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TLV49642MXTMA1 Infineon Technologies fundamentals-of-power-semiconductors Description: MAG SWITCH IC HALL EFF SOT23-3
Packaging: Tape & Reel (TR)
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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FF300R07ME4BOSA1 FF300R07ME4BOSA1 Infineon Technologies Infineon-FF300R07ME4-DataSheet-v03_00-EN.pdf?fileId=5546d4626e651a41016e7e1956c9107b Description: IGBT MOD 650V 300A AG-ECONOD-3
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 300A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONOD-3
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 300 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 18.5 nF @ 25 V
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FF450R07ME4BOSA1 FF450R07ME4BOSA1 Infineon Technologies Infineon-FF450R07ME4-DataSheet-v03_00-EN.pdf?fileId=5546d4626e651a41016e7e227bfd1087 Description: IGBT MOD 650V 450A AG-ECONOD-3
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 450A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONOD-3
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 450 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 27.5 nF @ 25 V
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FD400R07PE4RB6BOSA1 Infineon Technologies Infineon-FD400R07PE4R_B6-DS-v03_00-en_de.pdf?fileId=db3a30433a047ba0013a6e432c415fb4 Description: IGBT MOD 650V 460A 1150W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 400A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 460 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 1150 W
Current - Collector Cutoff (Max): 20 µA
Input Capacitance (Cies) @ Vce: 18.5 nF @ 25 V
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FP100R07N3E4BOSA1 FP100R07N3E4BOSA1 Infineon Technologies Infineon-FP100R07N3E4-DS-v02_01-en_de.pdf?fileId=db3a3043324cae8c013262bbe5453970 Description: IGBT MOD 650V 100A 335W MOD
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 335 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 6.2 nF @ 25 V
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CY7C1327G-133AXIT CY7C1327G-133AXIT Infineon Technologies Infineon-CY7C1327G_4-Mbit_(256_K_18)_Pipelined_Sync_SRAM-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec41d4b3988 Description: IC SRAM 4.5MBIT PAR 100TQFP
Access Time: 4 ns
Memory Interface: Parallel
Supplier Device Package: 100-TQFP (14x20)
Memory Format: SRAM
Clock Frequency: 133 MHz
Technology: SRAM - Synchronous, SDR
Voltage - Supply: 3.15V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Volatile
Memory Size: 4.5Mbit
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Memory Organization: 256K x 18
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D255N04BXPSA1 D255N04BXPSA1 Infineon Technologies D255N.pdf Description: DIODE GEN PURP 400V 255A
Packaging: Bulk
Package / Case: DO-205AA, DO-8, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 255A
Operating Temperature - Junction: -40°C ~ 180°C
Voltage - DC Reverse (Vr) (Max): 400 V
Current - Reverse Leakage @ Vr: 20 mA @ 400 V
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BC848BWH6327XTSA1 BC848BWH6327XTSA1 Infineon Technologies bc846%2Cbc847%2Cbc848%2Cbc849%2Cbc850.pdf Description: TRANS NPN 30V 0.1A PG-SOT323
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT323
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 250 mW
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BC848BE6327HTSA1 BC848BE6327HTSA1 Infineon Technologies bc846%2Cbc847%2Cbc848%2Cbc849%2Cbc850.pdf Description: TRANS NPN 30V 0.1A PG-SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT23
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 330 mW
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BC848BE6433HTMA1 BC848BE6433HTMA1 Infineon Technologies bc846%2Cbc847%2Cbc848%2Cbc849%2Cbc850.pdf Description: TRANS NPN 30V 0.1A PG-SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT23
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 330 mW
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CY7C1350G-133AXC CY7C1350G-133AXC Infineon Technologies Infineon-CY7C1350G_4-Mbit_(128_K_36)_Pipelined_SRAM_with_NoBL_Architecture-DataSheet-v20_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec1032c35ab Description: IC SRAM 4.5MBIT PAR 100TQFP
Packaging: Bulk
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 4.5Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 133 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 4 ns
Memory Organization: 128K x 36
DigiKey Programmable: Not Verified
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50+12.13 EUR
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CY8C4014SXI-421 CY8C4014SXI-421 Infineon Technologies Infineon-PSoC_4_PSoC_4000_Family_Programmable_System-on-Chip_(PSoC)-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecc2b7d45ee&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC MCU 32BIT 16KB FLASH 16SOIC
Program Memory Size: 16KB (16K x 8)
Speed: 16MHz
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Packaging: Tube
DigiKey Programmable: Not Verified
Number of I/O: 13
Supplier Device Package: 16-SOIC
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Connectivity: I2C
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Core Size: 32-Bit Single-Core
Data Converters: D/A 1x7b, 1x8b
Core Processor: ARM® Cortex®-M0
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 2K x 8
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6+4.13 EUR
10+3.06 EUR
48+2.64 EUR
144+2.44 EUR
288+2.34 EUR
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CYAT817L-128AA72 Infineon Technologies Infineon-CYAT817L-100AA72-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c82ce566401837edadb500bad Description: PSOC BASED - TRUETOUCH
Packaging: Tray
Package / Case: 128-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 48KB (48K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: I2C, SPI, UART/USART
Peripherals: PWM
Supplier Device Package: PG-TQFP-128-800
Grade: Automotive
Number of I/O: 29
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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CYAT817LS-128AA72 Infineon Technologies Infineon-CYAT817L-100AA72-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c82ce566401837edadb500bad Description: PSOC BASED - TRUETOUCH
Core Size: 32-Bit
Core Processor: ARM® Cortex®-M0+
Program Memory Type: FLASH
Operating Temperature: -40°C ~ 85°C
RAM Size: 4K x 8
Program Memory Size: 48KB (48K x 8)
Speed: 48MHz
Mounting Type: Surface Mount
Package / Case: 128-LQFP
Packaging: Tray
Qualification: AEC-Q100
Number of I/O: 29
Grade: Automotive
Supplier Device Package: PG-TQFP-128-800
Peripherals: PWM
Connectivity: I2C, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
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CYAT817L-128AS72 Infineon Technologies Infineon-CYAT817L-100AA72-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c82ce566401837edadb500bad Description: PSOC BASED - TRUETOUCH
Qualification: AEC-Q100
Number of I/O: 29
Grade: Automotive
Supplier Device Package: PG-TQFP-128-800
Peripherals: PWM
Connectivity: I2C, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Core Size: 32-Bit
Core Processor: ARM® Cortex®-M0+
Program Memory Type: FLASH
Operating Temperature: -40°C ~ 105°C
RAM Size: 4K x 8
Program Memory Size: 48KB (48K x 8)
Speed: 48MHz
Mounting Type: Surface Mount
Package / Case: 128-LQFP
Packaging: Tray
Produkt ist nicht verfügbar
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CYAT817LS-128AS72 Infineon Technologies Infineon-CYAT817L-100AA72-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c82ce566401837edadb500bad Description: PSOC BASED - TRUETOUCH
Qualification: AEC-Q100
Number of I/O: 29
Grade: Automotive
