Produkte > INFINEON TECHNOLOGIES > Alle Produkte des Herstellers INFINEON TECHNOLOGIES (149788) > Seite 683 nach 2497

Wählen Sie Seite:   [  << Vorherige Seite ]  1 249 498 678 679 680 681 682 683 684 685 686 687 688 747 996 1245 1494 1743 1992 2241 2490 2497  [ Nächste Seite >> ]
Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
6MS16017P43W40382NOSA1 6MS16017P43W40382NOSA1 Infineon Technologies Infineon-6MS16017P43W40382-DS-v02_00-EN.pdf?fileId=5546d462525dbac40152cace8ab36459 Description: IGBT MODULE 1700V 880A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -25°C ~ 55°C
NTC Thermistor: Yes
Supplier Device Package: Module
Voltage - Collector Emitter Breakdown (Max): 1700 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AUIRFZ44ZS AUIRFZ44ZS Infineon Technologies auirfz44z.pdf?fileId=5546d462533600a4015355b9f8771509 Description: MOSFET N-CH 55V 51A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
Rds On (Max) @ Id, Vgs: 13.9mOhm @ 31A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1420 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
D711N60TXPSA1 D711N60TXPSA1 Infineon Technologies Infineon-D711N-DS-v8_1-en_de.pdf?fileId=db3a304412b407950112b42f99154c5f Description: DIODE GEN PURP 6KV 1070A
Packaging: Tray
Package / Case: DO-200AB, B-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1070A
Operating Temperature - Junction: -40°C ~ 160°C
Voltage - DC Reverse (Vr) (Max): 6000 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 1200 A
Current - Reverse Leakage @ Vr: 50 mA @ 6000 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BCV 28 E6327 BCV 28 E6327 Infineon Technologies BCV28_48.pdf Description: TRANS PNP DARL 30V 0.5A PG-SOT89
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 100µA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 100mA, 5V
Frequency - Transition: 200MHz
Supplier Device Package: PG-SOT89
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 1 W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BCV 28 E6327 BCV 28 E6327 Infineon Technologies BCV28_48.pdf Description: TRANS PNP DARL 30V 0.5A PG-SOT89
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 100µA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 100mA, 5V
Frequency - Transition: 200MHz
Supplier Device Package: PG-SOT89
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 1 W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFR15N20DPBF IRFR15N20DPBF Infineon Technologies irfr15n20dpbf.pdf description Description: MOSFET N-CH 200V 17A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 10A, 10V
Power Dissipation (Max): 3W (Ta), 140W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 910 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AIKBE50N65RF5ATMA1 AIKBE50N65RF5ATMA1 Infineon Technologies Infineon-AIKBE50N65RF5-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8b6555fe018be5aabe714146 Description: IGBT TRENCH FS 650V 96A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
Supplier Device Package: PG-TO263-7-U04
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 16.8ns/136ns
Switching Energy: 120µJ (on), 90µJ (off)
Test Condition: 400V, 25A, 9Ohm, 15V
Gate Charge: 108 nC
Grade: Automotive
Current - Collector (Ic) (Max): 96 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 326 W
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AIKBE50N65RF5ATMA1 AIKBE50N65RF5ATMA1 Infineon Technologies Infineon-AIKBE50N65RF5-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8b6555fe018be5aabe714146 Description: IGBT TRENCH FS 650V 96A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
Supplier Device Package: PG-TO263-7-U04
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 16.8ns/136ns
Switching Energy: 120µJ (on), 90µJ (off)
Test Condition: 400V, 25A, 9Ohm, 15V
Gate Charge: 108 nC
Grade: Automotive
Current - Collector (Ic) (Max): 96 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 326 W
Qualification: AEC-Q101
auf Bestellung 516 Stücke:
Lieferzeit 10-14 Tag (e)
2+14.08 EUR
10+9.66 EUR
100+7.76 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
IMW120R140M1HXKSA1 IMW120R140M1HXKSA1 Infineon Technologies Infineon-IMW120R140M1H-DS-v01_01-EN.pdf?fileId=5546d46269e1c019016a92fdf712669d Description: SICFET N-CH 1.2KV 19A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 182mOhm @ 6A, 18V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 2.5mA
Supplier Device Package: PG-TO247-3-41
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 454 pF @ 800 V
auf Bestellung 113 Stücke:
Lieferzeit 10-14 Tag (e)
2+11.46 EUR
30+6.26 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
TPM9673FW2613RPIEBTOBO1 TPM9673FW2613RPIEBTOBO1 Infineon Technologies Infineon-OPTIGA_TPM_SLB_9673_RPi-DataSheet-v01_02-EN.pdf?fileId=8ac78c8c8779172a0187ed7465fa19e8 Description: OPTIGA TPM 9673 RPI EVAL
Packaging: Bulk
Function: Trusted Platform Module (TPM)
Type: Interface
Contents: Board(s)
Utilized IC / Part: SLB 9673
Platform: Raspberry Pi
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SPOC2DBBTS722204ESPTOBO1 SPOC2DBBTS722204ESPTOBO1 Infineon Technologies Description: SPOC-2 DB BTS72220-4ESP
Packaging: Bulk
Function: Switch
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BTS72220-4ESP
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
1+117.11 EUR
Im Einkaufswagen  Stück im Wert von  UAH
STT3400N16P76XPSA1 STT3400N16P76XPSA1 Infineon Technologies Description: THYR / DIODE MODULE DK
Packaging: Tray
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPP073N13NM6AKSA1 IPP073N13NM6AKSA1 Infineon Technologies IPP073N13NM6_Rev2.0_10-16-23.pdf Description: TRENCH >=100V
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 98A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 40A, 15V
Power Dissipation (Max): 3.8W (Ta), 158W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 73µA
Supplier Device Package: PG-TO220-3-1
Drive Voltage (Max Rds On, Min Rds On): 8V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 135 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 68 V
auf Bestellung 445 Stücke:
Lieferzeit 10-14 Tag (e)
5+4.31 EUR
50+2.33 EUR
100+2.3 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
IPP014N08NM6AKSA1 Infineon Technologies Description: TRENCH 40<-<100V
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPP022N12NM6AKSA1 IPP022N12NM6AKSA1 Infineon Technologies Infineon-IPP022N12NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8b6555fe018becc82fed4e78 Description: TRENCH >=100V
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 203A (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 100A, 10V
Power Dissipation (Max): 3.8W (Ta), 395W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 275µA
Supplier Device Package: PG-TO220-3-1
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 141 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 60 V
auf Bestellung 947 Stücke:
Lieferzeit 10-14 Tag (e)
2+12.51 EUR
10+8.5 EUR
100+6.23 EUR
500+5.5 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
IPP069N20NM6AKSA1 IPP069N20NM6AKSA1 Infineon Technologies Infineon-IPP069N20NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8d2fe47b018d327da1ee0f07 Description: TRENCH >=100V
