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CY9AF141MABGL-GK9E1 CY9AF141MABGL-GK9E1 Infineon Technologies Description: IC MCU 32BIT 96KB FLASH 96FBGA
DigiKey Programmable: Not Verified
Number of I/O: 66
Supplier Device Package: 96-FBGA (6x6)
Peripherals: LVD, POR, PWM, WDT
Connectivity: CSIO, EBI/EMI, I2C, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
Core Size: 32-Bit
Data Converters: A/D 17x12b SAR
Core Processor: ARM® Cortex®-M3
Program Memory Type: FLASH
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 16K x 8
Program Memory Size: 96KB (96K x 8)
Speed: 40MHz
Mounting Type: Surface Mount
Package / Case: 96-LFBGA
Packaging: Tray
Produkt ist nicht verfügbar
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CY9AF141NABGL-GK9E1 Infineon Technologies Description: MM MCU
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1980 Stücke
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CY9AF141NBBGL-GK9E1 CY9AF141NBBGL-GK9E1 Infineon Technologies Description: IC MCU 32BIT 64KB FLASH 112BGA
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1980 Stücke
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FF600R17KE3B2S1NOSA1 Infineon Technologies i.MX%206%20Ultra%20Light.pdf Description: FF600R17 - INSULATED GATE BIPOLA
Packaging: Bulk
Part Status: Active
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FF600R12IE4VBOSA1 Infineon Technologies Infineon-FF600R12IE4V-DS-v02_00-en_de.pdf?fileId=5546d46145f1f3a40145f52ca8cd031e Description: IGBT MODULE 1200V 600A 3350W
Packaging: Bulk
Part Status: Active
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 600A
NTC Thermistor: Yes
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 600 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 3350 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 37000 pF @ 25 V
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FF600R12IE4PNOSA1 Infineon Technologies Description: IGBT MOD 1200V 600A 3350W MOD
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 600A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 600 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 3350 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 37 nF @ 25 V
Produkt ist nicht verfügbar
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FF600R12KE3NOSA1 Infineon Technologies FF600R12KE3_Rev2.0_2002-07-30.pdf Description: IGBT MOD 1200V 850A 2800W MOD
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 600A
NTC Thermistor: No
Supplier Device Package: Module
Current - Collector (Ic) (Max): 850 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 2800 W
Current - Collector Cutoff (Max): 5 mA
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FF600R12IP4VBOSA1 FF600R12IP4VBOSA1 Infineon Technologies Infineon-FF600R12IP4V-DS-v02_00-en_de.pdf?fileId=5546d46145f1f3a40145f5704bb30790 Description: IGBT MOD 1200V 600A 3350W MOD
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 600A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 600 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 3350 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 37 nF @ 25 V
Produkt ist nicht verfügbar
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CY8C3666AXI-052 CY8C3666AXI-052 Infineon Technologies #!?fileId=8ac78c8c7d0d8da4017d0ec73d263e88 Description: IC MCU 8BIT 64KB FLASH 100TQFP
DigiKey Programmable: Not Verified
Number of I/O: 62
Part Status: Active
Supplier Device Package: 100-TQFP (14x14)
Peripherals: CapSense, DMA, POR, PWM, WDT
Connectivity: EBI/EMI, I2C, LINbus, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Core Size: 8-Bit
Data Converters: A/D 16x12b; D/A 4x8b
Core Processor: 8051
EEPROM Size: 2K x 8
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 8K x 8
Program Memory Size: 64KB (64K x 8)
Speed: 67MHz
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Packaging: Tray
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10+28.06 EUR
90+24.34 EUR
180+23.56 EUR
270+23.18 EUR
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CY8C3665AXI-198 CY8C3665AXI-198 Infineon Technologies #!?fileId=8ac78c8c7d0d8da4017d0ec73d263e88 Description: IC MCU 8BIT 32KB FLASH 100TQFP
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CY8C3665PVI-008 CY8C3665PVI-008 Infineon Technologies #!?fileId=8ac78c8c7d0d8da4017d0ec73d263e88 Description: IC MCU 8BIT 32KB FLASH 48SSOP
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CY8C3665PVI-008 CY8C3665PVI-008 Infineon Technologies #!?fileId=8ac78c8c7d0d8da4017d0ec73d263e88 Description: IC MCU 8BIT 32KB FLASH 48SSOP
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CY8C3665LTI-199 CY8C3665LTI-199 Infineon Technologies #!?fileId=8ac78c8c7d0d8da4017d0ec73d263e88 Description: IC MCU 8BIT 32KB FLASH 68QFN
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31+15.95 EUR
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CY8C3666AXI-202 CY8C3666AXI-202 Infineon Technologies #!?fileId=8ac78c8c7d0d8da4017d0ec73d263e88 Description: IC MCU 8BIT 64KB FLASH 100TQFP
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CY8C3665PVI-080 CY8C3665PVI-080 Infineon Technologies CY8C36_RevJ.pdf Description: IC MCU 8BIT 32KB FLASH 48SSOP
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CY8C3646AXE-178 CY8C3646AXE-178 Infineon Technologies Description: IC MCU 8BIT 64KB FLASH 100TQFP
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S6AE103A0DGN1B200 S6AE103A0DGN1B200 Infineon Technologies Description: IC PMIC ENERGY HARVESTING 24QFN
Mounting Type: Surface Mount
Package / Case: 24-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Supplier Device Package: 24-QFN (4x4)
Applications: Energy Harvesting
Voltage - Supply: 2V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
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S6AE103A0DGN1B200 S6AE103A0DGN1B200 Infineon Technologies Description: IC PMIC ENERGY HARVESTING 24QFN
Part Status: Obsolete
Supplier Device Package: 24-QFN (4x4)
Applications: Energy Harvesting
Voltage - Supply: 2V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 24-VFQFN Exposed Pad
Packaging: Cut Tape (CT)
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CY15V108QN-50BKXI CY15V108QN-50BKXI Infineon Technologies Infineon-CY15B108QN_CY15V108QN_8Mb_EXCELON_TM_LP_Ferroelectric_RAM_F-RAM-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c80f4d329018138198d3408be Description: IC FRAM 8MBIT SPI 50MHZ 24FBGA
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IPTC039N15NM5ATMA1 IPTC039N15NM5ATMA1 Infineon Technologies infineon-iptc039n15nm5-datasheet-en.pdf Description: OPTIMOS 5 POWER MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 190A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 319W (Tc)
Vgs(th) (Max) @ Id: 4.6V @ 243µA
Supplier Device Package: PG-HDSOP-16-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7300 pF @ 75 V
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IPTC039N15NM5ATMA1 IPTC039N15NM5ATMA1 Infineon Technologies infineon-iptc039n15nm5-datasheet-en.pdf Description: OPTIMOS 5 POWER MOSFET
Packaging: Cut Tape (CT)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 190A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 319W (Tc)
Vgs(th) (Max) @ Id: 4.6V @ 243µA
Supplier Device Package: PG-HDSOP-16-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7300 pF @ 75 V
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2+12.23 EUR
10+8.21 EUR