Supplier Device Package: PG-TQFP-128-800
Peripherals: PWM
Connectivity: I2C, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Core Size: 32-Bit
Core Processor: ARM® Cortex®-M0+
Program Memory Type: FLASH
Operating Temperature: -40°C ~ 105°C
RAM Size: 4K x 8
Program Memory Size: 48KB (48K x 8)
Speed: 48MHz
Mounting Type: Surface Mount
Package / Case: 128-LQFP
Packaging: Tray
Produkt ist nicht verfügbar
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IPSA70R900P7SAKMA1 IPSA70R900P7SAKMA1 Infineon Technologies infineon-ipsa70r900p7s-ds-en.pdf Description: MOSFET N-CH 700V 6A TO251-3
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 1.1A, 10V
Power Dissipation (Max): 30.5W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 60µA
Supplier Device Package: PG-TO251-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 400 V
Input Capacitance (Ciss) (Max) @ Vds: 211 pF @ 400 V
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IAUC50N08S5L096ATMA1 IAUC50N08S5L096ATMA1 Infineon Technologies Infineon-IAUC50N08S5L096-DataSheet-v01_01-EN.pdf?fileId=5546d46279cccfdb0179ccd3f6cf0205 Description: MOSFET_(75V 120V( PG-TDSON-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A
Rds On (Max) @ Id, Vgs: 9.6mOhm @ 25A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 2V @ 24µA
Supplier Device Package: PG-TDSON-8-33
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1684 pF @ 40 V
Qualification: AEC-Q101
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12+1.83 EUR
100+1.23 EUR
500+0.96 EUR
1000+0.88 EUR
2000+0.86 EUR
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FP50R12KT4GB15BOSA1 FP50R12KT4GB15BOSA1 Infineon Technologies FP50R12KT4G_B15.pdf Description: IGBT MOD 1200V 50A 280W MOD
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 280 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 2.8 nF @ 25 V
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SAK-TC1766-192F80HL BB SAK-TC1766-192F80HL BB Infineon Technologies fundamentals-of-power-semiconductors Description: IC MCU 32BIT FLASH LQFP-176
Packaging: Tray
Package / Case: 176-LQFP
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 1.5M x 8
Supplier Device Package: PG-LQFP-176-2
Number of I/O: 81
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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TC223S16F133FACLXUMA1 TC223S16F133FACLXUMA1 Infineon Technologies Power_Sensing_Selection_Guide_2021.pdf Description: IC MCU 32BIT 1MB FLASH 100TQFP
Packaging: Tape & Reel (TR)
Package / Case: 100-TQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 133MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 96K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 96K x 8
Core Processor: TriCore™
Data Converters: A/D 24x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 3.3V
Connectivity: CANbus, FlexRay, LINbus, QSPI
Peripherals: DMA, WDT
Supplier Device Package: PG-TQFP-100-23
Number of I/O: 78
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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TC233LP32F200FACLXUMA1 TC233LP32F200FACLXUMA1 Infineon Technologies Infineon-TC23xAC_DS-DataSheet-v01_00-EN.pdf?fileId=5546d462694c98b401695316f3d103ee Description: IC MCU 32BIT 2MB FLASH 100TQFP
Packaging: Tape & Reel (TR)
Package / Case: 100-TQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 2MB (2M x 8)
RAM Size: 192K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: TriCore™
Data Converters: A/D 24x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 3.3V
Connectivity: CANbus, FlexRay, LINbus, QSPI
Peripherals: DMA, WDT
Supplier Device Package: PG-TQFP-100-23
Number of I/O: 78
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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PZTA14H6327XTSA1 PZTA14H6327XTSA1 Infineon Technologies pzta14.pdf?folderId=db3a30431441fb5d011445c30f210183&fileId=db3a30431441fb5d011445e89099018b Description: TRANS NPN DARL 30V 0.3A SOT223-4
Power - Max: 1.5 W
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 300 mA
Supplier Device Package: PG-SOT223-4
Frequency - Transition: 125MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 100mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN - Darlington
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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KP256XTMA2 KP256XTMA2 Infineon Technologies KP256.pdf Description: IC ANLG BAROMETRIC SNSR DSOF8
Applications: Board Mount
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1500 Stücke
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KP256XTMA2 KP256XTMA2 Infineon Technologies KP256.pdf Description: IC ANLG BAROMETRIC SNSR DSOF8
Applications: Board Mount
Packaging: Cut Tape (CT)
auf Bestellung 1463 Stücke:
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3+9.97 EUR
5+8.95 EUR
10+8.57 EUR
25+8.12 EUR
50+7.82 EUR
100+7.53 EUR
500+6.97 EUR
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KP254XTMA2 KP254XTMA2 Infineon Technologies Infineon-KP254-DS-v01_01-EN.pdf?fileId=5546d46254e133b401557355b9a5643b Description: IC ANLG BAROMETRIC SNSR DSOF8-16
Applications: Board Mount
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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KP254XTMA2 KP254XTMA2 Infineon Technologies Infineon-KP254-DS-v01_01-EN.pdf?fileId=5546d46254e133b401557355b9a5643b Description: IC ANLG BAROMETRIC SNSR DSOF8-16
Packaging: Cut Tape (CT)
Applications: Board Mount
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3+9.65 EUR
5+8.68 EUR
10+8.31 EUR
25+7.88 EUR
50+7.58 EUR
100+7.31 EUR
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IPI50N10S3L16AKSA1 IPI50N10S3L16AKSA1 Infineon Technologies Infineon-IPP_B_I50N10S3L_16-DS-v01_01-en.pdf?folderId=db3a3043156fd5730115c7d50620107c&fileId=db3a30431a5c32f2011a9090a32c5962&ack=t Description: MOSFET N-CH 100V 50A TO262-3
Grade: Automotive
Qualification: AEC-Q101
Rds On (Max) @ Id, Vgs: 15.7mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 4180 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PG-TO262-3
Vgs(th) (Max) @ Id: 2.4V @ 60µA
Power Dissipation (Max): 100W (Tc)
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IPD30N10S3L34ATMA2 IPD30N10S3L34ATMA2 Infineon Technologies Infineon-IPD30N10S3L-34-DataSheet-v01_02-EN.pdf?fileId=db3a30431a5c32f2011a908963135956 Description: MOSFET_(75V 120V(
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 31mOhm @ 30A, 10V
Power Dissipation (Max): 57W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 29µA
Supplier Device Package: PG-TO252-3-11
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1976 pF @ 25 V
Qualification: AEC-Q101
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IR25603STRPBF IR25603STRPBF Infineon Technologies ir25603.pdf?fileId=5546d462533600a4015355c9e46716ef Description: IC GATE DRVR HALF-BRIDGE 8SOIC
DigiKey Programmable: Not Verified
Current - Peak Output (Source, Sink): 180mA, 260mA
Gate Type: MOSFET (N-Channel)
Number of Drivers: 2
Driven Configuration: Half-Bridge
Channel Type: Synchronous
Rise / Fall Time (Typ): 80ns, 45ns
Supplier Device Package: 8-SOIC
High Side Voltage - Max (Bootstrap): 600 V
Input Type: RC Input Circuit
Voltage - Supply: 10V ~ 15.6V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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IR25603STRPBF IR25603STRPBF Infineon Technologies ir25603.pdf?fileId=5546d462533600a4015355c9e46716ef Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 15.6V
Input Type: RC Input Circuit
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 80ns, 45ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Current - Peak Output (Source, Sink): 180mA, 260mA
DigiKey Programmable: Not Verified
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IDP20C65D2XKSA1 IDP20C65D2XKSA1 Infineon Technologies Infineon-IDP20C65D2-DS-v02_01-EN.pdf?fileId=5546d4624933b87501493c2a338c3e94 Description: DIODE ARR GP 650V 10A TO220-3-1
