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FP50R12W2T7PBPSA1 Infineon Technologies Description: LOW POWER EASY
Input Capacitance (Cies) @ Vce: 11.1 nF @ 25 V
Current - Collector Cutoff (Max): 5 µA
Power - Max: 20 mW
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 50 A
Part Status: Active
IGBT Type: Trench Field Stop
Supplier Device Package: AG-EASY2B
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 35A
Operating Temperature: -40°C ~ 175°C (TJ)
Configuration: Three Phase Inverter
Input: Three Phase Bridge Rectifier
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
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FP50R12N2T7B16BPSA1 Infineon Technologies Description: LOW POWER ECONO
Part Status: Active
Packaging: Tray
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FP50R12N2T4PB81BPSA2 Infineon Technologies Description: LOW POWER ECONO
Part Status: Active
Packaging: Tray
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FP50R12N2T4B16BPSA1 Infineon Technologies Description: LOW POWER ECONO AG-ECONO2B-711
Part Status: Active
Packaging: Tray
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FP50R12N2T4B86BPSA1 Infineon Technologies Description: LOW POWER ECONO
Part Status: Active
Packaging: Tray
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PVT422PBF PVT422PBF Infineon Technologies pvt422.pdf?fileId=5546d462533600a401535684473f2973 description Description: SSR RELAY SPST-NO 120MA 0-400V
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Through Hole
Voltage - Input: 1.2VDC
Circuit: SPST-NO (1 Form A) x 2
Termination Style: PC Pin
Load Current: 120 mA
Supplier Device Package: 8-DIP
Part Status: Active
Voltage - Load: 0 V ~ 400 V
On-State Resistance (Max): 35 Ohms
Operating Temperature: -40°C ~ 85°C
Approval Agency: UL
Relay Type: Photo-Coupled Relay (Photorelay)
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2+14.39 EUR
10+12.83 EUR
25+12.25 EUR
50+11.83 EUR
100+11.42 EUR
250+10.91 EUR
500+10.53 EUR
1000+10.17 EUR
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PVT422SPBF PVT422SPBF Infineon Technologies pvt422.pdf?fileId=5546d462533600a401535684473f2973 description Description: SSR RELAY SPST-NO 120MA 0-400V
Packaging: Tube
Package / Case: 8-SMD (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.2VDC
Circuit: SPST-NO (1 Form A) x 2
Termination Style: Gull Wing
Load Current: 120 mA
Supplier Device Package: 8-SMD
Part Status: Active
Voltage - Load: 0 V ~ 400 V
On-State Resistance (Max): 35 Ohms
Operating Temperature: -40°C ~ 85°C
Approval Agency: UL
Relay Type: Photo-Coupled Relay (Photorelay)
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2+14.39 EUR
10+12.83 EUR
25+12.25 EUR
50+11.83 EUR
100+11.42 EUR
250+10.91 EUR
500+10.53 EUR
1000+10.17 EUR
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S25FL128SAGBHI303 S25FL128SAGBHI303 Infineon Technologies Infineon-S25FL128S_S25FL256S_128_Mb_(16_MB)_256_Mb_(32_MB)_3.0V_SPI_Flash_Memory-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecfb6a64a17 Description: IC FLASH 128MBIT SPI/QUAD 24BGA
Packaging: Tape & Reel (TR)
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (6x8)
Part Status: Active
Memory Interface: SPI - Quad I/O
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
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TZ800N16KOFHPSA3 TZ800N16KOFHPSA3 Infineon Technologies Infineon-TZ800N-DS-v03_05-EN.pdf?fileId=db3a304412b407950112b42f8b8e4c29 Description: SCR MODULE 1.6KV 1500A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 500 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 35000A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 819 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Part Status: Active
Current - On State (It (RMS)) (Max): 1500 A
Voltage - Off State: 1.6 kV
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SPW20N60C3FKSA1 SPW20N60C3FKSA1 Infineon Technologies SPW20N60C3_Rev.2.4.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42e3702497f Description: MOSFET N-CH 650V 20.7A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20.7A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 13.1A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 1mA
Supplier Device Package: PG-TO247-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V
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30+6.63 EUR
120+5.51 EUR
510+4.76 EUR
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SPP20N60S5XKSA1 SPP20N60S5XKSA1 Infineon Technologies SPP20N60S5_rev2.8_2009-12-01.pdf Description: HIGH POWER_LEGACY
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 13A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 1mA
Supplier Device Package: PG-TO220-3-1
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 25 V
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3+9.87 EUR
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SPP20N60C3XKSA1 SPP20N60C3XKSA1 Infineon Technologies SPx20N60C3.pdf Description: MOSFET N-CH 600V 20.7A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20.7A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 13.1A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 1mA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V
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3+8.54 EUR
50+4.38 EUR
100+3.97 EUR
500+3.27 EUR
1000+3.05 EUR
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IKP20N60H3XKSA1 IKP20N60H3XKSA1 Infineon Technologies IKP20N60H3_rev1.1G.pdf?folderId=db3a30431c69a49d011c6f86019b00a1&fileId=db3a30432b16d655012b199c4f6a2d17 Description: IGBT TRENCH FS 600V 40A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 112 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 20A
Supplier Device Package: PG-TO220-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 16ns/194ns
Switching Energy: 690µJ
Test Condition: 400V, 20A, 14.6Ohm, 15V
Gate Charge: 120 nC
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 170 W
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FF600R12IE4BOSA1 FF600R12IE4BOSA1 Infineon Technologies Infineon-FF600R12IE4-DS-v02_04-en.pdf?fileId=db3a30431f848401011febaeac813ece Description: IGBT MOD 1200V 600A 3350W MOD
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 600A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 600 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 3350 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 37 nF @ 25 V
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FF600R12IP4BOSA1 FF600R12IP4BOSA1 Infineon Technologies Infineon-FF600R12IP4-DS-v02_04-en_de.pdf?fileId=db3a30431f848401011feb94350f3eb9 Description: IGBT MOD 1200V 600A 3350W
Input Capacitance (Cies) @ Vce: 37 nF @ 25 V
Current - Collector Cutoff (Max): 5 mA
Power - Max: 3350 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 600 A
Part Status: Active
IGBT Type: Trench Field Stop
Supplier Device Package: Module
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 600A
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: Half Bridge
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
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FF600R12ME4B72BOSA1 FF600R12ME4B72BOSA1 Infineon Technologies Infineon-FF600R12ME4_B72-DS-v03_00-EN.pdf?fileId=5546d4625e763904015e949c2d312e12 Description: IGBT MODULE 1200V 1200A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 600A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 1200 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 37 nF @ 25 V
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FF650R17IE4BOSA1 FF650R17IE4BOSA1 Infineon Technologies Infineon-FF650R17IE4-DS-v03_03-en_de.pdf?fileId=db3a30431ff9881501201dcfe2a54986 Description: IGBT MODULE 1700V 4150W MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 650A
NTC Thermistor: Yes
Supplier Device Package: Module
Part Status: Active
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 4150 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 54 nF @ 25 V
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FF600R12KE4BOSA1 FF600R12KE4BOSA1 Infineon Technologies Infineon-FF600R12KE4-DS-v02_02-EN.pdf?fileId=5546d46254e133b401550b1aeaef35e0 Description: IGBT MODULE 1200V 600A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 600A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 600 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 38 nF @ 25 V
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FF600R12ME4BOSA1 FF600R12ME4BOSA1 Infineon Technologies Infineon-FF600R12ME4-DS-v02_02-en_de.pdf?fileId=db3a30432a40a650012a40f9eac70002 Description: IGBT MODULE 1200V 4050W MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 600A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Not For New Designs
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 4050 W
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 37 nF @ 25 V
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S25FS512SAGBHV213 S25FS512SAGBHV213 Infineon Technologies Infineon-S25FS512S_512_Mb_1.8_V_Serial_Peripheral_Interface_with_Multi-I_O_Non-Volatile_Flash-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed681a356fe&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en Description: IC FLASH 512MBIT SPI/QUAD 24BGA
Memory Organization: 64M x 8
Memory Interface: SPI - Quad I/O, QPI
Part Status: Active
Supplier Device Package: 24-BGA (8x6)
Memory Format: FLASH
Clock Frequency: 133 MHz