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.3A (Ta), 136A (Tc)
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 100A, 15V
Power Dissipation (Max): 3.8W (Ta), 300W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 258µA
Supplier Device Package: PG-TO220-3-1
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7400 pF @ 100 V
auf Bestellung 580 Stücke:
Lieferzeit 10-14 Tag (e)
2+12.28 EUR
50+7.37 EUR
100+6.9 EUR
500+6.56 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
IRF3205ZPBFAKSA1 IRF3205ZPBFAKSA1 Infineon Technologies infineon-irf3205z-datasheet-en.pdf?fileId=5546d462533600a4015355df030c190f Description: TRENCH 40<-<100V
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 66A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PG-TO220-3-904
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3450 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AUIRFS4127TRL AUIRFS4127TRL Infineon Technologies auirfs4127.pdf?fileId=5546d462533600a4015355b6cec114cd Description: MOSFET N-CH 200V 72A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 44A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PG-TO263-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5380 pF @ 50 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TT122N22KOFHPSA1 Infineon Technologies Infineon-TT122N-DS-v01_00-en_de.pdf?fileId=db3a304412b407950112b42fde7a4e10 Description: SCR MODULE 2.2KV 160A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 140°C
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 200 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 1050A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 104 A
Voltage - Gate Trigger (Vgt) (Max): 1.4 V
Current - On State (It (RMS)) (Max): 160 A
Voltage - Off State: 2.2 kV
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AUIRFR024N AUIRFR024N Infineon Technologies AUIRF%28R%2CU%29024N.pdf Description: MOSFET N-CH 55V 17A TO252AA
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 10A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRLB3034PBFXKMA1 IRLB3034PBFXKMA1 Infineon Technologies Infineon-IRLB3034-DataSheet-v01_01-EN.pdf?fileId=5546d462533600a40153566027b22585 Description: TRENCH <= 40V
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 195A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 162 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 10315 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPI020N06NAKSA1 IPI020N06NAKSA1 Infineon Technologies IPI020N06N.pdf Description: MOSFET N-CH 60V 29A/120A TO262
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 120A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 100A, 10V
Power Dissipation (Max): 3W (Ta), 214W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 143µA
Supplier Device Package: PG-TO262-3-1
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7800 pF @ 30 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRSM836-035MA IRSM836-035MA Infineon Technologies Infineon-IRSM836-035MA-DS-v01_01-EN.pdf?fileId=5546d46256fb43b3015765e044797e62 Description: IC MTR DRIVER 13.5V-16.5V 36PQFN
Packaging: Tray
Package / Case: 36-PowerVQFN
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 3A
Interface: Parallel
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 13.5V ~ 16.5V
Applications: Appliance
Technology: UMOS
Voltage - Load: 400V (Max)
Supplier Device Package: 36-PQFN (12x12)
Motor Type - AC, DC: AC, Synchronous
auf Bestellung 495 Stücke:
Lieferzeit 10-14 Tag (e)
2+16.37 EUR
10+14.78 EUR
25+14.09 EUR
160+12.23 EUR
320+11.68 EUR
480+10.65 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
IRSM836-035MATR IRSM836-035MATR Infineon Technologies Infineon-IRSM836-035MA-DS-v01_01-EN.pdf?fileId=5546d46256fb43b3015765e044797e62 Description: IC MTR DRIVER 13.5V-16.5V 36PQFN
Packaging: Tape & Reel (TR)
Package / Case: 36-PowerVQFN
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 3A
Interface: Parallel
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 13.5V ~ 16.5V
Applications: Appliance
Technology: UMOS
Voltage - Load: 400V (Max)
Supplier Device Package: 36-PQFN (12x12)
Motor Type - AC, DC: AC, Synchronous
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRSM836-035MATR IRSM836-035MATR Infineon Technologies Infineon-IRSM836-035MA-DS-v01_01-EN.pdf?fileId=5546d46256fb43b3015765e044797e62 Description: IC MTR DRIVER 13.5V-16.5V 36PQFN
Packaging: Cut Tape (CT)
Package / Case: 36-PowerVQFN
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 3A
Interface: Parallel
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 13.5V ~ 16.5V
Applications: Appliance
Technology: UMOS
Voltage - Load: 400V (Max)
Supplier Device Package: 36-PQFN (12x12)
Motor Type - AC, DC: AC, Synchronous
auf Bestellung 1975 Stücke:
Lieferzeit 10-14 Tag (e)
2+16.37 EUR
10+14.78 EUR
25+14.09 EUR
100+12.23 EUR
250+11.68 EUR
500+10.65 EUR
1000+9.28 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
IRFB4019PBFXKMA1 IRFB4019PBFXKMA1 Infineon Technologies infineon-irfb4019-datasheet-en.pdf?fileId=5546d462533600a40153561587651e03 Description: TRENCH >=100V
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 10A, 10V
Power Dissipation (Max): 80W (Tj)
Vgs(th) (Max) @ Id: 4.9V @ 50µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 50 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S25FL128SAGMFIR03 S25FL128SAGMFIR03 Infineon Technologies Infineon-S25FL128S_S25FL256S_128_Mb_(16_MB)_256_Mb_(32_MB)_3.0V_SPI_Flash_Memory-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecfb6a64a17 Description: IC FLASH 128MBIT SPI/QUAD 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Memory Interface: SPI - Quad I/O
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
auf Bestellung 1450 Stücke:
Lieferzeit 10-14 Tag (e)
1450+5.98 EUR
Mindestbestellmenge: 1450
Im Einkaufswagen  Stück im Wert von  UAH
S25FL128SAGMFIR03 S25FL128SAGMFIR03 Infineon Technologies Infineon-S25FL128S_S25FL256S_128_Mb_(16_MB)_256_Mb_(32_MB)_3.0V_SPI_Flash_Memory-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecfb6a64a17 Description: IC FLASH 128MBIT SPI/QUAD 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Memory Interface: SPI - Quad I/O
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
auf Bestellung 1494 Stücke:
Lieferzeit 10-14 Tag (e)
3+8.73 EUR
10+7.74 EUR
25+7.38 EUR
50+7.12 EUR
100+6.87 EUR
250+6.55 EUR
500+6.32 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
S25FL128SAGMFM003 S25FL128SAGMFM003 Infineon Technologies Infineon-S25FL128S_S25FL256S_128_Mb_(16_MB)_256_Mb_(32_MB)_3.0V_SPI_Flash_Memory-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecfb6a64a17 Description: IC FLASH 128MBIT SPI/QUAD 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Grade: Automotive
Memory Interface: SPI - Quad I/O
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S25FL128SAGMFM003 S25FL128SAGMFM003 Infineon Technologies Infineon-S25FL128S_S25FL256S_128_Mb_(16_MB)_256_Mb_(32_MB)_3.0V_SPI_Flash_Memory-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecfb6a64a17 Description: IC FLASH 128MBIT SPI/QUAD 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Grade: Automotive
