Produkte > INFINEON TECHNOLOGIES > Alle Produkte des Herstellers INFINEON TECHNOLOGIES (149684) > Seite 522 nach 2495
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CY90F462APMC-G-UNE1 | Infineon Technologies |
Description: IC MCU 16BIT 64KB FLASH 64LQFP Packaging: Tray Package / Case: 64-LQFP Mounting Type: Surface Mount Speed: 16MHz Program Memory Size: 64KB (64K x 8) RAM Size: 2K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: External Program Memory Type: FLASH Core Processor: F²MC-16LX Data Converters: A/D 8x8/10b Core Size: 16-Bit Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V Connectivity: UART/USART Peripherals: POR, PWM, WDT Supplier Device Package: 64-LQFP (12x12) Number of I/O: 51 DigiKey Programmable: Not Verified |
auf Bestellung 1190 Stücke: Lieferzeit 10-14 Tag (e) |
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CY8C6137BZI-F14 | Infineon Technologies |
Description: IC MCU 32BIT 1MB FLASH 124BGAPackaging: Tray Package / Case: 124-VFBGA Mounting Type: Surface Mount Speed: 150MHz Program Memory Size: 1MB (1M x 8) RAM Size: 288K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH EEPROM Size: 32K x 8 Core Processor: ARM® Cortex®-M4 Data Converters: A/D 8x12b SAR; D/A 1x12b Core Size: 32-Bit Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V Connectivity: I2C, LINbus, QSPI, SPI, UART/USART, USB Peripherals: Brown-out Detect/Reset, Cap Sense, DMA, I2S, POR, PWM, WDT Supplier Device Package: 124-VFBGA (9x9) Part Status: Active Number of I/O: 104 DigiKey Programmable: Not Verified |
auf Bestellung 127 Stücke: Lieferzeit 10-14 Tag (e) |
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PVG612AS-TPBF | Infineon Technologies |
Description: SSR RELAY SPST-NO 2A 0-60VPackaging: Tape & Reel (TR) Package / Case: 6-SMD (0.300", 7.62mm) Output Type: AC, DC Mounting Type: Surface Mount Voltage - Input: 1.2VDC Circuit: SPST-NO (1 Form A) Operating Temperature: -40°C ~ 85°C Termination Style: Gull Wing Load Current: 2 A Approval Agency: UL Supplier Device Package: 6-SMT Part Status: Active Voltage - Load: 0 V ~ 60 V On-State Resistance (Max): 100 mOhms |
auf Bestellung 750 Stücke: Lieferzeit 10-14 Tag (e) |
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PVG612AS-TPBF | Infineon Technologies |
Description: SSR RELAY SPST-NO 2A 0-60VPackaging: Cut Tape (CT) Package / Case: 6-SMD (0.300", 7.62mm) Output Type: AC, DC Mounting Type: Surface Mount Voltage - Input: 1.2VDC Circuit: SPST-NO (1 Form A) Operating Temperature: -40°C ~ 85°C Termination Style: Gull Wing Load Current: 2 A Approval Agency: UL Supplier Device Package: 6-SMT Part Status: Active Voltage - Load: 0 V ~ 60 V On-State Resistance (Max): 100 mOhms |
auf Bestellung 1386 Stücke: Lieferzeit 10-14 Tag (e) |
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S29GL512T10TFI033 | Infineon Technologies |
Description: IC FLASH 512MBIT PARALLEL 56TSOP |
Produkt ist nicht verfügbar |
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S29GL512T10TFI030 | Infineon Technologies |
Description: IC FLASH 512MBIT PARALLEL 56TSOP |
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S29GL512T10TFI043 | Infineon Technologies |
Description: IC FLASH 512MBIT PARALLEL 56TSOP |
Produkt ist nicht verfügbar |
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SAF-XC866L-2FRI BE | Infineon Technologies |
Description: IC MCU 8BIT 8KB FLASH 38TSSOPPackaging: Tape & Reel (TR) Package / Case: 38-TFSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Speed: 86MHz Program Memory Size: 8KB (8K x 8) RAM Size: 768 x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: XC800 Data Converters: A/D 8x10b Core Size: 8-Bit Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V Connectivity: LINbus, SSI, UART/USART Peripherals: Brown-out Detect/Reset, POR, PWM, WDT Supplier Device Package: PG-TSSOP-38 Number of I/O: 19 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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XC8664FRIBEFXUMA1 | Infineon Technologies |
Description: IC MCU 8BIT 16KB FLASH 38TSSOPPackaging: Cut Tape (CT) Package / Case: 38-TFSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Speed: 86MHz Program Memory Size: 16KB (16K x 8) RAM Size: 768 x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: XC800 Data Converters: A/D 8x10b Core Size: 8-Bit Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V Connectivity: SSI, UART/USART Peripherals: Brown-out Detect/Reset, POR, PWM, WDT Supplier Device Package: PG-TSSOP-38 Number of I/O: 19 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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AUIRF2804STRL | Infineon Technologies |
Description: MOSFET N-CH 40V 195A D2PAKPackaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 195A (Tc) Rds On (Max) @ Id, Vgs: 2mOhm @ 75A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D2PAK Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6450 pF @ 25 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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AUIRF2804STRL | Infineon Technologies |
Description: MOSFET N-CH 40V 195A D2PAKPackaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 195A (Tc) Rds On (Max) @ Id, Vgs: 2mOhm @ 75A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D2PAK Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6450 pF @ 25 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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IKY140N120CH7XKSA1 | Infineon Technologies |
Description: IGBT TRENCH FS 1200V 232A TO247Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 101 ns Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 140A Supplier Device Package: PG-TO247-4-U10 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 50ns/407ns Switching Energy: 2.64mJ (on), 3.9mJ (off) Gate Charge: 1032 nC Part Status: Active Current - Collector (Ic) (Max): 232 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 560 A Power - Max: 962 W |
auf Bestellung 419 Stücke: Lieferzeit 10-14 Tag (e) |
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IKW40N120CH7XKSA1 | Infineon Technologies |
Description: IGBT TRENCH FS 1200V 82A TO247-3Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 120 ns Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 40A Supplier Device Package: PG-TO247-3-U06 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 36ns/336ns Switching Energy: 1.69mJ (on), 920µJ (off) Gate Charge: 290 nC Part Status: Active Current - Collector (Ic) (Max): 82 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 160 A Power - Max: 330 W |
auf Bestellung 1571 Stücke: Lieferzeit 10-14 Tag (e) |
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IKZA40N120CS7XKSA1 | Infineon Technologies |
Description: IGBTPackaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 110 ns Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A Supplier Device Package: PG-TO247-4-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 28ns/176ns Switching Energy: 1.23mJ (on), 1.78mJ (off) Test Condition: 600V, 40A, 4Ohm, 15V Gate Charge: 230 nC Part Status: Active Current - Collector (Ic) (Max): 82 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 120 A Power - Max: 208 W |
Produkt ist nicht verfügbar |
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IKQ140N120CH7XKSA1 | Infineon Technologies |
Description: IGBT TRENCH FS 1200V 175A TO247Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 144 ns Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 140A Supplier Device Package: PG-TO247-3-U01 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 68ns/541ns Switching Energy: 8.84mJ (on), 3.38mJ (off) Gate Charge: 970 nC Part Status: Active Current - Collector (Ic) (Max): 175 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 560 A Power - Max: 962 W |
auf Bestellung 244 Stücke: Lieferzeit 10-14 Tag (e) |
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IKZA40N120CH7XKSA1 | Infineon Technologies |
Description: IGBT TRENCH FS 1200V 95A TO247-4Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 90 ns Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 40A Supplier Device Package: PG-TO247-4-U02 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 34ns/360ns Switching Energy: 970µJ (on), 1.01mJ (off) Gate Charge: 290 nC Part Status: Active Current - Collector (Ic) (Max): 95 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 160 A Power - Max: 330 W |
auf Bestellung 177 Stücke: Lieferzeit 10-14 Tag (e) |
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CY8C27643-24PVXI | Infineon Technologies |