Technology: FLASH - NOR
Voltage - Supply: 1.7V ~ 2V
Operating Temperature: -40°C ~ 105°C (TA)
Memory Type: Non-Volatile
Memory Size: 512Mbit
Mounting Type: Surface Mount
Package / Case: 24-TBGA
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
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TLE4983CHTNE6747HAMA1 Infineon Technologies fundamentals-of-power-semiconductors Description: MAG SWITCH SPEED SENSOR 3SSO
Qualification: AEC-Q100
Grade: Automotive
Part Status: Active
Packaging: Bulk
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CY7C107D-10VXI CY7C107D-10VXI Infineon Technologies Infineon-CY7C107D_CY7C1007D_1-Mbit_(1M_x_1)_Static_RAM-DataSheet-v12_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebf2ac23343&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC SRAM 1MBIT PARALLEL 28SOJ
DigiKey Programmable: Not Verified
Memory Organization: 1M x 1
Access Time: 10 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 10ns
Part Status: Active
Supplier Device Package: 28-SOJ
Memory Format: SRAM
Technology: SRAM - Asynchronous
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Volatile
Memory Size: 1Mbit
Mounting Type: Surface Mount
Package / Case: 28-BSOJ (0.400", 10.16mm Width)
Packaging: Tube
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FF2400RB12IP7PBPSA1 FF2400RB12IP7PBPSA1 Infineon Technologies Description: PP IHM I XHP 1 7KV AG-PRIME3+-71
Voltage - Collector Emitter Breakdown (Max): 750 V
Current - Collector (Ic) (Max): 2400 A
Part Status: Active
NTC Thermistor: No
Configuration: 2 Independent
Input: Standard
Packaging: Tray
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1+2817.16 EUR
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IRLSL4030PBF IRLSL4030PBF Infineon Technologies irls4030pbf.pdf?fileId=5546d462533600a401535671e1fd2715 Description: MOSFET N-CH 100V 180A TO262
Input Capacitance (Ciss) (Max) @ Vds: 11360 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 4.5 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-262
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 370W (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 110A, 10V
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Packaging: Tube
Produkt ist nicht verfügbar
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1EDS20I12SVXUMA1 1EDS20I12SVXUMA1 Infineon Technologies Infineon-1EDS20I12SV-DS-v00_73-en.pdf?fileId=5546d46145f1f3a40145faf0aa200fc1 Description: DIGITAL ISO 5KV 1CH GATE DVR
Number of Channels: 1
Part Status: Active
Voltage - Isolation: 5000Vrms
Technology: Magnetic Coupling
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
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1000+9.02 EUR
2000+8.83 EUR
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IKW40T120FKSA1 IKW40T120FKSA1 Infineon Technologies fundamentals-of-power-semiconductors Description: IGBT NPT FS 1200V 75A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 240 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 40A
Supplier Device Package: PG-TO247-3-1
IGBT Type: NPT, Trench Field Stop
Td (on/off) @ 25°C: 48ns/480ns
Switching Energy: 6.5mJ
Test Condition: 600V, 40A, 15Ohm, 15V
Gate Charge: 203 nC
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 105 A
Power - Max: 270 W
Produkt ist nicht verfügbar
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FZ400R12KS4HOSA1 FZ400R12KS4HOSA1 Infineon Technologies Infineon-FZ400R12KS4-DS-v03_04-en_de.pdf?fileId=db3a304412b407950112b4336f045caa Description: IGBT MOD 1200V 510A 2500W MOD
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 510 A
Part Status: Active
Supplier Device Package: Module
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 400A
Operating Temperature: -40°C ~ 125°C
Configuration: Single
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
Input Capacitance (Cies) @ Vce: 26 nF @ 25 V
Current - Collector Cutoff (Max): 5 mA
Power - Max: 2500 W
Produkt ist nicht verfügbar
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SPW35N60CFDFKSA1 SPW35N60CFDFKSA1 Infineon Technologies SPW35N60CFD_Rev.1.2.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42c05a24651 Description: MOSFET N-CH 600V 34.1A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34.1A (Tc)
Rds On (Max) @ Id, Vgs: 118mOhm @ 21.6A, 10V
Power Dissipation (Max): 313W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1.9mA
Supplier Device Package: PG-TO247-3-1
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 212 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5060 pF @ 25 V
auf Bestellung 1139 Stücke:
Lieferzeit 10-14 Tag (e)
1+21.17 EUR
30+12.6 EUR
120+10.72 EUR
510+9.34 EUR
1020+9.32 EUR
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P2000DE45X168HPSA1 Infineon Technologies Description: PRESS PACK IGBT
Packaging: Tray
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FZ400R12KE3HOSA1 FZ400R12KE3HOSA1 Infineon Technologies Infineon-FZ400R12KE3-DS-v03_02-en_de.pdf?fileId=db3a304412b407950112b433be115d71 Description: IGBT MOD 1200V 650A 2250W MOD
Input Capacitance (Cies) @ Vce: 28 nF @ 25 V
Current - Collector Cutoff (Max): 5 mA
Power - Max: 2250 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 650 A
Part Status: Active
Supplier Device Package: Module
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 400A
Operating Temperature: -40°C ~ 125°C
Configuration: Single
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
auf Bestellung 4 Stücke:
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FZ400R12KP4HOSA1 FZ400R12KP4HOSA1 Infineon Technologies Infineon-FZ400R12KP4-DS-v02_02-en_de.pdf?fileId=db3a304320896aa20120c8ca11e73293 Description: IGBT MOD 1200V 400A 2400W
Input Capacitance (Cies) @ Vce: 28 nF @ 25 V
Current - Collector Cutoff (Max): 5 mA
Power - Max: 2400 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 400 A
Part Status: Active
IGBT Type: Trench Field Stop
Supplier Device Package: Module
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 400A
Operating Temperature: -40°C ~ 125°C
Configuration: Single
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
auf Bestellung 5 Stücke:
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FZ400R12KE3B1HOSA1 FZ400R12KE3B1HOSA1 Infineon Technologies Infineon-FZ400R12KE3_B1-DS-v03_02-en_de.pdf?fileId=db3a304412b407950112b433c1965d75 Description: IGBT MOD 1200V 650A 2250W MOD
Input Capacitance (Cies) @ Vce: 28 nF @ 25 V
Current - Collector Cutoff (Max): 5 mA
Power - Max: 2250 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 650 A
Part Status: Active
Supplier Device Package: Module
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 400A
Operating Temperature: -40°C ~ 125°C
Configuration: Single
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
auf Bestellung 2 Stücke:
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FZ600R12KE4HOSA1 FZ600R12KE4HOSA1 Infineon Technologies Infineon-FZ600R12KE4-DS-v02_01-en_de.pdf?fileId=db3a30431f848401011fb7bb4ece5939 Description: IGBT MOD 1200V 600A 3000W MOD
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 600A
NTC Thermistor: No
Supplier Device Package: Module
Part Status: Active
Current - Collector (Ic) (Max): 600 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 3000 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 1.7 nF @ 25 V
auf Bestellung 229 Stücke:
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1+251.44 EUR
10+208.2 EUR
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FZ600R17KE3HOSA1 FZ600R17KE3HOSA1 Infineon Technologies Infineon-FZ600R17KE3-DS-v03_00-en_de.pdf?fileId=db3a304412b407950112b43044fb4fda Description: IGBT MOD 1700V 840A 3150W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 600A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 840 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 3150 W
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 54 nF @ 25 V
auf Bestellung 12 Stücke:
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FZ600R17KE4HOSA1 FZ600R17KE4HOSA1 Infineon Technologies Infineon-FZ600R17KE4-DS-v02_02-en_de.pdf?fileId=db3a3043293a15c401294a1c37557de9 Description: IGBT MOD 1700V 1200A 3350W MOD
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 600A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 1200 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 3350 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 49 nF @ 25 V
auf Bestellung 138 Stücke:
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1+301.99 EUR
10+258.38 EUR
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FZ600R12KS4HOSA1 FZ600R12KS4HOSA1 Infineon Technologies Infineon-FZ600R12KS4-DS-v03_01-en_de.pdf?fileId=db3a304412b407950112b43370005cae Description: IGBT MOD 1200V 700A 3900W MOD
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 3.75V @ 15V, 600A
NTC Thermistor: No
Supplier Device Package: Module
Part Status: Active
Current - Collector (Ic) (Max): 700 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 3900 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 39 nF @ 25 V
auf Bestellung 44 Stücke:
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1+317.03 EUR
10+273.56 EUR
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FZ600R65KE3NOSA1 FZ600R65KE3NOSA1 Infineon Technologies Infineon-FZ600R65KE3-DS-v03_00-EN.pdf?fileId=db3a30432c64a60d012cbbecaa6f0356 Description: IGBT MOD 6500V 600A 2400W
Current - Collector (Ic) (Max): 600 A
Part Status: Active
