Produkte > INFINEON TECHNOLOGIES > Alle Produkte des Herstellers INFINEON TECHNOLOGIES (121482) > Seite 527 nach 2025
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
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IRFS4410ZPBF | Infineon Technologies |
Description: MOSFET N-CH 100V 97A D2PAKInput Capacitance (Ciss) (Max) @ Vds: 4820 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Discontinued at Digi-Key Supplier Device Package: D2PAK Vgs(th) (Max) @ Id: 4V @ 150µA Power Dissipation (Max): 230W (Tc) Rds On (Max) @ Id, Vgs: 9mOhm @ 58A, 10V Current - Continuous Drain (Id) @ 25°C: 97A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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S25FL128SAGMFIG11 | Infineon Technologies |
Description: IC FLASH 128MBIT SPI/QUAD 16SOIC |
auf Bestellung 826 Stücke: Lieferzeit 10-14 Tag (e) |
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CY2313ANZSXC-1 | Infineon Technologies |
Description: IC CLK BUFF 13OUT SDRAM 28SOICDigiKey Programmable: Not Verified Number of Circuits: 1 Part Status: Obsolete PLL: No Supplier Device Package: 28-SOIC Differential - Input:Output: No/No Ratio - Input:Output: 1:13 Main Purpose: Memory, SDRAM DIMM Voltage - Supply: 3.135V ~ 3.465V Operating Temperature: 0°C ~ 70°C Input: Clock Frequency - Max: 100MHz Output: Clock Mounting Type: Surface Mount Package / Case: 28-SOIC (0.295", 7.50mm Width) Packaging: Tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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IPB011N04NF2SATMA1 | Infineon Technologies |
Description: TRENCH <= 40VPackaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 43A (Ta), 201A (Tc) Rds On (Max) @ Id, Vgs: 1.15mOhm @ 100A, 10V Power Dissipation (Max): 3.8W (Ta), 375W (Tc) Vgs(th) (Max) @ Id: 3.4V @ 249µA Supplier Device Package: PG-TO263-3 Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 315 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 15000 pF @ 20 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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IPB011N04NF2SATMA1 | Infineon Technologies |
Description: TRENCH <= 40VPackaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 43A (Ta), 201A (Tc) Rds On (Max) @ Id, Vgs: 1.15mOhm @ 100A, 10V Power Dissipation (Max): 3.8W (Ta), 375W (Tc) Vgs(th) (Max) @ Id: 3.4V @ 249µA Supplier Device Package: PG-TO263-3 Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 315 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 15000 pF @ 20 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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CY9AFB42NBBGL-GK9E1 | Infineon Technologies |
Description: IC MCU 32BIT 160KB FLASH 112BGAPackaging: Tray Package / Case: 112-LFBGA Mounting Type: Surface Mount Speed: 40MHz Program Memory Size: 160KB (160K x 8) RAM Size: 16K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M3 Data Converters: A/D 24x12b Core Size: 32-Bit Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V Connectivity: CSIO, EBI/EMI, I2C, UART/USART, USB Peripherals: DMA, LCD, LVD, POR, PWM, WDT Supplier Device Package: 112-PFBGA (10x10) Part Status: Active Number of I/O: 83 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1980 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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S25FL256SAGNFE001 | Infineon Technologies |
Description: IC FLASH 256MBIT SPI/QUAD 8WSONPackaging: Tube Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 256Mbit Memory Type: Non-Volatile Operating Temperature: -55°C ~ 125°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-WSON (6x8) Part Status: Active Write Cycle Time - Word, Page: 750µs Memory Interface: SPI - Quad I/O Access Time: 6.5 ns Memory Organization: 32M x 8 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 820 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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F3L100R07W2H3B11BPSA1 | Infineon Technologies |
Description: IGBT MODULE 650V 70A AG-EASY2BInput Capacitance (Cies) @ Vce: 6.2 nF @ 650 V Current - Collector Cutoff (Max): 32 µA Power - Max: 20 mW Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector (Ic) (Max): 70 A Part Status: Active IGBT Type: Trench Field Stop Configuration: Three Level Inverter Input: Standard Mounting Type: Chassis Mount Package / Case: Module Packaging: Tray Supplier Device Package: AG-EASY2B NTC Thermistor: Yes Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 100A Operating Temperature: -40°C ~ 150°C (TJ) |
auf Bestellung 1 Stücke: Lieferzeit 10-14 Tag (e) |
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PEB3342HTV22XP | Infineon Technologies | Description: TELEPHONY INTERFACE CIRCUIT |
auf Bestellung 300 Stücke: Lieferzeit 10-14 Tag (e) |
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CY37064P100-125AXC | Infineon Technologies |
Description: IC CPLD 64MC 10NS 100TQFPDigiKey Programmable: Verified Number of I/O: 69 Part Status: Obsolete Voltage Supply - Internal: 4.75V ~ 5.25V Supplier Device Package: 100-TQFP (14x14) Delay Time tpd(1) Max: 10 ns Operating Temperature: 0°C ~ 70°C (TA) Number of Macrocells: 64 Programmable Type: In-System Reprogrammable™ (ISR™) CMOS Mounting Type: Surface Mount Package / Case: 100-LQFP Packaging: Tray |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 90 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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CY37064P100-125AC | Infineon Technologies |
Description: IC CPLD 64MC 10NS 100TQFPDigiKey Programmable: Not Verified Number of I/O: 69 Part Status: Obsolete Voltage Supply - Internal: 4.75V ~ 5.25V Supplier Device Package: 100-TQFP (14x14) Delay Time tpd(1) Max: 10 ns Operating Temperature: 0°C ~ 70°C (TA) Number of Macrocells: 64 Programmable Type: In-System Reprogrammable™ (ISR™) CMOS Mounting Type: Surface Mount Package / Case: 100-LQFP Packaging: Bag |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 450 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| BSM75GB120DN2HOSA1 | Infineon Technologies |
Description: MEDIUM POWER 34MM |
auf Bestellung 74 Stücke: Lieferzeit 10-14 Tag (e) |
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BG 3230 E6327 | Infineon Technologies |
Description: MOSFET N-CH DUAL 8V SOT-363 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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FM28V100-TGTR | Infineon Technologies |
Description: IC FRAM 1MBIT PARALLEL 32TSOP IDigiKey Programmable: Not Verified Memory Organization: 128K x 8 Access Time: 90 ns Memory Interface: Parallel Write Cycle Time - Word, Page: 90ns Part Status: Active Supplier Device Package: 32-TSOP I Memory Format: FRAM Technology: FRAM (Ferroelectric RAM) Voltage - Supply: 2V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Memory Type: Non-Volatile Memory Size: 1Mbit Mounting Type: Surface Mount Package / Case: 32-TFSOP (0.465", 11.80mm Width) Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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FM28V100-TGTR | Infineon Technologies |
Description: IC FRAM 1MBIT PARALLEL 32TSOP IPackaging: Cut Tape (CT) Package / Case: 32-TFSOP (0.465", 11.80mm Width) Mounting Type: Surface Mount Memory Size: 1Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2V ~ 3.6V Technology: FRAM (Ferroelectric RAM) Memory Format: FRAM Supplier Device Package: 32-TSOP I Part Status: Active Write Cycle Time - Word, Page: 90ns Memory Interface: Parallel Access Time: 90 ns Memory Organization: 128K x 8 DigiKey Programmable: Not Verified |
auf Bestellung 501 Stücke: Lieferzeit 10-14 Tag (e) |
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FM28V100-TG | Infineon Technologies |
Description: IC FRAM 1MBIT PARALLEL 32TSOP IPackaging: Tray Package / Case: 32-TFSOP (0.465", 11.80mm Width) Mounting Type: Surface Mount Memory Size: 1Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2V ~ 3.6V Technology: FRAM (Ferroelectric RAM) Memory Format: FRAM Supplier Device Package: 32-TSOP I Part Status: Active Write Cycle Time - Word, Page: 90ns Memory Interface: Parallel Access Time: 90 ns Memory Organization: 128K x 8 DigiKey Programmable: Not Verified |
auf Bestellung 443 Stücke: Lieferzeit 10-14 Tag (e) |
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FM28V102A-TG | Infineon Technologies |
Description: IC FRAM 1MBIT PARALLEL 44TSOP IIPackaging: Tray Package / Case: 44-TSOP (0.400", 10.16mm Width) Mounting Type: Surface Mount Memory Size: 1Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2V ~ 3.6V Technology: FRAM (Ferroelectric RAM) Memory Format: FRAM Supplier Device Package: 44-TSOP II Part Status: Active Write Cycle Time - Word, Page: 90ns Memory Interface: Parallel Access Time: 90 ns Memory Organization: 64K x 16 DigiKey Programmable: Not Verified |
auf Bestellung 19 Stücke: Lieferzeit 10-14 Tag (e) |
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FM28V020-T28GTR | Infineon Technologies |
Description: IC FRAM 256KBIT PAR 28TSOP ITechnology: FRAM (Ferroelectric RAM) Voltage - Supply: 2V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Memory Type: Non-Volatile Memory Size: 256Kbit Mounting Type: Surface Mount Package / Case: 28-TSSOP (0.465", 11.80mm Width) Packaging: Tape & Reel (TR) DigiKey Programmable: Not Verified Memory Organization: 32K x 8 Access Time: 140 ns Memory Interface: Parallel Write Cycle Time - Word, Page: 140ns Supplier Device Package: 28-TSOP I Memory Format: FRAM |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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CY7C1019D-10VXI | Infineon Technologies |
