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ESD157B1W01005E6327XTSA1 ESD157B1W01005E6327XTSA1 Infineon Technologies Infineon-ESD157-B1-W01005-DataSheet-v01_02-EN.pdf?fileId=8ac78c8c85ecb3470185eea133f700a3 Description: TVS DIODE 3.3VWM 3.6V SGWLL22
Packaging: Cut Tape (CT)
Package / Case: 01005 (0402 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TA)
Applications: HDMI, USB
Capacitance @ Frequency: 0.17pF @ 10GHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: SG-WLL-2-2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.9V
Voltage - Clamping (Max) @ Ipp: 3.6V (Typ)
Power - Peak Pulse: 7.2W
Power Line Protection: No
auf Bestellung 12167 Stücke:
Lieferzeit 10-14 Tag (e)
77+0.23 EUR
129+0.14 EUR
237+0.074 EUR
500+0.061 EUR
1000+0.044 EUR
2000+0.043 EUR
5000+0.035 EUR
Mindestbestellmenge: 77
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ESD156B1W0201E6327XTSA1 ESD156B1W0201E6327XTSA1 Infineon Technologies Infineon-ESD156-B1-W0201-DataSheet-v01_02-EN.pdf?fileId=8ac78c8c85ecb3470185eea129d200a0 Description: TVS DIODE 3.6VWM 3.5V SGWLL23
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TA)
Applications: HDMI, USB
Capacitance @ Frequency: 0.19pF @ 10GHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.6V (Max)
Supplier Device Package: SG-WLL-2-3
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.9V
Voltage - Clamping (Max) @ Ipp: 3.5V (Typ)
Power - Peak Pulse: 7W
Power Line Protection: No
Produkt ist nicht verfügbar
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ESD156B1W0201E6327XTSA1 ESD156B1W0201E6327XTSA1 Infineon Technologies Infineon-ESD156-B1-W0201-DataSheet-v01_02-EN.pdf?fileId=8ac78c8c85ecb3470185eea129d200a0 Description: TVS DIODE 3.6VWM 3.5V SGWLL23
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TA)
Applications: HDMI, USB
Capacitance @ Frequency: 0.19pF @ 10GHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.6V (Max)
Supplier Device Package: SG-WLL-2-3
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.9V
Voltage - Clamping (Max) @ Ipp: 3.5V (Typ)
Power - Peak Pulse: 7W
Power Line Protection: No
auf Bestellung 8952 Stücke:
Lieferzeit 10-14 Tag (e)
77+0.23 EUR
117+0.15 EUR
179+0.099 EUR
500+0.068 EUR
1000+0.046 EUR
2000+0.044 EUR
5000+0.043 EUR
Mindestbestellmenge: 77
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ESD151B1W0201E6327XTSA1 ESD151B1W0201E6327XTSA1 Infineon Technologies Infineon-ESD151-B1-W0201-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8b6555fe018c0fddfad27743 Description: TVS DIODE 3.3VWM 3.5V SGWLL23
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TA)
Applications: HDMI, USB
Capacitance @ Frequency: 0.08pF @ 10GHz
Current - Peak Pulse (10/1000µs): 1A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: SG-WLL-2-3
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.9V
Voltage - Clamping (Max) @ Ipp: 3.5V (Typ)
Power - Peak Pulse: 3.5W
Power Line Protection: No
Produkt ist nicht verfügbar
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ESD151B1W0201E6327XTSA1 ESD151B1W0201E6327XTSA1 Infineon Technologies Infineon-ESD151-B1-W0201-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8b6555fe018c0fddfad27743 Description: TVS DIODE 3.3VWM 3.5V SGWLL23
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TA)
Applications: HDMI, USB
Capacitance @ Frequency: 0.08pF @ 10GHz
Current - Peak Pulse (10/1000µs): 1A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: SG-WLL-2-3
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.9V
Voltage - Clamping (Max) @ Ipp: 3.5V (Typ)
Power - Peak Pulse: 3.5W
Power Line Protection: No
auf Bestellung 520 Stücke:
Lieferzeit 10-14 Tag (e)
67+0.26 EUR
105+0.17 EUR
179+0.099 EUR
500+0.074 EUR
Mindestbestellmenge: 67
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ESD155B2W0201E6327XTSA1 ESD155B2W0201E6327XTSA1 Infineon Technologies Infineon-ESD155-B2-W0201-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c85ecb3470185eea11ea9009d Description: TVS DIODE 3.3VWM 3.5V SGWLL31
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TA)
Applications: HDMI, USB
Capacitance @ Frequency: 0.18pF @ 10GHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: SG-WLL-3-1
Bidirectional Channels: 2
Voltage - Breakdown (Min): 5.9V
Voltage - Clamping (Max) @ Ipp: 3.5V (Typ)
Power - Peak Pulse: 7W
Power Line Protection: No
Produkt ist nicht verfügbar
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ESD155B2W0201E6327XTSA1 ESD155B2W0201E6327XTSA1 Infineon Technologies Infineon-ESD155-B2-W0201-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c85ecb3470185eea11ea9009d Description: TVS DIODE 3.3VWM 3.5V SGWLL31
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TA)
Applications: HDMI, USB
Capacitance @ Frequency: 0.18pF @ 10GHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: SG-WLL-3-1
Bidirectional Channels: 2
Voltage - Breakdown (Min): 5.9V
Voltage - Clamping (Max) @ Ipp: 3.5V (Typ)
Power - Peak Pulse: 7W
Power Line Protection: No
auf Bestellung 11825 Stücke:
Lieferzeit 10-14 Tag (e)
53+0.33 EUR
87+0.2 EUR
140+0.13 EUR
500+0.092 EUR
1000+0.081 EUR
2000+0.072 EUR
5000+0.062 EUR
Mindestbestellmenge: 53
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CY7C1020D-10ZSXI CY7C1020D-10ZSXI Infineon Technologies download Description: IC SRAM 512KBIT PAR 44TSOP II
Packaging: Tray
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 512Kbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 32K x 16
DigiKey Programmable: Not Verified
auf Bestellung 515 Stücke:
Lieferzeit 10-14 Tag (e)
2+9.94 EUR
10+9.08 EUR
25+8.91 EUR
40+8.84 EUR
135+7.94 EUR
270+7.91 EUR
Mindestbestellmenge: 2
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AUIRLS3034-7TRL AUIRLS3034-7TRL Infineon Technologies auirls3034-7p.pdf?fileId=5546d462533600a4015355bec2b41586 Description: MOSFET N-CH 40V 240A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 200A, 10V
Power Dissipation (Max): 380W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: D2PAK (7-Lead)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 10990 pF @ 40 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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IPZA65R018CFD7XKSA1 IPZA65R018CFD7XKSA1 Infineon Technologies Infineon-IPZA65R018CFD7-DataSheet-v02_00-EN.pdf?fileId=5546d4627572d8fd01758f0d89607bbf Description: HIGH POWER_NEW
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 106A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 58.2A, 10V
Power Dissipation (Max): 446W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 2.91mA
Supplier Device Package: PG-TO247-4-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 234 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11660 pF @ 400 V
Produkt ist nicht verfügbar
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IPDQ65R017CFD7AXTMA1 IPDQ65R017CFD7AXTMA1 Infineon Technologies Infineon-IPDQ65R017CFD7A-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c869190210186cb76d75333a8 Description: AUTOMOTIVE_COOLMOS
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 136A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 61.6A, 10V
Power Dissipation (Max): 694W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 3.08mA
Supplier Device Package: PG-HDSOP-22-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 236 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12338 pF @ 400 V
Qualification: AEC-Q101
auf Bestellung 131 Stücke:
Lieferzeit 10-14 Tag (e)
1+24.78 EUR
10+19.65 EUR
25+18.37 EUR
100+16.96 EUR
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IPDQ65R029CFD7AXTMA1 IPDQ65R029CFD7AXTMA1 Infineon Technologies Infineon-IPDQ65R029CFD7A-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c869190210186cb76e6ef33ab Description: AUTOMOTIVE_COOLMOS
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 35.8A, 10V
Power Dissipation (Max): 463W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.79mA
Supplier Device Package: PG-HDSOP-22-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 139 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7149 pF @ 400 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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IPDQ65R029CFD7AXTMA1 IPDQ65R029CFD7AXTMA1 Infineon Technologies Infineon-IPDQ65R029CFD7A-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c869190210186cb76e6ef33ab Description: AUTOMOTIVE_COOLMOS
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 35.8A, 10V
Power Dissipation (Max): 463W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.79mA
Supplier Device Package: PG-HDSOP-22-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 139 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7149 pF @ 400 V
Qualification: AEC-Q101
auf Bestellung 728 Stücke:
Lieferzeit 10-14 Tag (e)
2+16.21 EUR
10+12.67 EUR
25+11.78 EUR
100+10.82 EUR
250+10.35 EUR
Mindestbestellmenge: 2
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IQE004NE1LM7CGATMA1 IQE004NE1LM7CGATMA1 Infineon Technologies Infineon-IQE004NE1LM7CG-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8ada5435018ae4c205bf478b Description: TRENCH <= 40V
Packaging: Tape & Reel (TR)
Package / Case: 9-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Ta), 379A (Tc)
Rds On (Max) @ Id, Vgs: 0.45mOhm @ 30A, 7V
Power Dissipation (Max): 2.1W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2V @ 432µA
Supplier Device Package: PG-TTFN-9-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V
Vgs (Max): ±7V
Drain to Source Voltage (Vdss): 15 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 7 V
Input Capacitance (Ciss) (Max) @ Vds: 6240 pF @ 7.5 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