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 28 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: PG-TO220-3-1
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 10 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
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IDP30C65D2XKSA1 IDP30C65D2XKSA1 Infineon Technologies Infineon-IDP30C65D2-DS-v02_01-EN.pdf?fileId=5546d4624933b87501493c4ef31f3ebf Description: DIODE ARRAY GP 650V 15A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 31 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: PG-TO220-3
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 15 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
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BAT1705E6327HTSA1 BAT1705E6327HTSA1 Infineon Technologies fundamentals-of-power-semiconductors Description: DIODE SCHOTTKY 4V 150MW SOT23-3
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Diode Type: Schottky - 1 Pair Common Cathode
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.75pF @ 0V, 1MHz
Resistance @ If, F: 15Ohm @ 5mA, 10kHz
Voltage - Peak Reverse (Max): 4V
Supplier Device Package: PG-SOT23
Current - Max: 130 mA
Power Dissipation (Max): 150 mW
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CY8C6036BZI-F04 CY8C6036BZI-F04 Infineon Technologies Infineon-PSoC_6_MCU_PSoC_61_Datasheet_Programmable_System-on-Chip_(PSoC)-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee513576c97&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-file Description: IC MCU 32BIT 512KB FLASH 124BGA
Packaging: Tray
Package / Case: 124-VFBGA
Mounting Type: Surface Mount
Speed: 150MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 128K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 32K x 8
Core Processor: ARM® Cortex®-M4
Data Converters: A/D 8x12b SAR; D/A 1x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
Connectivity: I2C, LINbus, QSPI, SPI, UART/USART, USB
Peripherals: Brown-out Detect/Reset, DMA, I2S, POR, PWM, WDT
Supplier Device Package: 124-VFBGA (9x9)
Number of I/O: 104
DigiKey Programmable: Not Verified
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CY8C6016BZI-F04 CY8C6016BZI-F04 Infineon Technologies Infineon-PSoC_6_MCU_PSoC_61_Datasheet_Programmable_System-on-Chip_(PSoC)-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee513576c97&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-file Description: IC MCU 32BIT 512KB FLASH 124BGA
Packaging: Tray
Package / Case: 124-VFBGA
Mounting Type: Surface Mount
Speed: 50MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 128K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 32K x 8
Core Processor: ARM® Cortex®-M4
Data Converters: A/D 8x12b SAR; D/A 1x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
Connectivity: I2C, LINbus, QSPI, SPI, UART/USART, USB
Peripherals: Brown-out Detect/Reset, DMA, I2S, POR, PWM, WDT
Supplier Device Package: 124-VFBGA (9x9)
Number of I/O: 104
DigiKey Programmable: Not Verified
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S29GL064N90TFI040 S29GL064N90TFI040 Infineon Technologies infineon-s29gl064n-s29gl032n-64-mbit-32-mbit-3-v-page-mode-mirrorbit-flash-datasheet-en.pdf description Description: IC FLASH 64MBIT PARALLEL 48TSOP
Packaging: Tray
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 48-TSOP
Write Cycle Time - Word, Page: 90ns
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 8M x 8, 4M x 16
DigiKey Programmable: Verified
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S29GL064N90FFI040 S29GL064N90FFI040 Infineon Technologies infineon-s29gl064n-s29gl032n-64-mbit-32-mbit-3-v-page-mode-mirrorbit-flash-datasheet-en.pdf Description: IC FLASH 64MBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Write Cycle Time - Word, Page: 90ns
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 8M x 8, 4M x 16
DigiKey Programmable: Not Verified
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FM24C04B-G2 FM24C04B-G2 Infineon Technologies Description: IC FRAM 4KBIT I2C 1MHZ 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: FRAM (Ferroelectric RAM)
Clock Frequency: 1 MHz
Memory Format: FRAM
Supplier Device Package: 8-SOIC
Memory Interface: I2C
Access Time: 550 ns
Memory Organization: 512 x 8
DigiKey Programmable: Not Verified
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AUIRLR3410TR AUIRLR3410TR Infineon Technologies IRSD-S-A0000226357-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 100V 17A DPAK
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 5 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Supplier Device Package: TO-252AA (DPAK)
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 79W (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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CY9BF002BGL-G-XXX-ERE1 Infineon Technologies Description: IC MCU
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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IRS9100CXTSA1 IRS9100CXTSA1 Infineon Technologies Infineon-IRS9100C-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c88ae21230188f84a74a34be7 Description: 3DI
Packaging: Tape & Reel (TR)
Package / Case: 10-XFQFN
Mounting Type: Surface Mount
Type: Laser Diode Driver
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.52V ~ 3.7V
Supplier Device Package: PG-TSNP-10-4
Number of Channels: 1
Current - Supply: 4 mA
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IRS9100CXTSA1 IRS9100CXTSA1 Infineon Technologies Infineon-IRS9100C-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c88ae21230188f84a74a34be7 Description: 3DI
Packaging: Cut Tape (CT)
Package / Case: 10-XFQFN
Mounting Type: Surface Mount
Type: Laser Diode Driver
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.52V ~ 3.7V
Supplier Device Package: PG-TSNP-10-4
Number of Channels: 1
Current - Supply: 4 mA
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ISC073N12LM6ATMA1 ISC073N12LM6ATMA1 Infineon Technologies Infineon-ISC073N12LM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c850f4bee0185c27a53ca5378 Description: OPTIMOS 6 POWER-TRANSISTOR,120V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.4A (Ta), 86A (Tc)
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 40A, 10V
Power Dissipation (Max): 3W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 50µA
Supplier Device Package: PG-TDSON-8
Drive Voltage (Max Rds On, Min Rds On): 3.3V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 60 V
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ISC073N12LM6ATMA1 ISC073N12LM6ATMA1 Infineon Technologies Infineon-ISC073N12LM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c850f4bee0185c27a53ca5378 Description: OPTIMOS 6 POWER-TRANSISTOR,120V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.4A (Ta), 86A (Tc)
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 40A, 10V
Power Dissipation (Max): 3W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 50µA
Supplier Device Package: PG-TDSON-8
Drive Voltage (Max Rds On, Min Rds On): 3.3V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 60 V
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CY8C4125LQI-483 CY8C4125LQI-483 Infineon Technologies Infineon-PSoC_4_PSoC_4100_Family-DataSheet-v12_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec86cc240d7&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC MCU 32BIT 32KB FLASH 40QFN
Packaging: Bulk
Package / Case: 40-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 8x12b SAR; D/A 2xIDAC
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 40-QFN (6x6)
Number of I/O: 34
DigiKey Programmable: Not Verified
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CY8C4146LQE-S423 CY8C4146LQE-S423 Infineon Technologies Description: PSOC4 - GENERAL