Description: IC SRAM 1MBIT PARALLEL 32SOJDigiKey Programmable: Not Verified Memory Organization: 128K x 8 Access Time: 10 ns Memory Interface: Parallel Write Cycle Time - Word, Page: 10ns Supplier Device Package: 32-SOJ Memory Format: SRAM Technology: SRAM - Asynchronous Voltage - Supply: 4.5V ~ 5.5V Operating Temperature: -40°C ~ 85°C (TA) Memory Type: Volatile Memory Size: 1Mbit Mounting Type: Surface Mount Package / Case: 32-BSOJ (0.400", 10.16mm Width) Packaging: Tube |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1150 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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CY7C1019DV33-10VXI | Infineon Technologies |
Description: IC SRAM 1MBIT PARALLEL 32SOJDigiKey Programmable: Not Verified Memory Organization: 128K x 8 Access Time: 10 ns Memory Interface: Parallel Write Cycle Time - Word, Page: 10ns Supplier Device Package: 32-SOJ Memory Format: SRAM Technology: SRAM - Asynchronous Voltage - Supply: 3V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Memory Type: Volatile Memory Size: 1Mbit Mounting Type: Surface Mount Package / Case: 32-BSOJ (0.400", 10.16mm Width) Packaging: Tube |
auf Bestellung 342 Stücke: Lieferzeit 10-14 Tag (e) |
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S29GL512S11TFIV10 | Infineon Technologies |
Description: IC FLASH 512MBIT PARALLEL 56TSOPDigiKey Programmable: Not Verified Memory Organization: 32M x 16 Access Time: 110 ns Memory Interface: Parallel Write Cycle Time - Word, Page: 60ns Part Status: Active Supplier Device Package: 56-TSOP Memory Format: FLASH Technology: FLASH - NOR Voltage - Supply: 1.65V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Memory Type: Non-Volatile Memory Size: 512Mbit Mounting Type: Surface Mount Package / Case: 56-TFSOP (0.724", 18.40mm Width) Packaging: Bulk |
auf Bestellung 330 Stücke: Lieferzeit 10-14 Tag (e) |
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| CY91F523JSEPMC-GTE1 | Infineon Technologies |
Description: IC MCU 32BIT 448KB FLASH 120LQFP DigiKey Programmable: Not Verified Number of I/O: 96 Supplier Device Package: 120-LQFP (16x16) Peripherals: DMA, LVD, POR, PWM, WDT Connectivity: CANbus, CSIO, I²C, LINbus, SPI, UART/USART Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Core Size: 32-Bit Data Converters: A/D 42x12b SAR; D/A 2x8b Core Processor: FR81S EEPROM Size: 64K x 8 Program Memory Type: FLASH Oscillator Type: External Operating Temperature: -40°C ~ 105°C (TA) RAM Size: 56K x 8 Program Memory Size: 448KB (448K x 8) Speed: 80MHz Mounting Type: Surface Mount Package / Case: 120-LQFP Packaging: Tray |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 840 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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IRLR2705TRPBF | Infineon Technologies |
Description: MOSFET N-CH 55V 28A DPAKPackaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 28A (Tc) Rds On (Max) @ Id, Vgs: 40mOhm @ 17A, 10V Power Dissipation (Max): 68W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: TO-252AA (DPAK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 25 V |
auf Bestellung 14000 Stücke: Lieferzeit 10-14 Tag (e) |
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IRLR2705TRPBF | Infineon Technologies |
Description: MOSFET N-CH 55V 28A DPAKPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 28A (Tc) Rds On (Max) @ Id, Vgs: 40mOhm @ 17A, 10V Power Dissipation (Max): 68W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: TO-252AA (DPAK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 25 V |
auf Bestellung 14674 Stücke: Lieferzeit 10-14 Tag (e) |
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CY8C29666-24LTXI | Infineon Technologies |
Description: IC MCU 8BIT 32KB FLASH 48QFNNumber of I/O: 44 Part Status: Active Supplier Device Package: 48-QFN (7x7) Peripherals: POR, PWM, WDT Connectivity: I2C, SPI, UART/USART Voltage - Supply (Vcc/Vdd): 3V ~ 5.25V Core Size: 8-Bit Data Converters: A/D 12x14b; D/A 4x9b Core Processor: M8C Program Memory Type: FLASH Oscillator Type: Internal Operating Temperature: -40°C ~ 85°C (TA) RAM Size: 2K x 8 Program Memory Size: 32KB (32K x 8) Speed: 24MHz Mounting Type: Surface Mount Package / Case: 48-VFQFN Exposed Pad Packaging: Tray DigiKey Programmable: Not Verified |
auf Bestellung 420 Stücke: Lieferzeit 10-14 Tag (e) |
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BSP76E6327HUSA1 | Infineon Technologies |
Description: IC PWR DRVR N-CHAN 1:1 SOT223-4Packaging: Tape & Reel (TR) Part Status: Obsolete Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage Supplier Device Package: PG-SOT223-4 Ratio - Input:Output: 1:1 Current - Output (Max): 1.4A Voltage - Supply (Vcc/Vdd): Not Required Voltage - Load: 42V (Max) Input Type: Non-Inverting Rds On (Typ): 150mOhm Output Configuration: Low Side Operating Temperature: -40°C ~ 150°C (TJ) Switch Type: General Purpose Interface: On/Off Number of Outputs: 1 Mounting Type: Surface Mount Output Type: N-Channel Package / Case: TO-261-4, TO-261AA Features: Auto Restart |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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CY8CMBR3116-LQXIT | Infineon Technologies |
Description: IC CAP SENSE 24QFNPackaging: Tape & Reel (TR) Package / Case: 24-UFQFN Exposed Pad Mounting Type: Surface Mount Interface: I2C Type: Buttons Operating Temperature: -40°C ~ 85°C Voltage - Supply: 1.8V ~ 5.5V Number of Inputs: Up to 16 Supplier Device Package: 24-QFN (4x4) Proximity Detection: Yes LED Driver Channels: Up to 8 Part Status: Active DigiKey Programmable: Not Verified |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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CY8CMBR3116-LQXIT | Infineon Technologies |
Description: IC CAP SENSE 24QFNPackaging: Cut Tape (CT) Package / Case: 24-UFQFN Exposed Pad Mounting Type: Surface Mount Interface: I2C Type: Buttons Operating Temperature: -40°C ~ 85°C Voltage - Supply: 1.8V ~ 5.5V Number of Inputs: Up to 16 Supplier Device Package: 24-QFN (4x4) Proximity Detection: Yes LED Driver Channels: Up to 8 Part Status: Active DigiKey Programmable: Not Verified |
auf Bestellung 5422 Stücke: Lieferzeit 10-14 Tag (e) |
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MB95F013KPMC-G-SNE2 | Infineon Technologies |
Description: IC MCU 32LQFP |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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IAUC100N10S5L040ATMA1 | Infineon Technologies |
Description: MOSFET N-CH 100V 100A 8TDSON-34Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: PG-TDSON-8-34 Vgs(th) (Max) @ Id: 2V @ 90µA Power Dissipation (Max): 167W (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 50A, 10V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Tape & Reel (TR) Qualification: AEC-Q101 Grade: Automotive |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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IAUC100N10S5L040ATMA1 | Infineon Technologies |
Description: MOSFET N-CH 100V 100A 8TDSON-34Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: PG-TDSON-8-34 Vgs(th) (Max) @ Id: 2V @ 90µA Power Dissipation (Max): 167W (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 50A, 10V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) Qualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V |
auf Bestellung 7707 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPB80N06S2LH5ATMA3 | Infineon Technologies | Description: MOSFET |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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BGS 12AL7-6 E6433 | Infineon Technologies |
Description: IC RF SWITCH SPDT 3GHZ TSLP7-6Supplier Device Package: PG-TSLP-7-6 Isolation: 25dB Test Frequency: 2GHz Topology: Reflective Frequency Range: 30MHz ~ 3GHz Insertion Loss: 0.5dB Voltage - Supply: 2.4V ~ 3.6V Operating Temperature: -30°C ~ 85°C RF Type: General Purpose Circuit: SPDT Mounting Type: Surface Mount Impedance: 50Ohm Package / Case: 6-XFDFN Exposed Pad Features: DC Blocked, Single Line Control Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 25000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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BGS12AL76E6327XTMA1 | Infineon Technologies |
Description: IC RF SWITCH SPDT 3GHZ TSLP7-6Supplier Device Package: PG-TSLP-7-6 Isolation: 25dB Test Frequency: 2GHz Topology: Reflective Frequency Range: 30MHz ~ 3GHz Insertion Loss: 0.5dB Voltage - Supply: 2.4V ~ 3.6V Operating Temperature: -30°C ~ 85°C RF Type: General Purpose Circuit: SPDT Mounting Type: Surface Mount Impedance: 50Ohm Package / Case: 6-XFDFN Exposed Pad Features: DC Blocked, Single Line Control Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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BGS12AL76E6327XTMA1 | Infineon Technologies |
Description: IC RF SWITCH SPDT 3GHZ TSLP7-6Supplier Device Package: PG-TSLP-7-6 Isolation: 25dB Test Frequency: 2GHz Topology: Reflective Frequency Range: 30MHz ~ 3GHz Insertion Loss: 0.5dB Voltage - Supply: 2.4V ~ 3.6V Operating Temperature: -30°C ~ 85°C RF Type: General Purpose Circuit: SPDT Mounting Type: Surface Mount Impedance: 50Ohm Package / Case: 6-XFDFN Exposed Pad Features: DC Blocked, Single Line Control Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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BGS 12A TR E6327 | Infineon Technologies |
Description: IC RF SWITCH SPDT 3GHZ FWLP-6Operating Temperature: -30°C ~ 85°C RF Type: General Purpose Circuit: SPDT Impedance: 50Ohm Package / Case: 6-XFBGA, WLCSP Features: DC Blocked, Single Line Control Packaging: Tape & Reel (TR) Supplier Device Package: FWLP-6 Isolation: 27dB Test Frequency: 2GHz Topology: Reflective Frequency Range: 100MHz ~ 3GHz Insertion Loss: 0.6dB Voltage - Supply: 2.4V ~ 3.6V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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BGS12AL74E6327XTSA1 | Infineon Technologies |