Supplier Device Package: Module
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 600A
Operating Temperature: -50°C ~ 125°C
Configuration: Single
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
Input Capacitance (Cies) @ Vce: 160 nF @ 25 V
Current - Collector Cutoff (Max): 5 mA
Power - Max: 2400 W
Voltage - Collector Emitter Breakdown (Max): 6500 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FZ600R17KE3S4HOSA1 FZ600R17KE3S4HOSA1 Infineon Technologies Infineon-FZ600R17KE3_S4-DS-v03_00-en_de.pdf?fileId=db3a3043416e106e014173bd63163a3b Description: IGBT MOD 1700V 1200A 3150W
Input Capacitance (Cies) @ Vce: 54 nF @ 25 V
Current - Collector Cutoff (Max): 3 mA
Power - Max: 3150 W
Voltage - Collector Emitter Breakdown (Max): 1700 V
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 1200 A
Part Status: Active
Supplier Device Package: Module
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 600A
Operating Temperature: -40°C ~ 125°C
Configuration: Single
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
Produkt ist nicht verfügbar
 Mindestbestellmenge: 10 Stücke
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IRLB8314PBF IRLB8314PBF Infineon Technologies irlb8314pbf.pdf?fileId=5546d462533600a4015356604d6f258f Description: MOSFET N-CH 30V 171A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 5050 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 2.2V @ 100µA
Power Dissipation (Max): 125W (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 68A, 10V
Current - Continuous Drain (Id) @ 25°C: 171A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
auf Bestellung 897 Stücke:
Lieferzeit 10-14 Tag (e)
8+2.73 EUR
50+1.29 EUR
100+1.14 EUR
500+0.9 EUR
Mindestbestellmenge: 8 Stücke
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CY95F778ENPMC1-G-103UNE2 CY95F778ENPMC1-G-103UNE2 Infineon Technologies 00204700MB95710LSeriesMB95770LSeriesNew8FX8bitMicrocontrollers.pdf Description: IC MCU 8BIT 60KB 64LQFP
Number of I/O: 55
Part Status: Active
Supplier Device Package: 64-LQFP (10x10)
Peripherals: LCD, LVD, POR, PWM, WDT
Connectivity: I2C, SIO, UART/USART
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Core Size: 8-Bit
Data Converters: A/D 8x8/10b
Core Processor: F²MC-8FX
Program Memory Type: FLASH
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 2K x 8
Program Memory Size: 60KB (60K x 8)
Speed: 16.25MHz
Mounting Type: Surface Mount
Package / Case: 64-LQFP
Packaging: Tray
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1600 Stücke
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XMC1100T016F0008ABXUMA1 XMC1100T016F0008ABXUMA1 Infineon Technologies Infineon-xmc1100_AB-DS-v01_06-EN.pdf?fileId=5546d4624a0bf290014a4bdaff9325bd&ack=t Description: IC MCU 32BIT 8KB FLASH 16TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 6x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-TSSOP-16-8
Part Status: Active
Number of I/O: 11
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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XMC1100T016F0008ABXUMA1 XMC1100T016F0008ABXUMA1 Infineon Technologies Infineon-xmc1100_AB-DS-v01_06-EN.pdf?fileId=5546d4624a0bf290014a4bdaff9325bd&ack=t Description: IC MCU 32BIT 8KB FLASH 16TSSOP
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 6x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-TSSOP-16-8
Part Status: Active
Number of I/O: 11
DigiKey Programmable: Not Verified
auf Bestellung 295 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.86 EUR
10+2.84 EUR
25+2.59 EUR
100+2.31 EUR
250+2.18 EUR
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XMC1100T016X0032ABXUMA1 XMC1100T016X0032ABXUMA1 Infineon Technologies Infineon-xmc1100_AB-DS-v01_06-EN.pdf?fileId=5546d4624a0bf290014a4bdaff9325bd&ack=t Description: IC MCU 32BIT 32KB FLASH 16TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 6x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-TSSOP-16-8
Part Status: Active
Number of I/O: 11
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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CY8C6347BZI-BLD44 CY8C6347BZI-BLD44 Infineon Technologies infineon-psoc-6-mcu-cy8c63x6-cy8c63x7-datasheet-psoc-63-mcu-with-bluetooth-le-datasheet-en.pdf Description: IC MCU 32BIT 1MB FLASH 124VFBGA
Packaging: Tray
Package / Case: 124-VFBGA
Mounting Type: Surface Mount
Speed: 100MHz, 150MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 288K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
Data Converters: A/D 16x10b SAR, 16x12b Sigma-Delta; D/A 2x7b, 1x8/12b
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
Connectivity: FIFO, I2C, IrDA, Microwire, SmartCard, SPI, SSP, UART/USART, USB
Peripherals: Brown-out Detect/Reset, CapSense, Crypto - AES, DMA, I2S, LCD, LVD, POR, PWM, RSA, SHA, Temp Sensor, TRNG, WDT
Supplier Device Package: 124-VFBGA (9x9)
Part Status: Active
Number of I/O: 84
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY8C6347BZI-BLD43T CY8C6347BZI-BLD43T Infineon Technologies infineon-psoc-6-mcu-cy8c63x6-cy8c63x7-datasheet-psoc-63-mcu-with-bluetooth-le-datasheet-en.pdf Description: IC MCU 32BIT 1MB FLASH 116BGA
Packaging: Tape & Reel (TR)
Package / Case: 116-WFBGA
Mounting Type: Surface Mount
Speed: 100MHz, 150MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 288K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
Data Converters: A/D 16x10b SAR, 16x12b Sigma-Delta; D/A 2x7b, 1x8/12b
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
Connectivity: FIFO, I2C, IrDA, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, Crypto - AES, DMA, I2S, LCD, LVD, POR, PWM, RSA, SHA, Temp Sensor, TRNG, WDT
Supplier Device Package: 116-BGA (5.2x6.4)
Part Status: Active
Number of I/O: 78
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3500 Stücke
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SPP11N60CFDXKSA1 SPP11N60CFDXKSA1 Infineon Technologies SPP11N60CFD_Rev.2.4.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42bfcec4645 Description: MOSFET N-CH 650V 11A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 440mOhm @ 7A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 5V @ 500µA
Supplier Device Package: PG-TO220-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
Produkt ist nicht verfügbar
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SPP11N60S5XKSA1 SPP11N60S5XKSA1 Infineon Technologies SPP_I11N60S5_Rev.2.4.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42d978048a7 Description: LOW POWER_LEGACY
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 7A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 500µA
Supplier Device Package: PG-TO220-3-1
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1460 pF @ 25 V
Produkt ist nicht verfügbar
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CY8C4747LQS-S453 CY8C4747LQS-S453 Infineon Technologies Infineon-Automotive_PSoC_4700_S_Plus-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c82ce56640183676e703c4498 Description: IC MCU 32BIT 128KB FLASH 40QFN
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 8K x 8
Program Memory Size: 128KB (128K x 8)
Speed: 48MHz
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 40-UFQFN Exposed Pad
Packaging: Tray
Number of I/O: 34
Part Status: Active
Supplier Device Package: 40-QFN (6x6)
Peripherals: Brown-out Detect/Reset, CapSense, DMA, POR, PWM, WDT
Connectivity: I2C, IrDA, LINbus, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Core Size: 32-Bit
Data Converters: A/D 16x10b, 16x12b SAR; D/A 2x7b
Core Processor: ARM® Cortex®-M0+
Program Memory Type: FLASH
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Grade: Automotive
auf Bestellung 2450 Stücke:
Lieferzeit 10-14 Tag (e)
2+15.73 EUR
10+12.25 EUR
25+11.38 EUR
100+10.42 EUR
490+10.15 EUR
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CY8C4147LQS-S453T CY8C4147LQS-S453T Infineon Technologies Infineon-Automotive_PSoC_4_PSoC_4100S_Plus_Datasheet_Programmable_System-on-Chip_(PSoC)-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee7ff0b70e8 Description: IC MCU 32BIT 128KB FLASH 40QFN
Number of I/O: 34
Part Status: Active
Supplier Device Package: 40-QFN (6x6)
Peripherals: Brown-out Detect/Reset, CapSense, DMA, LCD, POR, PWM, Temp Sensor, WDT
Connectivity: FIFO, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Packaging: Tape & Reel (TR)
Qualification: AEC-Q100
DigiKey Programmable: Not Verified
Grade: Automotive
Core Size: 32-Bit
Data Converters: A/D 16x10b, 20x12b SAR
Core Processor: ARM® Cortex®-M0+
Program Memory Type: FLASH
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 16K x 8
Program Memory Size: 128KB (128K x 8)
Speed: 24MHz
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 40-UFQFN Exposed Pad
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2500 Stücke
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CY8C4146LQS-S453T CY8C4146LQS-S453T Infineon Technologies Infineon-Automotive_PSoC_4_PSoC_4100S_Plus_Datasheet_Programmable_System-on-Chip_(PSoC)-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee7ff0b70e8 Description: IC MCU 32BIT 64KB FLASH 40QFN
RAM Size: 8K x 8
Program Memory Size: 64KB (64K x 8)
Speed: 48MHz
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 40-UFQFN Exposed Pad
Packaging: Tape & Reel (TR)
Qualification: AEC-Q100
DigiKey Programmable: Not Verified
Grade: Automotive
Number of I/O: 34
Part Status: Active
Supplier Device Package: 40-QFN (6x6)
