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IMBG65R048M1HXTMA1 IMBG65R048M1HXTMA1 Infineon Technologies Infineon-IMBG65R048M1H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7ddc01d7017e49e77323159f Description: SILICON CARBIDE MOSFET PG-TO263-
Input Capacitance (Ciss) (Max) @ Vds: 1118 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 18 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): +23V, -5V
Drive Voltage (Max Rds On, Min Rds On): 18V
Part Status: Active
Supplier Device Package: PG-TO263-7-12
Vgs(th) (Max) @ Id: 5.7V @ 6mA
Power Dissipation (Max): 183W (Tc)
Rds On (Max) @ Id, Vgs: 64mOhm @ 20.1A, 18V
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1000 Stücke
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IMBG65R048M1HXTMA1 IMBG65R048M1HXTMA1 Infineon Technologies Infineon-IMBG65R048M1H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7ddc01d7017e49e77323159f Description: SILICON CARBIDE MOSFET PG-TO263-
Input Capacitance (Ciss) (Max) @ Vds: 1118 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 18 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): +23V, -5V
Drive Voltage (Max Rds On, Min Rds On): 18V
Part Status: Active
Supplier Device Package: PG-TO263-7-12
Vgs(th) (Max) @ Id: 5.7V @ 6mA
Power Dissipation (Max): 183W (Tc)
Rds On (Max) @ Id, Vgs: 64mOhm @ 20.1A, 18V
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Cut Tape (CT)
auf Bestellung 15 Stücke:
Lieferzeit 10-14 Tag (e)
2+15.14 EUR
10+10.37 EUR
Mindestbestellmenge: 2 Stücke
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IMBG65R057M1HXTMA1 IMBG65R057M1HXTMA1 Infineon Technologies Infineon-IMBG65R057M1H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7ddc01d7017e49e7874715a2 Description: SILICON CARBIDE MOSFET PG-TO263-
Input Capacitance (Ciss) (Max) @ Vds: 930 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 18 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): +23V, -5V
Drive Voltage (Max Rds On, Min Rds On): 18V
Part Status: Active
Supplier Device Package: PG-TO263-7-12
Vgs(th) (Max) @ Id: 5.7V @ 5mA
Power Dissipation (Max): 161W (Tc)
Rds On (Max) @ Id, Vgs: 74mOhm @ 16.7A, 18V
Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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IMBG65R057M1HXTMA1 IMBG65R057M1HXTMA1 Infineon Technologies Infineon-IMBG65R057M1H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7ddc01d7017e49e7874715a2 Description: SILICON CARBIDE MOSFET PG-TO263-
Input Capacitance (Ciss) (Max) @ Vds: 930 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 18 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): +23V, -5V
Drive Voltage (Max Rds On, Min Rds On): 18V
Part Status: Active
Supplier Device Package: PG-TO263-7-12
Vgs(th) (Max) @ Id: 5.7V @ 5mA
Power Dissipation (Max): 161W (Tc)
Rds On (Max) @ Id, Vgs: 74mOhm @ 16.7A, 18V
Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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IMBG65R083M1HXTMA1 IMBG65R083M1HXTMA1 Infineon Technologies Infineon-IMBG65R083M1H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7ddc01d7017e49f0a426164d Description: SILICON CARBIDE MOSFET PG-TO263-
Input Capacitance (Ciss) (Max) @ Vds: 624 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 18 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): +23V, -5V
Drive Voltage (Max Rds On, Min Rds On): 18V
Supplier Device Package: PG-TO263-7-12
Vgs(th) (Max) @ Id: 5.7V @ 3.3mA
Power Dissipation (Max): 126W (Tc)
Rds On (Max) @ Id, Vgs: 111mOhm @ 11.2A, 18V
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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IMBG65R083M1HXTMA1 IMBG65R083M1HXTMA1 Infineon Technologies Infineon-IMBG65R083M1H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7ddc01d7017e49f0a426164d Description: SILICON CARBIDE MOSFET PG-TO263-
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 624 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 18 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): +23V, -5V
Drive Voltage (Max Rds On, Min Rds On): 18V
Supplier Device Package: PG-TO263-7-12
Vgs(th) (Max) @ Id: 5.7V @ 3.3mA
Power Dissipation (Max): 126W (Tc)
Rds On (Max) @ Id, Vgs: 111mOhm @ 11.2A, 18V
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Produkt ist nicht verfügbar
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IMBG65R107M1HXTMA1 IMBG65R107M1HXTMA1 Infineon Technologies Infineon-IMBG65R107M1H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7ddc01d7017e49f0b8bd1650 Description: SILICON CARBIDE MOSFET PG-TO263-
Input Capacitance (Ciss) (Max) @ Vds: 496 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 18 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): +23V, -5V
Drive Voltage (Max Rds On, Min Rds On): 18V
Part Status: Active
Supplier Device Package: PG-TO263-7-12
Vgs(th) (Max) @ Id: 5.7V @ 2.6mA
Power Dissipation (Max): 110W (Tc)
Rds On (Max) @ Id, Vgs: 141mOhm @ 8.9A, 18V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1000 Stücke
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IMBG65R107M1HXTMA1 IMBG65R107M1HXTMA1 Infineon Technologies Infineon-IMBG65R107M1H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7ddc01d7017e49f0b8bd1650 Description: SILICON CARBIDE MOSFET PG-TO263-
Input Capacitance (Ciss) (Max) @ Vds: 496 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 18 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): +23V, -5V
Drive Voltage (Max Rds On, Min Rds On): 18V
Part Status: Active
Supplier Device Package: PG-TO263-7-12
Vgs(th) (Max) @ Id: 5.7V @ 2.6mA
Power Dissipation (Max): 110W (Tc)
Rds On (Max) @ Id, Vgs: 141mOhm @ 8.9A, 18V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Cut Tape (CT)
auf Bestellung 810 Stücke:
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2+10.6 EUR
10+7.13 EUR
100+5.2 EUR
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TZ740N22KS01HPSA3 Infineon Technologies Infineon-TZ740N-DS-v03_05-EN.pdf?fileId=db3a304412b407950112b42f88224c15 Description: MOODULE
Current - On State (It (RMS)) (Max): 1500 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (AV)) (Max): 819 A
Number of SCRs, Diodes: 1 SCR
Current - Non Rep. Surge 50, 60Hz (Itsm): 30000A @ 50Hz
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Hold (Ih) (Max): 500 mA
Structure: Single
Operating Temperature: 125°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
Voltage - Off State: 2.2 kV
Produkt ist nicht verfügbar
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TLE9261BQXXUMA2 TLE9261BQXXUMA2 Infineon Technologies Infineon-TLE9261BQX-DataSheet-v01_20-EN.pdf?fileId=5546d462602a9dc8016073c1554f5b04 Description: OPTIREG SYST BASIS CHIPS
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 3V ~ 28V
Applications: System Basis Chip
Current - Supply: 3.5mA
Supplier Device Package: PG-VQFN-48-79
Produkt ist nicht verfügbar
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CY8C4013LQI-411T CY8C4013LQI-411T Infineon Technologies Infineon-PSoC_4_PSoC_4000_Family_Programmable_System-on-Chip_(PSoC)-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecc2b7d45ee&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC MCU 32BIT 8KB FLASH 16QFN
DigiKey Programmable: Not Verified
Number of I/O: 12
Part Status: Active
Supplier Device Package: 16-QFN (3x3)
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Connectivity: I2C
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Core Size: 32-Bit
Data Converters: D/A 1x7b, 1x8b
Core Processor: ARM® Cortex®-M0
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 2K x 8
Program Memory Size: 8KB (8K x 8)
Speed: 16MHz
Mounting Type: Surface Mount
Package / Case: 16-UFQFN Exposed Pad
Packaging: Tape & Reel (TR)
auf Bestellung 5000 Stücke:
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2500+1.05 EUR
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CY8C4013LQI-411T CY8C4013LQI-411T Infineon Technologies Infineon-PSoC_4_PSoC_4000_Family_Programmable_System-on-Chip_(PSoC)-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecc2b7d45ee&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC MCU 32BIT 8KB FLASH 16QFN
DigiKey Programmable: Not Verified
Number of I/O: 12
Part Status: Active
Supplier Device Package: 16-QFN (3x3)
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Connectivity: I2C
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Core Size: 32-Bit
Data Converters: D/A 1x7b, 1x8b
Core Processor: ARM® Cortex®-M0
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 2K x 8
Program Memory Size: 8KB (8K x 8)
Speed: 16MHz
Mounting Type: Surface Mount
Package / Case: 16-UFQFN Exposed Pad
Packaging: Cut Tape (CT)
auf Bestellung 7158 Stücke:
Lieferzeit 10-14 Tag (e)
8+2.36 EUR
11+1.72 EUR
25+1.56 EUR
100+1.39 EUR
250+1.3 EUR
500+1.25 EUR
1000+1.21 EUR
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CY8C3244LTI-130 CY8C3244LTI-130 Infineon Technologies Infineon-PSoC_3_CY8C32_Programmable_System-on-Chip-DataSheet-v28_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec7aa5b3f68&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files&redirId=File_1_2_960 Description: IC MCU 8BIT 16KB FLASH 68QFN
Number of I/O: 38
Part Status: Active
Supplier Device Package: 68-QFN (8x8)
Peripherals: CapSense, DMA, POR, PWM, WDT
Connectivity: EBI/EMI, I2C, LINbus, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Core Size: 8-Bit
Data Converters: A/D 16x12b; D/A 1x8b
Core Processor: 8051
EEPROM Size: 512 x 8
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 2K x 8
Program Memory Size: 16KB (16K x 8)
Speed: 50MHz
Mounting Type: Surface Mount
Package / Case: 68-VFQFN Exposed Pad
Packaging: Tray
DigiKey Programmable: Not Verified
auf Bestellung 2519 Stücke:
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2+10.23 EUR
10+9.24 EUR
25+8.81 EUR
80+7.65 EUR
260+7.57 EUR
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CY8C3245AXI-158 CY8C3245AXI-158 Infineon Technologies Infineon-PSoC_3_CY8C32_Programmable_System-on-Chip-DataSheet-v28_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec7aa5b3f68&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files&redirId=File_1_2_960 Description: IC MCU 8BIT 32KB FLASH 100TQFP
RAM Size: 4K x 8
Program Memory Size: 32KB (32K x 8)
Speed: 50MHz
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Packaging: Tray
Number of I/O: 62
Supplier Device Package: 100-TQFP (14x14)
Peripherals: CapSense, DMA, POR, PWM, WDT
