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IPDQ65R080CFD7AXTMA1 IPDQ65R080CFD7AXTMA1 Infineon Technologies Infineon-IPDQ65R080CFD7A-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c869190210186cb8925fc33b4 Description: AUTOMOTIVE_COOLMOS
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 12.5A, 10V
Power Dissipation (Max): 223W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 630µA
Supplier Device Package: PG-HDSOP-22-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2513 pF @ 400 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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IPDQ65R080CFD7AXTMA1 IPDQ65R080CFD7AXTMA1 Infineon Technologies Infineon-IPDQ65R080CFD7A-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c869190210186cb8925fc33b4 Description: AUTOMOTIVE_COOLMOS
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 12.5A, 10V
Power Dissipation (Max): 223W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 630µA
Supplier Device Package: PG-HDSOP-22-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2513 pF @ 400 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 430 Stücke:
Lieferzeit 10-14 Tag (e)
2+9.45 EUR
10+7.24 EUR
25+6.68 EUR
100+6.07 EUR
250+5.78 EUR
Mindestbestellmenge: 2
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IPDQ65R060CFD7AXTMA1 IPDQ65R060CFD7AXTMA1 Infineon Technologies Infineon-IPDQ65R060CFD7A-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c869190210186cb77009433b1 Description: AUTOMOTIVE_COOLMOS
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 16.4A, 10V
Power Dissipation (Max): 272W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 820µA
Supplier Device Package: PG-HDSOP-22-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3288 pF @ 400 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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IPDQ65R060CFD7AXTMA1 IPDQ65R060CFD7AXTMA1 Infineon Technologies Infineon-IPDQ65R060CFD7A-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c869190210186cb77009433b1 Description: AUTOMOTIVE_COOLMOS
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 16.4A, 10V
Power Dissipation (Max): 272W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 820µA
Supplier Device Package: PG-HDSOP-22-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3288 pF @ 400 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 390 Stücke:
Lieferzeit 10-14 Tag (e)
2+11.44 EUR
10+8.81 EUR
25+8.15 EUR
100+7.43 EUR
250+7.09 EUR
Mindestbestellmenge: 2
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IPDQ65R040CFD7AXTMA1 IPDQ65R040CFD7AXTMA1 Infineon Technologies Infineon-IPDQ65R040CFD7A-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c869190210186cb76f2fa33ae Description: AUTOMOTIVE_COOLMOS
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 24.8A, 10V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.24mA
Supplier Device Package: PG-HDSOP-22-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 97 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4975 pF @ 400 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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IPDQ65R040CFD7AXTMA1 IPDQ65R040CFD7AXTMA1 Infineon Technologies Infineon-IPDQ65R040CFD7A-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c869190210186cb76f2fa33ae Description: AUTOMOTIVE_COOLMOS
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 24.8A, 10V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.24mA
Supplier Device Package: PG-HDSOP-22-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 97 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4975 pF @ 400 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 392 Stücke:
Lieferzeit 10-14 Tag (e)
2+15.29 EUR
10+11.89 EUR
25+11.04 EUR
100+10.11 EUR
250+9.66 EUR
Mindestbestellmenge: 2
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IPQC65R125CFD7AXTMA1 IPQC65R125CFD7AXTMA1 Infineon Technologies Infineon-IPQC65R125CFD7A-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c869190210186cba49d7333c4 Description: AUTOMOTIVE_COOLMOS
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 7.8A, 10V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 390µA
Supplier Device Package: PG-HDSOP-22-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1566 pF @ 400 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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IPQC65R125CFD7AXTMA1 IPQC65R125CFD7AXTMA1 Infineon Technologies Infineon-IPQC65R125CFD7A-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c869190210186cba49d7333c4 Description: AUTOMOTIVE_COOLMOS
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 7.8A, 10V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 390µA
Supplier Device Package: PG-HDSOP-22-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1566 pF @ 400 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 200 Stücke:
Lieferzeit 10-14 Tag (e)
3+6.88 EUR
10+5.20 EUR
25+4.78 EUR
100+4.32 EUR
Mindestbestellmenge: 3
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IPQC65R040CFD7AXTMA1 IPQC65R040CFD7AXTMA1 Infineon Technologies Infineon-IPQC65R040CFD7A-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c869190210186cb926a0f33c0 Description: AUTOMOTIVE_COOLMOS
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 24.8A, 10V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.24mA
Supplier Device Package: PG-HDSOP-22-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 97 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4975 pF @ 400 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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IPQC65R040CFD7AXTMA1 IPQC65R040CFD7AXTMA1 Infineon Technologies Infineon-IPQC65R040CFD7A-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c869190210186cb926a0f33c0 Description: AUTOMOTIVE_COOLMOS
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 24.8A, 10V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.24mA
Supplier Device Package: PG-HDSOP-22-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 97 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4975 pF @ 400 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 200 Stücke:
Lieferzeit 10-14 Tag (e)
2+15.29 EUR
10+11.89 EUR
25+11.04 EUR
100+10.11 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
IPDQ65R017CFD7AXTMA1 IPDQ65R017CFD7AXTMA1 Infineon Technologies Infineon-IPDQ65R017CFD7A-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c869190210186cb76d75333a8 Description: AUTOMOTIVE_COOLMOS
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 136A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 61.6A, 10V
Power Dissipation (Max): 694W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 3.08mA
Supplier Device Package: PG-HDSOP-22-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 236 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12338 pF @ 400 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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IPB133N12NM6ATMA1 Infineon Technologies Description: TRENCH >=100V
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BCR 162 B6327 BCR 162 B6327 Infineon Technologies bcr162series.pdf?folderId=db3a30431400ef68011406f3ddb1012e&fileId=db3a30431428a3730114402b1a4b02cf Description: TRANS PREBIAS PNP 50V SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5mA, 5V
Supplier Device Package: PG-SOT23
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
Resistors Included: R1 and R2
Produkt ist nicht verfügbar
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BB 814 B6327 GR1 BB 814 B6327 GR1 Infineon Technologies bb814series.pdf?folderId=db3a30431400ef680114267375cf0615&fileId=db3a304314dca389011527effe3e11da Description: DIODE VAR CAP 18V 50MA SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Diode Type: 1 Pair Common Cathode
Operating Temperature: -55°C ~ 125°C (TJ)
Capacitance @ Vr, F: 22.7pF @ 8V, 1MHz
Q @ Vr, F: 200 @ 2V, 100MHz
Capacitance Ratio Condition: C2/C8
Supplier Device Package: PG-SOT23
Voltage - Peak Reverse (Max): 18 V
Capacitance Ratio: 2.25
Produkt ist nicht verfügbar