Packaging: Tray
Package / Case: 40-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b, 12x12b SAR; D/A 2x7b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 40-QFN (6x6)
Grade: Automotive
Number of I/O: 34
Qualification: AEC-Q100
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S25FL256SAGBHIA03 S25FL256SAGBHIA03 Infineon Technologies 001-98283%20Rev%20T.pdf Description: IC FLASH 256MBIT SPI/QUAD 24BGA
Packaging: Tape & Reel (TR)
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (8x6)
Memory Interface: SPI - Quad I/O
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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S25FL256SAGBHIA03 S25FL256SAGBHIA03 Infineon Technologies 001-98283%20Rev%20T.pdf Description: IC FLASH 256MBIT SPI/QUAD 24BGA
Packaging: Cut Tape (CT)
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (8x6)
Memory Interface: SPI - Quad I/O
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
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IPP65R420CFDXKSA2 IPP65R420CFDXKSA2 Infineon Technologies Infineon-IPX65R420CFD-DataSheet-v02_06-EN.pdf?fileId=8ac78c8c82ce56640182d510b9ad5997 Description: MOSFET N-CH 650V 8.7A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.7A (Tc)
Rds On (Max) @ Id, Vgs: 420mOhm @ 3.4A, 10V
Power Dissipation (Max): 83.3W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 300µA
Supplier Device Package: PG-TO220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 31.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 100 V
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IPP65R310CFDXKSA2 IPP65R310CFDXKSA2 Infineon Technologies Infineon-IPX65R310CFD-DS-v02_03-en[1].pdf?fileId=db3a30432f91014f012f9caff105741c Description: MOSFET N-CH 650V 11.4A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.4A (Tc)
Rds On (Max) @ Id, Vgs: 310mOhm @ 4.4A, 10V
Power Dissipation (Max): 104.2W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 400µA
Supplier Device Package: PG-TO220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V
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IPP65R110CFDXKSA2 IPP65R110CFDXKSA2 Infineon Technologies Infineon-IPX65R110CFD-DS-v02_06-en.pdf?fileId=db3a30433004641301306abd8e2041b1 Description: MOSFET N-CH 650V 31.2A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31.2A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 12.7A, 10V
Power Dissipation (Max): 277.8W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.3mA
Supplier Device Package: PG-TO220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 118 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3240 pF @ 100 V
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AUIRFR3504TRL AUIRFR3504TRL Infineon Technologies AUIRFR3504.pdf Description: MOSFET N-CH 40V 56A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 9.2mOhm @ 30A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BSP129L6327HTSA1 BSP129L6327HTSA1 Infineon Technologies Infineon-BSP129-DS-v01_42-en.pdf?fileId=db3a30433c1a8752013c1fc296d2395f Description: MOSFET N-CH 240V 350MA SOT223-4
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
Rds On (Max) @ Id, Vgs: 6Ohm @ 350mA, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 1V @ 108µA
Supplier Device Package: PG-SOT223-4-21
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 240 V
Gate Charge (Qg) (Max) @ Vgs: 5.7 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 108 pF @ 25 V
Qualification: AEC-Q101
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TLE49161KHTSA1 TLE49161KHTSA1 Infineon Technologies TLE4916-1K_FinalDS_Rev1.0.pdf?folderId=db3a30431689f4420116a096e1db033e&fileId=db3a304327b8975001281b98f40d1aeb Description: MAGNETIC SWITCH LATCH SC59
Features: Temperature Compensated
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Open Drain
Polarization: South Pole
Mounting Type: Surface Mount
Function: Latch
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 2.4V ~ 5V
Technology: Hall Effect
Sensing Range: 5mT Trip, -5mT Release
Current - Output (Max): 2mA
Current - Supply (Max): 10µA
Supplier Device Package: PG-SC59-3
Test Condition: 25°C
Produkt ist nicht verfügbar
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IR2155PBF IR2155PBF Infineon Technologies ir2155.pdf?fileId=5546d462533600a4015355c8dec316b6 Description: IC GATE DRVR HALF-BRIDGE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: RC Input Circuit
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 80ns, 45ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Current - Peak Output (Source, Sink): 250mA, 500mA
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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BCR129E6327HTSA1 BCR129E6327HTSA1 Infineon Technologies bcr129series.pdf?folderId=db3a30431400ef68011406f3ddb1012e&fileId=db3a30431428a37301143f7ab7820287 Description: TRANS PREBIAS NPN 50V SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V
Supplier Device Package: PG-SOT23
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 150 MHz
Resistor - Base (R1): 10 kOhms
Resistors Included: R1 Only
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BCR129WH6327XTSA1 BCR129WH6327XTSA1 Infineon Technologies bcr129series.pdf?folderId=db3a30431400ef68011406f3ddb1012e&fileId=db3a30431428a37301143f7ab7820287 Description: TRANS PREBIAS NPN 50V SOT323
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V
Supplier Device Package: PG-SOT323
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 150 MHz
Resistor - Base (R1): 10 kOhms
Resistors Included: R1 Only
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BCR129SH6327XTSA1 BCR129SH6327XTSA1 Infineon Technologies bcr129series.pdf?folderId=db3a30431400ef68011406f3ddb1012e&fileId=db3a30431428a37301143f7ab7820287 Description: TRANS PREBIAS 2NPN 50V SOT363
Packaging: Bulk
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V
Frequency - Transition: 150MHz
Resistor - Base (R1): 10kOhms
Supplier Device Package: PG-SOT363-PO
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IR38060MGM18TRP Infineon Technologies Infineon-IR38060M-DS-v03_84-EN.pdf?fileId=5546d4625c167129015c3291ea9a4cee Description: IC REG DC-DC 35IQFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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TLV49642MXTMA1 fundamentals-of-power-semiconductors
Hersteller: Infineon Technologies
Description: MAG SWITCH IC HALL EFF SOT23-3
Packaging: Tape & Reel (TR)
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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FF300R07ME4BOSA1 Infineon-FF300R07ME4-DataSheet-v03_00-EN.pdf?fileId=5546d4626e651a41016e7e1956c9107b
FF300R07ME4BOSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 650V 300A AG-ECONOD-3
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 300A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONOD-3
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 300 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 18.5 nF @ 25 V
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FF450R07ME4BOSA1 Infineon-FF450R07ME4-DataSheet-v03_00-EN.pdf?fileId=5546d4626e651a41016e7e227bfd1087
FF450R07ME4BOSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 650V 450A AG-ECONOD-3
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 450A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONOD-3
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 450 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 27.5 nF @ 25 V
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FD400R07PE4RB6BOSA1 Infineon-FD400R07PE4R_B6-DS-v03_00-en_de.pdf?fileId=db3a30433a047ba0013a6e432c415fb4
Hersteller: Infineon Technologies
