Produkte > INFINEON TECHNOLOGIES > Alle Produkte des Herstellers INFINEON TECHNOLOGIES (128413) > Seite 576 nach 2141
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CY3679 | Infineon Technologies |
Description: EVAL BOARD FOR CY27410Packaging: Bulk Function: Clock Generator Type: Timing Utilized IC / Part: CY27410 Supplied Contents: Board(s), Cable(s) Primary Attributes: USB Powered or External Supply Part Status: Active Contents: Board(s), Cable(s) Secondary Attributes: Graphical User Interface (GUI) |
auf Bestellung 2 Stücke: Lieferzeit 10-14 Tag (e) |
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IKQ120N120CH7XKSA1 | Infineon Technologies |
Description: IGBTPackaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 146 ns Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 120A Supplier Device Package: PG-TO247-3-U01 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 67ns/544ns Switching Energy: 7.77mJ (on), 2.95mJ (off) Test Condition: 600V, 120A, 5.6Ohm, 15V Gate Charge: 834 nC Part Status: Active Current - Collector (Ic) (Max): 170 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 480 A Power - Max: 780 W |
auf Bestellung 315 Stücke: Lieferzeit 10-14 Tag (e) |
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FF300R17ME4PBPSA1 | Infineon Technologies |
Description: IGBT MODULE 1700V 600A MODULEInput Capacitance (Cies) @ Vce: 24.5 nF @ 25 V Current - Collector Cutoff (Max): 3 mA Power - Max: 20 mW Voltage - Collector Emitter Breakdown (Max): 1700 V Current - Collector (Ic) (Max): 600 A Part Status: Active Supplier Device Package: Module NTC Thermistor: Yes Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 300A Operating Temperature: -40°C ~ 150°C Configuration: Half Bridge Input: Standard Mounting Type: Chassis Mount Package / Case: Module Packaging: Tray IGBT Type: Trench Field Stop |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 6 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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IDW75D65D1XKSA1 | Infineon Technologies |
Description: DIODE STD 650V 150A PGTO247-3Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 108 ns Technology: Standard Current - Average Rectified (Io): 150A Supplier Device Package: PG-TO247-3 Operating Temperature - Junction: -40°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 75 A Current - Reverse Leakage @ Vr: 40 µA @ 650 V |
auf Bestellung 6495 Stücke: Lieferzeit 10-14 Tag (e) |
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CY8C6347BZI-BLD34 | Infineon Technologies |
Description: IC MCU 32BIT 1MB FLASH 124VFBGAPackaging: Tray Package / Case: 124-VFBGA Mounting Type: Surface Mount Speed: 100MHz, 150MHz Program Memory Size: 1MB (1M x 8) RAM Size: 288K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: External, Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F Data Converters: A/D 16x10b SAR, 16x12b Sigma-Delta; D/A 2x7b, 1x8/12b Core Size: 32-Bit Dual-Core Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V Connectivity: FIFO, I2C, IrDA, Microwire, SmartCard, SPI, SSP, UART/USART, USB Peripherals: Brown-out Detect/Reset, CapSense, DMA, I2S, LCD, LVD, POR, PWM, Temp Sensor, WDT Supplier Device Package: 124-VFBGA (9x9) Part Status: Active Number of I/O: 84 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1300 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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CY8C6347BZI-BLD33T | Infineon Technologies |
Description: IC MCU 32BIT 1MB FLASH 116BGAPackaging: Tape & Reel (TR) Package / Case: 116-WFBGA Mounting Type: Surface Mount Speed: 100MHz, 150MHz Program Memory Size: 1MB (1M x 8) RAM Size: 288K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: External, Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F Data Converters: A/D 16x10b SAR, 16x12b Sigma-Delta; D/A 2x7b, 1x8/12b Core Size: 32-Bit Dual-Core Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V Connectivity: FIFO, I2C, IrDA, Microwire, SmartCard, SPI, SSP, UART/USART Peripherals: Brown-out Detect/Reset, CapSense, DMA, I2S, LCD, LVD, POR, PWM, Temp Sensor, WDT Supplier Device Package: 116-BGA (5.2x6.4) Part Status: Active Number of I/O: 78 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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IRS21171STRPBF | Infineon Technologies |
Description: IC GATE DRVR HIGH-SIDE 8SOICPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 10V ~ 20V Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 600 V Supplier Device Package: 8-SOIC Rise / Fall Time (Typ): 75ns, 35ns Channel Type: Single Driven Configuration: High-Side Number of Drivers: 1 Gate Type: IGBT, MOSFET (N-Channel) Logic Voltage - VIL, VIH: 0.8V, 2.5V Current - Peak Output (Source, Sink): 290mA, 600mA Part Status: Obsolete DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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AUIRS2117STR | Infineon Technologies |
Description: IC GATE DRVR HIGH-SIDE 8SOICPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 10V ~ 20V Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 600 V Supplier Device Package: 8-SOIC Rise / Fall Time (Typ): 75ns, 25ns Channel Type: Single Driven Configuration: High-Side Number of Drivers: 1 Gate Type: IGBT, MOSFET (N-Channel) Logic Voltage - VIL, VIH: 6V, 9.5V Current - Peak Output (Source, Sink): 290mA, 600mA Grade: Automotive Part Status: Not For New Designs DigiKey Programmable: Not Verified Qualification: AEC-Q100 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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AUIRS2118STR | Infineon Technologies |
Description: IC GATE DRVR HIGH-SIDE 8SOICQualification: AEC-Q100 Grade: Automotive DigiKey Programmable: Not Verified Part Status: Not For New Designs Current - Peak Output (Source, Sink): 290mA, 600mA Logic Voltage - VIL, VIH: 6V, 9.5V Gate Type: IGBT, N-Channel MOSFET Number of Drivers: 1 Driven Configuration: High-Side Channel Type: Single Rise / Fall Time (Typ): 75ns, 25ns Supplier Device Package: 8-SOIC High Side Voltage - Max (Bootstrap): 600 V Input Type: Inverting Voltage - Supply: 10V ~ 20V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| CG7611AA | Infineon Technologies |
Description: IC SRAM 36MBIT PARALLEL 165FBGADigiKey Programmable: Not Verified Memory Organization: 1M x 36 Memory Interface: Parallel Part Status: Active Supplier Device Package: 165-FBGA (13x15) Memory Format: SRAM Clock Frequency: 300 MHz Technology: SRAM - Synchronous, DDR II Voltage - Supply: 1.7V ~ 1.9V Operating Temperature: 0°C ~ 70°C (TA) Memory Type: Volatile Memory Size: 36Mbit Mounting Type: Surface Mount Package / Case: 165-LBGA Packaging: Tray |
auf Bestellung 175 Stücke: Lieferzeit 10-14 Tag (e) |
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CY7C65214D-32LTXIT | Infineon Technologies |
Description: USB Full-Speed PeripheralsDigiKey Programmable: Not Verified Part Status: Active Supplier Device Package: 32-QFN (5x5) Standards: USB 2.0 Protocol: USB Current - Supply: 18mA Voltage - Supply: 1.71V ~ 1.89V, 2V ~ 3.45V, 3.15V ~ 5.25V, 4.35V ~ 5.5V Operating Temperature: -40°C ~ 85°C (TA) Interface: GPIO, SPI Function: Bridge Package / Case: 32-VFQFN Exposed Pad Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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CY8C4045LQI-S412T | Infineon Technologies |
Description: IC MCU 32BIT 32KB FLASH 32QFNDigiKey Programmable: Not Verified Number of I/O: 27 Part Status: Active Supplier Device Package: 32-QFN (5x5) Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V Core Size: 32-Bit Single-Core Data Converters: A/D 1x10b Core Processor: ARM® Cortex®-M0+ Program Memory Type: FLASH Oscillator Type: Internal Operating Temperature: -40°C ~ 85°C (TA) RAM Size: 4K x 8 Program Memory Size: 32KB (32K x 8) Speed: 48MHz Mounting Type: Surface Mount Package / Case: 32-UFQFN Exposed Pad Packaging: Tape & Reel (TR) |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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CY8C4045LQI-S412T | Infineon Technologies |
Description: IC MCU 32BIT 32KB FLASH 32QFNDigiKey Programmable: Not Verified Number of I/O: 27 Part Status: Active Supplier Device Package: 32-QFN (5x5) Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V Core Size: 32-Bit Single-Core Data Converters: A/D 1x10b Core Processor: ARM® Cortex®-M0+ Program Memory Type: FLASH Oscillator Type: Internal Operating Temperature: -40°C ~ 85°C (TA) RAM Size: 4K x 8 Program Memory Size: 32KB (32K x 8) Speed: 48MHz Mounting Type: Surface Mount Package / Case: 32-UFQFN Exposed Pad Packaging: Cut Tape (CT) |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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IRS2112STRPBF | Infineon Technologies |
Description: IC GATE DRVR HALF-BRIDGE 16SOICPackaging: Tape & Reel (TR) Package / Case: 16-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 10V ~ 20V Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 600 V Supplier Device Package: 16-SOIC Rise / Fall Time (Typ): 75ns, 35ns Channel Type: Independent Driven Configuration: Half-Bridge Number of Drivers: 2 Gate Type: IGBT, MOSFET (N-Channel) Logic Voltage - VIL, VIH: 6V, 9.5V Current - Peak Output (Source, Sink): 290mA, 600mA Part Status: Active DigiKey Programmable: Not Verified |
auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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IRS2112STRPBF | Infineon Technologies |
Description: IC GATE DRVR HALF-BRIDGE 16SOICPackaging: Cut Tape (CT) Package / Case: 16-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 10V ~ 20V Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 600 V Supplier Device Package: 16-SOIC Rise / Fall Time (Typ): 75ns, 35ns Channel Type: Independent Driven Configuration: Half-Bridge Number of Drivers: 2 Gate Type: IGBT, MOSFET (N-Channel) Logic Voltage - VIL, VIH: 6V, 9.5V Current - Peak Output (Source, Sink): 290mA, 600mA Part Status: Active DigiKey Programmable: Not Verified |
auf Bestellung 2979 Stücke: Lieferzeit 10-14 Tag (e) |
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IKQ75N120CS6XKSA1 | Infineon Technologies |
Description: IGBT TRENCH FS 1200V 150A TO247Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 440 ns Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 75A Supplier Device Package: PG-TO247-3-46 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 34ns/300ns Switching Energy: 5.15mJ (on), 2.95mJ (off) Test Condition: 600V, 75A, 4Ohm, 15V Gate Charge: 530 nC Part Status: Active Current - Collector (Ic) (Max): 150 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 300 A Power - Max: 880 W |
auf Bestellung 1640 Stücke: Lieferzeit 10-14 Tag (e) |
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TLE75080ESDXUMA1 | Infineon Technologies |
Description: IC PWR DRVR N-CHAN 1:8 TSDSO-24Packaging: Tape & Reel (TR) Features: Slew Rate Controlled Package / Case: 24-TSSOP (0.154", 3.90mm Width) Exposed Pad Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 8 Interface: SPI Switch Type: Relay, Solenoid Driver Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: High Side or Low Side Rds On (Typ): 1Ohm Voltage - Load: 3V ~ 28V Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V Current - Output (Max): 330mA Ratio - Input:Output: 1:8 Supplier Device Package: PG-TSDSO-24-21 Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage Part Status: Active Grade: Automotive Qualification: AEC-Q100 |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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TLE75080ESDXUMA1 | Infineon Technologies |
Description: IC PWR DRVR N-CHAN 1:8 TSDSO-24Packaging: Cut Tape (CT) Features: Slew Rate Controlled Package / Case: 24-TSSOP (0.154", 3.90mm Width) Exposed Pad Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 8 Interface: SPI Switch Type: Relay, Solenoid Driver Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: High Side or Low Side Rds On (Typ): 1Ohm Voltage - Load: 3V ~ 28V Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V Current - Output (Max): 330mA Ratio - Input:Output: 1:8 Supplier Device Package: PG-TSDSO-24-21 Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage Part Status: Active Grade: Automotive Qualification: AEC-Q100 |
auf Bestellung 9055 Stücke: Lieferzeit 10-14 Tag (e) |
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IKFW90N60EH3XKSA1 | Infineon Technologies |