Description: IC MCU 8BIT 16KB FLASH 48SSOPPackaging: Tube Package / Case: 48-BSSOP (0.295", 7.50mm Width) Mounting Type: Surface Mount Speed: 24MHz Program Memory Size: 16KB (16K x 8) RAM Size: 256 x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: M8C Data Converters: A/D 4x14b; D/A 4x9b Core Size: 8-Bit Voltage - Supply (Vcc/Vdd): 3V ~ 5.25V Connectivity: I2C, SPI, UART/USART Peripherals: POR, PWM, WDT Supplier Device Package: 48-SSOP Part Status: Active Number of I/O: 44 DigiKey Programmable: Verified |
auf Bestellung 239 Stücke: Lieferzeit 10-14 Tag (e) |
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CY8C24223A-24PVXI | Infineon Technologies |
Description: IC MCU 8BIT 4KB FLASH 20SSOPPackaging: Tube Package / Case: 20-SSOP (0.209", 5.30mm Width) Mounting Type: Surface Mount Speed: 24MHz Program Memory Size: 4KB (4K x 8) RAM Size: 256 x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: M8C Data Converters: A/D 8x14b; D/A 2x9b Core Size: 8-Bit Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.25V Connectivity: I2C, SPI, UART/USART Peripherals: POR, PWM, WDT Supplier Device Package: 20-SSOP Part Status: Active Number of I/O: 16 DigiKey Programmable: Verified |
auf Bestellung 428 Stücke: Lieferzeit 10-14 Tag (e) |
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IRL40B215 | Infineon Technologies |
Description: MOSFET N-CH 40V 120A TO220ABPackaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 2.7mOhm @ 98A, 10V Power Dissipation (Max): 143W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 100µA Supplier Device Package: TO-220AB Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 5225 pF @ 25 V |
auf Bestellung 6200 Stücke: Lieferzeit 10-14 Tag (e) |
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CY8C624ABZI-S2D04 | Infineon Technologies |
Description: IC MCU 32BIT 2MB FLASH 124VFBGAPackaging: Tray Package / Case: 124-VFBGA Mounting Type: Surface Mount Speed: 100MHz, 150MHz Program Memory Size: 2MB (2M x 8) RAM Size: 1M x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: External, Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F Data Converters: A/D 16x12b SAR, 10b Sigma-Delta; D/A 2x7/8b Core Size: 32-Bit Dual-Core Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V Connectivity: eMMC/SD/SDIO, FIFO, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART, USB Peripherals: Brown-out Detect/Reset, CapSense, I2S, LCD, LVD, POR, PWM, WDT Supplier Device Package: 124-VFBGA (9x9) Number of I/O: 100 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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TC237L32F200SACLXUMA1 | Infineon Technologies |
Description: IC MCU 32BIT 2MB FLASH 292LFBGAPackaging: Tape & Reel (TR) Package / Case: 292-LFBGA Mounting Type: Surface Mount Speed: 200MHz Program Memory Size: 2MB (2M x 8) RAM Size: 192K x 8 Operating Temperature: -40°C ~ 125°C (TA) Oscillator Type: External Program Memory Type: FLASH EEPROM Size: 128K x 8 Core Processor: TriCore™ Data Converters: A/D 24x12b Core Size: 32-Bit Single-Core Voltage - Supply (Vcc/Vdd): 3.3V Connectivity: CANbus, FlexRay, LINbus, QSPI Peripherals: DMA, WDT Supplier Device Package: PG-LFBGA-292-6 Number of I/O: 120 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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IM69D127V11XTMA1 | Infineon Technologies |
Description: MIC MEMS NC 0.142"LX0.098"WPackaging: Tape & Reel (TR) Output Type: Digital, PDM Size / Dimension: 0.142" L x 0.098" W (3.60mm x 2.50mm) Shape: Rectangular Type: MEMS (Silicon) S/N Ratio: 69dB Direction: Noise Cancelling Port Location: Bottom Height (Max): 0.039" (1.00mm) Part Status: Active Frequency Range: 20 Hz ~ 20 kHz |
auf Bestellung 10000 Stücke: Lieferzeit 10-14 Tag (e) |
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IM69D127V11XTMA1 | Infineon Technologies |
Description: MIC MEMS NC 0.142"LX0.098"WPackaging: Cut Tape (CT) Output Type: Digital, PDM Size / Dimension: 0.142" L x 0.098" W (3.60mm x 2.50mm) Shape: Rectangular Type: MEMS (Silicon) S/N Ratio: 69dB Direction: Noise Cancelling Port Location: Bottom Height (Max): 0.039" (1.00mm) Part Status: Active Frequency Range: 20 Hz ~ 20 kHz |
auf Bestellung 14446 Stücke: Lieferzeit 10-14 Tag (e) |
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| PEB4264-2TV1.1 | Infineon Technologies |
Description: DUSLIC DUAL CHANNEL SUBSCRIBER LPackaging: Bulk Package / Case: 20-SOIC (0.433", 11.00mm Width) Exposed Pad Mounting Type: Surface Mount Function: Dual Channel Subscriber Line Interface Circuit (DuSLIC) Interface: IOM-2, PCM Operating Temperature: -40°C ~ 85°C Voltage - Supply: 3.135V ~ 3.465V Supplier Device Package: P-DSO-20-5 Part Status: Active Number of Circuits: 2 |
auf Bestellung 624 Stücke: Lieferzeit 10-14 Tag (e) |
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IPD90N10S406ATMA1 | Infineon Technologies |
Description: MOSFET N-CH 100V 90A TO252-3Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 6.7mOhm @ 90A, 10V Power Dissipation (Max): 136W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 90µA Supplier Device Package: PG-TO252-3-313 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4870 pF @ 25 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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IPD90N10S406ATMA1 | Infineon Technologies |
Description: MOSFET N-CH 100V 90A TO252-3Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 6.7mOhm @ 90A, 10V Power Dissipation (Max): 136W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 90µA Supplier Device Package: PG-TO252-3-313 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4870 pF @ 25 V Qualification: AEC-Q101 |
auf Bestellung 2280 Stücke: Lieferzeit 10-14 Tag (e) |
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IRF7201PBF | Infineon Technologies |
Description: MOSFET N-CH 30V 7.3A 8SOPackaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc) Rds On (Max) @ Id, Vgs: 30mOhm @ 7.3A, 10V Power Dissipation (Max): 2.5W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 8-SO Part Status: Discontinued at Digi-Key Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 25 V |
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CY8C4125LQI-S433 | Infineon Technologies |
Description: IC MCU 32BIT 32KB FLASH 40QFNPackaging: Tray Package / Case: 40-UFQFN Exposed Pad Mounting Type: Surface Mount Speed: 24MHz Program Memory Size: 32KB (32K x 8) RAM Size: 4K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M0+ Data Converters: A/D 16x10b Slope, 16x12b SAR; D/A 2xIDAC Core Size: 32-Bit Single-Core Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT Supplier Device Package: 40-QFN (6x6) Part Status: Active Number of I/O: 34 DigiKey Programmable: Not Verified |
auf Bestellung 1964 Stücke: Lieferzeit 10-14 Tag (e) |
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| MB91F525DWDPMC-GSE2 | Infineon Technologies |
Description: IC MICROCONTROLLER |
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| MB91F525DSCPMC-GSE2 | Infineon Technologies |
Description: IC MICROCONTROLLER |
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CY91F525KSDPMC1-GSE2 | Infineon Technologies |
Description: IC MCU 32BIT 832KB FLASH 144LQFP Packaging: Tray Package / Case: 144-LQFP Mounting Type: Surface Mount Speed: 80MHz Program Memory Size: 832KB (832K x 8) RAM Size: 104K x 8 Operating Temperature: -40°C ~ 105°C (TA) Oscillator Type: External Program Memory Type: FLASH EEPROM Size: 64K x 8 Core Processor: FR81S Data Converters: A/D 48x12b SAR; D/A 2x8b Core Size: 32-Bit Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Connectivity: CANbus, CSIO, EBI/EMI, I2C, LINbus, SPI, UART/USART Peripherals: DMA, LVD, POR, PWM, WDT Supplier Device Package: 144-LQFP (16x16) Part Status: Last Time Buy Number of I/O: 120 DigiKey Programmable: Not Verified |
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| CY91F525KHEPMC1-GSE1 | Infineon Technologies |
Description: IC MCU 32BIT 832KB FLASH 144LQFP Packaging: Tray Package / Case: 144-LQFP Mounting Type: Surface Mount Speed: 80MHz Program Memory Size: 832KB (832K x 8) RAM Size: 104K x 8 Operating Temperature: -40°C ~ 105°C (TA) Oscillator Type: External Program Memory Type: FLASH EEPROM Size: 64K x 8 Core Processor: FR81S Data Converters: A/D 48x12b SAR; D/A 2x8b Core Size: 32-Bit Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Connectivity: CANbus, CSIO, EBI/EMI, I²C, LINbus, SPI, UART/USART Peripherals: DMA, LVD, POR, PWM, WDT Supplier Device Package: 144-LQFP (16x16) Part Status: Last Time Buy Number of I/O: 120 DigiKey Programmable: Not Verified |
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| 8 611 200 915 | Infineon Technologies |
