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BG 3230 E6327 BG 3230 E6327 Infineon Technologies BG3230,%20BG3230R.pdf Description: MOSFET N-CH DUAL 8V SOT-363
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FM28V100-TGTR FM28V100-TGTR Infineon Technologies Infineon-FM28V100_1_MBIT_(128K_X_8)_F-RAM_MEMORY-DataSheet-v08_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec8921d410d&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC FRAM 1MBIT PARALLEL 32TSOP I
Packaging: Tape & Reel (TR)
Package / Case: 32-TFSOP (0.465", 11.80mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 3.6V
Technology: FRAM (Ferroelectric RAM)
Memory Format: FRAM
Supplier Device Package: 32-TSOP I
Part Status: Active
Write Cycle Time - Word, Page: 90ns
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
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FM28V100-TGTR FM28V100-TGTR Infineon Technologies Infineon-FM28V100_1_MBIT_(128K_X_8)_F-RAM_MEMORY-DataSheet-v08_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec8921d410d&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC FRAM 1MBIT PARALLEL 32TSOP I
Packaging: Cut Tape (CT)
Package / Case: 32-TFSOP (0.465", 11.80mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 3.6V
Technology: FRAM (Ferroelectric RAM)
Memory Format: FRAM
Supplier Device Package: 32-TSOP I
Part Status: Active
Write Cycle Time - Word, Page: 90ns
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
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FM28V100-TG FM28V100-TG Infineon Technologies Infineon-FM28V100_1_MBIT_(128K_X_8)_F-RAM_MEMORY-DataSheet-v08_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec8921d410d&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC FRAM 1MBIT PARALLEL 32TSOP I
Packaging: Tray
Package / Case: 32-TFSOP (0.465", 11.80mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 3.6V
Technology: FRAM (Ferroelectric RAM)
Memory Format: FRAM
Supplier Device Package: 32-TSOP I
Part Status: Active
Write Cycle Time - Word, Page: 90ns
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
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FM28V102A-TG FM28V102A-TG Infineon Technologies Infineon-FM28V102A_1-Mbit_(64_K_16)_F-RAM_Memory-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec8c591413e&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC FRAM 1MBIT PARALLEL 44TSOP II
Packaging: Tray
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 3.6V
Technology: FRAM (Ferroelectric RAM)
Memory Format: FRAM
Supplier Device Package: 44-TSOP II
Part Status: Active
Write Cycle Time - Word, Page: 90ns
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 64K x 16
DigiKey Programmable: Not Verified
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FM28V020-T28GTR FM28V020-T28GTR Infineon Technologies Infineon-FM28V020_256_KBIT_(32K_X_8)_F-RAM_MEMORY-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec8aa524123&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC FRAM 256KBIT PAR 28TSOP I
Packaging: Tape & Reel (TR)
Package / Case: 28-TSSOP (0.465", 11.80mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 3.6V
Technology: FRAM (Ferroelectric RAM)
Memory Format: FRAM
Supplier Device Package: 28-TSOP I
Write Cycle Time - Word, Page: 140ns
Memory Interface: Parallel
Access Time: 140 ns
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
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CY7C1019D-10VXI CY7C1019D-10VXI Infineon Technologies Infineon-CY7C1019D_1-Mbit_(128_K_8)_Static_RAM-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebf2577333a&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC SRAM 1MBIT PARALLEL 32SOJ
Packaging: Tube
Package / Case: 32-BSOJ (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-SOJ
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
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CY7C1019DV33-10VXI CY7C1019DV33-10VXI Infineon Technologies download description Description: IC SRAM 1MBIT PARALLEL 32SOJ
Packaging: Tube
Package / Case: 32-BSOJ (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-SOJ
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
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S29GL512S11TFIV10 S29GL512S11TFIV10 Infineon Technologies Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai Description: IC FLASH 512MBIT PARALLEL 56TSOP
Packaging: Bulk
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Part Status: Active
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 32M x 16
DigiKey Programmable: Not Verified
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CY91F523JSEPMC-GTE1 Infineon Technologies Description: IC MCU 32BIT 448KB FLASH 120LQFP
Packaging: Tray
Package / Case: 120-LQFP
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 448KB (448K x 8)
RAM Size: 56K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: FR81S
Data Converters: A/D 42x12b SAR; D/A 2x8b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, I²C, LINbus, SPI, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 120-LQFP (16x16)
Number of I/O: 96
DigiKey Programmable: Not Verified
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IRLR2705TRPBF IRLR2705TRPBF Infineon Technologies irlr2705pbf.pdf?fileId=5546d462533600a40153566cb38f2673 Description: MOSFET N-CH 55V 28A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 17A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 25 V
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IRLR2705TRPBF IRLR2705TRPBF Infineon Technologies irlr2705pbf.pdf?fileId=5546d462533600a40153566cb38f2673 Description: MOSFET N-CH 55V 28A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 17A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 25 V
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CY8C29666-24LTXI CY8C29666-24LTXI Infineon Technologies Infineon-CY8C29466_CY8C29566_CY8C29666_CY8C29866_PSoC_Programmable_System-on-Chip-DataSheet-v31_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec690c03ce1&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integra Description: IC MCU 8BIT 32KB FLASH 48QFN
Packaging: Tray
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Data Converters: A/D 12x14b; D/A 4x9b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.25V
Connectivity: I2C, SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 48-QFN (7x7)
Part Status: Active
Number of I/O: 44
DigiKey Programmable: Not Verified
auf Bestellung 900 Stücke:
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BSP76E6327HUSA1 BSP76E6327HUSA1 Infineon Technologies Infineon-BSP76-DS-v01_03-en.pdf?folderId=db3a3043163797a6011667aa084c0e01&fileId=db3a3043271faefd01274d00e2695d45&ack=t Description: IC PWR DRVR N-CHAN 1:1 SOT223-4
Packaging: Tape & Reel (TR)
Features: Auto Restart
Package / Case: TO-261-4, TO-261AA
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 150mOhm
Input Type: Non-Inverting
Voltage - Load: 42V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.4A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-SOT223-4
