EUR
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IM393S6E3XKLA1 IM393S6E3XKLA1 Infineon Technologies Infineon-IM393-S6E-DS-v02_00-EN.pdf?fileId=5546d462696dbf1201699a9d912478e4 Description: POWER MODULE 600V 6A MDIP30
Packaging: Tube
Package / Case: 35-PowerDIP Module (0.866", 22.00mm), 30 Leads
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase Inverter
Voltage - Isolation: 2000Vrms
Part Status: Obsolete
Current: 6 A
Voltage: 600 V
Produkt ist nicht verfügbar
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CY9AF116MPMC-GNE1 CY9AF116MPMC-GNE1 Infineon Technologies Description: IC MCU 32BIT 512KB FLASH 80LQFP
Packaging: Tray
Package / Case: 80-LQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 12x12b SAR
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, EBI/EMI, I²C, LINbus, SPI, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 80-LQFP (12x12)
Part Status: Active
Number of I/O: 66
Produkt ist nicht verfügbar
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S29GL128S10DHI010 S29GL128S10DHI010 Infineon Technologies Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai Description: IC FLASH 128MBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (9x9)
Part Status: Active
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 8M x 16
DigiKey Programmable: Not Verified
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2+9.15 EUR
10+8.35 EUR
25+8.19 EUR
40+8.13 EUR
80+7.30 EUR
260+7.27 EUR
520+6.82 EUR
1040+6.53 EUR
Mindestbestellmenge: 2
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BSM10GP60BOSA1 Infineon Technologies INFNS12635-1.pdf Description: BSM10GP60 - IGBT MODULE 600V 20A
Packaging: Bulk
Part Status: Active
auf Bestellung 107 Stücke:
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5+101.64 EUR
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CYPD7299-68LDXST Infineon Technologies Description: CCG7D
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IKQ120N120CS7XKSA1 IKQ120N120CS7XKSA1 Infineon Technologies Infineon-IKQ120N120CS7-DataSheet-v01_10-EN.pdf?fileId=8ac78c8c850f4bee0185a59a0dcd7867 Description: IGBT TRENCH FS 1200V 216A TO247
Packaging: Tube
Part Status: Active
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 205 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 120A
Supplier Device Package: PG-TO247-3-46
IGBT Type: Trench Field Stop
Gate Charge: 710 nC
Current - Collector (Ic) (Max): 216 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 360 A
Power - Max: 1004 W
Td (on/off) @ 25°C: 44ns/205ns
Switching Energy: 10.3mJ (on), 5.72mJ (off)
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1+26.93 EUR
30+16.65 EUR
120+14.43 EUR
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IGQ120N120S7XKSA1 IGQ120N120S7XKSA1 Infineon Technologies Infineon-IGQ120N120S7-DataSheet-v01_10-EN.pdf?fileId=8ac78c8c850f4bee0185a59a2e227870 Description: IGBT
Packaging: Tube
Part Status: Active
auf Bestellung 181 Stücke:
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1+22.48 EUR
30+13.73 EUR
120+11.89 EUR
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BTS70082EPZXUMA1 BTS70082EPZXUMA1 Infineon Technologies Infineon-BTS7008-2EPZ-DataSheet-v01_10-EN.pdf?fileId=5546d4626e651a41016e7e74b26b1098 Description: PROFET PG-TSDSO-14
Features: Slew Rate Controlled
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 175°C (TJ)
Output Configuration: High Side
Rds On (Typ): 9mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 18V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 7.5A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TDSO-14-11
Fault Protection: Over Current, Over Temperature, Over Voltage, Short Circuit
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
auf Bestellung 4901 Stücke:
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5+3.78 EUR
10+2.81 EUR
25+2.57 EUR
100+2.30 EUR
250+2.17 EUR
500+2.10 EUR
1000+2.03 EUR
Mindestbestellmenge: 5
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BSZ0804LSATMA1 BSZ0804LSATMA1 Infineon Technologies Infineon-BSZ0804LS-DataSheet-v02_00-EN.pdf?fileId=5546d462700c0ae601708b98c719142a Description: MOSFET N-CH 100V 11A/40A TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 9.6mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 36µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 50 V
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BSZ0804LSATMA1 BSZ0804LSATMA1 Infineon Technologies Infineon-BSZ0804LS-DataSheet-v02_00-EN.pdf?fileId=5546d462700c0ae601708b98c719142a Description: MOSFET N-CH 100V 11A/40A TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 9.6mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 36µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 50 V
Produkt ist nicht verfügbar
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ISZ0804NLSATMA1 ISZ0804NLSATMA1 Infineon Technologies Infineon-ISZ0804NLS-DataSheet-v02_01-EN.pdf?fileId=5546d46278d64ffd0178fd2bc3896d7a Description: MOSFET N-CH 100V 11A/58A TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 58A (Tc)
Rds On (Max) @ Id, Vgs: 11.5mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 60W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 28µA
Supplier Device Package: PG-TSDSON-8-26
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 50 V
Produkt ist nicht verfügbar
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ISZ0804NLSATMA1 ISZ0804NLSATMA1 Infineon Technologies Infineon-ISZ0804NLS-DataSheet-v02_01-EN.pdf?fileId=5546d46278d64ffd0178fd2bc3896d7a Description: MOSFET N-CH 100V 11A/58A TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 58A (Tc)
Rds On (Max) @ Id, Vgs: 11.5mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 60W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 28µA
Supplier Device Package: PG-TSDSON-8-26
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 50 V
Produkt ist nicht verfügbar
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BSZ088N03MSG BSZ088N03MSG Infineon Technologies INFNS16426-1.pdf?t.download=true&u=5oefqw Description: BSZ088N03 - 12V-300V N-CHANNEL P
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 35W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TSDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 15 V
Produkt ist nicht verfügbar
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BSZ0803LSATMA1 BSZ0803LSATMA1 Infineon Technologies Infineon-BSZ0803LS-DataSheet-v02_01-EN.pdf?fileId=5546d462700c0ae601708b98d50c142d Description: MOSFET N-CH 100V 9A/40A TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 14.6mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 23µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 50 V
Produkt ist nicht verfügbar
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BSZ0803LSATMA1 BSZ0803LSATMA1 Infineon Technologies Infineon-BSZ0803LS-DataSheet-v02_01-EN.pdf?fileId=5546d462700c0ae601708b98d50c142d Description: MOSFET N-CH 100V 9A/40A TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 14.6mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 23µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 50 V
Produkt ist nicht verfügbar
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S6SBP202A1FVA1001 S6SBP202A1FVA1001 Infineon Technologies download Description: EVAL BOARD FOR S6BP202A
Packaging: Box
Voltage - Output: 5V
Voltage - Input: 2.5V ~ 42V
Current - Output: 2.4A
Contents: Board(s)
Regulator Topology: Buck-Boost
Board Type: Fully Populated
Utilized IC / Part: S6BP202A
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Up or Down
Outputs and Type: 1 Non-Isolated Output
Part Status: Active
Produkt ist nicht verfügbar
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CY7C1441KV33-133AXI CY7C1441KV33-133AXI Infineon Technologies download Description: IC SRAM 36MBIT PARALLEL 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 133 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Part Status: Active
Memory Interface: Parallel
Access Time: 6.5 ns
Memory Organization: 1M x 36
DigiKey Programmable: Not Verified
auf Bestellung 146 Stücke:
