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IPB015N06NF2SATMA1 IPB015N06NF2SATMA1 Infineon Technologies Infineon-IPB015N06NF2S-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c850f4bee01851c67bcc63b27 Description: TRENCH 40<-<100V
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Ta), 195A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 100A, 10V
Power Dissipation (Max): 3.8W (Ta), 250W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 186µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 233 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10500 pF @ 30 V
auf Bestellung 407 Stücke:
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5+4.01 EUR
10+2.95 EUR
100+2.11 EUR
Mindestbestellmenge: 5
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S29GL256S90TFA010 S29GL256S90TFA010 Infineon Technologies Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai Description: IC FLASH 256MBIT PARALLEL 56TSOP
Packaging: Tray
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 16M x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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S29GL256S90GHI010 S29GL256S90GHI010 Infineon Technologies Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai Description: IC FLASH 256MBIT PARALLEL 56FBGA
auf Bestellung 333 Stücke:
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97+5.16 EUR
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S29GL256S90GHI010 S29GL256S90GHI010 Infineon Technologies Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai Description: IC FLASH 256MBIT PARALLEL 56FBGA
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S29GL256S90TAA023 S29GL256S90TAA023 Infineon Technologies Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai Description: IC FLASH 256MBIT PARALLEL 56TSOP
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S29GL256S90FHA020 S29GL256S90FHA020 Infineon Technologies Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai Description: IC FLASH 256MBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 16M x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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S29GL256S90FHA023 S29GL256S90FHA023 Infineon Technologies Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai Description: IC FLASH 256MBIT PARALLEL 64FBGA
Packaging: Tape & Reel (TR)
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Part Status: Active
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 16M x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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TLE92613BQXXUMA2 TLE92613BQXXUMA2 Infineon Technologies Infineon-TLE9261-3BQX-DataSheet-v01_20-EN.pdf?fileId=5546d462602a9dc801609757e65c3921 Description: OPTIREG SYST BASIS CHIPS
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 3V ~ 28V
Applications: System Basis Chip
Current - Supply: 3.5mA
Supplier Device Package: PG-VQFN-48-79
Produkt ist nicht verfügbar
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FS900R08A2P2B32BOSA1 FS900R08A2P2B32BOSA1 Infineon Technologies Infineon-FS900R08A2P2_B32-DS-v03_00-EN.pdf?fileId=5546d46262b31d2e0163019394f733b8 Description: IGBT MODULE PACK2 DRV HYBRID2-1
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.25V @ 15V, 550A
NTC Thermistor: Yes
Supplier Device Package: AG-HYBRID2-1
Part Status: Obsolete
Current - Collector (Ic) (Max): 550 A
Voltage - Collector Emitter Breakdown (Max): 750 V
Power - Max: 1546 W
Current - Collector Cutoff (Max): 500 µA
Input Capacitance (Cies) @ Vce: 105 nF @ 25 V
auf Bestellung 120 Stücke:
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FS900R08A2P2B32BOSA1 FS900R08A2P2B32BOSA1 Infineon Technologies Infineon-FS900R08A2P2_B32-DS-v03_00-EN.pdf?fileId=5546d46262b31d2e0163019394f733b8 Description: IGBT MODULE PACK2 DRV HYBRID2-1
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.25V @ 15V, 550A
NTC Thermistor: Yes
Supplier Device Package: AG-HYBRID2-1
Part Status: Obsolete
Current - Collector (Ic) (Max): 550 A
Voltage - Collector Emitter Breakdown (Max): 750 V
Power - Max: 1546 W
Current - Collector Cutoff (Max): 500 µA
Input Capacitance (Cies) @ Vce: 105 nF @ 25 V
Produkt ist nicht verfügbar
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IFX25001MEV25 IFX25001MEV25 Infineon Technologies INFNS14793-1.pdf?t.download=true&u=5oefqw Description: IC REG LINEAR FIXED LDO REG
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 400mA
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 220 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-SOT223-4-21
Voltage - Output (Min/Fixed): 2.5V
PSRR: 60dB (100Hz)
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 30 mA
auf Bestellung 8694 Stücke:
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1039+0.47 EUR
Mindestbestellmenge: 1039
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IPB014N04NF2SATMA1 IPB014N04NF2SATMA1 Infineon Technologies Infineon-IPB014N04NF2S-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c850f4bee01851d12b8ec6af7 Description: TRENCH <= 40V
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Ta), 191A (Tc)
Rds On (Max) @ Id, Vgs: 1.45mOhm @ 100A, 10V
Power Dissipation (Max): 3.8W (Ta), 188W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 126µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 159 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7500 pF @ 20 V
Produkt ist nicht verfügbar
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IPB014N04NF2SATMA1 IPB014N04NF2SATMA1 Infineon Technologies Infineon-IPB014N04NF2S-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c850f4bee01851d12b8ec6af7 Description: TRENCH <= 40V
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Ta), 191A (Tc)
Rds On (Max) @ Id, Vgs: 1.45mOhm @ 100A, 10V
Power Dissipation (Max): 3.8W (Ta), 188W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 126µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 159 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7500 pF @ 20 V
auf Bestellung 348 Stücke:
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5+3.77 EUR
10+2.58 EUR
100+1.76 EUR
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MB96F338USAPMC-GS-N2E2 MB96F338USAPMC-GS-N2E2 Infineon Technologies download Description: IC MCU 16BIT 544KB FLASH 144LQFP
Packaging: Tray
Package / Case: 144-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 544KB (544K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: F²MC-16FX
Data Converters: A/D 36x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I2C, LINbus, SCI, UART/USART, USB
Peripherals: DMA, LVD, LVR, POR, PWM, WDT
Supplier Device Package: 144-LQFP (20x20)
Part Status: Obsolete
Number of I/O: 120
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CYBLE-343072-02 CYBLE-343072-02 Infineon Technologies Infineon-CYBLE-343072-02_CYBLE-333073-02_CYBLE-333074-02_AIROC_Bluetooth_LE_module-AdditionalTechnicalInformation-v02_00-EN.pdf?fileId=8ac78c8c7d718a49017d9a4f3ee63c2d Description: RF TXRX MOD BT TH SMD
Packaging: Tape & Reel (TR)
Package / Case: 43-SMD Module
Sensitivity: -94.5dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 512kB Flash, 384kB RAM
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 2.5V ~ 3.6V
Power - Output: 12dBm
Data Rate: 6Mbps
Protocol: Bluetooth v5.2
Current - Receiving: 8mA
Current - Transmitting: 18mA
Antenna Type: Integrated, Trace
Utilized IC / Part: CYW20835
Modulation: GFSK
RF Family/Standard: Bluetooth
Serial Interfaces: ADC, I2C, PWM, SPI, UART
Part Status: Active
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CYBLE-343072-02 CYBLE-343072-02 Infineon Technologies Infineon-CYBLE-343072-02_CYBLE-333073-02_CYBLE-333074-02_AIROC_Bluetooth_LE_module-AdditionalTechnicalInformation-v02_00-EN.pdf?fileId=8ac78c8c7d718a49017d9a4f3ee63c2d Description: RF TXRX MOD BT TH SMD
Packaging: Cut Tape (CT)
Package / Case: 43-SMD Module
Sensitivity: -94.5dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 512kB Flash, 384kB RAM
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 2.5V ~ 3.6V
Power - Output: 12dBm
Data Rate: 6Mbps
Protocol: Bluetooth v5.2
Current - Receiving: 8mA