Description: FLASH MEMORY Packaging: Tray Part Status: Discontinued at Digi-Key DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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| 8 611 200 943 | Infineon Technologies |
Description: IC Packaging: Bulk Part Status: Discontinued at Digi-Key DigiKey Programmable: Not Verified |
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| 8 611 200 914 | Infineon Technologies |
Description: IC Packaging: Bulk Part Status: Discontinued at Digi-Key DigiKey Programmable: Not Verified |
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| 8 611 200 975 | Infineon Technologies |
Description: IC Packaging: Bulk Part Status: Discontinued at Digi-Key DigiKey Programmable: Not Verified |
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1ED3140MU12FXUMA1 | Infineon Technologies |
Description: ISOLATED DRIVERPackaging: Tape & Reel (TR) Part Status: Active |
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1ED3140MU12FXUMA1 | Infineon Technologies |
Description: ISOLATED DRIVERPackaging: Cut Tape (CT) Part Status: Active |
auf Bestellung 1420 Stücke: Lieferzeit 10-14 Tag (e) |
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1ED3141MU12FXUMA1 | Infineon Technologies |
Description: ISOLATED DRIVERPackaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
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1ED3141MU12FXUMA1 | Infineon Technologies |
Description: ISOLATED DRIVERPackaging: Cut Tape (CT) |
auf Bestellung 1418 Stücke: Lieferzeit 10-14 Tag (e) |
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1ED3142MU12FXUMA1 | Infineon Technologies |
Description: ISOLATED DRIVERPackaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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1ED3142MU12FXUMA1 | Infineon Technologies |
Description: ISOLATED DRIVERPackaging: Cut Tape (CT) |
auf Bestellung 947 Stücke: Lieferzeit 10-14 Tag (e) |
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IAUC120N06S5N011ATMA1 | Infineon Technologies |
Description: MOSFET_)40V 60V)Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 310A (Tj) Rds On (Max) @ Id, Vgs: 1.12mOhm @ 60A, 10V Power Dissipation (Max): 188W (Tc) Vgs(th) (Max) @ Id: 3.4V @ 130µA Supplier Device Package: PG-TDSON-8-53 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 137 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9822 pF @ 30 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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IAUC120N06S5L022ATMA1 | Infineon Technologies |
Description: MOSFET_)40V 60V)Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 170A (Tj) Rds On (Max) @ Id, Vgs: 2.2mOhm @ 60A, 10V Power Dissipation (Max): 136W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 65µA Supplier Device Package: PG-TDSON-8-34 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5651 pF @ 30 V Qualification: AEC-Q101 |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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IAUC120N06S5L011ATMA1 | Infineon Technologies |
Description: MOSFET_)40V 60V)Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 310A (Tj) Rds On (Max) @ Id, Vgs: 1.1mOhm @ 60A, 10V Power Dissipation (Max): 188W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 130µA Supplier Device Package: PG-TDSON-8-53 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11400 pF @ 30 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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IAUC120N06S5N032ATMA1 | Infineon Technologies |
Description: MOSFET_)40V 60V)Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tj) Rds On (Max) @ Id, Vgs: 3.23mOhm @ 60A, 10V Power Dissipation (Max): 94W (Tc) Vgs(th) (Max) @ Id: 3.4V @ 44µA Supplier Device Package: PG-TDSON-8-34 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3446 pF @ 30 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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IAUC120N06S5L015ATMA1 | Infineon Technologies |
Description: MOSFET_)40V 60V)Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 235A (Tj) Rds On (Max) @ Id, Vgs: 1.5mOhm @ 60A, 10V Power Dissipation (Max): 167W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 94µA Supplier Device Package: PG-TDSON-8-43 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8193 pF @ 30 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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IAUC120N06S5N022ATMA1 | Infineon Technologies |
Description: MOSFET_)40V 60V)Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 170A (Tj) Rds On (Max) @ Id, Vgs: 2.24mOhm @ 60A, 10V Power Dissipation (Max): 136W (Tc) Vgs(th) (Max) @ Id: 3.4V @ 65µA Supplier Device Package: PG-TDSON-8-34 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4930 pF @ 30 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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IPB024N08N5ATMA1 | Infineon Technologies |
Description: MOSFET N-CH 80V 120A D2PAKPackaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 2.4mOhm @ 100A, 10V Power Dissipation (Max): 214W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 154µA Supplier Device Package: PG-TO263-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 123 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8970 pF @ 40 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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IPB024N08N5ATMA1 | Infineon Technologies |
Description: MOSFET N-CH 80V 120A D2PAKPackaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 2.4mOhm @ 100A, 10V Power Dissipation (Max): 214W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 154µA Supplier Device Package: PG-TO263-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 123 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8970 pF @ 40 V |
auf Bestellung 990 Stücke: Lieferzeit 10-14 Tag (e) |
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CY2304SXC-1 | Infineon Technologies |
Description: IC FANOUT BUFFER 8SOICPackaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Output: Clock Frequency - Max: 133.3MHz Type: Fanout Buffer (Distribution), Zero Delay Buffer Input: Clock Operating Temperature: 0°C ~ 70°C Voltage - Supply: 3V ~ 3.6V Ratio - Input:Output: 1:4 Differential - Input:Output: No/No Supplier Device Package: 8-SOIC PLL: Yes Divider/Multiplier: No/No Part Status: Active Number of Circuits: 1 DigiKey Programmable: Not Verified |
auf Bestellung 1638 Stücke: Lieferzeit 10-14 Tag (e) |
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PEB2466HV1.4GD | Infineon Technologies |
Description: SICOFI CODEC FILTER Packaging: Bulk Part Status: Active |
auf Bestellung 2550 Stücke: Lieferzeit 10-14 Tag (e) |
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| PEB2466HV1.3 | Infineon Technologies |
Description: SICOFI CODEC FILTER Packaging: Bulk Part Status: Active |
auf Bestellung 118 Stücke: Lieferzeit 10-14 Tag (e) |
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PEB2466HV1.4 | Infineon Technologies |
Description: SICOFI CODEC FILTER Packaging: Bulk Part Status: Active |
auf Bestellung 3400 Stücke: Lieferzeit 10-14 Tag (e) |
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| PEB2466/SICFI | Infineon Technologies | Description: SICOFI CODEC FILTER |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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IRF9392PBF | Infineon Technologies |
Description: MOSFET P-CH 30V 9.8A 8SOPackaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 9.8A (Ta) Rds On (Max) @ Id, Vgs: 12.1mOhm @ 7.8A, 20V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 2.4V @ 25µA Supplier Device Package: 8-SO Drive Voltage (Max Rds On, Min Rds On): 10V, 20V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1270 pF @ 25 V |
Produkt ist nicht verfügbar |
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CY62138FV30LL-45ZAXA | Infineon Technologies |
Description: IC SRAM 2MBIT PARALLEL 32STSOPPackaging: Tray Package / Case: 32-TFSOP (0.465", 11.80mm Width) Mounting Type: Surface Mount Memory Size: 2Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.2V ~ 3.6V Technology: SRAM - Asynchronous Memory Format: SRAM Supplier Device Package: 32-sTSOP Part Status: Active Write Cycle Time - Word, Page: 45ns Memory Interface: Parallel Access Time: 45 ns Memory Organization: 256K x 8 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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IM68A130V01XTMA1 | Infineon Technologies |
Description: MIC MEMS ANLG NC -38DBPackaging: Tape & Reel (TR) Output Type: Analog Size / Dimension: 0.132" L x 0.098" W (3.35mm x 2.50mm) Sensitivity: -38dB @ 130dB SPL Shape: Rectangular Type: MEMS (Silicon) S/N Ratio: 68dB Termination: Solder Pads Direction: Noise Cancelling Port Location: Top Height (Max): 0.039" (0.98mm) Part Status: Active Current - Supply: 110 µA Voltage Range: 2.4 V ~ 3.6 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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IM68A130V01XTMA1 | Infineon Technologies |