Connectivity: EBI/EMI, I2C, LINbus, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Core Size: 8-Bit
Data Converters: A/D 16x12b; D/A 1x8b
Core Processor: 8051
EEPROM Size: 1K x 8
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
DigiKey Programmable: Not Verified
auf Bestellung 450 Stücke:
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2+15.77 EUR
10+14.25 EUR
25+13.58 EUR
90+11.79 EUR
270+11.26 EUR
450+10.27 EUR
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CY8C3445LTI-078 CY8C3445LTI-078 Infineon Technologies download Description: IC MCU 8BIT 32KB FLASH 48QFN
Number of I/O: 25
Part Status: Active
Supplier Device Package: 48-QFN (7x7)
DigiKey Programmable: Not Verified
Peripherals: CapSense, DMA, LCD, POR, PWM, WDT
Connectivity: EBI/EMI, I2C, LINbus, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Core Size: 8-Bit
Data Converters: A/D 16x12b; D/A 2x8b
Core Processor: 8051
EEPROM Size: 1K x 8
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 4K x 8
Program Memory Size: 32KB (32K x 8)
Speed: 50MHz
Mounting Type: Surface Mount
Package / Case: 48-VFQFN Exposed Pad
Packaging: Tray
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IPD079N06L3GATMA1 IPD079N06L3GATMA1 Infineon Technologies Infineon-IPD079N06L3-DS-v02_00-en.pdf?fileId=db3a30431ddc9372011e2b5528634dc0 Description: MOSFET N-CH 60V 50A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 7.9mOhm @ 50A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 34µA
Supplier Device Package: PG-TO252-3-311
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4900 pF @ 30 V
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10+1.92 EUR
100+1.28 EUR
500+1.01 EUR
1000+0.92 EUR
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IDW30E60AFKSA1 IDW30E60AFKSA1 Infineon Technologies Part_Number_Guide_Web.pdf Description: DIODE GEN PURP 600V 60A TO247-3
Packaging: Bulk
Current - Reverse Leakage @ Vr: 40 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: PG-TO247-3
Current - Average Rectified (Io): 60A
Technology: Standard
Reverse Recovery Time (trr): 143 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-3
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IDW30E65D1 IDW30E65D1 Infineon Technologies INFNS30296-1.pdf?t.download=true&u=5oefqw Description: DIODE GP 650V 60A TO247-3-1
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S6J336CHSBSV20000 S6J336CHSBSV20000 Infineon Technologies Infineon-S6J3360_Series_S6J3370_Series_32-bit_Arm_Cortex-R5F_TRAVEO_T1G_Microcontroller-AdditionalTechnicalInformation-v12_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee4479d6ae2 Description: IC MCU 32BIT 112KB FLASH 144LQFP
Packaging: Tray
Package / Case: 144-LQFP
Mounting Type: Surface Mount
Speed: 132MHz
Program Memory Size: 112KB (112K x 8)
RAM Size: 128K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: Arm® Cortex®-R5F
Data Converters: A/D 40x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, I2C, LINbus, UART/USART
Peripherals: DMA, I2S, LVD, POR, PWM, WDT
Supplier Device Package: 144-LQFP (20x20)
Part Status: Active
Number of I/O: 94
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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SAF-XE160FU-8F66RAAFXUMA1 SAF-XE160FU-8F66RAAFXUMA1 Infineon Technologies Product_Catalog_2012.pdf?t.download=true&u=5oefqw Description: 16-BIT FLASH RISC MCU
auf Bestellung 4797 Stücke:
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130+3.83 EUR
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IPF042N10NF2SATMA1 IPF042N10NF2SATMA1 Infineon Technologies Infineon-IPF042N10NF2S-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c83cd30810183f49616ca62b7 Description: MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 139A (Tc)
Rds On (Max) @ Id, Vgs: 4.25mOhm @ 80A, 10V
Power Dissipation (Max): 3.8W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 93µA
Supplier Device Package: PG-TO263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 50 V
Produkt ist nicht verfügbar
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IPF042N10NF2SATMA1 IPF042N10NF2SATMA1 Infineon Technologies Infineon-IPF042N10NF2S-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c83cd30810183f49616ca62b7 Description: MOSFET
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 139A (Tc)
Rds On (Max) @ Id, Vgs: 4.25mOhm @ 80A, 10V
Power Dissipation (Max): 3.8W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 93µA
Supplier Device Package: PG-TO263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 50 V
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CYW20820A1KFBG CYW20820A1KFBG Infineon Technologies Infineon-CYW20820_AIROC_Bluetooth_Bluetooth_LE_system_on_chip-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c8929aa4d0189bd07ff731403 Description: IC RF TXRX+MCU BLE 62FBGA
DigiKey Programmable: Not Verified
Part Status: Active
Serial Interfaces: ADC, GPIO, I2C, I2S, PCM, SPI, UART
RF Family/Standard: Bluetooth
GPIO: 22
Supplier Device Package: 62-FBGA (4.5x4.5)
Current - Transmitting: 18.58mA ~ 22.48mA
Data Rate (Max): 3Mbps
Current - Receiving: 6.28mA ~ 6.87mA
Protocol: Bluetooth v5.2 + EDR
Power - Output: 11.5dBm
Voltage - Supply: 1.71V ~ 3.3V
Operating Temperature: -30°C ~ 85°C
Type: TxRx + MCU
Memory Size: 256kB Flash, 176kB RAM, 1MB ROM
Sensitivity: -94.5dBm
Package / Case: 62-WFBGA
Packaging: Tray
Frequency: 2.4GHz
Mounting Type: Surface Mount
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D4810N24TVFXPSA1 D4810N24TVFXPSA1 Infineon Technologies D4810N.pdf Description: DIODE GEN PURP 2.4KV 4810A
Current - Average Rectified (Io): 4810A
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: DO-200AE
Packaging: Bulk
Current - Reverse Leakage @ Vr: 200 mA @ 2400 V
Voltage - Forward (Vf) (Max) @ If: 1.078 V @ 4000 A
Voltage - DC Reverse (Vr) (Max): 2400 V
Part Status: Obsolete
Operating Temperature - Junction: -40°C ~ 150°C
Produkt ist nicht verfügbar
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IRFU3607TRL701P IRFU3607TRL701P Infineon Technologies irfr3607pbf.pdf?fileId=5546d462533600a401535631463620a7 Description: MOSFET N CH 75V 56A IPAK
Input Capacitance (Ciss) (Max) @ Vds: 3070 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V
Drain to Source Voltage (Vdss): 75 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: IPAK (TO-251AA)
Vgs(th) (Max) @ Id: 4V @ 100µA
Power Dissipation (Max): 140W (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 46A, 10V
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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S6E2H14G0AGB30000 S6E2H14G0AGB30000 Infineon Technologies ?utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC MCU 32BIT 288KB FLASH 121FBGA
Data Converters: A/D 24x12b; D/A 2x12b
Core Processor: ARM® Cortex®-M4F
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 32K x 8
Program Memory Size: 288KB (288K x 8)
Speed: 160MHz
Mounting Type: Surface Mount
Package / Case: 121-TFBGA
Packaging: Tray
Number of I/O: 100
Part Status: Active
Supplier Device Package: 121-FBGA (6x6)
Peripherals: DMA, LVD, POR, PWM, WDT
Connectivity: CSIO, EBI/EMI, I2C, LINbus, UART/USART
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit
DigiKey Programmable: Not Verified
auf Bestellung 488 Stücke:
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S6E2H14G0AGB3000A S6E2H14G0AGB3000A Infineon Technologies Infineon-S6E2H_Series_32-bit_Arm_Cortex-M4F_FM4_Microcontroller-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed234f14ede Description: IC MCU 32BIT 288KB FLASH 121FBGA
Number of I/O: 100
Part Status: Active
Supplier Device Package: 121-FBGA (6x6)
Peripherals: DMA, LVD, POR, PWM, WDT
Connectivity: CSIO, EBI/EMI, I2C, LINbus, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit
Data Converters: A/D 24x12b SAR; D/A 2x12b
Core Processor: ARM® Cortex®-M4F
Program Memory Type: FLASH
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 125°C (TJ)
RAM Size: 32K x 8
Program Memory Size: 288KB (288K x 8)
Speed: 160MHz
Mounting Type: Surface Mount
Package / Case: 121-TFBGA
Packaging: Tray
DigiKey Programmable: Not Verified
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S6E2H14E0AGV2000M S6E2H14E0AGV2000M Infineon Technologies Infineon-S6E2H_Series_32-bit_Arm_Cortex-M4F_FM4_Microcontroller-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed234f14ede Description: IC MCU 32BIT 288KB FLASH 80LQFP
Number of I/O: 63
Part Status: Active
Supplier Device Package: 80-LQFP (12x12)
Peripherals: DMA, LVD, POR, PWM, WDT
Connectivity: CSIO, EBI/EMI, I2C, LINbus, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit
Data Converters: A/D 16x12b SAR; D/A 2x12b
Core Processor: ARM® Cortex®-M4F
Program Memory Type: FLASH
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 125°C (TJ)
DigiKey Programmable: Not Verified
RAM Size: 32K x 8
Program Memory Size: 288KB (288K x 8)
Speed: 160MHz
Mounting Type: Surface Mount
Package / Case: 80-LQFP
Packaging: Tray
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S6E2GK6JHAGV2000A S6E2GK6JHAGV2000A Infineon Technologies download Description: IC MCU 32BIT 512KB FLASH 176LQFP
DigiKey Programmable: Not Verified
Number of I/O: 153
Supplier Device Package: 176-LQFP (24x24)
Peripherals: DMA, I2S, LVD, POR, PWM, WDT
Connectivity: CSIO, EBI/EMI, I2C, LINbus, SD, SmartCard, SPI, UART/USART, USB
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit Single-Core
Data Converters: A/D 32x12b
Core Processor: ARM® Cortex®-M4F
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 128K x 8
Program Memory Size: 512KB (512K x 8)
Speed: 180MHz
Mounting Type: Surface Mount
Package / Case: 176-LQFP
Packaging: Tray
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S6E2H46E0AGV20000 S6E2H46E0AGV20000 Infineon Technologies ?utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC MCU 32BIT 544KB FLASH 80LQFP
Speed: 160MHz
Mounting Type: Surface Mount
Package / Case: 80-LQFP
Packaging: Tray
Number of I/O: 63
Part Status: Active
Supplier Device Package: 80-LQFP (12x12)
Peripherals: DMA, LVD, POR, PWM, WDT
Connectivity: CANbus, CSIO, EBI/EMI, I²C, LINbus, UART/USART
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit Single-Core
Data Converters: A/D 16x12b; D/A 2x12b
Core Processor: ARM® Cortex®-M4F
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 64K x 8
Program Memory Size: 544KB (544K x 8)
DigiKey Programmable: Not Verified
