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IRS2183PBF IRS2183PBF Infineon Technologies irs2183.pdf?fileId=5546d462533600a401535676d20c27d8 Description: IC GATE DRVR HALF-BRIDGE 8DIP
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting, Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 40ns, 20ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 1.9A, 2.3A
DigiKey Programmable: Not Verified
auf Bestellung 15745 Stücke:
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102+4.77 EUR
Mindestbestellmenge: 102
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IRS2183PBF IRS2183PBF Infineon Technologies irs2183.pdf?fileId=5546d462533600a401535676d20c27d8 Description: IC GATE DRVR HALF-BRIDGE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting, Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 40ns, 20ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 1.9A, 2.3A
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IRS21834PBF IRS21834PBF Infineon Technologies irs2183.pdf?fileId=5546d462533600a401535676d20c27d8 Description: IC GATE DRVR HALF-BRIDGE 14DIP
Packaging: Bulk
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting, Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 14-DIP
Rise / Fall Time (Typ): 40ns, 20ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 1.9A, 2.3A
DigiKey Programmable: Not Verified
auf Bestellung 7306 Stücke:
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88+5.55 EUR
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IRS21834PBF IRS21834PBF Infineon Technologies irs2183.pdf?fileId=5546d462533600a401535676d20c27d8 Description: IC GATE DRVR HALF-BRIDGE 14DIP
Packaging: Tube
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting, Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 14-DIP
Rise / Fall Time (Typ): 40ns, 20ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 1.9A, 2.3A
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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NAC1081XTMA1 NAC1081XTMA1 Infineon Technologies Infineon-Infineon-NAC1080_NAC1081_DS_v01_03-EN-DataSheet-v01_03-EN.pdf?fileId=8ac78c8c7d718a49017db42a43930b11 Description: CONTACTLESS POWER&SENSOR
Packaging: Cut Tape (CT)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 13.56MHz
Interface: SPI, UART
Type: RFID Reader/Transponder
Operating Temperature: -25°C ~ 85°C (TA)
Voltage - Supply: 2.8V ~ 3.3V
Standards: ISO 14443, NFC
Supplier Device Package: PG-VQFN-32-20
auf Bestellung 4962 Stücke:
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4+5.77 EUR
10+4.35 EUR
25+3.99 EUR
100+3.6 EUR
250+3.41 EUR
500+3.3 EUR
1000+3.2 EUR
2500+3.11 EUR
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BGT24AT2E6433XUMA1 BGT24AT2E6433XUMA1 Infineon Technologies Infineon-BGT24AT2-DS-v03_02-EN.pdf?fileId=5546d46259d9a4bf015a1339f38e0db3 Description: IC RF TXRX 32VQFN
Packaging: Tape & Reel (TR)
Package / Case: 32-PowerVFQFN
Mounting Type: Surface Mount
Frequency: 24GHz
Type: TxRx Only
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 3.3V
Power - Output: 10dBm
Supplier Device Package: PG-VQFN-32-9
Serial Interfaces: SPI
Grade: Automotive
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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KITXMC13BOOT001TOBO1 KITXMC13BOOT001TOBO1 Infineon Technologies Board_Users_Manual_XMC1300_CPU_Card_R2.pdf?folderId=db3a304334fac4c601350a01037e11d2&fileId=db3a30433da5396c013da5d1ef0500b8&ack=t Description: BOOT KIT XMC1300 EVAL BRD
Packaging: Box
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s)
Core Processor: ARM® Cortex®-M0
Utilized IC / Part: XMC1300
Platform: Boot Kit
auf Bestellung 153 Stücke:
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1+57.13 EUR
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CY62167GN18-55BVXI CY62167GN18-55BVXI Infineon Technologies Infineon-CY62167GN18-55BVXIT-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee23ce068b1&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC SRAM 16MBIT PARALLEL 48VFBGA
Packaging: Tray
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 2.2V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-VFBGA (6x8)
Write Cycle Time - Word, Page: 55ns
Memory Interface: Parallel
Access Time: 55 ns
Memory Organization: 2M x 8, 1M x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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4DIR2401HXUMA1 4DIR2401HXUMA1 Infineon Technologies Infineon-Datasheet_ISOFACE(TM)_4DIRx4xxH_family-DataSheet-v01_01-EN.pdf?fileId=8ac78c8c8929aa4d01899cc3b5175436 Description: DGTL ISOLTR 5.7KV 4CH SPI 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Type: SPI
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.7V ~ 6.5V
Data Rate: 40Mbps
Technology: Magnetic Coupling
Voltage - Isolation: 5700Vrms
Inputs - Side 1/Side 2: 2/2
Supplier Device Package: PG-DSO-16-46
Rise / Fall Time (Typ): 4ns, 4ns (Max)
Common Mode Transient Immunity (Min): 100kV/µs
Propagation Delay tpLH / tpHL (Max): 26ns, 26ns
Isolated Power: No
Channel Type: Bidirectional
Pulse Width Distortion (Max): 3ns
Number of Channels: 4
Produkt ist nicht verfügbar
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4DIR2401HXUMA1 4DIR2401HXUMA1 Infineon Technologies Infineon-Datasheet_ISOFACE(TM)_4DIRx4xxH_family-DataSheet-v01_01-EN.pdf?fileId=8ac78c8c8929aa4d01899cc3b5175436 Description: DGTL ISOLTR 5.7KV 4CH SPI 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Type: SPI
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.7V ~ 6.5V
Data Rate: 40Mbps
Technology: Magnetic Coupling
Voltage - Isolation: 5700Vrms
Inputs - Side 1/Side 2: 2/2
Supplier Device Package: PG-DSO-16-46
Rise / Fall Time (Typ): 4ns, 4ns (Max)
Common Mode Transient Immunity (Min): 100kV/µs
Propagation Delay tpLH / tpHL (Max): 26ns, 26ns
Isolated Power: No
Channel Type: Bidirectional
Pulse Width Distortion (Max): 3ns
Number of Channels: 4
auf Bestellung 1485 Stücke:
Lieferzeit 10-14 Tag (e)
5+3.64 EUR
10+2.62 EUR
100+2.02 EUR
500+1.75 EUR
Mindestbestellmenge: 5
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4DIR1420HXUMA1 Infineon Technologies Infineon-Datasheet_ISOFACE(TM)_4DIRx4xxH_family-DataSheet-v01_01-EN.pdf?fileId=8ac78c8c8929aa4d01899cc3b5175436 Description: DIGITAL ISOLATORS
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: SPI
Operating Temperature: -40°C ~ 125°C
Data Rate: 40Mbps
Technology: Capacitive Coupling
Voltage - Isolation: 5700Vrms
Inputs - Side 1/Side 2: 3/1
Supplier Device Package: PG-DSO-16
Propagation Delay tpLH / tpHL (Max): 26ns, 26ns
Isolated Power: No
Channel Type: Bidirectional
Pulse Width Distortion (Max): 15ns
Number of Channels: 4
auf Bestellung 1500 Stücke:
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1500+2.79 EUR
Mindestbestellmenge: 1500
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4DIR1420HXUMA1 Infineon Technologies Infineon-Datasheet_ISOFACE(TM)_4DIRx4xxH_family-DataSheet-v01_01-EN.pdf?fileId=8ac78c8c8929aa4d01899cc3b5175436 Description: DIGITAL ISOLATORS
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: SPI
Operating Temperature: -40°C ~ 125°C
Data Rate: 40Mbps
Technology: Capacitive Coupling
Voltage - Isolation: 5700Vrms
Inputs - Side 1/Side 2: 3/1
Supplier Device Package: PG-DSO-16
Propagation Delay tpLH / tpHL (Max): 26ns, 26ns
Isolated Power: No
Channel Type: Bidirectional
Pulse Width Distortion (Max): 15ns
Number of Channels: 4
auf Bestellung 1500 Stücke:
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3+6.23 EUR
10+4.4 EUR
100+3.6 EUR
500+3.04 EUR
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4DIR2400HXUMA1 4DIR2400HXUMA1 Infineon Technologies Infineon-Datasheet_ISOFACE(TM)_4DIRx4xxH_family-DataSheet-v01_01-EN.pdf?fileId=8ac78c8c8929aa4d01899cc3b5175436 Description: DGTL ISOLTR 5.7KV 4CH SPI 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Type: SPI
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.7V ~ 6.5V
Data Rate: 40Mbps
Technology: Magnetic Coupling
Voltage - Isolation: 5700Vrms
Inputs - Side 1/Side 2: 2/2
Supplier Device Package: PG-DSO-16-46
Rise / Fall Time (Typ): 4ns, 4ns (Max)
Common Mode Transient Immunity (Min): 100kV/µs
Propagation Delay tpLH / tpHL (Max): 26ns, 26ns
Isolated Power: No
Channel Type: Bidirectional
Pulse Width Distortion (Max): 3ns
Number of Channels: 4
Produkt ist nicht verfügbar
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4DIR2400HXUMA1 4DIR2400HXUMA1 Infineon Technologies Infineon-Datasheet_ISOFACE(TM)_4DIRx4xxH_family-DataSheet-v01_01-EN.pdf?fileId=8ac78c8c8929aa4d01899cc3b5175436 Description: DGTL ISOLTR 5.7KV 4CH SPI 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Type: SPI
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.7V ~ 6.5V
Data Rate: 40Mbps
Technology: Magnetic Coupling
Voltage - Isolation: 5700Vrms
Inputs - Side 1/Side 2: 2/2
Supplier Device Package: PG-DSO-16-46
Rise / Fall Time (Typ): 4ns, 4ns (Max)
Common Mode Transient Immunity (Min): 100kV/µs
Propagation Delay tpLH / tpHL (Max): 26ns, 26ns
Isolated Power: No
Channel Type: Bidirectional
Pulse Width Distortion (Max): 3ns
Number of Channels: 4
auf Bestellung 1383 Stücke:
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5+3.63 EUR
10+2.61 EUR
100+2.01 EUR
500+1.74 EUR
Mindestbestellmenge: 5