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1+101.08 EUR
10+93.29 EUR
25+90.24 EUR
72+86.79 EUR
144+84.59 EUR
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IRFSL3206PBF IRFSL3206PBF Infineon Technologies irfs3206pbf.pdf?fileId=5546d462533600a401535636671c215a Description: MOSFET N-CH 60V 120A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 75A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 150µA
Supplier Device Package: TO-262
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6540 pF @ 50 V
auf Bestellung 400 Stücke:
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50+3.09 EUR
100+2.92 EUR
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IMBG65R048M1HXTMA1 IMBG65R048M1HXTMA1 Infineon Technologies Infineon-IMBG65R048M1H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7ddc01d7017e49e77323159f Description: SILICON CARBIDE MOSFET PG-TO263-
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 64mOhm @ 20.1A, 18V
Power Dissipation (Max): 183W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 6mA
Supplier Device Package: PG-TO263-7-12
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1118 pF @ 400 V
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IMBG65R048M1HXTMA1 IMBG65R048M1HXTMA1 Infineon Technologies Infineon-IMBG65R048M1H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7ddc01d7017e49e77323159f Description: SILICON CARBIDE MOSFET PG-TO263-
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 64mOhm @ 20.1A, 18V
Power Dissipation (Max): 183W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 6mA
Supplier Device Package: PG-TO263-7-12
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1118 pF @ 400 V
auf Bestellung 15 Stücke:
Lieferzeit 10-14 Tag (e)
2+15.14 EUR
10+10.37 EUR
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IMBG65R057M1HXTMA1 IMBG65R057M1HXTMA1 Infineon Technologies Infineon-IMBG65R057M1H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7ddc01d7017e49e7874715a2 Description: SILICON CARBIDE MOSFET PG-TO263-
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
Rds On (Max) @ Id, Vgs: 74mOhm @ 16.7A, 18V
Power Dissipation (Max): 161W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 5mA
Supplier Device Package: PG-TO263-7-12
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 930 pF @ 400 V
Produkt ist nicht verfügbar
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IMBG65R057M1HXTMA1 IMBG65R057M1HXTMA1 Infineon Technologies Infineon-IMBG65R057M1H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7ddc01d7017e49e7874715a2 Description: SILICON CARBIDE MOSFET PG-TO263-
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
Rds On (Max) @ Id, Vgs: 74mOhm @ 16.7A, 18V
Power Dissipation (Max): 161W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 5mA
Supplier Device Package: PG-TO263-7-12
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 930 pF @ 400 V
Produkt ist nicht verfügbar
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IMBG65R083M1HXTMA1 IMBG65R083M1HXTMA1 Infineon Technologies Infineon-IMBG65R083M1H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7ddc01d7017e49f0a426164d Description: SILICON CARBIDE MOSFET PG-TO263-
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 111mOhm @ 11.2A, 18V
Power Dissipation (Max): 126W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 3.3mA
Supplier Device Package: PG-TO263-7-12
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 624 pF @ 400 V
Produkt ist nicht verfügbar
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IMBG65R083M1HXTMA1 IMBG65R083M1HXTMA1 Infineon Technologies Infineon-IMBG65R083M1H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7ddc01d7017e49f0a426164d Description: SILICON CARBIDE MOSFET PG-TO263-
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 111mOhm @ 11.2A, 18V
Power Dissipation (Max): 126W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 3.3mA
Supplier Device Package: PG-TO263-7-12
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 624 pF @ 400 V
Produkt ist nicht verfügbar
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IMBG65R107M1HXTMA1 IMBG65R107M1HXTMA1 Infineon Technologies Infineon-IMBG65R107M1H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7ddc01d7017e49f0b8bd1650 Description: SILICON CARBIDE MOSFET PG-TO263-
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 141mOhm @ 8.9A, 18V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 2.6mA
Supplier Device Package: PG-TO263-7-12
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 496 pF @ 400 V
Produkt ist nicht verfügbar
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IMBG65R107M1HXTMA1 IMBG65R107M1HXTMA1 Infineon Technologies Infineon-IMBG65R107M1H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7ddc01d7017e49f0b8bd1650 Description: SILICON CARBIDE MOSFET PG-TO263-
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 141mOhm @ 8.9A, 18V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 2.6mA
Supplier Device Package: PG-TO263-7-12
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 496 pF @ 400 V
auf Bestellung 810 Stücke:
Lieferzeit 10-14 Tag (e)
2+10.60 EUR
10+7.13 EUR
100+5.20 EUR
Mindestbestellmenge: 2
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TZ740N22KS01HPSA3 Infineon Technologies Infineon-TZ740N-DS-v03_05-EN.pdf?fileId=db3a304412b407950112b42f88224c15 Description: MOODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: 125°C (TJ)
Structure: Single
Current - Hold (Ih) (Max): 500 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 30000A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 819 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (RMS)) (Max): 1500 A
Voltage - Off State: 2.2 kV
Produkt ist nicht verfügbar
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TLE9261BQXXUMA2 Infineon Technologies Infineon-TLE9261BQX-DataSheet-v01_20-EN.pdf?fileId=5546d462602a9dc8016073c1554f5b04 Description: OPTIREG SYST BASIS CHIPS
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 3V ~ 28V
Applications: System Basis Chip
Current - Supply: 3.5mA
Supplier Device Package: PG-VQFN-48-79
Produkt ist nicht verfügbar
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CY8C4013LQI-411T CY8C4013LQI-411T Infineon Technologies Infineon-PSoC_4_PSoC_4000_Family_Programmable_System-on-Chip_(PSoC)-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecc2b7d45ee&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC MCU 32BIT 8KB FLASH 16QFN
Packaging: Tape & Reel (TR)
Package / Case: 16-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: D/A 1x7b, 1x8b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 16-QFN (3x3)
Part Status: Active
Number of I/O: 12
DigiKey Programmable: Not Verified
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
2500+1.16 EUR
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CY8C4013LQI-411T CY8C4013LQI-411T Infineon Technologies Infineon-PSoC_4_PSoC_4000_Family_Programmable_System-on-Chip_(PSoC)-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecc2b7d45ee&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC MCU 32BIT 8KB FLASH 16QFN
Packaging: Cut Tape (CT)
Package / Case: 16-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: D/A 1x7b, 1x8b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 16-QFN (3x3)
Part Status: Active
Number of I/O: 12
DigiKey Programmable: Not Verified
auf Bestellung 7268 Stücke:
Lieferzeit 10-14 Tag (e)
7+2.60 EUR
10+1.90 EUR
25+1.73 EUR
100+1.54 EUR
250+1.44 EUR
500+1.39 EUR
1000+1.34 EUR
Mindestbestellmenge: 7
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CY8C3244LTI-130 CY8C3244LTI-130 Infineon Technologies Infineon-PSoC_3_CY8C32_Programmable_System-on-Chip-DataSheet-v28_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec7aa5b3f68&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files&redirId=File_1_2_960 Description: IC MCU 8BIT 16KB FLASH 68QFN
Packaging: Tray
Package / Case: 68-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 50MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 512 x 8
Core Processor: 8051