Description: IC RF SWITCH SPDT 3GHZ TSLP7-4Supplier Device Package: TSLP-7-4 Isolation: 25dB Test Frequency: 2GHz Topology: Reflective Frequency Range: 30MHz ~ 3GHz Insertion Loss: 0.5dB Voltage - Supply: 2.4V ~ 3.6V Operating Temperature: -30°C ~ 85°C RF Type: General Purpose Circuit: SPDT Impedance: 50Ohm Package / Case: 6-XFDFN Exposed Pad Features: DC Blocked, Single Line Control Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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BGS12AL74E6327XTSA1 | Infineon Technologies |
Description: IC RF SWITCH SPDT 3GHZ TSLP7-4Supplier Device Package: TSLP-7-4 Isolation: 25dB Test Frequency: 2GHz Topology: Reflective Frequency Range: 30MHz ~ 3GHz Insertion Loss: 0.5dB Voltage - Supply: 2.4V ~ 3.6V Operating Temperature: -30°C ~ 85°C RF Type: General Purpose Circuit: SPDT Impedance: 50Ohm Package / Case: 6-XFDFN Exposed Pad Features: DC Blocked, Single Line Control Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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CY8C624ALQI-S2D42 | Infineon Technologies |
Description: IC MCU 32BIT 2MB FLASH 68QFNPackaging: Tray Package / Case: 68-VFQFN Exposed Pad Mounting Type: Surface Mount Speed: 100MHz, 150MHz Program Memory Size: 2MB (2M x 8) RAM Size: 1M x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: External, Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F Data Converters: A/D 16x10b SAR, 16x12b Sigma-Delta; D/A 2x7/8b Core Size: 32-Bit Dual-Core Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V Connectivity: eMMC/SD/SDIO, FIFO, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART, USB Peripherals: Brown-out Detect/Reset, CapSense, Crypto - AES, I2S, DMA, LCD, LVD, POR, PWM, RSA, SHA, Temp Sensor, TRNG, WDT Supplier Device Package: 68-QFN (8x8) Part Status: Active Number of I/O: 53 DigiKey Programmable: Not Verified |
auf Bestellung 305 Stücke: Lieferzeit 10-14 Tag (e) |
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NAC1080XTMA2 | Infineon Technologies |
Description: CONTACTLESS POWER&SENSORSupplier Device Package: PG-DSO-16-45 Standards: ISO 14443A Type: RFID Reader/Transponder Interface: I2C, SPI, UART Mounting Type: Surface Mount Package / Case: 16-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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NAC1080XTMA2 | Infineon Technologies |
Description: CONTACTLESS POWER&SENSORSupplier Device Package: PG-DSO-16-45 Standards: ISO 14443A Type: RFID Reader/Transponder Interface: I2C, SPI, UART Mounting Type: Surface Mount Package / Case: 16-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) |
auf Bestellung 4337 Stücke: Lieferzeit 10-14 Tag (e) |
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DEVKITNAC1080TOBO1 | Infineon Technologies |
Description: DEV KITPart Status: Active Supplied Contents: Board(s) Type: Near Field Communication (NFC) Frequency: 13.56MHz For Use With/Related Products: NAC1080 Packaging: Bulk |
auf Bestellung 13 Stücke: Lieferzeit 10-14 Tag (e) |
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IRF3007STRLPBF | Infineon Technologies |
Description: MOSFET N CH 75V 62A D2PAKPackaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 62A (Tc) Rds On (Max) @ Id, Vgs: 12.6mOhm @ 48A, 10V Power Dissipation (Max): 120W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D2PAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 75 V Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3270 pF @ 25 V |
auf Bestellung 2400 Stücke: Lieferzeit 10-14 Tag (e) |
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IRF3007STRLPBF | Infineon Technologies |
Description: MOSFET N CH 75V 62A D2PAKPackaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 62A (Tc) Rds On (Max) @ Id, Vgs: 12.6mOhm @ 48A, 10V Power Dissipation (Max): 120W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D2PAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 75 V Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3270 pF @ 25 V |
auf Bestellung 3084 Stücke: Lieferzeit 10-14 Tag (e) |
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CY9AF141MBBGL-GK9E1 | Infineon Technologies |
Description: IC MCU 32BIT 64KB FLASH 96FBGADigiKey Programmable: Not Verified Number of I/O: 66 Supplier Device Package: 96-FBGA (6x6) Peripherals: LVD, POR, PWM, WDT Connectivity: CSIO, EBI/EMI, I2C, SPI, UART/USART Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V Core Size: 32-Bit Single-Core Data Converters: A/D 17x12b Core Processor: ARM® Cortex®-M3 Program Memory Type: FLASH Oscillator Type: Internal Operating Temperature: -40°C ~ 85°C (TA) RAM Size: 16K x 8 Program Memory Size: 64KB (64K x 8) Speed: 40MHz Mounting Type: Surface Mount Package / Case: 96-LFBGA Packaging: Tray |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 4900 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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CY9AF142LAQN-G-AVE2 | Infineon Technologies | Description: IC MCU 32BIT 160KB FLASH 64QFN |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2600 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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CY9AF141MBPMC1-G-JNE2 | Infineon Technologies |
Description: IC MCU 32BIT 64KB FLASH 80LQFP |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 900 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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CY9AF141MABGL-GK9E1 | Infineon Technologies |
Description: IC MCU 32BIT 96KB FLASH 96FBGA DigiKey Programmable: Not Verified Number of I/O: 66 Supplier Device Package: 96-FBGA (6x6) Peripherals: LVD, POR, PWM, WDT Connectivity: CSIO, EBI/EMI, I2C, SPI, UART/USART Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V Core Size: 32-Bit Data Converters: A/D 17x12b SAR Core Processor: ARM® Cortex®-M3 Program Memory Type: FLASH Oscillator Type: External, Internal Operating Temperature: -40°C ~ 85°C (TA) RAM Size: 16K x 8 Program Memory Size: 96KB (96K x 8) Speed: 40MHz Mounting Type: Surface Mount Package / Case: 96-LFBGA Packaging: Tray |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 4900 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| CY9AF141NABGL-GK9E1 | Infineon Technologies | Description: MM MCU |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1980 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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CY9AF141NBBGL-GK9E1 | Infineon Technologies | Description: IC MCU 32BIT 64KB FLASH 112BGA |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1980 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| FF600R17KE3B2S1NOSA1 | Infineon Technologies |
Description: FF600R17 - INSULATED GATE BIPOLAPackaging: Bulk Part Status: Active |
auf Bestellung 116 Stücke: Lieferzeit 10-14 Tag (e) |
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| FF600R12IE4VBOSA1 | Infineon Technologies |
Description: IGBT MODULE 1200V 600A 3350WPackaging: Bulk Part Status: Active Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Half Bridge Inverter Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 600A NTC Thermistor: Yes IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 600 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 3350 W Current - Collector Cutoff (Max): 5 mA Input Capacitance (Cies) @ Vce: 37000 pF @ 25 V |
auf Bestellung 57 Stücke: Lieferzeit 10-14 Tag (e) |
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| FF600R12IE4PNOSA1 | Infineon Technologies |
Description: IGBT MOD 1200V 600A 3350W MOD Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Half Bridge Operating Temperature: -40°C ~ 150°C Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 600A NTC Thermistor: Yes Supplier Device Package: Module IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 600 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 3350 W Current - Collector Cutoff (Max): 5 mA Input Capacitance (Cies) @ Vce: 37 nF @ 25 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| FF600R12KE3NOSA1 | Infineon Technologies |
Description: IGBT MOD 1200V 850A 2800W MODPackaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: 2 Independent Operating Temperature: -40°C ~ 125°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 600A NTC Thermistor: No Supplier Device Package: Module Current - Collector (Ic) (Max): 850 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 2800 W Current - Collector Cutoff (Max): 5 mA |
auf Bestellung 28 Stücke: Lieferzeit 10-14 Tag (e) |
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FF600R12IP4VBOSA1 | Infineon Technologies |
Description: IGBT MOD 1200V 600A 3350W MODPackaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: 2 Independent Operating Temperature: -40°C ~ 150°C Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 600A NTC Thermistor: Yes Supplier Device Package: Module IGBT Type: Trench Field Stop Part Status: Not For New Designs Current - Collector (Ic) (Max): 600 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 3350 W Current - Collector Cutoff (Max): 5 mA Input Capacitance (Cies) @ Vce: 37 nF @ 25 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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CY8C3666AXI-052 | Infineon Technologies |