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S6J311EHACSE20000 S6J311EHACSE20000 Infineon Technologies Infineon-S6J311E_S6J311D_32-Bit_Traveo_Family_S6J3110_Series_Microcontroller-AdditionalTechnicalInformation-v08_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eddb2f2623a Description: TRAVEO-55NM
Packaging: Tray
Package / Case: 176-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 144MHz
Program Memory Size: 4MB (4M x 8)
RAM Size: 384K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-R5
Data Converters: A/D 56x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.25V
Connectivity: CANbus, CSIO, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 176-LQFP (24x24)
Number of I/O: 116
Produkt ist nicht verfügbar
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S6J311EHBCSE20000 S6J311EHBCSE20000 Infineon Technologies Infineon-S6J311E_S6J311D_32-Bit_Traveo_Family_S6J3110_Series_Microcontroller-AdditionalTechnicalInformation-v08_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eddb2f2623a Description: TRAVEO-55NM
Packaging: Tray
Package / Case: 176-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 144MHz
Program Memory Size: 4MB (4M x 8)
RAM Size: 384K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-R5
Data Converters: A/D 56x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.25V
Connectivity: CANbus, CSIO, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 176-LQFP (24x24)
Number of I/O: 116
Produkt ist nicht verfügbar
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S6J311DHACSE20000 S6J311DHACSE20000 Infineon Technologies Infineon-S6J311E_S6J311D_32-Bit_Traveo_Family_S6J3110_Series_Microcontroller-AdditionalTechnicalInformation-v08_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eddb2f2623a Description: TRAVEO-55NM
Packaging: Tray
Package / Case: 176-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 144MHz
Program Memory Size: 3MB (3M x 8)
RAM Size: 320K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-R5
Data Converters: A/D 56x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.25V
Connectivity: CANbus, CSIO, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 176-LQFP (24x24)
Number of I/O: 116
Produkt ist nicht verfügbar
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S6J311EJACSE20000 S6J311EJACSE20000 Infineon Technologies Infineon-S6J311E_S6J311D_32-Bit_Traveo_Family_S6J3110_Series_Microcontroller-AdditionalTechnicalInformation-v08_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eddb2f2623a Description: TRAVEO-55NM
Packaging: Tray
Package / Case: 176-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 144MHz
Program Memory Size: 4MB (4M x 8)
RAM Size: 384K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-R5
Data Converters: A/D 64x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.25V
Connectivity: CANbus, CSIO, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 176-LQFP (24x24)
Number of I/O: 150
Produkt ist nicht verfügbar
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CY14V101Q3-SFXIT CY14V101Q3-SFXIT Infineon Technologies Infineon-CY14V101Q3-SFXI-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec0382a34be Description: IC NVSRAM 1MBIT SPI 30MHZ 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Clock Frequency: 30 MHz
Memory Format: NVSRAM
Supplier Device Package: 16-SOIC
Memory Interface: SPI
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IRFS59N10DPBF IRFS59N10DPBF Infineon Technologies irfb59n10dpbf.pdf?fileId=5546d462533600a40153561685d91e4c Description: MOSFET N-CH 100V 59A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 59A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 35.4A, 10V
Power Dissipation (Max): 3.8W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2450 pF @ 25 V
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IRFS5615TRLPBF IRFS5615TRLPBF Infineon Technologies IRFS%28L%295615PBF.pdf Description: MOSFET N-CH 150V 33A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 42mOhm @ 21A, 10V
Power Dissipation (Max): 144W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1750 pF @ 50 V
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IRFS5615TRLPBF IRFS5615TRLPBF Infineon Technologies IRFS%28L%295615PBF.pdf Description: MOSFET N-CH 150V 33A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 42mOhm @ 21A, 10V
Power Dissipation (Max): 144W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1750 pF @ 50 V
Produkt ist nicht verfügbar
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V611480NHPSA1 Infineon Technologies Infineon-Clamp_for_disc_devices_V61..N-DataSheet-v03_01-EN.pdf?fileId=5546d462525dbac401532d835a7e0b01 Description: CLAMP DISK DEVICES 48MM HOUSINGS
Packaging: Tray
Color: Natural
Length: 3.642" (92.51mm)
Shape: Rectangular
Type: Mount
Width: 2.165" (55.00mm)
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IRS2334STRPBF IRS2334STRPBF Infineon Technologies irs2334pbf.pdf?fileId=5546d462533600a40153567aa9fe280b Description: IC GATE DRVR HALF-BRIDGE 20SOIC
Packaging: Cut Tape (CT)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 20-SOIC
Rise / Fall Time (Typ): 125ns, 50ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 200mA, 350mA
DigiKey Programmable: Not Verified
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100+2.32 EUR
250+2.19 EUR
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IR2233PBF IR2233PBF Infineon Technologies IRSDS12168-1.pdf?t.download=true&u=5oefqw description Description: IC GATE DRVR HALF-BRIDGE 28DIP
Packaging: Bulk
Package / Case: 28-DIP (0.600", 15.24mm)
Mounting Type: Through Hole
Operating Temperature: 125°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 1200 V
Supplier Device Package: 28-PDIP
Rise / Fall Time (Typ): 90ns, 40ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2V
Current - Peak Output (Source, Sink): 250mA, 500mA
DigiKey Programmable: Not Verified
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XDPL8220XUMA1CT XDPL8220XUMA1CT Infineon Technologies INFN-S-A0002837987-1.pdf?t.download=true&u=ovmfp3 Description: XDPL822 - LED DRIVER DIMMABLE
Packaging: Bulk
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REFXDPL8210U35WTOBO1 REFXDPL8210U35WTOBO1 Infineon Technologies Infineon-Engineering_report_reference_board_REF_XDPL8210_U35W_XDP-ApplicationNotes-v01_01-EN.pdf?fileId=5546d46269e1c019016ac02cd4eb330e Description: EVAL BOARD FOR XDPL8210
Packaging: Bulk
Features: Dimmable
Voltage - Output: 18V ~ 54V
Voltage - Input: 90 ~ 305 VAC
Current - Output / Channel: 930mA
Utilized IC / Part: XDPL8210
Supplied Contents: Board(s)
Outputs and Type: 1 Isolated Output
Contents: Board(s)
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CY8C6148BZI-S2F44 CY8C6148BZI-S2F44 Infineon Technologies Infineon-PSoC_6_MCU_CY8C61x8_CY8C61xA-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eea1f6b72fa Description: IC MCU 32BIT 1MB FLASH 124VFBGA
Packaging: Tray
Package / Case: 124-VFBGA
Mounting Type: Surface Mount
Speed: 150MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 512K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 16x10b SAR, 16x12b Sigma-Delta; D/A 2x7/8b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
Connectivity: eMMC/SD/SDIO, FIFO, I²C, IrDA, LINbus, Microwire, QSPI, SmartCard, SPI, SSP, UART/USART, USB
Peripherals: Brown-out Detect/Reset, CapSense, Crypto - AES, DMA, I²S, LCD, LVD, PMC, POR, PWM, RSA, SHA, Temp Sensor, TRNG, WDT
Supplier Device Package: 124-VFBGA (9x9)
Number of I/O: 100
DigiKey Programmable: Not Verified
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CY8C614AAZI-S2F04 Infineon Technologies Infineon-PSoC_6_MCU_CY8C61x8_CY8C61xA-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eea1f6b72fa Description: IC MCU 32BIT 2MB FLASH 128TQFP
Packaging: Tray
Package / Case: 128-LQFP
Mounting Type: Surface Mount
Speed: 100MHz, 150MHz
Program Memory Size: 2MB (2M x 8)
RAM Size: 1M x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
Data Converters: A/D 16x8 SAR, 16x10/12b Sigma-Delta; D/A 2x7/8b
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
Connectivity: eMMC/SD/SDIO, I²C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART, USB
Peripherals: Brown-out Detect/Reset, DMA, I²S, LCD, LVD, POR, PWM, Temp Sensor, WDT