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4DIR1421HXUMA1 Infineon Technologies Infineon-Datasheet_ISOFACE(TM)_4DIRx4xxH_family-DataSheet-v01_01-EN.pdf?fileId=8ac78c8c8929aa4d01899cc3b5175436 Description: DIGITAL ISOLATORS
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: SPI
Operating Temperature: -40°C ~ 125°C
Data Rate: 40Mbps
Technology: Capacitive Coupling
Voltage - Isolation: 5700Vrms
Inputs - Side 1/Side 2: 3/1
Supplier Device Package: PG-DSO-16
Propagation Delay tpLH / tpHL (Max): 26ns, 26ns
Isolated Power: No
Channel Type: Bidirectional
Pulse Width Distortion (Max): 15ns
Number of Channels: 4
auf Bestellung 1500 Stücke:
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1500+2.68 EUR
Mindestbestellmenge: 1500
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4DIR1421HXUMA1 Infineon Technologies Infineon-Datasheet_ISOFACE(TM)_4DIRx4xxH_family-DataSheet-v01_01-EN.pdf?fileId=8ac78c8c8929aa4d01899cc3b5175436 Description: DIGITAL ISOLATORS
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: SPI
Operating Temperature: -40°C ~ 125°C
Data Rate: 40Mbps
Technology: Capacitive Coupling
Voltage - Isolation: 5700Vrms
Inputs - Side 1/Side 2: 3/1
Supplier Device Package: PG-DSO-16
Propagation Delay tpLH / tpHL (Max): 26ns, 26ns
Isolated Power: No
Channel Type: Bidirectional
Pulse Width Distortion (Max): 15ns
Number of Channels: 4
auf Bestellung 1500 Stücke:
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3+6 EUR
10+4.24 EUR
100+3.47 EUR
500+2.93 EUR
Mindestbestellmenge: 3
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4DIR1400HXUMA1 4DIR1400HXUMA1 Infineon Technologies Infineon-Datasheet_ISOFACE(TM)_4DIRx4xxH_family-DataSheet-v01_01-EN.pdf?fileId=8ac78c8c8929aa4d01899cc3b5175436 Description: DGTL ISOLTR 5.7KV 4CH SPI 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Type: SPI
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.7V ~ 6.5V
Data Rate: 40Mbps
Technology: Magnetic Coupling
Voltage - Isolation: 5700Vrms
Inputs - Side 1/Side 2: 3/1
Supplier Device Package: PG-DSO-16-46
Rise / Fall Time (Typ): 4ns, 4ns (Max)
Common Mode Transient Immunity (Min): 100kV/µs
Propagation Delay tpLH / tpHL (Max): 26ns, 26ns
Isolated Power: No
Channel Type: Bidirectional
Pulse Width Distortion (Max): 3ns
Number of Channels: 4
Produkt ist nicht verfügbar
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4DIR1400HXUMA1 4DIR1400HXUMA1 Infineon Technologies Infineon-Datasheet_ISOFACE(TM)_4DIRx4xxH_family-DataSheet-v01_01-EN.pdf?fileId=8ac78c8c8929aa4d01899cc3b5175436 Description: DGTL ISOLTR 5.7KV 4CH SPI 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Type: SPI
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.7V ~ 6.5V
Data Rate: 40Mbps
Technology: Magnetic Coupling
Voltage - Isolation: 5700Vrms
Inputs - Side 1/Side 2: 3/1
Supplier Device Package: PG-DSO-16-46
Rise / Fall Time (Typ): 4ns, 4ns (Max)
Common Mode Transient Immunity (Min): 100kV/µs
Propagation Delay tpLH / tpHL (Max): 26ns, 26ns
Isolated Power: No
Channel Type: Bidirectional
Pulse Width Distortion (Max): 3ns
Number of Channels: 4
auf Bestellung 1399 Stücke:
Lieferzeit 10-14 Tag (e)
5+4.1 EUR
10+2.96 EUR
100+2.28 EUR
500+1.98 EUR
Mindestbestellmenge: 5
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KITXMC47RELAXV1TOBO1 KITXMC47RELAXV1TOBO1 Infineon Technologies Infineon-Board_User_Manual_XMC4700_XMC4800_Relax_Kit_Series-UserManual-v01_04-EN.pdf?fileId=5546d46250cc1fdf01513f8e052d07fc Description: RELAX KIT XMC4700 EVAL BRD
Packaging: Bulk
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s)
Core Processor: ARM® Cortex®-M4
Utilized IC / Part: XMC4700
Platform: Relax Kit
auf Bestellung 52 Stücke:
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1+60.61 EUR
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ISK024NE2LM5AUSA1 ISK024NE2LM5AUSA1 Infineon Technologies Infineon-ISK024NE2LM5-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c7ddc01d7017e4377702619e0 Description: TRENCH <= 40V
Packaging: Cut Tape (CT)
Package / Case: 6-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 103A (Tc)
Power Dissipation (Max): 2.1W (Ta), 39W (Tc)
Supplier Device Package: PG-VSON-6-1
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Drain to Source Voltage (Vdss): 40 V
auf Bestellung 2760 Stücke:
Lieferzeit 10-14 Tag (e)
11+1.72 EUR
16+1.16 EUR
100+0.8 EUR
500+0.64 EUR
1000+0.59 EUR
Mindestbestellmenge: 11
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ISK057N04LM6ATLA1 ISK057N04LM6ATLA1 Infineon Technologies Infineon-ISK057N04LM6-DataSheet-v02_02-EN.pdf?fileId=8ac78c8c8779172a0187e60fd63111b2 Description: MOSFET N-CH 40V 64A 6VSON
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerVDFN
Mounting Type: Surface Mount
Number of Outputs: 1
Switch Type: USB Switch
Operating Temperature: -55°C ~ 155°C (TJ)
Rds On (Typ): 5.9mOhm (Max)
Input Type: Non-Inverting
Voltage - Load: 40V
Voltage - Supply (Vcc/Vdd): Not Required
Ratio - Input:Output: 1:1
Supplier Device Package: PG-VSON-6-1
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Rds On (Max) @ Id, Vgs: 5.75mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 39.1W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 20 V
Produkt ist nicht verfügbar
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ISK057N04LM6ATLA1 ISK057N04LM6ATLA1 Infineon Technologies Infineon-ISK057N04LM6-DataSheet-v02_02-EN.pdf?fileId=8ac78c8c8779172a0187e60fd63111b2 Description: MOSFET N-CH 40V 64A 6VSON
Packaging: Cut Tape (CT)
Package / Case: 6-PowerVDFN
Mounting Type: Surface Mount
Number of Outputs: 1
Switch Type: USB Switch
Operating Temperature: -55°C ~ 155°C (TJ)
Rds On (Typ): 5.9mOhm (Max)
Input Type: Non-Inverting
Voltage - Load: 40V
Voltage - Supply (Vcc/Vdd): Not Required
Ratio - Input:Output: 1:1
Supplier Device Package: PG-VSON-6-1
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Rds On (Max) @ Id, Vgs: 5.75mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 39.1W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 20 V
Produkt ist nicht verfügbar
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ISK036N03LM5AUSA1 ISK036N03LM5AUSA1 Infineon Technologies Infineon-ISK036N03LM5-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c7ddc01d7017e438096b819e3 Description: TRENCH <= 40V
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16.5A (Ta), 81A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 39W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-VSON-6-1
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 21.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 15 V
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ISK036N03LM5AUSA1 ISK036N03LM5AUSA1 Infineon Technologies Infineon-ISK036N03LM5-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c7ddc01d7017e438096b819e3 Description: TRENCH <= 40V
Packaging: Cut Tape (CT)
Package / Case: 6-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16.5A (Ta), 81A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 39W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-VSON-6-1
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 21.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 15 V
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8+2.2 EUR
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100+0.92 EUR
500+0.72 EUR
1000+0.66 EUR
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EVALBDPSDRIVERTOBO1 EVALBDPSDRIVERTOBO1 Infineon Technologies Infineon-Bidirectional_protection_switch_evaluation_kit_EVAL_BDPS_DD_TOLL_G_EVAL_BDAPS_DRIVER-UserManual-v01_00-EN.pdf?fileId=8ac78c8c821f38900182395772123baf Description: EVAL BOARD FOR 2EDF7175F
Packaging: Bulk
Function: MOSFET
Type: Power Management
Utilized IC / Part: 2EDF7175F
Supplied Contents: Board(s)
Primary Attributes: 36V ~ 75V Operating Voltage
Embedded: Yes, MCU
Contents: Board(s)
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CY7C1018DV33-10VXIT CY7C1018DV33-10VXIT Infineon Technologies download Description: IC SRAM 1MBIT PARALLEL 32SOJ
Packaging: Tape & Reel (TR)
Package / Case: 32-BSOJ (0.300", 7.62mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-SOJ
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
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CY7C1018DV33-10VXIT CY7C1018DV33-10VXIT Infineon Technologies download Description: IC SRAM 1MBIT PARALLEL 32SOJ
Packaging: Cut Tape (CT)
Package / Case: 32-BSOJ (0.300", 7.62mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-SOJ
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
auf Bestellung 1023 Stücke:
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IDH05G120C5XKSA1 IDH05G120C5XKSA1 Infineon Technologies Infineon-IDH05G120C5-DS-v02_00-EN.pdf?fileId=5546d4624fb7fef2014ffffaf7604e24 Description: DIODE SIL CARB 1200V 5A PGTO2201
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 301pF @ 1V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: PG-TO220-2-1
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 5 A
Current - Reverse Leakage @ Vr: 33 µA @ 1200 V
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TT285N16KOFHPSA2 TT285N16KOFHPSA2 Infineon Technologies Infineon-TT285N16KOF-DS-v03_04-EN.pdf?fileId=db3a304412b407950112b42f7b4d4bc5 Description: SCR MODULE 1.6KV 520A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 130°C
