Produkte > INFINEON TECHNOLOGIES > Alle Produkte des Herstellers INFINEON TECHNOLOGIES (149843) > Seite 537 nach 2498
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IAUC100N10S5L040ATMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 50A, 10V Power Dissipation (Max): 167W (Tc) Vgs(th) (Max) @ Id: 2V @ 90µA Supplier Device Package: PG-TDSON-8-34 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 50 V Qualification: AEC-Q101 |
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IAUC100N10S5L040ATMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 50A, 10V Power Dissipation (Max): 167W (Tc) Vgs(th) (Max) @ Id: 2V @ 90µA Supplier Device Package: PG-TDSON-8-34 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 50 V Qualification: AEC-Q101 |
auf Bestellung 2554 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB80N06S2LH5ATMA3 | Infineon Technologies | Description: MOSFET |
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BGS 12AL7-6 E6433 | Infineon Technologies |
![]() Features: DC Blocked, Single Line Control Packaging: Tape & Reel (TR) Package / Case: 6-XFDFN Exposed Pad Impedance: 50Ohm Mounting Type: Surface Mount Circuit: SPDT RF Type: General Purpose Operating Temperature: -30°C ~ 85°C Voltage - Supply: 2.4V ~ 3.6V Insertion Loss: 0.5dB Frequency Range: 30MHz ~ 3GHz Topology: Reflective Test Frequency: 2GHz Isolation: 25dB Supplier Device Package: PG-TSLP-7-6 |
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BGS12AL76E6327XTMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Features: DC Blocked, Single Line Control Package / Case: 6-XFDFN Exposed Pad Impedance: 50Ohm Mounting Type: Surface Mount Circuit: SPDT RF Type: General Purpose Operating Temperature: -30°C ~ 85°C Voltage - Supply: 2.4V ~ 3.6V Insertion Loss: 0.5dB Frequency Range: 30MHz ~ 3GHz Topology: Reflective Test Frequency: 2GHz Isolation: 25dB Supplier Device Package: PG-TSLP-7-6 |
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BGS12AL76E6327XTMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Features: DC Blocked, Single Line Control Package / Case: 6-XFDFN Exposed Pad Impedance: 50Ohm Mounting Type: Surface Mount Circuit: SPDT RF Type: General Purpose Operating Temperature: -30°C ~ 85°C Voltage - Supply: 2.4V ~ 3.6V Insertion Loss: 0.5dB Frequency Range: 30MHz ~ 3GHz Topology: Reflective Test Frequency: 2GHz Isolation: 25dB Supplier Device Package: PG-TSLP-7-6 |
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BGS 12A TR E6327 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Features: DC Blocked, Single Line Control Package / Case: 6-XFBGA, WLCSP Impedance: 50Ohm Circuit: SPDT RF Type: General Purpose Operating Temperature: -30°C ~ 85°C Voltage - Supply: 2.4V ~ 3.6V Insertion Loss: 0.6dB Frequency Range: 100MHz ~ 3GHz Topology: Reflective Test Frequency: 2GHz Isolation: 27dB Supplier Device Package: FWLP-6 |
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BGS12AL74E6327XTSA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Features: DC Blocked, Single Line Control Package / Case: 6-XFDFN Exposed Pad Impedance: 50Ohm Circuit: SPDT RF Type: General Purpose Operating Temperature: -30°C ~ 85°C Voltage - Supply: 2.4V ~ 3.6V Insertion Loss: 0.5dB Frequency Range: 30MHz ~ 3GHz Topology: Reflective Test Frequency: 2GHz Isolation: 25dB Supplier Device Package: TSLP-7-4 |
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BGS12AL74E6327XTSA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Features: DC Blocked, Single Line Control Package / Case: 6-XFDFN Exposed Pad Impedance: 50Ohm Circuit: SPDT RF Type: General Purpose Operating Temperature: -30°C ~ 85°C Voltage - Supply: 2.4V ~ 3.6V Insertion Loss: 0.5dB Frequency Range: 30MHz ~ 3GHz Topology: Reflective Test Frequency: 2GHz Isolation: 25dB Supplier Device Package: TSLP-7-4 |
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CY8C624ALQI-S2D42 | Infineon Technologies |
![]() Packaging: Tray Package / Case: 68-VFQFN Exposed Pad Mounting Type: Surface Mount Speed: 100MHz, 150MHz Program Memory Size: 2MB (2M x 8) RAM Size: 1M x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: External, Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F Data Converters: A/D 16x10b SAR, 16x12b Sigma-Delta; D/A 2x7/8b Core Size: 32-Bit Dual-Core Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V Connectivity: eMMC/SD/SDIO, FIFO, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART, USB Peripherals: Brown-out Detect/Reset, CapSense, Crypto - AES, I2S, DMA, LCD, LVD, POR, PWM, RSA, SHA, Temp Sensor, TRNG, WDT Supplier Device Package: 68-QFN (8x8) Part Status: Active Number of I/O: 53 DigiKey Programmable: Not Verified |
auf Bestellung 305 Stücke: Lieferzeit 10-14 Tag (e) |
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NAC1080XTMA2 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 16-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Interface: I2C, SPI, UART Type: RFID Reader/Transponder Standards: ISO 14443A Supplier Device Package: PG-DSO-16-45 |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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NAC1080XTMA2 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 16-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Interface: I2C, SPI, UART Type: RFID Reader/Transponder Standards: ISO 14443A Supplier Device Package: PG-DSO-16-45 |
auf Bestellung 4337 Stücke: Lieferzeit 10-14 Tag (e) |
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DEVKITNAC1080TOBO1 | Infineon Technologies |
![]() Packaging: Bulk For Use With/Related Products: NAC1080 Frequency: 13.56MHz Type: Near Field Communication (NFC) Supplied Contents: Board(s) Part Status: Active |
auf Bestellung 13 Stücke: Lieferzeit 10-14 Tag (e) |
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IRF3007STRLPBF | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 62A (Tc) Rds On (Max) @ Id, Vgs: 12.6mOhm @ 48A, 10V Power Dissipation (Max): 120W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D2PAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 75 V Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3270 pF @ 25 V |
auf Bestellung 2400 Stücke: Lieferzeit 10-14 Tag (e) |
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IRF3007STRLPBF | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 62A (Tc) Rds On (Max) @ Id, Vgs: 12.6mOhm @ 48A, 10V Power Dissipation (Max): 120W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D2PAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 75 V Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3270 pF @ 25 V |
auf Bestellung 3084 Stücke: Lieferzeit 10-14 Tag (e) |
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CY9AF141MBBGL-GK9E1 | Infineon Technologies |
![]() Packaging: Tray Package / Case: 96-LFBGA Mounting Type: Surface Mount Speed: 40MHz Program Memory Size: 64KB (64K x 8) RAM Size: 16K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M3 Data Converters: A/D 17x12b Core Size: 32-Bit Single-Core Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V Connectivity: CSIO, EBI/EMI, I2C, SPI, UART/USART Peripherals: LVD, POR, PWM, WDT Supplier Device Package: 96-FBGA (6x6) Number of I/O: 66 DigiKey Programmable: Not Verified |
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CY9AF142LAQN-G-AVE2 | Infineon Technologies | Description: IC MCU 32BIT 160KB FLASH 64QFN |
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CY9AF141MBPMC1-G-JNE2 | Infineon Technologies |
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CY9AF141MABGL-GK9E1 | Infineon Technologies |
Description: IC MCU 32BIT 96KB FLASH 96FBGA Packaging: Tray Package / Case: 96-LFBGA Mounting Type: Surface Mount Speed: 40MHz Program Memory Size: 96KB (96K x 8) RAM Size: 16K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: External, Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M3 Data Converters: A/D 17x12b SAR Core Size: 32-Bit Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V Connectivity: CSIO, EBI/EMI, I2C, SPI, UART/USART Peripherals: LVD, POR, PWM, WDT Supplier Device Package: 96-FBGA (6x6) Number of I/O: 66 DigiKey Programmable: Not Verified |