Peripherals: Brown-out Detect/Reset, CapSense, DMA, LCD, POR, PWM, Temp Sensor, WDT
Connectivity: FIFO, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Core Size: 32-Bit
Data Converters: A/D 16x10b, 16x12b SAR; D/A 2x7b
Core Processor: ARM® Cortex®-M0+
Program Memory Type: FLASH
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 105°C (TA)
Produkt ist nicht verfügbar
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CY8C4147LQS-S453 CY8C4147LQS-S453 Infineon Technologies Infineon-Automotive_PSoC_4_PSoC_4100S_Plus_Datasheet_Programmable_System-on-Chip_(PSoC)-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee7ff0b70e8 Description: IC MCU 32BIT 128KB FLASH 40QFN
Qualification: AEC-Q100
DigiKey Programmable: Not Verified
Grade: Automotive
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 16K x 8
Program Memory Size: 128KB (128K x 8)
Speed: 24MHz
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 40-UFQFN Exposed Pad
Packaging: Tray
Number of I/O: 34
Part Status: Active
Supplier Device Package: 40-QFN (6x6)
Peripherals: Brown-out Detect/Reset, CapSense, DMA, LCD, POR, PWM, Temp Sensor, WDT
Connectivity: FIFO, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Core Size: 32-Bit
Data Converters: A/D 16x10b, 20x12b SAR
Core Processor: ARM® Cortex®-M0+
Program Memory Type: FLASH
Oscillator Type: External, Internal
Produkt ist nicht verfügbar
 Mindestbestellmenge: 4900 Stücke
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CY8C4126LQS-S453 CY8C4126LQS-S453 Infineon Technologies Infineon-Automotive_PSoC_4_PSoC_4100S_Plus_Datasheet_Programmable_System-on-Chip_(PSoC)-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee7ff0b70e8 Description: IC MCU 32BIT 64KB FLASH 40QFN
Packaging: Tray
Package / Case: 40-UFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Speed: 24MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b, 20x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: FIFO, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, DMA, LCD, POR, PWM, Temp Sensor, WDT
Supplier Device Package: 40-QFN (6x6)
Grade: Automotive
Part Status: Active
Number of I/O: 34
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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CY8C4126LQS-S453T CY8C4126LQS-S453T Infineon Technologies Infineon-Automotive_PSoC_4_PSoC_4100S_Plus_Datasheet_Programmable_System-on-Chip_(PSoC)-AdditionalTechnicalInformation-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee7ff0b70e8 Description: IC MCU 32BIT 64KB FLASH 40QFN
Packaging: Tape & Reel (TR)
Package / Case: 40-UFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Speed: 24MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b, 20x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, POR, PWM, WDT
Supplier Device Package: 40-QFN (6x6)
Grade: Automotive
Part Status: Active
Number of I/O: 34
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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CY8C4127LQS-S453T CY8C4127LQS-S453T Infineon Technologies Infineon-Automotive_PSoC_4_PSoC_4100S_Plus_Datasheet_Programmable_System-on-Chip_(PSoC)-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee7ff0b70e8 Description: IC MCU 32BIT 128KB FLASH 40QFN
Packaging: Tape & Reel (TR)
Package / Case: 40-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b SAR, 16x12b Sigma-Delta
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: FIFO, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, DMA, LCD, POR, PWM, Temp Sensor, TRNG, WDT
Supplier Device Package: 40-QFN (6x6)
Part Status: Active
Number of I/O: 34
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2500 Stücke
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CY8C4127LQS-S453 CY8C4127LQS-S453 Infineon Technologies Infineon-Automotive_PSoC_4_PSoC_4100S_Plus_Datasheet_Programmable_System-on-Chip_(PSoC)-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee7ff0b70e8 Description: IC MCU 32BIT 128KB FLASH 40QFN
Number of I/O: 34
Part Status: Active
Supplier Device Package: 40-QFN (6x6)
Peripherals: Brown-out Detect/Reset, CapSense, DMA, LCD, POR, PWM, Temp Sensor, TRNG, WDT
Connectivity: FIFO, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Core Size: 32-Bit
Data Converters: A/D 16x10b SAR, 16x12b Sigma-Delta
Core Processor: ARM® Cortex®-M0+
Program Memory Type: FLASH
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 16K x 8
Program Memory Size: 128KB (128K x 8)
Speed: 24MHz
Mounting Type: Surface Mount
Package / Case: 40-UFQFN Exposed Pad
Packaging: Tray
DigiKey Programmable: Not Verified
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CY8C4146LQS-S453 CY8C4146LQS-S453 Infineon Technologies Infineon-Automotive_PSoC_4_PSoC_4100S_Plus_Datasheet_Programmable_System-on-Chip_(PSoC)-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee7ff0b70e8 Description: IC MCU 32BIT 64KB FLASH 40QFN
Core Size: 32-Bit
Data Converters: A/D 16x10b, 12x12b SAR; D/A 2x7b
Core Processor: ARM® Cortex®-M0+
Program Memory Type: FLASH
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 8K x 8
Program Memory Size: 64KB (64K x 8)
Speed: 48MHz
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 40-UFQFN Exposed Pad
Packaging: Tray
Number of I/O: 34
Part Status: Active
Supplier Device Package: 40-QFN (6x6)
Peripherals: Brown-out Detect/Reset, CapSense, DMA, LCD, POR, PWM, Temp Sensor, WDT
Connectivity: FIFO, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Qualification: AEC-Q100
DigiKey Programmable: Not Verified
Grade: Automotive
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2+15.24 EUR
10+11.79 EUR
25+10.92 EUR
80+10.1 EUR
230+9.56 EUR
490+9.26 EUR
980+9.03 EUR
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CY8C4747LQS-S453T CY8C4747LQS-S453T Infineon Technologies Infineon-Automotive_PSoC_4700_S_Plus-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c82ce56640183676e703c4498 Description: IC MCU 32BIT 128KB FLASH 40QFN
Number of I/O: 34
Part Status: Active
Supplier Device Package: 40-QFN (6x6)
Peripherals: Brown-out Detect/Reset, CapSense, DMA, LCD, POR, PWM, Temp Sensor, WDT
Connectivity: FIFO, I2C, IrDA, LINbus, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Core Size: 32-Bit
Data Converters: A/D 16x10b SAR, 16x12b Sigma-Delta; D/A 2x7/8b
Core Processor: ARM® Cortex®-M0+
Program Memory Type: FLASH
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 8K x 8
Program Memory Size: 128KB (128K x 8)
Speed: 48MHz
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 40-UFQFN Exposed Pad
Packaging: Tape & Reel (TR)
Qualification: AEC-Q100
DigiKey Programmable: Not Verified
Grade: Automotive
Produkt ist nicht verfügbar
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IDW80C65D2XKSA1 IDW80C65D2XKSA1 Infineon Technologies infineon-idw80c65d2-datasheet-en.pdf Description: DIODE ARRAY GP 650V 40A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 36 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 40A
Supplier Device Package: PG-TO247-3
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 40 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
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CY7C4285-10ASC CY7C4285-10ASC Infineon Technologies CY7C4275%2C85.pdf Description: IC FIFO SYNC 64KX18 8NS 64TQFP
Voltage - Supply: 4.5 V ~ 5.5 V
Part Status: Obsolete
FWFT Support: No
Retransmit Capability: Yes
Programmable Flags Support: Yes
Expansion Type: Depth, Width
Bus Directional: Uni-Directional
Supplier Device Package: 64-TQFP (10x10)
Current - Supply (Max): 50mA
Access Time: 8ns
DigiKey Programmable: Not Verified
Operating Temperature: 0°C ~ 70°C
Memory Size: 1.125M (64K x 18)
Function: Synchronous
Mounting Type: Surface Mount
Package / Case: 64-LQFP
Packaging: Bag
Data Rate: 100MHz
Produkt ist nicht verfügbar
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AUIRF7665S2TR AUIRF7665S2TR Infineon Technologies auirf7665s2.pdf?fileId=5546d462533600a4015355ad848013f0 Description: MOSFET N-CH 100V 4.1A DIRECTFET
Input Capacitance (Ciss) (Max) @ Vds: 515 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: DIRECTFET SB
Vgs(th) (Max) @ Id: 5V @ 25µA
Power Dissipation (Max): 2.4W (Ta), 30W (Tc)
Rds On (Max) @ Id, Vgs: 62mOhm @ 8.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta), 14.4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DirectFET™ Isometric SB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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FP50R12W2T7PBPSA1
Hersteller: Infineon Technologies
Description: LOW POWER EASY
Input Capacitance (Cies) @ Vce: 11.1 nF @ 25 V
Current - Collector Cutoff (Max): 5 µA
Power - Max: 20 mW
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 50 A
Part Status: Active
IGBT Type: Trench Field Stop
Supplier Device Package: AG-EASY2B
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 35A
Operating Temperature: -40°C ~ 175°C (TJ)
Configuration: Three Phase Inverter
Input: Three Phase Bridge Rectifier
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
Produkt ist nicht verfügbar
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FP50R12N2T7B16BPSA1
Hersteller: Infineon Technologies
Description: LOW POWER ECONO
Part Status: Active
Packaging: Tray
Produkt ist nicht verfügbar
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FP50R12N2T4PB81BPSA2
Hersteller: Infineon Technologies
Description: LOW POWER ECONO
Part Status: Active
Packaging: Tray
Produkt ist nicht verfügbar