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 200 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 12500A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 285 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (RMS)) (Max): 520 A
Voltage - Off State: 1.6 kV
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TT280N18SOFHPSA1 TT280N18SOFHPSA1 Infineon Technologies Infineon-TT280N18SOF-DS-v03_01-EN.pdf?fileId=5546d4625cc9456a015d06e50ebf7edb Description: SCR MODULE 1800V 520A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 130°C
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 150 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 9000A @ 50Hz
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 280 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (RMS)) (Max): 520 A
Voltage - Off State: 1.8 kV
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CG8425AA Infineon Technologies Description: ASYNC
Packaging: Tray
Produkt ist nicht verfügbar
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CG7781AA Infineon Technologies Description: ASYNC
Packaging: Tray
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CY8C4124PVA-442Z CY8C4124PVA-442Z Infineon Technologies Infineon-Automotive_PSoC_4_PSoC_4100_Family_Programmable_System-on-Chip_(PSoC_)-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed973a95b0d&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integrati Description: IC MCU 32BIT 16KB FLASH 28SSOP
Packaging: Tube
Package / Case: 28-SSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 8x12b SAR; D/A 2xIDAC
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 28-SSOP
Number of I/O: 24
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
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CY8C4124PVA-442ZT CY8C4124PVA-442ZT Infineon Technologies Infineon-Automotive_PSoC_4_PSoC_4100_Family_Programmable_System-on-Chip_(PSoC_)-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed973a95b0d&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integrati Description: IC MCU 32BIT 16KB FLASH 28SSOP
Packaging: Tape & Reel (TR)
Package / Case: 28-SSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 8x12b SAR; D/A 2xIDAC
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I²C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 28-SSOP
Number of I/O: 24
DigiKey Programmable: Not Verified
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CY8C4124LQS-S433 CY8C4124LQS-S433 Infineon Technologies Description: PSOC4 - GENERAL
Packaging: Tray
Package / Case: 40-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10/12x12b SAR; D/A 2x7b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 40-QFN (6x6)
Number of I/O: 34
Grade: Automotive
Qualification: AEC-Q100
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CY8C4124LQS-S433T CY8C4124LQS-S433T Infineon Technologies Description: PSOC4 - GENERAL
Packaging: Tape & Reel (TR)
Package / Case: 40-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b, 12x12b SAR; D/A 2x7b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 40-QFN (6x6)
Number of I/O: 34
Grade: Automotive
Qualification: AEC-Q100
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7GA6Y0205 Infineon Technologies Description: INFINEON
Packaging: Bulk
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792826-00 Infineon Technologies Description: INFINEON
Packaging: Bulk
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CG8202AA Infineon Technologies Description: IC
Packaging: Bulk
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CG8874AM Infineon Technologies Description: IC
Packaging: Bulk
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ESD157B1W01005E6327XTSA1 ESD157B1W01005E6327XTSA1 Infineon Technologies Infineon-ESD157-B1-W01005-DataSheet-v01_02-EN.pdf?fileId=8ac78c8c85ecb3470185eea133f700a3 Description: TVS DIODE 3.3VWM 3.6V SGWLL22
Packaging: Tape & Reel (TR)
Package / Case: 01005 (0402 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TA)
Applications: HDMI, USB
Capacitance @ Frequency: 0.17pF @ 10GHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: SG-WLL-2-2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.9V
Voltage - Clamping (Max) @ Ipp: 3.6V (Typ)
Power - Peak Pulse: 7.2W
Power Line Protection: No
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ESD157B1W01005E6327XTSA1 ESD157B1W01005E6327XTSA1 Infineon Technologies Infineon-ESD157-B1-W01005-DataSheet-v01_02-EN.pdf?fileId=8ac78c8c85ecb3470185eea133f700a3 Description: TVS DIODE 3.3VWM 3.6V SGWLL22
Packaging: Cut Tape (CT)
Package / Case: 01005 (0402 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TA)
Applications: HDMI, USB
Capacitance @ Frequency: 0.17pF @ 10GHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: SG-WLL-2-2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.9V
Voltage - Clamping (Max) @ Ipp: 3.6V (Typ)
Power - Peak Pulse: 7.2W
Power Line Protection: No
auf Bestellung 12888 Stücke:
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77+0.23 EUR
127+0.14 EUR
205+0.086 EUR
500+0.062 EUR
1000+0.055 EUR
2000+0.048 EUR
5000+0.041 EUR
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ESD156B1W0201E6327XTSA1 ESD156B1W0201E6327XTSA1 Infineon Technologies Infineon-ESD156-B1-W0201-DataSheet-v01_02-EN.pdf?fileId=8ac78c8c85ecb3470185eea129d200a0 Description: TVS DIODE 3.6VWM 3.5V SGWLL23
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TA)
Applications: HDMI, USB
Capacitance @ Frequency: 0.19pF @ 10GHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.6V (Max)
Supplier Device Package: SG-WLL-2-3
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.9V
Voltage - Clamping (Max) @ Ipp: 3.5V (Typ)
Power - Peak Pulse: 7W
Power Line Protection: No
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ESD156B1W0201E6327XTSA1 ESD156B1W0201E6327XTSA1 Infineon Technologies Infineon-ESD156-B1-W0201-DataSheet-v01_02-EN.pdf?fileId=8ac78c8c85ecb3470185eea129d200a0 Description: TVS DIODE 3.6VWM 3.5V SGWLL23
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TA)
Applications: HDMI, USB
Capacitance @ Frequency: 0.19pF @ 10GHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.6V (Max)
Supplier Device Package: SG-WLL-2-3
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.9V
Voltage - Clamping (Max) @ Ipp: 3.5V (Typ)
Power - Peak Pulse: 7W
Power Line Protection: No
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114+0.15 EUR
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500+0.07 EUR
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ESD151B1W0201E6327XTSA1 ESD151B1W0201E6327XTSA1 Infineon Technologies Infineon-ESD151-B1-W0201-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8b6555fe018c0fddfad27743 Description: TVS DIODE 3.3VWM 3.5V SGWLL23
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TA)
Applications: HDMI, USB
Capacitance @ Frequency: 0.08pF @ 10GHz
Current - Peak Pulse (10/1000µs): 1A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: SG-WLL-2-3
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.9V
Voltage - Clamping (Max) @ Ipp: 3.5V (Typ)
Power - Peak Pulse: 3.5W
Power Line Protection: No
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15000+0.045 EUR
Mindestbestellmenge: 15000
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ESD151B1W0201E6327XTSA1 ESD151B1W0201E6327XTSA1 Infineon Technologies Infineon-ESD151-B1-W0201-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8b6555fe018c0fddfad27743 Description: TVS DIODE 3.3VWM 3.5V SGWLL23
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TA)
Applications: HDMI, USB
Capacitance @ Frequency: 0.08pF @ 10GHz
Current - Peak Pulse (10/1000µs): 1A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: SG-WLL-2-3
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.9V
Voltage - Clamping (Max) @ Ipp: 3.5V (Typ)
Power - Peak Pulse: 3.5W
Power Line Protection: No
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103+0.17 EUR
176+0.1 EUR
500+0.076 EUR
1000+0.059 EUR
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5000+0.054 EUR
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ESD155B2W0201E6327XTSA1 ESD155B2W0201E6327XTSA1 Infineon Technologies Infineon-ESD155-B2-W0201-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c85ecb3470185eea11ea9009d Description: TVS DIODE 3.3VWM 3.5V SGWLL31
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TA)
Applications: HDMI, USB
Capacitance @ Frequency: 0.18pF @ 10GHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: SG-WLL-3-1
Bidirectional Channels: 2
Voltage - Breakdown (Min): 5.9V
Voltage - Clamping (Max) @ Ipp: 3.5V (Typ)
Power - Peak Pulse: 7W
Power Line Protection: No
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ESD155B2W0201E6327XTSA1 ESD155B2W0201E6327XTSA1 Infineon Technologies Infineon-ESD155-B2-W0201-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c85ecb3470185eea11ea9009d Description: TVS DIODE 3.3VWM 3.5V SGWLL31
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TA)
Applications: HDMI, USB
Capacitance @ Frequency: 0.18pF @ 10GHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: SG-WLL-3-1
Bidirectional Channels: 2
Voltage - Breakdown (Min): 5.9V
Voltage - Clamping (Max) @ Ipp: 3.5V (Typ)
Power - Peak Pulse: 7W
Power Line Protection: No