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CY9AF141NABGL-GK9E1 | Infineon Technologies | Description: MM MCU |
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CY9AF141NBBGL-GK9E1 | Infineon Technologies | Description: IC MCU 32BIT 64KB FLASH 112BGA |
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FF600R17KE3B2S1NOSA1 | Infineon Technologies |
![]() Packaging: Bulk Part Status: Active |
auf Bestellung 116 Stücke: Lieferzeit 10-14 Tag (e) |
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FF600R12IE4VBOSA1 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Half Bridge Inverter Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 600A NTC Thermistor: Yes IGBT Type: Trench Field Stop Part Status: Active Current - Collector (Ic) (Max): 600 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 3.35 kW Current - Collector Cutoff (Max): 5 mA Input Capacitance (Cies) @ Vce: 37000 pF @ 25 V |
auf Bestellung 56 Stücke: Lieferzeit 10-14 Tag (e) |
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FF600R12IE4PNOSA1 | Infineon Technologies |
Description: IGBT MOD 1200V 600A 3350W Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Half Bridge Operating Temperature: -40°C ~ 150°C Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 600A NTC Thermistor: Yes Supplier Device Package: Module IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 600 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 3350 W Current - Collector Cutoff (Max): 5 mA Input Capacitance (Cies) @ Vce: 37 nF @ 25 V |
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FF600R12KE3NOSA1 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: 2 Independent Operating Temperature: -40°C ~ 125°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 600A NTC Thermistor: No Supplier Device Package: Module Current - Collector (Ic) (Max): 850 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 2800 W Current - Collector Cutoff (Max): 5 mA |
auf Bestellung 28 Stücke: Lieferzeit 10-14 Tag (e) |
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FF600R12IP4VBOSA1 | Infineon Technologies |
![]() Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: 2 Independent Operating Temperature: -40°C ~ 150°C Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 600A NTC Thermistor: Yes Supplier Device Package: Module IGBT Type: Trench Field Stop Part Status: Not For New Designs Current - Collector (Ic) (Max): 600 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 3350 W Current - Collector Cutoff (Max): 5 mA Input Capacitance (Cies) @ Vce: 37 nF @ 25 V |
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CY8C3666AXI-052 | Infineon Technologies |
![]() Packaging: Tray Package / Case: 100-LQFP Mounting Type: Surface Mount Speed: 67MHz Program Memory Size: 64KB (64K x 8) RAM Size: 8K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH EEPROM Size: 2K x 8 Core Processor: 8051 Data Converters: A/D 16x12b; D/A 4x8b Core Size: 8-Bit Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V Connectivity: EBI/EMI, I2C, LINbus, SPI, UART/USART Peripherals: CapSense, DMA, POR, PWM, WDT Supplier Device Package: 100-TQFP (14x14) Part Status: Active Number of I/O: 62 DigiKey Programmable: Not Verified |
auf Bestellung 1206 Stücke: Lieferzeit 10-14 Tag (e) |
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CY8C3665AXI-198 | Infineon Technologies |
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CY8C3665PVI-008 | Infineon Technologies |
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auf Bestellung 589 Stücke: Lieferzeit 10-14 Tag (e) |
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CY8C3665PVI-008 | Infineon Technologies |
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CY8C3665LTI-199 | Infineon Technologies |
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auf Bestellung 4953 Stücke: Lieferzeit 10-14 Tag (e) |
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CY8C3666AXI-202 | Infineon Technologies |
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CY8C3665PVI-080 | Infineon Technologies |
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auf Bestellung 60 Stücke: Lieferzeit 10-14 Tag (e) |
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CY8C3646AXE-178 | Infineon Technologies | Description: IC MCU 8BIT 64KB FLASH 100TQFP |
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S6AE103A0DGN1B200 | Infineon Technologies |
Description: IC PMIC ENERGY HARVESTING 24QFN Packaging: Tape & Reel (TR) Package / Case: 24-VFQFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2V ~ 5.5V Applications: Energy Harvesting Supplier Device Package: 24-QFN (4x4) Part Status: Obsolete |
auf Bestellung 200 Stücke: Lieferzeit 10-14 Tag (e) |
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S6AE103A0DGN1B200 | Infineon Technologies |
Description: IC PMIC ENERGY HARVESTING 24QFN Packaging: Cut Tape (CT) Package / Case: 24-VFQFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2V ~ 5.5V Applications: Energy Harvesting Supplier Device Package: 24-QFN (4x4) Part Status: Obsolete |
auf Bestellung 394 Stücke: Lieferzeit 10-14 Tag (e) |
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CY15V108QN-50BKXI | Infineon Technologies |
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IPTC039N15NM5ATMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 16-PowerSOP Module Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 190A (Tc) Rds On (Max) @ Id, Vgs: 3.9mOhm @ 50A, 10V Power Dissipation (Max): 3.8W (Ta), 319W (Tc) Vgs(th) (Max) @ Id: 4.6V @ 243µA Supplier Device Package: PG-HDSOP-16-2 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7300 pF @ 75 V |
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IPTC039N15NM5ATMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 16-PowerSOP Module Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 190A (Tc) Rds On (Max) @ Id, Vgs: 3.9mOhm @ 50A, 10V Power Dissipation (Max): 3.8W (Ta), 319W (Tc) Vgs(th) (Max) @ Id: 4.6V @ 243µA Supplier Device Package: PG-HDSOP-16-2 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7300 pF @ 75 V |
auf Bestellung 197 Stücke: Lieferzeit 10-14 Tag (e) |
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IRF8915TRPBF | Infineon Technologies |
![]() Packaging: Bulk Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 8.9A Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 10V Rds On (Max) @ Id, Vgs: 18.3mOhm @ 8.9A, 10V Gate Charge (Qg) (Max) @ Vgs: 7.4nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-SO Part Status: Obsolete |
auf Bestellung 14211 Stücke: Lieferzeit 10-14 Tag (e) |
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D901S45T | Infineon Technologies |
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IKW50N120CH7XKSA1 | Infineon Technologies |
![]() Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 116 ns Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 50A Supplier Device Package: PG-TO247-3-U06 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 39ns/319ns Switching Energy: 2.33mJ (on), 1.12mJ (off) Gate Charge: 375 nC Part Status: Active Current - Collector (Ic) (Max): 86 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 200 A Power - Max: 398 W |
auf Bestellung 230 Stücke: Lieferzeit 10-14 Tag (e) |
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CY62137FV30LL-45BVXIT | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 48-VFBGA Mounting Type: Surface Mount Memory Size: 2Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.2V ~ 3.6V Technology: SRAM - Asynchronous Memory Format: SRAM Supplier Device Package: 48-VFBGA (6x8) Part Status: Active Write Cycle Time - Word, Page: 45ns Memory Interface: Parallel Access Time: 45 ns Memory Organization: 128K x 16 DigiKey Programmable: Not Verified |