Supplier Device Package: 128-TQFP (14x20)
Number of I/O: 102
DigiKey Programmable: Not Verified
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XMC7100-F100K1088AA XMC7100-F100K1088AA Infineon Technologies Infineon-XMC-7100-Datasheet-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8412f8d30184443160ae4415 Description: INDUSTRIAL MCUS
Packaging: Tray
Package / Case: 100-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 100MHz, 250MHz
Program Memory Size: 1.088M x 8
RAM Size: 192K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7
Data Converters: A/D 37x12b SAR
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, Ethernet, FIFO, I2C, IrDA, MMC/SD/SDIO, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, LVD, POR, PWM, SHA, Temp Sensor, TRNG, WDT
Supplier Device Package: 100-TEQFP (14x14)
Number of I/O: 72
Produkt ist nicht verfügbar
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CYAT817L-100AA72 Infineon Technologies Infineon-CYAT817L-100AA72-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c82ce566401837edadb500bad Description: PSOC BASED - TRUETOUCH
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 48KB (48K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: I2C, SPI, UART/USART
Peripherals: PWM
Supplier Device Package: PG-TQFP-100-801
Number of I/O: 29
Grade: Automotive
Qualification: AEC-Q100
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CYAT817LS-100AA72 Infineon Technologies Infineon-CYAT817L-100AA72-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c82ce566401837edadb500bad Description: PSOC BASED - TRUETOUCH
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 48KB (48K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: I2C, SPI, UART/USART
Peripherals: PWM
Supplier Device Package: PG-TQFP-100-801
Number of I/O: 29
Grade: Automotive
Qualification: AEC-Q100
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CYAT817L-100AS72 Infineon Technologies Infineon-CYAT817L-100AA72-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c82ce566401837edadb500bad Description: PSOC BASED - TRUETOUCH
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 48KB (48K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 105°C
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: I2C, SPI, UART/USART
Peripherals: PWM
Supplier Device Package: PG-TQFP-100-801
Number of I/O: 29
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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CYAT817LS-100AS72 CYAT817LS-100AS72 Infineon Technologies Infineon-CYAT817L-100AA72-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c82ce566401837edadb500bad Description: PSOC BASED - TRUETOUCH
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 48KB (48K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 105°C
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: I2C, SPI, UART/USART
Peripherals: PWM
Supplier Device Package: PG-TQFP-100-801
Number of I/O: 29
Grade: Automotive
Qualification: AEC-Q100
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1+34.69 EUR
10+27.79 EUR
90+24.29 EUR
180+23.57 EUR
270+23.20 EUR
540+22.67 EUR
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IRGP4640-EPBF IRGP4640-EPBF Infineon Technologies IRGP4640%28-E%29PBF.pdf Description: IGBT 600V 65A 250W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 24A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 40ns/105ns
Switching Energy: 100µJ (on), 600µJ (off)
Test Condition: 400V, 24A, 10Ohm, 15V
Gate Charge: 75 nC
Current - Collector (Ic) (Max): 65 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 72 A
Power - Max: 250 W
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IRGP4640-EPBF IRGP4640-EPBF Infineon Technologies IRGP4640%28-E%29PBF.pdf Description: IGBT 600V 65A 250W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 24A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 40ns/105ns
Switching Energy: 100µJ (on), 600µJ (off)
Test Condition: 400V, 24A, 10Ohm, 15V
Gate Charge: 75 nC
Current - Collector (Ic) (Max): 65 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 72 A
Power - Max: 250 W
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F433MR12W1M1HB70BPSA1 Infineon Technologies Description: LOW POWER EASY
Packaging: Tray
Produkt ist nicht verfügbar
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IRF7410GTRPBF IRF7410GTRPBF Infineon Technologies IRF7410GPBF.pdf Description: MOSFET P-CH 12V 16A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta)
Rds On (Max) @ Id, Vgs: 7mOhm @ 16A, 4.5V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 8676 pF @ 10 V
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IRF7410GTRPBF IRF7410GTRPBF Infineon Technologies IRF7410GPBF.pdf Description: MOSFET P-CH 12V 16A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta)
Rds On (Max) @ Id, Vgs: 7mOhm @ 16A, 4.5V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 8676 pF @ 10 V
Produkt ist nicht verfügbar
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AUIRS2110S AUIRS2110S Infineon Technologies auirs2110.pdf?fileId=5546d462533600a4015355bf39ce15a6 Description: IC GATE DRVR HALF-BRIDGE 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 3V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 500 V
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 25ns, 15ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 6V, 9.5V
Current - Peak Output (Source, Sink): 2.5A, 2.5A
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
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FS100R12KT3BOSA1 FS100R12KT3BOSA1 Infineon Technologies Infineon-FS100R12KT3-DS-v02_01-en_de.pdf?fileId=db3a304412b407950112b431b56f553f Description: IGBT MOD 1200V 140A 480W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 100A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 140 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 480 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 7.1 nF @ 25 V
auf Bestellung 6 Stücke:
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CYUSB3314-88LTXC CYUSB3314-88LTXC Infineon Technologies Infineon-CYUSB330x_CYUSB331x_CYUSB332x_HX3_USB_3.0_Hub-DataSheet-v21_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecb53f644b8&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC USB 3.0 HUB 4-PORT 88QFN
Packaging: Tray
Package / Case: 88-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C
RAM Size: 16K x 8
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 1.14V ~ 1.26V, 2.5V ~ 2.7V, 3V ~ 3.6V
Controller Series: CYUSB
Program Memory Type: ROM (32kB)
Applications: USB 3.0 Hub Controller
Core Processor: ARM® Cortex®-M0
Supplier Device Package: 88-QFN (10x10)
Number of I/O: 10
DigiKey Programmable: Not Verified
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IRFL024NPBF IRFL024NPBF Infineon Technologies irfl024npbf.pdf?fileId=5546d462533600a401535627cdd51fae description Description: MOSFET N-CH 55V 2.8A SOT223
Packaging: Tube
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta)
Rds On (Max) @ Id, Vgs: 75mOhm @ 2.8A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-223
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 18.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V
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AUIRFL024NTR AUIRFL024NTR Infineon Technologies AUIRFL024N.pdf Description: MOSFET N-CH 55V 2.8A SOT-223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta)
Rds On (Max) @ Id, Vgs: 75mOhm @ 2.8A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-223
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 18.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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IRF7331TRPBF IRF7331TRPBF Infineon Technologies IRF7331PbF.pdf description Description: MOSFET 2N-CH 20V 7A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 7A
Input Capacitance (Ciss) (Max) @ Vds: 1340pF @ 16V
Rds On (Max) @ Id, Vgs: 30mOhm @ 7A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: 8-SO
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IRF7331TRPBF IRF7331TRPBF Infineon Technologies IRF7331PbF.pdf description Description: MOSFET 2N-CH 20V 7A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 7A