5000+1.77 EUR
Mindestbestellmenge: 5000
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IQE004NE1LM7CGATMA1 IQE004NE1LM7CGATMA1 Infineon Technologies Infineon-IQE004NE1LM7CG-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8ada5435018ae4c205bf478b Description: TRENCH <= 40V
Packaging: Cut Tape (CT)
Package / Case: 9-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Ta), 379A (Tc)
Rds On (Max) @ Id, Vgs: 0.45mOhm @ 30A, 7V
Power Dissipation (Max): 2.1W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2V @ 432µA
Supplier Device Package: PG-TTFN-9-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V
Vgs (Max): ±7V
Drain to Source Voltage (Vdss): 15 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 7 V
Input Capacitance (Ciss) (Max) @ Vds: 6240 pF @ 7.5 V
auf Bestellung 9980 Stücke:
Lieferzeit 10-14 Tag (e)
5+4.07 EUR
10+3.38 EUR
100+2.69 EUR
500+2.28 EUR
1000+1.93 EUR
2000+1.83 EUR
Mindestbestellmenge: 5
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IQE004NE1LM7ATMA1 Infineon Technologies Description: TRENCH <= 40V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Ta), 379A (Tc)
Rds On (Max) @ Id, Vgs: 0.45mOhm @ 30A, 7V
Power Dissipation (Max): 2.1W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2V @ 432µA
Supplier Device Package: PG-TSON-8-5
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V
Vgs (Max): ±7V
Drain to Source Voltage (Vdss): 15 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 7 V
Input Capacitance (Ciss) (Max) @ Vds: 6240 pF @ 7.5 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
5000+1.81 EUR
Mindestbestellmenge: 5000
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IQE004NE1LM7ATMA1 Infineon Technologies Description: TRENCH <= 40V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Ta), 379A (Tc)
Rds On (Max) @ Id, Vgs: 0.45mOhm @ 30A, 7V
Power Dissipation (Max): 2.1W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2V @ 432µA
Supplier Device Package: PG-TSON-8-5
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V
Vgs (Max): ±7V
Drain to Source Voltage (Vdss): 15 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 7 V
Input Capacitance (Ciss) (Max) @ Vds: 6240 pF @ 7.5 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
5+4.17 EUR
10+3.47 EUR
100+2.76 EUR
500+2.33 EUR
1000+1.98 EUR
2000+1.88 EUR
Mindestbestellmenge: 5
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IQE004NE1LM7CGSCATMA1 IQE004NE1LM7CGSCATMA1 Infineon Technologies Infineon-IQE004NE1LM7CGSC-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8ada5435018ae4c1f8664788 Description: TRENCH <= 40V
Packaging: Tape & Reel (TR)
Package / Case: 9-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Ta), 379A (Tc)
Rds On (Max) @ Id, Vgs: 0.45mOhm @ 30A, 7V
Power Dissipation (Max): 2.1W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2V @ 432µA
Supplier Device Package: PG-WHTFN-9
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V
Vgs (Max): ±7V
Drain to Source Voltage (Vdss): 15 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 7 V
Input Capacitance (Ciss) (Max) @ Vds: 6240 pF @ 7.5 V
Produkt ist nicht verfügbar
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IQE004NE1LM7CGSCATMA1 IQE004NE1LM7CGSCATMA1 Infineon Technologies Infineon-IQE004NE1LM7CGSC-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8ada5435018ae4c1f8664788 Description: TRENCH <= 40V
Packaging: Cut Tape (CT)
Package / Case: 9-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Ta), 379A (Tc)
Rds On (Max) @ Id, Vgs: 0.45mOhm @ 30A, 7V
Power Dissipation (Max): 2.1W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2V @ 432µA
Supplier Device Package: PG-WHTFN-9
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V
Vgs (Max): ±7V
Drain to Source Voltage (Vdss): 15 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 7 V
Input Capacitance (Ciss) (Max) @ Vds: 6240 pF @ 7.5 V
auf Bestellung 5264 Stücke:
Lieferzeit 10-14 Tag (e)
4+4.44 EUR
10+2.88 EUR
100+1.99 EUR
500+1.65 EUR
Mindestbestellmenge: 4
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IQE004NE1LM7SCATMA1 IQE004NE1LM7SCATMA1 Infineon Technologies Infineon-IQE004NE1LM7SC-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8ada5435018ae246370f63e0 Description: TRENCH <= 40V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Ta), 379A (Tc)
Rds On (Max) @ Id, Vgs: 0.45mOhm @ 30A, 7V
Power Dissipation (Max): 2.1W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2V @ 432µA
Supplier Device Package: PG-WHSON-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V
Vgs (Max): ±7V
Drain to Source Voltage (Vdss): 15 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 7 V
Input Capacitance (Ciss) (Max) @ Vds: 6240 pF @ 7.5 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
6000+1.37 EUR
Mindestbestellmenge: 6000
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IQE004NE1LM7SCATMA1 IQE004NE1LM7SCATMA1 Infineon Technologies Infineon-IQE004NE1LM7SC-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8ada5435018ae246370f63e0 Description: TRENCH <= 40V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Ta), 379A (Tc)
Rds On (Max) @ Id, Vgs: 0.45mOhm @ 30A, 7V
Power Dissipation (Max): 2.1W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2V @ 432µA
Supplier Device Package: PG-WHSON-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V
Vgs (Max): ±7V
Drain to Source Voltage (Vdss): 15 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 7 V
Input Capacitance (Ciss) (Max) @ Vds: 6240 pF @ 7.5 V
auf Bestellung 10543 Stücke:
Lieferzeit 10-14 Tag (e)
5+3.56 EUR
10+2.59 EUR
100+1.96 EUR
500+1.67 EUR
Mindestbestellmenge: 5
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IGC54T65R3QEX1SA1 IGC54T65R3QEX1SA1 Infineon Technologies Infineon-IGC54T65R3QE_L7584E-DS-v01_01-en.pdf?fileId=db3a30433b47825b013b6ae660a31d73 Description: IGBT TRENCH FS 650V 100A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.22V @ 15V, 100A
Supplier Device Package: Die
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 300 A
Produkt ist nicht verfügbar
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S29GL512S11TFI010 S29GL512S11TFI010 Infineon Technologies Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai Description: IC FLASH 512MBIT PARALLEL 56TSOP
Packaging: Tray
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 32M x 16
DigiKey Programmable: Verified
auf Bestellung 517 Stücke:
Lieferzeit 10-14 Tag (e)
2+16.1 EUR
10+14.91 EUR
25+14.57 EUR
40+14.49 EUR
91+12.76 EUR
273+12.13 EUR
455+12 EUR
Mindestbestellmenge: 2
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S29GL128P90FFIR20 S29GL128P90FFIR20 Infineon Technologies 128_Mbit_3_V_Page_Flash_with_90_nm_MirrorBit_Process_Technology-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed7850458a5&utm_source=cypress&utm_medium=ref Description: IC FLASH 128MBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Write Cycle Time - Word, Page: 90ns
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 16M x 8
DigiKey Programmable: Verified
auf Bestellung 807 Stücke:
Lieferzeit 10-14 Tag (e)
2+10.4 EUR
10+9.68 EUR
25+9.39 EUR
50+9.17 EUR
180+8.76 EUR
360+8.54 EUR
540+8.41 EUR
Mindestbestellmenge: 2
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ISC035N10NM5LFATMA1 ISC035N10NM5LFATMA1 Infineon Technologies Description: OPTIMOSTM5LINEARFET100V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 164A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 217W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 115µA
Supplier Device Package: PG-TDSON-8 FL
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 50 V
Produkt ist nicht verfügbar
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ISC035N10NM5LFATMA1 ISC035N10NM5LFATMA1 Infineon Technologies Description: OPTIMOSTM5LINEARFET100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 164A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 217W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 115µA
Supplier Device Package: PG-TDSON-8 FL
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 50 V
Produkt ist nicht verfügbar
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REFICC80QSG84W3BPATOBO1 REFICC80QSG84W3BPATOBO1 Infineon Technologies Infineon-ICC80QSG-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c80027ecd0180b1cf85f62eaa Description: REF FOR POWER TOOL BATTERY CHARG
Packaging: Bulk
Function: Battery Charger
Type: Power Management
Utilized IC / Part: ICC80QSG, IPN70R450P7S
Supplied Contents: Board(s)
Primary Attributes: 110 ~ 230 VAC Input Voltage
Embedded: No
auf Bestellung 1 Stücke:
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1+174.91 EUR
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2EDN8523RXTMA1 2EDN8523RXTMA1 Infineon Technologies Infineon-2EDN752x-2EDN852x-DS--DS-v02_05-EN.pdf?fileId=5546d462525dbac40152abcc7dbb1727 Description: IC GATE DRVR LOW-SIDE 8TSSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 20V
Input Type: Non-Inverting
Supplier Device Package: PG-TSSOP-8
Rise / Fall Time (Typ): 5.3ns, 4.5ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 1.1V, 1.98V
Current - Peak Output (Source, Sink): 5A, 5A
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY7C652148-24LTXIT CY7C652148-24LTXIT Infineon Technologies Infineon-CY7C652148-24LTXIT-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eea27217302 Description: USB Full-Speed Peripherals
Packaging: Cut Tape (CT)
Package / Case: 24-UFQFN Exposed Pad
Function: Bridge
Interface: GPIO, SPI
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.71V ~ 1.89V, 2V ~ 3.45V, 3.15V ~ 5.25V, 4.35V ~ 5.5V
Current - Supply: 20mA
Protocol: USB
Standards: USB 2.0
