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IRF7665S2TRPBF IRF7665S2TRPBF Infineon Technologies IRF7665S2TR%281%29PbF.pdf Description: MOSFET N-CH 100V 4.1A DIRECTFET
Input Capacitance (Ciss) (Max) @ Vds: 515 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: DIRECTFET SB
Vgs(th) (Max) @ Id: 5V @ 25µA
Power Dissipation (Max): 2.4W (Ta), 30W (Tc)
Rds On (Max) @ Id, Vgs: 62mOhm @ 8.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta), 14.4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DirectFET™ Isometric SB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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IKW50N65H5FKSA1 IKW50N65H5FKSA1 Infineon Technologies DS_IKW50N65H5+1.1.pdf?folderId=db3a3043156fd5730115f56849b61941&fileId=db3a30433afc7e3e013b1e3073ec5951 Description: IGBT 650V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 57 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
Supplier Device Package: PG-TO247-3
Td (on/off) @ 25°C: 21ns/180ns
Switching Energy: 520µJ (on), 180µJ (off)
Test Condition: 400V, 25A, 12Ohm, 15V
Gate Charge: 120 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 305 W
auf Bestellung 7434 Stücke:
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30+5.22 EUR
120+4.32 EUR
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IKW50N65F5FKSA1 IKW50N65F5FKSA1 Infineon Technologies DS_IKW50N65F5+1.1.pdf?folderId=db3a3043156fd5730115f56849b61941&fileId=db3a30433afc7e3e013afe09fcdb00e5 Description: IGBT 650V 80A TO247-3
Reverse Recovery Time (trr): 52 ns
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Power - Max: 305 W
Current - Collector Pulsed (Icm): 150 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 80 A
Part Status: Active
Gate Charge: 120 nC
Test Condition: 400V, 25A, 12Ohm, 15V
Switching Energy: 490µJ (on), 160µJ (off)
Td (on/off) @ 25°C: 21ns/175ns
Supplier Device Package: PG-TO247-3
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
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IKW50N65EH5XKSA1 IKW50N65EH5XKSA1 Infineon Technologies Infineon-IKW50N65EH5-DS-v02_01-EN.pdf?fileId=5546d4624d6fc3d5014df77c98ca4461 Description: IGBT TRENCH 650V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 81 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench
Td (on/off) @ 25°C: 25ns/172ns
Switching Energy: 1.5mJ (on), 500µJ (off)
Test Condition: 400V, 50A, 12Ohm, 15V
Gate Charge: 120 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 275 W
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IKW50N65ES5XKSA1 IKW50N65ES5XKSA1 Infineon Technologies Infineon-IKW50N65ES5-DS-v02_03-EN.pdf?fileId=5546d4624fb7fef20150147874f758c0 Description: IGBT TRENCH 650V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 70 ns
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 50A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench
Td (on/off) @ 25°C: 20ns/127ns
Switching Energy: 1.23mJ (on), 550µJ (off)
Test Condition: 400V, 50A, 8.2Ohm, 15V
Gate Charge: 120 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 274 W
auf Bestellung 239 Stücke:
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IKZ50N65EH5XKSA1 IKZ50N65EH5XKSA1 Infineon Technologies Infineon-IKZ50N65EH5-DS-v02_01-EN.pdf?fileId=5546d4624933b87501497a12010f201a Description: IGBT TRENCH 650V 85A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 53 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
Supplier Device Package: PG-TO247-4
IGBT Type: Trench
Td (on/off) @ 25°C: 20ns/250ns
Switching Energy: 410µJ (on), 190µJ (off)
Test Condition: 400V, 25A, 12Ohm, 15V
Gate Charge: 109 nC
Part Status: Active
Current - Collector (Ic) (Max): 85 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 273 W
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2+11.82 EUR
30+6.71 EUR
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BSP62H6327XTSA1 BSP62H6327XTSA1 Infineon Technologies bsp60_bsp61_bsp62.pdf?folderId=db3a30431441fb5d011445c30f210183&fileId=db3a30431441fb5d011445e1c2e7018a Description: TRANS PNP DARL 80V 1A SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.8V @ 1mA, 1A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: PG-SOT223-4
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.5 W
Produkt ist nicht verfügbar
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AUIRFS3107-7P AUIRFS3107-7P Infineon Technologies AUIRFS3107-7P.pdf Description: MOSFET N-CH 75V 240A D2PAK
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 9200 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Drain to Source Voltage (Vdss): 75 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Last Time Buy
Supplier Device Package: D2PAK (7-Lead)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 370W (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 160A, 10V
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Packaging: Tube
Produkt ist nicht verfügbar
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SPW47N60C3FKSA1 SPW47N60C3FKSA1 Infineon Technologies SPW47N60C3_Rev.2.4.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42dff93492f Description: MOSFET N-CH 650V 47A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 30A, 10V
Power Dissipation (Max): 415W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 2.7mA
Supplier Device Package: PG-TO247-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 320 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 25 V
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FF900R12IP4BOSA2 FF900R12IP4BOSA2 Infineon Technologies Infineon-FF900R12IP4-DS-v02_04-en_de.pdf?fileId=db3a30431f848401011febb861df3edd Description: IGBT MOD 1200V 900A 5100W MOD
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 900A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 900 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 5100 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 54 nF @ 25 V
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BDP948H6327XTSA1 BDP948H6327XTSA1 Infineon Technologies bdp948_bdp950_bdp954.pdf?folderId=db3a304314dca38901155ffc06d51dc7&fileId=db3a304314dca38901156149b3e81f67 Description: TRANS PNP 45V 3A PG-SOT223-4-10
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 500mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: PG-SOT223-4-10
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 5 W
Produkt ist nicht verfügbar
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S29JL064J55BHI000 S29JL064J55BHI000 Infineon Technologies Infineon-S29JL064J_64_Mb_(8M_x_8_Bit_4M_x_16_Bit)_3_V_Simultaneous_Read_Write_Flash-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6688c56c7&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integ Description: IC FLASH 64MBIT PARALLEL 48FBGA
Memory Organization: 8M x 8, 4M x 16
Access Time: 55 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 55ns
Part Status: Active
Supplier Device Package: 48-FBGA (8.15x6.15)
Memory Format: FLASH
Technology: FLASH - NOR
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 64Mbit
Mounting Type: Surface Mount
Package / Case: 48-VFBGA
Packaging: Tray
DigiKey Programmable: Not Verified
auf Bestellung 3042 Stücke:
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2+16.71 EUR
10+15.37 EUR
25+15.05 EUR
40+15.01 EUR
80+13.46 EUR
338+13.05 EUR
676+12.41 EUR
1014+11.98 EUR
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S29JL064J55TFI000 S29JL064J55TFI000 Infineon Technologies Infineon-S29JL064J_64_Mb_(8M_x_8_Bit_4M_x_16_Bit)_3_V_Simultaneous_Read_Write_Flash-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6688c56c7&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integ Description: IC FLASH 64MBIT PARALLEL 48TSOP
Memory Organization: 8M x 8, 4M x 16
Access Time: 55 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 55ns
Part Status: Active
Supplier Device Package: 48-TSOP
Memory Format: FLASH
Technology: FLASH - NOR
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 64Mbit
Mounting Type: Surface Mount
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Packaging: Tray
DigiKey Programmable: Verified
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2+14.55 EUR
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25+13.14 EUR
96+12.53 EUR
192+12.22 EUR
288+12.04 EUR
576+11.75 EUR
1056+11.48 EUR
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S25FL064LABNFV010 S25FL064LABNFV010 Infineon Technologies Infineon-S25FL064L_64-Mbit_(8-Mbyte)_3.0_V_FL-L_SPI_Flash_Memory-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee2d2846996&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC FLASH 64MBIT SPI/QUAD 8WSON
Memory Organization: 8M x 8
Memory Interface: SPI - Quad I/O, QPI
Part Status: Active
Supplier Device Package: 8-WSON (5x6)
Memory Format: FLASH
Clock Frequency: 108 MHz
Technology: FLASH - NOR
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 105°C (TA)
Memory Type: Non-Volatile
Memory Size: 64Mbit
Mounting Type: Surface Mount
Package / Case: 8-WFDFN Exposed Pad
Packaging: Tray
DigiKey Programmable: Not Verified
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40+3.14 EUR
80+2.81 EUR
230+2.8 EUR
490+2.75 EUR
980+2.64 EUR
4900+2.45 EUR
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IRFP4768PBF IRFP4768PBF Infineon Technologies irfp4768pbf.pdf?fileId=5546d462533600a40153562c959b2021 Description: MOSFET N-CH 250V 93A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 93A (Tc)
