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BDP948H6327XTSA1 BDP948H6327XTSA1 Infineon Technologies bdp948_bdp950_bdp954.pdf?folderId=db3a304314dca38901155ffc06d51dc7&fileId=db3a304314dca38901156149b3e81f67 Description: TRANS PNP 45V 3A PG-SOT223-4-10
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 500mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: PG-SOT223-4-10
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 5 W
Produkt ist nicht verfügbar
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S29JL064J55BHI000 S29JL064J55BHI000 Infineon Technologies Infineon-S29JL064J_64_Mb_(8M_x_8_Bit_4M_x_16_Bit)_3_V_Simultaneous_Read_Write_Flash-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6688c56c7&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integ Description: IC FLASH 64MBIT PARALLEL 48FBGA
Memory Organization: 8M x 8, 4M x 16
Access Time: 55 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 55ns
Part Status: Active
Supplier Device Package: 48-FBGA (8.15x6.15)
Memory Format: FLASH
Technology: FLASH - NOR
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 64Mbit
Mounting Type: Surface Mount
Package / Case: 48-VFBGA
Packaging: Tray
DigiKey Programmable: Not Verified
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S29JL064J55TFI000 S29JL064J55TFI000 Infineon Technologies Infineon-S29JL064J_64_Mb_(8M_x_8_Bit_4M_x_16_Bit)_3_V_Simultaneous_Read_Write_Flash-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6688c56c7&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integ Description: IC FLASH 64MBIT PARALLEL 48TSOP
Memory Organization: 8M x 8, 4M x 16
Access Time: 55 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 55ns
Part Status: Active
Supplier Device Package: 48-TSOP
Memory Format: FLASH
Technology: FLASH - NOR
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 64Mbit
Mounting Type: Surface Mount
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Packaging: Tray
DigiKey Programmable: Verified
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10+15.87 EUR
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96+14.68 EUR
192+14.32 EUR
288+14.11 EUR
576+13.76 EUR
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S25FL064LABNFV010 S25FL064LABNFV010 Infineon Technologies infineon-s25fl064l-64-mbit-8-mbyte-3-datasheet-en.pdf Description: IC FLASH 64MBIT SPI/QUAD 8WSON
Memory Organization: 8M x 8
Memory Interface: SPI - Quad I/O, QPI
Part Status: Active
Supplier Device Package: 8-WSON (5x6)
Memory Format: FLASH
Clock Frequency: 108 MHz
Technology: FLASH - NOR
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 105°C (TA)
Memory Type: Non-Volatile
Memory Size: 64Mbit
Mounting Type: Surface Mount
Package / Case: 8-WFDFN Exposed Pad
Packaging: Tray
DigiKey Programmable: Not Verified
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IRFP4768PBF IRFP4768PBF Infineon Technologies irfp4768pbf.pdf?fileId=5546d462533600a40153562c959b2021 Description: MOSFET N-CH 250V 93A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 93A (Tc)
Rds On (Max) @ Id, Vgs: 17.5mOhm @ 56A, 10V
Power Dissipation (Max): 520W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10880 pF @ 50 V
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IPA60R1K0CEXKSA1 IPA60R1K0CEXKSA1 Infineon Technologies Infineon-IPA60R1K0CE-DS-v02_00-EN.pdf?fileId=5546d462533600a401537a8be0c671ef Description: MOSFET N-CH 600V 6.8A TO220
Rds On (Max) @ Id, Vgs: 1Ohm @ 1.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO220-FP
Vgs(th) (Max) @ Id: 3.5V @ 130µA
Power Dissipation (Max): 26W (Tc)
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50+1.19 EUR
100+1.11 EUR
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STK14C88-5K45M STK14C88-5K45M Infineon Technologies download Description: IC NVSRAM 256KBIT PAR 32CDIP
DigiKey Programmable: Not Verified
Memory Organization: 32K x 8
Access Time: 45 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 45ns
Part Status: Obsolete
Supplier Device Package: 32-CDIP
Memory Format: NVSRAM
Technology: NVSRAM (Non-Volatile SRAM)
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -55°C ~ 125°C (TA)
Memory Type: Non-Volatile
Memory Size: 256Kbit
Mounting Type: Through Hole
Package / Case: 32-CDIP (0.300", 7.62mm)
Packaging: Tube
Produkt ist nicht verfügbar
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STK14C88-5C45M STK14C88-5C45M Infineon Technologies DS_428_STK14C88.pdf Description: IC NVSRAM 256KBIT PAR 32CDIP
DigiKey Programmable: Not Verified
Memory Organization: 32K x 8
Access Time: 45 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 45ns
Part Status: Obsolete
Memory Size: 256Kbit
Supplier Device Package: 32-CDIP
Memory Format: NVSRAM
Technology: NVSRAM (Non-Volatile SRAM)
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -55°C ~ 125°C (TA)
Memory Type: Non-Volatile
Mounting Type: Through Hole
Package / Case: 32-CDIP (0.300", 7.62mm)
Packaging: Tube
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STK14C88-3NF35TR STK14C88-3NF35TR Infineon Technologies STK14C88-3.pdf Description: IC NVSRAM 256KBIT PAR 32SOIC
DigiKey Programmable: Not Verified
Write Cycle Time - Word, Page: 35ns
Part Status: Obsolete
Supplier Device Package: 32-SOIC
Memory Format: NVSRAM
Technology: NVSRAM (Non-Volatile SRAM)
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: 0°C ~ 70°C (TA)
Memory Type: Non-Volatile
Memory Size: 256Kbit
Mounting Type: Surface Mount
Package / Case: 32-SOIC (0.295", 7.50mm Width)
Packaging: Tape & Reel (TR)
Memory Organization: 32K x 8
Access Time: 35 ns
Memory Interface: Parallel
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STK14C88-NF35U STK14C88-NF35U Infineon Technologies STK14C88-NF35U.pdf Description: IC NVSRAM 256KBIT PAR 32SOIC
DigiKey Programmable: Not Verified
Memory Organization: 32K x 8
Access Time: 35 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 35ns
Part Status: Obsolete
Supplier Device Package: 32-SOIC
Memory Format: NVSRAM
Technology: NVSRAM (Non-Volatile SRAM)
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -55°C ~ 125°C (TA)
Memory Type: Non-Volatile
Memory Size: 256Kbit
Mounting Type: Surface Mount
Package / Case: 32-SOIC (0.295", 7.50mm Width)
Packaging: Tube
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STK14D88-NF45TR STK14D88-NF45TR Infineon Technologies STK14D88.pdf Description: IC NVSRAM 256KBIT PAR 32SOIC
Memory Organization: 32K x 8
Access Time: 45 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 45ns
Part Status: Obsolete
Supplier Device Package: 32-SOIC
Memory Format: NVSRAM
Technology: NVSRAM (Non-Volatile SRAM)
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: 0°C ~ 70°C (TA)
Memory Type: Non-Volatile
Memory Size: 256Kbit
Mounting Type: Surface Mount
Package / Case: 32-SOIC (0.295", 7.50mm Width)
Packaging: Tape & Reel (TR)
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STK14CA8-RF35 STK14CA8-RF35 Infineon Technologies STK14CA8.pdf Description: IC NVSRAM 1MBIT PARALLEL 48SSOP
Memory Organization: 128K x 8
Access Time: 35 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 35ns
Part Status: Obsolete
Supplier Device Package: 48-SSOP
Memory Format: NVSRAM
Technology: NVSRAM (Non-Volatile SRAM)
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: 0°C ~ 70°C (TA)
Memory Type: Non-Volatile
Memory Size: 1Mbit
Mounting Type: Surface Mount
Package / Case: 48-BSSOP (0.295", 7.50mm Width)
Packaging: Tube
Produkt ist nicht verfügbar
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STK14D88-NF45ITR STK14D88-NF45ITR Infineon Technologies STK14D88.pdf Description: IC NVSRAM 256KBIT PAR 32SOIC
Memory Organization: 32K x 8
Access Time: 45 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 45ns
Part Status: Obsolete
Supplier Device Package: 32-SOIC
Memory Format: NVSRAM
Technology: NVSRAM (Non-Volatile SRAM)
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 256Kbit
Mounting Type: Surface Mount
Package / Case: 32-SOIC (0.295", 7.50mm Width)
Packaging: Tape & Reel (TR)
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STK14C88-3NF45 STK14C88-3NF45 Infineon Technologies STK14C88-3.pdf Description: IC NVSRAM 256KBIT PAR 32SOIC
DigiKey Programmable: Not Verified
Memory Format: NVSRAM
Technology: NVSRAM (Non-Volatile SRAM)
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: 0°C ~ 70°C (TA)
Memory Type: Non-Volatile
Memory Size: 256Kbit
Mounting Type: Surface Mount
Package / Case: 32-SOIC (0.295", 7.50mm Width)
Packaging: Tube
Memory Organization: 32K x 8
Access Time: 45 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 45ns
Part Status: Obsolete
Supplier Device Package: 32-SOIC
Produkt ist nicht verfügbar
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STK14C88-NF25 STK14C88-NF25 Infineon Technologies DS_428_STK14C88.pdf Description: IC NVSRAM 256KBIT PAR 32SOIC
DigiKey Programmable: Not Verified
Supplier Device Package: 32-SOIC
