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PEB2026TPV1.1 PEB2026TPV1.1 Infineon Technologies Description: ISDN POWER CONTROLLER
Packaging: Bulk
auf Bestellung 217 Stücke:
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57+8.63 EUR
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PEB2070NV2.4GICC PEB2070NV2.4GICC Infineon Technologies SIEMS02119-1.pdf?t.download=true&u=5oefqw Description: ISDN COMMUNICATIONS CONTROLLER
Packaging: Bulk
Package / Case: 28-LCC (J-Lead)
Mounting Type: Surface Mount
Function: ISDN
Interface: ISDN, Serial
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4.75V ~ 5.25V
Current - Supply: 8mA
Supplier Device Package: PG-LCC-28-R
Number of Circuits: 1
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PEB2070NV2.4 PEB2070NV2.4 Infineon Technologies SIEMS02119-1.pdf?t.download=true&u=5oefqw Description: ISDN COMMUNICATIONS CONTROLLER
Packaging: Bulk
Package / Case: 28-LCC (J-Lead)
Mounting Type: Surface Mount
Function: ISDN
Interface: ISDN, Serial
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4.75V ~ 5.25V
Current - Supply: 8mA
Supplier Device Package: PG-LCC-28-R
Number of Circuits: 1
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PEB2026T-SV1.1 PEB2026T-SV1.1 Infineon Technologies Description: ISDN POWER CONTROLLER
Packaging: Tube
auf Bestellung 9741 Stücke:
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CY90387SPMT-GS-373E1 CY90387SPMT-GS-373E1 Infineon Technologies download Description: IC MCU 16BIT 64KB MROM 48LQFP
Packaging: Tray
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External
Program Memory Type: Mask ROM
Core Processor: F²MC-16LX
Data Converters: A/D 8x8/10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3.5V ~ 5.5V
Connectivity: CANbus, SCI, UART/USART
Peripherals: POR, WDT
Supplier Device Package: 48-LQFP (7x7)
Number of I/O: 36
DigiKey Programmable: Not Verified
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PVT212PBF PVT212PBF Infineon Technologies pvt212.pdf?fileId=5546d462533600a4015356841646295d Description: SSR RELAY SPST-NO 550MA 0-150V
Packaging: Tube
Package / Case: 6-DIP (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Through Hole
Voltage - Input: 1.2VDC
Circuit: SPST-NO (1 Form A)
Termination Style: PC Pin
Load Current: 550 mA
Supplier Device Package: 6-DIP
Voltage - Load: 0 V ~ 150 V
On-State Resistance (Max): 750 mOhms
Operating Temperature: -40°C ~ 85°C
Approval Agency: UL
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10+30.18 EUR
25+28.82 EUR
50+27.83 EUR
100+26.87 EUR
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BGS18MA14E6327XTSA1 BGS18MA14E6327XTSA1 Infineon Technologies Infineon-BGS18MA14-DS-v02_04-EN.pdf?fileId=5546d46265e7dffd0165ed72330e6921 Description: IC RF SWITCH SP8T 3.8GHZ ATSLP14
Packaging: Bulk
Package / Case: 14-UFQFN Exposed Pad
Impedance: 50Ohm
Mounting Type: Surface Mount
Circuit: SP8T
RF Type: LTE, W-CDMA
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 3.4V
Insertion Loss: 0.7dB
Frequency Range: 100MHz ~ 3.8GHz
Test Frequency: 3.6GHz ~ 3.8GHz
Isolation: 29dB
Supplier Device Package: PG-ATSLP-14-10
IIP3: 65dBm
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IRS20955STRPBF IRS20955STRPBF Infineon Technologies IRS20955%28S%29PbF.pdf Description: IC LINE DRIVER 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Function: Line Driver
Interface: Analog
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 18V
Applications: Audio Systems
Supplier Device Package: 16-SOIC
Number of Channels: 2
Produkt ist nicht verfügbar
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8611200977 Infineon Technologies Description: INFINEON
Packaging: Bulk
Produkt ist nicht verfügbar
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IRG4BC20KD-SPBF IRG4BC20KD-SPBF Infineon Technologies irg4bc20kd-spbf.pdf?fileId=5546d462533600a40153563f39562255 Description: IGBT 600V 16A 60W D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 37 ns
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 9A
Supplier Device Package: D2PAK
Td (on/off) @ 25°C: 54ns/180ns
Switching Energy: 340µJ (on), 300µJ (off)
Test Condition: 480V, 9A, 50Ohm, 15V
Gate Charge: 34 nC
Current - Collector (Ic) (Max): 16 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 32 A
Power - Max: 60 W
Produkt ist nicht verfügbar
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CY7C60323-PVXC CY7C60323-PVXC Infineon Technologies CY7C603xx.pdf Description: IC MCU 8BIT 8KB FLASH 28SSOP
Packaging: Tube
Package / Case: 28-SSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Speed: 12MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 512 x 8
Operating Temperature: 0°C ~ 70°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Data Converters: A/D 8x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 3.6V
Connectivity: I2C, SPI
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 28-SSOP
Number of I/O: 24
DigiKey Programmable: Not Verified
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10+4.22 EUR
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141+3.41 EUR
282+3.28 EUR
517+3.19 EUR
1034+3.1 EUR
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CY7C63823-SXC CY7C63823-SXC Infineon Technologies download Description: IC USB PERIPHERAL CTRLR 24-SOIC
Packaging: Bulk
Package / Case: 24-SOIC (0.295", 7.50mm Width)
Function: Controller
Interface: GPIO, SPI
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4V ~ 5.5V
Current - Supply: 40mA
Protocol: USB
Standards: USB 2.0
Supplier Device Package: 24-SOIC
DigiKey Programmable: Not Verified
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FP06R12W1T4B3BOMA1 FP06R12W1T4B3BOMA1 Infineon Technologies Infineon-FP06R12W1T4_B3-DS-v02_03-en_de.pdf?fileId=db3a30433ba77ced013bada6fc1e33b3 Description: IGBT MODULE 1200V 0 94W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 6A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 94 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 600 pF @ 25 V
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IRG4PSC71UDPBF IRG4PSC71UDPBF Infineon Technologies irg4psc71udpbf.pdf?fileId=5546d462533600a40153564894572331 Description: IGBT 600V 85A 350W SUPER247
Packaging: Tube
Package / Case: TO-274AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 82 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 60A
Supplier Device Package: SUPER-247™ (TO-274AA)
Td (on/off) @ 25°C: 90ns/245ns
Switching Energy: 3.26mJ (on), 2.27mJ (off)
Test Condition: 480V, 60A, 5Ohm, 15V
Gate Charge: 340 nC
Current - Collector (Ic) (Max): 85 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 350 W
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IRGS4062DPBF IRGS4062DPBF Infineon Technologies IRGS%28SL%294062DPbF.pdf Description: IGBT TRENCH 600V 48A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 89 ns
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 24A
Supplier Device Package: D2PAK
IGBT Type: Trench
Td (on/off) @ 25°C: 41ns/104ns
Switching Energy: 115µJ (on), 600µJ (off)
Test Condition: 400V, 24A, 10Ohm, 15V
Gate Charge: 50 nC
Current - Collector (Ic) (Max): 48 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 96 A
Power - Max: 250 W
Produkt ist nicht verfügbar
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F435MR07W1D7S8B11ABPSA1 F435MR07W1D7S8B11ABPSA1 Infineon Technologies F4-35MR07W1D7S8_B11_A_Rev1.10_8-22-23.pdf Description: MOSFET 4N-CH 650V 35A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650V
Current - Continuous Drain (Id) @ 25°C: 35A
Input Capacitance (Ciss) (Max) @ Vds: 6950pF @ 400V
Rds On (Max) @ Id, Vgs: 39.4mOhm @ 35A, 10V
Gate Charge (Qg) (Max) @ Vgs: 141nC @ 10V
Vgs(th) (Max) @ Id: 4.45V @ 1.74mA
Supplier Device Package: Module