auf Bestellung 2000 Stücke: Lieferzeit 10-14 Tag (e) |
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CY62137FV30LL-45BVXIT | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 48-VFBGA Mounting Type: Surface Mount Memory Size: 2Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.2V ~ 3.6V Technology: SRAM - Asynchronous Memory Format: SRAM Supplier Device Package: 48-VFBGA (6x8) Part Status: Active Write Cycle Time - Word, Page: 45ns Memory Interface: Parallel Access Time: 45 ns Memory Organization: 128K x 16 DigiKey Programmable: Not Verified |
auf Bestellung 2417 Stücke: Lieferzeit 10-14 Tag (e) |
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CYBT-253059-EVAL | Infineon Technologies |
![]() Packaging: Tray For Use With/Related Products: CYBT-253059-02 Frequency: 2.4GHz Type: Transceiver; Bluetooth® 5 Supplied Contents: Board(s), Accessories Part Status: Active |
auf Bestellung 3 Stücke: Lieferzeit 10-14 Tag (e) |
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CYBT-253059-02 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 35-SMD Module Sensitivity: -95dBm Mounting Type: Surface Mount Frequency: 2.4GHz Memory Size: 256kB Flash, 176kB RAM Operating Temperature: -30°C ~ 85°C Voltage - Supply: 2.6V ~ 3.3V Power - Output: 10.5dBm Data Rate: 3Mbps Protocol: Bluetooth v5.0 Current - Receiving: 5.9mA Current - Transmitting: 22mA Antenna Type: Integrated, Chip Modulation: GFSK RF Family/Standard: Bluetooth Serial Interfaces: GPIO, HCI, I2C, I2S, PCM, PWM, SPI, UART Part Status: Active DigiKey Programmable: Not Verified |
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CYBT-253059-02 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 35-SMD Module Sensitivity: -95dBm Mounting Type: Surface Mount Frequency: 2.4GHz Memory Size: 256kB Flash, 176kB RAM Operating Temperature: -30°C ~ 85°C Voltage - Supply: 2.6V ~ 3.3V Power - Output: 10.5dBm Data Rate: 3Mbps Protocol: Bluetooth v5.0 Current - Receiving: 5.9mA Current - Transmitting: 22mA Antenna Type: Integrated, Chip Modulation: GFSK RF Family/Standard: Bluetooth Serial Interfaces: GPIO, HCI, I2C, I2S, PCM, PWM, SPI, UART Part Status: Active DigiKey Programmable: Not Verified |
auf Bestellung 350 Stücke: Lieferzeit 10-14 Tag (e) |
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IGLR60R190D1E8238XUMA1 | Infineon Technologies |
Description: GAN HV Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12.8A (Tc) Power Dissipation (Max): 55.5W (Tc) Vgs(th) (Max) @ Id: 1.6V @ 960µA Supplier Device Package: PG-TSON-8-6 Part Status: Discontinued at Digi-Key Vgs (Max): -10V Drain to Source Voltage (Vdss): 600 V Input Capacitance (Ciss) (Max) @ Vds: 157 pF @ 400 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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IGLR60R190D1XUMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12.8A (Tc) Power Dissipation (Max): 55.5W (Tc) Vgs(th) (Max) @ Id: 1.6V @ 960µA Supplier Device Package: PG-TSON-8-6 Part Status: Active Vgs (Max): -10V Drain to Source Voltage (Vdss): 600 V Input Capacitance (Ciss) (Max) @ Vds: 157 pF @ 400 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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IDW40G65C5XKSA1 | Infineon Technologies |
![]() Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 1140pF @ 1V, 1MHz Current - Average Rectified (Io): 40A Supplier Device Package: PG-TO247-3 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 40 A Current - Reverse Leakage @ Vr: 220 µA @ 650 V |
auf Bestellung 306 Stücke: Lieferzeit 10-14 Tag (e) |
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28276189 C | Infineon Technologies | Description: IC |
Produkt ist nicht verfügbar |
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28225511 A | Infineon Technologies | Description: IC |
Produkt ist nicht verfügbar |
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28294110 A | Infineon Technologies | Description: IC |
Produkt ist nicht verfügbar |
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BSP76E6327HUMA1 | Infineon Technologies |
Description: IC PWR SWTCH N-CHAN 1:1 SOT223-4 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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CYPD2703-09FNXIT | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 9-UFBGA, WLCSP Mounting Type: Surface Mount Interface: I2C, USB Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 5.5V Applications: USB Type C Supplier Device Package: 9-WLCSP (1.38x1.35) DigiKey Programmable: Not Verified |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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CYPD2703-09FNXIT | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 9-UFBGA, WLCSP Mounting Type: Surface Mount Interface: I2C, USB Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 5.5V Applications: USB Type C Supplier Device Package: 9-WLCSP (1.38x1.35) DigiKey Programmable: Not Verified |
auf Bestellung 3394 Stücke: Lieferzeit 10-14 Tag (e) |
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S29JL064J70TFI003 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 48-TFSOP (0.724", 18.40mm Width) Mounting Type: Surface Mount Memory Size: 64Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Memory Format: FLASH Supplier Device Package: 48-TSOP Write Cycle Time - Word, Page: 70ns Memory Interface: Parallel Access Time: 70 ns Memory Organization: 8M x 8, 4M x 16 DigiKey Programmable: Verified |
auf Bestellung 2000 Stücke: Lieferzeit 10-14 Tag (e) |
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S29JL064J70TFI003 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 48-TFSOP (0.724", 18.40mm Width) Mounting Type: Surface Mount Memory Size: 64Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Memory Format: FLASH Supplier Device Package: 48-TSOP Write Cycle Time - Word, Page: 70ns Memory Interface: Parallel Access Time: 70 ns Memory Organization: 8M x 8, 4M x 16 DigiKey Programmable: Verified |
auf Bestellung 2989 Stücke: Lieferzeit 10-14 Tag (e) |
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TLE9255WLCXUMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 14-TDFN Exposed Pad Mounting Type: Surface Mount, Wettable Flank Type: Transceiver Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 4.75V ~ 5.25V Number of Drivers/Receivers: 1/1 Data Rate: 5Mbps Protocol: CANbus Supplier Device Package: PG-TSON-14-3 Duplex: Full Grade: Automotive Part Status: Active Qualification: AEC-Q100 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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TLE9255WLCXUMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 14-TDFN Exposed Pad Mounting Type: Surface Mount, Wettable Flank Type: Transceiver Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 4.75V ~ 5.25V Number of Drivers/Receivers: 1/1 Data Rate: 5Mbps Protocol: CANbus Supplier Device Package: PG-TSON-14-3 Duplex: Full Grade: Automotive Part Status: Active Qualification: AEC-Q100 |
auf Bestellung 4636 Stücke: Lieferzeit 10-14 Tag (e) |
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IAUC100N10S5L040ATMA1 |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 100A 8TDSON-34
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 50A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 2V @ 90µA
Supplier Device Package: PG-TDSON-8-34
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 50 V
Qualification: AEC-Q101
Description: MOSFET N-CH 100V 100A 8TDSON-34
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 50A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 2V @ 90µA
Supplier Device Package: PG-TDSON-8-34
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 50 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IAUC100N10S5L040ATMA1 |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 100A 8TDSON-34