Data Converters: A/D 16x12b; D/A 1x8b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: EBI/EMI, I2C, LINbus, SPI, UART/USART
Peripherals: CapSense, DMA, POR, PWM, WDT
Supplier Device Package: 68-QFN (8x8)
Part Status: Active
Number of I/O: 38
DigiKey Programmable: Not Verified
auf Bestellung 2519 Stücke:
Lieferzeit 10-14 Tag (e)
2+10.23 EUR
10+9.24 EUR
25+8.81 EUR
80+7.65 EUR
260+7.57 EUR
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CY8C3245AXI-158 CY8C3245AXI-158 Infineon Technologies Infineon-PSoC_3_CY8C32_Programmable_System-on-Chip-DataSheet-v28_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec7aa5b3f68&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files&redirId=File_1_2_960 Description: IC MCU 8BIT 32KB FLASH 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 50MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 1K x 8
Core Processor: 8051
Data Converters: A/D 16x12b; D/A 1x8b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: EBI/EMI, I2C, LINbus, SPI, UART/USART
Peripherals: CapSense, DMA, POR, PWM, WDT
Supplier Device Package: 100-TQFP (14x14)
Number of I/O: 62
DigiKey Programmable: Not Verified
auf Bestellung 450 Stücke:
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2+15.77 EUR
10+14.25 EUR
25+13.58 EUR
90+11.79 EUR
270+11.26 EUR
450+10.27 EUR
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CY8C3445LTI-078 CY8C3445LTI-078 Infineon Technologies download Description: IC MCU 8BIT 32KB FLASH 48QFN
Packaging: Tray
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 50MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 1K x 8
Core Processor: 8051
Data Converters: A/D 16x12b; D/A 2x8b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: EBI/EMI, I2C, LINbus, SPI, UART/USART
Peripherals: CapSense, DMA, LCD, POR, PWM, WDT
Supplier Device Package: 48-QFN (7x7)
Part Status: Active
Number of I/O: 25
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IPD079N06L3GATMA1 IPD079N06L3GATMA1 Infineon Technologies Infineon-IPD079N06L3-DS-v02_00-en.pdf?fileId=db3a30431ddc9372011e2b5528634dc0 Description: MOSFET N-CH 60V 50A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 7.9mOhm @ 50A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 34µA
Supplier Device Package: PG-TO252-3-311
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4900 pF @ 30 V
auf Bestellung 2852 Stücke:
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100+1.05 EUR
500+0.83 EUR
1000+0.76 EUR
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IDW30E60AFKSA1 IDW30E60AFKSA1 Infineon Technologies Part_Number_Guide_Web.pdf Description: DIODE GEN PURP 600V 60A TO247-3
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 143 ns
Technology: Standard
Current - Average Rectified (Io): 60A
Supplier Device Package: PG-TO247-3
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 30 A
Current - Reverse Leakage @ Vr: 40 µA @ 600 V
Produkt ist nicht verfügbar
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IDW30E65D1 IDW30E65D1 Infineon Technologies INFNS30296-1.pdf?t.download=true&u=5oefqw Description: DIODE GP 650V 60A TO247-3-1
Produkt ist nicht verfügbar
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S6J336CHSBSV20000 S6J336CHSBSV20000 Infineon Technologies Infineon-S6J3360_Series_S6J3370_Series_32-bit_Arm_Cortex-R5F_TRAVEO_T1G_Microcontroller-AdditionalTechnicalInformation-v12_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee4479d6ae2 Description: IC MCU 32BIT 112KB FLASH 144LQFP
Packaging: Tray
Package / Case: 144-LQFP
Mounting Type: Surface Mount
Speed: 132MHz
Program Memory Size: 112KB (112K x 8)
RAM Size: 128K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: Arm® Cortex®-R5F
Data Converters: A/D 40x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, I2C, LINbus, UART/USART
Peripherals: DMA, I2S, LVD, POR, PWM, WDT
Supplier Device Package: 144-LQFP (20x20)
Part Status: Active
Number of I/O: 94
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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SAF-XE160FU-8F66RAAFXUMA1 SAF-XE160FU-8F66RAAFXUMA1 Infineon Technologies Product_Catalog_2012.pdf?t.download=true&u=5oefqw Description: 16-BIT FLASH RISC MCU
auf Bestellung 4797 Stücke:
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130+3.83 EUR
Mindestbestellmenge: 130
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IPF042N10NF2SATMA1 IPF042N10NF2SATMA1 Infineon Technologies Infineon-IPF042N10NF2S-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c83cd30810183f49616ca62b7 Description: MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 139A (Tc)
Rds On (Max) @ Id, Vgs: 4.25mOhm @ 80A, 10V
Power Dissipation (Max): 3.8W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 93µA
Supplier Device Package: PG-TO263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 50 V
Produkt ist nicht verfügbar
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IPF042N10NF2SATMA1 IPF042N10NF2SATMA1 Infineon Technologies Infineon-IPF042N10NF2S-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c83cd30810183f49616ca62b7 Description: MOSFET
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 139A (Tc)
Rds On (Max) @ Id, Vgs: 4.25mOhm @ 80A, 10V
Power Dissipation (Max): 3.8W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 93µA
Supplier Device Package: PG-TO263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 50 V
auf Bestellung 261 Stücke:
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6+3.38 EUR
10+1.88 EUR
100+1.43 EUR
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CYW20820A1KFBG CYW20820A1KFBG Infineon Technologies Infineon-CYW20820_AIROC_Bluetooth_Bluetooth_LE_system_on_chip-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c8929aa4d0189bd07ff731403 Description: IC RF TXRX+MCU BLE 62FBGA
Packaging: Tray
Package / Case: 62-WFBGA
Sensitivity: -94.5dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 256kB Flash, 176kB RAM, 1MB ROM
Type: TxRx + MCU
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 1.71V ~ 3.3V
Power - Output: 11.5dBm
Protocol: Bluetooth v5.2 + EDR
Current - Receiving: 6.28mA ~ 6.87mA
Data Rate (Max): 3Mbps
Current - Transmitting: 18.58mA ~ 22.48mA
Supplier Device Package: 62-FBGA (4.5x4.5)
GPIO: 22
RF Family/Standard: Bluetooth
Serial Interfaces: ADC, GPIO, I2C, I2S, PCM, SPI, UART
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 4377 Stücke:
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2+9.15 EUR
10+7.07 EUR
25+6.43 EUR
80+5.76 EUR
230+5.27 EUR
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980+4.90 EUR
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D4810N24TVFXPSA1 D4810N24TVFXPSA1 Infineon Technologies D4810N.pdf Description: DIODE GEN PURP 2.4KV 4810A
Packaging: Bulk
Package / Case: DO-200AE
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 4810A
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 2400 V
Voltage - Forward (Vf) (Max) @ If: 1.078 V @ 4000 A
Current - Reverse Leakage @ Vr: 200 mA @ 2400 V
Produkt ist nicht verfügbar
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IRFU3607TRL701P IRFU3607TRL701P Infineon Technologies irfr3607pbf.pdf?fileId=5546d462533600a401535631463620a7 Description: MOSFET N CH 75V 56A IPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 46A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: IPAK (TO-251AA)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3070 pF @ 50 V
Produkt ist nicht verfügbar
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S6E2H14G0AGB30000 S6E2H14G0AGB30000 Infineon Technologies ?utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC MCU 32BIT 288KB FLASH 121FBGA
Packaging: Tray
Package / Case: 121-TFBGA
Mounting Type: Surface Mount
Speed: 160MHz
Program Memory Size: 288KB (288K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 24x12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, EBI/EMI, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 121-FBGA (6x6)
Part Status: Active
Number of I/O: 100
DigiKey Programmable: Not Verified
auf Bestellung 488 Stücke:
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S6E2H14G0AGB3000A S6E2H14G0AGB3000A Infineon Technologies Infineon-S6E2H_Series_32-bit_Arm_Cortex-M4F_FM4_Microcontroller-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed234f14ede Description: IC MCU 32BIT 288KB FLASH 121FBGA
Packaging: Tray
Package / Case: 121-TFBGA
Mounting Type: Surface Mount
Speed: 160MHz
Program Memory Size: 288KB (288K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 125°C (TJ)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 24x12b SAR; D/A 2x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, EBI/EMI, I2C, LINbus, SPI, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 121-FBGA (6x6)
Part Status: Active
Number of I/O: 100
DigiKey Programmable: Not Verified
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1+27.26 EUR
10+21.61 EUR
25+20.20 EUR
80+18.86 EUR
230+17.97 EUR
490+17.47 EUR
980+17.10 EUR
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S6E2H14E0AGV2000M S6E2H14E0AGV2000M Infineon Technologies Infineon-S6E2H_Series_32-bit_Arm_Cortex-M4F_FM4_Microcontroller-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed234f14ede Description: IC MCU 32BIT 288KB FLASH 80LQFP
Packaging: Tray
Package / Case: 80-LQFP
Mounting Type: Surface Mount
Speed: 160MHz
Program Memory Size: 288KB (288K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 125°C (TJ)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 16x12b SAR; D/A 2x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, EBI/EMI, I2C, LINbus, SPI, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 80-LQFP (12x12)
Part Status: Active
Number of I/O: 63
DigiKey Programmable: Not Verified
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S6E2GK6JHAGV2000A S6E2GK6JHAGV2000A Infineon Technologies download Description: IC MCU 32BIT 512KB FLASH 176LQFP
Packaging: Tray
Package / Case: 176-LQFP
Mounting Type: Surface Mount
Speed: 180MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 128K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 32x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, EBI/EMI, I2C, LINbus, SD, SmartCard, SPI, UART/USART, USB
Peripherals: DMA, I2S, LVD, POR, PWM, WDT
Supplier Device Package: 176-LQFP (24x24)
Number of I/O: 153
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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S6E2H46E0AGV20000 S6E2H46E0AGV20000 Infineon Technologies ?utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC MCU 32BIT 544KB FLASH 80LQFP
Packaging: Tray
Package / Case: 80-LQFP
Mounting Type: Surface Mount
Speed: 160MHz
Program Memory Size: 544KB (544K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 16x12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, I²C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 80-LQFP (12x12)
Part Status: Active
Number of I/O: 63
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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S6E2H44E0AGV20000 S6E2H44E0AGV20000 Infineon Technologies ?utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC MCU 32BIT 288KB FLASH 80LQFP
Packaging: Tray
Package / Case: 80-LQFP
Mounting Type: Surface Mount
Speed: 160MHz
Program Memory Size: 288KB (288K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 16x12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 80-LQFP (12x12)
Part Status: Active
Number of I/O: 63
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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S6E2GK8H0AGV2000A S6E2GK8H0AGV2000A Infineon Technologies download Description: IC MCU 32BIT 1MB FLASH 144LQFP
Packaging: Tray
Package / Case: 144-LQFP
Mounting Type: Surface Mount
Speed: 180MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 192K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 24x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, EBI/EMI, I2C, LINbus, SD, SmartCard, SPI, UART/USART, USB
Peripherals: DMA, I2S, LVD, POR, PWM, WDT
Supplier Device Package: 144-LQFP (20x20)
Part Status: Active
Number of I/O: 121
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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S6E2GM8J0AGV2000A S6E2GM8J0AGV2000A Infineon Technologies download Description: IC MCU 32BIT 1MB FLASH 176LQFP
Packaging: Tray
Package / Case: 176-LQFP
Mounting Type: Surface Mount
Speed: 180MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 192K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 32x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, Ethernet, I2C, LINbus, SD, SmartCard, SPI, UART/USART, USB
Peripherals: DMA, I2S, LVD, POR, PWM, WDT
Supplier Device Package: 176-LQFP (24x24)
Part Status: Active
Number of I/O: 153
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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S6E2H44E0AGV2000M S6E2H44E0AGV2000M Infineon Technologies Infineon-S6E2H_Series_32-bit_Arm_Cortex-M4F_FM4_Microcontroller-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed234f14ede Description: IC MCU 32BIT 288KB FLASH 80LQFP
Packaging: Tray
Package / Case: 80-LQFP
Mounting Type: Surface Mount
Speed: 160MHz
Program Memory Size: 288KB (288K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 16x12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 80-LQFP (12x12)
Part Status: Active
Number of I/O: 63
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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S6E2H16G0AGV20000 S6E2H16G0AGV20000 Infineon Technologies ?utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC MCU 32BIT 544KB FLASH 120LQFP
Produkt ist nicht verfügbar
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S6E2H44G0AGB3000A S6E2H44G0AGB3000A Infineon Technologies ?utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC MCU 32BIT 288KB FLASH 121FBGA
Packaging: Tray
Package / Case: 121-TFBGA
Mounting Type: Surface Mount
Speed: 160MHz
Program Memory Size: 288KB (288K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 24x12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 121-FBGA (6x6)
Number of I/O: 100
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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FM0-64L-S6E1C3
FM0-64L-S6E1C3
Hersteller: Infineon Technologies
Description: S6E1C3 EVAL BRD
Packaging: Bulk
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s), Cable(s)
Core Processor: ARM® Cortex®-M0+
Utilized IC / Part: S6E1C3
Produkt ist nicht verfügbar
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MB39C022NPN-G-ERE1 download
MB39C022NPN-G-ERE1
Hersteller: Infineon Technologies
Description: IC REG DL BUCK/LINEAR SYNC 10SON
Packaging: Tape & Reel (TR)
Package / Case: 10-WFDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.5V ~ 5.5V
Frequency - Switching: 2MHz
Topology: Step-Down (Buck) Synchronous (1), Linear (LDO) (1)
Supplier Device Package: 10-SON (3x3)
Voltage/Current - Output 1: 0.8V ~ 4.5V, 600mA
Voltage/Current - Output 2: 1.2V, 300mA
w/LED Driver: No
w/Supervisor: No
w/Sequencer: No
Number of Outputs: 2
Produkt ist nicht verfügbar
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MB39C022NPN-G-ERE1 download
MB39C022NPN-G-ERE1
Hersteller: Infineon Technologies
Description: IC REG DL BUCK/LINEAR SYNC 10SON
Packaging: Cut Tape (CT)
Package / Case: 10-WFDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.5V ~ 5.5V
Frequency - Switching: 2MHz
Topology: Step-Down (Buck) Synchronous (1), Linear (LDO) (1)
Supplier Device Package: 10-SON (3x3)
Voltage/Current - Output 1: 0.8V ~ 4.5V, 600mA
Voltage/Current - Output 2: 1.2V, 300mA
w/LED Driver: No
w/Supervisor: No
w/Sequencer: No
Number of Outputs: 2
auf Bestellung 69 Stücke:
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5+4.21 EUR
10+3.77 EUR
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CYBT-423028-EVAL download
CYBT-423028-EVAL
Hersteller: Infineon Technologies
Description: MODULE KIT
Packaging: Bulk
For Use With/Related Products: CYBT-423028-02
Frequency: 2.4GHz
Type: Transceiver; Bluetooth® 5.x
Supplied Contents: Board(s)
Part Status: Active
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1+76.91 EUR