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100+5.94 EUR
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IRF8915TRPBF IRF8915TRPBF Infineon Technologies irf8915pbf.pdf?fileId=5546d462533600a401535610fd2d1d91 Description: MOSFET 2N-CH 20V 8.9A 8SO
Part Status: Obsolete
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 2.5V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 7.4nC @ 4.5V
Rds On (Max) @ Id, Vgs: 18.3mOhm @ 8.9A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 8.9A
Drain to Source Voltage (Vdss): 20V
Power - Max: 2W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Bulk
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D901S45T D901S45T Infineon Technologies D901S35%E2%80%A645T.pdf Description: DIODE GEN PURP 4.5KV 1225A
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IKW50N120CH7XKSA1 IKW50N120CH7XKSA1 Infineon Technologies Infineon-IKW50N120CH7-DataSheet-v01_10-EN.pdf?fileId=8ac78c8c84a33f400184e2a1715c2da0 Description: IGBT TRENCH FS 1200V 86A TO247-3
Power - Max: 398 W
Current - Collector Pulsed (Icm): 200 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 86 A
Part Status: Active
Gate Charge: 375 nC
Switching Energy: 2.33mJ (on), 1.12mJ (off)
Supplier Device Package: PG-TO247-3-U06
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 50A
Reverse Recovery Time (trr): 116 ns
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Td (on/off) @ 25°C: 39ns/319ns
IGBT Type: Trench Field Stop
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2+13.86 EUR
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CY62137FV30LL-45BVXIT CY62137FV30LL-45BVXIT Infineon Technologies Infineon-CY62137FV30_MoBL_2-Mbit_(128_K_16)_Static_RAM-DataSheet-v17_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe9762324f Description: IC SRAM 2MBIT PARALLEL 48VFBGA
Packaging: Tape & Reel (TR)
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 2Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-VFBGA (6x8)
Part Status: Active
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 128K x 16
DigiKey Programmable: Not Verified
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CY62137FV30LL-45BVXIT CY62137FV30LL-45BVXIT Infineon Technologies Infineon-CY62137FV30_MoBL_2-Mbit_(128_K_16)_Static_RAM-DataSheet-v17_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe9762324f Description: IC SRAM 2MBIT PARALLEL 48VFBGA
Packaging: Cut Tape (CT)
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 2Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-VFBGA (6x8)
Part Status: Active
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 128K x 16
DigiKey Programmable: Not Verified
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10+5.46 EUR
25+5.3 EUR
50+5.18 EUR
100+5.06 EUR
250+4.9 EUR
500+4.78 EUR
1000+4.66 EUR
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CYBT-253059-EVAL CYBT-253059-EVAL Infineon Technologies Infineon-CYBT-253059-EVAL_ARDUINO_MODULE_EVALUATION_BOARD-Quick-start-guide-UserManual-v01_00-EN.pdf?fileId=8ac78c8c7f2a768a017f643746326837 Description: AIROC CYBT-253059-EVAL KIT
Utilized IC / Part: CYBT-253059-02
Contents: Board(s), Accessories
Part Status: Active
Supplied Contents: Board(s), Accessories
Type: Transceiver; Bluetooth® 5.x (BLE)
Frequency: 2.4GHz
For Use With/Related Products: CYBT-253059-02
Packaging: Tray
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CYBT-253059-02 CYBT-253059-02 Infineon Technologies Infineon-CYBT-253059-02-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c81ae03fc0181d8239f953b1d Description: RF TXRX MOD BLUETOOTH CHIP SMD
Packaging: Tape & Reel (TR)
Package / Case: 35-SMD Module
Sensitivity: -95dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 256kB Flash, 176kB RAM
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 2.6V ~ 3.3V
Power - Output: 10.5dBm
Data Rate: 3Mbps
Protocol: Bluetooth v5.0
Current - Receiving: 5.9mA
Current - Transmitting: 22mA
Antenna Type: Integrated, Chip
Modulation: GFSK
RF Family/Standard: Bluetooth
Serial Interfaces: GPIO, HCI, I2C, I2S, PCM, PWM, SPI, UART
Part Status: Active
DigiKey Programmable: Not Verified
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1000+13.93 EUR
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CYBT-253059-02 CYBT-253059-02 Infineon Technologies Infineon-CYBT-253059-02-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c81ae03fc0181d8239f953b1d Description: RF TXRX MOD BLUETOOTH CHIP SMD
Packaging: Cut Tape (CT)
Package / Case: 35-SMD Module
Sensitivity: -95dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 256kB Flash, 176kB RAM
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 2.6V ~ 3.3V
Power - Output: 10.5dBm
Data Rate: 3Mbps
Protocol: Bluetooth v5.0
Current - Receiving: 5.9mA
Current - Transmitting: 22mA
Antenna Type: Integrated, Chip
Modulation: GFSK
RF Family/Standard: Bluetooth
Serial Interfaces: GPIO, HCI, I2C, I2S, PCM, PWM, SPI, UART
Part Status: Active
DigiKey Programmable: Not Verified
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2+20.75 EUR
10+18.02 EUR
25+17.08 EUR
100+15.78 EUR
250+14.99 EUR
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IGLR60R190D1E8238XUMA1 IGLR60R190D1E8238XUMA1 Infineon Technologies infineon-iglr60r190d1-datasheet-en.pdf?fileId=8ac78c8c84a33f400184a4a5d240016b Description: GAN HV
Input Capacitance (Ciss) (Max) @ Vds: 157 pF @ 400 V
Drain to Source Voltage (Vdss): 600 V
Technology: GaNFET (Gallium Nitride)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C: 12.8A (Tc)
FET Type: N-Channel
Part Status: Discontinued at Digi-Key
Supplier Device Package: PG-TSON-8-6
Vgs(th) (Max) @ Id: 1.6V @ 960µA
Power Dissipation (Max): 55.5W (Tc)
Vgs (Max): -10V
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IGLR60R190D1XUMA1 IGLR60R190D1XUMA1 Infineon Technologies Infineon-IGLR60R190D1-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c84a33f400184a4a5d240016b Description: GAN HV
Current - Continuous Drain (Id) @ 25°C: 12.8A (Tc)
FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 157 pF @ 400 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): -10V
Part Status: Active
Supplier Device Package: PG-TSON-8-6
Vgs(th) (Max) @ Id: 1.6V @ 960µA
Power Dissipation (Max): 55.5W (Tc)
Produkt ist nicht verfügbar
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IDW40G65C5XKSA1 IDW40G65C5XKSA1 Infineon Technologies IDW40G65C5_Final_Datasheet_v_2_1.pdf?folderId=db3a304314dca38901151224afae0c96&fileId=db3a30433899edae0138a4c399d32237 Description: DIODE SIL CARB 650V 40A TO247-3
Current - Reverse Leakage @ Vr: 220 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 40 A
Voltage - DC Reverse (Vr) (Max): 650 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: PG-TO247-3
Current - Average Rectified (Io): 40A
Capacitance @ Vr, F: 1140pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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30+17.2 EUR
60+15.87 EUR
120+14.77 EUR
510+13.28 EUR
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28276189 C Infineon Technologies Description: IC
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28225511 A Infineon Technologies Description: IC
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28294110 A Infineon Technologies Description: IC
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BSP76E6327HUMA1 BSP76E6327HUMA1 Infineon Technologies Description: IC PWR SWTCH N-CHAN 1:1 SOT223-4