Current - Transmitting: 18mA
Antenna Type: Integrated, Trace
Utilized IC / Part: CYW20835
Modulation: GFSK
RF Family/Standard: Bluetooth
Serial Interfaces: ADC, I2C, PWM, SPI, UART
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 830 Stücke:
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2+12.78 EUR
10+9.88 EUR
25+9.00 EUR
100+7.92 EUR
250+7.34 EUR
Mindestbestellmenge: 2
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S80KS2562GABHI020 S80KS2562GABHI020 Infineon Technologies Infineon-S80KS2562_1.8_V_256-Mb_HyperBus_Interface_HyperRAM_(Self-Refresh_DRAM)-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7dc4255f017dd82db3d308ae Description: IC PSRAM 256MBIT HYPERBUS 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: PSRAM (Pseudo SRAM)
Clock Frequency: 200 MHz
Memory Format: PSRAM
Supplier Device Package: 24-FBGA (6x8)
Part Status: Active
Write Cycle Time - Word, Page: 35ns
Memory Interface: HyperBus
Access Time: 35 ns
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
auf Bestellung 488 Stücke:
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2+9.54 EUR
10+8.88 EUR
25+8.61 EUR
50+8.41 EUR
100+8.21 EUR
338+7.86 EUR
Mindestbestellmenge: 2
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S80KS2563GABHB020 S80KS2563GABHB020 Infineon Technologies Infineon-S80KS2563_1.8_V_256-Mb_Octal_xSPI_Interface_HyperRAM_(Self-Refresh_DRAM)-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7dc4255f017dd7ad739905af Description: IC PSRAM 256MBIT SPI/OCTL 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: PSRAM (Pseudo SRAM)
Clock Frequency: 200 MHz
Memory Format: PSRAM
Supplier Device Package: 24-FBGA (6x8)
Part Status: Active
Write Cycle Time - Word, Page: 35ns
Memory Interface: SPI - Octal I/O
Access Time: 35 ns
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
auf Bestellung 636 Stücke:
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2+9.72 EUR
10+9.03 EUR
25+8.75 EUR
50+8.55 EUR
100+8.34 EUR
338+7.98 EUR
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S80KS2562GABHA020 S80KS2562GABHA020 Infineon Technologies Infineon-S80KS2562_1.8_V_256-Mb_HyperBus_Interface_HyperRAM_(Self-Refresh_DRAM)-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7dc4255f017dd82db3d308ae Description: IC PSRAM 256MBIT HYPERBUS 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: PSRAM (Pseudo SRAM)
Clock Frequency: 200 MHz
Memory Format: PSRAM
Supplier Device Package: 24-FBGA (6x8)
Part Status: Active
Write Cycle Time - Word, Page: 35ns
Memory Interface: HyperBus
Access Time: 35 ns
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
auf Bestellung 670 Stücke:
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2+9.03 EUR
10+8.39 EUR
25+8.13 EUR
50+7.94 EUR
100+7.75 EUR
338+7.42 EUR
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S80KS2562GABHV020 S80KS2562GABHV020 Infineon Technologies Infineon-S80KS2562_1.8_V_256-Mb_HyperBus_Interface_HyperRAM_(Self-Refresh_DRAM)-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7dc4255f017dd82db3d308ae Description: IC PSRAM 256MBIT HYPERBUS 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: PSRAM (Pseudo SRAM)
Clock Frequency: 200 MHz
Memory Format: PSRAM
Supplier Device Package: 24-FBGA (6x8)
Part Status: Active
Write Cycle Time - Word, Page: 35ns
Memory Interface: HyperBus
Access Time: 35 ns
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
auf Bestellung 308 Stücke:
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2+10.28 EUR
10+9.55 EUR
25+9.26 EUR
50+9.04 EUR
100+8.82 EUR
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S80KS2563GABHV020 S80KS2563GABHV020 Infineon Technologies Infineon-S80KS2563_1.8_V_256-Mb_Octal_xSPI_Interface_HyperRAM_(Self-Refresh_DRAM)-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7dc4255f017dd7ad739905af Description: IC PSRAM 256MBIT SPI/OCTL 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: PSRAM (Pseudo SRAM)
Clock Frequency: 200 MHz
Memory Format: PSRAM
Supplier Device Package: 24-FBGA (6x8)
Part Status: Active
Write Cycle Time - Word, Page: 35ns
Memory Interface: SPI - Octal I/O
Access Time: 35 ns
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
auf Bestellung 245 Stücke:
Lieferzeit 10-14 Tag (e)
2+10.28 EUR
10+9.55 EUR
25+9.26 EUR
50+9.04 EUR
100+8.82 EUR
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S80KS2563GABHM020 S80KS2563GABHM020 Infineon Technologies Infineon-S80KS2563_1.8_V_256-Mb_Octal_xSPI_Interface_HyperRAM_(Self-Refresh_DRAM)-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7dc4255f017dd7ad739905af Description: IC PSRAM 256MBIT SPI/OCTL 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: PSRAM (Pseudo SRAM)
Clock Frequency: 200 MHz
Memory Format: PSRAM
Supplier Device Package: 24-FBGA (6x8)
Part Status: Active
Write Cycle Time - Word, Page: 35ns
Memory Interface: SPI - Octal I/O
Access Time: 35 ns
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
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2+10.31 EUR
10+9.60 EUR
25+9.30 EUR
50+9.08 EUR
100+8.86 EUR
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676+8.27 EUR
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S80KS2562GABHB020 S80KS2562GABHB020 Infineon Technologies download Description: IC PSRAM 256MBIT HYPERBUS 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: PSRAM (Pseudo SRAM)
Clock Frequency: 200 MHz
Memory Format: PSRAM
Supplier Device Package: 24-FBGA (6x8)
Part Status: Active
Write Cycle Time - Word, Page: 35ns
Memory Interface: HyperBus
Access Time: 35 ns
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
auf Bestellung 676 Stücke:
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2+9.72 EUR
10+9.03 EUR
25+8.75 EUR
50+8.55 EUR
100+8.34 EUR
338+7.98 EUR
676+7.78 EUR
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S80KS2562GABHM020 S80KS2562GABHM020 Infineon Technologies Infineon-S80KS2562_1.8_V_256-Mb_HyperBus_Interface_HyperRAM_(Self-Refresh_DRAM)-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7dc4255f017dd82db3d308ae Description: IC PSRAM 256MBIT HYPERBUS 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: PSRAM (Pseudo SRAM)
Clock Frequency: 200 MHz
Memory Format: PSRAM
Supplier Device Package: 24-FBGA (6x8)
Part Status: Active
Write Cycle Time - Word, Page: 35ns
Memory Interface: HyperBus
Access Time: 35 ns
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
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S80KS2563GABHA020 S80KS2563GABHA020 Infineon Technologies Infineon-S80KS2563_1.8_V_256-Mb_Octal_xSPI_Interface_HyperRAM_(Self-Refresh_DRAM)-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7dc4255f017dd7ad739905af Description: IC PSRAM 256MBIT SPI/OCTL 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: PSRAM (Pseudo SRAM)
Clock Frequency: 200 MHz
Memory Format: PSRAM
Supplier Device Package: 24-FBGA (6x8)
Part Status: Active
Write Cycle Time - Word, Page: 35ns
Memory Interface: SPI - Octal I/O
Access Time: 35 ns
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
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S79FL512SDSMFVG00 S79FL512SDSMFVG00 Infineon Technologies download Description: IC FLASH 512MBIT SPI/QUAD 16SOIC
Packaging: Tray
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 80 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Part Status: Active
Memory Interface: SPI - Quad I/O
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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S80KS2563GABHA023 S80KS2563GABHA023 Infineon Technologies Infineon-S80KS2563_1.8_V_256-Mb_Octal_xSPI_Interface_HyperRAM_(Self-Refresh_DRAM)-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7dc4255f017dd7ad739905af Description: IC PSRAM 256MBIT SPI/OCTL 24FBGA
Packaging: Tape & Reel (TR)
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: PSRAM (Pseudo SRAM)
Clock Frequency: 200 MHz
Memory Format: PSRAM
Supplier Device Package: 24-FBGA (6x8)
Part Status: Active
Write Cycle Time - Word, Page: 35ns
Memory Interface: SPI - Octal I/O
Access Time: 35 ns