Memory Format: NVSRAM
Technology: NVSRAM (Non-Volatile SRAM)
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: 0°C ~ 70°C (TA)
Memory Type: Non-Volatile
Memory Size: 256Kbit
Mounting Type: Surface Mount
Package / Case: 32-SOIC (0.295", 7.50mm Width)
Packaging: Tube
Memory Organization: 32K x 8
Access Time: 25 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 25ns
Part Status: Obsolete
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STK14C88-NF35TR STK14C88-NF35TR Infineon Technologies DS_428_STK14C88.pdf Description: IC NVSRAM 256KBIT PAR 32SOIC
DigiKey Programmable: Not Verified
Memory Organization: 32K x 8
Access Time: 35 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 35ns
Part Status: Obsolete
Supplier Device Package: 32-SOIC
Memory Format: NVSRAM
Technology: NVSRAM (Non-Volatile SRAM)
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: 0°C ~ 70°C (TA)
Memory Type: Non-Volatile
Memory Size: 256Kbit
Mounting Type: Surface Mount
Package / Case: 32-SOIC (0.295", 7.50mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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IGW40N60H3FKSA1 IGW40N60H3FKSA1 Infineon Technologies IGW40N60H3_Rev2_1G.pdf?folderId=db3a3043156fd5730115f56849b61941&fileId=db3a3043293a15c401293a9970bb0008 Description: IGBT TRENCH FS 600V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
Supplier Device Package: PG-TO247-3-1
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 19ns/197ns
Switching Energy: 1.68mJ
Test Condition: 400V, 40A, 7.9Ohm, 15V
Gate Charge: 223 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 306 W
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IRF9540NLPBF IRF9540NLPBF Infineon Technologies irf9540nspbf.pdf?fileId=5546d462533600a401535611d92a1dca Description: MOSFET P-CH 100V 23A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 117mOhm @ 14A, 10V
Power Dissipation (Max): 3.1W (Ta), 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
Produkt ist nicht verfügbar
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CY2544QC011 CY2544QC011 Infineon Technologies download Description: IC CLOCK GENERATOR 24QFN
Packaging: Tray
Package / Case: 24-UFQFN Exposed Pad
Mounting Type: Surface Mount
Output: Clock
Frequency - Max: 166MHz
Type: Clock Generator
Input: LVCMOS, Crystal
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.25V ~ 3.6V
Ratio - Input:Output: 1:9
Differential - Input:Output: No/No
Supplier Device Package: 24-QFN (4x4)
PLL: Yes with Bypass
Divider/Multiplier: Yes/No
Part Status: Active
Number of Circuits: 4
DigiKey Programmable: Not Verified
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F3L25R12W1T4B27BOMA1 F3L25R12W1T4B27BOMA1 Infineon Technologies Infineon-F3L25R12W1T4_B27-DS-v02_00-EN.pdf?fileId=5546d4625f2e26bc015f499b0c934063 Description: MODULE IGBT 1200V EASY1B-2
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 25A
NTC Thermistor: Yes
Supplier Device Package: AG-EASY1B
Part Status: Active
Current - Collector (Ic) (Max): 45 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 215 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 1.45 nF @ 25 V
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SPU02N60C3BKMA1 SPU02N60C3BKMA1 Infineon Technologies SPD_U02N60C3_Rev.2.4.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42d79214883 Description: MOSFET N-CH 650V 1.8A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1.1A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 80µA
Supplier Device Package: PG-TO251-3-21
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 12.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 25 V
Produkt ist nicht verfügbar
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CY7C65640A-LFXC CY7C65640A-LFXC Infineon Technologies CY7C65640A.pdf Description: IC USB HUB CONTROLLER HS 56VQFN
Packaging: Tube
Package / Case: 56-VFQFN Exposed Pad
Function: Hub Controller
Interface: USB
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3.15V ~ 3.45V
Protocol: USB
Standards: USB 2.0
Supplier Device Package: 56-QFN (8x8)
Part Status: Obsolete
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IRLB3036PBF IRLB3036PBF Infineon Technologies infineon-irlb3036-datasheet-en.pdf Description: MOSFET N-CH 60V 195A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 165A, 10V
Power Dissipation (Max): 380W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 11210 pF @ 50 V
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3+9.21 EUR
10+6.08 EUR
50+4.74 EUR
100+4.3 EUR
500+3.53 EUR
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IRFB4110PBF IRFB4110PBF Infineon Technologies irfb4110pbf.pdf?fileId=5546d462533600a401535615a9571e0b Description: MOSFET N-CH 100V 120A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 75A, 10V
Power Dissipation (Max): 370W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9620 pF @ 50 V
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10+4.93 EUR
50+3.81 EUR
100+3.45 EUR
500+2.82 EUR
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IGCM15F60GAXKMA1 IGCM15F60GAXKMA1 Infineon Technologies Infineon-IGCM15F60GA-DS-v01_07-EN.pdf?fileId=5546d4624fb7fef2014fcb15c0597867 Description: IGBT IPM 600V 15A 24-PWRDIP MOD
Packaging: Tube
Package / Case: 24-PowerDIP Module (1.028", 26.10mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2000Vrms
Part Status: Active
Current: 15 A
Voltage: 600 V
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14+19.11 EUR
112+14.96 EUR
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IKCM15F60GAXKMA1 IKCM15F60GAXKMA1 Infineon Technologies Infineon-IKCM15F60GA-DS-v01_02-EN.pdf?fileId=5546d4624fb7fef2014fcb43b29e78c1 Description: IGBT IPM 600V 15A 24-PWRDIP MOD
Packaging: Tube
Package / Case: 24-PowerDIP Module (1.028", 26.10mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2000Vrms
Part Status: Active
Current: 15 A
Voltage: 600 V
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S29PL127J60BAW000 S29PL127J60BAW000 Infineon Technologies Infineon-S29PL-J_128-_128-_64-_32-MBIT_(8_8_4_2M_X_16_BIT)_3_V_FLASH_WITH_ENHANCED_VERSATILEIO-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed5806154f0&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_e Description: IC FLASH 128MBIT PARALLEL 80FBGA
DigiKey Programmable: Not Verified
Memory Organization: 8M x 16
Access Time: 60 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 60ns
Part Status: Obsolete
Supplier Device Package: 80-FBGA (8x11)
Memory Format: FLASH
Technology: FLASH - NOR
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -25°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 128Mbit
Mounting Type: Surface Mount
Package / Case: 80-VFBGA
Packaging: Tray
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S29PL127J65BAW000 S29PL127J65BAW000 Infineon Technologies Infineon-S29PL-J_128-_128-_64-_32-MBIT_(8_8_4_2M_X_16_BIT)_3_V_FLASH_WITH_ENHANCED_VERSATILEIO-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed5806154f0&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_e Description: IC FLASH 128MBIT PARALLEL 80FBGA
DigiKey Programmable: Not Verified
Memory Organization: 8M x 16
Access Time: 65 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 65ns
Part Status: Obsolete
Supplier Device Package: 80-FBGA (8x11)
Memory Format: FLASH
Technology: FLASH - NOR
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -25°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 128Mbit
Mounting Type: Surface Mount
Package / Case: 80-VFBGA
Packaging: Tray
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S29PL127J70BAW000 S29PL127J70BAW000 Infineon Technologies Infineon-S29PL-J_128-_128-_64-_32-MBIT_(8_8_4_2M_X_16_BIT)_3_V_FLASH_WITH_ENHANCED_VERSATILEIO-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed5806154f0&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_e Description: IC FLASH 128MBIT PARALLEL 80FBGA
DigiKey Programmable: Not Verified
Memory Format: FLASH
Technology: FLASH - NOR
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -25°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 128Mbit
Mounting Type: Surface Mount
Package / Case: 80-VFBGA
Packaging: Tray
Memory Organization: 8M x 16
Access Time: 70 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 70ns
Part Status: Obsolete
Supplier Device Package: 80-FBGA (8x11)
Produkt ist nicht verfügbar
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IRFB4115PBF IRFB4115PBF Infineon Technologies irfb4115pbf.pdf?fileId=5546d462533600a401535615ba6a1e0f Description: MOSFET N-CH 150V 104A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 104A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 62A, 10V
Power Dissipation (Max): 380W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5270 pF @ 50 V
Produkt ist nicht verfügbar