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IRS2113PBF IRS2113PBF Infineon Technologies irs2110.pdf?fileId=5546d462533600a40153567660ff27b0 Description: IC GATE DRVR HALF-BRIDGE 14DIP
Packaging: Tube
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 14-DIP
Rise / Fall Time (Typ): 25ns, 17ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 6V, 9.5V
Current - Peak Output (Source, Sink): 2.5A, 2.5A
DigiKey Programmable: Not Verified
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XMC1302T028X0200ABXUMA1 XMC1302T028X0200ABXUMA1 Infineon Technologies Infineon-xmc1300_AB-DS-v02_00-EN.pdf?fileId=5546d4624a0bf290014a4bdb073c25c6 Description: IC MCU 32BIT 200KB FLASH 28TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 28-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 200KB (200K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 14x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, IrDA, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-TSSOP-28-16
Number of I/O: 26
DigiKey Programmable: Not Verified
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3000+2.73 EUR
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XMC1302T028X0200ABXUMA1 XMC1302T028X0200ABXUMA1 Infineon Technologies Infineon-xmc1300_AB-DS-v02_00-EN.pdf?fileId=5546d4624a0bf290014a4bdb073c25c6 Description: IC MCU 32BIT 200KB FLASH 28TSSOP
Packaging: Cut Tape (CT)
Package / Case: 28-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 200KB (200K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 14x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, IrDA, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-TSSOP-28-16
Number of I/O: 26
DigiKey Programmable: Not Verified
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1000+3.08 EUR
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XMC1302T028X0064ABXUMA1 XMC1302T028X0064ABXUMA1 Infineon Technologies Infineon-xmc1300_AB-DS-v02_00-EN.pdf?fileId=5546d4624a0bf290014a4bdb073c25c6 Description: IC MCU 32BIT 64KB FLASH 28TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 28-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 14x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, IrDA, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-TSSOP-28-16
Number of I/O: 26
DigiKey Programmable: Not Verified
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XMC1302T028X0064ABXUMA1 XMC1302T028X0064ABXUMA1 Infineon Technologies Infineon-xmc1300_AB-DS-v02_00-EN.pdf?fileId=5546d4624a0bf290014a4bdb073c25c6 Description: IC MCU 32BIT 64KB FLASH 28TSSOP
Packaging: Cut Tape (CT)
Package / Case: 28-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 14x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, IrDA, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-TSSOP-28-16
Number of I/O: 26
DigiKey Programmable: Not Verified
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250+2.56 EUR
500+2.47 EUR
1000+2.4 EUR
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IRFB23N15DPBF IRFB23N15DPBF Infineon Technologies irfs23n15dpbf.pdf?fileId=5546d462533600a4015356361eff2140 Description: MOSFET N-CH 150V 23A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 14A, 10V
Power Dissipation (Max): 3.8W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
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IRFS23N15DTRLP IRFS23N15DTRLP Infineon Technologies irfs23n15dpbf.pdf?fileId=5546d462533600a4015356361eff2140 Description: MOSFET N-CH 150V 23A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 14A, 10V
Power Dissipation (Max): 3.8W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
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IRFS23N15DTRLP IRFS23N15DTRLP Infineon Technologies irfs23n15dpbf.pdf?fileId=5546d462533600a4015356361eff2140 Description: MOSFET N-CH 150V 23A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 14A, 10V
Power Dissipation (Max): 3.8W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
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2EDN7523GXTMA1 2EDN7523GXTMA1 Infineon Technologies Infineon-2EDN752x-2EDN852x-DS--DS-v02_03-EN.pdf?fileId=5546d462525dbac40152abcc7dbb1727 Description: IC GATE DRVR LOW-SIDE 8WSON
Packaging: Tape & Reel (TR)
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 20V
Input Type: Inverting
Supplier Device Package: PG-WSON-8-1
Rise / Fall Time (Typ): 5.3ns, 4.5ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Current - Peak Output (Source, Sink): 5A, 5A
DigiKey Programmable: Not Verified
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2EDN7523GXTMA1 2EDN7523GXTMA1 Infineon Technologies Infineon-2EDN752x-2EDN852x-DS--DS-v02_03-EN.pdf?fileId=5546d462525dbac40152abcc7dbb1727 Description: IC GATE DRVR LOW-SIDE 8WSON
Packaging: Cut Tape (CT)
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 20V
Input Type: Inverting
Supplier Device Package: PG-WSON-8-1
Rise / Fall Time (Typ): 5.3ns, 4.5ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Current - Peak Output (Source, Sink): 5A, 5A
DigiKey Programmable: Not Verified
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2EDN8524GXTMA1 2EDN8524GXTMA1 Infineon Technologies Infineon-2EDN752x-2EDN852x-DS--DS-v02_03-EN.pdf?fileId=5546d462525dbac40152abcc7dbb1727 Description: IC GATE DRVR LOW-SIDE 8WSON
Packaging: Tape & Reel (TR)
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 20V
Input Type: Non-Inverting
Supplier Device Package: PG-WSON-8-1
Rise / Fall Time (Typ): 5.3ns, 4.5ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 1.1V, 1.98V
Current - Peak Output (Source, Sink): 5A, 5A
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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2EDN8524GXTMA1 2EDN8524GXTMA1 Infineon Technologies Infineon-2EDN752x-2EDN852x-DS--DS-v02_03-EN.pdf?fileId=5546d462525dbac40152abcc7dbb1727 Description: IC GATE DRVR LOW-SIDE 8WSON
Packaging: Cut Tape (CT)
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 20V
Input Type: Non-Inverting
Supplier Device Package: PG-WSON-8-1
Rise / Fall Time (Typ): 5.3ns, 4.5ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 1.1V, 1.98V
Current - Peak Output (Source, Sink): 5A, 5A
DigiKey Programmable: Not Verified
auf Bestellung 3380 Stücke:
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12+1.48 EUR
17+1.06 EUR
25+0.96 EUR
100+0.84 EUR
250+0.79 EUR
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EVAL2500WPFCGANATOBO1 EVAL2500WPFCGANATOBO1 Infineon Technologies Infineon-2EDN752x-2EDN852x-DS--DS-v02_05-EN.pdf?fileId=5546d462525dbac40152abcc7dbb1727 Description: 2500W FULL BRIDGE TOTEM
Packaging: Bulk
Function: Gate Driver
Type: Power Management
Utilized IC / Part: 2EDN7524R
Supplied Contents: Board(s)
Primary Attributes: 2-Channel (Dual)
Contents: Board(s)
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2EDN7434BXTSA1 Infineon Technologies Description: DRIVER IC PG-SOT23-6
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
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2EDN7434BXTSA1 Infineon Technologies Description: DRIVER IC PG-SOT23-6
Packaging: Cut Tape (CT)
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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AUIRFB3806 AUIRFB3806 Infineon Technologies AUIRFB3806_Web.pdf Description: MOSFET N-CH 60V 43A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
Rds On (Max) @ Id, Vgs: 15.8mOhm @ 25A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 4V @ 50µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 50 V
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IRFB42N20DPBF IRFB42N20DPBF Infineon Technologies irfb42n20dpbf.pdf?fileId=5546d462533600a40153561606c81e27 Description: MOSFET N-CH 200V 44A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 26A, 10V