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S6E2H44E0AGV20000 S6E2H44E0AGV20000 Infineon Technologies ?utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC MCU 32BIT 288KB FLASH 80LQFP
DigiKey Programmable: Not Verified
Number of I/O: 63
Part Status: Active
Supplier Device Package: 80-LQFP (12x12)
Peripherals: DMA, LVD, POR, PWM, WDT
Connectivity: CANbus, CSIO, EBI/EMI, I2C, LINbus, UART/USART
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit Single-Core
Data Converters: A/D 16x12b; D/A 2x12b
Core Processor: ARM® Cortex®-M4F
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 32K x 8
Program Memory Size: 288KB (288K x 8)
Speed: 160MHz
Mounting Type: Surface Mount
Package / Case: 80-LQFP
Packaging: Tray
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S6E2GK8H0AGV2000A S6E2GK8H0AGV2000A Infineon Technologies download Description: IC MCU 32BIT 1MB FLASH 144LQFP
Number of I/O: 121
Part Status: Active
Supplier Device Package: 144-LQFP (20x20)
Peripherals: DMA, I2S, LVD, POR, PWM, WDT
Connectivity: CSIO, EBI/EMI, I2C, LINbus, SD, SmartCard, SPI, UART/USART, USB
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit Single-Core
Data Converters: A/D 24x12b
Core Processor: ARM® Cortex®-M4F
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 192K x 8
Program Memory Size: 1MB (1M x 8)
Speed: 180MHz
Mounting Type: Surface Mount
Package / Case: 144-LQFP
Packaging: Tray
DigiKey Programmable: Not Verified
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S6E2GM8J0AGV2000A S6E2GM8J0AGV2000A Infineon Technologies download Description: IC MCU 32BIT 1MB FLASH 176LQFP
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit Single-Core
Data Converters: A/D 32x12b
Core Processor: ARM® Cortex®-M4F
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 192K x 8
Program Memory Size: 1MB (1M x 8)
Speed: 180MHz
Mounting Type: Surface Mount
Package / Case: 176-LQFP
Packaging: Tray
Number of I/O: 153
Part Status: Active
Supplier Device Package: 176-LQFP (24x24)
Peripherals: DMA, I2S, LVD, POR, PWM, WDT
Connectivity: CANbus, CSIO, EBI/EMI, Ethernet, I2C, LINbus, SD, SmartCard, SPI, UART/USART, USB
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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S6E2H44E0AGV2000M S6E2H44E0AGV2000M Infineon Technologies Infineon-S6E2H_Series_32-bit_Arm_Cortex-M4F_FM4_Microcontroller-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed234f14ede Description: IC MCU 32BIT 288KB FLASH 80LQFP
DigiKey Programmable: Not Verified
Number of I/O: 63
Part Status: Active
Supplier Device Package: 80-LQFP (12x12)
Peripherals: DMA, LVD, POR, PWM, WDT
Connectivity: CANbus, CSIO, EBI/EMI, I2C, LINbus, UART/USART
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit Single-Core
Data Converters: A/D 16x12b; D/A 2x12b
Core Processor: ARM® Cortex®-M4F
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 32K x 8
Program Memory Size: 288KB (288K x 8)
Speed: 160MHz
Mounting Type: Surface Mount
Package / Case: 80-LQFP
Packaging: Tray
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S6E2H16G0AGV20000 S6E2H16G0AGV20000 Infineon Technologies ?utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC MCU 32BIT 544KB FLASH 120LQFP
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S6E2H44G0AGB3000A S6E2H44G0AGB3000A Infineon Technologies ?utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC MCU 32BIT 288KB FLASH 121FBGA
Core Size: 32-Bit Single-Core
Data Converters: A/D 24x12b; D/A 2x12b
Core Processor: ARM® Cortex®-M4F
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 32K x 8
Program Memory Size: 288KB (288K x 8)
Speed: 160MHz
Mounting Type: Surface Mount
Package / Case: 121-TFBGA
Packaging: Tray
DigiKey Programmable: Not Verified
Number of I/O: 100
Supplier Device Package: 121-FBGA (6x6)
Peripherals: DMA, LVD, POR, PWM, WDT
Connectivity: CANbus, CSIO, EBI/EMI, I2C, LINbus, UART/USART
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
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S6E2H16G0AGB3000A S6E2H16G0AGB3000A Infineon Technologies ?utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC MCU 32BIT 544KB FLASH 121FBGA
DigiKey Programmable: Not Verified
Number of I/O: 100
Part Status: Active
Supplier Device Package: 121-FBGA (6x6)
Peripherals: DMA, LVD, POR, PWM, WDT
Connectivity: CSIO, EBI/EMI, I2C, LINbus, UART/USART
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit
Data Converters: A/D 24x12b; D/A 2x12b
Core Processor: ARM® Cortex®-M4F
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 64K x 8
Program Memory Size: 544KB (544K x 8)
Speed: 160MHz
Mounting Type: Surface Mount
Package / Case: 121-TFBGA
Packaging: Tray
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S6E2H44F0AGV20000 S6E2H44F0AGV20000 Infineon Technologies ?utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC MCU 32BIT 288KB FLASH 100LQFP
DigiKey Programmable: Not Verified
Number of I/O: 80
Supplier Device Package: 100-LQFP (14x14)
Peripherals: DMA, LVD, POR, PWM, WDT
Connectivity: CANbus, CSIO, EBI/EMI, I2C, LINbus, UART/USART
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit Single-Core
Data Converters: A/D 24x12b; D/A 2x12b
Core Processor: ARM® Cortex®-M4F
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 32K x 8
Program Memory Size: 288KB (288K x 8)
Speed: 160MHz
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Packaging: Tray
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S6E2H14F0AGV20000 S6E2H14F0AGV20000 Infineon Technologies infineon-psoc-4-4200-ble-family-datasheet-programmable-system-on-chip-datasheet-en.pdf Description: IC MCU 32BIT 288KB FLASH 100LQFP
Number of I/O: 80
Part Status: Active
Supplier Device Package: 100-LQFP (14x14)
Peripherals: DMA, LVD, POR, PWM, WDT
Connectivity: CSIO, EBI/EMI, I2C, LINbus, UART/USART
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit
Data Converters: A/D 24x12b; D/A 2x12b
Core Processor: ARM® Cortex®-M4F
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 32K x 8
Program Memory Size: 288KB (288K x 8)
Speed: 160MHz
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Packaging: Tray
DigiKey Programmable: Not Verified
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10+9.09 EUR
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S6E2GM8H0AGV2000A S6E2GM8H0AGV2000A Infineon Technologies download Description: IC MCU 32BIT 1MB FLASH 144LQFP
DigiKey Programmable: Not Verified
Number of I/O: 121
Supplier Device Package: 144-LQFP (20x20)
Peripherals: DMA, I2S, LVD, POR, PWM, WDT
Connectivity: CANbus, CSIO, EBI/EMI, Ethernet, I2C, LINbus, SD, SmartCard, SPI, UART/USART, USB
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit Single-Core
Data Converters: A/D 24x12b
Core Processor: ARM® Cortex®-M4F
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 192K x 8
Program Memory Size: 1MB (1M x 8)
Speed: 180MHz
Mounting Type: Surface Mount
Package / Case: 144-LQFP
Packaging: Tray
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S6E2H16F0AGV20000 S6E2H16F0AGV20000 Infineon Technologies ?utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC MCU 32BIT 544KB FLASH 100LQFP
Number of I/O: 80
Part Status: Active
Supplier Device Package: 100-LQFP (14x14)
Peripherals: DMA, LVD, POR, PWM, WDT
Connectivity: CSIO, EBI/EMI, I2C, LINbus, UART/USART
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit Single-Core
Data Converters: A/D 24x12b; D/A 2x12b
Core Processor: ARM® Cortex®-M4F
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 64K x 8
Program Memory Size: 544KB (544K x 8)
Speed: 160MHz
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Packaging: Tray
DigiKey Programmable: Not Verified
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2+16.7 EUR
10+13.04 EUR
90+11.18 EUR
180+10.8 EUR
270+10.61 EUR
540+10.32 EUR
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S6E2H14G0AGV20000 S6E2H14G0AGV20000 Infineon Technologies ?utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC MCU 32BIT 288KB FLASH 120LQFP
Oscillator Type: Internal
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 32K x 8
Program Memory Size: 288KB (288K x 8)
Speed: 160MHz
Mounting Type: Surface Mount
Package / Case: 120-LQFP
Packaging: Tray
DigiKey Programmable: Not Verified
Number of I/O: 100
Supplier Device Package: 120-LQFP (16x16)
Peripherals: DMA, LVD, POR, PWM, WDT
Connectivity: CSIO, EBI/EMI, I2C, LINbus, UART/USART
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit Single-Core
Data Converters: A/D 24x12b; D/A 2x12b
Core Processor: ARM® Cortex®-M4F
Program Memory Type: FLASH
Produkt ist nicht verfügbar
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S6E2GK6J0AGV2000A S6E2GK6J0AGV2000A Infineon Technologies Infineon-S6E2G_Series_32_bit_ARM(R)_Cortex(R)_M4F_FM4_Microcontroller-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed1e6ff4e32&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files&r Description: IC MCU 32BIT 512KB FLASH 176LQFP
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 128K x 8
Program Memory Size: 512KB (512K x 8)
Speed: 180MHz
Mounting Type: Surface Mount
Package / Case: 176-LQFP
Packaging: Tray
DigiKey Programmable: Not Verified
Number of I/O: 153
Supplier Device Package: 176-LQFP (24x24)
Peripherals: DMA, I2S, LVD, POR, PWM, WDT
Connectivity: CSIO, EBI/EMI, I2C, LINbus, SD, SmartCard, SPI, UART/USART, USB
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit Single-Core
Data Converters: A/D 32x12b
Core Processor: ARM® Cortex®-M4F
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S6E2H44G0AGV20000 S6E2H44G0AGV20000 Infineon Technologies ?utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC MCU 32BIT 288KB FLASH 120LQFP
Number of I/O: 100
Supplier Device Package: 120-LQFP (16x16)
Peripherals: DMA, LVD, POR, PWM, WDT
Connectivity: CANbus, CSIO, EBI/EMI, I2C, LINbus, UART/USART
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit Single-Core
Data Converters: A/D 24x12b; D/A 2x12b
Core Processor: ARM® Cortex®-M4F
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 32K x 8
Program Memory Size: 288KB (288K x 8)
Speed: 160MHz
Mounting Type: Surface Mount
Package / Case: 120-LQFP
Packaging: Tray
DigiKey Programmable: Not Verified
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S6E2H16E0AGV20000 S6E2H16E0AGV20000 Infineon Technologies ?utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC MCU 32BIT 544KB FLASH 80LQFP
DigiKey Programmable: Not Verified