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IRFB4127PBF IRFB4127PBF Infineon Technologies irfb4127pbf.pdf?fileId=5546d462533600a401535615c2ef1e11 Description: MOSFET N-CH 200V 76A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 76A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 44A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5380 pF @ 50 V
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TC1797512F180EFACKXUMA1 Infineon Technologies TC1797_DS_V1+3.pdf?fileId=db3a30431ed1d7b2011efeaa4ad16b6d Description: IC MCU 32BIT 4MB FLASH 416BGA
Number of I/O: 221
Part Status: Obsolete
Supplier Device Package: PG-BGA-416-27
Peripherals: DMA, POR, WDT
Connectivity: ASC, CANbus, EBI/EMI, FlexRay, MLI, MSC, SSC
Voltage - Supply (Vcc/Vdd): 1.42V ~ 1.58V
Core Size: 32-Bit Single-Core
DigiKey Programmable: Not Verified
Data Converters: A/D 4x10b, 44x12b
Core Processor: TriCore™
EEPROM Size: 64K x 8
Program Memory Type: FLASH
Oscillator Type: External
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 224K x 8
Program Memory Size: 4MB (4M x 8)
Speed: 180MHz
Mounting Type: Surface Mount
Package / Case: 416-BGA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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IRFB4227PBF IRFB4227PBF Infineon Technologies infineon-irfb4227-datasheet-en.pdf Description: MOSFET N-CH 200V 65A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 46A, 10V
Power Dissipation (Max): 330W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4600 pF @ 25 V
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CY9AF142MBPMC-G-JNE2 CY9AF142MBPMC-G-JNE2 Infineon Technologies Infineon-CY9A140NB_Series_32_Bit_Arm_Cortex_M3_FM3_Microcontroller-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee002d66576&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC MCU 32BIT 160KB FLASH 80LQFP
Packaging: Tray
Number of I/O: 66
Part Status: Active
Supplier Device Package: 80-LQFP (12x12)
Peripherals: LVD, POR, PWM, WDT
Connectivity: CSIO, EBI/EMI, I2C, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
Core Size: 32-Bit Single-Core
Data Converters: A/D 17x12b
Core Processor: ARM® Cortex®-M3
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 16K x 8
Program Memory Size: 160KB (160K x 8)
Speed: 40MHz
Mounting Type: Surface Mount
Package / Case: 80-LQFP
DigiKey Programmable: Not Verified
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IRIDIUMSLM9670TPM20TOBO1 IRIDIUMSLM9670TPM20TOBO1 Infineon Technologies IRIDIUMSLM9670TPM20TOBO1_Web.pdf Description: EVAL IRIDIUM SLM 9670 RASPBERRY
Packaging: Bulk
Function: Transceiver
Type: RF
Contents: Board(s)
Utilized IC / Part: SLM9670
Platform: Raspberry Pi
Part Status: Active
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IRIDIUMSLI9670TPM20TOBO1 IRIDIUMSLI9670TPM20TOBO1 Infineon Technologies IRIDIUMSLI9670TPM20TOBO1_Web.pdf Description: EVAL IRIDIUM SLI 9670 RASPBERRY
Part Status: Active
Platform: Raspberry Pi
Utilized IC / Part: SLI9670
Contents: Board(s)
Type: RF
Function: Transceiver
Packaging: Bulk
Produkt ist nicht verfügbar
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ICE3A0565ZXKLA1 ICE3A0565ZXKLA1 Infineon Technologies CoolSET-F3.pdf?folderId=db3a304412b407950112b4182a3d24f8&fileId=db3a304412b407950112b428f6ba3f30 Description: IC OFFLINE SWITCH FLYBACK 7DIP
Power (Watts): 25 W
Part Status: Not For New Designs
Control Features: Soft Start
Voltage - Start Up: 15 V
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Supplier Device Package: PG-DIP-7-1
Voltage - Supply (Vcc/Vdd): 8.5V ~ 21V
Topology: Flyback
Output Isolation: Isolated
Voltage - Breakdown: 650V
Internal Switch(s): Yes
Frequency - Switching: 100kHz
Duty Cycle: 72%
Operating Temperature: -25°C ~ 130°C (TJ)
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Packaging: Tube
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EVAL3KW2LLCP747TOBO1 EVAL3KW2LLCP747TOBO1 Infineon Technologies Infineon-GeneralDescription_EVAL_3KW_2LLC_P7_47-ATI-v01_00-EN.pdf?fileId=5546d4625b3ca4ec015b5833f488044e Description: EVAL BOARD ICE2QR2280Z XMC4400
Packaging: Bulk
Voltage - Output: 44V ~ 58V
Voltage - Input: 350V ~ 400V
Current - Output: 55A
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: ICE2QR2280Z, XMC4400
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1 Isolated Output
Part Status: Active
Power - Output: 3kW
Contents: Board(s)
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EVAL600W12VLLCP7TOBO1 EVAL600W12VLLCP7TOBO1 Infineon Technologies Infineon-ApplicationNote_EvaluationBoard_EVAL_600W_12V_LLC_P7-AN-v01_00-EN.pdf?fileId=5546d4625b10283a015b1e4f218b0035 Description: EVAL BOARD ICE2HS01G ICE2QR2280Z
Packaging: Bulk
Voltage - Output: 12V
Voltage - Input: 350V ~ 410V
Current - Output: 50A
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: ICE2HS01G, ICE2QR2280Z
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1 Isolated Output
Part Status: Active
Power - Output: 600W
Contents: Board(s)
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EVAL800WPFCP7TOBO1 EVAL800WPFCP7TOBO1 Infineon Technologies Infineon-ApplicationNote_EvaluationBoard_EVAL_800W_PFC_P7-AN-v01_00-EN.pdf?fileId=5546d4625b10283a015b141c54790da7 Description: EVAL BRD ICE2QR2280Z ICE3PCS01G
Packaging: Bulk
Function: Power Factor Correction
Type: Power Management
Utilized IC / Part: ICE2QR2280Z, ICE3PCS01G
Supplied Contents: Board(s)
Part Status: Active
Contents: Board(s)
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IRF250P225 IRF250P225 Infineon Technologies IR_PartNumberingSystem.pdf Description: MOSFET N-CH 250V 69A TO247AC
Rds On (Max) @ Id, Vgs: 22mOhm @ 41A, 10V
Current - Continuous Drain (Id) @ 25°C: 69A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 4897 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247AC
Vgs(th) (Max) @ Id: 4V @ 270µA
Power Dissipation (Max): 313W (Tc)
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IRF250P224 IRF250P224 Infineon Technologies Infineon-IRF250P224-DS-v01_00-EN.pdf?fileId=5546d4625a888733015a8bb640137c6e Description: MOSFET N-CH 250V 96A TO247AC
Input Capacitance (Ciss) (Max) @ Vds: 9915 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 203 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247AC
Vgs(th) (Max) @ Id: 4V @ 270µA
Power Dissipation (Max): 313W (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 58A, 10V
Current - Continuous Drain (Id) @ 25°C: 96A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Produkt ist nicht verfügbar
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DZ435N40KHPSA1 DZ435N40KHPSA1 Infineon Technologies Infineon-DZ435N-DS-v03_02-EN.pdf?fileId=db3a3043243b5f170124e2ccd4426304 Description: DIODE GEN PURP 4KV 700A MODULE
Packaging: Tray
Current - Reverse Leakage @ Vr: 50 mA @ 4000 V
Voltage - Forward (Vf) (Max) @ If: 1.71 V @ 1200 A
Voltage - DC Reverse (Vr) (Max): 4000 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: Module
Current - Average Rectified (Io): 700A
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: Module
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IKW15T120FKSA1 IKW15T120FKSA1 Infineon Technologies fundamentals-of-power-semiconductors Description: IGBT NPT FS 1200V 30A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 140 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 15A
Supplier Device Package: PG-TO247-3-1
IGBT Type: NPT, Trench Field Stop
Td (on/off) @ 25°C: 50ns/520ns
Switching Energy: 2.7mJ
Test Condition: 600V, 15A, 56Ohm, 15V
Gate Charge: 85 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 110 W
Produkt ist nicht verfügbar
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CY9BF122LQN-G-AVE2 CY9BF122LQN-G-AVE2 Infineon Technologies Infineon-CY9B120M_Series_32_Bit_Arm_Cortex_M3_FM3_Microcontroller-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0edfa79064e9&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC MCU 32BIT 160KB FLASH 64QFN
Packaging: Tray
Package / Case: 64-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 72MHz
Program Memory Size: 160KB (160K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 23x12b; D/A 2x10b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 64-QFN (9x9)
Part Status: Active
Number of I/O: 50
DigiKey Programmable: Not Verified
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100+11.21 EUR
260+10.7 EUR
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1040+10.16 EUR
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CY9BF124KQN-G-AVE2 CY9BF124KQN-G-AVE2 Infineon Technologies Infineon-CY9B120M_Series_32_Bit_Arm_Cortex_M3_FM3_Microcontroller-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0edfa79064e9&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC MCU 32BIT 288KB FLASH 48QFN
DigiKey Programmable: Not Verified
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 32K x 8
Program Memory Size: 288KB (288K x 8)
Speed: 72MHz
Mounting Type: Surface Mount
Package / Case: 48-VFQFN Exposed Pad
Packaging: Tray
Number of I/O: 35
Part Status: Active
Supplier Device Package: 48-QFN (7x7)