Power Dissipation (Max): 2.4W (Ta), 330W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3430 pF @ 25 V
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IRFB23N20DPBF IRFB23N20DPBF Infineon Technologies irfs23n20dpbf.pdf?fileId=5546d462533600a40153563628372143 Description: MOSFET N-CH 200V 24A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 14A, 10V
Power Dissipation (Max): 3.8W (Ta), 170W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1960 pF @ 25 V
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BSM100GB60DLCHOSA1 BSM100GB60DLCHOSA1 Infineon Technologies Infineon-BSM100GB60DLC-DS-v01_00-en_de.pdf?fileId=db3a304412b407950112b4349b3960c4 Description: IGBT MOD 600V 130A 445W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: Module
Current - Collector (Ic) (Max): 130 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 445 W
Current - Collector Cutoff (Max): 500 µA
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BSM100GB60DLCHOSA1 BSM100GB60DLCHOSA1 Infineon Technologies Infineon-BSM100GB60DLC-DS-v01_00-en_de.pdf?fileId=db3a304412b407950112b4349b3960c4 Description: IGBT MOD 600V 130A 445W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: Module
Current - Collector (Ic) (Max): 130 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 445 W
Current - Collector Cutoff (Max): 500 µA
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BSM100GB120DLCHOSA1 Infineon Technologies INFNS11478-1.pdf?t.download=true&u=5oefqw Description: IGBT MOD 1200V 100A 830W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 125°C
NTC Thermistor: Yes
Supplier Device Package: Module
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 830 W
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BSM100GB170DLCHOSA1 Infineon Technologies Description: IGBT MOD 1700V 200A 960W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: Module
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 960 W
Current - Collector Cutoff (Max): 200 µA
Input Capacitance (Cies) @ Vce: 7 nF @ 25 V
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D1721NH90TAOSA1 D1721NH90TAOSA1 Infineon Technologies Infineon-D1721NH90T-DS-v04_00-DE.pdf?fileId=5546d46255dd933d0155fd86888d3ac4 Description: DIODE GEN PURP 2160A D10026K-1
Packaging: Tray
Package / Case: DO-200, Variant
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 2160A
Supplier Device Package: BG-D10026K-1
Operating Temperature - Junction: 0°C ~ 140°C
Current - Reverse Leakage @ Vr: 150 mA @ 9000 V
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DD340N18SHPSA1 DD340N18SHPSA1 Infineon Technologies DD340N18S.pdf Description: DIODE MOD GP 1800V 330A BGPB50SB
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 330A
Supplier Device Package: BG-PB50SB-1
Operating Temperature - Junction: -40°C ~ 135°C
Voltage - DC Reverse (Vr) (Max): 1800 V
Current - Reverse Leakage @ Vr: 1 mA @ 1800 V
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IRG4BC30WPBF IRG4BC30WPBF Infineon Technologies irg4bc30wpbf.pdf?fileId=5546d462533600a40153564014f2228d description Description: IGBT 600V 23A TO-220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 12A
Supplier Device Package: TO-220AB
Td (on/off) @ 25°C: 25ns/99ns
Switching Energy: 130µJ (on), 130µJ (off)
Test Condition: 480V, 12A, 23Ohm, 15V
Gate Charge: 51 nC
Current - Collector (Ic) (Max): 23 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 92 A
Power - Max: 100 W
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IAUC120N06S5L011ATMA1 IAUC120N06S5L011ATMA1 Infineon Technologies Infineon-IAUC120N06S5L011-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7fb5929e017fc1b680d712ef Description: MOSFET_)40V 60V)
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 310A (Tj)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 60A, 10V
Power Dissipation (Max): 188W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 130µA
Supplier Device Package: PG-TDSON-8-53
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11400 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2738 Stücke:
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100+2.54 EUR
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IAUC120N06S5N032ATMA1 IAUC120N06S5N032ATMA1 Infineon Technologies Infineon-IAUC120N06S5N032-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8386267f0183a8692a6a2df6 Description: MOSFET_)40V 60V)
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tj)
Rds On (Max) @ Id, Vgs: 3.23mOhm @ 60A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 44µA
Supplier Device Package: PG-TDSON-8-34
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3446 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101
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IAUC120N06S5L022ATMA1 IAUC120N06S5L022ATMA1 Infineon Technologies Infineon-IAUC120N06S5L022-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8386267f0183b275d5cd0ef1 Description: MOSFET_)40V 60V)
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170A (Tj)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 60A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 65µA
Supplier Device Package: PG-TDSON-8-34
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5651 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 4627 Stücke:
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500+1.25 EUR
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S25FL128SAGNFI011 S25FL128SAGNFI011 Infineon Technologies Infineon-S25FL128S_S25FL256S_128_Mb_(16_MB)_256_Mb_(32_MB)_3.0V_SPI_Flash_Memory-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecfb6a64a17 Description: IC FLASH 128MBIT SPI/QUAD 8WSON
Packaging: Tube
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 8-WSON (6x8)
Memory Interface: SPI - Quad I/O
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
auf Bestellung 991 Stücke:
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25+4.61 EUR
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164+4.33 EUR
328+4.22 EUR
574+4.14 EUR
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S25FL128SAGNFM000 S25FL128SAGNFM000 Infineon Technologies Infineon-S25FL128S_S25FL256S_128_Mb_(16_MB)_256_Mb_(32_MB)_3.0V_SPI_Flash_Memory-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecfb6a64a17 Description: IC FLASH 128MBIT SPI/QUAD 8WSON
Packaging: Tray
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 8-WSON (6x8)
Memory Interface: SPI - Quad I/O
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 523 Stücke:
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50+5.8 EUR
100+5.66 EUR
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AUIRF7343QTR AUIRF7343QTR Infineon Technologies auirf7343q.pdf?fileId=5546d462533600a4015355ad45c613e0 Description: MOSFET N/P-CH 55V 4.7A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 4.7A, 3.4A
Input Capacitance (Ciss) (Max) @ Vds: 740pF @ 25V
Rds On (Max) @ Id, Vgs: 50mOhm @ 4.7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SOIC
Produkt ist nicht verfügbar
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AUIRF7343QTR AUIRF7343QTR Infineon Technologies auirf7343q.pdf?fileId=5546d462533600a4015355ad45c613e0 Description: MOSFET N/P-CH 55V 4.7A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 4.7A, 3.4A
Input Capacitance (Ciss) (Max) @ Vds: 740pF @ 25V
Rds On (Max) @ Id, Vgs: 50mOhm @ 4.7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SOIC
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IPD60R600E6ATMA1 IPD60R600E6ATMA1 Infineon Technologies Infineon-IPD60R600E6-DS-v02_02-EN.pdf?fileId=db3a30433f1b26e8013f1f009327039e Description: MOSFET N-CH 600V 7.3A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 2.4A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 200µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 20.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 100 V