Description: IC MCU 8BIT 64KB FLASH 100TQFPDigiKey Programmable: Not Verified Number of I/O: 62 Part Status: Active Supplier Device Package: 100-TQFP (14x14) Peripherals: CapSense, DMA, POR, PWM, WDT Connectivity: EBI/EMI, I2C, LINbus, SPI, UART/USART Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V Core Size: 8-Bit Data Converters: A/D 16x12b; D/A 4x8b Core Processor: 8051 EEPROM Size: 2K x 8 Program Memory Type: FLASH Oscillator Type: Internal Operating Temperature: -40°C ~ 85°C (TA) RAM Size: 8K x 8 Program Memory Size: 64KB (64K x 8) Speed: 67MHz Mounting Type: Surface Mount Package / Case: 100-LQFP Packaging: Tray |
auf Bestellung 1206 Stücke: Lieferzeit 10-14 Tag (e) |
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CY8C3665AXI-198 | Infineon Technologies |
Description: IC MCU 8BIT 32KB FLASH 100TQFP |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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CY8C3665PVI-008 | Infineon Technologies |
Description: IC MCU 8BIT 32KB FLASH 48SSOP |
auf Bestellung 589 Stücke: Lieferzeit 10-14 Tag (e) |
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CY8C3665PVI-008 | Infineon Technologies |
Description: IC MCU 8BIT 32KB FLASH 48SSOP |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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CY8C3665LTI-199 | Infineon Technologies |
Description: IC MCU 8BIT 32KB FLASH 68QFN |
auf Bestellung 4953 Stücke: Lieferzeit 10-14 Tag (e) |
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| IRFS4410ZPBF |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 97A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 4820 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Discontinued at Digi-Key
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 150µA
Power Dissipation (Max): 230W (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 58A, 10V
Current - Continuous Drain (Id) @ 25°C: 97A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
Description: MOSFET N-CH 100V 97A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 4820 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Discontinued at Digi-Key
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 150µA
Power Dissipation (Max): 230W (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 58A, 10V
Current - Continuous Drain (Id) @ 25°C: 97A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| S25FL128SAGMFIG11 |
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Hersteller: Infineon Technologies
Description: IC FLASH 128MBIT SPI/QUAD 16SOIC
Description: IC FLASH 128MBIT SPI/QUAD 16SOIC
auf Bestellung 826 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 21.88 EUR |
| CY2313ANZSXC-1 |
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Hersteller: Infineon Technologies
Description: IC CLK BUFF 13OUT SDRAM 28SOIC
DigiKey Programmable: Not Verified
Number of Circuits: 1
Part Status: Obsolete
PLL: No
Supplier Device Package: 28-SOIC
Differential - Input:Output: No/No
Ratio - Input:Output: 1:13
Main Purpose: Memory, SDRAM DIMM
Voltage - Supply: 3.135V ~ 3.465V
Operating Temperature: 0°C ~ 70°C
Input: Clock
Frequency - Max: 100MHz
Output: Clock
Mounting Type: Surface Mount
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Packaging: Tube
Description: IC CLK BUFF 13OUT SDRAM 28SOIC
DigiKey Programmable: Not Verified
Number of Circuits: 1
Part Status: Obsolete
PLL: No
Supplier Device Package: 28-SOIC
Differential - Input:Output: No/No
Ratio - Input:Output: 1:13
Main Purpose: Memory, SDRAM DIMM
Voltage - Supply: 3.135V ~ 3.465V
Operating Temperature: 0°C ~ 70°C
Input: Clock
Frequency - Max: 100MHz
Output: Clock
Mounting Type: Surface Mount
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IPB011N04NF2SATMA1 |
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Hersteller: Infineon Technologies
Description: TRENCH <= 40V
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Ta), 201A (Tc)
Rds On (Max) @ Id, Vgs: 1.15mOhm @ 100A, 10V
Power Dissipation (Max): 3.8W (Ta), 375W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 249µA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 315 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15000 pF @ 20 V
Description: TRENCH <= 40V
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Ta), 201A (Tc)
Rds On (Max) @ Id, Vgs: 1.15mOhm @ 100A, 10V
Power Dissipation (Max): 3.8W (Ta), 375W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 249µA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 315 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15000 pF @ 20 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IPB011N04NF2SATMA1 |
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Hersteller: Infineon Technologies
Description: TRENCH <= 40V
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Ta), 201A (Tc)
Rds On (Max) @ Id, Vgs: 1.15mOhm @ 100A, 10V
Power Dissipation (Max): 3.8W (Ta), 375W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 249µA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 315 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15000 pF @ 20 V
Description: TRENCH <= 40V
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Ta), 201A (Tc)
Rds On (Max) @ Id, Vgs: 1.15mOhm @ 100A, 10V
Power Dissipation (Max): 3.8W (Ta), 375W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 249µA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 315 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15000 pF @ 20 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| CY9AFB42NBBGL-GK9E1 |
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Hersteller: Infineon Technologies
Description: IC MCU 32BIT 160KB FLASH 112BGA
Packaging: Tray
Package / Case: 112-LFBGA
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 160KB (160K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 24x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
Connectivity: CSIO, EBI/EMI, I2C, UART/USART, USB
Peripherals: DMA, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 112-PFBGA (10x10)
Part Status: Active
Number of I/O: 83
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 160KB FLASH 112BGA
Packaging: Tray
Package / Case: 112-LFBGA
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 160KB (160K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 24x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
Connectivity: CSIO, EBI/EMI, I2C, UART/USART, USB
Peripherals: DMA, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 112-PFBGA (10x10)
Part Status: Active
Number of I/O: 83
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Mindestbestellmenge: 1980 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| S25FL256SAGNFE001 |
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Hersteller: Infineon Technologies
Description: IC FLASH 256MBIT SPI/QUAD 8WSON
Packaging: Tube
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 8-WSON (6x8)
Part Status: Active
Write Cycle Time - Word, Page: 750µs
Memory Interface: SPI - Quad I/O
Access Time: 6.5 ns
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
Description: IC FLASH 256MBIT SPI/QUAD 8WSON
Packaging: Tube
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 8-WSON (6x8)
Part Status: Active
Write Cycle Time - Word, Page: 750µs
Memory Interface: SPI - Quad I/O
Access Time: 6.5 ns
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Mindestbestellmenge: 820 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| F3L100R07W2H3B11BPSA1 |
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Hersteller: Infineon Technologies
Description: IGBT MODULE 650V 70A AG-EASY2B
Input Capacitance (Cies) @ Vce: 6.2 nF @ 650 V
Current - Collector Cutoff (Max): 32 µA
Power - Max: 20 mW
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 70 A
Part Status: Active
IGBT Type: Trench Field Stop
Configuration: Three Level Inverter
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
Supplier Device Package: AG-EASY2B
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 100A
Operating Temperature: -40°C ~ 150°C (TJ)
Description: IGBT MODULE 650V 70A AG-EASY2B
Input Capacitance (Cies) @ Vce: 6.2 nF @ 650 V
Current - Collector Cutoff (Max): 32 µA
Power - Max: 20 mW
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 70 A
Part Status: Active
IGBT Type: Trench Field Stop
Configuration: Three Level Inverter
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
Supplier Device Package: AG-EASY2B
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 100A
Operating Temperature: -40°C ~ 150°C (TJ)
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 80.84 EUR |
| PEB3342HTV22XP |
Hersteller: Infineon Technologies
Description: TELEPHONY INTERFACE CIRCUIT
Description: TELEPHONY INTERFACE CIRCUIT
auf Bestellung 300 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 47+ | 10.8 EUR |
| CY37064P100-125AXC |
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Hersteller: Infineon Technologies
Description: IC CPLD 64MC 10NS 100TQFP
DigiKey Programmable: Verified
Number of I/O: 69
Part Status: Obsolete
Voltage Supply - Internal: 4.75V ~ 5.25V
Supplier Device Package: 100-TQFP (14x14)
Delay Time tpd(1) Max: 10 ns
Operating Temperature: 0°C ~ 70°C (TA)
Number of Macrocells: 64
Programmable Type: In-System Reprogrammable™ (ISR™) CMOS
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Packaging: Tray
Description: IC CPLD 64MC 10NS 100TQFP
DigiKey Programmable: Verified
Number of I/O: 69
Part Status: Obsolete
Voltage Supply - Internal: 4.75V ~ 5.25V
Supplier Device Package: 100-TQFP (14x14)
Delay Time tpd(1) Max: 10 ns
Operating Temperature: 0°C ~ 70°C (TA)
Number of Macrocells: 64
Programmable Type: In-System Reprogrammable™ (ISR™) CMOS
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Packaging: Tray
Produkt ist nicht verfügbar
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| CY37064P100-125AC |
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Hersteller: Infineon Technologies