Description: IGBT MOD 650V 460A 1150W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 400A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 460 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 1150 W
Current - Collector Cutoff (Max): 20 µA
Input Capacitance (Cies) @ Vce: 18.5 nF @ 25 V
Produkt ist nicht verfügbar
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FP100R07N3E4BOSA1 Infineon-FP100R07N3E4-DS-v02_01-en_de.pdf?fileId=db3a3043324cae8c013262bbe5453970
FP100R07N3E4BOSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 650V 100A 335W MOD
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 335 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 6.2 nF @ 25 V
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AnzahlPrivatkunde
3+191.77 EUR
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CY7C1327G-133AXIT Infineon-CY7C1327G_4-Mbit_(256_K_18)_Pipelined_Sync_SRAM-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec41d4b3988
CY7C1327G-133AXIT
Hersteller: Infineon Technologies
Description: IC SRAM 4.5MBIT PAR 100TQFP
Access Time: 4 ns
Memory Interface: Parallel
Supplier Device Package: 100-TQFP (14x20)
Memory Format: SRAM
Clock Frequency: 133 MHz
Technology: SRAM - Synchronous, SDR
Voltage - Supply: 3.15V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Volatile
Memory Size: 4.5Mbit
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Memory Organization: 256K x 18
Produkt ist nicht verfügbar
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D255N04BXPSA1 D255N.pdf
D255N04BXPSA1
Hersteller: Infineon Technologies
Description: DIODE GEN PURP 400V 255A
Packaging: Bulk
Package / Case: DO-205AA, DO-8, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 255A
Operating Temperature - Junction: -40°C ~ 180°C
Voltage - DC Reverse (Vr) (Max): 400 V
Current - Reverse Leakage @ Vr: 20 mA @ 400 V
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2+308.45 EUR
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BC848BWH6327XTSA1 bc846%2Cbc847%2Cbc848%2Cbc849%2Cbc850.pdf
BC848BWH6327XTSA1
Hersteller: Infineon Technologies
Description: TRANS NPN 30V 0.1A PG-SOT323
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT323
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 250 mW
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5042+0.11 EUR
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BC848BE6327HTSA1 bc846%2Cbc847%2Cbc848%2Cbc849%2Cbc850.pdf
BC848BE6327HTSA1
Hersteller: Infineon Technologies
Description: TRANS NPN 30V 0.1A PG-SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT23
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 330 mW
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BC848BE6433HTMA1 bc846%2Cbc847%2Cbc848%2Cbc849%2Cbc850.pdf
BC848BE6433HTMA1
Hersteller: Infineon Technologies
Description: TRANS NPN 30V 0.1A PG-SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT23
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 330 mW
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5369+0.11 EUR
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CY7C1350G-133AXC Infineon-CY7C1350G_4-Mbit_(128_K_36)_Pipelined_SRAM_with_NoBL_Architecture-DataSheet-v20_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec1032c35ab
CY7C1350G-133AXC
Hersteller: Infineon Technologies
Description: IC SRAM 4.5MBIT PAR 100TQFP
Packaging: Bulk
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 4.5Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 133 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 4 ns
Memory Organization: 128K x 36
DigiKey Programmable: Not Verified
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50+12.13 EUR
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CY8C4014SXI-421 Infineon-PSoC_4_PSoC_4000_Family_Programmable_System-on-Chip_(PSoC)-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecc2b7d45ee&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY8C4014SXI-421
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 16KB FLASH 16SOIC
Program Memory Size: 16KB (16K x 8)
Speed: 16MHz
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Packaging: Tube
DigiKey Programmable: Not Verified
Number of I/O: 13
Supplier Device Package: 16-SOIC
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Connectivity: I2C
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Core Size: 32-Bit Single-Core
Data Converters: D/A 1x7b, 1x8b
Core Processor: ARM® Cortex®-M0
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 2K x 8
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6+4.13 EUR
10+3.06 EUR
48+2.64 EUR
144+2.44 EUR
288+2.34 EUR
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CYAT817L-128AA72 Infineon-CYAT817L-100AA72-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c82ce566401837edadb500bad
Hersteller: Infineon Technologies
Description: PSOC BASED - TRUETOUCH
Packaging: Tray
Package / Case: 128-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 48KB (48K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: I2C, SPI, UART/USART
Peripherals: PWM
Supplier Device Package: PG-TQFP-128-800
Grade: Automotive
Number of I/O: 29
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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CYAT817LS-128AA72 Infineon-CYAT817L-100AA72-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c82ce566401837edadb500bad
Hersteller: Infineon Technologies
Description: PSOC BASED - TRUETOUCH
Core Size: 32-Bit
Core Processor: ARM® Cortex®-M0+
Program Memory Type: FLASH
Operating Temperature: -40°C ~ 85°C
RAM Size: 4K x 8
Program Memory Size: 48KB (48K x 8)
Speed: 48MHz
Mounting Type: Surface Mount
Package / Case: 128-LQFP
Packaging: Tray
Qualification: AEC-Q100
Number of I/O: 29
Grade: Automotive
Supplier Device Package: PG-TQFP-128-800
Peripherals: PWM
Connectivity: I2C, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
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CYAT817L-128AS72 Infineon-CYAT817L-100AA72-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c82ce566401837edadb500bad
Hersteller: Infineon Technologies
Description: PSOC BASED - TRUETOUCH
Qualification: AEC-Q100
Number of I/O: 29
Grade: Automotive
Supplier Device Package: PG-TQFP-128-800
Peripherals: PWM
Connectivity: I2C, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Core Size: 32-Bit
Core Processor: ARM® Cortex®-M0+
Program Memory Type: FLASH
Operating Temperature: -40°C ~ 105°C
RAM Size: 4K x 8
Program Memory Size: 48KB (48K x 8)
Speed: 48MHz
Mounting Type: Surface Mount
Package / Case: 128-LQFP
Packaging: Tray
Produkt ist nicht verfügbar
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CYAT817LS-128AS72 Infineon-CYAT817L-100AA72-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c82ce566401837edadb500bad
Hersteller: Infineon Technologies
Description: PSOC BASED - TRUETOUCH
Qualification: AEC-Q100
Number of I/O: 29
Grade: Automotive
Supplier Device Package: PG-TQFP-128-800
Peripherals: PWM
Connectivity: I2C, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Core Size: 32-Bit
Core Processor: ARM® Cortex®-M0+
Program Memory Type: FLASH
Operating Temperature: -40°C ~ 105°C
RAM Size: 4K x 8
Program Memory Size: 48KB (48K x 8)
Speed: 48MHz
Mounting Type: Surface Mount
Package / Case: 128-LQFP
Packaging: Tray
Produkt ist nicht verfügbar
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IPSA70R900P7SAKMA1 infineon-ipsa70r900p7s-ds-en.pdf
IPSA70R900P7SAKMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 700V 6A TO251-3
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 1.1A, 10V
Power Dissipation (Max): 30.5W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 60µA
Supplier Device Package: PG-TO251-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 400 V
Input Capacitance (Ciss) (Max) @ Vds: 211 pF @ 400 V
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774+0.7 EUR