Number of I/O: 63
Supplier Device Package: 80-LQFP (12x12)
Peripherals: DMA, LVD, POR, PWM, WDT
Connectivity: CSIO, EBI/EMI, I²C, LINbus, UART/USART
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit Single-Core
Data Converters: A/D 16x12b; D/A 2x12b
Core Processor: ARM® Cortex®-M4F
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 64K x 8
Program Memory Size: 544KB (544K x 8)
Speed: 160MHz
Mounting Type: Surface Mount
Package / Case: 80-LQFP
Packaging: Tray
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IKW75N120CH7XKSA1 IKW75N120CH7XKSA1 Infineon Technologies Infineon-IKW75N120CH7-DataSheet-v01_10-EN.pdf?fileId=8ac78c8c84a33f400184e1ecb5240a3a Description: IGBT TRENCH FS 1200V 92A TO247-3
Power - Max: 549 W
Current - Collector Pulsed (Icm): 300 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 92 A
Part Status: Active
Gate Charge: 535 nC
Switching Energy: 4.22mJ (on), 1.66mJ (off)
Td (on/off) @ 25°C: 55ns/461ns
IGBT Type: Trench Field Stop
Supplier Device Package: PG-TO247-3-U06
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 75A
Reverse Recovery Time (trr): 145 ns
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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IKQ75N120CH7XKSA1 IKQ75N120CH7XKSA1 Infineon Technologies Infineon-IKQ75N120CH7-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c84a33f400184e2a14ad72d65 Description: IGBT TRENCH FS 1200V 82A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 149 ns
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 75A
Supplier Device Package: PG-TO247-3-U01
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 56ns/470ns
Switching Energy: 5.28mJ (on), 1.76mJ (off)
Gate Charge: 518 nC
Part Status: Active
Current - Collector (Ic) (Max): 82 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 549 W
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CY15B204QI-20LPXI CY15B204QI-20LPXI Infineon Technologies Infineon-CY15B204QI-Excelon-LP-4-Mbit-(512x8)-Serial-(SPI)-F-RAM-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7e7124d1017f2089a6d33dd5 Description: IC FRAM 4MBIT SPI 20MHZ 8GQFN
Technology: FRAM (Ferroelectric RAM)
Voltage - Supply: 1.8V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 4Mbit
Mounting Type: Surface Mount
Package / Case: 8-UQFN
Packaging: Tray
DigiKey Programmable: Not Verified
Memory Organization: 512K x 8
Access Time: 20 ns
Memory Interface: SPI
Supplier Device Package: 8-GQFN (3.23x3.28)
Memory Format: FRAM
Clock Frequency: 20 MHz
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A2C04189800 Infineon Technologies Description: IC MCU 32BIT 176LQFP
DigiKey Programmable: Not Verified
Part Status: Active
Packaging: Tray
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CY9AF312KPMC-G-JNCGE2 CY9AF312KPMC-G-JNCGE2 Infineon Technologies Infineon-CY9A310K_Series_32_bit_Arm_Cortex_M3_FM3_Microcontroller-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0edef47d63e4 Description: IC MCU 32BIT 160KB FLASH 48LQFP
DigiKey Programmable: Not Verified
Number of I/O: 36
Part Status: Active
Supplier Device Package: 48-LQFP (7x7)
Peripherals: DMA, LVD, POR, PWM, WDT
Connectivity: CSIO, I2C, LINbus, UART/USART, USB
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit
Data Converters: A/D 8x12b
Core Processor: ARM® Cortex®-M3
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 16K x 8
Program Memory Size: 160KB (160K x 8)
Speed: 40MHz
Mounting Type: Surface Mount
Package / Case: 48-LQFP
Packaging: Tray
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S27KL0642GABHI023 S27KL0642GABHI023 Infineon Technologies Infineon-S27KL0642_S27KS0642_3.0_V_1.8_V_64_Mb_(8_MB)_HyperRAM_Self-Refresh_DRAM-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee8a1c47164 Description: IC PSRAM 64MBIT HYPERBUS 24FBGA
Memory Organization: 8M x 8
Access Time: 35 ns
Memory Interface: HyperBus
Write Cycle Time - Word, Page: 35ns
Part Status: Active
Supplier Device Package: 24-FBGA (6x8)
Memory Format: PSRAM
Clock Frequency: 200 MHz
Technology: PSRAM (Pseudo SRAM)
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Volatile
Memory Size: 64Mbit
Mounting Type: Surface Mount
Package / Case: 24-VBGA
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
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IPB100N04S303ATMA1 IPB100N04S303ATMA1 Infineon Technologies IPx100N04S3-03.pdf Description: MOSFET N-CH 40V 100A TO263-3
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 80A, 10V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 4V @ 150µA
Supplier Device Package: PG-TO263-3-2
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9600 pF @ 25 V
Qualification: AEC-Q101
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BF5030RE6327 BF5030RE6327 Infineon Technologies INFNS13146-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Current - Test: 10 mA
Voltage - Test: 3 V
Voltage - Rated: 8 V
Supplier Device Package: PG-SOT-143R-3D
Noise Figure: 1.3dB
Technology: MOSFET
Gain: 24dB
Configuration: N-Channel
Frequency: 800MHz
Mounting Type: Surface Mount
Current Rating (Amps): 25mA
Package / Case: SOT-143R
Packaging: Bulk
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BF 5030 E6327 BF 5030 E6327 Infineon Technologies BF5030_Series.pdf Description: RF MOSFET 3V SOT143
Current - Test: 10 mA
Voltage - Test: 3 V
Voltage - Rated: 8 V
Supplier Device Package: PG-SOT-143-3D
Noise Figure: 1.3dB
Technology: MOSFET (Metal Oxide)
Gain: 24dB
Configuration: N-Channel
Frequency: 800MHz
Mounting Type: Surface Mount
Current Rating (Amps): 25mA
Package / Case: TO-253-4, TO-253AA
Packaging: Tape & Reel (TR)
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BF 5030R E6327 BF 5030R E6327 Infineon Technologies BF5030_Series.pdf Description: RF MOSFET 3V SOT143R
Current - Test: 10 mA
Voltage - Test: 3 V
Voltage - Rated: 8 V
Supplier Device Package: PG-SOT-143R-3D
Noise Figure: 1.3dB
Technology: MOSFET (Metal Oxide)
Gain: 24dB
Configuration: N-Channel
Frequency: 800MHz
Mounting Type: Surface Mount
Current Rating (Amps): 25mA
Package / Case: SOT-143R
Packaging: Tape & Reel (TR)
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CY3676 CY3676 Infineon Technologies Infineon-CY2941X_CY2942X_HIGH_PERFORMANCE_PROGRAMMABLE_OSCILLATORS-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee1b4bc67bc Description: EVAL FOR CY29412
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IAUA220N08S5N021AUMA1 IAUA220N08S5N021AUMA1 Infineon Technologies Infineon-IAUA220N08S5N021-DataSheet-v01_00-EN.pdf?fileId=5546d4627956d53f01798e39cb690b3e Description: MOSFET_(75V 120V( PG-HSOF-5
Packaging: Cut Tape (CT)
Package / Case: 5-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 220A (Tj)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 100A, 10V
Power Dissipation (Max): 211W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 120µA
Supplier Device Package: PG-HSOF-5-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7219 pF @ 40 V
Grade: Automotive
Qualification: AEC-Q101
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S29GL256P90FFIR10 S29GL256P90FFIR10 Infineon Technologies 128_Mbit_3_V_Page_Flash_with_90_nm_MirrorBit_Process_Technology-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed7850458a5&utm_source=cypress&utm_medium=ref Description: IC FLASH 256MBIT PARALLEL 64FBGA
Memory Organization: 32M x 8
Access Time: 90 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 90ns
Part Status: Active
Supplier Device Package: 64-FBGA (13x11)
Memory Format: FLASH
Technology: FLASH - NOR
Voltage - Supply: 3V ~ 3.6V
DigiKey Programmable: Verified
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 256Mbit
Mounting Type: Surface Mount
Package / Case: 64-LBGA
Packaging: Tray
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S29GL256S10TFI010 S29GL256S10TFI010 Infineon Technologies infineon-s29gl01gs-s29gl512s-s29gl256s-s29gl128s-128-mb-256-mb-512-mb-1-gb-gl-s-mirrorbit-tm-flash-parallel-3-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium Description: IC FLASH 256MBIT PARALLEL 56TSOP
Packaging: Tray
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Part Status: Active
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 16M x 16
DigiKey Programmable: Verified
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S29GL256P90TFIR10 S29GL256P90TFIR10 Infineon Technologies infineon-s29gl01gp-s29gl512p-s29gl256p-s29gl128p-1-gbit512256128-mbit-3-v-page-flash-with-90-nm-mirrorbit-process-technology-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ed7850458a5&utm_source=cyp Description: IC FLASH 256MBIT PARALLEL 56TSOP
Packaging: Tray
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Part Status: Active
Write Cycle Time - Word, Page: 90ns
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
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IMBG65R048M1HXTMA1 Infineon-IMBG65R048M1H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7ddc01d7017e49e77323159f
IMBG65R048M1HXTMA1
Hersteller: Infineon Technologies
Description: SILICON CARBIDE MOSFET PG-TO263-
Input Capacitance (Ciss) (Max) @ Vds: 1118 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 18 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): +23V, -5V
Drive Voltage (Max Rds On, Min Rds On): 18V
Part Status: Active
Supplier Device Package: PG-TO263-7-12
Vgs(th) (Max) @ Id: 5.7V @ 6mA
Power Dissipation (Max): 183W (Tc)
Rds On (Max) @ Id, Vgs: 64mOhm @ 20.1A, 18V
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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IMBG65R048M1HXTMA1 Infineon-IMBG65R048M1H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7ddc01d7017e49e77323159f
IMBG65R048M1HXTMA1
Hersteller: Infineon Technologies
Description: SILICON CARBIDE MOSFET PG-TO263-
Input Capacitance (Ciss) (Max) @ Vds: 1118 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 18 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): +23V, -5V
Drive Voltage (Max Rds On, Min Rds On): 18V
Part Status: Active
Supplier Device Package: PG-TO263-7-12
Vgs(th) (Max) @ Id: 5.7V @ 6mA
Power Dissipation (Max): 183W (Tc)
Rds On (Max) @ Id, Vgs: 64mOhm @ 20.1A, 18V
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Cut Tape (CT)
auf Bestellung 15 Stücke:
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AnzahlPreis
2+15.14 EUR
10+10.37 EUR
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IMBG65R057M1HXTMA1 Infineon-IMBG65R057M1H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7ddc01d7017e49e7874715a2