Description: IGBT TRENCH FS 600V 77A TO-247-3Power - Max: 178 W Current - Collector Pulsed (Icm): 300 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 77 A Part Status: Active Gate Charge: 440 nC Test Condition: 400V, 75A, 5Ohm, 15V Switching Energy: 2.65mJ (on), 1.3mJ (off) Td (on/off) @ 25°C: 32ns/210ns IGBT Type: Trench Field Stop Supplier Device Package: PG-TO247-3-AI Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 75A Reverse Recovery Time (trr): 107 ns Input Type: Standard Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube |
auf Bestellung 244 Stücke: Lieferzeit 10-14 Tag (e) |
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IHW40N135R5XKSA1 | Infineon Technologies |
Description: IGBT TRENCH FS 1350V 80A TO247-3Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 40A Supplier Device Package: PG-TO247-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: -/410ns Switching Energy: 2mJ (off) Test Condition: 600V, 40A, 10Ohm, 15V Gate Charge: 305 nC Part Status: Active Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 1350 V Current - Collector Pulsed (Icm): 120 A Power - Max: 394 W |
auf Bestellung 799 Stücke: Lieferzeit 10-14 Tag (e) |
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IHW30N160R5XKSA1 | Infineon Technologies |
Description: IGBT 1600V 60A TO247-3Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 30A Supplier Device Package: PG-TO247-3 Td (on/off) @ 25°C: -/290ns Switching Energy: -, 350µJ (off) Test Condition: 600V, 30A, 10Ohm, 15V Gate Charge: 205 nC Part Status: Active Current - Collector (Ic) (Max): 60 A Voltage - Collector Emitter Breakdown (Max): 1600 V Current - Collector Pulsed (Icm): 90 A Power - Max: 263 W |
auf Bestellung 15966 Stücke: Lieferzeit 10-14 Tag (e) |
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IHW30N120R5XKSA1 | Infineon Technologies |
Description: IGBT TRENCH FS 1200V 60A TO247-3Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 30A Supplier Device Package: PG-TO247-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: -/330ns Switching Energy: 1.1mJ (off) Test Condition: 600V, 30A, 10Ohm, 15V Gate Charge: 235 nC Part Status: Active Current - Collector (Ic) (Max): 60 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 90 A Power - Max: 330 W |
auf Bestellung 1597 Stücke: Lieferzeit 10-14 Tag (e) |
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S25HL512TDPNHM010 | Infineon Technologies |
Description: IC FLASH 512MBIT SPI/QUAD 8WSONPackaging: Tray Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 512Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-WSON (6x8) Part Status: Active Memory Interface: SPI - Quad I/O, QPI Memory Organization: 64M x 8 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 338 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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AUIRFR48ZTRL | Infineon Technologies |
Description: MOSFET N-CH 55V 42A DPAKPackaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 42A (Tc) Rds On (Max) @ Id, Vgs: 11mOhm @ 37A, 10V Power Dissipation (Max): 91W (Tc) Vgs(th) (Max) @ Id: 4V @ 50µA Supplier Device Package: TO-252AA (DPAK) Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1720 pF @ 25 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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AUIRFR48Z | Infineon Technologies |
Description: MOSFET N-CH 55V 42A DPAKPackaging: Tube Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 42A (Tc) Rds On (Max) @ Id, Vgs: 11mOhm @ 37A, 10V Power Dissipation (Max): 91W (Tc) Vgs(th) (Max) @ Id: 4V @ 50µA Supplier Device Package: D-Pak Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1720 pF @ 25 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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IPB77N06S212ATMA2 | Infineon Technologies |
Description: MOSFET N-CH 55V 77A TO263-3Input Capacitance (Ciss) (Max) @ Vds: 1770 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Drain to Source Voltage (Vdss): 55 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: PG-TO263-3-2 Vgs(th) (Max) @ Id: 4V @ 93µA Power Dissipation (Max): 158W (Tc) Rds On (Max) @ Id, Vgs: 11.7mOhm @ 38A, 10V Current - Continuous Drain (Id) @ 25°C: 77A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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BTS712204ESPXUMA1 | Infineon Technologies |
Description: SPOC PG-TSDSO-24Features: Load Discharge, PWM Input, Slew Rate Controlled, Status Flag Packaging: Tape & Reel (TR) Package / Case: 24-TSSOP (0.154", 3.90mm Width) Exposed Pad Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 4 Interface: PWM, SPI Switch Type: Relay, Solenoid Driver Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: High Side Rds On (Typ): 9.5mOhm, 22.5mOhm Input Type: Non-Inverting Voltage - Load: 6V ~ 28V Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V Current - Output (Max): 3A, 3A, 5A, 5A Ratio - Input:Output: 1:4 Supplier Device Package: PG-TSDSO-24-32 Fault Protection: Current Limiting (Fixed), Over Load, Over Temperature, Over Voltage, Reverse Battery, Short Circuit, UVLO Grade: Automotive Part Status: Active Qualification: AEC-Q100 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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BTS712204ESPXUMA1 | Infineon Technologies |
Description: SPOC PG-TSDSO-24Features: Load Discharge, PWM Input, Slew Rate Controlled, Status Flag Packaging: Cut Tape (CT) Package / Case: 24-TSSOP (0.154", 3.90mm Width) Exposed Pad Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 4 Interface: PWM, SPI Switch Type: Relay, Solenoid Driver Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: High Side Rds On (Typ): 9.5mOhm, 22.5mOhm Input Type: Non-Inverting Voltage - Load: 6V ~ 28V Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V Current - Output (Max): 3A, 3A, 5A, 5A Ratio - Input:Output: 1:4 Supplier Device Package: PG-TSDSO-24-32 Fault Protection: Current Limiting (Fixed), Over Load, Over Temperature, Over Voltage, Reverse Battery, Short Circuit, UVLO Grade: Automotive Part Status: Active Qualification: AEC-Q100 |
auf Bestellung 1425 Stücke: Lieferzeit 10-14 Tag (e) |
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BTS70802EPZXUMA1 | Infineon Technologies |
Description: PROFET PG-TSDSO-14Features: Slew Rate Controlled Packaging: Tape & Reel (TR) Package / Case: 14-SOIC (0.154", 3.90mm Width) Exposed Pad Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 2 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 175°C (TJ) Output Configuration: High Side Rds On (Typ): 20.9mOhm Input Type: Non-Inverting Voltage - Load: 6V ~ 18V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 3A Ratio - Input:Output: 1:1 Supplier Device Package: PG-TDSO-14-11 Fault Protection: Over Current, Over Temperature, Over Voltage, Short Circuit Grade: Automotive Part Status: Active Qualification: AEC-Q100 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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BTS70802EPZXUMA1 | Infineon Technologies |
Description: PROFET PG-TSDSO-14Features: Slew Rate Controlled Packaging: Cut Tape (CT) Package / Case: 14-SOIC (0.154", 3.90mm Width) Exposed Pad Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 2 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 175°C (TJ) Output Configuration: High Side Rds On (Typ): 20.9mOhm Input Type: Non-Inverting Voltage - Load: 6V ~ 18V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 3A Ratio - Input:Output: 1:1 Supplier Device Package: PG-TDSO-14-11 Fault Protection: Over Current, Over Temperature, Over Voltage, Short Circuit Grade: Automotive Part Status: Active Qualification: AEC-Q100 |
auf Bestellung 1810 Stücke: Lieferzeit 10-14 Tag (e) |
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BTS70081EPZXUMA1 | Infineon Technologies |
Description: PROFET PG-TSDSO-14Features: Slew Rate Controlled Packaging: Cut Tape (CT) Package / Case: 14-SOIC (0.154", 3.90mm Width) Exposed Pad Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 175°C (TJ) Output Configuration: High Side Rds On (Typ): 9mOhm Input Type: Non-Inverting Voltage - Load: 6V ~ 18V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 10A Ratio - Input:Output: 1:1 Supplier Device Package: PG-TDSO-14-11 Fault Protection: Over Current, Over Temperature, Over Voltage, Short Circuit Grade: Automotive Part Status: Active Qualification: AEC-Q100 |
auf Bestellung 5315 Stücke: Lieferzeit 10-14 Tag (e) |
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TC1791F512F240EPABKXUMA2 | Infineon Technologies |
Description: IC MCU 32BIT 4MB FLASH 292LFBGAPackaging: Tape & Reel (TR) Package / Case: 292-LFBGA Mounting Type: Surface Mount Speed: 240MHz Program Memory Size: 4MB (4M x 8) RAM Size: 288K x 8 Operating Temperature: -40°C ~ 125°C (TA) Oscillator Type: External Program Memory Type: FLASH EEPROM Size: 192K x 8 Core Processor: TriCore™ Data Converters: A/D 8x10b, 44x12b Core Size: 32-Bit Voltage - Supply (Vcc/Vdd): 1.17V ~ 3.63V Connectivity: ASC, CANbus, FlexRay, MLI, MSC, SSC Peripherals: DMA, POR, WDT Supplier Device Package: PG-LFBGA-292-6 Part Status: Active Number of I/O: 128 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| CY9AF004BGL-G107MJK1ERE1 | Infineon Technologies |
Description: MM MCU Packaging: Tape & Reel (TR) Part Status: Active DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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IRFR4620PBF | Infineon Technologies |
Description: MOSFET N-CH 200V 24A D-PAKPackaging: Tube Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Rds On (Max) @ Id, Vgs: 78mOhm @ 15A, 10V Power Dissipation (Max): 144W (Tc) Vgs(th) (Max) @ Id: 5V @ 100µA Supplier Device Package: TO-252AA (DPAK) Part Status: Discontinued at Digi-Key Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1710 pF @ 50 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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AUIRLR120N | Infineon Technologies |
Description: MOSFET N-CH 100V 10A DPAKPackaging: Tube Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 185mOhm @ 6A, 10V Power Dissipation (Max): 48W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: TO-252AA (DPAK) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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BCR135E6433HTMA1 | Infineon Technologies |
Description: TRANS PREBIAS NPN 50V SOT23Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V Supplier Device Package: PG-SOT23 Part Status: Discontinued at Digi-Key Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 150 MHz Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 47 kOhms Grade: Automotive Qualification: AEC-Q101 Resistors Included: R1 and R2 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 40000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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MB91F467DBPFVS-GS-N2K5E2 | Infineon Technologies |
Description: IC MCU 32B 1.0625MB FLASH 208QFP DigiKey Programmable: Not Verified Number of I/O: 170 Part Status: Discontinued at Digi-Key Supplier Device Package: 208-QFP (28x28) Peripherals: DMA, LVD, PWM, WDT Connectivity: CANbus, EBI/EMI, I2C, LINbus, UART/USART Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V Core Size: 32-Bit Single-Core Data Converters: A/D 24x10b Core Processor: FR60 RISC Program Memory Type: FLASH Oscillator Type: External Operating Temperature: -40°C ~ 105°C (TA) RAM Size: 72K x 8 Program Memory Size: 1.0625MB (1.0625M x 8) Speed: 96MHz Mounting Type: Surface Mount Package / Case: 208-BQFP Packaging: Tray |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| MB91F467DBPFVS-GSK5E2 | Infineon Technologies |
Description: IC AUTO MCU 208HQFP DigiKey Programmable: Not Verified Number of I/O: 170 Part Status: Obsolete Supplier Device Package: 208-QFP (28x28) Peripherals: DMA, LVD, PWM, WDT Connectivity: CANbus, EBI/EMI, I²C, LINbus, UART/USART Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V Core Size: 32-Bit Single-Core Data Converters: A/D 24x10b Core Processor: FR60 RISC Program Memory Type: FLASH Oscillator Type: External Operating Temperature: -40°C ~ 105°C (TA) RAM Size: 72K x 8 Program Memory Size: 1.0625MB (1.0625M x 8) Speed: 96MHz Mounting Type: Surface Mount Package / Case: 208-BQFP Packaging: Tray |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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CY91F467DBPFVS-GS-UJE2 | Infineon Technologies |