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IAUC50N08S5L096ATMA1 Infineon-IAUC50N08S5L096-DataSheet-v01_01-EN.pdf?fileId=5546d46279cccfdb0179ccd3f6cf0205
IAUC50N08S5L096ATMA1
Hersteller: Infineon Technologies
Description: MOSFET_(75V 120V( PG-TDSON-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A
Rds On (Max) @ Id, Vgs: 9.6mOhm @ 25A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 2V @ 24µA
Supplier Device Package: PG-TDSON-8-33
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1684 pF @ 40 V
Qualification: AEC-Q101
auf Bestellung 10364 Stücke:
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8+2.89 EUR
12+1.83 EUR
100+1.23 EUR
500+0.96 EUR
1000+0.88 EUR
2000+0.86 EUR
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FP50R12KT4GB15BOSA1 FP50R12KT4G_B15.pdf
FP50R12KT4GB15BOSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 50A 280W MOD
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 280 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 2.8 nF @ 25 V
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3+171.88 EUR
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SAK-TC1766-192F80HL BB fundamentals-of-power-semiconductors
SAK-TC1766-192F80HL BB
Hersteller: Infineon Technologies
Description: IC MCU 32BIT FLASH LQFP-176
Packaging: Tray
Package / Case: 176-LQFP
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 1.5M x 8
Supplier Device Package: PG-LQFP-176-2
Number of I/O: 81
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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TC223S16F133FACLXUMA1 Power_Sensing_Selection_Guide_2021.pdf
TC223S16F133FACLXUMA1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 1MB FLASH 100TQFP
Packaging: Tape & Reel (TR)
Package / Case: 100-TQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 133MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 96K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 96K x 8
Core Processor: TriCore™
Data Converters: A/D 24x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 3.3V
Connectivity: CANbus, FlexRay, LINbus, QSPI
Peripherals: DMA, WDT
Supplier Device Package: PG-TQFP-100-23
Number of I/O: 78
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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TC233LP32F200FACLXUMA1 Infineon-TC23xAC_DS-DataSheet-v01_00-EN.pdf?fileId=5546d462694c98b401695316f3d103ee
TC233LP32F200FACLXUMA1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 2MB FLASH 100TQFP
Packaging: Tape & Reel (TR)
Package / Case: 100-TQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 2MB (2M x 8)
RAM Size: 192K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: TriCore™
Data Converters: A/D 24x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 3.3V
Connectivity: CANbus, FlexRay, LINbus, QSPI
Peripherals: DMA, WDT
Supplier Device Package: PG-TQFP-100-23
Number of I/O: 78
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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PZTA14H6327XTSA1 pzta14.pdf?folderId=db3a30431441fb5d011445c30f210183&fileId=db3a30431441fb5d011445e89099018b
PZTA14H6327XTSA1
Hersteller: Infineon Technologies
Description: TRANS NPN DARL 30V 0.3A SOT223-4
Power - Max: 1.5 W
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 300 mA
Supplier Device Package: PG-SOT223-4
Frequency - Transition: 125MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 100mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN - Darlington
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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KP256XTMA2 KP256.pdf
KP256XTMA2
Hersteller: Infineon Technologies
Description: IC ANLG BAROMETRIC SNSR DSOF8
Applications: Board Mount
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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KP256XTMA2 KP256.pdf
KP256XTMA2
Hersteller: Infineon Technologies
Description: IC ANLG BAROMETRIC SNSR DSOF8
Applications: Board Mount
Packaging: Cut Tape (CT)
auf Bestellung 1463 Stücke:
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AnzahlPrivatkunde
3+9.97 EUR
5+8.95 EUR
10+8.57 EUR
25+8.12 EUR
50+7.82 EUR
100+7.53 EUR
500+6.97 EUR
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KP254XTMA2 Infineon-KP254-DS-v01_01-EN.pdf?fileId=5546d46254e133b401557355b9a5643b
KP254XTMA2
Hersteller: Infineon Technologies
Description: IC ANLG BAROMETRIC SNSR DSOF8-16
Applications: Board Mount
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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KP254XTMA2 Infineon-KP254-DS-v01_01-EN.pdf?fileId=5546d46254e133b401557355b9a5643b
KP254XTMA2
Hersteller: Infineon Technologies
Description: IC ANLG BAROMETRIC SNSR DSOF8-16
Packaging: Cut Tape (CT)
Applications: Board Mount
auf Bestellung 1366 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+9.65 EUR
5+8.68 EUR
10+8.31 EUR
25+7.88 EUR
50+7.58 EUR
100+7.31 EUR
500+6.85 EUR
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IPI50N10S3L16AKSA1 Infineon-IPP_B_I50N10S3L_16-DS-v01_01-en.pdf?folderId=db3a3043156fd5730115c7d50620107c&fileId=db3a30431a5c32f2011a9090a32c5962&ack=t
IPI50N10S3L16AKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 50A TO262-3
Grade: Automotive
Qualification: AEC-Q101
Rds On (Max) @ Id, Vgs: 15.7mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 4180 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PG-TO262-3
Vgs(th) (Max) @ Id: 2.4V @ 60µA
Power Dissipation (Max): 100W (Tc)
auf Bestellung 12775 Stücke:
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231+2.51 EUR
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IPD30N10S3L34ATMA2 Infineon-IPD30N10S3L-34-DataSheet-v01_02-EN.pdf?fileId=db3a30431a5c32f2011a908963135956
IPD30N10S3L34ATMA2
Hersteller: Infineon Technologies
Description: MOSFET_(75V 120V(
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 31mOhm @ 30A, 10V
Power Dissipation (Max): 57W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 29µA
Supplier Device Package: PG-TO252-3-11
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1976 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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IR25603STRPBF ir25603.pdf?fileId=5546d462533600a4015355c9e46716ef
IR25603STRPBF
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
DigiKey Programmable: Not Verified
Current - Peak Output (Source, Sink): 180mA, 260mA
Gate Type: MOSFET (N-Channel)
Number of Drivers: 2
Driven Configuration: Half-Bridge
Channel Type: Synchronous
Rise / Fall Time (Typ): 80ns, 45ns
Supplier Device Package: 8-SOIC
High Side Voltage - Max (Bootstrap): 600 V
Input Type: RC Input Circuit
Voltage - Supply: 10V ~ 15.6V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
auf Bestellung 2500 Stücke:
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2500+1.5 EUR
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IR25603STRPBF ir25603.pdf?fileId=5546d462533600a4015355c9e46716ef
IR25603STRPBF
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 15.6V
Input Type: RC Input Circuit
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 80ns, 45ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Current - Peak Output (Source, Sink): 180mA, 260mA
DigiKey Programmable: Not Verified
auf Bestellung 4897 Stücke:
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7+3 EUR
10+2.2 EUR
25+2 EUR
100+1.77 EUR
250+1.68 EUR
500+1.61 EUR
1000+1.56 EUR
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IDP20C65D2XKSA1 Infineon-IDP20C65D2-DS-v02_01-EN.pdf?fileId=5546d4624933b87501493c2a338c3e94
IDP20C65D2XKSA1
Hersteller: Infineon Technologies
Description: DIODE ARR GP 650V 10A TO220-3-1
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 28 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: PG-TO220-3-1
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 10 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