auf Bestellung 13850 Stücke:
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53+0.33 EUR
85+0.21 EUR
138+0.13 EUR
500+0.094 EUR
1000+0.082 EUR
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5000+0.063 EUR
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CY7C1020D-10ZSXI CY7C1020D-10ZSXI Infineon Technologies download Description: IC SRAM 512KBIT PAR 44TSOP II
Packaging: Tray
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 512Kbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 32K x 16
DigiKey Programmable: Not Verified
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10+9.08 EUR
25+8.91 EUR
40+8.84 EUR
135+7.94 EUR
270+7.91 EUR
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AUIRLS3034-7TRL AUIRLS3034-7TRL Infineon Technologies auirls3034-7p.pdf?fileId=5546d462533600a4015355bec2b41586 Description: MOSFET N-CH 40V 240A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 200A, 10V
Power Dissipation (Max): 380W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: D2PAK (7-Lead)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 10990 pF @ 40 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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IPZA65R018CFD7XKSA1 IPZA65R018CFD7XKSA1 Infineon Technologies Infineon-IPZA65R018CFD7-DataSheet-v02_00-EN.pdf?fileId=5546d4627572d8fd01758f0d89607bbf Description: HIGH POWER_NEW
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 106A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 58.2A, 10V
Power Dissipation (Max): 446W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 2.91mA
Supplier Device Package: PG-TO247-4-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 234 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11660 pF @ 400 V
Produkt ist nicht verfügbar
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IPDQ65R017CFD7AXTMA1 IPDQ65R017CFD7AXTMA1 Infineon Technologies Infineon-IPDQ65R017CFD7A-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c869190210186cb76d75333a8 Description: AUTOMOTIVE_COOLMOS
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 136A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 61.6A, 10V
Power Dissipation (Max): 694W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 3.08mA
Supplier Device Package: PG-HDSOP-22-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 236 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12338 pF @ 400 V
Qualification: AEC-Q101
auf Bestellung 501 Stücke:
Lieferzeit 10-14 Tag (e)
1+25.31 EUR
10+20.07 EUR
25+18.76 EUR
100+17.33 EUR
250+16.64 EUR
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IPDQ65R029CFD7AXTMA1 IPDQ65R029CFD7AXTMA1 Infineon Technologies Infineon-IPDQ65R029CFD7A-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c869190210186cb76e6ef33ab Description: AUTOMOTIVE_COOLMOS
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 35.8A, 10V
Power Dissipation (Max): 463W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.79mA
Supplier Device Package: PG-HDSOP-22-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 139 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7149 pF @ 400 V
Qualification: AEC-Q101
auf Bestellung 750 Stücke:
Lieferzeit 10-14 Tag (e)
750+11.79 EUR
Mindestbestellmenge: 750
Im Einkaufswagen  Stück im Wert von  UAH
IPDQ65R029CFD7AXTMA1 IPDQ65R029CFD7AXTMA1 Infineon Technologies Infineon-IPDQ65R029CFD7A-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c869190210186cb76e6ef33ab Description: AUTOMOTIVE_COOLMOS
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 35.8A, 10V
Power Dissipation (Max): 463W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.79mA
Supplier Device Package: PG-HDSOP-22-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 139 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7149 pF @ 400 V
Qualification: AEC-Q101
auf Bestellung 750 Stücke:
Lieferzeit 10-14 Tag (e)
1+19.13 EUR
10+15 EUR
25+13.96 EUR
100+12.82 EUR
250+12.28 EUR
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IQE004NE1LM7CGATMA1 IQE004NE1LM7CGATMA1 Infineon Technologies Infineon-IQE004NE1LM7CG-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8ada5435018ae4c205bf478b Description: TRENCH <= 40V
Packaging: Tape & Reel (TR)
Package / Case: 9-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Ta), 379A (Tc)
Rds On (Max) @ Id, Vgs: 0.45mOhm @ 30A, 7V
Power Dissipation (Max): 2.1W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2V @ 432µA
Supplier Device Package: PG-TTFN-9-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V
Vgs (Max): ±7V
Drain to Source Voltage (Vdss): 15 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 7 V
Input Capacitance (Ciss) (Max) @ Vds: 6240 pF @ 7.5 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
5000+1.77 EUR
Mindestbestellmenge: 5000
Im Einkaufswagen  Stück im Wert von  UAH
IQE004NE1LM7CGATMA1 IQE004NE1LM7CGATMA1 Infineon Technologies Infineon-IQE004NE1LM7CG-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8ada5435018ae4c205bf478b Description: TRENCH <= 40V
Packaging: Cut Tape (CT)
Package / Case: 9-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Ta), 379A (Tc)
Rds On (Max) @ Id, Vgs: 0.45mOhm @ 30A, 7V
Power Dissipation (Max): 2.1W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2V @ 432µA
Supplier Device Package: PG-TTFN-9-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V
Vgs (Max): ±7V
Drain to Source Voltage (Vdss): 15 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 7 V
Input Capacitance (Ciss) (Max) @ Vds: 6240 pF @ 7.5 V
auf Bestellung 9980 Stücke:
Lieferzeit 10-14 Tag (e)
5+4.07 EUR
10+3.38 EUR
100+2.69 EUR
500+2.28 EUR
1000+1.93 EUR
2000+1.83 EUR
Mindestbestellmenge: 5
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IQE004NE1LM7ATMA1 Infineon Technologies Description: TRENCH <= 40V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Ta), 379A (Tc)
Rds On (Max) @ Id, Vgs: 0.45mOhm @ 30A, 7V
Power Dissipation (Max): 2.1W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2V @ 432µA
Supplier Device Package: PG-TSON-8-5
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V
Vgs (Max): ±7V
Drain to Source Voltage (Vdss): 15 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 7 V
Input Capacitance (Ciss) (Max) @ Vds: 6240 pF @ 7.5 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
5000+1.81 EUR
Mindestbestellmenge: 5000
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IQE004NE1LM7ATMA1 Infineon Technologies Description: TRENCH <= 40V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Ta), 379A (Tc)
Rds On (Max) @ Id, Vgs: 0.45mOhm @ 30A, 7V
Power Dissipation (Max): 2.1W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2V @ 432µA
Supplier Device Package: PG-TSON-8-5
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V
Vgs (Max): ±7V
Drain to Source Voltage (Vdss): 15 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 7 V
Input Capacitance (Ciss) (Max) @ Vds: 6240 pF @ 7.5 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
5+4.17 EUR
10+3.47 EUR
100+2.76 EUR
500+2.33 EUR
1000+1.98 EUR
2000+1.88 EUR
Mindestbestellmenge: 5
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IQE004NE1LM7CGSCATMA1 IQE004NE1LM7CGSCATMA1 Infineon Technologies Infineon-IQE004NE1LM7CGSC-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8ada5435018ae4c1f8664788 Description: TRENCH <= 40V
Packaging: Tape & Reel (TR)
Package / Case: 9-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Ta), 379A (Tc)
Rds On (Max) @ Id, Vgs: 0.45mOhm @ 30A, 7V
Power Dissipation (Max): 2.1W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2V @ 432µA
Supplier Device Package: PG-WHTFN-9
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V
Vgs (Max): ±7V
Drain to Source Voltage (Vdss): 15 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 7 V
Input Capacitance (Ciss) (Max) @ Vds: 6240 pF @ 7.5 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IQE004NE1LM7CGSCATMA1 IQE004NE1LM7CGSCATMA1 Infineon Technologies Infineon-IQE004NE1LM7CGSC-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8ada5435018ae4c1f8664788 Description: TRENCH <= 40V
Packaging: Cut Tape (CT)
Package / Case: 9-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Ta), 379A (Tc)
Rds On (Max) @ Id, Vgs: 0.45mOhm @ 30A, 7V
Power Dissipation (Max): 2.1W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2V @ 432µA
Supplier Device Package: PG-WHTFN-9
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V
Vgs (Max): ±7V
Drain to Source Voltage (Vdss): 15 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 7 V
Input Capacitance (Ciss) (Max) @ Vds: 6240 pF @ 7.5 V
auf Bestellung 7847 Stücke:
Lieferzeit 10-14 Tag (e)
5+3.78 EUR
10+2.7 EUR
100+1.96 EUR
500+1.68 EUR
Mindestbestellmenge: 5
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IRS2183PBF irs2183.pdf?fileId=5546d462533600a401535676d20c27d8
IRS2183PBF
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8DIP
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting, Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 40ns, 20ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 1.9A, 2.3A
DigiKey Programmable: Not Verified
auf Bestellung 15745 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
102+4.77 EUR
Mindestbestellmenge: 102