IMBG65R057M1HXTMA1
Hersteller: Infineon Technologies
Description: SILICON CARBIDE MOSFET PG-TO263-
Input Capacitance (Ciss) (Max) @ Vds: 930 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 18 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): +23V, -5V
Drive Voltage (Max Rds On, Min Rds On): 18V
Part Status: Active
Supplier Device Package: PG-TO263-7-12
Vgs(th) (Max) @ Id: 5.7V @ 5mA
Power Dissipation (Max): 161W (Tc)
Rds On (Max) @ Id, Vgs: 74mOhm @ 16.7A, 18V
Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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IMBG65R057M1HXTMA1 Infineon-IMBG65R057M1H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7ddc01d7017e49e7874715a2
IMBG65R057M1HXTMA1
Hersteller: Infineon Technologies
Description: SILICON CARBIDE MOSFET PG-TO263-
Input Capacitance (Ciss) (Max) @ Vds: 930 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 18 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): +23V, -5V
Drive Voltage (Max Rds On, Min Rds On): 18V
Part Status: Active
Supplier Device Package: PG-TO263-7-12
Vgs(th) (Max) @ Id: 5.7V @ 5mA
Power Dissipation (Max): 161W (Tc)
Rds On (Max) @ Id, Vgs: 74mOhm @ 16.7A, 18V
Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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IMBG65R083M1HXTMA1 Infineon-IMBG65R083M1H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7ddc01d7017e49f0a426164d
IMBG65R083M1HXTMA1
Hersteller: Infineon Technologies
Description: SILICON CARBIDE MOSFET PG-TO263-
Input Capacitance (Ciss) (Max) @ Vds: 624 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 18 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): +23V, -5V
Drive Voltage (Max Rds On, Min Rds On): 18V
Supplier Device Package: PG-TO263-7-12
Vgs(th) (Max) @ Id: 5.7V @ 3.3mA
Power Dissipation (Max): 126W (Tc)
Rds On (Max) @ Id, Vgs: 111mOhm @ 11.2A, 18V
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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IMBG65R083M1HXTMA1 Infineon-IMBG65R083M1H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7ddc01d7017e49f0a426164d
IMBG65R083M1HXTMA1
Hersteller: Infineon Technologies
Description: SILICON CARBIDE MOSFET PG-TO263-
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 624 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 18 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): +23V, -5V
Drive Voltage (Max Rds On, Min Rds On): 18V
Supplier Device Package: PG-TO263-7-12
Vgs(th) (Max) @ Id: 5.7V @ 3.3mA
Power Dissipation (Max): 126W (Tc)
Rds On (Max) @ Id, Vgs: 111mOhm @ 11.2A, 18V
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Produkt ist nicht verfügbar
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IMBG65R107M1HXTMA1 Infineon-IMBG65R107M1H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7ddc01d7017e49f0b8bd1650
IMBG65R107M1HXTMA1
Hersteller: Infineon Technologies
Description: SILICON CARBIDE MOSFET PG-TO263-
Input Capacitance (Ciss) (Max) @ Vds: 496 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 18 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): +23V, -5V
Drive Voltage (Max Rds On, Min Rds On): 18V
Part Status: Active
Supplier Device Package: PG-TO263-7-12
Vgs(th) (Max) @ Id: 5.7V @ 2.6mA
Power Dissipation (Max): 110W (Tc)
Rds On (Max) @ Id, Vgs: 141mOhm @ 8.9A, 18V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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IMBG65R107M1HXTMA1 Infineon-IMBG65R107M1H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7ddc01d7017e49f0b8bd1650
IMBG65R107M1HXTMA1
Hersteller: Infineon Technologies
Description: SILICON CARBIDE MOSFET PG-TO263-
Input Capacitance (Ciss) (Max) @ Vds: 496 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 18 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): +23V, -5V
Drive Voltage (Max Rds On, Min Rds On): 18V
Part Status: Active
Supplier Device Package: PG-TO263-7-12
Vgs(th) (Max) @ Id: 5.7V @ 2.6mA
Power Dissipation (Max): 110W (Tc)
Rds On (Max) @ Id, Vgs: 141mOhm @ 8.9A, 18V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Cut Tape (CT)
auf Bestellung 810 Stücke:
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AnzahlPreis
2+10.6 EUR
10+7.13 EUR
100+5.2 EUR
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TZ740N22KS01HPSA3 Infineon-TZ740N-DS-v03_05-EN.pdf?fileId=db3a304412b407950112b42f88224c15
Hersteller: Infineon Technologies
Description: MOODULE
Current - On State (It (RMS)) (Max): 1500 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (AV)) (Max): 819 A
Number of SCRs, Diodes: 1 SCR
Current - Non Rep. Surge 50, 60Hz (Itsm): 30000A @ 50Hz
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Hold (Ih) (Max): 500 mA
Structure: Single
Operating Temperature: 125°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
Voltage - Off State: 2.2 kV
Produkt ist nicht verfügbar
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TLE9261BQXXUMA2 Infineon-TLE9261BQX-DataSheet-v01_20-EN.pdf?fileId=5546d462602a9dc8016073c1554f5b04
TLE9261BQXXUMA2
Hersteller: Infineon Technologies
Description: OPTIREG SYST BASIS CHIPS
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 3V ~ 28V
Applications: System Basis Chip
Current - Supply: 3.5mA
Supplier Device Package: PG-VQFN-48-79
Produkt ist nicht verfügbar
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CY8C4013LQI-411T Infineon-PSoC_4_PSoC_4000_Family_Programmable_System-on-Chip_(PSoC)-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecc2b7d45ee&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY8C4013LQI-411T
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 8KB FLASH 16QFN
DigiKey Programmable: Not Verified
Number of I/O: 12
Part Status: Active
Supplier Device Package: 16-QFN (3x3)
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Connectivity: I2C
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Core Size: 32-Bit
Data Converters: D/A 1x7b, 1x8b
Core Processor: ARM® Cortex®-M0
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 2K x 8
Program Memory Size: 8KB (8K x 8)
Speed: 16MHz
Mounting Type: Surface Mount
Package / Case: 16-UFQFN Exposed Pad
Packaging: Tape & Reel (TR)
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
2500+1.05 EUR
Mindestbestellmenge: 2500 Stücke
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CY8C4013LQI-411T Infineon-PSoC_4_PSoC_4000_Family_Programmable_System-on-Chip_(PSoC)-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecc2b7d45ee&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY8C4013LQI-411T
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 8KB FLASH 16QFN
DigiKey Programmable: Not Verified
Number of I/O: 12
Part Status: Active
Supplier Device Package: 16-QFN (3x3)
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Connectivity: I2C
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Core Size: 32-Bit
Data Converters: D/A 1x7b, 1x8b
Core Processor: ARM® Cortex®-M0
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 2K x 8
Program Memory Size: 8KB (8K x 8)
Speed: 16MHz
Mounting Type: Surface Mount
Package / Case: 16-UFQFN Exposed Pad
Packaging: Cut Tape (CT)
auf Bestellung 7158 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
8+2.36 EUR
11+1.72 EUR
25+1.56 EUR
100+1.39 EUR
250+1.3 EUR
500+1.25 EUR
1000+1.21 EUR
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CY8C3244LTI-130 Infineon-PSoC_3_CY8C32_Programmable_System-on-Chip-DataSheet-v28_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec7aa5b3f68&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files&redirId=File_1_2_960
CY8C3244LTI-130
Hersteller: Infineon Technologies
Description: IC MCU 8BIT 16KB FLASH 68QFN
Number of I/O: 38
Part Status: Active
Supplier Device Package: 68-QFN (8x8)
Peripherals: CapSense, DMA, POR, PWM, WDT
Connectivity: EBI/EMI, I2C, LINbus, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Core Size: 8-Bit
Data Converters: A/D 16x12b; D/A 1x8b
Core Processor: 8051
EEPROM Size: 512 x 8
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 2K x 8
Program Memory Size: 16KB (16K x 8)
Speed: 50MHz
Mounting Type: Surface Mount
Package / Case: 68-VFQFN Exposed Pad
Packaging: Tray
DigiKey Programmable: Not Verified
auf Bestellung 2519 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
2+10.23 EUR
10+9.24 EUR
25+8.81 EUR
80+7.65 EUR
260+7.57 EUR
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CY8C3245AXI-158 Infineon-PSoC_3_CY8C32_Programmable_System-on-Chip-DataSheet-v28_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec7aa5b3f68&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files&redirId=File_1_2_960
CY8C3245AXI-158
Hersteller: Infineon Technologies
Description: IC MCU 8BIT 32KB FLASH 100TQFP
RAM Size: 4K x 8
Program Memory Size: 32KB (32K x 8)
Speed: 50MHz
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Packaging: Tray
Number of I/O: 62
Supplier Device Package: 100-TQFP (14x14)
Peripherals: CapSense, DMA, POR, PWM, WDT
Connectivity: EBI/EMI, I2C, LINbus, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Core Size: 8-Bit
Data Converters: A/D 16x12b; D/A 1x8b
Core Processor: 8051
EEPROM Size: 1K x 8
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
DigiKey Programmable: Not Verified
auf Bestellung 450 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
2+15.77 EUR
10+14.25 EUR
25+13.58 EUR
90+11.79 EUR
270+11.26 EUR
450+10.27 EUR
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CY8C3445LTI-078 download
CY8C3445LTI-078
Hersteller: Infineon Technologies
Description: IC MCU 8BIT 32KB FLASH 48QFN
Number of I/O: 25
Part Status: Active
Supplier Device Package: 48-QFN (7x7)
DigiKey Programmable: Not Verified
Peripherals: CapSense, DMA, LCD, POR, PWM, WDT
Connectivity: EBI/EMI, I2C, LINbus, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Core Size: 8-Bit
Data Converters: A/D 16x12b; D/A 2x8b
Core Processor: 8051
EEPROM Size: 1K x 8
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 4K x 8
Program Memory Size: 32KB (32K x 8)
Speed: 50MHz
Mounting Type: Surface Mount
Package / Case: 48-VFQFN Exposed Pad
Packaging: Tray
Produkt ist nicht verfügbar
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IPD079N06L3GATMA1 Infineon-IPD079N06L3-DS-v02_00-en.pdf?fileId=db3a30431ddc9372011e2b5528634dc0
IPD079N06L3GATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 50A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 7.9mOhm @ 50A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 34µA