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BGM7MHLL4L12E6327XTSA1 Part_Number_Guide_Web.pdf
Hersteller: Infineon Technologies
Description: IC RF AMP MMIC 12ATSLP
Packaging: Bulk
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FM25C160B-G Infineon-FM25C160B_16-Kbit_(2_K_8)_Serial_(SPI)_F-RAM-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec906b74172&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
FM25C160B-G
Hersteller: Infineon Technologies
Description: IC FRAM 16KBIT SPI 20MHZ 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 16Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: FRAM (Ferroelectric RAM)
Clock Frequency: 20 MHz
Memory Format: FRAM
Supplier Device Package: 8-SOIC
Part Status: Active
Memory Interface: SPI
Memory Organization: 2K x 8
DigiKey Programmable: Not Verified
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5+3.91 EUR
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IM393S6E3XKLA1 Infineon-IM393-S6E-DS-v02_00-EN.pdf?fileId=5546d462696dbf1201699a9d912478e4
IM393S6E3XKLA1
Hersteller: Infineon Technologies
Description: POWER MODULE 600V 6A MDIP30
Packaging: Tube
Package / Case: 35-PowerDIP Module (0.866", 22.00mm), 30 Leads
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase Inverter
Voltage - Isolation: 2000Vrms
Part Status: Obsolete
Current: 6 A
Voltage: 600 V
Produkt ist nicht verfügbar
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CY9AF116MPMC-GNE1
CY9AF116MPMC-GNE1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 512KB FLASH 80LQFP
Packaging: Tray
Package / Case: 80-LQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 12x12b SAR
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, EBI/EMI, I²C, LINbus, SPI, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 80-LQFP (12x12)
Part Status: Active
Number of I/O: 66
Produkt ist nicht verfügbar
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S29GL128S10DHI010 Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai
S29GL128S10DHI010
Hersteller: Infineon Technologies
Description: IC FLASH 128MBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (9x9)
Part Status: Active
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 8M x 16
DigiKey Programmable: Not Verified
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2+9.15 EUR
10+8.35 EUR
25+8.19 EUR
40+8.13 EUR
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260+7.27 EUR
520+6.82 EUR
1040+6.53 EUR
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BSM10GP60BOSA1 INFNS12635-1.pdf
Hersteller: Infineon Technologies
Description: BSM10GP60 - IGBT MODULE 600V 20A
Packaging: Bulk
Part Status: Active
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5+101.64 EUR
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CYPD7299-68LDXST
Hersteller: Infineon Technologies
Description: CCG7D
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IKQ120N120CS7XKSA1 Infineon-IKQ120N120CS7-DataSheet-v01_10-EN.pdf?fileId=8ac78c8c850f4bee0185a59a0dcd7867
IKQ120N120CS7XKSA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 1200V 216A TO247
Packaging: Tube
Part Status: Active
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 205 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 120A
Supplier Device Package: PG-TO247-3-46
IGBT Type: Trench Field Stop
Gate Charge: 710 nC
Current - Collector (Ic) (Max): 216 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 360 A
Power - Max: 1004 W
Td (on/off) @ 25°C: 44ns/205ns
Switching Energy: 10.3mJ (on), 5.72mJ (off)
auf Bestellung 235 Stücke:
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1+26.93 EUR
30+16.65 EUR
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IGQ120N120S7XKSA1 Infineon-IGQ120N120S7-DataSheet-v01_10-EN.pdf?fileId=8ac78c8c850f4bee0185a59a2e227870
IGQ120N120S7XKSA1
Hersteller: Infineon Technologies
Description: IGBT
Packaging: Tube
Part Status: Active
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1+22.48 EUR
30+13.73 EUR
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BTS70082EPZXUMA1 Infineon-BTS7008-2EPZ-DataSheet-v01_10-EN.pdf?fileId=5546d4626e651a41016e7e74b26b1098
BTS70082EPZXUMA1
Hersteller: Infineon Technologies
Description: PROFET PG-TSDSO-14
Features: Slew Rate Controlled
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 175°C (TJ)
Output Configuration: High Side
Rds On (Typ): 9mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 18V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 7.5A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TDSO-14-11
Fault Protection: Over Current, Over Temperature, Over Voltage, Short Circuit
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
auf Bestellung 4901 Stücke:
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Anzahl Preis
5+3.78 EUR
10+2.81 EUR
25+2.57 EUR
100+2.30 EUR
250+2.17 EUR
500+2.10 EUR
1000+2.03 EUR
Mindestbestellmenge: 5
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BSZ0804LSATMA1 Infineon-BSZ0804LS-DataSheet-v02_00-EN.pdf?fileId=5546d462700c0ae601708b98c719142a
BSZ0804LSATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 11A/40A TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 9.6mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 36µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 50 V
Produkt ist nicht verfügbar
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BSZ0804LSATMA1 Infineon-BSZ0804LS-DataSheet-v02_00-EN.pdf?fileId=5546d462700c0ae601708b98c719142a
BSZ0804LSATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 11A/40A TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 9.6mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 36µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 50 V
Produkt ist nicht verfügbar
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ISZ0804NLSATMA1 Infineon-ISZ0804NLS-DataSheet-v02_01-EN.pdf?fileId=5546d46278d64ffd0178fd2bc3896d7a
ISZ0804NLSATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 11A/58A TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 58A (Tc)
Rds On (Max) @ Id, Vgs: 11.5mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 60W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 28µA
Supplier Device Package: PG-TSDSON-8-26
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 50 V
Produkt ist nicht verfügbar
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ISZ0804NLSATMA1 Infineon-ISZ0804NLS-DataSheet-v02_01-EN.pdf?fileId=5546d46278d64ffd0178fd2bc3896d7a
ISZ0804NLSATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 11A/58A TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 58A (Tc)
Rds On (Max) @ Id, Vgs: 11.5mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 60W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 28µA
Supplier Device Package: PG-TSDSON-8-26
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 50 V
Produkt ist nicht verfügbar
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BSZ088N03MSG INFNS16426-1.pdf?t.download=true&u=5oefqw
BSZ088N03MSG
Hersteller: Infineon Technologies
Description: BSZ088N03 - 12V-300V N-CHANNEL P
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 35W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TSDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 15 V
Produkt ist nicht verfügbar
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BSZ0803LSATMA1 Infineon-BSZ0803LS-DataSheet-v02_01-EN.pdf?fileId=5546d462700c0ae601708b98d50c142d
BSZ0803LSATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 9A/40A TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 14.6mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 23µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 50 V
Produkt ist nicht verfügbar
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BSZ0803LSATMA1 Infineon-BSZ0803LS-DataSheet-v02_01-EN.pdf?fileId=5546d462700c0ae601708b98d50c142d
BSZ0803LSATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 9A/40A TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 14.6mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 23µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 50 V