Memory Interface: SPI - Quad I/O
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
auf Bestellung 1170 Stücke:
Lieferzeit 10-14 Tag (e)
2+12.5 EUR
10+11.09 EUR
25+10.57 EUR
50+10.2 EUR
100+9.84 EUR
250+9.38 EUR
500+9.05 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
IRGB4060DPBF IRGB4060DPBF Infineon Technologies IRGB4060DPBF.pdf description Description: IGBT TRENCH 600V 16A TO-220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 60 ns
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 8A
Supplier Device Package: TO-220AB
IGBT Type: Trench
Td (on/off) @ 25°C: 30ns/95ns
Switching Energy: 70µJ (on), 145µJ (off)
Test Condition: 400V, 8A, 47Ohm, 15V
Gate Charge: 19 nC
Current - Collector (Ic) (Max): 16 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 32 A
Power - Max: 99 W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF7380TRPBFXTMA1 Infineon Technologies Description: PLANAR 40<-<100V
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPWS65R022CFD7AXKSA1 Infineon Technologies Infineon-IPWS65R022CFD7A-DataSheet-v02_00-EN.pdf?fileId=5546d46279cccfdb0179cce005c602d8 Description: AUTOMOTIVE_COOLMOS PG-TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 96A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 58.2A, 10V
Power Dissipation (Max): 446W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 2.91mA
Supplier Device Package: PG-TO247-3-31
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 234 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11659 pF @ 400 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AIDW10S65C5XKSA1 AIDW10S65C5XKSA1 Infineon Technologies Infineon-AIDW10S65C5-DS-v01_03-EN.pdf?fileId=5546d462675a6972016773c2e5c35686 Description: DIODE SIL CARB 650V 10A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 303pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: PG-TO247-3-41
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 60 µA @ 650 V
Qualification: AEC-Q100/101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PEF4268TV1.1 Infineon Technologies Description: DUSLIC: SUBSCRIBER LINE INTERFAC
Packaging: Bulk
auf Bestellung 13000 Stücke:
Lieferzeit 10-14 Tag (e)
91+5.35 EUR
Mindestbestellmenge: 91
Im Einkaufswagen  Stück im Wert von  UAH
PEB4264TV1.1GD Infineon Technologies Description: DUSLIC DUAL CHANNEL SLIC
Packaging: Bulk
auf Bestellung 141600 Stücke:
Lieferzeit 10-14 Tag (e)
78+6.23 EUR
Mindestbestellmenge: 78
Im Einkaufswagen  Stück im Wert von  UAH
PEB4264-2TV1.1GD Infineon Technologies Description: DUSLIC DUAL CHANNEL SLIC
Packaging: Bulk
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
64+7.57 EUR
Mindestbestellmenge: 64
Im Einkaufswagen  Stück im Wert von  UAH
IRF9952TRPBFXTMA1 Infineon Technologies Description: PLANAR 40<-<100V
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
XDPS2110XUMA1 Infineon Technologies Description: IC MCU
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
2500+1.88 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
XDPS2110XUMA1 Infineon Technologies Description: IC MCU
Packaging: Cut Tape (CT)
DigiKey Programmable: Not Verified
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
5+4 EUR
10+2.86 EUR
25+2.58 EUR
100+2.27 EUR
250+2.12 EUR
500+2.03 EUR
1000+1.96 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
IRFB4110PBFXKMA1 IRFB4110PBFXKMA1 Infineon Technologies Infineon-IRFB4110-DataSheet-v01_01-EN.pdf?fileId=5546d462533600a401535615a9571e0b Description: TRENCH >=100V
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 75A, 10V
Power Dissipation (Max): 370W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9620 pF @ 50 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
4+4.61 EUR
50+2.24 EUR
100+2.08 EUR
500+1.69 EUR
1000+1.56 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
PEB 3324 HL V1.4 PEB 3324 HL V1.4 Infineon Technologies PEB%2C%20PEF%2033xx.pdf Description: IC TELECOM INTERFACE 176-LQFP
Packaging: Tray
Package / Case: 176-LQFP
Mounting Type: Surface Mount
Function: Analog Voice Access
Interface: ADPCM
Operating Temperature: -40°C ~ 85°C
Supplier Device Package: PG-LQFP-176-2
Number of Circuits: 4
Power (Watts): 400 mW
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PEF 3304 HL V2.1 PEF 3304 HL V2.1 Infineon Technologies PEB%2C%20PEF%2033xx.pdf Description: IC TELECOM INTERFACE 176-LQFP
Packaging: Tray
Package / Case: 176-LQFP
Mounting Type: Surface Mount
Function: Analog Voice Access
Interface: JTAG, PCM, SCI/SPI
Operating Temperature: -40°C ~ 85°C
Supplier Device Package: PG-LQFP-176-2
Number of Circuits: 4
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S25HS512TFAMHM013 Infineon Technologies en?dcId=8a8181663431cb50013431cb500b0000&downloadTitle=Infineon-S25HS256T_S25HS512T_S25HS01GT_S25HL256T_S25HL512T_S25HL01GT_256Mb_512Mb_1Gb_SEMPER_TM_Flash_Quad_SPI_1_8V_3-DataSheet-v68_00-EN.pdf&download=L2RnZGwvSW5maW5lb24 Description: IC FLASH 512MBIT SPI/QUAD 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR (SLC)
Clock Frequency: 166 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTN9960LVAUMA1 BTN9960LVAUMA1 Infineon Technologies Infineon-BTN9960LV-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8779172a0187c23124385ebb Description: DC_MOTOR_CONTROL
Packaging: Tape & Reel (TR)
Package / Case: 7-PowerSFN
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Interface: PWM
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 4.5V ~ 40V
Applications: General Purpose
Technology: DMOS
Voltage - Load: 4.5V ~ 40V
Supplier Device Package: PG-HSOF-7-1
Motor Type - Stepper: Bipolar
Motor Type - AC, DC: Brushed DC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTN9960LVAUMA1 BTN9960LVAUMA1 Infineon Technologies Infineon-BTN9960LV-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8779172a0187c23124385ebb Description: DC_MOTOR_CONTROL
Packaging: Cut Tape (CT)
Package / Case: 7-PowerSFN
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Interface: PWM
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 4.5V ~ 40V
Applications: General Purpose
Technology: DMOS
Voltage - Load: 4.5V ~ 40V
Supplier Device Package: PG-HSOF-7-1
Motor Type - Stepper: Bipolar
Motor Type - AC, DC: Brushed DC
auf Bestellung 519 Stücke:
Lieferzeit 10-14 Tag (e)
4+5.46 EUR
10+4.12 EUR
25+3.78 EUR
100+3.41 EUR
250+3.23 EUR
500+3.13 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
DCSHIELDBTN9960LVTOBO1 DCSHIELDBTN9960LVTOBO1 Infineon Technologies Infineon-User_Manual_BTN9960_BTN9970_BTN9990_Motor_control_shield-UserManual-v02_00-EN.pdf?fileId=8ac78c8c88ae21230188e2e795766aae Description: EVAL FOR BTN9960
Packaging: Bulk
Function: Motor Controller/Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BTN9960
Platform: Arduino
auf Bestellung 6 Stücke:
Lieferzeit 10-14 Tag (e)
1+118.04 EUR
Im Einkaufswagen  Stück im Wert von  UAH
TLE49642KXTSA1 TLE49642KXTSA1 Infineon Technologies Infineon-TLE4964_2K-DS-v01_00-en.pdf?fileId=db3a3043397219b60139725a64720065 Description: MAGNETIC SWITCH UNIPOLAR SC59
Features: Temperature Compensated
Packaging: Tape & Reel (TR)