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FP50R12N2T4B16BPSA1
Hersteller: Infineon Technologies
Description: LOW POWER ECONO AG-ECONO2B-711
Part Status: Active
Packaging: Tray
Produkt ist nicht verfügbar
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FP50R12N2T4B86BPSA1
Hersteller: Infineon Technologies
Description: LOW POWER ECONO
Part Status: Active
Packaging: Tray
Produkt ist nicht verfügbar
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PVT422PBF description pvt422.pdf?fileId=5546d462533600a401535684473f2973
PVT422PBF
Hersteller: Infineon Technologies
Description: SSR RELAY SPST-NO 120MA 0-400V
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Through Hole
Voltage - Input: 1.2VDC
Circuit: SPST-NO (1 Form A) x 2
Termination Style: PC Pin
Load Current: 120 mA
Supplier Device Package: 8-DIP
Part Status: Active
Voltage - Load: 0 V ~ 400 V
On-State Resistance (Max): 35 Ohms
Operating Temperature: -40°C ~ 85°C
Approval Agency: UL
Relay Type: Photo-Coupled Relay (Photorelay)
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2+14.39 EUR
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25+12.25 EUR
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500+10.53 EUR
1000+10.17 EUR
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PVT422SPBF description pvt422.pdf?fileId=5546d462533600a401535684473f2973
PVT422SPBF
Hersteller: Infineon Technologies
Description: SSR RELAY SPST-NO 120MA 0-400V
Packaging: Tube
Package / Case: 8-SMD (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.2VDC
Circuit: SPST-NO (1 Form A) x 2
Termination Style: Gull Wing
Load Current: 120 mA
Supplier Device Package: 8-SMD
Part Status: Active
Voltage - Load: 0 V ~ 400 V
On-State Resistance (Max): 35 Ohms
Operating Temperature: -40°C ~ 85°C
Approval Agency: UL
Relay Type: Photo-Coupled Relay (Photorelay)
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2+14.39 EUR
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25+12.25 EUR
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500+10.53 EUR
1000+10.17 EUR
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S25FL128SAGBHI303 Infineon-S25FL128S_S25FL256S_128_Mb_(16_MB)_256_Mb_(32_MB)_3.0V_SPI_Flash_Memory-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecfb6a64a17
S25FL128SAGBHI303
Hersteller: Infineon Technologies
Description: IC FLASH 128MBIT SPI/QUAD 24BGA
Packaging: Tape & Reel (TR)
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (6x8)
Part Status: Active
Memory Interface: SPI - Quad I/O
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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TZ800N16KOFHPSA3 Infineon-TZ800N-DS-v03_05-EN.pdf?fileId=db3a304412b407950112b42f8b8e4c29
TZ800N16KOFHPSA3
Hersteller: Infineon Technologies
Description: SCR MODULE 1.6KV 1500A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 500 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 35000A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 819 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Part Status: Active
Current - On State (It (RMS)) (Max): 1500 A
Voltage - Off State: 1.6 kV
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SPW20N60C3FKSA1 SPW20N60C3_Rev.2.4.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42e3702497f
SPW20N60C3FKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 20.7A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20.7A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 13.1A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 1mA
Supplier Device Package: PG-TO247-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V
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2+11.71 EUR
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120+5.51 EUR
510+4.76 EUR
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SPP20N60S5XKSA1 SPP20N60S5_rev2.8_2009-12-01.pdf
SPP20N60S5XKSA1
Hersteller: Infineon Technologies
Description: HIGH POWER_LEGACY
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 13A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 1mA
Supplier Device Package: PG-TO220-3-1
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 25 V
auf Bestellung 477 Stücke:
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3+9.87 EUR
50+5.12 EUR
100+4.66 EUR
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SPP20N60C3XKSA1 SPx20N60C3.pdf
SPP20N60C3XKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 20.7A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20.7A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 13.1A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 1mA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V
auf Bestellung 1804 Stücke:
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3+8.54 EUR
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500+3.27 EUR
1000+3.05 EUR
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IKP20N60H3XKSA1 IKP20N60H3_rev1.1G.pdf?folderId=db3a30431c69a49d011c6f86019b00a1&fileId=db3a30432b16d655012b199c4f6a2d17
IKP20N60H3XKSA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 600V 40A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 112 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 20A
Supplier Device Package: PG-TO220-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 16ns/194ns
Switching Energy: 690µJ
Test Condition: 400V, 20A, 14.6Ohm, 15V
Gate Charge: 120 nC
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 170 W
Produkt ist nicht verfügbar
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FF600R12IE4BOSA1 Infineon-FF600R12IE4-DS-v02_04-en.pdf?fileId=db3a30431f848401011febaeac813ece
FF600R12IE4BOSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 600A 3350W MOD
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 600A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 600 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 3350 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 37 nF @ 25 V
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+761.36 EUR
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FF600R12IP4BOSA1 Infineon-FF600R12IP4-DS-v02_04-en_de.pdf?fileId=db3a30431f848401011feb94350f3eb9
FF600R12IP4BOSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 600A 3350W
Input Capacitance (Cies) @ Vce: 37 nF @ 25 V
Current - Collector Cutoff (Max): 5 mA
Power - Max: 3350 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 600 A
Part Status: Active
IGBT Type: Trench Field Stop
Supplier Device Package: Module
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 600A
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: Half Bridge
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
auf Bestellung 3 Stücke:
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AnzahlPrivatkunde
1+577.03 EUR
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FF600R12ME4B72BOSA1 Infineon-FF600R12ME4_B72-DS-v03_00-EN.pdf?fileId=5546d4625e763904015e949c2d312e12
FF600R12ME4B72BOSA1
Hersteller: Infineon Technologies
Description: IGBT MODULE 1200V 1200A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 600A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 1200 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 37 nF @ 25 V
auf Bestellung 39 Stücke:
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AnzahlPrivatkunde
1+302.03 EUR
10+275.44 EUR
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FF650R17IE4BOSA1 Infineon-FF650R17IE4-DS-v03_03-en_de.pdf?fileId=db3a30431ff9881501201dcfe2a54986
FF650R17IE4BOSA1
Hersteller: Infineon Technologies
Description: IGBT MODULE 1700V 4150W MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 650A
NTC Thermistor: Yes
Supplier Device Package: Module
Part Status: Active
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 4150 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 54 nF @ 25 V
auf Bestellung 18 Stücke:
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AnzahlPrivatkunde
1+741.8 EUR
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FF600R12KE4BOSA1 Infineon-FF600R12KE4-DS-v02_02-EN.pdf?fileId=5546d46254e133b401550b1aeaef35e0
FF600R12KE4BOSA1
Hersteller: Infineon Technologies
Description: IGBT MODULE 1200V 600A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 600A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 600 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 38 nF @ 25 V
auf Bestellung 47 Stücke:
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1+333.34 EUR
10+290.12 EUR
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FF600R12ME4BOSA1 Infineon-FF600R12ME4-DS-v02_02-en_de.pdf?fileId=db3a30432a40a650012a40f9eac70002
FF600R12ME4BOSA1
Hersteller: Infineon Technologies
Description: IGBT MODULE 1200V 4050W MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 600A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Not For New Designs
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 4050 W
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 37 nF @ 25 V
auf Bestellung 5 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+467.27 EUR
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S25FS512SAGBHV213 Infineon-S25FS512S_512_Mb_1.8_V_Serial_Peripheral_Interface_with_Multi-I_O_Non-Volatile_Flash-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed681a356fe&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en
S25FS512SAGBHV213
Hersteller: Infineon Technologies
Description: IC FLASH 512MBIT SPI/QUAD 24BGA
Memory Organization: 64M x 8