Rds On (Max) @ Id, Vgs: 17.5mOhm @ 56A, 10V
Power Dissipation (Max): 520W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10880 pF @ 50 V
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IPA60R1K0CEXKSA1 IPA60R1K0CEXKSA1 Infineon Technologies Infineon-IPA60R1K0CE-DS-v02_00-EN.pdf?fileId=5546d462533600a401537a8be0c671ef Description: MOSFET N-CH 600V 6.8A TO220
Rds On (Max) @ Id, Vgs: 1Ohm @ 1.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO220-FP
Vgs(th) (Max) @ Id: 3.5V @ 130µA
Power Dissipation (Max): 26W (Tc)
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100+1.11 EUR
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STK14C88-5K45M STK14C88-5K45M Infineon Technologies download Description: IC NVSRAM 256KBIT PAR 32CDIP
DigiKey Programmable: Not Verified
Memory Organization: 32K x 8
Access Time: 45 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 45ns
Part Status: Obsolete
Supplier Device Package: 32-CDIP
Memory Format: NVSRAM
Technology: NVSRAM (Non-Volatile SRAM)
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -55°C ~ 125°C (TA)
Memory Type: Non-Volatile
Memory Size: 256Kbit
Mounting Type: Through Hole
Package / Case: 32-CDIP (0.300", 7.62mm)
Packaging: Tube
Produkt ist nicht verfügbar
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STK14C88-5C45M STK14C88-5C45M Infineon Technologies DS_428_STK14C88.pdf Description: IC NVSRAM 256KBIT PAR 32CDIP
DigiKey Programmable: Not Verified
Memory Organization: 32K x 8
Access Time: 45 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 45ns
Part Status: Obsolete
Memory Size: 256Kbit
Supplier Device Package: 32-CDIP
Memory Format: NVSRAM
Technology: NVSRAM (Non-Volatile SRAM)
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -55°C ~ 125°C (TA)
Memory Type: Non-Volatile
Mounting Type: Through Hole
Package / Case: 32-CDIP (0.300", 7.62mm)
Packaging: Tube
Produkt ist nicht verfügbar
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STK14C88-3NF35TR STK14C88-3NF35TR Infineon Technologies STK14C88-3.pdf Description: IC NVSRAM 256KBIT PAR 32SOIC
DigiKey Programmable: Not Verified
Write Cycle Time - Word, Page: 35ns
Part Status: Obsolete
Supplier Device Package: 32-SOIC
Memory Format: NVSRAM
Technology: NVSRAM (Non-Volatile SRAM)
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: 0°C ~ 70°C (TA)
Memory Type: Non-Volatile
Memory Size: 256Kbit
Mounting Type: Surface Mount
Package / Case: 32-SOIC (0.295", 7.50mm Width)
Packaging: Tape & Reel (TR)
Memory Organization: 32K x 8
Access Time: 35 ns
Memory Interface: Parallel
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STK14C88-NF35U STK14C88-NF35U Infineon Technologies STK14C88-NF35U.pdf Description: IC NVSRAM 256KBIT PAR 32SOIC
DigiKey Programmable: Not Verified
Memory Organization: 32K x 8
Access Time: 35 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 35ns
Part Status: Obsolete
Supplier Device Package: 32-SOIC
Memory Format: NVSRAM
Technology: NVSRAM (Non-Volatile SRAM)
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -55°C ~ 125°C (TA)
Memory Type: Non-Volatile
Memory Size: 256Kbit
Mounting Type: Surface Mount
Package / Case: 32-SOIC (0.295", 7.50mm Width)
Packaging: Tube
Produkt ist nicht verfügbar
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STK14D88-NF45TR STK14D88-NF45TR Infineon Technologies STK14D88.pdf Description: IC NVSRAM 256KBIT PAR 32SOIC
Memory Organization: 32K x 8
Access Time: 45 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 45ns
Part Status: Obsolete
Supplier Device Package: 32-SOIC
Memory Format: NVSRAM
Technology: NVSRAM (Non-Volatile SRAM)
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: 0°C ~ 70°C (TA)
Memory Type: Non-Volatile
Memory Size: 256Kbit
Mounting Type: Surface Mount
Package / Case: 32-SOIC (0.295", 7.50mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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STK14CA8-RF35 STK14CA8-RF35 Infineon Technologies STK14CA8.pdf Description: IC NVSRAM 1MBIT PARALLEL 48SSOP
Memory Organization: 128K x 8
Access Time: 35 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 35ns
Part Status: Obsolete
Supplier Device Package: 48-SSOP
Memory Format: NVSRAM
Technology: NVSRAM (Non-Volatile SRAM)
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: 0°C ~ 70°C (TA)
Memory Type: Non-Volatile
Memory Size: 1Mbit
Mounting Type: Surface Mount
Package / Case: 48-BSSOP (0.295", 7.50mm Width)
Packaging: Tube
Produkt ist nicht verfügbar
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STK14D88-NF45ITR STK14D88-NF45ITR Infineon Technologies STK14D88.pdf Description: IC NVSRAM 256KBIT PAR 32SOIC
Memory Organization: 32K x 8
Access Time: 45 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 45ns
Part Status: Obsolete
Supplier Device Package: 32-SOIC
Memory Format: NVSRAM
Technology: NVSRAM (Non-Volatile SRAM)
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 256Kbit
Mounting Type: Surface Mount
Package / Case: 32-SOIC (0.295", 7.50mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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STK14C88-3NF45 STK14C88-3NF45 Infineon Technologies STK14C88-3.pdf Description: IC NVSRAM 256KBIT PAR 32SOIC
DigiKey Programmable: Not Verified
Memory Format: NVSRAM
Technology: NVSRAM (Non-Volatile SRAM)
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: 0°C ~ 70°C (TA)
Memory Type: Non-Volatile
Memory Size: 256Kbit
Mounting Type: Surface Mount
Package / Case: 32-SOIC (0.295", 7.50mm Width)
Packaging: Tube
Memory Organization: 32K x 8
Access Time: 45 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 45ns
Part Status: Obsolete
Supplier Device Package: 32-SOIC
Produkt ist nicht verfügbar
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STK14C88-NF25 STK14C88-NF25 Infineon Technologies DS_428_STK14C88.pdf Description: IC NVSRAM 256KBIT PAR 32SOIC
DigiKey Programmable: Not Verified
Supplier Device Package: 32-SOIC
Memory Format: NVSRAM
Technology: NVSRAM (Non-Volatile SRAM)
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: 0°C ~ 70°C (TA)
Memory Type: Non-Volatile
Memory Size: 256Kbit
Mounting Type: Surface Mount
Package / Case: 32-SOIC (0.295", 7.50mm Width)
Packaging: Tube
Memory Organization: 32K x 8
Access Time: 25 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 25ns
Part Status: Obsolete
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STK14C88-NF35TR STK14C88-NF35TR Infineon Technologies DS_428_STK14C88.pdf Description: IC NVSRAM 256KBIT PAR 32SOIC
DigiKey Programmable: Not Verified
Memory Organization: 32K x 8
Access Time: 35 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 35ns
Part Status: Obsolete
Supplier Device Package: 32-SOIC
Memory Format: NVSRAM
Technology: NVSRAM (Non-Volatile SRAM)
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: 0°C ~ 70°C (TA)
Memory Type: Non-Volatile
Memory Size: 256Kbit
Mounting Type: Surface Mount
Package / Case: 32-SOIC (0.295", 7.50mm Width)
Packaging: Tape & Reel (TR)
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IGW40N60H3FKSA1 IGW40N60H3FKSA1 Infineon Technologies IGW40N60H3_Rev2_1G.pdf?folderId=db3a3043156fd5730115f56849b61941&fileId=db3a3043293a15c401293a9970bb0008 Description: IGBT TRENCH FS 600V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
Supplier Device Package: PG-TO247-3-1
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 19ns/197ns
Switching Energy: 1.68mJ
Test Condition: 400V, 40A, 7.9Ohm, 15V
Gate Charge: 223 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 306 W
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IRF9540NLPBF IRF9540NLPBF Infineon Technologies irf9540nspbf.pdf?fileId=5546d462533600a401535611d92a1dca Description: MOSFET P-CH 100V 23A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 117mOhm @ 14A, 10V
Power Dissipation (Max): 3.1W (Ta), 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
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CY2544QC011 CY2544QC011 Infineon Technologies download Description: IC CLOCK GENERATOR 24QFN
Packaging: Tray
Package / Case: 24-UFQFN Exposed Pad
Mounting Type: Surface Mount
Output: Clock
Frequency - Max: 166MHz
Type: Clock Generator
Input: LVCMOS, Crystal
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.25V ~ 3.6V
Ratio - Input:Output: 1:9
Differential - Input:Output: No/No
Supplier Device Package: 24-QFN (4x4)
PLL: Yes with Bypass
Divider/Multiplier: Yes/No
Part Status: Active
Number of Circuits: 4
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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F3L25R12W1T4B27BOMA1 F3L25R12W1T4B27BOMA1 Infineon Technologies Infineon-F3L25R12W1T4_B27-DS-v02_00-EN.pdf?fileId=5546d4625f2e26bc015f499b0c934063 Description: MODULE IGBT 1200V EASY1B-2
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 25A
NTC Thermistor: Yes
Supplier Device Package: AG-EASY1B
Part Status: Active
Current - Collector (Ic) (Max): 45 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 215 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 1.45 nF @ 25 V
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SPU02N60C3BKMA1 SPU02N60C3BKMA1 Infineon Technologies SPD_U02N60C3_Rev.2.4.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42d79214883 Description: MOSFET N-CH 650V 1.8A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1.1A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 80µA
Supplier Device Package: PG-TO251-3-21