Input Capacitance (Ciss) (Max) @ Vds: 1340pF @ 16V
Rds On (Max) @ Id, Vgs: 30mOhm @ 7A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: 8-SO
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CY14B108N-BA25XI CY14B108N-BA25XI Infineon Technologies Infineon-CY14B108L_CY14B108N_8-Mbit_(1024_K_8_512_K_16)_nvSRAM-DataSheet-v17_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebf410c3369&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC NVSRAM 8MBIT PARALLEL 48FBGA
Packaging: Tray
Package / Case: 48-TFBGA
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 48-FBGA (6x10)
Write Cycle Time - Word, Page: 25ns
Memory Interface: Parallel
Access Time: 25 ns
Memory Organization: 512K x 16
DigiKey Programmable: Not Verified
auf Bestellung 282 Stücke:
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1+124.31 EUR
10+114.68 EUR
25+110.91 EUR
50+108.11 EUR
100+105.36 EUR
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IRS26302DJTRPBF IRS26302DJTRPBF Infineon Technologies irs26302dpbf.pdf?fileId=5546d462533600a40153567b681d2845 Description: IC GATE DRVR HALF-BRIDGE 44PLCC
Packaging: Tape & Reel (TR)
Package / Case: 44-LCC (J-Lead), 32 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 44-PLCC, 32 Leads (16.58x16.58)
Rise / Fall Time (Typ): 125ns, 50ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 200mA, 350mA
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IRS26302DJTRPBF IRS26302DJTRPBF Infineon Technologies irs26302dpbf.pdf?fileId=5546d462533600a40153567b681d2845 Description: IC GATE DRVR HALF-BRIDGE 44PLCC
Packaging: Cut Tape (CT)
Package / Case: 44-LCC (J-Lead), 32 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 44-PLCC, 32 Leads (16.58x16.58)
Rise / Fall Time (Typ): 125ns, 50ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 200mA, 350mA
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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EVALCOOLSIC2KVHCCTOBO1 EVALCOOLSIC2KVHCCTOBO1 Infineon Technologies Infineon-IMYH200R024M1H-DataSheet-v01_10-EN.pdf?fileId=8ac78c8c85c5e5aa0185c6eed3db1114 Description: EVAL BOARD FOR 1ED3124MU12H1200
Packaging: Bulk
Function: MOSFET
Type: Power Management
Utilized IC / Part: 1ED3124MU12H1200
Supplied Contents: Board(s)
Primary Attributes: Isolated
Embedded: Yes, MCU
Contents: Board(s)
Secondary Attributes: On-Board LEDs
auf Bestellung 4 Stücke:
Lieferzeit 10-14 Tag (e)
1+996.72 EUR
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AN2131-DK001 AN2131-DK001 Infineon Technologies AN2131SC,QC,AN2135SC,36SC.pdf Description: KIT EZ-USB DEVELOPMENT BOARD
Function: USB
Type: Interface
Supplied Contents: Board(s)
Produkt ist nicht verfügbar
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IRLML6401GTRPBF IRLML6401GTRPBF Infineon Technologies irlml6401gpbf.pdf?fileId=5546d462533600a401535668b04c2632 Description: MOSFET P-CH 12V 4.3A SOT-23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 4.3A, 4.5V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: Micro3™/SOT-23
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 830 pF @ 10 V
Produkt ist nicht verfügbar
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IRLML6401GTRPBF IRLML6401GTRPBF Infineon Technologies irlml6401gpbf.pdf?fileId=5546d462533600a401535668b04c2632 Description: MOSFET P-CH 12V 4.3A SOT-23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 4.3A, 4.5V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: Micro3™/SOT-23
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 830 pF @ 10 V
Produkt ist nicht verfügbar
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IRLML2402GTRPBF IRLML2402GTRPBF Infineon Technologies irlml2402gpbf.pdf?fileId=5546d462533600a401535664ddb925f8 Description: MOSFET N-CH 20V 1.2A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta)
Rds On (Max) @ Id, Vgs: 250mOhm @ 930mA, 4.5V
Power Dissipation (Max): 540mW (Ta)
Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
Supplier Device Package: Micro3™/SOT-23
Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 3.9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 15 V
Produkt ist nicht verfügbar
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IRLML2402GTRPBF IRLML2402GTRPBF Infineon Technologies irlml2402gpbf.pdf?fileId=5546d462533600a401535664ddb925f8 Description: MOSFET N-CH 20V 1.2A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta)
Rds On (Max) @ Id, Vgs: 250mOhm @ 930mA, 4.5V
Power Dissipation (Max): 540mW (Ta)
Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
Supplier Device Package: Micro3™/SOT-23
Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 3.9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 15 V
Produkt ist nicht verfügbar
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IRLML6302GTRPBF IRLML6302GTRPBF Infineon Technologies irlml6302gpbf.pdf?fileId=5546d462533600a40153566883212625 Description: MOSFET P-CH 20V 780MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 780mA (Ta)
Rds On (Max) @ Id, Vgs: 600mOhm @ 610mA, 4.5V
Power Dissipation (Max): 540mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: Micro3™/SOT-23
Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 3.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 97 pF @ 15 V
Produkt ist nicht verfügbar
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IRLML6302GTRPBF IRLML6302GTRPBF Infineon Technologies irlml6302gpbf.pdf?fileId=5546d462533600a40153566883212625 Description: MOSFET P-CH 20V 780MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 780mA (Ta)
Rds On (Max) @ Id, Vgs: 600mOhm @ 610mA, 4.5V
Power Dissipation (Max): 540mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: Micro3™/SOT-23
Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 3.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 97 pF @ 15 V
Produkt ist nicht verfügbar
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IRG4PSH71UDPBF IRG4PSH71UDPBF Infineon Technologies irg4psh71udpbf.pdf?fileId=5546d462533600a401535648c1bb233d description Description: IGBT 1200V 99A SUPER247
Packaging: Tube
Package / Case: TO-274AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 110 ns
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 70A
Supplier Device Package: SUPER-247™ (TO-274AA)
Td (on/off) @ 25°C: 46ns/250ns
Switching Energy: 8.8mJ (on), 9.4mJ (off)
Test Condition: 960V, 70A, 5Ohm, 15V
Gate Charge: 380 nC
Current - Collector (Ic) (Max): 99 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 350 W
Produkt ist nicht verfügbar
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2EDN7533GXTMA1 2EDN7533GXTMA1 Infineon Technologies Description: IC GATE DRVR LOW-SIDE 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-WDFN Exposed Pad
Supplier Device Package: PG-WSON-8-1
Driven Configuration: Low-Side
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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2EDN8523GXTMA1 2EDN8523GXTMA1 Infineon Technologies Infineon-2EDN752x-2EDN852x-DS--DS-v02_03-EN.pdf?fileId=5546d462525dbac40152abcc7dbb1727 Description: IC GATE DRVR LOW-SIDE 8WSON
Packaging: Cut Tape (CT)
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 20V
Input Type: Inverting
Supplier Device Package: PG-WSON-8-1
Rise / Fall Time (Typ): 5.3ns, 4.5ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 1.1V, 1.98V
Current - Peak Output (Source, Sink): 5A, 5A
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IPDQ65R080CFD7AXTMA1 Infineon-IPDQ65R080CFD7A-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c869190210186cb8925fc33b4
IPDQ65R080CFD7AXTMA1
Hersteller: Infineon Technologies
Description: AUTOMOTIVE_COOLMOS
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 12.5A, 10V
Power Dissipation (Max): 223W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 630µA
Supplier Device Package: PG-HDSOP-22-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2513 pF @ 400 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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IPDQ65R080CFD7AXTMA1 Infineon-IPDQ65R080CFD7A-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c869190210186cb8925fc33b4
IPDQ65R080CFD7AXTMA1
Hersteller: Infineon Technologies
Description: AUTOMOTIVE_COOLMOS