Description: IC MCU 32B 1.0625MB FLASH 208QFP DigiKey Programmable: Not Verified Number of I/O: 170 Part Status: Obsolete Supplier Device Package: 208-QFP (28x28) Peripherals: DMA, LVD, PWM, WDT Connectivity: CANbus, EBI/EMI, I2C, LINbus, UART/USART Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V Core Size: 32-Bit Single-Core Data Converters: A/D 24x10b Core Processor: FR60 RISC Program Memory Type: FLASH Oscillator Type: External Operating Temperature: -40°C ~ 105°C (TA) RAM Size: 72K x 8 Program Memory Size: 1.0625MB (1.0625M x 8) Speed: 96MHz Mounting Type: Surface Mount Package / Case: 208-BQFP Packaging: Tray |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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BGSX24MU16E6327XUSA1 | Infineon Technologies |
Description: IC RF SWITCH DP4T 5GHZ ULGA16-1Packaging: Cut Tape (CT) Package / Case: 16-UFLGA Exposed Pad Impedance: 50Ohm Mounting Type: Surface Mount Circuit: DP4T RF Type: GSM, LTE, W-CDMA Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 3.4V Insertion Loss: 1dB Frequency Range: 100MHz ~ 5GHz Test Frequency: 5GHz Isolation: 34dB Supplier Device Package: PG-ULGA-16-1 IIP3: 77dBm Part Status: Active |
auf Bestellung 4282 Stücke: Lieferzeit 10-14 Tag (e) |
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BGSX33M5U16E6327XTSA1 | Infineon Technologies |
Description: IC RF SWITCH 3P3T 7.125GHZPart Status: Active Isolation: 33dB Test Frequency: 5.925GHz ~ 7.125GHz Frequency Range: 600MHz ~ 7.125GHz Insertion Loss: 1.02dB Voltage - Supply: 1.65V ~ 1.95V Operating Temperature: -40°C ~ 85°C (TA) RF Type: 5G, GSM, LTE, WCDMA Circuit: 3P3T Mounting Type: Surface Mount Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 4500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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BGSX33M5U16E6327XTSA1 | Infineon Technologies |
Description: IC RF SWITCH 3P3T 7.125GHZPart Status: Active Isolation: 33dB Test Frequency: 5.925GHz ~ 7.125GHz Frequency Range: 600MHz ~ 7.125GHz Insertion Loss: 1.02dB Voltage - Supply: 1.65V ~ 1.95V Operating Temperature: -40°C ~ 85°C (TA) RF Type: 5G, GSM, LTE, WCDMA Circuit: 3P3T Mounting Type: Surface Mount Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PASCO2V01XUMA1 | Infineon Technologies |
Description: SENSOR CARBON DIOXIDE I2C OUTPUTPart Status: Discontinued at Digi-Key Current - Supply: 800µA, 6.1mA Voltage - Supply: 3V ~ 3.6V, 10.8V ~ 13.2V Operating Temperature: 0°C ~ 50°C Type: Carbon Dioxide (CO2) Output: I2C, PWM, UART Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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S6J351CHTBSC20000 | Infineon Technologies |
Description: TRAVEO-40NMNumber of I/O: 94 Part Status: Active Supplier Device Package: 144-TEQFP (16x16) Peripherals: DMA, I2S, LCD, LVD, POR, PWM, WDT Connectivity: CANbus, CSIO, I2C, LINbus, UART/USART Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Core Size: 32-Bit Data Converters: A/D 40x12b Core Processor: Arm® Cortex®-R5F Program Memory Type: FLASH Oscillator Type: Internal Operating Temperature: -40°C ~ 105°C (TA) RAM Size: 256K x 8 Speed: 132MHz Mounting Type: Surface Mount Package / Case: 144-LQFP Exposed Pad Packaging: Tray Program Memory Size: 2.112M x 8 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 840 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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S6J3429HUBSV20000 | Infineon Technologies |
Description: TRAVEO-40NMPackaging: Tray Package / Case: 144-LQFP Mounting Type: Surface Mount Speed: 40MHz Program Memory Size: 832KB (832K x 8) RAM Size: 92K x 8 Operating Temperature: -40°C ~ 105°C (TA) Oscillator Type: Internal Program Memory Type: FLASH EEPROM Size: 112K x 8 Core Processor: Arm® Cortex®-R5F Data Converters: A/D 56x12b Core Size: 32-Bit Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V Connectivity: CANbus, CSIO, I2C, LINbus, SPI, UART/USART Peripherals: DMA, POR, PWM, WDT Supplier Device Package: 144-LQFP (20x20) Part Status: Active Number of I/O: 144 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 600 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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S6J3429HVBSV20000 | Infineon Technologies |
Description: TRAVEO-40NMPackaging: Tray Package / Case: 144-LQFP Mounting Type: Surface Mount Speed: 40MHz Program Memory Size: 832KB (832K x 8) RAM Size: 92K x 8 Operating Temperature: -40°C ~ 105°C (TA) Oscillator Type: Internal Program Memory Type: FLASH EEPROM Size: 112K x 8 Core Processor: Arm® Cortex®-R5F Data Converters: A/D 56x12b Core Size: 32-Bit Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V Connectivity: CANbus, CSIO, I2C, LINbus, SPI, UART/USART Peripherals: DMA, POR, PWM, WDT Supplier Device Package: 144-LQFP (20x20) Part Status: Active Number of I/O: 144 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 600 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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IPB180N03S4L01ATMA1 | Infineon Technologies |
Description: MOSFET N-CH 30V 180A TO263-7Packaging: Tape & Reel (TR) Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Rds On (Max) @ Id, Vgs: 1.05mOhm @ 100A, 10V Power Dissipation (Max): 188W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 140µA Supplier Device Package: PG-TO263-7-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 239 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 17600 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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IPB180N03S4L01ATMA1 | Infineon Technologies |
Description: MOSFET N-CH 30V 180A TO263-7Packaging: Cut Tape (CT) Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Rds On (Max) @ Id, Vgs: 1.05mOhm @ 100A, 10V Power Dissipation (Max): 188W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 140µA Supplier Device Package: PG-TO263-7-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 239 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 17600 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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IPP80N04S4L04AKSA1 | Infineon Technologies |
Description: MOSFET N-CH 40V 80A TO220-3-1Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 4.3mOhm @ 80A, 10V Power Dissipation (Max): 71W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 35µA Supplier Device Package: PG-TO220-3-1 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): +20V, -16V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4690 pF @ 25 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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IPB80N04S204ATMA2 | Infineon Technologies |
Description: MOSFET N-CH 40V 80A TO263-3Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 3.4mOhm @ 80A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PG-TO263-3-2 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 25 V Qualification: AEC-Q101 |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB80N04S204ATMA2 | Infineon Technologies |
Description: MOSFET N-CH 40V 80A TO263-3Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 3.4mOhm @ 80A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PG-TO263-3-2 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 25 V Qualification: AEC-Q101 |
auf Bestellung 6388 Stücke: Lieferzeit 10-14 Tag (e) |
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CY8C4128LQI-BL553 | Infineon Technologies |
Description: IC RF TXRX+MCU BLE 56QFNPackaging: Tray Package / Case: 56-UFQFN Exposed Pad Sensitivity: -91dBm Mounting Type: Surface Mount Frequency: 2.4GHz Memory Size: 256kB Flash, 8kB ROM, 32kB SRAM Type: TxRx + MCU Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 1.71V ~ 5.5V Power - Output: 3dBm Protocol: Bluetooth v4.2 Current - Receiving: 16.4mA ~ 21.5mA Data Rate (Max): 8Mbps Current - Transmitting: 12.5mA ~ 20mA Supplier Device Package: 56-QFN (7x7) GPIO: 36 Modulation: GFSK RF Family/Standard: Bluetooth Serial Interfaces: I2C, SPI, UART Part Status: Active DigiKey Programmable: Not Verified |
auf Bestellung 1300 Stücke: Lieferzeit 10-14 Tag (e) |
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| MB89925PF-G-166-BNDE1 | Infineon Technologies |
Description: IC MCU 8BIT 16KB MROM 80PQFP DigiKey Programmable: Not Verified Number of I/O: 69 Part Status: Obsolete Supplier Device Package: 80-QFP (14x20) Peripherals: LCD, LVD, POR, PWM, WDT Connectivity: Serial I/O, UART/USART Voltage - Supply (Vcc/Vdd): 2.2V ~ 6V Core Size: 8-Bit Data Converters: A/D 8x10b Core Processor: F²MC-8L Program Memory Type: Mask ROM Oscillator Type: External Operating Temperature: -40°C ~ 85°C (TA) RAM Size: 512 x 8 Program Memory Size: 16KB (16K x 8) Speed: 8MHz Mounting Type: Surface Mount Package / Case: 80-BQFP Packaging: Tray |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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CY8C21534B-24PVXIT | Infineon Technologies |
Description: IC MCU 8BIT 8KB FLASH 28SSOPPackaging: Tape & Reel (TR) Package / Case: 28-SSOP (0.209", 5.30mm Width) Mounting Type: Surface Mount Speed: 24MHz Program Memory Size: 8KB (8K x 8) RAM Size: 512 x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: M8C Data Converters: A/D 28x8b Core Size: 8-Bit Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.25V Connectivity: I2C, SPI, UART/USART Peripherals: POR, PWM, WDT Supplier Device Package: 28-SSOP Part Status: Active Number of I/O: 24 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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CY7C1353G-100AXC | Infineon Technologies |
Description: IC SRAM 4.5MBIT PAR 100TQFPMemory Organization: 256K x 18 Access Time: 8 ns Memory Interface: Parallel Part Status: Active Supplier Device Package: 100-TQFP (14x20) Memory Format: SRAM Clock Frequency: 100 MHz Technology: SRAM - Synchronous, SDR Voltage - Supply: 3.135V ~ 3.465V Operating Temperature: 0°C ~ 70°C (TA) Memory Type: Volatile Memory Size: 4.5Mbit Mounting Type: Surface Mount Package / Case: 100-LQFP Packaging: Tray DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 360 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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CY7C1041CV33-10BAJXET | Infineon Technologies |
Description: IC SRAM 4MBIT PARALLEL 48FBGADigiKey Programmable: Not Verified Memory Organization: 256K x 16 Access Time: 10 ns Memory Interface: Parallel Write Cycle Time - Word, Page: 10ns Part Status: Discontinued at Digi-Key Supplier Device Package: 48-FBGA (7x8.5) Memory Format: SRAM Technology: SRAM - Asynchronous Voltage - Supply: 3V ~ 3.6V Operating Temperature: -40°C ~ 125°C (TA) Memory Type: Volatile Memory Size: 4Mbit Mounting Type: Surface Mount Package / Case: 48-TFBGA Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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MB39A136PFT-G-BND-ERE1 | Infineon Technologies |
Description: IC REG CTRLR BUCK 24TSSOPNumber of Outputs: 2 Part Status: Obsolete Clock Sync: No Duty Cycle (Max): 80% Output Phases: 2 Control Features: Current Limit, Soft Start Synchronous Rectifier: Yes Supplier Device Package: 24-TSSOP Voltage - Supply (Vcc/Vdd): 4.5V ~ 25V Topology: Buck Frequency - Switching: 500kHz Output Configuration: Positive Operating Temperature: -30°C ~ 85°C (TA) Function: Step-Down Mounting Type: Surface Mount Output Type: Transistor Driver Package / Case: 24-TFSOP (0.173", 4.40mm Width) Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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MB39A136PFT-G-BND-ERE1 | Infineon Technologies |
Description: IC REG CTRLR BUCK 24TSSOPNumber of Outputs: 2 Part Status: Obsolete Clock Sync: No Duty Cycle (Max): 80% Output Phases: 2 Control Features: Current Limit, Soft Start Synchronous Rectifier: Yes Supplier Device Package: 24-TSSOP Voltage - Supply (Vcc/Vdd): 4.5V ~ 25V Topology: Buck Frequency - Switching: 500kHz Output Configuration: Positive Operating Temperature: -30°C ~ 85°C (TA) Mounting Type: Surface Mount Output Type: Transistor Driver Package / Case: 24-TFSOP (0.173", 4.40mm Width) Packaging: Cut Tape (CT) Function: Step-Down |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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T590N16TOFXPSA1 | Infineon Technologies |
Description: SCR MODULE 1.8KV 1250A DO-200ABVoltage - Off State: 1.8 kV Current - On State (It (RMS)) (Max): 1250 A Part Status: Active Voltage - Gate Trigger (Vgt) (Max): 2.2 V Current - On State (It (AV)) (Max): 590 A Number of SCRs, Diodes: 1 SCR Current - Non Rep. Surge 50, 60Hz (Itsm): 9400A @ 50Hz Current - Gate Trigger (Igt) (Max): 250 mA Current - Hold (Ih) (Max): 300 mA Structure: Single Operating Temperature: -40°C ~ 125°C Mounting Type: Clamp On Package / Case: DO-200AB, B-PUK Packaging: Tray |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 6 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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T640N16TOFXPSA1 | Infineon Technologies |