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 12.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 25 V
Produkt ist nicht verfügbar
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CY7C65640A-LFXC CY7C65640A-LFXC Infineon Technologies CY7C65640A.pdf Description: IC USB HUB CONTROLLER HS 56VQFN
Packaging: Tube
Package / Case: 56-VFQFN Exposed Pad
Function: Hub Controller
Interface: USB
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3.15V ~ 3.45V
Protocol: USB
Standards: USB 2.0
Supplier Device Package: 56-QFN (8x8)
Part Status: Obsolete
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IRLB3036PBF IRLB3036PBF Infineon Technologies infineon-irlb3036-datasheet-en.pdf Description: MOSFET N-CH 60V 195A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 165A, 10V
Power Dissipation (Max): 380W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 11210 pF @ 50 V
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IRFB4110PBF IRFB4110PBF Infineon Technologies irfb4110pbf.pdf?fileId=5546d462533600a401535615a9571e0b Description: MOSFET N-CH 100V 120A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 75A, 10V
Power Dissipation (Max): 370W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9620 pF @ 50 V
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IGCM15F60GAXKMA1 IGCM15F60GAXKMA1 Infineon Technologies Infineon-IGCM15F60GA-DS-v01_07-EN.pdf?fileId=5546d4624fb7fef2014fcb15c0597867 Description: IGBT IPM 600V 15A 24-PWRDIP MOD
Packaging: Tube
Package / Case: 24-PowerDIP Module (1.028", 26.10mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2000Vrms
Part Status: Active
Current: 15 A
Voltage: 600 V
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IKCM15F60GAXKMA1 IKCM15F60GAXKMA1 Infineon Technologies Infineon-IKCM15F60GA-DS-v01_02-EN.pdf?fileId=5546d4624fb7fef2014fcb43b29e78c1 Description: IGBT IPM 600V 15A 24-PWRDIP MOD
Packaging: Tube
Package / Case: 24-PowerDIP Module (1.028", 26.10mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2000Vrms
Part Status: Active
Current: 15 A
Voltage: 600 V
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IKP10N60TXKSA1 IKP10N60TXKSA1 Infineon Technologies IKP10N60T+Rev2_3G[1].pdf?folderId=db3a3043156fd5730115f56849b61941&fileId=db3a304323b87bc20123bceea1b13587 Description: IGBT NPT FS 600V 20A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 115 ns
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 10A
Supplier Device Package: PG-TO220-3-1
IGBT Type: NPT, Trench Field Stop
Td (on/off) @ 25°C: 12ns/215ns
Switching Energy: 430µJ
Test Condition: 400V, 10A, 23Ohm, 15V
Gate Charge: 62 nC
Part Status: Active
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 30 A
Power - Max: 110 W
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S29PL127J60BAW000 S29PL127J60BAW000 Infineon Technologies Infineon-S29PL-J_128-_128-_64-_32-MBIT_(8_8_4_2M_X_16_BIT)_3_V_FLASH_WITH_ENHANCED_VERSATILEIO-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed5806154f0&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_e Description: IC FLASH 128MBIT PARALLEL 80FBGA
DigiKey Programmable: Not Verified
Memory Organization: 8M x 16
Access Time: 60 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 60ns
Part Status: Obsolete
Supplier Device Package: 80-FBGA (8x11)
Memory Format: FLASH
Technology: FLASH - NOR
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -25°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 128Mbit
Mounting Type: Surface Mount
Package / Case: 80-VFBGA
Packaging: Tray
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S29PL127J65BAW000 S29PL127J65BAW000 Infineon Technologies Infineon-S29PL-J_128-_128-_64-_32-MBIT_(8_8_4_2M_X_16_BIT)_3_V_FLASH_WITH_ENHANCED_VERSATILEIO-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed5806154f0&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_e Description: IC FLASH 128MBIT PARALLEL 80FBGA
DigiKey Programmable: Not Verified
Memory Organization: 8M x 16
Access Time: 65 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 65ns
Part Status: Obsolete
Supplier Device Package: 80-FBGA (8x11)
Memory Format: FLASH
Technology: FLASH - NOR
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -25°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 128Mbit
Mounting Type: Surface Mount
Package / Case: 80-VFBGA
Packaging: Tray
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S29PL127J70BAW000 S29PL127J70BAW000 Infineon Technologies Infineon-S29PL-J_128-_128-_64-_32-MBIT_(8_8_4_2M_X_16_BIT)_3_V_FLASH_WITH_ENHANCED_VERSATILEIO-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed5806154f0&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_e Description: IC FLASH 128MBIT PARALLEL 80FBGA
DigiKey Programmable: Not Verified
Memory Format: FLASH
Technology: FLASH - NOR
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -25°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 128Mbit
Mounting Type: Surface Mount
Package / Case: 80-VFBGA
Packaging: Tray
Memory Organization: 8M x 16
Access Time: 70 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 70ns
Part Status: Obsolete
Supplier Device Package: 80-FBGA (8x11)
Produkt ist nicht verfügbar
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IRFB4115PBF IRFB4115PBF Infineon Technologies irfb4115pbf.pdf?fileId=5546d462533600a401535615ba6a1e0f Description: MOSFET N-CH 150V 104A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 104A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 62A, 10V
Power Dissipation (Max): 380W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5270 pF @ 50 V
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IRFB4127PBF IRFB4127PBF Infineon Technologies irfb4127pbf.pdf?fileId=5546d462533600a401535615c2ef1e11 Description: MOSFET N-CH 200V 76A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 76A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 44A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5380 pF @ 50 V
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TC1797512F180EFACKXUMA1 Infineon Technologies TC1797_DS_V1+3.pdf?fileId=db3a30431ed1d7b2011efeaa4ad16b6d Description: IC MCU 32BIT 4MB FLASH 416BGA
Number of I/O: 221
Part Status: Obsolete
Supplier Device Package: PG-BGA-416-27
Peripherals: DMA, POR, WDT
Connectivity: ASC, CANbus, EBI/EMI, FlexRay, MLI, MSC, SSC
Voltage - Supply (Vcc/Vdd): 1.42V ~ 1.58V
Core Size: 32-Bit Single-Core
DigiKey Programmable: Not Verified
Data Converters: A/D 4x10b, 44x12b
Core Processor: TriCore™
EEPROM Size: 64K x 8
Program Memory Type: FLASH
Oscillator Type: External
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 224K x 8
Program Memory Size: 4MB (4M x 8)
Speed: 180MHz
Mounting Type: Surface Mount
Package / Case: 416-BGA
Packaging: Tape & Reel (TR)
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IRFB4227PBF IRFB4227PBF Infineon Technologies infineon-irfb4227-datasheet-en.pdf Description: MOSFET N-CH 200V 65A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 46A, 10V
Power Dissipation (Max): 330W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4600 pF @ 25 V
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CY9AF142MBPMC-G-JNE2 CY9AF142MBPMC-G-JNE2 Infineon Technologies Infineon-CY9A140NB_Series_32_Bit_Arm_Cortex_M3_FM3_Microcontroller-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee002d66576&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC MCU 32BIT 160KB FLASH 80LQFP
Packaging: Tray
Number of I/O: 66
Part Status: Active
Supplier Device Package: 80-LQFP (12x12)
Peripherals: LVD, POR, PWM, WDT
Connectivity: CSIO, EBI/EMI, I2C, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
Core Size: 32-Bit Single-Core
Data Converters: A/D 17x12b
Core Processor: ARM® Cortex®-M3
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 16K x 8
Program Memory Size: 160KB (160K x 8)
Speed: 40MHz
Mounting Type: Surface Mount
Package / Case: 80-LQFP
DigiKey Programmable: Not Verified
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IRIDIUMSLM9670TPM20TOBO1 IRIDIUMSLM9670TPM20TOBO1 Infineon Technologies IRIDIUMSLM9670TPM20TOBO1_Web.pdf Description: EVAL IRIDIUM SLM 9670 RASPBERRY
Packaging: Bulk
Function: Transceiver
Type: RF
Contents: Board(s)
Utilized IC / Part: SLM9670
Platform: Raspberry Pi
Part Status: Active
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IRIDIUMSLI9670TPM20TOBO1 IRIDIUMSLI9670TPM20TOBO1 Infineon Technologies IRIDIUMSLI9670TPM20TOBO1_Web.pdf Description: EVAL IRIDIUM SLI 9670 RASPBERRY
Part Status: Active
Platform: Raspberry Pi
Utilized IC / Part: SLI9670
Contents: Board(s)
Type: RF
Function: Transceiver
Packaging: Bulk
Produkt ist nicht verfügbar
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ICE3A0565ZXKLA1 ICE3A0565ZXKLA1 Infineon Technologies CoolSET-F3.pdf?folderId=db3a304412b407950112b4182a3d24f8&fileId=db3a304412b407950112b428f6ba3f30 Description: IC OFFLINE SWITCH FLYBACK 7DIP
Power (Watts): 25 W
Part Status: Not For New Designs
Control Features: Soft Start
Voltage - Start Up: 15 V
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Supplier Device Package: PG-DIP-7-1
Voltage - Supply (Vcc/Vdd): 8.5V ~ 21V
Topology: Flyback
Output Isolation: Isolated
Voltage - Breakdown: 650V
Internal Switch(s): Yes
Frequency - Switching: 100kHz
Duty Cycle: 72%
Operating Temperature: -25°C ~ 130°C (TJ)
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Packaging: Tube
Produkt ist nicht verfügbar