Supplier Device Package: 24-QFN (4x4)
DigiKey Programmable: Not Verified
auf Bestellung 2217 Stücke:
Lieferzeit 10-14 Tag (e)
4+4.66 EUR
10+3.5 EUR
25+3.21 EUR
100+2.88 EUR
250+2.73 EUR
500+2.64 EUR
1000+2.56 EUR
Mindestbestellmenge: 4
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CY7C65223-24LTXIT CY7C65223-24LTXIT Infineon Technologies Infineon-CY7C65223-24LTXIT-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eea23ff72fe Description: USB Full-Speed Peripherals
Packaging: Cut Tape (CT)
Package / Case: 24-UFQFN Exposed Pad
Function: Bridge
Interface: GPIO, UART
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.71V ~ 1.89V, 2V ~ 3.45V, 3.15V ~ 5.25V, 4.35V ~ 5.5V
Current - Supply: 20mA
Protocol: USB
Standards: USB 2.0
Supplier Device Package: 24-QFN (4x4)
DigiKey Programmable: Not Verified
auf Bestellung 1393 Stücke:
Lieferzeit 10-14 Tag (e)
4+4.98 EUR
10+3.74 EUR
25+3.42 EUR
100+3.08 EUR
250+2.92 EUR
500+2.82 EUR
1000+2.74 EUR
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CYT2B95BACQ0AZSGST CYT2B95BACQ0AZSGST Infineon Technologies Infineon-CYT2B9_Datasheet_32-bit_Arm_Cortex-M4F_Microcontroller_TRAVEO_T2G_Family-AdditionalTechnicalInformation-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee9c191729c Description: IC MCU 32BT 2.0625MB FLSH 100QFP
Packaging: Tape & Reel (TR)
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 100MHz, 160MHz
Program Memory Size: 2.0625MB (2.0625M x 8)
RAM Size: 256K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
Data Converters: A/D 57x12b SAR
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, FIFO, I2C, IrDA, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, LVD, POR, PWM, SHA, TRNG, WDT
Supplier Device Package: 100-LQFP (14x14)
Number of I/O: 78
DigiKey Programmable: Not Verified
auf Bestellung 500 Stücke:
Lieferzeit 10-14 Tag (e)
500+13.44 EUR
Mindestbestellmenge: 500
Im Einkaufswagen  Stück im Wert von  UAH
CYT2B95BACQ0AZSGST CYT2B95BACQ0AZSGST Infineon Technologies Infineon-CYT2B9_Datasheet_32-bit_Arm_Cortex-M4F_Microcontroller_TRAVEO_T2G_Family-AdditionalTechnicalInformation-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee9c191729c Description: IC MCU 32BT 2.0625MB FLSH 100QFP
Packaging: Cut Tape (CT)
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 100MHz, 160MHz
Program Memory Size: 2.0625MB (2.0625M x 8)
RAM Size: 256K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
Data Converters: A/D 57x12b SAR
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, FIFO, I2C, IrDA, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, LVD, POR, PWM, SHA, TRNG, WDT
Supplier Device Package: 100-LQFP (14x14)
Number of I/O: 78
DigiKey Programmable: Not Verified
auf Bestellung 500 Stücke:
Lieferzeit 10-14 Tag (e)
1+23.57 EUR
10+18.6 EUR
25+17.36 EUR
100+15.99 EUR
250+15.34 EUR
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CYT2B94CACQ0AZSGST Infineon Technologies Infineon-CYT2B9_Datasheet_32-bit_Arm_Cortex-M4F_Microcontroller_TRAVEO_T2G_Family-AdditionalTechnicalInformation-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee9c191729c Description: IC MCU 32BT 2.0625MB FLSH 80LQFP
Packaging: Tape & Reel (TR)
Package / Case: 80-LQFP
Mounting Type: Surface Mount
Speed: 100MHz, 160MHz
Program Memory Size: 2.0625MB (2.0625M x 8)
RAM Size: 256K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
Data Converters: A/D 52x12b SAR
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, FIFO, I²C, IrDA, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, LVD, POR, PWM, SHA, TRNG, WDT
Supplier Device Package: 80-LQFP (12x12)
Number of I/O: 63
DigiKey Programmable: Not Verified
auf Bestellung 500 Stücke:
Lieferzeit 10-14 Tag (e)
500+17.79 EUR
Mindestbestellmenge: 500
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CYT2B94CACQ0AZSGST Infineon Technologies Infineon-CYT2B9_Datasheet_32-bit_Arm_Cortex-M4F_Microcontroller_TRAVEO_T2G_Family-AdditionalTechnicalInformation-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee9c191729c Description: IC MCU 32BT 2.0625MB FLSH 80LQFP
Packaging: Cut Tape (CT)
Package / Case: 80-LQFP
Mounting Type: Surface Mount
Speed: 100MHz, 160MHz
Program Memory Size: 2.0625MB (2.0625M x 8)
RAM Size: 256K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
Data Converters: A/D 52x12b SAR
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, FIFO, I²C, IrDA, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, LVD, POR, PWM, SHA, TRNG, WDT
Supplier Device Package: 80-LQFP (12x12)
Number of I/O: 63
DigiKey Programmable: Not Verified
auf Bestellung 500 Stücke:
Lieferzeit 10-14 Tag (e)
1+25.77 EUR
10+23.68 EUR
25+22.7 EUR
100+20 EUR
250+19.02 EUR
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CYT2B95CACQ0AZSGST CYT2B95CACQ0AZSGST Infineon Technologies Infineon-CYT2B9_Datasheet_32-bit_Arm_Cortex-M4F_Microcontroller_TRAVEO_T2G_Family-AdditionalTechnicalInformation-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee9c191729c Description: IC MCU 32BT 2.0625MB FLSH 100QFP
Packaging: Tape & Reel (TR)
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 100MHz, 160MHz
Program Memory Size: 2.0625MB (2.0625M x 8)
RAM Size: 256K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
Data Converters: A/D 57x12b SAR
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, FIFO, I2C, IrDA, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, LVD, POR, PWM, SHA, TRNG, WDT
Supplier Device Package: 100-LQFP (14x14)
Number of I/O: 78
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CYT2B95CACQ0AZSGST CYT2B95CACQ0AZSGST Infineon Technologies Infineon-CYT2B9_Datasheet_32-bit_Arm_Cortex-M4F_Microcontroller_TRAVEO_T2G_Family-AdditionalTechnicalInformation-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee9c191729c Description: IC MCU 32BT 2.0625MB FLSH 100QFP
Packaging: Cut Tape (CT)
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 100MHz, 160MHz
Program Memory Size: 2.0625MB (2.0625M x 8)
RAM Size: 256K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
Data Converters: A/D 57x12b SAR
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, FIFO, I2C, IrDA, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, LVD, POR, PWM, SHA, TRNG, WDT
Supplier Device Package: 100-LQFP (14x14)
Number of I/O: 78
DigiKey Programmable: Not Verified
auf Bestellung 388 Stücke:
Lieferzeit 10-14 Tag (e)
1+23.71 EUR
10+18.76 EUR
25+17.53 EUR
100+16.17 EUR
250+15.52 EUR
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CYT2BL3CAAQ0AZSGST CYT2BL3CAAQ0AZSGST Infineon Technologies Infineon-TRAVEO_2G_CY2BL-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c82ce566401836c4d5e9a46c8 Description: IC MCU 32BIT 4.063MB FLSH 64LQFP
Packaging: Cut Tape (CT)
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 100MHz, 160MHz
Program Memory Size: 4.063MB (4.063M x 8)
RAM Size: 512K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
Data Converters: A/D 45x12b SAR
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, FIFO, I2C, IrDA, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, LVD, POR, PWM, SHA, TRNG, WDT
Supplier Device Package: 64-LQFP (10x10)
Number of I/O: 49
DigiKey Programmable: Not Verified
auf Bestellung 1440 Stücke:
Lieferzeit 10-14 Tag (e)
1+24.64 EUR
10+19.53 EUR
25+18.26 EUR
100+16.86 EUR
250+16.19 EUR
500+15.79 EUR
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CYT2B95BACQ0AZSGS Infineon Technologies Infineon-CYT2B9_Datasheet_32-bit_Arm_Cortex-M4F_Microcontroller_TRAVEO_T2G_Family-AdditionalTechnicalInformation-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee9c191729c Description: IC MCU 32BT 2.0625MB FLSH 100QFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 100MHz, 160MHz
Program Memory Size: 2.0625MB (2.0625M x 8)
RAM Size: 256K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
Data Converters: A/D 57x12b SAR
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, FIFO, I²C, IrDA, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, LVD, POR, PWM, SHA, TRNG, WDT
Supplier Device Package: 100-LQFP (14x14)
Number of I/O: 78
DigiKey Programmable: Not Verified
auf Bestellung 900 Stücke:
Lieferzeit 10-14 Tag (e)
1+25.06 EUR
10+23.03 EUR
25+22.08 EUR
90+19.45 EUR
270+18.49 EUR
450+17.3 EUR
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CYT2B94CACQ0AZSGS Infineon Technologies Infineon-CYT2B9_Datasheet_32-bit_Arm_Cortex-M4F_Microcontroller_TRAVEO_T2G_Family-AdditionalTechnicalInformation-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee9c191729c Description: IC MCU 32BT 2.0625MB FLSH 80LQFP
Packaging: Tray
Package / Case: 80-LQFP
Mounting Type: Surface Mount
Speed: 100MHz, 160MHz
Program Memory Size: 2.0625MB (2.0625M x 8)
RAM Size: 256K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
Data Converters: A/D 52x12b SAR
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, FIFO, I²C, IrDA, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, LVD, POR, PWM, SHA, TRNG, WDT
Supplier Device Package: 80-LQFP (12x12)
Number of I/O: 63
DigiKey Programmable: Not Verified
auf Bestellung 1190 Stücke:
Lieferzeit 10-14 Tag (e)
1+26.75 EUR
10+24.59 EUR
25+23.57 EUR
119+20.77 EUR
238+19.75 EUR
476+18.47 EUR
952+16.94 EUR
Im Einkaufswagen  Stück im Wert von  UAH
CYT2B95CACQ0AZSGS Infineon Technologies Infineon-CYT2B9_Datasheet_32-bit_Arm_Cortex-M4F_Microcontroller_TRAVEO_T2G_Family-AdditionalTechnicalInformation-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee9c191729c Description: IC MCU 32BT 2.0625MB FLSH 100QFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 100MHz, 160MHz
Program Memory Size: 2.0625MB (2.0625M x 8)
RAM Size: 256K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
Data Converters: A/D 57x12b SAR