Description: SCR MODULE 1.8KV 1250A DO-200ABVoltage - Off State: 1.8 kV Current - On State (It (RMS)) (Max): 1250 A Part Status: Active Voltage - Gate Trigger (Vgt) (Max): 2.2 V Current - On State (It (AV)) (Max): 644 A Number of SCRs, Diodes: 1 SCR Current - Non Rep. Surge 50, 60Hz (Itsm): 9400A @ 50Hz Current - Gate Trigger (Igt) (Max): 250 mA Current - Hold (Ih) (Max): 300 mA Structure: Single Operating Temperature: -40°C ~ 125°C Mounting Type: Clamp On Package / Case: DO-200AA, A-PUK Packaging: Tray |
auf Bestellung 4 Stücke: Lieferzeit 10-14 Tag (e) |
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| CY3679 |
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Hersteller: Infineon Technologies
Description: EVAL BOARD FOR CY27410
Packaging: Bulk
Function: Clock Generator
Type: Timing
Utilized IC / Part: CY27410
Supplied Contents: Board(s), Cable(s)
Primary Attributes: USB Powered or External Supply
Part Status: Active
Contents: Board(s), Cable(s)
Secondary Attributes: Graphical User Interface (GUI)
Description: EVAL BOARD FOR CY27410
Packaging: Bulk
Function: Clock Generator
Type: Timing
Utilized IC / Part: CY27410
Supplied Contents: Board(s), Cable(s)
Primary Attributes: USB Powered or External Supply
Part Status: Active
Contents: Board(s), Cable(s)
Secondary Attributes: Graphical User Interface (GUI)
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 1965.05 EUR |
| IKQ120N120CH7XKSA1 |
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Hersteller: Infineon Technologies
Description: IGBT
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 146 ns
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 120A
Supplier Device Package: PG-TO247-3-U01
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 67ns/544ns
Switching Energy: 7.77mJ (on), 2.95mJ (off)
Test Condition: 600V, 120A, 5.6Ohm, 15V
Gate Charge: 834 nC
Part Status: Active
Current - Collector (Ic) (Max): 170 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 480 A
Power - Max: 780 W
Description: IGBT
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 146 ns
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 120A
Supplier Device Package: PG-TO247-3-U01
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 67ns/544ns
Switching Energy: 7.77mJ (on), 2.95mJ (off)
Test Condition: 600V, 120A, 5.6Ohm, 15V
Gate Charge: 834 nC
Part Status: Active
Current - Collector (Ic) (Max): 170 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 480 A
Power - Max: 780 W
auf Bestellung 315 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 22.81 EUR |
| 30+ | 13.67 EUR |
| 120+ | 11.67 EUR |
| FF300R17ME4PBPSA1 |
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Hersteller: Infineon Technologies
Description: IGBT MODULE 1700V 600A MODULE
Input Capacitance (Cies) @ Vce: 24.5 nF @ 25 V
Current - Collector Cutoff (Max): 3 mA
Power - Max: 20 mW
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector (Ic) (Max): 600 A
Part Status: Active
Supplier Device Package: Module
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 300A
Operating Temperature: -40°C ~ 150°C
Configuration: Half Bridge
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
IGBT Type: Trench Field Stop
Description: IGBT MODULE 1700V 600A MODULE
Input Capacitance (Cies) @ Vce: 24.5 nF @ 25 V
Current - Collector Cutoff (Max): 3 mA
Power - Max: 20 mW
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector (Ic) (Max): 600 A
Part Status: Active
Supplier Device Package: Module
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 300A
Operating Temperature: -40°C ~ 150°C
Configuration: Half Bridge
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
IGBT Type: Trench Field Stop
Produkt ist nicht verfügbar
Mindestbestellmenge: 6 Stücke
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| IDW75D65D1XKSA1 |
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Hersteller: Infineon Technologies
Description: DIODE STD 650V 150A PGTO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 108 ns
Technology: Standard
Current - Average Rectified (Io): 150A
Supplier Device Package: PG-TO247-3
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 75 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
Description: DIODE STD 650V 150A PGTO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 108 ns
Technology: Standard
Current - Average Rectified (Io): 150A
Supplier Device Package: PG-TO247-3
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 75 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
auf Bestellung 6495 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 7.96 EUR |
| 30+ | 4.37 EUR |
| 60+ | 3.94 EUR |
| 120+ | 3.58 EUR |
| 510+ | 3 EUR |
| CY8C6347BZI-BLD34 |
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Hersteller: Infineon Technologies
Description: IC MCU 32BIT 1MB FLASH 124VFBGA
Packaging: Tray
Package / Case: 124-VFBGA
Mounting Type: Surface Mount
Speed: 100MHz, 150MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 288K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
Data Converters: A/D 16x10b SAR, 16x12b Sigma-Delta; D/A 2x7b, 1x8/12b
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
Connectivity: FIFO, I2C, IrDA, Microwire, SmartCard, SPI, SSP, UART/USART, USB
Peripherals: Brown-out Detect/Reset, CapSense, DMA, I2S, LCD, LVD, POR, PWM, Temp Sensor, WDT
Supplier Device Package: 124-VFBGA (9x9)
Part Status: Active
Number of I/O: 84
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 1MB FLASH 124VFBGA
Packaging: Tray
Package / Case: 124-VFBGA
Mounting Type: Surface Mount
Speed: 100MHz, 150MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 288K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
Data Converters: A/D 16x10b SAR, 16x12b Sigma-Delta; D/A 2x7b, 1x8/12b
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
Connectivity: FIFO, I2C, IrDA, Microwire, SmartCard, SPI, SSP, UART/USART, USB
Peripherals: Brown-out Detect/Reset, CapSense, DMA, I2S, LCD, LVD, POR, PWM, Temp Sensor, WDT
Supplier Device Package: 124-VFBGA (9x9)
Part Status: Active
Number of I/O: 84
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Mindestbestellmenge: 1300 Stücke
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| CY8C6347BZI-BLD33T |
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Hersteller: Infineon Technologies
Description: IC MCU 32BIT 1MB FLASH 116BGA
Packaging: Tape & Reel (TR)
Package / Case: 116-WFBGA
Mounting Type: Surface Mount
Speed: 100MHz, 150MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 288K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
Data Converters: A/D 16x10b SAR, 16x12b Sigma-Delta; D/A 2x7b, 1x8/12b
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
Connectivity: FIFO, I2C, IrDA, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, DMA, I2S, LCD, LVD, POR, PWM, Temp Sensor, WDT
Supplier Device Package: 116-BGA (5.2x6.4)
Part Status: Active
Number of I/O: 78
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 1MB FLASH 116BGA
Packaging: Tape & Reel (TR)
Package / Case: 116-WFBGA
Mounting Type: Surface Mount
Speed: 100MHz, 150MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 288K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
Data Converters: A/D 16x10b SAR, 16x12b Sigma-Delta; D/A 2x7b, 1x8/12b
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
Connectivity: FIFO, I2C, IrDA, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, DMA, I2S, LCD, LVD, POR, PWM, Temp Sensor, WDT
Supplier Device Package: 116-BGA (5.2x6.4)
Part Status: Active
Number of I/O: 78
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Mindestbestellmenge: 3500 Stücke
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| IRS21171STRPBF |
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Hersteller: Infineon Technologies
Description: IC GATE DRVR HIGH-SIDE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 75ns, 35ns
Channel Type: Single
Driven Configuration: High-Side
Number of Drivers: 1
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
Part Status: Obsolete
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HIGH-SIDE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 75ns, 35ns
Channel Type: Single
Driven Configuration: High-Side
Number of Drivers: 1
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
Part Status: Obsolete
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| AUIRS2117STR |
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Hersteller: Infineon Technologies
Description: IC GATE DRVR HIGH-SIDE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 75ns, 25ns
Channel Type: Single
Driven Configuration: High-Side
Number of Drivers: 1
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 6V, 9.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
Grade: Automotive
Part Status: Not For New Designs
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Description: IC GATE DRVR HIGH-SIDE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 75ns, 25ns
Channel Type: Single
Driven Configuration: High-Side
Number of Drivers: 1
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 6V, 9.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
Grade: Automotive
Part Status: Not For New Designs
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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| AUIRS2118STR |
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Hersteller: Infineon Technologies
Description: IC GATE DRVR HIGH-SIDE 8SOIC
Qualification: AEC-Q100
Grade: Automotive
DigiKey Programmable: Not Verified
Part Status: Not For New Designs
Current - Peak Output (Source, Sink): 290mA, 600mA
Logic Voltage - VIL, VIH: 6V, 9.5V
Gate Type: IGBT, N-Channel MOSFET
Number of Drivers: 1
Driven Configuration: High-Side
Channel Type: Single
Rise / Fall Time (Typ): 75ns, 25ns
Supplier Device Package: 8-SOIC
High Side Voltage - Max (Bootstrap): 600 V
Input Type: Inverting
Voltage - Supply: 10V ~ 20V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Description: IC GATE DRVR HIGH-SIDE 8SOIC
Qualification: AEC-Q100
Grade: Automotive
DigiKey Programmable: Not Verified
Part Status: Not For New Designs
Current - Peak Output (Source, Sink): 290mA, 600mA
Logic Voltage - VIL, VIH: 6V, 9.5V
Gate Type: IGBT, N-Channel MOSFET
Number of Drivers: 1
Driven Configuration: High-Side
Channel Type: Single
Rise / Fall Time (Typ): 75ns, 25ns
Supplier Device Package: 8-SOIC
High Side Voltage - Max (Bootstrap): 600 V
Input Type: Inverting
Voltage - Supply: 10V ~ 20V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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| CG7611AA |
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Hersteller: Infineon Technologies
Description: IC SRAM 36MBIT PARALLEL 165FBGA
DigiKey Programmable: Not Verified
Memory Organization: 1M x 36
Memory Interface: Parallel
Part Status: Active
Supplier Device Package: 165-FBGA (13x15)
Memory Format: SRAM
Clock Frequency: 300 MHz
Technology: SRAM - Synchronous, DDR II
Voltage - Supply: 1.7V ~ 1.9V
Operating Temperature: 0°C ~ 70°C (TA)
Memory Type: Volatile
Memory Size: 36Mbit
Mounting Type: Surface Mount
Package / Case: 165-LBGA
Packaging: Tray
Description: IC SRAM 36MBIT PARALLEL 165FBGA
DigiKey Programmable: Not Verified
Memory Organization: 1M x 36
Memory Interface: Parallel
Part Status: Active
Supplier Device Package: 165-FBGA (13x15)
Memory Format: SRAM
Clock Frequency: 300 MHz
Technology: SRAM - Synchronous, DDR II
Voltage - Supply: 1.7V ~ 1.9V
Operating Temperature: 0°C ~ 70°C (TA)
Memory Type: Volatile
Memory Size: 36Mbit
Mounting Type: Surface Mount
Package / Case: 165-LBGA
Packaging: Tray
auf Bestellung 175 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 32.36 EUR |
| CY7C65214D-32LTXIT |
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Hersteller: Infineon Technologies
Description: USB Full-Speed Peripherals
DigiKey Programmable: Not Verified
Part Status: Active
Supplier Device Package: 32-QFN (5x5)
Standards: USB 2.0
Protocol: USB
Current - Supply: 18mA
Voltage - Supply: 1.71V ~ 1.89V, 2V ~ 3.45V, 3.15V ~ 5.25V, 4.35V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Interface: GPIO, SPI
Function: Bridge
Package / Case: 32-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
Description: USB Full-Speed Peripherals
DigiKey Programmable: Not Verified
Part Status: Active