Packaging: Tape & Reel (TR)
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CYPD2703-09FNXIT CYPD2703-09FNXIT Infineon Technologies Infineon-EZ-PD_CMG1_Datasheet_USB-C_EMCA_Controller-AdditionalTechnicalInformation-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee4bb726be8&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-file Description: IC USB-C CONTROLLER 9CSP
DigiKey Programmable: Not Verified
Supplier Device Package: 9-WLCSP (1.38x1.35)
Applications: USB Type C
Voltage - Supply: 2.7V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Interface: I2C, USB
Mounting Type: Surface Mount
Package / Case: 9-UFBGA, WLCSP
Packaging: Tape & Reel (TR)
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CYPD2703-09FNXIT CYPD2703-09FNXIT Infineon Technologies Infineon-EZ-PD_CMG1_Datasheet_USB-C_EMCA_Controller-AdditionalTechnicalInformation-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee4bb726be8&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-file Description: IC USB-C CONTROLLER 9CSP
DigiKey Programmable: Not Verified
Supplier Device Package: 9-WLCSP (1.38x1.35)
Applications: USB Type C
Voltage - Supply: 2.7V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Interface: I2C, USB
Mounting Type: Surface Mount
Package / Case: 9-UFBGA, WLCSP
Packaging: Cut Tape (CT)
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S29JL064J70TFI003 S29JL064J70TFI003 Infineon Technologies Infineon-S29JL064J_64_Mb_(8M_x_8_Bit_4M_x_16_Bit)_3_V_Simultaneous_Read_Write_Flash-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6688c56c7&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integ Description: IC FLASH 64MBIT PARALLEL 48TSOP
DigiKey Programmable: Verified
Memory Organization: 8M x 8, 4M x 16
Access Time: 70 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 70ns
Supplier Device Package: 48-TSOP
Memory Format: FLASH
Technology: FLASH - NOR
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Packaging: Tape & Reel (TR)
Memory Size: 64Mbit
Mounting Type: Surface Mount
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S29JL064J70TFI003 S29JL064J70TFI003 Infineon Technologies Infineon-S29JL064J_64_Mb_(8M_x_8_Bit_4M_x_16_Bit)_3_V_Simultaneous_Read_Write_Flash-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6688c56c7&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integ Description: IC FLASH 64MBIT PARALLEL 48TSOP
DigiKey Programmable: Verified
Memory Organization: 8M x 8, 4M x 16
Access Time: 70 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 70ns
Supplier Device Package: 48-TSOP
Memory Format: FLASH
Technology: FLASH - NOR
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 64Mbit
Mounting Type: Surface Mount
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Packaging: Cut Tape (CT)
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TLE9255WLCXUMA1 TLE9255WLCXUMA1 Infineon Technologies Infineon-TLE9255W-DS-v01_01-EN.pdf?fileId=5546d4625bd71aa0015c10eaeaf93ee5 Description: IC TRANSCEIVER FULL 1/1 TSON-14
Qualification: AEC-Q100
Grade: Automotive
Part Status: Active
Duplex: Full
Supplier Device Package: PG-TSON-14-3
Protocol: CANbus
Data Rate: 5Mbps
Number of Drivers/Receivers: 1/1
Voltage - Supply: 4.75V ~ 5.25V
Operating Temperature: -40°C ~ 150°C (TJ)
Type: Transceiver
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 14-TDFN Exposed Pad
Packaging: Tape & Reel (TR)
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TLE9255WLCXUMA1 TLE9255WLCXUMA1 Infineon Technologies Infineon-TLE9255W-DS-v01_01-EN.pdf?fileId=5546d4625bd71aa0015c10eaeaf93ee5 Description: IC TRANSCEIVER FULL 1/1 TSON-14
Qualification: AEC-Q100
Grade: Automotive
Part Status: Active
Duplex: Full
Supplier Device Package: PG-TSON-14-3
Protocol: CANbus
Data Rate: 5Mbps
Number of Drivers/Receivers: 1/1
Voltage - Supply: 4.75V ~ 5.25V
Operating Temperature: -40°C ~ 150°C (TJ)
Type: Transceiver
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 14-TDFN Exposed Pad
Packaging: Cut Tape (CT)
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TLE9255WSKXUMA1 TLE9255WSKXUMA1 Infineon Technologies Infineon-TLE9255W-DS-v01_01-EN.pdf?fileId=5546d4625bd71aa0015c10eaeaf93ee5 Description: IC TRANSCEIVER FULL PGDSO14
Grade: Automotive
Part Status: Active
Duplex: Full
Supplier Device Package: PG-DSO-14
Protocol: CANbus
Data Rate: 1Mbps
Voltage - Supply: 4.75V ~ 5.25V
Operating Temperature: -40°C ~ 150°C
Type: Transceiver
Mounting Type: Surface Mount
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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TLE9255WSKXUMA1 TLE9255WSKXUMA1 Infineon Technologies Infineon-TLE9255W-DS-v01_01-EN.pdf?fileId=5546d4625bd71aa0015c10eaeaf93ee5 Description: IC TRANSCEIVER FULL PGDSO14
Grade: Automotive
Part Status: Active
Duplex: Full
Supplier Device Package: PG-DSO-14
Protocol: CANbus
Data Rate: 1Mbps
Voltage - Supply: 4.75V ~ 5.25V
Operating Temperature: -40°C ~ 150°C
Type: Transceiver
Mounting Type: Surface Mount
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
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BGF106CE6328XTSA1 BGF106CE6328XTSA1 Infineon Technologies BGF106C.pdf Description: FILTER RC 290MHZ ESD SMD
Applications: Data Lines for Mobile Devices
Filter Order: 2nd
Attenuation Value: 16.9dB @ 800MHz ~ 4GHz
Height: 0.026" (0.65mm)
Values: R = 47Ohms, 100Ohms, C = 16.5pF (Total)
Operating Temperature: -40°C ~ 85°C
Type: Low Pass
Mounting Type: Surface Mount
Size / Dimension: 0.047" L x 0.047" W (1.20mm x 1.20mm)
Package / Case: 8-UFBGA, WLCSP
Voltage - Rated: 5.5V
Packaging: Tape & Reel (TR)
Number of Channels: 3
ESD Protection: Yes
Resistance - Channel (Ohms): 47, 100
Center / Cutoff Frequency: 290MHz (Cutoff)
Technology: RC
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D2700U45X122XOSA1 D2700U45X122XOSA1 Infineon Technologies Infineon-D2700U45X122-DS-v01_01-EN.pdf?fileId=5546d4625f96303e015fa5df75323970 Description: DIODE GP 4.5KV 2900A D12026K-1
Current - Reverse Leakage @ Vr: 150 mA @ 4500 V
Voltage - DC Reverse (Vr) (Max): 4500 V
Operating Temperature - Junction: 140°C (Max)
Supplier Device Package: BG-D12026K-1
Current - Average Rectified (Io): 2900A
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: DO-200AE
Packaging: Tray
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IRLR4132TRPBF IRLR4132TRPBF Infineon Technologies fundamentals-of-power-semiconductors Description: MOSFET N-CH 30V 160A DPAK
Packaging: Tape & Reel (TR)
Part Status: Active
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IRLR4132TRPBF IRLR4132TRPBF Infineon Technologies fundamentals-of-power-semiconductors Description: MOSFET N-CH 30V 160A DPAK
Packaging: Cut Tape (CT)
Part Status: Active
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IPP026N04NF2SAKMA1 IPP026N04NF2SAKMA1 Infineon Technologies Infineon-IPP026N04NF2S-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c82ce566401833b43474c5666 Description: TRENCH PG-TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: PG-TO220-3-U05
Vgs(th) (Max) @ Id: 3.4V @ 81µA
Power Dissipation (Max): 3.8W (Ta), 150W (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 70A, 10V
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 121A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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IPP013N04NF2SAKMA1 IPP013N04NF2SAKMA1 Infineon Technologies Infineon-IPP013N04NF2S-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c82ce566401831736c4a75b41 Description: TRENCH PG-TO220-3