Peripherals: DMA, LVD, POR, PWM, WDT
Connectivity: CSIO, I2C, LINbus, UART/USART
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit Single-Core
Data Converters: A/D 14x12b; D/A 2x10b
Core Processor: ARM® Cortex®-M3
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CY9BF122MPMC1-G-JNE2 CY9BF122MPMC1-G-JNE2 Infineon Technologies Infineon-CY9B120M_Series_32_Bit_Arm_Cortex_M3_FM3_Microcontroller-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0edfa79064e9&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC MCU 32BIT 160KB FLASH 80LQFP
Number of I/O: 65
Part Status: Active
Supplier Device Package: 80-LQFP (14x14)
Peripherals: DMA, LVD, POR, PWM, WDT
Connectivity: CSIO, I2C, LINbus, UART/USART
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit Single-Core
Data Converters: A/D 26x12b; D/A 2x10b
Core Processor: ARM® Cortex®-M3
DigiKey Programmable: Not Verified
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 16K x 8
Program Memory Size: 160KB (160K x 8)
Speed: 72MHz
Mounting Type: Surface Mount
Package / Case: 80-LQFP
Packaging: Tray
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FZ750R65KE3NOSA1 FZ750R65KE3NOSA1 Infineon Technologies Infineon-FZ750R65KE3-DS-v03_01-EN.pdf?fileId=db3a304325afd6e00126461fd3936974 Description: IGBT MOD 6500V 750A A-IHV190-6
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -50°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 750A
NTC Thermistor: No
Supplier Device Package: Module
Part Status: Active
Current - Collector (Ic) (Max): 750 A
Voltage - Collector Emitter Breakdown (Max): 6500 V
Power - Max: 14500 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 205 nF @ 25 V
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IPW60R099C6FKSA1 IPW60R099C6FKSA1 Infineon Technologies IPB60R099C6_2_1.pdf?folderId=db3a3043163797a6011638933eda014b&fileId=db3a30432313ff5e012394d25bd3069e Description: MOSFET N-CH 600V 37.9A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37.9A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 18.1A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1.21mA
Supplier Device Package: PG-TO247-3-1
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 119 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2660 pF @ 100 V
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120+7.07 EUR
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BSC019N02KSGAUMA1 BSC019N02KSGAUMA1 Infineon Technologies BSC019N02KS+G+Rev1.2.pdf?folderId=db3a3043163797a6011637c0dc9c0001&fileId=db3a3043163797a6011637c16cdf0002 Description: MOSFET N-CH 20V 30A/100A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.95mOhm @ 50A, 4.5V
Power Dissipation (Max): 2.8W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 1.2V @ 350µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 10 V
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IPP034N08N5AKSA1 IPP034N08N5AKSA1 Infineon Technologies Infineon-IPP034N08N5-DS-v02_00-EN.pdf?fileId=5546d4624ad04ef9014ade84c8b17b40 Description: MOSFET N-CH 80V 120A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 100A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 108µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6240 pF @ 40 V
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S6BP203A8FST2B20A Infineon Technologies Description: IC REG BCK-BST 3.3V 2.4A 16TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.173", 4.40mm Width) Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Up/Step-Down
Current - Output: 2.4A
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Positive
Frequency - Switching: 200kHz ~ 2.1MHz
Voltage - Input (Max): 42V
Topology: Buck-Boost
Supplier Device Package: 16-TSSOP
Synchronous Rectifier: Yes
Voltage - Input (Min): 2.5V
Voltage - Output (Min/Fixed): 3.3V
Part Status: Last Time Buy
Produkt ist nicht verfügbar
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IRLB4030PBF IRLB4030PBF Infineon Technologies irlb4030pbf.pdf?fileId=5546d462533600a4015356604640258d Description: MOSFET N-CH 100V 180A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 110A, 10V
Power Dissipation (Max): 370W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 11360 pF @ 50 V
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IRLB8748PBF IRLB8748PBF Infineon Technologies infineon-irlb8748-datasheet-en.pdf Description: MOSFET N-CH 30V 92A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 92A (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 40A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 50µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2139 pF @ 15 V
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IDWD40G120C5XKSA1 IDWD40G120C5XKSA1 Infineon Technologies Infineon-IDWD40G120C5-DS-v02_00-EN.pdf?fileId=5546d462689a790c016933d56ffd548f Description: DIODE SIC 1.2KV 110A PGTO247-2
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 2592pF @ 1V, 1MHz
Current - Average Rectified (Io): 110A
Supplier Device Package: PG-TO247-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 40 A
Current - Reverse Leakage @ Vr: 332 µA @ 1200 V
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IRFZ44ESTRRPBF IRFZ44ESTRRPBF Infineon Technologies irfz44espbf.pdf?fileId=5546d462533600a40153563b2c662208 Description: MOSFET N-CH 60V 48A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 29A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1360 pF @ 25 V
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CY7C64316-16LKXCT CY7C64316-16LKXCT Infineon Technologies download Description: IC MCU USB ENCORE CONTROL 16QFN
Packaging: Tape & Reel (TR)
Package / Case: 16-UFQFN
Mounting Type: Surface Mount
Interface: I²C, SPI, USB
RAM Size: 2K x 8
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3V ~ 5.5V
Controller Series: CY7C643xx
Program Memory Type: FLASH (32kB)
Applications: USB Microcontroller
Core Processor: M8C
Supplier Device Package: 16-QFN (3x3)
Part Status: Last Time Buy
Number of I/O: 11
Produkt ist nicht verfügbar
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ETD540N22P60HPSA1 ETD540N22P60HPSA1 Infineon Technologies Infineon-DS_eTT540N22P60-DS-v03_01-EN.pdf?fileId=5546d46266f85d6301670d4da56a366a Description: SCR MODULE 2.2KV 700A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 135°C (TC)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 16300A @ 50Hz
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 542 A
Voltage - Gate Trigger (Vgt) (Max): 2.2 V
Part Status: Active
Current - On State (It (RMS)) (Max): 700 A
Voltage - Off State: 2.2 kV
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SPP20N60CFDXKSA1 SPP20N60CFDXKSA1 Infineon Technologies SPP20N60CFD_Rev.2.4.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42bffe24649 Description: MOSFET N-CH 650V 20.7A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20.7A (Tc)
Rds On (Max) @ Id, Vgs: 220mOhm @ 13.1A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: PG-TO220-3-1
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V
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AIKP20N60CTAKSA1 AIKP20N60CTAKSA1 Infineon Technologies Infineon-AIKP20N60CT-DS-v02_01-EN.pdf?fileId=5546d4625c167129015c5382b0927c97 Description: IGBT TRENCH FS 600V 40A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 20A
Supplier Device Package: PG-TO220-3-1
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 18ns/199ns
Switching Energy: 310µJ (on), 460µJ (off)
Test Condition: 400V, 20A, 12Ohm, 15V
Gate Charge: 120 nC
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 156 W
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BDP948H6327XTSA1 bdp948_bdp950_bdp954.pdf?folderId=db3a304314dca38901155ffc06d51dc7&fileId=db3a304314dca38901156149b3e81f67
BDP948H6327XTSA1
Hersteller: Infineon Technologies
Description: TRANS PNP 45V 3A PG-SOT223-4-10
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 500mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: PG-SOT223-4-10
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 5 W
Produkt ist nicht verfügbar
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S29JL064J55BHI000 Infineon-S29JL064J_64_Mb_(8M_x_8_Bit_4M_x_16_Bit)_3_V_Simultaneous_Read_Write_Flash-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6688c56c7&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integ
S29JL064J55BHI000
Hersteller: Infineon Technologies
Description: IC FLASH 64MBIT PARALLEL 48FBGA
Memory Organization: 8M x 8, 4M x 16
Access Time: 55 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 55ns
Part Status: Active
Supplier Device Package: 48-FBGA (8.15x6.15)
Memory Format: FLASH
Technology: FLASH - NOR
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 64Mbit
Mounting Type: Surface Mount
Package / Case: 48-VFBGA
Packaging: Tray
DigiKey Programmable: Not Verified