Produkt ist nicht verfügbar
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IRG4BC30KD-SPBF IRG4BC30KD-SPBF Infineon Technologies irg4bc30kd-spbf.pdf?fileId=5546d462533600a40153563fcdc8227b description Description: IGBT 600V 28A 100W D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 42 ns
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 16A
Supplier Device Package: D2PAK
Td (on/off) @ 25°C: 60ns/160ns
Switching Energy: 600µJ (on), 580µJ (off)
Test Condition: 480V, 16A, 23Ohm, 15V
Gate Charge: 67 nC
Current - Collector (Ic) (Max): 28 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 56 A
Power - Max: 100 W
Produkt ist nicht verfügbar
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IRG4BC30FDPBF IRG4BC30FDPBF Infineon Technologies irg4bc30fdpbf.pdf?fileId=5546d462533600a40153563fa7ab2271 description Description: IGBT 600V 31A TO-220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 42 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 17A
Supplier Device Package: TO-220AB
Td (on/off) @ 25°C: 42ns/230ns
Switching Energy: 630µJ (on), 1.39mJ (off)
Test Condition: 480V, 17A, 23Ohm, 15V
Gate Charge: 51 nC
Current - Collector (Ic) (Max): 31 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 124 A
Power - Max: 100 W
Produkt ist nicht verfügbar
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IRG4BC30F-SPBF IRG4BC30F-SPBF Infineon Technologies IRG4BC30F.pdf Description: IGBT 600V 31A 100W D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 17A
Supplier Device Package: D2PAK
Td (on/off) @ 25°C: 21ns/200ns
Switching Energy: 230µJ (on), 1.18mJ (off)
Test Condition: 480V, 17A, 23Ohm, 15V
Gate Charge: 51 nC
Current - Collector (Ic) (Max): 31 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 100 W
Produkt ist nicht verfügbar
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IRG4BC30FD-SPBF IRG4BC30FD-SPBF Infineon Technologies irg4bc30fd-spbf.pdf?fileId=5546d462533600a40153563fafdd2273 Description: IGBT 600V 31A 100W D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 42 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 17A
Supplier Device Package: D2PAK
Td (on/off) @ 25°C: 42ns/230ns
Switching Energy: 630µJ (on), 1.39mJ (off)
Test Condition: 480V, 17A, 23Ohm, 15V
Gate Charge: 51 nC
Current - Collector (Ic) (Max): 31 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 124 A
Power - Max: 100 W
Produkt ist nicht verfügbar
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IRG4PC40KPBF IRG4PC40KPBF Infineon Technologies fundamentals-of-power-semiconductors Description: IGBT 600V 42A TO-247AC
Packaging: Bag
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 25A
Supplier Device Package: TO-247AC
Td (on/off) @ 25°C: 30ns/140ns
Switching Energy: 620µJ (on), 330µJ (off)
Test Condition: 480V, 25A, 10Ohm, 15V
Gate Charge: 120 nC
Current - Collector (Ic) (Max): 42 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 84 A
Power - Max: 160 W
Produkt ist nicht verfügbar
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IRG4PC40FDPBF IRG4PC40FDPBF Infineon Technologies irg4pc40fdpbf.pdf?fileId=5546d462533600a40153564401d422d2 Description: IGBT 600V 49A TO-247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 42 ns
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 27A
Supplier Device Package: TO-247AC
Td (on/off) @ 25°C: 63ns/230ns
Switching Energy: 950µJ (on), 2.01mJ (off)
Test Condition: 480V, 27A, 10Ohm, 15V
Gate Charge: 100 nC
Current - Collector (Ic) (Max): 49 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 196 A
Power - Max: 160 W
Produkt ist nicht verfügbar
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T920N06TOFXPSA1 T920N06TOFXPSA1 Infineon Technologies Infineon-T920N-DS-v03_01-en_de.pdf?fileId=db3a3043284aacd80128634e0db252f7 Description: SCR MODULE 600V 1500A DO200AA
Packaging: Tray
Package / Case: DO-200AA, A-PUK
Mounting Type: Clamp On
Operating Temperature: -40°C ~ 140°C
Structure: Single
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 200 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 13500A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 925 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (RMS)) (Max): 1500 A
Voltage - Off State: 600 V
Produkt ist nicht verfügbar
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S29GL512S10FHI010 S29GL512S10FHI010 Infineon Technologies Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai Description: IC FLASH 512MBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (11x13)
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 32M x 16
DigiKey Programmable: Verified
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IPP018N10N5AKSA1 IPP018N10N5AKSA1 Infineon Technologies Infineon-IPP018N10N5-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c85c5e5aa0185e4544cf66df7 Description: TRENCH >=100V
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Ta), 205A (Tc)
Rds On (Max) @ Id, Vgs: 1.83mOhm @ 100A, 10V
Power Dissipation (Max): 3.8W (Ta), 375W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 270µA
Supplier Device Package: PG-TO220-3
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16000 pF @ 50 V
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IPP018N10N5XKSA1 IPP018N10N5XKSA1 Infineon Technologies Infineon-IPP018N10N5-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c85c5e5aa0185e4544cf66df7 Description: TRENCH >=100V
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 205A (Tc)
Rds On (Max) @ Id, Vgs: 1.83mOhm @ 100A, 10V
Power Dissipation (Max): 3.8W (Ta), 375W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 270µA
Supplier Device Package: PG-TO220-3
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16000 pF @ 50 V
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IPB018N10N5ATMA1 IPB018N10N5ATMA1 Infineon Technologies Infineon-IPB018N10N5-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c85c5e5aa0185e4420f246df4 Description: TRENCH >=100V
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Ta), 176A (Tc)
Rds On (Max) @ Id, Vgs: 1.83mOhm @ 100A, 10V
Power Dissipation (Max): 3.8W (Ta), 375W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 270µA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16000 pF @ 50 V
Produkt ist nicht verfügbar
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PEB2026TPV1.1
PEB2026TPV1.1
Hersteller: Infineon Technologies
Description: ISDN POWER CONTROLLER
Packaging: Bulk
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PEB2070NV2.4GICC SIEMS02119-1.pdf?t.download=true&u=5oefqw
PEB2070NV2.4GICC
Hersteller: Infineon Technologies
Description: ISDN COMMUNICATIONS CONTROLLER
Packaging: Bulk
Package / Case: 28-LCC (J-Lead)
Mounting Type: Surface Mount
Function: ISDN
Interface: ISDN, Serial
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4.75V ~ 5.25V
Current - Supply: 8mA
Supplier Device Package: PG-LCC-28-R
Number of Circuits: 1
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47+10.87 EUR
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PEB2070NV2.4 SIEMS02119-1.pdf?t.download=true&u=5oefqw
PEB2070NV2.4
Hersteller: Infineon Technologies
Description: ISDN COMMUNICATIONS CONTROLLER
Packaging: Bulk
Package / Case: 28-LCC (J-Lead)
Mounting Type: Surface Mount
Function: ISDN
Interface: ISDN, Serial
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4.75V ~ 5.25V
Current - Supply: 8mA
Supplier Device Package: PG-LCC-28-R
Number of Circuits: 1
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47+10.87 EUR
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PEB2026T-SV1.1
PEB2026T-SV1.1
Hersteller: Infineon Technologies
Description: ISDN POWER CONTROLLER
Packaging: Tube
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40+12.62 EUR