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, FIFO, I²C, IrDA, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, LVD, POR, PWM, SHA, TRNG, WDT
Supplier Device Package: 100-LQFP (14x14)
Number of I/O: 78
DigiKey Programmable: Not Verified
auf Bestellung 900 Stücke:
Lieferzeit 10-14 Tag (e)
1+27.68 EUR
10+25.45 EUR
25+24.39 EUR
90+21.49 EUR
270+20.44 EUR
450+19.12 EUR
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CYAT817AZS61-3A002 CYAT817AZS61-3A002 Infineon Technologies Infineon-CYAT817X_PSoC_Automotive_Multitouch_Generation_7XL-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8386267f018395a226012cc4 Description: PSOC BASED - TRUETOUCH
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Interface: I2C, SPI
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.71V ~ 1.95V, 3V ~ 5.5V
Supplier Device Package: 100-TQFP (14x14)
Touchscreen: 2 Wire Capacitive
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 810 Stücke:
Lieferzeit 10-14 Tag (e)
1+47.29 EUR
10+43.61 EUR
25+41.65 EUR
90+37.24 EUR
270+35.52 EUR
450+33.81 EUR
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FZ1500R33HE3C1BPSA1 Infineon Technologies infineon-fz1500r33he3-datasheet-en-09018a9080013597.pdf Description: IGBT MOD 3300V 1500A AG-IHVB190
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 1.5kA
NTC Thermistor: No
Supplier Device Package: AG-IHVB190
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 1500 A
Voltage - Collector Emitter Breakdown (Max): 3300 V
Power - Max: 2400000 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 280 nF @ 25 V
Produkt ist nicht verfügbar
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IRF7811AVTRPBF IRF7811AVTRPBF Infineon Technologies irf7811avpbf.pdf?fileId=5546d462533600a40153560898001cf6 description Description: MOSFET N-CH 30V 10.8A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.8A (Ta)
Rds On (Max) @ Id, Vgs: 14mOhm @ 15A, 4.5V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1801 pF @ 10 V
Produkt ist nicht verfügbar
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IRF7811AVTRPBF IRF7811AVTRPBF Infineon Technologies irf7811avpbf.pdf?fileId=5546d462533600a40153560898001cf6 description Description: MOSFET N-CH 30V 10.8A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.8A (Ta)
Rds On (Max) @ Id, Vgs: 14mOhm @ 15A, 4.5V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1801 pF @ 10 V
Produkt ist nicht verfügbar
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PASCO2V11BUMA1 Infineon Technologies Description: SENSOR ENVIRONMENTAL
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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AIMBG75R140M1HXTMA1 Infineon Technologies Infineon-AIMBG75R140M1H-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c8b6555fe018bae4dadd27ee2 Description: IGBT
Packaging: Tape & Reel (TR)
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
1000+4.48 EUR
Mindestbestellmenge: 1000
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AIMBG75R140M1HXTMA1 Infineon Technologies Infineon-AIMBG75R140M1H-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c8b6555fe018bae4dadd27ee2 Description: IGBT
Packaging: Cut Tape (CT)
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
2+11.02 EUR
10+7.44 EUR
100+5.41 EUR
500+4.54 EUR
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AIMDQ75R140M1HXUMA1 Infineon Technologies Infineon-AIMDQ75R140M1H-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c8afe5bd0018b60e0f8e8217f Description: IGBT
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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AIMDQ75R140M1HXUMA1 Infineon Technologies Infineon-AIMDQ75R140M1H-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c8afe5bd0018b60e0f8e8217f Description: IGBT
Packaging: Cut Tape (CT)
auf Bestellung 724 Stücke:
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2+11.32 EUR
10+7.65 EUR
100+5.57 EUR
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AIMZA75R140M1HXKSA1 AIMZA75R140M1HXKSA1 Infineon Technologies Infineon-AIMZA75R140M1H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8d2fe47b018dc6acbb010e90 Description: IGBT
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tj)
Rds On (Max) @ Id, Vgs: 129mOhm @ 4.7A, 20V
Power Dissipation (Max): 86W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 1.7mA
Supplier Device Package: PG-TO247-4
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 351 pF @ 500 V
Qualification: AEC-Q101
auf Bestellung 230 Stücke:
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2+11.95 EUR
30+6.92 EUR
120+5.81 EUR
Mindestbestellmenge: 2
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S99-50593 Infineon Technologies Description: INFINEON
Packaging: Bulk
Produkt ist nicht verfügbar
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ESD111B1W0201E6327XTSA1 ESD111B1W0201E6327XTSA1 Infineon Technologies Infineon-ESD111-B1-W0201-DataSheet-v01_00-EN.pdf?fileId=5546d46278d64ffd01790db1840a47f3 Description: TVS DIODE 5.5VWM 11VC PGWLL23
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TA)
Applications: General Purpose
Capacitance @ Frequency: 0.12pF @ 2.5GHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: PG-WLL-2-3
Bidirectional Channels: 1
Voltage - Clamping (Max) @ Ipp: 11V (Typ)
Power - Peak Pulse: 22W
Power Line Protection: No
Produkt ist nicht verfügbar
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ESD111B1W0201E6327XTSA1 ESD111B1W0201E6327XTSA1 Infineon Technologies Infineon-ESD111-B1-W0201-DataSheet-v01_00-EN.pdf?fileId=5546d46278d64ffd01790db1840a47f3 Description: TVS DIODE 5.5VWM 11VC PGWLL23
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TA)
Applications: General Purpose
Capacitance @ Frequency: 0.12pF @ 2.5GHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: PG-WLL-2-3
Bidirectional Channels: 1
Voltage - Clamping (Max) @ Ipp: 11V (Typ)
Power - Peak Pulse: 22W
Power Line Protection: No
auf Bestellung 14900 Stücke:
Lieferzeit 10-14 Tag (e)
59+0.3 EUR
88+0.2 EUR
187+0.094 EUR
500+0.088 EUR
1000+0.079 EUR
2000+0.077 EUR
5000+0.074 EUR
Mindestbestellmenge: 59
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ESD113B102ELE6327XTMA1 ESD113B102ELE6327XTMA1 Infineon Technologies Infineon-ESD113-B1Series-DS-v01_02-EN.pdf?fileId=5546d4614815da88014864b5329e1de7 Description: TVS DIODE 3.6VWM 8V PGTSLP220
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: HDMI
Capacitance @ Frequency: 0.2pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.6V (Max)
Supplier Device Package: PG-TSLP-2-20
Bidirectional Channels: 1
Voltage - Breakdown (Min): 4V
Voltage - Clamping (Max) @ Ipp: 8V
Power - Peak Pulse: 36W
Power Line Protection: No
Produkt ist nicht verfügbar
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PVT322APBF PVT322APBF Infineon Technologies IRSD-S-A0001022139-1.pdf?t.download=true&u=5oefqw Description: SSR RELAY SPST-NO 170MA 0-250V
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Through Hole
Voltage - Input: 1.2VDC
Circuit: SPST-NO (1 Form A) x 2
Operating Temperature: -40°C ~ 85°C
Termination Style: PC Pin
Load Current: 170 mA
Approval Agency: UL
Supplier Device Package: 8-DIP
Voltage - Load: 0 V ~ 250 V
On-State Resistance (Max): 8 Ohms
Produkt ist nicht verfügbar
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IQDH45N04LM6ATMA1 IQDH45N04LM6ATMA1 Infineon Technologies Infineon-IQDH45N04LM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8a44f57b018a45a2d3240298 Description: TRENCH <= 40V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Ta), 637A (Tc)
Rds On (Max) @ Id, Vgs: 0.45mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 333W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 1.449mA
Supplier Device Package: PG-TSON-8-9
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 172 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 20 V
Produkt ist nicht verfügbar
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IQDH45N04LM6ATMA1 IQDH45N04LM6ATMA1 Infineon Technologies Infineon-IQDH45N04LM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8a44f57b018a45a2d3240298 Description: TRENCH <= 40V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Ta), 637A (Tc)
Rds On (Max) @ Id, Vgs: 0.45mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 333W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 1.449mA
Supplier Device Package: PG-TSON-8-9
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 172 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 20 V
auf Bestellung 4610 Stücke:
Lieferzeit 10-14 Tag (e)
3+6.21 EUR
10+4.37 EUR
100+3.14 EUR
500+2.9 EUR
Mindestbestellmenge: 3
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PEF2235NV4.1-IPAT Infineon Technologies Description: ISDN PRIMARY ACCESS TRANSCEICER
Packaging: Bulk
auf Bestellung 2390 Stücke:
Lieferzeit 10-14 Tag (e)
19+27.02 EUR
Mindestbestellmenge: 19
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PEF2235NV4.1 Infineon Technologies Description: ISDN PRIMARY ACCESS TRANSCEICER
Packaging: Bulk
auf Bestellung 170 Stücke:
Lieferzeit 10-14 Tag (e)
19+27.02 EUR
Mindestbestellmenge: 19
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PEF22553HTV2.1 Infineon Technologies Description: LANTIQ PEF22553 TELECOMS IC
Packaging: Bulk
auf Bestellung 660 Stücke:
Lieferzeit 10-14 Tag (e)
8+67.84 EUR
Mindestbestellmenge: 8
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ESD157B1W01005E6327XTSA1 Infineon-ESD157-B1-W01005-DataSheet-v01_02-EN.pdf?fileId=8ac78c8c85ecb3470185eea133f700a3
ESD157B1W01005E6327XTSA1
Hersteller: Infineon Technologies
Description: TVS DIODE 3.3VWM 3.6V SGWLL22
Packaging: Cut Tape (CT)