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Obsolete
Produkt ist nicht verfügbar
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CY8CMBR3116-LQXIT CY8CMBR3116-LQXIT Infineon Technologies Infineon-CY8CMBR3002_CY8CMBR3102_CY8CMBR3106S_CY8CMBR3108_CY8CMBR3110_CY8CMBR3116-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe3508318e Description: IC CAP SENSE 24QFN
Packaging: Tape & Reel (TR)
Package / Case: 24-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C
Type: Buttons
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V ~ 5.5V
Current - Supply: 140mA
Number of Inputs: Up to 16
Supplier Device Package: 24-QFN (4x4)
Proximity Detection: Yes
LED Driver Channels: Up to 8
Part Status: Active
DigiKey Programmable: Not Verified
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CY8CMBR3116-LQXIT CY8CMBR3116-LQXIT Infineon Technologies Infineon-CY8CMBR3002_CY8CMBR3102_CY8CMBR3106S_CY8CMBR3108_CY8CMBR3110_CY8CMBR3116-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe3508318e Description: IC CAP SENSE 24QFN
Packaging: Cut Tape (CT)
Package / Case: 24-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C
Type: Buttons
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V ~ 5.5V
Current - Supply: 140mA
Number of Inputs: Up to 16
Supplier Device Package: 24-QFN (4x4)
Proximity Detection: Yes
LED Driver Channels: Up to 8
Part Status: Active
DigiKey Programmable: Not Verified
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MB95F013KPMC-G-SNE2 MB95F013KPMC-G-SNE2 Infineon Technologies 5047 Description: IC MCU 32LQFP
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IAUC100N10S5L040ATMA1 IAUC100N10S5L040ATMA1 Infineon Technologies Infineon-IAUC100N10S5L040-DS-v01_00-EN.pdf?fileId=5546d462694c98b401696d0485683542 Description: MOSFET N-CH 100V 100A 8TDSON-34
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 50A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 2V @ 90µA
Supplier Device Package: PG-TDSON-8-34
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 50 V
Qualification: AEC-Q101
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IAUC100N10S5L040ATMA1 IAUC100N10S5L040ATMA1 Infineon Technologies Infineon-IAUC100N10S5L040-DS-v01_00-EN.pdf?fileId=5546d462694c98b401696d0485683542 Description: MOSFET N-CH 100V 100A 8TDSON-34
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 50A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 2V @ 90µA
Supplier Device Package: PG-TDSON-8-34
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 50 V
Qualification: AEC-Q101
auf Bestellung 2554 Stücke:
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IPB80N06S2LH5ATMA3 Infineon Technologies Description: MOSFET
Produkt ist nicht verfügbar
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BGS 12AL7-6 E6433 BGS 12AL7-6 E6433 Infineon Technologies BGS12AL7-6.pdf?folderId=db3a304314dca3890115176d140c0ca3&fileId=db3a30431d8a6b3c011dbf68acde2884 Description: IC RF SWITCH SPDT 3GHZ TSLP7-6
Features: DC Blocked, Single Line Control
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN Exposed Pad
Impedance: 50Ohm
Mounting Type: Surface Mount
Circuit: SPDT
RF Type: General Purpose
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 2.4V ~ 3.6V
Insertion Loss: 0.5dB
Frequency Range: 30MHz ~ 3GHz
Topology: Reflective
Test Frequency: 2GHz
Isolation: 25dB
Supplier Device Package: PG-TSLP-7-6
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BGS12AL76E6327XTMA1 BGS12AL76E6327XTMA1 Infineon Technologies BGS12AL7-6.pdf Description: IC RF SWITCH SPDT 3GHZ TSLP7-6
Packaging: Tape & Reel (TR)
Features: DC Blocked, Single Line Control
Package / Case: 6-XFDFN Exposed Pad
Impedance: 50Ohm
Mounting Type: Surface Mount
Circuit: SPDT
RF Type: General Purpose
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 2.4V ~ 3.6V
Insertion Loss: 0.5dB
Frequency Range: 30MHz ~ 3GHz
Topology: Reflective
Test Frequency: 2GHz
Isolation: 25dB
Supplier Device Package: PG-TSLP-7-6
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BGS12AL76E6327XTMA1 BGS12AL76E6327XTMA1 Infineon Technologies BGS12AL7-6.pdf Description: IC RF SWITCH SPDT 3GHZ TSLP7-6
Packaging: Cut Tape (CT)
Features: DC Blocked, Single Line Control
Package / Case: 6-XFDFN Exposed Pad
Impedance: 50Ohm
Mounting Type: Surface Mount
Circuit: SPDT
RF Type: General Purpose
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 2.4V ~ 3.6V
Insertion Loss: 0.5dB
Frequency Range: 30MHz ~ 3GHz
Topology: Reflective
Test Frequency: 2GHz
Isolation: 25dB
Supplier Device Package: PG-TSLP-7-6
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BGS 12A TR E6327 BGS 12A TR E6327 Infineon Technologies fundamentals-of-power-semiconductors Description: IC RF SWITCH SPDT 3GHZ FWLP-6
Packaging: Tape & Reel (TR)
Features: DC Blocked, Single Line Control
Package / Case: 6-XFBGA, WLCSP
Impedance: 50Ohm
Circuit: SPDT
RF Type: General Purpose
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 2.4V ~ 3.6V
Insertion Loss: 0.6dB
Frequency Range: 100MHz ~ 3GHz
Topology: Reflective
Test Frequency: 2GHz
Isolation: 27dB
Supplier Device Package: FWLP-6
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BGS12AL74E6327XTSA1 BGS12AL74E6327XTSA1 Infineon Technologies BGS12AL7-4.pdf Description: IC RF SWITCH SPDT 3GHZ TSLP7-4
Packaging: Tape & Reel (TR)
Features: DC Blocked, Single Line Control
Package / Case: 6-XFDFN Exposed Pad
Impedance: 50Ohm
Circuit: SPDT
RF Type: General Purpose
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 2.4V ~ 3.6V
Insertion Loss: 0.5dB
Frequency Range: 30MHz ~ 3GHz
Topology: Reflective
Test Frequency: 2GHz
Isolation: 25dB
Supplier Device Package: TSLP-7-4
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BGS12AL74E6327XTSA1 BGS12AL74E6327XTSA1 Infineon Technologies BGS12AL7-4.pdf Description: IC RF SWITCH SPDT 3GHZ TSLP7-4
Packaging: Cut Tape (CT)
Features: DC Blocked, Single Line Control
Package / Case: 6-XFDFN Exposed Pad
Impedance: 50Ohm
Circuit: SPDT
RF Type: General Purpose
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 2.4V ~ 3.6V
Insertion Loss: 0.5dB
Frequency Range: 30MHz ~ 3GHz
Topology: Reflective
Test Frequency: 2GHz
Isolation: 25dB
Supplier Device Package: TSLP-7-4
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CY8C624ALQI-S2D42 CY8C624ALQI-S2D42 Infineon Technologies Infineon-PSOC_6_MCU_CY8C62X8_CY8C62XA-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee7d03a70b1 Description: IC MCU 32BIT 2MB FLASH 68QFN
Packaging: Tray
Package / Case: 68-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 100MHz, 150MHz
Program Memory Size: 2MB (2M x 8)
RAM Size: 1M x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
Data Converters: A/D 16x10b SAR, 16x12b Sigma-Delta; D/A 2x7/8b
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
Connectivity: eMMC/SD/SDIO, FIFO, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART, USB
Peripherals: Brown-out Detect/Reset, CapSense, Crypto - AES, I2S, DMA, LCD, LVD, POR, PWM, RSA, SHA, Temp Sensor, TRNG, WDT
Supplier Device Package: 68-QFN (8x8)
Part Status: Active
Number of I/O: 53
DigiKey Programmable: Not Verified