Produkt ist nicht verfügbar
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S6SBP202A1FVA1001 download
S6SBP202A1FVA1001
Hersteller: Infineon Technologies
Description: EVAL BOARD FOR S6BP202A
Packaging: Box
Voltage - Output: 5V
Voltage - Input: 2.5V ~ 42V
Current - Output: 2.4A
Contents: Board(s)
Regulator Topology: Buck-Boost
Board Type: Fully Populated
Utilized IC / Part: S6BP202A
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Up or Down
Outputs and Type: 1 Non-Isolated Output
Part Status: Active
Produkt ist nicht verfügbar
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CY7C1441KV33-133AXI download
CY7C1441KV33-133AXI
Hersteller: Infineon Technologies
Description: IC SRAM 36MBIT PARALLEL 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 133 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Part Status: Active
Memory Interface: Parallel
Access Time: 6.5 ns
Memory Organization: 1M x 36
DigiKey Programmable: Not Verified
auf Bestellung 146 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+101.08 EUR
10+93.29 EUR
25+90.24 EUR
72+86.79 EUR
144+84.59 EUR
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IRFSL3206PBF irfs3206pbf.pdf?fileId=5546d462533600a401535636671c215a
IRFSL3206PBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 120A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 75A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 150µA
Supplier Device Package: TO-262
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6540 pF @ 50 V
auf Bestellung 400 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.84 EUR
50+3.09 EUR
100+2.92 EUR
Mindestbestellmenge: 4
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IMBG65R048M1HXTMA1 Infineon-IMBG65R048M1H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7ddc01d7017e49e77323159f
IMBG65R048M1HXTMA1
Hersteller: Infineon Technologies
Description: SILICON CARBIDE MOSFET PG-TO263-
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 64mOhm @ 20.1A, 18V
Power Dissipation (Max): 183W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 6mA
Supplier Device Package: PG-TO263-7-12
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1118 pF @ 400 V
Produkt ist nicht verfügbar
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IMBG65R048M1HXTMA1 Infineon-IMBG65R048M1H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7ddc01d7017e49e77323159f
IMBG65R048M1HXTMA1
Hersteller: Infineon Technologies
Description: SILICON CARBIDE MOSFET PG-TO263-
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 64mOhm @ 20.1A, 18V
Power Dissipation (Max): 183W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 6mA
Supplier Device Package: PG-TO263-7-12
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1118 pF @ 400 V
auf Bestellung 15 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+15.14 EUR
10+10.37 EUR
Mindestbestellmenge: 2
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IMBG65R057M1HXTMA1 Infineon-IMBG65R057M1H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7ddc01d7017e49e7874715a2
IMBG65R057M1HXTMA1
Hersteller: Infineon Technologies
Description: SILICON CARBIDE MOSFET PG-TO263-
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
Rds On (Max) @ Id, Vgs: 74mOhm @ 16.7A, 18V
Power Dissipation (Max): 161W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 5mA
Supplier Device Package: PG-TO263-7-12
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 930 pF @ 400 V
Produkt ist nicht verfügbar
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IMBG65R057M1HXTMA1 Infineon-IMBG65R057M1H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7ddc01d7017e49e7874715a2
IMBG65R057M1HXTMA1
Hersteller: Infineon Technologies
Description: SILICON CARBIDE MOSFET PG-TO263-
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
Rds On (Max) @ Id, Vgs: 74mOhm @ 16.7A, 18V
Power Dissipation (Max): 161W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 5mA
Supplier Device Package: PG-TO263-7-12
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 930 pF @ 400 V
Produkt ist nicht verfügbar
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IMBG65R083M1HXTMA1 Infineon-IMBG65R083M1H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7ddc01d7017e49f0a426164d
IMBG65R083M1HXTMA1
Hersteller: Infineon Technologies
Description: SILICON CARBIDE MOSFET PG-TO263-
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 111mOhm @ 11.2A, 18V
Power Dissipation (Max): 126W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 3.3mA
Supplier Device Package: PG-TO263-7-12
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 624 pF @ 400 V
Produkt ist nicht verfügbar
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IMBG65R083M1HXTMA1 Infineon-IMBG65R083M1H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7ddc01d7017e49f0a426164d
IMBG65R083M1HXTMA1
Hersteller: Infineon Technologies
Description: SILICON CARBIDE MOSFET PG-TO263-
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 111mOhm @ 11.2A, 18V
Power Dissipation (Max): 126W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 3.3mA
Supplier Device Package: PG-TO263-7-12
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 624 pF @ 400 V
Produkt ist nicht verfügbar
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IMBG65R107M1HXTMA1 Infineon-IMBG65R107M1H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7ddc01d7017e49f0b8bd1650
IMBG65R107M1HXTMA1
Hersteller: Infineon Technologies
Description: SILICON CARBIDE MOSFET PG-TO263-
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 141mOhm @ 8.9A, 18V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 2.6mA
Supplier Device Package: PG-TO263-7-12
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 496 pF @ 400 V
Produkt ist nicht verfügbar
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IMBG65R107M1HXTMA1 Infineon-IMBG65R107M1H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7ddc01d7017e49f0b8bd1650
IMBG65R107M1HXTMA1
Hersteller: Infineon Technologies
Description: SILICON CARBIDE MOSFET PG-TO263-
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 141mOhm @ 8.9A, 18V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 2.6mA
Supplier Device Package: PG-TO263-7-12
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 496 pF @ 400 V
auf Bestellung 810 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+10.60 EUR
10+7.13 EUR
100+5.20 EUR
Mindestbestellmenge: 2
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TZ740N22KS01HPSA3 Infineon-TZ740N-DS-v03_05-EN.pdf?fileId=db3a304412b407950112b42f88224c15
Hersteller: Infineon Technologies
Description: MOODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: 125°C (TJ)
Structure: Single
Current - Hold (Ih) (Max): 500 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 30000A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 819 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (RMS)) (Max): 1500 A
Voltage - Off State: 2.2 kV
Produkt ist nicht verfügbar
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TLE9261BQXXUMA2 Infineon-TLE9261BQX-DataSheet-v01_20-EN.pdf?fileId=5546d462602a9dc8016073c1554f5b04
Hersteller: Infineon Technologies
Description: OPTIREG SYST BASIS CHIPS
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 3V ~ 28V
Applications: System Basis Chip
Current - Supply: 3.5mA
Supplier Device Package: PG-VQFN-48-79
Produkt ist nicht verfügbar
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CY8C4013LQI-411T Infineon-PSoC_4_PSoC_4000_Family_Programmable_System-on-Chip_(PSoC)-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecc2b7d45ee&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY8C4013LQI-411T
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 8KB FLASH 16QFN
Packaging: Tape & Reel (TR)
Package / Case: 16-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: D/A 1x7b, 1x8b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 16-QFN (3x3)
Part Status: Active
Number of I/O: 12
DigiKey Programmable: Not Verified
auf Bestellung 5000 Stücke:
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Anzahl Preis
2500+1.16 EUR
