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CY9AF111NAPF-G-JNE1 CY9AF111NAPF-G-JNE1 Infineon Technologies Infineon-CY9A110A_CY9A110_Series_32_Bit_Arm_Cortex_M3_FM3_Microcontroller-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eddff4562bb&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fil Description: IC MCU 32BIT 64KB FLASH 100QFP
Packaging: Tray
Package / Case: 100-BQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 16x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, EBI/EMI, I2C, LINbus, SPI, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 100-QFP (14x20)
Part Status: Active
Number of I/O: 83
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY96F348ASBPMC-GS-UJE2 CY96F348ASBPMC-GS-UJE2 Infineon Technologies Infineon-CY96345_346_CY96F345_CY96F346_F347_F348_F2MC-16FX_CY96340_Series_16-bit_Proprietary_Microcontroller_Datasheet-AdditionalTechnicalInformation-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0edcaffb60a9 Description: IC MCU 16BIT 544KB FLASH 100LQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 56MHz
Program Memory Size: 544KB (544K x 8)
RAM Size: 24K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: F²MC-16FX
Data Converters: A/D 24x10b SAR
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I²C, LINbus, SCI, UART/USART
Peripherals: DMA, LVD, LVR, POR, PWM, WDT
Supplier Device Package: 100-LQFP (14x14)
Part Status: Obsolete
Number of I/O: 82
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY96F347ASBPMC-GS-UJE2 CY96F347ASBPMC-GS-UJE2 Infineon Technologies Infineon-CY96345_346_CY96F345_CY96F346_F347_F348_F2MC-16FX_CY96340_Series_16-bit_Proprietary_Microcontroller_Datasheet-AdditionalTechnicalInformation-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0edcaffb60a9 Description: IC MCU 16BIT 416KB FLASH 100LQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 56MHz
Program Memory Size: 416KB (416K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: F²MC-16FX
Data Converters: A/D 24x10b SAR
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I²C, LINbus, SCI, UART/USART
Peripherals: DMA, LVD, LVR, POR, PWM, WDT
Supplier Device Package: 100-LQFP (14x14)
Part Status: Obsolete
Number of I/O: 82
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY96F348RSBPMC-GS-UJE2 CY96F348RSBPMC-GS-UJE2 Infineon Technologies Infineon-CY96345_346_CY96F345_CY96F346_F347_F348_F2MC-16FX_CY96340_Series_16-bit_Proprietary_Microcontroller_Datasheet-AdditionalTechnicalInformation-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0edcaffb60a9&utm_source=cypress&ut Description: IC MCU 16BIT 544KB FLASH 100LQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 56MHz
Program Memory Size: 544KB (544K x 8)
RAM Size: 24K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: F²MC-16FX
Data Converters: A/D 24x10b SAR
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I2C, LINbus, SCI, UART/USART
Peripherals: DMA, LVD, LVR, POR, PWM, WDT
Supplier Device Package: 100-LQFP (14x14)
Part Status: Obsolete
Number of I/O: 82
DigiKey Programmable: Not Verified
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CY9AF112KQN-G-AVE2 CY9AF112KQN-G-AVE2 Infineon Technologies download Description: IC MCU 32BIT 160KB FLASH 48QFN
Packaging: Tray
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 160KB (160K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 8x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 48-QFN (7x7)
Part Status: Active
Number of I/O: 36
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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S25FL512SDPMFIG13 S25FL512SDPMFIG13 Infineon Technologies infineon-s25fl512s-512-mb-64-mb-fl-s-flash-spi-multi-i-o-3-datasheet-cn.pdf Description: IC FLASH 512MBIT SPI/QUAD 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 66 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Part Status: Active
Memory Interface: SPI - Quad I/O
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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S25FL512SDPMFV011 S25FL512SDPMFV011 Infineon Technologies Infineon-S25FL512S_512_Mb_(64_MB)_3.0_V_SPI_Flash_Memory-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed046ae4b53&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC FLASH 512MBIT SPI/QUAD 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 66 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Part Status: Active
Memory Interface: SPI - Quad I/O
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
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S25FL512SDPMFI013 S25FL512SDPMFI013 Infineon Technologies infineon-s25fl512s-512-mb-64-mb-fl-s-flash-spi-multi-i-o-3-datasheet-cn.pdf Description: IC FLASH 512MBIT SPI/QUAD 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 66 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Part Status: Active
Memory Interface: SPI - Quad I/O
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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S25FL512SDPMFV013 S25FL512SDPMFV013 Infineon Technologies infineon-s25fl512s-512-mb-64-mb-fl-s-flash-spi-multi-i-o-3-datasheet-cn.pdf Description: IC FLASH 512MBIT SPI/QUAD 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 66 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Part Status: Active
Memory Interface: SPI - Quad I/O
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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S25FL512SDPMFVG13 S25FL512SDPMFVG13 Infineon Technologies infineon-s25fl512s-512-mb-64-mb-fl-s-flash-spi-multi-i-o-3-datasheet-en.pdf Description: IC FLASH 512MBIT SPI/QUAD 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 66 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Part Status: Active
Memory Interface: SPI - Quad I/O
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
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IKB03N120H2ATMA1 IKB03N120H2ATMA1 Infineon Technologies IKB03N120H2_Rev2_3.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42854753dcf Description: IGBT 1200V 9.6A TO263-3-2
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 42 ns
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 3A
Supplier Device Package: PG-TO263-3-2
Td (on/off) @ 25°C: 9.2ns/281ns
Switching Energy: 290µJ
Test Condition: 800V, 3A, 82Ohm, 15V
Gate Charge: 22 nC
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 9.6 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 9.9 A
Power - Max: 62.5 W
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IGB03N120H2ATMA1 IGB03N120H2ATMA1 Infineon Technologies IGB03N120H2_Rev2_4G.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b427af0c3c99 Description: IGBT 1200V 9.6A 62.5W TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 3A
Supplier Device Package: PG-TO263-3-2
Td (on/off) @ 25°C: 9.2ns/281ns
Switching Energy: 290µJ
Test Condition: 800V, 3A, 82Ohm, 15V
Gate Charge: 22 nC
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 9.6 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 9.9 A
Power - Max: 62.5 W
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IKW30N60H3FKSA1 IKW30N60H3FKSA1 Infineon Technologies infineon-ikw30n60h3-datasheet-cn.pdf Description: IGBT TRENCH FS 600V 60A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 38 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 30A
Supplier Device Package: PG-TO247-3-1
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 21ns/207ns
Switching Energy: 1.38mJ
Test Condition: 400V, 30A, 10.5Ohm, 15V
Gate Charge: 165 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 187 W
Produkt ist nicht verfügbar
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IRSM836-035MB IRSM836-035MB Infineon Technologies irsm836-035mb.pdf Description: IC MTR DRIVER 13.5V-16.5V 27PQFN
Packaging: Tray
Package / Case: 31-PowerVQFN
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 3A
Interface: Parallel
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 13.5V ~ 16.5V
Applications: Appliance
Technology: UMOS
Voltage - Load: 400V (Max)
Supplier Device Package: 27-PQFN (12x12)
Motor Type - AC, DC: AC, Synchronous
Part Status: Active
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2+18.02 EUR