Description: IC CPLD 64MC 10NS 100TQFP
DigiKey Programmable: Not Verified
Number of I/O: 69
Part Status: Obsolete
Voltage Supply - Internal: 4.75V ~ 5.25V
Supplier Device Package: 100-TQFP (14x14)
Delay Time tpd(1) Max: 10 ns
Operating Temperature: 0°C ~ 70°C (TA)
Number of Macrocells: 64
Programmable Type: In-System Reprogrammable™ (ISR™) CMOS
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Packaging: Bag
Description: IC CPLD 64MC 10NS 100TQFP
DigiKey Programmable: Not Verified
Number of I/O: 69
Part Status: Obsolete
Voltage Supply - Internal: 4.75V ~ 5.25V
Supplier Device Package: 100-TQFP (14x14)
Delay Time tpd(1) Max: 10 ns
Operating Temperature: 0°C ~ 70°C (TA)
Number of Macrocells: 64
Programmable Type: In-System Reprogrammable™ (ISR™) CMOS
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Packaging: Bag
Produkt ist nicht verfügbar
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| BSM75GB120DN2HOSA1 |
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Hersteller: Infineon Technologies
Description: MEDIUM POWER 34MM
Description: MEDIUM POWER 34MM
auf Bestellung 74 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4+ | 131.1 EUR |
| BG 3230 E6327 |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH DUAL 8V SOT-363
Description: MOSFET N-CH DUAL 8V SOT-363
Produkt ist nicht verfügbar
Im Einkaufswagen
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| FM28V100-TGTR |
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Hersteller: Infineon Technologies
Description: IC FRAM 1MBIT PARALLEL 32TSOP I
DigiKey Programmable: Not Verified
Memory Organization: 128K x 8
Access Time: 90 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 90ns
Part Status: Active
Supplier Device Package: 32-TSOP I
Memory Format: FRAM
Technology: FRAM (Ferroelectric RAM)
Voltage - Supply: 2V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 1Mbit
Mounting Type: Surface Mount
Package / Case: 32-TFSOP (0.465", 11.80mm Width)
Packaging: Tape & Reel (TR)
Description: IC FRAM 1MBIT PARALLEL 32TSOP I
DigiKey Programmable: Not Verified
Memory Organization: 128K x 8
Access Time: 90 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 90ns
Part Status: Active
Supplier Device Package: 32-TSOP I
Memory Format: FRAM
Technology: FRAM (Ferroelectric RAM)
Voltage - Supply: 2V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 1Mbit
Mounting Type: Surface Mount
Package / Case: 32-TFSOP (0.465", 11.80mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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| FM28V100-TGTR |
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Hersteller: Infineon Technologies
Description: IC FRAM 1MBIT PARALLEL 32TSOP I
Packaging: Cut Tape (CT)
Package / Case: 32-TFSOP (0.465", 11.80mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 3.6V
Technology: FRAM (Ferroelectric RAM)
Memory Format: FRAM
Supplier Device Package: 32-TSOP I
Part Status: Active
Write Cycle Time - Word, Page: 90ns
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
Description: IC FRAM 1MBIT PARALLEL 32TSOP I
Packaging: Cut Tape (CT)
Package / Case: 32-TFSOP (0.465", 11.80mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 3.6V
Technology: FRAM (Ferroelectric RAM)
Memory Format: FRAM
Supplier Device Package: 32-TSOP I
Part Status: Active
Write Cycle Time - Word, Page: 90ns
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
auf Bestellung 501 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 36.17 EUR |
| 10+ | 33.5 EUR |
| 25+ | 32.44 EUR |
| 50+ | 31.64 EUR |
| 100+ | 30.85 EUR |
| 250+ | 29.83 EUR |
| 500+ | 29.07 EUR |
| FM28V100-TG |
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Hersteller: Infineon Technologies
Description: IC FRAM 1MBIT PARALLEL 32TSOP I
Packaging: Tray
Package / Case: 32-TFSOP (0.465", 11.80mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 3.6V
Technology: FRAM (Ferroelectric RAM)
Memory Format: FRAM
Supplier Device Package: 32-TSOP I
Part Status: Active
Write Cycle Time - Word, Page: 90ns
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
Description: IC FRAM 1MBIT PARALLEL 32TSOP I
Packaging: Tray
Package / Case: 32-TFSOP (0.465", 11.80mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 3.6V
Technology: FRAM (Ferroelectric RAM)
Memory Format: FRAM
Supplier Device Package: 32-TSOP I
Part Status: Active
Write Cycle Time - Word, Page: 90ns
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
auf Bestellung 443 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 38.68 EUR |
| 10+ | 35.83 EUR |
| 25+ | 34.69 EUR |
| 50+ | 33.84 EUR |
| 234+ | 31.98 EUR |
| FM28V102A-TG |
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Hersteller: Infineon Technologies
Description: IC FRAM 1MBIT PARALLEL 44TSOP II
Packaging: Tray
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 3.6V
Technology: FRAM (Ferroelectric RAM)
Memory Format: FRAM
Supplier Device Package: 44-TSOP II
Part Status: Active
Write Cycle Time - Word, Page: 90ns
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 64K x 16
DigiKey Programmable: Not Verified
Description: IC FRAM 1MBIT PARALLEL 44TSOP II
Packaging: Tray
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 3.6V
Technology: FRAM (Ferroelectric RAM)
Memory Format: FRAM
Supplier Device Package: 44-TSOP II
Part Status: Active
Write Cycle Time - Word, Page: 90ns
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 64K x 16
DigiKey Programmable: Not Verified
auf Bestellung 19 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 31.93 EUR |
| 10+ | 28.33 EUR |
| FM28V020-T28GTR |
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Hersteller: Infineon Technologies
Description: IC FRAM 256KBIT PAR 28TSOP I
Technology: FRAM (Ferroelectric RAM)
Voltage - Supply: 2V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 256Kbit
Mounting Type: Surface Mount
Package / Case: 28-TSSOP (0.465", 11.80mm Width)
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Memory Organization: 32K x 8
Access Time: 140 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 140ns
Supplier Device Package: 28-TSOP I
Memory Format: FRAM
Description: IC FRAM 256KBIT PAR 28TSOP I
Technology: FRAM (Ferroelectric RAM)
Voltage - Supply: 2V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 256Kbit
Mounting Type: Surface Mount
Package / Case: 28-TSSOP (0.465", 11.80mm Width)
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Memory Organization: 32K x 8
Access Time: 140 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 140ns
Supplier Device Package: 28-TSOP I
Memory Format: FRAM
Produkt ist nicht verfügbar
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| CY7C1019D-10VXI |
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Hersteller: Infineon Technologies
Description: IC SRAM 1MBIT PARALLEL 32SOJ
DigiKey Programmable: Not Verified
Memory Organization: 128K x 8
Access Time: 10 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 10ns
Supplier Device Package: 32-SOJ
Memory Format: SRAM
Technology: SRAM - Asynchronous
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Volatile
Memory Size: 1Mbit
Mounting Type: Surface Mount
Package / Case: 32-BSOJ (0.400", 10.16mm Width)
Packaging: Tube
Description: IC SRAM 1MBIT PARALLEL 32SOJ
DigiKey Programmable: Not Verified
Memory Organization: 128K x 8
Access Time: 10 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 10ns
Supplier Device Package: 32-SOJ
Memory Format: SRAM
Technology: SRAM - Asynchronous
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Volatile
Memory Size: 1Mbit
Mounting Type: Surface Mount
Package / Case: 32-BSOJ (0.400", 10.16mm Width)
Packaging: Tube
Produkt ist nicht verfügbar
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| CY7C1019DV33-10VXI |
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Hersteller: Infineon Technologies
Description: IC SRAM 1MBIT PARALLEL 32SOJ
DigiKey Programmable: Not Verified
Memory Organization: 128K x 8
Access Time: 10 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 10ns
Supplier Device Package: 32-SOJ
Memory Format: SRAM
Technology: SRAM - Asynchronous
Voltage - Supply: 3V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Volatile
Memory Size: 1Mbit
Mounting Type: Surface Mount
Package / Case: 32-BSOJ (0.400", 10.16mm Width)
Packaging: Tube
Description: IC SRAM 1MBIT PARALLEL 32SOJ
DigiKey Programmable: Not Verified
Memory Organization: 128K x 8
Access Time: 10 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 10ns
Supplier Device Package: 32-SOJ
Memory Format: SRAM
Technology: SRAM - Asynchronous
Voltage - Supply: 3V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Volatile
Memory Size: 1Mbit
Mounting Type: Surface Mount
Package / Case: 32-BSOJ (0.400", 10.16mm Width)
Packaging: Tube
auf Bestellung 342 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 7.16 EUR |
| 23+ | 6.48 EUR |
| 46+ | 6.33 EUR |
| 69+ | 6.25 EUR |
| 115+ | 6.14 EUR |
| 253+ | 5.97 EUR |
| S29GL512S11TFIV10 |
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Hersteller: Infineon Technologies
Description: IC FLASH 512MBIT PARALLEL 56TSOP
DigiKey Programmable: Not Verified
Memory Organization: 32M x 16
Access Time: 110 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 60ns
Part Status: Active
Supplier Device Package: 56-TSOP
Memory Format: FLASH
Technology: FLASH - NOR
Voltage - Supply: 1.65V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 512Mbit
Mounting Type: Surface Mount
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Packaging: Bulk
Description: IC FLASH 512MBIT PARALLEL 56TSOP
DigiKey Programmable: Not Verified
Memory Organization: 32M x 16
Access Time: 110 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 60ns