Description: MIC MEMS ANLG NC -38DBPackaging: Cut Tape (CT) Output Type: Analog Size / Dimension: 0.132" L x 0.098" W (3.35mm x 2.50mm) Sensitivity: -38dB @ 130dB SPL Shape: Rectangular Type: MEMS (Silicon) S/N Ratio: 68dB Termination: Solder Pads Direction: Noise Cancelling Port Location: Top Height (Max): 0.039" (0.98mm) Part Status: Active Current - Supply: 110 µA Voltage Range: 2.4 V ~ 3.6 V |
auf Bestellung 3079 Stücke: Lieferzeit 10-14 Tag (e) |
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ISC240P06LMATMA1 | Infineon Technologies |
Description: MOSFET P-CH 60V 59A TDSON-8 FLPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 59A (Tc) Rds On (Max) @ Id, Vgs: 24mOhm @ 40A, 10V Power Dissipation (Max): 188W (Ta) Vgs(th) (Max) @ Id: 2V @ 2.34A Supplier Device Package: PG-TDSON-8 FL Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 136 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 30 V |
auf Bestellung 3819 Stücke: Lieferzeit 10-14 Tag (e) |
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| CY90F462APMC-G-UNE1 |
Hersteller: Infineon Technologies
Description: IC MCU 16BIT 64KB FLASH 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-16LX
Data Converters: A/D 8x8/10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 64-LQFP (12x12)
Number of I/O: 51
DigiKey Programmable: Not Verified
Description: IC MCU 16BIT 64KB FLASH 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-16LX
Data Converters: A/D 8x8/10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 64-LQFP (12x12)
Number of I/O: 51
DigiKey Programmable: Not Verified
auf Bestellung 1190 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 18.81 EUR |
| 10+ | 14.73 EUR |
| 25+ | 13.71 EUR |
| 80+ | 12.74 EUR |
| 230+ | 12.1 EUR |
| 440+ | 11.79 EUR |
| 1190+ | 11.41 EUR |
| CY8C6137BZI-F14 |
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Hersteller: Infineon Technologies
Description: IC MCU 32BIT 1MB FLASH 124BGA
Packaging: Tray
Package / Case: 124-VFBGA
Mounting Type: Surface Mount
Speed: 150MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 288K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 32K x 8
Core Processor: ARM® Cortex®-M4
Data Converters: A/D 8x12b SAR; D/A 1x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
Connectivity: I2C, LINbus, QSPI, SPI, UART/USART, USB
Peripherals: Brown-out Detect/Reset, Cap Sense, DMA, I2S, POR, PWM, WDT
Supplier Device Package: 124-VFBGA (9x9)
Part Status: Active
Number of I/O: 104
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 1MB FLASH 124BGA
Packaging: Tray
Package / Case: 124-VFBGA
Mounting Type: Surface Mount
Speed: 150MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 288K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 32K x 8
Core Processor: ARM® Cortex®-M4
Data Converters: A/D 8x12b SAR; D/A 1x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
Connectivity: I2C, LINbus, QSPI, SPI, UART/USART, USB
Peripherals: Brown-out Detect/Reset, Cap Sense, DMA, I2S, POR, PWM, WDT
Supplier Device Package: 124-VFBGA (9x9)
Part Status: Active
Number of I/O: 104
DigiKey Programmable: Not Verified
auf Bestellung 127 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2+ | 14.31 EUR |
| 10+ | 11.15 EUR |
| 25+ | 10.36 EUR |
| 100+ | 9.49 EUR |
| PVG612AS-TPBF |
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Hersteller: Infineon Technologies
Description: SSR RELAY SPST-NO 2A 0-60V
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.2VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 85°C
Termination Style: Gull Wing
Load Current: 2 A
Approval Agency: UL
Supplier Device Package: 6-SMT
Part Status: Active
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 100 mOhms
Description: SSR RELAY SPST-NO 2A 0-60V
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.2VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 85°C
Termination Style: Gull Wing
Load Current: 2 A
Approval Agency: UL
Supplier Device Package: 6-SMT
Part Status: Active
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 100 mOhms
auf Bestellung 750 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 750+ | 10.33 EUR |
| PVG612AS-TPBF |
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Hersteller: Infineon Technologies
Description: SSR RELAY SPST-NO 2A 0-60V
Packaging: Cut Tape (CT)
Package / Case: 6-SMD (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.2VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 85°C
Termination Style: Gull Wing
Load Current: 2 A
Approval Agency: UL
Supplier Device Package: 6-SMT
Part Status: Active
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 100 mOhms
Description: SSR RELAY SPST-NO 2A 0-60V
Packaging: Cut Tape (CT)
Package / Case: 6-SMD (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.2VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 85°C
Termination Style: Gull Wing
Load Current: 2 A
Approval Agency: UL
Supplier Device Package: 6-SMT
Part Status: Active
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 100 mOhms
auf Bestellung 1386 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2+ | 14.41 EUR |
| 10+ | 12.84 EUR |
| 25+ | 12.26 EUR |
| 50+ | 11.84 EUR |
| 100+ | 11.44 EUR |
| 250+ | 10.92 EUR |
| S29GL512T10TFI033 |
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Hersteller: Infineon Technologies
Description: IC FLASH 512MBIT PARALLEL 56TSOP
Description: IC FLASH 512MBIT PARALLEL 56TSOP
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| S29GL512T10TFI030 |
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Hersteller: Infineon Technologies
Description: IC FLASH 512MBIT PARALLEL 56TSOP
Description: IC FLASH 512MBIT PARALLEL 56TSOP
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| S29GL512T10TFI043 |
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Hersteller: Infineon Technologies
Description: IC FLASH 512MBIT PARALLEL 56TSOP
Description: IC FLASH 512MBIT PARALLEL 56TSOP
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SAF-XC866L-2FRI BE |
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Hersteller: Infineon Technologies
Description: IC MCU 8BIT 8KB FLASH 38TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 38-TFSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 86MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 768 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: XC800
Data Converters: A/D 8x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: LINbus, SSI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: PG-TSSOP-38
Number of I/O: 19
DigiKey Programmable: Not Verified
Description: IC MCU 8BIT 8KB FLASH 38TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 38-TFSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 86MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 768 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: XC800
Data Converters: A/D 8x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: LINbus, SSI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: PG-TSSOP-38
Number of I/O: 19
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| XC8664FRIBEFXUMA1 |
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Hersteller: Infineon Technologies
Description: IC MCU 8BIT 16KB FLASH 38TSSOP
Packaging: Cut Tape (CT)
Package / Case: 38-TFSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 86MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 768 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: XC800
Data Converters: A/D 8x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: SSI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: PG-TSSOP-38
Number of I/O: 19
DigiKey Programmable: Not Verified
Description: IC MCU 8BIT 16KB FLASH 38TSSOP
Packaging: Cut Tape (CT)
Package / Case: 38-TFSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 86MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 768 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: XC800
Data Converters: A/D 8x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: SSI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: PG-TSSOP-38
Number of I/O: 19
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| AUIRF2804STRL |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 195A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 75A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6450 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 40V 195A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 75A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6450 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen
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| AUIRF2804STRL |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 195A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 75A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6450 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 40V 195A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 75A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6450 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen
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| IKY140N120CH7XKSA1 |
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Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 1200V 232A TO247
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 101 ns
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 140A
Supplier Device Package: PG-TO247-4-U10
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 50ns/407ns
Switching Energy: 2.64mJ (on), 3.9mJ (off)
Gate Charge: 1032 nC
Part Status: Active
Current - Collector (Ic) (Max): 232 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 560 A
Power - Max: 962 W
Description: IGBT TRENCH FS 1200V 232A TO247
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 101 ns
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 140A
Supplier Device Package: PG-TO247-4-U10
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 50ns/407ns
Switching Energy: 2.64mJ (on), 3.9mJ (off)
Gate Charge: 1032 nC
Part Status: Active
Current - Collector (Ic) (Max): 232 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 560 A
Power - Max: 962 W
auf Bestellung 419 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 19.68 EUR |
| 30+ | 11.91 EUR |
| 120+ | 10.21 EUR |
| IKW40N120CH7XKSA1 |
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Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 1200V 82A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 120 ns
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 40A
Supplier Device Package: PG-TO247-3-U06
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 36ns/336ns
Switching Energy: 1.69mJ (on), 920µJ (off)
Gate Charge: 290 nC
Part Status: Active
Current - Collector (Ic) (Max): 82 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 330 W
Description: IGBT TRENCH FS 1200V 82A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 120 ns
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 40A
Supplier Device Package: PG-TO247-3-U06
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 36ns/336ns
Switching Energy: 1.69mJ (on), 920µJ (off)
Gate Charge: 290 nC
Part Status: Active
Current - Collector (Ic) (Max): 82 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 330 W
auf Bestellung 1571 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2+ | 9.94 EUR |
| 30+ | 5.68 EUR |
| 120+ | 4.75 EUR |
| 510+ | 4.06 EUR |
| 1020+ | 4 EUR |
| IKZA40N120CS7XKSA1 |
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Hersteller: Infineon Technologies
Description: IGBT
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 110 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A
Supplier Device Package: PG-TO247-4-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 28ns/176ns
Switching Energy: 1.23mJ (on), 1.78mJ (off)
Test Condition: 600V, 40A, 4Ohm, 15V
Gate Charge: 230 nC
Part Status: Active
Current - Collector (Ic) (Max): 82 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 208 W
Description: IGBT
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 110 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A
Supplier Device Package: PG-TO247-4-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 28ns/176ns
Switching Energy: 1.23mJ (on), 1.78mJ (off)
Test Condition: 600V, 40A, 4Ohm, 15V
Gate Charge: 230 nC
Part Status: Active
Current - Collector (Ic) (Max): 82 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 208 W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IKQ140N120CH7XKSA1 |
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Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 1200V 175A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 144 ns
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 140A
Supplier Device Package: PG-TO247-3-U01
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 68ns/541ns
Switching Energy: 8.84mJ (on), 3.38mJ (off)
Gate Charge: 970 nC
Part Status: Active
Current - Collector (Ic) (Max): 175 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 560 A
Power - Max: 962 W
Description: IGBT TRENCH FS 1200V 175A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 144 ns
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 140A
Supplier Device Package: PG-TO247-3-U01
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 68ns/541ns
Switching Energy: 8.84mJ (on), 3.38mJ (off)
Gate Charge: 970 nC
Part Status: Active
Current - Collector (Ic) (Max): 175 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 560 A
Power - Max: 962 W
auf Bestellung 244 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 19.59 EUR |
| 30+ | 11.85 EUR |
| 120+ | 10.15 EUR |
| IKZA40N120CH7XKSA1 |
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Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 1200V 95A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 90 ns
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 40A
Supplier Device Package: PG-TO247-4-U02
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 34ns/360ns
Switching Energy: 970µJ (on), 1.01mJ (off)
Gate Charge: 290 nC
Part Status: Active
Current - Collector (Ic) (Max): 95 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 330 W
Description: IGBT TRENCH FS 1200V 95A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 90 ns
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 40A
Supplier Device Package: PG-TO247-4-U02
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 34ns/360ns
Switching Energy: 970µJ (on), 1.01mJ (off)
Gate Charge: 290 nC
Part Status: Active
Current - Collector (Ic) (Max): 95 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 330 W
auf Bestellung 177 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2+ | 10.82 EUR |
| 30+ | 6.23 EUR |
| 120+ | 5.22 EUR |
| CY8C27643-24PVXI |
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Hersteller: Infineon Technologies
Description: IC MCU 8BIT 16KB FLASH 48SSOP
Packaging: Tube
Package / Case: 48-BSSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 256 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Data Converters: A/D 4x14b; D/A 4x9b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.25V
Connectivity: I2C, SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 48-SSOP
Part Status: Active
Number of I/O: 44
DigiKey Programmable: Verified
Description: IC MCU 8BIT 16KB FLASH 48SSOP
Packaging: Tube
Package / Case: 48-BSSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 256 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Data Converters: A/D 4x14b; D/A 4x9b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.25V
Connectivity: I2C, SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 48-SSOP
Part Status: Active
Number of I/O: 44
DigiKey Programmable: Verified
auf Bestellung 239 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 21.16 EUR |
| 10+ | 16.64 EUR |
| 30+ | 15.33 EUR |
| 120+ | 14.15 EUR |
| CY8C24223A-24PVXI |
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Hersteller: Infineon Technologies
Description: IC MCU 8BIT 4KB FLASH 20SSOP
Packaging: Tube
Package / Case: 20-SSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 4KB (4K x 8)
RAM Size: 256 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Data Converters: A/D 8x14b; D/A 2x9b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.25V
Connectivity: I2C, SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 20-SSOP
Part Status: Active
Number of I/O: 16
DigiKey Programmable: Verified
Description: IC MCU 8BIT 4KB FLASH 20SSOP
Packaging: Tube
Package / Case: 20-SSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 4KB (4K x 8)
RAM Size: 256 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Data Converters: A/D 8x14b; D/A 2x9b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.25V
Connectivity: I2C, SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 20-SSOP
Part Status: Active
Number of I/O: 16
DigiKey Programmable: Verified
auf Bestellung 428 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3+ | 7.59 EUR |
| 10+ | 5.77 EUR |
| 66+ | 4.95 EUR |
| 132+ | 4.74 EUR |
| 264+ | 4.57 EUR |
| IRL40B215 |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 120A TO220AB