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25+13.03 EUR
160+11.65 EUR
320+11.29 EUR
640+11.01 EUR
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FF450R12ME4BDLA1 Infineon Technologies Description: FF450R12 - IGBT Module
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 450A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONOD-3-2
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 450 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 28 nF @ 25 V
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FF300R17KE3HDLA1 Infineon Technologies Description: MEDIUM POWER 62MM
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 300A
NTC Thermistor: No
Supplier Device Package: AG-62MMHB
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 404 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 1450 W
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 27 nF @ 25 V
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FT150R12KE3GB4BDLA1 Infineon Technologies Description: IGBT MOD 1200V 200A 700W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 3 Independent
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 150A
NTC Thermistor: No
Supplier Device Package: Module
Part Status: Active
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 700 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 10.5 nF @ 25 V
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BSM100GD60DLCBDLA1 Infineon Technologies Description: IGBT MOD 600V 130A 430W MOD
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: Module
Part Status: Obsolete
Current - Collector (Ic) (Max): 130 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 430 W
Current - Collector Cutoff (Max): 500 µA
Input Capacitance (Cies) @ Vce: 4.3 nF @ 25 V
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D841S45TS01XDLA1 D841S45TS01XDLA1 Infineon Technologies Description: DIODE GP 4.5KV 1080A D7514-1
Packaging: Bulk
Package / Case: DO-200AC, K-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1080A
Supplier Device Package: BG-D7514-1
Operating Temperature - Junction: 125°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 4500 V
Voltage - Forward (Vf) (Max) @ If: 3.5 V @ 2500 A
Current - Reverse Leakage @ Vr: 140 mA @ 4500 V
Produkt ist nicht verfügbar
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DF450R17N2E4PB11BDLA1 Infineon Technologies Description: MODULE
Packaging: Bulk
Part Status: Last Time Buy
Produkt ist nicht verfügbar
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IPW60R045CPFKSA1 IPW60R045CPFKSA1 Infineon Technologies infineon-ipw60r045cp-datasheet-en.pdf Description: MOSFET N-CH 650V 60A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 44A, 10V
Power Dissipation (Max): 431W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 3mA
Supplier Device Package: PG-TO247-3-1
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 100 V
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IPW60R037P7XKSA1 IPW60R037P7XKSA1 Infineon Technologies Infineon-IPW60R037P7-DS-v02_01-EN.pdf?fileId=5546d46259d9a4bf015a5bb7bab83ca7 Description: MOSFET N-CH 650V 76A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 76A (Tc)
Rds On (Max) @ Id, Vgs: 37mOhm @ 29.5A, 10V
Power Dissipation (Max): 255W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.48mA
Supplier Device Package: PG-TO247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5243 pF @ 400 V
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IPW60R125C6FKSA1 IPW60R125C6FKSA1 Infineon Technologies Infineon-IPx60R125C6-DS-v02_03-EN.pdf?fileId=db3a30432313ff5e01235b1ae8fc4910 Description: MOSFET N-CH 600V 30A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 14.5A, 10V
Power Dissipation (Max): 219W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 960µA
Supplier Device Package: PG-TO247-3-1
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2127 pF @ 100 V
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IPW60R031CFD7XKSA1 IPW60R031CFD7XKSA1 Infineon Technologies Infineon-IPW60R031CFD7-DS-v02_00-EN.pdf?fileId=5546d4625e763904015ea44f315531e2 Description: MOSFET N-CH 650V 63A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 63A (Tc)
Rds On (Max) @ Id, Vgs: 31mOhm @ 32.6A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.63mA
Supplier Device Package: PG-TO247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 141 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5623 pF @ 400 V
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IPW60R017C7XKSA1 IPW60R017C7XKSA1 Infineon Technologies Infineon-IPW60R017C7-DS-v02_00-EN.pdf?fileId=5546d46253a864fe0153cc8319e77eb8 Description: HIGH POWER_NEW
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 109A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 58.2A, 10V
Power Dissipation (Max): 446W (Tc)
Vgs(th) (Max) @ Id: 4V @ 2.91mA
Supplier Device Package: PG-TO247-3-41
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9890 pF @ 400 V
auf Bestellung 1286 Stücke:
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120+22.22 EUR
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IPW60R070P6XKSA1 IPW60R070P6XKSA1 Infineon Technologies Infineon-IPW60R070P6-DS-v02_00-en.pdf?fileId=5546d461464245d3014694ab3f43692e Description: MOSFET N-CH 600V 53.5A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 53.5A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 20.6A, 10V
Power Dissipation (Max): 391W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.72mA
Supplier Device Package: PG-TO247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4750 pF @ 100 V
auf Bestellung 416 Stücke:
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IPW60R170CFD7XKSA1 IPW60R170CFD7XKSA1 Infineon Technologies Infineon-IPW60R170CFD7-DS-v02_00-EN.pdf?fileId=5546d4625e763904015ea46190b731e6 Description: MOSFET N-CH 650V 14A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 6A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 300µA
Supplier Device Package: PG-TO247-3-21
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1199 pF @ 400 V
auf Bestellung 105 Stücke:
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IPW60R055CFD7XKSA1 IPW60R055CFD7XKSA1 Infineon Technologies Infineon-MOSFET_CoolMOS_CFD7_600V-PB-v01_00-EN.pdf?fileId=5546d4625f96303e015fdd5758e81db7 Description: MOSFET N-CH 600V 38A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 18A, 10V
Power Dissipation (Max): 178W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 900µA
Supplier Device Package: PG-TO247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3194 pF @ 400 V
Produkt ist nicht verfügbar
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IPW60R090CFD7XKSA1 IPW60R090CFD7XKSA1 Infineon Technologies infineon-ipw60r090cfd7-datasheet-en.pdf Description: MOSFET N-CH 600V 25A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 11.4A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 570µA
Supplier Device Package: PG-TO247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2103 pF @ 400 V
auf Bestellung 215 Stücke:
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IPW60R045CPAFKSA1 IPW60R045CPAFKSA1 Infineon Technologies infineon-ipw60r045cpa-datasheet-en.pdf Description: MOSFET N-CH 600V 60A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 44A, 10V
Power Dissipation (Max): 431W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 3mA
Supplier Device Package: PG-TO247-3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 100 V
Qualification: AEC-Q101
auf Bestellung 329 Stücke:
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30+21.5 EUR
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IPW60R125CFD7XKSA1 IPW60R125CFD7XKSA1 Infineon Technologies Infineon-IPW60R125CFD7-DS-v02_00-EN.pdf?fileId=5546d46261ff57770162002fa4562bb2 Description: MOSFET N-CH 600V 18A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 7.8A, 10V
Power Dissipation (Max): 92W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 390µA
Supplier Device Package: PG-TO247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1503 pF @ 400 V
auf Bestellung 40 Stücke:
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2+10.72 EUR
30+6.03 EUR