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 50A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 2V @ 90µA
Supplier Device Package: PG-TDSON-8-34
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 50 V
Qualification: AEC-Q101
Description: MOSFET N-CH 100V 100A 8TDSON-34
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 50A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 2V @ 90µA
Supplier Device Package: PG-TDSON-8-34
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 50 V
Qualification: AEC-Q101
auf Bestellung 2554 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
4+ | 5.30 EUR |
10+ | 3.44 EUR |
100+ | 2.39 EUR |
500+ | 1.94 EUR |
1000+ | 1.79 EUR |
2000+ | 1.71 EUR |
IPB80N06S2LH5ATMA3 |
Hersteller: Infineon Technologies
Description: MOSFET
Description: MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BGS 12AL7-6 E6433 |
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Hersteller: Infineon Technologies
Description: IC RF SWITCH SPDT 3GHZ TSLP7-6
Features: DC Blocked, Single Line Control
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN Exposed Pad
Impedance: 50Ohm
Mounting Type: Surface Mount
Circuit: SPDT
RF Type: General Purpose
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 2.4V ~ 3.6V
Insertion Loss: 0.5dB
Frequency Range: 30MHz ~ 3GHz
Topology: Reflective
Test Frequency: 2GHz
Isolation: 25dB
Supplier Device Package: PG-TSLP-7-6
Description: IC RF SWITCH SPDT 3GHZ TSLP7-6
Features: DC Blocked, Single Line Control
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN Exposed Pad
Impedance: 50Ohm
Mounting Type: Surface Mount
Circuit: SPDT
RF Type: General Purpose
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 2.4V ~ 3.6V
Insertion Loss: 0.5dB
Frequency Range: 30MHz ~ 3GHz
Topology: Reflective
Test Frequency: 2GHz
Isolation: 25dB
Supplier Device Package: PG-TSLP-7-6
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BGS12AL76E6327XTMA1 |
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Hersteller: Infineon Technologies
Description: IC RF SWITCH SPDT 3GHZ TSLP7-6
Packaging: Tape & Reel (TR)
Features: DC Blocked, Single Line Control
Package / Case: 6-XFDFN Exposed Pad
Impedance: 50Ohm
Mounting Type: Surface Mount
Circuit: SPDT
RF Type: General Purpose
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 2.4V ~ 3.6V
Insertion Loss: 0.5dB
Frequency Range: 30MHz ~ 3GHz
Topology: Reflective
Test Frequency: 2GHz
Isolation: 25dB
Supplier Device Package: PG-TSLP-7-6
Description: IC RF SWITCH SPDT 3GHZ TSLP7-6
Packaging: Tape & Reel (TR)
Features: DC Blocked, Single Line Control
Package / Case: 6-XFDFN Exposed Pad
Impedance: 50Ohm
Mounting Type: Surface Mount
Circuit: SPDT
RF Type: General Purpose
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 2.4V ~ 3.6V
Insertion Loss: 0.5dB
Frequency Range: 30MHz ~ 3GHz
Topology: Reflective
Test Frequency: 2GHz
Isolation: 25dB
Supplier Device Package: PG-TSLP-7-6
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BGS12AL76E6327XTMA1 |
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Hersteller: Infineon Technologies
Description: IC RF SWITCH SPDT 3GHZ TSLP7-6
Packaging: Cut Tape (CT)
Features: DC Blocked, Single Line Control
Package / Case: 6-XFDFN Exposed Pad
Impedance: 50Ohm
Mounting Type: Surface Mount
Circuit: SPDT
RF Type: General Purpose
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 2.4V ~ 3.6V
Insertion Loss: 0.5dB
Frequency Range: 30MHz ~ 3GHz
Topology: Reflective
Test Frequency: 2GHz
Isolation: 25dB
Supplier Device Package: PG-TSLP-7-6
Description: IC RF SWITCH SPDT 3GHZ TSLP7-6
Packaging: Cut Tape (CT)
Features: DC Blocked, Single Line Control
Package / Case: 6-XFDFN Exposed Pad
Impedance: 50Ohm
Mounting Type: Surface Mount
Circuit: SPDT
RF Type: General Purpose
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 2.4V ~ 3.6V
Insertion Loss: 0.5dB
Frequency Range: 30MHz ~ 3GHz
Topology: Reflective
Test Frequency: 2GHz
Isolation: 25dB
Supplier Device Package: PG-TSLP-7-6
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BGS 12A TR E6327 |
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Hersteller: Infineon Technologies
Description: IC RF SWITCH SPDT 3GHZ FWLP-6
Packaging: Tape & Reel (TR)
Features: DC Blocked, Single Line Control
Package / Case: 6-XFBGA, WLCSP
Impedance: 50Ohm
Circuit: SPDT
RF Type: General Purpose
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 2.4V ~ 3.6V
Insertion Loss: 0.6dB
Frequency Range: 100MHz ~ 3GHz
Topology: Reflective
Test Frequency: 2GHz
Isolation: 27dB
Supplier Device Package: FWLP-6
Description: IC RF SWITCH SPDT 3GHZ FWLP-6
Packaging: Tape & Reel (TR)
Features: DC Blocked, Single Line Control
Package / Case: 6-XFBGA, WLCSP
Impedance: 50Ohm
Circuit: SPDT
RF Type: General Purpose
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 2.4V ~ 3.6V
Insertion Loss: 0.6dB
Frequency Range: 100MHz ~ 3GHz
Topology: Reflective
Test Frequency: 2GHz
Isolation: 27dB
Supplier Device Package: FWLP-6
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BGS12AL74E6327XTSA1 |
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Hersteller: Infineon Technologies
Description: IC RF SWITCH SPDT 3GHZ TSLP7-4
Packaging: Tape & Reel (TR)
Features: DC Blocked, Single Line Control
Package / Case: 6-XFDFN Exposed Pad
Impedance: 50Ohm
Circuit: SPDT
RF Type: General Purpose
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 2.4V ~ 3.6V
Insertion Loss: 0.5dB
Frequency Range: 30MHz ~ 3GHz
Topology: Reflective
Test Frequency: 2GHz
Isolation: 25dB
Supplier Device Package: TSLP-7-4
Description: IC RF SWITCH SPDT 3GHZ TSLP7-4
Packaging: Tape & Reel (TR)
Features: DC Blocked, Single Line Control
Package / Case: 6-XFDFN Exposed Pad
Impedance: 50Ohm
Circuit: SPDT
RF Type: General Purpose
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 2.4V ~ 3.6V
Insertion Loss: 0.5dB
Frequency Range: 30MHz ~ 3GHz
Topology: Reflective
Test Frequency: 2GHz
Isolation: 25dB
Supplier Device Package: TSLP-7-4
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BGS12AL74E6327XTSA1 |
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Hersteller: Infineon Technologies
Description: IC RF SWITCH SPDT 3GHZ TSLP7-4
Packaging: Cut Tape (CT)
Features: DC Blocked, Single Line Control
Package / Case: 6-XFDFN Exposed Pad
Impedance: 50Ohm
Circuit: SPDT
RF Type: General Purpose
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 2.4V ~ 3.6V
Insertion Loss: 0.5dB
Frequency Range: 30MHz ~ 3GHz
Topology: Reflective
Test Frequency: 2GHz
Isolation: 25dB
Supplier Device Package: TSLP-7-4
Description: IC RF SWITCH SPDT 3GHZ TSLP7-4
Packaging: Cut Tape (CT)
Features: DC Blocked, Single Line Control
Package / Case: 6-XFDFN Exposed Pad
Impedance: 50Ohm
Circuit: SPDT
RF Type: General Purpose
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 2.4V ~ 3.6V
Insertion Loss: 0.5dB
Frequency Range: 30MHz ~ 3GHz
Topology: Reflective
Test Frequency: 2GHz
Isolation: 25dB
Supplier Device Package: TSLP-7-4
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
CY8C624ALQI-S2D42 |
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Hersteller: Infineon Technologies
Description: IC MCU 32BIT 2MB FLASH 68QFN
Packaging: Tray
Package / Case: 68-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 100MHz, 150MHz
Program Memory Size: 2MB (2M x 8)
RAM Size: 1M x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
Data Converters: A/D 16x10b SAR, 16x12b Sigma-Delta; D/A 2x7/8b
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
Connectivity: eMMC/SD/SDIO, FIFO, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART, USB
Peripherals: Brown-out Detect/Reset, CapSense, Crypto - AES, I2S, DMA, LCD, LVD, POR, PWM, RSA, SHA, Temp Sensor, TRNG, WDT
Supplier Device Package: 68-QFN (8x8)
Part Status: Active
Number of I/O: 53
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 2MB FLASH 68QFN
Packaging: Tray
Package / Case: 68-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 100MHz, 150MHz
Program Memory Size: 2MB (2M x 8)