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7+3.09 EUR
11+1.98 EUR
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IDP30C65D2XKSA1 Infineon-IDP30C65D2-DS-v02_01-EN.pdf?fileId=5546d4624933b87501493c4ef31f3ebf
IDP30C65D2XKSA1
Hersteller: Infineon Technologies
Description: DIODE ARRAY GP 650V 15A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 31 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: PG-TO220-3
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 15 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
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BAT1705E6327HTSA1 fundamentals-of-power-semiconductors
BAT1705E6327HTSA1
Hersteller: Infineon Technologies
Description: DIODE SCHOTTKY 4V 150MW SOT23-3
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Diode Type: Schottky - 1 Pair Common Cathode
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.75pF @ 0V, 1MHz
Resistance @ If, F: 15Ohm @ 5mA, 10kHz
Voltage - Peak Reverse (Max): 4V
Supplier Device Package: PG-SOT23
Current - Max: 130 mA
Power Dissipation (Max): 150 mW
auf Bestellung 129000 Stücke:
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AnzahlPrivatkunde
2834+0.2 EUR
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CY8C6036BZI-F04 Infineon-PSoC_6_MCU_PSoC_61_Datasheet_Programmable_System-on-Chip_(PSoC)-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee513576c97&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-file
CY8C6036BZI-F04
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 512KB FLASH 124BGA
Packaging: Tray
Package / Case: 124-VFBGA
Mounting Type: Surface Mount
Speed: 150MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 128K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 32K x 8
Core Processor: ARM® Cortex®-M4
Data Converters: A/D 8x12b SAR; D/A 1x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
Connectivity: I2C, LINbus, QSPI, SPI, UART/USART, USB
Peripherals: Brown-out Detect/Reset, DMA, I2S, POR, PWM, WDT
Supplier Device Package: 124-VFBGA (9x9)
Number of I/O: 104
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY8C6016BZI-F04 Infineon-PSoC_6_MCU_PSoC_61_Datasheet_Programmable_System-on-Chip_(PSoC)-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee513576c97&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-file
CY8C6016BZI-F04
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 512KB FLASH 124BGA
Packaging: Tray
Package / Case: 124-VFBGA
Mounting Type: Surface Mount
Speed: 50MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 128K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 32K x 8
Core Processor: ARM® Cortex®-M4
Data Converters: A/D 8x12b SAR; D/A 1x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
Connectivity: I2C, LINbus, QSPI, SPI, UART/USART, USB
Peripherals: Brown-out Detect/Reset, DMA, I2S, POR, PWM, WDT
Supplier Device Package: 124-VFBGA (9x9)
Number of I/O: 104
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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S29GL064N90TFI040 description infineon-s29gl064n-s29gl032n-64-mbit-32-mbit-3-v-page-mode-mirrorbit-flash-datasheet-en.pdf
S29GL064N90TFI040
Hersteller: Infineon Technologies
Description: IC FLASH 64MBIT PARALLEL 48TSOP
Packaging: Tray
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 48-TSOP
Write Cycle Time - Word, Page: 90ns
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 8M x 8, 4M x 16
DigiKey Programmable: Verified
Produkt ist nicht verfügbar
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S29GL064N90FFI040 infineon-s29gl064n-s29gl032n-64-mbit-32-mbit-3-v-page-mode-mirrorbit-flash-datasheet-en.pdf
S29GL064N90FFI040
Hersteller: Infineon Technologies
Description: IC FLASH 64MBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Write Cycle Time - Word, Page: 90ns
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 8M x 8, 4M x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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FM24C04B-G2
FM24C04B-G2
Hersteller: Infineon Technologies
Description: IC FRAM 4KBIT I2C 1MHZ 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: FRAM (Ferroelectric RAM)
Clock Frequency: 1 MHz
Memory Format: FRAM
Supplier Device Package: 8-SOIC
Memory Interface: I2C
Access Time: 550 ns
Memory Organization: 512 x 8
DigiKey Programmable: Not Verified
auf Bestellung 2208 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
500+2.08 EUR
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AUIRLR3410TR IRSD-S-A0000226357-1.pdf?t.download=true&u=5oefqw
AUIRLR3410TR
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 17A DPAK
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 5 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Supplier Device Package: TO-252AA (DPAK)
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 79W (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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CY9BF002BGL-G-XXX-ERE1
Hersteller: Infineon Technologies
Description: IC MCU
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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IRS9100CXTSA1 Infineon-IRS9100C-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c88ae21230188f84a74a34be7
IRS9100CXTSA1
Hersteller: Infineon Technologies
Description: 3DI
Packaging: Tape & Reel (TR)
Package / Case: 10-XFQFN
Mounting Type: Surface Mount
Type: Laser Diode Driver
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.52V ~ 3.7V
Supplier Device Package: PG-TSNP-10-4
Number of Channels: 1
Current - Supply: 4 mA
Produkt ist nicht verfügbar
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IRS9100CXTSA1 Infineon-IRS9100C-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c88ae21230188f84a74a34be7
IRS9100CXTSA1
Hersteller: Infineon Technologies
Description: 3DI
Packaging: Cut Tape (CT)
Package / Case: 10-XFQFN
Mounting Type: Surface Mount
Type: Laser Diode Driver
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.52V ~ 3.7V
Supplier Device Package: PG-TSNP-10-4
Number of Channels: 1
Current - Supply: 4 mA
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9+2.53 EUR
12+1.86 EUR
25+1.68 EUR
100+1.49 EUR
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500+1.34 EUR
1000+1.3 EUR
2500+1.25 EUR
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ISC073N12LM6ATMA1 Infineon-ISC073N12LM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c850f4bee0185c27a53ca5378
ISC073N12LM6ATMA1
Hersteller: Infineon Technologies
Description: OPTIMOS 6 POWER-TRANSISTOR,120V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.4A (Ta), 86A (Tc)
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 40A, 10V
Power Dissipation (Max): 3W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 50µA
Supplier Device Package: PG-TDSON-8
Drive Voltage (Max Rds On, Min Rds On): 3.3V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 60 V
Produkt ist nicht verfügbar
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ISC073N12LM6ATMA1 Infineon-ISC073N12LM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c850f4bee0185c27a53ca5378
ISC073N12LM6ATMA1
Hersteller: Infineon Technologies
Description: OPTIMOS 6 POWER-TRANSISTOR,120V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.4A (Ta), 86A (Tc)
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 40A, 10V
Power Dissipation (Max): 3W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 50µA
Supplier Device Package: PG-TDSON-8
Drive Voltage (Max Rds On, Min Rds On): 3.3V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 60 V
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10+4.02 EUR
100+2.8 EUR
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CY8C4125LQI-483 Infineon-PSoC_4_PSoC_4100_Family-DataSheet-v12_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec86cc240d7&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY8C4125LQI-483