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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S80KS2563GABHI023 S80KS2563GABHI023 Infineon Technologies Infineon-S80KS2563_1.8_V_256-Mb_Octal_xSPI_Interface_HyperRAM_(Self-Refresh_DRAM)-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7dc4255f017dd7ad739905af Description: IC PSRAM 256MBIT SPI/OCTL 24FBGA
Packaging: Tape & Reel (TR)
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: PSRAM (Pseudo SRAM)
Clock Frequency: 200 MHz
Memory Format: PSRAM
Supplier Device Package: 24-FBGA (6x8)
Part Status: Active
Write Cycle Time - Word, Page: 35ns
Memory Interface: SPI - Octal I/O
Access Time: 35 ns
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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S80KS2562GABHA023 S80KS2562GABHA023 Infineon Technologies Infineon-S80KS2562_1.8_V_256-Mb_HyperBus_Interface_HyperRAM_(Self-Refresh_DRAM)-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7dc4255f017dd82db3d308ae Description: IC PSRAM 256MBIT HYPERBUS 24FBGA
Packaging: Tape & Reel (TR)
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: PSRAM (Pseudo SRAM)
Clock Frequency: 200 MHz
Memory Format: PSRAM
Supplier Device Package: 24-FBGA (6x8)
Part Status: Active
Write Cycle Time - Word, Page: 35ns
Memory Interface: HyperBus
Access Time: 35 ns
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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S80KS2562GABHB023 S80KS2562GABHB023 Infineon Technologies Infineon-S80KS2562_1.8_V_256-Mb_HyperBus_Interface_HyperRAM_(Self-Refresh_DRAM)-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7dc4255f017dd82db3d308ae Description: IC PSRAM 256MBIT HYPERBUS 24FBGA
Packaging: Tape & Reel (TR)
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: PSRAM (Pseudo SRAM)
Clock Frequency: 200 MHz
Memory Format: PSRAM
Supplier Device Package: 24-FBGA (6x8)
Part Status: Active
Write Cycle Time - Word, Page: 35ns
Memory Interface: HyperBus
Access Time: 35 ns
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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S80KS2562GABHI023 S80KS2562GABHI023 Infineon Technologies Infineon-S80KS2562_1.8_V_256-Mb_HyperBus_Interface_HyperRAM_(Self-Refresh_DRAM)-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7dc4255f017dd82db3d308ae Description: IC PSRAM 256MBIT HYPERBUS 24FBGA
Packaging: Tape & Reel (TR)
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: PSRAM (Pseudo SRAM)
Clock Frequency: 200 MHz
Memory Format: PSRAM
Supplier Device Package: 24-FBGA (6x8)
Part Status: Active
Write Cycle Time - Word, Page: 35ns
Memory Interface: HyperBus
Access Time: 35 ns
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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S80KS2563GABHM023 S80KS2563GABHM023 Infineon Technologies Infineon-S80KS2563_1.8_V_256-Mb_Octal_xSPI_Interface_HyperRAM_(Self-Refresh_DRAM)-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7dc4255f017dd7ad739905af Description: IC PSRAM 256MBIT SPI/OCTL 24FBGA
Packaging: Tape & Reel (TR)
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: PSRAM (Pseudo SRAM)
Clock Frequency: 200 MHz
Memory Format: PSRAM
Supplier Device Package: 24-FBGA (6x8)
Write Cycle Time - Word, Page: 35ns
Memory Interface: SPI - Octal I/O
Access Time: 35 ns
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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S80KS2562GABHV023 S80KS2562GABHV023 Infineon Technologies Infineon-S80KS2562_1.8_V_256-Mb_HyperBus_Interface_HyperRAM_(Self-Refresh_DRAM)-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7dc4255f017dd82db3d308ae Description: IC PSRAM 256MBIT HYPERBUS 24FBGA
Packaging: Tape & Reel (TR)
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: PSRAM (Pseudo SRAM)
Clock Frequency: 200 MHz
Memory Format: PSRAM
Supplier Device Package: 24-FBGA (6x8)
Part Status: Active
Write Cycle Time - Word, Page: 35ns
Memory Interface: HyperBus
Access Time: 35 ns
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IPB180N06S4H1ATMA1 IPB180N06S4H1ATMA1 Infineon Technologies Infineon-IPB180N06S4-DS-v01_00-en.pdf?fileId=db3a30431ff9881501203ccc9314178e Description: MOSFET N-CH 60V 180A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 100A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 200µA
Supplier Device Package: PG-TO263-7-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 21900 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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S29GL256P11TFI010 S29GL256P11TFI010 Infineon Technologies 128_Mbit_3_V_Page_Flash_with_90_nm_MirrorBit_Process_Technology-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed7850458a5&utm_source=cypress&utm_medium=ref Description: IC FLASH 256MBIT PARALLEL 56TSOP
Packaging: Tray
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Part Status: Active
Write Cycle Time - Word, Page: 110ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
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CYBL10461-56LQXI CYBL10461-56LQXI Infineon Technologies Description: IC RF TXRX+MCU BLE 56QFN
Packaging: Tray
Package / Case: 56-UFQFN Exposed Pad
Sensitivity: -91dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 128kB Flash, 8kB ROM, 16kB SRAM
Type: TxRx + MCU
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 1.8V ~ 5.5V
Power - Output: 3dBm
Protocol: Bluetooth v4.1
Current - Receiving: 16.4mA ~ 21.5mA
Data Rate (Max): 1Mbps
Current - Transmitting: 12.5mA ~ 20mA
Supplier Device Package: 56-QFN (7x7)
GPIO: 36
Modulation: GFSK
RF Family/Standard: Bluetooth
Serial Interfaces: I2C, SPI, UART
DigiKey Programmable: Not Verified
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CY7C65216D-32LTXI CY7C65216D-32LTXI Infineon Technologies Infineon-CY7C65216D-32LTXI-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eea31d17312 Description: USB FULL-SPEED PERIPHERALS
Packaging: Tray
Package / Case: 32-VFQFN Exposed Pad
Function: Bridge
Interface: GPIO, I2C
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.71V ~ 1.89V, 3.15V ~ 3.45V, 4.35V ~ 5.25V, 2V ~ 5.5V
Current - Supply: 18mA
Protocol: USB
Standards: USB 2.0
Supplier Device Package: 32-QFN (5x5)
Part Status: Active
DigiKey Programmable: Not Verified
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ICE3RBR1765JGXUMA1 ICE3RBR1765JGXUMA1 Infineon Technologies Infineon-ICE3RBR1765JG-DS-v01_00-EN.pdf?fileId=5546d46253f6505701549aaf7d69751b Description: IC OFFLINE SWITCH FLYBACK 12DSO
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width), 12 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Duty Cycle: 75%
Frequency - Switching: 65kHz
Internal Switch(s): Yes
Voltage - Breakdown: 650V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10.5V ~ 25V
Supplier Device Package: PG-DSO-12-19
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 18 V
Part Status: Active
Power (Watts): 41.5 W
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IPT013N08NM5LF IPT013N08NM5LF Infineon Technologies Infineon-IPT013N08NM5LF-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7ba0a117017ba1e0a29d018f Description: SINGLE N-CHANNEL LINEAR FET 80V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 333A (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 150A, 10V
Power Dissipation (Max): 3.1W (Ta), 278W (Tc)
Vgs(th) (Max) @ Id: 4.1V @ 250µA
Supplier Device Package: PG-HSOF-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 158 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 820 pF @ 40 V
Produkt ist nicht verfügbar
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IPT013N08NM5LF IPT013N08NM5LF Infineon Technologies Infineon-IPT013N08NM5LF-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7ba0a117017ba1e0a29d018f Description: SINGLE N-CHANNEL LINEAR FET 80V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 333A (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 150A, 10V
Power Dissipation (Max): 3.1W (Ta), 278W (Tc)
Vgs(th) (Max) @ Id: 4.1V @ 250µA
Supplier Device Package: PG-HSOF-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 158 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 820 pF @ 40 V
Produkt ist nicht verfügbar