RAM Size: 1M x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
Data Converters: A/D 16x10b SAR, 16x12b Sigma-Delta; D/A 2x7/8b
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
Connectivity: eMMC/SD/SDIO, FIFO, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART, USB
Peripherals: Brown-out Detect/Reset, CapSense, Crypto - AES, I2S, DMA, LCD, LVD, POR, PWM, RSA, SHA, Temp Sensor, TRNG, WDT
Supplier Device Package: 68-QFN (8x8)
Part Status: Active
Number of I/O: 53
DigiKey Programmable: Not Verified
auf Bestellung 305 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
2+ | 16.16 EUR |
10+ | 12.71 EUR |
25+ | 11.85 EUR |
100+ | 11.43 EUR |
NAC1080XTMA2 |
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Hersteller: Infineon Technologies
Description: CONTACTLESS POWER&SENSOR
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Interface: I2C, SPI, UART
Type: RFID Reader/Transponder
Standards: ISO 14443A
Supplier Device Package: PG-DSO-16-45
Description: CONTACTLESS POWER&SENSOR
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Interface: I2C, SPI, UART
Type: RFID Reader/Transponder
Standards: ISO 14443A
Supplier Device Package: PG-DSO-16-45
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
2500+ | 2.94 EUR |
NAC1080XTMA2 |
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Hersteller: Infineon Technologies
Description: CONTACTLESS POWER&SENSOR
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Interface: I2C, SPI, UART
Type: RFID Reader/Transponder
Standards: ISO 14443A
Supplier Device Package: PG-DSO-16-45
Description: CONTACTLESS POWER&SENSOR
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Interface: I2C, SPI, UART
Type: RFID Reader/Transponder
Standards: ISO 14443A
Supplier Device Package: PG-DSO-16-45
auf Bestellung 4337 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
4+ | 5.51 EUR |
10+ | 4.13 EUR |
25+ | 3.79 EUR |
100+ | 3.41 EUR |
250+ | 3.23 EUR |
500+ | 3.12 EUR |
1000+ | 3.04 EUR |
DEVKITNAC1080TOBO1 |
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Hersteller: Infineon Technologies
Description: DEV KIT
Packaging: Bulk
For Use With/Related Products: NAC1080
Frequency: 13.56MHz
Type: Near Field Communication (NFC)
Supplied Contents: Board(s)
Part Status: Active
Description: DEV KIT
Packaging: Bulk
For Use With/Related Products: NAC1080
Frequency: 13.56MHz
Type: Near Field Communication (NFC)
Supplied Contents: Board(s)
Part Status: Active
auf Bestellung 13 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 156.38 EUR |
IRF3007STRLPBF |
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Hersteller: Infineon Technologies
Description: MOSFET N CH 75V 62A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
Rds On (Max) @ Id, Vgs: 12.6mOhm @ 48A, 10V
Power Dissipation (Max): 120W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3270 pF @ 25 V
Description: MOSFET N CH 75V 62A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
Rds On (Max) @ Id, Vgs: 12.6mOhm @ 48A, 10V
Power Dissipation (Max): 120W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3270 pF @ 25 V
auf Bestellung 2400 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
800+ | 1.54 EUR |
1600+ | 1.51 EUR |
IRF3007STRLPBF |
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Hersteller: Infineon Technologies
Description: MOSFET N CH 75V 62A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
Rds On (Max) @ Id, Vgs: 12.6mOhm @ 48A, 10V
Power Dissipation (Max): 120W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3270 pF @ 25 V
Description: MOSFET N CH 75V 62A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
Rds On (Max) @ Id, Vgs: 12.6mOhm @ 48A, 10V
Power Dissipation (Max): 120W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3270 pF @ 25 V
auf Bestellung 3084 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
5+ | 4.19 EUR |
10+ | 3.00 EUR |
100+ | 2.17 EUR |
CY9AF141MBBGL-GK9E1 |
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Hersteller: Infineon Technologies
Description: IC MCU 32BIT 64KB FLASH 96FBGA
Packaging: Tray
Package / Case: 96-LFBGA
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 17x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
Connectivity: CSIO, EBI/EMI, I2C, SPI, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 96-FBGA (6x6)
Number of I/O: 66
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 64KB FLASH 96FBGA
Packaging: Tray
Package / Case: 96-LFBGA
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 17x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
Connectivity: CSIO, EBI/EMI, I2C, SPI, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 96-FBGA (6x6)
Number of I/O: 66
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
CY9AF142LAQN-G-AVE2 |
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 160KB FLASH 64QFN
Description: IC MCU 32BIT 160KB FLASH 64QFN
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
CY9AF141MBPMC1-G-JNE2 |
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Hersteller: Infineon Technologies
Description: IC MCU 32BIT 64KB FLASH 80LQFP
Description: IC MCU 32BIT 64KB FLASH 80LQFP
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
CY9AF141MABGL-GK9E1 |
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 96KB FLASH 96FBGA
Packaging: Tray
Package / Case: 96-LFBGA
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 96KB (96K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 17x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
Connectivity: CSIO, EBI/EMI, I2C, SPI, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 96-FBGA (6x6)
Number of I/O: 66
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 96KB FLASH 96FBGA
Packaging: Tray
Package / Case: 96-LFBGA
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 96KB (96K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 17x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
Connectivity: CSIO, EBI/EMI, I2C, SPI, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 96-FBGA (6x6)
Number of I/O: 66
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen
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CY9AF141NABGL-GK9E1 |
Hersteller: Infineon Technologies
Description: MM MCU
Description: MM MCU
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
CY9AF141NBBGL-GK9E1 |
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 64KB FLASH 112BGA
Description: IC MCU 32BIT 64KB FLASH 112BGA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
FF600R17KE3B2S1NOSA1 |
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Hersteller: Infineon Technologies
Description: FF600R17 - INSULATED GATE BIPOLA
Packaging: Bulk
Part Status: Active
Description: FF600R17 - INSULATED GATE BIPOLA
Packaging: Bulk
Part Status: Active
auf Bestellung 116 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 1132.51 EUR |
FF600R12IE4VBOSA1 |
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Hersteller: Infineon Technologies
Description: PP, IHM I, XHP 1,7KV
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 600A
NTC Thermistor: Yes
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 600 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 3.35 kW
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 37000 pF @ 25 V
Description: PP, IHM I, XHP 1,7KV
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 600A
NTC Thermistor: Yes
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 600 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 3.35 kW
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 37000 pF @ 25 V
auf Bestellung 56 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 767.54 EUR |
FF600R12IE4PNOSA1 |
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 600A 3350W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 600A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 600 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 3350 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 37 nF @ 25 V