Supplier Device Package: 32-QFN (5x5)
Standards: USB 2.0
Protocol: USB
Current - Supply: 18mA
Voltage - Supply: 1.71V ~ 1.89V, 2V ~ 3.45V, 3.15V ~ 5.25V, 4.35V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Interface: GPIO, SPI
Function: Bridge
Package / Case: 32-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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| CY8C4045LQI-S412T |
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Hersteller: Infineon Technologies
Description: IC MCU 32BIT 32KB FLASH 32QFN
DigiKey Programmable: Not Verified
Number of I/O: 27
Part Status: Active
Supplier Device Package: 32-QFN (5x5)
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Core Size: 32-Bit Single-Core
Data Converters: A/D 1x10b
Core Processor: ARM® Cortex®-M0+
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 4K x 8
Program Memory Size: 32KB (32K x 8)
Speed: 48MHz
Mounting Type: Surface Mount
Package / Case: 32-UFQFN Exposed Pad
Packaging: Tape & Reel (TR)
Description: IC MCU 32BIT 32KB FLASH 32QFN
DigiKey Programmable: Not Verified
Number of I/O: 27
Part Status: Active
Supplier Device Package: 32-QFN (5x5)
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Core Size: 32-Bit Single-Core
Data Converters: A/D 1x10b
Core Processor: ARM® Cortex®-M0+
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 4K x 8
Program Memory Size: 32KB (32K x 8)
Speed: 48MHz
Mounting Type: Surface Mount
Package / Case: 32-UFQFN Exposed Pad
Packaging: Tape & Reel (TR)
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 3.44 EUR |
| CY8C4045LQI-S412T |
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Hersteller: Infineon Technologies
Description: IC MCU 32BIT 32KB FLASH 32QFN
DigiKey Programmable: Not Verified
Number of I/O: 27
Part Status: Active
Supplier Device Package: 32-QFN (5x5)
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Core Size: 32-Bit Single-Core
Data Converters: A/D 1x10b
Core Processor: ARM® Cortex®-M0+
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 4K x 8
Program Memory Size: 32KB (32K x 8)
Speed: 48MHz
Mounting Type: Surface Mount
Package / Case: 32-UFQFN Exposed Pad
Packaging: Cut Tape (CT)
Description: IC MCU 32BIT 32KB FLASH 32QFN
DigiKey Programmable: Not Verified
Number of I/O: 27
Part Status: Active
Supplier Device Package: 32-QFN (5x5)
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Core Size: 32-Bit Single-Core
Data Converters: A/D 1x10b
Core Processor: ARM® Cortex®-M0+
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 4K x 8
Program Memory Size: 32KB (32K x 8)
Speed: 48MHz
Mounting Type: Surface Mount
Package / Case: 32-UFQFN Exposed Pad
Packaging: Cut Tape (CT)
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 6.87 EUR |
| 10+ | 6.16 EUR |
| 25+ | 5.82 EUR |
| 100+ | 5.05 EUR |
| 250+ | 4.78 EUR |
| 500+ | 4.3 EUR |
| 1000+ | 3.63 EUR |
| IRS2112STRPBF |
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Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 75ns, 35ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 6V, 9.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
Part Status: Active
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HALF-BRIDGE 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 75ns, 35ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 6V, 9.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1000+ | 2.58 EUR |
| IRS2112STRPBF |
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Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 75ns, 35ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 6V, 9.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
Part Status: Active
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HALF-BRIDGE 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 75ns, 35ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 6V, 9.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 2979 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 4.8 EUR |
| 10+ | 3.57 EUR |
| 25+ | 3.26 EUR |
| 100+ | 2.93 EUR |
| 250+ | 2.76 EUR |
| 500+ | 2.69 EUR |
| IKQ75N120CS6XKSA1 |
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Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 1200V 150A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 440 ns
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 75A
Supplier Device Package: PG-TO247-3-46
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 34ns/300ns
Switching Energy: 5.15mJ (on), 2.95mJ (off)
Test Condition: 600V, 75A, 4Ohm, 15V
Gate Charge: 530 nC
Part Status: Active
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 880 W
Description: IGBT TRENCH FS 1200V 150A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 440 ns
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 75A
Supplier Device Package: PG-TO247-3-46
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 34ns/300ns
Switching Energy: 5.15mJ (on), 2.95mJ (off)
Test Condition: 600V, 75A, 4Ohm, 15V
Gate Charge: 530 nC
Part Status: Active
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 880 W
auf Bestellung 1640 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 16.81 EUR |
| 30+ | 9.83 EUR |
| 120+ | 8.29 EUR |
| 510+ | 7.18 EUR |
| 1020+ | 6.97 EUR |
| TLE75080ESDXUMA1 |
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Hersteller: Infineon Technologies
Description: IC PWR DRVR N-CHAN 1:8 TSDSO-24
Packaging: Tape & Reel (TR)
Features: Slew Rate Controlled
Package / Case: 24-TSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 8
Interface: SPI
Switch Type: Relay, Solenoid Driver
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side or Low Side
Rds On (Typ): 1Ohm
Voltage - Load: 3V ~ 28V
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Current - Output (Max): 330mA
Ratio - Input:Output: 1:8
Supplier Device Package: PG-TSDSO-24-21
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
Description: IC PWR DRVR N-CHAN 1:8 TSDSO-24
Packaging: Tape & Reel (TR)
Features: Slew Rate Controlled
Package / Case: 24-TSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 8
Interface: SPI
Switch Type: Relay, Solenoid Driver
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side or Low Side
Rds On (Typ): 1Ohm
Voltage - Load: 3V ~ 28V
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Current - Output (Max): 330mA
Ratio - Input:Output: 1:8
Supplier Device Package: PG-TSDSO-24-21
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 1.95 EUR |
| 6000+ | 1.92 EUR |
| TLE75080ESDXUMA1 |
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Hersteller: Infineon Technologies
Description: IC PWR DRVR N-CHAN 1:8 TSDSO-24
Packaging: Cut Tape (CT)
Features: Slew Rate Controlled
Package / Case: 24-TSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 8
Interface: SPI
Switch Type: Relay, Solenoid Driver
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side or Low Side
Rds On (Typ): 1Ohm
Voltage - Load: 3V ~ 28V
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Current - Output (Max): 330mA
Ratio - Input:Output: 1:8
Supplier Device Package: PG-TSDSO-24-21
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
Description: IC PWR DRVR N-CHAN 1:8 TSDSO-24
Packaging: Cut Tape (CT)
Features: Slew Rate Controlled
Package / Case: 24-TSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 8
Interface: SPI
Switch Type: Relay, Solenoid Driver
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side or Low Side
Rds On (Typ): 1Ohm
Voltage - Load: 3V ~ 28V
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Current - Output (Max): 330mA
Ratio - Input:Output: 1:8
Supplier Device Package: PG-TSDSO-24-21
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 9055 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 6+ | 3.83 EUR |
| 10+ | 2.83 EUR |
| 25+ | 2.58 EUR |
| 100+ | 2.31 EUR |
| 250+ | 2.18 EUR |
| 500+ | 2.11 EUR |
| IKFW90N60EH3XKSA1 |
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Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 600V 77A TO-247-3
Power - Max: 178 W
Current - Collector Pulsed (Icm): 300 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 77 A
Part Status: Active
Gate Charge: 440 nC
Test Condition: 400V, 75A, 5Ohm, 15V
Switching Energy: 2.65mJ (on), 1.3mJ (off)
Td (on/off) @ 25°C: 32ns/210ns
IGBT Type: Trench Field Stop
Supplier Device Package: PG-TO247-3-AI
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 75A
Reverse Recovery Time (trr): 107 ns
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Description: IGBT TRENCH FS 600V 77A TO-247-3
Power - Max: 178 W
Current - Collector Pulsed (Icm): 300 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 77 A
Part Status: Active
Gate Charge: 440 nC
Test Condition: 400V, 75A, 5Ohm, 15V
Switching Energy: 2.65mJ (on), 1.3mJ (off)
Td (on/off) @ 25°C: 32ns/210ns
IGBT Type: Trench Field Stop
Supplier Device Package: PG-TO247-3-AI
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 75A
Reverse Recovery Time (trr): 107 ns
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
auf Bestellung 244 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 24.97 EUR |
| 30+ | 15.05 EUR |
| 120+ | 12.88 EUR |
| IHW40N135R5XKSA1 |
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Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 1350V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 40A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: -/410ns
Switching Energy: 2mJ (off)
Test Condition: 600V, 40A, 10Ohm, 15V
Gate Charge: 305 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 1350 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 394 W
Description: IGBT TRENCH FS 1350V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 40A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: -/410ns
Switching Energy: 2mJ (off)
Test Condition: 600V, 40A, 10Ohm, 15V
Gate Charge: 305 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 1350 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 394 W
auf Bestellung 799 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 9.28 EUR |
| 30+ | 5.18 EUR |
| 120+ | 4.27 EUR |
| 510+ | 3.61 EUR |
| IHW30N160R5XKSA1 |
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Hersteller: Infineon Technologies
Description: IGBT 1600V 60A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 30A
Supplier Device Package: PG-TO247-3
Td (on/off) @ 25°C: -/290ns
Switching Energy: -, 350µJ (off)
Test Condition: 600V, 30A, 10Ohm, 15V
Gate Charge: 205 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 1600 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 263 W
Description: IGBT 1600V 60A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 30A
Supplier Device Package: PG-TO247-3
Td (on/off) @ 25°C: -/290ns
Switching Energy: -, 350µJ (off)
Test Condition: 600V, 30A, 10Ohm, 15V
Gate Charge: 205 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 1600 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 263 W
auf Bestellung 15966 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 9.23 EUR |
| 30+ | 5.15 EUR |
| 120+ | 4.25 EUR |
| 510+ | 3.59 EUR |
| 1020+ | 3.36 EUR |
| 2010+ | 3.15 EUR |
| IHW30N120R5XKSA1 |
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Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 1200V 60A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 30A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: -/330ns
Switching Energy: 1.1mJ (off)
Test Condition: 600V, 30A, 10Ohm, 15V
Gate Charge: 235 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 330 W
Description: IGBT TRENCH FS 1200V 60A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 30A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: -/330ns
Switching Energy: 1.1mJ (off)
Test Condition: 600V, 30A, 10Ohm, 15V
Gate Charge: 235 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 330 W
auf Bestellung 1597 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 7.77 EUR |
| 30+ | 4.28 EUR |
| 120+ | 3.51 EUR |
| 510+ | 2.94 EUR |
| 1020+ | 2.74 EUR |
| S25HL512TDPNHM010 |
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Hersteller: Infineon Technologies
Description: IC FLASH 512MBIT SPI/QUAD 8WSON
Packaging: Tray
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 8-WSON (6x8)
Part Status: Active
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
Description: IC FLASH 512MBIT SPI/QUAD 8WSON
Packaging: Tray
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 8-WSON (6x8)
Part Status: Active
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Mindestbestellmenge: 338 Stücke