Package / Case: 01005 (0402 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TA)
Applications: HDMI, USB
Capacitance @ Frequency: 0.17pF @ 10GHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: SG-WLL-2-2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.9V
Voltage - Clamping (Max) @ Ipp: 3.6V (Typ)
Power - Peak Pulse: 7.2W
Power Line Protection: No
auf Bestellung 12167 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
77+0.23 EUR
129+0.14 EUR
237+0.074 EUR
500+0.061 EUR
1000+0.044 EUR
2000+0.043 EUR
5000+0.035 EUR
Mindestbestellmenge: 77
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ESD156B1W0201E6327XTSA1 Infineon-ESD156-B1-W0201-DataSheet-v01_02-EN.pdf?fileId=8ac78c8c85ecb3470185eea129d200a0
ESD156B1W0201E6327XTSA1
Hersteller: Infineon Technologies
Description: TVS DIODE 3.6VWM 3.5V SGWLL23
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TA)
Applications: HDMI, USB
Capacitance @ Frequency: 0.19pF @ 10GHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.6V (Max)
Supplier Device Package: SG-WLL-2-3
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.9V
Voltage - Clamping (Max) @ Ipp: 3.5V (Typ)
Power - Peak Pulse: 7W
Power Line Protection: No
Produkt ist nicht verfügbar
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ESD156B1W0201E6327XTSA1 Infineon-ESD156-B1-W0201-DataSheet-v01_02-EN.pdf?fileId=8ac78c8c85ecb3470185eea129d200a0
ESD156B1W0201E6327XTSA1
Hersteller: Infineon Technologies
Description: TVS DIODE 3.6VWM 3.5V SGWLL23
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TA)
Applications: HDMI, USB
Capacitance @ Frequency: 0.19pF @ 10GHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.6V (Max)
Supplier Device Package: SG-WLL-2-3
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.9V
Voltage - Clamping (Max) @ Ipp: 3.5V (Typ)
Power - Peak Pulse: 7W
Power Line Protection: No
auf Bestellung 8952 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
77+0.23 EUR
117+0.15 EUR
179+0.099 EUR
500+0.068 EUR
1000+0.046 EUR
2000+0.044 EUR
5000+0.043 EUR
Mindestbestellmenge: 77
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ESD151B1W0201E6327XTSA1 Infineon-ESD151-B1-W0201-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8b6555fe018c0fddfad27743
ESD151B1W0201E6327XTSA1
Hersteller: Infineon Technologies
Description: TVS DIODE 3.3VWM 3.5V SGWLL23
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TA)
Applications: HDMI, USB
Capacitance @ Frequency: 0.08pF @ 10GHz
Current - Peak Pulse (10/1000µs): 1A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: SG-WLL-2-3
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.9V
Voltage - Clamping (Max) @ Ipp: 3.5V (Typ)
Power - Peak Pulse: 3.5W
Power Line Protection: No
Produkt ist nicht verfügbar
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ESD151B1W0201E6327XTSA1 Infineon-ESD151-B1-W0201-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8b6555fe018c0fddfad27743
ESD151B1W0201E6327XTSA1
Hersteller: Infineon Technologies
Description: TVS DIODE 3.3VWM 3.5V SGWLL23
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TA)
Applications: HDMI, USB
Capacitance @ Frequency: 0.08pF @ 10GHz
Current - Peak Pulse (10/1000µs): 1A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: SG-WLL-2-3
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.9V
Voltage - Clamping (Max) @ Ipp: 3.5V (Typ)
Power - Peak Pulse: 3.5W
Power Line Protection: No
auf Bestellung 520 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
67+0.26 EUR
105+0.17 EUR
179+0.099 EUR
500+0.074 EUR
Mindestbestellmenge: 67
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ESD155B2W0201E6327XTSA1 Infineon-ESD155-B2-W0201-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c85ecb3470185eea11ea9009d
ESD155B2W0201E6327XTSA1
Hersteller: Infineon Technologies
Description: TVS DIODE 3.3VWM 3.5V SGWLL31
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TA)
Applications: HDMI, USB
Capacitance @ Frequency: 0.18pF @ 10GHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: SG-WLL-3-1
Bidirectional Channels: 2
Voltage - Breakdown (Min): 5.9V
Voltage - Clamping (Max) @ Ipp: 3.5V (Typ)
Power - Peak Pulse: 7W
Power Line Protection: No
Produkt ist nicht verfügbar
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ESD155B2W0201E6327XTSA1 Infineon-ESD155-B2-W0201-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c85ecb3470185eea11ea9009d
ESD155B2W0201E6327XTSA1
Hersteller: Infineon Technologies
Description: TVS DIODE 3.3VWM 3.5V SGWLL31
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TA)
Applications: HDMI, USB
Capacitance @ Frequency: 0.18pF @ 10GHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: SG-WLL-3-1
Bidirectional Channels: 2
Voltage - Breakdown (Min): 5.9V
Voltage - Clamping (Max) @ Ipp: 3.5V (Typ)
Power - Peak Pulse: 7W
Power Line Protection: No
auf Bestellung 11825 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
53+0.33 EUR
87+0.2 EUR
140+0.13 EUR
500+0.092 EUR
1000+0.081 EUR
2000+0.072 EUR
5000+0.062 EUR
Mindestbestellmenge: 53
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CY7C1020D-10ZSXI download
CY7C1020D-10ZSXI
Hersteller: Infineon Technologies
Description: IC SRAM 512KBIT PAR 44TSOP II
Packaging: Tray
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 512Kbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 32K x 16
DigiKey Programmable: Not Verified
auf Bestellung 515 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+9.94 EUR
10+9.08 EUR
25+8.91 EUR
40+8.84 EUR
135+7.94 EUR
270+7.91 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
AUIRLS3034-7TRL auirls3034-7p.pdf?fileId=5546d462533600a4015355bec2b41586
AUIRLS3034-7TRL
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 240A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 200A, 10V
Power Dissipation (Max): 380W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: D2PAK (7-Lead)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 10990 pF @ 40 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPZA65R018CFD7XKSA1 Infineon-IPZA65R018CFD7-DataSheet-v02_00-EN.pdf?fileId=5546d4627572d8fd01758f0d89607bbf
IPZA65R018CFD7XKSA1
Hersteller: Infineon Technologies
Description: HIGH POWER_NEW
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 106A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 58.2A, 10V
Power Dissipation (Max): 446W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 2.91mA
Supplier Device Package: PG-TO247-4-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 234 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11660 pF @ 400 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPDQ65R017CFD7AXTMA1 Infineon-IPDQ65R017CFD7A-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c869190210186cb76d75333a8
IPDQ65R017CFD7AXTMA1
Hersteller: Infineon Technologies
Description: AUTOMOTIVE_COOLMOS
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 136A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 61.6A, 10V
Power Dissipation (Max): 694W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 3.08mA
Supplier Device Package: PG-HDSOP-22-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 236 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12338 pF @ 400 V
Qualification: AEC-Q101
auf Bestellung 131 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+24.78 EUR
10+19.65 EUR
25+18.37 EUR
100+16.96 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IPDQ65R029CFD7AXTMA1 Infineon-IPDQ65R029CFD7A-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c869190210186cb76e6ef33ab
IPDQ65R029CFD7AXTMA1
Hersteller: Infineon Technologies
Description: AUTOMOTIVE_COOLMOS
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 35.8A, 10V
Power Dissipation (Max): 463W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.79mA
Supplier Device Package: PG-HDSOP-22-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 139 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7149 pF @ 400 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPDQ65R029CFD7AXTMA1 Infineon-IPDQ65R029CFD7A-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c869190210186cb76e6ef33ab
IPDQ65R029CFD7AXTMA1
Hersteller: Infineon Technologies
Description: AUTOMOTIVE_COOLMOS
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 35.8A, 10V
Power Dissipation (Max): 463W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.79mA
Supplier Device Package: PG-HDSOP-22-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 139 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7149 pF @ 400 V
Qualification: AEC-Q101
auf Bestellung 728 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+16.21 EUR
10+12.67 EUR
25+11.78 EUR
100+10.82 EUR
250+10.35 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
IQE004NE1LM7CGATMA1 Infineon-IQE004NE1LM7CG-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8ada5435018ae4c205bf478b
IQE004NE1LM7CGATMA1
Hersteller: Infineon Technologies
Description: TRENCH <= 40V
Packaging: Tape & Reel (TR)
Package / Case: 9-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Ta), 379A (Tc)
Rds On (Max) @ Id, Vgs: 0.45mOhm @ 30A, 7V
Power Dissipation (Max): 2.1W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2V @ 432µA
Supplier Device Package: PG-TTFN-9-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V
Vgs (Max): ±7V
Drain to Source Voltage (Vdss): 15 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 7 V
Input Capacitance (Ciss) (Max) @ Vds: 6240 pF @ 7.5 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+1.77 EUR
Mindestbestellmenge: 5000
Im Einkaufswagen  Stück im Wert von  UAH
IQE004NE1LM7CGATMA1 Infineon-IQE004NE1LM7CG-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8ada5435018ae4c205bf478b