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IPT012N06NATMA1 IPT012N06NATMA1 Infineon Technologies Infineon-IPT012N06N-DS-v02_00-EN.pdf?fileId=5546d4625acbae4c015ad1610de5208c Description: MOSFET N-CH 60V 240A 8HSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 100A, 10V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 143µA
Supplier Device Package: PG-HSOF-8-1
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9750 pF @ 30 V
Produkt ist nicht verfügbar
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IPT012N06NATMA1 IPT012N06NATMA1 Infineon Technologies Infineon-IPT012N06N-DS-v02_00-EN.pdf?fileId=5546d4625acbae4c015ad1610de5208c Description: MOSFET N-CH 60V 240A 8HSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 100A, 10V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 143µA
Supplier Device Package: PG-HSOF-8-1
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9750 pF @ 30 V
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IKZA75N120CH7XKSA1 IKZA75N120CH7XKSA1 Infineon Technologies Infineon-IKZA75N120CH7-DataSheet-v01_10-EN.pdf?fileId=8ac78c8c84a33f400184e2a12c9a2d5c Description: IGBT TRENCH FS 1200V 109A TO247
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 95 ns
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 75A
Supplier Device Package: PG-TO247-4-U02
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 40ns/359ns
Switching Energy: 2.01mJ (on), 1.76mJ (off)
Gate Charge: 550 nC
Part Status: Active
Current - Collector (Ic) (Max): 109 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 549 W
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CY3250-21X23-POD CY3250-21X23-POD Infineon Technologies Description: PSOC POD FOR CY8C21X23
Produkt ist nicht verfügbar
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CY7C64113-PVC CY7C64113-PVC Infineon Technologies CY7C64013%2C113.pdf Description: IC MCU 8K FULL SPEED USB 48SSOP
Packaging: Tube
Package / Case: 48-BSSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Interface: I2C, USB, HAPI
RAM Size: 256 x 8
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4V ~ 5.25V
Controller Series: CY7C641xx
Program Memory Type: OTP (8kB)
Applications: USB Microcontroller
Core Processor: M8C
Supplier Device Package: 48-SSOP
Part Status: Obsolete
Number of I/O: 36
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY8C27643-24LFXI CY8C27643-24LFXI Infineon Technologies CY8C27143%2C%20243%2C%20443%2C%20543%2C%20643.pdf description Description: IC MCU 8BIT 16KB FLASH 48QFN
Packaging: Tube
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 256 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Data Converters: A/D 4x14b; D/A 4x9b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.25V
Connectivity: I2C, SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 48-QFN (7x7)
Part Status: Obsolete
Number of I/O: 44
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY7C1320KV18-250BZI CY7C1320KV18-250BZI Infineon Technologies Infineon-CY7C1318KV18_CY7C1320KV18_18-Mbit_DDR_II_SRAM_Two-Word_Burst_Architecture-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebd213a2f43&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integr Description: IC SRAM 18MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, DDR II
Clock Frequency: 250 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Part Status: Active
Memory Interface: Parallel
Memory Organization: 512K x 36
DigiKey Programmable: Not Verified
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CY7C1325H-133AXI CY7C1325H-133AXI Infineon Technologies Infineon-CY7C1325H-133AXI-DataSheet-v05_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec4752239f0 Description: IC SRAM 4.5MBIT PAR 100TQFP
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53+9.55 EUR
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CY7C1327S-166AXC CY7C1327S-166AXC Infineon Technologies Description: IC SRAM 4.5MBIT PARALLEL 100TQFP
auf Bestellung 333 Stücke:
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CY7C1324S-133AXC CY7C1324S-133AXC Infineon Technologies Description: IC SRAM 2MBIT PARALLEL 100TQFP
auf Bestellung 1815 Stücke:
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57+8.87 EUR
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CY7C1325G-100AXC CY7C1325G-100AXC Infineon Technologies Description: IC SRAM 4.5MBIT PAR 100TQFP
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CY7C1328S-133AXI CY7C1328S-133AXI Infineon Technologies Description: IC SRAM 4.5MBIT PARALLEL 100TQFP
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CY7C1329H-133AXC CY7C1329H-133AXC Infineon Technologies Infineon-CY7C1329H_2_MBIT_(64K_X_32)_PIPELINED_SYNC_SRAM-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec44ac739b9 Description: IC SRAM 2MBIT PARALLEL 100TQFP
auf Bestellung 489 Stücke:
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5+3.82 EUR
Mindestbestellmenge: 5
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CY7C1329H-133AXC CY7C1329H-133AXC Infineon Technologies Infineon-CY7C1329H_2_MBIT_(64K_X_32)_PIPELINED_SYNC_SRAM-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec44ac739b9 Description: IC SRAM 2MBIT PARALLEL 100TQFP
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CY7C1325G-100AXI CY7C1325G-100AXI Infineon Technologies Description: IC SRAM 4.5MBIT PAR 100TQFP
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CY7C1325G-133BGC CY7C1325G-133BGC Infineon Technologies Description: IC SRAM 4.5MBIT PAR 119PBGA
Produkt ist nicht verfügbar
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CY7C1324H-133AXC CY7C1324H-133AXC Infineon Technologies CY7C1324H-133AXC.pdf Description: IC SRAM 2MBIT PARALLEL 100TQFP
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57+8.87 EUR
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CY7C1320SV18-250BZC CY7C1320SV18-250BZC Infineon Technologies Description: IC SRAM 18MBIT PAR 165FBGA
auf Bestellung 883 Stücke:
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8+66.88 EUR
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CY7C1320CV18-250BZXC CY7C1320CV18-250BZXC Infineon Technologies CY7C1318CV18%2C%20CY7C1320CV18.pdf Description: IC SRAM 18MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, DDR II
Clock Frequency: 250 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 512K x 36
DigiKey Programmable: Not Verified
auf Bestellung 87 Stücke:
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1+69.31 EUR
10+64.27 EUR
25+61.98 EUR
40+60.43 EUR
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IPB65R150CFDATMA2 IPB65R150CFDATMA2 Infineon Technologies Infineon-IPX65R150CFD-DS-v02_00-en.pdf?fileId=db3a3043338c8ac80133ace218433063 Description: MOSFET N-CH 650V 22.4A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22.4A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 9.3A, 10V
Power Dissipation (Max): 195.3W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 900µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2340 pF @ 100 V
auf Bestellung 1000 Stücke:
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1000+2.74 EUR
Mindestbestellmenge: 1000
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IPB015N06NF2SATMA1 Infineon-IPB015N06NF2S-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c850f4bee01851c67bcc63b27
IPB015N06NF2SATMA1
Hersteller: Infineon Technologies
Description: TRENCH 40<-<100V
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Ta), 195A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 100A, 10V
Power Dissipation (Max): 3.8W (Ta), 250W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 186µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 233 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10500 pF @ 30 V
auf Bestellung 407 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+4.01 EUR
10+2.95 EUR
100+2.11 EUR
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S29GL256S90TFA010 Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai
S29GL256S90TFA010
Hersteller: Infineon Technologies
Description: IC FLASH 256MBIT PARALLEL 56TSOP
Packaging: Tray
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 16M x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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S29GL256S90GHI010 Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai
S29GL256S90GHI010
Hersteller: Infineon Technologies
Description: IC FLASH 256MBIT PARALLEL 56FBGA
auf Bestellung 333 Stücke:
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Anzahl Preis
97+5.16 EUR
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S29GL256S90GHI010 Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai
S29GL256S90GHI010
Hersteller: Infineon Technologies
Description: IC FLASH 256MBIT PARALLEL 56FBGA
Produkt ist nicht verfügbar
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S29GL256S90TAA023 Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai
S29GL256S90TAA023
Hersteller: Infineon Technologies
Description: IC FLASH 256MBIT PARALLEL 56TSOP
Produkt ist nicht verfügbar
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S29GL256S90FHA020 Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai
S29GL256S90FHA020
Hersteller: Infineon Technologies
Description: IC FLASH 256MBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 16M x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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S29GL256S90FHA023 Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai
S29GL256S90FHA023
Hersteller: Infineon Technologies
Description: IC FLASH 256MBIT PARALLEL 64FBGA
Packaging: Tape & Reel (TR)
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Part Status: Active
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 16M x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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TLE92613BQXXUMA2 Infineon-TLE9261-3BQX-DataSheet-v01_20-EN.pdf?fileId=5546d462602a9dc801609757e65c3921
TLE92613BQXXUMA2
Hersteller: Infineon Technologies
Description: OPTIREG SYST BASIS CHIPS
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 3V ~ 28V
Applications: System Basis Chip
Current - Supply: 3.5mA
Supplier Device Package: PG-VQFN-48-79
Produkt ist nicht verfügbar
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FS900R08A2P2B32BOSA1 Infineon-FS900R08A2P2_B32-DS-v03_00-EN.pdf?fileId=5546d46262b31d2e0163019394f733b8
FS900R08A2P2B32BOSA1
Hersteller: Infineon Technologies
Description: IGBT MODULE PACK2 DRV HYBRID2-1
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.25V @ 15V, 550A
NTC Thermistor: Yes
Supplier Device Package: AG-HYBRID2-1
Part Status: Obsolete
Current - Collector (Ic) (Max): 550 A
Voltage - Collector Emitter Breakdown (Max): 750 V
Power - Max: 1546 W
Current - Collector Cutoff (Max): 500 µA
Input Capacitance (Cies) @ Vce: 105 nF @ 25 V
auf Bestellung 120 Stücke:
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Anzahl Preis
1+1410.62 EUR
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FS900R08A2P2B32BOSA1 Infineon-FS900R08A2P2_B32-DS-v03_00-EN.pdf?fileId=5546d46262b31d2e0163019394f733b8
FS900R08A2P2B32BOSA1
Hersteller: Infineon Technologies
Description: IGBT MODULE PACK2 DRV HYBRID2-1
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.25V @ 15V, 550A
NTC Thermistor: Yes
Supplier Device Package: AG-HYBRID2-1
Part Status: Obsolete
Current - Collector (Ic) (Max): 550 A
Voltage - Collector Emitter Breakdown (Max): 750 V
Power - Max: 1546 W
Current - Collector Cutoff (Max): 500 µA
Input Capacitance (Cies) @ Vce: 105 nF @ 25 V
Produkt ist nicht verfügbar
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IFX25001MEV25 INFNS14793-1.pdf?t.download=true&u=5oefqw
IFX25001MEV25
Hersteller: Infineon Technologies
Description: IC REG LINEAR FIXED LDO REG
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 400mA
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 220 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-SOT223-4-21
Voltage - Output (Min/Fixed): 2.5V
PSRR: 60dB (100Hz)
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 30 mA
auf Bestellung 8694 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1039+0.47 EUR
Mindestbestellmenge: 1039
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IPB014N04NF2SATMA1 Infineon-IPB014N04NF2S-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c850f4bee01851d12b8ec6af7
IPB014N04NF2SATMA1
Hersteller: Infineon Technologies
Description: TRENCH <= 40V
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Ta), 191A (Tc)
Rds On (Max) @ Id, Vgs: 1.45mOhm @ 100A, 10V
Power Dissipation (Max): 3.8W (Ta), 188W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 126µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 159 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7500 pF @ 20 V
Produkt ist nicht verfügbar
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IPB014N04NF2SATMA1 Infineon-IPB014N04NF2S-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c850f4bee01851d12b8ec6af7
IPB014N04NF2SATMA1
Hersteller: Infineon Technologies
Description: TRENCH <= 40V
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Ta), 191A (Tc)
Rds On (Max) @ Id, Vgs: 1.45mOhm @ 100A, 10V
Power Dissipation (Max): 3.8W (Ta), 188W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 126µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 159 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7500 pF @ 20 V
auf Bestellung 348 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.77 EUR
10+2.58 EUR
100+1.76 EUR
Mindestbestellmenge: 5
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MB96F338USAPMC-GS-N2E2 download
MB96F338USAPMC-GS-N2E2
Hersteller: Infineon Technologies
Description: IC MCU 16BIT 544KB FLASH 144LQFP
Packaging: Tray
Package / Case: 144-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 544KB (544K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: F²MC-16FX
Data Converters: A/D 36x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I2C, LINbus, SCI, UART/USART, USB
Peripherals: DMA, LVD, LVR, POR, PWM, WDT
Supplier Device Package: 144-LQFP (20x20)
Part Status: Obsolete
Number of I/O: 120
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CYBLE-343072-02 Infineon-CYBLE-343072-02_CYBLE-333073-02_CYBLE-333074-02_AIROC_Bluetooth_LE_module-AdditionalTechnicalInformation-v02_00-EN.pdf?fileId=8ac78c8c7d718a49017d9a4f3ee63c2d
CYBLE-343072-02
Hersteller: Infineon Technologies
Description: RF TXRX MOD BT TH SMD
Packaging: Tape & Reel (TR)
Package / Case: 43-SMD Module
Sensitivity: -94.5dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 512kB Flash, 384kB RAM
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 2.5V ~ 3.6V
Power - Output: 12dBm
Data Rate: 6Mbps
Protocol: Bluetooth v5.2
Current - Receiving: 8mA
Current - Transmitting: 18mA
Antenna Type: Integrated, Trace
Utilized IC / Part: CYW20835
Modulation: GFSK
RF Family/Standard: Bluetooth
Serial Interfaces: ADC, I2C, PWM, SPI, UART
Part Status: Active
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CYBLE-343072-02 Infineon-CYBLE-343072-02_CYBLE-333073-02_CYBLE-333074-02_AIROC_Bluetooth_LE_module-AdditionalTechnicalInformation-v02_00-EN.pdf?fileId=8ac78c8c7d718a49017d9a4f3ee63c2d
CYBLE-343072-02
Hersteller: Infineon Technologies
Description: RF TXRX MOD BT TH SMD
Packaging: Cut Tape (CT)
Package / Case: 43-SMD Module
Sensitivity: -94.5dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 512kB Flash, 384kB RAM
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 2.5V ~ 3.6V
Power - Output: 12dBm
Data Rate: 6Mbps
Protocol: Bluetooth v5.2
Current - Receiving: 8mA
Current - Transmitting: 18mA
Antenna Type: Integrated, Trace
Utilized IC / Part: CYW20835
Modulation: GFSK
RF Family/Standard: Bluetooth
Serial Interfaces: ADC, I2C, PWM, SPI, UART
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 830 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+12.78 EUR
10+9.88 EUR
25+9.00 EUR
100+7.92 EUR
250+7.34 EUR
Mindestbestellmenge: 2
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S80KS2562GABHI020 Infineon-S80KS2562_1.8_V_256-Mb_HyperBus_Interface_HyperRAM_(Self-Refresh_DRAM)-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7dc4255f017dd82db3d308ae
S80KS2562GABHI020
Hersteller: Infineon Technologies
Description: IC PSRAM 256MBIT HYPERBUS 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: PSRAM (Pseudo SRAM)
Clock Frequency: 200 MHz