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| AUIRFR48ZTRL |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 42A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 37A, 10V
Power Dissipation (Max): 91W (Tc)
Vgs(th) (Max) @ Id: 4V @ 50µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1720 pF @ 25 V
Description: MOSFET N-CH 55V 42A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 37A, 10V
Power Dissipation (Max): 91W (Tc)
Vgs(th) (Max) @ Id: 4V @ 50µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1720 pF @ 25 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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| AUIRFR48Z |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 42A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 37A, 10V
Power Dissipation (Max): 91W (Tc)
Vgs(th) (Max) @ Id: 4V @ 50µA
Supplier Device Package: D-Pak
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1720 pF @ 25 V
Description: MOSFET N-CH 55V 42A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 37A, 10V
Power Dissipation (Max): 91W (Tc)
Vgs(th) (Max) @ Id: 4V @ 50µA
Supplier Device Package: D-Pak
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1720 pF @ 25 V
Produkt ist nicht verfügbar
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| IPB77N06S212ATMA2 |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 77A TO263-3
Input Capacitance (Ciss) (Max) @ Vds: 1770 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: PG-TO263-3-2
Vgs(th) (Max) @ Id: 4V @ 93µA
Power Dissipation (Max): 158W (Tc)
Rds On (Max) @ Id, Vgs: 11.7mOhm @ 38A, 10V
Current - Continuous Drain (Id) @ 25°C: 77A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 55V 77A TO263-3
Input Capacitance (Ciss) (Max) @ Vds: 1770 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: PG-TO263-3-2
Vgs(th) (Max) @ Id: 4V @ 93µA
Power Dissipation (Max): 158W (Tc)
Rds On (Max) @ Id, Vgs: 11.7mOhm @ 38A, 10V
Current - Continuous Drain (Id) @ 25°C: 77A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BTS712204ESPXUMA1 |
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Hersteller: Infineon Technologies
Description: SPOC PG-TSDSO-24
Features: Load Discharge, PWM Input, Slew Rate Controlled, Status Flag
Packaging: Tape & Reel (TR)
Package / Case: 24-TSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 4
Interface: PWM, SPI
Switch Type: Relay, Solenoid Driver
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 9.5mOhm, 22.5mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 28V
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Current - Output (Max): 3A, 3A, 5A, 5A
Ratio - Input:Output: 1:4
Supplier Device Package: PG-TSDSO-24-32
Fault Protection: Current Limiting (Fixed), Over Load, Over Temperature, Over Voltage, Reverse Battery, Short Circuit, UVLO
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
Description: SPOC PG-TSDSO-24
Features: Load Discharge, PWM Input, Slew Rate Controlled, Status Flag
Packaging: Tape & Reel (TR)
Package / Case: 24-TSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 4
Interface: PWM, SPI
Switch Type: Relay, Solenoid Driver
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 9.5mOhm, 22.5mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 28V
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Current - Output (Max): 3A, 3A, 5A, 5A
Ratio - Input:Output: 1:4
Supplier Device Package: PG-TSDSO-24-32
Fault Protection: Current Limiting (Fixed), Over Load, Over Temperature, Over Voltage, Reverse Battery, Short Circuit, UVLO
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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| BTS712204ESPXUMA1 |
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Hersteller: Infineon Technologies
Description: SPOC PG-TSDSO-24
Features: Load Discharge, PWM Input, Slew Rate Controlled, Status Flag
Packaging: Cut Tape (CT)
Package / Case: 24-TSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 4
Interface: PWM, SPI
Switch Type: Relay, Solenoid Driver
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 9.5mOhm, 22.5mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 28V
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Current - Output (Max): 3A, 3A, 5A, 5A
Ratio - Input:Output: 1:4
Supplier Device Package: PG-TSDSO-24-32
Fault Protection: Current Limiting (Fixed), Over Load, Over Temperature, Over Voltage, Reverse Battery, Short Circuit, UVLO
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
Description: SPOC PG-TSDSO-24
Features: Load Discharge, PWM Input, Slew Rate Controlled, Status Flag
Packaging: Cut Tape (CT)
Package / Case: 24-TSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 4
Interface: PWM, SPI
Switch Type: Relay, Solenoid Driver
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 9.5mOhm, 22.5mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 28V
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Current - Output (Max): 3A, 3A, 5A, 5A
Ratio - Input:Output: 1:4
Supplier Device Package: PG-TSDSO-24-32
Fault Protection: Current Limiting (Fixed), Over Load, Over Temperature, Over Voltage, Reverse Battery, Short Circuit, UVLO
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
auf Bestellung 1425 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 6.76 EUR |
| 10+ | 5.09 EUR |
| 25+ | 4.68 EUR |
| 100+ | 4.22 EUR |
| 250+ | 4 EUR |
| 500+ | 3.97 EUR |
| BTS70802EPZXUMA1 |
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Hersteller: Infineon Technologies
Description: PROFET PG-TSDSO-14
Features: Slew Rate Controlled
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 175°C (TJ)
Output Configuration: High Side
Rds On (Typ): 20.9mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 18V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TDSO-14-11
Fault Protection: Over Current, Over Temperature, Over Voltage, Short Circuit
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
Description: PROFET PG-TSDSO-14
Features: Slew Rate Controlled
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 175°C (TJ)
Output Configuration: High Side
Rds On (Typ): 20.9mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 18V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TDSO-14-11
Fault Protection: Over Current, Over Temperature, Over Voltage, Short Circuit
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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| BTS70802EPZXUMA1 |
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Hersteller: Infineon Technologies
Description: PROFET PG-TSDSO-14
Features: Slew Rate Controlled
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 175°C (TJ)
Output Configuration: High Side
Rds On (Typ): 20.9mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 18V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TDSO-14-11
Fault Protection: Over Current, Over Temperature, Over Voltage, Short Circuit
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
Description: PROFET PG-TSDSO-14
Features: Slew Rate Controlled
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 175°C (TJ)
Output Configuration: High Side
Rds On (Typ): 20.9mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 18V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TDSO-14-11
Fault Protection: Over Current, Over Temperature, Over Voltage, Short Circuit
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
auf Bestellung 1810 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 8+ | 2.81 EUR |
| 11+ | 2.06 EUR |
| 25+ | 1.87 EUR |
| 100+ | 1.67 EUR |
| 250+ | 1.56 EUR |
| 500+ | 1.5 EUR |
| 1000+ | 1.49 EUR |
| BTS70081EPZXUMA1 |
![]() |
Hersteller: Infineon Technologies
Description: PROFET PG-TSDSO-14
Features: Slew Rate Controlled
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 175°C (TJ)
Output Configuration: High Side
Rds On (Typ): 9mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 18V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 10A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TDSO-14-11
Fault Protection: Over Current, Over Temperature, Over Voltage, Short Circuit
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
Description: PROFET PG-TSDSO-14
Features: Slew Rate Controlled
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 175°C (TJ)
Output Configuration: High Side
Rds On (Typ): 9mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 18V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 10A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TDSO-14-11
Fault Protection: Over Current, Over Temperature, Over Voltage, Short Circuit
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
auf Bestellung 5315 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 7+ | 3.42 EUR |
| 10+ | 2.51 EUR |
| 25+ | 2.28 EUR |
| 100+ | 2.03 EUR |
| 250+ | 1.92 EUR |
| 500+ | 1.84 EUR |
| TC1791F512F240EPABKXUMA2 |
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Hersteller: Infineon Technologies
Description: IC MCU 32BIT 4MB FLASH 292LFBGA
Packaging: Tape & Reel (TR)
Package / Case: 292-LFBGA
Mounting Type: Surface Mount
Speed: 240MHz
Program Memory Size: 4MB (4M x 8)
RAM Size: 288K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 192K x 8
Core Processor: TriCore™
Data Converters: A/D 8x10b, 44x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.17V ~ 3.63V
Connectivity: ASC, CANbus, FlexRay, MLI, MSC, SSC
Peripherals: DMA, POR, WDT
Supplier Device Package: PG-LFBGA-292-6
Part Status: Active
Number of I/O: 128
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 4MB FLASH 292LFBGA
Packaging: Tape & Reel (TR)
Package / Case: 292-LFBGA
Mounting Type: Surface Mount
Speed: 240MHz
Program Memory Size: 4MB (4M x 8)
RAM Size: 288K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 192K x 8
Core Processor: TriCore™
Data Converters: A/D 8x10b, 44x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.17V ~ 3.63V
Connectivity: ASC, CANbus, FlexRay, MLI, MSC, SSC
Peripherals: DMA, POR, WDT
Supplier Device Package: PG-LFBGA-292-6
Part Status: Active
Number of I/O: 128
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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| CY9AF004BGL-G107MJK1ERE1 |
Hersteller: Infineon Technologies
Description: MM MCU
Packaging: Tape & Reel (TR)
Part Status: Active
DigiKey Programmable: Not Verified
Description: MM MCU
Packaging: Tape & Reel (TR)
Part Status: Active
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
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| IRFR4620PBF |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 200V 24A D-PAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 78mOhm @ 15A, 10V
Power Dissipation (Max): 144W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1710 pF @ 50 V
Description: MOSFET N-CH 200V 24A D-PAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 78mOhm @ 15A, 10V
Power Dissipation (Max): 144W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1710 pF @ 50 V
Produkt ist nicht verfügbar
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| AUIRLR120N |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 10A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 185mOhm @ 6A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 100V 10A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 185mOhm @ 6A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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| BCR135E6433HTMA1 |
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Hersteller: Infineon Technologies
Description: TRANS PREBIAS NPN 50V SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Supplier Device Package: PG-SOT23
Part Status: Discontinued at Digi-Key
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 150 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Grade: Automotive
Qualification: AEC-Q101
Resistors Included: R1 and R2
Description: TRANS PREBIAS NPN 50V SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Supplier Device Package: PG-SOT23
Part Status: Discontinued at Digi-Key
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 150 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Grade: Automotive
Qualification: AEC-Q101
Resistors Included: R1 and R2
Produkt ist nicht verfügbar
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| MB91F467DBPFVS-GS-N2K5E2 |
Hersteller: Infineon Technologies
Description: IC MCU 32B 1.0625MB FLASH 208QFP
DigiKey Programmable: Not Verified
Number of I/O: 170
Part Status: Discontinued at Digi-Key
Supplier Device Package: 208-QFP (28x28)
Peripherals: DMA, LVD, PWM, WDT
Connectivity: CANbus, EBI/EMI, I2C, LINbus, UART/USART