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 98A, 10V
Power Dissipation (Max): 143W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 100µA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 5225 pF @ 25 V
Description: MOSFET N-CH 40V 120A TO220AB
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 98A, 10V
Power Dissipation (Max): 143W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 100µA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 5225 pF @ 25 V
auf Bestellung 6200 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 205+ | 2.22 EUR |
| CY8C624ABZI-S2D04 |
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Hersteller: Infineon Technologies
Description: IC MCU 32BIT 2MB FLASH 124VFBGA
Packaging: Tray
Package / Case: 124-VFBGA
Mounting Type: Surface Mount
Speed: 100MHz, 150MHz
Program Memory Size: 2MB (2M x 8)
RAM Size: 1M x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
Data Converters: A/D 16x12b SAR, 10b Sigma-Delta; D/A 2x7/8b
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
Connectivity: eMMC/SD/SDIO, FIFO, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART, USB
Peripherals: Brown-out Detect/Reset, CapSense, I2S, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 124-VFBGA (9x9)
Number of I/O: 100
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 2MB FLASH 124VFBGA
Packaging: Tray
Package / Case: 124-VFBGA
Mounting Type: Surface Mount
Speed: 100MHz, 150MHz
Program Memory Size: 2MB (2M x 8)
RAM Size: 1M x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
Data Converters: A/D 16x12b SAR, 10b Sigma-Delta; D/A 2x7/8b
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
Connectivity: eMMC/SD/SDIO, FIFO, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART, USB
Peripherals: Brown-out Detect/Reset, CapSense, I2S, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 124-VFBGA (9x9)
Number of I/O: 100
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TC237L32F200SACLXUMA1 |
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Hersteller: Infineon Technologies
Description: IC MCU 32BIT 2MB FLASH 292LFBGA
Packaging: Tape & Reel (TR)
Package / Case: 292-LFBGA
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 2MB (2M x 8)
RAM Size: 192K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: TriCore™
Data Converters: A/D 24x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 3.3V
Connectivity: CANbus, FlexRay, LINbus, QSPI
Peripherals: DMA, WDT
Supplier Device Package: PG-LFBGA-292-6
Number of I/O: 120
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 2MB FLASH 292LFBGA
Packaging: Tape & Reel (TR)
Package / Case: 292-LFBGA
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 2MB (2M x 8)
RAM Size: 192K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: TriCore™
Data Converters: A/D 24x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 3.3V
Connectivity: CANbus, FlexRay, LINbus, QSPI
Peripherals: DMA, WDT
Supplier Device Package: PG-LFBGA-292-6
Number of I/O: 120
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IM69D127V11XTMA1 |
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Hersteller: Infineon Technologies
Description: MIC MEMS NC 0.142"LX0.098"W
Packaging: Tape & Reel (TR)
Output Type: Digital, PDM
Size / Dimension: 0.142" L x 0.098" W (3.60mm x 2.50mm)
Shape: Rectangular
Type: MEMS (Silicon)
S/N Ratio: 69dB
Direction: Noise Cancelling
Port Location: Bottom
Height (Max): 0.039" (1.00mm)
Part Status: Active
Frequency Range: 20 Hz ~ 20 kHz
Description: MIC MEMS NC 0.142"LX0.098"W
Packaging: Tape & Reel (TR)
Output Type: Digital, PDM
Size / Dimension: 0.142" L x 0.098" W (3.60mm x 2.50mm)
Shape: Rectangular
Type: MEMS (Silicon)
S/N Ratio: 69dB
Direction: Noise Cancelling
Port Location: Bottom
Height (Max): 0.039" (1.00mm)
Part Status: Active
Frequency Range: 20 Hz ~ 20 kHz
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 5000+ | 1.81 EUR |
| IM69D127V11XTMA1 |
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Hersteller: Infineon Technologies
Description: MIC MEMS NC 0.142"LX0.098"W
Packaging: Cut Tape (CT)
Output Type: Digital, PDM
Size / Dimension: 0.142" L x 0.098" W (3.60mm x 2.50mm)
Shape: Rectangular
Type: MEMS (Silicon)
S/N Ratio: 69dB
Direction: Noise Cancelling
Port Location: Bottom
Height (Max): 0.039" (1.00mm)
Part Status: Active
Frequency Range: 20 Hz ~ 20 kHz
Description: MIC MEMS NC 0.142"LX0.098"W
Packaging: Cut Tape (CT)
Output Type: Digital, PDM
Size / Dimension: 0.142" L x 0.098" W (3.60mm x 2.50mm)
Shape: Rectangular
Type: MEMS (Silicon)
S/N Ratio: 69dB
Direction: Noise Cancelling
Port Location: Bottom
Height (Max): 0.039" (1.00mm)
Part Status: Active
Frequency Range: 20 Hz ~ 20 kHz
auf Bestellung 14446 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 6+ | 3.41 EUR |
| 10+ | 2.78 EUR |
| 25+ | 2.57 EUR |
| 50+ | 2.41 EUR |
| 100+ | 2.27 EUR |
| 250+ | 2.09 EUR |
| 500+ | 1.97 EUR |
| 1000+ | 1.86 EUR |
| PEB4264-2TV1.1 |
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Hersteller: Infineon Technologies
Description: DUSLIC DUAL CHANNEL SUBSCRIBER L
Packaging: Bulk
Package / Case: 20-SOIC (0.433", 11.00mm Width) Exposed Pad
Mounting Type: Surface Mount
Function: Dual Channel Subscriber Line Interface Circuit (DuSLIC)
Interface: IOM-2, PCM
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.135V ~ 3.465V
Supplier Device Package: P-DSO-20-5
Part Status: Active
Number of Circuits: 2
Description: DUSLIC DUAL CHANNEL SUBSCRIBER L
Packaging: Bulk
Package / Case: 20-SOIC (0.433", 11.00mm Width) Exposed Pad
Mounting Type: Surface Mount
Function: Dual Channel Subscriber Line Interface Circuit (DuSLIC)
Interface: IOM-2, PCM
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.135V ~ 3.465V
Supplier Device Package: P-DSO-20-5
Part Status: Active
Number of Circuits: 2
auf Bestellung 624 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 64+ | 7.89 EUR |
| IPD90N10S406ATMA1 |
![]() |
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 90A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 90A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 90µA
Supplier Device Package: PG-TO252-3-313
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4870 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 100V 90A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 90A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 90µA
Supplier Device Package: PG-TO252-3-313
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4870 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| IPD90N10S406ATMA1 |
![]() |
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 90A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 90A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 90µA
Supplier Device Package: PG-TO252-3-313
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4870 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 100V 90A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 90A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 90µA
Supplier Device Package: PG-TO252-3-313
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4870 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 2280 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 4+ | 4.63 EUR |
| 10+ | 2.99 EUR |
| 100+ | 2.06 EUR |
| 500+ | 1.66 EUR |
| 1000+ | 1.54 EUR |
| IRF7201PBF | ![]() |
![]() |
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 7.3A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 7.3A, 10V
Power Dissipation (Max): 2.5W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 25 V
Description: MOSFET N-CH 30V 7.3A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 7.3A, 10V
Power Dissipation (Max): 2.5W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| CY8C4125LQI-S433 |
![]() |
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 32KB FLASH 40QFN
Packaging: Tray
Package / Case: 40-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b Slope, 16x12b SAR; D/A 2xIDAC
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 40-QFN (6x6)
Part Status: Active
Number of I/O: 34
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 32KB FLASH 40QFN
Packaging: Tray
Package / Case: 40-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b Slope, 16x12b SAR; D/A 2xIDAC
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 40-QFN (6x6)
Part Status: Active
Number of I/O: 34
DigiKey Programmable: Not Verified
auf Bestellung 1964 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 4+ | 5.21 EUR |
| 10+ | 3.94 EUR |
| 25+ | 3.62 EUR |
| 100+ | 3.26 EUR |
| 490+ | 3.04 EUR |
| MB91F525DWDPMC-GSE2 |
![]() |
Hersteller: Infineon Technologies
Description: IC MICROCONTROLLER