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S29JL064J55TFI000 Infineon-S29JL064J_64_Mb_(8M_x_8_Bit_4M_x_16_Bit)_3_V_Simultaneous_Read_Write_Flash-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6688c56c7&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integ
S29JL064J55TFI000
Hersteller: Infineon Technologies
Description: IC FLASH 64MBIT PARALLEL 48TSOP
Memory Organization: 8M x 8, 4M x 16
Access Time: 55 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 55ns
Part Status: Active
Supplier Device Package: 48-TSOP
Memory Format: FLASH
Technology: FLASH - NOR
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 64Mbit
Mounting Type: Surface Mount
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Packaging: Tray
DigiKey Programmable: Verified
auf Bestellung 879 Stücke:
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S25FL064LABNFV010 infineon-s25fl064l-64-mbit-8-mbyte-3-datasheet-en.pdf
S25FL064LABNFV010
Hersteller: Infineon Technologies
Description: IC FLASH 64MBIT SPI/QUAD 8WSON
Memory Organization: 8M x 8
Memory Interface: SPI - Quad I/O, QPI
Part Status: Active
Supplier Device Package: 8-WSON (5x6)
Memory Format: FLASH
Clock Frequency: 108 MHz
Technology: FLASH - NOR
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 105°C (TA)
Memory Type: Non-Volatile
Memory Size: 64Mbit
Mounting Type: Surface Mount
Package / Case: 8-WFDFN Exposed Pad
Packaging: Tray
DigiKey Programmable: Not Verified
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IRFP4768PBF irfp4768pbf.pdf?fileId=5546d462533600a40153562c959b2021
IRFP4768PBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 250V 93A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 93A (Tc)
Rds On (Max) @ Id, Vgs: 17.5mOhm @ 56A, 10V
Power Dissipation (Max): 520W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10880 pF @ 50 V
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IPA60R1K0CEXKSA1 Infineon-IPA60R1K0CE-DS-v02_00-EN.pdf?fileId=5546d462533600a401537a8be0c671ef
IPA60R1K0CEXKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 6.8A TO220
Rds On (Max) @ Id, Vgs: 1Ohm @ 1.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO220-FP
Vgs(th) (Max) @ Id: 3.5V @ 130µA
Power Dissipation (Max): 26W (Tc)
auf Bestellung 336 Stücke:
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STK14C88-5K45M download
STK14C88-5K45M
Hersteller: Infineon Technologies
Description: IC NVSRAM 256KBIT PAR 32CDIP
DigiKey Programmable: Not Verified
Memory Organization: 32K x 8
Access Time: 45 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 45ns
Part Status: Obsolete
Supplier Device Package: 32-CDIP
Memory Format: NVSRAM
Technology: NVSRAM (Non-Volatile SRAM)
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -55°C ~ 125°C (TA)
Memory Type: Non-Volatile
Memory Size: 256Kbit
Mounting Type: Through Hole
Package / Case: 32-CDIP (0.300", 7.62mm)
Packaging: Tube
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STK14C88-5C45M DS_428_STK14C88.pdf
STK14C88-5C45M
Hersteller: Infineon Technologies
Description: IC NVSRAM 256KBIT PAR 32CDIP
DigiKey Programmable: Not Verified
Memory Organization: 32K x 8
Access Time: 45 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 45ns
Part Status: Obsolete
Memory Size: 256Kbit
Supplier Device Package: 32-CDIP
Memory Format: NVSRAM
Technology: NVSRAM (Non-Volatile SRAM)
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -55°C ~ 125°C (TA)
Memory Type: Non-Volatile
Mounting Type: Through Hole
Package / Case: 32-CDIP (0.300", 7.62mm)
Packaging: Tube
Produkt ist nicht verfügbar
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STK14C88-3NF35TR STK14C88-3.pdf
STK14C88-3NF35TR
Hersteller: Infineon Technologies
Description: IC NVSRAM 256KBIT PAR 32SOIC
DigiKey Programmable: Not Verified
Write Cycle Time - Word, Page: 35ns
Part Status: Obsolete
Supplier Device Package: 32-SOIC
Memory Format: NVSRAM
Technology: NVSRAM (Non-Volatile SRAM)
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: 0°C ~ 70°C (TA)
Memory Type: Non-Volatile
Memory Size: 256Kbit
Mounting Type: Surface Mount
Package / Case: 32-SOIC (0.295", 7.50mm Width)
Packaging: Tape & Reel (TR)
Memory Organization: 32K x 8
Access Time: 35 ns
Memory Interface: Parallel
Produkt ist nicht verfügbar
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STK14C88-NF35U STK14C88-NF35U.pdf
STK14C88-NF35U
Hersteller: Infineon Technologies
Description: IC NVSRAM 256KBIT PAR 32SOIC
DigiKey Programmable: Not Verified
Memory Organization: 32K x 8
Access Time: 35 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 35ns
Part Status: Obsolete
Supplier Device Package: 32-SOIC
Memory Format: NVSRAM
Technology: NVSRAM (Non-Volatile SRAM)
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -55°C ~ 125°C (TA)
Memory Type: Non-Volatile
Memory Size: 256Kbit
Mounting Type: Surface Mount
Package / Case: 32-SOIC (0.295", 7.50mm Width)
Packaging: Tube
Produkt ist nicht verfügbar
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STK14D88-NF45TR STK14D88.pdf
STK14D88-NF45TR
Hersteller: Infineon Technologies
Description: IC NVSRAM 256KBIT PAR 32SOIC
Memory Organization: 32K x 8
Access Time: 45 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 45ns
Part Status: Obsolete
Supplier Device Package: 32-SOIC
Memory Format: NVSRAM
Technology: NVSRAM (Non-Volatile SRAM)
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: 0°C ~ 70°C (TA)
Memory Type: Non-Volatile
Memory Size: 256Kbit
Mounting Type: Surface Mount
Package / Case: 32-SOIC (0.295", 7.50mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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STK14CA8-RF35 STK14CA8.pdf
STK14CA8-RF35
Hersteller: Infineon Technologies
Description: IC NVSRAM 1MBIT PARALLEL 48SSOP
Memory Organization: 128K x 8
Access Time: 35 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 35ns
Part Status: Obsolete
Supplier Device Package: 48-SSOP
Memory Format: NVSRAM
Technology: NVSRAM (Non-Volatile SRAM)
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: 0°C ~ 70°C (TA)
Memory Type: Non-Volatile
Memory Size: 1Mbit
Mounting Type: Surface Mount
Package / Case: 48-BSSOP (0.295", 7.50mm Width)
Packaging: Tube
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STK14D88-NF45ITR STK14D88.pdf
STK14D88-NF45ITR
Hersteller: Infineon Technologies
Description: IC NVSRAM 256KBIT PAR 32SOIC
Memory Organization: 32K x 8
Access Time: 45 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 45ns
Part Status: Obsolete
Supplier Device Package: 32-SOIC
Memory Format: NVSRAM
Technology: NVSRAM (Non-Volatile SRAM)
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 256Kbit
Mounting Type: Surface Mount
Package / Case: 32-SOIC (0.295", 7.50mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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STK14C88-3NF45 STK14C88-3.pdf
STK14C88-3NF45
Hersteller: Infineon Technologies
Description: IC NVSRAM 256KBIT PAR 32SOIC
DigiKey Programmable: Not Verified
Memory Format: NVSRAM
Technology: NVSRAM (Non-Volatile SRAM)
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: 0°C ~ 70°C (TA)
Memory Type: Non-Volatile
Memory Size: 256Kbit
Mounting Type: Surface Mount
Package / Case: 32-SOIC (0.295", 7.50mm Width)
Packaging: Tube
Memory Organization: 32K x 8
Access Time: 45 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 45ns
Part Status: Obsolete
Supplier Device Package: 32-SOIC
Produkt ist nicht verfügbar
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STK14C88-NF25 DS_428_STK14C88.pdf
STK14C88-NF25
Hersteller: Infineon Technologies
Description: IC NVSRAM 256KBIT PAR 32SOIC
DigiKey Programmable: Not Verified
Supplier Device Package: 32-SOIC
Memory Format: NVSRAM
Technology: NVSRAM (Non-Volatile SRAM)
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: 0°C ~ 70°C (TA)
Memory Type: Non-Volatile
Memory Size: 256Kbit
Mounting Type: Surface Mount
Package / Case: 32-SOIC (0.295", 7.50mm Width)
Packaging: Tube
Memory Organization: 32K x 8
Access Time: 25 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 25ns
Part Status: Obsolete
Produkt ist nicht verfügbar
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STK14C88-NF35TR DS_428_STK14C88.pdf
STK14C88-NF35TR
Hersteller: Infineon Technologies
Description: IC NVSRAM 256KBIT PAR 32SOIC
DigiKey Programmable: Not Verified
Memory Organization: 32K x 8
Access Time: 35 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 35ns
Part Status: Obsolete
Supplier Device Package: 32-SOIC
Memory Format: NVSRAM
Technology: NVSRAM (Non-Volatile SRAM)
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: 0°C ~ 70°C (TA)
Memory Type: Non-Volatile
Memory Size: 256Kbit
Mounting Type: Surface Mount
Package / Case: 32-SOIC (0.295", 7.50mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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IGW40N60H3FKSA1 IGW40N60H3_Rev2_1G.pdf?folderId=db3a3043156fd5730115f56849b61941&fileId=db3a3043293a15c401293a9970bb0008