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NAC1080XTMA2 NAC1080XTMA2 Infineon Technologies Infineon-NAC1080-DataSheet-v01_01-EN.pdf?fileId=8ac78c8c7d718a49017db42a43930b11 Description: CONTACTLESS POWER&SENSOR
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Interface: I2C, SPI, UART
Type: RFID Reader/Transponder
Standards: ISO 14443A
Supplier Device Package: PG-DSO-16-45
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NAC1080XTMA2 NAC1080XTMA2 Infineon Technologies Infineon-NAC1080-DataSheet-v01_01-EN.pdf?fileId=8ac78c8c7d718a49017db42a43930b11 Description: CONTACTLESS POWER&SENSOR
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Interface: I2C, SPI, UART
Type: RFID Reader/Transponder
Standards: ISO 14443A
Supplier Device Package: PG-DSO-16-45
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DEVKITNAC1080TOBO1 DEVKITNAC1080TOBO1 Infineon Technologies Infineon-NFC_actuation_sensing_IC_NAC1080_development_kit-UserManual-v01_00-EN.pdf?fileId=8ac78c8c818eceac0181a491934d4c3d Description: DEV KIT
Packaging: Bulk
For Use With/Related Products: NAC1080
Frequency: 13.56MHz
Type: Near Field Communication (NFC)
Supplied Contents: Board(s)
Part Status: Active
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IRF3007STRLPBF IRF3007STRLPBF Infineon Technologies irf3007spbf.pdf Description: MOSFET N CH 75V 62A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
Rds On (Max) @ Id, Vgs: 12.6mOhm @ 48A, 10V
Power Dissipation (Max): 120W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3270 pF @ 25 V
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IRF3007STRLPBF IRF3007STRLPBF Infineon Technologies irf3007spbf.pdf Description: MOSFET N CH 75V 62A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
Rds On (Max) @ Id, Vgs: 12.6mOhm @ 48A, 10V
Power Dissipation (Max): 120W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3270 pF @ 25 V
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CY9AF141MBBGL-GK9E1 CY9AF141MBBGL-GK9E1 Infineon Technologies Infineon-CY9A140NB_Series_32_Bit_Arm_Cortex_M3_FM3_Microcontroller-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee002d66576 Description: IC MCU 32BIT 64KB FLASH 96FBGA
Packaging: Tray
Package / Case: 96-LFBGA
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 17x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
Connectivity: CSIO, EBI/EMI, I2C, SPI, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 96-FBGA (6x6)
Number of I/O: 66
DigiKey Programmable: Not Verified
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CY9AF142LAQN-G-AVE2 CY9AF142LAQN-G-AVE2 Infineon Technologies Description: IC MCU 32BIT 160KB FLASH 64QFN
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CY9AF141MBPMC1-G-JNE2 CY9AF141MBPMC1-G-JNE2 Infineon Technologies Infineon-CY9A140NB_Series_32_Bit_Arm_Cortex_M3_FM3_Microcontroller-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee002d66576&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC MCU 32BIT 64KB FLASH 80LQFP
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CY9AF141MABGL-GK9E1 CY9AF141MABGL-GK9E1 Infineon Technologies Description: IC MCU 32BIT 96KB FLASH 96FBGA
Packaging: Tray
Package / Case: 96-LFBGA
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 96KB (96K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 17x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
Connectivity: CSIO, EBI/EMI, I2C, SPI, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 96-FBGA (6x6)
Number of I/O: 66
DigiKey Programmable: Not Verified
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CY9AF141NABGL-GK9E1 Infineon Technologies Description: MM MCU
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CY9AF141NBBGL-GK9E1 CY9AF141NBBGL-GK9E1 Infineon Technologies Description: IC MCU 32BIT 64KB FLASH 112BGA
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FF600R17KE3B2S1NOSA1 Infineon Technologies i.MX 6 Ultra Light.pdf Description: FF600R17 - INSULATED GATE BIPOLA
Packaging: Bulk
Part Status: Active
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FF600R12IE4VBOSA1 Infineon Technologies Infineon-FF600R12IE4V-DS-v02_00-en_de.pdf?fileId=5546d46145f1f3a40145f52ca8cd031e Description: PP, IHM I, XHP 1,7KV
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 600A
NTC Thermistor: Yes
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 600 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 3.35 kW
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 37000 pF @ 25 V
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FF600R12IE4PNOSA1 Infineon Technologies Description: IGBT MOD 1200V 600A 3350W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 600A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 600 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 3350 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 37 nF @ 25 V
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FF600R12KE3NOSA1 Infineon Technologies FF600R12KE3_Rev2.0_2002-07-30.pdf Description: IGBT MODULE 1200V 600A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 600A
NTC Thermistor: No
Supplier Device Package: Module
Current - Collector (Ic) (Max): 850 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 2800 W
Current - Collector Cutoff (Max): 5 mA
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FF600R12IP4VBOSA1 FF600R12IP4VBOSA1 Infineon Technologies Infineon-FF600R12IP4V-DS-v02_00-en_de.pdf?fileId=5546d46145f1f3a40145f5704bb30790 Description: IGBT MOD 1200V 600A 3350W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 600A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 600 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 3350 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 37 nF @ 25 V
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CY8C3666AXI-052 CY8C3666AXI-052 Infineon Technologies #!?fileId=8ac78c8c7d0d8da4017d0ec73d263e88 Description: IC MCU 8BIT 64KB FLASH 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 67MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 2K x 8
Core Processor: 8051
Data Converters: A/D 16x12b; D/A 4x8b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: EBI/EMI, I2C, LINbus, SPI, UART/USART
Peripherals: CapSense, DMA, POR, PWM, WDT
Supplier Device Package: 100-TQFP (14x14)
Part Status: Active
Number of I/O: 62
DigiKey Programmable: Not Verified
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CY8C3665AXI-198 CY8C3665AXI-198 Infineon Technologies #!?fileId=8ac78c8c7d0d8da4017d0ec73d263e88 Description: IC MCU 8BIT 32KB FLASH 100TQFP
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CY8C3665PVI-008 CY8C3665PVI-008 Infineon Technologies #!?fileId=8ac78c8c7d0d8da4017d0ec73d263e88 Description: IC MCU 8BIT 32KB FLASH 48SSOP
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CY8C3665PVI-008 CY8C3665PVI-008 Infineon Technologies #!?fileId=8ac78c8c7d0d8da4017d0ec73d263e88 Description: IC MCU 8BIT 32KB FLASH 48SSOP
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CY8C3665LTI-199 CY8C3665LTI-199 Infineon Technologies #!?fileId=8ac78c8c7d0d8da4017d0ec73d263e88 Description: IC MCU 8BIT 32KB FLASH 68QFN