Part Status: Active
Supplier Device Package: 56-TSOP
Memory Format: FLASH
Technology: FLASH - NOR
Voltage - Supply: 1.65V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 512Mbit
Mounting Type: Surface Mount
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Packaging: Bulk
auf Bestellung 330 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 41+ | 12.37 EUR |
| CY91F523JSEPMC-GTE1 |
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 448KB FLASH 120LQFP
DigiKey Programmable: Not Verified
Number of I/O: 96
Supplier Device Package: 120-LQFP (16x16)
Peripherals: DMA, LVD, POR, PWM, WDT
Connectivity: CANbus, CSIO, I²C, LINbus, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit
Data Converters: A/D 42x12b SAR; D/A 2x8b
Core Processor: FR81S
EEPROM Size: 64K x 8
Program Memory Type: FLASH
Oscillator Type: External
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 56K x 8
Program Memory Size: 448KB (448K x 8)
Speed: 80MHz
Mounting Type: Surface Mount
Package / Case: 120-LQFP
Packaging: Tray
Description: IC MCU 32BIT 448KB FLASH 120LQFP
DigiKey Programmable: Not Verified
Number of I/O: 96
Supplier Device Package: 120-LQFP (16x16)
Peripherals: DMA, LVD, POR, PWM, WDT
Connectivity: CANbus, CSIO, I²C, LINbus, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit
Data Converters: A/D 42x12b SAR; D/A 2x8b
Core Processor: FR81S
EEPROM Size: 64K x 8
Program Memory Type: FLASH
Oscillator Type: External
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 56K x 8
Program Memory Size: 448KB (448K x 8)
Speed: 80MHz
Mounting Type: Surface Mount
Package / Case: 120-LQFP
Packaging: Tray
Produkt ist nicht verfügbar
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| IRLR2705TRPBF |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 28A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 17A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 25 V
Description: MOSFET N-CH 55V 28A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 17A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 25 V
auf Bestellung 14000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2000+ | 0.55 EUR |
| 4000+ | 0.5 EUR |
| 6000+ | 0.48 EUR |
| 10000+ | 0.46 EUR |
| 14000+ | 0.44 EUR |
| IRLR2705TRPBF |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 28A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 17A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 25 V
Description: MOSFET N-CH 55V 28A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 17A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 25 V
auf Bestellung 14674 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 9+ | 2.08 EUR |
| 14+ | 1.3 EUR |
| 100+ | 0.85 EUR |
| 500+ | 0.66 EUR |
| 1000+ | 0.6 EUR |
| CY8C29666-24LTXI |
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Hersteller: Infineon Technologies
Description: IC MCU 8BIT 32KB FLASH 48QFN
Number of I/O: 44
Part Status: Active
Supplier Device Package: 48-QFN (7x7)
Peripherals: POR, PWM, WDT
Connectivity: I2C, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 3V ~ 5.25V
Core Size: 8-Bit
Data Converters: A/D 12x14b; D/A 4x9b
Core Processor: M8C
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 2K x 8
Program Memory Size: 32KB (32K x 8)
Speed: 24MHz
Mounting Type: Surface Mount
Package / Case: 48-VFQFN Exposed Pad
Packaging: Tray
DigiKey Programmable: Not Verified
Description: IC MCU 8BIT 32KB FLASH 48QFN
Number of I/O: 44
Part Status: Active
Supplier Device Package: 48-QFN (7x7)
Peripherals: POR, PWM, WDT
Connectivity: I2C, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 3V ~ 5.25V
Core Size: 8-Bit
Data Converters: A/D 12x14b; D/A 4x9b
Core Processor: M8C
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 2K x 8
Program Memory Size: 32KB (32K x 8)
Speed: 24MHz
Mounting Type: Surface Mount
Package / Case: 48-VFQFN Exposed Pad
Packaging: Tray
DigiKey Programmable: Not Verified
auf Bestellung 420 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 25.26 EUR |
| 10+ | 20.05 EUR |
| 25+ | 18.74 EUR |
| 100+ | 17.31 EUR |
| 260+ | 16.6 EUR |
| BSP76E6327HUSA1 |
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Hersteller: Infineon Technologies
Description: IC PWR DRVR N-CHAN 1:1 SOT223-4
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Supplier Device Package: PG-SOT223-4
Ratio - Input:Output: 1:1
Current - Output (Max): 1.4A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 42V (Max)
Input Type: Non-Inverting
Rds On (Typ): 150mOhm
Output Configuration: Low Side
Operating Temperature: -40°C ~ 150°C (TJ)
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: N-Channel
Package / Case: TO-261-4, TO-261AA
Features: Auto Restart
Description: IC PWR DRVR N-CHAN 1:1 SOT223-4
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Supplier Device Package: PG-SOT223-4
Ratio - Input:Output: 1:1
Current - Output (Max): 1.4A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 42V (Max)
Input Type: Non-Inverting
Rds On (Typ): 150mOhm
Output Configuration: Low Side
Operating Temperature: -40°C ~ 150°C (TJ)
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: N-Channel
Package / Case: TO-261-4, TO-261AA
Features: Auto Restart
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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| CY8CMBR3116-LQXIT |
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Hersteller: Infineon Technologies
Description: IC CAP SENSE 24QFN
Packaging: Tape & Reel (TR)
Package / Case: 24-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C
Type: Buttons
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V ~ 5.5V
Number of Inputs: Up to 16
Supplier Device Package: 24-QFN (4x4)
Proximity Detection: Yes
LED Driver Channels: Up to 8
Part Status: Active
DigiKey Programmable: Not Verified
Description: IC CAP SENSE 24QFN
Packaging: Tape & Reel (TR)
Package / Case: 24-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C
Type: Buttons
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V ~ 5.5V
Number of Inputs: Up to 16
Supplier Device Package: 24-QFN (4x4)
Proximity Detection: Yes
LED Driver Channels: Up to 8
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2500+ | 2.47 EUR |
| 5000+ | 2.42 EUR |
| CY8CMBR3116-LQXIT |
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Hersteller: Infineon Technologies
Description: IC CAP SENSE 24QFN
Packaging: Cut Tape (CT)
Package / Case: 24-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C
Type: Buttons
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V ~ 5.5V
Number of Inputs: Up to 16
Supplier Device Package: 24-QFN (4x4)
Proximity Detection: Yes
LED Driver Channels: Up to 8
Part Status: Active
DigiKey Programmable: Not Verified
Description: IC CAP SENSE 24QFN
Packaging: Cut Tape (CT)
Package / Case: 24-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C
Type: Buttons
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V ~ 5.5V
Number of Inputs: Up to 16
Supplier Device Package: 24-QFN (4x4)
Proximity Detection: Yes
LED Driver Channels: Up to 8
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 5422 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4+ | 4.66 EUR |
| 10+ | 3.49 EUR |
| 25+ | 3.2 EUR |
| 100+ | 2.88 EUR |
| 250+ | 2.72 EUR |
| 500+ | 2.68 EUR |
| MB95F013KPMC-G-SNE2 |
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Hersteller: Infineon Technologies
Description: IC MCU 32LQFP
Description: IC MCU 32LQFP
Produkt ist nicht verfügbar
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| IAUC100N10S5L040ATMA1 |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 100A 8TDSON-34
Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-TDSON-8-34
Vgs(th) (Max) @ Id: 2V @ 90µA
Power Dissipation (Max): 167W (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Description: MOSFET N-CH 100V 100A 8TDSON-34
Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-TDSON-8-34
Vgs(th) (Max) @ Id: 2V @ 90µA
Power Dissipation (Max): 167W (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 5000+ | 1.75 EUR |
| IAUC100N10S5L040ATMA1 |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 100A 8TDSON-34
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-TDSON-8-34
Vgs(th) (Max) @ Id: 2V @ 90µA
Power Dissipation (Max): 167W (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Description: MOSFET N-CH 100V 100A 8TDSON-34
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-TDSON-8-34
Vgs(th) (Max) @ Id: 2V @ 90µA
Power Dissipation (Max): 167W (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
auf Bestellung 7707 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 6.02 EUR |
| 10+ | 3.91 EUR |
| 100+ | 2.71 EUR |
| 500+ | 2.2 EUR |
| 1000+ | 2.04 EUR |
| 2000+ | 1.9 EUR |
| IPB80N06S2LH5ATMA3 |
Hersteller: Infineon Technologies
Description: MOSFET
Description: MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen
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| BGS 12AL7-6 E6433 |
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Hersteller: Infineon Technologies
Description: IC RF SWITCH SPDT 3GHZ TSLP7-6
Supplier Device Package: PG-TSLP-7-6
Isolation: 25dB
Test Frequency: 2GHz
Topology: Reflective
Frequency Range: 30MHz ~ 3GHz
Insertion Loss: 0.5dB
Voltage - Supply: 2.4V ~ 3.6V
Operating Temperature: -30°C ~ 85°C
RF Type: General Purpose
Circuit: SPDT
Mounting Type: Surface Mount
Impedance: 50Ohm
Package / Case: 6-XFDFN Exposed Pad
Features: DC Blocked, Single Line Control
Packaging: Tape & Reel (TR)
Description: IC RF SWITCH SPDT 3GHZ TSLP7-6
Supplier Device Package: PG-TSLP-7-6
Isolation: 25dB
Test Frequency: 2GHz
Topology: Reflective
Frequency Range: 30MHz ~ 3GHz
Insertion Loss: 0.5dB
Voltage - Supply: 2.4V ~ 3.6V
Operating Temperature: -30°C ~ 85°C