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IPW60R037CSFDXKSA1 IPW60R037CSFDXKSA1 Infineon Technologies Infineon-IPW60R037CSFD-DS-v02_00-EN.pdf?fileId=5546d46268554f4a016894b0464868d4 Description: MOSFET N CH
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
Rds On (Max) @ Id, Vgs: 37mOhm @ 32.6A, 10V
Power Dissipation (Max): 245W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.63mA
Supplier Device Package: PG-TO247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 136 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5623 pF @ 400 V
auf Bestellung 328 Stücke:
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30+12.39 EUR
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IPW60R040CFD7XKSA1 IPW60R040CFD7XKSA1 Infineon Technologies infineon-ipw60r040cfd7-datasheet-cn.pdf Description: MOSFET N-CH 600V 50A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 24.9A, 10V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.25mA
Supplier Device Package: PG-TO247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 109 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4354 pF @ 400 V
auf Bestellung 250 Stücke:
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2+19.6 EUR
30+11.58 EUR
60+10.63 EUR
120+9.82 EUR
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IPW60R080P7XKSA1 IPW60R080P7XKSA1 Infineon Technologies infineon-ipw60r080p7-datasheet-en.pdf Description: MOSFET N-CH 600V 37A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 11.8A, 10V
Power Dissipation (Max): 129W (Tc)
Vgs(th) (Max) @ Id: 4V @ 590µA
Supplier Device Package: PG-TO247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2180 pF @ 400 V
auf Bestellung 9665 Stücke:
Lieferzeit 10-14 Tag (e)
2+13.14 EUR
30+7.51 EUR
60+6.83 EUR
120+6.27 EUR
510+5.37 EUR
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IPW60R105CFD7XKSA1 IPW60R105CFD7XKSA1 Infineon Technologies Infineon-IPW60R105CFD7-DS-v02_00-EN.pdf?fileId=5546d46262b31d2e01633f162a544e05 Description: MOSFET N-CH 600V 21A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 9.3A, 10V
Power Dissipation (Max): 106W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 470µA
Supplier Device Package: PG-TO247-3-41
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1752 pF @ 400 V
auf Bestellung 4 Stücke:
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2+11.06 EUR
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IPW60R099P7XKSA1 IPW60R099P7XKSA1 Infineon Technologies Infineon-IPW60R099P7-DS-v02_00-EN.pdf?fileId=5546d4625b10283a015b1f57c16d03d0 Description: MOSFET N-CH 600V 31A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 10.5A, 10V
Power Dissipation (Max): 117W (Tc)
Vgs(th) (Max) @ Id: 4V @ 530µA
Supplier Device Package: PG-TO247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1952 pF @ 400 V
auf Bestellung 446 Stücke:
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2+10.78 EUR
30+6.07 EUR
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IPW60R145CFD7XKSA1 IPW60R145CFD7XKSA1 Infineon Technologies Infineon-MOSFET_CoolMOS_CFD7_600V-PB-v01_00-EN.pdf?fileId=5546d4625f96303e015fdd5758e81db7 Description: MOSFET N-CH 600V 16A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 145mOhm @ 6.8A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 4V @ 340µA
Supplier Device Package: PG-TO247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1330 pF @ 400 V
Produkt ist nicht verfügbar
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IPW60R070C6FKSA1 IPW60R070C6FKSA1 Infineon Technologies infineon-ipw60r070c6-datasheet-en.pdf Description: MOSFET N-CH 600V 53A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 53A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 25.8A, 10V
Power Dissipation (Max): 391W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1.72mA
Supplier Device Package: PG-TO247-3-1
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 100 V
auf Bestellung 79 Stücke:
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2+18.46 EUR
30+10.84 EUR
60+9.94 EUR
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IPW60R099CPFKSA1 IPW60R099CPFKSA1 Infineon Technologies infineon-ipw60r099cp-datasheet-en.pdf Description: MOSFET N-CH 650V 31A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 18A, 10V
Power Dissipation (Max): 255W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1.2mA
Supplier Device Package: PG-TO247-3-1
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 100 V
Produkt ist nicht verfügbar
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IPW60R099C7XKSA1 IPW60R099C7XKSA1 Infineon Technologies Infineon-IPW60R099C7-DS-v02_00-EN.pdf?fileId=5546d4624cb7f111014d4c8a42de3ffe Description: MOSFET N-CH 600V 14A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 9.7A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 490µA
Supplier Device Package: PG-TO247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1819 pF @ 400 V
auf Bestellung 239 Stücke:
Lieferzeit 10-14 Tag (e)
2+13.14 EUR
30+7.51 EUR
60+6.84 EUR
120+6.27 EUR
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IPW60R070CFD7XKSA1 IPW60R070CFD7XKSA1 Infineon Technologies infineon-ipw60r070cfd7-datasheet-cn.pdf Description: MOSFET N-CH 650V 31A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 15.1A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 760µA
Supplier Device Package: PG-TO247-3-21
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2721 pF @ 400 V
auf Bestellung 1630 Stücke:
Lieferzeit 10-14 Tag (e)
2+14.6 EUR
30+8.43 EUR
60+7.69 EUR
120+7.07 EUR
510+6.07 EUR
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S6BP203A8FST2B000 S6BP203A8FST2B000 Infineon Technologies infineon-s6bp203a-assp-42v-2.4a-synchronous-buck-boost-dc-dc-converter-ic-datasheet-ja.pdf Description: IC REG BCK BST 3.3V 2.4A 16TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.173", 4.40mm Width) Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Up/Step-Down
Current - Output: 2.4A
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Positive
Frequency - Switching: 200kHz ~ 2.1MHz
Voltage - Input (Max): 42V
Topology: Buck-Boost
Supplier Device Package: 16-TSSOP
Synchronous Rectifier: Yes
Voltage - Input (Min): 2.5V
Voltage - Output (Min/Fixed): 3.3V
Grade: Automotive
Part Status: Obsolete
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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S6BP203A8FST2B000 S6BP203A8FST2B000 Infineon Technologies infineon-s6bp203a-assp-42v-2.4a-synchronous-buck-boost-dc-dc-converter-ic-datasheet-ja.pdf Description: IC REG BCK BST 3.3V 2.4A 16TSSOP
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.173", 4.40mm Width) Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Up/Step-Down
Current - Output: 2.4A
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Positive
Frequency - Switching: 200kHz ~ 2.1MHz
Voltage - Input (Max): 42V
Topology: Buck-Boost
Supplier Device Package: 16-TSSOP
Synchronous Rectifier: Yes
Voltage - Input (Min): 2.5V
Voltage - Output (Min/Fixed): 3.3V
Grade: Automotive
Part Status: Obsolete
Qualification: AEC-Q100
auf Bestellung 3964 Stücke:
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2+15.73 EUR
10+12.19 EUR
25+11.3 EUR
100+10.33 EUR
250+9.87 EUR
500+9.59 EUR
1000+9.37 EUR
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MB39C006APN-G-AMEFE1 MB39C006APN-G-AMEFE1 Infineon Technologies Description: IC REG BUCK ADJ 800MA 10SON
Packaging: Tape & Reel (TR)
Package / Case: 10-WFDFN Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 800mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 2MHz, 3.2MHz
Voltage - Input (Max): 5.5V
Topology: Buck
Supplier Device Package: 10-SON (3x3)
Synchronous Rectifier: Yes
Voltage - Output (Max): 3.564V
Voltage - Input (Min): 2.5V
Voltage - Output (Min/Fixed): 0.446V
Part Status: Obsolete
Produkt ist nicht verfügbar
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MB39C006APN-G-AMEFE1 MB39C006APN-G-AMEFE1 Infineon Technologies Description: IC REG BUCK ADJ 800MA 10SON
Packaging: Cut Tape (CT)
Package / Case: 10-WFDFN Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 800mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 2MHz, 3.2MHz
Voltage - Input (Max): 5.5V
Topology: Buck
Supplier Device Package: 10-SON (3x3)
Synchronous Rectifier: Yes
Voltage - Output (Max): 3.564V