Mindestbestellmenge: 2500
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CY8C4013LQI-411T Infineon-PSoC_4_PSoC_4000_Family_Programmable_System-on-Chip_(PSoC)-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecc2b7d45ee&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY8C4013LQI-411T
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 8KB FLASH 16QFN
Packaging: Cut Tape (CT)
Package / Case: 16-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: D/A 1x7b, 1x8b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 16-QFN (3x3)
Part Status: Active
Number of I/O: 12
DigiKey Programmable: Not Verified
auf Bestellung 7268 Stücke:
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Anzahl Preis
7+2.60 EUR
10+1.90 EUR
25+1.73 EUR
100+1.54 EUR
250+1.44 EUR
500+1.39 EUR
1000+1.34 EUR
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CY8C3244LTI-130 Infineon-PSoC_3_CY8C32_Programmable_System-on-Chip-DataSheet-v28_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec7aa5b3f68&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files&redirId=File_1_2_960
CY8C3244LTI-130
Hersteller: Infineon Technologies
Description: IC MCU 8BIT 16KB FLASH 68QFN
Packaging: Tray
Package / Case: 68-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 50MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 512 x 8
Core Processor: 8051
Data Converters: A/D 16x12b; D/A 1x8b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: EBI/EMI, I2C, LINbus, SPI, UART/USART
Peripherals: CapSense, DMA, POR, PWM, WDT
Supplier Device Package: 68-QFN (8x8)
Part Status: Active
Number of I/O: 38
DigiKey Programmable: Not Verified
auf Bestellung 2519 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+10.23 EUR
10+9.24 EUR
25+8.81 EUR
80+7.65 EUR
260+7.57 EUR
Mindestbestellmenge: 2
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CY8C3245AXI-158 Infineon-PSoC_3_CY8C32_Programmable_System-on-Chip-DataSheet-v28_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec7aa5b3f68&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files&redirId=File_1_2_960
CY8C3245AXI-158
Hersteller: Infineon Technologies
Description: IC MCU 8BIT 32KB FLASH 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 50MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 1K x 8
Core Processor: 8051
Data Converters: A/D 16x12b; D/A 1x8b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: EBI/EMI, I2C, LINbus, SPI, UART/USART
Peripherals: CapSense, DMA, POR, PWM, WDT
Supplier Device Package: 100-TQFP (14x14)
Number of I/O: 62
DigiKey Programmable: Not Verified
auf Bestellung 450 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+15.77 EUR
10+14.25 EUR
25+13.58 EUR
90+11.79 EUR
270+11.26 EUR
450+10.27 EUR
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CY8C3445LTI-078 download
CY8C3445LTI-078
Hersteller: Infineon Technologies
Description: IC MCU 8BIT 32KB FLASH 48QFN
Packaging: Tray
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 50MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 1K x 8
Core Processor: 8051
Data Converters: A/D 16x12b; D/A 2x8b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: EBI/EMI, I2C, LINbus, SPI, UART/USART
Peripherals: CapSense, DMA, LCD, POR, PWM, WDT
Supplier Device Package: 48-QFN (7x7)
Part Status: Active
Number of I/O: 25
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IPD079N06L3GATMA1 Infineon-IPD079N06L3-DS-v02_00-en.pdf?fileId=db3a30431ddc9372011e2b5528634dc0
IPD079N06L3GATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 50A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 7.9mOhm @ 50A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 34µA
Supplier Device Package: PG-TO252-3-311
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4900 pF @ 30 V
auf Bestellung 2852 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.50 EUR
12+1.58 EUR
100+1.05 EUR
500+0.83 EUR
1000+0.76 EUR
Mindestbestellmenge: 8
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IDW30E60AFKSA1 Part_Number_Guide_Web.pdf
IDW30E60AFKSA1
Hersteller: Infineon Technologies
Description: DIODE GEN PURP 600V 60A TO247-3
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 143 ns
Technology: Standard
Current - Average Rectified (Io): 60A
Supplier Device Package: PG-TO247-3
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 30 A
Current - Reverse Leakage @ Vr: 40 µA @ 600 V
Produkt ist nicht verfügbar
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IDW30E65D1 INFNS30296-1.pdf?t.download=true&u=5oefqw
IDW30E65D1
Hersteller: Infineon Technologies
Description: DIODE GP 650V 60A TO247-3-1
Produkt ist nicht verfügbar
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S6J336CHSBSV20000 Infineon-S6J3360_Series_S6J3370_Series_32-bit_Arm_Cortex-R5F_TRAVEO_T1G_Microcontroller-AdditionalTechnicalInformation-v12_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee4479d6ae2
S6J336CHSBSV20000
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 112KB FLASH 144LQFP
Packaging: Tray
Package / Case: 144-LQFP
Mounting Type: Surface Mount
Speed: 132MHz
Program Memory Size: 112KB (112K x 8)
RAM Size: 128K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: Arm® Cortex®-R5F
Data Converters: A/D 40x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, I2C, LINbus, UART/USART
Peripherals: DMA, I2S, LVD, POR, PWM, WDT
Supplier Device Package: 144-LQFP (20x20)
Part Status: Active
Number of I/O: 94
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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SAF-XE160FU-8F66RAAFXUMA1 Product_Catalog_2012.pdf?t.download=true&u=5oefqw
SAF-XE160FU-8F66RAAFXUMA1
Hersteller: Infineon Technologies
Description: 16-BIT FLASH RISC MCU
auf Bestellung 4797 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
130+3.83 EUR
Mindestbestellmenge: 130
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IPF042N10NF2SATMA1 Infineon-IPF042N10NF2S-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c83cd30810183f49616ca62b7
IPF042N10NF2SATMA1
Hersteller: Infineon Technologies
Description: MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 139A (Tc)
Rds On (Max) @ Id, Vgs: 4.25mOhm @ 80A, 10V
Power Dissipation (Max): 3.8W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 93µA
Supplier Device Package: PG-TO263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 50 V
Produkt ist nicht verfügbar
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IPF042N10NF2SATMA1 Infineon-IPF042N10NF2S-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c83cd30810183f49616ca62b7
IPF042N10NF2SATMA1
Hersteller: Infineon Technologies
Description: MOSFET
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 139A (Tc)
Rds On (Max) @ Id, Vgs: 4.25mOhm @ 80A, 10V
Power Dissipation (Max): 3.8W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 93µA
Supplier Device Package: PG-TO263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 50 V
auf Bestellung 261 Stücke:
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Anzahl Preis
6+3.38 EUR
10+1.88 EUR
100+1.43 EUR
Mindestbestellmenge: 6
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CYW20820A1KFBG Infineon-CYW20820_AIROC_Bluetooth_Bluetooth_LE_system_on_chip-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c8929aa4d0189bd07ff731403
CYW20820A1KFBG
Hersteller: Infineon Technologies
Description: IC RF TXRX+MCU BLE 62FBGA
Packaging: Tray
Package / Case: 62-WFBGA
Sensitivity: -94.5dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 256kB Flash, 176kB RAM, 1MB ROM
Type: TxRx + MCU
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 1.71V ~ 3.3V
Power - Output: 11.5dBm
Protocol: Bluetooth v5.2 + EDR
Current - Receiving: 6.28mA ~ 6.87mA
Data Rate (Max): 3Mbps
Current - Transmitting: 18.58mA ~ 22.48mA
Supplier Device Package: 62-FBGA (4.5x4.5)
GPIO: 22
RF Family/Standard: Bluetooth
Serial Interfaces: ADC, GPIO, I2C, I2S, PCM, SPI, UART
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 4377 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+9.15 EUR
10+7.07 EUR
25+6.43 EUR
80+5.76 EUR
230+5.27 EUR
490+4.97 EUR
980+4.90 EUR