Memory Interface: SPI - Quad I/O, QPI
Part Status: Active
Supplier Device Package: 24-BGA (8x6)
Memory Format: FLASH
Clock Frequency: 133 MHz
Technology: FLASH - NOR
Voltage - Supply: 1.7V ~ 2V
Operating Temperature: -40°C ~ 105°C (TA)
Memory Type: Non-Volatile
Memory Size: 512Mbit
Mounting Type: Surface Mount
Package / Case: 24-TBGA
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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TLE4983CHTNE6747HAMA1 fundamentals-of-power-semiconductors
Hersteller: Infineon Technologies
Description: MAG SWITCH SPEED SENSOR 3SSO
Qualification: AEC-Q100
Grade: Automotive
Part Status: Active
Packaging: Bulk
auf Bestellung 13500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
108+5.47 EUR
Mindestbestellmenge: 108 Stücke
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CY7C107D-10VXI Infineon-CY7C107D_CY7C1007D_1-Mbit_(1M_x_1)_Static_RAM-DataSheet-v12_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebf2ac23343&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY7C107D-10VXI
Hersteller: Infineon Technologies
Description: IC SRAM 1MBIT PARALLEL 28SOJ
DigiKey Programmable: Not Verified
Memory Organization: 1M x 1
Access Time: 10 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 10ns
Part Status: Active
Supplier Device Package: 28-SOJ
Memory Format: SRAM
Technology: SRAM - Asynchronous
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Volatile
Memory Size: 1Mbit
Mounting Type: Surface Mount
Package / Case: 28-BSOJ (0.400", 10.16mm Width)
Packaging: Tube
Produkt ist nicht verfügbar
Mindestbestellmenge: 260 Stücke
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FF2400RB12IP7PBPSA1
FF2400RB12IP7PBPSA1
Hersteller: Infineon Technologies
Description: PP IHM I XHP 1 7KV AG-PRIME3+-71
Voltage - Collector Emitter Breakdown (Max): 750 V
Current - Collector (Ic) (Max): 2400 A
Part Status: Active
NTC Thermistor: No
Configuration: 2 Independent
Input: Standard
Packaging: Tray
auf Bestellung 3 Stücke:
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AnzahlPrivatkunde
1+2817.16 EUR
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IRLSL4030PBF irls4030pbf.pdf?fileId=5546d462533600a401535671e1fd2715
IRLSL4030PBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 180A TO262
Input Capacitance (Ciss) (Max) @ Vds: 11360 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 4.5 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-262
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 370W (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 110A, 10V
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Packaging: Tube
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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1EDS20I12SVXUMA1 Infineon-1EDS20I12SV-DS-v00_73-en.pdf?fileId=5546d46145f1f3a40145faf0aa200fc1
1EDS20I12SVXUMA1
Hersteller: Infineon Technologies
Description: DIGITAL ISO 5KV 1CH GATE DVR
Number of Channels: 1
Part Status: Active
Voltage - Isolation: 5000Vrms
Technology: Magnetic Coupling
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1000+9.02 EUR
2000+8.83 EUR
Mindestbestellmenge: 1000 Stücke
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IKW40T120FKSA1 fundamentals-of-power-semiconductors
IKW40T120FKSA1
Hersteller: Infineon Technologies
Description: IGBT NPT FS 1200V 75A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 240 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 40A
Supplier Device Package: PG-TO247-3-1
IGBT Type: NPT, Trench Field Stop
Td (on/off) @ 25°C: 48ns/480ns
Switching Energy: 6.5mJ
Test Condition: 600V, 40A, 15Ohm, 15V
Gate Charge: 203 nC
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 105 A
Power - Max: 270 W
Produkt ist nicht verfügbar
Mindestbestellmenge: 240 Stücke
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FZ400R12KS4HOSA1 Infineon-FZ400R12KS4-DS-v03_04-en_de.pdf?fileId=db3a304412b407950112b4336f045caa
FZ400R12KS4HOSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 510A 2500W MOD
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 510 A
Part Status: Active
Supplier Device Package: Module
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 400A
Operating Temperature: -40°C ~ 125°C
Configuration: Single
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
Input Capacitance (Cies) @ Vce: 26 nF @ 25 V
Current - Collector Cutoff (Max): 5 mA
Power - Max: 2500 W
Produkt ist nicht verfügbar
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SPW35N60CFDFKSA1 SPW35N60CFD_Rev.1.2.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42c05a24651
SPW35N60CFDFKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 34.1A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34.1A (Tc)
Rds On (Max) @ Id, Vgs: 118mOhm @ 21.6A, 10V
Power Dissipation (Max): 313W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1.9mA
Supplier Device Package: PG-TO247-3-1
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 212 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5060 pF @ 25 V
auf Bestellung 1139 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+21.17 EUR
30+12.6 EUR
120+10.72 EUR
510+9.34 EUR
1020+9.32 EUR
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P2000DE45X168HPSA1
Hersteller: Infineon Technologies
Description: PRESS PACK IGBT
Packaging: Tray
Part Status: Active
Produkt ist nicht verfügbar
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FZ400R12KE3HOSA1 Infineon-FZ400R12KE3-DS-v03_02-en_de.pdf?fileId=db3a304412b407950112b433be115d71
FZ400R12KE3HOSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 650A 2250W MOD
Input Capacitance (Cies) @ Vce: 28 nF @ 25 V
Current - Collector Cutoff (Max): 5 mA
Power - Max: 2250 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 650 A
Part Status: Active
Supplier Device Package: Module
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 400A
Operating Temperature: -40°C ~ 125°C
Configuration: Single
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
auf Bestellung 4 Stücke:
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AnzahlPrivatkunde
1+221.7 EUR
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FZ400R12KP4HOSA1 Infineon-FZ400R12KP4-DS-v02_02-en_de.pdf?fileId=db3a304320896aa20120c8ca11e73293
FZ400R12KP4HOSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 400A 2400W
Input Capacitance (Cies) @ Vce: 28 nF @ 25 V
Current - Collector Cutoff (Max): 5 mA
Power - Max: 2400 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 400 A
Part Status: Active
IGBT Type: Trench Field Stop
Supplier Device Package: Module
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 400A
Operating Temperature: -40°C ~ 125°C
Configuration: Single
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
auf Bestellung 5 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+218.89 EUR
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FZ400R12KE3B1HOSA1 Infineon-FZ400R12KE3_B1-DS-v03_02-en_de.pdf?fileId=db3a304412b407950112b433c1965d75
FZ400R12KE3B1HOSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 650A 2250W MOD
Input Capacitance (Cies) @ Vce: 28 nF @ 25 V
Current - Collector Cutoff (Max): 5 mA
Power - Max: 2250 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 650 A
Part Status: Active
Supplier Device Package: Module
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 400A
Operating Temperature: -40°C ~ 125°C
Configuration: Single
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+210.38 EUR
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FZ600R12KE4HOSA1 Infineon-FZ600R12KE4-DS-v02_01-en_de.pdf?fileId=db3a30431f848401011fb7bb4ece5939
FZ600R12KE4HOSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 600A 3000W MOD
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 600A
NTC Thermistor: No
Supplier Device Package: Module
Part Status: Active
Current - Collector (Ic) (Max): 600 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 3000 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 1.7 nF @ 25 V
auf Bestellung 229 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+251.44 EUR
10+208.2 EUR
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FZ600R17KE3HOSA1 Infineon-FZ600R17KE3-DS-v03_00-en_de.pdf?fileId=db3a304412b407950112b43044fb4fda
FZ600R17KE3HOSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1700V 840A 3150W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 600A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 840 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 3150 W
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 54 nF @ 25 V
auf Bestellung 12 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+366.82 EUR
10+338.64 EUR
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FZ600R17KE4HOSA1 Infineon-FZ600R17KE4-DS-v02_02-en_de.pdf?fileId=db3a3043293a15c401294a1c37557de9
FZ600R17KE4HOSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1700V 1200A 3350W MOD
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 600A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 1200 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 3350 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 49 nF @ 25 V
auf Bestellung 138 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+301.99 EUR
10+258.38 EUR
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FZ600R12KS4HOSA1 Infineon-FZ600R12KS4-DS-v03_01-en_de.pdf?fileId=db3a304412b407950112b43370005cae