Output Type: Open Drain
Polarization: South Pole
Function: Unipolar Switch
Operating Temperature: -40°C ~ 170°C (TJ)
Voltage - Supply: 3V ~ 32V
Technology: Hall Effect
Sensing Range: 28mT Trip, 22.5mT Release
Current - Output (Max): 25mA
Current - Supply (Max): 2.5mA
Test Condition: 25°C
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLE49642KXTSA1 TLE49642KXTSA1 Infineon Technologies Infineon-TLE4964_2K-DS-v01_00-en.pdf?fileId=db3a3043397219b60139725a64720065 Description: MAGNETIC SWITCH UNIPOLAR SC59
Features: Temperature Compensated
Packaging: Cut Tape (CT)
Output Type: Open Drain
Polarization: South Pole
Function: Unipolar Switch
Operating Temperature: -40°C ~ 170°C (TJ)
Voltage - Supply: 3V ~ 32V
Technology: Hall Effect
Sensing Range: 28mT Trip, 22.5mT Release
Current - Output (Max): 25mA
Current - Supply (Max): 2.5mA
Test Condition: 25°C
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 2998 Stücke:
Lieferzeit 10-14 Tag (e)
13+1.43 EUR
17+1.08 EUR
25+0.93 EUR
50+0.9 EUR
100+0.76 EUR
500+0.66 EUR
1000+0.58 EUR
Mindestbestellmenge: 13
Im Einkaufswagen  Stück im Wert von  UAH
IRF7465TRPBFXTMA1 IRF7465TRPBFXTMA1 Infineon Technologies Description: PLANAR 40<-<100V
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.9A (Ta)
Rds On (Max) @ Id, Vgs: 280mOhm @ 1.14A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFB3077PBFXKMA1 IRFB3077PBFXKMA1 Infineon Technologies Infineon-IRFB3077-DataSheet-v01_01-EN.pdf?fileId=5546d462533600a4015356153f0d1def Description: TRENCH 40<-<100V
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 75A, 10V
Power Dissipation (Max): 370W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PG-TO220-3-904
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9400 pF @ 50 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFP3006PBFXKMA1 IRFP3006PBFXKMA1 Infineon Technologies Infineon-IRFP3006-DataSheet-v01_01-EN.pdf?fileId=5546d462533600a401535628c4881fec Description: TRENCH 40<-<100V
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 170A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8970 pF @ 50 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFB3607PBFXKMA1 IRFB3607PBFXKMA1 Infineon Technologies infineon-irfs3607-datasheet-en.pdf?fileId=5546d462533600a401535636a42b2176 Description: TRENCH 40<-<100V
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tj)
Rds On (Max) @ Id, Vgs: 9mOhm @ 46A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3070 pF @ 50 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY7C0430BV-100BGC CY7C0430BV-100BGC Infineon Technologies Infineon-CY7C0430BV-SimulationModels-v01_00-EN.pdf?fileId=8ac78c8c7d718a49017d71dae41a0c7e&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC SRAM 1.152MBIT PAR 272PBGA
Packaging: Bag
Package / Case: 272-BGA
Mounting Type: Surface Mount
Memory Size: 1.152Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Quad Port, Synchronous
Clock Frequency: 100 MHz
Memory Format: SRAM
Supplier Device Package: 272-PBGA (27x27)
Memory Interface: Parallel
Memory Organization: 64K x 18
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRG4BC30FPBF IRG4BC30FPBF Infineon Technologies irg4bc30fpbf.pdf?fileId=5546d462533600a40153563fb8192275 description Description: IGBT 600V 31A TO-220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 17A
Supplier Device Package: TO-220AB
Td (on/off) @ 25°C: 21ns/200ns
Switching Energy: 230µJ (on), 1.18mJ (off)
Test Condition: 480V, 17A, 23Ohm, 15V
Gate Charge: 51 nC
Current - Collector (Ic) (Max): 31 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 124 A
Power - Max: 100 W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AUIRGP4062D AUIRGP4062D Infineon Technologies auirgp4062d.pdf?fileId=5546d462533600a4015355ba52cd1521 Description: IGBT 600V 48A TO-247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 89 ns
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 24A
Supplier Device Package: TO-247AC
Td (on/off) @ 25°C: 41ns/104ns
Switching Energy: 115µJ (on), 600µJ (off)
Test Condition: 400V, 24A, 10Ohm, 15V
Gate Charge: 50 nC
Current - Collector (Ic) (Max): 48 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 72 A
Power - Max: 250 W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFB4310ZPBFXKMA1 IRFB4310ZPBFXKMA1 Infineon Technologies infineon-irfs4310z-datasheet-en.pdf?fileId=5546d462533600a4015356161b4d1e2d Description: TRENCH >=100V
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 75A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.037mA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6860 pF @ 50 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
C167CRLMHABXQLA2 Infineon Technologies Description: IC MCU 16BIT ROMLESS 144BQFP
Packaging: Tray
Package / Case: 144-BQFP
Mounting Type: Surface Mount
Speed: 25MHz
RAM Size: 4K x 8
Operating Temperature: 0°C ~ 70°C (TA)
Oscillator Type: External
Program Memory Type: ROMless
Core Processor: C166
Data Converters: A/D 16x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: CANbus, EBI/EMI, SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: P-MQFP-144-8
Number of I/O: 111
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY8C9540A-24PVXI CY8C9540A-24PVXI Infineon Technologies Infineon-CY8C9520A_CY8C9540A_CY8C9560A_20-_40-_and_60-Bit_I_O_Expander_with_EEPROM-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebd16ae2f29&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integr Description: IC XPNDR 100KHZ I2C 48SSOP
Features: EEPROM, POR, PWM, WDT
Packaging: Tube
Package / Case: 48-BSSOP (0.295", 7.50mm Width)
Output Type: Open Drain
Mounting Type: Surface Mount
Interface: I2C
Number of I/O: 40
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 5.25V
Clock Frequency: 100 kHz
Interrupt Output: Yes
Supplier Device Package: 48-SSOP
Current - Output Source/Sink: 10mA, 25mA
DigiKey Programmable: Not Verified
auf Bestellung 115 Stücke:
Lieferzeit 10-14 Tag (e)
2+17.09 EUR
10+13.39 EUR
30+12.31 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
CY8C9540A-24PVXIT CY8C9540A-24PVXIT Infineon Technologies Infineon-CY8C9520A_CY8C9540A_CY8C9560A_20-_40-_and_60-Bit_I_O_Expander_with_EEPROM-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebd16ae2f29&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integr Description: IC XPNDR 100KHZ I2C 48SSOP
Features: EEPROM, POR, PWM, WDT
Packaging: Tape & Reel (TR)
Package / Case: 48-BSSOP (0.295", 7.50mm Width)
Output Type: Open Drain
Mounting Type: Surface Mount
Interface: I2C
Number of I/O: 40
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 5.25V
Clock Frequency: 100 kHz
Interrupt Output: Yes
Supplier Device Package: 48-SSOP
Current - Output Source/Sink: 10mA, 25mA
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
6MS16017P43W40382NOSA1 Infineon-6MS16017P43W40382-DS-v02_00-EN.pdf?fileId=5546d462525dbac40152cace8ab36459
6MS16017P43W40382NOSA1
Hersteller: Infineon Technologies
Description: IGBT MODULE 1700V 880A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -25°C ~ 55°C
NTC Thermistor: Yes
Supplier Device Package: Module