RF Type: General Purpose
Circuit: SPDT
Mounting Type: Surface Mount
Impedance: 50Ohm
Package / Case: 6-XFDFN Exposed Pad
Features: DC Blocked, Single Line Control
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 25000 Stücke
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| BGS12AL76E6327XTMA1 |
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Hersteller: Infineon Technologies
Description: IC RF SWITCH SPDT 3GHZ TSLP7-6
Supplier Device Package: PG-TSLP-7-6
Isolation: 25dB
Test Frequency: 2GHz
Topology: Reflective
Frequency Range: 30MHz ~ 3GHz
Insertion Loss: 0.5dB
Voltage - Supply: 2.4V ~ 3.6V
Operating Temperature: -30°C ~ 85°C
RF Type: General Purpose
Circuit: SPDT
Mounting Type: Surface Mount
Impedance: 50Ohm
Package / Case: 6-XFDFN Exposed Pad
Features: DC Blocked, Single Line Control
Packaging: Tape & Reel (TR)
Description: IC RF SWITCH SPDT 3GHZ TSLP7-6
Supplier Device Package: PG-TSLP-7-6
Isolation: 25dB
Test Frequency: 2GHz
Topology: Reflective
Frequency Range: 30MHz ~ 3GHz
Insertion Loss: 0.5dB
Voltage - Supply: 2.4V ~ 3.6V
Operating Temperature: -30°C ~ 85°C
RF Type: General Purpose
Circuit: SPDT
Mounting Type: Surface Mount
Impedance: 50Ohm
Package / Case: 6-XFDFN Exposed Pad
Features: DC Blocked, Single Line Control
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BGS12AL76E6327XTMA1 |
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Hersteller: Infineon Technologies
Description: IC RF SWITCH SPDT 3GHZ TSLP7-6
Supplier Device Package: PG-TSLP-7-6
Isolation: 25dB
Test Frequency: 2GHz
Topology: Reflective
Frequency Range: 30MHz ~ 3GHz
Insertion Loss: 0.5dB
Voltage - Supply: 2.4V ~ 3.6V
Operating Temperature: -30°C ~ 85°C
RF Type: General Purpose
Circuit: SPDT
Mounting Type: Surface Mount
Impedance: 50Ohm
Package / Case: 6-XFDFN Exposed Pad
Features: DC Blocked, Single Line Control
Packaging: Cut Tape (CT)
Description: IC RF SWITCH SPDT 3GHZ TSLP7-6
Supplier Device Package: PG-TSLP-7-6
Isolation: 25dB
Test Frequency: 2GHz
Topology: Reflective
Frequency Range: 30MHz ~ 3GHz
Insertion Loss: 0.5dB
Voltage - Supply: 2.4V ~ 3.6V
Operating Temperature: -30°C ~ 85°C
RF Type: General Purpose
Circuit: SPDT
Mounting Type: Surface Mount
Impedance: 50Ohm
Package / Case: 6-XFDFN Exposed Pad
Features: DC Blocked, Single Line Control
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BGS 12A TR E6327 |
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Hersteller: Infineon Technologies
Description: IC RF SWITCH SPDT 3GHZ FWLP-6
Operating Temperature: -30°C ~ 85°C
RF Type: General Purpose
Circuit: SPDT
Impedance: 50Ohm
Package / Case: 6-XFBGA, WLCSP
Features: DC Blocked, Single Line Control
Packaging: Tape & Reel (TR)
Supplier Device Package: FWLP-6
Isolation: 27dB
Test Frequency: 2GHz
Topology: Reflective
Frequency Range: 100MHz ~ 3GHz
Insertion Loss: 0.6dB
Voltage - Supply: 2.4V ~ 3.6V
Description: IC RF SWITCH SPDT 3GHZ FWLP-6
Operating Temperature: -30°C ~ 85°C
RF Type: General Purpose
Circuit: SPDT
Impedance: 50Ohm
Package / Case: 6-XFBGA, WLCSP
Features: DC Blocked, Single Line Control
Packaging: Tape & Reel (TR)
Supplier Device Package: FWLP-6
Isolation: 27dB
Test Frequency: 2GHz
Topology: Reflective
Frequency Range: 100MHz ~ 3GHz
Insertion Loss: 0.6dB
Voltage - Supply: 2.4V ~ 3.6V
Produkt ist nicht verfügbar
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| BGS12AL74E6327XTSA1 |
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Hersteller: Infineon Technologies
Description: IC RF SWITCH SPDT 3GHZ TSLP7-4
Supplier Device Package: TSLP-7-4
Isolation: 25dB
Test Frequency: 2GHz
Topology: Reflective
Frequency Range: 30MHz ~ 3GHz
Insertion Loss: 0.5dB
Voltage - Supply: 2.4V ~ 3.6V
Operating Temperature: -30°C ~ 85°C
RF Type: General Purpose
Circuit: SPDT
Impedance: 50Ohm
Package / Case: 6-XFDFN Exposed Pad
Features: DC Blocked, Single Line Control
Packaging: Tape & Reel (TR)
Description: IC RF SWITCH SPDT 3GHZ TSLP7-4
Supplier Device Package: TSLP-7-4
Isolation: 25dB
Test Frequency: 2GHz
Topology: Reflective
Frequency Range: 30MHz ~ 3GHz
Insertion Loss: 0.5dB
Voltage - Supply: 2.4V ~ 3.6V
Operating Temperature: -30°C ~ 85°C
RF Type: General Purpose
Circuit: SPDT
Impedance: 50Ohm
Package / Case: 6-XFDFN Exposed Pad
Features: DC Blocked, Single Line Control
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BGS12AL74E6327XTSA1 |
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Hersteller: Infineon Technologies
Description: IC RF SWITCH SPDT 3GHZ TSLP7-4
Supplier Device Package: TSLP-7-4
Isolation: 25dB
Test Frequency: 2GHz
Topology: Reflective
Frequency Range: 30MHz ~ 3GHz
Insertion Loss: 0.5dB
Voltage - Supply: 2.4V ~ 3.6V
Operating Temperature: -30°C ~ 85°C
RF Type: General Purpose
Circuit: SPDT
Impedance: 50Ohm
Package / Case: 6-XFDFN Exposed Pad
Features: DC Blocked, Single Line Control
Packaging: Cut Tape (CT)
Description: IC RF SWITCH SPDT 3GHZ TSLP7-4
Supplier Device Package: TSLP-7-4
Isolation: 25dB
Test Frequency: 2GHz
Topology: Reflective
Frequency Range: 30MHz ~ 3GHz
Insertion Loss: 0.5dB
Voltage - Supply: 2.4V ~ 3.6V
Operating Temperature: -30°C ~ 85°C
RF Type: General Purpose
Circuit: SPDT
Impedance: 50Ohm
Package / Case: 6-XFDFN Exposed Pad
Features: DC Blocked, Single Line Control
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| CY8C624ALQI-S2D42 |
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Hersteller: Infineon Technologies
Description: IC MCU 32BIT 2MB FLASH 68QFN
Packaging: Tray
Package / Case: 68-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 100MHz, 150MHz
Program Memory Size: 2MB (2M x 8)
RAM Size: 1M x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
Data Converters: A/D 16x10b SAR, 16x12b Sigma-Delta; D/A 2x7/8b
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
Connectivity: eMMC/SD/SDIO, FIFO, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART, USB
Peripherals: Brown-out Detect/Reset, CapSense, Crypto - AES, I2S, DMA, LCD, LVD, POR, PWM, RSA, SHA, Temp Sensor, TRNG, WDT
Supplier Device Package: 68-QFN (8x8)
Part Status: Active
Number of I/O: 53
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 2MB FLASH 68QFN
Packaging: Tray
Package / Case: 68-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 100MHz, 150MHz
Program Memory Size: 2MB (2M x 8)
RAM Size: 1M x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
Data Converters: A/D 16x10b SAR, 16x12b Sigma-Delta; D/A 2x7/8b
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
Connectivity: eMMC/SD/SDIO, FIFO, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART, USB
Peripherals: Brown-out Detect/Reset, CapSense, Crypto - AES, I2S, DMA, LCD, LVD, POR, PWM, RSA, SHA, Temp Sensor, TRNG, WDT
Supplier Device Package: 68-QFN (8x8)
Part Status: Active
Number of I/O: 53
DigiKey Programmable: Not Verified
auf Bestellung 305 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 20.29 EUR |
| 10+ | 15.97 EUR |
| 25+ | 14.89 EUR |
| 100+ | 13.71 EUR |
| 260+ | 13.12 EUR |
| NAC1080XTMA2 |
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Hersteller: Infineon Technologies
Description: CONTACTLESS POWER&SENSOR
Supplier Device Package: PG-DSO-16-45
Standards: ISO 14443A
Type: RFID Reader/Transponder
Interface: I2C, SPI, UART
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Description: CONTACTLESS POWER&SENSOR
Supplier Device Package: PG-DSO-16-45
Standards: ISO 14443A
Type: RFID Reader/Transponder
Interface: I2C, SPI, UART
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2500+ | 2.94 EUR |
| NAC1080XTMA2 |
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Hersteller: Infineon Technologies
Description: CONTACTLESS POWER&SENSOR
Supplier Device Package: PG-DSO-16-45
Standards: ISO 14443A
Type: RFID Reader/Transponder
Interface: I2C, SPI, UART
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Description: CONTACTLESS POWER&SENSOR
Supplier Device Package: PG-DSO-16-45
Standards: ISO 14443A
Type: RFID Reader/Transponder
Interface: I2C, SPI, UART
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
auf Bestellung 4337 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4+ | 5.51 EUR |
| 10+ | 4.13 EUR |
| 25+ | 3.79 EUR |
| 100+ | 3.41 EUR |
| 250+ | 3.23 EUR |
| 500+ | 3.12 EUR |
| 1000+ | 3.04 EUR |
| DEVKITNAC1080TOBO1 |
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Hersteller: Infineon Technologies
Description: DEV KIT
Part Status: Active
Supplied Contents: Board(s)
Type: Near Field Communication (NFC)
Frequency: 13.56MHz
For Use With/Related Products: NAC1080
Packaging: Bulk
Description: DEV KIT
Part Status: Active
Supplied Contents: Board(s)
Type: Near Field Communication (NFC)
Frequency: 13.56MHz
For Use With/Related Products: NAC1080
Packaging: Bulk
auf Bestellung 13 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 156.38 EUR |
| IRF3007STRLPBF |
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Hersteller: Infineon Technologies
Description: MOSFET N CH 75V 62A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
Rds On (Max) @ Id, Vgs: 12.6mOhm @ 48A, 10V
Power Dissipation (Max): 120W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3270 pF @ 25 V
Description: MOSFET N CH 75V 62A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
Rds On (Max) @ Id, Vgs: 12.6mOhm @ 48A, 10V
Power Dissipation (Max): 120W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3270 pF @ 25 V
auf Bestellung 2400 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 800+ | 1.74 EUR |
| 1600+ | 1.62 EUR |
| 2400+ | 1.56 EUR |
| IRF3007STRLPBF |
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Hersteller: Infineon Technologies
Description: MOSFET N CH 75V 62A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