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IRS2183PBF irs2183.pdf?fileId=5546d462533600a401535676d20c27d8
IRS2183PBF
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting, Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 40ns, 20ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 1.9A, 2.3A
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IRS21834PBF irs2183.pdf?fileId=5546d462533600a401535676d20c27d8
IRS21834PBF
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 14DIP
Packaging: Bulk
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting, Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 14-DIP
Rise / Fall Time (Typ): 40ns, 20ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 1.9A, 2.3A
DigiKey Programmable: Not Verified
auf Bestellung 7306 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
88+5.55 EUR
Mindestbestellmenge: 88
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IRS21834PBF irs2183.pdf?fileId=5546d462533600a401535676d20c27d8
IRS21834PBF
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 14DIP
Packaging: Tube
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting, Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 14-DIP
Rise / Fall Time (Typ): 40ns, 20ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 1.9A, 2.3A
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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NAC1081XTMA1 Infineon-Infineon-NAC1080_NAC1081_DS_v01_03-EN-DataSheet-v01_03-EN.pdf?fileId=8ac78c8c7d718a49017db42a43930b11
NAC1081XTMA1
Hersteller: Infineon Technologies
Description: CONTACTLESS POWER&SENSOR
Packaging: Cut Tape (CT)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 13.56MHz
Interface: SPI, UART
Type: RFID Reader/Transponder
Operating Temperature: -25°C ~ 85°C (TA)
Voltage - Supply: 2.8V ~ 3.3V
Standards: ISO 14443, NFC
Supplier Device Package: PG-VQFN-32-20
auf Bestellung 4962 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.77 EUR
10+4.35 EUR
25+3.99 EUR
100+3.6 EUR
250+3.41 EUR
500+3.3 EUR
1000+3.2 EUR
2500+3.11 EUR
Mindestbestellmenge: 4
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BGT24AT2E6433XUMA1 Infineon-BGT24AT2-DS-v03_02-EN.pdf?fileId=5546d46259d9a4bf015a1339f38e0db3
BGT24AT2E6433XUMA1
Hersteller: Infineon Technologies
Description: IC RF TXRX 32VQFN
Packaging: Tape & Reel (TR)
Package / Case: 32-PowerVFQFN
Mounting Type: Surface Mount
Frequency: 24GHz
Type: TxRx Only
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 3.3V
Power - Output: 10dBm
Supplier Device Package: PG-VQFN-32-9
Serial Interfaces: SPI
Grade: Automotive
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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KITXMC13BOOT001TOBO1 Board_Users_Manual_XMC1300_CPU_Card_R2.pdf?folderId=db3a304334fac4c601350a01037e11d2&fileId=db3a30433da5396c013da5d1ef0500b8&ack=t
KITXMC13BOOT001TOBO1
Hersteller: Infineon Technologies
Description: BOOT KIT XMC1300 EVAL BRD
Packaging: Box
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s)
Core Processor: ARM® Cortex®-M0
Utilized IC / Part: XMC1300
Platform: Boot Kit
auf Bestellung 153 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+57.13 EUR
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CY62167GN18-55BVXI Infineon-CY62167GN18-55BVXIT-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee23ce068b1&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY62167GN18-55BVXI
Hersteller: Infineon Technologies
Description: IC SRAM 16MBIT PARALLEL 48VFBGA
Packaging: Tray
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 2.2V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-VFBGA (6x8)
Write Cycle Time - Word, Page: 55ns
Memory Interface: Parallel
Access Time: 55 ns
Memory Organization: 2M x 8, 1M x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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4DIR2401HXUMA1 Infineon-Datasheet_ISOFACE(TM)_4DIRx4xxH_family-DataSheet-v01_01-EN.pdf?fileId=8ac78c8c8929aa4d01899cc3b5175436
4DIR2401HXUMA1
Hersteller: Infineon Technologies
Description: DGTL ISOLTR 5.7KV 4CH SPI 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Type: SPI
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.7V ~ 6.5V
Data Rate: 40Mbps
Technology: Magnetic Coupling
Voltage - Isolation: 5700Vrms
Inputs - Side 1/Side 2: 2/2
Supplier Device Package: PG-DSO-16-46
Rise / Fall Time (Typ): 4ns, 4ns (Max)
Common Mode Transient Immunity (Min): 100kV/µs
Propagation Delay tpLH / tpHL (Max): 26ns, 26ns
Isolated Power: No
Channel Type: Bidirectional
Pulse Width Distortion (Max): 3ns
Number of Channels: 4
Produkt ist nicht verfügbar
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4DIR2401HXUMA1 Infineon-Datasheet_ISOFACE(TM)_4DIRx4xxH_family-DataSheet-v01_01-EN.pdf?fileId=8ac78c8c8929aa4d01899cc3b5175436
4DIR2401HXUMA1
Hersteller: Infineon Technologies
Description: DGTL ISOLTR 5.7KV 4CH SPI 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Type: SPI
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.7V ~ 6.5V
Data Rate: 40Mbps
Technology: Magnetic Coupling
Voltage - Isolation: 5700Vrms
Inputs - Side 1/Side 2: 2/2
Supplier Device Package: PG-DSO-16-46
Rise / Fall Time (Typ): 4ns, 4ns (Max)
Common Mode Transient Immunity (Min): 100kV/µs
Propagation Delay tpLH / tpHL (Max): 26ns, 26ns
Isolated Power: No
Channel Type: Bidirectional
Pulse Width Distortion (Max): 3ns
Number of Channels: 4
auf Bestellung 1485 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.64 EUR
10+2.62 EUR
100+2.02 EUR
500+1.75 EUR
Mindestbestellmenge: 5
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4DIR1420HXUMA1 Infineon-Datasheet_ISOFACE(TM)_4DIRx4xxH_family-DataSheet-v01_01-EN.pdf?fileId=8ac78c8c8929aa4d01899cc3b5175436
Hersteller: Infineon Technologies
Description: DIGITAL ISOLATORS
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: SPI
Operating Temperature: -40°C ~ 125°C
Data Rate: 40Mbps
Technology: Capacitive Coupling
Voltage - Isolation: 5700Vrms
Inputs - Side 1/Side 2: 3/1
Supplier Device Package: PG-DSO-16
Propagation Delay tpLH / tpHL (Max): 26ns, 26ns
Isolated Power: No
Channel Type: Bidirectional
Pulse Width Distortion (Max): 15ns
Number of Channels: 4
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1500+2.79 EUR
Mindestbestellmenge: 1500
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4DIR1420HXUMA1 Infineon-Datasheet_ISOFACE(TM)_4DIRx4xxH_family-DataSheet-v01_01-EN.pdf?fileId=8ac78c8c8929aa4d01899cc3b5175436
Hersteller: Infineon Technologies
Description: DIGITAL ISOLATORS
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: SPI
Operating Temperature: -40°C ~ 125°C
Data Rate: 40Mbps
Technology: Capacitive Coupling
Voltage - Isolation: 5700Vrms
Inputs - Side 1/Side 2: 3/1
Supplier Device Package: PG-DSO-16
Propagation Delay tpLH / tpHL (Max): 26ns, 26ns
Isolated Power: No
Channel Type: Bidirectional
Pulse Width Distortion (Max): 15ns
Number of Channels: 4
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.23 EUR
10+4.4 EUR
100+3.6 EUR
500+3.04 EUR
Mindestbestellmenge: 3
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4DIR2400HXUMA1 Infineon-Datasheet_ISOFACE(TM)_4DIRx4xxH_family-DataSheet-v01_01-EN.pdf?fileId=8ac78c8c8929aa4d01899cc3b5175436
4DIR2400HXUMA1
Hersteller: Infineon Technologies
Description: DGTL ISOLTR 5.7KV 4CH SPI 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Type: SPI
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.7V ~ 6.5V
Data Rate: 40Mbps
Technology: Magnetic Coupling
Voltage - Isolation: 5700Vrms
Inputs - Side 1/Side 2: 2/2
Supplier Device Package: PG-DSO-16-46
Rise / Fall Time (Typ): 4ns, 4ns (Max)
Common Mode Transient Immunity (Min): 100kV/µs
Propagation Delay tpLH / tpHL (Max): 26ns, 26ns
Isolated Power: No
Channel Type: Bidirectional
Pulse Width Distortion (Max): 3ns
Number of Channels: 4
Produkt ist nicht verfügbar
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4DIR2400HXUMA1 Infineon-Datasheet_ISOFACE(TM)_4DIRx4xxH_family-DataSheet-v01_01-EN.pdf?fileId=8ac78c8c8929aa4d01899cc3b5175436
4DIR2400HXUMA1
Hersteller: Infineon Technologies
Description: DGTL ISOLTR 5.7KV 4CH SPI 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Type: SPI
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.7V ~ 6.5V
Data Rate: 40Mbps
Technology: Magnetic Coupling
Voltage - Isolation: 5700Vrms
Inputs - Side 1/Side 2: 2/2
Supplier Device Package: PG-DSO-16-46
Rise / Fall Time (Typ): 4ns, 4ns (Max)
Common Mode Transient Immunity (Min): 100kV/µs
Propagation Delay tpLH / tpHL (Max): 26ns, 26ns
Isolated Power: No
Channel Type: Bidirectional
Pulse Width Distortion (Max): 3ns
Number of Channels: 4
auf Bestellung 1383 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.63 EUR
10+2.61 EUR
100+2.01 EUR
500+1.74 EUR
Mindestbestellmenge: 5
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4DIR1421HXUMA1 Infineon-Datasheet_ISOFACE(TM)_4DIRx4xxH_family-DataSheet-v01_01-EN.pdf?fileId=8ac78c8c8929aa4d01899cc3b5175436
Hersteller: Infineon Technologies
Description: DIGITAL ISOLATORS
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: SPI
Operating Temperature: -40°C ~ 125°C
Data Rate: 40Mbps
Technology: Capacitive Coupling
Voltage - Isolation: 5700Vrms
Inputs - Side 1/Side 2: 3/1
Supplier Device Package: PG-DSO-16
Propagation Delay tpLH / tpHL (Max): 26ns, 26ns
Isolated Power: No