Supplier Device Package: PG-TO252-3-311
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4900 pF @ 30 V
auf Bestellung 8178 Stücke:
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AnzahlPreis
6+3.03 EUR
10+1.92 EUR
100+1.28 EUR
500+1.01 EUR
1000+0.92 EUR
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IDW30E60AFKSA1 Part_Number_Guide_Web.pdf
IDW30E60AFKSA1
Hersteller: Infineon Technologies
Description: DIODE GEN PURP 600V 60A TO247-3
Packaging: Bulk
Current - Reverse Leakage @ Vr: 40 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: PG-TO247-3
Current - Average Rectified (Io): 60A
Technology: Standard
Reverse Recovery Time (trr): 143 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-3
Produkt ist nicht verfügbar
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IDW30E65D1 INFNS30296-1.pdf?t.download=true&u=5oefqw
IDW30E65D1
Hersteller: Infineon Technologies
Description: DIODE GP 650V 60A TO247-3-1
Produkt ist nicht verfügbar
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S6J336CHSBSV20000 Infineon-S6J3360_Series_S6J3370_Series_32-bit_Arm_Cortex-R5F_TRAVEO_T1G_Microcontroller-AdditionalTechnicalInformation-v12_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee4479d6ae2
S6J336CHSBSV20000
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 112KB FLASH 144LQFP
Packaging: Tray
Package / Case: 144-LQFP
Mounting Type: Surface Mount
Speed: 132MHz
Program Memory Size: 112KB (112K x 8)
RAM Size: 128K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: Arm® Cortex®-R5F
Data Converters: A/D 40x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, I2C, LINbus, UART/USART
Peripherals: DMA, I2S, LVD, POR, PWM, WDT
Supplier Device Package: 144-LQFP (20x20)
Part Status: Active
Number of I/O: 94
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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SAF-XE160FU-8F66RAAFXUMA1 Product_Catalog_2012.pdf?t.download=true&u=5oefqw
SAF-XE160FU-8F66RAAFXUMA1
Hersteller: Infineon Technologies
Description: 16-BIT FLASH RISC MCU
auf Bestellung 4797 Stücke:
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AnzahlPreis
130+3.83 EUR
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IPF042N10NF2SATMA1 Infineon-IPF042N10NF2S-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c83cd30810183f49616ca62b7
IPF042N10NF2SATMA1
Hersteller: Infineon Technologies
Description: MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 139A (Tc)
Rds On (Max) @ Id, Vgs: 4.25mOhm @ 80A, 10V
Power Dissipation (Max): 3.8W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 93µA
Supplier Device Package: PG-TO263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 50 V
Produkt ist nicht verfügbar
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IPF042N10NF2SATMA1 Infineon-IPF042N10NF2S-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c83cd30810183f49616ca62b7
IPF042N10NF2SATMA1
Hersteller: Infineon Technologies
Description: MOSFET
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 139A (Tc)
Rds On (Max) @ Id, Vgs: 4.25mOhm @ 80A, 10V
Power Dissipation (Max): 3.8W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 93µA
Supplier Device Package: PG-TO263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 50 V
auf Bestellung 141 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
4+4.49 EUR
10+2.89 EUR
100+1.97 EUR
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CYW20820A1KFBG Infineon-CYW20820_AIROC_Bluetooth_Bluetooth_LE_system_on_chip-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c8929aa4d0189bd07ff731403
CYW20820A1KFBG
Hersteller: Infineon Technologies
Description: IC RF TXRX+MCU BLE 62FBGA
DigiKey Programmable: Not Verified
Part Status: Active
Serial Interfaces: ADC, GPIO, I2C, I2S, PCM, SPI, UART
RF Family/Standard: Bluetooth
GPIO: 22
Supplier Device Package: 62-FBGA (4.5x4.5)
Current - Transmitting: 18.58mA ~ 22.48mA
Data Rate (Max): 3Mbps
Current - Receiving: 6.28mA ~ 6.87mA
Protocol: Bluetooth v5.2 + EDR
Power - Output: 11.5dBm
Voltage - Supply: 1.71V ~ 3.3V
Operating Temperature: -30°C ~ 85°C
Type: TxRx + MCU
Memory Size: 256kB Flash, 176kB RAM, 1MB ROM
Sensitivity: -94.5dBm
Package / Case: 62-WFBGA
Packaging: Tray
Frequency: 2.4GHz
Mounting Type: Surface Mount
auf Bestellung 4377 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
2+9.15 EUR
10+7.07 EUR
25+6.43 EUR
80+5.76 EUR
230+5.27 EUR
490+4.97 EUR
980+4.9 EUR
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D4810N24TVFXPSA1 D4810N.pdf
D4810N24TVFXPSA1
Hersteller: Infineon Technologies
Description: DIODE GEN PURP 2.4KV 4810A
Current - Average Rectified (Io): 4810A
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: DO-200AE
Packaging: Bulk
Current - Reverse Leakage @ Vr: 200 mA @ 2400 V
Voltage - Forward (Vf) (Max) @ If: 1.078 V @ 4000 A
Voltage - DC Reverse (Vr) (Max): 2400 V
Part Status: Obsolete
Operating Temperature - Junction: -40°C ~ 150°C
Produkt ist nicht verfügbar
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IRFU3607TRL701P irfr3607pbf.pdf?fileId=5546d462533600a401535631463620a7
IRFU3607TRL701P
Hersteller: Infineon Technologies
Description: MOSFET N CH 75V 56A IPAK
Input Capacitance (Ciss) (Max) @ Vds: 3070 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V
Drain to Source Voltage (Vdss): 75 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: IPAK (TO-251AA)
Vgs(th) (Max) @ Id: 4V @ 100µA
Power Dissipation (Max): 140W (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 46A, 10V
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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S6E2H14G0AGB30000 ?utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
S6E2H14G0AGB30000
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 288KB FLASH 121FBGA
Data Converters: A/D 24x12b; D/A 2x12b
Core Processor: ARM® Cortex®-M4F
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 32K x 8
Program Memory Size: 288KB (288K x 8)
Speed: 160MHz
Mounting Type: Surface Mount
Package / Case: 121-TFBGA
Packaging: Tray
Number of I/O: 100
Part Status: Active
Supplier Device Package: 121-FBGA (6x6)
Peripherals: DMA, LVD, POR, PWM, WDT
Connectivity: CSIO, EBI/EMI, I2C, LINbus, UART/USART
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit
DigiKey Programmable: Not Verified
auf Bestellung 488 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
2+14.1 EUR
10+10.97 EUR
25+10.19 EUR
100+9.33 EUR
250+8.92 EUR
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S6E2H14G0AGB3000A Infineon-S6E2H_Series_32-bit_Arm_Cortex-M4F_FM4_Microcontroller-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed234f14ede
S6E2H14G0AGB3000A
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 288KB FLASH 121FBGA
Number of I/O: 100
Part Status: Active
Supplier Device Package: 121-FBGA (6x6)
Peripherals: DMA, LVD, POR, PWM, WDT
Connectivity: CSIO, EBI/EMI, I2C, LINbus, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit
Data Converters: A/D 24x12b SAR; D/A 2x12b
Core Processor: ARM® Cortex®-M4F
Program Memory Type: FLASH
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 125°C (TJ)
RAM Size: 32K x 8
Program Memory Size: 288KB (288K x 8)
Speed: 160MHz
Mounting Type: Surface Mount
Package / Case: 121-TFBGA
Packaging: Tray
DigiKey Programmable: Not Verified
auf Bestellung 4900 Stücke:
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1+20.77 EUR
10+16.45 EUR
25+15.38 EUR
100+14.19 EUR
490+14.12 EUR
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S6E2H14E0AGV2000M Infineon-S6E2H_Series_32-bit_Arm_Cortex-M4F_FM4_Microcontroller-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed234f14ede
S6E2H14E0AGV2000M
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 288KB FLASH 80LQFP
Number of I/O: 63
Part Status: Active
Supplier Device Package: 80-LQFP (12x12)
Peripherals: DMA, LVD, POR, PWM, WDT
Connectivity: CSIO, EBI/EMI, I2C, LINbus, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit
Data Converters: A/D 16x12b SAR; D/A 2x12b
Core Processor: ARM® Cortex®-M4F
Program Memory Type: FLASH
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 125°C (TJ)
DigiKey Programmable: Not Verified
RAM Size: 32K x 8
Program Memory Size: 288KB (288K x 8)
Speed: 160MHz
Mounting Type: Surface Mount
Package / Case: 80-LQFP
Packaging: Tray
auf Bestellung 1190 Stücke:
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2+14.85 EUR
10+11.54 EUR
25+10.71 EUR
119+9.71 EUR
238+9.39 EUR
476+9.12 EUR
952+8.9 EUR
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S6E2GK6JHAGV2000A download
S6E2GK6JHAGV2000A
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 512KB FLASH 176LQFP
DigiKey Programmable: Not Verified
Number of I/O: 153
Supplier Device Package: 176-LQFP (24x24)
Peripherals: DMA, I2S, LVD, POR, PWM, WDT
Connectivity: CSIO, EBI/EMI, I2C, LINbus, SD, SmartCard, SPI, UART/USART, USB
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit Single-Core
Data Converters: A/D 32x12b
Core Processor: ARM® Cortex®-M4F
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 128K x 8
Program Memory Size: 512KB (512K x 8)
Speed: 180MHz
Mounting Type: Surface Mount
Package / Case: 176-LQFP
Packaging: Tray
Produkt ist nicht verfügbar
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S6E2H46E0AGV20000 ?utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
S6E2H46E0AGV20000
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 544KB FLASH 80LQFP
Speed: 160MHz
Mounting Type: Surface Mount
Package / Case: 80-LQFP
Packaging: Tray
Number of I/O: 63
Part Status: Active
Supplier Device Package: 80-LQFP (12x12)
Peripherals: DMA, LVD, POR, PWM, WDT
Connectivity: CANbus, CSIO, EBI/EMI, I²C, LINbus, UART/USART
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit Single-Core
Data Converters: A/D 16x12b; D/A 2x12b
Core Processor: ARM® Cortex®-M4F
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 64K x 8
Program Memory Size: 544KB (544K x 8)
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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S6E2H44E0AGV20000 ?utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
S6E2H44E0AGV20000
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 288KB FLASH 80LQFP
DigiKey Programmable: Not Verified
Number of I/O: 63
Part Status: Active
Supplier Device Package: 80-LQFP (12x12)
Peripherals: DMA, LVD, POR, PWM, WDT
Connectivity: CANbus, CSIO, EBI/EMI, I2C, LINbus, UART/USART