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CY8C3666AXI-202 CY8C3666AXI-202 Infineon Technologies #!?fileId=8ac78c8c7d0d8da4017d0ec73d263e88 Description: IC MCU 8BIT 64KB FLASH 100TQFP
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CY8C3665PVI-080 CY8C3665PVI-080 Infineon Technologies CY8C36_RevJ.pdf Description: IC MCU 8BIT 32KB FLASH 48SSOP
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CY8C3646AXE-178 CY8C3646AXE-178 Infineon Technologies Description: IC MCU 8BIT 64KB FLASH 100TQFP
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S6AE103A0DGN1B200 S6AE103A0DGN1B200 Infineon Technologies Description: IC PMIC ENERGY HARVESTING 24QFN
Packaging: Tape & Reel (TR)
Package / Case: 24-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 5.5V
Applications: Energy Harvesting
Supplier Device Package: 24-QFN (4x4)
Part Status: Obsolete
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S6AE103A0DGN1B200 S6AE103A0DGN1B200 Infineon Technologies Description: IC PMIC ENERGY HARVESTING 24QFN
Packaging: Cut Tape (CT)
Package / Case: 24-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 5.5V
Applications: Energy Harvesting
Supplier Device Package: 24-QFN (4x4)
Part Status: Obsolete
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CY15V108QN-50BKXI CY15V108QN-50BKXI Infineon Technologies Infineon-CY15B108QN_CY15V108QN_8Mb_EXCELON_TM_LP_Ferroelectric_RAM_F-RAM-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c80f4d329018138198d3408be Description: IC FRAM 8MBIT SPI 50MHZ 24FBGA
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IPTC039N15NM5ATMA1 IPTC039N15NM5ATMA1 Infineon Technologies Infineon-IPTC039N15NM5-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c81ae03fc0181d8d199be3f66 Description: OPTIMOS 5 POWER MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 190A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 319W (Tc)
Vgs(th) (Max) @ Id: 4.6V @ 243µA
Supplier Device Package: PG-HDSOP-16-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7300 pF @ 75 V
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IPTC039N15NM5ATMA1 IPTC039N15NM5ATMA1 Infineon Technologies Infineon-IPTC039N15NM5-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c81ae03fc0181d8d199be3f66 Description: OPTIMOS 5 POWER MOSFET
Packaging: Cut Tape (CT)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 190A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 319W (Tc)
Vgs(th) (Max) @ Id: 4.6V @ 243µA
Supplier Device Package: PG-HDSOP-16-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7300 pF @ 75 V
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IRF8915TRPBF IRF8915TRPBF Infineon Technologies irf8915pbf.pdf?fileId=5546d462533600a401535610fd2d1d91 Description: MOSFET 2N-CH 20V 8.9A 8SO
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 8.9A
Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 10V
Rds On (Max) @ Id, Vgs: 18.3mOhm @ 8.9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 7.4nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SO
Part Status: Obsolete
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D901S45T D901S45T Infineon Technologies D901S35%E2%80%A645T.pdf Description: DIODE GEN PURP 4.5KV 1225A
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IKW50N120CH7XKSA1 IKW50N120CH7XKSA1 Infineon Technologies Infineon-IKW50N120CH7-DataSheet-v01_10-EN.pdf?fileId=8ac78c8c84a33f400184e2a1715c2da0 Description: IGBT TRENCH FS 1200V 86A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 116 ns
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 50A
Supplier Device Package: PG-TO247-3-U06
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 39ns/319ns
Switching Energy: 2.33mJ (on), 1.12mJ (off)
Gate Charge: 375 nC
Part Status: Active
Current - Collector (Ic) (Max): 86 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 398 W
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120+7.60 EUR
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CY62137FV30LL-45BVXIT CY62137FV30LL-45BVXIT Infineon Technologies Infineon-CY62137FV30_MoBL_2-Mbit_(128_K_16)_Static_RAM-DataSheet-v17_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe9762324f Description: IC SRAM 2MBIT PARALLEL 48VFBGA
Packaging: Tape & Reel (TR)
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 2Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-VFBGA (6x8)
Part Status: Active
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 128K x 16
DigiKey Programmable: Not Verified
auf Bestellung 2000 Stücke:
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2000+4.67 EUR
Mindestbestellmenge: 2000
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BG 3230 E6327 BG3230,%20BG3230R.pdf
BG 3230 E6327
Hersteller: Infineon Technologies
Description: MOSFET N-CH DUAL 8V SOT-363
Produkt ist nicht verfügbar
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FM28V100-TGTR Infineon-FM28V100_1_MBIT_(128K_X_8)_F-RAM_MEMORY-DataSheet-v08_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec8921d410d&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
FM28V100-TGTR
Hersteller: Infineon Technologies
Description: IC FRAM 1MBIT PARALLEL 32TSOP I
Packaging: Tape & Reel (TR)
Package / Case: 32-TFSOP (0.465", 11.80mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 3.6V
Technology: FRAM (Ferroelectric RAM)
Memory Format: FRAM
Supplier Device Package: 32-TSOP I
Part Status: Active
Write Cycle Time - Word, Page: 90ns
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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FM28V100-TGTR Infineon-FM28V100_1_MBIT_(128K_X_8)_F-RAM_MEMORY-DataSheet-v08_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec8921d410d&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
FM28V100-TGTR
Hersteller: Infineon Technologies
Description: IC FRAM 1MBIT PARALLEL 32TSOP I
Packaging: Cut Tape (CT)
Package / Case: 32-TFSOP (0.465", 11.80mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 3.6V
Technology: FRAM (Ferroelectric RAM)
Memory Format: FRAM
Supplier Device Package: 32-TSOP I
Part Status: Active
Write Cycle Time - Word, Page: 90ns
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
auf Bestellung 637 Stücke:
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1+36.56 EUR
10+32.43 EUR
25+30.92 EUR
50+29.83 EUR
100+28.77 EUR
250+27.43 EUR
500+26.45 EUR
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FM28V100-TG Infineon-FM28V100_1_MBIT_(128K_X_8)_F-RAM_MEMORY-DataSheet-v08_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec8921d410d&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
FM28V100-TG
Hersteller: Infineon Technologies
Description: IC FRAM 1MBIT PARALLEL 32TSOP I
Packaging: Tray
Package / Case: 32-TFSOP (0.465", 11.80mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 3.6V
Technology: FRAM (Ferroelectric RAM)
Memory Format: FRAM
Supplier Device Package: 32-TSOP I
Part Status: Active
Write Cycle Time - Word, Page: 90ns
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
auf Bestellung 497 Stücke:
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Anzahl Preis
1+34.55 EUR
10+32.00 EUR
25+30.99 EUR
50+30.23 EUR
234+28.57 EUR
468+27.84 EUR
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FM28V102A-TG Infineon-FM28V102A_1-Mbit_(64_K_16)_F-RAM_Memory-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec8c591413e&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
FM28V102A-TG
Hersteller: Infineon Technologies
Description: IC FRAM 1MBIT PARALLEL 44TSOP II
Packaging: Tray
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 3.6V
Technology: FRAM (Ferroelectric RAM)
Memory Format: FRAM
Supplier Device Package: 44-TSOP II
Part Status: Active
Write Cycle Time - Word, Page: 90ns
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 64K x 16
DigiKey Programmable: Not Verified
auf Bestellung 19 Stücke:
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Anzahl Preis
1+31.93 EUR
10+28.33 EUR
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FM28V020-T28GTR Infineon-FM28V020_256_KBIT_(32K_X_8)_F-RAM_MEMORY-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec8aa524123&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
FM28V020-T28GTR
Hersteller: Infineon Technologies
Description: IC FRAM 256KBIT PAR 28TSOP I
Packaging: Tape & Reel (TR)
Package / Case: 28-TSSOP (0.465", 11.80mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 3.6V
Technology: FRAM (Ferroelectric RAM)
Memory Format: FRAM
Supplier Device Package: 28-TSOP I
Write Cycle Time - Word, Page: 140ns
Memory Interface: Parallel
Access Time: 140 ns
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY7C1019D-10VXI Infineon-CY7C1019D_1-Mbit_(128_K_8)_Static_RAM-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebf2577333a&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY7C1019D-10VXI
Hersteller: Infineon Technologies
Description: IC SRAM 1MBIT PARALLEL 32SOJ
Packaging: Tube
Package / Case: 32-BSOJ (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-SOJ
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY7C1019DV33-10VXI description download
CY7C1019DV33-10VXI
Hersteller: Infineon Technologies
Description: IC SRAM 1MBIT PARALLEL 32SOJ
Packaging: Tube
Package / Case: 32-BSOJ (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-SOJ
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
auf Bestellung 342 Stücke:
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Anzahl Preis
3+7.16 EUR
23+6.48 EUR
46+6.33 EUR
69+6.25 EUR
115+6.14 EUR
253+5.97 EUR
Mindestbestellmenge: 3
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S29GL512S11TFIV10 Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai
S29GL512S11TFIV10
Hersteller: Infineon Technologies
Description: IC FLASH 512MBIT PARALLEL 56TSOP
Packaging: Bulk
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Part Status: Active
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 32M x 16
DigiKey Programmable: Not Verified
auf Bestellung 330 Stücke:
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Anzahl Preis
41+12.37 EUR
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CY91F523JSEPMC-GTE1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 448KB FLASH 120LQFP
Packaging: Tray
Package / Case: 120-LQFP
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 448KB (448K x 8)
RAM Size: 56K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: FR81S
Data Converters: A/D 42x12b SAR; D/A 2x8b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, I²C, LINbus, SPI, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 120-LQFP (16x16)
Number of I/O: 96
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IRLR2705TRPBF irlr2705pbf.pdf?fileId=5546d462533600a40153566cb38f2673
IRLR2705TRPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 28A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 17A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 25 V
auf Bestellung 18000 Stücke:
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Anzahl Preis
2000+0.44 EUR
4000+0.41 EUR
6000+0.40 EUR
10000+0.36 EUR
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IRLR2705TRPBF irlr2705pbf.pdf?fileId=5546d462533600a40153566cb38f2673
IRLR2705TRPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 28A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 17A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 25 V
auf Bestellung 19733 Stücke:
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Anzahl Preis
13+1.37 EUR
18+1.00 EUR
100+0.68 EUR
500+0.54 EUR
1000+0.49 EUR
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CY8C29666-24LTXI Infineon-CY8C29466_CY8C29566_CY8C29666_CY8C29866_PSoC_Programmable_System-on-Chip-DataSheet-v31_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec690c03ce1&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integra
CY8C29666-24LTXI
Hersteller: Infineon Technologies
Description: IC MCU 8BIT 32KB FLASH 48QFN
Packaging: Tray
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Data Converters: A/D 12x14b; D/A 4x9b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.25V
Connectivity: I2C, SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 48-QFN (7x7)
Part Status: Active
Number of I/O: 44
DigiKey Programmable: Not Verified
auf Bestellung 900 Stücke:
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Anzahl Preis
1+22.32 EUR
10+17.70 EUR
25+16.55 EUR
100+16.17 EUR
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BSP76E6327HUSA1 Infineon-BSP76-DS-v01_03-en.pdf?folderId=db3a3043163797a6011667aa084c0e01&fileId=db3a3043271faefd01274d00e2695d45&ack=t
BSP76E6327HUSA1
Hersteller: Infineon Technologies
Description: IC PWR DRVR N-CHAN 1:1 SOT223-4
Packaging: Tape & Reel (TR)
Features: Auto Restart
Package / Case: TO-261-4, TO-261AA
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 150mOhm
Input Type: Non-Inverting
Voltage - Load: 42V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.4A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-SOT223-4
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Obsolete
Produkt ist nicht verfügbar
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CY8CMBR3116-LQXIT Infineon-CY8CMBR3002_CY8CMBR3102_CY8CMBR3106S_CY8CMBR3108_CY8CMBR3110_CY8CMBR3116-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe3508318e
CY8CMBR3116-LQXIT
Hersteller: Infineon Technologies
Description: IC CAP SENSE 24QFN
Packaging: Tape & Reel (TR)
Package / Case: 24-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C
Type: Buttons
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V ~ 5.5V
Current - Supply: 140mA
Number of Inputs: Up to 16
Supplier Device Package: 24-QFN (4x4)
Proximity Detection: Yes
LED Driver Channels: Up to 8
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 2500 Stücke:
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Anzahl Preis
2500+2.48 EUR
Mindestbestellmenge: 2500
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CY8CMBR3116-LQXIT Infineon-CY8CMBR3002_CY8CMBR3102_CY8CMBR3106S_CY8CMBR3108_CY8CMBR3110_CY8CMBR3116-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe3508318e
CY8CMBR3116-LQXIT