Channel Type: Bidirectional
Pulse Width Distortion (Max): 15ns
Number of Channels: 4
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1500+2.68 EUR
Mindestbestellmenge: 1500
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4DIR1421HXUMA1 Infineon-Datasheet_ISOFACE(TM)_4DIRx4xxH_family-DataSheet-v01_01-EN.pdf?fileId=8ac78c8c8929aa4d01899cc3b5175436
Hersteller: Infineon Technologies
Description: DIGITAL ISOLATORS
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: SPI
Operating Temperature: -40°C ~ 125°C
Data Rate: 40Mbps
Technology: Capacitive Coupling
Voltage - Isolation: 5700Vrms
Inputs - Side 1/Side 2: 3/1
Supplier Device Package: PG-DSO-16
Propagation Delay tpLH / tpHL (Max): 26ns, 26ns
Isolated Power: No
Channel Type: Bidirectional
Pulse Width Distortion (Max): 15ns
Number of Channels: 4
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6 EUR
10+4.24 EUR
100+3.47 EUR
500+2.93 EUR
Mindestbestellmenge: 3
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4DIR1400HXUMA1 Infineon-Datasheet_ISOFACE(TM)_4DIRx4xxH_family-DataSheet-v01_01-EN.pdf?fileId=8ac78c8c8929aa4d01899cc3b5175436
4DIR1400HXUMA1
Hersteller: Infineon Technologies
Description: DGTL ISOLTR 5.7KV 4CH SPI 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Type: SPI
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.7V ~ 6.5V
Data Rate: 40Mbps
Technology: Magnetic Coupling
Voltage - Isolation: 5700Vrms
Inputs - Side 1/Side 2: 3/1
Supplier Device Package: PG-DSO-16-46
Rise / Fall Time (Typ): 4ns, 4ns (Max)
Common Mode Transient Immunity (Min): 100kV/µs
Propagation Delay tpLH / tpHL (Max): 26ns, 26ns
Isolated Power: No
Channel Type: Bidirectional
Pulse Width Distortion (Max): 3ns
Number of Channels: 4
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
4DIR1400HXUMA1 Infineon-Datasheet_ISOFACE(TM)_4DIRx4xxH_family-DataSheet-v01_01-EN.pdf?fileId=8ac78c8c8929aa4d01899cc3b5175436
4DIR1400HXUMA1
Hersteller: Infineon Technologies
Description: DGTL ISOLTR 5.7KV 4CH SPI 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Type: SPI
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.7V ~ 6.5V
Data Rate: 40Mbps
Technology: Magnetic Coupling
Voltage - Isolation: 5700Vrms
Inputs - Side 1/Side 2: 3/1
Supplier Device Package: PG-DSO-16-46
Rise / Fall Time (Typ): 4ns, 4ns (Max)
Common Mode Transient Immunity (Min): 100kV/µs
Propagation Delay tpLH / tpHL (Max): 26ns, 26ns
Isolated Power: No
Channel Type: Bidirectional
Pulse Width Distortion (Max): 3ns
Number of Channels: 4
auf Bestellung 1399 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+4.1 EUR
10+2.96 EUR
100+2.28 EUR
500+1.98 EUR
Mindestbestellmenge: 5
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KITXMC47RELAXV1TOBO1 Infineon-Board_User_Manual_XMC4700_XMC4800_Relax_Kit_Series-UserManual-v01_04-EN.pdf?fileId=5546d46250cc1fdf01513f8e052d07fc
KITXMC47RELAXV1TOBO1
Hersteller: Infineon Technologies
Description: RELAX KIT XMC4700 EVAL BRD
Packaging: Bulk
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s)
Core Processor: ARM® Cortex®-M4
Utilized IC / Part: XMC4700
Platform: Relax Kit
auf Bestellung 52 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+60.61 EUR
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ISK024NE2LM5AUSA1 Infineon-ISK024NE2LM5-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c7ddc01d7017e4377702619e0
ISK024NE2LM5AUSA1
Hersteller: Infineon Technologies
Description: TRENCH <= 40V
Packaging: Cut Tape (CT)
Package / Case: 6-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 103A (Tc)
Power Dissipation (Max): 2.1W (Ta), 39W (Tc)
Supplier Device Package: PG-VSON-6-1
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Drain to Source Voltage (Vdss): 40 V
auf Bestellung 2760 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
11+1.72 EUR
16+1.16 EUR
100+0.8 EUR
500+0.64 EUR
1000+0.59 EUR
Mindestbestellmenge: 11
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ISK057N04LM6ATLA1 Infineon-ISK057N04LM6-DataSheet-v02_02-EN.pdf?fileId=8ac78c8c8779172a0187e60fd63111b2
ISK057N04LM6ATLA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 64A 6VSON
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerVDFN
Mounting Type: Surface Mount
Number of Outputs: 1
Switch Type: USB Switch
Operating Temperature: -55°C ~ 155°C (TJ)
Rds On (Typ): 5.9mOhm (Max)
Input Type: Non-Inverting
Voltage - Load: 40V
Voltage - Supply (Vcc/Vdd): Not Required
Ratio - Input:Output: 1:1
Supplier Device Package: PG-VSON-6-1
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Rds On (Max) @ Id, Vgs: 5.75mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 39.1W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 20 V
Produkt ist nicht verfügbar
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ISK057N04LM6ATLA1 Infineon-ISK057N04LM6-DataSheet-v02_02-EN.pdf?fileId=8ac78c8c8779172a0187e60fd63111b2
ISK057N04LM6ATLA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 64A 6VSON
Packaging: Cut Tape (CT)
Package / Case: 6-PowerVDFN
Mounting Type: Surface Mount
Number of Outputs: 1
Switch Type: USB Switch
Operating Temperature: -55°C ~ 155°C (TJ)
Rds On (Typ): 5.9mOhm (Max)
Input Type: Non-Inverting
Voltage - Load: 40V
Voltage - Supply (Vcc/Vdd): Not Required
Ratio - Input:Output: 1:1
Supplier Device Package: PG-VSON-6-1
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Rds On (Max) @ Id, Vgs: 5.75mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 39.1W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 20 V
Produkt ist nicht verfügbar
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ISK036N03LM5AUSA1 Infineon-ISK036N03LM5-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c7ddc01d7017e438096b819e3
ISK036N03LM5AUSA1
Hersteller: Infineon Technologies
Description: TRENCH <= 40V
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16.5A (Ta), 81A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 39W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-VSON-6-1
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 21.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 15 V
Produkt ist nicht verfügbar
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ISK036N03LM5AUSA1 Infineon-ISK036N03LM5-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c7ddc01d7017e438096b819e3
ISK036N03LM5AUSA1
Hersteller: Infineon Technologies
Description: TRENCH <= 40V
Packaging: Cut Tape (CT)
Package / Case: 6-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16.5A (Ta), 81A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 39W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-VSON-6-1
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 21.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 15 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.2 EUR
13+1.39 EUR
100+0.92 EUR
500+0.72 EUR
1000+0.66 EUR
Mindestbestellmenge: 8
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EVALBDPSDRIVERTOBO1 Infineon-Bidirectional_protection_switch_evaluation_kit_EVAL_BDPS_DD_TOLL_G_EVAL_BDAPS_DRIVER-UserManual-v01_00-EN.pdf?fileId=8ac78c8c821f38900182395772123baf
EVALBDPSDRIVERTOBO1
Hersteller: Infineon Technologies
Description: EVAL BOARD FOR 2EDF7175F
Packaging: Bulk
Function: MOSFET
Type: Power Management
Utilized IC / Part: 2EDF7175F
Supplied Contents: Board(s)
Primary Attributes: 36V ~ 75V Operating Voltage
Embedded: Yes, MCU
Contents: Board(s)
Produkt ist nicht verfügbar
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CY7C1018DV33-10VXIT download
CY7C1018DV33-10VXIT
Hersteller: Infineon Technologies
Description: IC SRAM 1MBIT PARALLEL 32SOJ
Packaging: Tape & Reel (TR)
Package / Case: 32-BSOJ (0.300", 7.62mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-SOJ
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY7C1018DV33-10VXIT download
CY7C1018DV33-10VXIT
Hersteller: Infineon Technologies
Description: IC SRAM 1MBIT PARALLEL 32SOJ
Packaging: Cut Tape (CT)
Package / Case: 32-BSOJ (0.300", 7.62mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-SOJ
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
auf Bestellung 1023 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.26 EUR
10+4.72 EUR
25+4.65 EUR
50+4.63 EUR
100+4.14 EUR
250+4 EUR
500+3.99 EUR
Mindestbestellmenge: 4
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IDH05G120C5XKSA1 Infineon-IDH05G120C5-DS-v02_00-EN.pdf?fileId=5546d4624fb7fef2014ffffaf7604e24
IDH05G120C5XKSA1
Hersteller: Infineon Technologies
Description: DIODE SIL CARB 1200V 5A PGTO2201
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 301pF @ 1V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: PG-TO220-2-1
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 5 A
Current - Reverse Leakage @ Vr: 33 µA @ 1200 V
auf Bestellung 1083 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.12 EUR
50+3.12 EUR
100+2.83 EUR
500+2.28 EUR
1000+2.15 EUR
Mindestbestellmenge: 3
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TT285N16KOFHPSA2 Infineon-TT285N16KOF-DS-v03_04-EN.pdf?fileId=db3a304412b407950112b42f7b4d4bc5
TT285N16KOFHPSA2
Hersteller: Infineon Technologies
Description: SCR MODULE 1.6KV 520A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 130°C
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 200 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 12500A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 285 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (RMS)) (Max): 520 A