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EVAL3KW2LLCP747TOBO1 EVAL3KW2LLCP747TOBO1 Infineon Technologies Infineon-GeneralDescription_EVAL_3KW_2LLC_P7_47-ATI-v01_00-EN.pdf?fileId=5546d4625b3ca4ec015b5833f488044e Description: EVAL BOARD ICE2QR2280Z XMC4400
Packaging: Bulk
Voltage - Output: 44V ~ 58V
Voltage - Input: 350V ~ 400V
Current - Output: 55A
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: ICE2QR2280Z, XMC4400
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1 Isolated Output
Part Status: Active
Power - Output: 3kW
Contents: Board(s)
Produkt ist nicht verfügbar
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EVAL600W12VLLCP7TOBO1 EVAL600W12VLLCP7TOBO1 Infineon Technologies Infineon-ApplicationNote_EvaluationBoard_EVAL_600W_12V_LLC_P7-AN-v01_00-EN.pdf?fileId=5546d4625b10283a015b1e4f218b0035 Description: EVAL BOARD ICE2HS01G ICE2QR2280Z
Packaging: Bulk
Voltage - Output: 12V
Voltage - Input: 350V ~ 410V
Current - Output: 50A
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: ICE2HS01G, ICE2QR2280Z
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1 Isolated Output
Part Status: Active
Power - Output: 600W
Contents: Board(s)
Produkt ist nicht verfügbar
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EVAL800WPFCP7TOBO1 EVAL800WPFCP7TOBO1 Infineon Technologies Infineon-ApplicationNote_EvaluationBoard_EVAL_800W_PFC_P7-AN-v01_00-EN.pdf?fileId=5546d4625b10283a015b141c54790da7 Description: EVAL BRD ICE2QR2280Z ICE3PCS01G
Packaging: Bulk
Function: Power Factor Correction
Type: Power Management
Utilized IC / Part: ICE2QR2280Z, ICE3PCS01G
Supplied Contents: Board(s)
Part Status: Active
Contents: Board(s)
Produkt ist nicht verfügbar
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IRF250P225 IRF250P225 Infineon Technologies IR_PartNumberingSystem.pdf Description: MOSFET N-CH 250V 69A TO247AC
Rds On (Max) @ Id, Vgs: 22mOhm @ 41A, 10V
Current - Continuous Drain (Id) @ 25°C: 69A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 4897 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247AC
Vgs(th) (Max) @ Id: 4V @ 270µA
Power Dissipation (Max): 313W (Tc)
Produkt ist nicht verfügbar
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IRF250P224 IRF250P224 Infineon Technologies Infineon-IRF250P224-DS-v01_00-EN.pdf?fileId=5546d4625a888733015a8bb640137c6e Description: MOSFET N-CH 250V 96A TO247AC
Input Capacitance (Ciss) (Max) @ Vds: 9915 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 203 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247AC
Vgs(th) (Max) @ Id: 4V @ 270µA
Power Dissipation (Max): 313W (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 58A, 10V
Current - Continuous Drain (Id) @ 25°C: 96A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Produkt ist nicht verfügbar
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DZ435N40KHPSA1 DZ435N40KHPSA1 Infineon Technologies Infineon-DZ435N-DS-v03_02-EN.pdf?fileId=db3a3043243b5f170124e2ccd4426304 Description: DIODE GEN PURP 4KV 700A MODULE
Packaging: Tray
Current - Reverse Leakage @ Vr: 50 mA @ 4000 V
Voltage - Forward (Vf) (Max) @ If: 1.71 V @ 1200 A
Voltage - DC Reverse (Vr) (Max): 4000 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: Module
Current - Average Rectified (Io): 700A
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: Module
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IKW15T120FKSA1 IKW15T120FKSA1 Infineon Technologies fundamentals-of-power-semiconductors Description: IGBT NPT FS 1200V 30A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 140 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 15A
Supplier Device Package: PG-TO247-3-1
IGBT Type: NPT, Trench Field Stop
Td (on/off) @ 25°C: 50ns/520ns
Switching Energy: 2.7mJ
Test Condition: 600V, 15A, 56Ohm, 15V
Gate Charge: 85 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 110 W
Produkt ist nicht verfügbar
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CY9BF122LQN-G-AVE2 CY9BF122LQN-G-AVE2 Infineon Technologies Infineon-CY9B120M_Series_32_Bit_Arm_Cortex_M3_FM3_Microcontroller-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0edfa79064e9&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC MCU 32BIT 160KB FLASH 64QFN
Packaging: Tray
Package / Case: 64-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 72MHz
Program Memory Size: 160KB (160K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 23x12b; D/A 2x10b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 64-QFN (9x9)
Part Status: Active
Number of I/O: 50
DigiKey Programmable: Not Verified
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2+16.95 EUR
10+13.19 EUR
25+12.23 EUR
100+11.21 EUR
260+10.7 EUR
520+10.4 EUR
1040+10.16 EUR
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CY9BF124KQN-G-AVE2 CY9BF124KQN-G-AVE2 Infineon Technologies Infineon-CY9B120M_Series_32_Bit_Arm_Cortex_M3_FM3_Microcontroller-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0edfa79064e9&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC MCU 32BIT 288KB FLASH 48QFN
DigiKey Programmable: Not Verified
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 32K x 8
Program Memory Size: 288KB (288K x 8)
Speed: 72MHz
Mounting Type: Surface Mount
Package / Case: 48-VFQFN Exposed Pad
Packaging: Tray
Number of I/O: 35
Part Status: Active
Supplier Device Package: 48-QFN (7x7)
Peripherals: DMA, LVD, POR, PWM, WDT
Connectivity: CSIO, I2C, LINbus, UART/USART
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit Single-Core
Data Converters: A/D 14x12b; D/A 2x10b
Core Processor: ARM® Cortex®-M3
Produkt ist nicht verfügbar
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CY9BF122MPMC1-G-JNE2 CY9BF122MPMC1-G-JNE2 Infineon Technologies Infineon-CY9B120M_Series_32_Bit_Arm_Cortex_M3_FM3_Microcontroller-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0edfa79064e9&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC MCU 32BIT 160KB FLASH 80LQFP
Number of I/O: 65
Part Status: Active
Supplier Device Package: 80-LQFP (14x14)
Peripherals: DMA, LVD, POR, PWM, WDT
Connectivity: CSIO, I2C, LINbus, UART/USART
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit Single-Core
Data Converters: A/D 26x12b; D/A 2x10b
Core Processor: ARM® Cortex®-M3
DigiKey Programmable: Not Verified
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 16K x 8
Program Memory Size: 160KB (160K x 8)
Speed: 72MHz
Mounting Type: Surface Mount
Package / Case: 80-LQFP
Packaging: Tray
Produkt ist nicht verfügbar
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FZ750R65KE3NOSA1 FZ750R65KE3NOSA1 Infineon Technologies Infineon-FZ750R65KE3-DS-v03_01-EN.pdf?fileId=db3a304325afd6e00126461fd3936974 Description: IGBT MOD 6500V 750A A-IHV190-6
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -50°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 750A
NTC Thermistor: No
Supplier Device Package: Module
Part Status: Active
Current - Collector (Ic) (Max): 750 A
Voltage - Collector Emitter Breakdown (Max): 6500 V
Power - Max: 14500 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 205 nF @ 25 V
auf Bestellung 1 Stücke:
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1+5226.08 EUR
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IPW60R099C6FKSA1 IPW60R099C6FKSA1 Infineon Technologies IPB60R099C6_2_1.pdf?folderId=db3a3043163797a6011638933eda014b&fileId=db3a30432313ff5e012394d25bd3069e Description: MOSFET N-CH 600V 37.9A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37.9A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 18.1A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1.21mA
Supplier Device Package: PG-TO247-3-1
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 119 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2660 pF @ 100 V
auf Bestellung 445 Stücke:
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2+14.6 EUR
30+8.43 EUR
120+7.07 EUR
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IRF7665S2TRPBF IRF7665S2TR%281%29PbF.pdf
IRF7665S2TRPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 4.1A DIRECTFET
Input Capacitance (Ciss) (Max) @ Vds: 515 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: DIRECTFET SB
Vgs(th) (Max) @ Id: 5V @ 25µA
Power Dissipation (Max): 2.4W (Ta), 30W (Tc)
Rds On (Max) @ Id, Vgs: 62mOhm @ 8.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta), 14.4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DirectFET™ Isometric SB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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IKW50N65H5FKSA1 DS_IKW50N65H5+1.1.pdf?folderId=db3a3043156fd5730115f56849b61941&fileId=db3a30433afc7e3e013b1e3073ec5951
IKW50N65H5FKSA1
Hersteller: Infineon Technologies
Description: IGBT 650V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 57 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
Supplier Device Package: PG-TO247-3
Td (on/off) @ 25°C: 21ns/180ns
Switching Energy: 520µJ (on), 180µJ (off)
Test Condition: 400V, 25A, 12Ohm, 15V
Gate Charge: 120 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 305 W
auf Bestellung 7434 Stücke:
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AnzahlPrivatkunde
3+9.32 EUR
30+5.22 EUR
120+4.32 EUR
510+3.99 EUR
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IKW50N65F5FKSA1 DS_IKW50N65F5+1.1.pdf?folderId=db3a3043156fd5730115f56849b61941&fileId=db3a30433afc7e3e013afe09fcdb00e5
IKW50N65F5FKSA1
Hersteller: Infineon Technologies
Description: IGBT 650V 80A TO247-3
Reverse Recovery Time (trr): 52 ns