Part Status: Active
Packaging: Tube
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IPP014N06NF2SAKMA1 Infineon Technologies Description: TRENCH 40<-<100V
Input Capacitance (Ciss) (Max) @ Vds: 13800 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 305 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: PG-TO220-3-U05
Vgs(th) (Max) @ Id: 3.3V @ 246µA
Power Dissipation (Max): 3.8W (Ta), 300W (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 39A (Ta), 198A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tape & Reel (TR)
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IPF016N06NF2SATMA1 IPF016N06NF2SATMA1 Infineon Technologies Infineon-IPF016N06NF2S-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c850f4bee01851d1298c66aee Description: TRENCH 40<-<100V
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 223A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 100A, 10V
Power Dissipation (Max): 3.8W (Ta), 188W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 129µA
Supplier Device Package: PG-TO263-7-U02
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 162 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7300 pF @ 30 V
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IPF016N06NF2SATMA1 IPF016N06NF2SATMA1 Infineon Technologies Infineon-IPF016N06NF2S-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c850f4bee01851d1298c66aee Description: TRENCH 40<-<100V
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 223A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 100A, 10V
Power Dissipation (Max): 3.8W (Ta), 188W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 129µA
Supplier Device Package: PG-TO263-7-U02
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 162 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7300 pF @ 30 V
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S25HL512TDPMHB010 S25HL512TDPMHB010 Infineon Technologies infineon-512-mb-1-gb-semper-tm-flash-quad-spi-ja-datasheet-ja.pdf Description: IC FLASH 512MBIT SPI/QUAD 16SOIC
DigiKey Programmable: Not Verified
Memory Organization: 64M x 8
Memory Interface: SPI - Quad I/O, QPI
Part Status: Active
Supplier Device Package: 16-SOIC
Memory Format: FLASH
Clock Frequency: 133 MHz
Technology: FLASH - NOR
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 105°C (TA)
Memory Type: Non-Volatile
Memory Size: 512Mbit
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Packaging: Tray
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S25HL512TDPNHI010 S25HL512TDPNHI010 Infineon Technologies 002-12345_rev-AF.pdf Description: IC FLASH 512MBIT SPI/QUAD 8WSON
Packaging: Tray
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 8-WSON (6x8)
Part Status: Active
Memory Interface: SPI - Quad I/O
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
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S25HL512TDPNHB010 S25HL512TDPNHB010 Infineon Technologies infineon-s25hs256t-s25hs512t-s25hs01gt-s25hl256t-s25hl512t-s25hl01gt-256mb-512mb-1gb-semper-flash-with-quad-spi-datasheet-ja.pdf Description: IC FLASH 512MBIT SPI/QUAD 8WSON
Packaging: Tray
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 8-WSON (6x8)
Part Status: Active
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
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CY9BF116TPMC-GK7FKCGE1 Infineon Technologies Description: IC MCU 32BIT 512KB FLASH 176LQFP
DigiKey Programmable: Not Verified
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 64K x 8
Program Memory Size: 512KB (512K x 8)
Speed: 144MHz
Mounting Type: Surface Mount
Package / Case: 176-LQFP
Packaging: Tray
Number of I/O: 154
Part Status: Active
Supplier Device Package: 176-LQFP (24x24)
Peripherals: DMA, LVD, POR, PWM, WDT
Connectivity: CSIO, EBI/EMI, I2C, LINbus, UART/USART
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit
Data Converters: A/D 24x12b SAR
Core Processor: ARM® Cortex®-M3
Program Memory Type: FLASH
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CY91F469GBPB-GS-UJE1KR Infineon Technologies Description: IC MCU 32BT 2.0625MB FLSH 320BGA
Core Processor: FR60 RISC
Program Memory Type: FLASH
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 96K x 8
Program Memory Size: 2.0625MB (2.0625M x 8)
Speed: 100MHz
Mounting Type: Surface Mount
Package / Case: 320-BBGA
Packaging: Tray
DigiKey Programmable: Not Verified
Number of I/O: 205
Part Status: Obsolete
Supplier Device Package: 320-BGA (27x27)
Peripherals: DMA, LVD, PWM, WDT
Connectivity: CANbus, EBI/EMI, I²C, LINbus, UART/USART
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Core Size: 32-Bit
Data Converters: A/D 32x10b SAR
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IM241S6S1BAUMA1 IM241S6S1BAUMA1 Infineon Technologies Infineon-IM241_Series_2A-DataSheet-v01_06-EN.pdf?fileId=8ac78c8c81ae03fc0181f110b5c77f8e Description: CIPOS MICRO PG-DIP-23
Voltage: 600 V
Current: 2 A
Part Status: Active
Voltage - Isolation: 2000Vrms
Configuration: 3 Phase Inverter
Type: IGBT
Mounting Type: Surface Mount
Package / Case: 23-PowerSMD Module
Packaging: Tape & Reel (TR)
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IM241S6S1BAUMA1 IM241S6S1BAUMA1 Infineon Technologies Infineon-IM241_Series_2A-DataSheet-v01_06-EN.pdf?fileId=8ac78c8c81ae03fc0181f110b5c77f8e Description: CIPOS MICRO PG-DIP-23
Voltage: 600 V
Current: 2 A
Part Status: Active
Voltage - Isolation: 2000Vrms
Configuration: 3 Phase Inverter
Type: IGBT
Mounting Type: Surface Mount
Package / Case: 23-PowerSMD Module
Packaging: Cut Tape (CT)
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CY9AF141MABGL-GK9E1
CY9AF141MABGL-GK9E1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 96KB FLASH 96FBGA
DigiKey Programmable: Not Verified
Number of I/O: 66
Supplier Device Package: 96-FBGA (6x6)
Peripherals: LVD, POR, PWM, WDT
Connectivity: CSIO, EBI/EMI, I2C, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
Core Size: 32-Bit
Data Converters: A/D 17x12b SAR
Core Processor: ARM® Cortex®-M3
Program Memory Type: FLASH
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 16K x 8
Program Memory Size: 96KB (96K x 8)
Speed: 40MHz
Mounting Type: Surface Mount
Package / Case: 96-LFBGA
Packaging: Tray
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CY9AF141NABGL-GK9E1
Hersteller: Infineon Technologies
Description: MM MCU
Produkt ist nicht verfügbar
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CY9AF141NBBGL-GK9E1
CY9AF141NBBGL-GK9E1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 64KB FLASH 112BGA
Produkt ist nicht verfügbar
Mindestbestellmenge: 1980 Stücke
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FF600R17KE3B2S1NOSA1 i.MX%206%20Ultra%20Light.pdf
Hersteller: Infineon Technologies
Description: FF600R17 - INSULATED GATE BIPOLA
Packaging: Bulk
Part Status: Active
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FF600R12IE4VBOSA1 Infineon-FF600R12IE4V-DS-v02_00-en_de.pdf?fileId=5546d46145f1f3a40145f52ca8cd031e
Hersteller: Infineon Technologies
Description: IGBT MODULE 1200V 600A 3350W
Packaging: Bulk
Part Status: Active
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 600A
NTC Thermistor: Yes
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 600 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 3350 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 37000 pF @ 25 V