Voltage - Off State: 1.6 kV
auf Bestellung 9 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+279.8 EUR
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TT280N18SOFHPSA1 Infineon-TT280N18SOF-DS-v03_01-EN.pdf?fileId=5546d4625cc9456a015d06e50ebf7edb
TT280N18SOFHPSA1
Hersteller: Infineon Technologies
Description: SCR MODULE 1800V 520A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 130°C
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 150 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 9000A @ 50Hz
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 280 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (RMS)) (Max): 520 A
Voltage - Off State: 1.8 kV
Produkt ist nicht verfügbar
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CG8425AA
Hersteller: Infineon Technologies
Description: ASYNC
Packaging: Tray
Produkt ist nicht verfügbar
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CG7781AA
Hersteller: Infineon Technologies
Description: ASYNC
Packaging: Tray
Produkt ist nicht verfügbar
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CY8C4124PVA-442Z Infineon-Automotive_PSoC_4_PSoC_4100_Family_Programmable_System-on-Chip_(PSoC_)-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed973a95b0d&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integrati
CY8C4124PVA-442Z
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 16KB FLASH 28SSOP
Packaging: Tube
Package / Case: 28-SSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 8x12b SAR; D/A 2xIDAC
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 28-SSOP
Number of I/O: 24
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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CY8C4124PVA-442ZT Infineon-Automotive_PSoC_4_PSoC_4100_Family_Programmable_System-on-Chip_(PSoC_)-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed973a95b0d&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integrati
CY8C4124PVA-442ZT
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 16KB FLASH 28SSOP
Packaging: Tape & Reel (TR)
Package / Case: 28-SSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 8x12b SAR; D/A 2xIDAC
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I²C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 28-SSOP
Number of I/O: 24
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY8C4124LQS-S433
CY8C4124LQS-S433
Hersteller: Infineon Technologies
Description: PSOC4 - GENERAL
Packaging: Tray
Package / Case: 40-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10/12x12b SAR; D/A 2x7b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 40-QFN (6x6)
Number of I/O: 34
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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CY8C4124LQS-S433T
CY8C4124LQS-S433T
Hersteller: Infineon Technologies
Description: PSOC4 - GENERAL
Packaging: Tape & Reel (TR)
Package / Case: 40-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b, 12x12b SAR; D/A 2x7b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 40-QFN (6x6)
Number of I/O: 34
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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7GA6Y0205
Hersteller: Infineon Technologies
Description: INFINEON
Packaging: Bulk
Produkt ist nicht verfügbar
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792826-00
Hersteller: Infineon Technologies
Description: INFINEON
Packaging: Bulk
Produkt ist nicht verfügbar
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CG8202AA
Hersteller: Infineon Technologies
Description: IC
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CG8874AM
Hersteller: Infineon Technologies
Description: IC
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
ESD157B1W01005E6327XTSA1 Infineon-ESD157-B1-W01005-DataSheet-v01_02-EN.pdf?fileId=8ac78c8c85ecb3470185eea133f700a3
ESD157B1W01005E6327XTSA1
Hersteller: Infineon Technologies
Description: TVS DIODE 3.3VWM 3.6V SGWLL22
Packaging: Tape & Reel (TR)
Package / Case: 01005 (0402 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TA)
Applications: HDMI, USB
Capacitance @ Frequency: 0.17pF @ 10GHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: SG-WLL-2-2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.9V
Voltage - Clamping (Max) @ Ipp: 3.6V (Typ)
Power - Peak Pulse: 7.2W
Power Line Protection: No
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
ESD157B1W01005E6327XTSA1 Infineon-ESD157-B1-W01005-DataSheet-v01_02-EN.pdf?fileId=8ac78c8c85ecb3470185eea133f700a3
ESD157B1W01005E6327XTSA1
Hersteller: Infineon Technologies
Description: TVS DIODE 3.3VWM 3.6V SGWLL22
Packaging: Cut Tape (CT)
Package / Case: 01005 (0402 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TA)
Applications: HDMI, USB
Capacitance @ Frequency: 0.17pF @ 10GHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: SG-WLL-2-2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.9V
Voltage - Clamping (Max) @ Ipp: 3.6V (Typ)
Power - Peak Pulse: 7.2W
Power Line Protection: No
auf Bestellung 12888 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
77+0.23 EUR
127+0.14 EUR
205+0.086 EUR
500+0.062 EUR
1000+0.055 EUR
2000+0.048 EUR
5000+0.041 EUR
Mindestbestellmenge: 77
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ESD156B1W0201E6327XTSA1 Infineon-ESD156-B1-W0201-DataSheet-v01_02-EN.pdf?fileId=8ac78c8c85ecb3470185eea129d200a0
ESD156B1W0201E6327XTSA1
Hersteller: Infineon Technologies
Description: TVS DIODE 3.6VWM 3.5V SGWLL23
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TA)
Applications: HDMI, USB
Capacitance @ Frequency: 0.19pF @ 10GHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.6V (Max)
Supplier Device Package: SG-WLL-2-3
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.9V
Voltage - Clamping (Max) @ Ipp: 3.5V (Typ)
Power - Peak Pulse: 7W
Power Line Protection: No
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
ESD156B1W0201E6327XTSA1 Infineon-ESD156-B1-W0201-DataSheet-v01_02-EN.pdf?fileId=8ac78c8c85ecb3470185eea129d200a0
ESD156B1W0201E6327XTSA1
Hersteller: Infineon Technologies
Description: TVS DIODE 3.6VWM 3.5V SGWLL23
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TA)
Applications: HDMI, USB
Capacitance @ Frequency: 0.19pF @ 10GHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.6V (Max)
Supplier Device Package: SG-WLL-2-3
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.9V
Voltage - Clamping (Max) @ Ipp: 3.5V (Typ)
Power - Peak Pulse: 7W
Power Line Protection: No
auf Bestellung 2546 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
77+0.23 EUR
114+0.15 EUR
176+0.1 EUR
500+0.07 EUR
1000+0.05 EUR
2000+0.046 EUR
Mindestbestellmenge: 77
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ESD151B1W0201E6327XTSA1 Infineon-ESD151-B1-W0201-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8b6555fe018c0fddfad27743
ESD151B1W0201E6327XTSA1
Hersteller: Infineon Technologies
Description: TVS DIODE 3.3VWM 3.5V SGWLL23
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TA)
Applications: HDMI, USB
Capacitance @ Frequency: 0.08pF @ 10GHz
Current - Peak Pulse (10/1000µs): 1A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: SG-WLL-2-3
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.9V
Voltage - Clamping (Max) @ Ipp: 3.5V (Typ)
Power - Peak Pulse: 3.5W
Power Line Protection: No
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
15000+0.045 EUR
Mindestbestellmenge: 15000
Im Einkaufswagen  Stück im Wert von  UAH
ESD151B1W0201E6327XTSA1 Infineon-ESD151-B1-W0201-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8b6555fe018c0fddfad27743
ESD151B1W0201E6327XTSA1
Hersteller: Infineon Technologies
Description: TVS DIODE 3.3VWM 3.5V SGWLL23
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TA)
Applications: HDMI, USB
Capacitance @ Frequency: 0.08pF @ 10GHz
Current - Peak Pulse (10/1000µs): 1A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: SG-WLL-2-3
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.9V
Voltage - Clamping (Max) @ Ipp: 3.5V (Typ)
Power - Peak Pulse: 3.5W
Power Line Protection: No
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
67+0.26 EUR
103+0.17 EUR
176+0.1 EUR
500+0.076 EUR
1000+0.059 EUR
2000+0.056 EUR
5000+0.054 EUR
Mindestbestellmenge: 67
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ESD155B2W0201E6327XTSA1 Infineon-ESD155-B2-W0201-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c85ecb3470185eea11ea9009d
ESD155B2W0201E6327XTSA1
Hersteller: Infineon Technologies
Description: TVS DIODE 3.3VWM 3.5V SGWLL31
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TA)
Applications: HDMI, USB
Capacitance @ Frequency: 0.18pF @ 10GHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: SG-WLL-3-1
Bidirectional Channels: 2
Voltage - Breakdown (Min): 5.9V
Voltage - Clamping (Max) @ Ipp: 3.5V (Typ)
Power - Peak Pulse: 7W
Power Line Protection: No
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
ESD155B2W0201E6327XTSA1 Infineon-ESD155-B2-W0201-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c85ecb3470185eea11ea9009d
ESD155B2W0201E6327XTSA1
Hersteller: Infineon Technologies
Description: TVS DIODE 3.3VWM 3.5V SGWLL31
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TA)