IGW40N60H3FKSA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 600V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
Supplier Device Package: PG-TO247-3-1
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 19ns/197ns
Switching Energy: 1.68mJ
Test Condition: 400V, 40A, 7.9Ohm, 15V
Gate Charge: 223 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 306 W
auf Bestellung 174 Stücke:
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3+9.81 EUR
30+5.47 EUR
120+4.53 EUR
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IRF9540NLPBF irf9540nspbf.pdf?fileId=5546d462533600a401535611d92a1dca
IRF9540NLPBF
Hersteller: Infineon Technologies
Description: MOSFET P-CH 100V 23A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 117mOhm @ 14A, 10V
Power Dissipation (Max): 3.1W (Ta), 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
Produkt ist nicht verfügbar
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CY2544QC011 download
CY2544QC011
Hersteller: Infineon Technologies
Description: IC CLOCK GENERATOR 24QFN
Packaging: Tray
Package / Case: 24-UFQFN Exposed Pad
Mounting Type: Surface Mount
Output: Clock
Frequency - Max: 166MHz
Type: Clock Generator
Input: LVCMOS, Crystal
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.25V ~ 3.6V
Ratio - Input:Output: 1:9
Differential - Input:Output: No/No
Supplier Device Package: 24-QFN (4x4)
PLL: Yes with Bypass
Divider/Multiplier: Yes/No
Part Status: Active
Number of Circuits: 4
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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F3L25R12W1T4B27BOMA1 Infineon-F3L25R12W1T4_B27-DS-v02_00-EN.pdf?fileId=5546d4625f2e26bc015f499b0c934063
F3L25R12W1T4B27BOMA1
Hersteller: Infineon Technologies
Description: MODULE IGBT 1200V EASY1B-2
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 25A
NTC Thermistor: Yes
Supplier Device Package: AG-EASY1B
Part Status: Active
Current - Collector (Ic) (Max): 45 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 215 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 1.45 nF @ 25 V
auf Bestellung 39 Stücke:
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1+84.17 EUR
24+57.66 EUR
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SPU02N60C3BKMA1 SPD_U02N60C3_Rev.2.4.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42d79214883
SPU02N60C3BKMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 1.8A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1.1A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 80µA
Supplier Device Package: PG-TO251-3-21
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 12.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 25 V
Produkt ist nicht verfügbar
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CY7C65640A-LFXC CY7C65640A.pdf
CY7C65640A-LFXC
Hersteller: Infineon Technologies
Description: IC USB HUB CONTROLLER HS 56VQFN
Packaging: Tube
Package / Case: 56-VFQFN Exposed Pad
Function: Hub Controller
Interface: USB
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3.15V ~ 3.45V
Protocol: USB
Standards: USB 2.0
Supplier Device Package: 56-QFN (8x8)
Part Status: Obsolete
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IRLB3036PBF infineon-irlb3036-datasheet-en.pdf
IRLB3036PBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 195A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 165A, 10V
Power Dissipation (Max): 380W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 11210 pF @ 50 V
auf Bestellung 1874 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+9.21 EUR
10+6.08 EUR
50+4.74 EUR
100+4.3 EUR
500+3.53 EUR
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IRFB4110PBF irfb4110pbf.pdf?fileId=5546d462533600a401535615a9571e0b
IRFB4110PBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 120A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 75A, 10V
Power Dissipation (Max): 370W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9620 pF @ 50 V
auf Bestellung 1159 Stücke:
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AnzahlPrivatkunde
3+7.52 EUR
10+4.93 EUR
50+3.81 EUR
100+3.45 EUR
500+2.82 EUR
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IGCM15F60GAXKMA1 Infineon-IGCM15F60GA-DS-v01_07-EN.pdf?fileId=5546d4624fb7fef2014fcb15c0597867
IGCM15F60GAXKMA1
Hersteller: Infineon Technologies
Description: IGBT IPM 600V 15A 24-PWRDIP MOD
Packaging: Tube
Package / Case: 24-PowerDIP Module (1.028", 26.10mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2000Vrms
Part Status: Active
Current: 15 A
Voltage: 600 V
auf Bestellung 285 Stücke:
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1+28.67 EUR
14+19.11 EUR
112+14.96 EUR
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IKCM15F60GAXKMA1 Infineon-IKCM15F60GA-DS-v01_02-EN.pdf?fileId=5546d4624fb7fef2014fcb43b29e78c1
IKCM15F60GAXKMA1
Hersteller: Infineon Technologies
Description: IGBT IPM 600V 15A 24-PWRDIP MOD
Packaging: Tube
Package / Case: 24-PowerDIP Module (1.028", 26.10mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2000Vrms
Part Status: Active
Current: 15 A
Voltage: 600 V
auf Bestellung 284 Stücke:
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1+26.26 EUR
14+20.06 EUR
28+19.06 EUR
112+17.56 EUR
252+16.92 EUR
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S29PL127J60BAW000 Infineon-S29PL-J_128-_128-_64-_32-MBIT_(8_8_4_2M_X_16_BIT)_3_V_FLASH_WITH_ENHANCED_VERSATILEIO-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed5806154f0&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_e
S29PL127J60BAW000
Hersteller: Infineon Technologies
Description: IC FLASH 128MBIT PARALLEL 80FBGA
DigiKey Programmable: Not Verified
Memory Organization: 8M x 16
Access Time: 60 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 60ns
Part Status: Obsolete
Supplier Device Package: 80-FBGA (8x11)
Memory Format: FLASH
Technology: FLASH - NOR
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -25°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 128Mbit
Mounting Type: Surface Mount
Package / Case: 80-VFBGA
Packaging: Tray
Produkt ist nicht verfügbar
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S29PL127J65BAW000 Infineon-S29PL-J_128-_128-_64-_32-MBIT_(8_8_4_2M_X_16_BIT)_3_V_FLASH_WITH_ENHANCED_VERSATILEIO-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed5806154f0&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_e
S29PL127J65BAW000
Hersteller: Infineon Technologies
Description: IC FLASH 128MBIT PARALLEL 80FBGA
DigiKey Programmable: Not Verified
Memory Organization: 8M x 16
Access Time: 65 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 65ns
Part Status: Obsolete
Supplier Device Package: 80-FBGA (8x11)
Memory Format: FLASH
Technology: FLASH - NOR
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -25°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 128Mbit
Mounting Type: Surface Mount
Package / Case: 80-VFBGA
Packaging: Tray
Produkt ist nicht verfügbar
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S29PL127J70BAW000 Infineon-S29PL-J_128-_128-_64-_32-MBIT_(8_8_4_2M_X_16_BIT)_3_V_FLASH_WITH_ENHANCED_VERSATILEIO-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed5806154f0&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_e
S29PL127J70BAW000
Hersteller: Infineon Technologies
Description: IC FLASH 128MBIT PARALLEL 80FBGA
DigiKey Programmable: Not Verified
Memory Format: FLASH
Technology: FLASH - NOR
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -25°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 128Mbit
Mounting Type: Surface Mount
Package / Case: 80-VFBGA
Packaging: Tray
Memory Organization: 8M x 16
Access Time: 70 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 70ns
Part Status: Obsolete
Supplier Device Package: 80-FBGA (8x11)
Produkt ist nicht verfügbar
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IRFB4115PBF irfb4115pbf.pdf?fileId=5546d462533600a401535615ba6a1e0f
IRFB4115PBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 150V 104A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 104A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 62A, 10V
Power Dissipation (Max): 380W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5270 pF @ 50 V
Produkt ist nicht verfügbar
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IRFB4127PBF irfb4127pbf.pdf?fileId=5546d462533600a401535615c2ef1e11
IRFB4127PBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 200V 76A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 76A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 44A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5380 pF @ 50 V
auf Bestellung 19 Stücke:
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AnzahlPrivatkunde
3+9.42 EUR
10+6.25 EUR
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TC1797512F180EFACKXUMA1 TC1797_DS_V1+3.pdf?fileId=db3a30431ed1d7b2011efeaa4ad16b6d
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 4MB FLASH 416BGA
Number of I/O: 221
Part Status: Obsolete