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 12.5A, 10V
Power Dissipation (Max): 223W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 630µA
Supplier Device Package: PG-HDSOP-22-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2513 pF @ 400 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 430 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+9.45 EUR
10+7.24 EUR
25+6.68 EUR
100+6.07 EUR
250+5.78 EUR
Mindestbestellmenge: 2
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IPDQ65R060CFD7AXTMA1 Infineon-IPDQ65R060CFD7A-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c869190210186cb77009433b1
IPDQ65R060CFD7AXTMA1
Hersteller: Infineon Technologies
Description: AUTOMOTIVE_COOLMOS
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 16.4A, 10V
Power Dissipation (Max): 272W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 820µA
Supplier Device Package: PG-HDSOP-22-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3288 pF @ 400 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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IPDQ65R060CFD7AXTMA1 Infineon-IPDQ65R060CFD7A-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c869190210186cb77009433b1
IPDQ65R060CFD7AXTMA1
Hersteller: Infineon Technologies
Description: AUTOMOTIVE_COOLMOS
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 16.4A, 10V
Power Dissipation (Max): 272W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 820µA
Supplier Device Package: PG-HDSOP-22-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3288 pF @ 400 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 390 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+11.44 EUR
10+8.81 EUR
25+8.15 EUR
100+7.43 EUR
250+7.09 EUR
Mindestbestellmenge: 2
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IPDQ65R040CFD7AXTMA1 Infineon-IPDQ65R040CFD7A-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c869190210186cb76f2fa33ae
IPDQ65R040CFD7AXTMA1
Hersteller: Infineon Technologies
Description: AUTOMOTIVE_COOLMOS
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 24.8A, 10V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.24mA
Supplier Device Package: PG-HDSOP-22-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 97 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4975 pF @ 400 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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IPDQ65R040CFD7AXTMA1 Infineon-IPDQ65R040CFD7A-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c869190210186cb76f2fa33ae
IPDQ65R040CFD7AXTMA1
Hersteller: Infineon Technologies
Description: AUTOMOTIVE_COOLMOS
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 24.8A, 10V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.24mA
Supplier Device Package: PG-HDSOP-22-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 97 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4975 pF @ 400 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 392 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+15.29 EUR
10+11.89 EUR
25+11.04 EUR
100+10.11 EUR
250+9.66 EUR
Mindestbestellmenge: 2
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IPQC65R125CFD7AXTMA1 Infineon-IPQC65R125CFD7A-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c869190210186cba49d7333c4
IPQC65R125CFD7AXTMA1
Hersteller: Infineon Technologies
Description: AUTOMOTIVE_COOLMOS
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 7.8A, 10V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 390µA
Supplier Device Package: PG-HDSOP-22-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1566 pF @ 400 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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IPQC65R125CFD7AXTMA1 Infineon-IPQC65R125CFD7A-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c869190210186cba49d7333c4
IPQC65R125CFD7AXTMA1
Hersteller: Infineon Technologies
Description: AUTOMOTIVE_COOLMOS
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 7.8A, 10V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 390µA
Supplier Device Package: PG-HDSOP-22-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1566 pF @ 400 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 200 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.88 EUR
10+5.20 EUR
25+4.78 EUR
100+4.32 EUR
Mindestbestellmenge: 3
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IPQC65R040CFD7AXTMA1 Infineon-IPQC65R040CFD7A-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c869190210186cb926a0f33c0
IPQC65R040CFD7AXTMA1
Hersteller: Infineon Technologies
Description: AUTOMOTIVE_COOLMOS
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 24.8A, 10V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.24mA
Supplier Device Package: PG-HDSOP-22-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 97 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4975 pF @ 400 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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IPQC65R040CFD7AXTMA1 Infineon-IPQC65R040CFD7A-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c869190210186cb926a0f33c0
IPQC65R040CFD7AXTMA1
Hersteller: Infineon Technologies
Description: AUTOMOTIVE_COOLMOS
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 24.8A, 10V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.24mA
Supplier Device Package: PG-HDSOP-22-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 97 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4975 pF @ 400 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 200 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+15.29 EUR
10+11.89 EUR
25+11.04 EUR
100+10.11 EUR
Mindestbestellmenge: 2
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IPDQ65R017CFD7AXTMA1 Infineon-IPDQ65R017CFD7A-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c869190210186cb76d75333a8
IPDQ65R017CFD7AXTMA1
Hersteller: Infineon Technologies
Description: AUTOMOTIVE_COOLMOS
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 136A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 61.6A, 10V
Power Dissipation (Max): 694W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 3.08mA
Supplier Device Package: PG-HDSOP-22-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 236 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12338 pF @ 400 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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IPB133N12NM6ATMA1
Hersteller: Infineon Technologies
Description: TRENCH >=100V
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BCR 162 B6327 bcr162series.pdf?folderId=db3a30431400ef68011406f3ddb1012e&fileId=db3a30431428a3730114402b1a4b02cf
BCR 162 B6327
Hersteller: Infineon Technologies
Description: TRANS PREBIAS PNP 50V SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5mA, 5V
Supplier Device Package: PG-SOT23
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
Resistors Included: R1 and R2
Produkt ist nicht verfügbar
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BB 814 B6327 GR1 bb814series.pdf?folderId=db3a30431400ef680114267375cf0615&fileId=db3a304314dca389011527effe3e11da
BB 814 B6327 GR1
Hersteller: Infineon Technologies
Description: DIODE VAR CAP 18V 50MA SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Diode Type: 1 Pair Common Cathode
Operating Temperature: -55°C ~ 125°C (TJ)
Capacitance @ Vr, F: 22.7pF @ 8V, 1MHz
Q @ Vr, F: 200 @ 2V, 100MHz
Capacitance Ratio Condition: C2/C8
Supplier Device Package: PG-SOT23
Voltage - Peak Reverse (Max): 18 V
Capacitance Ratio: 2.25
Produkt ist nicht verfügbar
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S6J311EHACSE20000 Infineon-S6J311E_S6J311D_32-Bit_Traveo_Family_S6J3110_Series_Microcontroller-AdditionalTechnicalInformation-v08_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eddb2f2623a
S6J311EHACSE20000
Hersteller: Infineon Technologies
Description: TRAVEO-55NM
Packaging: Tray
Package / Case: 176-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 144MHz
Program Memory Size: 4MB (4M x 8)
RAM Size: 384K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-R5
Data Converters: A/D 56x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.25V