Memory Format: PSRAM
Supplier Device Package: 24-FBGA (6x8)
Part Status: Active
Write Cycle Time - Word, Page: 35ns
Memory Interface: HyperBus
Access Time: 35 ns
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
auf Bestellung 488 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+9.54 EUR
10+8.88 EUR
25+8.61 EUR
50+8.41 EUR
100+8.21 EUR
338+7.86 EUR
Mindestbestellmenge: 2
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S80KS2563GABHB020 Infineon-S80KS2563_1.8_V_256-Mb_Octal_xSPI_Interface_HyperRAM_(Self-Refresh_DRAM)-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7dc4255f017dd7ad739905af
S80KS2563GABHB020
Hersteller: Infineon Technologies
Description: IC PSRAM 256MBIT SPI/OCTL 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: PSRAM (Pseudo SRAM)
Clock Frequency: 200 MHz
Memory Format: PSRAM
Supplier Device Package: 24-FBGA (6x8)
Part Status: Active
Write Cycle Time - Word, Page: 35ns
Memory Interface: SPI - Octal I/O
Access Time: 35 ns
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
auf Bestellung 636 Stücke:
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2+9.72 EUR
10+9.03 EUR
25+8.75 EUR
50+8.55 EUR
100+8.34 EUR
338+7.98 EUR
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S80KS2562GABHA020 Infineon-S80KS2562_1.8_V_256-Mb_HyperBus_Interface_HyperRAM_(Self-Refresh_DRAM)-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7dc4255f017dd82db3d308ae
S80KS2562GABHA020
Hersteller: Infineon Technologies
Description: IC PSRAM 256MBIT HYPERBUS 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: PSRAM (Pseudo SRAM)
Clock Frequency: 200 MHz
Memory Format: PSRAM
Supplier Device Package: 24-FBGA (6x8)
Part Status: Active
Write Cycle Time - Word, Page: 35ns
Memory Interface: HyperBus
Access Time: 35 ns
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
auf Bestellung 670 Stücke:
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Anzahl Preis
2+9.03 EUR
10+8.39 EUR
25+8.13 EUR
50+7.94 EUR
100+7.75 EUR
338+7.42 EUR
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S80KS2562GABHV020 Infineon-S80KS2562_1.8_V_256-Mb_HyperBus_Interface_HyperRAM_(Self-Refresh_DRAM)-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7dc4255f017dd82db3d308ae
S80KS2562GABHV020
Hersteller: Infineon Technologies
Description: IC PSRAM 256MBIT HYPERBUS 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: PSRAM (Pseudo SRAM)
Clock Frequency: 200 MHz
Memory Format: PSRAM
Supplier Device Package: 24-FBGA (6x8)
Part Status: Active
Write Cycle Time - Word, Page: 35ns
Memory Interface: HyperBus
Access Time: 35 ns
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
auf Bestellung 308 Stücke:
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Anzahl Preis
2+10.28 EUR
10+9.55 EUR
25+9.26 EUR
50+9.04 EUR
100+8.82 EUR
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S80KS2563GABHV020 Infineon-S80KS2563_1.8_V_256-Mb_Octal_xSPI_Interface_HyperRAM_(Self-Refresh_DRAM)-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7dc4255f017dd7ad739905af
S80KS2563GABHV020
Hersteller: Infineon Technologies
Description: IC PSRAM 256MBIT SPI/OCTL 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: PSRAM (Pseudo SRAM)
Clock Frequency: 200 MHz
Memory Format: PSRAM
Supplier Device Package: 24-FBGA (6x8)
Part Status: Active
Write Cycle Time - Word, Page: 35ns
Memory Interface: SPI - Octal I/O
Access Time: 35 ns
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
auf Bestellung 245 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+10.28 EUR
10+9.55 EUR
25+9.26 EUR
50+9.04 EUR
100+8.82 EUR
Mindestbestellmenge: 2
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S80KS2563GABHM020 Infineon-S80KS2563_1.8_V_256-Mb_Octal_xSPI_Interface_HyperRAM_(Self-Refresh_DRAM)-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7dc4255f017dd7ad739905af
S80KS2563GABHM020
Hersteller: Infineon Technologies
Description: IC PSRAM 256MBIT SPI/OCTL 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: PSRAM (Pseudo SRAM)
Clock Frequency: 200 MHz
Memory Format: PSRAM
Supplier Device Package: 24-FBGA (6x8)
Part Status: Active
Write Cycle Time - Word, Page: 35ns
Memory Interface: SPI - Octal I/O
Access Time: 35 ns
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
auf Bestellung 676 Stücke:
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2+10.31 EUR
10+9.60 EUR
25+9.30 EUR
50+9.08 EUR
100+8.86 EUR
338+8.48 EUR
676+8.27 EUR
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S80KS2562GABHB020 download
S80KS2562GABHB020
Hersteller: Infineon Technologies
Description: IC PSRAM 256MBIT HYPERBUS 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: PSRAM (Pseudo SRAM)
Clock Frequency: 200 MHz
Memory Format: PSRAM
Supplier Device Package: 24-FBGA (6x8)
Part Status: Active
Write Cycle Time - Word, Page: 35ns
Memory Interface: HyperBus
Access Time: 35 ns
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
auf Bestellung 676 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+9.72 EUR
10+9.03 EUR
25+8.75 EUR
50+8.55 EUR
100+8.34 EUR
338+7.98 EUR
676+7.78 EUR
Mindestbestellmenge: 2
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S80KS2562GABHM020 Infineon-S80KS2562_1.8_V_256-Mb_HyperBus_Interface_HyperRAM_(Self-Refresh_DRAM)-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7dc4255f017dd82db3d308ae
S80KS2562GABHM020
Hersteller: Infineon Technologies
Description: IC PSRAM 256MBIT HYPERBUS 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: PSRAM (Pseudo SRAM)
Clock Frequency: 200 MHz
Memory Format: PSRAM
Supplier Device Package: 24-FBGA (6x8)
Part Status: Active
Write Cycle Time - Word, Page: 35ns
Memory Interface: HyperBus
Access Time: 35 ns
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
auf Bestellung 3 Stücke:
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Anzahl Preis
2+9.26 EUR
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S80KS2563GABHA020 Infineon-S80KS2563_1.8_V_256-Mb_Octal_xSPI_Interface_HyperRAM_(Self-Refresh_DRAM)-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7dc4255f017dd7ad739905af
S80KS2563GABHA020
Hersteller: Infineon Technologies
Description: IC PSRAM 256MBIT SPI/OCTL 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: PSRAM (Pseudo SRAM)
Clock Frequency: 200 MHz
Memory Format: PSRAM
Supplier Device Package: 24-FBGA (6x8)
Part Status: Active
Write Cycle Time - Word, Page: 35ns
Memory Interface: SPI - Octal I/O
Access Time: 35 ns
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
auf Bestellung 648 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+9.03 EUR
10+8.39 EUR
25+8.13 EUR
50+7.94 EUR
100+7.75 EUR
338+7.42 EUR
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S79FL512SDSMFVG00 download
S79FL512SDSMFVG00
Hersteller: Infineon Technologies
Description: IC FLASH 512MBIT SPI/QUAD 16SOIC
Packaging: Tray
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 80 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Part Status: Active
Memory Interface: SPI - Quad I/O
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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S80KS2563GABHA023 Infineon-S80KS2563_1.8_V_256-Mb_Octal_xSPI_Interface_HyperRAM_(Self-Refresh_DRAM)-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7dc4255f017dd7ad739905af
S80KS2563GABHA023
Hersteller: Infineon Technologies
Description: IC PSRAM 256MBIT SPI/OCTL 24FBGA
Packaging: Tape & Reel (TR)
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: PSRAM (Pseudo SRAM)
Clock Frequency: 200 MHz
Memory Format: PSRAM
Supplier Device Package: 24-FBGA (6x8)
Part Status: Active
Write Cycle Time - Word, Page: 35ns
Memory Interface: SPI - Octal I/O
Access Time: 35 ns
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S80KS2563GABHI023 Infineon-S80KS2563_1.8_V_256-Mb_Octal_xSPI_Interface_HyperRAM_(Self-Refresh_DRAM)-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7dc4255f017dd7ad739905af
S80KS2563GABHI023
Hersteller: Infineon Technologies
Description: IC PSRAM 256MBIT SPI/OCTL 24FBGA
Packaging: Tape & Reel (TR)
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: PSRAM (Pseudo SRAM)
Clock Frequency: 200 MHz
Memory Format: PSRAM
Supplier Device Package: 24-FBGA (6x8)