auf Bestellung 57 Stücke:
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1+864.3 EUR
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FF600R12IE4PNOSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 600A 3350W MOD
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 600A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 600 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 3350 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 37 nF @ 25 V
Produkt ist nicht verfügbar
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FF600R12KE3NOSA1 FF600R12KE3_Rev2.0_2002-07-30.pdf
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 850A 2800W MOD
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 600A
NTC Thermistor: No
Supplier Device Package: Module
Current - Collector (Ic) (Max): 850 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 2800 W
Current - Collector Cutoff (Max): 5 mA
auf Bestellung 28 Stücke:
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1+1333.97 EUR
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FF600R12IP4VBOSA1 Infineon-FF600R12IP4V-DS-v02_00-en_de.pdf?fileId=5546d46145f1f3a40145f5704bb30790
FF600R12IP4VBOSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 600A 3350W MOD
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 600A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 600 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 3350 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 37 nF @ 25 V
Produkt ist nicht verfügbar
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CY8C3666AXI-052 #!?fileId=8ac78c8c7d0d8da4017d0ec73d263e88
CY8C3666AXI-052
Hersteller: Infineon Technologies
Description: IC MCU 8BIT 64KB FLASH 100TQFP
DigiKey Programmable: Not Verified
Number of I/O: 62
Part Status: Active
Supplier Device Package: 100-TQFP (14x14)
Peripherals: CapSense, DMA, POR, PWM, WDT
Connectivity: EBI/EMI, I2C, LINbus, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Core Size: 8-Bit
Data Converters: A/D 16x12b; D/A 4x8b
Core Processor: 8051
EEPROM Size: 2K x 8
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 8K x 8
Program Memory Size: 64KB (64K x 8)
Speed: 67MHz
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Packaging: Tray
auf Bestellung 1204 Stücke:
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1+35.39 EUR
10+28.06 EUR
90+24.34 EUR
180+23.56 EUR
270+23.18 EUR
540+22.61 EUR
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CY8C3665AXI-198 #!?fileId=8ac78c8c7d0d8da4017d0ec73d263e88
CY8C3665AXI-198
Hersteller: Infineon Technologies
Description: IC MCU 8BIT 32KB FLASH 100TQFP
Produkt ist nicht verfügbar
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CY8C3665PVI-008 #!?fileId=8ac78c8c7d0d8da4017d0ec73d263e88
CY8C3665PVI-008
Hersteller: Infineon Technologies
Description: IC MCU 8BIT 32KB FLASH 48SSOP
auf Bestellung 589 Stücke:
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37+16.21 EUR
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CY8C3665PVI-008 #!?fileId=8ac78c8c7d0d8da4017d0ec73d263e88
CY8C3665PVI-008
Hersteller: Infineon Technologies
Description: IC MCU 8BIT 32KB FLASH 48SSOP
Produkt ist nicht verfügbar
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CY8C3665LTI-199 #!?fileId=8ac78c8c7d0d8da4017d0ec73d263e88
CY8C3665LTI-199
Hersteller: Infineon Technologies
Description: IC MCU 8BIT 32KB FLASH 68QFN
auf Bestellung 4953 Stücke:
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31+15.95 EUR
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CY8C3666AXI-202 #!?fileId=8ac78c8c7d0d8da4017d0ec73d263e88
CY8C3666AXI-202
Hersteller: Infineon Technologies
Description: IC MCU 8BIT 64KB FLASH 100TQFP
Produkt ist nicht verfügbar
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CY8C3665PVI-080 CY8C36_RevJ.pdf
CY8C3665PVI-080
Hersteller: Infineon Technologies
Description: IC MCU 8BIT 32KB FLASH 48SSOP
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30+20.29 EUR
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CY8C3646AXE-178
CY8C3646AXE-178
Hersteller: Infineon Technologies
Description: IC MCU 8BIT 64KB FLASH 100TQFP
Produkt ist nicht verfügbar
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S6AE103A0DGN1B200
S6AE103A0DGN1B200
Hersteller: Infineon Technologies
Description: IC PMIC ENERGY HARVESTING 24QFN
Mounting Type: Surface Mount
Package / Case: 24-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Supplier Device Package: 24-QFN (4x4)
Applications: Energy Harvesting
Voltage - Supply: 2V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
auf Bestellung 200 Stücke:
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200+12.19 EUR
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S6AE103A0DGN1B200
S6AE103A0DGN1B200
Hersteller: Infineon Technologies
Description: IC PMIC ENERGY HARVESTING 24QFN
Part Status: Obsolete
Supplier Device Package: 24-QFN (4x4)
Applications: Energy Harvesting
Voltage - Supply: 2V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 24-VFQFN Exposed Pad
Packaging: Cut Tape (CT)
auf Bestellung 381 Stücke:
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2+18.9 EUR
10+14.77 EUR
25+13.73 EUR
100+12.6 EUR
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CY15V108QN-50BKXI Infineon-CY15B108QN_CY15V108QN_8Mb_EXCELON_TM_LP_Ferroelectric_RAM_F-RAM-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c80f4d329018138198d3408be
CY15V108QN-50BKXI
Hersteller: Infineon Technologies
Description: IC FRAM 8MBIT SPI 50MHZ 24FBGA
Produkt ist nicht verfügbar
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IPTC039N15NM5ATMA1 infineon-iptc039n15nm5-datasheet-en.pdf
IPTC039N15NM5ATMA1
Hersteller: Infineon Technologies
Description: OPTIMOS 5 POWER MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 190A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 319W (Tc)
Vgs(th) (Max) @ Id: 4.6V @ 243µA
Supplier Device Package: PG-HDSOP-16-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7300 pF @ 75 V
auf Bestellung 1800 Stücke:
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1800+4.55 EUR
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IPTC039N15NM5ATMA1 infineon-iptc039n15nm5-datasheet-en.pdf
IPTC039N15NM5ATMA1
Hersteller: Infineon Technologies
Description: OPTIMOS 5 POWER MOSFET
Packaging: Cut Tape (CT)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 190A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 319W (Tc)
Vgs(th) (Max) @ Id: 4.6V @ 243µA
Supplier Device Package: PG-HDSOP-16-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7300 pF @ 75 V
auf Bestellung 1831 Stücke:
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AnzahlPrivatkunde
2+12.23 EUR
10+8.21 EUR
50+6.5 EUR
100+5.94 EUR
500+5.56 EUR
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IRF8915TRPBF irf8915pbf.pdf?fileId=5546d462533600a401535610fd2d1d91
IRF8915TRPBF
Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 20V 8.9A 8SO
Part Status: Obsolete
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 2.5V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 7.4nC @ 4.5V
Rds On (Max) @ Id, Vgs: 18.3mOhm @ 8.9A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 8.9A
Drain to Source Voltage (Vdss): 20V
Power - Max: 2W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Bulk
auf Bestellung 14211 Stücke:
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566+0.96 EUR
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D901S45T D901S35%E2%80%A645T.pdf