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit Single-Core
Data Converters: A/D 16x12b; D/A 2x12b
Core Processor: ARM® Cortex®-M4F
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 32K x 8
Program Memory Size: 288KB (288K x 8)
Speed: 160MHz
Mounting Type: Surface Mount
Package / Case: 80-LQFP
Packaging: Tray
Produkt ist nicht verfügbar
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S6E2GK8H0AGV2000A download
S6E2GK8H0AGV2000A
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 1MB FLASH 144LQFP
Number of I/O: 121
Part Status: Active
Supplier Device Package: 144-LQFP (20x20)
Peripherals: DMA, I2S, LVD, POR, PWM, WDT
Connectivity: CSIO, EBI/EMI, I2C, LINbus, SD, SmartCard, SPI, UART/USART, USB
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit Single-Core
Data Converters: A/D 24x12b
Core Processor: ARM® Cortex®-M4F
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 192K x 8
Program Memory Size: 1MB (1M x 8)
Speed: 180MHz
Mounting Type: Surface Mount
Package / Case: 144-LQFP
Packaging: Tray
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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S6E2GM8J0AGV2000A download
S6E2GM8J0AGV2000A
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 1MB FLASH 176LQFP
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit Single-Core
Data Converters: A/D 32x12b
Core Processor: ARM® Cortex®-M4F
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 192K x 8
Program Memory Size: 1MB (1M x 8)
Speed: 180MHz
Mounting Type: Surface Mount
Package / Case: 176-LQFP
Packaging: Tray
Number of I/O: 153
Part Status: Active
Supplier Device Package: 176-LQFP (24x24)
Peripherals: DMA, I2S, LVD, POR, PWM, WDT
Connectivity: CANbus, CSIO, EBI/EMI, Ethernet, I2C, LINbus, SD, SmartCard, SPI, UART/USART, USB
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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S6E2H44E0AGV2000M Infineon-S6E2H_Series_32-bit_Arm_Cortex-M4F_FM4_Microcontroller-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed234f14ede
S6E2H44E0AGV2000M
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 288KB FLASH 80LQFP
DigiKey Programmable: Not Verified
Number of I/O: 63
Part Status: Active
Supplier Device Package: 80-LQFP (12x12)
Peripherals: DMA, LVD, POR, PWM, WDT
Connectivity: CANbus, CSIO, EBI/EMI, I2C, LINbus, UART/USART
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit Single-Core
Data Converters: A/D 16x12b; D/A 2x12b
Core Processor: ARM® Cortex®-M4F
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 32K x 8
Program Memory Size: 288KB (288K x 8)
Speed: 160MHz
Mounting Type: Surface Mount
Package / Case: 80-LQFP
Packaging: Tray
Produkt ist nicht verfügbar
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S6E2H16G0AGV20000 ?utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
S6E2H16G0AGV20000
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 544KB FLASH 120LQFP
Produkt ist nicht verfügbar
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S6E2H44G0AGB3000A ?utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
S6E2H44G0AGB3000A
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 288KB FLASH 121FBGA
Core Size: 32-Bit Single-Core
Data Converters: A/D 24x12b; D/A 2x12b
Core Processor: ARM® Cortex®-M4F
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 32K x 8
Program Memory Size: 288KB (288K x 8)
Speed: 160MHz
Mounting Type: Surface Mount
Package / Case: 121-TFBGA
Packaging: Tray
DigiKey Programmable: Not Verified
Number of I/O: 100
Supplier Device Package: 121-FBGA (6x6)
Peripherals: DMA, LVD, POR, PWM, WDT
Connectivity: CANbus, CSIO, EBI/EMI, I2C, LINbus, UART/USART
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Produkt ist nicht verfügbar
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S6E2H16G0AGB3000A ?utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
S6E2H16G0AGB3000A
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 544KB FLASH 121FBGA
DigiKey Programmable: Not Verified
Number of I/O: 100
Part Status: Active
Supplier Device Package: 121-FBGA (6x6)
Peripherals: DMA, LVD, POR, PWM, WDT
Connectivity: CSIO, EBI/EMI, I2C, LINbus, UART/USART
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit
Data Converters: A/D 24x12b; D/A 2x12b
Core Processor: ARM® Cortex®-M4F
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 64K x 8
Program Memory Size: 544KB (544K x 8)
Speed: 160MHz
Mounting Type: Surface Mount
Package / Case: 121-TFBGA
Packaging: Tray
auf Bestellung 4900 Stücke:
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2+15.95 EUR
10+12.47 EUR
25+11.6 EUR
100+10.64 EUR
490+9.92 EUR
980+9.69 EUR
1470+9.58 EUR
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S6E2H44F0AGV20000 ?utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
S6E2H44F0AGV20000
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 288KB FLASH 100LQFP
DigiKey Programmable: Not Verified
Number of I/O: 80
Supplier Device Package: 100-LQFP (14x14)
Peripherals: DMA, LVD, POR, PWM, WDT
Connectivity: CANbus, CSIO, EBI/EMI, I2C, LINbus, UART/USART
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit Single-Core
Data Converters: A/D 24x12b; D/A 2x12b
Core Processor: ARM® Cortex®-M4F
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 32K x 8
Program Memory Size: 288KB (288K x 8)
Speed: 160MHz
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Packaging: Tray
Produkt ist nicht verfügbar
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S6E2H14F0AGV20000 infineon-psoc-4-4200-ble-family-datasheet-programmable-system-on-chip-datasheet-en.pdf
S6E2H14F0AGV20000
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 288KB FLASH 100LQFP
Number of I/O: 80
Part Status: Active
Supplier Device Package: 100-LQFP (14x14)
Peripherals: DMA, LVD, POR, PWM, WDT
Connectivity: CSIO, EBI/EMI, I2C, LINbus, UART/USART
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit
Data Converters: A/D 24x12b; D/A 2x12b
Core Processor: ARM® Cortex®-M4F
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 32K x 8
Program Memory Size: 288KB (288K x 8)
Speed: 160MHz
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Packaging: Tray
DigiKey Programmable: Not Verified
auf Bestellung 900 Stücke:
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AnzahlPreis
2+11.69 EUR
10+9.09 EUR
90+7.77 EUR
180+7.51 EUR
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S6E2GM8H0AGV2000A download
S6E2GM8H0AGV2000A
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 1MB FLASH 144LQFP
DigiKey Programmable: Not Verified
Number of I/O: 121
Supplier Device Package: 144-LQFP (20x20)
Peripherals: DMA, I2S, LVD, POR, PWM, WDT
Connectivity: CANbus, CSIO, EBI/EMI, Ethernet, I2C, LINbus, SD, SmartCard, SPI, UART/USART, USB
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit Single-Core
Data Converters: A/D 24x12b
Core Processor: ARM® Cortex®-M4F
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 192K x 8
Program Memory Size: 1MB (1M x 8)
Speed: 180MHz
Mounting Type: Surface Mount
Package / Case: 144-LQFP
Packaging: Tray
Produkt ist nicht verfügbar
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S6E2H16F0AGV20000 ?utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
S6E2H16F0AGV20000
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 544KB FLASH 100LQFP
Number of I/O: 80
Part Status: Active
Supplier Device Package: 100-LQFP (14x14)
Peripherals: DMA, LVD, POR, PWM, WDT
Connectivity: CSIO, EBI/EMI, I2C, LINbus, UART/USART
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit Single-Core
Data Converters: A/D 24x12b; D/A 2x12b
Core Processor: ARM® Cortex®-M4F
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 64K x 8
Program Memory Size: 544KB (544K x 8)
Speed: 160MHz
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Packaging: Tray
DigiKey Programmable: Not Verified
auf Bestellung 900 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
2+16.7 EUR
10+13.04 EUR
90+11.18 EUR
180+10.8 EUR
270+10.61 EUR
540+10.32 EUR
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S6E2H14G0AGV20000 ?utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
S6E2H14G0AGV20000
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 288KB FLASH 120LQFP
Oscillator Type: Internal
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 32K x 8
Program Memory Size: 288KB (288K x 8)
Speed: 160MHz
Mounting Type: Surface Mount
Package / Case: 120-LQFP
Packaging: Tray
DigiKey Programmable: Not Verified
Number of I/O: 100
Supplier Device Package: 120-LQFP (16x16)
Peripherals: DMA, LVD, POR, PWM, WDT
Connectivity: CSIO, EBI/EMI, I2C, LINbus, UART/USART
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit Single-Core
Data Converters: A/D 24x12b; D/A 2x12b
Core Processor: ARM® Cortex®-M4F
Program Memory Type: FLASH
Produkt ist nicht verfügbar
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S6E2GK6J0AGV2000A Infineon-S6E2G_Series_32_bit_ARM(R)_Cortex(R)_M4F_FM4_Microcontroller-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed1e6ff4e32&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files&r
S6E2GK6J0AGV2000A
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 512KB FLASH 176LQFP
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 128K x 8
Program Memory Size: 512KB (512K x 8)
Speed: 180MHz
Mounting Type: Surface Mount
Package / Case: 176-LQFP
Packaging: Tray
DigiKey Programmable: Not Verified
Number of I/O: 153
Supplier Device Package: 176-LQFP (24x24)
Peripherals: DMA, I2S, LVD, POR, PWM, WDT
Connectivity: CSIO, EBI/EMI, I2C, LINbus, SD, SmartCard, SPI, UART/USART, USB
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit Single-Core
Data Converters: A/D 32x12b
Core Processor: ARM® Cortex®-M4F
Produkt ist nicht verfügbar
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S6E2H44G0AGV20000 ?utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
S6E2H44G0AGV20000
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 288KB FLASH 120LQFP
Number of I/O: 100
Supplier Device Package: 120-LQFP (16x16)
Peripherals: DMA, LVD, POR, PWM, WDT
Connectivity: CANbus, CSIO, EBI/EMI, I2C, LINbus, UART/USART
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit Single-Core
Data Converters: A/D 24x12b; D/A 2x12b
Core Processor: ARM® Cortex®-M4F
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 32K x 8
Program Memory Size: 288KB (288K x 8)
Speed: 160MHz
Mounting Type: Surface Mount
Package / Case: 120-LQFP