Voltage - Input (Min): 2.5V
Voltage - Output (Min/Fixed): 0.446V
Part Status: Obsolete
auf Bestellung 2999 Stücke:
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10+2.53 EUR
25+2.3 EUR
100+2.05 EUR
250+1.93 EUR
500+1.86 EUR
1000+1.8 EUR
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MB39C014PN-G-K1EFE1 MB39C014PN-G-K1EFE1 Infineon Technologies Description: IC REG BUCK ADJ 800MA 10SON
Packaging: Tape & Reel (TR)
Package / Case: 10-WFDFN Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 800mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 2MHz, 3.2MHz
Voltage - Input (Max): 5.5V
Topology: Buck
Supplier Device Package: 10-SON (3x3)
Synchronous Rectifier: Yes
Voltage - Output (Max): 3.564V
Voltage - Input (Min): 2.5V
Voltage - Output (Min/Fixed): 0.446V
Part Status: Obsolete
Produkt ist nicht verfügbar
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MB39C014PN-G-K1EFE1 MB39C014PN-G-K1EFE1 Infineon Technologies Description: IC REG BUCK ADJ 800MA 10SON
Packaging: Cut Tape (CT)
Package / Case: 10-WFDFN Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 800mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 2MHz, 3.2MHz
Voltage - Input (Max): 5.5V
Topology: Buck
Supplier Device Package: 10-SON (3x3)
Synchronous Rectifier: Yes
Voltage - Output (Max): 3.564V
Voltage - Input (Min): 2.5V
Voltage - Output (Min/Fixed): 0.446V
Part Status: Obsolete
Produkt ist nicht verfügbar
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DDB6U85N16LHOSA1 DDB6U85N16LHOSA1 Infineon Technologies Infineon-DDB6U85N16L-DS-v02_00-en_de.pdf?fileId=db3a304412b407950112b43147c453fb Description: DIODE MODULE GP 1600V AGISOPACK1
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 3 Independent
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: AG-ISOPACK-1
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.44 V @ 100 A
Current - Reverse Leakage @ Vr: 5 mA @ 1600 V
Produkt ist nicht verfügbar
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DDB6U215N16LHOSA1 DDB6U215N16LHOSA1 Infineon Technologies Infineon-DDB6U215N16L-DS-v01_01-en_de.pdf?fileId=db3a304412b407950112b431505f5407 Description: DIODE MODULE GP 1600V
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 3 Independent
Supplier Device Package: Module
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.61 V @ 300 A
Current - Reverse Leakage @ Vr: 10 mA @ 1600 V
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DDB6U104N18RRBOSA1 Infineon Technologies Infineon+-+Brochure+-+Solutions+for+Wind+Energy+Systems.pdf?fileId=db3a30433f9a93b7013f9f2973c01ed6 Description: LOW POWER ECONO
Packaging: Bulk
Part Status: Active
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DDB6U134N16RRB80BPSA1 DDB6U134N16RRB80BPSA1 Infineon Technologies Infineon-DDB6U134N16RR-DS-v01_01-de.pdf?fileId=db3a304412b407950112b433eac35e2a Description: IGBT MODULE 1200V 70A AG-ECONO2B
Packaging: Tray
Part Status: Active
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DDB6U50N22W1RPB11BPSA1 DDB6U50N22W1RPB11BPSA1 Infineon Technologies Infineon-DDB6U50N22W1RP_B11-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c850f4bee018582bb8f2e1958 Description: EASY BRIDGE MODULE
Packaging: Tray
Part Status: Active
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DDB6U75N16W1RBOMA1 DDB6U75N16W1RBOMA1 Infineon Technologies Infineon-DDB6U75N16W1R-DS-v02_00-en_de.pdf?fileId=db3a30432239cccd0122f436495e5657 Description: IGBT MOD 1200V 69A 335W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: Module
Part Status: Active
Current - Collector (Ic) (Max): 69 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 335 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 2.8 nF @ 25 V
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DDB6U180N16RRPB11BPSA1 DDB6U180N16RRPB11BPSA1 Infineon Technologies Infineon-DDB6U180N16RR_B11-DS-v03_00-EN.pdf?fileId=5546d462518ffd8501524095699c70bc Description: IGBT MOD 1200V 140A AG-ECONO2B
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Chopper
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: AG-ECONO2B
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 140 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 515 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 6.3 nF @ 25 V
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DDB6U25N16VRBOMA1 Infineon Technologies EUPCS02448-1.pdf?t.download=true&u=5oefqw Description: IGBT MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter with Brake
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 15A
NTC Thermistor: Yes
Supplier Device Package: Module
Part Status: Active
Voltage - Collector Emitter Breakdown (Max): 1600 V
Power - Max: 86 W
Current - Collector Cutoff (Max): 1 mA
Produkt ist nicht verfügbar
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DDB6U180N16RRPB37BPSA1 DDB6U180N16RRPB37BPSA1 Infineon Technologies Infineon-DDB6U180N16RRP_B37-DS-v03_00-EN.pdf?fileId=5546d4625d5945ed015d7f3f7bd50895 Description: BRIDGE RECT 3P 1.6KV 50A ECONO27
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: AG-ECONO2-7
Part Status: Active
Voltage - Peak Reverse (Max): 1.6 kV
Current - Average Rectified (Io): 50 A
Voltage - Forward (Vf) (Max) @ If: 2.15 V @ 50 A
Current - Reverse Leakage @ Vr: 1 mA @ 1600 V
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DDB6U180N16RRBPSA1 Infineon Technologies Description: IGBT MODULE
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
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DDB6U134N16RRB38BPSA1 Infineon Technologies Description: LOW POWER ECONO
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Chopper
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.75V @ 15V, 70A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO2B
Part Status: Active
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 500 W
Current - Collector Cutoff (Max): 500 µA
Input Capacitance (Cies) @ Vce: 5.1 nF @ 25 V
Produkt ist nicht verfügbar
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DDB6U75N16W1RB11BOMA1 DDB6U75N16W1RB11BOMA1 Infineon Technologies Infineon-DDB6U75N16W1R_B11-DS-v02_00-en_de.pdf?fileId=db3a30432ad629a6012af124a1255e01 Description: IGBT MOD 1200V 69A 335W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 69 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 335 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 2.8 nF @ 25 V
Produkt ist nicht verfügbar
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DDB6U104N16RRPB37BPSA1 DDB6U104N16RRPB37BPSA1 Infineon Technologies Infineon-DDB6U104N16RRP_B37-DS-v03_00-EN.pdf?fileId=5546d4625b3ca4ec015b5745f6760280 Description: BRIDGE RECT 3P 1.6KV 35A ECONO27
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: AG-ECONO2-7
Part Status: Active
Voltage - Peak Reverse (Max): 1.6 kV
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 2.15 V @ 35 A
Current - Reverse Leakage @ Vr: 5 mA @ 1600 V
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1+130.02 EUR
10+99.81 EUR
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CY9AF111NAPF-G-JNE1 Infineon-CY9A110A_CY9A110_Series_32_Bit_Arm_Cortex_M3_FM3_Microcontroller-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eddff4562bb&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fil
CY9AF111NAPF-G-JNE1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 64KB FLASH 100QFP
Packaging: Tray
Package / Case: 100-BQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 16x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, EBI/EMI, I2C, LINbus, SPI, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 100-QFP (14x20)
Part Status: Active
Number of I/O: 83
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY96F348ASBPMC-GS-UJE2 Infineon-CY96345_346_CY96F345_CY96F346_F347_F348_F2MC-16FX_CY96340_Series_16-bit_Proprietary_Microcontroller_Datasheet-AdditionalTechnicalInformation-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0edcaffb60a9
CY96F348ASBPMC-GS-UJE2
Hersteller: Infineon Technologies
Description: IC MCU 16BIT 544KB FLASH 100LQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 56MHz
Program Memory Size: 544KB (544K x 8)
RAM Size: 24K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: F²MC-16FX
Data Converters: A/D 24x10b SAR