Voltage - Collector Emitter Breakdown (Max): 1700 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AUIRFZ44ZS auirfz44z.pdf?fileId=5546d462533600a4015355b9f8771509
AUIRFZ44ZS
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 51A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
Rds On (Max) @ Id, Vgs: 13.9mOhm @ 31A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1420 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
D711N60TXPSA1 Infineon-D711N-DS-v8_1-en_de.pdf?fileId=db3a304412b407950112b42f99154c5f
D711N60TXPSA1
Hersteller: Infineon Technologies
Description: DIODE GEN PURP 6KV 1070A
Packaging: Tray
Package / Case: DO-200AB, B-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1070A
Operating Temperature - Junction: -40°C ~ 160°C
Voltage - DC Reverse (Vr) (Max): 6000 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 1200 A
Current - Reverse Leakage @ Vr: 50 mA @ 6000 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BCV 28 E6327 BCV28_48.pdf
BCV 28 E6327
Hersteller: Infineon Technologies
Description: TRANS PNP DARL 30V 0.5A PG-SOT89
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 100µA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 100mA, 5V
Frequency - Transition: 200MHz
Supplier Device Package: PG-SOT89
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 1 W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BCV 28 E6327 BCV28_48.pdf
BCV 28 E6327
Hersteller: Infineon Technologies
Description: TRANS PNP DARL 30V 0.5A PG-SOT89
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 100µA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 100mA, 5V
Frequency - Transition: 200MHz
Supplier Device Package: PG-SOT89
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 1 W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFR15N20DPBF description irfr15n20dpbf.pdf
IRFR15N20DPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 200V 17A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 10A, 10V
Power Dissipation (Max): 3W (Ta), 140W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 910 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AIKBE50N65RF5ATMA1 Infineon-AIKBE50N65RF5-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8b6555fe018be5aabe714146
AIKBE50N65RF5ATMA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 650V 96A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
Supplier Device Package: PG-TO263-7-U04
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 16.8ns/136ns
Switching Energy: 120µJ (on), 90µJ (off)
Test Condition: 400V, 25A, 9Ohm, 15V
Gate Charge: 108 nC
Grade: Automotive
Current - Collector (Ic) (Max): 96 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 326 W
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AIKBE50N65RF5ATMA1 Infineon-AIKBE50N65RF5-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8b6555fe018be5aabe714146
AIKBE50N65RF5ATMA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 650V 96A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
Supplier Device Package: PG-TO263-7-U04
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 16.8ns/136ns
Switching Energy: 120µJ (on), 90µJ (off)
Test Condition: 400V, 25A, 9Ohm, 15V
Gate Charge: 108 nC
Grade: Automotive
Current - Collector (Ic) (Max): 96 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 326 W
Qualification: AEC-Q101
auf Bestellung 516 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+14.08 EUR
10+9.66 EUR
100+7.76 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
IMW120R140M1HXKSA1 Infineon-IMW120R140M1H-DS-v01_01-EN.pdf?fileId=5546d46269e1c019016a92fdf712669d
IMW120R140M1HXKSA1
Hersteller: Infineon Technologies
Description: SICFET N-CH 1.2KV 19A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 182mOhm @ 6A, 18V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 2.5mA
Supplier Device Package: PG-TO247-3-41
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 454 pF @ 800 V
auf Bestellung 113 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+11.46 EUR
30+6.26 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
TPM9673FW2613RPIEBTOBO1 Infineon-OPTIGA_TPM_SLB_9673_RPi-DataSheet-v01_02-EN.pdf?fileId=8ac78c8c8779172a0187ed7465fa19e8
TPM9673FW2613RPIEBTOBO1
Hersteller: Infineon Technologies
Description: OPTIGA TPM 9673 RPI EVAL
Packaging: Bulk
Function: Trusted Platform Module (TPM)
Type: Interface
Contents: Board(s)
Utilized IC / Part: SLB 9673
Platform: Raspberry Pi
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SPOC2DBBTS722204ESPTOBO1
SPOC2DBBTS722204ESPTOBO1
Hersteller: Infineon Technologies
Description: SPOC-2 DB BTS72220-4ESP
Packaging: Bulk
Function: Switch
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BTS72220-4ESP
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+117.11 EUR
Im Einkaufswagen  Stück im Wert von  UAH
STT3400N16P76XPSA1
STT3400N16P76XPSA1
Hersteller: Infineon Technologies
Description: THYR / DIODE MODULE DK
Packaging: Tray
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPP073N13NM6AKSA1 IPP073N13NM6_Rev2.0_10-16-23.pdf
IPP073N13NM6AKSA1
Hersteller: Infineon Technologies
Description: TRENCH >=100V
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 98A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 40A, 15V
Power Dissipation (Max): 3.8W (Ta), 158W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 73µA
Supplier Device Package: PG-TO220-3-1
Drive Voltage (Max Rds On, Min Rds On): 8V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 135 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 68 V
auf Bestellung 445 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+4.31 EUR
50+2.33 EUR
100+2.3 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
IPP014N08NM6AKSA1
Hersteller: Infineon Technologies
Description: TRENCH 40<-<100V
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPP022N12NM6AKSA1 Infineon-IPP022N12NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8b6555fe018becc82fed4e78
IPP022N12NM6AKSA1
Hersteller: Infineon Technologies
Description: TRENCH >=100V
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 203A (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 100A, 10V
Power Dissipation (Max): 3.8W (Ta), 395W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 275µA
Supplier Device Package: PG-TO220-3-1
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 141 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 60 V
auf Bestellung 947 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+12.51 EUR
10+8.5 EUR
100+6.23 EUR
500+5.5 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
IPP069N20NM6AKSA1 Infineon-IPP069N20NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8d2fe47b018d327da1ee0f07
IPP069N20NM6AKSA1
Hersteller: Infineon Technologies
Description: TRENCH >=100V
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.3A (Ta), 136A (Tc)
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 100A, 15V
Power Dissipation (Max): 3.8W (Ta), 300W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 258µA
Supplier Device Package: PG-TO220-3-1
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7400 pF @ 100 V
auf Bestellung 580 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+12.28 EUR
50+7.37 EUR