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Power - Max: 305 W
Current - Collector Pulsed (Icm): 150 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 80 A
Part Status: Active
Gate Charge: 120 nC
Test Condition: 400V, 25A, 12Ohm, 15V
Switching Energy: 490µJ (on), 160µJ (off)
Td (on/off) @ 25°C: 21ns/175ns
Supplier Device Package: PG-TO247-3
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
auf Bestellung 10 Stücke:
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AnzahlPrivatkunde
3+10.03 EUR
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IKW50N65EH5XKSA1 Infineon-IKW50N65EH5-DS-v02_01-EN.pdf?fileId=5546d4624d6fc3d5014df77c98ca4461
IKW50N65EH5XKSA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH 650V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 81 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench
Td (on/off) @ 25°C: 25ns/172ns
Switching Energy: 1.5mJ (on), 500µJ (off)
Test Condition: 400V, 50A, 12Ohm, 15V
Gate Charge: 120 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 275 W
auf Bestellung 162 Stücke:
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AnzahlPrivatkunde
2+11.08 EUR
30+6.25 EUR
120+5.19 EUR
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IKW50N65ES5XKSA1 Infineon-IKW50N65ES5-DS-v02_03-EN.pdf?fileId=5546d4624fb7fef20150147874f758c0
IKW50N65ES5XKSA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH 650V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 70 ns
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 50A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench
Td (on/off) @ 25°C: 20ns/127ns
Switching Energy: 1.23mJ (on), 550µJ (off)
Test Condition: 400V, 50A, 8.2Ohm, 15V
Gate Charge: 120 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 274 W
auf Bestellung 239 Stücke:
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2+11.08 EUR
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120+5.19 EUR
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IKZ50N65EH5XKSA1 Infineon-IKZ50N65EH5-DS-v02_01-EN.pdf?fileId=5546d4624933b87501497a12010f201a
IKZ50N65EH5XKSA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH 650V 85A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 53 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
Supplier Device Package: PG-TO247-4
IGBT Type: Trench
Td (on/off) @ 25°C: 20ns/250ns
Switching Energy: 410µJ (on), 190µJ (off)
Test Condition: 400V, 25A, 12Ohm, 15V
Gate Charge: 109 nC
Part Status: Active
Current - Collector (Ic) (Max): 85 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 273 W
auf Bestellung 130 Stücke:
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AnzahlPrivatkunde
2+11.82 EUR
30+6.71 EUR
120+5.58 EUR
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BSP62H6327XTSA1 bsp60_bsp61_bsp62.pdf?folderId=db3a30431441fb5d011445c30f210183&fileId=db3a30431441fb5d011445e1c2e7018a
BSP62H6327XTSA1
Hersteller: Infineon Technologies
Description: TRANS PNP DARL 80V 1A SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.8V @ 1mA, 1A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: PG-SOT223-4
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.5 W
Produkt ist nicht verfügbar
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AUIRFS3107-7P AUIRFS3107-7P.pdf
AUIRFS3107-7P
Hersteller: Infineon Technologies
Description: MOSFET N-CH 75V 240A D2PAK
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 9200 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Drain to Source Voltage (Vdss): 75 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Last Time Buy
Supplier Device Package: D2PAK (7-Lead)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 370W (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 160A, 10V
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Packaging: Tube
Produkt ist nicht verfügbar
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SPW47N60C3FKSA1 SPW47N60C3_Rev.2.4.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42dff93492f
SPW47N60C3FKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 47A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 30A, 10V
Power Dissipation (Max): 415W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 2.7mA
Supplier Device Package: PG-TO247-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 320 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 25 V
auf Bestellung 8762 Stücke:
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1+25.16 EUR
30+15.2 EUR
120+13.02 EUR
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FF900R12IP4BOSA2 Infineon-FF900R12IP4-DS-v02_04-en_de.pdf?fileId=db3a30431f848401011febb861df3edd
FF900R12IP4BOSA2
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 900A 5100W MOD
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 900A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 900 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 5100 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 54 nF @ 25 V
auf Bestellung 30 Stücke:
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AnzahlPrivatkunde
1+793.44 EUR
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BDP948H6327XTSA1 bdp948_bdp950_bdp954.pdf?folderId=db3a304314dca38901155ffc06d51dc7&fileId=db3a304314dca38901156149b3e81f67
BDP948H6327XTSA1
Hersteller: Infineon Technologies
Description: TRANS PNP 45V 3A PG-SOT223-4-10
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 500mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: PG-SOT223-4-10
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 5 W
Produkt ist nicht verfügbar
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S29JL064J55BHI000 Infineon-S29JL064J_64_Mb_(8M_x_8_Bit_4M_x_16_Bit)_3_V_Simultaneous_Read_Write_Flash-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6688c56c7&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integ
S29JL064J55BHI000
Hersteller: Infineon Technologies
Description: IC FLASH 64MBIT PARALLEL 48FBGA
Memory Organization: 8M x 8, 4M x 16
Access Time: 55 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 55ns
Part Status: Active
Supplier Device Package: 48-FBGA (8.15x6.15)
Memory Format: FLASH
Technology: FLASH - NOR
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 64Mbit
Mounting Type: Surface Mount
Package / Case: 48-VFBGA
Packaging: Tray
DigiKey Programmable: Not Verified
auf Bestellung 3042 Stücke:
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2+16.71 EUR
10+15.37 EUR
25+15.05 EUR
40+15.01 EUR
80+13.46 EUR
338+13.05 EUR
676+12.41 EUR
1014+11.98 EUR
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S29JL064J55TFI000 Infineon-S29JL064J_64_Mb_(8M_x_8_Bit_4M_x_16_Bit)_3_V_Simultaneous_Read_Write_Flash-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6688c56c7&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integ
S29JL064J55TFI000
Hersteller: Infineon Technologies
Description: IC FLASH 64MBIT PARALLEL 48TSOP
Memory Organization: 8M x 8, 4M x 16
Access Time: 55 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 55ns
Part Status: Active
Supplier Device Package: 48-TSOP
Memory Format: FLASH
Technology: FLASH - NOR
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 64Mbit
Mounting Type: Surface Mount
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Packaging: Tray
DigiKey Programmable: Verified
auf Bestellung 1219 Stücke:
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2+14.55 EUR
10+13.54 EUR
25+13.14 EUR
96+12.53 EUR
192+12.22 EUR
288+12.04 EUR
576+11.75 EUR
1056+11.48 EUR
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S25FL064LABNFV010 Infineon-S25FL064L_64-Mbit_(8-Mbyte)_3.0_V_FL-L_SPI_Flash_Memory-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee2d2846996&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
S25FL064LABNFV010
Hersteller: Infineon Technologies
Description: IC FLASH 64MBIT SPI/QUAD 8WSON
Memory Organization: 8M x 8
Memory Interface: SPI - Quad I/O, QPI
Part Status: Active
Supplier Device Package: 8-WSON (5x6)
Memory Format: FLASH
Clock Frequency: 108 MHz
Technology: FLASH - NOR
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 105°C (TA)
Memory Type: Non-Volatile
Memory Size: 64Mbit
Mounting Type: Surface Mount
Package / Case: 8-WFDFN Exposed Pad
Packaging: Tray
DigiKey Programmable: Not Verified
auf Bestellung 8504 Stücke:
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6+3.56 EUR
10+3.24 EUR
25+3.15 EUR
40+3.14 EUR
80+2.81 EUR
230+2.8 EUR
490+2.75 EUR
980+2.64 EUR
4900+2.45 EUR
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IRFP4768PBF irfp4768pbf.pdf?fileId=5546d462533600a40153562c959b2021
IRFP4768PBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 250V 93A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 93A (Tc)
Rds On (Max) @ Id, Vgs: 17.5mOhm @ 56A, 10V
Power Dissipation (Max): 520W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10880 pF @ 50 V
Produkt ist nicht verfügbar
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IPA60R1K0CEXKSA1 Infineon-IPA60R1K0CE-DS-v02_00-EN.pdf?fileId=5546d462533600a401537a8be0c671ef
IPA60R1K0CEXKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 6.8A TO220
Rds On (Max) @ Id, Vgs: 1Ohm @ 1.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO220-FP
Vgs(th) (Max) @ Id: 3.5V @ 130µA
Power Dissipation (Max): 26W (Tc)
auf Bestellung 336 Stücke:
Lieferzeit 10-14 Tag (e)
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9+2.39 EUR
50+1.19 EUR
100+1.11 EUR