Description: IGBT MOD 1200V 600A 3350W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 600A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 600 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 3350 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 37 nF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
FF600R12KE3NOSA1 |
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Hersteller: Infineon Technologies
Description: IGBT MODULE 1200V 600A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 600A
NTC Thermistor: No
Supplier Device Package: Module
Current - Collector (Ic) (Max): 850 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 2800 W
Current - Collector Cutoff (Max): 5 mA
Description: IGBT MODULE 1200V 600A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 600A
NTC Thermistor: No
Supplier Device Package: Module
Current - Collector (Ic) (Max): 850 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 2800 W
Current - Collector Cutoff (Max): 5 mA
auf Bestellung 28 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 1195.44 EUR |
FF600R12IP4VBOSA1 |
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Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 600A 3350W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 600A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 600 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 3350 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 37 nF @ 25 V
Description: IGBT MOD 1200V 600A 3350W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 600A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 600 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 3350 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 37 nF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
CY8C3666AXI-052 |
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Hersteller: Infineon Technologies
Description: IC MCU 8BIT 64KB FLASH 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 67MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 2K x 8
Core Processor: 8051
Data Converters: A/D 16x12b; D/A 4x8b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: EBI/EMI, I2C, LINbus, SPI, UART/USART
Peripherals: CapSense, DMA, POR, PWM, WDT
Supplier Device Package: 100-TQFP (14x14)
Part Status: Active
Number of I/O: 62
DigiKey Programmable: Not Verified
Description: IC MCU 8BIT 64KB FLASH 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 67MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 2K x 8
Core Processor: 8051
Data Converters: A/D 16x12b; D/A 4x8b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: EBI/EMI, I2C, LINbus, SPI, UART/USART
Peripherals: CapSense, DMA, POR, PWM, WDT
Supplier Device Package: 100-TQFP (14x14)
Part Status: Active
Number of I/O: 62
DigiKey Programmable: Not Verified
auf Bestellung 1206 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 24.62 EUR |
10+ | 17.80 EUR |
25+ | 16.04 EUR |
80+ | 14.78 EUR |
CY8C3665AXI-198 |
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Hersteller: Infineon Technologies
Description: IC MCU 8BIT 32KB FLASH 100TQFP
Description: IC MCU 8BIT 32KB FLASH 100TQFP
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
CY8C3665PVI-008 |
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Hersteller: Infineon Technologies
Description: IC MCU 8BIT 32KB FLASH 48SSOP
Description: IC MCU 8BIT 32KB FLASH 48SSOP
auf Bestellung 589 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
37+ | 13.62 EUR |
CY8C3665PVI-008 |
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Hersteller: Infineon Technologies
Description: IC MCU 8BIT 32KB FLASH 48SSOP
Description: IC MCU 8BIT 32KB FLASH 48SSOP
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
CY8C3665LTI-199 |
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Hersteller: Infineon Technologies
Description: IC MCU 8BIT 32KB FLASH 68QFN
Description: IC MCU 8BIT 32KB FLASH 68QFN
auf Bestellung 4953 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
31+ | 13.40 EUR |
CY8C3666AXI-202 |
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Hersteller: Infineon Technologies
Description: IC MCU 8BIT 64KB FLASH 100TQFP
Description: IC MCU 8BIT 64KB FLASH 100TQFP
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
CY8C3665PVI-080 |
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Hersteller: Infineon Technologies
Description: IC MCU 8BIT 32KB FLASH 48SSOP
Description: IC MCU 8BIT 32KB FLASH 48SSOP
auf Bestellung 60 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
30+ | 17.05 EUR |
CY8C3646AXE-178 |
Hersteller: Infineon Technologies
Description: IC MCU 8BIT 64KB FLASH 100TQFP
Description: IC MCU 8BIT 64KB FLASH 100TQFP
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
S6AE103A0DGN1B200 |
Hersteller: Infineon Technologies
Description: IC PMIC ENERGY HARVESTING 24QFN
Packaging: Tape & Reel (TR)
Package / Case: 24-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 5.5V
Applications: Energy Harvesting
Supplier Device Package: 24-QFN (4x4)
Part Status: Obsolete
Description: IC PMIC ENERGY HARVESTING 24QFN
Packaging: Tape & Reel (TR)
Package / Case: 24-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 5.5V
Applications: Energy Harvesting
Supplier Device Package: 24-QFN (4x4)
Part Status: Obsolete
auf Bestellung 200 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
200+ | 13.44 EUR |
S6AE103A0DGN1B200 |
Hersteller: Infineon Technologies
Description: IC PMIC ENERGY HARVESTING 24QFN
Packaging: Cut Tape (CT)
Package / Case: 24-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 5.5V
Applications: Energy Harvesting
Supplier Device Package: 24-QFN (4x4)
Part Status: Obsolete
Description: IC PMIC ENERGY HARVESTING 24QFN
Packaging: Cut Tape (CT)
Package / Case: 24-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 5.5V
Applications: Energy Harvesting
Supplier Device Package: 24-QFN (4x4)
Part Status: Obsolete
auf Bestellung 394 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 17.97 EUR |
10+ | 16.24 EUR |
25+ | 15.48 EUR |
100+ | 13.44 EUR |
CY15V108QN-50BKXI |
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Hersteller: Infineon Technologies
Description: IC FRAM 8MBIT SPI 50MHZ 24FBGA
Description: IC FRAM 8MBIT SPI 50MHZ 24FBGA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IPTC039N15NM5ATMA1 |
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Hersteller: Infineon Technologies
Description: OPTIMOS 5 POWER MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 190A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 319W (Tc)
Vgs(th) (Max) @ Id: 4.6V @ 243µA
Supplier Device Package: PG-HDSOP-16-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7300 pF @ 75 V
Description: OPTIMOS 5 POWER MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 190A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 319W (Tc)
Vgs(th) (Max) @ Id: 4.6V @ 243µA
Supplier Device Package: PG-HDSOP-16-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7300 pF @ 75 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IPTC039N15NM5ATMA1 |
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Hersteller: Infineon Technologies
Description: OPTIMOS 5 POWER MOSFET
Packaging: Cut Tape (CT)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 190A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 319W (Tc)
Vgs(th) (Max) @ Id: 4.6V @ 243µA
Supplier Device Package: PG-HDSOP-16-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7300 pF @ 75 V
Description: OPTIMOS 5 POWER MOSFET
Packaging: Cut Tape (CT)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 190A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 319W (Tc)
Vgs(th) (Max) @ Id: 4.6V @ 243µA
Supplier Device Package: PG-HDSOP-16-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7300 pF @ 75 V
auf Bestellung 197 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
2+ | 11.11 EUR |
10+ | 7.49 EUR |
100+ | 5.44 EUR |
IRF8915TRPBF |