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Core Size: 32-Bit Single-Core
Data Converters: A/D 24x10b
Core Processor: FR60 RISC
Program Memory Type: FLASH
Oscillator Type: External
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 72K x 8
Program Memory Size: 1.0625MB (1.0625M x 8)
Speed: 96MHz
Mounting Type: Surface Mount
Package / Case: 208-BQFP
Packaging: Tray
Description: IC MCU 32B 1.0625MB FLASH 208QFP
DigiKey Programmable: Not Verified
Number of I/O: 170
Part Status: Discontinued at Digi-Key
Supplier Device Package: 208-QFP (28x28)
Peripherals: DMA, LVD, PWM, WDT
Connectivity: CANbus, EBI/EMI, I2C, LINbus, UART/USART
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Core Size: 32-Bit Single-Core
Data Converters: A/D 24x10b
Core Processor: FR60 RISC
Program Memory Type: FLASH
Oscillator Type: External
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 72K x 8
Program Memory Size: 1.0625MB (1.0625M x 8)
Speed: 96MHz
Mounting Type: Surface Mount
Package / Case: 208-BQFP
Packaging: Tray
Produkt ist nicht verfügbar
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| MB91F467DBPFVS-GSK5E2 |
Hersteller: Infineon Technologies
Description: IC AUTO MCU 208HQFP
DigiKey Programmable: Not Verified
Number of I/O: 170
Part Status: Obsolete
Supplier Device Package: 208-QFP (28x28)
Peripherals: DMA, LVD, PWM, WDT
Connectivity: CANbus, EBI/EMI, I²C, LINbus, UART/USART
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Core Size: 32-Bit Single-Core
Data Converters: A/D 24x10b
Core Processor: FR60 RISC
Program Memory Type: FLASH
Oscillator Type: External
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 72K x 8
Program Memory Size: 1.0625MB (1.0625M x 8)
Speed: 96MHz
Mounting Type: Surface Mount
Package / Case: 208-BQFP
Packaging: Tray
Description: IC AUTO MCU 208HQFP
DigiKey Programmable: Not Verified
Number of I/O: 170
Part Status: Obsolete
Supplier Device Package: 208-QFP (28x28)
Peripherals: DMA, LVD, PWM, WDT
Connectivity: CANbus, EBI/EMI, I²C, LINbus, UART/USART
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Core Size: 32-Bit Single-Core
Data Converters: A/D 24x10b
Core Processor: FR60 RISC
Program Memory Type: FLASH
Oscillator Type: External
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 72K x 8
Program Memory Size: 1.0625MB (1.0625M x 8)
Speed: 96MHz
Mounting Type: Surface Mount
Package / Case: 208-BQFP
Packaging: Tray
Produkt ist nicht verfügbar
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| CY91F467DBPFVS-GS-UJE2 |
Hersteller: Infineon Technologies
Description: IC MCU 32B 1.0625MB FLASH 208QFP
DigiKey Programmable: Not Verified
Number of I/O: 170
Part Status: Obsolete
Supplier Device Package: 208-QFP (28x28)
Peripherals: DMA, LVD, PWM, WDT
Connectivity: CANbus, EBI/EMI, I2C, LINbus, UART/USART
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Core Size: 32-Bit Single-Core
Data Converters: A/D 24x10b
Core Processor: FR60 RISC
Program Memory Type: FLASH
Oscillator Type: External
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 72K x 8
Program Memory Size: 1.0625MB (1.0625M x 8)
Speed: 96MHz
Mounting Type: Surface Mount
Package / Case: 208-BQFP
Packaging: Tray
Description: IC MCU 32B 1.0625MB FLASH 208QFP
DigiKey Programmable: Not Verified
Number of I/O: 170
Part Status: Obsolete
Supplier Device Package: 208-QFP (28x28)
Peripherals: DMA, LVD, PWM, WDT
Connectivity: CANbus, EBI/EMI, I2C, LINbus, UART/USART
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Core Size: 32-Bit Single-Core
Data Converters: A/D 24x10b
Core Processor: FR60 RISC
Program Memory Type: FLASH
Oscillator Type: External
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 72K x 8
Program Memory Size: 1.0625MB (1.0625M x 8)
Speed: 96MHz
Mounting Type: Surface Mount
Package / Case: 208-BQFP
Packaging: Tray
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| BGSX24MU16E6327XUSA1 |
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Hersteller: Infineon Technologies
Description: IC RF SWITCH DP4T 5GHZ ULGA16-1
Packaging: Cut Tape (CT)
Package / Case: 16-UFLGA Exposed Pad
Impedance: 50Ohm
Mounting Type: Surface Mount
Circuit: DP4T
RF Type: GSM, LTE, W-CDMA
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.4V
Insertion Loss: 1dB
Frequency Range: 100MHz ~ 5GHz
Test Frequency: 5GHz
Isolation: 34dB
Supplier Device Package: PG-ULGA-16-1
IIP3: 77dBm
Part Status: Active
Description: IC RF SWITCH DP4T 5GHZ ULGA16-1
Packaging: Cut Tape (CT)
Package / Case: 16-UFLGA Exposed Pad
Impedance: 50Ohm
Mounting Type: Surface Mount
Circuit: DP4T
RF Type: GSM, LTE, W-CDMA
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.4V
Insertion Loss: 1dB
Frequency Range: 100MHz ~ 5GHz
Test Frequency: 5GHz
Isolation: 34dB
Supplier Device Package: PG-ULGA-16-1
IIP3: 77dBm
Part Status: Active
auf Bestellung 4282 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 10+ | 2.23 EUR |
| 14+ | 1.61 EUR |
| 25+ | 1.45 EUR |
| 100+ | 1.29 EUR |
| 250+ | 1.2 EUR |
| 500+ | 1.15 EUR |
| 1000+ | 1.12 EUR |
| BGSX33M5U16E6327XTSA1 |
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Hersteller: Infineon Technologies
Description: IC RF SWITCH 3P3T 7.125GHZ
Part Status: Active
Isolation: 33dB
Test Frequency: 5.925GHz ~ 7.125GHz
Frequency Range: 600MHz ~ 7.125GHz
Insertion Loss: 1.02dB
Voltage - Supply: 1.65V ~ 1.95V
Operating Temperature: -40°C ~ 85°C (TA)
RF Type: 5G, GSM, LTE, WCDMA
Circuit: 3P3T
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
Description: IC RF SWITCH 3P3T 7.125GHZ
Part Status: Active
Isolation: 33dB
Test Frequency: 5.925GHz ~ 7.125GHz
Frequency Range: 600MHz ~ 7.125GHz
Insertion Loss: 1.02dB
Voltage - Supply: 1.65V ~ 1.95V
Operating Temperature: -40°C ~ 85°C (TA)
RF Type: 5G, GSM, LTE, WCDMA
Circuit: 3P3T
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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| BGSX33M5U16E6327XTSA1 |
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Hersteller: Infineon Technologies
Description: IC RF SWITCH 3P3T 7.125GHZ
Part Status: Active
Isolation: 33dB
Test Frequency: 5.925GHz ~ 7.125GHz
Frequency Range: 600MHz ~ 7.125GHz
Insertion Loss: 1.02dB
Voltage - Supply: 1.65V ~ 1.95V
Operating Temperature: -40°C ~ 85°C (TA)
RF Type: 5G, GSM, LTE, WCDMA
Circuit: 3P3T
Mounting Type: Surface Mount
Packaging: Cut Tape (CT)
Description: IC RF SWITCH 3P3T 7.125GHZ
Part Status: Active
Isolation: 33dB
Test Frequency: 5.925GHz ~ 7.125GHz
Frequency Range: 600MHz ~ 7.125GHz
Insertion Loss: 1.02dB
Voltage - Supply: 1.65V ~ 1.95V
Operating Temperature: -40°C ~ 85°C (TA)
RF Type: 5G, GSM, LTE, WCDMA
Circuit: 3P3T
Mounting Type: Surface Mount
Packaging: Cut Tape (CT)
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| PASCO2V01XUMA1 |
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Hersteller: Infineon Technologies
Description: SENSOR CARBON DIOXIDE I2C OUTPUT
Part Status: Discontinued at Digi-Key
Current - Supply: 800µA, 6.1mA
Voltage - Supply: 3V ~ 3.6V, 10.8V ~ 13.2V
Operating Temperature: 0°C ~ 50°C
Type: Carbon Dioxide (CO2)
Output: I2C, PWM, UART
Packaging: Tape & Reel (TR)
Description: SENSOR CARBON DIOXIDE I2C OUTPUT
Part Status: Discontinued at Digi-Key
Current - Supply: 800µA, 6.1mA
Voltage - Supply: 3V ~ 3.6V, 10.8V ~ 13.2V
Operating Temperature: 0°C ~ 50°C
Type: Carbon Dioxide (CO2)
Output: I2C, PWM, UART
Packaging: Tape & Reel (TR)
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| S6J351CHTBSC20000 |
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Hersteller: Infineon Technologies
Description: TRAVEO-40NM
Number of I/O: 94
Part Status: Active
Supplier Device Package: 144-TEQFP (16x16)
Peripherals: DMA, I2S, LCD, LVD, POR, PWM, WDT
Connectivity: CANbus, CSIO, I2C, LINbus, UART/USART
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit
Data Converters: A/D 40x12b
Core Processor: Arm® Cortex®-R5F
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 256K x 8
Speed: 132MHz
Mounting Type: Surface Mount
Package / Case: 144-LQFP Exposed Pad
Packaging: Tray
Program Memory Size: 2.112M x 8
Description: TRAVEO-40NM
Number of I/O: 94
Part Status: Active
Supplier Device Package: 144-TEQFP (16x16)
Peripherals: DMA, I2S, LCD, LVD, POR, PWM, WDT
Connectivity: CANbus, CSIO, I2C, LINbus, UART/USART
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit
Data Converters: A/D 40x12b
Core Processor: Arm® Cortex®-R5F
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 256K x 8
Speed: 132MHz
Mounting Type: Surface Mount
Package / Case: 144-LQFP Exposed Pad
Packaging: Tray
Program Memory Size: 2.112M x 8
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| S6J3429HUBSV20000 |
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Hersteller: Infineon Technologies
Description: TRAVEO-40NM
Packaging: Tray
Package / Case: 144-LQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 832KB (832K x 8)
RAM Size: 92K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 112K x 8
Core Processor: Arm® Cortex®-R5F
Data Converters: A/D 56x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: CANbus, CSIO, I2C, LINbus, SPI, UART/USART
Peripherals: DMA, POR, PWM, WDT
Supplier Device Package: 144-LQFP (20x20)
Part Status: Active
Number of I/O: 144
Description: TRAVEO-40NM
Packaging: Tray
Package / Case: 144-LQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 832KB (832K x 8)
RAM Size: 92K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 112K x 8
Core Processor: Arm® Cortex®-R5F
Data Converters: A/D 56x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: CANbus, CSIO, I2C, LINbus, SPI, UART/USART
Peripherals: DMA, POR, PWM, WDT
Supplier Device Package: 144-LQFP (20x20)
Part Status: Active
Number of I/O: 144
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| S6J3429HVBSV20000 |
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Hersteller: Infineon Technologies
Description: TRAVEO-40NM
Packaging: Tray
Package / Case: 144-LQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 832KB (832K x 8)
RAM Size: 92K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 112K x 8
Core Processor: Arm® Cortex®-R5F
Data Converters: A/D 56x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: CANbus, CSIO, I2C, LINbus, SPI, UART/USART
Peripherals: DMA, POR, PWM, WDT
Supplier Device Package: 144-LQFP (20x20)
Part Status: Active
Number of I/O: 144
Description: TRAVEO-40NM
Packaging: Tray
Package / Case: 144-LQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 832KB (832K x 8)
RAM Size: 92K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 112K x 8
Core Processor: Arm® Cortex®-R5F
Data Converters: A/D 56x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: CANbus, CSIO, I2C, LINbus, SPI, UART/USART
Peripherals: DMA, POR, PWM, WDT
Supplier Device Package: 144-LQFP (20x20)
Part Status: Active
Number of I/O: 144
Produkt ist nicht verfügbar
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| IPB180N03S4L01ATMA1 |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 180A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 1.05mOhm @ 100A, 10V
Power Dissipation (Max): 188W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 140µA
Supplier Device Package: PG-TO263-7-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 239 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 17600 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 30V 180A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 1.05mOhm @ 100A, 10V
Power Dissipation (Max): 188W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 140µA
Supplier Device Package: PG-TO263-7-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 239 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 17600 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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| IPB180N03S4L01ATMA1 |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 180A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 1.05mOhm @ 100A, 10V
Power Dissipation (Max): 188W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 140µA
Supplier Device Package: PG-TO263-7-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 239 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 17600 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 30V 180A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 1.05mOhm @ 100A, 10V
Power Dissipation (Max): 188W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 140µA
Supplier Device Package: PG-TO263-7-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 239 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 17600 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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| IPP80N04S4L04AKSA1 |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 80A TO220-3-1