Hersteller: Infineon Technologies
Description: IC CAP SENSE 24QFN
Packaging: Cut Tape (CT)
Package / Case: 24-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C
Type: Buttons
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V ~ 5.5V
Current - Supply: 140mA
Number of Inputs: Up to 16
Supplier Device Package: 24-QFN (4x4)
Proximity Detection: Yes
LED Driver Channels: Up to 8
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 2712 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.68 EUR
10+3.51 EUR
25+3.21 EUR
100+2.89 EUR
250+2.73 EUR
500+2.64 EUR
1000+2.56 EUR
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MB95F013KPMC-G-SNE2 5047
MB95F013KPMC-G-SNE2
Hersteller: Infineon Technologies
Description: IC MCU 32LQFP
Produkt ist nicht verfügbar
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IAUC100N10S5L040ATMA1 Infineon-IAUC100N10S5L040-DS-v01_00-EN.pdf?fileId=5546d462694c98b401696d0485683542
IAUC100N10S5L040ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 100A 8TDSON-34
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 50A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 2V @ 90µA
Supplier Device Package: PG-TDSON-8-34
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 50 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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IAUC100N10S5L040ATMA1 Infineon-IAUC100N10S5L040-DS-v01_00-EN.pdf?fileId=5546d462694c98b401696d0485683542
IAUC100N10S5L040ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 100A 8TDSON-34
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 50A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 2V @ 90µA
Supplier Device Package: PG-TDSON-8-34
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 50 V
Qualification: AEC-Q101
auf Bestellung 2554 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.30 EUR
10+3.44 EUR
100+2.39 EUR
500+1.94 EUR
1000+1.79 EUR
2000+1.71 EUR
Mindestbestellmenge: 4
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IPB80N06S2LH5ATMA3
Hersteller: Infineon Technologies
Description: MOSFET
Produkt ist nicht verfügbar
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BGS 12AL7-6 E6433 BGS12AL7-6.pdf?folderId=db3a304314dca3890115176d140c0ca3&fileId=db3a30431d8a6b3c011dbf68acde2884
BGS 12AL7-6 E6433
Hersteller: Infineon Technologies
Description: IC RF SWITCH SPDT 3GHZ TSLP7-6
Features: DC Blocked, Single Line Control
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN Exposed Pad
Impedance: 50Ohm
Mounting Type: Surface Mount
Circuit: SPDT
RF Type: General Purpose
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 2.4V ~ 3.6V
Insertion Loss: 0.5dB
Frequency Range: 30MHz ~ 3GHz
Topology: Reflective
Test Frequency: 2GHz
Isolation: 25dB
Supplier Device Package: PG-TSLP-7-6
Produkt ist nicht verfügbar
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BGS12AL76E6327XTMA1 BGS12AL7-6.pdf
BGS12AL76E6327XTMA1
Hersteller: Infineon Technologies
Description: IC RF SWITCH SPDT 3GHZ TSLP7-6
Packaging: Tape & Reel (TR)
Features: DC Blocked, Single Line Control
Package / Case: 6-XFDFN Exposed Pad
Impedance: 50Ohm
Mounting Type: Surface Mount
Circuit: SPDT
RF Type: General Purpose
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 2.4V ~ 3.6V
Insertion Loss: 0.5dB
Frequency Range: 30MHz ~ 3GHz
Topology: Reflective
Test Frequency: 2GHz
Isolation: 25dB
Supplier Device Package: PG-TSLP-7-6
Produkt ist nicht verfügbar
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BGS12AL76E6327XTMA1 BGS12AL7-6.pdf
BGS12AL76E6327XTMA1
Hersteller: Infineon Technologies
Description: IC RF SWITCH SPDT 3GHZ TSLP7-6
Packaging: Cut Tape (CT)
Features: DC Blocked, Single Line Control
Package / Case: 6-XFDFN Exposed Pad
Impedance: 50Ohm
Mounting Type: Surface Mount
Circuit: SPDT
RF Type: General Purpose
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 2.4V ~ 3.6V
Insertion Loss: 0.5dB
Frequency Range: 30MHz ~ 3GHz
Topology: Reflective
Test Frequency: 2GHz
Isolation: 25dB
Supplier Device Package: PG-TSLP-7-6
Produkt ist nicht verfügbar
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BGS 12A TR E6327 fundamentals-of-power-semiconductors
BGS 12A TR E6327
Hersteller: Infineon Technologies
Description: IC RF SWITCH SPDT 3GHZ FWLP-6
Packaging: Tape & Reel (TR)
Features: DC Blocked, Single Line Control
Package / Case: 6-XFBGA, WLCSP
Impedance: 50Ohm
Circuit: SPDT
RF Type: General Purpose
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 2.4V ~ 3.6V
Insertion Loss: 0.6dB
Frequency Range: 100MHz ~ 3GHz
Topology: Reflective
Test Frequency: 2GHz
Isolation: 27dB
Supplier Device Package: FWLP-6
Produkt ist nicht verfügbar
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BGS12AL74E6327XTSA1 BGS12AL7-4.pdf
BGS12AL74E6327XTSA1
Hersteller: Infineon Technologies
Description: IC RF SWITCH SPDT 3GHZ TSLP7-4
Packaging: Tape & Reel (TR)
Features: DC Blocked, Single Line Control
Package / Case: 6-XFDFN Exposed Pad
Impedance: 50Ohm
Circuit: SPDT
RF Type: General Purpose
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 2.4V ~ 3.6V
Insertion Loss: 0.5dB
Frequency Range: 30MHz ~ 3GHz
Topology: Reflective
Test Frequency: 2GHz
Isolation: 25dB
Supplier Device Package: TSLP-7-4
Produkt ist nicht verfügbar
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BGS12AL74E6327XTSA1 BGS12AL7-4.pdf
BGS12AL74E6327XTSA1
Hersteller: Infineon Technologies
Description: IC RF SWITCH SPDT 3GHZ TSLP7-4
Packaging: Cut Tape (CT)
Features: DC Blocked, Single Line Control
Package / Case: 6-XFDFN Exposed Pad
Impedance: 50Ohm
Circuit: SPDT
RF Type: General Purpose
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 2.4V ~ 3.6V
Insertion Loss: 0.5dB
Frequency Range: 30MHz ~ 3GHz
Topology: Reflective
Test Frequency: 2GHz
Isolation: 25dB
Supplier Device Package: TSLP-7-4
Produkt ist nicht verfügbar
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CY8C624ALQI-S2D42 Infineon-PSOC_6_MCU_CY8C62X8_CY8C62XA-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee7d03a70b1
CY8C624ALQI-S2D42
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 2MB FLASH 68QFN
Packaging: Tray
Package / Case: 68-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 100MHz, 150MHz
Program Memory Size: 2MB (2M x 8)
RAM Size: 1M x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
Data Converters: A/D 16x10b SAR, 16x12b Sigma-Delta; D/A 2x7/8b
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
Connectivity: eMMC/SD/SDIO, FIFO, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART, USB
Peripherals: Brown-out Detect/Reset, CapSense, Crypto - AES, I2S, DMA, LCD, LVD, POR, PWM, RSA, SHA, Temp Sensor, TRNG, WDT
Supplier Device Package: 68-QFN (8x8)
Part Status: Active
Number of I/O: 53
DigiKey Programmable: Not Verified
auf Bestellung 305 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+16.95 EUR
10+13.34 EUR
25+12.43 EUR
100+11.99 EUR
Mindestbestellmenge: 2
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NAC1080XTMA2 Infineon-NAC1080-DataSheet-v01_01-EN.pdf?fileId=8ac78c8c7d718a49017db42a43930b11
NAC1080XTMA2
Hersteller: Infineon Technologies