Connectivity: CANbus, CSIO, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 176-LQFP (24x24)
Number of I/O: 116
Produkt ist nicht verfügbar
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S6J311EHBCSE20000 Infineon-S6J311E_S6J311D_32-Bit_Traveo_Family_S6J3110_Series_Microcontroller-AdditionalTechnicalInformation-v08_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eddb2f2623a
S6J311EHBCSE20000
Hersteller: Infineon Technologies
Description: TRAVEO-55NM
Packaging: Tray
Package / Case: 176-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 144MHz
Program Memory Size: 4MB (4M x 8)
RAM Size: 384K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-R5
Data Converters: A/D 56x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.25V
Connectivity: CANbus, CSIO, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 176-LQFP (24x24)
Number of I/O: 116
Produkt ist nicht verfügbar
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S6J311DHACSE20000 Infineon-S6J311E_S6J311D_32-Bit_Traveo_Family_S6J3110_Series_Microcontroller-AdditionalTechnicalInformation-v08_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eddb2f2623a
S6J311DHACSE20000
Hersteller: Infineon Technologies
Description: TRAVEO-55NM
Packaging: Tray
Package / Case: 176-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 144MHz
Program Memory Size: 3MB (3M x 8)
RAM Size: 320K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-R5
Data Converters: A/D 56x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.25V
Connectivity: CANbus, CSIO, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 176-LQFP (24x24)
Number of I/O: 116
Produkt ist nicht verfügbar
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S6J311EJACSE20000 Infineon-S6J311E_S6J311D_32-Bit_Traveo_Family_S6J3110_Series_Microcontroller-AdditionalTechnicalInformation-v08_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eddb2f2623a
S6J311EJACSE20000
Hersteller: Infineon Technologies
Description: TRAVEO-55NM
Packaging: Tray
Package / Case: 176-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 144MHz
Program Memory Size: 4MB (4M x 8)
RAM Size: 384K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-R5
Data Converters: A/D 64x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.25V
Connectivity: CANbus, CSIO, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 176-LQFP (24x24)
Number of I/O: 150
Produkt ist nicht verfügbar
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CY14V101Q3-SFXIT Infineon-CY14V101Q3-SFXI-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec0382a34be
CY14V101Q3-SFXIT
Hersteller: Infineon Technologies
Description: IC NVSRAM 1MBIT SPI 30MHZ 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Clock Frequency: 30 MHz
Memory Format: NVSRAM
Supplier Device Package: 16-SOIC
Memory Interface: SPI
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IRFS59N10DPBF irfb59n10dpbf.pdf?fileId=5546d462533600a40153561685d91e4c
IRFS59N10DPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 59A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 59A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 35.4A, 10V
Power Dissipation (Max): 3.8W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2450 pF @ 25 V
Produkt ist nicht verfügbar
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IRFS5615TRLPBF IRFS%28L%295615PBF.pdf
IRFS5615TRLPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 150V 33A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 42mOhm @ 21A, 10V
Power Dissipation (Max): 144W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1750 pF @ 50 V
Produkt ist nicht verfügbar
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IRFS5615TRLPBF IRFS%28L%295615PBF.pdf
IRFS5615TRLPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 150V 33A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 42mOhm @ 21A, 10V
Power Dissipation (Max): 144W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1750 pF @ 50 V
Produkt ist nicht verfügbar
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V611480NHPSA1 Infineon-Clamp_for_disc_devices_V61..N-DataSheet-v03_01-EN.pdf?fileId=5546d462525dbac401532d835a7e0b01
Hersteller: Infineon Technologies
Description: CLAMP DISK DEVICES 48MM HOUSINGS
Packaging: Tray
Color: Natural
Length: 3.642" (92.51mm)
Shape: Rectangular
Type: Mount
Width: 2.165" (55.00mm)
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+117.66 EUR
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IRS2334STRPBF irs2334pbf.pdf?fileId=5546d462533600a40153567aa9fe280b
IRS2334STRPBF
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 20SOIC
Packaging: Cut Tape (CT)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 20-SOIC
Rise / Fall Time (Typ): 125ns, 50ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 200mA, 350mA
DigiKey Programmable: Not Verified
auf Bestellung 453 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.84 EUR
10+2.84 EUR
25+2.59 EUR
100+2.32 EUR
250+2.19 EUR
Mindestbestellmenge: 5
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IR2233PBF description IRSDS12168-1.pdf?t.download=true&u=5oefqw
IR2233PBF
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 28DIP
Packaging: Bulk
Package / Case: 28-DIP (0.600", 15.24mm)
Mounting Type: Through Hole
Operating Temperature: 125°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 1200 V
Supplier Device Package: 28-PDIP
Rise / Fall Time (Typ): 90ns, 40ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2V
Current - Peak Output (Source, Sink): 250mA, 500mA
DigiKey Programmable: Not Verified
auf Bestellung 6217 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
22+21.62 EUR
Mindestbestellmenge: 22
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XDPL8220XUMA1CT INFN-S-A0002837987-1.pdf?t.download=true&u=ovmfp3
XDPL8220XUMA1CT
Hersteller: Infineon Technologies
Description: XDPL822 - LED DRIVER DIMMABLE
Packaging: Bulk
auf Bestellung 1930 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
208+2.35 EUR
Mindestbestellmenge: 208
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REFXDPL8210U35WTOBO1 Infineon-Engineering_report_reference_board_REF_XDPL8210_U35W_XDP-ApplicationNotes-v01_01-EN.pdf?fileId=5546d46269e1c019016ac02cd4eb330e
REFXDPL8210U35WTOBO1
Hersteller: Infineon Technologies
Description: EVAL BOARD FOR XDPL8210
Packaging: Bulk
Features: Dimmable
Voltage - Output: 18V ~ 54V
Voltage - Input: 90 ~ 305 VAC
Current - Output / Channel: 930mA
Utilized IC / Part: XDPL8210
Supplied Contents: Board(s)
Outputs and Type: 1 Isolated Output
Contents: Board(s)
auf Bestellung 5 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+185.35 EUR
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CY8C6148BZI-S2F44 Infineon-PSoC_6_MCU_CY8C61x8_CY8C61xA-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eea1f6b72fa
CY8C6148BZI-S2F44
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 1MB FLASH 124VFBGA
Packaging: Tray
Package / Case: 124-VFBGA
Mounting Type: Surface Mount
Speed: 150MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 512K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 16x10b SAR, 16x12b Sigma-Delta; D/A 2x7/8b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
Connectivity: eMMC/SD/SDIO, FIFO, I²C, IrDA, LINbus, Microwire, QSPI, SmartCard, SPI, SSP, UART/USART, USB
Peripherals: Brown-out Detect/Reset, CapSense, Crypto - AES, DMA, I²S, LCD, LVD, PMC, POR, PWM, RSA, SHA, Temp Sensor, TRNG, WDT
Supplier Device Package: 124-VFBGA (9x9)
Number of I/O: 100
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY8C614AAZI-S2F04 Infineon-PSoC_6_MCU_CY8C61x8_CY8C61xA-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eea1f6b72fa
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 2MB FLASH 128TQFP
Packaging: Tray
Package / Case: 128-LQFP
Mounting Type: Surface Mount
Speed: 100MHz, 150MHz
Program Memory Size: 2MB (2M x 8)
RAM Size: 1M x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
Data Converters: A/D 16x8 SAR, 16x10/12b Sigma-Delta; D/A 2x7/8b
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
Connectivity: eMMC/SD/SDIO, I²C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART, USB
Peripherals: Brown-out Detect/Reset, DMA, I²S, LCD, LVD, POR, PWM, Temp Sensor, WDT