Supplier Device Package: PG-BGA-416-27
Peripherals: DMA, POR, WDT
Connectivity: ASC, CANbus, EBI/EMI, FlexRay, MLI, MSC, SSC
Voltage - Supply (Vcc/Vdd): 1.42V ~ 1.58V
Core Size: 32-Bit Single-Core
DigiKey Programmable: Not Verified
Data Converters: A/D 4x10b, 44x12b
Core Processor: TriCore™
EEPROM Size: 64K x 8
Program Memory Type: FLASH
Oscillator Type: External
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 224K x 8
Program Memory Size: 4MB (4M x 8)
Speed: 180MHz
Mounting Type: Surface Mount
Package / Case: 416-BGA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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IRFB4227PBF infineon-irfb4227-datasheet-en.pdf
IRFB4227PBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 200V 65A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 46A, 10V
Power Dissipation (Max): 330W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4600 pF @ 25 V
auf Bestellung 4834 Stücke:
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AnzahlPrivatkunde
4+6.51 EUR
10+4.24 EUR
50+3.26 EUR
100+2.95 EUR
500+2.39 EUR
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CY9AF142MBPMC-G-JNE2 Infineon-CY9A140NB_Series_32_Bit_Arm_Cortex_M3_FM3_Microcontroller-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee002d66576&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY9AF142MBPMC-G-JNE2
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 160KB FLASH 80LQFP
Packaging: Tray
Number of I/O: 66
Part Status: Active
Supplier Device Package: 80-LQFP (12x12)
Peripherals: LVD, POR, PWM, WDT
Connectivity: CSIO, EBI/EMI, I2C, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
Core Size: 32-Bit Single-Core
Data Converters: A/D 17x12b
Core Processor: ARM® Cortex®-M3
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 16K x 8
Program Memory Size: 160KB (160K x 8)
Speed: 40MHz
Mounting Type: Surface Mount
Package / Case: 80-LQFP
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IRIDIUMSLM9670TPM20TOBO1 IRIDIUMSLM9670TPM20TOBO1_Web.pdf
IRIDIUMSLM9670TPM20TOBO1
Hersteller: Infineon Technologies
Description: EVAL IRIDIUM SLM 9670 RASPBERRY
Packaging: Bulk
Function: Transceiver
Type: RF
Contents: Board(s)
Utilized IC / Part: SLM9670
Platform: Raspberry Pi
Part Status: Active
auf Bestellung 10 Stücke:
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AnzahlPrivatkunde
1+143.11 EUR
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IRIDIUMSLI9670TPM20TOBO1 IRIDIUMSLI9670TPM20TOBO1_Web.pdf
IRIDIUMSLI9670TPM20TOBO1
Hersteller: Infineon Technologies
Description: EVAL IRIDIUM SLI 9670 RASPBERRY
Part Status: Active
Platform: Raspberry Pi
Utilized IC / Part: SLI9670
Contents: Board(s)
Type: RF
Function: Transceiver
Packaging: Bulk
Produkt ist nicht verfügbar
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ICE3A0565ZXKLA1 CoolSET-F3.pdf?folderId=db3a304412b407950112b4182a3d24f8&fileId=db3a304412b407950112b428f6ba3f30
ICE3A0565ZXKLA1
Hersteller: Infineon Technologies
Description: IC OFFLINE SWITCH FLYBACK 7DIP
Power (Watts): 25 W
Part Status: Not For New Designs
Control Features: Soft Start
Voltage - Start Up: 15 V
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Supplier Device Package: PG-DIP-7-1
Voltage - Supply (Vcc/Vdd): 8.5V ~ 21V
Topology: Flyback
Output Isolation: Isolated
Voltage - Breakdown: 650V
Internal Switch(s): Yes
Frequency - Switching: 100kHz
Duty Cycle: 72%
Operating Temperature: -25°C ~ 130°C (TJ)
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Packaging: Tube
Produkt ist nicht verfügbar
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EVAL3KW2LLCP747TOBO1 Infineon-GeneralDescription_EVAL_3KW_2LLC_P7_47-ATI-v01_00-EN.pdf?fileId=5546d4625b3ca4ec015b5833f488044e
EVAL3KW2LLCP747TOBO1
Hersteller: Infineon Technologies
Description: EVAL BOARD ICE2QR2280Z XMC4400
Packaging: Bulk
Voltage - Output: 44V ~ 58V
Voltage - Input: 350V ~ 400V
Current - Output: 55A
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: ICE2QR2280Z, XMC4400
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1 Isolated Output
Part Status: Active
Power - Output: 3kW
Contents: Board(s)
Produkt ist nicht verfügbar
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EVAL600W12VLLCP7TOBO1 Infineon-ApplicationNote_EvaluationBoard_EVAL_600W_12V_LLC_P7-AN-v01_00-EN.pdf?fileId=5546d4625b10283a015b1e4f218b0035
EVAL600W12VLLCP7TOBO1
Hersteller: Infineon Technologies
Description: EVAL BOARD ICE2HS01G ICE2QR2280Z
Packaging: Bulk
Voltage - Output: 12V
Voltage - Input: 350V ~ 410V
Current - Output: 50A
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: ICE2HS01G, ICE2QR2280Z
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1 Isolated Output
Part Status: Active
Power - Output: 600W
Contents: Board(s)
Produkt ist nicht verfügbar
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EVAL800WPFCP7TOBO1 Infineon-ApplicationNote_EvaluationBoard_EVAL_800W_PFC_P7-AN-v01_00-EN.pdf?fileId=5546d4625b10283a015b141c54790da7
EVAL800WPFCP7TOBO1
Hersteller: Infineon Technologies
Description: EVAL BRD ICE2QR2280Z ICE3PCS01G
Packaging: Bulk
Function: Power Factor Correction
Type: Power Management
Utilized IC / Part: ICE2QR2280Z, ICE3PCS01G
Supplied Contents: Board(s)
Part Status: Active
Contents: Board(s)
Produkt ist nicht verfügbar
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IRF250P225 IR_PartNumberingSystem.pdf
IRF250P225
Hersteller: Infineon Technologies
Description: MOSFET N-CH 250V 69A TO247AC
Rds On (Max) @ Id, Vgs: 22mOhm @ 41A, 10V
Current - Continuous Drain (Id) @ 25°C: 69A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 4897 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247AC
Vgs(th) (Max) @ Id: 4V @ 270µA
Power Dissipation (Max): 313W (Tc)
Produkt ist nicht verfügbar
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IRF250P224 Infineon-IRF250P224-DS-v01_00-EN.pdf?fileId=5546d4625a888733015a8bb640137c6e
IRF250P224
Hersteller: Infineon Technologies
Description: MOSFET N-CH 250V 96A TO247AC
Input Capacitance (Ciss) (Max) @ Vds: 9915 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 203 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247AC
Vgs(th) (Max) @ Id: 4V @ 270µA
Power Dissipation (Max): 313W (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 58A, 10V
Current - Continuous Drain (Id) @ 25°C: 96A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Produkt ist nicht verfügbar
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DZ435N40KHPSA1 Infineon-DZ435N-DS-v03_02-EN.pdf?fileId=db3a3043243b5f170124e2ccd4426304
DZ435N40KHPSA1
Hersteller: Infineon Technologies
Description: DIODE GEN PURP 4KV 700A MODULE
Packaging: Tray
Current - Reverse Leakage @ Vr: 50 mA @ 4000 V
Voltage - Forward (Vf) (Max) @ If: 1.71 V @ 1200 A
Voltage - DC Reverse (Vr) (Max): 4000 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: Module
Current - Average Rectified (Io): 700A
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: Module
auf Bestellung 4 Stücke:
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AnzahlPrivatkunde
1+518.36 EUR
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IKW15T120FKSA1 fundamentals-of-power-semiconductors
IKW15T120FKSA1
Hersteller: Infineon Technologies
Description: IGBT NPT FS 1200V 30A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 140 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 15A
Supplier Device Package: PG-TO247-3-1
IGBT Type: NPT, Trench Field Stop
Td (on/off) @ 25°C: 50ns/520ns
Switching Energy: 2.7mJ
Test Condition: 600V, 15A, 56Ohm, 15V
Gate Charge: 85 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 110 W
Produkt ist nicht verfügbar
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CY9BF122LQN-G-AVE2 Infineon-CY9B120M_Series_32_Bit_Arm_Cortex_M3_FM3_Microcontroller-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0edfa79064e9&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY9BF122LQN-G-AVE2
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 160KB FLASH 64QFN
Packaging: Tray
Package / Case: 64-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 72MHz
Program Memory Size: 160KB (160K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 23x12b; D/A 2x10b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 64-QFN (9x9)
Part Status: Active
Number of I/O: 50
DigiKey Programmable: Not Verified
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2+16.95 EUR
10+13.19 EUR
25+12.23 EUR
100+11.21 EUR
260+10.7 EUR
520+10.4 EUR
1040+10.16 EUR
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CY9BF124KQN-G-AVE2 Infineon-CY9B120M_Series_32_Bit_Arm_Cortex_M3_FM3_Microcontroller-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0edfa79064e9&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY9BF124KQN-G-AVE2
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 288KB FLASH 48QFN
DigiKey Programmable: Not Verified
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 32K x 8