D901S45T
Hersteller: Infineon Technologies
Description: DIODE GEN PURP 4.5KV 1225A
Produkt ist nicht verfügbar
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IKW50N120CH7XKSA1 Infineon-IKW50N120CH7-DataSheet-v01_10-EN.pdf?fileId=8ac78c8c84a33f400184e2a1715c2da0
IKW50N120CH7XKSA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 1200V 86A TO247-3
Power - Max: 398 W
Current - Collector Pulsed (Icm): 200 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 86 A
Part Status: Active
Gate Charge: 375 nC
Switching Energy: 2.33mJ (on), 1.12mJ (off)
Supplier Device Package: PG-TO247-3-U06
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 50A
Reverse Recovery Time (trr): 116 ns
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Td (on/off) @ 25°C: 39ns/319ns
IGBT Type: Trench Field Stop
auf Bestellung 13 Stücke:
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AnzahlPrivatkunde
2+13.86 EUR
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CY62137FV30LL-45BVXIT Infineon-CY62137FV30_MoBL_2-Mbit_(128_K_16)_Static_RAM-DataSheet-v17_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe9762324f
CY62137FV30LL-45BVXIT
Hersteller: Infineon Technologies
Description: IC SRAM 2MBIT PARALLEL 48VFBGA
Packaging: Tape & Reel (TR)
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 2Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-VFBGA (6x8)
Part Status: Active
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 128K x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY62137FV30LL-45BVXIT Infineon-CY62137FV30_MoBL_2-Mbit_(128_K_16)_Static_RAM-DataSheet-v17_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe9762324f
CY62137FV30LL-45BVXIT
Hersteller: Infineon Technologies
Description: IC SRAM 2MBIT PARALLEL 48VFBGA
Packaging: Cut Tape (CT)
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 2Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-VFBGA (6x8)
Part Status: Active
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 128K x 16
DigiKey Programmable: Not Verified
auf Bestellung 1327 Stücke:
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AnzahlPrivatkunde
4+5.84 EUR
10+5.46 EUR
25+5.3 EUR
50+5.18 EUR
100+5.06 EUR
250+4.9 EUR
500+4.78 EUR
1000+4.66 EUR
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CYBT-253059-EVAL Infineon-CYBT-253059-EVAL_ARDUINO_MODULE_EVALUATION_BOARD-Quick-start-guide-UserManual-v01_00-EN.pdf?fileId=8ac78c8c7f2a768a017f643746326837
CYBT-253059-EVAL
Hersteller: Infineon Technologies
Description: AIROC CYBT-253059-EVAL KIT
Utilized IC / Part: CYBT-253059-02
Contents: Board(s), Accessories
Part Status: Active
Supplied Contents: Board(s), Accessories
Type: Transceiver; Bluetooth® 5.x (BLE)
Frequency: 2.4GHz
For Use With/Related Products: CYBT-253059-02
Packaging: Tray
auf Bestellung 2 Stücke:
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1+92.46 EUR
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CYBT-253059-02 Infineon-CYBT-253059-02-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c81ae03fc0181d8239f953b1d
CYBT-253059-02
Hersteller: Infineon Technologies
Description: RF TXRX MOD BLUETOOTH CHIP SMD
Packaging: Tape & Reel (TR)
Package / Case: 35-SMD Module
Sensitivity: -95dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 256kB Flash, 176kB RAM
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 2.6V ~ 3.3V
Power - Output: 10.5dBm
Data Rate: 3Mbps
Protocol: Bluetooth v5.0
Current - Receiving: 5.9mA
Current - Transmitting: 22mA
Antenna Type: Integrated, Chip
Modulation: GFSK
RF Family/Standard: Bluetooth
Serial Interfaces: GPIO, HCI, I2C, I2S, PCM, PWM, SPI, UART
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 1000 Stücke:
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AnzahlPrivatkunde
500+14.45 EUR
1000+13.93 EUR
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CYBT-253059-02 Infineon-CYBT-253059-02-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c81ae03fc0181d8239f953b1d
CYBT-253059-02
Hersteller: Infineon Technologies
Description: RF TXRX MOD BLUETOOTH CHIP SMD
Packaging: Cut Tape (CT)
Package / Case: 35-SMD Module
Sensitivity: -95dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 256kB Flash, 176kB RAM
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 2.6V ~ 3.3V
Power - Output: 10.5dBm
Data Rate: 3Mbps
Protocol: Bluetooth v5.0
Current - Receiving: 5.9mA
Current - Transmitting: 22mA
Antenna Type: Integrated, Chip
Modulation: GFSK
RF Family/Standard: Bluetooth
Serial Interfaces: GPIO, HCI, I2C, I2S, PCM, PWM, SPI, UART
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+20.75 EUR
10+18.02 EUR
25+17.08 EUR
100+15.78 EUR
250+14.99 EUR
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IGLR60R190D1E8238XUMA1 infineon-iglr60r190d1-datasheet-en.pdf?fileId=8ac78c8c84a33f400184a4a5d240016b
IGLR60R190D1E8238XUMA1
Hersteller: Infineon Technologies
Description: GAN HV
Input Capacitance (Ciss) (Max) @ Vds: 157 pF @ 400 V
Drain to Source Voltage (Vdss): 600 V
Technology: GaNFET (Gallium Nitride)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C: 12.8A (Tc)
FET Type: N-Channel
Part Status: Discontinued at Digi-Key
Supplier Device Package: PG-TSON-8-6
Vgs(th) (Max) @ Id: 1.6V @ 960µA
Power Dissipation (Max): 55.5W (Tc)
Vgs (Max): -10V
Produkt ist nicht verfügbar
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IGLR60R190D1XUMA1 Infineon-IGLR60R190D1-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c84a33f400184a4a5d240016b
IGLR60R190D1XUMA1
Hersteller: Infineon Technologies
Description: GAN HV
Current - Continuous Drain (Id) @ 25°C: 12.8A (Tc)
FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 157 pF @ 400 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): -10V
Part Status: Active
Supplier Device Package: PG-TSON-8-6
Vgs(th) (Max) @ Id: 1.6V @ 960µA
Power Dissipation (Max): 55.5W (Tc)
Produkt ist nicht verfügbar
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IDW40G65C5XKSA1 IDW40G65C5_Final_Datasheet_v_2_1.pdf?folderId=db3a304314dca38901151224afae0c96&fileId=db3a30433899edae0138a4c399d32237
IDW40G65C5XKSA1
Hersteller: Infineon Technologies
Description: DIODE SIL CARB 650V 40A TO247-3
Current - Reverse Leakage @ Vr: 220 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 40 A
Voltage - DC Reverse (Vr) (Max): 650 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: PG-TO247-3
Current - Average Rectified (Io): 40A
Capacitance @ Vr, F: 1140pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
auf Bestellung 1020 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+28.27 EUR
30+17.2 EUR
60+15.87 EUR
120+14.77 EUR
510+13.28 EUR
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28276189 C
Hersteller: Infineon Technologies
Description: IC
Produkt ist nicht verfügbar
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28225511 A
Hersteller: Infineon Technologies
Description: IC
Produkt ist nicht verfügbar
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28294110 A
Hersteller: Infineon Technologies
Description: IC
Produkt ist nicht verfügbar
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BSP76E6327HUMA1
BSP76E6327HUMA1
Hersteller: Infineon Technologies
Description: IC PWR SWTCH N-CHAN 1:1 SOT223-4
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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CYPD2703-09FNXIT Infineon-EZ-PD_CMG1_Datasheet_USB-C_EMCA_Controller-AdditionalTechnicalInformation-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee4bb726be8&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-file