Description: IC MICROCONTROLLER
Produkt ist nicht verfügbar
Im Einkaufswagen
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| MB91F525DSCPMC-GSE2 |
![]() |
Hersteller: Infineon Technologies
Description: IC MICROCONTROLLER
Description: IC MICROCONTROLLER
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| CY91F525KSDPMC1-GSE2 |
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 832KB FLASH 144LQFP
Packaging: Tray
Package / Case: 144-LQFP
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 832KB (832K x 8)
RAM Size: 104K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: FR81S
Data Converters: A/D 48x12b SAR; D/A 2x8b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, I2C, LINbus, SPI, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 144-LQFP (16x16)
Part Status: Last Time Buy
Number of I/O: 120
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 832KB FLASH 144LQFP
Packaging: Tray
Package / Case: 144-LQFP
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 832KB (832K x 8)
RAM Size: 104K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: FR81S
Data Converters: A/D 48x12b SAR; D/A 2x8b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, I2C, LINbus, SPI, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 144-LQFP (16x16)
Part Status: Last Time Buy
Number of I/O: 120
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| CY91F525KHEPMC1-GSE1 |
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 832KB FLASH 144LQFP
Packaging: Tray
Package / Case: 144-LQFP
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 832KB (832K x 8)
RAM Size: 104K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: FR81S
Data Converters: A/D 48x12b SAR; D/A 2x8b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, I²C, LINbus, SPI, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 144-LQFP (16x16)
Part Status: Last Time Buy
Number of I/O: 120
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 832KB FLASH 144LQFP
Packaging: Tray
Package / Case: 144-LQFP
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 832KB (832K x 8)
RAM Size: 104K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: FR81S
Data Converters: A/D 48x12b SAR; D/A 2x8b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, I²C, LINbus, SPI, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 144-LQFP (16x16)
Part Status: Last Time Buy
Number of I/O: 120
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 8 611 200 915 |
Hersteller: Infineon Technologies
Description: FLASH MEMORY
Packaging: Tray
Part Status: Discontinued at Digi-Key
DigiKey Programmable: Not Verified
Description: FLASH MEMORY
Packaging: Tray
Part Status: Discontinued at Digi-Key
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 8 611 200 943 |
Hersteller: Infineon Technologies
Description: IC
Packaging: Bulk
Part Status: Discontinued at Digi-Key
DigiKey Programmable: Not Verified
Description: IC
Packaging: Bulk
Part Status: Discontinued at Digi-Key
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 8 611 200 914 |
Hersteller: Infineon Technologies
Description: IC
Packaging: Bulk
Part Status: Discontinued at Digi-Key
DigiKey Programmable: Not Verified
Description: IC
Packaging: Bulk
Part Status: Discontinued at Digi-Key
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 8 611 200 975 |
Hersteller: Infineon Technologies
Description: IC
Packaging: Bulk
Part Status: Discontinued at Digi-Key
DigiKey Programmable: Not Verified
Description: IC
Packaging: Bulk
Part Status: Discontinued at Digi-Key
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 1ED3140MU12FXUMA1 |
![]() |
Hersteller: Infineon Technologies
Description: ISOLATED DRIVER
Packaging: Tape & Reel (TR)
Part Status: Active
Description: ISOLATED DRIVER
Packaging: Tape & Reel (TR)
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 1ED3140MU12FXUMA1 |
![]() |
Hersteller: Infineon Technologies
Description: ISOLATED DRIVER
Packaging: Cut Tape (CT)
Part Status: Active
Description: ISOLATED DRIVER
Packaging: Cut Tape (CT)
Part Status: Active
auf Bestellung 1420 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 7+ | 2.64 EUR |
| 10+ | 1.93 EUR |
| 25+ | 1.75 EUR |
| 100+ | 1.56 EUR |
| 250+ | 1.46 EUR |
| 500+ | 1.41 EUR |
| 1000+ | 1.36 EUR |
| 1ED3141MU12FXUMA1 |
![]() |
auf Bestellung 1418 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 7+ | 2.64 EUR |
| 10+ | 1.93 EUR |
| 25+ | 1.75 EUR |
| 100+ | 1.56 EUR |
| 250+ | 1.46 EUR |
| 500+ | 1.41 EUR |
| 1000+ | 1.36 EUR |
| 1ED3142MU12FXUMA1 |
![]() |
auf Bestellung 947 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 7+ | 2.64 EUR |
| 10+ | 1.93 EUR |
| 25+ | 1.75 EUR |
| 100+ | 1.56 EUR |
| 250+ | 1.46 EUR |
| 500+ | 1.41 EUR |
| IAUC120N06S5N011ATMA1 |
![]() |
Hersteller: Infineon Technologies
Description: MOSFET_)40V 60V)
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 310A (Tj)
Rds On (Max) @ Id, Vgs: 1.12mOhm @ 60A, 10V
Power Dissipation (Max): 188W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 130µA
Supplier Device Package: PG-TDSON-8-53
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 137 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9822 pF @ 30 V
Qualification: AEC-Q101
Description: MOSFET_)40V 60V)
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 310A (Tj)
Rds On (Max) @ Id, Vgs: 1.12mOhm @ 60A, 10V
Power Dissipation (Max): 188W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 130µA
Supplier Device Package: PG-TDSON-8-53
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 137 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9822 pF @ 30 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IAUC120N06S5L022ATMA1 |
![]() |
Hersteller: Infineon Technologies
Description: MOSFET_)40V 60V)
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170A (Tj)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 60A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 65µA
Supplier Device Package: PG-TDSON-8-34
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5651 pF @ 30 V
Qualification: AEC-Q101
Description: MOSFET_)40V 60V)
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170A (Tj)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 60A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 65µA
Supplier Device Package: PG-TDSON-8-34
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5651 pF @ 30 V
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 5000+ | 0.97 EUR |
| IAUC120N06S5L011ATMA1 |
![]() |
Hersteller: Infineon Technologies
Description: MOSFET_)40V 60V)
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 310A (Tj)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 60A, 10V
Power Dissipation (Max): 188W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 130µA
Supplier Device Package: PG-TDSON-8-53
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11400 pF @ 30 V
Qualification: AEC-Q101
Description: MOSFET_)40V 60V)
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 310A (Tj)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 60A, 10V
Power Dissipation (Max): 188W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 130µA
Supplier Device Package: PG-TDSON-8-53
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11400 pF @ 30 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IAUC120N06S5N032ATMA1 |
![]() |
Hersteller: Infineon Technologies
Description: MOSFET_)40V 60V)
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tj)
Rds On (Max) @ Id, Vgs: 3.23mOhm @ 60A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 44µA
Supplier Device Package: PG-TDSON-8-34
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3446 pF @ 30 V
Qualification: AEC-Q101
Description: MOSFET_)40V 60V)
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tj)
Rds On (Max) @ Id, Vgs: 3.23mOhm @ 60A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 44µA
Supplier Device Package: PG-TDSON-8-34
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3446 pF @ 30 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IAUC120N06S5L015ATMA1 |
![]() |
Hersteller: Infineon Technologies
Description: MOSFET_)40V 60V)
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 235A (Tj)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 60A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 94µA
Supplier Device Package: PG-TDSON-8-43
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8193 pF @ 30 V
Qualification: AEC-Q101
Description: MOSFET_)40V 60V)
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 235A (Tj)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 60A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 94µA
Supplier Device Package: PG-TDSON-8-43