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STK14C88-5K45M download
STK14C88-5K45M
Hersteller: Infineon Technologies
Description: IC NVSRAM 256KBIT PAR 32CDIP
DigiKey Programmable: Not Verified
Memory Organization: 32K x 8
Access Time: 45 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 45ns
Part Status: Obsolete
Supplier Device Package: 32-CDIP
Memory Format: NVSRAM
Technology: NVSRAM (Non-Volatile SRAM)
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -55°C ~ 125°C (TA)
Memory Type: Non-Volatile
Memory Size: 256Kbit
Mounting Type: Through Hole
Package / Case: 32-CDIP (0.300", 7.62mm)
Packaging: Tube
Produkt ist nicht verfügbar
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STK14C88-5C45M DS_428_STK14C88.pdf
STK14C88-5C45M
Hersteller: Infineon Technologies
Description: IC NVSRAM 256KBIT PAR 32CDIP
DigiKey Programmable: Not Verified
Memory Organization: 32K x 8
Access Time: 45 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 45ns
Part Status: Obsolete
Memory Size: 256Kbit
Supplier Device Package: 32-CDIP
Memory Format: NVSRAM
Technology: NVSRAM (Non-Volatile SRAM)
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -55°C ~ 125°C (TA)
Memory Type: Non-Volatile
Mounting Type: Through Hole
Package / Case: 32-CDIP (0.300", 7.62mm)
Packaging: Tube
Produkt ist nicht verfügbar
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STK14C88-3NF35TR STK14C88-3.pdf
STK14C88-3NF35TR
Hersteller: Infineon Technologies
Description: IC NVSRAM 256KBIT PAR 32SOIC
DigiKey Programmable: Not Verified
Write Cycle Time - Word, Page: 35ns
Part Status: Obsolete
Supplier Device Package: 32-SOIC
Memory Format: NVSRAM
Technology: NVSRAM (Non-Volatile SRAM)
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: 0°C ~ 70°C (TA)
Memory Type: Non-Volatile
Memory Size: 256Kbit
Mounting Type: Surface Mount
Package / Case: 32-SOIC (0.295", 7.50mm Width)
Packaging: Tape & Reel (TR)
Memory Organization: 32K x 8
Access Time: 35 ns
Memory Interface: Parallel
Produkt ist nicht verfügbar
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STK14C88-NF35U STK14C88-NF35U.pdf
STK14C88-NF35U
Hersteller: Infineon Technologies
Description: IC NVSRAM 256KBIT PAR 32SOIC
DigiKey Programmable: Not Verified
Memory Organization: 32K x 8
Access Time: 35 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 35ns
Part Status: Obsolete
Supplier Device Package: 32-SOIC
Memory Format: NVSRAM
Technology: NVSRAM (Non-Volatile SRAM)
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -55°C ~ 125°C (TA)
Memory Type: Non-Volatile
Memory Size: 256Kbit
Mounting Type: Surface Mount
Package / Case: 32-SOIC (0.295", 7.50mm Width)
Packaging: Tube
Produkt ist nicht verfügbar
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STK14D88-NF45TR STK14D88.pdf
STK14D88-NF45TR
Hersteller: Infineon Technologies
Description: IC NVSRAM 256KBIT PAR 32SOIC
Memory Organization: 32K x 8
Access Time: 45 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 45ns
Part Status: Obsolete
Supplier Device Package: 32-SOIC
Memory Format: NVSRAM
Technology: NVSRAM (Non-Volatile SRAM)
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: 0°C ~ 70°C (TA)
Memory Type: Non-Volatile
Memory Size: 256Kbit
Mounting Type: Surface Mount
Package / Case: 32-SOIC (0.295", 7.50mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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STK14CA8-RF35 STK14CA8.pdf
STK14CA8-RF35
Hersteller: Infineon Technologies
Description: IC NVSRAM 1MBIT PARALLEL 48SSOP
Memory Organization: 128K x 8
Access Time: 35 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 35ns
Part Status: Obsolete
Supplier Device Package: 48-SSOP
Memory Format: NVSRAM
Technology: NVSRAM (Non-Volatile SRAM)
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: 0°C ~ 70°C (TA)
Memory Type: Non-Volatile
Memory Size: 1Mbit
Mounting Type: Surface Mount
Package / Case: 48-BSSOP (0.295", 7.50mm Width)
Packaging: Tube
Produkt ist nicht verfügbar
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STK14D88-NF45ITR STK14D88.pdf
STK14D88-NF45ITR
Hersteller: Infineon Technologies
Description: IC NVSRAM 256KBIT PAR 32SOIC
Memory Organization: 32K x 8
Access Time: 45 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 45ns
Part Status: Obsolete
Supplier Device Package: 32-SOIC
Memory Format: NVSRAM
Technology: NVSRAM (Non-Volatile SRAM)
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 256Kbit
Mounting Type: Surface Mount
Package / Case: 32-SOIC (0.295", 7.50mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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STK14C88-3NF45 STK14C88-3.pdf
STK14C88-3NF45
Hersteller: Infineon Technologies
Description: IC NVSRAM 256KBIT PAR 32SOIC
DigiKey Programmable: Not Verified
Memory Format: NVSRAM
Technology: NVSRAM (Non-Volatile SRAM)
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: 0°C ~ 70°C (TA)
Memory Type: Non-Volatile
Memory Size: 256Kbit
Mounting Type: Surface Mount
Package / Case: 32-SOIC (0.295", 7.50mm Width)
Packaging: Tube
Memory Organization: 32K x 8
Access Time: 45 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 45ns
Part Status: Obsolete
Supplier Device Package: 32-SOIC
Produkt ist nicht verfügbar
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STK14C88-NF25 DS_428_STK14C88.pdf
STK14C88-NF25
Hersteller: Infineon Technologies
Description: IC NVSRAM 256KBIT PAR 32SOIC
DigiKey Programmable: Not Verified
Supplier Device Package: 32-SOIC
Memory Format: NVSRAM
Technology: NVSRAM (Non-Volatile SRAM)
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: 0°C ~ 70°C (TA)
Memory Type: Non-Volatile
Memory Size: 256Kbit
Mounting Type: Surface Mount
Package / Case: 32-SOIC (0.295", 7.50mm Width)
Packaging: Tube
Memory Organization: 32K x 8
Access Time: 25 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 25ns
Part Status: Obsolete
Produkt ist nicht verfügbar
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STK14C88-NF35TR DS_428_STK14C88.pdf
STK14C88-NF35TR
Hersteller: Infineon Technologies
Description: IC NVSRAM 256KBIT PAR 32SOIC
DigiKey Programmable: Not Verified
Memory Organization: 32K x 8
Access Time: 35 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 35ns
Part Status: Obsolete
Supplier Device Package: 32-SOIC
Memory Format: NVSRAM
Technology: NVSRAM (Non-Volatile SRAM)
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: 0°C ~ 70°C (TA)
Memory Type: Non-Volatile
Memory Size: 256Kbit
Mounting Type: Surface Mount
Package / Case: 32-SOIC (0.295", 7.50mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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IGW40N60H3FKSA1 IGW40N60H3_Rev2_1G.pdf?folderId=db3a3043156fd5730115f56849b61941&fileId=db3a3043293a15c401293a9970bb0008
IGW40N60H3FKSA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 600V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
Supplier Device Package: PG-TO247-3-1
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 19ns/197ns
Switching Energy: 1.68mJ
Test Condition: 400V, 40A, 7.9Ohm, 15V
Gate Charge: 223 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 306 W
auf Bestellung 174 Stücke:
Lieferzeit 10-14 Tag (e)
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3+9.82 EUR
30+5.5 EUR
120+4.53 EUR
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IRF9540NLPBF irf9540nspbf.pdf?fileId=5546d462533600a401535611d92a1dca
IRF9540NLPBF
Hersteller: Infineon Technologies
Description: MOSFET P-CH 100V 23A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 117mOhm @ 14A, 10V
Power Dissipation (Max): 3.1W (Ta), 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
Produkt ist nicht verfügbar
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CY2544QC011 download
CY2544QC011
Hersteller: Infineon Technologies
Description: IC CLOCK GENERATOR 24QFN
Packaging: Tray
Package / Case: 24-UFQFN Exposed Pad
Mounting Type: Surface Mount
Output: Clock
Frequency - Max: 166MHz
Type: Clock Generator
Input: LVCMOS, Crystal
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.25V ~ 3.6V
Ratio - Input:Output: 1:9
Differential - Input:Output: No/No
Supplier Device Package: 24-QFN (4x4)
PLL: Yes with Bypass
Divider/Multiplier: Yes/No
Part Status: Active
Number of Circuits: 4
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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F3L25R12W1T4B27BOMA1 Infineon-F3L25R12W1T4_B27-DS-v02_00-EN.pdf?fileId=5546d4625f2e26bc015f499b0c934063
F3L25R12W1T4B27BOMA1
Hersteller: Infineon Technologies
Description: MODULE IGBT 1200V EASY1B-2
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 25A
NTC Thermistor: Yes
Supplier Device Package: AG-EASY1B
Part Status: Active
Current - Collector (Ic) (Max): 45 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 215 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 1.45 nF @ 25 V
auf Bestellung 39 Stücke:
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AnzahlPrivatkunde
1+84.17 EUR
24+57.66 EUR
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SPU02N60C3BKMA1 SPD_U02N60C3_Rev.2.4.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42d79214883
SPU02N60C3BKMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 1.8A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1.1A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 80µA
Supplier Device Package: PG-TO251-3-21
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 12.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 25 V
Produkt ist nicht verfügbar