Description: CONTACTLESS POWER&SENSOR
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Interface: I2C, SPI, UART
Type: RFID Reader/Transponder
Standards: ISO 14443A
Supplier Device Package: PG-DSO-16-45
auf Bestellung 2500 Stücke:
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Anzahl Preis
2500+2.94 EUR
Mindestbestellmenge: 2500
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NAC1080XTMA2 Infineon-NAC1080-DataSheet-v01_01-EN.pdf?fileId=8ac78c8c7d718a49017db42a43930b11
NAC1080XTMA2
Hersteller: Infineon Technologies
Description: CONTACTLESS POWER&SENSOR
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Interface: I2C, SPI, UART
Type: RFID Reader/Transponder
Standards: ISO 14443A
Supplier Device Package: PG-DSO-16-45
auf Bestellung 4337 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.51 EUR
10+4.13 EUR
25+3.79 EUR
100+3.41 EUR
250+3.23 EUR
500+3.12 EUR
1000+3.04 EUR
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DEVKITNAC1080TOBO1 Infineon-NFC_actuation_sensing_IC_NAC1080_development_kit-UserManual-v01_00-EN.pdf?fileId=8ac78c8c818eceac0181a491934d4c3d
DEVKITNAC1080TOBO1
Hersteller: Infineon Technologies
Description: DEV KIT
Packaging: Bulk
For Use With/Related Products: NAC1080
Frequency: 13.56MHz
Type: Near Field Communication (NFC)
Supplied Contents: Board(s)
Part Status: Active
auf Bestellung 13 Stücke:
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Anzahl Preis
1+156.38 EUR
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IRF3007STRLPBF irf3007spbf.pdf
IRF3007STRLPBF
Hersteller: Infineon Technologies
Description: MOSFET N CH 75V 62A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
Rds On (Max) @ Id, Vgs: 12.6mOhm @ 48A, 10V
Power Dissipation (Max): 120W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3270 pF @ 25 V
auf Bestellung 2400 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
800+1.55 EUR
1600+1.52 EUR
2400+1.51 EUR
Mindestbestellmenge: 800
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IRF3007STRLPBF irf3007spbf.pdf
IRF3007STRLPBF
Hersteller: Infineon Technologies
Description: MOSFET N CH 75V 62A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
Rds On (Max) @ Id, Vgs: 12.6mOhm @ 48A, 10V
Power Dissipation (Max): 120W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3270 pF @ 25 V
auf Bestellung 3094 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+4.21 EUR
10+3.01 EUR
100+2.18 EUR
Mindestbestellmenge: 5
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CY9AF141MBBGL-GK9E1 Infineon-CY9A140NB_Series_32_Bit_Arm_Cortex_M3_FM3_Microcontroller-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee002d66576
CY9AF141MBBGL-GK9E1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 64KB FLASH 96FBGA
Packaging: Tray
Package / Case: 96-LFBGA
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 17x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
Connectivity: CSIO, EBI/EMI, I2C, SPI, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 96-FBGA (6x6)
Number of I/O: 66
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY9AF142LAQN-G-AVE2
CY9AF142LAQN-G-AVE2
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 160KB FLASH 64QFN
Produkt ist nicht verfügbar
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CY9AF141MBPMC1-G-JNE2 Infineon-CY9A140NB_Series_32_Bit_Arm_Cortex_M3_FM3_Microcontroller-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee002d66576&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY9AF141MBPMC1-G-JNE2
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 64KB FLASH 80LQFP
Produkt ist nicht verfügbar
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CY9AF141MABGL-GK9E1
CY9AF141MABGL-GK9E1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 96KB FLASH 96FBGA
Packaging: Tray
Package / Case: 96-LFBGA
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 96KB (96K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 17x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
Connectivity: CSIO, EBI/EMI, I2C, SPI, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 96-FBGA (6x6)
Number of I/O: 66
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY9AF141NABGL-GK9E1
Hersteller: Infineon Technologies
Description: MM MCU
Produkt ist nicht verfügbar
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CY9AF141NBBGL-GK9E1
CY9AF141NBBGL-GK9E1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 64KB FLASH 112BGA
Produkt ist nicht verfügbar
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FF600R17KE3B2S1NOSA1 i.MX 6 Ultra Light.pdf
Hersteller: Infineon Technologies
Description: FF600R17 - INSULATED GATE BIPOLA
Packaging: Bulk
Part Status: Active
auf Bestellung 116 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+1132.51 EUR
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FF600R12IE4VBOSA1 Infineon-FF600R12IE4V-DS-v02_00-en_de.pdf?fileId=5546d46145f1f3a40145f52ca8cd031e
Hersteller: Infineon Technologies
Description: PP, IHM I, XHP 1,7KV
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 600A
NTC Thermistor: Yes
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 600 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 3.35 kW
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 37000 pF @ 25 V
auf Bestellung 56 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+767.54 EUR
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FF600R12IE4PNOSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 600A 3350W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 600A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 600 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 3350 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 37 nF @ 25 V
Produkt ist nicht verfügbar
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FF600R12KE3NOSA1 FF600R12KE3_Rev2.0_2002-07-30.pdf
Hersteller: Infineon Technologies
Description: IGBT MODULE 1200V 600A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 600A
NTC Thermistor: No
Supplier Device Package: Module
Current - Collector (Ic) (Max): 850 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 2800 W
Current - Collector Cutoff (Max): 5 mA
auf Bestellung 28 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+1195.44 EUR
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FF600R12IP4VBOSA1 Infineon-FF600R12IP4V-DS-v02_00-en_de.pdf?fileId=5546d46145f1f3a40145f5704bb30790
FF600R12IP4VBOSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 600A 3350W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 600A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 600 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 3350 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 37 nF @ 25 V
Produkt ist nicht verfügbar
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CY8C3666AXI-052 #!?fileId=8ac78c8c7d0d8da4017d0ec73d263e88
CY8C3666AXI-052
Hersteller: Infineon Technologies
Description: IC MCU 8BIT 64KB FLASH 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 67MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 2K x 8
Core Processor: 8051