100+6.9 EUR
500+6.56 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
IRF3205ZPBFAKSA1 infineon-irf3205z-datasheet-en.pdf?fileId=5546d462533600a4015355df030c190f
IRF3205ZPBFAKSA1
Hersteller: Infineon Technologies
Description: TRENCH 40<-<100V
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 66A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PG-TO220-3-904
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3450 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AUIRFS4127TRL auirfs4127.pdf?fileId=5546d462533600a4015355b6cec114cd
AUIRFS4127TRL
Hersteller: Infineon Technologies
Description: MOSFET N-CH 200V 72A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 44A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PG-TO263-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5380 pF @ 50 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TT122N22KOFHPSA1 Infineon-TT122N-DS-v01_00-en_de.pdf?fileId=db3a304412b407950112b42fde7a4e10
Hersteller: Infineon Technologies
Description: SCR MODULE 2.2KV 160A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 140°C
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 200 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 1050A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 104 A
Voltage - Gate Trigger (Vgt) (Max): 1.4 V
Current - On State (It (RMS)) (Max): 160 A
Voltage - Off State: 2.2 kV
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AUIRFR024N AUIRF%28R%2CU%29024N.pdf
AUIRFR024N
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 17A TO252AA
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 10A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRLB3034PBFXKMA1 Infineon-IRLB3034-DataSheet-v01_01-EN.pdf?fileId=5546d462533600a40153566027b22585
IRLB3034PBFXKMA1
Hersteller: Infineon Technologies
Description: TRENCH <= 40V
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 195A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 162 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 10315 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPI020N06NAKSA1 IPI020N06N.pdf
IPI020N06NAKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 29A/120A TO262
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 120A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 100A, 10V
Power Dissipation (Max): 3W (Ta), 214W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 143µA
Supplier Device Package: PG-TO262-3-1
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7800 pF @ 30 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRSM836-035MA Infineon-IRSM836-035MA-DS-v01_01-EN.pdf?fileId=5546d46256fb43b3015765e044797e62
IRSM836-035MA
Hersteller: Infineon Technologies
Description: IC MTR DRIVER 13.5V-16.5V 36PQFN
Packaging: Tray
Package / Case: 36-PowerVQFN
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 3A
Interface: Parallel
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 13.5V ~ 16.5V
Applications: Appliance
Technology: UMOS
Voltage - Load: 400V (Max)
Supplier Device Package: 36-PQFN (12x12)
Motor Type - AC, DC: AC, Synchronous
auf Bestellung 495 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+16.37 EUR
10+14.78 EUR
25+14.09 EUR
160+12.23 EUR
320+11.68 EUR
480+10.65 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
IRSM836-035MATR Infineon-IRSM836-035MA-DS-v01_01-EN.pdf?fileId=5546d46256fb43b3015765e044797e62
IRSM836-035MATR
Hersteller: Infineon Technologies
Description: IC MTR DRIVER 13.5V-16.5V 36PQFN
Packaging: Tape & Reel (TR)
Package / Case: 36-PowerVQFN
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 3A
Interface: Parallel
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 13.5V ~ 16.5V
Applications: Appliance
Technology: UMOS
Voltage - Load: 400V (Max)
Supplier Device Package: 36-PQFN (12x12)
Motor Type - AC, DC: AC, Synchronous
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRSM836-035MATR Infineon-IRSM836-035MA-DS-v01_01-EN.pdf?fileId=5546d46256fb43b3015765e044797e62
IRSM836-035MATR
Hersteller: Infineon Technologies
Description: IC MTR DRIVER 13.5V-16.5V 36PQFN
Packaging: Cut Tape (CT)
Package / Case: 36-PowerVQFN
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 3A
Interface: Parallel
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 13.5V ~ 16.5V
Applications: Appliance
Technology: UMOS
Voltage - Load: 400V (Max)
Supplier Device Package: 36-PQFN (12x12)
Motor Type - AC, DC: AC, Synchronous
auf Bestellung 1975 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+16.37 EUR
10+14.78 EUR
25+14.09 EUR
100+12.23 EUR
250+11.68 EUR
500+10.65 EUR
1000+9.28 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
IRFB4019PBFXKMA1 infineon-irfb4019-datasheet-en.pdf?fileId=5546d462533600a40153561587651e03
IRFB4019PBFXKMA1
Hersteller: Infineon Technologies
Description: TRENCH >=100V
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 10A, 10V
Power Dissipation (Max): 80W (Tj)
Vgs(th) (Max) @ Id: 4.9V @ 50µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 50 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S25FL128SAGMFIR03 Infineon-S25FL128S_S25FL256S_128_Mb_(16_MB)_256_Mb_(32_MB)_3.0V_SPI_Flash_Memory-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecfb6a64a17
S25FL128SAGMFIR03
Hersteller: Infineon Technologies
Description: IC FLASH 128MBIT SPI/QUAD 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Memory Interface: SPI - Quad I/O
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
auf Bestellung 1450 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1450+5.98 EUR
Mindestbestellmenge: 1450
Im Einkaufswagen  Stück im Wert von  UAH
S25FL128SAGMFIR03 Infineon-S25FL128S_S25FL256S_128_Mb_(16_MB)_256_Mb_(32_MB)_3.0V_SPI_Flash_Memory-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecfb6a64a17
S25FL128SAGMFIR03
Hersteller: Infineon Technologies
Description: IC FLASH 128MBIT SPI/QUAD 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Memory Interface: SPI - Quad I/O
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
auf Bestellung 1494 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+8.73 EUR
10+7.74 EUR
25+7.38 EUR
50+7.12 EUR
100+6.87 EUR
250+6.55 EUR
500+6.32 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
S25FL128SAGMFM003 Infineon-S25FL128S_S25FL256S_128_Mb_(16_MB)_256_Mb_(32_MB)_3.0V_SPI_Flash_Memory-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecfb6a64a17
S25FL128SAGMFM003
Hersteller: Infineon Technologies
Description: IC FLASH 128MBIT SPI/QUAD 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Grade: Automotive
Memory Interface: SPI - Quad I/O
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S25FL128SAGMFM003 Infineon-S25FL128S_S25FL256S_128_Mb_(16_MB)_256_Mb_(32_MB)_3.0V_SPI_Flash_Memory-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecfb6a64a17
S25FL128SAGMFM003
Hersteller: Infineon Technologies
Description: IC FLASH 128MBIT SPI/QUAD 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Grade: Automotive
Memory Interface: SPI - Quad I/O
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
auf Bestellung 1170 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+12.5 EUR
10+11.09 EUR