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CY7C65640A-LFXC CY7C65640A.pdf
CY7C65640A-LFXC
Hersteller: Infineon Technologies
Description: IC USB HUB CONTROLLER HS 56VQFN
Packaging: Tube
Package / Case: 56-VFQFN Exposed Pad
Function: Hub Controller
Interface: USB
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3.15V ~ 3.45V
Protocol: USB
Standards: USB 2.0
Supplier Device Package: 56-QFN (8x8)
Part Status: Obsolete
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IRLB3036PBF infineon-irlb3036-datasheet-en.pdf
IRLB3036PBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 195A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 165A, 10V
Power Dissipation (Max): 380W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 11210 pF @ 50 V
auf Bestellung 1895 Stücke:
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3+8.69 EUR
10+5.75 EUR
100+4.07 EUR
500+3.34 EUR
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IRFB4110PBF irfb4110pbf.pdf?fileId=5546d462533600a401535615a9571e0b
IRFB4110PBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 120A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 75A, 10V
Power Dissipation (Max): 370W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9620 pF @ 50 V
auf Bestellung 1781 Stücke:
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3+7.52 EUR
50+3.82 EUR
100+3.46 EUR
500+2.83 EUR
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IGCM15F60GAXKMA1 Infineon-IGCM15F60GA-DS-v01_07-EN.pdf?fileId=5546d4624fb7fef2014fcb15c0597867
IGCM15F60GAXKMA1
Hersteller: Infineon Technologies
Description: IGBT IPM 600V 15A 24-PWRDIP MOD
Packaging: Tube
Package / Case: 24-PowerDIP Module (1.028", 26.10mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2000Vrms
Part Status: Active
Current: 15 A
Voltage: 600 V
auf Bestellung 285 Stücke:
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1+28.67 EUR
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112+14.96 EUR
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IKCM15F60GAXKMA1 Infineon-IKCM15F60GA-DS-v01_02-EN.pdf?fileId=5546d4624fb7fef2014fcb43b29e78c1
IKCM15F60GAXKMA1
Hersteller: Infineon Technologies
Description: IGBT IPM 600V 15A 24-PWRDIP MOD
Packaging: Tube
Package / Case: 24-PowerDIP Module (1.028", 26.10mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2000Vrms
Part Status: Active
Current: 15 A
Voltage: 600 V
auf Bestellung 284 Stücke:
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1+26.26 EUR
14+20.06 EUR
28+19.06 EUR
112+17.56 EUR
252+16.92 EUR
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IKP10N60TXKSA1 IKP10N60T+Rev2_3G[1].pdf?folderId=db3a3043156fd5730115f56849b61941&fileId=db3a304323b87bc20123bceea1b13587
IKP10N60TXKSA1
Hersteller: Infineon Technologies
Description: IGBT NPT FS 600V 20A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 115 ns
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 10A
Supplier Device Package: PG-TO220-3-1
IGBT Type: NPT, Trench Field Stop
Td (on/off) @ 25°C: 12ns/215ns
Switching Energy: 430µJ
Test Condition: 400V, 10A, 23Ohm, 15V
Gate Charge: 62 nC
Part Status: Active
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 30 A
Power - Max: 110 W
auf Bestellung 43 Stücke:
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6+3.77 EUR
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S29PL127J60BAW000 Infineon-S29PL-J_128-_128-_64-_32-MBIT_(8_8_4_2M_X_16_BIT)_3_V_FLASH_WITH_ENHANCED_VERSATILEIO-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed5806154f0&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_e
S29PL127J60BAW000
Hersteller: Infineon Technologies
Description: IC FLASH 128MBIT PARALLEL 80FBGA
DigiKey Programmable: Not Verified
Memory Organization: 8M x 16
Access Time: 60 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 60ns
Part Status: Obsolete
Supplier Device Package: 80-FBGA (8x11)
Memory Format: FLASH
Technology: FLASH - NOR
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -25°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 128Mbit
Mounting Type: Surface Mount
Package / Case: 80-VFBGA
Packaging: Tray
Produkt ist nicht verfügbar
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S29PL127J65BAW000 Infineon-S29PL-J_128-_128-_64-_32-MBIT_(8_8_4_2M_X_16_BIT)_3_V_FLASH_WITH_ENHANCED_VERSATILEIO-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed5806154f0&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_e
S29PL127J65BAW000
Hersteller: Infineon Technologies
Description: IC FLASH 128MBIT PARALLEL 80FBGA
DigiKey Programmable: Not Verified
Memory Organization: 8M x 16
Access Time: 65 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 65ns
Part Status: Obsolete
Supplier Device Package: 80-FBGA (8x11)
Memory Format: FLASH
Technology: FLASH - NOR
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -25°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 128Mbit
Mounting Type: Surface Mount
Package / Case: 80-VFBGA
Packaging: Tray
Produkt ist nicht verfügbar
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S29PL127J70BAW000 Infineon-S29PL-J_128-_128-_64-_32-MBIT_(8_8_4_2M_X_16_BIT)_3_V_FLASH_WITH_ENHANCED_VERSATILEIO-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed5806154f0&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_e
S29PL127J70BAW000
Hersteller: Infineon Technologies
Description: IC FLASH 128MBIT PARALLEL 80FBGA
DigiKey Programmable: Not Verified
Memory Format: FLASH
Technology: FLASH - NOR
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -25°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 128Mbit
Mounting Type: Surface Mount
Package / Case: 80-VFBGA
Packaging: Tray
Memory Organization: 8M x 16
Access Time: 70 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 70ns
Part Status: Obsolete
Supplier Device Package: 80-FBGA (8x11)
Produkt ist nicht verfügbar
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IRFB4115PBF irfb4115pbf.pdf?fileId=5546d462533600a401535615ba6a1e0f
IRFB4115PBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 150V 104A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 104A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 62A, 10V
Power Dissipation (Max): 380W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5270 pF @ 50 V
Produkt ist nicht verfügbar
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IRFB4127PBF irfb4127pbf.pdf?fileId=5546d462533600a401535615c2ef1e11
IRFB4127PBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 200V 76A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 76A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 44A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5380 pF @ 50 V
auf Bestellung 31 Stücke:
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AnzahlPrivatkunde
3+9.45 EUR
10+6.26 EUR
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TC1797512F180EFACKXUMA1 TC1797_DS_V1+3.pdf?fileId=db3a30431ed1d7b2011efeaa4ad16b6d
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 4MB FLASH 416BGA
Number of I/O: 221
Part Status: Obsolete
Supplier Device Package: PG-BGA-416-27
Peripherals: DMA, POR, WDT
Connectivity: ASC, CANbus, EBI/EMI, FlexRay, MLI, MSC, SSC
Voltage - Supply (Vcc/Vdd): 1.42V ~ 1.58V
Core Size: 32-Bit Single-Core
DigiKey Programmable: Not Verified
Data Converters: A/D 4x10b, 44x12b
Core Processor: TriCore™
EEPROM Size: 64K x 8
Program Memory Type: FLASH
Oscillator Type: External
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 224K x 8
Program Memory Size: 4MB (4M x 8)
Speed: 180MHz
Mounting Type: Surface Mount
Package / Case: 416-BGA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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IRFB4227PBF infineon-irfb4227-datasheet-en.pdf
IRFB4227PBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 200V 65A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 46A, 10V
Power Dissipation (Max): 330W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4600 pF @ 25 V
auf Bestellung 6155 Stücke:
Lieferzeit 10-14 Tag (e)
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4+6.53 EUR
50+3.27 EUR
100+2.95 EUR
500+2.4 EUR
1000+2.23 EUR
2000+2.07 EUR
5000+1.93 EUR
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CY9AF142MBPMC-G-JNE2 Infineon-CY9A140NB_Series_32_Bit_Arm_Cortex_M3_FM3_Microcontroller-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee002d66576&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY9AF142MBPMC-G-JNE2
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 160KB FLASH 80LQFP
Packaging: Tray
Number of I/O: 66
Part Status: Active
Supplier Device Package: 80-LQFP (12x12)
Peripherals: LVD, POR, PWM, WDT
Connectivity: CSIO, EBI/EMI, I2C, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
Core Size: 32-Bit Single-Core
Data Converters: A/D 17x12b
Core Processor: ARM® Cortex®-M3
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 16K x 8
Program Memory Size: 160KB (160K x 8)
Speed: 40MHz
Mounting Type: Surface Mount
Package / Case: 80-LQFP
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IRIDIUMSLM9670TPM20TOBO1 IRIDIUMSLM9670TPM20TOBO1_Web.pdf
IRIDIUMSLM9670TPM20TOBO1
Hersteller: Infineon Technologies
Description: EVAL IRIDIUM SLM 9670 RASPBERRY
Packaging: Bulk
Function: Transceiver
Type: RF
Contents: Board(s)
Utilized IC / Part: SLM9670
Platform: Raspberry Pi
Part Status: Active
auf Bestellung 10 Stücke:
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1+143.11 EUR