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Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 20V 8.9A 8SO
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 8.9A
Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 10V
Rds On (Max) @ Id, Vgs: 18.3mOhm @ 8.9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 7.4nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SO
Part Status: Obsolete
Description: MOSFET 2N-CH 20V 8.9A 8SO
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 8.9A
Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 10V
Rds On (Max) @ Id, Vgs: 18.3mOhm @ 8.9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 7.4nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SO
Part Status: Obsolete
auf Bestellung 14211 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
681+ | 0.68 EUR |
D901S45T |
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Hersteller: Infineon Technologies
Description: DIODE GEN PURP 4.5KV 1225A
Description: DIODE GEN PURP 4.5KV 1225A
Produkt ist nicht verfügbar
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IKW50N120CH7XKSA1 |
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Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 1200V 86A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 116 ns
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 50A
Supplier Device Package: PG-TO247-3-U06
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 39ns/319ns
Switching Energy: 2.33mJ (on), 1.12mJ (off)
Gate Charge: 375 nC
Part Status: Active
Current - Collector (Ic) (Max): 86 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 398 W
Description: IGBT TRENCH FS 1200V 86A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 116 ns
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 50A
Supplier Device Package: PG-TO247-3-U06
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 39ns/319ns
Switching Energy: 2.33mJ (on), 1.12mJ (off)
Gate Charge: 375 nC
Part Status: Active
Current - Collector (Ic) (Max): 86 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 398 W
auf Bestellung 230 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
2+ | 13.41 EUR |
30+ | 7.84 EUR |
120+ | 6.62 EUR |
CY62137FV30LL-45BVXIT |
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Hersteller: Infineon Technologies
Description: IC SRAM 2MBIT PARALLEL 48VFBGA
Packaging: Tape & Reel (TR)
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 2Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-VFBGA (6x8)
Part Status: Active
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 128K x 16
DigiKey Programmable: Not Verified
Description: IC SRAM 2MBIT PARALLEL 48VFBGA
Packaging: Tape & Reel (TR)
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 2Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-VFBGA (6x8)
Part Status: Active
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 128K x 16
DigiKey Programmable: Not Verified
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
2000+ | 4.67 EUR |
CY62137FV30LL-45BVXIT |
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Hersteller: Infineon Technologies
Description: IC SRAM 2MBIT PARALLEL 48VFBGA
Packaging: Cut Tape (CT)
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 2Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-VFBGA (6x8)
Part Status: Active
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 128K x 16
DigiKey Programmable: Not Verified
Description: IC SRAM 2MBIT PARALLEL 48VFBGA
Packaging: Cut Tape (CT)
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 2Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-VFBGA (6x8)
Part Status: Active
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 128K x 16
DigiKey Programmable: Not Verified
auf Bestellung 2417 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
3+ | 6.67 EUR |
10+ | 5.92 EUR |
25+ | 5.64 EUR |
50+ | 5.44 EUR |
100+ | 5.25 EUR |
250+ | 5.00 EUR |
500+ | 4.83 EUR |
1000+ | 4.66 EUR |
CYBT-253059-EVAL |
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Hersteller: Infineon Technologies
Description: AIROC CYBT-253059-EVAL KIT
Packaging: Tray
For Use With/Related Products: CYBT-253059-02
Frequency: 2.4GHz
Type: Transceiver; Bluetooth® 5
Supplied Contents: Board(s), Accessories
Part Status: Active
Description: AIROC CYBT-253059-EVAL KIT
Packaging: Tray
For Use With/Related Products: CYBT-253059-02
Frequency: 2.4GHz
Type: Transceiver; Bluetooth® 5
Supplied Contents: Board(s), Accessories
Part Status: Active
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 82.51 EUR |
CYBT-253059-02 |
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Hersteller: Infineon Technologies
Description: RF TXRX MOD BLUETOOTH CHIP SMD
Packaging: Tape & Reel (TR)
Package / Case: 35-SMD Module
Sensitivity: -95dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 256kB Flash, 176kB RAM
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 2.6V ~ 3.3V
Power - Output: 10.5dBm
Data Rate: 3Mbps
Protocol: Bluetooth v5.0
Current - Receiving: 5.9mA
Current - Transmitting: 22mA
Antenna Type: Integrated, Chip
Modulation: GFSK
RF Family/Standard: Bluetooth
Serial Interfaces: GPIO, HCI, I2C, I2S, PCM, PWM, SPI, UART
Part Status: Active
DigiKey Programmable: Not Verified
Description: RF TXRX MOD BLUETOOTH CHIP SMD
Packaging: Tape & Reel (TR)
Package / Case: 35-SMD Module
Sensitivity: -95dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 256kB Flash, 176kB RAM
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 2.6V ~ 3.3V
Power - Output: 10.5dBm
Data Rate: 3Mbps
Protocol: Bluetooth v5.0
Current - Receiving: 5.9mA
Current - Transmitting: 22mA
Antenna Type: Integrated, Chip
Modulation: GFSK
RF Family/Standard: Bluetooth
Serial Interfaces: GPIO, HCI, I2C, I2S, PCM, PWM, SPI, UART
Part Status: Active
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CYBT-253059-02 |
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Hersteller: Infineon Technologies
Description: RF TXRX MOD BLUETOOTH CHIP SMD
Packaging: Cut Tape (CT)
Package / Case: 35-SMD Module
Sensitivity: -95dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 256kB Flash, 176kB RAM
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 2.6V ~ 3.3V
Power - Output: 10.5dBm
Data Rate: 3Mbps
Protocol: Bluetooth v5.0
Current - Receiving: 5.9mA
Current - Transmitting: 22mA
Antenna Type: Integrated, Chip
Modulation: GFSK
RF Family/Standard: Bluetooth
Serial Interfaces: GPIO, HCI, I2C, I2S, PCM, PWM, SPI, UART
Part Status: Active
DigiKey Programmable: Not Verified
Description: RF TXRX MOD BLUETOOTH CHIP SMD
Packaging: Cut Tape (CT)
Package / Case: 35-SMD Module
Sensitivity: -95dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 256kB Flash, 176kB RAM
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 2.6V ~ 3.3V
Power - Output: 10.5dBm
Data Rate: 3Mbps
Protocol: Bluetooth v5.0
Current - Receiving: 5.9mA
Current - Transmitting: 22mA
Antenna Type: Integrated, Chip
Modulation: GFSK
RF Family/Standard: Bluetooth
Serial Interfaces: GPIO, HCI, I2C, I2S, PCM, PWM, SPI, UART
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 350 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 22.70 EUR |
10+ | 17.71 EUR |
25+ | 16.21 EUR |
100+ | 14.36 EUR |
250+ | 13.38 EUR |
IGLR60R190D1E8238XUMA1 |
Hersteller: Infineon Technologies
Description: GAN HV
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.8A (Tc)
Power Dissipation (Max): 55.5W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 960µA
Supplier Device Package: PG-TSON-8-6
Part Status: Discontinued at Digi-Key
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 600 V
Input Capacitance (Ciss) (Max) @ Vds: 157 pF @ 400 V
Description: GAN HV
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.8A (Tc)
Power Dissipation (Max): 55.5W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 960µA
Supplier Device Package: PG-TSON-8-6
Part Status: Discontinued at Digi-Key
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 600 V