Mindestbestellmenge: 2
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D4810N24TVFXPSA1 D4810N.pdf
D4810N24TVFXPSA1
Hersteller: Infineon Technologies
Description: DIODE GEN PURP 2.4KV 4810A
Packaging: Bulk
Package / Case: DO-200AE
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 4810A
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 2400 V
Voltage - Forward (Vf) (Max) @ If: 1.078 V @ 4000 A
Current - Reverse Leakage @ Vr: 200 mA @ 2400 V
Produkt ist nicht verfügbar
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IRFU3607TRL701P irfr3607pbf.pdf?fileId=5546d462533600a401535631463620a7
IRFU3607TRL701P
Hersteller: Infineon Technologies
Description: MOSFET N CH 75V 56A IPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 46A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: IPAK (TO-251AA)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3070 pF @ 50 V
Produkt ist nicht verfügbar
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S6E2H14G0AGB30000 ?utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
S6E2H14G0AGB30000
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 288KB FLASH 121FBGA
Packaging: Tray
Package / Case: 121-TFBGA
Mounting Type: Surface Mount
Speed: 160MHz
Program Memory Size: 288KB (288K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 24x12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, EBI/EMI, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 121-FBGA (6x6)
Part Status: Active
Number of I/O: 100
DigiKey Programmable: Not Verified
auf Bestellung 488 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+15.73 EUR
10+12.25 EUR
25+11.37 EUR
80+10.55 EUR
230+10.00 EUR
440+9.73 EUR
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S6E2H14G0AGB3000A Infineon-S6E2H_Series_32-bit_Arm_Cortex-M4F_FM4_Microcontroller-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed234f14ede
S6E2H14G0AGB3000A
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 288KB FLASH 121FBGA
Packaging: Tray
Package / Case: 121-TFBGA
Mounting Type: Surface Mount
Speed: 160MHz
Program Memory Size: 288KB (288K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 125°C (TJ)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 24x12b SAR; D/A 2x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, EBI/EMI, I2C, LINbus, SPI, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 121-FBGA (6x6)
Part Status: Active
Number of I/O: 100
DigiKey Programmable: Not Verified
auf Bestellung 4900 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+27.26 EUR
10+21.61 EUR
25+20.20 EUR
80+18.86 EUR
230+17.97 EUR
490+17.47 EUR
980+17.10 EUR
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S6E2H14E0AGV2000M Infineon-S6E2H_Series_32-bit_Arm_Cortex-M4F_FM4_Microcontroller-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed234f14ede
S6E2H14E0AGV2000M
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 288KB FLASH 80LQFP
Packaging: Tray
Package / Case: 80-LQFP
Mounting Type: Surface Mount
Speed: 160MHz
Program Memory Size: 288KB (288K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 125°C (TJ)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 16x12b SAR; D/A 2x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, EBI/EMI, I2C, LINbus, SPI, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 80-LQFP (12x12)
Part Status: Active
Number of I/O: 63
DigiKey Programmable: Not Verified
auf Bestellung 1190 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+14.85 EUR
10+11.54 EUR
25+10.71 EUR
119+9.71 EUR
238+9.39 EUR
476+9.12 EUR
952+8.90 EUR
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S6E2GK6JHAGV2000A download
S6E2GK6JHAGV2000A
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 512KB FLASH 176LQFP
Packaging: Tray
Package / Case: 176-LQFP
Mounting Type: Surface Mount
Speed: 180MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 128K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 32x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, EBI/EMI, I2C, LINbus, SD, SmartCard, SPI, UART/USART, USB
Peripherals: DMA, I2S, LVD, POR, PWM, WDT
Supplier Device Package: 176-LQFP (24x24)
Number of I/O: 153
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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S6E2H46E0AGV20000 ?utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
S6E2H46E0AGV20000
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 544KB FLASH 80LQFP
Packaging: Tray
Package / Case: 80-LQFP
Mounting Type: Surface Mount
Speed: 160MHz
Program Memory Size: 544KB (544K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 16x12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, I²C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 80-LQFP (12x12)
Part Status: Active
Number of I/O: 63
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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S6E2H44E0AGV20000 ?utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
S6E2H44E0AGV20000
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 288KB FLASH 80LQFP
Packaging: Tray
Package / Case: 80-LQFP
Mounting Type: Surface Mount
Speed: 160MHz
Program Memory Size: 288KB (288K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 16x12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 80-LQFP (12x12)
Part Status: Active
Number of I/O: 63
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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S6E2GK8H0AGV2000A download
S6E2GK8H0AGV2000A
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 1MB FLASH 144LQFP
Packaging: Tray
Package / Case: 144-LQFP
Mounting Type: Surface Mount
Speed: 180MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 192K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 24x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, EBI/EMI, I2C, LINbus, SD, SmartCard, SPI, UART/USART, USB
Peripherals: DMA, I2S, LVD, POR, PWM, WDT
Supplier Device Package: 144-LQFP (20x20)
Part Status: Active
Number of I/O: 121
DigiKey Programmable: Not Verified
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S6E2GM8J0AGV2000A download
S6E2GM8J0AGV2000A
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 1MB FLASH 176LQFP
Packaging: Tray
Package / Case: 176-LQFP
Mounting Type: Surface Mount
Speed: 180MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 192K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 32x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, Ethernet, I2C, LINbus, SD, SmartCard, SPI, UART/USART, USB
Peripherals: DMA, I2S, LVD, POR, PWM, WDT
Supplier Device Package: 176-LQFP (24x24)
Part Status: Active
Number of I/O: 153
DigiKey Programmable: Not Verified
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S6E2H44E0AGV2000M Infineon-S6E2H_Series_32-bit_Arm_Cortex-M4F_FM4_Microcontroller-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed234f14ede
S6E2H44E0AGV2000M
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 288KB FLASH 80LQFP
Packaging: Tray
Package / Case: 80-LQFP
Mounting Type: Surface Mount
Speed: 160MHz
Program Memory Size: 288KB (288K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 16x12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 80-LQFP (12x12)
Part Status: Active
Number of I/O: 63
DigiKey Programmable: Not Verified
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S6E2H16G0AGV20000 ?utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
S6E2H16G0AGV20000
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 544KB FLASH 120LQFP
Produkt ist nicht verfügbar
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S6E2H44G0AGB3000A ?utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
S6E2H44G0AGB3000A
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 288KB FLASH 121FBGA
Packaging: Tray
Package / Case: 121-TFBGA
Mounting Type: Surface Mount
Speed: 160MHz
Program Memory Size: 288KB (288K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 24x12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 121-FBGA (6x6)
Number of I/O: 100
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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