Data Converters: A/D 16x12b; D/A 4x8b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: EBI/EMI, I2C, LINbus, SPI, UART/USART
Peripherals: CapSense, DMA, POR, PWM, WDT
Supplier Device Package: 100-TQFP (14x14)
Part Status: Active
Number of I/O: 62
DigiKey Programmable: Not Verified
auf Bestellung 1206 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+24.62 EUR
10+17.80 EUR
25+16.04 EUR
80+14.78 EUR
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CY8C3665AXI-198 #!?fileId=8ac78c8c7d0d8da4017d0ec73d263e88
CY8C3665AXI-198
Hersteller: Infineon Technologies
Description: IC MCU 8BIT 32KB FLASH 100TQFP
Produkt ist nicht verfügbar
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CY8C3665PVI-008 #!?fileId=8ac78c8c7d0d8da4017d0ec73d263e88
CY8C3665PVI-008
Hersteller: Infineon Technologies
Description: IC MCU 8BIT 32KB FLASH 48SSOP
auf Bestellung 589 Stücke:
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Anzahl Preis
37+13.62 EUR
Mindestbestellmenge: 37
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CY8C3665PVI-008 #!?fileId=8ac78c8c7d0d8da4017d0ec73d263e88
CY8C3665PVI-008
Hersteller: Infineon Technologies
Description: IC MCU 8BIT 32KB FLASH 48SSOP
Produkt ist nicht verfügbar
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CY8C3665LTI-199 #!?fileId=8ac78c8c7d0d8da4017d0ec73d263e88
CY8C3665LTI-199
Hersteller: Infineon Technologies
Description: IC MCU 8BIT 32KB FLASH 68QFN
auf Bestellung 4953 Stücke:
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Anzahl Preis
31+13.40 EUR
Mindestbestellmenge: 31
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CY8C3666AXI-202 #!?fileId=8ac78c8c7d0d8da4017d0ec73d263e88
CY8C3666AXI-202
Hersteller: Infineon Technologies
Description: IC MCU 8BIT 64KB FLASH 100TQFP
Produkt ist nicht verfügbar
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CY8C3665PVI-080 CY8C36_RevJ.pdf
CY8C3665PVI-080
Hersteller: Infineon Technologies
Description: IC MCU 8BIT 32KB FLASH 48SSOP
auf Bestellung 60 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
30+17.05 EUR
Mindestbestellmenge: 30
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CY8C3646AXE-178
CY8C3646AXE-178
Hersteller: Infineon Technologies
Description: IC MCU 8BIT 64KB FLASH 100TQFP
Produkt ist nicht verfügbar
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S6AE103A0DGN1B200
S6AE103A0DGN1B200
Hersteller: Infineon Technologies
Description: IC PMIC ENERGY HARVESTING 24QFN
Packaging: Tape & Reel (TR)
Package / Case: 24-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 5.5V
Applications: Energy Harvesting
Supplier Device Package: 24-QFN (4x4)
Part Status: Obsolete
auf Bestellung 200 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
200+13.44 EUR
Mindestbestellmenge: 200
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S6AE103A0DGN1B200
S6AE103A0DGN1B200
Hersteller: Infineon Technologies
Description: IC PMIC ENERGY HARVESTING 24QFN
Packaging: Cut Tape (CT)
Package / Case: 24-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 5.5V
Applications: Energy Harvesting
Supplier Device Package: 24-QFN (4x4)
Part Status: Obsolete
auf Bestellung 394 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+17.97 EUR
10+16.24 EUR
25+15.48 EUR
100+13.44 EUR
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CY15V108QN-50BKXI Infineon-CY15B108QN_CY15V108QN_8Mb_EXCELON_TM_LP_Ferroelectric_RAM_F-RAM-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c80f4d329018138198d3408be
CY15V108QN-50BKXI
Hersteller: Infineon Technologies
Description: IC FRAM 8MBIT SPI 50MHZ 24FBGA
Produkt ist nicht verfügbar
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IPTC039N15NM5ATMA1 Infineon-IPTC039N15NM5-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c81ae03fc0181d8d199be3f66
IPTC039N15NM5ATMA1
Hersteller: Infineon Technologies
Description: OPTIMOS 5 POWER MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 190A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 319W (Tc)
Vgs(th) (Max) @ Id: 4.6V @ 243µA
Supplier Device Package: PG-HDSOP-16-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7300 pF @ 75 V
Produkt ist nicht verfügbar
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IPTC039N15NM5ATMA1 Infineon-IPTC039N15NM5-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c81ae03fc0181d8d199be3f66
IPTC039N15NM5ATMA1
Hersteller: Infineon Technologies
Description: OPTIMOS 5 POWER MOSFET
Packaging: Cut Tape (CT)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 190A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 319W (Tc)
Vgs(th) (Max) @ Id: 4.6V @ 243µA
Supplier Device Package: PG-HDSOP-16-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7300 pF @ 75 V
auf Bestellung 197 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+11.11 EUR
10+7.49 EUR
100+5.44 EUR
Mindestbestellmenge: 2
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IRF8915TRPBF irf8915pbf.pdf?fileId=5546d462533600a401535610fd2d1d91
IRF8915TRPBF
Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 20V 8.9A 8SO
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 8.9A
Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 10V
Rds On (Max) @ Id, Vgs: 18.3mOhm @ 8.9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 7.4nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SO
Part Status: Obsolete
auf Bestellung 14211 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
681+0.71 EUR
Mindestbestellmenge: 681
Im Einkaufswagen  Stück im Wert von  UAH
D901S45T D901S35%E2%80%A645T.pdf
D901S45T
Hersteller: Infineon Technologies
Description: DIODE GEN PURP 4.5KV 1225A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IKW50N120CH7XKSA1 Infineon-IKW50N120CH7-DataSheet-v01_10-EN.pdf?fileId=8ac78c8c84a33f400184e2a1715c2da0
IKW50N120CH7XKSA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 1200V 86A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 116 ns
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 50A
Supplier Device Package: PG-TO247-3-U06
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 39ns/319ns
Switching Energy: 2.33mJ (on), 1.12mJ (off)
Gate Charge: 375 nC
Part Status: Active
Current - Collector (Ic) (Max): 86 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 398 W
auf Bestellung 230 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+15.31 EUR
30+8.99 EUR
120+7.60 EUR
Mindestbestellmenge: 2
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CY62137FV30LL-45BVXIT Infineon-CY62137FV30_MoBL_2-Mbit_(128_K_16)_Static_RAM-DataSheet-v17_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe9762324f
CY62137FV30LL-45BVXIT
Hersteller: Infineon Technologies
Description: IC SRAM 2MBIT PARALLEL 48VFBGA
Packaging: Tape & Reel (TR)
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 2Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-VFBGA (6x8)
Part Status: Active
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 128K x 16
DigiKey Programmable: Not Verified
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2000+4.67 EUR
Mindestbestellmenge: 2000
Im Einkaufswagen  Stück im Wert von  UAH
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