IQE004NE1LM7CGATMA1
Hersteller: Infineon Technologies
Description: TRENCH <= 40V
Packaging: Cut Tape (CT)
Package / Case: 9-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Ta), 379A (Tc)
Rds On (Max) @ Id, Vgs: 0.45mOhm @ 30A, 7V
Power Dissipation (Max): 2.1W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2V @ 432µA
Supplier Device Package: PG-TTFN-9-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V
Vgs (Max): ±7V
Drain to Source Voltage (Vdss): 15 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 7 V
Input Capacitance (Ciss) (Max) @ Vds: 6240 pF @ 7.5 V
auf Bestellung 9980 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+4.07 EUR
10+3.38 EUR
100+2.69 EUR
500+2.28 EUR
1000+1.93 EUR
2000+1.83 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
IQE004NE1LM7ATMA1
Hersteller: Infineon Technologies
Description: TRENCH <= 40V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Ta), 379A (Tc)
Rds On (Max) @ Id, Vgs: 0.45mOhm @ 30A, 7V
Power Dissipation (Max): 2.1W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2V @ 432µA
Supplier Device Package: PG-TSON-8-5
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V
Vgs (Max): ±7V
Drain to Source Voltage (Vdss): 15 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 7 V
Input Capacitance (Ciss) (Max) @ Vds: 6240 pF @ 7.5 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+1.81 EUR
Mindestbestellmenge: 5000
Im Einkaufswagen  Stück im Wert von  UAH
IQE004NE1LM7ATMA1
Hersteller: Infineon Technologies
Description: TRENCH <= 40V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Ta), 379A (Tc)
Rds On (Max) @ Id, Vgs: 0.45mOhm @ 30A, 7V
Power Dissipation (Max): 2.1W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2V @ 432µA
Supplier Device Package: PG-TSON-8-5
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V
Vgs (Max): ±7V
Drain to Source Voltage (Vdss): 15 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 7 V
Input Capacitance (Ciss) (Max) @ Vds: 6240 pF @ 7.5 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+4.17 EUR
10+3.47 EUR
100+2.76 EUR
500+2.33 EUR
1000+1.98 EUR
2000+1.88 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
IQE004NE1LM7CGSCATMA1 Infineon-IQE004NE1LM7CGSC-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8ada5435018ae4c1f8664788
IQE004NE1LM7CGSCATMA1
Hersteller: Infineon Technologies
Description: TRENCH <= 40V
Packaging: Tape & Reel (TR)
Package / Case: 9-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Ta), 379A (Tc)
Rds On (Max) @ Id, Vgs: 0.45mOhm @ 30A, 7V
Power Dissipation (Max): 2.1W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2V @ 432µA
Supplier Device Package: PG-WHTFN-9
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V
Vgs (Max): ±7V
Drain to Source Voltage (Vdss): 15 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 7 V
Input Capacitance (Ciss) (Max) @ Vds: 6240 pF @ 7.5 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IQE004NE1LM7CGSCATMA1 Infineon-IQE004NE1LM7CGSC-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8ada5435018ae4c1f8664788
IQE004NE1LM7CGSCATMA1
Hersteller: Infineon Technologies
Description: TRENCH <= 40V
Packaging: Cut Tape (CT)
Package / Case: 9-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Ta), 379A (Tc)
Rds On (Max) @ Id, Vgs: 0.45mOhm @ 30A, 7V
Power Dissipation (Max): 2.1W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2V @ 432µA
Supplier Device Package: PG-WHTFN-9
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V
Vgs (Max): ±7V
Drain to Source Voltage (Vdss): 15 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 7 V
Input Capacitance (Ciss) (Max) @ Vds: 6240 pF @ 7.5 V
auf Bestellung 5264 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.44 EUR
10+2.88 EUR
100+1.99 EUR
500+1.65 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
IQE004NE1LM7SCATMA1 Infineon-IQE004NE1LM7SC-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8ada5435018ae246370f63e0
IQE004NE1LM7SCATMA1
Hersteller: Infineon Technologies
Description: TRENCH <= 40V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Ta), 379A (Tc)
Rds On (Max) @ Id, Vgs: 0.45mOhm @ 30A, 7V
Power Dissipation (Max): 2.1W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2V @ 432µA
Supplier Device Package: PG-WHSON-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V
Vgs (Max): ±7V
Drain to Source Voltage (Vdss): 15 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 7 V
Input Capacitance (Ciss) (Max) @ Vds: 6240 pF @ 7.5 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6000+1.37 EUR
Mindestbestellmenge: 6000
Im Einkaufswagen  Stück im Wert von  UAH
IQE004NE1LM7SCATMA1 Infineon-IQE004NE1LM7SC-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8ada5435018ae246370f63e0
IQE004NE1LM7SCATMA1
Hersteller: Infineon Technologies
Description: TRENCH <= 40V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Ta), 379A (Tc)
Rds On (Max) @ Id, Vgs: 0.45mOhm @ 30A, 7V
Power Dissipation (Max): 2.1W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2V @ 432µA
Supplier Device Package: PG-WHSON-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V
Vgs (Max): ±7V
Drain to Source Voltage (Vdss): 15 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 7 V
Input Capacitance (Ciss) (Max) @ Vds: 6240 pF @ 7.5 V
auf Bestellung 10543 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.56 EUR
10+2.59 EUR
100+1.96 EUR
500+1.67 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
IGC54T65R3QEX1SA1 Infineon-IGC54T65R3QE_L7584E-DS-v01_01-en.pdf?fileId=db3a30433b47825b013b6ae660a31d73
IGC54T65R3QEX1SA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 650V 100A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.22V @ 15V, 100A
Supplier Device Package: Die
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 300 A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29GL512S11TFI010 Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai
S29GL512S11TFI010
Hersteller: Infineon Technologies
Description: IC FLASH 512MBIT PARALLEL 56TSOP
Packaging: Tray
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 32M x 16
DigiKey Programmable: Verified
auf Bestellung 517 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+16.1 EUR
10+14.91 EUR
25+14.57 EUR
40+14.49 EUR
91+12.76 EUR
273+12.13 EUR
455+12 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
S29GL128P90FFIR20 128_Mbit_3_V_Page_Flash_with_90_nm_MirrorBit_Process_Technology-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed7850458a5&utm_source=cypress&utm_medium=ref
S29GL128P90FFIR20
Hersteller: Infineon Technologies
Description: IC FLASH 128MBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Write Cycle Time - Word, Page: 90ns
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 16M x 8
DigiKey Programmable: Verified
auf Bestellung 807 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+10.4 EUR
10+9.68 EUR
25+9.39 EUR
50+9.17 EUR
180+8.76 EUR
360+8.54 EUR
540+8.41 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
ISC035N10NM5LFATMA1
ISC035N10NM5LFATMA1
Hersteller: Infineon Technologies
Description: OPTIMOSTM5LINEARFET100V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 164A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 217W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 115µA
Supplier Device Package: PG-TDSON-8 FL
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 50 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
ISC035N10NM5LFATMA1
ISC035N10NM5LFATMA1
Hersteller: Infineon Technologies
Description: OPTIMOSTM5LINEARFET100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 164A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 217W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 115µA
Supplier Device Package: PG-TDSON-8 FL
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 50 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
REFICC80QSG84W3BPATOBO1 Infineon-ICC80QSG-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c80027ecd0180b1cf85f62eaa
REFICC80QSG84W3BPATOBO1
Hersteller: Infineon Technologies
Description: REF FOR POWER TOOL BATTERY CHARG
Packaging: Bulk
Function: Battery Charger
Type: Power Management
Utilized IC / Part: ICC80QSG, IPN70R450P7S
Supplied Contents: Board(s)
Primary Attributes: 110 ~ 230 VAC Input Voltage
Embedded: No
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+174.91 EUR
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2EDN8523RXTMA1 Infineon-2EDN752x-2EDN852x-DS--DS-v02_05-EN.pdf?fileId=5546d462525dbac40152abcc7dbb1727
2EDN8523RXTMA1
Hersteller: Infineon Technologies
Description: IC GATE DRVR LOW-SIDE 8TSSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 20V
Input Type: Non-Inverting
Supplier Device Package: PG-TSSOP-8
Rise / Fall Time (Typ): 5.3ns, 4.5ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 1.1V, 1.98V
Current - Peak Output (Source, Sink): 5A, 5A
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY7C652148-24LTXIT Infineon-CY7C652148-24LTXIT-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eea27217302
CY7C652148-24LTXIT
Hersteller: Infineon Technologies
Description: USB Full-Speed Peripherals
Packaging: Cut Tape (CT)
Package / Case: 24-UFQFN Exposed Pad
Function: Bridge
Interface: GPIO, SPI
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.71V ~ 1.89V, 2V ~ 3.45V, 3.15V ~ 5.25V, 4.35V ~ 5.5V
Current - Supply: 20mA
Protocol: USB
Standards: USB 2.0
Supplier Device Package: 24-QFN (4x4)
DigiKey Programmable: Not Verified
auf Bestellung 2217 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.66 EUR
10+3.5 EUR
25+3.21 EUR
100+2.88 EUR
250+2.73 EUR
500+2.64 EUR
1000+2.56 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