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CY90387SPMT-GS-373E1 download
CY90387SPMT-GS-373E1
Hersteller: Infineon Technologies
Description: IC MCU 16BIT 64KB MROM 48LQFP
Packaging: Tray
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External
Program Memory Type: Mask ROM
Core Processor: F²MC-16LX
Data Converters: A/D 8x8/10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3.5V ~ 5.5V
Connectivity: CANbus, SCI, UART/USART
Peripherals: POR, WDT
Supplier Device Package: 48-LQFP (7x7)
Number of I/O: 36
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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PVT212PBF pvt212.pdf?fileId=5546d462533600a4015356841646295d
PVT212PBF
Hersteller: Infineon Technologies
Description: SSR RELAY SPST-NO 550MA 0-150V
Packaging: Tube
Package / Case: 6-DIP (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Through Hole
Voltage - Input: 1.2VDC
Circuit: SPST-NO (1 Form A)
Termination Style: PC Pin
Load Current: 550 mA
Supplier Device Package: 6-DIP
Voltage - Load: 0 V ~ 150 V
On-State Resistance (Max): 750 mOhms
Operating Temperature: -40°C ~ 85°C
Approval Agency: UL
auf Bestellung 334 Stücke:
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1+33.88 EUR
10+30.18 EUR
25+28.82 EUR
50+27.83 EUR
100+26.87 EUR
250+25.66 EUR
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BGS18MA14E6327XTSA1 Infineon-BGS18MA14-DS-v02_04-EN.pdf?fileId=5546d46265e7dffd0165ed72330e6921
BGS18MA14E6327XTSA1
Hersteller: Infineon Technologies
Description: IC RF SWITCH SP8T 3.8GHZ ATSLP14
Packaging: Bulk
Package / Case: 14-UFQFN Exposed Pad
Impedance: 50Ohm
Mounting Type: Surface Mount
Circuit: SP8T
RF Type: LTE, W-CDMA
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 3.4V
Insertion Loss: 0.7dB
Frequency Range: 100MHz ~ 3.8GHz
Test Frequency: 3.6GHz ~ 3.8GHz
Isolation: 29dB
Supplier Device Package: PG-ATSLP-14-10
IIP3: 65dBm
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664+0.73 EUR
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IRS20955STRPBF IRS20955%28S%29PbF.pdf
IRS20955STRPBF
Hersteller: Infineon Technologies
Description: IC LINE DRIVER 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Function: Line Driver
Interface: Analog
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 18V
Applications: Audio Systems
Supplier Device Package: 16-SOIC
Number of Channels: 2
Produkt ist nicht verfügbar
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8611200977
Hersteller: Infineon Technologies
Description: INFINEON
Packaging: Bulk
Produkt ist nicht verfügbar
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IRG4BC20KD-SPBF irg4bc20kd-spbf.pdf?fileId=5546d462533600a40153563f39562255
IRG4BC20KD-SPBF
Hersteller: Infineon Technologies
Description: IGBT 600V 16A 60W D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 37 ns
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 9A
Supplier Device Package: D2PAK
Td (on/off) @ 25°C: 54ns/180ns
Switching Energy: 340µJ (on), 300µJ (off)
Test Condition: 480V, 9A, 50Ohm, 15V
Gate Charge: 34 nC
Current - Collector (Ic) (Max): 16 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 32 A
Power - Max: 60 W
Produkt ist nicht verfügbar
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CY7C60323-PVXC CY7C603xx.pdf
CY7C60323-PVXC
Hersteller: Infineon Technologies
Description: IC MCU 8BIT 8KB FLASH 28SSOP
Packaging: Tube
Package / Case: 28-SSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Speed: 12MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 512 x 8
Operating Temperature: 0°C ~ 70°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Data Converters: A/D 8x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 3.6V
Connectivity: I2C, SPI
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 28-SSOP
Number of I/O: 24
DigiKey Programmable: Not Verified
auf Bestellung 1473 Stücke:
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4+5.61 EUR
10+4.22 EUR
47+3.68 EUR
141+3.41 EUR
282+3.28 EUR
517+3.19 EUR
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CY7C63823-SXC download
CY7C63823-SXC
Hersteller: Infineon Technologies
Description: IC USB PERIPHERAL CTRLR 24-SOIC
Packaging: Bulk
Package / Case: 24-SOIC (0.295", 7.50mm Width)
Function: Controller
Interface: GPIO, SPI
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4V ~ 5.5V
Current - Supply: 40mA
Protocol: USB
Standards: USB 2.0
Supplier Device Package: 24-SOIC
DigiKey Programmable: Not Verified
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82+6.14 EUR
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FP06R12W1T4B3BOMA1 Infineon-FP06R12W1T4_B3-DS-v02_03-en_de.pdf?fileId=db3a30433ba77ced013bada6fc1e33b3
FP06R12W1T4B3BOMA1
Hersteller: Infineon Technologies
Description: IGBT MODULE 1200V 0 94W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 6A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 94 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 600 pF @ 25 V
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1+62.62 EUR
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IRG4PSC71UDPBF irg4psc71udpbf.pdf?fileId=5546d462533600a40153564894572331
IRG4PSC71UDPBF
Hersteller: Infineon Technologies
Description: IGBT 600V 85A 350W SUPER247
Packaging: Tube
Package / Case: TO-274AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 82 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 60A
Supplier Device Package: SUPER-247™ (TO-274AA)
Td (on/off) @ 25°C: 90ns/245ns
Switching Energy: 3.26mJ (on), 2.27mJ (off)
Test Condition: 480V, 60A, 5Ohm, 15V
Gate Charge: 340 nC
Current - Collector (Ic) (Max): 85 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 350 W
Produkt ist nicht verfügbar
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IRGS4062DPBF IRGS%28SL%294062DPbF.pdf
IRGS4062DPBF
Hersteller: Infineon Technologies
Description: IGBT TRENCH 600V 48A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 89 ns
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 24A
Supplier Device Package: D2PAK
IGBT Type: Trench
Td (on/off) @ 25°C: 41ns/104ns
Switching Energy: 115µJ (on), 600µJ (off)
Test Condition: 400V, 24A, 10Ohm, 15V
Gate Charge: 50 nC
Current - Collector (Ic) (Max): 48 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 96 A
Power - Max: 250 W
Produkt ist nicht verfügbar
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F435MR07W1D7S8B11ABPSA1 F4-35MR07W1D7S8_B11_A_Rev1.10_8-22-23.pdf
F435MR07W1D7S8B11ABPSA1
Hersteller: Infineon Technologies
Description: MOSFET 4N-CH 650V 35A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650V
Current - Continuous Drain (Id) @ 25°C: 35A
Input Capacitance (Ciss) (Max) @ Vds: 6950pF @ 400V
Rds On (Max) @ Id, Vgs: 39.4mOhm @ 35A, 10V
Gate Charge (Qg) (Max) @ Vgs: 141nC @ 10V
Vgs(th) (Max) @ Id: 4.45V @ 1.74mA
Supplier Device Package: Module
auf Bestellung 41 Stücke:
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1+96.18 EUR
24+86.31 EUR
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IRS2113PBF irs2110.pdf?fileId=5546d462533600a40153567660ff27b0
IRS2113PBF
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 14DIP
Packaging: Tube
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 14-DIP
Rise / Fall Time (Typ): 25ns, 17ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 6V, 9.5V
Current - Peak Output (Source, Sink): 2.5A, 2.5A
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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XMC1302T028X0200ABXUMA1 Infineon-xmc1300_AB-DS-v02_00-EN.pdf?fileId=5546d4624a0bf290014a4bdb073c25c6
XMC1302T028X0200ABXUMA1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 200KB FLASH 28TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 28-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 200KB (200K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 14x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, IrDA, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-TSSOP-28-16