FZ600R12KS4HOSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 700A 3900W MOD
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 3.75V @ 15V, 600A
NTC Thermistor: No
Supplier Device Package: Module
Part Status: Active
Current - Collector (Ic) (Max): 700 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 3900 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 39 nF @ 25 V
auf Bestellung 44 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+317.03 EUR
10+273.56 EUR
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FZ600R65KE3NOSA1 Infineon-FZ600R65KE3-DS-v03_00-EN.pdf?fileId=db3a30432c64a60d012cbbecaa6f0356
FZ600R65KE3NOSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 6500V 600A 2400W
Current - Collector (Ic) (Max): 600 A
Part Status: Active
Supplier Device Package: Module
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 600A
Operating Temperature: -50°C ~ 125°C
Configuration: Single
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
Input Capacitance (Cies) @ Vce: 160 nF @ 25 V
Current - Collector Cutoff (Max): 5 mA
Power - Max: 2400 W
Voltage - Collector Emitter Breakdown (Max): 6500 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FZ600R17KE3S4HOSA1 Infineon-FZ600R17KE3_S4-DS-v03_00-en_de.pdf?fileId=db3a3043416e106e014173bd63163a3b
FZ600R17KE3S4HOSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1700V 1200A 3150W
Input Capacitance (Cies) @ Vce: 54 nF @ 25 V
Current - Collector Cutoff (Max): 3 mA
Power - Max: 3150 W
Voltage - Collector Emitter Breakdown (Max): 1700 V
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 1200 A
Part Status: Active
Supplier Device Package: Module
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 600A
Operating Temperature: -40°C ~ 125°C
Configuration: Single
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
Produkt ist nicht verfügbar
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IRLB8314PBF irlb8314pbf.pdf?fileId=5546d462533600a4015356604d6f258f
IRLB8314PBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 171A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 5050 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 2.2V @ 100µA
Power Dissipation (Max): 125W (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 68A, 10V
Current - Continuous Drain (Id) @ 25°C: 171A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
auf Bestellung 897 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
8+2.73 EUR
50+1.29 EUR
100+1.14 EUR
500+0.9 EUR
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CY95F778ENPMC1-G-103UNE2 00204700MB95710LSeriesMB95770LSeriesNew8FX8bitMicrocontrollers.pdf
CY95F778ENPMC1-G-103UNE2
Hersteller: Infineon Technologies
Description: IC MCU 8BIT 60KB 64LQFP
Number of I/O: 55
Part Status: Active
Supplier Device Package: 64-LQFP (10x10)
Peripherals: LCD, LVD, POR, PWM, WDT
Connectivity: I2C, SIO, UART/USART
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Core Size: 8-Bit
Data Converters: A/D 8x8/10b
Core Processor: F²MC-8FX
Program Memory Type: FLASH
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 2K x 8
Program Memory Size: 60KB (60K x 8)
Speed: 16.25MHz
Mounting Type: Surface Mount
Package / Case: 64-LQFP
Packaging: Tray
Produkt ist nicht verfügbar
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XMC1100T016F0008ABXUMA1 Infineon-xmc1100_AB-DS-v01_06-EN.pdf?fileId=5546d4624a0bf290014a4bdaff9325bd&ack=t
XMC1100T016F0008ABXUMA1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 8KB FLASH 16TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 6x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-TSSOP-16-8
Part Status: Active
Number of I/O: 11
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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XMC1100T016F0008ABXUMA1 Infineon-xmc1100_AB-DS-v01_06-EN.pdf?fileId=5546d4624a0bf290014a4bdaff9325bd&ack=t
XMC1100T016F0008ABXUMA1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 8KB FLASH 16TSSOP
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 6x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-TSSOP-16-8
Part Status: Active
Number of I/O: 11
DigiKey Programmable: Not Verified
auf Bestellung 295 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
6+3.86 EUR
10+2.84 EUR
25+2.59 EUR
100+2.31 EUR
250+2.18 EUR
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XMC1100T016X0032ABXUMA1 Infineon-xmc1100_AB-DS-v01_06-EN.pdf?fileId=5546d4624a0bf290014a4bdaff9325bd&ack=t
XMC1100T016X0032ABXUMA1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 32KB FLASH 16TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 6x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-TSSOP-16-8
Part Status: Active
Number of I/O: 11
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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CY8C6347BZI-BLD44 infineon-psoc-6-mcu-cy8c63x6-cy8c63x7-datasheet-psoc-63-mcu-with-bluetooth-le-datasheet-en.pdf
CY8C6347BZI-BLD44
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 1MB FLASH 124VFBGA
Packaging: Tray
Package / Case: 124-VFBGA
Mounting Type: Surface Mount
Speed: 100MHz, 150MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 288K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
Data Converters: A/D 16x10b SAR, 16x12b Sigma-Delta; D/A 2x7b, 1x8/12b
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
Connectivity: FIFO, I2C, IrDA, Microwire, SmartCard, SPI, SSP, UART/USART, USB
Peripherals: Brown-out Detect/Reset, CapSense, Crypto - AES, DMA, I2S, LCD, LVD, POR, PWM, RSA, SHA, Temp Sensor, TRNG, WDT
Supplier Device Package: 124-VFBGA (9x9)
Part Status: Active
Number of I/O: 84
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY8C6347BZI-BLD43T infineon-psoc-6-mcu-cy8c63x6-cy8c63x7-datasheet-psoc-63-mcu-with-bluetooth-le-datasheet-en.pdf
CY8C6347BZI-BLD43T
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 1MB FLASH 116BGA
Packaging: Tape & Reel (TR)
Package / Case: 116-WFBGA
Mounting Type: Surface Mount
Speed: 100MHz, 150MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 288K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
Data Converters: A/D 16x10b SAR, 16x12b Sigma-Delta; D/A 2x7b, 1x8/12b
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
Connectivity: FIFO, I2C, IrDA, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, Crypto - AES, DMA, I2S, LCD, LVD, POR, PWM, RSA, SHA, Temp Sensor, TRNG, WDT
Supplier Device Package: 116-BGA (5.2x6.4)
Part Status: Active
Number of I/O: 78
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Mindestbestellmenge: 3500 Stücke
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SPP11N60CFDXKSA1 SPP11N60CFD_Rev.2.4.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42bfcec4645
SPP11N60CFDXKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 11A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 440mOhm @ 7A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 5V @ 500µA
Supplier Device Package: PG-TO220-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 500 Stücke
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SPP11N60S5XKSA1 SPP_I11N60S5_Rev.2.4.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42d978048a7
SPP11N60S5XKSA1
Hersteller: Infineon Technologies
Description: LOW POWER_LEGACY
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 7A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 500µA
Supplier Device Package: PG-TO220-3-1
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1460 pF @ 25 V
Produkt ist nicht verfügbar
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CY8C4747LQS-S453 Infineon-Automotive_PSoC_4700_S_Plus-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c82ce56640183676e703c4498
CY8C4747LQS-S453
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 128KB FLASH 40QFN
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 8K x 8
Program Memory Size: 128KB (128K x 8)
Speed: 48MHz
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 40-UFQFN Exposed Pad
Packaging: Tray
Number of I/O: 34
Part Status: Active
Supplier Device Package: 40-QFN (6x6)
Peripherals: Brown-out Detect/Reset, CapSense, DMA, POR, PWM, WDT
Connectivity: I2C, IrDA, LINbus, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Core Size: 32-Bit
Data Converters: A/D 16x10b, 16x12b SAR; D/A 2x7b
Core Processor: ARM® Cortex®-M0+
Program Memory Type: FLASH
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Grade: Automotive
auf Bestellung 2450 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+15.73 EUR
10+12.25 EUR
25+11.38 EUR
100+10.42 EUR
490+10.15 EUR
Mindestbestellmenge: 2 Stücke
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CY8C4147LQS-S453T Infineon-Automotive_PSoC_4_PSoC_4100S_Plus_Datasheet_Programmable_System-on-Chip_(PSoC)-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee7ff0b70e8
CY8C4147LQS-S453T
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 128KB FLASH 40QFN
Number of I/O: 34
Part Status: Active
Supplier Device Package: 40-QFN (6x6)
Peripherals: Brown-out Detect/Reset, CapSense, DMA, LCD, POR, PWM, Temp Sensor, WDT
Connectivity: FIFO, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Packaging: Tape & Reel (TR)
Qualification: AEC-Q100
DigiKey Programmable: Not Verified
Grade: Automotive
Core Size: 32-Bit
Data Converters: A/D 16x10b, 20x12b SAR
Core Processor: ARM® Cortex®-M0+
Program Memory Type: FLASH
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 16K x 8
Program Memory Size: 128KB (128K x 8)
Speed: 24MHz