Part Status: Active
Write Cycle Time - Word, Page: 35ns
Memory Interface: SPI - Octal I/O
Access Time: 35 ns
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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S80KS2562GABHA023 Infineon-S80KS2562_1.8_V_256-Mb_HyperBus_Interface_HyperRAM_(Self-Refresh_DRAM)-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7dc4255f017dd82db3d308ae
S80KS2562GABHA023
Hersteller: Infineon Technologies
Description: IC PSRAM 256MBIT HYPERBUS 24FBGA
Packaging: Tape & Reel (TR)
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: PSRAM (Pseudo SRAM)
Clock Frequency: 200 MHz
Memory Format: PSRAM
Supplier Device Package: 24-FBGA (6x8)
Part Status: Active
Write Cycle Time - Word, Page: 35ns
Memory Interface: HyperBus
Access Time: 35 ns
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S80KS2562GABHB023 Infineon-S80KS2562_1.8_V_256-Mb_HyperBus_Interface_HyperRAM_(Self-Refresh_DRAM)-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7dc4255f017dd82db3d308ae
S80KS2562GABHB023
Hersteller: Infineon Technologies
Description: IC PSRAM 256MBIT HYPERBUS 24FBGA
Packaging: Tape & Reel (TR)
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: PSRAM (Pseudo SRAM)
Clock Frequency: 200 MHz
Memory Format: PSRAM
Supplier Device Package: 24-FBGA (6x8)
Part Status: Active
Write Cycle Time - Word, Page: 35ns
Memory Interface: HyperBus
Access Time: 35 ns
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S80KS2562GABHI023 Infineon-S80KS2562_1.8_V_256-Mb_HyperBus_Interface_HyperRAM_(Self-Refresh_DRAM)-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7dc4255f017dd82db3d308ae
S80KS2562GABHI023
Hersteller: Infineon Technologies
Description: IC PSRAM 256MBIT HYPERBUS 24FBGA
Packaging: Tape & Reel (TR)
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: PSRAM (Pseudo SRAM)
Clock Frequency: 200 MHz
Memory Format: PSRAM
Supplier Device Package: 24-FBGA (6x8)
Part Status: Active
Write Cycle Time - Word, Page: 35ns
Memory Interface: HyperBus
Access Time: 35 ns
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S80KS2563GABHM023 Infineon-S80KS2563_1.8_V_256-Mb_Octal_xSPI_Interface_HyperRAM_(Self-Refresh_DRAM)-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7dc4255f017dd7ad739905af
S80KS2563GABHM023
Hersteller: Infineon Technologies
Description: IC PSRAM 256MBIT SPI/OCTL 24FBGA
Packaging: Tape & Reel (TR)
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: PSRAM (Pseudo SRAM)
Clock Frequency: 200 MHz
Memory Format: PSRAM
Supplier Device Package: 24-FBGA (6x8)
Write Cycle Time - Word, Page: 35ns
Memory Interface: SPI - Octal I/O
Access Time: 35 ns
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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S80KS2562GABHV023 Infineon-S80KS2562_1.8_V_256-Mb_HyperBus_Interface_HyperRAM_(Self-Refresh_DRAM)-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7dc4255f017dd82db3d308ae
S80KS2562GABHV023
Hersteller: Infineon Technologies
Description: IC PSRAM 256MBIT HYPERBUS 24FBGA
Packaging: Tape & Reel (TR)
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: PSRAM (Pseudo SRAM)
Clock Frequency: 200 MHz
Memory Format: PSRAM
Supplier Device Package: 24-FBGA (6x8)
Part Status: Active
Write Cycle Time - Word, Page: 35ns
Memory Interface: HyperBus
Access Time: 35 ns
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IPB180N06S4H1ATMA1 Infineon-IPB180N06S4-DS-v01_00-en.pdf?fileId=db3a30431ff9881501203ccc9314178e
IPB180N06S4H1ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 180A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 100A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 200µA
Supplier Device Package: PG-TO263-7-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 21900 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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S29GL256P11TFI010 128_Mbit_3_V_Page_Flash_with_90_nm_MirrorBit_Process_Technology-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed7850458a5&utm_source=cypress&utm_medium=ref
S29GL256P11TFI010
Hersteller: Infineon Technologies
Description: IC FLASH 256MBIT PARALLEL 56TSOP
Packaging: Tray
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Part Status: Active
Write Cycle Time - Word, Page: 110ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
auf Bestellung 352 Stücke:
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Anzahl Preis
2+15.36 EUR
10+14.27 EUR
25+13.83 EUR
91+13.21 EUR
182+12.89 EUR
273+12.70 EUR
Mindestbestellmenge: 2
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CYBL10461-56LQXI
CYBL10461-56LQXI
Hersteller: Infineon Technologies
Description: IC RF TXRX+MCU BLE 56QFN
Packaging: Tray
Package / Case: 56-UFQFN Exposed Pad
Sensitivity: -91dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 128kB Flash, 8kB ROM, 16kB SRAM
Type: TxRx + MCU
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 1.8V ~ 5.5V
Power - Output: 3dBm
Protocol: Bluetooth v4.1
Current - Receiving: 16.4mA ~ 21.5mA
Data Rate (Max): 1Mbps
Current - Transmitting: 12.5mA ~ 20mA
Supplier Device Package: 56-QFN (7x7)
GPIO: 36
Modulation: GFSK
RF Family/Standard: Bluetooth
Serial Interfaces: I2C, SPI, UART
DigiKey Programmable: Not Verified
auf Bestellung 100 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+9.86 EUR
10+7.55 EUR
25+6.97 EUR
80+6.42 EUR
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CY7C65216D-32LTXI Infineon-CY7C65216D-32LTXI-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eea31d17312
CY7C65216D-32LTXI
Hersteller: Infineon Technologies
Description: USB FULL-SPEED PERIPHERALS
Packaging: Tray
Package / Case: 32-VFQFN Exposed Pad
Function: Bridge
Interface: GPIO, I2C
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.71V ~ 1.89V, 3.15V ~ 3.45V, 4.35V ~ 5.25V, 2V ~ 5.5V
Current - Supply: 18mA
Protocol: USB
Standards: USB 2.0
Supplier Device Package: 32-QFN (5x5)
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 4898 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.47 EUR
10+4.92 EUR
25+4.65 EUR
80+4.03 EUR
230+3.83 EUR
490+3.43 EUR
980+2.90 EUR
2450+2.75 EUR
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ICE3RBR1765JGXUMA1 Infineon-ICE3RBR1765JG-DS-v01_00-EN.pdf?fileId=5546d46253f6505701549aaf7d69751b
ICE3RBR1765JGXUMA1
Hersteller: Infineon Technologies
Description: IC OFFLINE SWITCH FLYBACK 12DSO
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width), 12 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Duty Cycle: 75%
Frequency - Switching: 65kHz
Internal Switch(s): Yes
Voltage - Breakdown: 650V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10.5V ~ 25V
Supplier Device Package: PG-DSO-12-19
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 18 V
Part Status: Active
Power (Watts): 41.5 W
auf Bestellung 2464 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.87 EUR
10+2.88 EUR
25+2.63 EUR
100+2.35 EUR
250+2.22 EUR
500+2.14 EUR
1000+2.08 EUR
Mindestbestellmenge: 5
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IPT013N08NM5LF Infineon-IPT013N08NM5LF-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7ba0a117017ba1e0a29d018f
IPT013N08NM5LF
Hersteller: Infineon Technologies
Description: SINGLE N-CHANNEL LINEAR FET 80V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 333A (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 150A, 10V
Power Dissipation (Max): 3.1W (Ta), 278W (Tc)
Vgs(th) (Max) @ Id: 4.1V @ 250µA
Supplier Device Package: PG-HSOF-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 158 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 820 pF @ 40 V
Produkt ist nicht verfügbar
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IPT013N08NM5LF Infineon-IPT013N08NM5LF-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7ba0a117017ba1e0a29d018f
IPT013N08NM5LF
Hersteller: Infineon Technologies
Description: SINGLE N-CHANNEL LINEAR FET 80V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 333A (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 150A, 10V
Power Dissipation (Max): 3.1W (Ta), 278W (Tc)
Vgs(th) (Max) @ Id: 4.1V @ 250µA
Supplier Device Package: PG-HSOF-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 158 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 820 pF @ 40 V