CY7C65223-24LTXIT Infineon-CY7C65223-24LTXIT-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eea23ff72fe
CY7C65223-24LTXIT
Hersteller: Infineon Technologies
Description: USB Full-Speed Peripherals
Packaging: Cut Tape (CT)
Package / Case: 24-UFQFN Exposed Pad
Function: Bridge
Interface: GPIO, UART
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.71V ~ 1.89V, 2V ~ 3.45V, 3.15V ~ 5.25V, 4.35V ~ 5.5V
Current - Supply: 20mA
Protocol: USB
Standards: USB 2.0
Supplier Device Package: 24-QFN (4x4)
DigiKey Programmable: Not Verified
auf Bestellung 1393 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.98 EUR
10+3.74 EUR
25+3.42 EUR
100+3.08 EUR
250+2.92 EUR
500+2.82 EUR
1000+2.74 EUR
Mindestbestellmenge: 4
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CYT2B95BACQ0AZSGST Infineon-CYT2B9_Datasheet_32-bit_Arm_Cortex-M4F_Microcontroller_TRAVEO_T2G_Family-AdditionalTechnicalInformation-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee9c191729c
CYT2B95BACQ0AZSGST
Hersteller: Infineon Technologies
Description: IC MCU 32BT 2.0625MB FLSH 100QFP
Packaging: Tape & Reel (TR)
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 100MHz, 160MHz
Program Memory Size: 2.0625MB (2.0625M x 8)
RAM Size: 256K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
Data Converters: A/D 57x12b SAR
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, FIFO, I2C, IrDA, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, LVD, POR, PWM, SHA, TRNG, WDT
Supplier Device Package: 100-LQFP (14x14)
Number of I/O: 78
DigiKey Programmable: Not Verified
auf Bestellung 500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
500+13.44 EUR
Mindestbestellmenge: 500
Im Einkaufswagen  Stück im Wert von  UAH
CYT2B95BACQ0AZSGST Infineon-CYT2B9_Datasheet_32-bit_Arm_Cortex-M4F_Microcontroller_TRAVEO_T2G_Family-AdditionalTechnicalInformation-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee9c191729c
CYT2B95BACQ0AZSGST
Hersteller: Infineon Technologies
Description: IC MCU 32BT 2.0625MB FLSH 100QFP
Packaging: Cut Tape (CT)
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 100MHz, 160MHz
Program Memory Size: 2.0625MB (2.0625M x 8)
RAM Size: 256K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
Data Converters: A/D 57x12b SAR
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, FIFO, I2C, IrDA, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, LVD, POR, PWM, SHA, TRNG, WDT
Supplier Device Package: 100-LQFP (14x14)
Number of I/O: 78
DigiKey Programmable: Not Verified
auf Bestellung 500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+23.57 EUR
10+18.6 EUR
25+17.36 EUR
100+15.99 EUR
250+15.34 EUR
Im Einkaufswagen  Stück im Wert von  UAH
CYT2B94CACQ0AZSGST Infineon-CYT2B9_Datasheet_32-bit_Arm_Cortex-M4F_Microcontroller_TRAVEO_T2G_Family-AdditionalTechnicalInformation-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee9c191729c
Hersteller: Infineon Technologies
Description: IC MCU 32BT 2.0625MB FLSH 80LQFP
Packaging: Tape & Reel (TR)
Package / Case: 80-LQFP
Mounting Type: Surface Mount
Speed: 100MHz, 160MHz
Program Memory Size: 2.0625MB (2.0625M x 8)
RAM Size: 256K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
Data Converters: A/D 52x12b SAR
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, FIFO, I²C, IrDA, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, LVD, POR, PWM, SHA, TRNG, WDT
Supplier Device Package: 80-LQFP (12x12)
Number of I/O: 63
DigiKey Programmable: Not Verified
auf Bestellung 500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
500+17.79 EUR
Mindestbestellmenge: 500
Im Einkaufswagen  Stück im Wert von  UAH
CYT2B94CACQ0AZSGST Infineon-CYT2B9_Datasheet_32-bit_Arm_Cortex-M4F_Microcontroller_TRAVEO_T2G_Family-AdditionalTechnicalInformation-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee9c191729c
Hersteller: Infineon Technologies
Description: IC MCU 32BT 2.0625MB FLSH 80LQFP
Packaging: Cut Tape (CT)
Package / Case: 80-LQFP
Mounting Type: Surface Mount
Speed: 100MHz, 160MHz
Program Memory Size: 2.0625MB (2.0625M x 8)
RAM Size: 256K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
Data Converters: A/D 52x12b SAR
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, FIFO, I²C, IrDA, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, LVD, POR, PWM, SHA, TRNG, WDT
Supplier Device Package: 80-LQFP (12x12)
Number of I/O: 63
DigiKey Programmable: Not Verified
auf Bestellung 500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+25.77 EUR
10+23.68 EUR
25+22.7 EUR
100+20 EUR
250+19.02 EUR
Im Einkaufswagen  Stück im Wert von  UAH
CYT2B95CACQ0AZSGST Infineon-CYT2B9_Datasheet_32-bit_Arm_Cortex-M4F_Microcontroller_TRAVEO_T2G_Family-AdditionalTechnicalInformation-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee9c191729c
CYT2B95CACQ0AZSGST
Hersteller: Infineon Technologies
Description: IC MCU 32BT 2.0625MB FLSH 100QFP
Packaging: Tape & Reel (TR)
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 100MHz, 160MHz
Program Memory Size: 2.0625MB (2.0625M x 8)
RAM Size: 256K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
Data Converters: A/D 57x12b SAR
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, FIFO, I2C, IrDA, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, LVD, POR, PWM, SHA, TRNG, WDT
Supplier Device Package: 100-LQFP (14x14)
Number of I/O: 78
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CYT2B95CACQ0AZSGST Infineon-CYT2B9_Datasheet_32-bit_Arm_Cortex-M4F_Microcontroller_TRAVEO_T2G_Family-AdditionalTechnicalInformation-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee9c191729c
CYT2B95CACQ0AZSGST
Hersteller: Infineon Technologies
Description: IC MCU 32BT 2.0625MB FLSH 100QFP
Packaging: Cut Tape (CT)
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 100MHz, 160MHz
Program Memory Size: 2.0625MB (2.0625M x 8)
RAM Size: 256K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
Data Converters: A/D 57x12b SAR
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, FIFO, I2C, IrDA, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, LVD, POR, PWM, SHA, TRNG, WDT
Supplier Device Package: 100-LQFP (14x14)
Number of I/O: 78
DigiKey Programmable: Not Verified
auf Bestellung 388 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+23.71 EUR
10+18.76 EUR
25+17.53 EUR
100+16.17 EUR
250+15.52 EUR
Im Einkaufswagen  Stück im Wert von  UAH
CYT2BL3CAAQ0AZSGST Infineon-TRAVEO_2G_CY2BL-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c82ce566401836c4d5e9a46c8
CYT2BL3CAAQ0AZSGST
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 4.063MB FLSH 64LQFP
Packaging: Cut Tape (CT)
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 100MHz, 160MHz
Program Memory Size: 4.063MB (4.063M x 8)
RAM Size: 512K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
Data Converters: A/D 45x12b SAR
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, FIFO, I2C, IrDA, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, LVD, POR, PWM, SHA, TRNG, WDT
Supplier Device Package: 64-LQFP (10x10)
Number of I/O: 49
DigiKey Programmable: Not Verified
auf Bestellung 1440 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+24.64 EUR
10+19.53 EUR
25+18.26 EUR
100+16.86 EUR
250+16.19 EUR
500+15.79 EUR
Im Einkaufswagen  Stück im Wert von  UAH
CYT2B95BACQ0AZSGS Infineon-CYT2B9_Datasheet_32-bit_Arm_Cortex-M4F_Microcontroller_TRAVEO_T2G_Family-AdditionalTechnicalInformation-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee9c191729c
Hersteller: Infineon Technologies
Description: IC MCU 32BT 2.0625MB FLSH 100QFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 100MHz, 160MHz
Program Memory Size: 2.0625MB (2.0625M x 8)
RAM Size: 256K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
Data Converters: A/D 57x12b SAR
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, FIFO, I²C, IrDA, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, LVD, POR, PWM, SHA, TRNG, WDT
Supplier Device Package: 100-LQFP (14x14)
Number of I/O: 78
DigiKey Programmable: Not Verified
auf Bestellung 900 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+25.06 EUR
10+23.03 EUR
25+22.08 EUR
90+19.45 EUR
270+18.49 EUR
450+17.3 EUR
Im Einkaufswagen  Stück im Wert von  UAH
CYT2B94CACQ0AZSGS Infineon-CYT2B9_Datasheet_32-bit_Arm_Cortex-M4F_Microcontroller_TRAVEO_T2G_Family-AdditionalTechnicalInformation-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee9c191729c
Hersteller: Infineon Technologies
Description: IC MCU 32BT 2.0625MB FLSH 80LQFP
Packaging: Tray
Package / Case: 80-LQFP
Mounting Type: Surface Mount
Speed: 100MHz, 160MHz
Program Memory Size: 2.0625MB (2.0625M x 8)
RAM Size: 256K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
Data Converters: A/D 52x12b SAR
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, FIFO, I²C, IrDA, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, LVD, POR, PWM, SHA, TRNG, WDT
Supplier Device Package: 80-LQFP (12x12)
Number of I/O: 63
DigiKey Programmable: Not Verified
auf Bestellung 1190 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+26.75 EUR
10+24.59 EUR
25+23.57 EUR
119+20.77 EUR
238+19.75 EUR
476+18.47 EUR
952+16.94 EUR
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CYT2B95CACQ0AZSGS Infineon-CYT2B9_Datasheet_32-bit_Arm_Cortex-M4F_Microcontroller_TRAVEO_T2G_Family-AdditionalTechnicalInformation-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee9c191729c
Hersteller: Infineon Technologies
Description: IC MCU 32BT 2.0625MB FLSH 100QFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 100MHz, 160MHz
Program Memory Size: 2.0625MB (2.0625M x 8)
RAM Size: 256K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
Data Converters: A/D 57x12b SAR