Packaging: Tray
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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S6E2H16E0AGV20000 ?utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
S6E2H16E0AGV20000
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 544KB FLASH 80LQFP
DigiKey Programmable: Not Verified
Number of I/O: 63
Supplier Device Package: 80-LQFP (12x12)
Peripherals: DMA, LVD, POR, PWM, WDT
Connectivity: CSIO, EBI/EMI, I²C, LINbus, UART/USART
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit Single-Core
Data Converters: A/D 16x12b; D/A 2x12b
Core Processor: ARM® Cortex®-M4F
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 64K x 8
Program Memory Size: 544KB (544K x 8)
Speed: 160MHz
Mounting Type: Surface Mount
Package / Case: 80-LQFP
Packaging: Tray
Produkt ist nicht verfügbar
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IKW75N120CH7XKSA1 Infineon-IKW75N120CH7-DataSheet-v01_10-EN.pdf?fileId=8ac78c8c84a33f400184e1ecb5240a3a
IKW75N120CH7XKSA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 1200V 92A TO247-3
Power - Max: 549 W
Current - Collector Pulsed (Icm): 300 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 92 A
Part Status: Active
Gate Charge: 535 nC
Switching Energy: 4.22mJ (on), 1.66mJ (off)
Td (on/off) @ 25°C: 55ns/461ns
IGBT Type: Trench Field Stop
Supplier Device Package: PG-TO247-3-U06
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 75A
Reverse Recovery Time (trr): 145 ns
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
auf Bestellung 289 Stücke:
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AnzahlPreis
2+12.83 EUR
30+7.48 EUR
120+6.31 EUR
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IKQ75N120CH7XKSA1 Infineon-IKQ75N120CH7-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c84a33f400184e2a14ad72d65
IKQ75N120CH7XKSA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 1200V 82A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 149 ns
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 75A
Supplier Device Package: PG-TO247-3-U01
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 56ns/470ns
Switching Energy: 5.28mJ (on), 1.76mJ (off)
Gate Charge: 518 nC
Part Status: Active
Current - Collector (Ic) (Max): 82 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 549 W
auf Bestellung 403 Stücke:
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AnzahlPreis
2+15.38 EUR
30+9.12 EUR
120+7.74 EUR
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CY15B204QI-20LPXI Infineon-CY15B204QI-Excelon-LP-4-Mbit-(512x8)-Serial-(SPI)-F-RAM-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7e7124d1017f2089a6d33dd5
CY15B204QI-20LPXI
Hersteller: Infineon Technologies
Description: IC FRAM 4MBIT SPI 20MHZ 8GQFN
Technology: FRAM (Ferroelectric RAM)
Voltage - Supply: 1.8V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 4Mbit
Mounting Type: Surface Mount
Package / Case: 8-UQFN
Packaging: Tray
DigiKey Programmable: Not Verified
Memory Organization: 512K x 8
Access Time: 20 ns
Memory Interface: SPI
Supplier Device Package: 8-GQFN (3.23x3.28)
Memory Format: FRAM
Clock Frequency: 20 MHz
Produkt ist nicht verfügbar
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A2C04189800
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 176LQFP
DigiKey Programmable: Not Verified
Part Status: Active
Packaging: Tray
Produkt ist nicht verfügbar
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CY9AF312KPMC-G-JNCGE2 Infineon-CY9A310K_Series_32_bit_Arm_Cortex_M3_FM3_Microcontroller-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0edef47d63e4
CY9AF312KPMC-G-JNCGE2
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 160KB FLASH 48LQFP
DigiKey Programmable: Not Verified
Number of I/O: 36
Part Status: Active
Supplier Device Package: 48-LQFP (7x7)
Peripherals: DMA, LVD, POR, PWM, WDT
Connectivity: CSIO, I2C, LINbus, UART/USART, USB
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit
Data Converters: A/D 8x12b
Core Processor: ARM® Cortex®-M3
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 16K x 8
Program Memory Size: 160KB (160K x 8)
Speed: 40MHz
Mounting Type: Surface Mount
Package / Case: 48-LQFP
Packaging: Tray
Produkt ist nicht verfügbar
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S27KL0642GABHI023 Infineon-S27KL0642_S27KS0642_3.0_V_1.8_V_64_Mb_(8_MB)_HyperRAM_Self-Refresh_DRAM-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee8a1c47164
S27KL0642GABHI023
Hersteller: Infineon Technologies
Description: IC PSRAM 64MBIT HYPERBUS 24FBGA
Memory Organization: 8M x 8
Access Time: 35 ns
Memory Interface: HyperBus
Write Cycle Time - Word, Page: 35ns
Part Status: Active
Supplier Device Package: 24-FBGA (6x8)
Memory Format: PSRAM
Clock Frequency: 200 MHz
Technology: PSRAM (Pseudo SRAM)
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Volatile
Memory Size: 64Mbit
Mounting Type: Surface Mount
Package / Case: 24-VBGA
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IPB100N04S303ATMA1 IPx100N04S3-03.pdf
IPB100N04S303ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 100A TO263-3
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 80A, 10V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 4V @ 150µA
Supplier Device Package: PG-TO263-3-2
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9600 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 26463 Stücke:
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AnzahlPreis
129+3.49 EUR
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BF5030RE6327 INFNS13146-1.pdf?t.download=true&u=5oefqw
BF5030RE6327
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Current - Test: 10 mA
Voltage - Test: 3 V
Voltage - Rated: 8 V
Supplier Device Package: PG-SOT-143R-3D
Noise Figure: 1.3dB
Technology: MOSFET
Gain: 24dB
Configuration: N-Channel
Frequency: 800MHz
Mounting Type: Surface Mount
Current Rating (Amps): 25mA
Package / Case: SOT-143R
Packaging: Bulk
Produkt ist nicht verfügbar
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BF 5030 E6327 BF5030_Series.pdf
BF 5030 E6327
Hersteller: Infineon Technologies
Description: RF MOSFET 3V SOT143
Current - Test: 10 mA
Voltage - Test: 3 V
Voltage - Rated: 8 V
Supplier Device Package: PG-SOT-143-3D
Noise Figure: 1.3dB
Technology: MOSFET (Metal Oxide)
Gain: 24dB
Configuration: N-Channel
Frequency: 800MHz
Mounting Type: Surface Mount
Current Rating (Amps): 25mA
Package / Case: TO-253-4, TO-253AA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BF 5030R E6327 BF5030_Series.pdf
BF 5030R E6327
Hersteller: Infineon Technologies
Description: RF MOSFET 3V SOT143R
Current - Test: 10 mA
Voltage - Test: 3 V
Voltage - Rated: 8 V
Supplier Device Package: PG-SOT-143R-3D
Noise Figure: 1.3dB
Technology: MOSFET (Metal Oxide)
Gain: 24dB
Configuration: N-Channel
Frequency: 800MHz
Mounting Type: Surface Mount
Current Rating (Amps): 25mA
Package / Case: SOT-143R
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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CY3676 Infineon-CY2941X_CY2942X_HIGH_PERFORMANCE_PROGRAMMABLE_OSCILLATORS-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee1b4bc67bc
CY3676
Hersteller: Infineon Technologies
Description: EVAL FOR CY29412
auf Bestellung 1 Stücke:
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AnzahlPreis
1+510.61 EUR
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IAUA220N08S5N021AUMA1 Infineon-IAUA220N08S5N021-DataSheet-v01_00-EN.pdf?fileId=5546d4627956d53f01798e39cb690b3e
IAUA220N08S5N021AUMA1
Hersteller: Infineon Technologies
Description: MOSFET_(75V 120V( PG-HSOF-5
Packaging: Cut Tape (CT)
Package / Case: 5-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 220A (Tj)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 100A, 10V
Power Dissipation (Max): 211W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 120µA
Supplier Device Package: PG-HSOF-5-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7219 pF @ 40 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2844 Stücke:
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AnzahlPreis
3+6.25 EUR
10+4.11 EUR
100+2.9 EUR
500+2.64 EUR
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S29GL256P90FFIR10 128_Mbit_3_V_Page_Flash_with_90_nm_MirrorBit_Process_Technology-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed7850458a5&utm_source=cypress&utm_medium=ref
S29GL256P90FFIR10
Hersteller: Infineon Technologies
Description: IC FLASH 256MBIT PARALLEL 64FBGA
Memory Organization: 32M x 8
Access Time: 90 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 90ns
Part Status: Active
Supplier Device Package: 64-FBGA (13x11)
Memory Format: FLASH
Technology: FLASH - NOR
Voltage - Supply: 3V ~ 3.6V
DigiKey Programmable: Verified
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 256Mbit
Mounting Type: Surface Mount
Package / Case: 64-LBGA
Packaging: Tray
auf Bestellung 66 Stücke:
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AnzahlPreis
2+15.03 EUR
10+13.96 EUR
25+13.53 EUR
50+13.21 EUR
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S29GL256S10TFI010 infineon-s29gl01gs-s29gl512s-s29gl256s-s29gl128s-128-mb-256-mb-512-mb-1-gb-gl-s-mirrorbit-tm-flash-parallel-3-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium
S29GL256S10TFI010
Hersteller: Infineon Technologies
Description: IC FLASH 256MBIT PARALLEL 56TSOP
Packaging: Tray
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Part Status: Active
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 16M x 16
DigiKey Programmable: Verified
auf Bestellung 182 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
2+15.88 EUR
10+14.75 EUR
25+14.3 EUR
91+13.67 EUR
182+13.33 EUR
Mindestbestellmenge: 2 Stücke
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S29GL256P90TFIR10 infineon-s29gl01gp-s29gl512p-s29gl256p-s29gl128p-1-gbit512256128-mbit-3-v-page-flash-with-90-nm-mirrorbit-process-technology-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ed7850458a5&utm_source=cyp
S29GL256P90TFIR10
Hersteller: Infineon Technologies
Description: IC FLASH 256MBIT PARALLEL 56TSOP
Packaging: Tray
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Part Status: Active
Write Cycle Time - Word, Page: 90ns
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
auf Bestellung 121 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
1+18.27 EUR
10+16.97 EUR
25+16.45 EUR
91+15.72 EUR
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