Rds On (Max) @ Id, Vgs: 12.6mOhm @ 48A, 10V
Power Dissipation (Max): 120W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3270 pF @ 25 V
Description: MOSFET N CH 75V 62A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
Rds On (Max) @ Id, Vgs: 12.6mOhm @ 48A, 10V
Power Dissipation (Max): 120W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3270 pF @ 25 V
auf Bestellung 3084 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4+ | 5.03 EUR |
| 10+ | 3.27 EUR |
| 100+ | 2.27 EUR |
| CY9AF141MBBGL-GK9E1 |
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Hersteller: Infineon Technologies
Description: IC MCU 32BIT 64KB FLASH 96FBGA
DigiKey Programmable: Not Verified
Number of I/O: 66
Supplier Device Package: 96-FBGA (6x6)
Peripherals: LVD, POR, PWM, WDT
Connectivity: CSIO, EBI/EMI, I2C, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
Core Size: 32-Bit Single-Core
Data Converters: A/D 17x12b
Core Processor: ARM® Cortex®-M3
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 16K x 8
Program Memory Size: 64KB (64K x 8)
Speed: 40MHz
Mounting Type: Surface Mount
Package / Case: 96-LFBGA
Packaging: Tray
Description: IC MCU 32BIT 64KB FLASH 96FBGA
DigiKey Programmable: Not Verified
Number of I/O: 66
Supplier Device Package: 96-FBGA (6x6)
Peripherals: LVD, POR, PWM, WDT
Connectivity: CSIO, EBI/EMI, I2C, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
Core Size: 32-Bit Single-Core
Data Converters: A/D 17x12b
Core Processor: ARM® Cortex®-M3
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 16K x 8
Program Memory Size: 64KB (64K x 8)
Speed: 40MHz
Mounting Type: Surface Mount
Package / Case: 96-LFBGA
Packaging: Tray
Produkt ist nicht verfügbar
Mindestbestellmenge: 4900 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| CY9AF142LAQN-G-AVE2 |
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 160KB FLASH 64QFN
Description: IC MCU 32BIT 160KB FLASH 64QFN
Produkt ist nicht verfügbar
Mindestbestellmenge: 2600 Stücke
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| CY9AF141MBPMC1-G-JNE2 |
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Hersteller: Infineon Technologies
Description: IC MCU 32BIT 64KB FLASH 80LQFP
Description: IC MCU 32BIT 64KB FLASH 80LQFP
Produkt ist nicht verfügbar
Mindestbestellmenge: 900 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| CY9AF141MABGL-GK9E1 |
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 96KB FLASH 96FBGA
DigiKey Programmable: Not Verified
Number of I/O: 66
Supplier Device Package: 96-FBGA (6x6)
Peripherals: LVD, POR, PWM, WDT
Connectivity: CSIO, EBI/EMI, I2C, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
Core Size: 32-Bit
Data Converters: A/D 17x12b SAR
Core Processor: ARM® Cortex®-M3
Program Memory Type: FLASH
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 16K x 8
Program Memory Size: 96KB (96K x 8)
Speed: 40MHz
Mounting Type: Surface Mount
Package / Case: 96-LFBGA
Packaging: Tray
Description: IC MCU 32BIT 96KB FLASH 96FBGA
DigiKey Programmable: Not Verified
Number of I/O: 66
Supplier Device Package: 96-FBGA (6x6)
Peripherals: LVD, POR, PWM, WDT
Connectivity: CSIO, EBI/EMI, I2C, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
Core Size: 32-Bit
Data Converters: A/D 17x12b SAR
Core Processor: ARM® Cortex®-M3
Program Memory Type: FLASH
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 16K x 8
Program Memory Size: 96KB (96K x 8)
Speed: 40MHz
Mounting Type: Surface Mount
Package / Case: 96-LFBGA
Packaging: Tray
Produkt ist nicht verfügbar
Mindestbestellmenge: 4900 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| CY9AF141NABGL-GK9E1 |
Hersteller: Infineon Technologies
Description: MM MCU
Description: MM MCU
Produkt ist nicht verfügbar
Mindestbestellmenge: 1980 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| CY9AF141NBBGL-GK9E1 |
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 64KB FLASH 112BGA
Description: IC MCU 32BIT 64KB FLASH 112BGA
Produkt ist nicht verfügbar
Mindestbestellmenge: 1980 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| FF600R17KE3B2S1NOSA1 |
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Hersteller: Infineon Technologies
Description: FF600R17 - INSULATED GATE BIPOLA
Packaging: Bulk
Part Status: Active
Description: FF600R17 - INSULATED GATE BIPOLA
Packaging: Bulk
Part Status: Active
auf Bestellung 116 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 1071.73 EUR |
| FF600R12IE4VBOSA1 |
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Hersteller: Infineon Technologies
Description: IGBT MODULE 1200V 600A 3350W
Packaging: Bulk
Part Status: Active
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 600A
NTC Thermistor: Yes
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 600 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 3350 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 37000 pF @ 25 V
Description: IGBT MODULE 1200V 600A 3350W
Packaging: Bulk
Part Status: Active
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 600A
NTC Thermistor: Yes
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 600 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 3350 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 37000 pF @ 25 V
auf Bestellung 57 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 726.3 EUR |
| FF600R12IE4PNOSA1 |
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 600A 3350W MOD
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 600A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 600 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 3350 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 37 nF @ 25 V
Description: IGBT MOD 1200V 600A 3350W MOD
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 600A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 600 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 3350 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 37 nF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FF600R12KE3NOSA1 |
![]() |
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 850A 2800W MOD
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 600A
NTC Thermistor: No
Supplier Device Package: Module
Current - Collector (Ic) (Max): 850 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 2800 W
Current - Collector Cutoff (Max): 5 mA
Description: IGBT MOD 1200V 850A 2800W MOD
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 600A
NTC Thermistor: No
Supplier Device Package: Module
Current - Collector (Ic) (Max): 850 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 2800 W
Current - Collector Cutoff (Max): 5 mA
auf Bestellung 28 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 1120.98 EUR |
| FF600R12IP4VBOSA1 |
![]() |
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 600A 3350W MOD
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 600A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 600 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 3350 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 37 nF @ 25 V
Description: IGBT MOD 1200V 600A 3350W MOD
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 600A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 600 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 3350 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 37 nF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| CY8C3666AXI-052 |
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Hersteller: Infineon Technologies
Description: IC MCU 8BIT 64KB FLASH 100TQFP
DigiKey Programmable: Not Verified
Number of I/O: 62
Part Status: Active
Supplier Device Package: 100-TQFP (14x14)
Peripherals: CapSense, DMA, POR, PWM, WDT
Connectivity: EBI/EMI, I2C, LINbus, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Core Size: 8-Bit
Data Converters: A/D 16x12b; D/A 4x8b
Core Processor: 8051
EEPROM Size: 2K x 8
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 8K x 8
Program Memory Size: 64KB (64K x 8)
Speed: 67MHz
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Packaging: Tray
Description: IC MCU 8BIT 64KB FLASH 100TQFP
DigiKey Programmable: Not Verified
Number of I/O: 62
Part Status: Active
Supplier Device Package: 100-TQFP (14x14)
Peripherals: CapSense, DMA, POR, PWM, WDT
Connectivity: EBI/EMI, I2C, LINbus, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Core Size: 8-Bit
Data Converters: A/D 16x12b; D/A 4x8b
Core Processor: 8051
EEPROM Size: 2K x 8
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 8K x 8
Program Memory Size: 64KB (64K x 8)
Speed: 67MHz
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Packaging: Tray
auf Bestellung 1206 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 24.62 EUR |
| 10+ | 17.8 EUR |
| 25+ | 16.04 EUR |
| 80+ | 14.78 EUR |
| CY8C3665AXI-198 |
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Hersteller: Infineon Technologies
Description: IC MCU 8BIT 32KB FLASH 100TQFP
Description: IC MCU 8BIT 32KB FLASH 100TQFP
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| CY8C3665PVI-008 |
![]() |
Hersteller: Infineon Technologies
Description: IC MCU 8BIT 32KB FLASH 48SSOP
Description: IC MCU 8BIT 32KB FLASH 48SSOP
auf Bestellung 589 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 37+ | 13.62 EUR |
| CY8C3665PVI-008 |
![]() |
Hersteller: Infineon Technologies
Description: IC MCU 8BIT 32KB FLASH 48SSOP
Description: IC MCU 8BIT 32KB FLASH 48SSOP
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| CY8C3665LTI-199 |
![]() |
Hersteller: Infineon Technologies
Description: IC MCU 8BIT 32KB FLASH 68QFN
Description: IC MCU 8BIT 32KB FLASH 68QFN
auf Bestellung 4953 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 31+ | 13.4 EUR |




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