Supplier Device Package: 128-TQFP (14x20)
Number of I/O: 102
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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XMC7100-F100K1088AA Infineon-XMC-7100-Datasheet-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8412f8d30184443160ae4415
XMC7100-F100K1088AA
Hersteller: Infineon Technologies
Description: INDUSTRIAL MCUS
Packaging: Tray
Package / Case: 100-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 100MHz, 250MHz
Program Memory Size: 1.088M x 8
RAM Size: 192K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7
Data Converters: A/D 37x12b SAR
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, Ethernet, FIFO, I2C, IrDA, MMC/SD/SDIO, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, LVD, POR, PWM, SHA, Temp Sensor, TRNG, WDT
Supplier Device Package: 100-TEQFP (14x14)
Number of I/O: 72
Produkt ist nicht verfügbar
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CYAT817L-100AA72 Infineon-CYAT817L-100AA72-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c82ce566401837edadb500bad
Hersteller: Infineon Technologies
Description: PSOC BASED - TRUETOUCH
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 48KB (48K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: I2C, SPI, UART/USART
Peripherals: PWM
Supplier Device Package: PG-TQFP-100-801
Number of I/O: 29
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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CYAT817LS-100AA72 Infineon-CYAT817L-100AA72-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c82ce566401837edadb500bad
Hersteller: Infineon Technologies
Description: PSOC BASED - TRUETOUCH
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 48KB (48K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: I2C, SPI, UART/USART
Peripherals: PWM
Supplier Device Package: PG-TQFP-100-801
Number of I/O: 29
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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CYAT817L-100AS72 Infineon-CYAT817L-100AA72-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c82ce566401837edadb500bad
Hersteller: Infineon Technologies
Description: PSOC BASED - TRUETOUCH
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 48KB (48K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 105°C
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: I2C, SPI, UART/USART
Peripherals: PWM
Supplier Device Package: PG-TQFP-100-801
Number of I/O: 29
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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CYAT817LS-100AS72 Infineon-CYAT817L-100AA72-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c82ce566401837edadb500bad
CYAT817LS-100AS72
Hersteller: Infineon Technologies
Description: PSOC BASED - TRUETOUCH
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 48KB (48K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 105°C
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: I2C, SPI, UART/USART
Peripherals: PWM
Supplier Device Package: PG-TQFP-100-801
Number of I/O: 29
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 899 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+34.69 EUR
10+27.79 EUR
90+24.29 EUR
180+23.57 EUR
270+23.20 EUR
540+22.67 EUR
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IRGP4640-EPBF IRGP4640%28-E%29PBF.pdf
IRGP4640-EPBF
Hersteller: Infineon Technologies
Description: IGBT 600V 65A 250W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 24A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 40ns/105ns
Switching Energy: 100µJ (on), 600µJ (off)
Test Condition: 400V, 24A, 10Ohm, 15V
Gate Charge: 75 nC
Current - Collector (Ic) (Max): 65 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 72 A
Power - Max: 250 W
auf Bestellung 212 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
136+3.51 EUR
Mindestbestellmenge: 136
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IRGP4640-EPBF IRGP4640%28-E%29PBF.pdf
IRGP4640-EPBF
Hersteller: Infineon Technologies
Description: IGBT 600V 65A 250W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 24A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 40ns/105ns
Switching Energy: 100µJ (on), 600µJ (off)
Test Condition: 400V, 24A, 10Ohm, 15V
Gate Charge: 75 nC
Current - Collector (Ic) (Max): 65 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 72 A
Power - Max: 250 W
Produkt ist nicht verfügbar
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F433MR12W1M1HB70BPSA1
Hersteller: Infineon Technologies
Description: LOW POWER EASY
Packaging: Tray
Produkt ist nicht verfügbar
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IRF7410GTRPBF IRF7410GPBF.pdf
IRF7410GTRPBF
Hersteller: Infineon Technologies
Description: MOSFET P-CH 12V 16A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta)
Rds On (Max) @ Id, Vgs: 7mOhm @ 16A, 4.5V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 8676 pF @ 10 V
Produkt ist nicht verfügbar
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IRF7410GTRPBF IRF7410GPBF.pdf
IRF7410GTRPBF
Hersteller: Infineon Technologies
Description: MOSFET P-CH 12V 16A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta)
Rds On (Max) @ Id, Vgs: 7mOhm @ 16A, 4.5V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 8676 pF @ 10 V
Produkt ist nicht verfügbar
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AUIRS2110S auirs2110.pdf?fileId=5546d462533600a4015355bf39ce15a6
AUIRS2110S
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 3V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 500 V
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 25ns, 15ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 6V, 9.5V
Current - Peak Output (Source, Sink): 2.5A, 2.5A
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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FS100R12KT3BOSA1 Infineon-FS100R12KT3-DS-v02_01-en_de.pdf?fileId=db3a304412b407950112b431b56f553f
FS100R12KT3BOSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 140A 480W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 100A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 140 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 480 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 7.1 nF @ 25 V
auf Bestellung 6 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+271.96 EUR
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CYUSB3314-88LTXC Infineon-CYUSB330x_CYUSB331x_CYUSB332x_HX3_USB_3.0_Hub-DataSheet-v21_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecb53f644b8&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CYUSB3314-88LTXC
Hersteller: Infineon Technologies
Description: IC USB 3.0 HUB 4-PORT 88QFN
Packaging: Tray
Package / Case: 88-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C
RAM Size: 16K x 8
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 1.14V ~ 1.26V, 2.5V ~ 2.7V, 3V ~ 3.6V
Controller Series: CYUSB
Program Memory Type: ROM (32kB)
Applications: USB 3.0 Hub Controller
Core Processor: ARM® Cortex®-M0
Supplier Device Package: 88-QFN (10x10)
Number of I/O: 10
DigiKey Programmable: Not Verified
auf Bestellung 2255 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+9.01 EUR
10+6.89 EUR
25+6.36 EUR
168+5.61 EUR
336+5.43 EUR
504+5.33 EUR
1008+5.19 EUR
Mindestbestellmenge: 2
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IRFL024NPBF description irfl024npbf.pdf?fileId=5546d462533600a401535627cdd51fae
IRFL024NPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 2.8A SOT223
Packaging: Tube
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta)
Rds On (Max) @ Id, Vgs: 75mOhm @ 2.8A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-223
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 18.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V
Produkt ist nicht verfügbar
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AUIRFL024NTR AUIRFL024N.pdf
AUIRFL024NTR
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 2.8A SOT-223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta)
Rds On (Max) @ Id, Vgs: 75mOhm @ 2.8A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-223