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 80A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 35µA
Supplier Device Package: PG-TO220-3-1
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4690 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 40V 80A TO220-3-1
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 80A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 35µA
Supplier Device Package: PG-TO220-3-1
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4690 pF @ 25 V
Qualification: AEC-Q101
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| IPB80N04S204ATMA2 |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 80A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PG-TO263-3-2
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 40V 80A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PG-TO263-3-2
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1000+ | 2.87 EUR |
| IPB80N04S204ATMA2 |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 80A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PG-TO263-3-2
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 40V 80A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PG-TO263-3-2
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 6388 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 8.04 EUR |
| 10+ | 5.3 EUR |
| 100+ | 3.74 EUR |
| 500+ | 3.07 EUR |
| CY8C4128LQI-BL553 |
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Hersteller: Infineon Technologies
Description: IC RF TXRX+MCU BLE 56QFN
Packaging: Tray
Package / Case: 56-UFQFN Exposed Pad
Sensitivity: -91dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 256kB Flash, 8kB ROM, 32kB SRAM
Type: TxRx + MCU
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.71V ~ 5.5V
Power - Output: 3dBm
Protocol: Bluetooth v4.2
Current - Receiving: 16.4mA ~ 21.5mA
Data Rate (Max): 8Mbps
Current - Transmitting: 12.5mA ~ 20mA
Supplier Device Package: 56-QFN (7x7)
GPIO: 36
Modulation: GFSK
RF Family/Standard: Bluetooth
Serial Interfaces: I2C, SPI, UART
Part Status: Active
DigiKey Programmable: Not Verified
Description: IC RF TXRX+MCU BLE 56QFN
Packaging: Tray
Package / Case: 56-UFQFN Exposed Pad
Sensitivity: -91dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 256kB Flash, 8kB ROM, 32kB SRAM
Type: TxRx + MCU
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.71V ~ 5.5V
Power - Output: 3dBm
Protocol: Bluetooth v4.2
Current - Receiving: 16.4mA ~ 21.5mA
Data Rate (Max): 8Mbps
Current - Transmitting: 12.5mA ~ 20mA
Supplier Device Package: 56-QFN (7x7)
GPIO: 36
Modulation: GFSK
RF Family/Standard: Bluetooth
Serial Interfaces: I2C, SPI, UART
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 1300 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 13.95 EUR |
| 10+ | 10.77 EUR |
| 25+ | 9.98 EUR |
| 100+ | 9.12 EUR |
| 260+ | 8.68 EUR |
| 520+ | 8.43 EUR |
| 1040+ | 8.22 EUR |
| MB89925PF-G-166-BNDE1 |
Hersteller: Infineon Technologies
Description: IC MCU 8BIT 16KB MROM 80PQFP
DigiKey Programmable: Not Verified
Number of I/O: 69
Part Status: Obsolete
Supplier Device Package: 80-QFP (14x20)
Peripherals: LCD, LVD, POR, PWM, WDT
Connectivity: Serial I/O, UART/USART
Voltage - Supply (Vcc/Vdd): 2.2V ~ 6V
Core Size: 8-Bit
Data Converters: A/D 8x10b
Core Processor: F²MC-8L
Program Memory Type: Mask ROM
Oscillator Type: External
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 512 x 8
Program Memory Size: 16KB (16K x 8)
Speed: 8MHz
Mounting Type: Surface Mount
Package / Case: 80-BQFP
Packaging: Tray
Description: IC MCU 8BIT 16KB MROM 80PQFP
DigiKey Programmable: Not Verified
Number of I/O: 69
Part Status: Obsolete
Supplier Device Package: 80-QFP (14x20)
Peripherals: LCD, LVD, POR, PWM, WDT
Connectivity: Serial I/O, UART/USART
Voltage - Supply (Vcc/Vdd): 2.2V ~ 6V
Core Size: 8-Bit
Data Converters: A/D 8x10b
Core Processor: F²MC-8L
Program Memory Type: Mask ROM
Oscillator Type: External
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 512 x 8
Program Memory Size: 16KB (16K x 8)
Speed: 8MHz
Mounting Type: Surface Mount
Package / Case: 80-BQFP
Packaging: Tray
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| CY8C21534B-24PVXIT |
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Hersteller: Infineon Technologies
Description: IC MCU 8BIT 8KB FLASH 28SSOP
Packaging: Tape & Reel (TR)
Package / Case: 28-SSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Data Converters: A/D 28x8b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.25V
Connectivity: I2C, SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 28-SSOP
Part Status: Active
Number of I/O: 24
DigiKey Programmable: Not Verified
Description: IC MCU 8BIT 8KB FLASH 28SSOP
Packaging: Tape & Reel (TR)
Package / Case: 28-SSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Data Converters: A/D 28x8b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.25V
Connectivity: I2C, SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 28-SSOP
Part Status: Active
Number of I/O: 24
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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| CY7C1353G-100AXC |
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Hersteller: Infineon Technologies
Description: IC SRAM 4.5MBIT PAR 100TQFP
Memory Organization: 256K x 18
Access Time: 8 ns
Memory Interface: Parallel
Part Status: Active
Supplier Device Package: 100-TQFP (14x20)
Memory Format: SRAM
Clock Frequency: 100 MHz
Technology: SRAM - Synchronous, SDR
Voltage - Supply: 3.135V ~ 3.465V
Operating Temperature: 0°C ~ 70°C (TA)
Memory Type: Volatile
Memory Size: 4.5Mbit
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Packaging: Tray
DigiKey Programmable: Not Verified
Description: IC SRAM 4.5MBIT PAR 100TQFP
Memory Organization: 256K x 18
Access Time: 8 ns
Memory Interface: Parallel
Part Status: Active
Supplier Device Package: 100-TQFP (14x20)
Memory Format: SRAM
Clock Frequency: 100 MHz
Technology: SRAM - Synchronous, SDR
Voltage - Supply: 3.135V ~ 3.465V
Operating Temperature: 0°C ~ 70°C (TA)
Memory Type: Volatile
Memory Size: 4.5Mbit
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Packaging: Tray
DigiKey Programmable: Not Verified
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| CY7C1041CV33-10BAJXET |
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Hersteller: Infineon Technologies
Description: IC SRAM 4MBIT PARALLEL 48FBGA
DigiKey Programmable: Not Verified
Memory Organization: 256K x 16
Access Time: 10 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 10ns
Part Status: Discontinued at Digi-Key
Supplier Device Package: 48-FBGA (7x8.5)
Memory Format: SRAM
Technology: SRAM - Asynchronous
Voltage - Supply: 3V ~ 3.6V
Operating Temperature: -40°C ~ 125°C (TA)
Memory Type: Volatile
Memory Size: 4Mbit
Mounting Type: Surface Mount
Package / Case: 48-TFBGA
Packaging: Tape & Reel (TR)
Description: IC SRAM 4MBIT PARALLEL 48FBGA
DigiKey Programmable: Not Verified
Memory Organization: 256K x 16
Access Time: 10 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 10ns
Part Status: Discontinued at Digi-Key
Supplier Device Package: 48-FBGA (7x8.5)
Memory Format: SRAM
Technology: SRAM - Asynchronous
Voltage - Supply: 3V ~ 3.6V
Operating Temperature: -40°C ~ 125°C (TA)
Memory Type: Volatile
Memory Size: 4Mbit
Mounting Type: Surface Mount
Package / Case: 48-TFBGA
Packaging: Tape & Reel (TR)
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| MB39A136PFT-G-BND-ERE1 |
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Hersteller: Infineon Technologies
Description: IC REG CTRLR BUCK 24TSSOP
Number of Outputs: 2
Part Status: Obsolete
Clock Sync: No
Duty Cycle (Max): 80%
Output Phases: 2
Control Features: Current Limit, Soft Start
Synchronous Rectifier: Yes
Supplier Device Package: 24-TSSOP
Voltage - Supply (Vcc/Vdd): 4.5V ~ 25V
Topology: Buck
Frequency - Switching: 500kHz
Output Configuration: Positive
Operating Temperature: -30°C ~ 85°C (TA)
Function: Step-Down
Mounting Type: Surface Mount
Output Type: Transistor Driver
Package / Case: 24-TFSOP (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
Description: IC REG CTRLR BUCK 24TSSOP
Number of Outputs: 2
Part Status: Obsolete
Clock Sync: No
Duty Cycle (Max): 80%
Output Phases: 2
Control Features: Current Limit, Soft Start
Synchronous Rectifier: Yes
Supplier Device Package: 24-TSSOP
Voltage - Supply (Vcc/Vdd): 4.5V ~ 25V
Topology: Buck
Frequency - Switching: 500kHz
Output Configuration: Positive
Operating Temperature: -30°C ~ 85°C (TA)
Function: Step-Down
Mounting Type: Surface Mount
Output Type: Transistor Driver
Package / Case: 24-TFSOP (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
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| MB39A136PFT-G-BND-ERE1 |
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Hersteller: Infineon Technologies
Description: IC REG CTRLR BUCK 24TSSOP
Number of Outputs: 2
Part Status: Obsolete
Clock Sync: No
Duty Cycle (Max): 80%
Output Phases: 2
Control Features: Current Limit, Soft Start
Synchronous Rectifier: Yes
Supplier Device Package: 24-TSSOP
Voltage - Supply (Vcc/Vdd): 4.5V ~ 25V
Topology: Buck
Frequency - Switching: 500kHz
Output Configuration: Positive
Operating Temperature: -30°C ~ 85°C (TA)
Mounting Type: Surface Mount
Output Type: Transistor Driver
Package / Case: 24-TFSOP (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
Function: Step-Down
Description: IC REG CTRLR BUCK 24TSSOP
Number of Outputs: 2
Part Status: Obsolete
Clock Sync: No
Duty Cycle (Max): 80%
Output Phases: 2
Control Features: Current Limit, Soft Start
Synchronous Rectifier: Yes
Supplier Device Package: 24-TSSOP
Voltage - Supply (Vcc/Vdd): 4.5V ~ 25V
Topology: Buck
Frequency - Switching: 500kHz
Output Configuration: Positive
Operating Temperature: -30°C ~ 85°C (TA)
Mounting Type: Surface Mount
Output Type: Transistor Driver
Package / Case: 24-TFSOP (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
Function: Step-Down
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| T590N16TOFXPSA1 |
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Hersteller: Infineon Technologies
Description: SCR MODULE 1.8KV 1250A DO-200AB
Voltage - Off State: 1.8 kV
Current - On State (It (RMS)) (Max): 1250 A
Part Status: Active
Voltage - Gate Trigger (Vgt) (Max): 2.2 V
Current - On State (It (AV)) (Max): 590 A
Number of SCRs, Diodes: 1 SCR
Current - Non Rep. Surge 50, 60Hz (Itsm): 9400A @ 50Hz
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Hold (Ih) (Max): 300 mA
Structure: Single
Operating Temperature: -40°C ~ 125°C
Mounting Type: Clamp On
Package / Case: DO-200AB, B-PUK
Packaging: Tray
Description: SCR MODULE 1.8KV 1250A DO-200AB
Voltage - Off State: 1.8 kV
Current - On State (It (RMS)) (Max): 1250 A
Part Status: Active
Voltage - Gate Trigger (Vgt) (Max): 2.2 V
Current - On State (It (AV)) (Max): 590 A
Number of SCRs, Diodes: 1 SCR
Current - Non Rep. Surge 50, 60Hz (Itsm): 9400A @ 50Hz
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Hold (Ih) (Max): 300 mA
Structure: Single
Operating Temperature: -40°C ~ 125°C
Mounting Type: Clamp On
Package / Case: DO-200AB, B-PUK
Packaging: Tray
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| T640N16TOFXPSA1 |
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Hersteller: Infineon Technologies
Description: SCR MODULE 1.8KV 1250A DO-200AB
Voltage - Off State: 1.8 kV
Current - On State (It (RMS)) (Max): 1250 A
Part Status: Active
Voltage - Gate Trigger (Vgt) (Max): 2.2 V
Current - On State (It (AV)) (Max): 644 A
Number of SCRs, Diodes: 1 SCR
Current - Non Rep. Surge 50, 60Hz (Itsm): 9400A @ 50Hz
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Hold (Ih) (Max): 300 mA
Structure: Single
Operating Temperature: -40°C ~ 125°C
Mounting Type: Clamp On
Package / Case: DO-200AA, A-PUK
Packaging: Tray
Description: SCR MODULE 1.8KV 1250A DO-200AB
Voltage - Off State: 1.8 kV
Current - On State (It (RMS)) (Max): 1250 A
Part Status: Active
Voltage - Gate Trigger (Vgt) (Max): 2.2 V
Current - On State (It (AV)) (Max): 644 A
Number of SCRs, Diodes: 1 SCR
Current - Non Rep. Surge 50, 60Hz (Itsm): 9400A @ 50Hz
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Hold (Ih) (Max): 300 mA
Structure: Single
Operating Temperature: -40°C ~ 125°C
Mounting Type: Clamp On
Package / Case: DO-200AA, A-PUK
Packaging: Tray
auf Bestellung 4 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 238.76 EUR |





