CYPD2703-09FNXIT
Hersteller: Infineon Technologies
Description: IC USB-C CONTROLLER 9CSP
DigiKey Programmable: Not Verified
Supplier Device Package: 9-WLCSP (1.38x1.35)
Applications: USB Type C
Voltage - Supply: 2.7V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Interface: I2C, USB
Mounting Type: Surface Mount
Package / Case: 9-UFBGA, WLCSP
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke:
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3000+1.81 EUR
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CYPD2703-09FNXIT Infineon-EZ-PD_CMG1_Datasheet_USB-C_EMCA_Controller-AdditionalTechnicalInformation-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee4bb726be8&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-file
CYPD2703-09FNXIT
Hersteller: Infineon Technologies
Description: IC USB-C CONTROLLER 9CSP
DigiKey Programmable: Not Verified
Supplier Device Package: 9-WLCSP (1.38x1.35)
Applications: USB Type C
Voltage - Supply: 2.7V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Interface: I2C, USB
Mounting Type: Surface Mount
Package / Case: 9-UFBGA, WLCSP
Packaging: Cut Tape (CT)
auf Bestellung 3172 Stücke:
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6+3.62 EUR
10+2.65 EUR
25+2.42 EUR
100+2.15 EUR
250+2.02 EUR
500+1.94 EUR
1000+1.88 EUR
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S29JL064J70TFI003 Infineon-S29JL064J_64_Mb_(8M_x_8_Bit_4M_x_16_Bit)_3_V_Simultaneous_Read_Write_Flash-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6688c56c7&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integ
S29JL064J70TFI003
Hersteller: Infineon Technologies
Description: IC FLASH 64MBIT PARALLEL 48TSOP
DigiKey Programmable: Verified
Memory Organization: 8M x 8, 4M x 16
Access Time: 70 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 70ns
Supplier Device Package: 48-TSOP
Memory Format: FLASH
Technology: FLASH - NOR
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Packaging: Tape & Reel (TR)
Memory Size: 64Mbit
Mounting Type: Surface Mount
Produkt ist nicht verfügbar
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S29JL064J70TFI003 Infineon-S29JL064J_64_Mb_(8M_x_8_Bit_4M_x_16_Bit)_3_V_Simultaneous_Read_Write_Flash-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6688c56c7&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integ
S29JL064J70TFI003
Hersteller: Infineon Technologies
Description: IC FLASH 64MBIT PARALLEL 48TSOP
DigiKey Programmable: Verified
Memory Organization: 8M x 8, 4M x 16
Access Time: 70 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 70ns
Supplier Device Package: 48-TSOP
Memory Format: FLASH
Technology: FLASH - NOR
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 64Mbit
Mounting Type: Surface Mount
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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TLE9255WLCXUMA1 Infineon-TLE9255W-DS-v01_01-EN.pdf?fileId=5546d4625bd71aa0015c10eaeaf93ee5
TLE9255WLCXUMA1
Hersteller: Infineon Technologies
Description: IC TRANSCEIVER FULL 1/1 TSON-14
Qualification: AEC-Q100
Grade: Automotive
Part Status: Active
Duplex: Full
Supplier Device Package: PG-TSON-14-3
Protocol: CANbus
Data Rate: 5Mbps
Number of Drivers/Receivers: 1/1
Voltage - Supply: 4.75V ~ 5.25V
Operating Temperature: -40°C ~ 150°C (TJ)
Type: Transceiver
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 14-TDFN Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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TLE9255WLCXUMA1 Infineon-TLE9255W-DS-v01_01-EN.pdf?fileId=5546d4625bd71aa0015c10eaeaf93ee5
TLE9255WLCXUMA1
Hersteller: Infineon Technologies
Description: IC TRANSCEIVER FULL 1/1 TSON-14
Qualification: AEC-Q100
Grade: Automotive
Part Status: Active
Duplex: Full
Supplier Device Package: PG-TSON-14-3
Protocol: CANbus
Data Rate: 5Mbps
Number of Drivers/Receivers: 1/1
Voltage - Supply: 4.75V ~ 5.25V
Operating Temperature: -40°C ~ 150°C (TJ)
Type: Transceiver
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 14-TDFN Exposed Pad
Packaging: Cut Tape (CT)
auf Bestellung 4636 Stücke:
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4+5.7 EUR
10+4.26 EUR
25+3.9 EUR
100+3.5 EUR
250+3.32 EUR
500+3.2 EUR
1000+3.11 EUR
2500+3.01 EUR
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TLE9255WSKXUMA1 Infineon-TLE9255W-DS-v01_01-EN.pdf?fileId=5546d4625bd71aa0015c10eaeaf93ee5
TLE9255WSKXUMA1
Hersteller: Infineon Technologies
Description: IC TRANSCEIVER FULL PGDSO14
Grade: Automotive
Part Status: Active
Duplex: Full
Supplier Device Package: PG-DSO-14
Protocol: CANbus
Data Rate: 1Mbps
Voltage - Supply: 4.75V ~ 5.25V
Operating Temperature: -40°C ~ 150°C
Type: Transceiver
Mounting Type: Surface Mount
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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TLE9255WSKXUMA1 Infineon-TLE9255W-DS-v01_01-EN.pdf?fileId=5546d4625bd71aa0015c10eaeaf93ee5
TLE9255WSKXUMA1
Hersteller: Infineon Technologies
Description: IC TRANSCEIVER FULL PGDSO14
Grade: Automotive
Part Status: Active
Duplex: Full
Supplier Device Package: PG-DSO-14
Protocol: CANbus
Data Rate: 1Mbps
Voltage - Supply: 4.75V ~ 5.25V
Operating Temperature: -40°C ~ 150°C
Type: Transceiver
Mounting Type: Surface Mount
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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BGF106CE6328XTSA1 BGF106C.pdf
BGF106CE6328XTSA1
Hersteller: Infineon Technologies
Description: FILTER RC 290MHZ ESD SMD
Applications: Data Lines for Mobile Devices
Filter Order: 2nd
Attenuation Value: 16.9dB @ 800MHz ~ 4GHz
Height: 0.026" (0.65mm)
Values: R = 47Ohms, 100Ohms, C = 16.5pF (Total)
Operating Temperature: -40°C ~ 85°C
Type: Low Pass
Mounting Type: Surface Mount
Size / Dimension: 0.047" L x 0.047" W (1.20mm x 1.20mm)
Package / Case: 8-UFBGA, WLCSP
Voltage - Rated: 5.5V
Packaging: Tape & Reel (TR)
Number of Channels: 3
ESD Protection: Yes
Resistance - Channel (Ohms): 47, 100
Center / Cutoff Frequency: 290MHz (Cutoff)
Technology: RC
Produkt ist nicht verfügbar
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D2700U45X122XOSA1 Infineon-D2700U45X122-DS-v01_01-EN.pdf?fileId=5546d4625f96303e015fa5df75323970
D2700U45X122XOSA1
Hersteller: Infineon Technologies
Description: DIODE GP 4.5KV 2900A D12026K-1
Current - Reverse Leakage @ Vr: 150 mA @ 4500 V
Voltage - DC Reverse (Vr) (Max): 4500 V
Operating Temperature - Junction: 140°C (Max)
Supplier Device Package: BG-D12026K-1
Current - Average Rectified (Io): 2900A
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: DO-200AE
Packaging: Tray
auf Bestellung 2 Stücke:
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1+3697.56 EUR
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IRLR4132TRPBF fundamentals-of-power-semiconductors
IRLR4132TRPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 160A DPAK
Packaging: Tape & Reel (TR)
Part Status: Active
Produkt ist nicht verfügbar
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IRLR4132TRPBF fundamentals-of-power-semiconductors
IRLR4132TRPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 160A DPAK
Packaging: Cut Tape (CT)
Part Status: Active
Produkt ist nicht verfügbar
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IPP026N04NF2SAKMA1 Infineon-IPP026N04NF2S-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c82ce566401833b43474c5666