Number of I/O: 26
DigiKey Programmable: Not Verified
auf Bestellung 3000 Stücke:
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Anzahl Preis
3000+2.73 EUR
Mindestbestellmenge: 3000
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XMC1302T028X0200ABXUMA1 Infineon-xmc1300_AB-DS-v02_00-EN.pdf?fileId=5546d4624a0bf290014a4bdb073c25c6
XMC1302T028X0200ABXUMA1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 200KB FLASH 28TSSOP
Packaging: Cut Tape (CT)
Package / Case: 28-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 200KB (200K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 14x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, IrDA, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-TSSOP-28-16
Number of I/O: 26
DigiKey Programmable: Not Verified
auf Bestellung 3000 Stücke:
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Anzahl Preis
4+5.54 EUR
10+4.17 EUR
25+3.83 EUR
100+3.46 EUR
250+3.28 EUR
500+3.17 EUR
1000+3.08 EUR
Mindestbestellmenge: 4
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XMC1302T028X0064ABXUMA1 Infineon-xmc1300_AB-DS-v02_00-EN.pdf?fileId=5546d4624a0bf290014a4bdb073c25c6
XMC1302T028X0064ABXUMA1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 64KB FLASH 28TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 28-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 14x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, IrDA, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-TSSOP-28-16
Number of I/O: 26
DigiKey Programmable: Not Verified
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+2.11 EUR
Mindestbestellmenge: 3000
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XMC1302T028X0064ABXUMA1 Infineon-xmc1300_AB-DS-v02_00-EN.pdf?fileId=5546d4624a0bf290014a4bdb073c25c6
XMC1302T028X0064ABXUMA1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 64KB FLASH 28TSSOP
Packaging: Cut Tape (CT)
Package / Case: 28-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 14x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, IrDA, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-TSSOP-28-16
Number of I/O: 26
DigiKey Programmable: Not Verified
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.42 EUR
10+3.29 EUR
25+3.01 EUR
100+2.71 EUR
250+2.56 EUR
500+2.47 EUR
1000+2.4 EUR
Mindestbestellmenge: 4
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IRFB23N15DPBF irfs23n15dpbf.pdf?fileId=5546d462533600a4015356361eff2140
IRFB23N15DPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 150V 23A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 14A, 10V
Power Dissipation (Max): 3.8W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
Produkt ist nicht verfügbar
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IRFS23N15DTRLP irfs23n15dpbf.pdf?fileId=5546d462533600a4015356361eff2140
IRFS23N15DTRLP
Hersteller: Infineon Technologies
Description: MOSFET N-CH 150V 23A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 14A, 10V
Power Dissipation (Max): 3.8W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
Produkt ist nicht verfügbar
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IRFS23N15DTRLP irfs23n15dpbf.pdf?fileId=5546d462533600a4015356361eff2140
IRFS23N15DTRLP
Hersteller: Infineon Technologies
Description: MOSFET N-CH 150V 23A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 14A, 10V
Power Dissipation (Max): 3.8W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
Produkt ist nicht verfügbar
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2EDN7523GXTMA1 Infineon-2EDN752x-2EDN852x-DS--DS-v02_03-EN.pdf?fileId=5546d462525dbac40152abcc7dbb1727
2EDN7523GXTMA1
Hersteller: Infineon Technologies
Description: IC GATE DRVR LOW-SIDE 8WSON
Packaging: Tape & Reel (TR)
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 20V
Input Type: Inverting
Supplier Device Package: PG-WSON-8-1
Rise / Fall Time (Typ): 5.3ns, 4.5ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Current - Peak Output (Source, Sink): 5A, 5A
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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2EDN7523GXTMA1 Infineon-2EDN752x-2EDN852x-DS--DS-v02_03-EN.pdf?fileId=5546d462525dbac40152abcc7dbb1727
2EDN7523GXTMA1
Hersteller: Infineon Technologies
Description: IC GATE DRVR LOW-SIDE 8WSON
Packaging: Cut Tape (CT)
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 20V
Input Type: Inverting
Supplier Device Package: PG-WSON-8-1
Rise / Fall Time (Typ): 5.3ns, 4.5ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Current - Peak Output (Source, Sink): 5A, 5A
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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2EDN8524GXTMA1 Infineon-2EDN752x-2EDN852x-DS--DS-v02_03-EN.pdf?fileId=5546d462525dbac40152abcc7dbb1727
2EDN8524GXTMA1
Hersteller: Infineon Technologies
Description: IC GATE DRVR LOW-SIDE 8WSON
Packaging: Tape & Reel (TR)
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 20V
Input Type: Non-Inverting
Supplier Device Package: PG-WSON-8-1
Rise / Fall Time (Typ): 5.3ns, 4.5ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 1.1V, 1.98V
Current - Peak Output (Source, Sink): 5A, 5A
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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2EDN8524GXTMA1 Infineon-2EDN752x-2EDN852x-DS--DS-v02_03-EN.pdf?fileId=5546d462525dbac40152abcc7dbb1727
2EDN8524GXTMA1
Hersteller: Infineon Technologies
Description: IC GATE DRVR LOW-SIDE 8WSON
Packaging: Cut Tape (CT)
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 20V
Input Type: Non-Inverting
Supplier Device Package: PG-WSON-8-1
Rise / Fall Time (Typ): 5.3ns, 4.5ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 1.1V, 1.98V
Current - Peak Output (Source, Sink): 5A, 5A
DigiKey Programmable: Not Verified
auf Bestellung 3380 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
12+1.48 EUR
17+1.06 EUR
25+0.96 EUR
100+0.84 EUR
250+0.79 EUR
500+0.75 EUR
1000+0.73 EUR
Mindestbestellmenge: 12
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EVAL2500WPFCGANATOBO1 Infineon-2EDN752x-2EDN852x-DS--DS-v02_05-EN.pdf?fileId=5546d462525dbac40152abcc7dbb1727
EVAL2500WPFCGANATOBO1
Hersteller: Infineon Technologies
Description: 2500W FULL BRIDGE TOTEM
Packaging: Bulk
Function: Gate Driver
Type: Power Management
Utilized IC / Part: 2EDN7524R
Supplied Contents: Board(s)
Primary Attributes: 2-Channel (Dual)
Contents: Board(s)
auf Bestellung 5 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+854.85 EUR
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2EDN7434BXTSA1
Hersteller: Infineon Technologies
Description: DRIVER IC PG-SOT23-6
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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2EDN7434BXTSA1
Hersteller: Infineon Technologies
Description: DRIVER IC PG-SOT23-6
Packaging: Cut Tape (CT)
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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AUIRFB3806 AUIRFB3806_Web.pdf
AUIRFB3806
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 43A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
Rds On (Max) @ Id, Vgs: 15.8mOhm @ 25A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 4V @ 50µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 50 V
Produkt ist nicht verfügbar
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IRFB42N20DPBF irfb42n20dpbf.pdf?fileId=5546d462533600a40153561606c81e27
IRFB42N20DPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 200V 44A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 26A, 10V