Input Capacitance (Ciss) (Max) @ Vds: 157 pF @ 400 V
Produkt ist nicht verfügbar
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IGLR60R190D1XUMA1 |
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Hersteller: Infineon Technologies
Description: GAN HV
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.8A (Tc)
Power Dissipation (Max): 55.5W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 960µA
Supplier Device Package: PG-TSON-8-6
Part Status: Active
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 600 V
Input Capacitance (Ciss) (Max) @ Vds: 157 pF @ 400 V
Description: GAN HV
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.8A (Tc)
Power Dissipation (Max): 55.5W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 960µA
Supplier Device Package: PG-TSON-8-6
Part Status: Active
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 600 V
Input Capacitance (Ciss) (Max) @ Vds: 157 pF @ 400 V
Produkt ist nicht verfügbar
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IDW40G65C5XKSA1 |
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Hersteller: Infineon Technologies
Description: DIODE SIL CARB 650V 40A PGTO2473
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1140pF @ 1V, 1MHz
Current - Average Rectified (Io): 40A
Supplier Device Package: PG-TO247-3
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 40 A
Current - Reverse Leakage @ Vr: 220 µA @ 650 V
Description: DIODE SIL CARB 650V 40A PGTO2473
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1140pF @ 1V, 1MHz
Current - Average Rectified (Io): 40A
Supplier Device Package: PG-TO247-3
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 40 A
Current - Reverse Leakage @ Vr: 220 µA @ 650 V
auf Bestellung 306 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 23.55 EUR |
30+ | 14.34 EUR |
120+ | 12.32 EUR |
28276189 C |
Hersteller: Infineon Technologies
Description: IC
Description: IC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
28225511 A |
Hersteller: Infineon Technologies
Description: IC
Description: IC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
28294110 A |
Hersteller: Infineon Technologies
Description: IC
Description: IC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BSP76E6327HUMA1 |
Hersteller: Infineon Technologies
Description: IC PWR SWTCH N-CHAN 1:1 SOT223-4
Packaging: Tape & Reel (TR)
Description: IC PWR SWTCH N-CHAN 1:1 SOT223-4
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
CYPD2703-09FNXIT |
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Hersteller: Infineon Technologies
Description: IC USB-C CONTROLLER 9CSP
Packaging: Tape & Reel (TR)
Package / Case: 9-UFBGA, WLCSP
Mounting Type: Surface Mount
Interface: I2C, USB
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 5.5V
Applications: USB Type C
Supplier Device Package: 9-WLCSP (1.38x1.35)
DigiKey Programmable: Not Verified
Description: IC USB-C CONTROLLER 9CSP
Packaging: Tape & Reel (TR)
Package / Case: 9-UFBGA, WLCSP
Mounting Type: Surface Mount
Interface: I2C, USB
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 5.5V
Applications: USB Type C
Supplier Device Package: 9-WLCSP (1.38x1.35)
DigiKey Programmable: Not Verified
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
3000+ | 1.35 EUR |
CYPD2703-09FNXIT |
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Hersteller: Infineon Technologies
Description: IC USB-C CONTROLLER 9CSP
Packaging: Cut Tape (CT)
Package / Case: 9-UFBGA, WLCSP
Mounting Type: Surface Mount
Interface: I2C, USB
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 5.5V
Applications: USB Type C
Supplier Device Package: 9-WLCSP (1.38x1.35)
DigiKey Programmable: Not Verified
Description: IC USB-C CONTROLLER 9CSP
Packaging: Cut Tape (CT)
Package / Case: 9-UFBGA, WLCSP
Mounting Type: Surface Mount
Interface: I2C, USB
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 5.5V
Applications: USB Type C
Supplier Device Package: 9-WLCSP (1.38x1.35)
DigiKey Programmable: Not Verified
auf Bestellung 3394 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
7+ | 2.71 EUR |
10+ | 1.99 EUR |
25+ | 1.81 EUR |
100+ | 1.61 EUR |
250+ | 1.51 EUR |
500+ | 1.45 EUR |
1000+ | 1.41 EUR |
S29JL064J70TFI003 |
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Hersteller: Infineon Technologies
Description: IC FLASH 64MBIT PARALLEL 48TSOP
Packaging: Tape & Reel (TR)
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 48-TSOP
Write Cycle Time - Word, Page: 70ns
Memory Interface: Parallel
Access Time: 70 ns
Memory Organization: 8M x 8, 4M x 16
DigiKey Programmable: Verified
Description: IC FLASH 64MBIT PARALLEL 48TSOP
Packaging: Tape & Reel (TR)
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 48-TSOP
Write Cycle Time - Word, Page: 70ns
Memory Interface: Parallel
Access Time: 70 ns
Memory Organization: 8M x 8, 4M x 16
DigiKey Programmable: Verified
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1000+ | 9.37 EUR |
S29JL064J70TFI003 |
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Hersteller: Infineon Technologies
Description: IC FLASH 64MBIT PARALLEL 48TSOP
Packaging: Cut Tape (CT)
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 48-TSOP
Write Cycle Time - Word, Page: 70ns
Memory Interface: Parallel
Access Time: 70 ns
Memory Organization: 8M x 8, 4M x 16
DigiKey Programmable: Verified
Description: IC FLASH 64MBIT PARALLEL 48TSOP
Packaging: Cut Tape (CT)
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 48-TSOP
Write Cycle Time - Word, Page: 70ns
Memory Interface: Parallel
Access Time: 70 ns
Memory Organization: 8M x 8, 4M x 16
DigiKey Programmable: Verified
auf Bestellung 2989 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
2+ | 11.55 EUR |
10+ | 10.73 EUR |
25+ | 10.40 EUR |
50+ | 10.16 EUR |
100+ | 9.91 EUR |
250+ | 9.59 EUR |
500+ | 9.50 EUR |
TLE9255WLCXUMA1 |
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Hersteller: Infineon Technologies
Description: IC TRANSCEIVER FULL 1/1 TSON-14
Packaging: Tape & Reel (TR)
Package / Case: 14-TDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Type: Transceiver
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.75V ~ 5.25V
Number of Drivers/Receivers: 1/1
Data Rate: 5Mbps
Protocol: CANbus
Supplier Device Package: PG-TSON-14-3
Duplex: Full
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
Description: IC TRANSCEIVER FULL 1/1 TSON-14
Packaging: Tape & Reel (TR)
Package / Case: 14-TDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Type: Transceiver
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.75V ~ 5.25V
Number of Drivers/Receivers: 1/1
Data Rate: 5Mbps
Protocol: CANbus
Supplier Device Package: PG-TSON-14-3
Duplex: Full
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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Stück im Wert von UAH
TLE9255WLCXUMA1 |
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Hersteller: Infineon Technologies
Description: IC TRANSCEIVER FULL 1/1 TSON-14
Packaging: Cut Tape (CT)
Package / Case: 14-TDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Type: Transceiver
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.75V ~ 5.25V
Number of Drivers/Receivers: 1/1
Data Rate: 5Mbps
Protocol: CANbus
Supplier Device Package: PG-TSON-14-3
Duplex: Full
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
Description: IC TRANSCEIVER FULL 1/1 TSON-14
Packaging: Cut Tape (CT)
Package / Case: 14-TDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Type: Transceiver
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.75V ~ 5.25V
Number of Drivers/Receivers: 1/1
Data Rate: 5Mbps
Protocol: CANbus
Supplier Device Package: PG-TSON-14-3
Duplex: Full
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
auf Bestellung 4636 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
4+ | 4.79 EUR |
10+ | 3.58 EUR |
25+ | 3.28 EUR |
100+ | 2.94 EUR |
250+ | 2.79 EUR |
500+ | 2.69 EUR |
1000+ | 2.61 EUR |
2500+ | 2.53 EUR |