25+10.57 EUR
50+10.2 EUR
100+9.84 EUR
250+9.38 EUR
500+9.05 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
IRGB4060DPBF description IRGB4060DPBF.pdf
IRGB4060DPBF
Hersteller: Infineon Technologies
Description: IGBT TRENCH 600V 16A TO-220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 60 ns
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 8A
Supplier Device Package: TO-220AB
IGBT Type: Trench
Td (on/off) @ 25°C: 30ns/95ns
Switching Energy: 70µJ (on), 145µJ (off)
Test Condition: 400V, 8A, 47Ohm, 15V
Gate Charge: 19 nC
Current - Collector (Ic) (Max): 16 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 32 A
Power - Max: 99 W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF7380TRPBFXTMA1
Hersteller: Infineon Technologies
Description: PLANAR 40<-<100V
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPWS65R022CFD7AXKSA1 Infineon-IPWS65R022CFD7A-DataSheet-v02_00-EN.pdf?fileId=5546d46279cccfdb0179cce005c602d8
Hersteller: Infineon Technologies
Description: AUTOMOTIVE_COOLMOS PG-TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 96A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 58.2A, 10V
Power Dissipation (Max): 446W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 2.91mA
Supplier Device Package: PG-TO247-3-31
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 234 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11659 pF @ 400 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AIDW10S65C5XKSA1 Infineon-AIDW10S65C5-DS-v01_03-EN.pdf?fileId=5546d462675a6972016773c2e5c35686
AIDW10S65C5XKSA1
Hersteller: Infineon Technologies
Description: DIODE SIL CARB 650V 10A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 303pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: PG-TO247-3-41
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 60 µA @ 650 V
Qualification: AEC-Q100/101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PEF4268TV1.1
Hersteller: Infineon Technologies
Description: DUSLIC: SUBSCRIBER LINE INTERFAC
Packaging: Bulk
auf Bestellung 13000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
91+5.35 EUR
Mindestbestellmenge: 91
Im Einkaufswagen  Stück im Wert von  UAH
PEB4264TV1.1GD
Hersteller: Infineon Technologies
Description: DUSLIC DUAL CHANNEL SLIC
Packaging: Bulk
auf Bestellung 141600 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
78+6.23 EUR
Mindestbestellmenge: 78
Im Einkaufswagen  Stück im Wert von  UAH
PEB4264-2TV1.1GD
Hersteller: Infineon Technologies
Description: DUSLIC DUAL CHANNEL SLIC
Packaging: Bulk
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
64+7.57 EUR
Mindestbestellmenge: 64
Im Einkaufswagen  Stück im Wert von  UAH
IRF9952TRPBFXTMA1
Hersteller: Infineon Technologies
Description: PLANAR 40<-<100V
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
XDPS2110XUMA1
Hersteller: Infineon Technologies
Description: IC MCU
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+1.88 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
XDPS2110XUMA1
Hersteller: Infineon Technologies
Description: IC MCU
Packaging: Cut Tape (CT)
DigiKey Programmable: Not Verified
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+4 EUR
10+2.86 EUR
25+2.58 EUR
100+2.27 EUR
250+2.12 EUR
500+2.03 EUR
1000+1.96 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
IRFB4110PBFXKMA1 Infineon-IRFB4110-DataSheet-v01_01-EN.pdf?fileId=5546d462533600a401535615a9571e0b
IRFB4110PBFXKMA1
Hersteller: Infineon Technologies
Description: TRENCH >=100V
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 75A, 10V
Power Dissipation (Max): 370W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9620 pF @ 50 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.61 EUR
50+2.24 EUR
100+2.08 EUR
500+1.69 EUR
1000+1.56 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
PEB 3324 HL V1.4 PEB%2C%20PEF%2033xx.pdf
PEB 3324 HL V1.4
Hersteller: Infineon Technologies
Description: IC TELECOM INTERFACE 176-LQFP
Packaging: Tray
Package / Case: 176-LQFP
Mounting Type: Surface Mount
Function: Analog Voice Access
Interface: ADPCM
Operating Temperature: -40°C ~ 85°C
Supplier Device Package: PG-LQFP-176-2
Number of Circuits: 4
Power (Watts): 400 mW
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PEF 3304 HL V2.1 PEB%2C%20PEF%2033xx.pdf
PEF 3304 HL V2.1
Hersteller: Infineon Technologies
Description: IC TELECOM INTERFACE 176-LQFP
Packaging: Tray
Package / Case: 176-LQFP
Mounting Type: Surface Mount
Function: Analog Voice Access
Interface: JTAG, PCM, SCI/SPI
Operating Temperature: -40°C ~ 85°C
Supplier Device Package: PG-LQFP-176-2
Number of Circuits: 4
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S25HS512TFAMHM013 en?dcId=8a8181663431cb50013431cb500b0000&downloadTitle=Infineon-S25HS256T_S25HS512T_S25HS01GT_S25HL256T_S25HL512T_S25HL01GT_256Mb_512Mb_1Gb_SEMPER_TM_Flash_Quad_SPI_1_8V_3-DataSheet-v68_00-EN.pdf&download=L2RnZGwvSW5maW5lb24
Hersteller: Infineon Technologies
Description: IC FLASH 512MBIT SPI/QUAD 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR (SLC)
Clock Frequency: 166 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTN9960LVAUMA1 Infineon-BTN9960LV-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8779172a0187c23124385ebb
BTN9960LVAUMA1
Hersteller: Infineon Technologies
Description: DC_MOTOR_CONTROL
Packaging: Tape & Reel (TR)
Package / Case: 7-PowerSFN
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Interface: PWM
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 4.5V ~ 40V
Applications: General Purpose
Technology: DMOS
Voltage - Load: 4.5V ~ 40V
Supplier Device Package: PG-HSOF-7-1
Motor Type - Stepper: Bipolar
Motor Type - AC, DC: Brushed DC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTN9960LVAUMA1 Infineon-BTN9960LV-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8779172a0187c23124385ebb
BTN9960LVAUMA1
Hersteller: Infineon Technologies
Description: DC_MOTOR_CONTROL
Packaging: Cut Tape (CT)
Package / Case: 7-PowerSFN
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Interface: PWM
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 4.5V ~ 40V
Applications: General Purpose
Technology: DMOS
Voltage - Load: 4.5V ~ 40V
Supplier Device Package: PG-HSOF-7-1
Motor Type - Stepper: Bipolar
Motor Type - AC, DC: Brushed DC
auf Bestellung 519 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.46 EUR
10+4.12 EUR
25+3.78 EUR
100+3.41 EUR
250+3.23 EUR
500+3.13 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
DCSHIELDBTN9960LVTOBO1 Infineon-User_Manual_BTN9960_BTN9970_BTN9990_Motor_control_shield-UserManual-v02_00-EN.pdf?fileId=8ac78c8c88ae21230188e2e795766aae
DCSHIELDBTN9960LVTOBO1
Hersteller: Infineon Technologies
Description: EVAL FOR BTN9960
Packaging: Bulk
Function: Motor Controller/Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BTN9960
Platform: Arduino
auf Bestellung 6 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+118.04 EUR
Im Einkaufswagen  Stück im Wert von  UAH
TLE49642KXTSA1 Infineon-TLE4964_2K-DS-v01_00-en.pdf?fileId=db3a3043397219b60139725a64720065
TLE49642KXTSA1
Hersteller: Infineon Technologies
Description: MAGNETIC SWITCH UNIPOLAR SC59
Features: Temperature Compensated