Power Dissipation (Max): 2.4W (Ta), 330W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3430 pF @ 25 V
Produkt ist nicht verfügbar
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IRFB23N20DPBF irfs23n20dpbf.pdf?fileId=5546d462533600a40153563628372143
IRFB23N20DPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 200V 24A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 14A, 10V
Power Dissipation (Max): 3.8W (Ta), 170W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1960 pF @ 25 V
Produkt ist nicht verfügbar
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BSM100GB60DLCHOSA1 Infineon-BSM100GB60DLC-DS-v01_00-en_de.pdf?fileId=db3a304412b407950112b4349b3960c4
BSM100GB60DLCHOSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 600V 130A 445W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: Module
Current - Collector (Ic) (Max): 130 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 445 W
Current - Collector Cutoff (Max): 500 µA
auf Bestellung 1763 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+109.53 EUR
Mindestbestellmenge: 5
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BSM100GB60DLCHOSA1 Infineon-BSM100GB60DLC-DS-v01_00-en_de.pdf?fileId=db3a304412b407950112b4349b3960c4
BSM100GB60DLCHOSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 600V 130A 445W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: Module
Current - Collector (Ic) (Max): 130 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 445 W
Current - Collector Cutoff (Max): 500 µA
Produkt ist nicht verfügbar
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BSM100GB120DLCHOSA1 INFNS11478-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 100A 830W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 125°C
NTC Thermistor: Yes
Supplier Device Package: Module
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 830 W
Produkt ist nicht verfügbar
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BSM100GB170DLCHOSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1700V 200A 960W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: Module
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 960 W
Current - Collector Cutoff (Max): 200 µA
Input Capacitance (Cies) @ Vce: 7 nF @ 25 V
auf Bestellung 200 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+220.01 EUR
Mindestbestellmenge: 3
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D1721NH90TAOSA1 Infineon-D1721NH90T-DS-v04_00-DE.pdf?fileId=5546d46255dd933d0155fd86888d3ac4
D1721NH90TAOSA1
Hersteller: Infineon Technologies
Description: DIODE GEN PURP 2160A D10026K-1
Packaging: Tray
Package / Case: DO-200, Variant
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 2160A
Supplier Device Package: BG-D10026K-1
Operating Temperature - Junction: 0°C ~ 140°C
Current - Reverse Leakage @ Vr: 150 mA @ 9000 V
Produkt ist nicht verfügbar
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DD340N18SHPSA1 DD340N18S.pdf
DD340N18SHPSA1
Hersteller: Infineon Technologies
Description: DIODE MOD GP 1800V 330A BGPB50SB
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 330A
Supplier Device Package: BG-PB50SB-1
Operating Temperature - Junction: -40°C ~ 135°C
Voltage - DC Reverse (Vr) (Max): 1800 V
Current - Reverse Leakage @ Vr: 1 mA @ 1800 V
auf Bestellung 6 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+131.31 EUR
Mindestbestellmenge: 4
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IRG4BC30WPBF description irg4bc30wpbf.pdf?fileId=5546d462533600a40153564014f2228d
IRG4BC30WPBF
Hersteller: Infineon Technologies
Description: IGBT 600V 23A TO-220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 12A
Supplier Device Package: TO-220AB
Td (on/off) @ 25°C: 25ns/99ns
Switching Energy: 130µJ (on), 130µJ (off)
Test Condition: 480V, 12A, 23Ohm, 15V
Gate Charge: 51 nC
Current - Collector (Ic) (Max): 23 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 92 A
Power - Max: 100 W
Produkt ist nicht verfügbar
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IAUC120N06S5L011ATMA1 Infineon-IAUC120N06S5L011-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7fb5929e017fc1b680d712ef
IAUC120N06S5L011ATMA1
Hersteller: Infineon Technologies
Description: MOSFET_)40V 60V)
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 310A (Tj)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 60A, 10V
Power Dissipation (Max): 188W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 130µA
Supplier Device Package: PG-TDSON-8-53
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11400 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2738 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.54 EUR
10+3.63 EUR
100+2.54 EUR
500+2.22 EUR
Mindestbestellmenge: 4
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IAUC120N06S5N032ATMA1 Infineon-IAUC120N06S5N032-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8386267f0183a8692a6a2df6
IAUC120N06S5N032ATMA1
Hersteller: Infineon Technologies
Description: MOSFET_)40V 60V)
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tj)
Rds On (Max) @ Id, Vgs: 3.23mOhm @ 60A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 44µA
Supplier Device Package: PG-TDSON-8-34
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3446 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 8610 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.03 EUR
10+1.92 EUR
100+1.3 EUR
500+1.03 EUR
1000+0.96 EUR
Mindestbestellmenge: 6
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IAUC120N06S5L022ATMA1 Infineon-IAUC120N06S5L022-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8386267f0183b275d5cd0ef1
IAUC120N06S5L022ATMA1
Hersteller: Infineon Technologies
Description: MOSFET_)40V 60V)
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170A (Tj)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 60A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 65µA
Supplier Device Package: PG-TDSON-8-34
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5651 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 4627 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.56 EUR
10+2.29 EUR
100+1.56 EUR
500+1.25 EUR
1000+1.21 EUR
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S25FL128SAGNFI011 Infineon-S25FL128S_S25FL256S_128_Mb_(16_MB)_256_Mb_(32_MB)_3.0V_SPI_Flash_Memory-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecfb6a64a17
S25FL128SAGNFI011
Hersteller: Infineon Technologies
Description: IC FLASH 128MBIT SPI/QUAD 8WSON
Packaging: Tube
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 8-WSON (6x8)
Memory Interface: SPI - Quad I/O
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
auf Bestellung 991 Stücke:
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Anzahl Preis
4+5.09 EUR
10+4.75 EUR
25+4.61 EUR
82+4.43 EUR
164+4.33 EUR
328+4.22 EUR
574+4.14 EUR
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S25FL128SAGNFM000 Infineon-S25FL128S_S25FL256S_128_Mb_(16_MB)_256_Mb_(32_MB)_3.0V_SPI_Flash_Memory-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecfb6a64a17
S25FL128SAGNFM000
Hersteller: Infineon Technologies
Description: IC FLASH 128MBIT SPI/QUAD 8WSON
Packaging: Tray
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 8-WSON (6x8)
Memory Interface: SPI - Quad I/O
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 523 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.56 EUR
10+6.12 EUR
25+5.93 EUR
50+5.8 EUR
100+5.66 EUR
338+5.42 EUR
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AUIRF7343QTR auirf7343q.pdf?fileId=5546d462533600a4015355ad45c613e0
AUIRF7343QTR
Hersteller: Infineon Technologies
Description: MOSFET N/P-CH 55V 4.7A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 4.7A, 3.4A
Input Capacitance (Ciss) (Max) @ Vds: 740pF @ 25V
Rds On (Max) @ Id, Vgs: 50mOhm @ 4.7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SOIC