Applications: HDMI, USB
Capacitance @ Frequency: 0.18pF @ 10GHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: SG-WLL-3-1
Bidirectional Channels: 2
Voltage - Breakdown (Min): 5.9V
Voltage - Clamping (Max) @ Ipp: 3.5V (Typ)
Power - Peak Pulse: 7W
Power Line Protection: No
auf Bestellung 13850 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
53+0.33 EUR
85+0.21 EUR
138+0.13 EUR
500+0.094 EUR
1000+0.082 EUR
2000+0.073 EUR
5000+0.063 EUR
Mindestbestellmenge: 53
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CY7C1020D-10ZSXI download
CY7C1020D-10ZSXI
Hersteller: Infineon Technologies
Description: IC SRAM 512KBIT PAR 44TSOP II
Packaging: Tray
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 512Kbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 32K x 16
DigiKey Programmable: Not Verified
auf Bestellung 515 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+9.94 EUR
10+9.08 EUR
25+8.91 EUR
40+8.84 EUR
135+7.94 EUR
270+7.91 EUR
Mindestbestellmenge: 2
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AUIRLS3034-7TRL auirls3034-7p.pdf?fileId=5546d462533600a4015355bec2b41586
AUIRLS3034-7TRL
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 240A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 200A, 10V
Power Dissipation (Max): 380W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: D2PAK (7-Lead)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 10990 pF @ 40 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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IPZA65R018CFD7XKSA1 Infineon-IPZA65R018CFD7-DataSheet-v02_00-EN.pdf?fileId=5546d4627572d8fd01758f0d89607bbf
IPZA65R018CFD7XKSA1
Hersteller: Infineon Technologies
Description: HIGH POWER_NEW
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 106A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 58.2A, 10V
Power Dissipation (Max): 446W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 2.91mA
Supplier Device Package: PG-TO247-4-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 234 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11660 pF @ 400 V
Produkt ist nicht verfügbar
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IPDQ65R017CFD7AXTMA1 Infineon-IPDQ65R017CFD7A-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c869190210186cb76d75333a8
IPDQ65R017CFD7AXTMA1
Hersteller: Infineon Technologies
Description: AUTOMOTIVE_COOLMOS
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 136A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 61.6A, 10V
Power Dissipation (Max): 694W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 3.08mA
Supplier Device Package: PG-HDSOP-22-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 236 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12338 pF @ 400 V
Qualification: AEC-Q101
auf Bestellung 501 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+25.31 EUR
10+20.07 EUR
25+18.76 EUR
100+17.33 EUR
250+16.64 EUR
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IPDQ65R029CFD7AXTMA1 Infineon-IPDQ65R029CFD7A-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c869190210186cb76e6ef33ab
IPDQ65R029CFD7AXTMA1
Hersteller: Infineon Technologies
Description: AUTOMOTIVE_COOLMOS
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 35.8A, 10V
Power Dissipation (Max): 463W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.79mA
Supplier Device Package: PG-HDSOP-22-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 139 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7149 pF @ 400 V
Qualification: AEC-Q101
auf Bestellung 750 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
750+11.79 EUR
Mindestbestellmenge: 750
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IPDQ65R029CFD7AXTMA1 Infineon-IPDQ65R029CFD7A-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c869190210186cb76e6ef33ab
IPDQ65R029CFD7AXTMA1
Hersteller: Infineon Technologies
Description: AUTOMOTIVE_COOLMOS
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 35.8A, 10V
Power Dissipation (Max): 463W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.79mA
Supplier Device Package: PG-HDSOP-22-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 139 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7149 pF @ 400 V
Qualification: AEC-Q101
auf Bestellung 750 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+19.13 EUR
10+15 EUR
25+13.96 EUR
100+12.82 EUR
250+12.28 EUR
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IQE004NE1LM7CGATMA1 Infineon-IQE004NE1LM7CG-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8ada5435018ae4c205bf478b
IQE004NE1LM7CGATMA1
Hersteller: Infineon Technologies
Description: TRENCH <= 40V
Packaging: Tape & Reel (TR)
Package / Case: 9-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Ta), 379A (Tc)
Rds On (Max) @ Id, Vgs: 0.45mOhm @ 30A, 7V
Power Dissipation (Max): 2.1W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2V @ 432µA
Supplier Device Package: PG-TTFN-9-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V
Vgs (Max): ±7V
Drain to Source Voltage (Vdss): 15 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 7 V
Input Capacitance (Ciss) (Max) @ Vds: 6240 pF @ 7.5 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+1.77 EUR
Mindestbestellmenge: 5000
Im Einkaufswagen  Stück im Wert von  UAH
IQE004NE1LM7CGATMA1 Infineon-IQE004NE1LM7CG-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8ada5435018ae4c205bf478b
IQE004NE1LM7CGATMA1
Hersteller: Infineon Technologies
Description: TRENCH <= 40V
Packaging: Cut Tape (CT)
Package / Case: 9-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Ta), 379A (Tc)
Rds On (Max) @ Id, Vgs: 0.45mOhm @ 30A, 7V
Power Dissipation (Max): 2.1W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2V @ 432µA
Supplier Device Package: PG-TTFN-9-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V
Vgs (Max): ±7V
Drain to Source Voltage (Vdss): 15 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 7 V
Input Capacitance (Ciss) (Max) @ Vds: 6240 pF @ 7.5 V
auf Bestellung 9980 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+4.07 EUR
10+3.38 EUR
100+2.69 EUR
500+2.28 EUR
1000+1.93 EUR
2000+1.83 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
IQE004NE1LM7ATMA1
Hersteller: Infineon Technologies
Description: TRENCH <= 40V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Ta), 379A (Tc)
Rds On (Max) @ Id, Vgs: 0.45mOhm @ 30A, 7V
Power Dissipation (Max): 2.1W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2V @ 432µA
Supplier Device Package: PG-TSON-8-5
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V
Vgs (Max): ±7V
Drain to Source Voltage (Vdss): 15 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 7 V
Input Capacitance (Ciss) (Max) @ Vds: 6240 pF @ 7.5 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+1.81 EUR
Mindestbestellmenge: 5000
Im Einkaufswagen  Stück im Wert von  UAH
IQE004NE1LM7ATMA1
Hersteller: Infineon Technologies
Description: TRENCH <= 40V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Ta), 379A (Tc)
Rds On (Max) @ Id, Vgs: 0.45mOhm @ 30A, 7V
Power Dissipation (Max): 2.1W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2V @ 432µA
Supplier Device Package: PG-TSON-8-5
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V
Vgs (Max): ±7V
Drain to Source Voltage (Vdss): 15 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 7 V
Input Capacitance (Ciss) (Max) @ Vds: 6240 pF @ 7.5 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+4.17 EUR
10+3.47 EUR
100+2.76 EUR
500+2.33 EUR
1000+1.98 EUR
2000+1.88 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
IQE004NE1LM7CGSCATMA1 Infineon-IQE004NE1LM7CGSC-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8ada5435018ae4c1f8664788
IQE004NE1LM7CGSCATMA1
Hersteller: Infineon Technologies
Description: TRENCH <= 40V
Packaging: Tape & Reel (TR)
Package / Case: 9-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Ta), 379A (Tc)
Rds On (Max) @ Id, Vgs: 0.45mOhm @ 30A, 7V
Power Dissipation (Max): 2.1W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2V @ 432µA
Supplier Device Package: PG-WHTFN-9
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V
Vgs (Max): ±7V
Drain to Source Voltage (Vdss): 15 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 7 V
Input Capacitance (Ciss) (Max) @ Vds: 6240 pF @ 7.5 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IQE004NE1LM7CGSCATMA1 Infineon-IQE004NE1LM7CGSC-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8ada5435018ae4c1f8664788
IQE004NE1LM7CGSCATMA1
Hersteller: Infineon Technologies
Description: TRENCH <= 40V
Packaging: Cut Tape (CT)
Package / Case: 9-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Ta), 379A (Tc)
Rds On (Max) @ Id, Vgs: 0.45mOhm @ 30A, 7V
Power Dissipation (Max): 2.1W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2V @ 432µA
Supplier Device Package: PG-WHTFN-9
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V
Vgs (Max): ±7V
Drain to Source Voltage (Vdss): 15 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 7 V
Input Capacitance (Ciss) (Max) @ Vds: 6240 pF @ 7.5 V
auf Bestellung 7847 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.78 EUR
10+2.7 EUR
100+1.96 EUR
500+1.68 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
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