Packaging: Tape & Reel (TR)
Output Type: Open Drain
Polarization: South Pole
Function: Unipolar Switch
Operating Temperature: -40°C ~ 170°C (TJ)
Voltage - Supply: 3V ~ 32V
Technology: Hall Effect
Sensing Range: 28mT Trip, 22.5mT Release
Current - Output (Max): 25mA
Current - Supply (Max): 2.5mA
Test Condition: 25°C
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLE49642KXTSA1 Infineon-TLE4964_2K-DS-v01_00-en.pdf?fileId=db3a3043397219b60139725a64720065
TLE49642KXTSA1
Hersteller: Infineon Technologies
Description: MAGNETIC SWITCH UNIPOLAR SC59
Features: Temperature Compensated
Packaging: Cut Tape (CT)
Output Type: Open Drain
Polarization: South Pole
Function: Unipolar Switch
Operating Temperature: -40°C ~ 170°C (TJ)
Voltage - Supply: 3V ~ 32V
Technology: Hall Effect
Sensing Range: 28mT Trip, 22.5mT Release
Current - Output (Max): 25mA
Current - Supply (Max): 2.5mA
Test Condition: 25°C
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 2998 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
13+1.43 EUR
17+1.08 EUR
25+0.93 EUR
50+0.9 EUR
100+0.76 EUR
500+0.66 EUR
1000+0.58 EUR
Mindestbestellmenge: 13
Im Einkaufswagen  Stück im Wert von  UAH
IRF7465TRPBFXTMA1
IRF7465TRPBFXTMA1
Hersteller: Infineon Technologies
Description: PLANAR 40<-<100V
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.9A (Ta)
Rds On (Max) @ Id, Vgs: 280mOhm @ 1.14A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFB3077PBFXKMA1 Infineon-IRFB3077-DataSheet-v01_01-EN.pdf?fileId=5546d462533600a4015356153f0d1def
IRFB3077PBFXKMA1
Hersteller: Infineon Technologies
Description: TRENCH 40<-<100V
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 75A, 10V
Power Dissipation (Max): 370W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PG-TO220-3-904
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9400 pF @ 50 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFP3006PBFXKMA1 Infineon-IRFP3006-DataSheet-v01_01-EN.pdf?fileId=5546d462533600a401535628c4881fec
IRFP3006PBFXKMA1
Hersteller: Infineon Technologies
Description: TRENCH 40<-<100V
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 170A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8970 pF @ 50 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFB3607PBFXKMA1 infineon-irfs3607-datasheet-en.pdf?fileId=5546d462533600a401535636a42b2176
IRFB3607PBFXKMA1
Hersteller: Infineon Technologies
Description: TRENCH 40<-<100V
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tj)
Rds On (Max) @ Id, Vgs: 9mOhm @ 46A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3070 pF @ 50 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY7C0430BV-100BGC Infineon-CY7C0430BV-SimulationModels-v01_00-EN.pdf?fileId=8ac78c8c7d718a49017d71dae41a0c7e&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY7C0430BV-100BGC
Hersteller: Infineon Technologies
Description: IC SRAM 1.152MBIT PAR 272PBGA
Packaging: Bag
Package / Case: 272-BGA
Mounting Type: Surface Mount
Memory Size: 1.152Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Quad Port, Synchronous
Clock Frequency: 100 MHz
Memory Format: SRAM
Supplier Device Package: 272-PBGA (27x27)
Memory Interface: Parallel
Memory Organization: 64K x 18
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRG4BC30FPBF description irg4bc30fpbf.pdf?fileId=5546d462533600a40153563fb8192275
IRG4BC30FPBF
Hersteller: Infineon Technologies
Description: IGBT 600V 31A TO-220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 17A
Supplier Device Package: TO-220AB
Td (on/off) @ 25°C: 21ns/200ns
Switching Energy: 230µJ (on), 1.18mJ (off)
Test Condition: 480V, 17A, 23Ohm, 15V
Gate Charge: 51 nC
Current - Collector (Ic) (Max): 31 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 124 A
Power - Max: 100 W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AUIRGP4062D auirgp4062d.pdf?fileId=5546d462533600a4015355ba52cd1521
AUIRGP4062D
Hersteller: Infineon Technologies
Description: IGBT 600V 48A TO-247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 89 ns
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 24A
Supplier Device Package: TO-247AC
Td (on/off) @ 25°C: 41ns/104ns
Switching Energy: 115µJ (on), 600µJ (off)
Test Condition: 400V, 24A, 10Ohm, 15V
Gate Charge: 50 nC
Current - Collector (Ic) (Max): 48 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 72 A
Power - Max: 250 W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFB4310ZPBFXKMA1 infineon-irfs4310z-datasheet-en.pdf?fileId=5546d462533600a4015356161b4d1e2d
IRFB4310ZPBFXKMA1
Hersteller: Infineon Technologies
Description: TRENCH >=100V
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 75A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.037mA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6860 pF @ 50 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
C167CRLMHABXQLA2
Hersteller: Infineon Technologies
Description: IC MCU 16BIT ROMLESS 144BQFP
Packaging: Tray
Package / Case: 144-BQFP
Mounting Type: Surface Mount
Speed: 25MHz
RAM Size: 4K x 8
Operating Temperature: 0°C ~ 70°C (TA)
Oscillator Type: External
Program Memory Type: ROMless
Core Processor: C166
Data Converters: A/D 16x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: CANbus, EBI/EMI, SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: P-MQFP-144-8
Number of I/O: 111
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY8C9540A-24PVXI Infineon-CY8C9520A_CY8C9540A_CY8C9560A_20-_40-_and_60-Bit_I_O_Expander_with_EEPROM-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebd16ae2f29&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integr
CY8C9540A-24PVXI
Hersteller: Infineon Technologies
Description: IC XPNDR 100KHZ I2C 48SSOP
Features: EEPROM, POR, PWM, WDT
Packaging: Tube
Package / Case: 48-BSSOP (0.295", 7.50mm Width)
Output Type: Open Drain
Mounting Type: Surface Mount
Interface: I2C
Number of I/O: 40
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 5.25V
Clock Frequency: 100 kHz
Interrupt Output: Yes
Supplier Device Package: 48-SSOP
Current - Output Source/Sink: 10mA, 25mA
DigiKey Programmable: Not Verified
auf Bestellung 115 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+17.09 EUR
10+13.39 EUR
30+12.31 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
CY8C9540A-24PVXIT Infineon-CY8C9520A_CY8C9540A_CY8C9560A_20-_40-_and_60-Bit_I_O_Expander_with_EEPROM-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebd16ae2f29&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integr
CY8C9540A-24PVXIT
Hersteller: Infineon Technologies
Description: IC XPNDR 100KHZ I2C 48SSOP
Features: EEPROM, POR, PWM, WDT
Packaging: Tape & Reel (TR)
Package / Case: 48-BSSOP (0.295", 7.50mm Width)
Output Type: Open Drain
Mounting Type: Surface Mount
Interface: I2C
Number of I/O: 40
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 5.25V
Clock Frequency: 100 kHz
Interrupt Output: Yes
Supplier Device Package: 48-SSOP
Current - Output Source/Sink: 10mA, 25mA
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
Wählen Sie Seite:   [  << Vorherige Seite ]  1 249 498 678 679 680 681 682 683 684 685 686 687 688 747 996 1245 1494 1743 1992 2241 2490 2497  [ Nächste Seite >> ]