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 40-UFQFN Exposed Pad
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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CY8C4146LQS-S453T Infineon-Automotive_PSoC_4_PSoC_4100S_Plus_Datasheet_Programmable_System-on-Chip_(PSoC)-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee7ff0b70e8
CY8C4146LQS-S453T
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 64KB FLASH 40QFN
RAM Size: 8K x 8
Program Memory Size: 64KB (64K x 8)
Speed: 48MHz
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 40-UFQFN Exposed Pad
Packaging: Tape & Reel (TR)
Qualification: AEC-Q100
DigiKey Programmable: Not Verified
Grade: Automotive
Number of I/O: 34
Part Status: Active
Supplier Device Package: 40-QFN (6x6)
Peripherals: Brown-out Detect/Reset, CapSense, DMA, LCD, POR, PWM, Temp Sensor, WDT
Connectivity: FIFO, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Core Size: 32-Bit
Data Converters: A/D 16x10b, 16x12b SAR; D/A 2x7b
Core Processor: ARM® Cortex®-M0+
Program Memory Type: FLASH
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 105°C (TA)
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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CY8C4147LQS-S453 Infineon-Automotive_PSoC_4_PSoC_4100S_Plus_Datasheet_Programmable_System-on-Chip_(PSoC)-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee7ff0b70e8
CY8C4147LQS-S453
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 128KB FLASH 40QFN
Qualification: AEC-Q100
DigiKey Programmable: Not Verified
Grade: Automotive
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 16K x 8
Program Memory Size: 128KB (128K x 8)
Speed: 24MHz
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 40-UFQFN Exposed Pad
Packaging: Tray
Number of I/O: 34
Part Status: Active
Supplier Device Package: 40-QFN (6x6)
Peripherals: Brown-out Detect/Reset, CapSense, DMA, LCD, POR, PWM, Temp Sensor, WDT
Connectivity: FIFO, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Core Size: 32-Bit
Data Converters: A/D 16x10b, 20x12b SAR
Core Processor: ARM® Cortex®-M0+
Program Memory Type: FLASH
Oscillator Type: External, Internal
Produkt ist nicht verfügbar
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CY8C4126LQS-S453 Infineon-Automotive_PSoC_4_PSoC_4100S_Plus_Datasheet_Programmable_System-on-Chip_(PSoC)-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee7ff0b70e8
CY8C4126LQS-S453
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 64KB FLASH 40QFN
Packaging: Tray
Package / Case: 40-UFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Speed: 24MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b, 20x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: FIFO, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, DMA, LCD, POR, PWM, Temp Sensor, WDT
Supplier Device Package: 40-QFN (6x6)
Grade: Automotive
Part Status: Active
Number of I/O: 34
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Produkt ist nicht verfügbar
Mindestbestellmenge: 4900 Stücke
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CY8C4126LQS-S453T Infineon-Automotive_PSoC_4_PSoC_4100S_Plus_Datasheet_Programmable_System-on-Chip_(PSoC)-AdditionalTechnicalInformation-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee7ff0b70e8
CY8C4126LQS-S453T
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 64KB FLASH 40QFN
Packaging: Tape & Reel (TR)
Package / Case: 40-UFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Speed: 24MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b, 20x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, POR, PWM, WDT
Supplier Device Package: 40-QFN (6x6)
Grade: Automotive
Part Status: Active
Number of I/O: 34
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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CY8C4127LQS-S453T Infineon-Automotive_PSoC_4_PSoC_4100S_Plus_Datasheet_Programmable_System-on-Chip_(PSoC)-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee7ff0b70e8
CY8C4127LQS-S453T
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 128KB FLASH 40QFN
Packaging: Tape & Reel (TR)
Package / Case: 40-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b SAR, 16x12b Sigma-Delta
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: FIFO, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, DMA, LCD, POR, PWM, Temp Sensor, TRNG, WDT
Supplier Device Package: 40-QFN (6x6)
Part Status: Active
Number of I/O: 34
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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CY8C4127LQS-S453 Infineon-Automotive_PSoC_4_PSoC_4100S_Plus_Datasheet_Programmable_System-on-Chip_(PSoC)-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee7ff0b70e8
CY8C4127LQS-S453
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 128KB FLASH 40QFN
Number of I/O: 34
Part Status: Active
Supplier Device Package: 40-QFN (6x6)
Peripherals: Brown-out Detect/Reset, CapSense, DMA, LCD, POR, PWM, Temp Sensor, TRNG, WDT
Connectivity: FIFO, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Core Size: 32-Bit
Data Converters: A/D 16x10b SAR, 16x12b Sigma-Delta
Core Processor: ARM® Cortex®-M0+
Program Memory Type: FLASH
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 16K x 8
Program Memory Size: 128KB (128K x 8)
Speed: 24MHz
Mounting Type: Surface Mount
Package / Case: 40-UFQFN Exposed Pad
Packaging: Tray
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Mindestbestellmenge: 4900 Stücke
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CY8C4146LQS-S453 Infineon-Automotive_PSoC_4_PSoC_4100S_Plus_Datasheet_Programmable_System-on-Chip_(PSoC)-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee7ff0b70e8
CY8C4146LQS-S453
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 64KB FLASH 40QFN
Core Size: 32-Bit
Data Converters: A/D 16x10b, 12x12b SAR; D/A 2x7b
Core Processor: ARM® Cortex®-M0+
Program Memory Type: FLASH
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 8K x 8
Program Memory Size: 64KB (64K x 8)
Speed: 48MHz
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 40-UFQFN Exposed Pad
Packaging: Tray
Number of I/O: 34
Part Status: Active
Supplier Device Package: 40-QFN (6x6)
Peripherals: Brown-out Detect/Reset, CapSense, DMA, LCD, POR, PWM, Temp Sensor, WDT
Connectivity: FIFO, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Qualification: AEC-Q100
DigiKey Programmable: Not Verified
Grade: Automotive
auf Bestellung 4885 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+15.24 EUR
10+11.79 EUR
25+10.92 EUR
80+10.1 EUR
230+9.56 EUR
490+9.26 EUR
980+9.03 EUR
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CY8C4747LQS-S453T Infineon-Automotive_PSoC_4700_S_Plus-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c82ce56640183676e703c4498
CY8C4747LQS-S453T
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 128KB FLASH 40QFN
Number of I/O: 34
Part Status: Active
Supplier Device Package: 40-QFN (6x6)
Peripherals: Brown-out Detect/Reset, CapSense, DMA, LCD, POR, PWM, Temp Sensor, WDT
Connectivity: FIFO, I2C, IrDA, LINbus, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Core Size: 32-Bit
Data Converters: A/D 16x10b SAR, 16x12b Sigma-Delta; D/A 2x7/8b
Core Processor: ARM® Cortex®-M0+
Program Memory Type: FLASH
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 8K x 8
Program Memory Size: 128KB (128K x 8)
Speed: 48MHz
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 40-UFQFN Exposed Pad
Packaging: Tape & Reel (TR)
Qualification: AEC-Q100
DigiKey Programmable: Not Verified
Grade: Automotive
Produkt ist nicht verfügbar
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IDW80C65D2XKSA1 infineon-idw80c65d2-datasheet-en.pdf
IDW80C65D2XKSA1
Hersteller: Infineon Technologies
Description: DIODE ARRAY GP 650V 40A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 36 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 40A
Supplier Device Package: PG-TO247-3
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 40 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
auf Bestellung 155 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+6.28 EUR
30+3.4 EUR
120+2.76 EUR
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CY7C4285-10ASC CY7C4275%2C85.pdf
CY7C4285-10ASC
Hersteller: Infineon Technologies
Description: IC FIFO SYNC 64KX18 8NS 64TQFP
Voltage - Supply: 4.5 V ~ 5.5 V
Part Status: Obsolete
FWFT Support: No
Retransmit Capability: Yes
Programmable Flags Support: Yes
Expansion Type: Depth, Width
Bus Directional: Uni-Directional
Supplier Device Package: 64-TQFP (10x10)
Current - Supply (Max): 50mA
Access Time: 8ns
DigiKey Programmable: Not Verified
Operating Temperature: 0°C ~ 70°C
Memory Size: 1.125M (64K x 18)
Function: Synchronous
Mounting Type: Surface Mount
Package / Case: 64-LQFP
Packaging: Bag
Data Rate: 100MHz
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AUIRF7665S2TR auirf7665s2.pdf?fileId=5546d462533600a4015355ad848013f0
AUIRF7665S2TR
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 4.1A DIRECTFET
Input Capacitance (Ciss) (Max) @ Vds: 515 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: DIRECTFET SB
Vgs(th) (Max) @ Id: 5V @ 25µA
Power Dissipation (Max): 2.4W (Ta), 30W (Tc)
Rds On (Max) @ Id, Vgs: 62mOhm @ 8.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta), 14.4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DirectFET™ Isometric SB
Packaging: Tape & Reel (TR)
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