Produkt ist nicht verfügbar
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IPT012N06NATMA1 Infineon-IPT012N06N-DS-v02_00-EN.pdf?fileId=5546d4625acbae4c015ad1610de5208c
IPT012N06NATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 240A 8HSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 100A, 10V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 143µA
Supplier Device Package: PG-HSOF-8-1
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9750 pF @ 30 V
Produkt ist nicht verfügbar
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IPT012N06NATMA1 Infineon-IPT012N06N-DS-v02_00-EN.pdf?fileId=5546d4625acbae4c015ad1610de5208c
IPT012N06NATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 240A 8HSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 100A, 10V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 143µA
Supplier Device Package: PG-HSOF-8-1
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9750 pF @ 30 V
auf Bestellung 1330 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+11.12 EUR
10+7.50 EUR
100+5.45 EUR
500+4.66 EUR
Mindestbestellmenge: 2
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IKZA75N120CH7XKSA1 Infineon-IKZA75N120CH7-DataSheet-v01_10-EN.pdf?fileId=8ac78c8c84a33f400184e2a12c9a2d5c
IKZA75N120CH7XKSA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 1200V 109A TO247
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 95 ns
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 75A
Supplier Device Package: PG-TO247-4-U02
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 40ns/359ns
Switching Energy: 2.01mJ (on), 1.76mJ (off)
Gate Charge: 550 nC
Part Status: Active
Current - Collector (Ic) (Max): 109 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 549 W
auf Bestellung 160 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+19.52 EUR
30+11.70 EUR
120+9.98 EUR
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CY3250-21X23-POD
CY3250-21X23-POD
Hersteller: Infineon Technologies
Description: PSOC POD FOR CY8C21X23
Produkt ist nicht verfügbar
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CY7C64113-PVC CY7C64013%2C113.pdf
CY7C64113-PVC
Hersteller: Infineon Technologies
Description: IC MCU 8K FULL SPEED USB 48SSOP
Packaging: Tube
Package / Case: 48-BSSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Interface: I2C, USB, HAPI
RAM Size: 256 x 8
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4V ~ 5.25V
Controller Series: CY7C641xx
Program Memory Type: OTP (8kB)
Applications: USB Microcontroller
Core Processor: M8C
Supplier Device Package: 48-SSOP
Part Status: Obsolete
Number of I/O: 36
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY8C27643-24LFXI description CY8C27143%2C%20243%2C%20443%2C%20543%2C%20643.pdf
CY8C27643-24LFXI
Hersteller: Infineon Technologies
Description: IC MCU 8BIT 16KB FLASH 48QFN
Packaging: Tube
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 256 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Data Converters: A/D 4x14b; D/A 4x9b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.25V
Connectivity: I2C, SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 48-QFN (7x7)
Part Status: Obsolete
Number of I/O: 44
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY7C1320KV18-250BZI Infineon-CY7C1318KV18_CY7C1320KV18_18-Mbit_DDR_II_SRAM_Two-Word_Burst_Architecture-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebd213a2f43&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integr
CY7C1320KV18-250BZI
Hersteller: Infineon Technologies
Description: IC SRAM 18MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, DDR II
Clock Frequency: 250 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Part Status: Active
Memory Interface: Parallel
Memory Organization: 512K x 36
DigiKey Programmable: Not Verified
auf Bestellung 472 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+19.20 EUR
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CY7C1325H-133AXI Infineon-CY7C1325H-133AXI-DataSheet-v05_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec4752239f0
CY7C1325H-133AXI
Hersteller: Infineon Technologies
Description: IC SRAM 4.5MBIT PAR 100TQFP
auf Bestellung 157 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
53+9.55 EUR
Mindestbestellmenge: 53
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CY7C1327S-166AXC
CY7C1327S-166AXC
Hersteller: Infineon Technologies
Description: IC SRAM 4.5MBIT PARALLEL 100TQFP
auf Bestellung 333 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
53+9.55 EUR
Mindestbestellmenge: 53
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CY7C1324S-133AXC
CY7C1324S-133AXC
Hersteller: Infineon Technologies
Description: IC SRAM 2MBIT PARALLEL 100TQFP
auf Bestellung 1815 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
57+8.87 EUR
Mindestbestellmenge: 57
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CY7C1325G-100AXC
CY7C1325G-100AXC
Hersteller: Infineon Technologies
Description: IC SRAM 4.5MBIT PAR 100TQFP
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY7C1328S-133AXI
CY7C1328S-133AXI
Hersteller: Infineon Technologies
Description: IC SRAM 4.5MBIT PARALLEL 100TQFP
auf Bestellung 1708 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
43+11.71 EUR
Mindestbestellmenge: 43
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CY7C1329H-133AXC Infineon-CY7C1329H_2_MBIT_(64K_X_32)_PIPELINED_SYNC_SRAM-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec44ac739b9
CY7C1329H-133AXC
Hersteller: Infineon Technologies
Description: IC SRAM 2MBIT PARALLEL 100TQFP
auf Bestellung 489 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.82 EUR
Mindestbestellmenge: 5
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CY7C1329H-133AXC Infineon-CY7C1329H_2_MBIT_(64K_X_32)_PIPELINED_SYNC_SRAM-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec44ac739b9
CY7C1329H-133AXC
Hersteller: Infineon Technologies
Description: IC SRAM 2MBIT PARALLEL 100TQFP
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY7C1325G-100AXI
CY7C1325G-100AXI
Hersteller: Infineon Technologies
Description: IC SRAM 4.5MBIT PAR 100TQFP
Produkt ist nicht verfügbar
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CY7C1325G-133BGC
CY7C1325G-133BGC
Hersteller: Infineon Technologies
Description: IC SRAM 4.5MBIT PAR 119PBGA
Produkt ist nicht verfügbar
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CY7C1324H-133AXC CY7C1324H-133AXC.pdf
CY7C1324H-133AXC
Hersteller: Infineon Technologies
Description: IC SRAM 2MBIT PARALLEL 100TQFP
auf Bestellung 127 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
57+8.87 EUR
Mindestbestellmenge: 57
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CY7C1320SV18-250BZC
CY7C1320SV18-250BZC
Hersteller: Infineon Technologies
Description: IC SRAM 18MBIT PAR 165FBGA
auf Bestellung 883 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+66.88 EUR
Mindestbestellmenge: 8
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CY7C1320CV18-250BZXC CY7C1318CV18%2C%20CY7C1320CV18.pdf
CY7C1320CV18-250BZXC
Hersteller: Infineon Technologies
Description: IC SRAM 18MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, DDR II
Clock Frequency: 250 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 512K x 36
DigiKey Programmable: Not Verified
auf Bestellung 87 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+69.31 EUR
10+64.27 EUR
25+61.98 EUR
40+60.43 EUR
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IPB65R150CFDATMA2 Infineon-IPX65R150CFD-DS-v02_00-en.pdf?fileId=db3a3043338c8ac80133ace218433063
IPB65R150CFDATMA2
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 22.4A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22.4A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 9.3A, 10V
Power Dissipation (Max): 195.3W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 900µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2340 pF @ 100 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1000+2.74 EUR
Mindestbestellmenge: 1000
Im Einkaufswagen  Stück im Wert von  UAH
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