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I²C, LINbus, SCI, UART/USART
Peripherals: DMA, LVD, LVR, POR, PWM, WDT
Supplier Device Package: 100-LQFP (14x14)
Part Status: Obsolete
Number of I/O: 82
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY96F347ASBPMC-GS-UJE2 Infineon-CY96345_346_CY96F345_CY96F346_F347_F348_F2MC-16FX_CY96340_Series_16-bit_Proprietary_Microcontroller_Datasheet-AdditionalTechnicalInformation-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0edcaffb60a9
CY96F347ASBPMC-GS-UJE2
Hersteller: Infineon Technologies
Description: IC MCU 16BIT 416KB FLASH 100LQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 56MHz
Program Memory Size: 416KB (416K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: F²MC-16FX
Data Converters: A/D 24x10b SAR
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I²C, LINbus, SCI, UART/USART
Peripherals: DMA, LVD, LVR, POR, PWM, WDT
Supplier Device Package: 100-LQFP (14x14)
Part Status: Obsolete
Number of I/O: 82
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY96F348RSBPMC-GS-UJE2 Infineon-CY96345_346_CY96F345_CY96F346_F347_F348_F2MC-16FX_CY96340_Series_16-bit_Proprietary_Microcontroller_Datasheet-AdditionalTechnicalInformation-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0edcaffb60a9&utm_source=cypress&ut
CY96F348RSBPMC-GS-UJE2
Hersteller: Infineon Technologies
Description: IC MCU 16BIT 544KB FLASH 100LQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 56MHz
Program Memory Size: 544KB (544K x 8)
RAM Size: 24K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: F²MC-16FX
Data Converters: A/D 24x10b SAR
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I2C, LINbus, SCI, UART/USART
Peripherals: DMA, LVD, LVR, POR, PWM, WDT
Supplier Device Package: 100-LQFP (14x14)
Part Status: Obsolete
Number of I/O: 82
DigiKey Programmable: Not Verified
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AnzahlPrivatkunde
1+121.95 EUR
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CY9AF112KQN-G-AVE2 download
CY9AF112KQN-G-AVE2
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 160KB FLASH 48QFN
Packaging: Tray
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 160KB (160K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 8x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 48-QFN (7x7)
Part Status: Active
Number of I/O: 36
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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S25FL512SDPMFIG13 infineon-s25fl512s-512-mb-64-mb-fl-s-flash-spi-multi-i-o-3-datasheet-cn.pdf
S25FL512SDPMFIG13
Hersteller: Infineon Technologies
Description: IC FLASH 512MBIT SPI/QUAD 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 66 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Part Status: Active
Memory Interface: SPI - Quad I/O
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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S25FL512SDPMFV011 Infineon-S25FL512S_512_Mb_(64_MB)_3.0_V_SPI_Flash_Memory-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed046ae4b53&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
S25FL512SDPMFV011
Hersteller: Infineon Technologies
Description: IC FLASH 512MBIT SPI/QUAD 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 66 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Part Status: Active
Memory Interface: SPI - Quad I/O
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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S25FL512SDPMFI013 infineon-s25fl512s-512-mb-64-mb-fl-s-flash-spi-multi-i-o-3-datasheet-cn.pdf
S25FL512SDPMFI013
Hersteller: Infineon Technologies
Description: IC FLASH 512MBIT SPI/QUAD 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 66 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Part Status: Active
Memory Interface: SPI - Quad I/O
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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S25FL512SDPMFV013 infineon-s25fl512s-512-mb-64-mb-fl-s-flash-spi-multi-i-o-3-datasheet-cn.pdf
S25FL512SDPMFV013
Hersteller: Infineon Technologies
Description: IC FLASH 512MBIT SPI/QUAD 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 66 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Part Status: Active
Memory Interface: SPI - Quad I/O
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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S25FL512SDPMFVG13 infineon-s25fl512s-512-mb-64-mb-fl-s-flash-spi-multi-i-o-3-datasheet-en.pdf
S25FL512SDPMFVG13
Hersteller: Infineon Technologies
Description: IC FLASH 512MBIT SPI/QUAD 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 66 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Part Status: Active
Memory Interface: SPI - Quad I/O
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Mindestbestellmenge: 1450 Stücke
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IKB03N120H2ATMA1 IKB03N120H2_Rev2_3.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42854753dcf
IKB03N120H2ATMA1
Hersteller: Infineon Technologies
Description: IGBT 1200V 9.6A TO263-3-2
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 42 ns
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 3A
Supplier Device Package: PG-TO263-3-2
Td (on/off) @ 25°C: 9.2ns/281ns
Switching Energy: 290µJ
Test Condition: 800V, 3A, 82Ohm, 15V
Gate Charge: 22 nC
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 9.6 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 9.9 A
Power - Max: 62.5 W
Produkt ist nicht verfügbar
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IGB03N120H2ATMA1 IGB03N120H2_Rev2_4G.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b427af0c3c99
IGB03N120H2ATMA1
Hersteller: Infineon Technologies
Description: IGBT 1200V 9.6A 62.5W TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 3A
Supplier Device Package: PG-TO263-3-2
Td (on/off) @ 25°C: 9.2ns/281ns
Switching Energy: 290µJ
Test Condition: 800V, 3A, 82Ohm, 15V
Gate Charge: 22 nC
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 9.6 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 9.9 A
Power - Max: 62.5 W
Produkt ist nicht verfügbar
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IKW30N60H3FKSA1 infineon-ikw30n60h3-datasheet-cn.pdf
IKW30N60H3FKSA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 600V 60A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 38 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 30A
Supplier Device Package: PG-TO247-3-1
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 21ns/207ns
Switching Energy: 1.38mJ
Test Condition: 400V, 30A, 10.5Ohm, 15V
Gate Charge: 165 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 187 W
Produkt ist nicht verfügbar
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IRSM836-035MB irsm836-035mb.pdf
IRSM836-035MB
Hersteller: Infineon Technologies
Description: IC MTR DRIVER 13.5V-16.5V 27PQFN
Packaging: Tray
Package / Case: 31-PowerVQFN
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 3A
Interface: Parallel
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 13.5V ~ 16.5V
Applications: Appliance
Technology: UMOS
Voltage - Load: 400V (Max)
Supplier Device Package: 27-PQFN (12x12)
Motor Type - AC, DC: AC, Synchronous
Part Status: Active
auf Bestellung 660 Stücke:
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AnzahlPrivatkunde
2+18.02 EUR
10+14.02 EUR
25+13.03 EUR
160+11.65 EUR
320+11.29 EUR
640+11.01 EUR
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FF450R12ME4BDLA1
Hersteller: Infineon Technologies
Description: FF450R12 - IGBT Module
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 450A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONOD-3-2
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 450 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 28 nF @ 25 V
Produkt ist nicht verfügbar
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FF300R17KE3HDLA1
Hersteller: Infineon Technologies
Description: MEDIUM POWER 62MM
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 300A
NTC Thermistor: No
Supplier Device Package: AG-62MMHB
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 404 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 1450 W
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 27 nF @ 25 V