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 32KB FLASH 40QFN
Packaging: Bulk
Package / Case: 40-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 8x12b SAR; D/A 2xIDAC
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 40-QFN (6x6)
Number of I/O: 34
DigiKey Programmable: Not Verified
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CY8C4146LQE-S423
CY8C4146LQE-S423
Hersteller: Infineon Technologies
Description: PSOC4 - GENERAL
Packaging: Tray
Package / Case: 40-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b, 12x12b SAR; D/A 2x7b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 40-QFN (6x6)
Grade: Automotive
Number of I/O: 34
Qualification: AEC-Q100
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980+9.69 EUR
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S25FL256SAGBHIA03 001-98283%20Rev%20T.pdf
S25FL256SAGBHIA03
Hersteller: Infineon Technologies
Description: IC FLASH 256MBIT SPI/QUAD 24BGA
Packaging: Tape & Reel (TR)
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (8x6)
Memory Interface: SPI - Quad I/O
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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S25FL256SAGBHIA03 001-98283%20Rev%20T.pdf
S25FL256SAGBHIA03
Hersteller: Infineon Technologies
Description: IC FLASH 256MBIT SPI/QUAD 24BGA
Packaging: Cut Tape (CT)
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (8x6)
Memory Interface: SPI - Quad I/O
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
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3+8.27 EUR
10+7.7 EUR
25+7.47 EUR
50+7.29 EUR
100+7.13 EUR
250+6.9 EUR
500+6.72 EUR
1000+6.56 EUR
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IPP65R420CFDXKSA2 Infineon-IPX65R420CFD-DataSheet-v02_06-EN.pdf?fileId=8ac78c8c82ce56640182d510b9ad5997
IPP65R420CFDXKSA2
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 8.7A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.7A (Tc)
Rds On (Max) @ Id, Vgs: 420mOhm @ 3.4A, 10V
Power Dissipation (Max): 83.3W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 300µA
Supplier Device Package: PG-TO220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 31.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 100 V
auf Bestellung 488 Stücke:
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5+4.33 EUR
50+2.12 EUR
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IPP65R310CFDXKSA2 Infineon-IPX65R310CFD-DS-v02_03-en[1].pdf?fileId=db3a30432f91014f012f9caff105741c
IPP65R310CFDXKSA2
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 11.4A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.4A (Tc)
Rds On (Max) @ Id, Vgs: 310mOhm @ 4.4A, 10V
Power Dissipation (Max): 104.2W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 400µA
Supplier Device Package: PG-TO220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V
auf Bestellung 236 Stücke:
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5+5.09 EUR
50+2.52 EUR
100+2.27 EUR
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IPP65R110CFDXKSA2 Infineon-IPX65R110CFD-DS-v02_06-en.pdf?fileId=db3a30433004641301306abd8e2041b1
IPP65R110CFDXKSA2
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 31.2A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31.2A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 12.7A, 10V
Power Dissipation (Max): 277.8W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.3mA
Supplier Device Package: PG-TO220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 118 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3240 pF @ 100 V
auf Bestellung 490 Stücke:
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2+12.35 EUR
50+6.56 EUR
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AUIRFR3504TRL AUIRFR3504.pdf
AUIRFR3504TRL
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 56A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 9.2mOhm @ 30A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BSP129L6327HTSA1 Infineon-BSP129-DS-v01_42-en.pdf?fileId=db3a30433c1a8752013c1fc296d2395f
BSP129L6327HTSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 240V 350MA SOT223-4
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
Rds On (Max) @ Id, Vgs: 6Ohm @ 350mA, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 1V @ 108µA
Supplier Device Package: PG-SOT223-4-21
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 240 V
Gate Charge (Qg) (Max) @ Vgs: 5.7 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 108 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 236388 Stücke:
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AnzahlPrivatkunde
709+0.77 EUR
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TLE49161KHTSA1 TLE4916-1K_FinalDS_Rev1.0.pdf?folderId=db3a30431689f4420116a096e1db033e&fileId=db3a304327b8975001281b98f40d1aeb
TLE49161KHTSA1
Hersteller: Infineon Technologies
Description: MAGNETIC SWITCH LATCH SC59
Features: Temperature Compensated
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Open Drain
Polarization: South Pole
Mounting Type: Surface Mount
Function: Latch
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 2.4V ~ 5V
Technology: Hall Effect
Sensing Range: 5mT Trip, -5mT Release
Current - Output (Max): 2mA
Current - Supply (Max): 10µA
Supplier Device Package: PG-SC59-3
Test Condition: 25°C
Produkt ist nicht verfügbar
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IR2155PBF ir2155.pdf?fileId=5546d462533600a4015355c8dec316b6
IR2155PBF
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: RC Input Circuit
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 80ns, 45ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Current - Peak Output (Source, Sink): 250mA, 500mA
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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BCR129E6327HTSA1 bcr129series.pdf?folderId=db3a30431400ef68011406f3ddb1012e&fileId=db3a30431428a37301143f7ab7820287
BCR129E6327HTSA1
Hersteller: Infineon Technologies
Description: TRANS PREBIAS NPN 50V SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V
Supplier Device Package: PG-SOT23
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 150 MHz
Resistor - Base (R1): 10 kOhms
Resistors Included: R1 Only
auf Bestellung 214700 Stücke:
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AnzahlPrivatkunde
4340+0.12 EUR
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BCR129WH6327XTSA1 bcr129series.pdf?folderId=db3a30431400ef68011406f3ddb1012e&fileId=db3a30431428a37301143f7ab7820287
BCR129WH6327XTSA1
Hersteller: Infineon Technologies
Description: TRANS PREBIAS NPN 50V SOT323
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V
Supplier Device Package: PG-SOT323
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 150 MHz
Resistor - Base (R1): 10 kOhms
Resistors Included: R1 Only
auf Bestellung 432000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5854+0.09 EUR
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BCR129SH6327XTSA1 bcr129series.pdf?folderId=db3a30431400ef68011406f3ddb1012e&fileId=db3a30431428a37301143f7ab7820287
BCR129SH6327XTSA1
Hersteller: Infineon Technologies
Description: TRANS PREBIAS 2NPN 50V SOT363
Packaging: Bulk
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V
Frequency - Transition: 150MHz
Resistor - Base (R1): 10kOhms
Supplier Device Package: PG-SOT363-PO
auf Bestellung 20300 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2592+0.21 EUR
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IR38060MGM18TRP Infineon-IR38060M-DS-v03_84-EN.pdf?fileId=5546d4625c167129015c3291ea9a4cee
Hersteller: Infineon Technologies
Description: IC REG DC-DC 35IQFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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