Produkt ist nicht verfügbar
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AUIRF7343QTR auirf7343q.pdf?fileId=5546d462533600a4015355ad45c613e0
AUIRF7343QTR
Hersteller: Infineon Technologies
Description: MOSFET N/P-CH 55V 4.7A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 4.7A, 3.4A
Input Capacitance (Ciss) (Max) @ Vds: 740pF @ 25V
Rds On (Max) @ Id, Vgs: 50mOhm @ 4.7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SOIC
Produkt ist nicht verfügbar
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IPD60R600E6ATMA1 Infineon-IPD60R600E6-DS-v02_02-EN.pdf?fileId=db3a30433f1b26e8013f1f009327039e
IPD60R600E6ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 7.3A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 2.4A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 200µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 20.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 100 V
Produkt ist nicht verfügbar
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IRG4BC30KD-SPBF description irg4bc30kd-spbf.pdf?fileId=5546d462533600a40153563fcdc8227b
IRG4BC30KD-SPBF
Hersteller: Infineon Technologies
Description: IGBT 600V 28A 100W D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 42 ns
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 16A
Supplier Device Package: D2PAK
Td (on/off) @ 25°C: 60ns/160ns
Switching Energy: 600µJ (on), 580µJ (off)
Test Condition: 480V, 16A, 23Ohm, 15V
Gate Charge: 67 nC
Current - Collector (Ic) (Max): 28 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 56 A
Power - Max: 100 W
Produkt ist nicht verfügbar
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IRG4BC30FDPBF description irg4bc30fdpbf.pdf?fileId=5546d462533600a40153563fa7ab2271
IRG4BC30FDPBF
Hersteller: Infineon Technologies
Description: IGBT 600V 31A TO-220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 42 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 17A
Supplier Device Package: TO-220AB
Td (on/off) @ 25°C: 42ns/230ns
Switching Energy: 630µJ (on), 1.39mJ (off)
Test Condition: 480V, 17A, 23Ohm, 15V
Gate Charge: 51 nC
Current - Collector (Ic) (Max): 31 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 124 A
Power - Max: 100 W
Produkt ist nicht verfügbar
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IRG4BC30F-SPBF IRG4BC30F.pdf
IRG4BC30F-SPBF
Hersteller: Infineon Technologies
Description: IGBT 600V 31A 100W D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 17A
Supplier Device Package: D2PAK
Td (on/off) @ 25°C: 21ns/200ns
Switching Energy: 230µJ (on), 1.18mJ (off)
Test Condition: 480V, 17A, 23Ohm, 15V
Gate Charge: 51 nC
Current - Collector (Ic) (Max): 31 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 100 W
Produkt ist nicht verfügbar
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IRG4BC30FD-SPBF irg4bc30fd-spbf.pdf?fileId=5546d462533600a40153563fafdd2273
IRG4BC30FD-SPBF
Hersteller: Infineon Technologies
Description: IGBT 600V 31A 100W D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 42 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 17A
Supplier Device Package: D2PAK
Td (on/off) @ 25°C: 42ns/230ns
Switching Energy: 630µJ (on), 1.39mJ (off)
Test Condition: 480V, 17A, 23Ohm, 15V
Gate Charge: 51 nC
Current - Collector (Ic) (Max): 31 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 124 A
Power - Max: 100 W
Produkt ist nicht verfügbar
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IRG4PC40KPBF fundamentals-of-power-semiconductors
IRG4PC40KPBF
Hersteller: Infineon Technologies
Description: IGBT 600V 42A TO-247AC
Packaging: Bag
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 25A
Supplier Device Package: TO-247AC
Td (on/off) @ 25°C: 30ns/140ns
Switching Energy: 620µJ (on), 330µJ (off)
Test Condition: 480V, 25A, 10Ohm, 15V
Gate Charge: 120 nC
Current - Collector (Ic) (Max): 42 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 84 A
Power - Max: 160 W
Produkt ist nicht verfügbar
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IRG4PC40FDPBF irg4pc40fdpbf.pdf?fileId=5546d462533600a40153564401d422d2
IRG4PC40FDPBF
Hersteller: Infineon Technologies
Description: IGBT 600V 49A TO-247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 42 ns
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 27A
Supplier Device Package: TO-247AC
Td (on/off) @ 25°C: 63ns/230ns
Switching Energy: 950µJ (on), 2.01mJ (off)
Test Condition: 480V, 27A, 10Ohm, 15V
Gate Charge: 100 nC
Current - Collector (Ic) (Max): 49 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 196 A
Power - Max: 160 W
Produkt ist nicht verfügbar
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T920N06TOFXPSA1 Infineon-T920N-DS-v03_01-en_de.pdf?fileId=db3a3043284aacd80128634e0db252f7
T920N06TOFXPSA1
Hersteller: Infineon Technologies
Description: SCR MODULE 600V 1500A DO200AA
Packaging: Tray
Package / Case: DO-200AA, A-PUK
Mounting Type: Clamp On
Operating Temperature: -40°C ~ 140°C
Structure: Single
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 200 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 13500A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 925 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (RMS)) (Max): 1500 A
Voltage - Off State: 600 V
Produkt ist nicht verfügbar
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S29GL512S10FHI010 Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai
S29GL512S10FHI010
Hersteller: Infineon Technologies
Description: IC FLASH 512MBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (11x13)
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 32M x 16
DigiKey Programmable: Verified
auf Bestellung 238 Stücke:
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Anzahl Preis
2+17.48 EUR
10+15.51 EUR
25+14.79 EUR
40+14.43 EUR
180+13.34 EUR
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IPP018N10N5AKSA1 Infineon-IPP018N10N5-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c85c5e5aa0185e4544cf66df7
IPP018N10N5AKSA1
Hersteller: Infineon Technologies
Description: TRENCH >=100V
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Ta), 205A (Tc)
Rds On (Max) @ Id, Vgs: 1.83mOhm @ 100A, 10V
Power Dissipation (Max): 3.8W (Ta), 375W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 270µA
Supplier Device Package: PG-TO220-3
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16000 pF @ 50 V
auf Bestellung 450 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+11.84 EUR
50+6.36 EUR
100+5.83 EUR
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IPP018N10N5XKSA1 Infineon-IPP018N10N5-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c85c5e5aa0185e4544cf66df7
IPP018N10N5XKSA1
Hersteller: Infineon Technologies
Description: TRENCH >=100V
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 205A (Tc)
Rds On (Max) @ Id, Vgs: 1.83mOhm @ 100A, 10V
Power Dissipation (Max): 3.8W (Ta), 375W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 270µA
Supplier Device Package: PG-TO220-3
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16000 pF @ 50 V
auf Bestellung 480 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+11.76 EUR
50+6.32 EUR
100+5.8 EUR
Mindestbestellmenge: 2
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IPB018N10N5ATMA1 Infineon-IPB018N10N5-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c85c5e5aa0185e4420f246df4
IPB018N10N5ATMA1
Hersteller: Infineon Technologies
Description: TRENCH >=100V
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Ta), 176A (Tc)
Rds On (Max) @ Id, Vgs: 1.83mOhm @ 100A, 10V
Power Dissipation (Max): 3.8W (Ta), 375W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 270µA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16000 pF @ 50 V
Produkt ist nicht verfügbar
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