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IRIDIUMSLI9670TPM20TOBO1 IRIDIUMSLI9670TPM20TOBO1_Web.pdf
IRIDIUMSLI9670TPM20TOBO1
Hersteller: Infineon Technologies
Description: EVAL IRIDIUM SLI 9670 RASPBERRY
Part Status: Active
Platform: Raspberry Pi
Utilized IC / Part: SLI9670
Contents: Board(s)
Type: RF
Function: Transceiver
Packaging: Bulk
Produkt ist nicht verfügbar
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ICE3A0565ZXKLA1 CoolSET-F3.pdf?folderId=db3a304412b407950112b4182a3d24f8&fileId=db3a304412b407950112b428f6ba3f30
ICE3A0565ZXKLA1
Hersteller: Infineon Technologies
Description: IC OFFLINE SWITCH FLYBACK 7DIP
Power (Watts): 25 W
Part Status: Not For New Designs
Control Features: Soft Start
Voltage - Start Up: 15 V
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Supplier Device Package: PG-DIP-7-1
Voltage - Supply (Vcc/Vdd): 8.5V ~ 21V
Topology: Flyback
Output Isolation: Isolated
Voltage - Breakdown: 650V
Internal Switch(s): Yes
Frequency - Switching: 100kHz
Duty Cycle: 72%
Operating Temperature: -25°C ~ 130°C (TJ)
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Packaging: Tube
Produkt ist nicht verfügbar
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EVAL3KW2LLCP747TOBO1 Infineon-GeneralDescription_EVAL_3KW_2LLC_P7_47-ATI-v01_00-EN.pdf?fileId=5546d4625b3ca4ec015b5833f488044e
EVAL3KW2LLCP747TOBO1
Hersteller: Infineon Technologies
Description: EVAL BOARD ICE2QR2280Z XMC4400
Packaging: Bulk
Voltage - Output: 44V ~ 58V
Voltage - Input: 350V ~ 400V
Current - Output: 55A
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: ICE2QR2280Z, XMC4400
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1 Isolated Output
Part Status: Active
Power - Output: 3kW
Contents: Board(s)
Produkt ist nicht verfügbar
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EVAL600W12VLLCP7TOBO1 Infineon-ApplicationNote_EvaluationBoard_EVAL_600W_12V_LLC_P7-AN-v01_00-EN.pdf?fileId=5546d4625b10283a015b1e4f218b0035
EVAL600W12VLLCP7TOBO1
Hersteller: Infineon Technologies
Description: EVAL BOARD ICE2HS01G ICE2QR2280Z
Packaging: Bulk
Voltage - Output: 12V
Voltage - Input: 350V ~ 410V
Current - Output: 50A
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: ICE2HS01G, ICE2QR2280Z
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1 Isolated Output
Part Status: Active
Power - Output: 600W
Contents: Board(s)
Produkt ist nicht verfügbar
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EVAL800WPFCP7TOBO1 Infineon-ApplicationNote_EvaluationBoard_EVAL_800W_PFC_P7-AN-v01_00-EN.pdf?fileId=5546d4625b10283a015b141c54790da7
EVAL800WPFCP7TOBO1
Hersteller: Infineon Technologies
Description: EVAL BRD ICE2QR2280Z ICE3PCS01G
Packaging: Bulk
Function: Power Factor Correction
Type: Power Management
Utilized IC / Part: ICE2QR2280Z, ICE3PCS01G
Supplied Contents: Board(s)
Part Status: Active
Contents: Board(s)
Produkt ist nicht verfügbar
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IRF250P225 IR_PartNumberingSystem.pdf
IRF250P225
Hersteller: Infineon Technologies
Description: MOSFET N-CH 250V 69A TO247AC
Rds On (Max) @ Id, Vgs: 22mOhm @ 41A, 10V
Current - Continuous Drain (Id) @ 25°C: 69A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 4897 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247AC
Vgs(th) (Max) @ Id: 4V @ 270µA
Power Dissipation (Max): 313W (Tc)
Produkt ist nicht verfügbar
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IRF250P224 Infineon-IRF250P224-DS-v01_00-EN.pdf?fileId=5546d4625a888733015a8bb640137c6e
IRF250P224
Hersteller: Infineon Technologies
Description: MOSFET N-CH 250V 96A TO247AC
Input Capacitance (Ciss) (Max) @ Vds: 9915 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 203 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247AC
Vgs(th) (Max) @ Id: 4V @ 270µA
Power Dissipation (Max): 313W (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 58A, 10V
Current - Continuous Drain (Id) @ 25°C: 96A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Produkt ist nicht verfügbar
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DZ435N40KHPSA1 Infineon-DZ435N-DS-v03_02-EN.pdf?fileId=db3a3043243b5f170124e2ccd4426304
DZ435N40KHPSA1
Hersteller: Infineon Technologies
Description: DIODE GEN PURP 4KV 700A MODULE
Packaging: Tray
Current - Reverse Leakage @ Vr: 50 mA @ 4000 V
Voltage - Forward (Vf) (Max) @ If: 1.71 V @ 1200 A
Voltage - DC Reverse (Vr) (Max): 4000 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: Module
Current - Average Rectified (Io): 700A
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: Module
auf Bestellung 4 Stücke:
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AnzahlPrivatkunde
1+518.36 EUR
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IKW15T120FKSA1 fundamentals-of-power-semiconductors
IKW15T120FKSA1
Hersteller: Infineon Technologies
Description: IGBT NPT FS 1200V 30A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 140 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 15A
Supplier Device Package: PG-TO247-3-1
IGBT Type: NPT, Trench Field Stop
Td (on/off) @ 25°C: 50ns/520ns
Switching Energy: 2.7mJ
Test Condition: 600V, 15A, 56Ohm, 15V
Gate Charge: 85 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 110 W
Produkt ist nicht verfügbar
Mindestbestellmenge: 240 Stücke
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CY9BF122LQN-G-AVE2 Infineon-CY9B120M_Series_32_Bit_Arm_Cortex_M3_FM3_Microcontroller-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0edfa79064e9&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY9BF122LQN-G-AVE2
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 160KB FLASH 64QFN
Packaging: Tray
Package / Case: 64-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 72MHz
Program Memory Size: 160KB (160K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 23x12b; D/A 2x10b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 64-QFN (9x9)
Part Status: Active
Number of I/O: 50
DigiKey Programmable: Not Verified
auf Bestellung 2600 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+16.95 EUR
10+13.19 EUR
25+12.23 EUR
100+11.21 EUR
260+10.7 EUR
520+10.4 EUR
1040+10.16 EUR
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CY9BF124KQN-G-AVE2 Infineon-CY9B120M_Series_32_Bit_Arm_Cortex_M3_FM3_Microcontroller-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0edfa79064e9&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY9BF124KQN-G-AVE2
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 288KB FLASH 48QFN
DigiKey Programmable: Not Verified
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 32K x 8
Program Memory Size: 288KB (288K x 8)
Speed: 72MHz
Mounting Type: Surface Mount
Package / Case: 48-VFQFN Exposed Pad
Packaging: Tray
Number of I/O: 35
Part Status: Active
Supplier Device Package: 48-QFN (7x7)
Peripherals: DMA, LVD, POR, PWM, WDT
Connectivity: CSIO, I2C, LINbus, UART/USART
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit Single-Core
Data Converters: A/D 14x12b; D/A 2x10b
Core Processor: ARM® Cortex®-M3
Produkt ist nicht verfügbar
Mindestbestellmenge: 2600 Stücke
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CY9BF122MPMC1-G-JNE2 Infineon-CY9B120M_Series_32_Bit_Arm_Cortex_M3_FM3_Microcontroller-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0edfa79064e9&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY9BF122MPMC1-G-JNE2
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 160KB FLASH 80LQFP
Number of I/O: 65
Part Status: Active
Supplier Device Package: 80-LQFP (14x14)
Peripherals: DMA, LVD, POR, PWM, WDT
Connectivity: CSIO, I2C, LINbus, UART/USART
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit Single-Core
Data Converters: A/D 26x12b; D/A 2x10b
Core Processor: ARM® Cortex®-M3
DigiKey Programmable: Not Verified
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 16K x 8
Program Memory Size: 160KB (160K x 8)
Speed: 72MHz
Mounting Type: Surface Mount
Package / Case: 80-LQFP
Packaging: Tray
Produkt ist nicht verfügbar
Mindestbestellmenge: 900 Stücke
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FZ750R65KE3NOSA1 Infineon-FZ750R65KE3-DS-v03_01-EN.pdf?fileId=db3a304325afd6e00126461fd3936974
FZ750R65KE3NOSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 6500V 750A A-IHV190-6
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -50°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 750A
NTC Thermistor: No
Supplier Device Package: Module
Part Status: Active
Current - Collector (Ic) (Max): 750 A
Voltage - Collector Emitter Breakdown (Max): 6500 V
Power - Max: 14500 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 205 nF @ 25 V
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+5226.08 EUR
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IPW60R099C6FKSA1 IPB60R099C6_2_1.pdf?folderId=db3a3043163797a6011638933eda014b&fileId=db3a30432313ff5e012394d25bd3069e
IPW60R099C6FKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 37.9A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37.9A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 18.1A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1.21mA
Supplier Device Package: PG-TO247-3-1
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 119 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2660 pF @ 100 V
auf Bestellung 445 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+14.6 EUR
30+8.43 EUR
120+7.07 EUR
Mindestbestellmenge: 2 Stücke
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