IPP026N04NF2SAKMA1
Hersteller: Infineon Technologies
Description: TRENCH PG-TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: PG-TO220-3-U05
Vgs(th) (Max) @ Id: 3.4V @ 81µA
Power Dissipation (Max): 3.8W (Ta), 150W (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 70A, 10V
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 121A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
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IPP013N04NF2SAKMA1 Infineon-IPP013N04NF2S-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c82ce566401831736c4a75b41
IPP013N04NF2SAKMA1
Hersteller: Infineon Technologies
Description: TRENCH PG-TO220-3
Part Status: Active
Packaging: Tube
auf Bestellung 462 Stücke:
Lieferzeit 10-14 Tag (e)
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4+5.45 EUR
50+2.07 EUR
100+1.99 EUR
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IPP014N06NF2SAKMA1
Hersteller: Infineon Technologies
Description: TRENCH 40<-<100V
Input Capacitance (Ciss) (Max) @ Vds: 13800 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 305 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: PG-TO220-3-U05
Vgs(th) (Max) @ Id: 3.3V @ 246µA
Power Dissipation (Max): 3.8W (Ta), 300W (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 39A (Ta), 198A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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IPF016N06NF2SATMA1 Infineon-IPF016N06NF2S-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c850f4bee01851d1298c66aee
IPF016N06NF2SATMA1
Hersteller: Infineon Technologies
Description: TRENCH 40<-<100V
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 223A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 100A, 10V
Power Dissipation (Max): 3.8W (Ta), 188W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 129µA
Supplier Device Package: PG-TO263-7-U02
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 162 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7300 pF @ 30 V
auf Bestellung 800 Stücke:
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AnzahlPrivatkunde
800+3.82 EUR
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IPF016N06NF2SATMA1 Infineon-IPF016N06NF2S-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c850f4bee01851d1298c66aee
IPF016N06NF2SATMA1
Hersteller: Infineon Technologies
Description: TRENCH 40<-<100V
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 223A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 100A, 10V
Power Dissipation (Max): 3.8W (Ta), 188W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 129µA
Supplier Device Package: PG-TO263-7-U02
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 162 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7300 pF @ 30 V
auf Bestellung 946 Stücke:
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3+10.14 EUR
10+6.74 EUR
50+5.28 EUR
100+4.82 EUR
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S25HL512TDPMHB010 infineon-512-mb-1-gb-semper-tm-flash-quad-spi-ja-datasheet-ja.pdf
S25HL512TDPMHB010
Hersteller: Infineon Technologies
Description: IC FLASH 512MBIT SPI/QUAD 16SOIC
DigiKey Programmable: Not Verified
Memory Organization: 64M x 8
Memory Interface: SPI - Quad I/O, QPI
Part Status: Active
Supplier Device Package: 16-SOIC
Memory Format: FLASH
Clock Frequency: 133 MHz
Technology: FLASH - NOR
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 105°C (TA)
Memory Type: Non-Volatile
Memory Size: 512Mbit
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Packaging: Tray
auf Bestellung 336 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+20.81 EUR
10+19.34 EUR
25+18.74 EUR
50+18.29 EUR
240+17.29 EUR
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S25HL512TDPNHI010 002-12345_rev-AF.pdf
S25HL512TDPNHI010
Hersteller: Infineon Technologies
Description: IC FLASH 512MBIT SPI/QUAD 8WSON
Packaging: Tray
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 8-WSON (6x8)
Part Status: Active
Memory Interface: SPI - Quad I/O
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
auf Bestellung 666 Stücke:
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2+17.67 EUR
10+16.43 EUR
25+15.93 EUR
50+15.55 EUR
100+15.17 EUR
338+14.52 EUR
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S25HL512TDPNHB010 infineon-s25hs256t-s25hs512t-s25hs01gt-s25hl256t-s25hl512t-s25hl01gt-256mb-512mb-1gb-semper-flash-with-quad-spi-datasheet-ja.pdf
S25HL512TDPNHB010
Hersteller: Infineon Technologies
Description: IC FLASH 512MBIT SPI/QUAD 8WSON
Packaging: Tray
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 8-WSON (6x8)
Part Status: Active
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
auf Bestellung 338 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+20.81 EUR
10+19.34 EUR
25+18.74 EUR
50+18.29 EUR
100+17.85 EUR
338+17.08 EUR
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CY9BF116TPMC-GK7FKCGE1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 512KB FLASH 176LQFP
DigiKey Programmable: Not Verified
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 64K x 8
Program Memory Size: 512KB (512K x 8)
Speed: 144MHz
Mounting Type: Surface Mount
Package / Case: 176-LQFP
Packaging: Tray
Number of I/O: 154
Part Status: Active
Supplier Device Package: 176-LQFP (24x24)
Peripherals: DMA, LVD, POR, PWM, WDT
Connectivity: CSIO, EBI/EMI, I2C, LINbus, UART/USART
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit
Data Converters: A/D 24x12b SAR
Core Processor: ARM® Cortex®-M3
Program Memory Type: FLASH
Produkt ist nicht verfügbar
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CY91F469GBPB-GS-UJE1KR
Hersteller: Infineon Technologies
Description: IC MCU 32BT 2.0625MB FLSH 320BGA
Core Processor: FR60 RISC
Program Memory Type: FLASH
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 96K x 8
Program Memory Size: 2.0625MB (2.0625M x 8)
Speed: 100MHz
Mounting Type: Surface Mount
Package / Case: 320-BBGA
Packaging: Tray
DigiKey Programmable: Not Verified
Number of I/O: 205
Part Status: Obsolete
Supplier Device Package: 320-BGA (27x27)
Peripherals: DMA, LVD, PWM, WDT
Connectivity: CANbus, EBI/EMI, I²C, LINbus, UART/USART
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Core Size: 32-Bit
Data Converters: A/D 32x10b SAR
Produkt ist nicht verfügbar
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IM241S6S1BAUMA1 Infineon-IM241_Series_2A-DataSheet-v01_06-EN.pdf?fileId=8ac78c8c81ae03fc0181f110b5c77f8e
IM241S6S1BAUMA1
Hersteller: Infineon Technologies
Description: CIPOS MICRO PG-DIP-23
Voltage: 600 V
Current: 2 A
Part Status: Active
Voltage - Isolation: 2000Vrms
Configuration: 3 Phase Inverter
Type: IGBT
Mounting Type: Surface Mount
Package / Case: 23-PowerSMD Module
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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IM241S6S1BAUMA1 Infineon-IM241_Series_2A-DataSheet-v01_06-EN.pdf?fileId=8ac78c8c81ae03fc0181f110b5c77f8e
IM241S6S1BAUMA1
Hersteller: Infineon Technologies
Description: CIPOS MICRO PG-DIP-23
Voltage: 600 V
Current: 2 A
Part Status: Active
Voltage - Isolation: 2000Vrms
Configuration: 3 Phase Inverter
Type: IGBT
Mounting Type: Surface Mount
Package / Case: 23-PowerSMD Module
Packaging: Cut Tape (CT)
auf Bestellung 13 Stücke:
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AnzahlPrivatkunde
2+14.55 EUR
10+11.25 EUR
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