Produkt ist nicht verfügbar
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FT150R12KE3GB4BDLA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 200A 700W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 3 Independent
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 150A
NTC Thermistor: No
Supplier Device Package: Module
Part Status: Active
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 700 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 10.5 nF @ 25 V
Produkt ist nicht verfügbar
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BSM100GD60DLCBDLA1
Hersteller: Infineon Technologies
Description: IGBT MOD 600V 130A 430W MOD
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: Module
Part Status: Obsolete
Current - Collector (Ic) (Max): 130 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 430 W
Current - Collector Cutoff (Max): 500 µA
Input Capacitance (Cies) @ Vce: 4.3 nF @ 25 V
Produkt ist nicht verfügbar
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D841S45TS01XDLA1
D841S45TS01XDLA1
Hersteller: Infineon Technologies
Description: DIODE GP 4.5KV 1080A D7514-1
Packaging: Bulk
Package / Case: DO-200AC, K-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1080A
Supplier Device Package: BG-D7514-1
Operating Temperature - Junction: 125°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 4500 V
Voltage - Forward (Vf) (Max) @ If: 3.5 V @ 2500 A
Current - Reverse Leakage @ Vr: 140 mA @ 4500 V
Produkt ist nicht verfügbar
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DF450R17N2E4PB11BDLA1
Hersteller: Infineon Technologies
Description: MODULE
Packaging: Bulk
Part Status: Last Time Buy
Produkt ist nicht verfügbar
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IPW60R045CPFKSA1 infineon-ipw60r045cp-datasheet-en.pdf
IPW60R045CPFKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 60A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 44A, 10V
Power Dissipation (Max): 431W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 3mA
Supplier Device Package: PG-TO247-3-1
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 100 V
auf Bestellung 1851 Stücke:
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AnzahlPrivatkunde
1+32.32 EUR
30+19.93 EUR
60+18.47 EUR
120+17.23 EUR
510+16.09 EUR
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IPW60R037P7XKSA1 Infineon-IPW60R037P7-DS-v02_01-EN.pdf?fileId=5546d46259d9a4bf015a5bb7bab83ca7
IPW60R037P7XKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 76A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 76A (Tc)
Rds On (Max) @ Id, Vgs: 37mOhm @ 29.5A, 10V
Power Dissipation (Max): 255W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.48mA
Supplier Device Package: PG-TO247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5243 pF @ 400 V
auf Bestellung 5721 Stücke:
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AnzahlPrivatkunde
2+19.73 EUR
30+11.67 EUR
60+10.71 EUR
120+9.9 EUR
510+8.62 EUR
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IPW60R125C6FKSA1 Infineon-IPx60R125C6-DS-v02_03-EN.pdf?fileId=db3a30432313ff5e01235b1ae8fc4910
IPW60R125C6FKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 30A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 14.5A, 10V
Power Dissipation (Max): 219W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 960µA
Supplier Device Package: PG-TO247-3-1
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2127 pF @ 100 V
auf Bestellung 82 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+11.6 EUR
30+6.58 EUR
60+5.97 EUR
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IPW60R031CFD7XKSA1 Infineon-IPW60R031CFD7-DS-v02_00-EN.pdf?fileId=5546d4625e763904015ea44f315531e2
IPW60R031CFD7XKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 63A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 63A (Tc)
Rds On (Max) @ Id, Vgs: 31mOhm @ 32.6A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.63mA
Supplier Device Package: PG-TO247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 141 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5623 pF @ 400 V
auf Bestellung 167 Stücke:
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AnzahlPrivatkunde
1+22.99 EUR
30+13.79 EUR
60+12.7 EUR
120+11.77 EUR
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IPW60R017C7XKSA1 Infineon-IPW60R017C7-DS-v02_00-EN.pdf?fileId=5546d46253a864fe0153cc8319e77eb8
IPW60R017C7XKSA1
Hersteller: Infineon Technologies
Description: HIGH POWER_NEW
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 109A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 58.2A, 10V
Power Dissipation (Max): 446W (Tc)
Vgs(th) (Max) @ Id: 4V @ 2.91mA
Supplier Device Package: PG-TO247-3-41
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9890 pF @ 400 V
auf Bestellung 1286 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+40.46 EUR
30+25.5 EUR
60+23.72 EUR
120+22.22 EUR
510+21.54 EUR
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IPW60R070P6XKSA1 Infineon-IPW60R070P6-DS-v02_00-en.pdf?fileId=5546d461464245d3014694ab3f43692e
IPW60R070P6XKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 53.5A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 53.5A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 20.6A, 10V
Power Dissipation (Max): 391W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.72mA
Supplier Device Package: PG-TO247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4750 pF @ 100 V
auf Bestellung 416 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+13.32 EUR
30+7.63 EUR
60+6.95 EUR
120+6.38 EUR
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IPW60R170CFD7XKSA1 Infineon-IPW60R170CFD7-DS-v02_00-EN.pdf?fileId=5546d4625e763904015ea46190b731e6
IPW60R170CFD7XKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 14A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 6A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 300µA
Supplier Device Package: PG-TO247-3-21
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1199 pF @ 400 V
auf Bestellung 105 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+9.07 EUR
30+5.01 EUR
60+4.52 EUR
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IPW60R055CFD7XKSA1 Infineon-MOSFET_CoolMOS_CFD7_600V-PB-v01_00-EN.pdf?fileId=5546d4625f96303e015fdd5758e81db7
IPW60R055CFD7XKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 38A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 18A, 10V
Power Dissipation (Max): 178W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 900µA
Supplier Device Package: PG-TO247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3194 pF @ 400 V
Produkt ist nicht verfügbar
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IPW60R090CFD7XKSA1 infineon-ipw60r090cfd7-datasheet-en.pdf
IPW60R090CFD7XKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 25A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 11.4A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 570µA
Supplier Device Package: PG-TO247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2103 pF @ 400 V
auf Bestellung 215 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+12.54 EUR
30+7.15 EUR
60+6.51 EUR
120+5.96 EUR
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IPW60R045CPAFKSA1 infineon-ipw60r045cpa-datasheet-en.pdf
IPW60R045CPAFKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 60A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 44A, 10V
Power Dissipation (Max): 431W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 3mA
Supplier Device Package: PG-TO247-3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 100 V
Qualification: AEC-Q101
auf Bestellung 329 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+34.64 EUR
30+21.5 EUR
60+19.94 EUR
120+18.62 EUR
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IPW60R125CFD7XKSA1 Infineon-IPW60R125CFD7-DS-v02_00-EN.pdf?fileId=5546d46261ff57770162002fa4562bb2
IPW60R125CFD7XKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 18A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 7.8A, 10V
Power Dissipation (Max): 92W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 390µA
Supplier Device Package: PG-TO247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1503 pF @ 400 V