Program Memory Size: 288KB (288K x 8)
Speed: 72MHz
Mounting Type: Surface Mount
Package / Case: 48-VFQFN Exposed Pad
Packaging: Tray
Number of I/O: 35
Part Status: Active
Supplier Device Package: 48-QFN (7x7)
Peripherals: DMA, LVD, POR, PWM, WDT
Connectivity: CSIO, I2C, LINbus, UART/USART
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit Single-Core
Data Converters: A/D 14x12b; D/A 2x10b
Core Processor: ARM® Cortex®-M3
Produkt ist nicht verfügbar
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CY9BF122MPMC1-G-JNE2 Infineon-CY9B120M_Series_32_Bit_Arm_Cortex_M3_FM3_Microcontroller-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0edfa79064e9&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY9BF122MPMC1-G-JNE2
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 160KB FLASH 80LQFP
Number of I/O: 65
Part Status: Active
Supplier Device Package: 80-LQFP (14x14)
Peripherals: DMA, LVD, POR, PWM, WDT
Connectivity: CSIO, I2C, LINbus, UART/USART
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit Single-Core
Data Converters: A/D 26x12b; D/A 2x10b
Core Processor: ARM® Cortex®-M3
DigiKey Programmable: Not Verified
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 16K x 8
Program Memory Size: 160KB (160K x 8)
Speed: 72MHz
Mounting Type: Surface Mount
Package / Case: 80-LQFP
Packaging: Tray
Produkt ist nicht verfügbar
Mindestbestellmenge: 900 Stücke
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FZ750R65KE3NOSA1 Infineon-FZ750R65KE3-DS-v03_01-EN.pdf?fileId=db3a304325afd6e00126461fd3936974
FZ750R65KE3NOSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 6500V 750A A-IHV190-6
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -50°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 750A
NTC Thermistor: No
Supplier Device Package: Module
Part Status: Active
Current - Collector (Ic) (Max): 750 A
Voltage - Collector Emitter Breakdown (Max): 6500 V
Power - Max: 14500 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 205 nF @ 25 V
auf Bestellung 1 Stücke:
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AnzahlPrivatkunde
1+5226.08 EUR
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IPW60R099C6FKSA1 IPB60R099C6_2_1.pdf?folderId=db3a3043163797a6011638933eda014b&fileId=db3a30432313ff5e012394d25bd3069e
IPW60R099C6FKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 37.9A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37.9A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 18.1A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1.21mA
Supplier Device Package: PG-TO247-3-1
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 119 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2660 pF @ 100 V
auf Bestellung 445 Stücke:
Lieferzeit 10-14 Tag (e)
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2+14.6 EUR
30+8.43 EUR
120+7.07 EUR
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BSC019N02KSGAUMA1 BSC019N02KS+G+Rev1.2.pdf?folderId=db3a3043163797a6011637c0dc9c0001&fileId=db3a3043163797a6011637c16cdf0002
BSC019N02KSGAUMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 20V 30A/100A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.95mOhm @ 50A, 4.5V
Power Dissipation (Max): 2.8W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 1.2V @ 350µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 10 V
Produkt ist nicht verfügbar
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IPP034N08N5AKSA1 Infineon-IPP034N08N5-DS-v02_00-EN.pdf?fileId=5546d4624ad04ef9014ade84c8b17b40
IPP034N08N5AKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 80V 120A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 100A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 108µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6240 pF @ 40 V
auf Bestellung 209 Stücke:
Lieferzeit 10-14 Tag (e)
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3+7.1 EUR
50+3.59 EUR
100+3.25 EUR
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S6BP203A8FST2B20A
Hersteller: Infineon Technologies
Description: IC REG BCK-BST 3.3V 2.4A 16TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.173", 4.40mm Width) Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Up/Step-Down
Current - Output: 2.4A
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Positive
Frequency - Switching: 200kHz ~ 2.1MHz
Voltage - Input (Max): 42V
Topology: Buck-Boost
Supplier Device Package: 16-TSSOP
Synchronous Rectifier: Yes
Voltage - Input (Min): 2.5V
Voltage - Output (Min/Fixed): 3.3V
Part Status: Last Time Buy
Produkt ist nicht verfügbar
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IRLB4030PBF irlb4030pbf.pdf?fileId=5546d462533600a4015356604640258d
IRLB4030PBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 180A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 110A, 10V
Power Dissipation (Max): 370W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 11360 pF @ 50 V
auf Bestellung 8041 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+9.53 EUR
10+6.31 EUR
50+4.93 EUR
100+4.49 EUR
500+3.71 EUR
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IRLB8748PBF infineon-irlb8748-datasheet-en.pdf
IRLB8748PBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 92A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 92A (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 40A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 50µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2139 pF @ 15 V
auf Bestellung 14320 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
8+2.67 EUR
50+1.25 EUR
100+1.12 EUR
500+0.87 EUR
1000+0.8 EUR
2000+0.76 EUR
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IDWD40G120C5XKSA1 Infineon-IDWD40G120C5-DS-v02_00-EN.pdf?fileId=5546d462689a790c016933d56ffd548f
IDWD40G120C5XKSA1
Hersteller: Infineon Technologies
Description: DIODE SIC 1.2KV 110A PGTO247-2
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 2592pF @ 1V, 1MHz
Current - Average Rectified (Io): 110A
Supplier Device Package: PG-TO247-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 40 A
Current - Reverse Leakage @ Vr: 332 µA @ 1200 V
auf Bestellung 260 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+25.74 EUR
30+15.58 EUR
60+14.36 EUR
120+13.35 EUR
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IRFZ44ESTRRPBF irfz44espbf.pdf?fileId=5546d462533600a40153563b2c662208
IRFZ44ESTRRPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 48A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 29A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1360 pF @ 25 V
Produkt ist nicht verfügbar
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CY7C64316-16LKXCT download
CY7C64316-16LKXCT
Hersteller: Infineon Technologies
Description: IC MCU USB ENCORE CONTROL 16QFN
Packaging: Tape & Reel (TR)
Package / Case: 16-UFQFN
Mounting Type: Surface Mount
Interface: I²C, SPI, USB
RAM Size: 2K x 8
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3V ~ 5.5V
Controller Series: CY7C643xx
Program Memory Type: FLASH (32kB)
Applications: USB Microcontroller
Core Processor: M8C
Supplier Device Package: 16-QFN (3x3)
Part Status: Last Time Buy
Number of I/O: 11
Produkt ist nicht verfügbar
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ETD540N22P60HPSA1 Infineon-DS_eTT540N22P60-DS-v03_01-EN.pdf?fileId=5546d46266f85d6301670d4da56a366a
ETD540N22P60HPSA1
Hersteller: Infineon Technologies
Description: SCR MODULE 2.2KV 700A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 135°C (TC)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 16300A @ 50Hz
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 542 A
Voltage - Gate Trigger (Vgt) (Max): 2.2 V
Part Status: Active
Current - On State (It (RMS)) (Max): 700 A
Voltage - Off State: 2.2 kV
auf Bestellung 2 Stücke:
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AnzahlPrivatkunde
1+393.03 EUR
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SPP20N60CFDXKSA1 SPP20N60CFD_Rev.2.4.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42bffe24649
SPP20N60CFDXKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 20.7A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20.7A (Tc)
Rds On (Max) @ Id, Vgs: 220mOhm @ 13.1A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: PG-TO220-3-1
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V
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AIKP20N60CTAKSA1 Infineon-AIKP20N60CT-DS-v02_01-EN.pdf?fileId=5546d4625c167129015c5382b0927c97
AIKP20N60CTAKSA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 600V 40A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 20A
Supplier Device Package: PG-TO220-3-1
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 18ns/199ns
Switching Energy: 310µJ (on), 460µJ (off)
Test Condition: 400V, 20A, 12Ohm, 15V
Gate Charge: 120 nC
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 156 W
Produkt ist nicht verfügbar
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