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, FIFO, I²C, IrDA, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, LVD, POR, PWM, SHA, TRNG, WDT
Supplier Device Package: 100-LQFP (14x14)
Number of I/O: 78
DigiKey Programmable: Not Verified
auf Bestellung 900 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+27.68 EUR
10+25.45 EUR
25+24.39 EUR
90+21.49 EUR
270+20.44 EUR
450+19.12 EUR
Im Einkaufswagen  Stück im Wert von  UAH
CYAT817AZS61-3A002 Infineon-CYAT817X_PSoC_Automotive_Multitouch_Generation_7XL-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8386267f018395a226012cc4
CYAT817AZS61-3A002
Hersteller: Infineon Technologies
Description: PSOC BASED - TRUETOUCH
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Interface: I2C, SPI
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.71V ~ 1.95V, 3V ~ 5.5V
Supplier Device Package: 100-TQFP (14x14)
Touchscreen: 2 Wire Capacitive
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 810 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+47.29 EUR
10+43.61 EUR
25+41.65 EUR
90+37.24 EUR
270+35.52 EUR
450+33.81 EUR
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FZ1500R33HE3C1BPSA1 infineon-fz1500r33he3-datasheet-en-09018a9080013597.pdf
Hersteller: Infineon Technologies
Description: IGBT MOD 3300V 1500A AG-IHVB190
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 1.5kA
NTC Thermistor: No
Supplier Device Package: AG-IHVB190
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 1500 A
Voltage - Collector Emitter Breakdown (Max): 3300 V
Power - Max: 2400000 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 280 nF @ 25 V
Produkt ist nicht verfügbar
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IRF7811AVTRPBF description irf7811avpbf.pdf?fileId=5546d462533600a40153560898001cf6
IRF7811AVTRPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 10.8A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.8A (Ta)
Rds On (Max) @ Id, Vgs: 14mOhm @ 15A, 4.5V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1801 pF @ 10 V
Produkt ist nicht verfügbar
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IRF7811AVTRPBF description irf7811avpbf.pdf?fileId=5546d462533600a40153560898001cf6
IRF7811AVTRPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 10.8A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.8A (Ta)
Rds On (Max) @ Id, Vgs: 14mOhm @ 15A, 4.5V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1801 pF @ 10 V
Produkt ist nicht verfügbar
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PASCO2V11BUMA1
Hersteller: Infineon Technologies
Description: SENSOR ENVIRONMENTAL
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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AIMBG75R140M1HXTMA1 Infineon-AIMBG75R140M1H-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c8b6555fe018bae4dadd27ee2
Hersteller: Infineon Technologies
Description: IGBT
Packaging: Tape & Reel (TR)
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1000+4.48 EUR
Mindestbestellmenge: 1000
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AIMBG75R140M1HXTMA1 Infineon-AIMBG75R140M1H-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c8b6555fe018bae4dadd27ee2
Hersteller: Infineon Technologies
Description: IGBT
Packaging: Cut Tape (CT)
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+11.02 EUR
10+7.44 EUR
100+5.41 EUR
500+4.54 EUR
Mindestbestellmenge: 2
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AIMDQ75R140M1HXUMA1 Infineon-AIMDQ75R140M1H-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c8afe5bd0018b60e0f8e8217f
Hersteller: Infineon Technologies
Description: IGBT
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AIMDQ75R140M1HXUMA1 Infineon-AIMDQ75R140M1H-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c8afe5bd0018b60e0f8e8217f
Hersteller: Infineon Technologies
Description: IGBT
Packaging: Cut Tape (CT)
auf Bestellung 724 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+11.32 EUR
10+7.65 EUR
100+5.57 EUR
Mindestbestellmenge: 2
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AIMZA75R140M1HXKSA1 Infineon-AIMZA75R140M1H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8d2fe47b018dc6acbb010e90
AIMZA75R140M1HXKSA1
Hersteller: Infineon Technologies
Description: IGBT
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tj)
Rds On (Max) @ Id, Vgs: 129mOhm @ 4.7A, 20V
Power Dissipation (Max): 86W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 1.7mA
Supplier Device Package: PG-TO247-4
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 351 pF @ 500 V
Qualification: AEC-Q101
auf Bestellung 230 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+11.95 EUR
30+6.92 EUR
120+5.81 EUR
Mindestbestellmenge: 2
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S99-50593
Hersteller: Infineon Technologies
Description: INFINEON
Packaging: Bulk
Produkt ist nicht verfügbar
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ESD111B1W0201E6327XTSA1 Infineon-ESD111-B1-W0201-DataSheet-v01_00-EN.pdf?fileId=5546d46278d64ffd01790db1840a47f3
ESD111B1W0201E6327XTSA1
Hersteller: Infineon Technologies
Description: TVS DIODE 5.5VWM 11VC PGWLL23
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TA)
Applications: General Purpose
Capacitance @ Frequency: 0.12pF @ 2.5GHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: PG-WLL-2-3
Bidirectional Channels: 1
Voltage - Clamping (Max) @ Ipp: 11V (Typ)
Power - Peak Pulse: 22W
Power Line Protection: No
Produkt ist nicht verfügbar
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ESD111B1W0201E6327XTSA1 Infineon-ESD111-B1-W0201-DataSheet-v01_00-EN.pdf?fileId=5546d46278d64ffd01790db1840a47f3
ESD111B1W0201E6327XTSA1
Hersteller: Infineon Technologies
Description: TVS DIODE 5.5VWM 11VC PGWLL23
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TA)
Applications: General Purpose
Capacitance @ Frequency: 0.12pF @ 2.5GHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: PG-WLL-2-3
Bidirectional Channels: 1
Voltage - Clamping (Max) @ Ipp: 11V (Typ)
Power - Peak Pulse: 22W
Power Line Protection: No
auf Bestellung 14900 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
59+0.3 EUR
88+0.2 EUR
187+0.094 EUR
500+0.088 EUR
1000+0.079 EUR
2000+0.077 EUR
5000+0.074 EUR
Mindestbestellmenge: 59
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ESD113B102ELE6327XTMA1 Infineon-ESD113-B1Series-DS-v01_02-EN.pdf?fileId=5546d4614815da88014864b5329e1de7
ESD113B102ELE6327XTMA1
Hersteller: Infineon Technologies
Description: TVS DIODE 3.6VWM 8V PGTSLP220
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: HDMI
Capacitance @ Frequency: 0.2pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.6V (Max)
Supplier Device Package: PG-TSLP-2-20
Bidirectional Channels: 1
Voltage - Breakdown (Min): 4V
Voltage - Clamping (Max) @ Ipp: 8V
Power - Peak Pulse: 36W
Power Line Protection: No
Produkt ist nicht verfügbar
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PVT322APBF IRSD-S-A0001022139-1.pdf?t.download=true&u=5oefqw
PVT322APBF
Hersteller: Infineon Technologies
Description: SSR RELAY SPST-NO 170MA 0-250V
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Through Hole
Voltage - Input: 1.2VDC
Circuit: SPST-NO (1 Form A) x 2
Operating Temperature: -40°C ~ 85°C
Termination Style: PC Pin
Load Current: 170 mA
Approval Agency: UL
Supplier Device Package: 8-DIP
Voltage - Load: 0 V ~ 250 V
On-State Resistance (Max): 8 Ohms
Produkt ist nicht verfügbar
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IQDH45N04LM6ATMA1 Infineon-IQDH45N04LM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8a44f57b018a45a2d3240298
IQDH45N04LM6ATMA1
Hersteller: Infineon Technologies
Description: TRENCH <= 40V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Ta), 637A (Tc)
Rds On (Max) @ Id, Vgs: 0.45mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 333W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 1.449mA
Supplier Device Package: PG-TSON-8-9
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 172 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 20 V
Produkt ist nicht verfügbar
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IQDH45N04LM6ATMA1 Infineon-IQDH45N04LM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8a44f57b018a45a2d3240298
IQDH45N04LM6ATMA1
Hersteller: Infineon Technologies
Description: TRENCH <= 40V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Ta), 637A (Tc)
Rds On (Max) @ Id, Vgs: 0.45mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 333W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 1.449mA
Supplier Device Package: PG-TSON-8-9
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 172 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 20 V
auf Bestellung 4610 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.21 EUR
10+4.37 EUR
100+3.14 EUR
500+2.9 EUR
Mindestbestellmenge: 3
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PEF2235NV4.1-IPAT
Hersteller: Infineon Technologies
Description: ISDN PRIMARY ACCESS TRANSCEICER
Packaging: Bulk
auf Bestellung 2390 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
19+27.02 EUR
Mindestbestellmenge: 19
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PEF2235NV4.1
Hersteller: Infineon Technologies
Description: ISDN PRIMARY ACCESS TRANSCEICER
Packaging: Bulk
auf Bestellung 170 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
19+27.02 EUR
Mindestbestellmenge: 19
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PEF22553HTV2.1
Hersteller: Infineon Technologies
Description: LANTIQ PEF22553 TELECOMS IC
Packaging: Bulk
auf Bestellung 660 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+67.84 EUR
Mindestbestellmenge: 8
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