auf Bestellung 40 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+10.72 EUR
30+6.03 EUR
Mindestbestellmenge: 2 Stücke
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IPW60R037CSFDXKSA1 Infineon-IPW60R037CSFD-DS-v02_00-EN.pdf?fileId=5546d46268554f4a016894b0464868d4
IPW60R037CSFDXKSA1
Hersteller: Infineon Technologies
Description: MOSFET N CH
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
Rds On (Max) @ Id, Vgs: 37mOhm @ 32.6A, 10V
Power Dissipation (Max): 245W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.63mA
Supplier Device Package: PG-TO247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 136 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5623 pF @ 400 V
auf Bestellung 328 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+20.84 EUR
30+12.39 EUR
60+11.38 EUR
120+10.53 EUR
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IPW60R040CFD7XKSA1 infineon-ipw60r040cfd7-datasheet-cn.pdf
IPW60R040CFD7XKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 50A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 24.9A, 10V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.25mA
Supplier Device Package: PG-TO247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 109 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4354 pF @ 400 V
auf Bestellung 250 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+19.6 EUR
30+11.58 EUR
60+10.63 EUR
120+9.82 EUR
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IPW60R080P7XKSA1 infineon-ipw60r080p7-datasheet-en.pdf
IPW60R080P7XKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 37A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 11.8A, 10V
Power Dissipation (Max): 129W (Tc)
Vgs(th) (Max) @ Id: 4V @ 590µA
Supplier Device Package: PG-TO247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2180 pF @ 400 V
auf Bestellung 9665 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+13.14 EUR
30+7.51 EUR
60+6.83 EUR
120+6.27 EUR
510+5.37 EUR
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IPW60R105CFD7XKSA1 Infineon-IPW60R105CFD7-DS-v02_00-EN.pdf?fileId=5546d46262b31d2e01633f162a544e05
IPW60R105CFD7XKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 21A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 9.3A, 10V
Power Dissipation (Max): 106W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 470µA
Supplier Device Package: PG-TO247-3-41
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1752 pF @ 400 V
auf Bestellung 4 Stücke:
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AnzahlPrivatkunde
2+11.06 EUR
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IPW60R099P7XKSA1 Infineon-IPW60R099P7-DS-v02_00-EN.pdf?fileId=5546d4625b10283a015b1f57c16d03d0
IPW60R099P7XKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 31A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 10.5A, 10V
Power Dissipation (Max): 117W (Tc)
Vgs(th) (Max) @ Id: 4V @ 530µA
Supplier Device Package: PG-TO247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1952 pF @ 400 V
auf Bestellung 446 Stücke:
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2+10.78 EUR
30+6.07 EUR
60+5.5 EUR
120+5.03 EUR
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IPW60R145CFD7XKSA1 Infineon-MOSFET_CoolMOS_CFD7_600V-PB-v01_00-EN.pdf?fileId=5546d4625f96303e015fdd5758e81db7
IPW60R145CFD7XKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 16A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 145mOhm @ 6.8A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 4V @ 340µA
Supplier Device Package: PG-TO247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1330 pF @ 400 V
Produkt ist nicht verfügbar
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IPW60R070C6FKSA1 infineon-ipw60r070c6-datasheet-en.pdf
IPW60R070C6FKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 53A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 53A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 25.8A, 10V
Power Dissipation (Max): 391W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1.72mA
Supplier Device Package: PG-TO247-3-1
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 100 V
auf Bestellung 79 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+18.46 EUR
30+10.84 EUR
60+9.94 EUR
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IPW60R099CPFKSA1 infineon-ipw60r099cp-datasheet-en.pdf
IPW60R099CPFKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 31A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 18A, 10V
Power Dissipation (Max): 255W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1.2mA
Supplier Device Package: PG-TO247-3-1
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 100 V
Produkt ist nicht verfügbar
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IPW60R099C7XKSA1 Infineon-IPW60R099C7-DS-v02_00-EN.pdf?fileId=5546d4624cb7f111014d4c8a42de3ffe
IPW60R099C7XKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 14A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 9.7A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 490µA
Supplier Device Package: PG-TO247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1819 pF @ 400 V
auf Bestellung 239 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+13.14 EUR
30+7.51 EUR
60+6.84 EUR
120+6.27 EUR
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IPW60R070CFD7XKSA1 infineon-ipw60r070cfd7-datasheet-cn.pdf
IPW60R070CFD7XKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 31A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 15.1A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 760µA
Supplier Device Package: PG-TO247-3-21
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2721 pF @ 400 V
auf Bestellung 1630 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+14.6 EUR
30+8.43 EUR
60+7.69 EUR
120+7.07 EUR
510+6.07 EUR
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S6BP203A8FST2B000 infineon-s6bp203a-assp-42v-2.4a-synchronous-buck-boost-dc-dc-converter-ic-datasheet-ja.pdf
S6BP203A8FST2B000
Hersteller: Infineon Technologies
Description: IC REG BCK BST 3.3V 2.4A 16TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.173", 4.40mm Width) Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Up/Step-Down
Current - Output: 2.4A
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Positive
Frequency - Switching: 200kHz ~ 2.1MHz
Voltage - Input (Max): 42V
Topology: Buck-Boost
Supplier Device Package: 16-TSSOP
Synchronous Rectifier: Yes
Voltage - Input (Min): 2.5V
Voltage - Output (Min/Fixed): 3.3V
Grade: Automotive
Part Status: Obsolete
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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S6BP203A8FST2B000 infineon-s6bp203a-assp-42v-2.4a-synchronous-buck-boost-dc-dc-converter-ic-datasheet-ja.pdf
S6BP203A8FST2B000
Hersteller: Infineon Technologies
Description: IC REG BCK BST 3.3V 2.4A 16TSSOP
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.173", 4.40mm Width) Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Up/Step-Down
Current - Output: 2.4A
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Positive
Frequency - Switching: 200kHz ~ 2.1MHz
Voltage - Input (Max): 42V
Topology: Buck-Boost
Supplier Device Package: 16-TSSOP
Synchronous Rectifier: Yes
Voltage - Input (Min): 2.5V
Voltage - Output (Min/Fixed): 3.3V
Grade: Automotive
Part Status: Obsolete
Qualification: AEC-Q100
auf Bestellung 3964 Stücke:
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AnzahlPrivatkunde
2+15.73 EUR
10+12.19 EUR
25+11.3 EUR
100+10.33 EUR
250+9.87 EUR
500+9.59 EUR
1000+9.37 EUR
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MB39C006APN-G-AMEFE1
MB39C006APN-G-AMEFE1
Hersteller: Infineon Technologies
Description: IC REG BUCK ADJ 800MA 10SON
Packaging: Tape & Reel (TR)
Package / Case: 10-WFDFN Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 800mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 2MHz, 3.2MHz
Voltage - Input (Max): 5.5V
Topology: Buck
Supplier Device Package: 10-SON (3x3)
Synchronous Rectifier: Yes
Voltage - Output (Max): 3.564V
Voltage - Input (Min): 2.5V
Voltage - Output (Min/Fixed): 0.446V
Part Status: Obsolete
Produkt ist nicht verfügbar
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MB39C006APN-G-AMEFE1
MB39C006APN-G-AMEFE1
Hersteller: Infineon Technologies