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8193 pF @ 30 V
Qualification: AEC-Q101
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| IAUC120N06S5N022ATMA1 |
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Hersteller: Infineon Technologies
Description: MOSFET_)40V 60V)
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170A (Tj)
Rds On (Max) @ Id, Vgs: 2.24mOhm @ 60A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 65µA
Supplier Device Package: PG-TDSON-8-34
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4930 pF @ 30 V
Qualification: AEC-Q101
Description: MOSFET_)40V 60V)
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170A (Tj)
Rds On (Max) @ Id, Vgs: 2.24mOhm @ 60A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 65µA
Supplier Device Package: PG-TDSON-8-34
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4930 pF @ 30 V
Qualification: AEC-Q101
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| IPB024N08N5ATMA1 |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 80V 120A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 100A, 10V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 154µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 123 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8970 pF @ 40 V
Description: MOSFET N-CH 80V 120A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 100A, 10V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 154µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 123 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8970 pF @ 40 V
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| IPB024N08N5ATMA1 |
![]() |
Hersteller: Infineon Technologies
Description: MOSFET N-CH 80V 120A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 100A, 10V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 154µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 123 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8970 pF @ 40 V
Description: MOSFET N-CH 80V 120A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 100A, 10V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 154µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 123 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8970 pF @ 40 V
auf Bestellung 990 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3+ | 7.92 EUR |
| 10+ | 5.26 EUR |
| 100+ | 3.74 EUR |
| 500+ | 3.09 EUR |
| CY2304SXC-1 |
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Hersteller: Infineon Technologies
Description: IC FANOUT BUFFER 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: Clock
Frequency - Max: 133.3MHz
Type: Fanout Buffer (Distribution), Zero Delay Buffer
Input: Clock
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3V ~ 3.6V
Ratio - Input:Output: 1:4
Differential - Input:Output: No/No
Supplier Device Package: 8-SOIC
PLL: Yes
Divider/Multiplier: No/No
Part Status: Active
Number of Circuits: 1
DigiKey Programmable: Not Verified
Description: IC FANOUT BUFFER 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: Clock
Frequency - Max: 133.3MHz
Type: Fanout Buffer (Distribution), Zero Delay Buffer
Input: Clock
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3V ~ 3.6V
Ratio - Input:Output: 1:4
Differential - Input:Output: No/No
Supplier Device Package: 8-SOIC
PLL: Yes
Divider/Multiplier: No/No
Part Status: Active
Number of Circuits: 1
DigiKey Programmable: Not Verified
auf Bestellung 1638 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2+ | 12.2 EUR |
| 10+ | 9.51 EUR |
| 97+ | 8.11 EUR |
| 194+ | 7.88 EUR |
| PEB2466HV1.4GD |
auf Bestellung 2550 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 17+ | 29.66 EUR |
| PEB2466HV1.3 |
auf Bestellung 118 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 19+ | 27.58 EUR |
| PEB2466HV1.4 |
auf Bestellung 3400 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 17+ | 29.66 EUR |
| PEB2466/SICFI |
Hersteller: Infineon Technologies
Description: SICOFI CODEC FILTER
Description: SICOFI CODEC FILTER
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| IRF9392PBF |
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Hersteller: Infineon Technologies
Description: MOSFET P-CH 30V 9.8A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9.8A (Ta)
Rds On (Max) @ Id, Vgs: 12.1mOhm @ 7.8A, 20V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 25µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 10V, 20V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1270 pF @ 25 V
Description: MOSFET P-CH 30V 9.8A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9.8A (Ta)
Rds On (Max) @ Id, Vgs: 12.1mOhm @ 7.8A, 20V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 25µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 10V, 20V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1270 pF @ 25 V
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| CY62138FV30LL-45ZAXA |
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Hersteller: Infineon Technologies
Description: IC SRAM 2MBIT PARALLEL 32STSOP
Packaging: Tray
Package / Case: 32-TFSOP (0.465", 11.80mm Width)
Mounting Type: Surface Mount
Memory Size: 2Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-sTSOP
Part Status: Active
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 256K x 8
DigiKey Programmable: Not Verified
Description: IC SRAM 2MBIT PARALLEL 32STSOP
Packaging: Tray
Package / Case: 32-TFSOP (0.465", 11.80mm Width)
Mounting Type: Surface Mount
Memory Size: 2Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-sTSOP
Part Status: Active
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 256K x 8
DigiKey Programmable: Not Verified
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| IM68A130V01XTMA1 |
![]() |
Hersteller: Infineon Technologies
Description: MIC MEMS ANLG NC -38DB
Packaging: Tape & Reel (TR)
Output Type: Analog
Size / Dimension: 0.132" L x 0.098" W (3.35mm x 2.50mm)
Sensitivity: -38dB @ 130dB SPL
Shape: Rectangular
Type: MEMS (Silicon)
S/N Ratio: 68dB
Termination: Solder Pads
Direction: Noise Cancelling
Port Location: Top
Height (Max): 0.039" (0.98mm)
Part Status: Active
Current - Supply: 110 µA
Voltage Range: 2.4 V ~ 3.6 V
Description: MIC MEMS ANLG NC -38DB
Packaging: Tape & Reel (TR)
Output Type: Analog
Size / Dimension: 0.132" L x 0.098" W (3.35mm x 2.50mm)
Sensitivity: -38dB @ 130dB SPL
Shape: Rectangular
Type: MEMS (Silicon)
S/N Ratio: 68dB
Termination: Solder Pads
Direction: Noise Cancelling
Port Location: Top
Height (Max): 0.039" (0.98mm)
Part Status: Active
Current - Supply: 110 µA
Voltage Range: 2.4 V ~ 3.6 V
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| IM68A130V01XTMA1 |
![]() |
Hersteller: Infineon Technologies
Description: MIC MEMS ANLG NC -38DB
Packaging: Cut Tape (CT)
Output Type: Analog
Size / Dimension: 0.132" L x 0.098" W (3.35mm x 2.50mm)
Sensitivity: -38dB @ 130dB SPL
Shape: Rectangular
Type: MEMS (Silicon)
S/N Ratio: 68dB
Termination: Solder Pads
Direction: Noise Cancelling
Port Location: Top
Height (Max): 0.039" (0.98mm)
Part Status: Active
Current - Supply: 110 µA
Voltage Range: 2.4 V ~ 3.6 V
Description: MIC MEMS ANLG NC -38DB
Packaging: Cut Tape (CT)
Output Type: Analog
Size / Dimension: 0.132" L x 0.098" W (3.35mm x 2.50mm)
Sensitivity: -38dB @ 130dB SPL
Shape: Rectangular
Type: MEMS (Silicon)
S/N Ratio: 68dB
Termination: Solder Pads
Direction: Noise Cancelling
Port Location: Top
Height (Max): 0.039" (0.98mm)
Part Status: Active
Current - Supply: 110 µA
Voltage Range: 2.4 V ~ 3.6 V
auf Bestellung 3079 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 6+ | 3.13 EUR |
| 10+ | 2.56 EUR |
| 25+ | 2.36 EUR |
| 50+ | 2.21 EUR |
| 100+ | 2.08 EUR |
| 250+ | 1.92 EUR |
| 500+ | 1.81 EUR |
| 1000+ | 1.7 EUR |
| ISC240P06LMATMA1 |
![]() |
Hersteller: Infineon Technologies
Description: MOSFET P-CH 60V 59A TDSON-8 FL
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 59A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 40A, 10V
Power Dissipation (Max): 188W (Ta)
Vgs(th) (Max) @ Id: 2V @ 2.34A
Supplier Device Package: PG-TDSON-8 FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 136 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 30 V
Description: MOSFET P-CH 60V 59A TDSON-8 FL
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 59A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 40A, 10V
Power Dissipation (Max): 188W (Ta)
Vgs(th) (Max) @ Id: 2V @ 2.34A
Supplier Device Package: PG-TDSON-8 FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 136 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 30 V
auf Bestellung 3819 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 4+ | 4.45 EUR |
| 10+ | 2.9 EUR |
| 100+ | 2.04 EUR |
| 500+ | 1.65 EUR |




