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 18.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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IRF7331TRPBF description IRF7331PbF.pdf
IRF7331TRPBF
Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 20V 7A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 7A
Input Capacitance (Ciss) (Max) @ Vds: 1340pF @ 16V
Rds On (Max) @ Id, Vgs: 30mOhm @ 7A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: 8-SO
Produkt ist nicht verfügbar
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IRF7331TRPBF description IRF7331PbF.pdf
IRF7331TRPBF
Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 20V 7A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 7A
Input Capacitance (Ciss) (Max) @ Vds: 1340pF @ 16V
Rds On (Max) @ Id, Vgs: 30mOhm @ 7A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: 8-SO
Produkt ist nicht verfügbar
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CY14B108N-BA25XI Infineon-CY14B108L_CY14B108N_8-Mbit_(1024_K_8_512_K_16)_nvSRAM-DataSheet-v17_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebf410c3369&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY14B108N-BA25XI
Hersteller: Infineon Technologies
Description: IC NVSRAM 8MBIT PARALLEL 48FBGA
Packaging: Tray
Package / Case: 48-TFBGA
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 48-FBGA (6x10)
Write Cycle Time - Word, Page: 25ns
Memory Interface: Parallel
Access Time: 25 ns
Memory Organization: 512K x 16
DigiKey Programmable: Not Verified
auf Bestellung 282 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+124.31 EUR
10+114.68 EUR
25+110.91 EUR
50+108.11 EUR
100+105.36 EUR
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IRS26302DJTRPBF irs26302dpbf.pdf?fileId=5546d462533600a40153567b681d2845
IRS26302DJTRPBF
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 44PLCC
Packaging: Tape & Reel (TR)
Package / Case: 44-LCC (J-Lead), 32 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 44-PLCC, 32 Leads (16.58x16.58)
Rise / Fall Time (Typ): 125ns, 50ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 200mA, 350mA
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IRS26302DJTRPBF irs26302dpbf.pdf?fileId=5546d462533600a40153567b681d2845
IRS26302DJTRPBF
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 44PLCC
Packaging: Cut Tape (CT)
Package / Case: 44-LCC (J-Lead), 32 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 44-PLCC, 32 Leads (16.58x16.58)
Rise / Fall Time (Typ): 125ns, 50ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 200mA, 350mA
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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EVALCOOLSIC2KVHCCTOBO1 Infineon-IMYH200R024M1H-DataSheet-v01_10-EN.pdf?fileId=8ac78c8c85c5e5aa0185c6eed3db1114
EVALCOOLSIC2KVHCCTOBO1
Hersteller: Infineon Technologies
Description: EVAL BOARD FOR 1ED3124MU12H1200
Packaging: Bulk
Function: MOSFET
Type: Power Management
Utilized IC / Part: 1ED3124MU12H1200
Supplied Contents: Board(s)
Primary Attributes: Isolated
Embedded: Yes, MCU
Contents: Board(s)
Secondary Attributes: On-Board LEDs
auf Bestellung 4 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+996.72 EUR
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AN2131-DK001 AN2131SC,QC,AN2135SC,36SC.pdf
AN2131-DK001
Hersteller: Infineon Technologies
Description: KIT EZ-USB DEVELOPMENT BOARD
Function: USB
Type: Interface
Supplied Contents: Board(s)
Produkt ist nicht verfügbar
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IRLML6401GTRPBF irlml6401gpbf.pdf?fileId=5546d462533600a401535668b04c2632
IRLML6401GTRPBF
Hersteller: Infineon Technologies
Description: MOSFET P-CH 12V 4.3A SOT-23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 4.3A, 4.5V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: Micro3™/SOT-23
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 830 pF @ 10 V
Produkt ist nicht verfügbar
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IRLML6401GTRPBF irlml6401gpbf.pdf?fileId=5546d462533600a401535668b04c2632
IRLML6401GTRPBF
Hersteller: Infineon Technologies
Description: MOSFET P-CH 12V 4.3A SOT-23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 4.3A, 4.5V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: Micro3™/SOT-23
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 830 pF @ 10 V
Produkt ist nicht verfügbar
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IRLML2402GTRPBF irlml2402gpbf.pdf?fileId=5546d462533600a401535664ddb925f8
IRLML2402GTRPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 20V 1.2A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta)
Rds On (Max) @ Id, Vgs: 250mOhm @ 930mA, 4.5V
Power Dissipation (Max): 540mW (Ta)
Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
Supplier Device Package: Micro3™/SOT-23
Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 3.9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 15 V
Produkt ist nicht verfügbar
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IRLML2402GTRPBF irlml2402gpbf.pdf?fileId=5546d462533600a401535664ddb925f8
IRLML2402GTRPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 20V 1.2A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta)
Rds On (Max) @ Id, Vgs: 250mOhm @ 930mA, 4.5V
Power Dissipation (Max): 540mW (Ta)
Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
Supplier Device Package: Micro3™/SOT-23
Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 3.9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 15 V
Produkt ist nicht verfügbar
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IRLML6302GTRPBF irlml6302gpbf.pdf?fileId=5546d462533600a40153566883212625
IRLML6302GTRPBF
Hersteller: Infineon Technologies
Description: MOSFET P-CH 20V 780MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 780mA (Ta)
Rds On (Max) @ Id, Vgs: 600mOhm @ 610mA, 4.5V
Power Dissipation (Max): 540mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: Micro3™/SOT-23
Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 3.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 97 pF @ 15 V
Produkt ist nicht verfügbar
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IRLML6302GTRPBF irlml6302gpbf.pdf?fileId=5546d462533600a40153566883212625
IRLML6302GTRPBF
Hersteller: Infineon Technologies
Description: MOSFET P-CH 20V 780MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 780mA (Ta)
Rds On (Max) @ Id, Vgs: 600mOhm @ 610mA, 4.5V
Power Dissipation (Max): 540mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: Micro3™/SOT-23
Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 3.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 97 pF @ 15 V
Produkt ist nicht verfügbar
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IRG4PSH71UDPBF description irg4psh71udpbf.pdf?fileId=5546d462533600a401535648c1bb233d
IRG4PSH71UDPBF
Hersteller: Infineon Technologies
Description: IGBT 1200V 99A SUPER247
Packaging: Tube
Package / Case: TO-274AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 110 ns
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 70A
Supplier Device Package: SUPER-247™ (TO-274AA)
Td (on/off) @ 25°C: 46ns/250ns
Switching Energy: 8.8mJ (on), 9.4mJ (off)
Test Condition: 960V, 70A, 5Ohm, 15V
Gate Charge: 380 nC
Current - Collector (Ic) (Max): 99 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 350 W
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2EDN7533GXTMA1
2EDN7533GXTMA1
Hersteller: Infineon Technologies
Description: IC GATE DRVR LOW-SIDE 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-WDFN Exposed Pad
Supplier Device Package: PG-WSON-8-1
Driven Configuration: Low-Side
DigiKey Programmable: Not Verified
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2EDN8523GXTMA1 Infineon-2EDN752x-2EDN852x-DS--DS-v02_03-EN.pdf?fileId=5546d462525dbac40152abcc7dbb1727
2EDN8523GXTMA1
Hersteller: Infineon Technologies
Description: IC GATE DRVR LOW-SIDE 8WSON
Packaging: Cut Tape (CT)
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 20V
Input Type: Inverting
Supplier Device Package: PG-WSON-8-1
Rise / Fall Time (Typ): 5.3ns, 4.5ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 1.1V, 1.98V
Current - Peak Output (Source, Sink): 5A, 5A
DigiKey Programmable: Not Verified
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