Description: IC REG BUCK ADJ 800MA 10SON
Packaging: Cut Tape (CT)
Package / Case: 10-WFDFN Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 800mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 2MHz, 3.2MHz
Voltage - Input (Max): 5.5V
Topology: Buck
Supplier Device Package: 10-SON (3x3)
Synchronous Rectifier: Yes
Voltage - Output (Max): 3.564V
Voltage - Input (Min): 2.5V
Voltage - Output (Min/Fixed): 0.446V
Part Status: Obsolete
auf Bestellung 2999 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
7+3.44 EUR
10+2.53 EUR
25+2.3 EUR
100+2.05 EUR
250+1.93 EUR
500+1.86 EUR
1000+1.8 EUR
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MB39C014PN-G-K1EFE1
MB39C014PN-G-K1EFE1
Hersteller: Infineon Technologies
Description: IC REG BUCK ADJ 800MA 10SON
Packaging: Tape & Reel (TR)
Package / Case: 10-WFDFN Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 800mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 2MHz, 3.2MHz
Voltage - Input (Max): 5.5V
Topology: Buck
Supplier Device Package: 10-SON (3x3)
Synchronous Rectifier: Yes
Voltage - Output (Max): 3.564V
Voltage - Input (Min): 2.5V
Voltage - Output (Min/Fixed): 0.446V
Part Status: Obsolete
Produkt ist nicht verfügbar
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MB39C014PN-G-K1EFE1
MB39C014PN-G-K1EFE1
Hersteller: Infineon Technologies
Description: IC REG BUCK ADJ 800MA 10SON
Packaging: Cut Tape (CT)
Package / Case: 10-WFDFN Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 800mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 2MHz, 3.2MHz
Voltage - Input (Max): 5.5V
Topology: Buck
Supplier Device Package: 10-SON (3x3)
Synchronous Rectifier: Yes
Voltage - Output (Max): 3.564V
Voltage - Input (Min): 2.5V
Voltage - Output (Min/Fixed): 0.446V
Part Status: Obsolete
Produkt ist nicht verfügbar
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DDB6U85N16LHOSA1 Infineon-DDB6U85N16L-DS-v02_00-en_de.pdf?fileId=db3a304412b407950112b43147c453fb
DDB6U85N16LHOSA1
Hersteller: Infineon Technologies
Description: DIODE MODULE GP 1600V AGISOPACK1
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 3 Independent
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: AG-ISOPACK-1
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.44 V @ 100 A
Current - Reverse Leakage @ Vr: 5 mA @ 1600 V
Produkt ist nicht verfügbar
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DDB6U215N16LHOSA1 Infineon-DDB6U215N16L-DS-v01_01-en_de.pdf?fileId=db3a304412b407950112b431505f5407
DDB6U215N16LHOSA1
Hersteller: Infineon Technologies
Description: DIODE MODULE GP 1600V
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 3 Independent
Supplier Device Package: Module
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.61 V @ 300 A
Current - Reverse Leakage @ Vr: 10 mA @ 1600 V
auf Bestellung 1 Stücke:
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1+339 EUR
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DDB6U104N18RRBOSA1 Infineon+-+Brochure+-+Solutions+for+Wind+Energy+Systems.pdf?fileId=db3a30433f9a93b7013f9f2973c01ed6
Hersteller: Infineon Technologies
Description: LOW POWER ECONO
Packaging: Bulk
Part Status: Active
auf Bestellung 157 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5+132.86 EUR
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DDB6U134N16RRB80BPSA1 Infineon-DDB6U134N16RR-DS-v01_01-de.pdf?fileId=db3a304412b407950112b433eac35e2a
DDB6U134N16RRB80BPSA1
Hersteller: Infineon Technologies
Description: IGBT MODULE 1200V 70A AG-ECONO2B
Packaging: Tray
Part Status: Active
auf Bestellung 12 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+115.13 EUR
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DDB6U50N22W1RPB11BPSA1 Infineon-DDB6U50N22W1RP_B11-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c850f4bee018582bb8f2e1958
DDB6U50N22W1RPB11BPSA1
Hersteller: Infineon Technologies
Description: EASY BRIDGE MODULE
Packaging: Tray
Part Status: Active
auf Bestellung 30 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+88.3 EUR
10+78.68 EUR
30+73.99 EUR
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DDB6U75N16W1RBOMA1 Infineon-DDB6U75N16W1R-DS-v02_00-en_de.pdf?fileId=db3a30432239cccd0122f436495e5657
DDB6U75N16W1RBOMA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 69A 335W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: Module
Part Status: Active
Current - Collector (Ic) (Max): 69 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 335 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 2.8 nF @ 25 V
auf Bestellung 22 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+131.99 EUR
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DDB6U180N16RRPB11BPSA1 Infineon-DDB6U180N16RR_B11-DS-v03_00-EN.pdf?fileId=5546d462518ffd8501524095699c70bc
DDB6U180N16RRPB11BPSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 140A AG-ECONO2B
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Chopper
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: AG-ECONO2B
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 140 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 515 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 6.3 nF @ 25 V
auf Bestellung 10 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+160.85 EUR
10+124.8 EUR
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DDB6U25N16VRBOMA1 EUPCS02448-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: IGBT MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter with Brake
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 15A
NTC Thermistor: Yes
Supplier Device Package: Module
Part Status: Active
Voltage - Collector Emitter Breakdown (Max): 1600 V
Power - Max: 86 W
Current - Collector Cutoff (Max): 1 mA
Produkt ist nicht verfügbar
Mindestbestellmenge: 30 Stücke
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DDB6U180N16RRPB37BPSA1 Infineon-DDB6U180N16RRP_B37-DS-v03_00-EN.pdf?fileId=5546d4625d5945ed015d7f3f7bd50895
DDB6U180N16RRPB37BPSA1
Hersteller: Infineon Technologies
Description: BRIDGE RECT 3P 1.6KV 50A ECONO27
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: AG-ECONO2-7
Part Status: Active
Voltage - Peak Reverse (Max): 1.6 kV
Current - Average Rectified (Io): 50 A
Voltage - Forward (Vf) (Max) @ If: 2.15 V @ 50 A
Current - Reverse Leakage @ Vr: 1 mA @ 1600 V
auf Bestellung 8 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+157.35 EUR
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DDB6U180N16RRBPSA1
Hersteller: Infineon Technologies
Description: IGBT MODULE
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
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DDB6U134N16RRB38BPSA1
Hersteller: Infineon Technologies
Description: LOW POWER ECONO
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Chopper
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.75V @ 15V, 70A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO2B
Part Status: Active
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 500 W
Current - Collector Cutoff (Max): 500 µA
Input Capacitance (Cies) @ Vce: 5.1 nF @ 25 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 15 Stücke
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DDB6U75N16W1RB11BOMA1 Infineon-DDB6U75N16W1R_B11-DS-v02_00-en_de.pdf?fileId=db3a30432ad629a6012af124a1255e01
DDB6U75N16W1RB11BOMA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 69A 335W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 69 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 335 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 2.8 nF @ 25 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 24 Stücke
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DDB6U104N16RRPB37BPSA1 Infineon-DDB6U104N16RRP_B37-DS-v03_00-EN.pdf?fileId=5546d4625b3ca4ec015b5745f6760280
DDB6U104N16RRPB37BPSA1
Hersteller: Infineon Technologies
Description: BRIDGE RECT 3P 1.6KV 35A ECONO27
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: AG-ECONO2-7
Part Status: Active
Voltage - Peak Reverse (Max): 1.6 kV
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 2.15 V @ 35 A
Current - Reverse Leakage @ Vr: 5 mA @ 1600 V
auf Bestellung 19 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+130.02 EUR
10+99.81 EUR
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